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Sample records for induced metal-insulator transition

  1. Metal-insulator-transition in SrTiO3 induced by argon bombardment combined with field effect

    SciTech Connect

    Xu, Jie; Zhu, Zhengyong; Zhao, Hengliang; Luo, Zhijiong

    2014-12-15

    By fabricating the Field-Effect-Transistors on argon bombardment SrTiO3 substrates, not only we have achieved one of the best mobility for Field-Effect-Transistors fabricated on SrTiO3, but also realized strong field induced Metal-Insulator-Transition. The critical sheet resistance for the Metal-Insulator-Transition is only 1/7 of the value obtained in the former experiments, indicating a different mechanism. Further study shows that the Metal-Insulator-Transition can be attributed to the oxygen vacancies formed after the bombardment becoming the electron donor under the electric field modulation, increasing SrTiO3 surface electron density and transforming the substrate into metallic state.

  2. Local Peltier-effect-induced reversible metal-insulator transition in VO2 nanowires

    NASA Astrophysics Data System (ADS)

    Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu

    2016-06-01

    We report anomalous resistance leaps and drops in VO2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal-insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

  3. Oxygen vacancy induced metal-insulator transition in LaNiO3

    NASA Astrophysics Data System (ADS)

    Misra, Debolina; Kundu, Tarun Kumar

    2016-01-01

    First principle calculations were carried out to examine the metal-insulator transition in LaNiO3 due to changes in oxygen content and consequent alteration of valence state of nickel. The optical properties of all the oxygen deficient LaNiO3-x compounds were calculated to illustrate the electronic structures of the compounds and the change they undergo during the metal-insulator transition. The metallic nature of LaNiO3 is characterized by the Drude peak in the optical conductivity spectra and the high reflectivity it exhibits in the low frequency region. The complex dielectric function and the optical conductivity spectra clearly show that, for x = 0.25, i.e., LaNiO2.75 becomes a semiconductor. As x increases further to 0.5, a gap in the optical spectra appears, indicating the insulating nature of LaNiO2.5. The insulating state of LaNiO2.5 is best described by the GW+HSE method which gives a good estimation of the optical gap of the material. The absorption spectra of LaNiO2.5 clearly reveal that this material is transparent in the low frequency region. This metal-insulator transition is followed by another insulator to semiconductor transition, as x is increased further to 1 i.e., in case of LaNiO2. The metal-insulator transition is then explained on the basis of electron localization function calculations, which show the increase in the covalent bonding in the system as the transition to the insulating state sets in.

  4. Approximating metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Danieli, Carlo; Rayanov, Kristian; Pavlov, Boris; Martin, Gaven; Flach, Sergej

    2015-12-01

    We consider quantum wave propagation in one-dimensional quasiperiodic lattices. We propose an iterative construction of quasiperiodic potentials from sequences of potentials with increasing spatial period. At each finite iteration step, the eigenstates reflect the properties of the limiting quasiperiodic potential properties up to a controlled maximum system size. We then observe approximate Metal-Insulator Transitions (MIT) at the finite iteration steps. We also report evidence on mobility edges, which are at variance to the celebrated Aubry-André model. The dynamics near the MIT shows a critical slowing down of the ballistic group velocity in the metallic phase, similar to the divergence of the localization length in the insulating phase.

  5. Metal-insulator transition induced in CaVO{sub 3} thin films

    SciTech Connect

    Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

    2013-04-07

    Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

  6. Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics.

    PubMed

    Wang, Le; Dash, Sibashisa; Chang, Lei; You, Lu; Feng, Yaqing; He, Xu; Jin, Kui-juan; Zhou, Yang; Ong, Hock Guan; Ren, Peng; Wang, Shiwei; Chen, Lang; Wang, Junling

    2016-04-20

    Oxygen vacancy is intrinsically coupled with magnetic, electronic, and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by postannealing at temperature lower than 300 °C and realize the reversible metal-insulator transition in epitaxial NdNiO₃ films. Importantly, over 6 orders of magnitude in the resistance modulation and a large change in optical bandgap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelate films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large magnetization of ∼50 emu/cm³ due to the formation of strongly correlated Ni²⁺ t(2g)⁶e(g)² states. The bandgap opening is an order of magnitude larger than that of the thermally driven metal-insulator transition and continuously tunable. Potential application of the newly found insulating phase in photovoltaics has been demonstrated in the nickelate-based heterojunctions. Our discovery opens up new possibilities for strongly correlated perovskite nickelates.

  7. Composition induced metal-insulator quantum phase transition in the Heusler type Fe2VAl

    NASA Astrophysics Data System (ADS)

    Naka, Takashi; Nikitin, Artem M.; Pan, Yu; de Visser, Anne; Nakane, Takayuki; Ishikawa, Fumihiro; Yamada, Yuh; Imai, Motoharu; Matsushita, Akiyuki

    2016-07-01

    We report the magnetism and transport properties of the Heusler compound Fe2+x V1-x Al at  -0.10  ⩽  x  ⩽  0.20 under pressure and a magnetic field. A metal-insulator quantum phase transition occurred at x  ≈  -0.05. Application of pressure or a magnetic field facilitated the emergence of finite zero-temperature conductivity σ 0 around the critical point, which scaled approximately according to the power law (P  -  P c ) γ . At x  ⩽  -0.05, a localized paramagnetic spin appeared, whereas above the ferromagnetic quantum critical point at x  ≈  0.05, itinerant ferromagnetism was established. At the quantum critical points at x  =  -0.05 and 0.05, the resistivity and specific heat exhibited singularities characteristic of a Griffiths phase appearing as an inhomogeneous electronic state.

  8. Composition induced metal-insulator quantum phase transition in the Heusler type Fe2VAl.

    PubMed

    Naka, Takashi; Nikitin, Artem M; Pan, Yu; de Visser, Anne; Nakane, Takayuki; Ishikawa, Fumihiro; Yamada, Yuh; Imai, Motoharu; Matsushita, Akiyuki

    2016-07-20

    We report the magnetism and transport properties of the Heusler compound Fe2+x V1-x Al at  -0.10  ⩽  x  ⩽  0.20 under pressure and a magnetic field. A metal-insulator quantum phase transition occurred at x  ≈  -0.05. Application of pressure or a magnetic field facilitated the emergence of finite zero-temperature conductivity σ 0 around the critical point, which scaled approximately according to the power law (P  -  P c ) (γ) . At x  ⩽  -0.05, a localized paramagnetic spin appeared, whereas above the ferromagnetic quantum critical point at x  ≈  0.05, itinerant ferromagnetism was established. At the quantum critical points at x  =  -0.05 and 0.05, the resistivity and specific heat exhibited singularities characteristic of a Griffiths phase appearing as an inhomogeneous electronic state.

  9. Carbon kagome lattice and orbital-frustration-induced metal-insulator transition for optoelectronics.

    PubMed

    Chen, Yuanping; Sun, Y Y; Wang, H; West, D; Xie, Yuee; Zhong, J; Meunier, V; Cohen, Marvin L; Zhang, S B

    2014-08-22

    A three-dimensional elemental carbon kagome lattice, made of only fourfold-coordinated carbon atoms, is proposed based on first-principles calculations. Despite the existence of 60° bond angles in the triangle rings, widely perceived to be energetically unfavorable, the carbon kagome lattice is found to display exceptional stability comparable to that of C(60). The system allows us to study the effects of triangular frustration on the electronic properties of realistic solids, and it demonstrates a metal-insulator transition from that of graphene to a direct gap semiconductor in the visible blue region. By minimizing s-p orbital hybridization, which is an intrinsic property of carbon, not only the band edge states become nearly purely frustrated p states, but also the band structure is qualitatively different from any known bulk elemental semiconductors. For example, the optical properties are similar to those of direct-gap semiconductors GaN and ZnO, whereas the effective masses are comparable to or smaller than those of Si.

  10. Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO2 crystal film

    NASA Astrophysics Data System (ADS)

    Liao, G. M.; Chen, S.; Fan, L. L.; Chen, Y. L.; Wang, X. Q.; Ren, H.; Zhang, Z. M.; Zou, C. W.

    2016-04-01

    Insulator to metal phase transitions driven by external electric field are one of the hottest topics in correlated oxide study. While this electric triggered phenomena always mixes the electric field switching effect and joule thermal effect together, which are difficult to clarify the intrinsic mechanism. In this paper, we investigate the dynamical process of voltage-triggered metal-insulator transition (MIT) in a VO2 crystal film and observe the temperature dependence of the threshold voltages and switching delay times, which can be explained quite well based on a straightforward joule thermal model. By conducting the voltage controlled infrared transmittance measurement, the delayed infrared transmission change is also observed, further confirming the homogeneous switching process for a large-size film. All of these results show strong evidences that joule thermal effect plays a dominated role in electric-field-induced switching of VO2 crystal.

  11. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    PubMed

    Li, Dasheng; Sharma, Abhishek A; Gala, Darshil K; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G; Bain, James A; Skowronski, Marek

    2016-05-25

    DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model. PMID:27136956

  12. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    PubMed

    Li, Dasheng; Sharma, Abhishek A; Gala, Darshil K; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G; Bain, James A; Skowronski, Marek

    2016-05-25

    DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model.

  13. Metal-insulator transition in SrTiO(3-x) thin films induced by frozen-out carriers.

    PubMed

    Liu, Z Q; Leusink, D P; Wang, X; Lü, W M; Gopinadhan, K; Annadi, A; Zhao, Y L; Huang, X H; Zeng, S W; Huang, Z; Srivastava, A; Dhar, S; Venkatesan, T; Ariando

    2011-09-30

    We report optical, electrical and magnetotransport properties of oxygen deficient SrTiO(3) (SrTiO(3-x)) thin films fabricated by pulsed laser deposition technique. The oxygen vacancies (O(vac)) in the thin film are expected to be uniform. By comparing its electrical properties to those of bulk SrTiO(3-x), it was found that O(vac) in bulk SrTiO(3-x) is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the SrTiO(3-x) film was found to be induced by the carrier freeze-out effect. The low temperature frozen state can be reexcited by Joule heating, electric and intriguingly magnetic field. PMID:22112172

  14. Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

    NASA Astrophysics Data System (ADS)

    Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

    2007-03-01

    We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

  15. Plasmonic effects on the laser-induced metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; MacQuarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconducting to metallic phase transition that can be induced thermally, optically, or electrically. When switched to the high-temperature (T > 68°C) metallic phase, the greatest contrast in the optical properties occurs at wavelengths in the near-to-mid-infrared and beyond. In the visible to near-infrared, however, upon switching for wavelengths between ~500-1000 nm, VO2 transmits more light in the metallic phase. In this paper, we report studies of the effect of near-IR irradiation (785 nm) on lithographically prepared arrays of gold nanoparticles (NPs) covered with a thin film of VO2 and find that the presence of the NPs substantially lowers the laser threshold for low-power induction of the phase transition. Hybrid Au::VO2 structures were created by coating lithographically prepared arrays of gold nanoparticles (NPs) (diameters 140 and 200 nm, array spacing 450 nm) with 60 nm thick films of VO2 by pulsed laser deposition. Due to resonant absorption of the Au particle-plasmon resonance (PPR) at 785 nm, a temperature-dependent shift in the PPR can be generated by switching the VO2 from one phase to another. We have measured the switching behavior of VO2 and Au::VO2 structures using shuttered CW laser irradiation in order to study both optical and thermal mechanisms of the phase transition. Transient absorption measurements using a shuttered 785 nm pump laser corresponding to the PPR resonance of the Au NPs and 1550 nm CW probe show that the presence of the Au NPs lowers the threshold laser power required to induce the phase transition.

  16. Optically induced metal-insulator transition in gold::vanadium dioxide hybrid structures

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Kaye, Anthony; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semi-conducting to metallic phase transition that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameters up to 200 nm with 60 nm thick films of VO2 via pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a chopped 780 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Additionally, pump-probe measurements were conducted on the structures using a Ti:sapphire oscillator with 100-fs pulses. Results show that the presence of Au NPs lowers the threshold laser power required to induce the phase transition. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  17. Electric field induced metal-insulator transition and colossal magnetoresistance in CdCr2S4

    NASA Astrophysics Data System (ADS)

    Sun, C. P.; Lin, C. C.; Her, J. L.; Taran, S.; Chou, C. C.; Chan, C. L.; Huang, C. L.; Berger, H.; Yang, H. D.

    2008-03-01

    Multiferroic ordering existing in a single material is a recent hot topic in the field of condensed matter physics due to its potential application in device control. The chromium chalcogenide spinel CdCr2S4 is one of the attractive materials investigated by Hemberger et al. recently.[1] Based on the electrical measurement, there is no discontinuity through the ferromagnetic ordering at TC ˜ 85K.[2] We measure the temperature dependent resistance under various electric fields to investigate the electrical properties of the present material. To our knowledge, we first observe the electric field induced metal-insulator transition in this material around TC. Moreover, a colossal magnetoresistance (CMR), which is comparable to that of manganese-based CMR material, is also observed near TC. The origin for these properties is discussed. [1] J. Hemberger, P. Lunkenheimer, R. Fichtl, H.-A. Krug von Nidda, V. Tsurkan, A. Loidl, Nature 434, 364 (2006). [2] P. K. Baltzer, H. W. Lehmann, and M. Robbins, Phys. Rev. Lett. 15, 493 (1965).

  18. Studies related to the magnetic-field-induced metal-insulator transition in n-type InSb

    NASA Astrophysics Data System (ADS)

    Abdul-Gader, Mousa Mohammad

    Measurements of the longitudinal and transverse resistivities of several n-type InSb samples with carrier densities in the range 2 to 7 x 10 cm-3 have been made as a function (a) of temperature ([greater or equal to] 0.04K) at constant magnetic field and (b) of magnetic field ( [less or equal to] 70KG) at constant temperature. A metal-insulator (MI) transition has been found to occur in the sample under study at a certain magnetic field Hc, dependent on the carrier concentration n. On the metallic side of this magnetically induced has been used to interpret the magnetic-field variation of the observed conductivity at very low temperatures. Good agreement is obtained in the vicinity of the transition with the critical exponent v ranging between 0.8 and nearly metallic region of the transition the temperature dependence of the conductivity obeys the relation ?(T) = qq+ mT + BT for T [lesser or equal to]1.5K. When the magnetic field is reduced sufficiently so that the sample becomes like a metal but still remaining in the extreme quantum limit, the resistivity becomes independent of temperature and agrees with the magnetoresistance theory of Roth and Argyres (1966) with the screening radius given by Wallace (1974a and b). In the insulator region of the transition, the low-temperature dependence of the resistivity is represented by [rho] = [rho]0exp (T0/T)x predicted for variable range hopping ° conduction, but no common value of x has been observed and it was in the range 1/4 to 1/2. For any temperature dependence in this regime, To is found to increase with increasing magnetic field and the discrepancy between the experimental and theoretical values of To is attributed to correlation effects.

  19. Magnetic-field-induced superconductor-metal-insulator transitions in bismuth metal graphite

    NASA Astrophysics Data System (ADS)

    Suzuki, Masatsugu; Suzuki, Itsuko S.; Lee, Robert; Walter, Jürgen

    2002-07-01

    Bismuth metal graphite (MG) has a unique layered structure where Bi nanoparticles are encapsulated between adjacent sheets of nanographites. The superconductivity below Tc (=2.48 K) is due to Bi nanoparticles. The Curie-like susceptibility below 30 K is due to conduction electrons localized near zigzag edges of nanographites. A magnetic-field-induced transition from metallic to semiconductorlike phase is observed in the in-plane resistivity ρa around Hc (~25 kOe) for both H⊥c and H||c (c: c axis). A negative magnetoresistance in ρa for H⊥c (040 kOe) suggest the occurrence of a two-dimensional weak-localization effect.

  20. Low-power laser induced metal-insulator transition in gold::vanadium dioxide nanoarrays

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F.

    2010-10-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconductor-to-metal transition (SMT) that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameter 140 nm with a 60 nm thick film of VO2 by pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a mechanically shuttered 785 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Results show that the presence of Au NPs significantly lowers the threshold laser power required to induce the SMT. Measurements on arrays of different grating constants (350 nm and 500 nm) support the hypothesis that the particles are acting as ``nano-radiators'' that absorb and redeposit thermal energy by scattering light back into the film. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  1. Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite

    NASA Astrophysics Data System (ADS)

    Suzuki, Masatsugu; Suzuki, Itsuko S.; Lee, Robert; Walter, Jürgen

    2002-03-01

    Bismuth-metal graphite (MG) has a unique layered structure where Bi nanoparticles are encapsulated in nanographites. The size of nanographite is on the same order as that of Bi nanographite. The observed superconductivity below Tc (= 2.48 K) and the Curie-like Pauli paramagnetic susceptibility below 30 K are related to the high density of states at the Fermi energy arising from edge states of nanographites.^1 A magnetic-field induced transition from metallic to semiconductor-like phase is observed in the in-plane resistivity ρa around Hc (≈ 25 kOe) for both H⊥c and H‖c (c: c axis). The suppression of the metallic phase by H is independent of the directions of H (H‖c and H⊥c) for Bi-MG, suggesting that the spin related effect is significant compared to the orbital effect. The Zeemann energy gSμ_BH at 25 kOe corresponds to a thermal energy k_BTH with TH = 1.7 K, where g = 2 and S = 1/2. The temperature TH is slightly lower than T_c. A negative magnetoresistance in ρa for H⊥c (040 kOe) suggest the occurrence of two-dimensional weak localization effect. ^1K. Wakabayashi, M. Fujita, H. Ajiki, and M. Sigrist, Phys. Rev. 59, 8271 (1999).

  2. On metal-insulator transition in cubic fullerides

    NASA Astrophysics Data System (ADS)

    Iwahara, Naoya; Chibotaru, Liviu

    The interplay between degenerate orbital and electron correlation is a key to characterize the electronic phases in, for example, transition metal compounds and alkali-doped fullerides. Besides, the degenerate orbital couples to spin and lattice degrees of freedom ,giving rise to exotic phenomena. Here, we develop the self-consistent Gutzwiller approach for the simultaneous treatment of the Jahn-Teller effect and electron correlation, and apply the methodology to reveal the nature of the ground electronic state of fullerides. For small Coulomb repulsion on site U, the fulleride is quasi degenerate correlated metal. With increase of U, we found the quantum phase transition from the metallic phase to JT split phase. In the latter, the Mott transition (MT) mainly develops in the half-filled subband, whereas the empty and the completely filled subbands are almost uninvolved. Therefore, we can qualify the metal-insulator transition in fullerides as an orbital selective MT induced by JT effect.

  3. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement.

    PubMed

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Tok, Eng Soon; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system.

  4. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    PubMed Central

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  5. Thermodynamic behavior near a metal-insulator transition

    NASA Technical Reports Server (NTRS)

    Paalanen, M. A.; Graebner, J. E.; Bhatt, R. N.; Sachdev, S.

    1988-01-01

    Measurements of the low-temperature specific heat of phosphorus-doped silicon for densities near the metal-insulator transition show an enhancement over the conduction-band itinerant-electron value. The enhancement increases toward lower temperatures but is less than that found for the spin susceptibility. The data are compared with various theoretical models; the large ratio of the spin susceptibility to specific heat indicates the presence of localized spin excitations in the metallic phase as the metal-insulator transition is approached.

  6. Suppression of metal-insulator transition in VO2 by electric field-induced oxygen vacancy formation.

    PubMed

    Jeong, Jaewoo; Aetukuri, Nagaphani; Graf, Tanja; Schladt, Thomas D; Samant, Mahesh G; Parkin, Stuart S P

    2013-03-22

    Electrolyte gating with ionic liquids is a powerful tool for inducing novel conducting phases in correlated insulators. An archetypal correlated material is vanadium dioxide (VO(2)), which is insulating only at temperatures below a characteristic phase transition temperature. We show that electrolyte gating of epitaxial thin films of VO(2) suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 kelvin, even after the ionic liquid is completely removed. We found that electrolyte gating of VO(2) leads not to electrostatically induced carriers but instead to the electric field-induced creation of oxygen vacancies, with consequent migration of oxygen from the oxide film into the ionic liquid. This mechanism should be taken into account in the interpretation of ionic liquid gating experiments.

  7. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  8. Quasiparticle transformation during a metal-insulator transition in graphene.

    PubMed

    Bostwick, Aaron; McChesney, Jessica L; Emtsev, Konstantin V; Seyller, Thomas; Horn, Karsten; Kevan, Stephen D; Rotenberg, Eli

    2009-07-31

    Here we show, with simultaneous transport and photoemission measurements, that the graphene-terminated SiC(0001) surface undergoes a metal-insulator transition upon dosing with small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi-liquid behavior and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state. PMID:19792520

  9. Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions.

    PubMed

    Shekhawat, Ashivni; Papanikolaou, Stefanos; Zapperi, Stefano; Sethna, James P

    2011-12-30

    Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones.

  10. Metal-Insulator Transition of Dirac Fermions: Variational Cluster Study

    NASA Astrophysics Data System (ADS)

    Ebato, Masaki; Kaneko, Tatsuya; Ohta, Yukinori

    2015-04-01

    A comparative study is made on the metal-insulator transition of Dirac fermions in the honeycomb and π-flux Hubbard models at half filling by means of the variational cluster approximation and cluster dynamical impurity approximation. Paying particular attention to the choice of the geometry of solver clusters and the inclusion of particle-bath sites, we show that the direct transition from the Dirac semimetallic state to the antiferromagnetic Mott insulator state occurs in these models, and therefore, the spin liquid phase is absent in the intermediate region, in agreement with recent quantum-Monte-Carlo-based calculations.

  11. Metal-insulator and charge ordering transitions in oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Singh, Sujay Kumar

    Strongly correlated oxides are a class of materials wherein interplay of various degrees of freedom results in novel electronic and magnetic phenomena. Vanadium oxides are widely studied correlated materials that exhibit metal-insulator transitions (MIT) in a wide temperature range from 70 K to 380 K. In this Thesis, results from electrical transport measurements on vanadium dioxide (VO2) and vanadium oxide bronze (MxV 2O5) (where M: alkali, alkaline earth, and transition metal cations) are presented and discussed. Although the MIT in VO2 has been studied for more than 50 years, the microscopic origin of the transition is still debated since a slew of external parameters such as light, voltage, and strain are found to significantly alter the transition. Furthermore, recent works on electrically driven switching in VO2 have shown that the role of Joule heating to be a major cause as opposed to electric field. We explore the mechanisms behind the electrically driven switching in single crystalline nanobeams of VO2 through DC and AC transport measurements. The harmonic analysis of the AC measurement data shows that non-uniform Joule heating causes electronic inhomogeneities to develop within the nanobeam and is responsible for driving the transition in VO2. Surprisingly, field assisted emission mechanisms such as Poole-Frenkel effect is found to be absent and the role of percolation is also identified in the electrically driven transition. This Thesis also provides a new insight into the mechanisms behind the electrolyte gating induced resistance modulation and the suppression of MIT in VO2. We show that the metallic phase of VO2 induced by electrolyte gating is due to an electrochemical process and can be both reversible and irreversible under different conditions. The kinetics of the redox processes increase with temperature; a complete suppression of the transition and the stabilization of the metallic phase are achievable by gating in the rutile metallic phase

  12. Electrocaloric effect of metal-insulator transition in VO{sub 2}

    SciTech Connect

    Matsunami, Daichi; Fujita, Asaya

    2015-01-26

    The electrocaloric effect was observed in association with an electric-field induced metal-insulator transition in VO{sub 2} using a calorimetric measurement under an applied voltage. For a VO{sub 2} plate with a 0.4 mm thickness located in the center of a capacitor-like structure, the metal-insulator transition was manipulated by applying a few volts. The occurrence of a transition in such a thick sample with relatively low voltage indicates that a surface charge accumulation mechanism is effective. The isothermal entropy change reached 94 J kg{sup −1} K{sup −1}, while the adiabatic temperature change was calculated as −3.8 K under a voltage change of 0–3 V. The large entropy change is attributed to correlation of the complex freedom among spin, charge, and lattice.

  13. Quantum critical transport at a continuous metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Haldar, P.; Laad, M. S.; Hassan, S. R.

    2016-08-01

    In contrast to the first-order correlation-driven Mott metal-insulator transition, continuous disorder-driven transitions are intrinsically quantum critical. Here, we investigate transport quantum criticality in the Falicov-Kimball model, a representative of the latter class in the strong disorder category. Employing cluster-dynamical mean-field theory, we find clear and anomalous quantum critical scaling behavior manifesting as perfect mirror symmetry of scaling curves on both sides of the MIT. Surprisingly, we find that the beta function β (g ) scales as log(g ) deep into the bad-metallic phase as well, providing a sound unified basis for these findings. We argue that such strong localization quantum criticality may manifest in real three-dimensional systems where disorder effects are more important than electron-electron interactions.

  14. Chiral phase transition in lattice QCD as a metal-insulator transition

    SciTech Connect

    Garcia-Garcia, Antonio M.; Osborn, James C.

    2007-02-01

    We investigate the lattice QCD Dirac operator with staggered fermions at temperatures around the chiral phase transition. We present evidence of a metal-insulator transition in the low lying modes of the Dirac operator around the same temperature as the chiral phase transition. This strongly suggests the phenomenon of Anderson localization drives the QCD vacuum to the chirally symmetric phase in a way similar to a metal-insulator transition in a disordered conductor. We also discuss how Anderson localization affects the usual phenomenological treatment of phase transitions a la Ginzburg-Landau.

  15. Metal insulator transitions in perovskite SrIrO{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Jeong, Yoon Hee; Kim, Ki-Seok

    2014-12-07

    Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing fundamental question would be how these two mechanisms contrive to accomplish emergent anomalous behaviors. Here, we have grown high quality perovskite SrIrO{sub 3} thin films, containing a strong spin orbit coupled 5d element Ir, on various substrates such as GdScO{sub 3} (110), DyScO{sub 3} (110), SrTiO{sub 3} (001), and NdGaO{sub 3} (110) with increasing lattice mismatch, in order to carry out a systematic study on the transport properties. We found that metal insulator transitions can be induced in this system; by either reducing thickness (on best lattice matched substrate) or changing degree of lattice strain (by lattice mismatch between film and substrates) of films. Surprisingly these two pathways seek two distinct types of metal insulator transitions; the former falls into disorder driven Anderson type whereas the latter turns out to be of unconventional Mott-Anderson type with the interplay of disorder and correlation. More interestingly, in the metallic phases of SrIrO{sub 3}, unusual non-Fermi liquid characteristics emerge in resistivity as Δρ ∝ T{sup ε} with ε evolving from 4/5 to 1 to 3/2 with increasing lattice strain. We discuss theoretical implications of these phenomena to shed light on the metal insulator transitions.

  16. Metal-insulator transitions due to self-doping

    SciTech Connect

    Blawid, S.; Tuan, H.A.; Yanagisawa, T.; Fulde, P.

    1996-09-01

    We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per site. Depending on the position of the additional band, both a metal-to-insulator and an insulator-to-metal transition occur with increasing hybridization. The latter transition from a Mott insulator into a metal via {open_quote}{open_quote}self-doping{close_quote}{close_quote} was recently proposed to explain the low carrier concentration in Yb{sub 4}As{sub 3}. We suggest a restrictive parameter regime for this transition, making use of exact results in various limits. The predicted absence of the self-doping transition for nested Fermi surfaces is confirmed by means of an unrestricted Hartree-Fock approximation and an exact diagonalization study in one dimension. In the general case metal-insulator phase diagrams are obtained within the slave-boson mean-field and the alloy-analog approximations. {copyright} {ital 1996 The American Physical Society.}

  17. Exponential Orthogonality Catastrophe at the Anderson Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Kettemann, S.

    2016-09-01

    We consider the orthogonality catastrophe at the Anderson metal-insulator transition (AMIT). The typical overlap F between the ground state of a Fermi liquid and the one of the same system with an added potential impurity is found to decay at the AMIT exponentially with system size L as F ˜exp (-c Lη) , where η is the power of multifractal intensity correlations. Thus, strong disorder typically increases the sensitivity of a system to an added impurity exponentially. We recover, on the metallic side of the transition, Anderson's result that the fidelity F decays with a power law F ˜L-q (EF) with system size L . Its power increases as the Fermi energy EF approaches the mobility edge EM as q (EF)˜[(EF-EM )/EM]-ν η , where ν is the critical exponent of the correlation length ξc. On the insulating side of the transition, F is constant for system sizes exceeding the localization length ξ . While these results are obtained for the typical fidelity F , we find that log F is widely, log normally, distributed with a width diverging at the AMIT. As a consequence, the mean value of the fidelity F converges to one at the AMIT, in strong contrast to its typical value which converges to zero exponentially fast with system size L . This counterintuitive behavior is explained as a manifestation of multifractality at the AMIT.

  18. Quantum capacitance in thin film vanadium dioxide metal insulator transition

    NASA Astrophysics Data System (ADS)

    Wu, Zhe; Knighton, Talbot; Tarquini, Vinicio; Torres, David; Wang, Tongyu; Sepulveda, Nelson; Huang, Jian

    We present capacitance measurements of the electronic density of states performed in high quality vanadium dioxide (VO2) thin films on sapphire (Al2O3) substrate. These films show the expected metal insulator transition near 60 °C with resistivity changing by 3 orders of magnitude with a hysteresis of 10 °C. To make a capacitive probe, a gate is suspended above the film surface using a flip-chip method with microfabricated supports. The geometric capacitance per-area reached is 40 pF/mm2. Such a large capacitance can be significantly modified by electron interaction and band charging/discharging which appear as an extra term known as the quantum capacitance (Cq). An AC signal applied to the gate allows measurement of the changing density of states (DOS) across the MIT. The DOS abruptly increases as the sample is heated through the transition point. Conversely the low temperature drop of d μ / d n is consistent with an energy gap opening in the insulating phase. These parameters shed light on the transition mechanism. NSF DMR-1105183, NSF ECCS 1306311.

  19. Metal-insulator transition in low dimensional La{sub 0.75}Sr{sub 0.25}VO{sub 3} thin films

    SciTech Connect

    Dao, Tran M.; Mondal, Partha S.; Takamura, Y.; Arenholz, E.; Lee, Jaichan

    2011-06-15

    We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La{sub 0.75}Sr{sub 0.25}VO{sub 3} films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electronelectron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

  20. Anderson metal-insulator transitions with classical magnetic impurities

    SciTech Connect

    Jung, Daniel; Kettemann, Stefan

    2014-08-20

    We study the effects of classical magnetic impurities on the Anderson metal-insulator transition (AMIT) numerically. In particular we find that while a finite concentration of Ising impurities lowers the critical value of the site-diagonal disorder amplitude W{sub c}, in the presence of Heisenberg impurities, W{sub c} is first increased with increasing exchange coupling strength J due to time-reversal symmetry breaking. The resulting scaling with J is compared to analytical predictions by Wegner [1]. The results are obtained numerically, based on a finite-size scaling procedure for the typical density of states [2], which is the geometric average of the local density of states. The latter can efficiently be calculated using the kernel polynomial method [3]. Although still suffering from methodical shortcomings, our method proves to deliver results close to established results for the orthogonal symmetry class [4]. We extend previous approaches [5] by combining the KPM with a finite-size scaling analysis. We also discuss the relevance of our findings for systems like phosphor-doped silicon (Si:P), which are known to exhibit a quantum phase transition from metal to insulator driven by the interplay of both interaction and disorder, accompanied by the presence of a finite concentration of magnetic moments [6].

  1. Metal-insulator transitions in IZO, IGZO, and ITZO films

    NASA Astrophysics Data System (ADS)

    Makise, Kazumasa; Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju; Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki

    2014-10-01

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe-Regel criterion. We found that the MIT occurs in a narrow range between k F ℓ = 0.13 and k F ℓ = 0.25, where k F and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ ( T ) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros-Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(TMott/T)1/4 or exp(TMott/T)1/3 for Mott hopping conduction to exp(TES/T)1/2 for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between TMott and TES satisfies TES ∝ TMott2/3.

  2. Metal-insulator transitions in IZO, IGZO, and ITZO films

    SciTech Connect

    Makise, Kazumasa; Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju; Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki

    2014-10-21

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

  3. DC current induced metal-insulator transition in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3}/LaAlO{sub 3} thin film

    SciTech Connect

    Huang, Haoliang; Luo, Zhenlin Yang, Yuanjun; Yang, Mengmeng; Wang, Haibo; Hu, Sixia; Bao, Jun; Yun, Yu; Meng, Dechao; Lu, Yalin; Gao, Chen

    2014-05-15

    The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3} (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO{sub 3} substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The T{sub MI} of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 10{sup 9} A•m{sup −2} to 4.9 × 10{sup 9} A•m{sup −2}. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.

  4. Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures.

    PubMed

    Chen, Xiaolong; Wu, Zefei; Xu, Shuigang; Wang, Lin; Huang, Rui; Han, Yu; Ye, Weiguang; Xiong, Wei; Han, Tianyi; Long, Gen; Wang, Yang; He, Yuheng; Cai, Yuan; Sheng, Ping; Wang, Ning

    2015-01-01

    The metal-insulator transition is one of the remarkable electrical properties of atomically thin molybdenum disulphide. Although the theory of electron-electron interactions has been used in modelling the metal-insulator transition in molybdenum disulphide, the underlying mechanism and detailed transition process still remain largely unexplored. Here we demonstrate that the vertical metal-insulator-semiconductor heterostructures built from atomically thin molybdenum disulphide are ideal capacitor structures for probing the electron states. The vertical configuration offers the added advantage of eliminating the influence of large impedance at the band tails and allows the observation of fully excited electron states near the surface of molybdenum disulphide over a wide excitation frequency and temperature range. By combining capacitance and transport measurements, we have observed a percolation-type metal-insulator transition, driven by density inhomogeneities of electron states, in monolayer and multilayer molybdenum disulphide. In addition, the valence band of thin molybdenum disulphide layers and their intrinsic properties are accessed.

  5. Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott and band insulators

    NASA Astrophysics Data System (ADS)

    Omori, Yukiko; Rüegg, Andreas; Sigrist, Manfred

    2014-10-01

    Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott and a band insulator can also form in the absence of a polar discontinuity. The condition for the appearance of such a metallic state is consistent with the classical Mott criterion: the metallic state is stable if the screening length falls below the effective Bohr radius of a particle-hole pair. In this case, the metallic state bears a remarkable similarity to the one found in polar/nonpolar heterostructures. On the other hand, if the screening length approaches the size of the effective Bohr radius, particles and holes are bound to each other resulting in an overall insulating phase. We analyze this metal-insulator transition, which is tunable by the dielectric constant, in the framework of the slave-boson mean-field theory for a lattice model with both on-site and long-range Coulomb interactions. We discuss ground-state properties and transport coefficients, which we derive in the relaxation-time approximation. Interestingly, we find that the metal-insulator transition is accompanied by a strong enhancement of the Seebeck coefficient in the band-insulator region in the vicinity of the interface. The implications of our theoretical findings for various experimental systems such as nonpolar (110) interfaces are also discussed.

  6. Infrared study of the metal-insulator transition regime in vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Qazilbash, M. M.; Chae, B. G.; Kim, H. T.; Basov, D. N.

    2007-03-01

    Vanadium dioxide (VO2) undergoes a metal-insulator transition at Tc 340 K. The transition region of a VO2 film has been studied with infrared ellipsometry and near-normal incidence reflectance between 40 cm-1 and 5000 cm-1. The measured optical constants are compared to calculations based on effective medium theories. The anomalies in the frequency and temperature dependence of the optical constants will be presented. The implications of the data for the mechanism of the metal-insulator transition will be discussed.

  7. Separating electric field and thermal effects across the metal-insulator transition in vanadium oxide nanobeams

    NASA Astrophysics Data System (ADS)

    Stabile, Adam A.; Singh, Sujay K.; Wu, Tai-Lung; Whittaker, Luisa; Banerjee, Sarbajit; Sambandamurthy, G.

    2015-07-01

    We present results from an experimental study of the equilibrium and non-equilibrium transport properties of vanadium oxide nanobeams near the metal-insulator transition (MIT). Application of a large electric field in the insulating phase across the nanobeams produces an abrupt MIT, and the individual roles of thermal and non-thermal effects in driving the transition are studied. Transport measurements at temperatures (T) far below the critical temperature (Tc) of MIT, in nanoscale vanadium oxide devices, show that both T and electric field play distinctly separate, but critical roles in inducing the MIT. Specifically, at T ≪ T c , electric field dominates the MIT through an avalanche-type process, whereas thermal effects become progressively critical as T approaches Tc.

  8. Metal-insulator transition of fermions on a kagome lattice at 1/3 filling.

    PubMed

    Nishimoto, Satoshi; Nakamura, Masaaki; O'Brien, Aroon; Fulde, Peter

    2010-05-14

    We discuss the metal-insulator transition of the spinless fermion model on a kagome lattice at 1/3 filling. The system is analyzed by using exact diagonalization, density-matrix renormalization group methods, and random-phase approximation. In the strong-coupling region, the charge-ordered ground state is consistent with the predictions of an effective model, i.e., plaquette order. We find that the qualitative properties of the metal-insulator transition are totally different depending on the sign of the hopping matrix elements, reflecting the difference in the band structure near the Fermi level.

  9. Metal-insulator transitions of bulk and domain-wall states in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, Kentaro

    A family of pyrochlore iridates R2Ir2O7 offers an ideal platform to explore intriguing phases such as topological Mott insulator and Weyl semimetal. Here we report transport and spectroscopic studies on the metal-insulator transition (MIT) induced by the modulations of effective electron correlation and magnetic structures, which is finely tuned by external pressure, chemical substitutions (R = Nd1-x Prx and SmyNd1-y) , and magnetic field. A reentrant insulator-metal-insulator transition is observed near the paramagnetic insulator-metal phase boundary reminiscent of a first-order Mott transition for R = SmyNd1-y compounds (y~0.8). The metallic states on the magnetic domain walls (DWs), which are observed for R = Nd in real space as well as in transport properties, is simultaneously turned into the insulating one. These findings imply that the DW electronic state is intimately linked to the bulk states. For the mixed R = Nd1-x Prx compounds, the divergent behavior of resistivity with antiferromagnetic order is significantly suppressed by applying a magnetic field along [001] direction. It is attributed to the phase transition from the antiferromagnetic insulating state to the novel Weyl (semi-)metal state accompanied by the change of magnetic structure. The present study combined with experiment and theory suggests that there are abundant exotic phases with physical parameters such as electron correlation and Ir-5 d magnetic order pattern. Work performed in collaboration with J. Fujioka, B.-J. Yang, C. Terakura, N. Nagaosa, Y. Tokura (University of Tokyo, RIKEN CEMS), J. Shiogai, A. Tsukazaki, S. Nakamura, S. Awaji (Tohoku University). 1This work was supported by JSPS FIRST Program and Grant-in-Aid for Scientific Research (Grants No. 80609488 and No. 24224009).

  10. Universal Quantum Criticality in the Metal-Insulator Transition of Two-Dimensional Interacting Dirac Electrons

    NASA Astrophysics Data System (ADS)

    Otsuka, Yuichi; Yunoki, Seiji; Sorella, Sandro

    2016-01-01

    The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.

  11. Enhanced ferromagnetic and metal insulator transition in Sm0.55Sr0.45MnO3 thin films: Role of oxygen vacancy induced quenched disorder

    NASA Astrophysics Data System (ADS)

    Srivastava, M. K.; Siwach, P. K.; Kaur, A.; Singh, H. K.

    2010-11-01

    Effect of quenched disorder (QD) caused by oxygen vacancy (OV) and substrate induced inhomogeneous compressive strain, on the magnetic and transport properties of oriented polycrystalline Sm0.55Sr0.45MnO3 thin films is investigated. QD is related intimately to the ordering/disordering of the OVs and controls the paramagnetic-ferromagnetic/insulator-metal transition. OV ordered films show enhanced TC/TIM˜165 K, which is depressed by oxygen annealing. OV disordering realized by quenching reduces TC/TIM. The first order IM transition observed in SSMO single crystals is transformed into nonhysteretic and continuous one in the OV ordered films. QD appears to be diluted by OV disorder/annihilation and results in stronger carrier localization.

  12. Pure electronic metal-insulator transition at the interface of complex oxides.

    PubMed

    Meyers, D; Liu, Jian; Freeland, J W; Middey, S; Kareev, M; Kwon, Jihwan; Zuo, J M; Chuang, Yi-De; Kim, J W; Ryan, P J; Chakhalian, J

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  13. Pure electronic metal-insulator transition at the interface of complex oxides

    PubMed Central

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  14. Pure electronic metal-insulator transition at the interface of complex oxides

    NASA Astrophysics Data System (ADS)

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-06-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

  15. Quantum spin liquids and the metal-insulator transition in doped semiconductors.

    PubMed

    Potter, Andrew C; Barkeshli, Maissam; McGreevy, John; Senthil, T

    2012-08-17

    We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum spin liquid state with diffusive charge neutral "spinon" excitations. Such a quantum spin liquid state can appear as an intermediate phase between the metal and the Anderson-Mott insulator. An immediate testable consequence is the presence of metallic thermal conductivity at low temperature in the electrical insulator near the metal-insulator transition. Further, we show that though the transition is second order, the zero temperature residual electrical conductivity will jump as the transition is approached from the metallic side. However, the electrical conductivity will have a nonmonotonic temperature dependence that may complicate the extrapolation to zero temperature. Signatures in other experiments and some comparisons with existing data are made. PMID:23006401

  16. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-02-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system.

  17. Selective electrochemical reactivity of rutile VO2 towards the suppression of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Singh, Sujay; Abtew, Tesfaye A.; Horrocks, Gregory; Kilcoyne, Colin; Marley, Peter M.; Stabile, Adam A.; Banerjee, Sarbajit; Zhang, Peihong; Sambandamurthy, G.

    2016-03-01

    We demonstrate through electrolyte gating measurements of a single nanobeam that the rultile phase of VO2 is electrochemically more reactive than the monoclinic phase. Our results show that the complete suppression of the metal-insulator transition and stabilization of the metallic phase is possible when gate voltage is applied in the rutile metallic phase. The results are discussed based on the formation of oxygen vacancies wherein accommodation of a high concentration of vacancies in the rutile phase selectively stabilizes it by disrupting dimerization of adjacent V-V pairs required for a transition to the monoclinic phase. The creation of oxygen vacancies is proposed to proceed through the oxidation of the electrolyte. Raman spectroscopy data suggest surface metallization upon electrolyte gating with an initial coexistence of insulating monoclinic and metallic domains. The selective electrochemical reactivity of the rutile phase and the resulting defect-induced stabilization of this phase across a vastly expanded temperature window suggest a facile defect engineering route to tune electronic phase transitions.

  18. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    PubMed Central

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-01-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system. PMID:26860789

  19. Electric field gating near the metal-insulator transition using ionic liquid dielectrics

    NASA Astrophysics Data System (ADS)

    Hebard, Arthur; Misra, Rajiv; McCarthy, Mitchell

    2007-03-01

    Ionic liquids (ILs) are highly polar low-melting-temperature binary salts typically comprising nitrogen-containing organic cations and inorganic anions. Since there is no solvent, ILs are distinctly different from aqueous, organic, gel or polymer electrolytes. Using either coplanar or overlay gate configurations in which the IL is the gate dielectric, we demonstrate room temperature field-induced resistance changes on the order of a factor of 10^4 for thin conducting InOx films. There is a large asymmetry manifested by the significantly larger changes in impedance for negative gate voltage Vg (electron depletion) compared to positive Vg (electron enhancement). The pronounced frequency dependence over the range 10-2--10^6 Hz, due to the low ionic mobilities in the dielectric fluid, is modeled well by a simple RC circuit from which an effective areal gate capacitance can be derived. The induced surface charge densities and field-effect mobilities noticeably exceed those that can be achieved on similar films using AlOx dielectrics. In addition, the charge state can be frozen in by reducing the temperature below the glass transition (˜250K) of the IL, thus providing an opportunity for electric field tuning of metal-insulator transitions in a variety of novel thin-film systems.

  20. Buckley Prize Talk: The Suprerconductor-(Metal)-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Kapitulnik, Aharon

    2015-03-01

    While the classical theory of phase transitions has been extraordinarily successful, there are several reasons to exercise caution when applying this approach to the zero temperature superconducting transition. First, experimental identification of the relevant phases requires extrapolation to zero temperature, which becomes complicated, especially when one needs to identify sources of dissipation. In addition, since superconductivity may be highly inhomogeneous as appreciable superconducting order parameter may be concentrated in ``superconducting puddles'' due to disorder and/or spontaneous phase separation, the nature of the quantum phase transition to a superconducting state may be highly anomalous, where the system attempts to optimizes the formation of puddles with the Josephson coupling among them to obtain global superconductivity. In this talk we will review some of the consequences of these considerations, emphasizing the possible emergence of anomalous metallic phases close to the superconductor-insulator transition.

  1. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    NASA Astrophysics Data System (ADS)

    Menges, F.; Dittberner, M.; Novotny, L.; Passarello, D.; Parkin, S. S. P.; Spieser, M.; Riel, H.; Gotsmann, B.

    2016-04-01

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  2. Metal-insulator transition in Na{sub x}WO{sub 3}: Photoemission spectromicroscopy study

    SciTech Connect

    Paul, Sanhita Ghosh, Anirudha Raj, Satyabrata

    2014-04-24

    We have investigated the validity of percolation model, which is quite often invoked to explain the metal-insulator transition in sodium tungsten bronzes, Na{sub x}WO{sub 3} by photoelectron spectromicroscopy. The spatially resolved direct spectromicroscopic probing on both the insulating and metallic phases of high quality single crystals of Na{sub x}WO{sub 3} reveals the absence of any microscopic inhomogeneities embedded in the system within the experimental limit. Neither any metallic domains in the insulating host nor any insulating domains in the metallic host have been found to support the validity of percolation model to explain the metal-insulator transition in Na{sub x}WO{sub 3}.

  3. Elastic behavior around metal-insulator transition in PrRu 4P 12

    NASA Astrophysics Data System (ADS)

    Nakanishi, Y.; Kumagai, T.; Oikawa, M.; Saha, S. R.; Sugawara, H.; Sato, H.; Yoshizawa, M.

    2006-03-01

    Elastic properties of PrRu 4P 12 have been investigated by means of the ultrasonic measurement. A clear bend was observed in elastic constants C11, (C11-C12)/2 and C44 at metal-insulator transition temperature TMI of 62.3 K. Furthermore, C11, and ( C11-C12)/2 exhibits a pronounced elastic softening towards low temperature in the temperature range down to 1.5 K. This fact suggests strongly that PrΓ3 non-Kramers doublet ground state is realized in PrRu 4P 12 under the crystalline electric field (CEF) potential. This also suggests that an orbital degree of freedom still remains below TMI and a quadrupolar ordering has nothing to do with the metal-insulator transition. The elastic property and 4f ground state of Pr ions in this system will be discussed from the view point of CEF effect.

  4. Percolative metal-insulator transition in LaMnO3

    NASA Astrophysics Data System (ADS)

    Sherafati, M.; Baldini, M.; Malavasi, L.; Satpathy, S.

    2016-01-01

    We show that the pressure-induced metal-insulator transition (MIT) in LaMnO3 is fundamentally different from the Mott-Hubbard transition and is percolative in nature, with the measured resistivity obeying the percolation scaling laws. Using the Gutzwiller method to treat correlation effects in a model Hamiltonian that includes both Coulomb and Jahn-Teller interactions, we show, one, that the MIT is driven by a competition between electronic correlation and the electron-lattice interaction, an issue that has been long debated, and two, that with compressed volume, the system has a tendency towards phase separation into insulating and metallic regions, consisting, respectively, of Jahn-Teller distorted and undistorted octahedra. This tendency manifests itself in a mixed phase of intermixed insulating and metallic regions in the experiment. Conduction in the mixed phase occurs by percolation and the MIT occurs when the metallic volume fraction, steadily increasing with pressure, exceeds the percolation threshold vc≈0.29 . Measured high-pressure resistivity follows the percolation scaling laws quite well, and the temperature dependence follows the Efros-Shklovskii variable-range hopping behavior for granular materials.

  5. ARPES studies on metal-insulator-transition in NiS2-xSex

    NASA Astrophysics Data System (ADS)

    Han, Garam; Kim, Y. K.; Kyung, W. S.; Kim, Chul; Koh, Y. Y.; Lee, K. D.; Kim, C.

    2012-02-01

    Understanding Metal insulator transition (MIT) is one of the most challenging issues in condensed matter physics. NiS2-xSex (NSS) is a well known system for band width controlled MIT studies while most of High-Tc superconductors (HTSCs) are described within band filling MIT picture. Cubic pyrite NiS2 is known as a charge-transfer (CT) insulator and easily forms a solid solution with NiSe2, which is a good metal even though it is isostrucural and isoelectronic to NiS2. MIT is induced by Se alloying and is observed at a low temperature for x=0.5. The important merit is that there is no structure transition which often accompanies MIT. In spite of the importance of the system, even the experimental band dispersion is not known so far along with many controversies. For this reason, we performed angle resolved photoemission spectroscopy on high quality single crystals and successfully obtained Fermi surface maps of x=0.5, x=0.7 and x=0.8 systems (the metallic side). By doping dependent systematic studies on NSS and comparison with LDA calculation, we try to explain the relationship between band width and the MIT.

  6. Unraveling metal-insulator transition mechanism of VO₂ triggered by tungsten doping.

    PubMed

    Tan, Xiaogang; Yao, Tao; Long, Ran; Sun, Zhihu; Feng, Yajuan; Cheng, Hao; Yuan, Xun; Zhang, Wenqing; Liu, Qinghua; Wu, Changzheng; Xie, Yi; Wei, Shiqiang

    2012-01-01

    Understanding the mechanism of W-doping induced reduction of critical temperature (T(C)) for VO(2) metal-insulator transition (MIT) is crucial for both fundamental study and technological application. Here, using synchrotron radiation X-ray absorption spectroscopy combined with first-principles calculations, we unveil the atomic structure evolutions of W dopant and its role in tailoring the T(C) of VO(2) MIT. We find that the local structure around W atom is intrinsically symmetric with a tetragonal-like structure, exhibiting a concentration-dependent evolution involving the initial distortion, further repulsion, and final stabilization due to the strong interaction between doped W atoms and VO(2) lattices across the MIT. These results directly give the experimental evidence that the symmetric W core drives the detwisting of the nearby asymmetric monoclinic VO(2) lattice to form rutile-like VO(2) nuclei, and the propagations of these W-encampassed nuclei through the matrix lower the thermal energy barrier for phase transition.

  7. Disorder and Metal-Insulator Transitions in Weyl Semimetals.

    PubMed

    Chen, Chui-Zhen; Song, Juntao; Jiang, Hua; Sun, Qing-feng; Wang, Ziqiang; Xie, X C

    2015-12-11

    The Weyl semimetal (WSM) is a newly proposed quantum state of matter. It has Weyl nodes in bulk excitations and Fermi arc surface states. We study the effects of disorder and localization in WSMs and find three novel phase transitions. (i) Two Weyl nodes near the Brillouin zone boundary can be annihilated pairwise by disorder scattering, resulting in the opening of a topologically nontrivial gap and a transition from a WSM to a three-dimensional quantum anomalous Hall state. (ii) When the two Weyl nodes are well separated in momentum space, the emergent bulk extended states can give rise to a direct transition from a WSM to a 3D diffusive anomalous Hall metal. (iii) Two Weyl nodes can emerge near the zone center when an insulating gap closes with increasing disorder, enabling a direct transition from a normal band insulator to a WSM. We determine the phase diagram by numerically computing the localization length and the Hall conductivity, and propose that the novel phase transitions can be realized on a photonic lattice. PMID:26705648

  8. Control of the Metal-Insulator Transition at Complex Oxide Heterointerfaces through Visible Light.

    PubMed

    Lin, Jheng-Cyuan; Tra, Vu Thanh; Tsai, Dung-Sheng; Lin, Tai-Te; Huang, Po-Cheng; Hsu, Wei-Lun; Wu, Hui Jun; Huang, Rong; Van Chien, Nguyen; Yoshida, Ryuji; Lin, Jiunn-Yuan; Ikuhara, Yuichi; Chiu, Ya-Ping; Gwo, Shangjr; Tsai, Din Ping; He, Jr-Hau; Chu, Ying-Hao

    2016-01-27

    The coupling of the localized surface plasmon resonance of Au nanoparticles is utilized to deliver a visible-light stimulus to control conduction at the LaAlO3 /SrTiO3 interface. A giant photoresponse and the controllable metal-insulator transition are characterized at this heterointerface. This study paves a new route to optical control of the functionality at the heterointerfaces.

  9. Metal-insulator transition by holographic charge density waves.

    PubMed

    Ling, Yi; Niu, Chao; Wu, Jian-Pin; Xian, Zhuo-Yu; Zhang, Hongbao

    2014-08-29

    We construct a gravity dual for charge density waves (CDWs) in which the translational symmetry along one spatial direction is spontaneously broken. Our linear perturbation calculation on the gravity side produces the frequency dependence of the optical conductivity, which exhibits the two familiar features of CDWs, namely, the pinned collective mode and gapped single-particle excitation. These two features indicate that our gravity dual also provides a new mechanism to implement the metal to insulator phase transition by CDWs, which is further confirmed by the fact that dc conductivity decreases with the decreased temperature below the critical temperature. PMID:25215974

  10. Metal-insulator transition by holographic charge density waves.

    PubMed

    Ling, Yi; Niu, Chao; Wu, Jian-Pin; Xian, Zhuo-Yu; Zhang, Hongbao

    2014-08-29

    We construct a gravity dual for charge density waves (CDWs) in which the translational symmetry along one spatial direction is spontaneously broken. Our linear perturbation calculation on the gravity side produces the frequency dependence of the optical conductivity, which exhibits the two familiar features of CDWs, namely, the pinned collective mode and gapped single-particle excitation. These two features indicate that our gravity dual also provides a new mechanism to implement the metal to insulator phase transition by CDWs, which is further confirmed by the fact that dc conductivity decreases with the decreased temperature below the critical temperature.

  11. Control of plasmonic nanoantennas by reversible metal-insulator transition

    DOE PAGESBeta

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; Gamage, Sampath; Javani, Mohammad H.; Stockman, Mark I.; Haglund, Richard F.

    2015-09-11

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. In conclusion, these unique features open up promising novel applications in activemore » nanophotonics.« less

  12. Control of plasmonic nanoantennas by reversible metal-insulator transition

    SciTech Connect

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; Gamage, Sampath; Javani, Mohammad H.; Stockman, Mark I.; Haglund, Richard F.

    2015-09-11

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. In conclusion, these unique features open up promising novel applications in active nanophotonics.

  13. The metal-insulator transition in trivalent-ion-doped tungsten bronzes.

    PubMed

    Kasl, C; Hoch, M J R

    2014-02-12

    Electrical transport measurements have been made on a series of trivalent-ion-doped tungsten bronzes MxWO3, with M = Y (0.05 ≤ x ≤ 0.12) or La (0.05 ≤ x ≤ 0.19), over the temperature range 2-300 K. The results are consistent with a metal-insulator transition (MIT) at a critical concentration xC ≃ 0.06, which corresponds to an electron concentration nC ≃ 3.3 × 10(21) cm(-3). The appearance of small concentrations of non-cubic phases for x ∼ xC does not have a significant impact on the evolution of the electronic properties of the trivalent bronzes in the low x range. Analysis of the transport results, and a comparison of the findings with those obtained by other workers for the sodium tungsten bronzes, suggest that electron-electron interaction effects play a significant role in inducing the MIT in this type of disordered system.

  14. Chaos in fermionic many-body systems and the metal-insulator transition

    SciTech Connect

    Papenbrock, T.; Pluhar, Z.; Tithof, J.; Weidenmueller, H. A.

    2011-03-15

    We show that finite Fermi systems governed by a mean field and a few-body interaction generically possess spectral fluctuations of the Wigner-Dyson type and are, thus, chaotic. Our argument is based on an analogy to the metal-insulator transition. We construct a sparse random-matrix scaffolding ensemble (ScE) that mimics this transition. Our claim then follows from the fact that the generic random-matrix ensemble modeling a fermionic interacting many-body system is much less sparse than ScE.

  15. Chaos in Fermionic Many-Body Systems and the Metal Insulator Transition

    SciTech Connect

    Papenbrock, Thomas F; Pluhar, Z.; Tithof, J.; Weidenmueller, H. A.

    2011-01-01

    We show that finite Fermi systems governed by a mean field and a few-body interaction generically possess spectral fluctuations of the Wigner-Dyson type and are thus chaotic. Our proof is based on an analogy to the metal-insulator transition. We construct a sparse random-matrix ensemble H^{cr} that mimicks that transition. Our claim then follows from the fact that the generic random-matrix ensemble modeling a fermionic interacting many-body is much less sparse than H^{cr}.

  16. Pure electronic metal-insulator transition at the interface of complex oxides

    DOE PAGESBeta

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; et al

    2016-06-21

    We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as amore » powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.« less

  17. Broken symmetry and strangeness of the semiconductor impurity band metal-insulator transition.

    PubMed

    Phillips, J C

    1998-06-23

    The filamentary model of the metal-insulator transition in randomly doped semiconductor impurity bands is geometrically equivalent to similar models for continuous transitions in dilute antiferromagnets and even to the lambda transition in liquid He, but the critical behaviors are different. The origin of these differences lies in two factors: quantum statistics and the presence of long range Coulomb forces on both sides of the transition in the electrical case. In the latter case, in addition to the main transition, there are two satellite transitions associated with disappearance of the filamentary structure in both insulating and metallic phases. These two satellite transitions were first identified by Fritzsche in 1958, and their physical origin is explained here in geometrical and topological terms that facilitate calculation of critical exponents.

  18. Origin of the metal-insulator transition of indium atom wires on Si(111)

    NASA Astrophysics Data System (ADS)

    Kim, Sun-Woo; Cho, Jun-Hyung

    2016-06-01

    As a prototypical one-dimensional electron system, self-assembled indium (In) nanowires on the Si(111) surface have been believed to drive a metal-insulator transition by a charge-density-wave (CDW) formation due to Fermi surface nesting. Here, our first-principles calculations demonstrate that the structural phase transition from the high-temperature 4 ×1 phase to the low-temperature 8 ×2 phase occurs through an exothermic reaction with the consecutive bond-breaking and bond-making processes, giving rise to an energy barrier between the two phases as well as a gap opening. This atomistic picture for the phase transition not only identifies its first-order nature but also solves a long-standing puzzle of the origin of the metal-insulator transition in terms of the ×2 periodic lattice reconstruction of In hexagons via bond breakage and new bond formation, not by the Peierls-instability-driven CDW formation.

  19. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO2) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  20. The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates

    SciTech Connect

    Bubel, Simon; Glaudell, Anne M.; Mates, Thomas E.; Chabinyc, Michael L.; Hauser, Adam J.; Stemmer, Susanne

    2015-03-23

    For physical studies of correlated electron systems and for realizing novel device concepts, electrostatic modulation of metal-insulator transitions (MITs) is desired. The inherently high charge densities needed to modulate MITs make this difficult to achieve. The high capacitance of ionic liquids are attractive but, voltages are needed that can be in excess of the electrochemical stability of the system. Here, we show temperature/resistivity data that suggest electrostatic modulation of the MIT temperature of NdNiO{sub 3} in a wide regime. However, additional voltammetric and x-ray photoelectron spectroscopy measurements demonstrate the electrochemical impact of the electrostatic doping approach with ionic liquids.

  1. Ultrafast electronic dynamics in the metal-insulator transition compound NdNiO3

    NASA Astrophysics Data System (ADS)

    Ruello, P.; Zhang, S.; Laffez, P.; Perrin, B.; Gusev, V.

    2007-10-01

    Visible ultrafast optical property studies have been performed in the metal-insulator transition compound NdNiO3 from room temperature down to 16K . A clear slowing down of the electronic relaxation is reported when the system becomes insulating. Two characteristic times of electronic relaxation have been found in the insulating phase while a single one is observed in the metallic state. Moreover, the magnitude of the ultrafast electronic transient reflectivity exhibits a drastic increase in the insulating state. Finally, a hysteresis of the electronic response is evidenced in accordance with electrical resistivity measurements.

  2. Phase coexistence and metal-insulator transition in few-layer phosphorene: a computational study.

    PubMed

    Guan, Jie; Zhu, Zhen; Tománek, David

    2014-07-25

    Based on ab initio density functional calculations, we propose γ-P and δ-P as two additional stable structural phases of layered phosphorus besides the layered α-P (black) and β-P (blue) phosphorus allotropes. Monolayers of some of these allotropes have a wide band gap, whereas others, including γ-P, show a metal-insulator transition caused by in-layer strain or changing the number of layers. An unforeseen benefit is the possibility to connect different structural phases at no energy cost. This becomes particularly valuable in assembling heterostructures with well-defined metallic and semiconducting regions in one contiguous layer.

  3. Metal-Insulator Transition in the Hubbard Model: Correlations and Spiral Magnetic Structures

    NASA Astrophysics Data System (ADS)

    Timirgazin, Marat A.; Igoshev, Petr A.; Arzhnikov, Anatoly K.; Irkhin, Valentin Yu.

    2016-03-01

    The metal-insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the t-t^' Hubbard model at half-filling by using both the generalized for the case of spiral order Hartree-Fock approximation (HFA) and Kotliar-Ruckenstein slave-boson approach. It turns out that the magnetic scenario of MIT becomes superior over the non-magnetic one. The electron correlations lead to some suppression of the spiral phases in comparison with HFA. We found the presence of a metallic antiferromagnetic (spiral) phase in the case of three-dimensional lattices.

  4. Correlation Between Metal-Insulator Transition Characteristics and Electronic Structure Changes in Vanadium Oxide Thin Films

    SciTech Connect

    Ruzmetov,D.; Senanayake, S.; Narayanamurti, V.; Ramanathan, S.

    2008-01-01

    We correlate electron transport data directly with energy band structure measurements in vanadium oxide thin films with varying V-O stoichiometry across the VO2 metal-insulator transition. A set of vanadium oxide thin films were prepared by reactive dc sputtering from a V target at various oxygen partial pressures (O2 p.p.). Metal-insulator transition (MIT) characteristic to VO2 can be seen from the temperature dependence of electrical resistance of the films sputtered at optimal O2 p.p. Lower and higher O2 p.p. result in disappearance of the MIT. The results of the near edge x-ray absorption fine structure spectroscopy of the O K edge in identical VO films are presented. Redistribution of the spectral weight from {sigma}* to {pi}* bands is found in the vanadium oxide films exhibiting stronger VO2 MIT. This is taken as evidence of the strengthening of the metal-metal ion interaction with respect to the metal-ligand and indirect V-O-V interaction in vanadium oxide films featuring sharp MIT. We also observe a clear correlation between MIT and the width and area of the lower {pi}* band, which is likely to be due to the emergence of the d|| band overlapping with {pi}*. The strengthening of this d|| band near the Fermi level only in the vanadium oxide compounds displaying the MIT points out the importance of the role of the d|| band and electron correlations in the phase transition.

  5. Dynamics of the metal-insulator transition of donor-doped SrTi O3

    NASA Astrophysics Data System (ADS)

    Meyer, René; Zurhelle, Alexander F.; De Souza, Roger A.; Waser, Rainer; Gunkel, Felix

    2016-09-01

    The electrical properties of donor-doped SrTi O3 (n -STO) are profoundly affected by an oxidation-induced metal-insulator transition (MIT). Here we employ dynamical numerical simulations to examine the high-temperature MIT of n -STO over a large range of time and length scales. The simulations are based on the Nernst-Planck equations, the continuity equations, and the Poisson equation, in combination with surface lattice disorder equilibria serving as time-dependent boundary conditions. The simulations reveal that n -STO, upon oxidation, develops a kinetic space charge region (SCR) in the near-surface region. The surface concentrations of the variously mobile defects (electrons, Sr vacancies, and O vacancies) are found to vary over time and to differ considerably from the values of the new equilibrium. The formation of the SCR in which electrons are strongly depleted occurs within nanoseconds, i.e., it yields a fast MIT in the near-surface region during the oxidation process. As a result of charge (over-)compensation by Sr vacancies incorporated at the surface of n -STO, this SCR is much more pronounced than conventionally expected. In addition, we find an anomalous increase of O vacancy concentration at the surface upon oxidation caused by the SCR. Our simulations show that the SCR fades in the long term as a result of the slow in-diffusion of Sr vacancies. We discuss implications for the electrical conductivity of n -STO crystals used as substrates for epitaxial oxide thin films, of n -STO thin films and interfaces, and of polycrystalline n -STO with various functionalities.

  6. Thermally driven analog of the Barkhausen effect at the metal-insulator transition in vanadium dioxide

    SciTech Connect

    Huber-Rodriguez, Benjamin; Ji, Heng; Chen, Chih-Wei; Kwang, Siu Yi; Hardy, Will J.; Morosan, Emilia; Natelson, Douglas

    2014-09-29

    The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free means of examining VO{sub 2} material properties. We report contact-free, low-strain studies of the MIT through an inductive bridge approach sensitive to the magnetic response of VO{sub 2} powder. Rather than observing the expected step-like change in susceptibility at the transition, we argue that the measured response is dominated by an analog of the Barkhausen effect, due to the extremely sharp jump in the magnetic response of each grain as a function of time as the material is cycled across the phase boundary. This effect suggests that future measurements could access the dynamics of this and similar phase transitions.

  7. Thermal Conductivity and Thermopower near the 2D Metal-Insulator transition, Final Technical Report

    SciTech Connect

    SARACHIK, MYRIAM P

    2015-02-20

    STUDIES OF STRONGLY-INTERACTING 2D ELECTRON SYSTEMS – There is a great deal of current interest in the properties of systems in which the interaction between electrons (their potential energy) is large compared to their kinetic energy. We have investigated an apparent, unexpected metal-insulator transition inferred from the behavior of the temperature-dependence of the resistivity; moreover, detailed analysis of the behavior of the magnetoresistance suggests that the electrons’ effective mass diverges, supporting this scenario. Whether this is a true phase transition or crossover behavior has been strenuously debated over the past 20 years. Our measurements have now shown that the thermoelectric power of these 2D materials diverges at a finite density, providing clear evidence that this is, in fact, a phase transition to a new low-density phase which may be a precursor or a direct transition to the long sought-after electronic crystal predicted by Eugene Wigner in 1934.

  8. Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects.

    PubMed

    Syrlybekov, Askar; Wu, Han-Chun; Mauit, Ozhet; Wu, Ye-Cun; Maguire, Pierce; Khalid, Abbas; Coileáin, Cormac Ó; Farrell, Leo; Heng, Cheng-Lin; Abid, Mohamed; Liu, Huajun; Yang, Li; Zhang, Hong-Zhou; Shvets, Igor V

    2015-09-01

    Recently, significant attention has been paid to the resistance switching (RS) behaviour in Fe3O4 and it was explained through the analogy of the electrically driven metal-insulator transition based on the quantum tunneling theory. Here, we propose a method to experimentally support this explanation and provide a way to tune the critical switching parameter by introducing self-aligned localized impurities through the growth of Fe3O4 thin films on stepped SrTiO3 substrates. Anisotropic behavior in the RS was observed, where a lower switching voltage in the range of 10(4) V cm(-1) is required to switch Fe3O4 from a high conducting state to a low conducting state when the electrical field is applied along the steps. The anisotropic RS behavior is attributed to a high density array of anti-phase boundaries (APBs) formed at the step edges and thus are aligned along the same direction in the film which act as a train of hotspot forming conduits for resonant tunneling. Our experimental studies open an interesting window to tune the electrical-field-driven metal-insulator transition in strongly correlated systems.

  9. Redox chemistry and metal-insulator transitions intertwined in a nano-porous material.

    PubMed

    Maximoff, Sergey N; Smit, Berend

    2014-06-06

    Metal-organic frameworks are nano-porous adsorbents of relevance to gas separation and catalysis, and separation of oxygen from air is essential to diverse industrial applications. The ferrous salt of 2,5-dihydroxy-terephthalic acid, a metal-organic framework of the MOF74 family, can selectively adsorb oxygen in a manner that defies the classical picture: adsorption sites either do or do not share electrons over a long range. Here we propose, and then justify phenomenologically and computationally, a mechanism. Charge-transfer-mediated adsorption of electron acceptor oxygen molecules in the metal-organic framework, which is a quasi-one-dimensional electron-donor semiconductor, drives and is driven by quasi-one-dimensional metal-insulator-metal transitions that localize or delocalize the quasi-one-dimensional electrons. This mechanism agrees with the empirical evidence, and predicts a class of nano-porous semiconductors or metals and potential adsorbents and catalysts in which chemistry and metal-insulator-metal transitions intertwine.

  10. Superconductivity and bandwidth-controlled Mott metal-insulator transition in 1T-TaS2-xSex

    NASA Astrophysics Data System (ADS)

    Ang, R.; Miyata, Y.; Ieki, E.; Nakayama, K.; Sato, T.; Liu, Y.; Lu, W. J.; Sun, Y. P.; Takahashi, T.

    2013-09-01

    We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) of layered chalcogenide 1T-TaS2-xSex to elucidate the electronic states especially relevant to the occurrence of superconductivity. We found a direct evidence for a Ta-5d-derived electron pocket associated with the superconductivity, which is fragile against a Mott-gap opening observed in the insulating ground state for S-rich samples. In particular, a strong electron-electron interaction-induced Mott gap driven by a Ta 5d orbital also exists in the metallic ground state for Se-rich samples, while finite ARPES intensity near the Fermi level likely originating from a Se 4p orbital survives, indicative of the orbital-selective nature of the Mott transition. Present results suggest that effective electron correlation and p-d hybridization play a crucial role to tune the superconductivity and Mott metal-insulator transition.

  11. Light scattering by epitaxial VO{sub 2} films near the metal-insulator transition point

    SciTech Connect

    Lysenko, Sergiy Fernández, Felix; Rúa, Armando; Figueroa, Jose; Vargas, Kevin; Cordero, Joseph; Aparicio, Joaquin; Sepúlveda, Nelson

    2015-05-14

    Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.

  12. Electronic Excitations and Metal-Insulator Transition inPoly(3-hexylthiophene) Organic Field-Effect Transistors

    SciTech Connect

    Sai, N.; Li, Z.Q.; Martin, M.C.; Basov, D.N.; Di Ventra, M.

    2006-11-07

    We carry out a comprehensive theoretical and experimentalstudy of charge injection in poly(3-hexylthiophene) (P3HT) to determinethe most likely scenario for metal-insulator transition in this system.Wecalculate the optical-absorption frequencies corresponding to a polaronand a bipolaron lattice in P3HT. We also analyze the electronicexcitations for three possible scenarios under which a first- or asecond-order metal-insulator transition can occur in doped P3HT. Thesetheoretical scenarios are compared with data from infrared absorptionspectroscopy on P3HT thin-film field-effect transistors (FETs). Ourmeasurements and theoretical predictions suggest that charge-inducedlocalized states in P3HT FETs are bipolarons and that the highest dopinglevel achieved in our experiments approaches that required for afirst-order metal-insulator transition.

  13. Role of magnetic and orbital ordering at the metal-insulator transition in NdNiO{sub 3}

    SciTech Connect

    Scagnoli, V.; Staub, U.; Mulders, A. M.; Janousch, M.; Meijer, G. I.; Hammerl, G.; Tonnerre, J. M.; Stojic, N.

    2006-03-01

    Soft x-ray resonant scattering at the Ni L{sub 2,3} edges is used to test models of magnetic- and orbital-ordering below the metal-insulator transition in NdNiO{sub 3}. The large branching ratio of the L{sub 3} to L{sub 2} intensities of the (1/2 0 1/2) reflection and the observed azimuthal angle and polarization dependence originates from a noncollinear magnetic structure. The absence of an orbital signal and the noncollinear magnetic structure show that the nickelates are materials for which orbital ordering is absent at the metal-insulator transition.

  14. Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

    PubMed

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  15. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    PubMed Central

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows. PMID:27033314

  16. The metal-insulator transition in vanadium dioxide explored by optical methods

    NASA Astrophysics Data System (ADS)

    Qazilbash, M. M.; Burch, K. S.; Basov, D. N.; Chae, B. G.; Kim, H. T.

    2006-03-01

    The nature of the metal-insulator transition (MIT) in vanadium dioxide (VO2) remains a matter of debate. At the center of the debate is the relative importance of electron-electron correlations to the MIT. We study the MIT with spectroscopic ellipsometry on VO2 films grown on sapphire substrates, and determine the optical constants in the insulating and metallic states from 50 meV to 5.5 eV. The changes in the optical constants with temperature in the metallic state have been tracked from 360 K up to 500 K. The redistribution of spectral weight in the real part of the optical conductivity as a result of the MIT will be discussed with emphasis on the changes to the interband transitions. This work has been supported by Department of Energy Grant No.DE-FG03-00ER45799.

  17. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    NASA Astrophysics Data System (ADS)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  18. Raman study of the metal-insulator transition in pyrochlore Mo oxides

    NASA Astrophysics Data System (ADS)

    Taniguchi, K.; Katsufuji, T.; Iguchi, S.; Taguchi, Y.; Takagi, H.; Tokura, Y.

    2004-09-01

    Raman scattering spectra have been investigated for the correlated 4d -electron system, R2Mo2O7 ( R=Nd , Sm , Gd , Tb , Dy , Nd1-xDyx ), which undergoes a metal-insulator transition with changing the rare-earth ion R , or equivalently the one-electron bandwidth. It is found that several phonon peaks modulating the Mo-O-Mo bond angle appear in the metallic phase ( R=Nd , Sm , Gd , Nd1-xDyx ), whereas they are remarkably suppressed in intensity in the insulating phase ( R=Tb , Dy ). This result indicates that the phonon modes of R2Mo2O7 are coupled with the electron-hole excitation across the Fermi level, thus probing sensitively the low-energy charge dynamics in the vicinity of the bandwidth-control Mott transition.

  19. Metal-insulator transitions in non-stoichiometric, chromium, and titanium doped vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Metcalf, Patricia Ann

    The major focus of the research was on the preparation of vanadium oxide thin films with metal-insulator transitions equivalent to those found in single crystals. Thin films of VO2, V1-x M'xO 2 (M' = Cr, Ti, Mo, W), V3O5, V6O 13, V2O3, and (V1-xMx) 2O3 (M = Cr, Ti) were prepared by the reduction of sol-gel derived vanadium oxide films in inert atmospheres. Subsequent anneals of un-doped V2O3 films in controlled oxygen atmosphere conditions yielded non-stoichiometric V2-yO3 films. In addition, thick films of V2O3 were produced using laser lift-off and particle embedding techniques. Vanadium oxide nano-crystals and nano-powders were synthesized via hydrothermal techniques for use as the embedded particle materials. The effect of thickness and orientation on the structure was examined in the V2O3 films. The majority of the films were grown on (0001)-oriented sapphire substrates, in addition films were grown on (11 20)-oriented sapphire, x and z-oriented-LiTaO3, (101)-oriented SiO2, and ZnSe substrates. V2O3 films with thicknesses of less than 450 nm grown on (0001)-oriented sapphire were shown to consist of well oriented, 10--100 nm diameter columnar grains when examined by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. Films deposited on (0001)-oriented sapphire were found to possess a preferred (0001) orientation and those deposited on (11 20)-oriented sapphire, a preferred (1120) orientation. The x-ray diffraction patterns indicated that other orientations were present for films thicker than 450 nm. The optical transmission and electrical conductivity measurements on films revealed metal-insulator transitions characteristic of single crystal V2O3, (V1-xCrx)2O 3, (V1-zTiz)2O3, V 2-yO3 and VO2. Upon cooling from room temperature, the V2O3 films displayed a reversible metal-insulator transition at about 150 K, with an increase in electrical resistivity of about 106 and a change in optical transmission of

  20. Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism

    SciTech Connect

    Stone, P.R.; Alberi, K.; Tardif, S.K.Z.; Beeman, J.W.; Yu, K.M.; Walukiewicz, W.; Dubon, O.D.

    2008-02-07

    We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4percent of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4 percent As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature TC from 113 K to 60 K (100 K to 65 K) upon the introduction of 3.1 percent P (1percent N) into the As sublattice.

  1. Disappearance of metal-insulator transition in NdNiO3/LaAlO3 films by ion irradiation controlled stress

    NASA Astrophysics Data System (ADS)

    Kumar, Yogesh; Choudhary, R. J.; Kumar, Ravi

    2016-09-01

    The effect of strain on the metal-insulator transition (MIT) of the epitaxial NdNiO3 film on the c-axis oriented LaAlO3 single crystal, grown by pulsed laser deposition, has been investigated. Swift heavy ion irradiation was used to vary the strain state of the deposited film. X-ray diffraction confirmed a systematic fluence dependent rise in the in-plane compressive strain, while maintaining the epitaxy of the film. This in-plane compressive strain has been found to reduce the MIT temperature, which finally disappeared for the highest fluence of the irradiation. This is also corroborated with the Raman spectroscopy measurements which suggest that the ion irradiation induced stress is responsible for the suppression of the metal-insulator transition.

  2. Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

    SciTech Connect

    Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni; Hildebrand, Helga; Schmuki, Patrik

    2013-11-11

    The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

  3. The metal-insulator phase transition in the strained GdBiTe3

    NASA Astrophysics Data System (ADS)

    Van Quang, Tran; Kim, Miyoung

    2013-05-01

    In this work, we investigated the electronic structures and magnetic properties of the GdBiTe3 alloy employing a first-principles all-electron density-functional approach, aiming to understand the magnetic phase stability and electronic structure dependences on the exchange correlation potential and the strain. The results show that the ferromagnetic phase is energetically more stable over the paramagnetic phase and the metal-insulator phase transition occurs upon the lattice distortion via the strain along the perpendicular c direction, which is not influenced by the strength of correlation energy introduced to describe the localized f orbitals. Thermoelectric transport properties are also investigated to reveal that the compressive strain markedly enhances the Seebeck coefficient, which is reduced in comparison with the Bismuth telluride due to the Gd doping.

  4. Percolative Metal-Insulator transition in the doped Hubbard-Holstein model with the Gutzwiller Approach

    NASA Astrophysics Data System (ADS)

    Moradi Kurdestany, Jamshid; Satpathy, Sashi

    Motivated by the recent progress in understanding of Mott insulators away from half filling, observed in many perovskite oxides, we study the metal-insulator transition in the Hubbard-Holstein model, which contains both the Coulomb and the electron-lattice (Jahn Teller) interactions by using the Gutzwiller variational method. We find that strong electron-lattice Interaction leads to phase separation, which however can be frustrated due to the long-range Coulomb interaction, resulting in a mixed phase consisting of puddles of metallic phases embedded in an insulating matrix. When the dopant concentration exceeds a threshold value xc , the metallic part forms a percolating network leading to metallic conduction. Depending on the strength of the electron-lattice interaction, xc can be of the order of 0.05 - 0.20 or so, which is the typical value observed in the perovskites.

  5. Mott metal-insulator transition in a metallic liquid - Gutzwiller molecular dynamics simulations

    NASA Astrophysics Data System (ADS)

    Barros, Kipton; Chern, Gia-Wei; Batista, Cristian D.; Kress, Joel D.; Kotliar, Gabriel

    2015-03-01

    Molecular dynamics (MD) simulations are crucial to modern computational physics, chemistry, and materials science, especially when combined with potentials derived from density-functional theory. However, even in state of the art MD codes, the on-site Coulomb repulsion is only treated at the self-consistent Hartree-Fock level. This standard approximation may miss important effects due to electron correlations. The Gutzwiller variational method captures essential correlated-electron physics yet is much faster than, e.g., the dynamical-mean field theory approach. We present our efficient Gutzwiller-MD implementation. With it, we investigate the Mott metal-insulator transition in a metallic fluid and uncover several surprising static and dynamic properties of this system.

  6. Phase coexistence and Mott metal-insulator transition in the doped Hubbard-Holstein model

    NASA Astrophysics Data System (ADS)

    Moradi Kurdestany, Jamshid; Satpathy, Sashi

    2015-03-01

    Motivated by recent progress in the understanding of the Mott insulators away from half filling [?], often observed in the oxide materials, we study the role of the electron-lattice interaction vis-à-vis the electron correlations by studying the one-band Hubbard-Holstein model using the Gutzwiller variational method. Our theory predicts phase separation for sufficiently strong electron-lattice interaction, which however is frustrated in the solid due to the long-range Coulomb interaction of the dopant atoms, resulting in puddles of metallic phases embedded in the insulating matrix. Metallic state occurs when the volume fraction of the metallic phase exceeds the percolation threshold, as the dopant concentration is increased. Connection is made with the experimentally observed metal-insulator transition in the complex oxides.

  7. Hallmarks of Metal Insulator transition in Doped Sr2IrO4

    NASA Astrophysics Data System (ADS)

    Cao, Yue; Wang, Qiang; Dhaka, Rajendra; Waugh, Justin; Reber, Theodore; Li, Haoxiang; Parham, Stephen; Zhou, Xiaoqing; Park, Seung Ryong; Qi, Tongfei; Korneta, Oleksandr; Plumb, Nicholas; Bostwick, Aaron; Rotenberg, Eli; Denlinger, Jonathan; Hermele, Michael; Cao, Gang; Dessau, Daniel

    2014-03-01

    How Mott insulators acquire metallicity upon the introduction of extra carriers lies at the heart of correlated electron physics. The evolution of the electronic structure and low energy dynamics in the ultra-low doped region where the Mottness begins to break down is a critical place to study this physics. We report ARPES studies of the Rh and La doped Sr2IrO4 and show the appearance and evolution of a pseudogap and Fermi arcs. Further more we present evidence how the Mott gap breaks down with a profound change in the band structure. The experimental results in the doped iridates resemble those observed in the cuprate systems, which are prototype Mott insulators, and suggest we could establish a series of signatures that occur in the metal insulator transition. Now at Los Alamos National Lab.

  8. Experimental Observation of a Metal-insulator Transition in 2D at Zero Magnetic Field

    NASA Astrophysics Data System (ADS)

    Kravchenko, S. V.

    1996-03-01

    The scaling theory of Abrahams et al. ^1 has had considerable success in describing many features of metal-insulator transitions. Within this theory, which was developed for non-interacting electrons, no such transition is possible in two-dimensional electron systems (2DES) in the absence of a magnetic field. However, we show experimentally that an ultra-high-mobility 2DES on the surface of silicon does exhibit the signature of a true metal-insulator phase transition at zero magnetic field at a critical electron density n_c ~10^11 cm-2. The energy of electron-electron interactions, ignored in the scaling theory,^1 is the dominant parameter in this 2DES. The resistivity, ρ, is empirically found to scale near the critical point both with temperature T and electric field E so that it can be represented by the form ρ(T,n_s)=ρ(T/T_0(n_s)) as Earrow0 or ρ(E,n_s)=ρ(E/E_0(n_s)) as Tarrow0. At the transition, the resistivity is close to 3h/e^2. Both scaling parameters, T0 and E_0, show power law behavior at the critical point. This is characteristic of a true phase transition and strongly resembles, in particular, the superconductor-insulator transition in disordered thin films,^2 as well as the transition between quantum Hall liquid and insulator.^3 Many high-mobility samples from two different sources (Institute for Metrological Service, Russia, and Siemens AG, Germany) with different oxide thicknesses and gate materials have been studied and similar results were found. Work done in collaboration with J. E. Furneaux, Whitney Mason, V. M. Pudalov, and M. D'Iorio, supported by NSF. ^1 E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979). ^2 Y. Liu, K. A. McGreer, B. Nease, D. B. Haviland, G. Martinez, J. W. Halley, and A. M. Goldman, Phys. Rev. Lett. 67, 2068 (1991). ^3 T. Wang, K. P. Clark, G. F. Spencer, A. M. Mack, and W. P. Kirk, Phys. Rev. Lett. 72, 709 (1994).

  9. Systematics in the metal-insulator transition temperatures in vanadium oxides

    NASA Astrophysics Data System (ADS)

    Fisher, B.; Genossar, J.; Reisner, G. M.

    2016-01-01

    Nine of the known vanadium oxides, VO 2 - 1 / n (n - a positive or negative integer) with n = 2 - 6 , 8 , 9 , ∞ and -6, undergo metal-insulator transitions accompanied by structural transitions, at various temperatures TMIT (V7O13 is metallic above T=0). Among the persistent efforts to determine the driving force(s) of these transitions, electron-electron (Mott-like) and electron-phonon (Peierls-like) interactions, there were several attempts to find systematics in TMIT as function of n. Here we present an unexpectedly simple and illuminating systematics that holds for positive n: if TMIT is the absolute value of the difference between TM(n) and TP(n), which represent the contributions of electron-electron and electron-phonon interactions, respectively, all data points of TM-TP versus 1/n lie on, or close to, two simple straight lines; one is TM -TP =T∞(7 / n - 1) for V3O5, V4O7, V5O9, V7O13, V8O15, V9O17 and VO2 and the other is TM -TP =T∞(3 / n - 1) for V2O3, V6O11 and VO2.

  10. Infrared evidence of a Slater metal-insulator transition in NaOsO3

    PubMed Central

    Vecchio, I. Lo; Perucchi, A.; Di Pietro, P.; Limaj, O.; Schade, U.; Sun, Y.; Arai, M.; Yamaura, K.; Lupi, S.

    2013-01-01

    The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT still remains elusive. We employ terahertz and infrared spectroscopy to investigate the MIT in the NaOsO3 3D antiferromagnet. From the optical conductivity analysis we find evidence for a continuous opening of the energy gap, whose temperature dependence can be well described in terms of a second order phase transition. The comparison between the experimental Drude spectral weight and the one calculated through Local Density Approximation (LDA) shows that electronic correlations play a limited role in the MIT. All the experimental evidence demonstrates that NaOsO3 is the first known 3D Slater insulator. PMID:24141899

  11. Metal-Insulator Transition in nanoparticle solids: a kinetic Monte Carlo study

    NASA Astrophysics Data System (ADS)

    Zimanyi, Gergely; Qu, Luman; Voros, Marton

    Nanoparticle (NP) solids recently emerged as a promising platform for high performance electronic/optoelectronic devices, including third generation solar cells, light emitting diodes and field effect transistors. A challenge of NP films is that their charge transport is in the unfavorable hopping/insulating regime. Recent experiments showed that it is possible to tune the NP solids through a Metal-Insulator Transition (MIT) via ligand engineering and ALD matrix infilling. However, the microscopic understanding of this transition is not yet clear. To address this challenge, we developed a Kinetic Monte Carlo transport modeling framework that builds on determining NP parameters from ab initio-based calculations of the energy level structures, charging energies and overlaps, and then uses these to compute the hopping mobility across a disordered NP array by the Marcus and Miller-Abrahams mechanisms. We reproduced and explained the observed non-monotonous dependence of the mobility on the NP diameter. Centrally, we extended our platform to be able to capture the MIT. We determined the MIT phase boundary on the (NP-NP overlap - Electron density) plane. We demonstrated that all mobilities fall on a universal scaling curve, allowing us to determine the critical behavior across the MIT. Supported by: UC Davis Office of Research RISE ANSWER Grant.

  12. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3Ru2O7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Bohnenbuck, B.; Chuang, Y.-D.; Geck, J.; Tokura, Y.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Sawatzky, G. A.; Damascelli, A.

    2010-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr3(Ru1-xMnx)2O7, performed at both Ru and Mn L-edges. Resonant magnetic superstructure reflections, which indicate an incipient instability of the parent compound, are detected below the transition. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x˜0.05 Mn substitution. In collaboration with A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley Lab), I. Zegkinoglou, M.W. Haverkort (MPI, Stuttgart), I.S. Elfimov, D.G. Hawthorn (UBC), R. Mathieu, S. Satow, H. Takagi (Tokyo), H.-H. Wu and C. Sch"ußler-Langeheine (Cologne).

  13. Switching adhesion forces by crossing the metal-insulator transition in Magnéli-type vanadium oxide crystals.

    PubMed

    Stegemann, Bert; Klemm, Matthias; Horn, Siegfried; Woydt, Mathias

    2011-01-01

    Magnéli-type vanadium oxides form the homologous series V(n)O(2) (n) (-1) and exhibit a temperature-induced, reversible metal-insulator first order phase transition (MIT). We studied the change of the adhesion force across the transition temperature between the cleavage planes of various vanadium oxide Magnéli phases (n = 3 … 7) and spherical titanium atomic force microscope (AFM) tips by systematic force-distance measurements with a variable-temperature AFM under ultrahigh vacuum conditions (UHV). The results show, for all investigated samples, that crossing the transition temperatures leads to a distinct change of the adhesion force. Low adhesion corresponds consistently to the metallic state. Accordingly, the ability to modify the electronic structure of the vanadium Magnéli phases while maintaining composition, stoichiometry and crystallographic integrity, allows for relating frictional and electronic material properties at the nano scale. This behavior makes the vanadium Magnéli phases interesting candidates for technology, e.g., as intelligent devices or coatings where switching of adhesion or friction is desired.

  14. Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and WxMo1-xTe2 Alloy.

    PubMed

    Zhang, Chenxi; Kc, Santosh; Nie, Yifan; Liang, Chaoping; Vandenberghe, William G; Longo, Roberto C; Zheng, Yongping; Kong, Fantai; Hong, Suklyun; Wallace, Robert M; Cho, Kyeongjae

    2016-08-23

    Metal-insulator transitions in low-dimensional materials under ambient conditions are rare and worth pursuing due to their intriguing physics and rich device applications. Monolayer MoTe2 and WTe2 are distinguished from other TMDs by the existence of an exceptional semimetallic distorted octahedral structure (T') with a quite small energy difference from the semiconducting H phase. In the process of transition metal alloying, an equal stability point of the H and the T' phase is observed in the formation energy diagram of monolayer WxMo1-xTe2. This thermodynamically driven phase transition enables a controlled synthesis of the desired phase (H or T') of monolayer WxMo1-xTe2 using a growth method such as chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Furthermore, charge mediation, as a more feasible method, is found to make the T' phase more stable than the H phase and induce a phase transition from the H phase (semiconducting) to the T' phase (semimetallic) in monolayer WxMo1-xTe2 alloy. This suggests that a dynamic metal-insulator phase transition can be induced, which can be exploited for rich phase transition applications in two-dimensional nanoelectronics. PMID:27415610

  15. Phonon modes and metal-insulator transition in GaN crystals under pressure

    NASA Astrophysics Data System (ADS)

    Falkovsky, L. A.; Knap, W.; Chervin, J. C.; Wisniewski, P.

    1998-05-01

    Close inspection of experimental results given by Perlin and co-workers [Phys. Status Solidi B 198, 223 (1996); Phys. Rev. B 45, 83 (1992)] shows that three phenomena were observed in that work: optical-phonon shift and splitting under pressures, which can be explained in a symmetry consideration for the Γ point of hexagonal crystals; inhomogeneous broadening and shift of phonon frequencies due to strain fluctuations which are described in the present paper using Dyson's equation for the phonon Green's function; phonon hardening and decreasing of width in the metal-insulator transition in GaN under pressure of about 22 GPa. The last effect results from the interaction between electrons and optical phonons, but this interaction makes no impact on the line shape (Fano effect). We find that the phonon line shape in semiconductors with small carrier concentration is determined by strain fluctuations or imperfections. Estimates show that the electron-phonon interaction is the reason why optical phonons are not detected in typical metals.

  16. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Hippalgaonkar, Kedar; Lee, Sangwook; Ko, Changhyun; Yang, Fan; Suh, Joonki; Liu, Kai; Wang, Kevin; Zhang, Xiang; Dames, Chris; Wu, Junqiao

    In an electrically conductive solid, the Wiedemann-Franz (WF) law requires the electronic contribution to thermal conductivity to be proportional to the product of electrical conductivity and absolute temperature , where the ratio is the Lorenz number, typically not much different from the Sommerfeld value L0 = 2.44x10-8 W-ohm-K-2 at room temperature. The WF law reflects a basic property of metals where charge and heat are both carried by the same quasiparticles that both experience elastic scattering. At temperatures below the Debye temperature, the WF law has been experimentally shown to be robust in conventional conductors, with violations theoretically predicted or experimentally observed in strongly correlated electron systems or Luttinger liquids. However, the experimentally observed violations are at very low temperatures. Here we report breakdown of the WF law in a strongly correlated metal, in which the electronic thermal conductivity and L nearly vanish at temperatures above room temperature, where the electronic thermal conductivity amounts to only <~5% of the value expected from the WF law. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition.

  17. Temperature dependence of thermal conductivity of VO2 thin films across metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Kizuka, Hinako; Yagi, Takashi; Jia, Junjun; Yamashita, Yuichiro; Nakamura, Shinichi; Taketoshi, Naoyuki; Shigesato, Yuzo

    2015-05-01

    Thermal conductivity of a 300-nm-thick VO2 thin film and its temperature dependence across the metal-insulator phase transition (TMIT) were studied using a pulsed light heating thermoreflectance technique. The VO2 and Mo/VO2/Mo films with a VO2 thickness of 300 nm were prepared on quartz glass substrates: the former was used for the characterization of electrical properties, and the latter was used for the thermal conductivity measurement. The VO2 films were deposited by reactive rf magnetron sputtering using a V2O3 target and an Ar-O2 mixture gas at 645 K. The VO2 films consisted of single phase VO2 as confirmed by X-ray diffraction and electron beam diffraction. With increased temperature, the electrical resistivity of the VO2 film decreased abruptly from 6.3 × 10-1 to 5.3 × 10-4 Ω cm across the TMIT of around 325-340 K. The thermal conductivity of the VO2 film increased from 3.6 to 5.4 W m-1 K-1 across the TMIT. This discontinuity and temperature dependence of thermal conductivity can be explained by the phonon heat conduction and the Wiedemann-Franz law.

  18. Magnetic and Transport Properties of Amorphous GdGe Alloys near the Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Sinenian, Nareg; Smith, D. J.

    2005-03-01

    The temperature and field dependence of magnetization and conductivity of amorphous Ge doped with the rare earth Gd (a-GdxGe1-x) has been measured for a range of x near the metal-insulator transition 0.08 < x <0.25). As in previous work on a-Gd-Si, high field magnetization and low field susceptibility per Gd atom in the paramagnetic state above the spin glass freezing temperature are significantly suppressed below that of non-interacting Gd, indicative of strong antiferromagnetic interactions. However, unlike a-Gd-Si, the low field susceptibility does not fit a Curie-Weiss law, instead showing 1/T^α dependence. As in a-Gd-Si, Gd causes localization of charge carriers below a characteristic temperature T*, which is also an onset of significant negative magnetoresistance MR. Both T* and the magnitude of MR are however significantly less in a-Gd-Ge than in comparable a-Gd-Si alloys. It is suggested that the large effects of matrix (Ge vs Si) are due to differences in dielectric constant and bandgap, which cause changes in screening, thereby altering the effect of the magnetic moments of Gd on both localization of carriers and on the indirect mediated Gd-Gd exchange interactions. We thank the NSF for support.

  19. Metal-insulator transition in epitaxial perovskite SrIrO3 thin films via strain

    NASA Astrophysics Data System (ADS)

    Gruenewald, J. H.; Terzic, J.; Nichols, J.; Cao, G.; Seo, S. S. A.

    2014-03-01

    Iridates have drawn considerable interest due to their exotic phases arising from the interplay of the strong spin-orbit interaction and the electronic correlation. Here we will discuss our experimental investigations of the electronic properties of epitaxially strained SrIrO3 thin-films. The orthorhombic perovskite crystal phase of SrIrO3 is synthesized as a thin film (~ 20 nm) on various substrates of (LaAlO3)0.3-(Sr2AlTaO6)0.7, SrTiO3, GdScO3, and MgO using pulsed laser deposition. We have observed that when the in-plane lattice parameters are tuned from tensile to compressive strain, the electronic behavior of the strained SrIrO3 thin-films changes from metallic to insulating. All samples have sheet resistance below 13 k Ω/ □, and the insulating samples were fit using the Mott variable-range-hopping equation at low temperatures (< 15 K), which is believed to be the conducing mechanism of Anderson localization at finite temperature. The strain-dependent metal-insulator transition in epitaxial perovskite SrIrO3 thin-films offers an important insight into the electronic structure of these strongly correlated, spin-orbit-coupled materials. This work was supported by grants EPS-0814194, DMR-0856234, DMR-1265162, and KSEF-148-502-12-303.

  20. Metal-insulator transitions in LaTiO3 / CaTiO3 superlattices

    NASA Astrophysics Data System (ADS)

    Seo, Sung Seok A.; Lee, Ho Nyung

    2010-03-01

    Strongly correlated electrons at an interface of complex oxide heterostructures often show interesting behaviors that require an introduction of new physical concepts. For example, the metallic transport behavior found in the superlattices of a Mott insulator LaTiO3 and a band insulator SrTiO3 (STO) has established the concept of interfacial electronic reconstruction. In this work, we have studied the transport property of a new type of Mott/band insulator LaTiO3/CaTiO3 (LTO/CTO) superlattices grown by pulsed laser deposition (PLD). In order to rule out concerns about the PLD plume-triggered oxygen vacancies generated in STO substrates, which might influence transport measurement, and to investigate the effect of epitaxial strain, we have used insulating NdGaO3 substrates. While both LTO and CTO single films are highly insulating, we have observed intriguing metal-insulator transitions (MIT) in the LTO/CTO superlattices depending on the global LTO/CTO thickness ratio and temperature. (Note that LTO/STO superlattices are metallic at all temperatures (2-300 K)). In this talk, we will discuss the origin of the MIT in the scheme of self compensation mechanism of d-electrons at the hetero-interface between LTO and CTO.

  1. Variation of optical conductivity spectra in the course of bandwidth-controlled metal-insulator transitions in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, K.; Fujioka, J.; Tokura, Y.

    2016-06-01

    We spectroscopically investigate a series of pyrochlore iridates R2Ir2O7 (R : rare-earth and Y ions) where the metal-insulator transitions are induced by systematic bandwidth control via chemical substitutions of R ions. We establish the phase diagram of R2Ir2O7 , as endorsed by the variation of the optical conductivity spectra, in which the competing phases including paramagnetic insulator (PI), paramagnetic metal (PM), and antiferromagnetic insulator (AFI) show up as a function of bandwidth and temperature. For small R -ionic radius (R = Y-Sm), i.e., strongly correlated region, pronounced peaks on the edge of the optical gap are discerned below the magnetic transition temperature TN, which is attributable to exciton and magnon sideband absorptions. It turns out that the estimated nearest-neighbor exchange interaction increases as R -ionic radius increases, whereas TN monotonically decreases, indicating that the all-in all-out magnetic order arises from the interplay among several exchange interactions inherent to extended 5 d orbitals on the frustrated lattice. For larger R -ionic radius (R = Sm-Pr), i.e., relatively weakly correlated region, the optical conductivity spectra markedly change below 0.3 eV in the course of PM-AFI transition, implying that the magnetic order induces the insulating state. In particular, we have found distinct electrodynamics in the composition of R =Nd0.5Pr0.5 which is located on the boundary of the quantum PM-AFI transition, pointing to the possible emergence of unconventional topological electronic phases related possibly to the correlated Weyl electrons.

  2. Metallic behavior and metal insulator transition of two-dimensional holes in gallium arsenide

    NASA Astrophysics Data System (ADS)

    Gao, Xuan

    This thesis is an investigation of the anomalous metallic behavior and metal-insulator transition (MIT) of low density two dimensional (2D) holes in gallium arsenide (GaAs) quantum well. The prevailing one parameter scaling theory of localization for disordered 2D Fermi liquids predicts an insulating ground state at zero magnetic field for small rs---the ratio of Coulomb interaction energy over the Fermi energy. On the other hand, metallic-like temperature (T) dependent transport has been observed in various high mobility Fermionic 2D systems with high rs. Exploring the electronic transport of high mobility hole gas in 2D GaAs quantum wells down to 10mKelvin temperature range, we find that weak localization or single particle quantum interference is greatly suppressed in both the temperature dependence of the resistance and the low field magnetoresistance. We observe that a parallel magnetic field B11 applied in the 2D plane does not affect T *, the temperature/energy scale of the metallic resistance drop of the system, although it suppresses the magnitude of the resistance drop. Furthermore, the temperature dependent conductivity of 2D holes in a strong B 11 agrees with the Coulomb interaction theory of a spin polarized Fermi liquid in both the diffusive (T < h/k Btau) and ballistic (T > h/ kBtau) transport regime, with r being the momentum relaxation time. Our transport data are consistent with the phase separation scenario. Driven by the competition between kinetic energy and Coulomb potential energy, the 2D hole liquid phase separates into a mixture of the localized 2D Fermi liquid phase and a metallic phase below T*. The 2D MIT at zero magnetic field in turn could be due to the localized Fermi liquid phase percolates through the metallic phase as disorder strength increases.

  3. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    NASA Astrophysics Data System (ADS)

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-03-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films.

  4. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    PubMed Central

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-01-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films. PMID:26975328

  5. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

    NASA Astrophysics Data System (ADS)

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-08-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture.

  6. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields.

    PubMed

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture.

  7. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

    PubMed Central

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

  8. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields.

    PubMed

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

  9. Electrothermal actuation of metal-insulator transition in SmNiO3 thin film devices above room temperature

    NASA Astrophysics Data System (ADS)

    Ha, Sieu D.; Viswanath, B.; Ramanathan, Shriram

    2012-06-01

    We demonstrate that a metal-insulator phase transition can be electrothermally actuated in the correlated complex oxide SmNiO3 (SNO) above room temperature from current-voltage measurements on thin film two-terminal devices. We simulate the internal temperature of SmNiO3 as a function of applied dc power by a Joule heating mechanism with substrate/electrode dissipation and find good agreement with experiment and device scaling. The results are relevant towards integrating correlated oxide phase transition functionality into semiconductor electronic/optoelectronic platforms.

  10. Metal-insulator transitions and superconductivity in ditetramethyltetraselenafulvalenium flourosulfonate ((TMTSF)/sub 2/FSO/sub 3/)

    SciTech Connect

    Lacoe, R.C.; Wolf, S.A.; Chaikin, P.M.; Wudl, F.; Aharon-Shalom, E.

    1983-02-01

    We have investigated the phase diagram of the organic charge-transfer salt ditetramethyltetraselenafulvalenium flourosulfonate ((TMTSF)/sub 2/FSO/sub 3/) which contains an asymmetric dipolar anion. At low pressures there is a metal-insulator transition related to anion ordering. Between 5 and 6 kbar, there is a dipolar glass phase with increased resistivity. However, thermopower and superconducting measurements indicate that the Fermi surface remains ungapped. Above 5 kbar there is a superconducting transition with T/sub c/>2 K. This is the highest T/sub c/ for this family of compounds and suggests that the anions can enhance T/sub c/.

  11. Magnetic transformations in the organic conductor κ-(BETS)2Mn[N(CN)2]3 at the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Vyaselev, O. M.; Kartsovnik, M. V.; Biberacher, W.; Zorina, L. V.; Kushch, N. D.; Yagubskii, E. B.

    2011-03-01

    A complex study of magnetic properties including dc magnetization, H1 NMR, and magnetic torque measurements has been performed for the organic conductor κ-(BETS)2Mn[N(CN)2]3 which undergoes a metal-insulator transition at TMI≈25K. NMR and the magnetization data indicate a transition in the manganese subsystem from paramagnetic to a frozen state at TMI, which is, however, not a simple Néel type order. Further, a magnetic field induced transition resembling a spin flop has been detected in the torque measurements at temperatures below TMI. This transition is most likely related to the spins of π electrons localized on the organic molecules BETS and coupled with the manganese 3d spins via exchange interaction.

  12. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    SciTech Connect

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  13. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo0.9Ni0.1S1.8

    NASA Astrophysics Data System (ADS)

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-01

    The layered compound BaCo1-xNixS2-y (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (˜40 K) and large volume change (˜0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo1-xNixS2-y (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  14. Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira

    2015-12-01

    The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal-insulator transitions. Metal-insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controlled metal-insulator transitions have been challenging because of the limited number of electrons accumulated by gate dielectrics, or possible electrochemical reaction in ionic liquid gate. Here we achieve a positive-bias gate-controlled metal-insulator transition near the transition temperature. A significant number of electrons were accumulated via a high-permittivity TiO2 gate dielectric with subnanometre equivalent oxide thickness in the inverse-Schottky-gate geometry. An abrupt transition in the VO2 channel is further exploited, leading to a significant current modulation far beyond the capacitive coupling. This solid-state operation enables us to discuss the electrostatic mechanism as well as the collective nature of gate-controlled metal-insulator transitions, paving the pathway for developing functional field effect transistors.

  15. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    NASA Astrophysics Data System (ADS)

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-05-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.

  16. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    PubMed Central

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-01-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices. PMID:27211303

  17. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    PubMed Central

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  18. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    PubMed

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  19. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    NASA Astrophysics Data System (ADS)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-08-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or `Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  20. Metal-insulator transition in variably doped (Bi(1-x)Sb(x))2Se3 nanosheets.

    PubMed

    Lee, Chee Huei; He, Rui; Wang, ZhenHua; Qiu, Richard L J; Kumar, Ajay; Delaney, Conor; Beck, Ben; Kidd, T E; Chancey, C C; Sankaran, R Mohan; Gao, Xuan P A

    2013-05-21

    Topological insulators are novel quantum materials with metallic surface transport but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of a topological insulator Bi2Se3 with variable Sb-doping levels to control the electron carrier density and surface transport behavior. (Bi(1-x)Sb(x))2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ∼4 × 10(13) cm(-2) in pure Bi2Se3 (x = 0) to ∼2 × 10(12) cm(-2) in (Bi(1-x)Sb(x))2Se3 at x ∼ 0.15, while maintaining the metallic transport behavior. At x ≳ ∼0.20, a metal-insulator transition (MIT) is observed, indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of the Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled doping can be a tunable platform for fundamental studies and electronic applications of topological insulator systems. PMID:23563061

  1. Magnetic and Metal-Insulator Transition in natural Transition Metal Sulfides

    NASA Astrophysics Data System (ADS)

    Wang, Renxiong; Metz, Tristin; Liu, I.-Lin; Wang, Kefeng; Wang, Xiangfeng; Jeffries, J. R.; Saha, S. R.; Greene, R. L.; Paglione, J.; Santelli, C. C.; Post, J.,

    In collaboration with the Smithsonian Institution's National Museum of Natural History, we present detailed studies of a class of natural minerals with potential to harbor correlated behavior. Transition metal sulfide minerals, such as Bornite (Cu5FeS4), are an important family of compounds known for their thermoelectric properties. We will present low temperature experimental studies of magnetic transitions and focus on a compound that exhibits a metal to insulator transition concident with entrance to an antiferromagnetic ground state, suggesting a potentially interesting system with promise for realizing new correlated states of matter in a naturally occurring mineral.

  2. Bond formation effects on the metal-insulator transition in the half-filled kagome Hubbard model

    NASA Astrophysics Data System (ADS)

    Higa, Ryota; Asano, Kenichi

    2016-06-01

    We study the metal-insulator transition in the half-filled Hubbard model on a Kagome lattice using the variational cluster approximation. The strong coupling limit of the model corresponds to the S =1 /2 Kagome Heisenberg antiferromagnet, which is known to have a singlet ground state, although its detail is still debated. As the results of the cluster methods generally depend much on the choice of the unit cluster, we have chosen the clusters that are compatible with these singlet ground states in the strong coupling case found so far, which basically consist of even number of sites. It is found that the correlated electrons on the Kagome lattice have a strong tendency to form valence-bond structures, which are the resonation of electrons on a single bond or several bonds forming loops. The zero-temperature metal-insulator transition at some interaction strength is possibly driven by the formation of such short range valence bonds and shows a second order character, which is distinctive from the Brinkman-Rice scenario. The electrons on these valence bonds further localizes onto each site as the interaction increases, and the valence bonds of electrons finally turn into magnetic singlet bonds between localized S =1 /2 spins, which are consistent with the ground states of the Kagome antiferromagnet.

  3. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3 Ru 2 O 7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Zhu, Z. H.; Bohnenbuck, B.; Chuang, Y.-D.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Elfimov, I. S.; Sawatzky, G. A.; Damascelli, A.

    2011-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr 3 (Ru 1-x Mn x)2 O7 , performed at both Ru and Mn L -edges. Resonant magnetic superstructure reflections together with ab-initio density functional theory calculations identify the ground state as a spin checkerboard with blocks of 4 spins up and 4 spins down. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x ~ 0.05 Mn substitution. Perhaps more important, our results suggest that the same checkerboard instability might be present already in the parent compound Sr 3 Ru 2 O7 . In collaboration with: A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley) I. Zegkinoglou, M.W. Haverkort (MPI) J. Geck, D.G. Hawthorn (UBC) R. Mathieu, Y. Tokura, S. Satow, H. Takagi (Tokyo) H.-H. Wu and C. Schussler-Langeheine (Cologne).

  4. Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

    SciTech Connect

    Wangoh, L.; Quackenbush, N. F.; Marley, P. M.; Banerjee, S.; Sallis, S.; Fischer, D. A.; Woicik, J. C.; Piper, L. F. J.

    2014-05-05

    The electronic structure of β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires has been studied with x-ray photoelectron spectroscopy techniques. The recent synthesis of defect-free β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires resulted in the discovery of an abrupt voltage-induced metal insulator transition. First principle calculations predicted an additional V-O-Pb hybridized “in-gap” state unique to this vanadium bronze playing a significant role in facilitating the transition. We confirm the existence, energetic position, and orbital character of the “in-gap” state. Moreover, we reveal that this state is a hybridized Pb 6s–O 2p antibonding lone pair state resulting from the asymmetric coordination of the Pb{sup 2+} ions.

  5. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    PubMed Central

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems. PMID:26783076

  6. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    NASA Astrophysics Data System (ADS)

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems.

  7. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation.

    PubMed

    Yamin, Tony; Strelniker, Yakov M; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems. PMID:26783076

  8. Donor Magneto-Spectroscopy and Magnetic Field - Metal-Insulator Transition in MERCURY(1-X) Cadmium(x)tellurium and Indium Antimonide

    NASA Astrophysics Data System (ADS)

    Choi, Jung Bum

    Far infrared (FIR) magneto-transmission studies of n-type Hg_{1-x}Cd _{x}Te (x = 0.198, 0.204, 0.224, 0.237, 0.270) for temperatures down to 1.5K and magnetic fields up to 9T in Voigt and Faraday geometries have been performed. Magneto-optical transitions of donor bound electrons are observed; including the (000) --> (001) and (010) --> (01k_{z}) in the Voigt geometry, and the (000) --> (110) in the Faraday geometry. These identifications are confirmed by their resonance positions, selection rules, and temperature dependence. The experimental observations are consistent with calculations of resonance positions and lineshapes based on the hydrogenic donor model including central cell effects. This work confirms the donor bound electronic ground state for Hg_{1-x}Cd_{x} Te. The magneto-transport and FIR spectroscopy have been combined to probe the nature of the impurity band in the vicinity of the magnetic field induced metal-insulator transition. The results obtained in Hg_ {1-x}Cd_{x}Te and InSb show the persistance of the (000) --> (110) impurity transition through the metal-insulator critical field. This observation demonstrates the existence of the metallic impurity band which is split off from the conduction band. In the studies of the critical behavior of InSb, the conductivity measured for temperatures down to 0.45K shows a dominant linear dependence on temperature near the transition field. Furthermore, the zero-temperature extrapolated conductivity was found to drop continuously to zero at the transition field with a critical exponent of nu = 1.07 +/- 0.07.

  9. Valence and origin of metal-insulator transition in Mn doped SrRuO{sub 3} studied by electrical transport, X-ray photoelectron spectroscopy and LSDA+U calculation

    SciTech Connect

    Sahu, Ranjan K.; Pandey, Sudhir K.; Pathak, L.C.

    2011-03-15

    We have studied the valence and electronic properties of Mn doped SrRuO{sub 3} using electrical transport measurement, X-ray photoelectron spectroscopy (XPS) and local (spin) density approximation plus Coulomb interaction strength calculation (LSDA+U). The resistivity data revealed that the system undergoes transition from metal to insulator at the critical Mn doping level, x{approx}0.2, which is accompanied by the structural transition from orthorhombic to tetragonal crystal symmetry. Besides, the significant reduction of the spectral weight at the coherent zone (0.8 eV) of the valence band is observed for x>0.2. The core XPS spectra suggest that both the transition elements exist in the mixed ionic pair, Ru{sup +4}/Ru{sup +5{r_reversible}}Mn{sup +3}/Mn{sup +4}. The detail analysis of the results suggests that the Coulomb correlation effect in conjugation with localization of the charge carriers predominate over the mixed ionic pair effect and responsible for the metal-insulator transition in the series. -- Graphical Abstract: XPS data and electrical transport data show that doping of Mn in metallic SrRuO{sub 3} induces mixed ionic pair Ru(IV)/Ru(V){r_reversible}Mn(III)/Mn(IV) and the system undergoes a transition from metal to insulator at the critical Mn doping level, x{approx}0.2. The origin for the metal-insulator transition has been discussed. Display Omitted Research highlights: {yields} We have investigated the electronic properties of SrRu{sub 1-x}Mn{sub x}O{sub 3} spectroscopically, which shows metal-insulator transition at the critical Mn doping concentartion x{approx}0.2. {yields} We report the valence states of Ru and Mn in the series. {yields} We also report the responsible mechanism for the metal-insulator transition in the series.

  10. Covalency, Excitons, Double Counting and the Metal-Insulator Transition in Transition Metal Oxides

    NASA Astrophysics Data System (ADS)

    Wang, Xin

    2012-02-01

    We present single-site dynamical mean-field studies of realistic models of transition metal oxides, including the cuprate superconductors and rare earth nickelates (in bulk and superlattice form). We include orbital multiplet effects and hybridization to ligands. We explicitly calculate the d-d exciton spectra for cuprates, finding sharp exciton lines in both metallic and insulating phases, which should be visible in experiments. We also find that the additional d3z^2-r^2 orbital does not contribute to an additional Fermi surface at any reasonable doping, in contradiction to previous slave-boson studies. The hybridization to ligands is shown to have crucial effects, for example suppressing the ferro-orbital order previously found in Hubbard model studies of nickelates. Hybridization to ligands is shown to be most naturally parametrized by the d-orbital occupancy. For cuprates and nickelates, insulating behavior is found to be present only for a very narrow range of d-occupancy, irrespective of the Coulomb repulsion. The d-occupancy predicted by standard band calculations is found to be very far from the values required to obtain an insulating phase, calling into question the interpretation of these materials as charge transfer insulators. [4pt] This work is done in collaboration with A.J. Millis, M.J. Han, C.A. Marianetti, L. de' Medici, and H.T. Dang, and is supported by NSF-DMR-1006282, the Army Office of Scientific Research, and the Condensed Matter Theory Center and CNAM at University of Maryland. [4pt] [1] X. Wang, H. T. Dang, and A. J. Millis, Phys. Rev. B 84, 014530 (2011).[0pt] [2] X. Wang, M. J. Han, L. de' Medici, C. A. Marianetti, and A. J. Millis, arXiv:1110.2782.[0pt] [3] M. J. Han, X. Wang, C. A. Marianetti, and A. J. Millis, Phys. Rev. Lett. 107, 206804 (2011).

  11. Role of thermal strain in the metal-insulator and structural phase transition of epitaxial VO2 films

    NASA Astrophysics Data System (ADS)

    Théry, V.; Boulle, A.; Crunteanu, A.; Orlianges, J. C.; Beaumont, A.; Mayet, R.; Mennai, A.; Cosset, F.; Bessaudou, A.; Fabert, M.

    2016-05-01

    The metal-insulator switching characteristics of VO2 play a crucial role in the performances of VO2-based devices. In this paper we study high-quality (010)-oriented epitaxial films grown on (001) sapphire substrates by means of electron-beam evaporation and investigate the role of interface defects and thermal strain on the parallel evolution of the metal-insulator transition (MIT) and structural phase transition (SPT) between the monoclinic (insulator) and rutile (metal) phases. It is demonstrated that the highly-mismatched VO2/Al2O3 interface promotes a domain-matching epitaxial growth process where the film grows in a strain-relaxed state and the lattice distortions are confined at the interface in regions with limited spatial extent. Upon cooling down from the growth temperature, tensile strain is stored in the films as a consequence of the thermal expansion mismatch between VO2 and Al2O3 . The thinnest films exhibit the highest level of tensile strain in the interfacial plane resulting in a shift of both the MIT and the SPT temperatures towards higher values, pointing to a stabilization of the monoclinic/insulating phase. Concomitantly, the electrical switching characteristics are altered (lower resistivity ratio and broader transition) as a result of the presence of structural defects located at the interface. The SPT exhibits a similar evolution with, additionally, a broader hysteresis due to the formation of an intermediate, strain-stabilized phase in the M1-R transition. Films with thickness ranging between 100-300 nm undergo a partial strain relaxation and exhibit the best performances, with a sharp (10°C temperature range) and narrow (hysteresis <4°C) MIT extending over more than four orders of magnitude in resistivity (6 ×104 ).

  12. Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

    SciTech Connect

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-11-25

    Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  13. Transferring MBE-grown topological insulator films to arbitrary substrates and metal-insulator transition via Dirac gap.

    PubMed

    Bansal, Namrata; Cho, Myung Rae; Brahlek, Matthew; Koirala, Nikesh; Horibe, Yoichi; Chen, Jing; Wu, Weida; Park, Yun Daniel; Oh, Seongshik

    2014-03-12

    Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only microsized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintaining their pristine morphology and crystallinity. Transport measurements show that these transferred films have lower carrier concentrations and comparable or higher mobilities than before the transfer. Furthermore, using this process we demonstrated a clear metal-insulator transition in an ultrathin Bi2Se3 film by gate-tuning its Fermi level into the hybridization gap formed at the Dirac point. The ability to transfer large area TI films to any substrate will facilitate fabrication of TI heterostructure devices, which will help explore exotic phenomena such as Majorana fermions and topological magnetoelectricity.

  14. Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film

    NASA Astrophysics Data System (ADS)

    Fan, L. L.; Chen, S.; Liao, G. M.; Chen, Y. L.; Ren, H.; Zou, C. W.

    2016-06-01

    As a typical strong correlation material, vanadium dioxide (VO2) has attracted wide interest due to its particular metal-insulator transition (MIT) property. However, the relatively high critical temperature (T c) of ~68 °C seriously hinders its practical applications. Thus modulating the phase transition process and decreasing the T c close to room temperature have been hot topics for VO2 study. In the current work, we conducted a multi-approach strategy to control the phase transition of VO2 films, including the interfacial tensile/compressive strain and oxygen vacancies. A synchrotron radiation reciprocal space mapping technique was used to directly record the interfacial strain evolution and variations of lattice parameters. The effects of interfacial strain and oxygen vacancies in the MIT process were systematically investigated based on band structure and d-orbital electron occupation. It was suggested that the MIT behavior can be modulated through the combined effects of the interfacial strain and oxygen vacancies, achieving the distinct phase transition close to room temperature. The current findings not only provide better understanding for strain engineering and oxygen vacancies controlling phase transition behavior, but also supply a combined way to control the phase transition of VO2 film, which is essential for VO2 film based device applications in the future.

  15. Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film.

    PubMed

    Fan, L L; Chen, S; Liao, G M; Chen, Y L; Ren, H; Zou, C W

    2016-06-29

    As a typical strong correlation material, vanadium dioxide (VO2) has attracted wide interest due to its particular metal-insulator transition (MIT) property. However, the relatively high critical temperature (T c) of ~68 °C seriously hinders its practical applications. Thus modulating the phase transition process and decreasing the T c close to room temperature have been hot topics for VO2 study. In the current work, we conducted a multi-approach strategy to control the phase transition of VO2 films, including the interfacial tensile/compressive strain and oxygen vacancies. A synchrotron radiation reciprocal space mapping technique was used to directly record the interfacial strain evolution and variations of lattice parameters. The effects of interfacial strain and oxygen vacancies in the MIT process were systematically investigated based on band structure and d-orbital electron occupation. It was suggested that the MIT behavior can be modulated through the combined effects of the interfacial strain and oxygen vacancies, achieving the distinct phase transition close to room temperature. The current findings not only provide better understanding for strain engineering and oxygen vacancies controlling phase transition behavior, but also supply a combined way to control the phase transition of VO2 film, which is essential for VO2 film based device applications in the future.

  16. Resistance noise spectroscopy across the thermally and electrically driven metal-insulator transitions in VO2 nanobeams

    NASA Astrophysics Data System (ADS)

    Alsaqqa, Ali; Kilcoyne, Colin; Singh, Sujay; Horrocks, Gregory; Marley, Peter; Banerjee, Sarbajit; Sambandamurthy, G.

    Vanadium dioxide (VO2) is a strongly correlated material that exhibits a sharp thermally driven metal-insulator transition at Tc ~ 340 K. The transition can also be triggered by a DC voltage in the insulating phase with a threshold (Vth) behavior. The mechanisms behind these transitions are hotly discussed and resistance noise spectroscopy is a suitable tool to delineate different transport mechanisms in correlated systems. We present results from a systematic study of the low frequency (1 mHz < f < 10 Hz) noise behavior in VO2 nanobeams across the thermally and electrically driven transitions. In the thermal transition, the power spectral density (PSD) of the resistance noise is unchanged as we approach Tc from 300 K and an abrupt drop in the magnitude is seen above Tc and it remains unchanged till 400 K. However, the noise behavior in the electrically driven case is distinctly different: as the voltage is ramped from zero, the PSD gradually increases by an order of magnitude before reaching Vth and an abrupt increase is seen at Vth. The noise magnitude decreases above Vth, approaching the V = 0 value. The individual roles of percolation, Joule heating and signatures of correlated behavior will be discussed. This work is supported by NSF DMR 0847324.

  17. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).

    PubMed

    Martens, K; Jeong, J W; Aetukuri, N; Rettner, C; Shukla, N; Freeman, E; Esfahani, D N; Peeters, F M; Topuria, T; Rice, P M; Volodin, A; Douhard, B; Vandervorst, W; Samant, M G; Datta, S; Parkin, S S P

    2015-11-01

    The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13)  cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3)  cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2). PMID:26588400

  18. Confocal Raman microscopy across the metal-insulator transition of single vanadium dioxide nanoparticles.

    PubMed

    Donev, Eugenii U; Lopez, Rene; Feldman, Leonard C; Haglund, Richard F

    2009-02-01

    We present the first Raman scattering measurements on nanoparticulate vanadium dioxide (VO(2)), as well as the first observations of the temperature-induced phase transition in individual VO(2) nanoparticles (NPs). We compare the Raman response of two VO(2) NPs and a companion VO(2) film undergoing their monoclinic-tetragonal-monoclinic transformations and offer qualitative explanations for the large observed differences in hysteresis width. While bulk crystals and contiguous films contain numerous nucleation sites, individual NPs likely harbor only a few, which may make it possible to correlate detectable defects (e.g., grain boundaries and dislocations) with the "ease" of switching phases, as quantified by the width of the thermal hysteresis.

  19. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    NASA Astrophysics Data System (ADS)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  20. Linear-in-temperature resistivity close to a topological metal insulator transition in ultra-multi valley fcc-ytterbium

    NASA Astrophysics Data System (ADS)

    Enderlein, Carsten; Fontes, Magda; Baggio-Saitovich, Elisa; Continentino, Mucio A.

    2016-01-01

    The semimetal-to-semiconductor transition in fcc-Yb under modest pressure can be considered a picture book example of a metal-insulator transition of the Lifshitz type. We have performed transport measurements at low temperatures in the closest vicinity of the transition and related DFT calculations of the Fermi surface. Our resistivity measurements show a linear temperature dependence with an unusually low dρ / dT at low temperatures approaching the MIT. The calculations suggest fcc-ytterbium being an ultra-multi valley system with 24 electron and 6 hole pockets in the Brillouin zone. Such Fermi surface topology naturally supports the appearance of strongly correlated phases. An estimation of the quasiparticle-enhanced effective mass shows that the scattering rate is by at least two orders of magnitude lower than in other materials which exhibit linear-in-T behavior at a quantum critical point. However, we cannot exclude an excessive effective mass enhancement, when the van Hove singularity touches the Fermi level.

  1. Giant oxygen isotope effect on the metal-insulator transition of RNiO{sub 3} perovskites

    SciTech Connect

    Medarde, M.; Fauth, F.; Furrer, A.; Lacorre, P.; Conder, K.

    1998-08-01

    The metal to insulator transition displayed by all the members of the perovskite family RNiO{sub 3} (R = 4f rare earth different from La) has attracted a lot of interest since it constitutes one of the few examples of this phenomenon in perfectly stoichiometric compounds. In spite of the great deal of work performed during the last six years, the mechanism responsible for the electronic localization is still a matter of controversy. The observation of unusually large O isotope shifts on the metal-insulator temperature T{sub MI} reported in this study represents an important advance since it clearly proves the dominant role of the electron lattice interaction as driving force for the transition. Moreover, the good agreement between this observation and a simple model based on the existence of Jahn-Teller polarons in the metallic state gives further qualitative and quantitative support to the polaronic picture recently suggested to account for O isotope effects in other 3d transition metal oxides containing Jahn-Teller ions.

  2. Strain controlled systematic variation of metal-insulator transition in epitaxial NdNiO{sub 3} thin films

    SciTech Connect

    Kumar, Yogesh; Choudhary, R. J.; Kumar, Ravi

    2012-10-01

    We report here the strain dependent structural and electrical transport properties of epitaxial NdNiO{sub 3} thin films. Pulsed laser deposition technique was used to grow the NdNiO{sub 3} thin films on c-axis oriented SrTiO{sub 3} single crystals. Deposited films were irradiated using 200 MeV Ag{sup 15+} ion beam at the varying fluence (1 Multiplication-Sign 10{sup 11}, 5 Multiplication-Sign 10{sup 11}, and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2}). X-ray diffraction studies confirm the epitaxial growth of the deposited films, which is maintained even up to the highest fluence. Rise in the in-plane compressive strain has been observed after the irradiation. All the films exhibit metal-insulator transition, however, a systematic decrease in the transition temperature (T{sub MI}) has been observed after irradiation, which may be attributed to the increase in the in-plane compression. Raman spectroscopy data reveal that this reduction in T{sub MI}, with the irradiation, is related to the decrease in band gap due to the stress generated by the in-plane compressive strain.

  3. Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device

    NASA Astrophysics Data System (ADS)

    Khan, Abdul Karim; Lee, Byoung Hun

    2016-09-01

    Memcapacitor model based on its one possible physical realization is developed and simulated in order to know its limitation before making a real device. The proposed device structure consists of vertically stacked dielectric layer and MoS2 monolayer between two external metal plates. The Metal Insulator Transition (MIT) phenomenon of MoS2 monolayer is represented in terms of percolation probabilty which is used as the system state. Cluster based site percolation theory is used to mimic the MIT of MoS2 which shows slight discontinuous change in MoS2 monolayer conductivity. The metal to insulator transition switches the capacitance of the device in hysterical way. An Ioffe Regel criterion is used to determine the MIT state of MoS2 monolayer. A good control of MIT time in the range of psec is also achieved by changing a single parameter in the model. The model shows memcapacitive behavior with an edge of fast switching (in psec range) over the previous general models. The model is then extended into vertical cascaded version which behaves like a ternary device instead of binary.

  4. Metal-insulator transition in Nd1-xEuxNiO3: Entropy change and electronic delocalization

    NASA Astrophysics Data System (ADS)

    Jardim, R. F.; Barbeta, V. B.; Andrade, S.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-01

    The metal-insulator (MI) phase transition in Nd1-xEuxNiO3, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat CP(T). The MI transition temperature (TMI) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dTMI/dP were found: (i) for x ≤ 0.15, dTMI/dP is nearly constant and ˜-4.3 K/kbar; (ii) for x ≥ 0.15, dTMI/dP increases with x and it seems to reach a saturation value ˜-6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of TMI. The entropy change (ΔS) at TMI for the sample x = 0, estimated by using the dTMI/dP data and the Clausius-Clapeyron equation, resulted in ΔS ˜ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔSM ˜ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and CP(T) data indicates that the entropy change at TMI is mainly due to the electronic delocalization and not related to the AF transition.

  5. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    NASA Astrophysics Data System (ADS)

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  6. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures.

    PubMed

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut Pb(Mg(1/3)Nb(2/3)O3-(PbTiO3) (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  7. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    PubMed Central

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  8. Heteroepitaxial VO{sub 2} thin films on GaN: Structure and metal-insulator transition characteristics

    SciTech Connect

    Zhou You; Ramanathan, Shriram

    2012-10-01

    Monolithic integration of correlated oxide and nitride semiconductors may open up new opportunities in solid-state electronics and opto-electronics that combine desirable functional properties of both classes of materials. Here, we report on epitaxial growth and phase transition-related electrical properties of vanadium dioxide (VO{sub 2}) thin films on GaN epitaxial layers on c-sapphire. The epitaxial relation is determined to be (010){sub vo{sub 2}} parallel (0001){sub GaN} parallel (0001){sub A1{sub 2O{sub 3}}} and [100]{sub vo{sub 2}} parallel [1210]{sub GaN} parallel [0110]{sub A1{sub 2O{sub 3}}} from x-ray diffraction. VO{sub 2} heteroepitaxial growth and lattice mismatch are analyzed by comparing the GaN basal plane (0001) with the almost close packed corrugated oxygen plane in vanadium dioxide and an experimental stereographic projection describing the orientation relationship is established. X-ray photoelectron spectroscopy suggests a slightly oxygen rich composition at the surface, while Raman scattering measurements suggests that the quality of GaN layer is not significantly degraded by the high-temperature deposition of VO{sub 2}. Electrical characterization of VO{sub 2} films on GaN indicates that the resistance changes by about four orders of magnitude upon heating, similar to epitaxial VO{sub 2} films grown directly on c-sapphire. It is shown that the metal-insulator transition could also be voltage-triggered at room temperature and the transition threshold voltage scaling variation with temperature is analyzed in the framework of a current-driven Joule heating model. The ability to synthesize high quality correlated oxide films on GaN with sharp phase transition could enable new directions in semiconductor-photonic integrated devices.

  9. Growth temperature-dependent metal-insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals

    NASA Astrophysics Data System (ADS)

    Wang, Liangxin; Yang, Yuanjun; Zhao, Jiangtao; Hong, Bin; Hu, Kai; Peng, Jinlan; Zhang, Haibin; Wen, Xiaolei; Luo, Zhenlin; Li, Xiaoguang; Gao, Chen

    2016-04-01

    Vanadium dioxide (VO2) epitaxial films were grown on perovskite single-crystal strontium titanate (SrTiO3) substrates by reactive radio-frequency magnetron sputtering. The growth temperature-dependent metal-insulator transition (MIT) behavior of the VO2 epitaxial films was then investigated. We found that the order of magnitude of resistance change across the MIT increased from 102 to 104 with increasing growth temperature. In contrast, the temperature of the MIT does not strongly depend on the growth temperature and is fairly stable at about 345 K. On one hand, the increasing magnitude of the MIT is attributed to the better crystallinity and thus larger grain size in the (010)-VO2/(111)-SrTiO3 epitaxial films at elevated temperature. On the other hand, the strain states do not change in the VO2 films deposited at various temperatures, resulting in stable V-V chains and V-O bonds in the VO2 epitaxial films. The accompanied orbital occupancy near the Fermi level is also constant and thus the MIT temperatures of VO2 films deposited at various temperatures are nearly the same. This work demonstrates that high-quality VO2 can be grown on perovskite substrates, showing potential for integration into oxide heterostructures and superlattices.

  10. Magnetic and transport properties of amorphous GdxGe1-x alloys near the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Helgren, E.; Hellman, F.; Zeng, Li; Sinenian, N.; Islam, R.; Smith, David J.

    2007-11-01

    The temperature and field dependence of magnetization and conductivity of amorphous Ge doped with Gd (a-GdxGe1-x) has been measured for a wide range of x (0.08metal-insulator transition. Magnetization and magnetic susceptibility measurements show strong magnetic interactions and a low temperature spin-glass freezing. High field magnetization and susceptibility per Gd atom in the paramagnetic state are significantly suppressed below that of noninteracting Gd, as observed previously for a-Gd-Si alloys. However, unlike a-Gd-Si , the low field susceptibility does not fit a Curie-Weiss law and shows no significant dependence on composition. Conductivity measurements show that Gd causes localization of charge carriers below a characteristic temperature T* , which also marks the onset of significant negative magnetoresistance. Both T* and the magnitude of the MR are significantly lower in a-Gd-Ge than in comparable a-Gd-Si alloys. It is proposed that the large effects of the host matrix (Ge vs Si) are due to differences in both the band gap and dielectric constant, which cause changes in screening, thereby altering the effect of Gd magnetic moments on the localization of carriers and on the indirect mediated Gd-Gd exchange interactions.

  11. Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

    NASA Astrophysics Data System (ADS)

    Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

    2016-06-01

    We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal-insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

  12. Disordered RuO2 exhibits two dimensional, low-mobility transport and a metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Krowne, C. M.; Charipar, K. M.; Bussmann, K.; Chervin, C. N.; Pala, I. R.; Rolison, D. R.

    2016-02-01

    The discovery of low-dimensional metallic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors, and conducting oxide interfaces (e.g., LaAlO3/SrTiO3) has stimulated research into the nature of electronic transport in two-dimensional systems given that the seminal theory for transport in disordered metals predicts that the metallic state cannot exist in two dimensions (2D). In this report, we demonstrate the existence of a metal-insulator transition (MIT) in highly disordered RuO2 nanoskins with carrier concentrations that are one-to-six orders of magnitude higher and with mobilities that are one-to-six orders of magnitude lower than those reported previously for 2D oxides. The presence of an MIT and the accompanying atypical electronic characteristics place this form of the oxide in a highly diffusive, strong disorder regime and establishes the existence of a metallic state in 2D that is analogous to the three-dimensional case.

  13. Competing exchange interactions on the verge of a metal-insulator transition in the two-dimensional spiral magnet Sr3Fe2O7.

    PubMed

    Kim, J-H; Jain, Anil; Reehuis, M; Khaliullin, G; Peets, D C; Ulrich, C; Park, J T; Faulhaber, E; Hoser, A; Walker, H C; Adroja, D T; Walters, A C; Inosov, D S; Maljuk, A; Keimer, B

    2014-10-01

    We report a neutron scattering study of the magnetic order and dynamics of the bilayer perovskite Sr(3)Fe(2)O(7), which exhibits a temperature-driven metal-insulator transition at 340 K. We show that the Fe(4+) moments adopt incommensurate spiral order below T(N) = 115 K and provide a comprehensive description of the corresponding spin-wave excitations. The observed magnetic order and excitation spectra can be well understood in terms of an effective spin Hamiltonian with interactions ranging up to third-nearest-neighbor pairs. The results indicate that the helical magnetism in Sr(3)Fe(2)O(7) results from competition between ferromagnetic double-exchange and antiferromagnetic superexchange interactions whose strengths become comparable near the metal-insulator transition. They thus confirm a decades-old theoretical prediction and provide a firm experimental basis for models of magnetic correlations in strongly correlated metals. PMID:25325658

  14. Electronic properties and the nature of metal-insulator transition in NdNiO3 prepared at ambient oxygen pressure

    NASA Astrophysics Data System (ADS)

    Hooda, M. K.; Yadav, C. S.

    2016-06-01

    We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to the NdNiO3 prepared at high oxygen pressure. The electric resistivity, Seebeck coefficient and thermal conductivity of the compound show large hysteresis below the metal-insulator transition. The large value of the effective mass (m*~8me) in the metallic state indicates the narrow character of the 3d band. The electric conduction at low temperatures (T=2-20 K) is governed by the variable range hopping of the charge carriers.

  15. Electric field-assisted metal insulator transition in vanadium dioxide (VO2) thin films: optical switching behavior and anomalous far-infrared emissivity variation

    NASA Astrophysics Data System (ADS)

    Crunteanu, Aurelian; Fabert, Marc; Cornette, Julie; Colas, Maggy; Orlianges, Jean-Christophe; Bessaudou, Annie; Cosset, Françoise

    2014-03-01

    We present the vanadium dioxide (VO2) thin films deposition using e-beam evaporation of a vanadium target under oxygen atmosphere on different substrates (sapphire, Si, SiO2/Si…) and we focus on their electrical and optical properties variations as the material undergoes a metal-insulator transition under thermal and electrical stimuli. The phase transition induces extremely abrupt changes in the electronic and optical properties of the material: the electrical resistivity increases up to 5 orders of magnitude while the optical properties (transmission, reflection, refractive index) are drastically modified. We present the integration of these films in simple planar optical devices and we demonstrate electrical-activated optical modulators for visible-infrared signals with high discrimination between the two states. We will highlight a peculiar behavior of the VO2 material in the infrared and far infrared regions (2- 20 μm), namely its anomalous emissivity change under thermal- end electrical activation (negative differential emittance phenomenon) with potential applications in active coatings for thermal regulation, optical limiting or camouflage coatings.

  16. A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

    PubMed Central

    Lee, Hong Sub; Choi, Sun Gyu; Park, Hyung-Ho; Rozenberg, M. J.

    2013-01-01

    Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr0.7Ca0.3MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.

  17. Compositionally controlled metal-insulator transition in Tl{sub 2-x}In{sub x}TeO{sub 6}

    SciTech Connect

    Siritanon, Theeranun; Sleight, A.W.; Subramanian, M.A.

    2011-04-15

    Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} are both known to crystallize in the Na{sub 2}SiF{sub 6}-type structure. We find Tl{sub 2}TeO{sub 6} is metallic, whereas In{sub 2}TeO{sub 6} is an insulator. We have prepared a complete Tl{sub 2-x}In{sub x}TeO{sub 6} series in a search for a compositionally controlled metal-insulator transition that might be expected if a complete solid solution can be obtained. Unit cell edges and volume vary monotonically with no indication of a miscibility gap. The metal-insulator transition occurs at an x value of about 1.4, which can be rationalized on a percolation model. No superconductivity could be detected down to 5 K. -- Graphical abstract: A complete solid solution between Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} is formed. A compositionally controlled metal-insulator transition occurs in Tl{sub 2-x}In{sub x}TeO{sub 6} at an x value of about 1.5. No superconductivity could be detected down to 5 K. Display Omitted Research highlights: {yields} A complete solid solution between Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} is formed. {yields} A compositionally controlled metal-insulator transition occurs in Tl{sub 2-x}In{sub x}TeO{sub 6} at an x value of about 1.5, which can be rationalized on a percolation model. {yields} No superconductivity could be detected down to 5 K.

  18. Metal-Insulator Transition in VO_{2}: A DFT+DMFT Perspective.

    PubMed

    Brito, W H; Aguiar, M C O; Haule, K; Kotliar, G

    2016-07-29

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M_{1} and M_{2} monoclinic (insulating) phases of VO_{2} employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO_{2}, and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO_{2}: undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M_{2} phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M_{1} phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M_{1} phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments. PMID:27517782

  19. Metal-Insulator Transition in VO2 : A DFT +DMFT Perspective

    NASA Astrophysics Data System (ADS)

    Brito, W. H.; Aguiar, M. C. O.; Haule, K.; Kotliar, G.

    2016-07-01

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M1 and M2 monoclinic (insulating) phases of VO2 employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO2 , and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO2 : undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M2 phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M1 phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M1 phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments.

  20. Universal role of quantum uncertainty in Anderson metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Cheng, W. W.; Zhang, Z. J.; Gong, L. Y.; Zhao, S. M.

    2016-07-01

    We explore quantum uncertainty, based on Wigner-Yanase skew information, in various one-dimensional single-electron wave functions. For the power-law function and eigenfunctions in the Aubry-André model, the electronic localization properties are well-defined. For them, we find that quantum uncertainty is relatively small and large for delocalized and localized states, respectively. And around the transition points, the first-order derivative of the quantum uncertainty exhibits singular behavior. All these characters can be used as signatures of the transition from a delocalized phase to a localized one. With this criterion, we also study the quantum uncertainty in one-dimensional disorder system with long-range correlated potential. The results show that the first-order derivative of spectrum-averaged quantum uncertainty is minimal at a certain correlation exponent αm for a finite system, and has perfect finite-size scaling behaviors around αm. By extrapolating αm, the threshold value αc ≃ 1.56 ± 0.02 is obtained for the infinite system. Thus we give another perspective and propose a consistent interpretation for the discrepancies about localization property in the long-range correlated potential model. These results suggest that the quantum uncertainty can provide us with a new physical intuition to the localization transition in these models.

  1. Disproportionation, Metal-Insulator Transition, and Critical Interaction Strength in Na1/2CoO2

    NASA Astrophysics Data System (ADS)

    Kunes, Jan

    2006-03-01

    Spontaneous breaking of symmetry is one of the key concepts of solid state physics related to phase transitions. Charge/spin density wave, or charge/spin ordering if the propagation vector is commensurate, are notorious examples of broken symmetry. The charge disproportionation in Na0.5CoO2 is the main theme of the present work. The results of LDA+U calculations will be presented, exhibiting a charge disproportionation transition at U 3eV. NaxCoO2 attracted considerable attention mainly due to superconductivity of its hydrated form Na0.3CoO2.1.3H2O [1]. Besides the superconductivity NaxCoO2 exhibits several intriguing properties throughout its phase diagram, such crossover from Pauli-like to Curie-Weiss susceptibility at x=0.5, spin-density wave around x=0.7 or several phase transitions for x=0.5 including metal-insulator transition, charge ordering and magnetic ordering [2]. The NaxCoO2 lattice consists of triangular CoO2 layers separated by Na layer. The mobility of Na ions and fractional occupation of Na sublattice provides an additional complication. Using LDA+U functional within FPLO [3] bandstructure method we have performed series of supercell calculations allowing for breaking of the symmetry between different Co sites. We have found that for large enough, but physically realistic, values of the on-site Coulomb interaction U the Co sublattice disproportionates into sites with formal valencies Co^4+ and Co^3+. We have found that at the same time a gap opens in the excitation spectrum. Details of the bandstructure across the transition as well as the driving forces of the transition in the LDA+U mean field picture will be discussed. [1] K. Takada et al., Nature (London) 422, 53 (2003).[2] M. L. Foo et al., Phys. Rev. Lett. 92, 247001 (2004).[3] K. Koepernik and H. Eschrig, Phys. Rev. B 59, 1743 (1999).

  2. Structurally-driven metal-insulator transition in Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} (0{<=}x<0.14): A single crystal X-ray diffraction study

    SciTech Connect

    Qi, T.F.; Ge, M.; Korneta, O.B.; Parkin, S.; De Long, L.E.; Cao, G.

    2011-04-15

    Correlation between structure and transport properties are investigated in high-quality single-crystals of Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} with 0metal-insulator (MI) transition at 357 K. Upon chromium doping on the ruthenium site, the metal-insulator transition temperature (T{sub MI}) was drastically reduced, and is related to the competition between structural changes that occur upon Cr doping and with decreasing temperature. A strong suppression of structural distortions with increasing Cr substitution was identified. No clear T{sub MI} can be observed when x>13.5% and the system behaves as an insulator. Such a large, sharp metal-insulator transition and tuneable transition temperature may have potential applications in electronic devices. -- Graphical abstract: The metal-insulator transition temperature (T{sub MI}) was drastically reduced by Cr doping, and is closely related to the distortion of structure. Display Omitted Research highlights: {yields} The metal-insulator transition temperature (T{sub MI}) was drastically reduced by doping Cr into Ca{sub 2}RuO{sub 4} single crystal. {yields} Detailed single crystal structural analysis provided important insight into this structurally-driven metal-insulator transition. {yields} Negative Volume Thermal Expansion (NVTE) was observed with increasing temperature.

  3. Metal-insulator transitions in two dimensions at zero magnetic field in a p-type gallium arsenide heterostructure

    NASA Astrophysics Data System (ADS)

    Dultz, Shane Cole

    Presented in this work is a comparative study of two different two dimensional systems in GaAs heterostructures. In the two dimensional hole system, electron-electron interactions are strong and possibly the reason for an anomolous temperature dependence in the resistivity that is reminiscent of metallic behavior which is known not to exist in a non-interacting two dimensional Fermi gas. The other system is an electron system where interactions are much weaker and whose properties have been understood in the context of Fermi liquid theory. In the first set of experiments, the delocalized states of the two dimensional hole system in a p-type GaAs heterostructure are tracked in density-magnetic field parameter space to find qualitatively very different behavior from what is found in the weakly interacting electron system. The lowest delocalized state which corresponds to the lowest Landau level in high magnetic fields, is found to float up in energy as the magnetic field is reduced to zero for the electron system. We found that there is an absence of this floating for the hole system and discuss this in the context of the recently discovered metal-insulator transition at B = 0. We further investigate the high temperature properties of the hole system by analyzing the resistivity to temperatures as high as 120 K to see how well the strongly interacting hole system fits what is expected from acoustic and optical phonon scattering. This is done over a wide range of densities and temperatures so that we could understand what sort of temperature dependence is truly considered anomolous in low temperatures. Finally, the compressibility of both systems is studied. An unequivocal signature for a phase transition is found in the compressibility measurements for the hole system with a temperature independent crossing point in the resistance of the gas occurring at the minimum of the inverse compressibility signal as a function of density (disorder). Differences in the way the

  4. Tuning near field radiative heat flux through surface excitations with a metal insulator transition.

    PubMed

    van Zwol, P J; Ranno, L; Chevrier, J

    2012-06-01

    The control of heat flow is a formidable challenge due to lack of good thermal insulators. Promising new opportunities for heat flow control were recently theoretically discovered for radiative heat flow in near field, where large heat flow contrasts may be achieved by tuning electronic excitations on surfaces. Here we show experimentally that the phase transition of VO2 entails a change of surface polariton states that significantly affects radiative heat transfer in near field. In all cases the Derjaguin approximation correctly predicted radiative heat transfer in near field, but it underestimated the far field limit. Our results indicate that heat flow contrasts can be realized in near field that can be larger than those obtained in far field. PMID:23003960

  5. Volume-based considerations for the metal-insulator transition of CMR oxides

    SciTech Connect

    Neumeier, J.J. |; Hundley, M.F.; Cornelius, A.L.; Andres, K.

    1998-03-01

    The sensitivity of {rho} [electrical resistivity] to changes in volume which occur through: (1) applied pressure, (2) variations in temperature, and (3) phase transitions, is evaluated for some selected CMR oxides. It is argued that the changes in volume associated with phase changes are large enough to produce self pressures in the range of 0.18 to 0.45 GPa. The extreme sensitivity of the electrical resistivity to pressure indicates that these self pressures are responsible for large features in the electrical resistivity and are an important component for occurrence the metallicity below {Tc}. It is suggested that this is related to a strong volume dependence of the electron phonon coupling in the CMR oxides.

  6. Exotic topological states near a quantum metal-insulator transition in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Tian, Zhaoming

    Pyrochlore iridates have attracted great interest as prime candidates that may host topologically nontrivial states, spin ice ordering and quantum spin liquid states, in particular through the interplay between different degrees of freedom, such as local moments and mobile electrons. Based on our extensive study using our high quality single crystals, we will discuss such examples, i.e. chiral spin liquid in a quadratic band touching state, Weyl semimetallic state and chiral domain wall transport nearby a quantum insulator-semimetal transition in pyrochlore iridates. This work is based on the collaboration with Nakatsuji Satoru, Kohama Yoshimitsu, Tomita Takahiro, Kindo Koichi, Jun J. Ishikawa, Balents Leon, Ishizuka Hiroaki, Timothy H. Hsieh. ZM. Tian was supported by JSPS Postdoctoral Fellowship (No.P1402).

  7. Three-dimensional electronic structures and the metal-insulator transition in Ruddlesden-Popper iridates

    NASA Astrophysics Data System (ADS)

    Yamasaki, A.; Fujiwara, H.; Tachibana, S.; Iwasaki, D.; Higashino, Y.; Yoshimi, C.; Nakagawa, K.; Nakatani, Y.; Yamagami, K.; Aratani, H.; Kirilmaz, O.; Sing, M.; Claessen, R.; Watanabe, H.; Shirakawa, T.; Yunoki, S.; Naitoh, A.; Takase, K.; Matsuno, J.; Takagi, H.; Sekiyama, A.; Saitoh, Y.

    2016-09-01

    In this study, we systematically investigate three-dimensional (3D) momentum (ℏ k )-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Srn +1IrnO3 n +1 using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO2-plane structure. This transition occurs when the spin-orbit-coupled jeff=1 /2 band changes its behavior in the dispersion relation and moves across the Fermi energy. In addition, an emerging band along the Γ (0,0,0)-R (π ,π ,π ) direction is found to play a crucial role in the metallic characteristics of SrIrO3. By scanning the photon energy over 350 eV, we reveal the 3D Fermi surface in SrIrO3 and kz-dependent oscillations of photoelectron intensity in Sr3Ir2O7 . In contrast to previously reported results obtained using low-energy photons, folded bands derived from lattice distortions and/or magnetic ordering make significantly weak (but finite) contributions to the k -resolved photoemission spectrum. At the first glance, this leads to the ambiguous result that the observed k -space topology is consistent with the unfolded Brillouin zone (BZ) picture derived from a nonrealistic simple square or cubic Ir lattice. Through careful analysis, we determine that a superposition of the folded and unfolded band structures has been observed in the ARPES spectra obtained using photons in both ultraviolet and SX regions. To corroborate the physics deduced using low-energy ARPES studies, we propose to utilize SX-ARPES as a powerful complementary technique, as this method surveys more than one whole BZ and provides a panoramic view of electronic structures.

  8. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    SciTech Connect

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-07

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  9. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    NASA Astrophysics Data System (ADS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  10. Ferromagnetic-nonmagnetic and metal-insulator phase transitions at the interfaces of KTaO{sub 3} and PbTiO{sub 3}

    SciTech Connect

    Yang, Yi; Chen, Jin-Feng; Hu, Lei; Lin, Chen-Sheng; Cheng, Wen-Dan

    2014-10-21

    We studied the electronic and magnetic properties of hole doped KTaO{sub 3}/PbTiO{sub 3} interface using density functional theory methods. Ferromagnetic-nonmagnetic phase transition and metal-insulator phase transition occur simultaneously at the interface with ferroelectric polarization reversal. Furthermore, these two transitions are coupled with each other because hole doping with large concentration of holes gives rise to ferromagnetism. The interfacial magnetization, which is proportional to hole concentration at the interface, can be tuned by ferroelectric polarization, leading to strong intrinsic magnetoelectric effect at the interface of originally nonmagnetic KTaO{sub 3} and PbTiO{sub 3}.

  11. Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well.

    SciTech Connect

    Schaffler, F.; Muhlberger, M.; Lai, K. W.; Lyon, S.A.; Tsui, Daniel Chee; Pan, W. Y.

    2005-01-01

    The apparent metal-insulator transition is observed in a high-quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si{sub 1-x}Ge{sub x} heterostructure with mobility {mu} = 1.9 x 10{sup 5} cm{sup 2}/V s at density n = 1.45 x 10{sup 11} cm{sup -2}. The critical density, at which the thermal coefficient of low T resistivity changes sign, is -0.32 x 10{sup 11} cm{sup -2}, a very low value obtained in Si-based 2D systems. The in-plane magnetoresistivity {rho}(B{sub ip}) was measured in the density range, 0.35 x 10{sup 11} < n < 1.45 x 10{sup 11} cm{sup -2}, where the 2DES shows the metallic-like behavior. It first increases and then saturates to a finite value {rho}(B{sub c}) for B{sub ip}>B{sub c} , with B{sub c} the full spin-polarization field. Surprisingly, {rho}(B{sub c})/{rho}(0)-1.8 for all the densities, even down to n = 0.35 x 10{sup 11} cm{sup -2}, only 10% higher than n{sub c}. This is different from that in clean Si metal-oxide-semiconductor field-effect transistors, where the enhancement is strongly density dependent and {rho}(B{sub c})/{rho}(0) appears to diverge as n {yields} n{sub c}. Finally, we show that in the fully spin-polarized regime, dependent on the 2DES density, the temperature dependence of {rho}(B{sub ip}) can be either metallic-like or insulating.

  12. Ultracold fermions in a one-dimensional bipartite optical lattice: Metal-insulator transitions driven by shaking

    NASA Astrophysics Data System (ADS)

    Di Liberto, M.; Malpetti, D.; Japaridze, G. I.; Morais Smith, C.

    2014-08-01

    We theoretically investigate the behavior of a system of fermionic atoms loaded in a bipartite one-dimensional optical lattice that is under the action of an external time-periodic driving force. By using Floquet theory, an effective model is derived. The bare hopping coefficients are renormalized by zeroth-order Bessel functions of the first kind with different arguments for the nearest-neighbor and next-nearest-neighbor hopping. The insulating behavior characterizing the system at half filling in the absence of driving is dynamically suppressed, and for particular values of the driving parameter the system becomes either a standard metal or an unconventional metal with four Fermi points. The existence of the four-Fermi-point metal relies on the fact that, as a consequence of the shaking procedure, the next-nearest-neighbor hopping coefficients become significant compared to the nearest-neighbor ones. We use the bosonization technique to investigate the effect of on-site Hubbard interactions on the four-Fermi-point metal-insulator phase transition. Attractive interactions are expected to enlarge the regime of parameters where the unconventional metallic phase arises, whereas repulsive interactions reduce it. This metallic phase is known to be a Luther-Emery liquid (spin-gapped metal) for both repulsive and attractive interactions, contrary to the usual Hubbard model, which exhibits a Mott-insulator phase for repulsive interactions. Ultracold fermions in driven one-dimensional bipartite optical lattices provide an interesting platform for the realization of this long-studied four-Fermi-point unconventional metal.

  13. Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study

    NASA Astrophysics Data System (ADS)

    Parihar, Abhinav; Shukla, Nikhil; Datta, Suman; Raychowdhury, Arijit

    2015-02-01

    Computing with networks of synchronous oscillators has attracted wide-spread attention as novel materials and device topologies have enabled realization of compact, scalable and low-power coupled oscillatory systems. Of particular interest are compact and low-power relaxation oscillators that have been recently demonstrated using MIT (metal-insulator-transition) devices using properties of correlated oxides. Further the computational capability of pairwise coupled relaxation oscillators has also been shown to outperform traditional Boolean digital logic circuits. This paper presents an analysis of the dynamics and synchronization of a system of two such identical coupled relaxation oscillators implemented with MIT devices. We focus on two implementations of the oscillator: (a) a D-D configuration where complementary MIT devices (D) are connected in series to provide oscillations and (b) a D-R configuration where it is composed of a resistor (R) in series with a voltage-triggered state changing MIT device (D). The MIT device acts like a hysteresis resistor with different resistances in the two different states. The synchronization dynamics of such a system has been analyzed with purely charge based coupling using a resistive (RC) and a capacitive (CC) element in parallel. It is shown that in a D-D configuration symmetric, identical and capacitively coupled relaxation oscillator system synchronizes to an anti-phase locking state, whereas when coupled resistively the system locks in phase. Further, we demonstrate that for certain range of values of RC and CC, a bistable system is possible which can have potential applications in associative computing. In D-R configuration, we demonstrate the existence of rich dynamics including non-monotonic flows and complex phase relationship governed by the ratios of the coupling impedance. Finally, the developed theoretical formulations have been shown to explain experimentally measured waveforms of such pairwise coupled

  14. Magnetism and Metal-Insulator Transition in Fe(Sb1−xTex)2

    SciTech Connect

    Petrovic, C.; Hu, R.; Mitrovic, V.F.

    2009-02-09

    We have investigated structural, magnetic, and transport properties of Fe(Sb{sub 1-x}Te{sub x}){sub 2} single crystals. Whereas metallic ground state is induced for x = 0.001, canted antiferromagnetism is observed for 0.1 {le} x {le} 0.4 with an intermediate ferromagnetic phase for x = 0.2. With higher Te doping, semiconducting behavior is restored and the variable range hopping conduction mechanism dominates at low temperatures for 0.4 {le} x {le} 0.6. We discuss our results within the framework of inverted metal to insulator in correlated electron insulators.

  15. Directing colloidal assembly and a metal-insulator transition using quenched-disordered polymeric networks

    NASA Astrophysics Data System (ADS)

    Phan, Anh; Jadrich, Ryan; Schweizer, Kenneth

    2015-03-01

    Replica integral equation and effective medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly and realize equilibrium states of high electrical conductivity at low physical volume fractions. This is achieved by employing variable mesh size networks of rigid rod or semiflexible polymers as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low dimensional network and fluctuation-driven colloid clustering in the pore spaces, distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. Polymer conformational fluctuations are found to significantly modify the physical adsorption process and hence the ability of colloids to organize along the filamentary network strands. Qualitatively new physical behavior can emerge as the pore size approaches the colloid diameter, reflecting strong frustrating constraints of the template on colloidal assembly.

  16. Topological textures and metal-insulator transition in Reentrant Integer Quantum Hall Effect: role of disorder

    NASA Astrophysics Data System (ADS)

    Lyanda-Geller, Yuli; Simion, George

    2015-03-01

    We investigate a ground state of the two-dimensional (2D) electron liquid in the presence of disorder for Landau level filling factors, for which the re-entrant integer quantum Hall effect is observed. Our particular interest is the range of filling factors, which in a clean 2D system is favorable to formation of the two-electron (2e) bubble crystal. For the smooth random potential due to charged impurities placed far away from the 2D gas, the ground state is a lightly distorted 2e bubble crystal. However, for positively or negatively charged residual impurities located approximately within about three magnetic lengths from the 2D electrons, the ground state contains charged 2e complexes formed either by positively charged impurity and 3e defect bubble, or negatively charged impurity and 2e defect bubble. In the vicinity of 1e and 3e defect bubbles, the 2e bubbles of the crystal change their shape from round to elongated forming hedgehog (for 1e defect) or vortex (for 3e defect) textures. The topological textures due to these complexes interact with vortex and hedgehog excitations, generated as temperature increases that are not bound by residual impurities. The temperature of insulator to metal transition calculated with both bound and unbound defects agrees with experiment. Research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0010544.

  17. Probing the Metal-Insulator Transition in BaTiO3 by Electrostatic Doping

    NASA Astrophysics Data System (ADS)

    Raghavan, Santosh; Zhang, Jack Y.; Shoron, Omor F.; Stemmer, Susanne

    2016-07-01

    The metal-to-insulator transition in BaTiO3 is investigated using electrostatic doping, which avoids effects from disorder and strain that would accompany chemical doping. SmTiO3/BaTiO3/SrTiO3 heterostructures are doped with a constant sheet carrier density of 3 ×1014 cm-2 that is introduced via the polar SmTiO3/BaTiO3 interface. Below a critical BaTiO3 thickness, the structures exhibit metallic behavior with high carrier mobilities at low temperatures, similar to SmTiO3/SrTiO3 interfaces. Above this thickness, data indicate that the BaTiO3 layer becomes ferroelectric. The BaTiO3 lattice parameters increase to a value consistent with a strained, tetragonal unit cell, the structures are insulating below ˜125 K , and the mobility drops by more than an order of magnitude, indicating self-trapping of carriers. The results shed light on the interplay between charge carriers and ferroelectricity.

  18. Stress-induced self-rolled metal/insulator bifilm microtube with micromesh walls

    NASA Astrophysics Data System (ADS)

    Lee, Kook-Nyung; Seo, Yeong-Tai; Lee, Min-Ho; Jung, Suk-Won; Kim, Yong-Kweon; Kim, Jung-Mu; Kyeong Seong, Woo

    2013-01-01

    A metal/insulator microtube with micromesh walls was constructed using stress-assisted self-rolling technology. The mesh-sidewall Pt/Ti/SiO2 microtube was self-formed by a tensile-stressed metal Pt/Ti film deposited onto a pre-patterned SiO2 micromesh layer. The microtube measured about 25 µm in diameter and was longer than 7 mm. The sidewall of the microtube was a square mesh, 5-20 µm long, and was electrically connected to electrical pads for electrical conductance measurement. The electrical resistance of the rolled-up microtube was measured to be 250-350 Ω when the microtube resistor's length was around 540 µm. The real-time measurement of the conductance change of the microtube with a Pt resistor could monitor the temperature change generated by heat injection. The microtube with micromesh walls is expected to be an interesting structure that has promising potential for use in electronics, chemical and biological applications.

  19. Spin Correlations and the Mott-Hubbard Metal-Insulator Transition in Vanadium Trioxide: a Neutron Scattering Study.

    NASA Astrophysics Data System (ADS)

    Bao, Wei

    rm V_2O_3 is a canonical Mott system where strong correlations among electrons drive spectacular metal-insulator transitions and the metallic rm V_2O_3 has served as a prototype of the Brinkman-Rice strongly correlated Fermi liquid. Research in Mott-Hubbard systems has largely focused on charge dynamics. Spin dynamics is widely assumed as described by localized spin fluctuations on the grounds that the electrons in the metal are nearly localized near the Mott transition. Discovery of high T_{C} superconductivity in cuprates and the subsequent attribution of spin fluctuations in pairing electrons demand a better understanding of strongly correlated electron systems in general and spin dynamics of these systems in particular. Using magnetic neutron scattering, we discovered an incommensurate spin density wave in doping stabilized metallic V_{2-y}O _3 at low temperatures, which appears not to be directly related to the antiferromagnetic order in the insulating rm V_2O_3. This weak ordering phenomenon at low temperatures is accompanied by energetic spin fluctuations with large spectral weight throughout the paramagnetic metallic phase of rm V_2O_3, reflecting the itinerant nature of magnetism with an energy scale related to the Fermi energy, in contrast to the conventional k _{B}T ~ J of a localized -spin model, even on the verge of Mott transition. Spin fluctuations in the paramagnetic insulating (V _{1-x}Cr_{x })_2O_3 were discovered to relate to those of paramagnetic metallic rm V_2O_3 rather than to the antiferromagnetic order of the low temperature insulating phase. The short correlation length in the paramagnetic insulator was discovered to be controlled by a mechanism other than thermal spin fluctuations. This unusual property invalidates previous claims of explaining the phase diagram of rm V_2O_3 based on a one-band Hubbard model and indicates the important physical consequences of degenerate Hubbard bands in rm V_2O_3. Work in this dissertation was performed

  20. Metal-Insulator Transitions.

    ERIC Educational Resources Information Center

    Mott, Nevill

    1978-01-01

    Explains how changes in temperature, pressure, magnetic field or alloy composition can affect the electronic band structure of substances, leading in some cases to dramatic changes in conductivity. (GA)

  1. Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2016-02-01

    Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

  2. Fano response induced by the interference between localized plasmons and interface reflections in metal-insulator-metal waveguide structure

    NASA Astrophysics Data System (ADS)

    Li, Hong-Ju; Wang, Ling-Ling; Zhai, Xiang

    2016-06-01

    The original Fano response induced by the interference between the localized plasmons and interface-reflected surface plasmon polaritons in a single metal-insulator-metal waveguide with two parallel separated metal strips is predicted theoretically through the coupled mode theory combined with the Fano function. The prominent asymmetric line shape resulting from the coupling between the discrete dipole resonance formed between metal strips and an interface-reflected-induced continuum is confirmed by the performed numerical simulations. The novel Fano spectrum is tuned easily by varying the length and coupling distance of metal strips. By introducing another separated metal strip, the outstanding double Fano behavior is obtained, and the corresponding underlying physics is illustrated. In particular, based on the performed refractive index sensing spectra, the high sensitivity of 855 nm/RIU and figure of merit up to 30 are achieved via the double Fano resonance. Undoubtedly, such ingenious structure may benefit the fabrications of nano-integrated plasmonic devices for optical switching and sensing.

  3. Ground-state oxygen holes and the metal-insulator transition in the negative charge-transfer rare-earth nickelates

    NASA Astrophysics Data System (ADS)

    Bisogni, Valentina; Catalano, Sara; Green, Robert J.; Gibert, Marta; Scherwitzl, Raoul; Huang, Yaobo; Strocov, Vladimir N.; Zubko, Pavlo; Balandeh, Shadi; Triscone, Jean-Marc; Sawatzky, George; Schmitt, Thorsten

    2016-10-01

    The metal-insulator transition and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here we combine X-ray absorption and resonant inelastic X-ray scattering (RIXS) spectroscopies to resolve important aspects of the complex electronic structure of rare-earth nickelates, taking NdNiO3 thin film as representative example. The unusual coexistence of bound and continuum excitations observed in the RIXS spectra provides strong evidence for abundant oxygen holes in the ground state of these materials. Using cluster calculations and Anderson impurity model interpretation, we show that distinct spectral signatures arise from a Ni 3d8 configuration along with holes in the oxygen 2p valence band, confirming suggestions that these materials do not obey a conventional positive charge-transfer picture, but instead exhibit a negative charge-transfer energy in line with recent models interpreting the metal-insulator transition in terms of bond disproportionation.

  4. Charge-density-wave ordering in the metal-insulator transition compound PrRu{sub 4}P{sub 12}

    SciTech Connect

    Lee, C.H.; Matsuhata, H.; Yamaguchi, H.; Sekine, C.; Kihou, K.; Suzuki, T.; Noro, T.; Shirotani, I.

    2004-10-15

    X-ray and electron diffraction measurements on the metal-insulator (M-I) transition compound PrRu{sub 4}P{sub 12} have revealed a periodic ordering of charge density around the Pr atoms. It is found that the ordering is associated with the onset of a low temperature insulator phase. These conclusions are supported by the facts that the space group of the crystal structure transforms from Im3 to Pm3 below the M-I transition temperature and also that the temperature dependence of the superlattice peaks in the insulator phase follows the squared BCS function. The M-I transition could be originated from the perfect nesting of the Fermi surface and/or the instability of the f electrons.

  5. Changes in the electronic structure and spin dynamics across the metal-insulator transition in La1 -xSrxCoO3

    NASA Astrophysics Data System (ADS)

    Smith, R. X.; Hoch, M. J. R.; Moulton, W. G.; Kuhns, P. L.; Reyes, A. P.; Boebinger, G. S.; Zheng, H.; Mitchell, J. F.

    2016-01-01

    The magnetoelectronic properties of La1 -xSrxCoO3 , which include giant magnetoresistance, are strongly dependent on the level of hole doping. The system evolves, with increasing x , from a spin glass insulator to a metallic ferromagnet with a metal-insulator (MI) transition at xC ˜0.18 . Nanoscale phase separation occurs in the insulating phase and persists, to some extent, into the just-metallic phase. The present experiments at 4.2 K have used 139139 La nuclear magnetic resonance to investigate the transition from hopping dynamics for x < xC to Korringa-like ferromagnetic metal behavior for x > xC. A marked decrease in the spin-lattice relaxation rate is found in the vicinity of xC as the MI transition is crossed. This behavior is accounted for in terms of the evolution of the electronic structure and dynamics with cluster size.

  6. Effective Hamiltonians for correlated narrow energy band systems and magnetic insulators: Role of spin-orbit interactions in metal-insulator transitions and magnetic phase transitions.

    PubMed

    Chakraborty, Subrata; Vijay, Amrendra

    2016-04-14

    Using a second-quantized many-electron Hamiltonian, we obtain (a) an effective Hamiltonian suitable for materials whose electronic properties are governed by a set of strongly correlated bands in a narrow energy range and (b) an effective spin-only Hamiltonian for magnetic materials. The present Hamiltonians faithfully include phonon and spin-related interactions as well as the external fields to study the electromagnetic response properties of complex materials and they, in appropriate limits, reduce to the model Hamiltonians due to Hubbard and Heisenberg. With the Hamiltonian for narrow-band strongly correlated materials, we show that the spin-orbit interaction provides a mechanism for metal-insulator transition, which is distinct from the Mott-Hubbard (driven by the electron correlation) and the Anderson mechanism (driven by the disorder). Next, with the spin-only Hamiltonian, we demonstrate the spin-orbit interaction to be a reason for the existence of antiferromagnetic phase in materials which are characterized by a positive isotropic spin-exchange energy. This is distinct from the Néel-VanVleck-Anderson paradigm which posits a negative spin-exchange for the existence of antiferromagnetism. We also find that the Néel temperature increases as the absolute value of the spin-orbit coupling increases. PMID:27083708

  7. Hopping energy and percolation-type transport in p-GaAs low densities near the 2D metal-insulator transition at zero magnetic field

    NASA Astrophysics Data System (ADS)

    Dlimi, S.; El kaaouachi, A.; Narjis, A.; Limouny, L.; Sybous, A.; Errai, M.

    2013-10-01

    We investigated the temperature dependence of resistivity of a high mobility two-dimensional holes system grown on the (311) GaAs surface in the absence of the magnetic field near the metal-insulator transition. The Coulomb hopping was found in a wide range of temperature and carrier density. Quantitative analysis of our results suggests that a crossover from Efros-Shklovskii to Mott variable range hopping due to screening phenomenon when the hopping distance increases. We found that using the 2D single particle hopping amplitude CES gives unreasonably high localization lengths. Therefore, we believe that electrical transport is dominated by correlated hopping and the hopping amplitude must be renormalized by a reduction factor A≈1.6. The localization length appears to diverge in a power-law fashion near the transition point. The analysis of the hopping gives results consistent with the prediction of the critical point from a recent study of percolation and other experiences.

  8. Origin of the metal-insulator transition in ultrathin films of L a2 /3S r2 /3Mn O3

    NASA Astrophysics Data System (ADS)

    Liao, Zhaoliang; Li, Fengmiao; Gao, Peng; Li, Lin; Guo, Jiandong; Pan, Xiaoqing; Jin, R.; Plummer, E. W.; Zhang, Jiandi

    2015-09-01

    Many ultrathin films of transition metal oxides exhibit nonmetallic behavior, in contrast to their metallic bulk counterpart, thus displaying a metal-insulator transition (MIT) as the film thickness is reduced. The nature of this MIT has been a long-standing issue in the epitaxial oxide research community. Here, we report the processing dependence of the critical thickness (tc) of MIT and the origin of the insulating phase in L a2 /3S r1 /3Mn O3 (LSMO) films. A tc of 3 unit cells (u.c.) is achieved by minimizing oxygen vacancies under optimal growth conditions, diminishing the epitaxial strain with a tunable buffer layer and suppressing surface strain by film capping. The electrical transport measurements demonstrate that the nonmetallic behavior in LSMO thin films is an unavoidable result of localization initiated by inherent disorder but amplified by the reduction in dimensionality.

  9. Cu(Ir1 − xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    PubMed Central

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-01-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 − xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states. PMID:24518384

  10. Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices

    NASA Astrophysics Data System (ADS)

    Wei, Haoming; Grundmann, Marius; Lorenz, Michael

    2016-08-01

    Recently, topological conductivity has been predicted theoretically in LaNiO3(111)-based superlattices. Here we report high-quality epitaxial LaNiO3/LaAlO3 superlattices on (111)-oriented SrTiO3 and LaAlO3 single crystals. For both substrates a metal-insulator transition with decreasing number of LaNiO3 monolayers is found. While the electrical transport is dominated by two-dimensional variable range hopping for superlattices grown on polar mismatched SrTiO3(111), it switches to a thermally activated single gap behavior on polar matched LaAlO3(111). The gap energy of the polar double-layer LaNiO3 superlattices can be tuned via the thickness of the insulating LaAlO3 layers.

  11. Cu(Ir1 - xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-02-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 - xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states.

  12. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

    PubMed Central

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-01-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

  13. Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates

    SciTech Connect

    Martens, Koen; Aetukuri, Nagaphani; Jeong, Jaewoo; Samant, Mahesh G.; Parkin, Stuart S. P.

    2014-02-24

    Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO{sub 2} (001), only ∼2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ∼500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO{sub 2}(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700–750  °C in flowing oxygen. This pretreatment removes surface contaminants, TiO{sub 2} defects, and provides a terraced, atomically smooth surface.

  14. Distinctive Finite Size Effects on the Phase Diagram and Metal-insulator Transitions of Tungsten-doped Vanadium(IV) Oxide

    SciTech Connect

    L Whittaker; T Wu; C Patridge; S Ganapathy; S Banerjee

    2011-12-31

    The influence of finite size in altering the phase stabilities of strongly correlated materials gives rise to the interesting prospect of achieving additional tunability of solid-solid phase transitions such as those involved in metal-insulator switching, ferroelectricity, and superconductivity. We note here some distinctive finite size effects on the relative phase stabilities of insulating (monoclinic) and metallic (tetragonal) phases of solid-solution W{sub x}V{sub 1-x}O{sub 2}. Ensemble differential scanning calorimetry and individual nanobelt electrical transport measurements suggest a pronounced hysteresis between metal {yields} insulator and insulator {yields} metal phase transformations. Both transitions are depressed to lower critical temperatures upon the incorporation of substitutional tungsten dopants but the impact on the former transition seems far more prominent. In general, the depression in the critical temperatures upon tungsten doping far exceeds corresponding values for bulk W{sub x}V{sub 1-x}O{sub 2} of the same composition. Notably, the depression in phase transition temperature saturates at a relatively low dopant concentration in the nanobelts, thought to be associated with the specific sites occupied by the tungsten substitutional dopants in these structures. The marked deviations from bulk behavior are rationalized in terms of a percolative model of the phase transition taking into account the nucleation of locally tetragonal domains and enhanced carrier delocalization that accompany W{sup 6+} doping in the W{sub x}V{sub 1-x}O{sub 2} nanobelts.

  15. Localization of metal-induced gap states at the metal-insulator interface: Origin of flux noise in SQUIDs and superconducting qubits

    SciTech Connect

    Choi, SangKook; Lee, Dung-Hai; Louie, Steven G.; Clarke, John

    2009-10-10

    The origin of magnetic flux noise in Superconducting Quantum Interference Devices with a power spectrum scaling as 1/f (f is frequency) has been a puzzle for over 20 years. This noise limits the decoherence time of superconducting qubits. A consensus has emerged that the noise arises from fluctuating spins of localized electrons with an areal density of 5 x 10(17)m(-2). We show that, in the presence of potential disorder at the metal-insulator interface, some of the metal-induced gap states become localized and produce local moments. A modest level of disorder yields the observed areal density.

  16. Real-Time Structural and Electrical Characterization of Metal-Insulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters.

    PubMed

    Kim, Min-Woo; Ha, Sung-Soo; Seo, Okkyun; Noh, Do Young; Kim, Bong-Joong

    2016-07-13

    Single-crystal VO2 wires have gained tremendous popularity for enabling the study of the fundamental properties of the metal-insulator transition (MIT); however, it remains tricky to precisely measure the intrinsic properties of the transitional phases with controlled wire-growth properties, such as diameter. Here, we report a facile method for growing VO2 wires with controlled diameters by separating the formation of the liquidus V2O5 seed droplets from the evolution of the VO2 wire using oxygen gas. The kinetic analyses suggest that the growth proceeds via the VS (vapor-solid) mechanism, whereas the droplet determines the size and the location of the wire. In situ Raman spectroscopy combined with analyses of the electrical properties of an individual wire allowed us to construct a diameter-temperature phase diagram from three initial phases (i.e., M1, T, and M2), which were created by misfit stress from the substrate and were preserved at room temperature. We also correlated this relation with resistivity-diameter and activation energy-diameter relations supported by theoretical modeling. These carefully designed approaches enabled us to elucidate the details of the phase transitions over a wide range of stress conditions, offering an opportunity to quantify relevant thermodynamic and electronic parameters (including resistivities, activation energies, and energy barriers of the key insulating phases) and to explain the intriguing behaviors of the T phase during the MIT.

  17. Real-Time Structural and Electrical Characterization of Metal-Insulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters.

    PubMed

    Kim, Min-Woo; Ha, Sung-Soo; Seo, Okkyun; Noh, Do Young; Kim, Bong-Joong

    2016-07-13

    Single-crystal VO2 wires have gained tremendous popularity for enabling the study of the fundamental properties of the metal-insulator transition (MIT); however, it remains tricky to precisely measure the intrinsic properties of the transitional phases with controlled wire-growth properties, such as diameter. Here, we report a facile method for growing VO2 wires with controlled diameters by separating the formation of the liquidus V2O5 seed droplets from the evolution of the VO2 wire using oxygen gas. The kinetic analyses suggest that the growth proceeds via the VS (vapor-solid) mechanism, whereas the droplet determines the size and the location of the wire. In situ Raman spectroscopy combined with analyses of the electrical properties of an individual wire allowed us to construct a diameter-temperature phase diagram from three initial phases (i.e., M1, T, and M2), which were created by misfit stress from the substrate and were preserved at room temperature. We also correlated this relation with resistivity-diameter and activation energy-diameter relations supported by theoretical modeling. These carefully designed approaches enabled us to elucidate the details of the phase transitions over a wide range of stress conditions, offering an opportunity to quantify relevant thermodynamic and electronic parameters (including resistivities, activation energies, and energy barriers of the key insulating phases) and to explain the intriguing behaviors of the T phase during the MIT. PMID:27253750

  18. Phonon mode spectroscopy, electron-phonon coupling, and the metal-insulator transition in quasi-one-dimensional M2Mo6Se6

    NASA Astrophysics Data System (ADS)

    Petrović, A. P.; Lortz, R.; Santi, G.; Decroux, M.; Monnard, H.; Fischer, Ø.; Boeri, L.; Andersen, O. K.; Kortus, J.; Salloum, D.; Gougeon, P.; Potel, M.

    2010-12-01

    We present electronic-structure calculations, electrical resistivity data, and the first specific-heat measurements in the normal and superconducting states of quasi-one-dimensional M2Mo6Se6 (M=Tl,In,Rb) . Rb2Mo6Se6 undergoes a metal-insulator transition at ˜170K : electronic-structure calculations indicate that this is likely to be driven by the formation of a dynamical charge-density wave. However, Tl2Mo6Se6 and In2Mo6Se6 remain metallic down to low temperature, with superconducting transitions at Tc=4.2K and 2.85 K, respectively. The absence of any metal-insulator transition in these materials is due to a larger in-plane bandwidth, leading to increased interchain hopping which suppresses the density wave instability. Electronic heat-capacity data for the superconducting compounds reveal an exceptionally low density of states DEF=0.055 states eV-1atom-1 , with BCS fits showing 2Δ/kBTc≥5 for Tl2Mo6Se6 and 3.5 for In2Mo6Se6 . Modeling the lattice specific heat with a set of Einstein modes, we obtain the approximate phonon density of states F(ω) . Deconvolving the resistivity for the two superconductors then yields their electron-phonon transport coupling function αtr2F(ω) . In Tl2Mo6Se6 and In2Mo6Se6 , F(ω) is dominated by an optical “guest ion” mode at ˜5meV and a set of acoustic modes from ˜10 to 30 meV. Rb2Mo6Se6 exhibits a similar spectrum; however, the optical phonon has a lower intensity and is shifted to ˜8meV . Electrons in Tl2Mo6Se6 couple strongly to both sets of modes, whereas In2Mo6Se6 only displays significant coupling in the 10-18 meV range. Although pairing is clearly not mediated by the guest ion phonon, we believe it has a beneficial effect on superconductivity in Tl2Mo6Se6 , given its extraordinarily large coupling strength and higher Tc compared to In2Mo6Se6 .

  19. Hopping conduction in p-type MoS{sub 2} near the critical regime of the metal-insulator transition

    SciTech Connect

    Park, Tae-Eon; Jang, Chaun E-mail: presto@kist.re.kr; Suh, Joonki; Wu, Junqiao; Seo, Dongjea; Park, Joonsuk; Lin, Der-Yuh; Huang, Ying-Sheng; Choi, Heon-Jin; Chang, Joonyeon E-mail: presto@kist.re.kr

    2015-11-30

    We report on temperature-dependent charge and magneto transport of chemically doped MoS{sub 2}, p-type molybdenum disulfide degenerately doped with niobium (MoS{sub 2}:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T{sup −0.25}, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS{sub 2}:Nb on the insulating side of the M-I transition.

  20. Sudden slowing down of charge carrier dynamics at the Mott metal-insulator transition in kappa-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br.

    SciTech Connect

    Brandenburg, J.; Muller, J.; Schlueter, J. A.

    2012-02-01

    We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-insulator (MI) transition in the quasi-two-dimensional organic charge-transfer salt {kappa}-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br by means of fluctuation (noise) spectroscopy. The observed 1/f-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponential kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies in the vicinity of the Mott critical endpoint. This sudden slowing down of the electron dynamics, observed here in a pure Mott system, may be a universal feature of MI transitions. Our findings are compatible with an electronic phase separation in the critical region of the phase diagram and offer an explanation for the not yet understood absence of effective mass enhancement when crossing the Mott transition.

  1. Chromium-niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kenichi; Shibuya, Keisuke; Suzuki, Megumi; Sakai, Kenichi; Fujita, Jun-ichi; Sawa, Akihito

    2016-05-01

    We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal-insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1-x-yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

  2. Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridate S r0.94I r0.78O2.68 single crystals

    NASA Astrophysics Data System (ADS)

    Zheng, H.; Terzic, J.; Ye, Feng; Wan, X. G.; Wang, D.; Wang, Jinchen; Wang, Xiaoping; Schlottmann, P.; Yuan, S. J.; Cao, G.

    2016-06-01

    The orthorhombic perovskite SrIr O3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose an insulating state. We report results of our investigation of bulk single-crystal S r0.94I r0.78O2.68 or Ir-deficient, orthorhombic perovskite SrIr O3 . It retains the same crystal structure as stoichiometric SrIr O3 but exhibits a sharp, simultaneous antiferromagnetic (AFM) and metal-insulator (MI) transition occurring in the basal-plane resistivity at 185 K. Above it, the basal-plane resistivity features an extended regime of almost linear temperature dependence up to 800 K but the strong electronic anisotropy renders an insulating behavior in the out-of-plane resistivity. The Hall resistivity undergoes an abrupt sign change and grows below 40 K, which along with the Sommerfeld constant of 20 mJ /mol K2 suggests a multiband effect. All results including our first-principles calculations underscore a delicacy of the paramagnetic, metallic state in SrIr O3 that is in close proximity to an AFM insulating state. The contrasting ground states in isostructural S r0.94I r0.78O2.68 and SrIr O3 illustrate a critical role of lattice distortions and Ir deficiency in rebalancing the ground state in the iridates. Finally, the concurrent AFM and MI transitions reveal a direct correlation between the magnetic transition and formation of an activation gap in the iridate, which is conspicuously absent in S r2Ir O4 .

  3. Correlation driven metal insulator transition as a function of thickness in SrRuO3 thin films

    NASA Astrophysics Data System (ADS)

    Koster, Gertjan; Blok, Jeroen; Siemons, Wolter; Zhong, Zhicheng; Kelly, Paul; Rijnders, Guus; Blank, Dave

    2010-03-01

    Recently there has been debate on the existence of a fundamental thickness limit of a metallic ground state of SrRuO3 thin films and what mechanism drives the system to an insulating state at low thicknesses should there be a transition. We present further evidence that a fundamental thickness level does indeed exist and that the metal-to-insulator transition is in fact a transition from a conducting ferromagnetic state to an insulating anti-ferromagnetic state that occurs from 3 to 4 unit cell layers of SrRuO3. We show this in two steps, in the first step we do Density Functional calculations on SrRuO3 that show a ferromagnetic -- anti-ferromagnetic phase transition occurring in SrRuO3 at large values of the electron correlation correlation U. In the second step we use ruthenium 3d x-ray photoemission spectra obtained in situ to demonstrate that U increases for very thin films of SrRuO3, driving the metal-to-insulator transition.

  4. Metal-insulator transition in AC{sub 60}:RbC{sub 60} and KC{sub 60}

    SciTech Connect

    Khazeni, K.; Crespi, V.H.; Hone, J.; Zettl, A.; Cohen, M.L. |

    1997-09-01

    At zero pressure polymerized RbC{sub 60} is an insulator, whereas polymerized KC{sub 60} is a metal with a slight low-temperature resistive upturn. We report measurements of the resistivity of RbC{sub 60} under pressure, finding a hysteretic resistive transition in RbC{sub 60} near 200 K at 5 kbar, at which point the material transforms from insulator to metal. Correcting the resistivity to constant volume, both materials are metallic below the transition with a common low-temperature resistive upturn which is suppressed under compression. {copyright} {ital 1997} {ital The American Physical Society}

  5. Transport properties and metal-insulator transition in oxygen deficient LaNiO3: a density functional theory study

    NASA Astrophysics Data System (ADS)

    Misra, D.; Kundu, T. K.

    2016-09-01

    Density functional theory with appropriate functional has been employed to investigate the metal to insulator transition in oxygen deficient LaNiO3-x (x = 0.0, 0.25, 0.5, 1.0) compounds. While the metallic nature of LaNiO3 is characterized by the low temperature Fermi liquid behavior of resistivity and a finite density of states at the Fermi level, the density of states and the transport properties clearly identify LaNiO2.75 as a semiconductor, and LaNiO2.5 as an insulator, which is followed by another insulator to semiconductor transition with further increase of x to ‘1’ in LaNiO2. This oxygen vacancy controlled metal to insulator transition is explained on the basis of non-adiabatic polaronic transport. From the covalency metric calculation of the chemical bonding and the Bader charge transfer analysis, this metal to insulator transition is attributed to the enhanced covalent part in the chemical bonding and reduced charge transfer from Ni to O atoms in LaNiO3-x compounds.

  6. Local structural distortion and electronic modifications in PrNiO3 across the metal-insulator transition

    SciTech Connect

    Piamonteze, C.; Tolentino, H.C.N.; Ramos, A.Y.; Massa, N. E.; Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.

    2003-01-24

    Local electronic and structural properties of PrNiO3 perovskite were studied by means of X-ray Absorption Spectroscopy at Ni K and L edges. The EXAFS results at Ni K edge show a structural transition from three different Ni-O bond-lengths at the insulating phase to two Ni-O bond-lengths above TMI. These results were interpreted as being due to a transition from a structure with two different Ni sites at the insulating phase to one distorted Ni site at the metallic phase. The Ni L edge spectra show a remarkable difference between the spectra measured at the insulating and metallic phases that indicates a decreasing degree of hybridization between Ni3d and O2p bands from the metallic to the insulating phase.

  7. Metal-insulator transition and novel magnetism driven by Coulomb interactions, spin-orbit coupling and disorder

    NASA Astrophysics Data System (ADS)

    Meetei, Oinam Nganba

    Strong interactions in transition metal oxides can lead to spectacular phenomena like high Tc superconductivity and colossal magnetoresistance which have dominated materials research in the past decades. The goal of this thesis is to examine the interplay of strong correlations with additional degrees of freedom, like spin orbit coupling (SOC), multiple transition metal ions and disorder. We start with a discussion of Mott insulators, with the transition metal in the d4 configuration, where the competition between superexchange interaction and SOC leads to a novel ferromagnetic insulator. In recent years SOC has been at the center stage of condensed matter research because it can produce band insulators in uncorrelated materials with non-trivial topological properties. Here, we focus on the dual role of SOC and strong interactions, naturally realized in 4d/5dd transition metal oxides. We show that in d4 Mott insulators, the local moment can be altered by varying the relative strength of SOC and superexchange, both of which are small parameters compared to the interaction energy scale. In fact, a phase transition from a non-magnetic insulator with J=0 singlets at every site to an orbitally entangled ferromagnetic insulator occurs with decreasing SOC. Our results challenge the commonly held notion that local moments are robust in a Mott insulator. We identify candidate materials and present predictions for Resonant X-ray Scattering (RXS) signatures of the unusual magnetism in d4 Mott insulators. Next we focus on the double perovskite material Sr2 CrOsO6 which is an insulator and has the highest ferromagnetic Tc among all perovskites with a net moment. It presents several puzzles which we address systematically. Its insulating behavior cannot be explained from a band theory point of view or from a naive consideration of Mott physics. Additionally, the net moment at low temperature, M(0)=0.75 μΒ ,is unusual for half-filled bands where anti-ferromagnetism is expected

  8. Field-dependent perpendicular magnetic anisotropy and interfacial metal-insulator transition in CoFeB/MgO systems

    NASA Astrophysics Data System (ADS)

    Barsukov, Igor; Fu, Yu; Safranski, C.; Chen, Yu-Jin; Youngblood, B.; Goncalves, A.; Sampaio, L.; Arias, R.; Spasova, M.; Farle, M.; Krivorotov, I.

    2015-03-01

    The CoFeB/MgO systems play a central role in magnetic tunnel junction devices due to the high tunneling magnetoresistance ratio. A strong perpendicular anisotropy (PMA) and voltage-controlled anisotropy are beneficial for spintronics application. We study PMA in thin films of Ta/Co20Fe60B20/MgO in the thickness range of 0.9-2.5 nm and find that it can be best described by the first two order terms. Surprisingly, we find PMA to be strongly field-dependent. Our results show that the field dependence has significant implications for determining and customizing magnetic anisotropy in spintronic applications. Our data suggest that it can be caused by an inhomogeneous interfacial spin pinning with a possibly ferrimagnetic phase at the CoFeB/MgO interface. We perform magnetometry and transport measurements and find a magnetization peak and resistance transitions at 160K, which are consistent with the presence of an interfacial oxide phase undergoing a Morin-like transition.

  9. Metal-insulator transition in Nd{sub 1−x}Eu{sub x}NiO{sub 3}: Entropy change and electronic delocalization

    SciTech Connect

    Jardim, R. F. Andrade, S.; Barbeta, V. B.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-07

    The metal-insulator (MI) phase transition in Nd{sub 1–x}Eu{sub x}NiO{sub 3}, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat C{sub P}(T). The MI transition temperature (T{sub MI}) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dT{sub MI}/dP were found: (i) for x ≤ 0.15, dT{sub MI}/dP is nearly constant and ∼−4.3 K/kbar; (ii) for x ≥ 0.15, dT{sub MI}/dP increases with x and it seems to reach a saturation value ∼−6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of T{sub MI}. The entropy change (ΔS) at T{sub MI} for the sample x = 0, estimated by using the dT{sub MI}/dP data and the Clausius-Clapeyron equation, resulted in ΔS ∼ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔS{sub M} ∼ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and C{sub P}(T) data indicates that the entropy change at T{sub MI} is mainly due to the electronic delocalization and not related to the AF transition.

  10. Metal insulator transition in vanadium dioxide nanobeams and magnetic-field asymmetry of nonlinear transport in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Wei, Jiang

    This dissertation includes two research projects. The first project of vanadium dioxide nanobeams (VO2) shows that there are many advantages to be gained from working with strongly correlated materials in nanoscale crystalline form. Small VO2 single crystals display abundant new properties. It is shown that metallic and insulating phases can coexist in VO2 due to the growth introduced strain. From the simple physical system of length-confined suspended VO2 naonobeam, it is observed that metallic phase supercools and the resistivity of insulating phase remains constant when metal and insulator coexist. Most importantly, the constant resistivity indicates that the MIT in VO2 is driven by strong electron-electron interactions. Also based on the unique mechanical buckling behavior of suspended VO2 nanobeam, we developed a new way of measuring the intrinsic transition temperature Tc, which is independent of hysteresis. Beyond these findings, we proposed a new phase diagram including a stable M2 phase, which can more accurately describe and explain all the variety of behavior of VO2 nanocrystals. However, many basic question remain about the behavior of VO2 such as the detailed form of the phase diagram including the precise phase boundaries between all three phases; effects of surface energy and finite geometry, surface doping, and other parameters on stability in small crystals; and kinetics of the transition. We may hope that once the fundamental behavior of the system has been better established theoretical progress will finally be possible in understanding the basic nature of the transition. In second research project, we have carried out the first experimental study of a new transport coefficient in nanoscale devices, namely, the magnitude of the V2B term in the I-V characteristics. This coefficient provides a way to quantify the electron-electron interaction strength, which is of particular interest in our chosen system of single-walled carbon nanotubes. We also

  11. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    NASA Astrophysics Data System (ADS)

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.

  12. Directing Colloidal Assembly and a Metal-Insulator Transition Using a Quench-Disordered Porous Rod Template

    NASA Astrophysics Data System (ADS)

    Jadrich, Ryan B.; Schweizer, Kenneth S.

    2014-11-01

    Replica and effective-medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly to achieve globally homogeneous, strongly clustered, and percolated equilibrium states of high electrical conductivity at low physical volume fractions. A key idea is to employ a quench-disordered, large-mesh rigid-rod network as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low-dimensional network and fluctuation-driven colloid clustering in the pore spaces, two distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. The approach is generalizable to more complicated template or colloidal architectures.

  13. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    PubMed Central

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-01-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent. PMID:27033955

  14. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  15. Superconductivity and crystal structural origins of the metal-insulator transition in Ba6 -xSrxNb10O30 tetragonal tungsten bronzes

    NASA Astrophysics Data System (ADS)

    Kolodiaznyi, Taras; Sakurai, Hiroya; Isobe, Masaaki; Matsushita, Yoshitaka; Forbes, Scott; Mozharivskyj, Yurij; Munsie, Timothy J. S.; Luke, Graeme M.; Gurak, Mary; Clarke, David R.

    2015-12-01

    Ba6 -xSrxNb10O30 solid solution with 0 ≤ x ≤6 forms the filled tetragonal tungsten bronze (TTB) structure. The Ba-end member crystallizes in the highest symmetry P 4 /m b m space group (a =b =12.5842 (18 )Å and c =3.9995 (8 )Å ) and so do all the compositions with 0 ≤ x ≤5 . The Sr-end member of the solid solution crystallizes in the tentatively assigned A m a m space group (a *=17.506 (4 )Å , b *=34.932 (7 )Å , and c *=7.7777 (2 )Å ). The latter space group is related to the parent P 4 /m b m TTB structure as a * ≈ √{2 }a ,b * ≈2 √{2 }a ,c *=2 c . Low-temperature specific heat measurements indicate that the Ba-rich compositions with x ≤2 are conventional BCS superconductors with TC ≤1.6 K and superconducting energy gaps of ≤0.38 meV. The values of the TC in the cation-filled Nb-based TTBs reported here are comparable with those of the unfilled KxWO3 and NaxWO3 TTBs having large alkali ion deficiency. As the unit cell volume decreases with increasing x , an unexpected metal-insulator transition (MIT) in Ba6 -xSrxNb10O30 occurs at x ≥3 . We discuss the possible origins of the MIT in terms of the carrier concentration, symmetry break, and Anderson localization.

  16. Polarity and the Metal-Insulator Transition in ultrathin LaNiO3 on SrTiO3

    NASA Astrophysics Data System (ADS)

    Freeland, J. W.; Tung, I. C.; Luo, G.; Zhou, H.; Lee, J. H.; Chang, S. H.; Morgan, D.; Bedzyk, M. J.; Fong, D. D.

    Dimensionality and strain control of nickelates has been shown as a route for control of interesting electronic and magnetic phases. However, little is know about the evolution of atomic structure in these layered architectures and the interplay with these states. Here we present, a detailed study of lattice structures measured real time during the layer-by-layer growth of LaNiO3 on SrTiO3. Using hard X-rays coupled with oxide MBE, we have tracked the lattice structure evolution as a function of depth across the regime where transport shows a clear metal to insulator transition. At the same time X-ray absorption shows the films are closer to LaNiO2.5 when thin and evolve to LaNiO3 by 10 unit cells thickness. Analysis of the structure during growth displays a very complex evolution throughout the film of the lattice parameter and displacement of the B-site from the unit cell center, which theory connects with pathways of compensating the polar mismatch at the surface and interface. Work at the APS, Argonne is supported by the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  17. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    DOE PAGESBeta

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Here, bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Usingmore » space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.« less

  18. Localization of Metal-Induced Gap States at the Metal-Insulator Interface: Origin of Flux Noise in SQUIDs and Superconducting Qubits

    NASA Astrophysics Data System (ADS)

    Choi, Sangkook; Lee, Dung-Hai; Louie, Steven G.; Clarke, John

    2010-03-01

    The origin of magnetic flux noise in dc Superconducting Quantum Interference Devices (SQUIDs) with a power spectrum scaling as 1/f (f is frequency) has been a puzzle for over 25 years. This noise limits both the low frequency performance of SQUIDs and the decoherence time of flux-sensitive superconducting qubits, making scaling-up for quantum computing problematic. Recent calculations and experiments indicate that the noise is generated by electrons that randomly reverse their spin directions. Their areal density of ˜ 5 x 10^17 m-2 is relatively insensitive to the nature of the superconductor and substrate. Here, we propose that the local magnetic moments originate in metal-induced gap states (MIGSs) localized by potential disorder at the metal-insulator interface. MIGSs are particularly sensitive to such disorder, so that the localized states have a Coulomb repulsion sufficiently large to make them singly occupied. Our calculations demonstrate that a modest level of disorder generates the required areal density of localized moments. This result suggests that magnetic flux noise could be reduced by fabricating superconductor-insulator interfaces with less disorder. Support: NSF DMR07-05941, US DOE De-AC02-05CH11231, Samsung Foundation, Teragrid, NERSC.

  19. Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1 -xSbxTe2 studied by angle-resolved photoemission

    NASA Astrophysics Data System (ADS)

    Trang, Chi Xuan; Wang, Zhiwei; Yamada, Keiko; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Segawa, Kouji; Ando, Yoichi

    2016-04-01

    We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1 -xSbxTe2 which is bulk insulating at 0.5 ≲x ≲0.9 and undergoes a metal-insulator-metal transition with the Sb content x . We found that this transition is characterized by a systematic hole doping with increasing x , which results in the Fermi-level crossings of the bulk conduction and valence bands at x ˜0 and x ˜1 , respectively. The Dirac point of the topological surface state is gradually isolated from the valence-band edge, accompanied by a sign reversal of Dirac carriers. We also found that the Dirac velocity is the largest among known solid-solution TI systems. The TlBi1 -xSbxTe2 system thus provides an excellent platform for Dirac-cone engineering and device applications of TIs.

  20. Metal-Insulator Transition of the New One-Dimensional Organic Conductors with Complete Uniform Stacks: (DMEDO-TTF)2X (X = ClO4 and BF4)

    NASA Astrophysics Data System (ADS)

    Kumeta, Shohei; Kawamoto, Tadashi; Shirahata, Takashi; Misaki, Yohji; Mori, Takehiko

    2016-09-01

    The structural, transport, and magnetic properties of the new organic conductors (DMEDO-TTF)2X (X = ClO4 and BF4), where DMEDO-TTF is dimethyl(ethylenedioxy)tetrathiafulvalene, have been investigated. These compounds have a complete uniform stack structure, indicating that a quasi-one-dimensional 3/4-filled band without a dimerization gap is realized. The ClO4 and BF4 salts show a first-order metal-insulator (MI) transition at approximately 190 and 210 K, respectively, in the cooling process. The ground state is a nonmagnetic insulator on the basis of magnetic susceptibility measurements. Low-temperature X-ray diffraction measurements show that the MI transition originates in the anion ordering transition with a superstructure wave vector of q = (0,1/2,0) corresponding to the stacking direction; the uniform donor stacking structure changes to the tetramerized structure with a large shift of the donors. The shift of the anion toward the central two donors in a tetramer indicates that the insulating phase is a charge-density-wave state.

  1. Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

    SciTech Connect

    Shao, Tao; Qi, Zeming Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Zhang, Guobin; Wang, Yu; Liu, Miao

    2015-07-13

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  2. The metal-insulator transition in nanocrystalline Pr0.67Ca0.33MnO3: the correlation between supercooling and kinetic arrest.

    PubMed

    Rawat, R; Chaddah, P; Bag, Pallab; Das, Kalipada; Das, I

    2012-10-17

    The transition and hysteresis widths of a disorder broadened first order magnetic transition vary in H-T space which influences the co-existing phase fraction at low temperature arising due to kinetic arrest of the first order transition. We explored the role of change in the relative width of the supercooling/superheating band and kinetic arrest band for a ferromagnetic metallic to antiferromagnetic insulating transition. It is shown that for a correlated kinetic arrest and supercooling bands, the topology of the devitrification curves (or transformation across the (H(K),T(K)) band during warming) changes with the change in the relative width of these two bands. In addition to this, for a broader kinetic arrest band, the transformation temperature across the superheating band under constant H now depends on the arrested phase fraction. These predictions have been tested on nanocrystalline Pr(0.67)Ca(0.33)MnO(3), which is known to show a large variation in hysteresis width in H-T space. This is the first report where correlation between the kinetic arrest band and the supercooling band has been shown experimentally, in contrast to the universal observation of anticorrelation reported so far.

  3. Metal insulator transition and magnetotransport anomalies in perovskite SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Lee, Yong Woo; Kim, Sang Woo; Jeong, Yoon Hee

    2015-03-21

    We investigated the nature of transport and magnetic properties in SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} (SIRO), which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin films on various substrates (e.g., SrTiO{sub 3} (001), (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7} (001), and LaAlO{sub 3} (001)). We observed systematic variation of underlying substrate dependent metal-to-insulator transition temperatures (T{sub MIT} ∼ 80 K on SrTiO{sub 3}, ∼90 K on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7}, and ∼100 K on LaAlO{sub 3}) in resistivity. At temperature 300 K ≥ T ≥ T{sub MIT}, SIRO is metallic and its resistivity follows a T{sup 3/2} power law, whereas insulating nature at T < T{sub MIT} is due to the localization effect. Magnetoresistance (MR) measurement of SIRO on SrTiO{sub 3} (001) shows negative MR at T < 25 K and positive MR at T > 25 K, with negative MR ∝ B{sup 1/2} and positive MR ∝ B{sup 2}; consistent with the localized-to-normal transport crossover dynamics. Furthermore, observed spin glass like behavior of SIRO on SrTiO{sub 3} (001) at T < 25 K in the localized regime validates the hypothesis that (Anderson) localization favors glassy ordering. These remarkable features provide a promising approach for future applications and of fundamental interest in oxide thin films.

  4. Electric field induced metal-insulator transition in VO2 thin film based on FTO/VO2/FTO structure

    NASA Astrophysics Data System (ADS)

    Hao, Rulong; Li, Yi; Liu, Fei; Sun, Yao; Tang, Jiayin; Chen, Peizu; Jiang, Wei; Wu, Zhengyi; Xu, Tingting; Fang, Baoying

    2016-03-01

    A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I-V hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.

  5. Metal-insulator crossover in multilayered MoS2.

    PubMed

    Park, Min Ji; Yi, Sum-Gyun; Kim, Joo Hyung; Yoo, Kyung-Hwa

    2015-10-01

    The temperature dependence of electrical transport properties was investigated for multilayered MoS2 field effect transistor devices with thicknesses of 3-22 nm. Some devices showed typical n-type semiconducting behavior, while others exhibited metal-insulator crossover (MIC) from metallic to insulating conduction at finite temperatures. The latter effect occurred near zero gate voltage or at high positive gate voltages. Analysis of Raman spectroscopy revealed the key difference that devices with MIC have a metallic 1T phase as well as a semiconducting 2H phase, whereas devices without the MIC did not have a metallic 1T phase. These results suggest that the metallic 1T phase may contribute to inducing the MIC.

  6. Electronic structure of a metal-insulator interface

    NASA Astrophysics Data System (ADS)

    Bordier, G.; Noguera, C.

    1991-07-01

    We present an analytical study of the electronic structure of a metal-insulator interface with special emphasis on the metal induced gap states (MIGS). It includes three steps: (i) a tight-binding approach of the dispersion relation and Green's function of insulators of NaCl or ZnS structure; (ii) a matching with free electron-like wavefunctions at the NaCl(100) or ZnS(110) surfaces, which yields the density and penetration depth of the MIGS as a function of the ionocovalent characteristics of the insulator and of the metal Fermi level; (iii) a self-consistent determination of the Fermi level position in a Thomas-Fermi approximation. The Schottky barrier height is derived under a simple analytic form and its dependence upon the metal work function is found in good agreement with experimental results.

  7. Gravitationally induced quantum transitions

    NASA Astrophysics Data System (ADS)

    Landry, A.; Paranjape, M. B.

    2016-06-01

    In this paper, we calculate the probability for resonantly inducing transitions in quantum states due to time-dependent gravitational perturbations. Contrary to common wisdom, the probability of inducing transitions is not infinitesimally small. We consider a system of ultracold neutrons, which are organized according to the energy levels of the Schrödinger equation in the presence of the Earth's gravitational field. Transitions between energy levels are induced by an oscillating driving force of frequency ω . The driving force is created by oscillating a macroscopic mass in the neighborhood of the system of neutrons. The neutron lifetime is approximately 880 sec while the probability of transitions increases as t2. Hence, the optimal strategy is to drive the system for two lifetimes. The transition amplitude then is of the order of 1.06 ×10-5, and hence with a million ultracold neutrons, one should be able to observe transitions.

  8. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values. PMID:27172429

  9. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

  10. Suppression of the metal-insulator transition by magnetic field in (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} (y = 0.0625)

    SciTech Connect

    Naito, Tomoyuki Fujishiro, Hiroyuki; Nishizaki, Terukazu; Kobayashi, Norio; Hejtmánek, Jiří; Knížek, Karel; Jirák, Zdeněk

    2014-06-21

    The (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} compound (y = 0.0625, T{sub MI-SS}=40 K), at the lower limit for occurrence of the first-order metal-insulator (MI) and simultaneous spin-state (SS) transitions, has been studied using electrical resistivity and magnetization measurements in magnetic fields up to 17 T. The isothermal experiments demonstrate that the low-temperature insulating phase can be destabilized by an applied field and the metallic phase returns well below the transition temperature T{sub MI-SS}. The reverse process with decreasing field occurs with a significant hysteresis. The temperature scans taken at fixed magnetic fields reveal a parabolic-like decrease in T{sub MI-SS} with increasing field strength and a complete suppression of the MI-SS transition in fields above 9 T.

  11. Nano-optical investigations of the metal-insulator phase behavior of individual VO(2) microcrystals.

    PubMed

    Jones, Andrew C; Berweger, Samuel; Wei, Jiang; Cobden, David; Raschke, Markus B

    2010-05-12

    Despite the relatively simple stoichiometry and structure of VO(2), many questions regarding the nature of its famous metal-insulator transition (MIT) remain unresolved. This is in part due to the prevailing use of polycrystalline film samples and the limited spatial resolution in most studies, hindering access to and control of the complex phase behavior and its inevitable spatial inhomogeneities. Here, we investigate the MIT and associated nanodomain formation in individual VO(2) microcrystals subject to substrate stress. We employ symmetry-selective polarization Raman spectroscopy to identify crystals that are strain-stabilized in either the monoclinic M1 or M2 insulating phase at room-temperature. Raman measurements are further used to characterize the phase dependence on temperature, identifying the appearance of the M2 phase during the MIT. The associated formation and spatial evolution of rutile (R) metallic domains is studied with nanometer-scale spatial resolution using infrared scattering-scanning near-field optical microscopy (s-SNOM). We deduce that even for small crystals of VO(2), the MIT is influenced by the competition between the R, M1, and M2 crystal phases with their different lattice constants subjected to the external substrate-induced stress. The results have important implications for the interpretation of the investigations of conventional polycrystalline thin films where the mutual interaction of constituent crystallites may affect the nature of the MIT in VO(2).

  12. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  13. Nonpercolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1 -xCaxMnO3

    NASA Astrophysics Data System (ADS)

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-01

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x =0.18 ,0.22 ). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS˜720 K. The study utilized explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1 -xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ˜1 nm with observably smaller distortions. In the x =0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ˜1050 K), where they are crystallographically prohibited. Their magnitude and subnanometer spatial extent remain unchanged.

  14. Non percolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1-xCaxMnO3

    DOE PAGESBeta

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-25

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x = 0.18,0.22). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS~720 K. The study utilizedmore » explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1–xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ~1 nm with observably smaller distortions. In the x = 0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ~1050 K), where they are crystallographically prohibited. As a result, their magnitude and subnanometer spatial extent remain unchanged.« less

  15. Uniaxial pressure effect of Metal-Insulator Transition (TMI) in oriented Sm0.55(Sr0.5Ca0.5)0.45MnO3

    NASA Astrophysics Data System (ADS)

    Arumugam, Sonachalam; Mohan Radheep, D.; Sarkar, P.; Mandal, P.; Arumugam Team; Prabhat Mandal Collaboration

    2013-06-01

    Perovskite type manganites R1 - xAxMnO3 (R: rare earth ions, A: alkaline earth ions) exhibit various fundamental phenomena like colossal magnetoresistance (CMR), phase separation, and first-order ferromagnetic (FM) to paramagnetic (PM) phase transition etc. Similar to CMR, piezoresistance (PR), the change in electrical resistance in response to external pressure, can also be important parameter for various technological applications. Several studies shows that the order of phase transition can be changed either by applying external perturbations like magnetic field, pressure (P) , etc. or internally like doping etc. SSCMO single crystal was grown using floating zone technique and the quality was carefully checked and aligned along the c axis as well as ab-plane. We have investigated the effect of uniaxial pressure (P) on electrical resistivity along the ab-plane and c - axis in a single crystal of SSCMO. A huge PR ~107 % at P = 90 MPa and a remarkable increase (~79 K/GPa) of TMI have been observed with the application of P || c - axis, while TMI decreases at the rate of ~77 K/GPa for P⊥ c axis. These values of PR and dTMI /dP are much larger than those observed in other perovskite and bilayer manganites. Hence, these materials may be used for various technological applications. The authors SA and DMR wishes to thank DST, UGC and CSIR-SRF scheme (India) for the financial support to carry out the research work.

  16. Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Zhan, J. M.; Li, P. G.; Liu, H.; Tao, S. L.; Ma, H.; Shen, J. Q.; Pan, M. J.; Zhang, Z. J.; Wang, S. L.; Yuan, G. L.

    2016-04-01

    La0.67Sr0.33MnO3 (LSMO) thin films were deposited on (001)SrTiO3(STO) and n-type doped Nb:SrTiO3(NSTO) single crystal substrates respectively. The metal to insulator transition temperature(TMI) of LSMO film on NSTO is lower than that on STO, and the TMI of LSMO can be tuned by changing the applied current in the LSMO/NSTO p-n junction. Such behaviors were considered to be related to the carrier concentration redistribution in LSMO film caused by the change of depletion layer thickness in p-n junction which depends greatly on the applied electric field. The phenomenon could be used to configure artificial devices and exploring the underlying physics.

  17. Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si{sub 0.02}Zn{sub 0.98}O thin films grown by pulsed laser deposition

    SciTech Connect

    Das, Amit K. Ajimsha, R. S.; Kukreja, L. M.

    2014-05-21

    Metal to insulator transition was observed in Si{sub 0.02}Zn{sub 0.98}O (SZO) films, grown by pulsed laser deposition on sapphire substrates, as the thicknesses of the films were reduced from ∼40 to 15 nm. The SZO film with thickness of ∼40 nm showed typical metallic behavior in temperature dependent resistivity measurements. On the contrary, the SZO film with thickness of ∼15 nm was found to exhibit strong localization where the transport at low temperature was dominated by variable range hopping conduction. In the intermediate thickness regime, quantum corrections were important and a dimensional crossover from 3D to 2D weak localization occurred in the SZO film with thickness of 20 nm.

  18. Electronic structure of a metal-insulator interface: Towards a theory of nonreactive adhesion

    NASA Astrophysics Data System (ADS)

    Bordier, G.; Noguera, C.

    1991-09-01

    With the aim of studying metal-insulator adhesion, we have performed an analytical description of the electronic structure of a flat and defectless metal-insulator interface, for both rocksalt and zinc-blende crystallographic structures of the insulator and, respectively, (100) and (110) orientations of the interface. We model the metal by a jellium, and the AB-type insulator by a tight-binding Hamiltonian with one atomic orbital per site. A matching procedure involving a Green's-function method yields the local density of states of the metal-induced gap states (MIGS), which are found to be in good agreement with previous numerical estimations on specific materials. By analytically solving the Poisson equation in a self-consistent way, we are able to determine the position of the Fermi level of the whole system for any value of the insulator ionicity. Our results depend upon the density of electrons in the metal, and upon the penetration length and the density of MIGS at midgap. They do not depend much upon the crystallographic structure and orientation of the interface. The two relevant parameters are the Fermi energy of the metal and a ratio that represents the ionocovalent character of the insulator. This latter quantity can be allowed to vary from zero to infinity, thus describing the whole range of compounds from covalent semiconductors to highly insulating materials. We produce an analytical expression of the Schottky-barrier height and of the index of interface behavior, S, valid in the whole range of ionicity. S is found to fit well the available experimental data. We demonstrate that the capacitor model to estimate S is restricted to strongly ionic insulators, while it was generally used in the opposite limit. We suggest finally that the above electronic parameters also drive the strength of adhesion and wetting in nonreactive metal-insulator systems.

  19. Mott metal-insulator transition on compressible lattices.

    PubMed

    Zacharias, Mario; Bartosch, Lorenz; Garst, Markus

    2012-10-26

    The critical properties of the finite temperature Mott end point are drastically altered by a coupling to crystal elasticity, i.e., whenever it is amenable to pressure tuning. Similar as for critical piezoelectric ferroelectrics, the Ising criticality of the electronic system is preempted by an isostructural instability, and long-range shear forces suppress microscopic fluctuations. As a result, the end point is governed by Landau criticality. Its hallmark is, thus, a breakdown of Hooke's law of elasticity with a nonlinear strain-stress relation characterized by a mean-field exponent. Based on a quantitative estimate, we predict critical elasticity to dominate the temperature range ΔT*/T(c)≃8%, close to the Mott end point of κ-(BEDT-TTF)(2)X. PMID:23215206

  20. Low-voltage current noise in long quantum superconductor/insulator/normal-metal/insulator/superconductor junctions.

    SciTech Connect

    Kopnin, N. B.; Galperin, Y. M.; Vinokur, V.; Materials Science Division; Helsinki Univ. Tech.; L.D. Landau Inst. for Theoretical Physics; Univ. Oslo; A.F. Ioffe Physico-Tech. Inst. of Russian Academy of Sciences

    2007-01-01

    The current noise in long superconductor/insulator/normal-metal/insulator/superconductor junctions at low temperatures is sensitive to the population of the subgap states, which is far from equilibrium even at low bias voltages. A nonequilibrium distribution is established due to an interplay between voltage-driven interlevel Landau-Zener transitions and intralevel inelastic relaxation. The Fano factor (the ratio of the zero-frequency noise to the dc current) is enhanced drastically, being proportional to the number of times which a particle flies along the Andreev trajectory before it escapes from the level due to inelastic scattering. For weak Landau-Zener transitions, the enhancement is even larger due to a smaller dc current.

  1. Plasmonic mode interferences and Fano resonances in Metal-Insulator-Metal nanostructured interface.

    PubMed

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-09-24

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range.

  2. Plasmonic mode interferences and Fano resonances in Metal-Insulator- Metal nanostructured interface

    PubMed Central

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-01-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range. PMID:26399425

  3. Plasmonic mode interferences and Fano resonances in Metal-Insulator- Metal nanostructured interface

    NASA Astrophysics Data System (ADS)

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-09-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range.

  4. Plasmonic mode interferences and Fano resonances in Metal-Insulator-Metal nanostructured interface.

    PubMed

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-01-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range. PMID:26399425

  5. A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

    PubMed

    Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

    2011-09-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

  6. Enhanced rectifying response from metal-insulator-insulator-metal junctions

    NASA Astrophysics Data System (ADS)

    Maraghechi, P.; Foroughi-Abari, A.; Cadien, K.; Elezzabi, A. Y.

    2011-12-01

    We present on a metal-insulator-insulator-metal quantum electronic tunneling devices suitable for high speed rectifiers. Through the introduction of double oxide layer between similar metallic electrodes, a cascaded potential barrier is formed which alters the electron tunneling mechanism at forward versus the reverse bias. The cascaded potential barrier engineering manifests itself in both a highly nonlinear and asymmetric I-V junction characteristic. It is envisioned that high speed rectifiers and mixers having extraordinary nonlinearity can be realized through the incorporation of the cascaded potential barrier architecture and dissimilar metallic electrodes.

  7. Surface polaritons of a metal-insulator-metal curved slab

    NASA Astrophysics Data System (ADS)

    Moradi, Afshin

    2016-09-01

    The properties of s- and p-polarized surface polariton modes propagating circumferentially around a portion of a cylindrical metal-insulator-metal structure are studied, theoretically. By using the Maxwell equations in conjunction with the Drude model for the dielectric function of the metals and applying the appropriate boundary conditions, the dispersion relations of surface waves for two types of modes, are derived and numerically solved. The effects of the slab curvature and insulator thickness on the propagation of electromagnetic modes are investigated. The differences of the s- and p-polarized surface modes are also shown.

  8. Epitaxial-strain-induced polar-to-nonpolar transitions in layered oxides

    NASA Astrophysics Data System (ADS)

    Lu, Xue-Zeng; Rondinelli, James M.

    2016-09-01

    Epitaxial strain can induce collective phenomena and new functionalities in complex oxide thin films. Strong coupling between strain and polar lattice modes can stabilize new ferroelectric phases from nonpolar dielectrics or enhance electric polarizations and Curie temperatures. Recently, strain has also been exploited to induce novel metal-insulator transitions and magnetic reconstructions through its coupling to nonpolar modes, including rotations of BO6 transition-metal octahedra. Although large strains are thought to induce ferroelectricity, here we demonstrate a polar-to-nonpolar transition in (001) films of layered A3B2O7 hybrid-improper ferroelectrics with experimentally accessible biaxial strains. We show the origin of the transition originates from the interplay of trilinear-related lattice mode interactions active in the layered oxides, and those interactions are directly strain tunable. Our results call for a careful re-examination of the role of strain-polarization coupling in ferroelectric films with nontrivial anharmonicities and offer a route to search for new functionalities in layered oxides.

  9. Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions

    SciTech Connect

    Chaudhuri, S.; Maasilta, I. J.

    2014-03-24

    We report the development of superconducting tantalum nitride (TaN{sub x}) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO{sub x} and TaO{sub x} (Cu-AlO{sub x}-Al-TaN{sub x} and Cu-TaO{sub x}-TaN{sub x}), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature T{sub C} of the TaN{sub x} film at ∼5 K down to ∼0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.

  10. Mid-infrared intersubband polaritons in dispersive metal-insulator-metal resonators

    SciTech Connect

    Manceau, J.-M. Ongarello, T.; Colombelli, R.; Zanotto, S.; Sorba, L.; Tredicucci, A.; Biasiol, G.

    2014-08-25

    We demonstrate room-temperature strong coupling between a mid-infrared (λ = 9.9 μm) intersubband transition and the fundamental cavity mode of a metal-insulator-metal resonator. Patterning of the resonator surface enables surface-coupling of the radiation and introduces an energy dispersion which can be probed with angle-resolved reflectivity. In particular, the polaritonic dispersion presents an accessible energy minimum at k = 0 where—potentially—polaritons can accumulate. We also show that it is possible to maximize the coupling of photons into the polaritonic states and—simultaneously—to engineer the position of the minimum Rabi splitting at a desired value of the in-plane wavevector. This can be precisely accomplished via a simple post-processing technique. The results are confirmed using the temporal coupled mode theory formalism and their significance in the context of the strong critical coupling concept is highlighted.

  11. Metal-insulator quantum critical point beneath the high Tc superconducting dome

    PubMed Central

    Sebastian, Suchitra E.; Harrison, N.; Altarawneh, M. M.; Mielke, C. H.; Liang, Ruixing; Bonn, D. A.; Lonzarich, G. G.; Hardy, W. N.

    2010-01-01

    An enduring question in correlated systems concerns whether superconductivity is favored at a quantum critical point (QCP) characterized by a divergent quasiparticle effective mass. Despite such a scenario being widely postulated in high Tc cuprates and invoked to explain non-Fermi liquid transport signatures, experimental evidence is lacking for a critical divergence under the superconducting dome. We use ultrastrong magnetic fields to measure quantum oscillations in underdoped YBa2Cu3O6+x, revealing a dramatic doping-dependent upturn in quasiparticle effective mass at a critical metal-insulator transition beneath the superconducting dome. Given the location of this QCP under a plateau in Tc in addition to a postulated QCP at optimal doping, we discuss the intriguing possibility of two intersecting superconducting subdomes, each centered at a critical Fermi surface instability. PMID:20304800

  12. Ambipolar Transport and Gate-Induced Superconductivity in Layered Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Shi, Wu; Ye, Jianting; Zhang, Yijing; Suzuki, Ryuji; Saito, Yu; Iwasa, Yoshihiro

    2014-03-01

    Transition metal dichalcogenides (TMDs) are well known van der Waals layered materials that are easy to be exfoliated into atomically flat nano scale flakes. Owing to high efficiency of electrical double layer (EDL) dielectrics, thin flakes of TMDs have achieved high performance ambipolar transistor operation and established metallic states with high mobility, which are ideal for inducing superconductivity. Here, we report a comprehensive study of ambipolar transport behaviors in the EDL transistors (EDLTs) of MoS2, MoSe2 and MoTe2 thin flakes down to 2 K. In comparison, MoSe2 EDLT displayed a well-balanced ambipolar transistor operation while the other two showed opposite predominance in electron and hole accumulation, respectively. By modulation of carrier densities, the metal insulator transition (MIT) was observed in both electron and hole transport measurements. Particularly, superconducting transitions were reached after the formation of metallic states in the electron side. The phase diagram of transition temperature-carrier density was established and a dome-shaped structure was confirmed, revealing a universal feature of gate-induce superconductivity in layered band insulators. Present address: University of Groningen.

  13. Structural and electronic transitions in G e2S b2T e5 induced by ion irradiation damage

    NASA Astrophysics Data System (ADS)

    Privitera, S. M. S.; Mio, A. M.; Smecca, E.; Alberti, A.; Zhang, W.; Mazzarello, R.; Benke, J.; Persch, C.; La Via, F.; Rimini, E.

    2016-09-01

    G e2S b2T e5 polycrystalline films either in the trigonal stable phase or in the metastable rock-salt structure have been irradiated with 150 keV Ar+ ions. The effects of disorder are studied by electrical, optical, and structural measurements and density functional theory (DFT) simulations. In the metastable structure, the main effect of ion irradiation is a progressive amorphization, with an optical threshold at a fluence of 3 ×1013c m-2 . For the trigonal structure, a metal-insulator transition and a crystalline transition to rock-salt structure occur prior to amorphization, which requires a fluence of 8 ×1013c m-2 . The bonds of Te atoms close to the van der Waals gaps, present in the trigonal phase and identified by Raman spectroscopy, change as a function of the disorder induced by the irradiation. Comparison with DFT simulations shows that ion irradiation leads to the gradual filling of the van der Waals gaps with displaced Ge and Sb lattice atoms, giving rise first to a metal-insulator transition (9 % of displaced atoms) correlated to the modification of the Te bonds and then induces a structural transition to the metastable rock-salt phase (15 % of displaced atoms). The data presented here not only show the possibility to tune the degree of order, and therefore the electrical properties and the structure of phase change materials by ion irradiation, but also underline the importance of the van der Waals gaps in determining the transport mechanisms and the stability of the crystalline structure.

  14. Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

    PubMed

    Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

    2015-12-01

    This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of < 115 ppm/V2 and a low leakage current density of 4.457 x 10(-11) A/cm2 at 3 V are achieved which are suitable for analog and mixed signal applications. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. This work suggests that the anodization method can offer crystalline multilayer dielectric stack required for high performance MIM capacitor.

  15. Metal-insulator-metal waveguides for particle trapping and separation.

    PubMed

    Khan, Saara A; Chang, Chia-Ming; Zaidi, Zain; Shin, Wonseok; Shi, Yu; Ellerbee Bowden, Audrey K; Solgaard, Olav

    2016-06-21

    Optical particle trapping and separation are essential techniques in the fields of biology and chemistry. In many applications, it is important to identify passive separation techniques that only rely on intrinsic forces in a system with a fixed device geometry. We present a dual-waveguide sorter that utilizes the loss of metal-insulator-metal (MIM) waveguides for completely passive particle trapping and separation and is created using a unique angle sidewall deposition process. Our experiments show that an inner Au-Si3N4-Au waveguide is able to trap particles within the propagation distance of its dominant modes and release the particles into an outer Au-H2O-Au waveguide. The outer waveguide then propels the particles and separates them by size. The separation results are accurately modeled by a first-principles, analytical model.

  16. Graphene oxide-based flexible metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Bag, A.; Hota, M. K.; Mallik, S.; Maiti, C. K.

    2013-05-01

    This work explores the fabrication of graphene oxide (GO)-based metal-insulator-metal (MIM) capacitors on flexible polyethylene terephthalate (PET) substrates. Electrical properties are studied in detail. A high capacitance density of ˜4 fF µm-2 measured at 1 MHz and permittivity of ˜6 have been obtained. A low voltage coefficient of capacitance, VCC-α, and a low dielectric loss tangent indicate the potential of GO-based MIM capacitors for RF applications. The constant voltage stressing study has shown a high reliability against degradation up to a projected period of 10 years. Degradation in capacitance of the devices on flexible substrates has been studied by bending radius down to 1 cm even up to 6000 times of repeated bending.

  17. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO x

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Antonov, I. N.; Kasatkin, A. P.; Korolev, D. S.; Belov, A. I.; Mikhaylov, A. N.; Tetel'baum, D. I.

    2016-05-01

    The change of the immitance of the metal-insulator-metal memristive structures based on SiOx, which is observed during electroforming and resistive switching, confirms the formation of conducting channels (filaments) in the insulator during forming and their rupture upon a transition of the structure to a highresistance state. The observed switching of the differential capacitance and conductivity synchronously with the switching of current (resistance) can substantially extend the functional applications of memristive devices of this type.

  18. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE PAGESBeta

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more » by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  19. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    SciTech Connect

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

  20. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    PubMed Central

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang-Wook; Podzorov, Vitaly

    2014-01-01

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. Here we report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications. PMID:25308251

  1. Direct observation of nanoscale Peltier and Joule effects at metal-insulator domain walls in vanadium dioxide nanobeams.

    PubMed

    Favaloro, Tela; Suh, Joonki; Vermeersch, Bjorn; Liu, Kai; Gu, Yijia; Chen, Long-Qing; Wang, Kevin X; Wu, Junqiao; Shakouri, Ali

    2014-05-14

    The metal to insulator transition (MIT) of strongly correlated materials is subject to strong lattice coupling, which brings about the unique one-dimensional alignment of metal-insulator (M-I) domains along nanowires or nanobeams. Many studies have investigated the effects of stress on the MIT and hence the phase boundary, but few have directly examined the temperature profile across the metal-insulating interface. Here, we use thermoreflectance microscopy to create two-dimensional temperature maps of single-crystalline VO2 nanobeams under external bias in the phase coexisting regime. We directly observe highly localized alternating Peltier heating and cooling as well as Joule heating concentrated at the M-I domain boundaries, indicating the significance of the domain walls and band offsets. Utilizing the thermoreflectance technique, we are able to elucidate strain accumulation along the nanobeam and distinguish between two insulating phases of VO2 through detection of the opposite polarity of their respective thermoreflectance coefficients. Microelasticity theory was employed to predict favorable domain wall configurations, confirming the monoclinic phase identification.

  2. Desorption induced by electronic transitions

    NASA Astrophysics Data System (ADS)

    Ageev, V. N.

    1994-10-01

    A survey is presented of the techniques and instruments used in studies of desorption induced by electronic transitions (DIET) that can be stimulated by irradiating a solid surface by electrons (ESD) or photons (PSD). The most general characteristics and aspects of this phenomenon are systematized. An analysis is made of relations between DIET and crystallographic and band structure of the substrate, the nature of adsorption bonding and specific features of desorbing particles. The main DIET models involving various electronic excitations of adsorption bonding and their relaxation as particles escape from the surface are discussed, and their predictions are compared with the available experimental data. Particular attention is focussed on the DIET models involving many-electron excitations. The various applications of DIET techniques to studies of adsorbed layers and of surface processes are considered. The radiation stability of solid surfaces and of film coatings with respect to excitation of their electronic subsystem is discussed.

  3. Fano Resonance Based on Metal-Insulator-Metal Waveguide-Coupled Double Rectangular Cavities for Plasmonic Nanosensors

    PubMed Central

    Zhang, Zhidong; Luo, Liang; Xue, Chenyang; Zhang, Wendong; Yan, Shubin

    2016-01-01

    A refractive index sensor based on metal-insulator-metal (MIM) waveguides coupled double rectangular cavities is proposed and investigated numerically using the finite element method (FEM). The transmission properties and refractive index sensitivity of various configurations of the sensor are systematically investigated. An asymmetric Fano resonance lineshape is observed in the transmission spectra of the sensor, which is induced by the interference between a broad resonance mode in one rectangular and a narrow one in the other. The effect of various structural parameters on the Fano resonance and the refractive index sensitivity of the system based on Fano resonance is investigated. The proposed plasmonic refractive index sensor shows a maximum sensitivity of 596 nm/RIU. PMID:27164101

  4. Magnetic field induced transition in vanadium spinels.

    PubMed

    Mun, E D; Chern, Gia-Wei; Pardo, V; Rivadulla, F; Sinclair, R; Zhou, H D; Zapf, V S; Batista, C D

    2014-01-10

    We study vanadium spinels AV2O4 (A = Cd,Mg) in pulsed magnetic fields up to 65 T. A jump in magnetization at μ0H≈40  T is observed in the single-crystal MgV2O4, indicating a field induced quantum phase transition between two distinct magnetic orders. In the multiferroic CdV2O4, the field induced transition is accompanied by a suppression of the electric polarization. By modeling the magnetic properties in the presence of strong spin-orbit coupling characteristic of vanadium spinels, we show that both features of the field induced transition can be successfully explained by including the effects of the local trigonal crystal field. PMID:24483929

  5. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times. PMID:27524362

  6. Novel Way to Characterize Metal-Insulator-Metal Devices via Nanoindentation: Preprint

    SciTech Connect

    Periasamy, P.; Packard, C. E.; O?Hayre, R. P.; Berry, J. J.; Parilla, P. A.; Ginley, D. S.

    2011-07-01

    Metal-Insulator-Metal (MIM) devices are crucial components for applications ranging from optical rectennas for harvesting sunlight to infrared detectors. To date, the relationship between materials properties and device performance in MIM devices is not fully understood, partly due to the difficulty in making and reproducing reliable devices. One configuration that is popular due to its simplicity and ease of fabrication is the point-contact diode where a metal tip serves as one of the metals in the MIM device. The intrinsic advantage of the point-contact configuration is that it is possible to achieve very small contact areas for the device thereby allowing very high-frequency operation. In this study, precise control over the contact area and penetration depth of an electrically conductive tip into a metal/insulator combination is achieved using a nanoindenter with in-situ electrical contact resistance measurement capabilities. A diamond probe tip, doped (degeneratively) with boron for conductivity, serves as the point contact and second 'metal' (b-Diamond) of the MIM diode. The base layer consists of Nb/Nb2O5 thin films on Si substrates and serves as the first metal /insulator combination of the MIM structure. The current-voltage response of the diodes is measured under a range of conditions to assess the validity and repeatability of the technique. Additionally, we compare the results of this technique to those acquired using a bent-wire approach and find that Nb/Nb2O5/b-Diamond MIM devices show an excellent asymmetry (60-300) and nonlinearity values (~6-9). This technique shows great promise for screening metal-insulator combinations for performance without the uncertainty that stems from a typical bent-wire point-contact.

  7. Contemporary Research of Dynamically Induced Phase Transitions

    NASA Astrophysics Data System (ADS)

    Hull, Lawrence

    2015-06-01

    Dynamically induced phase transitions in metals, within the present discussion, are those that take place within a time scale characteristic of the shock waves and any reflections or rarefactions involved in the loading structure along with associated plastic flow. Contemporary topics of interest include the influence of loading wave shape, the effect of shear produced by directionality of the loading relative to the sample dimensions and initial velocity field, and the loading duration (kinetic effects, hysteresis) on the appearance and longevity of a transformed phase. These topics often arise while considering the loading of parts of various shapes with high explosives, are typically two or three-dimensional, and are often selected because of the potential of the transformed phase to significantly modify the motion. In this paper, we look at current work on phase transitions in metals influenced by shear reported in the literature, and relate recent work conducted at Los Alamos on iron's epsilon phase transition that indicates a significant response to shear produced by reflected elastic waves. A brief discussion of criteria for the occurrence of stress induced phase transitions is provided. Closing remarks regard certain physical processes, such as fragmentation and jet formation, which may be strongly influenced by phase transitions. Supported by the DoD/DOE Joint Munitions Technology Development Program.

  8. Large epitaxial bi-axial strain induces a Mott-like phase transition in VO{sub 2}

    SciTech Connect

    Kittiwatanakul, Salinporn; Wolf, Stuart A.; Lu, Jiwei

    2014-08-18

    The metal insulator transition (MIT) in vanadium dioxide (VO{sub 2}) has been an important topic for recent years. It has been generally agreed upon that the mechanism of the MIT in bulk VO{sub 2} is considered to be a collaborative Mott-Peierls transition, however, the effect of strain on the phase transition is much more complicated. In this study, the effect of the large strain on the properties of VO{sub 2} films was investigated. One remarkable result is that highly strained epitaxial VO{sub 2} thin films were rutile in the insulating state as well as in the metallic state. These highly strained VO{sub 2} films underwent an electronic phase transition without the concomitant Peierls transition. Our results also show that a very large tensile strain along the c-axis of rutile VO{sub 2} resulted in a phase transition temperature of ∼433 K, much higher than in any previous report. Our findings elicit that the metal insulator transition in VO{sub 2} can be driven by an electronic transition alone, rather the typical coupled electronic-structural transition.

  9. A simple metal-insulator criterion for the doped Mott-Hubbard materials

    NASA Astrophysics Data System (ADS)

    Gavrichkov, Vladimir A.

    2015-04-01

    A simple metal-insulator criterion for doped Mott-Hubbard materials has been derived. Its readings are closely related to the orbital and spin nature of the ground states of the unit cell. The available criterion readings (metal or insulator) in the paramagnetic phase reveal the possibility of the insulator state of doped materials with the forbidden first removal electron states. According to its physical meaning, the result is similar to the Wilson's criterion in itinerant electron systems. The application of the criterion to high-Tc cuprates is discussed.

  10. Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

    PubMed

    Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

    2014-10-15

    We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

  11. Boron carbon nitride based metal-insulator-metal UV detectors for harsh environment applications.

    PubMed

    Prakash, Adithya; Nehate, Shraddha D; Sundaram, Kalpathy B

    2016-09-15

    A metal-insulator-metal (MIM) structure using boron carbon nitride (BCN) was tested for its UV detection capability. Since BCN is one of the hardest and chemically robust materials, it is expected to be a potential choice for a UV detector in extreme and harsh conditions. The BCN thin films were deposited using a dual target RF magnetron sputtering process. The optoelectronic performance of the BCN MIM devices were examined through UV photocurrent measurements. A UV photocurrent of two orders of magnitude higher with respect to dark current was achieved in the range of -3 to 3 V. PMID:27628369

  12. A Refractive Index Sensor Based on a Metal-Insulator-Metal Waveguide-Coupled Ring Resonator

    PubMed Central

    Yan, Shu-Bin; Luo, Liang; Xue, Chen-Yang; Zhang, Zhi-Dong

    2015-01-01

    A refractive index sensor composed of two straight metal-insulator-metal waveguides and a ring resonator is presented. One end of each straight waveguide is sealed and the other end acts as port. The transmission spectrum and magnetic field distribution of this sensor structure are simulated using finite-difference time-domain method (FDTD). The results show that an asymmetric line shape is observed in the transmission spectrum, and that the transmission spectrum shows a filter-like behavior. The quality factor and sensitivity are taken to characterize its sensing performance and filter properties. How structural parameters affect the sensing performance and filter properties is also studied. PMID:26610491

  13. Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, J. W.; Liao, M. Y.; Imura, M.; Matsumoto, T.; Shibata, N.; Ikuhara, Y.; Koide, Y.

    2015-09-01

    Normally on/off operation in hydrogenated diamond (H-diamond) metal-insulator-semiconductor field-effect transistors (MISFETs) is reproducibly controlled by annealing at 180 °C. The transfer characteristics of the MISFETs reveal that the threshold gate voltage changes from 0.8 ± 0.1 to -0.5 ± 0.1 V after annealing, which indicates the MISFETs switch from normally on to normally off operation. Annealing also shifts the flat-band voltage in the capacitance-voltage curve of MIS capacitors from zero to -0.47 V. The mechanism behind the switch of normally on/off characteristics induced by annealing is explained by a change of transfer doping as follows. Adsorbed acceptors at the insulator/H-diamond interface allow the holes to accumulate in the H-diamond channel layer, so the MISFETs before annealing show normally on characteristics. Annealing causes loss of the adsorbed acceptors or provides compensatory positive charge in the insulator oxide, so the hole density in the H-diamond channel layer decreases markedly, and the MISFETs show normally off characteristics.

  14. Fingerprints of the field-induced Berezinskii-Kosterlitz-Thouless transition in quasi-two-dimensional quantum magnets

    NASA Astrophysics Data System (ADS)

    Orendáčová, Alžbeta

    The two-dimensional (2d) easy-plane (XY) model provides a prototypical description of 2d systems exhibiting topological excitations, which drive the Berezinskii-Kosterlitz-Thouless (BKT) transition that occurs in 2d superfluids, electron plasmas, Josephson junction arrays, ultracold atomic 2d Bose gasses, etc. The excitations in the 2d XY model are spin waves and vortices. In the BKT scenario, at low temperatures, all vortices (V) and antivortices (AV) are bound to V-AV pairs, and spin waves dominate in this quasi-long-range-ordered phase with an infinite correlation length, ξ, and an algebraic decay of correlations. At a critical temperature, TBKT, the V-AV pairs start to unbind, driving the transition to a free vortex phase above TBKT, characterized by an exponential divergence of ξ. Vortices remain stable also in quantum 2d anisotropic Heisenberg systems with a very weak XY anisotropy. The BKT scenario appears even in 2d isotropic Heisenberg magnets due to frustration or an external magnetic field. I will focus on quasi-2d spin 1/2 Heisenberg antiferromagnets with extremely weak spin anisotropy. These highly anisotropic layered Cu(II) organo-metallic insulators with relatively low saturation fields, about 6 T, enabled a comprehensive study in a wide range of magnetic fields and temperatures. A response of all compounds to the application of a magnetic field mimics 2d behavior with fingerprints of a field-induced Berezinskii-Kosterlitz-Thouless phase transition. ITMS 26220120005, VEGA 1/0143/13 and APVV-14-0073 are acknowledged for a financial support.

  15. Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds

    SciTech Connect

    Kim, Jeongwoo; Jhi, Seung-Hoon

    2015-05-21

    The mechanism for the fast switching between amorphous, metastable, and crystalline structures in chalcogenide phase-change materials has been a long-standing puzzle. Based on first-principles calculations, we study the atomic and electronic properties of metastable Ge{sub 2}Sb{sub 2}Te{sub 5} and investigate the atomic disorder to understand the transition between crystalline hexagonal and cubic structures. In addition, we study the topological insulating property embedded in these compounds and its evolution upon structural changes and atomic disorder. We also discuss the role of the surface-like states arising from the topological insulating property in the metal-insulator transition observed in the hexagonal structure.

  16. Shear induced phase transitions induced in edible fats

    NASA Astrophysics Data System (ADS)

    Mazzanti, Gianfranco; Welch, Sarah E.; Marangoni, Alejandro G.; Sirota, Eric B.; Idziak, Stefan H. J.

    2003-03-01

    The food industry crystallizes fats under different conditions of temperature and shear to obtain products with desired crystalline phases. Milk fat, palm oil, cocoa butter and chocolate were crystallized from the melt in a temperature controlled Couette cell. Synchrotron x-ray diffraction studies were conducted to examine the role of shear on the phase transitions seen in edible fats. The shear forces on the crystals induced acceleration of the alpha to beta-prime phase transition with increasing shear rate in milk fat and palm oil. The increase was slow at low shear rates and became very strong above 360 s-1. In cocoa butter the acceleration between beta-prime-III and beta-V phase transition increased until a maximum of at 360 s-1, and then decreased, showing competition between enhanced heat transfer and viscous heat generation.

  17. Magnetism and metal-insulator transition in oxygen deficient SrTiO3

    NASA Astrophysics Data System (ADS)

    Lopez-Bezanilla, Alejandro; Ganesh, P.; Littlewood, Peter

    2015-03-01

    We report new findings in the electronic structure and magnetism of oxygen vacancies in SrTiO3. By means of first-principles calculations we show that the appearance of magnetism in oxygen-deficient SrTiO3 is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. While an isolated vacancy behaves as a non-magnetic double donor, manipulation of the doping conditions allows the stability of a single donor state with emergent local moments. Strong local lattice distortions enhance the binding of this state. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient SrTiO3, which may have important implications in the design of switchable magneto-optic devices. AL-B and PBL were supported by DOE-BES under Contract No. DE-AC02-06CH11357. PG was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT- Battelle, LLC, for the US Department of Energy.

  18. Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces.

    PubMed

    Zhao, J Z; Fan, W; Verstraete, M J; Zanolli, Z; Fan, J; Yang, X B; Xu, H; Tong, S Y

    2016-09-01

    Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (101[over ¯]0) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls's description. We predict that this type of insulating state should be visible in the partially hydrogenated (101[over ¯]0) surface of many wurtzite compounds. PMID:27661702

  19. Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO3

    DOE PAGESBeta

    Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

    2015-09-08

    First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance themore » binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.« less

  20. The Two-Commponent Model and 2d Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Castner, Theodore G.

    2004-03-01

    Fermi liquid theory for the 2d MIT is extended to include the soft correlation gap (CG) in the density-of-states N(E) from carrier interactions [N(E)α(E-E_F)^t] producing a minimum in N(E) at E_F. The results are consistent with the scaling form g=g_cexp(xT_o/T) in a limited T-regime, but not as Tarrow0 ruling out the perfect conductor scenario. The two-component model of itinerant plus localized electrons n_i+n_loc=n=n_c(1+x) for n>nc is an essential feature and allows a full explanation of the T-dependence of the metallic resistivity ratio ρ_i(T)/ρ_i(0) [ρ_i= 1/(σ-σ_c)] including the maximum at T_max. The results explain the Hanein et al. data^1 for p-type GaAs and show p_i(T)/p_i(0)=1+T/T_phi in a restricted T-range where T_phi=xTc [T_c=E_c/k, E_c=mobility edge] as x=p/p_c-1 goes to 0. The correction to EF from the soft CG [of width |Delta_c] yields a constant ratio E_F/Δc as x goes to 0. The origin of the nonuniversal gc [ρc at x=0] and implications for the beta function β(g)=ln(g/g_c) and single particle scaling will be discussed. 1. Y. Hanein et al., PRL80, 1288 (1998);Phys.Rev.B58, R13338 (1998).

  1. Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

    DOE PAGESBeta

    Shen, Xuan; Qiu, Xiangbiao; Su, Dong; Zhou, Shengqiang; Li, Aidong; Wu, Di

    2015-01-06

    Transport characteristics of ultrathin SrRuO₃ films, deposited epitaxially on TiO₂-terminated SrTiO₃ (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variablemore » range hopping model, indicating a strongly localized state. As a result, magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction.« less

  2. High-field Overhauser dynamic nuclear polarization in silicon below the metal-insulator transition.

    PubMed

    Dementyev, Anatoly E; Cory, David G; Ramanathan, Chandrasekhar

    2011-04-21

    Single crystal silicon is an excellent system to explore dynamic nuclear polarization (DNP), as it exhibits a continuum of properties from metallic to insulating as a function of doping concentration and temperature. At low doping concentrations DNP has been observed to occur via the solid effect, while at very high-doping concentrations an Overhauser mechanism is responsible. Here we report the hyperpolarization of (29)Si in n-doped silicon crystals, with doping concentrations in the range of (1-3) × 10(17) cm(-3). In this regime exchange interactions between donors become extremely important. The sign of the enhancement in our experiments and its frequency dependence suggest that the (29)Si spins are directly polarized by donor electrons via an Overhauser mechanism within exchange-coupled donor clusters. The exchange interaction between donors only needs to be larger than the silicon hyperfine interaction (typically much smaller than the donor hyperfine coupling) to enable this Overhauser mechanism. Nuclear polarization enhancement is observed for a range of donor clusters in which the exchange energy is comparable to the donor hyperfine interaction. The DNP dynamics are characterized by a single exponential time constant that depends on the microwave power, indicating that the Overhauser mechanism is a rate-limiting step. Since only about 2% of the silicon nuclei are located within 1 Bohr radius of the donor electron, nuclear spin diffusion is important in transferring the polarization to all the spins. However, the spin-diffusion time is much shorter than the Overhauser time due to the relatively weak silicon hyperfine coupling strength. In a 2.35 T magnetic field at 1.1 K, we observed a DNP enhancement of 244 ± 84 resulting in a silicon polarization of 10.4 ± 3.4% following 2 h of microwave irradiation.

  3. Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO3

    SciTech Connect

    Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

    2015-09-08

    First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance the binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.

  4. Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces

    NASA Astrophysics Data System (ADS)

    Zhao, J. Z.; Fan, W.; Verstraete, M. J.; Zanolli, Z.; Fan, J.; Yang, X. B.; Xu, H.; Tong, S. Y.

    2016-09-01

    Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (10 1 ¯0 ) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls's description. We predict that this type of insulating state should be visible in the partially hydrogenated (10 1 ¯0 ) surface of many wurtzite compounds.

  5. Does sex induce a phase transition?

    NASA Astrophysics Data System (ADS)

    de Oliveira, P. M. C.; Moss de Oliveira, S.; Stauffer, D.; Cebrat, S.; Pękalski, A.

    2008-05-01

    We discovered a dynamic phase transition induced by sexual reproduction. The dynamics is a pure Darwinian rule applied to diploid bit-strings with both fundamental ingredients to drive Darwin's evolution: (1) random mutations and crossings which act in the sense of increasing the entropy (or diversity); and (2) selection which acts in the opposite sense by limiting the entropy explosion. Selection wins this competition if mutations performed at birth are few enough, and thus the wild genotype dominates the steady-state population. By slowly increasing the average number m of mutations, however, the population suddenly undergoes a mutational degradation precisely at a transition point mc. Above this point, the “bad” alleles (represented by 1-bits) spread over the genetic pool of the population, overcoming the selection pressure. Individuals become selectively alike, and evolution stops. Only below this point, m < mc, evolutionary life is possible. The finite-size-scaling behaviour of this transition is exhibited for large enough “chromosome” lengths L, through lengthy computer simulations. One important and surprising observation is the L-independence of the transition curves, for large L. They are also independent on the population size. Another is that mc is near unity, i.e. life cannot be stable with much more than one mutation per diploid genome, independent of the chromosome length, in agreement with reality. One possible consequence is that an eventual evolutionary jump towards larger L enabling the storage of more genetic information would demand an improved DNA copying machinery in order to keep the same total number of mutations per offspring.

  6. Nonequilibrium theory of a hot-electron bolometer with normal metal-insulator-superconductor tunnel junction

    SciTech Connect

    Golubev, Dmitri; Kuzmin, Leonid

    2001-06-01

    The operation of the hot-electron bolometer with normal metal-insulator-superconductor (NIS) tunnel junction as a temperature sensor is analyzed theoretically. The responsivity and the noise equivalent power (NEP) of the bolometer are obtained numerically for typical experimental parameters. Relatively simple approximate analytical expressions for these values are derived. The time constant of the device is also found. We demonstrate that the effect of the electron cooling by the NIS junction, which serves as a thermometer, can improve the sensitivity. This effect is also useful in the presence of the finite background power load. We discuss the effect of the correlation of the shot noise and the heat flow noise in the NIS junction. {copyright} 2001 American Institute of Physics.

  7. Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides.

    PubMed

    Zhu, Shiyang; Lo, G Q; Kwong, D L

    2013-04-01

    An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-μm-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-κ dielectric as the insulator, respectively.

  8. Amplification of hot electron flow by the surface plasmon effect on metal-insulator-metal nanodiodes.

    PubMed

    Lee, Changhwan; Nedrygailov, Ievgen I; Lee, Young Keun; Ahn, Changui; Lee, Hyosun; Jeon, Seokwoo; Park, Jeong Young

    2015-11-01

    Au-TiO2-Ti nanodiodes with a metal-insulator-metal structure were used to probe hot electron flows generated upon photon absorption. Hot electrons, generated when light is absorbed in the Au electrode of the nanodiode, can travel across the TiO2, leading to a photocurrent. Here, we demonstrate amplification of the hot electron flow by (1) localized surface plasmon resonance on plasmonic nanostructures fabricated by annealing the Au-TiO2-Ti nanodiodes, and (2) reducing the thickness of the TiO2. We show a correlation between changes in the morphology of the Au electrodes caused by annealing and amplification of the photocurrent. Based on the exponential dependence of the photocurrent on TiO2 thickness, the transport mechanism for the hot electrons across the nanodiodes is proposed. PMID:26451470

  9. Amplification of hot electron flow by the surface plasmon effect on metal-insulator-metal nanodiodes

    NASA Astrophysics Data System (ADS)

    Lee, Changhwan; Nedrygailov, Ievgen I.; Lee, Young Keun; Ahn, Changui; Lee, Hyosun; Jeon, Seokwoo; Park, Jeong Young

    2015-11-01

    Au-TiO2-Ti nanodiodes with a metal-insulator-metal structure were used to probe hot electron flows generated upon photon absorption. Hot electrons, generated when light is absorbed in the Au electrode of the nanodiode, can travel across the TiO2, leading to a photocurrent. Here, we demonstrate amplification of the hot electron flow by (1) localized surface plasmon resonance on plasmonic nanostructures fabricated by annealing the Au-TiO2-Ti nanodiodes, and (2) reducing the thickness of the TiO2. We show a correlation between changes in the morphology of the Au electrodes caused by annealing and amplification of the photocurrent. Based on the exponential dependence of the photocurrent on TiO2 thickness, the transport mechanism for the hot electrons across the nanodiodes is proposed.

  10. Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

    PubMed

    Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

    2016-03-01

    We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination. PMID:26886870

  11. Detuned Plasmonic Bragg Grating Sensor Based on a Defect Metal-Insulator-Metal Waveguide

    PubMed Central

    Qu, Shinian; Song, Ci; Xia, Xiushan; Liang, Xiuye; Tang, Baojie; Hu, Zheng-Da; Wang, Jicheng

    2016-01-01

    A nanoscale Bragg grating reflector based on the defect metal-insulator-metal (MIM) waveguide is developed and numerically simulated by using the finite element method (FEM). The MIM-based structure promises a highly tunable broad stop-band in transmission spectra. The narrow transmission window is shown to appear in the previous stop-band by changing the certain geometrical parameters. The central wavelengths can be controlled easily by altering the geographical parameters. The development of surface plasmon polarition (SPP) technology in metallic waveguide structures leads to more possibilities of controlling light at deep sub-wavelengths. Its attractive ability of breaking the diffraction limit contributes to the design of optical sensors. PMID:27240381

  12. Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

    SciTech Connect

    Alimardani, Nasir; Conley, John F.

    2014-08-25

    Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta{sub 2}O{sub 5} via defect based conduction before tunneling directly through the Al{sub 2}O{sub 3}, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature.

  13. Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

    PubMed

    Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

    2016-03-01

    We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.

  14. A simple formulation for magnetoresistance in metal-insulator granular films with increased current

    NASA Astrophysics Data System (ADS)

    Boff, M. A. S.; Canto, B.; Baibich, M. N.; Pereira, L. G.

    2013-02-01

    We studied the tunnel magnetoresistance in metal/insulator granular films when the applied current is varied. The tunnel magnetoresistance shows a strong modification related to a non-Ohmic behaviour of theses materials. It was verified that spin-dependent tunnelling is the main mechanism for magnetoresistance at low applied current. However, when the current is high, another mechanism gets to be important: it is independent of the magnetization and is associated to variable range hopping between metallic grains. In this work, we propose a simple modification of Inoue and Maekawa's model for tunnelling magnetoresistance in granulars, rewriting the expression for resistance as a function of magnetic field and temperature, also taking into account the two different contributions.

  15. A four-port plasmonic quasi-circulator based on metal-insulator-metal waveguides.

    PubMed

    Wen, Kunhua; Yan, Lianshan; Pan, Wei; Luo, Bin; Guo, Zhen; Guo, Yinghui

    2012-12-17

    A metal-insulator-metal (MIM)-based four-port quasi-circulator consisting of four bus waveguides and eight narrow inside/outside slits is proposed without using nonreciprocity. Once the input port is defined, only a specific output port could be obtained by proper the design of parameters of the waveguides and slits. Simulation results based on finite-different time-domain (FDTD) method demonstrate that the transmittance at the center wavelength of the appropriate output port can reach 0.63 while those of the other two output ports are lower than 0.06. Through adjusting the slits spacing or optimizing the insulator material in the slits, the isolation of the circulator could be further improved with a slight sacrifice of the transmission. Such structure could also be used for wavelength demultiplexing with the center wavelength determined by the length of the bus waveguides and slits.

  16. Andreev Reflections in Micrometer-Scale Normal Metal-Insulator-Superconductor Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Lowell, Peter J.; O'Neil, Galen C.; Underwood, Jason M.; Ullom, Joel N.

    2011-11-01

    Understanding the subgap behavior of Normal metal-Insulator-Superconductor (NIS) tunnel junctions is important in order to be able to accurately model the thermal properties of the junctions. Hekking and Nazarov (Phys. Rev. B 49:6847, 1994) developed a theory in which NIS subgap current in thin-film structures can be modeled by multiple Andreev reflections. In their theory, the current due to Andreev reflections depends on the junction area and the junction resistance area product. We have measured the current due to Andreev reflections in NIS tunnel junctions for various junction sizes and junction resistance area products and found that the multiple reflection theory is in agreement with our data.

  17. Optical magnetism and plasmonic Fano resonances in metal-insulator-metal oligomers.

    PubMed

    Verre, R; Yang, Z J; Shegai, T; Käll, M

    2015-03-11

    The possibility of achieving optical magnetism at visible frequencies using plasmonic nanostructures has recently been a subject of great interest. The concept is based on designing structures that support plasmon modes with electron oscillation patterns that imitate current loops, that is, magnetic dipoles. However, the magnetic resonances are typically spectrally narrow, thereby limiting their applicability in, for example, metamaterial designs. We show that a significantly broader magnetic response can be realized in plasmonic pentamers constructed from metal-insulator-metal (MIM) sandwich particles. Each MIM unit acts as a magnetic meta-atom and the optical magnetism is rendered quasi-broadband through hybridization of the in-plane modes. We demonstrate that scattering spectra of individual MIM pentamers exhibit multiple Fano resonances and a broad subradiant spectral window that signals the magnetic interaction and a hierarchy of coupling effects in these intricate three-dimensional nanoparticle oligomers.

  18. Microrefrigeration by a pair of normal metal/insulator/superconductor junctions

    NASA Technical Reports Server (NTRS)

    Leivo, M. M.; Pekola, J. P.; Averin, D. V.

    1995-01-01

    We suggest and demonstrate experimentally that two normal metal/insulator/superconductor (NIS) tunnel junctions combined in series to form a symmetric SINIS structure can operate as an efficient Peltier refrigerator. Specifically, it is shown that the SINIS structure with normal-state junction resistences of 1.0 and 1.1 kOmega is capable of reaching a temperature of about 100 mK starting from 300 mK. We estimate the corresponding cooling power to be 1.5 pW per total junction area of 0.8 micrometers(exp 2) at T = 300 mK. This cooling power density implies that scaling of junction area up to about 1 mm(exp 2) should bring the cooling power into the microW range.

  19. Interfacial thermal conductance across metal-insulator/semiconductor interfaces due to surface states

    NASA Astrophysics Data System (ADS)

    Lu, Tingyu; Zhou, Jun; Nakayama, Tsuneyoshi; Yang, Ronggui; Li, Baowen

    2016-02-01

    We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev. Lett. 68, 1563 (1992), 10.1103/PhysRevLett.68.1563] and most recently by Hohensee et al. [Nat. Commun. 6, 6578 (2015), 10.1038/ncomms7578].

  20. Investigation on Photoelectric Behavior of Metal-Insulator-Semiconductor Structure Based on Titania Nanotubes Arrays

    NASA Astrophysics Data System (ADS)

    Wang, Lili; Panaitescu, Eugen; Richter, Christiaan; Menon, Latika

    2014-03-01

    Titanium dioxide (TiO2) has attracted great interest as an inexpensive, earth-abundant and environment-friendly anode material for next generation photovoltaic devices and the metal-insulator-semiconductor (MIS) concept is one of the most promising approaches for improving solar cell cost effectiveness (in /W). We investigated hybrid MIS structures of semiconducting ordered titania nanotube arrays integrated with insulating iron oxide or copper oxide layers and metallic copper. The morphological and structural properties of the samples were analyzed by scanning and transmission electron microscopy, energy-dispersive X-ray spectroscopy with elemental mapping, and X-ray diffraction. The nanotubular morphology represents a step change from the current thin film approach, providing significantly larger surface area while facilitating the charge separation and electron transport. Photoelectric behavior of the new structures was estimated by transient response, quantum efficiency and spectral response, and a solar simulator was used for recording the photovoltaic response.

  1. Stress induced phase transitions in silicon

    NASA Astrophysics Data System (ADS)

    Budnitzki, M.; Kuna, M.

    2016-10-01

    Silicon has a tremendous importance as an electronic, structural and optical material. Modeling the interaction of a silicon surface with a pointed asperity at room temperature is a major step towards the understanding of various phenomena related to brittle as well as ductile regime machining of this semiconductor. If subjected to pressure or contact loading, silicon undergoes a series of stress-driven phase transitions accompanied by large volume changes. In order to understand the material's response for complex non-hydrostatic loading situations, dedicated constitutive models are required. While a significant body of literature exists for the dislocation dominated high-temperature deformation regime, the constitutive laws used for the technologically relevant rapid low-temperature loading have severe limitations, as they do not account for the relevant phase transitions. We developed a novel finite deformation constitutive model set within the framework of thermodynamics with internal variables that captures the stress induced semiconductor-to-metal (cd-Si → β-Si), metal-to-amorphous (β-Si → a-Si) as well as amorphous-to-amorphous (a-Si → hda-Si, hda-Si → a-Si) transitions. The model parameters were identified in part directly from diamond anvil cell data and in part from instrumented indentation by the solution of an inverse problem. The constitutive model was verified by successfully predicting the transformation stress under uniaxial compression and load-displacement curves for different indenters for single loading-unloading cycles as well as repeated indentation. To the authors' knowledge this is the first constitutive model that is able to adequately describe cyclic indentation in silicon.

  2. Temperature-Induced and Photo-Induced Phase Transition in a BistableMetal-Cyanide Polymer

    NASA Astrophysics Data System (ADS)

    Tokoro, Hiroko; Ohkoshi, Shin-ichi

    Studies that are related to thermal-induced phase transition and photo-induced phase transition are important issues in the field of solid state science. Rubidium manganese hexacyanoferrate RbMn[Fe(CN)6], one of the Prussian blue analogs, is a suitable system for observing thermal-induced and photo-induced phase transitions since this compound is a mixed-valence compound that has a strong cooperativity due to the CN ligand bridges. Here, we describe the crystal structure, magnetic properties, thermal-induced phase transition, and photo-induced phase collapse and photomagnetic effect based on photo-induced phase transition of RbMn[Fe(CN)6].

  3. History of desorption induced by electronic transitions

    NASA Astrophysics Data System (ADS)

    Madey, Theodore E.

    1994-01-01

    Desorption induced by electronic transitions (DIET) encompasses electron- and photon-stimulated desorption (ESD and PSD) of atoms, molecules and ions from surfaces. In this paper, we focus on the key experimental and theoretical developments that have led to a fundamental understanding of DIET processes. We emphasize the effects of ionizing radiation, i.e., electrons and photons with energies ≳ 10 eV. The first DIET studies were occasioned mainly by the observation of anomalous peaks in mass spectrometers and spurious signals in ionization gauges. These observations were followed in the early 1960's by systematic studies of Redhead, and Menzel and Gomer, who independently proposed a Franck-Condon excitation model for electron-stimulated desorption of ions and neutrals from surfaces. In the years after this seminal work, ESD and PSD developed as fields of active interest to surface scientists. In addition to providing insights into the fundamental mechanisms linking atomic motion and electronic energy dissipation at surfaces, DIET investigations are continuing to impact upon radiation damage processes in areas as diverse as X-ray optics, semiconductor electronics, surface analysis and synthesis of molecules in interplanetary space.

  4. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

    SciTech Connect

    Liu, J. W.; Liao, M. Y.; Imura, M.; Watanabe, E.; Oosato, H.; Koide, Y.

    2014-08-25

    A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO{sub 3} layer and a thin atomic-layer-deposited Al{sub 2}O{sub 3} buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be −40.7 mA·mm{sup −1}, 13.2 ± 0.1 mS·mm{sup −1}, and −3.1 ± 0.1 V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to −10.0 V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

  5. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry.

    PubMed

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  6. Widely tunable SPP bandgap in a nonlinear metal-insulator-metal waveguide.

    PubMed

    Zhou, Fei; Liu, Ye; Cai, Weiping

    2014-12-01

    In this article, we propose a novel kind of widely tunable surface plasmon polaritons (SPP) bandgap in a Kerr nonlinear metal-insulator-metal waveguide. By two identical gratings, the pump beam is coupled to two opposing SPP waves, which interfere with each other and results in SPP standing wave in the region between the two gratings. The refractive index of the Kerr nonlinear material is then periodically modulated by the SPP standing wave, and a SPP bandgap is formed. The position of the SPP bandgap can be tuned from 1.4 μm to 1.75 μm by adjusting the pump wavelength, and the relationship between the transmittance contrast of the bandgap and the pump power is also studied. Comparing with existing methods that directly modulate the refractive index (RI) or the width of the waveguide, in our work, the periodic modulation of the RI comes from the interference of the pump light, which can greatly simplify the fabrication. This work may find applications in the design of novel nonlinear devices for future all-optical integrated circuits.

  7. Characterizations of realized metal-insulator-silicon-insulator-metal waveguides and nanochannel fabrication via insulator removal.

    PubMed

    Kwon, Min-Suk; Shin, Jin-Soo; Shin, Sang-Yung; Lee, Wan-Gyu

    2012-09-24

    We investigate experimentally metal-insulator-silicon-insulator-metal (MISIM) waveguides that are fabricated by using fully standard CMOS technology. They are hybrid plasmonic waveguides, and they have a feature that their insulator is replaceable with functional material. We explain a fabrication process for them and discuss fabrication results based on 8-inch silicon-on-insulator wafers. We measured the propagation characteristics of the MISIM waveguides that were actually fabricated to be connected to Si photonic waveguides through symmetric and asymmetric couplers. When incident light from an optical source has transverse electric (TE) polarization and its wavelength is 1318 or 1554 nm, their propagation losses are between 0.2 and 0.3 dB/μm. Excess losses due to the symmetric couplers are around 0.5 dB, which are smaller than those due to the asymmetric couplers. Additional measurement results indicate that the MISIM waveguide supports a TE-polarized hybrid plasmonic mode. Finally, we explain a process of removing the insulator without affecting the remaining MISIM structure to fabricate ~30-nm-wide nanochannels which may be filled with functional material.

  8. Photoelectric energy conversion of plasmon-generated hot carriers in metal-insulator-semiconductor structures.

    PubMed

    García de Arquer, F Pelayo; Mihi, Agustín; Kufer, Dominik; Konstantatos, Gerasimos

    2013-04-23

    Plasmonic excitation in metals has received great attention for light localization and control of light-matter interactions at the nanoscale with a plethora of applications in absorption enhancement, surface-enhanced Raman scattering, or biosensing. Electrically active plasmonic devices, which had remained underexplored, have recently become a growing field of interest. In this report we introduce a metal-insulator-semiconductor heterostructure for plasmo-electric energy conversion, a novel architecture to harvest hot-electrons derived from plasmonic excitations. We demonstrate external quantum efficiency (EQE) of 4% at 460 nm using a Ag nanostructured electrode and EQE of 1.3% at 550 nm employing a Au nanostructured electrode. The insulator interfacial layer has been found to play a crucial role in interface passivation, a requisite in photovoltaic applications to achieving both high open-circuit voltages (0.5 V) and fill-factors (0.5), but its introduction simultaneously modifies hot-electron injection and transport. We investigate the influence passivation has on these processes for different material configurations, and characterize different types of transport depending on the initial plasmon energy band, reporting power conversion efficiencies of 0.03% for nanopatterned silver electrodes. PMID:23495769

  9. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  10. Analytical and experimental investigation of electrical characteristics of a metallic insulation GdBCO coil

    NASA Astrophysics Data System (ADS)

    Yang, D. G.; Choi, Y. H.; Kim, Y. G.; Song, J. B.; Lee, H. G.

    2016-03-01

    This paper presents results, experimental and analytical, of the electrical characteristics of GdBCO single-pancake coils co-wound with a brass tape as metallic insulation (MI coil). The GdBCO pancakes were subjected to sudden discharge, charge-discharge, and over-current tests. The sudden discharge and charge-discharge test results of the MI coil demonstrated that MI coils can be charged and discharged significantly faster than non-insulated coils that are wound only with GdBCO tape. In over-current tests at 150 A (1.25Ic), the MI coil exhibited better electrical behavior, i.e., self-protecting features, than its counterpart co-wound with Kapton tape, an insulator. Moreover, the experimental and analytical results are in agreement, validating the use of a concise equivalent parallel-RL circuit model for the MI coil to characterize its electrical behavior. Overall, the MI winding technique is highly promising to help build compact, mechanically robust, and self-protecting magnets composed of REBCO pancake coils. With no organic material in the winding, MI REBCO pancakes will be immune to neutron radiation damage, making the MI winding technique a viable option for fusion reactors, such as for toroidal field, poroidal field magnets, and central solenoid.

  11. Analytical and experimental investigation of electrical characteristics of a metallic insulation GdBCO coil.

    PubMed

    Yang, D G; Choi, Y H; Kim, Y G; Song, J B; Lee, H G

    2016-03-01

    This paper presents results, experimental and analytical, of the electrical characteristics of GdBCO single-pancake coils co-wound with a brass tape as metallic insulation (MI coil). The GdBCO pancakes were subjected to sudden discharge, charge-discharge, and over-current tests. The sudden discharge and charge-discharge test results of the MI coil demonstrated that MI coils can be charged and discharged significantly faster than non-insulated coils that are wound only with GdBCO tape. In over-current tests at 150 A (1.25I(c)), the MI coil exhibited better electrical behavior, i.e., self-protecting features, than its counterpart co-wound with Kapton tape, an insulator. Moreover, the experimental and analytical results are in agreement, validating the use of a concise equivalent parallel-RL circuit model for the MI coil to characterize its electrical behavior. Overall, the MI winding technique is highly promising to help build compact, mechanically robust, and self-protecting magnets composed of REBCO pancake coils. With no organic material in the winding, MI REBCO pancakes will be immune to neutron radiation damage, making the MI winding technique a viable option for fusion reactors, such as for toroidal field, poroidal field magnets, and central solenoid. PMID:27036797

  12. Elastoplasmonic interaction in metal-insulator-metal localized surface plasmon systems

    NASA Astrophysics Data System (ADS)

    Mrabti, Abdelali; Lévêque, Gaëtan; Akjouj, Abdellatif; Pennec, Yan; Djafari-Rouhani, Bahram; Nicolas, Rana; Maurer, Thomas; Adam, Pierre-Michel

    2016-08-01

    We investigate theoretically and numerically the coupling between elastic and localized surface plasmon modes in a system of gold nanocylinders separated from a thin gold film by a dielectric spacer of few nanometers thickness. That system supports plasmon modes confined in between the bottom of the nanocylinder and the top of the gold film, which arise from the formation of interference patterns by short-wavelength metal-insulator-metal propagating plasmon. First, we present the plasmonic properties of the system though computer-simulated extinction spectra and field maps associated to the different optical modes. Next, a simple analytical model is introduced, which allows to correctly reproduce the shape and wavelengths of the plasmon modes. This model is used to investigate the efficiency of the coupling between an elastic deformation and the plasmonic modes. In the last part of the paper, we present the full numerical simulations of the elastic properties of the system, and then compute the acousto-plasmonic coupling between the different plasmon modes and five acoustic modes of very different shape. The efficiency of the coupling is assessed first by evaluating the modulation of the resonance wavelength, which allows comparison with the analytical model, and finally in term of time-modulation of the transmission spectra on the full visible range, computed for realistic values of the deformation of the nanoparticle.

  13. Analytical and experimental investigation of electrical characteristics of a metallic insulation GdBCO coil.

    PubMed

    Yang, D G; Choi, Y H; Kim, Y G; Song, J B; Lee, H G

    2016-03-01

    This paper presents results, experimental and analytical, of the electrical characteristics of GdBCO single-pancake coils co-wound with a brass tape as metallic insulation (MI coil). The GdBCO pancakes were subjected to sudden discharge, charge-discharge, and over-current tests. The sudden discharge and charge-discharge test results of the MI coil demonstrated that MI coils can be charged and discharged significantly faster than non-insulated coils that are wound only with GdBCO tape. In over-current tests at 150 A (1.25I(c)), the MI coil exhibited better electrical behavior, i.e., self-protecting features, than its counterpart co-wound with Kapton tape, an insulator. Moreover, the experimental and analytical results are in agreement, validating the use of a concise equivalent parallel-RL circuit model for the MI coil to characterize its electrical behavior. Overall, the MI winding technique is highly promising to help build compact, mechanically robust, and self-protecting magnets composed of REBCO pancake coils. With no organic material in the winding, MI REBCO pancakes will be immune to neutron radiation damage, making the MI winding technique a viable option for fusion reactors, such as for toroidal field, poroidal field magnets, and central solenoid.

  14. Angular dependence of optical modes in metal-insulator-metal coupled quantum well infrared photodetector

    NASA Astrophysics Data System (ADS)

    Jing, YouLiang; Li, ZhiFeng; Li, Qian; Chen, PingPing; Zhou, XiaoHao; Wang, Han; Li, Ning; Lu, Wei

    2016-04-01

    We report the dependence of the near-field optical modes in metal-insulator-metal quantum well infrared photodetector (MIM-QWIP) on the incident angles. Three optical modes are observed and attributed to the 2nd- and the 3rd-order surface plasmon polariton (SPP) modes and the localized surface polariton (LSP) mode. In addition to the observation of a responsivity enhancement of 14 times by the LSP mode, the varying pattern of the three modes against the incident angle are revealed, in which the LSP mode is fixed while the 2nd SPP mode splits into two branches and the 3rd SPP mode red-shifts. The detailed mechanisms are analyzed and numerically simulated. The results fit the experiments very well, demonstrating the wavevector coupling effect between the incident light and the metal gratings on the SPP modes. Our work will pave the way to fully understanding the influence of incident angles on a detector's response for applying the MIM-QWIP to focal plane arrays.

  15. Magnetic modulation of surface plasmon modes in magnetoplasmonic metal-insulator-metal cavities.

    PubMed

    Ferreiro-Vila, E; García-Martín, J M; Cebollada, A; Armelles, G; González, M U

    2013-02-25

    The magnetic modulation of the surface plasmon-polariton (SPP) wavevector is experimentally and theoretically studied for the plasmonic modes excited in metal-insulator-metal (MIM) magnetoplasmonic cavities. For this purpose, Ag/SiO₂/Ag multilayers with different SiO₂ layer thickness in which a thin Co layer is positioned near the top Ag/SiO₂ interface, near the bottom SiO₂/Ag one, or near both of them, are studied. The magnetoplasmonic MIM cavities present symmetric (SM) and antisymmetric (AM) plasmonic modes, of different wavevector and electromagnetic field profiles inside the MIM cavity. We show that the magnetic SPP wavevector modulation strongly depends on which mode is considered, the cavity thickness, and the number and specific location of Co layers within the structure. With only one ferromagnetic layer, a net modulation is obtained, of higher magnitude as we reduce the SiO₂ layer thickness. The introduction of a second Co layer in the structure reduces the modulation due to the non-reciprocal character of SPP modes under an applied magnetic field. Moreover, we demonstrate that the non-reciprocal nature of the SPP modulation can be experimentally visualized in the magnetic hysteresis loops under plasmon excitation conditions by using two Co layers with different magnetization switching fields. PMID:23482025

  16. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry.

    PubMed

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  17. High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Meneghesso, Gaudenzio; Meneghini, Matteo; Silvestri, Riccardo; Vanmeerbeek, Piet; Moens, Peter; Zanoni, Enrico

    2016-01-01

    This paper presents an analysis of the high voltage trapping processes that take place in high-electron mobility transistors based on GaN, with a metal-insulator-semiconductor (MIS) structure. The study is based on combined pulsed and transient measurements, carried out with trapping voltages in the range from 50 to 500 V. The results indicate that: (i) dynamic Ron is maximum for trapping voltages between 200 and 300 V, and decreases for higher voltage levels; (ii) Ron-transient measurements reveal the presence of a dominant trap with activation energy Ea1 = 0.93 eV and of a second trap with activation energy equal to Ea2 = 0.61 eV; (iii) the deep level transient spectroscopy (DLTS) signal associated to trap Ea1 is completely suppressed for high trapping voltages (VDS = 500 V). The results are interpreted by considering that the trap Ea1 is located in the buffer, and originates from CN defects. The exposure to high drain voltages may favor the depletion of such traps, due to a field-assisted de-trapping process or to the presence of vertical leakage paths.

  18. An electrodeposited inhomogeneous metal-insulator-semiconductor junction for efficient photoelectrochemical water oxidation

    NASA Astrophysics Data System (ADS)

    Hill, James C.; Landers, Alan T.; Switzer, Jay A.

    2015-11-01

    The photoelectrochemical splitting of water into hydrogen and oxygen requires a semiconductor to absorb light and generate electron-hole pairs, and a catalyst to enhance the kinetics of electron transfer between the semiconductor and solution. A crucial question is how this catalyst affects the band bending in the semiconductor, and, therefore, the photovoltage of the cell. We introduce a simple and inexpensive electrodeposition method to produce an efficient n-Si/SiOx/Co/CoOOH photoanode for the photoelectrochemical oxidation of water to oxygen. The photoanode functions as a solid-state, metal-insulator-semiconductor photovoltaic cell with spatially non-uniform barrier heights in series with a low overpotential water-splitting electrochemical cell. The barrier height is a function of the Co coverage; it increases from 0.74 eV for a thick, continuous film to 0.91 eV for a thin, inhomogeneous film that has not reached coalescence. The larger barrier height leads to a 360 mV photovoltage enhancement relative to a solid-state Schottky barrier.

  19. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    PubMed Central

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  20. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    NASA Astrophysics Data System (ADS)

    Bullock, J.; Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-01

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n+ and p+ surfaces are passivated with SiO2/a-Si:H and Al2O3/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n+) contacts, with SiO2 thicknesses of ˜1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρc of ˜3 mΩ cm2 and a recombination current density J0c of ˜40 fA/cm2. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p+) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  1. Dual wavelength demultiplexer based on metal-insulator-metal plasmonic circular ring resonators

    NASA Astrophysics Data System (ADS)

    Rakhshani, Mohammad Reza; Mansouri-Birjandi, Mohammad Ali

    2016-06-01

    In this paper, we investigated a plasmonic demultiplexer structure based on Metal-Insulator-Metal (MIM) waveguides and circular ring resonators. In order to achieve the structure of demultiplexer, two improved ring resonators have been used, which input and outputs MIM waveguides coupled by the ring resonators. To improve the transmission efficiency, a reflector was introduced at the right end of the input and output waveguides. By substituting the ring core with dielectric, the possibility of tuning the resonance wavelength of the proposed structure is illustrated, and the effect of various parameters such as radius and refractive index in transmission efficiency is studied in detail. This is useful for the design of integrated circuits in which it is not possible to extend the dimension of the ring resonator to attain a longer resonance wavelength. Transmission efficiency and quality factor of the single ring are 84% and 110, respectively. The simulation results using finite difference time domain method shows that in the proposed demultiplexer, which is composed of two rings with different core refractive indexes, the average power efficiency, bandwidth for each output channel, and the mean value of crosstalk are estimated 80%, 17 nm, and -26.95 dB, respectively. It is revealed that the significant features of the device are high transmission efficiency, low crosstalk, high-quality factor, and tunability for desired wavelengths. Therefore, the proposed structure has the potential to be applied in plasmonic integrated circuits.

  2. Magnetic modulation of surface plasmon modes in magnetoplasmonic metal-insulator-metal cavities.

    PubMed

    Ferreiro-Vila, E; García-Martín, J M; Cebollada, A; Armelles, G; González, M U

    2013-02-25

    The magnetic modulation of the surface plasmon-polariton (SPP) wavevector is experimentally and theoretically studied for the plasmonic modes excited in metal-insulator-metal (MIM) magnetoplasmonic cavities. For this purpose, Ag/SiO₂/Ag multilayers with different SiO₂ layer thickness in which a thin Co layer is positioned near the top Ag/SiO₂ interface, near the bottom SiO₂/Ag one, or near both of them, are studied. The magnetoplasmonic MIM cavities present symmetric (SM) and antisymmetric (AM) plasmonic modes, of different wavevector and electromagnetic field profiles inside the MIM cavity. We show that the magnetic SPP wavevector modulation strongly depends on which mode is considered, the cavity thickness, and the number and specific location of Co layers within the structure. With only one ferromagnetic layer, a net modulation is obtained, of higher magnitude as we reduce the SiO₂ layer thickness. The introduction of a second Co layer in the structure reduces the modulation due to the non-reciprocal character of SPP modes under an applied magnetic field. Moreover, we demonstrate that the non-reciprocal nature of the SPP modulation can be experimentally visualized in the magnetic hysteresis loops under plasmon excitation conditions by using two Co layers with different magnetization switching fields.

  3. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  4. Random Field Driven Spatial Complexity at the Mott Transition in VO2

    NASA Astrophysics Data System (ADS)

    Carlson, Erica; Liu, Shuo; Phillabaum, Benjamin; Dahmen, Karin; Vidhyadhiraja, Narsimhamurthy; Qazilbash, Mumtaz; Basov, Dimitri

    We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

  5. Theoretical model of homogeneous metal-insulator-metal perfect multi-band absorbers for the visible spectrum

    NASA Astrophysics Data System (ADS)

    Kajtár, G.; Kafesaki, M.; Economou, E. N.; Soukoulis, C. M.

    2016-02-01

    We present a rigorous study of the perfect absorption properties of metal-insulator-metal (MIM) structures in the visible spectrum. We provide a derivation (based on the transfer matrix method) and analysis of the conditions for which the perfect absorption occurs. We show that these conditions are fulfilled when the incident wave excites the eigenmodes of the structure. The quantitative analysis allows us to design specific perfect absorbers for our needs. The analytical model is verified by rigorous simulations based on rigorous coupled wave analysis, which demonstrate also the angle and polarization insensitivity of the absorption properties of such a structure. Employing the MIM approach and results, we also investigate and demonstrate multiple perfect absorption bands and broad-band absorption in properly designed multilayer metal-insulator systems.

  6. Electric field-induced transport modulation in VO2 FETs with high-k oxide/organic parylene-C hybrid gate dielectric

    NASA Astrophysics Data System (ADS)

    Wei, Tingting; Kanki, Teruo; Fujiwara, Kohei; Chikanari, Masashi; Tanaka, Hidekazu

    2016-02-01

    We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation.

  7. Pressure-Induced Mott Transition Followed by a 24-K Superconducting Phase in BaFe2S3

    NASA Astrophysics Data System (ADS)

    Yamauchi, Touru; Hirata, Yasuyuki; Ueda, Yutaka; Ohgushi, Kenya

    2015-12-01

    We performed high-pressure study for a Mott insulator BaFe2S3 , by measuring dc resistivity and ac susceptibility up to 15 GPa. We found that the antiferromagnetic insulating state at the ambient pressure is transformed into a metallic state at the critical pressure, Pc=10 GPa , and the superconductivity with the optimum Tc=24 K emerges above Pc. Furthermore, we found that the metal-insulator transition (Mott transition) boundary terminates at a critical point around 10 GPa and 75 K. The obtained pressure-temperature (P -T ) phase diagram is similar to those of the organic and fullerene compounds; namely, BaFe2S3 is the first inorganic superconductor in the vicinity of bandwidth control type Mott transition.

  8. Barrier height distribution and dipolar relaxation in metal-insulator-semiconductor junctions with molecular insulator: Ageing effects

    NASA Astrophysics Data System (ADS)

    Fadjie-Djomkam, A. B.; Ababou-Girard, S.; Godet, C.

    2012-12-01

    Electrical transport through molecular monolayers being very sensitive to disorder effects, admittance and current density characteristics of Hg//C12H25 - n Si junctions incorporating covalently bonded n-alkyl molecular layers, were investigated at low temperature (150-300 K), in the as-grafted state and after ageing at the ambient. This comparison reveals local oxidation effects both at the submicron scale in the effective barrier height distribution and at the molecular scale in the dipolar relaxation. In the bias range dominated by thermionic emission and modified by the tunnel barrier (TB) attenuation, exp(-β0dT), where dT is the thickness of the molecular tunnel barrier and β0 is the inverse attenuation length at zero applied bias, some excess current is attributed to a distribution of low barrier height patches. Complementary methods are used to analyze the current density J(V, T) characteristics of metal-insulator-semiconductor tunnel diodes. Assuming a Gaussian distribution of barrier heights centered at qΦB provides an analytical expression of the effective barrier height, qΦEFF(T)=qΦB+(kT)β0dT-(qδΦ)2/2kT; this allows fitting of the distribution standard deviation δΦ and tunnel parameter (β0dT) over a wide temperature range. In a more realistic modeling including the voltage dependence of barrier height and circular patch area, the so-called "pinch-off" effect is described by a distribution of parameter γ =3(ΔPRP2/4)1/3, which combines interface potential modulation and patch area variations. An arbitrary distribution of γ values, fitted to low-temperature J(V) data, is equally well described by Gaussian or exponential functions. Ageing in air also increases the interface oxidation of Si substrate and affects the density of localized states near mid gap, which typically rises to the high 1011 eV-1 cm-2 range, as compared with DS < 1011 eV-1 cm-2 in the as-grafted state. The bias-independent relaxation observed near 1 kHz at low temperature

  9. Discreteness-induced transitions in multibody reaction systems.

    PubMed

    Saito, Yohei; Sughiyama, Yuki; Kaneko, Kunihiko; Kobayashi, Tetsuya J

    2016-08-01

    A decrease in system size can induce qualitatively different behavior compared to the macroscopic behavior of the corresponding large-size system. The mechanisms of this transition, which is known as the small-size transition, can be attributed to either a relative increase in the noise intensity or to the discreteness of the state space due to the small system size. The former mechanism has been intensively investigated using several toy and realistic models. However, the latter has rarely been analyzed and is sometimes confused with the former, because a toy model that extracts the essence of the discreteness-induced transition mechanism is lacking. In this work, we propose a one- and three-body reaction system as a minimal model of the discreteness-induced transition and derive the conditions under which this transition occurs in more complex systems. This work enriches our understanding of the influence of small system size on system behavior. PMID:27627279

  10. Discreteness-induced transitions in multibody reaction systems

    NASA Astrophysics Data System (ADS)

    Saito, Yohei; Sughiyama, Yuki; Kaneko, Kunihiko; Kobayashi, Tetsuya J.

    2016-08-01

    A decrease in system size can induce qualitatively different behavior compared to the macroscopic behavior of the corresponding large-size system. The mechanisms of this transition, which is known as the small-size transition, can be attributed to either a relative increase in the noise intensity or to the discreteness of the state space due to the small system size. The former mechanism has been intensively investigated using several toy and realistic models. However, the latter has rarely been analyzed and is sometimes confused with the former, because a toy model that extracts the essence of the discreteness-induced transition mechanism is lacking. In this work, we propose a one- and three-body reaction system as a minimal model of the discreteness-induced transition and derive the conditions under which this transition occurs in more complex systems. This work enriches our understanding of the influence of small system size on system behavior.

  11. Pressure induced phase transitions in ceramic compounds containing tetragonal zirconia

    SciTech Connect

    Sparks, R.G.; Pfeiffer, G.; Paesler, M.A.

    1988-12-01

    Stabilized tetragonal zirconia compounds exhibit a transformation toughening process in which stress applied to the material induces a crystallographic phase transition. The phase transition is accompanied by a volume expansion in the stressed region thereby dissipating stress and increasing the fracture strength of the material. The hydrostatic component of the stress required to induce the phase transition can be investigated by the use of a high pressure technique in combination with Micro-Raman spectroscopy. The intensity of Raman lines characteristic for the crystallographic phases can be used to calculate the amount of material that has undergone the transition as a function of pressure. It was found that pressures on the order of 2-5 kBar were sufficient to produce an almost complete transition from the original tetragonal to the less dense monoclinic phase; while a further increase in pressure caused a gradual reversal of the transition back to the original tetragonal structure.

  12. Metal-insulator-metal diodes towards THz and optical energy harvesting: Development of materials design principles

    NASA Astrophysics Data System (ADS)

    Periasamy, Prakash

    Metal-Insulator-Metal (MIM) structures are attractive candidates for high-frequency rectification applications such as THz imaging and sensors, and infrared/visible energy harvesting (rectenna) devices. This thesis develops materials selection principles to guide the choice of material pairs for MIM stacks with desired rectification performance. In particular, a first-of-its kind MIM materials space map is developed that correlates materials properties to rectification performance for different MIM combinations. The materials space diagram is generated based on systematic experimental studies that explore the role of both the metals and the insulator in the MIM stack in determining MIM device performance by evaluating the current-voltage response of a combinatorial set of MIM materials at low frequencies. A novel modified point-contact geometry is developed to rapidly examine a number of MIM material combinations. Material properties such as work function (phiM) of the metals and electron affinity (chi) of the insulator, as well as the thermodynamic chemical stability of the interface are identified as crucial elements for MIM materials selection. Investigations performed to identify the role of metals revealed that it is sufficient to choose the metals such that their Deltaphi is > ~ 300 meV to achieve desired rectification characteristics (high asymmetry and nonlinearity). Using the Nb/Nb2O5 bilayer as the model system, the asymmetry and the nonlinearity were found to be only weakly dependent on Deltaphi above ˜ 0.4 eV. A hypothesis is developed and tested that guides the insulator selection criteria. The proposed hypothesis states that, "to minimize the turn-on voltage and maximize asymmetry and nonlinearity, the electron affinity of the insulator should be close to one of the metal work function values so as to produce a low barrier height". Although the study validated the hypothesis across the material systems studied, preliminary experiments on two

  13. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ∼1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρ{sub c} of ∼3 mΩ cm{sup 2} and a recombination current density J{sub 0c} of ∼40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  14. Mass-induced transition in fermion number

    SciTech Connect

    Aragao de Carvalho, C.; Pureza, J. M.

    1989-05-15

    We show that if we increase the mass of fermions in interaction with a topological (kink) scalar background in 1+1 dimensions, the fractional fermion number of the system will eventually vanish. The transition is sharp and corresponds to the disappearance of localized states from the spectrum of a Dirac operator which is exactly solvable. Possible applications to different physical systems are discussed.

  15. Dissipation-induced transition of a simple harmonic oscillator.

    PubMed

    Shao, Zong-Qian; Li, Yu-Qi; Pan, Xiao-Yin

    2014-12-14

    We investigate the dissipation-induced transition probabilities between any two eigenstates of a simple harmonic oscillator. Using the method developed by Yu and Sun [Phys. Rev. A 49, 592 (1994)], the general analytical expressions for the transition probabilities are obtained. The special cases: transition probabilities from the ground state to the first few excited states are then discussed in detail. Different from the previous studies in the literature where only the effect of damping was considered, it is found that the Brownian motion makes the transitions between states of different parity possible. The limitations of the applicability of our results are also discussed.

  16. Pressure-induced phase transition in CrO2.

    PubMed

    Alptekin, Sebahaddin

    2015-12-01

    The ab initio constant pressure molecular dynamics technique and density functional theory with generalized gradient approximation (GGA) was used to study the pressure-induced phase transition of CrO2. The phase transition of the rutile (P42/mnm) to the orthorhombic CaCl2 (Pnnm) structure at 30 GPa was determined successfully in a constant pressure simulation. This phase transition was analyzed from total energy calculations and, from the enthalpy calculation, occurred at around 17 GPa. Structural properties such as bulk modules, lattice parameters and phase transition were compared with experimental results. The phase transition at 12 ± 3 GPa was in good agreement with experimental results, as was the phase transition from the orthorhombic CaCl2 (Pnnm) to the monoclinic (P21/c) structure also found at 35 GPa.

  17. Thermal insulator transition induced by interface scattering

    NASA Astrophysics Data System (ADS)

    Slovick, Brian A.; Krishnamurthy, Srini

    2016-10-01

    We develop an effective medium model of thermal conductivity that accounts for both percolation and interface scattering. This model accurately explains the measured increase and decrease of thermal conductivity with loading in composites dominated by percolation and interface scattering, respectively. Our model further predicts that strong interface scattering leads to a sharp decrease in thermal conductivity, or an insulator transition, at high loadings when conduction through the matrix is restricted and heat is forced to diffuse through particles with large interface resistance. The accuracy of our model and its ability to predict transitions between insulating and conducting states suggest it can be a useful tool for designing materials with low or high thermal conductivity for a variety of applications.

  18. Shock Induced Phase Transitions in Polymeric Nitrogen

    NASA Astrophysics Data System (ADS)

    Mattson, William; Balu, Radhakrishnan

    2011-06-01

    The reported density functional molecular dynamics simulations are of a shock travelling through ~4,000 atoms arranged in the equilibrium cg-N configuration equilibrated at T = 250K, P = 1 atm. Atoms within a small segment of the material given an extra velocity consistent with various desired flyer plate impact velocity. The resulting atomic trajectories show a number of complex behaviors including a phase transition to a previously unseen phase, spontaneous defect formation, and chemical reactions. The stability of the shock and the unusual properties of the above phenomena will be discussed.

  19. Shock Induced Phase Transitions in Polymeric Nitrogen

    NASA Astrophysics Data System (ADS)

    Mattson, William

    2010-03-01

    The reported density functional molecular dynamics simulations are of a shock travelling through ˜4,000 atoms arranged in the equilibrium cg-N configuration equilibrated at T = 250K, P = 1 atm. Atoms within a small segment of the material given an extra velocity consistent with various desired flyer plate impact velocity. The resulting atomic trajectories show a number of complex behaviors including a phase transition to a previously unseen phase, spontaneous defect formation, and chemical reactions. The stability of the shock and the unusual properties of the above phenomena will be discussed.

  20. Transmission characteristics and transmission line model of a metal-insulator-metal waveguide with a stub modified by cuts.

    PubMed

    Shen, Xinru; Wang, Yueke; Yan, Xin; Yuan, Lin; Sang, Tian

    2016-08-10

    We propose a structure of a metal-insulator-metal (MIM) waveguide with a stub modified by cuts. Our simulation results, conducted by the finite element method, show that the wavelengths of transmission dip vary with the position of the cuts and form the zigzag lines. A transmission line model is also presented, and it agrees with simulation results well. It is believed that our findings provide a smart way to design a plasmonic waveguide filter at the communication region based on MIM structures. PMID:27534492

  1. Anderson transition in ultracold atoms: Signatures and experimental feasibility

    SciTech Connect

    Garcia-Garcia, Antonio M.; Wang Jiao

    2006-12-15

    Kicked rotators with certain nonanalytic potentials avoid dynamical localization and undergo a metal-insulator transition. We show that typical properties of this transition are still present as the nonanalyticity is progressively smoothed out provided that the smoothing is less than a certain limiting value. We have identified a smoothing-dependent time scale such that full dynamical localization is absent and the quantum momentum distribution develops power-law tails with anomalous decay exponents as in the case of a conductor at the metal-insulator transition. We discuss under what conditions these findings may be verified experimentally by using ultracold atom techniques. It is found that ultracold atoms can indeed be utilized for the experimental investigation of the metal-insulator transition.

  2. Mössbauer spectroscopy and magnetic transition of λ-(BETS)2FeCl4

    NASA Astrophysics Data System (ADS)

    Waerenborgh, João Carlos; Rabaça, Sandra; Almeida, Manuel; Lopes, Elsa B.; Kobayashi, Akiko; Zhou, Biao; Brooks, James S.

    2010-02-01

    The compound λ-(BETS)2FeCl4 provides an effective demonstration of the interaction of π conduction electron and d -electron localized moment systems in molecular crystalline materials where antiferromagnetic insulating and magnetic field induced superconducting states can be realized. The metal-insulator transition has been thought to be cooperative, involving both the itinerant π -electron and localized d -electron spins where antiferromagnetic order appears in both systems simultaneously. However, recent specific-heat data has indicated otherwise [H. Akiba, S. Nakano, Y. Nishio, K. Kajita, B. Zhou, A. Kobayashi, and H. Kobayashi, J. Phys. Soc. Jpn. 78, 033601 (2009)]: although the π -electron system orders antiferromagnetically and produces a metal-insulator transition, a paramagnetic d -electron state remains. We report F57e Mössbauer measurements that support the paramagnetic model provided the d -electron spins remain in a fast relaxation state below the transition. From the measured hyperfine fields, we also determine the temperature dependence of the π-d electron exchange field.

  3. Stress induced reversible crystal transition in poly(butylene succinate)

    NASA Astrophysics Data System (ADS)

    Liu, Guoming; Zheng, Liuchun; Zhang, Xiuqin; Li, Chuncheng; Wang, Dujin

    2015-03-01

    The plastic deformation mechanism of semi-crystalline polymers is a long-studied topic, which is crucial for establishing structure/property relationships. For polymers with stress induced crystal transition, some open questions still need to be answered, such as on which stage of plastic deformation does the crystal transition take place, and more importantly, what happens on the lamellar structure during crystal transition. In this talk, stress-induced reversible crystal transition in poly(butylene succinate) was systematically investigated by in-situ WAXS and SAXS. A ``lamellar thickening'' phenomenon was observed during stretching, which was shown to mainly originated from the reversible crystal transition. This mechanism was shown to be valid in poly(ethylene succinate). The critical stress for the transition was measured in a series of PBS-based crystalline-amorphous multi-block copolymers. Interestingly, these PBS copolymers exhibited identical critical stress independent of amorphous blocks. The universal critical stress for crystal transition was interpreted through a single-microfibril-stretching mechanism. The work is financially supported by the National Natural Science Foundation of China (Grant No. 51203170).

  4. Nature of Pressure-induced Insulating States in Simple Metals

    NASA Astrophysics Data System (ADS)

    Naumov, Ivan; Hemley, Russell

    As experimentally established, all the alkali metals and heavy alkaline earth metals (Ca, Sr and Ba) become progressively less conductive on compression, at least up to some critical limit over a broad pressure range. Of these metals, Li and Na clearly undergo pressure-induced metal-insulator transitions, which may also be called reverse Mott transitions. Here, using group theory arguments and first-principles calculations, we show that such transitions can be understood in terms of band representations introduced by Zak. The valence bands in the insulating states are described by simple and composite band representations constructed from localized Wannier functions centered on points unoccupied by atoms. The character of the Wannier functions is closely related to the degree of s-p(-d) hybridization and reflects multi-center chemical bonding in these insulating states. The conditions under which an insulating state is allowed for structures having an integer number of atoms per primitive unit cell as well as re-entrant (i.e., metal-insulator-metal) transition sequences are detailed, resulting in predictions of semimetallic phases with flat surface states. The general principles developed are tested and applied to the alkali and alkaline earth metals, including elements where high-pressure insulating phases have been identified or reported (e.g., Li, Na, and Ca). This research was supported by EFree, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award DESC0001057.

  5. Highly efficient tunable and localized on-chip electrical plasmon source using protruded metal-insulator-metal structure.

    PubMed

    Phua, Wee Kee; Akimov, Yuriy; Wu, Lin; Chu, Hong Son; Bai, Ping; Danner, Aaron

    2016-05-16

    A compact and highly efficient tunable and localized source of propagating surface plasmon-polaritons is proposed based on a protruded metal-insulator-metal (pMIM) structure. The protrusion along a segment of the pMIM forms a nanometer gap and allows a low voltage bias to generate a localized tunneling current. The tunneling current excited plasmons can be fully coupled to the metal-insulator-metal (MIM) waveguiding segment of the pMIM without leakage and propagate a long distance as the gap in the MIM waveguiding segment is much larger than the gap in the protruded segment of the pMIM. Eigenmode and numerical analyses show that by using MIM structures as a benchmark, the pMIM structure enhances the total amount of average power that is transferred from the tunneling current into the excitation of intrinsic eigenmodes of the MIM waveguiding segment. Depending on the magnitude of the applied voltage bias, the pMIM structure supports single, dual and multi modes for a typical Au-SiO2-Au design with a 500 nm-thick SiO2. Among all excited modes, the single mode operation allows highly efficient excitation of long travelling surface plasmon-polaritons (SPPs) of up to 30 µm. The electrical excitation of SPPs using pMIM structures opens up the possibility of integrating plasmon sources into nanoscale optoelectronic circuits to facilitate on-chip data communications.

  6. Highly efficient tunable and localized on-chip electrical plasmon source using protruded metal-insulator-metal structure.

    PubMed

    Phua, Wee Kee; Akimov, Yuriy; Wu, Lin; Chu, Hong Son; Bai, Ping; Danner, Aaron

    2016-05-16

    A compact and highly efficient tunable and localized source of propagating surface plasmon-polaritons is proposed based on a protruded metal-insulator-metal (pMIM) structure. The protrusion along a segment of the pMIM forms a nanometer gap and allows a low voltage bias to generate a localized tunneling current. The tunneling current excited plasmons can be fully coupled to the metal-insulator-metal (MIM) waveguiding segment of the pMIM without leakage and propagate a long distance as the gap in the MIM waveguiding segment is much larger than the gap in the protruded segment of the pMIM. Eigenmode and numerical analyses show that by using MIM structures as a benchmark, the pMIM structure enhances the total amount of average power that is transferred from the tunneling current into the excitation of intrinsic eigenmodes of the MIM waveguiding segment. Depending on the magnitude of the applied voltage bias, the pMIM structure supports single, dual and multi modes for a typical Au-SiO2-Au design with a 500 nm-thick SiO2. Among all excited modes, the single mode operation allows highly efficient excitation of long travelling surface plasmon-polaritons (SPPs) of up to 30 µm. The electrical excitation of SPPs using pMIM structures opens up the possibility of integrating plasmon sources into nanoscale optoelectronic circuits to facilitate on-chip data communications. PMID:27409887

  7. Microwave Induced Structural Transitions in Polymers

    NASA Astrophysics Data System (ADS)

    Yang, Yuning; Lai, Wei-Chi

    2005-03-01

    Polymer chain dynamics as a function of temperature (in the range from 20 to 190 ^oC) have been studied using dielectric spectroscopy within the microwave frequency range. The frequency of radiation was varied from 0.5 GHz to 18 GHz. These studies were conducted for poly(caprolactone) (PCL), poly(ethylene oxide) (PEO), poly(vinyl acetate) (PvAC), poly(lactic acid), polystyrene (PS), nylon 6 and poly(methyl methacrylate) (PMMA). These polymers possess glass temperatures ranging from -- 62 ^oC (PCL) to 110 ^oC (PMMA). One broad relaxation process was found only for low Tg polymers (PCL and PEO) and not for the others. Results from temperature-dependent dielectric spectroscopy indicate that the relaxation process follows an Arrhenius T dependence suggesting the relaxation process is due to local motions. Moreover, the effect due to end groups was investigated by comparing results of PEO with hydroxy versus methoxy end groups. It was determined the structural transitions measured are not with end group motions. From the Debye diffusive model, the relaxation process is concluded to be associated with the short segmental motion along the backbone.

  8. Experimental and theoretical investigations on shock wave induced phase transitions

    NASA Astrophysics Data System (ADS)

    Gupta, Satish C.; Sikka, S. K.

    2001-06-01

    Shock wave loading of a material can cause variety of phase transitions, like polymorphism, amorphization, metallization and molecular dissociations. As the shocked state lasts only for a very short duration (about a few microseconds or less), in-situ microscopic measurements are very difficult. Although such studies are beginning to be possible, most of the shock-induced phase transitions are detected using macroscopic measurements. The microscopic nature of the transition is then inferred from comparison with static pressure data or interpreted by theoretical methods. For irreversible phase transitions, microscopic measurements on recovered samples, together with orientation relations determined from selected area electron diffraction and examination of the morphology of growth of the new phase can provide insight into mechanism of phase transitions. On theoretical side, the current ab initio band structure techniques based on density functional formalism provide capability for accurate computation of the small energy differences (a few mRy or smaller) between different plausible structures. Total energy calculation along the path of a phase transition can furnish estimates of activation barrier, which has implications for understanding kinetics of phase transitions. Molecular dynamics calculations, where the new structure evolves naturally, are becoming increasingly popular especially for understanding crystal to amorphous phase transitions. Illustrations from work at our laboratory will be presented.

  9. Gap Filler Induced Transition on the Mars Science Laboratory Heatshield

    NASA Technical Reports Server (NTRS)

    Yoon, Seokkwan; Barnhardt, Michael D.; Tang, Chun Y.; Sozer, Emre; Candler, Graham

    2012-01-01

    Detached Eddy Simulations have been performed to investigate the effects of high-fidelity turbulence modeling on roughness-induced transition to turbulence during Mars entry. Chemically reacting flow solutions will be obtained for a gap filler of Mars Science Laboratory at the peak heating condition.

  10. Glycyrrhetinic acid-induced permeability transition in rat liver mitochondria.

    PubMed

    Salvi, Mauro; Fiore, Cristina; Armanini, Decio; Toninello, Antonio

    2003-12-15

    Glycyrrhetinic acid, a hydrolysis product of one of the main constituents of licorice, the triterpene glycoside of glycyrrhizic acid, when added to rat liver mitochondria at micromolar concentrations induces swelling, loss of membrane potential, pyridine nucleotide oxidation, and release of cytochrome c and apoptosis inducing factor. These changes are Ca(2+) dependent and are prevented by cyclosporin A, bongkrekic acid, and N-ethylmaleimide. All these observations indicate that glycyrrhetinic acid is a potent inducer of mitochondrial permeability transition and can trigger the pro-apoptotic pathway. PMID:14637195

  11. Postfabrication annealing effects on insulator-metal transitions in VO2 thin-film devices.

    PubMed

    Rathi, Servin; Lee, In-yeal; Park, Jin-Hyung; Kim, Bong-Jun; Kim, Hyun-Tak; Kim, Gil-Ho

    2014-11-26

    In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.

  12. Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

    SciTech Connect

    Wang, Lijuan Song, Xiaofeng; Liu, Xin; Zhang, Long; Li, Yiping; Yan, Donghang

    2013-12-09

    We have investigated the interfacial and electrical properties of vanadyl-phthalocyanine (VOPc) metal-insulator-semiconductor devices by the measurement of capacitance and conductance. The devices have been fabricated on ordered para-sexiphenyl (p-6P) layer with silicon nitride (SiN{sub x}) as gate insulator. The VOPc/p-6P/SiN{sub x} devices have shown a negligible hysteresis, low series resistance, and high operated frequency. Bulk traps have been distinguished from interface traps by two loss peaks in conductance measurement. Trap densities and distribution of trap energy level have been obtained. The improved properties indicate that VOPc/ p-6P devices with SiN{sub x} insulator hold a great promise of application in flexible displays.

  13. Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal-insulator-metal and similar devices.

    PubMed

    Diesing, Detlef; Hasselbrink, Eckart

    2016-07-01

    Metal heterostructures have been used in recent years to gain insights into the relevance of energy dissipation into electronic degrees of freedom in surface chemistry. Non-adiabaticity in the surface chemistry results in the creation of electron-hole pairs, the number and energetic distribution of which need to be studied in detail. Several types of devices, such as metal-insulator-metal, metal-semiconductor and metal-semiconductor oxide-semiconductor, have been used. These devices operate by spatially separating the electrons from the holes, as an internal barrier allows only - or at least favours - transport from the top to the back electrode for one kind of carrier. An introduction into the matter, a survey of the literature and a critical discussion of the state of research is attempted. PMID:27186600

  14. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, T. J.

    2006-10-01

    High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10-5A/cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA/mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

  15. Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors

    SciTech Connect

    Devynck, M.; Rostirolla, B.; Watson, C. P.; Taylor, D. M.

    2014-11-03

    Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

  16. Significantly increased surface plasmon polariton mode excitation using a multilayer insulation structure in a metal-insulator-metal plasmonic waveguide.

    PubMed

    Yang, Hongyan; Li, Jianqing; Xiao, Gongli

    2014-06-10

    In this paper, we propose a novel multilayer insulation structure in a metal-insulator-metal (MIM) plasmonic waveguide to explore the possibility of increasing surface plasmon polariton (SPP) mode excitation. Numerical investigations show that the effective refractive index of the multilayer insulation structure affects symmetric SPP mode excitation. The significant enhancement of electric field intensity in horizontal and vertical profiles with a dipole in SiO2 compared with in Al2O3 is observed in the proposed MIM plasmonic waveguides due to a combination of the improved optical density and dipole radiation intensities under a low refractive index. The Au/SiO2/Al2O3/SiO2/Au geometry shows the best enhancement performances, which can serve as an excellent guideline for designing and optimizing a high-performance SPP source using a multilayer insulation structure.

  17. A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement

    NASA Astrophysics Data System (ADS)

    Lue, Hang-Ting; Tseng, Tseung-Yuen; Huang, Guo-Wei

    2002-04-01

    We have developed a method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. Ba0.5Sr0.5TiO3 (BST) thin films were deposited on 10 Ω cm (normal) and 10 k Ω cm [high-resistivity, (HR)] silicon substrates at the same time by rf magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with thru-reflect-line calibration while capacitance (C-V) measurements were carried out for BST/normal silicon. From the phase change of CPW transmission line and the maximum capacitance in C-V measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were investigated. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal-insulator-semiconductor structures.

  18. Disorder and the Metal-Insulator Crossover in Pr2-xCexCuO4-y

    NASA Astrophysics Data System (ADS)

    Bach, P. L.; Yu, W.; Higgins, J. S.; Xu, H.; Greene, R. L.; Weaver, B.

    2008-03-01

    One of the outstanding issues in the electron doped cuprates is the role that oxygenation plays in the superconductivity and normal state properties. Oxygen addition can be considered both a doping and a disordering process. To disentangle these two effects, disorder can be introduced by irradiating the samples without altering doping. We report transport studies on optimal and underdoped Pr2-xCexCuO4-y films subject to proton irradiation and oxygenation. We establish a correlation between the static AFM and the metal-insulator crossover. Our separation of the disorder and doping effects also shed light on oxygen reduction effects in electron-doped cuprates. Supported by NSF grant DMR-0653535.

  19. Pressure induced structural phase transition in IB transition metal nitrides compounds

    NASA Astrophysics Data System (ADS)

    Soni, Shubhangi; Kaurav, Netram; Jain, A.; Shah, S.; Choudhary, K. K.

    2015-06-01

    Transition metal mononitrides are known as refractory compounds, and they have, relatively, high hardness, brittleness, melting point, and superconducting transition temperature, and they also have interesting optical, electronic, catalytic, and magnetic properties. Evolution of structural properties would be an important step towards realizing the potential technological scenario of this material of class. In the present study, an effective interionic interaction potential (EIOP) is developed to investigate the pressure induced phase transitions in IB transition metal nitrides TMN [TM = Cu, Ag, and Au] compounds. The long range Coulomb, van der Waals (vdW) interaction and the short-range repulsive interaction upto second-neighbor ions within the Hafemeister and Flygare approach with modified ionic charge are properly incorporated in the EIOP. The vdW coefficients are computed following the Slater-Kirkwood variational method, as both the ions are polarizable. The estimated value of the phase transition pressure (Pt) and the magnitude of the discontinuity in volume at the transition pressure are consistent as compared to the reported data.

  20. Pressure induced structural phase transition in IB transition metal nitrides compounds

    SciTech Connect

    Soni, Shubhangi; Kaurav, Netram Jain, A.; Shah, S.; Choudhary, K. K.

    2015-06-24

    Transition metal mononitrides are known as refractory compounds, and they have, relatively, high hardness, brittleness, melting point, and superconducting transition temperature, and they also have interesting optical, electronic, catalytic, and magnetic properties. Evolution of structural properties would be an important step towards realizing the potential technological scenario of this material of class. In the present study, an effective interionic interaction potential (EIOP) is developed to investigate the pressure induced phase transitions in IB transition metal nitrides TMN [TM = Cu, Ag, and Au] compounds. The long range Coulomb, van der Waals (vdW) interaction and the short-range repulsive interaction upto second-neighbor ions within the Hafemeister and Flygare approach with modified ionic charge are properly incorporated in the EIOP. The vdW coefficients are computed following the Slater-Kirkwood variational method, as both the ions are polarizable. The estimated value of the phase transition pressure (Pt) and the magnitude of the discontinuity in volume at the transition pressure are consistent as compared to the reported data.

  1. High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors

    NASA Astrophysics Data System (ADS)

    Colón, Albert; Shi, Junxia

    2014-09-01

    High-κ insulating materials (HfO2, HfO2/Al2O3, HfAlOx, and HfSiOx) were deposited by atomic layer deposition (ALD) on AlGaN/GaN to form Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors (MISHFETs) and were electrically and structurally characterized. The objective of this study is to characterize the interface quality and correlate the results with electrical phenomena for each insulating material. Although there are many studies using HfO2 and Al2O3 on AlGaN, there is limited experimental data using ternary compounds such as HfAlOx or HfSiOx, compared to their binary counterparts. In this work, interface trap density, Dit, was extracted by the conductance method using on-chip metal-insulator-semiconductor heterostructure capacitors (MISHCAPs). HfO2 was measured to have the lowest trap density at low energies on the order of 1012 cm-2 eV-1 and quickly reduced about one order of magnitude less than the others at higher trap energies. HfO2/Al2O3, HfAlOx, and HfSiOx all had similar trap densities on the order of 1012 cm-2 eV-1. Ultra-low gate leakage levels were achieved, especially for HfAlOx on the orders of 10-12 A/mm. Our studies indicate that HfAlOx provides the best electrical characteristics such as lowest gate leakage current, largest channel carrier density and resistance to self-heating effects without the vulnerability to low crystallization temperatures.

  2. Hydration-Induced Phase Transitions in Surfactant and Lipid Films.

    PubMed

    Björklund, Sebastian; Kocherbitov, Vitaly

    2016-05-31

    For several surfactant and lipid systems, it is crucial to understand how hydration influences the physical and chemical properties. When humidity changes, it affects the degree of hydration by adding or removing water molecules. In many cases, this process induces transitions between liquid crystalline phases. This phenomenon is of general interest for numerous applications simply because of the fact that humidity variations are ubiquitous. Of particular interest are hydration-induced phase transitions in amphiphilic films, which in many cases appear as the frontier toward a vapor phase with changing humidity. Considering this, it is important to characterize the film thickness needed for the formation of 3D liquid crystalline phases and the lyotropic phase behavior of this kind of film. In this work, we study this issue by employing a recently developed method based on the humidity scanning quartz crystal microbalance with dissipation monitoring (HS QCM-D), which enables continuous scanning of the film hydration. We investigate five surfactants films (DDAO, DTAC, CTAC, SDS, and n-octylβ-d-glucoside) and one lipid film (monoolein) and show that HS QCM-D enables the fast characterization of hydration-induced phase transitions with small samples. Film thicknesses range from tens to hundreds of nanometers, and clear phase transitions are observed in all cases. It is shown that phase transitions in films occur at the same water activities as for corresponding bulk samples. This allows us to conclude that surfactant and lipid films, with a thickness of as low as 50 nm, are in fact assembled as 3D-structured liquid crystalline phases. Furthermore, liquid crystalline phases of surfactant films show liquidlike behavior, which decreases the accuracy of the absorbed water mass measurement. On the other hand, the monoolein lipid forms more rigid liquid crystalline films, allowing for an accurate determination of the water sorption isotherm, which is also true for the

  3. Noise-induced transition in human reaction times

    NASA Astrophysics Data System (ADS)

    Medina, José M.; Díaz, José A.

    2016-09-01

    The human reaction/response time can be defined as the time elapsed from the onset of stimulus presentation until a response occurs in many sensory and cognitive processes. A reaction time model based on Piéron’s law is investigated. The model shows a noise-induced transition in the moments of reaction time distributions due to the presence of strong additive noise. The model also demonstrates that reaction times do not follow fluctuation scaling between the mean and the variance but follow a generalized version between the skewness and the kurtosis. The results indicate that noise-induced transitions in the moments govern fluctuations in sensory-motor transformations and open an insight into the macroscopic effects of noise in human perception and action. The conditions that lead to extreme reaction times are discussed based on the transfer of information in neurons.

  4. The role of ultra-thin SiO2 layers in metal-insulator-semiconductor (MIS) photoelectrochemical devices (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Esposito, Daniel V.

    2015-08-01

    Solid-state junctions based on a metal-insulator-semiconductor (MIS) architecture are of great interest for a number of optoelectronic applications such as photovoltaics, photoelectrochemical cells, and photodetection. One major advantage of the MIS junction compared to the closely related metal-semiconductor junction, or Schottky junction, is that the thin insulating layer (1-3 nm thick) that separates the metal and semiconductor can significantly reduce the density of undesirable interfacial mid-gap states. The reduction in mid-gap states helps "un-pin" the junction, allowing for significantly higher built-in-voltages to be achieved. A second major advantage of the MIS junction is that the thin insulating layer can also protect the underlying semiconductor from corrosion in an electrochemical environment, making the MIS architecture well-suited for application in (photo)electrochemical applications. In this presentation, discontinuous Si-based MIS junctions immersed in electrolyte are explored for use as i.) photoelectrodes for solar-water splitting in photoelectrochemical cells (PECs) and ii.) position-sensitive photodetectors. The development and optimization of MIS photoelectrodes for both of these applications relies heavily on understanding how processing of the thin SiO2 layer impacts the properties of nano- and micro-scale MIS junctions, as well as the interactions of the insulating layer with the electrolyte. In this work, we systematically explore the effects of insulator thickness, synthesis method, and chemical treatment on the photoelectrochemical and electrochemical properties of these MIS devices. It is shown that electrolyte-induced inversion plays a critical role in determining the charge carrier dynamics within the MIS photoelectrodes for both applications.

  5. Pressure-induced phase transitions and metallization in VO2

    NASA Astrophysics Data System (ADS)

    Bai, Ligang; Li, Quan; Corr, Serena A.; Meng, Yue; Park, Changyong; Sinogeikin, Stanislav V.; Ko, Changhyun; Wu, Junqiao; Shen, Guoyin

    2015-03-01

    We report the results of pressure-induced phase transitions and metallization in VO2 based on synchrotron x-ray diffraction, electrical resistivity, and Raman spectroscopy. Our isothermal compression experiments at room temperature and 383 K show that the room temperature monoclinic phase (M 1 ,P 21/c ) and the high-temperature rutile phase (R ,P 42/m n m ) of VO2 undergo phase transitions to a distorted M 1 monoclinic phase (M 1' ,P 21/c ) above 13.0 GPa and to an orthorhombic phase (CaCl2-like, P n n m ) above 13.7 GPa, respectively. Upon further compression, both high-pressure phases transform into a new phase (phase X ) above 34.3 and 38.3 GPa at room temperature and 383 K, respectively. The room temperature M 1 -M 1' phase transition structurally resembles the R -CaCl2 phase transition at 383 K, suggesting a second-order displacive type of transition. Contrary to previous studies, our electrical resistivity results, Raman measurements, as well as ab initio calculations indicate that the new phase X , rather than the M 1' phase, is responsible for the metallization under pressure. The metallization mechanism is discussed based on the proposed crystal structure.

  6. Characterization of polycrystalline VO2 thin film with low phase transition temperature fabricated by high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen

    2016-04-01

    VO2 is a unique material that undergoes a reversible phase transformation around 68∘C. Currently, applications of VO2 on smart windows are limited by its high transition temperature. In order to reduce the temperature, VO2 thin film was fabricated on quartz glass substrate by high power impulse magnetron sputtering with a modulated pulsed power. The phase transition temperature has been reduced to as low as 32∘C. In addition, the VO2 film possesses a typical metal-insulator transition. X-ray diffraction and selected area electron diffraction patterns reveal that an obvious lattice distortion has been formed in the as-deposited polycrystalline VO2 thin film. X-ray photoelectron spectroscopy proves that oxygen vacancies have been formed in the as-deposited thin film, which will induce a lattice distortion in the VO2 thin film.

  7. Statistical and electrical properties of the conduction electrons of a metal nanosphere in the region of metal-insulator transition.

    PubMed

    Datsyuk, Vitaly V; Ivanytska, Iryna V

    2014-01-01

    Statistical and electrical properties of the conduction electrons of a silver or gold sphere with a radius from 1 to 2 nm are shown to differ drastically from the properties of electrons in a bulk metal sample. If the radius of a noble metal sphere decreases from 10 to 1 nm, its conductivity oscillates around the bulk metal value with increasing amplitude and drops at the 'magic' numbers of electrons. These numbers are equal to 186, 198, 254, 338, 440, 556, 676, 832, 912, 1,284, 1,502, and 1,760, in agreement with various experimental data. We show that the conductivity and capacitance of a metal nanosphere can be changed by several orders of magnitude by adding or removing just a few electrons.

  8. Statistical and electrical properties of the conduction electrons of a metal nanosphere in the region of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Datsyuk, Vitaly V.; Ivanytska, Iryna V.

    2014-04-01

    Statistical and electrical properties of the conduction electrons of a silver or gold sphere with a radius from 1 to 2 nm are shown to differ drastically from the properties of electrons in a bulk metal sample. If the radius of a noble metal sphere decreases from 10 to 1 nm, its conductivity oscillates around the bulk metal value with increasing amplitude and drops at the 'magic' numbers of electrons. These numbers are equal to 186, 198, 254, 338, 440, 556, 676, 832, 912, 1,284, 1,502, and 1,760, in agreement with various experimental data. We show that the conductivity and capacitance of a metal nanosphere can be changed by several orders of magnitude by adding or removing just a few electrons.

  9. Statistical and electrical properties of the conduction electrons of a metal nanosphere in the region of metal-insulator transition.

    PubMed

    Datsyuk, Vitaly V; Ivanytska, Iryna V

    2014-01-01

    Statistical and electrical properties of the conduction electrons of a silver or gold sphere with a radius from 1 to 2 nm are shown to differ drastically from the properties of electrons in a bulk metal sample. If the radius of a noble metal sphere decreases from 10 to 1 nm, its conductivity oscillates around the bulk metal value with increasing amplitude and drops at the 'magic' numbers of electrons. These numbers are equal to 186, 198, 254, 338, 440, 556, 676, 832, 912, 1,284, 1,502, and 1,760, in agreement with various experimental data. We show that the conductivity and capacitance of a metal nanosphere can be changed by several orders of magnitude by adding or removing just a few electrons. PMID:24716454

  10. Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

    SciTech Connect

    Shen, Xuan; Qiu, Xiangbiao; Su, Dong; Zhou, Shengqiang; Li, Aidong; Wu, Di

    2015-01-06

    Transport characteristics of ultrathin SrRuO₃ films, deposited epitaxially on TiO₂-terminated SrTiO₃ (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variable range hopping model, indicating a strongly localized state. As a result, magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction.

  11. Pressure dependence of metal-insulator transition in perovskites RNiO3 ( R=Eu , Y, Lu)

    NASA Astrophysics Data System (ADS)

    Cheng, J.-G.; Zhou, J.-S.; Goodenough, J. B.; Alonso, J. A.; Martinez-Lope, M. J.

    2010-08-01

    High-pressure experiments on the RNiO3 perovskites with smaller rare-earth R3+ ions complete our study of the crossover from itinerant to localized e -electron behavior associated with the low-spin Ni(III):t6e1 ion. By measuring second-sintered samples in a multianvil module, we have observed a clear anomaly of ρ(T) at TIM and obtained the pressure dependence of TIM for the RNiO3 ( R=Eu , Y, Lu) that are different from the published data supporting a charge-ordering model. Instead, they are comparable to that for the orbital-ordering insulator LaMnO3 . Our distinct results show clearly that where the crossover is approached from the localized-electron side by increasing the orbital overlap integral, a cooperative Jahn-Teller distortion prevents charge transfer from molecular e orbitals on strongly bonded NiO6/2 clusters to more weakly bonded Ni(III) centers. However, where the crossover is approached from the itinerant-electron side as in the perovskite CaFeO3 , a disproportionation charge transfer may occur. In a separate experiment in which the powder samples were pressed in a Bridgman anvil device without a pressure medium, we have shown after releasing pressure that the samples were reduced. This irreversible effect should be distinguished from the hydrostatic-pressure effect on the physical properties of the RNiO3 perovskites.

  12. A Self-Emissivity-Controlling Radiator for Spacecrafts by Making Use of a Metal-Insulator Transition in Magnetoresistive Manganites

    NASA Astrophysics Data System (ADS)

    Tanaka, Kohsuke; Tachikawa, Sumitaka; Kuwahara, Hideki; Okawa, Mario; Saitoh, Tomohiko

    A self-emissivity-controlling radiator named SRD (Smart Radiation Device) is one of the next generation thermal control materials for spacecrafts. It is a light ceramic tile that changes its infrared emissivity according to its own Temperature (T). This radiation property keeps the T and decreases the heater power of spacecraft. In order to improve the radiation property of SRD, we have studied various compositions. In this paper, we discuss how we can design an improved SRD and report the results of our compositional survey.

  13. Surface Effects on the Mott-Hubbard Transition in Archetypal V{2}O{3}.

    PubMed

    Lantz, G; Hajlaoui, M; Papalazarou, E; Jacques, V L R; Mazzotti, A; Marsi, M; Lupi, S; Amati, M; Gregoratti, L; Si, L; Zhong, Z; Held, K

    2015-12-01

    We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V{2}O{3}. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and x-ray diffraction, we find that surface defects act as nucleation centers for the formation of domains at the temperature-induced isostructural transition and favor the formation of microscopic metallic regions. A density-functional theory plus dynamical mean-field theory study of different surface terminations shows that the surface reconstruction with excess vanadyl cations leads to doped, and hence more metallic, surface states, which explains our experimental observations. PMID:26684133

  14. Surface Effects on the Mott-Hubbard Transition in Archetypal V2O3

    NASA Astrophysics Data System (ADS)

    Lantz, G.; Hajlaoui, M.; Papalazarou, E.; Jacques, V. L. R.; Mazzotti, A.; Marsi, M.; Lupi, S.; Amati, M.; Gregoratti, L.; Si, L.; Zhong, Z.; Held, K.

    2015-12-01

    We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V2O3. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and x-ray diffraction, we find that surface defects act as nucleation centers for the formation of domains at the temperature-induced isostructural transition and favor the formation of microscopic metallic regions. A density-functional theory plus dynamical mean-field theory study of different surface terminations shows that the surface reconstruction with excess vanadyl cations leads to doped, and hence more metallic, surface states, which explains our experimental observations.

  15. Multiple mechanisms underlying troglitazone-induced mitochondrial permeability transition

    SciTech Connect

    Okuda, Takuya; Norioka, Misaki; Shitara, Yoshihisa; Horie, Toshiharu

    2010-11-01

    Troglitazone, a thiazolidinedione class antidiabetic drug, was withdrawn from the market because of its severe idiosyncratic hepatotoxicity. It causes a mitochondrial permeability transition (MPT), which may in part contribute to its hepatotoxicity. In the present study, the mechanism of troglitazone mitochondrial toxicity was investigated in isolated rat liver mitochondria. Mitochondrial swelling induced by 10 {mu}M troglitazone was attenuated by bromoenol lactone (BEL), an inhibitor of Ca{sup 2+}-independent phospholipase A{sub 2} (iPLA{sub 2}). In contrast, that induced by 50 {mu}M troglitazone was exacerbated by BEL. This exacerbation was diminished by addition of 2 mM glutathione, an antioxidant. Oxygen consumption by state 3 respiration in isolated mitochondria was also decreased by troglitazone, but it was not affected by BEL. Mitochondrial swelling induced by 10 {mu}M troglitazone was completely attenuated in the absence of Ca{sup 2+} while that induced by 50 {mu}M troglitazone was not affected. Addition of 1 {mu}M cyclosporin A (CsA), an inhibitor of MPT pores, completely attenuated swelling induced by 10 {mu}M troglitazone while it only partly diminished that induced by 50 {mu}M troglitazone. Thus, the MPT induced by 10 and 50 {mu}M troglitazone are regulated by different mechanism; the MPT induced by 10 {mu}M troglitazone is regulated by the activation of iPLA{sub 2} and caused by the opening of CsA-regulating MPT pores followed by accumulation of Ca{sup 2+} in mitochondria, while that induced by 50 {mu}M troglitazone is partly regulated by reactive oxygen species and mainly caused by the opening of CsA-insensitive MPT pores.

  16. Observation of current-induced voltage jump at low temperature in VO2 nanowires

    NASA Astrophysics Data System (ADS)

    Das, Shubhankar; Rastogi, A.; Joshi, P. C.; Kaur, Mandeep; Husale, S. C.; Senguttuvan, T. D.; Hossain, Z.; Prellier, W.; Budhani, R. C.

    2013-02-01

    We report the observation of thermally induced metal-insulator transition (T-MIT) in VO2 nanowires which are fabricated using standard optical lithography followed by focused Ion Beam (FIB) milling. We also observed the current induced voltage jumps in current-voltage characteristics at temperatures far below the structural phase transition temperature (˜ 300K) on the nanowires. These voltage jumps are seen in a simple circuit without any inductive component. The current threshold, where the jumps occur, increases with increasing temperature. A detailed analysis of this anomalous transport in terms of cooling and heating rate during measurement will be presented in the light of enhanced precursor phenomenon in phase transitions in low dimensional systems.

  17. Laser-induced topological transitions in phosphorene with inversion symmetry

    NASA Astrophysics Data System (ADS)

    Dutreix, C.; Stepanov, E. A.; Katsnelson, M. I.

    2016-06-01

    Recent ab initio calculations and experiments reported insulating-semimetallic phase transitions in multilayer phosphorene under a perpendicular dc field, pressure, or doping, as a possible route to realize topological phases. In this work, we show that even a monolayer phosphorene may undergo Lifshitz transitions toward semimetallic and topological insulating phases, provided it is rapidly driven by in-plane time-periodic laser fields. Based on a four-orbital tight-binding description, we give an inversion-symmetry-based prescription in order to apprehend the topology of the photon-renormalized band structure, up to the second order in the high-frequency limit. Apart from the initial band insulating behavior, two additional phases are thus identified. A semimetallic phase with massless Dirac electrons may be induced by linear polarized fields, whereas elliptic polarized fields are likely to drive the material into an anomalous quantum Hall phase.

  18. Swelling transition of a clay induced by heating.

    PubMed

    Hansen, E L; Hemmen, H; Fonseca, D M; Coutant, C; Knudsen, K D; Plivelic, T S; Bonn, D; Fossum, J O

    2012-01-01

    Clays are of paramount importance for soil stability, but also in applications ranging from oil recovery to composites and hydrogels. Generically, clays are divided into two subclasses: macroscopically swelling, 'active' clays that have the capacity for taking up large amounts of water to form stable gels, and 'passive' or non-swelling clays; the former stabilize soils whereas the latter are known to lead to landslides. However, it has been unclear so far what mechanisms underlie clay swelling. Here, we report the first observation of a temperature-induced transition from a passive to an active, swelling clay. We propose a simple description of the swelling transition; while net attractive interactions are dominant at low temperatures so that the clay particles remain attached to each other in stacks, at higher temperatures it is energetically favourable for the clay to swell due to the entropy that is gained by counterions which are liberated during swelling.

  19. Size Segregation in Granular Media Induced by Phase Transition

    NASA Astrophysics Data System (ADS)

    Tarzia, M.; Fierro, A.; Nicodemi, M.; Ciamarra, M. Pica; Coniglio, A.

    2005-08-01

    In order to study analytically the nature of the size segregation in granular mixtures, we introduce a mean field theory in the framework of a statistical mechanics approach, based on Edwards’ original ideas. For simplicity we apply the theory to a lattice model for a hard sphere binary mixture under gravity, and we find a new purely thermodynamic mechanism that gives rise to the size segregation phenomenon. By varying the number of small grains and the mass ratio, we find a crossover from the Brazil nut to the reverse Brazil nut effect, which becomes a true phase transition when the number of small grains is larger then a critical value. We suggest that this transition is induced by the effective attraction between large grains due to the presence of small ones (depletion force). Finally the theoretical results are confirmed by numerical simulations of the 3d system under taps.

  20. Swelling transition of a clay induced by heating.

    PubMed

    Hansen, E L; Hemmen, H; Fonseca, D M; Coutant, C; Knudsen, K D; Plivelic, T S; Bonn, D; Fossum, J O

    2012-01-01

    Clays are of paramount importance for soil stability, but also in applications ranging from oil recovery to composites and hydrogels. Generically, clays are divided into two subclasses: macroscopically swelling, 'active' clays that have the capacity for taking up large amounts of water to form stable gels, and 'passive' or non-swelling clays; the former stabilize soils whereas the latter are known to lead to landslides. However, it has been unclear so far what mechanisms underlie clay swelling. Here, we report the first observation of a temperature-induced transition from a passive to an active, swelling clay. We propose a simple description of the swelling transition; while net attractive interactions are dominant at low temperatures so that the clay particles remain attached to each other in stacks, at higher temperatures it is energetically favourable for the clay to swell due to the entropy that is gained by counterions which are liberated during swelling. PMID:22943004

  1. Neuronal excitability level transition induced by electrical stimulation

    NASA Astrophysics Data System (ADS)

    Florence, G.; Kurths, J.; Machado, B. S.; Fonoff, E. T.; Cerdeira, H. A.; Teixeira, M. J.; Sameshima, K.

    2014-12-01

    In experimental studies, electrical stimulation (ES) has been applied to induce neuronal activity or to disrupt pathological patterns. Nevertheless, the underlying mechanisms of these activity pattern transitions are not clear. To study these phenomena, we simulated a model of the hippocampal region CA1. The computational simulations using different amplitude levels and duration of ES revealed three states of neuronal excitability: burst-firing mode, depolarization block and spreading depression wave. We used the bifurcation theory to analyse the interference of ES in the cellular excitability and the neuronal dynamics. Understanding this process would help to improve the ES techniques to control some neurological disorders.

  2. Roughness Induced Transition in a Supersonic Boundary Layer

    NASA Technical Reports Server (NTRS)

    Balakumar, Ponnampalam; Kergerise, Michael A.

    2013-01-01

    Direct numerical simulation is used to investigate the transition induced by threedimensional isolated roughness elements in a supersonic boundary layer at a free stream Mach number of 3.5. Simulations are performed for two different configurations: one is a square planform roughness and the other is a diamond planform roughness. The mean-flow calculations show that the roughness induces counter rotating streamwise vortices downstream of the roughness. These vortices persist for a long distance downstream and lift the low momentum fluid from the near wall region and place it near the outer part of the boundary layer. This forms highly inflectional boundary layer profiles. These observations agree with recent experimental observations. The receptivity calculations showed that the amplitudes of the mass-flux fluctuations near the neutral point for the diamond shape roughness are the same as the amplitude of the acoustic disturbances. They are three times smaller for the square shape roughness.

  3. Temperature Dependence in Desorption Induced by Electronic Transitions.

    NASA Astrophysics Data System (ADS)

    Heinz, T. F.; Misewich, J. A.

    1996-03-01

    The process of desorption induced by electronic transitions (DIET) is a subject of great theoretical and experimental interest. We have extended the classic MGR model for DIET to include initial thermal excitation of the adsorbate. In the MGR model, an electronic transition causes the adsorbate to move on excited potential energy surface. Desorption ensues whenever the adsorbate stays in the excited state long enough to acquire the necessary energy to escape from the surface. At finite temperatures, the initial transition occurs from a distribution of ground-state vibrational energies and momenta. Compared with the zero temperature desorption yield some components of the finite-temperature distribution will have enhanced yields while others will have suppressed yields. Averaging over the initial distribution, we find that the desorption yield increases substantially with temperature, particularly for short excited-state lifetimes. These findings and their extension to the multiple excitation regime are relevant to understanding the long-time scale response observed in femtosecond two-pulse correlation measurements of O_2/Pd(111). J. A. Misewich et al., J. Chem. Phys. 100, 736 (1994)

  4. Design and fabrication of a high-density multilayer metal-insulator-metal capacitor based on selective etching

    SciTech Connect

    Tseng, VFG; Xie, H

    2013-02-06

    This paper presents a novel and cost-effective method for fabricating high-density multilayer metal-insulator-metal (MIM) integrated capacitors. To eliminate the usage of numerous photolithography steps when parallel stacking multiple capacitors layers, a unique process has been developed based on depositing the MIM layers onto a substrate with two protruding pillars, polishing down the pillars to expose the multilayer cross sections and then selectively etching the metal layers on each pillar to form the alternating capacitor plate electrodes. For demonstration purpose, only capacitors with two dielectric layers were fabricated, and the measurement results were verified by a compact analytical model together with finite element simulations. With 200 nm thick silicon nitride/oxide dielectric layers, a capacitance density of 0.6 fF mu m(-2) was achieved, which can be easily increased by scaling down the layer thicknesses and/or stacking more layers. A low equivalent series resistance (ESR) of 300-700 m Omega was measured, and the self-resonance frequency was above measurement limits (> 100 MHz). Further design optimization shows that the ESR can be reduced to below 80 m Omega, while the operation frequency extended to above 2.6 GHz.

  5. Structurally-tolerant vertical directional coupling between metal-insulator-metal plasmonic waveguide and silicon dielectric waveguide.

    PubMed

    Li, Qiang; Qiu, Min

    2010-07-19

    Vertical directional coupling between a metal-insulator-metal (MIM) plasmonic waveguide and a conventional dielectric waveguide is investigated. The coupling length, extinction ratio, insertion loss and coupling efficiency of the hybrid coupler are analyzed. As an example, when the separation between the two waveguides is 250 nm, a maximum coupling efficiency of 73%, an insertion loss of -1.4 dB and an extinction ratio of 16 dB can be achieved at a coupling length of 4.5 microm at 1.55 microm wavelength. A particular feature of this hybrid coupler is that it is highly tolerant to the structural parameters of the plasmonic waveguide and the misalignment between the two waveguides. The performance of this hybrid coupler as a TM polarizer is also analyzed and a maximum extinction ratio of 44 dB and an insertion loss of -0.18 dB can be obtained. The application of this hybrid coupler includes the signal routing between plasmonic waveguides and dielectric waveguides in photonic integrated circuits and the polarization control between TE and TM modes. In addition, it provides an approach for efficiently exciting MIM plasmonic modes with conventional dielectric modes.

  6. Studies of Large-Area Inversion-Layer Metal-Insulator-Semiconductor (IL/MIS) Solar Cells and Arrays

    NASA Technical Reports Server (NTRS)

    Ho, Fat Duen

    1996-01-01

    Many inversion-layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. There are around eighteen 1 cm(exp 2) IL/MIS solar cells which have efficiencies greater than 7%. There are only about three 19 cm(exp 2) IL/MIS cells which have efficiencies greater than 4%. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved. A lot of effort and progress have been made in this area. A comprehensive model for MIS contacts under dark conditions has been developed that covers a wide range of parameters. It has been applied to MIS solar cells. One of the main advantages of these models is the prediction of the range of the thin oxide thickness versus the maximum efficiencies of the MIS solar cells. This is particularly important when the thickness is increased to 25 A. This study is very useful for our investigation of the IL/MIS solar cells. The two-dimensional numerical model for the IL/MIS solar cells has been tried to develop and the results are presented in this report.

  7. Mass-productive fabrication of a metal-insulator-metal plasmon waveguide with a linear taper for nanofocusing

    NASA Astrophysics Data System (ADS)

    Wongpanya, Kruawan; Kasaya, Takeshi; Miyazaki, Hideki T.; Oosato, Hirotaka; Sugimoto, Yoshimasa; Pijitrojana, Wanchai

    2016-09-01

    The fabrication of a metal-insulator-metal plasmon waveguide with a linear taper is reported. Highly efficient nanofocusing of light with a Au-SiO2-Au waveguide with a three-dimensional taper had been demonstrated. However, conventional vertical taper structures were fabricated with a low-throughput process based on electron beam scanning. We propose an efficient, mass-productive fabrication process using a standard dry etching technique. A key improvement is the employment of a mixed gas of CHF3 and O2. By optimizing the gas composition and the cooling process of the substrate, a SiO2 vertical taper with an angle of 19°, which is very close to the optimum 20°, was successfully produced. At the tip section, an ultra-thin waveguide as thin as 5.6 nm, only one-third of the conventional demonstration, is reproducibly realized by the employment of an atomic layer deposition of Al2O3. Coupling efficiency as high as 72 % numerically demonstrated.

  8. Pt-Ti-O gate silicon-metal-insulator-semiconductor field-effect transistor hydrogen gas sensors in harsh environments

    NASA Astrophysics Data System (ADS)

    Usagawa, Toshiyuki; Ueda, Kazuhiro; Nambu, Akira; Yoneyama, Akio; Kikuchi, Yota; Watanabe, Atsushi

    2016-06-01

    The influence of radiation damages to developed hydrogen gas sensor chips from γ-rays (60Co) and/or X-rays (synchrotron radiation) is manageably avoided for sensor operations even at extremely high integral doses such as 1.8 and/or 18 MGy. Platinum-titanium-oxygen (Pt-Ti-O) gate silicon-metal-insulator-semiconductor field-effect transistor (Si-MISFET) hydrogen gas sensors can work stably as hydrogen sensors up to about 270 °C and also show environmental hardness as follows: When nitrogen-diluted 10-ppm hexamethyldisiloxane (HMDS) was exposed to the sensor FETs for 40 min at a working temperature of 115 °C, large sensing amplitude (ΔV g) changed little within repetition errors before and after HMDS exposures. The variations of ΔV g among relative humidity of 20 and 80% are very small within ±4.4% around 50% under 40 °C atmosphere. The Pt-Ti-O sensors have been found to show large ΔV g of 624.4 mV with σΔV g of 7.27 mV for nine times repeated measurements under nitrogen-diluted 1.0%-hydrogen gas, which are nearly the same values of 654.5 mV with σΔV g of 3.77 mV under air-diluted 1.0%-hydrogen gas.

  9. Fabrication of Buried Co-Planar Metal-Insulator-Metal Nanojunctions with a Gap Lower than 10nm

    NASA Astrophysics Data System (ADS)

    Rousset, V.; Joachim, C.; Itoua, S.; Rousset, B.; Fabre, N.

    1995-12-01

    An improvement of a process to fabricate co-planar metal-insulator-metal nanojunctions is presented to reach a gap length much lower than 10 nm using a 20 keV e-beam and an AuPd lift-off. The electrodes of the nanojunction are less than 100 nm in width and are buried in the SiO2 substrate. For the 8 nm nanojunctions, the gap is still filled with SiO2 if care is taken about the SiO2 etching step of the process. Un procédé de fabrication est proposé pour obtenir des nanojonctions métal-isolant-métal co-planaires d'une largeur d'isolant bien inférieure à 10nm en utilisant un masqueur électronique à 20keV et un “lift-off” à l'or-palladium. Les électrodes de la nanojonction enterrées dans la silice ont une largeur de moins de 100nm et sont distantes de 8nm. En optimisant l'étape de sous gravure, il est possible de conserver de la silice comme isolant entre les électrodes.

  10. Impact of graphene-graphite films on electrical properties of Al2O3 metal-insulator-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Choi, Kyeong-Keun; Kee, Jong; Park, Chan-Gyung; Kim, Deok-kee

    2016-08-01

    The diffusion barrier property of directly grown graphene-graphite films between Al2O3 films and Si substrates was evaluated using metal-insulator-semiconductor (MIS) structures. The roughness, morphology, sheet resistance, Raman spectrum, chemical composition, and breakdown field strength of the films were investigated after rapid thermal annealing. About 2.5-nm-thick graphene-graphite films effectively blocked the formation of the interfacial layer between Al2O3 films and Si, which was confirmed by the decreased breakdown field strength of graphene-graphite film structures. After annealing at 975 °C for 90 s, the increase in the mean breakdown field strength of the structure with the ˜2.5-nm-thick graphene-graphite film was about 91% (from 8.7 to 16.6 MV/cm), while that without the graphene-graphite film was about 187% (from 11.2 to 32.1 MV/cm). Si atom diffusion into Al2O3 films was reduced by applying the carbon-based diffusion barrier.

  11. Nonlinear Metal-Insulator-Metal (MIM) Nanoplasmonic Waveguides Based on Electron Tunneling for Optical Rectification and Frequency Generation

    NASA Astrophysics Data System (ADS)

    Lei, Xiaoqin

    Metal-Insulator-Metal (MIM) electron tunneling diodes have recently emerged as an attractive alternative to semiconductor photodiodes for THz and optical detection due to their fast response time and relative ease of fabrication. However, current antenna-coupled MIM diode detectors are still limited by poor responsivity and low detection bandwidth due to impedance mismatch between the diode and antenna, large RC time constant of lumped MIM junctions, and narrow bandwidth of traditional antenna designs. In this thesis we address these issues by considering traveling-wave MIM detector designs which exhibit enhanced responsivity and low impedance that can be more easily matched to planar antennas. We also propose new antenna geometries based on surface modification of traditional bowtie antennas that are capable of receiving ultra-wideband THz signals. The concept of traveling-wave MIM detectors is then extended to the investigation of nonlinear MIM nanoplasmonic waveguides for on-chip single-cycle THz pulse generation, frequency conversion, as well as plasmonic switching and modulation.

  12. Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

    SciTech Connect

    Pandey, Sumeet C. Meade, Roy; Sandhu, Gurtej S.

    2015-02-07

    We present numerical results from atomistic simulations of Cu in SiO{sub 2} and Al{sub 2}O{sub 3}, with an emphasis on the thermodynamic, kinetic, and electronic properties. The calculated properties of Cu impurity at various concentrations (9.91 × 10{sup 20 }cm{sup −3} and 3.41 × 10{sup 22 }cm{sup −3}) in bulk oxides are presented. The metal-insulator interfaces result in up to a ∼4 eV reduction in the formation energies relative to the crystalline bulk. Additionally, the importance of Cu-Cu interaction in lowering the chemical potential is introduced. These concepts are then discussed in the context of formation and stability of localized conductive paths in resistance-switching Random Access Memories (RRAM-M). The electronic density of states and non-equilibrium transmission through these localized paths are studied, confirming conduction by showing three orders of magnitude increase in the electron transmission. The dynamic behavior of the conductive paths is investigated with atomistic drift-diffusion calculations. Finally, the paper concludes with a molecular dynamics simulation of a RRAM-M cell that attempts to combine the aforementioned phenomena in one self-consistent model.

  13. Electro-Mechanical Properties of Metal-Insulator-Metal Device Fabricated on Polymer Substrate Using Low-Temperature Process

    NASA Astrophysics Data System (ADS)

    Park, Sung Kyu; Han, Jeong In; Kim, Won Keun; Hong, Sung Jei; Kwak, Min Gi; Lee, Myung Jae; Chung, Kwan Soo

    2002-02-01

    High-performance metal-insulator-metal (MIM) devices on flexible polymer substrates were successfully fabricated without any defects such as cracks, delamination and blistering. This work examines the mechanical and electrical properties of MIM devices constructed using anodic Ta2O5 films. Using newly developed methods including stepped heating process and low-temperature post-annealing below 180°C, we obtained high-performances MIM devices on polymer substrates. Here, we propose the use of stacked bottom electrode and water barrier layer in order to enhance the ductility of the Ta electrode and to prevent blistering problems, respectively. Rutherford backscattering spectroscopy (RBS), auger electron spectroscopy (AES) and transmission electronic microscope (TEM) observations were performed for the structural investigation of the MIM devices on polymer substrates. Electrical measurements were also carried out for as-deposited and thermally treated MIM devices including Al/Ta/Ta2O5/Cr or Ti structures. They exhibit a low leakage current (below 10-7 A/cm2 at 2 MV) and reasonable breakdown voltage (5-7 MV/cm) with a uniformity of 92%. Finally, under low-temperature post-annealing conditions, The Current-Voltage (I-V) behaviors and conduction mechanisms of MIM devices on polymer substrates are discussed based on the results of electrical measurements, structural investigations and conduction band modeling.

  14. Design of a compact and high sensitive refractive index sensor base on metal-insulator-metal plasmonic Bragg grating.

    PubMed

    Binfeng, Yun; Guohua, Hu; Ruohu, Zhang; Yiping, Cui

    2014-11-17

    A nanometric and high sensitive refractive index sensor based on the metal-insulator-metal plasmonic Bragg grating is proposed. The wavelength encoded sensing characteristics of the refractive index sensor were investigated by analyzing its transmission spectrum. The numerical results show that a good linear relationship between the Bragg wavelength and the refractive index of the sensing material can be obtained, which is in accordance with the analytical results very well. A high refractive index sensitivity of 1,488 nm/RIU around Bragg resonance wavelength of 1,550 nm was obtained. Besides, the simulation results show that the sensitivity is depended on the Bragg resonance wavelength and the longer the Bragg resonance wavelength, the higher sensitivity can be obtained. Furthermore, the figure of merit of the refractive index sensor can be greatly increased by introducing a nano-cavity in the proposed plasmonic Bragg grating structure. This work pave the way for high sensitive nanometric refractive index sensor design and application.

  15. Electrostatic analysis of n-doped SrTiO{sub 3} metal-insulator-semiconductor systems

    SciTech Connect

    Kamerbeek, A. M. Banerjee, T.; Hueting, R. J. E.

    2015-12-14

    Electron doped SrTiO{sub 3}, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO{sub 3} systems show reasonably strong rectification even when SrTiO{sub 3} is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO{sub x} in between the metal and n-SrTiO{sub 3} interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO{sub 3}) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO{sub 3}. The non-linear permittivity of n-SrTiO{sub 3} leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors.

  16. Design of a compact and high sensitive refractive index sensor base on metal-insulator-metal plasmonic Bragg grating.

    PubMed

    Binfeng, Yun; Guohua, Hu; Ruohu, Zhang; Yiping, Cui

    2014-11-17

    A nanometric and high sensitive refractive index sensor based on the metal-insulator-metal plasmonic Bragg grating is proposed. The wavelength encoded sensing characteristics of the refractive index sensor were investigated by analyzing its transmission spectrum. The numerical results show that a good linear relationship between the Bragg wavelength and the refractive index of the sensing material can be obtained, which is in accordance with the analytical results very well. A high refractive index sensitivity of 1,488 nm/RIU around Bragg resonance wavelength of 1,550 nm was obtained. Besides, the simulation results show that the sensitivity is depended on the Bragg resonance wavelength and the longer the Bragg resonance wavelength, the higher sensitivity can be obtained. Furthermore, the figure of merit of the refractive index sensor can be greatly increased by introducing a nano-cavity in the proposed plasmonic Bragg grating structure. This work pave the way for high sensitive nanometric refractive index sensor design and application. PMID:25402107

  17. A metal-insulator-metal electron emitter based on a porous Al{sub 2}O{sub 3} film

    SciTech Connect

    Xue, Tao; Liang, Zhi-Hu Zhang, Xiao-Ning; Liu, Chun-Liang

    2015-04-20

    A metal-insulator-metal electron emitter containing a sandwiched insulator layer composed of porous aluminum oxide Al{sub 2}O{sub 3} was fabricated. The electron emission characteristics of the electron emitter were investigated under vacuum and xenon. Treatment with H{sub 3}PO{sub 4} and rapid thermal oxidation increased the electric field inside the insulator and improved the quality of porous Al{sub 2}O{sub 3}, resulting in higher efficiency and less fluctuation of electron emission. The maximum current and efficiency of electron emission reached 1.05 mA/cm{sup 2} and 51.2%, respectively, under a pressure of 1.0×10{sup −4} Pa. In addition, electrons were injected into xenon and 147 nm vacuum ultraviolet emission was detected in xenon at a pressure of 5.0 × 10{sup 2 }Pa. This electron emitter has a great potential for use as an ultraviolet radiation source.

  18. Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

    NASA Technical Reports Server (NTRS)

    Johnson, Gregory A.; Kapoor, Vik J.

    1991-01-01

    Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

  19. Metal-Insulator-Metal capacitors with ALD grown SrTiO3: Influence of Pt electrodes

    NASA Astrophysics Data System (ADS)

    Lukosius, M.; Blomberg, T.; Walczyk, D.; Ruhl, G.; Wenger, Ch

    2012-12-01

    Metal-Insulator-metal (MIM) capacitors with atomic layer deposited (ALD) single SrTiO3 dielectric have been investigated in this work. Structural and electrical properties were studied after the formation of the MIM stack consisting of the platinum (Pt) bottom electrode, 50 nm SrTiO3 layer and the top Pt electrode. The as deposited films were amorphous and had a dielectric constant of ~ 10, whereas the annealing of the samples in the nitrogen (N2) or oxygen (O2) atmosphere at 550-600 °C led to the crystallization of the SrTiO3 and therefore to the increased dielectric constant of ~ 85. In addition, the electrical results revealed that the combination of SrTiO3 with the high work function electrode like Pt, provided better leakage current performance in comparison with TiN/ SrTiO3 stacks. The values as low as ~ 10-7 A/cm2 at 2 V were observed for both in N2 or O2 annealed SrTiO3 layers. On the other hand, the samples annealed in O2 atmosphere at 600 °C possessed lower capacitance-voltage nonlinearity coefficients (-645 ppm/V2) than the ones for N2 annealed samples (-2700 ppm/V2).

  20. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    SciTech Connect

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  1. Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

    NASA Astrophysics Data System (ADS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Regan, William Raymond; Zettl, Alex

    2015-03-01

    We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.

  2. Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

    PubMed

    Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

    2016-08-23

    Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

  3. Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

    PubMed

    Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

    2016-08-23

    Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications. PMID:27464073

  4. Random Field Driven Spatial Complexity at the Mott Transition in VO2

    NASA Astrophysics Data System (ADS)

    Liu, Shuo; Phillabaum, B.; Carlson, E. W.; Dahmen, K. A.; Vidhyadhiraja, N. S.; Qazilbash, M. M.; Basov, D. N.

    2016-01-01

    We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

  5. Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer

    NASA Astrophysics Data System (ADS)

    Wager, John F.; Robertson, John

    2011-05-01

    Metal-induced gap states (MIGS) modeling is used to elucidate the lack of Fermi level pinning at metal-insulator-Ge interfaces. Energy band diagram assessment reveals the existence of two dipoles at the metal-insulator and the insulator-semiconductor interface. The metal-insulator dipole modulates the metal-insulator interface electron barrier and the voltage drop across the insulator but does not affect the barrier to electron transport across the metal-insulator-Ge interface. Rather, this electron transport barrier is established by the metal-semiconductor work function difference and the insulator-semiconductor dipole. Thus, the lack of Fermi level pinning at a metal-insulator-Ge interface is attributed to the fact that the electron transport barrier does not depend upon MIGS screening. A quantitative formulation of this metal-insulator-semiconductor interface MIGS-based model confirms the lack of Fermi level pinning. Furthermore, it indicates that care must be taken when assessing experimental barrier height- work function data since the slope parameter should only be evaluated for the range of metal work function in which the semiconductor is in depletion. This range of work function for which the semiconductor is in depletion is quite limited for the case of a narrow bandgap semiconductor, such as Ge.

  6. Mechanisms of TGFβ-Induced Epithelial–Mesenchymal Transition

    PubMed Central

    Moustakas, Aristidis; Heldin, Carl-Henrik

    2016-01-01

    Transitory phenotypic changes such as the epithelial–mesenchymal transition (EMT) help embryonic cells to generate migratory descendants that populate new sites and establish the distinct tissues in the developing embryo. The mesenchymal descendants of diverse epithelia also participate in the wound healing response of adult tissues, and facilitate the progression of cancer. EMT can be induced by several extracellular cues in the microenvironment of a given epithelial tissue. One such cue, transforming growth factor β (TGFβ), prominently induces EMT via a group of specific transcription factors. The potency of TGFβ is partly based on its ability to perform two parallel molecular functions, i.e. to induce the expression of growth factors, cytokines and chemokines, which sequentially and in a complementary manner help to establish and maintain the EMT, and to mediate signaling crosstalk with other developmental signaling pathways, thus promoting changes in cell differentiation. The molecules that are activated by TGFβ signaling or act as cooperating partners of this pathway are impossible to exhaust within a single coherent and contemporary report. Here, we present selected examples to illustrate the key principles of the circuits that control EMT under the influence of TGFβ. PMID:27367735

  7. Mechanisms of TGFβ-Induced Epithelial-Mesenchymal Transition.

    PubMed

    Moustakas, Aristidis; Heldin, Carl-Henrik

    2016-01-01

    Transitory phenotypic changes such as the epithelial-mesenchymal transition (EMT) help embryonic cells to generate migratory descendants that populate new sites and establish the distinct tissues in the developing embryo. The mesenchymal descendants of diverse epithelia also participate in the wound healing response of adult tissues, and facilitate the progression of cancer. EMT can be induced by several extracellular cues in the microenvironment of a given epithelial tissue. One such cue, transforming growth factor β (TGFβ), prominently induces EMT via a group of specific transcription factors. The potency of TGFβ is partly based on its ability to perform two parallel molecular functions, i.e. to induce the expression of growth factors, cytokines and chemokines, which sequentially and in a complementary manner help to establish and maintain the EMT, and to mediate signaling crosstalk with other developmental signaling pathways, thus promoting changes in cell differentiation. The molecules that are activated by TGFβ signaling or act as cooperating partners of this pathway are impossible to exhaust within a single coherent and contemporary report. Here, we present selected examples to illustrate the key principles of the circuits that control EMT under the influence of TGFβ. PMID:27367735

  8. Noise-induced transitions in rugged energy landscapes

    NASA Astrophysics Data System (ADS)

    Duncan, A. B.; Kalliadasis, S.; Pavliotis, G. A.; Pradas, M.

    2016-09-01

    We consider the problem of an overdamped Brownian particle moving in multiscale potential with N +1 characteristic length scales: the macroscale and N separated microscales. We show that the coarse-grained dynamics is given by an overdamped Langevin equation with respect to the free energy and with a space-dependent diffusion tensor, the calculation of which requires the solution of N fully coupled Poisson equations. We study in detail the structure of the bifurcation diagram for one-dimensional problems, and we show that the multiscale structure in the potential leads to hysteresis effects and to noise-induced transitions. Furthermore, we obtain an explicit formula for the effective diffusion coefficient for a self-similar separable potential, and we investigate the limit of infinitely many small scales.

  9. A Transition in Brain State during Propofol-Induced Unconsciousness

    PubMed Central

    Mukamel, Eran A.; Pirondini, Elvira; Babadi, Behtash; Wong, Kin Foon Kevin; Pierce, Eric T.; Harrell, P. Grace; Walsh, John L.; Salazar-Gomez, Andres F.; Cash, Sydney S.; Eskandar, Emad N.; Weiner, Veronica S.; Brown, Emery N.

    2014-01-01

    Rhythmic oscillations shape cortical dynamics during active behavior, sleep, and general anesthesia. Cross-frequency phase-amplitude coupling is a prominent feature of cortical oscillations, but its role in organizing conscious and unconscious brain states is poorly understood. Using high-density EEG and intracranial electrocorticography during gradual induction of propofol general anesthesia in humans, we discovered a rapid drug-induced transition between distinct states with opposite phase-amplitude coupling and different cortical source distributions. One state occurs during unconsciousness and may be similar to sleep slow oscillations. A second state occurs at the loss or recovery of consciousness and resembles an enhanced slow cortical potential. These results provide objective electrophysiological landmarks of distinct unconscious brain states, and could be used to help improve EEG-based monitoring for general anesthesia. PMID:24431442

  10. Shock induced phase transition of water: Molecular dynamics investigation

    NASA Astrophysics Data System (ADS)

    Neogi, Anupam; Mitra, Nilanjan

    2016-02-01

    Molecular dynamics simulations were carried out using numerous force potentials to investigate the shock induced phenomenon of pure bulk liquid water. Partial phase transition was observed at single shock velocity of 4.0 km/s without requirement of any external nucleators. Change in thermodynamic variables along with radial distribution function plots and spectral analysis revealed for the first time in the literature, within the context of molecular dynamic simulations, the thermodynamic pathway leading to formation of ice VII from liquid water on shock loading. The study also revealed information for the first time in the literature about the statistical time-frame after passage of shock in which ice VII formation can be observed and variations in degree of crystallinity of the sample over the entire simulation time of 100 ns.

  11. TGF-β induced epithelial-mesenchymal transition modeling

    NASA Astrophysics Data System (ADS)

    Xenitidis, P.; Seimenis, I.; Kakolyris, S.; Adamopoulos, A.

    2015-09-01

    Epithelial cells may undergo a process called epithelial to mesenchymal transition (EMT). During EMT, cells lose their epithelial characteristics and acquire a migratory ability. Transforming growth factor-beta (TGF-β) signaling is considered to play an important role in EMT by regulating a set of genes through a gene regulatory network (GRN). This work aims at TGF-β induced EMT GRN modeling using publicly available experimental data (gene expression microarray data). The time-series network identification (TSNI) algorithm was used for inferring the EMT GRN. Receiver operating characteristic (ROC) and precision-recall (P-R) curves were constructed and the areas under them were used for evaluating the algorithm performance regarding network inference.

  12. Strain-induced topological quantum phase transition in phosphorene oxide

    NASA Astrophysics Data System (ADS)

    Kang, Seoung-Hun; Park, Jejune; Woo, Sungjong; Kwon, Young-Kyun

    Using ab initio density functional theory, we investigate the structural stability and electronic properties of phosphorene oxides (POx) with different oxygen compositions x. A variety of configurations are modeled and optimized geometrically to search for the equilibrium structure for each x value. Our electronic structure calculations on the equilibrium configuration obtained for each x reveal that the band gap tends to increase with the oxygen composition of x < 0.5, and then to decrease with x > 0.5. We further explore the strain effect on the electronic structure of the fully oxidized phosphorene, PO, with x = 1. At a particular strain without spin-orbit coupling (SOC) is observed a band gap closure near the Γ point in the k space. We further find the strain in tandem with SOC induces an interesting band inversion with a reopened very small band gap (5 meV), and thus gives rise to a topological quantum phase transition from a normal insulator to a topological insulator. Such a topological phase transition is confirmed by the wave function analysis and the band topology identified by the Z2 invariant calculation.

  13. Temperature-Induced Lifshitz Transition in WTe2

    NASA Astrophysics Data System (ADS)

    Wu, Yun; Jo, Na Hyun; Ochi, Masayuki; Huang, Lunan; Mou, Daixiang; Bud'ko, Sergey L.; Canfield, P. C.; Trivedi, Nandini; Arita, Ryotaro; Kaminski, Adam

    2015-10-01

    We use ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES), temperature- and field-dependent resistivity, and thermoelectric power (TEP) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X -Γ -X direction. Using detailed ARPES temperature scans, we find a rare example of a temperature-induced Lifshitz transition at T ≃160 K , associated with the complete disappearance of the hole pockets. Our electronic structure calculations show a clear and substantial shift of the chemical potential μ (T ) due to the semimetal nature of this material driven by modest changes in temperature. This change of Fermi surface topology is also corroborated by the temperature dependence of the TEP that shows a change of slope at T ≈175 K and a breakdown of Kohler's rule in the 70-140 K range. Our results and the mechanisms driving the Lifshitz transition and transport anomalies are relevant to other systems, such as pnictides, 3D Dirac semimetals, and Weyl semimetals.

  14. Solid-solid transitions induced by repulsive interactions revisited

    NASA Astrophysics Data System (ADS)

    Navascués, G.; Velasco, E.; Mederos, L.

    2016-10-01

    We revisit a problem already studied 15 years ago by us in collaboration with Stell and Hemmer: the isostructural solid-solid transitions induced by repulsive particle interactions exhibited by classical systems interacting via the Stell-Hemmer potentials. The full phase diagram in the crystal region is obtained by applying a perturbation theory for classical solids used during our collaboration with Stell. Also, the performance of such a theory is now tested by comparing the perturbative phase diagram with that obtained from computer simulations. The latter was calculated using a recently refined method to obtain the free-energy of crystals by means of Monte Carlo simulations. The perturbation theory captures the correct topology and correctly identifies the stable, fcc and bcc, phases. In addition, the theory predicts the occurrence of special points: a point where the two stable structures coexist at the same density, and two critical points terminating the corresponding isostructural phase transitions for fcc and bcc phases. The location of some of these features in the phase diagram is predicted almost quantitatively. However, phase boundaries involving the non-compact bcc phase are much less accurate, a problem that can be traced to the poor representation used for the bcc phase of the reference, hard-sphere, system.

  15. Temperature-induced Lifshitz transition in WTe2

    DOE PAGESBeta

    Wu, Yun; Jo, Na Hyun; Ochi, Masayuki; Huang, Lunan; Mou, Daixiang; Bud’ko, Sergey L.; Canfield, P. C.; Trivedi, Nandini; Arita, Ryotaro; Kaminski, Adam

    2015-10-12

    In this study, we use ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES), temperature- and field-dependent resistivity, and thermoelectric power (TEP) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X–Γ–X direction. Using detailed ARPES temperature scans, we find a rare example of a temperature-induced Lifshitz transition at T≃160 K, associated with the complete disappearance of the hole pockets. Our electronic structure calculations show a clear and substantial shift of the chemical potential μ(T)more » due to the semimetal nature of this material driven by modest changes in temperature. This change of Fermi surface topology is also corroborated by the temperature dependence of the TEP that shows a change of slope at T≈175 K and a breakdown of Kohler’s rule in the 70–140 K range. Our results and the mechanisms driving the Lifshitz transition and transport anomalies are relevant to other systems, such as pnictides, 3D Dirac semimetals, and Weyl semimetals.« less

  16. Temperature-Induced Lifshitz Transition in WTe2.

    PubMed

    Wu, Yun; Jo, Na Hyun; Ochi, Masayuki; Huang, Lunan; Mou, Daixiang; Bud'ko, Sergey L; Canfield, P C; Trivedi, Nandini; Arita, Ryotaro; Kaminski, Adam

    2015-10-16

    We use ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES), temperature- and field-dependent resistivity, and thermoelectric power (TEP) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X-Γ-X direction. Using detailed ARPES temperature scans, we find a rare example of a temperature-induced Lifshitz transition at T≃160  K, associated with the complete disappearance of the hole pockets. Our electronic structure calculations show a clear and substantial shift of the chemical potential μ(T) due to the semimetal nature of this material driven by modest changes in temperature. This change of Fermi surface topology is also corroborated by the temperature dependence of the TEP that shows a change of slope at T≈175  K and a breakdown of Kohler's rule in the 70-140 K range. Our results and the mechanisms driving the Lifshitz transition and transport anomalies are relevant to other systems, such as pnictides, 3D Dirac semimetals, and Weyl semimetals. PMID:26550889

  17. A microscopic theory of desorption induced by electronic transitions

    NASA Astrophysics Data System (ADS)

    Kasai, Hideaki; Okiji, Ayao; Tsuchiura, Hiroki

    1996-08-01

    Desorption induced by electronic transitions (DIET) in two cases is investigated from a microscopic point of view. In case A, where a single electron in a state of the localized kind (localized around adsorbates) is excited into a state of the extended kind (extended into the bosom of the substrate), the shape of the excited-state potential-energy surface (PES) may differ markedly from that of the ground-state PES for adsorbate motion. The Franck-Condon factor then takes a finite value, giving rise to a finite desorption probability. In case B, where a single electron in a state of the extended kind is excited into another state of the extended kind, the shape of the excited-state PES is practically the same as that of the ground-state PES. The Frank-Condon factor is then zero. In such a case, one should take DIET as a single-step (coherent) process and take into account the adsorbate-position dependence of the matrix element for state transitions of the electron system in order to obtain a finite desorption probability.

  18. Solid-solid transitions induced by repulsive interactions revisited.

    PubMed

    Navascués, G; Velasco, E; Mederos, L

    2016-10-19

    We revisit a problem already studied 15 years ago by us in collaboration with Stell and Hemmer: the isostructural solid-solid transitions induced by repulsive particle interactions exhibited by classical systems interacting via the Stell-Hemmer potentials. The full phase diagram in the crystal region is obtained by applying a perturbation theory for classical solids used during our collaboration with Stell. Also, the performance of such a theory is now tested by comparing the perturbative phase diagram with that obtained from computer simulations. The latter was calculated using a recently refined method to obtain the free-energy of crystals by means of Monte Carlo simulations. The perturbation theory captures the correct topology and correctly identifies the stable, fcc and bcc, phases. In addition, the theory predicts the occurrence of special points: a point where the two stable structures coexist at the same density, and two critical points terminating the corresponding isostructural phase transitions for fcc and bcc phases. The location of some of these features in the phase diagram is predicted almost quantitatively. However, phase boundaries involving the non-compact bcc phase are much less accurate, a problem that can be traced to the poor representation used for the bcc phase of the reference, hard-sphere, system. PMID:27546295

  19. Pressure-induced phase transition and polymerization of tetracyanoethylene (TCNE)

    NASA Astrophysics Data System (ADS)

    Tomasino, Dane; Chen, Jing-Yin; Kim, Minesob; Yoo, Choong-Shik

    2013-03-01

    We have studied the pressure-induced physical and chemical transformations of tetracyanoethylene (TCNE or C6N4) in diamond anvil cells using micro-Raman spectroscopy, laser-heating, emission spectroscopy, and synchrotron x-ray diffraction. The results indicate that TCNE in a quasi-hydrostatic condition undergoes a shear-induced phase transition at 10 GPa and then a chemical change to two-dimensional (2D) C=N polymers above 14 GPa. These phase and chemical transformations depend strongly on the state of stress in the sample and occur sluggishly in non-hydrostatic conditions over a large pressure range between 7 and 14 GPa. The x-ray diffraction data indicate that the phase transition occurs isostructurally within the monoclinic structure (P21/c) without any apparent volume discontinuity and the C=N polymer is highly disordered but remains stable to 60 GPa—the maximum pressure studied. On the other hand, laser-heating of the C=N polymer above 25 GPa further converts to a theoretically predicted 3D C-N network structure, evident from an emergence of new Raman νs(C-N) at 1404 cm-1 at 25 GPa and the visual appearance of translucent solid. The C-N product is, however, unstable upon pressure unloading below 10 GPa, resulting in a grayish powder that can be considered as nano-diamonds with high-nitrogen content at ambient pressure. The C-N product shows a strong emission line centered at 640 nm at 30 GPa, which linearly shifts toward shorter wavelength at the rate of -1.38 nm/GPa. We conjecture that the observed red shift upon unloading pressure is due to increase of defects in the C-N product and thereby weakening of C-N bonds.

  20. Temperature-driven and photo-induced MIT behaviors of VO2 nanowires

    NASA Astrophysics Data System (ADS)

    Sohn, Ahrum; Kim, Dong-Wook; Byun, Ji-Won; Baik, Jeong Min

    2014-03-01

    VO2 shows a metal-insulator transition (MIT) and structural phase transition (SPT) at critical temperature (Tc) of 343K. It has been known that the MIT and SPT behaviors of VO2 can be tuned by external stimuli such as light, electric-field, and strain. We carried out comparative studies of MIT behaviors of VO2 nanowires during heating-cooling cycles with and without illumination using several light sources (red, blue, and UV). Light can induce change in Tc and hysteresis width of the resistance change. We have investigated influences of light on SPT during MIT. In this presentation, we will discuss possible physical origins for the photo-induced effects on the MIT behaviors of the VO2 nanowires.

  1. A Pt-Ti-O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor

    NASA Astrophysics Data System (ADS)

    Usagawa, Toshiyuki; Kikuchi, Yota

    2010-10-01

    A hydrogen gas sensor based on platinum-titanium-oxygen (Pt-Ti-O) gate silicon-metal-insulator-semiconductor field-effect transistors (Si-MISFETs) was developed. The sensor has a unique gate structure composed of titanium and oxygen accumulated around platinum grains on top of a novel mixed layer of nanocrystalline TiOx and superheavily oxygen-doped amorphous titanium formed on SiO2/Si substrates. The FET hydrogen sensor shows high reliability and high sensing amplitude (Δ Vg) defined by the magnitude of the threshold voltage shift. Δ Vg is well fitted by a linear function of the logarithm of air-diluted hydrogen concentration C (ppm), i.e., Δ Vg(V) =0.355 log C(ppm ) -0.610 , between 100 ppm and 1%. This high gradient coefficient of Δ Vg for the wide sensing range demonstrates that the sensor is suitable for most hydrogen-safety-monitoring sensor systems. The Pt-Ti-O structures of the sensor are typically realized by annealing Pt (15 nm)/Ti (5 nm)-gate Si-metal-oxide-semiconductor structures in air at 400 °C for 2 h. The Pt-Ti-O gate MIS structures were analyzed by transmission electron microscope (TEM), x-ray diffraction, Auger electron spectroscopy, and TEM energy dispersive x-ray spectroscopy. From the viewpoint of practical sensing applications, hydrogen postannealing of the Pt-Ti-O gate Si-MISFETs is necessary to reduce the residual sensing amplitudes with long tailing profiles.

  2. Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

    NASA Astrophysics Data System (ADS)

    Alimardani, Nasir; King, Sean W.; French, Benjamin L.; Tan, Cheng; Lampert, Benjamin P.; Conley, John F.

    2014-07-01

    The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb2O5, Ta2O5, ZrO2, HfO2, Al2O3, and SiO2 amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss spectroscopy (REELS) is utilized to measure the band-gap energy (EG) and energy position of intrinsic sub-gap defect states for each insulator. EG of as-deposited ALD insulators are found to be Nb2O5 = 3.8 eV, Ta2O5 = 4.4 eV, ZrO2 = 5.4 eV, HfO2 = 5.6 eV, Al2O3 = 6.4 eV, and SiO2 = 8.8 eV with uncertainty of ±0.2 eV. Current vs. voltage asymmetry, non-linearity, turn-on voltage, and dominant conduction mechanisms are compared. Al2O3 and SiO2 are found to operate based on Fowler-Nordheim tunneling. Al2O3 shows the highest asymmetry. ZrO2, Nb2O5, and Ta2O5 based diodes are found to be dominated by Frenkel-Poole emission at large biases and exhibit lower asymmetry. The electrically estimated trap energy levels for defects that dominate Frenkel-Poole conduction are found to be consistent with the energy levels of surface oxygen vacancy defects observed in REELS measurements. For HfO2, conduction is found to be a mix of trap assisted tunneling and Frenkel-Poole emission. Insulator selection criteria in regards to MIM diodes applications are discussed.

  3. Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

    PubMed Central

    Ji, Yanda; Zhang, Yin; Gao, Min; Yuan, Zhen; Xia, Yudong; Jin, Changqing; Tao, Bowan; Chen, Chonglin; Jia, Quanxi; Lin, Yuan

    2014-01-01

    Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications. PMID:24798056

  4. Screening-induced carrier transport in silicene.

    PubMed

    Hu, Bo

    2015-06-24

    Based on the Boltzmann transport equation in the MRT approximation, we present a theory to investigate low-field carrier transport in dual-gated silicene FETs by taking into account screened charged impurity scattering, which is the most likely scattering mechanism limiting the conductivity. Static RPA dielectric screening is also included in the conductivity calculation to study temperature-dependent silicene transport. It is found that both calculated conductivity and band gap not only depend strongly on carrier sheet density, but also depend strongly on effective offset density. More importantly, screening-induced metal-insulator-transition phenomena in buckled silicene can be observed theoretically, which is similar to that obtained in monolayer graphene.

  5. Griffiths singularity of quantum phase transition in ion-gated ZrNCl

    NASA Astrophysics Data System (ADS)

    Saito, Yu; Nojima, Tsutomu; Iwasa, Yoshihiro

    Recent technological advances of thin films fabrication, especially mechanical exfoliation, led to discoveries of less-disordered highly-crystalline two-dimensional (2D) superconductors; atomically thin NbSe2 and ion-gated 2D materials, which show intrinsic properties of 2D superconductors with minimal disorder; for example, metallic ground state, and unconventional 2D Ising superconductivity due to pure spin-valley locking effect. In this talk, we focus on magnetotransport properties of an ionic-liquid gated ZrNCl, which exhibited Griffiths singularity-like behavior in superconductor-metal-insulator transition induced by magnetic fields at low carrier concentrations. The overall behavior is quite similar to the recent results of superconducting Ga thin films, in which quantum Griffiths singularity was observed in vortex-glass state. We will discuss the relationship between Griffiths singularity and quantum tunneling or flux flow of vortices phase (vortex liquid) in our system

  6. Sequence Recognition of DNA by Protein-Induced Conformational Transitions

    SciTech Connect

    Watkins, Derrick; Mohan, Srividya; Koudelka, Gerald B.; Williams, Loren Dean

    2010-11-09

    The binding of proteins to specific sequences of DNA is an important feature of virtually all DNA transactions. Proteins recognize specific DNA sequences using both direct readout (sensing types and positions of DNA functional groups) and indirect readout (sensing DNA conformation and deformability). Previously we showed that the P22 c2 repressor N-terminal domain (P22R NTD) forces the central non-contacted 5{prime}-ATAT-3{prime} sequence of the DNA operator into the B{prime} state, a state known to affect DNA hydration, rigidity and bending. Usually the B{prime} state, with a narrow minor groove and a spine of hydration, is reserved for A-tract DNA (TpA steps disrupt A-tracts). Here, we have co-crystallized P22R NTD with an operator containing a central 5{prime}-ACGT-3{prime} sequence in the non-contacted region. C {center_dot} G base pairs have not previously been observed in the B{prime} state and are thought to prevent it. However, P22R NTD induces a narrow minor groove and a spine of hydration to 5{prime}-ACGT-3{prime}. We observe that C {center_dot} G base pairs have distinctive destabilizing and disordering effects on the spine of hydration. It appears that the reduced stability of the spine results in a higher energy cost for the B to B{prime} transition. The differential effect of DNA sequence on the barrier to this transition allows the protein to sense the non-contacted DNA sequence.

  7. Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

    SciTech Connect

    Alimardani, Nasir; Tan, Cheng; Lampert, Benjamin P.; Conley, John F.; King, Sean W.; French, Benjamin L.

    2014-07-14

    The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb{sub 2}O{sub 5}, Ta{sub 2}O{sub 5}, ZrO{sub 2}, HfO{sub 2}, Al{sub 2}O{sub 3}, and SiO{sub 2} amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss spectroscopy (REELS) is utilized to measure the band-gap energy (E{sub G}) and energy position of intrinsic sub-gap defect states for each insulator. E{sub G} of as-deposited ALD insulators are found to be Nb{sub 2}O{sub 5} = 3.8 eV, Ta{sub 2}O{sub 5} = 4.4 eV, ZrO{sub 2} = 5.4 eV, HfO{sub 2} = 5.6 eV, Al{sub 2}O{sub 3} = 6.4 eV, and SiO{sub 2} = 8.8 eV with uncertainty of ±0.2 eV. Current vs. voltage asymmetry, non-linearity, turn-on voltage, and dominant conduction mechanisms are compared. Al{sub 2}O{sub 3} and SiO{sub 2} are found to operate based on Fowler-Nordheim tunneling. Al{sub 2}O{sub 3} shows the highest asymmetry. ZrO{sub 2}, Nb{sub 2}O{sub 5}, and Ta{sub 2}O{sub 5} based diodes are found to be dominated by Frenkel-Poole emission at large biases and exhibit lower asymmetry. The electrically estimated trap energy levels for defects that dominate Frenkel-Poole conduction are found to be consistent with the energy levels of surface oxygen vacancy defects observed in REELS measurements. For HfO{sub 2}, conduction is found to be a mix of trap assisted tunneling and Frenkel-Poole emission. Insulator selection criteria in regards to MIM diodes applications are discussed.

  8. Quantum transport in graphene in presence of strain-induced pseudo-Landau levels

    NASA Astrophysics Data System (ADS)

    Settnes, Mikkel; Leconte, Nicolas; Barrios-Vargas, Jose E.; Jauho, Antti-Pekka; Roche, Stephan

    2016-09-01

    We report on mesoscopic transport fingerprints in disordered graphene caused by strain-field induced pseudomagnetic Landau levels (pLLs). Efficient numerical real space calculations of the Kubo formula are performed for an ordered network of nanobubbles in graphene, creating pseudomagnetic fields up to several hundreds of Tesla, values inaccessible by real magnetic fields. Strain-induced pLLs yield enhanced scattering effects across the energy spectrum resulting in lower mean free path and enhanced localization effects. In the vicinity of the zeroth order pLL, we demonstrate an anomalous transport regime, where the mean free paths increases with disorder. We attribute this puzzling behavior to the low-energy sub-lattice polarization induced by the zeroth order pLL, which is unique to pseudomagnetic fields preserving time-reversal symmetry. These results, combined with the experimental feasibility of reversible deformation fields, open the way to tailor a metal-insulator transition driven by pseudomagnetic fields.

  9. Defect-induced semiconductor to metal transition in graphene monoxide.

    PubMed

    Woo, Jungwook; Yun, Kyung-Han; Cho, Sung Beom; Chung, Yong-Chae

    2014-07-14

    This study investigates the influence of point defects on the geometric and electronic structure of graphene monoxide (GMO) via density functional theory calculations. In aspects of defect formation energy, GMOs with oxygen vacancies and bridge interstitial defects are more likely to form when compared to GMOs with defects such as carbon vacancies and hollow interstitial defects. It was also found that the oxygen vacancy or the hollow interstitial defect induces local tensile strain around the defective site and this strain increases the band gap energy of the defective GMO. In addition, the band gaps of GMO with carbon vacancies or bridge interstitial defects decreased mainly due to the dangling bonds, not due to the strain effect. It is noted that the dangling bond derived from the defects forms the defect-level in the band gap of GMO. The semiconductor to metal transition by the band gap change (0-0.7 eV) implies the possibility for band gap engineering of GMO by vacancies and interstitial defects. PMID:24886723

  10. Extensional Flow-Induced Dynamic Phase Transitions in Isotactic Polypropylene.

    PubMed

    Ju, Jianzhu; Wang, Zhen; Su, Fengmei; Ji, Youxin; Yang, Haoran; Chang, Jiarui; Ali, Sarmad; Li, Xiangyang; Li, Liangbin

    2016-09-01

    With a combination of fast extension rheometer and in situ synchrotron radiation ultra-fast small- and wide-angle X-ray scattering, flow-induced crystallization (FIC) of isotactic polypropylene (iPP) is studied at temperatures below and above the melting point of α crystals (Tmα). A flow phase diagram of iPP is constructed in strain rate-temperature space, composing of melt, non-crystalline shish, α and α&β coexistence regions, based on which the kinetic and dynamic competitions among these four phases are discussed. Above Tmα , imposing strong flow reverses thermodynamic stabilities of the disordered melt and the ordered phases, leading to the occurrence of FIC of β and α crystals as a dynamic phase transition. Either increasing temperature or stain rate favors the competiveness of the metastable β over the stable α crystals, which is attributed to kinetic rate rather than thermodynamic stability. The violent competitions among four phases near the boundary of crystal-melt may frustrate crystallization and result in the non-crystalline shish winning out. PMID:27376630

  11. Extensional Flow-Induced Dynamic Phase Transitions in Isotactic Polypropylene.

    PubMed

    Ju, Jianzhu; Wang, Zhen; Su, Fengmei; Ji, Youxin; Yang, Haoran; Chang, Jiarui; Ali, Sarmad; Li, Xiangyang; Li, Liangbin

    2016-09-01

    With a combination of fast extension rheometer and in situ synchrotron radiation ultra-fast small- and wide-angle X-ray scattering, flow-induced crystallization (FIC) of isotactic polypropylene (iPP) is studied at temperatures below and above the melting point of α crystals (Tmα). A flow phase diagram of iPP is constructed in strain rate-temperature space, composing of melt, non-crystalline shish, α and α&β coexistence regions, based on which the kinetic and dynamic competitions among these four phases are discussed. Above Tmα , imposing strong flow reverses thermodynamic stabilities of the disordered melt and the ordered phases, leading to the occurrence of FIC of β and α crystals as a dynamic phase transition. Either increasing temperature or stain rate favors the competiveness of the metastable β over the stable α crystals, which is attributed to kinetic rate rather than thermodynamic stability. The violent competitions among four phases near the boundary of crystal-melt may frustrate crystallization and result in the non-crystalline shish winning out.

  12. Temperature-Induced Lifshitz Transition in WTe2

    NASA Astrophysics Data System (ADS)

    Jo, Na Hyun; Wu, Yun; Ochi, Masayuki; Huang, Lunan; Mou, Daixiang; Bud'Ko, Sergey L.; Canfield, P. C.; Trivedi, Nandini; Arita, Ryotaro; Kaminski, Adam

    We use thermoeletric power (TEP), temperature- and field-dependent resistivity, and ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X - Γ - X direction. We find a rare example of a temperature-induced Lifshitz transition at T ~ 160 K. Temperature dependent TEP shows a change of slope at T ~ 175 K and Kohler's rule was breakdown in the 70-140 K range. ARPES temperature scans confirm that the hole pockets completely disappear around 160 K. Our electronic structure calculations show a clear and substantial shift of the chemical potential μ (T) due to the semimetal nature of this material driven by modest changes in temperature. [PRL 115, 166602 (2015)] This work is supported by the US DOE, Basic Energy Sciences under Contract No. DE-AC02-07CH11358; Betty Moore Foundation EPiQS Initiative (Grant No. GBMF4411); and CEM, a NSF MRSEC, under Grant No. DMR-1420451.

  13. Induce magnetism into silicene by embedding transition-metal atoms

    SciTech Connect

    Sun, Xiaotian; Wang, Lu E-mail: yyli@suda.edu.cn; Lin, Haiping; Hou, Tingjun; Li, Youyong E-mail: yyli@suda.edu.cn

    2015-06-01

    Embedding transition-metal (TM) atoms into nonmagnetic nanomaterials is an efficient way to induce magnetism. Using first-principles calculations, we systematically investigated the structural stability and magnetic properties of TM atoms from Sc to Zn embedded into silicene with single vacancy (SV) and double vacancies (DV). The binding energies for different TM atoms correlate with the TM d-shell electrons. Sc, Ti, and Co show the largest binding energies of as high as 6 eV, while Zn has the lowest binding energy of about 2 eV. The magnetic moment of silicene can be modulated by embedding TM atoms from V to Co, which mainly comes from the 3d orbitals of TM along with partly contributions from the neighboring Si atoms. Fe atom on SV and Mn atom on DV have the largest magnetic moment of more than 3 μB. In addition, we find that doping of N or C atoms on the vacancy site could greatly enhance the magnetism of the systems. Our results provide a promising approach to design silicene-based nanoelectronics and spintronics device.

  14. Induced phase transitions of nanoparticle-stabilized emulsions

    NASA Astrophysics Data System (ADS)

    Frijters, Stefan; Günther, Florian; Harting, Jens

    2013-11-01

    Nanoparticles can stabilize fluid-fluid interfaces over long timescales and are nowadays commonly used, e.g. in emulsions. However, their fundamental properties are as of yet poorly understood. Nanoparticle-stabilized emulsions can exhibit different phases, such as Pickering emulsions or bijels, which can be characterized by their different topologies and rheology. We investigate the effect of various initial conditions on random mixtures of two fluids and nanoparticles - in particular, the final state these systems will reach. For this, we use the well-established 3D lattice Boltzmann method, extended to allow for the added nanoparticles. After the evolution of the emulsions has stopped, we induce transitions from one state to another by gradually changing the wettability of the nanoparticles over time. This changes the preferential local curvature of the interfaces, which strongly affects the global state. We observe strong hysteresis effects because of the energy barrier presented by the necessary massive reordering of the particles. Being able to change emulsion states in situ has potential application possibilities in filtering technology, or creating particle scaffolds.

  15. Limiting Behavior in Desorption Induced by Multiple Electronic Transitions (DIMET).

    NASA Astrophysics Data System (ADS)

    Misewich, J. A.; Heinz, T. F.

    1996-03-01

    In recent experiments femtosecond laser light has been used to activate chemical processes at metal surfaces. Such excitation leads to a new regime in which the high electronic tempeature of the substrate drive reactions. Two classes of models have been proposed to explain the coupling of adsorbate motion to the substrate electronic excitations: one based on an electronic friction picture footnote C. Springer, M. Head-Gordon, and J. C. Tully, Surf. Sci. 320, L57 (1994); M. Brandbyge et al., Phys. Rev. B 52, 6042 (1995) and the other on multiple excitation picture (Desorption Induced by Multiple Electronic Transitions - DIMET).footnote J. A. Misewich et al., Phys. Rev. Lett. 68, 3737 (1992) Here we discuss the limiting behavior of the DIMET model at low and high electronic temperatures. At low electronic temperatures, the model approaches the behavior of the familiar single-excitation DIET process. At high electronic temperatures, the DIMET model yields results similar to that expected in an electronic friction picture. In particular, we show that the DIMET model yields an energy distribution in the adsorbate reaction coordinate that is approximately thermal and approaches equilibrium with the substrate electronic excitations.

  16. Defect-induced semiconductor to metal transition in graphene monoxide.

    PubMed

    Woo, Jungwook; Yun, Kyung-Han; Cho, Sung Beom; Chung, Yong-Chae

    2014-07-14

    This study investigates the influence of point defects on the geometric and electronic structure of graphene monoxide (GMO) via density functional theory calculations. In aspects of defect formation energy, GMOs with oxygen vacancies and bridge interstitial defects are more likely to form when compared to GMOs with defects such as carbon vacancies and hollow interstitial defects. It was also found that the oxygen vacancy or the hollow interstitial defect induces local tensile strain around the defective site and this strain increases the band gap energy of the defective GMO. In addition, the band gaps of GMO with carbon vacancies or bridge interstitial defects decreased mainly due to the dangling bonds, not due to the strain effect. It is noted that the dangling bond derived from the defects forms the defect-level in the band gap of GMO. The semiconductor to metal transition by the band gap change (0-0.7 eV) implies the possibility for band gap engineering of GMO by vacancies and interstitial defects.

  17. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    PubMed Central

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-01-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films. PMID:27033718

  18. On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

    SciTech Connect

    Bakeroot, B.; You, S.; Van Hove, M.; De Jaeger, B.; Geens, K.; Stoffels, S.; Decoutere, S.; Wu, T.-L.; Hu, J.

    2014-10-07

    It is commonly accepted that interface states at the passivation surface of AlGaN/GaN heterostructures play an important role in the formation of the 2DEG density. Several interface state models are cited throughout literature, some with discrete levels, others with different kinds of distributions, or a combination of both. The purpose of this article is to compare the existing interface state models with both direct and indirect measurements of these interface states from literature (e.g., through the hysteresis of transfer characteristics of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) employing such an interface in the gate region) and Technology Computer Aided Design (TCAD) simulations of 2DEG densities as a function of the AlGaN thickness. The discrepancies between those measurements and TCAD simulations (also those commonly found in literature) are discussed. Then, an alternative model inspired by the Disorder Induced Gap State model for compound semiconductors is proposed. It is shown that defining a deep border trap inside the insulator can solve these discrepancies and that this alternative model can explain the origin of the two dimensional electron gas in combination with a high-quality interface that, by definition, has a low interface state density.

  19. On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Bakeroot, B.; You, S.; Wu, T.-L.; Hu, J.; Van Hove, M.; De Jaeger, B.; Geens, K.; Stoffels, S.; Decoutere, S.

    2014-10-01

    It is commonly accepted that interface states at the passivation surface of AlGaN/GaN heterostructures play an important role in the formation of the 2DEG density. Several interface state models are cited throughout literature, some with discrete levels, others with different kinds of distributions, or a combination of both. The purpose of this article is to compare the existing interface state models with both direct and indirect measurements of these interface states from literature (e.g., through the hysteresis of transfer characteristics of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) employing such an interface in the gate region) and Technology Computer Aided Design (TCAD) simulations of 2DEG densities as a function of the AlGaN thickness. The discrepancies between those measurements and TCAD simulations (also those commonly found in literature) are discussed. Then, an alternative model inspired by the Disorder Induced Gap State model for compound semiconductors is proposed. It is shown that defining a deep border trap inside the insulator can solve these discrepancies and that this alternative model can explain the origin of the two dimensional electron gas in combination with a high-quality interface that, by definition, has a low interface state density.

  20. Stability of the M2 phase of vanadium dioxide induced by coherent epitaxial strain

    NASA Astrophysics Data System (ADS)

    Quackenbush, N. F.; Paik, H.; Wahila, M. J.; Sallis, S.; Holtz, M. E.; Huang, X.; Ganose, A.; Morgan, B. J.; Scanlon, D. O.; Gu, Y.; Xue, F.; Chen, L.-Q.; Sterbinsky, G. E.; Schlueter, C.; Lee, T.-L.; Woicik, J. C.; Guo, J.-H.; Brock, J. D.; Muller, D. A.; Arena, D. A.; Schlom, D. G.; Piper, L. F. J.

    2016-08-01

    Tensile strain along the cR axis in epitaxial VO2 films raises the temperature of the metal insulator transition and is expected to stabilize the intermediate monoclinic M2 phase. We employ surface-sensitive x-ray spectroscopy to distinguish from the TiO2 substrate and identify the phases of VO2 as a function of temperature in epitaxial VO2/TiO2 thin films with well-defined biaxial strain. Although qualitatively similar to our Landau-Ginzburg theory predicted phase diagrams, the M2 phase is stabilized by nearly an order of magnitude more strain than expected for the measured temperature window. Our results reveal that the elongation of the cR axis is insufficient for describing the transition pathway of VO2 epitaxial films and that a strain induced increase of electron correlation effects must be considered.

  1. Bifurcation of transition paths induced by coupled bistable systems.

    PubMed

    Tian, Chengzhe; Mitarai, Namiko

    2016-06-01

    We discuss the transition paths in a coupled bistable system consisting of interacting multiple identical bistable motifs. We propose a simple model of coupled bistable gene circuits as an example and show that its transition paths are bifurcating. We then derive a criterion to predict the bifurcation of transition paths in a generalized coupled bistable system. We confirm the validity of the theory for the example system by numerical simulation. We also demonstrate in the example system that, if the steady states of individual gene circuits are not changed by the coupling, the bifurcation pattern is not dependent on the number of gene circuits. We further show that the transition rate exponentially decreases with the number of gene circuits when the transition path does not bifurcate, while a bifurcation facilitates the transition by lowering the quasi-potential energy barrier.

  2. Bifurcation of transition paths induced by coupled bistable systems.

    PubMed

    Tian, Chengzhe; Mitarai, Namiko

    2016-06-01

    We discuss the transition paths in a coupled bistable system consisting of interacting multiple identical bistable motifs. We propose a simple model of coupled bistable gene circuits as an example and show that its transition paths are bifurcating. We then derive a criterion to predict the bifurcation of transition paths in a generalized coupled bistable system. We confirm the validity of the theory for the example system by numerical simulation. We also demonstrate in the example system that, if the steady states of individual gene circuits are not changed by the coupling, the bifurcation pattern is not dependent on the number of gene circuits. We further show that the transition rate exponentially decreases with the number of gene circuits when the transition path does not bifurcate, while a bifurcation facilitates the transition by lowering the quasi-potential energy barrier. PMID:27276971

  3. Bifurcation of transition paths induced by coupled bistable systems

    NASA Astrophysics Data System (ADS)

    Tian, Chengzhe; Mitarai, Namiko

    2016-06-01

    We discuss the transition paths in a coupled bistable system consisting of interacting multiple identical bistable motifs. We propose a simple model of coupled bistable gene circuits as an example and show that its transition paths are bifurcating. We then derive a criterion to predict the bifurcation of transition paths in a generalized coupled bistable system. We confirm the validity of the theory for the example system by numerical simulation. We also demonstrate in the example system that, if the steady states of individual gene circuits are not changed by the coupling, the bifurcation pattern is not dependent on the number of gene circuits. We further show that the transition rate exponentially decreases with the number of gene circuits when the transition path does not bifurcate, while a bifurcation facilitates the transition by lowering the quasi-potential energy barrier.

  4. Gate-tunable phase transitions in thin flakes of 1T-TaS2

    NASA Astrophysics Data System (ADS)

    Yu, Yijun; Yang, Fangyuan; Lu, Xiu Fang; Yan, Ya Jun; Cho, Yong-Heum; Ma, Liguo; Niu, Xiaohai; Kim, Sejoong; Son, Young-Woo; Feng, Donglai; Li, Shiyan; Cheong, Sang-Wook; Chen, Xian Hui; Zhang, Yuanbo

    2015-03-01

    The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2. The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density wave states in 1T-TaS2 collapse in the two-dimensional limit at critical thicknesses. Meanwhile, at low temperatures, the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS2 thin flakes, with five orders of magnitude modulation in resistance, and superconductivity emerges in a textured charge-density wave state induced by ionic gating. Our method of gate-controlled intercalation opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

  5. Gate-tunable phase transitions in thin flakes of 1T-TaS2.

    PubMed

    Yu, Yijun; Yang, Fangyuan; Lu, Xiu Fang; Yan, Ya Jun; Cho, Yong-Heum; Ma, Liguo; Niu, Xiaohai; Kim, Sejoong; Son, Young-Woo; Feng, Donglai; Li, Shiyan; Cheong, Sang-Wook; Chen, Xian Hui; Zhang, Yuanbo

    2015-03-01

    The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2. The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density wave states in 1T-TaS2 collapse in the two-dimensional limit at critical thicknesses. Meanwhile, at low temperatures, the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS2 thin flakes, with five orders of magnitude modulation in resistance, and superconductivity emerges in a textured charge-density wave state induced by ionic gating. Our method of gate-controlled intercalation opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

  6. Deviatoric stress-induced phase transitions in diamantane

    SciTech Connect

    Yang, Fan; Lin, Yu; Dahl, Jeremy E. P.; Carlson, Robert M. K.; Mao, Wendy L.

    2014-10-21

    The high-pressure behavior of diamantane was investigated using angle-dispersive synchrotron x-ray diffraction (XRD) and Raman spectroscopy in diamond anvil cells. Our experiments revealed that the structural transitions in diamantane were extremely sensitive to deviatoric stress. Under non-hydrostatic conditions, diamantane underwent a cubic (space group Pa3) to a monoclinic phase transition at below 0.15 GPa, the lowest pressure we were able to measure. Upon further compression to 3.5 GPa, this monoclinic phase transformed into another high-pressure monoclinic phase which persisted to 32 GPa, the highest pressure studied in our experiments. However, under more hydrostatic conditions using silicone oil as a pressure medium, the transition pressure to the first high-pressure monoclinic phase was elevated to 7–10 GPa, which coincided with the hydrostatic limit of silicone oil. In another experiment using helium as a pressure medium, no phase transitions were observed to the highest pressure we reached (13 GPa). In addition, large hysteresis and sluggish transition kinetics were observed upon decompression. Over the pressure range where phase transitions were confirmed by XRD, only continuous changes in the Raman spectra were observed. This suggests that these phase transitions are associated with unit cell distortions and modifications in molecular packing rather than the formation of new carbon-carbon bonds under pressure.

  7. Pressure-induced reversible phase transition in thiourea dioxide crystal

    SciTech Connect

    Wang, Qinglei; Yan, Tingting; Zhu, Hongyang; Cui, Qiliang; Zou, Bo E-mail: zoubo@jlu.edu.cn; Wang, Kai E-mail: zoubo@jlu.edu.cn

    2015-06-28

    The effect of high pressure on the crystal structure of thiourea dioxide has been investigated by Raman spectroscopy and angle-dispersive X-ray diffraction (ADXRD) in a diamond anvil cell up to 10.3 GPa. The marked changes in the Raman spectra at 3.7 GPa strongly indicated a structural phase transition associated with the distortions of hydrogen bonding. There were no further changes up to the maximum pressure of 10.3 GPa and the observed transition was completely reversible when the system was brought back to ambient pressure. This transition was further confirmed by the changes of ADXRD spectra. The high-pressure phase was indexed and refined to an orthorhombic structure with a possible space group Pbam. The results from the first-principles calculations suggested that this phase transition was mainly related to the changes of hydrogen-bonded networks in thiourea dioxide.

  8. Role of thermal heating on the voltage induced insulator-metal transition in VO2.

    PubMed

    Zimmers, A; Aigouy, L; Mortier, M; Sharoni, A; Wang, Siming; West, K G; Ramirez, J G; Schuller, Ivan K

    2013-02-01

    We show that the main mechanism for the dc voltage or dc current induced insulator-metal transition in vanadium dioxide VO(2) is due to local Joule heating and not a purely electronic effect. This "tour de force" experiment was accomplished by using the fluorescence spectra of rare-earth doped micron sized particles as local temperature sensors. As the insulator-metal transition is induced by a dc voltage or dc current, the local temperature reaches the transition temperature indicating that Joule heating plays a predominant role. This has critical implications for the understanding of the dc voltage or dc current induced insulator-metal transition and has a direct impact on applications which use dc voltage or dc current to externally drive the transition. PMID:23414038

  9. Ion irradiation induced structural and electrical transition in graphene

    SciTech Connect

    Zhou Yangbo; Wang Yifan; Xu Jun; Fu Qiang; Wu Xiaosong; Yu Dapeng; Liao Zhimin; Duesberg, Georg S.

    2010-12-21

    The relationship between the electrical properties and structure evolution of single layer graphene was studied by gradually introducing the gallium ion irradiation. Raman spectrums show a structural transition from nano-crystalline graphene to amorphous carbon as escalating the degree of disorder of the graphene sample, which is in correspondence with the electrical transition from a Boltzmann diffusion transport to a carrier hopping transport. The results show a controllable method to tune the properties of graphene.

  10. Doping induced Mott transition in the two dimensional Hubbard model

    NASA Astrophysics Data System (ADS)

    Sordi, Giovanni; Tremblay, A.-M. S.

    2010-03-01

    The description of the Mott transition by single-site dynamical mean-field theory is exact in infinite dimensions but, in two dimensions, substantial deviations from those results have been found for the interaction driven transition [1]. In addition, the experimentally relevant transition for layered systems such as the high-Tc cuprates is doping driven. We thus study this transition in the two dimensional Hubbard model on the square lattice using cluster dynamical mean-field theory with continuous-time quantum Monte Carlo in the hybridization expansion [2]. We find that the Mott transition is strongly influenced by the inclusion of short-range antiferromagnetic correlations. Doping of the Mott insulating state occurs gradually in the different momentum sectors, as found in previous studies [3], but in addition we find a first order transition between an incoherent metal and an insulator or between two incoherent metals, depending on interaction strength. Short range spin correlations create a pseudogap in a doping range that increases with interaction. [1] H. Park et al., PRL 101, 186403 (2008) [2] K. Haule, PRB 75, 155113 (2007) [3] E. Gull et al., arXiv:0909.1795 (2009)

  11. Superconductivity Series of Ion-gated Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Shi, Wu; Ye, Jianting; Zhang, Yijing; Suzuki, Ryuji; Yoshida, Masaro; Inoue, Naoko; Saito, Yu; Iwasa, Yoshihiro

    2015-03-01

    Semiconducting transition metal dichalcogenides (TMDs) have attracted considerable interest as typical two-dimensional (2D) materials. By mechanical cleavage, atomically flat and chemically stable thin flakes of TMDs can be readily obtained from bulk crystals. Recently, coupling with high efficient ionic media, TMD thin flakes have exhibited extraordinary electronic and opto-valleytronic properties in the form of electrical double layer transistors (EDLTs). The introduction of high-density carriers have also induced metal-insulator transition and superconductivity in MoS2, revealing an enhanced Tc and a dome-like phase diagram that are inaccessible through conventional chemically doping. In this work, we report the discovery of a superconductivity series based on a further exploration of other available semiconducting TMDs (MoSe2, MoTe2, WS2, WSe2) by using different ionic media. The present results not only complement important superconducting properties in TMDs, but also suggest a close correlation between transistor operation and the possibility of inducing superconductivity, providing general guidelines for the optimization of charge accumulation and the induction of superconductivity in other material series via ionic gating. Present address: University of Groningen.

  12. Temperature and magnetic field induced multiple magnetic transitions in DyAg(2).

    PubMed

    Arora, Parul; Chattopadhyay, M K; Sharath Chandra, L S; Sharma, V K; Roy, S B

    2011-02-01

    The magnetic properties of the rare-earth intermetallic compound DyAg(2) are studied in detail with the help of magnetization and heat capacity measurements. It is shown that the multiple magnetic phase transitions can be induced in DyAg(2) both by temperature and magnetic field. The detailed magnetic phase diagram of DyAg(2) is determined experimentally. It was already known that DyAg(2) undergoes an incommensurate to commensurate antiferromagnetic phase transition close to 10 K. The present experimental results highlight the first order nature of this phase transition, and show that this transition can be induced by magnetic field as well. It is further shown that another isothermal magnetic field induced transition or metamagnetic transition exhibited by DyAg(2) at still lower temperatures is also of first order nature. The multiple magnetic phase transitions in DyAg(2) give rise to large peaks in the temperature dependence of the heat capacity below 17 K, which indicates its potential as a magnetic regenerator material for cryocooler related applications. In addition it is found that because of the presence of the temperature and field induced magnetic phase transitions, and because of short range magnetic correlations deep inside the paramagnetic regime, DyAg(2) exhibits a fairly large magnetocaloric effect over a wide temperature window, e.g., between 10 and 60 K.

  13. Nature of unusual spontaneous and field-induced phase transitions in multiferroics RMn 2O 5

    NASA Astrophysics Data System (ADS)

    Pyatakov, A. P.; Kadomtseva, A. M.; Vorob'ev, G. P.; Popov, Yu. F.; Krotov, S. S.; Zvezdin, A. K.; Lukina, M. M.

    2009-04-01

    Complex magnetic, magnetoelectric and magnetoelastic studies of spontaneous and field-induced phase transitions in TmMn 2O 5 were carried out. In the vicinity of spontaneous phase transition temperatures (35 and 25 K) the magnetoelectric and magnetoelastic dependences demonstrated the jumps of polarization and magnetostriction induced by the field ˜150 kOe. These anomalies can be attributed to the influence of magnetic field on the conditions of incommensurate-commensurate phase transition at 35 K and the reverse one at 25 K. In b-axis dependences the magnetic field-induced spin-reorientation phase transition was also observed below 20 K. Finally the magnetoelectric anomaly associated with metamagnetic transition is observed below the temperature of rare-earth subsystem ordering at relatively small critical fields of 5 kOe. This variety of spontaneous and induced phase transitions in RMn 2O 5 stems from the interplay of three magnetic subsystems: Mn 3+, Mn 4+, R 3+. The comparison with YMn 2O 5 highlights the role of rare earth in low-temperature region (metamagnetic and spin-reorientation phase transitions), while the phase transition at higher temperatures between incommensurate and commensurate phases should be ascribed to the different temperature dependences of Mn 3+ and Mn 4+ ions. The strong correlation of magnetoelastic and magnetoelectric properties observed in the whole class of RMn 2O 5 highlights their multiferroic nature.

  14. A combined experimental and numerical investigation of roughness induced supersonic boundary layer transition

    NASA Astrophysics Data System (ADS)

    Zhao, Yunfei; Liu, Wei; Xu, Dan; Gang, Dundian; Yi, Shihe

    2016-01-01

    The effect of surface roughness on boundary layer transition is of great importance to hypersonic vehicles. In this paper, both experimental and numerical methods are used to investigate the laminar-turbulent transition of a Mach 3 flat-plate boundary layer induced by isolated roughness element. Good agreements are achieved between experimental data and high-order numerical simulations. It is observed that, with increasing height of roughness, the transition tends to move forward. Two different types of transition mechanisms are found according to the height of the roughness elements. For the smallest roughness height of h=1 mm, the shear layer instability in the wake region appears to be the leading mechanism for transition to turbulence. For two larger roughness elements of h=2 mm and h=4 mm, strong unsteadiness is developed from the upstream separation zone and transition is immediately accomplished, which indicates that the absolute instability in upstream separation zone dominates the transition.

  15. Determination of transition probabilities for the 3p → 3s transition array in neon using laser induced breakdown spectroscopy

    SciTech Connect

    Asghar, Haroon; Ali, Raheel; Baig, M. Aslam

    2013-12-15

    We present here a study of the optical emission spectra of the laser produced neon plasma generated by a Nd:YAG laser at 1064 nm. The spectra were recorded using the laser induced breakdown spectroscopy 2000 detection system comprising of five spectrometers covering the entire visible region. The observed spectra yield all the optically allowed transitions between the 2p{sup 5}3p upper and 2p{sup 5}3s lower configurations based levels. The relative line strengths of all the dipole allowed transitions have been determined using the intensity ratios and compared with the J-file sum rule. The absolute transition probabilities have been calculated by using the lifetimes of the upper levels and the intensities of the observed spectral lines and show good agreement with the literature values.

  16. Aqueous medium induced optical transitions in cerium oxide nanoparticles

    SciTech Connect

    Inerbaev, Talgat M.; Karakoti, Ajay S.; Kuchibhatla, S. V. N. T.; Kumar, Amit; Masunov, Artem E.; Seal, Sudipta

    2015-03-07

    Experimental and theoretical investigations were performed to investigate the effect of water on optical properties of nanoceria as a function of Ce3+ concentration. Theoretical studies based on density functional plane-wave calculations reveal that the indirect optical transitions in bare ceria nanoparticles are red-shifted with an increase in the concentration of Ce3+. However, ceria nanoparticles model with adsorbed water molecules show a blue shift in the indirect optical spectra under identical conditions. Direct optical transitions are almost independent of Ce3+ concentration but show a pronounced blue shift in the aqueous environment relative to the bare nanoparticles. The theoretical study is consistent with our experimental observation in difference of shift behaviour in bare and aqueous suspended ceria nanoparticles. This change from red- to blue-shift in indirect optical transitions is associated with the polarization effect of water molecules on f-electron states.

  17. Aqueous medium induced optical transitions in cerium oxide nanoparticles.

    PubMed

    Inerbaev, Talgat M; Karakoti, Ajay S; Kuchibhatla, Satyanarayana V N T; Kumar, Amit; Masunov, Artëm E; Seal, Sudipta

    2015-03-01

    Experimental and theoretical investigations were performed to investigate the effect of water on optical properties of nanoceria as a function of Ce(3+) concentration. Theoretical studies based on density functional plane-wave calculations reveal that the indirect optical transitions in bare ceria nanoparticles are red-shifted with an increase in the concentration of Ce(3+). However, ceria nanoparticles model with adsorbed water molecules show a blue shift in the indirect optical spectra under identical conditions. Direct optical transitions are almost independent of Ce(3+) concentration but show a pronounced blue shift in the aqueous environment relative to the bare nanoparticles. The theoretical study is consistent with our experimental observation in difference of shift behaviour in bare and aqueous suspended ceria nanoparticles. This change from red- to blue-shift in indirect optical transitions is associated with the polarization effect of water molecules on f-electron states. PMID:25655842

  18. Laser induced popcornlike conformational transition of nanodiamond as a nanoknife

    NASA Astrophysics Data System (ADS)

    Chang, Chia-Ching; Chen, Pei-Hsin; Chu, Hsueh-Liang; Lee, Tzu-Cheng; Chou, Ching-Chung; Chao, Jui-I.; Su, Chien-Ying; Chen, Jyh Shin; Tsai, Jin-Sheng; Tsai, Chuan-Mei; Ho, Yen-Peng; Sun, Kien Wen; Cheng, Chia-Liang; Chen, Fu-Rong

    2008-07-01

    Nanodiamond (ND) is surrounded by layers of graphite on its surface. This unique structure feature creates unusual fluorescence spectra, which can be used as an indicator to monitor its surface modification. Meanwhile, the impurity, nitroso (CNO) inside the ND can be photolyzed by two-photon absorption, releasing NO to facilitate the formation of a sp3 diamond structure in the core of ND and transforming it into a sp2 graphite structure. Such a conformational transition enlarges the size of ND from 8to90nm, resulting in a popcornlike structure. This transition reaction may be useful as nanoknives in biomedical application.

  19. Heating-induced freezing and melting transitions in charged colloids.

    PubMed

    Toyotama, Akiko; Yamanaka, Junpei

    2011-03-01

    We examine influence of temperature on the phase behavior of dilute aqueous dispersions of charged colloidal silica and polystyrene particles. They undergo either freezing or melting transitions with increasing temperature. Freezing occurs in the case of low-charge, low-salt colloids, and melting is observed in the case of high-charge, high-salt colloids. All of these phase transitions are thermoreversible. These intriguing behaviors can be qualitatively explained in terms of the decrease in the permittivity of water at elevated temperatures.

  20. The Characteristics Variation of Hepatic Progenitors after TGF-β1-Induced Transition and EGF-Induced Reversion.

    PubMed

    Wang, Ping; Cong, Min; Liu, Tianhui; Yang, Aiting; Sun, Guangyong; Zhang, Dong; Huang, Jian; Sun, Shujie; Mao, Jia; Ma, Hong; Jia, Jidong; You, Hong

    2016-01-01

    Profibrogenesis cytokine, transforming growth factor- (TGF-) β1, induces hepatic progenitors experiencing epithelial to mesenchymal transition (EMT) to matrix synthesis cells, even tumor initiating cells. Our previous data found that epidermal growth factor (EGF) blocks and reverses TGF-β1-induced transition. The aim of this study is to determine the characteristic changes of hepatic progenitors after TGF-β1-induced transition and EGF-induced reversion. Hepatic oval cells, rat hepatic progenitors, were isolated from rats fed a choline-deficient diet supplemented with ethionine. TGF-β1-containing medium was used for inducing EMT, while EGF-containing medium was used for reversing EMT. During TGF-β1-induced transition and EGF-induced reversion, hepatic oval cells sustained their progenitor cell marker expression, including α-fetoprotein, albumin, and cytokeratin-19. The proliferation ability and differentiation potential of these cells were suppressed by TGF-β1, while EGF resumed these capacities to the level similar to the control cells. RNA microarray analysis showed that most of the genes with significant changes after TGF-β1 incubation were recovered by EGF. Signal pathway analysis revealed that TGF-β1 impaired the pathways of cell cycle and cytochrome P450 detoxification, and EGF reverted TGF-β1 effects through activating MAPK and PI3K-Akt pathway. EGF reverses the characteristics impaired by TGF-β1 in hepatic oval cells, serving as a protective cytokine to hepatic progenitors. PMID:26955393

  1. Evolution of the spin-state transition with doping in La₁₋xSrxCoO₃

    DOE PAGESBeta

    Smith, R. X.; Hoch, M. J. R.; Moulton, W. G.; Kuhns, P. L.; Reyes, A. P.; Boebinger, G. S.; Zheng, H.; Mitchell, J. F.

    2012-08-20

    The thermally induced spin-state transition of Co³⁺ ions in the cobaltite LaCoO₃, found at temperatures in the range 40 to 120 K, has been the subject of extensive experimental and theoretical investigation. Much less is known about what happens to the spin-state transition in hole-doped La₁₋xSrxCoO₃ (LSCO). The present ¹³⁹La NMR experiments show that spin-state transitions persist in nanoscale hole-poor regions of the inhomogeneous doped material. In fact, thermally induced spin-state transitions remain important for doping levels close to the metal-insulator critical concentration of xC=0.17. This finding suggests that the unusual glassy behavior seen in doped LSCO for x<0.18 resultsmore » from the interplay of spin-state transitions in hole-poor regions and ferromagnetism in hole-rich regions.« less

  2. Transitions.

    ERIC Educational Resources Information Center

    Field, David; And Others

    1992-01-01

    Includes four articles: "Career Aspirations" (Field); "Making the Transition to a New Curriculum" (Baker, Householder); "How about a 'Work to School' Transition?" (Glasberg); and "Technological Improvisation: Bringing CNC to Woodworking" (Charles, McDuffie). (SK)

  3. Heterogeneous nucleation and growth dynamics in the light-induced phase transition in vanadium dioxide

    DOE PAGESBeta

    Brady, Nathaniel F.; Appavoo, Kannatassen; Seo, Minah; Nag, Joyeeta; Prasankumar, Rohit P.; Haglund, Richard F.; Hilton, David J.

    2016-03-02

    Here we report on ultrafast optical investigations of the light-induced insulator-to-metal phase transition in vanadium dioxide with controlled disorder generated by substrate mismatch. These results reveal common dynamics of this optically-induced phase transition that are independent of this disorder. Lastly, above the fluence threshold for completing the transition to the rutile crystalline phase, we find a common time scale, independent of sample morphology, of 40.5 ± 2 ps that is consistent with nucleation and growth dynamics of the R phase from the parent M1 ground state.

  4. Heterogeneous nucleation and growth dynamics in the light-induced phase transition in vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Brady, Nathaniel F.; Appavoo, Kannatassen; Seo, Minah; Nag, Joyeeta; Prasankumar, Rohit P.; Haglund, Richard F., Jr.; Hilton, David J.

    2016-03-01

    We report on ultrafast optical investigations of the light-induced insulator-to-metal phase transition in vanadium dioxide with controlled disorder generated by substrate mismatch. These results reveal common dynamics of this optically-induced phase transition that are independent of this disorder. Above the fluence threshold for completing the transition to the rutile crystalline phase, we find a common time scale, independent of sample morphology, of 40.5+/- 2 ps that is consistent with nucleation and growth dynamics of the R phase from the parent M1 ground state.

  5. The effect of adolescent- and parent-induced family transitions in middle adolescence.

    PubMed

    Fröjd, Sari; Marttunen, Mauri; Kaltiala-Heino, Riittakerttu

    2012-09-01

    In a longitudinal school-based survey of Finnish adolescents aged 15-16 years at baseline, we examined associations of parent-induced family transitions (parental separation, divorce, remarriage) and adolescent-induced family transitions (moving away from the parental home) with adolescent maladjustment (substance abuse and internalizing symptoms). The findings revealed that externalizing problems were associated with moving away from the parental home, whereas the risk of internalizing problems was associated with a change in the caretaking parent through parental marital transition or being taken into custody.

  6. Peer Rejection Cues Induce Cardiac Slowing after Transition into Adolescence

    ERIC Educational Resources Information Center

    Gunther Moor, Bregtje; Bos, Marieke G. N.; Crone, Eveline A.; van der Molen, Maurits W.

    2014-01-01

    The present study examined developmental and gender differences in sensitivity to peer rejection across the transition into adolescence by examining beat-by-beat heart rate responses. Children between the ages of 8 and 14 years were presented with unfamiliar faces of age-matched peers and were asked to predict whether they would be liked by the…

  7. Electric field induced morphological transitions in polyelectrolyte multilayers.

    PubMed

    Cho, Chungyeon; Jeon, Ju-Won; Lutkenhaus, Jodie; Zacharia, Nicole S

    2013-06-12

    In this work, the morphological transitions in weak polyelectrolyte (PE) multilayers (PEMs) assembled from linear poly(ethylene imine) (LPEI) and poly(acrylic acid) (PAA) upon application of an electric field were studied. Exposure to an electric field results in the creation of a porous structure, which can be ascribed to local changes in pH from the hydrolysis of water and subsequent structural rearrangements of the weak PE constituents. Depending on the duration of application of the field, the porous transition gradually develops into a range of structures and pore sizes. It was discovered that the morphological transition of the LbL films starts at the multilayer-electrode interface and propagates through the film. First an asymmetrical structure forms, consisting of microscaled pores near the electrode and nanoscaled pores near the surface in contact with the electrolyte solution. At longer application of the field the porous structures become microscaled throughout. The results revealed in this study not only demonstrate experimental feasibility for controlling variation in pore size and porosity of multilayer films but also deepens the understanding of the mechanism of the porous transition. In addition, electrical potential is used to release small molecules from the PEMs.

  8. Pressure-induced isostructural transition in PdN2

    SciTech Connect

    Aberg, D; Erhart, P; Crowhurst, J; Zaug, J M; Goncharov, A F; Sadigh, B

    2010-03-05

    We show that a synthesized Pd-N compound crystallize into the pyrite structure by comparison of experimental and calculated Raman intensities. The decreasing Raman intensities with decreasing pressure is explained by a closing of the fundamental band gap. We further discuss the experimental decomposition of this compound at 11 GPa in terms of an isostructural transition within the pyrite structure.

  9. Electric field induced morphological transitions in polyelectrolyte multilayers.

    PubMed

    Cho, Chungyeon; Jeon, Ju-Won; Lutkenhaus, Jodie; Zacharia, Nicole S

    2013-06-12

    In this work, the morphological transitions in weak polyelectrolyte (PE) multilayers (PEMs) assembled from linear poly(ethylene imine) (LPEI) and poly(acrylic acid) (PAA) upon application of an electric field were studied. Exposure to an electric field results in the creation of a porous structure, which can be ascribed to local changes in pH from the hydrolysis of water and subsequent structural rearrangements of the weak PE constituents. Depending on the duration of application of the field, the porous transition gradually develops into a range of structures and pore sizes. It was discovered that the morphological transition of the LbL films starts at the multilayer-electrode interface and propagates through the film. First an asymmetrical structure forms, consisting of microscaled pores near the electrode and nanoscaled pores near the surface in contact with the electrolyte solution. At longer application of the field the porous structures become microscaled throughout. The results revealed in this study not only demonstrate experimental feasibility for controlling variation in pore size and porosity of multilayer films but also deepens the understanding of the mechanism of the porous transition. In addition, electrical potential is used to release small molecules from the PEMs. PMID:23683121

  10. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    SciTech Connect

    Gao, Tao; Xu, Ruimin; Kong, Yuechan Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

    2015-06-15

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

  11. Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

    NASA Astrophysics Data System (ADS)

    Ye, G.; Wang, H.; Arulkumaran, S.; Ng, G. I.; Hofstetter, R.; Li, Y.; Anand, M. J.; Ang, K. S.; Maung, Y. K. T.; Foo, S. C.

    2013-09-01

    In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is reported. The ZrO2 AlGaN/GaN MISHEMTs showed improved maximum drain current density (Idmax) with high peak transconductance (gmmax) as comparison to Schottky-barrier-gate HEMTs (SB-HEMTs). Also compared to SB-HEMTs, reverse gate leakage current was four orders of magnitude lower and forward gate bias extended to +7.4 V. At energy from -0.29 eV to -0.36 eV, low interface trap state density evaluated by AC conductance and "Hi-Lo frequency" methods indicates good quality of atomic-layer-deposited ZrO2 dielectric layer.

  12. Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Kim, S. K.; Chang, D.; Xuan, Y.; Mohammadi, S.; Ye, P. D.; Lu, G.; Facchetti, A.; Marks, T. J.

    2007-08-01

    Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are presented. The application of SAND on compound semiconductors offers unique opportunities for high-performance devices. Thus, 1μm gate-length depletion-mode n-channel SAND/GaAs MISFETs exhibit low gate leakage current densities of 10-2-10-5A/cm2, a maximum drain current of 260mA/mm at 2V forward gate bias, and a maximum intrinsic transconductance of 127mS/mm. These devices achieve a current cutoff frequency (fT) of 10.6GHz and a maximum oscillation frequency (fmax) of 6.9GHz. Nearly hysteresis-free Ids-Vgs characteristics and low flicker noise indicate that a high-quality SAND-GaAs interface is achieved.

  13. Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal-insulator-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Kobayashi, Atsushi; Lye, Khe Shin; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-08-01

    We grew In-rich InxGa1-xN films on yttria-stabilized zirconia (YSZ) substrates at low temperatures by pulsed sputtering deposition. It was found that single-crystal InxGa1-xN (0.63 ≤ x ≤ 0.82) films can be prepared without significant compositional fluctuations at growth temperatures below 500 °C. It was also found that the electrical properties of InGaN are strongly dependent on In composition, growth temperature, and film polarity. N-channel operation of the metal-insulator-semiconductor field-effect transistor (MISFET) with an ultrathin InGaN channel on the YSZ substrates was successfully demonstrated. These results indicate that an InGaN-based MISFET is a promising device for next-generation high-speed electronics.

  14. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

    SciTech Connect

    Popovici, M. Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J.-L.; Van Elshocht, S.; Jurczak, M.

    2014-02-24

    Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.

  15. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

    SciTech Connect

    Chen, Yiren; Song, Hang E-mail: lidb@ciomp.ac.cn; Jiang, Hong; Li, Zhiming; Zhang, Zhiwei; Sun, Xiaojuan; Li, Dabing E-mail: lidb@ciomp.ac.cn; Miao, Guoqing

    2014-11-10

    Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.

  16. Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers

    NASA Astrophysics Data System (ADS)

    Wang, X.; Zhang, G. Z.; Xu, Y.; Gan, X. W.; Chen, C.; Wang, Z.; Wang, Y.; Wang, J. L.; Wang, T.; Wu, H.; Liu, C.

    2016-01-01

    InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10-9 A/cm2 at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.

  17. Selective activation of cholinergic basal forebrain neurons induces immediate sleep-wake transitions.

    PubMed

    Han, Yong; Shi, Yu-feng; Xi, Wang; Zhou, Rui; Tan, Zhi-bing; Wang, Hao; Li, Xiao-ming; Chen, Zhong; Feng, Guoping; Luo, Minmin; Huang, Zhi-li; Duan, Shumin; Yu, Yan-qin

    2014-03-17

    The basal forebrain (BF) plays a crucial role in cortical activation [1, 2]. However, the exact role of cholinergic BF (ch-BF) neurons in the sleep-wake cycle remains unclear [3, 4]. We demonstrated that photostimulation of ch-BF neurons genetically targeted with channelrhodopsin 2 (ChR2) was sufficient to induce an immediate transition to waking or rapid eye movement (REM) sleep from slow-wave sleep (SWS). Light stimulation was most likely to induce behavioral arousal during SWS, but not during REM sleep, a result in contrast to the previously reported photostimulation of noradrenergic or hypocretin neurons that induces wake transitions from both SWS and REM sleep. Furthermore, the ratio of light-induced transitions from SWS to wakefulness or to REM sleep did not significantly differ from that of natural transitions, suggesting that activation of ch-BF neurons facilitates the transition from SWS but does not change the direction of the transition. Excitation of ch-BF neurons during wakefulness or REM sleep sustained the cortical activation. Stimulation of these neurons for 1 hr induced a delayed increase in the duration of wakefulness in the subsequent inactive period. Our results suggest that activation of ch-BF neurons alone is sufficient to suppress SWS and promote wakefulness and REM sleep.

  18. Temperature dependent electrical characterisation of Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

    SciTech Connect

    Shetty, Arjun Vinoy, K. J.; Roul, Basanta; Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Krupanidhi, S. B.

    2015-09-15

    This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO{sub 2} (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO{sub 2}/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO{sub 2}/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights.

  19. Au/Cr-ZnO-Ni structured metal-insulator-metal diode fabrication using Langmuir-Blodgett technique for infrared sensing

    NASA Astrophysics Data System (ADS)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2016-05-01

    The thin nanolayer film of ZnO was synthesized through Langmuir-Blodgett (LB) organic precursor film. The zinc stearate monolayer was formed at air-water interface using zinc acetate as a subphase. The zinc stearate monolayers were deposited on silicon (Si), glass, and gold (Au)/chromium (Cr) plated Silicon (Si) substrates using LB technique. Later, the zinc stearate multilayers LB films on various substrates were annealed at two different temperatures (300oC and 550oC) for the fabrication of zinc oxide (ZnO) nanolayer film. The zinc stearate monolayers as well zinc oxide (ZnO) nanolayer films were characterized using atomic force microscopy (AFM) and X-ray diffraction techniques. The X-ray diffraction measurement has shown the hexagonal wurtzite structure of the ZnO nanolayer on the substrate. The average surface roughness was estimated to be 1.076 nm using AFM technique. The metal-insulator-metal (MIM) diode structure was realized by sandwiching ZnO nanolayer film between thin layer of Gold (Au)/Chromium (Cr) and Nickel (Ni) on silicon substrates. The electron tunneling conduction mechanism is understood through the current-voltage (I-V) characteristics of MIM diode. The highest measured sensitivity magnitude of 20 in inverse of voltage (V-1) with rectification ratio of nearly 10 at +/-400 mV in MIM diode is an indicative of its potential application in infrared sensing applications. However, the thin film of ZnO synthesized using LB film as an insulating layer in metal-insulator-metal diode structure was studied for the first time.

  20. Dissipation-induced quantum phase transition in a quantum box

    NASA Astrophysics Data System (ADS)

    Borda, László; Zaránd, Gergely; Simon, Pascal

    2005-10-01

    In a recent work, Le Hur has shown, using perturbative arguments, that dissipative coupling to gate electrodes may play an important role in a quantum box near its degeneracy point [K. Le Hur, Phys. Rev. Lett. 92, 196804 (2004)]: While quantum fluctuations of the charge of the dot tend to round Coulomb blockade charging steps of the box, strong enough dissipation suppresses these fluctuations and leads to the reappearance of sharp charging steps. In the present paper, we study this quantum phase transition in detail using bosonization and the numerical renormalization group in the limit of vanishing level spacing and map out the phase diagram using these nonperturbative methods. We also discuss the properties of the renormalized lead-dot conductance in the vicinity of the phase transition and determine the scaling properties of the dynamically generated crossover scale analytically.