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Sample records for ingaas qds structures

  1. Preparation and Effect of Lighting on Structures and Properties of GSH Capped ZnSe QDs.

    PubMed

    Ding, Ling; Peng, Zeze; Zhou, Peijiang; Cheng, Gary J; Nian, Qiong; Lin, Dong; Zhou, Jinhui; Liang, Yuhe

    2015-11-01

    L-glutathione (GSH) capped ZnSe quantum dots (QDs) were prepared by microwave-assisted aqueous synthesis. Then, the resulting QDs were illuminated under dark, ultraviolet light and incandescent light, respectively. Thereby effect of lighting on the structures and properties of QDs were studied systematically. It was revealed that particle size and element content of QDs took a sharp change after irradiation, while the crystal structure maintains nearly unaffected. Comparing to the ZnSe QDs under dark condition, counterparts irradiated by UV light possessed outstanding sphericity, size distribution and dispersion. And the content of sulfur (S) in ZnSe QDs irradiated by UV light was much higher relatively. The effect of lighting on vibration peaks of O-H was considerable. However, this effect was observed to be weak on other chemical bonds. The possible explanation ascribes to photo-chemical interactions can occur between S-H and O-H bonds on the surface of GSH ligand. The lighting induced GSH to occur photocatalytic oxidation on the surface of ZnSe QDs, which improved the optical properties of QDs. The effects of lighting rely on irradiation types, the sequence is UV light, incandescent light and dark from high to low.

  2. Structural, optical and photovoltaic properties of co-doped CdTe QDs for quantum dots sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Ayyaswamy, Arivarasan; Ganapathy, Sasikala; Alsalme, Ali; Alghamdi, Abdulaziz; Ramasamy, Jayavel

    2015-12-01

    Zinc and sulfur alloyed CdTe quantum dots (QDs) sensitized TiO2 photoelectrodes have been fabricated for quantum dots sensitized solar cells. Alloyed CdTe QDs were prepared in aqueous phase using mercaptosuccinic acid (MSA) as a capping agent. The influence of co-doping on the structural property of CdTe QDs was studied by XRD analysis. The enhanced optical absorption of alloyed CdTe QDs was studied using UV-vis absorption and fluorescence emission spectra. The capping of MSA molecules over CdTe QDs was confirmed by the FTIR and XPS analyses. Thermogravimetric analysis confirms that the prepared QDs were thermally stable up to 600 °C. The photovoltaic performance of alloyed CdTe QDs sensitized TiO2 photoelectrodes were studied using J-V characteristics under the illumination of light with 1 Sun intensity. These results show the highest photo conversion efficiency of η = 1.21%-5% Zn & S alloyed CdTe QDs.

  3. Structural, morphological and optical properties of PEDOT:PSS/QDs nano-composite films prepared by spin-casting

    NASA Astrophysics Data System (ADS)

    Najeeb, Mansoor Ani; Abdullah, Shahino Mah; Aziz, Fakhra; Ahmad, Zubair; Rafique, Saqib; Wageh, S.; Al-Ghamdi, Ahmed A.; Sulaiman, Khaulah; Touati, Farid; Shakoor, R. A.; Al-Thani, N. J.

    2016-09-01

    This paper describes the structural, morphological and optical properties of the nano-composite of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and quantum dots (QDs). The ZnSe and CdSe QDs have been synthesized, with the aid of Mercaptoacetic acid (MAA), by a colloidal method with an average size of ~5 to 7 nm. QDs have been embedded in PEDOT:PSS using a simple solution processing approach and has been deposited as thin films by spin coating technique. The QDs embedded PEDOT:PSS enhances the light absorption spectra of samples, prominently in terms of absorption intensity which may consequently improve sensitivity of the optoelectronic devices.

  4. Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs

    SciTech Connect

    Sobolev, M. M. Gadzhiyev, I. M.; Bakshaev, I. O.; Nevedomskiy, V. N.; Buyalo, M. S.; Zadiranov, Yu. M.; Zolotareva, R. V.; Portnoi, E. L.

    2012-01-15

    The results of experimental studies concerning the optical polarization anisotropy of electroluminescence and absorption spectra of systems with a varied number of tunnel-coupled vertically correlated In(Ga)As/GaAs quantum dots (QDs), built into a double-section laser with equal-length sections, are presented. One such system is a QD superlattice exhibiting the Wannier-Stark effect. The involvement of heavyhole ground states in optical transitions for light polarized both in the plane perpendicular to the growth axis (X-Y) and along the growth direction Z of the structure was observed. The degree of polarization anisotropy depends on the height of vertically correlated QDs and the QD superlattice: the total thickness of all In(Ga)As QD layers and GaAs spacers between the QDs, which is related to the Z component of the wave function of heavy-hole ground states for vertically correlated QDs and for the QD superlattice.

  5. Radiation performance of AlGaAs and InGaAs concentrator cells and expected performance of cascade structures

    NASA Technical Reports Server (NTRS)

    Curtis, H. B.; Swartz, C. K.; Hart, R. E., Jr.

    1987-01-01

    Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1-MeV electrons and 37-MeV protons. These cells are candidates for individual cells in a cascade structure. Data are presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AM0. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series-connected and separately connected structures are investigated.

  6. Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques

    NASA Astrophysics Data System (ADS)

    David, S.; Roque, J.; Rochat, N.; Bernier, N.; Piot, L.; Alcotte, R.; Cerba, T.; Martin, M.; Moeyaert, J.; Bogumilowizc, Y.; Arnaud, S.; Bertin, F.; Bassani, F.; Baron, T.

    2016-05-01

    Structural and optical properties of InGaAs quantum well fins (QWFs) selectively grown on Si using the aspect ratio trapping (ART) method in 200 nm deep SiO2 trenches are studied. A new method combining cathodoluminescence, transmission electron microscopy, and precession electron diffraction techniques is developed to spatially correlate the presence of defects and/or strain with the light emission properties of a single InGaAs QWF. Luminescence losses and energy shifts observed at the nanoscale along InGaAs QWF are correlated with structural defects. We show that strain distortions measured around threading dislocations delimit both high and low luminescent areas. We also show that trapped dislocations on SiO2 sidewalls can also result in additional distortions. Both behaviors affect optical properties of QWF at the nanoscale. Our study highlights the need to improve the ART growth method to allow integration of new efficient III-V optoelectronic components on Si.

  7. Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Treu, J.; Speckbacher, M.; Saller, K.; Morkötter, S.; Döblinger, M.; Xu, X.; Riedl, H.; Abstreiter, G.; Finley, J. J.; Koblmüller, G.

    2016-02-01

    We delineate the optimized growth parameter space for high-uniformity catalyst-free InGaAs nanowire (NW) arrays on Si over nearly the entire alloy compositional range using selective area molecular beam epitaxy. Under the required high group-V fluxes and V/III ratios, the respective growth windows shift to higher growth temperatures as the Ga-content x(Ga) is tuned from In-rich to Ga-rich InGaAs NWs. Using correlated x-ray diffraction, transmission electron microscopy, and micro-photoluminescence spectroscopy, we identify structural defects to govern luminescence linewidths in In-rich (x(Ga) < 0.4) and Ga-rich (x(Ga) > 0.6) NWs, whereas limitations at intermediate Ga-content (0.4 < x(Ga) < 0.6) are mainly due to compositional inhomogeneities. Most remarkably, the catalyst-free InGaAs NWs exhibit a characteristic transition in crystal structure from wurtzite to zincblende (ZB) dominated phase near x(Ga) ˜ 0.4 that is further reflected in a cross-over from blue-shifted to red-shifted photoluminescence emission relative to the band edge emission of the bulk ZB InGaAs phase.

  8. Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure.

    PubMed

    Wang, Peng; Chen, Qimiao; Wu, Xiaoyan; Cao, Chunfang; Wang, Shumin; Gong, Qian

    2016-12-01

    InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the strain-reducing layer (SRL) above the dot layer were found to be responsible for the redshift in photoluminescence (PL) emission of the InAs/InGaAs DWELL structure. A linear followed by a saturation behavior of the emission redshift was observed as a function of the SBL and SRL thickness, respectively. The PL intensity is greatly enhanced by applying both of the SRL and SBL. Finite element analysis simulation and transmission electron microscopy (TEM) measurement were carried out to analyze the strain distribution in the InAs QD and the InGaAs SBL. The results clearly indicate the strain reduction in the QD induced by the SBL, which are likely the main cause for the emission redshift. PMID:26932758

  9. Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure.

    PubMed

    Wang, Peng; Chen, Qimiao; Wu, Xiaoyan; Cao, Chunfang; Wang, Shumin; Gong, Qian

    2016-12-01

    InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the strain-reducing layer (SRL) above the dot layer were found to be responsible for the redshift in photoluminescence (PL) emission of the InAs/InGaAs DWELL structure. A linear followed by a saturation behavior of the emission redshift was observed as a function of the SBL and SRL thickness, respectively. The PL intensity is greatly enhanced by applying both of the SRL and SBL. Finite element analysis simulation and transmission electron microscopy (TEM) measurement were carried out to analyze the strain distribution in the InAs QD and the InGaAs SBL. The results clearly indicate the strain reduction in the QD induced by the SBL, which are likely the main cause for the emission redshift.

  10. Evaluation of the performance correlated defects of metamorphic InGaAs photodetector structures through plane-view EBIC

    NASA Astrophysics Data System (ADS)

    Zhang, Yong-gang; Liu, Ke-hui; Gu, Yi; Zhou, Li; Li, Hsby; Chen, Xing-you; Cao, Yuan-ying; Xi, Su-ping

    2014-03-01

    To evaluate the performance correlated imperfection or defect features of metamorphic InGaAs photodetector structures, a scanning electron microscopy scheme including both plane-view electron beam induced current (EBIC) and secondary electron (SE) images have been used. The abilities, merits and limitations as well as some case-dependent properties of EBIC have been discussed in detail. The devices of similar structures grown on InP or GaAs substrates with quite different lattice mismatch show discriminated defect distribution patterns, prompting their distinct origins, which have been confirmed by cross-sectional transmission electron microscopy observation. Using self-developed image processing software the EBIC features of the samples are statistically analyzed, which validated the qualitative correlation between the EBIC data and device dark current. Fusing of EBIC and SE images has also been attempted to enhance the defect visibility. Results indicate that EBIC is feasible to investigate the effects of defects on the device performance not only in research work, but also for product quality monitor purposes.

  11. Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

    PubMed

    Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

    2016-03-01

    Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links.

  12. Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

    PubMed

    Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

    2016-03-01

    Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links. PMID:26901448

  13. In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures

    NASA Astrophysics Data System (ADS)

    Pi, T. W.; Lin, Y. H.; Fanchiang, Y. T.; Chiang, T. H.; Wei, C. H.; Lin, Y. C.; Wertheim, G. K.; Kwo, J.; Hong, M.

    2015-04-01

    The electronic structure of single-crystal (In)GaAs deposited with tri-methylaluminum (TMA) and water via atomic layer deposition (ALD) is presented with high-resolution synchrotron radiation core-level photoemission and capacitance-voltage (CV) characteristics. The interaction of the precursor atoms with (In)GaAs is confined at the topmost surface layer. The Ga-vacant site on the GaAs(111)A-2 × 2 surface is filled with Al, thereby effectively passivating the As dangling bonds. The As-As dimers on the GaAs(001)-2 × 4 surface are entirely passivated by one cycle of TMA and water. The presumed layerwise deposition fails to happen in GaAs(001)-4 × 6. In In0.20Ga0.80As(001)-2 × 4, the edge row As atoms are partially bonded with the Al, and one released methyl then bonds with the In. It is suggested that the unpassivated surface and subsurface atoms cause large frequency dispersions in CV characteristics under the gate bias. We also found that the (In)GaAs surface is immune to water in ALD. However, the momentary exposure of it to air (less than one minute) introduces significant signals of native oxides. This indicates the necessity of in situ works of high κ/(In)GaAs-related experiments in order to know the precise interfacial atomic bonding and thus know the electronic characteristics. The electric CV measurements of the ALD-Al2O3 on these (In)GaAs surfaces are correlated with their electronic properties.

  14. In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures.

    PubMed

    Pi, T W; Lin, Y H; Fanchiang, Y T; Chiang, T H; Wei, C H; Lin, Y C; Wertheim, G K; Kwo, J; Hong, M

    2015-04-24

    The electronic structure of single-crystal (In)GaAs deposited with tri-methylaluminum (TMA) and water via atomic layer deposition (ALD) is presented with high-resolution synchrotron radiation core-level photoemission and capacitance-voltage (CV) characteristics. The interaction of the precursor atoms with (In)GaAs is confined at the topmost surface layer. The Ga-vacant site on the GaAs(111)A-2 × 2 surface is filled with Al, thereby effectively passivating the As dangling bonds. The As-As dimers on the GaAs(001)-2 × 4 surface are entirely passivated by one cycle of TMA and water. The presumed layerwise deposition fails to happen in GaAs(001)-4 × 6. In In0.20Ga0.80As(001)-2 × 4, the edge row As atoms are partially bonded with the Al, and one released methyl then bonds with the In. It is suggested that the unpassivated surface and subsurface atoms cause large frequency dispersions in CV characteristics under the gate bias. We also found that the (In)GaAs surface is immune to water in ALD. However, the momentary exposure of it to air (less than one minute) introduces significant signals of native oxides. This indicates the necessity of in situ works of high κ/(In)GaAs-related experiments in order to know the precise interfacial atomic bonding and thus know the electronic characteristics. The electric CV measurements of the ALD-Al2O3 on these (In)GaAs surfaces are correlated with their electronic properties.

  15. Narrow optical line width from site-controlled InGaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Yang, Lily; Yakes, Michael; Sweeney, Timothy; Carter, Samuel; Kim, Chulsoo; Kim, Mijin; Bracker, Allan; Gammon, Daniel

    2013-03-01

    The incorporation of self-assembled quantum dots (QDs) in systematically scalable quantum devices requires a method of nucleating dots with nanometer-scale spatial accuracy while preserving their narrow optical line width. We have developed a technique combining e-beam lithography, wet etching, and molecular beam epitaxial (MBE) growth to deterministically position InGaAs QDs with spectrometer limited photoluminescence line widths. Our technique takes advantage of the anisotropy in GaAs growth to evolve an etched pattern of holes and lines into faceted structures in which dots nucleate. Using this technique, we were able to grow a buffer layer of pure GaAs up to 90 nm in thickness between the processed surface and the dot nucleation surface, effectively separating the QDs from unavoidable residual defects and impurities on the patterned surface that broaden their optical line widths. Additionally, we demonstrate control over the number of dots nucleating per site, from single to a chain of several, by varying the dimensions of the original pattern. Our dots are grown in a Schottky diode structure. Their PL spectrum shows discrete charging transitions, with narrow linewidths near the spectrometer's resolution limit of 20 micro eV.

  16. Polarization fine structure and enhanced single-photon emission of self-assembled lateral InGaAs quantum dot molecules embedded in a planar microcavity

    NASA Astrophysics Data System (ADS)

    Hermannstädter, C.; Witzany, M.; Beirne, G. J.; Schulz, W.-M.; Eichfelder, M.; Rossbach, R.; Jetter, M.; Michler, P.; Wang, L.; Rastelli, A.; Schmidt, O. G.

    2009-06-01

    Single lateral InGaAs quantum dot molecules have been embedded in a planar microcavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could be produced that exhibit a 30 times enhanced single-photon emission rate. We also show that the single-photon emission is fully switchable between two different molecular excitonic recombination energies by applying a lateral electric field. Furthermore, the presence of a polarization fine structure splitting of the molecular neutral excitonic states is reported which leads to two polarization split classically correlated biexciton-exciton cascades. The fine structure splitting is found to be on the order of 10 μeV.

  17. Research and experiment of InGaAs shortwave infrared imaging system based on FPGA

    NASA Astrophysics Data System (ADS)

    Ren, Ling; Min, Chaobo; Sun, Jianning; Gu, Yan; Yang, Feng; Zhu, Bo; Pan, Jingsheng; Guo, Yiliang

    2015-04-01

    The design and imaging characteristic experiment of InGaAs shortwave infrared imaging system are introduced. Through the adoption of InGaAs focal plane array, the real time image process structure of InGaAs shortwave infrared imaging system is researched. The hardware circuit and image process software of the imaging system based on FPGA are researched. The InGaAs shortwave infrared imaging system is composed of shortwave infrared lens, InGaAs focal plane array, temperature controller module, power supply module, analog-to-digital converter module, digital-to-analog converter module, FPGA image processing module and optical-mechanical structure. The main lock frequency of InGaAs shortwave infrared imaging system is 30MHz. The output mode of the InGaAs shortwave infrared imaging system is PAL analog signal. The power dissipation of the imaging system is 2.6W. The real time signal process in InGaAs shortwave infrared imaging system includes non-uniformly correction algorithm, bad pixel replacement algorithm, and histogram equalization algorithm. Based on the InGaAs shortwave infrared imaging system, the imaging characteristic test of shortwave infrared is carried out for different targets in different conditions. In the foggy weather, the haze and fog penetration are tested. The InGaAs shortwave infrared imaging system could be used for observing humans, boats, architecture, and mountains in the haze and foggy weather. The configuration and performance of InGaAs shortwave infrared imaging system are respectively logical and steady. The research on the InGaAs shortwave infrared imaging system is worthwhile for improving the development of night vision technology.

  18. Photoexcited-induced sensitivity of InGaAs surface QDs to environment.

    PubMed

    Milla, M J; Ulloa, J M; Guzmán, A

    2014-11-01

    A detailed analysis of the impact of illumination on the electrical response of In0.5Ga0.5As surface nanostructures is carried out as a function of different relative humidity conditions. The importance of the surface-to-volume ratio for sensing applications is once more highlighted. From dark-to-photo conditions, the sheet resistance (SR) of a three-dimensional In0.5Ga0.5As nanostructure decays two orders of magnitude compared with that of a two-dimensional nanostructure. The electrical response is found to be vulnerable to the energy of the incident light and the external conditions. Illuminating with high energy light translates into an SR reduction of one order of magnitude under humid atmospheres, whereas it remains nearly unchanged under dry environments. Conversely, lighting with energy below the bulk energy bandgap, shows a negligible effect on the electrical properties regardless the local moisture. Both illumination and humidity are therefore needed for sensing. Photoexcited carriers can only contribute to conductivity if surface states are inactive due to water physisorption. The strong dependence of the electrical response on the environment makes these nanostructures very suitable for the development of highly sensitive and efficient sensing devices. PMID:25325146

  19. Carrier relaxation in (In,Ga)As quantum dots with magnetic field-induced anharmonic level structure

    NASA Astrophysics Data System (ADS)

    Kurtze, H.; Bayer, M.

    2016-07-01

    Sophisticated models have been worked out to explain the fast relaxation of carriers into quantum dot ground states after non-resonant excitation, overcoming the originally proposed phonon bottleneck. We apply a magnetic field along the quantum dot heterostructure growth direction to transform the confined level structure, which can be approximated by a Fock-Darwin spectrum, from a nearly equidistant level spacing at zero field to strong anharmonicity in finite fields. This changeover leaves the ground state carrier population rise time unchanged suggesting that fast relaxation is maintained upon considerable changes of the level spacing. This corroborates recent models explaining the relaxation by polaron formation in combination with quantum kinetic effects.

  20. Electrostatic assembles and optical properties of Au CdTe QDs and Ag/Au CdTe QDs

    NASA Astrophysics Data System (ADS)

    Yang, Dongzhi; Wang, Wenxing; Chen, Qifan; Huang, Yuping; Xu, Shukun

    2008-09-01

    Au-CdTe and Ag/Au-CdTe assembles were firstly investigated through the static interaction between positively charged cysteamine-stabilized CdTe quantum dots (QDs) and negatively charged Au or core/shell Ag/Au nano-particles (NCs). The CdTe QDs synthesized in aqueous solution were capped with cysteamine which endowed them positive charges on the surface. Both Au and Ag/Au NCs were prepared through reducing precursors with gallic acid obtained from the hydrolysis of natural plant poly-phenols and favored negative charges on the surface of NCs. The fluorescence spectra of CdTe QDs exhibited strong quenching with the increase of added Au or Ag/Au NCs. Railey resonance scattering spectra of Au or Ag/Au NCs increased firstly and decreased latter with the concentration of CdTe QDs, accompanied with the solution color changing from red to purple and colorless at last. Experimental results on the effects of gallic acid, chloroauric acid tetrahydrate and other reagents demonstrated the static interaction occurred between QDs and NCs. This finding reveals the possibilities to design and control optical process and electromagnetic coupling in hybrid structures.

  1. Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 to the -2nd to 10 to the 8 Hz

    NASA Technical Reports Server (NTRS)

    Liu, Shih-Ming J.; Das, Mukunda B.; Peng, Chin-Kun; Klem, John; Henderson, Timothy S.

    1986-01-01

    Equivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.

  2. Long-wavelength emission InAs quantum dots grown on InGaAs metamorphic buffers.

    PubMed

    Wu, B P; Wu, D H; Xiong, Y H; Huang, S S; Ni, H Q; Xu, Y Q; Niu, Z C

    2009-02-01

    In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 microm as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

  3. InGaAs quantum dot molecules around self-assembled GaAs nanomound templates

    SciTech Connect

    Lee, J. H.; Wang, Zh. M.; Strom, N. W.; Mazur, Yu. I.; Salamo, G. J.

    2006-11-13

    Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six (bi-QDMs to hexa-QDMs). The Ga contribution from the mounds is analyzed in determining the morphologies of the QDMs, with respect to the InAs coverages ranging between 0.8 and 2.4 ML. Optical characterization shows that the resulting nanostructures are high-quality nanocrystals.

  4. Crosstalk study of near infrared InGaAs detectors

    NASA Astrophysics Data System (ADS)

    Li, Xue; Tang, Hengjing; Li, Tao; Fan, Cui; Shao, Xiumei; Li, Jianwei; Wei, Jun; Gong, Haimei

    2016-05-01

    Crosstalk characteristics of high density FPA detectors attract widespread attention in the application of electro-optical systems. Crosstalk characteristics of near-infrared (NIR) InGaAs photodiodes and focal plane arrays (FPAs) were studied in this paper. The mesa type detector was investigated by using laser beam induced current technique (LBIC) to measure the absorption outside the designed photosensitive area, and the results show that the excess absorption enlarges the crosstalk of the adjacent pixels. The structure optimization using the effective absorption layer between the pixels can effectively reduce the crosstalk to 2.5%. The major crosstalk components of the optimization photodiode come from the electronic signal caused by carrier lateral diffusion. For the planar type detectors, test structures were used to compare the crosstalk of different structures, and the guard ring structure shows good suppression of the crosstalk. Then the back-illuminated 32x32 InGaAs photodiodes with 30μm pitch were designed, and LBIC was used to measure its lateral diffusion of the effective carriers and fill factor of photosensitive area. The results indicate that the fill factor of detectors can reach up to 98% when the diffusion region is optimized, and the minimum response exists between two neighborhood pixels. Based on these crosstalk measurement results and optimizing structure designs, the linear InGaAs photodiodes were designed and thus the InGaAs FPA assembly was fabricated. The assembly shows higher electro-optical performance and good improvement on crosstalk. The assembly was applied in infrared imaging system and modulation transfer function (MTF) of FPA assembly was calculated to be above 0.50. The clear image based on FPA assembly was obtained.

  5. Defect-Induced Photoluminescence Blinking of Single Epitaxial InGaAs Quantum Dots

    NASA Astrophysics Data System (ADS)

    Hu, Fengrui; Cao, Zengle; Zhang, Chunfeng; Wang, Xiaoyong; Xiao, Min

    2015-03-01

    Here we report two types of defect-induced photoluminescence (PL) blinking behaviors observed in single epitaxial InGaAs quantum dots (QDs). In the first type of PL blinking, the ``off'' period is caused by the trapping of hot electrons from the higher-lying excited state (absorption state) to the defect site so that its PL rise lifetime is shorter than that of the ``on'' period. For the ``off'' period in the second type of PL blinking, the electrons relax from the first excited state (emission state) into the defect site, leading to a shortened PL decay lifetime compared to that of the ``on'' period. This defect-induced exciton quenching in epitaxial QDs, previously demonstrated also in colloidal nanocrystals, confirms that these two important semiconductor nanostructures could share the same PL blinking mechanism.

  6. Dielectric function of InGaAs in the visible

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. E.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1990-01-01

    Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

  7. Dielectric function of InGaAs in the visible

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Yao, H. D.; Snyder, P. G.; Woolam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.; Sieg, R. E.

    1990-01-01

    Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X (0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

  8. Metastable growth of pure wurtzite InGaAs microstructures.

    PubMed

    Ng, Kar Wei; Ko, Wai Son; Lu, Fanglu; Chang-Hasnain, Connie J

    2014-08-13

    III-V compound semiconductors can exist in two major crystal phases, namely, zincblende (ZB) and wurtzite (WZ). While ZB is thermodynamically favorable in conventional III-V epitaxy, the pure WZ phase can be stable in nanowires with diameters smaller than certain critical values. However, thin nanowires are more vulnerable to surface recombination, and this can ultimately limit their performances as practical devices. In this work, we study a metastable growth mechanism that can yield purely WZ-phased InGaAs microstructures on silicon. InGaAs nucleates as sharp nanoneedles and expand along both axial and radial directions simultaneously in a core-shell fashion. While the base can scale from tens of nanometers to over a micron, the tip can remain sharp over the entire growth. The sharpness maintains a high local surface-to-volume ratio, favoring hexagonal lattice to grow axially. These unique features lead to the formation of microsized pure WZ InGaAs structures on silicon. To verify that the WZ microstructures are truly metastable, we demonstrate, for the first time, the in situ transformation from WZ to the energy-favorable ZB phase inside a transmission electron microscope. This unconventional core-shell growth mechanism can potentially be applied to other III-V materials systems, enabling the effective utilization of the extraordinary properties of the metastable wurtzite crystals.

  9. Antibacterial potential of rutin conjugated with thioglycolic acid capped cadmium telluride quantum dots (TGA-CdTe QDs)

    NASA Astrophysics Data System (ADS)

    Ananth, Devanesan Arul; Rameshkumar, Angappan; Jeyadevi, Ramachandran; Jagadeeswari, Sivanadanam; Nagarajan, Natarajan; Renganathan, Rajalingam; Sivasudha, Thilagar

    2015-03-01

    Quantum dots not only act as nanocarrier but also act as stable and resistant natural fluorescent bio markers used in various in vitro and in vivo photolabelling and biological applications. In this study, the antimicrobial potential of TGA-CdTe QDs and commercial phenolics (rutin and caffeine) were investigated against Escherichiacoli. UV absorbance and fluorescence quenching study of TGA-CdTe QDs with rutin and caffeine complex was measured by spectroscopic technique. QDs-rutin conjugate exhibited excellent quenching property due to the -OH groups present in the rutin structure. But the same time caffeine has not conjugated with QDs because of lacking of -OH group in its structure. Photolabelling of E. coli with QDs-rutin and QDs-caffeine complex was analyzed by fluorescent microscopic method. Microbe E. coli cell membrane damage was assessed by atomic force (AFM) and confocal microscopy. Based on the results obtained, it is suggested that QDs-rutin conjugate enhance the antimicrobial activity more than the treatment with QDs, rutin and caffeine alone.

  10. Studying of photoluminescence characteristics of CdTe/ZnS QDs manipulated by TiO2 inverse opal photonic crystals

    NASA Astrophysics Data System (ADS)

    Chi, Xiao-Chun; Yang, Ying-Shu; Wang, Ying-Hui; Gao, Jie-Chao; Sui, Ning; Yang, Hai-Gui; Zou, Lu; Kang, Zhi-Hui; Zhang, Han-Zhuang

    2015-08-01

    The photoluminescence (PL) characteristics of CdTe/ZnS quantum dots (QDs) infiltrated in TiO2 inverse opal photonic crystals (PCs) are studied in detail. The PL dynamics of QDs show that the PCs could accelerate the PL relaxation rate of QDs as the PL peak of QDs is overlapped with the photonic stop band of PCs. Besides, the PCs could decrease the activation energy of QDs due to its porous structure and suppress the exciton annihilation process of QDs at high excitation intensity, owing to the light scattering effect. The final results are beneficial for people in further understanding the role of inverse opal PCs on manipulating the PL characteristics of QDs.

  11. Development and characterization of PCDTBT:CdSe QDs hybrid solar cell

    SciTech Connect

    Dixit, Shiv Kumar Bhatnagar, Chhavi Kumari, Anita Madhwal, Devinder Bhatnagar, P. K. Mathur, P. C.

    2014-10-15

    Solar cell consisting of low band gap polymer poly[N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10, 30-benzothiadiazole)] (PCDTBT) as donor and cadmium selenide/zinc sulphide (CdSe/ZnS) core shell quantum dots (QDs) as an acceptor has been developed. The absorption measurements show that the absorption coefficient increases in bulk heterojunction (BHJ) structure covering broad absorption spectrum (200nm–700nm). Also, the photoluminescence (PL) of the PCDTBT:QDs film is found to decrease by an order of magnitude showing a significant transfer of electrons to the QDs. With this approach and under broadband white light with an irradiance of 8.19 mW/cm{sup 2}, we have been able to achieve a power conversion efficiency (PCE) of 3.1 % with fill factor 0.42 for our typical solar cell.

  12. First-principles survey of the structure, formation energies, and transition levels of As-interstitial defects in InGaAs

    NASA Astrophysics Data System (ADS)

    Lee, S. R.; Wright, A. F.; Modine, N. A.; Battaile, C. C.; Foiles, S. M.; Thomas, J. C.; Van der Ven, A.

    2015-07-01

    While point defects in elemental (Si) and compound (GaAs, GaN, AlN) semiconductors have been extensively studied both experimentally and theoretically, only limited theoretical studies of these defects exist for technologically important binary (S ixG e1 -x) and pseudobinary (I nxG a1 -xAs , I nxG a1 -xN , A lxG a1 -xN ) semiconductor alloys. Here, we use density-functional theory and a recently developed bounds-analysis approach to survey the atomic structures, formation energies, and charge-state transition levels of the stable and metastable states of As interstitials in the pseudobinary alloy I n0 .5G a0 .5As . Our studies consider seven different candidate defect structures for the As interstitial, with calculations performed for selected defect charge states in the range q =-2 to +3 . In each case, the mean and standard deviations of the defect-formation energy are determined using statistical sampling methods that place the defect into a wide variety of differing local-alloy environments. When examined from the point of view of the mean formation energy of the defect, the stable configurations of the As interstitial in I n0 .5G a0 .5As are found to resemble previous findings for GaAs, with a C1 h-p 001III interstitial structure in a q =+1 charge state favored near midgap and below, and a C2 v-11 0a split-interstitial structure in a q =-1 charge state favored above midgap (the named point-group symmetries refer to the underlying symmetry that the alloy defect would possess if within GaAs). The statistical sampling reveals a strong dependence of the defect-formation energy on the local-alloy environment, with the standard deviation σ of the formation energy approaching 0.21 eV for the most stable As-interstitial structures. Because the range of ground-state energies encountered by an As-interstitial defect when moving through the alloy is found to be quite large, approaching ˜1.2 eV (±3 σ ) , defect-diffusion pathways in I n0 .5G a0 .5As will have spatial

  13. Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Kongjaeng, Pornsiri; Sanorpim, Sakuntam; Yamamoto, Takahisa; Ono, Wataru; Nakajima, Fumio; Katayama, Ryuji; Onabe, Kentaro

    2007-01-01

    The use of the nearly lattice-matched In xGa 1-xAs pseudo-substrate has been explored for the growth of In xGa 1-xAs 1-yN y with higher In ( x) contents by metalorganic vapor phase epitaxy (MOVPE). As compared with the quality of high In-containing In 0.3Ga 0.7As 0.98N 0.02 films grown directly on GaAs substrates, the growth on In 0.2Ga 0.8As pseudo-lattice-matched substrates yielded good structural quality films. The number of misfit dislocations investigated by cross-sectional transmission electron microscopy was found to be reduced in the InGaAsN grown layer. Furthermore, higher optical quality In 0.3Ga 0.7As 0.98N 0.02 films with the bandgap of 1.01 eV were grown on the In 0.2Ga 0.8As pseudo-lattice-matched substrate. This study shows that the use of the In xGa 1-xAs pseudo-lattice-matched substrate is an effective method to fabricate a thick lattice-matched InGaAsN layers with higher optical and structural qualities necessary for the development of the multijunction (MJ) solar cells.

  14. Dark current reduction for 2.5 {micro}m wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature

    SciTech Connect

    D`Hondt, M.; Moerman, I.; Demeester, P.

    1996-12-31

    Optical components with wavelengths ranging between 1.5 and 2.5{micro}m are becoming increasingly important. Applications include various earth observation missions, NIR spectroscopy and fiber-optic communications at 2.55{micro}m. A possible material candidate for devices at 2.5{micro}m wavelength is In{sub .82}Ga{sub .18}As with a lattice mismatch of {+-}2% with respect to the InP-substrate. To improve optical and electrical performances of a mismatched device an effective buffer layer structure is wanted: a good buffer layer prevents the generated dislocations to propagate towards the mismatched active layer. Especially the dark current, which needs to be very low for space applications (low noise), is strongly influenced by those dislocations which act as generation-recombination centers. The authors describe the influence of growth temperature, bufferlayer structure and substrate orientation on the dark current density of test devices. All growth runs were performed by means of low-pressure MOVPE, using a horizontal liner. The processing of these devices consisted of deposition of TiAu contacts, by using a removable Ni mask, with openings of different size and shape. These metal contacts were in turn used as a mask for the etching of the mesa. Afterwards a AuGe/Ni back contact was deposited.

  15. Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

    SciTech Connect

    Chang, C.-Y. Takenaka, M.; Takagi, S.; Ichikawa, O.; Osada, T.; Hata, M.; Yamada, H.

    2015-08-28

    We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectiveness of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.

  16. Dimensionality of InGaAs nonlinear optical response

    SciTech Connect

    Bolton, S.R. |

    1995-07-01

    In this thesis the ultrafast optical properties of a series of InGaAs samples ranging from the two to the three dimensional limit are discussed. An optical system producing 150 fs continuum centered at 1.5 microns was built. Using this system, ultrafast pump-probe and four wave mixing experiments were performed. Carrier thermalization measurements reveal that screening of the Coulomb interaction is relatively unaffected by confinement, while Pauli blocking nonlinearities at the band edge are approximately twice as strong in two dimensions as in three. Carrier cooling via phonon emission is influenced by confinement due both to the change in electron distribution function and the reduction in electron phonon coupling. Purely coherent band edge effects, as measured by the AC Stark effect and four wave mixing, are found to be dominated by the changes in excitonic structure which take place with confinement.

  17. High net modal gain (>100 cm(-1)) in 19-stacked InGaAs quantum dot laser diodes at 1000 nm wavelength band.

    PubMed

    Tanoue, Fumihiko; Sugawara, Hiroharu; Akahane, Kouichi; Yamamoto, Naokatsu

    2013-07-01

    An InGaAs quantum dot (QD) laser diode with 19-stacked QDs separated by 20 nm-thick GaAs spacers was fabricated using an ultrahigh-rate molecular beam epitaxial growth technique, and the laser characteristics were evaluated. A 19-stacked simple broad area QD laser diode was lased at the 1000 nm waveband. A net modal gain of 103 cm(-1) was obtained at 2.25 kA/cm(2), and the saturated modal gain was 145.6 cm(-1); these are the highest values obtained to our knowledge. These results indicate that using this technique to highly stack QDs is effective for improving the net modal gain of QD lasers.

  18. Systematic investigation of the toxicity interaction of ZnSe@ZnS QDs on BSA by spectroscopic and microcalorimetry techniques.

    PubMed

    Ding, Ling; Zhou, Peijiang; Zhan, Hongju; Zhao, Xiaohu; Chen, Chi; He, Zhenyu

    2013-08-01

    The interaction of ZnSe@ZnS quantum dots (QDs) and bovine serum albumin (BSA) was investigated by means of fluorescence (FL) spectrometry, circular dichroism (CD) spectra, and isothermal titration calorimetry (ITC). The fluorescence intensity of BSA decreased regularly with the increasing of QDs concentration. The decrease of BSA fluorescence intensity was proved to be a kind of static quenching. CD results show the helicity of BSA decreased from 38.04% to 26.51% with the addition of QDs, which suggests a stronger structural change that is related to a low degree of surface coverage. And also, both ion strength and pH value could affect the interaction between BSA and QDs, suggesting that both the static electronic attraction and H-bond contribute to the interaction between BSA and QDs. The thermodynamics of interaction between BSA and QDs were calculated from ITC data. Both enthalpy and entropy changes were favorable for the interaction in Tris-buffer, while only enthalpy change was favorable for the interaction in NaCl or HCl solution.

  19. Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)-(4x2).

    PubMed

    Clemens, Jonathon B; Bishop, Sarah R; Lee, Joon Sung; Kummel, Andrew C; Droopad, Ravi

    2010-06-28

    Hafnium oxide interfaces were studied on two related group III rich semiconductor surfaces, InAs(0 0 1)-(4x2) and In(0.53)Ga(0.47)As(0 0 1)-(4x2), via two different methods: reactive oxidation of deposited Hf metal and electron beam deposition of HfO(2). The interfaces were investigated with scanning tunneling microscopy and spectroscopy (STS). Single Hf atom chemisorption sites were identified that are resistant to oxidation by O(2), but Hf islands are reactive to O(2). After e(-) beam deposition of <1 ML of HfO(2), single chemisorption sites were identified. At low coverage (<1 ML), the n-type and p-type HfO(2)/InGaAs(0 0 1)-(4x2) interfaces show p-type character in STS, which is typical of clean InGaAs(0 0 1)-(4x2). After annealing below 200 degrees C, full coverage HfO(2)/InGaAs(0 0 1)-(4x2) (1-3 ML) has the surface Fermi level shifted toward the conduction band minimum for n-type InGaAs, but near the valence band maximum for p-type InGaAs. This is consistent with the HfO(2)/InGaAs(0 0 1)-(4x2) interface being at least partially unpinned, i.e., a low density of states in the band gap. The partially unpinned interface results from the modest strength of the bonding between HfO(2) and InGaAs(0 0 1)-(4x2) that prevents substrate atom disruption. The fortuitous structure of HfO(2) on InAs(0 0 1)-(4x2) and InGaAs(0 0 1)-(4x2) allows for the elimination of the partially filled dangling bonds on the surface, which are usually responsible for Fermi level pinning.

  20. Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)-(4x2)

    SciTech Connect

    Clemens, Jonathon B.; Bishop, Sarah R.; Kummel, Andrew C.; Lee, Joon Sung

    2010-06-28

    Hafnium oxide interfaces were studied on two related group III rich semiconductor surfaces, InAs(0 0 1)-(4x2) and In{sub 0.53}Ga{sub 0.47}As(0 0 1)-(4x2), via two different methods: reactive oxidation of deposited Hf metal and electron beam deposition of HfO{sub 2}. The interfaces were investigated with scanning tunneling microscopy and spectroscopy (STS). Single Hf atom chemisorption sites were identified that are resistant to oxidation by O{sub 2}, but Hf islands are reactive to O{sub 2}. After e{sup -} beam deposition of <<1 ML of HfO{sub 2}, single chemisorption sites were identified. At low coverage (<1 ML), the n-type and p-type HfO{sub 2}/InGaAs(0 0 1)-(4x2) interfaces show p-type character in STS, which is typical of clean InGaAs(0 0 1)-(4x2). After annealing below 200 deg. C, full coverage HfO{sub 2}/InGaAs(0 0 1)-(4x2) (1-3 ML) has the surface Fermi level shifted toward the conduction band minimum for n-type InGaAs, but near the valence band maximum for p-type InGaAs. This is consistent with the HfO{sub 2}/InGaAs(0 0 1)-(4x2) interface being at least partially unpinned, i.e., a low density of states in the band gap. The partially unpinned interface results from the modest strength of the bonding between HfO{sub 2} and InGaAs(0 0 1)-(4x2) that prevents substrate atom disruption. The fortuitous structure of HfO{sub 2} on InAs(0 0 1)-(4x2) and InGaAs(0 0 1)-(4x2) allows for the elimination of the partially filled dangling bonds on the surface, which are usually responsible for Fermi level pinning.

  1. n/p/n Tunnel Junction InGaAs Monolithic Interconnected Module (MIM)

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Murray, Christopher S.; Fatemi, Navid S.; Weizer, Victor

    2005-01-01

    The Monolithic Interconnected Module (MIM), originally introduced at the First NREL thermophotovoltaic (TPV) conference, consists of low-bandgap indium gallium arsenide (InGaAs) photovoltaic devices, series interconnected on a common semi-insulating indium phosphide (inP) substrate. An infrared reflector is deposited on the back surface of the substrate to reflect photons, which were not absorbed in the first pass through the structure. The single largest optical loss in the current device occurs int he heavily doped p-type emitter. A new MIM design (pat.pend.) has been developed which flips the polarity of the conventional MIM cell (i.e., n/p rather than p/n), eliminating the need for the high conductivity p-type emitter. The p-type base of the cell is connected to the n-type lateral conduction layer through a thin InGaAs tunnel junction. 0.58 eV and 0.74 eV InGaAs devices have demonstrated reflectances above 90% for wavelengths beyond the bandgap (greater than 95% for unprocessed structures). Electrical measurements indicate minimal voltage drops across the tunnel junction (less than mV/junction under 1200K-blackbody illumnination) and fill factors that are above 70% at current densities (J(sub sc)) above 8 Angstroms per square centimeters for the 0.74eV devices.

  2. Site-Controlled Growth of Single InP QDs

    SciTech Connect

    Vlasov, A. S. Mintairov, A. M.; Kalyuzhnyy, N. A.; Mintairov, S. A.; Salii, R. A.; Denisyuk, A. I.; Babunts, R. A.

    2015-08-15

    The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate “defects” formed by a focused beam of Ga{sup +} ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 (μm){sup −2} can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer.

  3. Electrical and Optical Performance Characteristics of p/n InGaAs Monolithic Interconnected Modules

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Fatemi, Navid S.; Jenkins, Phillip P.; Weizer, Victor G.; Hoffman, Richard W., Jr.; Murray, Christopher S.; Riley, David R.

    1997-01-01

    There has been a traditional trade-off in ThermoPhotoVoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A Monolithic Interconnected Module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual Indium Gallium Arsenide (InGaAs) devices series-connected on a single semi-insulating Indium Phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An InfraRed (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74eV InGaAs, have demonstrated V(sub infinity) = 3.2 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. IR reflectance measurements (greater than 2 microns) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

  4. Fluorescence of colloidal PbSe/PbS QDs in NIR luminescent solar concentrators.

    PubMed

    Aeberhard, Urs; Vaxenburg, Roman; Lifshitz, Efrat; Tomić, Stanko

    2012-12-21

    For applications in luminescent solar concentrators harvesting subgap photons, either via direct irradiation of solar cells with optimized band gap or via sensitization of an up-conversion process, exact knowledge and tunability of both the spectral shape and the intensity of the emission are of paramount importance. In this work, we investigate theoretically the photoluminescence spectra of colloidal core-shell PbSe/PbS QDs with type II alignments in the valence band. The method builds on a steady-state formulation of the non-equilibrium Greens function theory for a microscopic system of coupled electrons, photons and phonons interfaced with electronic structure calculations based on a k·p model for PbSe/PbS core-shell QDs. The resulting output spectral density of photons in a realistic QD ensemble is obtained via the renormalization of the incident spectrum according to the polarization of the system.

  5. A low noise high readout speed 512×128 ROIC for shortwave InGaAs FPA

    NASA Astrophysics Data System (ADS)

    Huang, SongLei; Huang, Zhangcheng; Chen, Yu; Tang, Hengjing; Fang, Jiaxiong

    2015-03-01

    A low noise high readout speed 512×128 readout Integrated circuit (ROIC) based on capacitance trans-impedance amplifier (CTIA) is designed in this paper. The ROIC is flip-chip bonded with Indium bumps to InGaAs detectors which cutoff wavelength is 1.7μm, as a hybrid structure (InGaAs FPA). The ROIC with 30μm pixel pitch and 50fF integrated capacitance, is fabricated in 0.5μm DPTM CMOS process. The results show that output noise is about 3.0E-4V which equivalent readout noise is 95e-, output voltage swing is better than 2.5V; the dynamic range of InGaAs FPA reaches 69.7dB@2ms, and the power dissipation is about 175mw. The peak detectivity of InGaAs FPA reaches 2E12cmHz1/2w-1 at 300K without TEC cooling.

  6. Energetics of neutral Si dopants in InGaAs: An ab initio and semiempirical Tersoff model study

    NASA Astrophysics Data System (ADS)

    Lee, Cheng-Wei; Lukose, Binit; Thompson, Michael O.; Clancy, Paulette

    2015-03-01

    A roadblock in utilizing III-V semiconductors for scaled-down electronic devices is their poor dopant activation. As a first step to unravel the dopant behavior in InGaAs, we studied the tendency for dopant formation computationally using two approaches: ab initio and semiempirical methods. We studied a number of structural possibilities, such as the impact of local sites and local and global environments. We will show that the dopant we considered here, Si, has discrete preferences for certain sites and the nature of its surroundings. Substitutional defects are clearly preferred over interstitial locations. We shall show that cation ordering has an impact on dopant energetics. Critically, for large-scale simulations of dopant diffusion in InGaAs alloys, we also present a parameterization of the Abell-Tersoff semiempirical potential for pairwise interactions between silicon atoms and each of the elements constituting InGaAs. In the absence of experimental data, reference parameters for estimating the Tersoff values were obtained using ab initio pseudopotential calculations (density functional theory and generalized gradient approximations). These sets of Tersoff parameters were optimized to describe the bulk structural properties of the mostly theoretical alloys Si-As, Si-Ga, and Si-In. We demonstrate the transferability of these parameters by predicting formation energies of extrinsic point "defects" of Si on a variety of sites in ternary InGaAs alloys with different local compositional configurations, both random and ordered. Tersoff model predictions of the extrinsic "substitution energy" of a Si dopant on a cationic lattice site were found to be independent of the composition of the dopant's second nearest neighbors, but were affected by the strain induced by a local arrangement of In and Ga cationic atoms. This finding is important since common deposition processes used to create InGaAs may lead to specifically ordered patterns within the cation sublattice.

  7. Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots

    NASA Technical Reports Server (NTRS)

    Oyafuso, F.; Klimeck, G.; Boykin, T. B.; Bowen, R. C.; Allmen, P. von

    2003-01-01

    NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.

  8. Characteristics of Monolithically Integrated InGaAs Active Pixel Image Array

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

    1999-01-01

    Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate.

  9. SWIR InGaAs focal plane arrays in France

    NASA Astrophysics Data System (ADS)

    Rouvié, A.; Huet, O.; Hamard, S.; Truffer, J. P.; Pozzi, M.; Decobert, J.; Costard, E.; Zécri, M.; Maillart, P.; Reibel, Y.; Pécheur, A.

    2013-06-01

    SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. The study of InGaAs FPA has begun few years ago with III-VLab, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has led to put quickly on the market a 320x256 InGaAs module. The recent transfer of imagery activities from III-VLab to Sofradir allows developing new high performances products, satisfying customers' new requirements. Especially, a 640x512 InGaAs module with a pitch of 15µm is actually under development to fill the needs of low light level imaging.

  10. Molecualr-scale multicoordinating ligands for coating luminescent QDs and gold nanoparticles

    NASA Astrophysics Data System (ADS)

    Zhan, Naiqian

    Colloidal semiconductor quantum dots (QDs) are inorganic nanocrystals that possess several unique photophysical properties, including tunable narrow emission and remarkable photo- and chemical stability. They have large surface area, and thus can be decorated with large numbers and a variety of molecular vectors. These properties combined offer a potentially superior alternative to traditional organic fluorophore for advanced applications in bio-imaging and bio-sensing. Herein, our effort has centered on developing a series of metal coordinating ligands with controllable structures to modify the QD surfaces and construct biocompatible nanocrystals. The ligand architecture accounts for several factors: (i) variable coordination number, (ii) nature of the hydrophilic moiety, polyethylene glycol (PEG) or zwitterion, and (iii) versatility of end-reactive groups including amine, azide, carboxylic acid and aldehyde. The ligand design is combined with a newly developed photoligation strategy to promote the dispersion of luminescent QDs in buffer media. The dissertation is organized in six chapters: In chapter 1, we provide a brief introduction of the basic photophysical properties of QDs and the synthesis history for growing high quality semiconductor nanocrystals. We also present some of the most effective methods reported to date to prepare aqueous QD dispersions, discuss the effective chemical coupling strategies for conjugating biomolecules, and review the recent literatures that have used QD-bioconjugates for imaging and sensing purposes. In Chapter 2, we describe a novel photoligation strategy to promote the transfer of luminescent QDs from hydrophobic to hydrophilic media using lipic acid (LA)-based ligands. We also discusse the experimental conditions, mechanismfor in-situ ligand exchange and the generosity of the method towards the diverse functionality while maintaining the optical properties of the nanocrystals. In chapter 3, we present the design and synthesis

  11. Preparation of water soluble L-arginine capped CdSe/ZnS QDs and their interaction with synthetic DNA: Picosecond-resolved FRET study

    SciTech Connect

    Giri, Anupam; Goswami, Nirmal; Lemmens, Peter; Pal, Samir Kumar

    2012-08-15

    Graphical abstract: Förster resonance energy transfer (FRET) studies on the interaction of water soluble arginine-capped CdSe/ZnS QDs with ethidium bromide (EB) labeled synthetic dodecamer DNA. Highlights: ► We have solubilized CdSe/ZnS QD in water replacing their TOPO ligand by L-arginine. ► We have studied arginine@QD–DNA interaction using FRET technique. ► Arginine@QDs act as energy donor and ethidium bromide-DNA acts as energy acceptor. ► We have applied a kinetic model to understand the kinetics of energy transfer. ► Circular dichroism studies revealed negligible perturbation in the DNA B-form in the arg@QD-DNA complex. -- Abstract: We have exchanged TOPO (trioctylphosphine oxide) ligand of CdSe/ZnS core/shell quantum dots (QDs) with an amino acid L-arginine (Arg) at the toluene/water interface and eventually rendered the QDs from toluene to aqueous phase. We have studied the interaction of the water soluble Arg-capped QDs (energy donor) with ethidium (EB) labeled synthetic dodecamer DNA (energy acceptor) using picoseconds resolved Förster resonance energy transfer (FRET) technique. Furthermore, we have applied a model developed by M. Tachiya to understand the kinetics of energy transfer and the distribution of acceptor (EB-DNA) molecules around the donor QDs. Circular dichroism (CD) studies revealed a negligible perturbation in the native B-form structure of the DNA upon interaction with Arg-capped QDs. The melting and the rehybridization pathways of the DNA attached to the QDs have been monitored by the CD which reveals hydrogen bonding is the associative mechanism for interaction between Arg-capped QDs and DNA.

  12. Influence of pH on the thermo-optic properties of CdSe QDs prepared by a microwave irradiation method

    NASA Astrophysics Data System (ADS)

    Augustine, Anju K.; Girijavallabhan, C. P.; Nampoori, V. P. N.; Kailasnath, M.

    2014-11-01

    In this letter the optical behavior as well as the thermal properties of CdSe quantum dots (QDs) capped with mercapto succinic acid (MSA) are studied and analyzed. CdSe QDs with an average particle size of 7.0 nm are prepared by a microwave irradiation method. The unique structure of MSA plays an important role in determining the PL intensity and better stability by controlling the pH of the medium. A significant increase in thermal diffusivity with pH values is observed with a mode matched thermal lens method. At the optimum value of pH, the surface charge of nanoparticles increases, which increases the repulsive forces. The resulting reduced agglomeration of QDs enhances mobility and improves heat transport. There is a clear correlation between luminous intensity and thermal diffusivity in these nano fluids containing CdSe QDs.

  13. InGaAs focal plane array developments and perspectives

    NASA Astrophysics Data System (ADS)

    Rouvié, A.; Coussement, J.; Huet, O.; Truffer, J. P.; Pozzi, M.; Oubensaid, E. H.; Hamard, S.; Chaffraix, V.; Costard, E.

    2015-05-01

    SWIR spectral band is an attractive domain thanks to its intrinsic properties. Close to visible wavelengths, SWIR images interpretation is made easier for field actors. Besides complementary information can be extracted from SWIR band and bring significant added value in several fields of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). Among the various new technologies able to detect SWIR wavelengths, InGaAs appears as a key technology. Initially developed for optical telecommunications, this material guaranties performances, stability and reliability and is compatible with attractive production capacity. Thanks to high quality material, very low dark current levels can be achieved at ambient temperature. Then uncooled operation can be set up, allowing compact and low power systems. Since the recent transfer of InGaAs imaging activities from III-Vlab, Sofradir provides a framework for the production activity with the manufacturing of high performances products: CACTUS320 SW. The developments towards VGA format with 15μm pixel pitch, lead today to the industrialization of a new product: SNAKE. On one side, the InGaAs detection array presents high performances in terms of dark current and quantum efficiency. On the other side, the low noise ROIC has different additional functionalities. Then this 640x512 @ 15μm sensor appears as well suited to answer the needs of a wide range of applications. In this paper, we will present the Sofradir InGaAs technology, the performances of our last product SNAKE and the perspectives of InGaAs new developments.

  14. A sensitive photoelectrochemical biosensor for AFP detection based on ZnO inverse opal electrodes with signal amplification of CdS-QDs.

    PubMed

    Xu, Ru; Jiang, Yandong; Xia, Lei; Zhang, Tianxiang; Xu, Lin; Zhang, Shuang; Liu, Dali; Song, Hongwei

    2015-12-15

    In this work, ZnO inverse opals structure (IOs) based photoelectrochemical (PEC) electrode was fabricated for alpha-fetoprotein (AFP) detection. Then, the uniform CdS quantum dots (QDs) were hydrothermally synthesized, which allowed the binding of AFP and glucose oxidase (GOD) on CdS QDs, forming the AFP-CdS-GOD composite. The competitive immunosensor of AFP and the AFP-CdS-GOD composite with anti-AFP antibodies (Ab) immobilized on FTO (fluorine-doped tin oxide) /ZnO IOs electrode was successfully applied to the detection of AFP. GOD could catalyze glucose to produce hydrogen peroxide (H2O2) acting as an electron donor to scavenge photogenerated holes in the valence band of CdS QDs, reducing the recombination of electrons and holes of CdS QDs. Also the effective energy level matching between the conduction bands of CdS QDs and ZnO widened the range of light absorption, allowing for electron injection from excited CdS QDs to ZnO upon visible light irradiation, which enhanced the photocurrent. The results show that the immunosensor of AFP possesses a large linear detection range of 0.1-500 ng/ml with a detection limit of 0.01 ng/ml. It also exhibits excellent anti-interference property and acceptable stability. This work provides a promising method for achieving excellent photoelectrochemical biosensor detection of other proteins. PMID:26164013

  15. A sensitive photoelectrochemical biosensor for AFP detection based on ZnO inverse opal electrodes with signal amplification of CdS-QDs.

    PubMed

    Xu, Ru; Jiang, Yandong; Xia, Lei; Zhang, Tianxiang; Xu, Lin; Zhang, Shuang; Liu, Dali; Song, Hongwei

    2015-12-15

    In this work, ZnO inverse opals structure (IOs) based photoelectrochemical (PEC) electrode was fabricated for alpha-fetoprotein (AFP) detection. Then, the uniform CdS quantum dots (QDs) were hydrothermally synthesized, which allowed the binding of AFP and glucose oxidase (GOD) on CdS QDs, forming the AFP-CdS-GOD composite. The competitive immunosensor of AFP and the AFP-CdS-GOD composite with anti-AFP antibodies (Ab) immobilized on FTO (fluorine-doped tin oxide) /ZnO IOs electrode was successfully applied to the detection of AFP. GOD could catalyze glucose to produce hydrogen peroxide (H2O2) acting as an electron donor to scavenge photogenerated holes in the valence band of CdS QDs, reducing the recombination of electrons and holes of CdS QDs. Also the effective energy level matching between the conduction bands of CdS QDs and ZnO widened the range of light absorption, allowing for electron injection from excited CdS QDs to ZnO upon visible light irradiation, which enhanced the photocurrent. The results show that the immunosensor of AFP possesses a large linear detection range of 0.1-500 ng/ml with a detection limit of 0.01 ng/ml. It also exhibits excellent anti-interference property and acceptable stability. This work provides a promising method for achieving excellent photoelectrochemical biosensor detection of other proteins.

  16. Hole transfer dynamics from QDs to tethered ferrocene derivatives

    NASA Astrophysics Data System (ADS)

    Alivisatos, A. Paul

    Quantum dots (QDs) have shown particular promise in recent years as light absorbers in solar energy conversion schemes. However, in solution junction solar devices such as QD-sensitized solar cells and photocatalytic water splitting systems, efficiencies are often limited by hole transfer from the photoexcited QD. This process is sluggish and can lead to oxidative photocorrosion of the QD material. In order to design highly efficient nanocrystal systems with hole transfer rates that outcompete these undesirable processes, a fundamental understanding of the parameters that control these rates is imperative.We have developed a model system to study charge transfer from QDs to surface bound acceptors, to fundamentally understand the charge transfer processes for QD systems, namely electronic coupling between the donor and acceptor and the thermodynamic driving force for the hole transfer process. Specifically, we examine hole transfer from the nearly spherical CdSe-core CdS-shell QDs with photoluminescence (PL) quantum yields over 80% to ferrocene derivatives bound to the QD surface via an alkane thiol linker. In this system, we mitigate the ill-defined nonradiative charge dynamic pathways that are intrinsic to native CdSe cores, and then controllably engineer on the surface charge acceptors with well-defined oxidation potentials, spatial distribution, and quantity. By Measuring the PL lifetime decay and calibrating the number of hole acceptor ligands per QD via quantitative `H NMR, we extracted the hole transfer rate per acceptor. This rate per acceptor could be varied over four orders of magnitude by changing the coupling between donor and acceptor through modulations in the CdS shell thickness and alkane chain length of the molecule. Furthermore, owning to the large number of acceptors on the surface, we achieve systems in which ~99% of the photoexcited holes are transferred to these well-defined mediators.We further mapped the relationship between the

  17. Buffer Layer Effects on Tandem InGaAs TPV Devices

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

    2004-01-01

    Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of

  18. Enhance antimicrobial activity of ZnO nanomaterial's (QDs and NPs) and their analytical applications

    NASA Astrophysics Data System (ADS)

    Wahab, Rizwan; Khan, Farheen; Lutfullah; Singh, R. B.; Khan, Asif

    2014-08-01

    The small scale nanomaterial's such as quantum dots and nanoparticles, which have unique properties studied under varying conditions. Various techniques were used in order to best understand the structure of ZnO nanoparticles and quantum dots, which inhibit the growth of Escherichia coli bacteria under dose dependent manner. The results of obtained datas were confirmed with statistical analytical methods. The linear regressive equation data obtained from UV-visible spectra, which give satisfactory results and allows to quickly and easily calculate statistical datas such as: concentration range of analytes, mean, standard deviation, variance and standard analytical error, relative standard deviation, coefficient of correlation, variance of regression line errors in the slope and the intercept, confidence limit for the slope and the intercept. Instead, validation is an important trait measure by any methods due to near to the quality of results. The proposed method validated by specificity, precision, accuracy, limit detection and quantitation. The absorption spectra of sample solution were recorded maximum absorbance for both nanoparticles (NPs) and quantum dots (QDs) at ʎmax 600 nm, this wavelength was suitable and selected for all operational analytical measurements. The size and shape of the prepared NPs and QDs were examined with sophisticated instruments such as FESEM and TEM, whereas crystallinity of the prepared materials was analyzed with X-ray diffraction pattern (XRD).

  19. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate

    PubMed Central

    2012-01-01

    We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.76ev. The low-energy peak blueshifted with increasing excitation power is identified as the indirect transition from the InGaAs conduction band to the GaSb hole level (type-II), and the high-energy peak is identified as the direct transition (type-I) of GaSb QDs. This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor. PMID:22277096

  20. Optical fiber amplifiers based on PbS/CdS QDs modified by polymers.

    PubMed

    Sun, Xiaolan; Xie, Libin; Zhou, Wei; Pang, Fufei; Wang, Tingyun; Kost, Alan R; An, Zesheng

    2013-04-01

    Optical fiber amplifiers based on PbS/CdS semiconductor quantum dots (QDs) modified by an amphiphilic polymer were demonstrated. Well-defined QDs and an amphiphilic copolymer were first prepared and the amphiphilic copolymer was then used to disperse the QDs into silica sol to allow uniform and reproducible incorporation of QDs into the silica coating of the optical fibers. QD-doped silica sol was deposited on the fusion tapered fiber coupler via dip-coating. A 1550 nm semiconductor light emitting diode as the signal source and a 980 nm laser diode as the pump source were injected into the fiber coupler simultaneously. Through evanescent wave excitation, a signal gain as high as 8 dB was obtained within the wavelength range between 1450 and 1650 nm. In addition, the optical fiber amplifiers based on PbS/CdS QDs showed enhanced thermal stability when compared to amplifiers based on PbS QDs.

  1. Optical fiber amplifiers based on PbS/CdS QDs modified by polymers.

    PubMed

    Sun, Xiaolan; Xie, Libin; Zhou, Wei; Pang, Fufei; Wang, Tingyun; Kost, Alan R; An, Zesheng

    2013-04-01

    Optical fiber amplifiers based on PbS/CdS semiconductor quantum dots (QDs) modified by an amphiphilic polymer were demonstrated. Well-defined QDs and an amphiphilic copolymer were first prepared and the amphiphilic copolymer was then used to disperse the QDs into silica sol to allow uniform and reproducible incorporation of QDs into the silica coating of the optical fibers. QD-doped silica sol was deposited on the fusion tapered fiber coupler via dip-coating. A 1550 nm semiconductor light emitting diode as the signal source and a 980 nm laser diode as the pump source were injected into the fiber coupler simultaneously. Through evanescent wave excitation, a signal gain as high as 8 dB was obtained within the wavelength range between 1450 and 1650 nm. In addition, the optical fiber amplifiers based on PbS/CdS QDs showed enhanced thermal stability when compared to amplifiers based on PbS QDs. PMID:23571911

  2. New developments on InGaAs focal plane array

    NASA Astrophysics Data System (ADS)

    Coussement, J.; Rouvié, A.; Oubensaid, E. H.; Huet, O.; Hamard, S.; Truffer, J.-P.; Pozzi, M.; Maillart, P.; Reibel, Y.; Costard, E.; Billon-Lanfrey, D.

    2014-06-01

    SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. The recent transfer of imagery activities from III-VLab to Sofradir provides a framework for the production activity with the manufacturing of high performances products: CACTUS320 SW and CACTUS640 SW. The developments, begun at III-Vlab towards VGA format with 15μm pixel pitch, lead today to the industrialization of a new product: SNAKE SW. On one side, the InGaAs detection array presents high performances in terms of dark current and quantum efficiency. On the other side, the low noise ROIC has different additional functionalities. Then this 640×512 @ 15μm module appears as well suited to answer the needs of a wide range of applications. In this paper, we will present the Sofradir InGaAs technology, some performances optimization and the last developments leading to SNAKE SW.

  3. Analysis of Carrier Recombination Processes in 0.6 eV InGaAs Epitaxial Materials for Thermophotovoltaic Devices

    SciTech Connect

    D Donetsky; F Newman; M Dashiell

    2006-10-30

    Minority carrier lifetime was measured by time-resolved photoluminescence (TRPL) method in sets of p-type and n-type InGaAs double heterostructures (DH) moderately doped with Zn and Te, respectively. Contributions of the radiative and non-radiative recombination terms were separated by fitting experimental data to temperature dependences of the radiative term. The latter was modeled with measured fundamental absorption spectrum and the temperature dependence of the photon recycling effect was taken into account. Different temperature dependences of radiative terms for electron and hole materials were obtained. It was concluded that in 0.6 eV Te-doped InGaAs structures the radiative recombination controls the hole lifetime at liquid nitrogen temperatures, while Auger recombination dominates at room and above room temperatures. In similar 0.6 eV InGaAs with Zn-doped active regions Shockley-Read-Hall (SRH) recombination was found dominant in a wide temperature range from liquid nitrogen to above-room temperatures. Rapid decrease of electron lifetime with decrease of excess carrier concentration was observed and attributed to recombination through partially-ionized deep donor centers. The obtained data allows for more adequate modeling of the performance and design optimization of narrow-gap photonic devices based on InGaAs Indium-rich compounds.

  4. Phase transfer of hydrophobic QDs for water-soluble and biocompatible nature through silanization

    SciTech Connect

    Yang, Ping; Zhou, Guangjun

    2011-12-15

    Graphical abstract: A facile and novel method has been developed for creating water-soluble and biocompatible CdSe/ZnS quantum dots with a small hydrodynamic diameter (less than 10 nm) via silanization. Highlights: Black-Right-Pointing-Pointer A facile and novel method has been developed for creating water-soluble and biocompatible CdSe/ZnS quantum dots (QDs) with a small hydrodynamic diameter (less than 10 nm). Black-Right-Pointing-Pointer The control of ligand exchange plays an important role to retain high fluorescence quantum yields. Black-Right-Pointing-Pointer The functional SiO{sub 2}-coated QDs were conjugated with immunoglobin G antibody by using biotin-streptavidin as linkers. Black-Right-Pointing-Pointer The QD phase transfer by silanization is a well-established method for generating biocompatible QDs. -- Abstract: A novel method has been developed for creating water-soluble and biocompatible CdSe/ZnS quantum dots (QDs) with a small hydrodynamic diameter (less than 10 nm). The silanization of the QDs was carried out by using partially hydrolyzed tetraethyl orthosilicate (TEOS) to replace organic ammine or tri-n-octylphosphine oxide on the surface of the QDs. The partially hydrolyzed 3-mercaptopropyltrimethoxysilane attached to the hydrolyzed TEOS layer on the QDs prevented the QDs from agglomeration when the QDs were transferred into water. The functional SiO{sub 2}-coated QDs were conjugated with immunoglobin G antibody by using biotin-streptavidin as linkers. The SiO{sub 2}-coated QDs exhibited the same absorption and photoluminescence (PL) spectra as those of initial QDs in organic solvents. The SiO{sub 2}-coated QDs preserved PL intensities, is colloidally stable over a wide pH range (pH 6-11). Because the mean diameter of amphiphilic polymer-coated QDs was almost 2 times of that of functional SiO{sub 2}-coated QDs, the QD phase transfer by silanization is a well-established method for generating biocompatible QDs.

  5. Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells

    SciTech Connect

    Cilibrizzi, Pasquale; Askitopoulos, Alexis Silva, Matteo; Lagoudakis, Pavlos G.; Bastiman, Faebian; Clarke, Edmund; Zajac, Joanna M.; Langbein, Wolfgang

    2014-11-10

    The investigation of intrinsic interactions in polariton condensates is currently limited by the photonic disorder of semiconductor microcavity structures. Here, we use a strain compensated planar GaAs/AlAs{sub 0.98}P{sub 0.02} microcavity with embedded InGaAs quantum wells having a reduced cross-hatch disorder to overcome this issue. Using real and reciprocal space spectroscopic imaging under non-resonant optical excitation, we observe polariton condensation and a second threshold marking the onset of photon lasing, i.e., the transition from the strong to the weak-coupling regime. Condensation in a structure with suppressed photonic disorder is a necessary step towards the implementation of periodic lattices of interacting condensates, providing a platform for on chip quantum simulations.

  6. Spin injection from Co2MnGa into an InGaAs quantum well

    NASA Astrophysics Data System (ADS)

    Hickey, M. C.; Damsgaard, C. D.; Holmes, S. N.; Farrer, I.; Jones, G. A. C.; Ritchie, D. A.; Jacobsen, C. S.; Hansen, J. B.; Pepper, M.

    2008-06-01

    We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifetime and spin detection efficiency (22±4%). This work builds on existing studies on off-stoichiometric Heusler injectors into similar light-emitting-diode structures. The role of injector stoichiometry can therefore be quantitatively assessed with the result that the spin injection efficiency increases by a factor of approximately 2 as compared with an off-stoichiometric Co2.4Mn1.6Ga injector.

  7. The toxicity and invasive effects of QDs on mung bean development

    NASA Astrophysics Data System (ADS)

    Zhai, Peng; Wang, Xiaomei; Wang, Ruhua; Huang, Xuan; Feng, Gang; Lin, Guimiao; Chen, Qiang; Xu, Gaixia; Chen, Danni

    2014-09-01

    Objective: Nowadays, the nanomaterials have been applied in every aspects of our life, including cosmetics, fresh-keeping, antisepsis and medicines. However, we know little about the toxic effects of nanoparticles towards plants. In this thesis, we synthesized quantum dots (QDs), and then toxicity and invasive effects of QDs for mung beans were investigated. Methods: We synthesised red CdTe QDs in water sphase with L-Cystein stabilizers, then prepared different concentration of QDs solution to cultivate mung bean plant, the radical length of mung beans was measured after four days every day, after 7 days, the distribution of QDs in mung bean plant was recorded under the microscopic. Results: The result showed the QDs inhibited the growth of mung beans, the higher the concentration of QDs was, the greater the inhibition effect was. After 7 days, the radicle average lengths of mung beans in different concentrations of QDs solution - blank 0.1μmol/L 0.2μmol/L 0.5 μmol/L 1 μmol/L - were 19.350+/- 0.427, 14.050+/- 0.879, 10.525+/- 0.554, 7.250+/- 0.522, 7.650+/- 0.229. The QDs mostly adhered onto the root surface and hairs. Conclusion: In conclusion, the QDs synthesized with L-cystein have effects on the growth of mung beans. However, it is necessary to do more experiments to confirm the mechanism of the toxicity effect of QDs on plants.

  8. Multijunction InGaAs thermophotovoltaic power converter

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven

    1996-01-01

    The experimental performance of a multijunction monolithic lattice-matched 0.74 eV InGaAs thermophotovoltaic (TPV) power converter under 980 C blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 cm(exp 2) chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. The power efficiency of this TPV device is 16% for that part of the blackbody spectrum above the material bandgap. The device is shown to deliver about 1 watt of output power when driven with enough light. This is the first report of such a multijunction TPV device. This is not a traditional tandem cell in which the junctions are stacked vertically. Eight 1 mm long by 1 cm wide junctions are laterally connected across the device area. This multijunction design has the potential for lower I(exp 2)R power loss since the smaller PN junction area limits the current to one eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(exp 2)R loss, analogous to the way power utilities avoid I(exp 2)R loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

  9. InGaAs triangular barrier photodiodes for high-responsivity detection of near-infrared light

    NASA Astrophysics Data System (ADS)

    Sugimura, Kazuya; Ohmori, Masato; Noda, Takeshi; Kojima, Tomoya; Kado, Sakunari; Vitushinskiy, Pavel; Iwata, Naotaka; Sakaki, Hiroyuki

    2016-06-01

    InGaAs triangular barrier (TB) structures of various barrier thicknesses have been formed on InP substrates. With them, we have fabricated TB photodiodes that yield a very high responsivity of 2.3 × 104 A/W at 100 K for the 1312 nm light of 320 fW power. By passivating the diode surface with polyimide, the dark current has been markedly reduced. Diodes with thicker barriers show higher sensitivity and responsivity, reflecting the enhancement of the barrier lowering effect by photogenerated holes.

  10. Room temperature green to red electroluminescence from (Al,Ga)As/GaP QDs and QWs

    NASA Astrophysics Data System (ADS)

    Golz, Christian; Dadgostar, Shabnam; Masselink, W. Ted; Hatami, Fariba

    2016-03-01

    We present the growth, fabrication, and characterization of light-emitting diodes based on (Al,Ga)As quantum wells and dots embedded in a p-n GaP structure. Samples were grown on Sulphur-doped GaP (001) substrate using gas-source molecular beam epitaxy. The structures include either GaAs quantum structures with nominal coverage between 1.2 and 3.6 monolayers or Al0.3Ga0.7As quantum wells. For structures with GaAs layer thicker than 1.5 monolayers the 3.6% lattice mismatch in the materials system results in formation of quantum dots via Stranski-Krastanow growth mode with areal density of about 8×1010 cm-2. The atomic-force and transmission-electron microscopy show that with increasing coverage of GaAs from 1.8 to 3.6 monolayers the average lateral size and height of dots change in the range of 17-34 nm and 0.9-2 nm, respectively. The diode structures emit light from the red to the green spectral range up to room temperature. The GaAs/GaP QDs show electroluminescence between 1.8 eV and 2 eV, whereas the Al0.3Ga0.7As quantum wells emit light between 2 eV and 2.2 eV.

  11. Multijunction InGaAs thermophotovoltaic power converter

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven; Parodos, Themis

    1995-01-01

    The experimental performance of a multijunction monolithic In(0.53)Ga(0. 47)As power converter under blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 sq cm chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. This is the first report of such a multijunction TPV. This is not a traditional tandem cell in which the junctions are stacked vertically. The junctions are each about 1mm long by 1 cm wide and are laterally connected across the 1 sq cm device area. This multijunction design has the potential for lower I(sup 2)R power loss since the smaller PN junction area limits the current to one-eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(sup 2)R loss, analogous to the way power utilities avoid I(sup 2)P loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

  12. Multijunction InGaAs thermophotovoltaic power converter

    NASA Astrophysics Data System (ADS)

    Wojtczuk, Steven; Parodos, Themis

    1995-10-01

    The experimental performance of a multijunction monolithic In(0.53)Ga(0. 47)As power converter under blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 sq cm chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. This is the first report of such a multijunction TPV. This is not a traditional tandem cell in which the junctions are stacked vertically. The junctions are each about 1mm long by 1 cm wide and are laterally connected across the 1 sq cm device area. This multijunction design has the potential for lower I(sup 2)R power loss since the smaller PN junction area limits the current to one-eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(sup 2)R loss, analogous to the way power utilities avoid I(sup 2)P loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

  13. Numerical modeling of extended short wave infrared InGaAs focal plane arrays

    NASA Astrophysics Data System (ADS)

    Glasmann, Andreu; Wen, Hanqing; Bellotti, Enrico

    2016-05-01

    Indium gallium arsenide (In1-xGaxAs) is an ideal material choice for short wave infrared (SWIR) imaging due to its low dark current and excellent collection efficiency. By increasing the indium composition from 53% to 83%, it is possible to decrease the energy gap from 0.74 eV to 0.47 eV and consequently increase the cutoff wavelength from 1.7 μm to 2.63 μm for extended short wavelength (ESWIR) sensing. In this work, we apply our well-established numerical modeling methodology to the ESWIR InGaAs system to determine the intrinsic performance of pixel detectors. Furthermore, we investigate the effects of different buffer/cap materials. To accomplish this, we have developed composition-dependent models for In1-xGaxAs, In1-xAlxAs, and InAs1-y Py. Using a Green's function formalism, we calculate the intrinsic recombination coefficients (Auger, radiative) to model the diffusion-limited behavior of the absorbing layer under ideal conditions. Our simulations indicate that, for a given total thickness of the buffer and absorbing layer, structures utilizing a linearly graded small-gap InGaAs buffer will produce two orders of magnitude more dark current than those with a wide gap, such as InAlAs or InAsP. Furthermore, when compared with experimental results for ESWIR photodiodes and arrays, we estimate that there is still a 1.5x magnitude of reduction in dark current before reaching diffusion-limited behavior.

  14. Study on 512×128 pixels InGaAs near infrared focal plane arrays

    NASA Astrophysics Data System (ADS)

    Li, Xue; Tang, Hengjing; Huang, Songlei; Shao, Xiumei; Li, Tao; Huang, Zhangcheng; Gong, Haimei

    2014-10-01

    It is well known that In0.53Ga0.47As epitaxial material is lattice-matched to InP substrate corresponding to the wavelength from 0.9μm to 1.7μm, which results to high quality material and good device characteristics at room temperature. In order to develop the near infrared multi-spectral imaging, 512×128 pixels InGaAs Near Infrared Focal Plane Arrays (FPAs) were studied. The n-InP/i-InGaAs/n-InP double hereto-structure epitaxial material was grown by MBE. The 512×128 back-illuminated planar InGaAs detector arrays were fabricated, including the improvement of passivation film, by grooving the diffusion masking layer, the P type electrode layer, In bump condition and so on. The photo-sensitive region has the diffusion area of 23×23μm2 and pixel pitch of 30×30μm2 . The 512×128 detector arrays were individually hybridized on readout integrated circuit(ROIC) by Indium bump based on flip-chip process to make focal plane arrays (FPAs). The ROIC is based on a capacitive trans-impedance amplifier with correlated double sampling and integrated while readout (IWR) mode with high readout velocity of every pixel resulting in low readout noise and high frame frequency. The average peak detectivity and the response non-uniformity of the FPAs are 1.63×1012 cmHz1/2/W and 5.9%, respectively. The power dissipation and frame frequency of the FPAs are about 180mW and 400Hz, respectively.

  15. Passively Q-switched Yb3+:YCa4O(BO3)3 laser with InGaAs quantum wells as saturable absorbers

    NASA Astrophysics Data System (ADS)

    Liang, H. C.; Huang, J. Y.; Su, K. W.; Lai, H. C.; Chen, Y. F.; Huang, K. F.; Zhang, H. J.; Wang, J. Y.; Jiang, M. H.

    2007-04-01

    A diode-pumped Yb:YCOB laser at 1086 nm is passively Q switched by using InGaAs quantum wells as saturable absorbers and utilizing the Bragg mirror structure as an output coupler. With an absorbed pump power of 9.2 W the laser produces pulses of 100 ms duration with average pulse energy of as much as 165 μJ at a pulse repetition rate of 7 kHz.

  16. Passively Q-switched Yb3+:YCa4O(BO3)3 laser with InGaAs quantum wells as saturable absorbers.

    PubMed

    Liang, H C; Huang, J Y; Su, K W; Lai, H C; Chen, Y F; Huang, K F; Zhang, H J; Wang, J Y; Jiang, M H

    2007-04-20

    A diode-pumped Yb:YCOB laser at 1086 nm is passively Q switched by using InGaAs quantum wells as saturable absorbers and utilizing the Bragg mirror structure as an output coupler. With an absorbed pump power of 9.2 W the laser produces pulses of 100 ms duration with average pulse energy of as much as 165 microJ at a pulse repetition rate of 7 kHz.

  17. Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials

    NASA Astrophysics Data System (ADS)

    Krivec, Sabina; Poljak, Mirko; Suligoj, Tomislav

    2016-01-01

    Electron mobility is investigated in sub-20 nm-thick InGaAs channels, sandwiched between different gate oxides (SiO2, Al2O3, HfO2) and InP as substrate, using physics-based numerical modeling. Effects of body thickness downscaling to 2 nm, different gate oxides, and surface orientation [(1 0 0) and (1 1 1)] are examined by including all electron valleys and all relevant scattering mechanisms. We report that ultra-thin (1 1 1) Al2O3-InGaAs-InP devices offer greater electron mobility than (1 0 0) devices even in the extremely-thin channels. Furthermore, ultra-thin (1 0 0) InGaAs devices outperform SOI in terms of electron mobility for body thicknesses above ∼4 nm, while (1 1 1) InGaAs channels are superior to SOI for all body thickness values above ∼3 nm. The study of different gate oxides indicates that HfO2 is the optimum gate dielectric regardless of device orientation, offering a mobility improvement of up to 124% for (1 1 1) and 149% for (1 0 0) surface orientation, when compared to the initial Al2O3-InGaAs-InP structure. The (1 1 1) orientation offers improvement over (1 0 0) device irrespective of the body thickness and gate oxide material, with the highest difference reported for SiO2, followed by Al2O3 and HfO2.

  18. Suppressed blinking behavior of CdSe/CdS QDs by polymer coating

    NASA Astrophysics Data System (ADS)

    Zhang, Aidi; Bian, Yannan; Wang, Jinjie; Chen, Kuiyong; Dong, Chaoqing; Ren, Jicun

    2016-02-01

    Semiconductor quantum dots (QDs) are very important fluorescent nanocrystals with excellent optical properties. However, QDs, at the single-particle level, show severe fluorescence intermittency (or blinking) on a wide time scale from milliseconds to minutes, which limits certain optical and biological applications. Generally, blinking behavior of QDs strongly depends on their surface state and surrounding environment. Therefore, current blinking suppression approaches are mostly focused on the introduction of an inorganic shell and organic small molecule compounds. In this study, we described a ``bottom up'' approach for the synthesis of CdSe/CdS/polymer core/shell/shell QDs via the in situ one-pot polymerization approach in order to control the blinking behavior of QDs. Three monomers (dithiothreitol (DTT), phenylenediamine (PDA), and hexamethylenediamine (HDA)) were respectively used to polymerize with hexachlorocyclotriphosphazene (HCCP), and then the polyphosphazene polymers were obtained with cyclotriphosphazene as the basic macromolecular backbone. By regulating the molar ratios of the activated comonomers, we can control the blinking behavior of CdSe/CdS/polymer QDs. Under the optimal conditions, the percentage of ``non-blinking'' CdSe/CdS/polymer QDs (the ``on time'' fraction > 99% of the overall observation time) was up to 78%. The suppression mechanism was attributed to the efficient passivation of QD surface traps by the sulfhydryl or phenyl groups in the polyphosphazene polymers.Semiconductor quantum dots (QDs) are very important fluorescent nanocrystals with excellent optical properties. However, QDs, at the single-particle level, show severe fluorescence intermittency (or blinking) on a wide time scale from milliseconds to minutes, which limits certain optical and biological applications. Generally, blinking behavior of QDs strongly depends on their surface state and surrounding environment. Therefore, current blinking suppression approaches are

  19. The Invasion and Reproductive Toxicity of QDs-Transferrin Bioconjugates on Preantral Follicle in vitro

    PubMed Central

    Xu, Gaixia; Lin, Suxia; Law, Wing-Cheung; Roy, Indrajit; Lin, Xiaotan; Mei, Shujiang; Ma, Hanwu; Chen, Siping; Niu, Hanben; Wang, Xiaomei

    2012-01-01

    The toxicity of QD has been extensively studied over the past decade. However, the potential toxicity of QDs impedes its use for clinical research. In this work, we established a preantral follicle in vitro culture system to investigate the effects of QD-Transferrin (QDs-Tf) bioconjugates on follicle development and oocyte maturation. The preantral follicles were cultured and exposed to CdTe/ZnTe QDs-Tf bioconjugates with various concentrations and the reproductive toxicity was assessed at different time points post-treatment. The invasion of QDs-Tf for oocytes was verified by laser scanning confocal microscope. Steroid production was evaluated by immunoassay. C-band Giemsa staining was performed to observe the chromosome abnormality of oocytes. The results showed that the QDs-Tf bioconjugates could permeate into granulosa cells and theca cells, but not into oocyte. There are no obvious changes of oocyte diameter, the mucification of cumulus-oocyte-complexes and the occurrence of aneulpoidy as compared with the control group. However, delay in the antrum formation and decrease in the ratio of oocytes with first polar body were observed in QDs-Tf-treated groups. The matured oocytes with first polar body decreased significantly by ~16% (from 79.6±10 % to 63±2.9 %) when the concentration of QDs-Tf bioconjugates exceeded 2.89 nmol·L-1 (P < 0.05). Our results implied that the CdTe/ZnTe QDs-Tf bioconjugates were reproductive toxic for follicle development, and thus also revealed that this in vitro culture system of preantral follicle is a highly sensitive tool for study on the reproductive toxicity of nanoparticles. PMID:22916073

  20. Surface roughness in InGaAs channels of high electron mobility transistors depending on the growth temperature: Strain induced or due to alloy decomposition

    NASA Astrophysics Data System (ADS)

    Peiró, F.; Cornet, A.; Morante, J. R.; Beck, M.; Py, M. A.

    1998-06-01

    InAlAs/InGaAs/InP based high electron mobility transistor devices have been structurally and electrically characterized, using transmission electron microscopy and Raman spectroscopy and measuring Hall mobilities. The InGaAs lattice matched channels, with an In molar fraction of 53%, grown at temperatures lower than 530 °C exhibit alloy decomposition driving an anisotropic InGaAs surface roughness oriented along [11¯0]. Conversely, lattice mismatched channels with an In molar fraction of 75% do not present this lateral decomposition but a strain induced roughness, with higher strength as the channel growth temperature increases beyond 490 °C. In both cases the presence of the roughness implies low and anisotropic Hall mobilities of the two dimensional electron gas.

  1. Indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs stacks during anneal at different ambient conditions

    SciTech Connect

    Krylov, Igor; Winter, Roy; Ritter, Dan; Eizenberg, Moshe

    2014-06-16

    Indium out-diffusion during anneal enhances leakage currents in metal/dielectric/InGaAs gate stacks. In this work, we study the influence of ambient conditions during anneal on indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs structures, prior to the gate metal deposition. Using X-ray photoemission spectroscopy and time of flight secondary ions mass spectrometry, we observed much lower indium concentrations in the Al{sub 2}O{sub 3} layer following vacuum and O{sub 2} anneals compared to forming gas or nitrogen anneals. The electrical characteristics of the Ni/Al{sub 2}O{sub 3}/InGaAs gate stack following these pre-metallization anneals as well as after subsequent post metallization anneals are presented. Possible explanations for the role of the annealing ambient conditions on indium out-diffusion are presented.

  2. Numerical study of the intrinsic recombination carriers lifetime in extended short-wavelength infrared detector materials: A comparison between InGaAs and HgCdTe

    NASA Astrophysics Data System (ADS)

    Wen, Hanqing; Bellotti, Enrico

    2016-05-01

    Intrinsic carrier lifetime due to radiative and Auger recombination in HgCdTe and strained InGaAs has been computed in the extended short-wavelength infrared (ESWIR) spectrum from 1.7 μm to 2.7 μm. Using the Green's function theory, both direct and phonon-assisted indirect Auger recombination rates as well as the radiative recombination rates are calculated for different cutoff wavelengths at 300 K with full band structures of the materials. In order to properly model the full band structures of strained InGaAs, an empirical pseudo-potential model for the alloy is fitted using the virtual crystal approximation with spin-orbit coupling included. The results showed that for InxGa1-xAs grown on InP substrate, the compressive strain, which presents in the film when the cutoff wavelength is longer than 1.7 μm, leads to decrease of Auger recombination rate and increase of radiative recombination rate. Since the dominant intrinsic recombination mechanism in this spectral range is radiative recombination, the overall intrinsic carrier lifetime in the strained InGaAs alloys is shorter than that in the relaxed material. When compared to the relaxed HgCdTe, both relaxed and compressively strained InGaAs alloys show shorter intrinsic carrier lifetime at the same cutoff wavelength in room temperature which confirms the potential advantage of HgCdTe as wide-band infrared detector material. While HgCdTe offers superior performance, ultimately the material of choice for ESWIR application will also depend on material quality and cost.

  3. InGaAs Detectors for Miniature Infrared Instruments

    NASA Technical Reports Server (NTRS)

    Krabach, T. N.; Staller, C.; Dejewski, S.; Cunningham, T.; Herring, M.; Fossum, E. R.

    1993-01-01

    In the past year, there has been substantial impetus for NASA to consider missions that are of relatively low cost as a trade off for a higher new mission launch rate. To maintain low mission cost, these missions will be of short duration and will use smaller launch vehicles (e.g. Pegasus). Consequently, very low volume, very low mass instrument (a.k.a. miniature instrument) payloads will be required. Furthermore, it is anticipated that the number of instruments flown on a particular mission will also be highly constrained; consequently increased instrument capability will also be desired. In the case of infrared instruments, focal planes typically require cooling to ensure high performance of the detectors, especially in the case of spectrometers where high D* is necessary. In this paper, we discuss the InGaAs detector technology and its potential.

  4. Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

    NASA Astrophysics Data System (ADS)

    Salas, R.; Guchhait, S.; McNicholas, K. M.; Sifferman, S. D.; Dasika, V. D.; Jung, D.; Krivoy, E. M.; Lee, M. L.; Bank, S. R.

    2016-05-01

    We explore the effects of surfactant-mediated epitaxy on the structural, electrical, and optical properties of fast metal-semiconductor superlattice photoconductors. Specifically, application of a bismuth flux during growth was found to significantly improve the properties of superlattices of LuAs nanoparticles embedded in In0.53Ga0.47As. These improvements are attributed to the enhanced structural quality of the overgrown InGaAs over the LuAs nanoparticles. The use of bismuth enabled a 30% increase in the number of monolayers of LuAs that could be deposited before the InGaAs overgrowth degraded. Dark resistivity increased by up to ˜15× while carrier mobility remained over 2300 cm2/V-s and carrier lifetimes were reduced by >2× at comparable levels of LuAs deposition. These findings demonstrate that surfactant-mediated epitaxy is a promising approach to enhance the properties of ultrafast photoconductors for terahert generation.

  5. Analysis and design of a low-noise ROIC for hybrid InGaAs infrared FPA

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Huang, SongLei; Huang, ZhangCheng; Fang, Jiaxiong

    2011-08-01

    The noises of CMOS readout integrated circuit (ROIC) for hybrid focal plane array (FPA) may occupy a great part of total noise in conditions that a low resistance or large capacitor detector interfacing with CTIA input stage. A novel low noise low power preamplifier with shared current-mirrors bias is designed. It has a gain of more than 90dB, which makes enough inject efficiency and low detector bias offset. Besides, it has strong detector bias control, because the shared current-mirror copies the DC current of the amplifier and generates the bias control voltage. A pixel level Correlated Double Sample circuits is designed in order to suppress the reset KTC noise and 1/f noise from preamplifier. An experimental chip of 30μm pitch 32×32 array was fabricated in standard 0.5μm CMOS mixed signal process. A few experimental structures are designed to study the allocating of layout area for low noise designing. The ROIC is bonded to an existing back-illuminated 30μm pitch InGaAs photodiode array with indium bump fabrication. The test of both the ROIC chips and InGaAs focal plane array is shown in this paper, and the contrast of different structure is shown and analyzed.

  6. Characterization of NIR InGaAs imager arrays for the JDEM SNAPmission concept

    SciTech Connect

    Seshadri, S.; Cole, M.D.; Hancock, B.; Ringold, P.; Wrigley, C.; Bonati, M.; Brown, M.G.; Schubnell, M.; Rahmer, G.; Guzman, D.; Figer,D.; Tarle, G.; Smith, R.M.; Bebek, C.

    2006-05-23

    We present the results of a study of the performance of InGaAs detectors conducted for the SuperNova Acceleration Probe (SNAP) dark energy mission concept. Low temperature data from a nominal 1.7um cut-off wavelength 1kx1k InGaAs photodiode array, hybridized to a Rockwell H1RG multiplexer suggest that InGaAs detector performance is comparable to those of existing 1.7um cut-off HgCdTe arrays. Advances in 1.7um HgCdTe dark current and noise initiated by the SNAP detector research and development program makes it the baseline detector technology for SNAP. However, the results presented herein suggest that existing InGaAs technology is a suitable alternative for other future astronomy applications.

  7. InGaAs quantum wells on wafer-bonded InP/GaAs substrates

    SciTech Connect

    Hayashi, S.; Sandhu, R.; Wojtowicz, M.; Chen, G.; Hicks, R.; Goorsky, M.S.

    2005-11-01

    Wafer bonding and hydrogen implantation exfoliation techniques have been used to fabricate a thin InP template layer on GaAs with intermediate silicon nitride bonding layers. This template layer was used to directly compare subsequent metal organic vapor phase epitaxial growth of InGaAs/InAlAs quantum-well structures on these wafer-bonded templates to growth on a standard InP substrate. Chemical mechanical polishing of the bonded structure and companion InP substrates was assessed. No effects from the coefficient of thermal mismatch are detected up to the growth temperature, and compositionally equivalent structures are grown on the wafer-bonded InP template and the bare InP substrate. However, after growth dislocation, loops can be identified in the InP template layer due to the ion implantation step. These defects incur a slight mosaic tilt but do not yield any crystalline defects in the epitaxial structure. Low-temperature photoluminescence measurements of the InGaAs grown on the template structure and the InP substrate exhibit near-band-edge luminescence on the same order; this indicates that ion implantation and exfoliation is a viable technique for the integration of III-V materials.

  8. Targeted near-IR QDs-loaded micelles for cancer therapy and imaging.

    PubMed

    Nurunnabi, Md; Cho, Kwang Jae; Choi, Joon Sig; Huh, Kang Moo; Lee, Yong-kyu

    2010-07-01

    The use of water-soluble, functionalized quantum dots (QDs) that are highly stable against oxidation for biological and biomedical applications is currently one of the fastest growing fields of nanotechnology. Polymer-based nanoparticles are now widely used for drug delivery and targeted therapy. We modified the surface of near Infrared QDs by the solid dispersion method using PEG-PCDA and PCDA-Herceptin conjugates to demonstrate water-solubility and target-specific properties. Upon UV irradiation, QD cores located within nanoprobes were further stabilized by intramicellar cross-linking between neighboring PCDA-Herceptin moieties. These cross-linked nanoprobes showed higher stability and less toxicity. Near-IR QDs-loaded micelles were spherical with diameters of around 130-150 nm. The anti-tumor effect of near-IR QDs-loaded micelles against MDA-MB-231 tumors was remarkably better than that of control. Mice treated with the near-IR QDs-loaded micelles had a tumor volume of about 285 mm(3), indicating shrinkage in initial tumor volume and inhibition of tumor growth by 77.3% compared to that of control group (saline injection). In addition, near-IR QDs-loaded micelles were injected intravenously into tumor-bearing nude mice for simultaneous tumor therapy and imaging. We observed that the targeted near-IR QDs-loaded micelles distributed rapidly throughout the animal body including the tumor in real time. These multi-functional nanoprobes could therefore be used for both active and passive targeting, imaging and treatment of cancers in the early stage. PMID:20409581

  9. Fast imaging of eccrine latent fingerprints with nontoxic Mn-doped ZnS QDs.

    PubMed

    Xu, Chaoying; Zhou, Ronghui; He, Wenwei; Wu, Lan; Wu, Peng; Hou, Xiandeng

    2014-04-01

    Fingerprints are unique characteristics of an individual, and their imaging and recognition is a top-priority task in forensic science. Fast LFP (latent fingerprint) acquirement can greatly help policemen in screening the potential criminal scenes and capturing fingerprint clues. Of the two major latent fingerprints (LFP), eccrine is expected to be more representative than sebaceous in LFP identification. Here we explored the heavy metal-free Mn-doped ZnS quantum dots (QDs) as a new imaging moiety for eccrine LFPs. To study the effects of different ligands on the LFP image quality, we prepared Mn-doped ZnS QDs with various surface-capping ligands using QDs synthesized in high-temperature organic media as starting material. The orange fluorescence emission from Mn-doped ZnS QDs clearly revealed the optical images of eccrine LFPs. Interestingly, N-acetyl-cysteine-capped Mn-doped ZnS QDs could stain the eccrine LFPs in as fast as 5 s. Meanwhile, the levels 2 and 3 substructures of the fingerprints could also be simultaneously and clearly identified. While in the absence of QDs or without rubbing and stamping the finger onto foil, no fluorescent fingerprint images could be visualized. Besides fresh fingerprint, aged (5, 10, and 50 days), incomplete eccrine LFPs could also be successfully stained with N-acetyl-cysteine-capped Mn-doped ZnS QDs, demonstrating the analytical potential of this method in real world applications. The method was also robust for imaging of eccrine LFPs on a series of nonporous surfaces, such as aluminum foil, compact discs, glass, and black plastic bags.

  10. Electrical and optical performance characteristics of 0.74eV p/n InGaAs monolithic interconnected modules

    SciTech Connect

    Wilt, D.M.; Weizer, V.G.; Fatemi, N.S.; Jenkins, P.P.; Hoffman, R.W. Jr.; Jain, R.K.; Murray, C.S.; Riley, D.R.

    1997-06-01

    There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 cm{sup 2} device consisting of eight series interconnected cells. MIM devices, produced from 0.74 eV InGaAs, have demonstrated V{sub oc} = 3.2 volts, J{sub sc} = 70 mA/cm{sup 2} and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (> 2 {micro}m) of these devices indicate a reflectivity of > 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

  11. Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Fatemi, Navid S.; Jenkins, Phillip P.; Weizer, Victor G.; Hoffman, Richard W., Jr.; Jain, Raj K.; Murray, Christopher S.; Riley, David R.

    1997-01-01

    There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

  12. Bandgap Engineering of InP QDs Through Shell Thickness and Composition

    SciTech Connect

    Dennis, Allison M.; Mangum, Benjamin D.; Piryatinski, Andrei; Park, Young-Shin; Htoon, Han; Hollingsworth, Jennifer A.

    2012-06-21

    Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

  13. Visualization of hormone binding proteins in vivo based on Mn-doped CdTe QDs

    NASA Astrophysics Data System (ADS)

    Liu, Fang fei; Yu, Ying; Lin, Bi xia; Hu, Xiao gang; Cao, Yu juan; Wu, Jian zhong

    2014-10-01

    Daminozide (B9) is a growth inhibitor with important regulatory roles in plant growth and development. Locating and quantifying B9-binding proteins in plant tissues will assist in investigating the mechanism behind the signal transduction of B9. In this study, red fluorescent Mn-doped CdTe quantum dots (CdTeMn QDs) were synthesized by a high-temperature hydrothermal process. Since CdTeMn QDs possess a maximum fluorescence emission peak at 610 nm, their fluorescence properties are more stable than those of CdTe QDs. A B9-CdTeMn probe was synthesized by coupling B9 with CdTeMn QDs. The fluorescence intensity of the probe is double that of CdTeMn QDs; its fluorescence stability is also superior under different ambient conditions. The probe retains the biological activity of B9 and is unaffected by interference from the green fluorescent protein present in plants. Therefore, we used this probe to label B9-binding proteins selectively in root tissue sections of mung bean seedlings. These proteins were observed predominantly on the surfaces of the cell membranes of the cortex and epidermal parenchyma.

  14. Nanostructured TiO2 Films Attached CdSe QDs Toward Enhanced Photoelectrochemical Performance.

    PubMed

    Du, Yingying; Yang, Ping; Liu, Yunshi; Zhao, Jie; He, Haiyan; Miao, Yanping

    2016-06-01

    TiO2 films consisted of small nanoparticles were fabricated via a spinning coating method on fluorine doped in tin oxide (FTO) slide glass. After calcination, the films were subsequently sensitized by CdSe quantum dots (QDs) using mercaptopropionic acid (MPA) as a bifunctional surface modifier. Upon UV light irradiation, CdSe QDs inject electrons into TiO2 nanoparticles, thus resulting in the generation of photocurrent in QD-sensitized solar cell. The results indicate that TiO2 films sensitized by CdSe QDs have achieved 1.5-fold enhancement in photocurrent compared with pure TiO2 films, indicating that CdSe QDs can improve the photocurrent by promoting the separation of photoinduced charge carriers. In addition, the photocurrent enhances as the thickness of TiO2 films increased. Such improved photoelectrochemical performance is ascribed to the basis of improved interfacial charge transport of the TiO2-CdSe composite films. Combining QDs on TiO2 thin films is a promising and effective way to enhance the photoelectrochemical performance, which is important in QD-sensitized solar cell application. PMID:27427714

  15. Lattice-engineered MBE growth of high-indium mole fraction InGaAs for low cost MMICs and (1.3--1.55 {micro}m) OEICs

    SciTech Connect

    Childs, T.T.; Sokolov, V.; Sullivan, C.T.

    1997-11-01

    Using molecular beam epitaxy (MBE) and lattice engineering techniques, the feasibility of combining photonic devices applicable to the 1.3 to 1.55 {micro}m wavelength range and monolithic microwave (or mm-wave) integrated circuits (MMICs) on GaAs is demonstrated. A key factor in the MBE growth is incorporation of an InGaAs active layer having an indium arsenide mole fraction of 0.35 or greater and its lattice compatibility with the underlying semi-insulating GaAs substrate. The InGaAs layer used for the photonic devices, can also serve as the active channel for the high electron mobility transistors (HEMTs) for application in MMICs. Several examples of active and passive photonic devices grown by MBE are presented including an optical ridge waveguide, and a photodetector for detection of light in the 1.3 {micro}m range. The material structure includes a 3-layer AlGaAs/GaAs/AlGaAs optical waveguide and a thin InGaAs absorbing layer situated directly above the optical waveguide. Metal-semiconductor-metal (MSM) photodetectors are formed on the top surface of the InGaAs layer for collection of the photo-induced carriers. The optical ridge waveguide is designed for lateral incidence of the light to enhance the MSM photodetector responsivity. Initial measurements on the optical waveguide and photodetector are presented.

  16. CdSe/ZnS core-shell QDs: Synthesis and investigating optical properties

    NASA Astrophysics Data System (ADS)

    Molaei, M.; Sarhani, F.; Bardsiri, F. Salari; Karmipour, M.

    2016-03-01

    In this work, CdSe quantum dots (QDs) were synthesized using a microwave activated reaction between NaHSe and CdSO4 in the presence of thioglycolic acid (TGA) as capping molecule and then using a one-pot method, ZnS shell was grown subsequently around CdSe cores by a room temperature reaction based on the photo-sensitivity of Na2S2O3 dissociation. Synthesized QDs were characterized by means of X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), UV-visible (UV-Vis) and photoluminescence (PL) spectroscopy. All these analyses confirmed the formation of CdSe QDs and successful growth of ZnS shell around CdSe cores.

  17. Exploring the wavelength range of InP/AlGaInP QDs and application to dual-state lasing

    NASA Astrophysics Data System (ADS)

    Shutts, Samuel; Elliott, Stella N.; Smowton, Peter M.; Krysa, Andrey B.

    2015-04-01

    We explore the accessible wavelength range offered by InP/AlGaInP quantum dots (QD)s grown by metal-organic vapour phase epitaxy and explain how changes in growth temperature and wafer design can be used to influence the transition energy of the dot states and improve the performance of edge-emitting lasers. The self assembly growth method of these structures creates a multi-modal distribution of inhomogeneously broadened dot sizes, and via the effects of state-filling, allows access to a large range of lasing wavelengths. By characterising the optical properties of these dots, we have designed and demonstrated dual-wavelength lasers which operate at various difference-wavelengths between 8 and 63 nm. We show that the nature of QDs allows the difference-wavelength to be tuned by altering the operating temperature at a rate of up to 0.12 nm K-1 and we investigate the factors affecting intensity stability of the competing modes.

  18. Comparison of Ge, InGaAs p-n junction solar cell

    NASA Astrophysics Data System (ADS)

    Korun, M.; Navruz, T. S.

    2016-04-01

    In this paper, the effect of material parameters on the efficiency of Ge and InGaAs p-n junction solar cells which are most commonly used as the sub-cell of multi-junction solar cells are investigated and the results due to these two cells are compared. The efficiency of Ge (EG =0.67 eV) solar cell which is easy to manufacture and inexpensive in cost, is compared with the efficiency of InGaAs (EG =0.74 eV) solar cell which is coming with drawback of high production difficulties and cost. The theoretical efficiency limit of Ge and InGaAs solar cells with optimum thickness were determined by using detailed balance model under one sun AM1.5 illumination. Since the band gap values of two cells are close to each other, approximate detailed balance efficiency limits of 16% for InGaAs and 14% for Ge are obtained. When drift-diffusion model is used and the thicknesses and doping concentrations are optimized, the maximum efficiency values are calculated as 13% for InGaAs and 9% for Ge solar cell. For each solar cell external quantum efficiency curves due to wavelength are also sketched and compared.

  19. Erythorbic acid promoted formation of CdS QDs in a tube-in-tube micro-channel reactor

    SciTech Connect

    Liang, Yan; Tan, Jiawei; Wang, Jiexin; Chen, Jianfeng; Sun, Baochang; Shao, Lei

    2014-12-15

    Erythorbic acid assistant synthesis of CdS quantum dots (QDs) was conducted by homogeneous mixing of two continuous liquids in a high-throughput microporous tube-in-tube micro-channel reactor (MTMCR) at room temperature. The effects of the micropore size of the MTMCR, liquid flow rate, mixing time and reactant concentration on the size and size distribution of CdS QDs were investigated. It was found that the size and size distribution of CdS QDs could be tuned in the MTMCR. A combination of erythorbic acid promoted formation technique with the MTMCR may be a promising pathway for controllable mass production of QDs.

  20. 1.58 {mu}m InGaAs quantum well laser on GaAs

    SciTech Connect

    Taangring, I.; Ni, H. Q.; Wu, B. P.; Wu, D. H.; Xiong, Y. H.; Huang, S. S.; Niu, Z. C.; Wang, S. M.; Lai, Z. H.; Larsson, A.

    2007-11-26

    We demonstrate the 1.58 {mu}m emission at room temperature from a metamorphic In{sub 0.6}Ga{sub 0.4}As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In{sub 0.32}Ga{sub 0.68}As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250x50 {mu}m{sup 2} broad area laser, a minimum threshold current density of 490 A/cm{sup 2} was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 {mu}m GaAs-based lasers.

  1. Indium and gallium diffusion through zirconia in the TiN/ZrO{sub 2}/InGaAs stack

    SciTech Connect

    Ceballos-Sanchez, O.; Martinez, E.; Guedj, C.; Veillerot, M.; Herrera-Gomez, A.

    2015-06-01

    Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS) was applied to the TiN/ZrO{sub 2}/InGaAs stack to assess its thermal stability. Through a robust ARXPS analysis, it was possible to observe subtle effects such as the thermally induced diffusion of substrate atomic species (In and Ga) through the dielectric layer. The detailed characterization of the film structure allowed for assessing the depth profiles of the diffused atomic species by means of the scenarios-method. Since the quantification for the amount of diffused material was done at different temperatures, it was possible to obtain an approximate value of the activation energy for the diffusion of indium through zirconia. The result is very similar to the previously reported values for indium diffusion through alumina and through hafnia.

  2. The influence of sunlight irradiation on the characteristics of InGaAs detectors

    NASA Astrophysics Data System (ADS)

    Shao, Xiumei; Zhu, Yaoming; Li, Xue; Tang, Hengjing; Li, Tao; Gong, Haimei

    2014-10-01

    InGaAs ternary compound is suitable for detector applications in the shortwave infrared (SWIR) band. Due to the advantages of good stability, low cooling requirements and high detectivity, InGaAs detectors have been applied widely in the space remote sensing area. However, InGaAs detectors would be affected by strong sunlight direct irradiation in space application. In this paper, a mesa-type InGaAs detector with large sensitive area of diameter 5mm was designed based on InP/In0.53Ga0.47As/InP epitaxial material, which is lattice-matched to InP substrate. The InGaAs detectors were fabricated by ICP etching, and packaged in a Kovar shell. The relative spectral response is in the range of 0.9μm to 1.7μm. The mechanism of the sunlight direct irradiation on InGaAs detector performance was studied. The sunlight were focalized by lens and irradiated directly on the detector. A piece of epitaxial material was investigated at the same time which was cleaved from a 2 inch wafer, same to the detector material. The real time testing was taken out to observe the output signal of the detector. After the irradiation experiment, the I-V curves and the relative response were tested immediately. The dark current of the detector increased temporarily, but come back to the original level after 24 hours. The response spectrum was nearly not affected. The XRD testing of the epitaxial material sample was carried out before and after sunlight direct irradiation. The sunlight irradiation causes thermal stress degradation. The thermal electrons were produced by the absorption of a great deal of visible light, leading to local enhancement of temperature and the lattice degeneration of the material.

  3. Characterization of extrinsic resistances in temperature behaviour modelling of InGaAs MODFETs

    NASA Astrophysics Data System (ADS)

    González, B.; Hernández, A.; García, J.; del Pino, F. J.; Sendra, J. R.; Nunez, A.

    2004-05-01

    This work analyses the dc response of InGaAs channel modulation-doped field-effect transistors, when varying temperature from 300 to 400 K. An analytical model for the intrinsic drain current is derived from previous work, carried out for a similar AlGaAs channel device, in order to show explicitly the temperature dependence. The extrinsic resistances are numerically evaluated and added in a straightforward form to the model. Experimental output characteristics at different temperatures of an InGaAs MODFET, in static operation, are compared with those offered by the resulting extrinsic model and numerical simulations. Computed relative errors are around 10%.

  4. Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires.

    PubMed

    Speckbacher, Maximilian; Treu, Julian; Whittles, Thomas J; Linhart, Wojciech M; Xu, Xiaomo; Saller, Kai; Dhanak, Vinod R; Abstreiter, Gerhard; Finley, Jonathan J; Veal, Tim D; Koblmüller, Gregor

    2016-08-10

    Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs), an observation that is commonly attributed to the presence of surface states and their modification of the electronic band structure. Although the effects of the exposed, bare NW surface have been widely studied with respect to charge carrier transport and optical properties, the underlying electronic band structure, Fermi level pinning, and surface band bending profiles are not well explored. Here, we directly and quantitatively assess the Fermi level pinning at the surfaces of composition-tunable, intrinsically n-type InGaAs NWs, as one of the prominent, technologically most relevant NW systems, by using correlated photoluminescence (PL) and X-ray photoemission spectroscopy (XPS). From the PL spectral response, we reveal two dominant radiative recombination pathways, that is, direct near-band edge transitions and red-shifted, spatially indirect transitions induced by surface band bending. The separation of their relative transition energies changes with alloy composition by up to more than ∼40 meV and represent a direct measure for the amount of surface band bending. We further extract quantitatively the Fermi level to surface valence band maximum separation using XPS, and directly verify a composition-dependent transition from downward to upward band bending (surface electron accumulation to depletion) with increasing Ga-content x(Ga) at a crossover near x(Ga) ∼ 0.2. Core level spectra further demonstrate the nature of extrinsic surface states being caused by In-rich suboxides arising from the native oxide layer at the InGaAs NW surface. PMID:27458736

  5. Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires.

    PubMed

    Speckbacher, Maximilian; Treu, Julian; Whittles, Thomas J; Linhart, Wojciech M; Xu, Xiaomo; Saller, Kai; Dhanak, Vinod R; Abstreiter, Gerhard; Finley, Jonathan J; Veal, Tim D; Koblmüller, Gregor

    2016-08-10

    Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs), an observation that is commonly attributed to the presence of surface states and their modification of the electronic band structure. Although the effects of the exposed, bare NW surface have been widely studied with respect to charge carrier transport and optical properties, the underlying electronic band structure, Fermi level pinning, and surface band bending profiles are not well explored. Here, we directly and quantitatively assess the Fermi level pinning at the surfaces of composition-tunable, intrinsically n-type InGaAs NWs, as one of the prominent, technologically most relevant NW systems, by using correlated photoluminescence (PL) and X-ray photoemission spectroscopy (XPS). From the PL spectral response, we reveal two dominant radiative recombination pathways, that is, direct near-band edge transitions and red-shifted, spatially indirect transitions induced by surface band bending. The separation of their relative transition energies changes with alloy composition by up to more than ∼40 meV and represent a direct measure for the amount of surface band bending. We further extract quantitatively the Fermi level to surface valence band maximum separation using XPS, and directly verify a composition-dependent transition from downward to upward band bending (surface electron accumulation to depletion) with increasing Ga-content x(Ga) at a crossover near x(Ga) ∼ 0.2. Core level spectra further demonstrate the nature of extrinsic surface states being caused by In-rich suboxides arising from the native oxide layer at the InGaAs NW surface.

  6. Liver Toxicity of Cadmium Telluride Quantum Dots (CdTe QDs) Due to Oxidative Stress in Vitro and in Vivo

    PubMed Central

    Zhang, Ting; Hu, Yuanyuan; Tang, Meng; Kong, Lu; Ying, Jiali; Wu, Tianshu; Xue, Yuying; Pu, Yuepu

    2015-01-01

    With the applications of quantum dots (QDs) expanding, many studies have described the potential adverse effects of QDs, yet little attention has been paid to potential toxicity of QDs in the liver. The aim of this study was to investigate the effects of cadmium telluride (CdTe) QDs in mice and murine hepatoma cells alpha mouse liver 12 (AML 12). CdTe QDs administration significantly increased the level of lipid peroxides marker malondialdehyde (MDA) in the livers of treated mice. Furthermore, CdTe QDs caused cytotoxicity in AML 12 cells in a dose- and time-dependent manner, which was likely mediated through the generation of reactive oxygen species (ROS) and the induction of apoptosis. An increase in ROS generation with a concomitant increase in the gene expression of the tumor suppressor gene p53, the pro-apoptotic gene Bcl-2 and a decrease in the anti-apoptosis gene Bax, suggested that a mitochondria mediated pathway was involved in CdTe QDs’ induced apoptosis. Finally, we showed that NF-E2-related factor 2 (Nrf2) deficiency blocked induced oxidative stress to protect cells from injury induced by CdTe QDs. These findings provide insights into the regulatory mechanisms involved in the activation of Nrf2 signaling that confers protection against CdTe QDs-induced apoptosis in hepatocytes. PMID:26404244

  7. Systematic investigation of the influence of CdTe QDs size on the toxic interaction with human serum albumin by fluorescence quenching method

    NASA Astrophysics Data System (ADS)

    Xiao, Jianbo; Bai, Yalong; Wang, Yuanfeng; Chen, Jingwen; Wei, Xinlin

    2010-06-01

    Quantum dots (QDs) are complementary tools to the organic fluorescent dyes used in biological system. Investigation of QDs biological toxicity has attracted great interest for their depth application. Here, the fluorescence quenching method was used to investigate the influence of CdTe QDs size on the toxic interaction with human serum albumin (HSA). Two aqueous-compatible CdTe QDs with maximum emission of 535 nm (green-emitting QDs, G-QDs, 2.04 nm) and 654 nm (red-emitting QDs, R-QDs, 3.79 nm) were tested. The fluorescence quenching results indicated that the quenching effect of QDs on HSA fluorescence depended on the size and the nature of quenching is not dynamic but probably static, resulting in forming QDs-HSA complexes. The binding constants and the number of binding sites between R-QDs and HSA were higher than those of G-QDs. The results illustrated that the size of CdTe quantum dots affected the affinity for HSA and the increasing size of QDs enhanced the affinity for HSA. The values of lg Ka are proportional to the number of binding sites ( n). This result confirms the method used here is suitable to study the toxic interaction between QDs and HSA.

  8. Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

    2000-01-01

    Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

  9. Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

    SciTech Connect

    Bracher, Gregor; Schraml, Konrad; Blauth, Mäx; Wierzbowski, Jakob; López, Nicolás Coca; Bichler, Max; Müller, Kai; Finley, Jonathan J.; Kaniber, Michael

    2014-07-21

    We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to ∼10 nm. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured by the quantum dots ∼25 nm below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from 5 μm to 1 μm, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length L{sub i} is varied. A splitting ratio of 50:50 is observed for L{sub i}∼9±1 μm and 1 μm wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters.

  10. Ultrafast spin tunneling and injection in coupled nanostructures of InGaAs quantum dots and quantum well

    SciTech Connect

    Yang, Xiao-Jie Kiba, Takayuki; Yamamura, Takafumi; Takayama, Junichi; Subagyo, Agus; Sueoka, Kazuhisa; Murayama, Akihiro

    2014-01-06

    We investigate the electron-spin injection dynamics via tunneling from an In{sub 0.1}Ga{sub 0.9}As quantum well (QW) to In{sub 0.5}Ga{sub 0.5}As quantum dots (QDs) in coupled QW-QDs nanostructures. These coupled nanostructures demonstrate ultrafast (5 to 20 ps) spin injection into the QDs. The degree of spin polarization up to 45% is obtained in the QDs after the injection, essentially depending on the injection time. The spin injection and conservation are enhanced with thinner barriers due to the stronger electronic coupling between the QW and QDs.

  11. Size dependence of electron spin dephasing in InGaAs quantum dots

    SciTech Connect

    Huang, Y. Q.; Puttisong, Y.; Buyanova, I. A.; Chen, W. M.; Yang, X. J.; Subagyo, A.; Sueoka, K.; Murayama, A.

    2015-03-02

    We investigate ensemble electron spin dephasing in self-assembled InGaAs/GaAs quantum dots (QDs) of different lateral sizes by employing optical Hanle measurements. Using low excitation power, we are able to obtain a spin dephasing time T{sub 2}{sup *} (in the order of ns) of the resident electron after recombination of negative trions in the QDs. We show that T{sub 2}{sup *} is determined by the hyperfine field arising from the frozen fluctuation of nuclear spins, which scales with the size of QDs following the Merkulov-Efros-Rosen model. This scaling no longer holds in large QDs, most likely due to a breakdown in the lateral electron confinement.

  12. Photosensitization of CdSe/ZnS QDs and reliability of assays for reactive oxygen species production

    NASA Astrophysics Data System (ADS)

    Cooper, Daniel R.; Dimitrijevic, Nada M.; Nadeau, Jay L.

    2010-01-01

    CdSe/ZnS quantum dots (QDs) conjugated to biomolecules that can act as electron donors are said to be ``photosensitized'': that is, they are able to oxidize or reduce molecules whose redox potential lies inside their band edges, in particular molecular oxygen and water. This leads to the formation of reactive oxygen species (ROS) and phototoxicity. In this work, we quantify the generation of different forms of ROS from as-synthesized QDs in toluene; water-solubilized, unconjugated QDs; QDs conjugated to the neurotransmitter dopamine; and dopamine alone. Results of indirect fluorescent ROS assays, both in solution and inside cells, are compared with those of spin-trap electron paramagnetic resonance spectroscopy (EPR). The effect of these particles on the metabolism of mammalian cells is shown to be dependent upon light exposure and proportional to the amount of ROS generated.

  13. Photosensitization of CdSe/ZnS QDs and reliability of assays for reactive oxygen species production.

    PubMed

    Cooper, Daniel R; Dimitrijevic, Nada M; Nadeau, Jay L

    2010-01-01

    CdSe/ZnS quantum dots (QDs) conjugated to biomolecules that can act as electron donors are said to be "photosensitized": that is, they are able to oxidize or reduce molecules whose redox potential lies inside their band edges, in particular molecular oxygen and water. This leads to the formation of reactive oxygen species (ROS) and phototoxicity. In this work, we quantify the generation of different forms of ROS from as-synthesized QDs in toluene; water-solubilized, unconjugated QDs; QDs conjugated to the neurotransmitter dopamine; and dopamine alone. Results of indirect fluorescent ROS assays, both in solution and inside cells, are compared with those of spin-trap electron paramagnetic resonance spectroscopy (EPR). The effect of these particles on the metabolism of mammalian cells is shown to be dependent upon light exposure and proportional to the amount of ROS generated.

  14. Photosensitization of CdSe/ZnS QDs and reliability of assays for reactive oxygen species production.

    SciTech Connect

    Cooper, D. R.; Dimitrijevic, N. M.; Nadeau, J. L.; McGill Univ.

    2010-01-01

    CdSe/ZnS quantum dots (QDs) conjugated to biomolecules that can act as electron donors are said to be 'photosensitized': that is, they are able to oxidize or reduce molecules whose redox potential lies inside their band edges, in particular molecular oxygen and water. This leads to the formation of reactive oxygen species (ROS) and phototoxicity. In this work, we quantify the generation of different forms of ROS from as-synthesized QDs in toluene; water-solubilized, unconjugated QDs; QDs conjugated to the neurotransmitter dopamine; and dopamine alone. Results of indirect fluorescent ROS assays, both in solution and inside cells, are compared with those of spin-trap electron paramagentic resonance spectroscopy (EPR). The effect of these particles on the metabolism of mammalian cells is shown to be dependent upon light exposure and proportional to the amount of ROS generated.

  15. Formation of ZnSe/Bi{sub 2}Se{sub 3} QDs by surface cation exchange and high photothermal conversion

    SciTech Connect

    Jia, Guozhi; Wang, Peng; Zhang, Yanbang; Wu, Zengna; Li, Qiang; Yao, Jianghong; Chang, Kai

    2015-08-15

    Water-dispersed core/shell structure ZnSe/Bi{sub 2}Se{sub 3} quantum dots were synthesized by ultrasonicwave-assisted cation exchange reaction. Only surface Zn ion can be replaced by Bi ion in ZnSe quantum dots, which lead to the ultrathin Bi{sub 2}Se{sub 3} shell layer formed. It is significance to find to change the crystal of QDs due to the acting of ultrasonicwave. Cation exchange mechanism and excellent photothermal conversion properties are discussed in detail.

  16. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

    SciTech Connect

    Yerino, Christopher D.; Jung, Daehwan; Lee, Minjoo Larry; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.; Schneider, Christian; Unsleber, Sebastian; Vo, Minh; Kamp, Martin; Höfling, Sven

    2014-12-22

    Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

  17. Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: A first-principles study

    SciTech Connect

    Khomyakov, Petr A.; Luisier, Mathieu; Schenk, Andreas

    2015-08-10

    Using first-principles calculations, we show that the conduction and valence band energies and their deformation potentials exhibit a non-negligible compositional bowing in strained ternary semiconductor alloys such as InGaAs. The electronic structure of these compounds has been calculated within the framework of local density approximation and hybrid functional approach for large cubic supercells and special quasi-random structures, which represent two kinds of model structures for random alloys. We find that the predicted bowing effect for the band energy deformation potentials is rather insensitive to the choice of the functional and alloy structural model. The direction of bowing is determined by In cations that give a stronger contribution to the formation of the In{sub x}Ga{sub 1−x}As valence band states with x ≳ 0.5, compared to Ga cations.

  18. Border trap reduction in Al2O3/InGaAs gate stacks

    NASA Astrophysics Data System (ADS)

    Tang, Kechao; Winter, Roy; Zhang, Liangliang; Droopad, Ravi; Eizenberg, Moshe; McIntyre, Paul C.

    2015-11-01

    The effect of Al2O3 atomic layer deposition (ALD) temperature on the border trap density (Nbt) of Al2O3/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces Nbt. The reduction of Nbt coincides with increased hydrogen incorporation in low temperature ALD-grown Al2O3 films during post-gate metal forming gas annealing. It is also found that large-dose (˜6000 L) exposure of the In0.53Ga0.47As (100) surface to TMA immediately after thermal desorption of a protective As2 capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al2O3/InGaAs samples made at low ALD temperatures.

  19. Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography

    SciTech Connect

    Qian, X.; Li, J.; Wasserman, D.; Goodhue, W. D.

    2008-12-08

    We demonstrate the fabrication of optically active uniform InGaAs quantum dot arrays by combining nanosphere lithography and bromine ion-beam-assisted etching on a single InGaAs/GaAs quantum well. A wide range of lateral dot sizes was achieved from an oxygen plasma nanosphere resizing process. The increased lateral confinement of carriers in the dots results in low temperature photoluminescence blueshifts from 0.5 to 11 meV. Additional quantization was achieved using a selective wet-etch process. Our model suggests the presence of a 70 nm dead layer in the outer InGaAs radial edge, which we believe to be a result of defects and dislocations introduced during the dry-etch process.

  20. OMVPE growth and characterization of InGaAs for TPV cells

    SciTech Connect

    Ehsani, H.; Bhat, I.; Marcy, D. ); Nichols, G. ); Borrego, J. ); Parrington, J. ); Gutmann, R. )

    1995-01-05

    We describe the growth of InGaAs on InP substrates for the fabrication of thermo-photovoltaic cells. The growth by organometallic vapor phase epitaxy (OMVPE) is accomplished by a two-step process in which a thin buffer layer is grown first at low temperature followed by a thicker layer at 650 [degree]C. This method eliminates the need to maintain a phosphorous pressure over InP substrate before InGaAs growth is started. Specular films of In[sub 0.53]Ga[sub 0.47]As with hole life times in the range 100--200 nS have been obtained on InP substrates using the above two-step growth method.

  1. A low noise low power 512×256 ROIC for extended wavelength InGaAs FPA

    NASA Astrophysics Data System (ADS)

    Huang, Songlei; Huang, Zhangcheng; Chen, Yu; Li, Tao; Fang, Jiaxiong

    2015-05-01

    A low noise low power 512×256 readout integrated circuit (ROIC) based on Capacitance Trans-impedance Amplifier (CTIA) was designed in this paper. The ROIC with 30μm pixel-pitch and 70 fF integrated capacitance as normal structure and test structure capacitance from 5 to 60 fF, was fabricated in 0.5μm DPTM CMOS process. The results showed that output voltage was larger than 2.0V and power consumption was about 150mW, output ROIC noise was about 3.6E-4V which equivalent noise was 160e-, and the test structure noise was from 20e- to 140 e-. Compared the readout noises in Integration Then Readout (ITR) mode and Integration While Readout (IWR) mode, it indicated that in IWR mode, readout noise comes mainly from both integration capacitance and sampling capacitance, while in ITR mode, readout noise comes mostly from sampling capacitance. Finally the ROIC was flip-chip bonded with Indium bumps to extended wavelength InGaAs detectors with cutoff wavelength 2.5μm at 200K. The peak detectivity exceeded 5E11cmHz1/2/w with 70nA/cm2 dark current density at 200K.

  2. Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon

    SciTech Connect

    Tran, T.-T. D.; Chen, R.; Ng, K. W.; Ko, W. S.; Lu, F.; Chang-Hasnain, C. J.

    2014-09-15

    As-grown InGaAs nanoneedle lasers, synthesized at complementary metal–oxide–semiconductor compatible temperatures on polycrystalline and crystalline silicon substrates, were studied in photoluminescence experiments. Radiation patterns of three-dimensional whispering gallery modes were observed upon optically pumping the needles above the lasing threshold. Using the radiation patterns as well as finite-difference-time-domain simulations and polarization measurements, all modal numbers of the three-dimensional whispering gallery modes could be identified.

  3. InGaAs focal plane array developments at III-V Lab

    NASA Astrophysics Data System (ADS)

    Rouvié, Anne; Reverchon, Jean-Luc; Huet, Odile; Djedidi, Anis; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Bria, Toufiq; Pires, Mauricio; Decobert, Jean; Costard, Eric

    2012-06-01

    SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. For few years, III-VLab has been studying InGaAs imagery, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has lead to put quickly on the market a 320x256 InGaAs module, exhibiting high performances in terms of dark current, uniformity and quantum efficiency. In this paper, we present the last developments achieved in our laboratory, mainly focused on increasing the pixels number to VGA format associated to pixel pitch decrease (15μm) and broadening detection spectrum toward visible wavelengths. Depending on targeted applications, different Read Out Integrated Circuits (ROIC) have been used. Low noise ROIC have been developed by CEA LETI to fit the requirements of low light level imaging whereas logarithmic ROIC designed by NIT allows high dynamic imaging adapted for automotive safety.

  4. QDs-DNA nanosensor for the detection of hepatitis B virus DNA and the single-base mutants.

    PubMed

    Wang, Xiang; Lou, Xinhui; Wang, Yi; Guo, Qingchuan; Fang, Zheng; Zhong, Xinhua; Mao, Hongju; Jin, Qinghui; Wu, Lei; Zhao, Hui; Zhao, Jianlong

    2010-04-15

    We report here a quantum dots-DNA (QDs-DNA) nanosensor based on fluorescence resonance energy transfer (FRET) for the detection of the target DNA and single mismatch in hepatitis B virus (HBV) gene. The proposed one-pot DNA detection method is simple, rapid and efficient due to the elimination of the washing and separation steps. In this study, the water-soluble CdSe/ZnS QDs were prepared by replacing the trioctylphosphine oxide (TOPO) on the surface of QDs with 3-mercaptopropionic acid (MPA). Subsequently, oligonucleotides were attached to the QDs surface to form functional QDs-DNA conjugates. Along with the addition of DNA targets and Cy5-modified signal DNAs into the QDs-DNA conjugates, sandwiched hybrids were formed. The resulting assembly brings the Cy5 fluorophore, the acceptor, and the QDs, the donor, into proximity, leading to fluorescence emission from the acceptor by means of FRET on illumination of the donor. In order to efficiently detect single-base mutants in HBV gene, oligonucleotide ligation assay was employed. If there existed a single-base mismatch, which could be recognized by the ligase, the detection probe was not ligated and no Cy5 emission was produced due to the lack of FRET. The feasibility of the proposed method was also demonstrated in the detection of synthetic 30-mer oliginucleotide targets derived from the HBV with a sensitivity of 4.0nM by using a multilabel counter. The method enables a simple and efficient detection that could be potentially used for high throughput and multiplex detections of target DNA and the mutants.

  5. Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001)

    NASA Astrophysics Data System (ADS)

    O'Brien, William A.; Qi, Meng; Yan, Lifan; Stephenson, Chad A.; Protasenko, Vladimir; Xing, Huili; Millunchick, Joanna M.; Wistey, Mark A.

    2015-05-01

    This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs and AlGaAs by high-temperature in situ annealing using molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs were observed by atom probe tomography, which revealed nearly spherical QDs with diameters approaching 10 nm and confirmed the complete absence of a wetting layer. Reflection high-energy electron diffraction and atomic force microscopy of Ge annealed under similar conditions on GaAs and Al0.3Ga0.7As surfaces revealed the gradual suppression of QD formation with decreasing Al-content of the buffer. To investigate the prospects of using encapsulated Ge dots for upconverting photovoltaics, in which photocurrent can still be generated from photons with energy less than the host bandgap, Ge QDs were embedded into the active region of III-V PIN diodes by MBE. It was observed that orders of magnitude higher short-circuit current is obtained at photon energies below the GaAs bandgap compared with a reference PIN diode without Ge QDs. These results demonstrate the promise of Ge QDs for upconverting solar cells and the realization of device-quality integration of group IV and III-V semiconductors.

  6. Crystal growth of compound semiconductors in a low-gravity environment (InGaAs crystals) (M-22)

    NASA Technical Reports Server (NTRS)

    Tatsumi, Masami

    1993-01-01

    Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many interesting properties that silicon crystals lack, and they are expected to be used as materials for optic and/or electro-optic integrated devices. Generally speaking, alloy semiconductors, which consist of more than three elements, demonstrate new functions. For example, values of important parameters, such as lattice constant and emission wavelength, can be chosen independently. However, as it is easy for macroscopic and/or microscopic fluctuations of composition to occur in alloy semiconductor crystals, it is difficult to obtain crystals having homogeneous properties. Macroscopic change of composition in a crystal is caused by the segregation phenomenon. This phenomenon is due to a continuous change in the concentration of constituent elements at the solid-liquid interfacing during solidification. On Earth, attempts were made to obtain a crystal with homogeneous composition by maintaining a constant melt composition near the solid-liquid interface, through suppression of the convection flow of the melt by applying a magnetic field. However, the attempt was not completely successful. Convective flow does not occur in microgravity because the gravity in space is from four to six orders of magnitude less than that on Earth. In such a case, mass transfer in the melt is dominated by the diffusion phenomenon. So, if crystal growth is carried out at a rate that is higher than the rate of mass transfer due to this phenomenon, it is expected that crystals having a homogeneous composition will be obtained. In addition, it is also possible that microscopic composition fluctuations (striation) may disappear because microscopic fluctuations diminish in the absence of convection. We are going to grow a bulk-indium gallium arsenide (InGaAs) crystal using the gradient heating furnace (GHF) in the first material processing test (FMPT). The structure of the sample is shown where InGaAs

  7. The influence of cell penetrating peptide branching on cellular uptake of QDs

    NASA Astrophysics Data System (ADS)

    Breger, Joyce; Delehanty, James; Susumu, Kimihiro; Anderson, George; Muttenhaler, Markus; Dawson, Philip; Medintz, Igor

    2016-03-01

    Semiconductor quantum dots (QDs) serve as a valuable platform for understating the intricacies of nanoparticle cellular uptake and fate for the development of theranostics. Developing novel internalization peptides that maximize cellular uptake while minimizing the amount of peptide is important to allow space on the nanoparticle for other cargo (e.g. drugs). We have designed a range of branched, dendritic internalization peptides composed of polyarginine (Arg9) branches (1 to 16 repeats) attached a dendritic wedge based on the sequence WP9G2H6. By attaching these branched dendritic peptides to QD's, we can study the influence of branching on cellular uptake as a function of time, ratio, and degree of branching.

  8. Quantum dots (QDs) based fluorescence probe for the sensitive determination of kaempferol

    NASA Astrophysics Data System (ADS)

    Tan, Xuanping; Liu, Shaopu; Shen, Yizhong; He, Youqiu; Yang, Jidong

    2014-12-01

    In this work, using the quenching of fluorescence of thioglycollic acid (TGA)-capped CdTe quantum dots (QDs), a novel method for the determination of kaempferol (KAE) has been developed. Under optimum conditions, a linear calibration plot of the quenched fluorescence intensity at 552 nm against the concentration of KAE was observed in the range of 4-44 μg mL-1 with a detection limit (3σ/K) of 0.79 μg mL-1. In addition, the detailed reaction mechanism has also been proposed on the basis of electron transfer supported by ultraviolet-visible (UV-vis) absorption and fluorescence (FL) spectroscopy. The method has been applied for the determination of KAE in pharmaceutical preparations with satisfactory results. The proposed method manifested several advantages such as high sensitivity, short analysis time, low cost and ease of operation.

  9. Ultrasensitive fluorescence immunoassay for detection of ochratoxin A using catalase-mediated fluorescence quenching of CdTe QDs.

    PubMed

    Huang, Xiaolin; Zhan, Shengnan; Xu, Hengyi; Meng, Xianwei; Xiong, Yonghua; Chen, Xiaoyuan

    2016-04-28

    Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to perform a dynamic linear detection of OTA ranging from 0.05 pg mL(-1) to 10 pg mL(-1). The half maximal inhibitory concentration was 0.53 pg mL(-1) and the limit of detection was 0.05 pg mL(-1). These values were approximately 283- and 300-folds lower than those of horseradish peroxidase (HRP)-based conventional ELISA, respectively. The reported method is accurate, highly reproducible, and specific against other mycotoxins in agricultural products as well. In summary, the developed fluorescence immunoassay based on H2O2-induced fluorescence quenching of CdTe QDs can be used for the rapid and highly sensitive detection of mycotoxins or haptens in food safety monitoring. PMID:27093176

  10. Albumin-Mediated Biomineralization of Paramagnetic NIR Ag2S QDs for Tiny Tumor Bimodal Targeted Imaging in Vivo.

    PubMed

    Zhang, Jing; Hao, Guangyu; Yao, Chenfei; Yu, Jiani; Wang, Jun; Yang, Weitao; Hu, Chunhong; Zhang, Bingbo

    2016-07-01

    Bimodal imaging has captured increasing interests due to its complementary characteristics of two kinds of imaging modalities. Among the various dual-modal imaging techniques, MR/fluorescence imaging has been widely studied owing to its high 3D resolution and sensitivity. There is, however, still a strong demand to construct biocompatible MR/fluorescence contrast agents with near-infrared (NIR) fluorescent emissions and high relaxivities. In this study, BSA-DTPA(Gd) derived from bovine serum albumin (BSA) as a novel kind of biotemplate is employed for biomineralization of paramagnetic NIR Ag2S quantum dots (denoted as Ag2S@BSA-DTPA(Gd) pQDs). This synthetic strategy is found to be bioinspired, environmentally benign, and straightforward. The obtained Ag2S@BSA-DTPA(Gd) pQDs have fine sizes (ca. 6 nm) and good colloidal stability. They exhibit unabated NIR fluorescent emission (ca. 790 nm) as well as high longitudinal relaxivity (r1 = 12.6 mM(-1) s(-1)) compared to that of commercial Magnevist (r1 = 3.13 mM(-1) s(-1)). In vivo tumor-bearing MR and fluorescence imaging both demonstrate that Ag2S@BSA-DTPA(Gd) pQDs have pronounced tiny tumor targeting capability. In vitro and in vivo toxicity study show Ag2S@BSA-DTPA(Gd) pQDs are biocompatible. Also, biodistribution analysis indicates they can be cleared from body mainly via liver metabolism. This protein-mediated biomineralized Ag2S@BSA-DTPA(Gd) pQDs presents great potential as a novel bimodal imaging contrast agent for tiny tumor diagnosis. PMID:27300300

  11. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm

    SciTech Connect

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Müller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 20–40 nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1 nm and 5 nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  12. Enhanced lateral photovoltaic effect observed in CdSe quantum dots embedded structure of Zn/CdSe/Si.

    PubMed

    Lan, Tian; Liu, Shuai; Wang, Hui

    2011-01-01

    The quantum dots (QDs) system has been intensively studied for decades owing to its huge potential for applications. In this Letter, we report a lateral photovoltaic effect (LPE) with a large sensitivity observed in CdSe QDs embedded structure of Zn/CdSe/Si. This result not only enriches applications of the QDs system but also opens a new window to study the carrier dynamics of the QDs system.

  13. Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates

    PubMed Central

    2010-01-01

    We report on various self-assembled In(Ga)As nanostructures by droplet epitaxy on GaAs substrates using molecular beam epitaxy. Depending on the growth condition and index of surfaces, various nanostructures can be fabricated: quantum dots (QDs), ring-like and holed-triangular nanostructures. At near room temperatures, by limiting surface diffusion of adatoms, the size of In droplets suitable for quantum confinement can be fabricated and thus InAs QDs are demonstrated on GaAs (100) surface. On the other hand, at relatively higher substrate temperatures, by enhancing the surface migrations of In adatoms, super lower density of InGaAs ring-shaped nanostructures can be fabricated on GaAs (100). Under an identical growth condition, holed-triangular InGaAs nanostructures can be fabricated on GaAs type-A surfaces, while ring-shaped nanostructures are formed on GaAs (100). The formation mechanism of various nanostructures can be understood in terms of intermixing, surface diffusion, and surface reconstruction. PMID:20671787

  14. Threshold Dose of Three Types of Quantum Dots (QDs) Induces Oxidative Stress Triggers DNA Damage and Apoptosis in Mouse Fibroblast L929 Cells.

    PubMed

    Zhang, Ting; Wang, Yiqing; Kong, Lu; Xue, Yuying; Tang, Meng

    2015-10-01

    Although it has been reported that fluorescent quantum dots (QDs) have obvious acute toxic effects in vitro, their toxic effects at low doses or threshold doses are still unknown. Therefore, we evaluated the biological histocompatibility and in vitro toxicity of three types of QDs at threshold doses. Also, we compared the toxic effects of QDs with different raw chemical compositions and sizes. The results showed that low concentrations of QDs (≤7 μg/mL) had no obvious effect on cell viability and cell membrane damage, oxidative damage, cell apoptosis or DNA damage. However, QD exposure led to a significant cytotoxicity at higher doses (≥14 μg/mL) and induced abnormal cellular morphology. In addition, when comparing the three types of QDs, 2.2 nm CdTe QDs exposure showed a significantly increased proportion of apoptotic cells and significant DNA damage, suggesting that size and composition contribute to the toxic effects of QDs. Based on these discussions, it was concluded that the concentration (7 μg/mL) may serve as a threshold level for these three types of QDs only in L929 fibroblasts, whereas high concentrations (above 14 μg/mL) may be toxic, resulting in inhibition of proliferation, induction of apoptosis and DNA damage in L929 fibroblasts. PMID:26516873

  15. Threshold Dose of Three Types of Quantum Dots (QDs) Induces Oxidative Stress Triggers DNA Damage and Apoptosis in Mouse Fibroblast L929 Cells.

    PubMed

    Zhang, Ting; Wang, Yiqing; Kong, Lu; Xue, Yuying; Tang, Meng

    2015-10-26

    Although it has been reported that fluorescent quantum dots (QDs) have obvious acute toxic effects in vitro, their toxic effects at low doses or threshold doses are still unknown. Therefore, we evaluated the biological histocompatibility and in vitro toxicity of three types of QDs at threshold doses. Also, we compared the toxic effects of QDs with different raw chemical compositions and sizes. The results showed that low concentrations of QDs (≤7 μg/mL) had no obvious effect on cell viability and cell membrane damage, oxidative damage, cell apoptosis or DNA damage. However, QD exposure led to a significant cytotoxicity at higher doses (≥14 μg/mL) and induced abnormal cellular morphology. In addition, when comparing the three types of QDs, 2.2 nm CdTe QDs exposure showed a significantly increased proportion of apoptotic cells and significant DNA damage, suggesting that size and composition contribute to the toxic effects of QDs. Based on these discussions, it was concluded that the concentration (7 μg/mL) may serve as a threshold level for these three types of QDs only in L929 fibroblasts, whereas high concentrations (above 14 μg/mL) may be toxic, resulting in inhibition of proliferation, induction of apoptosis and DNA damage in L929 fibroblasts.

  16. Threshold Dose of Three Types of Quantum Dots (QDs) Induces Oxidative Stress Triggers DNA Damage and Apoptosis in Mouse Fibroblast L929 Cells

    PubMed Central

    Zhang, Ting; Wang, Yiqing; Kong, Lu; Xue, Yuying; Tang, Meng

    2015-01-01

    Although it has been reported that fluorescent quantum dots (QDs) have obvious acute toxic effects in vitro, their toxic effects at low doses or threshold doses are still unknown. Therefore, we evaluated the biological histocompatibility and in vitro toxicity of three types of QDs at threshold doses. Also, we compared the toxic effects of QDs with different raw chemical compositions and sizes. The results showed that low concentrations of QDs (≤7 μg/mL) had no obvious effect on cell viability and cell membrane damage, oxidative damage, cell apoptosis or DNA damage. However, QD exposure led to a significant cytotoxicity at higher doses (≥14 μg/mL) and induced abnormal cellular morphology. In addition, when comparing the three types of QDs, 2.2 nm CdTe QDs exposure showed a significantly increased proportion of apoptotic cells and significant DNA damage, suggesting that size and composition contribute to the toxic effects of QDs. Based on these discussions, it was concluded that the concentration (7 μg/mL) may serve as a threshold level for these three types of QDs only in L929 fibroblasts, whereas high concentrations (above 14 μg/mL) may be toxic, resulting in inhibition of proliferation, induction of apoptosis and DNA damage in L929 fibroblasts. PMID:26516873

  17. Short wave infrared InGaAs focal plane arrays detector: the performance optimization of photosensitive element

    NASA Astrophysics Data System (ADS)

    Gao, Xin-jiang; Tang, Zun-lie; Zhang, Xiu-chuan; Chen, Yang; Jiang, Li-qun; Cheng, Hong-bing

    2009-07-01

    Significant progress has been achieved in technology of the InGaAs focal plane arrays (FPA) detector operating in short wave infrared (SWIR) last two decades. The no cryogenic cooling, low manufacturing cost, low power, high sensitivity and maneuverability features inherent of InGaAs FPA make it as a mainstream SWIR FPA in a variety of critical military, national security, aerospace, telecommunications and industrial applications. These various types of passive image sensing or active illumination image detecting systems included range-gated imaging, 3-Dimensional Ladar, covert surveillance, pulsed laser beam profiling, machine vision, semiconductor inspection, free space optical communications beam tracker, hyperspectroscopy imaging and many others. In this paper the status and perspectives of hybrid InGaAs FPA which is composed of detector array (PDA) and CMOS readout integrate circuit (ROIC) are reviewed briefly. For various low light levels applications such as starlight or night sky illumination, we have made use of the interface circuit of capacitive feedback transimpedance amplifier (CTIA) in which the integration capacitor was adjustable, therefore implements of the physical and electrical characteristics matches between detector arrays and readout intergrate circuit was achieved excellently. Taking into account the influences of InGaAs detector arrays' optoelectronic characteristics on performance of the FPA, we discussed the key parameters of the photodiode in detailed, and the tradeoff between the responsivity, dark current, impedance at zero bias and junction capacitance of photosensitive element has been made to root out the impact factors. As a result of the educed approach of the photodiode's characteristics optimizing which involve with InGaAs PDA design and process, a high performance InGaAs FPA of 30um pixel pitch and 320×256 format has been developed of which the response spectrum range over 0.9um to 1.7um, the mean peak detectivity (λ=1.55

  18. Ultrasensitive fluorescence immunoassay for detection of ochratoxin A using catalase-mediated fluorescence quenching of CdTe QDs

    NASA Astrophysics Data System (ADS)

    Huang, Xiaolin; Zhan, Shengnan; Xu, Hengyi; Meng, Xianwei; Xiong, Yonghua; Chen, Xiaoyuan

    2016-04-01

    Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to perform a dynamic linear detection of OTA ranging from 0.05 pg mL-1 to 10 pg mL-1. The half maximal inhibitory concentration was 0.53 pg mL-1 and the limit of detection was 0.05 pg mL-1. These values were approximately 283- and 300-folds lower than those of horseradish peroxidase (HRP)-based conventional ELISA, respectively. The reported method is accurate, highly reproducible, and specific against other mycotoxins in agricultural products as well. In summary, the developed fluorescence immunoassay based on H2O2-induced fluorescence quenching of CdTe QDs can be used for the rapid and highly sensitive detection of mycotoxins or haptens in food safety monitoring.Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to

  19. Development of a Quantum Dot, 0.6 eV InGaAs Thermophotovoltaic (TPV) Converter

    NASA Technical Reports Server (NTRS)

    Forbes, David; Sinharoy, Samar; Raffalle, Ryne; Weizer, Victor; Homann, Natalie; Valko, Thomas; Bartos,Nichole; Scheiman, David; Bailey, Sheila

    2007-01-01

    Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes

  20. CdS QDs-chitosan microcapsules with stimuli-responsive property generated by gas-liquid microfluidic technique.

    PubMed

    Chen, Yanjun; Yao, Rongyi; Wang, Yifeng; Chen, Ming; Qiu, Tong; Zhang, Chaocan

    2015-01-01

    This article describes a straightforward gas-liquid microfluidic approach to generate uniform-sized chitosan microcapsules containing CdS quantum dots (QDs). CdS QDs are encapsulated into the liquid-core of the microcapsules. The sizes of the microcapsules can be conveniently controlled by gas flow rate. QDs-chitosan microcapsules show good fluorescent stability in water, and exhibit fluorescent responses to chemical environmental stimuli. α-Cyclodextrin (α-CD) causes the microcapsules to deform and even collapse. More interestingly, α-CD induces obvious changes on the fluorescent color of the microcapsules. However, β-cyclodextrin (β-CD) has little influence on the shape and fluorescent color of the microcapsules. Based on the results of scanning electron microscopy, the possible mechanism about the effects of α-CD on the chitosan microcapsules is analyzed. These stimuli-responsive microcapsules are low-cost and easy to be prepared by gas-liquid microfluidic technique, and can be applied as a potential micro-detector to chemicals, such as CDs.

  1. Characterization of InGaAs linear array for applications to remote sensing

    NASA Astrophysics Data System (ADS)

    Garcia, Christopher S.; Refaat, Tamer F.; Farnsworth, Glenn R.; Abedin, M. N.; Elsayed-Ali, Hani E.

    2005-05-01

    An Indium Gallium Arsenide linear photodiode array in the 1.1-2.5 μm spectral range was characterized. The array has 1024X1 pixels with a 25 μm pitch and was manufactured by Sensors Unlimited, Inc. Characterization and analysis of the electrical and optical properties of a camera system were carried out at room temperature to obtain detector performance parameters. The signal and noise were measured while the array was uniformly illuminated at varying exposure levels. A photon transfer curve was generated by plotting noise as a function of average signal to obtain the camera gain constant. The spectral responsivity was also measured, and the quantum efficiency, read noise and full-well capacity were determined. This paper describes the characterization procedure, analyzes the experimental results, and discusses the applications of the InGaAs linear array to future earth and planetary remote sensing mission.

  2. InGaAs PV Device Development for TPV Power Systems

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Fatemi, Navid S.; Hoffman, Richard W., Jr.; Jenkins, Phillip P.; Scheiman, David; Lowe, Roland; Landis, Geoffrey A.

    1994-01-01

    Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

  3. Characterization of InGaAs Linear Array for Applications to Remote Sensing

    NASA Technical Reports Server (NTRS)

    Garcia, Christopher S.; Refaat, Tamer F.; Farnsworth, Glenn R.; Abedin, M. N.; Elsayed-Ali, Hani E.

    2005-01-01

    An Indium Gallium Arsenide linear photodiode array in the 1.1-2.5 micron spectral range was characterized. The array has 1024x1 pixels with a 25 micron pitch and was manufactured by Sensors Unlimited, Inc. Characterization and analysis of the electrical and optical properties of a camera system were carried out at room temperature to obtain detector performance parameters. The signal and noise were measured while the array was uniformly illuminated at varying exposure levels. A photon transfer curve was generated by plotting noise as a function of average signal to obtain the camera gain constant. The spectral responsivity was also measured, and the quantum efficiency, read noise and full-well capacity were determined. This paper describes the characterization procedure, analyzes the experimental results, and discusses the applications of the InGaAs linear array to future earth and planetary remote sensing mission.

  4. Cadmium Telluride Quantum Dots (CdTe-QDs) and Enhanced Ultraviolet-B (UV-B) Radiation Trigger Antioxidant Enzyme Metabolism and Programmed Cell Death in Wheat Seedlings

    PubMed Central

    Han, Rong

    2014-01-01

    Nanoparticles (NPs) are becoming increasingly widespread in the environment. Free cadmium ions released from commonly used NPs under ultraviolet-B (UV-B) radiation are potentially toxic to living organisms. With increasing levels of UV-B radiation at the Earth’s surface due to the depletion of the ozone layer, the potential additive effect of NPs and UV-B radiation on plants is of concern. In this study, we investigated the synergistic effect of CdTe quantum dots (CdTe-QDs), a common form of NP, and UV-B radiation on wheat seedlings. Graded doses of CdTe-QDs and UV-B radiation were tested, either alone or in combination, based on physical characteristics of 5-day-old seedlings. Treatments of wheat seedlings with either CdTe-QDs (200 mg/L) or UV-B radiation (10 KJ/m2/d) induced the activation of wheat antioxidant enzymes. CdTe-QDs accumulation in plant root cells resulted in programmed cell death as detected by DNA laddering. CdTe-QDs and UV-B radiation inhibited root and shoot growth, respectively. Additive inhibitory effects were observed in the combined treatment group. This research described the effects of UV-B and CdTe-QDs on plant growth. Furthermore, the finding that CdTe-QDs accumulate during the life cycle of plants highlights the need for sustained assessments of these interactions. PMID:25329900

  5. Cadmium telluride quantum dots (CdTe-QDs) and enhanced ultraviolet-B (UV-B) radiation trigger antioxidant enzyme metabolism and programmed cell death in wheat seedlings.

    PubMed

    Chen, Huize; Gong, Yan; Han, Rong

    2014-01-01

    Nanoparticles (NPs) are becoming increasingly widespread in the environment. Free cadmium ions released from commonly used NPs under ultraviolet-B (UV-B) radiation are potentially toxic to living organisms. With increasing levels of UV-B radiation at the Earth's surface due to the depletion of the ozone layer, the potential additive effect of NPs and UV-B radiation on plants is of concern. In this study, we investigated the synergistic effect of CdTe quantum dots (CdTe-QDs), a common form of NP, and UV-B radiation on wheat seedlings. Graded doses of CdTe-QDs and UV-B radiation were tested, either alone or in combination, based on physical characteristics of 5-day-old seedlings. Treatments of wheat seedlings with either CdTe-QDs (200 mg/L) or UV-B radiation (10 KJ/m(2)/d) induced the activation of wheat antioxidant enzymes. CdTe-QDs accumulation in plant root cells resulted in programmed cell death as detected by DNA laddering. CdTe-QDs and UV-B radiation inhibited root and shoot growth, respectively. Additive inhibitory effects were observed in the combined treatment group. This research described the effects of UV-B and CdTe-QDs on plant growth. Furthermore, the finding that CdTe-QDs accumulate during the life cycle of plants highlights the need for sustained assessments of these interactions.

  6. Subwavelength Gold Grating as Polarizers Integrated with InP-Based InGaAs Sensors.

    PubMed

    Wang, Rui; Li, Tao; Shao, Xiumei; Li, Xue; Huang, Xiaqi; Shao, Jinhai; Chen, Yifang; Gong, Haimei

    2015-07-01

    There are currently growing needs for polarimetric imaging in infrared wavelengths for broad applications in bioscience, communications and agriculture, etc. Subwavelength metallic gratings are capable of separating transverse magnetic (TM) mode from transverse electric (TE) mode to form polarized light, offering a reliable approach for the detection in polarization way. This work aims to design and fabricate subwavelength gold gratings as polarizers for InP-based InGaAs sensors in 1.0-1.6 μm. The polarization capability of gold gratings on InP substrate with pitches in the range of 200-1200 nm (fixed duty cycle of 0.5) has been systematically studied by both theoretical modeling with a finite-difference time-domain (FDTD) simulator and spectral measurements. Gratings with 200 nm lines/space in 100-nm-thick gold have been fabricated by electron beam lithography (EBL). It was found that subwavelength gold gratings directly integrated on InP cannot be applied as good polarizers, because of the existence of SPP modes in the detection wavelengths. An effective solution has been found by sandwiching the Au/InP bilayer using a 200 nm SiO2 layer, leading to significant improvement in both TM transmission and extinction ratio. At 1.35 μm, the improvement factors are 8 and 10, respectively. Therefore, it is concluded that the Au/SiO2/InP trilayer should be a promising candidate of near-infrared polarizers for the InP-based InGaAs sensors.

  7. Vacuum packaging of InGaAs focal plane array with four-stage thermoelectric cooler

    NASA Astrophysics Data System (ADS)

    Mo, De-feng; Liu, Da-fu; Yang, Li-yi; Xu, Qin-fei; Li, Xue

    2013-09-01

    The InGaAs focal plane array (FPA) detectors, covering the near-infrared 1~2.4 μm wavelength range, have been developed for application in space-based spectroscopy of the Earth atmosphere. This paper shows an all-metal vacuum package design for area array InGaAs detector of 1024×64 pixels, and its architecture will be given. Four-stage thermoelectric cooler (TEC) is used to cool down the FPA chip. To acquire high heat dissipation for TEC's Joule-heat, tungsten copper (CuW80) and kovar (4J29) is used as motherboard and cavity material respectively which joined by brazing. The heat loss including conduction, convection and radiation is analyzed. Finite element model is established to analyze the temperature uniformity of the chip substrate which is made of aluminum nitride (AlN). The performance of The TEC with and without heat load in vacuum condition is tested. The results show that the heat load has little influence to current-voltage relationship of TEC. The temperature difference (ΔT) increases as the input current increases. A linear relationship exists between heat load and ΔT of the TEC. Theoretical analysis and calculation show that the heat loss of radiation and conduction is about 187 mW and 82 mW respectively. Considering the Joule-heat of readout circuit and the heat loss of radiation and conduction, the FPA for a 220 K operation at room temperature can be achieved. As the thickness of AlN chip substrate is thicker than 1 millimeter, the temperature difference can be less than 0.3 K.

  8. Development of high performance SWIR InGaAs focal plane array

    NASA Astrophysics Data System (ADS)

    Nagi, Richie; Bregman, Jeremy; Mizuno, Genki; Oduor, Patrick; Olah, Robert; Dutta, Achyut K.; Dhar, Nibir K.

    2015-05-01

    Banpil Photonics has developed a novel InGaAs based photodetector array for Short-Wave Infrared (SWIR) imaging, for the most demanding security, defense, and machine vision applications. These applications require low noise from both the detector and the readout integrated circuit arrays. In order to achieve high sensitivity, it is crucial to minimize the dark current generated by the photodiode array. This enables the sensor to function in extremely low light situations, which enables it to successfully exploit the benefits of the SWIR band. In addition to minimal dark current generation, it is essential to develop photodiode arrays with higher operating temperatures. This is critical for reducing the power consumption of the device, as less energy is spent in cooling down the focal plane array (in order to reduce the dark current). We at Banpil Photonics are designing, simulating, fabricating and testing SWIR InGaAs arrays, and have achieved low dark current density at room temperature. This paper describes Banpil's development of the photodetector array. We also highlight the fabrication technique used to reduce the amount of dark current generated by the photodiode array, in particular the surface leakage current. This technique involves the deposition of strongly negatively doped semiconductor material in the area between the pixels. This process reduces the number of dangling bonds present on the edges of each pixel, which prevents electrons from being swept across the surface of the pixels. This in turn drastically reduces the amount of surface leakage current at each pixel, which is a major contributor towards the total dark current. We present the optical and electrical characterization data, as well as the analysis that illustrates the dark current mechanisms. Also highlighted are the challenges and potential opportunities for further reduction of dark current, while maintaining other parameters of the photodiode array, such as size, weight, temperature

  9. Reduction in interface state density of Al{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

    SciTech Connect

    Hoshii, Takuya; Lee, Sunghoon; Suzuki, Rena; Taoka, Noriyuki; Yokoyama, Masafumi; Takenaka, Mitsuru; Takagi, Shinichi; Yamada, Hishashi; Hata, Masahiko; Yasuda, Tetsuji

    2012-10-01

    We report the decrease in interface trap density (D{sub it}) in Al{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors by using electron cyclotron resonance plasma nitridation of the InGaAs surfaces. The impact of the nitridation process on the MOS interface properties is quantitatively examined. The plasma nitridation process is observed to form a nitrided layer at the InGaAs surface. The nitridation using microwave power (P{sub microwave}) of 250 W and nitridation time (t{sub nitridation}) of 420 s can form Al{sub 2}O{sub 3}/InGaAs MOS interfaces with a minimum D{sub it} value of 2.0 Multiplication-Sign 10{sup 11} cm{sup -2} eV{sup -1}. On the other hand, the nitridation process parameters such as P{sub microwave} and t{sub nitridation} are found to strongly alter D{sub it} (both decrease and increase are observed) and capacitance equivalent thickness (CET). It is found that the nitridation with higher P{sub microwave} and shorter t{sub nitridation} can reduce D{sub it} with less CET increase. Also, it is observed that as t{sub nitridation} increases, D{sub it} decreases first and increases later. It is revealed from XPS analyses that minimum D{sub it} can be determined by the balance between the saturation of nitridation and the progress of oxidation. As a result, it is found that the superior MOS interface formed by the nitridation is attributable to the existence of oxide-less InGaN/InGaAs interfaces.

  10. Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2

    NASA Astrophysics Data System (ADS)

    Melitz, Wilhelm; Kent, Tyler; Kummel, Andrew C.; Droopad, Ravi; Holland, Martin; Thayne, Iain

    2012-04-01

    Formation of a contaminant free, flat, electrically passive interface to a gate oxide such as a-Al2O3 is the critical step in fabricating III-V metal oxide semiconductor field effect transistors; while the bulk oxide is amorphous, the interface may need to be ordered to prevent electrical defect formation. A two temperature in situ cleaning process is shown to produce a clean, flat group III or group V rich InGaAs surface. The dependence of initial surface reconstruction and dosing temperature of the seeding of aluminum with trimethylaluminum dosing is observed to produce an ordered unpinned passivation layer on InGaAs(001)-(4 × 2) surface at sample temperatures below 190 °C. Conversely, the InGaAs(001)-(2 × 4) surface is shown to generate an unpinned passivation layer with a seeding temperature up to 280 °C. For both reconstructions, the chemical drive force is consistent with formation of As-Al-As bonds. The optimal seed layer protects the surface from background contamination.

  11. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect

    Takamoto, T.; Ikeda, E.; Agui, T.

    1997-12-31

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  12. Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs

    SciTech Connect

    Salii, R. A.; Mintairov, S. A.; Brunkov, P. N.; Nadtochiy, A. M.; Payusov, A. S.; Kalyuzhnyy, N. A.

    2015-08-15

    The specific features of growth in the InAs-GaAs system by the metal-organic chemical vapor deposition method are studied. The dependences of the In content of the InxGa{sub 1−x}As solid solution and of the InAs growth rate on the molar flow of In in a wide temperature range (480–700°C) are determined. The growth processes of InAs quantum dots (QDs) on GaAs with different surface misorientations are examined. The conditions are found in which InAs QDs are formed with a small number of defects and at a high density on a GaAs “sublayer” grown at a high rate. An epitaxial technique is developed for the synthesis of InAs QDs with multimodal size distribution and an extended photoluminescence spectrum, which can be effectively used in designing solar cells with QDs in the active region.

  13. Cavity-enhanced single photon emission from site-controlled In(Ga)As quantum dots fabricated using nanoimprint lithography

    SciTech Connect

    Tommila, J.; Hakkarainen, T. V.; Schramm, A. Guina, M.; Belykh, V. V.; Sibeldin, N. N.; Heinonen, E.

    2014-05-26

    We report on the emission dynamics of single In(Ga)As quantum dots formed in etched GaAs pits and integrated into micropillar cavities. The site-controlled quantum dots were fabricated by molecular beam epitaxy on nanoimprint lithography patterned GaAs(001) surfaces. Triggered single photon emission confirmed by photon autocorrelation measurements is demonstrated. Time-resolved photoluminescence experiments clearly show an effect of the cavity on the spontaneous emission rate of the quantum dot.

  14. Dually enriched Cu:CdS@ZnS QDs with both polyvinylpyrrolidone twisting and SiO2 loading for improved cell imaging.

    PubMed

    Li, Mei; Xu, Chaoying; Wu, Lan; Wu, Peng; Hou, Xiandeng

    2015-02-28

    Through harvesting of the increased Stokes shift of CdS QDs via Cu-doping, the concentration-quenching or aggregation-quenching of CdS QDs was largely alleviated. A dually-enriched strategy with both polyvinylpyrrolidone (PVP) twisting and SiO2 loading was developed for generating a highly luminescent doped-dots (d-dots) assembly for improved cell imaging.

  15. Development of hybrid organic-inorganic surface imprinted Mn-doped ZnS QDs and their application as a sensing material for target proteins.

    PubMed

    Tan, Lei; Huang, Cong; Peng, Rongfei; Tang, Youwen; Li, Weiming

    2014-11-15

    Applying molecular imprinting techniques to the surface of functionalized quantum dots (QDs) allows the preparation of molecularly imprinted polymers (MIPs) with accessible, surface exposed binding sites and excellent optical properties. This paper demonstrates a new strategy for producing such hybrid organic-inorganic imprinted Mn-doped ZnS QDs for specific recognition of bovine hemoglobin. The technique provides surface grafting imprinting in aqueous solutions using amino modified Mn-doped ZnS QDs as supports, acrylamide and methacrylic acid as functional monomers, γ-methacryloxypropyl trimethoxy silane as the grafting agent, and bovine hemoglobin as a template. The amino propyl functional monomer layer directs the selective occurrence of imprinting polymerization at the QDs surface through copolymerization of grafting agents with functional monomers, but also acts as an assistive monomer to drive the template into the formed polymer shells to create effective recognition sites. Using MIP-QDs composites as a fluorescence sensing material, trace amounts of bovine hemoglobin are signaled with high selectivity by emission intensity changes of Mn-doped ZnS QDs, which is embedded into the imprinted polymers.

  16. Synthesis and characterization of Mn doped ZnCdS core shell nanostructures QDs using a chemical precipitation route

    NASA Astrophysics Data System (ADS)

    Kaur, Manpreet; Pandey, O. P.; Sharma, Manoj

    2016-04-01

    With advancement in time, researchers has drawn great attention in the synthesis and characterization of mono dispersed alloyed nanocomposites of II-VI compounds. Ternary semiconductor alloyed ZnCdS quantum dots (QD's) exhibit properties intermediate between those of ZnS and CdS. It shows high absorption coefficients, a composition tunable and size tunable band gap. Moreover, ZnCdS alloyed NC's display unique composition dependent properties distinct from those of their bulk counterparts. The most striking feature of the alloyed NC's nanocrystals is their unusual long time stability in emission wavelength. ZnCdS alloyed QD's at room temperature has been synthesized using chemical precipitation method. Undoped and Mn2+ doped ZnCdS QDs have been synthesized and studied. UV-visible absorption spectrum shows absorbance in the visible region and photoluminescence (PL) emission spectra of the doped ZnCdS QD's shows orange emission in comparison to weak blue emission from undoped QDs. The crystallite size is calculated from the XRD patterns. The experimental results indicate that this easy synthesis route would prove a versatile approach for the preparation of doped and undoped ZnCdS QD's.

  17. Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers

    SciTech Connect

    Pocha, M D; Goddard, L L; Bond, T C; Nikolic, R J; Vernon, S P; Kallman, J S; Behymer, E M

    2007-01-03

    In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB gain in the optical AM efficiency under non-ideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.

  18. High dynamic solutions for short-wavelength infrared imaging based on InGaAs

    NASA Astrophysics Data System (ADS)

    Reverchon, Jean-Luc; Decobert, Jean; Djedidi, Anis; Gentner, Jean-Louis; Huet, Odile; Lagay, Nadine; Rouvié, Anne; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Costard, Eric; Ni, Yang; Arion, Bogdan; Zhu, Yiming; Potet, Pierre

    2011-06-01

    Short-wavelength infrared image sensors based on p-i-n photodiode arrays present a tremendous interest in applications such as passive and active imagery for laser detection/warning, hot spot or detection for lasers sensors, enhanced vision systems or low light level sensors. The capability to work at room temperature with dark current equivalent to silicon-based devices is another motivation for the fast development of this technology. This paper presents several modules and camera based on InGaAs photodiode arrays from the III-VLab. First, we describe the electro-optics performance in terms of dark signal, sensitivity, and particularly the visible extension capability. We also present a nucless logarithmic sensor based on a 1/2 video graphics array (VGA) format at a pitch of 25 μm initially designed for visible CMOS camera chip. We will also present the next generation of focal plane arrays based on a VGA format of 640×512 pixels with a pitch of 15 μm. This array will be associated to a CTIA readout circuit and also to an innovative CMOS logarithmic wide dynamic range ROIC, developed by New Imaging Technologies. This VGA logarithmic device developed for automotive safety will involve visible extension capability in a European project named 2Wide_sense.

  19. Polarized and spatially resolved Raman scattering from composition-graded wurtzite InGaAs nanowires

    NASA Astrophysics Data System (ADS)

    Kim, H.; Rho, H.; Lee, E. H.; Song, J. D.

    2016-05-01

    We report Raman scattering from wurtzite single-crystalline InGaAs nanowires (NWs) to probe optical phonon behaviors associated with spatial grading in alloy composition along the NW length. Polarized Raman spectra revealed several optical phonons and their scattering symmetries: (i) InAs-like A 1(LO) and A 1(TO) phonons and (ii) GaAs-like A 1(LO), A 1(TO), and E 2(high) phonons. In addition, strong anisotropic behavior was observed in the Raman tensor elements of the A 1(TO) phonon mode. Interestingly, a spatial mapping of the GaAs-like A 1(TO) phonon along the NW length direction showed a systematic increase in energy from the NW top (~255 cm‑1) to the midpoint (~263 cm‑1), indicating an increase in the Ga mole fraction from about 0.5 to about 0.8. Further toward the NW bottom, the GaAs-like A 1(TO) phonon energy saturated to the peak value at about 264 cm‑1. In the upper half of the NW, the phonon linewidths broadened significantly due to the spatial grading in In/Ga composition along the NW length. When the composition grading was negligible in the bottom half of the NW, the spectral widths were considerably narrowed. The GaAs-like E 2(high) phonon showed similar variations in both energy and spectral width along the NW length.

  20. Stray light characterization of an InGaAs anamorphic hyperspectral imager.

    PubMed

    Lin, Mike; Swanson, Rand; Moon, Thomas; Smith, Casey; Kehoe, Michael; Brown, Steven W; Lykke, Keith R

    2010-08-01

    Compact hyperspectral sensors potentially have a wide range of applications, including machine vision, quality control, and surveillance from small Unmanned Aerial Vehicles (UAVs). With the development of Indium Gallium Arsenide (InGaAs) focal plane arrays, much of the Short Wave Infra-Red (SWIR) spectral regime can be accessed with a small hyperspectral imaging system, thereby substantially expanding hyperspectral sensing capabilities. To fully realize this potential, system performance must be well-understood. Here, stray light characterization of a recently-developed push-broom hyperspectral sensor sensitive in the 1 microm -1.7 microm spectral regime is described. The sensor utilizes anamorphic fore-optics that partially decouple image formation along the spatial and spectral axes of the instrument. This design benefits from a reduction in complexity over standard high-performance spectrometer optical designs while maintaining excellent aberration control and spatial and spectral distortion characteristics. The stray light performance characteristics of the anamorphic imaging spectrometer were measured using the spectral irradiance and radiance responsivity calibrations using uniform sources (SIRCUS) facility at the National Institute of Standards and Technology (NIST). A description of the measurements and results are presented. Additionally, a stray-light matrix was assembled for the instrument to improve the instrument's spectral accuracy. Transmittance of a silicon wafer was measured to validate this approach.

  1. Stern-Gerlach effect and spin separation in InGaAs nanstructures

    NASA Astrophysics Data System (ADS)

    Kohda, Makoto

    2013-03-01

    The demonstration of quantized spin splitting by Stern and Gerlach in 1922 is one of the most important experiments in modern physics. We utilized an effective non-uniform magnetic field which originates from Rashba spin orbit interaction (SOI) and demonstrated an experimental manifestation of electronic Stern-Gerlach spin separation in InGaAs based quantum point contacts (QPCs). Lateral potential confinement in a trench-type QPC creates a spatial modulation of Rashba SOI inducing a spin dependent force Clear conductance plateaus are observed in steps of 2e2/ hwhen the strength of Rashba SOI becomes small. However, when the Rashba SOI is enhanced by applying the top gate, a half-integer plateau additionally appears at 0.5(2e2 / h) , indicating the spin polarized current. We found that the spin polarization of the conduction electrons in this plateau is as high as 70%. Our new approach for generating spin polarization in semiconductor nanostructures provides a way to seamlessly integrate electrical spin generation, manipulation, and detection in a single semiconductor device without the need for either external magnetic fields or magnetic materials. This work was supported in part by the PRESTO of the Japan Science and Technology Agency and by Grant-in-Aids from Japan Society for the Promotion of Science

  2. Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Peng, C. K.; Chen, J.; Chyi, J.; Morkoc, H.

    1988-01-01

    Extremely low alloyed and nonalloyed ohmic contact resistances have been formed on n-type InAs/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As structures grown on InP(Fe) by molecular-beam epitaxy. To insure the accuracy of the small contact resistances measured, an extended transmission line model was used to extrapolate contact resistances from test patterns with multiple gap spacings varying from 1 to 20 microns. For a 150-A-thick InAs layer doped to 2 x 10 to the 18th/cu cm and a 0.1-micron-thick InGaAs layer doped to 1 x 10 to the 18th/cu cm, a specific contact resistance of 2.6 x 10 to the -8th ohm-asterisk sq cm was measured for the nonalloyed contact, while a resistance less than 1.7 x 10 to the -8th ohm-asterisk sq cm is reported for the alloyed contact. Conventional Au-Ge/Ni/Au was used for the ohmic metal contact and alloying was performed at 500 C for 50 s in flowing H2. Using a thermionic field emission model, the barrier height at the InAs/InGaAs interface was calculated to be 20 meV.

  3. Synthesis of water-soluble Ag₂Se QDs as a novel resonance Rayleigh scattering sensor for highly sensitive and selective ConA detection.

    PubMed

    Yan, Shuguang; Zhang, Lichun; Tang, Yurong; Lv, Yi

    2014-09-01

    Ag2Se quantum dots (QDs) have attracted a lot of interest due to their potential applications in biosensing and bioimaging. A strategy is presented that involves coupling of selenium powder reduction with the binding of silver ions, and thioglycollic acid (TGA) and glycine as stabilizers to obtain ultrasmall Ag2Se QDs at 85 °C in aqueous solution. This strategy avoids high temperatures, high pressures and organic solvents so that water-soluble 3 nm Ag2Se QDs can be directly obtained. The conjugation of ConA to TGA stabilized Ag2Se QDs by hydrogen bonds leads to the adsorption of ConA to Ag2Se QDs and forms the aggregation and leads to the generation of resonance Rayleigh scattering (RRS) as a readout signal for the sensing events. The reaction mechanism of Ag2Se QD RRS enhancement is studied in this work. The resulting RRS sensor enables the detection of ConA with limit of detection reaching 0.08 μg mL(-1) concentration in a wide linear range from 0.27 μg mL(-1) to 35 μg mL(-1). The recovery of spiked ConA in human serum samples ranges from 94% to 106%. The relative standard deviation (RSD) for eleven replicate detections is 3.6%. Our results correlate many important experimental observations and will fuel the further growth of this field.

  4. Efficient double-quenching of electrochemiluminescence from CdS:Eu QDs by hemin-graphene-Au nanorods ternary composite for ultrasensitive immunoassay

    PubMed Central

    Liu, Jing; Cui, Meirong; Zhou, Hong; Zhang, Shusheng

    2016-01-01

    A novel ternary composite of hemin-graphene-Au nanorods (H-RGO-Au NRs) with high electrocatalytic activity was synthesized by a simple method. And this ternary composite was firstly used in construction of electrochemiluminescence (ECL) immunosensor due to its double-quenching effect of quantum dots (QDs). Based on the high electrocatalytic activity of ternary complexes for the reduction of H2O2 which acted as the coreactant of QDs-based ECL, as a result, the ECL intensity of QDs decreased. Besides, due to the ECL resonance energy transfer (ECL-RET) strategy between the large amount of Au nanorods (Au NRs) on the ternary composite surface and the CdS:Eu QDs, the ECL intensity of QDs was further quenched. Based on the double-quenching effect, a novel ultrasensitive ECL immunoassay method for detection of carcinoembryonic antigen (CEA) which is used as a model biomarker analyte was proposed. The designed immunoassay method showed a linear range from 0.01 pg mL−1 to 1.0 ng mL−1 with a detection limit of 0.01 pg mL−1. The method showing low detection limit, good stability and acceptable fabrication reproducibility, provided a new approach for ECL immunoassay sensing and significant prospect for practical application. PMID:27460868

  5. Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

    NASA Astrophysics Data System (ADS)

    Mohandas, Reshma A.; Freeman, Joshua R.; Rosamond, Mark C.; Hatem, Osama; Chowdhury, Siddhant; Ponnampalam, Lalitha; Fice, Martyn; Seeds, Alwyn J.; Cannard, Paul J.; Robertson, Michael J.; Moodie, David G.; Cunningham, John E.; Davies, A. Giles; Linfield, Edmund H.; Dean, Paul

    2016-04-01

    We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.

  6. Generation of reactive oxygen species from 5-aminolevulinic acid and Glutamate in cooperation with excited CdSe/ZnS QDs

    NASA Astrophysics Data System (ADS)

    Duong, Hong Dinh; Lee, Jee Won; Rhee, Jong Il

    2014-08-01

    CdSe/ZnS quantum dots (QDs) can be joined in the reductive pathway involving the electron transfer to an acceptor or in the oxidative pathway involving the hole transfer to a donor. They were exploited in the oxidation reactions of 5-aminolevulinic acid (ALA) and glutamate (GLU) for the generation of reactive oxygen species (ROS) such as hydroxyl radical (HO●) and superoxide anion (O2 ● -). Fast and highly efficient oxidation reactions of ALA to produce HO● and of GLU to produce O2 ●- were observed in the cooperation of mercaptopropionic acid (MPA)-capped CdSe/ZnS QDs under LED irradiation. Fluorescence spectroscopy and electron spin resonance (ESR) spectroscopy were used to evaluate the generation of different forms of ROS. Confocal fluorescent microscopic images of the size and morphology of HeLa cells confirmed the ROS generation from ALA or GLU in cooperation with CdSe/ZnS QDs under LED irradiation.

  7. Components-dependent optical nonlinearity in a series of CdSexS1-x and CdSexS1-x/ZnS QDs

    NASA Astrophysics Data System (ADS)

    Zhao, Shunlong; Wu, Feng; Zhang, Siwen; Wang, Qian; Li, Songtao; Cheng, Xiaoman

    2016-08-01

    The different compositions of the ternary alloyed CdSexS1-x and CdSexS1-x/ZnS core/shell quantum dots(CSQDs) have been synthesized by the chemical routes. The nonlinear optical properties of these QDs were investigated using Z-scan technique under the excitation of the 1064 nm picosecond laser pulse. The Z-scan results reveal that the nonlinear refractive indices of these QDs can be tuned by changing the ratio of Se and S components. Nonlinear optical (NLO) properties have been shown to be enhanced in CSQDs as compared to their core semiconductor counterparts. These QDs exhibit the components-tuned nonlinear refraction indices, which lead to a wide application in the photonic field.

  8. COUGAR: a liquid nitrogen cooled InGaAs camera for astronomy and electro-luminescence

    NASA Astrophysics Data System (ADS)

    Van Bogget, Urbain; Vervenne, Vincent; Vinella, Rosa Maria; van der Zanden, Koen; Merken, Patrick; Vermeiren, Jan

    2014-06-01

    A SWIR FPA was designed and manufactured with 640*512 pixels, 20 μm pitch and InGaAs detectors for electroluminescence characterization and astronomical applications in the [0.9 - 1.55 μm] range. The FPA is mounted in a liquid nitrogen dewar and is operated by a low noise frontend electronics. One of the biggest problem in designing sensors and cameras for electro-luminescence measurements is the autoillumination of the detectors by the readout circuit. Besides of proper shielding of the detectors, the ROIC shall be optimized for minimal electrical activity during the integration time of the very-weak signals coming from the circuit under test. For this reason a SFD (or Source Follower per Detector) architecture (like in the Hawaii sensor) was selected, resulting in a background limited performance of the detector. The pixel has a (somewhat arbitrary) full well capacity of 400 000 e- and a sensitivity of 2.17 μV/e-. The dark signal is app. 1 e-/pixel/sec and with the appropriate Fowler sampling the dark noise lowers below 5 e-rms. The power consumption of the circuit is limited 2 mW, allowing more than 24 hours of operation on less than 1 l of liquid nitrogen. The FPA is equipped with 4 outputs (optional readout on one single channel) and is capable of achieving 3 frames per second. Due to the non-destructive readout it is possible to determine in a dynamic way the optimal integration time for each observation. The Cougar camera is equipped with ultra-low noise power supply and bias lines; the electronics contain also a 24 bit AD converter to fully exploit the sensitivity of the FPA and the camera.

  9. Imaging Early Demineralization on Tooth Occlusal Surfaces with a High Definition InGaAs Camera

    PubMed Central

    Fried, William A.; Fried, Daniel; Chan, Kenneth H.; Darling, Cynthia L.

    2013-01-01

    In vivo and in vitro studies have shown that high contrast images of tooth demineralization can be acquired in the near-IR due to the high transparency of dental enamel. The purpose of this study is to compare the lesion contrast in reflectance at near-IR wavelengths coincident with high water absorption with those in the visible, the near-IR at 1300-nm and with fluorescence measurements for early lesions in occlusal surfaces. Twenty-four human molars were used in this in vitro study. Teeth were painted with an acid-resistant varnish, leaving a 4×4 mm window in the occlusal surface of each tooth exposed for demineralization. Artificial lesions were produced in the exposed windows after 1 & 2-day exposure to a demineralizing solution at pH 4.5. Lesions were imaged using NIR reflectance at 3 wavelengths, 1310, 1460 and 1600-nm using a high definition InGaAs camera. Visible light reflectance, and fluorescence with 405-nm excitation and detection at wavelengths greater than 500-nm were also used to acquire images for comparison. Crossed polarizers were used for reflectance measurements to reduce interference from specular reflectance. The contrast of both the 24 hr and 48 hr lesions were significantly higher (P<0.05) for NIR reflectance imaging at 1460-nm and 1600-nm than it was for NIR reflectance imaging at 1300-nm, visible reflectance imaging, and fluorescence. The results of this study suggest that NIR reflectance measurements at longer near-IR wavelengths coincident with higher water absorption are better suited for imaging early caries lesions. PMID:24357911

  10. Imaging early demineralization on tooth occlusional surfaces with a high definition InGaAs camera

    NASA Astrophysics Data System (ADS)

    Fried, William A.; Fried, Daniel; Chan, Kenneth H.; Darling, Cynthia L.

    In vivo and in vitro studies have shown that high contrast images of tooth demineralization can be acquired in the near-IR due to the high transparency of dental enamel. The purpose of this study is to compare the lesion contrast in reflectance at near-IR wavelengths coincident with high water absorption with those in the visible, the near-IR at 1300-nm and with fluorescence measurements for early lesions in occlusal surfaces. Twenty-four human molars were used in this in vitro study. Teeth were painted with an acidresistant varnish, leaving a 4×4 mm window in the occlusal surface of each tooth exposed for demineralization. Artificial lesions were produced in the exposed windows after 1 and 2-day exposure to a demineralizing solution at pH 4.5. Lesions were imaged using NIR reflectance at 3 wavelengths, 1310, 1460 and 1600-nm using a high definition InGaAs camera. Visible light reflectance, and fluorescence with 405-nm excitation and detection at wavelengths greater than 500-nm were also used to acquire images for comparison. Crossed polarizers were used for reflectance measurements to reduce interference from specular reflectance. The contrast of both the 24 hr and 48 hr lesions were significantly higher (P<0.05) for NIR reflectance imaging at 1460-nm and 1600-nm than it was for NIR reflectance imaging at 1300-nm, visible reflectance imaging, and fluorescence. The results of this study suggest that NIR reflectance measurements at longer near-IR wavelengths coincident with higher water absorption are better suited for imaging early caries lesions.

  11. Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors integrated on a single chip

    SciTech Connect

    Popov, V. V.; Yermolaev, D. M.; Shapoval, S. Yu.; Maremyanin, K. V.; Gavrilenko, V. I.; Zemlyakov, V. E.; Bespalov, V. A.; Yegorkin, V. I.; Maleev, N. A.; Ustinov, V. M.

    2014-04-21

    A tightly concatenated chain of InGaAs field-effect transistors with an asymmetric T-gate in each transistor demonstrates strong terahertz photovoltaic response without using supplementary antenna elements. We obtain the responsivity above 1000 V/W and up to 2000 V/W for unbiased and drain-biased transistors in the chain, respectively, with the noise equivalent power below 10{sup −11} W/Hz{sup 0.5} in the unbiased mode of the detector operation.

  12. Enhanced DSSCs efficiency via Cooperate co-absorbance (CdS QDs) and plasmonic core-shell nanoparticle (Ag@PVP)

    PubMed Central

    Amiri, Omid; Salavati-Niasari, Masoud; Bagheri, Samira; Yousefi, Amin Termeh

    2016-01-01

    This paper describes cooperate the co-absorbance (CdS QDs) and the plasmonic core-shell nanoparticles (Ag@PVP) of dye synthesized solar cells in which CdS QDs and Ag@PVP are incorporated into the TiO2 layer. Cooperative nanoparticles show superior behavior on enhancing light absorption in comparison with reference cells. Cooperated DSSC exhibits the best performance with the power conversion efficiency of 7.64% which is superior to that of the free–modified DSSC with the PCE of 5%. Detailed studies offer an effective approach to enhance the efficiency of dye synthesized solar cells. PMID:27143126

  13. Enhanced DSSCs efficiency via Cooperate co-absorbance (CdS QDs) and plasmonic core-shell nanoparticle (Ag@PVP)

    NASA Astrophysics Data System (ADS)

    Amiri, Omid; Salavati-Niasari, Masoud; Bagheri, Samira; Yousefi, Amin Termeh

    2016-05-01

    This paper describes cooperate the co-absorbance (CdS QDs) and the plasmonic core-shell nanoparticles (Ag@PVP) of dye synthesized solar cells in which CdS QDs and Ag@PVP are incorporated into the TiO2 layer. Cooperative nanoparticles show superior behavior on enhancing light absorption in comparison with reference cells. Cooperated DSSC exhibits the best performance with the power conversion efficiency of 7.64% which is superior to that of the free-modified DSSC with the PCE of 5%. Detailed studies offer an effective approach to enhance the efficiency of dye synthesized solar cells.

  14. Surface analysis of InP and InGaAs after low temperature diffusion of Zinc

    NASA Astrophysics Data System (ADS)

    Le Goff, Florian; Mathiot, Daniel; Decobert, Jean; Le Goec, Jean-Pierre; Parillaud, Olivier; Reverchon, Jean-Luc

    2016-09-01

    In order to develop III–V based devices integrated directly above post-processed silicon wafers, low temperature diffusion of zinc in n-type InP and InGaAs is studied at compatible temperatures, below 425 oC. We particularly focus on the resulting surface degradation. Efficient Zn diffusion is obtained for InGaAs samples, where the surface remains mirror-like after thermal treatment. Conversely, no significant diffusion occurs in InP where the surface is deeply deteriorated. The stability study for InP under thermal annealing in various ambients allows us to rule out thermal dephosphorization as the main cause of the surface degradation. On the basis of experimental observations and thermodynamic considerations, it is suggested that InP degradation is linked to the direct interaction of Zn and P, inducing the formation of parasitic Zn x P2 alloys, which also hinders the efficient diffusion of Zn into the InP substrate.

  15. Analysis of high frame rate readout circuit for near-infrared InGaAs focal plane array

    NASA Astrophysics Data System (ADS)

    Huang, Zhangcheng; Chen, Yu; Huang, Songlei; Fang, Jiaxiong

    2013-09-01

    High frame rate imaging for applications such as meteorological forecast, motion target tracking require high-speed Read-Out Integrated Circuit (ROIC). In order to achieve 10 KHz of frame rate, this paper analyzes the bandwidth of Capacitive-feedback Trans-Impedance Amplifier (CTIA) in ROIC which is the dominant bandwidth-limiting node when interfaced with large InGaAs detector pixel capacitance of about 10pF. A small-signal model is presented to study the relationship between integration capacitance, detector capacitance, transconductance and CTIA bandwidth. Calculation and simulation results show explicitly how the series resistance at the interface restricts the frame rate of Focal Plane Arrays (FPA). In order to achieve low-noise performance at a high frame rate, this paper describes an optimal solution in ROIC design. A prototype ROIC chip (DL7) has been fabricated with 0.5-μm mixed signal CMOS process and interfaced with InGaAs detector arrays. Test results show that frame rate is above 10 KHz and ROIC noise is around 270 e-, near identical to the design value.

  16. Surface analysis of InP and InGaAs after low temperature diffusion of Zinc

    NASA Astrophysics Data System (ADS)

    Le Goff, Florian; Mathiot, Daniel; Decobert, Jean; Le Goec, Jean-Pierre; Parillaud, Olivier; Reverchon, Jean-Luc

    2016-09-01

    In order to develop III-V based devices integrated directly above post-processed silicon wafers, low temperature diffusion of zinc in n-type InP and InGaAs is studied at compatible temperatures, below 425 oC. We particularly focus on the resulting surface degradation. Efficient Zn diffusion is obtained for InGaAs samples, where the surface remains mirror-like after thermal treatment. Conversely, no significant diffusion occurs in InP where the surface is deeply deteriorated. The stability study for InP under thermal annealing in various ambients allows us to rule out thermal dephosphorization as the main cause of the surface degradation. On the basis of experimental observations and thermodynamic considerations, it is suggested that InP degradation is linked to the direct interaction of Zn and P, inducing the formation of parasitic Zn x P2 alloys, which also hinders the efficient diffusion of Zn into the InP substrate.

  17. Border trap reduction in Al{sub 2}O{sub 3}/InGaAs gate stacks

    SciTech Connect

    Tang, Kechao; McIntyre, Paul C.; Winter, Roy; Eizenberg, Moshe; Zhang, Liangliang; Droopad, Ravi

    2015-11-16

    The effect of Al{sub 2}O{sub 3} atomic layer deposition (ALD) temperature on the border trap density (N{sub bt}) of Al{sub 2}O{sub 3}/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces N{sub bt}. The reduction of N{sub bt} coincides with increased hydrogen incorporation in low temperature ALD-grown Al{sub 2}O{sub 3} films during post-gate metal forming gas annealing. It is also found that large-dose (∼6000 L) exposure of the In{sub 0.53}Ga{sub 0.47}As (100) surface to TMA immediately after thermal desorption of a protective As{sub 2} capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al{sub 2}O{sub 3}/InGaAs samples made at low ALD temperatures.

  18. An uncooled 1280 x 1024 InGaAs focal plane array for small platform, shortwave infrared imaging

    NASA Astrophysics Data System (ADS)

    Battaglia, J.; Blessinger, M.; Enriquez, M.; Ettenberg, M.; Evans, M.; Flynn, K.; Lin, M.; Passe, J.; Stern, M.; Sudol, T.

    2009-05-01

    The increasing demand for short wave infrared (SWIR) imaging technology for soldier-based and unmanned platforms requires camera systems where size, weight and power consumption are minimized without loss of performance. Goodrich, Sensors Unlimited Inc. reports on the development of a novel focal plane (FPA) array for DARPA's MISI (Micro-Sensors for Imaging) Program. This large format (1280 x 1024) array is optimized for day/night imaging in the wavelength region from 0.4 μm to 1.7 μm and consists of an InGaAs detector bump bonded to a capacitance transimpedance amplifier (CTIA)-based readout integrated circuit (ROIC) on a compact 15 μm pixel pitch. Two selectable integration capacitors provide for high dynamic range with low (< 50 electrons) noise, and expanded onchip ROIC functionality includes analog-to-digital conversion and temperature sensing. The combination of high quality, low dark current InGaAs with temperature-parameterized non-uniformity correction allows operation at ambient temperatures while eliminating the need for thermoelectric cooling. The resulting lightweight, low power implementation is suitable for man-portable and UAV-mounted applications.

  19. Highly luminescent InP/GaP/ZnS QDs emitting in the entire color range via a heating up process

    PubMed Central

    Park, Joong Pill; Lee, Jae-Joon; Kim, Sang-Wook

    2016-01-01

    InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization efforts successfully. Herein, we introduce a simple synthetic method for InP/GaP/ZnS core/shell/shell QDs via a heating process. The reaction was completed within 0.5 h and a full color range from blue to red was achieved. For emitting blue color, t-DDT was applied to prevent particle growth. From green to orange, color variation was achieved by adjusting the quantity of myristic acid. Utilizing large quantities of gallium chloride led to red color. With this method, we produced high-quality InP/GaP/ZnS QDs (blue QY: ~40%, FWHM: 50 nm; green QY: ~85%, FWHM: 41 nm; red QY: ~60%, FWHM: 65 nm). We utilized t-DDT as a new sulfur source. Compared with n-DDT, t-DDT was more reactive, which allowed for the formation of a thicker shell. PMID:27435428

  20. Highly luminescent InP/GaP/ZnS QDs emitting in the entire color range via a heating up process.

    PubMed

    Park, Joong Pill; Lee, Jae-Joon; Kim, Sang-Wook

    2016-01-01

    InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization efforts successfully. Herein, we introduce a simple synthetic method for InP/GaP/ZnS core/shell/shell QDs via a heating process. The reaction was completed within 0.5 h and a full color range from blue to red was achieved. For emitting blue color, t-DDT was applied to prevent particle growth. From green to orange, color variation was achieved by adjusting the quantity of myristic acid. Utilizing large quantities of gallium chloride led to red color. With this method, we produced high-quality InP/GaP/ZnS QDs (blue QY: ~40%, FWHM: 50 nm; green QY: ~85%, FWHM: 41 nm; red QY: ~60%, FWHM: 65 nm). We utilized t-DDT as a new sulfur source. Compared with n-DDT, t-DDT was more reactive, which allowed for the formation of a thicker shell. PMID:27435428

  1. Highly luminescent InP/GaP/ZnS QDs emitting in the entire color range via a heating up process

    NASA Astrophysics Data System (ADS)

    Park, Joong Pill; Lee, Jae-Joon; Kim, Sang-Wook

    2016-07-01

    InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization efforts successfully. Herein, we introduce a simple synthetic method for InP/GaP/ZnS core/shell/shell QDs via a heating process. The reaction was completed within 0.5 h and a full color range from blue to red was achieved. For emitting blue color, t-DDT was applied to prevent particle growth. From green to orange, color variation was achieved by adjusting the quantity of myristic acid. Utilizing large quantities of gallium chloride led to red color. With this method, we produced high-quality InP/GaP/ZnS QDs (blue QY: ~40%, FWHM: 50 nm green QY: ~85%, FWHM: 41 nm red QY: ~60%, FWHM: 65 nm). We utilized t-DDT as a new sulfur source. Compared with n-DDT, t-DDT was more reactive, which allowed for the formation of a thicker shell.

  2. Photoluminescence quantum yields of PbSe and PbS QDs in the range of 1000 nm to 2000 nm (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Beard, Matthew C.; Semonin, Octavi E.; Johnson, Justin C.; Marshall, Ashley; Zhang, Jianbing; Chernomordik, Boris D.

    2016-03-01

    PbS and PbSe quantum dots (QDs) are promising strong infrared emitters. We have developed several synthetic routes to producing PbS and PbSe QDs with a variety of sizes such that the bandgap can be continuously tuned from 2000 to 1000 nm. We provide a simple and accurate synthetic route to reproducibly produce PbS QDs with a narrow size-distribution and high chemical yield. The different synthetic routes lead to differences in their surface chemistry and to differences in their air stability and photoluminescence quantum yields (PLQY). To characterize the PLQY we directly measured the PLQY IR-26 (a standard IR emitting organic dye) at a range of concentrations as well as the PLQY of PbS and PbSe QDs for a range of sizes. We find that the PLQY of IR-26 has a weak concentration dependence due to reabsorption, with a PLQY of 0:048_0:002% for low concentrations, lower than previous reports by a full order of magnitude. We also find a dramatic size dependence for both PbS and PbSe QDs, with the smallest dots exhibiting a PLQY in excess of 60% while larger dots fall below 3%. A model, including nonradiative transition between electronic states and energy transfer to ligand vibrations, appears to explain this size dependence. These findings provide both a better characterization of photoluminescence for near infrared emitters. Halogen surface passivation provides both a larger PLQY (~ 30% improvement) as well as increased air stability.

  3. The relationship between photoluminescence (PL) decay and crystal growth kinetics in thioglycolic acid (TGA) capped CdTe quantum dots (QDs).

    PubMed

    Lv, Xiangying; Xue, Xiaogang; Huang, Yang; Zhuang, Zanyong; Lin, Zhang

    2014-06-21

    The PL lifetime optimization of CdTe QDs capped with TGA has yet to be understood from a perspective of growth kinetics. In this work, the growth kinetics and PL properties of CdTe QDs growing in aqueous solutions of two TGA concentrations, 0 mM and 57 mM, were systematically investigated using UV, TEM, and PL methods. CdTe QDs in 0 mM TGA solution were found to follow the mixed OA (Oriented Attachment)-OR (Ostwald Ripening) growth kinetics. The PL peaks experienced a red-shift with almost unchanged intensity and the PL lifetimes increased gradually. In 57 mM TGA solution, the QDs followed the OA dominated growth mechanism. The PL peak broadened greatly with a red-shift and its intensity decreased significantly. The PL lifetime increased much higher than that in 0 mM TGA solution. Based on the different growth kinetic models of the two systems, we suggest that in the low (0 mM) TGA solution, the increased surface defects induced by TGA desorption and the existence of partial internal defects caused by OA growth were the main reasons for the gradual increase of PL lifetime, while in high (57 mM) TGA solution, the increase of PL lifetime was ascribed to the abundant internal defects produced by OA collision. Finally, kinetic data showed the effect of the TGA concentration on crystal growth and PL lifetime of CdTe QDs. The results might provide guidance for understanding the mechanism behind the phenomena of ligand-related PL properties.

  4. Time-resolved spectroscopy of low-dimensional semiconductor structures

    NASA Astrophysics Data System (ADS)

    Murphy, Joseph R.

    This dissertation is a survey of ultrafast time-resolved optical measurements conducted on a variety of low-dimensional semiconductor systems to further the understanding of the dynamic behavior in the following systems: ZnMnTe/ZnSe quantum dots, ZnTe/ZnMnSe quantum dots, InGaAs quantum wells, CdMnSe colloidal quantum dots, multi-shell CdSe/CdMnS/CdS colloidal nanoplatelets, and graphene and graphene-related solutions and films. Using time-resolved photoluminescence to study epitaxially-grown ZnTe and ZnMnTe quantum dots in corresponding ZnMnSe and ZnSe matrices, the location dependence of manganese ions in respect to magnetic polaron formation is shown. The structure with manganese ions located in the matrix exhibited magnetic polaron behavior consistent with previous literature, whereas the structure with the magnetic ions located within the quantum dots exhibited unconventional magnetic polaron properties. These properties, including temperature and magnetic field insensitivity, were explained through the use of a model that predicted an increased internal magnetic field due to a decreased effective volume of the magnetic polaron and a higher effective temperature due to laser heating. Magneto-time-resolved photoluminescence measurements on a system of colloidal CdMnSe quantum dots show that the magnetic polaron properties differ significantly from the epitaxially grown quantum dots. First the timescales at which the magnetic polaron forms and the polarization saturates are different by more than an order of magnitude, and second, the magnetic polaron energy exhibited step-like behavior as the strength of the externally applied magnetic field is increased. The field dependent MP formation energy that is observed experimentally is explained as due to the breaking of the antiferromagnetic coupling of Mn dimers within the QDs. This model is further verified by the observation of quantized behavior in the Zeeman energy splitting. Through the use of magneto

  5. Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.

    PubMed

    Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev

    2016-06-27

    We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer

  6. Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.

    PubMed

    Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev

    2016-06-27

    We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer

  7. Growth-temperature dependence of optical spin-injection dynamics in self-assembled InGaAs quantum dots

    SciTech Connect

    Yamamura, Takafumi; Kiba, Takayuki; Yang, Xiaojie; Takayama, Junichi; Subagyo, Agus; Sueoka, Kazuhisa; Murayama, Akihiro

    2014-09-07

    The growth-temperature dependence of the optical spin-injection dynamics in self-assembled quantum dots (QDs) of In{sub 0.5}Ga{sub 0.5}As was studied by increasing the sheet density of the dots from 2 × 10{sup 10} to 7 × 10{sup 10} cm{sup −2} and reducing their size through a decrease in growth temperature from 500 to 470 °C. The circularly polarized transient photoluminescence (PL) of the resulting QD ensembles was analyzed after optical excitation of spin-polarized carriers in GaAs barriers by using rate equations that take into account spin-injection dynamics such as spin-injection time, spin relaxation during injection, spin-dependent state-filling, and subsequent spin relaxation. The excitation-power dependence of the transient circular polarization of PL in the QDs, which is sensitive to the state-filling effect, was also examined. It was found that a systematic increase occurs in the degree of circular polarization of PL with decreasing growth temperature, which reflects the transient polarization of exciton spin after spin injection. This is attributed to strong suppression of the filling effect for the majority-spin states as the dot-density of the QDs increases.

  8. Efficient eco-friendly inverted quantum dot sensitized solar cells† †Electronic supplementary information (ESI) available: TEM images of QDs, XPS spectra, UV-vis and PL spectra of the sensitized electrodes, details about photophysical characterization and IPCE spectra interpretation. See DOI: 10.1039/c5ta06769c Click here for additional data file.

    PubMed Central

    Park, Jinhyung; Sajjad, Muhammad T.; Jouneau, Pierre-Henri; Ruseckas, Arvydas; Faure-Vincent, Jérôme; Reiss, Peter

    2016-01-01

    Recent progress in quantum dot (QD) sensitized solar cells has demonstrated the possibility of low-cost and efficient photovoltaics. However, the standard device structure based on n-type materials often suffers from slow hole injection rate, which may lead to unbalanced charge transport. We have fabricated efficient p-type (inverted) QD sensitized cells, which combine the advantages of conventional QD cells with p-type dye sensitized configurations. Moreover, p-type QD sensitized cells can be used in highly promising tandem configurations with n-type ones. QDs without toxic Cd and Pb elements and with improved absorption and stability were successfully deposited onto mesoporous NiO electrode showing good coverage and penetration according to morphological analysis. Detailed photophysical charge transfer studies showed that high hole injection rates (108 s–1) observed in such systems are comparable with electron injection in conventional n-type QD assemblies. Inverted solar cells fabricated with various QDs demonstrate excellent power conversion efficiencies of up to 1.25%, which is 4 times higher than the best values for previous inverted QD sensitized cells. Attempts to passivate the surface of the QDs show that traditional methods of reduction of recombination in the QD sensitized cells are not applicable to the inverted architectures. PMID:27478616

  9. Sensitivity and noise of micro-Hall magnetic sensors based on InGaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Chenaud, B.; Segovia-Mera, A.; Delgard, A.; Feltin, N.; Hoffmann, A.; Pascal, F.; Zawadzki, W.; Mailly, D.; Chaubet, C.

    2016-01-01

    We study the room-temperature performance of micro-Hall magnetic sensors based on pseudomorphic InGaAs quantum wells. Active areas of our sensors range from 1 to 80 μm. We focus on the smallest detectable magnetic fields in small sensors and perform a systematic study of noise at room temperature in the frequency range between 1 Hz and 100 kHz. Our data are interpreted by the mobility fluctuation model. The Hooge parameter is determined for the applied technology. We show that, independently of the experimental frequency, the ratio of sensitivity to noise is proportional to characteristic length of the sensor. The resolution of 1 mG/√{Hz } is achievable in a 3 μm sensor at room temperature.

  10. An InGaAs detector based radiation thermometer and fixed-point blackbodies for temperature scale realization at NIM

    SciTech Connect

    Hao, X.; Yuan, Z.; Wang, J.; Lu, X.

    2013-09-11

    In this paper, we describe an InGaAs detector based radiation thermometer (IRT) and new design of fixed-point blackbodies, including Sn, Zn, Al and Cu, for the establishment of a temperature scale from 200 °C to 1085 °C at the National Institute of Metrology of China. The construction and calibration of the IRT with the four fixed-point blackbodies are described. Characteristics of the IRT, such as the size-of-source effect, the amplifier performance and its stability are determined. The design of the four fixed-points, with 10 mm diameter of aperture and 0.9999 emissivity, is described. The uncertainty of the scale realization is elaborated.

  11. An InGaAs detector based radiation thermometer and fixed-point blackbodies for temperature scale realization at NIM

    NASA Astrophysics Data System (ADS)

    Hao, X.; Yuan, Z.; Wang, J.; Lu, X.

    2013-09-01

    In this paper, we describe an InGaAs detector based radiation thermometer (IRT) and new design of fixed-point blackbodies, including Sn, Zn, Al and Cu, for the establishment of a temperature scale from 200 °C to 1085 °C at the National Institute of Metrology of China. The construction and calibration of the IRT with the four fixed-point blackbodies are described. Characteristics of the IRT, such as the size-of-source effect, the amplifier performance and its stability are determined. The design of the four fixed-points, with 10 mm diameter of aperture and 0.9999 emissivity, is described. The uncertainty of the scale realization is elaborated.

  12. Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission

    NASA Astrophysics Data System (ADS)

    Brennan, B.; Hughes, G.

    2010-09-01

    A high resolution synchrotron radiation core level photoemission study of the native oxides on In0.53Ga0.47As was carried out in order to determine the various oxidation states present on the surface. The thermal stability of the oxidation states was also investigated by annealing the samples in vacuum at temperatures ranging from 150 to 450 °C. As well as the widely reported oxidation states, various arsenic, gallium, and indium oxides, along with mixed phase gallium arsenic and indium gallium oxides are identified. Elemental binary oxides have been identified as residing at the oxide substrate interface and could play an important role in understanding the growth of metal oxide dielectric layers on the InGaAs surface, due to their apparent chemical stability.

  13. High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate

    SciTech Connect

    Liu, S. Q.; Han, Q.; Zhu, B.; Yang, X. H.; Wang, X.; Wang, J.; Wang, X. P.; Ni, H. Q.; He, J. F.; Li, M. F.; Zhu, Y.; Niu, Z. C.

    2011-05-16

    In this letter, we demonstrated a top illuminated 1.55 {mu}m metamorphic InGaAs resonant-cavity-enhanced p-i-n photodetector grown on GaAs substrate. The photodetectors were grown by a solid-source molecular beam epitaxy system. The high quality linearly graded In{sub x}Al{sub 0.4}Ga{sub 1-x-0.4}As metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3x10{sup -6} A/cm{sup 2} at 0 V and 4.2x10{sup -5} A/cm{sup 2} at a reverse bias of 5 V. A high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a -3 dB bandwidth up to 13 GHz were also obtained.

  14. Experimental demonstration of hot-carrier photo-current in an InGaAs quantum well solar cell

    SciTech Connect

    Hirst, L. C.; Walters, R. J.; Führer, M. F.; Ekins-Daukes, N. J.

    2014-06-09

    An unambiguous observation of hot-carrier photocurrent from an InGaAs single quantum well solar cell is reported. Simultaneous photo-current and photoluminescence measurements were performed for incident power density 0.04–3 kW cm{sup −2}, lattice temperature 10 K, and forward bias 1.2 V. An order of magnitude photocurrent increase was observed for non-equilibrium hot-carrier temperatures >35 K. This photocurrent activation temperature is consistent with that of equilibrium carriers in a lattice at elevated temperature. The observed hot-carrier photo-current is extracted from the well over an energy selective GaAs barrier, thus integrating two essential components of a hot-carrier solar cell: a hot-carrier absorber and an energy selective contact.

  15. Gain-switched pulses from InGaAs ridge-quantum-well lasers limited by intrinsic dynamical gain suppression.

    PubMed

    Chen, Shaoqiang; Yoshita, Masahiro; Ito, Takashi; Mochizuki, Toshimitsu; Akiyama, Hidefumi; Yokoyama, Hiroyuki

    2013-03-25

    Gain-switched pulses of InGaAs double-quantum-well lasers fabricated from identical epitaxial laser wafers were measured under both current injection and optical pumping conditions. The shortest output pulse widths were nearly identical (about 40 ps) both for current injection and optical pumping; this result attributed the dominant pulse-width limitation factor to the intrinsic gain properties of the lasers. We quantitatively compared the experimental results with theoretical calculations based on rate equations incorporating gain nonlinearities. Close consistency between the experimental data and the calculations was obtained only when we assumed a dynamically suppressed gain value deviated from the steady-state gain value supported by standard microscopic theories.

  16. New design of InGaAs guided-mode resonance photodiode for SWIR low dark current imaging

    NASA Astrophysics Data System (ADS)

    Verdun, Michaël.; Portier, Benjamin; Jaworowicz, Katarzyna; Jaeck, Julien; Dupuis, Christophe; Haidar, Riad; Pardo, Fabrice; Pelouard, Jean-Luc

    2016-04-01

    We investigate a full-dielectric guided mode resonant photodiode. It has been designed to enhance the absorption by excitation of several resonances in the SWIR domain. The device consists of an InP/InGaAs/InP P-i-N heterojunction containing an active layer as thin as 90 nm on top of a subwavelength lamellar grating and a gold mirror. We successfully compared the electro-optical characterizations of individual pixels with electro-magnetic simulations. In particular, we observe near perfect collection of the photo-carriers and external quantum efficiency (EQE) of up to 71% around 1.55 μm. Moreover, compared with InGaAs resonator state-of-the-art detector, we show a broader spectral response in the 1.2-1.7 μm range, thus paving the way for SWIR low dark current imaging.

  17. Compact fiber-pigtailed InGaAs photoconductive antenna module for terahertz-wave generation and detection.

    PubMed

    Han, Sang-Pil; Kim, Namje; Ko, Hyunsung; Ryu, Han-Cheol; Park, Jeong-Woo; Yoon, Young-Jong; Shin, Jun-Hwan; Lee, Dong Hun; Park, Sang-Ho; Moon, Seok-Hwan; Choi, Sung-Wook; Chun, Hyang Sook; Park, Kyung Hyun

    2012-07-30

    We propose a compact fiber-pigtailed InGaAs photoconductive antenna (FPP) module having an effective heat-dissipation solution as well as a module volume of less than 0.7 cc. The heat-dissipation of the FPP modules when using a heat-conductive printed circuit board (PCB) and an aluminium nitride (AlN) submount, without any cooling systems, improve by 40% and 85%, respectively, when compared with a photoconductive antenna chip on a conventional PCB. The AlN submount is superior to those previously reported as a heat-dissipation solution. Terahertz time-domain spectroscopy (THz-TDS) using the FPP module perfectly detects the absorption lines of water vapor in free space and an α-lactose sample. PMID:23038394

  18. Spectral imaging of chemical compounds using multivariate optically enhanced filters integrated with InGaAs VGA cameras

    NASA Astrophysics Data System (ADS)

    Priore, Ryan J.; Jacksen, Niels

    2016-05-01

    Infrared hyperspectral imagers (HSI) have been fielded for the detection of hazardous chemical and biological compounds, tag detection (friend versus foe detection) and other defense critical sensing missions over the last two decades. Low Size/Weight/Power/Cost (SWaPc) methods of identification of chemical compounds spectroscopy has been a long term goal for hand held applications. We describe a new HSI concept for low cost / high performance InGaAs SWIR camera chemical identification for military, security, industrial and commercial end user applications. Multivariate Optical Elements (MOEs) are thin-film devices that encode a broadband, spectroscopic pattern allowing a simple broadband detector to generate a highly sensitive and specific detection for a target analyte. MOEs can be matched 1:1 to a discrete analyte or class prediction. Additionally, MOE filter sets are capable of sensing an orthogonal projection of the original sparse spectroscopic space enabling a small set of MOEs to discriminate a multitude of target analytes. This paper identifies algorithms and broadband optical filter designs that have been demonstrated to identify chemical compounds using high performance InGaAs VGA detectors. It shows how some of the initial models have been reduced to simple spectral designs and tested to produce positive identification of such chemicals. We also are developing pixilated MOE compressed detection sensors for the detection of a multitude of chemical targets in challenging backgrounds/environments for both commercial and defense/security applications. This MOE based, real-time HSI sensor will exhibit superior sensitivity and specificity as compared to currently fielded HSI systems.

  19. Secondary coordination sphere accelerates hole transfer for enhanced hydrogen photogeneration from [FeFe]-hydrogenase mimic and CdSe QDs in water

    PubMed Central

    Wen, Min; Li, Xu-Bing; Jian, Jing-Xin; Wang, Xu-Zhe; Wu, Hao-Lin; Chen, Bin; Tung, Chen-Ho; Wu, Li-Zhu

    2016-01-01

    Achieving highly efficient hydrogen (H2) evolution via artificial photosynthesis is a great ambition pursued by scientists in recent decades because H2 has high specific enthalpy of combustion and benign combustion product. [FeFe]-Hydrogenase ([FeFe]-H2ase) mimics have been demonstrated to be promising catalysts for H2 photoproduction. However, the efficient photocatalytic H2 generation system, consisting of PAA-g-Fe2S2, CdSe QDs and H2A, suffered from low stability, probably due to the hole accumulation induced photooxidation of CdSe QDs and the subsequent crash of [FeFe]-H2ase mimics. In this work, we take advantage of supramolecular interaction for the first time to construct the secondary coordination sphere of electron donors (HA−) to CdSe QDs. The generated secondary coordination sphere helps realize much faster hole removal with a ~30-fold increase, thus leading to higher stability and activity for H2 evolution. The unique photocatalytic H2 evolution system features a great increase of turnover number to 83600, which is the highest one obtained so far for photocatalytic H2 production by using [FeFe]-H2ase mimics as catalysts. PMID:27417065

  20. Fluorescence ELISA for sensitive detection of ochratoxin A based on glucose oxidase-mediated fluorescence quenching of CdTe QDs.

    PubMed

    Liang, Yi; Huang, Xiaolin; Yu, Ruijin; Zhou, Yaofeng; Xiong, Yonghua

    2016-09-14

    The present study described a novel fluorescence enzyme-linked immunosorbent assay (ELISA) used to detect ochratoxin A (OTA) by using the glucose oxidase (GOx)-mediated fluorescence quenching of mercaptopropionic acid-capped CdTe quantum dots (MPA-QDs), in which GOx was used as an alternative to horseradish peroxidase (HRP) for the oxidization of glucose into hydrogen peroxide (H2O2) and gluconic acid. The MPA-QDs were used as a fluorescent signal output, whose fluorescence variation was extremely sensitive to the presence of H2O2 or hydrogen ions in the solution. Under the optimized conditions, the proposed fluorescence ELISA demonstrated a good linear detection of OTA in corn extract from 2.4 pg mL(-1) to 625 pg mL(-1) with a limit of detection of 2.2 pg mL(-1), which was approximately 15-fold lower than that of conventional HRP-based ELISA. Our developed fluorescence immunoassay was also similar to HRP-based ELISA in terms of selectivity, accuracy, and reproducibility. In summary, this study was the first to use the GOx-mediated fluorescence quenching of QDs in immunoassay to detect OTA, offering a new possibility for the analysis of other mycotoxins and biomolecules. PMID:27566355

  1. Constructing a MoS₂ QDs/CdS Core/Shell Flowerlike Nanosphere Hierarchical Heterostructure for the Enhanced Stability and Photocatalytic Activity.

    PubMed

    Liang, Shijing; Zhou, Zhouming; Wu, Xiuqin; Zhu, Shuying; Bi, Jinhong; Zhou, Limin; Liu, Minghua; Wu, Ling

    2016-01-01

    MoS₂ quantum dots (QDs)/CdS core/shell nanospheres with a hierarchical heterostructure have been prepared by a simple microwave hydrothermal method. The as-prepared samples are characterized by XRD, TEM, SEM, UV-VIS diffuse reflectance spectra (DRS) and N₂-sorption in detail. The photocatalytic activities of the samples are evaluated by water splitting into hydrogen. Results show that the as-prepared MoS₂ QDs/CdS core/shell nanospheres with a diameter of about 300 nm are composed of the shell of CdS nanorods and the core of MoS₂ QDs. For the photocatalytic reaction, the samples exhibit a high stability of the photocatalytic activity and a much higher hydrogen evolution rate than the pure CdS, the composite prepared by a physical mixture, and the Pt-loaded CdS sample. In addition, the stability of CdS has also been greatly enhanced. The effect of the reaction time on the formations of nanospheres, the photoelectric properties and the photocatalytic activities of the samples has been investigated. Finally, a possible photocatalytic reaction process has also been proposed. PMID:26891284

  2. Secondary coordination sphere accelerates hole transfer for enhanced hydrogen photogeneration from [FeFe]-hydrogenase mimic and CdSe QDs in water

    NASA Astrophysics Data System (ADS)

    Wen, Min; Li, Xu-Bing; Jian, Jing-Xin; Wang, Xu-Zhe; Wu, Hao-Lin; Chen, Bin; Tung, Chen-Ho; Wu, Li-Zhu

    2016-07-01

    Achieving highly efficient hydrogen (H2) evolution via artificial photosynthesis is a great ambition pursued by scientists in recent decades because H2 has high specific enthalpy of combustion and benign combustion product. [FeFe]-Hydrogenase ([FeFe]-H2ase) mimics have been demonstrated to be promising catalysts for H2 photoproduction. However, the efficient photocatalytic H2 generation system, consisting of PAA-g-Fe2S2, CdSe QDs and H2A, suffered from low stability, probably due to the hole accumulation induced photooxidation of CdSe QDs and the subsequent crash of [FeFe]-H2ase mimics. In this work, we take advantage of supramolecular interaction for the first time to construct the secondary coordination sphere of electron donors (HA‑) to CdSe QDs. The generated secondary coordination sphere helps realize much faster hole removal with a ~30-fold increase, thus leading to higher stability and activity for H2 evolution. The unique photocatalytic H2 evolution system features a great increase of turnover number to 83600, which is the highest one obtained so far for photocatalytic H2 production by using [FeFe]-H2ase mimics as catalysts.

  3. Secondary coordination sphere accelerates hole transfer for enhanced hydrogen photogeneration from [FeFe]-hydrogenase mimic and CdSe QDs in water.

    PubMed

    Wen, Min; Li, Xu-Bing; Jian, Jing-Xin; Wang, Xu-Zhe; Wu, Hao-Lin; Chen, Bin; Tung, Chen-Ho; Wu, Li-Zhu

    2016-01-01

    Achieving highly efficient hydrogen (H2) evolution via artificial photosynthesis is a great ambition pursued by scientists in recent decades because H2 has high specific enthalpy of combustion and benign combustion product. [FeFe]-Hydrogenase ([FeFe]-H2ase) mimics have been demonstrated to be promising catalysts for H2 photoproduction. However, the efficient photocatalytic H2 generation system, consisting of PAA-g-Fe2S2, CdSe QDs and H2A, suffered from low stability, probably due to the hole accumulation induced photooxidation of CdSe QDs and the subsequent crash of [FeFe]-H2ase mimics. In this work, we take advantage of supramolecular interaction for the first time to construct the secondary coordination sphere of electron donors (HA(-)) to CdSe QDs. The generated secondary coordination sphere helps realize much faster hole removal with a ~30-fold increase, thus leading to higher stability and activity for H2 evolution. The unique photocatalytic H2 evolution system features a great increase of turnover number to 83600, which is the highest one obtained so far for photocatalytic H2 production by using [FeFe]-H2ase mimics as catalysts. PMID:27417065

  4. Influence of interface traps inside the conduction band on the capacitance–voltage characteristics of InGaAs metal–oxide–semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Iida, Ryo; Takenaka, Mitsuru; Takagi, Shinichi

    2016-11-01

    We investigated the influences of the AC response with interface/bulk-oxide traps near the conduction band (CB) and a low effective density of states (DOS) on the accumulation capacitance C acc of an n-type InGaAs metal–oxide–semiconductor (MOS) capacitor. We found that the capacitance associated with the interface traps inside the CB significantly increases C acc compared to the C acc value constrained by a low DOS. These results indicate that accurate characterization inside the CB and considering the capacitance due to the interface traps inside the CB in the MOS capacitance–voltage curves are indispensable for accurate characterization of InGaAs MOS interface properties.

  5. Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs

    NASA Astrophysics Data System (ADS)

    Hatem, O.; Cunningham, J.; Linfield, E. H.; Wood, C. D.; Davies, A. G.; Cannard, P. J.; Robertson, M. J.; Moodie, D. G.

    2011-03-01

    We report the detection of terahertz frequency radiation using photoconductive antennas fabricated from Fe-doped InGaAs, grown by metal-organic chemical vapor deposition. Coherent photoconductive detection is demonstrated using femtosecond laser pulses centered at either an 800 or a 1550 nm wavelength. The InGaAs resistivity and the sensitivity of photoconductive detection are both found to depend on the Fe-doping level. We investigate a wide range of probe laser powers, finding a peak in detected signal for ˜5 mW probe power, followed by a reduction at larger powers, attributed to screening of the detected THz field by photo-generated carriers in the material. The measured signal from Fe:InGaAs photoconductive detectors excited at 800 nm is four times greater than that from a low-temperature-grown GaAs photodetector with identical antenna design, despite the use of a ten times smaller probe power.

  6. Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

    SciTech Connect

    Shin, H. S.; Yum, J. H.; Johnson, D. W.; Harris, H. R.; Hudnall, Todd W.; Oh, J.; Kirsch, P.; Wang, W.-E.; Bielawski, C. W.; Banerjee, S. K.; Lee, J. C.; Lee, H. D.

    2013-11-25

    In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.

  7. An efficient heat-spreader design: First demonstration on InGaP/graded InGaAs base/GaAs collector-up HBTs

    NASA Astrophysics Data System (ADS)

    Tseng, Hsien-Cheng; Chu, Wen-Jen

    2013-01-01

    An efficient heat-spreader design, demonstrated on n-p-n InGaP/graded InGaAs base/GaAs collector-up heterojunction bipolar transistors (HBTs) for the first time, is proposed to achieve high speed and thermal dissipation performances. The collector-up HBT, with a graded InGaAs base, has been successfully fabricated using a three-stage selective-area-regrowth technique. A unity-gain cutoff frequency fT = 55 GHz and a maximum frequency of oscillation fmax = 74 GHz were obtained from prototype devices with a large collector area of 3.5 × 40 μm2. Moreover, through proper thinning process, the maximum junction temperature and thermal coupling within the transistors were effectively decreased. It is shown that the thermal management for power amplifiers, based on the developed HBT, used in next-generation cellular phones can be enhanced.

  8. Toward a single-chip TECless/NUCless InGaAs SWIR camera with 120-dB intrinsic operation dynamic range

    NASA Astrophysics Data System (ADS)

    Ni, Y.; Arion, B.; Zhu, Y. M.; Potet, P.; Huet, Odile; Reverchon, Jean Luc; Truffer, Jean Patrick; Robo, Jean Alexandre; Costard, Eric

    2011-06-01

    This paper describes a single-chip InGaAs SWIR camera with more than 120dB instant operational dynamic range with an innovative CMOS ROIC technology, so called MAGIC, invented and patented by New Imaging Technologies. A 320x256- pixel InGaAs 25μm pitch photodiode array, designed and fabricated by III-Vlab/Thales Research & Technology(TRT), has been hybridized on this new generation CMOS ROIC. With NIT's MAGIC technology, the sensor's output follows a precise logarithmic law in function of incoming photon flux and gives instant operational dynamic range (DR) better than 120 dB. The ROIC incorporates the entire video signal processing function including a CCIR TV encoder, so a complete SWIR InGaAs camera with standard video output has been realized on a single 30x30 mm2 PCB board with ¼ W power consumption. Neither TEC nor NUC is needed from room temperature operation. The camera can be switched on and off instantly, ideal for all the portable battery operated SWIR band observation applications. The measured RMS noise and FPN noise on the prototype sensor in dark conditions are 0.4 mV and 0.27 mV respectively. The signal excursion from pixel is about 300mV over the 120 dB dynamic range. The FPN remains almost constant over the whole operation dynamic range. The NEI has been measured to be 3,71E+09 ph/s/cm2 with 92 equivalent noise photons at 25Hz frame rate, better than the same architecture of InGaAs photodiode array hybridized on an Indigo ROIC ISC9809 with a pitch of 30 μm for which a readout noise of 120 electrons is observed.

  9. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

    PubMed

    Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

    2016-06-01

    Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs. PMID:27427737

  10. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

    PubMed

    Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

    2016-06-01

    Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

  11. High-speed InGaAs thin film MSM photodetector characterization using a fiber-based electro-optic sampling system

    NASA Astrophysics Data System (ADS)

    Seo, Sang-Woo; Cho, Sang-Yeon; Huang, Sa; Brown, April; Jokerst, Nan M.

    2004-06-01

    As optoelectronic devices increase in speed, the measurement system used to characterize these devices must have sufficient bandwidth and minimum parasitic loading during test to accurately determine the intrinsic performance of the device under test. Conventional electrical measurement systems have an intrinsic bandwidth due to the available components for test and have parasitic loading due to direct electrical contact to the device under the test. Electro-optic sampling is an excellent measurement technique for characterizing ultra-fast devices because it has high bandwidth, is non-contact, is non-destructive, and relatively non-invasive. In this paper, an optical fiber-based electro-optic sampling system is designed and used for characterizing high speed InGaAs thin film MSM photodetectors. A fiber laser which is operating at 1556 nm wavelength was used for the sampling and excitation beam. Optical fibers were used to connect each component in the system for flexibility. InGaAs thin film MSM photodetectors were fabricated and characterized. InGaAs thin film MSM photodetectors were bonded onto a coplanar strip line deposited on a benzocyclobutene (BCB)-coated glass substrate for characterization. These thin film photodetectors show high speed operation combined with high responsivity and large detection area compared to P-I-N photodetectors operating at similar speeds

  12. Impact of stoichiometry on the electronic structure of PbS quantum dots.

    PubMed

    Kim, Donghun; Kim, Dong-Ho; Lee, Joo-Hyoung; Grossman, Jeffrey C

    2013-05-10

    Although the stoichiometry of bulk lead sulfide (PbS) is exactly 1:1, that of quantum dots (QDs) can be considerably different from this crystalline limit. Employing first-principles calculations, we show that the impact of PbS QD stoichiometry on the electronic structure can be enormous, suggesting that control over the overall stoichiometry in the QD will play a critical role for improving the efficiency of optoelectronic devices made with PbS QDs. In particular, for bare PbS QDs, we find that: (i) stoichiometric PbS QDs are free from midgap states even without ligand passivation and independent of shape, (ii) off stoichiometry in PbS QDs introduces new states in the gap that are highly localized on certain surface atoms, and (iii) further deviations in stoichiometry lead to QDs with "metallic" behavior, with a dense number of energy states near the Fermi level. We further demonstrate that this framework holds for the case of passivated QDs by considering the attachment of ligand molecules as stoichiometry variations. Our calculations show that an optimal number of ligands makes the QD stoichiometric and heals unfavorable electronic structure, whereas too few or too many ligands cause effective off stoichiometry, resulting in QDs with defect states in the gap.

  13. Structural and optical characterization of pure and starch-capped ZnO quantum dots and their photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Vidhya, K.; Saravanan, M.; Bhoopathi, G.; Devarajan, V. P.; Subanya, S.

    2015-02-01

    Among the different types of metal oxides, zinc oxide (ZnO) is a most commonly used metal oxide in a broad variety of applications. In the present investigation, a modified green synthesis route was used to synthesize pure and starch-capped ZnO (ZnO/starch) quantum dots (QDs) and studied their structural and optical characteristics. In this study, hexagonal crystal structure was observed in both pure and ZnO/starch QDs using X-ray diffraction technique. A spherical-shaped surface morphology was found with the size of 5-10 nm using transmission electron microscope technique. The interaction between ZnO QDs and starch molecules was proved via Fourier infra-red spectrometer technique. On the other hand, their fluorescence behaviors were investigated using photoluminescence technique, in that the ZnO/starch QDs showed an enhanced emission behavior when compared to the pure ZnO QDs. Further, the solar photocatalytic activity of both the ZnO QDs was examined with the dye Rhodamine B (RhB) at the end of 30, 60, 90, and 120 min. In this, ZnO/starch QDs show a good and more decomposition of RhB than pure ZnO QDs. Collectively, in the present study, green synthesis route produced an efficient QDs (pure and ZnO/starch) and it will be very useful for many other QDs. The ZnO/starch QDs are suitable for decomposing the RhB and other toxic organic dyes.

  14. Low-noise, fast frame-rate InGaAs 320 x 256 FPA for hyperspectral applications

    NASA Astrophysics Data System (ADS)

    Vermeiren, Jan; Van Bogget, Urbain; Van Horebeek, Guido; Bentell, Jonas; Verbeke, Peet; Colin, Thierry

    2009-05-01

    InGaAs is the material of preference for uncooled imaging in the [0.9-1.7 μm] SWIR range, as it can be manufactured on low cost InP substrates in a mainstream technology for optical telecommunications. By removing the substrate the spectral range can be extended to the [0.6 - 1.7 μm] range. In this way low cost, room temperature operated FPAs cameras for imaging and hyperspectral applications can be developed. The FPA is built around a low power CTIA stage with 3 S&H capacitors in the 20*20 um2 unit cell. This approach results in a synchronous shutter operation, which will support both ITR and IWR operation. In IWR mode the integration dead time is limited to max. 10 μsec. The CDS operation yields in a high sensitivity combined with a low noise: This presentation will focus on the development of a 20 μm pitch 320*256 device, with the following main characteristics: 20 μV/e-sensitivity and < 60 e-noise. The 4 low-power, differential outputs are enabling to drive an output load of > 30 pF at 40 Msamples/sec each, resulting in a > 1700 Hz frame rate, while at the same time the overall nominal power dissipation is < 200 mW. The ROIC is realized in a 0.35 um technology and the outputs are designed to drive directly a 3.3 V, 1.5 V VCM differential AD convertor. The circuit also supports a NDR operating mode to further reduce the noise of the FPA. A small from factor camera with Cameralink output is built around this FPA.

  15. Compact multichannel receiver using InGaAs APDs for single-pulse eye-safe laser radar imagery

    NASA Astrophysics Data System (ADS)

    Burns, Hoyt N.; Yun, Steven T.; Dinndorf, Kenneth M.; Hayden, David R.

    1997-08-01

    Active imaging laser radars form 3D images which can be processed to provide target identification and precision aimpoint definition in real time. Earlier raster-scanned and pushbroom-scanned 3D imaging laser radar receivers required multiple laser pulses to assemble a complete 3D image frame. Platform/target motion and atmospheric effects caused tearing and jitter in the assembled 3D images, which complicated the subsequent image processing and necessitated the use of stabilized scanning systems. This paper describes the current status of the parallel/multichannel imaging laser radar receiver (PMR) which is being developed under an SBIR Phaser II program by the USAF Wright Laboratories Armament Directorate. The PMR uses an array of multichannel laser radar receivers to form single-pulse, 3D laser radar images, thus eliminating the complex and costly scanning system, and enabling much higher frame rates than were ever before possible. The heart of the PMR is the multichannel optical receiver photonic hybrid (MORPH), a high performance 16-channel laser radar receiver module which uses an array of InGaAs avalanche photodiodes for eyesafe operation. The MORPH provides high downrange resolution, multihit range data for each detector on a compact circuit card. Optical flux is transferred from the receiver focal plane to each MORPH via a fiber optic ribbon cable. An array of MORPHs are plugged into a compact passive backplane, along with a single digital control card (DCC). The DCC, which is the same form factor as the MORPH, synchronizes the MORPHs and transfers the digital range information to the host processor over a standard parallel data interface cable. The system described here illustrates one approach to integrating and packaging high-density photonic arrays and their associated signal processing electronics to yield a compact, low power, scannerless, high performance imaging laser radar receiver, using existing technology.

  16. High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics

    PubMed Central

    Shen, Li-Fan; Yip, SenPo; Yang, Zai-xing; Fang, Ming; Hung, TakFu; Pun, Edwin Y.B.; Ho, Johnny C.

    2015-01-01

    Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire surface/interface traps between the nanowire channel and gate dielectric as well as the complicated device fabrication scheme. Here, we report the development of high-performance wrap-gated InGaAs NWFETs using conventional sputtered Al2O3 layers as gate dielectrics, instead of the typically employed atomic layer deposited counterparts. Importantly, the surface chemical passivation of NW channels performed right before the dielectric deposition is found to significantly alleviate plasma induced defect traps on the NW channel. Utilizing this passivation, the wrap-gated device exhibits superior electrical performances: a high ION/IOFF ratio of ~2 × 106, an extremely low sub-threshold slope of 80 mV/decade and a peak field-effect electron mobility of ~1600 cm2/(Vs) at VDS = 0.1 V at room temperature, in which these values are even better than the ones of state-of-the-art NWFETs reported so far. By combining sputtering and pre-deposition chemical passivation to achieve high-quality gate dielectrics for wrap-gated NWFETs, the superior gate coupling and electrical performances have been achieved, confirming the effectiveness of our hybrid approach for future advanced electronic devices. PMID:26607169

  17. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    SciTech Connect

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang E-mail: mssgzhang@scut.edu.cn; Li, Guoqiang E-mail: mssgzhang@scut.edu.cn

    2014-11-21

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In{sub x}Ga{sub 1−x}As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In{sub x}Ga{sub 1−x}As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In{sub x}Ga{sub 1−x}As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In{sub x}Ga{sub 1−x}As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In{sub x}Ga{sub 1−x}As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In{sub x}Ga{sub 1−x}As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

  18. Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation

    SciTech Connect

    Schmidbauer, M.; Seydmohamadi, Sh.; Wang, Zh.M.; Mazur, Yu.I.; Salamo, G.J.; Grigoriev, D.; Schaefer, P.; Koehler, R.; Hanke, M.

    2006-02-17

    Anisotropic surface diffusion and strain are used to explain the formation of three-dimensional (In,Ga)As quantum dot lattices. The diffusion characteristics of the surface, coupled with the elastic anisotropy of the matrix, provides an excellent opportunity to influence the dot positions. In particular, quantum dots that are laterally organized into long chains or chessboard two-dimensional arrays vertically organized with strict vertical ordering or vertical ordering that is inclined to the sample surface normal are accurately predicted and observed.

  19. Quantum dots (QDs) restrain human cervical carcinoma HeLa cell proliferation through inhibition of the ROCK-c-Myc signaling.

    PubMed

    Chen, Liqun; Qu, Guangbo; Zhang, Changwen; Zhang, Shuping; He, Jiuyang; Sang, Nan; Liu, Sijin

    2013-03-01

    Cancers often cause significant morbidity and even death to patients. To date, conventional therapies, such as chemotherapy, radiation and surgery, are often limited; meanwhile, novel anticancer therapeutics are urgently needed to improve clinical treatments. Rapid application of nanotechnology and nanomaterials represents a promising vista for the development of anti-cancer therapeutics. However, how to integrate the novel properties of nanotechnology and nanomaterials into cancer treatment warrants close investigation. In the current study, we report a novel finding about the inhibitory effect of CdSe quantum dots (QDs) on Rho-associated kinase (ROCK) activity in cervical carcinoma HeLa cells associated with the attenuation of the ROCK-c-Myc signaling. We mechanistically demonstrated that QD-conducted ROCK inhibition greatly diminished c-Myc protein stability due to reduced phosphorylation, and also suppressed its activity in transcribing target genes (e.g. HSPC111). Thus, the treatment of QDs greatly restrained HeLa cell growth by inducing cell cycle arrest at G1 phase due to the reduced ability of c-Myc in driving cell proliferation. Additionally, since HSPC111, one of the c-Myc targets, is involved in regulating cell growth through ribosomal biogenesis and assembly, the downregulation of HSPC111 could also contribute to diminished proliferation in HeLa cells upon QD treatment. These results together suggested that inhibition of ROCK activity or ROCK-mediated c-Myc signaling in tumor cells upon QD treatment might represent a promising strategy to restrain tumor progression for human cervical carcinoma.

  20. Optimising the defect filter layer design for III/V QDs on Si for integrated laser applications

    NASA Astrophysics Data System (ADS)

    Orchard, Jonathan R.; Wu, Jiang; Chen, Siming; Jiang, Qi; Ward, Thomas; Beanland, Richard; Lui, Huiyun; Mowbray, David

    2015-02-01

    We introduce the concept of using strained superlattice structures as defect filters, with their purpose to reduce the upwards propagation of dislocations that result from the lattice mismatch which occurs when III-V materials are grown on silicon substrates. Three samples with defect filter layers are grown on Si with and without in situ annealing and are compared to a similar structure grown on a GaAs substrate. Transmission electron microscopy is used to verify the effectiveness of the different designs grown on Si, with the twice-annealed sample reducing the number of defects present in the active region by 99.9%. Optical studies carried out exhibit brighter room temperature emission and reduced photoluminescence quenching with temperature in samples where annealing is performed. Photoluminescence excitation measurements reveal a ~20 meV redshift in the position of the GaAs exciton for the samples grown on Si compared to that of GaAs, indicating a residual inplane tensile strain ~0.35% in the GaAs of the active region for the samples grown on Si.

  1. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

    NASA Astrophysics Data System (ADS)

    Han, Yu; Li, Qiang; Chang, Shih-Pang; Hsu, Wen-Da; Lau, Kei May

    2016-06-01

    We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Room temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.

  2. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha; Das, Subhashis; Biswas, Dhrubes

    2015-12-01

    InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

  3. Terahertz radiation using log-spiral-based low-temperature-grown InGaAs photoconductive antenna pumped by mode-locked Yb-doped fiber laser.

    PubMed

    Kong, Moon Sik; Kim, Ji Su; Han, Sang Pil; Kim, Namje; Moon, Kiwon; Park, Kyung Hyun; Jeon, Min Yong

    2016-04-01

    We demonstrate a terahertz (THz) radiation using log-spiral-based low-temperature-grown (LTG) InGaAs photoconductive antenna (PCA) modules and a passively mode-locked 1030 nm Yb-doped fiber laser. The passively mode-locked Yb-doped fiber laser is easily implemented with nonlinear polarization rotation in the normal dispersion using a 10-nm spectral filter. The laser generates over 250 mW of the average output power with positively chirped 1.58 ps pulses, which are dechirped to 127 fs pulses using a pulse compressor outside the laser cavity. In order to obtain THz radiation, a home-made emitter and receiver constructed from log-spiral-based LTG InGaAs PCA modules were used to generate and detect THz signals, respectively. We successfully achieved absorption lines over 1.5 THz for water vapor in free space. Therefore, we confirm that a mode-locked Yb-doped fiber laser has the potential to be used as an optical source to generate THZ waves.

  4. High-optical-power handling InGaAs photodiodes and balanced receivers for high-spurious free dynamic range (SFDR) analog photonic links

    NASA Astrophysics Data System (ADS)

    Joshi, Abhay M.; Wang, Xinde; Mohr, Dan; Becker, Donald; Patil, Ravikiran

    2004-08-01

    We have developed 20 mA or higher photocurrent handling InGaAs photodiodes with 20 GHz bandwidth, and 10 mA or higher photocurrent handling InGaAs photodiodes with >40 GHz bandwidth. These photodiodes have been thoroughly tested for reliability including Bellcore GR 468 standard and are built to ISO 9001:2000 Quality Management System. These Dual-depletion InGaAs/InP photodiodes are surface illuminated and yet handle such large photocurrent due to advanced band-gap engineering. They have broad wavelength coverage from 800 nm to 1700 nm, and thus can be used at several wavelengths such as 850 nm, 1064 nm, 1310 nm, 1550 nm, and 1620 nm. Furthermore, they exhibit very low Polarization Dependence Loss of 0.05dB typical to 0.1dB maximum. Using above high current handling photodiodes, we have developed classical Push-Pull pair balanced photoreceivers for the 2 to 18 GHz EW system. These balanced photoreceivers boost the Spurious Free Dynamic Range (SFDR) by almost 3 dB by eliminating the laser RIN noise. Future research calls for designing an Avalanche Photodiode Balanced Pair to boost the SFDR even further by additional 3 dB. These devices are a key enabling technology in meeting the SFDR requirements for several DoD systems.

  5. Ex post manipulation of barriers in InGaAs tunnel injection devices

    SciTech Connect

    Talalaev, Vadim G.; Cirlin, George E.; Novikov, Boris V.; Fuhrmann, Bodo; Werner, Peter; Tomm, Jens W.

    2015-01-05

    Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.

  6. Off state breakdown behavior of AlGaAs / InGaAs field plate pHEMTs

    SciTech Connect

    Palma, John; Mil'shtein, Samson

    2014-05-15

    Off-state breakdown voltage, V{sub br}, is an important parameter determining the maximum power output of microwave Field Effect Transistors (FETs). In recent years, the use of field plates has been widely adopted to significantly increase V{sub br}. This important technological development has extended FET technologies into new areas requiring these higher voltages and power levels. Keeping with this goal, field plates were added to an existing AlGaAs / InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) process with the aim of determining the off-state breakdown mechanism and the dependency of V{sub br} on the field plate design. To find the mechanism responsible for breakdown, temperature dependent off-state breakdown measurements were conducted. It was found that at low current levels, the temperature dependence indicates thermionic field emission at the Schottky gate and at higher current levels, impact ionization is indicated. The combined results imply that impact ionization is ultimately the mechanism that is responsible for the breakdown in the tested transistors, but that it is preceded by thermionic field emission from the gate. To test the dependence of V{sub br} upon the field plate design, the field plate length and the etch depth through the highly-doped cap layer under the field plate were varied. Also, non-field plate devices were tested along side field plate transistors. It was found that the length of the etched region under the field plate is the dominant factor in determining the off-state breakdown of the more deeply etched devices. For less deeply etched devices, the length of the field plate is more influential. The influence of surface states between the highly doped cap layer and the passivation layer along the recess are believed to have a significant influence in the case of the more deeply etched examples. It is believed that these traps spread the electric field, thus raising the breakdown voltage. Three terminal breakdown

  7. InGaAs axial-junction nanowire-array solar cells

    NASA Astrophysics Data System (ADS)

    Nakai, Eiji; Chen, Muyi; Yoshimura, Masatoshi; Tomioka, Katsuhiro; Fukui, Takashi

    2015-01-01

    Axial p-i-n junction nanowire (NW) solar cells (SCs) with a position-controlled GaAs-based NW array were fabricated by selective-area metal organic vapor phase epitaxy (SA-MOVPE). The measured electron-beam-induced current (EBIC) signals showed the formation of an axial p-i-n junction, which confirms power generation under sunlight illumination. The series resistance of the NW SCs is much higher than that of conventional planar SCs based on Si or other III-V compound semiconductors. The main difficulty concerning the fabrication of these NW SCs is the degradation of series resistance between the GaAs-based NWs and the indium-tin oxide (ITO) deposited as a transparent electrode. The series resistance of the fabricated GaAs-based NW SCs was reduced by introducing a tin doping contact layer between the ITO and the NW array, which is formed by pulse doping. As a result of this improved structure, the fabricated SCs exhibited an open-circuit voltage of 0.544 V, a short-circuit current of 18.2 mA/cm2, and a fill factor of 0.721 for an overall conversion efficiency of 7.14% under AM1.5G illumination. The series resistance of the SCs could be decreased to 0.132 Ω·cm2, which is one order of magnitude lower than that of the SC without a highly doped contact layer. This reduced series resistance indicates that nanostructure SCs with transparent electrodes and multijunction NW SCs with high efficiencies can be fabricated on a commercial basis in the near future.

  8. Tunable lateral tunnel coupling between two self-assembled InGaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Beirne, Gareth J.; Hermannstädter, Claus; Wang, Lijuan; Rastelli, Armando; Müller, Elisabeth; Schmidt, Oliver G.; Michler, Peter

    2007-02-01

    We demonstrate direct control over the level of lateral quantum coupling between two self-assembled InGaAs/GaAs quantum dots. This coupled system, which we also refer to as a lateral quantum dot molecule, was produced using a unique technique which combines molecular beam epitaxy and in-situ atomic layer etching. Atomic force microscopy measurements show that each molecule consists of two structurally distinct dots, which are aligned along the [1-10] direction. Each molecule exhibits a characteristic photoluminescence spectrum primarily consisting of two neutral excitonic and two biexcitonic transitions. The various transitions have been investigated using micro-photoluminescence measurements as a function of excitation power density, time, and applied electric field. Photon statistics experiments between the excitonic emission lines display strong antibunching in the second-order cross-correlation function which confirms that the two dots are quantum coupled. Cascaded emission between corresponding biexcitonic and excitonic emission has also been observed. Using a parallel electric field we can control the quantum coupling between the dots. This control manifests itself as an ability to reversibly switch the relative intensities of the two neutral excitonic transitions. Furthermore, detailed studies of the emission energies of the two neutral excitonic transitions as a function of parallel lateral electric field show a clear anomalous Stark shift which further demonstrates the presence of quantum coupling between the dots. In addition, this shift allows for a reasonable estimate of the coupling energy. Finally, a simple one-dimensional model, which assumes that the coupling is due to electron tunneling, is used to qualitatively describe the observed effects.

  9. Degradation processes in high power multi-mode InGaAs strained quantum well lasers

    NASA Astrophysics Data System (ADS)

    Sin, Yongkun; Presser, Nathan; Foran, Brendan; Moss, Steven C.

    2009-02-01

    Recently, broad-area InGaAs-AlGaAs strained quantum well (QW) lasers have attracted much attention because of their unparalleled high optical output power characteristics that narrow stripe lasers or tapered lasers can not achieve. However, broad-area lasers suffer from poor beam quality and their high reliability operation has not been proven for communications applications. This paper concerns reliability and degradation aspects of broad-area lasers. Good facet passivation techniques along with optimized structural designs have led to successful demonstration of reliable 980nm single-mode lasers, and the dominant failure mode of both single-mode and broadarea lasers is catastrophic optical mirror damage (COMD), which limits maximum output powers and also determines operating output powers. Although broad-area lasers have shown characteristics unseen from singlemode lasers including filamentation, their effects on long-term reliability and degradation processes have not been fully investigated. Filamentation can lead to instantaneous increase in optical power density and thus temperature rise at localized areas through spatial-hole burning and thermal lensing which significantly reduces filament sizes under high power operation, enhancing the COMD process. We investigated degradation processes in commercial MOCVD-grown broad-area InGaAs-AlGaAs strained QW lasers at ~975nm with and without passivation layers by performing accelerated lifetests of these devices followed by failure mode analyses with various micro-analytical techniques. Since instantaneous fluctuations of filaments can lead to faster wear-out of passivation layer thus leading to facet degradation, both passivated and unpassivated broad-area lasers were studied that yielded catastrophic failures at the front facet and also in the bulk. Electron beam induced current technique was employed to study dark line defects (DLDs) generated in degraded lasers stressed under different test conditions and focused

  10. Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

    NASA Astrophysics Data System (ADS)

    Kuo, Meng-Wei

    Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly

  11. Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

    SciTech Connect

    Chidambaram, Thenappan; Madisetti, Shailesh; Greene, Andrew; Yakimov, Michael; Tokranov, Vadim; Oktyabrsky, Serge; Veksler, Dmitry; Hill, Richard

    2014-03-31

    In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, mobility over 8000 cm{sup 2}/Vs is observed at ∼1.4 × 10{sup 12} cm{sup −2}. Temperature dependence of the electron mobility gives the evidence that remote Coulomb scattering dominates at electron density <2 × 10{sup 11} cm{sup −2}. Spectrum of the interface/border traps is quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be distinguished from free channel carriers just by capacitance-based methods and can be the reason for significant overestimation of channel density and underestimation of carrier mobility from transistor measurements.

  12. Characteristics of the dynamics of breakdown filaments in Al{sub 2}O{sub 3}/InGaAs stacks

    SciTech Connect

    Palumbo, F.; Shekhter, P.; Eizenberg, M.; Cohen Weinfeld, K.

    2015-09-21

    In this paper, the Al{sub 2}O{sub 3}/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.

  13. Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

    SciTech Connect

    Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M.; Tang, K.; Ahn, J.; McIntyre, P. C.

    2015-08-07

    The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

  14. Comparison of the degradation characteristics of AlON/InGaAs and Al{sub 2}O{sub 3}/InGaAs stacks

    SciTech Connect

    Palumbo, F. Krylov, I.; Eizenberg, M.

    2015-03-14

    In this paper, the degradation characteristics of MOS (Metal-Oxide-Semiconductor) stacks with Al{sub 2}O{sub 3}/AlON or Al{sub 2}O{sub 3} only as dielectric layers on InGaAs were studied. The dielectric nitrides are proposed as possible passivation layers to prevent InGaAs oxidation. At negative bias, it has been found out that the main contribution to the overall degradation of the gate oxide is dominated by the generation of positive charge in the gate oxide. This effect is pronounced in MOS stacks with Al{sub 2}O{sub 3}/AlON as dielectric, where we think the positive charge is mainly generated in the AlON interlayer. At positive bias, the degradation is dominated by buildup of negative charge due to electron trapping in pre-existing or stress-induced traps. For stress biases where the leakage currents are low, the changes in the electrical characteristics are dominated by electron-trapping into traps located in energy levels in the upper part of the semiconductor gap. For stress biases with higher leakage current levels, the electron trapping occurs in stress-induced traps increasing the shift of V{sub FB} towards positive bias. The overall results clearly show that the improvement of the high-k dielectric/InGaAs interface by introducing N into the Al-oxide does not necessarily mean an increase in the reliability of the MOS stack.

  15. Electronic structure of cobalt doped CdSe quantum dots using soft X-ray spectroscopy

    SciTech Connect

    Joshua T. Wright; Su, Dong; van Buuren, Tony; Meulenberg, Robert W.

    2014-08-21

    The electronic structure and magnetic properties of cobalt doped CdSe quantum dots (QDs) are studied using electron microscopy, soft X-ray spectroscopy, and magnetometry. Magnetometry measurements suggest these QDs are superparamagnetic, contrary to a spin-glass state observed in the bulk analogue. Moreover, the electron microscopy shows well formed QDs, but with cobalt existing as doped into the QD and as unreacted species not contained in the QD. X-ray absorption measurements at the Co L3-edge suggest that changes in spectra features as a function of particle size can be described considering combination of a cobalt ion in a tetrahedral crystal field and an octahedrally coordinated (impurity) phase. With decreasing particle sizes, the impurity phase increases, suggesting that small QDs can be difficult to dope.

  16. Control of electrochemical signals from quantum dots conjugated to organic materials by using DNA structure in an analog logic gate.

    PubMed

    Chen, Qi; Yoo, Si-Youl; Chung, Yong-Ho; Lee, Ji-Young; Min, Junhong; Choi, Jeong-Woo

    2016-10-01

    Various bio-logic gates have been studied intensively to overcome the rigidity of single-function silicon-based logic devices arising from combinations of various gates. Here, a simple control tool using electrochemical signals from quantum dots (QDs) was constructed using DNA and organic materials for multiple logic functions. The electrochemical redox current generated from QDs was controlled by the DNA structure. DNA structure, in turn, was dependent on the components (organic materials) and the input signal (pH). Independent electrochemical signals from two different logic units containing QDs were merged into a single analog-type logic gate, which was controlled by two inputs. We applied this electrochemical biodevice to a simple logic system and achieved various logic functions from the controlled pH input sets. This could be further improved by choosing QDs, ionic conditions, or DNA sequences. This research provides a feasible method for fabricating an artificial intelligence system. PMID:27116705

  17. A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Pokroy, Boaz; Eizenberg, Moshe; Ritter, Dan

    2016-09-01

    We compare the electrical properties of HfO2/Al2O3 nano-laminates with those of the ternary HfxAlyO compound in metal oxide semiconductor (MOS) capacitors. The dielectrics were deposited by atomic layer deposition on InGaAs. Water, ozone, and oxygen plasma were tested as oxygen precursors, and best results were obtained using water. The total dielectric thickness was kept constant in our experiments. It was found that the effective dielectric constant increased and the leakage current decreased with the number of periods. Best results were obtained for the ternary compound. The effect of the sublayer thicknesses on the electrical properties of the interface was carefully investigated, as well as the role of post-metallization annealing. Possible explanations for the observed trends are provided. We conclude that the ternary HfxAlyO compound is more favorable than the nano-laminates approach for InGaAs based MOS transistor applications.

  18. Heterostructured Au NPs/CdS/LaBTC MOFs Photoanode for Efficient Photoelectrochemical Water Splitting: Stability Enhancement via CdSe QDs to 2D-CdS Nanosheets Transformation.

    PubMed

    Vaddipalli, Srinivasa Rao; Sanivarapu, Suresh Reddy; Vengatesan, Singaram; Lawrence, John Berchmans; Eashwar, Malayappan; Sreedhar, Gosipathala

    2016-09-01

    The electrochemical stability of MOFs in aqueous medium is most essential for MOFs based electrocatalysts for hydrogen production via water splitting. Since most MOFs suffer from instability issues in aqueous systems, there is enormous demand for electrochemically stable MOFs catalysts. Herein, we have developed a simple postsynthesis surface modification protocol for La (1,3,5-BTC) (H2O)6 metal-organic frameworks (LaBTC MOFs) using Mercaptopropionic acid (MPA), to attain electrochemical stability in aqueous mediums. The MPA treated LaBTC MOFs exhibited better stability than the bare LaBTC. Further, to facilitate light harvesting properties of LaBTC MOFs, Au nanoparticles (NPs) and CdSe quantum dots (QDs) are functionalized on LaBTC. The sensitization of LaBTC with Au NPs and CdSe QDs enhances the light harvesting properties of LaBTC in the visible region of solar spectrum. Using as a photoanode, the electrode generates the current density of ∼80 mA/cm(2) at 0.8 V (vs Ag/AgCl) during photoelectrochemical water splitting. The heterostructured LaBTC photoanode demonstrates the long-term stability for the period of 10 h. The electrode post-mortem analysis confirms the conversion of CdSe QDs into single crystalline 2D-CdS nanosheets. The present investigation reveals that CdS nanosheets together with SPR Au NPs improve the photoelectrochemical water splitting activity and stability of LaBTC MOFs.

  19. Heterostructured Au NPs/CdS/LaBTC MOFs Photoanode for Efficient Photoelectrochemical Water Splitting: Stability Enhancement via CdSe QDs to 2D-CdS Nanosheets Transformation.

    PubMed

    Vaddipalli, Srinivasa Rao; Sanivarapu, Suresh Reddy; Vengatesan, Singaram; Lawrence, John Berchmans; Eashwar, Malayappan; Sreedhar, Gosipathala

    2016-09-01

    The electrochemical stability of MOFs in aqueous medium is most essential for MOFs based electrocatalysts for hydrogen production via water splitting. Since most MOFs suffer from instability issues in aqueous systems, there is enormous demand for electrochemically stable MOFs catalysts. Herein, we have developed a simple postsynthesis surface modification protocol for La (1,3,5-BTC) (H2O)6 metal-organic frameworks (LaBTC MOFs) using Mercaptopropionic acid (MPA), to attain electrochemical stability in aqueous mediums. The MPA treated LaBTC MOFs exhibited better stability than the bare LaBTC. Further, to facilitate light harvesting properties of LaBTC MOFs, Au nanoparticles (NPs) and CdSe quantum dots (QDs) are functionalized on LaBTC. The sensitization of LaBTC with Au NPs and CdSe QDs enhances the light harvesting properties of LaBTC in the visible region of solar spectrum. Using as a photoanode, the electrode generates the current density of ∼80 mA/cm(2) at 0.8 V (vs Ag/AgCl) during photoelectrochemical water splitting. The heterostructured LaBTC photoanode demonstrates the long-term stability for the period of 10 h. The electrode post-mortem analysis confirms the conversion of CdSe QDs into single crystalline 2D-CdS nanosheets. The present investigation reveals that CdS nanosheets together with SPR Au NPs improve the photoelectrochemical water splitting activity and stability of LaBTC MOFs. PMID:27532805

  20. Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

    SciTech Connect

    Cipro, R.; Gorbenko, V.; Baron, T. Martin, M.; Moeyaert, J.; David, S.; Bassani, F.; Bogumilowicz, Y.; Barnes, J. P.; Rochat, N.; Loup, V.; Vizioz, C.; Allouti, N.; Chauvin, N.; Bao, X. Y.; Ye, Z.; Pin, J. B.; Sanchez, E.

    2014-06-30

    Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface in a SiO{sub 2} cavity with an aspect ratio as low as 1.3 is efficient to completely annihilate the anti-phase boundary domains. InGaAs quantum wells were grown on a GaAs buffer and exhibit room temperature micro-photoluminescence. Cathodoluminescence reveals the presence of dark spots which could be associated with the presence of emerging dislocation in a direction parallel to the cavity. The InGaAs layers obtained with no antiphase boundaries are perfect candidates for being integrated as channels in n-type metal oxide semiconductor field effect transistor (MOSFET), while the low temperatures used allow the co-integration of p-type MOSFET.

  1. Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers

    SciTech Connect

    Nadtochiy, A. M.; Mintairov, S. A.; Kalyuzhnyy, N. A.; Rouvimov, S. S.; Shernyakov, Yu. M.; Payusov, A. S.; Maximov, M. V.; Zhukov, A. E.

    2015-08-15

    Heterostructures with InGaAs quantum dots (QDs) are synthesized on vicinal GaAs (001) substrates. The photoluminescence (PL) spectra and threshold characteristics of edge-emitting QD lasers are studied in the temperature range 10-400 K. The structural properties of QDs are examined by transmission electron microscopy. Analysis of the PL spectra demonstrates the bimodality of the QD array, which leads to an unusual temperature behavior of the PL spectra and threshold current density. A model of the population of a bimodal QD array by carriers, describing the observed phenomena, is considered.

  2. Si quantum dot structures and their applications

    NASA Astrophysics Data System (ADS)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  3. Color-tunable emission of quantum dots via strong exciton-plasmon coupling in nanoporous gold structure at room temperature.

    PubMed

    Zhao, X; Chen, L; Chen, J; Shi, W; Liu, F

    2016-09-01

    We experimentally demonstrate the color-tunable emission of CdTe quantum dots (QDs) enabled by strongly coupling the QDs to the nanoporous gold (NPG) structure at room temperature. By manipulating the concentrations of the QDs or the excitation flux of the laser, the coupling strength between the excitons in QDs and the plasmons in NPG is controlled, resulting in a large Rabi splitting at the magnitude of hundreds of meV and a photoluminescence (PL) tuning distinguishable by the naked eye. In addition, such large PL tuning is enabled not only for the strong coupling occurring on resonance but also off resonance. We believe that our study offers a new approach towards designing and fabricating novel opto-electronic devices where dynamical and large spectral tuning of QD PL emission is desired. PMID:27607629

  4. Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators

    NASA Astrophysics Data System (ADS)

    Macdougal, Michael; Geske, Jon; Wang, Chad; Follman, David

    2011-06-01

    We describe the factors that go into the component choices for a short wavelength IR (SWIR) imager, which include the SWIR sensor, the lens, and the illuminator. We have shown the factors for reducing dark current, and shown that we can achieve well below 1.5 nA/cm2 for 15 μm devices at 7 °C. In addition, we have mated our InGaAs detector arrays to 640×512 readout integrated integrated circuits to make focal plane arrays (FPAs). The resulting FPAs are capable of imaging photon fluxes with wavelengths between 1 and 1.6 μm at low light levels. The dark current associated with these FPAs is extremely low, exhibiting a mean dark current density of 0.26 nA/cm2 at 0 °C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling. In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide low-speckle illumination, and provide artifact-free imagery versus conventional laser illuminators.

  5. Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.

    PubMed

    Hou, Jared J; Han, Ning; Wang, Fengyun; Xiu, Fei; Yip, Senpo; Hui, Alvin T; Hung, TakFu; Ho, Johnny C

    2012-04-24

    InAs nanowires have been extensively studied for high-speed and high-frequency electronics due to the low effective electron mass and corresponding high carrier mobility. However, further applications still suffer from the significant leakage current in InAs nanowire devices arising from the small electronic band gap. Here, we demonstrate the successful synthesis of ternary InGaAs nanowires in order to tackle this leakage issue utilizing the larger band gap material but at the same time not sacrificing the high electron mobility. In this work, we adapt a two-step growth method on amorphous SiO(2)/Si substrates which significantly reduces the kinked morphology and surface coating along the nanowires. The grown nanowires exhibit excellent crystallinity and uniform stoichiometric composition along the entire length of the nanowires. More importantly, the electrical properties of those nanowires are found to be remarkably impressive with I(ON)/I(OFF) ratio >10(5), field-effect mobility of ∼2700 cm(2)/(V·s), and ON current density of ∼0.9 mA/μm. These nanowires are then employed in the contact printing and achieve large-scale assembly of nanowire parallel arrays which further illustrate the potential for utilizing these high-performance nanowires on substrates for the fabrication of future integrated circuits.

  6. CuFeS2 Quantum Dots and Highly Luminescent CuFeS2 Based Core/Shell Structures: Synthesis, Tunability, and Photophysics.

    PubMed

    Bhattacharyya, Biswajit; Pandey, Anshu

    2016-08-17

    We report the synthesis of copper iron sulfide (CuFeS2) quantum dots (QDs). These materials exhibit a tunable band gap that spans the range 0.5-2 eV (600-2500 nm). Although the as-prepared material is nonemissive, CuFeS2/CdS core/shell structures are shown to exhibit quantum yields that exceed 80%. Like other members of the I-III-VI2 family QDs, CuFeS2 based nanoparticles exhibit a long-lived emission that is significantly red-shifted compared to the band gap. CuFeS2 QDs are unique in terms of their composition. In particular, these QDs are the only band-gap-tunable infrared chromophore composed entirely of elements with atomic numbers less than 30. PMID:27447297

  7. Impact of ex situ rapid thermal annealing on magneto-optical properties and oscillator strength of In(Ga)As quantum dots

    NASA Astrophysics Data System (ADS)

    Braun, T.; Betzold, S.; Lundt, N.; Kamp, M.; Höfling, S.; Schneider, C.

    2016-04-01

    We discuss the influence of a rapid thermal annealing step on the magneto-optical emission properties of In(Ga)As/GaAs quantum dots. We map out a strong influence of the growth and annealing parameters on the excitons' effective Landé g factors and in particular on their diamagnetic coefficients, which we directly correlate with the modification of the emitters' shape and material composition. In addition, we study the excitons' spontaneous emission lifetime as a function of the annealing temperature and the dot height and observe a strong increase of the emission rate with the quantum dot volume. The corresponding increase in oscillator strength yields fully consistent results with the analysis of the diamagnetic behavior. Specifically, we demonstrate that a rapid thermal annealing step of 850 ∘C can be employed to increase the oscillator strength of as-grown InAs/GaAs QDs by more than a factor of 2.

  8. Correlation of atomic structure and photoluminescence of the same quantum dot: pinpointing surface and internal defects that inhibit photoluminescence.

    PubMed

    Orfield, Noah J; McBride, James R; Keene, Joseph D; Davis, Lloyd M; Rosenthal, Sandra J

    2015-01-27

    In a size regime where every atom counts, rational design and synthesis of optimal nanostructures demands direct interrogation of the effects of structural divergence of individuals on the ensemble-averaged property. To this end, we have explored the structure-function relationship of single quantum dots (QDs) via precise observation of the impact of atomic arrangement on QD fluorescence. Utilizing wide-field fluorescence microscopy and atomic number contrast scanning transmission electron microscopy (Z-STEM), we have achieved correlation of photoluminescence (PL) data and atomic-level structural information from individual colloidal QDs. This investigation of CdSe/CdS core/shell QDs has enabled exploration of the fine structural factors necessary to control QD PL. Additionally, we have identified specific morphological and structural anomalies, in the form of internal and surface defects, that consistently vitiate QD PL.

  9. The influence of surface preparation on low temperature HfO{sub 2} ALD on InGaAs (001) and (110) surfaces

    SciTech Connect

    Kent, Tyler; Edmonds, Mary; Kummel, Andrew C.; Tang, Kechao; Negara, Muhammad Adi; McIntyre, Paul; Chobpattana, Varistha; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi

    2015-10-28

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C{sub max} hypothesized to be a result of poor nucleation of HfO{sub 2} on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D{sub it} high C{sub ox} MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.

  10. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

    NASA Astrophysics Data System (ADS)

    Kent, Tyler; Tang, Kechao; Chobpattana, Varistha; Negara, Muhammad Adi; Edmonds, Mary; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi; McIntyre, Paul; Kummel, Andrew C.

    2015-10-01

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher Cmax hypothesized to be a result of poor nucleation of HfO2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low Dit high Cox MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.

  11. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces.

    PubMed

    Kent, Tyler; Tang, Kechao; Chobpattana, Varistha; Negara, Muhammad Adi; Edmonds, Mary; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi; McIntyre, Paul; Kummel, Andrew C

    2015-10-28

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C(max) hypothesized to be a result of poor nucleation of HfO2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D(it) high C(ox) MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.

  12. Boron doped Si rich oxide/SiO{sub 2} and silicon rich nitride/SiN{sub x} bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

    SciTech Connect

    Lin, Ziyun Wu, Lingfeng; Jia, Xuguang; Zhang, Tian; Puthen-Veettil, Binesh; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-07-28

    Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO{sub 2} and Si/SiN{sub x} based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred compared to phosphine (PH{sub 3}) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.

  13. Influence of Hot Carrier Transport on the Transient Response of an InGaAs/InAlAs Metal-Semiconductor Schottky Diode Structure

    NASA Technical Reports Server (NTRS)

    Salem, Ali F.; Brennan, Kevin F.

    1996-01-01

    The calculated transient characteristic of a heterostructure, rectifying contact is theoretically examined. It is found that hot carrier transport drastically affects the output terminal characteristics of the heterostructure Schottky contact and, hence, the working of a blocking contact. This is of importance to the understanding of InGaAs MSM devices in particular, as well as any structure which contains a blocking contact in general.

  14. Investigation on multi-frequency oscillations in InGaAs planar Gunn diode with multiple anode-cathode spacings

    NASA Astrophysics Data System (ADS)

    Li, B.; Alimi, Y.; Ma, G. L.

    2016-12-01

    Current oscillations in an AlGaAs/InGaAs/AlGaAs-based two-dimensional electron gas (2DEG)-based hetero-structure have been investigated by means of semiconductor device simulation software SILVACO, with an interest on the charge domain formation at large biases. Single-frequency oscillations are generated in planar Gunn diodes with uniform anode and cathode contacts. The oscillation frequency reduces as the applied bias voltage increases. We show that it is possible to create multiple, independent charge domains in a novel Gunn diode structure with designed multiple anode-cathode spacings. This enables simultaneous generation of multiple frequency oscillations in a single planar device, in contrast to traditional vertical Gunn diodes where only single-frequency oscillations can be achieved. More interestingly, frequency mixing in multiple-channel configured Gunn diodes appeared. This proof-of-concept opens up the possibility for realizing compact self-oscillating mixer at millimeter-wave applications.

  15. Electrochemical Characterization of Semiconductor Materials and Structures

    NASA Technical Reports Server (NTRS)

    1997-01-01

    The objective of this investigation was to demonstrate the applicability of electrochemical techniques for characterization of complex device structures based on InP and GaAs, Ge, InGaAs, InSb, InAs and InSb, including: (1) accurate EC-V net majority carrier concentration depth profiling, and (2) surface and bulk structural and electrical type defect densities. Our motivation for this R&D effort was as follows: Advanced space solar cells and thermophotovoltaic (TPV) cells are fabricated using a large variety of III-V materials based on InP and GaAs for solar cells and low bandgap materials such as Ge, InGaAs, InAs and InSb for TPV applications. At the present time for complex device structures using these materials, however, there is no simple way to assess the quality of these structures prior to device fabrication. Therefore, process optimization is a very time consuming and a costly endeavor. Completion of this R&D effort would have had unquestionable benefits for space solar cell and TPV cells, since electrochemical characterization of the above cell structures, if properly designed can provide many useful structural and electrical material information virtually at any depth inside various layers and at the interfaces. This, could have been applied for step-by-step process optimization, which could have been used for fabrication of new generation high efficiency, low cost space PV and TPV cells. The four projects were as follows: (1) Electrochemical characterization of Germanium Substrates and Structures for TPV and other Device applications; (2) Electrochemical characterization of InP and GaAs based structures grown on InP, GaAs, and Si of Ge substrates for space solar cell applications; (3) Electrochemical characterization of InGaAs based structures grown on Ge Substrates,using InP as a buffer layer for TPV applications; (4) Electrochemical characterization of InSb and InAs bases structures for TPV applications.

  16. Investigation of the energy spectra and the electron-hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer

    NASA Astrophysics Data System (ADS)

    Gorshkov, Alexey P.; Volkova, Natalia S.; Istomin, Leonid A.; Zdoroveishev, Anton V.; Levichev, Sergey

    2016-08-01

    The effects of indium composition and the thickness of the combined InGaAs/GaAs thin cap layer on the energy spectra and relative electron-hole alignment of InAs quantum dots (QDs) grown by metal organic vapor phase epitaxy (MOVPE) are investigated by photoelectrical spectroscopy in a semiconductor/electrolyte system. In structures with InAs QDs and an InGaAs strain reducing layer, the shift of the hole's wave function to the QDs' top was revealed, which indicates In enrichment of the area near the top of QD'. In structures with an ultrathin GaAs cap layer a change of the sign of the built-in dipole moment was observed. This is explained by coupling effects of quantum-confined electrons with surface states.

  17. The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties

    NASA Astrophysics Data System (ADS)

    Zizeng, Lin; Mingmin, Cao; Shengkai, Wang; Qi, Li; Gongli, Xiao; Xi, Gao; Honggang, Liu; Haiou, Li

    2016-02-01

    The impact of nitridation and sulfur passivation for In0 53Ga0 47As surfaces on the Al/Al2O3/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ΔNbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with (NH4/2Sx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 × 1011 cm-2 eV-1. Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031, 61464003), the Guangxi Natural Science Foundation (Nos. 2013GXNSFGA019003, 2013GXNSFAA019335), the Project (No. 9140C140101140C14069), the Innovation Project of GUET Graduate Education (No. YJCXS201529), and the National Science & Technology Major Project of China (No. 2011ZX02708-003).

  18. Radiation performance of AlGaAs concentrator cells and expected performance of cascade structures

    NASA Technical Reports Server (NTRS)

    Curtis, Henry B.; Swartz, Clifford K.; Hart, Russell E., Jr.

    1987-01-01

    Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1 MeV electrons and 37 MeV protons. These cells are candidates for individual cells in a cascade structure. Data is presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AMO. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series connected and separately connected structures are investigated.

  19. MT6425CA: a 640 X 512-25μm CTIA ROIC for SWIR InGaAs detector arrays

    NASA Astrophysics Data System (ADS)

    Eminoglu, Selim; Mahsereci, Yigit Uygar; Altiner, Caglar; Akin, Tayfun

    2012-06-01

    This paper reports the development of a new CTIA ROIC (MT6425CA) suitable for SWIR InGaAs detector arrays. MT6425CA has a format of 640 × 512 with a pixel pitch of 25 μm and has a system-on-chip architecture, where all the critical timing and biasing for this ROIC are generated by programmable blocks on-chip. MT6425CA is a highly configurable and flexible ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. The ROIC runs on 3.3V supply voltage at nominal clock speed of 10 MHz clock. It performs snapshot operation both using Integrate-Then-Read (ITR) and Integrate-While- Read (IWR) modes. The CTIA type pixel input circuitry has a full-well-capacity (FWC) of about 320,000e-, with an input referred read noise of less than 110e- at 300K. MT6425CA has programmable number of outputs, where 4, 2, or 1 output can be selected along with an analog reference for pseudo-differential operation. The integration time can be programmed up to 1s in steps of 0.1μs. The gain and offset in the ROIC can be programmed to adjust the output offset and voltage swing. ROIC dissipates less than 130mW from a 3.3V supply at full speed and full frame size with 4 outputs, providing both low-power and low-noise operation. MT6425CA is fabricated using a modern mixed-signal CMOS process on 200mm CMOS wafers with a high yield above 75%, yielding more than 50 working parts per wafer. It has been silicon verified, and tested parts are available either in wafer and die levels with a complete documentation including test reports and wafer maps. A USB based camera electronics and camera development platform with software are available to help customers to evaluate the imaging performance of MT6425CA in a fast and efficient way.

  20. Screening nuclear field fluctuations to generate highly indistinguishable photons from negatively charged self-assembled InGaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Malein, Ralph; Santana, Ted; Zajac, Joanna; Petroff, Pierre; Gerardot, Brian

    2015-03-01

    Quantum dots (QDs) can generate highly coherent and indistinguishable single photons. However, a ground-state electron spin interacts with a QD's nuclear spins to create an effective Overhauser field (δBn) of ~30mT. We probe this interaction using resonance fluorescence. We observe the effect of δBn in high resolution (27 MHz) spectroscopy of the elastic and inelastic scattered photons, and characterize the effect of δBn on photon indistinguishability by monitoring the visibility of two-photon interference. With no external magnetic field (Bz = 0), δBn effectively splits the ground state, and at low Rabi frequencies we observe two broad (Γ = 200 MHz) peaks equally spaced by ~100MHz from the central elastic peak. The ratio of elastic to inelastic photons in the spectra gives a dephasing time T2 = 0 . 52T1 = 406 ps, far from the transform limit. With an external field Bz > δBn , we can successfully screen the fluctuating nuclear field. For Bz = 300 mT, nearly all photons in the spectrum are elastically scattered and we extract T2 = 1 . 94T1 = 1512 ps. This transform limited linewidth enables us to demonstrate very high visibility two-photon interference. These results point towards robust generation of indistinguishable photons.

  1. Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.

    PubMed

    Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E

    2015-09-25

    Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.

  2. Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications

    NASA Astrophysics Data System (ADS)

    Mintairov, S. A.; Kalyuzhnyy, N. A.; Lantratov, V. M.; Maximov, M. V.; Nadtochiy, A. M.; Rouvimov, Sergei; Zhukov, A. E.

    2015-09-01

    Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm-2 for the terrestrial spectrum and by 4.1 mA cm-2 for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm-1 and 37 A cm-2 per layer, respectively.

  3. TEM study of dislocations structure in In0.82Ga0.18As/InP heterostructure with InGaAs as buffer layer

    NASA Astrophysics Data System (ADS)

    Zhao, Liang; Guo, Zuo-xing; Yuan, De-zeng; Wei, Qiu-lin; Zhao, Lei

    2016-05-01

    In order to improve the quality of detector, In x Ga1- x As ( x=0.82) buffer layer has been introduced in In0.82Ga0.18As/InP heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The dislocations are effectively suppressed in In x Ga1- x As ( x=0.82) buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation (MD). The threading dislocations (TDs) are directly related to the multiplication of the MDs in buffer layer.

  4. Probing structure-induced optical behavior in a new class of self-activated luminescent 0D/1D CaWO₄ metal oxide – CdSe nanocrystal composite heterostructures

    SciTech Connect

    Han, Jinkyu; McBean, Coray; Wang, Lei; Hoy, Jessica; Jaye, Cherno; Liu, Haiqing; Li, Zhuo-Qun; Sfeir, Matthew Y.; Fischer, Daniel A.; Taylor, Gordon T.; Misewich, James A.; Wong, Stanislaus S.

    2015-01-30

    In this report, we synthesize and characterize the structural and optical properties of novel heterostructures composed of (i) semiconducting nanocrystalline CdSe quantum dot (QDs) coupled with (ii) both one and zero-dimensional (1D and 0D) motifs of self-activated luminescence CaWO₄ metal oxides. Specifically, ~4 nm CdSe QDs have been anchored onto (i) high-aspect ratio 1D nanowires, measuring ~230 nm in diameter and ~3 μm in length, as well as onto (ii) crystalline 0D nanoparticles (possessing an average diameter of ~ 80 nm) of CaWO₄ through the mediation of 3-mercaptopropionic acid (MPA) as a connecting linker. Composite formation was confirmed by complementary electron microscopy and spectroscopy (i.e. IR and Raman) data. In terms of luminescent properties, our results show that our 1D and 0D heterostructures evince photoluminescence (PL) quenching and shortened PL lifetimes of CaWO₄ as compared with unbound CaWO₄. We propose that a photo-induced electron transfer process occurs from CaWO₄ to CdSe QDs, a scenario which has been confirmed by NEXAFS measurements and which highlights a decrease in the number of unoccupied orbitals in the conduction bands of CdSe QDs. By contrast, the PL signature and lifetimes of MPA-capped CdSe QDs within these heterostructures do not exhibit noticeable changes as compared with unbound MPA-capped CdSe QDs. The striking difference in optical behavior between CaWO₄ nanostructures and CdSe QDs within our heterostructures can be correlated with the relative positions of their conduction and valence energy band levels. In addition, the PL quenching behaviors for CaWO₄ within the heterostructure configuration were examined by systematically varying (i) the quantities and coverage densities of CdSe QDs as well as (ii) the intrinsic morphology (and by extension, the inherent crystallite size) of CaWO₄ itself.

  5. Optical and structural properties of an Eu implanted gallium nitride quantum dots/aluminium nitride superlattice.

    PubMed

    Peres, M; Neves, A J; Monteiro, T; Magalhães, S; Franco, N; Lorenz, K; Alves, E; Damilano, B; Massies, J; Dussaigne, A; Grandjean, N

    2010-04-01

    GaN/AIN structures made of GaN quantum dots (QDs) separated by AIN spacer layers, were doped with Europium by ion implantation. Rutherford Backscattering/Channelling measurements showed that Eu is incorporated mainly on near-substitutional cation sites within the superlattice region. Only slight deterioration of the crystal quality and no intermixing of the different layers are observed after implantation and annealing. After thermal annealing, photoluminescence associated with Eu3+ ions was observed. From its behaviour under different photon energy excitation and sample temperature we concluded that the Eu-related emitting centres are located inside the GaN QDs or dispersed in the GaN and AIN buffer or spacer layers. The 624 nm PL line, associated with Eu-doped GaN QDs, shows very low thermal quenching, suggesting recombination of confined carriers through rare-earth ion excitation.

  6. Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Pan, Wenwu; Wu, Xiaoyan; Liu, Juanjuan; Cao, Chunfang; Wang, Shumin; Gong, Qian

    2016-06-01

    InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.

  7. Electrochemical Characterization of Semiconductor Materials and Structures

    NASA Technical Reports Server (NTRS)

    1997-01-01

    For a period covering October 1, 1995 through August 12, 1996, the research group at CSU has conducted theoretical and experimental research on "Electrochemical Characterization of Semiconductor Materials and Structures. " The objective of this investigation was to demonstrate the applicability of electrochemical techniques for characterization of complex device structures based on InP and GaAs, Ge, InGaAs, InSb, InAs and InSb, including: (1) accurate EC-V net majority carrier concentration depth profiling, and (2) surface and bulk structural and electrical type defect densities. Our motivation for this R&D effort was as follows: "Advanced space solar cells and ThermoPhotoVoltaic (TPV) cells are fabricated using a large variety of III-V materials based on InP and GaAs for solar cells and low bandgap materials such as Ge, InGaAs, InAs and InSb for TPV applications. At the present time for complex device structures using these materials, however, there is no simple way to assess the quality of these structures prior to device fabrication. Therefore, process optimization is a very time consuming and a costly endeavor". Completion of this R&D effort would have had unquestionable benefits for space solar cell and TPV cells, since electrochemical characterization of the above cell structures, if properly designed can provide many useful structural and electrical material information virtually at any depth inside various layers and at the interfaces. This, could have been applied for step-by-step process optimization, which could have been used for fabrication of new generation high efficiency, low cost space PV and TPV cells.

  8. Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

    NASA Technical Reports Server (NTRS)

    Alterovitz, Samuel A.; Sekula-Moise, Patricia A.; Sieg, Robert M.; Drotos, Mark N.; Bogner, Nancy A.

    1992-01-01

    An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

  9. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  10. Self-organized tubular structures as platforms for quantum dots.

    PubMed

    Makki, Rabih; Ji, Xin; Mattoussi, Hedi; Steinbock, Oliver

    2014-04-30

    The combination of top-down and bottom-up approaches offers great opportunities for the production of complex materials and devices. We demonstrate this approach by incorporating luminescent CdSe-ZnS nanoparticles into macroscopic tube structures that form as the result of externally controlled self-organization. The 1-2 mm wide hollow tubes consist of silica-supported zinc oxide/hydroxide and are formed by controlled injection of aqueous zinc sulfate into a sodium silicate solution. The primary growth region at the top of the tube is pinned to a robotic arm that moves upward at constant speed. Dispersed within the injected zinc solution are 3.4 nm CdSe-ZnS quantum dots (QDs) capped by DHLA-PEG-OCH3 ligands. Fluorescence measurements of the washed and dried tubes reveal the presence of trapped QDs at an estimated number density of 10(10) QDs per millimeter of tube length. The successful inclusion of the nanoparticles is further supported by electron microscopy and energy dispersive X-ray spectroscopy, with the latter suggesting a nearly homogeneous QD distribution across the tube wall. Exposure of the samples to copper sulfate solution induces quenching of about 90% of the tubes' fluorescence intensity. This quenching shows that the large majority of the QDs is chemically accessible within the microporous, about 15-μm-wide tube wall. We suggest possible applications of such QD-hosting tube systems as convenient sensors in microfluidic and related applications. PMID:24702437

  11. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    PubMed

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  12. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    PubMed

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure. PMID:27302495

  13. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Wang, R. F.; Zhang, J.; Li, H. S.; Zhang, J.; Qiu, F.; Yang, J.; Wang, C.; Yang, Y.

    2016-07-01

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  14. Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)-Based Chemistries: Part II: InP, InGaAs, InGaAsP, InAs and AllnAs

    SciTech Connect

    Abernathy, C.R.; Han, J.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Lee, J.W.; Maeda, T.; Pearton, S.J.; Shul, R.J

    1998-12-02

    A parametric study of etch rates and surface morphologies of In-containing compound semiconductors (InP, InGaAs, InGaAsP, InAs and AlInAs) obtained by BClj-based Inductively Coupled Plasmas is reported. Etch rates in the range 1,500-3,000 &min. are obtained for all the materials at moderate source powers (500 W), with the rates being a strong function of discharge composition, rf chuck power and pressure. Typical root-mean-square surface roughness of-5 nm were obtained for InP, which is worse than the values obtained for Ga-based materials under the same conditions (-1 run). The near surface of etched samples is typically slightly deficient in the group V element, but the depth of this deficiency is small (a few tens of angstroms).

  15. Anisotropic Transport of Electrons in a Novel FET Channel with Chains of InGaAs Nano-Islands Embedded along Quasi-Periodic Multi-Atomic Steps on Vicinal (111)B GaAs

    SciTech Connect

    Akiyama, Y.; Kawazu, T.; Noda, T.; Sakaki, H.

    2010-01-04

    We have studied electron transport in n-AlGaAs/GaAs heterojunction FET channels, in which chains of InGaAs nano-islands are embedded along quasi-periodic steps. By using two samples, conductance G{sub para}(V{sub g}) parallel to the steps and G{sub perp}(V{sub g}) perpendicular to them were measured at 80 K as functions of gate voltage V{sub g}. At sufficiently high V{sub g}, G{sub para} at 80 K is several times as high as G{sub perp}, which manifests the anisotropic two-dimensional transport of electrons. When V{sub g} is reduced to -0.7 V, G{sub perp} almost vanishes, while {sub Gpara} stays sizable unless V{sub g} is set below -0.8 V. These results indicate that 'inter-chain' barriers play stronger roles than 'intra-chain' barriers.

  16. Quantum Yield Heterogeneity among Single Nonblinking Quantum Dots Revealed by Atomic Structure-Quantum Optics Correlation.

    PubMed

    Orfield, Noah J; McBride, James R; Wang, Feng; Buck, Matthew R; Keene, Joseph D; Reid, Kemar R; Htoon, Han; Hollingsworth, Jennifer A; Rosenthal, Sandra J

    2016-02-23

    Physical variations in colloidal nanostructures give rise to heterogeneity in expressed optical behavior. This correlation between nanoscale structure and function demands interrogation of both atomic structure and photophysics at the level of single nanostructures to be fully understood. Herein, by conducting detailed analyses of fine atomic structure, chemical composition, and time-resolved single-photon photoluminescence data for the same individual nanocrystals, we reveal inhomogeneity in the quantum yields of single nonblinking "giant" CdSe/CdS core/shell quantum dots (g-QDs). We find that each g-QD possesses distinctive single exciton and biexciton quantum yields that result mainly from variations in the degree of charging, rather than from volume or structure inhomogeneity. We further establish that there is a very limited nonemissive "dark" fraction (<2%) among the studied g-QDs and present direct evidence that the g-QD core must lack inorganic passivation for the g-QD to be "dark". Therefore, in contrast to conventional QDs, ensemble photoluminescence quantum yield is principally defined by charging processes rather than the existence of dark g-QDs.

  17. Aggregation of quantum dots in hybrid structures based on TiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Kolesova, Ekaterina P.; Orlova, Anna O.; Maslov, Vladimir G.; Gun'ko, Yurii K.; Cleary, Olan; Baranov, Aleksander V.; Fedorov, Anatoly V.

    2016-04-01

    A morphology and photoinduced changes of luminescence properties of two types of hybrid structures based on TiO2 nanoparticles and CdSe/ZnS QDs were examined. A spin-coating method and a modified Langmuir- Blodgett technique have been applied to form the multilayer hybrid structures on glass slides. It was demonstrated that uniformity of QD surface concentration in hybrid structures depends on the method of structure formation. A photodegradation of luminescence properties of the structures is associated with the formation of QD aggregates. The QD aggregate concentration and their size depend on the method of the structure formation and the concentration of TiO2 nanoparticles. A decay of luminescence of QD aggregates in hybrid structures contains a microsecond components. An exposure of the hybrid structures with uniform QD surface concentration by visible light resulted in a photopassivation of their surface, which is accompanied by significant increase of luminescence quantum yield of QDs.

  18. Quantum dots based mesoporous structured imprinting microspheres for the sensitive fluorescent detection of phycocyanin.

    PubMed

    Zhang, Zhong; Li, Jinhua; Wang, Xiaoyan; Shen, Dazhong; Chen, Lingxin

    2015-05-01

    Phycocyanin with important physiological/environmental significance has attracted increasing attention; versatile molecularly imprinted polymers (MIPs) have been applied to diverse species, but protein imprinting is still quite difficult. Herein, using phycocyanin as template via a sol-gel process, we developed a novel fluorescent probe for specific recognition and sensitive detection of phycocyanin by quantum dots (QDs) based mesoporous structured imprinting microspheres (SiO2@QDs@ms-MIPs), obeying electron-transfer-induced fluorescence quenching mechanism. When phycocyanin was present, a Meisenheimer complex would be produced between phycocyanin and primary amino groups of QDs surface, and then the photoluminescent energy of QDs would be transferred to the complex, leading to the fluorescence quenching of QDs. As a result, the fluorescent intensity of the SiO2@QDs@ms-MIPs was significantly decreased within 8 min, and accordingly a favorable linearity within 0.02-0.8 μM and a high detectability of 5.9 nM were presented. Excellent recognition specificity for phycocyanin over its analogues was displayed, with a high imprinting factor of 4.72. Furthermore, the validated probe strategy was successfully applied to seawater and lake water sample analysis, and high recoveries in the range of 94.0-105.0% were attained at three spiking levels of phycocyanin, with precisions below 5.3%. The study provided promising perspectives to develop fluorescent probes for convenient, rapid recognition and sensitive detection of trace proteins from complex matrices, and further pushed forward protein imprinting research. PMID:25875154

  19. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M.; Lin, Y. H.; Goldman, R. S.

    2013-08-19

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  20. Regular Arrays of QDs by Solution Processing

    NASA Astrophysics Data System (ADS)

    Oliva, Brittany L.

    2011-12-01

    Hydrophilic silicon and germanium quantum dots were synthesized by a "bottom-up" method utilizing micelles to control particle size. Liquid phase deposition of silica on these quantum dots was successful with and without DTAB (dodecyltrimethylammonium bromide) as a surfactant to yield uniform spheres. Coating the quantum dots in the presence of DTAB allowed for better size control. The silica coated quantum dots were then arrayed in three dimensions using a vertical deposition technique on quartz slides or ITO glass. UV-vis absorbance, AFM, SEM, and TEM images were used to analyze the particles at every stage. The photoconductivity of the arrays was tested, and the cells were found to be conductive in areas.

  1. Size-confined fixed-composition and composition-dependent engineered band gap alloying induces different internal structures in L-cysteine-capped alloyed quaternary CdZnTeS quantum dots

    NASA Astrophysics Data System (ADS)

    Adegoke, Oluwasesan; Park, Enoch Y.

    2016-06-01

    The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27–61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72–93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying.

  2. Size-confined fixed-composition and composition-dependent engineered band gap alloying induces different internal structures in L-cysteine-capped alloyed quaternary CdZnTeS quantum dots.

    PubMed

    Adegoke, Oluwasesan; Park, Enoch Y

    2016-01-01

    The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27-61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72-93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying. PMID:27250067

  3. Size-confined fixed-composition and composition-dependent engineered band gap alloying induces different internal structures in L-cysteine-capped alloyed quaternary CdZnTeS quantum dots

    PubMed Central

    Adegoke, Oluwasesan; Park, Enoch Y.

    2016-01-01

    The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27–61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72–93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying. PMID:27250067

  4. Structural and Optical Properties of SnxGe1-x thin films and Quantum Dots

    NASA Astrophysics Data System (ADS)

    Blacksberg, Jordana

    2005-03-01

    SnxGe1-x layers and quantum dots (QDs) are of great interest as materials that could provide tunable direct band gaps, allowing completely group IV-based optoelectronic devices. These materials could be used in a wide range of applications such as emitters, infrared detectors, and thermophotovoltaics. However, substantial challenges remain in the growth and processing of these materials. We have grown SnxGe1-x films by Molecular Beam Epitaxy (MBE), using low growth temperatures (<200^oC) in order to grow fully strained layers. X-ray diffraction, transmission electron microscopy, and Rutherford backscattering spectroscopy data indicate high-quality epitaxial films. Post-growth annealing was used to form QDs. Either QDs or quantum wires may be formed depending on annealing parameters. The effects of varying substrate temperature between 400C (wires) and 750C (QDs) on size and distribution of quantum structures were explored and will be discussed. Sn concentration (0-10%) and film thickness (40nm - 200nm) were also varied. Optical properties probed by Fourier transform infrared spectroscopy (FTIR) will be presented. FTIR spectra clearly show the decrease in band gap of SnxGe1-x layers with increasing Sn fraction up to 10%. Photomodulated reflectance (PR) is another sensitive method for probing critical points in SnxGe1-x band structure, and can detect both direct and indirect transitions. PR results for SnxGe1-x layers will also be discussed.

  5. Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures

    NASA Astrophysics Data System (ADS)

    Kolomys, O. F.; Strelchuk, V. V.; Shamirzaev, T. S.; Romanyuk, A. S.; Tronc, P.

    2012-11-01

    Two-period structures with and without vertical coupling between indirect and direct bandgap InAs quantum dots (QDs) both with type I band alignment, grown by molecular-beam epitaxy, were investigated by confocal Raman and photoluminescence (PL) microspectroscopy. The observed blue shift of PL band of the indirect (direct) bandgap QD by 20 (80) meV with decrease of thickness of Ga(Al)As intermediate layer between two InAs QD layers from 30 to 8 nm is considered as caused by increase of elastic strains (decrease of QDs sizes) in QD layers and by coupling between QDs electronic states. Scanning confocal resonant Raman microspectroscopy was applied for non-destructive evaluation of composition at various depths along the thickness of vertical coupling of the upper InAs/AlGaAs and lower InAs/AlAs QDs layers of the sandwich structures. Based on the analysis of determined from the in-depth Raman spectra optical phonons frequencies, the depth distribution of composition in InAlAs and GaAlAs alloy layers formed as a result of strain-driven enhanced interdiffusion was determined.

  6. Synthesis, Structural and Optical Characterization of CdTeSe/ZnSe and CdTeSe/ZnTe Core/Shell Ternary Quantum Dots for Potential Application in Solar Cells

    NASA Astrophysics Data System (ADS)

    Hung, Le Xuan; Thang, Pham Nam; Van Nong, Hoang; Yen, Nguyen Hai; Chinh, Vu Đuc; Van Vu, Le; Hien, Nguyen Thi Thuc; de Marcillac, Willy Daney; Hong, Phan Ngoc; Loan, Nguyen Thu; Schwob, Catherine; Maître, Agnès; Liem, Nguyen Quang; Bénalloul, Paul; Coolen, Laurent; Nga, Pham Thu

    2016-08-01

    This work presents the results on the fabrication, structural and optical properties of CdTeSe/ZnTe and CdTeSe/ZnSe n monolayers (ML) (with n = 0,1,2,4 and 6 being the nominal shell monolayer thickness) ternary alloyed core/shell quantum dots (QDs). Transmission electron microscopy has been used to observe the shape and size of the QDs. These QDs crystallize at the zinc-blende phase. Raman scattering has been used to characterize the CdTeSe QDs' alloy composition in the fabrication and coating processes. The Raman spectrum of CdTeSe QDs, in the frequency range from 100 cm-1 to 300 cm-1, is a composite band with two peaks at 160 cm-1 and 192 cm-1. When the thickness of the ZnTe shell is 4 ML, the peak of the Raman spectrum only appears at 160 cm-1. For the ZnSe 4 ML shell, the peak only appears at ˜200 cm-1. This shows that the nature of the CdTeSe QDs is either CdTe-rich or CdSe-rich depending on the shell of each sample. The shell thickness of 2 ML does not change the ternary core QDs' crystalline phase. The absorption and photoluminescence spectra show that the absorption and emission bands can be shifted to 900 nm, depending on each ternary alloyed QD core/shell sample. This near-infrared spectrum region is suitable for applications in solar cells.

  7. Structuralism.

    ERIC Educational Resources Information Center

    Piaget, Jean

    Provided is an overview of the analytical method known as structuralism. The first chapter discusses the three key components of the concept of a structure: the view of a system as a whole instead of so many parts; the study of the transformations in the system; and the fact that these transformations never lead beyond the system but always…

  8. Spectral Barcoding of Quantum Dots: Deciphering Structural Motifs from the Excitonic Spectra

    SciTech Connect

    Mlinar, V.; Zunger, A.

    2009-01-01

    Self-assembled semiconductor quantum dots (QDs) show in high-resolution single-dot spectra a multitude of sharp lines, resembling a barcode, due to various neutral and charged exciton complexes. Here we propose the 'spectral barcoding' method that deciphers structural motifs of dots by using such barcode as input to an artificial-intelligence learning system. Thus, we invert the common practice of deducing spectra from structure by deducing structure from spectra. This approach (i) lays the foundation for building a much needed structure-spectra understanding for large nanostructures and (ii) can guide future design of desired optical features of QDs by controlling during growth only those structural motifs that decide given optical features.

  9. Control of a resonant tunneling structure by intense laser fields

    NASA Astrophysics Data System (ADS)

    Aktas, S.; Kes, H.; Boz, F. K.; Okan, S. E.

    2016-10-01

    The intense laser field effects on a resonant tunneling structure were studied using computational methods. The considered structure was a GaAs/InxGa1-xAs/Al0.3Ga0.7As/InyGa1-yAs/AlAs/GaAs well-barrier system. In the presence of intense laser fields, the transmission coefficient and the dwell time of the structure were calculated depending on the depth and the width of InGaAs wells. It was shown that an intense laser field provides full control on the performance of the device as the geometrical restrictions on the resonant tunneling conditions overcome. Also, the choice of the resonant energy value becomes possible depending on the field strength.

  10. Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure

    PubMed Central

    Yu, Jiadong; Wang, Lai; Di Yang; Zheng, Jiyuan; Xing, Yuchen; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

    2016-01-01

    The spin and optical polarization based on a coupled InGaN/GaN quantum well (QW) and quantum dots (QDs) structure is investigated. In this structure, spin-electrons can be temporarily stored in QW, and spin injection from the QW into QDs via spin-conserved tunneling is enabled. Spin relaxation can be suppressed owing to the small energy difference between the initial state in the QW and the final states in the QDs. Photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements are carried out on optical spin-injection and -detection. Owing to the coupled structure, spin-conserved tunneling mechanism plays a significant role in preventing spin relaxation process. As a result, a higher circular polarization degree (CPD) (~49.1%) is achieved compared with conventional single layer of QDs structure. Moreover, spin relaxation time is also extended to about 2.43 ns due to the weaker state-filling effect. This coupled structure is believed an appropriate candidate for realization of spin-polarized light source. PMID:27759099

  11. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  12. Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain

    SciTech Connect

    Kim, Jeonghee Laurent, Matthew A.; Li, Haoran; Lal, Shalini; Mishra, Umesh K.

    2015-01-12

    This letter reports the influence of the added InGaN interlayer on reducing the inherent interfacial barrier and hence improving the electrical characteristics of wafer-bonded current aperture vertical electron transistors consisting of an InGaAs channel and N-polar GaN drain. The current-voltage characteristics of the transistors show that the implementation of N-polar InGaN interlayer effectively reduces the barrier to electron transport across the wafer-bonded interface most likely due to its polarization induced downward band bending, which increases the electron tunneling probability. Fully functional wafer-bonded transistors with nearly 600 mA/mm of drain current at V{sub GS} = 0 V and L{sub go} = 2 μm have been achieved, and thus demonstrate the feasibility of using wafer-bonded heterostructures for applications that require active carrier transport through both materials.

  13. Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Kong, Eugene Y.-J.; Ivana; Zhang, Xingui; Zhou, Qian; Pan, Jisheng; Zhang, Zheng; Yeo, Yee-Chia

    2013-07-01

    The formation of salicide-like source/drain contacts on III-V MOSFETs necessitates a search for suitable metals that can react with III-V materials to form ohmic contacts with low sheet resistance and contact resistivity. To advance this search, the reaction between Pd and In0.53Ga0.47As is explored in this work. Reaction temperatures ranging from 200 to 400 °C were investigated, and extensive physical and electrical characterization was performed. Pd completely reacts with In0.53Ga0.47As after annealing at temperatures as low as 200 °C for 60 s to form a very smooth and uniform Pd-InGaAs film with good interfacial quality. Pd-InGaAs formed at 250 °C was found to have a work function of ˜4.6 ± 0.1 eV, sheet resistance of ˜77.3 Ω/square for a thickness of 20 nm, and contact resistivity of ˜8.35 × 10-5 Ω cm2 on In0.53Ga0.47As with n-type active doping concentration of ˜2 × 1018 cm-3. With further development, Pd-InGaAs could potentially be useful as self-aligned contacts for InGaAs transistors.

  14. Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices

    NASA Astrophysics Data System (ADS)

    Jin, C. Y.; Kojima, O.; Inoue, T.; Kita, T.; Wada, O.; Hopkinson, M.; Akahane, K.

    2010-02-01

    An all-optical switching device has been proposed by using self-assembled InAs/GaAs quantum dots (QDs) within a vertical cavity structure for ultrafast optical communications. This device has several desirable properties, such as the ultra-low power consumption, the micrometre size, and the polarization insensitive operation. Due to the threedimensional confined carrier state and the broad size distribution of self-assembled InAs/GaAs QDs, it is crucial to enhance the interaction between QDs and the cavity with appropriately designed 1D periodic structure. Significant QD/cavity nonlinearity is theoretically observed by increasing the GaAs/AlAs pair number of the bottom mirror. By this consideration, we have fabricated vertical-reflection type QD switches with 12 periods of GaAs/Al0.8Ga0.2As for the top mirror and 25 periods for the bottom mirror to give an asymmetric vertical cavity. Optical switching via the QD excited state exhibits a fast switching process with a time constant down to 23 ps, confirming that the fast intersubband relaxation of carriers inside QDs is an effective means to speed up the switching process. A technique by changing the light incident angle realizes wavelength tunability over 30 nm for the QD/cavity switch.

  15. Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

    PubMed Central

    2014-01-01

    Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%. PACS 81.07.Ta; 78.67.Pt; 88.40.jj PMID:25489285

  16. Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures

    SciTech Connect

    Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C.

    2007-09-01

    Self-assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on n{sup +}-GaAs substrates, capped between 0.4 {mu}m thick n-type GaAs layers with electron concentration of 1x10{sup 16} cm{sup -3}. The effect of rapid thermal annealing at 700 deg. C for 60 s on the noise properties of the structure has been investigated using Au/n-GaAs Schottky diodes as test devices. In the reference sample without containing QDs, the noise spectra show a generation-recombination (g-r) noise behavior due to a discrete energy level located about 0.51 eV below the conduction band edge. This trap is ascribed to the M4 (or EL3) trap in GaAs MBE layers, related to a chemical impurity-native defect complex. In the structure with embedded QDs, the observed g-r noise spectra are due to a midgap trap level ascribed to the EL2 trap in GaAs, which is related to the InAs QDs dissolution due to the thermal treatment.

  17. Impact of heterogeneous passivation of trimethylphosphine oxide and di-methylphosphine oxide surface ligands on the electronic structure of CdnSen (n=6, 15) quantum dots: A DFT study

    NASA Astrophysics Data System (ADS)

    Ganesan, Paramasivam; Lakshmipathi, Senthilkumar

    2016-09-01

    We report the significant influence of multiple capping ligands such as tri-methylphosphine oxide (TMPO) and di-methylphosphine oxide (DMPO) on the surface morphology and electronic structure of CdnSen (n=6, 15) quantum dots (QDs) using density functional theory (DFT). From the structural parameters the TMPO passivated structures shows strong structural distortion along non-polar 11 2 bar 0 surface. Besides, the binding energy values indicate that the TMPO ligands are weakly bound to 11 2 bar 0 surface. On introducing DMPO at 11 2 bar 0 non-polar surface from binding energy values, we observe significant surface reconstruction and stabilization of the structure due to the Se-H dative bond in addition to strong Cd-O bond. The NBO analysis indicates that charge transfer is maximum between metal and ligand in 11 2 bar 0 surface. The results of PDOS and molecular orbital (MO) analyses show that DMPO ligands significantly contribute to the occupied molecular orbitals near HOMO, which is not case in QDs with pure TMPO ligand. Further, the absorption spectra of CdSe QDs indicate that optical gaps are blue shifted by DMPOs. Hence, the multiple ligands can be employed in tuning the desired structural and optoelectronic properties of colloidal QDs (CQDs).

  18. Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES

    NASA Astrophysics Data System (ADS)

    Bouravleuv, A. D.; Lev, L. L.; Piamonteze, C.; Wang, X.; Schmitt, T.; Khrebtov, A. I.; Samsonenko, Yu B.; Kanski, J.; Cirlin, G. E.; Strocov, V. N.

    2016-10-01

    Electronic structure of a molecular beam epitaxy-grown system of (In,Mn)As quantum dots (QDs) buried in GaAs is explored with soft-x-ray angle-resolved photoelectron spectroscopy (ARPES) using photon energies around 1 keV. This technique, ideally suited for buried systems, extends the momentum-resolving capabilities of conventional ARPES with enhanced probing depth as well as elemental and chemical state specificity achieved with resonant photoexcitation. The experimental results resolve the dispersive energy bands of the GaAs substrate buried in ∼2 nm below the surface, and the impurity states (ISs) derived from the substitutional Mn atoms in the (In,Mn)As QDs and oxidized Mn atoms distributed near the surface. An energy shift of the Mn ISs in the QDs compared to (In,Mn)As DMS is attributed to the band offset and proximity effect at the interface with the surrounding GaAs. The absence of any ISs in the vicinity of the VBM relates the electron transport in (In,Mn)As QDs to the prototype (In,Mn)As diluted magnetic semiconductor. The SX-ARPES results are supported by measurements of the shallow core levels under variation of probing depth through photon energy. X-ray absorption measurements identify significant diffusion of interstitial Mn atoms out of the QDs towards the surface, and the role of magnetic circular dichroism is to block the ferromagnetic response of the (In,Mn)As QDs. Possible routes are drawn to tune the growth procedure aiming at practical applications of the (In,Mn)As based systems.

  19. Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES.

    PubMed

    Bouravleuv, A D; Lev, L L; Piamonteze, C; Wang, X; Schmitt, T; Khrebtov, A I; Samsonenko, Yu B; Kanski, J; Cirlin, G E; Strocov, V N

    2016-10-21

    Electronic structure of a molecular beam epitaxy-grown system of (In,Mn)As quantum dots (QDs) buried in GaAs is explored with soft-x-ray angle-resolved photoelectron spectroscopy (ARPES) using photon energies around 1 keV. This technique, ideally suited for buried systems, extends the momentum-resolving capabilities of conventional ARPES with enhanced probing depth as well as elemental and chemical state specificity achieved with resonant photoexcitation. The experimental results resolve the dispersive energy bands of the GaAs substrate buried in ∼2 nm below the surface, and the impurity states (ISs) derived from the substitutional Mn atoms in the (In,Mn)As QDs and oxidized Mn atoms distributed near the surface. An energy shift of the Mn ISs in the QDs compared to (In,Mn)As DMS is attributed to the band offset and proximity effect at the interface with the surrounding GaAs. The absence of any ISs in the vicinity of the VBM relates the electron transport in (In,Mn)As QDs to the prototype (In,Mn)As diluted magnetic semiconductor. The SX-ARPES results are supported by measurements of the shallow core levels under variation of probing depth through photon energy. X-ray absorption measurements identify significant diffusion of interstitial Mn atoms out of the QDs towards the surface, and the role of magnetic circular dichroism is to block the ferromagnetic response of the (In,Mn)As QDs. Possible routes are drawn to tune the growth procedure aiming at practical applications of the (In,Mn)As based systems. PMID:27631689

  20. Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES.

    PubMed

    Bouravleuv, A D; Lev, L L; Piamonteze, C; Wang, X; Schmitt, T; Khrebtov, A I; Samsonenko, Yu B; Kanski, J; Cirlin, G E; Strocov, V N

    2016-10-21

    Electronic structure of a molecular beam epitaxy-grown system of (In,Mn)As quantum dots (QDs) buried in GaAs is explored with soft-x-ray angle-resolved photoelectron spectroscopy (ARPES) using photon energies around 1 keV. This technique, ideally suited for buried systems, extends the momentum-resolving capabilities of conventional ARPES with enhanced probing depth as well as elemental and chemical state specificity achieved with resonant photoexcitation. The experimental results resolve the dispersive energy bands of the GaAs substrate buried in ∼2 nm below the surface, and the impurity states (ISs) derived from the substitutional Mn atoms in the (In,Mn)As QDs and oxidized Mn atoms distributed near the surface. An energy shift of the Mn ISs in the QDs compared to (In,Mn)As DMS is attributed to the band offset and proximity effect at the interface with the surrounding GaAs. The absence of any ISs in the vicinity of the VBM relates the electron transport in (In,Mn)As QDs to the prototype (In,Mn)As diluted magnetic semiconductor. The SX-ARPES results are supported by measurements of the shallow core levels under variation of probing depth through photon energy. X-ray absorption measurements identify significant diffusion of interstitial Mn atoms out of the QDs towards the surface, and the role of magnetic circular dichroism is to block the ferromagnetic response of the (In,Mn)As QDs. Possible routes are drawn to tune the growth procedure aiming at practical applications of the (In,Mn)As based systems.

  1. Multi-Quantum Well Structures to Improve the Performance of Multijunction Solar Cells

    NASA Astrophysics Data System (ADS)

    Samberg, Joshua Paul

    Current, lattice matched triple junction solar cell efficiency is approximately 44% at a solar concentration of 942x. Higher efficiency for such cells can be realized with the development of a 1eV bandgap material lattice matched to Ge. One of the more promising materials for this application is that of the InGaAs/GaAsP multi-quantum well (MQW) structure. By inserting a stress/strain-balanced InGaAs/GaAsP MQW structure into the iregion of a GaAs p-i-n diode, the absorption edge of the p-i-n diode can be red shifted with respect to that of a standard GaAs p-n diode. Compressive stress in the InGaAs wells are balanced via GaAsP barriers subjected to tensile stress. Individually, the InGaAs and GaAsP layers are grown below their critical layer thickness to prevent the formation of misfit and threading dislocations. Until recently InGaAs/GaAsP MQWs have been somewhat hindered by their usage of low phosphorus-GaAsP barriers. Presented within is the development of a high-P composition GaAsP and the merits for using such a high composition of phosphorus are discussed. It is believed that these barriers represent the highest phosphorus content to date in such a structure. By using high composition GaAsP the carriers are collected via tunneling (for barriers .30A) as opposed to thermionic emission. Thus, by utilizing thin, high content GaAsP barriers one can increase the percentage of the intrinsic region in a p-i-n structure that is comprised of the InGaAs well in addition to increasing the number of periods that can be grown for a given depletion width. However, standard MQWs of this type inherently possess undesirable compressive strain and quantum size effects (QSE) that cause the optical absorption of the InGaAs wells to blue shift. To circumvent these deleterious QSEs stress balanced, pseudomorphic InGaAs/GaAsP staggered MQWs were developed. Tunneling is still a viable mode for carrier transport in the staggered MQW structures. GaAs interfacial layers within the multi

  2. Highly Reduced Fine-Structure Splitting in InAs/InP Quantum Dots Offering an Efficient On-Demand Entangled 1.55-μm Photon Emitter

    NASA Astrophysics Data System (ADS)

    He, Lixin; Gong, Ming; Li, Chuan-Feng; Guo, Guang-Can; Zunger, Alex

    2008-10-01

    To generate entangled photon pairs via quantum dots (QDs), the exciton fine-structure splitting (FSS) must be comparable to the exciton homogeneous linewidth. Yet in the (In,Ga)As/GaAs QD, the intrinsic FSS is about a few tens μeV. To achieve photon entanglement, it is necessary to cherry-pick a sample with extremely small FSS from a large number of samples or to apply a strong in-plane magnetic field. Using theoretical modeling of the fundamental causes of FSS in QDs, we predict that the intrinsic FSS of InAs/InP QDs is an order of magnitude smaller than that of InAs/GaAs dots, and, better yet, their excitonic gap matches the 1.55μm fiber optic wavelength and, therefore, offers efficient on-demand entangled photon emitters for long distance quantum communication.

  3. GaN quantum-dots integrated in the gate dielectric of metal-oxide-semiconductor structures for charge-storage applications

    NASA Astrophysics Data System (ADS)

    Dimitrakis, P.; Normand, P.; Bonafos, C.; Papadomanolaki, E.; Iliopoulos, E.

    2013-02-01

    Gallium nitride quantum dots (QDs) were investigated as discrete charge storage nodes embedded in the gate dielectric of metal-oxide-semiconductor (MOS) capacitors. The GaN QDs were formed on top of 3.5 nm-thick SiO2/n-Si(001) substrates by radiofrequency plasma-assisted molecular beam deposition. The MOS structures were studied by transmission electron microscopy. Deposition dose was determined as a critical process parameter to obtain two dimensional arrays of discrete QDs. The memory window width, programming speed, and charge retention time were evaluated for GaN QD devices with different deposition doses. All devices showed enhanced electron trapping leading to significant memory windows. Charge retention measurements, at room temperature, revealed that the sample with the lowest concentration of QDs exhibits a low charge loss with a significant extrapolated programming window after 10 yrs. The present study not only demonstrates GaN QD embedded SiO2 structures fabricated by a fully complementary metal oxide semiconductor compatible method but also points out that these structures are promising for the realization of nanofloating gate non-volatile memory devices.

  4. Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature

    SciTech Connect

    Golovynskyi, S. L.; Seravalli, L.; Trevisi, G.; Frigeri, P.; Gombia, E.; Dacenko, O. I.; Kondratenko, S. V.

    2015-06-07

    We present the study of optical and photoelectric properties of InAs quantum dots (QDs) grown on a metamorphic In{sub 0.15}Ga{sub 0.85}As buffer layer: such nanostructures show efficient light emission in the telecom window at 1.3 μm (0.95 eV) at room temperature. We prepared a sample with vertical geometry of contacts isolated from the GaAs substrate. The structure is found to be photosensitive in the spectral range above 0.9 eV at room temperature, showing distinctive features in the photovoltage and photocurrent spectra attributed to QDs, InAs wetting layer, and In{sub 0.15}Ga{sub 0.85}As metamorphic buffer, while a drop in the photoelectric signal above 1.36 eV is related to the GaAs layer. No effect of defect centers on the photoelectrical properties is found, although they are observed in the absorption spectrum. We conclude that metamorphic QDs have a low amount of interface-related defects close to the optically active region and charge carriers can be effectively collected into InAs QDs.

  5. Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

    SciTech Connect

    Dialynas, G. E.; Kalliakos, S.; Xenogianni, C.; Androulidaki, M.; Kehagias, T.; Komninou, P.; Savvidis, P. G.; Pelekanos, N. T.; Hatzopoulos, Z.

    2010-11-15

    The structural and optical properties of piezoelectric (211)B InAs nanostructures grown by molecular beam epitaxy are systematically investigated as a function of the various growth parameters. Depending on the specific growth conditions, we show that the InAs nanostructures take the form of a quantum dot (QD) or a quantum dash, their height ranges between 2 and 20 nm, and their density varies from a few times 10{sup 8} cm{sup -2} all the way up to a few times 10{sup 10} cm{sup -2}. The (211)B QDs are characterized by large aspect ratios, which are compatible with a truncated pyramid morphology. By analyzing the QD emission spectrum, we conclude that only small size QDs, with heights less than 3 nm, are optically active. This is consistent with high resolution transmission electron microscopy observations showing that large QDs contain misfit dislocations, whereas small QDs are dislocation-free. The formation of a two-dimensional wetting layer is observed optically, and its thickness is determined to be between 0.30 and 0.39 nm. Finally, the large blueshift in the QD emission observed with increasing excitation power represents a clear evidence of the strong built-in piezoelectric field present in these dots.

  6. InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

    SciTech Connect

    Keizer, J. G.; Koenraad, P. M.; Ulloa, J. M.; Utrilla, A. D.

    2014-02-03

    Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer system. With the advent of more exotic alloys, it has become clear that other mechanisms significantly alter the QD size and shape as well. Larger bond strengths, surfactants, and phase separation are known to act on QD properties but are far from being fully understood. In this study, we investigate at the atomic scale the influence of these effects on the morphology of capped QDs with cross-sectional scanning tunneling microscopy. A broad range of capping materials (InGaAs, GaAsSb, GaAsN, InGaAsN, and GaAsSbN) are compared. The QD morphology is related to photoluminescence characteristics.

  7. Colloidal graphene quantum dots with well-defined structures.

    PubMed

    Yan, Xin; Li, Binsong; Li, Liang-shi

    2013-10-15

    When the size of a semiconductor crystal is reduced to the nanometer scale, the crystal boundary significantly modifies electron distribution, making properties such as bandgap and energy relaxation dynamics size dependent. This phenomenon, known as quantum confinement, has been demonstrated in many semiconductor materials, leading to practical applications in areas such as bioimaging, photovoltaics, and light-emitting diodes. Graphene, a unique type of semiconductor, is a two-dimensional crystal with a zero bandgap and a zero effective mass of charge carriers. Consequently, we expect new phenomena from nanometer-sized graphene, or graphene quantum dots (QDs), because the energy of charge carriers in graphene follows size-scaling laws that differ from those in other semiconductors. From a chemistry point of view, graphene is made of carbon, an element for which researchers have developed a whole branch of chemistry. Thus, it is possible to synthesize graphene QDs through stepwise, well-controlled organic chemistry, achieving structures with an atomic precision that has not been possible for any other semiconductor materials. Recently, we developed a new solubilizing strategy that led to synthesis of stable colloidal graphene QDs with more than 100 conjugated carbon atoms, allowing us to study their properties in a new size regime. In this Account, we review our recent progress working with the colloidal graphene QDs, including their synthesis and stabilization, tuning of their properties, and new phenomena in energy relaxation dynamics. In particular, we have observed extraordinarily slow "electron cooling"--the relaxation of electrons from high excited states to lower ones. With further investigation, these high-energy electrons could potentially be harvested in solar energy applications, for example, creating more efficient photovoltaic cells. We discuss additional emerging opportunities with these new materials and current challenges, hoping to draw the interest

  8. Structural and electrophysical properties of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well

    SciTech Connect

    Galiev, G. B.; Vasiliev, A. L.; Vasil’evskii, I. S.; Imamov, R. M.; Klimov, E. A.; Klochkov, A. N.; Lavruhin, D. V.; Maltsev, P. P.; Pushkarev, S. S.; Trunkin, I. N.

    2015-05-15

    A complex investigation of structural and electrical properties of In{sub 0.52}Al{sub 0.48}As/In{sub y}Ga{sub 1−y}As/In{sub 0.52}Al{sub 0.48}As nanoheterostructures on InP substrates containing thin InAs and GaAs inserts in a quantum well (QW) has been performed. The GaAs nanolayers are grown at the QW boundaries between InGaAs and InAlAs layers, while the double InAs inserts are grown in InGaAs layers symmetrically with respect to the QW center. The layer and interface structures have been studied by transmission electron microscopy. It is shown that, when using the proposed epitaxial growth conditions, the introduction of ∼1.2-nm-thick InAs nanoinserts into the InGaAs QW and a ∼1-nm-thick GaAs nanobarrier at the QW boundaries does not induce structural defects. The diffusion of the InAlAs/InGaAs interface (2–3 monolayers) and InAs/InGaAs nanoinsert interface (1–2 monolayers) has been estimated. Measured Hall mobilities and electron concentrations in structures with different combinations of InAs and GaAs inserts have been analyzed using calculated energy band diagrams and electron density distributions. It is found that the photoluminescence spectra of the structures under study have differences caused by specific structural features of coupled QWs (specifically, the change in the In molar fraction due to InAs inserts and the change in the QW thickness due to GaAs transition barriers.

  9. Non-destructive mapping of doping and structural composition of MOVPE-grown high current density resonant tunnelling diodes through photoluminescence spectroscopy

    NASA Astrophysics Data System (ADS)

    Jacobs, K. J. P.; Stevens, B. J.; Mukai, T.; Ohnishi, D.; Hogg, R. A.

    2015-05-01

    We report on photoluminescence (PL) characterisation of metal-organic vapour phase epitaxy (MOVPE) grown high current density (~700 kA/cm2) InGaAs/AlAs/InP based resonant tunnelling diodes (RTDs) for terahertz emission. The PL mapping we describe allows important information about doping level and uniformity, ternary alloy composition and uniformity, and uniformity of quantum well thickness to be deduced. PL as a function of doping concentration is studied for InGaAs test layers at low temperatures and correlated to secondary-ion mass spectroscopy (SIMS) and electrochemical capacitance-voltage (eCV) profiling to provide non-destructive mapping of doping over the wafer. For the RTD structures, we utilise eCV as a selective etch tool to identify the origin of low temperature PL emission from the quantum well (QW) and the highly doped contact layers. PL mapping of the RTD wafer at low temperatures is shown to allow the assessment of variations in InGaAs alloy composition and QW thickness. Details of the growth process are discussed and confirmed using high resolution X-ray diffraction (HRXRD) crystallography. The rapid non-destructive characterisation and wafer mapping of these structures promises a route to future growth optimisation of such structures.

  10. ECR etching of GaP, GaAs, InP, and InGaAs in Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}/N{sub 2}

    SciTech Connect

    Shul, R.J.; Baca, A.G.; Rieger, D.J.; Hou, H.; Pearton, S.J.; Ren, F.

    1996-06-01

    Electron cyclotron resonance (ECR) etching GaP, GaAs, InP, and InGaAs are reported as a function of percent chlorine-containing gas for Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}N{sub 2} plasma chemistries. GaAs and GaP etch rates were faster than InP and InGaAs, independent of plasma chemistry due to the low volatility of the InCl{sub x} etch products. GaAs and GaP etch rates increased as %Cl{sub 2} was increased for Cl{sub 2}/Ar and Cl{sub 2}/N{sub 2} plasmas. The GaAs and GaP etch rates were much slower in BCl{sub 3}-based plasmas due to lower concentrations of reactive Cl, however enhanced etch rates were observed in BCl{sub 3}/N{sub 2} at 75% BCl{sub 3}. Smooth etched surfaces were obtained over a wide range of plasma chemistries.

  11. Probing structure-induced optical behavior in a new class of self-activated luminescent 0D/1D CaWO₄ metal oxide – CdSe nanocrystal composite heterostructures

    DOE PAGES

    Han, Jinkyu; McBean, Coray; Wang, Lei; Hoy, Jessica; Jaye, Cherno; Liu, Haiqing; Li, Zhuo-Qun; Sfeir, Matthew Y.; Fischer, Daniel A.; Taylor, Gordon T.; et al

    2015-01-30

    In this report, we synthesize and characterize the structural and optical properties of novel heterostructures composed of (i) semiconducting nanocrystalline CdSe quantum dot (QDs) coupled with (ii) both one and zero-dimensional (1D and 0D) motifs of self-activated luminescence CaWO₄ metal oxides. Specifically, ~4 nm CdSe QDs have been anchored onto (i) high-aspect ratio 1D nanowires, measuring ~230 nm in diameter and ~3 μm in length, as well as onto (ii) crystalline 0D nanoparticles (possessing an average diameter of ~ 80 nm) of CaWO₄ through the mediation of 3-mercaptopropionic acid (MPA) as a connecting linker. Composite formation was confirmed by complementarymore » electron microscopy and spectroscopy (i.e. IR and Raman) data. In terms of luminescent properties, our results show that our 1D and 0D heterostructures evince photoluminescence (PL) quenching and shortened PL lifetimes of CaWO₄ as compared with unbound CaWO₄. We propose that a photo-induced electron transfer process occurs from CaWO₄ to CdSe QDs, a scenario which has been confirmed by NEXAFS measurements and which highlights a decrease in the number of unoccupied orbitals in the conduction bands of CdSe QDs. By contrast, the PL signature and lifetimes of MPA-capped CdSe QDs within these heterostructures do not exhibit noticeable changes as compared with unbound MPA-capped CdSe QDs. The striking difference in optical behavior between CaWO₄ nanostructures and CdSe QDs within our heterostructures can be correlated with the relative positions of their conduction and valence energy band levels. In addition, the PL quenching behaviors for CaWO₄ within the heterostructure configuration were examined by systematically varying (i) the quantities and coverage densities of CdSe QDs as well as (ii) the intrinsic morphology (and by extension, the inherent crystallite size) of CaWO₄ itself.« less

  12. The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

    NASA Astrophysics Data System (ADS)

    Wen, Guozhi; Zeng, Xiangbin; Li, Xianghu

    2016-08-01

    Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900°C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1 nm and 5.6 nm, the number densities are as high as 1.7 × 1012 cm-2 and 3.2 × 1012 cm-2, and the crystalline volume fractions are about 58.3% and 61.3% for the 900°C and 1050°C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices.

  13. Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.

    PubMed

    Shu, G W; Lin, J Y; Jian, H T; Shen, J L; Wang, S C; Chou, C L; Chou, W C; Wu, C H; Chiu, C H; Kuo, H C

    2013-01-14

    Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.

  14. InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L.

    2010-12-01

    We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial InxGa1-xAs (x˜0.20) inserts with thicknesses from 36 to 220 nm with ±10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

  15. Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

    SciTech Connect

    Shimomura, Kenichi; Ohshita, Yoshio; Kamiya, Itaru; Suzuki, Hidetoshi; Sasaki, Takuo; Takahasi, Masamitu

    2015-11-14

    Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by in situ X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping. The difference observed is attributed to In-Ga intermixing between the QDs and the cap layer under limited supply of In. Photoluminescence (PL) wavelength can be tuned by controlling the intermixing, which affects both the strain induced in the QDs and the barrier heights. The PL wavelength also varies with the cap layer thickness. A large redshift occurs by reducing the cap thickness. The in situ XRD observation reveals that this is a result of reduced strain. We demonstrate how such information about strain can be applied for designing and preparing novel device structures.

  16. Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures

    NASA Astrophysics Data System (ADS)

    Ihara, S.; Andreev, A.; Williams, D. A.; Kodera, T.; Oda, S.

    2015-07-01

    We report on fabrication and transport properties of lithographically defined single quantum dots (QDs) in single electron transistors with ultrathin silicon-on-insulator (SOI) substrate. We observed comparatively large charging energy E C ˜ 20 meV derived from the stability diagram at a temperature of 4.2 K. We also carried out three-dimensional calculations of the capacitance matrix and transport properties through the QD for the real structure geometry and found an excellent quantitative agreement with experiment of the calculated main parameters of stability diagram (charging energy, period of Coulomb oscillations, and asymmetry of the diamonds). The obtained results confirm fabrication of well-defined integrated QDs as designed with ultrathin SOI that makes it possible to achieve relatively large QD charging energies, which is useful for stable and high temperature operation of single electron devices.

  17. Full spin-coated multilayer structure hybrid light-emitting devices

    NASA Astrophysics Data System (ADS)

    Cheng, Gang; Mazzeo, Marco; Carallo, Sonia; Wang, Huiping; Ma, Yuguang; Gigli, Giuseppe

    2010-09-01

    We report on a multilayer structure hybrid light-emitting device (HLED) using a water/alcohol-soluble polymer poly(9,9-bis{30-[(N,N-dimethyl)-N-ethylammonium}-propyl]-2,7-fluorene dibromide) as an electron-transporting layer and a close-packed quantum dot-layer (QD-layer) as an emitting layer. The device was realized by full spin-coating technology without thermal evaporation process for the deposition of organic layers. The QD-layer was a mixture of QDs with two different sizes, in which large size QD-emitters were dispersed in small size QDs to weaken the concentration quenching. The device achieved a maximum power efficiency of 0.58 lm/W, which nearly quadrupled that of the HLED with a plain large size QD-EML.

  18. Magnetotransport and luminescence measurements in an n-type selectively doped InGaAs/GaAs strained quantum well structure

    SciTech Connect

    Fritz, I.J.; Schirber, J.E.; Jones, E.D.; Drummond, T.J.; Dawson, L.R.

    1987-05-11

    A selectively doped, n-type, single strained quantum well (SSQW) structure, consisting of an 8-nm-thick In/sub 0.25/Ga/sub 0.75/As layer sandwiched between thick GaAs layers, has been grown by molecular beam epitaxy. Low-field Hall-effect measurements from 4 to 300 K and field-dependent magnetotransport measurements at 4 K show that conduction through the doped GaAs layers competes with conduction from the two-dimensional electron gas confined by the InGaAs quantum well. Photoluminescence measurements at 4 K yield a band-gap energy of 1.30 eV and confirm the transport measurement of carrier density in the InGaAs conducting channel. Analysis of the parallel-conduction process yields channel carrier density and mobility which are consistent with data on strained-layer superlattices (SLS's) not exhibiting parallel conduction. Comparison of the SSQW and SLS results demonstrates that heavily doped SSQW structures require narrow doping spikes to avoid parasitic current paths.

  19. Resonance energy transfer in self-organized organic/inorganic dendrite structures.

    PubMed

    Melnikau, D; Savateeva, D; Lesnyak, V; Gaponik, N; Fernández, Y Núnez; Vasilevskiy, M I; Costa, M F; Mochalov, K E; Oleinikov, V; Rakovich, Y P

    2013-10-01

    Hybrid materials formed by semiconductor quantum dots and J-aggregates of cyanine dyes provide a unique combination of enhanced absorption in inorganic constituents with large oscillator strength and extremely narrow exciton bands of the organic component. The optical properties of dendrite structures with fractal dimension 1.7-1.8, formed from J-aggregates integrated with CdTe quantum dots (QDs), have been investigated by photoluminescence spectroscopy and fluorescence lifetime imaging microscopy. Our results demonstrate that (i) J-aggregates are coupled to QDs by Förster-type resonant energy transfer and (ii) there are energy fluxes from the periphery to the centre of the structure, where the QD density is higher than in the periphery of the dendrite. Such an anisotropic energy transport can be only observed when dendrites are formed from QDs integrated with J-aggregates. These QD/J-aggregate hybrid systems can have applications in light harvesting systems and optical sensors with extended absorption spectra. PMID:23949098

  20. Capability of coupled CdSe/TiO2 heterogeneous structure for photocatalytic degradation and photoconductivity

    PubMed Central

    2014-01-01

    Highly ordered TiO2 nanotube arrays (TiO2-NTAs), with a uniform tube size on titanium substrate, were obtained by means of reoxidation and annealing. A composite structure, CdSe quantum dots@TiO2 nanotube arrays (CdSe QDs@TiO2-NTAs), was fabricated by assembling CdSe quantum dots into TiO2-NTAs via cyclic voltammetry electrochemical deposition. The X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), and transmission electron microscope (TEM) were carried out for the determination of the composition and structure of the tubular layers. Optical properties were investigated by ultraviolet-visible spectrophotometer (UV-Vis). Photocurrent response under visible light illumination and photocatalytic activity of samples by degradation of methyl orange were measured. The results demonstrated that the photo absorption of the composite film shifted to the visible region, and the photocurrent intensity was greatly enhanced due to the assembly of CdSe QDs. Especially, photocurrent achieved a maximum of 1.853 μA/cm2 after five voltammetry cycles of all samples. After irradiation under ultra violet-visible light for 2 h, the degradation rate of composition to methyl orange (MO) reached 88.20%, demonstrating that the CdSe QDs@TiO2-NTAs exhibited higher photocatalytic activity. PMID:25489287

  1. Capability of coupled CdSe/TiO2 heterogeneous structure for photocatalytic degradation and photoconductivity.

    PubMed

    Zhang, Miao; Xu, Yanyan; Lv, Jianguo; Yang, Lei; Jiang, Xishun; He, Gang; Song, Xueping; Sun, Zhaoqi

    2014-01-01

    Highly ordered TiO2 nanotube arrays (TiO2-NTAs), with a uniform tube size on titanium substrate, were obtained by means of reoxidation and annealing. A composite structure, CdSe quantum dots@TiO2 nanotube arrays (CdSe QDs@TiO2-NTAs), was fabricated by assembling CdSe quantum dots into TiO2-NTAs via cyclic voltammetry electrochemical deposition. The X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), and transmission electron microscope (TEM) were carried out for the determination of the composition and structure of the tubular layers. Optical properties were investigated by ultraviolet-visible spectrophotometer (UV-Vis). Photocurrent response under visible light illumination and photocatalytic activity of samples by degradation of methyl orange were measured. The results demonstrated that the photo absorption of the composite film shifted to the visible region, and the photocurrent intensity was greatly enhanced due to the assembly of CdSe QDs. Especially, photocurrent achieved a maximum of 1.853 μA/cm(2) after five voltammetry cycles of all samples. After irradiation under ultra violet-visible light for 2 h, the degradation rate of composition to methyl orange (MO) reached 88.20%, demonstrating that the CdSe QDs@TiO2-NTAs exhibited higher photocatalytic activity.

  2. Resonance energy transfer in self-organized organic/inorganic dendrite structures

    NASA Astrophysics Data System (ADS)

    Melnikau, D.; Savateeva, D.; Lesnyak, V.; Gaponik, N.; Fernández, Y. Núnez; Vasilevskiy, M. I.; Costa, M. F.; Mochalov, K. E.; Oleinikov, V.; Rakovich, Y. P.

    2013-09-01

    Hybrid materials formed by semiconductor quantum dots and J-aggregates of cyanine dyes provide a unique combination of enhanced absorption in inorganic constituents with large oscillator strength and extremely narrow exciton bands of the organic component. The optical properties of dendrite structures with fractal dimension 1.7-1.8, formed from J-aggregates integrated with CdTe quantum dots (QDs), have been investigated by photoluminescence spectroscopy and fluorescence lifetime imaging microscopy. Our results demonstrate that (i) J-aggregates are coupled to QDs by Förster-type resonant energy transfer and (ii) there are energy fluxes from the periphery to the centre of the structure, where the QD density is higher than in the periphery of the dendrite. Such an anisotropic energy transport can be only observed when dendrites are formed from QDs integrated with J-aggregates. These QD/J-aggregate hybrid systems can have applications in light harvesting systems and optical sensors with extended absorption spectra.

  3. Enhanced photoelectrochemical strategy for ultrasensitive DNA detection based on two different sizes of CdTe quantum dots cosensitized TiO2/CdS:Mn hybrid structure.

    PubMed

    Fan, Gao-Chao; Han, Li; Zhang, Jian-Rong; Zhu, Jun-Jie

    2014-11-01

    A TiO2/CdS:Mn hybrid structure cosensitized with two different sizes of CdTe quantum dots (QDs) was designed to develop a novel and ultrasensitive photoelectrochemical DNA assay. In this protocol, TiO2/CdS:Mn hybrid structure was prepared by successive adsorption and reaction of Cd(2+)/Mn(2+) and S(2-) ions on the surface of TiO2 film and then was employed as matrix for immobilization of hairpin DNA probe, whereas large-sized CdTe-COOH QDs and small-sized CdTe-NH2 QDs as signal amplification elements were successively labeled on the terminal of hairpin DNA probe. The target DNA detection was based upon the photocurrent change originated from conformation change of the hairpin DNA probe after hybridization with target DNA. In the absence of target DNA, the immobilized DNA probe was in the hairpin form and the anchored different sizes of CdTe-COOH and CdTe-NH2 QDs were close to the TiO2/CdS:Mn electrode surface, which led to a very strong photocurrent intensity because of the formation of the cosensitized structure. However, in the presence of target DNA, the hairpin DNA probe hybridized with target DNA and changed into a more rigid, rodlike double helix, which forced the multianchored CdTe QDs away from the TiO2/CdS:Mn electrode surface, resulting in significantly decreased photocurrent intensity because of the vanished cosensitization effect. By using this cosensitization signal amplification strategy, the proposed DNA assay could offer an ultrasensitive and specific detection of DNA down to 27 aM, and it opened up a new promising platform to detect various DNA targets at ultralow levels for early diagnoses of different diseases. PMID:25294102

  4. Tandem structured quantum dot/rod sensitized solar cell based on solvothermal synthesized CdSe quantum dots and rods

    NASA Astrophysics Data System (ADS)

    Golobostanfard, Mohammad Reza; Abdizadeh, Hossein

    2014-06-01

    The quantum dots (QD) and quantum rods (QR) of different sizes, shapes, and crystalline phases are synthesized by modified solvothermal method spontaneously employed stirring system and controlled internal applied pressure. The tandem structure of QDs and QRs as well as tetrapods is formed on hierarchical porous titania photoanode by means of electrophoretic deposition. A tremendous enhancement in efficiency of the cell is obtained in samples synthesized at 220 °C for 24 h due to the formation of tandem structure, utilization of Cu2S/CNT composite cathode, co-sensitization of CdS and CdSe, and beneficial role of QRs in electron lifetime. Smaller size QDs with higher band gaps penetrate deeper through the macro-channels of the hierarchical porous structure, while the QRs and tetrapods with lower band gaps are placed on upper layers. Although the charge injection is improved in smaller QDs, the electron lifetime in QRs is longer mainly due to the higher absorption cross section, proper charge separation, introduction of quasi-one dimensional route for charge transport through QRs, and higher surface area available for regeneration with electrolyte. The cell shows the efficiency of 1.05% with JSC of 4.48 mA cm-2, VOC of 0.45 V, and fill factor of 0.52.

  5. Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures

    NASA Astrophysics Data System (ADS)

    Couto, O. D. D.; de Almeida, P. T.; dos Santos, G. E.; Balanta, M. A. G.; Andriolo, H. F.; Brum, J. A.; Brasil, M. J. S. P.; Iikawa, F.; Liang, B. L.; Huffaker, D. L.

    2016-08-01

    We investigate optical transitions and carrier dynamics in hybrid structures containing type-I GaAs/AlGaAs quantum wells (QWs) and type-II GaSb/AlGaAs quantum dots (QDs). We show that the optical recombination of photocreated electrons confined in the QWs with holes in the QDs and wetting layer can be modified according to the QW/QD spatial separation. In particular, for low spacer thicknesses, the QW optical emission can be suppressed due to the transference of holes from the QW to the GaSb layer, favoring the optical recombination of spatially separated carriers, which can be useful for optical memory and solar cell applications. Time-resolved photoluminescence (PL) measurements reveal non-exponential recombination dynamics. We demonstrate that the PL transients can only be quantitatively described by considering both linear and quadratic terms of the carrier density in the bimolecular recombination approximation for type-II semiconductor nanostructures. We extract long exciton lifetimes from 700 ns to 5 μs for QDs depending on the spacer layer thickness.

  6. Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides

    PubMed Central

    2011-01-01

    The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL) signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices. PMID:21711749

  7. Experimental methods of post-growth tuning of the excitonic fine structure splitting in semiconductor quantum dots

    PubMed Central

    2012-01-01

    Deterministic sources of polarization entangled photon pairs on demand are considered as important building blocks for quantum communication technology. It has been demonstrated that semiconductor quantum dots (QDs), which exhibit a sufficiently small excitonic fine structure splitting (FSS) can be used as triggered, on-chip sources of polarization entangled photon pairs. As-grown QDs usually do not have the required values of the FSS, making the availability of post-growth tuning techniques highly desired. This article reviews the effect of different post-growth treatments and external fields on the FSS such as thermal annealing, magnetic fields, the optical Stark effect, electric fields, and anisotropic stress. As a consequence of the tuning of the FSS, for some tuning techniques a rotation of the polarization of the emitted light is observed. The joint modification of polarization orientation and FSS can be described by an anticrossing of the bright excitonic states. PMID:22726724

  8. Low temperature Zn diffusion for GaSb solar cell structures fabrication

    NASA Technical Reports Server (NTRS)

    Sulima, Oleg V.; Faleev, Nikolai N.; Kazantsev, Andrej B.; Mintairov, Alexander M.; Namazov, Ali

    1995-01-01

    Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

  9. Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case

    PubMed

    Sanguinetti; Chiantoni; Miotto; Grilli; Guzzi; Henini; Polimeni; Patane; Eaves; Main

    2000-06-01

    We have investigated the In(Ga)As island formation, in the Stranski-Krastanov growth mode, on (311)A GaAs substrates. The surface topography of InAs and InGaAs strained epilayers was studied by contact microscopies. The different substrate affects the overgrown island shape. In(Ga)As grown on (311)A gives rise to quantum wire-like islands. Quantum dots (QDs), but with highly anisotropic shapes, are the outcomes of InAs deposition. QD samples were also characterized by photoluminescence (PL) measurements. Correlation between optical and morphological properties was observed.

  10. Reaction mechanism of a PbS-on-ZnO heterostructure and enhanced photovoltaic diode performance with an interface-modulated heterojunction energy band structure.

    PubMed

    Li, Haili; Jiao, Shujie; Ren, Jinxian; Li, Hongtao; Gao, Shiyong; Wang, Jinzhong; Wang, Dongbo; Yu, Qingjiang; Zhang, Yong; Li, Lin

    2016-02-01

    A room temperature successive ionic layer adsorption and reaction (SILAR) method is introduced for fabricating quantum dots-on-wide bandgap semiconductors. Detailed exploration of how SILAR begins and proceeds is performed by analyzing changes in the electronic structure of related elements at interfaces by X-ray photoelectric spectroscopy, together with characterization of optical properties and X-ray diffraction. The distribution of PbS QDs on ZnO, which is critical for optoelectrical applications of PbS with a large dielectric constant, shows a close relationship with the dipping order. A successively deposited PbS QDs layer is obtained when the sample is first immersed in Na2S solution. This is reasonable because the initial formation of different chemical bonds on ZnO nanorods is closely related to dangling bonds and defect states on surfaces. Most importantly, dipping order also affects their optoelectrical characteristics greatly, which can be explained by the heterojunction energy band structure related to the interface. The formation mechanism for PbS QDs on ZnO is confirmed by the fact that the photovoltaic diode device performance is closely related to the dipping order. Our atomic-scale understanding emphasises the fundamental role of surface chemistry in the structure and tuning of optoelectrical properties, and consequently in devices.

  11. Optical Spectroscopy of Nano Materials and Structures

    NASA Astrophysics Data System (ADS)

    Guo, Wenhao

    broadening which is caused by the bandgap change. The experimental results confirm our speculation. When we make the nanowire straight again, the redshift disappears. It is believed that this piezoelectric effect is very important to the application of nanowires, and it would benefit the actual design and fabrication for the electronic devices for the next generation. Lastly, as for the OD case, the charge transfer mechanism occurring at the interface between graphene and ZnO QDs is investigated. We fabricate a hybrid structure by placing ZnO QDs on top of graphene. With UV light illumination on this device, it will generate electron-hole pairs inside QDs. Before they recombine, the holes will be separated and trapped into the surface states, and discharge the oxygen ions adsorbed on the surface of QDs. The unpaired electrons are then transferred to the graphene layer with a relative long lifetime. After the UV light is switched off, the oxygen molecules will re-adsorb to the QDs surface, capture electrons and recover the graphene's transport properties. Therefore, this hybrid device shows an ultrasensitive response to on-off of the UV laser, with a photoconductive gain as high as 10 7, which can be utilized for practical graphene-based UV sensors and detectors with very high responsivity. This gain can be further enhanced by another 2-3 orders by increasing source-drain voltage, shortening the sample's length, etc. It is believed that optical spectroscopy provides a convenient, efficient and useful method to study the nanomaterials and nanostructures. It is easy to set up, has no harm or degradation to the sample, and could go beyond the diffraction limit. With appropriate design and creative ideas, optical spectroscopy can be further explored, and will boost the development of nanoscience and technology. (Abstract shortened by UMI.).

  12. Quantum structures for multiband photon detection

    NASA Astrophysics Data System (ADS)

    Perera, A. G. U.

    2005-09-01

    The work describes multiband photon detectors based on semiconductor micro- and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and internal photoemission play the dominant role in homo or heterojunction detectors. Quantum Dots-in-a-Well (DWELL) detectors can tailor the response wavelength by varying the size of the well. A tunneling Quantum Dot Infrared Photodetector (T-QDIP) could operate at room temperature by blocking the dark current except in the case of resonance. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunneling, while the dark current is blocked by AlGaAs/InGaAs tunneling barriers placed in the structure. A two-color infrared detector with photoresponse peaks at ~6 and ~17 μm at room temperature will be discussed. A Homojunction or HEterojunction Interfacial Workfunction Internal Photoemission (HIWIP or HEIWIP) infrared detector, formed by a doped emitter layer, and an intrinsic layer acting as the barrier followed by another highly doped contact layer, can detect near infrared (NIR) photons due to interband transitions and mid/far infrared (MIR/FIR) radiation due to intraband transitions. The threshold wavelength of the interband response depends on the band gap of the barrier material, and the MIR/FIR response due to intraband transitions can be tailored by adjusting the band offset between the emitter and the barrier. GaAs/AlGaAs will provide NIR and MIR/FIR dual band response, and with GaN/AlGaN structures the detection capability can be extended into the ultraviolet region. These detectors are useful in numerous applications such as environmental monitoring, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing.

  13. Electronic band structure and optical gain of GaNxBiyAs1-x-y/GaAs pyramidal quantum dots

    NASA Astrophysics Data System (ADS)

    Song, Zhi-Gang; Bose, Sumanta; Fan, Wei-Jun; Li, Shu-Shen

    2016-04-01

    The electronic band structure and optical gain of GaNxBiyAs1-x-y/GaAs pyramidal quantum dots (QDs) are investigated using the 16-band k ṡ p model with constant strain. The optical gain is calculated taking both homogeneous and inhomogeneous broadenings into consideration. The effective band gap falls as we increase the composition of nitrogen (N) and bismuth (Bi) and with an appropriate choice of composition we can tune the emission wavelength to span within 1.3 μm-1.55 μm, for device application in fiber technology. The extent of this red shift is more profound in QDs compared with bulk material due to quantum confinement. Other factors affecting the emission characteristics include virtual crystal, strain profile, band anticrossing (BAC), and valence band anticrossing (VBAC). The strain profile has a profound impact on the electronic structure, specially the valence band of QDs, which can be determined using the composition distribution of wave functions. All these factors eventually affect the optical gain spectrum. With an increase in QD size, we observe a red shift in the emission energy and emergence of secondary peaks owing to transitions or greater energy compared with the fundamental transition.

  14. Materials, structures, and devices for high-speed electronics

    NASA Astrophysics Data System (ADS)

    Woollam, John A.; Snyder, Paul G.

    1992-12-01

    Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

  15. Materials, structures, and devices for high-speed electronics

    NASA Technical Reports Server (NTRS)

    Woollam, John A.; Snyder, Paul G.

    1992-01-01

    Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

  16. Influence of As{sub 4} flux on the growth kinetics, structure, and optical properties of InAs/GaAs quantum dots

    SciTech Connect

    Garcia, A.; Mateo, C. M.; Defensor, M.; Salvador, A.; Hui, H. K.; Boothroyd, C. B.; Philpott, E.

    2007-10-01

    We report the effects of variations in As{sub 4} growth flux on the evolution of molecular beam epitaxy grown InAs quantum dots (QDs) and their structures and optical properties. For InAs QDs grown under As-stable conditions, evaluated through photoluminescence and atomic force microscopy (AFM) measurements, it is evident that QD size increases with As{sub 4} pressure along with improvement in size uniformity. Furthermore, transmission electron microscopy measurements for InAs layers of critical thicknesses ({approx}1.7 ML) showed decreasing QD density with increasing As{sub 4} pressure accompanied by a strong reduction in photoluminescence (PL) integral intensity. These show that high As{sub 4} fluxes suppress InAs QD formation while the decreasing PL intensity seems to indicate cluster formation that features nonradiative recombination. AFM measurements show larger and denser QDs for samples grown at higher As{sub 4} pressures. These are explained on the basis of adatom condensation during surface cooling and the influence of As{sub 4} pressure on indium incorporation.

  17. Efficient excitation of photoluminescence in a two-dimensional waveguide consisting of a quantum dot-polymer sandwich-type structure.

    PubMed

    Suárez, I; Larrue, A; Rodríguez-Cantó, P J; Almuneau, G; Abargues, R; Chirvony, V S; Martínez-Pastor, J P

    2014-08-15

    In this Letter, we study a new kind of organic polymer waveguide numerically and experimentally by combining an ultrathin (10-50 nm) layer of compactly packed CdSe/ZnS core/shell colloidal quantum dots (QDs) sandwiched between two cladding poly(methyl methacrylate) (PMMA) layers. When a pumping laser beam is coupled into the waveguide edge, light is mostly confined around the QD layer, improving the efficiency of excitation. Moreover, the absence of losses in the claddings allows the propagation of the pumping laser beam along the entire waveguide length; hence, a high-intensity photoluminescence (PL) is produced. Furthermore, a novel fabrication technology is developed to pattern the PMMA into ridge structures by UV lithography in order to provide additional light confinement. The sandwich-type waveguide is analyzed in comparison to a similar one formed by a PMMA film homogeneously doped by the same QDs. A 100-fold enhancement in the waveguided PL is found for the sandwich-type case due to the higher concentration of QDs inside the waveguide.

  18. Investigation of pure and Co2+-doped ZnO quantum dot electronic structures using the density functional theory: choosing the right functional

    NASA Astrophysics Data System (ADS)

    Badaeva, Ekaterina; Feng, Yong; Gamelin, Daniel R.; Li, Xiaosong

    2008-05-01

    The electronic structures of pure and Co2+-doped ZnO quantum dots (QDs) with sizes up to 300 atoms were investigated using three different density functional theory approximations: local spin density approximation (LSDA), gradient-corrected Perdew-Burke-Ernzerhof (PBE) and the hybrid PBE1 functionals with LANL2DZ pseudo-potential and associated basis set. Qualitative agreement among the three methods is found for the pure ZnO nanostructures, but only the hybrid functional reproduces the correct bandgap energies quantitatively. For Co2+-doped ZnO QDs, both LSDA and PBE incorrectly model interactions between Co2+ d levels and the valence band of ZnO, which will strongly impair predictions of dopant-carrier magnetic exchange interactions based on such computational results. Experimental observations are reproduced well in calculations at the hybrid PBE1 level of theory, making this the method of choice for exploring the magnetism of transition metal ions in ZnO QDs computationally. The qualitative features of the Co2+ 3d levels do not change appreciably with changes in cluster size over the range examined, leading to size-dependent dopant-band edge energy differences. The results presented here thus provide an experimentally calibrated framework for future ab initio descriptions of dopant-carrier and dopant-dopant magnetic exchange interactions in diluted magnetic semiconductors (DMS) nanocrystals.

  19. Photoluminescence and structural properties of CdSe quantum dot-gelatin composite films

    NASA Astrophysics Data System (ADS)

    Borkovska, L.; Korsunska, N.; Stara, T.; Gudymenko, O.; Kladko, V.; Stroyuk, O.; Raevskaya, A.; Kryshtab, T.

    2014-11-01

    Optical and structural properties of composite films of CdSe quantum dots (QDs) embedded in gelatin matrix have been investigated by photoluminescence (PL), optical absorption and X-ray diffraction (XRD) methods. The optical absorption of the composite in the visible spectral range is found to be determined mainly by light absorption in the QDs. The decrease of the film transparency and the shift of the absorption edge to lower energies observed upon thermal annealing of the films at 140-160 °C are ascribed to the formation of chromophore groups in gelatin matrix. XRD patterns of the composite revealed helix to coil transition in gelatin matrix under thermal annealing of the composite at 100-160 °C. It is found that PL spectra of the composite are dominated by exciton and defect-related emission of the QDs and also contain weak emission of gelatin matrix. It is found that thermal annealing of the composite at 100-160 °C changes PL intensity and produces the shift of the PL bands to lower energies. As the annealed composite was kept in air for several months, the shift of exciton-related PL band position restored partially and the PL intensity increased. It is proposed that the increase of the PL intensity upon the thermal annealing of composite at 140 °C can be used for enhancement of the QD-related PL. Changes that occurred in the PL spectra of composite are ascribed to structural and chemical transformations in gelatin matrix and at the QD/gelatin interface.

  20. Growth and Strain Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell Structures

    NASA Astrophysics Data System (ADS)

    Alhomoudi, Ibrahim A.

    2016-06-01

    Metalorganic chemical vapor deposition (MOCVD) has been used for development of photovoltaic (PV) structures that enable enhanced efficiency for triple-junction solar cell (TJSC) devices. The in-plane strain, lattice match, surface defects, surface morphology, compositional uniformity, threading dislocations (TDs), and depth profile of each layer of the TJSC structure have been examined. The heteroepitaxial layers were found to be near lattice matched to the substrate with excellent coherence between the layers. The analysis explained that the indium gallium phosphide (InGaP) and indium gallium arsenide (InGaAs) layers on germanium (Ge) substrate are a strained structure with purely tetragonal crystalline phase, which indicates that the TJSC structural layers could maintain high crystalline quality. The biaxial in-plane strain in each layer of the TJSC structure is compressive and varies in magnitude for each layer in the structure, being strongly influenced by the Ge substrate and the multiple epilayers of the PV structure. Transmission electron microscopy (TEM) results show no TDs observed over a region with area of 500 nm2, with surface defect density less than 1 × 108 cm-2. No evidence of stacking faults and no visible defects of antiphase domains (APDs) at interfaces were observed, indicating adequate nucleation of epitaxial layers on the substrate and on subsequent growth layers. Furthermore, secondary-ion mass spectrometry (SIMS) analysis showed no significant Ge diffusion from the substrate into the TJSC structure.

  1. Growth and Strain Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell Structures

    NASA Astrophysics Data System (ADS)

    Alhomoudi, Ibrahim A.

    2016-10-01

    Metalorganic chemical vapor deposition (MOCVD) has been used for development of photovoltaic (PV) structures that enable enhanced efficiency for triple-junction solar cell (TJSC) devices. The in-plane strain, lattice match, surface defects, surface morphology, compositional uniformity, threading dislocations (TDs), and depth profile of each layer of the TJSC structure have been examined. The heteroepitaxial layers were found to be near lattice matched to the substrate with excellent coherence between the layers. The analysis explained that the indium gallium phosphide (InGaP) and indium gallium arsenide (InGaAs) layers on germanium (Ge) substrate are a strained structure with purely tetragonal crystalline phase, which indicates that the TJSC structural layers could maintain high crystalline quality. The biaxial in-plane strain in each layer of the TJSC structure is compressive and varies in magnitude for each layer in the structure, being strongly influenced by the Ge substrate and the multiple epilayers of the PV structure. Transmission electron microscopy (TEM) results show no TDs observed over a region with area of 500 nm2, with surface defect density less than 1 × 108 cm-2. No evidence of stacking faults and no visible defects of antiphase domains (APDs) at interfaces were observed, indicating adequate nucleation of epitaxial layers on the substrate and on subsequent growth layers. Furthermore, secondary-ion mass spectrometry (SIMS) analysis showed no significant Ge diffusion from the substrate into the TJSC structure.

  2. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    SciTech Connect

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M.; Chen, D. D.; Xu, F.

    2014-07-14

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488 nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325 nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  3. Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

    SciTech Connect

    Dion, C.; Desjardins, P.; Schiettekatte, F.; Chicoine, M.; Robertson, M. D.; Shtinkov, N.; Poole, P. J.; Wu, X.; Raymond, S.

    2008-08-15

    We have investigated the influence of defects emanating from phosphorus implantation damage in the InP capping layer on postgrowth thermally induced intermixing in self-assembled InAs/InP(001) quantum dots (QDs). Photoluminescence (PL) spectra from as-grown samples could be described as the superposition of separate PL peaks where each peak corresponded to emission from an ensemble of QDs with a particular height ranging from 4 to 13 ML. Blueshift of up to 270 meV and significant bandwidth broadening were observed in the PL spectra after ion implantation with a fluence of 5x10{sup 11}-10{sup 14} cm{sup -2} and subsequent annealing at temperatures ranging from 450 to 600 deg. C. From the analysis of the evolution of the QD peaks upon intermixing, which revealed the coexistence of intact QD PL and a broad PL feature related to heavily intermixed QDs, it was suggested that the bandwidth broadening resulted from spatial inhomogeneity in the compositional intermixing. In order to better understand the mechanism responsible for the ion-implantation-induced intermixing, samples capped with a stack of compressively strained In{sub 0.75}Ga{sub 0.25}As/InP quantum wells (QWs) were prepared to trap vacancies released by the implantation damage while not inhibiting the effect of the interstitials. Both blueshift and bandwidth broadening were suppressed in samples containing the strained InGaAs QWs, whereas the evolution of the PL spectra from the QDs behaves as expected for interstitial-mediated intermixing. The vacancies were thus believed to be trapped in the QWs and indicated that intermixing in ion-implanted InP capped samples is mediated by vacancies. The shape of the QDs changed from a truncated pyramid in the as-grown state to a double convex lens structure after intermixing as confirmed by cross-sectional scanning transmission electron microscopy imaging. Furthermore, the change in shape and compositional intermixing of the QDs were attributed to vacancy trapping in

  4. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

    SciTech Connect

    Xu, Ming Jaffré, Alexandre Alvarez, José Kleider, Jean-Paul Boutchich, Mohamed; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Kanjanachuchai, Songphol

    2015-02-27

    We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

  5. Structural and orientation effects on electronic energy transfer between silicon quantum dots with dopants and with silver adsorbates

    SciTech Connect

    Vinson, N.; Freitag, H.; Micha, D. A.

    2014-06-28

    Starting from the atomic structure of silicon quantum dots (QDs), and utilizing ab initio electronic structure calculations within the Förster resonance energy transfer (FRET) treatment, a model has been developed to characterize electronic excitation energy transfer between QDs. Electronic energy transfer rates, K{sub EET}, between selected identical pairs of crystalline silicon quantum dots systems, either bare, doped with Al or P, or adsorbed with Ag and Ag{sub 3}, have been calculated and analyzed to extend previous work on light absorption by QDs. The effects of their size and relative orientation on energy transfer rates for each system have also been considered. Using time-dependent density functional theory and the hybrid functional HSE06, the FRET treatment was employed to model electronic energy transfer rates within the dipole-dipole interaction approximation. Calculations with adsorbed Ag show that: (a) addition of Ag increases rates up to 100 times, (b) addition of Ag{sub 3} increases rates up to 1000 times, (c) collinear alignment of permanent dipoles increases transfer rates by an order of magnitude compared to parallel orientation, and (d) smaller QD-size increases transfer due to greater electronic orbitals overlap. Calculations with dopants show that: (a) p-type and n-type dopants enhance energy transfer up to two orders of magnitude, (b) surface-doping with P and center-doping with Al show the greatest rates, and (c) K{sub EET} is largest for collinear permanent dipoles when the dopant is on the outer surface and for parallel permanent dipoles when the dopant is inside the QD.

  6. Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 µm cw and pulse excitation

    NASA Astrophysics Data System (ADS)

    Murakumo, Keisuke; Yamaoka, Yuya; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro

    2016-04-01

    We fabricated a photoconductive antenna structure utilizing Er-doped InAs quantum dot layers embedded in strain-relaxed In0.35Ga0.65As layers on a GaAs substrate. Mesa-shaped electrodes for the antenna structure were formed by photolithography and wet etching in order to suppress its dark current. We measured the photocurrent with the excitation of ∼1.5 µm cw and femtosecond pulse lasers. Compared with the dark current, the photocurrent was clearly observed under both cw and pulse excitation conditions and almost linearly increased with increasing excitation power in a wide range of magnitudes from 10 W/cm2 to 10 MW/cm2 order.

  7. Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures.

    PubMed

    Fillipov, Stanislav; Puttisong, Yuttapoom; Huang, Yuqing; Buyanova, Irina A; Suraprapapich, Suwaree; Tu, Charles W; Chen, Weimin M

    2015-06-23

    Fine-structure splitting (FSS) of excitons in semiconductor nanostructures is a key parameter that has significant implications in photon entanglement and polarization conversion between electron spins and photons, relevant to quantum information technology and spintronics. Here, we investigate exciton FSS in self-organized lateral InAs/GaAs quantum-dot molecular structures (QMSs) including laterally aligned double quantum dots (DQDs), quantum-dot clusters (QCs), and quantum rings (QRs), by employing polarization-resolved microphotoluminescence (μPL) spectroscopy. We find a clear trend in FSS between the studied QMSs depending on their geometric arrangements, from a large FSS in the DQDs to a smaller FSS in the QCs and QRs. This trend is accompanied by a corresponding difference in the optical polarization directions of the excitons between these QMSs, namely, the bright-exciton lines are linearly polarized preferably along or perpendicular to the [11̅0] crystallographic axis in the DQDs that also defines the alignment direction of the two constituting QDs, whereas in the QCs and QRs, the polarization directions are randomly oriented. We attribute the observed trend in the FSS to a significant reduction of the asymmetry in the lateral confinement potential of the excitons in the QRs and QCs as compared with the DQDs, as a result of a compensation between the effects of lateral shape anisotropy and piezoelectric field. Our work demonstrates that FSS strongly depends on the geometric arrangements of the QMSs, which effectively tune the degree of the compensation effects and are capable of reducing FSS even in a strained QD system to a limit similar to strain-free QDs. This approach provides a pathway in obtaining high-symmetry quantum emitters desirable for realizing photon entanglement and spintronic devices based on such nanostructures, utilizing an uninterrupted epitaxial growth procedure without special requirements for lattice-matched materials combinations

  8. Bandgap and Structure Engineering via Cation Exchange: From Binary Ag2S to Ternary AgInS2, Quaternary AgZnInS alloy and AgZnInS/ZnS Core/Shell Fluorescent Nanocrystals for Bioimaging.

    PubMed

    Song, Jiangluqi; Ma, Chao; Zhang, Wenzhe; Li, Xiaodong; Zhang, Wenting; Wu, Rongbo; Cheng, Xiangcan; Ali, Asad; Yang, Mingya; Zhu, Lixin; Xia, Ruixiang; Xu, Xiaoliang

    2016-09-21

    Attention on semiconductor nanocrystals have been largely focused because of their unique optical and electrical properties, which can be applied as light absorber and luminophore. However, the band gap and structure engineering of nanomaterials is not so easy because of their finite size. Here we demonstrate an approach for preparing ternary AgInS2 (AIS), quaternary AgZnInS (AZIS), AgInS2/ZnS and AgZnInS/ZnS nanocompounds based on cation exchange. First, pristine Ag2S quantum dots (QDs) with different sizes were synthesized in one-pot, followed by the partial cation exchange between In(3+) and Ag(+). Changing the initial ratio of In(3+) to Ag(+), reaction time and temperature can control the components of the obtained AIS QDs. Under the optimized conditions, AIS QDs were obtained for the first time with a cation disordered cubic phase and high photoluminescence (PL) quantum yield (QY) up to 32% in aqueous solution, demonstrating the great potential of cation exchange in the synthesis for nanocrystals with excellent optical properties. Sequentially, Zn(2+) ions were incorporated in situ through a second exchange of Zn(2+) to Ag(+)/In(3+), leading to distinct results under different reaction temperature. Addition of Zn(2+) precursor at room temperature produced AIS/ZnS core/shell NCs with successively enhancement of QY, while subsequent heating could obtain AZIS homogeneous alloy QDs with a successively blue-shift of PL emission. This allow us to tune the PL emission of the products from 483 to 675 nm and fabricate the chemically stable QDs core/ZnS shell structure. Based on the above results, a mechanism about the cation exchange for the ternary nanocrystals of different structures was proposed that the balance between cation exchange and diffusion is the key factor of controlling the band gap and structure of the final products. Furthermore, photostability and in vitro experiment demonstrated quite low cytotoxicity and remarkably promising applications in the

  9. Bandgap and Structure Engineering via Cation Exchange: From Binary Ag2S to Ternary AgInS2, Quaternary AgZnInS alloy and AgZnInS/ZnS Core/Shell Fluorescent Nanocrystals for Bioimaging.

    PubMed

    Song, Jiangluqi; Ma, Chao; Zhang, Wenzhe; Li, Xiaodong; Zhang, Wenting; Wu, Rongbo; Cheng, Xiangcan; Ali, Asad; Yang, Mingya; Zhu, Lixin; Xia, Ruixiang; Xu, Xiaoliang

    2016-09-21

    Attention on semiconductor nanocrystals have been largely focused because of their unique optical and electrical properties, which can be applied as light absorber and luminophore. However, the band gap and structure engineering of nanomaterials is not so easy because of their finite size. Here we demonstrate an approach for preparing ternary AgInS2 (AIS), quaternary AgZnInS (AZIS), AgInS2/ZnS and AgZnInS/ZnS nanocompounds based on cation exchange. First, pristine Ag2S quantum dots (QDs) with different sizes were synthesized in one-pot, followed by the partial cation exchange between In(3+) and Ag(+). Changing the initial ratio of In(3+) to Ag(+), reaction time and temperature can control the components of the obtained AIS QDs. Under the optimized conditions, AIS QDs were obtained for the first time with a cation disordered cubic phase and high photoluminescence (PL) quantum yield (QY) up to 32% in aqueous solution, demonstrating the great potential of cation exchange in the synthesis for nanocrystals with excellent optical properties. Sequentially, Zn(2+) ions were incorporated in situ through a second exchange of Zn(2+) to Ag(+)/In(3+), leading to distinct results under different reaction temperature. Addition of Zn(2+) precursor at room temperature produced AIS/ZnS core/shell NCs with successively enhancement of QY, while subsequent heating could obtain AZIS homogeneous alloy QDs with a successively blue-shift of PL emission. This allow us to tune the PL emission of the products from 483 to 675 nm and fabricate the chemically stable QDs core/ZnS shell structure. Based on the above results, a mechanism about the cation exchange for the ternary nanocrystals of different structures was proposed that the balance between cation exchange and diffusion is the key factor of controlling the band gap and structure of the final products. Furthermore, photostability and in vitro experiment demonstrated quite low cytotoxicity and remarkably promising applications in the

  10. Viability of imaging structures inside human dentin using dental transillumination

    NASA Astrophysics Data System (ADS)

    Grandisoli, C. L.; Alves-de-Souza, F. D.; Costa, M. M.; Castro, L.; Ana, P. A.; Zezell, D. M.; Lins, E. C.

    2014-02-01

    Dental Transillumination (DT) is a technique for imaging internal structures of teeth by detecting infrared radiation transmitted throughout the specimens. It was successfully used to detect caries even considering dental enamel and dentin scatter infrared radiation strongly. Literature reports enamel's scattering coefficient is 10 to 30 times lower than dentin; this explain why DT is useful for imaging pathologies in dental enamel, but does not disable its using for imaging dental structures or pathologies inside the dentin. There was no conclusive data in the literature about the limitations of using DT to access biomedical information of dentin. The goal in this study was to present an application of DT to imaging internal structures of dentin. Slices of tooth were confectioned varying the thickness of groups from 0.5 mm up to 2,5 mm. For imaging a FPA InGaAs camera Xeva 1.7- 320 (900-1700 nm; Xenics, Inc., Belgium) and a 3W lamp-based broadband light source (Ocean Optics, Inc., USA) was used; bandpass optical filters at 1000+/-10 nm, 1100+/-10 nm, 1200+/-10 nm and 1300+/-50 nm spectral region were also applied to spectral selection. Images were captured for different camera exposure times and finally a computational processing was applied. The best results revealed the viability to imaging dent in tissue with thickness up to 2,5 mm without a filter (900-1700nm spectral range). After these results a pilot experiment of using DT to detect the pulp chamber of an incisive human tooth was made. New data showed the viability to imaging the pulp chamber of specimen.

  11. Simulation of dark current suppression in p-i-n InGaAs photodetector with In0.66Ga0.34As/InAs superlattice electron barrier

    NASA Astrophysics Data System (ADS)

    Lv, Jiabing; Chen, Jun

    2016-07-01

    An InGaAs-based photodetector with different periods of inserting strain-compensated In0.66Ga0.34As/InAs superlattice (SL) electron barrier in the In0.83Ga0.17As absorption layer has been investigated. The band diagram, electron concentration and electric field intensity of the structure were analyzed with numerical simulation. It was found that the period of SL has a remarkable influence on the properties of the photodetectors. With the decrease of the period of In0.66Ga0.34As/InAs SL, the dark current density is suppressed significantly, which is reduced to 2.46 × 10-3 A/cm2 at 300 K and a reverse bias voltage of 1 V when the period is 2.5 nm.

  12. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

    SciTech Connect

    Ulloa, J. M. Utrilla, A. D.; Guzman, A.; Hierro, A.

    2014-10-07

    Changing the growth rate during the heteroepitaxial capping of InAs/GaAs quantum dots (QDs) with a 5 nm-thick GaAsSbN capping layer (CL) strongly modifies the QD structural and optical properties. A size and shape transition from taller pyramids to flatter lens-shaped QDs is observed when the CL growth rate is decreased from 1.5 to 0.5 ML/s. This indicates that the QD dissolution processes taking place during capping can be controlled to some extent by the GaAsSbN CL growth rate, with high growth rates allowing a complete preservation of the QDs. However, the dissolution processes are shown to have a leveling effect on the QD height, giving rise to a narrower size distribution for lower growth rates. Contrary to what could be expected, these effects are opposite to the strong blue-shift and improvement of the photoluminescence (PL) observed for higher growth rates. Nevertheless, the PL results can be understood in terms of the strong impact of the growth rate on the Sb and N incorporation into the CL, which results in lower Sb and N contents at higher growth rates. Besides the QD-CL band offsets and QD strain, the different CL composition alters the band alignment of the system, which can be transformed to type-II at low growth rates. These results show the key role of the alloyed CL growth parameters on the resulting QD properties and demonstrate an intricate correlation between the PL spectra and the sample morphology in complex QD-CL structures.

  13. Bias activated dielectric response of excitons and excitonic Mott transition in quantum confined lasers structures.

    NASA Astrophysics Data System (ADS)

    Bhunia, Amit; Bansal, Kanika; Datta, Shouvik; Alshammari, Marzook S.; Henini, Mohamed

    In contrast to the widely reported optical techniques, there are hardly any investigations on corresponding electrical signatures of condensed matter physics of excitonic phenomena. We studied small signal steady state capacitance response in III-V materials based multi quantum well (AlGaInP) and MBE grown quantum dot (InGaAs) laser diodes to identify signatures of excitonic presence. Conductance activation by forward bias was probed using frequency dependent differential capacitance response (fdC/df), which changes characteristically with the onset of light emission indicating the occurrence of negative activation energy. Our analysis shows that it is connected with a steady state population of exciton like bound states. Calculated average energy of this bound state matches well with the binding energy of weakly confined excitons in this type of structures. Further increase in charge injection decreases the differential capacitive response in AlGaInP based diodes, indicating a gradual Mott transition of excitonic states into electron hole plasma. This electrical description of excitonic Mott transition is fully supplemented by standard optical spectroscopic signatures of band gap renormalization and phase space filling effects.

  14. Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

    SciTech Connect

    Kim, Yeongho; Ban, Keun-Yong Honsberg, Christiana B.; Boley, Allison; Smith, David J.

    2015-10-26

    The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (d{sub s} = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger d{sub s} due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with d{sub s} = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing d{sub s} due to the competing effects of decreased compressive strain and weak electronic coupling of stacked QD layers. The QD structure with d{sub s} = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.

  15. Phase separation and ordering in InGaAs and InGaAs materials. Final report

    SciTech Connect

    Not Available

    1995-02-23

    This report highlights the advances in the understanding of phase separation and atomic ordering in mixed III-V layers. Specifically, the following issues were addressed in the grant period (August 1987 to February 1992): (1) bulk vs surface phase separation; (2) influence of growth technique on phase separation; (3) origin of coarse contrast modulations; (4) influence of dopant diffusion on phase separated microstructures; (5) influence of annealing on carrier mobility in InGaAsP layers; (6) co-existence of CuPt-type ordering and phase separation; (7) influence of growth conditions on ordering; (8) influence of surface reconstruction on atomic ordering.

  16. Density functional calculation of the structural and electronic properties of germanium quantum dots

    SciTech Connect

    Anas, M. M.; Gopir, G.

    2015-04-24

    We apply first principles density functional computational methods to study the structures, densities of states (DOS), and higher occupied molecular orbital (HOMO) – lowest unoccupied molecular orbital (LUMO) gaps of selected free-standing Ge semiconductor quantum dots up to 1.8nm. Our calculations are performed using numerical atomic orbital approach where linear combination of atomic orbital was applied. The surfaces of the quantum dots was passivized by hydrogen atoms. We find that surface passivation does affect the electronic properties associated with the changes of surface state, electron localization, and the energy gaps of germanium nanocrystals as well as the confinement of electrons inside the quantum dots (QDs). Our study shows that the energy gaps of germanium quantum dots decreases with the increasing dot diameter. The size-dependent variations of the computed HOMO-LUMO gaps in our quantum dots model were found to be consistent with the effects of quantum confinement reported in others theoretical and experimental calculation.

  17. Structure, strain, and composition profiling of InAs/GaAs(211)B quantum dot superlattices

    NASA Astrophysics Data System (ADS)

    Florini, N.; Dimitrakopulos, G. P.; Kioseoglou, J.; Germanis, S.; Katsidis, C.; Hatzopoulos, Z.; Pelekanos, N. T.; Kehagias, Th.

    2016-01-01

    The morphology, nanostructure, and strain properties of InAs quantum dots (QDs) grown on GaAs(211)B, uncapped or buried, are explored by transmission electron microscopy and related quantitative techniques. Besides the built-in piezoelectric field, other differences of (211) growth compared to (100)-oriented growth are discussed in terms of the (211) surface non-singularity, leading to anisotropic shape of the QDs and local chemical inhomogeneity of the wetting layer. The shape of the uncapped QDs was precisely defined as truncated pyramidal, elongated along the <111> direction, and bounded by the {110}, {100}, and {213} facets. Local strain measurements showed that large surface QDs were almost unstrained due to plastic relaxation, exhibiting small residual elastic strain at the interface that gradually diminished toward their apex. Conversely, buried QDs were pseudomorphically grown on GaAs. By postulating a plane stress state, we have established a systematic increase of the local strain from the base toward the apex region of the QDs. Using Vegard's law, their chemical composition profiles were calculated, revealing an indium content gradient along the growth direction and compositional variants among different QDs. Photoluminescence measurements showed variations in emission energy between the QDs and consistency with a graded In-content, which complied with the quantitative strain analysis.

  18. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80 K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83 eV to 1.0 eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  19. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H.; Shen, F. K.

    2013-05-28

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  20. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  1. Towards deterministically controlled InGaAs/GaAs lateral quantum dot molecules

    NASA Astrophysics Data System (ADS)

    Wang, L.; Rastelli, A.; Kiravittaya, S.; Atkinson, P.; Ding, F.; Bof Bufon, C. C.; Hermannstädter, C.; Witzany, M.; Beirne, G. J.; Michler, P.; Schmidt, O. G.

    2008-04-01

    We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot molecules (QDMs) embedded in a GaAs matrix and we discuss strategies to fully control their spatial configuration and electronic properties. The three-dimensional morphology of encapsulated QDMs was revealed by selective wet chemical etching of the GaAs top capping layer and subsequent imaging by atomic force microscopy (AFM). The AFM investigation showed that different overgrowth procedures have a profound consequence on the QDM height and shape. QDMs partially capped and annealed in situ for micro-photoluminescence spectroscopy consist of shallow but well-defined quantum dots (QDs) in contrast to misleading results usually provided by surface morphology measurements when they are buried by a thin GaAs layer. This uncapping approach is crucial for determining the QDM structural parameters, which are required for modeling the system. A single-band effective-mass approximation is employed to calculate the confined electron and heavy-hole energy levels, taking the geometry and structural information extracted from the uncapping experiments as inputs. The calculated transition energy of the single QDM shows good agreement with the experimentally observed values. By decreasing the edge-to-edge distance between the two QDs within a QDM, a splitting of the electron (hole) wavefunction into symmetric and antisymmetric states is observed, indicating the presence of lateral coupling. Site control of such lateral QDMs obtained by growth on a pre-patterned substrate, combined with a technology to fabricate gate structures at well-defined positions with respect to the QDMs, could lead to deterministically controlled devices based on QDMs.

  2. Highly-reduced Fine-structure splitting in InAs/InP quantum dots offering efficient on-demand 1.55 μm entangled photon emitter

    NASA Astrophysics Data System (ADS)

    He, Lixin; Gong, M.; Li, C.-F.; Guo, G.-C.; Zunger, A.

    2009-03-01

    There has been intense recent interest in finding efficient entangled photon sources, including the demonstration of generation of ``event-ready'' entangled photon pairs via a biexciton cascade process using an (In,Ga)As/GaAs quantum dot(QD). However, a genuine finite energy difference between photons with different polarizations, known as the fine structure splitting (FSS), can destroy the entanglement of the photon pairs. To achieve entanglement from (In,Ga)As/GaAs QD, it was, indeed, necessary to Cherry-pick a sample with extremely small FSS from a large number of samples, or to apply strong in-plane magnetic field. Furthermore, the emission wavelength of (In,Ga)As/GaAs QD (880 - 950 nm) is mismatched with the 1.55 μm needed for communications using the optical fibers. Using theoretical modeling of the fundamental causes of FSS in QDs, we predict that the intrinsic FSS of InAs/InP QDs is an order of magnitude smaller than that of InAs/GaAs dots, and better yet, their excitonic gap matches the 1.55 μm fiber optic wavelength,therefore offer efficient on-demand entangled photon emitters for long distance quantum communication.

  3. Windmill structure

    SciTech Connect

    Yamada, M.

    1980-01-15

    A windmill structure is disclosed in which a combined structure of sails and electrical generator device is pivotally suspended so that the position of the combined structure may be shifted in accordance with the wind velocity.

  4. Cell Structure

    MedlinePlus

    ... Cells, Tissues, & Membranes Cell Structure & Function Cell Structure Cell Function Body Tissues Epithelial Tissue Connective Tissue Muscle Tissue ... apparatus , and lysosomes . « Previous (Cell Structure & Function) Next (Cell Function) » Contact Us | Privacy Policy | Accessibility | FOIA | File Formats ...

  5. On structures.

    PubMed

    Applegarth, A

    1989-01-01

    Some of the metapsychology involving the concept of structure is briefly reviewed, together with some difficulties presented by it. The concept of structure is defined, for purposes of the paper, and various kinds of structures are delineated. The author confines herself to the "microstructures," such as memories, cognitive structures, affect structures, defenses, identifications. Possible factors related to the development and maintenance of structures are discussed. In addition, the concept of structural change is taken up. It is suggested that an essential in such change is conscious review, however brief. The author proposes that structure formation and change is a fruitful area for mutual work by psychoanalysts and basic scientists.

  6. Direct Patterning of CdSe Quantum Dots into Sub-100 nm Structures

    SciTech Connect

    Hampton, Meredith J.; Templeton, Joseph L.; DeSimone, Joseph M.

    2010-03-02

    Ordered, two-dimensional cadmium selenide (CdSe) arrays have been fabricated on indium-doped tin oxide (ITO) electrodes using the pattern replication in nonwetting templates (PRINT) process. CdSe quantum dots (QDs) with an average diameter of 2.7 nm and a pyridine surface ligand were used for patterning. The PRINT technique utilizes a perfluoropolyether (PFPE) elastomeric mold that is tolerant of most organic solvents, thus allowing solutions of CdSe QDs in 4-picoline to be used for patterning without significant deformation of the mold. Nanometer-scale diffraction gratings have been successfully replicated with CdSe QDs.

  7. Four-State Sub-12-nm FETs Employing Lattice-Matched II-VI Barrier Layers

    NASA Astrophysics Data System (ADS)

    Jain, F.; Chan, P.-Y.; Suarez, E.; Lingalugari, M.; Kondo, J.; Gogna, P.; Miller, B.; Chandy, J.; Heller, E.

    2013-11-01

    Three-state behavior has been demonstrated in Si and InGaAs field-effect transistors (FETs) when two layers of cladded quantum dots (QDs), such as SiO x -cladded Si or GeO x -cladded Ge, are assembled on the thin tunnel gate insulator. This paper describes FET structures that have the potential to exhibit four states. These structures include: (1) quantum dot gate (QDG) FETs with dissimilar dot layers, (2) quantum dot channel (QDC) with and without QDG layers, (3) spatial wavefunction switched (SWS) FETs with multiple coupled quantum well channels, and (4) hybrid SWS-QDC structures having multiple drains/sources. Four-state FETs enable compact low-power novel multivalued logic and two-bit memory architectures. Furthermore, we show that the performance of these FETs can be enhanced by the incorporation of II-VI nearly lattice-matched layers in place of gate oxides and quantum well/dot barriers or claddings. Lattice-matched high-energy gap layers cause reduction in interface state density and control of threshold voltage variability, while providing a higher dielectric constant than SiO2. Simulations involving self-consistent solutions of the Poisson and Schrödinger equations, and transfer probability rate from channel (well or dot layer) to gate (QD layer) are used to design sub-12-nm FETs, which will aid the design of multibit logic and memory cells.

  8. Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure

    PubMed Central

    2014-01-01

    Time-dependent pH sensing phenomena of the core-shell CdSe/ZnS quantum dot (QD) sensors in EIS (electrolyte insulator semiconductor) structure have been investigated for the first time. The quantum dots are immobilized by chaperonin GroEL protein, which are observed by both atomic force microscope and scanning electron microscope. The diameter of one QD is approximately 6.5 nm. The QDs are not oxidized over a long time and core-shell CdSe/ZnS are confirmed by X-ray photon spectroscopy. The sensors are studied for sensing of hydrogen ions concentration in different buffer solutions at broad pH range of 2 to 12. The QD sensors show improved sensitivity (38 to 55 mV/pH) as compared to bare SiO2 sensor (36 to 23 mV/pH) with time period of 0 to 24 months, owing to the reduction of defects in the QDs. Therefore, the differential sensitivity of the QD sensors with respect to the bare SiO2 sensors is improved from 2 to 32 mV/pH for the time period of 0 to 24 months. After 24 months, the sensitivity of the QD sensors is close to ideal Nernstian response with good linearity of 99.96%. Stability and repeatability of the QD sensors show low drift (10 mV for 10 cycles) as well as small hysteresis characteristics (<10 mV). This QD sensor is very useful for future human disease diagnostics. PMID:24725352

  9. Multi-million atom electronic structure calculations for quantum dots

    NASA Astrophysics Data System (ADS)

    Usman, Muhammad

    stark shift, coherent coupling of electronic states in a quantum dot molecule etc.; (3) to assess the potential use of the quantum dots in real device implementation and to provide physical insight to the experimentalists. Full three dimensional strain and electronic structure simulations of quantum dot structures containing multi-million atoms are done using NEMO 3-D. Both single and vertically stacked quantum dot structures are analyzed in detail. The results show that the strain and the piezoelectricity significantly impact the electronic structure of these devices. This work shows that the InAs quantum dots when placed in the InGaAs quantum well red shifts the emission wavelength. Such InAs/GaAs-based optical devices can be used for optical-fiber based communication systems at longer wavelengths (1.3um -- 1.5um). Our atomistic simulations of InAs/InGaAs/GaAs quantum dots quantitatively match with the experiment and give the critical insight of the physics involved in these structures. A single quantum dot molecule is studied for coherent quantum coupling of electronic states under the influence of static electric field applied in the growth direction. Such nanostructures can be used in the implementation of quantum information technologies. A close quantitative match with the experimental optical measurements allowed us to get a physical insight into the complex physics of quantum tunnel couplings of electronic states as the device operation switches between atomic and molecular regimes. Another important aspect is to design the quantum dots for a desired isotropic polarization of the optical emissions. Both single and coupled quantum dots are studied for TE/TM ratio engineering. The atomistic study provides a detailed physical analysis of these computationally expensive large nanostructures and serves as a guide for the experimentalists for the design of the polarization independent devices for the optical communication systems.

  10. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

    SciTech Connect

    Huang, S.; Kim, S. J.; Pan, X. Q.; Goldman, R. S.

    2014-07-21

    We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

  11. Website Structure

    ERIC Educational Resources Information Center

    Jackson, Larry S.

    2009-01-01

    This dissertation reports the results of an exploratory data analysis investigation of the relationship between the structures used for information organization and access and the associated storage structures within state government websites. Extending an earlier claim that hierarchical directory structures are both the preeminent information…

  12. Characterization of spin-orbit coupling in gated wire structures using Al2O3/In0.75Ga0.25As/In0.75Al0.25As inverted heterojunctions

    NASA Astrophysics Data System (ADS)

    Ohori, Takahiro; Akabori, Masashi; Hidaka, Shiro; Yamada, Syoji

    2016-10-01

    Gated parallel wire structures obtained from inverted-modulation-doped heterojunctions made of high-In-content metamorphic InGaAs/InAlAs were investigated. The narrowest wire width was found to be ˜190 nm made using electron beam lithography and reactive ion etching. Magneto-transport was measured at low temperatures. Weak anti-localization and suppression with applied negative gate voltages were observed in low-mobility wide wires (1360 nm), which were considered for a two-dimensional system. The dependence on the gate voltage of spin-orbit coupling parameters was also obtained by fitting. The parameters decreased as the negative gate voltages increased. The trend might originate not from the electron system at the InGaAs/InAlAs interface but from the other electron system accumulated at the Al2O3/InGaAs interface, which can also contribute to conductivity. In high-mobility narrow wires (190 nm), which are close to a one-dimensional system, weak anti-localization peaks were still observed, indicating strong spin-orbit coupling. In addition, the critical widths of wires corresponding to zero conductance were estimated to be <100 nm. Therefore, our metamorphic modulation doped heterojunctions seem suitable for smaller spin-FETs.

  13. Capacitance transient analysis of different-sized InAs/GaAs quantum dot structures.

    PubMed

    Song, Hooyoung; Kim, Jin Soak; Kim, Eun Kyu; Lee, Sang Jun; Noh, Sam Kyu

    2011-07-01

    The energy states of InAs/GaAs self-assembled quantum dots (QDs) were analyzed by comparing between two QD systems with different QD sizes. The electrical properties of the QD systems were investigated via capacitance-voltage measurements and capacitance transient spectroscopy (also known as deep-level transient spectroscopy) with selective carrier injection and extraction which can be achieved with very small pulse amplitude under bias variation. For the large QDs, several energy states were found with the use of selective carrier injection and extraction. The thermal-activation energies obtained from the capacitance transient spectra of the large QDs were distributed from 70 to 600 meV. This energy distribution was originated from the quantized states of the individual QDs and the size distribution of the QDs. The spectra of the small QDs showed a well-defined energy state of E(c) - 132 meV. From these results, it was estimated that two to four electrons fill a single QD under the proper measurement bias of 0.2 V pulse. PMID:22121745

  14. Recognition-Mediated Assembly of Quantum Dot Polymer Conjugates with Controlled Morphology

    PubMed Central

    Nandwana, Vikas; Subramani, Chandramouleeswaran; Eymur, Serkan; Yeh, Yi-Cheun; Tonga, Gulen Yesilbag; Tonga, Murat; Jeong, Youngdo; Yang, Boqian; Barnes, Michael D.; Cooke, Graeme; Rotello, Vincent M.

    2011-01-01

    We have demonstrated a polymer mediated “bricks and mortar” method for the self-assembly of quantum dots (QDs). This strategy allows QDs to self-assemble into structured aggregates using complementary three-point hydrogen bonding. The resulting nanocomposites have distinct morphologies and inter-particle distances based on the ratio between QDs and polymer. Time resolved photoluminescence measurements showed that the optical properties of the QDs were retained after self-assembly. PMID:22016664

  15. Aeropropulsion structures

    NASA Technical Reports Server (NTRS)

    Nichols, Lester D.

    1987-01-01

    The structural engineer is faced with unique problems when dealing with aeropropulsion systems. He is faced with extremes in operating temperatures, rotational effects, and behaviors of advanced material systems which combine into complexities that require advances in many scientific disciplines involved in structural analysis and design procedures. This presentation provides an overview of the complexities of aeropropulsion structures and the theoretical, computational, and experimental research conducted to achieve the needed advances.

  16. A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

    NASA Astrophysics Data System (ADS)

    de la Mata, Maria; Zhou, Xiang; Furtmayr, Florian; Teubert, Jörg; Gradecak, Silvija; Eickhoff, Martin; Fontcuberta i Morral, Anna; Arbiol, Jordi

    2013-05-01

    We review different strategies to achieve a three-dimensional energy bandgap modulation in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum structures, quantum dots (QDs), quantum wires (QWRs) and quantum wells (QWs). Starting with the well-known axial, radial (coaxial/prismatic) or polytypic quantum wells in GaN/AlN, GaAs/AlAs or wurtzite/zinc-blende systems, respectively, we move to more sophisticated structures by lowering their dimensionality. New recent approaches developed for the self-assembly of GaN quantum wires and InAs or AlGaAs quantum dots on single nanowire templates are reported and discussed. Aberration corrected scanning transmission electron microcopy is presented as a powerful tool to determine the structure and morphology at the atomic scale allowing for the creation of 3D atomic models that can help us to understand the enhanced optical properties of these advanced quantum structures.

  17. Emission wavelength tuning of fluorescence by fine structural control of optical metamaterials with Fano resonance.

    PubMed

    Moritake, Y; Kanamori, Y; Hane, K

    2016-01-01

    We demonstrated fine emission wavelength tuning of quantum dot (QD) fluorescence by fine structural control of optical metamaterials with Fano resonance. An asymmetric-double-bar (ADB), which was composed of only two bars with slightly different bar lengths, was used to obtain Fano resonance in the optical region. By changing the short bar length of ADB structures with high dimensional accuracy in the order of 10 nm, resonant wavelengths of Fano resonance were controlled from 1296 to 1416 nm. Fluorescence of QDs embedded in a polymer layer on ADB metamaterials were modified due to coupling to Fano resonance and fine tuning from 1350 to 1376 nm was observed. Wavelength tuning of modified fluorescence was reproduced by analysis using absorption peaks of Fano resonance. Tuning range of modified fluorescence became narrow, which was interpreted by a simple Gaussian model and resulted from comparable FWHM in QD fluorescence and Fano resonant peaks. The results will help the design and fabrication of metamaterial devices with fluorophores such as light sources and biomarkers. PMID:27622503

  18. Emission wavelength tuning of fluorescence by fine structural control of optical metamaterials with Fano resonance

    PubMed Central

    Moritake, Y.; Kanamori, Y.; Hane, K.

    2016-01-01

    We demonstrated fine emission wavelength tuning of quantum dot (QD) fluorescence by fine structural control of optical metamaterials with Fano resonance. An asymmetric-double-bar (ADB), which was composed of only two bars with slightly different bar lengths, was used to obtain Fano resonance in the optical region. By changing the short bar length of ADB structures with high dimensional accuracy in the order of 10 nm, resonant wavelengths of Fano resonance were controlled from 1296 to 1416 nm. Fluorescence of QDs embedded in a polymer layer on ADB metamaterials were modified due to coupling to Fano resonance and fine tuning from 1350 to 1376 nm was observed. Wavelength tuning of modified fluorescence was reproduced by analysis using absorption peaks of Fano resonance. Tuning range of modified fluorescence became narrow, which was interpreted by a simple Gaussian model and resulted from comparable FWHM in QD fluorescence and Fano resonant peaks. The results will help the design and fabrication of metamaterial devices with fluorophores such as light sources and biomarkers. PMID:27622503

  19. Emission wavelength tuning of fluorescence by fine structural control of optical metamaterials with Fano resonance.

    PubMed

    Moritake, Y; Kanamori, Y; Hane, K

    2016-09-13

    We demonstrated fine emission wavelength tuning of quantum dot (QD) fluorescence by fine structural control of optical metamaterials with Fano resonance. An asymmetric-double-bar (ADB), which was composed of only two bars with slightly different bar lengths, was used to obtain Fano resonance in the optical region. By changing the short bar length of ADB structures with high dimensional accuracy in the order of 10 nm, resonant wavelengths of Fano resonance were controlled from 1296 to 1416 nm. Fluorescence of QDs embedded in a polymer layer on ADB metamaterials were modified due to coupling to Fano resonance and fine tuning from 1350 to 1376 nm was observed. Wavelength tuning of modified fluorescence was reproduced by analysis using absorption peaks of Fano resonance. Tuning range of modified fluorescence became narrow, which was interpreted by a simple Gaussian model and resulted from comparable FWHM in QD fluorescence and Fano resonant peaks. The results will help the design and fabrication of metamaterial devices with fluorophores such as light sources and biomarkers.

  20. Emission wavelength tuning of fluorescence by fine structural control of optical metamaterials with Fano resonance

    NASA Astrophysics Data System (ADS)

    Moritake, Y.; Kanamori, Y.; Hane, K.

    2016-09-01

    We demonstrated fine emission wavelength tuning of quantum dot (QD) fluorescence by fine structural control of optical metamaterials with Fano resonance. An asymmetric-double-bar (ADB), which was composed of only two bars with slightly different bar lengths, was used to obtain Fano resonance in the optical region. By changing the short bar length of ADB structures with high dimensional accuracy in the order of 10 nm, resonant wavelengths of Fano resonance were controlled from 1296 to 1416 nm. Fluorescence of QDs embedded in a polymer layer on ADB metamaterials were modified due to coupling to Fano resonance and fine tuning from 1350 to 1376 nm was observed. Wavelength tuning of modified fluorescence was reproduced by analysis using absorption peaks of Fano resonance. Tuning range of modified fluorescence became narrow, which was interpreted by a simple Gaussian model and resulted from comparable FWHM in QD fluorescence and Fano resonant peaks. The results will help the design and fabrication of metamaterial devices with fluorophores such as light sources and biomarkers.

  1. Magnetically-tunable spin-selective positioning of wave functions in asymmetric semiconductor quantum structures

    NASA Astrophysics Data System (ADS)

    Lee, S.; Titova, L. V.; Furdyna, Jacek K.; Dobrowolska, M.

    2000-03-01

    It has been recently reported that the properties of self-organized CdSe quantum dots (QDs) on ZnSe change significantly when they are grown on ZnMnSe spacers separating CdSe form ZnSe.[1] To explore this effect futher, we have prepared a series of samples by depositing one monolayer (ML) of CdSe on ZnMnSe spacer layers of different thickness and different Mn concentration. The system is then capped with ZnSe. The band structure for this geometry results in an asymmetric quantum structure, where the 1 ML thick CdSe acts as a "well" between barriers comprised of ZnSe on side, and ZnMnSe on the other. When a magnetic field is applied, the Zeeman splitting of the band edges in ZnMnSe spacer moves the position of the wave function toward or away from the spacer, depending on spin orientation. Such spin-selective repositioning of the wave functions is fully confirmed by magnetic field dependence of ground state exciton transitions observed in PL. This work was supported by NSF Grant DMR 9705064. [1]C.S. Kim et.al., 9th International conference on II-VI compounds, Kyoto, Nov. 1-5, 1999.

  2. 1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser.

    PubMed

    Zhang, Z Y; Oehler, A E H; Resan, B; Kurmulis, S; Zhou, K J; Wang, Q; Mangold, M; Süedmeyer, T; Keller, U; Weingarten, K J; Hogg, R A

    2012-01-01

    High pulse repetition rate (≥ 10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ∼2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices.

  3. 1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser

    PubMed Central

    Zhang, Z. Y.; Oehler, A. E. H.; Resan, B.; Kurmulis, S.; Zhou, K. J.; Wang, Q.; Mangold, M.; Süedmeyer, T.; Keller, U.; Weingarten, K. J.; Hogg, R. A.

    2012-01-01

    High pulse repetition rate (≥10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ∼2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices. PMID:22745898

  4. Relative degradation of near infrared avalanche photodiodes from proton irradiation

    NASA Technical Reports Server (NTRS)

    Becker, Heidi; Johnston, Allan H.

    2004-01-01

    InGaAs and Ge avalanche photodiodes are compared for the effects of 63-MeV protons on dark current. Differences in displacement damage factors are discussed as they relate to structural differences between devices.

  5. Structural Ceramics

    NASA Technical Reports Server (NTRS)

    1986-01-01

    This publication is a compilation of abstracts and slides of papers presented at the NASA Lewis Structural Ceramics Workshop. Collectively, these papers depict the scope of NASA Lewis' structural ceramics program. The technical areas include monolithic SiC and Si3N4 development, ceramic matrix composites, tribology, design methodology, nondestructive evaluation (NDE), fracture mechanics, and corrosion.

  6. Organisational Structure

    ERIC Educational Resources Information Center

    National Centre for Vocational Education Research (NCVER), 2006

    2006-01-01

    An understanding of organisational structure can provide guidance for organisations that want to change and innovate. Many writers agree that this understanding allows organisations to shape how their work is done to ultimately achieve their business goals--and that too often structure is given little consideration in business strategy and…

  7. Protein Structure

    ERIC Educational Resources Information Center

    Asmus, Elaine Garbarino

    2007-01-01

    Individual students model specific amino acids and then, through dehydration synthesis, a class of students models a protein. The students clearly learn amino acid structure, primary, secondary, tertiary, and quaternary structure in proteins and the nature of the bonds maintaining a protein's shape. This activity is fun, concrete, inexpensive and…

  8. Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well structure

    SciTech Connect

    Asahi, S.; Teranishi, H.; Kasamatsu, N.; Kada, T.; Kaizu, T.; Kita, T.

    2014-08-14

    We investigated the effects of an increase in the barrier height on the enhancement of the efficiency of two-step photo-excitation in InAs quantum dot (QD) solar cells with a dot-in-well structure. Thermal carrier escape of electrons pumped in QD states was drastically reduced by sandwiching InAs/GaAs QDs with a high potential barrier of Al{sub 0.3}Ga{sub 0.7}As. The thermal activation energy increased with the introduction of the barrier. The high potential barrier caused suppression of thermal carrier escape and helped realize a high electron density in the QD states. We observed efficient two-step photon absorption as a result of the high occupancy of the QD states at room temperature.

  9. Curriculum Structure and Faculty Structure.

    ERIC Educational Resources Information Center

    Hazard, Geoffrey C., Jr.

    1985-01-01

    The structure of the law school curriculum is a product of the structure of the law school faculty, which may explain why the law school curriculum neither has changed very much over the years, despite repeated calls for reform, nor will change much in the future. (MSE)

  10. Spacecraft Structures

    NASA Video Gallery

    This activity challenges students to solve a real-world problem that is part of the space program using creativity, cleverness and scientific knowledge while learning about forces, structures and e...

  11. Nuclear Structure

    NASA Astrophysics Data System (ADS)

    Gargano, Angela

    2003-04-01

    An account of recent studies in the field of theoretical nuclear structure is reported. These studies concern essentially research activities performed under the Italian project "Fisica Teorica del Nucleo e dei Sistemi a Molti Corpi". Special attention is addressed to results obtained during the last two years as regards the development of new many-body techniques as well as the interpretation of new experimental aspects of nuclear structure.

  12. Structural Analysis

    NASA Technical Reports Server (NTRS)

    1991-01-01

    After an 800-foot-tall offshore oil recovery platform collapsed, the engineers at Engineering Dynamics, Inc., Kenner, LA, needed to learn the cause of the collapse, and analyze the proposed repairs. They used STAGSC-1, a NASA structural analysis program with geometric and nonlinear buckling analysis. The program allowed engineers to determine the deflected and buckling shapes of the structural elements. They could then view the proposed repairs under the pressure that caused the original collapse.

  13. Structures research

    NASA Technical Reports Server (NTRS)

    Abu-Saba, Elias; Mcginley, Williams; Shen, Ji-Yao

    1992-01-01

    The main objective of the structures group is to provide quality aerospace research with the Center for Aerospace Research - A NASA Center for Excellence at North Carolina Agricultural and Technical State University. The group includes dedicated faculty and students who have a proven record in the area of structures, in particular space structures. The participating faculty developed accurate mathematical models and effective computational algorithms to characterize the flexibility parameters of joint dominated beam-truss structures. Both experimental and theoretical modelling has been applied to the dynamic mode shapes and mode frequencies for a large truss system. During the past few months, the above procedures has been applied to the hypersonic transport plane model. The plane structure has been modeled as a lumped mass system by Doctor Abu-Saba while Doctor Shen applied the transfer matrix method with a piecewise continuous Timoshenko tapered beam model. Results from both procedures compare favorably with those obtained using the finite element method. These two methods are more compact and require less computer time than the finite element method. The group intends to perform experiments on structural systems including the hypersonic plane model to verify the results from the theoretical models.

  14. Structures Division

    NASA Technical Reports Server (NTRS)

    1997-01-01

    The NASA Lewis Research Center Structures Division is an international leader and pioneer in developing new structural analysis, life prediction, and failure analysis related to rotating machinery and more specifically to hot section components in air-breathing aircraft engines and spacecraft propulsion systems. The research consists of both deterministic and probabilistic methodology. Studies include, but are not limited to, high-cycle and low-cycle fatigue as well as material creep. Studies of structural failure are at both the micro- and macrolevels. Nondestructive evaluation methods related to structural reliability are developed, applied, and evaluated. Materials from which structural components are made, studied, and tested are monolithics and metal-matrix, polymer-matrix, and ceramic-matrix composites. Aeroelastic models are developed and used to determine the cyclic loading and life of fan and turbine blades. Life models are developed and tested for bearings, seals, and other mechanical components, such as magnetic suspensions. Results of these studies are published in NASA technical papers and reference publication as well as in technical society journal articles. The results of the work of the Structures Division and the bibliography of its publications for calendar year 1995 are presented.

  15. Centriole structure.

    PubMed

    Winey, Mark; O'Toole, Eileen

    2014-09-01

    Centrioles are among the largest protein-based structures found in most cell types, measuring approximately 250 nm in diameter and approximately 500 nm long in vertebrate cells. Here, we briefly review ultrastructural observations about centrioles and associated structures. At the core of most centrioles is a microtubule scaffold formed from a radial array of nine triplet microtubules. Beyond the microtubule triplets of the centriole, we discuss the critically important cartwheel structure and the more enigmatic luminal density, both found on the inside of the centriole. Finally, we discuss the connectors between centrioles, and the distal and subdistal appendages outside of the microtubule scaffold that reflect centriole age and impart special functions to the centriole. Most of the work we review has been done with electron microscopy or electron tomography of resin-embedded samples, but we also highlight recent work performed with cryoelectron microscopy, cryotomography and subvolume averaging. Significant opportunities remain in the description of centriolar structure, both in mapping of component proteins within the structure and in determining the effect of mutations on components that contribute to the structure and function of the centriole.

  16. Structural biology.

    PubMed Central

    Holmes, K C

    1999-01-01

    Protein crystallography has become a major technique for understanding cellular processes. This has come about through great advances in the technology of data collection and interpretation, particularly the use of synchrotron radiation. The ability to express eukaryotic genes in Escherichia coli is also important. Analysis of known structures shows that all proteins are built from about 1000 primeval folds. The collection of all primeval folds provides a basis for predicting structure from sequence. At present about 450 are known. Of the presently sequenced genomes only a fraction can be related to known proteins on the basis of sequence alone. Attempts are being made to determine all (or as many as possible) of the structures from some bacterial genomes in the expectation that structure will point to function more reliably than does sequence. Membrane proteins present a special problem. The next 20 years may see the experimental determination of another 40,000 protein structures. This will make considerable demands on synchrotron sources and will require many more biochemists than are currently available. The availability of massive structure databases will alter the way biochemistry is done. PMID:10670018

  17. Multicolored silica coated CdSe core/shell quantum dots

    NASA Astrophysics Data System (ADS)

    Goftman, Valentina V.; Markin, Alexey V.; De Saeger, Sarah; Goryacheva, Irina Y.

    2016-04-01

    Silanization is a convenient route to provide water-solubility to the quantum dots (QDs) with different structure. Green, orange and red emitting CdSe-based QDs were synthesized by varying of number and material of wider-band gap shells and fluorescent properties of QDs were characterized before and after silanization. It was shown that structure of the QD influences on the quantum yield of the silanized QDs: the better CdSe core is protected with wider-band gap semiconductor shells, the more fluorescence properties remain after silica coated QD possess. Hence silica coated QDs have a great perspectives for the multiplex analysis.

  18. Composite structural materials. [aircraft structures

    NASA Technical Reports Server (NTRS)

    Ansell, G. S.; Loewy, R. G.; Wiberley, S. E.

    1980-01-01

    The use of filamentary composite materials in the design and construction of primary aircraft structures is considered with emphasis on efforts to develop advanced technology in the areas of physical properties, structural concepts and analysis, manufacturing, and reliability and life prediction. The redesign of a main spar/rib region on the Boeing 727 elevator near its actuator attachment point is discussed. A composite fabrication and test facility is described as well as the use of minicomputers for computer aided design. Other topics covered include (1) advanced structural analysis methids for composites; (2) ultrasonic nondestructive testing of composite structures; (3) optimum combination of hardeners in the cure of epoxy; (4) fatigue in composite materials; (5) resin matrix characterization and properties; (6) postbuckling analysis of curved laminate composite panels; and (7) acoustic emission testing of composite tensile specimens.

  19. Tension Structure

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The fabric structure pictured is the Campus Center of La Verne College, La Verne, California. Unlike the facilities shown on the preceding pages, it is not air-supported. It is a "tension structure," its multi-coned fabric membrane supported by a network of cables attached to steel columns which function like circus tent poles. The spider-web in the accompanying photo is a computer graph of the tension pattern. The designers, Geiger-Berger Associates PC, of New York City, conducted lengthy computer analysis to determine the the best placement of columns and cables. The firm also served as structural engineering consultant on the Pontiac Silverdome and a number of other large fabric structures. Built by Birdair Structures, Inc., Buffalo, New York, the La Verne Campus Center was the first permanent facility in the United States enclosed by the space-spinoff fabric made of Owens-Corning Beta fiber glass coated with Du Pont Teflon TFE. The flexible design permits rearrangement of the interior to accommodate athletic events, student activities, theatrical productions and other recreational programs. Use of fabric covering reduced building cost 30 percent below conventional construction.

  20. Microcavity structures

    SciTech Connect

    Kustom, R.L.; Grudzien, D.; Feinerman, A.D.

    1994-10-01

    The feasibility of building mm-wave cavities using deep x-ray lithography techniques is being investigated. These cavities could be considered for linac accelerating structures, undulators, free electron lasers, or mm-wave amplifiers. The construction process includes making precision x-ray masks, x-ray exposure of poly-methyl-methacrylate (PMMA), removal of PMMA, and electroplating a metal. Highly precise two-dimensional features can be machined onto wafers by this technique. The challenge is to fabricate the wafers onto three-dimensional rf structures. Rectangular cavity geometry is best suited to this fabrication technique. Status of wafer manufacture, fabrication and alignment techniques using capillaries bonded in precision grooves, 2{pi}/3 120-GHz linac structures, heat extraction analysis, and beam dynamics in a 5-meter-long 50-MeV linac will be discussed. Measurements made on 10X larger scale models that were built with conventional techniques will also be discussed.

  1. Structural Diagnosis

    NASA Technical Reports Server (NTRS)

    1987-01-01

    All over the world, officials charged with preserving historical structures are faced with a problem of environmental contamination of building materials that cause structural deterioration. First requisite for preserving the structure is identification of the nature of contaminants. A "non-invasive"technique based on space technology has been developed and tested. It employs a neutron source and a gamma ray detector. Placed on one side of the wall to be examined, the source fires neutrons created by the decay of a radioactive isotope. As they pass through the wall, the neutrons collide with atoms and the atoms, depending on their type, emit various kinds of gamma rays. These rays are identified by the gamma ray detector on the other side of the wall. Energy of the rays shows the kind of element present. The intensity level indicates the quantity. Composition of the contaminants within the walls is determined by a multichannel analyzer.

  2. Structure of

    PubMed

    Mahmoudkhani; Langer

    1999-10-01

    The crystal structure of the title compound, dimethylammonium tetrachlorocobaltate(II), has been determined at four temperatures between 297 and 366 K, in order to investigate possible phase transitions at 313 and 353 K [Kapustianik, Polovinko & Kaluza et al. (1996). Phys. Status Solidi A, 153, 117-122]. We found that there is no significant change either in the hydrogen-bonding network or in the cell parameters, apart from a linear dilatation with temperature. This study reveals that the anomalous variation in electric conductivity and some of the other physical properties of the compound cannot be explained by structural changes.

  3. Electronic Structure of Ligated CdSe Clusters: Dependence on DFT Methodology

    SciTech Connect

    Albert, Victor V.; Ivanov, Sergei A.; Tretiak, Sergei; Kilina, Svetlana V.

    2011-08-18

    Simulations of ligated semiconductor quantum dots (QDs) and their physical properties, such as morphologies, QD–ligand interactions, electronic structures, and optical transitions, are expected to be very sensitive to computational methodology. We utilize Density Functional Theory (DFT) and systematically study how the choice of density functional, atom-localized basis set, and a solvent affects the physical properties of the Cd33Se33 cluster ligated with a trimethylphosphine oxide ligand. We have found that qualitative performance of all exchange-correlation (XC) functionals is relatively similar in predicting strong QD–ligand binding energy (~1 eV). Additionally, all functionals predict shorter Cd–Se bond lengths on the QD surface than in its core, revealing the nature and degree of QD surface reconstruction. For proper modeling of geometries and QD–ligand interactions, however, augmentation of even a moderately sized basis set with polarization functions (e.g., LANL2DZ* and 6-31G*) is very important. A polar solvent has very significant implications for the ligand binding energy, decreasing it to 0.2–0.5 eV. However, the solvent model has a minor effect on the optoelectronic properties, resulting in persistent blue shifts up to ~0.3 eV of the low-energy optical transitions. For obtaining reasonable energy gaps and optical transition energies, hybrid XC functionals augmented by a long-range Hartree–Fock orbital exchange have to be applied.

  4. Electronic Structure of Ligated CdSe Clusters: Dependence on DFT Methodology

    SciTech Connect

    Albert, VV; Ivanov, SA; Tretiak, S; Kilina, SV

    2011-07-07

    Simulations of ligated semiconductor quantum dots (QDs) and their physical properties, such as morphologies, QD-ligand interactions, electronic structures, and optical transitions, are expected to be very sensitive to computational methodology. We utilize Density Functional Theory (DFT) and systematically study how the choice of density functional, atom-localized basis set, and a solvent affects the physical properties of the Cd{sub 33}Se{sub 33} cluster ligated with a trimethyl phosphine oxide ligand. We have found that qualitative performance of all exchange-correlation (XC) functionals is relatively similar in predicting strong QD-ligand binding energy ({approx}1 eV). Additionally, all functionals predict shorter Cd-Se bond lengths on the QD surface than in its core, revealing the nature and degree of QD surface reconstruction. For proper modeling of geometries and QD-ligand interactions, however, augmentation of even a moderately sized basis set with polarization functions (e.g., LANL2DZ* and 6-31G*) is very important. A polar solvent has very significant implications for the ligand binding energy, decreasing it to 0.2-0.5 eV. However, the solvent model has a minor effect on the optoelectronic properties, resulting in persistent blue shifts up to {approx}0.3 eV of the low-energy optical transitions. For obtaining reasonable energy gaps and optical transition energies, hybrid XC functionals augmented by a long-range Hartree-Fock orbital exchange have to be applied.

  5. Targeting and retention enhancement of quantum dots decorated with amino acids in an invertebrate model organism

    NASA Astrophysics Data System (ADS)

    Xing, Rui; Chen, Xue-Dong; Zhou, Yan-Feng; Zhang, Jue; Su, Yuan-Yuan; Qiu, Jian-Feng; Sima, Yang-Hu; Zhang, Ke-Qin; He, Yao; Xu, Shi-Qing

    2016-01-01

    The use of quantum dots (QDs) in biological imaging applications and targeted drug delivery is expected to increase. However, the efficiency of QDs in drug targeting needs to be improved. Here, we show that amino acids linked to CdTe QDs significantly increased the targeted transfer efficiency and biological safety in the invertebrate model Bombyx mori. Compared with bare QDs530, the transfer efficiency of Ala- and Gly-conjugated QDs (QDs530-Ala and QDs530-Gly) in circulatory system increased by 2.6 ± 0.3 and 1.5 ± 0.3 times, and increased by 7.8 ± 0.9 and 2.9 ± 0.2 times in target tissue silk glands, respectively, after 24 h of QDs exposure. Meanwhile, the amount of conjugated QDs decreased by (68.4 ± 4.4)% and (46.7 ± 9.1)% in the non-target tissue fat body, and the speed at which they entered non-target circulating blood cells significantly decreased. The resultant QDs530-Ala revealed a better structural integrity in tissues and a longer retention time in hemolymph than that of QDs530 after exposure via the dorsal vessel. On the other hand, QDs530-Ala significantly reduced the toxicity to hemocytes, silk gland, and fat body, and reduced the amount of reactive oxygen species (ROS) in tissues.

  6. Structural evolution

    SciTech Connect

    Burr, M.T.

    1993-03-01

    In this special report, financial executives discuss key trends in power project finance, new funding sources and evolving project structures. Industry wide, financial firms and developers are striving to improve the cost-effectiveness and efficiency of project financing, for projects in both greenfield development and the growing secondary market.

  7. Nanocrystal structures

    DOEpatents

    Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

    2006-12-19

    A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

  8. Structural Adaptation

    ERIC Educational Resources Information Center

    Crowley, Julianne; Titmus, Morgan

    2016-01-01

    This article explores an alternative conception held by high school and first-year university biology students regarding the structure of the left and right ventricles of the heart and the significance of the left ventricular wall being thicker than the right. The left ventricular wall of the heart is thicker than the right ventricular wall due to…

  9. Nanocrystal structures

    SciTech Connect

    Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

    2008-12-30

    A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

  10. Miniband formulation in Ge/Si quantum dot array

    NASA Astrophysics Data System (ADS)

    Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji

    2016-04-01

    In this work, we estimate the coupling effect of miniband structure and density of states (DoS) resulting from different qunatum-dot physical parameters in a well-aligned Ge/Si quantum dot (QD) array fabricated by neutral beam etching technology. The density of QDs dominates the coupling effect and miniband’s bandwidth, the radius of QDs affects the magnitude of energy levels and miniband bandwidth, and the thickness of QDs has a great impact on the magnitude of energy levels. Among the different shapes of Ge/Si QDs, discoid QDs exhibit the most band crossing and broadest bandwith under the same physical parameters.

  11. Unusual narrowing of the ESR line width in ordered structures with linear chains of Ge/Si quantum dots

    NASA Astrophysics Data System (ADS)

    Zinovieva, A. F.; Smagina, Zh. V.; Nenashev, A. V.; Kulik, L. V.; Dvurechenskii, A. V.

    2015-07-01

    Electron states in ordered Ge/Si heterostructures with linear chains of quantum dots (QDs) were studied by the electron spin resonance (ESR) method. A new ESR signal with principal g-factor values g zz = 1.9993 ± 0.0001, g xx = g yy = 1.9990 ± 0.0001 was detected. Unlike disordered QD structures, where ESR line broadening is usually observed (evidence of Dyakonov-Perel mechanism efficiency), the structures under study demonstrate the narrowing of ESR line when the external magnetic field deviates from the growth direction. The ESR line width is Δ H = 1.2 Oe for perpendicular magnetic field (along the growth direction) and Δ H = 0.8 Oe for in-plane magnetic field. The narrowing of ESR line can be explained by combination of two mechanisms. The first one is suppression of Dyakonov-Perel spin relaxation due to a settled direction of electron motion and finiteness of QD chains. The second one is cancelation of the wavefunction shrinking effect with decreasing the perpendicular component of the magnetic field.

  12. Terminal structure

    DOEpatents

    Schmidt, Frank; Allais, Arnaud; Mirebeau, Pierre; Ganhungu, Francois; Lallouet, Nicolas

    2009-10-20

    A terminal structure (2) for a superconducting cable (1) is described. It consists of a conductor (2a) and an insulator (2b) that surrounds the conductor (2a), wherein the superconducting cable (1) has a core with a superconducting conductor (5) and a layer of insulation that surrounds the conductor (5), and wherein the core is arranged in such a way that it can move longitudinally in a cryostat. The conductor (2a) of the terminal structure (2) is electrically connected with the superconducting conductor (5) or with a normal conductor (6) that is connected with the superconducting conductor (5) by means of a tubular part (7) made of an electrically conductive material, wherein the superconducting conductor (5) or the normal conductor (6) can slide in the part (7) in the direction of the superconductor.

  13. Superconducting Structure

    DOEpatents

    Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

    2005-09-13

    A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

  14. Superconducting structure

    DOEpatents

    Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

    2003-04-01

    A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

  15. Airfoil structure

    SciTech Connect

    Frey, Gary A.; Twardochleb, Christopher Z.

    1998-01-01

    Past airfoil configurations have been used to improve aerodynamic performance and engine efficiencies. The present airfoil configuration further increases component life and reduces maintenance by reducing internal stress within the airfoil itself. The airfoil includes a chord and a span. Each of the chord and the span has a bow being summed to form a generally "C" configuration of the airfoil. The generally "C" configuration includes a compound bow in which internal stresses resulting from a thermal temperature gradient are reduced. The structural configuration reduces internal stresses resulting from thermal expansion.

  16. Airfoil structure

    DOEpatents

    Frey, G.A.; Twardochleb, C.Z.

    1998-01-13

    Past airfoil configurations have been used to improve aerodynamic performance and engine efficiencies. The present airfoil configuration further increases component life and reduces maintenance by reducing internal stress within the airfoil itself. The airfoil includes a chord and a span. Each of the chord and the span has a bow being summed to form a generally ``C`` configuration of the airfoil. The generally ``C`` configuration includes a compound bow in which internal stresses resulting from a thermal temperature gradient are reduced. The structural configuration reduces internal stresses resulting from thermal expansion. 6 figs.

  17. Three bisphosphonate ligands improve the water solubility of quantum dots.

    PubMed

    Abdul Ghani, Siti Fatimah; Wright, Michael; Paramo, Juan Gallo; Bottrill, Melanie; Green, Mark; Long, Nicholas; Thanou, Maya

    2014-01-01

    Synthesised Quantum Dots (QDs) require surface modification in order to improve their aqueous dispersion and biocompatibility. Here, we suggest bisphosphonate molecules as agents to modify the surface of QDs for improved water solubility and biocompatibility. QDs_TOPO (CdSe/ZnS-trioctylphosphine oxide) were synthesised following modification of the method of Bawendi et al. (J. Phys. Chem. B, 1997, 101, 9463-9475). QDs surface modification is performed using a ligand exchange reaction with structurally different bisphosphonates (BIPs). The BIPs used were ethylene diphosphonate (EDP), methylenediphosphonate (MDP) and imidodiphosphonate (IDP). After ligand exchange, the QDs were extensively purified using centrifugation, PD-10 desalting columns and mini dialysis filters. Transmission electron microscopy (TEM) and fluorescent spectroscopy have been used to characterise the size and optical properties of the QDs. Cell toxicity was investigated using MTT (tetrazolium salt) and glutathione assays and intracellular uptake was imaged using confocal laser scanning microscopy and assessed by Inductively Coupled Plasma Mass Spectrometry (ICP-MS). QDs_TOPO and QDs-capped with BIPs (QDs_BIPs) were successfully synthesised. TEM showed the size and morphology of the QDs to be 5-7 nm with spherical shape. The stabilised QDs_BIPs showed significantly improved dispersion in aqueous solutions compared to QDs_TOPO. The cytotoxicity studies showed very rapid cell death for cells treated by QDs_TOPO and a minor effect on cell viability when QDs_BIPs were applied to the cells. Both EDP- and MDP-modified QDs did not significantly increase the intracellular levels of glutathione. In contrast, IDP-modified QDs substantially increased the intracellular glutathione levels, indicating potential cadmium leakage and inability of IDP to adequately cap and stabilise the QDs. EDP- and MDP-modified QDs were taken up by IGROV-1 (ovarian cancer) cells as shown by fluorescence microscopy, however, the

  18. Armor structures

    DOEpatents

    Chu, Henry Shiu-Hung [Idaho Falls, ID; Lacy, Jeffrey M [Idaho Falls, ID

    2008-04-01

    An armor structure includes first and second layers individually containing a plurality of i-beams. Individual i-beams have a pair of longitudinal flanges interconnected by a longitudinal crosspiece and defining opposing longitudinal channels between the pair of flanges. The i-beams within individual of the first and second layers run parallel. The laterally outermost faces of the flanges of adjacent i-beams face one another. One of the longitudinal channels in each of the first and second layers faces one of the longitudinal channels in the other of the first and second layers. The channels of the first layer run parallel with the channels of the second layer. The flanges of the first and second layers overlap with the crosspieces of the other of the first and second layers, and portions of said flanges are received within the facing channels of the i-beams of the other of the first and second layers.

  19. Digital structural

    USGS Publications Warehouse

    Dohm, J.M.; Anderson, R.C.; Tanaka, K.L.

    1998-01-01

    Magmatic and tectonic activity have both contributed significantly to the surface geology of Mars. Digital structural mapping techniques have now been used to classify and date centers of tectonic activity in the western equatorial region. For example, our results show a center of tectonic activity at Valles Marineris, which may be associated with uplift caused by intrusion. Such evidence may help explain, in part, the development of the large troughs and associated outflow channels and chaotic terrain. We also find a local centre of tectonic activity near the source region of Warrego Valles. Here, we suggest that the valley system may have resulted largely from intrusive-related hydrothermal activity. We hope that this work, together with the current Mars Global Surveyor mission, will lead to a better understanding of the geological processes that shaped the Martian surface.

  20. Mn-doped near-infrared quantum dots as multimodal targeted probes for pancreatic cancer imaging.

    PubMed

    Yong, Ken-Tye

    2009-01-01

    This work presents a novel approach to producing manganese (Mn)-doped quantum dots (Mnd-QDs) emitting in the near-infrared (NIR). Surface functionalization of Mnd-QDs with lysine makes them stably disperse in aqueous media and able to conjugate with targeting molecules. The nanoparticles were structurally and compositionally characterized and maintained a high photoluminescence quantum yield and displayed paramagnetism in water. The receptor-mediated delivery of bioconjugated Mnd-QDs into pancreatic cancer cells was demonstrated using the confocal microscopy technique. Cytotoxicity of Mnd-QDs on live cells has been evaluated. The NIR-emitting characteristic of the QDs has been exploited to acquire whole animal body imaging with high contrast signals. In addition, histological and blood analysis of mice have revealed that no long-term toxic effects arise from MnD-QDs. These studies suggest multimodal Mnd-QDs have the potentials as probes for early pancreatic cancer imaging and detection.

  1. Positively charged and pH self-buffering quantum dots for efficient cellular uptake by charge mediation and monitoring cell membrane permeability

    NASA Astrophysics Data System (ADS)

    Wang, Suhua; Song, Haipeng; Ong, Wei Yi; Han, Ming Yong; Huang, Dejian

    2009-10-01

    Positively charged and pH self-buffering quantum dots (Tren-QDs) were achieved by surface functionalization with tris(2-aminoethyl)amine (Tren) derivatives, which are attached to the inorganic cores of QDs through bidentate chelating of dithiocarbamates. The Tren-QDs exhibit pH buffering capability by absorbing or releasing protons due to the surface polyamine groups as the surrounding pH fluctuates. Such self-buffering capability stabilizes the photoluminescence of the Tren-QDs against acid. The Tren-QDs bear positive charges through protonation of the surface polyamine groups under physiological conditions and the surface positive charges improve their cellular uptake efficiency by charge mediation, which has been demonstrated by BV-2 microglia cells. The photoluminescence of Tren-QDs shows a selective Stern-Volmer response to copper ions and this property has been preliminarily evaluated for investigating the BV-2 cell membrane structure by monitoring the photoluminescence of intracellular Tren-QDs.

  2. Interaction of silicon-based quantum dots with gibel carp liver: oxidative and structural modifications

    NASA Astrophysics Data System (ADS)

    Stanca, Loredana; Petrache, Sorina Nicoleta; Serban, Andreea Iren; Staicu, Andrea Cristina; Sima, Cornelia; Munteanu, Maria Cristina; Zărnescu, Otilia; Dinu, Diana; Dinischiotu, Anca

    2013-05-01

    Quantum dots (QDs) interaction with living organisms is of central interest due to their various biological and medical applications. One of the most important mechanisms proposed for various silicon nanoparticle-mediated toxicity is oxidative stress. We investigated the basic processes of cellular damage by oxidative stress and tissue injury following QD accumulation in the gibel carp liver after intraperitoneal injection of a single dose of 2 mg/kg body weight Si/SiO2 QDs after 1, 3, and 7 days from their administration. QDs gradual accumulation was highlighted by fluorescence microscopy, and subsequent histological changes in the hepatic tissue were noted. After 1 and 3 days, QD-treated fish showed an increased number of macrophage clusters and fibrosis, while hepatocyte basophilia and isolated hepatolytic microlesions were observed only after substantial QDs accumulation in the liver parenchyma, at 7 days after IP injection. Induction of oxidative stress in fish liver was revealed by the formation of malondialdehyde and advanced oxidation protein products, as well as a decrease in protein thiol groups and reduced glutathione levels. The liver enzymatic antioxidant defense was modulated to maintain the redox status in response to the changes initiated by Si/SiO2 QDs. So, catalase and glutathione peroxidase activities were upregulated starting from the first day after injection, while the activity of superoxide dismutase increased only after 7 days. The oxidative damage that still occurred may impair the activity of more sensitive enzymes. A significant inhibition in glucose-6-phosphate dehydrogenase and glutathione-S-transferase activity was noted, while glutathione reductase remained unaltered. Taking into account that the reduced glutathione level had a deep decline and the level of lipid peroxidation products remained highly increased in the time interval we studied, it appears that the liver antioxidant defense of Carassius gibelio does not counteract the

  3. Spectroscopic investigations on the effect of N-Acetyl-L-cysteine-Capped CdTe Quantum Dots on catalase

    NASA Astrophysics Data System (ADS)

    Sun, Haoyu; Yang, Bingjun; Cui, Erqian; Liu, Rutao

    2014-11-01

    Quantum dots (QDs) are recognized as some of the most promising semiconductor nanocrystals in biomedical applications. However, the potential toxicity of QDs has aroused wide public concern. Catalase (CAT) is a common enzyme in animal and plant tissues. For the potential application of QDs in vivo, it is important to investigate the interaction of QDs with CAT. In this work, the effect of N-Acetyl-L-cysteine-Capped CdTe Quantum Dots with fluorescence emission peak at 612 nm (QDs-612) on CAT was investigated by fluorescence, synchronous fluorescence, fluorescence lifetime, ultraviolet-visible (UV-vis) absorption and circular dichroism (CD) techniques. Binding of QDs-612 to CAT caused static quenching of the fluorescence, the change of the secondary structure of CAT and the alteration of the microenvironment of tryptophan residues. The association constants K were determined to be K288K = 7.98 × 105 L mol-1 and K298K = 7.21 × 105 L mol-1. The interaction between QDs-612 and CAT was spontaneous with 1:1 stoichiometry approximately. The CAT activity was also inhibited for the bound QDs-612. This work provides direct evidence about enzyme toxicity of QDs-612 to CAT in vitro and establishes a new strategy to investigate the interaction between enzyme and QDs at a molecular level, which is helpful for clarifying the bioactivities of QDs in vivo.

  4. Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy

    SciTech Connect

    Zielony, E.; Placzek-Popko, E.; Henrykowski, A.; Gumienny, Z.; Kamyczek, P.; Jacak, J.; Nowakowski, P.; Karczewski, G.

    2012-09-15

    Micro-Raman spectroscopy has been applied to investigate the impact of laser irradiation on semiconducting CdTe/ZnTe quantum dots (QDs) structures. A reference sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the p-type GaAs substrate. The Raman spectra have been recorded for different time of a laser exposure and for various laser powers. The spectra for both samples exhibit peak related to the localized longitudinal (LO) ZnTe phonon of a wavenumber equal to 210 cm{sup -1}. For the QD sample, a broad band corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm{sup -1}. With increasing time of a laser beam exposure and laser power, the spectra get dominated by tellurium-related peaks appearing at wavenumbers around 120 cm{sup -1} and 140 cm{sup -1}. Simultaneously, the ZnTe surface undergoes rising damage, with the formation of Te aggregates at the pinhole edge as reveal atomic force microscopy observations. Local temperature of irradiated region has been estimated from the anti-Stokes/Stokes ratio of the Te modes intensity and it was found to be close or exceeding ZnTe melting point. Thus, the laser damage can be explained by the ablation process.

  5. Confinement of gigahertz sound and light in Tamm plasmon resonators

    NASA Astrophysics Data System (ADS)

    Villafañe, V.; Bruchhausen, A. E.; Jusserand, B.; Senellart, P.; Lemaître, A.; Fainstein, A.

    2015-10-01

    We demonstrate theoretically and by pump-probe picosecond acoustics experiments the simultaneous confinement of light and gigahertz sound in Tamm plasmon resonators, formed by depositing a thin layer of Au onto a GaAs/AlGaAs Bragg reflector. The cavity has InGaAs quantum dots (QDs) embedded at the maximum of the confined optical field in the first GaAs layer. The different sound generation and detection mechanisms are theoretically analyzed. It is shown that the Au layer absorption and the resonant excitation of the QDs are the more efficient light-sound transducers for the coupling of near-infrared light with the confined acoustic modes, while the displacement of the interfaces is the main back-action mechanism at these energies. The prospects for the compact realization of optomechanical resonators based on Tamm plasmon cavities are discussed.

  6. Persistent template effect in InAs/GaAs quantum dot bilayers

    SciTech Connect

    Clarke, E.; Howe, P.; Taylor, M.; Spencer, P.; Harbord, E.; Murray, R.; Kadkhodazadeh, S.; McComb, D. W.; Stevens, B. J.; Hogg, R. A.

    2010-06-15

    The dependence of the optical properties of InAs/GaAs quantum dot (QD) bilayers on seed layer growth temperature and second layer InAs coverage is investigated. As the seed layer growth temperature is increased, a low density of large QDs is obtained. This results in a concomitant increase in dot size in the second layer, which extends their emission wavelength, reaching a saturation value of around 1400 nm at room temperature for GaAs-capped bilayers. Capping the second dot layer with InGaAs results in a further extension of the emission wavelength, to 1515 nm at room temperature with a narrow linewidth of 22 meV. Addition of more InAs to high density bilayers does not result in a significant extension of emission wavelength as most additional material migrates to coalesced InAs islands but, in contrast to single layers, a substantial population of regular QDs remains.

  7. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    SciTech Connect

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  8. Effect of MPS concentration on ripening kinetics and structural properties of CdS quantum dots in self-assembled thin films

    NASA Astrophysics Data System (ADS)

    Koc, Kenan

    2015-12-01

    The colloidal CdS quantum dots (QDs) were synthesized with various molar ratios of 3-mercaptopropyltrimethoxysilane (MPS) molecules. The results show that the smaller size of CdS QDs was obtained at the higher molar concentration of MPS. Sol-gel spin coating method was used for deposition of the colloidal nanoparticles on a glass substrate. One pot production method was used to obtain self-assembled thin films of CdS QDs in SiO2 network and the grow kinetics of QDs were investigated. The samples were heat treated at various temperatures to observe the growth of the QDs. The sizes of the QDs were obtained in the range of 2-5 nm depending on the capping agent concentration and heat-treatment temperature. The activation energies for the Ostwald ripening process were found as 38.7, 56.4, 93,1 and 98.6 kJ/mol for the samples containing molar ratio of MPS:Cd = 0.25, 0.50, 1.00 and 2.00 respectively.

  9. Asteroid structure

    NASA Astrophysics Data System (ADS)

    Asphaug, E.

    2014-07-01

    Even before the first space missions to asteroids, in the mid-1990s, it was known that asteroids have weird structures. Photometry indicated complicated shapes, and the pioneering radar investigations by Ostro and colleagues followed by adaptive optics campaigns and flybys showed odd binary forms, and confirmed the common presence of satellites, and indications of highly varying surface roughness. Some asteroids turned out to be dominated by a single major cratering event, while others showed no evidence of a major crater, or perhaps for global crater erasure. The first space mission to orbit an asteroid, NEAR, found a mixture of heavily cratered terrains and geomorphically active 'ponds', and indicated evidence for global seismicity from impact. The next mission to orbit an asteroid, Hayabusa, found what most agree is a rubble pile, with no major craters and an absence of fines. There is to date no direct evidence of asteroid interior geology, other than measurements of bulk density, and inferences made for mass distribution asymmetry based on dynamics, and inferences based on surface lineaments. Interpolating from the surface to the interior is always risky and usually wrong, but of course the answer is important since we are someday destined to require this knowledge in order to divert a hazardous asteroid from impact with the Earth. Even considering the near-subsurface, here we remain as ignorant as we were about the Moon in the early 1960s, whether the surface will swallow us up in dust, or will provide secure landing and anchoring points. Laboratory experimentation in close to zero-G is still in its early stages. Adventures such as mining and colonization will surely have to wait until we better know these things. How do we get from here to there? I will focus on 3 areas of progress: (1) asteroid cratering seismology, where we use the surface craters to understand what is going on inside; (2) numerical modeling of collisions, which predicts the internal

  10. The composition effect on the optical properties of aqueous synthesized Cu-In-S and Zn-Cu-In-S quantum dot nanocrystals.

    PubMed

    Zhang, Butian; Wang, Yucheng; Yang, Chengbin; Hu, Siyi; Gao, Yuan; Zhang, Yiping; Wang, Yue; Demir, Hilmi Volkan; Liu, Liwei; Yong, Ken-Tye

    2015-10-14

    Multiternary quantum dots (QDs), because of the large degree of freedom in their structure and composition, have a wide tunability in their bandgap but also exhibit an increased uncertainty and complexity in their optical properties. In this work, we synthesized the ternary Cu-In-S (CIS) and quaternary Zn-Cu-In-S (ZCIS) QDs with different composition ratios via a facile aqueous route. The CIS QDs show multi-peak photoluminescence with their peak intensity dependent on the Cu : In ratio, which was illustrated using a donor-acceptor pair recombination process. Upon incorporation of Zn into the CIS QDs under similar conditions, the acquired ZCIS QDs exhibit blue-shifted photoluminescence (PL) spectra with an enhanced emission intensity and a narrowed spectral width (∼100 nm). A comparative study reveals that, reducing the Cu : In ratio in the CIS QDs and increasing the Zn content in the alloyed ZCIS QDs are both feasible strategies for bandgap engineering, although the influences on optical properties of the QDs were different. The XRD and EDX spectra revealed that the widening of the bandgap of the ZCIS QDs was correlated with the alloyed nanostructures and the preferential substitution of Cu by Zn. Compared to the Cu : In ratio variation, incorporation of Zn into CIS QDs is an effective strategy to achieve a more homogeneous absorption band and a wide range of emission wavelength tunability. After ZnS shell coating, the ZCIS/ZnS QDs show a further enhanced PL intensity with a prolonged fluorescence lifetime. Unlike CIS QDs, the blue shift in PL upon the shell growth was not pronounced for ZCIS QDs, for which a surface reconstruction mechanism was proposed and discussed. Finally, the as-prepared ZCIS/ZnS QDs were employed for in vitro cell imaging and exhibited good biocompatibility to macrophage cells. PMID:26349413

  11. Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector.

    PubMed

    Xia, Hui; Li, Tian-Xin; Tang, Heng-Jing; Zhu, Liang; Li, Xue; Gong, Hai-Mei; Lu, Wei

    2016-01-01

    Electronic layout, such as distributions of charge carriers and electric field, in PN junction is determinant for the photovoltaic devices to realize their functionality. Considerable efforts have been dedicated to the carrier profiling of this specific region with Scanning Probe Microscope, yet reliable analysis was impeded by the difficulty in resolving carriers with high mobility and the unclear surface effect, particularly on compound semiconductors. Here we realize nanometer Scanning Capacitance Microscopic study on the cross-section of InGaAs/InP photodetectors with the featured dC/dV layout of PN junction unveiled for the first time. It enables us to probe the photo-excited minority carriers in junction region and diagnose the performance deficiency of the diode devices. This work provides an illuminating insight into the PN junction for assessing its basic capability of harvesting photo-carriers as well as blocking leakage current in nanoscopic scale.

  12. Production data on 0.55 eV InGaAs thermophotovoltaic cells

    SciTech Connect

    Wojtzuk, S.; Colter, P.; Charache, G.; Campbell, B.

    1996-05-01

    Low bandgap 0.55 eV (2.25 {micro}m cutoff wavelength) indium gallium arsenide (In{sub 0.72}Ga{sub 0.28}As) thermophotovoltaic (TPV) cells use much more of the long wavelength energy emitted from low temperature (< 1,200 C) thermal sources than either Si or GaSb cells. Data are presented on a statistically significant number (2,500) of these TPV cells, indicating the performance obtainable in large numbers of cells. This data should be useful in the design and modeling of TPV system performance. At 1.2 A/cm{sup 2} short-circuit current, an average open-circuit voltage of 283 mV is obtained with a 60% fill factor. The peak external quantum efficiency for uncoated cells is 65% and is over 50% from 1.1 to 2.2 {micro}m. Internal quantum efficiency is over 76% in this range assuming an estimated 34% reflectance loss.

  13. Spin noise of electrons and holes in (In,Ga)As quantum dots: Experiment and theory

    NASA Astrophysics Data System (ADS)

    Glasenapp, Ph.; Smirnov, D. S.; Greilich, A.; Hackmann, J.; Glazov, M. M.; Anders, F. B.; Bayer, M.

    2016-05-01

    The spin fluctuations of electron and hole doped self-assembled quantum dot ensembles are measured optically in the low-intensity limit of a probe laser for absence and presence of longitudinal or transverse magnetic fields. The experimental results are modeled by two complementary approaches based either on a semiclassical or quantum mechanical description. This allows us to characterize the hyperfine interaction of electron and hole spins with the surrounding bath of nuclei on time scales covering several orders of magnitude. Our results demonstrate (i) the intrinsic precession of the electron spin fluctuations around the effective Overhauser field caused by the host lattice nuclear spins, (ii) the comparably long time scales for electron and hole spin decoherence, as well as (iii) the dramatic enhancement of the spin lifetimes induced by a longitudinal magnetic field due to the decoupling of nuclear and charge carrier spins.

  14. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Farrell, Alan C.; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M.; Huffaker, Diana L.

    2015-12-01

    Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III-V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure.

  15. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes.

    PubMed

    Farrell, Alan C; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M; Huffaker, Diana L

    2015-01-01

    Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III-V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure. PMID:26627932

  16. Characterization of spin-orbit fields in InGaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Henn, T.; Czornomaz, L.; Salis, G.

    2016-10-01

    Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the spatial overlap between pump and probe pulses, a diffusive velocity is imprinted on the measured electron spins and a spin precession in the spin-orbit field is measured. A Rashba symmetry of the spin-orbit interaction is determined. By comparing the spatial precession frequency gradient with the spin decay rate, an upper limit for the Rashba coefficients α of 2 × 10-12 eVm is estimated.

  17. Performance of four-stage thermoelectric cooler for extended wavelength InGaAs detectors

    NASA Astrophysics Data System (ADS)

    Mo, De-feng; Yang, Li-yi; Liu, Da-fu; Xu, Qin-fei; Li, Tao; Li, Xue

    2015-04-01

    Experimental setup for evaluating four-stage thermoelectric cooler's performance was designed. Effects of input power, heat dissipation condition and heat load on the temperature difference (ΔT) of four-stage thermoelectric coolers' hot and cold faces were obtained experimentally. The result shows that, the ΔT increases as the input power increases. A linear relationship exists between input current and feedback voltage. In different cooling conditions, the ΔT of thermoelectric cooler (TEC) increases with the temperature of hot face. As the temperature increasing on hot face is 1K, the ΔT increasing of TEC can be about 0.5K. Meanwhile, the power consumption of TEC also increases slightly. Water condensation can be prevented in either dry nitrogen environment or vacuum environment, but the vacuum level has great influence to the ΔT, especially in low operation temperature. The better the vacuum level is, the smaller the convection heat loss has. When the operation temperature of focal plane array (FPA) is lower than 220K, it is prior to use vacuum packaging. Considering the Joule-heat of readout circuit and the heat loss of wire conduction, the minimum working temperature of FPA can reach below 200 K when the temperature of the hot face is 285K. And the coefficient of performance (COP) of TEC can increase sharply from 0.8% to 4% when the controlled operation temperature is 220K rather than 200K.

  18. Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector

    PubMed Central

    Xia, Hui; Li, Tian-Xin; Tang, Heng-Jing; Zhu, Liang; Li, Xue; Gong, Hai-Mei; Lu, Wei

    2016-01-01

    Electronic layout, such as distributions of charge carriers and electric field, in PN junction is determinant for the photovoltaic devices to realize their functionality. Considerable efforts have been dedicated to the carrier profiling of this specific region with Scanning Probe Microscope, yet reliable analysis was impeded by the difficulty in resolving carriers with high mobility and the unclear surface effect, particularly on compound semiconductors. Here we realize nanometer Scanning Capacitance Microscopic study on the cross-section of InGaAs/InP photodetctors with the featured dC/dV layout of PN junction unveiled for the first time. It enables us to probe the photo-excited minority carriers in junction region and diagnose the performance deficiency of the diode devices. This work provides an illuminating insight into the PN junction for assessing its basic capability of harvesting photo-carriers as well as blocking leakage current in nanoscopic scale. PMID:26892069

  19. Resonant intersubband plasmon induced current in InGaAs quantum wells on GaAs

    SciTech Connect

    Holzbauer, Martin Klang, Pavel; Detz, Hermann; Maxwell Andrews, Aaron; Strasser, Gottfried; Gornik, Erich; Bakshi, Pradip

    2014-03-24

    We present measurements of the current enhancement due to the coupling of two intersubband plasmons in In{sub 0.05}Ga{sub 0.95}As quantum wells. With changing bias, an emissive and an absorptive intersubband plasmon mode cross attractively and trapped electrons in the ground state gain enough energy from the plasma wave to be lifted up to the second subband, where they can contribute to the current. This effect can be directly observed as an increase of 33% in the current. A magnetic field applied parallel to the growth direction allows a control of the strength of the intersubband plasmon coupling up to a quenching.

  20. Toward a 1550 nm InGaAs photoconductive switch for terahertz generation.

    PubMed

    Williams, Kimani K; Taylor, Z D; Suen, J Y; Lu, Hong; Singh, R S; Gossard, A C; Brown, E R

    2009-10-15

    We report a terahertz (THz) photoconductive switch made from a composite of metal ErAs nanoparticles embedded in In(0.53)Ga(0.47)As and coupled to a square spiral antenna. The THz output power was measured in a 77 K cryostat by using a standard hyperhemisphere-lens package, a Golay cell outside the cryostat, and a quasi-optical filter bank for spot frequency spectral measurements. Results indicate an average output power of approximately 12 microW at 22 V bias using 140 mW of optical pump power from a subpicosecond fiber mode-locked laser. In addition, the THz spectra displayed invariance to bias voltage despite operating near impact ionization.

  1. Shot noise at the quantum point contact in InGaAs heterostructure

    SciTech Connect

    Nishihara, Yoshitaka; Nakamura, Shuji; Ono, Teruo; Kobayashi, Kensuke; Kohda, Makoto; Nitta, Junsaku

    2013-12-04

    We study the shot noise at a quantum point contact (QPC) fabricated in an InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. Shot noise suppression is observed at the conductance plateau of N(2e{sup 2}/h) (N = 4,5,and 6), which indicates the coherent quantized channel formation in the QPC. The electron heating effect generated at the QPC explains the deviation of the observed Fano factor from the theory.

  2. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

    PubMed Central

    Farrell, Alan C.; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M.; Huffaker, Diana L.

    2015-01-01

    Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III–V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure. PMID:26627932

  3. Room temperature 640x512 pixel near-infrared InGaAs focal plane array

    NASA Astrophysics Data System (ADS)

    Ettenberg, Martin H.; Lange, Michael J.; O'Grady, Mathew T.; Vermaak, Jacobus S.; Cohen, Marshall J.; Olsen, Gregory H.

    2000-07-01

    We report on the performance of a 640 X 512 pixel, indium gallium arsenide (In53Ga47As) focal plane array (FPA). The device has 25 micrometer pixels and represents the largest and finest pitched imager demonstrated in this material system. The device is sensitive to the 0.9 micrometer-to-1.7 micrometer short wave infrared band and features a room temperature detectivity, D*, greater than 5 X 1012 cm- (root)Hz/W with greater than 98% of the pixels operable. The performance of the In53Ga47As photodiode array is such that at room temperature the focal plane array is read noise- limited. The presentation will include a description of the FPA fabrication and assembly as well as characterization of dark current versus temperature, spectral response, and resolution. The implications of these results to applications such as passive night vision imaging, active illumination, covert surveillance, target designation using eye safe lasers, and target acquisition and tracking will be discussed.

  4. All-optical tomography of electron spins in (In,Ga)As quantum dots

    NASA Astrophysics Data System (ADS)

    Varwig, S.; René, A.; Economou, Sophia E.; Greilich, A.; Yakovlev, D. R.; Reuter, D.; Wieck, A. D.; Reinecke, T. L.; Bayer, M.

    2014-02-01

    We demonstrate the basic features of an all-optical spin tomography on picosecond time scale. The magnetization vector associated with a mode-locked electron spin ensemble in singly charged quantum dots is traced by ellipticity measurements using picosecond laser pulses. After optical orientation the spins precess about a perpendicular magnetic field. By comparing the dynamics of two interacting ensembles with the dynamics of a single ensemble we find buildup of a spin component along the magnetic field in the two-ensemble case. This component arises from a Heisenberg-like spin-spin interaction.

  5. Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector.

    PubMed

    Xia, Hui; Li, Tian-Xin; Tang, Heng-Jing; Zhu, Liang; Li, Xue; Gong, Hai-Mei; Lu, Wei

    2016-01-01

    Electronic layout, such as distributions of charge carriers and electric field, in PN junction is determinant for the photovoltaic devices to realize their functionality. Considerable efforts have been dedicated to the carrier profiling of this specific region with Scanning Probe Microscope, yet reliable analysis was impeded by the difficulty in resolving carriers with high mobility and the unclear surface effect, particularly on compound semiconductors. Here we realize nanometer Scanning Capacitance Microscopic study on the cross-section of InGaAs/InP photodetectors with the featured dC/dV layout of PN junction unveiled for the first time. It enables us to probe the photo-excited minority carriers in junction region and diagnose the performance deficiency of the diode devices. This work provides an illuminating insight into the PN junction for assessing its basic capability of harvesting photo-carriers as well as blocking leakage current in nanoscopic scale. PMID:26892069

  6. Low-temperature-grown InGaAs quantum wells for optical device applications

    NASA Astrophysics Data System (ADS)

    Juodawlkis, Paul William

    1999-11-01

    The large optical absorption and carrier-induced nonlinearities of semiconductor materials are useful for optical signal processing applications. For absorptive devices operating at ultrafast data rates (>100 Gb/s) or high optical intensities, it is necessary to reduce the intrinsic photo-excited carrier removal time. One method of achieving this reduction is to increase the nonradiative recombination rate through the controlled introduction of defects. In this thesis, we explore the use of low-temperature molecular-beam epitaxy (MBE) to introduce nonradiative recombination centers into InGaAs-based quantum-wells (QWs). The objectives of the thesis are: (i)to improve the understanding of the optoelectronic properties of low-temperature-grown (LTG) InGaAs/InAlAs QWs, and (ii)to assess the feasibility of using these materials for optical device applications in the 1.5-μm wavelength region. Time-resolved differential transmission measurements reveal that the nonlinear absorption recovery time in InGaAs/InAlAs QWs can be reduced from >100 ps to 0.6 ps through the combination of low-temperature growth (~250°C) and beryllium (Be) doping. The bandedge absorption slope and the nonlinear absorption cross- section are only diminished by factors of 2 to 3 relative to QWs grown at standard temperature (~500°C). The Be doping dependence of the recovery time and the residual electron density in the LTG-QWs can be mainly attributed to impurity-related compensation. Be doping also maintains the ultrafast recovery following thermal anneal. The recovery response results from fast electron- trapping followed by slow (>100 ps) trapped- electron/free-hole recombination. Detailed simulations of the nonlinear absorption saturation and recovery processes agree quantitatively with measured data and substantiate the importance of the photo-excitation wavelength on the observed recovery response. The absorption saturation model includes the competition between band-filling and band-gap renormalization, and it accounts for unequal electron and hole densities. Shockley-Read-Hall (SRH) rate equations are used to describe the dynamics of defect-related carrier-trapping and recombination. The model reveals that hole-induced band-gap renormalization can explain photo-induced absorption commonly observed in defect- engineered semiconductors. The performance of electroabsorption modulators fabricated using LTG-InGaAs/InAlAs QWs is greatly diminished by the ionized defects associated with LTG and Be doping. The absorption nonlinearity of the LTG-QWs is found to be sufficient to mode-lock a fiber laser that generates square, noise-like pulses.

  7. Spectral and Luminescence Properties of Sols and Coatings Containing CdS/ZnS QDs and Polyvinylpyrrolidone

    NASA Astrophysics Data System (ADS)

    Evstrop'ev, K. S.; Gatchin, Yu. A.; Evstrop'ev, S. K.; Dukel'skii, K. V.; Kislyakov, I. M.; Pegasova, N. A.; Bagrov, I. V.

    2016-03-01

    Spectral and luminescence properties of sols and composition coatings containing cadmium and zinc sulfides and high-molecular polyvinylpyrrolidone have been studied. It is shown that the absorption spectra of colloidal solutions in the UV spectral range are determined by the quantum-confinement effect and exhibit a dependence of the absorption edge on the size of cadmium sulfide nanocrystals. The size of forming particles of metal sulfides has been found to decrease with an increase in the relative content of polyvinylpyrrolidone. It is shown that the order of mixing of the initial components when synthesizing sols also determines the difference in the size of forming particles and their spectral properties.

  8. Structural Biology Fact Sheet

    MedlinePlus

    ... Home > Science Education > Structural Biology Fact Sheet Structural Biology Fact Sheet Tagline (Optional) Middle/Main Content Area What is structural biology? Structural biology is a field of science focused ...

  9. Structured Data in Structural Analysis Software

    NASA Technical Reports Server (NTRS)

    Kunz, Donald L.; Hopkins, Stewart

    1987-01-01

    This paper discusses the use of computer data structures in finite-element structural analysis programs. A number of data structure types that have been shown to be useful in such programs are introduced and described. A simple finite-element model is used to demonstrate how the given set of data structure types naturally lend themselves to developing software for the model. Different methods of implementing data structures in the context of a program are discussed.

  10. Magnetic multilayer structure

    DOEpatents

    Herget, Philipp; O'Sullivan, Eugene J.; Romankiw, Lubomyr T.; Wang, Naigang; Webb, Bucknell C.

    2016-07-05

    A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

  11. Fabrication of Single-Photon Sources by Use of Pyramidal Quantum-Dot Microcavities

    NASA Astrophysics Data System (ADS)

    Rülke, Daniel; Reinheimer, C.; Schaadt, D. M.; Kalt, H.; Hetterich, M.

    In recent years the interest in single-photon emitters for quantum-optical applications is strongly increasing. For this purpose, we have investigated In(Ga)As quantum-dots (QDs) embedded in reversed pyramidal GaAs microcavities (Fig. 52.1a). Even though it has been shown recently, that such cavities can act as high-Q optical resonators [1], our focus has been on the directional radiation of the QD emission due to reflection at the facets of the reversed pyramids. With QDs embedded close to the vertex of the four facets and a base angle adaptable between 35° and 55° the pyramids can be perceived as a kind of retroreflector. Since the QD layer is inserted near the tip of the predicted reversed pyramid during molecular-beam epitaxial (MBE) growth, the average number of QDs inside the cavity can be reduced to one, depending on the size of the pyramid and density of QDs. The pyramidal cavities are shaped after MBE growth by a wet-chemical etching process with a solution of H3PO4, H2O2 and H2O [2, 3].

  12. Si quantum dots and different aspects of applications

    NASA Astrophysics Data System (ADS)

    Torchynska, Tetyana V.

    2011-09-01

    This paper presents briefly the history of the study of Si quantum dot (QDs) structures and the advances of different applications of Si quantum dots (QDs) in quantum electronics, such as: Si QD light emitting diodes, Si QD solar cells and memory structures, Si QD based one electron devices and double QD structures for spintronics [1].

  13. Computational structural mechanics for engine structures

    NASA Technical Reports Server (NTRS)

    Chamis, C. C.

    1989-01-01

    The computational structural mechanics (CSM) program at Lewis encompasses: (1) fundamental aspects for formulating and solving structural mechanics problems, and (2) development of integrated software systems to computationally simulate the performance/durability/life of engine structures. It is structured to mainly supplement, complement, and whenever possible replace, costly experimental efforts which are unavoidable during engineering research and development programs. Specific objectives include: investigate unique advantages of parallel and multiprocesses for: reformulating/solving structural mechanics and formulating/solving multidisciplinary mechanics and develop integrated structural system computational simulators for: predicting structural performances, evaluating newly developed methods, and for identifying and prioritizing improved/missing methods needed. Herein the CSM program is summarized with emphasis on the Engine Structures Computational Simulator (ESCS). Typical results obtained using ESCS are described to illustrate its versatility.

  14. Long wavelength (>1.55 {mu}m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

    SciTech Connect

    Urbanczyk, A.; Keizer, J. G.; Koenraad, P. M.; Noetzel, R.

    2013-02-18

    We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 {mu}m. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs.

  15. Facile synthesis of water-soluble ZnS quantum dots with strong luminescent emission and biocompatibility

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Liu, Yingbo; Sun, Shuqing

    2013-10-01

    ZnS quantum dots (QDs) are among the most promising emerging fluorescent materials for biolabeling. High-quality colloidal ZnS QDs were synthesized via a new facile chemical precipitation method using the mixture of ethylene glycol (EG) and water as the solvent. The phase structure and morphology of the ZnS QDs were characterized by X-ray powder diffraction and high resolution transmission electron microscopy. The synthesized ZnS QDs have a cubic zinc blende structure with monodispered and small particles. ZnS QDs easily dispersed in water to form stable and clear colloids and the strong tunable trap state emissions from 452 to 516 nm were achieved by varying the reaction time. The hemolysis assay was performed to evaluate the biocompatibility of the ZnS QDs.

  16. Tunable Fabrication of Molybdenum Disulfide Quantum Dots for Intracellular MicroRNA Detection and Multiphoton Bioimaging.

    PubMed

    Dai, Wenhao; Dong, Haifeng; Fugetsu, Bunshi; Cao, Yu; Lu, Huiting; Ma, Xinlei; Zhang, Xueji

    2015-09-01

    Molybdenum disulfide (MoS2 ) quantum dots (QDs) (size <10 nm) possess attractive new properties due to the quantum confinement and edge effects as graphene QDs. However, the synthesis and application of MoS2 QDs has not been investigated in great detail. Here, a facile and efficient approach for synthesis of controllable-size MoS2 QDs with excellent photoluminescence (PL) by using a sulfuric acid-assisted ultrasonic route is developed for this investigation. Various MoS2 structures including monolayer MoS2 flake, nanoporous MoS2 , and MoS2 QDs can be yielded by simply controlling the ultrasonic durations. Comprehensive microscopic and spectroscopic tools demonstrate that the MoS2 QDs have uniform lateral size and possess excellent excitation-independent blue PL. The as-generated MoS2 QDs show high quantum yield of 9.65%, long fluorescence lifetime of 4.66 ns, and good fluorescent stability over broad pH values from 4 to 10. Given the good intrinsic optical properties and large surface area combined with excellent physiological stability and biocompatibility, a MoS2 QDs-based intracellular microRNA imaging analysis system is successfully constructed. Importantly, the MoS2 QDs show good performance as multiphoton bioimaging labeling. The proposed synthesis strategy paves a new way for facile and efficient preparing MoS2 QDs with tunable-size for biomedical imaging and optoelectronic devices application.

  17. Interaction of the CdSe quantum dots with plant cell walls.

    PubMed

    Djikanović, Daniela; Kalauzi, Aleksandar; Jeremić, Milorad; Xu, Jianmin; Mićić, Miodrag; Whyte, Jeffrey D; Leblanc, Roger M; Radotić, Ksenija

    2012-03-01

    There is an increasing application of quantum dots (QDs) in plant science, as markers for the cells or their cell walls (CWs). In a plant cell the CW is a first target place for external agents. We studied interaction of CdSe QDs with CWs isolated from a conifer -Picea omorika (Panč) Purkynĕ branch. Binding of CdSe QDs was followed by using fluorescence microscopy, fluorescence and FT-IR spectroscopy. The aim of the study was to see whether the QDs induce structural changes in the CW, as well as to find out which kind of interactions between QDs and CWs occur and to which particular constituent polymers QDs preferably bind. The isolated CW is an appropriate object for study of the interactions with nanoparticles. The results show that in the CW, CdSe predominantly binds to cellulose, via OH groups and to lignin, via the conjugated CC/C-C chains. The differences in interaction of wet and dry CWs with QDs/chloroform were also studied. In the reaction of the dry CW sample with QDs/chloroform, hydrophobic interactions are dominant. When water was added after QDs/chloroform, hydrophilic interactions enable a partial reconstruction of the CC chains. The results have an implication on the use of the QDs in plant bio-imaging.

  18. Characterization of cellulose membranes modified with luminescent silicon quantum dots nanoparticles.

    PubMed

    Campos, B B; Gelde, L; Algarra, M; Esteves da Silva, J C G; Vázquez, M I; Benavente, J

    2016-10-20

    A highly hydrophilic planar membrane fabricated with regenerated cellulose (RC-4 membrane), a biocompatible polymer, was modified by inclusion of water-soluble silicon quantum dot nanoparticles (SiQDs). Both bare SiQDs and SiQDs coated with a PAMAM-OH dendrimer were employed in order to obtain luminescent and thermally stable membrane systems (RC-4/SiQDs and RC-4/SiQDs-PAMAM-OH membranes). Original and SiQDs-modified membranes were characterized by fluorescence spectroscopy (steady and confocal), derivative thermogravimetric analysis and impedance spectroscopy measurements. According to these results, both SiQDs-regenerated cellulose composite membranes present luminescent character as well as higher thermal resistance and conductivity than the original sample, although the dendrimer coverage of the SiQDs might partially shield such effects. Moreover, the permanence of SiQDs nanoparticles in the structure of the cellulosic support in aqueous environments and their effect on diffusive transport were determined by water uptake as well as by membrane potential measurements at different concentrations of a model electrolyte (KCl). These results demonstrate the possible use of these stable nano-engineered membranes, which are based on SiQDs nanoparticles, in electrochemical devices under flow conditions. PMID:27474642

  19. Controllable blinking-to-nonblinking behavior of aqueous CdTeS Alloyed quantum dots.

    PubMed

    Dong, Chaoqing; Liu, Heng; Zhang, Aidi; Ren, Jicun

    2014-02-10

    Semiconductor quantum dots (QDs) are very important optical nanomaterials with a wide range of potential applications. However, the blinking of single QDs is an intrinsic drawback for some biological and photoelectric applications based on single-dot emission. In this work, we systematically investigated the effects of certain synthetic conditions on the blinking behavior of aqueous CdTeS alloyed QDs, and observed that blinking behaviors of QDs were able to be controlled by the structure and concentration of the thiol compounds that were used as surface ligands. In optimal conditions, completely nonblinking QDs were prepared using certain thiol ligands as stabilizers in aqueous phase. The suppressed blinking mechanism was mainly attributed to elimination of QDs surface traps by coordination of thiol ligands with vacant Cd atoms, formation of appropriate CdS coating on QDs, and controlling the growth dynamics of QDs. Nonblinking QDs show high quantum yield, small size, and good solubility, and will be applied to some fields that were previously limited by blinking of traditional QDs.

  20. Characterization of cellulose membranes modified with luminescent silicon quantum dots nanoparticles.

    PubMed

    Campos, B B; Gelde, L; Algarra, M; Esteves da Silva, J C G; Vázquez, M I; Benavente, J

    2016-10-20

    A highly hydrophilic planar membrane fabricated with regenerated cellulose (RC-4 membrane), a biocompatible polymer, was modified by inclusion of water-soluble silicon quantum dot nanoparticles (SiQDs). Both bare SiQDs and SiQDs coated with a PAMAM-OH dendrimer were employed in order to obtain luminescent and thermally stable membrane systems (RC-4/SiQDs and RC-4/SiQDs-PAMAM-OH membranes). Original and SiQDs-modified membranes were characterized by fluorescence spectroscopy (steady and confocal), derivative thermogravimetric analysis and impedance spectroscopy measurements. According to these results, both SiQDs-regenerated cellulose composite membranes present luminescent character as well as higher thermal resistance and conductivity than the original sample, although the dendrimer coverage of the SiQDs might partially shield such effects. Moreover, the permanence of SiQDs nanoparticles in the structure of the cellulosic support in aqueous environments and their effect on diffusive transport were determined by water uptake as well as by membrane potential measurements at different concentrations of a model electrolyte (KCl). These results demonstrate the possible use of these stable nano-engineered membranes, which are based on SiQDs nanoparticles, in electrochemical devices under flow conditions.

  1. The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots.

    PubMed

    Askari, Sadegh; Svrcek, Vladmir; Maguire, Paul; Mariotti, Davide

    2015-12-22

    Hydrogenation in amorphous silicon quantum dots (QDs) has a dramatic impact on the corresponding optical properties and band energy structure, leading to a quantum-confined composite material with unique characteristics. The synthesis of a-Si:H QDs is demonstrated with an atmospheric-pressure plasma process, which allows for accurate control of a highly chemically reactive non-equilibrium environment with temperatures well below the crystallization temperature of Si QDs.

  2. Intrinsic high magnetism in SnO{sub 2} quantum dots

    SciTech Connect

    Venkataramana, Bonu Das, A. Dhara, S.; Tyagi, A. K.; Sardar, Manas

    2014-04-24

    High magnetic moment was observed in SnO{sub 2} quantum dots (QDs) which were prepared by a soft chemical method. SnO{sub 2} QDs were characterized for morphological, structural and optical properties using high resolution tunneling electron microscopy and photoluminescence (PL) spectroscopy, respectively. Magnetism occurred in QDs SnO{sub 2} due to dominant oxygen defects, were studied using PL measurements.

  3. Nonlinear Structural Analysis

    NASA Technical Reports Server (NTRS)

    1984-01-01

    Nonlinear structural analysis techniques for engine structures and components are addressed. The finite element method and boundary element method are discussed in terms of stress and structural analyses of shells, plates, and laminates.

  4. Variably porous structures

    SciTech Connect

    Braun, Paul V.; Yu, Xindi

    2011-01-18

    A method of making a monolithic porous structure, comprises electrodepositing a material on a template; removing the template from the material to form a monolithic porous structure comprising the material; and electropolishing the monolithic porous structure.

  5. CdTe quantum dots: aqueous phase synthesis, stability studies and protein conjugation for development of biosensors

    NASA Astrophysics Data System (ADS)

    Borse, Vivek; Sadawana, Mayur; Srivastava, Rohit

    2016-04-01

    Synthesis of quantum dots (QDs) in aqueous medium is advantageous as compared to the organic solvent mediated synthesis, as the aqueous synthesis is less toxic, reagent effective, easily reproducible and importantly, synthesized QDs have biological compatibility. The QDs should be aqueous in nature for use in cell imaging, drug labeling, tracking and delivery. Structural modifications are necessary to enable their use in biosensing application. In this work, mercaptopropionic acid capped cadmium telluride QDs (MPA-CdTe QDs) were synthesized by hydrothermal method and characterized by various techniques. Water and various biochemical buffers were used to study the fluorescence intensity stability of the QDs at different physicochemical conditions. QDs stored in 4° C showed excellent stability of fluorescence intensity values as compared to the samples stored at room temperature. Staphylococcal protein A (SPA) was conjugated with the QDs (SPA-QDs) and characterized using UV and fluorescence spectroscopy, zeta potential, HRTEM, FTIR, and AFM. Blue shift was observed in the fluorescence emission spectra that may be due to reduction in the surface charge as carboxyl groups on QDs were replaced by amino groups of SPA. This SPA conjugated to QDs enables binding of the C-terminal of antibodies on its surface allowing N-terminal binding site remain free to bind with antigenic biomarkers. Thus, the biosensor i.e. antibody bound on SPA-QDs would bind to the antigenic biomarkers in sample and the detection system could be developed. As QDs have better fluorescence properties than organic dyes, this biosensor will provide high sensitivity and quantitative capability in diagnostics.

  6. Intelligent adaptive structures

    NASA Technical Reports Server (NTRS)

    Wada, Ben K.

    1990-01-01

    'Intelligent Adaptive Structures' (IAS) refers to structural systems whose geometric and intrinsic structural characteristics can be automatically changed to meet mission requirements with changing operational scenarios. An IAS is composed of actuators, sensors, and a control logic; these are integrated in a distributed fashion within the elements of the structure. The IAS concepts thus far developed for space antennas and other precision structures should be applicable to civil, marine, automotive, and aeronautical structural systems.

  7. Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs

    SciTech Connect

    Kumah, Divine P; Wu, J H; Husseini, Naji S; Dasika, V D; Goldman, Rachel S; Yacoby, Yizhak; Clarke, Roy

    2011-01-01

    We report on the use of a direct x-ray phase retrieval method, coherent Bragg rod analysis, to characterize self-assembled InAs quantum dots (QDs) grown epitaxially on GaAs substrates. Electron density maps obtained close to the x-ray absorption edges of the constituent elements are compared to deconvolute composition and atomic spacing information. Our measurements show no evidence of a wetting layer and reveal bowing of the atomic layers throughout the QD, extending from the QD-substrate interface. This leads to a half-layer stacking shift which may act to partially decouple the QDs electronically from the substrate.

  8. Protein structure mining using a structural alphabet.

    PubMed

    Tyagi, M; de Brevern, A G; Srinivasan, N; Offmann, B

    2008-05-01

    We present a comprehensive evaluation of a new structure mining method called PB-ALIGN. It is based on the encoding of protein structure as 1D sequence of a combination of 16 short structural motifs or protein blocks (PBs). PBs are short motifs capable of representing most of the local structural features of a protein backbone. Using derived PB substitution matrix and simple dynamic programming algorithm, PB sequences are aligned the same way amino acid sequences to yield structure alignment. PBs are short motifs capable of representing most of the local structural features of a protein backbone. Alignment of these local features as sequence of symbols enables fast detection of structural similarities between two proteins. Ability of the method to characterize and align regions beyond regular secondary structures, for example, N and C caps of helix and loops connecting regular structures, puts it a step ahead of existing methods, which strongly rely on secondary structure elements. PB-ALIGN achieved efficiency of 85% in extracting true fold from a large database of 7259 SCOP domains and was successful in 82% cases to identify true super-family members. On comparison to 13 existing structure comparison/mining methods, PB-ALIGN emerged as the best on general ability test dataset and was at par with methods like YAKUSA and CE on nontrivial test dataset. Furthermore, the proposed method performed well when compared to flexible structure alignment method like FATCAT and outperforms in processing speed (less than 45 s per database scan). This work also establishes a reliable cut-off value for the demarcation of similar folds. It finally shows that global alignment scores of unrelated structures using PBs follow an extreme value distribution. PB-ALIGN is freely available on web server called Protein Block Expert (PBE) at http://bioinformatics.univ-reunion.fr/PBE/. PMID:18004784

  9. The fluorescent interactions between amphiphilic chitosan derivatives and water-soluble quantum dots

    NASA Astrophysics Data System (ADS)

    Fei, Xuening; Yu, Miaozhuo; Zhang, Baolian; Cao, Lingyun; Yu, Lu; Jia, Guozhi; Zhou, Jianguo

    2016-01-01

    The LCC-CdTe quantum dots (QDs) hybrid was fabricated by mixing the N-lauryl-N, O-carboxymethyl chitosan (LCC) micelle with water-soluble CdTe QDs in an aqueous solution via hydrophobic forces and the electronic attraction. The structures of LCC and LCC-CdTe QDs hybrid were determined by differential scanning calorimetry (DSC), Fourier transform infrared (FT-IR) spectroscopy and transmission electron microscopy (TEM). The results showed that the lauryl and carboxymethyl were successfully grafted to chitosan oligosaccharide (CSO), and a number of CdTe QDs were encapsulated by LCC micelle to form a core/shell structure. The tested results of the fluorescent characteristics of LCC, CdTe QDs and LCC-CdTe QDs hybrid showed that there were some obvious fluorescent interactions between LCC and CdTe QDs. Meanwhile, with the change in LCC space structure, the fluorescent interactions between LCC and QDs showed different fluorescent characteristics. The QDs fluorescent (FL) intensity increased first and then decreased to almost quenching, while LCC FL intensity decreased continually.

  10. Effects of capping on GaN quantum dots deposited on Al{sub 0.5}Ga{sub 0.5}N by molecular beam epitaxy

    SciTech Connect

    Korytov, M.; Benaissa, M.; Huault, T.; Neisius, T.

    2009-04-06

    The impact of the capping process on the structural and morphological properties of GaN quantum dots (QDs) grown on fully relaxed Al{sub 0.5}Ga{sub 0.5}N templates was studied by transmission electron microscopy. A morphological transition between the surface QDs, which have a pyramidal shape, and the buried ones, which have a truncated pyramid shape, is evidenced. This shape evolution is accompanied by a volume change: buried QDs are bigger than surface ones. Furthermore a phase separation into Al{sub 0.5}Ga{sub 0.5}N barriers was observed in the close vicinity of buried QDs. As a result, the buried QDs were found to be connected with the nearest neighbors by thin Ga-rich zones, whereas Al-rich zones are situated above the QDs.

  11. Spontaneous emission of semiconductor quantum dots in inverse opal SiO2 photonic crystals at different temperatures.

    PubMed

    Yang, Peng; Yang, Yingshu; Wang, Yinghui; Gao, Jiechao; Sui, Ning; Chi, Xiaochun; Zou, Lu; Zhang, Han-Zhuang

    2016-02-01

    The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Finally, inverse opal SiO2 PCs suppressed the nonlinear PL enhancement of CdSe QDs in PCs excited by a continuum laser and effectively modulated the PL characteristics of CdSe QDs in PCs at high temperatures in comparison with that of CdSe QDs out of PCs. The final results are of benefit in further understanding the role of inverse opal PCs on the PL characteristics of QDs. PMID:26781789

  12. Spontaneous emission of semiconductor quantum dots in inverse opal SiO2 photonic crystals at different temperatures.

    PubMed

    Yang, Peng; Yang, Yingshu; Wang, Yinghui; Gao, Jiechao; Sui, Ning; Chi, Xiaochun; Zou, Lu; Zhang, Han-Zhuang

    2016-02-01

    The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Finally, inverse opal SiO2 PCs suppressed the nonlinear PL enhancement of CdSe QDs in PCs excited by a continuum laser and effectively modulated the PL characteristics of CdSe QDs in PCs at high temperatures in comparison with that of CdSe QDs out of PCs. The final results are of benefit in further understanding the role of inverse opal PCs on the PL characteristics of QDs.

  13. Excellent dynamic stability under saturated salt solution for aqueous quantum dots capped by multi-branched ligands

    NASA Astrophysics Data System (ADS)

    Xu, Jingkun; Xu, Shuhong; Lv, Changgui; Wang, Chunlei; Cui, Yiping

    2016-09-01

    Preparing quantum dots (QDs) with strong stability against salts is extremely important in some environments with ultrahigh salts concentration, such as the oil exploitation, wastewater treatment and biological markers. In this paper, we reported a simple new method to prepared highly stable QDs by using multi-branched ligands. Our results suggested that multi-branched ligands-capped QDs have extremely good dynamic stability even in salt-saturated solution. Unlike to traditional dynamic stability theory, which considers the electrostatic repulsion of QDs dominant QD stability, the current work found a new determined factor: the steric hindrance of ligand structure. The high steric hindrance effect of multi-branched ligands can maintain the single dispersity of QDs even at extremely low electrostatic repulsion. As a result, QDs with ultrahigh stability against salts can be realized.

  14. Measuring photoluminescence spectra of self-assembly array nanowire of colloidal CdSe quantum dots using scanning near-field optics microscopy

    NASA Astrophysics Data System (ADS)

    Bai, Zhongchen; Hao, Licai; Zhang, Zhengping; Qin, Shuijie

    2016-05-01

    A novel periodic array CdSe nanowire is prepared on a substrate of the porous titanium dioxide by using a self-assembly method of the colloidal CdSe quantum dots (QDs). The experimental results show that the colloidal CdSe QDs have renewedly assembled on its space scale and direction in process of losing background solvent and form the periodic array nanowire. The main peak wavelength of Photoluminescence (PL) spectra, which is measured by using a 100-nm aperture laser beam spot on a scanning near-field optics microscopy, has shifted 60 nm with compared to the colloidal CdSe QDs. Furthermore, we have measured smaller ordered nanometer structure in thin QDs area as well, a 343-nm periodic nanowire in thick QDs area and the colloidal QDs in edge of well-ordered nanowire.

  15. Light-current curve of a tunneling-injection quantum dot laser

    NASA Astrophysics Data System (ADS)

    Han, Dae-Seob; Asryan, Levon V.

    2008-02-01

    The potential for high-power operation of a laser exploiting tunneling-injection of electrons and holes into quantum dots (QDs) from two separate quantum wells (QWs) is studied. An extended theoretical model is developed to account for out-tunneling leakage of carriers from QDs. Even in the presence of out-tunneling from QDs, the parasitic recombination flux outside QDs is shown to remain restricted with increasing injection current; correspondingly, the LCC becomes more and more linear and the slope efficiency closer to unity at high injection currents. The linearity is due to the fact that the current paths connecting the opposite sides of the structure lie entirely within QDs - in view of the threedimensional confinement in QDs, the out-tunneling fluxes of carriers from dots are limited.

  16. Describing Cognitive Structure.

    ERIC Educational Resources Information Center

    White, Richard T.

    This paper discusses questions pertinent to a definition of cognitive structure as the knowledge one possesses and the manner in which it is arranged, and considers how to select or devise methods of describing cognitive structure. The main purpose in describing cognitive structure is to see whether differences in memory (or cognitive structure)…

  17. Teaching Structured Fortran without Structured Extensions.

    ERIC Educational Resources Information Center

    Worland, Peter B.

    Six control structures are used in teaching a college Fortran programing course: (1) simple sequences of instruction without any control statement, (2) IF-THEN selection, (3) IF-THEN-ELSE selection, (4) definite loop, (5) indefinite loop, and (6) generalized IF-THEN-ELSE case structure. Outlines, instead of flowcharts, are employed for algorithm…

  18. Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

    SciTech Connect

    Hospodková, A. Oswald, J.; Pangrác, J.; Zíková, M.; Kubištová, J.; Kuldová, K.; Hulicius, E.; Komninou, Ph; Kioseoglou, J.

    2013-11-07

    The aim of this work is to offer new possibilities for quantum dot (QD) band structure engineering, which can be used for the design of QD structures for optoelectronic and single photon applications. Two types of QDs, InAs and GaAsSb, are combined in self assembled vertically correlated QD structures. The first QD layer is formed by InAs QDs and the second by vertically correlated GaAsSb QDs. Combined QD layers are separated by a triangular GaAsSb barrier. The structure can be prepared as type-I, with both electrons and holes confined in InAs QDs, exhibiting a strong photoluminescence, or type-II, with electrons confined in InAs QDs and holes in GaAsSb QDs. The presence of the thin triangular GaAsSb barrier enables the realization of different quantum level alignment between correlated InAs and GaAsSb QDs, which can be adjusted by structure parameters as type-I or type-II like for ground and excited states separately. The position of holes in this type of structure is influenced by the presence of the triangular barrier or by the size and composition of the GaAsSb QDs. The electron-hole wavefunction overlap and the photoluminescence intensity alike can also be controlled by structure engineering.

  19. Effects of N-acetyl-L-cysteine-capped CdTe quantum dots on bovine serum albumin and bovine hemoglobin: isothermal titration calorimetry and spectroscopic investigations.

    PubMed

    Sun, Haoyu; Cui, Erqian; Tan, Zhigang; Liu, Rutao

    2014-12-01

    The interactions of N-acetyl-L-cysteine-capped CdTe quantum dots (QDs) with bovine serum albumin (BSA) and bovine hemoglobin (BHb) were investigated by isothermal titration calorimetry (ITC), fluorescence, synchronous fluorescence, fluorescence lifetime, ultraviolet-visible absorption, and circular dichroism techniques. Fluorescence data of BSA-QDs and BHb-QDs revealed that the quenching was static in every system. While CdTe QDs changed the microenvironment of tryptophan in BHb, the microenvironment of BSA kept unchanged. Adding CdTe QDs affected the skeleton and secondary structure of the protein (BSA and BHb). The ITC results indicated that the interaction between the protein (BSA and BHb) and QDs-612 was spontaneous and the predominant force was hydrophobic interaction. In addition, the binding constants were determined to be 1.19 × 10(5) L mol(-1) (BSA-QDs) and 2.19 × 10(5) L mol(-1) (BHb-QDs) at 298 K. From these results, we conclude that CdTe QDs have a larger impact on the structure of BHb than BSA.

  20. A Dual Wavelength Echidna® Lidar (DWEL) for Forest Structure Retrieval

    NASA Astrophysics Data System (ADS)

    Strahler, A. H.; Douglas, E. S.; Martel, J.; Cook, T.; Mendillo, C.; Marshall, R. A.; Chakrabarti, S.; Schaaf, C.; Woodcock, C. E.; Li, Z.; Yang, X.; Culvenor, D.; Jupp, D.; Newnham, G.; Lovell, J.

    2012-12-01

    A newly-constructed, ground-based lidar scanner designed for automated retrieval of forest structure, the Dual Wavelength Echidna Lidar (DWEL), separates laser "hits" of leaves from hits of trunks and branches using simultaneous laser pulses at 1548 nm, where leaf water content produces strong absorption, and at 1064 nm, where leaves and branches have similar reflectances. The DWEL uses a rotating mirror scan mechanism on a revolving mount, coupled with full digitization of return waveforms, to identify, locate, and parameterize scattering events in the three-dimensional space around the scanner. In the DWEL instrument, the two measurement lasers are triggered simultaneously. Laser pulses are sharply peaked; full-width half-max pulse length of the lasers is 5.1 ns, corresponding to 1.53 m in distance. The laser pulses are expanded and collimated to a 6-mm beam diameter (1/e2), then shaped into a top-hat cross section using a diffraction apparatus. Interchangeable optics provide a beam divergence of 1.25-, 2.5-, or 5-mrad. A mirror and two dichroic filters combine the beams and join them with a visible green continuous-wave marker laser. The combined beam is guided along an optical path to the 10-cm rotating scan mirror. Scan encoders in zenith and azimuth directions resolve the pointing of the instrument to 215 units per 2π radians. Scan resolution has three settings: 1-, 2-, and 4-mrad. Scan time varies with resolution: 11 min at 4 mrad; 41 min at 2 mrad; and 2.7 hr at 1 mrad. The return beam enters the 10-cm diameter Newtonian-Nasmyth telescope and is directed to the receiver assembly, which splits the return beam using a dichroic filter and narrowband pass filters. Two 0.5 mm InGaAs photodiodes measure the return signal, which is sampled by two digitizers at 2 gigasamples per second with 10-bit precision. This provides a 7.5-cm sampling of the 1.53 m pulse, allowing very good reconstruction of the return waveform. The designed signal-to-noise ratio is 10:1 (8

  1. Structural system identification: Structural dynamics model validation

    SciTech Connect

    Red-Horse, J.R.

    1997-04-01

    Structural system identification is concerned with the development of systematic procedures and tools for developing predictive analytical models based on a physical structure`s dynamic response characteristics. It is a multidisciplinary process that involves the ability (1) to define high fidelity physics-based analysis models, (2) to acquire accurate test-derived information for physical specimens using diagnostic experiments, (3) to validate the numerical simulation model by reconciling differences that inevitably exist between the analysis model and the experimental data, and (4) to quantify uncertainties in the final system models and subsequent numerical simulations. The goal of this project was to develop structural system identification techniques and software suitable for both research and production applications in code and model validation.

  2. Structural health monitoring for ship structures

    SciTech Connect

    Farrar, Charles; Park, Gyuhae; Angel, Marian; Bement, Matthew; Salvino, Liming

    2009-01-01

    Currently the Office of Naval Research is supporting the development of structural health monitoring (SHM) technology for U.S. Navy ship structures. This application is particularly challenging because of the physical size of these structures, the widely varying and often extreme operational and environmental conditions associated with these ships missions, lack of data from known damage conditions, limited sensing that was not designed specifically for SHM, and the management of the vast amounts of data that can be collected during a mission. This paper will first define a statistical pattern recognition paradigm for SHM by describing the four steps of (1) Operational Evaluation, (2) Data Acquisition, (3) Feature Extraction, and (4) Statistical Classification of Features as they apply to ship structures. Note that inherent in the last three steps of this process are additional tasks of data cleansing, compression, normalization and fusion. The presentation will discuss ship structure SHM challenges in the context of applying various SHM approaches to sea trials data measured on an aluminum multi-hull high-speed ship, the HSV-2 Swift. To conclude, the paper will discuss several outstanding issues that need to be addressed before SHM can make the transition from a research topic to actual field applications on ship structures and suggest approaches for addressing these issues.

  3. Structural design methodology for large space structures

    NASA Astrophysics Data System (ADS)

    Dornsife, Ralph J.

    1992-02-01

    The Department of Defense requires research and development in designing, fabricating, deploying, and maintaining large space structures (LSS) in support of Army and Strategic Defense Initiative military objectives. Because of their large size, extreme flexibility, and the unique loading conditions in the space environment, LSS will present engineers with problems unlike those encountered in designing conventional civil engineering or aerospace structures. LSS will require sophisticated passive damping and active control systems in order to meet stringent mission requirements. These structures must also be optimally designed to minimize high launch costs. This report outlines a methodology for the structural design of LSS. It includes a definition of mission requirements, structural modeling and analysis, passive damping and active control system design, ground-based testing, payload integration, on-orbit system verification, and on-orbit assessment of structural damage. In support of this methodology, analyses of candidate LSS truss configurations are presented, and an algorithm correlating ground-based test behavior to expected microgravity behavior is developed.

  4. Structural design methodology for large space structures

    NASA Astrophysics Data System (ADS)

    Dornsife, Ralph J.

    The Department of Defense requires research and development in designing, fabricating, deploying, and maintaining large space structures (LSS) in support of Army and Strategic Defense Initiative military objectives. Because of their large size, extreme flexibility, and the unique loading conditions in the space environment, LSS will present engineers with problems unlike those encountered in designing conventional civil engineering or aerospace structures. LSS will require sophisticated passive damping and active control systems in order to meet stringent mission requirements. These structures must also be optimally designed to minimize high launch costs. This report outlines a methodology for the structural design of LSS. It includes a definition of mission requirements, structural modeling and analysis, passive damping and active control system design, ground-based testing, payload integration, on-orbit system verification, and on-orbit assessment of structural damage. In support of this methodology, analyses of candidate LSS truss configurations are presented, and an algorithm correlating ground-based test behavior to expected microgravity behavior is developed.

  5. Lightweight Materials & Structures

    NASA Video Gallery

    The Lightweight Materials and Structures (LMS) project will mature high-payoff structures and materials technologies that have direct application to NASA’s future space exploration needs.One of the...

  6. Reinforced structural plastics

    NASA Technical Reports Server (NTRS)

    Lubowitz, H. R.; Kendrick, W. P.; Jones, J. F.; Thorpe, R. S.; Burns, E. A. (Inventor)

    1972-01-01

    Reinforced polyimide structures are described. Reinforcing materials are impregnated with a suspension of polyimide prepolymer and bonded together by heat and pressure to form a cured, hard-reinforced, polyimide structure.

  7. Lessons from Structural Genomics*

    PubMed Central

    Terwilliger, Thomas C.; Stuart, David; Yokoyama, Shigeyuki

    2010-01-01

    A decade of structural genomics, the large-scale determination of protein structures, has generated a wealth of data and many important lessons for structural biology and for future large-scale projects. These lessons include a confirmation that it is possible to construct large-scale facilities that can determine the structures of a hundred or more proteins per year, that these structures can be of high quality, and that these structures can have an important impact. Technology development has played a critical role in structural genomics, the difficulties at each step of determining a structure of a particular protein can be quantified, and validation of technologies is nearly as important as the technologies themselves. Finally, rapid deposition of data in public databases has increased the impact and usefulness of the data and international cooperation has advanced the field and improved data sharing. PMID:19416074

  8. Space Structure Development

    NASA Technical Reports Server (NTRS)

    Smith, Thomas

    2015-01-01

    The duration of my Summer 2015 Internship Tour at NASA's Johnson Space Center was spent working in the Structural Engineering Division's Structures Branch. One of the two main roles of the Structures Branch, ES2, is to ensure the structural integrity of spacecraft vehicles and the structural subsystems needed to support those vehicles. The other main objective of this branch is to develop the lightweight structures that are necessary to take humans beyond Low-Earth Orbit. Within ES2, my four projects involved inflatable space structure air bladder material testing; thermal and impact material testing for spacecraft windows; structural analysis on a joint used in the Boeing CST-100 airbag system; and an additive manufacturing design project.

  9. Representing Substantive Structures.

    ERIC Educational Resources Information Center

    Finley, Fred N.; Stewart, James

    1982-01-01

    Discusses the meaning of Schwab's "substantive structures" of a discipline in terms of science philosophy. Presents three techniques for representing substantive structures and discusses some of their uses in science education research. (SK)

  10. Structural Engineering: Overview

    NASA Technical Reports Server (NTRS)

    Castro, Edgar

    2011-01-01

    This slide presentation presents the work of the Structural Engineering Division of the Engineering Directorate. The work includes: providing technical expertise and leadership for the development, evaluation, and operation of structural, mechanical, and thermal spaceflight systems.

  11. Structural materials and components

    NASA Technical Reports Server (NTRS)

    Gagliani, John (Inventor); Lee, Raymond (Inventor)

    1982-01-01

    High density structural (blocking) materials composed of a polyimide filled with glass microballoons and methods for making such materials. Structural components such as panels which have integral edgings and/or other parts made of the high density materials.

  12. Structural materials and components

    NASA Technical Reports Server (NTRS)

    Gagliani, John (Inventor); Lee, Raymond (Inventor)

    1982-01-01

    High density structural (blocking) materials composed of a polyimide filled with glass microballoons. Structural components such as panels which have integral edgings and/or other parts made of the high density materials.

  13. Structural materials and components

    NASA Technical Reports Server (NTRS)

    Gagliani, John (Inventor); Lee, Raymond (Inventor)

    1983-01-01

    High density structural (blocking) materials composed of a polyimide filled with glass microballoons. Structural components such as panels which have integral edgings and/or other parts made of the high density materials.

  14. Neutron reflecting supermirror structure

    DOEpatents

    Wood, J.L.

    1992-12-01

    An improved neutron reflecting supermirror structure comprising a plurality of stacked sets of bilayers of neutron reflecting materials. The improved neutron reflecting supermirror structure is adapted to provide extremely good performance at high incidence angles, i.e. up to four time the critical angle of standard neutron mirror structures. The reflection of neutrons striking the supermirror structure at a high critical angle provides enhanced neutron throughput, and hence more efficient and economical use of neutron sources. 2 figs.

  15. Synchronously Deployable Truss Structures

    NASA Technical Reports Server (NTRS)

    Rhodes, M. D.; Hedgepeth, J. M.

    1986-01-01

    Structure lightweight, readily deployed, and has reliable joints. New truss concept, designated as "pac truss," developed. Features easy deployment without need for complex mechanisms. Structures of this type deployed in free flight by controlled release of stored energy in torsional springs at selected hinges located throughout structure. Double-folding technique used in beam model applicable to flat planar trusses, allowing structures of large expanse to fold into compact packages and be deployed for space-platform applications.

  16. Neutron reflecting supermirror structure

    DOEpatents

    Wood, James L.

    1992-01-01

    An improved neutron reflecting supermirror structure comprising a plurality of stacked sets of bilayers of neutron reflecting materials. The improved neutron reflecting supermirror structure is adapted to provide extremely good performance at high incidence angles, i.e. up to four time the critical angle of standard neutron mirror structures. The reflection of neutrons striking the supermirror structure at a high critical angle provides enhanced neutron throughput, and hence more efficient and economical use of neutron sources.

  17. Optimization of composite structures

    NASA Technical Reports Server (NTRS)

    Stroud, W. J.

    1982-01-01

    Structural optimization is introduced and examples which illustrate potential problems associated with optimized structures are presented. Optimized structures may have very low load carrying ability for an off design condition. They tend to have multiple modes of failure occurring simultaneously and can, therefore, be sensitive to imperfections. Because composite materials provide more design variables than do metals, they allow for more refined tailoring and more extensive optimization. As a result, optimized composite structures can be especially susceptible to these problems.

  18. Endjoints For Structural Elements

    NASA Technical Reports Server (NTRS)

    Bush, Harold G.; Mikulas, Martin M.; Wallsom, Richard E.

    1989-01-01

    Endjoint and connecting-node system designed for use in erection of frames. System structurally sound and simple to operate. All nodes and struts interchangeable. Nodes and struts attach to form cubic cell structures to produce beams, platforms, towers, or combinations of these. Design suitable for use in construction of space structures and such terrestrial skeletal frameworks as antenna-reflector supports, roof structures for large buildings, lookout towers, radio-transmitter towers, powerline pylons, and scaffolds.

  19. Targeting and retention enhancement of quantum dots decorated with amino acids in an invertebrate model organism

    PubMed Central

    Xing, Rui; Chen, Xue-Dong; Zhou, Yan-Feng; Zhang, Jue; Su, Yuan-Yuan; Qiu, Jian-Feng; Sima, Yang-Hu; Zhang, Ke-Qin; He, Yao; Xu, Shi-Qing

    2016-01-01

    The use of quantum dots (QDs) in biological imaging applications and targeted drug delivery is expected to increase. However, the efficiency of QDs in drug targeting needs to be improved. Here, we show that amino acids linked to CdTe QDs significantly increased the targeted transfer efficiency and biological safety in the invertebrate model Bombyx mori. Compared with bare QDs530, the transfer efficiency of Ala- and Gly-conjugated QDs (QDs530-Ala and QDs530-Gly) in circulatory system increased by 2.6 ± 0.3 and 1.5 ± 0.3 times, and increased by 7.8 ± 0.9 and 2.9 ± 0.2 times in target tissue silk glands, respectively, after 24 h of QDs exposure. Meanwhile, the amount of conjugated QDs decreased by (68.4 ± 4.4)% and (46.7 ± 9.1)% in the non-target tissue fat body, and the speed at which they entered non-target circulating blood cells significantly decreased. The resultant QDs530-Ala revealed a better structural integrity in tissues and a longer retention time in hemolymph than that of QDs530 after exposure via the dorsal vessel. On the other hand, QDs530-Ala significantly reduced the toxicity to hemocytes, silk gland, and fat body, and reduced the amount of reactive oxygen species (ROS) in tissues. PMID:26806642

  20. Targeting and retention enhancement of quantum dots decorated with amino acids in an invertebrate model organism.

    PubMed

    Xing, Rui; Chen, Xue-Dong; Zhou, Yan-Feng; Zhang, Jue; Su, Yuan-Yuan; Qiu, Jian-Feng; Sima, Yang-Hu; Zhang, Ke-Qin; He, Yao; Xu, Shi-Qing

    2016-01-01

    The use of quantum dots (QDs) in biological imaging applications and targeted drug delivery is expected to increase. However, the efficiency of QDs in drug targeting needs to be improved. Here, we show that amino acids linked to CdTe QDs significantly increased the targeted transfer efficiency and biological safety in the invertebrate model Bombyx mori. Compared with bare QDs530, the transfer efficiency of Ala- and Gly-conjugated QDs (QDs530-Ala and QDs530-Gly) in circulatory system increased by 2.6 ± 0.3 and 1.5 ± 0.3 times, and increased by 7.8 ± 0.9 and 2.9 ± 0.2 times in target tissue silk glands, respectively, after 24 h of QDs exposure. Meanwhile, the amount of conjugated QDs decreased by (68.4 ± 4.4)% and (46.7 ± 9.1)% in the non-target tissue fat body, and the speed at which they entered non-target circulating blood cells significantly decreased. The resultant QDs530-Ala revealed a better structural integrity in tissues and a longer retention time in hemolymph than that of QDs530 after exposure via the dorsal vessel. On the other hand, QDs530-Ala significantly reduced the toxicity to hemocytes, silk gland, and fat body, and reduced the amount of reactive oxygen species (ROS) in tissues. PMID:26806642