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Sample records for industry copper indium

  1. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    DOEpatents

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  2. Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride

    SciTech Connect

    Moskowitz, P.D.; Bernholc, N.; DePhillips, M.P.; Viren, J.

    1995-07-06

    Polycrystalline thin-film photovoltaic modules made from copper indium diselenide (CIS), copper gallium diselenide (CGS), and cadmium telluride (CdTe) arc nearing commercial development. A wide range of issues are being examined as these materials move from the laboratory to large-scale production facilities to ensure their commercial success. Issues of traditional interest include module efficiency, stability and cost. More recently, there is increased focus given to environmental, health and safety issues surrounding the commercialization of these same devices. An examination of the toxicological properties of these materials, and their chemical parents is fundamental to this discussion. Chemicals that can present large hazards to human health or the environment are regulated often more strictly than those that are less hazardous. Stricter control over how these materials are handled and disposed can increase the costs associated with the production and use of these modules dramatically. Similarly, public perception can be strongly influenced by the inherent biological hazard that these materials possess. Thus, this report: presents a brief background tutorial on how toxicological data are developed and used; overviews the toxicological data available for CIS, CGS and CdTe; develops ``reference doses`` for each of these compounds; compares the reference doses for these compounds with those of their parents; discusses the implications of these findings to photovoltaics industry.

  3. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    DOEpatents

    Curtis, Calvin J.; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S.; Nekuda, Jennifer A.

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  4. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  5. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  6. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  7. Modeling of Copper Indium/Gallium Diselenide Superlattices

    NASA Astrophysics Data System (ADS)

    Scurlock, Steven

    2005-03-01

    The copper indium/gallium diselenide superlattice is investigated numerically for different layer lengths of this particular lattice matched crystal. The main emphasis is on applying the Kronig-Penny model for the relevant band gap energies. By varying the sizes of the layers, the region where superlattice behavior should exist is determined.

  8. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOEpatents

    Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L. , Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  9. Chemical deposition and characterization of copper indium disulphide thin films

    NASA Astrophysics Data System (ADS)

    Pathan, H. M.; Lokhande, C. D.

    2004-12-01

    A simple chemical deposition method was used to prepare copper indium disulphide thin films. The method is based on sequential immersion of substrate into different cationic and anionic precursor solutions and rinsing before every immersion with double distilled water. In the present investigation, CuInS 2 films have been deposited using chemical deposition method. These films were characterized for their structural, surface morphological, compositional and electrical properties by using X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Rutherford back scattering (RBS), electrical resistivity and thermoemf measurement techniques.

  10. Liquid phase synthesis of copper indium diselenide nanoparticles

    SciTech Connect

    Jakhmola, Priyanka; Agarwal, Garima; Jha, Prafulla K.; Bhatnagar, S. P.

    2014-04-24

    Nanoparticles of Copper Indium diselenide (CuInSe{sub 2}), belongs to I-III-VI{sub 2} family has been synthesized via liquid phase route using ethylenediamine as a solvent. Characterization of as-grown particles is done by XRD, HRTEM, DLS, optical microscopy and UV-Vis spectroscopy. X-ray diffraction pattern confirmed that the CuInSe2 nanoparticles obtained reveals chalcopyrite structure. Particle size evaluated from dynamic light scattering of as grown particle possessing radius of 90 nm. The bandgap of 1.05eV is obtained from UV-Vis spectrum which will applicable to the solar cell devices.

  11. Photoconductivity in reactively evaporated copper indium selenide thin films

    SciTech Connect

    Urmila, K. S. Asokan, T. Namitha Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

    2014-01-28

    Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup −5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 10{sup 6} cm{sup −1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

  12. Growth of copper indium sulphide films by thermal evaporation of mixtures of copper sulphide and indium sulphide powders

    SciTech Connect

    Rao, Pritty; Kumar, Sanjiv Sahoo, N.K.

    2013-08-01

    Graphical abstract: - Highlights: • CuInS{sub 2} films are prepared by resistively heating mixtures of CuS and In{sub 2}S{sub 3}. • As deposited films consist of Cu{sub 7}S{sub 4}, InS and In{sub 2}S{sub 3}. • These species react during vacuum annealing to produce CuInS{sub 2} films. • The films bear stoichiometric or Cu-rich composition. • Their electrical and optical features are conducive for photovoltaic applications. - Abstract: The physical evaporation of a 1:1 mixture of copper sulphide (CuS) and indium sulphide (In{sub 2}S{sub 3}) powders by resistive heating followed by the vacuum annealing of the resulting films at 723 K produces copper indium sulphide (CuInS{sub 2}) films with about 95% phase purity. Composed of sub-micron sized grains, the films bear stoichiometric or Cu-rich composition and are endowed with p-type conductivity, a band gap of about 1.5 eV and an absorption coefficient of about 4 × 10{sup 4} cm{sup −1} in visible region. Mechanistically, the formation of CuInS{sub 2} films takes place as a result of solid state reaction among Cu{sub 7}S{sub 4}, InS and In{sub 2}S{sub 3} in the condensed phase. These intermediate species are produced from the decomposition of CuInS{sub 2} formed in the evaporating mixture due to the reaction between CuS and In{sub 2}S{sub 3}, and excess CuS. Process simplicity and the absence of a sulphurisation step make this approach attractive for synthesising CuInS{sub 2} absorber layers for photovoltaic applications.

  13. Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

  14. Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials

    PubMed Central

    Gustafsson, Anna M. K.; Björefors, Fredrik; Steenari, Britt-Marie; Ekberg, Christian

    2015-01-01

    Recycling of the semiconductor material copper indium gallium diselenide (CIGS) is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric acid solutions of dissolved selenium-depleted material. Suitable potentials for the reduction of copper and indium were determined to be −0.5 V and −0.9 V (versus the Ag/AgCl reference electrode), respectively, using cyclic voltammetry. Electrodeposition of first copper and then indium from a solution containing the dissolved residue from the selenium separation and ammonium chloride in 1 M HCl gave a copper yield of 100.1 ± 0.5% and an indium yield of 98.1 ± 2.5%. The separated copper and indium fractions contained no significant contamination of the other elements. Gallium remained in solution together with a small amount of indium after the separation of copper and indium and has to be recovered by an alternative method since electrowinning from the chloride-rich acid solution was not effective. PMID:26347901

  15. Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials.

    PubMed

    Gustafsson, Anna M K; Björefors, Fredrik; Steenari, Britt-Marie; Ekberg, Christian

    2015-01-01

    Recycling of the semiconductor material copper indium gallium diselenide (CIGS) is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric acid solutions of dissolved selenium-depleted material. Suitable potentials for the reduction of copper and indium were determined to be -0.5 V and -0.9 V (versus the Ag/AgCl reference electrode), respectively, using cyclic voltammetry. Electrodeposition of first copper and then indium from a solution containing the dissolved residue from the selenium separation and ammonium chloride in 1 M HCl gave a copper yield of 100.1 ± 0.5% and an indium yield of 98.1 ± 2.5%. The separated copper and indium fractions contained no significant contamination of the other elements. Gallium remained in solution together with a small amount of indium after the separation of copper and indium and has to be recovered by an alternative method since electrowinning from the chloride-rich acid solution was not effective. PMID:26347901

  16. Nanosecond Laser Lift-Off of a Copper-Indium-Diselenide Thin Film at a Wavelength of 1342 nm

    NASA Astrophysics Data System (ADS)

    Moser, R.; Domke, M.; Marowsky, G.; Huber, H. P.

    Indirectly induced laser lift-off occurs at the interface of a transparent film and an underlying absorbing substrate. Induced laser ablation often referred to as "laser lift-off" is much more energy efficient than direct laser writing. In this paper we report on the selective laser structuring of copper-indium-diselenide (CIS) film on a molybdenum layer at a wavelength of 1342 nm with nanosecond pulses by indirectly induced laser ablation. A wavelength of 1342 nm was chosen, because the CIS layer can act as a transparent film there and this wavelength can be generated with industrial reliability by a laser transition in Nd:Vanadate.

  17. Environmental and health aspects of copper-indium-diselenide thin-film photovoltaic modules

    SciTech Connect

    Steinberger, H.; Thumm, W.; Freitag, R.; Moskowitz, P.D.; Chapin, R.

    1994-12-31

    Copper-indium-diselenide (CIS) is a semiconductor compound that can be used to produce thin-film photovoltaic modules. There is on-going research being conducted by various federal agencies and private industries to demonstrate the commercial viability of this material. Because this is a new technology, and because scant information about the health and environmental hazards associated with the use of this material is available, studies have been initiated to characterize the environmental mobility and environmental toxicology of this compound. The objective of these studies is to identify the environmental and health hazards associated with the production, use, and disposal of CIS thin-film photovoltaic modules. The program includes both experimental and theoretical components. Theoretical studies are being undertaken to estimate material flows through the environment for a range of production options as well as use and disposal scenarios. The experimental programs characterize the physical, chemical e.g. leachability and biological parameters e.g. EC{sub 50} in daphnia and algae, and feeding studies in rats.

  18. Observation of compositional domains within individual copper indium sulfide quantum dots.

    PubMed

    Harvie, Andrew J; Booth, Matthew; Chantry, Ruth L; Hondow, Nicole; Kepaptsoglou, Demie M; Ramasse, Quentin M; Evans, Stephen D; Critchley, Kevin

    2016-09-28

    The origin of photoluminescence in copper indium sulfide (CIS) quantum dots (Qdots) has previously been ascribed to a donor-acceptor pair (DAP) recombination, with a crystal lattice defect implicated as the origin of the donor state. In this study, electron energy-loss spectroscopy (EELS) was used to observe defect-rich compositional domains within individual CIS Qdots, supporting a model of defect-state-mediated photoluminescence for these particles, and identifying them as an ideal model system for future study of lattice defects on Qdot properties. PMID:27465708

  19. Waste reduction options for manufacturers of copper indium diselenide photovoltaic cells

    SciTech Connect

    DePhillips, M.P.; Fthenakis, V.M.; Moskowitz, P.D.

    1994-03-01

    This paper identifies general waste reduction concepts and specific waste reduction options to be used in the production of copper indium diselenide (CIS) photovoltaic cells. A general discussion of manufacturing processes used for the production of photovoltaic cells is followed by a description of the US Environmental Protection Agency (EPA) guidelines for waste reduction (i.e., waste minimization through pollution prevention). A more specific discussion of manufacturing CIS cells is accompanied by detailed suggestions regarding waste minimization options for both inputs and outputs for ten stages of this process. Waste reduction from inputs focuses on source reduction and process changes, and reduction from outputs focuses on material reuse and recycling.

  20. In vitro corrosion behaviour and microhardness of high-copper amalgams with platinum and indium.

    PubMed

    Ilikli, B G; Aydin, A; Işimer, A; Alpaslan, G

    1999-02-01

    Samples prepared from Luxalloy, GS-80, Permite-C and Logic and polished after 24 h by traditional methods were stored in polypropylene tubes containing phosphate-buffered saline solutions (pH 3.5 and 6.5) and distilled water. The amounts of mercury, silver, tin, copper, zinc, platinum and indium in the test solutions were determined at the first, second, eighth, 52nd and 78th week by atomic absorption spectrometry. At the end of the eighth week the amalgam samples were removed from solutions and evaluated by Rockwell Super Scial Microhardness tester. Statistically significant low amounts of metal ions were measured for Permite-C containing indium and Logic containing platinum. The microhardness test results showed that there were statistically significant increases in the microhardness of Permite-C and Logic. As a result it was shown that the amalgam samples were affected from corrosion conditions to different degrees. Sample of the Logic group that was stored in distilled water, showed smoother surface properties than other amalgam samples containing high copper. However, it was observed that samples of Permite-C group had the smoothest surface properties.

  1. Synthesis Characterization and Decomposition Studies of tris[N-N-dibenzyidithocarbaso)Indium (III) Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    NASA Technical Reports Server (NTRS)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.

    2005-01-01

    This paper presents the results of the synthesis characterization and decomposition studies of tris[N-N-dibenzyidithocarbaso)Indium (III) with chemical spray deposition of polycrystalline CuInS2 on Copper Films.

  2. Energy and materials flows in the copper industry

    SciTech Connect

    Gaines, L.L.

    1980-12-01

    The copper industry comprises both the primary copper industry, which produces 99.9%-pure copper from copper ore, and the secondary copper industry, which salvages and recycles copper-containing scrap metal to extract pure copper or copper alloys. The United States uses about 2 million tons of copper annually, 60% of it for electrical applications. Demand is expected to increase less than 4% annually for the next 20 years. The primary copper industry is concentrated in the Southwest; Arizona produced 66% of the 1979 total ore output. Primary production uses about 170 x 10/sup 12/ Btu total energy annually (about 100 x 10/sup 6/ Btu/ton pure copper produced from ore). Mining and milling use about 60% of the total consumption, because low-grade ore (0.6% copper) is now being mined. Most copper is extracted by smelting sulfide ores, with concomitant production of sulfur dioxide. Clean air regulations will require smelters to reduce sulfur emissions, necessitating smelting process modifications that could also save 20 x 10/sup 12/ Btu (10 x 10/sup 6/ Btu/ton of copper) in smelting energy. Energy use in secondary copper production averages 20 x 10/sup 6/ Btu/ton of copper. If all copper products were recycled, instead of the 30% now salvaged, the energy conservation potential would be about one-half the total energy consumption of the primary copper industry.

  3. Transmission electron microscopy of the amorphization of copper indium diselenide by in situ ion irradiation

    SciTech Connect

    Hinks, J. A.; Edmondson, P. D.

    2012-03-01

    Copper indium diselenide (CIS), along with its derivatives Cu(In,Ga)(Se,S){sub 2}, is a prime candidate for use in the absorber layers of photovoltaic devices. Due to its ability to resist radiation damage, it is particularly well suited for use in extraterrestrial and other irradiating environments. However, the nature of its radiation hardness is not well understood. In this study, transmission electron microscopy (TEM) with in situ ion irradiation was used to monitor the dynamic microstructural effects of radiation damage on CIS. Samples were bombarded with 400 keV xenon ions to create large numbers of atomic displacements within the thickness of the TEM samples and thus explore the conditions under which, if any, CIS could be amorphized. By observing the impact of heavily damaging radiation in situ--rather than merely the end-state possible in ex situ experiments--at the magnifications allowed by TEM, it was possible to gain an understanding of the atomistic processes at work and the underlying mechanism that give rise to the radiation hardness of CIS. At 200 K and below, it was found that copper-poor samples could be amorphized and copper-rich samples could not. This difference in behavior is linked to the crystallographic phases that are present at different compositions. Amorphization was found to progress via a combination of one- and two-hit processes. The radiation hardness of CIS is discussed in terms of crystallographic structures/defects and the consequences these have for the ability of the material to recover from the effects of displacing radiation.

  4. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

    DOEpatents

    Bhattacharya, Raghu N.; Hasoon, Falah S.; Wiesner, Holm; Keane, James; Noufi, Rommel; Ramanathan, Kannan

    1999-02-16

    A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

  5. A nanoparticle ink printing process for all printed thin film copper-indium-selenide (CIS) solar cells

    NASA Astrophysics Data System (ADS)

    Li, X. Charles; Soltesz, Istvan; Wu, Mindy; Ziobro, Frank; Amidon, Roger; Kiss, Zoltan

    2008-08-01

    Copper indium selenide (CIS) or its derivatives (such as gallium doped CIS and sulfur substituted CIS) are considered the best optical absorber material used in polycrystalline thin film photovoltaic solar cells due to their favorable electrical and optical properties, and long term stability. To develop a low cost yet high throughput thin film deposition process with both composition and film uniformity control, precursor ink has been formulated using nanoparticle metal oxide of copper and indium in an organic solvent system dissolved with selenium or sulfur. Smooth thin film of precursor oxide mixture has been demonstrated by wet printing process. Upon heat treatment of the precursor thin film under atmosphere of selenium and/or sulfur, copper-indium selenide and/or sulfide (CIS) was formed. Several approaches of nanoparticle ink coating processes have been investigated through spin-coating, screen-printing and contact printing. For using glass substrate, contact printing demonstrated superior uniformity and composition control. By using a post-thermal treatment process on the nanoparticle-coated film, good morphology thin film with composition control was achieved. Both the chemical composition and physical morphology has been investigated using ICP-OES and XRD measurements. Based on molybdenum glass substrate, all-printed solar cells have been demonstrated.

  6. Synthesis, Characterization, and Processing of Copper, Indium, and Gallium Dithiocarbamates for Energy Conversion Applications

    NASA Technical Reports Server (NTRS)

    Duraj, S. A.; Duffy, N. V.; Hepp, A. F.; Cowen, J. E.; Hoops, M. D.; Brothrs, S. M.; Baird, M. J.; Fanwick, P. E.; Harris, J. D.; Jin, M. H.-C.

    2009-01-01

    Ten dithiocarbamate complexes of indium(III) and gallium(III) have been prepared and characterized by elemental analysis, infrared spectra and melting point. Each complex was decomposed thermally and its decomposition products separated and identified with the combination of gas chromatography/mass spectrometry. Their potential utility as photovoltaic materials precursors was assessed. Bis(dibenzyldithiocarbamato)- and bis(diethyldithiocarbamato)copper(II), Cu(S2CN(CH2C6H5)2)2 and Cu(S2CN(C2H5)2)2 respectively, have also been examined for their suitability as precursors for copper sulfides for the fabrication of photovoltaic materials. Each complex was decomposed thermally and the products analyzed by GC/MS, TGA and FTIR. The dibenzyl derivative complex decomposed at a lower temperature (225-320 C) to yield CuS as the product. The diethyl derivative complex decomposed at a higher temperature (260-325 C) to yield Cu2S. No Cu containing fragments were noted in the mass spectra. Unusual recombination fragments were observed in the mass spectra of the diethyl derivative. Tris(bis(phenylmethyl)carbamodithioato-S,S'), commonly referred to as tris(N,N-dibenzyldithiocarbamato)indium(III), In(S2CNBz2)3, was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1(bar) with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry, and Fourier transform infrared (FT-IR) spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS2 and benzyl moieties in to the gas phase, resulting in bulk In2S3. Preliminary spray CVD experiments indicate that In(S2CNBz2)3 decomposed on a Cu substrate reacts to produce

  7. Brazing open cell reticulated copper foam to stainless steel tubing with vacuum furnace brazed gold/indium alloy plating

    DOEpatents

    Howard, Stanley R.; Korinko, Paul S.

    2008-05-27

    A method of fabricating a heat exchanger includes brush electroplating plated layers for a brazing alloy onto a stainless steel tube in thin layers, over a nickel strike having a 1.3 .mu.m thickness. The resultant Au-18 In composition may be applied as a first layer of indium, 1.47 .mu.m thick, and a second layer of gold, 2.54 .mu.m thick. The order of plating helps control brazing erosion. Excessive amounts of brazing material are avoided by controlling the electroplating process. The reticulated copper foam rings are interference fit to the stainless steel tube, and in contact with the plated layers. The copper foam rings, the plated layers for brazing alloy, and the stainless steel tube are heated and cooled in a vacuum furnace at controlled rates, forming a bond of the copper foam rings to the stainless steel tube that improves heat transfer between the tube and the copper foam.

  8. Impact of atmospheric species on copper indium gallium selenide solar cell stability: an overview

    NASA Astrophysics Data System (ADS)

    Theelen, Mirjam

    2016-01-01

    An overview of the measurement techniques and results of studies on the stability of copper indium gallium selenide (CIGS) solar cells and their individual layers in the presence of atmospheric species is presented: in these studies, Cu(In,Ga)Se2 solar cells, their molybdenum back contact, and their ZnO:Al front contact were exposed to liquid water purged with gases from the atmosphere, like carbon dioxide (CO2), oxygen (O2), nitrogen (N2), and air. The samples were analyzed before, during, and after exposure in order to define their stability under these conditions. The complete CIGS solar cells as well as the ZnO:Al front contact degraded rapidly when exposed to H2O combined with CO2, while they were relatively stable in H2O purged with O2 or N2. This was caused by either degradation of the grain boundaries in the ZnO:Al film or by the dissolution of part of this film. Uncovered molybdenum films, on the other hand, oxidized rapidly in the presence of H2O and O2, while they were more stable in the presence of H2O with N2 and/or CO2.

  9. Point contacts at the copper-indium-gallium-selenide interface—A theoretical outlook

    NASA Astrophysics Data System (ADS)

    Bercegol, Adrien; Chacko, Binoy; Klenk, Reiner; Lauermann, Iver; Lux-Steiner, Martha Ch.; Liero, Matthias

    2016-04-01

    For a long time, it has been assumed that recombination in the space-charge region of copper-indium-gallium-selenide (CIGS) is dominant, at least in high efficiency solar cells with low band gap. The recent developments like potassium fluoride post deposition treatment and point-contact junction may call this into question. In this work, a theoretical outlook is made using three-dimensional simulations to investigate the effect of point-contact openings through a passivation layer on CIGS solar cell performance. A large set of solar cells is modeled under different scenarios for the charged defect levels and density, radius of the openings, interface quality, and conduction band offset. The positive surface charge created by the passivation layer induces band bending and this influences the contact (CdS) properties, making it beneficial for the open circuit voltage and efficiency, and the effect is even more pronounced when coverage area is more than 95%, and also makes a positive impact on the device performance, even in the presence of a spike at CIGS/CdS heterojunction.

  10. Field Effect Transistors Using Atomically Thin Layers of Copper Indium Selenide (CuInSe)

    NASA Astrophysics Data System (ADS)

    Patil, Prasanna; Ghosh, Sujoy; Wasala, Milinda; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel; Talapatra, Saikat

    We will report fabrication of field-effect transistors (FETs) using few-layers of Copper Indium Selenide (CuInSe) flakes exfoliated from crystals grown using chemical vapor transport technique. Our transport measurements indicate n-type FET with electron mobility µ ~ 3 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. Mobility can be further increased significantly when ionic liquid 1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6) is used as top gate. Similarly subthreshold swing can be further improved from 103 V/dec to 0.55 V/dec by using ionic liquid as a top gate. We also found ON/OFF ratio of ~ 102 for both top and back gate. Comparison between ionic liquid top gate and SiO2 back gate will be presented and discussed. This work is supported by the U.S. Army Research Office through a MURI Grant # W911NF-11-1-0362.

  11. The dissociation of excitons at indium tin oxide-copper phthalocyanine interface in organic solar cells

    NASA Astrophysics Data System (ADS)

    Sun, X. Y.; Song, Q. L.; Wang, M. L.; Ding, X. M.; Hou, X. Y.; Zhou, Z. G.; Li, F. Y.

    2008-11-01

    Exciton dissociation process at indium tin oxide (ITO)/copper phthalocyanine (CuPc) interface of ITO/CuPc(370 nm)/Al is studied by transient photovoltage method. A negative-to-positive change in the polarity of photovoltage upon pulsed laser irradiation is observed in CuPc thin film. The polarity change is regarded as a summation of the effect of exciton dissociation at ITO/CuPc interface (fast process) and that of free carrier separation by built-in field (slow process). Further experiments confirm the existence of exciton dissociation at ITO/CuPc interface, and the direction of which is electron injected into ITO, with holes left in CuPc film. This is opposite to that of the interfacial dissociation at donor/acceptor (D/A) interface in single heterojunction cells (ITO/D/A/buffer/Al). 3-nm-thick LiF insulating layer is inserted between ITO and CuPc to inhibit the exciton dissociation at ITO/CuPc interface. Thereby, the open-circuit voltage and power conversion efficiency of the single layer cell have been increased by several times.

  12. Flexible copper-indium-diselenide films and devices for space applications

    NASA Technical Reports Server (NTRS)

    Armstrong, J. H.; Pistole, C. O.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

    1991-01-01

    With the ever increasing demands on space power systems, it is imperative that low cost, lightweight, reliable photovoltaics be developed. One avenue of pursuit for future space power applications is the use of low cost, lightweight flexible PV cells and arrays. Most work in this area assumes the use of flexible amorphous silicon (a-Si), despite its inherent instability and low efficiencies. However, polycrystalline thin film PV such as copper-indium-diselenide (CIS) are inherently more stable and exhibit better performance than a-Si. Furthermore, preliminary data indicate that CIS also offers exciting properties with respect to space applications. However, CIS has only heretofore only produced on rigid substrates. The implications of flexible CIS upon present and future space power platforms was explored. Results indicate that space qualified CIS can dramatically reduce the cost of PV, and in most cases, can be substituted for silicon (Si) based on end-of-life (EOL) estimations. Furthermore, where cost is a prime consideration, CIS can become cost effective than gallium arsenide (GaAs) in some applications. Second, investigations into thin film deposition on flexible substrates were made, and data from these tests indicate that fabrication of flexible CIS devices is feasible. Finally, data is also presented on preliminary TCO/CdS/CuInSe2/Mo devices.

  13. Single-Step Production of Nanostructured Copper-Nickel (CuNi) and Copper-Nickel-Indium (CuNiIn) Alloy Particles

    NASA Astrophysics Data System (ADS)

    Apaydın, Ramazan Oğuzhan; Ebin, Burçak; Gürmen, Sebahattin

    2016-07-01

    Nanostructured copper-nickel (CuNi) and copper-nickel-indium (CuNiIn) alloy particles were produced from aqueous solutions of copper, nickel nitrates and indium sulfate by hydrogen reduction-assisted ultrasonic spray pyrolysis. The effects of reduction temperatures, at 973 K, 1073 K, and 1173 K (700 °C, 800 °C, and 900 °C), on the morphology and crystalline structure of the alloy particles were investigated under the conditions of 0.1 M total precursor concentration and 0.5 L/min H2 volumetric flow rate. X-ray diffraction studies were performed to investigate the crystalline structure. Particle size and morphology were investigated by scanning electron microscope and energy-dispersive spectroscopy was applied to determine the chemical composition of the particles. Spherical nanocrystalline binary CuNi alloy particles were prepared in the particle size range from 74 to 455 nm, while ternary CuNiIn alloy particles were obtained in the particle size range from 80 to 570 nm at different precursor solution concentrations and reduction temperatures. Theoretical and experimental chemical compositions of all the particles are nearly the same. Results reveal that the precursor solution and reduction temperature strongly influence the particle size of the produced alloy particles.

  14. Heterojunction between the delafossite TCO n-copper indium oxide and p-Si for solar cell applications

    NASA Astrophysics Data System (ADS)

    Keerthi, K.; Masuzawa, T.; Nair, B. G.; Saito, I.; Okano, K.; Johns, N.; Philip, R. R.

    2016-05-01

    Junction formation of n-copper indium oxide (CIO) (extrinsically undoped) with p-Si leading to conversion of photons in the UV-Vis range is being reported for the first time. I-V and temporal photoconductivity data confirm positively the carrier generation in CIO under irradiation while optical absorbance data furnish its band gap to be ~ 3.1eV. Ultraviolet photoelectron spectroscopy is used to study the electronic band structure of CIO on Si and to construct a schematic diagram of the hetero-junction to explain the observed photovoltaic phenomena.

  15. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes.

    PubMed

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-05-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11kg/m(3) of copper and 1.35kg/m(3) of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100-500nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. PMID:26918838

  16. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes.

    PubMed

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-05-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11kg/m(3) of copper and 1.35kg/m(3) of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100-500nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process.

  17. Electronic transitions in the bandgap of copper indium gallium diselenide polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Heath, Jennifer Theresa

    The electronic properties of polycrystalline copper indium gallium diselenide thin films have been investigated, with emphasis on understanding the distribution and origin of electronic states in the bandgap. The samples studied were working photovoltaic devices with the structure ZnO/CdS/CuIn1-xGa xSe2/Mo, and photovoltaic efficiencies ranging from 8 to 16%. The CdS layer and the p-type CuIn1-xGa xSe2 film create the n+- p junction at the heart of these devices. The samples were investigated using four techniques based on the electrical response of the junction: admittance spectroscopy, drive level capacitance profiling, transient photocapacitance spectroscopy, and transient photocurrent spectroscopy. From these measurements the free carrier densities, defect densities within the bandgap, spatial uniformity, and minority carrier mobilities have been deduced. The sub-bandgap response from the CuIn1-xGaxSe2 film was dominated by two defects. One exhibited a thermal transition to the valence band with an activation energy ranging between 0.1 and 0.3 eV and thermal emission prefactors obeying the Meyer-Neldel rule. The second was detected as an optical transition 0.8 eV from the valence band edge. Neither of these defects exhibited densities that varied systematically with gallium content, implying that they are not directly connected with the group III elements in these alloys. The defect densities also do not clearly correlate with the photovoltaic device performance; however, the position of the 0.8 eV defect lies nearer to mid-gap in the higher gallium, and hence higher band gap, material. This implies that it may be a more important recombination center in these devices and may be partially responsible for the reduced photovoltaic efficiencies observed when Ga/(In + Ga) > 0.4. An additional defect response was observed near mid-gap in films grown by processes known to produce lower quality devices. The influence of defects located at grain boundaries was also

  18. Metastability of copper indium gallium diselenide polycrystalline thin film solar cell devices

    NASA Astrophysics Data System (ADS)

    Lee, Jinwoo

    High efficiency thin film solar cells have the potential for being a world energy solution because of their cost-effectiveness. Looking to the future of solar energy, there is the opportunity and challenge for thin film solar cells. The main theme of this research is to develop a detailed understanding of electronically active defect states and their role in limiting device performance in copper indium gallium diselenide (CIGS) solar cells. Metastability in the CIGS is a good tool to manipulate electronic defect density and thus identify its effect on the device performance. Especially, this approach keeps many device parameters constant, including the chemical composition, grain size, and interface layers. Understanding metastability is likely to lead to the improvement of CIGS solar cells. We observed systematic changes in CIGS device properties as a result of the metastable changes, such as increases in sub-bandgap defect densities and decreases in hole carrier mobilities. Metastable changes were characterized using high frequency admittance spectroscopy, drive-level capacitance profiling (DLCP), and current-voltage measurements. We found two distinctive capacitance steps in the high frequency admittance spectra that correspond to (1) the thermal activation of hole carriers into/out of acceptor defect and (2) a temperature-independent dielectric relaxation freeze-out process and an equivalent circuit analysis was employed to deduce the dielectric relaxation time. Finally, hole carrier mobility was deduced once hole carrier density was determined by DLCP method. We found that metastable defect creation in CIGS films can be made either by light-soaking or with forward bias current injection. The deep acceptor density and the hole carrier density were observed to increase in a 1:1 ratio, which seems to be consistent with the theoretical model of VCu-V Se defect complex suggested by Lany and Zunger. Metastable defect creation kinetics follows a sub-linear power law

  19. Chemical vapor deposited copper indium diselenide thin film materials research. Final report, 15 November 1982-14 January 1984

    SciTech Connect

    Not Available

    1984-03-01

    The objective of the contract is to demonstrate the feasibility of producing device-quality copper indium diselenide films by the close-spacing chemical vapor transport (CSCVT) technique. The technical approaches used in this work consist of (1) the preparation of the CuInSe/sub 2/ source material by direct synthesis and the characterization of its properties, (2) the deposition of CuInSe/sub 2/ films on conducting and insulating substrates by the CSCVT technique, and (3) the formation and characterization of heterojunction solar cells. During the course of this subcontract, a number of copper indium selenide ingots (source material) have been synthesized from the elements, and their structural and electrical properties characterized. The deposition of p-type CuInSe/sub 2/ films on graphite, alumina, and coated graphite substrates by the CSCVT technique using iodine and hydrogen iodide as the transport agent has been carried out under a wide range of conditions. The compositional, structural, and electrical properties of CuInSe/sub 2/ films have been characterized. A number of n-ZnO/p-CuInSe/sub 2/ and n-CdO/p-CuInSe/sub 2/ heterojunction solar cells have been prepared by the deposition of the transparent oxide on p-CuInSe/sub 2/ films by ion-beam sputtering. The AM1 efficiency of these cells is in the range of 2% to 3%.

  20. Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells.

    PubMed

    Brun, Nadja Rebecca; Wehrli, Bernhard; Fent, Karl

    2016-02-01

    Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L(-1) molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L(-1). From OPV, copper (14 μg L(-1)), zinc (87 μg L(-1)) and silver (78 μg L(-1)) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk. PMID:26615488

  1. Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells.

    PubMed

    Brun, Nadja Rebecca; Wehrli, Bernhard; Fent, Karl

    2016-02-01

    Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L(-1) molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L(-1). From OPV, copper (14 μg L(-1)), zinc (87 μg L(-1)) and silver (78 μg L(-1)) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk.

  2. Commercial and industrial applications of indium gallium arsenide near-infrared focal plane arrays

    NASA Astrophysics Data System (ADS)

    Cohen, Marshall J.; Ettenberg, Martin H.; Lange, Michael J.; Olsen, Gregory H.

    1999-07-01

    Sensors Unlimited, Inc. has developed focal pane arrays (FPAs) fabricated with indium gallium arsenide (InGaAs) photodiode arrays and silicon CMOS readout integrated circuits. These devices are readily available in a wide variety of formats suitable for commercial and industrial applications. InGaAs FPAs are sensitive to the near IR, operate without cooling, and come in both 2D formats and 1D formats. 1D InGaAs FPAs are used as both spectroscopic detectors and line scan imagers. Key applications include miniature spectrometers used for wavelength control and monitoring of WDM laser sources, octane determination, the sorting o plastics during recycling, and web process control. 2D InGaAs FPAs find use in applications such as laser beam profiling, visualization of 'clear' ice on aircraft and roadways, and industrial thermal imaging.

  3. One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells.

    PubMed

    Harati, Mohammad; Jia, Jia; Giffard, Kévin; Pellarin, Kyle; Hewson, Carly; Love, David A; Lau, Woon Ming; Ding, Zhifeng

    2010-12-14

    Herein we report the one-pot electrodeposition of copper indium gallium diselenide, CuIn(1-x)Ga(x)Se(2) (CIGS), thin films as the p-type semiconductor in an ionic liquid medium consisting of choline chloride/urea eutectic mixture known as Reline. The thin films were characterized by scanning electron microscopy with energy dispersive X-ray analysis, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman microspectroscopy, and UV-visible spectroscopy. Based on the results of the characterizations, the electrochemical bath recipe was optimized to obtain stoichiometric CIGS films with x between 0.2 and 0.4. The chemical activity and photoreactivity of the optimized CIGS films were found to be uniform using scanning electrochemical microscopy and scanning photoelectrochemical microscopy. Low-cost stoichiometric CIGS thin films in one-pot were successfully fabricated. PMID:20835485

  4. Fabrication and characterization of copper oxide (CuO)–gold (Au)–titania (TiO{sub 2}) and copper oxide (CuO)–gold (Au)–indium tin oxide (ITO) nanowire heterostructures

    SciTech Connect

    Chopra, Nitin; Shi, Wenwu; Lattner, Andrew

    2014-10-15

    Nanoscale heterostructures composed of standing copper oxide nanowires decorated with Au nanoparticles and shells of titania and indium tin oxide were fabricated. The fabrication process involved surfactant-free and wet-chemical nucleation of gold nanoparticles on copper oxide nanowires followed by a line-of-sight sputtering of titania or indium tin oxide. The heterostructures were characterized using high resolution electron microscopy, diffraction, and energy dispersive spectroscopy. The interfaces, morphologies, crystallinity, phases, and chemical compositions were analyzed. The process of direct nucleation of gold nanoparticles on copper oxide nanoparticles resulted in low energy interface with aligned lattice for both the components. Coatings of polycrystalline titania or amorphous indium tin oxide were deposited on standing copper oxide nanowire–gold nanoparticle heterostructures. Self-shadowing effect due to standing nanowire heterostructures was observed for line-of-sight sputter deposition of titania or indium tin oxide coatings. Finally, the heterostructures were studied using Raman spectroscopy and ultraviolet–visible spectroscopy, including band gap energy analysis. Tailing in the band gap energy at longer wavelengths (or lower energies) was observed for the nanowire heterostructures. - Highlights: • Heterostructures comprised of CuO nanowires coated with Au nanoparticles. • Au nanoparticles exhibited nearly flat and low energy interface with nanowire. • Heterostructures were further sputter-coated with oxide shell of TiO{sub 2} or ITO. • The process resulted in coating of polycrystalline TiO{sub 2} and amorphous ITO shell.

  5. Metals fact sheet - indium

    SciTech Connect

    1994-01-01

    Indium is generally found in concentrations averaging 10 to 20 ppm in sphalerite and chalcopyrite ores associated with zinc, copper, lead and tin deposits. Indium is recovered as a by-product of base metal mining by open pit, underground and other methods. After the recovery of zinc by the electrolytic process (copper concentrate by flotation, and lead and tin by electrolysis), indium antimonide slimes left on the anode and the indium-containing spent electrolyte become the input material for the processing of indium. Sulfuric acid is combined with the residues and heated to form sulfates which are then leached with water to filter off the remaining tin, lead and antimony. The indium in solution is recovered by cementation on aluminum, washed, melted, and refined into a metal.

  6. Auger electron spectroscopy study of surface segregation in the binary alloys copper-1 atomic percent indium, copper-2 atomic percent tin, and iron-6.55 atomic percent silicon

    NASA Technical Reports Server (NTRS)

    Ferrante, J.

    1973-01-01

    Auger electron spectroscopy was used to examine surface segregation in the binary alloys copper-1 at. % indium, copper-2 at. % tin and iron-6.55 at. % silicon. The copper-tin and copper-indium alloys were single crystals oriented with the /111/ direction normal to the surface. An iron-6.5 at. % silicon alloy was studied (a single crystal oriented in the /100/ direction for study of a (100) surface). It was found that surface segregation occurred following sputtering in all cases. Only the iron-silicon single crystal alloy exhibited equilibrium segregation (i.e., reversibility of surface concentration with temperature) for which at present we have no explanation. McLean's analysis for equilibrium segregation at grain boundaries did not apply to the present results, despite the successful application to dilute copper-aluminum alloys. The relation of solute atomic size and solubility to surface segregation is discussed. Estimates of the depth of segregation in the copper-tin alloy indicate that it is of the order of a monolayer surface film.

  7. Electrical Bias as an Alternate Method for Reproducible Measurement of Copper Indium Gallium Diselenide (CIGS) Photovoltaic Modules: Preprint

    SciTech Connect

    Deline, C.; Stokes, A.; Silverman, T. J.; Rummel, S.; Jordan, D.; Kurtz, S.

    2012-08-01

    Light-to-dark metastable changes in thin-film photovoltaic (PV) modules can introduce uncertainty when measuring module performance on indoor flash testing equipment. This study describes a method to stabilize module performance through forward-bias current injection rather than light exposure. Measurements of five pairs of thin-film copper indium gallium diselenide (CIGS) PV modules indicate that forward-bias exposure maintained the PV modules at a stable condition (within 1%) while the unbiased modules degraded in performance by up to 12%. It was additionally found that modules exposed to forward bias exhibited stable performance within about 3% of their long-term outdoor exposed performance. This carrier-injection method provides a way to reduce uncertainty arising from fast transients in thin-film module performance between the time a module is removed from light exposure and when it is measured indoors, effectively simulating continuous light exposure by injecting minority carriers that behave much as photocarriers do. This investigation also provides insight into the initial light-induced transients of thin-film modules upon outdoor deployment.

  8. Observation of a Spot Diameter Dependency in Confined Laser Ablation of Zinc Oxide on Copper-Indium-Diselenide

    NASA Astrophysics Data System (ADS)

    Moser, Regina; Seiler, Daniel; Huber, Heinz P.; Marowsky, Gerd

    Confined laser ablation with ultra-short laser pulses, also referred to as laser "lift-off", is initiated at the interface of transparent thin films and underlying absorbing substrates. The energy per ablated volume at confined laser ablation (<10J/mm3) is higher than at direct laser ablation (about 100 J/mm3). In this paper the selective laser structuring of a zinc oxide (ZnO) / copper-indium-diselenid (CIS) layer system is investigated with 10 ps and 460 fs long laser pulses. Spot diameters between 14 μm and 100 μm were selected to show the relation between the spot diameter and the so called punching fluence. This value describes the lowest fluence at which the laser "lift-off" takes place. For both pulse durations the punching fluence depends on the spot diameter. The punching fluence increases from about 0.4 J/cm2 at spot diameters ≥40 μm to about 1.1 J/cm2 for decreasing spot diameters <40 μm.

  9. Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization

    SciTech Connect

    Nian, Qiong; Cheng, Gary J.; Zhang, Martin Y.; Wang, Yuefeng; Das, Suprem R.; Bhat, Venkataprasad S.; Huang, Fuqiang

    2014-09-15

    There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducing scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.

  10. Colloidally stable selenium@copper selenide core@shell nanoparticles as selenium source for manufacturing of copper-indium-selenide solar cells.

    PubMed

    Dong, Hailong; Quintilla, Aina; Cemernjak, Marco; Popescu, Radian; Gerthsen, Dagmar; Ahlswede, Erik; Feldmann, Claus

    2014-02-01

    Selenium nanoparticles with diameters of 100-400nm are prepared via hydrazine-driven reduction of selenious acid. The as-prepared amorphous, red selenium (a-Se) particles were neither a stable phase nor were they colloidally stable. Due to phase transition to crystalline (trigonal), grey selenium (t-Se) at or even below room temperature, the particles merged rapidly and recrystallized as micronsized crystal needles. As a consequence, such Se particles were not suited for layer deposition and as a precursor to manufacture thin-film CIS (copper indium selenide/CuInSe2) solar cells. To overcome this restriction, Se@CuSe core@shell particles are presented here. For these Se@CuSe core@shell nanoparticles, the phase transition a-Se→t-Se is shifted to temperatures higher than 100°C. Moreover, a spherical shape of the particles is retained even after phase transition. Composition and structure of the Se@CuSe core@shell nanostructure are evidenced by electron microscopy (SEM/STEM), DLS, XRD, FT-IR and line-scan EDXS. As a conceptual study, the newly formed Se@CuSe core@shell nanostructures with CuSe acting as a protecting layer to increase the phase-transition temperature and to improve the colloidal stability were used as a selenium precursor for manufacturing of thin-film CIS solar cells and already lead to conversion efficiencies up to 3%.

  11. Colloidally stable selenium@copper selenide core@shell nanoparticles as selenium source for manufacturing of copper-indium-selenide solar cells.

    PubMed

    Dong, Hailong; Quintilla, Aina; Cemernjak, Marco; Popescu, Radian; Gerthsen, Dagmar; Ahlswede, Erik; Feldmann, Claus

    2014-02-01

    Selenium nanoparticles with diameters of 100-400nm are prepared via hydrazine-driven reduction of selenious acid. The as-prepared amorphous, red selenium (a-Se) particles were neither a stable phase nor were they colloidally stable. Due to phase transition to crystalline (trigonal), grey selenium (t-Se) at or even below room temperature, the particles merged rapidly and recrystallized as micronsized crystal needles. As a consequence, such Se particles were not suited for layer deposition and as a precursor to manufacture thin-film CIS (copper indium selenide/CuInSe2) solar cells. To overcome this restriction, Se@CuSe core@shell particles are presented here. For these Se@CuSe core@shell nanoparticles, the phase transition a-Se→t-Se is shifted to temperatures higher than 100°C. Moreover, a spherical shape of the particles is retained even after phase transition. Composition and structure of the Se@CuSe core@shell nanostructure are evidenced by electron microscopy (SEM/STEM), DLS, XRD, FT-IR and line-scan EDXS. As a conceptual study, the newly formed Se@CuSe core@shell nanostructures with CuSe acting as a protecting layer to increase the phase-transition temperature and to improve the colloidal stability were used as a selenium precursor for manufacturing of thin-film CIS solar cells and already lead to conversion efficiencies up to 3%. PMID:24267336

  12. Indium oxide (In2O3) nanoparticles induce progressive lung injury distinct from lung injuries by copper oxide (CuO) and nickel oxide (NiO) nanoparticles.

    PubMed

    Jeong, Jiyoung; Kim, Jeongeun; Seok, Seung Hyeok; Cho, Wan-Seob

    2016-04-01

    Indium is an essential element in the manufacture of liquid crystal displays and other electronic devices, and several forms of indium compounds have been developed, including nanopowders, films, nanowires, and indium metal complexes. Although there are several reports on lung injury caused by indium-containing compounds, the toxicity of nanoscale indium oxide (In2O3) particles has not been reported. Here, we compared lung injury induced by a single exposure to In2O3 nanoparticles (NPs) to that caused by benchmark high-toxicity nickel oxide (NiO) and copper oxide (CuO) NPs. In2O3 NPs at doses of 7.5, 30, and 90 cm(2)/rat (50, 200, and 600 µg/rat) were administered to 6-week-old female Wistar rats via pharyngeal aspiration, and lung inflammation was evaluated 1, 3, 14, and 28 days after treatment. Neutrophilic inflammation was observed on day 1 and worsened until day 28, and severe pulmonary alveolar proteinosis (PAP) was observed on post-aspiration days 14 and 28. In contrast, pharyngeal aspiration of NiO NPs showed severe neutrophilic inflammation on day 1 and lymphocytic inflammation with PAP on day 28. Pharyngeal aspiration of CuO NPs showed severe neutrophilic inflammation on day 1, but symptoms were completely resolved after 14 days and no PAP was observed. The dose of In2O3 NPs that produced progressive neutrophilic inflammation and PAP was much less than the doses of other toxic particles that produced this effect, including crystalline silica and NiO NPs. These results suggest that occupational exposure to In2O3 NPs can cause severe lung injury.

  13. Copper-indium ordering in RECu 6In 6 ( RE=Y, Ce, Pr, Nd, Gd, Tb, Dy)

    NASA Astrophysics Data System (ADS)

    Zaremba, Roman; Muts, Ihor; Hoffmann, Rolf-Dieter; Kalychak, Yaroslav M.; Zaremba, Vasyl' I.; Pöttgen, Rainer

    2007-09-01

    The rare earth metal-copper-indides RECu 6In 6 ( RE=Y, Ce, Pr, Nd, Gd, Tb, Dy) were synthesized from the elements by arc-melting. Well-crystallized samples were obtained by slowly cooling the melted buttons from 1320 to 670 K in sealed silica tubes in a muffle furnace. They were investigated by X-ray diffraction on powders and single crystals: ThMn 12 type, space group I4/ mmm, Z=2, a=916.3(2), c=535.8(2) pm, w R2=0.063, 216 F2 values, 15 variables for YCu 6In 6, a=926.5(4), c=543.5(3) pm, w R2=0.064, 314 F2 values, 15 variables for CeCu 6In 6, a=925.7(4), c=540.1(3) pm, w R2=0.075, 219 F2 values, 15 variables for PrCu 6In 6, a=923.1(4), c=540.3(3) pm, w R2=0.071, 218 F2 values, 15 variables for NdCu 6In 6, a=917.7(4), c=540.2(3) pm, w R2=0.076, 207 F2 values, 15 variables for GdCu 6In 6, a=917.0(5), c=540.5(4) pm, w R2=0.062, 215 F2 values, 15 variables for TbCu 6In 6, a=915.2(8), c=540.7(7) pm, w R2=0.108, 218 F2 values, 15 variables for DyCu 6In 6. The structures have been refined with a split position (50% Cu+50% In) for the 8 j site. They can be explained by a tetragonal body-centered packing of CN 20 polyhedra (10Cu+10In) around the rare earth atoms. The ordering models of the copper and indium atoms and the limitations/resolution of X-ray diffraction for this topic are discussed.

  14. Thin film metallic glass as a diffusion barrier for copper indium gallium selenide solar cell on stainless steel substrate: A feasibility study

    NASA Astrophysics Data System (ADS)

    Diyatmika, Wahyu; Xue, Lingjun; Lin, Tai-Nan; Chang, Chia-wen; Chu, Jinn P.

    2016-08-01

    The feasibility of using Zr53.5Cu29.1Al6.5Ni10.9 thin-film metallic glass (TFMG) as a diffusion barrier for copper indium gallium selenide (CIGS) solar cells on stainless steel (SS) is investigated. The detrimental Fe diffusion from SS into CIGS is found to be effectively hindered by the introduction of a 70-nm-thick TFMG barrier; the cell performance is thus improved. Compared with the 2.73% of CIGS on bare SS, a higher efficiency of 5.25% is obtained for the cell with the Zr52Cu32Al9Ni7 TFMG barrier.

  15. Copper:molybdenum sub-oxide blend as transparent conductive electrode (TCE) indium free

    NASA Astrophysics Data System (ADS)

    Hssein, Mehdi; Cattin, Linda; Morsli, Mustapha; Addou, Mohammed; Bernède, Jean-Christian

    2016-05-01

    Oxide/metal/oxide structures have been shown to be promising alternatives to ITO. In such structures, in order to decrease the high light reflection of the metal film it is embedded between two metal oxides dielectric. MoO3-x is often used as oxide due to its capacity to be a performing anode buffer layer in organic solar cells, while silver is the metal the most often used [1]. Some attempts to use cheaper metal such as copper have been done. However it was shown that Cu diffuses strongly into MoO3-x [2]. Here we used this property to grow simple new transparent conductive oxide (TCE), i.e., Cu: MoO3-x blend. After the deposition of a thin Cu layer, a film of MoO3-x is deposited by sublimation. An XPS study shows more than 50% of Cu is present at the surface of the structure. In order to limit the Cu diffusion an ultra-thin Al layer is deposited onto MoO3-x. Then, in order to obtain a good hole collecting contact with the electron donor of the organic solar cells, a second MoO3-x layer is deposited. After optimization of the thickness of the different layers, the optimum structure is as follow: Cu (12 nm) : MoO3-x (20 nm)/Al (0.5 nm)/ MoO3-x (10 nm). The sheet resistance of this structure is Rsq = 5.2 Ω/sq. and its transmittance is Tmax = 65%. The factor of merit ϕM = T10/Rsq. = 2.41 × 10-3 Ω-1, which made this new TCE promising as anode in organic solar cells. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  16. Fabrication of microstructured copper on an indium-tin-oxide surface using a micropatterned self-assembled monolayer as a template

    NASA Astrophysics Data System (ADS)

    Asakura, Shuuichi; Hirota, Mitsuhito; Fuwa, Akio

    2003-07-01

    The difference in chemical reactivity between indium-tin-oxide (ITO) and self-assembled monolayer (SAM) surfaces was used to fabricate copper (Cu) microstructures. ITO substrates coated with octadecyltrimethoxysilane (ODS)-SAM were photolithographically micropatterned using vacuum ultraviolet (VUV) light. Each of the micropatterned samples was subsequently immersed in an electrodeposition bath in order to deposit Cu on its surface. As confirmed by atomic force microscopy, Cu electrodeposition proceeded selectively on the VUV-irradiated areas of the ITO surface while the ODS-SAM surface served effectively as a mask to block Cu deposition. Cu microstructures with 7.5 × 7.5 μm2 features were successfully fabricated on the ITO surface.

  17. Indium Sorption to Iron Oxides

    NASA Astrophysics Data System (ADS)

    White, S. J.; Sacco, S. A.; Hemond, H.; Hussain, F. A.; Runkel, R. L.; Walton-Day, K. E.; Kimball, B. A.; Shine, J. P.

    2014-12-01

    Indium is an increasingly important metal in semiconductors and electronics, and its use is growing rapidly as a semiconductive coating (as indium tin oxide) for liquid crystal displays (LCDs) and flat panel displays. It also has uses in important energy technologies such as light emitting diodes (LEDs) and photovoltaic cells. Despite its rapid increase in use, very little is known about the environmental behavior of indium, and concerns are being raised over the potential health effects of this emerging metal contaminant. One source of indium to the environment is acid mine drainage from the mining of lead, zinc, and copper sulfides. In our previous studies of a stream in Colorado influenced by acid mine drainage from lead and zinc mining activities, indium concentrations were found to be 10,000 times those found in uncontaminated rivers. However, the speciation and mobility of indium could not be reliably modeled because sorption constants to environmental sorbents have not been determined. In this study, we generate sorption constants for indium to ferrihydrite in the laboratory over a range of pHs, sorbent to sorbate ratios, and ionic strengths. Ferrihydrite is one of the most important sorbents in natural systems, and sorption to amorphous iron oxides such as ferrihydrite is thought to be one of the main removal mechanisms of metals from the dissolved phase in aqueous environments. Because of its relatively low solubility, we also find that indium hydroxide precipitation can dominate indium's partitioning at micromolar concentrations of indium. This precipitation may be important in describing indium's behavior in our study stream in Colorado, where modeling sorption to iron-oxides does not explain the complete removal of indium from the dissolved phase when the pH of the system is artificially raised to above 8. This study contributes much-needed data about indium's aqueous behavior, in order to better understand its fate, transport, and impacts in the

  18. Surface potential measurement of fullerene derivative/copper phthalocyanine on indium tin oxide electrode by Kelvin probe force microscopy

    NASA Astrophysics Data System (ADS)

    Satoh, Nobuo; Yamaki, Michio; Noda, Kei; Katori, Shigetaka; Kobayashi, Kei; Matsushige, Kazumi; Yamada, Hirofumi

    2015-08-01

    We have investigated the organic semiconductor thin films deposited by vacuum evaporation deposition using intersecting metal shadow masks on indium tin oxide (ITO) electrode/glass substrates to simulate organic solar cells by simultaneous observation with dynamic force microscopy (DFM)/Kelvin-probe force microscopy (KFM). The energy band diagram was depicted by simultaneously obtaining topographic and surface potential images of the same area using DFM/KFM. We considered the charge behavior at the interface having band bending in the phenyl-C61-butyric acid methyl ester (PCBM) film.

  19. MENTAL MORBIDITY IN INDUSTRIAL WORKERS OF KHETRI COPPER COMPLEX1

    PubMed Central

    Satija, D.C.; Patni, S.K.; Nathawat, S.S.

    1984-01-01

    SUMMARY There is dearth of researches pertaining to prevalence of mental morbidity in Industrial setups, particularly in our country. They are important as psychological ill health of workers may adversely effect the productivity in developing country like India. Khetri Copper Complex in Rajasthan was selected for present study. Aims were to determine the period prevalence of mental morbidity among workers and role of sociodemographic, psychological variables in such disorders. 330 workers were randomly selected from various departments. Each worker was given specially designed proforma and Goldberg's General Health Questionnaire. Workers scoring 12 or more were given “A standardised psychiatric interview schedule” suspected cases were examined by senior consultants to assign them diagnostic categories (I.C.D.-9). Period Prevalence in this study was 186.66/1000. As regards diagnostic categories, 75% were neurotic and 12.5% psychotics. Role of socio demographic, psychological and psychiatric variables in the development of these disorders has been discussed. Findings of this study are in expected direction and results obtained can be easily explained in terms of formulations given by other researchers in this field. Recommendation and plans for further research are discussed. PMID:21965974

  20. High color rendering index white light emitting diodes fabricated from a combination of carbon dots and zinc copper indium sulfide quantum dots

    NASA Astrophysics Data System (ADS)

    Sun, Chun; Zhang, Yu; Wang, Yu; Liu, Wenyan; Kalytchuk, Sergii; Kershaw, Stephen V.; Zhang, Tieqiang; Zhang, Xiaoyu; Zhao, Jun; Yu, William W.; Rogach, Andrey L.

    2014-06-01

    In a line with most recent trends in developing non-toxic fluorescent nanomaterials, we combined blue emissive carbon dots with green and red emissive zinc copper indium sulfide (ZCIS) core/shell quantum dots (QDs) to achieve white light-emitting diodes (WLEDs) with a high color rendering index of 93. This indicates that ZCIS QDs, with their broad emission bands, can be employed to effectively make up the emission of carbon dots in the yellow and red regions to produce WLEDs in the wide region of color temperature by tuning the volume ratio of these constituting luminophores. Their electroluminescence characteristics including color rendering index, Commission Internationale de l'Eclairage (CIE) color coordinates, and color temperatures were evaluated as a function of forward current. The CIE-1931 chromaticity coordinates of the as-prepared WLEDs, exhibiting good stability, were slightly shifted from (0.321, 0.312) at 10 mA to (0.351, 0.322) at 30 mA, which was mainly caused by the different thermal quenching coefficients of carbon dots and ZCIS QDs.

  1. High color rendering index white light emitting diodes fabricated from a combination of carbon dots and zinc copper indium sulfide quantum dots

    SciTech Connect

    Sun, Chun; Liu, Wenyan; Zhang, Xiaoyu; Zhang, Yu E-mail: wyu6000@gmail.com; Wang, Yu; Kalytchuk, Sergii; Kershaw, Stephen V.; Rogach, Andrey L.; Zhang, Tieqiang; Zhao, Jun; Yu, William W. E-mail: wyu6000@gmail.com

    2014-06-30

    In a line with most recent trends in developing non-toxic fluorescent nanomaterials, we combined blue emissive carbon dots with green and red emissive zinc copper indium sulfide (ZCIS) core/shell quantum dots (QDs) to achieve white light-emitting diodes (WLEDs) with a high color rendering index of 93. This indicates that ZCIS QDs, with their broad emission bands, can be employed to effectively make up the emission of carbon dots in the yellow and red regions to produce WLEDs in the wide region of color temperature by tuning the volume ratio of these constituting luminophores. Their electroluminescence characteristics including color rendering index, Commission Internationale de l'Eclairage (CIE) color coordinates, and color temperatures were evaluated as a function of forward current. The CIE-1931 chromaticity coordinates of the as-prepared WLEDs, exhibiting good stability, were slightly shifted from (0.321, 0.312) at 10 mA to (0.351, 0.322) at 30 mA, which was mainly caused by the different thermal quenching coefficients of carbon dots and ZCIS QDs.

  2. Current Energy Requirements in the Copper Producing Industries

    NASA Astrophysics Data System (ADS)

    Pitt, Charles H.; Wadsworth, Milton E.

    1981-06-01

    An analysis of energy usage in the production of refined cathode copper was made from mining ore to cathode copper. In mining copper ore the greatest energy consumers are ore hauling and blasting. Another important factor is the "recovery efficiency" of the metallurgical processes used to extract the copper. The mining and mineral concentrating energies are directly proportional to the "recovery efficiency," with a typical mining operation requiring about 20 million Btu/ton of cathode copper produced. Mineral concentrating was also found to be a large energy consumer, requiring about 43 million Btu/ton of cathode copper. Some possibilities for energy savings in the mineral processing area include use of autogenous grinding and computer control for optimizing grinding operations, improved classifier efficiency, and optimizing the entire concentrator plant performance by interrelating all plant operations. In acid plants, optimization of input SO2 concentration can make the plant a net producer rather than a net user of energy. The conventional smelting process utilizes very little of the energy from the combustion of sulfides in the charge. Several of the newer copper pyrometallurgical processes which utilize more of the combustion energy of the sulfides as heat show a significant improvement over conventional smelting. Generally, increased use of oxygen decreases Level 1 energies but proportionately increases Level 2 energies. Hydrometallurgical processes are, in general, more energy intensive than smelting processes, mainly because of the inability to utilize the heat of reaction of the sulfides. Electrowinning used in most hydrometallurgy processes is also energy intensive, and research in these areas could produce significant energy savings. Combination pyrometallurgical processes are generally less energy intensive than entirely hydrometallurgical processes. Significant improvements may be made in energy use in hydrometallurgical processes by more effective

  3. An econometric model of the U.S. secondary copper industry: Recycling versus disposal

    USGS Publications Warehouse

    Slade, M.E.

    1980-01-01

    In this paper, a theoretical model of secondary recovery is developed that integrates microeconomic theories of production and cost with a dynamic model of scrap generation and accumulation. The model equations are estimated for the U.S. secondary copper industry and used to assess the impacts that various policies and future events have on copper recycling rates. The alternatives considered are: subsidies for secondary production, differing energy costs, and varying ore quality in primary production. ?? 1990.

  4. Observation of compositional domains within individual copper indium sulfide quantum dots† †Electronic supplementary information (ESI) available. See DOI: 10.1039/C6NR03269A Click here for additional data file.

    PubMed Central

    Harvie, Andrew J.; Booth, Matthew; Chantry, Ruth L.; Hondow, Nicole; Kepaptsoglou, Demie M.; Ramasse, Quentin M.; Evans, Stephen D.

    2016-01-01

    The origin of photoluminescence in copper indium sulfide (CIS) quantum dots (Qdots) has previously been ascribed to a donor–acceptor pair (DAP) recombination, with a crystal lattice defect implicated as the origin of the donor state. In this study, electron energy-loss spectroscopy (EELS) was used to observe defect-rich compositional domains within individual CIS Qdots, supporting a model of defect-state-mediated photoluminescence for these particles, and identifying them as an ideal model system for future study of lattice defects on Qdot properties. PMID:27465708

  5. [On industrial conditionality of diseases among copper melting enterprise workers].

    PubMed

    Budkar, L N; Kudrina, K S; Karpova, E A; Obukhova, T Yu; Shmonina, O G; Kashanskaya, E P

    2016-01-01

    Health state of workers in hazardous conditions of copper melting enterprise depends on wide spectrum of somatic occupationally conditioned diseases. Economic damage from workers' health disorders due only to cardiovascular diseases can be considerable. To reduce this damage, hygienic measures are necessary to improve work conditions, to preserve occupational fitness of the workers, other measures to diminish controllable factors of vascular risk and to prevent occupationally conditioned cardiovascular diseases.

  6. Removal of copper from industrial sludge by traditional and microwave acid extraction.

    PubMed

    Kuo, Chao-Yin; Wu, Chung-Hsin; Lo, Shang-Lien

    2005-04-11

    This work elucidates the removal of copper from industrial sludge by traditional and microwave acid extraction. The effects of acid concentration, extraction time, sludge particle size and solid/liquid (S/L) ratio on copper removal efficiency were evaluated. Leaching with more concentrated acid yielded greater copper content from the industrial sludge. The experimental findings reveal that the most economical traditional extraction conditions were the use of 1N sulfuric or nitric acid for 60 min at an S/L ratio of 1/20; however, at an S/L ratio of 1/6, the extraction time needed to achieve the same copper removal efficiency was increased to 36 h. Increasing the microwave power and reducing the S/L ratio increased the copper extraction efficiency and the effect in the larger S/L ratio system was more significant. A comparison of the results of microwave-assisted (microwave only) and microwave-enhanced (microwave with addition of active carbon) acid extraction demonstrated that under both conditions, S/L ratio=1/6 and 1/20; adding active carbon shortened the extraction time required to achieve 80% copper extraction efficiency from 20 to 10 min. These experimental results indicate that the most important factors that most strongly affected microwave acid extraction were the addition of a microwave absorber, the microwave power input and the S/L ratio. The sludge particle size did not significantly affect the copper extraction. The results reveal that sulfuric acid was an effective extractant and that the copper fraction in the extracted sludge shifted from being mostly bound to the Fe-Mn oxides and organic matter, to being mostly bound to organic matter and remaining as a residue during acid extraction.

  7. Indium: bringing liquid-crystal displays into focus

    USGS Publications Warehouse

    Mercer, Celestine N.

    2015-01-01

    Compared to more abundant industrial metals such as lead and zinc, information about the behavior and toxicity of indium in the environment is limited. However, many indium compounds have been proven to be toxic to animals.

  8. Indium: bringing liquid-crystal displays into focus

    USGS Publications Warehouse

    Mercer, Celestine N.

    2015-07-30

    Compared to more abundant industrial metals such as lead and zinc, information about the behavior and toxicity of indium in the environment is limited. However, many indium compounds have been proven to be toxic to animals.

  9. Exploring the life cycle management of industrial solid waste in the case of copper slag.

    PubMed

    Song, Xiaolong; Yang, Jianxin; Lu, Bin; Li, Bo

    2013-06-01

    Industrial solid waste has potential impacts on soil, water and air quality, as well as human health, during its whole life stages. A framework for the life cycle management of industrial solid waste, which integrates the source reduction process, is presented and applied to copper slag management. Three management scenarios of copper slag are developed: (i) production of cement after electric furnace treatment, (ii) production of cement after flotation, and (iii) source reduction before the recycling process. A life cycle assessment is carried out to estimate the environmental burdens of these three scenarios. Life cycle assessment results showed that the environmental burdens of the three scenarios are 2710.09, 2061.19 and 2145.02 Pt respectively. In consideration of the closed-loop recycling process, the environmental performance of the flotation approach excelled that of the electric furnace approach. Additionally, although flash smelting promotes the source reduction of copper slag compared with bath smelting, it did not reduce the overall environmental burdens resulting from the complete copper slag management process. Moreover, it led to the shifting of environmental burdens from ecosystem quality damage and resources depletion to human health damage. The case study shows that it is necessary to integrate the generation process into the whole life cycle of industrial solid waste, and to make an integrated assessment for quantifying the contribution of source reduction, rather than to simply follow the priority of source reduction and the hierarchy of waste management.

  10. Heat treatment effect on the mechanical properties of industrial drawn copper wires

    SciTech Connect

    Beribeche, Abdellatif Boumerzoug, Zakaria; Ji, Vincent

    2013-12-16

    In this present investigation, the mechanical properties of industrial drawn copper wires have been studied by tensile tests. The effect of prior heat treatments at 500°C on the drawn wires behavior was the main goal of this investigation. We have found that the mechanical behavior of drawn wires depends strongly on those treatments. SEM observations of the wire cross section after tensile tests have shown that the mechanism of rupture was mainly controlled by the void formation.

  11. The Availability of Indium: The Present, Medium Term, and Long Term

    SciTech Connect

    Lokanc, Martin; Eggert, Roderick; Redlinger, Michael

    2015-10-01

    Demand for indium is likely to increase if the growth in deployment of the copper-indium-gallium-selenide (CIGS) and III-V thin-film photovoltaic technologies accelerates. There are concerns about indium supply constraints since it is relatively rare element in the earth's crust and because it is produced exclusively as a byproduct.

  12. Investigation of the Freeze-Lining Formed in an Industrial Copper Converting Calcium Ferrite Slag

    NASA Astrophysics Data System (ADS)

    Fallah-Mehrjardi, Ata; Jansson, Jani; Taskinen, Pekka; Hayes, Peter C.; Jak, Evgueni

    2014-06-01

    Pyrometallurgical coppermaking processes are operated under intensive reaction conditions; high process temperatures and vigorous bath agitation is used to increase the kinetics of reactions and to achieve high smelter throughput. Slag freeze-lining reactor wall protection is a widely used technology in coppermaking processes, such as flash smelting and converting reactors. Freeze-linings mitigate and resist the effects of thermal and chemical attack by aggressive slags. In this laboratory-based study, a water-cooled probe "cold finger" technique has been used to investigate freeze-lining formation with calcium ferrite slags in equilibrium with metallic copper; the slag composition reflects that used in the industrial copper flash converting furnace of Rio Tinto—Kennecott Utah Copper. The effects of probe immersion times on the thickness and microstructures in the freeze-lining deposits have been investigated. A range of complex oxide solutions and copper-containing phases have been found in the deposits. The phase assemblages formed from the industrial calcium ferrite slag in the steady-state deposit are very complex and information on the phase equilibria of the multi-component systems with addition of minor elements may not be available. Subsolidus and subliquidus phase equilibria in the Cu-Ca-Fe-O system at metallic copper saturation along with interpolated temperature across the deposit, microstructural changes and compositional trends in the phases in the deposit have been used to understand the formation and characteristics of the phases in the steady-state freeze-lining. Also, it has been shown that under steady-state conditions a dense sealing layer consisting primarily of the spinel primary phase is formed at the deposit/liquid interface; however, the interface temperature is below the liquidus temperature. The findings of the study have potentially important implications for the operation of the converting furnace and the design of freeze linings in

  13. Characteristics of PCDD/F emissions from secondary copper smelting industry.

    PubMed

    Hung, Pao Chen; Chang, Chia Chia; Chang, Shu Hao; Chang, Moo Been

    2015-01-01

    Characteristics and mechanisms of PCDD/F formation with different feed materials in secondary copper smelting industry are investigated. The results indicate that PCDD/Fs are significantly formed even with the reaction time less than 0.1s, especially when the material containing high residues (Cu3) is fed. High copper content (65±2%) in the feed material enhances PCDD/F formation rate. Memory effect and de novo synthesis are two important mechanisms leading to PCDD/F formation. PCDD/F concentrations at the cyclone's inlet are between 2.92 and 12.4ng-TEQNm(-3) and increase with increasing residue content in the feed material. Two regions are identified for high potential of PCDD/F formation including the brass melt surface of the induction furnace and piping before the induced draft fan of the inlet hood. PCDD/Fs in flue gas are effectively removed with a cyclone and bag filter at low operating temperatures (<60°C) to meet the emission limit of 1.0ng-TEQNm(-3). 1,2,3,4,6,7,8-HpCDF has the largest mass fraction of PCDD/Fs and can serve as a fingerprint for emissions from secondary copper smelting processes. The total emission factor of PCDD/Fs from flue gas, residual and fly ash in the secondary copper smelting process investigated is 22.01μg-TEQtonne(-1).

  14. Copper

    Integrated Risk Information System (IRIS)

    Copper ; CASRN 7440 - 50 - 8 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic Effects )

  15. Development of the copper and molybdenum industries and the Armenian economy

    USGS Publications Warehouse

    Bond, A.R.; Levine, R.M.

    1997-01-01

    Production of copper and molybdenum in Armenia is examined, with special emphasis on the location of major deposits, former and proposed future centers of processing, and contribution of metals exports to the country's foreign trade revenues. Particular emphasis is placed on the impacts on these industries of the disruption of economic ties resulting from the dissolution of the USSR and an economic crisis precipitated by a major earthquake, Armenia's tension with Azerbaijan over armed conflict in Nagorno-Karabakh and surrounding areas in Azerbaijan, an economic blockade imposed by Turkey and Azerbaijan, and a consequent severe energy crisis. The paper highlights developments in the mid-1990s in copper and molybdenum and in the recent expansion of trade relations with Iran.

  16. Alumina polymorphs affect the metal immobilization effect when beneficially using copper-bearing industrial sludge for ceramics.

    PubMed

    Tang, Yuanyuan; Lu, Xiuqing; Shih, Kaimin

    2014-12-01

    The feasibility of recycling copper-bearing industrial sludge as a part of ceramic raw materials was evaluated through thermal interaction of sludge with aluminum-rich precursors. To observe copper incorporation mechanism, mixtures of copper-bearing sludge with alumina polymorphs (γ-Al2O3 and α-Al2O3) were fired between 750 and 1250°C. Different copper-hosting phases were identified by X-ray diffraction, and CuAl2O4 was found to be the predominant phase throughout the reactions. The experimental results indicate different CuAl2O4 initiating temperatures for two alumina materials, and the optimal temperature for CuAl2O4 formation is around 1100°C. To monitor the stabilization effect, prolonged leaching tests were carried out to leach sintered products for up to 20d. The results clearly demonstrate a substantial decrease in copper leachability for products with higher CuAl2O4 content formed from both alumina precursors despite their different sintering behavior. Meanwhile, the leachability of aluminum was much lower than that of copper, and it decreased by more than fourfold through the formation of CuAl2O4 spinel in γ-Al2O3 system. This study clearly indicates spinel formation as the most crucial metal stabilization mechanism when sintering multiphase copper-bearing industrial sludge with aluminum-rich ceramic raw materials, and suggests a promising and reliable technique for reusing industrial sludge.

  17. Synthesis, Characterization and Decomposition Studies of Tris(N,N-dibenzyldithiocarbamato) Indium(III): Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    NASA Technical Reports Server (NTRS)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.; Fanwick, Philip E.; Khan, Osman; Jin, Michael H.-C.; Hepp, Aloysius F.

    2005-01-01

    Tris(bis(phenylmethyl)carbamodithioato-S,S ), commonly referred to as tris(N,Ndibenzyldithiocarbamato) indium(III), In(S2CNBz2)3, was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1 bar with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry and Fourier-Transform infrared spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS2 and benzyl moieties in to the gas phase, resulting in bulk In2S3. Preliminary spray CVD experiments indicate that In(S2CNBz2)3 decomposed on a Cu substrate reacts to produce stoichiometric CuInS2 films.

  18. Natural attenuation of inorganic pollutants (copper, sulfate) in the aquifer below an industrial site

    NASA Astrophysics Data System (ADS)

    Bourg, A. C. M.; Kedziorek, M. A. M.

    2003-05-01

    The contamination of soils and aquifers by inorganic pollutants is so widespread in industrial sites that it does not seem economically feasible to decontaminate the large areas or soil volumes involved. It is therefore interesting to investigate whether the local environment is capable to attenuate this contamination. Natural attenuation by degradation seems realistic for many organic pollutants. Here we show that it can take place also for inorganic pollutants. The phreatic fill aquifer underlying an industrial plant located on the river banks of the Garonne River is contaminated by acidic water (pH down to 1) and high concentrations of sulfate (up to 50 g/L) and copper (up to 30 g/L). As acid water, rich in Cu and sulfate. migrates away from the contamination source, pH increases due to buffering of aquifer solids, dissolved Cu concentrations decrease by 6 orders of magnitude, while sulfate concentrations decrease little.

  19. Atmospheric Deposition of Indium in the Northeastern United States: Flux and Historical Trends.

    PubMed

    White, Sarah Jane O; Keach, Carrie; Hemond, Harold F

    2015-11-01

    The metal indium is an example of an increasingly important material used in electronics and new energy technologies, whose environmental behavior and toxicity are poorly understood despite increasing evidence of detrimental health impacts and human-induced releases to the environment. In the present work, the history of indium deposition from the atmosphere is reconstructed from its depositional record in an ombrotrophic bog in Massachusetts. A novel freeze-coring technique is used to overcome coring difficulties posed by woody roots and peat compressibility, enabling retrieval of relatively undisturbed peat cores dating back more than a century. Results indicate that long-range atmospheric transport is a significant pathway for the transport of indium, with peak concentrations of 69 ppb and peak fluxes of 1.9 ng/cm2/yr. Atmospheric deposition to the bog began increasing in the late 1800s/early 1900s, and peaked in the early 1970s. A comparison of deposition data with industrial production and emissions estimates suggests that both coal combustion and the smelting of lead, zinc, copper, and tin sulfides are sources of indium to the atmosphere in this region. Deposition appears to have decreased considerably since the 1970s, potentially a visible effect of particulate emissions controls instated in North America during that decade.

  20. Reduction of pollutants and disinfection of industrial wastewater by an integrated system of copper electrocoagulation and electrochemically generated hydrogen peroxide.

    PubMed

    Barrera-Díaz, Carlos E; Frontana-Uribe, Bernardo A; Roa-Morales, Gabriela; Bilyeu, Bryan W

    2015-01-01

    The objective of this study was to evaluate the effect of copper electrocoagulation and hydrogen peroxide on COD, color, turbidity, and bacterial activity in a mixed industry wastewater. The integrated system of copper electrocoagulation and hydrogen peroxide is effective at reducing the organic and bacterial content of industrial wastewater. The copper electrocoagulation alone reduces COD by 56% in 30 min at pH 2.8, but the combined system reduces COD by 78%, biochemical oxygen demand (BOD5) by 81%, and color by 97% under the same conditions. Colloidal particles are flocculated effectively, as shown by the reduction of zeta potential and the 84% reduction in turbidity and 99% reduction in total solids. Additionally, the total coliforms, fecal coliforms, and bacteria are all reduced by 99%. The integrated system is effective and practical for the reduction of both organic and bacterial content in industrial wastewater.

  1. Tracking the Sources of Indium to the Environment

    NASA Astrophysics Data System (ADS)

    White, S. O.; Hemond, H.

    2009-12-01

    Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known about the natural or industrial cycling of indium, and although toxicity has been shown, toxicological data is incomplete and indium is not currently regulated in the United States. A review of the literature has shown that industrial releases of indium to the environment presently dominate natural fluxes. Mining and coal burning are the primary industrial sources of indium to the environment, with releases from the semiconductor industry small at present. This scenario may change with the rapid growth of semiconductor industries. In order to quantify releases of indium to the environment, it may be useful to exploit differences in the ratio of indium’s two stable isotopes, indium-113 and indium-115, from various sources. This method of source-tracking has proven useful for elements such as lead, where pollutant sources have significantly different isotopic ratios. Few measurements of indium isotopes have been published, and are mainly for purified indium metal or indium compounds; none are for environmental samples. The most recent measurements have shown 95.67 - 95.77% indium-115 and 4.23 - 4.33% indium-113, suggesting a range of natural isotopic abundances of at least 25 per mil. Our own measurements of highly purified, semiconductor grade indium show 95.9% indium-115 and 4.1% indium-113, indicating this range may be even larger. However, while the differences may be attributed to natural variation in isotopic ratios due to source differences or fractionation during processing, they could also be due to analytical error such as instrument fractionation. No isotopic reference material apparently exists with which to normalize measurements, therefore the reporting of absolute isotope percentages and lab-to-lab comparisons are difficult. Additionally, we have seen only a 0.5 per mil

  2. Treatment of copper ores and concentrates with industrial nitrogen species catalyzed pressure leaching and non-cyanide precious metals recovery

    NASA Astrophysics Data System (ADS)

    Anderson, Corby G.

    2003-04-01

    Today, with a stringent economic and environmental climate prevailing in the copper business, there is increased interest in evaluating new processing alternatives for production. Hydrometallurgical pressure oxidation of copper concentrates is one of the more viable approaches, and several technological candidates have emerged. Of these, an overlooked but, ironically, the first industrially proven methodology utilized nitrogen species catalyzation in the oxidizing pressure-leach system to produce copper via solvent extraction/electrowinning. Given its advantages, this may prove to be a feasible process alternative for the future. In this article, the history of the system and its application to copper concentrates and ores will be outlined. In particular, a non-cyanide methodology for effective recovery of precious metals from chalcopyrite concentrates will be discussed.

  3. [The importance of behavioral risk factors for bronchopulmonary pathology in copper-nickel industry workers].

    PubMed

    Syurin, S A; Nikanov, A N; Frolova, N M

    2013-01-01

    The effect of harmful behavioral factors on the development of chronic bronchopulmonary diseases (CBPD) was investigated in 1811 copper-nickel industry workers. The study showed that the most pronounced negative impact on respiratory system was caused by smoking. It manifested itself both by a decrease in the number of healthy individuals and by an increased risk for developing chronic bronchitis and chronic obstructive pulmonary disease. Excessive alcohol consumption and obesity did not significantly affect the development of CBPD. However, when combined with smoking, they potentiate its negative pneumotropic action. It is concluded that early detection and management of modifiable non-productive risk factors for CBPD is an effective way to improve the respiratory health of this category of workers.

  4. Natural attenuation of copper in the water table aquifer below an industrial site

    NASA Astrophysics Data System (ADS)

    Kedziorek, M. A.

    2003-12-01

    The contamination of soils and aquifers by inorganic pollutants is so extensive in industrial sites that it hardly seems economically feasible to decontaminate the large areas or soil volumes involved. It is therefore worthwhile to investigate whether the local environment is capable of attenuating contamination. Natural attenuation by degradation seems realistic for many organic pollutants. We show that it can also occur for inorganic pollutants. The phreatic-fill aquifer underlying an industrial plant located on the banks of the Garonne River (Southwestern France) is contaminated by acidic water (pH down to 1) and high concentrations of sulfate (up to 50 g/L) and copper (up to 30 g/L). As acidic water, rich in Cu and sulfate, moves away from the contamination source, pH increases due to buffering of aquifer solids, dissolved Cu concentrations decrease by 6 orders of magnitude, while sulfate concentrations decrease little. The Cu disappearing from the water phase is found as solid in cores in the area of the site where pH increases to 5-6.

  5. InP (Indium Phosphide): Into the future

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.

    1989-01-01

    Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

  6. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    NASA Astrophysics Data System (ADS)

    Burghoorn, M.; Kniknie, B.; van Deelen, J.; Xu, M.; Vroon, Z.; van Ee, R.; van de Belt, R.; Buskens, P.

    2014-12-01

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  7. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    SciTech Connect

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van; Xu, M.; Vroon, Z.; Belt, R. van de; Buskens, P. E-mail: buskens@dwi.rwth-aachen.de

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  8. Influence of copper to indium atomic ratio on the properties of Cu-In-Te based thin-film solar cells prepared by low-temperature co-evaporation

    SciTech Connect

    Mise, Takahiro; Nakada, Tokio

    2012-09-15

    The influence of copper to indium atomic ratio (Cu/In) on the properties of Cu-In-Te based thin films and solar cells was investigated. The films (Cu/In = 0.38-1.17) were grown on both bare and Mo-coated soda-lime glass substrates at 250 Degree-Sign C by single-step co-evaporation using a molecular beam epitaxy system. Highly (112)-oriented CuInTe{sub 2} films were obtained at Cu/In ratios of 0.84-0.99. However, stoichiometric and Cu-rich films showed a poor film structure with high surface roughness. The films consist of polyhedron-shaped grains, which are related to the coexistence of a Cu{sub 2-x}Te phase, and significant evidence for the coexistence of the Cu{sub 2-x}Te phase in the stoichiometric and Cu-rich films is presented. KCN treatment was performed for the films in order to remove the Cu{sub 2-x}Te phase. The stoichiometric CuInTe{sub 2} thin films exhibited a high mobility above 50 cm{sup 2}/V s at room temperature after the KCN treatment. A preliminary solar cell fabricated using a 1.4-{mu}m-thick Cu-poor CuInTe{sub 2} thin film (Cu/In = 0.84, E{sub g} = 0.988 eV) yielded a total-area efficiency of 2.10%. The photovoltaic performance of the cell was improved after long-term ambient aging in dark conditions.

  9. Removal of organic pollutants in industrial wastewater with an integrated system of copper electrocoagulation and electrogenerated H₂O₂.

    PubMed

    Barrera-Díaz, Carlos; Frontana-Uribe, Bernado; Bilyeu, Bryan

    2014-06-01

    The effectiveness of organics removal of an integrated electrochemical process, namely, electrocoagulation with copper ions followed by the use of electrogenerated hydrogen peroxide was evaluated with an industrial wastewater. The copper (II) ions addition into the wastewater using electro-dissolution of copper electrodes, reduces the chemical oxygen demand (COD) by 56% after 30 min of treatment, under optimal conditions of pH 2,8 and 14.2 mA cm(-2) of current density. The integrated electrochemical process reduces the COD by 78%, BOD₅ by 81%, color by 97% and fecal coliforms by 99.9%. The wastewater quality was monitored using UV-Vis spectrometry and Z-potential in order to characterize raw and treated wastewater.

  10. [Three cases of indium lung].

    PubMed

    Taguchi, Osamu; Chonan, Tatsuya

    2006-07-01

    The production of indium tin oxide (ITO) has been increasing during the past decade because of its use in liquid crystal and plasma display panels. Following the first report on lethal lung injury in a ITO worker in 2001, we began pulmonary check-ups for 115 workers in the plant in our capacity of industrial physicians of the plant. Hence, we report interstitial pulmonary disease in 3 workers who had engaged in wet-surface grinding of ITO for 8 to 12 years and had significant lung injuries. The serum indium level and serum concentration of KL-6 were significantly elevated in all 3 cases. One non-smoker case among them showed severe obstructive changes on spirometry and had an episode of repeated bilateral pneumothorax before and during the follow-up period. All 3 cases showed both interstitial and/or emphysematous changes on HRCT. It is suggested that inhaled indium compounds can cause a new and unique interstitial pulmonary disease.

  11. Treatment of fertilizer industry wastewater by catalytic peroxidation process using copper-loaded SBA-15.

    PubMed

    Singh, Seema; Srivastava, Vimal Chandra; Mandal, Tapas Kumar

    2015-01-01

    The present study reports use of the catalytic peroxidation (CPO) method for treatment of actual fertilizer industry wastewater (FIW) by using copper-loaded Santa Barbara amorphous-15 (Cu/SBA-15) catalyst. FIW consists of toxic nitrogenous and phosphorus containing compounds that are not easily degraded by the conventional physicochemical and biological treatment methods. In the present study, Box-Behnken (BB) experimental design methodology was used for optimization of three independent parameters namely catalytic dose (m), initial pH (pHo), and H2O2 concentration. Maximum 83% COD removal was obtained at m = 4.5 g L(-1), pHo = 9.2 and H2O2 concentration = 2.0 mL L(-1). Wastewater and catalyst recovered at optimum treatment condition were characterized by various techniques. UV-visible and Fourier transform infrared (FTIR) techniques were used for understanding the treatment mechanism. Textural and thermogravimetric (TGA/DTA) analysis were used for determining the characteristic of catalyst before and after treatment. The stability and performance of the Cu/SBA-15 catalyst was also determined by using the reusability tests.

  12. Waste biomass adsorbents for copper removal from industrial wastewater--a review.

    PubMed

    Bilal, Muhammad; Shah, Jehanzeb Ali; Ashfaq, Tayyab; Gardazi, Syed Mubashar Hussain; Tahir, Adnan Ahmad; Pervez, Arshid; Haroon, Hajira; Mahmood, Qaisar

    2013-12-15

    Copper (Cu(2+)) containing wastewaters are extensively released from different industries and its excessive entry into food chains results in serious health impairments, carcinogenicity and mutagenesis in various living systems. An array of technologies is in use to remediate Cu(2+) from wastewaters. Adsorption is the most attractive option due to the availability of cost effective, sustainable and eco-friendly bioadsorbents. The current review is dedicated to presenting state of the art knowledge on various bioadsorbents and physico-chemical conditions used to remediate Cu(2+) from waste streams. The advantages and constraints of various adsorbents were also discussed. The literature revealed the maximum Cu adsorption capacities of various bioadsorbents in the order of algae>agricultural and forest>fungal>bacterial>activated carbon>yeast. However, based on the average Cu adsorption capacity, the arrangement can be: activated carbon>algal>bacterial>agriculture and forest-derived>fungal>yeast biomass. The data of Cu removal using these bioadsorbents were found best fit both Freundlich and Langmuir models. Agriculture and forest derived bioadsorbents have greater potential for Cu removal because of higher uptake, cheaper nature, bulk availability and mono to multilayer adsorption behavior. Higher costs at the biomass transformation stage and decreasing efficiency with desorption cycles are the major constraints to implement this technology.

  13. New Cu(TiBN x ) copper alloy films for industrial applications

    NASA Astrophysics Data System (ADS)

    Lin, Chon-Hsin

    2016-06-01

    In this study, I explore a new type of copper alloy, Cu(TiBN x ), films by cosputtering Cu and TiB within an Ar/N2 gas atmosphere on Si substrates. The films are then annealed for 1 h in a vacuum environment at temperatures up to 700 °C. The annealed films exhibit not only excellent thermal stability and low resistivity but also little leakage current and strong adhesion to the substrates while no Cu/Si interfacial interactions are apparent. Within a Sn/Cu(TiBN x )/Si structure at 200 °C, the new alloy exhibits a minute dissolution rate, which is lower than that of pure Cu by at least one order of magnitude. Furthermore, the new alloy’s consumption rate is comparable to that of Ni commonly used in solder joints. The new films appear suitable for some industrial applications, such as barrierless Si metallization and new wetting and diffusion barrier layers required in flip-chip solder joints.

  14. Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. I - Defect structure of undoped and copper doped Hg/0.8/Cd/0.2/Te. II - Defect structure of indium-doped Hg/0.8/Cd/0.2/Te

    NASA Technical Reports Server (NTRS)

    Vydyanath, H. R.

    1981-01-01

    Hall effect and mobility measurements were conducted on undoped Hg(0.8)Cd(0.2)Te crystals which were quenched to room temperature after being subjected to equilibration at temperatures ranging from 400 to 655 C in various Hg atmospheres. The variation of the hole concentration in the cooled crystals at 77 K as a function of Hg's partial pressure at the equilibration temperature, together with a comparison of the hole mobility in the undoped samples with that in copper-doped ones, yields a defect model for the undoped crystals according to which they are intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. In the second part of this paper, the effects of indium doping are considered. The concentration of electrons obtained in the cooled crystals was found to be lower than the intrinsic carrier concentration at the equilibration temperatures. A defect model is proposed according to which most of the indium is incorporated as In2Te3(s) dissolved in the crystal, with only a small fraction of indium acting as single donors occupying Hg lattice sites.

  15. Investigating relationships between biomarkers of exposure and environmental copper and manganese levels in house dusts from a Portuguese industrial city.

    PubMed

    Reis, A P; Costa, S; Santos, I; Patinha, C; Noack, Y; Wragg, J; Cave, M; Sousa, A J

    2015-08-01

    This study reports on data obtained from a pilot survey focusing on house dust and toenail metal(loids) concentrations in residents living in the industrial city of Estarreja. The study design hereby described aims at investigating relationships between human toenails and both copper and manganese levels in settled house dusts. A total of 21 households and 30 individuals were recruited for the pilot study: 19 households corresponding to 27 residents living near the industrial complex, forming the exposed group, plus 2 households and 3 residents from residential areas with no anticipated environmental contaminants that were used for comparison. Factorial analysis was used for source identification purposes. Investigation on the potential influence of environmental factors over copper and manganese levels in the toenails was carried out via questionnaire data and multiple correspondence analysis. The results show that copper concentrations are more elevated in the indoor dusts, while manganese concentrations are more elevated in the outdoor dust samples. The geometrical relationships in the datasets suggest that the backyard soil is a probable source of manganese to the indoor dust. Copper and manganese contents in the toenail clippings are more elevated in children than in adults, but the difference between the two age groups is not statistically significant (p > 0.05). Investigation of environmental factors influencing the exposure-biomarker association indicates a probable relationship between manganese contents in indoor dust and manganese levels in toenail clippings, a result that is partially supported by the bioaccessibility estimates. However, for copper, no relationship was found between indoor dusts and the biomarkers of exposure.

  16. Synthesis of indium phosphide

    NASA Astrophysics Data System (ADS)

    Adamski, Joseph A.

    1983-11-01

    Polycrystalline ingots of indium phosphide have been synthesized using the direct reaction technique. Indium phosphide has been grown under various phosphorus pressures (3 to 30 atm). Several temperature profiles were used to study the effect of temperature on mobility, carrier concentration, grain size, homogeneity, and stoichiometry. Quartz and pyrolytic boron nitride boats are used. Several experiments were performed placing the PBN and quartz boats inside born nitride and aluminum oxide tubes in an attempt to lower silicon contamination. In-situ vacuum baking of the raw indium charge has resulted in a significant improvement in the purity of the synthesized InP.

  17. [Indium lung disease].

    PubMed

    Nakano, Makiko; Omae, Kazuyuki

    2014-02-01

    "Indium lung" is a new occupational lung disease. The global demand for indium, the major material used in manufacturing flat-screen display panels, has skyrocketed since the 1990s (Japan comprises 85% of the worldwide demand). The first case was reported in Japan in 2003, followed by seven cases (interstitial pneumonia and emphysema) in Japan. Two pulmonary alveolar proteinosis (PAP) cases in the USA followed in 2011. Indium lung has been described as interstitial pneumonia, pneumothorax, emphysema, and PAP. In 2013, The Japan Ministry of Health, Labor and Welfare issued an "Ordinance on the Prevention of Hazards Due to Specified Chemical Substances" requiring employers to provide regular health checks for employees and measurements of work environment concentrations of respirable indium dust.

  18. Optimization of bioprocess for production of copper-enriched biomass of industrially important microorganism Saccharomyces cerevisiae.

    PubMed

    Mrvcić, Jasna; Stanzer, Damir; Stehlik-Tomas, Vesna; Skevin, Dubravka; Grba, Slobodan

    2007-04-01

    The production of Saccharomyces cerevisiae cells enriched with copper and the effects of adding copper ions to different media on yeast cell growth and ethanol production were studied. In the media Cu(2+) concentrations of up to 0.094 mM had no effect on alcoholic fermentation, whereas higher Cu(2+) concentrations markedly decreased yeast cell growth rate and ethanol production. Under static conditions, the maximum amounts of copper uptake (i.e., 1.16 mg/g, 1.2 mg/g and 0.81 mg/g dry matter yeast biomass for glucose, sucrose and molasses media, respectively) were obtained after 8 h of fermentation, whereas under dynamic conditions smaller amounts of copper uptake (i.e., 0.98 mg/g, 1.02 mg/g and 0.7 mg/g dry matter yeast biomass for glucose, sucrose and molasses media, respectively) were obtained after 6 h of fermentation.

  19. Fluxless indium and silver-indium bonding processes for photonics and high-temperature electronics

    NASA Astrophysics Data System (ADS)

    So, William Wilson

    .5 kg. Indium has been a choice for bonding photonic devices such as laser diodes. A major concern is the change of solder composition during device operation caused by diffusion of copper atoms from the copper substrate. Copper atoms can easily diffuse into and react with the indium joint to form intermetallic compounds Cu2In, CuIn, Cu9In4, Cu11 In9. This reaction continues even after the bonding process is completed and the device is put in operation at some temperature. Consequently, the composition, the microstructure and physical properties of the joint change during the device life.To prevent the intermetallic formation, the solder joint must remain indium rich. A barrier metallization on the copper substrate is necessary to stop copper atoms from getting into the solder joint. Device packages usually need more than one soldering operation to complete. The indium-rich alloys have a 156°C melting temperature. During subsequent bonding operations, another process with a bonding temperature lower than 156°C is valuable. Desirable bonding temperature should be lower than 156°C but higher than the maximum temperature of the joint during device operation. In-Sn eutectic alloy with a melting temperature of 118°C is chosen. (Abstract shortened by UMI.)

  20. Regularly arranged indium islands on glass/molybdenum substrates upon femtosecond laser and physical vapor deposition processing

    NASA Astrophysics Data System (ADS)

    Ringleb, F.; Eylers, K.; Teubner, Th.; Boeck, T.; Symietz, C.; Bonse, J.; Andree, S.; Krüger, J.; Heidmann, B.; Schmid, M.; Lux-Steiner, M.

    2016-03-01

    A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass, which can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide used in photovoltaics. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.

  1. Indium Lung Disease

    PubMed Central

    Nakano, Makiko; Omae, Kazuyuki; Takeuchi, Koichiro; Chonan, Tatsuya; Xiao, Yong-long; Harley, Russell A.; Roggli, Victor L.; Hebisawa, Akira; Tallaksen, Robert J.; Trapnell, Bruce C.; Day, Gregory A.; Saito, Rena; Stanton, Marcia L.; Suarthana, Eva; Kreiss, Kathleen

    2012-01-01

    Background: Reports of pulmonary fibrosis, emphysema, and, more recently, pulmonary alveolar proteinosis (PAP) in indium workers suggested that workplace exposure to indium compounds caused several different lung diseases. Methods: To better understand the pathogenesis and natural history of indium lung disease, a detailed, systematic, multidisciplinary analysis of clinical, histopathologic, radiologic, and epidemiologic data for all reported cases and workplaces was undertaken. Results: Ten men (median age, 35 years) who produced, used, or reclaimed indium compounds were diagnosed with interstitial lung disease 4-13 years after first exposure (n = 7) or PAP 1-2 years after first exposure (n = 3). Common pulmonary histopathologic features in these patients included intraalveolar exudate typical of alveolar proteinosis (n = 9), cholesterol clefts and granulomas (n = 10), and fibrosis (n = 9). Two patients with interstitial lung disease had pneumothoraces. Lung disease progressed following cessation of exposure in most patients and was fatal in two. Radiographic data revealed that two patients with PAP subsequently developed fibrosis and one also developed emphysematous changes. Epidemiologic investigations demonstrated the potential for exposure to respirable particles and an excess of lung abnormalities among coworkers. Conclusions: Occupational exposure to indium compounds was associated with PAP, cholesterol ester crystals and granulomas, pulmonary fibrosis, emphysema, and pneumothoraces. The available evidence suggests exposure to indium compounds causes a novel lung disease that may begin with PAP and progress to include fibrosis and emphysema, and, in some cases, premature death. Prospective studies are needed to better define the natural history and prognosis of this emerging lung disease and identify effective prevention strategies. PMID:22207675

  2. Phase analytical studies of industrial copper smelting slags. Part I: Silicate slags

    NASA Astrophysics Data System (ADS)

    Rüffler, R.; Dávalos, J.

    1998-12-01

    The pyrometallurgical extraction of copper from sulfide ore concentrates is determined by the behaviour of the associated iron during smelting. Hence, 57Fe Mössbauer spectroscopy is an attractive tool for studying the phases in silicate slags from German and Chilean smelting plants. Other methods used were ore microscopy, electron microprobe analysis, and X-ray powder diffraction.

  3. Ammonia Leaching: A New Approach of Copper Industry in Hydrometallurgical Processes

    NASA Astrophysics Data System (ADS)

    Radmehr, Vahid; Koleini, Seyed Mohammad Javad; Khalesi, Mohammad Reza; Tavakoli Mohammadi, Mohammad Reza

    2013-10-01

    Ammonia and ammonium salts have been recognized as effective leaching agents in hydrometallurgical processes due to low toxicity and cost, easy recovery and high selective recovery of metals. New research findings on considerable advantages of leaching by these agents and elimination of problems associated with acid leaching have resulted in a new approach in the world to this method. The investigations in this field indicate more frequent use of this method for extracting copper from ore and concentrate relative to other basic metals. In this paper, an attempt was made to describe the basis and different ammonia leaching methods and present the major research activities in this field for copper. Also latest findings and related novel processes have been presented. Comparisons including assessment of advantages and disadvantages of this method relative to acid leaching method, kinetic study of copper ammonia leaching and evaluation of Eh-pH diagrams in a system containing water and ammonia are other parts of this study. Finally, by describing the studies on copper extraction from the resulting pregnant solutions, the applicable extraction agents have been reviewed.

  4. Treatment of copper industry waste and production of sintered glass-ceramic.

    PubMed

    Coruh, Semra; Ergun, Osman Nuri; Cheng, Ta-Wui

    2006-06-01

    Copper waste is iron-rich hazardous waste containing heavy metals such as Cu, Zn, Co, Pb. The results of leaching tests show that the concentration of these elements exceeds the Turkish and EPA regulatory limits. Consequently, this waste cannot be disposed of in its present form and therefore requires treatment to stabilize it or make it inert prior to disposal. Vitrification was selected as the technology for the treatment of the toxic waste under investigation. During the vitrification process significant amounts of the toxic organic and inorganic chemical compounds could be destroyed, and at the same time, the metal species are immobilized as they become an integral part of the glass matrix. The copper flotation waste samples used in this research were obtained from the Black Sea Copper Works of Samsun, Turkey. The samples were vitrified after being mixed with other inorganic waste and materials. The copper flotation waste and their glass-ceramic products were characterized by X-ray analysis (XRD), scanning electron microscopy and by the toxicity characteristic leaching procedure test. The products showed very good chemical durability. The glass-ceramics fabricated at 850 degrees C/2 h have a large application potential especially as construction and building materials. PMID:16784166

  5. Indium sealing techniques.

    NASA Technical Reports Server (NTRS)

    Hochuli, U.; Haldemann, P.

    1972-01-01

    Gold films are used as an alloying flux to form 5-micron-thick indium film seals at temperatures below 300 C. Pyrex was sealed to quartz, ULE, CER-VIT, Irtran 2, Ge, GaAs, Invar, Kovar, Al, and Cu. The seals can also be used as current feedthroughs and graded seals.

  6. Respirable Indium Exposures, Plasma Indium, and Respiratory Health Among Indium-Tin Oxide (ITO) Workers

    PubMed Central

    Cummings, Kristin J.; Virji, M. Abbas; Park, Ji Young; Stanton, Marcia L.; Edwards, Nicole T.; Trapnell, Bruce C.; Carey, Brenna; Stefaniak, Aleksandr B.; Kreiss, Kathleen

    2016-01-01

    Background Workers manufacturing indium-tin oxide (ITO) are at risk of elevated indium concentration in blood and indium lung disease, but relationships between respirable indium exposures and biomarkers of exposure and disease are unknown. Methods For 87 (93%) current ITO workers, we determined correlations between respirable and plasma indium and evaluated associations between exposures and health outcomes. Results Current respirable indium exposure ranged from 0.4 to 108 μg/m3 and cumulative respirable indium exposure from 0.4 to 923 μg-yr/m3. Plasma indium better correlated with cumulative (rs = 0.77) than current exposure (rs = 0.54) overall and with tenure ≥1.9 years. Higher cumulative respirable indium exposures were associated with more dyspnea, lower spirometric parameters, and higher serum biomarkers of lung disease (KL-6 and SP-D), with significant effects starting at 22 μg-yr/m3, reached by 46% of participants. Conclusions Plasma indium concentration reflected cumulative respirable indium exposure, which was associated with clinical, functional, and serum biomarkers of lung disease. PMID:27219296

  7. Emissions from the copper-nickel industry on the Kola Peninsula and at Noril'sk, Russia

    USGS Publications Warehouse

    Boyd, Ron; Barnes, S.-J.; De Caritat, P.; Chekushin, V.A.; Melezhik, V.A.; Reimann, C.; Zientek, M.L.

    2009-01-01

    Published estimates for base metal emissions from the copper-nickel industry on the Kola Peninsula are re-examined in the light of (a) chemical data on the composition of the ores; (b) official emission figures for 1994; and (c) modelled emissions based on dry and wet deposition estimates derived from data for snow and rain samples collected in 1994. The modelled emissions, official emission figures and chemical data are mutually compatible for Ni, Cu and Co and show that previously published figures underestimated the emissions of the major elements, Ni and Cu (though within the same order of magnitude) and overestimated the emissions of As, Pb, Sb and Zn by up to several orders of magnitude, in some cases exceeding the calculated total input to the plants. Published estimates have neglected information on the nature and chemistry of the ores processed in metallurgical industries in the Noril'sk area of Siberia and the Urals. Revised emission estimates for 1994, using knowledge of the chemistry of the ores, are proposed: taken with published information on total emissions up to 2000 these data give an indication of emission levels in more recent years. ?? 2008 Elsevier Ltd. All rights reserved.

  8. Indium acetate toxicity in male reproductive system in rats.

    PubMed

    Lee, Kuo-Hsin; Chen, Hsiu-Ling; Leung, Chung-Man; Chen, Hsin-Pao; Hsu, Ping-Chi

    2016-01-01

    Indium, a rare earth metal characterized by high plasticity, corrosion resistance, and a low melting point, is widely used in the electronics industry, but has been reported to be an environmental pollutant and a health hazard. We designed a study to investigate the effects of subacute exposure of indium compounds on male reproductive function. Twelve-week old male Sprague-Dawley rats were randomly divided into test and control groups, and received weekly intraperitoneal injections of indium acetate (1.5 mg/kg body weight) and normal saline, respectively, for 8 weeks. Serum indium levels, cauda epididymal sperm count, motility, morphology, chromatin DNA structure, mitochondrial membrane potential, oxidative stress, and testis DNA content were investigated. The indium acetate-treated group showed significant reproductive toxicity, as well as an increased percentage of sperm morphology abnormality, chromatin integrity damage, and superoxide anion generation. Furthermore, positive correlations among sperm morphology abnormalities, chromatin DNA damage, and superoxide anion generation were also noted. The results of this study demonstrated the toxic effect of subacute low-dose indium exposure during the period of sexual maturation on male reproductive function in adulthood, through an increase in oxidative stress and sperm chromatin DNA damage during spermiogenesis, in a rodent model.

  9. Oxidation Studies of Copper-Indium and Stability Studies on Cadmium Copper-Indium Solar Cells.

    NASA Astrophysics Data System (ADS)

    Jamjoum, Osama Mohamed

    The subsequent aims of this thesis have been:. 1. To investigate the initial, thermal and anodic oxidation of p-type single-crystal CuInSe(,2) using complementary Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) x-ray photoelectron spectroscopy (XPS), low energy loss spectroscopy (LELS) and ellipsometry. The air-grown and Br-Methanol etched CuInSe(,2) oxide is thin (20 - 40 (ANGSTROM)). Thermal oxides of CuInSe(,2) grow rapidly above 180(DEGREES)C. The oxides are predominately In(,2)O(,3) with less than 10% SeO(,2). No Cu or Cu-oxides were detected either by initial oxidation (LELS data) or thermal oxidation (XPS). The interface between the oxides was examined using AES depth-compositional profiling and XPS, and Cu(,x)Se is found to form at the interface during oxide growth. Oxide layer thicknesses and Se-3d electron escape depths were estimated from a consideration of XPS peak intensities. Unlike the thermal oxide, the anodic oxide was found to contain free Se and Cu-oxides (CuO and Cu(,2)O). However from this work it was not possible to confirm the formation of the Cu(,x)Se layer at the anodic oxide-semiconductor interface. 2. To investigate and correlate the compositional and chemical properties of the CdS/CuInSe(,2) solar cells with photovoltaic performance under various heat-treatments and prolonged illumination. These investigations show that: (1) The initial growth of CdS/CuInSe(,2) produces a mixed Cu(,2)S/Cu(,2)Se transition layer at the CdS/CuInSe(,2) interface. (2) The CdS/CuInSe(,2) is electrically and compositionally stable up to 170(DEGREES)C. However, at temperatures greater or equal to 240(DEGREES)C, diffusion of Cd into the Cu-ternary interface takes place. Such diffusion might be one of the reasons for cell degradation. (3) Cell performance has improved as a result of oxygen anneal. Two mechanisms have been suggested through this work that might account for such an improvement. (i) Formation of a thin layer of CdSO(,4) which seems to reduce surface recombination and reflection losses which evidently increases the open -circuit voltage and fill-factor of the cell. (ii) Formation of a homojunction between the two layers of CuInSe(,2) (high and low resistivity layers) and a heterojunction at the CdS/CuInSe(,2) interface. The formation of these two junctions might be due to partial type-conversion.

  10. Synthesis and characterization of electrodeposited copper indium selenide and copper (indium, gallium) selenide thin films

    NASA Astrophysics Data System (ADS)

    Friedfeld, Robert Bonheur

    Electrodeposition is a cost effective method for growing polycrystalline thin films which is not limited by substrate/superstrate size and does not require the use of a vacuum. In this research, CuInSe2 and Cu(In,Ga)Se 2 polycrystalline thin films have been synthesized by electrodeposition. Both of these materials have very high absorption coefficients when compared to Si and GaAs, and can have their band gaps adjusted through the control of their stoichiometries. Both CuInSe2 and Cu(In,Ga)Se2 are direct band gap semiconductors with the chalcopyrite crystal structure. Therefore, these materials are important for use in high efficiency photovoltaic solar cells. In an attempt to understand how the composition, morphology and crystallinity depend on electrodeposition conditions, various thin films of CuInSe2 and Cu(In,Ga)Se2 were grown by electrodeposition. These films were then characterized by a number of characterization techniques which include (1) scanning electron microscopy, (2) scanning tunneling microscopy, (3) energy dispersive spectroscopy, (4) X-ray diffraction, and (5) Auger electron spectroscopy. Results based on this research indicate two main conclusions. (1) Modulated or layered films of CuInSe2 can be grown by electrodeposition. Measurements made by Scanning Tunneling Microscopy of cleaved cross sections of the CuInSe2 layered films indicate the successful formation of layers. (2) Cu(In,Ga)Se2 thin films can be electrodeposited by a two-step process with minimal post treatment steps. The process developed here can be done at room temperature. Two electrochemical baths are used, one to electrodeposit a CuGa2 binary alloy, followed by the electrodeposition of a CuInSe2 thin film from another bath. The resulting bilayer film is then annealed in flowing argon at an elevated temperature to form the CIGS compound. Characterization results from measurements made by X-ray diffraction show that the resulting films maintain the basic chalcopyrite structure while the Bragg peaks shift to larger diffraction angles with increasing gallium content in the film. This is evidence to support the successful formation of CIGS films. This data is further corroborated by the energy dispersive spectroscopy and Auger electron spectroscopy data.

  11. Association between GSTO2 polymorphism and the urinary arsenic profile in copper industry workers.

    PubMed

    Paiva, Leiliane; Hernández, Alba; Martínez, Valeria; Creus, Amadeu; Quinteros, Domingo; Marcos, Ricardo

    2010-07-01

    Two members of the recently identified Omega class glutathione S-transferase enzymes (GSTO1 and GSTO2) have been proposed to play a role in the response to arsenic exposure. Therefore, polymorphisms in these genes could be related with variations in the arsenic excretion profile and, consequently, with the individual response to chronic exposure. Exons and flanking regions of GSTO2 gene have been screened in two different ethnic groups (20 Europeans and 20 Chilean Indians), and the urinary arsenic patterns and the GSTO2 Asn142Asp polymorphism have been investigated in 207 copper mine workers occupationally exposed to arsenic. Three polymorphisms of GSTO2 already described were detected in Europeans and Chilean Indians, although with significant different allele frequencies. The genotyping for the Asn142Asp polymorphism revealed that almost no significant association exists between this change and the arsenic excretion profile. However, 142Asp change seems to be correlated with an increase in DMA excretion after age and total urinary arsenic adjustment (OR=3.61; P=0.05). Altogether, our findings indicate that ethnical differences should be taken into account for correlation studies between GST Omega polymorphisms and arsenic susceptibility, and that the 142Asp allozyme could modulate arsenic biotransformation and thereby arsenic toxicity.

  12. Mineral of the month: indium

    USGS Publications Warehouse

    George, Micheal W.

    2004-01-01

    Indium was discovered in Germany in 1863. Although it is a lustrous silver-white color, the finders named the new material for the “indigo” spectral lines the mineral created on the spectrograph. Indium ranks 61st in abundance in Earth’s crust and is about three times more abundant than silver or mercury.

  13. Use of sepiolite as an adsorbent for the removal of copper (II) from industrial waste leachate

    NASA Astrophysics Data System (ADS)

    Gamze Turan, N.; Ardali, Yüksel

    2013-04-01

    Land filling is the most common method of disposal of solid waste all over the world. As well as municipal solid waste, industrial wastes, which may contain hazardous substances, are also received by landfills in many countries. Leachate is one of the problems arising from landfills. When water percolates through solid wastes, contaminants are leached into solution. The major concern with the movement of leachate into the subsurface aquifer is the fate of the constituents found in leachate. The fate of heavy metals is the greatest interest in leachate. Several treatment technologies have been developed for eliminating heavy metals recently. Adsorption is one of the most interesting methods that it has been successfully applied for the heavy metal removal. Activated carbons were widely used as adsorbent materials because of their extended surface area, microporous structure, high adsorption capacity and high degree of surface reactivity. However, it is restricted due to its relatively high price, high operation costs, and problems with generation for the industrial scale applications. Recently, more research efforts have been focused on effective sorbents material in order to minimize the processing cost and solve their disposal problems in an environmentally sustainable way. Adsorption of metal ions onto clay minerals has been studied extensively because both metal ions and clays are common components in nature. The cost of clays is relatively low as compared to other alternative adsorbents. Furthermore, the high specific surface area, chemical and mechanical stability, variety of structural and surface properties and higher values of cation exchange capacities make the clays an excellent group of adsorbents. Sepiolite (Si12O30Mg8(OH)4(H2O)4•8H2O) is a natural, fibrous clay mineral with fine microporous channels running parallel to the length of the fibers. The structure of sepiolite, in some aspects, is similar to those of other 2:1 trioctahedral silicates, such

  14. Investigation of copper telluride nanowires synthesized by electrochemical method

    NASA Astrophysics Data System (ADS)

    Kumar, Suresh; Kundu, Virender; Vohra, Anil; Chakarvarti, S. K.

    2011-07-01

    In the present study the copper telluride (Cu2Te) nanostructures of 100 nm diameter have been fabricated using electro deposition method from an aqueous solution on copper (Cu) and indium tin oxide (ITO) substrates. The synthesized nanostructures are characterized by scanning electron microscope and X-ray diffraction. The XRD analysis confirmed the formation of nanowires of copper telluride. The photoluminescence emission spectrum was obtained at 457.56 nm for 100 nm copper telluride nanowires.

  15. Tracking Indium Emissions to the Atmosphere in the Northeastern United States

    NASA Astrophysics Data System (ADS)

    White, S. O.; Hemond, H.

    2010-12-01

    Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known, however, about the natural or industrial cycling of indium or its environmental behavior. Industrial emissions of indium to the atmosphere are already larger than natural emissions. A review of the literature suggests that mining and coal burning are the primary industrial sources of indium to the atmosphere, while releases from the semiconductor and electronics industries are small at present. This scenario may change with the rapid growth of indium use in electronics and semiconductor industries. In order to determine the concentration of indium in the atmosphere and the natural and anthropogenic sources that contribute to its present concentration, we have measured indium in atmospheric particulate matter in the Northeastern United States. Samples collected every 6th day during 1995 in five different locations from Boston, MA to Rochester, NY showed significant differences between the sample locations and over the course of the year. Using NOAA’s Hybrid Single-Particle Lagrangian Integrated Trajectory (HYSPLIT) model, we have used atmospheric back trajectory analyses to constrain the sources of the indium peaks measured. The back trajectory analysis suggests that the highest indium concentrations come from the north, while lower concentrations are seen in air traveling from the midwestern United States. Together with emissions data for mines, smelters, metal refineries, and coal plants, this approach can be a useful tool for constraining the source of atmospheric pollutants to a particular region, and for confirming the emissions estimates for specific regions.

  16. Assessing toxicity of copper, cadmium and chromium levels relevant to discharge limits of industrial effluents into inland surface waters using common onion, Allium cepa bioassay.

    PubMed

    Hemachandra, Chamini K; Pathiratne, Asoka

    2015-02-01

    Toxicity of copper, cadmium and chromium relevant to established tolerance limits for the discharge of industrial effluents into inland surface waters was evaluated by Allium cepa bioassay. The roots of A. cepa bulbs exposed to Cu(2+) (3 mg L(-1)) individually or in mixtures with Cd(2+) (0.1 mg L(-1)) or/and Cr(6+) (0.1 mg L(-1)) exhibited the highest growth inhibition, mitotic index depression and nuclear abnormalities. Root tip cells exposed to Cr(6+) or Cd(2+) alone or in mixture displayed significant chromosomal aberrations in comparison to the controls. EC50s for root growth inhibition followed the order Cu(2+) < Cd(2+) < Cr(6+) indicating greater toxicity of copper. The results show that the industrial effluent discharge regulatory limits for these metals need to be reviewed considering potential cyto-genotoxicity to biological systems.

  17. [Health effects of solar cell component material. Toxicity of indium compounds to laboratory animals determined by intratracheal instillations].

    PubMed

    Tanaka, Akiyo; Hirata, Miyuki

    2013-01-01

    Owing to the increasing interest being paid to the issue of the global environment, the production of solar cells has increased rapidly in recent years. Copper indium gallium diselenide (CIGS) is a new efficient thin film used in some types of solar cell. Indium is a constitutive element of CIGS thin-film solar cells. It was thought that indium compounds were not harmful until the beginning of the 1990s because there was little information regarding the adverse health effects on humans or animals arising from exposure to indium compounds. After the mid-1990s, data became available indicating that indium compounds can be toxic to animals. In animal studies, it has been clearly demonstrated that indium compounds cause pulmonary toxicity and that the dissolution of indium compounds in the lungs is considerably slow, as shown by repeated intratracheal instillations in experimental animals. Thus, it is necessary to pay much greater attention to human exposure to indium compounds, and precautions against possible exposure to indium compounds are paramount with regard to health management.

  18. The use of exopolysaccharide - producing cyanobacteria as biosorbents to remove copper from industrial waste - waters

    NASA Astrophysics Data System (ADS)

    Rossi, Federico; El Badaoui, Hajar; De Philippis, Roberto

    2014-05-01

    The accumulation of heavy metals in water bodies represent a widespread cause of pollution, and poses the need to develop novel technologies to remove metals at the source, abating the costs of the commonly used chemical and physio-chemical methods. The use of cyanobacteria as biosorbents has been acknowledged as a promising alternative, due to their charged polysaccharidic envelopes which have affinity for metal ions. Nonetheless, the reseach must move towards: i) assessing the effectiveness of the process towards complex wastewater solutions which contain chemical species that can interfere with the sorption process, also considering the characteristics of the used strains, and ii) developing novel devices that support biomass growth and use, in order to achieve a scaling up of the process. We compared the specific removal of three cyanobacteria, Cyanothece 16 Som 2, Cyanothece ET5 and Cyanospira capsulata, towards Cu2+ contained, with various other metals, in two industrial effluents (one at pH 1.26 and one at pH 10.26). The strains were selected due to their previously assayed affinity toward Cu2+ in pure solutions (De Philippis et al. 2011). Acid or basic pretreatments (respectively for the acid and the basic effluent) were performed in the tentative to increase the specific removal. Metal concentration in solution, before and after the contact with the biomasses, was determined by atomic absorption spectrometry. Specific removals resulted different to those obtained towards pure metal solutions, likely due to the presence of other competing ions. Cyanothece 16 Som 2 showed the highest Cu2+ specific removal towards both the effluents. The pretreatment was effective only in the case of the basic effluent. Results proved the capacity of Cyanothece 16 Som 2 to act as a selective Cu2+ sorbent even in the presence of complex solutions. A novel prototype device is being projected in order to support the growth and the immobilization of the cyanobacterial biomass for

  19. Soil acidity status in the vicinity of the Severonikel copper-nickel industrial complex, Kola Peninsula

    NASA Astrophysics Data System (ADS)

    Kashulina, G. M.; Kubrak, A. N.; Korobeinikova, N. M.

    2015-04-01

    The physicochemical properties of soils exposed to emissions from the Severonikel industrial complex (one of the largest sources of SO2 and heavy metals in northern Europe) for 70 years were studied. The results showed that even after the long-term impact of heavy SO2 emissions, the , the content of exchangeable bases, and the base saturation remained at the medium and high levels inherent to undisturbed soils of the region studied. An exclusion was the illuvial horizon of the podzols, where a relative reduction of the (at the level of low values of the natural variation) was revealed. At the same time, the hydrolytic acidity and cation exchange capacity in most samples of podzols, peat eutrophic, and mountain soils in the zone exposed to emissions (local zone) were also reduced. This fact is explained by indirect effects of the emissions: the gradual decrease in the organic matter content in the soils due to the destruction of the vegetation, the absence of fresh plant falloff, the development of erosion, and the disturbance of the hydrological regime of the soils and landscapes.

  20. Effect of Lead and Copper on the Growth of Heavy Metal Resistance Fungi Isolated from Second Industrial City in Riyadh, Saudi Arabia

    NASA Astrophysics Data System (ADS)

    Siham, Al-Kadeeb A.

    In this study, soil samples for isolation of heavy metal resistance fungi were collected from different distance of Electric Meter manufactory in Second Industrial City, Riyadh, Saudi Arabia. Soil samples were analyzed chemically for heavy metal concentrations, total soluble salts and pH and mechanically for composition of soils. Saturation percent were determined also. Eighteen fungal isolates were grown in 10 mM concentration of either lead or copper ions. Aspergillus was predominant and represented by 6 species. Fusarium was represented by 4 species. Mucor was represented by 3 species. Penicillium was represented by 2 species. While Alternaria, Cephaliophora, Eurotium were represented by one species each. The intraspecific variability in growth response to Pb2+ and Cu2+ on agar and liquid culture was studied among isolated fungi. The growth rate of some fungi isolated on solid media was less sensitive to addition of lead or copper than biomass production in liquid culture.

  1. Indium Foil Serves As Thermally Conductive Gasket

    NASA Technical Reports Server (NTRS)

    Eastman, G. Yale; Dussinger, Peter M.

    1993-01-01

    Indium foil found useful as gasket to increase thermal conductance between bodies clamped together. Deforms to fill imperfections on mating surfaces. Used where maximum temperature in joint less than melting temperature of indium. Because of low melting temperature of indium, most useful in cryogenic applications.

  2. [Level of heavy metals in the liver of sheep in experimental poisoning with copper oxide from industrial emissions].

    PubMed

    Vrzgula, L; Bíres, J; Hojerová, A; Vrzgulová, N

    1989-05-01

    The life span and cumulation of heavy metals in the liver of 12 ewes of the Improved Wallachian breed were investigated in relation to feeding pollutants from a copper works. The total intake of copper, iron, zinc, arsenic, cadmium and lead was 466.8; 1253.93; 111.67; 34.75; 0.091; 2.13 mg per experimental animal/day, respectively. The average life span of ewes in the experimental group was 77 days. The difference between the first and the last animal which died from copper intoxication was 18 days. The concentration of copper in the liver of sheep who died from intoxication by this metal (2138.28 +/- 1090.96 mg. kg-1 in dry matter) was significantly higher (p less than 0.01) if compared with the control ewes (212.9 +/- 58.33 mg. .kg-1 in dry matter). In the course of observations no direct dependence between the concentration of copper in the liver and the life span of experimental animals was confirmed. The content of iron and zinc in the liver of experimental animals was within the reference range; the difference in zinc was statistically significant when compared with the control group (p less than 0.01). The intake of pollutants from the copper works increased significantly the concentration of arsenic and lead in the liver of experimental animals (p less than 0.01) if compared with the control group. The amount of cadmium in the liver of experimental ewes was 0.304 +/- 0.22 mg. .kg-1 and in the control ewes 0.285 +/- 0.10 mg.kg-1 in dry matter; no significant difference was determined at the same time.

  3. Optimization of Indium Bump Morphology for Improved Flip Chip Devices

    NASA Technical Reports Server (NTRS)

    Jones, Todd J.; Nikzad, Shouleh; Cunningham, Thomas J.; Blazejewski, Edward; Dickie, Matthew R.; Hoenk, Michael E.; Greer, Harold F.

    2011-01-01

    Flip-chip hybridization, also known as bump bonding, is a packaging technique for microelectronic devices that directly connects an active element or detector to a substrate readout face-to-face, eliminating the need for wire bonding. In order to make conductive links between the two parts, a solder material is used between the bond pads on each side. Solder bumps, composed of indium metal, are typically deposited by thermal evaporation onto the active regions of the device and substrate. While indium bump technology has been a part of the electronic interconnect process field for many years and has been extensively employed in the infrared imager industry, obtaining a reliable, high-yield process for high-density patterns of bumps can be quite difficult. Under the right conditions, a moderate hydrogen plasma exposure can raise the temperature of the indium bump to the point where it can flow. This flow can result in a desirable shape where indium will efficiently wet the metal contact pad to provide good electrical contact to the underlying readout or imager circuit. However, it is extremely important to carefully control this process as the intensity of the hydrogen plasma treatment dramatically affects the indium bump morphology. To ensure the fine-tuning of this reflow process, it is necessary to have realtime feedback on the status of the bumps. With an appropriately placed viewport in a plasma chamber, one can image a small field (a square of approximately 5 millimeters on each side) of the bumps (10-20 microns in size) during the hydrogen plasma reflow process. By monitoring the shape of the bumps in real time using a video camera mounted to a telescoping 12 magnifying zoom lens and associated optical elements, an engineer can precisely determine when the reflow of the bumps has occurred, and can shut off the plasma before evaporation or de-wetting takes place.

  4. Groundwater composition near the nickel—copper smelting industry on the Kola Peninsula, central Barents Region (NW Russia and NE Norway)

    NASA Astrophysics Data System (ADS)

    de Caritat, Patrice; Danilova, Svetlana; Jæger, Øystein; Reimann, Clemens; Storrø, Gaute

    1998-07-01

    The chemical composition of 185 groundwater samples collected from two catchments in the extreme NE Norway and NW Russia over the period April 1994 to November 1995 is reported in terms of Ag, Al, As, B, Ba, Be, Bi, Br, Ca, Cd, Cl, Co, Cr, Cu, F, Fe, K, Li, Mg, Mn, Mo, Na, Ni, NO 3, P, Pb, PO 4,Rb, S, Sb, Se, Si, SO 4, Sr, Th, Ti, Tl, U, V and Zn concentrations (as determined by ICP-MS, ICP-AES and IC), pH and electrical conductance. One catchment (C2) is located in Russia 5 km downwind of the nickel—copper ore smelting industry in Monchegorsk, which is a major SO 2 and trace metal emission source, the other (C5) is located in Norway 30 km off-wind from the nickel-copper ore smelter in Nikel and 52 km off-wind from the nickel—copper ore roasting plant of Zapoljarniy, which are also significant emitters of inorganic atmospheric pollutants. Groundwater chemistry mostly reflects the mineralogical composition of the gabbro aquifer in C2 and the Quaternary deposits in C5, although groundwater in C2 also shows signs of incipient contamination from surface waters (heavy metals, sulphate, chloride). Groundwater in C2 appears to have been acidified by S-compounds emitted from Monchegorsk, but the groundwater's capacity to neutralise incoming acidity has not been exhausted. In C5, groundwater has not been acidified to any extent and has a high acid neutralising capacity. This study demonstrates that the geological substrate of a catchment is a fundamental control on how groundwater responds to atmospheric pollution, even if the latter is severe.

  5. Rapid-extraction oxidation process to recover and reuse copper chromium and arsenic from industrial wood preservative sludge.

    PubMed

    Kazi, F K M; Cooper, P A

    2002-01-01

    Chromated copper arsenate (CCA) wood preservative can form insoluble sludges when the hexavalent chromium component is reduced by wood extractives, wood particles and preservative additives in the solution. This sludge accumulates in treating solution work tanks, sumps and in-line filters and must be disposed of as hazardous wastes by waste disposal companies at high costs. A number of commercial sludges were investigated and found to contain 18-94% copper, chromium and arsenic as oxides combined with sand, oil, wood particles, additives and wood extractives. We have developed a multi-stage recycling process whereby approximately 97% of the CCA components are recovered from the sludge. It involves extraction with sodium hypochlorite to remove and oxidize chromium (more than 90%) and extract most of the arsenic (approx. 80%) followed by extraction of the copper and remaining arsenic and chromium with phosphoric acid. The phosphoric acid extract contains some trivalent chromium, which is subsequently oxidized by sodium hypochlorite. The combined oxidized extract containing CrVI, CuII and AsV was compatible with CCA treating solutions and could be re-used commercially for treating wood without having a significant effect on the preservative fixation rate or the leach resistance of the treated wood. A cost analysis showed that the economic savings from recovery of CCA chemicals and reduced landfill costs exceeded the variable costs for materials and energy for the process by as much as Can $966 per tonne of sludge if sodium sulfite can be acquired in bulk quantities for the process. PMID:11952176

  6. Influence of alloying elements on friction and wear of copper

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1972-01-01

    The friction and wear characteristics were determined for copper binary alloys containing 10 atomic percent aluminum, silicon, indium, and tin. A ternary alloy containing 10 atomic percent aluminum and 5 atomic percent silicon was also examined. The effectiveness of each of the alloying elements aluminum and silicon were very effective in reducing friction. Silicon, however, also reduced wear appreciably. With lubrication, silicon, indium, and tin were all effective alloying elements in reducing friction and wear from values obtained for copper. Silicon was the most effective single element in reducing friction and wear in dry sliding and with lubrication.

  7. Utilizing an earthworm bioassay (Eisenia andrei) to assess a South African soil screening value with regards to effects from a copper manufacturing industry.

    PubMed

    Maboeta, Mark; Fouché, Tanya

    2014-09-01

    Metal contamination of soil due to industrialization has become an increasingly important problem in South Africa. This study aimed to investigate the potential impact of a copper (CuSO4·5H2O) production company on the soil environment. Bioassays using Eisenia andrei were performed to assess changes in biomass, reproduction and a biomarker, neutral red retention time, over a 28 day period. Earthworms exposed to soils from the Cu production site differed significantly (p < 0.05) from those exposed to soils 500 m and 5 km away in terms of the measured endpoints. These findings are consistent with the results from the chemical analysis which showed an elevated soil Cu content for both sites closest to the chemical production company compared to the reference site. The results confirm the importance and predictive value of using bioassays in conjunction with chemical analysis during soil quality assessments.

  8. Macrophage solubilization and cytotoxicity of indium-containing particles in vitro.

    PubMed

    Gwinn, William M; Qu, Wei; Shines, Cassandra J; Bousquet, Ronald W; Taylor, Genie J; Waalkes, Michael P; Morgan, Daniel L

    2013-10-01

    Indium-containing particles (ICPs) are used extensively in the microelectronics industry. Pulmonary toxicity is observed after inhalation exposure to ICPs; however, the mechanism(s) of pathogenesis is unclear. ICPs are insoluble at physiological pH and are initially engulfed by alveolar macrophages (and likely airway epithelial cells). We hypothesized that uptake of ICPs by macrophages followed by phagolysosomal acidification results in the solubilization of ICPs into cytotoxic indium ions. To address this, we characterized the in vitro cytotoxicity of indium phosphide (InP) or indium tin oxide (ITO) particles with macrophages (RAW cells) and lung-derived epithelial (LA-4) cells at 24h using metabolic (3-(4,5-dimethylthiazolyl-2)-2,5-diphenyltetrazolium bromide) and membrane integrity (lactate dehydrogenase) assays. InP and ITO were readily phagocytosed by RAW and LA-4 cells; however, the particles were much more cytotoxic to RAW cells and cytotoxicity was dose dependent. Treatment of RAW cells with cytochalasin D (CytoD) blocked particle phagocytosis and reduced cytotoxicity. Treatment of RAW cells with bafilomycin A1, a specific inhibitor of phagolysosomal acidification, also reduced cytotoxicity but did not block particle uptake. Based on direct indium measurements, the concentration of ionic indium was increased in culture medium from RAW but not LA-4 cells following 24-h treatment with particles. Ionic indium derived from RAW cells was significantly reduced by treatment with CytoD. These data implicate macrophage uptake and solubilization of InP and ITO via phagolysosomal acidification as requisite for particle-induced cytotoxicity and the release of indium ions. This may apply to other ICPs and strongly supports the notion that ICPs require solubilization in order to be toxic.

  9. Process for Patterning Indium for Bump Bonding

    NASA Technical Reports Server (NTRS)

    Denis, Kevin

    2012-01-01

    An innovation was created for the Cosmology Large Angular Scale Surveyor for integration of low-temperature detector chips with a silicon backshort and a silicon photonic choke through flipchip bonding. Indium bumps are typically patterned using liftoff processes, which require thick resist. In some applications, it is necessary to locate the bumps close to high-aspect-ratio structures such as wafer through-holes. In those cases, liftoff processes are challenging, and require complicated and time-consuming spray coating technology if the high-aspect-ratio structures are delineated prior to the indium bump process. Alternatively, processing the indium bumps first is limited by compatibility of the indium with subsequent processing. The present invention allows for locating bumps arbitrarily close to multiple-level high-aspect-ratio structures, and for indium bumps to be formed without liftoff resist. The process uses the poor step coverage of indium deposited on a silicon wafer that has been previously etched to delineate the location of the indium bumps. The silicon pattern can be processed through standard lithography prior to adding the high-aspect-ratio structures. Typically, high-aspectratio structures require a thick resist layer so this layer can easily cover the silicon topography. For multiple levels of topography, the silicon can be easily conformally coated through standard processes. A blanket layer of indium is then deposited onto the full wafer; bump bonding only occurs at the high points of the topography.

  10. Recycling of indium from CIGS photovoltaic cells: potential of combining acid-resistant nanofiltration with liquid-liquid extraction.

    PubMed

    Zimmermann, Yannick-Serge; Niewersch, Claudia; Lenz, Markus; Kül, Zöhre Zohra; Corvini, Philippe F-X; Schäffer, Andreas; Wintgens, Thomas

    2014-11-18

    Electronic consumer products such as smartphones, TV, computers, light-emitting diodes, and photovoltaic cells crucially depend on metals and metalloids. So-called "urban mining" considers them as secondary resources since they may contain precious elements at concentrations many times higher than their primary ores. Indium is of foremost interest being widely used, expensive, scarce and prone to supply risk. This study first investigated the capability of different nanofiltration membranes of extracting indium from copper-indium-gallium- selenide photovoltaic cell (CIGS) leachates under low pH conditions and low transmembrane pressure differences (<3 bar). Retentates were then subjected to a further selective liquid-liquid extraction (LLE). Even at very acidic pH indium was retained to >98% by nanofiltration, separating it from parts of the Ag, Sb, Se, and Zn present. LLE using di-(2-ethylhexyl)phosphoric acid (D2EHPA) extracted 97% of the indium from the retentates, separating it from all other elements except for Mo, Al, and Sn. Overall, 95% (2.4 g m(-2) CIGS) of the indium could be extracted to the D2EHPA phase. Simultaneously, by nanofiltration the consumption of D2EHPA was reduced by >60% due to the metal concentration in the reduced retentate volume. These results show clearly the potential for efficient scarce metal recovery from secondary resources. Furthermore, since nanofiltration was applicable at very low pH (≥ 0.6), it may be applied in hydrometallurgy typically using acidic conditions.

  11. Ionization levels of doped copper indium sulfide chalcopyrites.

    PubMed

    Tablero, C

    2012-02-01

    The electronic structure of modified chalcopyrite CuInS(2) has been analyzed from first principles within the density functional theory. The host chalcopyrite has been modified by introducing atomic impurities M at substitutional sites in the lattice host with M = C, Si, Ge, Sn, Ti, V, Cr, Fe, Co, Ni, Rh, and Ir. Both substitutions M for In and M for Cu have been analyzed. The gap and ionization energies are obtained as a function of the M-S displacements. It is interesting for both spintronic and optoelectronic applications because it can provide significant information with respect to the pressure effect and the nonradiative recombination. PMID:22239718

  12. Reactive sputtered copper indium diselenide films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Thornton, J. A.; Cornog, D. G.; Hall, R. B.; Shea, S. P.; Meakin, J. D.

    1984-06-01

    Single phase chalcopyrite CuInSe2 coatings have been deposited by reactive cosputtering from Cu and In planar magnetron sources operated in an Ar + H2Se working gas. Effective sputtering yields from the conditioned Cu and In targets were approximately 0.7 and 0.5 atoms/unit charge, respectively. Sputtering rate, H2Se injection rate, and H2Se and H2 partial pressure measurements were consistent with the overall reaction Cu + In + 2H2SE yields CuInSe2 + 2H2. The formation of near-stoichiometric coatings appears to be aided at elevated temperatures by a reemission mechanism which removes excess In. Photovoltaic devices formed by evaporating CdS onto the sputtered CuInSe2 yielded short circuit currents of about 33 mA/sq cm and efficiencies of about 4 percent.

  13. Optical characterization of copper indium gallium diselenide thin films

    NASA Astrophysics Data System (ADS)

    Hebert, Damon

    Cu(In,Ga)Se2 (CIGS) and its alloys are the leading choice for thin film photovoltaic absorber layers due to their high performance in devices, low degradation, high optical absorption coefficient and high tolerance to off-stoichiometry and intrinsic defects. Film conductivity and recombination losses are controlled by intrinsic point defect concentrations, especially in the near-surface space-charge region of the heterojunction. Despite the amount of research already performed on CIGS alloys, their optoelectronic properties, defect chemistry and recombination mechanisms are still poorly understood. The focus of this dissertation is to optically characterize a selection of CIGS absorber layers fabricated by various techniques in order to better understand the radiative emission and defect physics. This work aims to identify the defects responsible for recombination and their relation to grain boundaries and band edge fluctuations, which limit device performance. This study used photoluminescence (PL) spectroscopy, photoluminescence excitation (PLE) spectroscopy, and cathodoluminescence (CL) to study radiative emissions from a variety of Cu-poor CIGS thin films. Three general types of CIGS films were analyzed. Polycrystalline layers deposited on Mo-coated soda lime glass, polycrystalline layers deposited on metal foil, and epitaxial films grown on (100) and (111) GaAs were analyzed in this work. This work concludes that the donor-acceptor pair recombination model used in most interpretations of CIGS emission should be replaced with a model that accounts for high compensation and band edge fluctuations, which is shown to be undoubtedly the case in Cu-poor CIGS. Within this model, the most commonly observed emissions were explained as free-to-bound types, specifically iii band-to-impurity (BI) and tail-to-impurity (TI) types. Band tail width was measured by PLE. A correlation was established between band tail width and device efficiency. CIGS absorber layers that produced devices of higher performance showed narrower band tails. CL and PL showed an additional deep emission in Na-free films, not present in Na-containing films grown in parallel. It is concluded that most grain boundaries in CIGS act as collection areas for point defects and point defect clusters but also are more or less inactive with respect to recombination due to their built-in electrostatic hole barrier. Spectral and spatial emission characteristics were studied on plan-view CIGS surfaces that were covered with a ˜50 nm thick CdS film by chemical bath deposition (CBD). It is concluded that spectral changes that others have observed in the emission of CdS-treated films is a result of the CBD process itself and not the resulting film or the formation of the heterojunction. The effect of low temperature (˜180°C) air annealing on the emission characteristics of CdS/CIGS thin films was studied by cryogenic infrared and visible PL. Spectral shape was not significantly affected by annealing for either film, but PL intensity did show some dependence on anneal time for both films, which led to an estimate of an optimal time window of 3-10 hours for low temperature annealing.

  14. High efficiency thin film copper indium diselenide solar cell

    NASA Astrophysics Data System (ADS)

    Shah, Nitinkumar Maheshchandra

    The rapidly expanding oil sands of western Canada, the third largest reserves in the world, are creating serious challenges, such as ecological harm, labour shortages, and extensive natural gas consumption. This thesis develops three practical real options models to evaluate the feasibility of oil sands projects and to estimate the optimal rate of oil sands expansion, while accounting for the stated concerns. (Abstract shortened by UMI.).

  15. Field trials to assess the use of iron-bearing industrial by-products for stabilisation of chromated copper arsenate-contaminated soil.

    PubMed

    Lidelöw, Sofia; Ragnvaldsson, Daniel; Leffler, Per; Tesfalidet, Solomon; Maurice, Christian

    2007-11-15

    Two industrial by-products with high iron contents were tested for their effectiveness in the stabilisation of arsenic and trace metals in chromated copper arsenate (CCA)-contaminated soil. Steel abrasive (SA; 97% Fe(0)) and oxygen scarfing granulate (OSG; 69% Fe(3)O(4)) were applied at levels of 1% and 8% (w/w) respectively to two soils with different organic matter contents. Field lysimeter measurements indicated that SA and OSG treatments decreased the arsenic concentration in pore water by 68% and 92%, respectively, for the soil with low organic matter content, and by about 30% in pore water of soil with high organic matter content. At pH < or =6, the amended soil with low organic content contained elevated levels of manganese and nickel in their pore water, which were sufficient to induce cytotoxic effects in L-929 mouse fibroblast cells. The industrial by-products have significant potential for soil amendment at field-scale, but caution is required because of the potential release of their chemical contaminants and their reduced capacity for sorption of arsenic in organic-rich soils. PMID:17804040

  16. Field trials to assess the use of iron-bearing industrial by-products for stabilisation of chromated copper arsenate-contaminated soil.

    PubMed

    Lidelöw, Sofia; Ragnvaldsson, Daniel; Leffler, Per; Tesfalidet, Solomon; Maurice, Christian

    2007-11-15

    Two industrial by-products with high iron contents were tested for their effectiveness in the stabilisation of arsenic and trace metals in chromated copper arsenate (CCA)-contaminated soil. Steel abrasive (SA; 97% Fe(0)) and oxygen scarfing granulate (OSG; 69% Fe(3)O(4)) were applied at levels of 1% and 8% (w/w) respectively to two soils with different organic matter contents. Field lysimeter measurements indicated that SA and OSG treatments decreased the arsenic concentration in pore water by 68% and 92%, respectively, for the soil with low organic matter content, and by about 30% in pore water of soil with high organic matter content. At pH < or =6, the amended soil with low organic content contained elevated levels of manganese and nickel in their pore water, which were sufficient to induce cytotoxic effects in L-929 mouse fibroblast cells. The industrial by-products have significant potential for soil amendment at field-scale, but caution is required because of the potential release of their chemical contaminants and their reduced capacity for sorption of arsenic in organic-rich soils.

  17. Immune stimulation following dermal exposure to unsintered indium tin oxide.

    PubMed

    Brock, Kristie; Anderson, Stacey E; Lukomska, Ewa; Long, Carrie; Anderson, Katie; Marshall, Nikki; Meade, B Jean

    2014-01-01

    In recent years, several types of pulmonary pathology, including alveolar proteinosis, fibrosis, and emphysema, have been reported in workers in the indium industry. To date, there remains no clear understanding of the underlying mechanism(s). Pulmonary toxicity studies in rats and mice have demonstrated the development of mediastinal lymph node hyperplasia and granulomas of mediastinal lymph nodes and bronchus-associated lymphoid tissues following exposure to indium tin oxide. Given the association between exposure to other metals and the development of immune-mediated diseases, these studies were undertaken to begin to investigate the immuno-modulatory potential of unsintered indium tin oxide (uITO) in a mouse model. Using modifications of the local lymph node assay, BALB/c mice (five animals/group) were exposed topically via intact or breached skin or injected intradermally at the base of the ear pinnae with either vehicle or increasing concentrations 2.5-10% uITO (90:10 indium oxide/tin oxide, particle size <50 nm). Dose-responsive increases in lymphocyte proliferation were observed with a calculated EC3 of 4.7% for the intact skin study. Phenotypic analysis of draining lymph node cells following intradermal injection with 5% uITO yielded a profile consistent with a T-cell-mediated response. These studies demonstrate the potential for uITO to induce sensitization and using lymphocyte proliferation as a biomarker of exposure, and demonstrate the potential for uITO to penetrate both intact and breached skin.

  18. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  19. Indium Antimonide Nanowires: Synthesis and Properties.

    PubMed

    Shafa, Muhammad; Akbar, Sadaf; Gao, Lei; Fakhar-E-Alam, Muhammad; Wang, Zhiming M

    2016-12-01

    This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs-Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.

  20. Indium Antimonide Nanowires: Synthesis and Properties

    NASA Astrophysics Data System (ADS)

    Shafa, Muhammad; Akbar, Sadaf; Gao, Lei; Fakhar-e-Alam, Muhammad; Wang, Zhiming M.

    2016-03-01

    This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs-Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.

  1. Fractionation of elements during copper smelting

    SciTech Connect

    Germani, M.S.; Zoller, W.H.; Small, M.; Moyers, J.L.

    1981-03-01

    A recent study of the elemental composition of particulate material collected from the plumes of five copper smelters in southeastern Arizona indicated that arsenic, lead, selenium, cadmium, zinc, tungsten, indium, and other chalcophilic elements are highly enriched in the plume materials relative to the background aerosol. Enrichments are due to the volatilization of these elements during copper smelting. Significant differences in the elemental compositions of plumes from the various smelters appear to be due to differences in the feed material, smelting conditions, and equipment use by the smelters. (3 graphs, 13 references, 7 tables)

  2. Distribution of indium ions in indium substituted Mn-Zn ferrites

    NASA Astrophysics Data System (ADS)

    Rao, K. H.; Mendiratta, R. G.

    1983-04-01

    The variations in dc resistivity and Mossbauer line intensities for various dopant concentrations of indium in a manganese-zinc ferrite have been investigated to analyze the site occupancy of indium ions. The indium ions are observed to occupy both tetrahedral and octahedral sites throughout the whole range of concentration studied. The picture proposed on the basis of resistivity measurements has been confirmed by Mossbauer data.

  3. Industry

    SciTech Connect

    Bernstein, Lenny; Roy, Joyashree; Delhotal, K. Casey; Harnisch, Jochen; Matsuhashi, Ryuji; Price, Lynn; Tanaka, Kanako; Worrell, Ernst; Yamba, Francis; Fengqi, Zhou; de la Rue du Can, Stephane; Gielen, Dolf; Joosen, Suzanne; Konar, Manaswita; Matysek, Anna; Miner, Reid; Okazaki, Teruo; Sanders, Johan; Sheinbaum Parado, Claudia

    2007-12-01

    This chapter addresses past, ongoing, and short (to 2010) and medium-term (to 2030) future actions that can be taken to mitigate GHG emissions from the manufacturing and process industries. Globally, and in most countries, CO{sub 2} accounts for more than 90% of CO{sub 2}-eq GHG emissions from the industrial sector (Price et al., 2006; US EPA, 2006b). These CO{sub 2} emissions arise from three sources: (1) the use of fossil fuels for energy, either directly by industry for heat and power generation or indirectly in the generation of purchased electricity and steam; (2) non-energy uses of fossil fuels in chemical processing and metal smelting; and (3) non-fossil fuel sources, for example cement and lime manufacture. Industrial processes also emit other GHGs, e.g.: (1) Nitrous oxide (N{sub 2}O) is emitted as a byproduct of adipic acid, nitric acid and caprolactam production; (2) HFC-23 is emitted as a byproduct of HCFC-22 production, a refrigerant, and also used in fluoroplastics manufacture; (3) Perfluorocarbons (PFCs) are emitted as byproducts of aluminium smelting and in semiconductor manufacture; (4) Sulphur hexafluoride (SF{sub 6}) is emitted in the manufacture, use and, decommissioning of gas insulated electrical switchgear, during the production of flat screen panels and semiconductors, from magnesium die casting and other industrial applications; (5) Methane (CH{sub 4}) is emitted as a byproduct of some chemical processes; and (6) CH{sub 4} and N{sub 2}O can be emitted by food industry waste streams. Many GHG emission mitigation options have been developed for the industrial sector. They fall into three categories: operating procedures, sector-wide technologies and process-specific technologies. A sampling of these options is discussed in Sections 7.2-7.4. The short- and medium-term potential for and cost of all classes of options are discussed in Section 7.5, barriers to the application of these options are addressed in Section 7.6 and the implication of

  4. Adsorption of copper(II) by ``waste`` Fe(III)/Cr(III) hydroxide from aqueous solution and radiator manufacturing industry wastewater

    SciTech Connect

    Namasivayam, C.; Senthilkumar, S.

    1999-01-01

    Waste Fe(III)/Cr(III) hydroxide has been used as an adsorbent for the effective removal of copper from aqueous solution. The parameters studied include agitation time, Cu(II) concentration, adsorbent dose, temperature, and pH. The percent adsorption of Cu(II) increased with a decrease in the concentration of Cu(II) and an increase in temperature. Quantitative removal of Cu(II) by 50 mg/50 mL adsorbent was observed at pH 5.0 for a Cu(II) concentration of 40 mg/L. The equilibrium data fit well with the Langmuir isotherm. The adsorption capacity (Q{sub 0}) calculated from the Langmuir isotherm was 92.59 mg/g at an initial pH of 5.0 at 32 C. Desorption of Cu(II) from a Cu(II)-loaded adsorbent was 55.4% at pH 3.0. Application of the adsorbent for the removal of Cu(II) was successfully demonstrated using radiator manufacturing industry wastewater.

  5. Copper transport.

    PubMed

    Linder, M C; Wooten, L; Cerveza, P; Cotton, S; Shulze, R; Lomeli, N

    1998-05-01

    In adult humans, the net absorption of dietary copper is approximately 1 mg/d. Dietary copper joins some 4-5 mg of endogenous copper flowing into the gastrointestinal tract through various digestive juices. Most of this copper returns to the circulation and to the tissues (including liver) that formed them. Much lower amounts of copper flow into and out of other major parts of the body (including heart, skeletal muscle, and brain). Newly absorbed copper is transported to body tissues in two phases, borne primarily by plasma protein carriers (albumin, transcuprein, and ceruloplasmin). In the first phase, copper goes from the intestine to the liver and kidney; in the second phase, copper usually goes from the liver (and perhaps also the kidney) to other organs. Ceruloplasmin plays a role in this second phase. Alternatively, liver copper can also exit via the bile, and in a form that is less easily reabsorbed. Copper is also present in and transported by other body fluids, including those bathing the brain and central nervous system and surrounding the fetus in the amniotic sac. Ceruloplasmin is present in these fluids and may also be involved in copper transport there. The concentrations of copper and ceruloplasmin in milk vary with lactational stage. Parallel changes occur in ceruloplasmin messenger RNA expression in the mammary gland (as determined in pigs). Copper in milk ceruloplasmin appears to be particularly available for absorption, at least in rats. PMID:9587137

  6. Copper transport.

    PubMed

    Linder, M C; Wooten, L; Cerveza, P; Cotton, S; Shulze, R; Lomeli, N

    1998-05-01

    In adult humans, the net absorption of dietary copper is approximately 1 mg/d. Dietary copper joins some 4-5 mg of endogenous copper flowing into the gastrointestinal tract through various digestive juices. Most of this copper returns to the circulation and to the tissues (including liver) that formed them. Much lower amounts of copper flow into and out of other major parts of the body (including heart, skeletal muscle, and brain). Newly absorbed copper is transported to body tissues in two phases, borne primarily by plasma protein carriers (albumin, transcuprein, and ceruloplasmin). In the first phase, copper goes from the intestine to the liver and kidney; in the second phase, copper usually goes from the liver (and perhaps also the kidney) to other organs. Ceruloplasmin plays a role in this second phase. Alternatively, liver copper can also exit via the bile, and in a form that is less easily reabsorbed. Copper is also present in and transported by other body fluids, including those bathing the brain and central nervous system and surrounding the fetus in the amniotic sac. Ceruloplasmin is present in these fluids and may also be involved in copper transport there. The concentrations of copper and ceruloplasmin in milk vary with lactational stage. Parallel changes occur in ceruloplasmin messenger RNA expression in the mammary gland (as determined in pigs). Copper in milk ceruloplasmin appears to be particularly available for absorption, at least in rats.

  7. Mineral resource of the month: indium

    USGS Publications Warehouse

    Tolcin, Amy C.

    2011-01-01

    Geologically, the occurrence of indium minerals is rare. The element most often occurs as a sulfide inclusion or substitutes in other base-metal minerals, including cassiterite, chalcopyrite, sphalerite and stannite. Indium’s abundance in the crust is estimated to be 0.05 parts per million, which makes it more abundant than silver, but it is so widely disseminated that it does not occur in high enough concentrations to form mineable deposits. Therefore, indium is most often recovered from byproduct residues produced during the refining of lead and zinc. But only about one-quarter of the indium mined worldwide is refined into metal, as many indium-bearing concentrates are sent to refineries that do not have the capability of recovering the metal.

  8. Indium Single-Ion Frequency Standard

    NASA Technical Reports Server (NTRS)

    Nagourney, Warren

    2001-01-01

    A single laser-cooled indium ion is a promising candidate for an ultimate resolution optical time or frequency standard. It can be shown that single ions from group IIIA of the periodic table (indium, thallium, etc.) can have extremely small systematic errors. In addition to being free from Doppler, transit-time and collisional shifts, these ions are also quite insensitive to perturbations from ambient magnetic and electric fields (mainly due to the use of a J=0-0 transition for spectroscopy). Of all group IIIA ions, indium seems to be the most practical, since it is heavy enough to have a tolerable intercombination cooling transition rate and (unlike thallium) has transitions which are easily accessible with frequency multiplied continuous-wave lasers. A single indium ion standard has a potential inaccuracy of one part in 10(exp 18) for integration times of 10(exp 6) seconds. We have made substantial progress during the grant period in constructing a frequency standard based upon a single indium ion. At the beginning of the grant period, single indium ions were being successfully trapped, but the lasers and optical systems were inadequate to achieve the desired goal. We have considerably improved the stability of the dye laser used to cool the ions and locked it to a molecular resonance line, making it possible to observe stable cooling-line fluorescence from a single indium ion for reasonable periods of time, as required by the demands of precision spectroscopy. We have substantially improved the single-ion fluorescence signal with significant benefits for the detection efficiency of forbidden transitions using the 'shelving' technique. Finally, we have constructed a compact, efficient UV 'clock' laser and observed 'clock' transitions in single indium ions using this laser system. We will elaborate on these accomplishments.

  9. Pressure-induced decomposition of indium hydroxide.

    PubMed

    Gurlo, Aleksander; Dzivenko, Dmytro; Andrade, Miria; Riedel, Ralf; Lauterbach, Stefan; Kleebe, Hans-Joachim

    2010-09-15

    A static pressure-induced decomposition of indium hydroxide into metallic indium that takes place at ambient temperature is reported. The lattice parameter of c-In(OH)(3) decreased upon compression from 7.977(2) to approximately 7.45 A at 34 GPa, corresponding to a decrease in specific volume of approximately 18%. Fitting the second-order Birch-Murnaghan equation of state to the obtained compression data gave a bulk modulus of 99 +/- 3 GPa for c-In(OH)(3). The c-In(OH)(3) crystals with a size of approximately 100 nm are comminuted upon compression, as indicated by the grain-size reduction reflected in broadening of the diffraction reflections and the appearance of smaller (approximately 5 nm) incoherently oriented domains in TEM. The rapid decompression of compressed c-In(OH)(3) leads to partial decomposition of indium hydroxide into metallic indium, mainly as a result of localized stress gradients caused by relaxation of the highly disordered indium sublattice in indium hydroxide. This partial decomposition of indium hydroxide into metallic indium is irreversible, as confirmed by angle-dispersive X-ray diffraction, transmission electron microscopy imaging, Raman scattering, and FTIR spectroscopy. Recovered c-In(OH)(3) samples become completely black and nontransparent and show typical features of metals, i.e., a falling absorption in the 100-250 cm(-1) region accompanied by a featureless spectrum in the 250-2500 cm(-1) region in the Raman spectrum and Drude-like absorption of free electrons in the region of 4000-8000 cm(-1) in the FTIR spectrum. These features were not observed in the initial c-In(OH)(3), which is a typical white wide-band-gap semiconductor.

  10. Production of ultrahigh purity copper using waste copper nitrate solution.

    PubMed

    Choi, J Y; Kim, D S

    2003-04-25

    The production of ultrahigh purity copper (99.9999%) by electrolysis in the presence of a cementation barrier has been attempted employing a waste nitric copper etching solution as the electrolyte. The amount of copper deposited on the cathode increased almost linearly with electrolysis time and the purity of copper was observed to increase as the electrolyte concentration was increased. At some point, however, as the electrolyte concentration increased, the purity of copper decreased slightly. As the total surface area of cementation barrier increased, the purity of product increased. The electrolyte temperature should be maintained below 35 degrees C in the range of investigated electrolysis conditions to obtain the ultrahigh purity copper. Considering that several industrial waste solutions contain valuable metallic components the result of present study may support a claim that electrowinning is a very desirable process for their treatment and recovery. PMID:12719148

  11. Thermal conductance of pressed metallic contacts augmented with Indium foil or Apiezon-N (tm) grease at liquid helium temperatures

    NASA Technical Reports Server (NTRS)

    Salerno, Louis J.; Kittel, Peter; Spivak, Alan L.

    1993-01-01

    The thermal conductance of pressed contacts which have been augmented with Indium foil or Apiezon-N (tm) grease was measured over the temperature range of 1.6 to 6.0 K, with applied forces from 22 N to 670 N. The sample pairs were fabricated from OFHC copper, 6061-T6 aluminum, free-machining brass, and 304 stainless steel. Although the thermal conductance was found to increase with increasing applied contact force, the force dependence was less than in earlier work. The addition of Indium foil or Apiezon-NT grease between the contact surfaces resulted in an improvement over uncoated surfaces ranging from a factor of approximately 3 for stainless steel to an order of magnitude for copper contacts.

  12. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... secondary indium subcategory. 421.190 Section 421.190 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary indium... indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal...

  13. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... secondary indium subcategory. 421.190 Section 421.190 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary indium... indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal...

  14. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... secondary indium subcategory. 421.190 Section 421.190 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary indium... indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal...

  15. Thermal Stability of Chelated Indium Activable Tracers

    SciTech Connect

    Chrysikopoulos, Costas; Kruger, Paul

    1986-01-21

    The thermal stability of indium tracer chelated with organic ligands ethylenediaminetetraacetic acid (EDTA) and nitrilotriacetic acid (NTA) was measured for reservoir temperatures of 150, 200, and 240 C. Measurements of the soluble indium concentration was made as a function of time by neutron activation analysis. From the data, approximate thermal decomposition rates were estimated. At 150 C, both chelated tracers were stable over the experimental period of 20 days. At 200 C, the InEDTA concentration remained constant for 16 days, after which the thermal decomposition occurred at a measured rate constant of k = 0.09 d{sup -1}. The thermal decomposition of InNTA at 200 C showed a first order reaction with a measured rate constant of k = 0.16 d{sup -1}. At 240 C, both indium chelated tracers showed rapid decomposition with rate constants greater than 1.8 d{sup -1}. The data indicate that for geothermal reservoir with temperatures up to about 200 C, indium chelated tracers can be used effectively for transit times of at least 20 days. These experiments were run without reservoir rock media, and do not account for concomitant loss of indium tracer by adsorption processes.

  16. Indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  17. Indium-111 leukocyte scanning and fracture healing

    SciTech Connect

    Mead, L.P.; Scott, A.C.; Bondurant, F.J.; Browner, B.D. )

    1990-01-01

    This study was undertaken to determine the specificity of indium-111 leukocyte scans for osteomyelitis when fractures are present. Midshaft tibial osteotomies were performed in 14 New Zealand white rabbits, seven of which were infected postoperatively with Staphylococcus aureus per Norden's protocol. All 14 rabbits were scanned following injection with 75 microCi of indium 111 at 72 h after osteotomy and at weekly intervals for 4 weeks. Before the rabbits were killed, the fracture sites were cultured to document the presence or absence of infection. The results of all infected osteotomy sites were positive, whereas no positive scans were found in the noninfected osteotomies. We concluded from this study that uncomplicated fracture healing does not result in a positive indium-111 leukocyte scan.

  18. Advantages and challenges of increased antimicrobial copper use and copper mining.

    PubMed

    Elguindi, Jutta; Hao, Xiuli; Lin, Yanbing; Alwathnani, Hend A; Wei, Gehong; Rensing, Christopher

    2011-07-01

    Copper is a highly utilized metal for electrical, automotive, household objects, and more recently as an effective antimicrobial surface. Copper-containing solutions applied to fruits and vegetables can prevent bacterial and fungal infections. Bacteria, such as Salmonellae and Cronobacter sakazakii, often found in food contamination, are rapidly killed on contact with copper alloys. The antimicrobial effectiveness of copper alloys in the healthcare environment against bacteria causing hospital-acquired infections such as methicillin-resistant Staphylococcus aureus (MRSA), Escherichia coli O157:H7, and Clostridium difficile has been described recently. The use of copper and copper-containing materials will continue to expand and may lead to an increase in copper mining and production. However, the copper mining and manufacturing industry and the consumer do not necessarily enjoy a favorable relationship. Open pit mining, copper mine tailings, leaching products, and deposits of toxic metals in the environment often raises concerns and sometimes public outrage. In addition, consumers may fear that copper alloys utilized as antimicrobial surfaces in food production will lead to copper toxicity in humans. Therefore, there is a need to mitigate some of the negative effects of increased copper use and copper mining. More thermo-tolerant, copper ion-resistant microorganisms could improve copper leaching and lessen copper groundwater contamination. Copper ion-resistant bacteria associated with plants might be useful in biostabilization and phytoremediation of copper-contaminated environments. In this review, recent progress in microbiological and biotechnological aspects of microorganisms in contact with copper will be presented and discussed, exploring their role in the improvement for the industries involved as well as providing better environmental outcomes.

  19. Transport in indium-decorated graphene

    NASA Astrophysics Data System (ADS)

    Chandni, U.; Henriksen, Erik A.; Eisenstein, J. P.

    2015-06-01

    The electronic-transport properties of single-layer graphene that has a dilute coating of indium adatoms have been investigated. Our studies establish that isolated indium atoms donate electrons to graphene and become a source of charged impurity scattering, affecting the conductivity as well as magnetotransport properties of the pristine graphene. Notably, a positive magnetoresistance is observed over a wide density range after In doping. The low-field magnetoresistance carries signatures of quantum interference effects which are significantly altered by the adatoms.

  20. Dispersion strengthened copper

    DOEpatents

    Sheinberg, Haskell; Meek, Thomas T.; Blake, Rodger D.

    1990-01-01

    A composition of matter comprised of copper and particles which are dispersed throughout the copper, where the particles are comprised of copper oxide and copper having a coating of copper oxide, and a method for making this composition of matter.

  1. Dispersion strengthened copper

    DOEpatents

    Sheinberg, Haskell; Meek, Thomas T.; Blake, Rodger D.

    1989-01-01

    A composition of matter comprised of copper and particles which are dispersed throughout the copper, where the particles are comprised of copper oxide and copper having a coating of copper oxide, and a method for making this composition of matter.

  2. Copper Metallochaperones

    PubMed Central

    Robinson, Nigel J.; Winge, Dennis R.

    2014-01-01

    The current state of knowledge on how copper metallochaperones support the maturation of cuproproteins is reviewed. Copper is needed within mitochondria to supply the CuA and intramembrane CuB sites of cytochrome oxidase, within the trans-Golgi network to supply secreted cuproproteins and within the cytosol to supply superoxide dismutase 1 (Sod1). Subpopulations of copper-zinc superoxide dismutase also localize to mitochondria, the secretory system, the nucleus and, in plants, the chloroplast, which also requires copper for plastocyanin. Prokaryotic cuproproteins are found in the cell membrane and in the periplasm of gram-negative bacteria. Cu(I) and Cu(II) form tight complexes with organic molecules and drive redox chemistry, which unrestrained would be destructive. Copper metallochaperones assist copper in reaching vital destinations without inflicting damage or becoming trapped in adventitious binding sites. Copper ions are specifically released from copper metallochaperones upon contact with their cognate cuproproteins and metal transfer is thought to proceed by ligand substitution. PMID:20205585

  3. Molecular beam epitaxy grown indium self-assembled plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Gibson, Ricky; Gehl, Michael; Sears, Jasmine; Zandbergen, Sander; Nader, Nima; Keiffer, Patrick; Hendrickson, Joshua; Arnoult, Alexandre; Khitrova, Galina

    2015-09-01

    We describe molecular beam epitaxy (MBE) growth conditions for self-assembled indium nanostructures, or islands, which allow for the tuning of the density and size of the indium nanostructures. How the plasmonic resonance of indium nanostructures is affected by the island density, size, distribution in sizes, and indium purity of the nanostructures is explored. These self-assembled nanostructures provide a platform for integration of resonant and non-resonant plasmonic structures within a few nm of quantum wells (QWs) or quantum dots (QDs) in a single process. A 4× increase in peak photoluminescence intensity is demonstrated for near-surface QDs resonantly coupled to indium nanostructures.

  4. Interstitial pulmonary disorders in indium-processing workers.

    PubMed

    Chonan, T; Taguchi, O; Omae, K

    2007-02-01

    The production of indium-tin oxide has increased, owing to the increased manufacture of liquid-crystal panels. It has been reported that interstitial pneumonia occurred in two indium-processing workers; therefore, the present study aimed to evaluate whether interstitial pulmonary disorders were prevalent among indium workers. The study was carried out in 108 male workers in the indium plant where the two interstitial pneumonia patients mentioned above were employed, and included high-resolution computed tomography (HRCT) of the lungs, pulmonary function tests and analysis of serum sialylated carbohydrate antigen KL-6 and the serum indium concentration. Significant interstitial changes were observed in 23 indium workers on HRCT and serum KL-6 was abnormally high (>500 U x mL(-1)) in 40 workers. Workers with serum indium concentrations in the highest quartile had significantly longer exposure periods, greater HRCT changes, lower diffusing capacity of the lung for carbon monoxide and higher KL-6 levels compared with those in the lowest quartile. The serum indium concentration was positively correlated with the KL-6 level and with the degree of HRCT changes. In conclusion, the results of the present study indicated that serum KL-6 and high-resolution computed tomography abnormalities were prevalent among indium workers and that these abnormalities increased with the indium burden, suggesting that inhaled indium could be a potential cause of occupational lung disease.

  5. Sinterless Formation Of Contacts On Indium Phosphide

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.

  6. Study of the doping of thermally evaporated zinc oxide thin films with indium and indium oxide

    NASA Astrophysics Data System (ADS)

    Palimar, Sowmya; Bangera, Kasturi V.; Shivakumar, G. K.

    2013-12-01

    The present paper reports observations made on investigations carried out to study structural, optical and electrical properties of thermally evaporated ZnO thin films and their modulations on doping with metallic indium and indium oxide separately. ZnO thin film in the undoped state is found to have a very good conductivity of 90 Ω-1 cm-1 with an excellent transmittance of up to 90 % in the visible region. After doping with metallic indium, the conductivity of the film is found to be 580 Ω-1 cm-1, whereas the conductivity of indium oxide-doped films is increased up to 3.5 × 103 Ω-1 cm-1. Further, the optical band gap of the ZnO thin film is widened from 3.26 to 3.3 eV when doped with indium oxide and with metallic indium it decreases to 3.2 eV. There is no considerable change in the transmittance of the films after doping. All undoped and doped films were amorphous in nature with smooth and flat surface without significant modifications due to doping.

  7. The oxidation and surface speciation of indium and indium oxides exposed to atmospheric oxidants

    NASA Astrophysics Data System (ADS)

    Detweiler, Zachary M.; Wulfsberg, Steven M.; Frith, Matthew G.; Bocarsly, Andrew B.; Bernasek, Steven L.

    2016-06-01

    Metallic indium and its oxides are useful in electronics applications, in transparent conducting electrodes, as well as in electrocatalytic applications. In order to understand more fully the speciation of the indium and oxygen composition of the indium surface exposed to atmospheric oxidants, XPS, HREELS, and TPD were used to study the indium surface exposed to water, oxygen, and carbon dioxide. Clean In and authentic samples of In2O3 and In(OH)3 were examined with XPS to provide standard spectra. Indium was exposed to O2 and H2O, and the ratio of O2 - to OH- in the O1s XPS region was used to monitor oxidation and speciation of the surface. HREELS and TPD indicate that water dissociates on the indium surface even at low temperature, and that In2O3 forms at higher temperatures. Initially, OH- is the major species at the surface. Pure In2O3 is also OH- terminated following water exposure. Ambient pressure XPS studies of water exposure to these surfaces suggest that high water pressures tend to passivate the surface, inhibiting extensive oxide formation.

  8. Gaseous Refining of Anode Copper

    NASA Astrophysics Data System (ADS)

    Goyal, Pradeep; Themelis, N. J.; Zanchuk, Walter A.

    1982-12-01

    The refining of blister copper prior to casting into anodes consists of oxidizing the copper melt to remove sulfur and then reducing its oxygen content. The age-old "wood poling" technique for deoxidation is gradually being replaced by the injection of reducing gases through one or two tuyeres. Thermodynamic and mass transfer analysis as well as laboratory tests have shown that the operating efficiency of gas injection can be improved considerably by enhancing mixing and gas-liquid mass transfer conditions within the copper bath. The injection of inert gas through porous plugs offers a viable industrial means for effecting such an improvement.

  9. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal raw... secondary indium subcategory. 421.190 Section 421.190 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary...

  10. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal raw... secondary indium subcategory. 421.190 Section 421.190 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary...

  11. Development of an Indium bump bond process for silicon pixel detectors at PSI

    NASA Astrophysics Data System (ADS)

    Broennimann, Ch.; Glaus, F.; Gobrecht, J.; Heising, S.; Horisberger, M.; Horisberger, R.; Kästli, H. C.; Lehmann, J.; Rohe, T.; Streuli, S.

    2006-09-01

    The hybrid pixel detectors used in the high-energy physics experiments currently under construction use a vertical connection technique, the so-called bump bonding. As the pitch below 100 μm, required in these applications, cannot be fulfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflowed indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector. The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflowed afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a second reflow is performed for self-alignment and obtaining high mechanical strength. For the placement of the chips a manual and an automatic machine were constructed. The former is very flexible in handling different chip and module geometries but has a limited throughput while the latter features a much higher grade of automatization and is therefore much more suited for producing hundreds of modules with a well-defined geometry. The reliability of this process was proven by the successful construction of the PILATUS detector. The construction of PILATUS 6M (60 modules) and the CMS pixel barrel (roughly 800 modules) has started in early 2006.

  12. Indium and indium tin oxide induce endoplasmic reticulum stress and oxidative stress in zebrafish (Danio rerio).

    PubMed

    Brun, Nadja Rebecca; Christen, Verena; Furrer, Gerhard; Fent, Karl

    2014-10-01

    Indium and indium tin oxide (ITO) are extensively used in electronic technologies. They may be introduced into the environment during production, use, and leaching from electronic devices at the end of their life. At present, surprisingly little is known about potential ecotoxicological implications of indium contamination. Here, molecular effects of indium nitrate (In(NO3)3) and ITO nanoparticles were investigated in vitro in zebrafish liver cells (ZFL) cells and in zebrafish embryos and novel insights into their molecular effects are provided. In(NO3)3 led to induction of endoplasmic reticulum (ER) stress response, induction of reactive oxygen species (ROS) and induction of transcripts of pro-apoptotic genes and TNF-α in vitro at a concentration of 247 μg/L. In(NO3)3 induced the ER stress key gene BiP at mRNA and protein level, as well as atf6, which ultimately led to induction of the important pro-apoptotic marker gene chop. The activity of In(NO3)3 on ER stress induction was much stronger than that of ITO, which is explained by differences in soluble free indium ion concentrations. The effect was also stronger in ZFL cells than in zebrafish embryos. Our study provides first evidence of ER stress and oxidative stress induction by In(NO3)3 and ITO indicating a critical toxicological profile that needs further investigation.

  13. Indium-111 autologous leukocyte imaging in pancreatitis

    SciTech Connect

    Anderson, J.R.; Spence, R.A.; Laird, J.D.; Ferguson, W.R.; Kennedy, T.L.

    1986-03-01

    Thirty-nine patients with acute pancreatitis have been assessed using a prognostic factor grading system, abdominal ultrasound, and autologous leukocyte imaging. Both prognostic factor grading and leukocyte imaging can accurately assess the severity of the disease early in its course. All patients with a negative indium-labeled leukocyte image recovered without sequelae, whereas five of the 12 patients with a positive image developed complications, including two deaths. Abdominal ultrasound is of no value in assessing severity, but is a useful method of detecting those patients with gallstone-associated disease. In patients with suspected abscess formation following acute pancreatitis, indium leukocyte imaging does not differentiate between fat necrosis and abscess formation. In this situation, computerized tomography should be carried out before laparotomy is undertaken.

  14. Electroplated indium bump arrays and the bonding reliability

    NASA Astrophysics Data System (ADS)

    Qiuping, Huang; Gaowei, Xu; Gang, Quan; Yuan, Yuan; Le, Luo

    2010-11-01

    A novel electroplating indium bumping process is described, as a result of which indium bump arrays with a pitch of 100 μm and a diameter of 40 μm were successfully prepared. UBM (under bump metallization) for indium bumping was investigated with an XRD technique. The experimental results indicate that Ti/Pt (300 Å / 200 Å) has an excellent barrier effect both at room temperature and at 200 °C. The bonding reliability of the indium bumps was evaluated by a shear test. Results show that the shear strength of the indium bump significantly increases after the first reflow and then changes slowly with increasing reflow times. Such a phenomenon may be caused by the change in textures of the indium after reflow. The corresponding flip-chip process is also discussed in this paper.

  15. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    SciTech Connect

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing; Roy, V. A. L.

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  16. The n-type conduction of indium-doped Cu2O thin films fabricated by direct current magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing; Roy, V. A. L.

    2015-08-01

    Indium-doped Cu2O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O2. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu2O, with no other phases detected. Indium atoms exist as In3+ in Cu2O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2-713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu2O and, therefore, lead to n-type conduction.

  17. The toxicology of indium tin oxide.

    PubMed

    Bomhard, Ernst M

    2016-07-01

    Indium tin oxide (ITO) is a technologically important semiconductor. An increasing number of cases of severe lung effects (characterized by pulmonary alveolar proteinosis and/or interstitial fibrosis) in ITO-exposed workers warrants a review of the toxicological hazards. Short- and long-term inhalation studies in rats and mice revealed persistent alveolar proteinosis, inflammation and fibrosis in the lungs down to concentrations as low as 0.01mg/m(3). In rats, the incidences of bronchiolo-alveolar adenomas and carcinomas were significantly increased at all concentrations. In mice, ITO was not carcinogenic. A few bronchiolo-alveolar adenomas occurring after repeated intratracheal instillation of ITO to hamsters have to be interpreted as treatment-related. In vitro and in vivo studies on the formation of reactive oxygen species suggest epigenetic effects as cause of the lung tumor development. Repeated intratracheal instillation of ITO to hamsters slightly affected the male sexual organs, which might be interpreted as a secondary effect of the lung damage. Epidemiological and medical surveillance studies, serum/blood indium levels in workers as well as data on the exposure to airborne indium concentrations indicate a need for measures to reduce exposure at ITO workplaces. PMID:27343753

  18. Method for vacuum baking indium in-situ

    NASA Astrophysics Data System (ADS)

    Adamski, J. A.

    1985-12-01

    This invention pertains to a method for producing highly pure indium for subsequent utilization as a reaction component in the synthesis of polycrystalline indium phosphide which includes the step of heating raw indium under vaccuum in an open ended quartz ampoule to a temperature in excess of 850 C, followed by the step of sealing the ampoule while simultaneously maintaining the vacuum in the interior of the ampoule.

  19. GEMAS: Concentrations and origin of indium in agricultural soil of Europe

    NASA Astrophysics Data System (ADS)

    Ladenberger, Anna; Sadeghi, Martiya; Demetriades, Alecos; Reimann, Clemens; Birke, Manfred; Andersson, Madelen; Jonsson, Erik

    2014-05-01

    Indium is classified as a critical metal, urgently needed in the electronics industry, especially for the production of solar panels and LCD screens. It is a volatile chalcophile rare element and its primary sources are different types of sulphide ore deposits. Although sphalerite is the main host mineral for indium, chalcopyrite-rich ores usually contain the highest contents of this element. Apart from common sulphides, higher indium concentrations can occur in cassiterite, wolframite and magnetite, in addition to few known indium minerals such as roquesite. Indium is a very rare element and its determination needs a technique with very low detection limits. Data for In are hardly ever provided in geochemical data sets due to its function as an internal standard when using the ICP-MS for analysis. Within the GEMAS project, over 4000 samples of agricultural (Ap) and grazing land (Gr) soil have been collected, and indium concentrations have been measured by ICP-MS in an aqua regia extraction. The median value of aqua regia extractable In in European soil is 0.0176 mg/kg in the Ap and 0.0177 mg/kg in the Gr samples. The most striking pattern on an In distribution map of Europe in an aqua regia extraction is the large difference between northern (low - median 0.012 mg/kg In in the Ap samples) and southern Europe (high - median 0.021 mg/kg In in the Ap samples). The boundary between predominantly high and low concentrations follows exactly the southernmost limit of the last glaciation. In southern Scandinavia, clay-rich soil is indicated by In anomalies, as is the Oslo Rift and the old silver mine at Kongsberg (Norway). Generally, distinct In anomalies mark many of the famous old mining areas of the continent, typically those featuring relatively young hydrothermal deposits (northern Portugal, Iberian Pyrite Belt, Cornwall in the UK, Harz in Germany and Erzgebirge at the German/Czech border), and granitic intrusions (probably related to associated Sn and skarn

  20. Bacterial stimulation of copper phytoaccumulation by bioaugmentation with rhizosphere bacteria.

    PubMed

    Andreazza, Robson; Okeke, Benedict C; Lambais, Márcio Rodrigues; Bortolon, Leandro; de Melo, George Wellington Bastos; Camargo, Flávio Anastácio de Oliveira

    2010-11-01

    Copper contaminated areas pose environmental health risk to living organisms. Remediation processes are thus required for both crop production and industrial activities. This study employed bioaugmentation with copper resistant bacteria to improve phytoremediation of vineyard soils and copper mining waste contaminated with high copper concentrations. Oatmeal plant (Avena sativa L.) was used for copper phytoextraction. Three copper resistant bacterial isolates from oatmeal rhizosphere (Pseudomonas putida A1; Stenotrophomonas maltophilia A2 and Acinetobacter calcoaceticus A6) were used for the stimulation of copper phytoextraction. Two long-term copper contaminated vineyard soils (Mollisol and Inceptisol) and copper mining waste from Southern Brazil were evaluated. Oatmeal plants substantially extracted copper from vineyard soils and copper mining waste. As much as 1549 mg of Cu kg⁻¹ dry mass was extracted from plants grown in Inceptisol soil. The vineyard Mollisol copper uptake (55 mg Cu kg⁻¹ of dry mass) in the shoots was significantly improved upon inoculation of oatmeal plants with isolate A2 (128 mg of Cu kg⁻¹ of shoot dry mass). Overall oatmeal plant biomass displayed higher potential of copper phytoextraction with inoculation of rhizosphere bacteria in vineyard soil to the extent that 404 and 327 g ha⁻¹ of copper removal were respectively observed in vineyard Mollisol bioaugmented with isolate A2 (S. maltophilia) and isolate A6 (A. calcoaceticus). Results suggest potential application of bacterial stimulation of phytoaccumulation of copper for biological removal of copper from contaminated areas.

  1. A multi-step solvent-free mechanochemical route to indium(iii) complexes.

    PubMed

    Wang, Jingyi; Ganguly, Rakesh; Yongxin, Li; Díaz, Jesus; Soo, Han Sen; García, Felipe

    2016-05-10

    Mechanochemistry is well-established in the solid-phase synthesis of inorganic materials but has rarely been employed for molecular syntheses. In recent years, there has been nascent interest in 'greener' synthetic methods with less solvent, higher yields, and shorter reaction times being especially appealing to the fine chemicals and inorganic catalyst industries. Herein, we demonstrate that main-group indium(iii) complexes featuring bis(imino)acenaphthene (BIAN) ligands are readily accessible through a mechanochemical milling approach. The synthetic methodology reported herein not only bypasses the use of large solvent quantities and transition metal reagents for ligand synthesis, but also reduces reaction times dramatically. These new main-group complexes exhibit the potential to be reduced to indium(i) compounds, which may be employed as photosensitizers in organic catalyses and functional materials. PMID:27112317

  2. A multi-step solvent-free mechanochemical route to indium(iii) complexes.

    PubMed

    Wang, Jingyi; Ganguly, Rakesh; Yongxin, Li; Díaz, Jesus; Soo, Han Sen; García, Felipe

    2016-05-10

    Mechanochemistry is well-established in the solid-phase synthesis of inorganic materials but has rarely been employed for molecular syntheses. In recent years, there has been nascent interest in 'greener' synthetic methods with less solvent, higher yields, and shorter reaction times being especially appealing to the fine chemicals and inorganic catalyst industries. Herein, we demonstrate that main-group indium(iii) complexes featuring bis(imino)acenaphthene (BIAN) ligands are readily accessible through a mechanochemical milling approach. The synthetic methodology reported herein not only bypasses the use of large solvent quantities and transition metal reagents for ligand synthesis, but also reduces reaction times dramatically. These new main-group complexes exhibit the potential to be reduced to indium(i) compounds, which may be employed as photosensitizers in organic catalyses and functional materials.

  3. Method to Improve Indium Bump Bonding via Indium Oxide Removal Using a Multi-Step Plasma Process

    NASA Technical Reports Server (NTRS)

    Greer, H. Frank (Inventor); Jones, Todd J. (Inventor); Vasquez, Richard P. (Inventor); Hoenk, Michael E. (Inventor); Dickie, Matthew R. (Inventor); Nikzad, Shouleh (Inventor)

    2012-01-01

    A process for removing indium oxide from indium bumps in a flip-chip structure to reduce contact resistance, by a multi-step plasma treatment. A first plasma treatment of the indium bumps with an argon, methane and hydrogen plasma reduces indium oxide, and a second plasma treatment with an argon and hydrogen plasma removes residual organics. The multi-step plasma process for removing indium oxide from the indium bumps is more effective in reducing the oxide, and yet does not require the use of halogens, does not change the bump morphology, does not attack the bond pad material or under-bump metallization layers, and creates no new mechanisms for open circuits.

  4. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect

    Yang, Tsung-Jui; Wu, Yuh-Renn; Shivaraman, Ravi; Speck, James S.

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  5. Copper cyanide

    Integrated Risk Information System (IRIS)

    Copper cyanide ; CASRN 544 - 92 - 3 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic Ef

  6. J/{psi} production in indium-indium collisions at SPS energies

    SciTech Connect

    Pillot, P.; Ducroux, L.; Guichard, A.; Tieulent, R.; Arnaldi, R.; Colla, A.; Cortese, P.; Ferretti, A.; Oppedisano, C.; Scomparin, E.; Averbeck, R.; Drees, A.; Banicz, K.; Keil, M.; Castor, J.; Devaux, A.; Force, P.; Manso, F.; Chaurand, B.; Cicalo, C.

    2006-01-12

    The NA60 experiment collected data on dimuon production in indium-indium collisions at 158 GeV/c per incident nucleon, in year 2003, to contribute to the clarification of several questions raised by previous experiments studying high-energy heavy-ion physics at the CERN SPS in search of the quark gluon plasma. Among these previous results stands the observation, by NA50, that the production yield of J/{psi} mesons is suppressed in central Pb-Pb collisions beyond the normal nuclear absorption defined by proton-nucleus data. By comparing the centrality dependence of the suppression pattern between different colliding systems, S-U, Pb-Pb and In-In, we should be able to identify the corresponding scaling variable, and the physics mechanism driving the suppression. In this paper, we will present the ratio of J/{psi} and Drell-Yan production cross-sections in indium-indium collisions, in three centrality bins, and how these values compare to previous measurements. We will also present a study of the transverse momentum distributions of the J/{psi} mesons, in seven centrality bins.

  7. Copper: a metal for the ages

    USGS Publications Warehouse

    Doebrich, Jeff

    2009-01-01

    Copper was one of the first metals ever extracted and used by humans, and it has made vital contributions to sustaining and improving society since the dawn of civilization. Copper was first used in coins and ornaments starting about 8000 B.C., and at about 5500 B.C., copper tools helped civilization emerge from the Stone Age. The discovery that copper alloyed with tin produces bronze marked the beginning of the Bronze Age at about 3000 B.C. Copper is easily stretched, molded, and shaped; is resistant to corrosion; and conducts heat and electricity efficiently. As a result, copper was important to early humans and continues to be a material of choice for a variety of domestic, industrial, and high-technology applications today.

  8. Positive indium-111 leukocyte scintigraphy in a skeletal metastasis

    SciTech Connect

    Sfakianakis, G.N.; Mnaymneh, W.; Ghandur-Mnaymneh, L.; Al-Sheikh, W.; Hourani, M.; Heal, A.

    1982-09-01

    Indium-111 scintigraphy is a method proposed for specific diagnosis and localization of focal infection. It has been found that, in general, cancers did not visualize with leukocyte scintigraphy. In this article, a case of positive indium-111 leukocyte scintigrams of a foot metstasis from a mucoepidermoid carcinoma of the lung is reported. (JMT)

  9. Two-Step Plasma Process for Cleaning Indium Bonding Bumps

    NASA Technical Reports Server (NTRS)

    Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

    2009-01-01

    A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

  10. Indium-Based Interface Chemical Engineering by Electrochemistry and Atomic Layer Deposition for Copper Indium Diselenide Solar Cells

    NASA Astrophysics Data System (ADS)

    Guillemoles, Jean-François; Canava, Bruno; Yousfi, El Bekkaye; Cowache, Pierre; Galtayries, Anouk; Asikainen, Timo; Powalla, Michael; Hariskos, Dimitri; Schock, Hans-Werner; Lincot, Daniel

    2001-10-01

    The key to achieve better Cu(In, Ga)Se2 (CIGS) cells is through the improvement of the CIGS/ZnO interface. In this work, we illustrate various approaches, wet and dry, to engineer that interface with processes that avoid the use of Cd containing compounds. Wet chemical treatments have been performed so as to test the possibility to improve that interface by surface doping of CIGS@. X-ray photoelectron spectroscopy (XPS) and Kelvin probe studies show that such doping is not achieved in the conditions leading to best devices. Rather, the most desirable feature of the surface treatments appears to be surface passivation. We show that this can be achieved via CIGS surface reaction with In(III) ions, leading to 12.5% efficient devices. A well passivated interface can also be achieved directly, using an all dry process, by Atomic Layer Deposition (ALD) of In2S3 buffer layer, yielding to 13.5% efficient devices. The ALD growth of the buffer layers have been studied in situ with the help of a quartz crystal microgravimetry.

  11. Low frequency pressure modulation of indium antimonide

    SciTech Connect

    Hallock, Gary A.; Meier, Mark A.

    2012-07-15

    A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gap pressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient {alpha} of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.

  12. Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

    DOEpatents

    Albin, David S.; Noufi, Rommel

    2015-06-09

    Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

  13. Fabrication, structure and mechanical properties of indium nanopillars

    SciTech Connect

    Lee, Gyuhyon; Kim, Ju-Young; Budiman, Arief Suriadi; Tamura, Nobumichi; Kunz, Martin; Chen, Kai; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

    2010-01-01

    Solid and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars was characterized by scanning micro-X-ray diffraction, which shows that the indium pillars were annealed at room temperature with very few dislocations remaining in the samples. The mechanical properties of the solid pillars were characterized using a uniaxial microcompression technique, which demonstrated that the engineering yield stress is {approx}9 times greater than bulk and is {approx}1/28 of the indium shear modulus, suggesting that the attained stresses are close to theoretical strength. Microcompression of hollow indium nanopillars showed evidence of brittle fracture. This may suggest that the failure mode for one of the most ductile metals can become brittle when the feature size is sufficiently small.

  14. Kennecott Utah Copper Retrofits Smelting Applications from Air-Fuel to Oxy-Fuel Burners: Office of Industrial Technologies (OIT) Best Practices Mining Technical Case Study

    SciTech Connect

    U.S. Department of Energy

    2001-08-06

    This case study is the latest in a series on industrial firms who are implementing energy efficient technologies and system improvements into their manufacturing processes. The case studies document the activities, savings, and lessons learned on these projects.

  15. Surface modifications on InAs decrease indium and arsenic leaching under physiological conditions

    NASA Astrophysics Data System (ADS)

    Jewett, Scott A.; Yoder, Jeffrey A.; Ivanisevic, Albena

    2012-11-01

    Devices containing III-V semiconductors such as InAs are increasingly being used in the electronic industry for a variety of optoelectronic applications. Furthermore, the attractive chemical, material, electronic properties make such materials appealing for use in devices designed for biological applications, such as biosensors. However, in biological applications the leaching of toxic materials from these devices could cause harm to cells or tissue. Additionally, after disposal, toxic inorganic materials can leach from devices and buildup in the environment, causing long-term ecological harm. Therefore, the toxicity of these materials along with their stability in physiological conditions are important factors to consider. Surface modifications are one common method of stabilizing semiconductor materials in order to chemically and electronically passivate them. Such surface modifications could also prevent the leaching of toxic materials by preventing the regrowth of the unstable surface oxide layer and by creating an effective barrier between the semiconductor surface and the surrounding environment. In this study, various surface modifications on InAs are developed with the goal of decreasing the leaching of indium and arsenic. The leaching of indium and arsenic from modified substrates was assessed in physiological conditions using inductively coupled plasma mass spectrometry (ICP-MS). Substrates modified with 11-mercapto-1-undecanol (MU) and graft polymerized with poly(ethylene) glycol (PEG) were most effective at preventing indium and arsenic leaching. These surfaces were characterized using contact angle analysis, ellipsometry, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). Substrates modified with collagen and synthetic polyelectrolytes were least effective, due to the destructive nature of acidic environments on InAs. The toxicity of modified and unmodified InAs, along with raw indium, arsenic, and PEG components was assessed

  16. Patterning of Indium Tin Oxide Films

    NASA Technical Reports Server (NTRS)

    Immer, Christopher

    2008-01-01

    A relatively rapid, economical process has been devised for patterning a thin film of indium tin oxide (ITO) that has been deposited on a polyester film. ITO is a transparent, electrically conductive substance made from a mixture of indium oxide and tin oxide that is commonly used in touch panels, liquid-crystal and plasma display devices, gas sensors, and solar photovoltaic panels. In a typical application, the ITO film must be patterned to form electrodes, current collectors, and the like. Heretofore it has been common practice to pattern an ITO film by means of either a laser ablation process or a photolithography/etching process. The laser ablation process includes the use of expensive equipment to precisely position and focus a laser. The photolithography/etching process is time-consuming. The present process is a variant of the direct toner process an inexpensive but often highly effective process for patterning conductors for printed circuits. Relative to a conventional photolithography/ etching process, this process is simpler, takes less time, and is less expensive. This process involves equipment that costs less than $500 (at 2005 prices) and enables patterning of an ITO film in a process time of less than about a half hour.

  17. Discovery of Cadmium, Indium, and Tin Isotopes

    NASA Astrophysics Data System (ADS)

    Amos, Stephanie; Thoennessen, Michael

    2009-10-01

    As of today, no comprehensive study has been made covering the initial observations and identifications of isotopes. A project has been undertaken at MSU to document the discovery of all the known isotopes. The criteria defining discovery of a given isotope is the publication of clear mass and element assignment in a refereed journal. Prior to the current work the documentation of the discovery of eleven elements had been completed^1. These elements are cerium^2, arsenic, gold, tungsten, krypton, silver, vanadium, einsteinium, iron, barium, and cobalt. We will present the new documentation for the cadmium, indium, and tin isotopes. Thirty-seven cadmium isotopes, thirty-eight indium isotopes, and thirty-eight tin isotopes have been discovered so far. The description for each discovered isotope includes the year of discovery, the article published on the discovery, the article's author, the method of production, the method of identification, and any previous information concerning the isotope discovery. A summary and overview of all ˜500 isotopes documented so far as a function of discovery year, method and place will also be presented. ^1http://www.nscl.msu.edu/˜thoennes/2009/discovery.htm ^2J.Q. Ginepro, J. Snyder, and M. Thoennessen, At. Data Nucl. Data. Tables, in press (2009), doi:10.1016/j.adt.2009.06.002

  18. Increased blood and urine copper after residential exposure to copper naphthenate

    SciTech Connect

    Bluhm, R.E.; Welch, L.; Branch, R.A. )

    1992-01-01

    Despite widespread industrial use of copper naphthenate, there are no reports of the relationship of copper naphthenate and copper absorption in humans or animals. We report a family of three individuals who lived in a home where copper naphthenate was sprayed on the inner foundation. Subsequently, these individuals developed non-specific complaints. In two of these individuals, serum copper levels were elevated when first measured months after copper naphthenate was sprayed in the home. A gradual decline over several years in urine and serum copper levels was observed in the individual who maintained follow-up. It is not known if symptoms reflected exposure to naphthenate, the solvent vehicle, volatilized copper, or the stress of exposure to a malodorous compound perceived as toxic. Exposure to copper naphthenate may be another cause of an elevated serum and urine copper level but the interpretation of these levels as normal' or toxic' requires additional study for clarification. This report suggests the need for further study of the absorption and relative toxicity of copper naphthenate.

  19. Laser microstructured metal thin films as promising alternative for indium based transparent electrodes.

    PubMed

    Eckhardt, Sebastian; Siebold, Mathias; Lasagni, Andrés Fabián

    2016-03-21

    In the search for alternative materials to replace indium-tin-oxide in transparent electrodes we have structured copper and aluminum thin films (between 5 an 40 nm) for tailoring their optical properties. Micrometer scaled holes were produced using the direct laser interference patterning (DLIP) technique. We compared the optical and electrical parameters of nanosecond and picosecond processed thin films. It was found that the optical transmittance of the structured layers was relatively increased between 25 to 125% while the electrical resistance was marginally influenced. In addition, the laser treatment enhanced the diffuse to total transmission ratio (HAZE) by values ranging from 30 to 82% (relative) as a potential advantage of μm structuring. The results also show that both of the studied metals succeed to match the target which is set by typical applications of indium thin oxide (ITO) films. Furthermore, numerical simulations are performed in order to understand the ablation process of thin film material for ps and ns pulses. PMID:27136876

  20. Dispersion strengthened copper

    DOEpatents

    Sheinberg, H.; Meek, T.T.; Blake, R.D.

    1990-01-09

    A composition of matter is described which is comprised of copper and particles which are dispersed throughout the copper, where the particles are comprised of copper oxide and copper having a coating of copper oxide. A method for making this composition of matter is also described. This invention relates to the art of powder metallurgy and, more particularly, it relates to dispersion strengthened metals.

  1. Bioacid hydroconversion over Co, Ni, Cu Mono- and indium-doped bimetallic catalysts.

    PubMed

    Onyestyák, György; Harnos, Szabolcs; Kalló, Dénes

    2015-01-01

    Caprylic acid (CA) as model reactant was selectively reduced in a flow-through reactor in hydrogen stream at 21 bar total pressure and 240-360 °C over alumina loaded with the adjacent Co, Ni, Cu host and In guest metals. The main target of this research is the recognition of efficient cobalt catalysts for carboxylic group hydroconversion compared to more familiar nickel and copper composites. The catalysts were activated in H(2) flow at 21 bar and 450 °C. By variation of main metal or modification with indium, mono- or bimetallic catalysts can be obtained with low hydrodecarbonylation activity and high alcohol selectivity. These composites have higher hydrodeoxygenation (HDO) activity and alcohol selectivity than the conventional commercial catalysts applied for fatty alcohol production. Great variety of catalytic behavior indicates complexity of the surface reactions determined by several interacting factors.

  2. Accumulation and hyperaccumulation of copper in plants

    NASA Astrophysics Data System (ADS)

    Adam, V.; Trnkova, L.; Huska, D.; Babula, P.; Kizek, R.

    2009-04-01

    Copper is natural component of our environment. Flow of copper(II) ions in the environment depends on solubility of compounds containing this metal. Mobile ion coming from soil and rocks due to volcanic activity, rains and others are then distributed to water. Bio-availability of copper is substantially lower than its concentration in the aquatic environment. Copper present in the water reacts with other compounds and creates a complex, not available for organisms. The availability of copper varies depending on the environment, but moving around within the range from 5 to 25 % of total copper. Thus copper is stored in the sediments and the rest is transported to the seas and oceans. It is common knowledge that copper is essential element for most living organisms. For this reason this element is actively accumulated in the tissues. The total quantity of copper in soil ranges from 2 to 250 mg / kg, the average concentration is 30 mg / kg. Certain activities related to agriculture (the use of fungicides), possibly with the metallurgical industry and mining, tend to increase the total quantity of copper in the soil. This amount of copper in the soil is a problem particularly for agricultural production of food. The lack of copper causes a decrease in revenue and reduction in quality of production. In Europe, shows the low level of copper in total 18 million hectares of farmland. To remedy this adverse situation is the increasing use of copper fertilizers in agricultural soils. It is known that copper compounds are used in plant protection against various illnesses and pests. Mining of minerals is for the development of human society a key economic activity. An important site where the copper is mined in the Slovakia is nearby Smolníka. Due to long time mining in his area (more than 700 years) there are places with extremely high concentrations of various metals including copper. Besides copper, there are also detected iron, zinc and arsenic. Various plant species

  3. Copper urine test (image)

    MedlinePlus

    The copper urine test is performed by collecting urine at specific times for a 24-hour period. The urine is tested for the amount of copper present. The copper urine test is used to determine the presence of Wilson ...

  4. Convection sensitivity and thermal analyses for indium and indium-lead mixing experiment (74-18)

    NASA Technical Reports Server (NTRS)

    Bourgeois, S. V.; Doty, J. P.

    1976-01-01

    Sounding rocket Experiment 74-18 was designed to demonstrate the effects of the Black Brandt rocket acceleration levels (during the low-g coast phase of its flight) on the motion of a liquid metal system to assist in preflight design. Some post flight analyses were also conducted. Preflight studies consisted of heat transfer analysis and convection sensitivity and convection modeling analyses which aided in the: (1) final selection of fluid materials (indium-lead melts rather than paraffins); (2) design and timing of heater and quench system; and (3) preflight predictions of the degree of lead penetration into the pure indium segment of the fluid. Postflight studies involved: (1) updating the convection sensitivity calculations by utilizing actual flight gravity levels; and (2) modeling the mixing in the flight samples.

  5. High-efficiency indium tin oxide/indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

    1989-01-01

    Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

  6. Construction of a high efficiency copper adsorption bacterial system via peptide display and its application on copper dye polluted wastewater.

    PubMed

    Maruthamuthu, Murali Kannan; Nadarajan, Saravanan Prabhu; Ganesh, Irisappan; Ravikumar, Sambandam; Yun, Hyungdon; Yoo, Ik-Keun; Hong, Soon Ho

    2015-11-01

    For the construction of an efficient copper waste treatment system, a cell surface display strategy was employed. The copper adsorption ability of recombinant bacterial strains displaying three different copper binding peptides were evaluated in LB Luria-Bertani medium (LB), artificial wastewater, and copper phthalocyanine containing textile dye industry wastewater samples. Structural characteristics of the three peptides were also analyzed by similarity-based structure modeling. The best binding peptide was chosen for the construction of a dimeric peptide display and the adsorption ability of the monomeric and dimeric peptide displayed strains were compared. The dimeric peptide displayed strain showed superior copper adsorption in all three tested conditions (LB, artificial wastewater, and textile dye industry wastewater). When the strains were exposed to copper phthalocyanine dye polluted wastewater, the dimeric peptide display [543.27 µmol/g DCW dry cell weight (DCW)] showed higher adsorption of copper when compared with the monomeric strains (243.53 µmol/g DCW).

  7. Some adverse effects of soil amendment with organic Materials-The case of soils polluted by copper industry phytostabilized with red fescue.

    PubMed

    Cuske, Mateusz; Karczewska, Anna; Gałka, Bernard; Dradrach, Agnieszka

    2016-08-01

    The study was aimed to examine the effects of soil amendment with organic waste materials on the growth of red fescue and the uptake of Cu and Zn by this grass, in view of its potential usage for phytostabilization of Cu-polluted soils. Five soils, containing 301-5180 mg/kg Cu, were collected from the surroundings of copper smelter Legnica, and amended with lignite (LG) and limed sewage sludge (SS). Plant growth and the concentrations of Cu and Zn in the shoots and roots of grass were measured in a pot experiment and related to the results of Pytotoxkit and Microtox® tests performed on soil solution. The effects of soil amendment with LG and SS differed greatly, and depended on soil properties. In some cases, the application of alkaline SS resulted in dramatic increase of Cu phytotoxicity and its enhanced uptake by plants, while application of LG to slightly acidic soil caused increased accumulation of Zn in plants, particularly in their roots. The study confirmed good suitability of red fescue for phytostabilization of Cu-contaminated soils except for those extremely polluted. Organic amendments to be used for metal immobilization should be thoroughly examined prior to application. PMID:26853183

  8. Characteristics and antimicrobial activity of copper-based materials

    NASA Astrophysics Data System (ADS)

    Li, Bowen

    In this study, copper vermiculite was synthesized, and the characteristics, antimicrobial effects, and chemical stability of copper vermiculite were investigated. Two types of copper vermiculite materials, micron-sized copper vermiculite (MCV) and exfoliated copper vermiculite (MECV), are selected for this research. Since most of the functional fillers used in industry products, such as plastics, paints, rubbers, papers, and textiles prefer micron-scaled particles, micron-sized copper vermiculite was prepared by jet-milling vermiculite. Meanwhile, since the exfoliated vermiculite has very unique properties, such as high porosity, specific surface area, high aspect ratio of laminates, and low density, and has been extensively utilized as a functional additives, exfoliated copper vermiculite also was synthesized and investigated. The antibacterial efficiency of copper vermiculite was qualitatively evaluated by the diffusion methods (both liquid diffusion and solid diffusion) against the most common pathogenic species: Escherichia coli (E. coli), Staphylococcus aureus (S. aureus), and Klebsiella pneumoniae (K. pneumoniae). The result showed that the release velocity of copper from copper vermiculite is very slow. However, copper vermiculite clearly has excellent antibacterial efficiency to S. aureus, K. pneumoniae and E. coli. The strongest antibacterial ability of copper vermiculite is its action on S. aureus. The antibacterial efficiency of copper vermiculite was also quantitatively evaluated by determining the reduction rate (death rate) of E. coli versus various levels of copper vermiculite. 10 ppm of copper vermiculite in solution is sufficient to reduce the cell population of E. coli, while the untreated vermiculite had no antibacterial activity. The slow release of copper revealed that the antimicrobial effect of copper vermiculite was due to the strong interactions between copper ions and bacteria cells. Exfoliated copper vermiculite has even stronger

  9. Reflectance of metallic indium for solar energy applications

    NASA Technical Reports Server (NTRS)

    Bouquet, F. L.; Hasegawa, T.

    1984-01-01

    An investigation has been conducted in order to compile quantitative data on the reflective properties of metallic indium. The fabricated samples were of sufficiently high quality that differences from similar second-surface silvered mirrors were not apparent to the human eye. Three second-surface mirror samples were prepared by means of vacuum deposition techniques, yielding indium thicknesses of approximately 1000 A. Both hemispherical and specular measurements were made. It is concluded that metallic indium possesses a sufficiently high specular reflectance to be potentially useful in many solar energy applications.

  10. Kinetic investigation of indium-palladium alloy electrodeposition

    SciTech Connect

    Vinogradov, S.N.; Perelygin, Yu.P.; Efimov, E.A.

    1988-01-01

    The kinetics of alloy deposition of ammonium-citrate electrolyte used to produce alloys with indium content were studied. The electrolytes were composed of palladium, indium, ammonium sulfate, monosodium citrate, ammonium chloride, and saccharin at pH 9.5. Stationary and rotating disk electrodes and a potentiostat were used for the investigation. Spectrophotometry determined the mixed formation of citrate-ammonia palladium complexes. It was found that the considerable depolarization of indium ion discharge into the alloy occurred when saccharin was present in the electrolyte, and its direct electroreduction occurs from hydroxide compounds.

  11. Determination of indium in rocks by substoichiometric radioisotope dilution analysis

    USGS Publications Warehouse

    Greenland, L. Paul; Campbell, E.Y.

    1973-01-01

    Rocks containing 10-140 ng of indium per g are decomposed with hydrofluoric and nitric acids in the presence of 114In. Indium is separated from other constituents by sequential extractions of the bromide, cupferronate, and acetylacetonate, and is then reacted with a substoichiometric amont of EDTA. Excess of indium is removed by acetylacetone extraction and the specific activity of the complexed fraction is determined by counting 114In. Analyses of the U.S.G.S. standard rocks are reported. These show good agreement with previous neutron activation analyses. Repetitive rock analyses indicated an analytical precision of ??4-7%. ?? 1973.

  12. Electrodeposition of Indium Bumps for Ultrafine Pitch Interconnection

    NASA Astrophysics Data System (ADS)

    Tian, Yingtao; Liu, Changqing; Hutt, David; Stevens, Bob

    2014-02-01

    Electroplating is a promising method to produce ultrafine pitch indium bumps for assembly of pixel detectors in imaging applications. In this work, the process of indium bumping through electrodeposition was demonstrated and the influences of various current waveforms on the bump morphology, microstructure and height uniformity were investigated. Electron microscopy was used to study the microstructure of electroplated indium bumps and a Zygo white light interferometer was utilised to evaluate the height uniformity. The results indicated that the bump uniformities on wafer, pattern and feature scales were improved by using unipolar pulse and bipolar pulse reverse current waveforms.

  13. Copper Recycling in the United States in 2004

    USGS Publications Warehouse

    Goonan, Thomas G.

    2009-01-01

    As one of a series of reports that describe the recycling of metal commodities in the United States, this report discusses the flow of copper from production through distribution and use, with particular emphasis on the recycling of industrial scrap (new scrap1) and used products (old scrap) in the year 2004. This materials flow study includes a description of copper supply and demand for the United States to illustrate the extent of copper recycling and to identify recycling trends. Understanding how materials flow from a source through disposition can aid in improving the management of natural resource delivery systems. In 2004, the U.S. refined copper supply was 2.53 million metric tons (Mt) of refined unalloyed copper. With adjustment for refined copper exports of 127,000 metric tons (t) of copper, the net U.S. refined copper supply was 2.14 Mt of copper. With this net supply and a consumer inventory decrease of 9,000 t of refined copper, 2.42 Mt of refined copper was consumed by U.S. semifabricators (brass mills, wire rod mills, ingot makers, and foundries and others) in 2004. In addition to the 2.42 Mt of refined copper consumed in 2004, U.S. copper semifabricators consumed 853,000 t of copper contained in recycled scrap. Furthermore, 61,000 t of copper contained in scrap was consumed by noncopper alloy makers, for example, steelmakers and aluminum alloy makers. Old scrap recycling efficiency for copper was estimated to be 43 percent of theoretical old scrap supply, the recycling rate for copper was 30 percent of apparent supply, and the new-scrap-to-old-scrap ratio for U.S. copper product production was 3.2 (76:24).

  14. High quality factor indium oxide mechanical microresonators

    SciTech Connect

    Bartolomé, Javier Cremades, Ana; Piqueras, Javier

    2015-11-09

    The mechanical resonance behavior of as-grown In{sub 2}O{sub 3} microrods has been studied in this work by in-situ scanning electron microscopy (SEM) electrically induced mechanical oscillations. Indium oxide microrods grown by a vapor–solid method are naturally clamped to an aluminum oxide ceramic substrate, showing a high quality factor due to reduced energy losses during mechanical vibrations. Quality factors of more than 10{sup 5} and minimum detectable forces of the order of 10{sup −16} N/Hz{sup 1/2} demonstrate their potential as mechanical microresonators for real applications. Measurements at low-vacuum using the SEM environmental operation mode were performed to study the effect of extrinsic damping on the resonators behavior. The damping coefficient has been determined as a function of pressure.

  15. Bridging the Time Gap: A Copper/Zinc Oxide/Aluminum Oxide Catalyst for Methanol Synthesis Studied under Industrially Relevant Conditions and Time Scales.

    PubMed

    Lunkenbein, Thomas; Girgsdies, Frank; Kandemir, Timur; Thomas, Nygil; Behrens, Malte; Schlögl, Robert; Frei, Elias

    2016-10-01

    Long-term stability of catalysts is an important factor in the chemical industry. This factor is often underestimated in academic testing methods, which may lead to a time gap in the field of catalytic research. The deactivation behavior of an industrially relevant Cu/ZnO/Al2 O3 catalyst for the synthesis of methanol is reported over a period of 148 days time-on-stream (TOS). The process was investigated by a combination of quasi in situ and ex situ analysis techniques. The results show that ZnO is the most dynamic species in the catalyst, whereas only slight changes can be observed in the Cu nanoparticles. Thus, the deactivation of this catalyst is driven by the changes in the ZnO moieties. Our findings indicate that methanol synthesis is an interfacially mediated process between Cu and ZnO. PMID:27607344

  16. Bridging the Time Gap: A Copper/Zinc Oxide/Aluminum Oxide Catalyst for Methanol Synthesis Studied under Industrially Relevant Conditions and Time Scales.

    PubMed

    Lunkenbein, Thomas; Girgsdies, Frank; Kandemir, Timur; Thomas, Nygil; Behrens, Malte; Schlögl, Robert; Frei, Elias

    2016-10-01

    Long-term stability of catalysts is an important factor in the chemical industry. This factor is often underestimated in academic testing methods, which may lead to a time gap in the field of catalytic research. The deactivation behavior of an industrially relevant Cu/ZnO/Al2 O3 catalyst for the synthesis of methanol is reported over a period of 148 days time-on-stream (TOS). The process was investigated by a combination of quasi in situ and ex situ analysis techniques. The results show that ZnO is the most dynamic species in the catalyst, whereas only slight changes can be observed in the Cu nanoparticles. Thus, the deactivation of this catalyst is driven by the changes in the ZnO moieties. Our findings indicate that methanol synthesis is an interfacially mediated process between Cu and ZnO.

  17. A Bright Future for copper electrowinning

    NASA Astrophysics Data System (ADS)

    Moats, Michael; Free, Michael

    2007-10-01

    Over the past 40 years, the copper mining industry has undergone a dramatic shift toward hydrometallurgical extraction of copper at the mine site. This has increased the importance of recovering high-purity copper by electrowinning. High-purity cathode production was achieved by implementing numerous technologies including superior lead-alloy anodes, improved cathode handling and/or stainless steel blanks, better electrolyte control, and advanced tankhouse automation. In the future, it is projected that tankhouses will produce high-quality copper at lower costs using technologies that could include dimensionally stable anodes, alternative anode reactions, innovative cell designs, novel electrolyte circulation systems, and more. This paper reviews existing commercial copper electrowinning technologies and discusses advances that need to be made to implement future technologies.

  18. Indium foil with beryllia washer improves transistor heat dissipation

    NASA Technical Reports Server (NTRS)

    Hilliard, J.; John, J. E. A.

    1964-01-01

    Indium foil, used as an interface material in transistor mountings, greatly reduces the thermal resistance of beryllia washers. This method improves the heat dissipation of power transistors in a vacuum environment.

  19. Clinical imaging with indium-111 leukocytes: uptake in bowel infarction

    SciTech Connect

    Gray, H.W.; Cuthbert, I.; Richards, J.R.

    1981-08-01

    Leukocytes labeled with indium-111 accumulated in an area of small-bowel infarction, mimicking a paracolic abscess. Evidence of subacute bowel obstruction should alert the nuclear medicine physician to the former possibility.

  20. Reliability assessment of indium solder for low temperature electronic packaging

    NASA Astrophysics Data System (ADS)

    Chang, Rui W.; Patrick McCluskey, F.

    2009-11-01

    Indium is the choice of material for cryogenic joining applications. It is superior under repeated wide temperature excursions including extreme cold temperatures (below -55 °C) because of its excellent electrical conductivity and ductility at cryogenic temperatures. In particular, it is being considered for die/substrate attaches in low temperature SiGe BiCMOS modules for Martian and Lunar exploration. An efficient and systematic assessment was conducted to evaluate the reliability of indium solder under thermal fatigue and extended cold temperature mechanical fatigue conditions encountered in space exploration missions. In addition, fatigue failure sites, modes and mechanisms in indium solder at low temperature were investigated. A fatigue model was also calibrated for indium solder joint at cryogenic temperatures.

  1. Recovery of indium from LCD screens of discarded cell phones.

    PubMed

    Silveira, A V M; Fuchs, M S; Pinheiro, D K; Tanabe, E H; Bertuol, D A

    2015-11-01

    Advances in technological development have resulted in high consumption of electrical and electronic equipment (EEE), amongst which are cell phones, which have LCD (liquid crystal display) screens as one of their main components. These multilayer screens are composed of different materials, some with high added value, as in the case of the indium present in the form of indium tin oxide (ITO, or tin-doped indium oxide). Indium is a precious metal with relatively limited natural reserves (Dodbida et al., 2012), so it can be profitable to recover it from discarded LCD screens. The objective of this study was to develop a complete process for recovering indium from LCD screens. Firstly, the screens were manually removed from cell phones. In the next step, a pretreatment was developed for removal of the polarizing film from the glass of the LCD panels, because the adherence of this film to the glass complicated the comminution process. The choice of mill was based on tests using different equipment (knife mill, hammer mill, and ball mill) to disintegrate the LCD screens, either before or after removal of the polarizing film. In the leaching process, it was possible to extract 96.4 wt.% of the indium under the following conditions: 1.0M H2SO4, 1:50 solid/liquid ratio, 90°C, 1h, and stirring at 500 rpm. The results showed that the best experimental conditions enabled extraction of 613 mg of indium/kg of LCD powder. Finally, precipitation of the indium with NH4OH was tested at different pH values, and 99.8 wt.% precipitation was achieved at pH 7.4.

  2. Determination of indium in standard rocks by neutron activation analysis.

    PubMed

    Johansen, O; Steinnes, E

    1966-08-01

    A rapid neutron activation method for the determination of indium in rocks, based on 54 min (116m)In, is described. The method has been applied to a series of geochemical standards including granite G-1 and diabase W-1. The precision is better than +/- 5% for samples containing more than 5 x 10(-10)g indium. Good agreement with previously published values for G-1 and W-1 has been obtained.

  3. Status of indium phosphide solar cell development at Spire

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Keavney, C. J.; Vernon, S. M.

    1987-01-01

    On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

  4. Determination of indium in standard rocks by neutron activation analysis.

    PubMed

    Johansen, O; Steinnes, E

    1966-08-01

    A rapid neutron activation method for the determination of indium in rocks, based on 54 min (116m)In, is described. The method has been applied to a series of geochemical standards including granite G-1 and diabase W-1. The precision is better than +/- 5% for samples containing more than 5 x 10(-10)g indium. Good agreement with previously published values for G-1 and W-1 has been obtained. PMID:18959988

  5. Development of indium bumping technology through AZ9260 resist electroplating

    NASA Astrophysics Data System (ADS)

    Huang, Qiuping; Xu, Gaowei; Yuan, Yuan; Cheng, Xiao; Luo, Le

    2010-05-01

    Indium bumping is very critical technology in the application of high-density interconnection between a FPA (focal plane array) and a Si ROIC (read-out integrated circuit) by flip-chip bonding. In this paper, the indium BGA (ball grid array) chips are prepared with an electroplating method on the Si substrate. With such a method, the first difficulty arises in removing the seed layer. Two ways, including IBE (ion beam etching) and lift-off, are adopted to overcome it. The results show that the lift-off process is effective but not IBE. During the reflow process, many indium bumps fall off the substrate. Two ways are tried to solve this problem: one is to optimize the reflow profile and the other is to thicken the wetting layer. The results show that these two ways can effectively improve such status. The barrier effects of the UBM (under bump metallization) for indium, which are Ti/Pt (300 Å/200 Å) and Ti/Pt/Au/Ep Au (300 Å/200 Å/1000 Å/4 µm), are also investigated. Experimental results indicate that both of them can be used in application of integration of the FPA and ROIC. Reliability of indium bumps with these two kinds of UBM is evaluated by the shear test. The results show that their shear strength has a significant increase after reflow. For the indium bump with UBM of Ti/Pt/Au/Ep Au (300 Å/200 Å/1000 Å/4 µm), IMC (intermetallic compounds) at the interface of Au-In can strengthen the indium bump but may change the plasticity of indium.

  6. Analysis of the production of ATLAS indium bonded pixel modules

    NASA Astrophysics Data System (ADS)

    Alimonti, G.; Andreazza, A.; Bulgheroni, A.; Corda, G.; Di Gioia, S.; Fiorello, A.; Gemme, C.; Koziel, M.; Manca, F.; Meroni, C.; Nechaeva, P.; Paoloni, A.; Rossi, L.; Rovani, A.; Ruscino, E.

    2006-09-01

    The ATLAS collaboration is currently building 1500 pixel modules using the indium bump bonding technique developed by SELEX Sistemi Integrati (former AMS). The indium deposition and flip-chip process are described together with an overview of the chip stripping machine that allows defective modules to be reworked. The production is half-way through at the time of this writing. This paper also discusses the problems encountered during production and the adopted solutions.

  7. Dynamic of active microorganisms inhabiting a bioleaching industrial heap of low‐grade copper sulfide ore monitored by real‐time PCR and oligonucleotide prokaryotic acidophile microarray

    PubMed Central

    Remonsellez, Francisco; Galleguillos, Felipe; Moreno‐Paz, Mercedes; Parro, Víctor; Acosta, Mauricio; Demergasso, Cecilia

    2009-01-01

    Summary The bioleaching of metal sulfide has developed into a very important industrial process and understanding the microbial dynamic is key to advancing commercial bioleaching operations. Here we report the first quantitative description of the dynamic of active communities in an industrial bioleaching heap. Acidithiobacillus ferrooxidans was the most abundant during the first part of the leaching cycle, while the abundance of Leptospirillum ferriphilum and Ferroplasma acidiphilum increased with age of the heap. Acidithiobacillus thiooxidans kept constant throughout the leaching cycle, and Firmicutes group showed a low and a patchy distribution in the heap. The Acidiphilium‐like bacteria reached their highest abundance corresponding to the amount of autotrophs. The active microorganisms in the leaching system were determined using two RNA‐based sensitive techniques. In most cases, the 16S rRNA copy numbers of At. ferrooxidans, L. ferriphilum, At. thiooxidans and F. acidiphilum, was concomitant with the DNA copy numbers, whereas Acidiphilium‐like bacteria and some Firmicutes members did not show a clear correlation between 16S rRNA accumulation and DNA copy numbers. However, the prokaryotic acidophile microarray (PAM) analysis showed active members of Alphaproteobacteria in all samples and of Sulfobacillus genus in older ones. Also, new active groups such as Actinobacteria and Acidobacterium genus were detected by PAM. The results suggest that changes during the leaching cycle in chemical and physical conditions, such as pH and Fe3+/Fe2+ ion rate, are primary factors shaping the microbial dynamic in the heap. PMID:21255296

  8. Additive monitoring and interactions during copper electroprocessing

    NASA Astrophysics Data System (ADS)

    Collins, Dale Wade

    The electrochemical deposition of copper has been a major focus of research for decades. Renewed interest in copper electroplating is not limited to the copper producers but is also a major concern of semiconductor manufacturers. The focus on copper electrochemistry by the semiconductor manufacturers has increased since IBM's announcement in 1997 that copper will be used for metallization in high speed/power semiconductors [1--3]. The desire to use copper instead of aluminum is simply a reflection on copper's superior conductivity (lower RC time constants) and resistance to electromigration (generally proportional to the melting point). This dissertation is the compilation of the research into analytical techniques for monitoring surface-active additives in common sulfuric acid/copper sulfate plating baths. Chronopotentiometric, DC and AC voltammetry were the major analytical techniques used in this research. Several interactions between the additives will also be presented along with their apparent decline in activity. The decline in activity is well known in the industry and is also detected by these methods as presented in chapters 4 and 5. Finally, a systemic approach for monitoring the additive Galactosal, which is commonly used in electrowinning, will be outlined. The monitoring system proposed herein would have to be adjusted for each electrowinning facility because each has a unique chemistry and cell configuration.

  9. [Copper and copper alloys. Technology updates].

    PubMed

    Loconsolo, V; Crespi, M

    2012-01-01

    The correlations between copper and copper alloys and human health have been the subject of some recent and extensive scientific researches. The voluntary risks evaluation, which anticipated the EU REACH Directive application, has shown that copper is a "safe" product for human health and for environment. In addition, it could be of great help thanks to its antibacterial properties. Copper tube can contribute in a relevant way to the prevention of water systems pollution by Legionella. Also the spreading of nosocomial infections is significantly contrasted by the use of copper and copper alloys for the production of articles intended for being frequently touched by people. The Environmental Protection Agency of the United States has in fact "registered" as antibacterial over 350 of copper alloys. PMID:23213799

  10. Estimating Dermal Transfer of Copper Particles from the Surfaces of Pressure-Treated Lumber and Implications for Exposure

    EPA Science Inventory

    Lumber pressure-treated with micronized copper was examined for the release of copper and copper micro/nanoparticles using a surface wipe method to simulate dermal transfer. In 2003, the wood industry began replacing CCA treated lumber products for residential use with copper ba...

  11. Canadian soil quality guidelines for copper: Environmental and human health

    SciTech Connect

    1997-12-31

    This report begins with background information on the physical and chemical properties of copper, the production and use of copper in Canada, its levels in the Canadian environment, and existing guidelines and criteria regarding copper concentrations in various media. It then reviews the environmental fate and behaviour of copper, notably in the soil; the behavior and effects of copper in biota, including soil microbial processes, terrestrial plants and invertebrates, livestock and wildlife, and bioaccumulation; and the pharmacokinetics and toxicology of copper in mammals and humans, concluding with an overall toxicological evaluation and human exposure estimates. This information is used to derive environmental and human health soil quality guidelines for copper to protect environmental and human health receptors, for agricultural, residential/parkland, commercial, and industrial land uses.

  12. Body of Knowledge (BOK) for Copper Wire Bonds

    NASA Technical Reports Server (NTRS)

    Rutkowski, E.; Sampson, M. J.

    2015-01-01

    Copper wire bonds have replaced gold wire bonds in the majority of commercial semiconductor devices for the latest technology nodes. Although economics has been the driving mechanism to lower semiconductor packaging costs for a savings of about 20% by replacing gold wire bonds with copper, copper also has materials property advantages over gold. When compared to gold, copper has approximately: 25% lower electrical resistivity, 30% higher thermal conductivity, 75% higher tensile strength and 45% higher modulus of elasticity. Copper wire bonds on aluminum bond pads are also more mechanically robust over time and elevated temperature due to the slower intermetallic formation rate - approximately 1/100th that of the gold to aluminum intermetallic formation rate. However, there are significant tradeoffs with copper wire bonding - copper has twice the hardness of gold which results in a narrower bonding manufacturing process window and requires that the semiconductor companies design more mechanically rigid bonding pads to prevent cratering to both the bond pad and underlying chip structure. Furthermore, copper is significantly more prone to corrosion issues. The semiconductor packaging industry has responded to this corrosion concern by creating a palladium coated copper bonding wire, which is more corrosion resistant than pure copper bonding wire. Also, the selection of the device molding compound is critical because use of environmentally friendly green compounds can result in internal CTE (Coefficient of Thermal Expansion) mismatches with the copper wire bonds that can eventually lead to device failures during thermal cycling. Despite the difficult problems associated with the changeover to copper bonding wire, there are billions of copper wire bonded devices delivered annually to customers. It is noteworthy that Texas Instruments announced in October of 2014 that they are shipping microcircuits containing copper wire bonds for safety critical automotive applications

  13. Removal of Pb(II) ions from aqueous solution by a waste mud from copper mine industry: equilibrium, kinetic and thermodynamic study.

    PubMed

    Ozdes, Duygu; Gundogdu, Ali; Kemer, Baris; Duran, Celal; Senturk, Hasan Basri; Soylak, Mustafa

    2009-07-30

    The objective of this study was to assess the adsorption potential of a waste mud (WM) for the removal of lead (Pb(II)) ions from aqueous solutions. The WM was activated with NaOH in order to increase its adsorption capacity. Adsorption studies were conducted in a batch system as a function of solution pH, contact time, initial Pb(II) concentration, activated-waste mud (a-WM) concentration, temperature, etc. Optimum pH was specified as 4.0. The adsorption kinetic studies indicated that the overall adsorption process was best described by pseudo-second-order kinetics. The equilibrium adsorption capacity of a-WM was obtained by using Langmuir and Freundlich isotherm models and both models fitted well. Adsorption capacity for Pb(II) was found to be 24.4 mg g(-1) for 10 g L(-1) of a-WM concentration. Thermodynamic parameters including the Gibbs free energy (Delta G degrees), enthalpy (Delta H degrees), and entropy (DeltaS degrees) indicated that the adsorption of Pb(II) ions on the a-WM was feasible, spontaneous and endothermic, at temperature range of 0-40 degrees C. Desorption studies were carried out successfully with diluted HCl solutions. The results indicate that a-WM can be used as an effective and no-cost adsorbent for the treatment of industrial wastewaters contaminated with Pb(II) ions.

  14. Low temperature solder process to join a copper tube to a silicon wafer

    NASA Astrophysics Data System (ADS)

    Versteeg, Christo; Scarpim de Souza, Marcio

    2014-06-01

    With the application for wafer level packages, which could be Complementary Metal-Oxide-Semiconductor (CMOS) based, and which requires a reduced atmosphere, a copper tube connection to a vacuum pump and the package is proposed. The method evaluated uses laser assisted brazing of a solder, to join the copper tube to a silicon wafer. The method was applied to a silicon wafer coated with a metallic interface to bond to the solder. The hermeticity of the joint was tested with a helium leak rate tester and the bonding energy thermal extent was verified with a thin layer of indium that melted wherever the substrate temperature rose above its melting temperature.

  15. [Copper transport and metabolism].

    PubMed

    Kurasaki, Masaaki; Saito, Takeshi

    2016-07-01

    In this review, copper metabolism and transport in mammalian tissues are introduced and discussed. Firstly, the copper required amounts and LD50 levels are shown to explain the difficult balances of copper in the cells between necessity and toxicity. Furthermore, on the basis of literatures published, relationship between copper-binding metallothioneins and mechanisms for the absorption and excretion of copper or hereditary copper metabolic disorders metabolism abnormality symptom are explained. Finally it has been indicated that apoptosis induced by heavy metals, especially copper was initiated by production of reactive oxygen species and oxidative stress in the cells. To understand precise mechanism for copper homeostasis in mammalian cells, further investigation will be needed to clarify the copper behaviors in normal and abnormal situations. PMID:27455798

  16. Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

    NASA Astrophysics Data System (ADS)

    Gong, Jiao-Li; Liu, Jin-Song; Chu, Zheng; Yang, Zhen-Gang; Wang, Ke-Jia; Yao, Jian-Quan

    2016-10-01

    The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide (InSb) and indium arsenide (InAs) in an intense terahertz (THz) field are studied by using the method of ensemble Monte Carlo (EMC) at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 kV/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in InSb, and only 5 THz in InAs, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in InSb, while impact ionization and intervalley scattering work together in InAs. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574105 and 61177095), the Natural Science Foundation of Hubei Province, China (Grant Nos. 2012FFA074 and 2013BAA002), the Wuhan Municipal Applied Basic Research Project, China (Grant No. 20140101010009), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2013KXYQ004 and 2014ZZGH021).

  17. Investigation of Post-Etch Copper Residue on Direct Bonded Copper (DBC) Substrates

    NASA Astrophysics Data System (ADS)

    Mei, Yunhui; Lu, Guo-Quan; Chen, Xu; Gang, Chen; Luo, Shufang; Ibitayo, Dimeji

    2011-10-01

    For many years, direct bonded copper (DBC) substrates have proved to be an excellent solution for electrical isolation and thermal management of high-power semiconductor modules. However, in this study we detected a copper residue on the surface of DBC alumina, presumably a result of pattern etching even in industry. As is known, growth of metal dendrites could be observed with the assistance of electric field, temperature, and humidity. Metal dendrites normally grow from the cathode to anode. Silver and copper are two kinds of metals susceptible to migration. In this work, copper dendrites could be formed at 400°C and 50 V/mm between conductors. These dendrites may impact the reliability of DBC in power electronic applications. Therefore, the formation of copper residue is an interesting phenomenon for etched DBC and warrants further attention in the future.

  18. Highly Conducting Transparent Indium-Doped Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Singh, Budhi; Ghosh, Subhasis

    2014-09-01

    Highly conducting transparent indium-doped zinc oxide (IZO) thin films have been achieved by controlling different growth parameters using radio frequency magnetron sputtering. The structural, electrical, and optical properties of the IZO thin films have been investigated for varied indium content and growth temperature ( T G) in order to find out the optimum level of doping to achieve the highest conducting transparent IZO thin films. The highest mobility and carrier concentration of 11.5 cm2/V-s and 3.26 × 1020 cm-3, respectively, have been achieved in IZO doped with 2% indium. It has been shown that as T G of the 2% IZO thin films increase, more and more indium atoms are substituted into Zn sites leading to shift in (002) peaks towards higher angles which correspond to releasing the stress within the IZO thin film. The minimum resistivity of 5.3 × 10-4 Ω-cm has been achieved in 2% indium-doped IZO grown at 700°C.

  19. Indium-granulocyte scanning in the painful prosthetic joint

    SciTech Connect

    Pring, D.J.; Henderson, R.G.; Keshavarzian, A.; Rivett, A.G.; Krausz, T.; Coombs, R.R.; Lavender, J.P.

    1986-07-01

    The value of indium-111-labeled granulocyte scanning to determine the presence of infection was assessed in 50 prosthetic joints (41 of which were painful) in 40 patients. Granulocytes were obtained from the patients' blood and labeled in plasma with indium 111 tropolonate. Abnormal accumulation of indium 111 in the region of the prosthesis was noted. Proven infection occurred in 11 prostheses, and all of the infections were detected by indium-111-labeled granulocyte scanning. Nineteen were not infected (including nine asymptomatic controls) and only two produced false-positive scans. This represents a specificity of 89.5%, sensitivity of 100%, and overall accuracy of 93.2%. These results compare favorably with plain radiography. There was no radiologic evidence of infection in three of the infected prostheses, and 10 of the noninfected prostheses had some radiologic features that suggested sepsis. We conclude that indium-granulocyte scanning can reliably detect or exclude infection in painful prosthetic joints and should prove useful in clinical management.

  20. Effects of Copper Nanomaterials on Marine Benthic Communities

    EPA Science Inventory

    Copper nanomaterials (CuNMs) are used as an anti-bacterial and anti-fouling agent in numerous commercial and industrial products, including water purifiers, fungicides, wood and touch surfaces. The widespread popularity of copper nanomaterials in consumer products increases the r...

  1. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  2. Indium-111-Photofrin-II scintillation scan

    SciTech Connect

    Origitano, T.C.; Karesh, S.M.; Reichman, O.H.; Henkin, R.E.; Caron, M.J.

    1989-04-01

    Photodynamic therapy is under intense investigation as an adjuvant treatment for malignant glial tumors of the central nervous system. Photofrin-II (HpD-II) is currently the most actively investigated photosensitizing agent. A crucial issue regarding the safe and efficacious usage of HpD-II-based photodynamic therapy is the individual in vivo kinetics of tumor uptake and retention, compared with normal brain clearance. The optimal time for photoactivation of sensitized tumor must be known to ensure a high target-to-nontarget ratio, resulting in the maximal tumor destruction while preserving normal brain. Our laboratory developed a radionuclide scan based on 111indium (111In)-labeled HpD-II to evaluate HpD-II localization and clearance noninvasively within a canine model of intracerebral gliosarcoma. Synthesis of the 111In-HpD-II complex in greater than 90% yield is achieved by a simple, rapid labeling method. Radiochemical purity and stability were verified by high-performance liquid chromatography. Using the canine model of intracerebral gliosarcoma, we followed the uptake of 111In-HpD-II in tumors with serial scintillation scanning. Localization of the tumor by 111In-HpD-II has been verified by contrast-enhanced computed tomographic scan followed by gross and histological examination of the enhancing brain region. Total body biodistribution of 111In-HpD-II at various times after injection has been evaluated. The ratio of uptake in tumor compared with surrounding brain peaked at 72 hours after injection. The knowledge of regional distribution and concentration of a photosensitizing agent within a tumor mass and surrounding brain allows for the most efficacious timing and localization of a photoactivating source.

  3. Materials flow of indium in the United States in 2008 and 2009

    USGS Publications Warehouse

    Goonan, Thomas G.

    2012-01-01

    Indium is a material that has many applications. It is used by anyone who watches television or views a computer screen. It is found in solar energy arrays and in soldering applications that are required to be lead free. In 2009, about 550 metric tons (t) of indium metal was produced from primary sources world-wide; it was estimated that the United States consumed about 110 t of indium metal (20 percent of world primary production). However, when imports of consumer products that contain indium are considered, the United States consumed about 200 t of indium (36 percent of world primary production). When one considers the recovery from the low-efficiency sputtering process that coats indium-tin oxide onto glass and other surfaces, the recycling rate (within the manufacturing process that uses indium-tin oxide in flat panel displays approaches 36 percent. However, indium recovery from old scrap generated from end-of-life consumer products is not sufficiently economic to add significantly to secondary production. Between 1988 and 2010, indium prices averaged $381 per kilogram (in constant 2000 dollars). However, prices have been quite volatile (deviating from the average of $381 per kilogram by ±$199 per kilogram, a 52 percent difference from the average), reflecting short-term disequilibrium of supply and demand but also responsiveness of supply to demand. The dynamics of zinc smelting govern the primary supply of indium because indium is a byproduct of zinc smelting. Secondary indium supply, which accounts for about one-half of total indium supply, is governed by indium prices and technological advances in recovery. Indium demand is expected to grow because the number and volume of cutting edge technology applications that depend on indium are expected to grow.

  4. Indium oxide inverse opal films synthesized by structure replication method

    NASA Astrophysics Data System (ADS)

    Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

    2016-04-01

    We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

  5. Occult purulent pericarditis detected by indium-111 leukocyte imaging

    SciTech Connect

    Greenberg, M.L.; Niebulski, H.I.; Uretsky, B.F.; Salerni, R.; Klein, H.A.; Forstate, W.J.; Starzl, T.E.

    1984-05-01

    Leukocyte imaging with indium-111 is a relatively new technique which, to this point in time, has been discussed almost exclusively in the radiologic literature. Although this procedure has been used mainly to detect intra-abdominal infection, the thorax is routinely imaged along with the abdomen, and therefore detection of cardiac disease may be feasible. This case report is of a young woman after liver transplantation who developed occult purulent pericarditis initially detected by a leukocyte scan with indium-111. This case demonstrates that striking pericardial uptake on a whole-body indium-111 leukocyte scan can occur with purulent pericarditis, and it reemphasizes how insidiously purulent pericarditis may present in an immunosuppressed patient.

  6. Mobility of indium on the ZnO(0001) surface

    SciTech Connect

    Heinhold, R.; Reeves, R. J.; Allen, M. W.; Williams, G. T.; Evans, D. A.

    2015-02-02

    The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at ∼520 °C, with indium migrating from the (0001{sup ¯}) underside of the wafer, around the non-polar (11{sup ¯}00) and (112{sup ¯}0) sidewalls, to form a uniform self-organized (∼20 Å) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In{sub 2}O{sub 3} precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates.

  7. Synthesis and conductivity of indium-doped tin pyrophosphates

    SciTech Connect

    Garzon, Fernando H; Mukundan, Rangachary; Brosha, Eric L

    2008-01-01

    We have synthesized indium-doped tin pyrophosphates as high-temperature anhydrous proton conductors. The ratio of tin to indium was varied using two different synthetic methods. The first is a high-temperature reaction in which a paste containing the reactants in excess phosphoric acid was heated for various amounts of time at various temperatures. The second method is a solution precipitation procedure followed by calcination, which offers several advantages over traditional synthetic techniques. These advantages inc 1 ude better stoichiometric control, lower temperature requirements, and chemically uniform products. Several phosphate sources were investigated, including phosphoric acid, pyrophosphoric acid, and potassium pyrophosphate. The resulting indium-doped tin pyrophosphates had good proton conductivity over a wide temperature range with no humidification.

  8. Temperature dependence of the internal friction of polycrystalline indium

    NASA Astrophysics Data System (ADS)

    Sapozhnikov, K. V.; Golyandin, S. N.; Kustov, S. B.

    2010-12-01

    The temperature dependences of the internal friction and the elastic modulus of polycrystalline indium have been investigated in the temperature range 7-320 K at oscillatory loading frequencies of approximately 100 kHz. The effect of temperature on the amplitude dependence and the effect of high-amplitude loading at 7 K on the temperature and amplitude dependences of the internal friction of indium have been analyzed. It has been demonstrated that the thermocycling leads to microplastic deformation of indium due to the anisotropy of thermal expansion and the appearance of a "recrystallization" maximum in the spectrum of the amplitude-dependent internal friction. The conclusion has been drawn that the bulk diffusion of vacancies and impurities begins at temperatures of approximately 90 K and that, at lower temperatures, the diffusion occurs in the vicinity of dislocations. It has been revealed that the high-temperature internal friction background becomes noticeable after the dissolution of Cottrell atmospheres.

  9. Reduction of copper sulphate with elemental iron for preparation of copper nanoparticles

    NASA Astrophysics Data System (ADS)

    Nazim, Muhammad

    range. Nowadays, nano sized particles has potential applications in different engineering and industrial fields. In this research work, emphasis was given to produce copper nano-particles. The reaction of copper sulphate solution with iron wire was studied in the presence of different organic solvents to verify the size and purity of the produced copper particles. 1-butanol proved to be a competent solvent in producing nearly nano sized copper particles with particles size as small as 165 nanometers in the form of clusters and purity as high as 93.67 weight% of copper. In order to determine the copper particles with the smallest size (nano range) and copper purity to a considerable level, characterization was done with the produced copper particles. For this purpose, the effect of sonication, addition of surfactant and chelation by adding EDTA were studied. It can be concluded that nano size copper particles with size less than 100 nm with copper purity of 100% were produced by reaction of 5% copper sulphate solution in the presence of 2 ml surfactant with iron wire and sonication. These copper nano particles have potential applications as catalysts for different industrial organic reactions. Finally, optimization studies of the process parameters effect on the reaction yield of copper sulphate with both types of iron substrates (wire and powder) were carried out using MATLAB 7.0 software. In this study, the relationship between three process variables namely the initial concentration of copper, temperature and pH of solution with reaction yield of copper cementation reaction was investigated for both the cases. Cubic mixture models were developed by using three levels full factorial design to find out the main effects and interactions of these process variables on the reaction yields of copper. The validity of the cubic mixture regressed models have been verified with high regression coefficients and through normal probability curves for residuals. Finally, response

  10. Highly Stable Transparent Electrodes Made from Copper Nanotrough Coated with AZO/Al2O3.

    PubMed

    Li, Peng; Yan, Xingzhen; Ma, Jiangang; Xu, Haiyang; Liu, Yichun

    2016-04-01

    Due to their high flexibility, high conductivity and high transparency in a wide spectrum range, metal nanowires and meshes are considered to be two of the most promising candidates to replace the traditional transparent conducting films, such as tin doped indium oxide. In this paper, transparent conducting films made from copper nanotroughs are prepared by the electrospinning of polymer fibers and subsequent thermal evaporation of copper. The advantages of the technique include low junction resistance, low cost and low preparation temperature. Although the copper nanotrough transparent conducting films exhibited a low sheet resistance (19.2 Ω/sq), with a high transmittance (88% at 550 nm), the instability of copper in harsh environments seriously hinders its applications. In order to improve the stability of the metal transparent conducting films, copper nanotroughs were coated with 39 nm thick aluminum-doped zinc oxide and 1 nm thick aluminum oxide films by atomic layer deposition. The optical and electrical measurements show that coating copper nanotrough with oxides barely reduces the transparency of the films. It is worth noting that conductive oxide coating can effectively protect copper nanotroughs from thermal oxidation or acidic corrosion, whilst maintaining the same flexibility as copper nanotroughs on its own. PMID:27451715

  11. Equation of state of liquid Indium under high pressure

    SciTech Connect

    Li, Huaming E-mail: mo.li@gatech.edu; Li, Mo E-mail: mo.li@gatech.edu; Sun, Yongli

    2015-09-15

    We apply an equation of state of a power law form to liquid Indium to study its thermodynamic properties under high temperature and high pressure. Molar volume of molten indium is calculated along the isothermal line at 710K within good precision as compared with the experimental data in an externally heated diamond anvil cell. Bulk modulus, thermal expansion and internal pressure are obtained for isothermal compression. Other thermodynamic properties are also calculated along the fitted high pressure melting line. While our results suggest that the power law form may be a better choice for the equation of state of liquids, these detailed predictions are yet to be confirmed by further experiment.

  12. Indium-doped GaAs: Investigation of deep traps

    NASA Astrophysics Data System (ADS)

    Laurenti, J. P.; Wolter, K.; Roentgen, P.; Seibert, K.; Kurz, H.; Camassel, J.

    1989-03-01

    The effect of indium incorporation on the concentration of deep traps in a series of GaAs epitaxial layers has been investigated by performing quantitative photoluminescence (PL) and capacitance [deep-level transient spectroscopy (DLTS)] spectroscopic studies. All samples were epitaxial layers of n-type GaAs:In, grown by organometallic vapor-phase epitaxy (OMVPE) on liquid-encapsulated Czochralski (LEC) -grown GaAs:Cr substrates. The calibrated indium concentration ranged between 0 and 6.5×1019 atoms cm-3, which is about 0.3% in alloy composition. We have investigated (i) the bands associated with chromium in both the epitaxial layers and the original substrates; (ii) a large recombination band, associated with an unidentified (D-VGa) complex, at about 1.2 eV; and (iii) the DLTS signal associated with the well-known deep trap EL2. We find the following. First, there is a one-to-one correspondence between the PL intensity associated with Cr2+, at 0.84 eV, and the D-VGa signal at 1.2 eV. This is true for both the epitaxial layers and the original substrates and suggests identification of the unknown donor participating in the D-VGa complex as Cr4+. Second, we find all PL intensities to decrease with increasing indium concentration, while the concentration and depth profile of EL2 are not affected. In contrast to the near-band-edge PL intensity, which increased with increasing indium content, there is a drop by about 1 order of magnitude for all chromium-related features when going from indium-free to about 0.3% indium-rich sample. Moreover, there is a one-to-one correspondence between the increase in the near-band-edge PL intensity and the decrease in the chromium-related signals. This establishes, on a fully experimental basis, the relative roles played by indium and chromium in our epitaxial samples: both compete to incorporate on gallium sites in the strain field of neighboring vacancies but, because of a higher incorporation rate, increasing the indium

  13. Equation of state of liquid Indium under high pressure

    NASA Astrophysics Data System (ADS)

    Li, Huaming; Sun, Yongli; Li, Mo

    2015-09-01

    We apply an equation of state of a power law form to liquid Indium to study its thermodynamic properties under high temperature and high pressure. Molar volume of molten indium is calculated along the isothermal line at 710K within good precision as compared with the experimental data in an externally heated diamond anvil cell. Bulk modulus, thermal expansion and internal pressure are obtained for isothermal compression. Other thermodynamic properties are also calculated along the fitted high pressure melting line. While our results suggest that the power law form may be a better choice for the equation of state of liquids, these detailed predictions are yet to be confirmed by further experiment.

  14. Transition properties of low-lying states in atomic indium

    SciTech Connect

    Sahoo, B. K.; Das, B. P.

    2011-07-15

    We present here the results of our relativistic many-body calculations of various properties of the first six low-lying excited states of indium. The calculations were performed using the relativistic coupled-cluster method in the framework of the singles, doubles, and partial triples approximation. The lifetime of the [4p{sup 6}]5s{sup 2}5p{sub 3/2} state in this atom is determined. Our results could be used to shed light on the reliability of the lifetime measurements of the excited states of atomic indium that we have considered in the present work.

  15. Discovery of the calcium, indium, tin, and platinum isotopes

    SciTech Connect

    Amos, S.; Gross, J.L.; Thoennessen, M.

    2011-07-15

    Currently, twenty-four calcium, thirty-eight indium, thirty-eight tin, and thirty-nine platinum isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented. - Highlights: Documentation of the discovery of all calcium, indium, tin and platinum isotopes. {yields} Summary of author, journal, year, place and country of discovery for each isotope. {yields} Brief description of discovery history of each isotope.

  16. Deep Subgap Feature in Amorphous Indium Gallium Zinc Oxide. Evidence Against Reduced Indium

    SciTech Connect

    Sallis, Shawn; Quackenbush, Nicholas F.; Williams, Deborah S.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.

    2015-01-14

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. In spite of the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. We present evidence against In+ lone pair active electrons as the origin of the deep subgap features. No In+ species are observed, only In0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states.

  17. Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

    SciTech Connect

    Yoshimura, Masatoshi Nakai, Eiji; Fukui, Takashi; Tomioka, Katsuhiro

    2013-12-09

    Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436 V, short-circuit current of 24.8 mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5 G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

  18. Copper-tantalum alloy

    DOEpatents

    Schmidt, Frederick A.; Verhoeven, John D.; Gibson, Edwin D.

    1986-07-15

    A tantalum-copper alloy can be made by preparing a consumable electrode consisting of an elongated copper billet containing at least two spaced apart tantalum rods extending longitudinally the length of the billet. The electrode is placed in a dc arc furnace and melted under conditions which co-melt the copper and tantalum to form the alloy.

  19. On copper peroxide

    NASA Technical Reports Server (NTRS)

    Moser, L.

    1988-01-01

    The action of hydrogen superoxide on copper salts in alcoholic solutions is studied. The action of hydrogen peroxide on copper hydroxide in alcoholic suspensions, and the action of ethereal hydrogen peroxide on copper hydroxide are discussed. It is concluded that using the procedure proposed excludes almost entirely the harmful effect of hydrolysis.

  20. Demystifying Controlling Copper Corrosion

    EPA Science Inventory

    The LCR systematically misses the highest health and corrosion risk sites for copper. Additionally, there are growing concerns for WWTP copper in sludges and discharge levels. There are many corrosion control differences between copper and lead. This talk explains the sometimes c...

  1. [Copper pathology (author's transl)].

    PubMed

    Mallet, B; Romette, J; Di Costanzo, J D

    1982-01-30

    Copper is an essential dietary component, being the coenzyme of many enzymes with oxidase activity, e.g. ceruloplasmin, superoxide dismutase, monoamine oxidase, etc. The metabolism of copper is complex and imperfectly known. Active transport of copper through the intestinal epithelial cells involves metallothionein, a protein rich in sulfhydryl groups which also binds the copper in excess and probably prevents absorption in toxic amounts. In hepatocytes a metallothionein facilitates absorption by a similar mechanism and regulates copper distribution in the liver: incorporation in an apoceruloplasmin, storage and synthesis of copper-dependent enzymes. Metallothioneins and ceruloplasmin are essential to adequate copper homeostasis. Apart from genetic disorders, diseases involving copper usually result from hypercupraemia of varied origin. Wilson's disease and Menkes' disease, although clinically and pathogenetically different, are both marked by low ceruloplasmin and copper serum levels. The excessive liver retention of copper in Wilson's disease might be due to increased avidity of hepatic metallothioneins for copper and decreased biliary excretion through lysosomal dysfunction. Menkes' disease might be due to low avidity of intestinal and hepatic metallothioneins for copper. The basic biochemical defect responsible for these two hereditary conditions has not yet been fully elucidated.

  2. Evaluation of critical materials for five advanced design photovoltaic cells with an assessment of indium and gallium

    SciTech Connect

    Watts, R.L.; Gurwell, W.E.; Jamieson, W.M.; Long, L.W.; Pawlewicz, W.T.; Smith, S.A.; Teeter, R.R.

    1980-05-01

    The objective of this study is to identify potential material supply constraints due to the large-scale deployment of five advanced photovoltaic (PV) cell designs, and to suggest strategies to reduce the impacts of these production capacity limitations and potential future material shortages. This report presents the results of the screening of the five following advanced PV cell designs: polycrystalline silicon, amorphous silicon, cadmium sulfide/copper sulfide frontwall, polycrystalline gallium arsenide MIS, and advanced concentrator-500X. Each of these five cells is screened individually assuming that they first come online in 1991, and that 25 GWe of peak capacity is online by the year 2000. A second computer screening assumes that each cell first comes online in 1991 and that each cell has 5 GWe of peak capacity by the year 2000, so that the total online cpacity for the five cells is 25 GWe. Based on a review of the preliminary basline screening results, suggestions were made for varying such parameters as the layer thickness, cell production processes, etc. The resulting PV cell characterizations were then screened again by the CMAP computer code. Earlier DOE sponsored work on the assessment of critical materials in PV cells conclusively identtified indium and gallium as warranting further investigation as to their availability. Therefore, this report includes a discussion of the future availability of gallium and indium. (WHK)

  3. Non-Stoichiometric Amorphous Indium Selenide Thin Films as a Buffer Layer for CIGS Solar Cells with Various Temperatures in Rapid Thermal Annealing.

    PubMed

    Yoo, Myoung Han; Kim, Nam-Hoon

    2016-05-01

    The conventional structure of most of copper indium gallium diselenide (Culn(1-x)Ga(x)Se2, CIGS) solar cells includes a CdS thin film as a buffer layer. Cd-free buffer layers have attracted great interest for use in photovoltaic applications to avoid the use of hazardous and toxic materials. The RF magnetron sputtering method was used with an InSe2 compound target to prepare the indium selenide precursor. Rapid thermal annealing (RTA) was conducted in ambient N2 gas to control the concentration of volatile Se from the precursor with a change in temperature. The nature of the RTA-treated indium selenide thin films remained amorphous under annealing temperatures of ≤ 700 degrees C. The Se concentration of the RTA-treated specimens demonstrated an opposite trend to the annealing temperature. The optical transmittance and band gap energies were 75.33% and 2.451-3.085 eV, respectively, and thus were suitable for the buffer layer. As the annealing temperature increased, the resistivity decreased by an order-of-magnitude from 10(4) to 10(1) Ω-cm. At lower Se concentrations, the conductivity abruptly changed from p-type to n-type without crystallite formation in the amorphous phase, with the carrier concentration in the order of 10(17) cm(-3). PMID:27483873

  4. A Simulator for Copper Ore Leaching

    SciTech Connect

    Travis, B.

    1999-05-14

    This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). Copper is a strategic metal and the nation needs a secure supply both for industrial use and military needs. However, demand is growing worldwide and is outstripping the ability of the mining industry to keep up. Improved recovery methods are critically needed to maintain the balance of supply and demand. The goal of any process design should be to increase the amount of copper recovered, control movement of acid and other environmentally harmful chemicals, and reduce energy requirements. To achieve these ends, several improvements in current technology are required, the most important of which is a better understanding of, and the ability to quantify, how fluids move through heterogeneous materials in a complex chemical environment. The goal of this project is create a new modeling capability that couples hydrology with copper leaching chemistry . once the model has been verified and validated, we can apply the model to specific problems associated with heap leaching (flow channeling due to non-uniformities in heap structure, precipitation/dissolution reactions, and bacterial action), to understand the causes of inefficiencies, and to design better recovery systems. We also intend to work with representatives of the copper mining industry to write a coordinated plan for further model development and application that will provide economic benefits to the industry and the nation.

  5. Sub-micronewton thrust measurements of indium field emission thrusters

    NASA Technical Reports Server (NTRS)

    Ziemer, J. K.

    2003-01-01

    The performance of three indium field emission thrusters (In-FETs) developed by the Austrian Research Center Seibersdorf (ARCS) have been measured up to 200 muN, 2 mA, and 20 W using a submicronewton resolution thrust stand.

  6. Visible light electroluminescent diodes of indium-gallium phosphide

    NASA Technical Reports Server (NTRS)

    Clough, R.; Richman, D.; Tietjen, J.

    1970-01-01

    Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

  7. p-type conduction in sputtered indium oxide films

    SciTech Connect

    Stankiewicz, Jolanta; Alcala, Rafael; Villuendas, Francisco

    2010-05-10

    We report p-type conductivity in intrinsic indium oxide (IO) films deposited by magnetron sputtering on fused quartz substrates under oxygen-rich ambient. Highly oriented (111) films were studied by x-ray diffraction, optical absorption, and Hall effect measurements. We fabricated p-n homojunctions on these films.

  8. Detection of accessory spleens with indium 111-labeled autologous platelets

    SciTech Connect

    Davis, H.H., II; Varki, A.; Heaton, W.A.; Siegel, B.A.

    1980-01-01

    In two patients with recurrent immune thrombocytopenia, accessory splenic tissue was demonstrated by radionuclide imaging following administration of indium 111-labeled autologous platelets. In one of these patients, no accessory splenic tissue was seen on images obtained with technetium 99m sulfur colloid. This new technique provides a simple means for demonstrating accessory spleens and simultaneously evaluating the life-span of autologous platelets.

  9. Indium-111 labeled anti-melanoma monoclonal antibodies

    DOEpatents

    Srivastava, S.C.; Fawwaz, R.A.; Ferrone, S.

    1984-04-30

    A monoclonal antibody to a high molecular weight melanoma-associated antigen was chelated and radiolabeled with indium-111. This material shows high affinity for melanoma and thus can be used in the detection, localization and imaging of melanoma. 1 figure.

  10. Room temperature synthesis of copper indium diselenide in non-aqueous solution using an organoindium reagent

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Andras, Maria T.; Bailey, Sheila G.; Duraj, Stan A.

    1992-01-01

    A novel two-phase synthesis of CuInSe2 at 25 C from Cu2Se and Cp3In in 4-methylpyridine has been discovered. Characterization of the material produced shows it to be platelet-shaped crystallites with an average particle size of 10 microns, less than 2 percent C and H, with a small amount of unidentified crystalline impurity. The results demonstrate that it is possible to produce from solution a material that is ordinarily synthesized in bulk or films at much higher temperatures or using extraneous reagents and/or electrons. The use of a solid-state reagent as a starting material which is converted to another solid-state compound by an organometallic reagent has tremendous potential to produce precursors for a wide range of solid-state materials of interest to the electronics, defense, and aerospace communities.

  11. Light Induced Junction Modification in Copper Indium-Diselenide and Other Thin-Film Solar Cells.

    NASA Astrophysics Data System (ADS)

    Potter, Richard Robert

    The current-voltage characteristics of many illuminated heterostructure diodes are shifted to lower voltages than those expected from the superposition principle. The practical result is often a low open circuit voltage. The voltage shift for CdS/CuInSe(,2) solar cells is as much as 100 mV at room temperature. These cells are studied in detail and a heterojunction model proposed for both dark and light conditions. Dependence of the shift on light intensity, wavelength, temperature, and time after the light is blocked is investigated. Thermal heating of the junction by the light is discounted in favor of optical excitation of interfacial states. The states trap charge under illumination and modify the effective barrier to carrier transport. Unipolar or dipolar electric charge densities near the interface the order of 10('12) cm('-2) are sufficient to explain the observed shift of 100 mV. The shift increases with light intensity until near 100 mW/cm('2) where the charging of states approach saturation. The charging effect is due to a mixture of states in the CuInSe(,2) bandgap which dominate the shift and states in the CdS which result in a second order spectral dependence. The relaxation to the equilibrium dark condition indicates that many states with long time constants are involved.

  12. Characteristics of Copper Indium Diselenide Thin Films Formed on Flexible Substrates by Electrodeposition

    NASA Astrophysics Data System (ADS)

    Huang, Chien-Jung; Su, Yan-Kuin; Chen, Kan-Lin; Lai, M. Y.

    2005-11-01

    A CuInSe2 (CIS) thin film was electrodeposited (ED) on a Au-coated plastic substrate using an aqueous acidic solution containing 1 mM CuCl2, 5 mM InCl3, 1 mM SeO2 and 1 M triethanolamine (TEA) adjusted to pH 1.65. With this new technology, the quality of ED-CIS thin film can be suitably improved with 0.1 M Na citrate to control the growth solution. The composition of the CIS thin film was “Cu:In:Se=25.6%:25.0%:49.4%” prepared at -1.5 V (SCE) after annealing at 150°C for 1 h in a N2 atmosphere. Neither the CIS thin film nor the plastic substrate was found to have cracked after the heat treatment. The ED-CIS thin-film quality demonstrates its potential in the fabrication of a flexible CIS-based solar cell.

  13. Impact of secondary barriers on copper-indium-gallium-selenide solar-cell operation

    NASA Astrophysics Data System (ADS)

    Pudov, Alexei O.

    Thin-film solar cells based on CuInSe2 (CIS) absorber with a band gap of Eg = 1.0 eV and also based on CuIn1-x GaxSe2 (CIGS) alloy absorbers with a band-gap range of Eg = 1.0--1.67 eV are investigated in this work. Intermediate "buffer" semiconductor layers in p-n junctions of CIGS solar cells often improve photodiode properties of the devices. The primary goal of the thesis is to study secondary barriers in the conduction band at the buffer/absorber interface, which may limit current transport and thus reduce the efficiency of the solar cells. The secondary goal is to explore alternative wide-bandgap buffers in CIGS cell structures. CIGS cells with standard CdS buffer layers, and alternative ZnS(O,OH) and InS(O,OH) buffer layers were studied. CdS/CuIn1-xGaxSe2 solar cells with variable Ga content have a range of conduction-band offsets (DeltaEc) in the junction from moderately positive (spike offsets) in CdS/CuInSe2 to moderately negative (cliff offsets) in CdS/CuGaSe 2. Moderate conduction-band spikes in CdS/CIS and low-Ga CdS/CIGS are expected to cause distortions in diode current-voltage (J-V) curves of such solar cells under "red" illumination (hnu < Eg(buffer)); no J-V distortions are expected for high-Ga CdS/CIGS with cliff offsets. These predictions were confirmed in experiments: the distortions were absent for cells with Eg above 1.2--1.3 eV, at which CdS/CIGS DeltaE c is near zero. Experiments and numerical simulations showed that one approach to reduce secondary barriers and J-V distortions in low-Ga high-spike cells is to thin the buffer layer(s). Blue photons (hnu above Eg(buffer)) in the solar spectrum induce photoconductivity in the otherwise compensated buffers, which also results in lowering of the secondary barriers. It was shown that CIGS cells with CdS, InS(O,OH), and ZnS(O,OH) buffers have a similar response to "blue" photons: J-V distortion, if present under red light, is reduced or entirely disappears with blue-light exposure within minutes. The distortion re-appearance without blue light is the order of a thousand times slower. Using wider-gap buffers, such as InS(O,OH) and ZnS(O,OH), was shown to produce higher photocurrents in solar cells. This photocurrent improvement is a central direction in the effort of further increasing efficiencies of thin-film solar cells.

  14. Liquid-Phase Deposition of Single-Phase Alpha-Copper-Indium-Diselenide

    NASA Technical Reports Server (NTRS)

    Cowen, J.; Lucas, L.; Ernst, F.; Pirouz, P.; Hepp, A.; Bailey, S.

    2005-01-01

    The success of exploratory missions in outer space often depends on a highly efficient renewable energy supply, as provided by solar cells. Figure 1 shows a well-known example: The robotic vehicle "Rover," constructed for NASA s "Mars Pathfinder" mission. The solar cells for such applications not only need to have high conversion efficiency, but must possess a high specific power, thus a high power output per unit mass. Since future missions will demand for large aggregates of solar cells and space flights are expensive, the solar cells must furthermore be available at low costs (per unit power output) and - very important in outer space - have a long lifetime and a high resistance against structural damage introduced by irradiation with high-energy electrons and protons.

  15. Structure, electric and dielectric studies of indium-substituted magnesium copper manganese ferrites

    NASA Astrophysics Data System (ADS)

    Kaiser, M.

    2011-02-01

    The structure, electric and dielectric properties of In-substituted Mg-Cu-Mn ferrites having the general formula of Mg 0.9Cu 0.1Mn 0.1In xFe 1.9- xO 4 with 0.0≤ x≤0.4 have been studied. X-ray diffraction (XRD) patterns of the samples indicated the formation of single-phase cubic spinel structure up to 0.2 and mixed phase (cubic and tetragonal phase) for samples x≥0.3. The relation of conductivity with temperature revealed a semiconductor to semimetal behavior as In +3 concentration increases. Variation in the universal exponent s with temperature indicates the presence of two hopping conduction mechanisms: the correlated barrier hopping (CHB) at low In +3 content x≤0.1 and small-polaron (SP) hopping at In +3 content x≥0.2. The variation in dielectric permittivity ( ε‧, ε″) with temperature at different frequencies shows a normal behavior for the studied compounds, while the variation in dielectric loss tangent with frequency at different temperatures shows abnormal behavior with more than relaxation peak. The conduction mechanism used in the present study has been discussed in the light of electron exchange between Fe 3+ and Fe 2+ ions and hole hopping between Mn 2+ and Mn 3+ ions at the octahedral B-sites.

  16. An investigation of reactive sputtering for depositing copper indium diselenide films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Thornton, J. A.; Cornog, D. G.; Hall, R. B.; Shea, S. P.; Meakin, J. D.

    Sputtering, particularly using magnetron methods, offers great potential for depositing films over large areas at the production volumes required for terrestrial photovoltaic applications. Single phase chalcopyrite CuInSe2 coatings have been successfully deposited by dc reactive cosputtering from Cu and In planar magnetron sources operated in an Ar+H2Se working gas. Studies of coatings deposited with various Cu and In sputtering rates and substrate temperatures indicate that the formation of near-stoichiometric coatings is aided at elevated temperatures by a re-emission mechanism which removes excess In. Photovoltaic test devices formed by evaporating CdS onto the sputtered CuInSe2 have yielded short circuit currents of about 33 mA/sq cm and efficiencies of about 4 percent.

  17. Transient thermoreflectance from graphene composites with matrix of indium and copper

    NASA Astrophysics Data System (ADS)

    Zheng, H.; Jagannadham, K.

    2013-03-01

    Transient thermoreflectance was measured from In and In-graphene composite films pressed on to different substrates that include Si, GaAs, Cu and Cu-graphene composite. Measurements were also made from Al film deposited on substrates of Cu and Cu-graphene composite. The experimental results were modeled using solution to the thermal diffusion equation to determine the thermal conductivity of the phases and thermal conductance of the interface. The In-graphene and Cu-graphene composites are found to spread the heat more rapidly than In and Cu, respectively. The interface thermal conductance of In or In-graphene film pressed on to Cu was found to be smaller than the observed values for metal-metal contacts reported in the literature although higher than the value observed for the interface between Pb-Sn eutectic solder alloy bonded to Cu. The interface thermal conductance between Al film deposited on mechanically polished Cu or Cu-graphene composite is also found to be much lower than the value observed previously. The smaller value of interface thermal conductance of either In or In-gr or Al film on different substrates is explained by absence of atomic level bonding, presence of rough surfaces with incomplete contact and oxygen or water vapor at the interface.

  18. Thermochemistry and phase diagram studies in the copper(indium,gallium)selenium system

    NASA Astrophysics Data System (ADS)

    Ider, Muhsin

    Polycrystalline Cu(In,Ga)Se2 and related semiconductors show great potential as alternative materials in production of high efficiency solar cells. This dissertation reports the experimental determination of Gibbs energy changes and phase diagram calculations for selected sections of the Cu-Ga-In-Se system. The Gibbs energy changes were measured with solid-state electrochemical cells and this data along with selected literature data were assessed and model parameters suggested. The homogeneity range of beta-Cu2-xSe was measured by coulometric titration and the thermodynamic properties for defect species estimated. The composition difference between the Se-rich and the Cu-rich boundaries was measured at 900K. A defect model was developed based on vacancy formation on the Cu sublattice. The gas phase equilibrium data for Cu-Se system and the results of a recent assessment of selenium unary system were used to predict defect concentrations. A thermodynamic description of the Cu2Se-In2Se 3 was obtained by optimization of the available phase equilibrium and thermodynamic information along with the direct results of EMF experiments. The Gibbs energy of formation of alpha-CuInSe2 was directly measured by a solid oxide galvanic cell experiment. The transformation enthalpy and Gibbs energy data for CuIn3Se5 and CuIn5Se 8 were estimated. The Redlich-Kister model with a 3-coefficient expression was employed to define the Gibbs energy of the liquid phase. The intermediate beta-CuIn 3Se5 and gamma-CuIn5Se8 phases were modeled with a 2-coefficient expansion of the Redlich-Kister model. The alpha and delta modifications of CuInSe2 phases were modeled with a specific sublattice model. A reasonable agreement between the model calculated values and the thermodynamic phase equilibrium data was achieved. The thermochemistry and phase diagram of GaSe system was critically studied. The activity of Ga was measured along the liquidus between 800--1000K. Selected invariant phase transition temperatures were measured and transition enthalpies were calculated from the EMF measurements. A self-consistent thermodynamic data was obtained. The associated and sublattice models were used to represent the Gibbs energy of the liquid and alpha-Ga2Se3 phases, respectively. The Gibbs energy of formation of CuGaSe2 was measured by an EMT experiment. The phase diagram of Cu-Ga system was calculated and the liquid phase Ga activity measurements was measured for 2 Ga rich compositions.

  19. Copper indium diselenide nanowire arrays by electrodeposition in porous alumina templates

    NASA Astrophysics Data System (ADS)

    Phok, Sovannary; Rajaputra, Suresh; Singh, Vijay P.

    2007-11-01

    A simple template assisted approach for fabricating I-III-VI semiconductor nanowire arrays is presented. Vertically aligned arrays of CuInSe2 (CIS) nanowires of controllable diameter and length were synthesized by pulse cathodic electrodeposition from a novel acidic electrolyte solution into anodized alumina (AAO) templates, followed by annealing at 220 °C in vacuum. Scanning electron microscopy revealed that the nanowires were dense and compact. Depending on the dimensions of the starting AAO template, the diameters ranged from 5 to 40 nm and the lengths ranged from 600 nm to 5 µm the grain size was estimated to be less than 5 nm. The composition of the nanowires was analyzed by energy dispersive x-ray (EDX) spectroscopy, and was found to be close to stoichiometric CuInSe2 within the limit of the resolution of the EDX technique. High resolution transmission electron microscopy and x-ray diffraction revealed high purity CuInSe2 nanowires with a preferred [112] orientation.

  20. Photoactive nanocrystals by low-temperature welding of copper sulfide nanoparticles and indium sulfide nanosheets.

    PubMed

    Lim, Hui Min; Tan, Jia Yi; Batabyal, Sudip K; Magdassi, Shlomo; Mhaisalkar, Subodh G; Wong, Lydia H

    2014-12-01

    We successfully utilize the concept of coalescence and room-temperature sintering to prepare morphologically different nanoparticles. n-Type chalcogenide (CuIn5 S8 ) nanocrystals are synthesized at room temperature by simple mixing of oppositely charged precursor nanoparticles. The coalescence of polycation-coated CuS nanoparticles and negatively charged In2 S3 nanoplates is driven by close contact of the particles due to electrostatic interactions. Analysis by X-ray diffraction, transmission electron microscopy (TEM) imaging, and Raman spectroscopy confirms the formation of single-phase CuIn5 S8 without traceable secondary phase. In a photovoltaic device, the use of the coalesced particles yields a power conversion efficiency of 1.8%.

  1. Controlling surface defects of non-stoichiometric copper-indium-sulfide quantum dots.

    PubMed

    Park, Jae Chul; Nam, Yoon Sung

    2015-12-15

    Quantum dots (QDs) can be used for a wide range of practical applications including solar energy conversion, light-emitting display, bio-imaging, and sensing. However, toxic heavy metal elements of Pb- and Cd-based QDs cause potential environmental problems and limit their wide applicability. To overcome this limitation, CuInS2 (CIS) QDs, which have a bulk bandgap energy of 1.5eV and relatively high absorptivity, can be a good alternative. However the photoluminescence quantum yield (PLQY) of CIS QDs is too low for practical applications. Here we investigate the effects of experimental factors in the solution synthesis of CIS/ZnS QDs on intrinsic defects and surface defects from photoluminescence (PL) analysis. A heating-up method is used with dodecanethiol as a sulfur source, a ligand, and a medium. The Cu-to-In feeding ratio is changed to control the PL spectrum in the range of visible to near infrared (NIR) frequencies. The PLQY is increased above 40% in all of the ranges through ZnS shell passivation and additional process optimization (e.g., controlled cooling rate and additional feeding of In(3+) ion precursor). This work demonstrates the role of intrinsic defects in PL and the importance of suppressing the formation of the surface defects to increase the PLQY.

  2. Controlling surface defects of non-stoichiometric copper-indium-sulfide quantum dots.

    PubMed

    Park, Jae Chul; Nam, Yoon Sung

    2015-12-15

    Quantum dots (QDs) can be used for a wide range of practical applications including solar energy conversion, light-emitting display, bio-imaging, and sensing. However, toxic heavy metal elements of Pb- and Cd-based QDs cause potential environmental problems and limit their wide applicability. To overcome this limitation, CuInS2 (CIS) QDs, which have a bulk bandgap energy of 1.5eV and relatively high absorptivity, can be a good alternative. However the photoluminescence quantum yield (PLQY) of CIS QDs is too low for practical applications. Here we investigate the effects of experimental factors in the solution synthesis of CIS/ZnS QDs on intrinsic defects and surface defects from photoluminescence (PL) analysis. A heating-up method is used with dodecanethiol as a sulfur source, a ligand, and a medium. The Cu-to-In feeding ratio is changed to control the PL spectrum in the range of visible to near infrared (NIR) frequencies. The PLQY is increased above 40% in all of the ranges through ZnS shell passivation and additional process optimization (e.g., controlled cooling rate and additional feeding of In(3+) ion precursor). This work demonstrates the role of intrinsic defects in PL and the importance of suppressing the formation of the surface defects to increase the PLQY. PMID:26319334

  3. Growth and characterization of copper indium diselenide polycrystalline thin films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Engelmann, Michael G.

    The incorporation of sulfur into CuInSe2 thin films was quantitatively investigated to establish a scientific and engineering basis for the fabrication of homogeneous and compositionally graded CuIn(Se,S)2 thin films. The motivation for this work was to develop a means of controlling the band gap for this class of materials to achieve improved performance in photovoltaic devices. The approach taken was the reaction of thin film Cu/In layers and CuInSe2 thin films in H2S and/or H2Se gasses at atmospheric pressure. The reaction of Cu/In layers in a mixture of H2S and H 2Se as a function of gas phase composition was investigated to quantify the relationship between the gas and solid phase compositions in the formation of homogeneous CuIn(Se,S)2 thin films. A reaction model, accounting for mixing and the presence of oxygen, was developed and regressed to the experimental data. This work then led to the development of a phenomenological model for the inhomogeneous incorporation of sulfur into CuInSe2 thin films by a surface reaction followed by diffusion. X-ray diffraction line profiles, grain size distribution, and grain boundary width were used in conjunction with a quantitative diffusion model to estimate the bulk and grain boundary diffusion of sulfur into CuInSe2. Diffusion coefficients were determined at multiple temperatures and activation energies were estimated. The analysis was also applied to the diffusion of CdS into CdTe that occurs during the post deposition thermochemical treatments that are necessary to achieve high performance CdTe solar cells. Bulk and grain boundary diffusion coefficients and activation energies for CdS-CdTe were estimated. Based on the analysis of both equilibrium chemistry and diffusion, a well defined process for the fabrication of homogeneous and graded CuIn(Se,S) 2 thin films was developed. This process provides a method of band gap engineering that has application in both the fabrication of wide band gap devices for use in tandem solar cells and the control of compositional grading for use in graded band gap devices.

  4. Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals

    DOEpatents

    Ciszek, Theodore F.

    1987-01-01

    A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

  5. Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals

    DOEpatents

    Ciszek, T.F.

    1984-11-29

    A process for preparing CuInSe/sub 2/ crystals includes melting a sufficient quantity of B/sub 2/O/sub 2/ along with stochiometric quantities of Cu, In, and Se in a crucible in a high-pressure atmosphere of inert gas to encapsulate the CuInSe/sub 2/ melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2% over the stochiometric quantity is preferred to make up for small amounts of Se lost in the process. The melt can then be cooled slowly to form the crystal as direct solidification, or the crystal can be grown by inserting a seed crystal through the B/sub 2/O/sub 3/ encapsulate into contact with the CuInSe/sub 2/ melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

  6. Sulfur incorporation into copper indium diselenide single crystals through annealing in hydrogen sulfide

    SciTech Connect

    Titus, Jochen; Birkmire, Robert W.; Hack, Christina; Mueller, Georg; McKeown, Patrick

    2006-02-15

    CuInSe{sub 2} crystals were sulfurized in a H{sub 2}S-Ar gas mixture at 575 deg. C. The focus was on the resulting mass transport, in particular, on the interdiffusion of Se and S. Experiments were done for various sulfurization times, and the resulting S distribution was measured by Auger electron spectroscopy sputter depth profiling and analyzed with the Boltzmann-Matano method. A one-dimensional diffusion process had shaped the S distribution in these crystals. The respective diffusion coefficient was on the order of 10{sup -16} cm{sup 2}/s, and it varied only slightly with the S content in CuIn(Se,S){sub 2}.

  7. Liquid Phase Deposition of Single-Phase Alpha-Copper-Indium-Diselenide

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Bailey, S.; Cowen, Jonathan; Lucas, L.; Ernst, Frank; Pirouz, P.

    2004-01-01

    The success of exploratory missions in outer space often depends on a highly efficient renewable energy supply, as provided by solar cells. Since future missions will demand large aggregates of solar cells, and space flight is expensive, the solar cells must furthermore be available at low costs and have a long lifetime and high resistance against structural damage introduced by irradiation with high energy electrons and protons. The photovoltaic materials that are presently available only partly fulfill all these requirements. Therefore, we propose to explore a new method for fabricating thin-films for cost-efficient solar cells with very high specific power,high irradiation resistance and long lifetime based on the alpha-phase of the Cu-In-Se system "alpha-CIS."

  8. Reclaim System Design of Indium Tin Oxide Thin-Film Removal from Color Filters of Displays

    NASA Astrophysics Data System (ADS)

    Pa, Pai-Shan

    2008-09-01

    A newly design precision reclaim system using electrochemical machining as an etching process for indium tin oxide (ITO) thin-film removal from the color filter surface of a displays is presented. Through the ultra precise etching of the nanostructure, the semiconductor industry can effectively recycle defective products, thereby reducing production costs. A large gyration diameter of a cathode combined with a small gap width between the cathode and a workpiece takes less time for the same amount of ITO removed. An adequate feed rate of color filters combined with a sufficient electric power produces fast machining. Pulsed direct current and higher rotational speed of the cathode can improve the effects of dregs discharge and are advantageous to be combined with a high feed rate of workpieces. Electrochemical machining only requires a short time to easily and cleanly remove ITO films.

  9. Cobalt distribution during copper matte smelting

    NASA Astrophysics Data System (ADS)

    Kho, T. S.; Swinbourne, D. R.; Lehner, T.

    2006-04-01

    Many smelter operators subscribe to the “precautionary principle” and wish to understand the behavior of the metals and impurities during smelting, especially how they distribute between product and waste phases and whether these phases lead to environmental, health, or safety issues. In copper smelting, copper and other elements are partitioned between copper matte, iron silicate slag, and possibly the waste gas. Many copper concentrates contain small amounts of cobalt, a metal of considerable value but also of some environmental interest. In this work, the matte/slag distribution ratio (weight percent) of cobalt between copper matte (55 wt pct) and iron silicate slag was thermodynamically modeled and predicted to be approximately 5. Experiments were performed using synthetic matte and slag at 1250 °C under a low oxygen partial pressure and the distribution ratio was found to be 4.3, while between industrial matte and slag, the ratio was found to be 1.8. Both values are acceptably close to each other and to the predicted value, given the errors inherent in such measurements. The implications of these results for increasingly sustainable copper production are discussed.

  10. Cross-current leaching of indium from end-of-life LCD panels.

    PubMed

    Rocchetti, Laura; Amato, Alessia; Fonti, Viviana; Ubaldini, Stefano; De Michelis, Ida; Kopacek, Bernd; Vegliò, Francesco; Beolchini, Francesca

    2015-08-01

    Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2M sulfuric acid at 80°C for 10min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85-90%, and with 6 steps it was about 50-55%. Indium concentration in the leachate was about 35mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO2 (with 10 steps we assessed that the emission of about 90kg CO2-Eq. could be avoided) thanks to the recovery of indium. This new strategy represents a useful approach for secondary production of indium from waste LCD panels.

  11. Plasma Treatment to Remove Carbon from Indium UV Filters

    NASA Technical Reports Server (NTRS)

    Greer, Harold F.; Nikzad, Shouleh; Beasley, Matthew; Gantner, Brennan

    2012-01-01

    The sounding rocket experiment FIRE (Far-ultraviolet Imaging Rocket Experiment) will improve the science community fs ability to image a spectral region hitherto unexplored astronomically. The imaging band of FIRE (.900 to 1,100 Angstroms) will help fill the current wavelength imaging observation hole existing from approximately equal to 620 Angstroms to the GALEX band near 1,350 Angstroms. FIRE is a single-optic prime focus telescope with a 1.75-m focal length. The bandpass of 900 to 1100 Angstroms is set by a combination of the mirror coating, the indium filter in front of the detector, and the salt coating on the front of the detector fs microchannel plates. Critical to this is the indium filter that must reduce the flux from Lymanalpha at 1,216 Angstroms by a minimum factor of 10(exp -4). The cost of this Lyman-alpha removal is that the filter is not fully transparent at the desired wavelengths of 900 to 1,100 Angstroms. Recently, in a project to improve the performance of optical and solar blind detectors, JPL developed a plasma process capable of removing carbon contamination from indium metal. In this work, a low-power, low-temperature hydrogen plasma reacts with the carbon contaminants in the indium to form methane, but leaves the indium metal surface undisturbed. This process was recently tested in a proof-of-concept experiment with a filter provided by the University of Colorado. This initial test on a test filter showed improvement in transmission from 7 to 9 percent near 900 with no process optimization applied. Further improvements in this performance were readily achieved to bring the total transmission to 12% with optimization to JPL's existing process.

  12. Use of and Occupational Exposure to Indium in the United States

    PubMed Central

    Hines, Cynthia J.; Roberts, Jennifer L.; Andrews, Ronnee N.; Jackson, Matthew V.; Deddens, James A.

    2015-01-01

    Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009–2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m3 for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH

  13. Use of and occupational exposure to indium in the United States.

    PubMed

    Hines, Cynthia J; Roberts, Jennifer L; Andrews, Ronnee N; Jackson, Matthew V; Deddens, James A

    2013-01-01

    Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009-2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m(3) for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH

  14. Use of and occupational exposure to indium in the United States.

    PubMed

    Hines, Cynthia J; Roberts, Jennifer L; Andrews, Ronnee N; Jackson, Matthew V; Deddens, James A

    2013-01-01

    Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009-2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m(3) for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH

  15. Indium gallium arsenide imaging with smaller cameras, higher-resolution arrays, and greater material sensitivity

    NASA Astrophysics Data System (ADS)

    Ettenberg, Martin H.; Cohen, Marshall J.; Brubaker, Robert M.; Lange, Michael J.; O'Grady, Matthew T.; Olsen, Gregory H.

    2002-08-01

    Indium Gallium Arsenide (InGaAs) photodiode arrays have numerous commercial, industrial, and military applications. During the past 10 years, great strides have been made in the development of these devices starting with simple 256-element linear photodiode arrays and progressing to the large 640 x 512 element area arrays now readily available. Linear arrays are offered with 512 elements on a 25 micron pitch with no defective pixels, and are used in spectroscopic monitors for wavelength division multiplexing (WDM) systems as well as in machine vision applications. A 320 x 240 solid-state array operates at room temperature, which allows development of a camera which is smaller than 25 cm3 in volume, weighs less than 100 g and uses less than 750 mW of power. Two dimensional focal plane arrays and cameras have been manufactured with detectivity, D*, greater than 1014 cm-(root)Hz/W at room temperature and have demonstrated the ability to image at night. Cameras are also critical tools for the assembly and performance monitoring of optical switches and add-drop multiplexers in the telecommunications industry. These same cameras are used for the inspection of silicon wafers and fine art, laser beam profiling, and metals manufacturing. By varying the Indium content, InGaAs photodiode arrays can be tailored to cover the entire short-wave infrared spectrum from 1.0 micron to 2.5 microns. InGaAs focal plane arrays and cameras sensitive to 2.0 micron wavelength light are now available in 320 x 240 formats.

  16. Characteristics and antimicrobial activity of copper-based materials

    NASA Astrophysics Data System (ADS)

    Li, Bowen

    In this study, copper vermiculite was synthesized, and the characteristics, antimicrobial effects, and chemical stability of copper vermiculite were investigated. Two types of copper vermiculite materials, micron-sized copper vermiculite (MCV) and exfoliated copper vermiculite (MECV), are selected for this research. Since most of the functional fillers used in industry products, such as plastics, paints, rubbers, papers, and textiles prefer micron-scaled particles, micron-sized copper vermiculite was prepared by jet-milling vermiculite. Meanwhile, since the exfoliated vermiculite has very unique properties, such as high porosity, specific surface area, high aspect ratio of laminates, and low density, and has been extensively utilized as a functional additives, exfoliated copper vermiculite also was synthesized and investigated. The antibacterial efficiency of copper vermiculite was qualitatively evaluated by the diffusion methods (both liquid diffusion and solid diffusion) against the most common pathogenic species: Escherichia coli (E. coli), Staphylococcus aureus (S. aureus), and Klebsiella pneumoniae (K. pneumoniae). The result showed that the release velocity of copper from copper vermiculite is very slow. However, copper vermiculite clearly has excellent antibacterial efficiency to S. aureus, K. pneumoniae and E. coli. The strongest antibacterial ability of copper vermiculite is its action on S. aureus. The antibacterial efficiency of copper vermiculite was also quantitatively evaluated by determining the reduction rate (death rate) of E. coli versus various levels of copper vermiculite. 10 ppm of copper vermiculite in solution is sufficient to reduce the cell population of E. coli, while the untreated vermiculite had no antibacterial activity. The slow release of copper revealed that the antimicrobial effect of copper vermiculite was due to the strong interactions between copper ions and bacteria cells. Exfoliated copper vermiculite has even stronger

  17. Copper Tolerance and Biosorption of Saccharomyces cerevisiae during Alcoholic Fermentation.

    PubMed

    Sun, Xiang-Yu; Zhao, Yu; Liu, Ling-Ling; Jia, Bo; Zhao, Fang; Huang, Wei-Dong; Zhan, Ji-Cheng

    2015-01-01

    At high levels, copper in grape mash can inhibit yeast activity and cause stuck fermentations. Wine yeast has limited tolerance of copper and can reduce copper levels in wine during fermentation. This study aimed to understand copper tolerance of wine yeast and establish the mechanism by which yeast decreases copper in the must during fermentation. Three strains of Saccharomyces cerevisiae (lab selected strain BH8 and industrial strains AWRI R2 and Freddo) and a simple model fermentation system containing 0 to 1.50 mM Cu2+ were used. ICP-AES determined Cu ion concentration in the must decreasing differently by strains and initial copper levels during fermentation. Fermentation performance was heavily inhibited under copper stress, paralleled a decrease in viable cell numbers. Strain BH8 showed higher copper-tolerance than strain AWRI R2 and higher adsorption than Freddo. Yeast cell surface depression and intracellular structure deformation after copper treatment were observed by scanning electron microscopy and transmission electron microscopy; electronic differential system detected higher surface Cu and no intracellular Cu on 1.50 mM copper treated yeast cells. It is most probably that surface adsorption dominated the biosorption process of Cu2+ for strain BH8, with saturation being accomplished in 24 h. This study demonstrated that Saccharomyces cerevisiae strain BH8 has good tolerance and adsorption of Cu, and reduces Cu2+ concentrations during fermentation in simple model system mainly through surface adsorption. The results indicate that the strain selected from China's stress-tolerant wine grape is copper tolerant and can reduce copper in must when fermenting in a copper rich simple model system, and provided information for studies on mechanisms of heavy metal stress.

  18. United States copper metal and scrap use and trade patterns, 1995‒2014

    USGS Publications Warehouse

    Goonan, Thomas G.

    2016-01-01

    This report considers changes to the copper and copper scrap industries of the United States. For the study period, 1995 through 2014, U.S. refined copper production from all sources (primary and secondary materials) decreased from 2.28 million metric tons (Mt) of copper to 1.05 Mt (a 54 percent decrease). During the same period, U.S. copper scrap net exports increased from 0.203 Mt to 0.737 Mt (a 263 percent increase and a compound annual growth rate of about 7.0 percent per year). Copper and copper scrap prices (in constant 2014 dollars) rose such that 2014 prices were about 48 percent greater than 1995 prices. From 1995 through 2014, Chinese imports of copper scrap from the United States grew from 0.061 Mt to 0.569 Mt (an increase of about 830 percent and a compound annual growth rate of about 12.5 percent per year). In 2011, Chinese imports of U.S. copper scrap peaked at 0.745 Mt of contained copper. In 1995, Chinese imports of U.S. copper scrap accounted for 17 percent of U.S. copper scrap exports. By 2014, Chinese imports accounted for 69 percent of U.S. copper scrap exports (by weight), and Chinese imports of U.S. copper scrap were valued at $1.45 billion.

  19. United States copper metal and scrap use and trade patterns, 1995‒2014

    USGS Publications Warehouse

    Goonan, Thomas G.

    2016-06-17

    This report considers changes to the copper and copper scrap industries of the United States. For the study period, 1995 through 2014, U.S. refined copper production from all sources (primary and secondary materials) decreased from 2.28 million metric tons (Mt) of copper to 1.05 Mt (a 54 percent decrease). During the same period, U.S. copper scrap net exports increased from 0.203 Mt to 0.737 Mt (a 263 percent increase and a compound annual growth rate of about 7.0 percent per year). Copper and copper scrap prices (in constant 2014 dollars) rose such that 2014 prices were about 48 percent greater than 1995 prices. From 1995 through 2014, Chinese imports of copper scrap from the United States grew from 0.061 Mt to 0.569 Mt (an increase of about 830 percent and a compound annual growth rate of about 12.5 percent per year). In 2011, Chinese imports of U.S. copper scrap peaked at 0.745 Mt of contained copper. In 1995, Chinese imports of U.S. copper scrap accounted for 17 percent of U.S. copper scrap exports. By 2014, Chinese imports accounted for 69 percent of U.S. copper scrap exports (by weight), and Chinese imports of U.S. copper scrap were valued at $1.45 billion.

  20. Copper Wire Bonding Concerns and Best Practices

    NASA Astrophysics Data System (ADS)

    Chauhan, Preeti; Zhong, Z. W.; Pecht, Michael

    2013-08-01

    Copper wire bonding of microelectronic parts has developed as a means to cut the costs of using the more mature technology of gold wire bonding. However, with this new technology, changes in the bonding processes as well as bonding metallurgy can affect product reliability. This paper discusses the challenges associated with copper wire bonding and the solutions that the industry has been implementing. The paper also provides information to enable customers to conduct qualification and reliability tests on microelectronic packages to facilitate adoption in their target applications.

  1. Mineral resource of the month: copper

    USGS Publications Warehouse

    ,

    2011-01-01

    The article provides information on copper and its various uses. It was the first metal used by humans and is considered as one of the materials that played an important role in the development of civilization. It is a major industrial metal because of its low cost, availability, electrical conductivity, high ductility and thermal conductivity. Copper has long been used in the circuitry of electronics and the distribution of electricity and is now being used in silicon-based computer chips, solar and wind power generation, and coinage.

  2. Cross-current leaching of indium from end-of-life LCD panels

    SciTech Connect

    Rocchetti, Laura; Amato, Alessia; Fonti, Viviana; Ubaldini, Stefano; De Michelis, Ida; Kopacek, Bernd; Vegliò, Francesco; Beolchini, Francesca

    2015-08-15

    Graphical abstract: Display Omitted - Highlights: • End-of-life LCD panels represent a source of indium. • Several experimental conditions for indium leaching have been assessed. • Indium is completely extracted with 2 M sulfuric acid at 80 °C for 10 min. • Cross-current leaching improves indium extraction and operating costs are lowered. • Benefits to the environment come from reduction of CO{sub 2} emissions and reagents use. - Abstract: Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2 M sulfuric acid at 80 °C for 10 min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100 ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85–90%, and with 6 steps it was about 50–55%. Indium concentration in the leachate was about 35 mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO{sub 2} (with 10 steps we assessed that the emission of about 90 kg CO{sub 2}-Eq. could be avoided) thanks to the recovery of indium

  3. Fibrotic gene expression coexists with alveolar proteinosis in early indium lung.

    PubMed

    Noguchi, Shuhei; Eitoku, Masamitsu; Kiyosawa, Hidenori; Suganuma, Narufumi

    2016-08-01

    Occupational inhalation of indium compounds can cause the so-called "indium lung disease". Most affected individuals show pulmonary alveolar proteinosis (PAP) and fibrotic interstitial lung disease. In animal experiments, inhalation of indium tin oxide or indium oxide has been shown to cause lung damage. However, the mechanisms by which indium compounds lead to indium lung disease remain unknown. In this study, we constructed a mouse model of indium lung disease and analyzed gene expression in response to indium exposure. Indium oxide (In2O3, 10 mg/kg, primary particle size <100 nm) was administered intratracheally to C57BL/6 mice (male, 8 weeks of age) twice a week for 8 weeks. Four weeks after the final instillation, histopathological analysis exhibited periodic acid-Schiff positive material in the alveoli, characteristic of PAP. Comprehensive gene expression analysis by RNA-Seq, however, revealed expression of fibrosis-related genes, such as surfactant associated protein D, surfactant associated protein A1, mucin 1, and collagen type I and III, was significantly increased, indicating that fibrotic gene expression progresses in early phase of indium lung. These data supported the latest hypothesis that PAP occurs as an acute phase response and is replaced by fibrosis after long-term latency.

  4. Solution-Processed Copper/Reduced-Graphene-Oxide Core/Shell Nanowire Transparent Conductors.

    PubMed

    Dou, Letian; Cui, Fan; Yu, Yi; Khanarian, Garo; Eaton, Samuel W; Yang, Qin; Resasco, Joaquin; Schildknecht, Christian; Schierle-Arndt, Kerstin; Yang, Peidong

    2016-02-23

    Copper nanowire (Cu NW) based transparent conductors are promising candidates to replace ITO (indium-tin-oxide) owing to the high electrical conductivity and low-cost of copper. However, the relatively low performance and poor stability of Cu NWs under ambient conditions limit the practical application of these devices. Here, we report a solution-based approach to wrap graphene oxide (GO) nanosheets on the surface of ultrathin copper nanowires. By mild thermal annealing, GO can be reduced and high quality Cu r-GO core-shell NWs can be obtained. High performance transparent conducting films were fabricated with these ultrathin core-shell nanowires and excellent optical and electric performance was achieved. The core-shell NW structure enables the production of highly stable conducting films (over 200 days stored in air), which have comparable performance to ITO and silver NW thin films (sheet resistance ∼28 Ω/sq, haze ∼2% at transmittance of ∼90%). PMID:26820809

  5. Synthesis and photophysical characterization of stable indium bacteriochlorins.

    PubMed

    Krayer, Michael; Yang, Eunkyung; Kim, Han-Je; Kee, Hooi Ling; Deans, Richard M; Sluder, Camille E; Diers, James R; Kirmaier, Christine; Bocian, David F; Holten, Dewey; Lindsey, Jonathan S

    2011-05-16

    Bacteriochlorins have wide potential in photochemistry because of their strong absorption of near-infrared light, yet metallobacteriochlorins traditionally have been accessed with difficulty. Established acid-catalysis conditions [BF(3)·OEt(2) in CH(3)CN or TMSOTf/2,6-di-tert-butylpyridine in CH(2)Cl(2)] for the self-condensation of dihydrodipyrrin-acetals (bearing a geminal dimethyl group in the pyrroline ring) afford stable free base bacteriochlorins. Here, InBr(3) in CH(3)CN at room temperature was found to give directly the corresponding indium bacteriochlorin. Application of the new acid catalysis conditions has afforded four indium bacteriochlorins bearing aryl, alkyl/ester, or no substituents at the β-pyrrolic positions. The indium bacteriochlorins exhibit (i) a long-wavelength absorption band in the 741-782 nm range, which is shifted bathochromically by 22-32 nm versus the analogous free base species, (ii) fluorescence quantum yields (0.011-0.026) and average singlet lifetime (270 ps) diminished by an order of magnitude versus that (0.13-0.25; 4.0 ns) for the free base analogues, and (iii) higher average yield (0.9 versus 0.5) yet shorter average lifetime (30 vs 105 μs) of the lowest triplet excited state compared to the free base compounds. The differences in the excited-state properties of the indium chelates versus free base bacteriochlorins derive primarily from a 30-fold greater rate constant for S(1) → T(1) intersystem crossing, which stems from the heavy-atom effect on spin-orbit coupling. The trends in optical properties of the indium bacteriochlorins versus free base analogues, and the effects of 5-OMe versus 5-H substituents, correlate well with frontier molecular-orbital energies and energy gaps derived from density functional theory calculations. Collectively the synthesis, photophysical properties, and electronic characteristics of the indium bacteriochlorins and free base analogues reported herein should aid in the further design of such

  6. High adherence copper plating process

    DOEpatents

    Nignardot, Henry

    1993-01-01

    A process for applying copper to a substrate of aluminum or steel by electrodeposition and for preparing an aluminum or steel substrate for electrodeposition of copper. Practice of the invention provides good adhesion of the copper layer to the substrate.

  7. Vermiculite decorated with copper nanoparticles: Novel antibacterial hybrid material

    NASA Astrophysics Data System (ADS)

    Drelich, Jaroslaw; Li, Bowen; Bowen, Patrick; Hwang, Jiann-Yang; Mills, Owen; Hoffman, Daniel

    2011-09-01

    Vermiculite decorated with copper nanoparticles is a new antibacterial material that was prepared in this study through ion-exchange process and hydrogen reduction. The replacement of magnesium ions in interlayer structure was carried out using concentrated copper sulfate solutions at elevated temperature. Copper ions were reduced to elemental copper at 400-600 °C using hydrogen as the reducing agent. During the reduction process copper diffused primarily to vermiculite surface regions and formed copper nanoparticles with a broad range of sizes, from ˜1 to 400 nm. Strong adhesion of copper nanoparticles to the vermiculite carrier makes this hybrid very stable and durable. The new vermiculite-metallic copper hybrid material shows strong antibacterial activity against Staphylococcus aureus at 37 °C. Vermiculite is an inexpensive mineral that is very stable under a wide range of industrial and environmental conditions, and extensively used as filler in fireproof materials, plastics, paints and lightweight concrete, so the addition of copper as an antibacterial agent opens new avenues for the application of vermiculite in consumer products and other areas.

  8. Copper-containing zeolite catalysts

    DOEpatents

    Price, G.L.; Kanazirev, V.

    1996-12-10

    A catalyst useful in the conversion of nitrogen oxides or in the synthesis of nitriles or imines from amines, is formed by preparing an intimate mechanical mixture of a copper (II)-containing species, such as CuO or CuCl{sub 2}, or elemental copper, with a zeolite having a pore mouth comprising 10 oxygen atoms, such as ZSM-5, converting the elemental copper or copper (II) to copper (I), and driving the copper (I) into the zeolite.

  9. Copper-containing zeolite catalysts

    DOEpatents

    Price, Geoffrey L.; Kanazirev, Vladislav

    1996-01-01

    A catalyst useful in the conversion of nitrogen oxides or in the synthesis of nitriles or imines from amines, formed by preparing an intimate mechanical mixture of a copper (II)-containing species, such as CuO or CuCl.sub.2, or elemental copper, with a zeolite having a pore mouth comprising 10 oxygen atoms, such as ZSM-5, converting the elemental copper or copper (II) to copper (I), and driving the copper (I) into the zeolite.

  10. Oxygen-free atomic layer deposition of indium sulfide

    DOEpatents

    Martinson, Alex B.; Hock, Adam S.; McCarthy, Robert; Weimer, Matthew S.

    2016-07-05

    A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately -30.degree. C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N'-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.

  11. Preparation and photoluminescence study of mesoporous indium hydroxide nanorods

    SciTech Connect

    Li, Changyu; Lian, Suoyuan; Liu, Yang; Liu, Shouxin; Kang, Zhenhui

    2010-02-15

    Mesoporous indium hydroxide nanorods were successfully synthesized by a mild one-step one-pot method. The obtained samples were characterized by X-ray diffraction, transmission electron microscopy with selected area electron diffraction, N{sub 2} adsorption, ultraviolet-visible absorption and photoluminescence, respectively. Transmission electron microscopy showed that there were some pores in the samples, which were mainly composed of rod-like shapes with length of 300 nm and diameter of 90 nm. N{sub 2} adsorption/desorption measurements confirmed that the prepared powder was mesoporous with average pore diameter of 3.1 nm. The ultraviolet-visible absorption spectroscopy analysis indicated that the band gap energy of the samples was 5.15 eV. Photoluminescence spectrum showed that there were two strong emissions under ultraviolet light irradiation. The growth mechanism of indium hydroxide nanorods and the role of cetyltrimethyl ammonium bromide were also discussed.

  12. Enhanced superconducting pairing interaction in indium-doped tin telluride

    SciTech Connect

    Erickson, A.S.; Chu, J.-H.; Toney, M.F.; Geballe, T.H.; Fisher, I.R.; /SLAC, SSRL /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.

    2010-02-15

    The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

  13. Enhanced superconducting pairing interaction in indium-doped tin telluride

    SciTech Connect

    Erickson, A.S.

    2010-05-03

    The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

  14. Determination of series resistance of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Weinberg, Irving

    1991-01-01

    The series resistance of a solar cell is an important parameter, which must be minimized to achieve high cell efficiencies. The cell series resistance is affected by the starting material, its design, and processing. The theoretical approach proposed by Jia, et. al., is used to calculate the series resistance of indium phosphide solar cells. It is observed that the theoretical approach does not predict the series resistance correctly in all cases. The analysis was modified to include the use of effective junction ideality factor. The calculated results were compared with the available experimental results on indium phosphide solar cells processed by different techniques. It is found that the use of process dependent junction ideality factor leads to better estimation of series resistance. An accurate comprehensive series resistance model is warranted to give proper feedback for modifying the cell processing from the design state.

  15. Enhanced superconducting pairing interaction in indium-doped tin telluride

    SciTech Connect

    Lavagnini, M.

    2010-02-24

    The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

  16. Improved Electroformed Structural Copper and Copper Alloys

    NASA Technical Reports Server (NTRS)

    Malone, G. A.; Hudson, W.; Babcock, B.; Edwards, R.

    1998-01-01

    Electroforming offers a superior means for fabricating internally cooled heat exchangers and structures subjected to thermal environments. Copper is deposited from many such applications because of the good thermal conductivity. It suffers from mediocre yield strength as a structural material and loses mechanical strength at intermediate temperatures. Mechanical properties similar to those of electroformed nickel are desired. Phase 1 examined innovative means to improve deposited copper structural performance. Yield strengths as high as 483 MPa (70 ksi) were obtained with useful ductility while retaining a high level of purity essential to good thermal conductivity. Phase 2 represents a program to explore new additive combinations in copper electrolytes to produce a more fine, equiaxed grain which can be thermally stabilized by other techniques such as alloying in modest degrees and dispersion strengthening. Evaluation of new technology - such as the codeposition of fullerness (diamond-like) particles were made to enhance thermal conductivity in low alloys. A test fire quality tube-bundle engine was fabricated using these copper property improvement concepts to show the superiority of the new coppers and fabrications methods over competitive technologies such as brazing and plasma deposition.

  17. Copper Delivery by Metallochaperone Proteins

    SciTech Connect

    Rosenzweig, A.C.

    2010-03-08

    Copper is an essential element in all living organisms, serving as a cofactor for many important proteins and enzymes. Metallochaperone proteins deliver copper ions to specific physiological partners by direct protein-protein interactions. The Atx1-like chaperones transfer copper to intracellular copper transporters, and the CCS chaperones shuttle copper to copper,zinc superoxide dismutase. Crystallographic studies of these two copper chaperone families have provided insights into metal binding and target recognition by metallochaperones and have led to detailed molecular models for the copper transfer mechanism.

  18. Indium-111 leukocyte scintigraphy in Wegener's granulomatosis involving the spleen

    SciTech Connect

    Morayati, S.J.; Fink-Bennett, D.

    1986-12-01

    Indium-111-labeled leukocyte scintigraphy was performed on a 44-yr-old man to exclude an occult abscess. Four- and twenty-four-hour images of the abdomen revealed splenic photopenia except for a rim of activity medially. A subsequent computed tomography (CT) study demonstrated necrosis or hemorrhage of the spleen except for a medial rim. Exploratory laparotomy demonstrated necrotizing vasculitis with granuloma formation consistent with Wegener's granulomatosis and a rim of viable splenic tissue corresponding to the radionuclide and CT studies.

  19. Indium Helps Strengthen Al/Cu/Li Alloy

    NASA Technical Reports Server (NTRS)

    Blackburn, Linda B.; Starke, Edgar A., Jr.

    1992-01-01

    Experiments on Al/Cu/Li alloys focus specifically on strengthening effects of minor additions of In and Cd. Indium-bearing alloy combines low density with ability to achieve high strength through heat treatment alone. Tensile tests on peak-aged specimens indicated that alloy achieved yield strength approximately 15 percent higher than baseline alloy. Alloy highly suitable for processing to produce parts of nearly net shape, with particular applications in aircraft and aerospace vehicles.

  20. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Metaferia, Wondwosen; Sun, Yan-Ting; Pietralunga, Silvia M.; Zani, Maurizio; Tagliaferri, Alberto; Lourdudoss, Sebastian

    2014-07-01

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III-V semiconductor layers on low cost and flexible substrates for solar cell applications.

  1. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    SciTech Connect

    Metaferia, Wondwosen; Sun, Yan-Ting Lourdudoss, Sebastian; Pietralunga, Silvia M.; Zani, Maurizio; Tagliaferri, Alberto

    2014-07-21

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.

  2. Effect of strain on indium incorporation in heteroepitaxial (indium, gallium) nitride nanomaterials

    NASA Astrophysics Data System (ADS)

    Ewoldt, David A.

    2011-12-01

    One of the challenges facing LED lighting today is the achievement of low-cost true white lighting. Ideally, multiple LEDs of different colors, blue, red and green, would be utilized in order to achieve white light. Currently, the quality of green LEDs is low when compared to the red and blue counterparts. Green emission from LEDs is difficult to achieve due to phase segregation that occurs during growth of the (In,Ga)N LED structure, which separates into compositions of high and low InN concentration and prevents the moderate composition required for green emission. On the nanoscale, strain effects in the (In,Ga)N material system give rise to shifts in optical properties. Relieving strain allows for the incorporation of additional indium nitride, which shifts the wavelength of light emitted by the structure. In order to control strain effects, growth templates were fabricated by several methods (PAA, FIB, EBL). A robust process for fabrication of pores down to 25 nm in diameter has been developed in order to investigate this effect. From this process, a template using e-beam lithography has been created and then growth of (In,Ga)N on this template in a metallorganic chemical vapor deposition system was performed. As (In,Ga)N grows from the GaN substrate, it is naturally strained due to the lattice mismatch. Lateral growth out of the templates relieves strain by allowing the rods to expand as they grow out of the prepared pores. The effect of the diameter of pores on the emission characteristics has been analyzed and a strong logarithmic trend was discovered correlating emission wavelength to pore diameter. In addition to allowing control over the wavelength of emission based on pore diameter, the process that has been developed and demonstrated will allow a distribution of pore sizes that could facilitate color mixing.

  3. Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide.

    PubMed

    Tanaka, Akiyo

    2004-08-01

    Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles. However, available data indicate these semiconductor materials can be toxic in animals. Although acute and chronic toxicity of the lung, reproductive organs, and kidney are associated with exposure to these semiconductor materials, in particular, chronic toxicity should pay much attention owing to low solubility of these materials. Between InAs, GaAs, and AlGaAs, InAs was the most toxic material to the lung followed by GaAs and AlGaAs when given intratracheally. This was probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials, such as indium, gallium, or aluminium, and not arsenic itself. It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect. Although there is no evidence of the carcinogenicity of InAs or AlGaAs, GaAs and InP, which are semiconductor materials, showed the clear evidence of carcinogenic potential. It is necessary to pay much greater attention to the human exposure of semiconductor materials.

  4. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    NASA Astrophysics Data System (ADS)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  5. Effect of preparation conditions on physic-chemical properties of tin-doped nanocrystalline indium oxide

    NASA Astrophysics Data System (ADS)

    Malinovskaya, T. D.; Sachkov, V. I.; Zhek, V. V.; Nefedov, R. A.

    2016-01-01

    In this paper the results of investigation of phase formation and change of concentration of free electrons (Ne) in indium tin oxide system during heat treatment of coprecipitated hydroxides of indium and tin from nitric and hydrochloric solutions and also, for comparison melts of salts nitrates by an alkaline reactant (NH4OH) are considered.The performed investigation allowed to set the optimal condition of preparation of polycrystalline tin-doped indium oxide with maximal electron concentration.

  6. Chemical Industry: A New Interdisciplinary Course for Secondary Schools.

    ERIC Educational Resources Information Center

    Nae, Nehemia; And Others

    1980-01-01

    Describes an advanced high school course which incorporates an industrial approach into the chemistry curriculum. Presents three case studies as examples taken from the local chemistry industry--the production of copper, bromine, and plastics. (CS)

  7. Determination of indium and tin by activation analysis using replacement substoichiometry.

    PubMed

    Obrusník, I

    1969-05-01

    A new method for the determination of indium by activation analysis has been developed. It is based on the replacement of indium from indium dithizonate (in carbon tetrachloride) by a substoichiometric amount of aqueous mercury(II) solution. Preliminary steps are the extraction of indium from alkaline cyanide solution with an excess of dithizone solution and washing the extract with buffer solution. The time necessary for the separation is 10-20 min. With this method indium can be determined by using either short ((116m)In, t(1 2 ) = 54 min) or long-lived radioisotopes ((114m)In, t(1 2 = 50 d). As by the reaction (112)Sn (n, gamma)) (113)Sn (119d) --> (113)In (104 min), indium-113m is formed, which has a different gamma-spectrum from that of indium-114m, the determination of both indium and tin is possible. The proposed method has been applied to the determination of indium and tin in granite and gallium.

  8. Method for enhancing the solubility of boron and indium in silicon

    DOEpatents

    Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

    2002-01-01

    A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

  9. Optimization of indium bump preparation in infrared focal plane array fabrication

    NASA Astrophysics Data System (ADS)

    Hou, Zhijin; Si, Junjie; Wang, Wei; Wang, Haizhen; Wang, Liwen

    2014-11-01

    Optimization of indium bump preparation in infrared focal plane array (IRFPA) fabrication is presented. Reasons of bringing defective pixels during conventional lift-off and cleanout process in fabrication of indium bump are discussed. IRFPAs are characterized by IRFPA test-bench. Results show that defective pixels of InSb IRFPA are owing to indium bumps connecting through indium residue on the surface of wafer. The characteristic and configuration of defective pixels of InSb IRFPA are given and analyzed. A method of reducing defective pixels through optimizing liftoff and cleanout process in InSb IRFPA is proposed. Results prove that this method is effective.

  10. Ultrasonic-Assisted Acid Leaching of Indium from Blast Furnace Sludge

    NASA Astrophysics Data System (ADS)

    Shen, Xingmei; Li, Liaosha; Wu, Zhaojin; Lü, Huihong; Lü, Jia

    2013-12-01

    Ultrasonic-assisted acid leaching was used to improve extraction of indium from blast furnace sludge. The effects of solid-liquid ratio, leaching temperature, and leaching time on extraction of indium were investigated and three leaching methods of high temperature acid leaching (HL), ultrasonic acid leaching (UL), and high temperature-ultrasonic acid leaching (HUL) were compared. The results show that extraction of indium increases with leaching time for all the methods. UL exhibits the lowest indium extraction. For HL, extraction of indium reaches 32.6 pct when the leaching time is 4 hours, and after 4 hours, the extraction increases slowly. Leaching temperature has a more positive effect on extraction of indium than ultrasonic. HUL can lead to a higher extraction of indium than high temperature acid leaching and UL, and extraction of indium reaches 40.4 pct when the leaching time is 2 hours. After 2 hours, no obvious increase occurs. HUL not only increases extraction of indium but also reduces the leaching time which can improve production efficiency.

  11. Copper recovery and cyanide oxidation by electrowinning from a spent copper-cyanide electroplating electrolyte.

    PubMed

    Dutra, A J B; Rocha, G P; Pombo, F R

    2008-04-01

    Copper-cyanide bleed streams arise from contaminated baths from industrial electroplating processes due to the buildup of impurities during continuous operation. These streams present an elevated concentration of carbonate, cyanide and copper, constituting a heavy hazard, which has to be treated for cyanide destruction and heavy metals removal, according to the local environmental laws. In the Brazilian Mint, bleed streams are treated with sodium hypochlorite, to destroy cyanide and precipitate copper hydroxide, a solid hazardous waste that has to be disposed properly in a landfill or treated for metal recovery. In this paper, a laboratory-scale electrolytic cell was developed to remove the copper from the bleed stream of the electroplating unit of the Brazilian Mint, permitting its reutilization in the plant and decreasing the amount of sludge to waste. Under favorable conditions copper recoveries around 99.9% were achieved, with an energy consumption of about 11 kWh/kg, after a 5-h electrolysis of a bath containing copper and total cyanide concentrations of 26 and 27 g/L, respectively. Additionally, a substantial reduction of the cyanide concentration was also achieved, decreasing the pollution load and final treatment costs. PMID:17728063

  12. Bioaccessibility and Solubility of Copper in Copper-Treated Lumber

    EPA Science Inventory

    Micronized copper (MC)-treated lumber is a recent replacement for Chromated Copper Arsenate (CCA) and Ammonium Copper (AC)-treated lumbers; though little is known about the potential risk of copper (Cu) exposure from incidental ingestion of MC-treated wood. The bioaccessibility o...

  13. Indium hydroxide to bixbyite-type indium oxide transition probed in situ by time resolved synchrotron radiation.

    PubMed

    Schlicker, L; Riedel, R; Gurlo, A

    2009-12-01

    The understanding of the transformation mechanism involved in the dehydroxylation reactions in the In-O-H system exhibits large controversy and discrepancy; it holds especially for the formation of the metastable nanosized intermediates as well as for the structural relation between corresponding phases. It was recently reported that indium oxohydroxide (InOOH) appears as an intermediate phase in the thermal dehydroxylation of nanoscaled In(OH)(3). Our in situ time resolved high energy synchrotron radiation experiments showed unambiguously that no intermediate crystalline or amorphous phases have been observed during the phase transition (dehydroxylation) from nanosized indium hydroxide to indium oxide. Under our experimental conditions, the c-In(OH)(3) to bixbyite-type In(2)O(3) transition was observed between 280 and 305 degrees C and the conversion completed around 305 degrees C without any observable intermediates. The formation of InOOH during the phase transition In(OH)(3)-->bixbyite-type In(2)O(3) can be ruled out. This finding is of high relevance and importance for the controllable synthesis of nanocrystalline In(2)O(3)-based materials.

  14. Selective leaching process for the recovery of copper and zinc oxide from copper-containing dust.

    PubMed

    Wu, Jun-Yi; Chang, Fang-Chih; Wang, H Paul; Tsai, Ming-Jer; Ko, Chun-Han; Chen, Chih-Cheng

    2015-01-01

    The purpose of this study was to develop a resource recovery procedure for recovering copper and zinc from dust produced by copper smelting furnaces during the manufacturing of copper-alloy wires. The concentrations of copper in copper-containing dust do not meet the regulation standards defined by the Taiwan Environmental Protection Administration; therefore, such waste is classified as hazardous. In this study, the percentages of zinc and copper in the dust samples were approximately 38.4% and 2.6%, respectively. To reduce environmental damage and recover metal resources for industrial reuse, acid leaching was used to recover metals from these inorganic wastes. In the first stage, 2 N of sulphuric acid was used to leach the dust, with pH values controlled at 2.0-3.0, and a solid-to-liquid ratio of 1:10. The results indicated that zinc extraction efficiency was higher than 95%. A selective acid leaching process was then used to recover the copper content of the residue after filtration. In the second stage, an additional 1 N of sulphuric acid was added to the suspension in the selective leaching process, and the pH value was controlled at 1.5-2.0. The reagent sodium hydroxide (2 N) was used as leachate at a pH greater than 7. A zinc hydroxide compound formed during the process and was recovered after drying. The yields for zinc and copper were 86.9-93.5% and 97.0-98.9%, respectively.

  15. Selective leaching process for the recovery of copper and zinc oxide from copper-containing dust.

    PubMed

    Wu, Jun-Yi; Chang, Fang-Chih; Wang, H Paul; Tsai, Ming-Jer; Ko, Chun-Han; Chen, Chih-Cheng

    2015-01-01

    The purpose of this study was to develop a resource recovery procedure for recovering copper and zinc from dust produced by copper smelting furnaces during the manufacturing of copper-alloy wires. The concentrations of copper in copper-containing dust do not meet the regulation standards defined by the Taiwan Environmental Protection Administration; therefore, such waste is classified as hazardous. In this study, the percentages of zinc and copper in the dust samples were approximately 38.4% and 2.6%, respectively. To reduce environmental damage and recover metal resources for industrial reuse, acid leaching was used to recover metals from these inorganic wastes. In the first stage, 2 N of sulphuric acid was used to leach the dust, with pH values controlled at 2.0-3.0, and a solid-to-liquid ratio of 1:10. The results indicated that zinc extraction efficiency was higher than 95%. A selective acid leaching process was then used to recover the copper content of the residue after filtration. In the second stage, an additional 1 N of sulphuric acid was added to the suspension in the selective leaching process, and the pH value was controlled at 1.5-2.0. The reagent sodium hydroxide (2 N) was used as leachate at a pH greater than 7. A zinc hydroxide compound formed during the process and was recovered after drying. The yields for zinc and copper were 86.9-93.5% and 97.0-98.9%, respectively. PMID:25191877

  16. Construction of a high efficiency copper adsorption bacterial system via peptide display and its application on copper dye polluted wastewater.

    PubMed

    Maruthamuthu, Murali Kannan; Nadarajan, Saravanan Prabhu; Ganesh, Irisappan; Ravikumar, Sambandam; Yun, Hyungdon; Yoo, Ik-Keun; Hong, Soon Ho

    2015-11-01

    For the construction of an efficient copper waste treatment system, a cell surface display strategy was employed. The copper adsorption ability of recombinant bacterial strains displaying three different copper binding peptides were evaluated in LB Luria-Bertani medium (LB), artificial wastewater, and copper phthalocyanine containing textile dye industry wastewater samples. Structural characteristics of the three peptides were also analyzed by similarity-based structure modeling. The best binding peptide was chosen for the construction of a dimeric peptide display and the adsorption ability of the monomeric and dimeric peptide displayed strains were compared. The dimeric peptide displayed strain showed superior copper adsorption in all three tested conditions (LB, artificial wastewater, and textile dye industry wastewater). When the strains were exposed to copper phthalocyanine dye polluted wastewater, the dimeric peptide display [543.27 µmol/g DCW dry cell weight (DCW)] showed higher adsorption of copper when compared with the monomeric strains (243.53 µmol/g DCW). PMID:26219270

  17. Copper as a biocidal tool.

    PubMed

    Borkow, Gadi; Gabbay, Jeffrey

    2005-01-01

    Copper ions, either alone or in copper complexes, have been used to disinfect liquids, solids and human tissue for centuries. Today copper is used as a water purifier, algaecide, fungicide, nematocide, molluscicide as well as an anti-bacterial and anti-fouling agent. Copper also displays potent anti-viral activity. This article reviews (i) the biocidal properties of copper; (ii) the possible mechanisms by which copper is toxic to microorganisms; and (iii) the systems by which many microorganisms resist high concentrations of heavy metals, with an emphasis on copper. PMID:16101497

  18. Fabricating Copper Nanotubes by Electrodeposition

    NASA Technical Reports Server (NTRS)

    Yang, E. H.; Ramsey, Christopher; Bae, Youngsam; Choi, Daniel

    2009-01-01

    Copper tubes having diameters between about 100 and about 200 nm have been fabricated by electrodeposition of copper into the pores of alumina nanopore membranes. Copper nanotubes are under consideration as alternatives to copper nanorods and nanowires for applications involving thermal and/or electrical contacts, wherein the greater specific areas of nanotubes could afford lower effective thermal and/or electrical resistivities. Heretofore, copper nanorods and nanowires have been fabricated by a combination of electrodeposition and a conventional expensive lithographic process. The present electrodeposition-based process for fabricating copper nanotubes costs less and enables production of copper nanotubes at greater rate.

  19. [Copper and the human body].

    PubMed

    Krízek, M; Senft, V; Motán, J

    1997-11-19

    Copper is one of the essential trace elements. It is part of a number of enzymes. Deficiency of the element is manifested by impaired haematopoesis, bone metabolism, disorders of the digestive, cardiovascular and nervous system. Deficiency occurs in particular in patients suffering from malnutrition, malabsorption, great copper losses during administration of penicillamine. Sporadically copper intoxications are described (suicidal intentions or accidental ingestion of beverages with a high copper content). Acute exposure to copper containing dust is manifested by metal fume fever. Copper salts can produce local inflammations. Wilson's disease is associated with inborn impaired copper metabolism. In dialyzed patients possible contaminations of the dialyzate with copper must be foreseen as well as the possible release of copper from some dialyzation membranes. With the increasing amount of copper in the environment it is essential to monitor the contamination of the environment.

  20. Targeting copper in cancer therapy: 'Copper That Cancer'.

    PubMed

    Denoyer, Delphine; Masaldan, Shashank; La Fontaine, Sharon; Cater, Michael A

    2015-11-01

    Copper is an essential micronutrient involved in fundamental life processes that are conserved throughout all forms of life. The ability of copper to catalyze oxidation-reduction (redox) reactions, which can inadvertently lead to the production of reactive oxygen species (ROS), necessitates the tight homeostatic regulation of copper within the body. Many cancer types exhibit increased intratumoral copper and/or altered systemic copper distribution. The realization that copper serves as a limiting factor for multiple aspects of tumor progression, including growth, angiogenesis and metastasis, has prompted the development of copper-specific chelators as therapies to inhibit these processes. Another therapeutic approach utilizes specific ionophores that deliver copper to cells to increase intracellular copper levels. The therapeutic window between normal and cancerous cells when intracellular copper is forcibly increased, is the premise for the development of copper-ionophores endowed with anticancer properties. Also under investigation is the use of copper to replace platinum in coordination complexes currently used as mainstream chemotherapies. In comparison to platinum-based drugs, these promising copper coordination complexes may be more potent anticancer agents, with reduced toxicity toward normal cells and they may potentially circumvent the chemoresistance associated with recurrent platinum treatment. In addition, cancerous cells can adapt their copper homeostatic mechanisms to acquire resistance to conventional platinum-based drugs and certain copper coordination complexes can re-sensitize cancer cells to these drugs. This review will outline the biological importance of copper and copper homeostasis in mammalian cells, followed by a discussion of our current understanding of copper dysregulation in cancer, and the recent therapeutic advances using copper coordination complexes as anticancer agents.

  1. Order on disorder: Copper phthalocyanine thin films on technical substrates

    SciTech Connect

    Peisert, H.; Schwieger, T.; Auerhammer, J. M.; Knupfer, M.; Golden, M. S.; Fink, J.; Bressler, P. R.; Mast, M.

    2001-07-01

    We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20{endash}50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. {copyright} 2001 American Institute of Physics.

  2. Evolution of a Heavy Metal Homeostasis/Resistance Island Reflects Increasing Copper Stress in Enterobacteria

    PubMed Central

    Staehlin, Benjamin M.; Gibbons, John G.; Rokas, Antonis; O’Halloran, Thomas V.; Slot, Jason C.

    2016-01-01

    Copper homeostasis in bacteria is challenged by periodic elevation of copper levels in the environment, arising from both natural sources and human inputs. Several mechanisms have evolved to efflux copper from bacterial cells, including the cus (copper sensing copper efflux system), and pco (plasmid-borne copper resistance system) systems. The genes belonging to these two systems can be physically clustered in a Copper Homeostasis and Silver Resistance Island (CHASRI) on both plasmids and chromosomes in Enterobacteria. Increasing use of copper in agricultural and industrial applications raises questions about the role of human activity in the evolution of novel copper resistance mechanisms. Here we present evidence that CHASRI emerged and diversified in response to copper deposition across aerobic and anaerobic environments. An analysis of diversification rates and a molecular clock model suggest that CHASRI experienced repeated episodes of elevated diversification that could correspond to peaks in human copper production. Phylogenetic analyses suggest that CHASRI originated in a relative of Enterobacter cloacae as the ultimate product of sequential assembly of several pre-existing two-gene modules. Once assembled, CHASRI dispersed via horizontal gene transfer within Enterobacteriaceae and also to certain members of Shewanellaceae, where the original pco module was replaced by a divergent pco homolog. Analyses of copper stress mitigation suggest that CHASRI confers increased resistance aerobically, anaerobically, and during shifts between aerobic and anaerobic environments, which could explain its persistence in facultative anaerobes and emergent enteric pathogens. PMID:26893455

  3. Copper in diet

    MedlinePlus

    ... at the Institute of Medicine recommends the following dietary intake for copper: Infants 0 to 6 months: 200 ... Institute of Medicine, Food and Nutrition Board. Dietary Reference ... and Zinc. National Academy Press . Washington, DC, 2001. ...

  4. Volatility of copper

    SciTech Connect

    Palmer, D.A.; Simonson, J.M.; Joyce, D.B.

    1996-08-01

    The relevant aqueous thermodynamics of copper and its oxides are evaluated and summarized with emphasis on solubility, hydrolysis, and complexation. The solubilities of metallic copper, solid cuprous and cupric oxides in steam measured by Pocock and Stewart in 1963 are discussed and the latter data are fitted in the form of established empirical equations and compared to other existing results. No other sources of data were found for the solubility of copper and cupric oxide in steam and even these data are very limited. Discussion of corresponding available solubility data on both oxide phases in liquid water is given. The possible effects of complexing agents are considered. A brief discussion is provided of the role of surface adsorption in determining the fate of dissolved copper in the boiler. 37 refs., 5 figs., 3 tabs.

  5. Thermal contact resistance across a copper-silicon interface

    SciTech Connect

    Khounsary, A.M.; Chojnowski, D.; Assoufid, L.; Worek, W.M.

    1997-10-01

    The issue of thermal contact resistance across metallic interfaces has been investigated for many situations over the past several decades. The application in the present case is contact cooling of high heat load optical substrates. High heat load x-ray mirrors and other optical components used at the Advanced Photon Source (APS) are either internally cooled or contact cooled. In the internally cooled mirrors, a coolant flows through passages configured in the optical substrate. In the contact-cooled case, cooling is provided by placing cooling plates in contact with the mirror to extract the heat. Here, an experimental setup to measure the thermal contact conductance across a silicon-copper (Si-Cu) interface is described, and the results obtained are presented. The resulting thermal contact resistance data are used in estimating the thermo-mechanical and optical performance of optical substrates cooled by interfaced copper cooling blocks. Several factors influence the heat transfer across solid interfaces. These include the material properties, interface pressure, flatness and roughness of the contacting surfaces, temperature, and interstitial material, if any. Results presented show the variation of thermal contact conductance as a function of applied interface pressure for a Cu-Si interface. Various interstitial materials investigated include indium foil, silver foil and a liquid eutectic (Ga-In-Sn). As expected, thermal contact resistance decreases as interface pressure increases, except in the case of the eutectic, in which it was nearly constant. The softer the interstitial material, the lower the thermal contact resistance. Liquid metal provides the lowest thermal contact resistance across the Cu-Si interface, followed by the indium foil, and then the silver foil.

  6. Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2000-01-01

    Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

  7. Pharmacokinetics of indium-111-labeled antimyosin monoclonal antibody in murine experimental viral myocarditis

    SciTech Connect

    Yamada, T.; Matsumori, A.; Watanabe, Y.; Tamaki, N.; Yonekura, Y.; Endo, K.; Konishi, J.; Kawai, C. )

    1990-11-01

    The pharmacokinetics of indium-111-labeled antimyosin monoclonal antibody Fab were investigated with use of murine experimental viral myocarditis as a model. The biodistribution of indium-111-labeled antimyosin antibody Fab on days 3, 5, 7, 14, 21 and 28 after encephalomyocarditis virus inoculation demonstrated that myocardial uptake increased significantly on days 5, 7 and 14 (maximum on day 7) in infected versus uninfected mice (p less than 0.001). In vivo kinetics in infected mice on day 7 demonstrated that the heart to blood ratio reached a maximum 48 h after the intravenous administration of indium-111-labeled antimyosin Fab, which was considered to be the optimal time for scintigraphy. The scintigraphic images obtained with indium-111-labeled antimyosin Fab demonstrated positive uptake in the cardiac lesion in infected mice. The pathologic study demonstrated that myocardial uptake correlated well with pathologic grades of myocardial necrosis. High performance liquid chromatography revealed the presence of an antigen-antibody complex in the circulation of infected mice after the injection of indium-111-labeled antimyosin Fab. This antigen bound to indium-111-labeled antimyosin Fab in the circulation might be whole myosin and this complex may decrease myocardial uptake and increase liver uptake. It is concluded that indium-111-labeled antimyosin monoclonal antibody Fab accumulates selectively in damaged heart tissue in mice with acute myocarditis and that indium-111-labeled antimyosin Fab scintigraphy may be a useful method for the visualization of acute myocarditis.

  8. Intracellular accumulation of indium ions released from nanoparticles induces oxidative stress, proinflammatory response and DNA damage.

    PubMed

    Tabei, Yosuke; Sonoda, Akinari; Nakajima, Yoshihiro; Biju, Vasudevanpillai; Makita, Yoji; Yoshida, Yasukazu; Horie, Masanori

    2016-02-01

    Due to the widespread use of indium tin oxide (ITO), it is important to investigate its effect on human health. In this study, we evaluated the cellular effects of ITO nanoparticles (NPs), indium chloride (InCl3) and tin chloride (SnCl3) using human lung epithelial A549 cells. Transmission electron microscopy and inductively coupled plasma mass spectrometry were employed to study cellular ITO NP uptake. Interestingly, greater uptake of ITO NPs was observed, as compared with soluble salts. ITO NP species released could be divided into two types: 'indium release ITO' or 'tin release ITO'. We incubated A549 cells with indium release ITO, tin release ITO, InCl3 or SnCl2 and investigated oxidative stress, proinflammatory response, cytotoxicity and DNA damage. We found that intracellular reactive oxygen species were increased in cells incubated with indium release ITO, but not tin release ITO, InCl3 or SnCl2. Messenger RNA and protein levels of the inflammatory marker, interleukin-8, also increased following exposure to indium release ITO. Furthermore, the alkaline comet assay revealed that intracellular accumulation of indium ions induced DNA damage. Our results demonstrate that the accumulation of ionic indium, but not ionic tin, from ITO NPs in the intracellular matrix has extensive cellular effects.

  9. Materials recovery from waste liquid crystal displays: A focus on indium.

    PubMed

    Fontana, Danilo; Forte, Federica; De Carolis, Roberta; Grosso, Mario

    2015-11-01

    In the present work the recovery of indium and of the polarizing film from waste liquid crystal displays was experimentally investigated in the laboratory. First of all, the polarizing film was removed by employing a number of different techniques, including thermal and chemical treatments. Leaching of indium was then performed with HCl 6N, which allowed solubilisation of approximately 90% In (i.e. 260 mg In per kg of glass) at room temperature, without shredding. Indium recovery from the aqueous phase was then investigated through solvent extraction with polyethylene glycol (PEG)-based aqueous biphasic systems. Indium extraction tests through the PEG-ammonium sulphate-water system were conducted as a function of PEG concentration, salt concentration and molecular weight of PEG, using 1,10 phenanthroline as a ligand. The experimental results demonstrated that indium partitioning between the bottom (salt-rich) and the top (PEG-rich) phase is quite independent on the composition of the system, since 80-95% indium is extracted in the bottom phase and 5-20% in the top phase; it was also found that when PEG concentration is increased, the ratio between the bottom and the upper phase volumes decreases, resulting in an increase of indium concentration in the bottom phase (at [PEG]=25% w/w, indium concentration in the bottom phase is ∼30% higher than the initial concentration before the extraction).

  10. Indium phosphide space solar cell research: Where we are and where we are going

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Flood, D. J.; Weinberg, Irving

    1995-01-01

    Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

  11. Detection of deep venous thrombosis by indium-111 leukocyte scintigraphy

    SciTech Connect

    D'Alonzo, W.A. Jr.; Alavi, A.

    1986-05-01

    Indium-111-labeled leukocyte ((/sup 111/In)WBC) scintigraphy has been used successfully for detection of inflammation. Occasionally, noninflammatory collections of white blood cells such as hematomas or hemorrhage have been localized. We report a case in which unsuspected femoral deep venous thrombosis was diagnosed on an (/sup 111/In)WBC leukocyte scan performed for detection of osteomyelitis. Readers are advised to avoid interpreting all vascular (/sup 111/In)WBC localization as necessarily infectious. This may be of particular significance in patients with vascular grafts.

  12. Indium phosphide solar cells for laser power beaming applications

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Landis, Geoffrey A.

    1992-01-01

    Lasers can be used to transmit power to photovoltaic cells. Solar cell efficiencies are enhanced significantly under monochromatic light, and therefore a laser beam of proper wavelength could be a very effective source of illumination for a solar array operating at very high efficiencies. This work reviews the modeling studies made on indium phosphide solar cells for such an application. These cells are known to be very radiation resistant and have a potential for high efficiency. Effects of cell series resistance, laser intensity, and temperature on cell performance have been discussed.

  13. Study of indium tin oxide films exposed to atomic axygen

    NASA Technical Reports Server (NTRS)

    Snyder, Paul G.; De, Bhola N.; Woollam, John A.; Coutts, T. J.; Li, X.

    1989-01-01

    A qualitative simulation of the effects of atomic oxygen has been conducted on indium tin oxide (ITO) films prepared by dc sputtering onto room-temperature substrates, by exposing them to an RF-excited oxygen plasma and characterizing the resulting changes in optical, electrical, and structural properties as functions of exposure time with ellipsometry, spectrophotometry, resistivity, and X-ray measurements. While the films thus exposed exhibit reduced resistivity and optical transmission; both of these effects, as well as partial crystallization of the films, may be due to sample heating by the plasma. Film resistivity is found to stabilize after a period of exposure.

  14. Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

    SciTech Connect

    Tripathi, Madhvendra Nath

    2015-06-24

    Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.

  15. Size-dependent electrical conductivity of indium zinc oxide deposited by RF magnetron sputtering.

    PubMed

    Heo, Young-Woo; Pearton, S J; Norton, D P

    2012-04-01

    We investigated the size-dependent electrical conductivities of indium zinc oxide stripes with different widths from 50 nm to 4 microm and with the same thickness of 50 nm deposited by RF magnetron sputtering. The size of the indium zinc oxide stripes was controlled by e-beam lithography. The distance of the two Ti/Au Ohmic electrodes along the indium zinc oxide stripes was kept constant at 25 microm. The electrical conductivity decreased as the size of the indium zinc oxide stripes decreased below a critical width (80 nm). The activation energy, derived from the electric conductivity versus temperature measurement, was dependent on the dimensions of indium zinc oxide stripes. These results can be understood as stemming from surface charge trapping from the absorption of oxygen and/or water vapor, which leads to an increase in the energy difference between the conduction energy band and the Fermi energy. PMID:22849102

  16. Anti-reflective conducting indium oxide layer on nanostructured substrate as a function of aspect ratio

    NASA Astrophysics Data System (ADS)

    Park, Hyun-Woo; Ji, Seungmuk; Lim, Hyuneui; Choi, Dong-won; Park, Jin-Seong; Chung, Kwun-Bum

    2016-09-01

    Antireflective conducting indium oxide layers were deposited using atomic layer deposition on a transparent nanostructured substrate grown using colloidal lithography. In order to explain the changes in the electrical resistivity and the optical transmittance of conducting indium oxide layers depending on various aspect ratios of the nanostructured substrates, we investigated the surface area and refractive index of the indium oxide layers in the film depth direction as a function of aspect ratio. The conformal indium oxide layer on a transparent nanostructured substrate with optimized geometry exhibited transmittance of 88% and resistivity of 7.32 × 10-4 Ω cm. The enhancement of electrical resistivity is strongly correlated with the surface area of the indium oxide layer depending on the aspect ratio of the nanostructured substrates. In addition, the improvement in transparency was explained by the gradual changes of the refractive index in the film depth direction according to the aspect ratio of the nanostructures.

  17. Recycling indium from waste liquid crystal display panel by vacuum carbon-reduction.

    PubMed

    He, Yunxia; Ma, En; Xu, Zhenming

    2014-03-15

    This study investigated the recovery of indium from waste liquid crystal display (LCD) panel using vacuum carbon-reduction. First of all, high purity In2O3 was investigated. The results indicated that indium can be reclaimed from In2O3 using vacuum carbon-reduction in thermodynamics and dynamics. The conditions of 1223K, 50wt% carbon addition, 30min, and 1Pa were confirmed as the optimal conditions for pure In2O3 and high purity indium could be selectively recovered on condensing zone. Based on this, the experiment of the recovery of indium from waste LCD power was performed. The best parameters were confirmed as 1223K and 1Pa with 30wt% carbon addition for 30min. The recovery rate of indium from LCD powder could reach to 90wt%. No hazardous materials produced in this process. Therefore, this technique provides the possibility of reutilization of LCD in an environmentally friendly way.

  18. Limitations of indium leukocyte imaging for the diagnosis of spine infections

    SciTech Connect

    Whalen, J.L.; Brown, M.L.; McLeod, R.; Fitzgerald, R.H. Jr. )

    1991-02-01

    The usefulness of indium-111 white blood cell (WBC) scintigraphy in the detection of spine sepsis was studied in 22 patients who had open or percutaneous biopsies for microbiologic diagnosis. The indium images in 18 patients with vertebral infection were falsely negative in 15 (83%) and truly positive in 3 (17%). All four patients with negative cultures and histology had true-negative scans. The indium-111 WBC imaging results yielded a sensitivity of 17%, a specificity of 100%, and an accuracy rate of 31%. Prior antibiotic therapy was correlated with a high incidence of false-negative scans and photon-deficient indium-111 WBC uptake. The usefulness of indium-111 WBC scintigraphy for the diagnosis of vertebral infection may be limited to those patients who have not been treated with antibiotics previously.

  19. The study of selective heating of indium bump in MCT infrared focal plane array

    NASA Astrophysics Data System (ADS)

    Zhang, Haiyan; Cao, Lan; Zhuang, Fulong; Hu, Xiaoning; Gong, Haimei

    2012-10-01

    Generally the electrical interconnectivity between The Mercury Cadmium Telluride (MCT) infrared focal plane array (IRFPA) device and circuit takes the flip chip technology using indium bump as a connection medium. In order to improve the reliability of the interconnectivity indium melting is a common packaging technique at present. This technique is called reflow soldering. The heating is transferred to the indium bump by heating the device and circuit. This heating process will persist about 10 minutes resulting in the MCT material going through a 10 minutes high temperature baking course. This baking process will strongly degenerate the characteristic of the MCT device. Under this circumstance this article gives a new heating technique for indium bump which is call induction heating melting technique. This method realizes the selective heating. While the indium bump is melted by the conduction heating the semiconductor material such as MCT can't be heated.

  20. Effects of a powered air-purifying respirator intervention on indium exposure reduction and indium related biomarkers among ITO sputter target manufacturing workers.

    PubMed

    Liu, Hung-Hsin; Chen, Chang-Yuh; Lan, Cheng-Hang; Chang, Cheng-Ping; Peng, Chiung-Yu

    2016-01-01

    This study aimed to evaluate the efficacy of powered air-purifying respirators (PAPRs) worn by the workers, and to investigate the effect of this application on exposure and preclinical effects in terms of workplace measuring and biomarker monitoring in ITO sputter target manufacturing plants and workers, respectively. Fifty-four workers were recruited and investigated from 2010-2012, during which PAPRs were provided to on-site workers in September 2011. Each worker completed questionnaires and provided blood and urine samples for analysis of biomarkers of indium exposure and preclinical effects. Area and personal indium air samples were randomly collected from selected worksites and from participants. The penetration percentage of the respirator (concentration inside respirator divided by concentration outside respirator) was 6.6%. Some biomarkers, such as S-In, SOD, GPx, GST, MDA, and TMOM, reflected the decrease in exposure and showed lower levels, after implementation of PAPRs. This study is the first to investigate the efficacy of PAPRs for reducing indium exposure. The measurement results clearly showed that the implementation of PAPRs reduces levels of indium-related biomarkers. These findings have practical applications for minimizing occupational exposure to indium and for managing the health of workers exposed to indium.

  1. Effects of a powered air-purifying respirator intervention on indium exposure reduction and indium related biomarkers among ITO sputter target manufacturing workers.

    PubMed

    Liu, Hung-Hsin; Chen, Chang-Yuh; Lan, Cheng-Hang; Chang, Cheng-Ping; Peng, Chiung-Yu

    2016-01-01

    This study aimed to evaluate the efficacy of powered air-purifying respirators (PAPRs) worn by the workers, and to investigate the effect of this application on exposure and preclinical effects in terms of workplace measuring and biomarker monitoring in ITO sputter target manufacturing plants and workers, respectively. Fifty-four workers were recruited and investigated from 2010-2012, during which PAPRs were provided to on-site workers in September 2011. Each worker completed questionnaires and provided blood and urine samples for analysis of biomarkers of indium exposure and preclinical effects. Area and personal indium air samples were randomly collected from selected worksites and from participants. The penetration percentage of the respirator (concentration inside respirator divided by concentration outside respirator) was 6.6%. Some biomarkers, such as S-In, SOD, GPx, GST, MDA, and TMOM, reflected the decrease in exposure and showed lower levels, after implementation of PAPRs. This study is the first to investigate the efficacy of PAPRs for reducing indium exposure. The measurement results clearly showed that the implementation of PAPRs reduces levels of indium-related biomarkers. These findings have practical applications for minimizing occupational exposure to indium and for managing the health of workers exposed to indium. PMID:26771526

  2. Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Cardelino, B. H.; Moore, C. E.; Cardelino, C. A.; Frazier, D. O.; Backmann, K. J.

    2000-01-01

    The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

  3. Synthesis of Ultrathin Copper Nanowires Using Tris(trimethylsilyl)silane for High-Performance and Low-Haze Transparent Conductors.

    PubMed

    Cui, Fan; Yu, Yi; Dou, Letian; Sun, Jianwei; Yang, Qin; Schildknecht, Christian; Schierle-Arndt, Kerstin; Yang, Peidong

    2015-11-11

    Colloidal metal nanowire based transparent conductors are excellent candidates to replace indium-tin-oxide (ITO) owing to their outstanding balance between transparency and conductivity, flexibility, and solution-processability. Copper stands out as a promising material candidate due to its high intrinsic conductivity and earth abundance. Here, we report a new synthetic approach, using tris(trimethylsilyl)silane as a mild reducing reagent, for synthesizing high-quality, ultrathin, and monodispersed copper nanowires, with an average diameter of 17.5 nm and a mean length of 17 μm. A study of the growth mechanism using high-resolution transmission electron microscopy reveals that the copper nanowires adopt a five-fold twinned structure and evolve from decahedral nanoseeds. Fabricated transparent conducting films exhibit excellent transparency and conductivity. An additional advantage of our nanowire transparent conductors is highlighted through reduced optical haze factors (forward light scattering) due to the small nanowire diameter.

  4. Field-effect transistors based on cubic indium nitride

    PubMed Central

    Oseki, Masaaki; Okubo, Kana; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2014-01-01

    Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics. PMID:24492240

  5. Field-effect transistors based on cubic indium nitride.

    PubMed

    Oseki, Masaaki; Okubo, Kana; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2014-02-04

    Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics.

  6. Absorption of ac fields in amorphous indium-oxide films

    SciTech Connect

    Ovadyahu, Z.

    2014-08-20

    Absorption data from applied ac fields in Anderson-localized amorphous indium-oxide (In{sub x}O) films are shown to be frequency and disorder dependent. The absorption shows a roll-off at a frequency which is much lower than the electron-electron scattering rate of the material when it is in the diffusive regime. This is interpreted as evidence for discreteness of the energy spectrum of the deeply localized regime. This is consistent with recent many-body localization scenarios. As the metal-insulator transition is approached, the absorption shifts to higher frequencies. Comparing with the previously obtained results on the crystalline version of indium-oxide (In{sub 2}O{sub 3−x}) implies a considerably higher inelastic electron-phonon scattering rate in the amorphous material. The range over which the absorption versus frequency decreases may indicate that a wide distribution of localization length is a common feature in these systems.

  7. Indium oxide: A transparent, conducting ferromagnetic semiconductor for spintronic applications

    NASA Astrophysics Data System (ADS)

    Babu, S. Harinath; Kaleemulla, S.; Rao, N. Madhusudhana; Krishnamoorthi, C.

    2016-10-01

    The optical and electrical properties are the two important dimensions of Indium oxide and its derivatives (indium tin oxide) and were well studied to understand the origin of wide electronic band gap and high electrical conductivity at room temperature. In2O3 and its derivatives find many applications in electronic and optoelectronic domains based on the above properties. The recent discovery of ferromagnetism in In2O3 at room temperature become a third dimension and lead to intensive research on enhancement of ferromagnetic strength by various means such as dopants and synthesis protocols and extrinsic parameters. The research lead to enormous experimental data and theoretical models proliferation over the past one decade with diverse insights into the origin of ferromagnetism in In2O3 based dilute magnetic semiconductors. The experimental data and theoretical models of ferromagnetism in In2O3 has been thoroughly surveyed in the literature and compiled all the data and presented for easy of understanding in this review. We have identified best chemical composition, geometry and synthesis protocols for strongest ferromagnetic strength and suitable theoretical model of magnetism has been presented in this review.

  8. Photoluminescence of monovalent indium centres in phosphate glass

    PubMed Central

    Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

    2015-01-01

    Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL and X-ray absorption fine structure (XAFS) analysis. Three absorption bands in the UV region are attributed to the In+ centre: two weak forbidden bands (1S0 → 3P1, 1S0 → 3P2) and a strong allowed band (1S0 → 1P1). The strongest PL excitation band cannot be attributed to the conventional allowed transition to the singlet excited state. Emission decay of the order of microseconds suggests that radiative relaxation occurs from the triplet excitation state. The XAFS analysis suggests that these In+ species have shorter In–O distances with lower coordination numbers than in In2O3. These results clearly demonstrate that In+ exists in a metastable amorphous network, which is the origin of the observed luminescent properties.

  9. Urinary copper excretion and hepatic copper concentrations in liver disease.

    PubMed

    Frommer, D J

    1981-01-01

    Urinary copper excretion was found to be increased in patients with cholestasis, hepatitis and cirrhosis, but the penicillamine-induced increment was normal. Wilson's disease patients had increased copper excretion before and after penicillamine, especially in untreated cases. Hepatic copper concentrations correlated with urinary copper excretion in cholestasis and treated Wilson's disease, but not in hepatitis or cirrhosis. In treated Wilson's disease, measurement of urinary copper excretion should be valuable in estimating the degree of removal of copper from the body during therapy. Urinary copper clearances were raised in various liver conditions, maximally in untreated Wilson's disease. It is suggested that only part of the serum non-caeruloplasmin copper is available for excretion into urine.

  10. Potentiometric detection and removal of copper using porphyrins

    PubMed Central

    2013-01-01

    Background Copper is an essential trace element with a great importance in industry, environment and biological systems. The great advantage of ion-selective sensors in comparison with other proposed techniques is that they are measuring the free metal ion activity which is responsible for their toxicity. Porphyrins are known to be among the best ionophores in formulation of ion-selective sensors. Results A symmetrically substituted meso-porphyrin, namely: 5,10,15,20-tetrakis(4-allyloxyphenyl)porphyrin (TAPP) was used in the construction of a new copper selective-sensor and was also tested for the removal of copper from waste waters. The potentiometric response characteristics (slope and selectivity) of copper-selective electrodes based on TAPP in o-nitrophenyloctylether (o-NPOE), dioctyl phtalate (DOP) and dioctyl sebacate (DOS) plasticized with poly(vinyl chloride) membranes are compared. Conclusions The best results were obtained for the membrane plasticized with DOP. The sensor has linear response in the range 1x10-7 – 1x10-1 M with 28.4 ± 0.4 mV/decade near-Nernstian slope towards copper ions and presents good selectivity. Due to its chelating nature, the same porphyrin was also tested for the retention of copper from synthetic copper samples, showing a maximum adsorption capacity of 280 mg/g. PMID:23829792

  11. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Ambade, Swapnil B.; Mane, R. S.; Kale, S. S.; Sonawane, S. H.; Shaikh, Arif V.; Han, Sung-Hwan

    2006-12-01

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu 2- xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm 2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  12. Mechanical durability of superhydrophobic and oleophobic copper meshes

    NASA Astrophysics Data System (ADS)

    Yin, Linting; Yang, Jin; Tang, Yongcai; Chen, Lin; Liu, Can; Tang, Hua; Li, Changsheng

    2014-10-01

    We developed a simple and inexpensive method to prepare the superhydrophobic and oleophobic copper meshes with rough structures fabrication and chemical modification. The achieved surfaces displayed liquid-repellent toward water and several organic liquids (such as hexadecane), which possessed much lower surface tension than that of water. Liquid repellency of the fabricated superhydrophobic copper mesh was demonstrated by visible experiment results and contact angle measurements. Even if the superhydrophobic copper mesh was rolled up, it still kept the superhydrophobicity. The mechanical durability was investigated by finger touch and mechanical abrasion tests. The results indicated that the copper mesh can maintain its superhydrophobicity against an abrasion length of 300 cm under a high pressure (77.2 kPa). The superhydrophobicity and oleophobicity, combined with mechanical durability, would promote the superhydrophobic surface to practical application in industry in the future.

  13. Gold, nickel and copper mining and processing.

    PubMed

    Lightfoot, Nancy E; Pacey, Michael A; Darling, Shelley

    2010-01-01

    Ore mining occurs in all Canadian provinces and territories except Prince Edward Island. Ores include bauxite, copper, gold, iron, lead and zinc. Workers in metal mining and processing are exposed, not only to the metal of interest, but also to various other substances prevalent in the industry, such as diesel emissions, oil mists, blasting agents, silica, radon, and arsenic. This chapter examines cancer risk related to the mining of gold, nickel and copper. The human carcinogenicity of nickel depends upon the species of nickel, its concentration and the route of exposure. Exposure to nickel or nickel compounds via routes other than inhalation has not been shown to increase cancer risk in humans. As such, cancer sites of concern include the lung, and the nasal sinus. Evidence comes from studies of nickel refinery and leaching, calcining, and sintering workers in the early half of the 20th century. There appears to be little or no detectable risk in most sectors of the nickel industry at current exposure levels. The general population risk from the extremely small concentrations detectable in ambient air are negligible. Nevertheless, animal carcinogenesis studies, studies of nickel carcinogenesis mechanisms, and epidemiological studies with quantitative exposure assessment of various nickel species would enhance our understanding of human health risks associated with nickel. Definitive conclusions linking cancer to exposures in gold and copper mining and processing are not possible at this time. The available results appear to demand additional study of a variety of potential occupational and non-occupational risk factors. PMID:21199602

  14. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-08-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  15. Copper and copper-nickel alloys as zebra mussel antifoulants

    SciTech Connect

    Dormon, J.M.; Cottrell, C.M.; Allen, D.G.; Ackerman, J.D.; Spelt, J.K.

    1996-04-01

    Copper has been used in the marine environment for decades as cladding on ships and pipes to prevent biofouling by marine mussels (Mytilus edulis L.). This motivated the present investigation into the possibility of using copper to prevent biofouling in freshwater by both zebra mussels and quagga mussels (Dreissena polymorpha and D. bugensis collectively referred to as zebra mussels). Copper and copper alloy sheet proved to be highly effective in preventing biofouling by zebra mussels over a three-year period. Further studies were conducted with copper and copper-nickel mesh (lattice of expanded metal) and screen (woven wire with a smaller hole size), which reduced the amount of copper used. Copper screen was also found to be strongly biofouling-resistant with respect to zebra mussels, while copper mesh reduced zebra mussel biofouling in comparison to controls, but did not prevent it entirely. Preliminary investigations into the mechanism of copper antifouling, using galvanic couples, indicated that the release of copper ions from the surface of the exposed metal into the surrounding water is directly or indirectly responsible for the biofouling resistance of copper.

  16. Preparation of high purity copper fluoride by fluorinating copper hydroxyfluoride

    NASA Technical Reports Server (NTRS)

    King, R. B.; Lundquist, J. R.

    1969-01-01

    Copper fluoride containing no more than 50 ppm of any contaminating element was prepared by the fluorination of copper hydroxyfluoride. The impurity content was obtained by spark source mass spectrometry. High purity copper fluoride is needed as a cathode material for high energy density batteries.

  17. Coping with copper: legacy effect of copper on potential activity of soil bacteria following a century of exposure.

    PubMed

    Nunes, Inês; Jacquiod, Samuel; Brejnrod, Asker; Holm, Peter E; Johansen, Anders; Brandt, Kristian K; Priemé, Anders; Sørensen, Søren J

    2016-11-01

    Copper has been intensively used in industry and agriculture since mid-18(th) century and is currently accumulating in soils. We investigated the diversity of potential active bacteria by 16S rRNA gene transcript amplicon sequencing in a temperate grassland soil subjected to century-long exposure to normal (∼15 mg kg(-1)), high (∼450 mg kg(-1)) or extremely high (∼4500 mg kg(-1)) copper levels. Results showed that bioavailable copper had pronounced impacts on the structure of the transcriptionally active bacterial community, overruling other environmental factors (e.g. season and pH). As copper concentration increased, bacterial richness and evenness were negatively impacted, while distinct communities with an enhanced relative abundance of Nitrospira and Acidobacteria members and a lower representation of Verrucomicrobia, Proteobacteria and Actinobacteria were selected. Our analysis showed the presence of six functional response groups (FRGs), each consisting of bacterial taxa with similar tolerance response to copper. Furthermore, the use of FRGs revealed that specific taxa like the genus Nitrospira and several Acidobacteria groups could accurately predict the copper legacy burden in our system, suggesting a potential promising role as bioindicators of copper contamination in soils. PMID:27543319

  18. Synthesis of Indium-Containing Nanoparticles in Aqueous Suspension Using Plasmas in Water for Evaluating Their Kinetics in Living Body.

    PubMed

    Amano, Takaaki; Sarinont, Thapanut; Koga, Kazunori; Hirata, Miyuki; Tanaka, Akiyo; Shiratani, Masaharu

    2015-11-01

    Nanoparticles have great potential for medical applications such as cancer therapy, whereas their toxic effects on human body are pointed out. To study kinetics and toxicity of nanoparticles in living body, we synthesized indium-containing nanoparticles in aqueous suspension using pulsed electrical discharge plasmas in water, because no indium compounds exist in the living body in the normal situation and hence indium-containing nanoparticles are useful tracer materials for analyzing kinetics of nanoparticles in living body. The mean size of synthesized primary nanoparticles is 7 nm, whereas the mean size of secondary nanoparticles is 315 nm. EDX and XRD analysis reveal that nanoparticles are indium crystalline and indium hydroxide crystalline with the mass ratio of 8:2. Preliminary subcutaneous administration of nanoparticles to mice shows that indium is transported from subcutaneous to blood. These results show that synthesized indium-containing nanoparticles are useful for analyzing kinetics of nanoparticles in living body. PMID:26726686

  19. Synthesis of Indium-Containing Nanoparticles in Aqueous Suspension Using Plasmas in Water for Evaluating Their Kinetics in Living Body.

    PubMed

    Amano, Takaaki; Sarinont, Thapanut; Koga, Kazunori; Hirata, Miyuki; Tanaka, Akiyo; Shiratani, Masaharu

    2015-11-01

    Nanoparticles have great potential for medical applications such as cancer therapy, whereas their toxic effects on human body are pointed out. To study kinetics and toxicity of nanoparticles in living body, we synthesized indium-containing nanoparticles in aqueous suspension using pulsed electrical discharge plasmas in water, because no indium compounds exist in the living body in the normal situation and hence indium-containing nanoparticles are useful tracer materials for analyzing kinetics of nanoparticles in living body. The mean size of synthesized primary nanoparticles is 7 nm, whereas the mean size of secondary nanoparticles is 315 nm. EDX and XRD analysis reveal that nanoparticles are indium crystalline and indium hydroxide crystalline with the mass ratio of 8:2. Preliminary subcutaneous administration of nanoparticles to mice shows that indium is transported from subcutaneous to blood. These results show that synthesized indium-containing nanoparticles are useful for analyzing kinetics of nanoparticles in living body.

  20. Dissolution Behavior of Indium in CaO-SiO2-Al2O3 Slag

    NASA Astrophysics Data System (ADS)

    Ko, Kyu Yeol; Park, Joo Hyun

    2011-12-01

    The solubility of indium in a molten CaO-SiO2-Al2O3 system was measured at 1773 K (1500 °C) to establish the dissolution mechanism of indium under a highly reducing atmosphere. The solubility of indium increases with increasing oxygen potential, whereas it decreases with increased activity of basic oxide. Therefore, a dissolution mechanism of indium can be constructed according to the following equation: {{In}}({{s}}) + 1/4{{O}}2 ({{g}}) = ({{In}}^{ + } ) + 1/2({{O}}^{2 - } ) The relationship between indium capacity and sulfide capacity shows a good correlation that is consistent with theoretical expectations. The enthalpy change of the indium dissolution reaction is negative, which indicates that the dissolution is an exothermic reaction. The heat of dissolution into high-silica melts is greater than that into low-silica melts. The solubility of indium is strongly dependent on the silica content. The activity coefficient, and thus the excess free energy of In2O, decreases linearly with increasing silica content, indicating that the In2O is believed to behave as a weak basic oxide in the current CaO-SiO2-Al2O3 ternary system under reducing conditions.

  1. Amorphous Indium Selenide Thin Films Prepared by RF Sputtering: Thickness-Induced Characteristics.

    PubMed

    Han, Myoung Yoo; Park, Yong Seob; Kim, Nam-Hoon

    2016-05-01

    The influence of indium composition, controlled by changing the film thickness, on the optical and electrical properties of amorphous indium selenide thin films was studied for the application of these materials as Cd-free buffer layers in CI(G)S solar cells. Indium selenide thin films were prepared using RF magnetron sputtering method. The indium composition of the amorphous indium selenide thin films was varied from 94.56 to 49.72 at% by increasing the film thickness from 30 to 70 nm. With a decrease in film thickness, the optical transmittance increased from 87.63% to 96.03% and Eg decreased from 3.048 to 2.875 eV. Carrier concentration and resistivity showed excellent values of ≥1015 cm(-3) and ≤ 10(4) Ω x cm, respectively. The conductivity type of the amorphous indium selenide thin films could be controlled by changing the film-thickness-induced amount of In. These results indicate the possibility of tuning the properties of amorphous indium selenide thin films by changing their composition for use as an alternate buffer layer material in CI(G)S solar cells.

  2. Amorphous Indium Selenide Thin Films Prepared by RF Sputtering: Thickness-Induced Characteristics.

    PubMed

    Han, Myoung Yoo; Park, Yong Seob; Kim, Nam-Hoon

    2016-05-01

    The influence of indium composition, controlled by changing the film thickness, on the optical and electrical properties of amorphous indium selenide thin films was studied for the application of these materials as Cd-free buffer layers in CI(G)S solar cells. Indium selenide thin films were prepared using RF magnetron sputtering method. The indium composition of the amorphous indium selenide thin films was varied from 94.56 to 49.72 at% by increasing the film thickness from 30 to 70 nm. With a decrease in film thickness, the optical transmittance increased from 87.63% to 96.03% and Eg decreased from 3.048 to 2.875 eV. Carrier concentration and resistivity showed excellent values of ≥1015 cm(-3) and ≤ 10(4) Ω x cm, respectively. The conductivity type of the amorphous indium selenide thin films could be controlled by changing the film-thickness-induced amount of In. These results indicate the possibility of tuning the properties of amorphous indium selenide thin films by changing their composition for use as an alternate buffer layer material in CI(G)S solar cells. PMID:27483886

  3. Optimizing galvanic pulse plating parameters to improve indium bump to bump bonding

    NASA Astrophysics Data System (ADS)

    Coleman, Jonathan J.; Rowen, Adam; Mani, Seethambal S.; Yelton, W. Graham; Arrington, Christian; Gillen, Rusty; Hollowell, Andrew E.; Okerlund, Daniel; Ionescu, Adrian

    2010-02-01

    The plating characteristics of a commercially available indium plating solution are examined and optimized to help meet the increasing performance demands of integrated circuits requiring substantial numbers of electrical interconnections over large areas. Current fabrication techniques rely on evaporation of soft metals, such as indium, into lift-off resist profiles. This becomes increasingly difficult to accomplish as pitches decrease and aspect ratios increase. To minimize pixel dimensions and maximize the number of pixels per unit area, lithography and electrochemical deposition (ECD) of indium has been investigated. Pulse ECD offers the capability of improving large area uniformity ideal for large area device hybridization. Electrochemical experimentation into lithographically patterned molds allow for large areas of bumps to be fabricated for low temperature indium to indium bonds. The galvanic pulse profile, in conjunction with the bath configuration, determines the uniformity of the plated array. This pulse is manipulated to produce optimal properties for hybridizing arrays of aligned and bonded indium bumps. The physical properties of the indium bump arrays are examined using a white light interferometer, a SEM and tensile pull testing. This paper provides details from the electroplating processes as well as conclusions leading to optimized plating conditions.

  4. Design rule of indium bump in infrared focal plane array for longer cycling life

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoling; Meng, Chao; Zhang, Wei; Lv, Yanqiu; Si, Junjie; Meng, Qingduan

    2016-05-01

    In light of the proposed equivalent method, a three-dimensional structural modeling of InSb infrared focal plane arrays (IRFPAs) is created, and the simulated strain distribution is identical to the deformation distribution on the top surface of InSb IRFPAs. After comparing the deformation features at different regions with the structural characteristics of IRFPAs, we infer that the flatness of InSb IRFPAs will be improved with a thinner indium bump array, and this inference is verified by subsequent simulation results. That is, when the diameter of indium bump is smaller than 20 μm, the simulated Z-components of strain on the whole top surface of InSb IRFPAs is uniform, and the deformation amplitude is small. When the diameter of indium bump is larger than 28 μm, the simulated Z-components of strain increases rapidly with the thicker indium bump, and the flatness of InSb IRFPAs is worsened rapidly. According to the changing trend of deformation amplitude with diameters of indium bump, and employing element pitches normalization method, a design rule of indium bump is proposed. That is, when the diameter of indium bump is shorter than 0.4 times the element pitch, the flatness of InSb IRFPAs is in an acceptable range. This design rule was supported by different IRFPAs with different formats delivered by several main research groups for achieving a longer cycling life.

  5. Indium 111-labeled white blood cell scans after vascular prosthetic reconstruction

    SciTech Connect

    Sedwitz, M.M.; Davies, R.J.; Pretorius, H.T.; Vasquez, T.E.

    1987-11-01

    The clinical value of indium 111-labeled white blood cell (WBC) scanning done after vascular graft procedures was investigated to differentiate noninfectious postoperative inflammation associated with graft incorporation from early prosthetic graft infection. Indium 111-labeled WBC scans were initially obtained in 30 patients before discharge from the hospital and during the subsequent follow-up period (334 days). Fourteen of 30 patients (47%) had normal predischarge scans that included all 10 patients who had grafts confined to the abdomen and 4 of 20 patients (20%) who had grafts arising or terminating at the femoral arteries (p less than 0.05). Sixteen of 30 patients (53%) discharged with abnormal initial indium 111 WBC scans underwent serial scanning until the scan normalized or a graft complication developed. All of the 16 patients had grafts involving the groin region. Abnormal indium 111 uptake in the femoral region continued for a mean 114 days without the development of prosthetic graft infections. The sensitivity of indium 111-labeled WBC scans for detecting wound complications was 100%, whereas the specificity was 50%. Thus, the accuracy of the test was only 53%. We conclude that (1) abnormal indium 111 WBC scans are common after graft operations involving the groin region but are unusual after vascular procedures confined to the abdomen, and (2) in the absence of clinical suspicion, the indium 111-labeled WBC scan does not reliably predict prosthetic graft infection because of the low specificity of the test in the early postoperative period.

  6. Ceruloplasmin, copper ions, and angiogenesis.

    PubMed

    Raju, K S; Alessandri, G; Ziche, M; Gullino, P M

    1982-11-01

    The ability to induce new formation of capillaries in the cornea was tested for ceruloplasmin, the copper carrier of serum, for fragments of the ceruloplasmin molecule with and without copper, for heparin, and for glycyl-L-histidyl-L-lysine, bound or not bound to copper ions. Male or female 2- to 3-kg New Zealand White rabbits were used. These experiments were prompted by the previous observation of copper accumulation in the cornea during angiogenesis and by the inability of copper-deficient rabbits to mount an angiogenic response. The results showed that the three different molecules were all able to induce angiogenesis provided that they were bound to copper. Fragments of the ceruloplasmin molecule also induced angiogenesis but only when copper was bound to the peptides. The data are interpreted to indicate that copper ions are involved in the sequence of events leading to angiogenesis and that the carrier molecules may be of quite a different nature. PMID:6182332

  7. Agricultural soils spiked with copper mine wastes and copper concentrate: implications for copper bioavailability and bioaccumulation.

    PubMed

    Ginocchio, Rosanna; Sánchez, Pablo; de la Fuente, Luz María; Camus, Isabel; Bustamante, Elena; Silva, Yasna; Urrestarazu, Paola; Torres, Juan C; Rodríguez, Patricio H

    2006-03-01

    A better understanding of exposure to and effects of copper-rich pollutants in soils is required for accurate environmental risk assessment of copper. A greenhouse experiment was conducted to study copper bioavailability and bioaccumulation in agricultural soils spiked with different types of copper-rich mine solid wastes (copper ore, tailing sand, smelter dust, and smelter slag) and copper concentrate. A copper salt (copper sulfate, CuSO4) that frequently is used to assess soil copper bioavailability and phytotoxicity also was included for comparison. Results showed that smelter dust, tailing sand, and CuSO4 are more likely to be bioavailable and, thus, toxic to plants compared with smelter slag, concentrate, and ore at equivalent total copper concentrations. Differences may be explained by intrinsic differences in copper solubilization from the source materials, but also by their capability to decrease soil pH (confounding effect). The copper toxicity and bioaccumulation in plants also varied according to soil physicochemical characteristics (e.g., pH and total organic carbon) and the available levels of plant nutrients, such as nitrogen, phosphorus, and potassium. Chemistry/mineralogy of mine materials, soil/pore-water chemistry, and plant physiological status thus should be integrated for building adequate models to predict phytotoxicity and environmental risk of copper. PMID:16566155

  8. Laser direct imaging of transparent indium tin oxide electrodes using high speed stitching techniques

    NASA Astrophysics Data System (ADS)

    Cheng, Pi-Ying; Hsiao, Wen-Tse; Chung, Chien-Kai; Tseng, Shih-Feng; Liao, Ien-Chang

    2014-09-01

    To accomplish an electrode patterning in large area, we present a high speed stitching technique used in an ultraviolet laser processing system and investigate the interaction between laser beams and indium tin oxide (ITO) thin films deposited on glass substrates. After optimizing the process parameters of the laser direct imaging (LDI) for the large-area electrode patterning, the ablated lines looked like regularly fish-scale marks of about a 40 μm diameter and a 120 nm depth around the processing path. The parameters includes the laser power of 1W, the scanning speed of galvanometers of 800 mm/s, and the laser pulse repetition frequency of 50 kHz. Moreover, the resistance value of the ablated ITO thin film is larger than 200MΩ that is electrically insulated from the other regions of electrode structure. LDI technology with UV laser beam has great potential applications in patterning on wafer or sapphire substrates and patterning a conductive layer deposited on the touch panels for semiconductor and optoelectric industries, respectively.

  9. Characterization and ultrafiltration of semiconductor indium phosphide (InP) wastewater for recycling.

    PubMed

    Wu, M; Sun, D D; Tay, J H

    2005-01-01

    This research work investigated the physical and chemical properties of a new type of wastewater produced from the semiconductor industry. The wastewater generated from indium phosphide (InP) wafer backgrinding and sawing processes was characterized in term of its particle size distribution (PSD), zeta potential, suspended and dissolved solids, total organic carbon, and turbidity. The wastewater contained high concentration of fine InP dusts with a size ranging from 0.07 - 1.44 mm. In spite of its high concentration of suspended solids resulting in high turbidity up to 371 NTU, the wastewater contained very low organic matters (TOC < 2.2 mg l(-1)) and other inorganic impurities (SO4(2-) < 0.21 mg l(-1) and Na+ < 0.16 mg l(-1)). Based on the experimental data collected, the treatment technologies using chemical precipitation and ultrafiltration were applied to the wastewater. Both processes could effectively remove InP particles from the wastewater, however the coagulants in chemical precipitation introduced other ionic contents into the process resulting in difficulties of water recycling in the later stage. In comparison, ultrafiltration was more promising for InP wastewater treatment and recycling. Based on the results of this study, a full-scale UF system was built in a local semiconductor plant and it has successfully reclaimed water from the InP wastes for the past six months without any quality issue being raised.

  10. Copper-phosphorus alloys offer advantages in brazing copper

    SciTech Connect

    Rupert, W.D.

    1996-05-01

    Copper-phosphorus brazing alloys are used extensively for joining copper, especially refrigeration and air-conditioning copper tubing and electrical conductors. What is the effect of phosphorus when alloyed with copper? The following are some of the major effects: (1) It lowers the melt temperature of copper (a temperature depressant). (2) It increases the fluidity of the copper when in the liquid state. (3) It acts as a deoxidant or a fluxing agent with copper. (4) It lowers the ductility of copper (embrittles). There is a misconception that silver improves the ductility of the copper-phosphorus alloys. In reality, silver added to copper acts in a similar manner as phosphorus. The addition of silver to copper lowers the melt temperature (temperature depressant) and decreases the ductility. Fortunately, the rate and amount at which silver lowers copper ductility is significantly less than that of phosphorus. Therefore, taking advantage of the temperature depressant property of silver, a Ag-Cu-P alloy can be selected at approximately the same melt temperature as a Cu-P alloy, but at a lower phosphorus content. The lowering of the phosphorus content actually makes the alloy more ductile, not the silver addition. A major advantage of the copper-phosphorus alloys is the self-fluxing characteristic when joining copper to copper. They may also be used with the addition of a paste flux on brass, bronze, and specialized applications on silver, tungsten and molybdenum. Whether it is selection of the proper BCuP alloy or troubleshooting an existing problem, the suggested approach is a review of the desired phosphorus content in the liquid metal and how it is being altered during application. In torch brazing, a slight change in the oxygen-fuel ratio can affect the joint quality or leak tightness.

  11. A view of aqueous electrochemical carbon dioxide reduction to formate at indium electrodes, and the reversible electrodeposition of silver in ionic liquids through the lens of fundamental surface science

    NASA Astrophysics Data System (ADS)

    Detweiler, Zachary M.

    Two systems were studied using in situ measurement techniques, demonstrating the importance of creative experimental design. The electroreduction of CO2 at heterogeneous indium electrodes in aqueous solution was analyzed by cyclic voltammetry. Bulk electrolyses showed that increased indium oxide presence prior to electrolysis improved the Faradaic efficiency of CO 2 reduction to formate in 0.5 M K2SO2 aqueous solutions at a pH of 4.4. In order to more accurately assign speciation at the electrode surface ex situ O2 and H2O dosing of metallic indium under UHV was studied with XPS, HREELS and TPD. Ambient pressure XPS showed that the ratio of oxide to hydroxide at the indium interface is strongly dependent on the partial pressure of water; decreasing as P(H2O) increases. Using this information, a qualitative picture of the indium interface could be generated. In situ ATR-FTIR with an indium thin film as the working electrode showed that bulk oxide quickly reduces with applied potential, but an interfacial oxide is still present at high reductive overpotential. Additionally, an adsorbed carbonate at the thin film interface was observed upon introducing CO 2 to the cell. The implication of a surface bound carbonate as the CO 2 reduction intermediate draws on a mechanism that has not previously been discussed in the electrochemical reduction of CO2. The previous study of this mechanism from Ficscher-Tropsch literature helps to predict the further reduced products found at more electropositive metals, such as copper or magnesium, the latter of which is described here. Additionaly described here is a series of ILs that were employed as electrolyte for reversible silver deposition. BMIM N(TfO)2 was found to be the most promising of those studied, intrinsically giving a more uniform deposit that was bright and reversible. Deposit formation was studied using SEM and EDX as a function of deposition potential and deposition time. In situ reflectometry was employed to get a

  12. High adherence copper plating process

    DOEpatents

    Nignardot, H.

    1993-09-21

    A process is described for applying copper to a substrate of aluminum or steel by electrodeposition and for preparing the surface of an aluminum or steel substrate for the electrodeposition of copper. Practice of the invention provides good adhesion of the copper layer to either substrate.

  13. Indium-111-labeled leukocyte localization in hematomas: a pitfall in abscess detection

    SciTech Connect

    Wing, V.W.; vanSonnenberg, E.; Kipper, S.; Bieberstein, M.P.

    1984-07-01

    Indium-111-labeled white-blood-cell scanning is a useful modality in abscess detection and has replaced gallium scanning in many institutions. Sensitivities of 72% to 90% and specificities of 90% to 100% have been reported. In searching for abscesses seven cases of indium-111-labeled leukocyte uptake were encountered in collections subsequently proved to be noninfected hematomas. Abundant red blood cells with few or no white blood cells, no bacteria, and a benign clinical course identified these noninfected hematomas. Five of the patients were being treated with hemodialysis and three were recent allograft recipients. The results indicate some limitation and nonspecificity in indium-111 scanning, despite its many benefits.

  14. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A.

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  15. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOEpatents

    Seager, Carleton H.; Evans, Jr., Joseph Tate

    1998-01-01

    A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

  16. Highly conductive indium nanowires deposited on silicon by dip-pen nanolithography

    SciTech Connect

    Kozhukhov, Anton; Volodin, Vladimir; Klimenko, Anatoliy; Shcheglov, Dmitriy; Karnaeva, Natalya; Latyshev, Alexander

    2015-04-14

    In this paper, we developed a new dip-pen nanolithography (DPN) method. Using this method, we fabricated conductive nanowires with diameters of 30–50 nm on silicon substrates. To accomplish this, indium was transferred from an atomic force microscopy tip to the surface by applying a potential difference between the tip and substrate. The fabricated indium nanowires were several micrometers in length. Unlike thermal DPN, our DPN method hardly oxidized the indium, producing nanowires with conductivities from 5.7 × 10{sup −3} to 4 × 10{sup −2} Ω cm.

  17. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOEpatents

    Seager, C.H.; Evans, J.T. Jr.

    1998-11-24

    A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

  18. Indium phosphide solar cells - Recent developments and estimated performance in space

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving; Brinker, David J.

    1990-01-01

    The current status of indium phosphide solar cell research is reviewed. In the NASA research program, efficiencies of 18.8 percent were achieved for standard n/p homojunction InP cells while 17 percent was achieved for ITO/InP cells processed by sputtering n-type indium tin oxide onto p-type indium phosphide. The latter represents a cheaper, simpler processing alternative. Computer modeling calculations indicate that efficiencies of over 21 percent are feasible. Relatively large area cells are produced in Japan with a maximum efficiency of 16.6 percent.

  19. Transport properties of superconducting high indium-doped SnTe single crystals

    NASA Astrophysics Data System (ADS)

    Zhang, Cheng; Zhong, Ruidan; Gu, Genda; Li, Qiang

    The discovery of topological crystalline insulator SnTe has ignited a search for the predicted topological superconductors. Recently, we performed the transport measurement on a series of indium-doped SnTe single crystals (Sn1-xInxTe). Hall measurement shows that carrier type changes when indium doping level is between x = 0.2 and 0.3. Weak anti-localization effect and Shubnikov-de Hass oscillations was found in x = 0.45 samples, which have the highest superconducting transition temperature at 4.5 K. Both superconducting and normal state properties of high indium-doped SnTe will be discussed.

  20. Acid copper sulfate plating bath: Control of chloride and copper

    SciTech Connect

    Borhani, K.J.

    1992-08-01

    Plated-through holes in high-reliability printed wiring boards require a ductile copper plate of uniform consistency. The level of control of the chemical constituents in the electroplating solutions dictates the physical properties of the copper plate. To improve the control of the chemical bath constituents, in-situ methods for electrochemically determining copper and chloride in acid copper sulfate baths were developed. A solid-state ion-selective electrode was used for the chloride ion and proved to be more reproducible than conventional silver chloride turbidimetric methods. The use of a copper solid-state ion-selective electrode in-situ was also successful in this application.

  1. Brazing copper to dispersion-strengthened copper

    SciTech Connect

    Ryding, D.G.; Allen, D.; Lee, R.

    1996-08-01

    The Advanced Photon Source (APS) is a state-of-the-art synchrotron light source that will produce intense x-ray beams, which will allow the study of smaller samples and faster reactions and processes at a greater level of detail that has been possible to date. The beam is produced by using third-generation insertion devices in a 7 GeV electron/positron storage ring that is 1100 meters in circumference. The heat load from these intense high power devices is very high and certain components must sustain total heat loads of 3 to 15 kW and heat fluxes of 30 W/mm{sup 2}. Because the beams will cycle on and off many times, thermal shock and fatigue will be a problem. High heat flux impinging on a small area causes a large thermal gradient that results in high stress. GlidCop{reg_sign}, a dispersion strengthened copper, is the desired material because of its high thermal conductivity and superior mechanical properties as compared to copper and its alloys. GlidCop is not amenable to joining by fusion welding, and brazing requires diligence because of high diffusivity. Brazing procedures were developed using optical and scanning electron microscopy.

  2. Rapid thermal annealing of indium phosphide compound semiconductors

    NASA Technical Reports Server (NTRS)

    Biedenbender, Michael D.; Kapoor, Vik J.; Williams, W. D.

    1987-01-01

    The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.

  3. Tunable morphologies of indium tin oxide nanostructures using nanocellulose templates

    DOE PAGESBeta

    Aytug, Tolga; Meyer, III, Harry M.; Ozcan, Soydan; Lu, Yuan; Poole, II, Joseph E.

    2015-01-01

    Metal oxide nanostructures have emerged as an important family of materials for various device applications. The performance is highly dependent on the morphology of the metal oxide nanostructures. Here we report a completely green approach to prepare indium tin oxide (ITO) nanoparticles using only water and cellulose nanofibril (CNF) in addition to the ITO precursor. Surface hydroxyl groups of the CNFs allow for efficient conjugation of ITO precursors (e.g., metal ions) in aqueous solution. The resulting CNF film allows for controllable spatial arrangement of metal oxide precursors, which results in tunable particle morphology (e.g., nanowires, nanospheres, and octahedral nanoparticles). Thesemore » ITO nanoparticles can also form conductive and transparent ITO films. This study opens a new perspective on developing metal oxide nanostructures.« less

  4. Infrared plasmonics with indium-tin-oxide nanorod arrays.

    PubMed

    Li, Shi Qiang; Guo, Peijun; Zhang, Lingxiao; Zhou, Wei; Odom, Teri W; Seideman, Tamar; Ketterson, John B; Chang, Robert P H

    2011-11-22

    This article reports the study of infrared plasmonics with both random and periodic arrays of indium-tin-oxide (ITO) nanorods (NR). A description is given on the synthesis, patterning, and characterization of physical properties of the ITO NR arrays. A classical scattering model, along with a 3-D finite-element-method and a 3-D finite-difference-time-domain numerical simulation method has been used to interpret the unique light scattering phenomena. It is also shown that the intrinsic plasma frequency can be varied through careful postsynthesis processing of the ITO NRs. Examples are given on how coupled plasmon resonances can be tuned through patterning of the ITO NR arrays. In addition, environment dielectric sensing has been demonstrated through the shift of the resonances as a result of index change surrounding the NRs. These initial results suggest potential for further improvement and opportunities to develop a good understanding of infrared plasmonics using ITO and other transparent conducting oxide semiconducting materials.

  5. Tunable morphologies of indium tin oxide nanostructures using nanocellulose templates

    SciTech Connect

    Aytug, Tolga; Meyer, III, Harry M.; Ozcan, Soydan; Lu, Yuan; Poole, II, Joseph E.

    2015-01-01

    Metal oxide nanostructures have emerged as an important family of materials for various device applications. The performance is highly dependent on the morphology of the metal oxide nanostructures. Here we report a completely green approach to prepare indium tin oxide (ITO) nanoparticles using only water and cellulose nanofibril (CNF) in addition to the ITO precursor. Surface hydroxyl groups of the CNFs allow for efficient conjugation of ITO precursors (e.g., metal ions) in aqueous solution. The resulting CNF film allows for controllable spatial arrangement of metal oxide precursors, which results in tunable particle morphology (e.g., nanowires, nanospheres, and octahedral nanoparticles). These ITO nanoparticles can also form conductive and transparent ITO films. This study opens a new perspective on developing metal oxide nanostructures.

  6. Synthesis of indium sulphide quantum dots in perfluoronated ionomer membrane

    SciTech Connect

    Sumi, R.; Warrier, Anita R.; Vijayan, C.

    2014-01-28

    In this paper, we demonstrate a simple and efficient method for synthesis of β-indium sulphide (In{sub 2}S{sub 3}) nanoparticles embedded in an ionomer matrix (nafion membrane). The influence of reaction temperature on structural, compositional and optical properties of these films were analysed using X-Ray Diffraction, EDAX, UV-Vis absorption spectroscopy and photoluminescence studies. Average particle diameter was estimated using modified effective mass approximation method. Absorption spectra of In{sub 2}S{sub 3} nanoparticles show blue shift compared to bulk In{sub 2}S{sub 3}, indicating strong quantum size confinement effects. PL emission in the wavelength range 530–600 nm was recorded using a 488 nm line from an Ar{sup +} laser as the excitation source.

  7. Electronic structure of MoO3 insertion layer at the interface between organic semiconductor and indium tin oxide (ITO).

    NASA Astrophysics Data System (ADS)

    Ding, Huanjun; Irfan, Irfan; Gao, Yongli; So, Frank

    2009-03-01

    We have investigated the electronic structure of the interfaces formed by inserting thin layer of MoO3 in between indium tin oxide (ITO) and different organic semiconductors, such as aluminium phthalocyanine chloride (AlPcCl) and copper phthalocyanine (CuPc), with photoemission and inverse photoemission spectroscopy (PES and IPES). The presents of MoO3 layer at the interface increases the workfunction dramatically. As a result, the organic HOMO is almost aligned with the Fermi level (Ef) at the AlPc-Cl/MoO3 interface. For thicker AlPc-Cl layers, gradual band bending is observed. However, the recovery of the HOMO is incomplete for AlPc-Cl thickness of 200 å, leading to a great reduction of the hole injection barrier compare to the case without MoO3. Similar situation is found in case of CuPc/MoO3, although the energy levels are almost fully recovered for CuPc film thicker than 200 å. The energy level alignment of these interfaces will be discussed to explain the improvement induced by MoO3 layer in device performance.

  8. Macro- and microscopic properties of strontium doped indium oxide

    SciTech Connect

    Nikolaenko, Y. M.; Kuzovlev, Y. E.; Medvedev, Y. V.; Mezin, N. I.; Fasel, C.; Gurlo, A.; Schlicker, L.; Bayer, T. J. M.; Genenko, Y. A.

    2014-07-28

    Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In{sub 2}O{sub 3}:(SrO){sub x} were investigated for materials with different doping levels at different temperatures (T = 20–300 °C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x = 10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn{sub 2}O{sub 4}. An unusual property of high level (x = 10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100–200 °C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3 × 10{sup −13} cm{sup 2}/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

  9. Characterization of reliability of printed indium tin oxide thin films.

    PubMed

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments. PMID:24245331

  10. Creative Copper Crests

    ERIC Educational Resources Information Center

    Knab, Thomas

    2011-01-01

    In this article, the author discusses how to create an art activity that would link the computer-created business cards of fourth-grade students with an upcoming school-wide medieval event. Creating family crests from copper foil would be a great connection, since they, like business cards, are an individual's way to identify themselves to others.…

  11. Copper leaching from chalcopyrite concentrates

    NASA Astrophysics Data System (ADS)

    Wang, Shijie

    2005-07-01

    Chalcopyrite (CuFeS2) is one of the most abundant copper-bearing minerals, which accounts for approximately 70 percent of the world’s known copper reserves. For more than 30 years, a significant number of processes have been developed to leach copper from chalcopyrite concentrates. These processes recover copper via hydrometallurgical leaching of the copper component of chalcopyrite concentrates, followed by solvent extraction and electrowinning. A number of demonstration plant operations have been conducted, but as of this writing none of the processes have become completely commercially operational.

  12. Characterization and quantification of unintentional POP emissions from primary and secondary copper metallurgical processes in China

    NASA Astrophysics Data System (ADS)

    Nie, Zhiqiang; Liu, Guorui; Liu, Wenbin; Zhang, Bing; Zheng, Minghui

    2012-09-01

    Field monitoring was conducted to update and develop unintentional persistent organic pollutant (unintentional POP) emission inventories for the copper metallurgy industry in China. In this study, emissions of six unintentional POPs comprised of polychlorinated dibenzo-p-dioxin and dibenzofuran (PCDD/PCDF), polychlorinated biphenyls (PCBs), polychlorinated naphthalenes (PCNs), hexachlorobenzene (HxCBz) and pentachlorobenzene (PeCBz) in stack gas and fly ash samples from primary and secondary copper smelters using different raw materials and technologies were measured and compared. Different concentrations, congener patterns and emission factors of unintentional POPs among four copper smelters were observed. Variations in unintentional POP emissions from several areas of a primary copper smelter were also investigated. The total emissions of unintentional POPs from primary and secondary copper production in 2010 in China were estimated respectively. These results provide a useful reference for the establishment of unintentional POP emission inventories and for policymakers to formulate control strategies to reduce unintentional POPs resulting from copper metallurgy.

  13. Presenilin Promotes Dietary Copper Uptake

    PubMed Central

    Southon, Adam; Greenough, Mark A.; Ganio, George; Bush, Ashley I.; Burke, Richard; Camakaris, James

    2013-01-01

    Dietary copper is essential for multicellular organisms. Copper is redox active and required as a cofactor for enzymes such as the antioxidant Superoxide Dismutase 1 (SOD1). Copper dyshomeostasis has been implicated in Alzheimer’s disease. Mutations in the presenilin genes encoding PS1 and PS2 are major causes of early-onset familial Alzheimer’s disease. PS1 and PS2 are required for efficient copper uptake in mammalian systems. Here we demonstrate a conserved role for presenilin in dietary copper uptake in the fly Drosophila melanogaster. Ubiquitous RNA interference-mediated knockdown of the single Drosophila presenilin (PSN) gene is lethal. However, PSN knockdown in the midgut produces viable flies. These flies have reduced copper levels and are more tolerant to excess dietary copper. Expression of a copper-responsive EYFP construct was also lower in the midgut of these larvae, indicative of reduced dietary copper uptake. SOD activity was reduced by midgut PSN knockdown, and these flies were sensitive to the superoxide-inducing chemical paraquat. These data support presenilin being needed for dietary copper uptake in the gut and so impacting on SOD activity and tolerance to oxidative stress. These results are consistent with previous studies of mammalian presenilins, supporting a conserved role for these proteins in mediating copper uptake. PMID:23667524

  14. An evaluation of the potential yield of indium recycled from end-of-life LCDs: A case study in China.

    PubMed

    Wang, Hengguang; Gu, Yifan; Wu, Yufeng; Zhang, Yi-Nan; Wang, Wei

    2015-12-01

    With the advances in electronics and information technology, China has gradually become the largest consumer of household appliances (HAs). Increasingly, end-of-life (EOL) HAs are generated in China. EOL recycling is a promising strategy to reduce dependence on virgin production, and indium is one of the recycled substances. The potential yield of indium recycling has not been systematically evaluated in China thus far. This paper estimates the potential yield of recycled indium from waste liquid crystal displays (LCDs) in China during the period from 2015 to 2030. The quantities of indium that will be used to produce LCDs are also predicted. The estimates focus on the following three key LCD waste sources: LCD TVs, desktop computers and portable computers. The results show that the demand for indium will be increasing in the near future. It is expected that 350 tonnes of indium will be needed to produce LCDs in China in 2035. The indium recycled from EOL LCDs, however, is much less than the demand and only accounts for approximately 48% of the indium demand. The sustainable index of indium is always less than 0.5. Therefore, future indium recycling efforts should focus on the development of recycling technology and the improvement of the relevant policy.

  15. An evaluation of the potential yield of indium recycled from end-of-life LCDs: A case study in China.

    PubMed

    Wang, Hengguang; Gu, Yifan; Wu, Yufeng; Zhang, Yi-Nan; Wang, Wei

    2015-12-01

    With the advances in electronics and information technology, China has gradually become the largest consumer of household appliances (HAs). Increasingly, end-of-life (EOL) HAs are generated in China. EOL recycling is a promising strategy to reduce dependence on virgin production, and indium is one of the recycled substances. The potential yield of indium recycling has not been systematically evaluated in China thus far. This paper estimates the potential yield of recycled indium from waste liquid crystal displays (LCDs) in China during the period from 2015 to 2030. The quantities of indium that will be used to produce LCDs are also predicted. The estimates focus on the following three key LCD waste sources: LCD TVs, desktop computers and portable computers. The results show that the demand for indium will be increasing in the near future. It is expected that 350 tonnes of indium will be needed to produce LCDs in China in 2035. The indium recycled from EOL LCDs, however, is much less than the demand and only accounts for approximately 48% of the indium demand. The sustainable index of indium is always less than 0.5. Therefore, future indium recycling efforts should focus on the development of recycling technology and the improvement of the relevant policy. PMID:26277718

  16. Structural and electrical properties of sol-gel spin coated indium doped cadmium oxide thin films

    SciTech Connect

    Rajammal, R.; Savarimuthu, E. Arumugam, S.

    2014-04-24

    The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10{sup −4}Ω cm and a maximum carrier concentration of 1.20×10{sup 20}cm{sup −3} have been realized.

  17. Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

    NASA Astrophysics Data System (ADS)

    Jia, Ye; Wallace, Joshua S.; Qin, Yueling; Gardella, Joseph A.; Dabiran, Amir M.; Singisetti, Uttam

    2016-04-01

    In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.

  18. Optimal design study of high efficiency indium phosphide space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1990-01-01

    Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements. To achieve cost effectiveness, practical cell efficiencies have to be raised to near theoretical limits and thin film indium phosphide cells need to be developed. The optimal design study is described of high efficiency indium phosphide solar cells for space power applications using the PC-1D computer program. It is shown that cells with efficiencies over 22 pct. AMO at 25 C could be fabricated by achieving proper material and process parameters. It is observed that further improvements in cell material and process parameters could lead to experimental cell efficiencies near theoretical limits. The effect of various emitter and base parameters on cell performance was studied.

  19. Dinucleating Ligand Platforms Supporting Indium and Zinc Catalysts for Cyclic Ester Polymerization.

    PubMed

    Kremer, Alexandre B; Osten, Kimberly M; Yu, Insun; Ebrahimi, Tannaz; Aluthge, Dinesh C; Mehrkhodavandi, Parisa

    2016-06-01

    The synthesis of the first alkoxide-bridged indium complex supported by a chiral dinucleating ligand platform (1), along with its zinc analogue (2), is reported. Both complexes are synthesized in a one-pot reaction starting from a chiral dinucleating bis(diamino)phenolate ligand platform, sodium ethoxide, and respective metal salts. The dinucleating indium analogue (7) based on an achiral ligand backbone is also reported. Indium complexes bearing either the chiral or achiral ligand catalyze the ring-opening polymerization of racemic lactide (rac-LA) to afford highly heterotactic poly(lactic acid) (PLA; Pr > 0.85). The indium complex bearing an achiral ligand affords essentially atactic PLA from meso-LA. The role of the dinucleating ligand structure in catalyst synthesis and polymerization activity is discussed. PMID:27187767

  20. Hydrometallurgical Recovery of Indium from Flat-Panel Displays of Spent Liquid Crystal Televisions

    NASA Astrophysics Data System (ADS)

    Inoue, Katsutoshi; Alam, Shafiq

    2015-02-01

    A recovery process for indium from waste liquid crystal display panels was developed on the basis of hydrometallurgical technology. The powdered sample was leached with 3 M HCl to extract its various metal constituents (indium, aluminum, tin, etc.). The mutual separation and subsequent recovery of the dissolved metals was achieved using two column adsorption tests: The first column was packed with a porous resin impregnated with Aliquat 336, a commercially available solvent extraction reagent based on a quaternary ammonium compound, and the resin contained in the second column was impregnated with Cyanex 923, also a commercially available solvent extraction reagent based on trialkylphosphine oxide. In the first column, tin, iron, and zinc were removed from the leach liquor. In the second column, only indium was selectively recovered. The metal ions trapped in these columns were eluted with 0.1 M H2SO4, yielding a solution purified indium solution with a concentration 10 times that of the feed solution.

  1. Optically- and Electrically-Stimulated Terahertz Radiation Emission from Indium Nitride

    NASA Astrophysics Data System (ADS)

    Wilke, Ingrid; Ding, Yujie J.; Shubina, Tatiana V.

    2012-06-01

    Indium nitride is a novel narrow band gap semiconductor. The material is a potential strong source of terahertz frequency electromagnetic radiation with applications in time-domain terahertz spectroscopy and imaging systems. This article reviews recent experimental research on terahertz emission from the binary compound semiconductor indium nitride excited by near-infrared laser beams or microseconds electrical pulses. Advantages of indium nitride as terahertz radiation source material are discussed. It is demonstrated that different mechanisms contribute to the emission of terahertz radiation from indium nitride. The emission of up to 2.4 μW of THz radiation power is observed when InN is excited with near-infrared femtosecond laser pulses at an average power of 1 W.

  2. Indium bump array fabrication on small CMOS circuit for flip-chip bonding

    NASA Astrophysics Data System (ADS)

    Yuyang, Huang; Yuxiang, Zhang; Zhizhen, Yin; Guoxin, Cui; C, Liu H.; Lifeng, Bian; Hui, Yang; Yaohui, Zhang

    2011-11-01

    We demonstrate a novel method for indium bump fabrication on a small CMOS circuit chip that is to be flip-chip bonded with a GaAs/AlGaAs multiple quantum well spatial light modulator. A chip holder with a via hole is used to coat the photoresist for indium bump lift-off. The 1000 μm-wide photoresist edge bead around the circuit chip can be reduced to less than 500 μm, which ensures the integrity of the indium bump array. 64 × 64 indium arrays with 20 μm-high, 30 μm-diameter bumps are successfully formed on a 5 × 6.5 mm2 CMOS chip.

  3. Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide

    NASA Technical Reports Server (NTRS)

    Gessert, T. A.; Li, X.; Wanlass, M. W.; Nelson, A. J.; Coutts, T. J.

    1990-01-01

    While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.

  4. Ultraflexible polymer solar cells using amorphous zinc-indium-tin oxide transparent electrodes.

    PubMed

    Zhou, Nanjia; Buchholz, Donald B; Zhu, Guang; Yu, Xinge; Lin, Hui; Facchetti, Antonio; Marks, Tobin J; Chang, Robert P H

    2014-02-01

    Polymer solar cells are fabricated on highly conductive, transparent amorphous zinc indium tin oxide (a-ZITO) electrodes. For two representative active layer donor polymers, P3HT and PTB7, the power conversion efficiencies (PCEs) are comparable to reference devices using polycrystalline indium tin oxide (ITO) electrodes. Benefitting from the amorphous character of a-ZITO, the new devices are highly flexible and can be repeatedly bent to a radius of 5 mm without significant PCE reduction. PMID:24123578

  5. Role of TBATB in nano indium oxide catalyzed C-S bond formation

    PubMed Central

    Gogoi, Prasanta; Hazarika, Sukanya; Barman, Pranjit

    2015-01-01

    Nano sized indium oxide is found to be an efficient catalyst for the conversion of thiols to sulfides using Na2CO3 as base and TBATB as reagent in DMSO at 110 °C. Here in situ generation of bromo intermediate by TBATB takes place through indium surface. A variety of aryl sulfides can be synthesized in excellent yields from less reactive chlorides, boronic acids and thiols. PMID:26415729

  6. Indium-doped GaAs: A very dilute alloy system

    NASA Astrophysics Data System (ADS)

    Laurenti, J. P.; Roentgen, P.; Wolter, K.; Seibert, K.; Kurz, H.; Camassel, J.

    1988-03-01

    The influence of indium incorporation in GaAs organometallic-vapor-phase-epitaxy (OMVPE) layers has been investigated in great detail. The results obtained concern the change in band-gap energy, the concentration of residual impurities, and the low-temperature (2-K) photoluminescence (PL) efficiency. For In concentrations ranging between 0 and 6.5×1019 cm-3, both A0X and D0X bound-exciton lines could be resolved. Together with the near-band-gap transitions involving shallow impurities (DA- and eA-related recombination lines), they shift toward lower energies versus indium content. This indicates the formation of a ternary compound Ga1-xInxAs, even at these extremely dilute indium concentrations. After a quantitative calibration of the indium content, linear relations have been found which connect the PL emission line energies and the indium concentration. They make low-temperature PL measurements the most quantitative, and nondestructive, tool for precise composition studies. In this case, care should be taken that the slope parameters are line dependent. For instance, we find a slight, but finite, discrepancy between the slope parameters corresponding to substitutional acceptors on Ga and As sites, respectively. This is discussed in terms of the two different sublattices by using a simple cluster model of 17 atoms. Lastly, we find the absolute PL intensities to increase versus indium concentration: This indicates an improvement in the optical quality of our samples. Since, on a relative scale, the PL signals involving ZnGa and/or MgGa residual acceptors are not significantly affected by the amount of indium incorporated, but depend mainly on the growth sequence, we feel that indium in GaAs acts primarily by closing nonradiative-recombination paths which are not necessarily associated with gallium vacancies.

  7. Dual-energy subtraction imaging utilizing indium as a contrast agent

    SciTech Connect

    Le Duc, G.; Zhong, Z.; Warkentien, L.; Laster, B.; Thomlinson, W.

    1997-10-01

    The purpose of our current work is to establish the minimum detection, of indium contrast agent using dual-energy subtraction imaging above and below indium K-edge. Experiments were performed on the X12 and X17B2 beamlines at the National Synchrotron Light Source using the same method but with two different set-ups. Experiments were first carried out on InCl{sub 3} solutions, then on V79 Chinese hamster cells and on BALB/c mice excised tumors, labeled with indium. For each experiment, several layers of Lucite were placed in front of the phantom to ensure a 43 mm thickness, dose to that of a mammography examination. Results were the same on X12 and X17B2. As expected, indium-free materials disappeared on subtracted images (water, steel reference and screw). Indium samples were easily distinguishable for the following concentrations: 10-5-2-1 mg/cm{sup 2}. Smaller concentrations were not clearly distinguishable and we were unable to see cell samples and tumors. To conclude, the lowest concentration we can image is around 1 mg/cm{sup 2}. These results agree with theoretical results. Such results also suggest that indium concentration in both cells and tumors is lower than 0.5 mg/cm{sup 2}. Since the current detection is dose to optimum, we conclude that dual energy subtraction imaging using indium to label tumors cells and tumors is not possible unless the indium uptake is increased by more than an order of magnitude.

  8. Development of Indium bump bonding for the ATLAS Insertable B-Layer (IBL)

    NASA Astrophysics Data System (ADS)

    Alimonti, G.; Andreazza, A.; Corda, G.; Darbo, G.; Di Gioia, S.; Fiorello, A.; Gariano, G.; Gemme, C.; Meroni, C.; Rovani, A.; Ruscino, E.

    2013-01-01

    About half of the ATLAS pixel modules have been assembled with the Selex indium bump bonding process. The requirements of the ATLAS Insertable B-Layer (IBL) detector ask for larger and thinner chips, two critical parameters for bonding processes. We report on the research and development carried on with Selex to produce modules with 100 μm thick and 18.8 × 20.2 mm2 area read out chips bonded with indium bumps.

  9. Enhanced optical properties due to indium incorporation in zinc oxide nanowires

    NASA Astrophysics Data System (ADS)

    Farid, S.; Mukherjee, S.; Sarkar, K.; Mazouchi, M.; Stroscio, M. A.; Dutta, M.

    2016-01-01

    Indium-doped zinc oxide nanowires grown by vapor-liquid-solid technique with 1.6 at. % indium content show intense room temperature photoluminescence (PL) that is red shifted to 20 meV from band edge. We report on a combination of nanowires and nanobelts-like structures with enhanced optical properties after indium doping. The near band edge emission shift gives an estimate for the carrier density as high as 5.5 × 1019 cm-3 for doped nanowires according to Mott's critical density theory. Quenching of the visible green peak is seen for doped nanostructures indicating lesser oxygen vacancies and improved quality. PL and transmission electron microscopy measurements confirm indium doping into the ZnO lattice, whereas temperature dependent PL data give an estimation of the donor and acceptor binding energies that agrees well with indium doped nanowires. This provides a non-destructive technique to estimate doping for 1D structures as compared to the traditional FET approach. Furthermore, these indium doped nanowires can be a potential candidate for transparent conducting oxides applications and spintronic devices with controlled growth mechanism.

  10. Estimating dermal transfer of copper particles from the surfaces of pressure-treated lumber and implications for exposure.

    PubMed

    Platten, William E; Sylvest, Nicholas; Warren, Casey; Arambewela, Mahendranath; Harmon, Steve; Bradham, Karen; Rogers, Kim; Thomas, Treye; Luxton, Todd Peter

    2016-04-01

    Lumber pressure-treated with micronized copper was examined for the release of copper and copper micro/nanoparticles using a surface wipe method to simulate dermal transfer. In 2003, the wood industry began replacing CCA treated lumber products for residential use with copper based formulations. Micronized copper (nano to micron sized particles) has become the preferred treatment formulation. There is a lack of information on the release of copper, the fate of the particles during dermal contact, and the copper exposure level to children from hand-to-mouth transfer. For the current study, three treated lumber products, two micronized copper and one ionic copper, were purchased from commercial retailers. The boards were left to weather outdoors for approximately 1year. Over the year time period, hand wipe samples were collected periodically to determine copper transfer from the wood surfaces. The two micronized formulations and the ionic formulation released similar levels of total copper. The amount of copper released was high initially, but decreased to a constant level (~1.5mgm(-2)) after the first month of outdoor exposure. Copper particles were identified on the sampling cloths during the first two months of the experiment, after which the levels of copper were insufficient to collect interpretable data. After 1month, the particles exhibited minimal changes in shape and size. At the end of 2-months, significant deterioration of the particles was evident. Based on the wipe sample data, a playground visit may result in a potential exposure to 2.58mg of copper, which is near or exceeds the daily tolerable upper intake limits for children under the age of 8, if completely ingested through hand-to-mouth transfer. While nanoparticles were found, there is not enough information to estimate the exposure from the released particles due to a lack of published literature on copper carbonate.

  11. Synthesis of indium nanoclusters and formation of thin film contacts on plastic substrates for organic and flexible electronics applications.

    PubMed

    Shi, Frank F; Bulkowski, Michal; Hsieh, K C

    2007-07-01

    In this work, we described the processes of synthesizing free-standing indium nanoclusters using inverse micelles and microemulsions as well as synthesizing organic-encapsulated indium nanoclusters using alkanethiols as the organic encapsulants. The synthesized organic-encapsulated indium nanoclusters have demonstrated the feasibilities to be used as plastic compatible soft metal contacts for emerging organic devices. The homogeneously distributed indium nanoclusters with sizes of 10-30 nm have been fabricated on a few different plastic substrates. By changing the alkanethiol carbon chain length and the sizes of the indium nanoclusters, the annealing temperature required to form low-resistance indium thin film conductors has been reduced to 80-100 °C, which is acceptable for a variety of organic thin films.

  12. Copper stable isotopes to trace copper behavior in wetland systems.

    PubMed

    Babcsányi, Izabella; Imfeld, Gwenaël; Granet, Mathieu; Chabaux, François

    2014-05-20

    Wetlands are reactive zones of the landscape that can sequester metals released by industrial and agricultural activities. Copper (Cu) stable isotope ratios (δ(65)Cu) have recently been used as tracers of transport and transformation processes in polluted environments. Here, we used Cu stable isotopes to trace the behavior of Cu in a stormwater wetland receiving runoff from a vineyard catchment (Alsace, France). The Cu loads and stable isotope ratios were determined in the dissolved phase, suspended particulate matter (SPM), wetland sediments, and vegetation. The wetland retained >68% of the dissolved Cu and >92% of the SPM-bound Cu, which represented 84.4% of the total Cu in the runoff. The dissolved Cu became depleted in (65)Cu when passing through the wetland (Δ(65)Cuinlet-outlet from 0.03‰ to 0.77‰), which reflects Cu adsorption to aluminum minerals and organic matter. The δ(65)Cu values varied little in the wetland sediments (0.04 ± 0.10‰), which stored >96% of the total Cu mass within the wetland. During high-flow conditions, the Cu flowing out of the wetland became isotopically lighter, indicating the mobilization of reduced Cu(I) species from the sediments and Cu reduction within the sediments. Our results demonstrate that the Cu stable isotope ratios may help trace Cu behavior in redox-dynamic environments such as wetlands.

  13. Copper@polypyrrole nanocables

    PubMed Central

    2012-01-01

    A simple hydrothermal redox reaction between microcrystalline CuOHCl and pyrrole leads to the isolation of striking nanostructures formed by polypyrrole-coated copper nanocables. These multicomponent cables that feature single-crystalline face-centered cubic Cu cores (ca. 300 nm wide and up to 200 μm long) are smoothly coated by conducting polypyrrole, which in addition to its functionality, offers protection against oxidation of the metal core. PMID:23009710

  14. Apparatus for Precise Indium-Bump Bonding of Microchips

    NASA Technical Reports Server (NTRS)

    Wild, Larry; Mulder, Jerry; Alvarado, Nicholas

    2005-01-01

    An improved apparatus has been designed and built for use in precise positioning and pressing of a microchip onto a substrate (which could, optionally, be another microchip) for the purpose of indium-bump bonding. The apparatus (see figure) includes the following: A stereomicroscope, A stage for precise positioning of the microchip in rotation angle (theta) about the nominally vertical pressing axis and in translation along two nominally horizontal coordinate axes (x and y), and An actuator system that causes a bonding tip to press the microchip against the substrate with a precisely controlled force. In operation, the microscope and the stage are used to position the microchip under the bonding tip and to align the indium bumps on the chip and the substrate, then the actuator system is used to apply a prescribed bonding force for a prescribed time. The improved apparatus supplants a partly similar prior apparatus that operated with less precision and repeatability, producing inconsistent and unreliable bonds. Results of the use of the prior apparatus included broken microchips, uneven bonds, and bonds characterized, variously, by overcompression or undercompression. In that apparatus, the bonding force was generated and controlled by use of a micrometer head positioned over the center of a spring-loaded scale, and the force was applied to the microchip via the scale, which was equipped for digital readout of the force. The inconsistency of results was attributed to the following causes: It was not possible to control the bonding force with sufficient precision or repeatability. Particularly troublesome was the inability to control the force at levels less than the weight of 150 g. Excessive compliance in the spring-loaded scale, combined with deviations from parallelarity of the substrate and bonding-tip surfaces, gave rise to nonuniformity in the pressure applied to the microchip, thereby generating excessive stresses and deformations in the microchip. In the

  15. Direct Production of Copper

    NASA Astrophysics Data System (ADS)

    Victorovich, G. S.; Bell, M. C.; Diaz, C. M.; Bell, J. A. E.

    1987-09-01

    The use of commercially pure oxygen in flash smelting a typical chalcopyrite concentrate or a low grade comminuted matte directly to copper produces a large excess of heat. The heat balance is controlled by adjusting the calorific value of the solid feed. A portion of the sulfide material is roasted to produce a calcine which is blended with unroasted material, and the blend is then autogeneously smelted with oxygen and flux directly to copper. Either iron silicate or iron calcareous slags are produced, both being subject to a slag cleaning treatment. Practically all of the sulfur is contained in a continuous stream of SO2 gas, most of which is strong enough for liquefaction. A particularly attractive feature of these technologies is that no radically new metallurgical equipment needs to be developed. The oxygen smelting can be carried out not only in the Inco type flash furnace but in other suitable smelters such as cyclone furnaces. Another major advantage stems from abolishion of the ever-troublesome converter aisle, which is replaced with continuous roasting of a fraction of the copper sulfide feed.

  16. Aging, stressing and solderability of electroplated and electroless copper

    SciTech Connect

    Sorensen, N.R.; Hosking, F.M.

    1995-08-01

    Organic inhibitors can be used to prevent corrosion of metals have application in the electronics industry as solderability preservatives. We have developed a model to describe the action of two inhibitors (benzotriazole and imidazole) during the environmental aging and soldering process. The inhibitors bond with the metal surface and form a barrier that prevents or retards oxidation. At soldering temperatures, the metal-organic complex breaks down leaving an oxide-free metal surface that allows excellent wetting by the molten solder. The presence of the inhibitor retards the wetting rate relative to clean copper but provides a vast improvement relative to oxidized copper.

  17. Recovery of copper as zero-valent phase and/or copper oxide nanoparticles from wastewater by ferritization.

    PubMed

    Heuss-Aßbichler, Soraya; John, Melanie; Klapper, Daniel; Bläß, Ulrich W; Kochetov, Gennadii

    2016-10-01

    Recently the focus of interest changed from merely purification of the waste water to recover heavy metals. With the slightly modified ferritization process presented here it is possible to decrease initial Cu(2+) concentrations up to 10 g/l to values <0.3 mg/l. The recovery rates of copper of all experiments are in the rage of 99.98 to almost 100%. Copper can be precipitated as oxide or zero valent metal (almost) free of hydroxide. All precipitates are exclusively of nanoparticle size. The phase assemblage depends strongly on experimental conditions as e.g. reaction temperature, pH-value, initial concentration and ageing time and condition. Three different options were developed depending on the reaction conditions. Option 1.) copper incorporation into the ferrite structure ((Cu,Fe)Fe2O4) and/or precipitation as cuprite (Cu2O) and zero-valent copper, option 2.) copper incorporation into the ferrite structure and/or precipitation as cuprite and/or tenorite (CuO) and option 3.) copper precipitation as tenorite. Ferrite is formed by the oxidation of GR in alkaline solution without additional oxygen supply. The chemistry reaches from pure magnetite up to 45% copper ferrite component. First experiments with wastewater from electroplating industry confirm the results obtained from synthetic solutions. In all cases the volume of the precipitates is extremely low compared to typical wastewater treatment by hydroxide precipitation. Therefore, pollution and further dissipation of copper can be avoided using this simple and economic process.

  18. Recovery of copper as zero-valent phase and/or copper oxide nanoparticles from wastewater by ferritization.

    PubMed

    Heuss-Aßbichler, Soraya; John, Melanie; Klapper, Daniel; Bläß, Ulrich W; Kochetov, Gennadii

    2016-10-01

    Recently the focus of interest changed from merely purification of the waste water to recover heavy metals. With the slightly modified ferritization process presented here it is possible to decrease initial Cu(2+) concentrations up to 10 g/l to values <0.3 mg/l. The recovery rates of copper of all experiments are in the rage of 99.98 to almost 100%. Copper can be precipitated as oxide or zero valent metal (almost) free of hydroxide. All precipitates are exclusively of nanoparticle size. The phase assemblage depends strongly on experimental conditions as e.g. reaction temperature, pH-value, initial concentration and ageing time and condition. Three different options were developed depending on the reaction conditions. Option 1.) copper incorporation into the ferrite structure ((Cu,Fe)Fe2O4) and/or precipitation as cuprite (Cu2O) and zero-valent copper, option 2.) copper incorporation into the ferrite structure and/or precipitation as cuprite and/or tenorite (CuO) and option 3.) copper precipitation as tenorite. Ferrite is formed by the oxidation of GR in alkaline solution without additional oxygen supply. The chemistry reaches from pure magnetite up to 45% copper ferrite component. First experiments with wastewater from electroplating industry confirm the results obtained from synthetic solutions. In all cases the volume of the precipitates is extremely low compared to typical wastewater treatment by hydroxide precipitation. Therefore, pollution and further dissipation of copper can be avoided using this simple and economic process. PMID:27290656

  19. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Rossow, U.; Hoffmann, L.; Bremers, H.; Buß, E. R.; Ketzer, F.; Langer, T.; Hangleiter, A.; Mehrtens, T.; Schowalter, M.; Rosenauer, A.

    2015-03-01

    We study the incorporation of indium into AlxGa1-x N/GaN quantum well (QW) structures with high indium concentrations above 25% for QW thicknesses in the range 2 nm down to half a c-lattice constant under pulsed and continuous growth conditions. We want to clarify which processes limit the incorporation of indium and lead to a degrading layer structure. The data are discussed in the context of the adlayer proposed by theory (Northrup et al., 2000) [1]. The interplay of the adlayer with the incoming flux, the high desorption rate and segregation of indium can consistently explain the various observed phenomena.

  20. Stem cell recovering effect of copper-free GHK in skin.

    PubMed

    Choi, Hye-Ryung; Kang, Youn-A; Ryoo, Sun-Jong; Shin, Jung-Won; Na, Jung-Im; Huh, Chang-Hun; Park, Kyoung-Chan

    2012-11-01

    The peptide Gly-His-Lys (GHK) is a naturally occurring copper(II)-chelating motifs in human serum and cerebrospinal fluid. In industry, GHK (with or without copper) is used to make hair and skin care products. Copper-GHK plays a physiological role in the process of wound healing and tissue repair by stimulating collagen synthesis in fibroblasts. We also reported that copper-GHK promotes the survival of basal stem cells in the skin. However, the effects of copper-free GHK (GHK) have not been investigated well. In this study, the effects of GHK were studied using cultured normal human keratinocytes and skin equivalent (SE) models. In monolayer cultured keratinocytes, GHK increased the proliferation of keratinocytes. When GHK was added during the culture of SE models, the basal cells became more cuboidal than control model. In addition, there was linear and intense staining of α6 and β1 integrin along the basement membrane. The number of p63 and proliferating cell nuclear antigen positive cells was also significantly increased in GHK-treated SEs than in control SEs. Western blot and slide culture experiment showed that GHK increased the expression of integrin by keratinocytes. All these results showed that GHK increased the stemness and proliferative potential of epidermal basal cells, which is associated with increased expression of integrin. In conclusion, copper-free GHK showed similar effects with copper-GHK. Thus, it can be said that copper-free GHK can be used in industry to obtain the effects of copper-GHK in vivo. Further study is necessary to explore the relationship between copper-free GHK and copper-GHK. PMID:23019153

  1. Oxidation Mechanism of Copper Selenide

    NASA Astrophysics Data System (ADS)

    Taskinen, Pekka; Patana, Sonja; Kobylin, Petri; Latostenmaa, Petri

    2014-09-01

    The oxidation mechanism of copper selenide was investigated at deselenization temperatures of copper refining anode slimes. The isothermal roasting of synthetic, massive copper selenide in flowing oxygen and oxygen - 20% sulfur dioxide mixtures at 450-550 °C indicate that in both atmospheres the mass of Cu2Se increases as a function of time, due to formation of copper selenite as an intermediate product. Copper selenide oxidises to copper oxides without formation of thick copper selenite scales, and a significant fraction of selenium is vaporized as SeO2(g). The oxidation product scales on Cu2Se are porous which allows transport of atmospheric oxygen to the reaction zone and selenium dioxide vapor to the surrounding gas. Predominance area diagrams of the copper-selenium system, constructed for selenium roasting conditions, indicate that the stable phase of copper in a selenium roaster gas with SO2 is the sulfate CuSO4. The cuprous oxide formed in decomposition of Cu2Se is further sulfated to CuSO4.

  2. Copper corrosion in coastal Oregon

    SciTech Connect

    Ballard, Sophie J.; Cramer, Stephen D.; Covino, Bernard S. Jr.; Holcomb, Gordon R.

    1998-01-01

    The US Department of Energy is studying the atmospheric corrosion performance of copper and other metals along the Oregon coast. Only the copper results will be presented in this paper. Atmospheric corrosion measurements of copper samples were made at seven bridges, eight coastal communities, and three inland reference sites to quantify and understand the effect of high chloride environments on the corrosion performance of copper. The materials were atmospherically exposed for 1, 2, and 3 years to examine the effects of sheltering, orientation, distance from the ocean, and coastal microclimates on the rate of corrosion and the composition of the corrosion film.

  3. Localization of indium-111 leukocytes in noninfected neoplasms

    SciTech Connect

    Lamki, L.M.; Kasi, L.P.; Haynie, T.P.

    1988-12-01

    Indium-111-labeled autologous leukocyte studies in general carry a high sensitivity, specificity, and accuracy for the investigation of infections and abscesses. However, past studies have described sporadic cases in which In leukocytes localized in tumors. Our experience using In leukocytes for the investigation of fever of unknown origin in cancer patients, however, indicates a relatively high incidence of In leukocyte localization in noninfected neoplasms. Out of the 61 patients studied for fever of unknown origin, 21 patients (34%) manifested abnormal localization of In leukocytes in neoplasms without clinical evidence of infection. These included patients with abnormal localization in: (a) lymph nodes, (b) soft-tissue tumors, and (c) bone neoplasms. The tumors included both primary and secondary lesions, and hematologic as well as solid tumors. The mechanism of In leukocyte localization in tumors is still not completely explained. Interpretations of In leukocyte studies in cancer patients with fever should take into consideration the possibility that localization may occur in neoplastic tissue per se and does not always indicate the presence of infection.

  4. Indium-111-labeled platelet scintigraphy in carotid atherosclerosis

    SciTech Connect

    Minar, E.; Ehringer, H.; Dudczak, R.; Schoefl, R.J.; Jung, M.; Koppensteiner, R.; Ahmadi, R.; Kretschmer, G.

    1989-01-01

    We evaluated platelet accumulation in carotid arteries by means of a dual-radiotracer method, using indium-111-labeled platelets and technetium-99m-labeled human serum albumin, in 123 patients (92 men, 31 women; median age 60 years). Sixty patients had symptoms of transient ischemic carotid artery disease, and 63 patients with peripheral arterial occlusive disease served as controls. Antiplatelet treatment with acetylsalicylic acid was taken by 53 of the 123 patients. In 36 of the 60 symptomatic patients, platelet scintigraphy was repeated 3-4 days after carotid endarterectomy. Comparison of different scintigraphic parameters (platelet accumulation index and percent of the injected dose of labeled platelets at the carotid bifurcation) showed no significant differences between symptomatic and asymptomatic patients, and the severity of stenosis and the presence of plaque ulceration also had no influence on the parameters. There was no difference between patients with a short (less than 4 weeks) or long (greater than 4 weeks) interval from the last transient ischemic attack to scintigraphy and no difference between patients with or without antiplatelet treatment. Classifying the patients according to plaque morphology judged by high-resolution real-time ultrasonography also demonstrated no differences. No significant correlation was found between any scintigraphic parameter and other platelet function parameters such as platelet survival time, platelet turnover rate, and concentration of platelet-specific proteins. Quantification of platelet deposition after carotid endarterectomy in 36 patients demonstrated a significant increase of the median platelet accumulation index and the percent injected dose index.

  5. Using Indium Tin Oxide To Mitigate Dust on Viewing Ports

    NASA Technical Reports Server (NTRS)

    2008-01-01

    NASA plans to use a number of onboard viewing ports to measure lunar regolith in situ and to monitor robotic and human activities on the lunar or Martian surface. Because of the size and abundance of dust particles on these bodies, the potential for dust to occlude viewing ports and windows is high enough to threaten system lifetime and reliability, especially when activities rely on relaying video to either a habitat module or controllers on Earth. This project uses a technology being developed by KSC's Electrostatics and Surface Physics Laboratory to remove dust from windowlike surfaces. The technology applies an alternating electric potential to interlaced electrodes. In this application, we use indium tin oxide (ITO) to create various electrode patterns in order to determine the most reliable pattern for dust removal. This technology has application to systems where optical clarity is important. Specifically, this project considers the in situ resource utilization (ISRU) application of a viewing port for Raman spectroscopy, where the electrode pattern on glass would be coated with a scratch-resistant sapphire film (Al2O3).

  6. Comparative performance of diffused junction indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.; Parat, K. K.

    1987-01-01

    A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.

  7. Structural Properties of Amorphous Indium-Based Oxides

    NASA Astrophysics Data System (ADS)

    Khanal, Rabi; Medvedeva, Julia

    2014-03-01

    Amorphous transparent conducting and semiconducting oxides exhibit similar or even superior properties to those observed in their crystalline counterparts. To understand how the structural properties change upon amorphization and how chemical composition affects the local and long-range structure of the amorphous oxides, we employ first-principles molecular dynamics to generate amorphous In-X-O with X =Zn, Ga, Sn, Ge, Y, or Sc, and compare their local structure features to those obtained for amorphous and crystalline indium oxide. The results reveal that the short-range structure of the Metal-O polyhedra is generally preserved in the amorphous oxides; however, different metals (In and X) show quantitatively or qualitatively different behavior. Some of the metals retain their natural distances and/or coordination; while others allow for a highly distorted environment and thus favor ``defect'' formation under variable oxygen conditions. At the same time, we find that the presence of X increases both the average In-O coordination and the number of the 6-coordinated In atoms as compared to those in IO. The improved In coordination may be responsible for the observed reduction in the carrier concentration as the substitution level in In-X-O increases.

  8. A Conductometric Indium Oxide Semiconducting Nanoparticle Enzymatic Biosensor Array

    PubMed Central

    Lee, Dongjin; Ondrake, Janet; Cui, Tianhong

    2011-01-01

    We report a conductometric nanoparticle biosensor array to address the significant variation of electrical property in nanomaterial biosensors due to the random network nature of nanoparticle thin-film. Indium oxide and silica nanoparticles (SNP) are assembled selectively on the multi-site channel area of the resistors using layer-by-layer self-assembly. To demonstrate enzymatic biosensing capability, glucose oxidase is immobilized on the SNP layer for glucose detection. The packaged sensor chip onto a ceramic pin grid array is tested using syringe pump driven feed and multi-channel I–V measurement system. It is successfully demonstrated that glucose is detected in many different sensing sites within a chip, leading to concentration dependent currents. The sensitivity has been found to be dependent on the channel length of the resistor, 4–12 nA/mM for channel lengths of 5–20 μm, while the apparent Michaelis-Menten constant is 20 mM. By using sensor array, analytical data could be obtained with a single step of sample solution feeding. This work sheds light on the applicability of the developed nanoparticle microsensor array to multi-analyte sensors, novel bioassay platforms, and sensing components in a lab-on-a-chip. PMID:22163696

  9. Indium phosphide nanowires and their applications in optoelectronic devices

    PubMed Central

    Zafar, Fateen

    2016-01-01

    Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core–shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed. PMID:27118920

  10. Pulsed laser deposition of nanostructured indium-tin-oxide film

    NASA Astrophysics Data System (ADS)

    Yong, Thian Kok; Nee, Chen Hon; Yap, Seong Shan; Siew, Wee Ong; Sáfran, György; Yap, Yoke Kin; Tou, Teck Yong

    2010-08-01

    Effects of O2, N2, Ar and He on the formation of micro- and nanostructured indium tin oxide (ITO) thin films were investigated in pulsed Nd:YAG laser deposition on glass substrate. For O2 and Ar, ITO resistivity of <= 4 × 10-4 Ωcm and optical transmittance of > 90% were obtained with substrate temperature of 250 °C. For N2 and He, low ITO resisitivity could be obtained but with poor optical transmittance. SEM images show nano-structured ITO thin films for all gases, where dense, larger and highly oriented, microcrystalline structures were obtained for deposition in O2 and He, as revealed from the XRD lines. EDX results indicated the inclusion of Ar and N2 at the expense of reduced tin (Sn) content. When the ITO films were applied for fabrication of organic light emitting devices (OLED), only those deposited in Ar and O2 produced comparable performance to single-layer OLED fabricated on the commercial ITO.

  11. Nanocrystalline zinc indium vanadate: a novel photocatalyst for hydrogen generation.

    PubMed

    Mahapure, Sonali A; Ambekar, Jalindar D; Nikam, Latesh K; Marimuthu, Ramadoss; Kulkarni, Milind V; Kale, Bharat B

    2011-08-01

    Hydrogen is a future fuel and hence production of cheap hydrogen is an important area of research. Recently, the photocatalysts were used to generate hydrogen from water and hydrogen sulfide splitting under solar light. Hence, we designed Zinc Indium Vanadate, a novel visible light active photocatalyst and used for the generation of hydrogen by using solar light. We have demonstrated the synthesis of ZnIn2V2O9 (ZIV) catalyst by sonochemical route using NH4VO3, In (NO3)3 and Zn(CH3COO)2 as a precursors and PVP as a capping agent. The obtained product was further characterized by XRD, UV-DRS and FESEM. The XRD pattern reveals the existence of monoclinic crystal structure and broader peaks indicating the nanocrystalline nature of the material. The particle size was observed in the range of 50-70 nm. The optical study showed the absorption edge cut off at 520 nm with estimated band gap about 2.3 eV. Considering the band gap in visible range, ZnIn2V2O9 was used as a photocatalyst for photodecomposition of H2S under visible light irradiation to produce hydrogen. We observed excellent photocatalytic activity for the hydrogen generation by using this photocatalyst. PMID:22103105

  12. Finite-size effects in amorphous indium oxide

    NASA Astrophysics Data System (ADS)

    Mitra, Sreemanta; Tewari, Girish C.; Mahalu, Diana; Shahar, Dan

    2016-04-01

    We study the low-temperature magnetotransport properties of several highly disordered amorphous indium oxide (a:InO) samples. Simultaneously fabricated devices comprising a two-dimensional (2D) film and 10 -μ m -long wires of different widths were measured to investigate the effect of size as we approach the 1D limit, which is around 4 times the correlation length, and happens to be around 100 nm for a:InO. The film and the wires showed magnetic field (B )-induced superconductor to insulator transition (SIT). In the superconducting side, the resistance increased with decrease in wire width, whereas an opposite trend is observed in the insulating side. We find that this effect can be explained in light of charge-vortex duality picture of the SIT. Resistance of the 2D film follows an activated behavior over the temperature (T ), whereas, the wires show a crossover from the high-T -activated to a T -independent behavior. At high-temperature regime the wires' resistance follow the film's until they deviate and became independent of T . We find that the temperature at which this deviation occurs evolves with the magnetic field and the width of the wire, which show the effect of finite size on the transport.

  13. Indium oxide diffusion barriers for Al/Si metallizations

    NASA Astrophysics Data System (ADS)

    Kolawa, E.; Garland, C.; Tran, L.; Nieh, C. W.; Molarius, J. M.; Flick, W.; Nicolet, M.-A.; Wei, J.

    1988-12-01

    Indium oxide (In2O3) films were prepared by reactive rf sputtering of an In target in O2/Ar plasma. We have investigated the application of these films as diffusion barriers in /In2O3/Al and /TiSi2.3/In2O3/Al metallizations. Scanning transmission electron microscopy together with energy dispersive analysis of x ray of cross-sectional Si/In2O3/Al specimens, and electrical measurements on shallow n+-p junction diodes were used to evaluate the diffusion barrier capability of In2O3 films. We find that 100-nm-thick In2O3 layers prevent the intermixing between Al and Si in /In2O3/Al contacts up to 650 °C for 30 min, which makes this material one of the best thin-film diffusion barriers on record between Al and Si. (The Si-Al eutectic temperature is 577 °C, Al melts at 660 °C.) When a contacting layer of titanium silicide is incorporated to form a /TiSi2.3/In2O3/Al metallization structure, the thermal stability of the contact drops to 600 °C for 30 min heat treatment.

  14. Experiments with the low melting indium-bismuth alloy system

    NASA Technical Reports Server (NTRS)

    Krepski, Richard P.

    1992-01-01

    The following is a laboratory experiment designed to create an interest in and to further understanding of materials science. The primary audience for this material is the junior high school or middle school science student having no previous familiarity with the material, other than some knowledge of temperature and the concepts of atoms, elements, compounds, and chemical reactions. The objective of the experiment is to investigate the indium-bismuth alloy system. Near the eutectic composition, the liquidus is well below the boiling point of water, allowing simple, minimal hazard casting experiments. Such phenomena as metal oxidation, formation of intermetallic compound crystals, and an unusual volume increase during solidification could all be directly observed. A key concept for students to absorb is that properties of an alloy (melting point, mechanical behavior) may not correlate with simple interpolation of properties of the pure components. Discussion of other low melting metals and alloys leads to consideration of environmental and toxicity issues, as well as providing some historical context. Wetting behavior can also be explored.

  15. Prosthetic graft infection: limitations of indium white blood cell scanning.

    PubMed

    Brunner, M C; Mitchell, R S; Baldwin, J C; James, D R; Olcott, C; Mehigan, J T; McDougall, I R; Miller, D C

    1986-01-01

    The lack of a rapid, noninvasive, and accurate method to confirm or rule out prosthetic graft infection continues to constitute a compelling and vexing clinical problem. A host of adjunctive diagnostic techniques has been used in the past, but early promising results subsequently have usually not yielded acceptable sensitivity (reflecting false negatives) and specificity (reflecting false positive) data. White blood cell (WBC) indium 111 scanning has recently been added to this list. The utility and accuracy of 111In WBC scans were assessed by retrospective review of WBC scan results in 70 patients undergoing evaluation for possible prosthetic graft infection over a 7-year period. Operative and autopsy data (mean follow-up, 18 months for survivors with negative scans) were used to confirm the 22 positive, 45 negative, and three equivocal WBC scans. The false positive rate (+/- 70% confidence limits) was 36% +/- 6% (n = 8) among the 22 patients with positive scans (44% +/- 6% [11 of 25] if the three equivocal scans are included as false positive), yielding a specificity of 85% +/- 5% and an overall accuracy rate of 88% +/- 4% (80% +/- 5% and 84% +/- 5%, respectively, if the three equivocal cases are considered as false positive). All three patients with equivocal scans ultimately were judged not to have prosthetic graft infection. As implied by the high accuracy rate, the sensitivity of the test was absolute (100% [14 of 14]); there were no false negative results. (ABSTRACT TRUNCATED AT 250 WORDS)

  16. Prosthetic graft infection: limitations of indium white blood cell scanning

    SciTech Connect

    Brunner, M.C.; Mitchell, R.S.; Baldwin, J.C.; James, D.R.; Olcott C 4; Mehigan, J.T.; McDougall, I.R.; Miller, D.C.

    1986-01-01

    The lack of a rapid, noninvasive, and accurate method to confirm or rule out prosthetic graft infection continues to constitute a compelling and vexing clinical problem. A host of adjunctive diagnostic techniques has been used in the past, but early promising results subsequently have usually not yielded acceptable sensitivity (reflecting false negatives) and specificity (reflecting false positive) data. White blood cell (WBC) indium 111 scanning has recently been added to this list. The utility and accuracy of /sup 111/In WBC scans were assessed by retrospective review of WBC scan results in 70 patients undergoing evaluation for possible prosthetic graft infection over a 7-year period. Operative and autopsy data (mean follow-up, 18 months for survivors with negative scans) were used to confirm the 22 positive, 45 negative, and three equivocal WBC scans. The false positive rate (+/- 70% confidence limits) was 36% +/- 6% (n = 8) among the 22 patients with positive scans (44% +/- 6% (11 of 25) if the three equivocal scans are included as false positive), yielding a specificity of 85% +/- 5% and an overall accuracy rate of 88% +/- 4% (80% +/- 5% and 84% +/- 5%, respectively, if the three equivocal cases are considered as false positive). All three patients with equivocal scans ultimately were judged not to have prosthetic graft infection. As implied by the high accuracy rate, the sensitivity of the test was absolute (100% (14 of 14)); there were no false negative results.

  17. Crumpled indium-tin-oxide electrodes for transparency tuning

    NASA Astrophysics Data System (ADS)

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih Keong

    2016-04-01

    Optical transparency of an indium-tin-oxide (ITO) thin film depends on its topography. Wrinkling of ITO thin film can reduce normal transmittance or visibility by scattering the incident light away. In this paper, we study topography change of ITO thin film and its effect on normal transmittance of light. Coating of ITO thin film on adhesive poly-acrylate elastomer forms wrinkles and folds when subjected to mechanical compression and surface buckling. At excessive compression, such as 25% equi-biaxial, folds of the ITO thin film are so deep and convoluted like crumpling of a piece of paper. This crumpled form of ITO thin film can well obscure the light passing even though a flat ITO thin film is transparent. Surprisingly, the crumpled ITO thin film remains continuous and conductive even with 25% equi-biaxial compression despite the fact that ITO is known to be brittle. These crumpled ITO thin films were subsequently used to make compliant electrodes for Dielectric elastomer actuator (DEA). These crumpled ITO thin film can be reversibly unfolded through the DEA's areal expansion. This DEA with 14.2% equi-biaxially crumpled ITO thin films can produce 37% areal expansion and demonstrate an optical transmittance change from 39.14% to 52.08% at 550nm wavelength.

  18. Indium-/sup 111/ leukocyte imaging in appendicitis

    SciTech Connect

    Navarro, D.A.; Weber, P.M.; Kang, I.Y.; dos Remedios, L.V.; Jasko, I.A.; Sawicki, J.E.

    1987-04-01

    Indium-/sup 111/-labeled leukocyte scintigraphy was applied to the diagnosis of acute appendicitis. Thirty-two patients observed in the hospital for possible appendicitis were prospectively studied. Scanning was done 2 hr after radiopharmaceutical injection. Thirteen scans were positive for acute appendicitis, and all but one were confirmed at laparotomy. In addition, two cases of colitis and two cases of peritonitis were detected. Of 15 negative studies, 11 had a benign course. Four patients with negative studies had laparotomy; two were found to have appendicitis and two had a normal appendix. Of 14 proven cases of appendicitis, 12 scans were positive for appendicitis with one false-positive scan, providing a sensitivity of 86%. Specificity was 93%: all negative cases except one had negative scans. Overall accuracy was 91% (29 of 32), comparing favorably with the accepted false-positive laparotomy rate of 25%. Use of In-/sup 111/-labeled leukocyte scintigraphy serves to reduce the false-positive laparotomy rate and to shorten the clinical observation time in patients with acute appendicitis.

  19. Broadband resonances in indium-tin-oxide nanorod arrays

    SciTech Connect

    Li, Shi-Qiang E-mail: r-chang@northwestern.edu; Sakoda, Kazuaki; Ketterson, John B.; Chang, Robert P. H. E-mail: r-chang@northwestern.edu

    2015-07-20

    There is currently much discussion within the nanophotonics community regarding the origin of wavelength selective absorption/scattering of light by the resonances in nanorod arrays. Here, we report a study of resonances in ordered indium-tin-oxide nanorod arrays resulting from waveguide-like modes. We find that with only a 2.4% geometrical coverage, micron-length nanorod arrays interact strongly with light across a surprisingly wide band from the visible to the mid-infrared, resulting in less than 10% transmission. Simulations show excellent agreement with our experimental observations. The field profile in the vicinity of the rods obtained from simulations shows that the electric field is mainly localized on the surfaces of the nanorods for all resonances. Based on our analysis, the resonances in the visible are different in character from those in the infrared. When light is incident on the array, part of it propagates in the space between the rods and part of it is guided within the rods. The phase difference (interference) at the ends of the rods forms the basis for the resonances in the visible region. The resonances in the infrared are Fabry-Perot-like resonances involving standing surface waves between the opposing ends of the rods. Simple analytical formulae predict the spectral positions of these resonances. It is suggested that these phenomena can be utilized for wavelength-selective photodetectors, modulators, and nanorod-based solar cells.

  20. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2001-01-01

    An overview of the industrial diamond industry is provided. More than 90 percent of the industrial diamond consumed in the U.S. and the rest of the world is manufactured diamond. Ireland, Japan, Russia, and the U.S. produce 75 percent of the global industrial diamond output. In 2000, the U.S. was the largest market for industrial diamond. Industrial diamond applications, prices for industrial diamonds, imports and exports of industrial diamonds, the National Defense Stockpile of industrial diamonds, and the outlook for the industrial diamond market are discussed.

  1. A Study of the Preparation and Properties of Antioxidative Copper Inks with High Electrical Conductivity.

    PubMed

    Tsai, Chia-Yang; Chang, Wei-Chen; Chen, Guan-Lin; Chung, Cheng-Huan; Liang, Jun-Xiang; Ma, Wei-Yang; Yang, Tsun-Neng

    2015-12-01

    Conductive ink using copper nanoparticles has attracted much attention in the printed electronics industry because of its low cost and high electrical conductivity. However, the problem of easy oxidation under heat and humidity conditions for copper material limits the wide applications. In this study, antioxidative copper inks were prepared by dispersing the nanoparticles in the solution, and then conductive copper films can be obtained after calcining the copper ink at 250 °C in nitrogen atmosphere for 30 min. A low sheet resistance of 47.6 mΩ/□ for the copper film was measured by using the four-point probe method. Importantly, we experimentally demonstrate that the electrical conductivity of copper films can be improved by increasing the calcination temperature. In addition, these highly conductive copper films can be placed in an atmospheric environment for more than 6 months without the oxidation phenomenon, which was verified by energy-dispersive X-ray spectroscopy (EDS). These observations strongly show that our conductive copper ink features high antioxidant properties and long-term stability and has a great potential for many printed electronics applications, such as flexible display systems, sensors, photovoltaic cells, and radio frequency identification. PMID:26370132

  2. Regulation of Gene Expression in Neurospora crassa with a Copper Responsive Promoter

    PubMed Central

    Lamb, Teresa M.; Vickery, Justin; Bell-Pedersen, Deborah

    2013-01-01

    Precise control of gene expression is a powerful method to elucidate biological function, and protein overexpression is an important tool for industry and biochemistry. Expression of the Neurospora crassa tcu-1 gene (NCU00830), encoding a high-affinity copper transporter, is tightly controlled by copper availability. Excess copper represses, and copper depletion, via the use of a copper chelator, activates expression. The kinetics of induction and repression of tcu-1 are rapid, and the effects are long lived. We constructed a plasmid carrying the bar gene (for glufosinate selection) fused to the tcu-1 promoter. This plasmid permits the generation of DNA fragments that can direct integration of Ptcu-1 into any desired locus. We use this strategy to integrate Ptcu-1 in front of wc-1, a circadian oscillator and photoreceptor gene. The addition of excess copper to the Ptcu-1::wc-1 strain phenocopies a Δwc-1 strain, and the addition of the copper chelator, bathocuproinedisulfonic acid, phenocopies a wc-1 overexpression strain. To test whether copper repression can recapitulate the loss of viability that an essential gene knockout causes, we placed Ptcu-1 upstream of the essential gene, hpt-1. The addition of excess copper drastically reduced the growth rate as expected. Thus, this strategy will be useful to probe the biological function of any N. crassa gene through controlled expression. PMID:24142928

  3. Removal of copper from ferrous scrap

    DOEpatents

    Blander, Milton; Sinha, Shome N.

    1990-01-01

    A process for removing copper from ferrous or other metal scrap in which the scrap is contacted with a polyvalent metal sulfide slag in the presence of an excess of copper-sulfide forming additive to convert the copper to copper sulfide which is extracted into the slag to provide a ratio of copper in the slag to copper in the metal scrap of at least about 10.

  4. Removal of copper from ferrous scrap

    DOEpatents

    Blander, M.; Sinha, S.N.

    1990-05-15

    A process for removing copper from ferrous or other metal scrap in which the scrap is contacted with a polyvalent metal sulfide slag in the presence of an excess of copper-sulfide forming additive to convert the copper to copper sulfide which is extracted into the slag to provide a ratio of copper in the slag to copper in the metal scrap of at least about 10.

  5. Removal of copper from ferrous scrap

    DOEpatents

    Blander, M.; Sinha, S.N.

    1987-07-30

    A process for removing copper from ferrous or other metal scrap in which the scrap is contacted with a polyvalent metal sulfide slag in the presence of an excess of copper-sulfide forming additive to convert the copper to copper sulfide which is extracted into the slag to provide a ratio of copper in the slag to copper in the metal scrap of at least about 10.

  6. Short communication: Efficacy of copper sulfate hoof baths against digital dermatitis--Where is the evidence?

    PubMed

    Thomsen, Peter T

    2015-04-01

    Digital dermatitis is a major problem in modern dairy production because of decreased animal welfare and financial losses. Individual cow treatments are often seen as too time consuming by farmers, and walk-through hoof baths have therefore been used extensively to control digital dermatitis. For decades, copper sulfate hoof baths have been used to treat and prevent digital dermatitis. Copper sulfate has been referred to as the industry gold standard when it comes to hoof-bath chemicals. In several scientific studies testing the efficacy of other hoof-care products, copper sulfate has been used as a positive control, thereby indicating that copper sulfate has a known positive effect. However, this may not be the case. A dilemma may exist between (1) copper sulfate generally being perceived as being effective against digital dermatitis and (2) a possible lack of well-documented scientific evidence of this effect. The objective of this study was to evaluate the existing scientific literature to determine whether the efficacy of copper sulfate used in hoof baths against digital dermatitis has in fact been demonstrated scientifically. A systematic literature search identified 7 peer-reviewed journal articles describing the efficacy of copper sulfate in hoof baths as treatment or prevention of bovine digital dermatitis. Only 2 of the 7 studies compared copper sulfate to a negative control; most studies were relatively small, and often no clear positive effect of copper sulfate was demonstrated. In conclusion, the frequent claim that copper sulfate is widely reported to be effective is supported by little scientific evidence. Well-designed clinical trials evaluating the effect of copper sulfate against digital dermatitis compared with a negative control are needed. Until such studies have been made, the efficacy of copper sulfate in hoof baths against digital dermatitis remains largely unproven.

  7. Indium-substitution and indium-less case effects on structural and magnetic properties of yttrium-iron garnet

    NASA Astrophysics Data System (ADS)

    Nazlan, Rodziah; Hashim, Mansor; Ibrahim, Idza Riati; Idris, Fadzidah Mohd; Ismail, Ismayadi; Ab Rahman, Wan Norailiana Wan; Abdullah, Nor Hapishah; Zulkimi, Muhammad Misbah Muhammad; Mustaffa, Muhammad Syazwan

    2015-10-01

    The effect of indium (In) substitution in the dynamics of structure and ferrimagnetism of yttrium iron garnet (YIG) employing sintering temperature as a temporary agent of composition and structural changes was reported in this study. The nanoparticles of YIG powder samples with various In content (x=0.0-0.4) were prepared via the mechanical alloying (MA) technique. A brief, yet revealing characterization of the samples was carried out via transmission electron microscope, X-ray diffraction, Raman spectroscopy, B-H Hysteresisgraph, and LCR-metre. The X-ray diffraction analysis of the samples prepared via the MA indicates the formation of single phase YIG structure at much lower sintering temperature than that in the conventional ceramic technique. The lattice constant increases as In content increases which obeys Vegard's Law due to the larger In3+ ions replacing the smaller Fe3+ ions. The saturation induction increased reaching about 699.1 G for x=0.3 and decreased with further In substitution. Three stages of ordered magnetism formation were identified which attributed to development of crystallinity and larger grains for magnetic domain accommodation. The Curie temperature shows a decrement in their values with In content due to weakening of superexchange interactions. Raman shifts from 268.1 to 272.2 cm-1 with increasing In content were observed due to stress developed in the YIG crystal structure.

  8. Highly conductive indium zinc oxide prepared by reactive magnetron cosputtering technique using indium and zinc metallic targets

    SciTech Connect

    Tsai, T. K.; Chen, H. C.; Lee, J. H.; Huang, Y. Y.; Fang, J. S.

    2010-05-15

    Zn-doped In{sub 2}O{sub 3} film is frequently deposited from an oxide target; but the use of metallic target is increasingly expected as preparing the film with comparable properties. This work aimed to prepare a highly conductive and transparent Zn-doped In{sub 2}O{sub 3} thin film on Corning Eagle{sup 2000} glass substrate by magnetron cosputtering method using indium and zinc targets. Structural characterization was performed using x-ray diffraction and x-ray photoelectron spectroscopy. The film had an amorphous structure when the film was prepared on an unheated substrate, but had an In{sub 2}O{sub 3} polycrystalline structure when the film was deposited on 150 and 300 deg. C substrates. The electrical properties of the film were greatly affected by annealing; the Zn-doped In{sub 2}O{sub 3} film had a low resistivity of 6.1x10{sup -4} {Omega} cm and an average transmittance of 81.7% when the film was deposited without substrate heating and followed a 600 deg. C annealing.

  9. Effect of impurity on high pressure behavior of nano indium titanate

    SciTech Connect

    Chitnis, Abhishek Garg, Nandini; Mishra, A. K.; Pandey, K. K.; Sharma, Surinder M.; Singhal, Anshu

    2015-06-24

    Angle dispersive x-ray diffraction studies were carried out on a mixture of nano particles of indium titanate, indium oxide, and disordered TiO{sub 2} upto pressures of ∼ 45 GPa. Our studies show that indium titanate undergoes a partial decomposition to its constituent high pressure oxides. However, concomitantly a very small fraction of indium titanate transforms to a denser phase at ∼ 27.5 GPa. This transformation to new phase was found to be irreversible. At this pressure even cubic In{sub 2}O{sub 3} transformed to the In{sub 2}O{sub 3} (II) (iso-structural to Rh{sub 2}O{sub 3} (II)) phase, without any signature of the intermediate corundum phase. The high pressure In{sub 2}O{sub 3} (II) phase transforms to the corundum structure on release of pressure. These studies indicate that the presence of a large fraction of seed impurities could have facilitated the decomposition of indium titanate into its constituent oxides at the cost of its incomplete transformation to the high pressure denser phase.

  10. Bone scan: Indium-WBC correlation in the diagnosis of osteomyelitis of the foot

    SciTech Connect

    Eisenberg, B.; Wrege, S.S.; Altman, M.I.; Moore, J.W. )

    1989-11-01

    A retrospective study was performed of 20 podiatric cases using technetium-99m methylene diphosphonate three-phase bone scans along with indium-111 oxine leukocyte scans, as needed, to determine the presence and extent of osteomyelitis of the foot. Using criteria developed at our institution, the authors attempt to provide a mechanism to make a reliable diagnosis for osteomyelitis that has been supported by surgical/pathologic confirmation of long-term clinical follow-up. The sensitivity, using bone scans alone, was 100%, and specificity was 47%. Correlating bone and indium-111 leukocyte scans yielded a sensitivity of 100% with a specificity raised to 81%. Indium-111 leukocyte scans were used in 40% of cases when a definitive diagnosis for osteomyelitis could not be made on the basis of the three-phase bone scan or clinical presentation alone. Indium-111 leukocyte scans were also helpful in delineating the extent of the disease process. The authors present a standard technique for a 5-hour delayed imaging in the three-phase bone scan, as well as marking the foot in the indium-111 leukocyte scan with three routine views obtained for each imaging procedure, to ensure clinical accuracy.

  11. Atom-efficient metal-catalyzed cross-coupling reaction of indium organometallics with organic electrophiles.

    PubMed

    Pérez, I; Sestelo, J P; Sarandeses, L A

    2001-05-01

    The novel metal-catalyzed cross-coupling reaction of indium organometallics with organic electrophiles is described. Triorganoindium compounds (R(3)In) containing alkyl, vinyl, aryl, and alkynyl groups are efficiently prepared from the corresponding lithium or magnesium organometallics by reaction with indium trichloride. The cross-coupling reaction of R(3)In with aryl halides and pseudohalides (iodide 2, bromide 5, and triflate 4), vinyl triflates, benzyl bromides, and acid chlorides proceeds under palladium catalysis in excellent yields and with high chemoselectivity. Indium organometallics also react with aryl chlorides as under nickel catalysis. In the cross-coupling reaction the triorganoindium compounds transfer, in a clear example of atom economy, all three of the organic groups attached to the metal, as shown by the necessity of using only 34 mol % of indium. The feasibility of using R(3)In in reactions with different electrophiles, along with the high yields and chemoselectivities obtained, reveals indium organometallics to be useful alternatives to other organometallics in cross-coupling reactions.

  12. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2002-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  13. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  14. Frequency of myocardial indium-111 antimyosin uptake after uncomplicated coronary artery bypass grafting

    SciTech Connect

    van Vlies, B.; van Royen, E.A.; Visser, C.A.; Meyne, N.G.; van Buul, M.M.; Peters, R.J.; Dunning, A.J. )

    1990-11-15

    The reported incidence of myocardial damage after coronary artery bypass grafting (CABG) is highly related to the methods used. Since indium-111 monoclonal antimyosin antibody scintigraphy has been shown to be highly specific and sensitive for myocardial necrosis, even in small lesions, uptake of this radiotracer was evaluated after CABG. In 23 consecutive patients without previous myocardial infarction who underwent CABG for stable angina, 80 MBq indium-111 antimyosin was injected on the third postoperative day. Planar images were obtained 48 hours later and analyzed for myocardial uptake of indium-111 antimyosin. Scintigraphic results were related to creatine kinase MB levels, duration of both aortic cross-clamping and cardiopulmonary bypass, and electrocardiographic changes. In all patients surgical procedure and postoperative course was uncomplicated. Indium-111 antimyosin uptake was present in 19 of 23 patients (82%). It was diffused in 7 patients and localized in 12. No pathologic Q waves occurred postoperatively. Fourteen patients exhibited ST-segment changes. No good relation was found among indium-111 antimyosin uptake and creatine kinase MB levels, duration of cross-clamping or bypass, and ST-T changes. It is concluded that some degree of myocardial damage, though silent, is common after CABG.

  15. Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties

    PubMed Central

    2009-01-01

    Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L−1In2(SO4)3-0.002 mol L−1SeO2-0.02 mol L−1SDS-0.01 mol L−1citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS) and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template) and SDS (soft template). PMID:20592961

  16. Adsorption of indium(III) ions from aqueous solution using chitosan-coated bentonite beads.

    PubMed

    Calagui, Mary Jane C; Senoro, Delia B; Kan, Chi-Chuan; Salvacion, Jonathan W L; Futalan, Cybelle Morales; Wan, Meng-Wei

    2014-07-30

    Batch adsorption study was utilized in evaluating the potential suitability of chitosan-coated bentonite (CCB) as an adsorbent in the removal of indium ions from aqueous solution. The percentage (%) removal and adsorption capacity of indium(III) were examined as a function of solution pH, initial concentration, adsorbent dosage and temperature. The experimental data were fitted with several isotherm models, where the equilibrium data was best described by Langmuir isotherm. The mean energy (E) value was found in the range of 1-8kJ/mol, indicating that the governing type of adsorption of indium(III) onto CCB is essentially physical. Thermodynamic parameters, including Gibbs free energy, enthalpy, and entropy indicated that the indium(III) ions adsorption onto CCB was feasible, spontaneous and endothermic in the temperature range of 278-318K. The kinetics was evaluated utilizing the pseudo-first order and pseudo-second order model. The adsorption kinetics of indium(III) best fits the pseudo-second order (R(2)>0.99), which implies that chemical sorption as the rate-limiting step. PMID:24802798

  17. On the impact of indium distribution on the electronic properties in InGaN nanodisks

    SciTech Connect

    Benaissa, M. E-mail: benaissa@fsr.ac.ma; Sigle, W.; Aken, P. A. van; Ng, T. K.; Ooi, B. S.; El Bouayadi, R.; Jahangir, S.; Bhattacharya, P.

    2015-03-09

    We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations—plasmons—at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening. In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.

  18. Anodic stripping voltammetric determination of cadmium using a "mercury free" indium film electrode.

    PubMed

    Anandhakumar, Sukeri; Mathiyarasu, Jayaraman; Phani, Kanala Lakshimi Narasimha

    2013-10-01

    In this work, the determination of cadmium has been attempted using an indium film electrode in the presence of bromide ions as an additive, for the first time. The electrode was prepared in situ on a glassy carbon substrate and employed in combination with square wave anodic stripping voltammetry. The purpose of having bromide ions is to enhance the analytical value of cadmium detection. In the absence of bromide ions, cadmium stripping peaks coalesce with indium and it is difficult to resolve for analytical purposes. The addition of bromide ions strongly influences the peak separation, thanks to the complex-forming characteristics of cadmium with bromide ions. Several key operational parameters influencing the electroanalytical response of indium modified electrodes were examined and optimized, such as deposition potential, pH, bromide ion and indium concentration. The indium modified electrode exhibited well-defined, separated stripping signals and revealed good linear behavior in the examined concentration range from 1 to 25 ng ml(-1). The present method shows a low detection limit value of 0.36 ng ml(-1). These results suggest that the proposed electrode contributes to the wider applicability of electrochemical stripping techniques in connection with "mercury-free" electrodes.

  19. Adsorption of indium(III) ions from aqueous solution using chitosan-coated bentonite beads.

    PubMed

    Calagui, Mary Jane C; Senoro, Delia B; Kan, Chi-Chuan; Salvacion, Jonathan W L; Futalan, Cybelle Morales; Wan, Meng-Wei

    2014-07-30

    Batch adsorption study was utilized in evaluating the potential suitability of chitosan-coated bentonite (CCB) as an adsorbent in the removal of indium ions from aqueous solution. The percentage (%) removal and adsorption capacity of indium(III) were examined as a function of solution pH, initial concentration, adsorbent dosage and temperature. The experimental data were fitted with several isotherm models, where the equilibrium data was best described by Langmuir isotherm. The mean energy (E) value was found in the range of 1-8kJ/mol, indicating that the governing type of adsorption of indium(III) onto CCB is essentially physical. Thermodynamic parameters, including Gibbs free energy, enthalpy, and entropy indicated that the indium(III) ions adsorption onto CCB was feasible, spontaneous and endothermic in the temperature range of 278-318K. The kinetics was evaluated utilizing the pseudo-first order and pseudo-second order model. The adsorption kinetics of indium(III) best fits the pseudo-second order (R(2)>0.99), which implies that chemical sorption as the rate-limiting step.

  20. Imaging of cardiac allograft rejection in dogs using indium-111 monoclonal antimyosin Fab

    SciTech Connect

    Addonizio, L.J.; Michler, R.E.; Marboe, C.; Esser, P.E.; Johnson, L.L.; Seldin, D.W.; Gersony, W.M.; Alderson, P.O.; Rose, E.A.; Cannon, P.J.

    1987-03-01

    The acute rejection of cardiac allografts is currently diagnosed by the presence of myocyte necrosis on endomyocardial biopsy. We evaluated the efficacy of noninvasive scintigraphic imaging with indium-111-labeled anticardiac myosin Fab fragments (indium-111 antimyosin) to detect and quantify cardiac allograft rejection. Six dogs that had intrathoracic heterotopic cardiac allograft transplantation were injected with indium-111 antimyosin and planar and single photon emission computed tomographic (SPECT) images were obtained in various stages of acute and subacute rejection. Four dogs had an allograft older than 8 months and had been on long-term immunosuppressive therapy; two dogs had an allograft less than 2 weeks old and were not on immunosuppressive therapy. Count ratios comparing heterotopic with native hearts were calculated from both SPECT images and in vitro scans of excised and sectioned hearts and were compared with the degree of rejection scored by an independent histopathologic review. Indium-111 antimyosin uptake was not visible in planar or SPECT images of native hearts. Faint diffuse uptake was apparent in cardiac allografts during long-term immunosuppression and intense radioactivity was present in hearts with electrocardiographic evidence of rejection. The heterotopic to native heart count ratios in SPECT images correlated significantly with the count ratios in the excised hearts (r = 0.93) and with the histopathologic rejection score (r = 0.97). The distribution of indium-111 antimyosin activity in right and left ventricles corresponded to areas of histopathologic abnormalities.

  1. Adsorption of collagen to indium oxide nanoparticles and infrared emissivity study thereon

    SciTech Connect

    Zhou Yuming Shan Yun; Sun Yanqing; Ju Huangxian

    2008-08-04

    Adsorption of collagen to indium oxide nanoparticles was carried out in water-acetone solution at volumetric ratio of 1:1 with pH value varying from 3.2 to 9.3. As indicated by TGA, maximum collagen adsorption to indium oxide nanoparticles occurred at pH of 3.2. It was proposed that noncovalent interactions such as hydrogen bonding, hydrophilic and electrostatic interactions made main contributions to collagen adsorption. The IR emissivity values (8-14 {mu}m) of collagen-adsorbed indium oxide nanoparticles decreased significantly compared to either pure collagen or indium oxide nanoparticles possibly due to the interfacial interactions between collagen and indium oxide nanoparticles. And the lowest infrared emissivity value of 0.587 was obtained at collagen adsorption of 1.94 g/100 g In{sub 2}O{sub 3}. On the chance of improved compatibility with organic adhesives, the chemical activity of adsorbed collagen was further confirmed by grafting copolymerization with methyl methacrylate by formation of polymer shell outside, as evidenced by IR spectrum and transmission electron microscopy.

  2. Influences of indium doping and annealing on microstructure and optical properties of cadmium oxide thin films

    NASA Astrophysics Data System (ADS)

    Zhu, Yuankun; Lei, Pei; Zhu, Jiaqi; Han, Jiecai

    2016-04-01

    The influences of indium doping and subsequent annealing in nitrogen and air atmospheres on the microstructure and optical properties of cadmium oxide films were studied in detail with the aid of various characterizations. X-ray photoelectronic spectroscopy analysis shows that indium atom forms chemically oxidized bonds in Cd-O matrix. X-ray diffraction results demonstrate that CdO structure remains FCC structure with indium doping, whereas the preferential orientation transforms from (222) into (200) orientation. Indium doping prevents the large crystalline growth, and this role still works under both nitrogen and air annealing processes. Similarly, CdO films show rough surface under annealing conditions, but the force has been greatly weakened at high doping level. It is clear that refractive index and extinction coefficient are closely correlated with crystalline size for undoped films, whereas it turns to the doping level for doped films, which can be performed by the mechanism of indium atom substitution. This work provides a very useful guild for design and application of optical-electronic devices.

  3. Synthesis and decomposition of a novel carboxylate precursor to indium oxide

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Andras, Maria T.; Duraj, Stan A.; Clark, Eric B.; Hehemann, David G.; Scheiman, Daniel A.; Fanwick, Phillip E.

    1994-01-01

    Reaction of metallic indium with benzoyl peroxide in 4-1 methylpyridine (4-Mepy) at 25 C produces an eight-coordinate mononuclear indium(III) benzoate, In(eta(sup 2)-O2CC6H5)3(4-Mepy)2 4H2O (I), in yields of up to 60 percent. The indium(III) benzoate was fully characterized by elemental analysis, spectroscopy, and X-ray crystallography; (I) exists in the crystalline state as discrete eight-coordinate molecules; the coordination sphere around the central indium atom is best described as pseudo-square pyramidal. Thermogravimetric analysis of (I) and X-ray diffraction powder studies on the resulting pyrolysate demonstrate that this new benzoate is an inorganic precursor to indium oxide. Decomposition of (I) occurs first by loss of 4-methylpyridine ligands (100 deg-200 deg C), then loss of benzoates with formation of In2O3 at 450 C. We discuss both use of carboxylates as precursors and our approach to their preparation.

  4. Copper mediated carbometalation reactions.

    PubMed

    Müller, D S; Marek, I

    2016-08-01

    Since the first discovery of carbocupration of alkynes in the 1970s a tremendous amount of research has been carried out in this field. The exceptionally high selectivities obtained attribute to the great synthetic value of carbocupration reactions. This tutorial review will present the most important features of carbocupration of alkynes and highlight the most relevant reviews. Then a comprehensive review of copper mediated carbometalation of cyclopropenes will follow. The latter method has received much attention over the last decade as it allows the highly selective construction of poly-substituted cyclopropanes which can be transformed into acyclic derivatives bearing one or multiple tertiary or quaternary carbon stereocenters. PMID:26808300

  5. Copper mediated carbometalation reactions.

    PubMed

    Müller, D S; Marek, I

    2016-08-01

    Since the first discovery of carbocupration of alkynes in the 1970s a tremendous amount of research has been carried out in this field. The exceptionally high selectivities obtained attribute to the great synthetic value of carbocupration reactions. This tutorial review will present the most important features of carbocupration of alkynes and highlight the most relevant reviews. Then a comprehensive review of copper mediated carbometalation of cyclopropenes will follow. The latter method has received much attention over the last decade as it allows the highly selective construction of poly-substituted cyclopropanes which can be transformed into acyclic derivatives bearing one or multiple tertiary or quaternary carbon stereocenters.

  6. Influence of the Nanoscale Kirkendall Effect on the Morphology of Copper Indium Disulfide Nanoplatelets Synthesized by Ion Exchange.

    PubMed

    Mu, Linjia; Wang, Fudong; Sadtler, Bryce; Loomis, Richard A; Buhro, William E

    2015-07-28

    CuInS2 nanocrystals are prepared by ion exchange with template Cu2-xS nanoplatelets and InX3 [X = chloride, iodide, acetate (OAc), or acetylacetonate (acac)]. The morphologies of the resultant nanocrystals depend on the InX3 precursor and the reaction temperature. Exchange with InCl3 at 150 °C produces CuInS2 nanoplatelets having central holes and thickness variations, whereas the exchange at 200 °C produces intact CuInS2 nanoplatelets in which the initial morphology is preserved. Exchange with InI3 at 150 °C produces CuInS2 nanoplatelets in which the central hollowing is more extreme, whereas exchange with In(OAc)3 or In(acac)3 at 150 °C produces intact CuInS2 nanoplatelets. The results establish that the ion exchange occurs through the thin nanoplatelet edge facets. The hollowing and hole formation are due to a nanoscale Kirkendall Effect operating in the reaction-limited regime for displacement of X(-) at the edges, to allow insertion of In(3+) into the template nanoplatelets. PMID:26165847

  7. Copper indium disulfide nanocrystals supported on carbonized chicken eggshell membranes as efficient counter electrodes for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Wang, Lidan; He, Jianxin; Zhou, Mengjuan; Zhao, Shuyuan; Wang, Qian; Ding, Bin

    2016-05-01

    A domestic waste, chicken eggshell membrane (ESM), is used as a raw material to fabricate carbonized ESM loaded with chalcopyrite CuInS2 nanocrystals (denoted CESM-CuInS2) by a simple liquid impregnation and carbonization method. The CESM-CuInS2 composite possesses a natural three-dimensional macroporous network structure in which numerous CuInS2 nanocrystals with a size of about 25 nm are inlaid in carbon submicron fibers that form a microporous network. The CESM-CuInS2 composite is used as the counter electrode in a dye-sensitized solar cell (DSSC) and its photoelectric performance is tested. The DSSC with a CESM-CuInS2 counter electrode exhibits a short-circuit current density of 12.48 mA cm-2, open-circuit voltage of 0.78 V and power conversion efficiency of 5.8%; better than the corresponding values for a DSSC with a CESM counter electrode, and comparable to that of a reference DSSC with a platinum counter electrode. The favorable photoelectric performance of the CESM-CuInS2 counter electrode is attributed to its hierarchical structure, which provides a large specific surface area and numerous catalytically active sites to facilitate the oxidation of the electrolyte. This new composite material has many advantages, such as low cost and simple preparation, compared with Pt and pure CuInS2 counter electrodes.

  8. Metalorganic chemical vapor deposition of CuInSe{sub 2} from copper and indium diselenocarbamates for solar cell devices

    SciTech Connect

    McAleese, J.; O`Brien, P.; Otway, D.J.

    1998-12-31

    Thin film(s) of chalcopyrite CuInSe{sub 2} have been grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) using the precursors In(Se{sub 2}CNMe{sup n}Hexyl){sub 3} and precursors Cu(Se{sub 2}CNMe{sup n}Hexyl){sub 2}. The precursors were prepared from carbon diselenide. Films were grown on glass between 400--450 C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

  9. The effects of post-processing on the surface and the optical properties of copper indium sulfide quantum dots.

    PubMed

    Akdas, Tugce; Distaso, Monica; Kuhri, Susanne; Winter, Benjamin; Birajdar, Balaji; Spiecker, Erdmann; Guldi, Dirk M; Peukert, Wolfgang

    2015-05-01

    In the current contribution we report on investigations regarding the surface of CuInS2 quantum dots and on different strategies to control the amount of surface ligands in a post-processing step. In particular, the reactivity of the organic components, that is, 1-dodecanthiol and 1-octadecene as ligand and solvent, respectively, during nanocrystal formation was studied. A new method to remove residuals from the reaction mixture and to detach excess organics from the surface of the nanocrystals is reported. Our new method, which is based on the utilization of acids, is compared with standard purification procedures by means of thermogravimetric analysis (TGA) with particular focus on its efficiency to remove organics. As a complement, the surface chemistry is analyzed by nuclear magnetic resonance spectroscopy (NMR) to shed light on the nature of the organic components still present after purification. Further analysis of the product by inductively coupled plasma optical emission spectroscopy (ICP-OES) is performed to verify the influence of the new purification method on surface composition and properties. Moreover, steady state and time resolved spectroscopies give insights into excitonic behavior as well as recombination processes. Finally, the new method is optimized for the purification of CuInS2-ZnS nanocrystals, which show enhanced optical properties. PMID:25643961

  10. High conductivity composite flip-chip joints and silver-indium bonding to bismuth telluride for high temperature applications

    NASA Astrophysics Data System (ADS)

    Lin, Wen P.

    Two projects are reported. First, the barrier layer and silver (Ag)-indium (In) transient liquid phase (TLP) bonding for thermoelectric (TE) modules at high temperature were studied, and followed with a survey of Ag microstructure and grain growth kinetics. Second, the high electrical conductivity joint materials bonded by both Ag-AgIn TLP and solid-state bonding processes for small size flip-chip applications were designed. In the first project, barrier and Ag-In TLP bonding layer for TE module at high temperature application were studied. Bismuth telluride (Bi2 Te3) and its alloys are used as materials for a TE module. A barrier/bonding composite was developed to satisfy the TE module for high temperature operation. Titanium (Ti)/ gold (Au) was chosen as the barrier layers and an Ag-rich Ag-In joint was chosen as the bonding layer. An electron-beam evaporated Ti layer was selected as the barrier layer. An Ag-In fluxless TLP bonding process was developed to bond the Bi 2Te3 chips to the alumina substrates for high temperature applications. To prepare for bonding, the Bi2Te3 chips were coated with a Ti/Au barrier layer followed by a Ag layer. The alumina substrates with titanium-tungsten (TiW)/Au were then electroplated with the Ag/In/Ag structure. These Bi2Te3 chips were bonded to alumina substrates at a bonding temperature of 180ºC with a static pressure as low as 100psi. The resulting void-free joint consists of five regions: Ag, (Ag), Ag2In, (Ag), and Ag, where (Ag) is Ag-rich solid solution with In atoms in it and Ag is pure Ag. This joint has a melting temperature higher than 660ºC, and it manages the coefficient of thermal expansion (CTE) mismatch between the Bi2Te3 and alumina substrate. The whole Ti/Au barrier layer and Ag-In bonding composite between Bi 2Te3 and alumina survived after an aging test at 250°C for 200 hours. The Ag-In joint transformed from Ag/(Ag)/Ag2In/(Ag)/Ag to a more reliable (Ag) rich layer after the aging test. Ag thin films were

  11. Lead and Copper Control 101

    EPA Science Inventory

    This presentation is an overview of the most important water treatment strategies for the control of lead and copper release from drinking water corrosion. In addition to the sections specifically on lead and copper treatment, sections are included that cover sampling to find le...

  12. Industrial garnet

    USGS Publications Warehouse

    Olson, D.W.

    2001-01-01

    A general overview of the industrial garnet industry is provided. About 20 percent of global industrial garnet production takes place in the U.S. During 2000, an estimated 300 kt of industrial garnets were produced worldwide. The U.S. is the world's largest consumer of industrial garnet, consuming 56.9 kt in 2000.

  13. Bacterial consortium for copper extraction from sulphide ore consisting mainly of chalcopyrite

    PubMed Central

    Romo, E.; Weinacker, D.F.; Zepeda, A.B.; Figueroa, C.A.; Chavez-Crooker, P.; Farias, J.G.

    2013-01-01

    The mining industry is looking forward for bacterial consortia for economic extraction of copper from low-grade ores. The main objective was to determine an optimal bacterial consortium from several bacterial strains to obtain copper from the leach of chalcopyrite. The major native bacterial species involved in the bioleaching of sulphide ore (Acidithiobacillus ferrooxidans, Acidithiobacillus thiooxidans, Leptospirillum ferrooxidans and Leptospirillum ferriphilum) were isolated and the assays were performed with individual bacteria and in combination with At. thiooxidans. In conclusion, it was found that the consortium integrated by At. ferrooxidans and At. thiooxidans removed 70% of copper in 35 days from the selected ore, showing significant differences with the other consortia, which removed only 35% of copper in 35 days. To validate the assays was done an escalation in columns, where the bacterial consortium achieved a higher percentage of copper extraction regarding to control. PMID:24294251

  14. Detection of copper ions from aqueous solutions using layered double hydroxides thin films deposited by PLD

    NASA Astrophysics Data System (ADS)

    Vlad, A.; Birjega, R.; Matei, A.; Luculescu, C.; Nedelcea, A.; Dinescu, M.; Zavoianu, R.; Pavel, O. D.

    2015-10-01

    Layered double hydroxides (LDHs) thin films with Mg-Al were deposited using pulsed laser deposition (PLD) technique. We studied the ability of our films to detect copper ions in aqueous solutions. Copper is known to be a common pollutant in water, originating from urban and industrial waste. Clay minerals, including layered double hydroxides (LDHs), can reduce the toxicity of such wastes by adsorbing copper. We report on the uptake of copper ions from aqueous solution on LDH thin films obtained via PLD. The obtained thin films were characterized using X-ray Diffraction, Atomic Force Microscopy, and Scanning Electron Microscopy with Energy Dispersive X-ray analysis. The results in this study indicate that LDHs thin films obtained by PLD have potential as an efficient adsorbent for removing copper from aqueous solution.

  15. Control of copper smelter fugitive emissions. Final report Mar 76-Oct 79

    SciTech Connect

    Devitt, T.W.

    1980-05-01

    This report deals with fugitive emissions from copper smelting and with related emission control measures. The study involved evaluation of the controls now used in the copper smelting industry and development of suggestions for alternative control devices and practices. A brief overview of copper smelting processes is followed by a more detailed analysis of the conventional processes identifying portions of the operating cycle that produce fugitive emissions. Emphasis is placed on Pierce-Smith Converting which is one of the major emission sources in copper smelting. Some alternate processes now in limited use in the U.S. are described including estimations of fugitive emissions from these conventional and alternative copper smelting processes. A specific report on the utilization of the Hoboken Converter is being prepared at the time of this report. The USEPA should be contacted if a copy of this report is desired.

  16. Statistical Evaluation and Optimization of Factors Affecting the Leaching Performance of Copper Flotation Waste

    PubMed Central

    Çoruh, Semra; Elevli, Sermin; Geyikçi, Feza

    2012-01-01

    Copper flotation waste is an industrial by-product material produced from the process of manufacturing copper. The main concern with respect to landfilling of copper flotation waste is the release of elements (e.g., salts and heavy metals) when in contact with water, that is, leaching. Copper flotation waste generally contains a significant amount of Cu together with trace elements of other toxic metals, such as Zn, Co, and Pb. The release of heavy metals into the environment has resulted in a number of environmental problems. The aim of this study is to investigate the leaching characteristics of copper flotation waste by use of the Box-Behnken experimental design approach. In order to obtain the optimized condition of leachability, a second-order model was examined. The best leaching conditions achieved were as follows: pH = 9, stirring time = 5 min, and temperature = 41.5°C. PMID:22629194

  17. High rate copper and energy recovery in microbial fuel cells

    PubMed Central

    Rodenas Motos, Pau; ter Heijne, Annemiek; van der Weijden, Renata; Saakes, Michel; Buisman, Cees J. N.; Sleutels, Tom H. J. A.

    2015-01-01

    Bioelectrochemical systems (BESs) are a novel, promising technology for the recovery of metals. The prerequisite for upscaling from laboratory to industrial size is that high current and high power densities can be produced. In this study we report the recovery of copper from a copper sulfate stream (2 g L-1 Cu2+) using a laboratory scale BES at high rate. To achieve this, we used a novel cell configuration to reduce the internal voltage losses of the system. At the anode, electroactive microorganisms produce electrons at the surface of an electrode, which generates a stable cell voltage of 485 mV when combined with a cathode where copper is reduced. In this system, a maximum current density of 23 A m-2 in combination with a power density of 5.5 W m-2 was produced. XRD analysis confirmed 99% purity in copper of copper deposited onto cathode surface. Analysis of voltage losses showed that at the highest current, most voltage losses occurred at the cathode, and membrane, while anode losses had the lowest contribution to the total voltage loss. These results encourage further development of BESs for bioelectrochemical metal recovery. PMID:26150802

  18. Kinetic modeling of copper biosorption by immobilized biomass

    SciTech Connect

    Veglio, F.; Beolchini, F.; Toro, L.

    1998-03-01

    Biosorption of heavy metals is one of the most promising technologies involved in the removal of toxic metals from industrial waste streams and natural waters. The kinetic modeling of copper biosorption by Arthrobacter sp. immobilized in a hydroxyethyl methacrylate-based matrix is reported in this work. The resin-biomass complex (RBC) has been used for copper biosorption in different conditions according to a factorial experiment. Factors investigated were cross-linker (trimethylolpropane trimethacrylate) concentration, biomass concentration in the solid, and particles` granulometry. A maximum copper specific uptake of abut 7 mg of Cu/g of biomass (dry weight) has been observed, in the case of a RBC with the following characteristics: 2% (w/w) cross-linker concentration, 8% (w/w) biomass concentration, and 425--750 {micro}m granulometry. The shrinking core model has been used for the fitting of experimental data. A good fit has been found in the case of controlling intraparticle diffusion in all experimental trials. The copper diffusion coefficient in RBC has been estimated from the slope of the regression lines. Values obtained for the diffusion coefficients do not differ from one another with respect to the estimated standard error. An average apparent copper diffusion coefficient of about 3 {times} 10{sup {minus}6} cm{sup 2}/s has been found.

  19. Adsorption of copper cyanide on chemically active adsorbents

    SciTech Connect

    Lee, J.S.; Deorkar, N.V.; Tavlarides, L.L.

    1998-07-01

    An inorganic chemically active adsorbent (ICAA), SG(1)-TEPA (tetraethylenepentaamine)-propyl, is developed for removal, recovery, and recycling of copper cyanide from industrial waste streams. Equilibrium studies are executed to determine and model adsorption of the copper cyanide complex from aqueous solutions in a batch and packed column. It appears that adsorption is dependent on anionic copper cyanide species and the basicity of the ligand. Aqueous-phase equilibrium modeling shows that monovalent (Cu(CN){sub 2}{sup {minus}}), divalent (Cu(CN){sub 3}{sup 2{minus}}), and trivalent (Cu(CN){sub 4}{sup 3{minus}}) species of copper cyanide exist in the solution, depending on the pH and the concentration of total cyanide ions. Batch adsorption data are modeled using a modified multicomponent Langmuir isotherm which includes aqueous-phase speciation and basicity of the SG(1)-TEPA-propyl. This developed model is applied with a mass balance equation to describe the adsorption of copper cyanide complexes in a packed column.

  20. Spectral analysis of the fifth spectrum of indium: In V

    NASA Astrophysics Data System (ADS)

    Swapnil; Tauheed, A.

    2016-01-01

    The fifth spectrum of indium (In V) has been investigated in the grazing and normal incidence wavelength regions. In4+ is a Rh-like ion with the ground configuration 4p64d9 and first excited configurations of the type 4p64d8nℓ (n≥4). The theoretical predications for this ion were made by Cowan's quasi-relativistic Hartree-Fock code with superposition of configurations involving 4p64d8(5p+6p+7p+4f+5f+6f), 4p54d10, 4p64d75s(5p+4f) for the odd parity matrix and 4p64d8 (5s+6s+7s+5d+6d), 4p64d7(5s2+5p2) for the even parity system. The spectra used for this work were recorded on 10.7 m grazing and normal incidence spectrographs at the National Institute of Standards and Technology, Gaithersburg, Maryland (USA) and also on a 3-m normal incidence vacuum spectrograph at Antigonish (Canada). The sources used were a sliding spark and a triggered spark respectively. Two hundred and thirty two energy levels based on the identification of 873 spectral lines have been established, forty six being new. Least squares fitted parametric calculations were used to interpret the observed level structure. The energy levels were optimized using a level optimization computer program (LOPT). Our wavelength accuracy for sharp and unblended lines is estimated to be within ±0.005 Å for λ below 400 Å and ±0.006 Å up to 1200 Å.