Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wu, Qinke; Jung, Seong Jun; Jang, Sung Kyu; Lee, Joohyun; Jeon, Insu; Suh, Hwansoo; Kim, Yong Ho; Lee, Young Hee; Lee, Sungjoo; Song, Young Jae

2015-06-01

We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications.We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications. Electronic supplementary information (ESI) available: The growth conditions, statistical studies of OM images and high-resolution STM/TEM measurements for multi-/bi-layered graphene are discussed in detail. See DOI: 10.1039/c5nr02716k

Layer-by-layer growth by pulsed laser deposition in the unit-cell limit.

NASA Astrophysics Data System (ADS)

Kareev, M.; Prosandeev, S.; Liu, J.; Ryan, P.; Freeland, J. W.; Chakhalian, J.

2009-03-01

Unlike conventional growth of complex oxide heterostructures, the ultimate unit cell limit imposes strict constrains for a multitude of parameters critical to layer-by-layer growth. Here we report on detailed analysis of far-from-equilibrium growth by interrupted pulsed laser deposition with application to RENiO3/LaAlO3 superlattices grown on a diverse set of substrates SrTiO3, NdGaO3, LSAT and LaAlO3. A combination of in-situ high-pressure RHEED and AFM along with extensive data obtained from synchrotron based XRD and resonant XAS allows us critically assess the meaning of RHEED intensity oscillation and the effect of a polar/non-polar interface on the heteroepitaxial growth. The role of defects formed during the initial stages of growth is also addressed.

An Atomistic View of the Incipient Growth of Zinc Oxide Nanolayers

DOE PAGES

Chu, Manh Hung; Tian, Liang; Chaker, Ahmad; ...

2016-08-09

The growth of zinc oxide thin films by atomic layer deposition is believed to proceed through an embryonic step in which three-dimensional nanoislands form and then coalesce to trigger a layer-by-layer growth mode. This transient initial state is characterized by a poorly ordered atomic structure, which may be inaccessible by X-ray diffraction techniques. Here in this work, we apply X-ray absorption spectroscopy in situ to address the local structure of Zn after each atomic layer deposition cycle, using a custom-built reactor mounted at a synchrotron beamline, and we shed light on the atomistic mechanisms taking place during the first stagesmore » of the growth. We find that such mechanisms are surprisingly different for zinc oxide growth on amorphous (silica) and crystalline (sapphire) substrate. Ab initio simulations and quantitative data analysis allow the formulation of a comprehensive growth model, based on the different effects of surface atoms and grain boundaries in the nanoscale islands, and the consequent induced local disorder. From a comparison of these spectroscopy results with those from X-ray diffraction reported recently, we observe that the final structure of the zinc oxide nanolayers depends strongly on the mechanisms taking place during the initial stages of growth. Finally, the approach followed here for the case of zinc oxide will be of general interest for characterizing and optimizing the growth and properties of more complex nanostructures.« less

An Atomistic View of the Incipient Growth of Zinc Oxide Nanolayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Manh Hung; Tian, Liang; Chaker, Ahmad

The growth of zinc oxide thin films by atomic layer deposition is believed to proceed through an embryonic step in which three-dimensional nanoislands form and then coalesce to trigger a layer-by-layer growth mode. This transient initial state is characterized by a poorly ordered atomic structure, which may be inaccessible by X-ray diffraction techniques. Here in this work, we apply X-ray absorption spectroscopy in situ to address the local structure of Zn after each atomic layer deposition cycle, using a custom-built reactor mounted at a synchrotron beamline, and we shed light on the atomistic mechanisms taking place during the first stagesmore » of the growth. We find that such mechanisms are surprisingly different for zinc oxide growth on amorphous (silica) and crystalline (sapphire) substrate. Ab initio simulations and quantitative data analysis allow the formulation of a comprehensive growth model, based on the different effects of surface atoms and grain boundaries in the nanoscale islands, and the consequent induced local disorder. From a comparison of these spectroscopy results with those from X-ray diffraction reported recently, we observe that the final structure of the zinc oxide nanolayers depends strongly on the mechanisms taking place during the initial stages of growth. Finally, the approach followed here for the case of zinc oxide will be of general interest for characterizing and optimizing the growth and properties of more complex nanostructures.« less

Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanoto, H.; Loke, W. K.; Yoon, S. F.

In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness of the sample where the first few monolayers of the GaAs were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to the sample without such a process, indicating better surface planarity. From the (004) x-ray diffraction rocking curve measurement, the full width at half maximum of the GaAs layer nucleated by MEE is 40% lower compared to that of the GaAs layer without such a process, indicating better crystal quality. Furthermore, it was found that the sample wheremore » the GaAs layer was nucleated by MEE experienced early relaxation. As the MEE process promotes two-dimensional growth, the GaAs layer where nucleation was initiated by such a process has fewer islandlike formations. This leads to a pseudomorphically grown GaAs layer, which experiences higher strain compared to the GaAs layer with more islandlike formations, where most relaxation occurs on the free surface of the islands. Therefore, for the same layer thickness, the GaAs layer on (100) Ge/Si substrate where nucleation was initiated by MEE relaxed first.« less

Layer-selective synthesis of bilayer graphene via chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yang, Ning; Choi, Kyoungjun; Robertson, John; Park, Hyung Gyu

2017-09-01

A controlled synthesis of high-quality AB-stacked bilayer graphene by chemical vapor deposition demands a detailed understanding of the mechanism and kinetics. By decoupling the growth of the two layers via a growth-and-regrowth scheme, we report the kinetics and termination mechanisms of the bilayer graphene growth on copper. We observe, for the first time, that the secondary layer growth follows Gompertzian kinetics. Our observations affirm the postulate of a time-variant transition from a mass-transport-limited to a reaction-limited regimes and identify the mechanistic disparity between the monolayer growth and the secondary-layer expansion underneath the monolayer cover. It is the continuous carbon supply that drives the expansion of the graphene secondary layer, rather than the initially captured carbon amount, suggesting an essential role of the surface diffusion of reactant adsorbates in the interspace between the top graphene layer and the underneath copper surface. We anticipate that the layer selectivity of the growth relies on the entrance energetics of the adsorbed reactants to the graphene-copper interspace across the primary-layer edge, which could be engineered by tailoring the edge termination state. The temperature-reliant saturation area of the secondary-layer expansion is understood as a result of competitive attachment of carbon and hydrogen adatoms to the secondary-layer graphene edge.

Modeling large wind farms in conventionally neutral atmospheric boundary layers under varying initial conditions

NASA Astrophysics Data System (ADS)

Allaerts, Dries; Meyers, Johan

2014-05-01

Atmospheric boundary layers (ABL) are frequently capped by an inversion layer limiting the entrainment rate and boundary layer growth. Commonly used analytical models state that the entrainment rate is inversely proportional to the inversion strength. The height of the inversion turns out to be a second important parameter. Conventionally neutral atmospheric boundary layers (CNBL) are ABLs with zero surface heat flux developing against a stratified free atmosphere. In this regime the inversion-filling process is merely driven by the downward heat flux at the inversion base. As a result, CNBLs are strongly dependent on the heating history of the boundary layer and strong inversions will fail to erode during the course of the day. In case of large wind farms, the power output of the farm inside a CNBL will depend on the height and strength of the inversion above the boundary layer. On the other hand, increased turbulence levels induced by wind farms may partially undermine the rigid lid effect of the capping inversion, enhance vertical entrainment of air into the farm, and increase boundary layer growth. A suite of large eddy simulations (LES) is performed to investigate the effect of the capping inversion on the conventionally neutral atmospheric boundary layer and on the wind farm performance under varying initial conditions. For these simulations our in-house pseudo-spectral LES code SP-Wind is used. The wind turbines are modelled using a non-rotating actuator disk method. In the absence of wind farms, we find that a decrease in inversion strength corresponds to a decrease in the geostrophic angle and an increase in entrainment rate and geostrophic drag. Placing the initial inversion base at higher altitudes further reduces the effect of the capping inversion on the boundary layer. The inversion can be fully neglected once it is situated above the equilibrium height that a truly neutral boundary layer would attain under the same external conditions such as geostrophic wind speed and surface roughness. Wind farm simulations show the expected increase in boundary layer height and growth rate with respect to the case without wind farms. Raising the initial strength of the capping inversion in these simulations dampens the turbulent growth of the boundary layer above the farm, decreasing the farms energy extraction. The authors acknowledge support from the European Research Council (FP7-Ideas, grant no. 306471). Simulations were performed on the computing infrastructure of the VSC Flemish Supercomputer Center, funded by the Hercules Foundation and the Flemish Government.

Analytical and experimental investigation of fatigue in lap joints

NASA Astrophysics Data System (ADS)

Swenson, Daniel V.; Chih-Chien, Chia; Derber, Thomas G.

A finite element model is presented that can simulate crack growth in layered structures such as lap joints. The layers can be joined either by rivets or adhesives. The crack is represented discretely in the mesh, and automatic remeshing is performed as the crack grows. Because of the connections between the layers, load is transferred to the uncracked layer as the crack grows. This reduces the stress intensity and slows the crack growth rate. The model is used to analyze tests performed on a section of a wing spanwise lap joint. The crack was initiated at a rivet and grown under constant amplitude cyclic loads. Both experimentally observed crack growth rates and the analysis show the retardation that occurs as a result of load transfer between layers. A good correlation is obtained between predicted and observed crack growth rates for the fullly developed through-thickness crack.

Growing multiplex networks with arbitrary number of layers

NASA Astrophysics Data System (ADS)

Momeni, Naghmeh; Fotouhi, Babak

2015-12-01

This paper focuses on the problem of growing multiplex networks. Currently, the results on the joint degree distribution of growing multiplex networks present in the literature pertain to the case of two layers and are confined to the special case of homogeneous growth and are limited to the state state (that is, the limit of infinite size). In the present paper, we first obtain closed-form solutions for the joint degree distribution of heterogeneously growing multiplex networks with arbitrary number of layers in the steady state. Heterogeneous growth means that each incoming node establishes different numbers of links in different layers. We consider both uniform and preferential growth. We then extend the analysis of the uniform growth mechanism to arbitrary times. We obtain a closed-form solution for the time-dependent joint degree distribution of a growing multiplex network with arbitrary initial conditions. Throughout, theoretical findings are corroborated with Monte Carlo simulations. The results shed light on the effects of the initial network on the transient dynamics of growing multiplex networks and takes a step towards characterizing the temporal variations of the connectivity of growing multiplex networks, as well as predicting their future structural properties.

Controllable Growth and Formation Mechanisms of Dislocated WS2 Spirals.

PubMed

Fan, Xiaopeng; Zhao, Yuzhou; Zheng, Weihao; Li, Honglai; Wu, Xueping; Hu, Xuelu; Zhang, Xuehong; Zhu, Xiaoli; Zhang, Qinglin; Wang, Xiao; Yang, Bin; Chen, Jianghua; Jin, Song; Pan, Anlian

2018-06-13

Two-dimensional (2D) layered metal dichalcogenides can form spiral nanostructures by a screw-dislocation-driven mechanism, which leads to changes in crystal symmetry and layer stackings that introduce attractive physical properties different from their bulk and few-layer nanostructures. However, controllable growth of spirals is challenging and their growth mechanisms are poorly understood. Here, we report the controllable growth of WS 2 spiral nanoplates with different stackings by a vapor phase deposition route and investigate their formation mechanisms by combining atomic force microscopy with second harmonic generation imaging. Previously not observed "spiral arm" features could be explained as covered dislocation spiral steps, and the number of spiral arms correlates with the number of screw dislocations initiated at the bottom plane. The supersaturation-dependent growth can generate new screw dislocations from the existing layers, or even new layers templated by existing screw dislocations. Different number of dislocations and orientation of new layers result in distinct morphologies, different layer stackings, and more complex nanostructures, such as triangular spiral nanoplates with hexagonal spiral pattern on top. This work provides the understanding and control of dislocation-driven growth of 2D nanostructures. These spiral nanostructures offer diverse candidates for probing the physical properties of layered materials and exploring new applications in functional nanoelectronic and optoelectronic devices.

New Growth Mode through Decorated Twin Boundaries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bleikamp, Sebastian; Thoma, Arne; Polop, Celia

2006-03-24

Scanning tunneling microscopy and low energy electron diffraction were used to investigate the growth of partly twinned Ir thin films on Ir(111). A transition from the expected layer-by-layer to a defect dominated growth mode with a fixed lateral length scale and increasing roughness is observed. During growth, the majority of the film is stably transformed to twinned stacking. This transition is initiated by the energetic avoidance of the formation of intrinsic stacking faults compared to two independent twin faults. The atomistic details of the defect kinetics are outlined.

New growth mode through decorated twin boundaries.

PubMed

Bleikamp, Sebastian; Thoma, Arne; Polop, Celia; Pirug, Gerhard; Linke, Udo; Michely, Thomas

2006-03-24

Scanning tunneling microscopy and low energy electron diffraction were used to investigate the growth of partly twinned Ir thin films on Ir(111). A transition from the expected layer-by-layer to a defect dominated growth mode with a fixed lateral length scale and increasing roughness is observed. During growth, the majority of the film is stably transformed to twinned stacking. This transition is initiated by the energetic avoidance of the formation of intrinsic stacking faults compared to two independent twin faults. The atomistic details of the defect kinetics are outlined.

Transient Growth Analysis of Compressible Boundary Layers with Parabolized Stability Equations

NASA Technical Reports Server (NTRS)

Paredes, Pedro; Choudhari, Meelan M.; Li, Fei; Chang, Chau-Lyan

2016-01-01

The linear form of parabolized linear stability equations (PSE) is used in a variational approach to extend the previous body of results for the optimal, non-modal disturbance growth in boundary layer flows. This methodology includes the non-parallel effects associated with the spatial development of boundary layer flows. As noted in literature, the optimal initial disturbances correspond to steady counter-rotating stream-wise vortices, which subsequently lead to the formation of stream-wise-elongated structures, i.e., streaks, via a lift-up effect. The parameter space for optimal growth is extended to the hypersonic Mach number regime without any high enthalpy effects, and the effect of wall cooling is studied with particular emphasis on the role of the initial disturbance location and the value of the span-wise wavenumber that leads to the maximum energy growth up to a specified location. Unlike previous predictions that used a basic state obtained from a self-similar solution to the boundary layer equations, mean flow solutions based on the full Navier-Stokes (NS) equations are used in select cases to help account for the viscous-inviscid interaction near the leading edge of the plate and also for the weak shock wave emanating from that region. These differences in the base flow lead to an increasing reduction with Mach number in the magnitude of optimal growth relative to the predictions based on self-similar mean-flow approximation. Finally, the maximum optimal energy gain for the favorable pressure gradient boundary layer near a planar stagnation point is found to be substantially weaker than that in a zero pressure gradient Blasius boundary layer.

Understanding the barriers to crystal growth: dynamical simulation of the dissolution and growth of urea from aqueous solution.

PubMed

Piana, Stefano; Gale, Julian D

2005-02-16

Both the dissolution and growth of a molecular crystalline material, urea, has been studied using dynamical atomistic simulation. The kinetic steps of dissolution and growth are clearly identified, and the activation energies for each possible step are calculated. Our molecular dynamics simulations indicate that crystal growth on the [001] face is characterized by a nucleation and growth mechanism. Nucleation on the [001] urea crystal face is predicted to occur at a very high rate, followed by rapid propagation of the steps. The rate-limiting step for crystallization is actually found to be the removal of surface defects, rather than the initial formation of the next surface layer. Through kinetic Monte Carlo modeling of the surface growth, it is found that this crystal face evolves via a rough surface topography, rather than a clean layer-by-layer mechanism.

Birth order dependent growth cone segregation determines synaptic layer identity in the Drosophila visual system.

PubMed

Kulkarni, Abhishek; Ertekin, Deniz; Lee, Chi-Hon; Hummel, Thomas

2016-03-17

The precise recognition of appropriate synaptic partner neurons is a critical step during neural circuit assembly. However, little is known about the developmental context in which recognition specificity is important to establish synaptic contacts. We show that in the Drosophila visual system, sequential segregation of photoreceptor afferents, reflecting their birth order, lead to differential positioning of their growth cones in the early target region. By combining loss- and gain-of-function analyses we demonstrate that relative differences in the expression of the transcription factor Sequoia regulate R cell growth cone segregation. This initial growth cone positioning is consolidated via cell-adhesion molecule Capricious in R8 axons. Further, we show that the initial growth cone positioning determines synaptic layer selection through proximity-based axon-target interactions. Taken together, we demonstrate that birth order dependent pre-patterning of afferent growth cones is an essential pre-requisite for the identification of synaptic partner neurons during visual map formation in Drosophila.

The vertical growth of MoS2 layers at the initial stage of CVD from first-principles

NASA Astrophysics Data System (ADS)

Xue, Xiong-Xiong; Feng, Yexin; Chen, Keqiu; Zhang, Lixin

2018-04-01

Chemical vapor deposition (CVD) is the highly preferred method for mass production of transition metal dichalcogenide (TMD) layers, yet the atomic-scale knowledge is still lacking about the nucleation and growth. In this study, by using first-principles calculations, we show that, on Au(111) surface, one-dimensional (1D) MoxSy chains are first formed by coalescing of smaller feeding species and are energetically favored at the early stage of nucleation. Two-dimensional (2D) layers can be stabilized only after the number of Mo atoms exceeds ˜12. A vertical growth mode is revealed which accomplishes the structural transformation from the 1D chains to the 2D layers for the clusters while growing. The competition between intralayer and interlayer interactions is the key. These findings serve as new insights for better understanding the atomistic mechanism of the nucleation and growth of TMDs on the surface.

2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth

NASA Astrophysics Data System (ADS)

Rogilo, D. I.; Fedina, L. I.; Kosolobov, S. S.; Ranguelov, B. S.; Latyshev, A. V.

2017-01-01

Initial and late stages of 2D Si island nucleation and growth (2DNG) on extra-large ( 100 μm) and medium size (1-10 μm) atomically flat Si(111)-(7×7) terraces bordered by step bunches have been studied by in situ REM at T =600-750 °С. At first, the layer-by-layer 2DNG takes place on whole terraces and 2D island concentration dependence on deposition rate R corresponds to critical nucleus size i =1. Continuous 2DNG triggers morphological instabilities: elongated pyramidlike waves and separate pyramids emerge on all terraces at T ≤720 °С and T =750 °С, respectively. Both instabilities arise due to the imbalance of uphill/downhill adatom currents related with large Ehrlich-Schwöbel (ES) barriers and permeability of straight [ 11 bar 2 ] -type step edges. However, the first one is initiated by dominant downhill adatom current to distant sinks: bunches, wave's step edges, and "vacancy" islands emerging on terraces due to 2D island coalescence. As a result, top layer size decreases to the critical terrace width λ where 2DNG takes place. From the analysis of λ ∝ R - χ / 2 scaling at T =650 °C, we have found that i increases from i =2 on a three-layer wave to i =6-8 on a six-layer wave. This authenticates the significance of downhill adatom sink to distant steps related to the step permeability. The second instability type at T >720 °C is related to the raising of uphill adatom current due to slightly larger ES barrier for step-up attachment comparing to the step-down one (EES- 0.9 eV [Phys. Rev. Lett. 111 (2013) 036105]). This leads to "second layer" 2D nucleation on top layers, which triggers the growth of separate pyramids. Because of small difference between ES barriers, net uphill/downhill adatom currents are nearly equivalent, and therefore layer coverage distributions of both instabilities display similar linear slopes.

In situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth

NASA Astrophysics Data System (ADS)

Halagačka, L.; Foldyna, M.; Leal, R.; Roca i Cabarrocas, P.

2018-07-01

Low-temperature growth of doped epitaxial silicon layers is a promising way to reduce the cost of p-n junction formation in c-Si solar cells. In this work, we study process of highly doped epitaxial silicon layer growth using in situ spectroscopic ellipsometry. The film was deposited by plasma-enhanced chemical vapor deposition (PECVD) on a crystalline silicon substrate at a low substrate temperature of 200 °C. In the deposition process, SiF4 was used as a precursor, B2H6 as doping gas, and a hydrogen/argon mixture as carrier gas. A spectroscopic ellipsometer with a wide spectral range was used for in situ spectroscopic measurements. Since the temperature during process is 200 °C, the optical functions of silicon differ from these at room temperature and have to be adjusted. Thickness of the epitaxial silicon layer was fitted on in situ ellipsometric data. As a result we were able to determine the dynamics of epitaxial layer growth, namely initial layer formation time and epitaxial growth rate. This study opens new perspectives in understanding and monitoring the epitaxial silicon deposition processes as the model fitting can be applied directly during the growth.

Effects of gravity in folding

NASA Astrophysics Data System (ADS)

Minkel, Donald Howe

Effects of gravity on buckle folding are studied using a Newtonian fluid finite element model of a single layer embedded between two thicker less viscous layers. The methods allow arbitrary density jumps, surface tension coefficients, resistance to slip at the interfaces, and tracking of fold growth to a large amplitudes. When density increases downward in two equal jumps, a layer buckles less and thickens more than with uniform density. When density increases upward in two equal jumps, it buckles more and thickens less. A low density layer with periodic thickness variations buckles more, sometimes explosively. Thickness variations form, even if not present initially. These effects are greater with; smaller viscosities, larger density jump, larger length scale, and slower shortening rate. They also depend on wavelength and amplitude, and these dependencies are described in detail. The model is applied to the explosive growth of the salt anticlines of the Paradox Basin, Colorado and Utah. There, shale (higher density) overlies salt (lower density). Methods for simulating realistic earth surface erosion and deposition conditions are introduced. Growth rates increase both with ease of slip at the salt-shale interface, and when earth surface relief stays low due to erosion and deposition. Model anticlines grow explosively, attaining growth rates and amplitudes close to those of the field examples. Fastest growing wavelengths are the same as seen in the field. It is concluded that a combination of partial-slip at the salt-shale interface, with reasonable earth surface conditions, promotes sufficiently fast buckling of the salt-shale interface due to density inversion alone. Neither basement faulting, nor tectonic shortening is required to account for the observed structures. Of fundamental importance is the strong tendency of gravity to promote buckling in low density layers with thickness variations. These develop, even if not present initially.

Effect of Enhanced Thermal Stability of Alumina Support Layer on Growth of Vertically Aligned Single-Walled Carbon Nanotubes and Their Application in Nanofiltration Membranes.

PubMed

In, Jung Bin; Cho, Kang Rae; Tran, Tung Xuan; Kim, Seok-Min; Wang, Yinmin; Grigoropoulos, Costas P; Noy, Aleksandr; Fornasiero, Francesco

2018-06-07

We investigate the thermal stability of alumina supporting layers sputtered at different conditions and its effect on the growth of aligned single-walled carbon nanotube arrays. Radio frequency magnetron sputtering of alumina under oxygen-argon atmosphere produces a Si-rich alumina alloy film on a silicon substrate. Atomic force microscopy on the annealed catalysts reveals that Si-rich alumina films are more stable than alumina layers with low Si content at the elevated temperatures at which the growth of single-walled carbon nanotubes is initiated. The enhanced thermal stability of the Si-rich alumina layer results in a narrower (< 2.2 nm) diameter distribution of the single-walled carbon nanotubes. Thanks to the smaller diameters of their nanotube pores, membranes fabricated with vertically aligned nanotubes grown on the stable layers display improved ion selectivity.

Effect of Enhanced Thermal Stability of Alumina Support Layer on Growth of Vertically Aligned Single-Walled Carbon Nanotubes and Their Application in Nanofiltration Membranes

NASA Astrophysics Data System (ADS)

In, Jung Bin; Cho, Kang Rae; Tran, Tung Xuan; Kim, Seok-Min; Wang, Yinmin; Grigoropoulos, Costas P.; Noy, Aleksandr; Fornasiero, Francesco

2018-06-01

We investigate the thermal stability of alumina supporting layers sputtered at different conditions and its effect on the growth of aligned single-walled carbon nanotube arrays. Radio frequency magnetron sputtering of alumina under oxygen-argon atmosphere produces a Si-rich alumina alloy film on a silicon substrate. Atomic force microscopy on the annealed catalysts reveals that Si-rich alumina films are more stable than alumina layers with low Si content at the elevated temperatures at which the growth of single-walled carbon nanotubes is initiated. The enhanced thermal stability of the Si-rich alumina layer results in a narrower (< 2.2 nm) diameter distribution of the single-walled carbon nanotubes. Thanks to the smaller diameters of their nanotube pores, membranes fabricated with vertically aligned nanotubes grown on the stable layers display improved ion selectivity.

The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Fini, P.; Wu, X.; Tarsa, E.; Golan, Y.; Srikant, V.; Keller, S.; Denbaars, S.; Speck, J.

1998-08-01

The evolution of morphology and associated extended defects in GaN thin films grown on sapphire by metalorganic chemical vapor deposition (MOCVD) are shown to depend strongly on the growth environment. For the commonly used two-step growth process, a change in growth parameter such as reactor pressure influences the initial high temperature (HT) GaN growth mechanism. By means of transmission electron microscopy (TEM), atomic force microscopy (AFM), and high resolution X-ray diffraction (HRXRD) measurements, it is shown that the initial density of HT islands on the nucleation layer (NL) and subsequently the threading dislocation density in the HT GaN film may be directly controlled by tailoring the initial HT GaN growth conditions.

Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Bui, Hao, E-mail: H.VanBui@utwente.nl; Wiggers, Frank B.; Gupta, Anubha

2015-01-01

The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N{sub 2}-H{sub 2} mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution ofmore » the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30 nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (101{sup ¯}0) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.« less

Birth order dependent growth cone segregation determines synaptic layer identity in the Drosophila visual system

PubMed Central

Kulkarni, Abhishek; Ertekin, Deniz; Lee, Chi-Hon; Hummel, Thomas

2016-01-01

The precise recognition of appropriate synaptic partner neurons is a critical step during neural circuit assembly. However, little is known about the developmental context in which recognition specificity is important to establish synaptic contacts. We show that in the Drosophila visual system, sequential segregation of photoreceptor afferents, reflecting their birth order, lead to differential positioning of their growth cones in the early target region. By combining loss- and gain-of-function analyses we demonstrate that relative differences in the expression of the transcription factor Sequoia regulate R cell growth cone segregation. This initial growth cone positioning is consolidated via cell-adhesion molecule Capricious in R8 axons. Further, we show that the initial growth cone positioning determines synaptic layer selection through proximity-based axon-target interactions. Taken together, we demonstrate that birth order dependent pre-patterning of afferent growth cones is an essential pre-requisite for the identification of synaptic partner neurons during visual map formation in Drosophila. DOI: http://dx.doi.org/10.7554/eLife.13715.001 PMID:26987017

In situ observation of the growth of biofouling layer in osmotic membrane bioreactors by multiple fluorescence labeling and confocal laser scanning microscopy.

PubMed

Yuan, Bo; Wang, Xinhua; Tang, Chuyang; Li, Xiufen; Yu, Guanghui

2015-05-15

Since the concept of the osmotic membrane bioreactor (OMBR) was introduced in 2008, it has attracted growing interests for its potential applications in wastewater treatment and reclamation; however, the fouling mechanisms of forward osmosis (FO) membrane especially the development of biofouling layer in the OMBR are not yet clear. Here, the fouled FO membranes were obtained from the OMBRs on days 3, 8 and 25 in sequence, and then the structure and growing rule of the biofouling layer formed on the FO membrane samples were in-situ characterized by multiple fluorescence labeling and confocal laser scanning microscopy (CLSM). CLSM images indicated that the variations in abundance and distribution of polysaccharides, proteins and microorganisms in the biofouling layer during the operation of OMBRs were significantly different. Before the 8th day, their biovolume dramatically increased. Subsequently, the biovolumes of β-d-glucopyranose polysaccharides and proteins continued increasing and leveled off after 8 days, respectively, while the biovolumes of α-d-glucopyranose polysaccharides and microorganisms decreased. Extracellular polymeric substances (EPS) played a significant role in the formation and growth of biofouling layer, while the microorganisms were seldom detected on the upper fouling layer after 3 days. Based on the results obtained in this study, the growth of biofouling layer on the FO membrane surface in the OMBR could be divided into three stages. Initially, EPS was firstly deposited on the FO membrane surface, and then microorganisms associated with EPS located in the initial depositing layer to form clusters. After that, the dramatic increase of the clusters of EPS and microorganisms resulted in the quick growth of biofouling layer during the flux decline of the OMBR. However, when the water flux became stable in the OMBR, some microorganisms and EPS would be detached from the FO membrane surface. Copyright © 2015 Elsevier Ltd. All rights reserved.

The Influence of Grain Structure on Intermetallic Compound Layer Growth Rates in Fe-Al Dissimilar Welds

NASA Astrophysics Data System (ADS)

Xu, Lei; Robson, Joseph D.; Wang, Li; Prangnell, Philip B.

2018-02-01

The thickness of the intermetallic compound (IMC) layer that forms when aluminum is welded to steel is critical in determining the properties of the dissimilar joints. The IMC reaction layer typically consists of two phases ( η and θ) and many attempts have been made to determine the apparent activation energy for its growth, an essential parameter in developing any predictive model for layer thickness. However, even with alloys of similar composition, there is no agreement of the correct value of this activation energy. In the present work, the IMC layer growth has been characterized in detail for AA6111 aluminum to DC04 steel couples under isothermal annealing conditions. The samples were initially lightly ultrasonically welded to produce a metallic bond, and the structure and thickness of the layer were then characterized in detail, including tracking the evolution of composition and grain size in the IMC phases. A model developed previously for Al-Mg dissimilar welds was adapted to predict the coupled growth of the two phases in the layer, whilst accounting explicitly for grain boundary and lattice diffusion, and considering the influence of grain growth. It has been shown that the intermetallic layer has a submicron grain size, and grain boundary diffusion as well as grain growth plays a critical role in determining the thickening rate for both phases. The model was used to demonstrate how this explains the wide scatter in the apparent activation energies previously reported. From this, process maps were developed that show the relative importance of each diffusion path to layer growth as a function of temperature and time.

Growth of multilayered polycrystalline reaction rims in the MgO-SiO2 system, part I: experiments

NASA Astrophysics Data System (ADS)

Gardés, E.; Wunder, B.; Wirth, R.; Heinrich, W.

2011-01-01

Growth of transport-controlled reaction layers between single crystals of periclase and quartz, and forsterite and quartz was investigated experimentally at 1.5 GPa, 1100°C to 1400°C, 5 min to 72 h under dry and melt-free conditions using a piston-cylinder apparatus. Starting assemblies consisting of Per | Qtz | Fo sandwiches produced polycrystalline double layers of forsterite and enstatite between periclase and quartz, and enstatite single layers between forsterite and quartz. The position of inert Pt-markers initially deposited at the interface of the reactants and inspection of mass balance confirmed that both layer-producing reactions are controlled by MgO diffusion, while SiO2 is relatively immobile. BSE and TEM imaging revealed thicknesses from 0.6 μm to 14 μm for double layers and from 0 to 6.8 μm for single layers. Both single and double layers displayed non-parabolic growth together with pronounced grain coarsening. Textural evolution and growth rates for each reaction are directly comparable. Forsterite-enstatite double layers are always wider than enstatite single layers, and the growth of enstatite in the double layer is slower than that in the single layer. In double layers, the enstatite/forsterite layer thickness ratio significantly increases with temperature, reflecting different MgO mobilities as temperature varies. Thus, thickness ratios in multilayered reaction zones may contain a record of temperature, but also that of any physico-chemical parameter that modifies the mobilities of the chemical components between the various layers. This potential is largely unexplored in geologically relevant systems, which calls for further experimental studies of multilayered reaction zones.

Low-Temperature Growth and Doping of Mercury-Based II-Vi Multiple Quantum Well Structures by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Lansari, Yamina

The growth of Hg-based single layers and multiple quantum well structures by conventional molecular beam epitaxy (MBE) and photoassisted MBE was studied. The use of photoassisted MBE, an epitaxial growth technique developed at NCSU, has resulted in a substantial reduction of the film growth temperature. Indeed, substrate temperatures 50 to 100^circC lower than those customarily used by others for conventional MBE growth of Hg-based layers were successfully employed. Photoassisted MBE allowed the preparation of excellent structural quality HgTe layers (FWHM for the (400) diffraction peak ~ 40 arcsec), HgCdTe layers (FWHM for the (400) diffraction peak ~ 14 arcsec), and HgTeCdTe superlattices (FWHM for the (400) diffraction peak ~ 28 arcsec). In addition, n-type and p-type modulation-doping of Hg-based multilayers was accomplished by photoassisted MBE. This technique has been shown to have a significant effect on the growth process kinetics as well as on the desorption rates of the film species, thereby affecting dopant incorporation mechanisms and allowing for the successful substitutional doping of the multilayer structures. Finally, surface morphology studies were completed using scanning electron microscopy (SEM) and Nomarsky optical microscopy to study the effects of substrate surface preparation, growth initiation, and growth parameters on the density of pyramidal hillocks, a common growth defect plaguing the Hg-based layers grown in the (100) direction. Conditions which minimize the hillock density for (100) film growth have been determined.

The stabilizing effect of compressibility in turbulent shear flow

NASA Technical Reports Server (NTRS)

Sarkar, S.

1994-01-01

Direct numerical simulation of turbulent homogeneous shear flow is performed in order to clarify compressibility effects on the turbulence growth in the flow. The two Mach numbers relevant to homogeneous shear flow are the turbulent Mach number M(t) and the gradient Mach number M(g). Two series of simulations are performed where the initial values of M(g) and M(t) are increased separately. The growth rate of turbulent kinetic energy is observed to decrease in both series of simulations. This 'stabilizing' effect of compressibility on the turbulent energy growth rate is observed to be substantially larger in the DNS series where the initial value of M(g) is changed. A systematic companion of the different DNS cues shows that the compressibility effect of reduced turbulent energy growth rate is primarily due to the reduced level of turbulence production and not due to explicit dilatational effects. The reduced turbulence production is not a mean density effect since the mean density remains constant in compressible homogeneous shear flow. The stabilizing effect of compressibility on the turbulence growth is observed to increase with the gradient Mach number M(g) in the homogeneous shear flow DNS. Estimates of M(g) for the mixing and the boundary layer are obtained. These estimates show that the parameter M(g) becomes much larger in the high-speed mixing layer relative to the high-speed boundary layer even though the mean flow Mach numbers are the same in the two flows. Therefore, the inhibition of turbulent energy production and consequent 'stabilizing' effect of compressibility on the turbulence (over and above that due to the mean density variation) is expected to be larger in the mixing layer relative to the boundary layer in agreement with experimental observations.

Growth and interfacial structure of methylammonium lead iodide thin films on Au(111)

NASA Astrophysics Data System (ADS)

She, Limin; Liu, Meizhuang; Li, Xiaoli; Cai, Zeying; Zhong, Dingyong

2017-02-01

Due to the promising optoelectronic properties, organic-inorganic hybrid perovskites have been intensively studied as the active layers in perovskite solar cells. However, the structural information about their interface, one of the key factors determining device performances, is so far very rare. Herein, we report on the growth of CH3NH3PbI3 (MAPbI3, MA=CH3NH3) thin films by means of vapor deposition under ultrahigh vacuum. The surface morphology and interfacial structure have been investigated by scanning tunneling microscopy. At the initial growth stage, a complicated transient phase consisting of three atomic layers, i.e., iodine, MA-PbI4 and MA-I, was formed on the Au(111) substrate. With the coverage increasing, atomically smooth MAPbI3 films with orthorhombic structure have been obtained after annealing to 373 K. The films followed a self-organized twofold-layer by twofold-layer growth mode with the formation of complete PbI6 octahedrons and the exposure of MA-I terminated (001) surface.

Kinetic Model of the Initial Stage of the Nanowire Growth

NASA Astrophysics Data System (ADS)

Filimonov, S. N.; Hervieu, Yu. Yu.

2018-03-01

A kinetic model of the formation of pyramid-like bulges (pedestals) at the bases of vertical nanowires is proposed. The formation of the pedestals at the early stage of the nanowire growth is assumed to be induced by a higher nucleation rate of two-dimensional islands under the catalyst droplet, as compared to the nucleation rate at the non-activated surface areas. Kinetics of the nucleation and propagation of the steps in the pyramid is described with a model of the multilayer growth, taking into account that the catalyst droplet at the nanowire top is a strong sink for adatoms. It is shown that the transition from the growth of the pyramid to the axial growth of the nanowire is possible if the appearance of a nucleus of the new layer under the catalyst droplet results in a partial dissolution of the underlying layer. In this case a segment of the nanowire sidewall is formed, preventing the lateral growth of the layers generated by the droplet.

SUPERSONIC SHEAR INSTABILITIES IN ASTROPHYSICAL BOUNDARY LAYERS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belyaev, Mikhail A.; Rafikov, Roman R., E-mail: rrr@astro.princeton.edu

Disk accretion onto weakly magnetized astrophysical objects often proceeds via a boundary layer (BL) that forms near the object's surface, in which the rotation speed of the accreted gas changes rapidly. Here, we study the initial stages of formation for such a BL around a white dwarf or a young star by examining the hydrodynamical shear instabilities that may initiate mixing and momentum transport between the two fluids of different densities moving supersonically with respect to each other. We find that an initially laminar BL is unstable to two different kinds of instabilities. One is an instability of a supersonicmore » vortex sheet (implying a discontinuous initial profile of the angular speed of the gas) in the presence of gravity, which we find to have a growth rate of order (but less than) the orbital frequency. The other is a sonic instability of a finite width, supersonic shear layer, which is similar to the Papaloizou-Pringle instability. It has a growth rate proportional to the shear inside the transition layer, which is of order the orbital frequency times the ratio of stellar radius to the BL thickness. For a BL that is thin compared to the radius of the star, the shear rate is much larger than the orbital frequency. Thus, we conclude that sonic instabilities play a dominant role in the initial stages of nonmagnetic BL formation and give rise to very fast mixing between disk gas and stellar fluid in the supersonic regime.« less

On the growth of turbulent regions in laminar boundary layers

NASA Technical Reports Server (NTRS)

Gad-El-hak, M.; Riley, J. J.; Blackwelder, R. F.

1981-01-01

Turbulent spots evolving in a laminar boundary layer on a nominally zero pressure gradient flat plate are investigated. The plate is towed through an 18 m water channel, using a carriage that rides on a continuously replenished oil film giving a vibrationless tow. Turbulent spots are initiated using a solenoid valve that ejects a small amount of fluid through a minute hole on the working surface. A novel visualization technique that utilizes fluorescent dye excited by a sheet of laser light is employed. Some new aspects of the growth and entrainment of turbulent spots, especially with regard to lateral growth, are inferred from the present experiments. To supplement the information on lateral spreading, a turbulent wedge created by placing a roughness element in the laminar boundary layer is also studied both visually and with probe measurements. The present results show that, in addition to entrainment, another mechanism is needed to explain the lateral growth characteristics of a turbulent region in a laminar boundary layer. This mechanism, termed growth by destabilization, appears to be a result of the turbulence destabilizing the unstable laminar boundary layer in its vicinity. To further understand the growth mechanisms, the turbulence in the spot is modulated using drag-reducing additives and salinity stratification.

Toward a Mechanistic Understanding of Vertical Growth of van der Waals Stacked 2D Materials: A Multiscale Model and Experiments.

PubMed

Ye, Han; Zhou, Jiadong; Er, Dequan; Price, Christopher C; Yu, Zhongyuan; Liu, Yumin; Lowengrub, John; Lou, Jun; Liu, Zheng; Shenoy, Vivek B

2017-12-26

Vertical stacking of monolayers via van der Waals (vdW) interaction opens promising routes toward engineering physical properties of two-dimensional (2D) materials and designing atomically thin devices. However, due to the lack of mechanistic understanding, challenges remain in the controlled fabrication of these structures via scalable methods such as chemical vapor deposition (CVD) onto substrates. In this paper, we develop a general multiscale model to describe the size evolution of 2D layers and predict the necessary growth conditions for vertical (initial + subsequent layers) versus in-plane lateral (monolayer) growth. An analytic thermodynamic criterion is established for subsequent layer growth that depends on the sizes of both layers, the vdW interaction energies, and the edge energy of 2D layers. Considering the time-dependent growth process, we find that temperature and adatom flux from vapor are the primary criteria affecting the self-assembled growth. The proposed model clearly demonstrates the distinct roles of thermodynamic and kinetic mechanisms governing the final structure. Our model agrees with experimental observations of various monolayer and bilayer transition metal dichalcogenides grown by CVD and provides a predictive framework to guide the fabrication of vertically stacked 2D materials.

Electrochemical growth of CoNi and Pt-CoNi soft magnetic composites on an alkanethiol monolayer-modified ITO substrate.

PubMed

Escalera-López, D; Gómez, E; Vallés, E

2015-07-07

CoNi and Pt-CoNi magnetic layers on indium-tin oxide (ITO) substrates modified by an alkanethiol self-assembled monolayer (SAM) have been electrochemically obtained as an initial stage to prepare semiconducting layer-SAM-magnetic layer hybrid structures. The best conditions to obtain the maximum compactness of adsorbed layers of dodecanethiol (C12-SH) on ITO substrate have been studied using contact angle, AFM, XPS and electrochemical tests. The electrochemical characterization (electrochemical probe or voltammetric response in blank solutions) is fundamental to ensure the maximum blocking of the substrate. Although the electrodeposition process on the SAM-modified ITO substrate is very slow if the blocking of the surface is significant, non-cracked metallic layers of CoNi, with or without a previously electrodeposited seed-layer of platinum, have been obtained by optimizing the deposition potentials. Initial nucleation is expected to take place at the pinhole defects of the C12-SH SAM, followed by a mushroom-like growth regime through the SAM interface that allows the formation of a continuous metallic layer electrically connected to the ITO surface. Due to the potential of the methodology, the preparation of patterned metallic deposits on ITO substrate using SAMs with different coverage as templates is feasible.

Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres

DOEpatents

Wang, George T.; Li, Qiming

2013-04-23

A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.

Structural Studies of the Initial Stages of Fluoride Epitaxy on Silicon and GERMANIUM(111)

NASA Astrophysics Data System (ADS)

Denlinger, Jonathan David

The epitaxial growth of ionic insulators on semiconductor substrates is of interest due to fundamental issues of interface bonding and structure as well as to potential technological applications. The initial stages of Group IIa fluoride insulator growth on (111) Si and Ge substrates by molecular beam epitaxy are studied with the in situ combination of X-ray Photoelectron Spectroscopy (XPS) and Diffraction (XPD). While XPS probes the electronic structure, XPD reveals atomic structure. In addition, low energy electron diffraction (LEED) is used to probe surface order and a separate study using X-ray standing wave (XSW) fluorescence reveals interface cation bonding sites. Following the formation of a chemically-reacted interface layer in CaF_2 epitaxy on Si(111), the morphology of the subsequent bulk layers is found to be dependent on substrate temperature and incident flux rate. At temperatures >=600 ^circC a transition from three -dimensional island formation at low flux to laminar growth at higher flux is observed with bulk- and interface-resolved XPD. At lower substrate temperatures, laminar growth is observed at all fluxes, but with different bulk nucleation behavior due to changes in the stoichiometry of the interface layer. This new observation of kinetic effects on the initial nucleation in CaF_2 epitaxy has important ramifications for the formation of thicker heterostructures for scientific or device applications. XPS and XPD are also used to identify for the first time, surface core-level species of Ca and F, and a secondary interface-shifted F Auger component arising from a second-layer site directly above interface-layer Ca atoms. The effects of lattice mismatch (from -3% to 8%) are investigated with various growths of Ca_{rm x}Sr _{rm 1-x}F_2 on Si and Ge (111) substrates. Triangulation of (111) and (220) XSW indicates a predominance of 3-fold hollow Sr bonding sites coexisting with 4-fold top sites for monolayers of SrF_2 on Si. XSW and LEED reveal a lateral discommensuration of the overlayer for lattice mismatches of >5% relative to the substrate. XPD also reveals a transition from single - to mixed-domains of overlayer crystallographic orientation for mismatches >=3.5%.

Studies of the Initial Stages of Epitaxial Growth of Germanium on Silicon

NASA Astrophysics Data System (ADS)

Krishnamurthy, Mohan

The epitaxial growth of ultra-thin films (< 1nm thick) of Ge on Si(100) has been studied in -situ in an Ultra High Vacuum-Scanning Transmission Electron Microscope. Ge was deposited on clean Si(100) using molecular beam techniques to study two types of growth processes, Molecular Beam Epitaxy (MBE) and Solid Phase MBE. Ge grows in the Stranski-Krastanov growth mode, forming islands after initial layer growth. This islanding transition has been studied with high spatial resolution biassed Secondary Electron Imaging and Auger spectroscopy and imaging. Ex -situ Transmission Electron Microscopy (TEM) and Reflection High Energy Diffraction (RHEED) were also used to characterize the transition. The islanding process and its subsequent evolution was monitored with the help of island size distributions, sensitive to islands above 2nm in size. The studies indicate that Ge forms islands in equilibrium with a 3 monolayer (ML) thick intermediate layer. These islands may initially grow coherently strained (dislocation free) with radii usually below 10nm under the conditions. The strain in these islands reduces the adatom sticking coefficient and strongly influences the microstructural evolution. The intermediate layer may grow metastably under certain conditions to as much as 7 ML before collapsing to its equilibrium form. The influence of three types of adatom sinks--strained islands, dislocated islands and contaminant particles have been studied. The contaminant particles are the strongest sinks, followed by dislocated islands and strained islands. Stepped (vicinal) surfaces (1^circ and 5 ^circ toward {110 }) had no significant influence possibly due to the steps being weak adatom sinks. The coarsening of Ge islands does not follow the Ostwald ripening model at the early stages and is influenced by the supersaturation in the intermediate layer and the strain in the coherent islands. A novel mechanism has been observed, where the larger (dislocated) islands grow at the expense of the unstable intermediate layer while the distribution of smaller (strained) islands is constant. This is possibly due to the lower sticking coefficient at the strained islands.

Growth and wall-transpiration control of nonlinear unsteady Görtler vortices forced by free-stream vortical disturbances

NASA Astrophysics Data System (ADS)

Marensi, Elena; Ricco, Pierre

2017-11-01

The generation, nonlinear evolution, and wall-transpiration control of unsteady Görtler vortices in an incompressible boundary layer over a concave plate is studied theoretically and numerically. Görtler rolls are initiated and driven by free-stream vortical perturbations of which only the low-frequency components are considered because they penetrate the most into the boundary layer. The formation and development of the disturbances are governed by the nonlinear unsteady boundary-region equations with the centrifugal force included. These equations are subject to appropriate initial and outer boundary conditions, which account for the influence of the upstream and free-stream forcing in a rigorous and mutually consistent manner. Numerical solutions show that the stabilizing effect on nonlinearity, which also occurs in flat-plate boundary layers, is significantly enhanced in the presence of centrifugal forces. Sufficiently downstream, the nonlinear vortices excited at different free-stream turbulence intensities Tu saturate at the same level, proving that the initial amplitude of the forcing becomes unimportant. At low Tu, the disturbance exhibits a quasi-exponential growth with the growth rate being intensified for more curved plates and for lower frequencies. At higher Tu, in the typical range of turbomachinery applications, the Görtler vortices do not undergo a modal stage as nonlinearity saturates rapidly, and the wall curvature does not affect the boundary-layer response. Good quantitative agreement with data from direct numerical simulations and experiments is obtained. Steady spanwise-uniform and spanwise-modulated zero-mass-flow-rate wall transpiration is shown to attenuate the growth of the Görtler vortices significantly. A novel modified version of the Fukagata-Iwamoto-Kasagi identity, used for the first time to study a transitional flow, reveals which terms in the streamwise momentum balance are mostly affected by the wall transpiration, thus offering insight into the increased nonlinear growth of the wall-shear stress.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorman, Brian P

Project Description: The general objective of the proposed research is to determine the kinetics and mechanisms of calcite reactions with saline waters over a wide range of saline water composition, pCO 2, and modest ranges in T and P. This will be accomplished by studying both reaction rates and solubility from changes in solution chemistry, and making nanoscale observations of calcite precipitate surface morphology and composition at the micro-to-nano-scale to provide an understanding of controlling reaction mechanisms and pathways. The specific objectives necessary to reach the general objective are: a) determination of how pCO 2, Ca 2+, ionic strength andmore » “foreign” ions influence reaction rates; and b) investigate the influence of these parameters on apparent kinetic solubility from dissolution and precipitation reactions. This information will clearly be central to the construction of reliable reaction-transport models to predict reservoir and formation response to increased CO 2 in saline waters. This program was initially collaborative with John Morse at Texas A&M, however his passing shortly after the beginning of this program resulted in abbreviated research time and effort. Summary of Results: Early studies using electron microscopy and spectroscopy indicated that carbonate precipitation from natural seawater (NSW) conditions onto aragonite substrates was mediated by a surface amorphous calcium carbonate layer. It was hypothesized that this ACC layer (observed after < 5days reaction time) was responsible for the abnormal reaction kinetics and also served as a metastable seed layer for growth of epitaxial aragonite. Further studies of the ACC formation mechanism indicated a strong dependence on the Mg concentration in solution. Subsequent studies at shorter times (10 hrs) on calcite substrates and in a wide range of supersaturation conditions did not indicate any ACC layer. Instead, an epitaxial layer by layer growth mechanism was confirmed by grazing incidence X-ray diffraction, µ-Raman spectroscopy, scanning electron microscopy, transmission electron microscopy, and electron diffraction. Extended time studies out to 45 days confirmed the epitaxial relationship of the overgrowth layer with the substrate. Under NSW conditions, overgrowths were found to have ~0.4 to 0.8 nm / hr growth rates and accommodating 4 at% Mg, resulting in a highly strained overgrowth layer. Following the initial layer by layer growth mechanism, the growth changes to Stranski-Krastanov type after a critical thickness of approximately 100 nm.« less

Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Gushchina, E. V.; Konenkova, E. V.; L'vova, T. V.; Panteleev, V. N.; Shcheglov, M. P.

2018-01-01

We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH4)2S aqueous solution leads to the columnar nucleation of hexagonal AlN crystals of two modifications rotated by 30° relative to each other. Based on the sulfide treatment, a simple method of oxide removal from and preparation of Si(100) substrate surface is developed that can be used for the epitaxial growth of group-III nitride layers.

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

Most-Critical Transient Disturbances in an Incompressible Flat-Plate Boundary Layer

NASA Astrophysics Data System (ADS)

Monschke, Jason; White, Edward

2015-11-01

Transient growth is a linear disturbance growth mechanism that plays a key role in roughness-induced boundary-layer transition. It occurs when superposed stable, non-orthogonal continuous spectrum modes experience algebraic disturbance growth followed by exponential decay. Algebraic disturbance growth can modify the basic state making it susceptible to secondary instabilities rapidly leading to transition. Optimal disturbance theory was developed to model the most-dangerous disturbances. However, evidence suggests roughness-induced transient growth is sub-optimal yet leads to transition earlier than optimal theory suggests. This research computes initial disturbances most unstable to secondary instabilities to further develop the applicability of transient growth theory to surface roughness. The main approach is using nonlinear adjoint optimization with solutions of the parabolized Navier-Stokes and BiGlobal stability equations. Two objective functions were considered: disturbance kinetic energy growth and sinuous instability growth rate. The first objective function was used as validation of the optimization method. Counter-rotating streamwise vortices located low in the boundary layer maximize the sinuous instability growth rate. The authors would like to acknowledge NASA and the AFOSR for funding this work through AFOSR Grant FA9550-09-1-0341.

Evolution of crystal structure during the initial stages of ZnO atomic layer deposition

DOE PAGES

Boichot, R.; Tian, L.; Richard, M. -I.; ...

2016-01-05

In this study, a complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer deposition. Focusing on the first 10 cycles of growth, we observe that the structure formed during the coalescence stage largely determines the overall microstructure of the film. Furthermore, by comparing ZnO growth on silicon with a native oxide with that on Al 2O 3(001), we find that even with lattice-mismatched substrates and low deposition temperatures, the crystalline texture of the films depend strongly on the nature of the interfacial bonds.

In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chaumeton, Florian, E-mail: florian.chaumeton@cemes.fr; Gauthier, Sébastien, E-mail: gauthier@cemes.fr; Martrou, David, E-mail: david.martrou@cemes.fr

Nitride wide-band-gap semiconductors are used to make high power electronic devices or efficient light sources. The performance of GaN-based devices is directly linked to the initial AlN buffer layer. During the last twenty years of research on nitride growth, only few information on the AlN surface quality have been obtained, mainly by ex-situ characterization techniques. Thanks to a Non Contact Atomic Force Microscope (NC-AFM) connected under ultra high vacuum (UHV) to a dedicated molecular beam epitaxy (MBE) chamber, the surface of AlN(0001) thin films grown on Si(111) and 4H-SiC(0001) substrates has been characterized. These experiments give access to a quantitativemore » determination of the density of screw and edge dislocations at the surface. The layers were also characterized by ex-situ SEM to observe the largest defects such as relaxation dislocations and hillocks. The influence of the growth parameters (substrate temperature, growth speed, III/V ratio) and of the initial substrate preparation on the dislocation density was also investigated. On Si(111), the large in-plane lattice mismatch with AlN(0001) (19%) induces a high dislocation density ranging from 6 to 12×10{sup 10}/cm{sup 2} depending on the growth conditions. On 4H-SiC(0001) (1% mismatch with AlN(0001)), the dislocation density decreases to less than 10{sup 10}/cm{sup 2}, but hillocks appear, depending on the initial SiC(0001) reconstruction. The use of a very low growth rate of 10 nm/h at the beginning of the growth process allows to decrease the dislocation density below 2 × 10{sup 9}/cm{sup 2}.« less

Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars.

PubMed

Skibitzki, Oliver; Capellini, Giovanni; Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Schroeder, Thomas; Ballabio, Andrea; Bergamaschini, Roberto; Salvalaglio, Marco; Miglio, Leo; Montalenti, Francesco

2016-10-05

In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.

Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herz, A., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Franz, A.; Theska, F.

2016-03-15

Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to themore » presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.« less

AFM investigation of effect of absorbed water layer structure on growth mechanism of octadecyltrichlorosilane self-assembled monolayer on oxidized silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Shaowei; Zheng, Yanjun, E-mail: zhengyj@cup.edu.cn; Chen, Changfeng

2016-06-28

The growth mechanism of an octadecyltrichlorosilane (OTS) self-assembled monolayer on a silicon oxide surface at various relative humidities has been investigated. Atomic force microscopy images show that excess water may actually hinder the nucleation and growth of OTS islands. A moderate amount of water is favorable for the nucleation and growth of OTS islands in the initial stage; however, the completion of the monolayer is very slow in the final stage. The growth of OTS islands on a low-water-content surface maintains a relatively constant speed and requires the least amount of time. The mobility of water molecules is thought tomore » play an important role in the OTS monolayers, and a low-mobility water layer provides a steady condition for OTS monolayer growth.« less

AFM investigation of effect of absorbed water layer structure on growth mechanism of octadecyltrichlorosilane self-assembled monolayer on oxidized silicon

NASA Astrophysics Data System (ADS)

Li, Shaowei; Zheng, Yanjun; Chen, Changfeng

2016-06-01

The growth mechanism of an octadecyltrichlorosilane (OTS) self-assembled monolayer on a silicon oxide surface at various relative humidities has been investigated. Atomic force microscopy images show that excess water may actually hinder the nucleation and growth of OTS islands. A moderate amount of water is favorable for the nucleation and growth of OTS islands in the initial stage; however, the completion of the monolayer is very slow in the final stage. The growth of OTS islands on a low-water-content surface maintains a relatively constant speed and requires the least amount of time. The mobility of water molecules is thought to play an important role in the OTS monolayers, and a low-mobility water layer provides a steady condition for OTS monolayer growth.

Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain

DOE PAGES

Zhang, Wenrui; Li, Mingtao; Chen, Aiping; ...

2016-06-13

Two-dimensional (2D) nanostructures emerge as one of leading topics in fundamental materials science and could enable next generation nanoelectronic devices. Beyond graphene and molybdenum disulphide, layered complex oxides are another large group of promising 2D candidates because of their strong interplay of intrinsic charge, spin, orbital and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials exhibiting new phenomena beyond their conventional form. Here we report the strain-driven self-assembly of Bismuth-based supercells (SC) with a 2D layered structure, and elucidate the fundamental growth mechanism with combined experimental tools and first-principles calculations.more » The study revealed that the new layered structures were formed by the strain-enabled self-assembled atomic layer stacking, i.e., alternative growth of Bi 2O 2 layer and [Fe 0.5Mn 0.5]O 6 layer. The strain-driven approach is further demonstrated in other SC candidate systems with promising room-temperature multiferroic properties. This well-integrated theoretical and experimental study inspired by the Materials Genome Initiatives opens up a new avenue in searching and designing novel 2D layered complex oxides with enormous promises.« less

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Ive, Tommy

2015-09-01

Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

Quality improvements of ZnxCdyMg1-x-ySe layers grown on InP substrates by a thin ZnCdSe interfacial layer

NASA Astrophysics Data System (ADS)

Zeng, L.; Yang, B. X.; Tamargo, M. C.; Snoeks, E.; Zhao, L.

1998-03-01

The quality of lattice-matched ZnxCdyMg1-x-ySe epitaxial layers grown on (001) InP substrates with a III-V buffer layer has been improved by initially growing a ZnCdSe interfacial layer (50 Å) at low temperature. The widths of double crystal x-ray rocking curves for ZnxCdyMg1-x-ySe epilayers with band gaps as high as 3.05 eV were reduced to about 70 arcsec. The defect density evaluated from etch pit density and plan-view transmission electron microscopy measurements was reduced by two orders of magnitude, to 106-107cm-2. The photoluminescence band edge emission became more symmetric and slightly narrower. It is proposed that an initial two-dimensional growth mode has been achieved by incorporating such a lattice-matched ZnCdSe layer.

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer.

PubMed

Schumann, T; Gotschke, T; Limbach, F; Stoica, T; Calarco, R

2011-03-04

GaN nanowires (NWs) were grown selectively in holes of a patterned silicon oxide mask, by rf-plasma-assisted molecular beam epitaxy (PAMBE), without any metal catalyst. The oxide was deposited on a thin AlN buffer layer previously grown on a Si(111) substrate. Regular arrays of holes in the oxide layer were obtained using standard e-beam lithography. The selectivity of growth has been studied varying the substrate temperature, gallium beam equivalent pressure and patterning layout. Adjusting the growth parameters, GaN NWs can be selectively grown in the holes of the patterned oxide with complete suppression of the parasitic growth in between the holes. The occupation probability of a hole with a single or multiple NWs depends strongly on its diameter. The selectively grown GaN NWs have one common crystallographic orientation with respect to the Si(111) substrate via the AlN buffer layer, as proven by x-ray diffraction (XRD) measurements. Based on the experimental data, we present a schematic model of the GaN NW formation in which a GaN pedestal is initially grown in the hole.

Surfactant properties of oxygen in the homoepitaxial growth of Fe: a MDS study

NASA Astrophysics Data System (ADS)

Moroni, R.; Bisio, F.; Gussoni, A.; Canepa, M.; Mattera, L.

2001-06-01

The growth of ultra thin iron films (up to a thickness of 5-6 ML) on O(1×1)-Fe/Ag(0 0 1) has been investigated by means of He reflectivity ( RHe) and metastable de-excitation spectroscopy. The presence of oxygen induces a quasi-ideal layer-by-layer growth at variance with the case of the homoepitaxial growth of iron on Fe(0 0 1). The surface electronic density of states suddenly changes upon the deposition of the first half of a monolayer. After the sudden change in the first stages of the growth, the surface density of states of both O 2p and Fe 3d states remains essentially unchanged, irrespectively of the thickness of the deposited film. This provides a clear indication that oxygen floats at the surface acting as a surfactant for the growth of iron on O(1×1)-Fe/Ag(0 0 1). The stationary fraction of oxygen that remains on the topmost layer as growth proceeds depends on the substrate temperature. Post-growth annealing up to 650 K restores the initial coverage of oxygen and the ordered O(1×1) phase.

Wetting in a phase separating polymer blend film: quench depth dependence

PubMed

Geoghegan; Ermer; Jungst; Krausch; Brenn

2000-07-01

We have used 3He nuclear reaction analysis to measure the growth of the wetting layer as a function of immiscibility (quench depth) in blends of deuterated polystyrene and poly(alpha-methylstyrene) undergoing surface-directed spinodal decomposition. We are able to identify three different laws for the surface layer growth with time t. For the deepest quenches, the forces driving phase separation dominate (high thermal noise) and the surface layer grows with a t(1/3) coarsening behavior. For shallower quenches, a logarithmic behavior is observed, indicative of a low noise system. The crossover from logarithmic growth to t(1/3) behavior is close to where a wetting transition should occur. We also discuss the possibility of a "plating transition" extending complete wetting to deeper quenches by comparing the surface field with thermal noise. For the shallowest quench, a critical blend exhibits a t(1/2) behavior. We believe this surface layer growth is driven by the curvature of domains at the surface and shows how the wetting layer forms in the absence of thermal noise. This suggestion is reinforced by a slower growth at later times, indicating that the surface domains have coalesced. Atomic force microscopy measurements in each of the different regimes further support the above. The surface in the region of t(1/3) growth is initially somewhat rougher than that in the regime of logarithmic growth, indicating the existence of droplets at the surface.

Strain relaxation in (0001) AlN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Bourret, Alain; Adelmann, Christoph; Daudin, Bruno; Rouvière, Jean-Luc; Feuillet, Guy; Mula, Guido

2001-06-01

The strain-relaxation phenomena during the early stages of plasma-assisted molecular-beam epitaxy growth of lattice-mismatched wurtzite (0001) AlN/GaN heterostructures have been studied by real-time recording of the in situ reflection high-energy electron diffraction (RHEED), ex situ transmission electron microscopy (TEM), and atomic-force microscopy. A pseudo-two-dimensional layer-by-layer growth is observed at substrate temperatures of 640-660 °C, as evidenced by RHEED and TEM. However, the variation of the in-plane lattice parameter during growth and after growth has been found to be complex. Three steps have been seen during the deposition of lattice-mismatched AlN and GaN layers: they were interpreted as the succession of the formation of flat platelets, 3-6 monolayers high (0.8-1.5 nm) and 10-20 nm in diameter, their partial coalescence, and gradual dislocation introduction. Platelet formation leads to elastic relaxation as high as 1.8%, i.e., a considerable part of the AlN/GaN lattice mismatch of 2.4%, and can be reversible. Platelets are always observed during the initial stages of growth and are almost insensitive to the metal/N ratio. In contrast, platelet coalescence and dislocation introduction are very dependent on the metal/N ratio: no coalescence occurs and the dislocation introduction rate is higher under N-rich conditions. In all cases, the misfit dislocation density, as measured by the irreversible relaxation, is initially of the order of 7×1011 cm-2 and decreases exponentially with the layer thickness. These results are interpreted in the framework of a model that emphasizes the important role of the flat platelets for dislocation nucleation.

Bursting at the Seams: Rippled Monolayer Bismuth on NbSe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Alan; Adamo, Carolina; Jia, Shuang

Bismuth, one of the heaviest semimetals in nature, ignited the interest of the materials-physics community for its potential impact on topological quantum-material systems that utilize its strong spin-orbit coupling (SOC) and unique orbital hybridization. In particular, recent theoretical predictions of unique topological and superconducting properties of thin bismuth films and interfaces prompted intense research on the growth of sub- to a few monolayers of bismuth on different substrates. Similar to bulk rhombohedral bismuth, the initial growth of bismuth films on most substrates results in buckled bilayers that either grow in the (111) or (110) directions, with a lattice constant closemore » to that of bulk Bi. By contrast, in this paper we show a new growth pattern for bismuth monolayers on NbSe 2. We find that the initial growth of Bi can form a strongly bonded commensurate layer, resulting in a compressively strained two-dimensional triangular lattice. A unique pattern of 1D ripples and domain walls is observed. The single layer of bismuth also introduces strong marks on the electronic properties at the surface.« less

Bursting at the Seams: Rippled Monolayer Bismuth on NbSe 2

DOE PAGES

Fang, Alan; Adamo, Carolina; Jia, Shuang; ...

2018-04-13

Bismuth, one of the heaviest semimetals in nature, ignited the interest of the materials-physics community for its potential impact on topological quantum-material systems that utilize its strong spin-orbit coupling (SOC) and unique orbital hybridization. In particular, recent theoretical predictions of unique topological and superconducting properties of thin bismuth films and interfaces prompted intense research on the growth of sub- to a few monolayers of bismuth on different substrates. Similar to bulk rhombohedral bismuth, the initial growth of bismuth films on most substrates results in buckled bilayers that either grow in the (111) or (110) directions, with a lattice constant closemore » to that of bulk Bi. By contrast, in this paper we show a new growth pattern for bismuth monolayers on NbSe 2. We find that the initial growth of Bi can form a strongly bonded commensurate layer, resulting in a compressively strained two-dimensional triangular lattice. A unique pattern of 1D ripples and domain walls is observed. The single layer of bismuth also introduces strong marks on the electronic properties at the surface.« less

Auger electron diffraction study of the initial stage of Ge heteroepitaxy on Si(001)

NASA Astrophysics Data System (ADS)

Sasaki, M.; Abukawa, T.; Yeom, H. W.; Yamada, M.; Suzuki, S.; Sato, S.; Kono, S.

1994-12-01

The initial stage of pure and surfactant (Sb)-assisted Ge growth on a Si(001) surface has been studied by Auger electron diffraction (AED) and X-ray photoelectron diffraction (XPD). A single-domain Si(001)2 × 1 substrate was used to avoid the ambiguity arising from the usual double-domain substrate. For the pure Ge growth, 1 monolayer of Ge was deposited onto the room temperature substrate followed by annealing at 350°C-600°C, which appeared to have (1 × 2) periodicity by LEED. Ge LMM AED patterns were measured to find that a substantial amount of Ge atoms diffuse to the bulk Si positions up to the fourth layer at least. For the Sb-assisted Ge growth, a Sb(1 × 2)/Si(001) surface was first prepared and Sb 3d XPD patterns were measured to find that Sb forms dimers on the substrate. 1 ML of Ge was deposited onto the Sb(1 × 2)/Si(001) surface and then the surface was annealed at 600°C. Ge LMM AED and Sb 3d XPD patterns measured for this surface showed that surfactant Sb atoms are indeed present on the first layer forming dimers and that Ge atoms are present mainly on the second layer with a substantial amount of Ge diffused into the third and fourth layers.

Compressibility effects in the shear layer over a rectangular cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beresh, Steven J.; Wagner, Justin L.; Casper, Katya M.

2016-10-26

we studied the influence of compressibility on the shear layer over a rectangular cavity of variable width in a free stream Mach number range of 0.6–2.5 using particle image velocimetry data in the streamwise centre plane. As the Mach number increases, the vertical component of the turbulence intensity diminishes modestly in the widest cavity, but the two narrower cavities show a more substantial drop in all three components as well as the turbulent shear stress. Furthermore, this contrasts with canonical free shear layers, which show significant reductions in only the vertical component and the turbulent shear stress due to compressibility.more » The vorticity thickness of the cavity shear layer grows rapidly as it initially develops, then transitions to a slower growth rate once its instability saturates. When normalized by their estimated incompressible values, the growth rates prior to saturation display the classic compressibility effect of suppression as the convective Mach number rises, in excellent agreement with comparable free shear layer data. The specific trend of the reduction in growth rate due to compressibility is modified by the cavity width.« less

Simulation of fundamental atomization mechanisms in fuel sprays

NASA Technical Reports Server (NTRS)

Childs, Robert, E.; Mansour, Nagi N.

1988-01-01

Growth of instabilities on the liquid/gas interface in the initial region of fuel sprays is studied by means of numerical simulations. The simulations are based on solutions of the variable-density incompressible Navier-Stokes equations, which are obtained with a new numerical algorithm. The simulations give good agreement with analytical results for the instabilities on a liquid cylinder induced by surface tension and wind-induced instabilities. The effects of boundary layers on the wind-induced instabilities are investigated. It is found that a boundary layer reduces the growth rate for a single interface, and a comparison with inviscid theory suggests that boundary layer effects may be significantly more important than surface tension effects. The results yield a better estimate than inviscid theory for the drop sizes as reported for diesel sprays. Results for the planar jet show that boundary layer effects hasten the growth of Squire's 'symmetric' mode, which is responsible for jet disintegration. This result helps explain the rapid atomization which occurs in swirl and air-blast atomizers.

Homoepitaxial electrodeposition on reconstructed and unreconstructed Au(100): An in-situ STM study

NASA Astrophysics Data System (ADS)

Al-Shakran, Mohammad; Kibler, Ludwig A.; Jacob, Timo

2015-01-01

A study of homoepitaxial electrodeposition on reconstructed and unreconstructed Au(100) surfaces is presented. The growth behavior has been investigated by in-situ scanning tunneling microscopy for Au(100) in contact with 0.1 M H2SO4 + 5 μM K[AuCl4]. It is shown that the initial surface structure is decisive for the emerging Au structures, giving rise to clearly different surface morphologies for electro-crystallization of Au on the unreconstructed and on the reconstructed Au(100) surface. A layer-by-layer growth is observed at more positive potentials for unreconstructed Au(100). The electrodeposition proceeds initially by the formation of Au islands followed by island coalescence due to the high mobility of surface atoms. Monatomic recessed stripes are formed as a result of the coalescence of deposited Au islands. At more negative potentials, the growth of Au proceeds strongly anisotropic on the reconstructed surface by the formation of reconstructed elongated islands.

Native oxide formation on pentagonal copper nanowires: A TEM study

NASA Astrophysics Data System (ADS)

Hajimammadov, Rashad; Mohl, Melinda; Kordas, Krisztian

2018-06-01

Hydrothermally synthesized copper nanowires were allowed to oxidize in air at room temperature and 30% constant humidity for the period of 22 days. The growth of native oxide layer was followed up by high-resolution transmission electron microscopy and diffraction to reveal and understand the kinetics of the oxidation process. Copper oxides appear in the form of differently oriented crystalline phases around the metallic core as a shell-like layer (Cu2O) and as nanoscopic islands (CuO) on the top of that. Time dependent oxide thickness data suggests that oxidation follows the field-assisted growth model at the beginning of the process, as practically immediately an oxide layer of ∼2.8 nm thickness develops on the surface. However, after this initial rapid growth, the local field attenuates and the classical parabolic diffusion limited growth plays the main role in the oxidation. Because of the single crystal facets on the side surface of penta-twinned Cu nanowires, the oxidation rate in the diffusion limited regime is lower than in polycrystalline films.

Comparison of the initial development of shear layers in two-dimensional and axisymmetric ejector configurations

NASA Technical Reports Server (NTRS)

Dufflocq, M.; Benjamin, M. A.; Roan, V. P.

1993-01-01

A two-phase experimental investigation designed to study the development of shear layers in axisymmetric and two-dimensional single-nozzle ejectors has been completed. In this study, combinations of similar and dissimilar gases were used as the supersonic primary and subsonic secondary. Test cases included combinations of air/air, argon/air and helium/air as the supersonic primary and subsonic secondary, respectively. Similar flow conditions were studied for each ejector configuration. Mixing of the gases occurred in a constant-area tube, where the inlet pressure was maintained at 34.5 kPa. The cases studied resulted in convective Mach numbers that range between 0.06 and 1.9. The data gathered shows differences between the initial shear-layer development for the two ejector geometries, and also between the different test cases studied for each ejector configuration. The measured growth rates for the axisymmetric ejector are more than twice those measured for the two-dimensional ejector. However, in both cases the results show that compressibility has a reducing effect on the growth rate. Further, in the region immediately after the inlet to the mixing tube, compressibility seems to affect the ejector shear layers in a manner similar to that of two-stream two-dimensional mixing layers.

Novel approach for III-N on Si (111) templates fabrication by low-temperature PA MBE using porous Si layer

NASA Astrophysics Data System (ADS)

Zolotukhin, D.; Seredin, P.; Lenshin, A.; Goloshchapov, D.; Mizerov, A.

2017-11-01

We report on successful growth of GaN nanorods by low-temperature plasma-assisted molecular beam epitaxy on a Si(111) substrate with and without preformed thin porous Si layer (por-Si). The deposited GaN initially forms islands which act as a seed for the wires. Porous structure of the por-Si layer helps to control nucleation islands sizes and achieve homogeneous distribution of the nanorods diameters. In addition 850 nm-thick crack-free GaN layer was formed on Si(111) substrate with preformed por-Si layer.

Direct Numerical Simulation of Transition Due to Traveling Crossflow Vortices

NASA Technical Reports Server (NTRS)

Li, Fei; Choudhari, Meelan M.; Duan, Lian

2016-01-01

Previous simulations of laminar breakdown mechanisms associated with stationary crossflow instability over a realistic swept-wing configuration are extended to investigate the alternate scenario of transition due to secondary instability of traveling crossflow modes. Earlier analyses based on secondary instability theory and parabolized stability equations have shown that this alternate scenario is viable when the initial amplitude of the most amplified mode of the traveling crossflow instability is greater than approximately 0.03 times the initial amplitude of the most amplified stationary mode. The linear growth predictions based on the secondary instability theory and parabolized stability equations agree well with the direct numerical simulation. Nonlinear effects are initially stabilizing but subsequently lead to a rapid growth followed by the onset of transition when the amplitude of the secondary disturbance exceeds a threshold value. Similar to the breakdown of stationary vortices, the transition zone is rather short and the boundary layer becomes completely turbulent across a distance of less than 15 times the boundary layer thickness at the completion of transition.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Osman, T.M.; Lewandowski, J.J.

Recently, laminate structures have been investigated as a method for enhancing the fracture resistance of discontinuously reinforced aluminum (DRA) materials. Laminated DRA materials have been constructed which contain alternating layers of DRA material and monolithic aluminum. Initiation in these laminates has been found to preferentially occur in the DRA layers. After initiation, stable crack growth is produced in the DRA material via a crack bridging mechanism in which the ductile aluminum ligaments in the crack wake serve to reduce the driving force for propagation in the DRA layer. In a manner similar to that of Kaufman and Goolsby, it wasmore » proposed that the initiation toughness of the DRA laminates may be improved if the thickness of the DRA layers was reduced. The goal of this study was to investigate the influence of thickness on the toughness of a DRA material based upon a transition from plane strain to plane stress conditions and how this transition may affect the fracture resistance of laminated DRA materials. The following sections document initial attempts to determine the influence of DRA thickness on toughness both in conventional DRA materials and laminated DRA materials.« less

Influence of Substrate Bonding and Surface Morphology on Dynamic Organic Layer Growth: Perylenetetracarboxylic Dianhydride on Au(111).

PubMed

Schmidt, Thomas; Marchetto, Helder; Groh, Ullrich; Fink, Rainer H; Freund, Hans-Joachim; Umbach, Eberhard

2018-05-15

We investigated the dynamics of the initial growth of the first epitaxial layers of perylenetetracarboxylic dianhydride (PTCDA) on the Au(111) surface with high lateral resolution using the aberration-corrected spectro-microscope SMART. With this instrument, we could simultaneously study the different adsorption behaviors and layer growth on various surface areas consisting of either a distribution of flat (111) terraces, separated by single atomic steps ("ideal surface"), or on areas with a high density of step bunches and defects ("realistic surface"). The combined use of photoemission electron microscopy, low-energy electron microscopy, and μ-spot X-ray absorption provided a wealth of new information, showing that the growth of the archetype molecule PTCDA not only has similarities but also has significant differences when comparing Au(111) and Ag(111) substrate surfaces. For instance, under otherwise identical preparation conditions, we observed different growth mechanisms on different surface regions, depending on the density of step bunches. In addition, we studied the spatially resolved desorption behavior which also depends on the substrate morphology.

Optimal Growth in Hypersonic Boundary Layers

NASA Technical Reports Server (NTRS)

Paredes, Pedro; Choudhari, Meelan M.; Li, Fei; Chang, Chau-Lyan

2016-01-01

The linear form of the parabolized linear stability equations is used in a variational approach to extend the previous body of results for the optimal, nonmodal disturbance growth in boundary-layer flows. This paper investigates the optimal growth characteristics in the hypersonic Mach number regime without any high-enthalpy effects. The influence of wall cooling is studied, with particular emphasis on the role of the initial disturbance location and the value of the spanwise wave number that leads to the maximum energy growth up to a specified location. Unlike previous predictions that used a basic state obtained from a self-similar solution to the boundary-layer equations, mean flow solutions based on the full Navier-Stokes equations are used in select cases to help account for the viscous- inviscid interaction near the leading edge of the plate and for the weak shock wave emanating from that region. Using the full Navier-Stokes mean flow is shown to result in further reduction with Mach number in the magnitude of optimal growth relative to the predictions based on the self-similar approximation to the base flow.

Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers

NASA Astrophysics Data System (ADS)

Veloso, A.; Freitas, P. P.; Wei, P.; Barradas, N. P.; Soares, J. C.; Almeida, B.; Sousa, J. B.

2000-08-01

Bottom-pinned Mn83Ir17 spin valves with enhanced specular scattering were fabricated, showing magnetoresistance (MR) values up to 13.6%, lower sheet resistance R□ and higher ΔR□. Two nano-oxide layers (NOL) are grown on both sides of the CoFe/Cu/CoFe spin valve structure by natural oxidation or remote plasma oxidation of the starting CoFe layer. Maximum MR enhancement is obtained after just 1 min plasma oxidation. Rutherford backscattering analysis shows that a 15±2 Å oxide layer grows at the expense of the initial (prior to oxidation) CoFe layer, with ˜12% reduction of the initial 40 Å CoFe thickness. X-ray reflectometry indicates that Kiessig fringes become better defined after NOL growth, indicating smoother inner interfaces, in agreement with the observed decrease of the spin valve ferromagnetic Néel coupling.

A three-dimensional simulation of transition and early turbulence in a time-developing mixing layer

NASA Technical Reports Server (NTRS)

Cain, A. B.; Reynolds, W. C.; Ferziger, J. H.

1981-01-01

The physics of the transition and early turbulence regimes in the time developing mixing layer was investigated. The sensitivity of the mixing layer to the disturbance field of the initial condition is considered. The growth of the momentum thickness, the mean velocity profile, the turbulence kinetic energy, the Reynolds stresses, the anisotropy tensor, and particle track pictures of computations are all examined in an effort to better understand the physics of these regimes. The amplitude, spectrum shape, and random phases of the initial disturbance field were varied. A scheme of generating discrete orthogonal function expansions on some nonuniform grids was developed. All cases address the early or near field of the mixing layer. The most significant result shows that the secondary instability of the mixing layer is produced by spanwise variations in the straining field of the primary vortex structures.

Microstructural Development during Directional Solidification of Peritectic Alloys

NASA Technical Reports Server (NTRS)

Lograsso, Thomas A.

1996-01-01

A thorough understanding of the microstructures produced through solidification in peritectic systems has yet to be achieved, even though a large number of industrially and scientifically significant materials are in this class. One type of microstructure frequently observed during directional solidification consists of alternating layers of primary solid and peritectic solid oriented perpendicular to the growth direction. This layer formation is usually reported for alloy compositions within the two-phase region of the peritectic isotherm and for temperature gradient and growth rate conditions that result in a planar solid-liquid interface. Layered growth in peritectic alloys has not previously been characterized on a quantitative basis, nor has a mechanism for its formation been verified. The mechanisms that have been proposed for layer formation can be categorized as either extrinsic or intrinsic to the alloy system. The extrinsic mechanisms rely on externally induced perturbations to the system for layer formation, such as temperature oscillations, growth velocity variations, or vibrations. The intrinsic mechanisms approach layer formation as an alternative type of two phase growth that is inherent for certain peritectic systems and solidification conditions. Convective mixing of the liquid is an additional variable which can strongly influence the development and appearance of layers due to the requisite slow growth rate. The first quantitative description of layer formation is a model recently developed by Trivedi based on the intrinsic mechanism of cyclic accumulation and depiction of solute in the liquid ahead of the interface, linked to repeated nucleation events in the absence of convection. The objective of this research is to characterize the layered microstructures developed during ground-based experiments in which external influences have been minimized as much as possible and to compare these results to the current the model. Also, the differences between intrinsic and externally influenced layer formation were explored. The choice of alloy system is critical to a study of the formation of layered microstructures. The ideal system would have a well-characterized phase diagram, equal densities of both elements in the liquid state to minimize compositionally-driven convective flows, a low peritectic temperature to simplify directional solidification and the achievement of a high temperature gradient in the liquid, a broad composition range for the peritectic reaction, and a reasonable hardness at room temperature to facilitate handling and metallographic preparation. The In-Sn system was selected initially due to a very low peritectic temperature and the nearly equal densities of In and Sn in the liquid state. Since the In-rich peritectic reaction had apparently not been utilized previously for solidification research, experiments were conducted to check the phase diagram in the region of interest. The alloys in this system proved to be difficult to handle and prepare in bulk form with the equipment available, so experiments were initiated with the Sn-Cd system. Layered microstructures had been observed previously in Sn-Cd.

Towards Understanding the Mechanism of Receptivity and Bypass Dynamics in Laminar Boundary Layers

NASA Technical Reports Server (NTRS)

Lasseigne, D. G.; Criminale, W. O.; Joslin, R. D.; Jackson, T. L.

1999-01-01

Three problems concerning laminar-turbulent transition are addressed by solving a series of initial value problems. The first problem is the calculation of resonance within the continuous spectrum of the Blasius boundary layer. The second is calculation of the growth of Tollmien-Schlichting waves that are a direct result of disturbances that only lie outside of the boundary layer. And, the third problem is the calculation of non-parallel effects. Together, these problems represent a unified approach to the study of freestream disturbance effects that could lead to transition. Solutions to the temporal, initial-value problem with an inhomogeneous forcing term imposed upon the flow is sought. By solving a series of problems, it is shown that: A transient disturbance lying completely outside of the boundary layer can lead to the growth of an unstable Tollmien-Schlichting wave. A resonance with the continuous spectrum leads to strong amplification that may provide a mechanism for bypass transition once nonlinear effects are considered. A disturbance with a very weak unstable Tollmien-Schlichting wave can lead to a much stronger Tollmien-Schlichting wave downstream, if the original disturbance has a significant portion of its energy in the continuum modes.

Oxidation and the Effects of High Temperature Exposures on Notched Fatigue Life of an Advanced Powder Metallurgy Disk Superalloy

NASA Technical Reports Server (NTRS)

Sudbrack, Chantal K.; Draper, Susan L.; Gorman, Timothy T.; Telesman, Jack; Gab, Timothy P.; Hull, David R.

2012-01-01

Oxidation and the effects of high temperature exposures on notched fatigue life were considered for a powder metallurgy processed supersolvus heat-treated ME3 disk superalloy. The isothermal static oxidation response at 704 C, 760 C, and 815 C was consistent with other chromia forming nickel-based superalloys: a TiO2-Cr2O3 external oxide formed with a branched Al2O3 internal subscale that extended into a recrystallized - dissolution layer. These surface changes can potentially impact disk durability, making layer growth rates important. Growth of the external scales and dissolution layers followed a cubic rate law, while Al2O3 subscales followed a parabolic rate law. Cr- rich M23C6 carbides at the grain boundaries dissolved to help sustain Cr2O3 growth to depths about 12 times thicker than the scale. The effect of prior exposures was examined through notched low cycle fatigue tests performed to failure in air at 704 C. Prior exposures led to pronounced debits of up to 99 % in fatigue life, where fatigue life decreased inversely with exposure time. Exposures that produced roughly equivalent 1 m thick external scales at the various isotherms showed statistically equivalent fatigue lives, establishing that surface damage drives fatigue debit, not exposure temperature. Fractographic evaluation indicated the failure mode for the pre-exposed specimens involved surface crack initiations that shifted with exposure from predominately single intergranular initiations with transgranular propagation to multi-initiations from the cracked external oxide with intergranular propagation. Weakened grain boundaries at the surface resulting from the M23C6 carbide dissolution are partially responsible for the intergranular cracking. Removing the scale and subscale while leaving a layer where M23C6 carbides were dissolved did not lead to a significant fatigue life improvement, however, also removing the M23C6 carbide dissolution layer led to nearly full recovery of life, with a transgranular initiation typical to that observed in unexposed specimens.

Developmental patterning of the sub-epidermal integument cell layer in Arabidopsis seeds

PubMed Central

Coen, Olivier; Fiume, Elisa; Xu, Wenjia; De Vos, Delphine; Lu, Jing; Pechoux, Christine; Lepiniec, Loïc

2017-01-01

Angiosperm seed development is a paradigm of tissue cross-talk. Proper seed formation requires spatial and temporal coordination of the fertilization products – embryo and endosperm – and the surrounding seed coat maternal tissue. In early Arabidopsis seed development, all seed integuments were thought to respond homogenously to endosperm growth. Here, we show that the sub-epidermal integument cell layer has a unique developmental program. We characterized the cell patterning of the sub-epidermal integument cell layer, which initiates a previously uncharacterized extra cell layer, and identified TRANSPARENT TESTA 16 and SEEDSTICK MADS box transcription factors as master regulators of its polar development and cell architecture. Our data indicate that the differentiation of the sub-epidermal integument cell layer is insensitive to endosperm growth alone and to the repressive mechanism established by FERTILIZATION INDEPENDENT ENDOSPERM and MULTICOPY SUPPRESSOR OF IRA1 Polycomb group proteins. This work demonstrates the different responses of epidermal and sub-epidermal integument cell layers to fertilization. PMID:28348169

3D fold growth rates in transpressional tectonic settings

NASA Astrophysics Data System (ADS)

Frehner, Marcel

2015-04-01

Geological folds are inherently three-dimensional (3D) structures; hence, they also grow in 3D. In this study, fold growth in all three dimensions is quantified numerically using a finite-element algorithm for simulating deformation of Newtonian media in 3D. The presented study is an extension and generalization of the work presented in Frehner (2014), which only considered unidirectional layer-parallel compression. In contrast, the full range from strike slip settings (i.e., simple shear) to unidirectional layer-parallel compression is considered here by varying the convergence angle of the boundary conditions; hence the results are applicable to general transpressional tectonic settings. Only upright symmetrical single-layer fold structures are considered. The horizontal higher-viscous layer exhibits an initial point-like perturbation. Due to the mixed pure- and simple shear boundary conditions a mechanical buckling instability grows from this perturbation in all three dimensions, described by: Fold amplification (vertical growth): Fold amplification describes the growth from a fold shape with low limb-dip angle to a shape with higher limb-dip angle. Fold elongation (growth parallel to fold axis): Fold elongation describes the growth from a dome-shaped (3D) structure to a more cylindrical fold (2D). Sequential fold growth (growth perpendicular to fold axial plane): Sequential fold growth describes the growth of secondary (and further) folds adjacent to the initial isolated fold. The term 'lateral fold growth' is used as an umbrella term for both fold elongation and sequential fold growth. In addition, the orientation of the fold axis is tracked as a function of the convergence angle. Even though the absolute values of all three growth rates are markedly reduced with increasing simple-shear component at the boundaries, the general pattern of the quantified fold growth under the studied general-shear boundary conditions is surprisingly similar to the end-member case of unidirectional layer-parallel compression (Frehner, 2014). Fold growth rates in the two lateral directions are almost identical resulting in bulk fold structures with aspect ratios in map view close to 1. Fold elongation is continuous with increasing bulk deformation, while sequential fold growth exhibits jumps whenever a new sequential fold appears. Compared with the two lateral growth directions, fold amplification exhibits a slightly higher growth rate. The orientation of the fold axis has an angle equal to 1 2 of 90° minus the convergence angle; and this orientation is stable with increasing bulk deformation, i.e. the fold axis does not rotate with increasing general-shear deformation. For example, for simple-shear boundary conditions (convergence angle 0°) the fold axis is stable at an angle of 45° to the boundaries; for a convergence angle of 45° the fold axis is stable at an angle of 22.5° to the boundaries. REFERENCE: Frehner M., 2014: 3D fold growth rates, Terra Nova 26, 417-424, doi:10.1111/ter.12116.

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1

2013-09-21

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSbmore » islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.« less

Anisotropic Growth of Otavite on Calcite: Implications for Heteroepitaxial Growth Mechanisms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riechers, Shawn L.; Kerisit, Sebastien N.

Elucidating how cation intermixing can affect the mechanisms of heteroepitaxial growth in aqueous media has remained a challenging endeavor. Toward this goal, in situ atomic force microscopy was employed to image the heteroepitaxial growth of otavite (CdCO3) at the (10-14) surface of calcite (CaCO3) single crystals in static aqueous conditions. Heteroepitaxial growth proceeded via spreading of three-dimensional (3D) islands and two-dimensional (2D) atomic layers at low and high initial saturation levels, respectively. Experiments were carried out as a function of applied force and imaging mode thus enabling determination of growth mechanisms unaltered by imaging artifacts. This approach revealed the significantmore » anisotropic nature of heteroepitaxial growth on calcite in both growth modes and its dependence on supersaturation, intermixing, and substrate topography. The 3D islands not only grew preferentially along the [42-1] direction relative to the [010] direction, resulting in rod-like surface precipitates, but also showed clear preference for growth from the island end rich in obtuse/obtuse kink sites. Pinning to step edges was observed to often reverse this tendency. In the 2D growth mode, the relative velocities of acute and obtuse steps were observed to switch between the first and second atomic layers. This phenomenon stemmed from the significant Cd-Ca intermixing in the first layer, despite bulk thermodynamics predicting the formation of almost pure otavite. Composition effects were also responsible for the inability of 3D islands to grow on 2D layers in cases where both modes were observed to occur simultaneously. Overall, the AFM images highlighted the effects of intermixing on heteroepitaxial growth, particularly how it can induce thickness-dependent growth mechanisms at the nanoscale.« less

Temporal behavior of RHEED intensity oscillations during molecular beam epitaxial growth of GaAs and AlGaAs on (111)B GaAs substrates

NASA Astrophysics Data System (ADS)

Yen, Ming Y.; Haas, T. W.

1990-10-01

We present the temporal behavior of intensity oscillations in reflection high-energy electron diffraction (RHEED) during molecular beam epitaxial (MBE) growth of GaAs and A1GaAs on (1 1 1)B GaAs substrates. The RHEED intensity oscillations were examined as a function of growth parameters in order to provide the insight into the dynamic characteristics and to identify the optimal condition for the two-dimensional layer-by-layer growth. The most intense RHEED oscillation was found to occur within a very narrow temperature range which seems to optimize the surface migration kinetics of the arriving group III elements and the molecular dissodiative reaction of the group V elements. The appearance of an initial transient of the intensity upon commencement of the growth and its implications are described.

Columnar and subsurface silicide growth with novel molecular beam epitaxy techniques

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; George, T.; Pike, W. T.

1992-01-01

We have found novel growth modes for epitaxial CoSi2 at high temperatures coupled with Si-rich flux ratios or low deposition rates. In the first of these modes, codeposition of metal and Si at 600-800 C with excess Si leads to the formation of epitaxial silicide columns surrounded by single-crystal Si. During the initial stages of the deposition, the excess Si grows homoepitaxially in between the silicide, which forms islands, so that the lateral growth of the islands is confined. Once a template layer is established by this process, columns of silicide form as a result of selective epitaxy of silicide on silicide and Si on Si. This growth process allows nanometer control over silicide particles in three dimensions. In the second of these modes, a columnar silicide seed layer is used as a template to nucleate subsurface growth of CoSi2. With a 100 nm Si layer covering CoSi2 seeds, Co deposited at 800C and 0.01 nm/s diffuses down to grow on the buried seeds rather than nucleating surface silicide islands. For thicker Si caps or higher deposition rates, the surface concentration of Co exceeds the critical concentration for nucleation of islands, preventing this subsurface growth mode from occurring. Using this technique, single-crystal layers of CoSi2 buried under single-crystal Si caps have been grown.

Formation of hexagonal and cubic ice during low-temperature growth

PubMed Central

Thürmer, Konrad; Nie, Shu

2013-01-01

From our daily life we are familiar with hexagonal ice, but at very low temperature ice can exist in a different structure––that of cubic ice. Seeking to unravel the enigmatic relationship between these two low-pressure phases, we examined their formation on a Pt(111) substrate at low temperatures with scanning tunneling microscopy and atomic force microscopy. After completion of the one-molecule-thick wetting layer, 3D clusters of hexagonal ice grow via layer nucleation. The coalescence of these clusters creates a rich scenario of domain-boundary and screw-dislocation formation. We discovered that during subsequent growth, domain boundaries are replaced by growth spirals around screw dislocations, and that the nature of these spirals determines whether ice adopts the cubic or the hexagonal structure. Initially, most of these spirals are single, i.e., they host a screw dislocation with a Burgers vector connecting neighboring molecular planes, and produce cubic ice. Films thicker than ∼20 nm, however, are dominated by double spirals. Their abundance is surprising because they require a Burgers vector spanning two molecular-layer spacings, distorting the crystal lattice to a larger extent. We propose that these double spirals grow at the expense of the initially more common single spirals for an energetic reason: they produce hexagonal ice. PMID:23818592

Corrosion of low alloy steel containing 0.5% chromium in supercritical CO2-saturated brine and water-saturated supercritical CO2 environments

NASA Astrophysics Data System (ADS)

Wei, Liang; Gao, Kewei; Li, Qian

2018-05-01

The corrosion behavior of P110 low-Cr alloy steel in supercritical CO2-saturated brine (aqueous phase) and water-saturated supercritical CO2 (SC CO2 phase) was investigated. The results show that P110 steel primarily suffered general corrosion in the aqueous phase, while severe localized corrosion occurred in the SC CO2 phase. The formation of corrosion product scale on P110 steel in the aqueous phase divided into three stages: formation of the initial corrosion layer containing amorphous Cr(OH)3, FeCO3 and a small amount of Fe3C; transformation of initial corrosion layer to mixed layer, which consisted of FeCO3 and a small amount of Cr(OH)3 and Fe3C; growth and dissolution of the mixed layer. Finally, only a single mixed layer covered on the steel in the aqueous phase. However, the scale formed in SC CO2 phase consisted of two layers: the inner mixed layer and the dense outer FeCO3 crystalline layer.

Preservation of Archaeal Surface Layer Structure During Mineralization

NASA Astrophysics Data System (ADS)

Kish, Adrienne; Miot, Jennyfer; Lombard, Carine; Guigner, Jean-Michel; Bernard, Sylvain; Zirah, Séverine; Guyot, François

2016-05-01

Proteinaceous surface layers (S-layers) are highly ordered, crystalline structures commonly found in prokaryotic cell envelopes that augment their structural stability and modify interactions with metals in the environment. While mineral formation associated with S-layers has previously been noted, the mechanisms were unconstrained. Using Sulfolobus acidocaldarius a hyperthermophilic archaeon native to metal-enriched environments and possessing a cell envelope composed only of a S-layer and a lipid cell membrane, we describe a passive process of iron phosphate nucleation and growth within the S-layer of cells and cell-free S-layer “ghosts” during incubation in a Fe-rich medium, independently of metabolic activity. This process followed five steps: (1) initial formation of mineral patches associated with S-layer; (2) patch expansion; (3) patch connection; (4) formation of a continuous mineral encrusted layer at the cell surface; (5) early stages of S-layer fossilization via growth of the extracellular mineralized layer and the mineralization of cytosolic face of the cell membrane. At more advanced stages of encrustation, encrusted outer membrane vesicles are formed, likely in an attempt to remove damaged S-layer proteins. The S-layer structure remains strikingly well preserved even upon the final step of encrustation, offering potential biosignatures to be looked for in the fossil record.

MBE growth of highly reproducible VCSELs

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.

1997-05-01

Advances in the design of heterojunction devices have placed stringent demands on the epitaxial material technologies required to fabricate these structures. The increased demand for more stringent tolerance and complex device structures have resulted in a situation where acceptable growth yields will be realized only if epitaxial growth is directly monitored and controlled in real time. We report the growth of 980- and 850-nm vertical cavity surface emitting lasers (VCSEL's) by gas-source molecular beam epitaxy (GSMBE), in which the pyrometric interferometry technique is used for in situ monitoring and feedback control of layer thickness to obtain the highly reproducible distributed Bragg reflectors (DBR) for VCSEL structures. This technique uses an optical pyrometer to measure emissivity oscillations of the growing epi-layer surface. The growing layer thickness can then be related to the emissivity oscillation signals. When the layer reaches the desired thickness, the growth of the subsequent layer is initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the Fabry-Perot resonance at the desired wavelength is reproducibly obtained. The run-to-run variation of the Fabry-Perot wavelength of VCSEL structures is < ± 0.4%. Using this technique, the group III fluxes can also be calibrated and corrected for flux drifts, thus we are able to control the gain peak of the active region with a run-to-run variation of less than 0.3%. Surface emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 5 mA are measured at room temperature for 980- and 850-nm lasers, respectively. Output powers higher than 25 mW for 980-nm and 12 mW for 850-nm devices are obtained.

Thermal and solutal conditions at the tips of a directional dendritic growth front

NASA Technical Reports Server (NTRS)

Mccay, T. D.; Mccay, Mary H.; Hopkins, John A.

1991-01-01

The line-of-sight averaged, time-dependent dendrite tip concentrations for the diffusion dominated vertical directional solidification of a metal model (ammonium chloride and water) were obtained by extrapolating exponentially fit diffusion layer profiles measured using a laser interferometer. The tip concentrations were shown to increase linearly with time throughout the diffusion dominated growth process for an initially stagnant dendritic array. The process was terminated for the cases chosen by convective breakdown suffered when the conditionally stable diffusion layer exceeded the critical Rayleigh criteria. The transient tip concentrations were determined to significantly exceed the values predicted for steady state, thus producing much larger constitutional undercoolings. This has ramifications for growth speeds, arm spacings and the dendritic structure itself.

Vertical wind shear characteristics that promote supercell-to-MCS transitions

NASA Astrophysics Data System (ADS)

Peters, J. M.

2017-12-01

What causes supercells to transition into MCSs in some situations, but not others? To explore this question, I first examined observed environmental characteristics of supercell events when MCSs formed, and compared them to the analogous environmental characteristics of supercell events when MCSs did not form. During events when MCS growth occurred, 0-1 km (low-level) vertical wind shear was stronger and 0-10 km (deep-layer) vertical wind shear was weaker than the wind shear during events when MCS growth did not occur. Next, I used idealized simulations of supercell thunderstorms to understand the connections between low-level and deep-layer shear and MCS growth. Compared to simulations with strong deep-layer shear, the simulations with weak deep-layer shear had rain in the storm's forward-flank downdraft (FFD) that fell closer to the updraft, fell through storm-moistened air and evaporated less, and produced a more intense FFD. Compared to simulations with weak low-level shear, the simulations with stronger low-level shear showed enhanced northward low-level hydrometeor transport into the FFD. Environments with strong low-level shear and weak deep-layer shear therefore conspired to produce a storm with a more intense FFD cold pool, when compared to environments with weak low-level shear and/or strong deep-layer shear. This strong FFD periodically disrupted the supercells' mesocyclones, and favorably interacted with westerly wind shear to produce widespread linear convection initiation, which drove MCS growth. These results suggest that increasing low-level wind shear after dark - while commonly assumed to enhance tornado potential - may in fact drive MCS growth and reduce tornado potential, unless it is combined with sufficiently strong deep layer shear.

Turbulence and mixing from optimal perturbations to a stratified shear layer

NASA Astrophysics Data System (ADS)

Kaminski, Alexis; Caulfield, C. P.; Taylor, John

2014-11-01

The stability and mixing of stratified shear layers is a canonical problem in fluid dynamics with relevance to flows in the ocean and atmosphere. The Miles-Howard theorem states that a necessary condition for normal-mode instability in parallel, inviscid, steady stratified shear flows is that the gradient Richardson number, Rig is less than 1/4 somewhere in the flow. However, substantial transient growth of non-normal modes may be possible at finite times even when Rig > 1 / 4 everywhere in the flow. We have calculated the ``optimal perturbations'' associated with maximum perturbation energy gain for a stably-stratified shear layer. These optimal perturbations are then used to initialize direct numerical simulations. For small but finite perturbation amplitudes, the optimal perturbations grow at the predicted linear rate initially, but then experience sufficient transient growth to become nonlinear and susceptible to secondary instabilities, which then break down into turbulence. Remarkably, this occurs even in flows for which Rig > 1 / 4 everywhere. We will describe the nonlinear evolution of the optimal perturbations and characterize the resulting turbulence and mixing.

On the nonlinear three dimensional instability of Stokes layers and other shear layers to pairs of oblique waves

NASA Technical Reports Server (NTRS)

Wu, Xuesong; Lee, Sang Soo; Cowley, Stephen J.

1992-01-01

The nonlinear evolution of a pair of initially oblique waves in a high Reynolds Number Stokes layer is studied. Attention is focused on times when disturbances of amplitude epsilon have O(epsilon(exp 1/3)R) growth rates, where R is the Reynolds number. The development of a pair of oblique waves is then controlled by nonlinear critical-layer effects. Viscous effects are included by studying the distinguished scaling epsilon = O(R(exp -1)). This leads to a complicated modification of the kernel function in the integro-differential amplitude equation. When viscosity is not too large, solutions to the amplitude equation develop a finite-time singularity, indicating that an explosive growth can be introduced by nonlinear effects; we suggest that such explosive growth can lead to the bursts observed in experiments. Increasing the importance of viscosity generally delays the occurrence of the finite-time singularity, and sufficiently large viscosity may lead to the disturbance decaying exponentially. For the special case when the streamwise and spanwise wavenumbers are equal, the solution can evolve into a periodic oscillation. A link between the unsteady critical-layer approach to high-Reynolds-number flow instability, and the wave vortex approach is identified.

Control of Alq3 wetting layer thickness via substrate surface functionalization.

PubMed

Tsoi, Shufen; Szeto, Bryan; Fleischauer, Michael D; Veinot, Jonathan G C; Brett, Michael J

2007-06-05

The effects of substrate surface energy and vapor deposition rate on the initial growth of porous columnar tris(8-hydroxyquinoline)aluminum (Alq3) nanostructures were investigated. Alq3 nanostructures thermally evaporated onto as-supplied Si substrates bearing an oxide were observed to form a solid wetting layer, likely caused by an interfacial energy mismatch between the substrate and Alq3. Wetting layer thickness control is important for potential optoelectronic applications. A dramatic decrease in wetting layer thickness was achieved by depositing Alq3 onto alkyltrichlorosilane-derivatized Si/oxide substrates. Similar effects were noted with increasing deposition rates. These two effects enable tailoring of the wetting layer thickness.

Self-similarity of a Rayleigh–Taylor mixing layer at low Atwood number with a multimode initial perturbation

DOE PAGES

Morgan, B. E.; Olson, B. J.; White, J. E.; ...

2017-06-29

High-fidelity large eddy simulation (LES) of a low-Atwood number (A = 0.05) Rayleigh-Taylor mixing layer is performed using the tenth-order compact difference code Miranda. An initial multimode perturbation spectrum is specified in Fourier space as a function of mesh resolution such that a database of results is obtained in which each successive level of increased grid resolution corresponds approximately to one additional doubling of the mixing layer width, or generation. The database is then analyzed to determine approximate requirements for self-similarity, and a new metric is proposed to quantify how far a given simulation is from the limit of self-similarity.more » It is determined that mixing layer growth reaches a high degree of self-similarity after approximately 4.5 generations. Statistical convergence errors and boundary effects at late time, however, make it impossible to draw similar conclusions regarding the self-similar growth of more sensitive turbulence parameters. Finally, self-similar turbulence profiles from the LES database are compared with one-dimensional simulations using the k-L-a and BHR-2 Reynolds-averaged Navier-Stokes (RANS) models. The k-L-a model, which is calibrated to reproduce a quadratic turbulence kinetic energy profile for a self-similar mixing layer, is found to be in better agreement with the LES than BHR-2 results.« less

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

NASA Astrophysics Data System (ADS)

Li, Qiang; Lai, Billy; Lau, Kei May

2017-10-01

We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

NASA Technical Reports Server (NTRS)

George, M. A.; Burger, A.; Collins, W. E.; Davidson, J. L.; Barnes, A. V.; Tolk, N. H.

1994-01-01

The nucleation and growth of plasma-enhanced chemical-vapor deposited polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) the cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the film's cross section and interface, however, were not highly affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by a small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscopy spectra indicate that some silicon carbide is present in the precursor layer.

On the growth and form of cortical convolutions

NASA Astrophysics Data System (ADS)

Tallinen, Tuomas; Chung, Jun Young; Rousseau, François; Girard, Nadine; Lefèvre, Julien; Mahadevan, L.

2016-06-01

The rapid growth of the human cortex during development is accompanied by the folding of the brain into a highly convoluted structure. Recent studies have focused on the genetic and cellular regulation of cortical growth, but understanding the formation of the gyral and sulcal convolutions also requires consideration of the geometry and physical shaping of the growing brain. To study this, we use magnetic resonance images to build a 3D-printed layered gel mimic of the developing smooth fetal brain; when immersed in a solvent, the outer layer swells relative to the core, mimicking cortical growth. This relative growth puts the outer layer into mechanical compression and leads to sulci and gyri similar to those in fetal brains. Starting with the same initial geometry, we also build numerical simulations of the brain modelled as a soft tissue with a growing cortex, and show that this also produces the characteristic patterns of convolutions over a realistic developmental course. All together, our results show that although many molecular determinants control the tangential expansion of the cortex, the size, shape, placement and orientation of the folds arise through iterations and variations of an elementary mechanical instability modulated by early fetal brain geometry.

Growth and Characterization of Pyrite Thin Films for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Wertheim, Alex

A series of pyrite thin films were synthesized using a novel sequential evaporation technique to study the effects of substrate temperature on deposition rate and micro-structure of the deposited material. Pyrite was deposited in a monolayer-by-monolayer fashion using sequential evaporation of Fe under high vacuum, followed by sulfidation at high S pressures (typically > 1 mTorr to 1 Torr). Thin films were synthesized using two different growth processes; a one-step process in which a constant growth temperature is maintained throughout growth, and a three-step process in which an initial low temperature seed layer is deposited, followed by a high temperature layer, and then finished with a low temperature capping layer. Analysis methods to analyze the properties of the films included Glancing Angle X-Ray Diffraction (GAXRD), Rutherford Back-scattering Spectroscopy (RBS), Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectroscopy (SIMS), 2-point IV measurements, and Hall effect measurements. Our results show that crystallinity of the pyrite thin film improves and grain size increases with increasing substrate temperature. The sticking coefficient of Fe was found to increase with increasing growth temperature, indicating that the Fe incorporation into the growing film is a thermally activated process.

Computational analysis in support of the SSTO flowpath test

NASA Astrophysics Data System (ADS)

Duncan, Beverly S.; Trefny, Charles J.

1994-10-01

A synergistic approach of combining computational methods and experimental measurements is used in the analysis of a hypersonic inlet. There are four major focal points within this study which examine the boundary layer growth on a compression ramp upstream of the cowl lip of a scramjet inlet. Initially, the boundary layer growth on the NASP Concept Demonstrator Engine (CDE) is examined. The follow-up study determines the optimum diverter height required by the SSTO Flowpath test to best duplicate the CDE results. These flow field computations are then compared to the experimental measurements and the mass average Mach number is determined for this inlet.

Computational Analysis in Support of the SSTO Flowpath Test

NASA Technical Reports Server (NTRS)

Duncan, Beverly S.; Trefny, Charles J.

1994-01-01

A synergistic approach of combining computational methods and experimental measurements is used in the analysis of a hypersonic inlet. There are four major focal points within this study which examine the boundary layer growth on a compression ramp upstream of the cowl lip of a scramjet inlet. Initially, the boundary layer growth on the NASP Concept Demonstrator Engine (CDE) is examined. The follow-up study determines the optimum diverter height required by the SSTO Flowpath test to best duplicate the CDE results. These flow field computations are then compared to the experimental measurements and the mass average Mach number is determined for this inlet.

Large scale atomistic simulation of single-layer graphene growth on Ni(111) surface: molecular dynamics simulation based on a new generation of carbon-metal potential

NASA Astrophysics Data System (ADS)

Xu, Ziwei; Yan, Tianying; Liu, Guiwu; Qiao, Guanjun; Ding, Feng

2015-12-01

To explore the mechanism of graphene chemical vapor deposition (CVD) growth on a catalyst surface, a molecular dynamics (MD) simulation of carbon atom self-assembly on a Ni(111) surface based on a well-designed empirical reactive bond order potential was performed. We simulated single layer graphene with recorded size (up to 300 atoms per super-cell) and reasonably good quality by MD trajectories up to 15 ns. Detailed processes of graphene CVD growth, such as carbon atom dissolution and precipitation, formation of carbon chains of various lengths, polygons and small graphene domains were observed during the initial process of the MD simulation. The atomistic processes of typical defect healing, such as the transformation from a pentagon into a hexagon and from a pentagon-heptagon pair (5|7) to two adjacent hexagons (6|6), were revealed as well. The study also showed that higher temperature and longer annealing time are essential to form high quality graphene layers, which is in agreement with experimental reports and previous theoretical results.To explore the mechanism of graphene chemical vapor deposition (CVD) growth on a catalyst surface, a molecular dynamics (MD) simulation of carbon atom self-assembly on a Ni(111) surface based on a well-designed empirical reactive bond order potential was performed. We simulated single layer graphene with recorded size (up to 300 atoms per super-cell) and reasonably good quality by MD trajectories up to 15 ns. Detailed processes of graphene CVD growth, such as carbon atom dissolution and precipitation, formation of carbon chains of various lengths, polygons and small graphene domains were observed during the initial process of the MD simulation. The atomistic processes of typical defect healing, such as the transformation from a pentagon into a hexagon and from a pentagon-heptagon pair (5|7) to two adjacent hexagons (6|6), were revealed as well. The study also showed that higher temperature and longer annealing time are essential to form high quality graphene layers, which is in agreement with experimental reports and previous theoretical results. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr06016h

Modifying mixing and instability growth through the adjustment of initial conditions in a high-energy-density counter-propagating shear experiment on OMEGA

DOE PAGES

Merritt, E. C.; Doss, F. W.; Loomis, E. N.; ...

2015-06-24

Counter-propagating shear experiments conducted at the OMEGA Laser Facility have been evaluating the effect of target initial conditions, specifically the characteristics of a tracer foil located at the shear boundary, on Kelvin-Helmholtz instability evolution and experiment transition toward nonlinearity and turbulence in the high-energy-density (HED) regime. Experiments are focused on both identifying and uncoupling the dependence of the model initial turbulent length scale in variable-density turbulence models of k-ϵ type on competing physical instability seed lengths as well as developing a path toward fully developed turbulent HED experiments. We present results from a series of experiments controllably and independently varyingmore » two initial types of scale lengths in the experiment: the thickness and surface roughness (surface perturbation scale spectrum) of a tracer layer at the shear interface. We show that decreasing the layer thickness and increasing the surface roughness both have the ability to increase the relative mixing in the system, and thus theoretically decrease the time required to begin transitioning to turbulence in the system. In addition, we also show that we can connect a change in observed mix width growth due to increased foil surface roughness to an analytically predicted change in model initial turbulent scale lengths.« less

Resonant triad in boundary-layer stability. Part 1: Fully nonlinear interaction

NASA Technical Reports Server (NTRS)

Mankbadi, Reda R.

1991-01-01

A first principles theory is developed to study the nonlinear spatial evolution of a near-resonance triad of instability waves in boundary layer transition. This triad consists of a plane wave at fundamental frequency and a pair of symmetrical, oblique waves at the subharmonic frequency. A low frequency, high Reynolds number asymptotic scaling leads to a distinct critical layer where nonlinearity first becomes important; the development of the triad's waves is determined by the critical layer's nonlinear, viscous dynamics. The resulting theory is fully nonlinear in that all nonlinearly generated oscillatory and nonoscillatory components are accounted for. The presence of the plane wave initially causes exponential of exponential growth of the oblique waves. However, the plane wave continues to follow the linear theory, even when the oblique waves' amplitude attains the same order of magnitude as that of the plane wave. A fully interactive stage then comes into effect when the oblique waves exceed a certain level compared to that of the plane wave. The oblique waves react back on the fundamental, slowing its growth rate. The oblique waves' saturation results from their self-interaction - a mechanism that does not require the presence of the plane wave. The oblique waves' saturation level is independent of their initial level, but decreases as the obliqueness angle increases.

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

NASA Astrophysics Data System (ADS)

Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

2016-12-01

In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

AC electrical breakdown phenomena of epoxy/layered silicate nanocomposite in needle-plate electrodes.

PubMed

Park, Jae-Jun; Lee, Jae-Young

2013-05-01

Epoxy/layered silicate nanocomposite for the insulation of heavy electric equipments were prepared by dispersing 1 wt% of a layered silicate into an epoxy matrix with a homogenizing mixer and then AC electrical treeing and breakdown tests were carried out. Wide-angle X-ray diffraction (WAXD) analysis and transmission electron microscopy (TEM) observation showed that nano-sized monolayers were exfoliated from a multilayered silicate in the epoxy matrix. When the nano-sized silicate layers were incorporated into the epoxy matrix, the breakdown rate in needle-plate electrode geometry was 10.6 times lowered than that of the neat epoxy resin under the applied electrical field of 520.9 kV/mm at 30 degrees C, and electrical tree propagated with much more branches in the epoxy/layered silicate nanocomposite. These results showed that well-dispersed nano-sized silicate layers retarded the electrical tree growth rate. The effects of applied voltage and ambient temperature on the tree initiation, growth, and breakdown rate were also studied, and it was found that the breakdown rate was largely increased, as the applied voltage and ambient temperature increased.

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadoh, Taizoh, E-mail: sadoh@ed.kyushu-u.ac.jp; Chikita, Hironori; Miyao, Masanobu

2015-09-07

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe on Si substrates is strongly desired to realize advanced electronic and optical devices, which can be merged onto Si large-scale integrated circuits (LSI). To achieve this, annealing characteristics of a-GeSn/c-Si structures are investigated under wide ranges of the initial Sn concentrations (0%–26%) and annealing conditions (300–1000 °C, 1 s–48 h). Epitaxial growth triggered by SiGe mixing is observed after annealing, where the annealing temperatures necessary for epitaxial growth significantly decrease with increasing initial Sn concentration and/or annealing time. As a result, Ge-rich (∼80%) SiGe layers with Sn concentrations of ∼2% are realized by ultra-low temperature annealingmore » (300 °C, 48 h) for a sample with the initial Sn concentration of 26%. The annealing temperature (300 °C) is in the solid-liquid coexisting temperature region of the phase diagram for Ge-Sn system. From detailed analysis of crystallization characteristics and composition profiles in grown layers, it is suggested that SiGe mixing is generated by a liquid-phase reaction even at ultra-low temperatures far below the melting temperature of a-GeSn. This ultra-low-temperature growth technique of Ge-rich SiGe on Si substrates is expected to be useful to realize next-generation LSI, where various multi-functional devices are integrated on Si substrates.« less

Thickness dependence of crystal and optical characterization on ZnO thin film grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Baek, Seung-Hye; Lee, Hyun-Jin; Lee, Sung-Nam

2018-06-01

We studied the thickness dependence of the crystallographic and optical properties of ZnO thin films grown on c-plane sapphire substrate using atomic layer deposition. High-resolution X-ray diffraction (HR-XRD) revealed two peaks at 34.5° and 36.2° in the initial growth stage of ZnO on the sapphire substrate, corresponding to the (002) and (101) ZnO planes, respectively. However, as the thickness of the ZnO film increased, the XRD intensity of the (002) ZnO peak increased drastically, compared with that of the (101) ZnO peak. This indicated that (002) and (101) ZnO were simultaneously grown on the c-plane sapphire substrate in the initial growth stage, and that (002) ZnO was predominantly grown with the increase in the thickness of ZnO film. The ZnO thin film presented an anisotropic surface structure at the initial stage, whereas the isotropic surface morphology was developed with an increase in the film thickness of ZnO. These observations were consistent with the HR-XRD results.

Controlled growth of heteroepitaxial zinc oxide nanostructures on gallium nitride.

PubMed

Kong, Bo Hyun; Kim, Dong Chan; Mohanta, Sanjay Kumar; Han, Won Suk; Cho, Hyung Koun; Hong, Chang-Hee; Kim, Hyung Gu

2009-07-01

ZnO epitaxial layers were grown on GaN underlying films by metalorganic chemical vapor deposition at various temperatures. An increase in growth temperature led to morphological changes from a smooth film with hexagonal-shaped surface pits to honeycomb-like nanostructures with deep hollow, and additionally resulted in a decrease in dislocation density in the interfacial layers. The reduced dislocation density at the higher growth temperature was attributed to an increase in the size of the critical nucleus and the low nucleation density at the initial stage. The shifts in the peak positions in the X-ray diffraction and photoluminescence were also observed in the samples grown at different temperatures, and were caused by the variation of residual strains after the complete coalescence of the nuclei.

Some TEM observations of Al2O3 scales formed on NiCrAl alloys

NASA Technical Reports Server (NTRS)

Smialek, J.; Gibala, R.

1979-01-01

The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids were observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. The voids resulted from an excess number of oxygen vacancies near the oxidemetal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidation of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al, Cr)2O3 and Ni(Al, Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationship between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

Atomic layer epitaxy of YBaCuO for optoelectronic applications

NASA Technical Reports Server (NTRS)

Skogman, R. A.; Khan, M. A.; Van Hove, J. M.; Bhattarai, A.; Boord, W. T.

1992-01-01

An MOCVD-based atomic-layer epitaxy process is being developed as a potential solution to the problems of film-thickness and interface-abruptness control which are encountered when fabricating superconductor-insulator-superconductor devices using YBa2Cu3O(7-x). In initial studies, the atomic-layer MOCVD process yields superconducting YBa2Cu3O(7-x) films with substrate temperatures of 605 C during film growth, and no postdeposition anneal. The low temperature process yields a smooth film surface and can reduce interface degradation due to diffusion.

Role of SiC substrate surface on local tarnishing of deposited silver mirror stacks

NASA Astrophysics Data System (ADS)

Limam, Emna; Maurice, Vincent; Seyeux, Antoine; Zanna, Sandrine; Klein, Lorena H.; Chauveau, Grégory; Grèzes-Besset, Catherine; Savin De Larclause, Isabelle; Marcus, Philippe

2018-04-01

The role of the SiC substrate surface on the resistance to the local initiation of tarnishing of thin-layered silver stacks for demanding space mirror applications was studied by combined surface and interface analysis on model stack samples deposited by cathodic magnetron sputtering and submitted to accelerated aging in gaseous H2S. It is shown that suppressing the surface pores resulting from the bulk SiC material production process by surface pretreatment eliminates the high aspect ratio surface sites that are imperfectly protected by the SiO2 overcoat after the deposition of silver. The formation of channels connecting the silver layer to its environment through the failing protection layer at the surface pores and locally enabling H2S entry and Ag2S growth as columns until emergence at the stack surface is suppressed, which markedly delays tarnishing initiation and thereby preserves the optical performance. The results revealed that residual tarnishing initiation proceeds by a mechanism essentially identical in nature but involving different pathways short circuiting the protection layer and enabling H2S ingress until the silver layer. These permeation pathways are suggested to be of microstructural origin and could correspond to the incompletely coalesced intergranular boundaries of the SiO2 layer.

Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M., E-mail: kitoh@appi.keio.ac.jp

2015-09-28

We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

A new facility for studying shock-wave passage over dust layers

NASA Astrophysics Data System (ADS)

Chowdhury, A. Y.; Marks, B. D.; Johnston, H. Greg; Mannan, M. Sam; Petersen, E. L.

2016-03-01

Dust explosion hazards in areas where coal and other flammable materials are found have caused unnecessary loss of life and halted business operations in some instances. The elimination of secondary dust explosion hazards, i.e., reducing dust dispersion, can be characterized in shock tubes to understand shock-dust interactions. For this reason, a new shock-tube test section was developed and integrated into an existing shock-tube facility. The test section has large windows to allow for the use of the shadowgraph technique to track dust-layer growth behind a passing normal shock wave, and it is designed to handle an initial pressure of 1 atm with an incident shock wave Mach number as high as 2 to mimic real-world conditions. The test section features an easily removable dust pan with inserts to allow for adjustment of the dust-layer thickness. The design also allows for changing the experimental variables such as initial pressure, shock Mach number (Ms), dust-layer thickness, and the characteristics of the dust itself. The characterization experiments presented herein demonstrate the advantages of the authors' test techniques toward providing new physical insights over a wider range of data than what have been available heretofore in the literature. Limestone dust with a layer thickness of 3.2 mm was subjected to Ms = 1.23, 1.32, and 1.6 shock waves, and dust-layer rise height was mapped with respect to time after shock passage. Dust particles subjected to a Ms = 1.6 shock wave rose more rapidly and to a greater height with respect to shock wave propagation than particles subjected to Ms = 1.23 and 1.32 shock waves. Although these results are in general agreement with the literature, the new data also highlight physical trends for dust-layer growth that have not been recorded previously, to the best of the authors' knowledge. For example, the dust-layer height rises linearly until a certain time where the growth rate is dramatically reduced, and in this second regime there is clear evidence of surface vertical structures at the dust-air interface.

Oogenesis: From Oogonia to Ovulation in the Flagfish, Jordanella floridae Goode and Bean, 1879 (Teleostei: Cyprinodontidae).

PubMed

Uribe, Mari Carmen; Grier, Harry J; García-Alarcón, Adriana; Parenti, Lynne R

2016-10-01

We provide histological details of the development of oocytes in the cyprinodontid flagfish, Jordanella floridae. There are six stages of oogenesis: Oogonial proliferation, chromatin nucleolus, primary growth (previtellogenesis [PG]), secondary growth (vitellogenesis), oocyte maturation and ovulation. The ovarian lamellae are lined by a germinal epithelium composed of epithelial cells and scattered oogonia. During primary growth, the development of cortical alveoli and oil droplets, are initiated simultaneously. During secondary growth, yolk globules coalesce into a fluid mass. The full-grown oocyte contains a large globule of fluid yolk. The germinal vesicle is at the animal pole, and the cortical alveoli and oil droplets are located at the periphery. The disposition of oil droplets at the vegetal pole of the germinal vesicle during late secondary growth stage is a unique characteristic. The follicular cell layer is composed initially of a single layer of squamous cells during early PG which become columnar during early vitellogenesis. During primary and secondary growth stages, filaments develop among the follicular cells and also around the micropyle. The filaments are seen extending from the zona pellucida after ovulation. During ovulation, a space is evident between the oocyte and the zona pellucida. Asynchronous spawning activity is confirmed by the observation that, after ovulation, the ovarian lamellae contain follicles in both primary and secondary growth stages; in contrast, when the seasonal activity of oogenesis and spawning ends, after ovulation, the ovarian lamellae contain only follicles in the primary growth stage. J. Morphol. 277:1339-1354, 2016. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

A predictability study of Lorenz's 28-variable model as a dynamical system

NASA Technical Reports Server (NTRS)

Krishnamurthy, V.

1993-01-01

The dynamics of error growth in a two-layer nonlinear quasi-geostrophic model has been studied to gain an understanding of the mathematical theory of atmospheric predictability. The growth of random errors of varying initial magnitudes has been studied, and the relation between this classical approach and the concepts of the nonlinear dynamical systems theory has been explored. The local and global growths of random errors have been expressed partly in terms of the properties of an error ellipsoid and the Liapunov exponents determined by linear error dynamics. The local growth of small errors is initially governed by several modes of the evolving error ellipsoid but soon becomes dominated by the longest axis. The average global growth of small errors is exponential with a growth rate consistent with the largest Liapunov exponent. The duration of the exponential growth phase depends on the initial magnitude of the errors. The subsequent large errors undergo a nonlinear growth with a steadily decreasing growth rate and attain saturation that defines the limit of predictability. The degree of chaos and the largest Liapunov exponent show considerable variation with change in the forcing, which implies that the time variation in the external forcing can introduce variable character to the predictability.

The effect of small streamwise velocity distortion on the boundary layer flow over a thin flat plate with application to boundary layer stability theory

NASA Technical Reports Server (NTRS)

Goldstein, M. E.; Leib, S. J.; Cowley, S. J.

1990-01-01

Researchers show how an initially linear spanwise disturbance in the free stream velocity field is amplified by leading edge bluntness effects and ultimately leads to a small amplitude but linear spanwise motion far downstream from the edge. This spanwise motion is imposed on the boundary layer flow and ultimately causes an order-one change in its profile shape. The modified profiles are highly unstable and can support Tollmein-Schlichting wave growth well upstream of the theoretical lower branch of the neutral stability curve for a Blasius boundary layer.

Application of a Reynolds stress turbulence model to the compressible shear layer

NASA Technical Reports Server (NTRS)

Sarkar, S.; Balakrishnan, L.

1990-01-01

Theoretically based turbulence models have had success in predicting many features of incompressible, free shear layers. However, attempts to extend these models to the high-speed, compressible shear layer have been less effective. In the present work, the compressible shear layer was studied with a second-order turbulence closure, which initially used only variable density extensions of incompressible models for the Reynolds stress transport equation and the dissipation rate transport equation. The quasi-incompressible closure was unsuccessful; the predicted effect of the convective Mach number on the shear layer growth rate was significantly smaller than that observed in experiments. Having thus confirmed that compressibility effects have to be explicitly considered, a new model for the compressible dissipation was introduced into the closure. This model is based on a low Mach number, asymptotic analysis of the Navier-Stokes equations, and on direct numerical simulation of compressible, isotropic turbulence. The use of the new model for the compressible dissipation led to good agreement of the computed growth rates with the experimental data. Both the computations and the experiments indicate a dramatic reduction in the growth rate when the convective Mach number is increased. Experimental data on the normalized maximum turbulence intensities and shear stress also show a reduction with increasing Mach number.

Optimizing pentacene thin-film transistor performance: Temperature and surface condition induced layer growth modification.

PubMed

Lassnig, R; Hollerer, M; Striedinger, B; Fian, A; Stadlober, B; Winkler, A

2015-11-01

In this work we present in situ electrical and surface analytical, as well as ex situ atomic force microscopy (AFM) studies on temperature and surface condition induced pentacene layer growth modifications, leading to the selection of optimized deposition conditions and entailing performance improvements. We prepared p ++ -silicon/silicon dioxide bottom-gate, gold bottom-contact transistor samples and evaluated the pentacene layer growth for three different surface conditions (sputtered, sputtered + carbon and unsputtered + carbon) at sample temperatures during deposition of 200 K, 300 K and 350 K. The AFM investigations focused on the gold contacts, the silicon dioxide channel region and the highly critical transition area. Evaluations of coverage dependent saturation mobilities, threshold voltages and corresponding AFM analysis were able to confirm that the first 3-4 full monolayers contribute to the majority of charge transport within the channel region. At high temperatures and on sputtered surfaces uniform layer formation in the contact-channel transition area is limited by dewetting, leading to the formation of trenches and the partial development of double layer islands within the channel region instead of full wetting layers. By combining the advantages of an initial high temperature deposition (well-ordered islands in the channel) and a subsequent low temperature deposition (continuous film formation for low contact resistance) we were able to prepare very thin (8 ML) pentacene transistors of comparably high mobility.

Optimizing pentacene thin-film transistor performance: Temperature and surface condition induced layer growth modification

PubMed Central

Lassnig, R.; Hollerer, M.; Striedinger, B.; Fian, A.; Stadlober, B.; Winkler, A.

2015-01-01

In this work we present in situ electrical and surface analytical, as well as ex situ atomic force microscopy (AFM) studies on temperature and surface condition induced pentacene layer growth modifications, leading to the selection of optimized deposition conditions and entailing performance improvements. We prepared p++-silicon/silicon dioxide bottom-gate, gold bottom-contact transistor samples and evaluated the pentacene layer growth for three different surface conditions (sputtered, sputtered + carbon and unsputtered + carbon) at sample temperatures during deposition of 200 K, 300 K and 350 K. The AFM investigations focused on the gold contacts, the silicon dioxide channel region and the highly critical transition area. Evaluations of coverage dependent saturation mobilities, threshold voltages and corresponding AFM analysis were able to confirm that the first 3–4 full monolayers contribute to the majority of charge transport within the channel region. At high temperatures and on sputtered surfaces uniform layer formation in the contact–channel transition area is limited by dewetting, leading to the formation of trenches and the partial development of double layer islands within the channel region instead of full wetting layers. By combining the advantages of an initial high temperature deposition (well-ordered islands in the channel) and a subsequent low temperature deposition (continuous film formation for low contact resistance) we were able to prepare very thin (8 ML) pentacene transistors of comparably high mobility. PMID:26543442

Effect of initial conditions on constant pressure mixing between two turbulent streams

NASA Astrophysics Data System (ADS)

Kangovi, S.

1983-02-01

It is pointed out that a study of the process of mixing between two dissimilar streams has varied applications in different fields. The applications include the design of an after burner in a high by-pass ratio aircraft engine and the disposal of effluents in a stream. The mixing process determines important quantities related to the energy transfer from main stream to the secondary stream, the temperature and velocity profiles, and the local kinematic and dissipative structure within the mixing region, and the growth of the mixing layer. Hill and Page (1968) have proposed the employment of an 'assumed epsilon' method in which the eddy viscosity model of Goertler (1942) is modified to account for the initial boundary layer. The present investigation is concerned with the application of the assumed epsilon technique to the study of the effect of initial conditions on the development of the turbulent mixing layer between two compressible, nonisoenergetic streams at constant pressure.

Initial formation of calcite crystals in the thin prismatic layer with the periostracum of Pinctada fucata.

PubMed

Suzuki, Michio; Nakayama, Seiji; Nagasawa, Hiromichi; Kogure, Toshihiro

2013-02-01

Although the formation mechanism of calcite crystals in the prismatic layer has been studied well in many previous works, the initial state of calcite formation has not been observed in detail using electron microscopes. In this study, we report that the soft prismatic layer with transparent color (the thin prismatic layer) in the tip of the fresh shell of Pinctada fucata was picked up to observe the early calcification phase. A scanning electron microscope (SEM) image showed that the growth tip of the thin prismatic layer was covered by the periostracum, which was also where the initial formation of calcite crystals began. A cross-section containing the thin calcite crystals in the thin prismatic layer with the periostracum was made using a focused ion beam (FIB) system. In a transmission electron microscope (TEM) observation, the thin calcite crystal (thickness is about 1μm) on the periostracum was found to be a single crystal with the c-axis oriented perpendicular to the shell surface. On the other hand, many aggregated small particles consisting of bassanite crystals were observed in the periostracum suggesting the possibility that not only organic sulfate but also inorganic sulfates exist in the prismatic layer. These discoveries in the early calcification phase of the thin prismatic layer may help to clarify the mechanism of regulating the nucleation and orientation of the calcite crystal in the shell. Copyright © 2012 Elsevier Ltd. All rights reserved.

Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor.

PubMed

Qi, Qiong; Yu, Aifang; Wang, Liangmin; Jiang, Chao

2010-11-01

The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm2Ns with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm2Ns and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

Direct simulation of high-speed mixing layers

NASA Technical Reports Server (NTRS)

Mukunda, H. S.; Sekar, B.; Carpenter, M. H.; Drummond, J. Philip; Kumar, Ajay

1992-01-01

A computational study of a nonreacting high-speed mixing layer is performed. A higher order algorithm with sufficient grid points is used to resolve all relevant scales. In all cases, a temporal free-stream disturbance is introduced. The resulting flow is time-sampled to generate a statistical cross section of the flow properties. The studies are conducted at two convective Mach numbers, three free-stream turbulence intensities, three Reynolds numbers, and two types of initial profiles-hyperbolic tangent (tanh) and boundary layer. The boundary-layer profile leads to more realistic predictions of the transition processes. The predicted transition Reynolds number of 0.18 x 10(exp 6) compares well with experimental data. Normalized vortex spacings for the boundary-layer case are about 3.5 and compare favorably with the 1.5 to 2.5 found in experimental measurements. The tanh profile produces spacings of about 10. The growth rate of the layer is shown to be moderately affected by the initial disturbance field, but comparison with experimental data shows moderate agreement. For the boundary-layer case, it is shown that noise at the Strouhal number of 0.007 is selectively amplified and shows little Reynolds number dependence.

Nonlinear Transient Growth and Boundary Layer Transition

NASA Technical Reports Server (NTRS)

Paredes, Pedro; Choudhari, Meelan M.; Li, Fei

2016-01-01

Parabolized stability equations (PSE) are used in a variational approach to study the optimal, non-modal disturbance growth in a Mach 3 at plate boundary layer and a Mach 6 circular cone boundary layer. As noted in previous works, the optimal initial disturbances correspond to steady counter-rotating streamwise vortices, which subsequently lead to the formation of streamwise-elongated structures, i.e., streaks, via a lift-up effect. The nonlinear evolution of the linearly optimal stationary perturbations is computed using the nonlinear plane-marching PSE for stationary perturbations. A fully implicit marching technique is used to facilitate the computation of nonlinear streaks with large amplitudes. To assess the effect of the finite-amplitude streaks on transition, the linear form of plane- marching PSE is used to investigate the instability of the boundary layer flow modified by spanwise periodic streaks. The onset of bypass transition is estimated by using an N- factor criterion based on the amplification of the streak instabilities. Results show that, for both flow configurations of interest, streaks of sufficiently large amplitude can lead to significantly earlier onset of transition than that in an unperturbed boundary layer without any streaks.

In situ study of in-beam cobalt suicide growth in silicon

NASA Astrophysics Data System (ADS)

Ruault, M.-O.; Fortuna, F.; Bernas, H.; Kaitasov, O.

1994-02-01

The control of buried suicide layer interfaces requires a systematic study of their formation conditions (implantation temperature, sample orientation, post-annealing conditions). At stoichiometric concentration, the layer roughness stems from the formation and overlap of B-type precipitates during implanted sample annealing. However, at such high concentrations several parameters interfere during suicide layer formation, particularly diffusion-limited precipitate growth and precipitate coalescence and Ostwald ripening. In order to analyze these factors separately, we have performed an in situ TEM study of the initial stages of CoSi 2 precipitate formation and growth in Si during 50 keV Co implantation to fluences between 10 15 and 1.5 × 10 16 Cocm -2, at temperatures between 350 and 650°C. At 350°C, the threshold fluence for suicide precipitate observation was 2 × 10 15 Cocm -2, and the size of the precipitates remained constant (about 4 nm) up to a fluence of 1.5 × 10 16 Cocm -2. At higher implantation temperatures, the average growth rate at 650°C is four times higher than at 500°C until the average size of the precipitates reaches ~ 8 nm. Then the growth rate is surprisingly independent of the implantation temperature. The results are discussed in the light of a recently developed precipitation kinetic analysis.

Growth mechanisms of perturbations in boundary layers over a compliant wall

NASA Astrophysics Data System (ADS)

Malik, M.; Skote, Martin; Bouffanais, Roland

2018-01-01

The temporal modal and nonmodal growth of three-dimensional perturbations in the boundary layer flow over an infinite compliant flat wall is considered. Using a wall-normal velocity and wall-normal vorticity formalism, the dynamic boundary condition at the compliant wall admits a linear dependence on the eigenvalue parameter, as compared to a quadratic one in the canonical formulation of the problem. As a consequence, the continuous spectrum is accurately obtained. This enables us to effectively filter the pseudospectra, which is a prerequisite to the transient growth analysis. An energy-budget analysis for the least-decaying hydroelastic (static divergence, traveling wave flutter, and near-stationary transitional) and Tollmien-Schlichting modes in the parameter space reveals the primary routes of energy flow. Moreover, the maximum transient growth rate increases more slowly with the Reynolds number than for the solid wall case. The slowdown is due to a complex dependence of the wall-boundary condition with the Reynolds number, which translates into a transition of the fluid-solid interaction from a two-way to a one-way coupling. Unlike the solid-wall case, viscosity plays a pivotal role in the transient growth. The initial and optimal perturbations are compared with the boundary layer flow over a solid wall; differences and similarities are discussed.

Stress generation and evolution in oxide heteroepitaxy

NASA Astrophysics Data System (ADS)

Fluri, Aline; Pergolesi, Daniele; Wokaun, Alexander; Lippert, Thomas

2018-03-01

Many physical properties of oxides can be changed by inducing lattice distortions in the crystal through heteroepitaxial growth of thin films. The average lattice strain can often be tuned by changing the film thickness or using suitable buffer layers between film and substrate. The exploitation of the full potential of strain engineering for sample or device fabrication rests on the understanding of the fundamental mechanisms of stress generation and evolution. For this study an optical measurement of the substrate curvature is used to monitor in situ how the stress builds up and relaxes during the growth of oxide thin films by pulsed laser deposition. The relaxation behavior is correlated with the growth mode, which is monitored simultaneously with reflection high-energy electron diffraction. The stress relaxation data is fitted and compared with theoretical models for stress evolution which were established for semiconductor epitaxy. The initial stage of the growth appears to be governed by surface stress and surface energy effects, while the subsequent stress relaxation is found to be fundamentally different between films grown on single-crystal substrates and on buffer layers. The first case can be rationalized with established theoretical models, but these models fail in the attempt to describe the growth on buffer layers. This is most probably due to the larger average density of crystalline defects in the buffer layers, which leads to a two-step stress relaxation mechanism, driven first by the nucleation and later by the migration of dislocation lines.

Energetics of cubic and hexagonal phases in Mn-doped GaN : First-principles pseudopotential calculations

NASA Astrophysics Data System (ADS)

Choi, Eun-Ae; Kang, Joongoo; Chang, K. J.

2006-12-01

We perform first-principles pseudopotential calculations to study the influence of Mn doping on the stability of two polytypes, wurtzite and zinc-blende, in GaN . In Mn δ -doped GaN and GaMnN alloys, we find similar critical concentrations of the Mn ions for stabilizing the zinc-blende phase against the wurtzite phase. Using a slab geometry of hexagonal lattices, we find that it is energetically unfavorable to form inversion domains with Mn exposure, in contrast to Mg doping. At the initial stage of epitaxial growth, a stacking fault that leads to the cubic bonds can be generated with the Mn exposure to the Ga-polar surface. However, the influence of the Mn δ -doped layer on the formation of the cubic phase is only effective for GaN layers deposited up to two monolayers. We find that the Mn ions are energetically more stable on the growth front than in the bulk, indicating that these ions act as a surfactant. Thus it is possible to grow cubic GaN if the Mn ions are periodically supplied or diffuse out from the Mn δ -doped layer to the growth front during the growth process.

Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots

NASA Astrophysics Data System (ADS)

Pohl, U. W.; Pötschke, K.; Schliwa, A.; Lifshits, M. B.; Shchukin, V. A.; Jesson, D. E.; Bimberg, D.

2006-05-01

Self-organized formation and evolution of quantum dot (QD) ensembles with a multimodal size distribution is reported. Such ensembles form after fast deposition near the critical thickness during a growth interruption (GRI) prior to cap layer growth and consist of pure InAs truncated pyramids with heights varying in steps of complete InAs monolayers, thereby creating well-distinguishable sub-ensembles. Ripening during GRI manifests itself by an increase of sub-ensembles of larger QDs at the expense of sub-ensembles of smaller ones, leaving the wetting layer unchanged. The dynamics of the multimodal QD size distribution is theoretically described using a kinetic approach. Starting from a broad distribution of flat QDs, a predominantly vertical growth is found due to strain-induced barriers for nucleation of a next atomic layer on different facets. QDs having initially a shorter base length attain a smaller height, accounting for the experimentally observed sub-ensemble structure. The evolution of the distribution is described by a master equation, which accounts for growth or dissolution of the QDs by mass exchange between the QDs and the adatom sea. The numerical solution is in good agreement with the measured dynamics.

Influence of the foundation layer on the layer-by-layer assembly of poly-L-lysine and poly(styrenesulfonate) and its usage in the fabrication of 3D microscale features.

PubMed

Zhou, Dejian; Bruckbauer, Andreas; Batchelor, Matthew; Kang, Dae-Joon; Abell, Chris; Klenerman, David

2004-10-12

The layer-by-layer (LBL) assembly of a polypeptide, poly-L-lysine (PLL), with poly(styrenesulfonate) sodium salt (PSS) on flat template-stripped gold (TSG) surfaces precoated with a self-assembled monolayer of alkanethiols terminated with positive (pyridinium), negative (carboxylic acid), and neutral [hexa(ethylene glycol)] groups is investigated. Both the topography and the rate of film thickness growth are found to be strongly dependent on the initial surface foundation layer. LBL assembly of PLL and PSS on patterned TSG surfaces produced by micro contact printing leads to structurally distinct microscale features, including pillars, ridges, and wells, whose height can be controlled with nanometer precision. Copyright 2004 American Chemical Society

Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)

NASA Astrophysics Data System (ADS)

Mula, Guido; Adelmann, C.; Moehl, S.; Oullier, J.; Daudin, B.

2001-11-01

We study the adsorption of Ga on (0001) GaN surfaces by reflection high-energy electron diffraction. It is shown that a dynamically stable Ga bilayer can be formed on the GaN surface for appropriate Ga fluxes and substrate temperatures. The influence of the presence of this Ga film on the growth mode of GaN on AlN(0001) by plasma-assisted molecular-beam epitaxy is studied. It is demonstrated that under nearly stoichiometric and N-rich conditions, the GaN layer relaxes elastically during the first stages of epitaxy. At high temperatures the growth follows a Stranski-Krastanov mode, whereas at lower temperatures kinetically formed flat platelets are observed. Under Ga-rich conditions-where a Ga bilayer is rapidly formed due to excess Ga accumulating on the surface-the growth follows a Frank-van der Merwe layer-by-layer mode at any growth temperature and no initial elastic relaxation occurs. Hence, it is concluded that excess Ga acts as a surfactant, effectively suppressing both Stranski-Krastanov islanding and platelet formation. It is further demonstrated that the Stranski-Krastanov transition is in competition with elastic relaxation by platelets, and it is only observed when relaxation by platelets is inefficient. As a result, a growth mode phase diagram is outlined for the growth of GaN on AlN(0001).

Doxorubicin-loaded poly (lactic-co-glycolic acid) nanoparticles coated with chitosan/alginate by layer by layer technology for antitumor applications.

PubMed

Chai, Fujuan; Sun, Linlin; He, Xinyi; Li, Jieli; Liu, Yuanfen; Xiong, Fei; Ge, Liang; Webster, Thomas J; Zheng, Chunli

2017-01-01

Natural polyelectrolyte multilayers of chitosan (CHI) and alginate (ALG) were alternately deposited on doxorubicin (DOX)-loaded poly (lactic-co-glycolic acid) (PLGA) nanoparticles (NPs) with layer by layer self-assembly to control drug release for antitumor activity. Numerous factors which influenced the multilayer growth on nano-colloidal particles were studied: polyelectrolyte concentration, NaCl concentration and temperature. Then the growth regime of the CHI/ALG multilayers was elucidated. The coated NPs were characterized by transmission electron microscopy, atomic force microscopy, X-ray diffraction and a zeta potential analyzer. In vitro studies demonstrated an undesirable initial burst release of DOX-loaded PLGA NPs (DOX-PLGA NPs), which was relieved from 55.12% to 5.78% through the use of the layer by layer technique. The release of DOX increased more than 40% as the pH of media decreased from 7.4 to 5.0. More importantly, DOX-PLGA (CHI/ALG) 3 NPs had superior in vivo tumor inhibition rates at 83.17% and decreased toxicity, compared with DOX-PLGA NPs and DOX in solution. Thus, the presently formulated PLGA-polyelectrolyte NPs have strong potential applications for numerous controlled anticancer drug release applications.

Identification of a keratinase-producing bacterial strain and enzymatic study for its improvement on shrink resistance and tensile strength of wool- and polyester-blended fabric.

PubMed

Cai, Shao-Bo; Huang, Zheng-Hua; Zhang, Xing-Qun; Cao, Zhang-Jun; Zhou, Mei-Hua; Hong, Feng

2011-01-01

A wool-degrading bacterium was isolated from decomposition wool fabrics in China. The strain, named 3096-4, showed excellent capability of removing cuticle layer of wool fibers, as demonstrated by removing cuticle layer completely within 48 h. According to the phenotypic characteristics and 16S rRNA profile, the isolate was classified as Pseudomonas. Bacteria growth and keratinase activity of the isolate were determined during cultivation on raw wool at different temperatures, initial pH, and rotation speed using orthogonal matrix method. Maximum growth and keratinase activity of the bacterium were observed under the condition including 30 °C, initial pH 7.6, and rotational speeds 160 rpm. The keratinase-containing crude enzyme prepared from 3096-4 was evaluated in the treatment of wool fabrics. The optimal condition of our enzymatic improvement of shrink resistance was the combination of 30 °C, initial pH 7.6, and rotation speeds 160 rpm. After the optimized treatment, the wool fabrics felting shrink was 4.1% at 6 h, and textile strength was not lost.

The growth of Treponema hyodysenteriae and other porcine intestinal spirochaetes in a liquid medium.

PubMed

Lemcke, R M; Bew, J; Burrows, M R; Lysons, R J

1979-05-01

A new simple method for the preparation of a liquid medium containing rabbit serum for the propagation of Treponema hyodysenteriae and other porcine intestinal spirochaetes is described. The medium, when dispensed in shallow layers and sealed under 10 per cent CO2 in nitrogen, had a redox potential not greater than -125mV and an initial pH of about 6.9 when buffered with bicarbonate. Growth of T hyodysenteriae developed more rapidly and viable counts reached higher levels at 42 degrees C than at 37 degrees C. Viable counts increased at least 10,000-fold after two to five days' incubation, depending on the temperature. Growth could be initiated from small inocula that failed to produce colonies on blood agar. Using a 1 per cent inoculum, the medium supported the growth of two strains of T hyodysenteriae through 10 serial passages.

Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okba, F.; Departement Optique et Mecanique de Precision, Faculte des Sciences de l'Ingenieur, Universite Ferhat Abbas, Setif 19000; Cherkashin, N.

2010-07-19

We have quantitatively studied by transmission electron microscopy the growth kinetics of platelets formed during the continuous hydrogenation of a Si substrate/SiGe/Si heterostructure. We have evidenced and explained the massive transfer of hydrogen from a population of platelets initially generated in the upper Si layer by plasma hydrogenation towards a population of larger platelets located in the SiGe layer. We demonstrate that this type of process can be used not only to precisely localize the micro-cracks, then the fracture line at a given depth but also to 'clean' the top layer from pre-existing defects.

Observation and modeling of mixing-layer development in HED blast-wave-driven shear flow

NASA Astrophysics Data System (ADS)

di Stefano, Carlos

2013-10-01

This talk describes work exploring the sensitivity to initial conditions of hydrodynamic mixing-layer growth due to shear flow in the high-energy-density regime. This work features an approach in two parts, experimental and theoretical. First, an experiment, conducted at the OMEGA-60 laser facility, seeks to measure the development of such a mixing layer. This is accomplished by placing a layer of low-density (initially of either 0.05 or 0.1 g/cm3, to vary the system's Atwood number) carbon foam against a layer of higher-density (initially 1.4 g/cm3) polyamide-imide that has been machined to a nominally-flat surface at its interface with the foam. Inherent roughness of this surface's finish is precisely measured and varied from piece to piece. Ten simultaneous OMEGA beams, comprising a 4.5 kJ, 1-ns pulse focused to a roughly 1-mm-diameter spot, irradiate a thin polycarbonate ablator, driving a blast wave into the foam, parallel to its interface with the polyamide-imide. The ablator is framed by a gold washer, such that the blast wave is driven only into the foam, and not into the polyamide-imide. The subsequent forward motion of the shocked foam creates the desired shear effect, and the system is imaged by X-ray radiography 35 ns after the beginning of the driving laser pulse. Second, a simulation is performed, intending to replicate the flow observed in the experiment as closely as possible. Using the resulting simulated flow parameters, an analytical model can be used to predict the evolution of the mixing layer, as well as track the motion of the fluid in the experiment prior to the snapshot seen in the radiograph. The ability of the model to predict growth of the mixing layer under the various conditions observed in the experiment is then examined. This work is funded by the Predictive Sciences Academic Alliances Program in NNSA-ASC via grant DEFC52- 08NA28616, by the NNSA-DS and SC-OFES Joint Program in High-Energy-Density Laboratory Plasmas, grant number DE-NA0001840, and by the National Laser Use.

Development of basal endosperm transfer cells in Sorghum bicolor (L.) Moench and its relationship with caryopsis growth.

PubMed

Wang, Hui-Hui; Wang, Zhong; Wang, Feng; Gu, Yun-Jie; Liu, Zhi

2012-04-01

During sorghum caryopsis development, endosperm epidermal cells near the basal main vascular bundle are specialized by depositing wall ingrowths, differentiating into basal endosperm transfer cells (BETCs). All the BETCs together compose the basal endosperm transfer layer (BETL). BETCs are the first cell type to become histologically differentiated during endosperm development. The initiation and subsequent development of BETCs shows the pattern of temporal and spatial gradient. The developmental process of BETL can be divided into four stages: initiation, differentiation, functional, and apoptosis stage. A placental sac full of nutrient solutions would emerge, enlarge, and eventually disappear between the outmost layer of BETL and nucellar cells during caryopsis development. BETCs have dense cytoplasm rich in mitochondria, lamellar rough endoplasmic reticulum, Golgi bodies, and their secretory vesicles. They show a series of typical characteristics of senescence such as nuclei distortion and subcellular organelle deterioration during their specialization. BETCs probably play an active role in nutrient transfer into the starchy endosperm and embryo. The occurrence, development, and apoptosis of BETCs are in close relation to the caryopsis growth and maturation especially the enrichment of endosperm and the growth of embryo. The timing when BETL is fully developed, composed of three to four layers in radial direction and 70 to 80 rows in tangential direction, consists with the timing when average daily gain of caryopsis dry weight reaches its maximum. It is conceivable that measures that delay the senescence and death of BETCs would help to increase the crop yield.

Superintendents on a Courageous Journey

ERIC Educational Resources Information Center

Reeves, Patricia L.

2009-01-01

Who would bet that superintendents would sign up for another layer of accountability--creating portfolios of their best work, tracking their personal growth as superintendents, documenting systemic change initiatives and compiling evidence of impact? The Michigan Association of School Administrators (MASA) made that bet, and in 2006 the state…

Thin layer model for nonlinear evolution of the Rayleigh-Taylor instability

NASA Astrophysics Data System (ADS)

Zhao, K. G.; Wang, L. F.; Xue, C.; Ye, W. H.; Wu, J. F.; Ding, Y. K.; Zhang, W. Y.

2018-03-01

On the basis of the thin layer approximation [Ott, Phys. Rev. Lett. 29, 1429 (1972)], a revised thin layer model for incompressible Rayleigh-Taylor instability has been developed to describe the deformation and nonlinear evolution of the perturbed interface. The differential equations for motion are obtained by analyzing the forces (the gravity and pressure difference) of fluid elements (i.e., Newton's second law). The positions of the perturbed interface are obtained from the numerical solution of the motion equations. For the case of vacuum on both sides of the layer, the positions of the upper and lower interfaces obtained from the revised thin layer approximation agree with that from the weakly nonlinear (WN) model of a finite-thickness fluid layer [Wang et al., Phys. Plasmas 21, 122710 (2014)]. For the case considering the fluids on both sides of the layer, the bubble-spike amplitude from the revised thin layer model agrees with that from the WN model [Wang et al., Phys. Plasmas 17, 052305 (2010)] and the expanded Layzer's theory [Goncharov, Phys. Rev. Lett. 88, 134502 (2002)] in the early nonlinear growth regime. Note that the revised thin layer model can be applied to investigate the perturbation growth at arbitrary Atwood numbers. In addition, the large deformation (the large perturbed amplitude and the arbitrary perturbed distributions) in the initial stage can also be described by the present model.

Direct TEM observations of growth mechanisms of two-dimensional MoS2 flakes

PubMed Central

Fei, Linfeng; Lei, Shuijin; Zhang, Wei-Bing; Lu, Wei; Lin, Ziyuan; Lam, Chi Hang; Chai, Yang; Wang, Yu

2016-01-01

A microscopic understanding of the growth mechanism of two-dimensional materials is of particular importance for controllable synthesis of functional nanostructures. Because of the lack of direct and insightful observations, how to control the orientation and the size of two-dimensional material grains is still under debate. Here we discern distinct formation stages for MoS2 flakes from the thermolysis of ammonium thiomolybdates using in situ transmission electron microscopy. In the initial stage (400 °C), vertically aligned MoS2 structures grow in a layer-by-layer mode. With the increasing temperature of up to 780 °C, the orientation of MoS2 structures becomes horizontal. When the growth temperature reaches 850 °C, the crystalline size of MoS2 increases by merging adjacent flakes. Our study shows direct observations of MoS2 growth as the temperature evolves, and sheds light on the controllable orientation and grain size of two-dimensional materials. PMID:27412892

DOE Office of Scientific and Technical Information (OSTI.GOV)

Napari, Mari, E-mail: mari.napari@jyu.fi; Malm, Jari; Lehto, Roope

ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al{sub 2}O{submore » 3} seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.« less

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

NASA Technical Reports Server (NTRS)

Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

1988-01-01

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

Domain and rim growth kinetics in stratifying foam films

NASA Astrophysics Data System (ADS)

Zhang, Yiran; Yilixiati, Subinuer; Sharma, Vivek

Foam films are freely standing thin liquid films that typically consist of two surfactant-laden surfaces that are ~5 nm - 10 micron apart. Sandwiched between these interfacial layers is a fluid that drains primarily under the influence of viscous and interfacial forces, including disjoining pressure. Interestingly, a layered ordering of micelles inside the foam films (thickness <100 nm) leads to a stepwise thinning phenomena called stratification, which results in a thickness-dependent variation in reflected light intensity, visualized as progressively darker shades of gray. Thinner, darker domains spontaneously grow within foam films. During the initial expansion, a rim forms near the contact line between the growing thinner domain and the surrounding region, which influences the dynamics of domain growth as well as stratification Using newly developed interferometry digitial imaging optical microscopy (IDIOM) technique, we capture the rim evolution dynamics. Finally, we also develop a theoretical model to describe both rim evolution and domain growth dynamics.

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Andersson, Thorvald; Ive, Tommy

2015-04-01

Plasma-assisted molecular beam epitaxy (MBE) was used to grow ZnO (0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 440°C-445°C and an O2 flow rate of 2.0-2.5 sccm, we obtained ZnO layers with smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm shown by AFM. The FWHM for X-ray rocking curves recorded across the ZnO(0002) and ZnO(10bar 15) reflections were 200 and 950 arcsec, respectively. These values showed that the mosaicity (tilt and twist) of the ZnO film was comparable to corresponding values of the underlying GaN buffer. It was found that a substrate temperature > 450°C and a high Zn-flux always resulted in a rough ZnO surface morphology. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82.3% and 73.0%, respectively and the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements showed that the layers were intrinsically n-type with an electron concentration of 1019 cm-3 and a Hall mobility of 50 cm2·V-1·s-1.

InAs wetting layer and quantum dots on GaAs(001) surface studied by in situ STM placed inside MBE growth chamber and kMC simulations based on first-principles calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsukamoto, S.; Arakawa, Y.; Bell, G. R.

2007-04-10

Dynamic images of InAs quantum dots (QDs) formation are obtained using a unique scanning tunneling microscope (STM) placed within the growth chamber. These images are interpreted with the aid of kinetic Monte Carlo (kMC) simulations of the QD nucleation process. Alloy fluctuations in the InGaAs wetting layer prior to QD formation assist in the nucleation of stable InAs islands containing tens of atoms which grow extremely rapidly to form QDs. Furthermore, not all deposited In is initially incorporated into the lattice, providing a large supply of material to rapidly form QDs at the critical thickness.

Stabilizing Nanocrystalline Oxide Nanofibers at Elevated Temperatures by Coating Nanoscale Surface Amorphous Films.

PubMed

Yao, Lei; Pan, Wei; Luo, Jian; Zhao, Xiaohui; Cheng, Jing; Nishijima, Hiroki

2018-01-10

Nanocrystalline materials often exhibit extraordinary mechanical and physical properties but their applications at elevated temperatures are impaired by the rapid grain growth. Moreover, the grain growth in nanocrystalline oxide nanofibers at high temperatures can occur at hundreds of degrees lower than that would occur in corresponding bulk nanocrystalline materials, which would eventually break the fibers. Herein, by characterizing a model system of scandia-stabilized zirconia using hot-stage in situ scanning transmission electron microscopy, we discover that the enhanced grain growth in nanofibers is initiated at the surface. Subsequently, we demonstrate that coating the fibers with nanometer-thick amorphous alumina layer can enhance their temperature stability by nearly 400 °C via suppressing the surface-initiated grain growth. Such a strategy can be effectively applied to other oxide nanofibers, such as samarium-doped ceria, yttrium-stabilized zirconia, and lanthanum molybdate. The nanocoatings also increase the flexibility of the oxide nanofibers and stabilize the high-temperature phases that have 10 times higher ionic conductivity. This study provides new insights into the surface-initiated grain growth in nanocrystalline oxide nanofibers and develops a facile yet innovative strategy to improve the high-temperature stability of nanofibers for a broad range of applications.

Liquid phase heteroepitaxial growth on convex substrate using binary phase field crystal model

NASA Astrophysics Data System (ADS)

Lu, Yanli; Zhang, Tinghui; Chen, Zheng

2018-06-01

The liquid phase heteroepitaxial growth on convex substrate is investigated with the binary phase field crystal (PFC) model. The paper aims to focus on the transformation of the morphology of epitaxial films on convex substrate with two different radiuses of curvature (Ω) as well as influences of substrate vicinal angles on films growth. It is found that films growth experience different stages on convex substrate with different radiuses of curvature (Ω). For Ω = 512 Δx , the process of epitaxial film growth includes four stages: island coupled with layer-by-layer growth, layer-by-layer growth, island coupled with layer-by-layer growth, layer-by-layer growth. For Ω = 1024 Δx , film growth only experience islands growth and layer-by-layer growth. Also, substrate vicinal angle (π) is an important parameter for epitaxial film growth. We find the film can grow well when π = 2° for Ω = 512 Δx , while the optimized film can be obtained when π = 4° for Ω = 512 Δx .

Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Manh-Hung; Tian, Liang; Chaker, Ahmad

ZnO thin films are interesting for applications in several technological fields, including optoelectronics and renewable energies. Nanodevice applications require controlled synthesis of ZnO structures at nanometer scale, which can be achieved via atomic layer deposition (ALD). However, the mechanisms governing the initial stages of ALD had not been addressed until very recently. Investigations into the initial nucleation and growth as well as the atomic structure of the heterointerface are crucial to optimize the ALD process and understand the structure-property relationships for ZnO. We have used a complementary suite of in situ synchrotron x-ray techniques to investigate both the structural andmore » chemical evolution during ZnO growth by ALD on two different substrates, i.e., SiO2 and Al2O3, which led us to formulate an atomistic model of the incipient growth of ZnO. The model relies on the formation of nanoscale islands of different size and aspect ratio and consequent disorder induced in the Zn neighbors' distribution. However, endorsement of our model requires testing and discussion of possible alternative models which could account for the experimental results. In this work, we review, test, and rule out several alternative models; the results confirm our view of the atomistic mechanisms at play, which influence the overall microstructure and resulting properties of the final thin film.« less

The growth process of first water layer and crystalline ice on the Rh(111) surface

NASA Astrophysics Data System (ADS)

Beniya, Atsushi; Sakaguchi, Yuji; Narushima, Tetsuya; Mukai, Kozo; Yamashita, Yoshiyuki; Yoshimoto, Shinya; Yoshinobu, Jun

2009-01-01

The adsorption states and growth process of the first layer and multilayer of water (D2O) on Rh(111) above 135K were investigated using infrared reflection absorption spectroscopy (IRAS), temperature programed desorption, spot-profile-analysis low-energy electron diffraction, and scanning tunneling microscopy (STM). At the initial stage, water molecules form commensurate (√3×√3)R30° islands, whose size is limited for several hexagonal units; the average diameter is ˜2.5nm. This two-dimensional (2D) island includes D-down species, and free OD species exist at the island edge. With increasing coverage, the D-up species starts to appear in IRAS. At higher coverages, the 2D islands are connected in STM images. By the titration of Xe adsorption we estimated that the D-down domain occupies about 55% on Rh(111) at the saturation coverage. Further adsorption of water molecules forms three-dimensional ice crystallites on the first water layer; thus, the growth mode of crystalline water layers on Rh(111) is a Stranski-Krastanov type. We have found that an ice crystallite starts to grow on D-down domains and the D-down species do not reorient upon the formation of a crystalline ice.

Influences of surface hydrophilicity on frost formation on a vertical cold plate under natural convection conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhongliang; Zhang, Xinghua; Wang, Hongyan

2007-07-15

Surface hydrophilicity has a strong influence on frost nucleation according to phase transition theory. To study this effect, a close observation of frost formation and deposition processes on a vertical plate was made under free convection conditions. The formation and shape variation of frost crystals during the initial period are described and the frost thickness variation with time on both hydrophobic and plain copper cold surfaces are presented. The various influencing factors are discussed in depth. The mechanism of surface hydrophilicity influence on frost formation was analyzed theoretically. This revealed that increasing the contact angle can increase the potential barriermore » and restrain crystal nucleation and growth and thus frost deposition. The experimental results show that the initial water drops formed on a hydrophobic surface are smaller and remain in the liquid state for a longer time compared with ones formed on a plain copper surface. It is also observed that the frost layer deposited on a hydrophobic surface is loose and weak. Though the hydrophobic surface can retard frost formation to a certain extent and causes a looser frost layer, our experimental results show that it does not depress the growth of the frost layer. (author)« less

Initial Steps of Rubicene Film Growth on Silicon Dioxide.

PubMed

Scherwitzl, Boris; Lukesch, Walter; Hirzer, Andreas; Albering, Jörg; Leising, Günther; Resel, Roland; Winkler, Adolf

2013-02-28

The film growth of the conjugated organic molecule rubicene on silicon dioxide was studied in detail. Since no structural data of the condensed material were available, we first produced high quality single crystals from solution and determined the crystal structure. This high purity material was used to prepare ultrathin films under ultrahigh vacuum conditions, by physical vapor deposition. Thermal desorption spectroscopy (TDS) was applied to delineate the adsorption and desorption kinetics. It could be shown that the initial sticking coefficient is only 0.2 ± 0.05, but the sticking coefficient increases with increasing coverage. TDS further revealed that first a closed, weakly bound bilayer develops (wetting layer), which dewets after further deposition of rubicene, leading to an island-like layer. These islands are crystalline and exhibit the same structure as the solution grown crystals. The orientation of the crystallites is with the (001) plane parallel to the substrate. A dewetting of the closed bilayer was also observed when the film was exposed to air. Furthermore, Ostwald ripening of the island-like film takes place under ambient conditions, leading to films composed of few, large crystallites. From TDS, we determined the heat of evaporation from the multilayer islands to be 1.47 eV, whereas the desorption energy from the first layer is only 1.25 eV.

Initial Steps of Rubicene Film Growth on Silicon Dioxide

PubMed Central

2013-01-01

The film growth of the conjugated organic molecule rubicene on silicon dioxide was studied in detail. Since no structural data of the condensed material were available, we first produced high quality single crystals from solution and determined the crystal structure. This high purity material was used to prepare ultrathin films under ultrahigh vacuum conditions, by physical vapor deposition. Thermal desorption spectroscopy (TDS) was applied to delineate the adsorption and desorption kinetics. It could be shown that the initial sticking coefficient is only 0.2 ± 0.05, but the sticking coefficient increases with increasing coverage. TDS further revealed that first a closed, weakly bound bilayer develops (wetting layer), which dewets after further deposition of rubicene, leading to an island-like layer. These islands are crystalline and exhibit the same structure as the solution grown crystals. The orientation of the crystallites is with the (001) plane parallel to the substrate. A dewetting of the closed bilayer was also observed when the film was exposed to air. Furthermore, Ostwald ripening of the island-like film takes place under ambient conditions, leading to films composed of few, large crystallites. From TDS, we determined the heat of evaporation from the multilayer islands to be 1.47 eV, whereas the desorption energy from the first layer is only 1.25 eV. PMID:23476720

Damage development under compression-compression fatigue loading in a stitched uniwoven graphite/epoxy composite material

NASA Technical Reports Server (NTRS)

Vandermey, Nancy E.; Morris, Don H.; Masters, John E.

1991-01-01

Damage initiation and growth under compression-compression fatigue loading were investigated for a stitched uniweave material system with an underlying AS4/3501-6 quasi-isotropic layup. Performance of unnotched specimens having stitch rows at either 0 degree or 90 degrees to the loading direction was compared. Special attention was given to the effects of stitching related manufacturing defects. Damage evaluation techniques included edge replication, stiffness monitoring, x-ray radiography, residual compressive strength, and laminate sectioning. It was found that the manufacturing defect of inclined stitches had the greatest adverse effect on material performance. Zero degree and 90 degree specimen performances were generally the same. While the stitches were the source of damage initiation, they also slowed damage propagation both along the length and across the width and affected through-the-thickness damage growth. A pinched layer zone formed by the stitches particularly affected damage initiation and growth. The compressive failure mode was transverse shear for all specimens, both in static compression and fatigue cycling effects.

Density functional theory simulation of titanium migration and reaction with oxygen in the early stages of oxidation of equiatomic NiTi alloy.

PubMed

Nolan, Michael; Tofail, Syed A M

2010-05-01

The biocompatibility of NiTi shape memory alloys (SMA) has made possible applications in self-expandable cardio-vascular stents, stone extraction baskets, catheter guide wires and other invasive and minimally invasive biomedical devices. The NiTi intermetallic alloy spontaneously forms a thin passive layer of TiO(2), which provides its biocompatibility. The oxide layer is thought to form as the Ti in the alloy surface reacts with oxygen, resulting in a depletion of Ti in the subsurface region - experimental evidence indicates formation of a Ni-rich layer below the oxide film. In this paper, we study the initial stages of oxide growth on the (110) surface of the NiTi alloy to understand the formation of alloy/oxide interface. We initially adsorb atomic and molecular oxygen on the (110) surface and then successively add O(2) molecules, up to 2 monolayer of O(2). Oxygen adsorption always results in a large energy gain. With atomic oxygen, Ti is pulled out of the surface layer leaving behind a Ni-rich subsurface region. Molecular O(2), on the other hand adsorbs dissociatively and pulls a Ti atom farther out of the surface layer. The addition of further O(2) up to 1 monolayer is also dissociative and results in complete removal of Ti from the initial surface layer. When further O(2) is added up to 2 monolayer, Ti is pulled even further out of the surface and a single thin layer of composition O-Ti-O is formed. The electronic structure shows that the metallic character of the alloy is unaffected by interaction with oxygen and formation of the oxide layer, consistent with the oxide layer being a passivant. Copyright 2010 Elsevier Ltd. All rights reserved.

Sulfide and Oxide Heterostructures For the SrTiO3 Thin Film Growth on Si and Their Structural and Interfacial Stabilities

NASA Astrophysics Data System (ADS)

Yoo, Young‑Zo; Song, Jeong‑Hwan; Konishi, Yoshinori; Kawasaki, Masashi; Koinuma, Hideomi; Chikyow, Toyohiro

2006-03-01

Epitaxial SrTiO3 (STO) thin films with high electrical properties were grown on Si using ZnS single- and SrS/MnS hetero-buffer layers. STO films on both ZnS-buffered and SrS/MnS-buffered Si showed two growth orientations, (100) and (110). The temperature dependence of the growth orientation for STO films was different for the ZnS single-buffer layer in comparison with the SrS/MnS heterobuffer layers. (100) growth of STO films on SrS/MnS-buffered Si became dominant at high temperatures about 700 °C, while (100) growth of STO films on ZnS-buffered Si became dominant at a relatively low growth temperature of 550 °C. STO(100) films on ZnS-buffered and SrS/MnS-buffered Si showed lattice and domain matches for epitaxial relationships with [001]ZnS\\parallel[011]STO and SrS[001]\\parallel[011]STO, respectively via 45° in-plane rotation of STO films relative to both ZnS and SrS layers. The ZnS buffer layer contained many stacking faults because of the mismatch between ZnS and Si, however, those defects were terminated at the ZnS/STO interface. In contrast, the MnS buffer was very stable against stacking defect formation. Transmission electron microscopy measurements revealed the presence of a disordered region at the ZnS/Si and MnS/Si interfaces. Auger electron spectroscopy and transmission electron microscopy results showed that a good MnS/Si interface at the initial growth stage degraded to a SiS2-x-rich phase during MnS deposition and again into a SiO2-x-rich phase during STO deposition at the high growth temperature of 700 °C. It was also observed that STO on SrS/MnS-buffered Si showed a markedly high dielectric constant compared with that of STO on ZnS-buffered Si.

Molecular dynamics simulation study of nanoscale passive oxide growth on Ni-Al alloy surfaces at low temperatures

NASA Astrophysics Data System (ADS)

Sankaranarayanan, Subramanian K. R. S.; Ramanathan, Shriram

2008-08-01

Oxidation kinetics of Ni-Al (100) alloy surface is investigated at low temperatures (300-600 K) and at different gas pressures using molecular dynamics (MD) simulations with dynamic charge transfer between atoms. Monte Carlo simulations employing the bond order simulation model are used to generate the surface segregated minimum energy initial alloy configurations for use in the MD simulations. In the simulated temperature-pressure-composition regime for Ni-Al alloys, we find that the oxide growth curves follow a logarithmic law beyond an initial transient regime. The oxidation rates for Ni-Al alloys were found to decrease with increasing Ni composition. Structure and dynamical correlations in the metal/oxide/gas environments are used to gain insights into the evolution and morphology of the growing oxide film. Oxidation of Ni-Al alloys is characterized by the absence of Ni-O bond formation. Oxide films formed on the various simulated metal surfaces are amorphous in nature and have a limiting thickness ranging from ˜1.7nm for pure Al to 1.1 nm for 15% Ni-Al surfaces. Oxide scale analysis indicates significant charge transfer as well as variation in the morphology and structure of the oxide film formed on pure Al and 5% Ni-Al alloy. For oxide scales thicker than 1 nm, the oxide structure in case of pure Al exhibits a mixed tetrahedral (AlO4˜37%) and octahedral (AlO6˜19%) environment, whereas the oxide scale on Ni-Al alloy surface is almost entirely composed of tetrahedral environment (AlO4˜60%) with very little AlO6 (<1%) . The oxide growth kinetic curves are fitted to Arrhenius-type plots to get an estimate of the activation energy barriers for metal oxidation. The activation energy barrier for oxidation on pure Al was found to be 0.3 eV lower than that on 5% Ni-Al surface. Atomistic observations as well as calculated dynamical correlation functions indicate a layer by layer growth on pure Al, whereas a transition from an initial island growth mode (<75ps) to a layer by layer mode (>100ps) occurs in case of 5% Ni-Al alloy. The oxide growth on both pure Al and Ni-Al alloy surfaces occurs by inward anion and outward cation diffusions. The cation diffusion in both the cases is similar, whereas the anion diffusion in case of 5% Ni-Al is 25% lower than pure Al, thereby resulting in reduced self-limiting thickness of oxide scale on the alloy surface. The simulation findings agree well with previously reported experimental observations of oxidation on Ni-Al alloy surface.

Survival and growth of micro-organisms on air filtration media during initial loading

NASA Astrophysics Data System (ADS)

Kemp, P. C.; Neumeister-Kemp, H. G.; Lysek, G.; Murray, F.

A new type of air filtration medium made from a hygroscopic polymer fibre and constructed in three layers was investigated to measure the survival and growth of micro-organisms on this medium in comparison to a widely used fibreglass medium. Both materials were supplied by the manufacturer and tested "blind". The materials were loaded in an Airotester unit. Micro-organisms were analysed at 2 weekly intervals for 8 weeks by washing filter samples and plating the solution on to agar media and by vital fluorescence microscopy. Filter samples were also weighed to calculate water content and the pH value of the filter material was measured in the wash out eluate. Vital fluorescence microscopy revealed fungi were able to grow on fibreglass medium, but not on the multi-layered polymer. The colony forming unit (CFU) counts did not increase at a steady rate. There was a significant increase on both materials ( P<0.001) during the first 2 weeks which was then followed by a significant decrease in 4 weeks ( P<0.001) but the CFU then significantly increased in 6 weeks ( P<0.05) which were the highest CFU counts during the 2-month trial. There was a significant difference in CFU counts between the filter materials only in week 2 ( P⩽0.001) and week 4 ( P=0.04). Fewer micro-organisms were extracted from the multi-layered polymer than from the fibreglass medium. Fewer fungal species were identified on the multi-layered polymer (nine species) than on the fibreglass medium (13 species). The pH value on the multi-layered polymer was significantly higher than the fibreglass material but only when clean ( P<0.010) and after 2 weeks ( P<0.001). A significantly higher water content on the fibreglass medium ( P<0.001) also indicated a habitat where a wider range of fungal species and bacteria are able to survive. While there was a reduced survival and growth of micro-organisms on the multi-layered polymer material in the initial month of service life, this advantage was cancelled by the supply of nutrients (particulate matter) that were accumulated on the filter materials after 6 weeks.

Late-time growth rate, mixing, and anisotropy in the multimode narrowband Richtmyer-Meshkov instability: The θ-group collaboration

NASA Astrophysics Data System (ADS)

Thornber, B.; Griffond, J.; Poujade, O.; Attal, N.; Varshochi, H.; Bigdelou, P.; Ramaprabhu, P.; Olson, B.; Greenough, J.; Zhou, Y.; Schilling, O.; Garside, K. A.; Williams, R. J. R.; Batha, C. A.; Kuchugov, P. A.; Ladonkina, M. E.; Tishkin, V. F.; Zmitrenko, N. V.; Rozanov, V. B.; Youngs, D. L.

2017-10-01

Turbulent Richtmyer-Meshkov instability (RMI) is investigated through a series of high resolution three-dimensional simulations of two initial conditions with eight independent codes. The simulations are initialised with a narrowband perturbation such that instability growth is due to non-linear coupling/backscatter from the energetic modes, thus generating the lowest expected growth rate from a pure RMI. By independently assessing the results from each algorithm and computing ensemble averages of multiple algorithms, the results allow a quantification of key flow properties as well as the uncertainty due to differing numerical approaches. A new analytical model predicting the initial layer growth for a multimode narrowband perturbation is presented, along with two models for the linear and non-linear regimes combined. Overall, the growth rate exponent is determined as θ =0.292 ±0.009 , in good agreement with prior studies; however, the exponent is decaying slowly in time. Also, θ is shown to be relatively insensitive to the choice of mixing layer width measurements. The asymptotic integral molecular mixing measures Θ =0.792 ±0.014 , Ξ =0.800 ±0.014 , and Ψ =0.782 ±0.013 are lower than some experimental measurements but within the range of prior numerical studies. The flow field is shown to be persistently anisotropic for all algorithms, at the latest time having between 49% and 66% higher kinetic energy in the shock parallel direction compared to perpendicular and does not show any return to isotropy. The plane averaged volume fraction profiles at different time instants collapse reasonably well when scaled by the integral width, implying that the layer can be described by a single length scale and thus a single θ. Quantitative data given for both ensemble averages and individual algorithms provide useful benchmark results for future research.

Structural Characterization of Aluminum (Oxy)hydroxide Films at the Muscovite (001)–Water Interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sang Soo; Schmidt, Moritz; Fister, Timothy T.

2016-01-19

The formation of Al (oxy)hydroxide on the basal surface of muscovite mica was investigated to understand how the structure of the substrate controls the nucleation and growth of secondary phases. Atomic force microscopy images showed that solid phases nucleated on the surface initially as two-dimensional islands that were <= 10 angstrom in height and <= 200 angstrom in diameter after 16-50 h of reaction in a 100 mu M AlCl3 solution at pH 4.2 at room temperature. High-resolution X-ray reflectivity data indicated that these islands were gibbsite layers whose basic unit is composed of a plane of Al ions octahedrallymore » coordinated to oxygen or hydroxyl groups. The formation of gibbsite layers is likely favored because of the structural similarity between its basal plane and the underlying mica surface. After 700-2000 h of reaction, a thicker and continuous film had formed on top of the initial gibbsite layers. X-ray diffraction data showed that this film was composed of diaspore that grew predominantly with its [040] and [140] crystallographic directions oriented along the muscovite [001] direction. These results show the structural characteristics of the muscovite (001) and Al (oxy)hydroxide film interface where presumed epitaxy had facilitated nucleation of metastable gibbsite layers which acted as a structural anchor for the subsequent growth of thermodynamically stable diaspore grown from a mildly acidic and Al-rich solution.« less

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Escobedo-Cousin, Enrique; Vassilevski, Konstantin; Hopf, Toby

Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such asmore » the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.« less

Capping hazardous red mud using acidic soil with an embedded layer of zeolite for plant growth.

PubMed

Ma, Yingqun; Si, Chunhua; Lin, Chuxia

2014-01-01

A nearly three-year microcosm experiment was conducted to test the effectiveness of capping red mud using acidic soil with an embedded layer of zeolite in sustaining the growth of a grass species. This 'sandwich-structured' design allowed self-sustaining growth of the plants under rain-fed conditions no matter whether the underlying red mud was neutralized or not. During the initial stage, the plants grew better when the red mud was not neutralized with MgCl2 probably due to pH rise in the root zone. Neutralization of red mud led to salinization and pH decrease in the root zone. However, the difference in plant growth performance between these scenarios became less remarkable over time due to gradual improvement of soil conditions in the neutralized scenarios. Continuous leaching of soluble salts and alkali by rainwater extended the root zone to the red mud layer. As a result of vegetative production, soil organic matter rapidly accumulated. This, combined with increase in pH and decrease in salinity, markedly facilitated microbial activities and consequently improved the supply of nutrients. This study provides abasis for field-scale experimental design that will have implications for effectively establishing vegetative cover in red mud disposal sites to control dust hazards.

Simulation of nucleation and growth of atomic layer deposition phosphorus for doping of advanced FinFETs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seidel, Thomas E., E-mail: zoomtotom@gmail.com; Goldberg, Alexander; Halls, Mat D.

2016-01-15

Simulations for the nucleation and growth of phosphorus films were carried out using density functional theory. The surface was represented by a Si{sub 9}H{sub 12} truncated cluster surface model with 2 × 1-reconstructured (100) Si-OH terminations for the initial reaction sites. Chemistries included phosphorous halides (PF{sub 3}, PCl{sub 3}, and PBr{sub 3}) and disilane (Si{sub 2}H{sub 6}). Atomic layer deposition (ALD) reaction sequences were illustrated with three-dimensional molecular models using sequential PF{sub 3} and Si{sub 2}H{sub 6} reactions and featuring SiFH{sub 3} as a byproduct. Exothermic reaction pathways were developed for both nucleation and growth for a Si-OH surface. Energetically favorable reactionsmore » for the deposition of four phosphorus atoms including lateral P–P bonding were simulated. This paper suggests energetically favorable thermodynamic reactions for the growth of elemental phosphorus on (100) silicon. Phosphorus layers made by ALD are an option for doping advanced fin field-effect transistors (FinFETs). Phosphorus may be thermally diffused into the silicon or recoil knocked in; simulations of the recoil profile of phosphorus into a FinFET surface are illustrated.« less

Evaluation of indigenous potent mushroom growth promoting bacteria (MGPB) on Agaricus bisporus production.

PubMed

Zarenejad, F; Yakhchali, B; Rasooli, I

2012-01-01

Mushrooms such as Agaricus bisporus, are cultivated for food worldwide. Fruit body initiation in Agaricus bisporus is a phase change from the vegetative to the reproductive stage which depends on the presence of a casing layer with particular physical, chemical and microbiological properties. The phase change is achieved practically by environmental manipulation and the presence of naturally occurring bacteria such as Pseuodomonas putida. In this study, 274 individual bacterial isolates were collected by screening the casing layer of 14 edible mushroom farms. The isolates were analysed with respect to biochemical properties, organic and inorganic phosphate solubilization, production of siderophore and growth in the presence of volatile compound of 1-octen-3-ol. It was found that approximately 97% of the strains were able to grow in the presence of 1-octen-3-ol and 36% were able to solubilize phosphorus. Among the isolates, 23 strains were selected as potent mushroom growth promoting bacteria (MGPB) for inoculation of the casing layer. Field experiments using these strains showed various promoting effects on production of mushroom. Finally, 2 strains (strains Bt4 and Ps7) showing the highest increase in A. bisporus production, were characterized as Pseuodomonas putida by molecular methods and identified as the best suited growth promoting inoculants for application in production farms for increasing the mushroom yield.

Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Haiyan; Wang, Wenliang; Yang, Weijia

2015-05-14

AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is amore » direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.« less

MBE Growth of InN/GaN(0001) and Shape Transitions of InN islands

NASA Astrophysics Data System (ADS)

Cao, Yongge; Xie, Maohai; Liu, Ying; Ng, Y. F.

2003-03-01

Plasma-assisted molecular-beam epitaxial growth of InN on GaN(0001) is investigated. Both layer-by-layer and Stranski-Krastanov (SK) growth modes are observed under different growth windows. Strain relaxation is studied by real-time recording of the in-plane lattice spacing evolutions on RHEED pattern, which suggest a gradual relaxation of the strain in InN film commenced during the first bilayer (BL) deposition and almost completed after 2-4 BLs. For SK growth, 3D islanding initiates after the strain has mostly been relieved, presumably by dislocations. Based on statistical analysis, the shape transitions of 3D islands are firstly observed in the III-nitrides system. The InN islands transform gradually from pyramids to platelets with increasing of In flux. Under In-rich growth condition, the reverse trend of island shape evolution dependence on volume size, compared with Equilibrium Crystal Shape (ECS) theory, is induced by the Indium self-surfactant effects, in which Indium adlayer on the top surface of InN islands will depress the thermodynamic driving force for the vertical growth of 3D islands. Lateral growth of 3D islands is not only the result of kinetic process but also favored by thermodynamics while Indium self-surfactant exist.

Distributed bragg reflector using AIGaN/GaN

DOEpatents

Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

2004-08-10

A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates

NASA Astrophysics Data System (ADS)

Akazawa, Housei

2018-04-01

Morphological evolution of Ge layers on SiO2 substrates grown by photo-excited chemical vapor deposition from GeH4 was monitored in real time by recording (Ψ, Δ) angles of spectroscopic ellipsometry and ex-situ analyzed by atomic force microscopy (AFM). Distinct Ψ-Δ trajectory shapes were demonstrated to discriminate the two-dimensional (2D) and three-dimensional (3D) growth modes. While the trajectory of 2D growth is characterized by a one-turn spiral, that of 3D growth consisted of three sections corresponding to initial wetting of the SiO2 surface, creation of nucleation centers, and dot growth. The critical point where the system turns into 2D or 3D growth can be in situ identified in terms of the directions of the Ψ-Δ trajectories. AFM images revealed characteristic changes in the microstructure, including self-assembling dots and dots merging with one another. While the root-mean-square surface roughness increased linearly against film thickness, the maximum peak-to-valley height deviated once from linear dependence and later returned back to it, which reflected coarsening of dots and embedding of valleys between dots.

Synthesis of Epitaxial Single-Layer MoS2 on Au(111).

PubMed

Grønborg, Signe S; Ulstrup, Søren; Bianchi, Marco; Dendzik, Maciej; Sanders, Charlotte E; Lauritsen, Jeppe V; Hofmann, Philip; Miwa, Jill A

2015-09-08

We present a method for synthesizing large area epitaxial single-layer MoS2 on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS2 islands to a continuous MoS2 layer. An exceptionally good control over the MoS2 coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS2 nanoislands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within the MoS2 islands, we identify domains rotated by 60° that lead to atomically sharp line defects at domain boundaries. As the MoS2 coverage approaches the limit of a complete single layer, the formation of bilayer MoS2 islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS2 samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS2 layer from vacuum is not found to affect its quality.

Investigation of superlattice device structures

NASA Technical Reports Server (NTRS)

Gergis, I. S.; Manasevit, H. M.; Lin, A. L.; Jones, A. B.

1985-01-01

This report describes the investigation of growth properties, and the structure of epitaxial multilayer Si(Si(1x)Ge(x)) films grown on bulk Silicon Substrates. It also describes the fabrication and characterization of MOSFET and MESFET devices made on these epitaxial films. Films were grown in a CVD reactor using hydrides of Si and Ge with H2 and He as carrier gases. Growth temperatures were between 900 C and 1050 C with most films grown at 1000 C. Layer thickness was between 300A and 2000A and total film thickness was between 0.25 micro m and 7 micro m. The Ge content (X) in the alloy layers was between .05 and 0.2. N-type multilayer films grown on (100) p-type Si showed Hall mobility in the range 1000 to 1500 sq cm/v for an average carrier concentration of approx. 10 to the 16th power/cu cm. This is up to 50% higher than the Hall mobility observed in epitaxial Si films grown under the same conditions and with the same average carrier concentration. The mobility enhancement occurred in films with average carrier concentration (n) from 0.7 x 10 to the 16th power to 2 x 10 to the 17th power/cu cm, and total film thickness greater than 1.0 micro m. No mobility enhancement was seen in n-type multilayer films grown on (111) Si or in p-type multilayer films. The structure of the films was investigated was using SEM, TEM, AES, SIMS, and X-ray double crystal diffraction techniques. The film composition profile (AES, SIMS) showed that the transition region between layers is of the order of about 100A. The TEM examination revealed a well defined layered structure with fairly sharp interfaces and good crystalline quality. It also showed that the first few layers of the film (closest to the substrate) are uneven, most probably due to the initial growth pattern of the epitaxial film where growth occurs first in isolated islands that eventually growth and coalesce. The X-ray diffraction measurement determined the elastic strain and strain relief in the alloy layers of the film and the elastic strain in the intervening Si layers.

The nonlinear evolution of modes on unstable stratified shear layers

NASA Technical Reports Server (NTRS)

Blackaby, Nicholas; Dando, Andrew; Hall, Philip

1993-01-01

The nonlinear development of disturbances in stratified shear flows (having a local Richardson number of value less than one quarter) is considered. Such modes are initially fast growing but, like related studies, we assume that the viscous, non-parallel spreading of the shear layer results in them evolving in a linear fashion until they reach a position where their amplitudes are large enough and their growth rates have diminished sufficiently so that amplitude equations can be derived using weakly nonlinear and non-equilibrium critical-layer theories. Four different basic integro-differential amplitude equations are possible, including one due to a novel mechanism; the relevant choice of amplitude equation, at a particular instance, being dependent on the relative sizes of the disturbance amplitude, the growth rate of the disturbance, its wavenumber, and the viscosity of the fluid. This richness of choice of possible nonlinearities arises mathematically from the indicial Frobenius roots of the governing linear inviscid equation (the Taylor-Goldstein equation) not, in general, differing by an integer. The initial nonlinear evolution of a mode will be governed by an integro-differential amplitude equations with a cubic nonlinearity but the resulting significant increase in the size of the disturbance's amplitude leads on to the next stage of the evolution process where the evolution of the mode is governed by an integro-differential amplitude equations with a quintic nonlinearity. Continued growth of the disturbance amplitude is expected during this stage, resulting in the effects of nonlinearity spreading to outside the critical level, by which time the flow has become fully nonlinear.

Large-scale recrystallization of the S-layer of Bacillus coagulans E38-66 at the air/water interface and on lipid films.

PubMed Central

Pum, D; Weinhandl, M; Hödl, C; Sleytr, U B

1993-01-01

S-layer protein isolated from Bacillus coagulans E38-66 could be recrystallized into large-scale coherent monolayers at an air/water interface and on phospholipid films spread on a Langmuir-Blodgett trough. Because of the asymmetry in the physiochemical surface properties of the S-layer protein, the subunits were associated with their more hydrophobic outer face with the air/water interface and oriented with their negatively charged inner face to the zwitterionic head groups of the dipalmitoylphosphatidylcholine and dipalmitoylphosphatidylethanolamine (DPPE) monolayer films. The dynamic crystal growth at both types of interfaces was first initiated at several distant nucleation points. The individual monocrystalline areas grew isotropically in all directions until the front edge of neighboring crystals was met. The recrystallized S-layer protein and the S-layer-DPPE layer could be chemically cross-linked from the subphase with glutaraldehyde. Images PMID:8478338

Direct grafting of anti-fouling polyglycerol layers to steel and other technically relevant materials.

PubMed

Weber, Theresa; Bechthold, Maren; Winkler, Tobias; Dauselt, John; Terfort, Andreas

2013-11-01

Direct grafting of hyperbranched polyglycerol (PG) layers onto the oxide surfaces of steel, aluminum, and silicon has been achieved through surface-initiated polymerization of 2-hydroxymethyloxirane (glycidol). Optimization of the deposition conditions led to a protocol that employed N-methyl-2-pyrrolidone (NMP) as the solvent and temperatures of 100 and 140 °C, depending on the substrate material. In all cases, a linear growth of the PG layers could be attained, which allows for control of film thickness by altering the reaction time. At layer thicknesses >5 nm, the PG layers completely suppressed the adhesion of albumin, fibrinogen, and globulin. These layers were also at least 90% bio-repulsive for two bacteria strains, E. coli and Acinetobacter baylyi, with further improvement being observed when the PG film thickness was increased to 17 nm (up to 99.9% bio-repulsivity on silicon). Copyright © 2013 Elsevier B.V. All rights reserved.

Nanoparticle layer deposition for highly controlled multilayer formation based on high- coverage monolayers of nanoparticles

PubMed Central

Liu, Yue; Williams, Mackenzie G.; Miller, Timothy J.; Teplyakov, Andrew V.

2015-01-01

This paper establishes a strategy for chemical deposition of functionalized nanoparticles onto solid substrates in a layer-by-layer process based on self-limiting surface chemical reactions leading to complete monolayer formation within the multilayer system without any additional intermediate layers – nanoparticle layer deposition (NPLD). This approach is fundamentally different from previously established traditional layer-by-layer deposition techniques and is conceptually more similar to well-known atomic and molecular – layer deposition processes. The NPLD approach uses efficient chemical functionalization of the solid substrate material and complementary functionalization of nanoparticles to produce a nearly 100% coverage of these nanoparticles with the use of “click chemistry”. Following this initial deposition, a second complete monolayer of nanoparticles is deposited using a copper-catalyzed “click reaction” with the azide-terminated silica nanoparticles of a different size. This layer-by-layer growth is demonstrated to produce stable covalently-bound multilayers of nearly perfect structure over macroscopic solid substrates. The formation of stable covalent bonds is confirmed spectroscopically and the stability of the multilayers produced is tested by sonication in a variety of common solvents. The 1-, 2- and 3-layer structures are interrogated by electron microscopy and atomic force microscopy and the thickness of the multilayers formed is fully consistent with that expected for highly efficient monolayer formation with each cycle of growth. This approach can be extended to include a variety of materials deposited in a predesigned sequence on different substrates with a highly conformal filling. PMID:26726273

Growth of carbon structured over Pd, Pt and Ni: A comparative DFT study

NASA Astrophysics Data System (ADS)

Quiroga, Matías Abel

2013-03-01

To elucidate the graphene-like structures mechanisms growth over the M(1 1 1) surface (M = Pd, Pt and Ni) we performed ab initio calculus in the frame of density functional theory with the exchange-correlation functional treated according to the Generalized Gradient Approximation (GGA). In order to avoid the problem that represent the complex interaction between the well formed graphene layer and the metallic surface, we recreate the carbon rings formation initial steps, by adding one by one carbon atoms over M(1 1 1) surface. With this strategy, the chemical bonding is always present until the graphene layer is well formed, in which case the GGA neglects van der Waals dispersive forces. We investigate the electronic properties by studying the band structure and the density of states.

Characterization of Blistering and Delamination in Depleted Uranium Hohlraums

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biobaum, K. J. M.

2013-03-01

Blistering and delamination are the primary failure mechanisms during the processing of depleted uranium (DU) hohlraums. These hohlraums consist of a sputter-deposited DU layer sandwiched between two sputter-deposited layers of gold; a final thick gold layer is electrodeposited on the exterior. The hohlraum is deposited on a copper-coated aluminum mandrel; the Al and Cu are removed with chemical etching after the gold and DU layers are deposited. After the mandrel is removed, blistering and delamination are observed on the interiors of some hohlraums, particularly at the radius region. It is hypothesized that blisters are caused by pinholes in the coppermore » and gold layers; etchant leaking through these holes reaches the DU layer and causes it to oxidize, resulting in a blister. Depending on the residual stress in the deposited layers, blistering can initiate larger-scale delamination at layer interfaces. Scanning electron microscopy indicates that inhomogeneities in the machined aluminum mandrel are replicated in the sputter-deposited copper layer. Furthermore, the Cu layer exhibits columnar growth with pinholes that likely allow etchant to come in contact with the gold layer. Any inhomogeneities or pinholes in this initial gold layer then become nucleation sites for blistering. Using a focused ion beam system to etch through the gold layer and extract a cross-sectional sample for transmission electron microscopy, amorphous, intermixed layers at the gold/DU interfaces are observed. Nanometer-sized bubbles in the sputtered and electrodeposited gold layers are also present. Characterization of the morphology and composition of the deposited layers is the first step in determining modifications to processing parameters, with the goal of attaining a significant improvement in hohlraum yield.« less

Measurement of Initial Conditions at Nozzle Exit of High Speed Jets

NASA Technical Reports Server (NTRS)

Panda, J.; Zaman, K. B. M. Q.; Seasholtz, R. G.

2004-01-01

The time averaged and unsteady density fields close to the nozzle exit (0.1 less than or = x/D less than or = 2, x: downstream distance, D: jet diameter) of unheated free jets at Mach numbers of 0.95, 1.4, and 1.8 were measured using a molecular Rayleigh scattering based technique. The initial thickness of shear layer and its linear growth rate were determined from time-averaged density survey and a modeling process, which utilized the Crocco-Busemann equation to relate density profiles to velocity profiles. The model also corrected for the smearing effect caused by a relatively long probe length in the measured density data. The calculated shear layer thickness was further verified from a limited hot-wire measurement. Density fluctuations spectra, measured using a two-Photomultiplier-tube technique, were used to determine evolution of turbulent fluctuations in various Strouhal frequency bands. For this purpose spectra were obtained from a large number of points inside the flow; and at every axial station spectral data from all radial positions were integrated. The radially-integrated fluctuation data show an exponential growth with downstream distance and an eventual saturation in all Strouhal frequency bands. The initial level of density fluctuations was calculated by extrapolation to nozzle exit.

Intragranular cracking as a critical barrier for high-voltage usage of layer-structured cathode for lithium-ion batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Pengfei; Zheng, Jianming; Gu, Meng

LiNi 1/3Mn 1/3Co 1/3O 2 (NMC333) layered cathode is often fabricated as secondary particles of consisting of densely packed primary particles, which offers advantage of high energy density and alleviation of cathode side reactions/corrosions, but introduces other drawbacks, such as intergranular cracking. Here, we report unexpected observations on the nucleation and growth of intragranular cracks in the commercial NMC333 layered cathode by using advanced S/TEM. We found that the formation of the intragranular cracks is directly associated with high voltage cycling, which is an electrochemically driven and diffusion controlled process. The intragranular cracks were noticed to be characteristically initiated frommore » grain interior, a consequence of dislocation based crack incubation mechanism. This observation is in sharp contrast with the general theoretical models, predicting the initiation of intragranular cracks from grain boundaries or particle surface. As a result, our study indicates that maintain a structural stability is the key step toward high voltage operation of layered cathode materials.« less

Intragranular cracking as a critical barrier for high-voltage usage of layer-structured cathode for lithium-ion batteries

DOE PAGES

Yan, Pengfei; Zheng, Jianming; Gu, Meng; ...

2017-01-16

LiNi 1/3Mn 1/3Co 1/3O 2 (NMC333) layered cathode is often fabricated as secondary particles of consisting of densely packed primary particles, which offers advantage of high energy density and alleviation of cathode side reactions/corrosions, but introduces other drawbacks, such as intergranular cracking. Here, we report unexpected observations on the nucleation and growth of intragranular cracks in the commercial NMC333 layered cathode by using advanced S/TEM. We found that the formation of the intragranular cracks is directly associated with high voltage cycling, which is an electrochemically driven and diffusion controlled process. The intragranular cracks were noticed to be characteristically initiated frommore » grain interior, a consequence of dislocation based crack incubation mechanism. This observation is in sharp contrast with the general theoretical models, predicting the initiation of intragranular cracks from grain boundaries or particle surface. As a result, our study indicates that maintain a structural stability is the key step toward high voltage operation of layered cathode materials.« less

Formation of intermetallics at the interface of explosively welded Ni-Al multilayered composites during annealing

NASA Astrophysics Data System (ADS)

Ogneva, T. S.; Lazurenko, D. V.; Bataev, I. A.; Mali, V. I.; Esikov, M. A.; Bataev, A. A.

2016-04-01

The Ni-Al multilayer composite was fabricated using explosive welding. The zones of mixing of Ni and Al are observed at the composite interfaces after the welding. The composition of these zones is inhomogeneous. Continuous homogeneous intermetallic layers are formed at the interface after heat treatment at 620 °C during 5 h These intermetallic layers consist of NiAl3 and Ni2Al3 phases. The presence of mixed zones significantly accelerates the growth rate of intermetallic phases at the initial stages of heating.

Tunable self-organization of nanocomposite multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, C. Q.; Pei, Y. T.; Shaha, K. P.

In this letter we report the controlled growth and microstructural evolution of self-assembled nanocomposite multilayers that are induced by surface ion-impingement. The nanoscale structures together with chemical composition, especially at the growing front, have been investigated with high-resolution transmission electron microscopy. Concurrent ion impingement of growing films produces an amorphous capping layer 3 nm in thickness where spatially modulated phase separation is initiated. It is shown that the modulation of multilayers as controlled by the self-organization of nanocrystallites below the capping layer, can be tuned through the entire film.

Development of Carbon Nanotube-Based Sensor to Monitor Crack Growth in Cracked Aluminum Structures Underneath Composite Patching

DTIC Science & Technology

2014-06-01

layer of epoxy and ensure crack is filled in. Let sit for at least 1 hour, but no longer than 3 hours. (Do not allow base layer to harden before...10 mmHg and hold for 8 hours. • Once hardened remove excess epoxy and test sample. C. TENSILE TESTING For the purpose of this study, total fracture...hardened remove excess epoxy and test sample. 2. Final Changes Changes were made from this initial sample preparation to the final one shown in the

Interface Energy Alignment of Atomic-Layer-Deposited VOx on Pentacene: an in Situ Photoelectron Spectroscopy Investigation.

PubMed

Zhao, Ran; Gao, Yuanhong; Guo, Zheng; Su, Yantao; Wang, Xinwei

2017-01-18

Ultrathin atomic-layer-deposited (ALD) vanadium oxide (VO x ) interlayer has recently been demonstrated for remarkably reducing the contact resistance in organic electronic devices (Adv. Funct. Mater. 2016, 26, 4456). Herein, we present an in situ photoelectron spectroscopy investigation (including X-ray and ultraviolet photoelectron spectroscopies) of ALD VO x grown on pentacene to understand the role of the ALD VO x interlayer for the improved contact resistance. The in situ photoelectron spectroscopy characterizations allow us to monitor the ALD growth process of VO x and trace the evolutions of the work function, pentacene HOMO level, and VO x defect states during the growth. The initial VO x growth is found to be partially delayed on pentacene in the first ∼20 ALD cycles. The underneath pentacene layer is largely intact after ALD. The ALD VO x is found to contain a high density of defect states starting from 0.67 eV below the Fermi level, and the energy level of these defect states is in excellent alignment with the HOMO level of pentacene, which therefore allows these VO x defect states to provide an efficient hole-injection pathway at the contact interface.

Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes.

PubMed

Gu, Yu; Wang, Wei-Wei; Li, Yi-Juan; Wu, Qi-Hui; Tang, Shuai; Yan, Jia-Wei; Zheng, Ming-Sen; Wu, De-Yin; Fan, Chun-Hai; Hu, Wei-Qiang; Chen, Zhao-Bin; Fang, Yuan; Zhang, Qing-Hong; Dong, Quan-Feng; Mao, Bing-Wei

2018-04-09

Dendrite growth of alkali metal anodes limited their lifetime for charge/discharge cycling. Here, we report near-perfect anodes of lithium, sodium, and potassium metals achieved by electrochemical polishing, which removes microscopic defects and creates ultra-smooth ultra-thin solid-electrolyte interphase layers at metal surfaces for providing a homogeneous environment. Precise characterizations by AFM force probing with corroborative in-depth XPS profile analysis reveal that the ultra-smooth ultra-thin solid-electrolyte interphase can be designed to have alternating inorganic-rich and organic-rich/mixed multi-layered structure, which offers mechanical property of coupled rigidity and elasticity. The polished metal anodes exhibit significantly enhanced cycling stability, specifically the lithium anodes can cycle for over 200 times at a real current density of 2 mA cm -2 with 100% depth of discharge. Our work illustrates that an ultra-smooth ultra-thin solid-electrolyte interphase may be robust enough to suppress dendrite growth and thus serve as an initial layer for further improved protection of alkali metal anodes.

The Effect of Sn Orientation on Intermetallic Compound Growth in Idealized Sn-Cu-Ag Interconnects

NASA Astrophysics Data System (ADS)

Kinney, Chris; Linares, Xioranny; Lee, Kyu-Oh; Morris, J. W.

2013-04-01

The work reported here explores the influence of crystal orientation on the growth of the interfacial intermetallic layer during electromigration in Cu||Sn||Cu solder joints. The samples were thin, planar Sn-Ag-Cu (SAC) solder layers between Cu bars subject to a uniaxial current. Electron backscatter diffraction (EBSD) was used to characterize the microstructure before and after testing. The most useful representation of the EBSD data identifies the Sn grain orientation by the angle between the Sn c-axis and the current direction. The tested samples included single-crystal joints with c-axis nearly parallel to the current ("green" samples) and with c-axis perpendicular to the current ("red" samples). At current density of 104 A/cm2 (steady-state temperature of ~150°C), an intermetallic layer grew at an observable rate in the "green" samples, but not in the "red" ones. A current density of 1.15 × 104 A/cm2 (temperature ~160°C) led to measurable intermetallic growth in both samples. The growth fronts were nearly planar and the growth rates constant (after an initial incubation period); the growth rates in the "green" samples were about 10× those in the "red" samples. The Cu concentrations were constant within the joints, showing that the intermetallic growth is dominated by the electromigration flux. The measured growth rates and literature values for the diffusion of Cu in Sn were used to extract values for the effective charge, z *, that governs the electromigration of Cu. The calculated value of z * is significantly larger for current perpendicular to the c-axis than along it.

Critical island size for Ag thin film growth on ZnO (0 0 0 1 bar)

NASA Astrophysics Data System (ADS)

Lloyd, Adam L.; Smith, Roger; Kenny, Steven D.

2017-02-01

Island growth of Ag on ZnO is investigated with the development of a new technique to approximate critical island sizes. Ag is shown to attach in one of three highly symmetric sites on the ZnO surface or initial monolayers of grown Ag. Due to this, a lattice based adaptive kinetic Monte Carlo (LatAKMC) method is used to investigate initial growth phases. As island formation is commonly reported in the literature, the critical island sizes of Ag islands on a perfect polar ZnO surface and a first monolayer of grown Ag on the ZnO surface are considered. A mean rate approach is used to calculate the average time for an Ag ad-atom to drop off an island and this is then compared to deposition rates on the same island. Results suggest that Ag on ZnO (0 0 0 1 bar) will exhibit Stranski-Krastanov (layer plus island) growth.

Heteroepitaxy of orientation-patterned nonlinear optical materials

NASA Astrophysics Data System (ADS)

Tassev, Vladimir L.; Vangala, Shivashankar R.; Peterson, Rita D.; Snure, Michael

2018-03-01

We report some recent results on thick heteroepitaxial growth of GaP on GaAs substrates and on orientation-patterned (OP) GaAs templates conducted in a hot-wall horizontal quartz reactor for Hydride Vapor Phase Epitaxy. The growths on the plain substrates resulted in up to 500 μm thick GaP with smooth surface morphology (RMS < 1-2 nm) and high crystalline quality (FWHM = 100-150 arcsec), comparable to the quality of the related homoepitaxial growths of GaP on GaP. Up to 300 μm thick OPGaP quasi-phase matching structures with excellent domain fidelity were also heteroepitaxially grown with high reproducibility on OPGaAs templates in support of frequency conversion laser source development for the mid and longwave infrared. We studied the GaAsxP1-x ternary transition layer that forms between the growing film and the substrate. We also undertook steps to determine some important characteristics of heteroepitaxy such as thickness of the pseudomorphous growth and periodicity of the expected misfit dislocations. The formation of these and some other defects and their distribution within the layer thickness was also investigated. Samples were characterized by Nomarski optical microscopy, transmission optical measurements, transmission electron microscopy, scanning electron microscopy, atomic force microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy. The focus was predominantly on the interface and, more precisely, on what influence the pre-growth surface treatment of the substrate has on the initial and the following stages of growth, as well on the mechanisms of the strain relaxation from the lattice and thermal mismatch between layer and substrate. The efforts to accommodate the growing film to the foreign substrate by engineering an intermediate buffer layer were extended to thick growths of GaAsxP1-x ternary with the idea to combine in one material the best of the nonlinear properties of GaP and GaAs that are strictly relevant to the pursued applications.

How Helicobacter pylori urease may affect external pH and influence growth and motility in the mucus environment: evidence from in-vitro studies.

PubMed

Sidebotham, Ramon L; Worku, Mulugeta L; Karim, Q Najma; Dhir, Nirmal K; Baron, J Hugh

2003-04-01

Survival of Helicobacter pylori is dependent upon urease in the cytoplasm and at the bacterial surface. We have sought to clarify how alkaline ammonium salts, released from urea by this enzyme, might alter mucus pH and so affect growth and motility of the bacterium in the gastric mucus environment. Experiments were conducted in vitro to determine how the growth and motility of H. pylori are affected by changes in external pH, and how the bacterium, by hydrolysing urea, alters the pH of the bicarbonate buffer that occurs at the gastric mucosal surface. These data were fitted into experimental models that describe how pH varies within the mucus layer in the acid-secreting stomach. H. pylori was motile between pH 5 and 8, with optimal motility at pH 5. It grew between pH 6 and 8, with optimal growth at pH 6. The bacterium had urease activity between pH 2.7 and 7.4, as evidenced by pH rises in bicarbonate-buffered solutions of urea. Changes in buffer pH were dependent upon initial pH and urea concentration, with the greatest rate of pH change occurring at pH 3. Modelling experiments utilizing these data indicated that (1) in the absence of urease, H. pylori growth and motility in the mucus layer would be restricted severely by low mucus pH in the acid-secreting stomach, and (2) urease will sometimes inhibit H. pylori growth and motility in the mucus layer by elevating the pH of the mucus environment above pH 8. Urease is essential to the growth and motility of H. pylori in the mucus layer in the acid-secreting stomach, but, paradoxically, sometimes it might suppress colonization by raising the mucus pH above 8. This latter effect may protect the bacteria from the adverse consequences of overpopulation.

Initial oxidation of pure and K doped NiTi shape memory alloys

NASA Astrophysics Data System (ADS)

Tollefsen, H.; Raaen, S.

2009-06-01

Initial oxidation of pure and K doped nitinol has been studied by photoelectron spectroscopy. The composition of the TiOx layer that forms on the surface is found to depend on the temperature during oxidation. The oxidation at high temperatures results in enhanced formation of lower oxides, whereas TiO2 predominates for oxidation at lower temperatures, e.g., 70 °C. Submonolayer coverage of K on NiTi enhances the formation of TiO2 on the expense of lower oxides, which is of consequence for formation of a protective oxide layer and biocompatibility. Oxidation in the martensitic phase was found to be independent of temperature for temperatures between -40 and 10 °C, whereas in the austenitic phase the oxide growth is thermally activated.

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C

NASA Astrophysics Data System (ADS)

Higashi, H.; Kudo, K.; Yamamoto, K.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

2018-06-01

We study the electrical properties of pseudo-single-crystalline Ge (PSC-Ge) films grown by a Au-induced layer exchange crystallization method at 250 °C. By inserting the SiNx layer between PSC-Ge and SiO2, we initiatively suppress the influence of the Ge/SiO2 interfacial defective layers, which have been reported in our previous works, on the electrical properties of the PSC-Ge layers. As a result, we can detect the influence of the ionized Au+ donors on the temperature-dependent hole concentration and Hall mobility. To further examine their electrical properties in detail, we also fabricate p-thin-film transistors (TFTs) with the PSC-Ge layer. Although the off-state leakage currents are suppressed by inserting the SiNx layer, the value of on/off ratio remains poor (<102). Even after the post-annealing at 400 °C for the TFTs, the on/off ratio is still poor (˜102) because of the gate-induced drain leakage current although a nominal field effect mobility is enhanced up to ˜25 cm2/V s. Considering these features, we conclude that the Au contaminations into the PSC-Ge layer can affect the electrical properties and device performances despite a low-growth temperature of 250 °C. To achieve further high-performance p-TFTs, we have to suppress the Au contaminations into PSC-Ge during the Au-induced crystallization growth.

High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Yoshikawa, Akira; Nagatomi, Takaharu; Morishita, Tomohiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2017-10-01

We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo-convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick high-temperature layer (1250 °C), and a 3.2-μm-thick medium-temperature layer (1110 °C). The NCC-SS is easily fabricated using a conventional metalorganic vapor phase epitaxy reactor equipped with a showerhead plate. The resultant AlN film has a crack-free and single-step surface with a root-mean-square roughness of 0.5 nm. The full-widths at half-maxima of the X-ray rocking curve were 50/250 arcsec for the (0002)/(10-12) planes, revealing that the NCC surface is critical for achieving such a high-quality film. Hexagonal-pyramid-shaped voids at the AlN/NCC-SS interface and confinement of dislocations within the 150-nm-thick high-temperature layer were confirmed. The NCC surface feature and resultant faceted voids play an important role in the growth of high-crystal-quality AlN films, likely via localized and/or disordered growth of AlN at the initial stage, contributing to the alignment of high-crystal-quality nuclei and dislocations.

Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

PubMed

Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

2016-04-13

Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

Interdependency of Subsurface Carbon Distribution and Graphene–Catalyst Interaction

PubMed Central

2014-01-01

The dynamics of the graphene–catalyst interaction during chemical vapor deposition are investigated using in situ, time- and depth-resolved X-ray photoelectron spectroscopy, and complementary grand canonical Monte Carlo simulations coupled to a tight-binding model. We thereby reveal the interdependency of the distribution of carbon close to the catalyst surface and the strength of the graphene–catalyst interaction. The strong interaction of epitaxial graphene with Ni(111) causes a depletion of dissolved carbon close to the catalyst surface, which prevents additional layer formation leading to a self-limiting graphene growth behavior for low exposure pressures (10–6–10–3 mbar). A further hydrocarbon pressure increase (to ∼10–1 mbar) leads to weakening of the graphene–Ni(111) interaction accompanied by additional graphene layer formation, mediated by an increased concentration of near-surface dissolved carbon. We show that growth of more weakly adhered, rotated graphene on Ni(111) is linked to an initially higher level of near-surface carbon compared to the case of epitaxial graphene growth. The key implications of these results for graphene growth control and their relevance to carbon nanotube growth are highlighted in the context of existing literature. PMID:25188018

Mathematical model for the growth of phases in binary multiphase systems upon isothermic annealing

NASA Astrophysics Data System (ADS)

Molokhina, L. A.; Rogalin, V. E.; Filin, S. A.; Kaplunov, I. A.

2017-09-01

A phenomenological mathematical model of the formation and growth of phases in a binary multiphase system with allowance for factors influencing the process of diffusion in a binary system is presented. It is shown that phases can grow for a certain time at different ratios between diffusion parameters according to a parabolic law that depends on the duration of isothermic annealing. They then slow their growth after successor phases appear at their interface with one component and can completely disappear from a diffusion layer or begin to grow again, but only at a rate slower than during their initial formation. The dependence of the thickness of each phase layer in a multiphase diffusion zone on the duration of isothermic annealing and the ratio between the diffusion parameters in neighboring phases is obtained. It is established that a certain ratio between the phase growth and rates of dissolution with allowance for the coefficients of diffusion in each phase and the periods of incubation can result in the complete disappearance of one phase as early as the onset of the growth of phase nuclei and be interpreted as a process of reaction diffusion.

Auger electron spectroscopy study of initial stages of oxidation in a copper - 19.6-atomic-percent-aluminum alloy

NASA Technical Reports Server (NTRS)

Ferrante, J.

1973-01-01

Auger electron spectroscopy was used to examine the initial stages of oxidation of a polycrystalline copper - 19.6 a/o-aluminum alloy. The growth of the 55-eV aluminum oxide peak and the decay of the 59-, 62-, and 937-eV copper peaks were examined as functions of temperature, exposure, and pressure. Pressures ranged from 1x10 to the minus 7th power to 0.0005 torr of O2. Temperatures ranged from room temperature to 700 C. A completely aluminum oxide surface layer was obtained in all cases. Complete disappearance of the underlying 937-eV copper peak was obtained by heating at 700 C in O2 at 0.0005 torr for 1 hr. Temperature studies indicated that thermally activated diffusion was important to the oxidation studies. The initial stages of oxidation followed a logarithmic growth curve.

Direct Numerical Simulation of Transition in a Swept-Wing Boundary Layer

NASA Technical Reports Server (NTRS)

Duan, Lian; Choudhari, Meelan M.; Li, Fei

2013-01-01

Direct numerical simulation (DNS) is performed to examine laminar to turbulent transition due to high-frequency secondary instability of stationary crossflow vortices in a subsonic swept-wing boundary layer for a realistic natural-laminar-flow airfoil configuration. The secondary instability is introduced via inflow forcing derived from a two-dimensional, partial-differential-equation based eigenvalue computation; and the mode selected for forcing corresponds to the most amplified secondary instability mode which, in this case, derives a majority of its growth from energy production mechanisms associated with the wall-normal shear of the stationary basic state. Both the growth of the secondary instability wave and the resulting onset of laminar-turbulent transition are captured within the DNS computations. The growth of the secondary instability wave in the DNS solution compares well with linear secondary instability theory when the amplitude is small; the linear growth is followed by a region of reduced growth resulting from nonlinear effects before an explosive onset of laminar breakdown to turbulence. The peak fluctuations are concentrated near the boundary layer edge during the initial stage of transition, but rapidly propagates towards the surface during the process of laminar breakdown. Both time-averaged statistics and flow visualization based on the DNS reveal a sawtooth transition pattern that is analogous to previously documented surface flow visualizations of transition due to stationary crossflow instability. The memory of the stationary crossflow vortex is found to persist through the transition zone and well beyond the location of the maximum skin friction.

Preferential growth of short aligned, metallic-rich single-walled carbon nanotubes from perpendicular layered double hydroxide film.

PubMed

Zhao, Meng-Qiang; Tian, Gui-Li; Zhang, Qiang; Huang, Jia-Qi; Nie, Jing-Qi; Wei, Fei

2012-04-07

Direct bulk growth of single-walled carbon nanotubes (SWCNTs) with required properties, such as diameter, length, and chirality, is the first step to realize their advanced applications in electrical and optical devices, transparent conductive films, and high-performance field-effect transistors. Preferential growth of short aligned, metallic-rich SWCNTs is a great challenge to the carbon nanotube community. We report the bulk preferential growth of short aligned SWCNTs from perpendicular Mo-containing FeMgAl layered double hydroxide (LDH) film by a facile thermal chemical vapor deposition with CH(4) as carbon source. The growth of the short aligned SWCNTs showed a decreased growth velocity with an initial value of 1.9 nm s(-1). Such a low growth velocity made it possible to get aligned SWCNTs shorter than 1 μm with a growth duration less than 15 min. Raman spectra with different excitation wavelengths indicated that the as-grown short aligned SWCNTs showed high selectivity of metallic SWCNTs. Various kinds of materials, such as mica, quartz, Cu foil, and carbon fiber, can serve as the substrates for the growth of perpendicular FeMoMgAl LDH films and also the growth of the short aligned SWCNTs subsequently. These findings highlight the easy route for bulk preferential growth of aligned metallic-rich SWCNTs with well defined length for further bulk characterization and applications. This journal is © The Royal Society of Chemistry 2012

Streaming sausage, kink and tearing instabilities in a current sheet with applications to the earth's magnetotail

NASA Technical Reports Server (NTRS)

Lee, L. C.; Wang, S.; Wei, C. Q.; Tsurutani, B. T.

1988-01-01

This paper investigates the growth rates and eigenmode structures of the streaming sausage, kink, and tearing instabilities in a current sheet with a super-Alfvenic flow. The growth rates and eigenmode structures are first considered in the ideal incompressible limit by using a four-layer model, as well as a more realistic case in which all plasma parameters and the magnetic field vary continuously along the direction perpendicular to the magnetic field and plasma flow. An initial-value method is applied to obtain the growth rate and eigenmode profiles of the fastest growing mode, which is either the sausage mode or kink mode. It is shown that, in the earth's magnetotail, where super-Alfvenic plasma flows are observed in the plasma sheet and the ratio between the plasma and magnetic pressures far away from the current layer is about 0.1-0.3 in the lobes, the streaming sausage and streaming tearing instabilities, but not kink modes, are likely to occur.

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.; Liang, B. W.; Wang, S. Y.; Yang, L.; Mars, D. E.

1994-03-01

We report the growth of InGaAs/GaAs vertical cavity surface emitting lasers (VCSELs) with an emission wavelength at 0.98 μm by gas-source molecular beam epitaxy (GSMBE). The surface emitting laser diodes are composed of a 15-pair p + GaAs/AlAs graded mirror with a 3-quantum well In 0.2Ga 0.8As active region and a 16.5-pair n + GaAs/AlAs grade mirror on an n + GaAs substrate. We use a simple interferometric technique for in-situ monitoring and feedback control of layer thickness to obtain a highly reproducible Bragg reflector. This technique uses an optical pyrometer to measure apparent temperature oscillations of the growing epi-layer surface. These measurements can be performed with continuous substrate rotation and without any growth interruption. The growing layer thickness can then be related to the apparent temperature oscillation spectrum. When the layer reaches the desired thickness, the growth of the subsequent layer is then initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the center of the mirror reflectivity and the Fabry-Pérot resonance at the desired wavelength can be reproducibly obtained. The reproducibility of the center wavelength and FWHM of the reflectivity stop-band with a variation of ≤ 0.2% was achieved in the AlAs/GaAs mirror stacks grown using this technique. The VCSEL structures with a variation of the Fabry-Pérot wavelength of ≤ 0.4% have been grown. Bottom-emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 6 mA are measured at room temperature for 10 and 25 μm diameter lasers, respectively. Output powers higher than 15 mW are obtained from these devices. These devices have an external quantum efficiency higher than 40%.

Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer.

PubMed

Oh, H J; Park, S J; Lim, J Y; Cho, N K; Song, J D; Lee, W; Lee, Y J; Myoung, J M; Choi, W J

2014-04-01

Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

Fabrication of malachite with a hierarchical sphere-like architecture.

PubMed

Xu, Jiasheng; Xue, Dongfeng

2005-09-15

Malachite (Cu2(OH)2CO3) with a hierarchical sphere-like architecture has been successfully synthesized via a simple and mild hydrothermal route in the absence of any external inorganic additives or organic structure-directing templates. Powder X-ray diffraction, scanning electron microscopy, and Fourier transmission infrared spectrometry are used to characterize various properties of the obtained malachite samples. The hierarchical malachite particles are uniform spheres with a diameter of 10-20 microm, which are comprised of numerous two-dimensional microplatelets paralleling the sphere surface. The initial concentration of reagents, the hydrothermal reaction time, and temperature are important factors which dominantly affect the evolution of crystal morphologies. The growth of the hierarchical architecture is believed to be a layer-by-layer growth process. Further, copper oxide with the similar morphology can be easily obtained from the as-prepared malachite.

MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates

NASA Astrophysics Data System (ADS)

Li, Ding; Hoffmann, Veit; Richter, Eberhard; Tessaro, Thomas; Galazka, Zbigniew; Weyers, Markus; Tränkle, Günther

2017-11-01

We report that a H2-free atmosphere is essential for the initial stage of metalorganic vapour phase epitaxy (MOVPE) growth of GaN on β-Ga2O3 to prevent the surface from damage. A simple growth method is proposed that can easily transfer established GaN growth recipes from sapphire to β-Ga2O3 with both (-2 0 1) and (1 0 0) orientations. This method features a thin AlN nucleation layer grown below 900 °C in N2 atmosphere to protect the surface of β-Ga2O3 from deterioration during further growth under the H2 atmosphere. Based on this, we demonstrate working violet vertical light emitting diodes (VLEDs) on n-conductive β-Ga2O3 substrates.

Low temperature growth and electrical characterization of insulators for GaAs MISFETS

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Ghandhi, S. K.

1981-01-01

Progress in the low temperature growth of oxides and layers on GaAs and the detailed electrical characterization of these oxides is reported. A plasma anodization system was designed, assembled, and put into operation. A measurement system was assembled for determining capacitance and conductance as a function of gate voltage for frequencies in the range from 1 Hz to 1 MHz. Initial measurements were carried out in Si-SiO2 capacitors in order to test the system and in GaAs MIS capacitors abricated using liquid anodization.

III-V compound semiconductor growth on silicon via germanium buffer and surface passivation for CMOS technology

NASA Astrophysics Data System (ADS)

Choi, Donghun

Integration of III-V compound semiconductors on silicon substrates has recently received much attention for the development of optoelectronic and high speed electronic devices. However, it is well known that there are some key challenges for the realization of III-V device fabrication on Si substrates: (i) the large lattice mismatch (in case of GaAs: 4.1%), and (ii) the formation of antiphase domain (APD) due to the polar compound semiconductor growth on non-polar elemental structure. Besides these growth issues, the lack of a useful surface passivation technology for compound semiconductors has precluded development of metal-oxide-semiconductor (MOS) devices and causes high surface recombination parasitics in scaled devices. This work demonstrates the growth of high quality III-V materials on Si via an intermediate Ge buffer layer and some surface passivation methods to reduce interface defect density for the fabrication of MOS devices. The initial goal was to achieve both low threading dislocation density (TDD) and low surface roughness on Ge-on-Si heterostructure growth. This was achieved by repeating a deposition-annealing cycle consisting of low temperature deposition + high temperature-high rate deposition + high temperature hydrogen annealing, using reduced-pressure chemical-vapor deposition (CVD). We then grew III-V materials on the Ge/Si virtual substrates using molecular-beam epitaxy (MBE). The relationship between initial Ge surface configuration and antiphase boundary formation was investigated using surface reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) image analysis. In addition, some MBE growth techniques, such as migration enhanced epitaxy (MEE) and low temperature GaAs growth, were adopted to improve surface roughness and solve the Ge self-doping problem. Finally, an Al2O3 gate oxide layer was deposited using atomic-layer-deposition (ALD) system after HCl native oxide etching and ALD in-situ pre-annealing at 400 °C. A 100 nm thick aluminum layer was deposited to form the gate contact for a MOS device fabrication. C-V measurement results show very small frequency dispersion and 200-300 mV hysteresis, comparable to our best results for InGaAs/GaAs MOS structures on GaAs substrate. Most notably, the quasi-static C-V curve demonstrates clear inversion layer formation. I-V curves show a reasonable leakage current level. The inferred midgap interface state density, Dit, of 2.4 x 1012 eV-1cm-2 was calculated by combined high-low frequency capacitance method. In addition, we investigated the interface properties of amorphous LaAlO 3/GaAs MOS capacitors fabricated on GaAs substrate. The surface was protected during sample transfer between III-V and oxide molecular beam deposition (MBD) chambers by a thick arsenic-capping layer. An annealing method, a low temperature-short time RTA followed by a high temperature RTA, was developed, yielding extremely small hysteresis (˜ 30 mV), frequency dispersion (˜ 60 mV), and interface trap density (mid 1010 eV-1cm -2). We used capacitance-voltage (C-V) and current-voltage (I-V) measurements for electrical characterization of MOS devices, tapping-mode AFM for surface morphology analysis, X-ray photoelectron spectroscopy (XPS) for chemical elements analysis of interface, cross section transmission-electron microscopy (TEM), X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), and photoluminescence (PL) measurement for film quality characterization. This successful growth and appropriate surface treatments of III-V materials provides a first step for the fabrication of III-V optical and electrical devices on the same Si-based electronic circuits.

A frost formation model and its validation under various experimental conditions

NASA Technical Reports Server (NTRS)

Dietenberger, M. A.

1982-01-01

A numerical model that was used to calculate the frost properties for all regimes of frost growth is described. In the first regime of frost growth, the initial frost density and thickness was modeled from the theories of crystal growth. The 'frost point' temperature was modeled as a linear interpolation between the dew point temperature and the fog point temperature, based upon the nucleating capability of the particular condensing surfaces. For a second regime of frost growth, the diffusion model was adopted with the following enhancements: the generalized correlation of the water frost thermal conductivity was applied to practically all water frost layers being careful to ensure that the calculated heat and mass transfer coefficients agreed with experimental measurements of the same coefficients.

Nanoscale oxidation and complex oxide growth on single crystal iron surfaces and external electric field effects.

PubMed

Jeon, Byoungseon; Van Overmeere, Quentin; van Duin, Adri C T; Ramanathan, Shriram

2013-02-14

Oxidation of iron surfaces and oxide growth mechanisms have been studied using reactive molecular dynamics. Oxide growth kinetics on Fe(100), (110), and (111) surface orientations has been investigated at various temperatures and/or an external electric field. The oxide growth kinetics decreases in the order of (110), (111), and (100) surfaces at 300 K over 1 ns timescale while higher temperature increases the oxidation rate. The oxidation rate shows a transition after an initial high rate, implying that the oxide formation mechanism evolves, with iron cation re-ordering. In early stages of surface oxide growth, oxygen transport through iron interstitial sites is dominant, yielding non-stoichiometric wüstite characteristics. The dominant oxygen inward transport decreases as the oxide thickens, evolving into more stoichiometric oxide phases such as wüstite or hematite. This also suggests that cation outward transport increases correspondingly. In addition to oxidation kinetics simulations, formed oxide layers have been relaxed in the range of 600-1500 K to investigate diffusion characteristics, fitting these results into an Arrhenius relation. The activation energy of oxygen diffusion in oxide layers formed on Fe(100), (110), and (111) surfaces was estimated to be 0.32, 0.26, and 0.28 eV, respectively. Comparison between our modeling results and literature data is then discussed. An external electric field (10 MV cm(-1)) facilitates initial oxidation kinetics by promoting oxygen transport through iron lattice interstitial sites, but reaches self-limiting thickness, showing that similar oxide formation stages are maintained when cation transport increases. The effect of the external electric field on iron oxide structure, composition, and oxide activation energy is found to be minimal, whereas cation outward migration is slightly promoted.

Surface topography and electrical properties in Sr2FeMoO6 films studied at cryogenic temperatures

NASA Astrophysics Data System (ADS)

Angervo, I.; Saloaro, M.; Mäkelä, J.; Lehtiö, J.-P.; Huhtinen, H.; Paturi, P.

2018-03-01

Pulsed laser deposited Sr2FeMoO6 thin films were investigated for the first time with scanning tunneling microscopy and spectroscopy. The results confirm atomic scale layer growth, with step-terrace structure corresponding to a single lattice cell scale. The spectroscopy research reveals a distribution of local electrical properties linked to structural deformation in the initial thin film layers at the film substrate interface. Significant hole structure giving rise to electrically distinctive regions in thinner film also seems to set a thickness limit for the thinnest films to be used in applications.

Onset and localisation of convection during transient growth of mushy sea ice

NASA Astrophysics Data System (ADS)

Wells, Andrew; Hitchen, Joe

2017-11-01

More than 20 million square kilometres of the polar oceans freeze over each year to form sea ice. Sea ice is a mushy layer: a reactive, porous, multiphase material consisting of ice crystals bathed in liquid brine. Atmospheric cooling generates a density gradient in the interstitial brine, which can drive convection and rejection of brine from the sea ice to force ocean circulation and mixing. We use linear stability analysis and nonlinear numerical simulations to consider the convection in a transiently growing mushy layer. An initial salt water layer is cooled from above via a linearised thermal exchange with the atmosphere, and generates a growing mushy layer with the porosity varying in space and time. We determine how the critical porous-medium Rayleigh number for the onset of convection varies with the surface cooling rate, and the initial temperature and salinity of the solidifying salt water. Differences in the cooling conditions modify the structure of the ice and the resulting convection cells. Weak cooling leads to full-depth convection through ice with slowly varying porosity, whilst stronger cooling leads to localised convection confined to a highly permeable basal layer. These results provide insight into the onset of convective brine drainage from growing sea ice.

Receptivity and Bypass Dynamics

NASA Technical Reports Server (NTRS)

Lasseigne, D. G.; Criminale, W. O.; Joslin, R. D.; Jackson, T. L.

1999-01-01

Problems concerning laminar-turbulent transition are addressed by solving a series of initial value problems. Solutions to the temporal, initial-value problem .with an inhomogeneous forcing term imposed upon the flow are sought. It is shown that: (1) A transient disturbance lying located outside of the boundary layer can lead to the growth of an unstable Tollmein-Schlicting wave; (2) A resonance with the continuous spectrum may provide a mechanism for bypass transition; and (3) The continuum modes of a disturbance feed directly into the Tollmein-Schlicting wave downstream through non-parallel effects.

Computational studies of an impulsively started viscous flow

NASA Technical Reports Server (NTRS)

Davis, Sanford S.

1988-01-01

Progress in validating incompressible Navier-Stokes codes is described using a predictor/corrector scheme. The flow field under study is the impulsive start of a circular cylinder and the unsteady evolution of the separation bubble. In the current code, a uniform asymptotic expansion is used as an initial condition in order to correctly capture the initial growth of the vortex sheet. Volocity fields at selected instants of time are decomposed into vectorial representations of Navier-Stokes equations which are then used to analyze dominant contributions in the boundary-layer region.

Growth characteristics of (100)HgCdTe layers in low-temperature MOVPE with ditertiarybutyltelluride

NASA Astrophysics Data System (ADS)

Yasuda, K.; Hatano, H.; Ferid, T.; Minamide, M.; Maejima, T.; Kawamoto, K.

1996-09-01

Low-temperature growth of (100)HgCdTe (MCT) layers in MOVPE has been studied using ditertiarybutyltelluride (DtBTe), dimethylcadmium (DMCd), and elementary mercury as precursors. MCT layers were grown at 275°C on (100)GaAs substrates. Growths were carried out in a vertical growth cell which has a narrow spacing between the substrate and cell ceiling. Using the growth cell, the Cd-composition ( x) of MCT layers was controlled over a wide range from 0 to 0.98 by the DMCd flow. The growth rate of the MCT layers was constant at 5 μm h -1 for the increased DMCd flow. Preferential Cd-incorporation into MCT layers and an increase of the growth rate were observed in the presence of mercury vapor. The growth characteristics were considered to be due to the alkyl-exchange reaction between DMCd and mercury. The electrical properties and crystallinity of grown layers were also evaluated, which showed that layers with high quality can be grown at 275°C.

Molecular beam studies of the growth and kinetics of self-assembled monolayers

NASA Astrophysics Data System (ADS)

Schwartz, Peter Vincent

Low energy helium diffraction, a quantitative structural characterization tool, has been used to measure the growth kinetics of self-assembled monolayers (SAMs). Special attention was given to the growth of decanethiol monolayers deposited from a molecular beam onto the (111) face of gold single crystals especially at the initial stages of growth. The influence of changing impingement rate, substrate temperature, and annealing treatments was investigated. We also studied the structure and dynamics of physisorbed adlayers on top of the monolayers and structural variations in monolayers caused by changes in chemical composition such as the addition of phenyl groups, and hydroxyl groups. Experimental work involved renovations to the existing diffractometer. The apparatus was improved with respect to its signal to noise ratio; efficiency in sample preparation and data collection; and the reproducibility of obtaining clean crystal surfaces. The renovations greatly extended the range of experiments of which the diffraction machine is capable. The growth of n-decanethiol SAMs by gas deposition was identified as a multi-stage process where the initial "lying down" layer grows on the bare gold surface with a near unity sticking coefficient, while the subsequent, "standing-up" phase grows with a sticking coefficient of about 10sp{-3}. The ordering and chemisorption of a single "lying down" layer of decanethiol was investigated by annealing a single layer physisorbed on a 130 K Au(111) surface to incrementally higher temperatures. The molecules first align themselves with the underlying gold substrate, then orient themselves in the "head to head" two molecule unit mesh, then chemisorb at still higher temperatures. Overlayers of long chain molecules grown on top of monolayers on Au(111) are found to be more ordered than the underlying monolayers themselves. The energy of adsorption to the organic surface is found to be very close to that of the bulk value, even for a gold-adlayer separation distance of about 4 A. Debye-Waller experiments were done to measure the stiffness of monolayers of different chain lengths, coverages and functional groups as well as overlayers.

Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

PubMed

Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

2015-06-01

Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

Analytical framework for modeling of long-range transport of fungal plant epidemics

NASA Astrophysics Data System (ADS)

Kogan, Oleg; O'Keeffe, Kevin; Schneider, David; Myers, Christopher; Analytical FrameworksInfectious Disease Dynamics Team

2015-03-01

A new framework for the study of long-range transport of fungal plant epidemics is proposed. The null nonlinear model includes advective transport through the free atmosphere, spore production on the ground, and transfer of spores between the ground and the advective atmospheric layer. The competition between the growth wave on the ground and the effect of the wind is most strongly reflected in upwind fronts, which can propagate into the wind for exponential initial conditions. If the rate of spore transfer into the advective layer is below critical, this happens for initital conditions with arbitrary steepness. Upwind fronts from localized initial conditions will propagate in the direction of the wind above this critical parameter, and will not propagate below it. On the other hand, the speed of the downwind front does not have a strong dependence on the rate of spore transfer between the advective layer and the ground. Thus, even vanishingly small, but finite transfer rates result in a substantial epidemic wave in the direction of the wind. We also consider the effect of an additional, random-walk like mechanism of transport through the near-ground atmospheric boundary layer, and attempt to understand which route dominates the transport over long distances.

Uniform large-area growth of nanotemplated high-quality monolayer MoS2

NASA Astrophysics Data System (ADS)

Young, Justin R.; Chilcote, Michael; Barone, Matthew; Xu, Jinsong; Katoch, Jyoti; Luo, Yunqiu Kelly; Mueller, Sara; Asel, Thaddeus J.; Fullerton-Shirey, Susan K.; Kawakami, Roland; Gupta, Jay A.; Brillson, Leonard J.; Johnston-Halperin, Ezekiel

2017-06-01

Over the past decade, it has become apparent that the extreme sensitivity of 2D crystals to surface interactions presents a unique opportunity to tune material properties through surface functionalization and the mechanical assembly of 2D heterostructures. However, this opportunity carries with it a concurrent challenge: an enhanced sensitivity to surface contamination introduced by standard patterning techniques that is exacerbated by the difficulty in cleaning these atomically thin materials. Here, we report a templated MoS2 growth technique wherein Mo is deposited onto atomically stepped sapphire substrates through a SiN stencil with feature sizes down to 100 nm and subsequently sulfurized at high temperature. These films have a quality comparable to the best MoS2 prepared by other methodologies, and the thickness of the resulting MoS2 patterns can be tuned layer-by-layer by controlling the initial Mo deposition. The quality and thickness of the films are confirmed by scanning electron, scanning tunneling, and atomic force microscopies; Raman, photoluminescence, and x-ray photoelectron spectroscopies; and electron transport measurements. This approach critically enables the creation of patterned, single-layer MoS2 films with pristine surfaces suitable for subsequent modification via functionalization and mechanical stacking. Further, we anticipate that this growth technique should be broadly applicable within the family of transition metal dichalcogenides.

Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr

2009-07-01

With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs)more » are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined using optical reflectance and the nucleation density was determined using atomic force microscopy (AFM) and Nomarski microscopy. Dislocation density was measured using X-ray diffraction and AFM after coating the surface with silicon nitride to delineate all dislocation types. The program milestone of producing GaN films with dislocation densities of 1 x 10{sup 8} cm{sup -2} was met by silicon nitride treatment of annealed sapphire followed by the multiple deposition of a low density of GaN nuclei followed by high temperature GaN growth. Details of this growth process and the underlying science are presented in this final report along with problems encountered in this research and recommendations for future work.« less

Facile Synthesis of Thick Films of Poly(methyl methacrylate), Poly(styrene), and Poly(vinyl pyridine) from Au Surfaces

PubMed Central

Saha, Sampa

2011-01-01

Atom transfer radical polymerization (ATRP) is commonly used to grow polymer brushes from Au surfaces, but the resulting film thicknesses are usually significantly less than with ATRP from SiO2 substrates. On Au, growth of poly(methyl methacrylate) (PMMA) blocks from poly(tert-butyl acrylate) brushes occurs more rapidly than growth of PMMA from initiator monolayers, suggesting that the disparity between growth rates from Au and SiO2 stems from the Au surface. Radical quenching by electron transfer from Au is probably not the termination mechanism because polymerization from thin, cross-linked initiators gives film thicknesses that are essentially the same as the thicknesses of films grown from SiO2 under the same polymerization conditions. However, this result is consistent with termination through desorption of thiols from non-cross-linked films, and reaction of these thiols with growing polymer chains. The enhanced stability of cross-linked initiators allows ATRP at temperatures up to ~100 °C and enables the growth of thick films of PMMA (350 nm), polystyrene (120 nm) and poly(vinyl pyridine) (200 nm) from Au surfaces in 1 hour. At temperatures >100 °C, the polymer brush layers delaminate as large area films. PMID:21728374

Controlled Synthesis of Pd/Pt Core Shell Nanoparticles Using Area-selective Atomic Layer Deposition

PubMed Central

Cao, Kun; Zhu, Qianqian; Shan, Bin; Chen, Rong

2015-01-01

We report an atomic scale controllable synthesis of Pd/Pt core shell nanoparticles (NPs) via area-selective atomic layer deposition (ALD) on a modified surface. The method involves utilizing octadecyltrichlorosilane (ODTS) self-assembled monolayers (SAMs) to modify the surface. Take the usage of pinholes on SAMs as active sites for the initial core nucleation, and subsequent selective deposition of the second metal as the shell layer. Since new nucleation sites can be effectively blocked by surface ODTS SAMs in the second deposition stage, we demonstrate the successful growth of Pd/Pt and Pt/Pd NPs with uniform core shell structures and narrow size distribution. The size, shell thickness and composition of the NPs can be controlled precisely by varying the ALD cycles. Such core shell structures can be realized by using regular ALD recipes without special adjustment. This SAMs assisted area-selective ALD method of core shell structure fabrication greatly expands the applicability of ALD in fabricating novel structures and can be readily applied to the growth of NPs with other compositions. PMID:25683469

Stalactite growth as a free-boundary problem: a geometric law and its platonic ideal.

PubMed

Short, Martin B; Baygents, James C; Beck, J Warren; Stone, David A; Toomey, Rickard S; Goldstein, Raymond E

2005-01-14

The chemical mechanisms underlying the growth of cave formations such as stalactites are well known, yet no theory has yet been proposed which successfully accounts for the dynamic evolution of their shapes. Here we consider the interplay of thin-film fluid dynamics, calcium carbonate chemistry, and CO2 transport in the cave to show that stalactites evolve according to a novel local geometric growth law which exhibits extreme amplification at the tip as a consequence of the locally-varying fluid layer thickness. Studies of this model show that a broad class of initial conditions is attracted to an ideal shape which is strikingly close to a statistical average of natural stalactites.

Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Schaefer, Michael; Schlaf, Rudy

2015-08-01

Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru0) and its oxide (RuO2) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru0 and RuO2 films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO2 and 0.04 Å/cycle for Ru.0 An interface dipole of up to -0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO2/OH compound whose surface is saturated with hydroxyl groups.

Real time analysis of self-assembled InAs/GaAs quantum dot growth by probing reflection high-energy electron diffraction chevron image

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kudo, Takuya; Inoue, Tomoya; Kita, Takashi

2008-10-01

Self-assembling process of InAs/GaAs quantum dots has been investigated by analyzing reflection high-energy electron diffraction chevron images reflecting the crystal facet structure surrounding the island. The chevron image shows dramatic changes during the island formation. From the temporal evolution of the chevron tail structure, the self-assembling process has been found to consist of four steps. The initial islands do not show distinct facet structures. Then, the island surface is covered by high-index facets, and this is followed by the formation of stable low-index facets. Finally, the flow of In atoms from the islands occurs, which contributes to flatten the wettingmore » layer. Furthermore, we have investigated the island shape evolution during the GaAs capping layer growth by using the same real-time analysis technique.« less

Correlation between nano-scale microstructural behavior and the performance of ZnO thin-film transistors.

PubMed

Ahn, Cheol Hyoun; Lee, Ju Ho; Lee, Jeong Yong; Cho, Hyung Koun

2014-12-01

Binary ZnO active layers possessing a polycrystalline structure were deposited with various argon/oxygen flow ratios at 250 degrees C via sputtering. Then ZnO thin-film-transistors (TFTs) were fabricated without additional thermal treatments. As the oxygen content increased during the deposition, the preferred orientation along the (0002) was weakened and the rotation of the grains increased, and furthermore, less conducting films were observed. On the other hand, the reduced oxygen flow rate induced the formation of amorphous-like transition layers during the initial growth due to a high growth rate and high energetic bombardment of the adatoms. As a result, the amorphous phases at the gate dielectric/channel interface were responsible for the formation of a hump shape in the subthreshold region of the TFT transfer curve. In addition, the relationship between the crystal properties and the shift in the threshold voltage was experimentally confirmed by a hysteresis test.

Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yunin, P. A., E-mail: yunin@ipmras.ru; Drozdov, Yu. N.; Drozdov, M. N.

2015-11-15

A method for the in situ passivation of GaN-based structures with silicon nitride in the growth chamber of a metal organic vapor phase epitaxy (MOVPE) reactor is described. The structural and electrical properties of the obtained layers are investigated. The in situ and ex situ passivation of transistor structures with silicon nitride in an electron-beam-evaporation device are compared. It is shown that ex situ passivation changes neither the initial carrier concentration nor the mobility. In situ passivation makes it possible to protect the structure surface against uncontrollable degradation upon the finishing of growth and extraction to atmosphere. In the inmore » situ passivated structure, the carrier concentration increases and the mobility decreases. This effect should be taken into account when manufacturing passivated GaN-based transistor structures.« less

Cooling rates and crystallization dynamics of shallow level pegmatite-aplite dikes, San Diego County, California

USGS Publications Warehouse

Webber, Karen L.; Simmons, William B.; Falster, Alexander U.; Foord, Eugene E.

1999-01-01

Pegmatites of the Pala and Mesa Grande Pegmatite Districts, San Diego County, California are typically thin, sheet-like composite pegmatite-aplite dikes. Aplitic portions of many dikes display pronounced mineralogical layering referred to as "line rock," characterized by fine-grained, garnet-rich bands alternating with albite- and quartz-rich bands. Thermal modeling was performed for four dikes in San Diego County including the 1 m thick Himalaya dike, the 2 m thick Mission dike, the 8 m thick George Ashley dike, and the 25 m thick Stewart dike. Calculations were based on conductive cooling equations accounting for latent heat of crystallization, a melt emplacement temperature of 650 °C into 150 °C fractured, gabbroic country rock at a depth of 5 km, and an estimated 3 wt% initial H2O content in the melt. Cooling to -5 cm/s. Crystal size distribution (CSD) studies of garnet from layered aplites suggest growth rates of about 10-6 cm/s. These results indicate that the dikes cooled and crystallized rapidly, with variable nucleation rates but high overall crystal-growth rates. Initial high nucleation rates coincident with emplacement and strong undercooling can account for the millimeter-size aplite grains. Lower nucleation rates coupled with high growth rates can explain the decimeter-size minerals in the hanging walls, cores, and miarolitic cavities of the pegmatites. The presence of tourmaline and/or lepidolite throughout these dikes suggests that although the melts were initially H2O-undersaturated, high melt concentrations of incompatible (or fluxing) components such as B, F, and Li (±H2O), aided in the development of large pegmatitic crystals that grew rapidly in the short times suggested by the conductive cooling models.

Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO{sub 2} using “water-free” metal-halide/metal alkoxide reactants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atanasov, Sarah E.; Kalanyan, Berç; Parsons, Gregory N., E-mail: gnp@ncsu.edu

2016-01-15

Titanium dioxide atomic layer deposition (ALD) is shown to proceed selectively on oxidized surfaces with minimal deposition on hydrogen-terminated silicon using titanium tetrachloride (TiCl{sub 4}) and titanium tetra-isopropoxide [Ti(OCH(CH{sub 3}){sub 2}){sub 4}, TTIP] precursors. Ex situ x-ray photoelectron spectroscopy shows a more rapid ALD nucleation rate on both Si–OH and Si–H surfaces when water is the oxygen source. Eliminating water delays the oxidation of the hydrogen-terminated silicon, thereby impeding TiO{sub 2} film growth. For deposition at 170 °C, the authors achieve ∼2 nm of TiO{sub 2} on SiO{sub 2} before substantial growth takes place on Si–H. On both Si–H and Si–OH, themore » surface reactions proceed during the first few TiCl{sub 4}/TTIP ALD exposure steps where the resulting products act to impede subsequent growth, especially on Si–H surfaces. Insight from this work helps expand understanding of “inherent” substrate selective ALD, where native differences in substrate surface reaction chemistry are used to promote desired selective-area growth.« less

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

NASA Astrophysics Data System (ADS)

Wang, Z. M.; Holmes, K.; Mazur, Yu. I.; Salamo, G. J.

2004-03-01

Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices.

Influence of initial sulfur content in precursor solution for the growth of molybdenum disulfide

NASA Astrophysics Data System (ADS)

Tan, A. L.; Ng, S. S.; Abu Hassan, H.

2018-04-01

This work investigated the influence of initial sulfur content in the precursor solution for the growth of molybdenum disulfide (MoS2) films by thermal vapour sulfurization (TVS) with sol-gel spin coating as pre-deposition technique. The early introduction of sulfur shows the presence of grains are uniformly distributed and homogeneous on the surface of the film. MoS2 (002) planes are detected for both films with and without initial sulfur conditions, however, the presence of initial sulfur contents gives slightly higher intensity of diffraction peak. Two phonon modes for MoS2, namely the E2g 1 (in-plane) and the A1g (out-of plane), are well detected from which the frequency difference of Raman peaks between E2g 1 and A1g suggest the grown MoS2 consisted of multi-layers. There is a slight shift of E2g 1 which is caused by the carbon impurities but no shift for A1g. Besides, MoS2 film with the presence of initial sulfur content shows better crystal as indicated by its narrower Raman peaks linewidth. Two broad absorption peaks of MoS2 are detected at 614nm and 665nm. Hence, the early introduction of sulfur content in prepared precursor solution is one way of optimizing the growth of MoS2 films.

Inhomogeneous growth of fluctuations of concentration of inertial particles in channel turbulence

NASA Astrophysics Data System (ADS)

Fouxon, Itzhak; Schmidt, Lukas; Ditlevsen, Peter; van Reeuwijk, Maarten; Holzner, Markus

2018-06-01

We study the growth of concentration fluctuations of weakly inertial particles in the turbulent channel flow starting with a smooth initial distribution. The steady-state concentration is singular and multifractal so the growth describes the increasingly rugged structure of the distribution. We demonstrate that inhomogeneity influences the growth of concentration fluctuations profoundly. For homogeneous turbulence the growth is exponential and is fully determined by Kolmogorov scale eddies.We derive lognormality of the statistics in this case. The growth exponents of the moments are proportional to the sum of Lyapunov exponents, which is quadratic in the small inertia of the particles. In contrast, for inhomogeneous turbulence the growth is linear in inertia. It involves correlations of inertial range and viscous scale eddies that turn the growth into a stretched exponential law with exponent three halves. We demonstrate using direct numerical simulations that the resulting growth rate can differ by orders of magnitude over channel height. This strong variation might have relevance in the planetary boundary layer.

Effect of ultra-thin liner materials on copper nucleation/wetting and copper grain growth

NASA Astrophysics Data System (ADS)

Mueller, Justin E.

One of the key challenges facing future integrated circuit copper (Cu) interconnect manufacturing is to achieve uniform coverage of PVD Cu seed layer at minimum thickness on a liner and barrier. We have therefore characterized the nucleation and wetting of PVD Cu on various liner surfaces by monitoring in-situ the film's electrical conductance during the initial stages of deposition (0 to 25 nm). Our results showed that the Cu wetting is sensitive to the Cu/liner interfacial properties, while the nucleation depends on the liner microstructure. It was found that a ruthenium (Ru) liner has a good Cu wetting characteristic and allows at the onset nearly layer by layer Cu growth. Because of good wetting, Cu growth is not significantly affected by Ru liner grain size. Tantalum (Ta), however, exhibits poor Cu wetting, which results in an initial stage of three dimensional island growth of Cu. In this case, Cu island coalescing occurs sooner, at a smaller Cu film thickness, when the nucleation site density is increased with a smaller grain size Ta liner. To optimize the seed layer's conductance and step coverage, a liner with combined properties of Ta (for adhesion and barrier formation) and Ru (for wetting and grain growth) may be desired. A hybrid magnetron target has been developed for depositing TaRu liner films at various compositions. The microstructure of the compound liners and their effects on the overgrown Cu seed layer over a wide range of TaRu composition is presented. It was found that below 80% Ru concentration, TaRu films are amorphous. An amorphous liner results in poor Cu nucleation as compared with a crystalline Ta or Ru liner. A comparison of the microstructure of thin Cu films deposited on bcc alpha-Ta and tetragonal beta-Ta surfaces has been carried out. Cu resistivity is lower by 10-15%, accompanied by larger Cu grain size, in as-deposited Cu films of various thickness' (30-120 nm) on beta-Ta as compared to those deposited on alpha-Ta. This is due to the presence of an epitaxial relationship between Cu (111) and beta-Ta (002) planes. After annealing, the difference was only seen in films thinner than 60 nm. Results were confirmed when Cu film resistance was measured in-situ during deposition on each phase of Ta liner. Serpentine interconnect line structures of various line widths and aspect ratios were fabricated using either alpha- or beta-Ta liners, and subjected to a similar heat treatment. Results showed a similar ˜10% lower resistivity in the thinnest interconnects (˜40 nm) when a beta-Ta liner was used.

Shock front distortion and Richtmyer-Meshkov-type growth caused by a small preshock nonuniformity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velikovich, A. L.; Wouchuk, J. G.; Huete Ruiz de Lira, C.

The response of a shock front to small preshock nonuniformities of density, pressure, and velocity is studied theoretically and numerically. These preshock nonuniformities emulate imperfections of a laser target, due either to its manufacturing, like joints or feeding tubes, or to preshock perturbation seeding/growth, as well as density fluctuations in foam targets, ''thermal layers'' near heated surfaces, etc. Similarly to the shock-wave interaction with a small nonuniformity localized at a material interface, which triggers a classical Richtmyer-Meshkov (RM) instability, interaction of a shock wave with periodic or localized preshock perturbations distributed in the volume distorts the shape of the shockmore » front and can cause a RM-type instability growth. Explicit asymptotic formulas describing distortion of the shock front and the rate of RM-type growth are presented. These formulas are favorably compared both to the exact solutions of the corresponding initial-boundary-value problem and to numerical simulations. It is demonstrated that a small density modulation localized sufficiently close to a flat target surface produces the same perturbation growth as an 'equivalent' ripple on the surface of a uniform target, characterized by the same initial areal mass modulation amplitude.« less

A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene.

PubMed

Liu, Lixin; Zhou, Hailong; Cheng, Rui; Chen, Yu; Lin, Yung-Chen; Qu, Yongquan; Bai, Jingwei; Ivanov, Ivan A; Liu, Gang; Huang, Yu; Duan, Xiangfeng

2012-01-28

Graphene has attracted considerable interest as a potential material for future electronics. Although mechanical peel is known to produce high quality graphene flakes, practical applications require continuous graphene layers over a large area. The catalyst-assisted chemical vapor deposition (CVD) is a promising synthetic method to deliver wafer-sized graphene. Here we present a systematic study on the nucleation and growth of crystallized graphene domains in an atmospheric pressure chemical vapor deposition (APCVD) process. Parametric studies show that the mean size of the graphene domains increases with increasing growth temperature and CH 4 partial pressure, while the density of domains decreases with increasing growth temperature and is independent of the CH 4 partial pressure. Our studies show that nucleation of graphene domains on copper substrate is highly dependent on the initial annealing temperature. A two-step synthetic process with higher initial annealing temperature but lower growth temperature is developed to reduce domain density and achieve high quality full-surface coverage of monolayer graphene films. Electrical transport measurements demonstrate that the resulting graphene exhibits a high carrier mobility of up to 3000 cm 2 V -1 s -1 at room temperature.

A Patchy Growth via Successive and Simultaneous Cambia: Key to Success of the Most Widespread Mangrove Species Avicennia marina?

PubMed Central

Schmitz, Nele; Robert, Elisabeth M. R.; Verheyden, Anouk; Kairo, James Gitundu; Beeckman, Hans; Koedam, Nico

2008-01-01

Background and Aims Secondary growth via successive cambia has been intriguing researchers for decades. Insight into the mechanism of growth layer formation is, however, limited to the cellular level. The present study aims to clarify secondary growth via successive cambia in the mangrove species Avicennia marina on a macroscopic level, addressing the formation of the growth layer network as a whole. In addition, previously suggested effects of salinity on growth layer formation were reconsidered. Methods A 1-year cambial marking experiment was performed on 80 trees from eight sites in two mangrove forests in Kenya. Environmental (soil water salinity and nutrients, soil texture, inundation frequency) and tree characteristics (diameter, height, leaf area index) were recorded for each site. Both groups of variables were analysed in relation to annual number of growth layers, annual radial increment and average growth layer width of stem discs. Key Results Between trees of the same site, the number of growth layers formed during the 1-year study period varied from only part of a growth layer up to four growth layers, and was highly correlated to the corresponding radial increment (0–5 mm year–1), even along the different sides of asymmetric stem discs. The radial increment was unrelated to salinity, but the growth layer width decreased with increasing salinity and decreasing tree height. Conclusions A patchy growth mechanism was proposed, with an optimal growth at distinct moments in time at different positions around the stem circumference. This strategy creates the opportunity to form several growth layers simultaneously, as observed in 14 % of the studied trees, which may optimize tree growth under favourable conditions. Strong evidence was provided for a mainly endogenous trigger controlling cambium differentiation, with an additional influence of current environmental conditions in a trade-off between hydraulic efficiency and mechanical stability. PMID:18006508

Modeling crust-mantle evolution using radiogenic Sr, Nd, and Pb isotope systematics

NASA Astrophysics Data System (ADS)

Kumari, Seema; Paul, Debajyoti

2015-04-01

The present-day elemental and isotopic composition of Earth's terrestrial reservoirs can be used as geochemical constraints to study evolution of the crust-mantle system. A flexible open system evolutionary model of the Earth, comprising continental crust (CC), upper depleted mantle (UM) -source of mid-ocean ridge basalts (MORB), and lower mantle (LM) reservoir with a D" layer -source of ocean island basalts (OIB), and incorporating key radioactive isotope systematics (Rb-Sr, Sm-Nd, and U-Th-Pb), is solved numerically at 1 Ma time step for 4.55 Ga, the age of the Earth. The best possible solution is the one that produces the present-day concentrations as well as isotopic ratios in terrestrial reservoirs, compiled from published data. Different crustal growth scenarios (exponential, episodic, early and late growth), proposed in earlier studies, and its effect on the evolution of isotope systematics of terrestrial reservoirs is studied. Model simulations strongly favor a layered mantle structure satisfying majority of the isotopic constraints. In the successful model, which is similar to that proposed by Kellogg et al. (1999), the present-day UM comprises of 60% of mantle mass and extends to a depth 1600 km, whereas the LM becomes non-primitive and more enriched than the bulk silicate Earth, mainly due to addition of recycled crustal material. Modeling suggest that isotopic evolution of reservoirs is affected by the mode of crustal growth. Only two scenarios satisfied majority of the Rb-Sr and Sm-Nd isotopic constraints but failed to reproduce the present-day Pb-isotope systematics; exponential growth of crust (mean age, tc=2.3 Ga) and delayed and episodic growth (no growth for initial 900 Ma, tc=2.05 Ga) proposed by Patchett and Arndt (1986). However, assuming a slightly young Earth (4.45 Ga) better satisfies the Pb-isotope systematics. Although, the delayed crustal growth model satisfied Sr-Nd isotopic constraints, presence of early Hadean crust (4.03 and 4.4 Ga detrital zircon in Acasta gneiss and Yilgarn block, respectively), argues against it. One notable feature of successful models is an early depletion of incompatible elements (as well as Th/U ratio in the UM) by the initial 500 Ma, as a result of early formation of continental crust. Our results strongly favor exponential crustal growth and layered mantle structure. Patchett, P.J., Arndt, N.T. (1986), Earth and Planetary Science Letters, 78, 329-338. Kellogg, L.H., Hager, B.H., van der Hilst, R.D (1999), Science, 283, 1881-1884.

In situ x-ray surface diffraction chamber for pulsed laser ablation film growth studies

NASA Astrophysics Data System (ADS)

Tischler, J. Z.; Eres, G.; Lowndes, D. H.; Larson, B. C.; Yoon, M.; Chiang, T.-C.; Zschack, Paul

2000-06-01

Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to ˜1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiO3 are presented.

Formation of nickel germanides from Ni layers with thickness below 10 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jablonka, Lukas; Kubart, Tomas; Primetzhofer, Daniel

2017-03-01

The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses <5 nm<5more » nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness« less

Genetic analysis of ectopic growth suppression during planar growth of integuments mediated by the Arabidopsis AGC protein kinase UNICORN.

PubMed

Enugutti, Balaji; Schneitz, Kay

2013-01-02

The coordination of growth within a tissue layer is of critical importance for tissue morphogenesis. For example, cells within the epidermis undergo stereotypic cell divisions that are oriented along the plane of the layer (planar growth), thereby propagating the layered epidermal structure. Little is known about the developmental control that regulates such planar growth in plants. Recent evidence suggested that the Arabidopsis AGC VIII protein kinase UNICORN (UCN) maintains planar growth by suppressing the formation of ectopic multicellular protrusions in several floral tissues including integuments. In the current model UCN controls this process during integument development by directly interacting with the ABERRANT TESTA SHAPE (ATS) protein, a member of the KANADI (KAN) family of transcription factors, thereby repressing its activity. Here we report on the further characterization of the UCN mechanism. Phenotypic analysis of flowers of ucn-1 plants impaired in floral homeotic gene activity revealed that any of the four floral whorls could produce organs carrying ucn-1 protrusions. The ectopic outgrowths of ucn integuments did not accumulate detectable signals of the auxin and cytokinin reporters DR5rev::GFP and ARR5::GUS, respectively. Furthermore, wild-type and ucn-1 seedlings showed similarly strong callus formation upon in vitro culture on callus-inducing medium. We also show that ovules of ucn-1 plants carrying the dominant ats allele sk21-D exhibited more pronounced protrusion formation. Finally ovules of ucn-1 ett-1 double mutants and ucn-1 ett-1 arf4-1 triple mutants displayed an additive phenotype. These data deepen the molecular insight into the UCN-mediated control of planar growth during integument development. The presented evidence indicates that UCN downstream signaling does not involve the control of auxin or cytokinin homeostasis. The results also reveal that UCN interacts with ATS independently of an ATS/ETT complex required for integument initiation and they further emphasize the necessity to balance UCN and ATS proteins during maintenance of planar growth in integuments.

MOCVD growth and study of thin films of indium nitride

NASA Astrophysics Data System (ADS)

Jain, Abhishek

This thesis is focused on a study of MOCVD growth of InN with the goal of providing new information on the effects of growth conditions and buffer/substrate materials on InN film properties. Initial studies, using both (111) Si and (0001) sapphire substrates, identified an optimum growth temperature window of 540--560°C for the formation of stable InN films. When attempting to grow InN films on sapphire with thicknesses greater than approximately 150 nanometers using an AlN buffer layer, the InN films were observed to delaminate from the buffer/substrate at growth temperature. The combined effect of compressive stress due to high lattice mismatch between InN and AlN (˜14%) and tensile stress due to grain coalescence along with the relatively weak bond strength of InN compared to GaN and AlN, is believed to cause the InN film to crack along the interface and delaminate. To further investigate the effect of the buffer layer on InN growth, studies were carried out using GaN films grown on sapphire as the growth template. Recent MBE results had indicated a significant difference in the thermal stability and growth mode of In-polar and N-polar InN, with improved properties reported for N-polar material grown on N-polar GaN. MOCVD growth of N-polar GaN is very difficult; consequently, all of the results reported in the literature for InN growth on GaN were likely carried out on Ga-polar material resulting in films with a high surface roughness. By utilizing N-polar and Ga-polar GaN films, it was possible to produce N-polar and In-polar InN films by MOCVD, as determined by convergent beam electron diffraction (CBED) analysis. Furthermore, the polarity was found to dramatically alter the surface roughness and growth mode of the InN films with enhanced lateral growth and reduced surface roughness obtained for N-polar InN. A qualitative model was proposed to explain the different growth mechanisms observed for In-polar and N-polar InN. In spite of the improvements in surface morphology obtained with growth of N-polar InN, delamination at the InN/GaN interface was still observed in these films, and was also present in In-polar InN samples. Attempts were made to further reduce the lattice mismatch and improve the adhesion between InN and GaN by using a compositionally graded InGaN buffer layer. The fabrication of InGaN over its entire composition range is challenging since the optimal growth parameters window for InGaN varies with composition and film quality is strongly dependent on temperature and precursor flow rates. The structural properties of the InN films grown on the graded InGaN layers were comparable to films grown directly on GaN, however, the film adhesion was significantly improved with no evidence of interfacial cracks between the InN and GaN. These preliminary results indicate that graded InGaN layers can be used to improve the adhesion of InN on both Ga-polar and N-polar GaN, however, further work is needed to develop graded InGaN buffer layers or constant composition InGaN interlayers with improved structural properties for InN growth. (Abstract shortened by UMI.)

Tailoring graphene layer-to-layer growth

NASA Astrophysics Data System (ADS)

Li, Yongtao; Wu, Bin; Guo, Wei; Wang, Lifeng; Li, Jingbo; Liu, Yunqi

2017-06-01

A layered material grown between a substrate and the upper layer involves complex interactions and a confined reaction space, representing an unusual growth mode. Here, we show multi-layer graphene domains grown on liquid or solid Cu by the chemical vapor deposition method via this ‘double-substrate’ mode. We demonstrate the interlayer-induced coupling effect on the twist angle in bi- and multi-layer graphene. We discover dramatic growth disunity for different graphene layers, which is explained by the ideas of a chemical ‘gate’ and a material transport process within a confined space. These key results lead to a consistent framework for understanding the dynamic evolution of multi-layered graphene flakes and tailoring the layer-to-layer growth for practical applications.

New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles

NASA Astrophysics Data System (ADS)

Bouravleuv, A.; Ilkiv, I.; Reznik, R.; Kotlyar, K.; Soshnikov, I.; Cirlin, G.; Brunkov, P.; Kirilenko, D.; Bondarenko, L.; Nepomnyaschiy, A.; Gruznev, D.; Zotov, A.; Saranin, A.; Dhaka, V.; Lipsanen, H.

2018-01-01

We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, which allowed us to carry out the detailed study of GaAs nanowire synthesis on Si(111) substrates using colloidal Au nanoparticles as seeds for their growth. The results obtained elucidated the causes of the difference between the initial nanoparticle sizes and the diameters of the grown nanowires.

Investigation of weldable iron-aluminum alloys for corrosion protection in high temperature oxidizing-sulfidizing environments

NASA Astrophysics Data System (ADS)

Banovic, Stephen William

The objective of the present study was to investigate the corrosion behavior of weldable Fe-Al alloys in environments representative of low NOx gas compositions, i.e., high partial pressures of sulfur [p(S2)] and low partial pressures of oxygen [p(O2)]. Through an integrated experimental approach involving thermogravimetric techniques, post-exposure metallographic examination of the corroded samples, and detailed chemical microanalyses of the reaction scales, the effects of aluminum content, temperature, and gas composition on the corrosion behavior were observed. The corrosion behavior of Fe-Al alloys was found to be directly related to the type and morphology of corrosion product that formed during high temperature exposure in the oxidizing/sulfidizing environment. The inhibition stage was characterized by growth of a thin, gamma alumina scale that suppressed excessive degradation of the substrate at all temperatures. Localized mechanical failure of the initial passive scale, in combination with the inability to re-establish itself, was found to result in nodular growth of non-protective sulfide phases across the sample face due to short circuit diffusion through the gamma alumina layer. With the remnants of the initial gamma scale found between the outer and inner scale, it was concluded that these layers grew by iron diffusion outward and sulfur diffusion inward, respectively. The corrosion rate observed during development of these morphologies was directly related to the density of the nodules on the surface and the exposure temperature. The final period observed was the steady-state stage. This behavior was encountered from the onset of exposure for all Fe-5 wt% Al alloys tested, or upon coalescence of the nodular growths. After initially high corrosion rates, the weight gains were found to increase at a steady rate as subsequent growth occurred via diffusion through the continuous scale. Determination of the corrosion product growth mechanism could not be directly obtained from the thermogravimetric data. For samples with relatively high weight gains, enhanced scale growth at the comers and edges of the sample, as well as the morphology of the multi-layered, multi-phase corrosion products, violated the assumptions necessary for data manipulation by this means. The results from this study indicate that weldable compositions of Fe-Al alloys (10 wt% Al) show excellent corrosion resistance to aggressive low NO x gas compositions in the service temperature range (below 600°C). With the potential promise for applications requiring a combination of weldability and corrosion resistance in moderately reducing environments, these alloys are viable candidates for further evaluation for use as sulfidation resistant weld overlay coatings. (Abstract shortened by UMI.)

Localized surface plasmon resonance nanosensor: a high-resolution distance-dependence study using atomic layer deposition.

PubMed

Whitney, Alyson V; Elam, Jeffrey W; Zou, Shengli; Zinovev, Alex V; Stair, Peter C; Schatz, George C; Van Duyne, Richard P

2005-11-03

Atomic layer deposition (ALD) is used to deposit 1-600 monolayers of Al(2)O(3) on Ag nanotriangles fabricated by nanosphere lithography (NSL). Each monolayer of Al(2)O(3) has a thickness of 1.1 A. It is demonstrated that the localized surface plasmon resonance (LSPR) nanosensor can detect Al(2)O(3) film growth with atomic spatial resolution normal to the nanoparticle surface. This is approximately 10 times greater spatial resolution than that in our previous long-range distance-dependence study using multilayer self-assembled monolayer shells. The use of ALD enables the study of both the long- and short-range distance dependence of the LSPR nanosensor in a single unified experiment. Ag nanoparticles with fixed in-plane widths and decreasing heights yield larger sensing distances. X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and quartz crystal microbalance measurements are used to study the growth mechanism. It is proposed that the growth of Al(2)O(3) is initiated by the decomposition of trimethylaluminum on Ag. Semiquantitative theoretical calculations were compared with the experimental results and yield excellent agreement.

Modeling Radiation Fog

NASA Astrophysics Data System (ADS)

K R, Sreenivas; Mohammad, Rafiuddin

2016-11-01

Predicting the fog-onset, its growth and dissipation helps in managing airports and other modes of transport. After sunset, occurrence of fog requires moist air, low wind and clear-sky conditions. Under these circumstances radiative heat transfer plays a vital role in the NBL. Locally, initiation of fog happens when the air temperature falls below the dew-point. Thus, to predict the onset of fog at a given location, one has to compute evolution of vertical temperature profile. Earlier,our group has shown that the presence of aerosols and vertical variation in their number density determines the radiative-cooling and hence development of vertical temperature profile. Aerosols, through radiation in the window-band, provides an efficient path for air layers to lose heat to the cold, upper atmosphere. This process creates cooler air layer between warmer ground and upper air layers and resulting temperature profile facilitate the initiation of fog. Our results clearly indicates that accounting for the presence of aerosols and their radiative-transfer is important in modeling micro-meteorological process of fog formation and its evolution. DST, Govt. INDIA.

Subdaily growth patterns and organo-mineral nanostructure of the growth layers in the calcitic prisms of the shell of Concholepas concholepas Bruguière, 1789 (Gastropoda, Muricidae).

PubMed

Guzman, Nury; Ball, Alexander D; Cuif, Jean-Pierre; Dauphin, Yannicke; Denis, Alain; Ortlieb, Luc

2007-10-01

Fluorochrome marking of the gastropod Concholepas concholepas has shown that the prismatic units of the shell are built by superimposition of isochronic growth layers of about 2 mum. Fluorescent growth marks make it possible to establish the high periodicity of the cyclic biomineralization process at a standard growth rhythm of about 45 layers a day. Sulphated polysaccharides have been identified within the growth layers by using synchrotron radiation, whereas high resolution mapping enables the banding pattern of the mineral phase to be correlated with the layered distribution of polysaccharides. Atomic force microscopy has shown that the layers are made of nanograins densely packed in an organic component.

Monoamine oxidase B layer-by-layer film fabrication and characterization toward dopamine detection.

PubMed

Miyazaki, Celina Massumi; Pereira, Tamyris Paschoal; Mascagni, Daniela Branco Tavares; de Moraes, Marli Leite; Ferreira, Marystela

2016-01-01

In this work nanostructured film composites of the monoamine oxidase B (MAO-B) enzyme, free or encapsulated in liposomes, were fabricated by the layer-by-layer (LbL) self-assembly technique, employing polyethylene imine (PEI) as polycation. Initially, the MAO-B enzyme was incorporated into liposomes in order to preserve its enzymatic structure ensuring their activity and catalytic stability. The LbL film growth was monitored by surface plasmon resonance (SPR) by gold resonance angle shift analysis after each bilayer deposition. Subsequently, the films were applied as amperometric biosensors for dopamine detection using Prussian Blue (PB) as the electron mediator. The biosensor fabricated by MAO-B incorporated into liposomes composed of DPPG:POPG in the ratio (1:4) (w/w) showed the best performance with a sensitivity of 0.86 (μA cm(-2))/(mmol L(-1)) and a detection limit of 0.33 mmol L(-1).

Strength and stability of microbial plugs in porous media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarkar, A.K.; Sharma, M.M.; Georgiou, G.

1995-12-31

Mobility reduction induced by the growth and metabolism of bacteria in high-permeability layers of heterogeneous reservoirs is an economically attractive technique to improve sweep efficiency. This paper describes an experimental study conducted in sandpacks using an injected bacterium to investigate the strength and stability of microbial plugs in porous media. Successful convective transport of bacteria is important for achieving sufficient initial bacteria distribution. The chemotactic and diffusive fluxes are probably not significant even under static conditions. Mobility reduction depends upon the initial cell concentrations and increase in cell mass. For single or multiple static or dynamic growth techniques, permeability reductionmore » was approximately 70% of the original permeability. The stability of these microbial plugs to increases in pressure gradient and changes in cell physiology in a nutrient-depleted environment needs to be improved.« less

Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jandl, Adam, E-mail: jandl@mit.edu; Bulsara, Mayank T.; Fitzgerald, Eugene A.

The properties of InAs{sub x}P{sub 1−x} compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on threading dislocation density, surface roughness, epi-layer relaxation, and tilt. We find that gradual introduction of strain causes increased dislocation densities (>10{sup 6}/cm{sup 2}) and tilt of the epi-layer (>0.1°). A method of abrupt strain initiation is proposed which can result in dislocation densities as low as 1.01 × 10{sup 5} cm{sup −2} for films graded from the InP lattice constant to InAs{sub 0.15}P{sub 0.85}.more » A model for a two-energy level dislocation nucleation system is proposed based on our results.« less

Marshall Space Flight Center Propulsion Systems Department (PSD) KM Initiative

NASA Technical Reports Server (NTRS)

Caraccioli, Paul; Varnadoe, Tom; McCarter, Mike

2006-01-01

NASA Marshall Space Flight Center s Propulsion Systems Department (PSD) is four months into a fifteen month Knowledge Management (KM) initiative to support enhanced engineering decision making and analyses, faster resolution of anomalies (near-term) and effective, efficient knowledge infused engineering processes, reduced knowledge attrition, and reduced anomaly occurrences (long-term). The near-term objective of this initiative is developing a KM Pilot project, within the context of a 3-5 year KM strategy, to introduce and evaluate the use of KM within PSD. An internal NASA/MSFC PSD KM team was established early in project formulation to maintain a practitioner, user-centric focus throughout the conceptual development, planning and deployment of KM technologies and capabilities with in the PSD. The PSD internal team is supported by the University of Alabama's Aging Infrastructure Systems Center Of Excellence (AISCE), Intergraph Corporation, and The Knowledge Institute. The principle product of the initial four month effort has been strategic planning of PSD KM implementation by first determining the "as is" state of KM capabilities and developing, planning and documenting the roadmap to achieve the desired "to be" state. Activities undertaken to support the planning phase have included data gathering; cultural surveys, group work-sessions, interviews, documentation review, and independent research. Assessments and analyses have been performed including industry benchmarking, related local and Agency initiatives, specific tools and techniques used and strategies for leveraging existing resources, people and technology to achieve common KM goals. Key findings captured in the PSD KM Strategic Plan include the system vision, purpose, stakeholders, prioritized strategic objectives mapped to the top ten practitioner needs and analysis of current resource usage. Opportunities identified from research, analyses, cultural/KM surveys and practitioner interviews include: executive and senior management sponsorship, KM awareness, promotion and training, cultural change management, process improvement, leveraging existing resources and new innovative technologies to align with other NASA KM initiatives (convergence: the big picture). To enable results based incremental implementation and future growth of the KM initiative, key performance measures have been identified including stakeholder value, system utility, learning and growth (knowledge capture, sharing, reduced anomaly recurrence), cultural change, process improvement and return-on-investment. The next steps for the initial implementation spiral (focused on SSME Turbomachinery) have been identified, largely based on the organization and compilation of summary level engineering process models, data capture matrices, functional models and conceptual-level systems architecture. Key elements include detailed KM requirements definition, KM technology architecture assessment, evaluation and selection, deployable KM Pilot design, development, implementation and evaluation, and justifying full implementation (estimated Return-on-Investment). Features identified for the notional system architecture include the knowledge presentation layer (and its components), knowledge network layer (and its components), knowledge storage layer (and its components), User Interface and capabilities. This paper provides a snapshot of the progress to date, the near term planning for deploying the KM pilot project and a forward look at results based growth of KM capabilities with-in the MSFC PSD.

Marshall Space Flight Center Propulsion Systems Department (PSD) Knowledge Management (KM) Initiative

NASA Technical Reports Server (NTRS)

Caraccioli, Paul; Varnedoe, Tom; Smith, Randy; McCarter, Mike; Wilson, Barry; Porter, Richard

2006-01-01

NASA Marshall Space Flight Center's Propulsion Systems Department (PSD) is four months into a fifteen month Knowledge Management (KM) initiative to support enhanced engineering decision making and analyses, faster resolution of anomalies (near-term) and effective, efficient knowledge infused engineering processes, reduced knowledge attrition, and reduced anomaly occurrences (long-term). The near-term objective of this initiative is developing a KM Pilot project, within the context of a 3-5 year KM strategy, to introduce and evaluate the use of KM within PSD. An internal NASA/MSFC PSD KM team was established early in project formulation to maintain a practitioner, user-centric focus throughout the conceptual development, planning and deployment of KM technologies and capabilities within the PSD. The PSD internal team is supported by the University of Alabama's Aging Infrastructure Systems Center of Excellence (AISCE), lntergraph Corporation, and The Knowledge Institute. The principle product of the initial four month effort has been strategic planning of PSD KNI implementation by first determining the "as is" state of KM capabilities and developing, planning and documenting the roadmap to achieve the desired "to be" state. Activities undertaken to suppoth e planning phase have included data gathering; cultural surveys, group work-sessions, interviews, documentation review, and independent research. Assessments and analyses have beon pedormed including industry benchmarking, related local and Agency initiatives, specific tools and techniques used and strategies for leveraging existing resources, people and technology to achieve common KM goals. Key findings captured in the PSD KM Strategic Plan include the system vision, purpose, stakeholders, prioritized strategic objectives mapped to the top ten practitioner needs and analysis of current resource usage. Opportunities identified from research, analyses, cultural1KM surveys and practitioner interviews include: executive and senior management sponsorship, KM awareness, promotion and training, cultural change management, process improvement, leveraging existing resources and new innovative technologies to align with other NASA KM initiatives (convergence: the big picture). To enable results based incremental implementation and future growth of the KM initiative, key performance measures have been identified including stakeholder value, system utility, learning and growth (knowledge capture, sharing, reduced anomaly recurrence), cultural change, process improvement and return-on-investment. The next steps for the initial implementation spiral (focused on SSME Turbomachinery) have been identified, largely based on the organization and compilation of summary level engineering process models, data capture matrices, functional models and conceptual-level svstems architecture. Key elements include detailed KM requirements definition, KM technology architecture assessment, - evaluation and selection, deployable KM Pilot design, development, implementation and evaluation, and justifying full implementation (estimated Return-on-Investment). Features identified for the notional system architecture include the knowledge presentation layer (and its components), knowledge network layer (and its components), knowledge storage layer (and its components), User Interface and capabilities. This paper provides a snapshot of the progress to date, the near term planning for deploying the KM pilot project and a forward look at results based growth of KM capabilities with-in the MSFC PSD.

In vitro culture of primary plasmacytomas requires stromal cell feeder layers.

PubMed Central

Degrassi, A; Hilbert, D M; Rudikoff, S; Anderson, A O; Potter, M; Coon, H G

1993-01-01

Attempts to grow primary murine plasmacytomas in vitro have, to date, been largely unsuccessful. In this study, we demonstrate that long-term in vitro growth of primary plasmacytomas is accomplished by using feeder layers composed of stromal cells from the initial site of plasmacytomagenesis. The early neoplastic lines established in this manner are dependent on physical contact with the stromal layer, which is mediated in part by CD44, for growth and survival. The stromal cells provide at least two stimuli for the plasma cells, one being interleukin 6 and the second, of unknown nature, resulting from direct physical interaction that cannot be replaced by soluble factors. These plasma cell lines have been passaged for as long as 20 months yet still maintain characteristics associated with primary plasmacytomas as they will grow in vivo only in pristane-primed animals, indicating a continued dependence on the pristane-induced microenvironment characteristic of early-stage tumors. The ability to grow primary plasmacytomas in culture and maintain their "primary" properties provides a model system for detailed analysis of early events in plasma cell tumor progression involving neoplastic cells completely dependent on physical contact with a stromal feeder layer for survival and expansion. Images Fig. 1 Fig. 2 PMID:8446628

Effect of metallic capping layers on the superconductivity in FeSe thin films.

NASA Astrophysics Data System (ADS)

Shibayev, Pavel; Salehi, Maryam; Moon, Jisoo; Oh, Seongshik; Oh Lab Team

In the past few years, there has been an increased interest in understanding the superconducting behavior of iron selenide (FeSe). Past efforts of others aimed at growing FeSe thin films yielded some success in reaching a Tc of 40K, but at present there is a stark lack of consensus among groups working on this problem. We set a goal of growing FeSe on insulating SrTiO3 (STO) substrates by optimizing both the growth temperature and the protection layer. In our quest to achieve this, we concentrate on keeping track of each compound's structural evolution with temperature via RHEED, an aspect often overlooked in papers describing FeSe growth, thus presenting a unique perspective to tackling this multifaceted challenge. Our group has grown 1, 3, and 30 unit-cell thick FeSe on STO using a state-of-the-art molecular beam epitaxy (MBE) system in our lab. Crucially, we expect to search for superconductivity in FeSe capped by unprecedented metallic protection layers. In addition, the FeSe/STO heterostructures with FeTe protection layers will be grown to enable comparison of existing transport data and scanning tunneling spectra (STS) to data involving our own novel cappings. Support: NSF EFRI Scholars program (1542798), EPiQS Initiative (GBMF4418).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morgan, B. E.; Olson, B. J.; White, J. E.

High-fidelity large eddy simulation (LES) of a low-Atwood number (A = 0.05) Rayleigh-Taylor mixing layer is performed using the tenth-order compact difference code Miranda. An initial multimode perturbation spectrum is specified in Fourier space as a function of mesh resolution such that a database of results is obtained in which each successive level of increased grid resolution corresponds approximately to one additional doubling of the mixing layer width, or generation. The database is then analyzed to determine approximate requirements for self-similarity, and a new metric is proposed to quantify how far a given simulation is from the limit of self-similarity.more » It is determined that mixing layer growth reaches a high degree of self-similarity after approximately 4.5 generations. Statistical convergence errors and boundary effects at late time, however, make it impossible to draw similar conclusions regarding the self-similar growth of more sensitive turbulence parameters. Finally, self-similar turbulence profiles from the LES database are compared with one-dimensional simulations using the k-L-a and BHR-2 Reynolds-averaged Navier-Stokes (RANS) models. The k-L-a model, which is calibrated to reproduce a quadratic turbulence kinetic energy profile for a self-similar mixing layer, is found to be in better agreement with the LES than BHR-2 results.« less

Variable Sweep Transition Flight Experiment (VSTFE): Unified Stability System (USS). Description and Users' Manual

NASA Technical Reports Server (NTRS)

Rozendaal, Rodger A.; Behbehani, Roxanna

1990-01-01

NASA initiated the Variable Sweep Transition Flight Experiment (VSTFE) to establish a boundary layer transition database for laminar flow wing design. For this experiment, full-span upper surface gloves were fitted to a variable sweep F-14 aircraft. The development of an improved laminar boundary layer stability analysis system called the Unified Stability System (USS) is documented and results of its use on the VSTFE flight data are shown. The USS consists of eight computer codes. The theoretical background of the system is described, as is the input, output, and usage hints. The USS is capable of analyzing boundary layer stability over a wide range of disturbance frequencies and orientations, making it possible to use different philosophies in calculating the growth of disturbances on sweptwings.

Rambutan-like CNT-Al2O3 scaffolds for high-performance cathode catalyst layers of polymer electrolyte fuel cells

NASA Astrophysics Data System (ADS)

Chang, KwangHyun; Cho, Seonghun; Lim, Eun Ja; Park, Seok-Hee; Yim, Sung-Dae

2018-03-01

Rambutan-like CNT-Al2O3 scaffolds are introduced as a potential candidate for CNT-based catalyst supports to overcome the CNT issues, such as the easy bundling in catalyst ink and the poor pore structure of the CNT-based catalyst layers, and to achieve high MEA performance in PEFCs. Non-porous α-phase Al2O3 balls are introduced to enable the growth of multiwalled CNTs, and Pt nanoparticles are loaded onto the CNT surfaces. In a half-cell, the Pt/CNT-Al2O3 catalyst shows much higher durability than those of a commercial Pt/C catalyst even though it shows lower oxygen reduction reaction (ORR) activity than Pt/C. After using the decal process for MEA formation, the Pt/CNT-Al2O3 shows comparable initial performance characteristics to Pt/C, overcoming the lower ORR activity, mainly due to the facile oxygen transport in the cathode catalyst layers fabricated with the CNT-Al2O3 scaffolds. The Pt/CNT-Al2O3 also exhibits much higher durability against carbon corrosion than Pt/C owing to the durable characteristics of CNTs. Systematic analysis of single cell performance for both initial and after degradation is provided to understand the origin of the high initial performance and durable behavior of Pt/CNT-Al2O3-based catalyst layers. This will provide insights into the design of electrocatalysts for high-performance MEAs in PEFCs.

InN island shape and its dependence on growth condition of molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Cao, Y. G.; Xie, M. H.; Liu, Y.; Ng, Y. F.; Wu, H. S.; Tong, S. Y.

2003-12-01

During molecular-beam epitaxy of InN films on GaN(0001) surface, three-dimensional (3D) islands are observed following an initial wetting layer formation. Depending on deposition condition, the 3D islands take different shapes. Pyramidal islands form when excess nitrogen fluxes are used, whereas pillar-shaped islands are obtained when excess indium fluxes are employed. The pillar-shaped islands are identified to represent the equilibrium shape, whereas the pyramidal ones are limited by kinetics. As the size of islands increases, their aspect ratio shows a decreasing trend, which is attributed to a gradual relaxation of strain in the layer by defects.

Low Temperature, Selective Atomic Layer Deposition of Nickel Metal Thin Films.

PubMed

Kerrigan, Marissa M; Klesko, Joseph P; Blakeney, Kyle J; Winter, Charles H

2018-04-25

We report the growth of nickel metal films by atomic layer deposition (ALD) employing bis(1,4-di- tert-butyl-1,3-diazadienyl)nickel and tert-butylamine as the precursors. A range of metal and insulating substrates were explored. An initial deposition study was carried out on platinum substrates. Deposition temperatures ranged from 160 to 220 °C. Saturation plots demonstrated self-limited growth for both precursors, with a growth rate of 0.60 Å/cycle. A plot of growth rate versus substrate temperature showed an ALD window from 180 to 195 °C. Crystalline nickel metal was observed by X-ray diffraction for a 60 nm thick film deposited at 180 °C. Films with thicknesses of 18 and 60 nm grown at 180 °C showed low root mean square roughnesses (<2.5% of thicknesses) by atomic force microscopy. X-ray photoelectron spectroscopies of 18 and 60 nm thick films deposited on platinum at 180 °C revealed ionizations consistent with nickel metal after sputtering with argon ions. The nickel content in the films was >97%, with low levels of carbon, nitrogen, and oxygen. Films deposited on ruthenium substrates displayed lower growth rates than those observed on platinum substrates. On copper substrates, discontinuous island growth was observed at ≤1000 cycles. Film growth was not observed on insulating substrates under any conditions. The new nickel metal ALD procedure gives inherently selective deposition on ruthenium and platinum from 160 to 220 °C.

Aspects of Supercritical Turbulence: Direct Numerical Simulation of O2/H2 and C7H16/N2 Temporal Mixing Layers

NASA Technical Reports Server (NTRS)

Bellan, J.; Okongo, N. A.; Harstad, K. G.; Hutt, John (Technical Monitor)

2002-01-01

Results from Direct Numerical Simulations of temporal, supercritical mixing layers for two species systems are analyzed to elucidate species-specific turbulence aspects. The two species systems, O2/H2 and C7HG16/N2, have different thermodynamic characteristics; thus, although the simulations are performed at similar reduced pressure (ratio of the pressure to the critical pressure), the former system is dose to mixture ideality and has a relatively high solubility with respect to the latter, which exhibits strong departures from mixture ideality Due to the specified, smaller initial density stratification, the C7H16/N2 layers display higher growth and increased global molecular mixing as well as larger turbulence levels. However, smaller density gradients at the transitional state for the O2/H2 system indicate that on a local basis, the layer exhibits an enhanced mixing, this being attributed to the increased solubility and to mixture ideality. These thermodynamic features are shown to affect the irreversible entropy production (i.e. the dissipation), which is larger for the O2/H2 layer and is primarily concentrated in high density-gradient magnitude regions that are distortions of the initial density stratification boundary. In contrast, the regions of largest dissipation in the C7H16/N2 layer are located in high density-gradient magnitude regions resulting from the mixing of the two fluids.

Influence of nanoporosity on biological response of sol-gel-derived 70S30C bioactive glass monoliths

NASA Astrophysics Data System (ADS)

Thamma, Ukrit

In the field of bioactive glasses for hard tissue regeneration, the bioactivity of a material is measured by its ability to induce the formation of hydroxyapatite (HA), Ca10(PO4)6(OH)2, under physiological conditions. Due to its close chemical crystallographic resemblance to natural bones, the newly formed HA layer has been shown to be critical for the biological interaction and bonding between the surfaces of bioactive glasses and osteoblast (bone) cells. Since the formation mechanism of HA is dependent on the dissolution behavior of the bioactive glass substrate, the characteristics of HA layer are dominated by the glass composition and structure. By introducing nanoporosity into glass structure, the dissolution rate and HA growth rate on nanoporous sol-gel-derived glasses are drastically enhanced compared to that of non-porous melt-quench glasses with the same composition. While enhanced HA growth on nanoporous glass, compared to non-porous glass, was hypothesized to be associated with greater specific surface area (SSA), other studies argued that growth rate of HA layer on nanoporous glass is dominated by nanopore size distribution, and minimally affected by the bulk SSA of the underlying glass. In order to decouple the influence of nanopore size and SSA on HA formation, we have successfully fabricated homogeneous 70S30C bioactive glass monoliths with different nanopore sizes, yet similar SSA via sol-gel process. After 3-day PBS incubation of 70S30C nanoporous glass monoliths, the presence of hydroxyapatite and Type-B carbonated hydroxyapatite (HA/B-CHA) was confirmed by XPS and FTIR. Here, we report the influence of nanopore size on HA/CHA formation pathway, growth rate, and its microstructure. Due to pore-size limited diffusion of PO43-, two HA/CHA formation pathways were observed: HA/CHA surface deposition and/or HA/CHA incorporation into nanopores. HA/CHA growth rate on the surface of a nanoporous glass monolith is dominated by the pore-size limited transport of Ca2+ ions dissolved from nanoporous glass substrates. Furthermore, with rising overall growth rate controlled by nanopore size, HA/CHA microstructures evolved from needle-like, plate-like, and flower-like, respectively. Furthermore, the levels of initial cell attachment and protein adsorption on HA/CHA microstructures formed on different nanopore sizes were investigated. The initial cell attachment was quantified by measuring the density and average size of attached MC3T3-E1 cells after 2-hour seeding period. The amounts and conformation of adsorbed proteins after 2-hour incubation with HA/CHA were characterized by Western blot and FTIR, respectively. It was shown that the amounts of protein adsorption on various HA/CHA microstructures do not correlate with the initial MC3T3-E1 attachment, while the beta-sheet/alpha-helix ratios in Amide I of bovine albumin serum (BSA) adsorbed on HA/CHA microstructures do correlate to the level of initial cell attachment. This result suggests that the beta-sheet structure in BSA interacts with and activates the RGD sequence of adhesion proteins, such as fibronectin, upon adsorption, thus significantly enhancing the initial attachment of MC3T3-E1 cells. These findings provide new insights that can lead to a more detailed fundamental understanding of protein-surface and protein-protein interactions, which are crucial for the further development of bioactive material.

Improvement of laser molecular beam epitaxy grown SrTiO3 thin film properties by temperature gradient modulation growth

NASA Astrophysics Data System (ADS)

Li, Jin Long; Hao, J. H.; Li, Y. R.

2007-09-01

Oxygen diffusion at the SrTiO3/Si interface was analyzed. A method called temperature gradient modulation growth was introduced to control oxygen diffusion at the interface of SrTiO3/Si. Nanoscale multilayers were grown at different temperatures at the initial growing stage of films. Continuous growth of SrTiO3 films was followed to deposit on the grown sacrificial layers. The interface and crystallinity of SrTiO3/Si were investigated by in situ reflection high energy electron diffraction and x-ray diffraction measurements. It has been shown that the modulated multilayers may help suppress the interfacial diffusion, and therefore improve SrTiO3 thin film properties.

Substrates coated with silver nanoparticles as a neuronal regenerative material

PubMed Central

Alon, Noa; Miroshnikov, Yana; Perkas, Nina; Nissan, Ifat; Gedanken, Aharon; Shefi, Orit

2014-01-01

Much effort has been devoted to the design of effective biomaterials for nerve regeneration. Here, we report the novel use of silver nanoparticles (AgNPs) as regenerative agents to promote neuronal growth. We grew neuroblastoma cells on surfaces coated with AgNPs and studied the effect on the development of the neurites during the initiation and the elongation growth phases. We find that the AgNPs function as favorable anchoring sites, and the growth on the AgNP-coated substrates leads to a significantly enhanced neurite outgrowth. Cells grown on substrates coated with AgNPs have initiated three times more neurites than cells grown on uncoated substrates, and two times more than cells grown on substrates sputtered with a plain homogenous layer of silver. The growth of neurites on AgNPs in the elongation phase was enhanced as well. A comparison with substrates coated with gold nanoparticles (AuNPs) and zinc oxide nanoparticles (ZnONPs) demonstrated a clear silver material-driven promoting effect, in addition to the nanotopography. The growth on substrates coated with AgNPs has led to a significantly higher number of initiating neurites when compared to substrates coated with AuNPs or ZnONPs. All nanoparticle-coated substrates affected and promoted the elongation of neurites, with a significant positive maximal effect for the AgNPs. Our results, combined with the well-known antibacterial effect of AgNPs, suggest the use of AgNPs as an attractive nanomaterial – with dual activity – for neuronal repair studies. PMID:24872701

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition.

PubMed

O'Donoghue, Richard; Rechmann, Julian; Aghaee, Morteza; Rogalla, Detlef; Becker, Hans-Werner; Creatore, Mariadriana; Wieck, Andreas Dirk; Devi, Anjana

2017-12-21

Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga 2 O 3 ) thin films using hexakis(dimethylamido)digallium [Ga(NMe 2 ) 3 ] 2 with oxygen (O 2 ) plasma on Si(100). The use of O 2 plasma was found to have a significant improvement on the growth rate and deposition temperature when compared to former Ga 2 O 3 processes. The process yielded the second highest growth rates (1.5 Å per cycle) in terms of Ga 2 O 3 ALD and the lowest temperature to date for the ALD growth of Ga 2 O 3 and typical ALD characteristics were determined. From in situ quartz crystal microbalance (QCM) studies and ex situ ellipsometry measurements, it was deduced that the process is initially substrate-inhibited. Complementary analytical techniques were employed to investigate the crystallinity (grazing-incidence X-ray diffraction), composition (Rutherford backscattering analysis/nuclear reaction analysis/X-ray photoelectron spectroscopy), morphology (X-ray reflectivity/atomic force microscopy) which revealed the formation of amorphous, homogeneous and nearly stoichiometric Ga 2 O 3 thin films of high purity (carbon and nitrogen <2 at.%) under optimised process conditions. Tauc plots obtained via UV-Vis spectroscopy yielded a band gap of 4.9 eV and the transmittance values were more than 80%. Upon annealing at 1000 °C, the transformation to oxygen rich polycrystalline β-gallium oxide took place, which also resulted in the densification and roughening of the layer, accompanied by a slight reduction in the band gap. This work outlines a fast and efficient method for the low temperature ALD growth of Ga 2 O 3 thin films and provides the means to deposit Ga 2 O 3 upon thermally sensitive polymers like polyethylene terephthalate.

Defect reduction in Si-doped Al{sub 0.45}Ga{sub 0.55}N films by SiN{sub x} interlayer method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yang; Chen, Shengchang; Kong, Man

2014-01-28

The dislocation density in AlGaN epitaxial layers with Al content as high as 45% grown on sapphire substrates has been effectively reduced by introducing an in-situ deposited SiN{sub x} nanomask layer in this study. By closely monitoring the evolution of numerous material properties, such as surface morphology, dislocation density, photoluminescence, strain states, and electron mobility of the Si-Al{sub 0.45}Ga{sub 0.55}N layers as the functions of SiN{sub x} interlayer growth time, the surface coverage fraction of SiN{sub x} is found to be a crucial factor determining the strain states and dislocation density. The dependence of the strain states and the dislocationmore » density on the surface coverage fraction of SiN{sub x} nanomask supports the very different growth models of Al-rich AlGaN on SiN{sub x} interlayer due to the reduced nucleation selectivity compared with the GaN counterpart. Compared with GaN, which can only nucleate at open pores of SiN{sub x} nanomask, Al-rich AlGaN can simultaneously nucleate at both open pores and SiN{sub x} covered areas. Dislocations will annihilate at the openings due to the 3D growth initiated on the opening area, while 2D growth mode is preserved on SiN{sub x} and the threading dislocations are also preserved. During the following growth process, lateral overgrowth will proceed from the Al{sub 0.45}Ga{sub 0.55}N islands on the openings towards the regions covered by SiN{sub x}, relaxing the compressive strain and bending the dislocations at the same time.« less

MOVPE growth and transport characterization of Bi2-xSbxTe3-ySey films

NASA Astrophysics Data System (ADS)

Kuznetsov, P. I.; Yakushcheva, G. G.; Shchamkhalova, B. S.; Jitov, V. A.; Temiryazev, A. G.; Sizov, V. E.; Yapaskurt, V. O.

2018-02-01

We present a first study of films of the quaternary Bi2-xSbxTe3-ySey solid solutions on (0 0 0 1) sapphire substrates grown by atmospheric pressure MOVPE. Trimethylbismuth, trimethylantimony, diisopropylselenide and diethyltelluride were used as precursors. To passivate the free bonds of the substrate and to improve the epitaxy, a thin (15 nm) ZnTe buffer layer was first grown. EDX analysis of the films grown at a temperature of 445 °C and about 10-fold excess of chalcogen in the vapor phase indicates on their compliance with V2VI3 stoichiometry. AFM and SEM investigations showed that at the initial stage of deposition the Stranski-Krastanov growth mode is dominant. Complete coalescence of nanoislands occurs at a thickness about 60 nm and further film formation is in the 2D layer-by-layer growth mode. A high mole fraction of antimony in the vapor phase leads to bad crystalline quality of the films and even to their discontinuity. Transport properties of the Bi2-xSbxTe3-ySey films were evaluated using Van der Pauw Hall effect measurements in the range of temperatures of 10-300 K. Some films are always n- or p-type; in other samples the change of conductivity from p- to n-type was observed when the temperature decreases.

TiOx thin films grown on Pd(100) and Pd(111) by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Farstad, M. H.; Ragazzon, D.; Grönbeck, H.; Strømsheim, M. D.; Stavrakas, C.; Gustafson, J.; Sandell, A.; Borg, A.

2016-07-01

The growth of ultrathin TiOx (0≤x≤2) films on Pd(100) and Pd(111) surfaces by chemical vapor deposition (CVD), using Titanium(IV)isopropoxide (TTIP) as precursor, has been investigated by high resolution photoelectron spectroscopy, low energy electron diffraction and scanning tunneling microscopy. Three different TiOx phases and one Pd-Ti alloy phase have been identified for both surfaces. The Pd-Ti alloy phase is observed at the initial stages of film growth. Density functional theory (DFT) calculations for Pd(100) and Pd(111) suggest that Ti is alloyed into the second layer of the substrate. Increasing the TTIP dose yields a wetting layer comprising Ti2 + species (TiOx, x ∼0.75). On Pd(100), this phase exhibits a mixture of structures with (3 × 5) and (4 × 5) periodicity with respect to the Pd(100) substrate, while an incommensurate structure is formed on Pd(111). Most importantly, on both surfaces this phase consists of a zigzag pattern similar to observations on other reactive metal surfaces. Further increase in coverage results in growth of a fully oxidized (TiO2) phase on top of the partially oxidized layer. Preliminary investigations indicate that the fully oxidized phase on both Pd(100) and Pd(111) may be the TiO2(B) phase.

SMOS Soil Moisture Data Assimilation in the NASA Land Information System: Impact on LSM Initialization and NWP Forecasts

NASA Technical Reports Server (NTRS)

Blankenship, Clay; Case, Jonathan L.; Zavodsky, Bradley

2015-01-01

Land surface models are important components of numerical weather prediction (NWP) models, partitioning incoming energy into latent and sensitive heat fluxes that affect boundary layer growth and destabilization. During warm-season months, diurnal heating and convective initiation depend strongly on evapotranspiration and available boundary layer moisture, which are substantially affected by soil moisture content. Therefore, to properly simulate warm-season processes in NWP models, an accurate initialization of the land surface state is important for accurately depicting the exchange of heat and moisture between the surface and boundary layer. In this study, soil moisture retrievals from the Soil Moisture and Ocean Salinity (SMOS) satellite radiometer are assimilated into the Noah Land Surface Model via an Ensemble Kalman Filter embedded within the NASA Land Information System (LIS) software framework. The output from LIS-Noah is subsequently used to initialize runs of the Weather Research and Forecasting (WRF) NWP model. The impact of assimilating SMOS retrievals is assessed by initializing the WRF model with LIS-Noah output obtained with and without SMOS data assimilation. The southeastern United States is used as the domain for a preliminary case study. During the summer months, there is extensive irrigation in the lower Mississippi Valley for rice and other crops. The irrigation is not represented in the meteorological forcing used to drive the LIS-Noah integration, but the irrigated areas show up clearly in the SMOS soil moisture retrievals, resulting in a case with a large difference in initial soil moisture conditions. The impact of SMOS data assimilation on both Noah soil moisture fields and on short-term (0-48 hour) WRF weather forecasts will be presented.

Large-area, laterally-grown epitaxial semiconductor layers

DOEpatents

Han, Jung; Song, Jie; Chen, Danti

2017-07-18

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

Disilane-based cyclic deposition/etch of Si, Si:P and Si1-yCy:P layers: I. The elementary process steps

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Deguet, C.

2013-02-01

We have benchmarked the 550 °C, 20 Torr growth of Si:P and Si1-yCy:P using SiH4 and Si2H6. P segregation has prevented us from reaching P+ ion concentrations in Si higher than a few 1019 cm-3 using SiH4; the resulting surface ‘poisoning’ led to a severe growth rate reduction. Meanwhile, [P+] increased linearly with the phosphine flow when using Si2H6 as the Si precursor; values as high as 1.7 × 1020 cm-3 were obtained. The Si:P growth rate using Si2H6 was initially stable then increased as the PH3 flow increased. Mono-methylsilane flows 6.5-10 times higher were needed with Si2H6 than with SiH4 to reach the same substitutional C concentrations in intrinsic Si1-yCy layers ([C]subst. up to 1.9%). Growth rates were approximately six times higher with Si2H6 than with SiH4, however. 30 nm thick Si1-yCy layers became rough as [C]subst. exceeded 1.6% (formation of increasing numbers of islands). We have also studied the structural and electrical properties of ‘low’ and ‘high’ C content Si1-yCy:P layers (˜ 1.5 and 1.8%, respectively) grown with Si2H6. Adding significant amounts of PH3 led to a reduction of the tensile strain in the films. This was due to the incorporation of P atoms (at the expense of C atoms) in the substitutional sites of the Si matrix. Si1-yCy:P layers otherwise became rough as the PH3 flow increased. Resistivities lower than 1 mΩ cm were nevertheless associated with those Si1-yCy:P layers, with P atomic concentrations at most 3.9 × 1020 cm-3. Finally, we have quantified the beneficial impact of adding GeH4 to HCl for the low-temperature etching of Si. Etch rates 12-36 times higher with HCl + GeH4 than with pure HCl were achieved at 20 Torr. Workable etch rates close to 1 nm min-1 were obtained at 600 °C (versus 750 °C for pure HCl), enabling low-temperature cyclic deposition/etch strategies for the selective epitaxial growth of Si, Si:P and Si1-yCy:P layers on patterned wafers.

When is one layer complete? Using simultaneous in-situ RHEED and x-ray reflectivity to map layer-by-layer thin-film oxide growth

NASA Astrophysics Data System (ADS)

Sullivan, M. C.; Ward, M. J.; Joress, H.; Gutierrez-Llorente, A.; White, A. E.; Woll, A.; Brock, J. D.

2014-03-01

The most popular tool for characterizing in situ layer-by-layer growth is Reflection High-Energy Electron Diffraction (RHEED). X-ray reflectivity can also be used to study layer-by-layer growth, as long as the incident angle of the x-rays is far from a Bragg peak. During layer-by-layer homoepitaxial growth, both the RHEED intensity and the reflected x-ray intensity will oscillate, and each complete oscillation indicates the addition of one layer of material. However, it is well documented, but not well understood, that the maxima in the RHEED intensity oscillations do not necessarily occur at the completion of a layer. In contrast, the maxima in the x-ray intensity oscillations do occur at the completion of a layer, thus the RHEED and x-ray oscillations are rarely in phase. We present our results on simultaneous in situ x-ray reflectivity and RHEED during layer-by-layer growth of SrTiO3 and discuss how to determine the completion of a layer for RHEED oscillations independent of the phase of the RHEED oscillation. Supported by DOE Office of Basic Energy Sciences Award DE-SC0001086, CHESS is supported by the NSF & NIH/NIGMS via NSF award DMR-0936384.

Re-Innovating Recycling for Turbulent Boundary Layer Simulations

NASA Astrophysics Data System (ADS)

Ruan, Joseph; Blanquart, Guillaume

2017-11-01

Historically, turbulent boundary layers along a flat plate have been expensive to simulate numerically, in part due to the difficulty of initializing the inflow with ``realistic'' turbulence, but also due to boundary layer growth. The former has been resolved in several ways, primarily dedicating a region of at least 10 boundary layer thicknesses in width to rescale and recycle flow or by extending the region far enough downstream to allow a laminar flow to develop into turbulence. Both of these methods are relatively costly. We propose a new method to remove the need for an inflow region, thus reducing computational costs significantly. Leveraging the scale similarity of the mean flow profiles, we introduce a coordinate transformation so that the boundary layer problem can be solved as a parallel flow problem with additional source terms. The solutions in the new coordinate system are statistically homogeneous in the downstream direction and so the problem can be solved with periodic boundary conditions. The present study shows the stability of this method, its implementation and its validation for a few laminar and turbulent boundary layer cases.

Time-dependent changes in the growth of ultrathin ionic liquid films on Ag(111).

PubMed

Lexow, Matthias; Talwar, Timo; Heller, Bettina S J; May, Benjamin; Bhuin, Radha G; Maier, Florian; Steinrück, Hans-Peter

2018-05-09

Various amounts of the ionic liquids (ILs) [C1C1Im][Tf2N] and [C8C1Im][Tf2N] were deposited in vacuo by physical vapour deposition (PVD) on single crystalline Ag(111) at room temperature and subsequently monitored by angle-resolved X-ray photoelectron spectroscopy (ARXPS) as a function of time. For very low coverages of up to one closed molecular layer, an initial wetting layer was rapidly formed for both ILs. Deposition of higher amounts of [C1C1Im][Tf2N] revealed an initial three-dimensional film morphology. On the time scale of hours, characteristic changes of the XPS signals were observed. These are interpreted as island spreading and a transformation towards a nearly two dimensional [C1C1Im][Tf2N] film as the final state. In contrast, a film morphology close to 2D was found from the very beginning for [C8C1Im][Tf2N] deposited on Ag(111) demonstrating the influence of the alkyl chain length on the growth kinetics. These studies also highlight the suitability of time-resolved ARXPS for the investigation of IL/solid interfaces, which play a crucial role in IL thin film applications such as in catalysis, sensor, lubrication, and coating technologies.

Sensitivity of the two-dimensional shearless mixing layer to the initial turbulent kinetic energy and integral length scale

NASA Astrophysics Data System (ADS)

Fathali, M.; Deshiri, M. Khoshnami

2016-04-01

The shearless mixing layer is generated from the interaction of two homogeneous isotropic turbulence (HIT) fields with different integral scales ℓ1 and ℓ2 and different turbulent kinetic energies E1 and E2. In this study, the sensitivity of temporal evolutions of two-dimensional, incompressible shearless mixing layers to the parametric variations of ℓ1/ℓ2 and E1/E2 is investigated. The sensitivity methodology is based on the nonintrusive approach; using direct numerical simulation and generalized polynomial chaos expansion. The analysis is carried out at Reℓ 1=90 for the high-energy HIT region and different integral length scale ratios 1 /4 ≤ℓ1/ℓ2≤4 and turbulent kinetic energy ratios 1 ≤E1/E2≤30 . It is found that the most influential parameter on the variability of the mixing layer evolution is the turbulent kinetic energy while variations of the integral length scale show a negligible influence on the flow field variability. A significant level of anisotropy and intermittency is observed in both large and small scales. In particular, it is found that large scales have higher levels of intermittency and sensitivity to the variations of ℓ1/ℓ2 and E1/E2 compared to the small scales. Reconstructed response surfaces of the flow field intermittency and the turbulent penetration depth show monotonic dependence on ℓ1/ℓ2 and E1/E2 . The mixing layer growth rate and the mixing efficiency both show sensitive dependence on the initial condition parameters. However, the probability density function of these quantities shows relatively small solution variations in response to the variations of the initial condition parameters.

R7 Photoreceptor Axon Growth Is Temporally Controlled by the Transcription Factor Ttk69, Which Inhibits Growth in Part by Promoting Transforming Growth Factor-β/Activin Signaling

PubMed Central

Kniss, Jonathan S.; Holbrook, Scott

2013-01-01

Work on axon growth has classically focused on understanding how extrinsic cues control growth cone dynamics independent of the cell body. However, more recently, neuron-intrinsic transcription factors have been shown to influence both normal and regenerative axon growth, suggesting that understanding their mechanism of action is of clinical importance. We are studying axon targeting in the Drosophila visual system and here show that the BTB/POZ zinc-finger transcription factor Tramtrack69 (Ttk69) plays an instructive role in inhibiting the growth of R7 photoreceptor axon terminals. Although ttk69 mutant R7 axons project to the correct medullar target layer, M6, their terminals fail to remain retinotopically restricted and instead grow laterally within M6. This overgrowth is not caused by an inability to be repelled by neighboring R7 axons or by an inability to recognize and initiate synapse formation with postsynaptic targets. The overgrowth is progressive and occurs even if contact between ttk69 mutant R7 axons and their normal target layer is disrupted. Ttk69 is first expressed in wild-type R7s after their axons have reached the medulla; ttk69 mutant R7 axon terminal overgrowth begins shortly after this time point. We find that expressing Ttk69 prematurely in R7s collapses their growth cones and disrupts axon extension, indicating that Ttk69 plays an instructive role in this process. A TGF-β/Activin pathway was shown previously to inhibit R7 axon terminal growth. We find that Ttk69 is required for normal activation of this pathway but that Ttk69 likely also inhibits R7 axon growth by a TGF-β/Activin-independent mechanism. PMID:23345225

Initial reactive sticking coefficient of O 2 on Si(111)-7 × 7 at elevated temperatures

NASA Astrophysics Data System (ADS)

Shklyaev, A. A.; Suzuki, Takanori

1996-05-01

Kinetics of the initial stage of oxide growth in the reaction of oxygen with Si(111)-7 × 7 at temperatures from room temperature to Ttr, and pressures from 5 × 10 -9 to 2 × 10 -7 Torr are investigated with optical second-harmonic generation, here temperature from oxide growth to Si etching without oxide growth. At a fixed pressure, the initial reactive sticking coefficient ( S0), obtained from the rate of oxide growth, decreases with increasing temperature to S0=0 at Ttr. We have found that the initial reacti sticking coefficient depends on the O 2 pressure. At temperatures above 320°C, the whole temperature dependence of S0 is situated in the region of higher temperatures for higher O 2 pressures ( Pox). Moreover, an additional bend in the temperature dependence of S0 is observed for Pox>1 × 10 -8 Torr near Ttr. A precursor-mediated adsorption model involving the reaction of formation is considered. The parameters of this model, obtained from the best fits to the experimental data, show that oxide growth rate constant increases and volatile SiO formation rate constant decreases as a function of O 2 pressure. At zero oxide coverage, the pressure dependence of the reaction rate constants is suggested to originate from interaction in the layer of the chemisorbed precursor species, whose coverage depends on the O 2 pressure. The volatile SiO formation is described by a three-step sequential two-channel process through the chemisorbed O 2 precursor species, whereas one of the channels with a larger activation energy is suggested to induce the additional bend in S0( T) near Ttr at higher O 2 pressures.

Dislocation Density Reduction in Cadmium Telluride and Mercury Cadmium Telluride Grown on Silicon Using Thermal Cycle Annealing

NASA Astrophysics Data System (ADS)

Farrell, Stuart Bennett

Mercury Cadmium Telluride (HgCdTe) is a material of great importance for infrared focal plane array applications. In order to produce large format detector arrays this material needs to be grown on a large area substrate, with silicon being the most mature substrate, it is the optimal choice for large format arrays. To help mitigate the effect of the lattice mismatch between the two materials, cadmium telluride (CdTe) is used as a buffer layer. The CdTe itself has nearly the same lattice mismatch (19.3%) to silicon, but due to the technological advantages it offers and compatibility with HgCdTe, it is the best buffer layer choice. The lattice mismatch between HgCdTe/CdTe and the silicon substrate leads to the formation of dislocations at densities in the mid 106 to low 107 cm-2 range in the epilayers. Such a high dislocation density greatly effects detector device performance quantities such as operability and sensitivity. Hence, the dislocation density should be brought down by at least an order of magnitude by adopting novel in situ and ex situ material processing techniques. In this work, in situ and ex situ thermal cycle annealing (TCA) methods have been used to decrease dislocation density in CdTe and HgCdTe. During the molecular beam epitaxial (MBE) growth of the CdTe buffer layer, the growth was interrupted and the layer was subjected to an annealing cycle within the growth chamber under tellurium overpressure. During the annealing cycle the temperature is raised to beyond the growth temperature (290 → 550 °C) and then allowed to cool before resuming growth again. This process was repeated several times during the growth. After growth, a portion of the material was subjected to a dislocation decoration etch in order to count the etch pit density (EPD) which has a direct correspondence with the dislocation density in the crystal. The crystalline quality was also characterized by x-ray diffraction rocking curves and photoluminescence. The in situ TCA resulted in almost a two order of magnitude reduction in the dislocation density, and factor of two reduction in the full width at half maximum of the x-ray rocking curves. Photoluminescence also suggested a decrease in the number of dislocations present in the material. This decrease is attributed to the movement of the dislocations during the annealing cycles and their subsequent interaction and annihilation. To decrease the dislocation density in HgCdTe layers grown on CdTe/Si composite substrates, ex situ TCA has been performed in a sealed quartz ampoule under a mercury overpressure in a conventional clam-shell furnace. The reduction in the dislocation density has been studied as a function of growth/annealing parameters such as the initial (as grown) dislocation density, buffer layer quality, Hg overpressure, annealing temperature, annealing duration, and the number of annealing cycles. It was found that the primary parameters that affect dislocation density reduction are the annealing temperature and the number of annealing cycles. Some secondary affects were observed by varying the duration spent at the maximum annealing temperature. Parameters such as the initial dislocation density and buffer layer quality did not play a significant role in dislocation reduction. Though no correlation between Hg overpressure and dislocation density was found, it did play a vital role in maintaining the quality of the surface. By using the ex situ TCA, a dislocation density of 1 x 106 cm-2 could be reliably and consistently achieved in HgCdTe layers that had a starting density ranging from 0.5 -- 3 x 107 cm-2. Examination of the annealing parameters revealed an exponential decay in the dislocation density as a function of increasing number of annealing cycles. In addition, a similar exponential decay was observed between the dislocation density and the annealing temperature. The decrease in the dislocation density is once again attributed to moving dislocations that interact and annihilate. This behavior was modeled using a second order reaction equation. It was found that the results of the model closely agreed with the experimental values for a wide range of annealing temperatures and number of annealing cycles.

Silicon carbon(001) gas-source molecular beam epitaxy from methyl silane and silicon hydride: The effects of carbon incorporation and surface segregation on growth kinetics

NASA Astrophysics Data System (ADS)

Foo, Yong-Lim

Si1-yCy alloys were grown on Si(001) by gas-source molecular-beam epitaxy (GS-MBE) from Si2H6/CH3 SiH3 mixtures as a function of C concentration y (0 to 2.6 at %) and deposition temperature Ts (500--600°C). High-resolution x-ray diffraction reciprocal lattice maps show that all layers are in tension and fully coherent with their substrates. Film growth rates R decrease with both y and Ts, and the rate of decrease in R as a function of y increases rapidly with Ts. In-situ isotopically-tagged D2 temperature-programmed desorption (TPD) measurements reveal that C segregates to the second-layer during steady-state Si1-y Cy(001) growth. This, in turn, results in charge-transfer from Si surface dangling bonds to second-layer C atoms, which have a higher electronegativity than Si. From the TPD results, we obtain the coverage θ Si*(y, Ts) of Si* surface sites with C backbonds as well as H2 desorption energies Ed from both Si and Si* surface sites. This leads to an increase in the H2 desorption rate, and hence should yield higher film deposition rates, with increasing y and/or Ts during Si1-yCy(001) growth. The effect, however, is more than offset by the decrease in Si2H 6 reactive sticking probabilities at Si* surface sites. Film growth rates R(Ts, JSi2H6,J CH3SiH3 ) calculated using a simple transition-state kinetic model, together with measured kinetic parameters, were found to be in good agreement with the experimental data. At higher growth temperature (725 and 750°C), superlattice structures consisting of alternating Si-rich and C-rich sublayers form spontaneously during the gas-source molecular beam epitaxial growth of Si1-y Cy layers from constant Si2H6 and CH 3SiH3 precursor fluxes. The formation of a self-organized superstructure is due to a complex interaction among competing surface reactions. During growth of the initial Si-rich sublayer, C strongly segregates to the second layer resulting in charge transfer from surface Si atom dangling bonds of to C backbonds. This, in turn, decreases the Si2H6 sticking probability and, hence, the sublayer deposition rate. This continues until a critical C coverage is reached allowing the nucleation and growth of a C-rich sublayer until the excess C is depleted. At this point, the self-organized bilayer process repeats itself.

Computer simulation studies of the growth of strained layers by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Faux, D. A.; Gaynor, G.; Carson, C. L.; Hall, C. K.; Bernholc, J.

1990-08-01

Two new types of discrete-space Monte Carlo computer simulation are presented for the modeling of the early stages of strained-layer growth by molecular-beam epitaxy. The simulations are more economical on computer resources than continuous-space Monte Carlo or molecular dynamics. Each model is applied to the study of growth onto a substrate in two dimensions with use of Lennard-Jones interatomic potentials. Up to seven layers are deposited for a variety of lattice mismatches, temperatures, and growth rates. Both simulations give similar results. At small lattice mismatches (<~4%) the growth is in registry with the substrate, while at high mismatches (>~6%) the growth is incommensurate with the substrate. At intermediate mismatches, a transition from registered to incommensurate growth is observed which commences at the top of the crystal and propagates down to the first layer. Faster growth rates are seen to inhibit this transition. The growth mode is van der Merwe (layer-by-layer) at 2% lattice mismatch, but at larger mismatches Volmer-Weber (island) growth is preferred. The Monte Carlo simulations are assessed in the light of these results and the ease at which they can be extended to three dimensions and to more sophisticated potentials is discussed.

Layer-by-layer growth of vertex graph of Penrose tiling

NASA Astrophysics Data System (ADS)

Shutov, A. V.; Maleev, A. V.

2017-09-01

The growth form for the vertex graph of Penrose tiling is found to be a regular decagon. The lower and upper bounds for this form, coinciding with it, are strictly proven. A fractal character of layer-by-layer growth is revealed for some subgraphs of the vertex graph of Penrose tiling.

OPTICAL COHERENCE TOMOGRAPHY BASELINE PREDICTORS FOR INITIAL BEST-CORRECTED VISUAL ACUITY RESPONSE TO INTRAVITREAL ANTI-VASCULAR ENDOTHELIAL GROWTH FACTOR TREATMENT IN EYES WITH DIABETIC MACULAR EDEMA: The CHARTRES Study.

PubMed

Santos, Ana R; Costa, Miguel Â; Schwartz, Christian; Alves, Dalila; Figueira, João; Silva, Rufino; Cunha-Vaz, Jose G

2018-06-01

To identify baseline optical coherence tomography morphologic characteristics predicting the visual response to anti-vascular endothelial growth factor therapy in diabetic macular edema. Sixty-seven patients with diabetic macular edema completed a prospective, observational study (NCT01947881-CHARTRES). All patients received monthly intravitreal injections of Lucentis for 3 months followed by PRN treatment and underwent best-corrected visual acuity measurements and spectral domain optical coherence tomography at Baseline, Months 1, 2, 3, and 6. Visual treatment response was characterized as good (≥10 letters), moderate (5-10 letters), and poor (<5 or letters loss). Spectral domain optical coherence tomography images were graded before and after treatment by a certified Reading Center. One month after loading dose, 26 patients (38.80%) were identified as good responders, 19 (28.35%) as Moderate and 22 (32.83%) as poor responders. There were no significant best-corrected visual acuity and central retinal thickness differences at baseline (P = 0.176; P = 0.573, respectively). Ellipsoid zone disruption and disorganization of retinal inner layers were good predictors for treatment response, representing a significant risk for poor visual recovery to anti-vascular endothelial growth factor therapy (odds ratio = 10.96; P < 0.001 for ellipsoid zone disruption and odds ratio = 7.05; P = 0.034 for disorganization of retinal inner layers). Damage of ellipsoid zone, higher values of disorganization of retinal inner layers, and central retinal thickness decrease are good predictors of best-corrected visual acuity response to anti-vascular endothelial growth factor therapy.

Effects of Mg pre-flow, memory, and diffusion on the growth of p-GaN with MOCVD (Conference Presentation)

NASA Astrophysics Data System (ADS)

Tu, Charng-Gan; Chen, Hao-Tsung; Chen, Sheng-Hung; Chao, Chen-Yao; Kiang, Yean-Woei; Yang, Chih-Chung

2017-02-01

In MOCVD growth, two key factors for growing a p-type structure, when the modulation growth or delta-doping technique is used, include Mg memory and diffusion. With high-temperature growth (>900 degree C), doped Mg can diffuse into the under-layer. Also, due to the high-pressure growth and growth chamber coating in MOCVD, plenty Mg atoms exist in the growth chamber for a duration after Mg supply is ended. In this situation, Mg doping continues in the following designated un-doped layers. In this paper, we demonstrate the study results of Mg preflow, memory, and diffusion. The results show that pre-flow of Mg into the growth chamber can lead to a significantly higher Mg doping concentration in growing a p-GaN layer. In other words, a duration for Mg buildup is required for high Mg incorporation. Based on SIMS study, we find that with the pre-flow growth, a high- and a low-doping p-GaN layer are formed. The doping concentration difference between the two layers is about 10 times. The thickness of the high- (low-) doping layer is about 40 (65) nm. The growth of the high-doping layer starts 10-15 min after Mg supply starts (Mg buildup time). The diffusion length of Mg into the AlGaN layer beneath (Mg content reduced to <5%) is about 10 nm. The memory time of Mg in the growth chamber is about 60 min, after which the Mg doping concentration is reduced to <1%.

Templating Growth of a Pseudomorphic Lepidocrocite Microshell at the Calcite–Water Interface

DOE PAGES

Yuan, Ke; Lee, Sang Soo; Wang, Jun; ...

2018-01-05

The growth of lepidocrocite (gamma-FeOOH) has been observed through oxidation of Fe(II) on calcite (CaCO 3). Here, we seek to understand the structural relation between lepidocrocite and the calcite substrate and its growth mechanism. The formation of iron oxyhydroxide layers having distinct morphologies was observed during the dissolution of calcite in acidic Fe(II)-rich solutions. A pseudomorphic lepidocrocite shell together with multiple iron oxyhydroxide layers encapsulated within the shell was imaged by optical and transmission X-ray microscopies. The presence of a several-nanometer-thick ordered lepidocrocite film was observed by X-ray reflectivity, with the lepidocrocite (100) plane oriented parallel to the calcite (104)more » surface. Lath-shaped lepidocrocite aggregates formed during the initial precipitation, which eventually grew into clusters of parallel platy crystals. The formation of a nanometer-thick well-ordered lepidocrocite film on a pristine calcite surface appears critical for the subsequent pseudomorphic overgrowth. Detachment of the lepidocrocite film from the dissolving calcite surface yielded a free-standing pseudomorphic iron oxyhydroxide shell, suggesting weak interactions between the shell and the calcite substrate. This growth mechanism yields the potential of using carbonate minerals as templates for pseudomorphic synthesis of iron oxyhydroxides having well-defined size and morphology.« less

Optimization of solar cells for air mass zero operation and a study of solar cells at high temperatures

NASA Technical Reports Server (NTRS)

Hovel, H. J.; Vernon, S. M.

1982-01-01

The power to weight ratio of GaAs cells can be reduced by fabricating devices using thin GaAs films on low density substrate materials (silicon, glass, plastics). A graphoepitaxy technique was developed which uses fine geometric patterns in the substrate to affect growth. Initial substrates were processed by etching 25 microns deep grooves into 100 oriented wafers; fine-grained polycrystalline GaAs layers 25-50 microns thick were then deposited on these and recrystallization was performed, heating the substrates to above the GaAs melting point in ASH3 atmosphere, resulting in large grain regrowth oriented along the groove dimensions. Experiments with smaller groove depths and spacings were initially encouraging; single large GaAs grains would totally cover one and often two groove fields of 14 groove each spanning several hundred microns. Dielectric coatings on the grooved substrates were also used to modify the growth.

Synthesis and characterization of silicon nanowire arrays for photovoltaic applications

NASA Astrophysics Data System (ADS)

Eichfeld, Sarah M.

The overall objective of this thesis was the development of processes for the fabrication of radial p-n silicon nanowires (SiNWs) using bottom-up nanowire growth techniques on silicon and glass substrates. Vapor-liquid-solid (VLS) growth was carried out on Si(111) substrates using SiCl4 as the silicon precursor. Growth conditions including temperature, PSiCl4, PH2, and position were investigated to determine the optimum growth conditions for epitaxially oriented silicon nanowire arrays. The experiments revealed that the growth rate of the silicon nanowires exhibits a maximum as a function of PSiCl4 and P H2. Gas phase equilibrium calculations were used in conjunction with a mass transport model to explain the experimental data. The modeling results demonstrate a similar maximum in the mass of solid silicon predicted to form as a function of PSiCl4 and PH2, which results from a change in the gas phase concentration of SiHxCly and SiClx species. This results in a shift in the process from growth to etching with increasing PSiCl4. In general, for the atmospheric pressure conditions employed in this study, growth at higher temperatures >1000°C and higher SiCl4 concentrations gave the best results. The growth of silicon nanowire arrays on anodized alumina (AAO)-coated glass substrates was also investigated. Glass will not hold up to the high temperatures required for Si nanowire growth with SiCl4 so SiH 4 was used as the Si precursor instead. Initial studies were carried out to measure the resistivity of p-type and n-type silicon nanowires grown in freestanding AAO membranes. A series of nanowire samples were grown in which the doping and the nanowire length inside the membrane were varied. Circular metal contacts were deposited on the top surface of the membranes and the resistance of the nanowire arrays was measured. The measured resistance versus nanowire length was plotted and the nanowire resistivity was extracted from the slope. The resistivity of the silicon nanowires grown in the AAO membranes was then compared to the resistivity of silicon nanowires grown on Si and measured using single wire four-point measurements. It was determined that the undoped silicon nanowires grown in AAO have a lower resistivity compared to nanowires grown on Si substrates. This indicates the presence of an unintentional acceptor. The resistivity of the silicon nanowires was found to change as the dopant/SiH4 ratio was varied during growth. The growth and doping conditions developed from this study were then used to fabricate p-type SiNW arrays on the AAO coated glass substrates. The final investigation in this thesis focused on the development of a process for radial coating of an n-type Si layer on the p-type Si nanowires. While prior studies demonstrated the fabrication of polycrystalline n-type Si shell layers on Si nanowires, an epitaxial n-type Si shell layer is ultimately of interest to obtain a high quality p-n interface. Initial n-type Si thin film deposition studies were carried out on sapphire substrates using SiH 4 as the silicon precursor to investigate the effect of growth conditions on thickness uniformity, growth rate and doping level. High growth temperatures (>900°C) are generally desired for achieving epitaxial growth; however, gas phase depletion of the SiH4 source along the length of the reactor resulted in poor thickness uniformity. To improve the uniformity, the substrate was shifted closer to the gas inlet at higher temperatures (950°C) and the total flow of gas through the reactor was increased to 200 sccm. A series of n-type doping experiments were also carried out. Hall measurements indicated n-type behavior and four-point measurements yielded a change in resistivity based on the PH3/SiH4 ratio. Pre-coating sample preparation was determined to be important for achieving a high quality Si shell layer. Since Au can diffuse down the sides of the nanowire during sample cooldown after growth, the Au tips were etched away prior to shell layer deposition. The effect of deposition temperature on the structural properties of the shell layer deposited on the VLS grown SiNWs was investigated. TEM revealed that the n-type Si shells were polycrystalline at low temperatures (650°C) but were single crystal at 950°C. SiNW samples grown on glass were also coated; however, due to the temperature constraints, the maximum temperature used was 650°C and therefore the n-type Si shells were polycrystalline. (Abstract shortened by UMI.)

Hemodynamics-Driven Deposition of Intraluminal Thrombus in Abdominal Aortic Aneurysms

PubMed Central

Di Achille, P.; Tellides, G.; Humphrey, J.D.

2016-01-01

Accumulating evidence suggests that intraluminal thrombus plays many roles in the natural history of abdominal aortic aneurysms. There is, therefore, a pressing need for computational models that can describe and predict the initiation and progression of thrombus in aneurysms. In this paper, we introduce a phenomenological metric for thrombus deposition potential and use hemodynamic simulations based on medical images from six patients to identify best-fit values of the two key model parameters. We then introduce a shape optimization method to predict the associated radial growth of the thrombus into the lumen based on the expectation that thrombus initiation will create a thrombogenic surface, which in turn will promote growth until increasing hemodynamically induced frictional forces prevent any further cell or protein deposition. Comparisons between predicted and actual intraluminal thrombus in the six patient-specific aneurysms suggest that this phenomenological description provides a good first estimate of thrombus deposition. We submit further that, because the biologically active region of the thrombus appears to be confined to a thin luminal layer, predictions of morphology alone may be sufficient to inform fluid-solid-growth models of aneurysmal growth and remodeling. PMID:27569676

Interface coupling and growth rate measurements in multilayer Rayleigh-Taylor instabilities

NASA Astrophysics Data System (ADS)

Adkins, Raymond; Shelton, Emily M.; Renoult, Marie-Charlotte; Carles, Pierre; Rosenblatt, Charles

2017-06-01

Magnetic levitation was used to measure the growth rate Σ vs wave vector k of a Rayleigh-Taylor instability in a three-layer fluid system, a crucial step in the elucidation of interface coupling in finite-layer instabilities. For a three-layer (low-high-low density) system, the unstable mode growth rate decreases as both the height h of the middle layer and k are reduced, consistent with an interface coupling ∝e-k h . The ratios of the three-layer to the established two-layer growth rates are in good agreement with those of classic linear stability theory, which has long resisted verification in that configuration.

Outdiffusion of recombination centers from the substrate into LPE layers - GaAs

NASA Technical Reports Server (NTRS)

Jastrzebski, L.; Lagowski, J.; Gatos, H. C.

1979-01-01

Experimental results are presented showing that outdiffusion of recombination centers from the GaAs substrate into the epitaxial layer takes place during growth. Such outdiffusion decreases the carrier lifetime in the epitaxial layer to much lower values than the radiative recombination limit. Furthermore, it introduces a lifetime gradient across the epitaxial layer which depends critically on the growth velocity and thermal treatment. High rates of growth (such as those attainable in electroepitaxy) and high cooling rates can minimize the adverse effects of normally available substrates on the epitaxial layers; however, good quality substrates are essential for the consistent growth of device quality layers.

Heuristic urban transportation network design method, a multilayer coevolution approach

NASA Astrophysics Data System (ADS)

Ding, Rui; Ujang, Norsidah; Hamid, Hussain bin; Manan, Mohd Shahrudin Abd; Li, Rong; Wu, Jianjun

2017-08-01

The design of urban transportation networks plays a key role in the urban planning process, and the coevolution of urban networks has recently garnered significant attention in literature. However, most of these recent articles are based on networks that are essentially planar. In this research, we propose a heuristic multilayer urban network coevolution model with lower layer network and upper layer network that are associated with growth and stimulate one another. We first use the relative neighbourhood graph and the Gabriel graph to simulate the structure of rail and road networks, respectively. With simulation we find that when a specific number of nodes are added, the total travel cost ratio between an expanded network and the initial lower layer network has the lowest value. The cooperation strength Λ and the changeable parameter average operation speed ratio Θ show that transit users' route choices change dramatically through the coevolution process and that their decisions, in turn, affect the multilayer network structure. We also note that the simulated relation between the Gini coefficient of the betweenness centrality, Θ and Λ have an optimal point for network design. This research could inspire the analysis of urban network topology features and the assessment of urban growth trends.

Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

NASA Astrophysics Data System (ADS)

Turski, Henryk; Muzioł, Grzegorz; Siekacz, Marcin; Wolny, Pawel; Szkudlarek, Krzesimir; Feduniewicz-Żmuda, Anna; Dybko, Krzysztof; Skierbiszewski, Czeslaw

2018-01-01

Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped with Mg or Si, grown using different growth conditions were compared. In contrast to Si doped layers, no change in the Mg concentration was observed for layers grown using different growth rates for a constant Mg flux and constant growth temperature. This effect enables the growth of Ga(Al)N:Mg layers at higher growth rates, leading to shorter growth time and lower residual background doping, without the need of increasing Mg flux. Enhancement of Mg incorporation for Al containing layers was also observed. Change of Al content from 0% to 17% resulted in more than two times higher Mg concentration.

Towards Adaptive Grids for Atmospheric Boundary-Layer Simulations

NASA Astrophysics Data System (ADS)

van Hooft, J. Antoon; Popinet, Stéphane; van Heerwaarden, Chiel C.; van der Linden, Steven J. A.; de Roode, Stephan R.; van de Wiel, Bas J. H.

2018-02-01

We present a proof-of-concept for the adaptive mesh refinement method applied to atmospheric boundary-layer simulations. Such a method may form an attractive alternative to static grids for studies on atmospheric flows that have a high degree of scale separation in space and/or time. Examples include the diurnal cycle and a convective boundary layer capped by a strong inversion. For such cases, large-eddy simulations using regular grids often have to rely on a subgrid-scale closure for the most challenging regions in the spatial and/or temporal domain. Here we analyze a flow configuration that describes the growth and subsequent decay of a convective boundary layer using direct numerical simulation (DNS). We validate the obtained results and benchmark the performance of the adaptive solver against two runs using fixed regular grids. It appears that the adaptive-mesh algorithm is able to coarsen and refine the grid dynamically whilst maintaining an accurate solution. In particular, during the initial growth of the convective boundary layer a high resolution is required compared to the subsequent stage of decaying turbulence. More specifically, the number of grid cells varies by two orders of magnitude over the course of the simulation. For this specific DNS case, the adaptive solver was not yet more efficient than the more traditional solver that is dedicated to these types of flows. However, the overall analysis shows that the method has a clear potential for numerical investigations of the most challenging atmospheric cases.

Towards Adaptive Grids for Atmospheric Boundary-Layer Simulations

NASA Astrophysics Data System (ADS)

van Hooft, J. Antoon; Popinet, Stéphane; van Heerwaarden, Chiel C.; van der Linden, Steven J. A.; de Roode, Stephan R.; van de Wiel, Bas J. H.

2018-06-01

We present a proof-of-concept for the adaptive mesh refinement method applied to atmospheric boundary-layer simulations. Such a method may form an attractive alternative to static grids for studies on atmospheric flows that have a high degree of scale separation in space and/or time. Examples include the diurnal cycle and a convective boundary layer capped by a strong inversion. For such cases, large-eddy simulations using regular grids often have to rely on a subgrid-scale closure for the most challenging regions in the spatial and/or temporal domain. Here we analyze a flow configuration that describes the growth and subsequent decay of a convective boundary layer using direct numerical simulation (DNS). We validate the obtained results and benchmark the performance of the adaptive solver against two runs using fixed regular grids. It appears that the adaptive-mesh algorithm is able to coarsen and refine the grid dynamically whilst maintaining an accurate solution. In particular, during the initial growth of the convective boundary layer a high resolution is required compared to the subsequent stage of decaying turbulence. More specifically, the number of grid cells varies by two orders of magnitude over the course of the simulation. For this specific DNS case, the adaptive solver was not yet more efficient than the more traditional solver that is dedicated to these types of flows. However, the overall analysis shows that the method has a clear potential for numerical investigations of the most challenging atmospheric cases.

Plasma electrolytic oxidation of Titanium Aluminides

NASA Astrophysics Data System (ADS)

Morgenstern, R.; Sieber, M.; Grund, T.; Lampke, T.; Wielage, B.

2016-03-01

Due to their outstanding specific mechanical and high-temperature properties, titanium aluminides exhibit a high potential for lightweight components exposed to high temperatures. However, their application is limited through their low wear resistance and the increasing high-temperature oxidation starting from about 750 °C. By the use of oxide ceramic coatings, these constraints can be set aside and the possible applications of titanium aluminides can be extended. The plasma electrolytic oxidation (PEO) represents a process for the generation of oxide ceramic conversion coatings with high thickness. The current work aims at the clarification of different electrolyte components’ influences on the oxide layer evolution on alloy TNM-B1 (Ti43.5Al4Nb1Mo0.1B) and the creation of compact and wear resistant coatings. Model experiments were applied using a ramp-wise increase of the anodic potential in order to show the influence of electrolyte components on the discharge initiation and the early stage of the oxide layer growth. The production of PEO layers with technically relevant thicknesses close to 100 μm was conducted in alkaline electrolytes with varying amounts of Na2SiO3·5H2O and K4P2O7 under symmetrically pulsed current conditions. Coating properties were evaluated with regard to morphology, chemical composition, hardness and wear resistance. The addition of phosphates and silicates leads to an increasing substrate passivation and the growth of compact oxide layers with higher thicknesses. Optimal electrolyte compositions for maximum coating hardness and thickness were identified by statistical analysis. Under these conditions, a homogeneous inner layer with low porosity can be achieved. The frictional wear behavior of the compact coating layer is superior to a hard anodized layer on aluminum.

A new stylolite classification scheme to estimate compaction and local permeability variations

NASA Astrophysics Data System (ADS)

Koehn, D.; Rood, M. P.; Beaudoin, N.; Chung, P.; Bons, P. D.; Gomez-Rivas, E.

2016-12-01

We modeled the geometrical roughening of bedding-parallel, mainly layer-dominated stylolites in order to understand their structural evolution, to present an advanced classification of stylolite shapes and to relate this classification to chemical compaction and permeability variations at stylolites. Stylolites are rough dissolution seams that develop in sedimentary basins during chemical compaction. In the Zechstein 2 carbonate units, an important lean gas reservoir in the southern Permian Zechstein basin in Germany, stylolites influence local fluid flow, mineral replacement reactions and hence the permeability of the reservoir. Our simulations demonstrate that layer-dominated stylolites can grow in three distinct stages: an initial slow nucleation phase, a fast layer-pinning phase and a final freezing phase if the layer is completely dissolved during growth. Dissolution of the pinning layer and thus destruction of the stylolite's compaction tracking capabilities is a function of the background noise in the rock and the dissolution rate of the layer itself. Low background noise needs a slower dissolving layer for pinning to be successful but produces flatter teeth than higher background noise. We present an advanced classification based on our simulations and separate stylolites into four classes: (1) rectangular layer type, (2) seismogram pinning type, (3) suture/sharp peak type and (4) simple wave-like type. Rectangular layer type stylolites are the most appropriate for chemical compaction estimates because they grow linearly and record most of the actual compaction (up to 40 mm in the Zechstein example). Seismogram pinning type stylolites also provide good tracking capabilities, with the largest teeth tracking most of the compaction. Suture/sharp peak type stylolites grow in a non-linear fashion and thus do not record most of the actual compaction. However, when a non-linear growth law is used, the compaction estimates are similar to those making use of the rectangular layer type stylolites. Simple wave-like stylolites are not useful for compaction estimates, since their growth is highly non-linear with a very low growth exponent. In the case where sealing material is collected at the tooth during dissolution, stylolites can act as barriers for local fluid flow as they intensify sealing capabilities of pinning layers. However, the development of teeth and spikes offsets and thus destroys continuous stylolite seams so that the permeability across the stylolite becomes very heterogeneous and they are no continuous barriers. This behavior is best shown in rectangular layer and seismogram pinning type stylolites that develop efficient fluid barriers at teeth tips but destroy sealing capabilities of layers by offsetting them at the flank, leading to a permeability anisotropy along 2-D stylolite planes. Suture/sharp peak stylolites can create fluid barriers if they collect enough sealing material. However, if the collecting material does not seal or if spikes offset the sealing material the stylolite leaks. We propose that our classification can be used to realistically estimate chemical compaction in reservoirs and gives an indication on how heterogeneous the permeability of stylolites can be.

Growth of High-Density Zinc Oxide Nanorods on Porous Silicon by Thermal Evaporation

PubMed Central

Rusli, Nurul Izni; Tanikawa, Masahiro; Mahmood, Mohamad Rusop; Yasui, Kanji; Hashim, Abdul Manaf

2012-01-01

The formation of high-density zinc oxide (ZnO) nanorods on porous silicon (PS) substrates at growth temperatures of 600–1000 °C by a simple thermal evaporation of zinc (Zn) powder in the presence of oxygen (O2) gas was systematically investigated. The high-density growth of ZnO nanorods with (0002) orientation over a large area was attributed to the rough surface of PS, which provides appropriate planes to promote deposition of Zn or ZnOx seeds as nucleation sites for the subsequent growth of ZnO nanorods. The geometrical morphologies of ZnO nanorods are determined by the ZnOx seed structures, i.e., cluster or layer structures. The flower-like hexagonal-faceted ZnO nanorods grown at 600 °C seem to be generated from the sparsely distributed ZnOx nanoclusters. Vertically aligned hexagonal-faceted ZnO nanorods grown at 800 °C may be inferred from the formation of dense arrays of ZnOx clusters. The formation of disordered ZnO nanorods formed at 1000 °C may due to the formation of a ZnOx seed layer. The growth mechanism involved has been described by a combination of self-catalyzed vapor-liquid-solid (VLS) and vapor-solid (VS) mechanism. The results suggest that for a more precise study on the growth of ZnO nanostructures involving the introduction of seeds, the initial seed structures must be taken into account given their significant effects.

Interaction of metal layers with polycrystalline Si

NASA Technical Reports Server (NTRS)

Nakamura, K.; Olowolafe, J. O.; Lau, S. S.; Nicolet, M.-A.; Mayer, J. W.; Shima, R.

1976-01-01

Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

A combined scanning tunneling microscope-atomic layer deposition tool.

PubMed

Mack, James F; Van Stockum, Philip B; Iwadate, Hitoshi; Prinz, Fritz B

2011-12-01

We have built a combined scanning tunneling microscope-atomic layer deposition (STM-ALD) tool that performs in situ imaging of deposition. It operates from room temperature up to 200 °C, and at pressures from 1 × 10(-6) Torr to 1 × 10(-2) Torr. The STM-ALD system has a complete passive vibration isolation system that counteracts both seismic and acoustic excitations. The instrument can be used as an observation tool to monitor the initial growth phases of ALD in situ, as well as a nanofabrication tool by applying an electric field with the tip to laterally pattern deposition. In this paper, we describe the design of the tool and demonstrate its capability for atomic resolution STM imaging, atomic layer deposition, and the combination of the two techniques for in situ characterization of deposition.

Direct Measurement of Initial 230TH/ 232TH Ratios in Central Texas Speleothems for More Accurate Age Determination

NASA Astrophysics Data System (ADS)

Wortham, B. E.; Banner, J. L.; James, E.; Loewy, S. L.

2013-12-01

Speleothems, calcite deposits in caves, preserve a record of climate in their growth rate, isotope ratios and trace element concentrations. These variables must be tied to precise ages to produce pre-instrumental records of climate. The 238U-234U- 230Th disequilibrium method of dating can yield precise ages if the amount of 230Th from the decay of radiogenic 238U can be constrained. 230Th in a speleothem calcite growth layer has two potential sources - 1) decay of radioactive 238U since the time of growth of the calcite layer; and 2) initial detrital 230Th, incorporated along with detrital 232Th, into the calcite layer at the time it grew. Although the calcite lattice does not typically incorporate Th, samples can contain impurities with relatively high Th contents. Initial 230Th/232Th is commonly estimated by assuming a source with bulk-Earth U/Th values in a state of secular equilibrium in the 238U-decay chain. The uncertainty in this 230Th/232Th estimate is also assumed, typically at +/-100%. Both assumptions contribute to uncertainty in ages determined for young speleothems. If the amount of initial detrital 230Th can be better quantified for samples or sites, then U-series ages will have smaller uncertainties and more precisely define the time series of climate proxies. This study determined the initial 230Th/232Th of modern calcite to provide more precise dates for central Texas speleothems. Calcite was grown on glass-plate substrates placed under active drips in central Texas caves. The 230Th/232Th of this modern calcite was determined using thermal ionization mass spectrometry. Results show that: 1) initial 230Th/232Th ratios can be accurately determined in these young samples and 2) measuring 230Th/232Th reduces the uncertainties in previously-determined ages on stalagmites from under the same drips. For example, measured initial 230Th/232Th in calcite collected on substrates from different locations in the cave at Westcave Preserve are 15.3 × 0.67 ppm, 14.6 × 0.83 ppm, 5.8 × 0.56 ppm, and 5.9 × 0.60 ppm, which are higher and more precise than the value commonly assumed for initial 230Th/232Th, 4.4 × 4.4 ppm. Soil sampled above Westcave, a potential source of detrital Th incorporated into speleothems, also has a high calculated 230Th/232Th. We calculate soil 230Th/232Th from measured U and Th concentrations of soil leachates (using DI water and ammonium acetate). Calculated 230Th/232Th for Westcave soils range from 0.39 to 28.4 ppm, which encompasses the range of initial 230Th/232Th values found in the modern calcite. Soil leachates from Natural Bridge Caverns and Inner Space Cavern were analyzed by the same method, yielding calculated 230Th/232Th ranging from 1.5 to 12.6 ppm (Natural Bridge), and from 1.43 to 272 ppm (Inner Space). Soil and calcite data indicate that the commonly assumed initial 230Th/232Th is not always applicable and that initial 230Th/232Th can be estimated more accurately by measuring Th isotope ratios in modern calcite and soils to determine speleothem U-series ages.

Conditions Determining Initiation of DNA Synthesis in 3T3 Cells*

PubMed Central

Dulbecco, R.; Stoker, M. G. P.

1970-01-01

Experiments were designed to discriminate between inhibition of growth due to contacts or exhaustion of serum factors. The cell layer was wounded and the migrating cells were followed by time-lapse cinematography; DNA synthesis in the same cells was recognized by means of 3H-thymidine labeling and radioautography. In this way, the complete history of individual cells migrating to the wound could be described. The results show that topographical relationships between cells play an important role in controlling initiation of DNA synthesis. It is still unclear whether initiation is promoted by release from contacts or by the increased ability of the cells to utilize serum factors because of their changes in shapes and activities. PMID:5273897

The initial-value problem for viscous channel flows

NASA Technical Reports Server (NTRS)

Criminale, W. O.; Jackson, T. L.; Lasseigne, D. G.

1995-01-01

Plane viscous channel flows are perturbed and the ensuing initial-value problems are investigated in detail. Unlike traditional methods where traveling wave normal modes are assumed for solution, this works offers a means whereby completely arbitrary initial input can be specified without having to resort to eigenfunction expansions. The full temporal behavior, including both early time transients and the long time asymptotics, can be determined for any initial disturbance. Effects of three-dimensionality can be assessed. The bases for the analysis are: (a) linearization of the governing equations; (b) Fourier decomposition in the spanwise and streamwise directions of the flow; and (c) direct numerical integration of the resulting partial differential equations. All of the stability data that are known for such flows can be reproduced. Also, the optimal initial condition can be determined in a straight forward manner and such optimal conditions clearly reflect transient growth data that is easily determined by a rational choice of a basis for the initial conditions. Although there can be significant transient growth for subcritical values of the Reynolds number using this approach it does not appear possible that arbitrary initial conditions will lead to the exceptionally large transient amplitudes that have been determined by optimization of normal modes. The approach is general and can be applied to other classes of problems where only a finite discrete spectrum exists, such as the boundary layer for example.

Large-scale fabrication of vertically aligned ZnO nanowire arrays

DOEpatents

Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

2013-02-05

In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

[Effects of water storage in deeper soil layers on the root growth, root distribution and economic yield of cotton in arid area with drip irrigation under mulch].

PubMed

Luo, Hong-Hai; Zhang, Hong-Zhi; Zhang, Ya-Li; Zhang, Wang-Feng

2012-02-01

Taking cotton cultivar Xinluzao 13 as test material, a soil column culture expenment was conducted to study the effects of water storage in deeper (> 60 cm) soil layer on the root growth and its relations with the aboveground growth of the cultivar in arid area with drip irrigation under mulch. Two levels of water storage in 60-120 cm soil layer were installed, i. e., well-watered and no watering, and for each, the moisture content in 0-40 cm soil layer during growth period was controlled at two levels, i.e., 70% and 55% of field capacity. It was observed that the total root mass density of the cultivar and its root length density and root activity in 40-120 cm soil layer had significant positive correlations with the aboveground dry mass. When the moisture content in 0-40 cm soil layer during growth season was controlled at 70% of field capacity, the total root mass density under well-watered and no watering had less difference, but the root length density and root activity in 40-120 cm soil layer under well-watered condition increased, which enhanced the water consumption in deeper soil layer, increased the aboveground dry mass, and finally, led to an increased economic yield and higher water use efficiency. When the moisture content in 0-40 cm soil layer during growth season was controlled at 55% of field capacity and the deeper soil layer was well-watered, the root/shoot ratio and root length density in 40-120 cm soil layer and the root activity in 80-120 cm soil layer were higher, the water consumption in deeper soil layer increased, but it was still failed to adequately compensate for the negative effects of water deficit during growth season on the impaired growth of roots and aboveground parts, leading to a significant decrease in the economic yield, as compared with that at 70% of field capacity. Overall, sufficient water storage in deeper soil layer and a sustained soil moisture level of 65% -75% of field capacity during growth period could promote the downward growth of cotton roots, which was essential for achieving water-saving and high-yielding cultivation of cotton with drip irrigation under mulch.

Turbulence in Supercritical O2/H2 and C7H16/N2 Mixing Layers

NASA Technical Reports Server (NTRS)

Bellan, Josette; Harstad, Kenneth; Okong'o, Nora

2003-01-01

This report presents a study of numerical simulations of mixing layers developing between opposing flows of paired fluids under supercritical conditions, the purpose of the study being to elucidate chemical-species-specific aspects of turbulence. The simulations were performed for two different fluid pairs O2/H2 and C7H16/N2 at similar reduced initial pressures (reduced pressure is defined as pressure divided by critical pressure). Thermodynamically, O2/H2 behaves more nearly like an ideal mixture and has greater solubility, relative to C7H16/N2, which departs strongly from ideality. Because of a specified smaller initial density stratification, the C7H16/N2 layers exhibited greater levels of growth, global molecular mixing, and turbulence. However, smaller density gradients at the transitional state for the O2/H2 system were interpreted as indicating that locally, this system exhibits enhanced mixing as a consequence of its greater solubility and closer approach to ideality. These thermodynamic features were shown to affect entropy dissipation, which was found to be larger for O2/H2 and concentrated in high-density-gradient-magnitude regions that are distortions of the initial density-stratification boundary. In C7H16/N2, the regions of largest dissipation were found to lie in high-density-gradient-magnitude regions that result from mixing of the two fluids.

Study of the Reynolds Number Effect on the Process of Instability Transition Into the Turbulent Stage.

PubMed

Nevmerzhitskiy, N V; Sotskov, E A; Sen'kovskiy, E D; Krivonos, O L; Polovnikov, A A; Levkina, E V; Frolov, S V; Abakumov, S A; Marmyshev, V V

2014-09-01

The results of the experimental study of the Reynolds number effect on the process of the Rayleigh-Taylor (R-T) instability transition into the turbulent stage are presented. The experimental liquid layer was accelerated by compressed gas. Solid particles were scattered on the layer free surface to specify the initial perturbations in some experiments. The process was recorded with the use of a high-speed motion picture camera. The following results were obtained in experiments: (1) Long-wave perturbation is developed at the interface at the Reynolds numbers Re < 10 4 . If such perturbation growth is limited by a hard wall, the jet directed in gas is developed. If there is no such limitation, this perturbation is resolved into the short-wave ones with time, and their growth results in gas-liquid mixing. (2) Short-wave perturbations specified at the interface significantly reduce the Reynolds number Re for instability to pass into the turbulent mixing stage.

Metal carboxylate formation during indoor atmospheric corrosion of Cu, Zn, and Ni

DOE Office of Scientific and Technical Information (OSTI.GOV)

Persson, D.; Leygraf, C.

Chemical analyses of surface films and corrosion products formed on pure Cu, Zn, Ni, and Ag samples exposed up to 12 months in various mild indoor environments have been performed by infrared reflection-absorption spectroscopy (IRAS) and X-ray photoelectron spectroscopy. The analyses reveal metal carboxylates to be the main ingredients on the surface of Cu, Zn, and Ni. Other ions, such as sulfate, chloride, nitrate, and ammonium ions are also present but in smaller amounts.The surface region on Ag contains mainly silver sulfide with smaller amounts of sulfate, ammonium, and chloride ions. The growth of the carboxylate layers, as followed bymore » IRAS, exhibits an initial film formation with a thickness of a few nanometers for all exposure sites investigated. Subsequent growth to thicker layers was observed at sites with higher humidity levels. The unexpectedly high content of metal carboxylates found on Cu, Zn, and Ni may provide insight into possible processes involved in the atmospheric indoor corrosion of these metals.« less

Growth rate dependence of boron incorporation into BxGa1-xAs layers

NASA Astrophysics Data System (ADS)

Detz, H.; MacFarland, D.; Zederbauer, T.; Lancaster, S.; Andrews, A. M.; Schrenk, W.; Strasser, G.

2017-11-01

This work provides a comprehensive study of the incorporation behavior of B in growing GaAs under molecular beam epitaxy conditions. Structural characterization of superlattices revealed a strong dependence of the BAs growth rate on the GaAs growth rate used. In general, higher GaAs growth rates lead to a higher apparent BAs growth rate, although lower B cell temperatures showed saturation behavior. Each B cell temperature requires a minimum GaAs growth rate for producing smooth films. The B incorporation into single thick layers was found to be reduced to 75-80% compared to superlattice structures. The p-type carrier densities in 1000 nm thick layers were found to be indirectly proportional to the B content. Furthermore, 500 nm thick BxGa1-xAs layers showed significantly lower carrier concentrations, indicating B segregation on the surface during growth of thicker layers.

Solid State Research, 1980:4

DTIC Science & Technology

1980-10-31

and is initiated at the periphery of the de- vice at opening in the SijNj layer. Rate measurement* of thi* prove** made on the GKOUSS imager using...dimensions, single-mode opera- tion can be obtained. There is a stripe opening in the oxide film running parallel to the etched rib, which can be...seen in cross section in Fig. I-l(a). This stripe opening is the nucleation region for the epitaxial growth. Other oxide-confined waveguide

The kinetics of dolomite reaction rim growth under isostatic and non-isostatic pressure conditions

NASA Astrophysics Data System (ADS)

Helpa, V.; Rybacki, E.; Morales, L. G.; Abart, R.; Dresen, G. H.

2013-12-01

During burial and exhumation, rocks are simultaneously exposed to metamorphic reactions and tectonic stresses. Therefore, the reaction rate of newly formed minerals may depend on chemical and mechanical driving forces. Here, we investigate the reaction kinetics of dolomite (CaMg[CO3]2) rim growth by solid-state reactions experiments on oriented calcite (CaCO3) and magnesite (MgCO3) single crystals under isostatic and non-isostatic pressure conditions. Cylindrical samples of 3-5 mm length and 7 mm diameter were drilled and polished perpendicular to the rhombohedral cleavage planes of natural clear crystals. The tests were performed using a Paterson-type deformation apparatus at P = 400 MPa confining pressure, temperatures, T, between 750 and 850°C, and reaction durations, t, of 2 - 146 h to calculate the kinetic parameters of dolomite rim growth under isostatic stress conditions. For non-isostatic reaction experiments we applied in addition differential stresses, σ, up to 40 MPa perpendicular to the contact interface at T = 750°C for 4 - 171 h duration, initiating minor inelastic deformation of calcite. The thickness of the resulting dolomite reaction rims increases linearly with the square root of time, indicating a diffusion-controlled reaction. The rims consist of two different textural domains. Granular dolomite grains (≈ 2 -5 μm grain size) form next to calcite and elongated palisade-shaped grains (1-6 μm diameter) grow perpendicular to the magnesite interface. Texture measurements with the electron backscatter diffraction technique indicate that the orientations of dolomite grains are mainly influenced by the orientation of the calcite educt crystal, in particular in the granular rim. To some extent, the texture of dolomite palisades is also influenced by the orientation of magnesite. The thickness of the two individual layers increases with temperature. At 400 MPa isostatic pressure, T = 750°C and t = 29 hours, a 5 μm thick granular dolomite layer and a 7 μm thick palisade-shaped layer evolve. At similar conditions and a differential stress of 30 MPa, the rim thickness remains similar; consequently the effect of non-isostatic stress on dolomite rim growth is negligible. Platinum markers show that the initial calcite-magnesite interface is located between granular and palisade-forming dolomite, indicating that rim growth occurs by counter diffusion of MgO and CaO. Diffusion of MgO across the dolomite reaction rim into calcite forms additionally magnesio-calcite grains with diameters of ≈ 13 - 46 μm, depending on the experimental conditions and increasing with increasing distance to the dolomite boundary. At T = 750°C, t = 29 hours, the thickness of the magnesio-calcite layer is 32 μm (isostatic) - 35 μm (σ = 30 MPa). The experiments indicate that solid-state reaction rim growth of dolomite between calcite and magnesite is primarily controlled by diffusion of MgO and CaO, forming layers with different microstructures during growth into the educt phases. The kinetics of the reaction in the carbonate system are not significantly changed by differential stresses up to 40 MPa. We suggest that volume diffusion is the dominant transport mechanism, which is presumably less affected by non-isostatic stresses than grain boundary diffusion.

Microstructure and growth mechanism of Al{sub 2}O{sub 3}/Al ceramic matrix composite made by directed oxidation of Al alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin, C.D.; Lai, M.O.; Cotterell, B.

Since the Lanxide process was advanced for forming of Al{sub 2}O{sub 3} ceramic composite by directed oxidation of Al alloys, much work has been done with various mechanisms being proposed. The mechanisms have claimed that only certain dopants are essential to the growth process. Nevertheless, no united consensus has yet been reached. In the present work, Al alloy containing 5% Mg was oxidized in air for 12 hours at 1,150 C with or without surface dopants of MgO or Pd. The resultant composites showed very different microstructures. Without any surface doping, the alloy did not develop any portion of compositemore » as the initial intimate oxide film stops further oxidation. This intimate oxide film can either be broken off by mechanical means or penetrated by reaction with surface dopants, so that the composite can grow and develop. The results show that the previously reported incubation time is not only related to reaction processes but also to the initial mechanical disturbances. Doping with Pd made the composite darker in color as the grains of the alumina ceramic matrix and inclusions of Al metal are finer. This shows that Pd may make the top oxide layer less intimate, and more nucleation sites are therefore available for oxidation. A new model is presented for oxide sustained growth based on the existence of oxygen active top surface layer and the capillary flow of molten metal around ceramic phase.« less

Diffusion and interface evolution during the atomic layer deposition of TiO{sub 2} on GaAs(100) and InAs(100) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Liwang; Gougousi, Theodosia, E-mail: gougousi@umbc.edu

2016-01-15

Atomic layer deposition is used to form TiO{sub 2} films from tetrakis dimethyl amino titanium and H{sub 2}O on native oxide GaAs(100) and InAs(100) surfaces. The evolution of the film/substrate interface is examined as a function of the deposition temperature (100–325 °C) using ex situ x-ray photoelectron spectroscopy. An increase in the deposition temperature up to 250 °C leads to enhancement of the native oxide removal. For depositions at 300 °C and above, interface reoxidation is observed during the initial deposition cycles but when the films are thicker than 3 nm, the surface oxides are removed steadily. Based on these observations, two distinct filmmore » growth regimes are identified; up to 250 °C, layer-by-layer dominates while at higher temperatures island growth takes over. Angle resolved x-ray photoelectron spectroscopy measurements performed on 3 nm TiO{sub 2} film deposited at 325 °C on both surfaces demonstrates a very important difference between the two substrates: for GaAs the native oxides remaining in the stack are localized at the interface, while for InAs(100), the indium oxides are mixed in the TiO{sub 2} film.« less

Sulfidation of 310 stainless steel at sulfur potentials encountered in coal conversion systems

NASA Technical Reports Server (NTRS)

Rao, D. B.; Nelson, H. G.

1976-01-01

The sulfidation of SAE 310 stainless steel was carried out in gas mixtures of hydrogen and hydrogen sulfide over a range of sulfur potentials anticipated in advanced coal gasification processes. The kinetics, composition, and morphology of sulfide scale formation were studied at a fixed temperature of 1,065 K over a range of sulfur potentials from .00015 Nm to the -2nd power to 900 Nm to the -2nd power. At all sulfur potentials investigated, the sulfide scales were found to be multilayered. The relative thickness of the individual layers as well as the composition was found to depend on the sulfur potential. The reaction was found to obey the parabolic rate law after an initial transient period. Considerably longer transient periods were found to be due to unsteady state conditions resulting from compositional variations in the spinel layer. The sulfur pressure dependence on the parabolic rate constant was found to best fit the equation K sub p equals const. (P sub S2) to the 1/nth power, where n equals 3.7. The growth of the outer layers was found to be primarily due to the diffusion of metal ions, iron being the predominant species. The inner layer growth was due to the dissociation of the primary product at the alloy scale interface and depended on the activity of chromium.

On the instability of hypersonic flow past a flat plate

NASA Technical Reports Server (NTRS)

Blackaby, Nicholas; Cowley, Stephen; Hall, Philip

1990-01-01

The instability of hypersonic boundary-layer flows over flat plates is considered. The viscosity of the fluid is taken to be governed by Sutherland's law, which gives a much more accurate representation of the temperature dependence of fluid viscosity at hypersonic speeds than Chapman's approximate linear law; although at lower speeds the temperature variation of the mean state is less pronounced so that the Chapman law can be used with some confidence. Attention is focussed on the so-called (vorticity) mode of instability of the viscous hypersonic boundary layer. This is thought to be the fastest growing inviscid disturbance at hypersonic speeds; it is also believed to have an asymptotically larger growth rate than any viscous or centrifugal instability. As a starting point the instability of the hypersonic boundary layer which exists far downstream from the leading edge of the plate is investigated. In this regime the shock that is attached to the leading edge of the plate plays no role, so that the basic boundary layer is non-interactive. It is shown that the vorticity mode of instability of this flow operates on a significantly different lengthscale than that obtained if a Chapman viscosity law is assumed. In particular, it is found that the growth rate predicted by a linear viscosity law overestimates the size of the growth rate by O(M(exp 2). Next, the development of the vorticity mode as the wavenumber decreases is described, and it is shown that acoustic modes emerge when the wavenumber has decreased from it's O(1) initial value to O(M (exp -3/2). Finally, the inviscid instability of the boundary layer near the leading edge in the interaction zone is discussed and particular attention is focussed on the strong interaction region which occurs sufficiently close to the leading edge. It is found that the vorticity mode in this regime is again unstable, and that it is concentrated in the transition layer at the edge of the boundary layer where the temperature adjusts from its large, O(M(exp 2), value in the viscous boundary layer, to its O(1) free stream value. The existence of the shock indirectly, but significantly, influences the instability problem by modifying the basic flow structure in this layer.

How do bubbles grow in a weakly supersaturated solution?

NASA Astrophysics Data System (ADS)

Enriquez, Oscar; Sun, Chao; Lohse, Detlef; Prosperetti, Andrea; van der Meer, Devaraj

2013-11-01

Beer, champagne and soft-drinks are water-based solutions which owe their ``bubbliness'' to a moderate degree of carbon dioxide supersaturation. Bubbles grow sequentially from nucleation sites due to solute concentration gradients and detach due to buoyancy. The leading mass transfer mechanism is diffusion, but the advection caused by the moving surface also plays an important role. Now, what happens at the limit of very weak supersaturation? We take an experimental look at CO2 bubbles growing in water under such a condition. Nucleation sites are provided by hydrophobic micro-cavities on a silicon chip, therefore controlling the number and position of bubbles. Although advection is negligible, measured growth rates for an isolated bubble differ noticeably from a purely diffusive theoretical solution. We can explain the differences as effects of the concentration boundary layer around the bubble. Initially, its interaction with the surface on which the bubble grows slows the process down. Later on, the growth rate is enhanced by buoyancy effects caused by the depletion of the solute in the surroundings of the bubble. When neighboring bubbles are brought into play they interact through their boundary layers, further slowing down their growth rates.

Direct simulation Monte Carlo investigation of the Rayleigh-Taylor instability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallis, M. A.; Koehler, T. P.; Torczynski, J. R.

In this paper, the Rayleigh-Taylor instability (RTI) is investigated using the direct simulation Monte Carlo (DSMC) method of molecular gas dynamics. Here, fully resolved two-dimensional DSMC RTI simulations are performed to quantify the growth of flat and single-mode perturbed interfaces between two atmospheric-pressure monatomic gases as a function of the Atwood number and the gravitational acceleration. The DSMC simulations reproduce many qualitative features of the growth of the mixing layer and are in reasonable quantitative agreement with theoretical and empirical models in the linear, nonlinear, and self-similar regimes. In some of the simulations at late times, the instability enters themore » self-similar regime, in agreement with experimental observations. Finally, for the conditions simulated, diffusion can influence the initial instability growth significantly.« less

Nanostructure control: Nucleation and diffusion studies for predictable ultra thin film morphologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hershberger, Matthew

This thesis covers PhD research on two systems with unique and interesting physics. The first system is lead (Pb) deposited on the silicon (111) surface with the 7x7 reconstruction. Pb and Si are mutually bulk insoluble resulting in this system being an ideal case for studying metal and semiconductor interactions. Initial Pb deposition causes an amorphous wetting layer to form across to surface. Continued deposition results in Pb(111) island growth. Classic literature has classified this system as the Stranski-Krastanov growth mode although the system is not near equilibrium conditions. Our research shows a growth mode distinctly different than classical expectationsmore » and begins a discussion of reclassifying diffusion and nucleation for systems far away from the well-studied equilibrium cases.« less

Direct simulation Monte Carlo investigation of the Rayleigh-Taylor instability

DOE PAGES

Gallis, M. A.; Koehler, T. P.; Torczynski, J. R.; ...

2016-08-31

In this paper, the Rayleigh-Taylor instability (RTI) is investigated using the direct simulation Monte Carlo (DSMC) method of molecular gas dynamics. Here, fully resolved two-dimensional DSMC RTI simulations are performed to quantify the growth of flat and single-mode perturbed interfaces between two atmospheric-pressure monatomic gases as a function of the Atwood number and the gravitational acceleration. The DSMC simulations reproduce many qualitative features of the growth of the mixing layer and are in reasonable quantitative agreement with theoretical and empirical models in the linear, nonlinear, and self-similar regimes. In some of the simulations at late times, the instability enters themore » self-similar regime, in agreement with experimental observations. Finally, for the conditions simulated, diffusion can influence the initial instability growth significantly.« less

Method of growing GaN films with a low density of structural defects using an interlayer

DOEpatents

Bourret-Courchesne, Edith D.

2003-01-01

A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, Himanshu; Ganguli, Tapas; Deb, S. K.

The in-situ growth of CuO nanowires was studied by Energy Dispersive X-ray Diffraction (EDXRD) to observe the mechanism of growth. The study was carried out for comparison at two temperatures—at 500 °C, the optimum temperature of the nanowires growth, and at 300 °C just below the temperature range of the growth. The in situ observation revealed the successive oxidation of Cu foil to Cu{sub 2}O layer and finally to CuO layer. Further analysis showed the presence of a compressive stress in CuO layer due to interface at CuO and Cu{sub 2}O layers. The compressive stress was found to increase withmore » the growth of the nanowires at 500 °C while it relaxed with the growth of CuO layer at 300 °C. The present results do not support the existing model of stress relaxation induced growth of nanowires. Based on the detailed Transmission Electron Microscope, Scanning Electron Microscope, and EDXRD results, a microstructure based growth model has been suggested.« less

Kinetic Simulations of the Lowest-order Unstable Mode of Relativistic Magnetostatic Equilibria

NASA Astrophysics Data System (ADS)

Nalewajko, Krzysztof; Zrake, Jonathan; Yuan, Yajie; East, William E.; Blandford, Roger D.

2016-08-01

We present the results of particle-in-cell numerical pair plasma simulations of relativistic two-dimensional magnetostatic equilibria known as the “Arnold-Beltrami-Childress” fields. In particular, we focus on the lowest-order unstable configuration consisting of two minima and two maxima of the magnetic vector potential. Breaking of the initial symmetry leads to exponential growth of the electric energy and to the formation of two current layers, which is consistent with the picture of “X-point collapse” first described by Syrovatskii. Magnetic reconnection within the layers heats a fraction of particles to very high energies. After the saturation of the linear instability, the current layers are disrupted and the system evolves chaotically, diffusing the particle energies in a stochastic second-order Fermi process, leading to the formation of power-law energy distributions. The power-law slopes harden with the increasing mean magnetization, but they are significantly softer than those produced in simulations initiated from Harris-type layers. The maximum particle energy is proportional to the mean magnetization, which is attributed partly to the increase of the effective electric field and partly to the increase of the acceleration timescale. We describe in detail the evolving structure of the dynamical current layers and report on the conservation of magnetic helicity. These results can be applied to highly magnetized astrophysical environments, where ideal plasma instabilities trigger rapid magnetic dissipation with efficient particle acceleration and flares of high-energy radiation.

KINETIC SIMULATIONS OF THE LOWEST-ORDER UNSTABLE MODE OF RELATIVISTIC MAGNETOSTATIC EQUILIBRIA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nalewajko, Krzysztof; Zrake, Jonathan; Yuan, Yajie

2016-08-01

We present the results of particle-in-cell numerical pair plasma simulations of relativistic two-dimensional magnetostatic equilibria known as the “Arnold–Beltrami–Childress” fields. In particular, we focus on the lowest-order unstable configuration consisting of two minima and two maxima of the magnetic vector potential. Breaking of the initial symmetry leads to exponential growth of the electric energy and to the formation of two current layers, which is consistent with the picture of “X-point collapse” first described by Syrovatskii. Magnetic reconnection within the layers heats a fraction of particles to very high energies. After the saturation of the linear instability, the current layers aremore » disrupted and the system evolves chaotically, diffusing the particle energies in a stochastic second-order Fermi process, leading to the formation of power-law energy distributions. The power-law slopes harden with the increasing mean magnetization, but they are significantly softer than those produced in simulations initiated from Harris-type layers. The maximum particle energy is proportional to the mean magnetization, which is attributed partly to the increase of the effective electric field and partly to the increase of the acceleration timescale. We describe in detail the evolving structure of the dynamical current layers and report on the conservation of magnetic helicity. These results can be applied to highly magnetized astrophysical environments, where ideal plasma instabilities trigger rapid magnetic dissipation with efficient particle acceleration and flares of high-energy radiation.« less

Delivery of doxorubicin and paclitaxel from double-layered microparticles: The effects of layer thickness and dual-drug vs. single-drug loading.

PubMed

Lee, Wei Li; Guo, Wei Mei; Ho, Vincent H B; Saha, Amitaksha; Chong, Han Chung; Tan, Nguan Soon; Tan, Ern Yu; Loo, Say Chye Joachim

2015-11-01

Double-layered microparticles composed of poly(d,l-lactic-co-glycolic acid, 50:50) (PLGA) and poly(l-lactic acid) (PLLA) were loaded with doxorubicin HCl (DOX) and paclitaxel (PCTX) through a solvent evaporation technique. DOX was localized in the PLGA shell, while PCTX was localized in the PLLA core. The aim of this study was to investigate how altering layer thickness of dual-drug, double-layered microparticles can influence drug release kinetics and their antitumor capabilities, and against single-drug microparticles. PCTX-loaded double-layered microparticles with denser shells retarded the initial release of PCTX, as compared with dual-drug-loaded microparticles. The DOX release from both DOX-loaded and dual-drug-loaded microparticles were observed to be similar with an initial burst. Through specific tailoring of layer thicknesses, a suppressed initial burst of DOX and a sustained co-delivery of two drugs can be achieved over 2months. Viability studies using spheroids of MCF-7 cells showed that controlled co-delivery of PCTX and DOX from dual-drug-loaded double-layered microparticles were better in reducing spheroid growth rate. This study provides mechanistic insights into how by tuning the layer thickness of double-layered microparticles the release kinetics of two drugs can be controlled, and how co-delivery can potentially achieve better anticancer effects. While the release of multiple drugs has been reported to achieve successful apoptosis and minimize drug resistance, most conventional particulate systems can only deliver a single drug at a time. Recently, although a number of formulations (e.g. micellar nanoparticles, liposomes) have been successful in delivering two or more anticancer agents, sustained co-delivery of these agents remains inadequate due to the complex agent loading processes and rapid release of hydrophilic agents. Therefore, the present work reports the multilayered particulate system that simultaneously hosts different drugs, while being able to tune their individual release over months. We believe that our findings would be of interest to the readers of Acta Biomaterialia because the proposed system could open a new avenue on how two drugs can be released, through rate-controlling carriers, for combination chemotherapy. Copyright © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Growth of modern branched columnar stromatolites in Lake Joyce, Antarctica.

PubMed

Mackey, T J; Sumner, D Y; Hawes, I; Jungblut, A D; Andersen, D T

2015-07-01

Modern decimeter-scale columnar stromatolites from Lake Joyce, Antarctica, show a change in branching pattern during a period of lake level rise. Branching patterns correspond to a change in cyanobacterial community composition as preserved in authigenic calcite crystals. The transition in stromatolite morphology is preserved by mineralized layers that contain microfossils and cylindrical molds of cyanobacterial filaments. The molds are composed of two populations with different diameters. Large diameter molds (>2.8 μm) are abundant in calcite forming the oldest stromatolite layers, but are absent from younger layers. In contrast, <2.3 μm diameter molds are common in all stromatolites layers. Loss of large diameter molds corresponds to the transition from smooth-sided stromatolitic columns to branched and irregular columns. Mold diameters are similar to trichome diameters of the four most abundant living cyanobacteria morphotypes in Lake Joyce: Phormidium autumnale morphotypes have trichome diameters >3.5 μm, whereas Leptolyngbya antarctica, L. fragilis, and Pseudanabaena frigida morphotypes have diameters <2.3 μm. P. autumnale morphotypes were only common in mats at <12 m depth. Mats containing abundant P. autumnale morphotypes were smooth, whereas mats with few P. autumnale morphotypes contained small peaks and protruding bundles of filaments, suggesting that the absence of P. autumnale morphotypes allowed small-scale topography to develop on mats. Comparisons of living filaments and mold diameters suggest that P. autumnale morphotypes were present early in stromatolite growth, but disappeared from the community through time. We hypothesize that the mat-smoothing behavior of P. autumnale morphotypes inhibited nucleation of stromatolite branches. When P. autumnale morphotypes were excluded from the community, potentially reflecting a rise in lake level, short-wavelength roughness provided nuclei for stromatolite branches. This growth history provides a conceptual model for initiation of branched stromatolite growth resulting from a change in microbial community composition. © 2015 John Wiley & Sons Ltd.

Authigenic Carbonate Fans from Lower Jurassic Marine Shales (Alberta, Canada)

NASA Astrophysics Data System (ADS)

Martindale, R. C.; Them, T. R., II; Gill, B. C.; Knoll, A. H.

2016-12-01

Authigenic aragonite seafloor fans are a common occurrence in Archean and Paleoproterozoic carbonates, as well as Neoproterozoic cap carbonates. Similar carbonate fans are rare in Phanerozoic strata, with the exception of two mass extinction events; during the Permo-Triassic and Triassic-Jurassic boundaries, carbonate fans formed at the sediment-water interface and within the sediment, respectively. These crystal fans have been linked to carbon cycle perturbations at the end of the Permian and Triassic periods driven by rapid flood volcanism. The Early Jurassic Toarcian Ocean Anoxic Event (T-OAE) is also correlated with the emplacement of a large igneous province, but biological consequences were more modest. We have identified broadly comparable fibrous calcite layers (2-10 cm thick) in Pliensbachian-Toarcian cores from Alberta, Canada. This work focuses on the geochemical and petrographic description of these fans and surrounding sediment in the context of the T-OAE. At the macroscale, carbonates exhibit a fan-like (occasionally cone-in-cone) structure and displace the sediment around them as they grew. At the microscale, the carbonate crystals (pseudomorphs of aragonite) often initiate on condensed horizons or shells. Although they grow in multiple directions (growth within the sediment), the predominant crystal growth direction is towards the sediment-water interface. Resedimentation of broken fans is evidence that crystal growth was penecontemporaneous with sedimentation. The carbon isotope composition of the fans (transects up bladed crystals) and elemental abundances within the layers support shallow subsurface, microbially mediated growth. The resemblance of these Early Jurassic fibrous calcite layers to those found at the end-Triassic and their paucity in the Phanerozoic record suggest that analogous processes occurred at both events. Nevertheless, the Pliensbachian-Toarcian carbonate fans occur at multiple horizons and while some are within the T-OAE, others are significantly above and below the event. The formation of these authigenic layers cannot be driven exclusively by the geochemical and paleoenvironmental changes during the T-OAE. Therefore, a new model of formation for the Early Jurassic carbonate fans is required.

Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass

NASA Astrophysics Data System (ADS)

Bansen, R.; Ehlers, C.; Teubner, Th.; Boeck, T.

2016-09-01

The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented. This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics. Project supported by the German Research Foundation (DFG) (No. BO 1129/5-1).

Real-time x-ray scattering study of the initial growth of organic crystals on polymer brushes

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Sung Yup; Ahn, Kwangseok; Kim, Doris Yangsoo

2014-04-21

We studied the early-stage growth structures of pentacene organic crystals grown on polymer brushes using real-time x-ray scattering techniques. In situ x-ray reflectivity and atomic force microscopy analyses revealed that at temperatures close to the glass transition temperature of polymer brush, the pentacene overlayer on a polymer brush film showed incomplete condensation and 3D island structures from the first monolayer. A growth model based on these observations was used to quantitatively analyze the real-time anti-Bragg x-ray scattering intensities measured during pentacene growth to obtain the time-dependent layer coverage of the individual pentacene monolayers. The extracted total coverage confirmed significant desorptionmore » and incomplete condensation in the pentacene films deposited on the polymer brushes. These effects are ascribed to the change in the surface viscoelasticity of the polymer brushes around the glass transition temperature.« less

Growth and characterization of ZnO multipods on functional surfaces with different sizes and shapes of Ag particles

NASA Astrophysics Data System (ADS)

A, Kamalianfar; S, A. Halim; Mahmoud Godarz, Naseri; M, Navasery; Fasih, Ud Din; J, A. M. Zahedi; Kasra, Behzad; K, P. Lim; A Lavari, Monghadam; S, K. Chen

2013-08-01

Three-dimensional ZnO multipods are successfully synthesized on functional substrates using the vapor transport method in a quartz tube. The functional surfaces, which include two different distributions of Ag nanoparticles and a layer of commercial Ag nanowires, are coated onto silicon substrates before the growth of ZnO nanostructures. The structures and morphologies of the ZnO/Ag heterostructures are investigated using X-ray diffraction and field emission scanning electron microscopy. The sizes and shapes of the Ag particles affect the growth rates and initial nucleations of the ZnO structures, resulting in different numbers and shapes of multipods. They also influence the orientation and growth quality of the rods. The optical properties are studied by photoluminescence, UV-vis, and Raman spectroscopy. The results indicate that the surface plasmon resonance strongly depends on the sizes and shapes of the Ag particles.

Realignment of Nanocrystal Aggregates into Single Crystals as a Result of Inherent Surface Stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhaoming; Pan, Haihua; Zhu, Genxing

2016-07-19

Assembly of nanoparticles building blocks during single crystal growth is widely observed in both natural and synthetic environments. Although this form of non-classical crystallization is generally described by oriented attachment, random aggregation of building blocks leading to single crystal products is also observed, but the mechanism of crystallographic realignment is unknown. We herein reveal that random attachment during aggregation-based growth initially produces a non-oriented growth front. Subsequent evolution of the orientation is driven by the inherent surface stress applied by the disordered surface layer and results in single crystal formation via grain boundary migration. This mechanism is corroborated by measurementsmore » of orientation rate vs external stress, demonstrating a predictive relationship between the two. These findings advance our understanding of aggregation-based growth of natural minerals by nanocrystals, and suggest an approach to material synthesis that takes advantage of stress induced co-alignment.« less

Genetic analysis of ectopic growth suppression during planar growth of integuments mediated by the Arabidopsis AGC protein kinase UNICORN

PubMed Central

2013-01-01

Background The coordination of growth within a tissue layer is of critical importance for tissue morphogenesis. For example, cells within the epidermis undergo stereotypic cell divisions that are oriented along the plane of the layer (planar growth), thereby propagating the layered epidermal structure. Little is known about the developmental control that regulates such planar growth in plants. Recent evidence suggested that the Arabidopsis AGC VIII protein kinase UNICORN (UCN) maintains planar growth by suppressing the formation of ectopic multicellular protrusions in several floral tissues including integuments. In the current model UCN controls this process during integument development by directly interacting with the ABERRANT TESTA SHAPE (ATS) protein, a member of the KANADI (KAN) family of transcription factors, thereby repressing its activity. Here we report on the further characterization of the UCN mechanism. Results Phenotypic analysis of flowers of ucn-1 plants impaired in floral homeotic gene activity revealed that any of the four floral whorls could produce organs carrying ucn-1 protrusions. The ectopic outgrowths of ucn integuments did not accumulate detectable signals of the auxin and cytokinin reporters DR5rev::GFP and ARR5::GUS, respectively. Furthermore, wild-type and ucn-1 seedlings showed similarly strong callus formation upon in vitro culture on callus-inducing medium. We also show that ovules of ucn-1 plants carrying the dominant ats allele sk21-D exhibited more pronounced protrusion formation. Finally ovules of ucn-1 ett-1 double mutants and ucn-1 ett-1 arf4-1 triple mutants displayed an additive phenotype. Conclusions These data deepen the molecular insight into the UCN-mediated control of planar growth during integument development. The presented evidence indicates that UCN downstream signaling does not involve the control of auxin or cytokinin homeostasis. The results also reveal that UCN interacts with ATS independently of an ATS/ETT complex required for integument initiation and they further emphasize the necessity to balance UCN and ATS proteins during maintenance of planar growth in integuments. PMID:23281875

The Influence of Impurities and Metallic Capping Layers on the Microstructure of Copper Interconnects

NASA Astrophysics Data System (ADS)

Rizzolo, Michael

As copper interconnects have scaled to ever smaller dimensions on semiconductor devices, the microstructure has become increasingly detrimental for performance and reliability. Small grains persist in interconnects despite annealing at high temperatures, leading to higher line resistance and more frequent electromigration-induced failures. Conventionally, it was believed that impurities from the electrodeposition pinned grain growth, but limitations in analytical techniques meant the effect was inferred rather than observed. Recent advances in analytical techniques, however, have enabled this work to quantify impurity content, location, and diffusion in relation to microstructural changes in electroplated copper. Surface segregation of impurities during the initial burst of grain growth was investigated. After no surface segregation was observed, a microfluidic plating cell was constructed to plate multilayer films with regions of intentionally high and low impurity concentrations to determine if grain growth could be pinned by the presence of impurities; it was not. An alternate mechanism for grain boundary pinning based on the texture of the seed layer is proposed, supported by time-resolved transmission electron microscopy and transmission electron backscatter diffraction data. The suggested model posits that the seed in narrow features has no preferred orientation, which results in rapid nucleation of subsurface grains in trench regions prior to recrystallization from the overburden down. These rapidly growing grains are able to block off several trenches from the larger overburden grains, inhibiting grain growth in narrow features. With this knowledge in hand, metallic capping layers were employed to address the problematic microstructure in 70nm lines. The capping layers (chromium, nickel, zinc, and tin) were plated on the copper overburden prior to annealing to manipulate the stress gradient and microstructural development during annealing. It appeared that regardless of as-plated stress, nickel capping altered the recrystallized texture of the copper over patterned features. The nickel capping also caused a 2x increase in the number of advantageous 'bamboo' grains that span the entire trench, which effectively block electromigration pathways. These data provides a more fundamental understanding of manipulating the microstructure in copper interconnects using pre-anneal capping layers, and demonstrates a strategy to improve the microstructure beyond the capabilities of simple annealing.

Initial development of the two-dimensional ejector shear layer - Experimental results

NASA Technical Reports Server (NTRS)

Benjamin, M. A.; Dufflocq, M.; Roan, V. P.

1993-01-01

An experimental investigation designed to study the development of shear layers in a two-dimensional single-nozzle ejector has been completed. In this study, combinations of air/air, argon/air, helium/air, and air/helium were used as the supersonic primary and subsonic secondary, respectively. Mixing of the gases occurred in a constant-area tube 39.1 mm high by 25.4 mm wide, where the inlet static pressure was maintained at 35 kPa. The cases studied resulted in convective Mach numbers between 0.058 and 1.64, density ratios between 0.102 and 3.49, and velocity ratios between 0.065 and 0.811. The resulting data shows the differences in the shear-layer development for the various combinations of independent variables utilized in the investigation. The normalized growth-rates in the near-field were found to be similar to two-dimensional mixing layers. These results have enhanced the ability to analyze and design ejector systems as well as providing a better understanding of the physics.

Advanced Si solid phase crystallization for vertical channel in vertical NANDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sangsoo; Son, Yong-Hoon; Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701

The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers weremore » shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.« less

Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals

DOE PAGES

Perret, Edith; Highland, M. J.; Stephenson, G. B.; ...

2014-08-04

Non-polar orientations of III-nitride semiconductors have attracted significant interest due to their potential application in optoelectronic devices with enhanced efficiency. Using in-situ surface x-ray scattering during metal-organic vapor phase epitaxy (MOVPE) of GaN on non-polar (m-plane) and polar (c-plane) orientations of single crystal substrates, we have observed the homoepitaxial growth modes as a function of temperature and growth rate. On the m-plane surface we observe all three growth modes (step-flow, layer-by-layer, and three-dimensional) as conditions are varied. In contrast, the +c-plane surface exhibits a direct cross over between step-flow and 3-D growth, with no layer-by-layer regime. The apparent activation energymore » of 2.8 ± 0.2 eV observed for the growth rate at the layer-by-layer to step-flow boundary on the m-plane surface is consistent with those observed for MOVPE growth of other III-V compounds, indicating a large critical nucleus size for islands.« less

Lattice Boltzmann study on Kelvin-Helmholtz instability: roles of velocity and density gradients.

PubMed

Gan, Yanbiao; Xu, Aiguo; Zhang, Guangcai; Li, Yingjun

2011-05-01

A two-dimensional lattice Boltzmann model with 19 discrete velocities for compressible fluids is proposed. The fifth-order weighted essentially nonoscillatory (5th-WENO) finite difference scheme is employed to calculate the convection term of the lattice Boltzmann equation. The validity of the model is verified by comparing simulation results of the Sod shock tube with its corresponding analytical solutions [G. A. Sod, J. Comput. Phys. 27, 1 (1978).]. The velocity and density gradient effects on the Kelvin-Helmholtz instability (KHI) are investigated using the proposed model. Sharp density contours are obtained in our simulations. It is found that the linear growth rate γ for the KHI decreases by increasing the width of velocity transition layer D(v) but increases by increasing the width of density transition layer D(ρ). After the initial transient period and before the vortex has been well formed, the linear growth rates γ(v) and γ(ρ), vary with D(v) and D(ρ) approximately in the following way, lnγ(v)=a-bD(v) and γ(ρ)=c+elnD(ρ)(D(ρ)D(ρ)(E) the linear growth rate γ(ρ) does not vary significantly any more. One can use the hybrid effects of velocity and density transition layers to stabilize the KHI. Our numerical simulation results are in general agreement with the analytical results [L. F. Wang et al., Phys. Plasma 17, 042103 (2010)]. © 2011 American Physical Society

Direct observation of nanowire growth and decomposition.

PubMed

Rackauskas, Simas; Shandakov, Sergey D; Jiang, Hua; Wagner, Jakob B; Nasibulin, Albert G

2017-09-26

Fundamental concepts of the crystal formation suggest that the growth and decomposition are determined by simultaneous embedding and removal of the atoms. Apparently, by changing the crystal formation conditions one can switch the regimes from the growth to decomposition. To the best of our knowledge, so far this has been only postulated, but never observed at the atomic level. By means of in situ environmental transmission electron microscopy we monitored and examined the atomic layer transformation at the conditions of the crystal growth and its decomposition using CuO nanowires selected as a model object. The atomic layer growth/decomposition was studied by varying an O 2 partial pressure. Three distinct regimes of the atomic layer evolution were experimentally observed: growth, transition and decomposition. The transition regime, at which atomic layer growth/decomposition switch takes place, is characterised by random nucleation of the atomic layers on the growing {111} surface. The decomposition starts on the side of the nanowire by removing the atomic layers without altering the overall crystal structure, which besides the fundamental importance offers new possibilities for the nanowire manipulation. Understanding of the crystal growth kinetics and nucleation at the atomic level is essential for the precise control of 1D crystal formation.

Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and theory

NASA Astrophysics Data System (ADS)

Tarnawska, L.; Dabrowski, J.; Grzela, T.; Lehmann, M.; Niermann, T.; Paszkiewicz, R.; Storck, P.; Schroeder, T.

2013-06-01

The final film quality of GaN on foreign substrates is known to crucially depend on the initial GaN interface and nucleation characteristics. To shed light on these characteristics of recently pioneered virtual, hexagonal GaN(0001) substrates on Si(111) via step graded Sc2O3(111)/Y2O3(111) buffers, a complex GaN(0001)/Sc2O3(111) interface structure model and the initial nucleation scenario is derived from a combined experimental (reflection high energy electron diffraction and X-ray photoelectron spectroscopy) and theoretical ab initio study. It is shown that the GaN/Sc2O3 interface chemistry is determined by a N-Ga-O-Sc atomic arrangement leading to N-polar GaN films. However, the atomic GaN(0001)/Sc2O3(111) interface configuration is complex and local perturbations might be at the origin of Ga-polar inversion domains in the mainly N-polar GaN films. The initial growth of GaN on Sc2O3 is characterized by an ultrathin N-Ga-O-Sc wetting layer which carries tensile strain and relaxes with increasing thickness. Further GaN deposition results in the formation of 3D islands which fully relax before island coalescence occurs. The implications of the GaN/Sc2O3 interface configuration, the 3D nucleation growth mode, and the coalescence process of misaligned islands are discussed with respect to the defect characteristics (inversion domains, cubic inclusions, threading dislocations) of the final GaN layer.

Environmentally-assisted technique for transferring devices onto non-conventional substrates

DOEpatents

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

2016-05-10

A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing fluid-assisted interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

On the mechanics of continua with boundary energies and growing surfaces

NASA Astrophysics Data System (ADS)

Papastavrou, Areti; Steinmann, Paul; Kuhl, Ellen

2013-06-01

Many biological systems are coated by thin films for protection, selective absorption, or transmembrane transport. A typical example is the mucous membrane covering the airways, the esophagus, and the intestine. Biological surfaces typically display a distinct mechanical behavior from the bulk; in particular, they may grow at different rates. Growth, morphological instabilities, and buckling of biological surfaces have been studied intensely by approximating the surface as a layer of finite thickness; however, growth has never been attributed to the surface itself. Here, we establish a theory of continua with boundary energies and growing surfaces of zero thickness in which the surface is equipped with its own potential energy and is allowed to grow independently of the bulk. In complete analogy to the kinematic equations, the balance equations, and the constitutive equations of a growing solid body, we derive the governing equations for a growing surface. We illustrate their spatial discretization using the finite element method, and discuss their consistent algorithmic linearization. To demonstrate the conceptual differences between volume and surface growth, we simulate the constrained growth of the inner layer of a cylindrical tube. Our novel approach toward continua with growing surfaces is capable of predicting extreme growth of the inner cylindrical surface, which more than doubles its initial area. The underlying algorithmic framework is robust and stable; it allows to predict morphological changes due to surface growth during the onset of buckling and beyond. The modeling of surface growth has immediate biomedical applications in the diagnosis and treatment of asthma, gastritis, obstructive sleep apnoea, and tumor invasion. Beyond biomedical applications, the scientific understanding of growth-induced morphological instabilities and surface wrinkling has important implications in material sciences, manufacturing, and microfabrication, with applications in soft lithography, metrology, and flexible electronics.

Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers

NASA Astrophysics Data System (ADS)

Chong, Haining; Wang, Zhewei; Chen, Chaonan; Xu, Zemin; Wu, Ke; Wu, Lan; Xu, Bo; Ye, Hui

2018-04-01

In order to suppress dislocation generation, we develop a "three-step growth" method to heteroepitaxy low dislocation density germanium (Ge) layers on silicon with the MBE process. The method is composed of 3 growth steps: low temperature (LT) seed layer, LT-HT intermediate layer as well as high temperature (HT) epilayer, successively. Threading dislocation density (TDD) of epitaxial Ge layers is measured as low as 1.4 × 106 cm-2 by optimizing the growth parameters. The results of Raman spectrum showed that the internal strain of heteroepitaxial Ge layers is tensile and homogeneous. During the growth of LT-HT intermediate layer, TDD reduction can be obtained by lowering the temperature ramping rate, and high rate deposition maintains smooth surface morphology in Ge epilayer. A mechanism based on thermodynamics is used to explain the TDD and surface morphological dependence on temperature ramping rate and deposition rate. Furthermore, we demonstrate that the Ge layer obtained can provide an excellent platform for III-V materials integrated on Si.

Selective growth of Ge1- x Sn x epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Takeuchi, Wakana; Washizu, Tomoya; Ike, Shinichi; Nakatsuka, Osamu; Zaima, Shigeaki

2018-01-01

We have investigated the selective growth of a Ge1- x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal-organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge1- x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge1- x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge1- x Sn x growth on the SiO2 region. In addition, we found that the Sn content in the Ge1- x Sn x epitaxial layer increases with width of the SiO2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge1- x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.

The role of vascular endothelial growth factor in proliferation of odontogenic cysts and tumors: An immunohistochemical study.

PubMed

Gupta, Bhavana; Chandra, Shaleen; Singh, Anil; Sah, Kunal; Raj, Vineet; Gupta, Vivek

2016-01-01

Vascular endothelial growth factor (VEGF) is capable of initiating angiogenesis in blood vessels and may act as mitogenic agent for epithelium of odontogenic cysts and tumors. This study was conducted to evaluate the role of epithelial VEGF expression in odontogenic cysts and ameloblastoma and its correlation with argyrophilic nucleolar organizer region counts to assess its role in their biological behavior. In this retrospective cross-sectional study, 45 histologically confirmed cases, 15 cases of each of keratocystic odontogenic tumors (KCOTs), dentigerous cysts, and ameloblastomas were examined for immunohistochemical expression for epithelial VEGF, and argyrophilic nucleolar organizer regions (AgNORs) (used as secondary marker in this study) staining was done for comparing the proliferative capacity with VEGF. KCOT shows mild expression within the basal layers and strong expression in the suprabasal layer whereas, in dentigerous cysts, a majority showed no VEGF expression whereas ameloblastomas showed strong expression in all cases by stellate reticulum-like cells at the center of the follicles and suprabasal layers of epithelium. The results of AgNOR counts were higher in KCOTs as compared to ameloblastoma and least in dentigerous cysts. VEGF expression by the epithelium of odontogenic cysts and tumors may play a role in epithelial proliferation via autocrine mechanism as reflected by increased AgNOR counts. The angiogenic activity via paracrine pathway may be responsible for the difference in growth rate and neoplastic behavior of the lesions.

Isolation of Plasma Membrane Vesicles from Mouse Placenta at Term and Measurement of System A and System β Amino Acid Transporter Activity

PubMed Central

Kusinski, L.C.; Jones, C.J.P.; Baker, P.N.; Sibley, C.P.; Glazier, J.D.

2010-01-01

Placental amino acid transport is essential for optimal fetal growth and development, with a reduced fetal provision of amino acids being implicated as a potential cause of fetal growth restriction (FGR). Understanding placental insufficiency related FGR has been aided by the development of mouse models that have features of the human disease. However, to take maximal advantage of these, methods are required to study placental function in the mouse. Here, we report a method to isolate plasma membrane vesicles from mouse placenta near-term and have used these to investigate two amino acid transporters, systems A and β, the activities of which are reduced in human placental microvillous plasma membrane (MVM) vesicles from FGR pregnancies. Plasma membrane vesicles were isolated at embryonic day 18 by a protocol involving homogenisation, MgCl2 precipitation and centrifugation. Vesicles were enriched 11.3 ± 0.5-fold in alkaline phosphatase activity as compared to initial homogenate, with minimal intracellular organelle contamination as judged by marker analyses. Cytochemistry revealed alkaline phosphatase was localised between trophoblast layers I and II, with intense reaction product deposited on the maternal-facing plasma membrane of layer II, suggesting that vesicles were derived from this trophoblast membrane. System A and system β activity in mouse placental vesicles, measured as Na+-dependent uptake of 14C-methylaminoisobutyric acid (MeAIB) and 3H-taurine respectively confirmed localisation of these transporters to the maternal-facing plasma membrane of layer II. Comparison to human placental MVM showed that system A activity was comparable at initial rate between species whilst system β activity was significantly lower in mouse. This mirrored the lower expression of TAUT observed in mouse placental vesicles. We conclude that syncytiotrophoblast layer II-derived plasma membrane vesicles can be isolated and used to examine transporter function. PMID:19954844

Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire

NASA Astrophysics Data System (ADS)

Dixit, Ripudaman; Tyagi, Prashant; Kushvaha, Sunil Singh; Chockalingam, Sreekumar; Yadav, Brajesh Singh; Sharma, Nita Dilawar; Kumar, M. Senthil

2017-04-01

We have investigated the influence of growth temperature on the in-plane strain, structural, optical and mechanical properties of heteroepitaxially grown GaN layers on sapphire (0001) substrate by laser molecular beam epitaxy (LMBE) technique in the temperature range 500-700 °C. The GaN epitaxial layers are found to have a large in-plane compressive stress of about 1 GPa for low growth temperatures but the strain drastically reduced in the layer grown at 700 °C. The nature of the in-plane strain has been analyzed using high resolution x-ray diffraction, atomic force microscopy (AFM), Raman spectroscopy and photoluminescence (PL) measurements. From AFM, a change in GaN growth mode from grain to island is observed at the high growth temperature above 600 °C. A blue shift of 20-30 meV in near band edge PL emission line has been noticed for the GaN layers containing the large in-plane strain. These observations indicate that the in-plane strain in the GaN layers is dominated by a biaxial strain. Using nanoindentation, it is found that the indentation hardness and Young's modulus of the GaN layers increases with increasing growth temperature. The results disclose the critical role of growth mode in determining the in-plane strain and mechanical properties of the GaN layers grown by LMBE technique.

Influence of initial stress, irregularity and heterogeneity on Love-type wave propagation in double pre-stressed irregular layers lying over a pre-stressed half-space

NASA Astrophysics Data System (ADS)

Singh, Abhishek Kumar; Das, Amrita; Parween, Zeenat; Chattopadhyay, Amares

2015-10-01

The present paper deals with the propagation of Love-type wave in an initially stressed irregular vertically heterogeneous layer lying over an initially stressed isotropic layer and an initially stressed isotropic half-space. Two different types of irregularities, viz., rectangular and parabolic, are considered at the interface of uppermost initially stressed heterogeneous layer and intermediate initially stressed isotropic layer. Dispersion equations are obtained in closed form for both cases of irregularities, distinctly. The effect of size and shape of irregularity, horizontal compressive initial stress, horizontal tensile initial stress, heterogeneity of the uppermost layer and width ratio of the layers on phase velocity of Love-type wave are the major highlights of the study. Comparative study has been made to identify the effects of different shapes of irregularity, presence of heterogeneity and initial stresses. Numerical computations have been carried out and depicted by means of graphs for the present study.

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon

NASA Astrophysics Data System (ADS)

Murata, H.; Toko, K.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

2017-01-01

Multilayer graphene (MLG) growth on arbitrary substrates is desired for incorporating carbon wiring and heat spreaders into electronic devices. We investigated the metal-induced layer exchange growth of a sputtered amorphous C layer using Ni as a catalyst. A MLG layer uniformly formed on a SiO2 substrate at 600 °C by layer exchange between the C and Ni layers. Raman spectroscopy and electron microscopy showed that the resulting MLG layer was highly oriented and contained relatively few defects. The present investigation will pave the way for advanced electronic devices integrated with carbon materials.

Stress-Induced Resistive Switching in Pt/HfO2/Ti Devices

NASA Astrophysics Data System (ADS)

Zeevi, Gilad; Katsman, Alexander; Yaish, Yuval E.

2018-02-01

In the present work, we study the initial SET mechanism of resistive switching (RS) in Pt/HfO2/Ti devices under a static electrical stress and the RS mechanism under a bias sweeping mode with rates of 100 mV/s-300 mV/s. We characterize the thin HfO2 dielectric layer by x-ray photoelectron spectroscopy and x-ray diffraction. These findings show that the layer structure is stoichiometric and nanocrystalline with a crystal diameter of ˜ 14 Å. We measure the temporal dependence of the conductive filament growth at different temperatures and for various biases. Furthermore, these devices present stable bipolar resistive switching with a high-to-low resistive state (HRS/LRS) ratio of more than three orders of magnitude. Activation energy E RS ≈ 0.56 eV and drift current parameter V 0 ≈ 0.07 V were determined from the temporal dependence of the initial `SET' process, first HRS to LRS transition [for static electrical stress of V DS = (4.7-5.0 V)]. We analyze the results according to our model suggesting generation of double-charge oxygen vacancies at the anode and their diffusion across the dielectric layer. The double-charge vacancies transform to a single charge and then to neutral vacancies by capturing hot electrons, and form a conductive filament as soon as a critical neutral-vacancy cluster is formed across the dielectric layer.

Model free simulations of a high speed reacting mixing layer

NASA Technical Reports Server (NTRS)

Steinberger, Craig J.

1992-01-01

The effects of compressibility, chemical reaction exothermicity and non-equilibrium chemical modeling in a combusting plane mixing layer were investigated by means of two-dimensional model free numerical simulations. It was shown that increased compressibility generally had a stabilizing effect, resulting in reduced mixing and chemical reaction conversion rate. The appearance of 'eddy shocklets' in the flow was observed at high convective Mach numbers. Reaction exothermicity was found to enhance mixing at the initial stages of the layer's growth, but had a stabilizing effect at later times. Calculations were performed for a constant rate chemical rate kinetics model and an Arrhenius type kinetics prototype. The Arrhenius model was found to cause a greater temperature increase due to reaction than the constant kinetics model. This had the same stabilizing effect as increasing the exothermicity of the reaction. Localized flame quenching was also observed when the Zeldovich number was relatively large.

Environmentally-assisted technique for transferring devices onto non-conventional substrates

DOEpatents

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

2014-08-26

A device fabrication method includes: (1) providing a growth substrate including a base and an oxide layer disposed over the base; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

The role of elasticity in simulating long-term tectonic extension

NASA Astrophysics Data System (ADS)

Olive, Jean-Arthur; Behn, Mark D.; Mittelstaedt, Eric; Ito, Garrett; Klein, Benjamin Z.

2016-05-01

While elasticity is a defining characteristic of the Earth's lithosphere, it is often ignored in numerical models of long-term tectonic processes in favour of a simpler viscoplastic description. Here we assess the consequences of this assumption on a well-studied geodynamic problem: the growth of normal faults at an extensional plate boundary. We conduct 2-D numerical simulations of extension in elastoplastic and viscoplastic layers using a finite difference, particle-in-cell numerical approach. Our models simulate a range of faulted layer thicknesses and extension rates, allowing us to quantify the role of elasticity on three key observables: fault-induced topography, fault rotation, and fault life span. In agreement with earlier studies, simulations carried out in elastoplastic layers produce rate-independent lithospheric flexure accompanied by rapid fault rotation and an inverse relationship between fault life span and faulted layer thickness. By contrast, models carried out with a viscoplastic lithosphere produce results that may qualitatively resemble the elastoplastic case, but depend strongly on the product of extension rate and layer viscosity U × ηL. When this product is high, fault growth initially generates little deformation of the footwall and hanging wall blocks, resulting in unrealistic, rigid block-offset in topography across the fault. This configuration progressively transitions into a regime where topographic decay associated with flexure is fully accommodated within the numerical domain. In addition, high U × ηL favours the sequential growth of multiple short-offset faults as opposed to a large-offset detachment. We interpret these results by comparing them to an analytical model for the fault-induced flexure of a thin viscous plate. The key to understanding the viscoplastic model results lies in the rate-dependence of the flexural wavelength of a viscous plate, and the strain rate dependence of the force increase associated with footwall and hanging wall bending. This behaviour produces unrealistic deformation patterns that can hinder the geological relevance of long-term rifting models that assume a viscoplastic rheology.

Analysis of layer-by-layer thin-film oxide growth using RHEED and Atomic Force Microscopy

NASA Astrophysics Data System (ADS)

Adler, Eli; Sullivan, M. C.; Gutierrez-Llorente, Araceli; Joress, H.; Woll, A.; Brock, J. D.

2015-03-01

Reflection high energy electron diffraction (RHEED) is commonly used as an in situ analysis tool for layer-by-layer thin-film growth. Atomic force microscopy is an equally common ex situ tool for analysis of the film surface, providing visual evidence of the surface morphology. During growth, the RHEED intensity oscillates as the film surface changes in roughness. It is often assumed that the maxima of the RHEED oscillations signify a complete layer, however, the oscillations in oxide systems can be misleading. Thus, using only the RHEED maxima is insufficient. X-ray reflectivity can also be used to analyze growth, as the intensity oscillates in phase with the smoothness of the surface. Using x-ray reflectivity to determine the thin film layer deposition, we grew three films where the x-ray and RHEED oscillations were nearly exactly out of phase and halted deposition at different points in the growth. Pre-growth and post-growth AFM images emphasize the fact that the maxima in RHEED are not a justification for determining layer completion. Work conducted at the Cornell High Energy Synchrotron Source (CHESS) supported by NSF Awards DMR-1332208 and DMR-0936384 and the Cornell Center for Materials Research Shared Facilities are supported through DMR-1120296.

Structure and transport in organic semiconductor thin films

NASA Astrophysics Data System (ADS)

Vos, Sandra Elizabeth Fritz

Organic Semiconductors represent an exciting area of research due to their potential application in cheap and flexible electronics. In spite of the abundant interest in organic electronics the electronic transport mechanism remains poorly understood. Understanding the connection between molecular structure, crystal packing, intermolecular interactions and electronic delocalization is an important aspect of improving the transport properties of organics in thin film transistors (TFTs). In an organic thin film transistor, charge carrier transport is believed to occur within the first few monolayers of the organic material adjacent to the dielectric. It is therefore critical to understand the initial stages of film growth and molecular structure in these first few layers and relate this structure to electronic transport properties. The structure of organic films at the interface with an amorphous silicon dioxide ( a-SiO2) dielectric and how structure relates to transport in a TFT is the focus of this thesis. Pentacene films on a-SiO2 were extensively characterized with specular and in-plane X-ray diffraction, and CuKalpha1, and synchrotron radiation. The first layer of pentacene molecules adjacent to the a-SiO2 crystallized in a rectangular unit cell with the long axis of the molecules perpendicular to the substrate surface. Subsequent layers of pentacene crystallized in a slightly oblique in-plane unit cell that evolved as thickness was increased. The rectangular monolayer phase of pentacene did not persist when subsequent layers were deposited. Specular diffraction with Synchrotron radiation of a 160 A pentacene film (˜ 10 layers) revealed growth initiation of a bulk-like phase and persistence of the thin-film phase. Pentacene molecules were more tilted in the bulk-like phase and the in-plane unit cell was slightly more oblique. Pentacene grains began to grow randomly oriented with respect to the substrate surface (out-of-plane) in films near 650 A in thickness. The single crystal bulk phase of pentacene was observed from specular diffraction (CuKalpha1) of a 2.5 mum film. These results suggest that the thickness of pentacene films on a-SiO2 is an important aspect in the comparison of crystal structure and electronic transport.

Dynamics of a microbial community associated with manure hot spots as revealed by phospholipid fatty acid analyses.

PubMed Central

Frostegård, A; Petersen, S O; Bååth, E; Nielsen, T H

1997-01-01

Microbial community dynamics associated with manure hot spots were studied by using a model system consisting of a gel-stabilized mixture of soil and manure, placed between layers of soil, during a 3-week incubation period. The microbial biomass, measured as the total amount of phospholipid fatty acids (PLFA), had doubled within a 2-mm distance from the soil-manure interface after 3 days. Principal-component analyses demonstrated that this increase was accompanied by reproducible changes in the composition of PLFA, indicating changes in the microbial community structure. The effect of the manure was strongest in the 2-mm-thick soil layer closest to the interface, in which the PLFA composition was statistically significantly different (P < 0.05) from that of the unaffected soil layers throughout the incubation period. An effect was also observed in the soil layer 2 to 4 mm from the interface. The changes in microbial biomass and community structure were mainly attributed to the diffusion of dissolved organic carbon from the manure. During the initial period of microbial growth, PLFA, which were already more abundant in the manure than in the soil, increased in the manure core and in the 2-mm soil layer closest to the interface. After day 3, the PLFA composition of these layers gradually became more similar to that of the soil. The dynamics of individual PLFA suggested that both taxonomic and physiological changes occurred during growth. Examples of the latter were decreases in the ratios of 16:1 omega 7t to 16:1 omega 7c and of cyclopropyl fatty acids to their respective precursors, indicating a more active bacterial community. An inverse relationship between bacterial PLFA and the eucaryotic 20:4 PLFA (arachidonic acid) suggested that grazing was important. PMID:9172342

Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buršík, J., E-mail: bursik@iic.cas.cz; Kužel, R.; Knížek, K.

2013-07-15

Thin films of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO{sub 3}(1 1 1) (ST) single crystal substrates using epitaxial SrFe{sub 12}O{sub 19} (M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. The vital parameters of the seed layer, i.e. thickness, substrate coverage, crystallization conditions and temperature rampmore » were optimized with the aim to obtain epitaxially crystallized Y phase. X-ray diffraction Pole figure measurements and Φ scans reveal perfect parallel in-plane alignment of SrTiO{sub 3} substrate and both hexaferrite phases. - Graphical abstract: XRD pole figure and AFM patterns of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} thin film epitaxially grown on SrTiO{sub 3}(1 1 1) single crystal using seeding layer templating. - Highlights: • Single phase Y-type hexagonal ferrite thin films were prepared by CSD method. • Seed M layer breaks into isolated single crystal islands and serves as a template. • Large seed grains grow by consuming the grains within the bulk of recoated film. • We explained the observed orientation relation of epitaxial domains. • Epitaxial growth on SrTiO{sub 3}(1 1 1) with relation (0 0 1){sub M,Y}//(1 1 1){sub ST}+[1 0 0]{sub M,Y}//[2 −1 −1]{sub ST}.« less

Nucleation of ripplocations through atomistic modeling of surface nanoindentation in graphite

NASA Astrophysics Data System (ADS)

Freiberg, D.; Barsoum, M. W.; Tucker, G. J.

2018-05-01

In this work, we study the nucleation and subsequent evolution behavior of ripplocations - a newly proposed strain accommodating defect in layered materials where one, or more, layers buckle orthogonally to the layers - using atomistic modeling of graphite. To that effect, we model the response to cylindrical indenters with radii R of 50, 100, and 250 nm, loaded edge-on into graphite layers and the strain gradient effects beneath the indenter are quantified. We show that the response is initially elastic followed by ripplocation nucleation, and growth of multiple fully reversible ripplocation boundaries below the indenter. In the elastic region, the stress is found to be a function of indentation volume; beyond the elastic regime, the interlayer strain gradient emerges as paramount in the onset of ripplocation nucleation and subsequent in-plane stress relaxation. Furthermore, ripplocation boundaries that nucleate from the alignment of ripplocations on adjacent layers are exceedingly nonlocal and propagate, wavelike, away from the indented surface. This work not only provides a critical understanding of the mechanistic underpinnings of the deformation of layered solids and formation of kink boundaries, but also provides a more complete description of the nucleation mechanics of ripplocations and their strain field dependence.

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Budde, Melanie; Tschammer, Carsten; Franz, Philipp; Feldl, Johannes; Ramsteiner, Manfred; Goldhahn, Rüdiger; Feneberg, Martin; Barsan, Nicolae; Oprea, Alexandru; Bierwagen, Oliver

2018-05-01

NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by X-ray diffraction measurements for all used growth conditions and substrates except MgO(111). A detailed growth series on MgO(100) was prepared using substrate temperatures ranging from 20 °C to 900 °C to investigate the influence on the layer characteristics. Energy-dispersive X-ray spectroscopy indicated close-to-stoichiometric layers with an oxygen content of ≈ 47 at. % and ≈ 50 at. % grown under low and high O-flux, respectively. All NiO layers had a root-mean-square surface roughness below 1 nm, measured by atomic force microscopy, except for rougher layers grown at 900 °C or using molecular oxygen. Growth at 900 °C led to a significant diffusion of Mg from the substrate into the film. The relative intensity of the quasi-forbidden one-phonon Raman peak is introduced as a gauge of the crystal quality, indicating the highest layer quality for growth at low oxygen flux and high growth temperature, likely due to the resulting high adatom diffusion length during growth. The optical and electrical properties were investigated by spectroscopic ellipsometry and resistance measurements, respectively. All NiO layers were transparent with an optical bandgap around 3.6 eV and semi-insulating at room temperature. However, changes upon exposure to reducing or oxidizing gases of the resistance of a representative layer at elevated temperature were able to confirm p-type conductivity, highlighting their suitability as a model system for research on oxide-based gas sensing.

Artificial recharge of groundwater through sprinkling infiltration: impacts on forest soil and the nutrient status and growth of Scots pine.

PubMed

Nöjd, Pekka; Lindroos, Antti-Jussi; Smolander, Aino; Derome, John; Lumme, Ilari; Helmisaari, Heljä-Sisko

2009-05-01

We studied the chemical changes in forest soil and the effects on Scots pine trees caused by continuous sprinkling infiltration over a period of two years, followed by a recovery period of two years. Infiltration increased the water input onto the forest soil by a factor of approximately 1000. After one year of infiltration, the pH of the organic layer had risen from about 4.0 to 6.7. The NH(4)-N concentration in the organic layer increased, most probably due to the NH(4) ions in the infiltration water, as the net N mineralization rate did not increase. Sprinkling infiltration initiated nitrification in the mineral soil. Macronutrient concentrations generally increased in the organic layer and mineral soil. An exception, however, was the concentration of extractable phosphorus, which decreased strongly during the infiltration period and did not show a recovery within two years. The NO(3)-N and K concentrations had reverted back to their initial level during the two-year recovery period, while the concentrations of Ca, Mg and NH(4)-N were still elevated. Nutrient concentrations in the pine needles increased on the infiltrated plots. However, the needle P concentration increased, despite the decrease in plant-available P in the soil. Despite the increase in the nutrient status, there were some visible signs of chlorosis in the current-year needles after two years of infiltration. The radial growth of the pines more than doubled on the infiltrated plots, which suggests that the very large increase in the water input onto the forest floor had no adverse effect on the functioning of the trees. However, a monitoring period of four years is not sufficient for detecting potential long term detrimental effects on forest trees.

On the Principles of Building a Layered Intrusion

NASA Astrophysics Data System (ADS)

Marsh, B. D.

2009-12-01

An accurate and realistic understanding of all magmatic processes involves knowing the combined physical and chemical fundamentals governing the overall process. Magmatic processes involve such a vast array of sub-processes (e.g., heat and mass transfer, crystal growth, slurry transport and sorting, annealing, resorbtion, etc.) that rarely is there any single feature or measurement that can be safely inverted to solve the problem. And each event as in the formation of an intrusion must at some level for heuristic purposes be defined as an isolated event. This is commonly done without much forethought, as is the absolutely critical assumption of the initial conditions defining the beginning of the event. Almost without exception, it is the initial conditions that determine the outcome of the entire process in all physical and biological systems. Automobile factories produce motorized vehicles not water melons or chimpanzees. Nucleosynthesis of H and He always gives the same set of elements. The initial conditions of the magma giving rise to the end product for mafic layered systems are especially difficult to discern and must be bounded by observing simpler, real time magmatic and volcanic processes. Initial conditions come from posing a series of questions: What was the style and duration of filling? What was the rate of influx and final volume of each delivery of magma? What was the compositional variation and phenocryst content of the individual magmatic deliveries? If phenocrysts are present, were they sorted prior to injection during ascension? What was the original and ongoing shape of the magmatic reservoir? A failure to appreciate or answer such basic questions leads to vastly untenable evolutionary scenarios. Unrealistic initial conditions necessarily lead to unrealistic magmatic scenarios. There are certain safe starting points. Eruptive and emplacement fluxes are limited. The larger an intrusion is the longer it took to build and the longer to build the more varied are the deliveries in time, volume, and constitution. Instantaneous emplacement of crystal free magma are unlikely initial conditions for a large intrusion. The most realistic initial conditions are that intrusions are made of a combination of crystal poor and crystal-rich inputs. Examples abound of the outcomes of systems with clearly known initial conditions. The huge Sudbury magma was produced in 5 minutes at a temperature of 1700C. Clearly crystal free, it produced no layering whatsoever. Sills worldwide, regardless of size, approaching these initial conditions are similarly featureless. At the other extreme are the lava outputs of large volcanic systems like Kilauea. The ensuing lava lakes produced over months are filled with magma containing varied amounts of phenocrysts/xenocrysts and ultramafic layers are produced. Intrusions abound of all sizes that show the same characteristics. Ponding in crystal-laden sills forms layered systems with many of the features of large bodies. Rapid cooling preserves diagnostic textural relations lost to annealing in large bodies. Slow cooling promotes annealing to sharpen and accentuate the initial modal and cryptic layering. Initial conditions are fundamental to understanding the final product. Physical processes buttressed by chemistry mainly dominate magmatic systems.

Preparation and characterization of ZnS thin films by the chemical bath deposition method (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ando, Shizutoshi; Iwashita, Taisuke

2017-06-01

Nowadays, the conversion efficiency of Cu(In･Ga)Se2 (CIGS)-based solar cell already reached over 20%. CdS thin films prepared by chemical bath deposition (CBD) method are used for CIGS-based thin film solar cells as the buffer layer. Over the past several years, a considerable number of studies have been conducted on ZnS buffer layer prepared by CBD in order to improve in conversion efficiency of CIGS-based solar cells. In addition, application to CIGS-based solar cell of ZnS buffer layer is expected as an eco-friendly solar cell by cadmium-free. However, it was found that ZnS thin films prepared by CBD included ZnO or Zn(OH)2 as different phase [1]. Nakata et. al reported that the conversion efficiency of CIGS-based solar cell using ZnS buffer layer (CBD-ZnS/CIGS) reached over 18% [2]. The problem which we have to consider next is improvement in crystallinity of ZnS thin films prepared by CBD. In this work, we prepared ZnS thin films on quarts (Si02) and SnO2/glass substrates by CBD with the self-catalysis growth process in order to improve crystallinity and quality of CBD-ZnS thin films. The solution to use for CBD were prepared by mixture of 0.2M ZnI2 or ZnSO4, 0.6M (NH2)2CS and 8.0M NH3 aq. In the first, we prepared the particles of ZnS on Si02 or SnO2/glass substrates by CBD at 80° for 20 min as initial nucleus (1st step ). After that, the particles of ZnS on Si02 or SnO2/glass substrates grew up to be ZnS thin films by CBD method at 80° for 40 min again (2nd step). We found that the surface of ZnS thin films by CBD with the self-catalyst growth process was flat and smooth. Consequently, we concluded that the CBD technique with self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement of crystallinity of ZnS thin films on SnO2/glass. [1] J.Vidal et,al., Thin Solid Films 419 (2002) 118. [2] T.Nakata et.al., Jpn. J. Appl. Phys. 41(2B), L165-L167 (2002)

A structural health monitoring fastener for tracking fatigue crack growth in bolted metallic joints

NASA Astrophysics Data System (ADS)

Rakow, Alexi Schroder

Fatigue cracks initiating at fastener hole locations in metallic components are among the most common form of airframe damage. The fastener hole site has been surveyed as the second leading initiation site for fatigue related accidents of fixed wing aircraft. Current methods for inspecting airframes for these cracks are manual, whereby inspectors rely on non-destructive inspection equipment or hand-held probes to scan over areas of a structure. Use of this equipment often demands disassembly of the vehicle to search appropriate hole locations for cracks, which elevates the complexity and cost of these maintenance inspections. Improved reliability, safety, and reduced cost of such maintenance can be realized by the permanent integration of sensors with a structure to detect this damage. Such an integrated system of sensors would form a structural health monitoring (SHM) system. In this study, an Additive, Interleaved, Multi-layer Electromagnetic (AIME) sensor was developed and integrated with the shank of a fastener to form a SHM Fastener, a new SHM technology targeted at detection of fastener hole cracks. The major advantages of the SHM Fastener are its installation, which does not require joint layer disassembly, its capability to detect inner layer cracks, and its capability to operate in a continuous autonomous mode. Two methods for fabricating the proposed SHM Fastener were studied. The first option consisted of a thin flexible printed circuit film that was bonded around a thin metallic sleeve placed around the fastener shank. The second option consisted of coating sensor materials directly to the shank of a part in an effort to increase the durability of the sensor under severe loading conditions. Both analytical and numerical models were developed to characterize the capability of the sensors and provide a design tool for the sensor layout. A diagnostic technique for crack growth monitoring was developed to complete the SHM system, which consists of the sensor, data acquisition hardware, algorithm, and diagnostic display. The AIME sensor design, SHM Fastener, and complete SHM system are presented along with experimental results from a series of single-layer and bolted double lap joint aluminum laboratory specimens to validate the capability of these sensors to monitor metallic joints for fastener hole cracks. Fatigue cracks were successfully tracked to over 0.7 inches from the fastener hole in these tests. Sensor output obtained from single-layer fatigue specimens was compared with analytical predictions for fatigue crack growth versus cycle number showing a good correlation in trend between sensor output and predicted crack size.

The influence of SrO and CaO in silicate and phosphate bioactive glasses on human gingival fibroblasts.

PubMed

Massera, J; Kokkari, A; Närhi, T; Hupa, L

2015-06-01

In this paper, we investigate the effect of substituting SrO for CaO in silicate and phosphate bioactive glasses on the human gingival fibroblast activity. In both materials the presence of SrO led to the formation of a CaP layer with partial Sr substitution for Ca. The layer at the surface of the silicate glass consisted of HAP whereas at the phosphate glasses it was close to the DCPD composition. In silicate glasses, SrO gave a faster initial dissolution and a thinner reaction layer probably allowing for a continuous ion release into the solution. In phosphate glasses, SrO decreased the dissolution process and gave a more strongly bonded reaction layer. Overall, the SrO-containing silicate glass led to a slight enhancement in the activity of the gingival fibroblasts cells when compared to the SrO-free reference glass, S53P4. The cell activity decreased up to 3 days of culturing for all phosphate glasses containing SrO. Whereas culturing together with the SrO-free phosphate glass led to complete cell death at 7 days. The glasses containing SrO showed rapid cell proliferation and growth between 7 and 14 days, reaching similar activity than glass S53P4. The addition of SrO in both silicate and phosphate glasses was assumed beneficial for proliferation and growth of human gingival fibroblasts due to Sr incorporation in the reaction layer at the glass surface and released in the cell culture medium.

Highly (002) textured large grain bcc Cr{sub 80}Mn{sub 20} seed layer on Cr{sub 50}Ti{sub 50} amorphous layer for FePt-C granular film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Seong-Jae, E-mail: jsjigst@ecei.tohoku.ac.jp; Saito, Shin; Hinata, Shintaro

Effect of bcc Cr{sub 80}Mn{sub 20} seed layer and Cr{sub 50}Ti{sub 50} amorphous texture inducing layer on the heteroepitaxy system in FePt-C granular film was studied by introducing a new concept of the layered structure. The concept suggested that the large grain seed layer in which the crystallographic texture was initially formed on an amorphous layer in the layered structure can reduce the angular distribution of (002) c-axis crystal orientation in the FePt-C granular film owing to heteroepitaxial growth. Structure analysis by X-ray diffraction revealed that (1) when the substrate heating temperature was elevated from 300 °C to 500 °C, grain sizemore » in the seed layer increased from 9.8 nm to 11.6 nm, and then decreased with further increasing the substrate temperature. The reduction of the grain size over 500 °C corresponds to the crystallization of the amorphous texture inducing layer, (2) when the grain size increased from 9.8 nm to 11.6 nm, the angular distribution of the (002) orientation in the seed layer dramatically decreased from 13.7° to 4.1°. It was shown that the large grain seed layer increased the perpendicular hysteresis in FePt-C granular film.« less

Method of deposition by molecular beam epitaxy

DOEpatents

Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

1995-01-01

A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

Method of deposition by molecular beam epitaxy

DOEpatents

Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

1995-01-10

A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

Turbulent mixing induced by Richtmyer-Meshkov instability

NASA Astrophysics Data System (ADS)

Krivets, V. V.; Ferguson, K. J.; Jacobs, J. W.

2017-01-01

Richtmyer-Meshkov instability is studied in shock tube experiments with an Atwood number of 0.7. The interface is formed in a vertical shock tube using opposed gas flows, and three-dimensional random initial interface perturbations are generated by the vertical oscillation of gas column producing Faraday waves. Planar Laser Mie scattering is used for flow visualization and for measurements of the mixing process. Experimental image sequences are recorded at 6 kHz frequency and processed to obtain the time dependent variation of the integral mixing layer width. Measurements of the mixing layer width are compared with Mikaelian's [1] model in order to extract the growth exponent θ where a fairly wide range of values is found varying from θ ≈ 0.2 to 0.6.

Elucidating doping driven microstructure evolution and optical properties of lead sulfide thin films grown from a chemical bath

NASA Astrophysics Data System (ADS)

Mohanty, Bhaskar Chandra; Bector, Keerti; Laha, Ranjit

2018-03-01

Doping driven remarkable microstructural evolution of PbS thin films grown by a single-step chemical bath deposition process at 60 °C is reported. The undoped films were discontinuous with octahedral-shaped crystallites after 30 min of deposition, whereas Cu doping led to a distinctly different surface microstructure characterized by densely packed elongated crystallites. A mechanism, based on the time sequence study of microstructural evolution of the films, and detailed XRD and Raman measurements, has been proposed to explain the contrasting microstructure of the doped films. The incorporation of Cu forms an interface layer, which is devoid of Pb. The excess Cu ions in this interface layer at the initial stages of film growth strongly interact and selectively stabilize the charged {111} faces containing either Pb or S compared to the uncharged {100} faces that contain both Pb and S. This interaction interferes with the natural growth habit resulting in the observed surface features of the doped films. Concurrently, the Cu-doping potentially changed the optical properties of the films: A significant widening of the bandgap from 1.52 eV to 1.74 eV for increase in Cu concentration from 0 to 20% was observed, making it a highly potential absorber layer in thin film solar cells.

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth.

PubMed

Zaumseil, P; Yamamoto, Y; Schubert, M A; Capellini, G; Skibitzki, O; Zoellner, M H; Schroeder, T

2015-09-04

We investigate the structural properties and strain state of Ge nano-structures selectively grown on Si pillars of about 60 nm diameter with different SiGe buffer layers. A matrix of TEOS SiO2 surrounding the Si nano-pillars causes a tensile strain in the top part at the growth temperature of the buffer that reduces the misfit and supports defect-free initial growth. Elastic relaxation plays the dominant role in the further increase of the buffer thickness and subsequent Ge deposition. This method leads to Ge nanostructures on Si that are free from misfit dislocations and other structural defects, which is not the case for direct Ge deposition on these pillar structures. The Ge content of the SiGe buffer is thereby not a critical parameter; it may vary over a relatively wide range.

Modeling the growth processes of polyelectrolyte multilayers using a quartz crystal resonator.

PubMed

Salomäki, Mikko; Kankare, Jouko

2007-07-26

The layer-by-layer buildup of chitosan/hyaluronan (CH/HA) and poly(l-lysine)/hyaluronan (PLL/HA) multilayers was followed on a quartz crystal resonator (QCR) in different ionic strengths and at different temperatures. These polyelectrolytes were chosen to demonstrate the method whereby useful information is retrieved from acoustically thick polymer layers during their buildup. Surface acoustic impedance recorded in these measurements gives a single or double spiral when plotted in the complex plane. The shape of this spiral depends on the viscoelasticity of the layer material and regularity of the growth process. The polymer layer is assumed to consist of one or two zones. A mathematical model was devised to represent the separation of the layer to two zones with different viscoelastic properties. Viscoelastic quantities of the layer material and the mode and parameters of the growth process were acquired by fitting a spiral to the experimental data. In all the cases the growth process was mainly exponential as a function of deposition cycles, the growth exponent being between 0.250 and 0.275.

Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy

DOE PAGES

Lee, J. H.; Luo, G.; Tung, I. C.; ...

2014-08-03

The A n+1B nO 3n+1 Ruddlesden–Popper homologous series offers a wide variety of functionalities including dielectric, ferroelectric, magnetic and catalytic properties. Unfortunately, the synthesis of such layered oxides has been a major challenge owing to the occurrence of growth defects that result in poor materials behaviour in the higher-order members. To understand the fundamental physics of layered oxide growth, we have developed an oxide molecular beam epitaxy system with in situ synchrotron X-ray scattering capability. We present results demonstrating that layered oxide films can dynamically rearrange during growth, leading to structures that are highly unexpected on the basis of themore » intended layer sequencing. Theoretical calculations indicate that rearrangement can occur in many layered oxide systems and suggest a general approach that may be essential for the construction of metastable Ruddlesden–Popper phases. Lastly, we demonstrate the utility of the new-found growth strategy by performing the first atomically controlled synthesis of single-crystalline La 3Ni 2O 7.« less

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

NASA Astrophysics Data System (ADS)

Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

2016-12-01

The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

Influence of a density increase on the evolution of the Kelvin-Helmholtz instability and vortices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amerstorfer, U. V.; Erkaev, N. V.; Institute of Computational Modelling, 660036 Krasnoyarsk

2010-07-15

Results of two-dimensional nonlinear numerical simulations of the magnetohydrodynamic Kelvin-Helmholtz instability are presented. A boundary layer of a certain width is assumed, which separates the plasma in the upper layer from the plasma in the lower layer. A special focus is given on the influence of a density increase toward the lower layer. The evolution of the Kelvin-Helmholtz instability can be divided into three different phases, namely, a linear growth phase at the beginning, followed by a nonlinear phase with regular structures of the vortices, and finally, a turbulent phase with nonregular structures. The spatial scales of the vortices aremore » about five times the initial width of the boundary layer. The considered configuration is similar to the situation around unmagnetized planets, where the solar wind (upper plasma layer) streams past the ionosphere (lower plasma layer), and thus the plasma density increases toward the planet. The evolving vortices might detach around the terminator of the planet and eventually so-called plasma clouds might be formed, through which ionospheric material can be lost. For the special case of a Venus-like planet, loss rates are estimated, which are of the order of estimated loss rates from observations at Venus.« less

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

NASA Astrophysics Data System (ADS)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-01

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

PubMed

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-27

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth mode, interface reactions and energy band alignment

NASA Astrophysics Data System (ADS)

Chen, Chang Pang; Ong, Bin Leong; Ong, Sheau Wei; Ong, Weijie; Tan, Hui Ru; Chai, Jian Wei; Zhang, Zheng; Wang, Shi Jie; Pan, Ji Sheng; Harrison, Leslie John; Kang, Hway Chuan; Tok, Eng Soon

2017-10-01

Room temperature growth of HfO2 thin film on clean 2H-MoS2 via plasma-sputtering of Hf-metal target in an argon/oxygen environment was studied in-situ using x-ray photoelectron spectroscopy (XPS). The deposited film was observed to grow akin to a layer-by-layer growth mode. At the onset of growth, a mixture of sulfate- and sulfite-like species (SOx2- where x = 3, 4), and molybdenum trioxide (MoO3), are formed at the HfO2/MoS2 interface. An initial decrease in binding energies for both Mo 3d and S 2p core-levels of the MoS2 substrate by 0.4 eV was also observed. Their binding energies, however, did not change further with increasing HfO2 thickness. There was no observable change in the Hf4f core-level binding energy throughout the deposition process. With increasing HfO2 deposition, MoO3 becomes buried at the interface while SOx2- was observed to be present in the film. The shift of 0.4 eV for both Mo 3d and S 2p core-levels of the MoS2 substrate can be attributed to a charge transfer from the substrate to the MoO3/SOx2--like interface layer. Consequently, the Type I heterojunction valence band offset (conduction band offset) becomes 1.7 eV (2.9 eV) instead of 1.3 eV (3.3 eV) expected from considering the bulk HfO2 and MoS2 valence band offset (conduction band offset). The formation of these states and its influence on band offsets will need to be considered in their device applications.

Tri-Layered Nanocomposite Hydrogel Scaffold for the Concurrent Regeneration of Cementum, Periodontal Ligament, and Alveolar Bone.

PubMed

Sowmya, S; Mony, Ullas; Jayachandran, P; Reshma, S; Kumar, R Arun; Arzate, H; Nair, Shantikumar V; Jayakumar, R

2017-04-01

A tri-layered scaffolding approach is adopted for the complete and concurrent regeneration of hard tissues-cementum and alveolar bone-and soft tissue-the periodontal ligament (PDL)-at a periodontal defect site. The porous tri-layered nanocomposite hydrogel scaffold is composed of chitin-poly(lactic-co-glycolic acid) (PLGA)/nanobioactive glass ceramic (nBGC)/cementum protein 1 as the cementum layer, chitin-PLGA/fibroblast growth factor 2 as the PDL layer, and chitin-PLGA/nBGC/platelet-rich plasma derived growth factors as the alveolar bone layer. The tri-layered nanocomposite hydrogel scaffold is cytocompatible and favored cementogenic, fibrogenic, and osteogenic differentiation of human dental follicle stem cells. In vivo, tri-layered nanocomposite hydrogel scaffold with/without growth factors is implanted into rabbit maxillary periodontal defects and compared with the controls at 1 and 3 months postoperatively. The tri-layered nanocomposite hydrogel scaffold with growth factors demonstrates complete defect closure and healing with new cancellous-like tissue formation on microcomputed tomography analysis. Histological and immunohistochemical analyses further confirm the formation of new cementum, fibrous PDL, and alveolar bone with well-defined bony trabeculae in comparison to the other three groups. In conclusion, the tri-layered nanocomposite hydrogel scaffold with growth factors can serve as an alternative regenerative approach to achieve simultaneous and complete periodontal regeneration. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Morphological evolution in a strained-heteroepitaxial solid droplet on a rigid substrate: Dynamical simulations

NASA Astrophysics Data System (ADS)

Ogurtani, Tarik Omer; Celik, Aytac; Oren, Ersin Emre

2010-09-01

A systematic study based on the self-consistent dynamical simulations is presented for the spontaneous evolution of an isolated thin solid droplet (bump) on a rigid substrate, which is driven by the surface drift diffusion induced by the capillary and mismatch stresses. In this study, we mainly focused on the development kinetics of the "Stranski-Krastanow" island type morphology, initiated by the nucleation route rather than the surface roughening scheme. The physicomathematical model, which bases on the irreversible thermodynamics treatment of surfaces and interfaces with singularities [T. O. Ogurtani, J. Chem. Phys. 124, 144706 (2006)], furnishes us to have autocontrol on the otherwise free-motion of the triple junction contour line between the substrate and the droplet without presuming any equilibrium dihedral contract (wetting) angles at the edges. During the development of the bell-shaped Stranski-Krastanow island through the mass accumulation at the central region of the droplet via surface drift diffusion with and/or without growth, the formation of an extremely thin wetting layer is observed. This wetting layer has a thickness of a fraction of a nanometer and covers not only the initial computation domain but also its further extension beyond the original boundaries. We also observed the formation of the multiple islands separated by shallow wetting layers above a certain threshold level of the mismatch strain and/or the size (i.e., volume) of the droplets. This threshold level depends on the initial physicochemical data and the aspect ratio (i.e., shape) of the original droplets. During the course of the simulations, we continuously tracked both the morphology (i.e., the peak height, the extension of the wetting layer beyond the domain boundaries, and the triple junction contact angle) and energetic (the global Helmholtz free energy changes associated with the total strain and surface energy variations) in the system. We observed that the morphology related quantities are reaching certain saturation limits or plateaus, when the growth mode is turned-off. On the other hand, the global Helmholtz free energy showed a steady decrease in time even though the total surface free energy of the droplet reaches a stationary value as expected a priori. Based on these observations and according to the accepted irreversible thermodynamic terminology as coined by celebrated Prigogine, we state that the Stranski-Krastanow type island morphologies are genuine stationary nonequilibrium states.

Methods for making thin layers of crystalline materials

DOEpatents

Lagally, Max G; Paskiewicz, Deborah M; Tanto, Boy

2013-07-23

Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

The state of understanding of the lithium-ion-battery graphite solid electrolyte interphase (SEI) and its relationship to formation cycling

DOE PAGES

An, Seong Jin; Li, Jianlin; Daniel, Claus; ...

2016-04-09

An in-depth review is presented on the science of lithium-ion battery (LIB) solid electrolyte interphase (SEI) formation on the graphite anode, including structure, morphology, chemical composition, electrochemistry, formation mechanism, and LIB formation cycling. During initial operation of LIBs, the SEI layer forms on the graphite surfaces, the most commonly used anode material, due to side reactions with the electrolyte solvent/salt at low electro-reduction potentials. It is accepted that the SEI layer is essential to the long-term performance of LIBs, and it also has an impact on its initial capacity loss, self-discharge characteristics, cycle life, rate capability, and safety. While themore » presence of the anode SEI layer is vital, it is difficult to control its formation and growth, as the chemical composition, morphology, and stability depend on several factors. These factors include the type of graphite, electrolyte composition, electrochemical conditions, and cell temperature. Thus, SEI layer formation and electrochemical stability over long-term operation should be a primary topic of future investigation in the development of LIB technology. We review the progression of knowledge gained about the anode SEI, from its discovery in 1979 to the current state of understanding, and covers its formation process, differences in the chemical and structural makeup when cell materials and components are varied, methods of characterization, and associated reactions with the liquid electrolyte phase. It also discusses the relationship of the SEI layer to the LIB formation step, which involves both electrolyte wetting and subsequent slow charge-discharge cycles to grow the SEI.« less

Incompressible variable-density turbulence in an external acceleration field

DOE PAGES

Gat, Ilana; Matheou, Georgios; Chung, Daniel; ...

2017-08-24

Dynamics and mixing of a variable-density turbulent flow subject to an externally imposed acceleration field in the zero-Mach-number limit are studied in a series of direct numerical simulations. The flow configuration studied consists of alternating slabs of high- and low-density fluid in a triply periodic domain. Density ratios in the range ofmore » $$1.05\\leqslant R\\equiv \\unicode[STIX]{x1D70C}_{1}/\\unicode[STIX]{x1D70C}_{2}\\leqslant 10$$are investigated. The flow produces temporally evolving shear layers. A perpendicular density–pressure gradient is maintained in the mean as the flow evolves, with multi-scale baroclinic torques generated in the turbulent flow that ensues. For all density ratios studied, the simulations attain Reynolds numbers at the beginning of the fully developed turbulence regime. An empirical relation for the convection velocity predicts the observed entrainment-ratio and dominant mixed-fluid composition statistics. Two mixing-layer temporal evolution regimes are identified: an initial diffusion-dominated regime with a growth rate$${\\sim}t^{1/2}$$followed by a turbulence-dominated regime with a growth rate$${\\sim}t^{3}$$. In the turbulent regime, composition probability density functions within the shear layers exhibit a slightly tilted (‘non-marching’) hump, corresponding to the most probable mole fraction. In conclusion, the shear layers preferentially entrain low-density fluid by volume at all density ratios, which is reflected in the mixed-fluid composition.« less

Incompressible variable-density turbulence in an external acceleration field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gat, Ilana; Matheou, Georgios; Chung, Daniel

Dynamics and mixing of a variable-density turbulent flow subject to an externally imposed acceleration field in the zero-Mach-number limit are studied in a series of direct numerical simulations. The flow configuration studied consists of alternating slabs of high- and low-density fluid in a triply periodic domain. Density ratios in the range ofmore » $$1.05\\leqslant R\\equiv \\unicode[STIX]{x1D70C}_{1}/\\unicode[STIX]{x1D70C}_{2}\\leqslant 10$$are investigated. The flow produces temporally evolving shear layers. A perpendicular density–pressure gradient is maintained in the mean as the flow evolves, with multi-scale baroclinic torques generated in the turbulent flow that ensues. For all density ratios studied, the simulations attain Reynolds numbers at the beginning of the fully developed turbulence regime. An empirical relation for the convection velocity predicts the observed entrainment-ratio and dominant mixed-fluid composition statistics. Two mixing-layer temporal evolution regimes are identified: an initial diffusion-dominated regime with a growth rate$${\\sim}t^{1/2}$$followed by a turbulence-dominated regime with a growth rate$${\\sim}t^{3}$$. In the turbulent regime, composition probability density functions within the shear layers exhibit a slightly tilted (‘non-marching’) hump, corresponding to the most probable mole fraction. In conclusion, the shear layers preferentially entrain low-density fluid by volume at all density ratios, which is reflected in the mixed-fluid composition.« less

Palladium silicide formation under the influence of nitrogen and oxygen impurities

NASA Technical Reports Server (NTRS)

Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

1985-01-01

The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

The effect of modifying rooting depths and nitrification inhibitors on nutrient uptake from organic biogas residues in maize

NASA Astrophysics Data System (ADS)

Dietrich, Charlotte C.; Koller, Robert; Nagel, Kerstin A.; Schickling, Anke; Schrey, Silvia D.; Jablonowski, Nicolai D.

2017-04-01

Optimizing the application of and nutrient uptake from organic nutrient sources, such as the nutrient-rich residues ("digestates") from the biogas industry, is becoming a viable option in remediating fertility on previously unsuitable soils for agricultural utilization. Proposedly, concurrent changes in root system architecture and functioning could also serve as the basis of future phytomining approaches. Herein, we evaluate the effect of spatial nutrient availability and nitrification on maize root architecture and nutrient uptake. We test these effects by applying maize-based digestate at a rate of 170 kg/ha in layers of varying depths (10, 25 and 40 cm) and through either the presence or absence of nitrification inhibitors. In order to regularly monitor above- and below-ground plant biomass production, we used the noninvasive phenotyping platform, GROWSCREEN-Rhizo at the Forschungszentrum Jülich, using rhizotrons (Nagel et al., 2012). Measured parameters included projected plant height and leaf area, as well as root length and spatial distribution. Additionally, root diameters were quantified after the destructive harvest, 21 days after sowing (DAS). Spatial nutrient availability significantly affected root system architecture, as for example root system size -the area occupied by roots- increased alongside nutrient layer depths. Fertilization also positively affected root length density (RLD). Within fertilized layers, the presence of nitrification inhibitors increased RLD by up to 30% and was most pronounced in the fine root biomass fraction (0.1 to 0.5mm). Generally, nitrification inhibitors promoted early plant growth by up to 45% across treatments. However, their effect varied in dependence of layer depths, leading to a time-delayed response in deeper layers, accounting for plants having to grow significantly longer roots in order to reach fertilized substrate. Nitrification inhibitors also initiated the comparatively early on-set of growth differences in shallower layers, where their effect on plant growth was temporarily most pronounced. At final harvest (21 DAS) however, effects of nitrification inhibitors on plant height were visible only in deeper layers. Furthermore, the statistically significant interaction between the factors time x layer depths x nitrification inhibitors underlined the dynamic influence of nitrification inhibitors on plant growth over time and across rooting depths. This study offers insights into optimizing nutrient uptake and plant productivity by (re-) using residues from the biogas industry. It is among the first to monitor and try to explain the dynamics of nitrification inhibitors on root system architecture over time. A modified N-fertilization application scheme might also serve as a promising tool in optimizing phytoremediation and phytomining techniques through predictably altering root structure in fertilized layers. References: Nagel, K. A. ; Putz, A. ; Gilmer, F. ; Heinz, K. ; Fischbach, A. ; Pfeifer, J. ; Faget, M. ; Blossfeld, S. ; Ernst, M. ; Dimaki, C. ; Kastenholz, B. ; Kleinert, A.-K. ; Galinski, A. ; Scharr, H. ; Fiorani, F. ; Schurr, U. (2012): GROWSCREEN-Rhizo is a novel phenotyping robot enabling simultaneous measurements of root and shoot growth for plants grown in soil-filled rhizotrons.
Functional plant biology 39(11), 891-904.

Fabrication of photovoltaic laser energy converterby MBE

NASA Technical Reports Server (NTRS)

Lu, Hamilton; Wang, Scott; Chan, W. S.

1993-01-01

A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special high-temperature electron-beam (e-beam) sources were developed especially for the MBE growth of the junctions and CoSi2 layers. Making use of the small (greater than 1.2 percent) lattice mismatch between CoSi2 and Si layers, high-quality and pinhole-free epilayers were achieved, providing a capability of fabricating all the junctions and connecting layers as a single growth process with one pumpdown. Well-defined multiple p-n junctions connected by CoSi2 layers were accomplished by employing a low growth temperature (greater than 700 C) and a low growth rate (less than 0.5 microns/hour). Producing negligible interdiffusion, the low growth temperature and rate also produced negligible pinholes in the CoSi2 layers. For the first time, a stack of three p-n junctions connected by two 10(exp -5) Ohm-cm CoSi2 layers was achieved, meeting the high conversion efficiency requirement. This process can now be optimized for high growth rate to form a practical converter with 10 p-n junctions in the stack.

Laws controlling crystallization and melting in bulk polymers

NASA Astrophysics Data System (ADS)

Strobl, Gert

2007-03-01

When the fundamentals of the structure of semi-crystalline polymers - layer-like crystallites with fold surfaces being embedded in an amorphous matrix - were revealed in the Fifties, considerations about the mechanism of formation started immediately. In the Sixties and Seventies, they became a major field of research and a focus of interest. In the years which followed the approach put forward by Hoffman, Lauritzen and their co-workers [1] gained superiority. The picture envisaged by the treatment - a crystalline lamella with an ordered fold surface and smooth lateral faces, growing layer by layer with a secondary nucleation as rate determining step - is easy to grasp and yields simple relationships. Supercooling below the equilibrium melting point Tf^∞ is the control parameter determining both the thickness dc and the lateral growth rate of the crystallites G. Experiments carried out during the last decade provided new insights and are now completely changing the understanding. They showed in particular - that dc is inversely proportional to the distance to a temperature Tc^∞ distinctly above Tf^∞- that the activation energy determining G diverges at a temperature Tzero clearly below Tf^∞.Further simple relationships concern- recrystallization processes: dc is again inversely proportional to the distance to Tc^∞- the extension of ordered regions within the lamellar crystallites: it is proportional to dc. We interpret the observations as indication that the pathway followed in the growth of polymer crystallites includes an intermediate phase of mesomorphic character. A thin layer with mesomorphic inner structure forms between the lateral crystal face and the melt, stabilized by epitaxial forces. The first step in the growth process is an attachment of chain sequences from the melt onto the growth face of the mesomorphic layer. The high mobility of the chains in the layer allows a spontaneous thickening, up to a critical thickness, where the layer solidifies under formation of block-like crystallites. The last step is a perfectioning of the crystallites, leading to a further stabilization. We constructed a thermodynamic scheme dealing with the transitions between melt, mesomorphic layers and lamellar crystallites, assuming for the latter ones that they exist both in an initial native and a final stabilized form. Tc^∞ and Tzero are identified with the temperatures Tmc and Tam of the (hidden) transitions mesomorphic -> crystalline and amorphous-> mesomorphic, respectively. Application of the scheme in a quantitative evaluation of small angle X-ray scattering and calorimetric results yields the equilibrium transition temperatures between the various phases, latent heats of transition and surface free energies [2]. [1] J.D Hoffman, G.T Davis, and J.I. Lauritzen. In Treatise on Solid State Chemistry Vol.3, N.B.Hannay Ed., page 497. Plenum, 1976. [2] G. Strobl.Eur.Phys.J.E, 18:295, 2005.

Influence of interface ply orientation on fatigue damage of adhesively bonded composite joints

NASA Technical Reports Server (NTRS)

Johnson, W. S.; Mall, S.

1985-01-01

An experimental study of cracked-lap-shear specimens was conducted to determine the influence of adherend stacking sequence on debond initiation and damage growth in a composite-to-composite bonded joint. Specimens consisted of quasi-isotropic graphite/epoxy adherends bonded together with either FM-300 or EC 3445 adhesives. The stacking sequence of the adherends was varied such that 0 deg, 45 deg, or 90 deg plies were present at the adherend-adhesive interfaces. Fatigue damage initiated in the adhesive layer in those specimens with 0 deg nd 45 deg interface plies. Damage initiated in the form of ply cracking in the strap adherend for the specimens with 90 deg interface plies. The fatigue-damage growth was in the form of delamination within the composite adherends for specimens with the 90 deg and 45 deg plies next to the adhesive, while debonding in the adhesive resulted for the specimens with 0 deg plies next to the adhesive. Those joints with the 0 deg and 45 deg plies next to either adhesive has essentially the same fatigue-damage-initiation stress levels. These stress levels were 13 and 71 percent higher, respectively, than those for specimens with 90 deg plies next to the EC 3445 and FM-300 adhesives.

Influence of interface ply orientation on fatigue damage of adhesively bonded composite joints

NASA Technical Reports Server (NTRS)

Johnson, W. S.; Mall, S.

1986-01-01

An experimental study of cracked-lap-shear specimens was conducted to determine the influence of adherend stacking sequence on debond initiation and damage growth in a composite-to-composite bonded joint. Specimens consisted of quasi-isotropic graphite/epoxy adherends bonded together with either FM-300 or EC 3445 adhesives. The stacking sequence of the adherends was varied such that 0 deg, 45 deg, or 90 deg plies were present at the adherend-adhesive interfaces. Fatigue damage initiated in the adhesive layer in those specimens with 0 deg and 45 deg interface plies. Damaage initiated in the form of ply cracking in the strap adherend for the specimens with 90 deg interface plies. The fatigue-damage growth was in the form of delamination within the composite adherends for specimens with the 90 deg and 45 deg plies next to the adhesive, while debonding in the adhesive resulted for the specimens with 0 deg plies next to the adhesive. Those joints with the 0 deg and 45 deg plies next to either adhesive has essentially the same fatigue-damage-initiation stress levels. These stress levels were 13 and 71 percent higher, respectively, than those for specimens with 90 deg plies next to the EC 3445 and FM-300 adhesives.

Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vishwanath, Suresh; Liu, Xinyu; Rouvimov, Sergei

2016-01-06

Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe 2 by MBE, MoSe 2 on Bi 2Se 3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi 2Te 3 andmore » a triple atomic layer of MoTe 2. In conclusion, reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.« less

Low temperature laser molecular beam epitaxy and characterization of AlGaN epitaxial layers

NASA Astrophysics Data System (ADS)

Tyagi, Prashant; Ch., Ramesh; Kushvaha, S. S.; Kumar, M. Senthil

2017-05-01

We have grown AlGaN (0001) epitaxial layers on sapphire (0001) by using laser molecular beam epitaxy (LMBE) technique. The growth was carried out using laser ablation of AlxGa1-x liquid metal alloy under r.f. nitrogen plasma ambient. Before epilayer growth, the sapphire nitradation was performed at 700 °C using r.f nitrogen plasma followed by AlGaN layer growth. The in-situ reflection high energy electron diffraction (RHEED) was employed to monitor the substrate nitridation and AlGaN epitaxial growth. High resolution x-ray diffraction showed wurtzite hexagonal growth of AlGaN layer along c-axis. An absorption bandgap of 3.97 eV is obtained for the grown AlGaN layer indicating an Al composition of more than 20 %. Using ellipsometry, a refractive index (n) value of about 2.19 is obtained in the visible region.

Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate.

PubMed

Ma, Y J; Zhong, Z; Yang, X J; Fan, Y L; Jiang, Z M

2013-01-11

We investigated the molecular beam epitaxy growth of three-dimensional (3D) Ge quantum dot crystals (QDCs) on periodically pit-patterned Si substrates. A series of factors influencing the growth of QDCs were investigated in detail and the optimized growth conditions were found. The growth of the Si buffer layer and the first quantum dot (QD) layer play a key role in the growth of QDCs. The pit facet inclination angle decreased with increasing buffer layer thickness, and its optimized value was found to be around 21°, ensuring that all the QDs in the first layer nucleate within the pits. A large Ge deposition amount in the first QD layer favors strain build-up by QDs, size uniformity of QDs and hence periodicity of the strain distribution; a thin Si spacer layer favors strain correlation along the growth direction; both effects contribute to the vertical ordering of the QDCs. Results obtained by atomic force microscopy and cross-sectional transmission electron microscopy showed that 3D ordering was achieved in the Ge QDCs with the highest ever areal dot density of 1.2 × 10(10) cm(-2), and that the lateral and the vertical interdot spacing were ~10 and ~2.5 nm, respectively.

Small Crack Growth and Fatigue Life Predictions for High-Strength Aluminium Alloys. Part 1; Experimental and Fracture Mechanics Analysis

NASA Technical Reports Server (NTRS)

Wu, X. R.; Newman, J. C.; Zhao, W.; Swain, M. H.; Ding, C. F.; Phillips, E. P.

1998-01-01

The small crack effect was investigated in two high-strength aluminium alloys: 7075-T6 bare and LC9cs clad alloy. Both experimental and analytical investigations were conducted to study crack initiation and growth of small cracks. In the experimental program, fatigue tests, small crack and large crack tests A,ere conducted under constant amplitude and Mini-TWIST spectrum loading conditions. A pronounced small crack effect was observed in both materials, especially for the negative stress ratios. For all loading conditions, most of the fatigue life of the SENT specimens was shown to be crack propagation from initial material defects or from the cladding layer. In the analysis program, three-dimensional finite element and A weight function methods were used to determine stress intensity factors and to develop SIF equations for surface and corner cracks at the notch in the SENT specimens. A plastisity-induced crack-closure model was used to correlate small and large crack data, and to make fatigue life predictions, Predicted crack-growth rates and fatigue lives agreed well with experiments. A total fatigue life prediction method for the aluminum alloys was developed and demonstrated using the crack-closure model.

Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor-liquid-solid technique

NASA Astrophysics Data System (ADS)

LeBoeuf, J. L.; Brodusch, N.; Gauvin, R.; Quitoriano, N. J.

2014-12-01

A novel method has been optimized so that adhesion layers are no longer needed to reliably deposit patterned gold structures on amorphous substrates. Using this technique allows for the fabrication of amorphous oxide templates known as micro-crucibles, which confine a vapor-liquid-solid (VLS) catalyst of nominally pure gold to a specific geometry. Within these confined templates of amorphous materials, faceted silicon crystals have been grown laterally. The novel deposition technique, which enables the nominally pure gold catalyst, involves the undercutting of an initial chromium adhesion layer. Using electron backscatter diffraction it was found that silicon nucleated in these micro-crucibles were 30% single crystals, 45% potentially twinned crystals and 25% polycrystals for the experimental conditions used. Single, potentially twinned, and polycrystals all had an aversion to growth with the {1 0 0} surface parallel to the amorphous substrate. Closer analysis of grain boundaries of potentially twinned and polycrystalline samples revealed that the overwhelming majority of them were of the 60° Σ3 coherent twin boundary type. The large amount of coherent twin boundaries present in the grown, two-dimensional silicon crystals suggest that lateral VLS growth occurs very close to thermodynamic equilibrium. It is suggested that free energy fluctuations during growth or cooling, and impurities were the causes for this twinning.

Application of the Prunus spp. Cyanide Seed Defense System onto Wheat: Reduced Insect Feeding and Field Growth Tests.

PubMed

Mora, Carlos A; Halter, Jonas G; Adler, Cornel; Hund, Andreas; Anders, Heidrun; Yu, Kang; Stark, Wendelin J

2016-05-11

Many crops are ill-protected against insect pests during storage. To protect cereal grains from herbivores during storage, pesticides are often applied. While pesticides have an undoubtable functionality, increasing concerns are arising about their application. In the present study, we investigated a bioinspired cyanogenic grain coating with amygdalin as cyanogenic precursor mimicking the feeding-triggered release of hydrogen cyanide (HCN) found for example in bitter almonds. The multilayer coating consisted of biodegradable polylactic acid with individual layers containing amygdalin or β-glucosidase which is capable of degrading amygdalin to HCN. This reaction occurred only when the layers were ruptured, e.g., by a herbivore attack. Upon feeding coated cyanogenic wheat grains to Tenebrio molitor (mealworm beetle), Rhizopertha dominica (lesser grain borer), and Plodia interpunctella (Indianmeal moth), their reproduction as well as consumption rate were significantly reduced, whereas germination ability increased compared to noncoated grains. In field experiments, we observed an initial growth delay compared to uncoated grains which became negligible at later growth stages. The here shown strategy to artificially apply a naturally occurring defense mechanisms could be expanded to other crops than wheat and has the potential to replace certain pesticides with the benefit of complete biodegradability and increased safety during storage.

Constituency and origins of cyclic growth layers in pelecypod shells, part 1

NASA Technical Reports Server (NTRS)

Berry, W. B. N.

1972-01-01

Growth layers occurring in shells of 98 species of pelecypods were examined microscopically in thin section and as natural and etched surfaces. Study began with shells of eleven species known from life history investigations to have annual cycles of growth. Internal microstructural features of the annual layers in these shells provided criteria for recognition of similar, apparently annual shell increments in eighty-six of eighty-seven other species. All of the specimens feature growth laminae, commonly on the order of 50 microns in thickness. The specimens from shallow marine environments show either a clustering of growth laminae related to the formation of concentric ridges or minor growth bands on the external shell surface. Based on observations of the number of growth laminae and clusters per annual-growth layer, it was hypothesised that the subannual increments may be related to daily and fortnightly (and in some cases monthly) cycles in the environment. Possible applications of the paleogrowth method in the fields of paleoecology and paleoclimatology are discussed.

Estimation of evaporation from equilibrium diurnal boundary layer humidity

NASA Astrophysics Data System (ADS)

Salvucci, G.; Rigden, A. J.; Li, D.; Gentine, P.

2017-12-01

Simplified conceptual models of the convective boundary layer as a well mixed profile of potential temperature (theta) and specific humidity (q) impinging on an initially stably stratified linear potential temperature profile have a long history in atmospheric sciences. These one dimensional representations of complex mixing are useful for gaining insights into land-atmosphere interactions and for prediction when state of the art LES approaches are infeasible. As previously shown (e.g. Betts), if one neglects the role of q in bouyancy, the framework yields a unique relation between mixed layer Theta, mixed layer height (h), and cumulative sensible heat flux (SH) throughout the day. Similarly assuming an initially q profile yields a simple relation between q, h, and cumulative latent heat flux (LH). The diurnal dynamics of theta and q are strongly dependent on SH and the initial lapse rates of theta (gamma_thet) and q (gamma q). In the estimation method proposed here, we further constrain these relations with two more assumptions: 1) The specific humidity is the same at the start of the period of boundary layer growth and at the collapse; and 2) Once the mixed layer reaches the LCL, further drying occurs proportionally to the deardorff convective velocity scale (omega) multiplied by q. Assumption (1) is based on the idea that below the cloud layer, there are no sinks of moisture within the mixed layer (neglecting lateral humidity divergence). Thus the net mixing of dry air aloft with evaporation from the surface must balance. Inclusion of the simple model of moisture loss above the LCL into the bulk-CBL model allows definition of an equilibrium humidity (q) condition at which the diurnal cycle of q repeats (i.e. additions of q from surface balance entrainment of dry air from above). Surprisingly, this framework allows estimation of LH from q, theta, and estimated net radiation by solving for the value of Evaporative Fraction (EF) for which the diurnal cycle of q repeats. Three parameters need specification: cloud area fraction, entrainment factor, and morning lapse rate. Surprisingly, a single set of values for these parameters are adequate to estimate EF at over 70 tested Ameriflux sites to within about 20%, though improvements are gained using a single regression model for gamma_thet that has been fitted to radiosonde data.

Atomic layer deposition and post-growth thermal annealing of ultrathin MoO3 layers on silicon substrates: Formation of surface nanostructures

NASA Astrophysics Data System (ADS)

Liu, Hongfei; Yang, Ren Bin; Yang, Weifeng; Jin, Yunjiang; Lee, Coryl J. J.

2018-05-01

Ultrathin MoO3 layers have been grown on Si substrates at 120 °C by atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo(CO)6] and ozone (O3) as the Mo- and O-source precursors, respectively. The ultrathin films were further annealed in air at Tann = 550-750 °C for 15 min. Scanning-electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy have been employed to evaluate the morphological and elemental properties as well as their evolutions upon annealing of the thin films. They revealed an interfacial SiOx layer in between the MoO3 layer and the Si substrate; this SiOx layer converted into SiO2 during the annealing; and the equivalent thickness of the MoO3 (SiO2) layer decreased (increased) with the increase in Tann. Particles with diameters smaller than 50 nm emerged at Tann = 550 °C and their sizes (density) were reduced (increased) by increasing Tann to 650 °C. A further increase of Tann to 750 °C resulted in telephone-cord-like MoO3 structures, initiated from isolated particles on the surface. These observations have been discussed and interpreted based on temperature-dependent atomic interdiffusions, surface evaporations, and/or melting of MoO3, which shed new light on ALD MoO3 towards its electronic applications.

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Feasibility of vermicomposting dairy biosolids using a modified system to avoid earthworm mortality.

PubMed

Nogales, R; Elvira, C; Benítez, E; Thompson, R; Gomez, M

1999-01-01

A laboratory study was conducted to examine the feasibility of vermicomposting dairy biosolids (dairy sludge), either alone or with either of the bulking agents-cereal straw or wood shavings, using the epigeic earthworm-Eisinea andrei. Earthworms added directly to these three substrates died within 48 hours. A system was developed to overcome the toxic effect of unprocessed dairy biosolids. The substrates were placed over a layer of vermicomposted sheep manure into which the earthworms were inoculated. Within two weeks, all earthworms were within the upper layer of substrate. Compared to sheep manure which is a favourable substrate for vermicomposting, the three substrates containing dairy biosolids were more effective in supporting earthworm growth and reproduction. The final products obtained after 63 days of vermicomposting had 39-53% less organic carbon than the initial substrates. Organic fractionation indicated that vermicomposting increased the stability of the materials to biological decomposition. The vermicomposts obtained from the three substrates with dairy biosolids had low heavy metal contents and electrical conductivities, and did not inhibit plant growth when compared with a commercial vermicompost in a bioassay.

Dendrite-Free Nanocrystalline Zinc Electrodeposition from an Ionic Liquid Containing Nickel Triflate for Rechargeable Zn-Based Batteries.

PubMed

Liu, Zhen; Cui, Tong; Pulletikurthi, Giridhar; Lahiri, Abhishek; Carstens, Timo; Olschewski, Mark; Endres, Frank

2016-02-18

Metallic zinc is a promising anode material for rechargeable Zn-based batteries. However, the dendritic growth of zinc has prevented practical applications. Herein it is demonstrated that dendrite-free zinc deposits with a nanocrystalline structure can be obtained by using nickel triflate as an additive in a zinc triflate containing ionic liquid. The formation of a thin layer of Zn-Ni alloy (η- and γ-phases) on the surface and in the initial stages of deposition along with the formation of an interfacial layer on the electrode strongly affect the nucleation and growth of zinc. A well-defined and uniform nanocrystalline zinc deposit with particle sizes of about 25 nm was obtained in the presence of Ni(II) . Further, it is shown that the nanocrystalline Zn exhibits a high cycling stability even after 50 deposition/stripping cycles. This strategy of introducing an inorganic metal salt in ionic liquid electrolytes can be considered as an efficient way to obtain dendrite-free zinc. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of substrates and rutile seed layers on the assembly of hydrothermally grown rutile TiO2 nanorod arrays

NASA Astrophysics Data System (ADS)

Kalb, Julian; Dorman, James A.; Folger, Alena; Gerigk, Melanie; Knittel, Vanessa; Plüisch, Claudia S.; Trepka, Bastian; Lehr, Daniela; Chua, Emily; Goodge, Berit H.; Wittemann, Alexander; Scheu, Christina; Polarz, Sebastian; Schmidt-Mende, Lukas

2018-07-01

Rutile TiO2 nanorod arrays (NRAs) are applicable in various prospective technologies. Hydrothermal methods present a simple technique to fabricate such NRAs. In this report, we present the fabrication of seed layers for the hydrothermal growth of rutile TiO2 nanorods via sputter deposition, electron-beam evaporation, and sol-gel method and study the influence of each on the growth behavior. To satisfy the requirements of numerous applications, p-type silicon, platinum, levitating carbon membranes, a template made of polystyrene spheres, and commercial fluorine tin oxide (FTO) were employed as substrates. We document the structural properties of the TiO2 seed layers and describe the relationship between the characteristics of the seed crystals, the growth evolution, and the appearance of as-grown nanorods. Various growth stages of rutile TiO2 nanorods are compared depending on whether they are grown on polycrystalline TiO2 or FTO seed layers. In both cases, a homogenous TiO2 bottom layer is formed at the seed layer/substrate interface, which is essential for electronic applications such as hybrid solar cells. Detached NRAs illustrate the effect of rutile FTO and TiO2 on the porosity of this bottom layer. Further details about the formation process of this layer are obtained from the growth on confined seed layers fabricated by electron-beam lithography.

MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate

NASA Astrophysics Data System (ADS)

Reznik, R. R.; Kotlyar, K. P.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Nikitina, E. V.; Cirlin, G. E.

2017-11-01

The fundamental possibility of the growth of GaN layers by molecular-beam epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN layers has been demonstrated for the first time. Morphological properties of the resulting system have been studied.

The flaw-detected coating and its applications in R&M of aircrafts

NASA Astrophysics Data System (ADS)

Hu, Feng; Liu, Mabao; Lü, Zhigang

2009-07-01

A monitoring method called ICM (Intelligent Coating Monitoring), which is based mainly on the intelligent coating sensors, has the capability to monitor crack initiation and growth in fatigue test coupons has been suggested in this study. The intelligent coating sensor is normally consisted of three layers: driving layer, sensing layer and protective layer where necessary. Fatigue tests with ICM for various materials demonstrate the capability to detect cracks with l<300μm, corresponding to the increment of the sensing layer's resistance at the level of 0.05Ω. Also, ICM resistance measurements correlate with crack length, permitting crack length monitoring. Numerous applications are under evaluation for ICM in difficult-to-access locations on commercial and military aircrafts. The motivation for the permanently flaw-detected coating monitoring is either (i) to replace an existing inspection that requires substantial disassembly and surface preparation (e.g. inside the fuel tank of an aircraft), or (ii) to take advantage of early detection and apply less invasive life-extension repairs, as well as reduce interruption of service when flaws are detected. Implementation of ICM is expected to improve fleet management practices and modify damage tolerance assumptions.

Velocity Data in a Fully Developed Wind Turbine Array Boundary Layer

NASA Astrophysics Data System (ADS)

Turner, John; Wosnik, Martin

2016-11-01

Results are reported from an experimental study of an array of porous disks simulating offshore wind turbines. The disks mimic power extraction of similarly scaled wind turbines via drag matching, and the array consists of 19x5 disks of 0.25 m diameter. The study was conducted in the UNH Flow Physics Facility (FPF), which has test section dimensions of 6.0 m wide, 2.7 m high and 72.0 m long. The FPF can achieve a boundary layer height on the order of 1 m at the entrance of the wind turbine array which puts the model turbines in the bottom third of the boundary layer, which is typical of field application. Careful consideration was given to an expanded uncertainty analysis, to determine possible measurements in this type of flow. For a given configuration (spacing, initial conditions, etc.), the velocity levels out and the wind farm approaches fully developed behavior, even within the maintained growth of the simulated atmospheric boundary layer. Benchmark pitot tube data was acquired in vertical profiles progressing streamwise behind the centered column at every row in the array.

Great enhancement of pyroelectric properties for Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3} films on Pt-Si substrates by inserting a self-buffered layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, C. G.; Li, Y. R.; Zhu, J.

2009-02-15

(100)-Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3} (BST) films were deposited on Pt/Ti/SiO{sub 2}/Si substrates using a low-temperature self-buffered layer. X-ray diffraction and atomic force microscope investigations show that the microstructure of BST films strongly depends on surface morphology of annealed self-buffered layer. The mechanism of nucleus formation and the growth initiation of BST films on self-buffered layers were proposed. It was found that the pyroelectric properties of BST films can be greatly enhanced. The pyroelectric coefficient and material merit figure of (100)-BST films are 1.16x10{sup 4} {mu}C m{sup -2} K{sup -1} and 2.18x10{sup -4} Pa{sup -1/2}, respectively. The detectivity of 9.4x10{sup 7}more » cm Hz{sup 1/2} W{sup -1} was obtained in the (100)-BST film capacitors thermally isolated by 500 nm SiO{sub 2} films.« less

Wetted foam liquid fuel ICF target experiments

DOE PAGES

Olson, R. E.; Leeper, R. J.; Yi, S. A.; ...

2016-05-26

We are developing a new NIF experimental platform that employs wetted foam liquid fuel layer ICF capsules. We will use the liquid fuel layer capsules in a NIF sub-scale experimental campaign to explore the relationship between hot spot convergence ratio (CR) and the predictability of hot spot formation. DT liquid layer ICF capsules allow for flexibility in hot spot CR via the adjustment of the initial cryogenic capsule temperature and, hence, DT vapor density. Our hypothesis is that the predictive capability of hot spot formation is robust and 1D-like for a relatively low CR hot spot (CR~15), but will becomemore » less reliable as hot spot CR is increased to CR>20. Simulations indicate that backing off on hot spot CR is an excellent way to reduce capsule instability growth and to improve robustness to low-mode x-ray flux asymmetries. In the initial experiments, we will test our hypothesis by measuring hot spot size, neutron yield, ion temperature, and burn width to infer hot spot pressure and compare to predictions for implosions with hot spot CR's in the range of 12 to 25. Larger scale experiments are also being designed, and we will advance from sub-scale to full-scale NIF experiments to determine if 1D-like behavior at low CR is retained as the scale-size is increased. The long-term objective is to develop a liquid fuel layer ICF capsule platform with robust thermonuclear burn, modest CR, and significant α-heating with burn propagation.« less

Root growth dynamics linked to above-ground growth in walnut (Juglans regia).

PubMed

Contador, Maria Loreto; Comas, Louise H; Metcalf, Samuel G; Stewart, William L; Porris Gomez, Ignacio; Negron, Claudia; Lampinen, Bruce D

2015-07-01

Examination of plant growth below ground is relatively scant compared with that above ground, and is needed to understand whole-plant responses to the environment. This study examines whether the seasonal timing of fine root growth and the spatial distribution of this growth through the soil profile varies in response to canopy manipulation and soil temperature. Plasticity in the seasonal timing and vertical distribution of root production in response to canopy and soil water manipulation was analysed in field-grown walnut (Juglans regia 'Chandler') using minirhizotron techniques. Root production in walnuts followed a unimodal curve, with one marked flush of root growth starting in mid-May, with a peak in mid-June. Root production declined later in the season, corresponding to increased soil temperature, as well as to the period of major carbohydrate allocation to reproduction. Canopy and soil moisture manipulation did not influence the timing of root production, but did influence the vertical distribution of roots through the soil profile. Water deficit appeared to promote root production in deeper soil layers for mining soil water. Canopy removal appeared to promote shallow root production. The findings of this study add to growing evidence that root growth in many ecosystems follows a unimodal curve with one marked flush of root growth in coordination with the initial leaf flush of the season. Root vertical distribution appeared to have greater plasticity than timing of root production in this system, with temperature and/or carbohydrate competition constraining the timing of root growth. Effects on root distribution can have serious impacts on trees, with shallow rooting having negative impacts in years with limited soil water or positive impacts in years with wet springs, and deep rooting having positive impacts on soil water mining from deeper soil layers but negative impacts in years with wet springs. © The Author 2015. Published by Oxford University Press on behalf of the Annals of Botany Company. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Research on spatial distribution of photosynthetic characteristics of Winter Wheat

NASA Astrophysics Data System (ADS)

Yan, Q. Q.; Zhou, Q. Y.; Zhang, B. Z.; Han, X.; Han, N. N.; Li, S. M.

2018-03-01

In order to explore the spatial distribution of photosynthetic characteristics of winter wheat leaf, the photosynthetic rate on different parts of leaf (leaf base-leaf middle-leaf apex) and that on each canopy (top layer-middle layer-bottom layer) leaf during the whole growth period of winter wheat were measured. The variation of photosynthetic rate with PAR and the spatial distribution of winter wheat leaf during the whole growth periods were analysed. The results showed that the photosynthetic rate of different parts of winter wheat increased with the increase of PAR, which was showed as leaf base>leaf middle>leaf apex. In the same growth period, photosynthetic rate in different parts of the tablet was showed as leaf middle>leaf base>leaf apex. For the different canopy layer of winter wheat, the photosynthetic rate of the top layer leaf was significantly greater than that of the middle layer and lower layer leaf. The photosynthetic rate of the top layer leaf was the largest in the leaf base position. The photosynthetic rate of leaf of the same canopy layer at different growth stages were showed as tasseling stage >grain filling stage > maturation stage.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ast, D.G.

Research focused on control of misfit dislocations in strained epitaxial layers of GaAs through prepatterning of the substrate. Patterning and etching trenches into GaAs substrates before epitaxial growth results in nonplanar wafer surface, which makes device fabrication more difficult. Selective ion damaging the substrate prior to growth was investigated. The question of whether the overlayer must or must not be discontinuous was addressed. The third research direction was to extend results from molecular beam epitaxially grown material to organometallic chemical vapor deposition. Effort was increased to study the patterning processes and the damage it introduces into the substrate. The researchmore » program was initiated after the discovery that 500-eV dry etching in GaAs damages the substrate much deeper than the ion range.« less

Full three-dimensional morphology evolution of amorphous thin films for atomic layer deposition

NASA Astrophysics Data System (ADS)

Jin, Lingpeng; Li, Yawei; Hu, Zhigao; Chu, Junhao

2018-04-01

We introduce a Monte Carlo model based on random deposition and diffusion limited aggregation in order to study the morphological evolution of deposition of nanofilm, which is difficult to carry out by the experimental methods. The instantaneous evolution of morphology and the corresponding parameters are observed when employing a novel perspective, modeling the aggregation of nanoscale units. Despite simplifying the chemical details, the simulation results qualitatively describe experiments with bulky precursors, and the strong dependence of growth rate on steric hindrance is obtained. Moreover, the well know behavior that the delay before steady growth is accurately predicted and analyzed based solely on modeling. Through this work, the great influence of steric hindrance on the initial stage of ALD is described.

Direct observation of bi-alkali antimonide photocathodes growth via in operando x-ray diffraction studies

DOE PAGES

Ruiz-Osés, M.; Schubert, S.; Attenkofer, K.; ...

2014-12-01

Alkali antimonides have a long history as visible-light-sensitive photocathodes. This study focuses on the process of fabrication of the bi-alkali photocathodes, K 2CsSb. In-situ synchrotron x-ray diffraction and photoresponse measurements were used to monitor phase evolution during sequential photocathode growth mode on Si(100) substrates. The amorphous-to-crystalline transition for the initial antimony layer was observed at a film thickness of 40 Å . The antimony crystalline structure dissolved upon potassium deposition, eventually recrystallizing upon further deposition into K-Sb crystalline modifications. This transition, as well as the conversion of potassium antimonide to K 2CsSb upon cesium deposition, is correlated with changes inmore » the quantum efficiency.« less

A Study of the Unstable Modes in High Mach Number Gaseous Jets and Shear Layers

NASA Astrophysics Data System (ADS)

Bassett, Gene Marcel

1993-01-01

Instabilities affecting the propagation of supersonic gaseous jets have been studied using high resolution computer simulations with the Piecewise-Parabolic-Method (PPM). These results are discussed in relation to jets from galactic nuclei. These studies involve a detailed treatment of a single section of a very long jet, approximating the dynamics by using periodic boundary conditions. Shear layer simulations have explored the effects of shear layers on the growth of nonlinear instabilities. Convergence of the numerical approximations has been tested by comparing jet simulations with different grid resolutions. The effects of initial conditions and geometry on the dominant disruptive instabilities have also been explored. Simulations of shear layers with a variety of thicknesses, Mach numbers and densities perturbed by incident sound waves imply that the time for the excited kink modes to grow large in amplitude and disrupt the shear layer is taug = (546 +/- 24) (M/4)^{1.7 } (Apert/0.02) ^{-0.4} delta/c, where M is the jet Mach number, delta is the half-width of the shear layer, and A_ {pert} is the perturbation amplitude. For simulations of periodic jets, the initial velocity perturbations set up zig-zag shock patterns inside the jet. In each case a single zig-zag shock pattern (an odd mode) or a double zig-zag shock pattern (an even mode) grows to dominate the flow. The dominant kink instability responsible for these shock patterns moves approximately at the linear resonance velocity, nu_ {mode} = cextnu_ {relative}/(cjet + c_ {ext}). For high resolution simulations (those with 150 or more computational zones across the jet width), the even mode dominates if the even penetration is higher in amplitude initially than the odd perturbation. For low resolution simulations, the odd mode dominates even for a stronger even mode perturbation. In high resolution simulations the jet boundary rolls up and large amounts of external gas are entrained into the jet. In low resolution simulations this entrainment process is impeded by numerical viscosity. The three-dimensional jet simulations behave similarly to two-dimensional jet runs with the same grid resolutions.

Au/Ti resistors used for Nb/Pb-alloy Josephson junctions. II. Thermal stability

NASA Astrophysics Data System (ADS)

Murakami, Masanori; Kim, K. K.

1984-10-01

In the preceding paper bilayered Au/Ti resistors were found to have excellent electrical stability during storage at room temperature after preannealing at an elevated temperature, which is essential to design logic and memory circuits of Nb/Pb-alloy Josephson junction devices. The resistors could contact directly with the Pb-alloy control lines in which Pb and In atoms which are known to intermix easily with Au atoms are contained. Since Pb and In atoms in the control lines are separated from Au atoms of the resistors by thin Ti layers, thermal stability at the contacts is a major concern for use of the Au/Ti resistor material in the Josephson devices. In the present study, surface morphology change and diffusion mechanism at the resistor/control-line contacts were studied using x-ray diffraction and scanning electron microscopy for square-shaped Au/Ti resistors covered by Pb-In layers. The samples were isothermally annealed at temperatures ranging from 353 to 423 K. The diffusion did not occur immediately after annealing at these temperatures. After the incubation period, the interdiffusion was observed to initiate at the edges of the resistors facing to the center of the cathode. Significant amounts of the In atoms in the Pb-In layers were observed to diffuse into the Au layers of the resistors, forming AuIn2 compounds under the Ti layers. By measuring growth rates of the AuIn2 layers, the diffusion coefficients and the activation energy for the layer growth were determined. Also, by analyzing changes in the In concentration in the Pb-In layers during annealing, interdiffusion coefficients of In atoms in the Pb-In layers were determined using a computer simulation technique. The activation energy was about 1.1 eV. Since these diffusion coefficients were found to be very close to those determined previously in bulk materials, the diffusion kinetics is believed to be controlled by the lattice diffusion. Based on the present results, several methods to reduce the interdiffusion between Pb-alloy and Au/Ti resistors were proposed.

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

DOE PAGES

Young, E. C.; Grandjean, N.; Mates, T. E.; ...

2016-11-23

Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It has been found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surface coverage is ~10 12 cm -2, which is consistent with previous reports on GaAs and silicon wafers. At the onset of growth, the Ca species segregates at the growth front while incorporating at low levels. The incorporation rate is strongly temperature dependent. It is about 0.03% at 820 °C and increases by two orders of magnitude when the temperaturemore » is reduced to 600 °C, which is the typical growth temperature for InGaN alloy. Consequently, [Ca] is as high as 10 18 cm -3 in InGaN/GaN quantum well structures. Such a huge concentration might be detrimental for the efficiency of light emitting diodes (LEDs) if one considers that Ca is potentially a source of Shockley-Read-Hall (SRH) defects. We thus developed a specific growth strategy to reduce [Ca] in the MBE grown LEDs, which consisted of burying Ca in a low temperature InGaN/GaN superlattice (SL) before the growth of the active region. Finally, two LED samples with and without an SL were fabricated. An increase in the output power by one order of magnitude was achieved when Ca was reduced in the LED active region, providing evidence for the role of Ca in the SRH recombination.« less

Design and development of SiGe based near-infrared photodetectors

NASA Astrophysics Data System (ADS)

Zeller, John W.; Puri, Yash R.; Sood, Ashok K.; McMahon, Shane; Efsthadiatis, Harry; Haldar, Pradeep; Dhar, Nibir K.

2014-10-01

Near-infrared (NIR) sensors operating at room temperatures are critical for a variety of commercial and military applications including detecting mortar fire and muzzle flashes. SiGe technology offers a low-cost alternative to conventional IR sensor technologies such as InGaAs, InSb, and HgCdTe for developing NIR micro-sensors that will not require any cooling and can operate with high bandwidths and comparatively low dark currents. Since Ge has a larger thermal expansion coefficient than Si, tensile strain may be incorporated into detector devices during the growth process, enabling an extended operating wavelength range above 1600 nm. SiGe based pin photodetectors have advantages of high stability, low noise, and high responsivity compared to metal-semiconductor-metal (MSM) devices. We have developed a process flow and are fabricating SiGe detector devices on 12" (300 mm) silicon wafers in order to take advantage of high throughput, large-area leading-edge silicon based CMOS technology that provides small feature sizes with associated device cost/density scaling advantages. The fabrication of the detector devices is facilitated by a two-step growth process incorporating initial low temperature growth of Ge/SiGe to form a thin strain-relaxed layer, followed by high temperature growth to deposit a thicker absorbing film, and subsequent high temperature anneal. This growth process is designed to effectively reduce dark current and enhance detector performance by reducing the number of defects and threading dislocations which form recombination centers during the growth process. Various characterization techniques have been employed to determine the properties of the epitaxially deposited Ge/SiGe layers, and the corresponding results are discussed.

Nonlinear development and secondary instability of Gortler vortices in hypersonic flows

NASA Technical Reports Server (NTRS)

Fu, Yibin B.; Hall, Philip

1991-01-01

In a hypersonic boundary layer over a wall of variable curvature, the region most susceptible to Goertler vortices is the temperature adjustment layer over which the basic state temperature decreases monotonically to its free stream value. Except for a special wall curvature distribution, the evolution of Goertler vortices trapped in the temperature adjustment layer will in general be strongly affected by the boundary layer growth through the O(M sup 3/2) curvature of the basic state, where M is the free stream Mach number. Only when the local wavenumber becomes as large as of order M sup 3/8, do nonparallel effects become negligible in the determination of stability properties. In the latter case, Goertler vortices will be trapped in a thin layer of O(epsilon sup 1/2) thickness which is embedded in the temperature adjustment layer; here epsilon is the inverse of the local wavenumber. A weakly nonlinear theory is presented in which the initial nonlinear development of Goertler vortices in the neighborhood of the neutral position is studied and two coupled evolution equations are derived. From these, it can be determined whether the vortices are decaying or growing depending on the sign of a constant which is related to wall curvature and the basic state temperature.

Magnetic Iron Oxide Nanowires Formed by Reactive Dewetting.

PubMed

Bennett, Roger A; Etman, Haitham A; Hicks, Hannah; Richards, Leah; Wu, Chen; Castell, Martin R; Dhesi, Sarnjeet S; Maccherozzi, Francesco

2018-04-11

The growth and reactive dewetting of ultrathin films of iron oxides supported on Re(0001) surfaces have been imaged in situ in real time. Initial growth forms a nonmagnetic stable FeO (wüstite like) layer in a commensurate network upon which high aspect ratio nanowires of several microns in length but less than 40 nm in width can be fabricated. The nanowires are closely aligned with the substrate crystallography and imaging by X-ray magnetic circular dichroism shows that each contain a single magnetic domain. The driving force for dewetting appears to be the minimization of strain energy of the Fe 3 O 4 crystallites and follows the Tersoff and Tromp model in which strain is minimized at constant height by extending in one epitaxially matched direction. Such wires are promising in spintronic applications and we predict that the growth will also occur on other hexagonal substrates.

Analytical Prediction of Damage Growth in Notched Composite Panels Loaded in Axial Compression

NASA Technical Reports Server (NTRS)

Ambur, Damodar R.; McGowan, David M.; Davila, Carlos G.

1999-01-01

A progressive failure analysis method based on shell elements is developed for the computation of damage initiation and growth in stiffened thick-skin stitched graphite-epoxy panels loaded in axial compression. The analysis method involves a step-by-step simulation of material degradation based on ply-level failure mechanisms. High computational efficiency is derived from the use of superposed layers of shell elements to model each ply orientation in the laminate. Multiple integration points through the thickness are used to obtain the correct bending effects through the thickness without the need for ply-by-ply evaluations of the state of the material. The analysis results are compared with experimental results for three stiffened panels with notches oriented at 0, 15 and 30 degrees to the panel width dimension. A parametric study is performed to investigate the damage growth retardation characteristics of the Kevlar stitch lines in the pan

Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures

NASA Astrophysics Data System (ADS)

Hu, Shu; McIntyre, Paul C.

2012-02-01

The kinetics of Al-catalyzed layer exchange crystallization of amorphous germanium (Ge) thin films at low temperatures is reported. Observation of Ge mass transport from an underlying amorphous Ge layer to the Al film surface through an interposed sub-nanometer GeOx interfacial layer allows independent measurement of the areal density and average area of crystalline Ge islands formed on the film surface. We show that bias-voltage stressing of the interfacial layer can be used to control the areal density of nucleated Ge islands. Based on experimental observations, the Johnson-Mehl-Avrami-Kolmogorov phase transformation theory is used to model nanoscale nucleation and growth of Ge islands in two dimensions. Ge island nucleation kinetics follows an exponentially decaying nucleation rate with time. Ge island growth kinetics switches from linear growth at a constant growth velocity to diffusion-limited growth as the growth front advances. The transition point between these two regimes depends on the Ge nucleation site density and the annealing temperature. Knowledge of the kinetics of low-temperature crystallization is important in achieving textured polycrystalline Ge thin films with large grains for applications in large-area electronics and solar energy conversion.

Does Tumor Development Follow a Programmed Path?

NASA Astrophysics Data System (ADS)

Austin, Robert

2011-03-01

The initiation and progression of a tumor is a complex process, resembling the growth of a embryo in terms of the stages of development and increasing differentiation and somatic evolution of constituent cells in the community of cells that constitute the tumor. Typically we view cancer cells as rogue individuals violating the rules of the games played within an organism, but I would suggest that what we see is a programmed and algorithmic process. I will then question If tumor progression is dominated by the random acquisition of successive survival traits, or by a systematic and sequential unpacking of ``weapons'' from a pre-adapted ``toolkit'' of genetic and epigenetic potentialities? Can we then address this hypothesis by data mining solid tumors layer by layer? Support of the NSF and the NCI is gratefully acknowledged.

An experimental investigation of the effect of hydrophobicity on the rate of frost growth in laminar channel flows

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dyer, J.M.; Storey, B.D.; Hoke, J.L.

2000-07-01

An experimental investigation of the effect of the substrate on frost growth rate is presented. Measurements of frost height as a function of time are presented for a flat, bare, horizontally oriented aluminum substrate and four coated substrates, two hydrophilic and two hydrophobic. The average frost growth rate on the hydrophilic coated aluminum substrate is 13% higher than the control substrate, while the frost growth rate on the hydrophilic kapton substrate is 4% higher. Frost grows on the hydrophobic substrates at a rate 19% and 3% lower than the reference substrate for the polytetrafluoroethylene (PTFE) coated steel and PTFE tape,more » respectively. Differences in the receding and advancing contact angles for these substrates do not fully explain the difference in growth rates. Differences in initial water deposition, freezing, and frost growth on hydrophilic and hydrophobic substrates are examined using confocal microscopy. On the basis of the microscopic observations, the authors hypothesize that the water coverage on the substrate before and after freezing can affect the thermal resistance of the mature frost layer. Differences in thermal resistance, in turn, affect the growth rate.« less

Systematic identification of genes involved in divergent skeletal muscle growth rates of broiler and layer chickens.

PubMed

Zheng, Qi; Zhang, Yong; Chen, Ying; Yang, Ning; Wang, Xiu-Jie; Zhu, Dahai

2009-02-22

The genetic closeness and divergent muscle growth rates of broilers and layers make them great models for myogenesis study. In order to discover the molecular mechanisms determining the divergent muscle growth rates and muscle mass control in different chicken lines, we systematically identified differentially expressed genes between broiler and layer skeletal muscle cells during different developmental stages by microarray hybridization experiment. Taken together, 543 differentially expressed genes were identified between broilers and layers across different developmental stages. We found that differential regulation of slow-type muscle gene expression, satellite cell proliferation and differentiation, protein degradation rate and genes in some metabolic pathways could give great contributions to the divergent muscle growth rates of the two chicken lines. Interestingly, the expression profiles of a few differentially expressed genes were positively or negatively correlated with the growth rates of broilers and layers, indicating that those genes may function in regulating muscle growth during development. The multiple muscle cell growth regulatory processes identified by our study implied that complicated molecular networks involved in the regulation of chicken muscle growth. These findings will not only offer genetic information for identifying candidate genes for chicken breeding, but also provide new clues for deciphering mechanisms underlining muscle development in vertebrates.

Role of graphene inter layer on the formation of the MoS2-CZTS interface during growth

NASA Astrophysics Data System (ADS)

Vishwakarma, Manoj; Thota, Narayana; Karakulina, Olesia; Hadermann, Joke; Mehta, B. R.

2018-05-01

The growth of MoS2 layer near the Mo/CZTS interface during sulphurization process can have an impact on back contact cell parameters (series resistance and fill factor) depending upon the thickness or quality of MoS2. This study reports the dependence of the thickness of interfacial MoS2 layer on the growth of graphene at the interface between molybdenum back contact and deposited CZTS layer. The graphene layer reduces the accumulation of Zn/ZnS, Sn/SnO2 and formation of pores near the MoS2-CZTS interface. The use of graphene as interface layer can be potentially useful for improving the quality of Mo/MoS2/CZTS interface.

DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects

NASA Astrophysics Data System (ADS)

Butcher, K. S. A.; Terziyska, P. T.; Gergova, R.; Georgiev, V.; Georgieva, D.; Binsted, P. W.; Skerget, S.

2017-01-01

It is shown that attractive electrostatic interactions between regions of positive charge in RF plasmas and the negative charge of metal wetting layers, present during compound semiconductor film growth, can have a greater influence than substrate temperature on film morphology. Using GaN and InN film growth as examples, the DC field component of a remote RF plasma is demonstrated to electrostatically affect metal wetting layers to the point of actually determining the mode of film growth. Examples of enhanced self-seeded nanopillar growth are provided in the case where the substrate is directly exposed to the DC field generated by the plasma. In another case, we show that electrostatic shielding of the DC field from the substrate can result in the growth of Ga-face GaN layers from gallium metal wetting layers at 490 °C with root-mean-square roughness values as low as 0.6 nm. This study has been carried out using a migration enhanced deposition technique with pulsed delivery of the metal precursor allowing the identification of metal wetting layers versus metal droplets as a function of the quantity of metal source delivered per cycle. It is also shown that electrostatic interactions with the plasma can affect metal rich growth limits, causing metal droplet formation for lower metal flux than would otherwise occur. Accordingly, film growth rates can be increased when shielding the substrate from the positive charge region of the plasma. For the example shown here, growth rates were more than doubled using a shielding grid.

Optimal perturbations of a finite-width mixing layer near the trailing edge

NASA Astrophysics Data System (ADS)

Gumbart, James C.; Rabchuk, James

2002-03-01

The trailing edge of a surface separating two fluid flows can act as an efficient receptor for acoustic or other disturbances. The incident wave energy is converted by a linear mechanism into incipient flow instabilities which lead further downstream to the transition to turbulence. Understanding this process is essential for analyzing feedback loops and other resonances which can cause unwanted structural vibrations in the surface material or directed acoustic emissions from the mixing region. Previously, the modes of instability in a finite-width mixing layer near the trailing edge were studied as a function of frequency by assuming that vorticity was continually being introduced into the flow at the trailing edge by the forcing field. It was found that the initial amplitude of the growing instability mode was a sharply decreasing function of forcing frequency, and that the initial amplitude was a minimum for the frequency at which the rate of instability growth was a maximum^1. This result has led to a study of the adjoint equation for the perturbation stream function, whose eigensolutions are known to be associated with the optimal perturbation field for the frequency of forcing leading to the greatest instability growth downstream. We have obtained these solutions for a piecewise linear velocity profile near the trailing edge using group-theoretic techniques and have shown that they are indeed optimal. We have also analyzed the nature of the physical forcing field that might produce these optimal perturbations. ^1 Rabchuk, J.A., July 2000, Physics of Fluids.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shengurov, V. G.; Chalkov, V. Yu.; Denisov, S. A.

The conditions of the epitaxial growth of high-quality relaxed Si{sub 1–x}Ge{sub x} layers by the combined method of the sublimation molecular-beam epitaxy and vapor-phase decomposition of monogermane on a hot wire are considered. The combined growth procedure proposed provides a means for growing Si{sub 1–x}Ge{sub x} layers with a thickness of up to 2 µm and larger. At reduced growth temperatures (T{sub S} = 325–350°C), the procedure allows the growth of Si{sub 1–x}Ge{sub x} layers with a small surface roughness (rms ≈ 2 nm) and a low density of threading dislocations. The photoluminescence intensity of Si{sub 1–x}Ge{sub x}:Er layers ismore » significantly (more than five times) higher than the photoluminescence intensity of layers produced under standard growth conditions (T{sub S} ≈ 500°C) and possess an external quantum efficiency estimated at a level of ~0.4%.« less

Parametric Investigation of the Isothermal Kinetics of Growth of Graphene on a Nickel Catalyst in the Process of Chemical Vapor Deposition of Hydrocarbons

NASA Astrophysics Data System (ADS)

Futko, S. I.; Shulitskii, B. G.; Labunov, V. A.; Ermolaeva, E. M.

2016-11-01

A kinetic model of isothermal synthesis of multilayer graphene on the surface of a nickel foil in the process of chemical vapor deposition, on it, of hydrocarbons supplied in the pulsed regime is considered. The dependences of the number of graphene layers formed and the time of their growth on the temperature of the process, the concentration of acetylene, and the thickness of the nickel foil were calculated. The regime parameters of the process of chemical vapor deposition, at which single-layer graphene and bi-layer graphene are formed, were determined. The dynamics of growth of graphene domains at chemical-vapor-deposition parameters changing in wide ranges was investigated. It is shown that the time dependences of the rates of growth of single-layer graphene and bi-layer graphene are nonlinear in character and that they are determined by the kinetics of nucleation and growth of graphene and the diffusion flow of carbon atoms in the nickel foil.

Initial growth processes in the epitaxy of Ge with GeH{sub 4} on oxidized Si substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Angermeier, D.; Kuhn, W.S.; Druihle, R.

1997-02-01

The heteroepitaxial growth of Ge on (100) Si in a horizontal, atmospheric pressure metallorganic vapor-phase epitaxy reactor is reported using germane GeH{sub 4} (0.1% in H{sub 2}). A particularly crucial parameter for germanium deposition on silicon is the time for the onset of epitaxial growth, the incubation time. The time was measured at substrate temperatures between 450 and 600{degree}C. At a substrate temperature of 450{degree}C an incubation time of 520 s was found and for the subsequent epitaxy growth rates of 50 nm/min were determined by Nomarski microscopy and electron diffraction. The existence of residual oxide in the reactor chambermore » forming an in situ SiO{sub 2} layer was evaluated by x-ray photoemission spectroscopy. To obtain a more thorough understanding of the gas- and solid-phase composition of Ge, Si, and oxygen the Gibbs energy of the system was calculated for various growth temperatures. It was concluded that SiO{sub 2} molecules are reduced by GeH{sub 4} molecules during the incubation period.« less

Planetesimal Initial Mass Functions and Creation Rates Under Turbulent Concentration Using Scale-Dependent Cascades

NASA Technical Reports Server (NTRS)

Cuzzi, J. N.; Hartlep, T.; Estrada, P.

2016-01-01

The initial accretion of primitive bodies from freely-floating nebula particles remains problematic. Traditional growth-by-sticking models in turbulent nebulae encounter a "meter-size barrier" due to both drift and destruction, or even a millimeter-to-centimeter-size "bouncing" barrier. Recent suggestions have been made that some "lucky" particles might be able to outgrow the collision and/or drift barriers, and lead to so-called "streaming instabilities" or SI. However, new full models of growth by sticking in the presence of radial drift show that lucky particles (the largest particles, at the tail of the size distribution, that grow beyond the nominal fragmentation and drift barriers) are far too rare to lead to any collective effects such as streaming or gravitational instabilities. Thus we need to focus on typical radii gamma(sub M) which contain most of the mass. Our models of disks with weak-to-moderate turbulence, which include all the most recent experimental constraints on collisional growth, erosion, bouncing, and fragmentation, as well as radial drift, find that growth stalls quite generally at sizes gamma(sub M) which are too small to settle into layers which are dense enough for any collective effects (streaming or gravitational instabilities) to arise. Even if growth by sticking could somehow breach the nominal barriers (perhaps if the actual sticking or strength is larger than current estimates for pure ice or pure silicate, with specific grain sizes), turbulent nebulae present subsequent formidable obstacles to incremental growth through the 1-10km size range. On the other hand, non-turbulent nebulae alpha is less than 10(Sup -4).

Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Washizu, Tomoya; Ike, Shinichi; Inuzuka, Yuki; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

2017-06-01

Selective epitaxial growth of Ge and Ge1-xSnx layers on Si substrates was performed by using metal-organic chemical vapor deposition (MOCVD) with precursors of tertiary-butyl-germane (t-BGe) and tri-butyl-vinyl-tin (TBVSn). We investigated the effects of growth temperature and total pressure during growth on the selectivity and the crystallinity of the Ge and Ge1-xSnx epitaxial layers. Under low total pressure growth conditions, the dominant mechanism of the selective growth of Ge epitaxial layers is the desorption of the Ge precursors. At a high total pressure case, it is needed to control the surface migration of precursors to realize the selectivity because the desorption of Ge precursors was suppressed. The selectivity of Ge growth was improved by diffusion of the Ge precursors on the SiO2 surfaces when patterned substrates were used at a high total pressure. The selective epitaxial growth of Ge1-xSnx layer was also realized using MOCVD. We found that the Sn precursors less likely to desorb from the SiO2 surfaces than the Ge precursors.

Patterns of Expression in the Matrix Proteins Responsible for Nucleation and Growth of Aragonite Crystals in Flat Pearls of Pinctada fucata

PubMed Central

Xiang, Liang; Su, Jingtan; Zheng, Guilan; Liang, Jian; Zhang, Guiyou; Wang, Hongzhong; Xie, Liping; Zhang, Rongqing

2013-01-01

The initial growth of the nacreous layer is crucial for comprehending the formation of nacreous aragonite. A flat pearl method in the presence of the inner-shell film was conducted to evaluate the role of matrix proteins in the initial stages of nacre biomineralization in vivo. We examined the crystals deposited on a substrate and the expression patterns of the matrix proteins in the mantle facing the substrate. In this study, the aragonite crystals nucleated on the surface at 5 days in the inner-shell film system. In the film-free system, the calcite crystals nucleated at 5 days, a new organic film covered the calcite, and the aragonite nucleated at 10 days. This meant that the nacre lamellae appeared in the inner-shell film system 5 days earlier than that in the film-free system, timing that was consistent with the maximum level of matrix proteins during the first 20 days. In addition, matrix proteins (Nacrein, MSI60, N19, N16 and Pif80) had similar expression patterns in controlling the sequential morphologies of the nacre growth in the inner-film system, while these proteins in the film-free system also had similar patterns of expression. These results suggest that matrix proteins regulate aragonite nucleation and growth with the inner-shell film in vivo. PMID:23776687

Growth characteristics of primary M7C3 carbide in hypereutectic Fe-Cr-C alloy.

PubMed

Liu, Sha; Zhou, Yefei; Xing, Xiaolei; Wang, Jibo; Ren, Xuejun; Yang, Qingxiang

2016-09-06

The microstructure of the hypereutectic Fe-Cr-C alloy is observed by optical microscopy (OM). The initial growth morphology, the crystallographic structure, the semi-molten morphology and the stacking faults of the primary M7C3 carbide are observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The in-suit growth process of the primary M7C3 carbide was observed by confocal laser microscope (CLM). It is found that the primary M7C3 carbide in hypereutectic Fe-Cr-C alloy is irregular polygonal shape with several hollows in the center and gaps on the edge. Some primary M7C3 carbides are formed by layers of shell or/and consist of multiple parts. In the initial growth period, the primary M7C3 carbide forms protrusion parallel to {} crystal planes. The extending and revolving protrusion forms the carbide shell. The electron backscattered diffraction (EBSD) maps show that the primary M7C3 carbide consists of multiple parts. The semi-molten M7C3 carbide contains unmelted shell and several small-scale carbides inside, which further proves that the primary M7C3 carbide is not an overall block. It is believed that the coalescence of the primary M7C3 carbides is ascribed to the growing condition of the protrusion and the gap filling process.

Growth characteristics of primary M7C3 carbide in hypereutectic Fe-Cr-C alloy

PubMed Central

Liu, Sha; Zhou, Yefei; Xing, Xiaolei; Wang, Jibo; Ren, Xuejun; Yang, Qingxiang

2016-01-01

The microstructure of the hypereutectic Fe-Cr-C alloy is observed by optical microscopy (OM). The initial growth morphology, the crystallographic structure, the semi-molten morphology and the stacking faults of the primary M7C3 carbide are observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The in-suit growth process of the primary M7C3 carbide was observed by confocal laser microscope (CLM). It is found that the primary M7C3 carbide in hypereutectic Fe-Cr-C alloy is irregular polygonal shape with several hollows in the center and gaps on the edge. Some primary M7C3 carbides are formed by layers of shell or/and consist of multiple parts. In the initial growth period, the primary M7C3 carbide forms protrusion parallel to {} crystal planes. The extending and revolving protrusion forms the carbide shell. The electron backscattered diffraction (EBSD) maps show that the primary M7C3 carbide consists of multiple parts. The semi-molten M7C3 carbide contains unmelted shell and several small-scale carbides inside, which further proves that the primary M7C3 carbide is not an overall block. It is believed that the coalescence of the primary M7C3 carbides is ascribed to the growing condition of the protrusion and the gap filling process. PMID:27596718

Wavelength selection of rolling-grain ripples in the laboratory

NASA Astrophysics Data System (ADS)

Rousseaux, Germain; Stegner, Alexandre; Wesfreid, José Eduardo

2004-03-01

We have performed an experimental study, at very high resolution, of the wavelength selection and the evolution of rolling-grain ripples. A clear distinction is made between the flat sand bed instability and the ripple coarsening. The observation of the initial wavelength for the rolling-grain ripples is only possible close to the threshold for movement which imposes a constraint on the parameters. Moreover, we have proposed a law for the selection of the unstable wavelength under the latter constraint. Our results suggest that the initial wavelength depends on the amplitude of oscillation, the grain diameter, and the Stokes layer. Besides, during the coarsening, we observe no self-similarity of the ripple shape and for few cases a logarithmic growth of the wavelength.

Atomically Thin Al2O3 Films for Tunnel Junctions

NASA Astrophysics Data System (ADS)

Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

2017-06-01

Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

Isothermal Oxidation of Magnetite to Hematite in Air and Cyclic Reduction/Oxidation Under Carbon Looping Combustion Conditions

NASA Astrophysics Data System (ADS)

Simmonds, Tegan; Hayes, Peter C.

2017-12-01

In the carbon looping combustion process the oxygen carrier is regenerated through oxidation in air; this process has been simulated by the oxidation of dense synthetic magnetite for selected temperatures and times. The oxidation of magnetite in air is shown to occur through the formation of dense hematite layers on the particle surface. This dense hematite forms through lath type shear transformations or solid-state diffusion through the product layer. Cyclic reduction in CO-CO2/oxidation in air of hematite single crystals has been carried out under controlled laboratory conditions at 1173 K (900 °C). It has been shown that the initial reduction step is critical to determining the product microstructure, which consists of gas pore dendrites in the magnetite matrix with blocky hematite formed on the pore surfaces. The progressive growth of the magnetite layer with the application of subsequent cycles appears to continue until no original hematite remains, after which physical disintegration of the particles takes place.

Niobium oxide nanocolumns formed via anodic alumina with modulated pore diameters

NASA Astrophysics Data System (ADS)

Pligovka, A.; Zakhlebayeva, A.; Lazavenka, A.

2018-03-01

Niobium oxide nanocolumns with modulated diameters were formed for the first time. An Al/Nb bilayer specimen was prepared by successive sputter-deposition of 300 nm niobium layer and 1200 nm aluminum layer onto silicon wafer. Regular anodic alumina matrix with modulated pore diameters was formed by sequential anodization of initial specimen in tartaric acid at 180 V, and in oxalic acid at 37 V. Further potentiodynamic reanodization of the specimen up to 400 V causes the simultaneous growth of 440 nm continuous niobium oxide layer beneath the alumina film and two types of an array of oxide nanocolumns (thick – with 100 nm width and 630 nm high and thin – with 25 nm width and 170 nm high), which are the filling of the alumina pores. The morphology of the formed anodic niobium oxide nanocolumns with modulated diameters was determined by field emission scanning electron microscopy. The formed nanostructures can be used for perspective devices of nano- and optoelectronics such as photonic crystals.

Recent Advances in the Inverted Planar Structure of Perovskite Solar Cells.

PubMed

Meng, Lei; You, Jingbi; Guo, Tzung-Fang; Yang, Yang

2016-01-19

Inorganic-organic hybrid perovskite solar cells research could be traced back to 2009, and initially showed 3.8% efficiency. After 6 years of efforts, the efficiency has been pushed to 20.1%. The pace of development was much faster than that of any type of solar cell technology. In addition to high efficiency, the device fabrication is a low-cost solution process. Due to these advantages, a large number of scientists have been immersed into this promising area. In the past 6 years, much of the research on perovskite solar cells has been focused on planar and mesoporous device structures employing an n-type TiO2 layer as the bottom electron transport layer. These architectures have achieved champion device efficiencies. However, they still possess unwanted features. Mesoporous structures require a high temperature (>450 °C) sintering process for the TiO2 scaffold, which will increase the cost and also not be compatible with flexible substrates. While the planar structures based on TiO2 (regular structure) usually suffer from a large degree of J-V hysteresis. Recently, another emerging structure, referred to as an "inverted" planar device structure (i.e., p-i-n), uses p-type and n-type materials as bottom and top charge transport layers, respectively. This structure derived from organic solar cells, and the charge transport layers used in organic photovoltaics were successfully transferred into perovskite solar cells. The p-i-n structure of perovskite solar cells has shown efficiencies as high as 18%, lower temperature processing, flexibility, and, furthermore, negligible J-V hysteresis effects. In this Account, we will provide a comprehensive comparison of the mesoporous and planar structures, and also the regular and inverted of planar structures. Later, we will focus the discussion on the development of the inverted planar structure of perovskite solar cells, including film growth, band alignment, stability, and hysteresis. In the film growth part, several methods for obtaining high quality perovskite films are reviewed. In the interface engineering parts, the effect of hole transport layer on subsequent perovskite film growth and their interface band alignment, and also the effect of electron transport layers on charge transport and interface contact will be discussed. As concerns stability, the role of charge transport layers especially the top electron transport layer in the devices stability will be concluded. In the hysteresis part, possible reasons for hysteresis free in inverted planar structure are provided. At the end of this Account, future development and possible solutions to the remaining challenges facing the commercialization of perovskite solar cells are discussed.

New CVD-based method for the growth of high-quality crystalline zinc oxide layers

NASA Astrophysics Data System (ADS)

Huber, Florian; Madel, Manfred; Reiser, Anton; Bauer, Sebastian; Thonke, Klaus

2016-07-01

High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition (CVD)-based low-cost growth method. The process is characterized by total simplicity, high growth rates, and cheap, less hazardous precursors. To produce elementary zinc vapour, methane (CH4) is used to reduce a ZnO powder. By re-oxidizing the zinc with pure oxygen, highly crystalline ZnO layers were grown on gallium nitride (GaN) layers and on sapphire substrates with an aluminum nitride (AlN) nucleation layer. Using simple CH4 as precursor has the big advantage of good controllability and the avoidance of highly toxic gases like nitrogen oxides. In photoluminescence (PL) measurements the samples show a strong near-band-edge emission and a sharp line width at 5 K. The good crystal quality has been confirmed in high resolution X-ray diffraction (HRXRD) measurements. This new growth method has great potential for industrial large-scale production of high-quality single crystal ZnO layers.

Influence of osmotic stress on the profile and gene expression of surface layer proteins in Lactobacillus acidophilus ATCC 4356.

PubMed

Palomino, María Mercedes; Waehner, Pablo M; Fina Martin, Joaquina; Ojeda, Paula; Malone, Lucía; Sánchez Rivas, Carmen; Prado Acosta, Mariano; Allievi, Mariana C; Ruzal, Sandra M

2016-10-01

In this work, we studied the role of surface layer (S-layer) proteins in the adaptation of Lactobacillus acidophilus ATCC 4356 to the osmotic stress generated by high salt. The amounts of the predominant and the auxiliary S-layer proteins SlpA and SlpX were strongly influenced by the growth phase and high-salt conditions (0.6 M NaCl). Changes in gene expression were also observed as the mRNAs of the slpA and slpX genes increased related to the growth phase and presence of high salt. A growth stage-dependent modification on the S-layer protein profile in response to NaCl was observed: while in control conditions, the auxiliary SlpX protein represented less than 10 % of the total S-layer protein, in high-salt conditions, it increased to almost 40 % in the stationary phase. The increase in S-layer protein synthesis in the stress condition could be a consequence of or a way to counteract the fragility of the cell wall, since a decrease in the cell wall thickness and envelope components (peptidoglycan layer and lipoteichoic acid content) was observed in L. acidophilus when compared to a non-S-layer-producing species such as Lactobacillus casei. Also, the stationary phase and growth in high-salt medium resulted in increased release of S-layer proteins to the supernatant medium. Overall, these findings suggest that pre-growth in high-salt conditions would result in an advantage for the probiotic nature of L. acidophilus ATCC 4356 as the increased amount and release of the S-layer might be appropriate for its antimicrobial capacity.

Development of Columnar Topography in the Excitatory Layer 4 to Layer 2/3 Projection in Rat Barrel Cortex

PubMed Central

Bender, Kevin J.; Rangel, Juliana; Feldman, Daniel E.

2011-01-01

The excitatory feedforward projection from layer (L) 4 to L2/3 in rat primary somatosensory (S1) cortex exhibits precise, columnar topography that is critical for columnar processing of whisker inputs. Here, we characterize the development of axonal topography in this projection using single-cell reconstructions in S1 slices. In the mature projection [postnatal day (P) 14 –26], axons of L4 cells extending into L2/3 were confined almost entirely to the home barrel column, consistent with previous results. At younger ages (P8 –11), however, axonal topography was significantly less columnar, with a large proportion of branches innervating neighboring barrel columns representing adjacent whisker rows. Mature topography developed from this initial state by targeted axonal growth within the home column and by growth of barrel columns themselves. Raising rats with all or a subset of whiskers plucked from P8 –9, manipulations that induce reorganization of functional whisker maps and synaptic depression at L4 to L2/3 synapses, did not alter normal anatomical development of L4 to L2/3 axons. Thus, development of this projection does not require normal sensory experience after P8, and deprivation-induced reorganization of whisker maps at this age is unlikely to involve physical remodeling of L4 to L2/3 axons. PMID:14507976

Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tay, Roland Yingjie; Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798; Tsang, Siu Hon

Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random andmore » uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.« less

Backscatter from ice growing on shallow tundra lakes near Barrow, Alaska, winter 1991-1992

NASA Technical Reports Server (NTRS)

Jeffries, M. O.; Wakabayashi, H.; Weeks, W. F.; Morris, K.

1993-01-01

The timing of freeze-up and break-up of Arctic lake ice is a potentially useful environmental indicator that could be monitored using SAR. In order to do this, it is important to understand how the properties and structure of the ice during its growth and decay affect radar backscatter and thus lake ice SAR signatures. The availability of radiometrically and geometrically calibrated digital SAR data time series from the Alaska SAR Facility has made it possible for the first time to quantify lake ice backscatter intensity (sigma(sup o)) variations. This has been done for ice growing on shallow tundra lakes near Barrow, NW Alaska, from initial growth in September 1991 until thawing and decay in June 1992. Field and laboratory observations and measurements of the lake ice were made in late April 1992. The field investigations of the coastal lakes near Barrow confirmed previous findings that, (1) ice frozen to the lake bottom had a dark signature in SAR images, indicating weak backscatter, while, (2) ice that was floating had a bright signature, indicating strong backscatter. At all sites, regardless of whether the ice was grounded or floating, there was a layer of clear, inclusion-free ice overlaying a layer of ice with dense concentrations of vertically oriented tubular bubbles. At some sites, there was a third layer of porous, snow-ice overlaying the clear ice.

Dynamics of electrical double layer formation in room-temperature ionic liquids under constant-current charging conditions

NASA Astrophysics Data System (ADS)

Jiang, Xikai; Huang, Jingsong; Zhao, Hui; Sumpter, Bobby G.; Qiao, Rui

2014-07-01

We report detailed simulation results on the formation dynamics of an electrical double layer (EDL) inside an electrochemical cell featuring room-temperature ionic liquids (RTILs) enclosed between two planar electrodes. Under relatively small charging currents, the evolution of cell potential from molecular dynamics (MD) simulations during charging can be suitably predicted by the Landau-Ginzburg-type continuum model proposed recently (Bazant et al 2011 Phys. Rev. Lett. 106 046102). Under very large charging currents, the cell potential from MD simulations shows pronounced oscillation during the initial stage of charging, a feature not captured by the continuum model. Such oscillation originates from the sequential growth of the ionic space charge layers near the electrode surface. This allows the evolution of EDLs in RTILs with time, an atomistic process difficult to visualize experimentally, to be studied by analyzing the cell potential under constant-current charging conditions. While the continuum model cannot predict the potential oscillation under such far-from-equilibrium charging conditions, it can nevertheless qualitatively capture the growth of cell potential during the later stage of charging. Improving the continuum model by introducing frequency-dependent dielectric constant and density-dependent ion diffusion coefficients may help to further extend the applicability of the model. The evolution of ion density profiles is also compared between the MD and the continuum model, showing good agreement.

Dynamics of electrical double layer formation in room-temperature ionic liquids under constant-current charging conditions.

PubMed

Jiang, Xikai; Huang, Jingsong; Zhao, Hui; Sumpter, Bobby G; Qiao, Rui

2014-07-16

We report detailed simulation results on the formation dynamics of an electrical double layer (EDL) inside an electrochemical cell featuring room-temperature ionic liquids (RTILs) enclosed between two planar electrodes. Under relatively small charging currents, the evolution of cell potential from molecular dynamics (MD) simulations during charging can be suitably predicted by the Landau-Ginzburg-type continuum model proposed recently (Bazant et al 2011 Phys. Rev. Lett. 106 046102). Under very large charging currents, the cell potential from MD simulations shows pronounced oscillation during the initial stage of charging, a feature not captured by the continuum model. Such oscillation originates from the sequential growth of the ionic space charge layers near the electrode surface. This allows the evolution of EDLs in RTILs with time, an atomistic process difficult to visualize experimentally, to be studied by analyzing the cell potential under constant-current charging conditions. While the continuum model cannot predict the potential oscillation under such far-from-equilibrium charging conditions, it can nevertheless qualitatively capture the growth of cell potential during the later stage of charging. Improving the continuum model by introducing frequency-dependent dielectric constant and density-dependent ion diffusion coefficients may help to further extend the applicability of the model. The evolution of ion density profiles is also compared between the MD and the continuum model, showing good agreement.

Three-dimensional instability analysis of boundary layers perturbed by streamwise vortices

NASA Astrophysics Data System (ADS)

Martín, Juan A.; Paredes, Pedro

2017-12-01

A parametric study is presented for the incompressible, zero-pressure-gradient flat-plate boundary layer perturbed by streamwise vortices. The vortices are placed near the leading edge and model the vortices induced by miniature vortex generators (MVGs), which consist in a spanwise-periodic array of small winglet pairs. The introduction of MVGs has been experimentally proved to be a successful passive flow control strategy for delaying laminar-turbulent transition caused by Tollmien-Schlichting (TS) waves. The counter-rotating vortex pairs induce non-modal, transient growth that leads to a streaky boundary layer flow. The initial intensity of the vortices and their wall-normal distances to the plate wall are varied with the aim of finding the most effective location for streak generation and the effect on the instability characteristics of the perturbed flow. The study includes the solution of the three-dimensional, stationary, streaky boundary layer flows by using the boundary region equations, and the three-dimensional instability analysis of the resulting basic flows by using the plane-marching parabolized stability equations. Depending on the initial circulation and positioning of the vortices, planar TS waves are stabilized by the presence of the streaks, resulting in a reduction in the region of instability and shrink of the neutral stability curve. For a fixed maximum streak amplitude below the threshold for secondary instability (SI), the most effective wall-normal distance for the formation of the streaks is found to also offer the most stabilization of TS waves. By setting a maximum streak amplitude above the threshold for SI, sinuous shear layer modes become unstable, as well as another instability mode that is amplified in a narrow region near the vortex inlet position.

Gordon Research Conference on Crystal Growth (1990)

DTIC Science & Technology

1990-04-01

Labs, MH) 14. Cox Vapor Levitation Epitaxy of Quantum Wires and Wire-like Structures Using Laterally Propagating Surface Steps. (Bellcore, Red Bank) 15...introduced many new aspects of crystal growth, including strained layer superlattices, quantum cluster growth, and vertical zone melting of GaAs...Films 2. E. Bauser Semiconductor Liquid Phase Epitaxy: Growth and Properties of Layers and Heterostructures 3. M. L. Steigerwald Growth of Quantum

Surface roughening transition and critical layer thickness in strained-layer heteroepitaxy of EuTe on PbTe (111)

NASA Astrophysics Data System (ADS)

Springholz, G.; Frank, N.; Bauer, G.

1994-05-01

Heteroepitaxial growth of 2% lattice-mismatched EuTe on PbTe (111) by molecular beam epitaxy is investigated in the two-dimensional layer-by-layer growth regime combining in situ reflection high-energy electron diffraction and scanning tunneling microscopy (STM). At the critical layer thickness a distinct surface roughening is observed. The quantitative analysis of STM images yields an increase of the root mean square roughness by a factor of 4 at this roughening transition. Strong evidence is presented that for the used growth conditions this roughening is not caused by strain induced coherent islanding but by misfit dislocations at the onset of strain relaxation.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fireman, Micha N.; Browne, David A.; Speck, James S.

The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditionsmore » that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.« less

Growing Gallium Arsenide On Silicon

NASA Technical Reports Server (NTRS)

Radhakrishnan, Gouri

1989-01-01

Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

Synthesis, Characterization, and Properties of the Two-Dimensional Chalcogenides: Monolayers, Alloys, and Heterostructures

NASA Astrophysics Data System (ADS)

Cain, Jeffrey D.

Inspired by the triumphs of graphene, and motivated by its limitations, the science and engineering community is rapidly exploring the landscape of other layered materials in their atomically-thin forms. Dominating this landscape are the layered chalcogenides; diverse in chemistry, crystal structure, and properties, there are well over 100 primary members of this material family. Driven by quantum confinement, single layers (or few, in some cases) of these materials exhibit electronic, optical, and mechanical properties that diverge dramatically from their bulk counterparts. While initially isolated in monolayer form via mechanical exfoliation, the field of two-dimensional (2D) materials is being forced evolve to more scalable and reliable methods. Focusing on the chalcogenides (e.g. MoS2, Bi 2Se3, etc.), this dissertation introduces and mechanistically examines multiple novel synthetic approaches for the direct growth of monolayers, heterostructures, and alloys with the desired quality, reproducibility and generality. The first methods described in this thesis are physical vapor transport (PVT) and evaporative thinning (ET): a facile, top-down synthesis approach for creating ultrathin specimens of layered materials down to the two-dimensional limit. Evaporative thinning, applied in this study to the fabrication of A2X3 (Bi2Se3 and Sb2Te3) monolayers, is based on the controlled evaporation of material from initially thick specimens until the 2D limit is reached. The resultant flakes are characterized with a suite of imaging and spectroscopic techniques and the mechanism of ET is investigated via in-situ heating within a transmission electron microscope. Additionally, the basic transport properties of the resultant flakes are probed. The growth of ultrathin GeSe flakes is explored using PVT and the material's basic structure, properties, and stability are addressed. Second, oxide precursor based chemical vapor deposition (CVD) is presented for the direct growth of monolayer transition metal dichalcogenides materials (TMDs), MX2. Specifically, synthetic protocols for monolayers of the semiconducting TMDs, MoS2, WS2, and MoSe2, are presented and the layers are completely characterized with a full suite of techniques including scanning/transmission electron microscopy, scanning probe microscopy, and photo-spectroscopy (photoluminescence, Raman scattering) among others. Furthermore, the nucleation and growth processes in CVD grown TMD monolayers is investigated using aberration-corrected scanning transmission electron microscopy and a step-by-step nucleation and growth mechanism for monolayer TMDs is elucidated. Third, the use of monolayers as building blocks for more complex structures is explored and a predictive approach for the synthesis of van der Waals heterostructures and monolayer alloys is designed. This is accomplished using an intellectual framework analogous to the Time-Temperature-Transformation (TTT) diagrams that are ubiquitous in traditional materials science and metallurgy. These are called Time-Temperature-Architecture (TTA) diagrams, wherein the term "architecture" defines the specific conformation of the 2D components. These diagrams provide process guidance to synthesize a library of heterostructures with a range of morphologies and monolayer alloys within both the transition metal sulfide and selenide systems. Lastly, some next steps for future research are outlined. An appendix of summaries of collaborative studies of the optical and electronic properties of CVD grown monolayers TMDs is appended.

Suppression of Mg propagation into subsequent layers grown by MOCVD

NASA Astrophysics Data System (ADS)

Agarwal, Anchal; Tahhan, Maher; Mates, Tom; Keller, Stacia; Mishra, Umesh

2017-01-01

Low temperature (LT) flow modulation epitaxy (FME) or "pulsed" growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers. Mg concentration in the subsequent layers was lowered from ˜1 × 1018 cm-3 for a medium temperature growth at 950 °C to ˜1 × 1016 cm-3 for a low temperature growth at 700 °C via FME. The slope of the Mg concentration drop in the 700 °C FME sample was 20 nm/dec—the lowest ever demonstrated by MOCVD. For growth on Mg implanted GaN layers, the drop for a medium temperature regrowth at 950 °C was ˜10 nm/dec compared to >120 nm/dec for a high temperature regrowth at 1150 °C. This drop-rate obtained at 950 °C or lower was maintained even when the growth temperature in the following layers was raised to 1150 °C. A controlled silicon doping series using LT FME was also demonstrated with the lowest and highest achieved doping levels being 5 × 1016 cm-3 and 6 × 1019 cm-3, respectively.

Using atomistic simulations to model cadmium telluride thin film growth

NASA Astrophysics Data System (ADS)

Yu, Miao; Kenny, Steven D.

2016-03-01

Cadmium telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to conduct research on how defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. On-the-fly kinetic Monte Carlo technique is used to simulate the CdTe thin film growth on the (1 1 1) surfaces. The results show that on the (1 1 1) surfaces the growth mechanisms on surfaces which are terminated by Cd or Te are quite different, regardless of the deposition energy (0.1∼ 10 eV). On the Te-terminated (1 1 1) surface the deposited clusters first form a single mixed species layer, then the Te atoms in the mixed layer moved up to form a new layer. Whilst on the Cd-terminated (1 1 1) surface the new Cd and Te layers are formed at the same time. Such differences are probably caused by stronger bonding between ad-atoms and surface atoms on the Te layer than on the Cd layer.

Nucleation and Early Stages of Layer-by-Layer Growth of Metal Organic Frameworks on Surfaces

PubMed Central

2015-01-01

High resolution atomic force microscopy (AFM) is used to resolve the evolution of crystallites of a metal organic framework (HKUST-1) grown on Au(111) using a liquid-phase layer-by-layer methodology. The nucleation and faceting of individual crystallites is followed by repeatedly imaging the same submicron region after each cycle of growth and we find that the growing surface is terminated by {111} facets leading to the formation of pyramidal nanostructures for [100] oriented crystallites, and triangular [111] islands with typical lateral dimensions of tens of nanometres. AFM images reveal that crystallites can grow by 5–10 layers in each cycle. The growth rate depends on crystallographic orientation and the morphology of the gold substrate, and we demonstrate that under these conditions the growth is nanocrystalline with a morphology determined by the minimum energy surface. PMID:26709359

Article and method for making an article

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacy, Benjamin Paul; Schick, David Edward; Kottilingam, Srikanth Chandrudu

An article and a method for making shaped cooling holes in an article are provided. The method includes the steps of providing a metal alloy powder; forming an initial layer with the metal alloy powder, the initial layer having a preselected thickness and a preselected shape, the preselected shape including at least one aperture; sequentially forming an additional layer over the initial layer with the metal alloy powder, the additional layer having a second preselected thickness and a second preselected shape, the second preselected shape including at least one aperture corresponding to the at least one aperture in the initialmore » layer; and joining the additional layer to the initial layer, forming a structure having a predetermined thickness, a predetermined shape, and at least one aperture having a predetermined profile. The structure is attached to a substrate to make the article.« less

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

2015-10-01

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

Optimization of cell seeding in a 2D bio-scaffold system using computational models.

PubMed

Ho, Nicholas; Chua, Matthew; Chui, Chee-Kong

2017-05-01

The cell expansion process is a crucial part of generating cells on a large-scale level in a bioreactor system. Hence, it is important to set operating conditions (e.g. initial cell seeding distribution, culture medium flow rate) to an optimal level. Often, the initial cell seeding distribution factor is neglected and/or overlooked in the design of a bioreactor using conventional seeding distribution methods. This paper proposes a novel seeding distribution method that aims to maximize cell growth and minimize production time/cost. The proposed method utilizes two computational models; the first model represents cell growth patterns whereas the second model determines optimal initial cell seeding positions for adherent cell expansions. Cell growth simulation from the first model demonstrates that the model can be a representation of various cell types with known probabilities. The second model involves a combination of combinatorial optimization, Monte Carlo and concepts of the first model, and is used to design a multi-layer 2D bio-scaffold system that increases cell production efficiency in bioreactor applications. Simulation results have shown that the recommended input configurations obtained from the proposed optimization method are the most optimal configurations. The results have also illustrated the effectiveness of the proposed optimization method. The potential of the proposed seeding distribution method as a useful tool to optimize the cell expansion process in modern bioreactor system applications is highlighted. Copyright © 2017 Elsevier Ltd. All rights reserved.

ZnO and related materials: Plasma-Assisted molecular beam epitaxial growth, characterization and application

NASA Astrophysics Data System (ADS)

Hong, S. K.; Chen, Y.; Ko, H. J.; Wenisch, H.; Hanada, T.; Yao, T.

2001-06-01

This paper will address features of plasma-assisted molecular beam epitaxial growth of ZnO and related materials and their characteristics. Two-dimensional, layer-by-layer growth is achieved both on c-plane sampphire by employing MgO buffer layer growth and on (0001) GaN/Al2O3 template by predepositing a low-temperature buffer layer followed by high-temperature annealing. Such two-dimensional growth results in the growth of high-quality heteroepitaxial ZnO epilayers. Biexciton emission is obtained from such high quality epilayers The polarity of heteroepitaxial ZnO epilayers is controlled by engineering the heterointerfaces. We achieved selective growth of Zn-polar and O-polar ZnO heteroepitaxial layers. The origin of different polarities can be successfully explained by an interface bonding sequence model. N-type conductivity in Gadoped ZnO epilayers is successfully controlled. High conductivity, enough to be applicable to devices, is achieved. MgxZn1-xO/ZnO heterostructures are grown and emission from a ZnO quantum well is observed. Mg incorporation in a MgZnO alloy is determined by in-situ reflection high-energy electron diffraction intensity oscillations, which enables precise control of the composition. Homoepitaxy on commericial ZnO substrates has been examined. Reflection high-energy electron diffraction intensity oscillations during homoepitaxy growth are observed.

Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum

NASA Astrophysics Data System (ADS)

Jokubavicius, Valdas; Sun, Jianwu; Liu, Xinyu; Yazdi, Gholamreza; Ivanov, Ivan. G.; Yakimova, Rositsa; Syväjärvi, Mikael

2016-08-01

We demonstrate growth of thick SiC layers (100-200 μm) on nominally on-axis hexagonal substrates using sublimation epitaxy in vacuum (10-5 mbar) at temperatures varying from 1700 to 1975 °C with growth rates up to 270 μm/h and 70 μm/h for 6H- and 4H-SiC, respectively. The stability of hexagonal polytypes are related to process growth parameters and temperature profile which can be engineered using different thermal insulation materials and adjustment of the induction coil position with respect to the graphite crucible. We show that there exists a range of growth rates for which single-hexagonal polytype free of foreign polytype inclusions can be maintained. Further on, foreign polytypes like 3C-SiC can be stabilized by moving out of the process window. The applicability of on-axis growth is demonstrated by growing a 200 μm thick homoepitaxial 6H-SiC layer co-doped with nitrogen and boron in a range of 1018 cm-3 at a growth rate of about 270 μm/h. Such layers are of interest as a near UV to visible light converters in a monolithic white light emitting diode concept, where subsequent nitride-stack growth benefits from the on-axis orientation of the SiC layer.

Predictions and Studies with a One-Dimensional Ice/Ocean Model.

DTIC Science & Technology

1987-04-01

Description of the model c. Initial conditions and forcing Two different test cases are used for model valiCa- tion and scientific studies. One is the...the density of ice (0.92 g/cm 3), AS/J(O0 is and y-components of the current velocity, w the z-com- the salinity difference per mill, assumed to be 30... different treatments of the mixed layer on the Semtner, quickly develops in the CML simulation. In growth and decay of ice. Henceforth, Semtner’s model

Generating Inviscid and Viscous Fluid Flow Simulations over a Surface Using a Quasi-simultaneous Technique

NASA Technical Reports Server (NTRS)

Sturdza, Peter (Inventor); Martins-Rivas, Herve (Inventor); Suzuki, Yoshifumi (Inventor)

2014-01-01

A fluid-flow simulation over a computer-generated surface is generated using a quasi-simultaneous technique. The simulation includes a fluid-flow mesh of inviscid and boundary-layer fluid cells. An initial fluid property for an inviscid fluid cell is determined using an inviscid fluid simulation that does not simulate fluid viscous effects. An initial boundary-layer fluid property a boundary-layer fluid cell is determined using the initial fluid property and a viscous fluid simulation that simulates fluid viscous effects. An updated boundary-layer fluid property is determined for the boundary-layer fluid cell using the initial fluid property, initial boundary-layer fluid property, and an interaction law. The interaction law approximates the inviscid fluid simulation using a matrix of aerodynamic influence coefficients computed using a two-dimensional surface panel technique and a fluid-property vector. An updated fluid property is determined for the inviscid fluid cell using the updated boundary-layer fluid property.

Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures

NASA Astrophysics Data System (ADS)

Crook, Adam M.; Nair, Hari P.; Ferrer, Domingo A.; Bank, Seth R.

2011-08-01

We present a growth method that overcomes the mismatch in rotational symmetry of ErAs and conventional III-V semiconductors, allowing for epitaxially integrated semimetal/semiconductor heterostructures. Transmission electron microscopy and reflection high-energy electron diffraction reveal defect-free overgrowth of ErAs layers, consisting of >2× the total amount of ErAs that can be embedded with conventional layer-by-layer growth methods. We utilize epitaxial ErAs nanoparticles, overgrown with GaAs, as a seed to grow full films of ErAs. Growth proceeds by diffusion of erbium atoms through the GaAs spacer, which remains registered to the underlying substrate, preventing planar defect formation during subsequent GaAs growth. This growth method is promising for metal/semiconductor heterostructures that serve as embedded Ohmic contacts to epitaxial layers and epitaxially integrated active plasmonic devices.

Layer 6 cortical neurons require Reelin-Dab1 signaling for cellular orientation, Golgi deployment, and directed neurite growth into the marginal zone.

PubMed

O'Dell, Ryan S; Ustine, Candida J M; Cameron, David A; Lawless, Sean M; Williams, Rebecca M; Zipfel, Warren R; Olson, Eric C

2012-07-07

The secreted ligand Reelin is believed to regulate the translocation of prospective layer 6 (L6) neocortical neurons into the preplate, a loose layer of pioneer neurons that overlies the ventricular zone. Recent studies have also suggested that Reelin controls neuronal orientation and polarized dendritic growth during this period of early cortical development. To explicitly characterize and quantify how Reelin controls this critical aspect of neurite initiation and growth we used a new ex utero explant model of early cortical development to selectively label a subset of L6 cortical neurons for complete 3-D reconstruction. The total neurite arbor sizes of neurons in Reelin-deficient (reeler mutant) and Dab1-deficient (Reelin-non-responsive scrambler mutant) cortices were quantified and unexpectedly were not different than control arbor lengths (p = 0.51). For each mutant, however, arbor organization was markedly different: mutant neurons manifested more primary processes (neurites emitted directly from the soma) than wild type, and these neurites were longer and displayed less branching. Reeler and scrambler mutant neurites extended tangentially rather than radially, and the Golgi apparatus that normally invests the apical neurite was compact in both reeler and scrambler mutants. Mutant cortices also exhibited a neurite "exclusion zone" which was relatively devoid of L6 neuron neurites and extended at least 15 μm beneath the pial surface, an area corresponding to the marginal zone (MZ) in the wild type explants. The presence of an exclusion zone was also indicated in the orientation of mutant primary neurite and neuronal somata, which failed to adopt angles within ~20˚ of the radial line to the pial surface. Injection of recombinant Reelin to reeler, but not scrambler, mutant cortices fully rescued soma orientation, Golgi organization, and dendritic projection defects within four hrs. These findings indicate Reelin promotes directional dendritic growth into the MZ, an otherwise exclusionary zone for L6 neurites.

Biogeochemistry of Stinking Springs, Utah. Part II: Microbial Diversity and Photo- and Chemo-Autotrophic Growth Rates in a Layered Microbial Mat

NASA Astrophysics Data System (ADS)

Monteverde, D.; Metzger, J. G.; Bournod, C.; Kelly, H.; Johnson, H.; Sessions, A. L.; Osburn, M.; Shapiro, R. S.; Rideout, J.; Johnston, D. T.; Stevenson, B.; Stamps, B. W.; Vuono, D.; Hanselmann, K.; Spear, J. R.

2013-12-01

Layered microbial mats have garnered attention for their high phylogenetic diversity and exploitation of geochemical gradients often on the mm scale. However, despite their novelty and implications for early life diversification, little is known about layered microbial mat growth rates or the interdependence of the microbial communities within the system. Stinking Springs, a warm, sulfidic, saline spring northeast of the Great Salt Lake, serves as our test-site to investigate some of these questions. Stinking Springs undergoes downstream changes in pH (6.59-8.14), sulfide (527μM - below detection), sulfate (13-600μM), TCO2 (7.77-3.71mM), and temperature (40-21°C) along its ~150m flow path. The first 10m of discharge is channelized, beyond that, the spring supports a 10 to 40mm-thick layered microbial mat covering ~40% of the total spring runoff area. The mat was divided into four texturally-distinct layers which were each analyzed for 16S rRNA, lipid abundance, and bicarbonate and acetate uptake rates in addition to standard microscopy analyses. 16S rRNA analyses confirmed high taxa diversity within each layer, which varied significantly in taxa makeup such that no single phylum dominated the abundance (>33%) in more than one mat layer. The taxonomic diversity tended to increase with mat depth, a similar finding to other studies on layered microbial mats. A mat sampling transect across 16 meters showed that layer taxonomic diversity was conserved horizontally for all four mat layers, which implies mat depth has a larger control on diversity than physical or chemical parameters. Microscopy indicated the presence of diatoms in all layers which was confirmed by lipid abundance of sterols and long-branch fatty acid methyl esters. Incubation experiments were conducted in light and dark conditions over 24 hours with separate 13C-tagged bicarbonate and acetate additions. Heterotrophic growth rates (acetate uptake; 0.03-0.65%/day) were higher than autotrophic growth rates (bicarbonate uptake; 0-0.16%/day) under both dark and light conditions. Light conditions yielded higher growth rates for both heterotrophs and autotrophs and the highest rates were consistently found in the top mat layer and decreased with depth. The addition of 13C-acetate and concomitant high uptake is a measure of potential heterotrophy since in situ acetate concentrations are unlikely to be as high. 13C-bicarbonate uptake, on the other hand, should quantitatively represent the autotrophic growth rate. The Stinking Spring layered microbial mats display high taxonomic diversity, which is conserved horizontally across distances of meters and varies significantly with depth. Mats experience highest growth in the surface layer likely driven by phototrophs; high rates of bicarbonate uptake in the dark indicate considerable chemoautotrophy. Covariation in the heterotroph growth rates and 16S rRNA heterotroph abundance with mat depth indicates that heterotrophy may play an important role in the growth of these layered mats.

Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nepal, Neeraj; Anderson, Virginia R.; Johnson, Scooter D.

The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities duemore » to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ~0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to understand nucleation and growth mechanisms of ALEp to enable improvement in material quality and broaden its application.« less

Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO2 substratum

NASA Astrophysics Data System (ADS)

Junige, Marcel; Löffler, Markus; Geidel, Marion; Albert, Matthias; Bartha, Johann W.; Zschech, Ehrenfried; Rellinghaus, Bernd; van Dorp, Willem F.

2017-09-01

Area selectivity is an emerging sub-topic in the field of atomic layer deposition (ALD), which employs opposite nucleation phenomena to distinct heterogeneous starting materials on a surface. In this paper, we intend to grow Ru exclusively on locally pre-defined Pt patterns, while keeping a SiO2 substratum free from any deposition. In a first step, we study in detail the Ru ALD nucleation on SiO2 and clarify the impact of the set-point temperature. An initial incubation period with actually no growth was revealed before a formation of minor, isolated RuO x islands; clearly no continuous Ru layer formed on SiO2. A lower temperature was beneficial in facilitating a longer incubation and consequently a wider window for (inherent) selectivity. In a second step, we write C-rich Pt micro-patterns on SiO2 by focused electron-beam-induced deposition (FEBID), varying the number of FEBID scans at two electron beam acceleration voltages. Subsequently, the localized Pt(C) deposits are pre-cleaned in O2 and overgrown by Ru ALD. Already sub-nanometer-thin Pt(C) patterns, which were supposedly purified into some form of Pt(O x ), acted as very effective activation for the locally restricted, thus area-selective ALD growth of a pure, continuous Ru covering, whereas the SiO2 substratum sufficiently inhibited towards no growth. FEBID at lower electron energy reduced unwanted stray deposition and achieved well-resolved pattern features. We access the nucleation phenomena by utilizing a hybrid metrology approach, which uniquely combines in-situ real-time spectroscopic ellipsometry, in-vacuo x-ray photoelectron spectroscopy, ex-situ high-resolution scanning electron microscopy, and mapping energy-dispersive x-ray spectroscopy.

Seed layer effect on different properties and UV detection capability of hydrothermally grown ZnO nanorods over SiO2/p-Si substrate

NASA Astrophysics Data System (ADS)

Sannakashappanavar, Basavaraj S.; Byrareddy, C. R.; Kumar, Pesala Sudheer; Yadav, Aniruddh Bahadur

2018-05-01

Hydrothermally grown one dimensional ZnO nanostructures are among the most widely used semiconductor materials to build high-efficiency electronic devices for various applications. Few researchers have addressed the growth mechanism and effect of ZnO seed layer on different properties of ZnO nanorods grown by hydrothermal method, instead, no one has synthesized ZnO nanorod over SiO2/p-Si substrate. The aim of this study is to study the effect of ZnO seed layer and the growth mechanism of ZnO nanorods over SiO2/p-Si substrate. To achieve the goal, we have synthesized ZnO nanorods over different thickness ZnO seed layers by using the hydrothermal method on SiO2/p-Si substrate. The effects of c-plane area ratio were identified for the growth rate of c-plane, reaction rate constant and stagnant layer thickness also calculated by using a modified rate growth equation. We have identified maximum seed layer thickness for the growth of vertical ZnO nanorod. A step dislocation in the ZnO nanorods grown on 150and 200 nm thick seed layers was observed, the magnitude of Burges vector was calculated for this disorder. The seed layer and ZnO nanorods were characterized by AFM, XPS, UV-visible, XRD (X-ray diffraction, and SEM(scanning electron microscope). To justify the application of the grown ZnO nanorods Ti/Au was deposited over ZnO nanorods grown over all seed layers for the fabrication of photoconductor type UV detector.

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarpi, B.; Daineche, R.; Girardeaux, C.

Using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, and low energy electron diffraction, we have studied the growth of Mg deposited on Si(100)-(2 × 1). Coverage from 0.05 monolayer (ML) to 3 ML was investigated at room temperature. The growth mode of the magnesium is a two steps process. At very low coverage, there is formation of an amorphous ultrathin silicide layer with a band gap of 0.74 eV, followed by a layer-by-layer growth of Mg on top of this silicide layer. Topographic images reveal that each metallic Mg layer is formed by 2D islands coalescence process on top of the silicidemore » interfacial layer. During oxidation of the Mg monolayer, the interfacial silicide layer acts as diffusion barrier for the oxygen atoms with a decomposition of the silicide film to a magnesium oxide as function of O{sub 2} exposure.« less

On the genetic control of planar growth during tissue morphogenesis in plants.

PubMed

Enugutti, Balaji; Kirchhelle, Charlotte; Schneitz, Kay

2013-06-01

Tissue morphogenesis requires extensive intercellular communication. Plant organs are composites of distinct radial cell layers. A typical layer, such as the epidermis, is propagated by stereotypic anticlinal cell divisions. It is presently unclear what mechanisms coordinate cell divisions relative to the plane of a layer, resulting in planar growth and maintenance of the layer structure. Failure in the regulation of coordinated growth across a tissue may result in spatially restricted abnormal growth and the formation of a tumor-like protrusion. Therefore, one way to approach planar growth control is to look for genetic mutants that exhibit localized tumor-like outgrowths. Interestingly, plants appear to have evolved quite robust genetic mechanisms that govern these aspects of tissue morphogenesis. Here we provide a short summary of the current knowledge about the genetics of tumor formation in plants and relate it to the known control of coordinated cell behavior within a tissue layer. We further portray the integuments of Arabidopsis thaliana as an excellent model system to study the regulation of planar growth. The value of examining this process in integuments was established by the recent identification of the Arabidopsis AGC VIII kinase UNICORN as a novel growth suppressor involved in the regulation of planar growth and the inhibition of localized ectopic growth in integuments and other floral organs. An emerging insight is that misregulation of central determinants of adaxial-abaxial tissue polarity can lead to the formation of spatially restricted multicellular outgrowths in several tissues. Thus, there may exist a link between the mechanisms regulating adaxial-abaxial tissue polarity and planar growth in plants.

Influence of Freestream and Forced Disturbances on the Shear Layers of a Square Prism

NASA Astrophysics Data System (ADS)

Lander, Daniel Chapman

Flow around the square prism, an archetypal bluff body, has applications in all areas of fluid mechanics: vibration, mixing, combustion and noise production to name a few. It also has distinct importance to wind loading on architectural and industrial structures such as tall buildings, bridges, and towers. The von-Karman (VK) vortex street is a major reason for its significance: a flow phenomenon which has received intense scrutiny from scientific and engineering communities for more than 100 years! However, the characteristics of the shear layers separating from the sharp edges, essential to the vortex shedding, have received comparatively little attention. This is surprising considering the Kelvin-Helmholtz (KH) instability of shear layers produce the first signatures of turbulence in the wake. Furthermore, the shear layers are conduits for the passage of vorticity between the boundary layer and the turbulent wake. Many details of their structure and role in the shedding process remain unexplored. This dissertation aims to address this deficiency. Specifically, this project considered the influence of three variables on the characteristics of the transition-to-turbulence in the square prism shear layers. These are: (1) Reynolds number; (2) freestream disturbances and (3) forced disturbances. In each case, the dynamics of the shear layer-wake interaction were considered. Particle image velocimetry and constant temperature anemometry measurements were used to document the shear layer during inception and evolution as it passes into the wake. With increasing Reynolds number, ReD = UinfinityD/nu, in the range 16,700-148,000, the transition-to-turbulence in the initially laminar shear layer moves toward separation. A coordinate system local to the time-averaged shear layer axis was used such that the tangent and normal velocities, turbulent stresses and gradient quantities could be obtained for the curved shear layer. Characteristic frequencies, lengths and transition points of the KH instability were documented and shown to exhibit features distinct from the plane mixing layer. The evolution of the integrated turbulent kinetic energy was documented and a linear region of growth was associated with the amplification of the KH instability. A scaling relationship of the Kelvin-Helmholtz to von-Karman frequencies was established for the square prism shear layer. ƒKH/ƒ VK was shown to be a power-law function of Re D, with differing characteristics to the much more studied circular cylinder. Increasing ReD up to ˜ 70,000 bolsters the Reynolds stresses in the shear layers as they enter the wake, shortening the wake formation length, LF. The shear layer diffusion length, LD was quantified and the Gerrard-Product, LF x LD, was introduced to account for constant St D in the presence of the reduced LF as function of ReD. A freestream disturbance condition with intensity □ u¯¯ 2¯ / U infinity = 0.065 and longitudinal integral length scale, Lxu = 0.33 was considered for the case of ReD = 50,000. Disturbances were introduced by means of small circular cylinder placed upstream of the stagnation streamline. The disturbance moved the time-averaged position of the shear layer towards the body but did not substantially alter the growth rate of its width. The "normal" transition-to-turbulence pathway, via laminar vortex formation and subsequent pairing of vortices in the initial stages of the shear layer was shown to be highly sensitive to external disturbances. The disturbance interrupted the typical transition pathway and was associated with a Bypass-transition mechanism, which subsequently increased the likelihood of intermittent shear layer reattachment on the downstream surface of the body. Triple decomposition was used to study the random and coherent components of the VK structures in the wake. Data indicated a narrowing and lengthening of the wake, which was accompanied by a rise in base pressure and a reduction in time-averaged drag. The unsteady coherent vorticity field revealed a streamwise elongation of the VK vortex structures, which complemented the time-averaged wake lengthening. It appears that the influence of freestream disturbances, in particular, by their stochastic nature, is to suppress the formation of the coherent structures in the shear layer. Forced disturbances imposed on the shear layers at the leading edges of the square prism were considered at ReD=16,700 for excitation frequencies ƒe = ƒ KH, ƒVK and 0. The response of the shear layer to forcing at steady and ƒVK frequencies had little impact on the time-averaged position or growth.

High Aflatoxin Production on a Chemically Defined Medium 1

PubMed Central

Reddy, T. V.; Viswanathan, L.; Venkitasubramanian, T. A.

1971-01-01

Aspergillus parasiticus ATCC 15517 produced 28 to 30 mg of aflatoxin per 100 ml of a medium containing sucrose, asparagine, and salts in stationary and shaken cultures. In the absence of asparagine in the medium, the toxin yields fell drastically, and the thin-layer chromatograms of the chloroform extracts of the cultures indicated the total absence of aflatoxin G1 and the presence of new intense blue and green fluorescent bands having RF values lower than aflatoxins. Initial pH was critical and had to be around 4.5 for good growth and high toxin production on this medium. Optimum concentrations of KH2PO4 and MgSO4·7H2O in the medium were much lower than those normally used in fungal growth media. PMID:5119206

Observation of dual-mode, Kelvin-Helmholtz instability vortex merger in a compressible flow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, W. C.; Malamud, Guy; Shimony, A.

Here, we report the first observations of Kelvin-Helmholtz vortices evolving from well-characterized, dual-mode initial conditions in a steady, supersonic flow. The results provide the first measurements of the instability's vortex merger rate and supplement data on the inhibition of the instability's growth rate in a compressible flow. These experimental data were obtained by sustaining a shockwave over a foam-plastic interface with a precision-machined seed perturbation. This technique produced a strong shear layer between two plasmas at high-energy-density conditions. The system was diagnosed using x-ray radiography and was well-reproduced using hydrodynamic simulations. Experimental measurements imply that we observed the anticipated vortexmore » merger rate and growth inhibition for supersonic shear flow.« less

Observation of dual-mode, Kelvin-Helmholtz instability vortex merger in a compressible flow

DOE PAGES

Wan, W. C.; Malamud, Guy; Shimony, A.; ...

2017-04-25

Here, we report the first observations of Kelvin-Helmholtz vortices evolving from well-characterized, dual-mode initial conditions in a steady, supersonic flow. The results provide the first measurements of the instability's vortex merger rate and supplement data on the inhibition of the instability's growth rate in a compressible flow. These experimental data were obtained by sustaining a shockwave over a foam-plastic interface with a precision-machined seed perturbation. This technique produced a strong shear layer between two plasmas at high-energy-density conditions. The system was diagnosed using x-ray radiography and was well-reproduced using hydrodynamic simulations. Experimental measurements imply that we observed the anticipated vortexmore » merger rate and growth inhibition for supersonic shear flow.« less

Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor–liquid–solid technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

LeBoeuf, J. L., E-mail: jerome.leboeuf@mail.mcgill.ca; Brodusch, N.; Gauvin, R.

2014-12-28

A novel method has been optimized so that adhesion layers are no longer needed to reliably deposit patterned gold structures on amorphous substrates. Using this technique allows for the fabrication of amorphous oxide templates known as micro-crucibles, which confine a vapor–liquid–solid (VLS) catalyst of nominally pure gold to a specific geometry. Within these confined templates of amorphous materials, faceted silicon crystals have been grown laterally. The novel deposition technique, which enables the nominally pure gold catalyst, involves the undercutting of an initial chromium adhesion layer. Using electron backscatter diffraction it was found that silicon nucleated in these micro-crucibles were 30%more » single crystals, 45% potentially twinned crystals and 25% polycrystals for the experimental conditions used. Single, potentially twinned, and polycrystals all had an aversion to growth with the (1 0 0) surface parallel to the amorphous substrate. Closer analysis of grain boundaries of potentially twinned and polycrystalline samples revealed that the overwhelming majority of them were of the 60° Σ3 coherent twin boundary type. The large amount of coherent twin boundaries present in the grown, two-dimensional silicon crystals suggest that lateral VLS growth occurs very close to thermodynamic equilibrium. It is suggested that free energy fluctuations during growth or cooling, and impurities were the causes for this twinning.« less

Sandwich-structured C/C-SiC composites fabricated by electromagnetic-coupling chemical vapor infiltration.

PubMed

Hu, Chenglong; Hong, Wenhu; Xu, Xiaojing; Tang, Sufang; Du, Shanyi; Cheng, Hui-Ming

2017-10-13

Carbon fiber (CF) reinforced carbon-silicon carbide (C/C-SiC) composites are one of the most promising lightweight materials for re-entry thermal protection, rocket nozzles and brake discs applications. In this paper, a novel sandwich-structured C/C-SiC composite, containing two exterior C/SiC layers, two gradient C/C-SiC layers and a C/C core, has been designed and fabricated by two-step electromagnetic-coupling chemical vapor infiltration (E-CVI) for a 20-hour deposition time. The cross-section morphologies, interface microstructures and SiC-matrix growth characteristics and compositions of the composites were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD), respectively. Microstructure characterization indicates that the SiC growth includes an initial amorphous SiC zone, a gradual crystallization of SiC and grow-up of nano-crystal, and a columnar grain region. The sandwich structure, rapid deposition rate and growth characteristics are attributed to the formation of thermal gradient and the establishment of electromagnetic field in the E-CVI process. The composite possesses low density of 1.84 g/cm 3 , high flexural strength of 325 MPa, and low linear ablation rate of 0.38 μm/s under exposure to 5-cycle oxyacetylene flame for 1000 s at ~1700 °C.

Epitaxial Growth of Rhenium with Sputtering

DTIC Science & Technology

2016-05-06

corresponds to two atomic Re layers , considering that the c-axis lattice constant of the tri- atomic layered hcp Re unit cell is ~4.5 Å. Frequently, two...Å) corresponds to two Re atomic layers since the c-axis lattice constant of hcp Re, which is composed of three Re atomic layers , is ~4.5 Å...The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin (~2 nm) seed layer

Synthesis of millimeter-scale transition metal dichalcogenides single crystals

DOE PAGES

Gong, Yongji; Ye, Gonglan; Lei, Sidong; ...

2016-02-10

The emergence of semiconducting transition metal dichalcogenide (TMD) atomic layers has opened up unprecedented opportunities in atomically thin electronics. Yet the scalable growth of TMD layers with large grain sizes and uniformity has remained very challenging. Here is reported a simple, scalable chemical vapor deposition approach for the growth of MoSe2 layers is reported, in which the nucleation density can be reduced from 105 to 25 nuclei cm -2, leading to millimeter-scale MoSe 2 single crystals as well as continuous macrocrystalline films with millimeter size grains. The selective growth of monolayers and multilayered MoSe2 films with well-defined stacking orientation canmore » also be controlled via tuning the growth temperature. In addition, periodic defects, such as nanoscale triangular holes, can be engineered into these layers by controlling the growth conditions. The low density of grain boundaries in the films results in high average mobilities, around ≈42 cm 2 V -1 s -1, for back-gated MoSe 2 transistors. This generic synthesis approach is also demonstrated for other TMD layers such as millimeter-scale WSe 2 single crystals.« less

Impurity-induced disorder in III-nitride materials and devices

DOEpatents

Wierer, Jr., Jonathan J; Allerman, Andrew A

2014-11-25

A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

The radial growth phase of malignant melanoma: multi-phase modelling, numerical simulations and linear stability analysis.

PubMed

Ciarletta, P; Foret, L; Ben Amar, M

2011-03-06

Cutaneous melanoma is disproportionately lethal despite its relatively low incidence and its potential for cure in the early stages. The aim of this study is to foster understanding of the role of microstructure on the occurrence of morphological changes in diseased skin during melanoma evolution. The authors propose a biomechanical analysis of its radial growth phase, investigating the role of intercellular/stromal connections on the initial stages of epidermis invasion. The radial growth phase of a primary melanoma is modelled within the multi-phase theory of mixtures, reproducing the mechanical behaviour of the skin layers and of the epidermal-dermal junction. The theoretical analysis takes into account those cellular processes that have been experimentally observed to disrupt homeostasis in normal epidermis. Numerical simulations demonstrate that the loss of adhesiveness of the melanoma cells both to the basal laminae, caused by deregulation mechanisms of adherent junctions, and to adjacent keratynocytes, consequent to a downregulation of E-cadherin, are the fundamental biomechanical features for promoting tumour initiation. Finally, the authors provide the mathematical proof of a long wavelength instability of the tumour front during the early stages of melanoma invasion. These results open the perspective to correlate the early morphology of a growing melanoma with the biomechanical characteristics of its micro-environment.

Initial formation behaviour of polypyrrole on single crystal TiO2 through photo-electrochemical reaction.

PubMed

Kawakita, Jin; Weitzel, Matthias

2011-04-01

Hybrid materials of the organic and inorganic semiconductors have a potential to show the better performance in the charge separation at the junction upon the photovoltaic action by the presence of the space charge layer in the inorganic semiconductor. In this study, the photo-anodic polymerization was selected as a fabrication method for the hybrid materials composed of TiO2 and polypyrrole on the basis of some advantages of this method. For the process control of the photo-anodic polymerization, it is important to elucidate the formation and growth mechanisms of the organic polymer. In this study, a flat sheet of single-crystal TiO2 was used as a well-defined surface for preparation of the organic polymer of pyrrole. Photo-anodic polarization behaviour was clarified and polypyrrole was prepared on TiO2. The formation process, especially the initial step was revealed by observation of polypyrrole with atomic force microscope (AFM) and statistical interpretation of the morphology of polypyrrole in the nano-scopic level. The formation process of polypyrrole on the TiO2 surface was summarized; (1) adsorption of precursors, (2) localized formation and growth of polypyrrole under the photo-illumination, and (3) homogenous growth of polypyrrole with the external current application under the photo-illumination.

The radial growth phase of malignant melanoma: multi-phase modelling, numerical simulations and linear stability analysis

PubMed Central

Ciarletta, P.; Foret, L.; Ben Amar, M.

2011-01-01

Cutaneous melanoma is disproportionately lethal despite its relatively low incidence and its potential for cure in the early stages. The aim of this study is to foster understanding of the role of microstructure on the occurrence of morphological changes in diseased skin during melanoma evolution. The authors propose a biomechanical analysis of its radial growth phase, investigating the role of intercellular/stromal connections on the initial stages of epidermis invasion. The radial growth phase of a primary melanoma is modelled within the multi-phase theory of mixtures, reproducing the mechanical behaviour of the skin layers and of the epidermal–dermal junction. The theoretical analysis takes into account those cellular processes that have been experimentally observed to disrupt homeostasis in normal epidermis. Numerical simulations demonstrate that the loss of adhesiveness of the melanoma cells both to the basal laminae, caused by deregulation mechanisms of adherent junctions, and to adjacent keratynocytes, consequent to a downregulation of E-cadherin, are the fundamental biomechanical features for promoting tumour initiation. Finally, the authors provide the mathematical proof of a long wavelength instability of the tumour front during the early stages of melanoma invasion. These results open the perspective to correlate the early morphology of a growing melanoma with the biomechanical characteristics of its micro-environment. PMID:20656740

Enzyme-assisted growth of nacreous CaCO3/polymer hybrid nanolaminates via the formation of mineral bridges

NASA Astrophysics Data System (ADS)

Yeom, Bongjun; Char, Kookheon

2016-06-01

Laminated nanostructures in nacre have been adopted as models in the fabrication of strong, tough synthetic nanocomposites. However, the utilization of CaCO3 biominerals in these composites is limited by the complexity of the synthesis method for nanosized biominerals. In this study, we use the enzymatic reaction of urease to generate a nanoscale CaCO3 thin film to prepare CaCO3/polymer hybrid nanolaminates. Additional layers of CaCO3 thin film are consecutively grown over the base CaCO3 layer with the intercalation of organic layers. The morphology and crystallinity of the added CaCO3 layers depend strongly on the thickness of the organic layer coated on the underlying CaCO3 layer. When the organic layer is less than 20 nm thick, the amorphous CaCO3 layer is spontaneously transformed into crystalline calcite layer during the growth process. We also observe crystalline continuity between adjacent CaCO3 layers through interconnecting mineral bridges. The formation of these mineral bridges is crucial to the epitaxial growth of CaCO3 layers, similar to the formation of natural nacre.

The Morphology of Silver Layers on SU8 polymers prepared by Electroless Deposition

NASA Astrophysics Data System (ADS)

Dutta, Aniruddha; Yuan, Biao; Heinrich, Helge; Grabill, Chris; Williams, Henry; Kuebler, Stephen; Bhattacharya, Aniket

2010-03-01

Silver was deposited onto the functionalized surface of polymeric SU-8 where gold nanoparticles (Au-NPs) act as nucleation sites using electroless metallization chemistry. Here we report on the evolution of the nanoscale morphology of deposited Ag studied by Transmission Electron Microscopy (TEM). In TEM of sample cross sections correlations between the original gold and the silver nanoparticles were obtained while plan-view TEM results showed the distribution of nanoparticles on the surface. Scanning TEM with a high-angle annular dark field detector was used to obtain atomic number contrast. The morphology of the deposited Ag was controlled through the presence and absence of gum Arabic. The thickness and height fluctuations of the Ag layer were determined as a function of time and a statistical analysis of the growth process was conducted for the initial deposition periods.

Optimally growing boundary layer disturbances in a convergent nozzle preceded by a circular pipe

NASA Astrophysics Data System (ADS)

Uzun, Ali; Davis, Timothy B.; Alvi, Farrukh S.; Hussaini, M. Yousuff

2017-06-01

We report the findings from a theoretical analysis of optimally growing disturbances in an initially turbulent boundary layer. The motivation behind this study originates from the desire to generate organized structures in an initially turbulent boundary layer via excitation by disturbances that are tailored to be preferentially amplified. Such optimally growing disturbances are of interest for implementation in an active flow control strategy that is investigated for effective jet noise control. Details of the optimal perturbation theory implemented in this study are discussed. The relevant stability equations are derived using both the standard decomposition and the triple decomposition. The chosen test case geometry contains a convergent nozzle, which generates a Mach 0.9 round jet, preceded by a circular pipe. Optimally growing disturbances are introduced at various stations within the circular pipe section to facilitate disturbance energy amplification upstream of the favorable pressure gradient zone within the convergent nozzle, which has a stabilizing effect on disturbance growth. Effects of temporal frequency, disturbance input and output plane locations as well as separation distance between output and input planes are investigated. The results indicate that optimally growing disturbances appear in the form of longitudinal counter-rotating vortex pairs, whose size can be on the order of several times the input plane mean boundary layer thickness. The azimuthal wavenumber, which represents the number of counter-rotating vortex pairs, is found to generally decrease with increasing separation distance. Compared to the standard decomposition, the triple decomposition analysis generally predicts relatively lower azimuthal wavenumbers and significantly reduced energy amplification ratios for the optimal disturbances.

Semiconductor-metal nanostructures: Scanning tunneling microscopy investigation of the fullerene-gold and manganese-germanium-silicon system

NASA Astrophysics Data System (ADS)

Liu, Hui

Nanostructures, assembled from a layer or cluster of atoms with size of the order of nanometers, have attracted much attention for decades, because it has been widely recognized that the properties of nanoscale materials are remarkably different from those of materials of large scale. As one of the most powerful techniques, Scanning Tunneling Microscopy (STM) has become an indispensable technique for studies in nanotechnology. This dissertation is focused on the investigation of the C60-Au system, which is relevant in photovoltaic applications and organic electronic devices, and the Mn-Ge-Si system which is central to the development of advanced spintronics system. The first part of the dissertation focuses on the C60-Au system. Exploring how fullerene molecules interact physically and electronically with each other and with other elements is highly relevant to the advancement of fullerene-based nanotechnology applications. The initial growth stage of C 60 thin film on graphite substrate has been investigated by STM at room temperature. It is observed that the C60 layer grows in a quasi-layer-by-layer mode and forms round 1st layer islands on the graphite surface. The fractal-dendritic growth of the 2nd layer islands has been successfully described by a combination of Monte Carlo simulation and molecular dynamics simulations. As a next step towards the application of fullerenes in device structures, the growth mechanisms of Au clusters on fullerene layers and co-deposition of Au and C60 were explored. The most prominent features of the growth of Au on C60 are the preferential nucleation of Au clusters at the graphite-first fullerene layer islands edge and the co-deposition of C60 and Au on graphite leading to the formation of highly organized structures, in which Au clusters are embedded in a ring of fullerene molecules with a constant width of about 4 nm. The second part of this dissertation concentrates on the Mn-Ge-Si system, a semiconductor/metal system, which is a potential building-block structure for the development of complex spin-electronic devices. In recent years the study of thin film magnetic materials and the doping of semiconductors with magnetically active dopant atoms has received increased attention due their potential applications in magnetic memory devices and spintronics. In particular, the importance of Mn-Ge-Si system emerges since it combines a technically relevant semiconductor surface with a metallic element with a large magnetic moment. The goal in this part is the early growth stage of Mn on a Si (100) 2x1surface, the formation of Mn-nanostructure and the interaction between Mn and Ge on the Si surface. The position of Mn atoms with respect to Si surface has been determined by high resolution STM images. It is found that Mn adatoms form relatively short monoatomic wires, with a typical length of 5 to about 20 atoms, which are oriented perpendicular to the Si-dimer rows. And at the same time, the modification of Si surface around Mn wires was observed. The formation of Mn silicide after annealing the sample was also studied. The stability of Mn wires during the growth of a Ge overlayer was investigated by comparing several STM images, which were taken at different bias voltages. Because of the different local density of states, Mn and Ge may be partially distinguished in STM images. It is turned out that Mn wires preserve their structures after the deposition of a small amount of Ge on the sample. And the growth of Ge at the early stage on Si surface has not been significantly influenced by the presence of Mn adatoms. In summary, an investigation of two semiconductor-metal nanostructures by STM has been reported in this dissertation.

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer.

PubMed

Song, Jie; Han, Jung

2017-03-02

We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the GaN epilayer. The low growth temperature of the AlN buffer results in gallium-polar GaN. Even a nitridation process has been conducted. High growth temperature for an AlN buffer layer is required to achieve pure N-polarity, high crystalline quality, and smooth surface morphology for a GaN epilayer.

Nonlinear interactions in mixing layers and compressible heated round jets. Ph.D. Thesis Final Report

NASA Technical Reports Server (NTRS)

Jarrah, Yousef Mohd

1989-01-01

The nonlinear interactions between a fundamental instability mode and both its harmonics and the changing mean flow are studied using the weakly nonlinear stability theory of Stuart and Watson, and numerical solutions of coupled nonlinear partial differential equations. The first part focuses on incompressible cold (or isothermal; constant temperature throughout) mixing layers, and for these, the first and second Landau constants are calculated as functions of wavenumber and Reynolds number. It is found that the dominant contribution to the Landau constants arises from the mean flow changes and not from the higher harmonics. In order to establish the range of validity of the weakly nonlinear theory, the weakly nonlinear and numerical solutions are compared and the limitation of each is discussed. At small amplitudes and at low-to-moderate Reynolds numbers, the two results compare well in describing the saturation of the fundamental, the distortion of the mean flow, and the initial stages of vorticity roll-up. At larger amplitudes, the interaction between the fundamental, second harmonic, and the mean flow is strongly nonlinear and the numerical solution predicts flow oscillations, whereas the weakly nonlinear theory yields saturation. In the second part, the weakly nonlinear theory is extended to heated (or nonisothermal; mean temperature distribution) subsonic round jets where quadratic and cubic nonlinear interactions are present, and the Landau constants also depend on jet temperature ratio, Mach number and azimuthal mode number. Under exponential growth and nonlinear saturation, it is found that heating and compressibility suppress the growth of instability waves, that the first azimuthal mode is the dominant instability mode, and that the weakly nonlinear solution describes the early stages of the roll-up of an axisymmetric shear layer. The receptivity of a typical jet flow to pulse type input disturbance is also studied by solving the initial value problem and then examining the behavior of the long-time solution.

AxBAxB… pulsed atomic layer deposition: Numerical growth model and experiments

NASA Astrophysics Data System (ADS)

Muneshwar, Triratna; Cadien, Ken

2016-02-01

Atomic layer deposition (ALD) is widely used for the fabrication of advanced semiconductor devices and related nanoscale structures. During ALD, large precursor doses (>1000 L per pulse) are often required to achieve surface saturation, of which only a small fraction is utilized in film growth while the rest is pumped from the system. Since the metal precursor constitutes a significant cost of ALD, strategies to enhance precursor utilization are essential for the scaling of ALD processes. In the precursor reaction step, precursor physisorption is restricted by steric hindrance (mA1) from ligands on the precursor molecules. On reaction, some of these ligands are removed as by-products resulting in chemisorbed species with reduced steric hindrance (mA1 → mA2, where mA2 < mA1) and some of the initially hindered surface reaction sites becoming accessible for further precursor physisorption. To utilize these additional reaction sites, we propose a generalized AxBAxB… pulsed deposition where the total precursor dose (ΦA) is introduced as multiple x (x > 1, x ∈ I) short-pulses rather than a single pulse. A numerical first-order surface reaction kinetics growth model is presented and applied to study the effect of AxBAxB… pulsed ALD on the growth per cycle (GPC). The model calculations predict higher GPC for AxBAxB… pulsing than with ABAB… deposition. In agreement with the model predictions, with AxBAxB… pulsed deposition, the GPC was found to increase by ˜46% for ZrN plasma enhanced ALD (PEALD), ˜49% for HfO2 PEALD, and ˜8% for thermal Al2O3 ALD with respect to conventional ABAB… pulsed growth.

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance

DTIC Science & Technology

2017-02-01

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance (Invited paper) Christine A...epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on QCL operation, and establishing correlations between epitaxial growth and materials...QCLs emitting in this range. Index terms – Quantum cascade lasers, semiconductor growth, semiconductor epitaxial layers, infrared emitters. I