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Sample records for initially p-type silicon

  1. Irradiation and annealing of p-type silicon carbide

    SciTech Connect

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor'eva, Maria V.; Lebedev, Sergey P.; Kozlovski, Vitaly V.

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  2. New electron trap in p-type Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

    1984-01-01

    A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

  3. Anodic etching of p-type cubic silicon carbide

    NASA Technical Reports Server (NTRS)

    Harris, G. L.; Fekade, K.; Wongchotigul, K.

    1992-01-01

    p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA/sq cm. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm/s was obtained in a 1:1:50 HF:HCl:H2O electrolyte.

  4. Laser induced lifetime degradation in p-type crystalline silicon

    SciTech Connect

    Ametowobla, M.; Bilger, G.; Koehler, J. R.; Werner, J. H.

    2012-06-01

    Pulsed, green laser irradiation of uncoated p-type silicon leads to a significant reduction of the effective minority carrier lifetime. The reason for the lifetime drop lies in the introduction of recombination centres into the laser melted and recrystallized surface layer, leading to a low local minority carrier lifetime {tau} Almost-Equal-To 10 ns inside this surface layer. The laser treatment introduces the impurities oxygen, carbon and nitrogen into the silicon and further leads to an n-type doping of the surface layer. There are strong indications that these impurities are responsible for the observed n-type doping, as well as the lifetime reduction after irradiation. Both effects are removed by thermal annealing. An estimate shows that the low local lifetime does nevertheless not affect the performance of industrial or contacted selective solar cell emitter structures.

  5. Laser induced lifetime degradation in p-type crystalline silicon

    NASA Astrophysics Data System (ADS)

    Ametowobla, M.; Bilger, G.; Köhler, J. R.; Werner, J. H.

    2012-06-01

    Pulsed, green laser irradiation of uncoated p-type silicon leads to a significant reduction of the effective minority carrier lifetime. The reason for the lifetime drop lies in the introduction of recombination centres into the laser melted and recrystallized surface layer, leading to a low local minority carrier lifetime τ ≈ 10 ns inside this surface layer. The laser treatment introduces the impurities oxygen, carbon and nitrogen into the silicon and further leads to an n-type doping of the surface layer. There are strong indications that these impurities are responsible for the observed n-type doping, as well as the lifetime reduction after irradiation. Both effects are removed by thermal annealing. An estimate shows that the low local lifetime does nevertheless not affect the performance of industrial or contacted selective solar cell emitter structures.

  6. P type porous silicon resistivity and carrier transport

    SciTech Connect

    Ménard, S.; Fèvre, A.; Billoué, J.; Gautier, G.

    2015-09-14

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P{sub %}) was found to be the major contributor to the PS resistivity (ρ{sub PS}). ρ{sub PS} increases exponentially with P{sub %}. Values of ρ{sub PS} as high as 1 × 10{sup 9} Ω cm at room temperature were obtained once P{sub %} exceeds 60%. ρ{sub PS} was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ{sub PS}. Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P{sub %} lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P{sub %} overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices.

  7. Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

    SciTech Connect

    Sun, Chang Rougieux, Fiacre E.; Macdonald, Daniel

    2014-06-07

    Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr{sub i} and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ{sub n}/σ{sub p} of Cr{sub i} and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombination activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.

  8. Method of mitigating titanium impurities effects in p-type silicon material for solar cells

    NASA Technical Reports Server (NTRS)

    Salama, A. M. (Inventor)

    1980-01-01

    Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

  9. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    NASA Astrophysics Data System (ADS)

    Goyal, Prabal; Hong, Junegie; Haddad, Farah; Maurice, Jean-Luc; Cabarrocas, Pere Roca i.; Johnson, Erik

    2016-01-01

    The use of hexamethyldisiloxane (HMDSO) as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm) and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  10. Dual ohmic contact to N- and P-type silicon carbide

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  11. Novel method of separating macroporous arrays from p-type silicon substrate

    NASA Astrophysics Data System (ADS)

    Bobo, Peng; Fei, Wang; Tao, Liu; Zhenya, Yang; Lianwei, Wang; Fu, Ricky K. Y.; Chu, Paul K.

    2012-04-01

    This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed.

  12. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  13. Absence of positronium formation in clean buried nanocavities in p-type silicon

    SciTech Connect

    Brusa, R.S.; Macchi, C.; Mariazzi, S.; Karwasz, G.P.; Egger, W.; Sperr, P.; Koegel, G.

    2005-06-15

    Buried nanocavities at about 350 nm depth in Si were produced by thermal treatment of He implanted p-type (100) Si. The internal surfaces of the nanocavities were found free of impurity decorations by examining the high-momentum part of the Doppler-broadened positron annihilation spectra. Positron lifetime measurements with a pulsed slow positron beam show neither a short lifetime (125-150 ps) ascribable to parapositronium nor a longer lifetime (2-4 ns) ascribable to pick-off annihilation of orthopositronium. The lifetime of positrons trapped into nanocavities was found to be about 500 ps. The absence of positronium formation could be explained by an insufficient electron density and a lack of electron states in the band gap at the nanocavities internal surfaces produced in the p-type silicon.

  14. Numerical simulation of radiation damage effects in p-type silicon detectors

    NASA Astrophysics Data System (ADS)

    Petasecca, M.; Moscatelli, F.; Passeri, D.; Pignatel, G. U.; Scarpello, C.

    2006-07-01

    In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable approach to optimize the long-term radiation hardness of silicon detectors. In this work, we present a numerical model for the simulation of radiation damage effects in p-type silicon, developed within the general-purpose device simulator DESSIS. The model includes radiation-induced deep-level recombination centers in the semiconductor band-gap and the Shockley-Read-Hall statistics. In particular, two deep-level defects have been introduced: one located at EC-0.42 eV, corresponding to a single charge state divacancy and a second one located at EC-0.46 eV, corresponding to a single charge state tri-vacancy. For simulation purposes we have considered a simple, two-dimensional test structure, consisting of a single diode of 40 μm width and 300 μm depth, surrounded by a 6 μm wide guard ring. The n+ implant region depth is 1 μm, with donor concentration of ND=10 18 cm -3 implanted on a high-resistivity p-type substrate ( NA=5×10 12 cm -3). The results of simulations adopting the proposed radiation damage model for p-type substrate have been compared with experimental measurements carried out on similar test structures irradiated with neutrons at high fluence. A good agreement with the experimental data has been obtained for the depletion voltage and diode leakage current. The simulated current damage constant (α=3.75×10 -17 A cm -1) is in satisfactory agreement with values reported in the literature. A preliminary study of charge collection efficiency as a function of the fluence is also reported.

  15. Direct Measurement of Electron Beam Induced Currents in p-type Silicon

    SciTech Connect

    Han, M.G.; Zhu, Y.; Sasaki, K.; Kato, T.; Fisher, C.A.J.; Hirayama, T.

    2010-08-01

    A new method for measuring electron beam induced currents (EBICs) in p-type silicon using a transmission electron microscope (TEM) with a high-precision tungsten probe is presented. Current-voltage (I-V) curves obtained under various electron-beam illumination conditions are found to depend strongly on the current density of the incoming electron beam and the relative distance of the beam from the point of probe contact, consistent with a buildup of excess electrons around the contact. This setup provides a new experimental approach for studying minority carrier transport in semiconductors on the nanometer scale.

  16. Accelerated light-induced degradation for detecting copper contamination in p-type silicon

    SciTech Connect

    Inglese, Alessandro Savin, Hele; Lindroos, Jeanette

    2015-08-03

    Copper is a harmful metal impurity that significantly impacts the performance of silicon-based devices if present in active regions. In this contribution, we propose a fast method consisting of simultaneous illumination and annealing for the detection of copper contamination in p-type silicon. Our results show that, within minutes, such method is capable of producing a significant reduction of the minority carrier lifetime. A spatial distribution map of copper contamination can then be obtained through the lifetime values measured before and after degradation. In order to separate the effect of the light-activated copper defects from the other metastable complexes in low resistivity Cz-silicon, we carried out a dark anneal at 200 °C, which is known to fully recover the boron-oxygen defect. Similar to the boron-oxygen behavior, we show that the dark anneal also recovers the copper defects. However, the recovery is only partial and it can be used to identify the possible presence of copper contamination.

  17. Accelerated light-induced degradation for detecting copper contamination in p-type silicon

    NASA Astrophysics Data System (ADS)

    Inglese, Alessandro; Lindroos, Jeanette; Savin, Hele

    2015-08-01

    Copper is a harmful metal impurity that significantly impacts the performance of silicon-based devices if present in active regions. In this contribution, we propose a fast method consisting of simultaneous illumination and annealing for the detection of copper contamination in p-type silicon. Our results show that, within minutes, such method is capable of producing a significant reduction of the minority carrier lifetime. A spatial distribution map of copper contamination can then be obtained through the lifetime values measured before and after degradation. In order to separate the effect of the light-activated copper defects from the other metastable complexes in low resistivity Cz-silicon, we carried out a dark anneal at 200 °C, which is known to fully recover the boron-oxygen defect. Similar to the boron-oxygen behavior, we show that the dark anneal also recovers the copper defects. However, the recovery is only partial and it can be used to identify the possible presence of copper contamination.

  18. Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

    SciTech Connect

    Li, Shaoyuan; Ma, Wenhui; Zhou, Yang; Chen, Xiuhua; Xiao, Yongyin; Ma, Mingyu; Wei, Feng; Yang, Xi

    2014-05-01

    In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO{sub 3} system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO{sub 3} concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWs is significantly reduced when Ag{sup +} ions concentrations are too high. The deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon. - Graphical abstract: Schematic cross-sectional views of PSiNWs array formation by etching oxidized silicon wafer in HF/AgNO{sub 3} solution. (A) At the starting point; (B) during the etching process; and (C) after Ag dendrites remove. - Highlights: • Prior to etching, a simple pre-oxidation is firstly used to treat silicon substrate. • The medially doped p-type MPSiNWs are prepared by one-step MACE. • Deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon are studied. • A model is finally proposed to explain the formation mechanism of PSiNWs.

  19. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei; Jiang, Xuening; Xu, Hongxia

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  20. Characterization of irradiated detectors fabricated on p-type silicon substrates for super-LHC

    NASA Astrophysics Data System (ADS)

    Miñano, M.; Campabadal, F.; Escobar, C.; García, C.; González, S.; Lacasta, C.; Lozano, M.; Martí i García, S.; Pellegrini, G.; Rafí, J. M.; Ullán, M.

    2007-12-01

    An upgrade of the large hadron collider (LHC), the Super-LHC (SLHC), towards higher luminosities is currently being discussed as an extension of the LHC physics program. The goal of the SLHC is to operate at a luminosity of 10 35 cm -2 s -1 (10 times larger than that of the LHC one). Thus, the operation of the SLHC implies a need to upgrade the detectors of the LHC experiments. The current tracking system of ATLAS will not cope with that luminosity. New solutions must be investigated to improve the radiation tolerance of the semiconductor detector. p-Type bulk sensors are being considered for the ATLAS tracking system for the SLHC. Microstrip detectors fabricated by CNM-IMB on p-type high-resistivity float zone silicon have been irradiated with neutrons at the TRIGA Mark II reactor in Ljubljana up to a fluence of 10 16 cm -2 (as expected in the innermost region of the ATLAS upgrade) and have been characterized at IFIC Laboratory. The collected charge, after irradiation, has been measured by infrared laser illumination. The leakage current of those sensors is also reported.

  1. Evidence for an iron-hydrogen complex in p-type silicon

    SciTech Connect

    Leonard, S. Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-20

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90–120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at E{sub v} + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10{sup −17} cm{sup 2}. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  2. Evidence for an iron-hydrogen complex in p-type silicon

    NASA Astrophysics Data System (ADS)

    Leonard, S.; Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-01

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10-17 cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  3. Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon

    NASA Astrophysics Data System (ADS)

    Brody, Jed; Rohatgi, Ajeet

    2001-09-01

    New analytical equations are derived to approximate the effective surface recombination velocity ( Seff) on p-type silicon for three different cases: low-level injection (LLI) with surface hole concentration ( ps) much greater than surface electron concentration ( ns) and with silicon charge ( QSi) due primarily to ionized acceptors, LLI with ns≫ ps and QSi due primarily to ionized acceptors, and high-level injection with ns≫ ps and QSi due primarily to mobile electrons. The three new equations predict the dependence of Seff on individual parameters such as injection level ( Δn), doping level ( NA), and fixed dielectric charge ( Qf). The new equations complement a previously derived result (for LLI with ns≫ ps and QSi due primarily to mobile electrons) and together allow reasonable explanations to be given for all sections of all Seff vs. Δn and Seff vs. NA curves generated by a quasi-exact numerical method. The analytical approximations are compared with the full numerical solutions. Under appropriate conditions, the analytical approximations agree with the numerical solutions within a factor of 3. Guided by the analytical approximations, numerical solutions are fitted to two sets of experimental data: the injection level dependence of Seff for an oxide-passivated wafer; and the doping dependence of Seff for wafers passivated by plasma-enhanced chemical vapor deposited nitride (SiN x), conventional furnace oxide (CFO), and the SiN x/CFO stack. The SiN x/CFO stack not only provides surface passivation that is superior to either dielectric alone; it is also less doping dependent. The analytical approximations indicate that this suppressed doping dependence could be due to a lower interface state density or a higher fixed dielectric charge ( Qf).

  4. Copper-related deep-level centers in irradiated p-type silicon

    SciTech Connect

    Yarykin, Nikolai; Weber, Joerg

    2011-03-15

    Deep-level centers are investigated in the p-type Si on copper-contaminated samples which were also electron irradiated. Standard and Laplace-transform deep-level transient spectroscopy techniques were employed to characterize the samples. Several Cu-related centers are observed to form either as a result of the low-temperature Cu diffusion into the irradiated crystals or due to irradiation of the Cu-contaminated samples and subsequent annealing up to 400 deg. C. In all crystals, two Cu-related defects are found to be the most abundant; each of them possesses a pair of levels in the lower half of the gap. The Arrhenius signatures for one pair are measured to be practically identical to those for the donor and acceptor levels of substitutional copper Cu{sub s}, respectively, the levels of other defect being only barely different from the Cu{sub s} levels. Analysis of the introduction rates and depth profiles of the deep-level centers points to the vacancy-oxygen complex (VO, the A center) as the precursor of the most abundant Cu-related defects. It is inferred that Cu{sub s} is formed in irradiated silicon due to interaction with the VO centers via the rather stable intermediate CuVO complex.

  5. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  6. Surface States and Effective Surface Area on Photoluminescent P-Type Porous Silicon

    NASA Technical Reports Server (NTRS)

    Weisz, S. Z.; Porras, A. Ramirez; Resto, O.; Goldstein, Y.; Many, A.; Savir, E.

    1997-01-01

    The present study is motivated by the possibility of utilizing porous silicon for spectral sensors. Pulse measurements on the porous-Si/electrolyte system are employed to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. Such measurements were combined with studies of the photoluminescence spectra. These spectra were found to shift progressively to the blue as a function of anodization time. The luminescence intensity increases initially with anodization time, reaches a maximum and then decreases with further anodization. The surface state density, on the other hand, increases with anodization time from an initial value of about 2 x 10(exp 12)/sq cm surface to about 1013 sq cm for the anodized surface. This value is attained already after -2 min anodization and upon further anodization remains fairly constant. In parallel, the effective surface area increases by a factor of 10-30. This behavior is markedly different from the one observed previously for n-type porous Si.

  7. Evaluation of Seebeck coefficients in n- and p-type silicon nanowires fabricated by complementary metal-oxide-semiconductor technology.

    PubMed

    Hyun, Younghoon; Park, Youngsam; Choi, Wonchul; Kim, Jaehyeon; Zyung, Taehyoung; Jang, Moongyu

    2012-10-12

    Silicon-based thermoelectric nanowires were fabricated by using complementary metal-oxide-semiconductor (CMOS) technology. 50 nm width n- and p-type silicon nanowires (SiNWs) were manufactured using a conventional photolithography method on 8 inch silicon wafer. For the evaluation of the Seebeck coefficients of the silicon nanowires, heater and temperature sensor embedded test patterns were fabricated. Moreover, for the elimination of electrical and thermal contact resistance issues, the SiNWs, heater and temperature sensors were fabricated monolithically using a CMOS process. For validation of the temperature measurement by an electrical method, scanning thermal microscopy analysis was carried out. The highest Seebeck coefficients were - 169.97 μV K(-1) and 152.82 μV K(-1) and the highest power factors were 2.77 mW m(-1) K(-2) and 0.65 mW m(-1) K(-2) for n- and p-type SiNWs, respectively, in the temperature range from 200 to 300 K. The larger power factor value for n-type SiNW was due to the higher electrical conductivity. The total Seebeck coefficient and total power factor for the n- and p-leg unit device were 157.66 μV K(-1) and 9.30 mW m(-1) K(-2) at 300 K, respectively.

  8. Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

    NASA Astrophysics Data System (ADS)

    Zhang, Xinyu; Wan, Yimao; Bullock, James; Allen, Thomas; Cuevas, Andres

    2016-08-01

    This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ˜10 mΩ cm2 has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.

  9. Investigation of surface passivation schemes for p-type monocrystalline silicon solar cell

    NASA Astrophysics Data System (ADS)

    Rahman, Md. Momtazur; Udoy, Ariful Banna

    2016-10-01

    This paper represents an experiment to analyze the dark saturation current densities of passivated surfaces for monocrystalline silicon solar cells. The samples are diffused at peak temperatures of 800-950 °C. Basically, symmetrical lifetime samples with different doping profiles are prepared with alkaline textured and saw damage etched (planar) surfaces. After POCl3 diffusion, the phosphorous silicate glass layers are removed in a wet chemical etching step. Several designs are chosen for the determination of the sheet resistance ( R sh), the concentration profile for excess charge carrier and the minority carrier effective lifetime of the diffused surfaces. The dark saturation current densities ( J o ) and the doping profiles are determined accordingly via quasi-steady state photoconductance decay measurement and electrochemical capacitance-voltage measurement. Three different passivation schemes are investigated as follows: silicon nitride (SiN x ) deposited by plasma-enhanced chemical vapor deposition (PECVD) technique, silicon-rich oxynitride (SiriO x N y ) capped with a PECVD SiN x layer, and thin thermally grown oxide, capped with a PECVD SiN x layer.

  10. Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion

    SciTech Connect

    Ganagona, N. Vines, L.; Monakhov, E. V.; Svensson, B. G.

    2014-01-21

    In this work, a comprehensive study on the transition of divacancy (V{sub 2}) to divacancy-oxygen (V{sub 2}O) pairs in p-type silicon has been performed with deep level transient spectroscopy (DLTS). Czochralski grown, boron doped p-type, silicon samples, with a doping concentration of 2 × 10{sup 15} cm{sup −3} and oxygen content of 7.0 ± 1.5 × 10{sup 17} cm{sup −3}, have been irradiated with 1.8 MeV protons. Isothermal annealing at temperatures in the range of 200 °C–300 °C shows a close to one-to-one correlation between the loss in the donor state of V{sub 2} and the formation of the donor state of V{sub 2}O, located at 0.23 eV above the valence band edge. A concurrent transition takes place between the single acceptor states of V{sub 2} and V{sub 2}O, as unveiled by injection of electrons through optical excitation during the trap filling sequence of the DLTS measurements. Applying the theory for diffusion limited reactions, the diffusivity of V{sub 2} in the studied p-type samples is determined to be (1.5 ± 0.7) × 10{sup −3}exp[−(1.31 ± 0.03) eV/kT] cm{sup 2}/s, and this represents the neutral charge state of V{sub 2}. Further, the data seem to favor a two-stage diffusion mechanism involving partial dissociation of V{sub 2}, although a one-stage process cannot be fully excluded.

  11. P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environments

    NASA Astrophysics Data System (ADS)

    Printz, Martin

    2016-09-01

    In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to 1.5 ×1015neq /cm2 corresponding to 3000fb-1 after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20 cm < R < 110 cm) of CMS will consist of n-in-p type sensors. This technology is more radiation hard but also the manufacturing is more challenging compared to p-in-n type sensors due to additional process steps in order to suppress the accumulation of electrons between the readout strips. One possible isolation technique of adjacent strips is the p-stop structure which is a p-type material implantation with a certain pattern for each individual strip. However, electrical breakdown and charge collection studies indicate that the process parameters of the p-stop structure have to be carefully calibrated in order to achieve a sufficient strip isolation but simultaneously high breakdown voltages. Therefore a study of the isolation characteristics with four different silicon sensor manufacturers has been executed in order to determine the most suitable p-stop parameters for the harsh radiation environment during HL-LHC. Several p-stop doping concentrations, doping depths and different p-stop pattern have been realized and experiments before and after irradiation with protons and neutrons have been performed and compared to T-CAD simulation studies with Synopsys Sentaurus. The measurements combine the electrical characteristics measured with a semi-automatic probestation with Sr90 signal measurements and analogue readout. Furthermore, some samples have been investigated with the help of a cosmic telescope with high resolution allowing charge collection studies of MIPs penetrating the sensor between two strips.

  12. An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

    SciTech Connect

    Rein, M. H.; Holt, A. O.; Hohmann, M. V.; Klein, A.; Thogersen, A.; Mayandi, J.; Monakhov, E. V.

    2013-01-14

    The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.

  13. Effective lifetimes exceeding 300 μs in gettered p-type epitaxial kerfless silicon for photovoltaics

    NASA Astrophysics Data System (ADS)

    Powell, D. M.; Hofstetter, J.; Fenning, D. P.; Hao, R.; Ravi, T. S.; Buonassisi, T.

    2013-12-01

    We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low as (3.2 ± 2.2) × 109 cm-3) suggest that minority-carrier lifetime is not limited by dissolved iron. An increase in gettered lifetime from <20 to >300 μs is observed after increasing growth cleanliness. This improvement coincides with reductions in the concentration of Mo, V, Nb, and Cr impurities, but negligible change in the low area-fraction (<5%) of dislocated regions. Device simulations indicate that the high bulk lifetime of this material could support solar cell efficiencies >23%.

  14. Simultaneous iron gettering and passivation of p-type monocrystalline silicon using a negatively charged aluminum-doped dielectric

    NASA Astrophysics Data System (ADS)

    Das, Arnab; Rohatgi, Ajeet

    2012-12-01

    Rapid gettering of iron from p-type c-Si has been achieved using a negatively charged spin-on Al-doped glass. After a 10 min oxidation to cure the Al-doped glass, >99% of Fe can be gettered from silicon wafers. This is comparable to, and under some processing conditions better than, the efficiency of conventional POCl3 gettering. In the same short oxidation step, the Al-doped glass also passivates p-Si surfaces with surface recombination velocities of 100 cm/s and 10 600 cm/s achieved for surface doping of 6 × 1015 cm-3 and 4 × 1019 cm-3, respectively. These passivation results are comparable to those achieved with thermal SiO2 layers.

  15. Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon

    NASA Astrophysics Data System (ADS)

    Hilali, Mohamed; Ebong, Abasifreke; Rohatgi, Ajeet; Meier, Daniel L.

    2001-12-01

    This study shows that the bulk lifetime in 95 μm thick p-type dendritic web silicon solar cells is a strong function of bulk resistivity. The higher the resistivity, the greater the bulk lifetime. This behavior is explained on the basis of dopant-defect interaction, which increases the lifetime limiting trap concentration with the addition of dopant atoms. Model calculations show that in the absence of doping dependence of bulk lifetime ( τ), ˜2 Ω cm web should give the best cell efficiency for bulk lifetimes below 30 μs. However, strong doping dependence of bulk lifetime in p-web cells shifts the optimum resistivity from 2 to 15 Ω cm. Bulk lifetime in the as-grown web material was found to be less than 1 μs for all the resistivities. After the cell processing which involves phosphorus gettering, aluminum gettering, and SiN induced hydrogen passivation of defects, the bulk lifetime increased to 6.68, 11, 31 and 68.9 μs in 0.62, 1.37, 6.45 and 15 Ω cm p-type web material, respectively. Therefore, cell process induced recovery of lifetime in web is doping dependent, which favors high resistivity. Solar cells fabricated on 95 μm thick web silicon by a manufacturable process involving screen-printing and belt-line processing gave 14.5% efficient 4 cm 2 cells on 15 Ω cm resistivity. This represents a record efficiency for such a thin manufacturable screen-printed cell on a low-cost PV grade Si ribbon that requires no wafering or etching.

  16. Study of nanoparticles TiO2 thin films on p-type silicon substrate using different alcoholic solvents

    NASA Astrophysics Data System (ADS)

    Muaz, A. K. M.; Hashim, U.; Arshad, M. K. Md.; Ruslinda, A. R.; Ayub, R. M.; Gopinath, Subash C. B.; Voon, C. H.; Liu, Wei-Wen; Foo, K. L.

    2016-07-01

    In this paper, sol-gel method spin coating technique is adopted to prepare nanoparticles titanium dioxide (TiO2) thin films. The prepared TiO2 sol was synthesized using titanium butoxide act as a precursor and subjected to deposited on the p-type silicon oxide (p-SiO2) and glass slide substrates under room temperature. The effect of different alcoholic solvents of methanol and ethanol on the structural, morphological, optical and electrical properties were systematically investigated. The coated TiO2 thin films were annealed in furnace at 773 K for 1 h. The structural properties of the TiO2 films were examined with X-ray Diffraction (XRD). From the XRD analysis, both solvents showing good crystallinity with anatase phase were the predominant structure. Atomic Force Microscopy (AFM) was employed to study the morphological of the thin films. The optical properties were investigated by Ultraviolet-visible (UV-Vis) spectroscopy were found that ethanol as a solvent give a higher optical transmittance if compare to the methanol solvent. The electrical properties of the nanoparticles TiO2 thin films were measured using two-point-probe technique.

  17. Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

    NASA Astrophysics Data System (ADS)

    Möller, Christian; Bartel, Til; Gibaja, Fabien; Lauer, Kevin

    2014-07-01

    Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fei) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fei may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

  18. Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

    SciTech Connect

    Möller, Christian; Bartel, Til; Gibaja, Fabien; Lauer, Kevin

    2014-07-14

    Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fe{sub i}) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fe{sub i} may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

  19. Superparamagnetic iron oxide nanoparticle attachment on array of micro test tubes and microbeakers formed on p-type silicon substrate for biosensor applications

    NASA Astrophysics Data System (ADS)

    Ghoshal, Sarmishtha; Ansar, Abul Am; Raja, Sufi O.; Jana, Arpita; Bandyopadhyay, Nil R.; Dasgupta, Anjan K.; Ray, Mallar

    2011-10-01

    A uniformly distributed array of micro test tubes and microbeakers is formed on a p-type silicon substrate with tunable cross-section and distance of separation by anodic etching of the silicon wafer in N, N-dimethylformamide and hydrofluoric acid, which essentially leads to the formation of macroporous silicon templates. A reasonable control over the dimensions of the structures could be achieved by tailoring the formation parameters, primarily the wafer resistivity. For a micro test tube, the cross-section (i.e., the pore size) as well as the distance of separation between two adjacent test tubes (i.e., inter-pore distance) is typically approximately 1 μm, whereas, for a microbeaker the pore size exceeds 1.5 μm and the inter-pore distance could be less than 100 nm. We successfully synthesized superparamagnetic iron oxide nanoparticles (SPIONs), with average particle size approximately 20 nm and attached them on the porous silicon chip surface as well as on the pore walls. Such SPION-coated arrays of micro test tubes and microbeakers are potential candidates for biosensors because of the biocompatibility of both silicon and SPIONs. As acquisition of data via microarray is an essential attribute of high throughput bio-sensing, the proposed nanostructured array may be a promising step in this direction.

  20. Inorganic Nano Light-Emitting Transistor: p-Type Porous Silicon Nanowire/n-Type ZnO Nanofilm.

    PubMed

    Lee, Sang Hoon; Kim, Jong Woo; Lee, Tae Il; Myoung, Jae Min

    2016-08-01

    An inorganic nano light-emitting transistor (INLET) consisting of p-type porous Si nanowires (PoSiNWs) and an n-type ZnO nanofilm was integrated on a heavily doped p-type Si substrate with a thermally grown SiO2 layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I-V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V g ). As the V g is changed from 0 V to -20 V, the current level and light-emission intensity in the orange-red range increase by three and two times, respectively, with a forward bias of 20 V in the p-n junction, compared to those at a V g of 0 V. On the other hand, as the V g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built-in potential at the p-n junction by the applied gate electric field. PMID:27378257

  1. Inorganic Nano Light-Emitting Transistor: p-Type Porous Silicon Nanowire/n-Type ZnO Nanofilm.

    PubMed

    Lee, Sang Hoon; Kim, Jong Woo; Lee, Tae Il; Myoung, Jae Min

    2016-08-01

    An inorganic nano light-emitting transistor (INLET) consisting of p-type porous Si nanowires (PoSiNWs) and an n-type ZnO nanofilm was integrated on a heavily doped p-type Si substrate with a thermally grown SiO2 layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I-V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V g ). As the V g is changed from 0 V to -20 V, the current level and light-emission intensity in the orange-red range increase by three and two times, respectively, with a forward bias of 20 V in the p-n junction, compared to those at a V g of 0 V. On the other hand, as the V g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built-in potential at the p-n junction by the applied gate electric field.

  2. Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    NASA Astrophysics Data System (ADS)

    Calderini, G.; Bagolini, A.; Beccherle, R.; Bomben, M.; Boscardin, M.; Bosisio, L.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchiori, G.; Zorzi, N.

    2016-09-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.

  3. Role of the buffer at the interface of intrinsic a-Si:H and p-type a-Si:H on amorphous/crystalline silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Meng, Fanying; Shen, Leilei; Shi, Jianhua; Zhang, Liping; Liu, Jinning; Liu, Yucheng; Liu, Zhengxin

    2015-11-01

    We investigate the influence of the different buffer at the interface between the intrinsic a-Si:H and p-type a-Si:H layers on amorphous/crystalline silicon heterojunction (SHJ) solar cells performance. It is demonstrated that the ultrathin buffer at interface of intrinsic a-Si:H and p-type a-Si:H, obtained by H-rich plasma treatment on the initial intrinsic a-Si:H passivation layer, can significantly enhance the minority carrier lifetime and decrease the emitter saturation current density. Spectroscopic ellipsometry and Fourier transform infrared spectroscopy analyses indicate that the initial intrinsic a-Si:H films become dense and less defected as a result of the relaxation and reconstruction when they are treated during the H-rich plasma environment. Based on this finding combined with the optimization of surface texturization of the silicon wafer, this work allows us to reach very high Voc values over 730 mV without losses on fill factor, the 100 μm, 125 × 125 mm2 SHJ solar cells were fabricated with industry-compatible process, yielding the efficiency up to 22.5%.

  4. Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel

    NASA Astrophysics Data System (ADS)

    Yu, Eunseon; Cho, Seongjae

    2016-11-01

    In this work, a nanowire p-type metal–oxide–semiconductor field-effect transistor (PMOSFET) coaxially having a Si core and a Ge peripheral channel is designed and characterized by device simulations. Owing to the high hole mobility of Ge, the device can be utilized for high-speed CMOS integrated circuits, with the effective confinement of mobile holes in Ge by the large valence band offset between Si and Ge. Source/drain doping concentrations and the ratio between the Si core and Ge channel thicknesses are determined. On the basis of the design results, the channel length is aggressively scaled down by evaluating the primary DC parameters in order to confirm device scalability and low-power applicability in sub-10-nm technology nodes.

  5. Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

    SciTech Connect

    Goto, Masaki; Amano, Ryo; Shimoda, Naotaka; Kato, Yoshimine; Teii, Kungen

    2014-04-14

    Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

  6. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    SciTech Connect

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

    2015-04-24

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  7. Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays

    NASA Astrophysics Data System (ADS)

    Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

    2014-10-01

    Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly

  8. Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

    SciTech Connect

    Liu, Yanhong; Li, La; Wang, Song; Gao, Ping; Pan, Lujun; Zhang, Jialiang; Zhou, Peng; Li, Jinhua; Weng, Zhankun

    2015-02-09

    In this paper, we discuss a model of sub-band in resistive switching nonvolatile memories with a structure of silver/aluminum oxide/p-type silicon (Ag/Al{sub x}O{sub y}/p-Si), in which the sub-band is formed by overlapping of wave functions of electron-occupied oxygen vacancies in Al{sub x}O{sub y} layer deposited by atomic layer deposition technology. The switching processes exhibit the characteristics of the bipolarity, discreteness, and no need of forming process, all of which are discussed deeply based on the model of sub-band. The relationships between the SET voltages and distribution of trap levels are analyzed qualitatively. The semiconductor-like behaviors of ON-state resistance affirm the sub-band transport mechanism instead of the metal filament mechanism.

  9. Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays.

    PubMed

    Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

    2014-11-01

    Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.

  10. Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

    NASA Astrophysics Data System (ADS)

    Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

    2016-04-01

    Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

  11. Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

    NASA Astrophysics Data System (ADS)

    Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

    2016-11-01

    The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

  12. Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

    NASA Astrophysics Data System (ADS)

    Brouzet, V.; Salem, B.; Periwal, P.; Rosaz, G.; Baron, T.; Bassani, F.; Gentile, P.; Ghibaudo, G.

    2015-11-01

    In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about 7 \\upmu {m} with 3 \\upmu {m} of doped regions (p-type and n-type) and 1 \\upmu {m} of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide ({HfO}2), 80 nm of nickel and 120 nm of aluminium. At room temperature, I_{{on}} =-52 {nA}/\\upmu {m} (V_{{DS}}=-0.5 {V}, V_{{GS}}=-4 {V}), and an I_{{on}}/I_{{off}} ratio of about 104 with a very low I_{{off}} current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I on current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

  13. Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

    NASA Astrophysics Data System (ADS)

    Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

    2016-07-01

    The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime (τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

  14. Silicon mitigates heavy metal stress by regulating P-type heavy metal ATPases, Oryza sativa low silicon genes, and endogenous phytohormones

    PubMed Central

    2014-01-01

    Background Silicon (Si) application has been known to enhance the tolerance of plants against abiotic stresses. However, the protective mechanism of Si under heavy metals contamination is poorly understood. The aim of this study was to assess the role of Si in counteracting toxicity due to cadmium (Cd) and copper (Cu) in rice plants (Oryza sativa). Results Si significantly improved the growth and biomass of rice plants and reduced the toxic effects of Cd/Cu after different stress periods. Si treatment ameliorated root function and structure compared with non-treated rice plants, which suffered severe root damage. In the presence of Si, the Cd/Cu concentration was significantly lower in rice plants, and there was also a reduction in lipid peroxidation and fatty acid desaturation in plant tissues. The reduced uptake of metals in the roots modulated the signaling of phytohormones involved in responses to stress and host defense, such as abscisic acid, jasmonic acid, and salicylic acid. Furthermore, the low concentration of metals significantly down regulated the mRNA expression of enzymes encoding heavy metal transporters (OsHMA2 and OsHMA3) in Si-metal-treated rice plants. Genes responsible for Si transport (OsLSi1 and OsLSi2), showed a significant up-regulation of mRNA expression with Si treatment in rice plants. Conclusion The present study supports the active role of Si in the regulation of stresses from heavy metal exposure through changes in root morphology. PMID:24405887

  15. Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy

    NASA Astrophysics Data System (ADS)

    Inglese, Alessandro; Lindroos, Jeanette; Vahlman, Henri; Savin, Hele

    2016-09-01

    The presence of copper contamination is known to cause strong light-induced degradation (Cu-LID) in silicon. In this paper, we parametrize the recombination activity of light-activated copper defects in terms of Shockley—Read—Hall recombination statistics through injection- and temperature dependent lifetime spectroscopy (TDLS) performed on deliberately contaminated float zone silicon wafers. We obtain an accurate fit of the experimental data via two non-interacting energy levels, i.e., a deep recombination center featuring an energy level at Ec-Et=0.48 -0.62 eV with a moderate donor-like capture asymmetry ( k =1.7 -2.6 ) and an additional shallow energy state located at Ec-Et=0.1 -0.2 eV , which mostly affects the carrier lifetime only at high-injection conditions. Besides confirming these defect parameters, TDLS measurements also indicate a power-law temperature dependence of the capture cross sections associated with the deep energy state. Eventually, we compare these results with the available literature data, and we find that the formation of copper precipitates is the probable root cause behind Cu-LID.

  16. Infrared Reflectance and Ultrahigh Vacuum Cathodoluminescence of Aluminum Nitride-Gallium Nitride Short Period Superlattice Films and P-Type Porous 6h Silicon Carbide Layers

    NASA Astrophysics Data System (ADS)

    MacMillan, Michael F.

    The room temperature infrared reflectance of AlN -GaN short period superlattice films was measured. These superlattice films were deposited by switched atomic layer metal organic chemical vapor deposition onto GaN or AlN buffer layers deposited on basal plane sapphire substrates. The measured reflectance spectra are compared to calculated spectra generated using an effective medium theory to model the dielectric function of the superlattice. Optical properties of the individual materials comprising the samples are modeled with Lorentz oscillators using bulk input parameters. The effects of film and substrate anisotropy and off normal incidence are included in the calculation. Using this modeling technique, thickness estimates for the total superlattice film and the buffer layer are obtained. Cathodoluminescence of AlN-GaN short period superlattice films was measured at 6K, 77K and room temperature, and at several electron acceleration voltages to allow depth profiling of the samples. An ultraviolet peak located above the band gap energy of GaN is present in all samples and persists from 6K to room temperature. Using the film and buffer thicknesses determined by the reflectance measurement this ultraviolet peak is identified as originating from the superlattice layer. Preliminary results indicate that this peak is due to quantum confinement in the GaN layers. The room temperature infrared reflectance of thick p-type porous 6H SiC layers was measured. Samples were fabricated by anodization of p-type 6H SiC bulk crystals in dilute HF. Striking differences are seen between the reststrahl region reflectance of these porous layers and that of bulk 6H SiC crystals. Several effective medium models, which assume different morphologies of the component materials, 6H SiC and air, were used to model the dielectric function of porous SiC. Calculated reflectance spectra, generated using these dielectric functions, are compared to experimental porous SiC spectra, allowing us to

  17. In situ study of p-type amorphous silicon growth from B2H6:SiH4 mixtures: Surface reactivity and interface effects

    NASA Astrophysics Data System (ADS)

    Collins, R. W.

    1988-09-01

    In situ ellipsometry provides monolayer sensitivity to the reaction of B2H6:SiH4 doping gas mixtures with p- and i-type plasma-enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) surfaces at 180 and 250 °C. This low-temperature reaction, leading to the slow growth (1-3 Å/min) of a-Si:H:B by CVD (without plasma excitation), requires a clean a-Si:H surface and both B2H6 and SiH4 in the doping gas. We suggest that the high B content of CVD a-Si:H:B at p-i and i-p interfaces and on the film-coated regions of single-chamber reactors, may contribute to poor interface characteristics and residual contamination in devices.

  18. Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon

    SciTech Connect

    Rangel-Kuoppa, Victor-Tapio; Chen Gang; Jantsch, Wolfgang

    2011-12-23

    Temperature dependent Capacitance-Voltage (TCV) and Deep Level Transient Spectroscopy (DLTS) techniques were used to study how Ge Quantum Dots (QDs) embedded in Silicon trap charge. Atomic Force Microscopy (AFM) is used to obtain the density of QDs, which is in the order of 3x10{sup 11} cm{sup -2}. Three shallow levels, with activation energies of 40, 65 and 90 meV, and densities around 10{sup 16} cm{sup -3}, are found and are related to Boron. Four deep levels, with activation energies of 110, 150, 330 and 380 meV, and densities between 2x10{sup 15} cm{sup -3} and 5x10{sup 15} cm{sup -3}, are also found. TCV results suggest they are related to the Ge QDs.

  19. Initial experience with the CDF layer 00 silicon detector

    SciTech Connect

    C. Hill

    2003-03-17

    We report on initial experience with the CDF Layer 00 Detector. Layer 00 is an innovative, low-mass, silicon detector installed in CDF during the upgrade for Run 2A of the Tevatron. Noise pickup present during operation at CDF is discussed. An event-by-event pedestal correction implemented by CDF is presented. This off-line solution prevents L00 from being used in the current incarnation of the on-line displaced track trigger. Preliminary performance of Layer 00 is described.

  20. Crystalline Silicon Short-Circuit Current Degradation Study: Initial Results

    SciTech Connect

    Osterwald, C. R.; Pruett, J.; Moriarty, T.

    2005-02-01

    Following our observation of slow degradation of short-circuit current (Isc) in crystalline silicon (x-Si) modules that was correlated with ultraviolet (UV) exposure dose, we initiated a new study of individual x-Si cells designed to determine the degradation cause. In this paper, we report the initial results of this study, which has accumulated 1056 MJ/m2 of UV dose from 1-sun metal-halide irradiance, equivalent to 3.8 years at our test site. At this time, the control samples are unchanged, the unencapsulated samples have lost about 2% of Isc, and the samples encapsulated in module-style packages have declined from 1% to 3%, depending on the cell technology.

  1. Comparative study of initial stages of copper immersion deposition on bulk and porous silicon

    NASA Astrophysics Data System (ADS)

    Bandarenka, Hanna; Prischepa, Sergey L.; Fittipaldi, Rosalba; Vecchione, Antonio; Nenzi, Paolo; Balucani, Marco; Bondarenko, Vitaly

    2013-02-01

    Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu2O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, density, and oxidation level of Cu nanoparticles deposited on bulk silicon.

  2. Comparative study of initial stages of copper immersion deposition on bulk and porous silicon

    PubMed Central

    2013-01-01

    Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu2O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, density, and oxidation level of Cu nanoparticles deposited on bulk silicon. PMID:23414073

  3. Comparative study of initial stages of copper immersion deposition on bulk and porous silicon.

    PubMed

    Bandarenka, Hanna; Prischepa, Sergey L; Fittipaldi, Rosalba; Vecchione, Antonio; Nenzi, Paolo; Balucani, Marco; Bondarenko, Vitaly

    2013-01-01

    Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu2O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, density, and oxidation level of Cu nanoparticles deposited on bulk silicon.

  4. P-type gallium nitride

    DOEpatents

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  5. P-type gallium nitride

    DOEpatents

    Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  6. Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

    2016-07-01

    The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline silicon wafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450 °C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450 °C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltage of over 710 mV and an efficiency of over 19%.

  7. Initiation time of near-infrared laser-induced slip on the surface of silicon wafers

    SciTech Connect

    Choi, Sungho; Jhang, Kyung-Young

    2014-06-23

    We have determined the initiation time of laser-induced slip on a silicon wafer surface subjected to a near-infrared continuous-wave laser by numerical simulations and experiments. First, numerical analysis was performed based on the heat transfer and thermoelasticity model to calculate the resolved shear stress and the temperature-dependent yield stress. Slip initiation time was predicted by finding the time at which the resolved shear stress reached the yield stress. Experimentally, the slip initiation time was measured by using a laser scattering technique that collects scattered light from the silicon wafer surface and detects strong scattering when the surface slip is initiated. The surface morphology of the silicon wafer surface after laser irradiation was also observed using an optical microscope to confirm the occurrence of slip. The measured slip initiation times agreed well with the numerical predictions.

  8. Optical initiation of nanoporous energetic silicon for safing and arming technologies

    NASA Astrophysics Data System (ADS)

    Churaman, Wayne A.; Becker, Collin R.; Metcalfe, Grace D.; Hanrahan, Brendan M.; Currano, Luke J.; Stoldt, Conrad R.

    2010-08-01

    Nanoporous silicon, commonly recognized for its photoluminescent properties, has gained attention as a new energetic material capable of energy density more than twice that of TNT. The addition of an oxidizer solution to inert nanoporous silicon results in an exothermic reaction when heat, friction, or focused light is supplied to the system. The energetic material can be integrated alongside microelectronics and micro-electro-mechanical systems (MEMS) for on-chip applications. This integration capability, along with the potential for large energetic yield, makes nanoporous energetic silicon a viable material for developing novel MEMS Safing and Arming (S&A) technologies. While ignition of nanoporous energetic silicon has been demonstrated for the purpose of propagation velocity measurements using a YAG laser, in this paper we show optical ignition for potential integration of the energetic with a miniaturized S&A device. Ignition is demonstrated using a 514nm laser at 37.7mW and a power density of 2.7kW/cm2 at a stand-off distance of 23cm. Raman spectroscopy verifies that significant stress in porous silicon is produced by a laser operating near the power density observed to ignite porous silicon. Lastly, we integrate the nanoporous energetic silicon with a MEMS S&A, and demonstrate transfer to a firetrain consisting of one primary and one secondary explosive using a thermal initiator to ignite the nanoporous energetic silicon.

  9. 3-D patterning of silicon by laser-initiated, liquid-assisted colloidal (LILAC) lithography.

    PubMed

    Ulmeanu, M; Grubb, M P; Jipa, F; Quignon, B; Ashfold, M N R

    2015-06-01

    We report a comprehensive study of laser-initiated, liquid-assisted colloidal (LILAC) lithography, and illustrate its utility in patterning silicon substrates. The method combines single shot laser irradiation (frequency doubled Ti-sapphire laser, 50fs pulse duration, 400nm wavelength) and medium-tuned optical near-field effects around arrays of silica colloidal particles to achieve 3-D surface patterning of silicon. A monolayer (or multilayers) of hexagonal close packed silica colloidal particles act as a mask and offer a route to liquid-tuned optical near field enhancement effects. The resulting patterns are shown to depend on the difference in refractive index of the colloidal particles (ncolloid) and the liquid (nliquid) in which they are immersed. Two different topographies are demonstrated experimentally: (a) arrays of bumps, centred beneath the original colloidal particles, when using liquids with nliquidncolloid - and explained with the aid of complementary Mie scattering simulations. The LILAC lithography technique has potential for rapid, large area, organized 3-D patterning of silicon (and related) substrates.

  10. Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

    NASA Technical Reports Server (NTRS)

    Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

    2007-01-01

    Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

  11. Single electron transistor with P-type sidewall spacer gates.

    PubMed

    Lee, Jung Han; Li, Dong Hua; Lee, Joung-Eob; Kang, Kwon-Chil; Kim, Kyungwan; Park, Byung-Gook

    2011-07-01

    A single-electron transistor (SET) is one of the promising solutions to overcome the scaling limit of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Up to now, various kinds of SETs are being proposed and SETs with a dual gate (DG) structure using an electrical potential barrier have been demonstrated for room temperature operation. To operate DG-SETs, however, extra bias of side gates is necessary. It causes new problems that the electrode for side gates and the extra bias for electrical barrier increase the complexity in circuit design and operation power consumption, respectively. For the reason, a new mechanism using work function (WF) difference is applied to operate a SET at room temperature by three electrodes. Its structure consists of an undoped active region, a control gate, n-doped source/drain electrodes, and metal/silicide or p-type silicon side gates, and a SET with metal/silicide gates or p-type silicon gates forms tunnel barriers induced by work function between an undoped channel and grounded side gates. Via simulation, the effectiveness of the new mechanism is confirmed through various silicide materials that have different WF values. Furthermore, by considering the realistic conditions of the fabrication process, SET with p-type sidewall spacer gates was designed, and its brief fabrication process was introduced. The characteristics of its electrical barrier and the controllability of its control gate were also confirmed via simulation. Finally, a single-hole transistor with n-type sidewall spacer gates was designed. PMID:22121580

  12. p-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Sheng, Su; Fang, Guojia; Li, Chun; Xu, Sheng; Zhao, Xingzhong

    2006-06-01

    The recent advance of p-type transparent conductive oxide thin films is reviewed. The focus is on p-type transparent oxide semiconductors CuAlO2, CuGaO2, CuInO2, SrCu2O2, and LaCuOCh (Ch = chalcogen). These materials and related device applications are then shown as examples. Room temperature operation of current injection emission from ultraviolet light-emitting diodes based on p-SCO/n-ZnO p-n junctions has been demonstrated. This changed with the discovery of p-type transparent conducting oxides, thereby opening up the possibility for all-oxide transparent electronics.

  13. p-type metal-base transistor

    NASA Astrophysics Data System (ADS)

    Delatorre, R. G.; Munford, M. L.; Zandonay, R.; Zoldan, V. C.; Pasa, A. A.; Schwarzacher, W.; Meruvia, M. S.; Hümmelgen, I. A.

    2006-06-01

    In this work we present data from a novel p-type metal-base transistor with common-base gain α ˜1, fabricated at ambient temperature and pressure by electrodepositing sequentially on a p-type Si collector, a Co base and a Cu2O emitter. The high gain and the dependence of potential between emitter and base (VEB) on the potential between collector and base (VCB) when the emitter current (IE) is held constant both suggest that the device functions as a natural permeable base transistor for very thin metal bases.

  14. P-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Stauber, Renaud Emmanuel

    2003-10-01

    Transparent conductors have important energy and general technology applications as transparent front contacts to photovoltaic cells, electrochromic windows and flat panel displays. Conventional transparent conductors such as SnO 2 are n-type (electron) conductors. As yet, there are no comparable, p-type (hole) analogues. However, researchers have recently reported that CuAlO2, N:ZnO and SrCu2O2 films (among others) may be viable p-type transparent conductors, albeit with carrier concentrations three orders of magnitude lower than n-type SnO2. If these materials could be more effectively hole-doped, they would enhance existing technologies and enable new photovoltaic designs through improved transparent contacts to p-type materials and as possible heterojunction partners. This thesis describes our program for growing and evaluating CuAlO2, ZnO and SrCu 2O2 thin films for use as p-type transparent conductors. Our work on CuAlO2 focused on the optimization of crystal growth and transport properties by pulsed laser deposition (PLD) and sputtering. The films with the best surface morphology and phase-purity were formed by annealing precursors that had been sputtered at room temperature at 940°C in 10T of O2. The phase-purity and transparency of these films is higher than any reported in the literature, and we provided the first experimental confirmation of Kawazoe's work on CuAlO2 [1] as a potential p-type conductor. We also attempted to make transparent electrically conductive p-type ZnO by PLD and sputtering using N2, N2O, NO, and NH 3 gases. Expanding on the work of Kawai and coworkers [2,3], we used an ion source, rather than an ECR source in the PLD chamber to dissociate N2O gas, and explored the use of aluminum in addition to gallium as potential co-dopants. The most promising results have been obtained with DC reactive sputtering of un-doped zinc metal targets in NO or NH3. A three to six order of magnitude reduction in n-type conductivity occurred when 2% of

  15. Neutron-irradiation creep of silicon carbide materials beyond the initial transient

    NASA Astrophysics Data System (ADS)

    Koyanagi, Takaaki; Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; Hinoki, Tatsuya; Snead, Lance L.

    2016-09-01

    Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. The materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber-reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ∼1 GPa for the fibers and ∼300 MPa for the other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ∼1 × 10-7 [dpa-1 MPa-1] at 430-750 °C for the range of 1-30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures-such as grain boundary, crystal orientation, and secondary phases-increase with increasing irradiation temperature.

  16. Neutron-irradiation creep of silicon carbide materials beyond the initial transient

    DOE PAGESBeta

    Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; Hinoki, Tatsuya; Snead, Lance Lewis; Koyanagi, Takaaki

    2016-06-04

    Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. Here, the materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber–reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ~1 GPa for the fibers and ~300 MPa for themore » other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ~1 × 10–7 [dpa–1 MPa–1] at 430–750 °C for the range of 1–30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures—such as grain boundary, crystal orientation, and secondary phases—increase with increasing irradiation temperature.« less

  17. Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results

    NASA Astrophysics Data System (ADS)

    Unno, Y.; Edwards, S. O.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Lynn, D.; Carter, J. R.; Hommels, L. B. A.; Robinson, D.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.; Ferrere, D.; Gonzalez Sevilla, S.; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; Eklund, L.; McMullen, T.; McEwan, F.; O`Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Nishimura, R.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Allport, P. P.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandic, I.; Mikuz, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Arai, Y.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Mikestikova, M.; Bevan, A.; Beck, G.; Ely, S.; Fadeyev, V.; Galloway, Z.; Grillo, A. A.; Martinez-McKinney, F.; Ngo, J.; Parker, C.; Sadrozinski, H. F.-W.; Schumacher, D.; Seiden, A.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Paganis, S.; Jinnouchi, O.; Motohashi, K.; Todome, K.; Yamaguchi, D.; Hara, K.; Hagihara, M.; Garcia, C.; Jimenez, J.; Lacasta, C.; Marti i Garcia, S.; Soldevila, U.

    2014-11-01

    We have been developing a novel radiation-tolerant n+-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.

  18. Three-point bending analysis of doubly clamped silicon nanowire beams; Young's modulus, initial stress, and crystal orientation

    SciTech Connect

    Yaish, Y. E. Calahorra, Y.; Shtempluck, O.; Kotchetkov, V.

    2015-04-28

    A non-linear model is introduced describing the force-deflection relation of doubly clamped beams, including initial stress. Several approximations for the exact model are developed and compared, revealing the importance of considering the initial stress during 3-point bending measurements analysis. A novel approximation is found to be better than others, and both the exact model and this approximation are in perfect agreement with finite element simulations. A brief experimental example of silicon nanowires is presented in which the Young's modulus, the initial stress, and the crystallographic growth orientation are extracted by 3-point bending analysis.

  19. P-type transparent conducting oxides.

    PubMed

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-09-28

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of 'chemical modulation of the valence band' to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d (10) orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu(+)-based delafossites, layered oxychalcogenides, nd (6) spinel oxides, Cr(3+)-based oxides (3d (3)) and post-transition metal oxides with lone pair state (ns (2)). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed.

  20. P-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Zhang, Kelvin H. L.; Xi, Kai; Blamire, Mark G.; Egdell, Russell G.

    2016-09-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d 10 orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu+-based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr3+-based oxides (3d 3) and post-transition metal oxides with lone pair state (ns 2). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed.

  1. P-type transparent conducting oxides.

    PubMed

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-09-28

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of 'chemical modulation of the valence band' to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d (10) orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu(+)-based delafossites, layered oxychalcogenides, nd (6) spinel oxides, Cr(3+)-based oxides (3d (3)) and post-transition metal oxides with lone pair state (ns (2)). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed. PMID:27459942

  2. P-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Zhang, Kelvin H. L.; Xi, Kai; Blamire, Mark G.; Egdell, Russell G.

    2016-09-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d 10 orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu+-based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr3+-based oxides (3d 3) and post-transition metal oxides with lone pair state (ns 2). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p–n junctions will also be briefly discussed.

  3. Preparation of High Silicon Electrical Steel Sheets with Strong {100} Recrystallization Texture by the Texture Inheritance of Initial Columnar Grains

    NASA Astrophysics Data System (ADS)

    Pan, Hongjiang; Zhang, Zhihao; Xie, Jianxin

    2016-05-01

    Texture evolutions and recrystallization texture features in warm- and cold-rolled sheets of high silicon electrical steel with two different initial microstructures (columnar-grained and equiaxed-grained microstructures) were investigated. The relationships between the recrystallization textures and the initial textures (the textures before rolling) of the samples were analyzed. The results showed that after annealing at 1073 K (800 °C) for 1 hour, strong {100} recrystallization textures with volume fractions of more than 47 pct were obtained in the columnar-grained samples fabricated by warm and cold rolling along the growing direction of the columnar grains. While after rolling and annealing in the same processes, only 12.8 pct volume fractions of {100} recrystallization texture were revealed in the equiaxed-grained samples. The formation of strong {100} recrystallization texture in the annealed sheets of high silicon electrical steel with initial columnar grains was attributed to the favorable texture inheritance of the initial texture during rolling and annealing. The columnar grains of strong near {100}<001> ({100}<001> {310}<001>) orientation in the samples before rolling were transferred into deformed grains with orientations such as {100}<011> and {100}<012>. after rolling. Afterwards, these deformed grains were further transferred into {100} oriented recrystallized grains, which formed strong {100} recrystallization texture in the annealed sheets and exhibited preferable soft magnetic properties.

  4. Initial stem cell adhesion on porous silicon surface: molecular architecture of actin cytoskeleton and filopodial growth

    NASA Astrophysics Data System (ADS)

    Collart-Dutilleul, Pierre-Yves; Panayotov, Ivan; Secret, Emilie; Cunin, Frédérique; Gergely, Csilla; Cuisinier, Frédéric; Martin, Marta

    2014-10-01

    The way cells explore their surrounding extracellular matrix (ECM) during development and migration is mediated by lamellipodia at their leading edge, acting as an actual motor pulling the cell forward. Lamellipodia are the primary area within the cell of actin microfilaments (filopodia) formation. In this work, we report on the use of porous silicon (pSi) scaffolds to mimic the ECM of mesenchymal stem cells from the dental pulp (DPSC) and breast cancer (MCF-7) cells. Our atomic force microscopy (AFM), fluorescence microscopy, and scanning electron microscopy (SEM) results show that pSi promoted the appearance of lateral filopodia protruding from the DPSC cell body and not only in the lamellipodia area. The formation of elongated lateral actin filaments suggests that pores provided the necessary anchorage points for protrusion growth. Although MCF-7 cells displayed a lower presence of organized actin network on both pSi and nonporous silicon, pSi stimulated the formation of extended cell protrusions.

  5. Cell adhesion response on femtosecond laser initiated liquid assisted silicon surface.

    PubMed

    Ulmeanu, M; Sima, L E; Ursescu, D; Enculescu, M; Bazan, X; Quintana, I

    2014-03-01

    Silicon substrates were irradiated at normal incidence with a femtosecond Ti:sapphire laser (Quatronix, 90 fs pulse duration, 1 kHz repetition rate, M(2) ~ 1.2, maximum energy peak 350 mJ ) operating at a wavelength of 400 nm and focused via a microscope objective (Newport; UV Objective Model, 37x 0.11 N.A.). The laser scanning was assisted by liquids precursors media such as methanol and 1,1,2-trichlorotrifluoroethane. By altering the processing parameters, such as incident laser energy, scanning speed, and different irradiation media, various surface structures were produced on areas with 1 mm(2) dimensions. We analyzed the dependence of the surface morphology on laser pulse energy, scanning speed and irradiation media. Well ordered areas are developed without imposing any boundary conditions for the capillary waves that coarsens the ripple pattern. To assess biomaterial-driven cell adhesion response we investigated actin filaments organization and cell morphological changes following growth onto processed silicon substrates. Our study of bone cell progenitor interaction with laser nanoprocessed silicon lines has shown that cells anchor mainly to contact points along the nanostructured surface. Consequently, actin filaments are stretched towards the 15 µm wide parallel lines increasing lateral cell spreading and changing the bipolar shape of mesenchymal stem cells. PMID:24444164

  6. Cell adhesion response on femtosecond laser initiated liquid assisted silicon surface.

    PubMed

    Ulmeanu, M; Sima, L E; Ursescu, D; Enculescu, M; Bazan, X; Quintana, I

    2014-03-01

    Silicon substrates were irradiated at normal incidence with a femtosecond Ti:sapphire laser (Quatronix, 90 fs pulse duration, 1 kHz repetition rate, M(2) ~ 1.2, maximum energy peak 350 mJ ) operating at a wavelength of 400 nm and focused via a microscope objective (Newport; UV Objective Model, 37x 0.11 N.A.). The laser scanning was assisted by liquids precursors media such as methanol and 1,1,2-trichlorotrifluoroethane. By altering the processing parameters, such as incident laser energy, scanning speed, and different irradiation media, various surface structures were produced on areas with 1 mm(2) dimensions. We analyzed the dependence of the surface morphology on laser pulse energy, scanning speed and irradiation media. Well ordered areas are developed without imposing any boundary conditions for the capillary waves that coarsens the ripple pattern. To assess biomaterial-driven cell adhesion response we investigated actin filaments organization and cell morphological changes following growth onto processed silicon substrates. Our study of bone cell progenitor interaction with laser nanoprocessed silicon lines has shown that cells anchor mainly to contact points along the nanostructured surface. Consequently, actin filaments are stretched towards the 15 µm wide parallel lines increasing lateral cell spreading and changing the bipolar shape of mesenchymal stem cells.

  7. Computational Study of Field Initiated Surface Reactions for Synthesis of Diamond and Silicon

    NASA Technical Reports Server (NTRS)

    Musgrave, Charles Bruce

    1999-01-01

    This project involves using quantum chemistry to simulate surface chemical reactions in the presence of an electric field for nanofabrication of diamond and silicon. A field delivered by a scanning tunneling microscope (STM) to a nanometer scale region of a surface affects chemical reaction potential energy surfaces (PES) to direct atomic scale surface modification to fabricate sub-nanometer structures. Our original hypothesis is that the applied voltage polarizes the charge distribution of the valence electrons and that these distorted molecular orbitals can be manipulated with the STM so as to change the relative stabilities of the electronic configurations over the reaction coordinates and thus the topology of the PES and reaction kinetics. Our objective is to investigate the effect of applied bias on surface reactions and the extent to which STM delivered fields can be used to direct surface chemical reactions on an atomic scale on diamond and silicon. To analyze the fundamentals of field induced chemistry and to investigate the application of this technique for the fabrication of nanostructures, we have employed methods capable of accurately describing molecular electronic structure. The methods we employ are density functional theory (DFT) quantum chemical (QC) methods. To determine the effect of applied bias on surface reactions we have calculated the QC PESs in various applied external fields for various reaction steps for depositing or etching diamond and silicon. We have chosen reactions which are thought to play a role in etching and the chemical vapor deposition growth of Si and diamond. The PESs of the elementary reaction steps involved are then calculated under the applied fields, which we vary in magnitude and configuration. We pay special attention to the change in the reaction barriers, and transition state locations, and search for low energy reaction channels which were inaccessible without the applied bias.

  8. Ensemble Monte Carlo calculation of the hole initiated impact ionization rate in bulk GaAs and silicon using a k-dependent, numerical transition rate formulation

    NASA Technical Reports Server (NTRS)

    Oguzman, Ismail H.; Wang, Yang; Kolnik, Jan; Brennan, Kevin F.

    1995-01-01

    The hole initiated impact ionization rate in bulk silicon and GaAs is calculated using a numerical formulation of the impact ionization transition rate incorporated into an ensemble Monte Carlo simulation. The transition rate is calculated from Fermi's golden rule using a two-body screened Coulomb interaction including a wavevector dependent dielectric function. It is found that the effective threshold for hole initiated ionization is relatively soft in both materials, that the split-off band dominates the ionization process in GaAs. and that no clear dominance by any one band is observed in silicon, though the rate out of the light hole band is greatest.

  9. An integrated driving circuit implemented with p-type LTPS TFTs for AMOLED

    NASA Astrophysics Data System (ADS)

    Zhao, Li-Qing; Wu, Chun-Ya; Hao, Da-Shou; Yao, Ying; Meng, Zhi-Guo; Xiong, Shao-Zhen

    2009-03-01

    Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with novel p-type TFTs is proposed to realize the gate driver. A flip-latch cooperated with the shift register is designed to conduct the data writing. In order to verify the validity of the proposed design, the circuits are simulated with SILVACO TCAD tools, using the MODEL in which the parameters of LTPS TFTs were extracted from the LTPS TFTs made in our lab. The simulation results indicate that the circuit can fulfill the driving function.

  10. Angular sensitivity of modeled scientific silicon charge-coupled devices to initial electron direction

    NASA Astrophysics Data System (ADS)

    Plimley, Brian; Coffer, Amy; Zhang, Yigong; Vetter, Kai

    2016-08-01

    Previously, scientific silicon charge-coupled devices (CCDs) with 10.5-μm pixel pitch and a thick (650 μm), fully depleted bulk have been used to measure gamma-ray-induced fast electrons and demonstrate electron track Compton imaging. A model of the response of this CCD was also developed and benchmarked to experiment using Monte Carlo electron tracks. We now examine the trade-off in pixel pitch and electronic noise. We extend our CCD response model to different pixel pitch and readout noise per pixel, including pixel pitch of 2.5 μm, 5 μm, 10.5 μm, 20 μm, and 40 μm, and readout noise from 0 eV/pixel to 2 keV/pixel for 10.5 μm pixel pitch. The CCD images generated by this model using simulated electron tracks are processed by our trajectory reconstruction algorithm. The performance of the reconstruction algorithm defines the expected angular sensitivity as a function of electron energy, CCD pixel pitch, and readout noise per pixel. Results show that our existing pixel pitch of 10.5 μm is near optimal for our approach, because smaller pixels add little new information but are subject to greater statistical noise. In addition, we measured the readout noise per pixel for two different device temperatures in order to estimate the effect of temperature on the reconstruction algorithm performance, although the readout is not optimized for higher temperatures. The noise in our device at 240 K increases the FWHM of angular measurement error by no more than a factor of 2, from 26° to 49° FWHM for electrons between 425 keV and 480 keV. Therefore, a CCD could be used for electron-track-based imaging in a Peltier-cooled device.

  11. Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

    PubMed Central

    Witkowski, Bartlomiej Slawomir; Luka, Grzegorz; Wachnicki, Lukasz; Gieraltowska, Sylwia; Kopalko, Krzysztof; Zielony, Eunika; Bieganski, Piotr; Placzek-Popko, Ewa; Godlewski, Marek

    2014-01-01

    Summary Selected properties of photovoltaic (PV) structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100) are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%. PMID:24605282

  12. Soft error rate simulation and initial design considerations of neutron intercepting silicon chip (NISC)

    NASA Astrophysics Data System (ADS)

    Celik, Cihangir

    -scale technologies. Prevention of SEEs has been studied and applied in the semiconductor industry by including radiation protection precautions in the system architecture or by using corrective algorithms in the system operation. Decreasing 10B content (20%of natural boron) in the natural boron of Borophosphosilicate glass (BPSG) layers that are conventionally used in the fabrication of semiconductor devices was one of the major radiation protection approaches for the system architecture. Neutron interaction in the BPSG layer was the origin of the SEEs because of the 10B (n,alpha) 7Li reaction products. Both of the particles produced have the capability of ionization in the silicon substrate region, whose thickness is comparable to the ranges of these particles. Using the soft error phenomenon in exactly the opposite manner of the semiconductor industry can provide a new neutron detection system based on the SERs in the semiconductor memories. By investigating the soft error mechanisms in the available semiconductor memories and enhancing the soft error occurrences in these devices, one can convert all memory using intelligent systems into portable, power efficient, directiondependent neutron detectors. The Neutron Intercepting Silicon Chip (NISC) project aims to achieve this goal by introducing 10B-enriched BPSG layers to the semiconductor memory architectures. This research addresses the development of a simulation tool, the NISC Soft Error Analysis Tool (NISCSAT), for soft error modeling and analysis in the semiconductor memories to provide basic design considerations for the NISC. NISCSAT performs particle transport and calculates the soft error probabilities, or SER, depending on energy depositions of the particles in a given memory node model of the NISC. Soft error measurements were performed with commercially available, off-the-shelf semiconductor memories and microprocessors to observe soft error variations with the neutron flux and memory supply voltage. Measurement

  13. Structural Studies of the Initial Stages of Fluoride Epitaxy on Silicon and GERMANIUM(111)

    NASA Astrophysics Data System (ADS)

    Denlinger, Jonathan David

    The epitaxial growth of ionic insulators on semiconductor substrates is of interest due to fundamental issues of interface bonding and structure as well as to potential technological applications. The initial stages of Group IIa fluoride insulator growth on (111) Si and Ge substrates by molecular beam epitaxy are studied with the in situ combination of X-ray Photoelectron Spectroscopy (XPS) and Diffraction (XPD). While XPS probes the electronic structure, XPD reveals atomic structure. In addition, low energy electron diffraction (LEED) is used to probe surface order and a separate study using X-ray standing wave (XSW) fluorescence reveals interface cation bonding sites. Following the formation of a chemically-reacted interface layer in CaF_2 epitaxy on Si(111), the morphology of the subsequent bulk layers is found to be dependent on substrate temperature and incident flux rate. At temperatures >=600 ^circC a transition from three -dimensional island formation at low flux to laminar growth at higher flux is observed with bulk- and interface-resolved XPD. At lower substrate temperatures, laminar growth is observed at all fluxes, but with different bulk nucleation behavior due to changes in the stoichiometry of the interface layer. This new observation of kinetic effects on the initial nucleation in CaF_2 epitaxy has important ramifications for the formation of thicker heterostructures for scientific or device applications. XPS and XPD are also used to identify for the first time, surface core-level species of Ca and F, and a secondary interface-shifted F Auger component arising from a second-layer site directly above interface-layer Ca atoms. The effects of lattice mismatch (from -3% to 8%) are investigated with various growths of Ca_{rm x}Sr _{rm 1-x}F_2 on Si and Ge (111) substrates. Triangulation of (111) and (220) XSW indicates a predominance of 3-fold hollow Sr bonding sites coexisting with 4-fold top sites for monolayers of SrF_2 on Si. XSW and LEED reveal a

  14. P-type electronic and thermal transport properties of Mg2Sn1-xSix

    NASA Astrophysics Data System (ADS)

    Kim, Sunphil; Wiendlocha, Bartlomiej; Heremans, Joseph P.

    2013-03-01

    P-type Mg2Sn doped with various acceptors(1)(2) has been studied as a potential thermoelectric material. Because of its narrow band gap and high lattice thermal conductivity, the zT values of the binary compound are limited: zTmax reported is 0.3(3). In this work, we synthesize and characterize p-type-doped Mg2Sn1-xSix with various acceptors. Silicon is added in order to widen the band gap and scatter the phonons. The conduction band degeneracy that yields excellent zT in n-type material in the Mg2Sn1-xSix alloy system unfortunately does not apply to p-type material. Thermomagnetic and galvanomagnetic properties (electrical resistivity, Seebeck, Hall, and Nernst coefficients) are measured, along with thermal conductivity and band gap measurements. Finally, zT values are reported. (1) H. Y. Chen et al. Journal of Electronic Materials, Vol. 38, No. 7, 2009 (2) S. Choi et al. Journal of Electronic Materials, Vol. 41, No. 6, 2012 (3) H. Y. Chen et al. Phys. Status Solidi A 207, No. 11, 2523-2531 (2010) The work is supported by the joint NSF/DOE program on thermoelectrics, NSF-CBET-1048622

  15. Synthesis of p-type GaN nanowires.

    PubMed

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-09-21

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

  16. Performances of miniature microstrip detectors made on oxygen enriched p-type substrates after very high proton irradiation

    NASA Astrophysics Data System (ADS)

    Casse, G.; Allport, P. P.; Martí i Garcia, S.; Lozano, M.; Turner, P. R.

    2004-12-01

    Silicon microstrip detectors with n-type implant read-out strips on FZ p-type bulk (n-in-p) show superior charge collection properties, after heavy irradiation, to the more standard p-strips in n-type silicon (p-in-n). It is also well established that oxygen-enriched n-type silicon substrates show better performance, in terms of degradation of the full depletion voltage after charged hadron irradiation, than the standard FZ silicon used for high energy physics detectors. Silicon microstrip detectors combining both the advantages of oxygenation and of n-strip read-out (n-in-n) have achieved high radiation tolerance to charged hadrons. The manufacturing of n-in-n detectors though requires double-sided processing, resulting in more complicated and expensive devices than standard p-in-n. A cheaper single-sided option, that still combines these advantages, is to use n-in-p devices. P-type FZ wafers have been oxygen-enriched by high temperature diffusion from an oxide layer and succesfully used to process miniature (1×1 cm 2) microstrip detectors. These detectors have been irradiated with 24 GeV/c protons in the CERN/PS T7 irradiation area up to ˜7.5×10 15 cm -2. We report results with these irradiated detectors in terms of the charge collection efficiency as a function of the applied bias voltage.

  17. Ohmic contact to p-type indium phosphide

    NASA Technical Reports Server (NTRS)

    Hawrylo, F. Z.

    1980-01-01

    Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.

  18. p-type conduction in sputtered indium oxide films

    SciTech Connect

    Stankiewicz, Jolanta; Alcala, Rafael; Villuendas, Francisco

    2010-05-10

    We report p-type conductivity in intrinsic indium oxide (IO) films deposited by magnetron sputtering on fused quartz substrates under oxygen-rich ambient. Highly oriented (111) films were studied by x-ray diffraction, optical absorption, and Hall effect measurements. We fabricated p-n homojunctions on these films.

  19. High carrier concentration p-type transparent conducting oxide films

    DOEpatents

    Yan, Yanfa; Zhang, Shengbai

    2005-06-21

    A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

  20. Synthesis of p-type GaN nanowires

    NASA Astrophysics Data System (ADS)

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-08-01

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo

  1. Real-time Monitoring of Surface-Initiated Atom Transfer Radical Polymerization Using Silicon Photonic Microring Resonators: Implications for Combinatorial Screening of Polymer Brush Growth Conditions

    PubMed Central

    Limpoco, F. Ted; Bailey, Ryan C.

    2011-01-01

    We directly monitor in parallel and in real-time the temporal profiles of polymer brushes simultaneously grown via multiple ATRP reaction conditions on a single substrate using arrays of silicon photonic microring resonators. In addition to probing relative polymerization rates, we also show the ability to evaluate the dynamic properties of the in situ grown polymers. Taken together, this presents a powerful new platform for studying modified interfaces that may allow for the combinatorial optimization of surface initiated polymerization conditions. PMID:21899288

  2. Thermoelectric properties of gallium-doped p-type germanium

    NASA Astrophysics Data System (ADS)

    Ohishi, Yuji; Takarada, Sho; Aikebaier, Yusufu; Muta, Hiroaki; Kurosaki, Ken; Yamanaka, Shinsuke; Miyazaki, Yoshinobu; Uchida, Noriyuki; Tada, Tetsuya

    2016-05-01

    In this study, the temperature-dependent thermoelectric properties of p-type single-crystal Ge, which is a useful material for thermoelectric applications owing to its significantly high carrier mobility, were investigated. The thermoelectric properties of Ga-doped (5.7 × 1016, 3.4 × 1018, and 1.0 × 1019 cm-3) p-type single-crystal Ge were measured from room temperature to 770 K. The sample with a carrier concentration of 1.0 × 1019 cm-3 showed the highest thermoelectric figure of merit, ZT, over the entire measured temperature range. The maximum ZT value was 0.06 at 650 K. A theoretical model based on the Boltzmann transport equation with relaxation-time approximation was developed and quantitatively reproduced the experimentally observed data. The optimal impurity concentration predicted by this model was 3 × 1019 cm-3 at 300 K and increased with temperature.

  3. P-type Oxides and the Growth of Heterostructure Oxide Devices

    NASA Astrophysics Data System (ADS)

    Hosono, Hideo

    2002-03-01

    Transparent conductive oxides (TCOs) are widely used as transparent metallic electrodes for various displays and solar cells. However, even though TCO is an n-type semiconductor, there is almost no application based on the active function as a compound semiconductor. The primary reason is because most active functions in semiconductors come from the characteristic properties of p-n junction but TCOs do not have a p-type. We anticipate that new frontier of transparent oxide semiconductors (TOSs) utilizing both optical transparency and electron activity in semiconductors will be opened if a p-type TCO is realized. In 1997, we reported on CuAlO2 (thin films) as the first p-type TCO along with a chemical design concept to explore the candidate materials. After that, a series of p-type TCOs based on a Cu+ -based system have been reported following the design concept, i.e., CuGaO2, CuInO2, and SrCu2O2. In 1999, a transparent p-n heterojunction diode exhibiting a rectifying I-V characteristic was fabricated using a combination of p-SrCu2O2 (SCO) and n-ZnO. Ultraviolet-emitting diode (UV-LED) is a typical active device, which can use the features of TOSs. Thus, since the initiation of our project (October, 1999), we concentrated our effort on the fabrication of UV-LED based on transparent p-n junction composed of TOSs. The fabrication was realized(APL,77,475,2000) by the formation of p-n heterojunction composed of heteroepitaxially grown p-SCO and n-ZnO. In this talk I will review our approach to P-type TCOs and UV-LED based on PN heterojuction utilizing TCOs along with recent advances.

  4. Light-induced anodisation of silicon for solar cell passivation

    NASA Astrophysics Data System (ADS)

    Cui, J.; Wang, X.; Opila, R.; Lennon, A.

    2013-11-01

    This paper reports a new method for forming anodic oxides on silicon surfaces using the light-induced current of pn-junction solar cells to make p-type silicon surfaces anodic. The light-induced anodisation process enables anodic oxide layers as thick as 79 nm to be formed at room temperature in a faster, more uniform, and controllable manner compared to previously reported clip-based anodisation methods. Although the effective minority carrier lifetime decreased immediately after light-induced anodisation from initial values measured with an 17 nm thermally grown oxide on both wafer surfaces, the 1-sun implied open circuit voltage of wafers on which the thermally grown oxide on the p-type surface was replaced by an anodic oxide of the same thickness could be returned to its initial value of ˜635 mV (for 3-5 Ω-cm Cz silicon wafers) after a 400 °C anneal in oxygen and then forming gas. The passivation of the formed anodic oxide layers was stable for a period of 50 days providing the oxide was protected by a 75 nm thick silicon nitride capping layer.

  5. Fabrication and Characterization of a Porous Silicon Drug Delivery System with an Initiated Chemical Vapor Deposition Temperature-Responsive Coating.

    PubMed

    McInnes, Steven J P; Szili, Endre J; Al-Bataineh, Sameer A; Vasani, Roshan B; Xu, Jingjing; Alf, Mahriah E; Gleason, Karen K; Short, Robert D; Voelcker, Nicolas H

    2016-01-12

    This paper reports on the fabrication of a pSi-based drug delivery system, functionalized with an initiated chemical vapor deposition (iCVD) polymer film, for the sustainable and temperature-dependent delivery of drugs. The devices were prepared by loading biodegradable porous silicon (pSi) with a fluorescent anticancer drug camptothecin (CPT) and coating the surface with temperature-responsive poly(N-isopropylacrylamide-co-diethylene glycol divinyl ether) (pNIPAM-co-DEGDVE) or non-stimulus-responsive poly(aminostyrene) (pAS) via iCVD. CPT released from the uncoated oxidized pSi control with a burst release fashion (∼21 nmol/(cm(2) h)), and this was almost identical at temperatures both above (37 °C) and below (25 °C) the lower critical solution temperature (LCST) of the switchable polymer used, pNIPAM-co-DEGDVE (28.5 °C). In comparison, the burst release rate from the pSi-pNIPAM-co-DEGDVE sample was substantially slower at 6.12 and 9.19 nmol/(cm(2) h) at 25 and 37 °C, respectively. The final amount of CPT released over 16 h was 10% higher at 37 °C compared to 25 °C for pSi coated with pNIPAM-co-DEGDVE (46.29% vs 35.67%), indicating that this material can be used to deliver drugs on-demand at elevated temperatures. pSi coated with pAS also displayed sustainable drug delivery profiles, but these were independent of the release temperature. These data show that sustainable and temperature-responsive delivery systems can be produced by functionalization of pSi with iCVD polymer films. Benefits of the iCVD approach include the application of the iCVD coating after drug loading without causing degradation of the drug commonly caused by exposure to factors such as solvents or high temperatures. Importantly, the iCVD process is applicable to a wide array of surfaces as the process is independent of the surface chemistry and pore size of the nanoporous matrix being coated.

  6. Quasi-perpetual discharge behaviour in p-type Ge-air batteries.

    PubMed

    Ocon, Joey D; Kim, Jin Won; Abrenica, Graniel Harne A; Lee, Jae Kwang; Lee, Jaeyoung

    2014-11-01

    Metal-air batteries continue to become attractive energy storage and conversion systems due to their high energy and power densities, safer chemistries, and economic viability. Semiconductor-air batteries - a term we first define here as metal-air batteries that use semiconductor anodes such as silicon (Si) and germanium (Ge) - have been introduced in recent years as new high-energy battery chemistries. In this paper, we describe the excellent doping-dependent discharge kinetics of p-type Ge anodes in a semiconductor-air cell employing a gelled KOH electrolyte. Owing to its Fermi level, n-type Ge is expected to have lower redox potential and better electronic conductivity, which could potentially lead to a higher operating voltage and better discharge kinetics. Nonetheless, discharge measurements demonstrated that this prediction is only valid at the low current regime and breaks down at the high current density region. The p-type Ge behaves extremely better at elevated currents, evident from the higher voltage, more power available, and larger practical energy density from a very long discharge time, possibly arising from the high overpotential for surface passivation. A primary semiconductor-air battery, powered by a flat p-type Ge as a multi-electron anode, exhibited an unprecedented full discharge capacity of 1302.5 mA h gGe(-1) (88% anode utilization efficiency), the highest among semiconductor-air cells, notably better than new metal-air cells with three-dimensional and nanostructured anodes, and at least two folds higher than commercial Zn-air and Al-air cells. We therefore suggest that this study be extended to doped-Si anodes, in order to pave the way for a deeper understanding on the discharge phenomena in alkaline metal-air conversion cells with semiconductor anodes for specific niche applications in the future.

  7. Quasi-perpetual discharge behaviour in p-type Ge-air batteries.

    PubMed

    Ocon, Joey D; Kim, Jin Won; Abrenica, Graniel Harne A; Lee, Jae Kwang; Lee, Jaeyoung

    2014-11-01

    Metal-air batteries continue to become attractive energy storage and conversion systems due to their high energy and power densities, safer chemistries, and economic viability. Semiconductor-air batteries - a term we first define here as metal-air batteries that use semiconductor anodes such as silicon (Si) and germanium (Ge) - have been introduced in recent years as new high-energy battery chemistries. In this paper, we describe the excellent doping-dependent discharge kinetics of p-type Ge anodes in a semiconductor-air cell employing a gelled KOH electrolyte. Owing to its Fermi level, n-type Ge is expected to have lower redox potential and better electronic conductivity, which could potentially lead to a higher operating voltage and better discharge kinetics. Nonetheless, discharge measurements demonstrated that this prediction is only valid at the low current regime and breaks down at the high current density region. The p-type Ge behaves extremely better at elevated currents, evident from the higher voltage, more power available, and larger practical energy density from a very long discharge time, possibly arising from the high overpotential for surface passivation. A primary semiconductor-air battery, powered by a flat p-type Ge as a multi-electron anode, exhibited an unprecedented full discharge capacity of 1302.5 mA h gGe(-1) (88% anode utilization efficiency), the highest among semiconductor-air cells, notably better than new metal-air cells with three-dimensional and nanostructured anodes, and at least two folds higher than commercial Zn-air and Al-air cells. We therefore suggest that this study be extended to doped-Si anodes, in order to pave the way for a deeper understanding on the discharge phenomena in alkaline metal-air conversion cells with semiconductor anodes for specific niche applications in the future. PMID:24975009

  8. P-type Gate Electrode Formation Using B18H22 Ion Implantation

    NASA Astrophysics Data System (ADS)

    Henke, Dietmar; Jakubowski, Frank; Deichler, Josef; Venezia, Vincent C.; Ameen, M. S.; Harris, M. A.

    2006-11-01

    We have investigated the use of octadecaborane (B18H22) cluster ion implantation to form highly active p-type gate electrodes in a 90 nm CMOS process. As device dimensions scale, the influence of poly-depletion and short channel effect control on device performance continues to become more significant. Increasing gate electrode doping via high dose ion implantation is a standard method for reducing poly-depletion. Poly-silicon gate doping with the molecular ion B18H22 offers throughput advantages over monatomic B ion implantation. For instance each molecular ion introduces 18-B atoms, thereby reducing the implant dose. In addition, each B constituent of the molecular ion is implanted with 1/20th the ion energy, making it possible to achieve low energy dopant distribution while taking advantage of higher beam energy currents. In this work, B18H22 implantation conditions (energy, dose) were matched to those of the standard B+ process of record (POR) used for gate electrode doping. We show that the poly-depletion, threshold voltage, and yield of devices implanted with B18H22 are comparable to those implanted with the POR. We combine this device results with materials data to demonstrate that the high dose implants necessary to form p-type gate electrodes with minimum poly-depletion can be achieved with B18H22 ion implants without impacting the device performance.

  9. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    NASA Technical Reports Server (NTRS)

    Beaty, John S.; Rolfe, Jonathon L.; Vandersande, Jan; Fleurial, Jean-Pierre

    1992-01-01

    Spark erosion was used to produce ultra-fine particles of SiGe thermoelectric material and boron nitride, an inert phonon-scattering material. A homogeneous powder was made by mixing the two powders. The mixture was hot pressed to produce a thermoelectric material with uniformity dispersed, ultra-fine, inert, phonon-scattering centers. It is shown that, in samples with inert boron nitride or silicon nitride, thermal conductivity of a SiGe alloy can be reduced by about 25 percent while maintaining the electrical properties of the samples. Annealing of all the samples at 1525 K caused grain growth to over a micron, eliminating the detrimental effect attributable to small grains. Only in the sample with boron nitride the thermal conductivity did remain well below that for standard p-type SiGe (about 25 percent), while the electrical resistivity and Seebeck coefficient were very close to the values for standard p-type 80/20 SiGe.

  10. Process for forming retrograde profiles in silicon

    DOEpatents

    Weiner, Kurt H.; Sigmon, Thomas W.

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  11. Process for forming retrograde profiles in silicon

    DOEpatents

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  12. P-type conductivity in annealed strontium titanate

    SciTech Connect

    Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

    2015-12-15

    Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO{sub 3}, or STO) samples that were annealed at 1200°C. Room-temperature mobilities above 100 cm{sup 2}/V s were measured, an order of magnitude higher than those for electrons (5-10 cm{sup 2}/V s). Average hole densities were in the 10{sup 9}-10{sup 10} cm{sup −3} range, consistent with a deep acceptor.

  13. Bi-Se doped with Cu, p-type semiconductor

    DOEpatents

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  14. Metal Fluoride Inhibition of a P-type H+ Pump

    PubMed Central

    Pedersen, Jesper Torbøl; Falhof, Janus; Ekberg, Kira; Buch-Pedersen, Morten Jeppe; Palmgren, Michael

    2015-01-01

    The plasma membrane H+-ATPase is a P-type ATPase responsible for establishing electrochemical gradients across the plasma membrane in fungi and plants. This essential proton pump exists in two activity states: an autoinhibited basal state with a low turnover rate and a low H+/ATP coupling ratio and an activated state in which ATP hydrolysis is tightly coupled to proton transport. Here we characterize metal fluorides as inhibitors of the fungal enzyme in both states. In contrast to findings for other P-type ATPases, inhibition of the plasma membrane H+-ATPase by metal fluorides was partly reversible, and the stability of the inhibition varied with the activation state. Thus, the stability of the ATPase inhibitor complex decreased significantly when the pump transitioned from the activated to the basal state, particularly when using beryllium fluoride, which mimics the bound phosphate in the E2P conformational state. Taken together, our results indicate that the phosphate bond of the phosphoenzyme intermediate of H+-ATPases is labile in the basal state, which may provide an explanation for the low H+/ATP coupling ratio of these pumps in the basal state. PMID:26134563

  15. Microwave Induced Direct Bonding of Single Crystal Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Budraa, N. K.; Jackson, H. W.; Barmatz, M.

    1999-01-01

    We have heated polished doped single-crystal silicon wafers in a single mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates. A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry's at positions of high magnetic field. This process was conducted in vacuum to exclude plasma effects. This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.

  16. RETRACTION: Electronic characteristics of n-type nanocrystalline/p-type crystalline silicon heterostructure

    NASA Astrophysics Data System (ADS)

    Wei, Wensheng; Wang, Tianmin; He, Yuliang

    2008-03-01

    It has come to the attention of IOP Publishing that this article should not have been submitted for publication owing to its substantial replication of an earlier paper (Wensheng Wei, Tianmin Wang and Yuliang He 2008 Investigation on high mobility nanocrystalline Si with crystalline Si heterostructure Superlattices and Microstructures 41 216-226). Consequently this paper has been retracted by IOP Publishing.

  17. p-Type NiO Hybrid Visible Photodetector.

    PubMed

    Mallows, John; Planells, Miquel; Thakare, Vishal; Bhosale, Reshma; Ogale, Satishchandra; Robertson, Neil

    2015-12-23

    A novel hybrid visible-light photodetector was created using a planar p-type inorganic NiO layer in a junction with an organic electron acceptor layer. The effect of different oxygen pressures on formation of the NiO layer by pulsed laser deposition shows that higher pressure increases the charge carrier density of the film and lowers the dark current in the device. The addition of a monolayer of small molecules containing conjugated π systems and carboxyl groups at the device interface was also investigated and with correct alignment of the energy levels improves the device performance with respect to the quantum efficiency, responsivity, and photogeneration. The thickness of the organic layer was also optimized for the device, giving a responsivity of 1.54 × 10(-2) A W(-1) in 460 nm light. PMID:26654105

  18. p-Type NiO Hybrid Visible Photodetector.

    PubMed

    Mallows, John; Planells, Miquel; Thakare, Vishal; Bhosale, Reshma; Ogale, Satishchandra; Robertson, Neil

    2015-12-23

    A novel hybrid visible-light photodetector was created using a planar p-type inorganic NiO layer in a junction with an organic electron acceptor layer. The effect of different oxygen pressures on formation of the NiO layer by pulsed laser deposition shows that higher pressure increases the charge carrier density of the film and lowers the dark current in the device. The addition of a monolayer of small molecules containing conjugated π systems and carboxyl groups at the device interface was also investigated and with correct alignment of the energy levels improves the device performance with respect to the quantum efficiency, responsivity, and photogeneration. The thickness of the organic layer was also optimized for the device, giving a responsivity of 1.54 × 10(-2) A W(-1) in 460 nm light.

  19. Purified silicon production system

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  20. Microdistribution of oxygen in silicon

    NASA Technical Reports Server (NTRS)

    Murgai, A.; Chi, J. Y.; Gatos, H. C.

    1980-01-01

    The microdistribution of oxygen in Czochralskii-grown, p-type silicon crystals was determined by using the SEM in the EBIC mode in conjunction with spreading resistance measurements. When the conductivity remained p-type, bands of contrast were observed in the EBIC image which corresponded to maxima in resistivity. When at the oxygen concentration maxima the oxygen donor concentration exceeded the p-type dopant concentration, an inversion of the conductivity occurred. It resulted in the formation of p-n junctions in a striated configuration and the local inversion of the EBIC image contrast. By heat-treating silicon at 1000 C prior to the activation of oxygen donors, some silicon-oxygen micro-precipitates were observed in the EBIC image within the striated oxygen concentration maxima.

  1. Effect of small scattering centers on the thermoelectric properties of p-type SiGe alloys

    NASA Technical Reports Server (NTRS)

    Beaty, John S.; Rolfe, Jonathan L.; Vandersande, Jan W.

    1991-01-01

    Theory predicts that the addition of ultra-fine, inert, phonon-scattering centers to thermoelectric materials will reduce their thermal conductivity. To investigate this prediction, ultrafine particulates (20 to 120 A) of silicon nitride have been added to boron-doped, p-type, 80/20 SiGe. All of the SiGe samples produced from ultrafine powder have lower thermal conductivities than standard SiGe, but high-temperature heat treatment increases the thermal conductivity back to the value for standard SiGe. However, the SiGe samples with silicon nitride, inert, phonon-scattering centers retained the lower thermal conductivity after several heat treatments. A reduction of approximately 25 percent in thermal conductivity has been achieved in these samples. The magnitude of the reduction agrees with theoretical predictions.

  2. Electronic processes in uniaxially stressed p-type germanium

    SciTech Connect

    Dubon, O.D. Jr.

    1996-02-01

    Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

  3. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    SciTech Connect

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki; Hai, Pham Nam

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  4. Greyscale proton beam writing in p-type Gallium Arsenide

    NASA Astrophysics Data System (ADS)

    Diering, D.; Spemann, D.; Lenzner, J.; Müller, St.; Böntgen, T.; von Wenckstern, H.

    2013-07-01

    Proton beam writing (PBW) is a well known method for micromachining, e.g. of semiconductors. Up to now, only few indication is given on how the resulting structure height in micromachined semiconductors can be controlled by means of fluence variation. This approach for 3D-microstructuring, called Greyscale PBW, was already successfully demonstrated for negative photoresists. In this study (1 0 0) p-type Gallium Arsenide (GaAs) was irradiated with 2.28 MeV protons and fluences in the range from 1.2×1014 H+ cm-2 to 1.0×1018 H+ cm-2 at the ion beam laboratory LIPSION and subsequently electrochemically etched with 10%-KOH. A linear dependency of structure height on ion fluence was established. In this way, pyramid-like structures as well as concave-shaped structures could be created. GaAs showed a lateral anisotropic etch behaviour during the development step with preferential etching along the [0 1 1] directions. On some structures the surface roughness and the change of conductivity were investigated by atomic force and scanning capacitance microscopy, respectively. The rms roughness of the surface of the structures was 5.4 nm and 10.6 nm for a fluence of 7.8×1015 H+ cm-2 and 1.2×1017 H+ cm-2, respectively. We observed an increasing etching rate for fluences larger than 1016 H+ cm-2.

  5. Synthesis of poly(silanes) and poly(silane)-modified silicones for use as novel initiator systems

    NASA Astrophysics Data System (ADS)

    Goldslager, Barry Andrew

    The development of new methods for the synthesis of polymeric silanes represents an exciting new field in organosilicon chemistry. The synthetic methods developed in this research were used to produce reactive polymeric silanes which in turn were used in applications as photoinitiators/modifiers or as self curing resins. This thesis describes investigations of the synthesis of a variety of reactive polymeric silanes, modification of the polymeric silanes and their use as photoinitiators and self curing resins. The silanes were synthesized by either Wurtz type coupling, which uses a sodium dispersion to couple halogenated silanes together, or by metallocene catalysis, which uses transition metal catalysts to couple silicon hydrides together through dehydrogenative coupling. The resulting materials were demonstrated to be useful as photoinitiators for acrylic/methacrylic systems and that they can be modified for use in other systems. The modification of the polymeric silanes where carried out using a either a hydrosilylation reaction which involves the coupling of an active silicon hydride with an active vinyl group, or a condensation reaction between an active chlorosilane with an active hydroxyl group. Several unique materials were synthesized using these two methods and consist of the following: (1) Linear poly(phenylsdane)-graft-vinyl terminated poly(dimethylsiloxane); (2) Networked poly(phenylisdane)-graft-vinyl terminated poly(dimethylsiloxane); (3) Oligo(methylphenyisilane)-alt-vinyl terminated poly(dimethylsiloxane); (4) Various polymeric silanes. These materials where successfully used as photoinitators for acrylate and methacrylate systems such as isobornyl acrylate, 2-hydroxypropyl acrylate, vinyl terminated polydimethylsiloxane, and self curing resins which showed excellent properties such as nontacky surfaces, high glass transition temperatures, Tgs, and crosslinked materials for use as potting agents. The modified silanes showed good solubility in many

  6. Membrane Targeting of P-type ATPases in Plant Cells

    SciTech Connect

    Jeffrey F. Harper, Ph.D.

    2004-06-30

    How membrane proteins are targeted to specific subcellular locations is a very complex and poorly understood area of research. Our long-term goal is to use P-type ATPases (ion pumps), in a model plant system Arabidopsis, as a paradigm to understand how members of a family of closely related membrane proteins can be targeted to different subcellular locations. The research is divided into two specific aims. The first aim is focused on determining the targeting destination of all 10 ACA-type calcium pumps (Arabidopsis Calcium ATPase) in Arabidopsis. ACAs represent a plant specific-subfamily of plasma membrane-type calcium pumps. In contrast to animals, the plant homologs have been found in multiple membrane systems, including the ER (ACA2), tonoplast (ACA4) and plasma membrane (ACA8). Their high degree of similarity provides a unique opportunity to use a comparative approach to delineate the membrane specific targeting information for each pump. One hypothesis to be tested is that an endomembrane located ACA can be re-directed to the plasma membrane by including targeting information from a plasma membrane isoform, ACA8. Our approach is to engineer domain swaps between pumps and monitor the targeting of chimeric proteins in plant cells using a Green Fluorescence Protein (GFP) as a tag. The second aim is to test the hypothesis that heterologous transporters can be engineered into plants and targeted to the plasma membrane by fusing them to a plasma membrane proton pump. As a test case we are evaluating the targeting properties of fusions made between a yeast sodium/proton exchanger (Sod2) and a proton pump (AHA2). This fusion may potentially lead to a new strategy for engineering salt resistant plants. Together these aims are designed to provide fundamental insights into the biogenesis and function of plant cell membrane systems.

  7. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    PubMed Central

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-01-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors. PMID:27349378

  8. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    NASA Astrophysics Data System (ADS)

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-06-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.

  9. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating.

    PubMed

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-01-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors. PMID:27349378

  10. Modeling of thin, back-wall silicon solar cells

    NASA Technical Reports Server (NTRS)

    Baraona, C. R.

    1979-01-01

    The performance of silicon solar cells with p-n junctions on the nonilluminated surface (i.e., upside-down or back-wall cells) was calculated. These structures consisted of a uniformly shaped p-type substrate layer, a p(+)-type field layer on the front (illuminated) surface, and a shallow, n-type junction on the back (nonilluminated) surface. A four-layer solar cell model was used to calculate efficiency, open-circuit voltage, and short-circuit current. The effect on performance of p-layer thickness and resistivity was determined. The diffusion length was varied to simulate the effect of radiation damage. The results show that peak initial efficiencies greater than 15 percent are possible for cell thicknesses or 100 micrometers or less. After 10 years of radiation damage in geosynchronous orbit, thin (25 to 50 micrometers thick) cells made from 10 to 100 ohm cm material show the smallest decrease (approximately 10 percent) in performance.

  11. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs.

    PubMed

    Zhang, Jia-Hong; Huang, Qing-An; Yu, Hong; Lei, Shuang-Ying

    2009-01-01

    In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET) pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.

  12. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs.

    PubMed

    Zhang, Jia-Hong; Huang, Qing-An; Yu, Hong; Lei, Shuang-Ying

    2009-01-01

    In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET) pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors. PMID:22574043

  13. Picosecond intersubband hole relaxation in p-type quantum wells

    SciTech Connect

    Xu, Z.; Fauchet, P.M.; Rella, C.W.; Schwettman, H.A.

    1995-12-31

    We report the first direct measurement of the relaxation time of holes in p-type quantum wells using tunable, subpicosecond mid-infrared laser pulses in a pump-probe arrangement. The QW layers consisted of 50 In{sub 0.5}Ga{sub 0.5}As/Al{sub 0.5}Ga{sub 0.5}As periods. The In{sub 0.5}Ga{sub 0.5}As well was 4 nm wide and the Al{sub 0.5}Ga{sub 0.5}As barrier was 8 nm wide. The dopant concentration was 10{sup 19} CM{sup -3} which corresponds to a sheet density of 1.2 x 10{sup 13} CM{sup -2}. The room temperature IR spectrum showed a 50 meV wide absorption peak at 5.25 {mu}m (220 meV). This energy agrees with the calculated n=1 heavy hole to n=1 light hole transition energy of 240 meV (150 meV for strain and 90 meV for confinement). The large absorption width results from hole-hole scattering and the difference in dispersion relations between the two subbands. The equal-wavelength pump-probe transmission measurements were performed using the Stanford free electron laser (FEL). The FEL pulses were tuned between 4 and 6 {mu} m and their duration was less than 1 ps. The measurements were performed as a function of temperature, pump wavelength and intensity (from 0.3 to 10 GW/cm{sup 2}). In all our experiments, we find an increase of transmission (decrease of absorption or bleaching) following photopumping, which recovers as a single exponential with a time constant (relaxation time) of the order of 1 picosecond. The maximum change in transmission is linear with pump 2 intensity below 1 GW/cm{sup 2} and saturates to {approximately}3% with a saturation intensity I{sub sat} of 3 GW/cm{sup 2}. As the saturation regime is entered, the relaxation time increases from 0.8 ps to 1.8 ps. This relaxation time depends on the temperature T: it increases from 0.8 ps to 1.3 ps as T decreases from 300 K to 77 K. Finally, when we tune the laser through the absorption band, the magnitude of the signal changes but its temporal behavior does not change, within the accuracy of the measurements.

  14. Nitrogen doped p-type ZnO films and p-n homojunction

    NASA Astrophysics Data System (ADS)

    Snigurenko, D.; Kopalko, K.; Krajewski, T. A.; Jakiela, R.; Guziewicz, E.

    2015-01-01

    We demonstrate the ZnO homojunction fully obtained by the atomic layer deposition technique at low temperature growth of 100-130 °C. For the n-type partner of the junction we used undoped ZnO film obtained at 130 °C, while nitrogen doped ZnO acted as the p-type partner of the junction. Nitrogen was introduced into the ZnO film during the ALD process by using ammonia water as an oxygen precursor and diethylzinc as a zinc precursor. The p-type conductivity of ZnO was activated by the subsequent annealing of the ZnO:N film in an oxygen or nitrogen atmosphere. The initial rectification ratio of 102 at ±2 V was raised to 4 · 104 by inserting an ultrathin Al2O3 layer between p- and n-type ZnO. The resulting rectification ratio is among the best parameters reported for a ZnO homojunction so far.

  15. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

    NASA Astrophysics Data System (ADS)

    Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

    2009-08-01

    Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

  16. Stress effects on the initial lithiation of crystalline silicon nanowires: Reactive molecular dynamics simulations using ReaxFF

    SciTech Connect

    Ostadhossein, Alireza; Cubuk, Ekin D.; Tritsaris, Georgios A.; Kaxiras, Efthimios; Zhang, Sulin; Adri C. T. van Duin

    2014-12-18

    Silicon (Si) has been recognized as a promising anode material for the next-generation high-capacity lithium (Li)-ion batteries because of its high theoretical energy density. Recent in situ transmission electron microscopy (TEM) revealed that the electrochemical lithiation of crystalline Si nanowires (c-SiNWs) proceeds by the migration of the interface between the lithiated Si (LixSi) shell and the pristine unlithiated core, accompanied by solid-state amorphization. The underlying atomic mechanisms of Li insertion into c-Si remain poorly understood. In this research, we perform molecular dynamics (MD) simulations using the reactive force field (ReaxFF) to characterize the lithiation process of c-SiNWs. Our calculations show that ReaxFF can accurately reproduce the energy barriers of Li migration from DFT calculations in both crystalline (c-Si) and amorphous Si (a-Si). The ReaxFF-based MD simulations reveal that Li insertion into interlayer spacing between two adjacent (111) planes results in the peeling-off of the (111) facets and subsequent amorphization, in agreement with experimental observations. We find that breaking of the Si–Si bonds between (111)-bilayers requires a rather high local Li concentration, which explains the atomically sharp amorphous–crystalline interface (ACI). Our stress analysis shows that lithiation induces compressive stress at the ACI layer, causing retardation or even the stagnation of the reaction front, also in good agreement with TEM observations. Lithiation at high temperatures (e.g. 1200 K) shows that Li insertion into c-SiNW results in an amorphous to crystalline phase transformation at Li : Si composition of ~4.2:1. In conclusion, our modeling results provide a comprehensive picture of the effects of reaction and diffusion-induced stress on the interfacial dynamics and mechanical degradation of SiNW anodes under chemo-mechanical lithiation.

  17. Stress effects on the initial lithiation of crystalline silicon nanowires: Reactive molecular dynamics simulations using ReaxFF

    DOE PAGESBeta

    Ostadhossein, Alireza; Cubuk, Ekin D.; Tritsaris, Georgios A.; Kaxiras, Efthimios; Zhang, Sulin; Adri C. T. van Duin

    2014-12-18

    Silicon (Si) has been recognized as a promising anode material for the next-generation high-capacity lithium (Li)-ion batteries because of its high theoretical energy density. Recent in situ transmission electron microscopy (TEM) revealed that the electrochemical lithiation of crystalline Si nanowires (c-SiNWs) proceeds by the migration of the interface between the lithiated Si (LixSi) shell and the pristine unlithiated core, accompanied by solid-state amorphization. The underlying atomic mechanisms of Li insertion into c-Si remain poorly understood. In this research, we perform molecular dynamics (MD) simulations using the reactive force field (ReaxFF) to characterize the lithiation process of c-SiNWs. Our calculations showmore » that ReaxFF can accurately reproduce the energy barriers of Li migration from DFT calculations in both crystalline (c-Si) and amorphous Si (a-Si). The ReaxFF-based MD simulations reveal that Li insertion into interlayer spacing between two adjacent (111) planes results in the peeling-off of the (111) facets and subsequent amorphization, in agreement with experimental observations. We find that breaking of the Si–Si bonds between (111)-bilayers requires a rather high local Li concentration, which explains the atomically sharp amorphous–crystalline interface (ACI). Our stress analysis shows that lithiation induces compressive stress at the ACI layer, causing retardation or even the stagnation of the reaction front, also in good agreement with TEM observations. Lithiation at high temperatures (e.g. 1200 K) shows that Li insertion into c-SiNW results in an amorphous to crystalline phase transformation at Li : Si composition of ~4.2:1. In conclusion, our modeling results provide a comprehensive picture of the effects of reaction and diffusion-induced stress on the interfacial dynamics and mechanical degradation of SiNW anodes under chemo-mechanical lithiation.« less

  18. Ultraviolet light-emitting diodes with polarization-doped p-type layer

    NASA Astrophysics Data System (ADS)

    Hu, Wenxiao; Qin, Ping; Song, Weidong; Zhang, Chongzhen; Wang, Rupeng; Zhao, Liangliang; Xia, Chao; Yuan, Songyang; Yin, Yian; Li, Shuti

    2016-09-01

    We report ultraviolet light emitting diode (LEDs) with polarization doped p-type layer. Fabricated LEDs with polarization doped p-type layer exhibited reduced forward voltage and enhanced light output power, compared to those with traditional p-type AlGaN layer. The improvement is attributed to improved hole concentration and the smooth valence band by the polarization enhanced p-type doping. Our simulated results reveal that this p-type layer can further enhance the performance of ultraviolet LEDs by removing the electron blocking layer (EBL).

  19. Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires

    PubMed Central

    2011-01-01

    Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination of non-degenerate transmission and reflection measurements reveal initial ultrafast state filling dynamics independent of the probing photon energy. This behavior is attributed to the occupation of states by photo-generated carriers in the intrinsic hole region of the p-type CuO nanowires located near the top of the valence band. Intensity measurements indicate an upper fluence threshold of 40 μJ/cm2 where carrier relaxation is mainly governed by the hole dynamics. The fast relaxation of the photo-generated carriers was determined to follow a double exponential decay with time constants of 0.4 ps and 2.1 ps. Furthermore, time-correlated single photon counting measurements provide evidence of three exponential relaxation channels on the nanosecond timescale. PMID:22151927

  20. Palladium contamination in silicon

    NASA Astrophysics Data System (ADS)

    Polignano, M. L.; Mica, I.; Ceresoli, M.; Codegoni, D.; Somaini, F.; Bianchi, I.; Volonghi, D.

    2015-04-01

    In this work palladium is characterized as a silicon contaminant by recombination lifetime, DLTS, C-V and C-t measurements of palladium-implanted wafers. Palladium introduced by ion implantation is found to remain in the solid solution in silicon after rapid thermal treatments, and to be a very effective recombination center. For this reason recombination lifetime measurements are the most sensitive method to detect palladium in silicon. Two palladium-related levels were found by DLTS in p-type material. One of these levels corresponds to a level reported in the literature as the single donor level of substitutional palladium. For what concerns MOS capacitors, palladium is responsible for negative oxide charge and for degradation of the generation lifetime. In addition, palladium is confirmed to be a very fast diffuser, which segregates at the wafer surface even with low temperature treatments (250 °C). Microscopy inspections showed that palladium precipitates and surface defects were formed upon segregation.

  1. Fabrication of ultrahydrophobic poly(lauryl acrylate) brushes on silicon wafer via surface-initiated atom transfer radical polymerization

    NASA Astrophysics Data System (ADS)

    Öztürk, Esra; Turan, Eylem; Caykara, Tuncer

    2010-11-01

    In this report, ultrahydrophobic poly(lauryl acrylate) [poly(LA)] brushes were synthesized by surface-initiated atom transfer radical polymerization (SI-ATRP) of lauryl acrylate (LA) in N,N-dimethylformamide (DMF) at 90 °C. The formation of ultrahydrophobic poly(LA) films, whose thickness can be turned by changing polymerization time, is evidenced by using the combination of ellipsometry, X-ray photoelectron spectroscopy (XPS), grazing angle attenuated total reflectance-Fourier transform infrared spectroscopy (GATR-FTIR), atomic force microscopy (AFM), gel permeation chromatography (GPC), and water contact angle measurements. The SI-ATRP can be conducted in a well-controlled manner, as revealed by the linear kinetic plot, linear evolution of number-average molecular weights ( M) versus monomer conversions, and the relatively narrow PDI (<1.28) of the grafted poly(LA) chains. The calculation of grafting parameters from experimental measurements indicated the synthesis of densely grafted poly(LA) films and allowed us to predict a "brushlike" conformation for the chains in good solvent. The poly(LA) brushes exhibited high water contact angle of 163.3 ± 2.8°.

  2. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOEpatents

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  3. Energy and angular anisotropy optimisation of a p-type diode for in vivo dosimetry in photon-beam radiotherapy.

    PubMed

    Greene, Simon; Price, Robert A

    2005-01-01

    We present simulation work using the Monte Carlo code MCNPX that shows that there is a possibility of improving the silicon p-type diode as a radiation dosemeter, by altering the construction of the diode. Altering the diode die thickness can reduce the inherent angular anisotropy of the diode, with little effect on its energy response. Conversely, the contact material and geometry have a large impact on the energy response with little effect on the inherent angular anisotropy. By correct choice of contact material, the typical over-response -100 keV relative to the response at 60Co energy can be reduced from approximately 20 to 4. It is expected that further enhancements may be made with different geometries and materials.

  4. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes R.

    1996-03-26

    A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

  5. Piezoresistance and hole transport in beryllium-doped silicon.

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Robertson, J. B.

    1972-01-01

    The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  6. Capacitance transients in p-type GaAs MOS structures and application to lifetime mapping during solar cell fabrication

    NASA Technical Reports Server (NTRS)

    Vitale, G.; Loferski, J. J.; Ercil, Y.

    1979-01-01

    Fabrication on p-type GaAs of MOS structures in which the quality of the oxide is such that the surface can be driven into deep inversion by a voltage pulse is reported. The capacitance transients in such MOS capacitors as a function of step amplitude and temperature were measured and the transients were analyzed by an extension of a method for silicon. The oxides were produced by plasma oxidation on an LPE-grown p-type GaAs specimen with N sub A of 3x10 to the 17th power/cu cm. The capacitors were produced by depositing 50 microns-diameter gold dots over the native oxide and, therefore, the lifetime is localized to the area under the dot. The method permits extraction of both the bulk lifetime and the interface recombination velocity. These parameters on samples with different N sub A were measured and a correlation between tau sub g and N sub A was found.

  7. Microgravity silicon zoning investigation

    NASA Technical Reports Server (NTRS)

    Kern, E. L.; Gill, G. L., Jr.

    1983-01-01

    A resistance heated zoner, suitable for early zoning experiments with silicon, was designed and put into operation. The initial power usage and size was designed for an shown to be compatible with payload carriers contemplated for the Shuttle. This equipment will be used in the definition and development of flight experiments and apparatus for float zoning silicon and other materials in microgravity.

  8. Ultra-thin ohmic contacts for p-type nitride light emitting devices

    DOEpatents

    Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

    2012-01-03

    A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

  9. Atomic scale investigation of silicon nanowires and nanoclusters

    PubMed Central

    2011-01-01

    In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers. PMID:21711788

  10. Silicone metalization

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  11. Silicone metalization

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  12. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

    PubMed Central

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

  13. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

    PubMed

    Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

  14. Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer

    PubMed Central

    2014-01-01

    The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is possible to fabricate the solar cells with silicon nanocrystal materials, whose bandgaps are wider than that of crystalline silicon. PACS 85.35.Be; 84.60.Jt; 78.67.Bf PMID:24936160

  15. Electronic transport properties of silicon clusters

    NASA Astrophysics Data System (ADS)

    Matsuura, Yukihito

    2016-02-01

    The electronic transport properties of silicon clusters were examined via theoretical calculations using the first-principles method. Additionally, p-type doping and n-type doping were analyzed by calculating conductance and current of boron- and phosphorus-doped silicon clusters. The p-type doping and n-type doping provided a new transmission peak at an energy level around the Fermi level to increase conductance. Furthermore, simultaneous boron and phosphorus doping resulted in noticeable rectifying characteristics, with the current drive in forward bias being three times higher than that in the reverse bias. A p-n junction was achieved even on a molecular scale.

  16. Crystallization of P-type ATPases by the High Lipid-Detergent (HiLiDe) Method.

    PubMed

    Sitsel, Oleg; Wang, Kaituo; Liu, Xiangyu; Gourdon, Pontus

    2016-01-01

    Determining structures of membrane proteins remains a significant challenge. A technique utilizing high lipid-detergent concentrations ("HiLiDe") circumvents the major bottlenecks of current membrane protein crystallization methods. During HiLiDe, the protein-lipid-detergent ratio is varied in a controlled way in order to yield initial crystal hits, which may be subsequently optimized by variation of the crystallization conditions and/or utilizing secondary detergents. HiLiDe preserves the advantages of classical lipid-based methods, yet is compatible with both the vapor diffusion and batch crystallization techniques. The method has been applied with particular success to P-type ATPases.

  17. Design of Shallow p-type Dopants in ZnO (Presentation)

    SciTech Connect

    Wei, S.H.; Li, J.; Yan. Y.

    2008-05-01

    ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.

  18. High performance p-type thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Caillat, Thierry (Inventor); Borshchevsky, Alexander (Inventor); Fleurial, Jean-Pierre (Inventor)

    2005-01-01

    The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4-xAxSb3-yBy wherein 0?x?4, A is a transition metal, B is a pnicogen, and 0?y?3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

  19. Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

    NASA Astrophysics Data System (ADS)

    Dib, E.; Carrillo-Nuñez, H.; Cavassilas, N.; Bescond, M.

    2016-01-01

    Junctionless transistors are being considered as one of the alternatives to conventional metal-oxide field-effect transistors. In this work, it is then presented a simulation study of silicon double-gated p-type junctionless transistors compared with its inversion-mode counterpart. The quantum transport problem is solved within the non-equilibrium Green's function formalism, whereas hole-phonon interactions are tackled by means of the self-consistent Born approximation. Our findings show that junctionless transistors should perform as good as a conventional transistor only for ultra-thin channels, with the disadvantage of requiring higher supply voltages in thicker channel configurations.

  20. The bonded unipolar silicon-silicon junction

    NASA Astrophysics Data System (ADS)

    Bengtsson, Stefan; Andersson, Gert I.; Andersson, Mats O.; Engström, Olof

    1992-07-01

    The electrical and optical properties of wafer bonded unipolar silicon-silicon junctions were investigated. The interfaces, both n-n type and p-p type, were prepared using wafers with hydrophilic surfaces. The current versus voltage characteristics, the current transients following stepwise changes in the applied bias, and the capacitance versus voltage characteristics as well as the temperature dependence of the current and capacitance were experimentally obtained and theoretically modeled. The proposed model assumes two distributions of interface states, one of acceptors and one of donors, causing a potential barrier at the bonded interface. It is argued that the origins of the interface states are impurities and crystallographic defects in the interfacial region. The capacitance of the bonded structures includes contributions from the depletion regions as well as from minority carriers. When bonded n-n type samples were illuminated with light of photon energies larger than the silicon band gap the current across the junction increased. This is caused by the photogenerated increase in the minority carrier concentration in the interfacial region, which results in a lowering of the potential barrier. Illumination of n-n type structures with light of photon energies lower than the band gap caused a considerable photocurrent at low temperatures. In this case the observed behavior cannot be explained by interaction with the interface states. Instead, the mechanism is the change in the occupancy of deep electron traps caused by the illumination. These traps are located in the silicon in a small volume around the bonded interface with energies close to the center of the band gap and with a peak concentration of about 1013 cm-3. Impurities present on the silicon surfaces before bonding and impurities gettered to the bonded interface are possible reasons for the increased concentration of deep electron traps in the vicinity of the bonded interface.

  1. Lithium counterdoped silicon solar cell

    NASA Technical Reports Server (NTRS)

    Weinberg, I. (Inventor); Brandhorst, H. W., Jr. (Inventor)

    1986-01-01

    The resistance to radiation damage of an n(+)p boron doped silicon solar cell is improved by lithium counterdoping. Even though lithium is an n-dopant in silicon, the lithium is introduced in small enough quantities so that the cell base remains p-type. The lithium is introduced into the solar cell wafer by implantation of lithium ions whose energy is about 50 keV. After this lithium implantation, the wafer is annealed in a nitrogen atmosphere at 375 C for two hours.

  2. Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography.

    PubMed

    Dehzangi, Arash; Abdullah, A Makarimi; Larki, Farhad; Hutagalung, Sabar D; Saion, Elias B; Hamidon, Mohd N; Hassan, Jumiah; Gharayebi, Yadollah

    2012-01-01

    The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed and optimized in the present work compared to our previous works. The output, transfer characteristics and drain conductance of both structures were compared. The trend for both devices found to be the same but differences in subthreshold swing, 'on/off' ratio, and threshold voltage were observed. The devices are 'on' state when performing as the pinch off devices. The positive gate voltage shows pinch off effect, while the negative gate voltage was unable to make a significant effect on drain current. The charge transmission in devices is also investigated in simple model according to a junctionless transistor principal. PMID:22781031

  3. Effect of p-type multi-walled carbon nanotubes for improving hydrogen storage behaviors

    SciTech Connect

    Lee, Seul-Yi; Yop Rhee, Kyong; Nahm, Seung-Hoon; Park, Soo-Jin

    2014-02-15

    In this study, the hydrogen storage behaviors of p-type multi-walled carbon nanotubes (MWNTs) were investigated through the surface modification of MWNTs by immersing them in sulfuric acid (H{sub 2}SO{sub 4}) and hydrogen peroxide (H{sub 2}O{sub 2}) at various ratios. The presence of acceptor-functional groups on the p-type MWNT surfaces was confirmed by X-ray photoelectron spectroscopy. Measurement of the zeta-potential determined the surface charge transfer and dispersion of the p-type MWMTs, and the hydrogen storage capacity was evaluated at 77 K and 1 bar. From the results obtained, it was found that acceptor-functional groups were introduced onto the MWNT surfaces, and the dispersion of MWNTs could be improved depending on the acid-mixed treatment conditions. The hydrogen storage was increased by acid-mixed treatments of up to 0.36 wt% in the p-type MWNTs, compared with 0.18 wt% in the As-received MWNTs. Consequently, the hydrogen storage capacities were greatly influenced by the acceptor-functional groups of p-type MWNT surfaces, resulting in increased electron acceptor–donor interaction at the interfaces. - Graphical abstract: Hydrogen storage behaviors of the p-type MWNTs with the acid-mixed treatments are described. Display Omitted Display Omitted.

  4. Convergence of valence bands for high thermoelectric performance for p-type InN

    NASA Astrophysics Data System (ADS)

    Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

    2015-12-01

    Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of ZeT is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

  5. [Biological function of some elements and their compounds. IV. Silicon, silicon acids, silicones].

    PubMed

    Puzanowska-Tarasiewicz, Helena; Kuźmicka, Ludmiła; Tarasiewicz, Mirosław

    2009-11-01

    The review is devoted for the occurance, meaning of silicon and their compounds, especially silicon acids and silicones. Silicon participates in biosynthesis of collagen, the basic component of connective tissue. It strengthens and makes the walls of blood vessels more flexible, diminishes capillaries permeability, accelerates healing processes, has a sebostatic activity, strengthens hair and nails. This element has a beneficial effect on phosphorylation of proteins saccharides, and nucleotides. It is also essential for the formation of cytoskeleton and other cellular structures of mechanical or supportive function. Silicon is an initial substrate for obtaining silicones. These are synthetic polymers, in which silicon atoms are bound by oxygen bridges. They are used in almost all kinds of products due to their most convenient physical and chemical properties: moistening and film-forming, giving liquid form increasing solubility. Silicon acids form colloid gel, silica gel, with absorptive abilities, like active carbon. PMID:19999810

  6. Silicon radiation detectors with oxide charge state compensation

    SciTech Connect

    Walton, J.T.; Goulding, F.S.

    1986-10-01

    This paper discusses the use of boron implantation on high resistivity P-type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P-type silicon produces an inversion layer which causes high leakage currents on N/sup +/P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N/sup +/P junctions with very low leakage currents and with low surface conductance.

  7. Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation

    NASA Technical Reports Server (NTRS)

    Oguzman, Ismail H.; Wang, Yang; Kolnik, Jan; Brennan, Kevin F.

    1995-01-01

    In this paper, calculations of the hole initiated interband impact ionization rate in bulk silicon and GaAs are presented based on an ensemble Monte Carlo simulation with the inclusion of a wave-vector-dependent numerical transition rate formulation. The ionization transition rate is determined for each of the three valence bands, heavy, light, and split-off, using Fermi's golden rule with a two-body, screened Coulomb interaction. The dielectric function used within the calculation is assumed to be wave-vector-dependent. Calculations of the field-dependent impact ionization rate as well as the quantum yield are presented. It is found from both the quantum yield results and examination of the hole distribution function that the effective threshold energy for hole initiated impact ionization is relatively soft, similar to that predicted for the corresponding electron initiated ionization events occur more frequently than either heavy or split-offf initiated ionization events in bulk silicon over the applied electric field strengths examined here, 250-500 kV/cm. Conversely,in GaAs, the vast majority of hole initated ionization events originate from holes within the split-off band.

  8. Cholinergic synaptic vesicles contain a V-type and a P-type ATPase.

    PubMed

    Yamagata, S K; Parsons, S M

    1989-11-01

    Fifty to eighty-five percent of the ATPase activity in different preparations of cholinergic synaptic vesicles isolated from Torpedo electric organ was half-inhibited by 7 microM vanadate. This activity is due to a recently purified phosphointermediate, or P-type, ATPase, Acetylcholine (ACh) active transport by the vesicles was stimulated about 35% by vanadate, demonstrating that the P-type enzyme is not the proton pump responsible for ACh active transport. Nearly all of the vesicle ATPase activity was inhibited by N-ethylmaleimide. The P-type ATPase could be protected from N-ethylmaleimide inactivation by vanadate, and subsequently reactivated by complexation of vanadate with deferoxamine. The inactivation-protection pattern suggests the presence of a vanadate-insensitive, N-ethylmaleimide-sensitive ATPase consistent with a vacuolar, or V-type, activity expected to drive ACh active transport. ACh active transport was half-inhibited by 5 microM N-ethylmaleimide, even in the presence of vanadate. The presence of a V-type ATPase was confirmed by Western blots using antisera raised against three separate subunits of chromaffin granule vacuolar ATPase I. Both ATPase activities, the P-type polypeptides, and the 38-kilodalton polypeptide of the V-type ATPase precisely copurify with the synaptic vesicles. Solubilization of synaptic vesicles in octaethyleneglycol dodecyl ether detergent results in several-fold stimulation of the P-type activity and inactivation of the V-type activity, thus explaining why the V-type activity was not detected previously during purification of the P-type ATPase. It is concluded that cholinergic vesicles contain a P-type ATPase of unknown function and a V-type ATPase which is the proton pump. PMID:2552014

  9. Silicon production process evaluations

    NASA Technical Reports Server (NTRS)

    1982-01-01

    Engineering design of the third distillation column in the process was accomplished. The initial design is based on a 94.35% recovery of dichlorosilane in the distillate and a 99.9% recovery of trichlorosilane in the bottoms. The specified separation is achieved at a reflux ratio of 15 with 20 trays (equilibrium stages). Additional specifications and results are reported including equipment size, temperatures and pressure. Specific raw material requirements necessary to produce the silicon in the process are presented. The primary raw materials include metallurgical grade silicon, silicon tetrachloride, hydrogen, copper (catalyst) and lime (waste treatment). Hydrogen chloride is produced as by product in the silicon deposition. Cost analysis of the process was initiated during this reporting period.

  10. Amorphous silicon/polycrystalline thin film solar cells

    SciTech Connect

    Ullal, H.S.

    1991-03-13

    An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

  11. Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

    SciTech Connect

    Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

    2006-09-21

    Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

  12. Fabrication and Characterization of Rapidly Oxidized p-Type Cu2O Films from Cu Films and their Application to Heterojunction Thin-Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Kim, Hyung Soo; Lim, Jung Wook; Yun, Sun Jin; Park, Min A.; Park, Se Yong; Lee, Seong Eui; Lee, Hee Chul

    2013-10-01

    In this study, we report that the metal Cu deposited on a glass substrate is formed into a stable p-type Cu2O film with excellent properties through rapid thermal oxidation (RTO). The pre-deposited Cu film layer went through thermal oxidation in the temperature range of 200-500 °C in O2 and air ambient, and the electrical and optical properties were intensively investigated. The optimized p-type Cu2O film heat-treated at a temperature of 200 °C in an air ambient has a carrier concentration of 1.25×1017 cm-3, mobility of 0.51 cm2 V-1 s-1, and resistivity of 9.86 Ω cm; its optical band gap reaches about 2.4 eV. Using the p-type Cu2O film with i- and n-type amorphous silicon layers, heterojunction thin-film solar cells were fabricated on glass substrates. These transparent solar cells employed Ga-doped ZnO films as top and bottom electrodes. Solar cells with Cu2O film oxidized at 200 °C in an air ambient have an open circuit voltage of 0.36 V, short-circuit current of 15.2 mA/cm2, and photoelectric conversion efficiency of 1.98%.

  13. Improvement in thermoelectric power factor of mechanically alloyed p-type SiGe by incorporation of TiB2

    NASA Astrophysics Data System (ADS)

    Ahmad, Sajid; Dubey, K.; Bhattacharya, Shovit; Basu, Ranita; Bhatt, Ranu; Bohra, A. K.; Singh, Ajay; Aswal, D. K.; Gupta, S. K.

    2016-05-01

    Nearly 60% of the world's useful energy is wasted as heat and recovering a fraction of this waste heat by converting it as useful electrical power is an important area of research[1]. Thermoelectric power generators (TEG) are solid state devices which converts heat into electricity. TEG consists of n and p-type thermoelements connected electrically in series and thermally in parallel[2]. Silicon germanium (SiGe) alloy is one of the conventional high temperature thermoelectric materials and is being used in radio-isotopes based thermoelectric power generators for deep space exploration programs.Temperature (T) dependence of thermoelectric (TE) properties of p-type SiGe and p-type SiGe-x wt.%TiB2 (x=6,8,10%) nanocomposite materials has been studied with in the temperature range of 300 K to 1100 K. It is observed that there is an improvement in the power factor (α2/ρ) of SiGe alloy on addition of TiB2 upto 8 wt.% that is mainly due to increase in the Seebeck coefficient (α) and electrical conductivity (σ) of the alloy.

  14. PATBox: A Toolbox for Classification and Analysis of P-Type ATPases

    PubMed Central

    Søndergaard, Dan; Pedersen, Christian Nørgaard Storm

    2015-01-01

    P-Type ATPases are part of the regulatory system of the cell where they are responsible for transporting ions and lipids through the cell membrane. These pumps are found in all eukaryotes and their malfunction has been found to cause several severe diseases. Knowing which substrate is pumped by a certain P-Type ATPase is therefore vital. The P-Type ATPases can be divided into 11 subtypes based on their specificity, that is, the substrate that they pump. Determining the subtype experimentally is time-consuming. Thus it is of great interest to be able to accurately predict the subtype based on the amino acid sequence only. We present an approach to P-Type ATPase sequence classification based on the k-nearest neighbors, similar to a homology search, and show that this method provides performs very well and, to the best of our knowledge, better than any existing method despite its simplicity. The classifier is made available as a web service at http://services.birc.au.dk/patbox/ which also provides access to a database of potential P-Type ATPases and their predicted subtypes. PMID:26422234

  15. Chemical-free n-type and p-type multilayer-graphene transistors

    NASA Astrophysics Data System (ADS)

    Dissanayake, D. M. N. M.; Eisaman, M. D.

    2016-08-01

    A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

  16. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    PubMed

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented. PMID:26879813

  17. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    PubMed

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  18. MD Simulations of P-Type ATPases in a Lipid Bilayer System.

    PubMed

    Autzen, Henriette Elisabeth; Musgaard, Maria

    2016-01-01

    Molecular dynamics (MD) simulation is a computational method which provides insight on protein dynamics with high resolution in both space and time, in contrast to many experimental techniques. MD simulations can be used as a stand-alone method to study P-type ATPases as well as a complementary method aiding experimental studies. In particular, MD simulations have proved valuable in generating and confirming hypotheses relating to the structure and function of P-type ATPases. In the following, we describe a detailed practical procedure on how to set up and run a MD simulation of a P-type ATPase embedded in a lipid bilayer using software free of use for academics. We emphasize general considerations and problems typically encountered when setting up simulations. While full coverage of all possible procedures is beyond the scope of this chapter, we have chosen to illustrate the MD procedure with the Nanoscale Molecular Dynamics (NAMD) and the Visual Molecular Dynamics (VMD) software suites.

  19. Identification and design principles of low hole effective mass p-type transparent conducting oxides

    PubMed Central

    Hautier, Geoffroy; Miglio, Anna; Ceder, Gerbrand; Rignanese, Gian-Marco; Gonze, Xavier

    2013-01-01

    The development of high-performance transparent conducting oxides is critical to many technologies from transparent electronics to solar cells. Whereas n-type transparent conducting oxides are present in many devices, their p-type counterparts are not largely commercialized, as they exhibit much lower carrier mobilities due to the large hole effective masses of most oxides. Here we conduct a high-throughput computational search on thousands of binary and ternary oxides and identify several highly promising compounds displaying exceptionally low hole effective masses (up to an order of magnitude lower than state-of-the-art p-type transparent conducting oxides), as well as wide band gaps. In addition to the discovery of specific compounds, the chemical rationalization of our findings opens new directions, beyond current Cu-based chemistries, for the design and development of future p-type transparent conducting oxides. PMID:23939205

  20. High performance P-type thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Caillat, Thierry (Inventor); Borshchevsky, Alexander (Inventor); Fleurial, Jean-Pierre (Inventor)

    2002-01-01

    The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein 0.ltoreq.x.ltoreq.4, A is a transition metal, B is a pnicogen, and 0.ltoreq.y.ltoreq.3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn.sub.4 Sb.sub.3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

  1. The algorithm for the piezoresistance coefficients of p-type polysilicon

    NASA Astrophysics Data System (ADS)

    Jian, Wang; Rongyan, Chuai

    2016-08-01

    In order to improve the piezoresistance theory of polysilicon, based on the tunneling piezoresistance model, using the mechanisms of approximate valence band equation and shifts of the hole transfer and hole conduction mass by stress, a novel algorithm for the piezoresistance coefficients of p-type polysilicon is presented. It proposes three fundamental piezoresistance coefficients π11, π12 and π44 of the grain neutral and grain boundary regions, separately. With those piezoresistance coefficients, the gauge factors of the p-type polysilicon nanofilm and the p-type common polysilicon film are calculated, and then the plots of the gauge factor as a function of doping concentration are given, which are consistent with the experimental results. Project supported by the National Natural Science Foundation of China (No. 61372019).

  2. Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

    NASA Astrophysics Data System (ADS)

    Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2015-10-01

    We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

  3. Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

    PubMed Central

    2011-01-01

    This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements and local current measurements performed with conductive AFM. The characteristics of the contacts were significantly affected by the roughness of the underlying SiC. In particular, the surface roughness of the Al-implanted SiC regions annealed at 1700°C could be strongly reduced using a protective carbon capping layer during annealing. This latter resulted in an improved surface morphology and specific contact resistance of the Ti/Al ohmic contacts formed on these regions. The microstructure of the contacts was monitored by X-ray diffraction analysis and a cross-sectional transmission electron microscopy, and correlated with the electrical results. PMID:21711667

  4. Electrical and optical properties of p-type InN

    SciTech Connect

    Mayer, Marie A.; Choi, Soojeong; Bierwagen, Oliver; Smith, Holland M.; Haller, Eugene E.; Speck, James S.; Walukiewicz, Wladek

    2011-01-01

    We have performed comprehensive studies of optical, thermoelectric and electrical properties of Mg doped InN with varying Mg doping levels and sample thicknesses. Room temperature photoluminescence spectra show a Mg acceptor related emission and the thermopower provides clear evidence for the presence of mobile holes. Although the effects of the hole transport are clearly observed in the temperature dependent electrical properties, the sign of the apparent Hall coefficient remains negative in all samples. We show that the standard model of two electrically well connected layers (n-type surface electron accumulation and p-type bulk) does not properly describe Hall effect in p-type InN.

  5. Carrier removal and defect behavior in p-type InP

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  6. Indentation plasticity and fracture in silicon

    NASA Technical Reports Server (NTRS)

    Rybicki, George C.; Pirouz, P.

    1988-01-01

    Measurements of the ductile-brittle transition temperature of heavily doped silicon were carried out using indentation techniques. Diamond pyramid hardness tests were performed on the (100) face of heavily doped N-type and P-type and intrinsic silicon single crystals. Tests were performed over the range 200 C to 850 C and loads of 100 to 500 g were used. Samples were subsequently etched to reveal dislocation rosettes produced by indentation. Intrinsic silicon underwent a ductile-brittle transition at 660 C, P-type at 645 C and N-type at 625 C. Hardness values varied from 1.1 GPa at 700 C to 11.7 GPa at 200 C. Significant effects of hardness on doping were present only at the highest temperatures. Lower loads generally produced higher hardness but load did not affect the Ductile-Brittle Transition Temperature (DBTT). Fracture toughness values ranged from 0.9 MPa m(1/2) at 200 C to 2.75 MPa m(1/2) near the DBTT. Doping did not affect the fracture toughness of silicon. P-type doping increased the size of dislocation rosettes observed after indentation, but N-type did not, in contradiction of the expected results. Results are discussed in terms of the effect of doping on the dislocation mobility in silicon.

  7. A structural and functional perspective of DyP-type peroxidase family.

    PubMed

    Yoshida, Toru; Sugano, Yasushi

    2015-05-15

    Dye-decolorizing peroxidase from the basidiomycete Bjerkandera adusta Dec 1 (DyP) is a heme peroxidase. This name reflects its ability to degrade several anthraquinone dyes. The substrate specificity, the amino acid sequence, and the tertiary structure of DyP are different from those of the other heme peroxidase (super)families. Therefore, many proteins showing the similar amino acid sequences to that of DyP are called DyP-type peroxidase which is a new family of heme peroxidase identified in 2007. In fact, all structures of this family show a similar structure fold. However, this family includes many proteins whose amino acid sequence identity to DyP is lower than 15% and/or whose catalytic efficiency (kcat/Km) is a few orders of magnitude less than that of DyP. A protein showing an activity different from peroxidase activity (dechelatase activity) has been also reported. In addition, the precise physiological roles of DyP-type peroxidases are unknown. These facts raise a question of whether calling this family DyP-type peroxidase is suitable. Here, we review the differences and similarities of structure and function among this family and propose the reasonable new classification of DyP-type peroxidase family, that is, class P, I and V. In this contribution, we discuss the adequacy of this family name.

  8. P-type ATPase superfamily: evidence for critical roles for kingdom evolution.

    PubMed

    Okamura, Hideyuki; Denawa, Masatsugu; Ohniwa, Ryosuke; Takeyasu, Kunio

    2003-04-01

    The P-type ATPase has become a protein superfamily. On the basis of sequence similarities, the phylogenetic analyses, and substrate specificities, this superfamily can be classified into 5 families and 11 subfamilies. A comparative phylogenetic analysis demonstrates the relationship between the molecular evolution of these subfamilies and the establishment of the kingdoms of living things. PMID:12763799

  9. p -type Bi2Se3 for topological insulator and low-temperature thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Hor, Y. S.; Richardella, A.; Roushan, P.; Xia, Y.; Checkelsky, J. G.; Yazdani, A.; Hasan, M. Z.; Ong, N. P.; Cava, R. J.

    2009-05-01

    The growth and elementary properties of p -type Bi2Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2Se3 , the p -type behavior has been induced through low-level substitutions (1% or less) of Ca for Bi. Scanning tunneling microscopy is employed to image the defects and establish their charge. Tunneling and angle-resolved photoemission spectra show that the Fermi level has been lowered into the valence band by about 400 meV in Bi1.98Ca0.02Se3 relative to the n -type material. p -type single crystals with ab -plane Seebeck coefficients of +180μV/K at room temperature are reported. These crystals show an anomalous peak in the Seebeck coefficient at low temperatures, reaching +120μVK-1 at 7 K, giving them a high thermoelectric power factor at low temperatures. In addition to its interesting thermoelectric properties, p -type Bi2Se3 is of substantial interest for studies of technologies and phenomena proposed for topological insulators.

  10. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOEpatents

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  11. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    DOEpatents

    Hogan, Stephen J.

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  12. Optical Properties of p-type ZnO Doped by As Ion Implantation

    SciTech Connect

    Jeong, T.S.; Youn, C.J.; Han, M.S.; Park, Y. S.; Lee, W.S.

    2005-06-30

    As-doped p-type ZnO has been achieved by ion implantation. The As-related optical properties were analyzed by using secondary ion mass spectrometry, the Raman scattering, and the photoluminescence experiments. From the I-V measurement, the behavior of rectifying on these samples is confirmed.

  13. Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

    NASA Technical Reports Server (NTRS)

    Robertson, J. B.; Littlejohn, M. A.

    1974-01-01

    The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  14. The p-type conduction mechanism in Cu2O: a first principles study.

    PubMed

    Nolan, Michael; Elliott, Simon D

    2006-12-01

    Materials based on Cu2O are potential p-type transparent semiconducting oxides. Developing an understanding of the mechanism leading to p-type behaviour is important. An accepted origin is the formation of Cu vacancies. However, the way in which this mechanism leads to p-type properties needs to be investigated. This paper presents a first principles analysis of the origin of p-type semiconducting behaviour in Cu2O with 1.5 and 3% Cu vacancy concentrations. Plane wave density functional theory (DFT) with the Perdew-Burke Ernzerhof (PBE) exchange-correlation functional is applied. In order to investigate the applicability of DFT, we firstly show that CuO, with 50% Cu vacancies cannot be described with DFT and in order to obtain a consistent description of CuO, the DFT + U approach is applied. The resulting electronic structure is consistent with experiment, with a spin moment of 0.64 mu(B) and an indirect band gap of 1.48 eV for U = 7 eV. However, for a 3% Cu vacancy concentration in Cu2O, the DFT and DFT + U descriptions of Cu vacancies are similar, indicating that DFT is suitable for a small concentration of Cu vacancies; the formation energy of a Cu vacancy is no larger than 1.7 eV. Formation of Cu vacancies produces delocalised hole states with hole effective masses consistent with the semiconducting nature of Cu2O. These results demonstrate that the p-type semiconducting properties observed for Cu2O are explained by a small concentration of Cu vacancies. PMID:19810413

  15. Lithium-ion drifting: Application to the study of point defects in floating-zone silicon

    NASA Technical Reports Server (NTRS)

    Walton, J. T.; Wong, Y. K.; Zulehner, W.

    1997-01-01

    The use of lithium-ion (Li(+)) drifting to study the properties of point defects in p-type Floating-Zone (FZ) silicon crystals is reported. The Li(+) drift technique is used to detect the presence of vacancy-related defects (D defects) in certain p-type FZ silicon crystals. SUPREM-IV modeling suggests that the silicon point defect diffusivities are considerably higher than those commonly accepted, but are in reasonable agreement with values recently proposed. These results demonstrate the utility of Li(+) drifting in the study of silicon point defect properties in p-type FZ crystals. Finally, a straightforward measurement of the Li(+) compensation depth is shown to yield estimates of the vacancy-related defect concentration in p-type FZ crystals.

  16. Ternary chalcogenides Cs2Zn3Se4 and Cs2Zn3Te4 : Potential p -type transparent conducting materials

    DOE PAGESBeta

    Shi, Hongliang; Saparov, Bayrammurad; Singh, David J.; Sefat, Athena S.; Du, Mao-Hua

    2014-11-11

    Here we report prediction of two new ternary chalcogenides that can potentially be used as p-type transparent conductors along with experimental synthesis and initial characterization of these previously unknown compounds, Cs2Zn3Ch4 (Ch = Se, Te). In particular, the structures are predicted based on density functional calculations and confirmed by experiments. Phase diagrams, electronic structure, optical properties, and defect properties of Cs2Zn3Se4 and Cs2Zn3Te4 are calculated to assess the viability of these materials as p-type TCMs. Cs2Zn3Se4 and Cs2Zn3Te4, which are stable under ambient air, display large optical band gaps (calculated to be 3.61 and 2.83 eV, respectively) and have smallmore » hole effective masses (0.5-0.77 me) that compare favorably with other proposed p-type TCMs. Defect calculations show that undoped Cs2Zn3Se4 and Cs2Zn3Te4 are p-type materials. However, the free hole concentration may be limited by low-energy native donor defects, e.g., Zn interstitials. Lastly, non-equilibrium growth techniques should be useful for suppressing the formation of native donor defects, thereby increasing the hole concentration.« less

  17. Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

    NASA Technical Reports Server (NTRS)

    1979-01-01

    The results for Task 3 of the Low Cost Solar Array Project are presented. Task 3 is directed toward the development of a cost effective encapsulating system for photovoltaic modules using silicon based materials. The technical approach of the contract effort is divided into four special tasks: (1) technology review; (2) generation of concepts for screening and processing silicon encapsulation systems; (3) assessment of encapsulation concepts; and (4) evaluation of encapsulation concepts. The candidate silicon materials are reviewed. The silicon and modified silicon resins were chosen on the basis of similarity to materials with known weatherability, cost, initial tangential modulus, accelerated dirt pick-up test results and the ratio of the content of organic phenyl substitution of methyl substitution on the backbone of the silicon resin.

  18. Perspectives of High-Temperature Thermoelectric Applications and p-type and n-type Aluminoborides

    NASA Astrophysics Data System (ADS)

    Mori, T.

    2016-08-01

    A need exists to develop high-temperature thermoelectric materials which can utilize high-temperature unutilized/waste heat in thermal power plants, steelworks, factories, incinerators, etc., and also focused solar power. The thermal power plant topping application is of potential high impact since it can sizably increase the efficiency of power plants which are the major supply of electrical power for many countries. Higher borides are possible candidates for their particular high-temperature stability, generally large Seebeck coefficients, α, and intrinsic low thermal conductivity. Excellent (|α| > 200 μV/K) p-type or n-type behavior was recently achieved in the aluminoboride YAl x B14 by varying the occupancy of Al sites, x. Finding p-type and n-type counterparts has long been a difficulty of thermoelectric research not limited to borides. This paper reviews possible high-temperature thermoelectric applications, and recent developments and perspectives of thermoelectric aluminoborides.

  19. Direct observation of proton pumping by a eukaryotic P-type ATPase.

    PubMed

    Veshaguri, Salome; Christensen, Sune M; Kemmer, Gerdi C; Ghale, Garima; Møller, Mads P; Lohr, Christina; Christensen, Andreas L; Justesen, Bo H; Jørgensen, Ida L; Schiller, Jürgen; Hatzakis, Nikos S; Grabe, Michael; Pomorski, Thomas Günther; Stamou, Dimitrios

    2016-03-25

    In eukaryotes, P-type adenosine triphosphatases (ATPases) generate the plasma membrane potential and drive secondary transport systems; however, despite their importance, their regulation remains poorly understood. We monitored at the single-molecule level the activity of the prototypic proton-pumping P-type ATPase Arabidopsis thaliana isoform 2 (AHA2). Our measurements, combined with a physical nonequilibrium model of vesicle acidification, revealed that pumping is stochastically interrupted by long-lived (~100 seconds) inactive or leaky states. Allosteric regulation by pH gradients modulated the switch between these states but not the pumping or leakage rates. The autoinhibitory regulatory domain of AHA2 reduced the intrinsic pumping rates but increased the dwell time in the active pumping state. We anticipate that similar functional dynamics underlie the operation and regulation of many other active transporters.

  20. CALCULATING THE HABITABLE ZONE OF BINARY STAR SYSTEMS. II. P-TYPE BINARIES

    SciTech Connect

    Haghighipour, Nader; Kaltenegger, Lisa

    2013-11-10

    We have developed a comprehensive methodology for calculating the circumbinary habitable zone (HZ) in planet-hosting P-type binary star systems. We present a general formalism for determining the contribution of each star of the binary to the total flux received at the top of the atmosphere of an Earth-like planet and use the Sun's HZ to calculate the inner and outer boundaries of the HZ around a binary star system. We apply our calculations to the Kepler's currently known circumbinary planetary systems and show the combined stellar flux that determines the boundaries of their HZs. We also show that the HZ in P-type systems is dynamic and, depending on the luminosity of the binary stars, their spectral types, and the binary eccentricity, its boundaries vary as the stars of the binary undergo their orbital motion. We present the details of our calculations and discuss the implications of the results.

  1. Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

    SciTech Connect

    Lyons, J. L.; Janotti, A.; Van de Walle, C. G.

    2014-01-07

    We examine how hole localization limits the effectiveness of substitutional acceptors in oxide and nitride semiconductors and explain why p-type doping of these materials has proven so difficult. Using hybrid density functional calculations, we find that anion-site substitutional impurities in AlN, GaN, InN, and ZnO lead to atomic-like states that localize on the impurity atom itself. Substitution with cation-site impurities, on the other hand, triggers the formation of polarons that become trapped on nearest-neighbor anions, generally leading to large ionization energies for these acceptors. Unlike shallow effective-mass acceptors, these two types of deep acceptors couple strongly with the lattice, significantly affecting the optical properties and severely limiting prospects for achieving p-type conductivity in these wide-band-gap materials.

  2. Detection of minority carrier traps in p-type 4H-SiC

    SciTech Connect

    Alfieri, G.; Kimoto, T.

    2014-03-03

    Contrarily to the case of n-type 4H-SiC, very little is known about the presence of minority carrier traps in p-type epilayers. In this study, we performed the electrical characterization of as-grown, electron irradiated, and thermally oxidized p-type 4H-SiC, by using minority carrier transient spectroscopy. Four minority carrier traps are reported in 1.6–2.3 eV energy range above the valence band edge (E{sub V}). Particular emphasis is given to the mid-gap minority carrier trap (EH{sub 6∕7}) and to its correlation to an energetically close mid-gap majority carrier trap (HK4)

  3. Perspectives of High-Temperature Thermoelectric Applications and p-type and n-type Aluminoborides

    NASA Astrophysics Data System (ADS)

    Mori, T.

    2016-10-01

    A need exists to develop high-temperature thermoelectric materials which can utilize high-temperature unutilized/waste heat in thermal power plants, steelworks, factories, incinerators, etc., and also focused solar power. The thermal power plant topping application is of potential high impact since it can sizably increase the efficiency of power plants which are the major supply of electrical power for many countries. Higher borides are possible candidates for their particular high-temperature stability, generally large Seebeck coefficients, α, and intrinsic low thermal conductivity. Excellent (|α| > 200 μV/K) p-type or n-type behavior was recently achieved in the aluminoboride YAl x B14 by varying the occupancy of Al sites, x. Finding p-type and n-type counterparts has long been a difficulty of thermoelectric research not limited to borides. This paper reviews possible high-temperature thermoelectric applications, and recent developments and perspectives of thermoelectric aluminoborides.

  4. Measurement of the dead layer thickness in a p-type point contact germanium detector

    NASA Astrophysics Data System (ADS)

    Jiang, Hao; Yue, Qian; Li, Yu-Lan; Kang, Ke-Jun; Li, Yuan-Jing; Li, Jin; Lin, Shin-Ted; Liu, Shu-Kui; Ma, Hao; Ma, Jing-Lu; Su, Jian; Tsz-King Wong, Henry; Yang, Li-Tao; Zhao, Wei; Zeng, Zhi

    2016-09-01

    A 994 g mass p-type PCGe detector has been deployed during the first phase of the China Dark matter EXperiment, aiming at direct searches for light weakly interacting massive particles. Measuring the thickness of the dead layer of a p-type germanium detector is an issue of major importance since it determines the fiducial mass of the detector. This work reports a method using an uncollimated 133Ba source to determine the dead layer thickness. The experimental design, data analysis and Monte Carlo simulation processes, as well as the statistical and systematic uncertainties are described. A dead layer thickness of 1.02 mm was obtained based on a comparison between the experimental data and the simulated results. Supported by National Natural Science Foundation of China (10935005, 10945002, 11275107, 11175099)

  5. Direct observation of proton pumping by a eukaryotic P-type ATPase.

    PubMed

    Veshaguri, Salome; Christensen, Sune M; Kemmer, Gerdi C; Ghale, Garima; Møller, Mads P; Lohr, Christina; Christensen, Andreas L; Justesen, Bo H; Jørgensen, Ida L; Schiller, Jürgen; Hatzakis, Nikos S; Grabe, Michael; Pomorski, Thomas Günther; Stamou, Dimitrios

    2016-03-25

    In eukaryotes, P-type adenosine triphosphatases (ATPases) generate the plasma membrane potential and drive secondary transport systems; however, despite their importance, their regulation remains poorly understood. We monitored at the single-molecule level the activity of the prototypic proton-pumping P-type ATPase Arabidopsis thaliana isoform 2 (AHA2). Our measurements, combined with a physical nonequilibrium model of vesicle acidification, revealed that pumping is stochastically interrupted by long-lived (~100 seconds) inactive or leaky states. Allosteric regulation by pH gradients modulated the switch between these states but not the pumping or leakage rates. The autoinhibitory regulatory domain of AHA2 reduced the intrinsic pumping rates but increased the dwell time in the active pumping state. We anticipate that similar functional dynamics underlie the operation and regulation of many other active transporters. PMID:27013734

  6. p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

    SciTech Connect

    Wang, Ming-Zheng; Xie, Wei-Jie; Hu, Han; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Luo, Lin-Bao

    2013-11-18

    Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm{sup 2}V{sup −1}s{sup −1} and a hole concentration of 1.67 × 10{sup 17} cm{sup −3}, respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application.

  7. High temperature terahertz response in a p-type quantum dot-in-well photodetector

    SciTech Connect

    Wolde, Seyoum; Lao, Yan-Feng; Unil Perera, A. G.; Zhang, Y. H.; Wang, T. M.; Kim, J. O.; Schuler-Sandy, Ted; Tian, Zhao-Bing; Krishna, S.

    2014-10-13

    Terahertz (THz) response observed in a p-type InAs/In{sub 0.15}Ga{sub 0.85}As/GaAs quantum dots-in-a-well (DWELL) photodetector is reported. This detector displays expected mid-infrared response (from ∼3 to ∼10 μm) at temperatures below ∼100 K, while strong THz responses up to ∼4.28 THz is observed at higher temperatures (∼100–130 K). Responsivity and specific detectivity at 9.2 THz (32.6 μm) under applied bias of −0.4 V at 130 K are ∼0.3 mA/W and ∼1.4 × 10{sup 6} Jones, respectively. Our results demonstrate the potential use of p-type DWELL in developing high operating temperature THz devices.

  8. Electronic Structure and Doping of P-Type Transparent Conducting Oxides: Preprint

    SciTech Connect

    Wei, S.-H.; Nie, X.; Zhang, S. B.

    2002-05-01

    Transparent conducting oxides (TCOs) are a group of materials that are widely used in solar cells and other optoelectronic devices. Recently, Cu-containing p-type TCOs such as MII Cu2 O2 (MIII=Mg, Ca, Sr, Ba) and CuMIII O2 (MIII=Al, Ga, In) have been proposed. Using first-principles band structure methods, we have systematically studied the electronic and optical properties of these p-type transparent oxides. For MII Cu2 O2 , we predict that adding a small amount of Ca into Sr Cu2 O2 can increase the transparency and conductivity. For CuMIII O2 , we explained the doping and band gap anomalies in this system and proposed a new approach to search for bipolar dopable wide-gap materials.

  9. Ultra-thin ohmic contacts for p-type nitride light emitting devices

    DOEpatents

    Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

    2014-06-24

    A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

  10. Passivation of silicon surfaces by heat treatment in liquid water at 110 °C

    NASA Astrophysics Data System (ADS)

    Nakamura, Tomohiko; Sameshima, Toshiyuki; Hasumi, Masahiko; Mizuno, Tomohisa

    2015-10-01

    We report the effective passivation of silicon surfaces by heating single-crystalline silicon substrates in liquid water at 110 °C for 1 h. High photo-induced effective minority carrier lifetimes τeff were obtained ranging from 8.3 × 10-4 to 3.1 × 10-3 s and from 1.2 × 10-4 to 6.0 × 10-4 s for the n- and p-type samples, respectively, under 635 nm light illumination, while the τeff values of the initial bare samples were lower than 1.2 × 10-5 s. The heat treatment in liquid water at 110 °C for 1 h resulted in low surface recombination velocities ranging from 7 to 34 cm/s and from 49 to 250 cm/s for the n- and p-type samples, respectively. The photo-conductivity of the n-type sample was increased from 3.8 × 10-3 (initial) to 1.4 × 10-1 S/cm by the present heat treatment under air-mass (AM) 1.5 light illumination at 100 mW/cm2. The thickness of the passivation layer was estimated to be only approximately 0.7 nm. Metal-insulator-semiconductor-type solar cells were demonstrated with Al and Au metal formation on the passivated surface. Rectified current voltage and solar cell characteristics were observed. The open circuit voltages were obtained to be 0.52 and 0.49 V under AM 1.5 light illumination at 100 mW/cm2 for the n- and p-type samples, respectively.

  11. Metal electrode integration on macroporous silicon: pore distribution and morphology

    PubMed Central

    2012-01-01

    In this work, a new approach for the one-step integration of interdigitated electrodes on macroporous silicon substrates is presented. Titanium/gold interdigitated electrodes are used to pattern p-type silicon substrates prior the anodization in an organic electrolyte. The electrolyte characteristics, conductivity, and pH have been found to affect the adherence of the metal layer on the silicon surface during the electrochemical etching. The impact of the metal pattern on size distribution and morphology of the resulting macroporous silicon layer is analyzed. A formation mechanism supported by finite element simulation is proposed. PMID:22799456

  12. Low-temperature solution-processed p-type vanadium oxide for perovskite solar cells.

    PubMed

    Sun, Haocheng; Hou, Xiaomeng; Wei, Qiulong; Liu, Huawei; Yang, Kecheng; Wang, Wei; An, Qinyou; Rong, Yaoguang

    2016-06-21

    A low-temperature solution-processed inorganic p-type contact material of vanadium oxide (VOx) was developed to fabricate planar-heterojunction perovskite solar cells. Using a solvent-assisted process, high-quality uniform and compact perovskite (CH3NH3PbI3) films were deposited on VOx coated substrates. Due to the high transmittance and quenching efficiency of VOx layers, a power conversion efficiency of over 14% was achieved.

  13. Method for producing high carrier concentration p-Type transparent conducting oxides

    DOEpatents

    Li, Xiaonan; Yan, Yanfa; Coutts, Timothy J.; Gessert, Timothy A.; Dehart, Clay M.

    2009-04-14

    A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

  14. Interfacial energy level bending in a crystalline p/p-type organic heterostructure

    SciTech Connect

    Zhu Feng; Grobosch, Mandy; Treske, Uwe; Knupfer, Martin; Huang Lizhen; Ji Shiliang; Yan Donghang

    2011-05-16

    A conduction channel was observed at the heterointerface of the crystalline p-type organic films copper phthalocyanine (CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T). Energy level bending at the interface is confirmed by photoemission spectroscopy, which verifies a charge transfer between CuPc and BP2T. This provides a further route to utilize interfacial electronic properties in functional devices and also documents the importance of reconsidering the interfacial electronic structure of organic heterostructures.

  15. Efficient p-type dye-sensitized solar cells based on disulfide/thiolate electrolytes

    NASA Astrophysics Data System (ADS)

    Xu, Xiaobao; Zhang, Bingyan; Cui, Jin; Xiong, Dehua; Shen, Yan; Chen, Wei; Sun, Licheng; Cheng, Yibing; Wang, Mingkui

    2013-08-01

    Herein, an organic redox couple 1-methy-1H-tetrazole-5-thiolate (T-) and its disulfide dimer (T2) redox shuttle, as an electrolyte, is introduced in a p-type dye-sensitized solar cell (DSC) on the basis of an organic dye (P1) sensitizer and nanocrystal CuCrO2 electrode. Using this iodide-free transparent redox electrolyte in conjunction with the sensitized heterojunction, we achieve a high open-circuit voltage of over 300 mV. An optimal efficiency of 0.23% is obtained using a CoS counter electrode and an optimized electrolyte composition under AM 1.5 G 100 mW cm-2 light illumination which, to the best of our knowledge, represents the highest efficiency that has so far been reported for p-type DSCs using organic redox couples.Herein, an organic redox couple 1-methy-1H-tetrazole-5-thiolate (T-) and its disulfide dimer (T2) redox shuttle, as an electrolyte, is introduced in a p-type dye-sensitized solar cell (DSC) on the basis of an organic dye (P1) sensitizer and nanocrystal CuCrO2 electrode. Using this iodide-free transparent redox electrolyte in conjunction with the sensitized heterojunction, we achieve a high open-circuit voltage of over 300 mV. An optimal efficiency of 0.23% is obtained using a CoS counter electrode and an optimized electrolyte composition under AM 1.5 G 100 mW cm-2 light illumination which, to the best of our knowledge, represents the highest efficiency that has so far been reported for p-type DSCs using organic redox couples. Electronic supplementary information (ESI) available: Optimization of electrolyte concentration and the solvent used in the experiment, and the effects of different redox couples and the counter electrode on the dark current. See DOI: 10.1039/c3nr02169f

  16. Tunable p-type conductivity and transport properties of AlN nanowires via Mg doping.

    PubMed

    Tang, Yong-Bing; Bo, Xiang-Hui; Xu, Jun; Cao, Yu-Lin; Chen, Zhen-Hua; Song, Hai-Sheng; Liu, Chao-Ping; Hung, Tak-Fu; Zhang, Wen-Jun; Cheng, Hui-Ming; Bello, Igor; Lee, Shuit-Tong; Lee, Chun-Sing

    2011-05-24

    Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp(2)Mg) vapor as a doping source by chemical vapor deposition. The Mg-doped AlN NWs are single-crystalline and grow along the [001] direction. Gate-voltage-dependent transport measurements on field-effect transistors constructed from individual NWs revealed the transition from n-type conductivity in the undoped AlN NWs to p-type conductivity in the Mg-doped NWs. By adjusting the doping gas flow rate (0-10 sccm), the conductivity of AlN NWs can be tuned over 7 orders of magnitude from (3.8-8.5) × 10(-6) Ω(-1) cm(-1) for the undoped sample to 15.6-24.4 Ω(-1) cm(-1) for the Mg-doped AlN NWs. Hole concentration as high as 4.7 × 10(19) cm(-3) was achieved for the heaviest doping. In addition, the maximum hole mobility (∼6.4 cm(2)/V s) in p-type AlN NWs is much higher than that of Mg-doped AlN films (∼1.0 cm(2)/V s). (2) The realization of p-type AlN NWs with tunable electrical transport properties may open great potential in developing practical nanodevices such as deep-UV light-emitting diodes and photodetectors. PMID:21480640

  17. WSe2 heterostructures with p-type multi-layer graphene contacts

    NASA Astrophysics Data System (ADS)

    Arefe, Ghidewon; Finney, Nathan; Seo, Dongjea; Kim, Young Duck; Chang, Damien; Cui, Xu; Kang, Kyung Nam; Jerng, Sahng-Kyoon; Chun, Seung Hyun; Yang, Eui-Hyeok; Hone, James

    Recent advances in 2D material research have opened up new opportunities to study fundamental physics and to imagine new applications for this advanced class of materials. 2D tungsten diselenide (WSe2) is a transition metal dichalcogenide (TMDC) semiconductor that is intrinsically p-type with great potential for advanced opto-electronic applications. WSe2 monolayers grown by CVD and highly p-doped PECVD multilayer graphene are used to construct 2D heterostructure p-type field effect transistors as a platform to study the potential for applications and novel physical phenomena. P-type graphene is being used to overcome the challenge of making good electrical contact to WSe2 that is Ohmic at low temperatures and to allow for the construction of an entirely 2D heterostructure. Electrical transport and novel optical effects will be studied in these WSe2 heterostructures that are fully encapsulated in hexagonal boron nitride (h-BN) in order to show greatly improved environmental stability and high mobility at low temperature due to the suppression of extrinsic scattering effects such as charge impurities, surface polar optical phonons, and absorbents from air.

  18. Computational design of p-type contacts for MoS2-based electronic devices

    NASA Astrophysics Data System (ADS)

    Kumar, Priyank; Musso, Tiziana; Foster, Adam; Grossman, Jeffrey

    2015-03-01

    The excellent physical and semiconducting properties of transition metal dichalcogenide (TMDC) monolayers make them promising materials for many applications. A well-known example is MoS2, which has gained significant attention as a channel material for next-generation transistors. While n-type MoS2 field-effect transistors (n-FETs) can be fabricated with relative ease, fabrication of p-FETs remains a challenge as the Fermi-level of elemental metals used as contacts are pinned close to the conduction band, leading to large p-type Schottky barrier heights (SBHs). Using ab initio computations, we design and propose efficient hole contacts utilizing high work function oxide-based hole injection materials, with the aim of advancing p-type MoS2 device technology. Our calculations will highlight the possibility to tune and lower the p-type SBH at the metal/semiconductor interface by controlling the structural properties of oxide materials. Taken together, our results provide an interesting platform for experimental design of next-generation MoS2-based electronic and optoelectronic devices.

  19. Demethoxycurcumin Is A Potent Inhibitor of P-Type ATPases from Diverse Kingdoms of Life.

    PubMed

    Dao, Trong Tuan; Sehgal, Pankaj; Tung, Truong Thanh; Møller, Jesper Vuust; Nielsen, John; Palmgren, Michael; Christensen, Søren Brøgger; Fuglsang, Anja Thoe

    2016-01-01

    P-type ATPases catalyze the active transport of cations and phospholipids across biological membranes. Members of this large family are involved in a range of fundamental cellular processes. To date, a substantial number of P-type ATPase inhibitors have been characterized, some of which are used as drugs. In this work a library of natural compounds was screened and we first identified curcuminoids as plasma membrane H+-ATPases inhibitors in plant and fungal cells. We also found that some of the commercial curcumins contain several curcuminoids. Three of these were purified and, among the curcuminoids, demethoxycurcumin was the most potent inhibitor of all tested P-type ATPases from fungal (Pma1p; H+-ATPase), plant (AHA2; H+-ATPase) and animal (SERCA; Ca2+-ATPase) cells. All three curcuminoids acted as non-competitive antagonist to ATP and hence may bind to a highly conserved allosteric site of these pumps. Future research on biological effects of commercial preparations of curcumin should consider the heterogeneity of the material. PMID:27644036

  20. Towards p-type doping of ZnO by ion implantation

    SciTech Connect

    Coleman, V; Tan, H H; Jagadish, C; Kucheyev, S; Phillips, M; Zou, J

    2005-01-18

    Zinc oxide is a very attractive material for a range of optoelectronic devices including blue light-emitting diodes and laser diodes. Though n-type doping has been successfully achieved, p-type doing of ZnO is still a challenge that must be overcome before p-n junction devices can be realized. Ion implantation is widely used in the microelectronics industry for selective area doping and device isolation. Understanding damage accumulation and recrystallization processes is important for achieving selective area doping. In this study, As (potential p-type dopant) ion implantation and annealing studies were carried out. ZnO samples were implanted with high dose (1.4 x 10{sup 17} ions/cm{sup 2}) 300 keV As ions at room temperature. Furnace annealing of samples in the range of 900 C to 1200 C was employed to achieve recrystallization of amorphous layers and electrical activation of the dopant. Rutherford backscattering/channeling spectrometry, transmission electron microscopy and cathodolumiescence spectroscopy were used to monitor damage accumulation and annihilation behavior in ZnO. Results of this study have significant implications for p-type doing of ZnO by ion implantation.

  1. Efficient synthesis of triarylamine-based dyes for p-type dye-sensitized solar cells.

    PubMed

    Wild, Martin; Griebel, Jan; Hajduk, Anna; Friedrich, Dirk; Stark, Annegret; Abel, Bernd; Siefermann, Katrin R

    2016-01-01

    The class of triarylamine-based dyes has proven great potential as efficient light absorbers in inverse (p-type) dye sensitized solar cells (DSSCs). However, detailed investigation and further improvement of p-type DSSCs is strongly hindered by the fact that available synthesis routes of triarylamine-based dyes are inefficient and particularly demanding with regard to time and costs. Here, we report on an efficient synthesis strategy for triarylamine-based dyes for p-type DSSCs. A protocol for the synthesis of the dye-precursor (4-(bis(4-bromophenyl)amino)benzoic acid) is presented along with its X-ray crystal structure. The dye precursor is obtained from the commercially available 4(diphenylamino)benzaldehyde in a yield of 87% and serves as a starting point for the synthesis of various triarylamine-based dyes. Starting from the precursor we further describe a synthesis protocol for the dye 4-{bis[4'-(2,2-dicyanovinyl)-[1,1'-biphenyl]-4-yl]amino}benzoic acid (also known as dye P4) in a yield of 74%. All synthesis steps are characterized by high yields and high purities without the need for laborious purification steps and thus fulfill essential requirements for scale-up. PMID:27196877

  2. Efficient synthesis of triarylamine-based dyes for p-type dye-sensitized solar cells

    PubMed Central

    Wild, Martin; Griebel, Jan; Hajduk, Anna; Friedrich, Dirk; Stark, Annegret; Abel, Bernd; Siefermann, Katrin R.

    2016-01-01

    The class of triarylamine-based dyes has proven great potential as efficient light absorbers in inverse (p-type) dye sensitized solar cells (DSSCs). However, detailed investigation and further improvement of p-type DSSCs is strongly hindered by the fact that available synthesis routes of triarylamine-based dyes are inefficient and particularly demanding with regard to time and costs. Here, we report on an efficient synthesis strategy for triarylamine-based dyes for p-type DSSCs. A protocol for the synthesis of the dye-precursor (4-(bis(4-bromophenyl)amino)benzoic acid) is presented along with its X-ray crystal structure. The dye precursor is obtained from the commercially available 4(diphenylamino)benzaldehyde in a yield of 87% and serves as a starting point for the synthesis of various triarylamine-based dyes. Starting from the precursor we further describe a synthesis protocol for the dye 4-{bis[4′-(2,2-dicyanovinyl)-[1,1′-biphenyl]-4-yl]amino}benzoic acid (also known as dye P4) in a yield of 74%. All synthesis steps are characterized by high yields and high purities without the need for laborious purification steps and thus fulfill essential requirements for scale-up. PMID:27196877

  3. Demethoxycurcumin Is A Potent Inhibitor of P-Type ATPases from Diverse Kingdoms of Life

    PubMed Central

    Dao, Trong Tuan; Sehgal, Pankaj; Tung, Truong Thanh; Møller, Jesper Vuust; Nielsen, John; Palmgren, Michael; Christensen, Søren Brøgger

    2016-01-01

    P-type ATPases catalyze the active transport of cations and phospholipids across biological membranes. Members of this large family are involved in a range of fundamental cellular processes. To date, a substantial number of P-type ATPase inhibitors have been characterized, some of which are used as drugs. In this work a library of natural compounds was screened and we first identified curcuminoids as plasma membrane H+-ATPases inhibitors in plant and fungal cells. We also found that some of the commercial curcumins contain several curcuminoids. Three of these were purified and, among the curcuminoids, demethoxycurcumin was the most potent inhibitor of all tested P-type ATPases from fungal (Pma1p; H+-ATPase), plant (AHA2; H+-ATPase) and animal (SERCA; Ca2+-ATPase) cells. All three curcuminoids acted as non-competitive antagonist to ATP and hence may bind to a highly conserved allosteric site of these pumps. Future research on biological effects of commercial preparations of curcumin should consider the heterogeneity of the material. PMID:27644036

  4. Efficient synthesis of triarylamine-based dyes for p-type dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Wild, Martin; Griebel, Jan; Hajduk, Anna; Friedrich, Dirk; Stark, Annegret; Abel, Bernd; Siefermann, Katrin R.

    2016-05-01

    The class of triarylamine-based dyes has proven great potential as efficient light absorbers in inverse (p-type) dye sensitized solar cells (DSSCs). However, detailed investigation and further improvement of p-type DSSCs is strongly hindered by the fact that available synthesis routes of triarylamine-based dyes are inefficient and particularly demanding with regard to time and costs. Here, we report on an efficient synthesis strategy for triarylamine-based dyes for p-type DSSCs. A protocol for the synthesis of the dye-precursor (4-(bis(4-bromophenyl)amino)benzoic acid) is presented along with its X-ray crystal structure. The dye precursor is obtained from the commercially available 4(diphenylamino)benzaldehyde in a yield of 87% and serves as a starting point for the synthesis of various triarylamine-based dyes. Starting from the precursor we further describe a synthesis protocol for the dye 4-{bis[4‧-(2,2-dicyanovinyl)-[1,1‧-biphenyl]-4-yl]amino}benzoic acid (also known as dye P4) in a yield of 74%. All synthesis steps are characterized by high yields and high purities without the need for laborious purification steps and thus fulfill essential requirements for scale-up.

  5. Platinum monolayer electrocatalyst on gold nanostructures on silicon for photoelectrochemical hydrogen evolution.

    PubMed

    Kye, Joohong; Shin, Muncheol; Lim, Bora; Jang, Jae-Won; Oh, Ilwhan; Hwang, Seongpil

    2013-07-23

    Pt monolayer decorated gold nanostructured film on planar p-type silicon is utilized for photoelectrochemical H2 generation in this work. First, gold nanostructured film on silicon was spontaneously produced by galvanic displacement of the reduction of gold ion and the oxidation of silicon in the presence of fluoride anion. Second, underpotential deposition (UPD) of copper under illumination produced Cu monolayer on gold nanostructured film followed by galvanic exchange of less-noble Cu monolayer with more-noble PtCl6(2-). Pt(shell)/Au(core) on p-type silicon showed the similar activity with platinum nanoparticle on silicon for photoelectrochemical hydrogen evolution reaction in spite of low platinum loading. From Tafel analysis, Pt(shell)/Au(core) electrocatalyst shows the higher area-specific activity than platinum nanoparticle on silicon demonstrating the significant role of underlying gold for charge transfer reaction from silicon to H(+) through platinum catalyst. PMID:23750804

  6. Characterization of near-infrared n-type {beta}-FeSi{sub 2}/p-type Si heterojunction photodiodes at room temperature

    SciTech Connect

    Shaban, Mahmoud; Nomoto, Keita; Izumi, Shota; Yoshitake, Tsuyoshi

    2009-06-01

    n-type {beta}-FeSi{sub 2}/p-type Si heterojunctions were fabricated from {beta}-FeSi{sub 2} films epitaxially grown on Si(111) by facing-target direct-current sputtering. Sharp film-substrate interfaces were confirmed by scanning electron microscopy. The current-voltage and photoresponse characteristics were measured at room temperature. They exhibited good rectifying properties and a change of approximately one order of magnitude in the current at a bias voltage of -1 V under illumination by a 6 mW, 1.31 {mu}m laser. The estimated detectivity was 1.5x10{sup 9} cm {radical}Hz W at 1.31 {mu}m. The results suggest that the {beta}-FeSi{sub 2}/Si heterojunctions can be used as near-infrared photodetectors that are compatible with silicon integrated circuits.

  7. n-type amorphous (or microcrystalline) silicon/p-type crystalline silicon heterojunction electrodes for efficient and stable solar-to-chemical conversion

    NASA Astrophysics Data System (ADS)

    Ueda, Keiichi; Nakato, Yoshihiro; Sakai, Yuichi; Matsumura, Michio; Tsubomura, Hiroshi

    1988-08-01

    A detailed study of the photovoltaic properties of Pt-coated n-a or micro -c-Si/p-c Si heterojunction electrodes is presented. These electrodes generated photocurrents much higher than those for Pt-coated (+)-p homojunction single-crystal Si electrodes, together with photovoltages nearly the same as those for the latter electrodes, clearly indicating the 'window' effect of the n-type amorphous or microcrystalline Si layer. A photochemical cell equipped with such an electrode and a Pt-plate counterelectrode, separated by a cation exchange membrane, photodecomposed hydrogen iodide into hydrogen and iodine with a solar-to-chemical conversion efficiency of 10.8 percent, the highest efficiency reported so far for the direct solar-to-chemical conversion without any externally applied voltage.

  8. Thermal stability of boron nitride/silicon p-n heterojunction diodes

    SciTech Connect

    Teii, Kungen Mizusako, Yusei; Hori, Takuro; Matsumoto, Seiichiro

    2015-10-21

    Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp{sup 2}-bonded BN (sp{sup 2}BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 10{sup 5} at room temperature by optimizing the thickness of the sp{sup 2}BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp{sup 2}BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.

  9. Thermal stability of boron nitride/silicon p-n heterojunction diodes

    NASA Astrophysics Data System (ADS)

    Teii, Kungen; Mizusako, Yusei; Hori, Takuro; Matsumoto, Seiichiro

    2015-10-01

    Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp2-bonded BN (sp2BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 105 at room temperature by optimizing the thickness of the sp2BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp2BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.

  10. Reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type HgCdTe

    SciTech Connect

    Musca, C.A.; Smith, E.P.G.; Siliquini, J.F.; Dell, J.M.; Antoszewski, J.; Faraone, L.; Piotrowski, J.

    1998-12-31

    Mercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x = 0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400 mT, CH{sub 4}/H{sub 2}, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200 C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (N{sub A}-N{sub D} = 2 {times} 10{sup 16} cm{sup {minus}3}, {mu} = 350 cm{sup 2}.V{sup {minus}1}.s{sup {minus}1}).

  11. A room temperature ethanol sensor made from p-type Sb-doped SnO2 nanowires.

    PubMed

    Wu, Jyh Ming

    2010-06-11

    A p-type ethanol sensor with a response time of approximately 8.3 s at room temperature was produced by SnO(2):Sb nanowires. The electrical properties of p-type SnO(2) nanowires are stable with a hole concentration of 1.544 x 10(17) cm(-3) and a field-effect mobility of 22 cm(2) V(-2) S(-1). X-ray photoelectron spectroscopy (XPS) and Hall measurement revealed that as-synthesized nanowires exhibit p-type behavior. A comprehensive investigation of the p-type sensing mechanism is reported.

  12. Investigation of Intrinsic Electrical Characteristics and Contact Effects in p-Type Tin Monoxide Thin-Film Transistors Using Gated-Four-Probe Measurements.

    PubMed

    Han, Young-Joon; Choi, Yong-Jin; Jeong, Hoon; Kwon, Hyuck-In

    2015-10-01

    We investigate the intrinsic electrical characteristics and source/drain parasitic resistance in p-type SnO TFTs fabricated using Ni electrodes based on the gated-four-probe method. Because of the relatively high work function and inexpensive price, Ni has been most frequently used as the source/drain electrode materials in p-type SnO TFTs. However, our experimental data shows that the width normalized parasitic resistances of SnO TFT with Ni electrodes are around one to three orders of magnitude higher than those in the representative n-type oxide TFT, amorphous indium- gallium-zinc oxide TFT, and are comparable with those in amorphous silicon TFTs with Mo electrodes. This result implies that the electrical performance of the short channel SnO TFT can be dominated by the source/drain parasitic resistances. The intrinsic field-effect mobility extracted without being influenced by source/drain parasitic resistance was ~2.0 cm2/Vs, which is around twice the extrinsic field-effect mobility obtained from the conventional transconductance method. The large contact resistance is believed to be mainly caused from the heterogeneous electronic energy-level mismatch between the SnO and Ni electrodes. PMID:26726376

  13. Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction.

    PubMed

    Vabbina, PhaniKiran; Choudhary, Nitin; Chowdhury, Al-Amin; Sinha, Raju; Karabiyik, Mustafa; Das, Santanu; Choi, Wonbong; Pala, Nezih

    2015-07-22

    Two dimensional (2D) Molybdenum disulfide (MoS2) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoS2 photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoS2 with graphene to form a MoS2/graphene Schottky photodetector where photo generated holes travel from graphene to MoS2 over the Schottky barrier under illumination. We found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW(-1) and a noise equivalent power of 7.8 × 10(-12) W/√Hz at 1440 nm.

  14. Initial results and long-term clinical follow-up of an amorphous hydrogenated silicon-carbide-coated stent in daily practice.

    PubMed

    Hanekamp, Clara EE; Bonnier, Hans JRM; Michels, Rolf H; Peels, Kathinka H; Heijmen, Eric PCM; Hagen Ev, Eduard van; Koolen, Jacques J

    1998-01-01

    The hemocompatibility and biocompatibility of a stent are determined by the physical and electrochemical properties of the stent surface. The aim of this study was to determine the feasibility, safety and efficacy of implantation of a stent coated with silicon carbide. Baseline characteristics were collected prospectively. The occurrence of cardiac adverse events and the angina score were assessed at clinical follow-up. A total of 193 Tensum stents were implanted in 174 patients. In hospital, one patient experienced stent thrombosis and in 6% of the patients a creatinine kinase elevation to 240 U/l or more occurred. Long-term follow-up was performed in 172 patients, with a mean follow-up of 454 +/- 181 days. Ninety-seven per cent were still alive, 15% had undergone target-vessel revascularization, and 2% had angiographic restenosis and were treated with medication only. Seventy-one per cent of the patients were free of anginal complaints, and 20% had anginal complaints in Canadian Cardiac Society class I or II. The Tensum coronary stent showed to be a safe and efficacious device in this study, with a high primary success rate and favorable long-term clinical followup.

  15. Temperature Dependent Tensile Fracture Stress of n- and p-Type Filled-Skutterudite Materials

    SciTech Connect

    Salvador, James R.; Yang, Jihui; Wereszczak, Andrew A; Wang, Hsin; Cho, Jung Y

    2011-01-01

    While materials with excellent thermoelectric performance are most desirable for higher heat to electrical energy conversion efficiency, thermoelectric materials must also be sufficiently mechanically robust to withstand the large number of thermal cycles and vibrational stresses likely to be encountered while in service, particularly in automotive applications. Further these TE materials should be composed of non-toxic and naturally abundant constituent elements and be available as both n- and p-type varieties. Skutterudite based thermoelectric materials seemingly fit this list of criteria. In this contribution we report on the synthesis, tensile fracture strengths, low temperature electrical and thermal transport properties, and coefficients of thermal expansion (CTE), of the n-type skutterudite La{sub 0.05({+-}0.01)}Ba{sub 0.07({+-}0.04)}Yb{sub 0.08({+-}0.02)}Co{sub 4.00({+-}0.01)}Sb{sub 12.02({+-}0.03)} and the p-type Ce{sub 0.30({+-}0.02)}Co{sub 2.57({+-}0.02)}Fe{sub 1.43({+-}0.02)}Sb{sub 11.98({+-}0.03)}. Both materials have tensile fracture strengths that are temperature independent up to 500 C, and are in the range of {approx}140 MPa as measured by a three point bend flexure test fixture described herein. The CTE's were measured by dual rod dilatometry and were determined to be 10.3 ppm/C for the n-type material and 11.5 ppm/C for p-type up to 450 C.

  16. Ivermectin is a nonselective inhibitor of mammalian P-type ATPases.

    PubMed

    Pimenta, Paulo Henrique Cotrim; Silva, Claudia Lucia Martins; Noël, François

    2010-02-01

    Ivermectin is a large spectrum antiparasitic drug that is very safe at the doses actually used. However, as it is being studied for new applications that would require higher doses, we should pay attention to its effects at high concentrations. As micromolar concentrations of ivermectin have been reported to inhibit the sarco-endoplasmic reticulum Ca(2+)-ATPase (SERCA), we decided to investigate its putative inhibitory effect on other two important P-type ATPases, namely the Na(+) , K(+)-ATPase and H(+)/K(+)-ATPase. We first extended the data on SERCA, using preparations from rat enriched in SERCA1a (extensor digitorum longus) and 1b (heart) isoforms. Secondly, we tested the effect of ivermectin in two preparations of rat Na(+), K(+)-ATPase in order to appreciate its putative selectivity towards the alpha(1) isoform (kidney) and the alpha(2)/alpha(3) isoforms (brain), and in an H(+)/K(+)-ATPase preparation from rat stomach. Ivermectin inhibited all these ATPases with similar IC(50) values (6-17 microM). With respect to the inhibition of the Na(+), K(+)-ATPase, ivermectin acts by a mechanism different from the classical cardiac glycosides, based on selectivity towards the isoforms, sensibility to the antagonistic effect of K(+) and to ionic conditions favoring different conformations of the enzyme. We conclude that ivermectin is a nonselective inhibitor of three important mammalian P-type ATPases, which is indicative of putative important adverse effects if this drug were used at high doses. As a consequence, we propose that novel analogs of ivermectin should be developed and tested both for their parasitic activity and in vitro effects on P-type ATPases.

  17. Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection

    SciTech Connect

    Mandalapu, L.J.; Yang, Z.; Xiu, F.X.; Zhao, D.T.; Liu, J.L.

    2006-02-27

    ZnO-based p-n homojunctions were grown using molecular-beam epitaxy. Sb and Ga were used as dopants to achieve the p-type and n-type ZnO, respectively. The mesa devices were fabricated by employing wet etching and standard photolithography techniques. Al/Ti metal was deposited by electron-beam evaporation and annealed to form Ohmic contacts. Current-voltage measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained. Very good response to ultraviolet light illumination was observed from photocurrent measurements.

  18. Elastic constants determined by nanoindentation for p-type thermoelectric half-Heusler

    SciTech Connect

    Gahlawat, S.; Wheeler, L.; White, K. W. E-mail: kwwhite@uh.edu; He, R.; Chen, S.; Ren, Z. F. E-mail: kwwhite@uh.edu

    2014-08-28

    This paper presents a study of the elastic properties of the p-type thermoelectric half-Heusler material, Hf{sub 0.44}Zr{sub 0.44}Ti{sub 0.12}CoSb{sub 0.8}Sn{sub 0.2}, using nanoindentation. Large grain-sized polycrystalline specimens were fabricated for these measurements, providing sufficient indentation targets within single grains. Electron Backscatter Diffraction methods indexed the target grains for the correlation needed for our elastic analysis of individual single crystals for this cubic thermoelectric material. Elastic properties, including the Zener ratio and the Poisson ratio, obtained from the elasticity tensor are also reported.

  19. Ferromagnetic-resonance induced electromotive forces in Ni81Fe19 | p-type diamond

    NASA Astrophysics Data System (ADS)

    Fukui, Naoki; Morishita, Hiroki; Kobayashi, Satoshi; Miwa, Shinji; Mizuochi, Norikazu; Suzuki, Yoshishige

    2016-10-01

    We report on direct-current (DC) electromotive forces (emfs) in a nickel-iron alloy (Ni81 Fe19) | p-type diamond under the ferromagnetic resonance of the Ni81Fe19 layer at room temperature. The observed DC emfs take its maximum around the ferromagnetic resonant frequency of the Ni81Fe19, and their signs are reversed by reversing the direction of an externally-applied magnetic field; it shows that the observed DC emfs are spin-related emfs.

  20. Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition

    PubMed Central

    2013-01-01

    Metal oxide nanosheets have potential applications in novel nanoelectronics as nanocrystal building blocks. In this work, the devices with a structure of Au/p-type Co3O4 nanosheets/indium tin oxide/glass having bipolar resistive switching characteristics were successfully fabricated. The experimental results demonstrate that the device have stable high/low resistance ratio that is greater than 25, endurance performance more than 200 cycles, and data retention more than 10,000 s. Such a superior performance of the as-fabricated device could be explained by the bulk film and Co3O4/indium tin oxide glass substrate interface effect. PMID:23331856

  1. Electronic structure of p-type transparent conducting oxide CuAlO2

    NASA Astrophysics Data System (ADS)

    Mo, Sung-Kwan; Yoon, Joonseok; Liu, Xiaosong; Yang, Wanli; Mun, Bongjin; Ju, Honglyoul

    2014-03-01

    CuAlO2 is a prototypical p-type transparent conducting oxide. Despite its importance for potential applications and number of studies on its band structure and gap characteristics, experimental study on the momentum-resolved electronic structure has been lacking. We present angle-resolved photoemission data on single crystalline CuAlO2 using synchrotron light source to reveal complete band structure. Complemented by the x-ray absorption and emission spectra, we also study band gap characteristics and compare them with theory.

  2. Fabrication and performance tests of a segmented p-type HPGe detector

    NASA Astrophysics Data System (ADS)

    King, George S.; Avignone, Frank T.; Cox, Christopher E.; Hossbach, Todd W.; Jennings, Wayne; Reeves, James H.

    2008-10-01

    A p-type semi-coaxial HPGe detector has been segmented by cutting, with a diamond saw, and etching four circumferential grooves through the Li-diffused dead layer. The degree of segmentation was tested using a well-collimated low-energy gamma-ray source. An analysis cut that rejected events depositing energy in more than one segment was applied to an energy interval of 2038±5 keV, the region of interest ( Q ββ) for 76Ge 0 νββ decay experiments. This segmentation cut resulted in a reduction of the Compton continuum of 59%.

  3. Does p-type ohmic contact exist in WSe2-metal interfaces?

    NASA Astrophysics Data System (ADS)

    Wang, Yangyang; Yang, Ruo Xi; Quhe, Ruge; Zhong, Hongxia; Cong, Linxiao; Ye, Meng; Ni, Zeyuan; Song, Zhigang; Yang, Jinbo; Shi, Junjie; Li, Ju; Lu, Jing

    2015-12-01

    Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for

  4. Single-hole transistor in p-type GaAs /AlGaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Grbić, Boris; Leturcq, Renaud; Ensslin, Klaus; Reuter, Dirk; Wieck, Andreas D.

    2005-12-01

    A single-hole transistor is patterned in a p-type, C-doped GaAs /AlGaAs heterostructure by scanning probe oxidation lithography. Clear Coulomb blockade resonances have been observed at Thole=300mK. A charging energy of ˜1.5meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the temperature dependence of Coulomb peak heights indicate that the dot is in the multilevel transport regime. Fluctuations in peak spacings larger than the estimated mean single-particle level spacing are observed.

  5. Silicon spintronics.

    PubMed

    Jansen, Ron

    2012-04-23

    Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

  6. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

    SciTech Connect

    Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

    2014-11-25

    The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

  7. Multimode Silicon Nanowire Transistors

    PubMed Central

    2014-01-01

    The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction. A heterostructural device design is achieved by employing a self-aligned nickel-silicide source contact. The polymorph operation of the dual-gate device enabling the configuration of one p- and two n-type transistor modes is demonstrated. Not only the type but also the carrier injection mode can be altered by appropriate biasing of the two gate terminals or by inverting the drain bias. With a combined band-to-band and Schottky tunneling mechanism, in p-type mode a subthreshold swing as low as 143 mV/dec and an ON/OFF ratio of up to 104 is found. As the device operates in forward bias, a nonconventional tunneling transistor is realized, enabling an effective suppression of ambipolarity. Depending on the drain bias, two different n-type modes are distinguishable. The carrier injection is dominated by thermionic emission in forward bias with a maximum ON/OFF ratio of up to 107 whereas in reverse bias a Schottky tunneling mechanism dominates the carrier transport. PMID:25303290

  8. Multimode silicon nanowire transistors.

    PubMed

    Glassner, Sebastian; Zeiner, Clemens; Periwal, Priyanka; Baron, Thierry; Bertagnolli, Emmerich; Lugstein, Alois

    2014-11-12

    The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction. A heterostructural device design is achieved by employing a self-aligned nickel-silicide source contact. The polymorph operation of the dual-gate device enabling the configuration of one p- and two n-type transistor modes is demonstrated. Not only the type but also the carrier injection mode can be altered by appropriate biasing of the two gate terminals or by inverting the drain bias. With a combined band-to-band and Schottky tunneling mechanism, in p-type mode a subthreshold swing as low as 143 mV/dec and an ON/OFF ratio of up to 10(4) is found. As the device operates in forward bias, a nonconventional tunneling transistor is realized, enabling an effective suppression of ambipolarity. Depending on the drain bias, two different n-type modes are distinguishable. The carrier injection is dominated by thermionic emission in forward bias with a maximum ON/OFF ratio of up to 10(7) whereas in reverse bias a Schottky tunneling mechanism dominates the carrier transport. PMID:25303290

  9. Silicon nanowire Esaki diodes.

    PubMed

    Schmid, Heinz; Bessire, Cedric; Björk, Mikael T; Schenk, Andreas; Riel, Heike

    2012-02-01

    We report on the fabrication and characterization of silicon nanowire tunnel diodes. The silicon nanowires were grown on p-type Si substrates using Au-catalyzed vapor-liquid-solid growth and in situ n-type doping. Electrical measurements reveal Esaki diode characteristics with peak current densities of 3.6 kA/cm(2), peak-to-valley current ratios of up to 4.3, and reverse current densities of up to 300 kA/cm(2) at 0.5 V reverse bias. Strain-dependent current-voltage (I-V) measurements exhibit a decrease of the peak tunnel current with uniaxial tensile stress and an increase of 48% for 1.3 GPa compressive stress along the <111> growth direction, revealing the strain dependence of the Si band structure and thus the tunnel barrier. The contributions of phonons to the indirect tunneling process were probed by conductance measurements at 4.2 K. These measurements show phonon peaks at energies corresponding to the transverse acoustical and transverse optical phonons. In addition, the low-temperature conductance measurements were extended to higher biases to identify potential impurity states in the band gap. The results demonstrate that the most likely impurity, namely, Au from the catalyst particle, is not detectable, a finding that is also supported by the excellent device properties of the Esaki diodes reported here.

  10. Ferromagnetism in Silicon Single Crystals with Positively Charged Vacancy Clusters

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Zhang, Xinghong; Yuan, Quan; Han, Jiecai; Zhou, Shengqiang; Song, Bo

    Defect-induced ferromagnetism provides an alternative for organic and semiconductor spintronics. Here, we investigated the magnetism in Silicon after neutron irradiation and try to correlate the observed magnetism to particular defects in Si. Commercially available p-type Si single crystal wafer is cut into pieces for performing neutron irradiations. The magnetic impurities are ruled out as they can not be detected by secondary ion mass spectroscopy. With positron annihilation lifetime spectroscopy, the positron trapping center corresponding to lifetime 375 ps is assigned to a kind of stable vacancy clusters of hexagonal rings (V6) and its concentration is enhanced by increasing neutron doses. After irradiation, the samples still show strong diamagnetism. The weak ferromagnetic signal in Si after irradiation enhances and then weakens with increasing irradiation doses. The saturation magnetization at room temperature is almost the same as that at 5 K. The X-ray magnetic circular dichroism further provides the direct evidence that Silicon is the origin of this ferromagnetism. Using first-principles calculations, it is found that positively charged V6 brings the spin polarization and the defects have coupling with each other. The work is financially supported by the Helmholtz Postdoc Programme (Initiative and Networking Fund, PD-146).

  11. Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches

    NASA Astrophysics Data System (ADS)

    Pawlik, Matthieu; Vilcot, Jean-Pierre; Halbwax, Mathieu; Gauthier, Michel; Le Quang, Nam

    2015-08-01

    The development of an efficient surface passivation is a key feature of silicon solar cells towards the improvement of €/W ratio. An Al2O3 layer coated by plasma-enhanced atomic layer deposition has proven its efficiency to increase the minority carrier lifetime on p-type silicon. However, the firing step, which is a common part of the manufacturing process that includes metallic pastes for screen-printed contacts, ruins this passivation effect. On the basis of photoelectric, electric, and chemical experimental studies, a correlation is provided in this paper between the different microscopic and macroscopic behaviors that govern the passivation process. To show this correlation, photoconductance decay measurements have been carried out to determine minority carrier lifetime. Following which, the capacitance-voltage measurement results are used to extract electrical parameters, namely, the densities of interface defects and effective charges. In addition, complementing secondary ion mass spectrometry (SIMS) experiments revealed the different chemical species that can be relevant for the explanation of passivation quality and macroscopic electrical measurements.

  12. Does p-type ohmic contact exist in WSe2-metal interfaces?

    PubMed

    Wang, Yangyang; Yang, Ruo Xi; Quhe, Ruge; Zhong, Hongxia; Cong, Linxiao; Ye, Meng; Ni, Zeyuan; Song, Zhigang; Yang, Jinbo; Shi, Junjie; Li, Ju; Lu, Jing

    2016-01-14

    Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.

  13. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.

    PubMed

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa(1-x)N/GaN superlattice structure, by modulation doping of Mg in the AlxGa(1-x)N barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 10(18) cm(-3) has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports. PMID:26777294

  14. Easily doped p-type, low hole effective mass, transparent oxides

    PubMed Central

    Sarmadian, Nasrin; Saniz, Rolando; Partoens, Bart; Lamoen, Dirk

    2016-01-01

    Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications – i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe. PMID:26854336

  15. Structural and Thermoelectric Properties of Polycrystalline p-Type Mg2- x Li x Si

    NASA Astrophysics Data System (ADS)

    Nieroda, P.; Kolezynski, A.; Oszajca, M.; Milczarek, J.; Wojciechowski, K. T.

    2016-07-01

    The aim of this study was to determine the location of Li atoms in Mg2Si structure, and verify the influence of Li dopant on the transport properties of obtained thermoelectric materials. The results of theoretical studies of the electronic band structure (full potential linearized augmented plane wave method) in Li-doped Mg2Si are presented. Theoretical calculations indicate that only in the case when Li is located in the Mg position, the samples will have p-type conduction. To confirm the theoretical predictions, a series of samples with nominal composition Mg2- x Li x Si ( x = 0-0.5) were prepared using the spark plasma sintering (SPS) method. Structural and phase composition analyses were carried out by x-ray and neutron powder diffraction, as well as scanning electron microscopy. Neutron diffraction studies confirmed that the lithium atoms substitute magnesium in the Mg2Si structure. The investigations of the influence of Li dopant on the transport properties, i.e. electrical conductivity, the Seebeck coefficient and the thermal conductivity, were carried out in a temperature range from 340 K to 720 K. Carrier concentration was measured with Hall method. The positive values of the Seebeck coefficient and Hall coefficient indicate that all examined samples show p-type conductivity. On the basis of the experimental data, the temperature dependencies of the thermoelectric figure of merit ZT were calculated.

  16. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

    PubMed Central

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1−xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1−xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm−3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports. PMID:26777294

  17. Atomic layer deposition of undoped TiO2 exhibiting p-type conductivity.

    PubMed

    Iancu, Andrei T; Logar, Manca; Park, Joonsuk; Prinz, Fritz B

    2015-03-11

    With prominent photocatalytic applications and widespread use in semiconductor devices, TiO2 is one of the most popular metal oxides. However, despite its popularity, it has yet to achieve its full potential due to a lack of effective methods for achieving p-type conductivity. Here, we show that undoped p-type TiO2 films can be fabricated by atomic layer deposition (ALD) and that their electrical properties can be controlled across a wide range using proper postprocessing anneals in various ambient environments. Hole mobilities larger than 400 cm(2)/(V·s) are accessible superseding the use of extrinsic doping, which generally produces orders of magnitude smaller values. Through a combination of analyses and experiments, we provide evidence that this behavior is primarily due to an excess of oxygen in the films. This discovery enables entirely new categories of TiO2 devices and applications, and unlocks the potential to improve existing ones. TiO2 homojunction diodes fabricated completely by ALD are developed as a demonstration of the utility of these techniques and shown to exhibit useful rectifying characteristics even with minimal processing refinement.

  18. Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

    PubMed

    Cao, Xuan; Cao, Yu; Zhou, Chongwu

    2016-01-26

    Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (<3 g/m(2)), and good mechanical robustness (accommodating severe crumpling and 67% compressive strain). Furthermore, the nanotube circuits can operate properly with 33% compressive strain. On the basis of the aforementioned features, our ultraflexible p-type nanotube transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

  19. A P-type ATPase importer that discriminates between essential and toxic transition metals.

    PubMed

    Lewinson, Oded; Lee, Allen T; Rees, Douglas C

    2009-03-24

    Transition metals, although being essential cofactors in many physiological processes, are toxic at elevated concentrations. Among the membrane-embedded transport proteins that maintain appropriate intracellular levels of transition metals are ATP-driven pumps belonging to the P-type ATPase superfamily. These metal transporters may be differentiated according to their substrate specificities, where the majority of pumps can extrude either silver and copper or zinc, cadmium, and lead. In the present report, we have established the substrate specificities of nine previously uncharacterized prokaryotic transition-metal P-type ATPases. We find that all of the newly identified exporters indeed fall into one of the two above-mentioned categories. In addition to these exporters, one importer, Pseudomonas aeruginosa Q9I147, was also identified. This protein, designated HmtA (heavy metal transporter A), exhibited a different substrate recognition profile from the exporters. In vivo metal susceptibility assays, intracellular metal measurements, and transport experiments all suggest that HmtA mediates the uptake of copper and zinc but not of silver, mercury, or cadmium. The substrate selectivity of this importer ensures the high-affinity uptake of essential metals, while avoiding intracellular contamination by their toxic counterparts.

  20. Anabaena sp. DyP-type peroxidase is a tetramer consisting of two asymmetric dimers.

    PubMed

    Yoshida, Toru; Ogola, Henry Joseph Oduor; Amano, Yoshimi; Hisabori, Toru; Ashida, Hiroyuki; Sawa, Yoshihiro; Tsuge, Hideaki; Sugano, Yasushi

    2016-01-01

    DyP-type peroxidases are a newly discovered family of heme peroxidases distributed from prokaryotes to eukaryotes. Recently, using a structure-based sequence alignment, we proposed the new classes, P, I and V, as substitutes for classes A, B, C, and D [Arch Biochem Biophys 2015;574:49-55]. Although many class V enzymes from eukaryotes have been characterized, only two from prokaryotes have been reported. Here, we show the crystal structure of one of these two enzymes, Anabaena sp. DyP-type peroxidase (AnaPX). AnaPX is tetramer formed from Cys224-Cys224 disulfide-linked dimers. The tetramer of wild-type AnaPX was stable at all salt concentrations tested. In contrast, the C224A mutant showed salt concentration-dependent oligomeric states: in 600 mM NaCl, it maintained a tetrameric structure, whereas in the absence of salt, it dissociated into monomers, leading to a reduction in thermostability. Although the tetramer exhibits non-crystallographic, 2-fold symmetry in the asymmetric unit, two subunits forming the Cys224-Cys224 disulfide-linked dimer are related by 165° rotation. This asymmetry creates an opening to cavities facing the inside of the tetramer, providing a pathway for hydrogen peroxide access. Finally, a phylogenetic analysis using structure-based sequence alignments showed that class V enzymes from prokaryotes, including AnaPX, are phylogenetically closely related to class V enzymes from eukaryotes.

  1. p-Type polymer-hybridized high-performance piezoelectric nanogenerators.

    PubMed

    Lee, Keun Young; Kumar, Brijesh; Seo, Ju-Seok; Kim, Kwon-Ho; Sohn, Jung Inn; Cha, Seung Nam; Choi, Dukhyun; Wang, Zhong Lin; Kim, Sang-Woo

    2012-04-11

    Enhancing the output power of a nanogenerator is essential in applications as a sustainable power source for wireless sensors and microelectronics. We report here a novel approach that greatly enhances piezoelectric power generation by introducing a p-type polymer layer on a piezoelectric semiconducting thin film. Holes at the film surface greatly reduce the piezoelectric potential screening effect caused by free electrons in a piezoelectric semiconducting material. Furthermore, additional carriers from a conducting polymer and a shift in the Fermi level help in increasing the power output. Poly(3-hexylthiophene) (P3HT) was used as a p-type polymer on piezoelectric semiconducting zinc oxide (ZnO) thin film, and phenyl-C(61)-butyric acid methyl ester (PCBM) was added to P3HT to improve carrier transport. The ZnO/P3HT:PCBM-assembled piezoelectric power generator demonstrated 18-fold enhancement in the output voltage and tripled the current, relative to a power generator with ZnO only at a strain of 0.068%. The overall output power density exceeded 0.88 W/cm(3), and the average power conversion efficiency was up to 18%. This high power generation enabled red, green, and blue light-emitting diodes to turn on after only tens of times bending the generator. This approach offers a breakthrough in realizing a high-performance flexible piezoelectric energy harvester for self-powered electronics. PMID:22409420

  2. Origin of p -type conduction in single-crystal CuAlO2

    NASA Astrophysics Data System (ADS)

    Tate, J.; Ju, H. L.; Moon, J. C.; Zakutayev, A.; Richard, A. P.; Russell, J.; McIntyre, D. H.

    2009-10-01

    We report measurements of the structural, optical, transport, and magnetic properties of single crystals of the anisotropic p -type transparent semiconductor CuAlO2 . The indirect and direct band gaps are 2.97 and 3.47 eV, respectively. Temperature-dependent Hall measurements yield a positive Hall coefficient in the measured range and an activated carrier temperature dependence. The resistivity is anisotropic, with the ab -plane resistivity about 25 times smaller than the c -axis resistivity at room temperature. Both are activated with similar activation energies. The room-temperature ab -plane mobility is relatively large at 3cm2V-1s-1 , and we infer a c -axis mobility of 0.12cm2V-1s-1 . The Seebeck coefficient is positive at all measured temperatures, and has a T-1 dependence over most of the measured range. The low-temperature paramagnetic moment is consistent with a spin-1/2 defect with a density of 3.4×1020cm-3 . These results suggest that the conduction mechanism for p -type carriers in CuAlO2 is charge transport in the valence band and that the holes are thermally activated from copper-vacancy acceptor states located about 700 meV above the valence-band maximum.

  3. Preparation of p-type InP layers for detection of radiation

    NASA Astrophysics Data System (ADS)

    Procházková, O.; Grym, J.; Zavadil, J.; Zdánský, K.

    2005-02-01

    We have focused on the investigation of the impact of Ce, Tm, Tm 2O 3, and Lu addition in the liquid-phase epitaxial growth process on the structural and electro-optical properties of InP layers in the context of their possible application in detector structures, where detection will be mediated via the depletion layer of high quality Schottky contact. The effect of Tm 2O 3 and Lu is reported for the first time. The grown layers were examined via scanning electron microscopy, low-temperature photoluminescence spectroscopy, capacitance-voltage measurements using the mercury probe and by the temperature-dependent Hall effect. Availing Tm addition with concentration 5.4×10 -2 at%, we have prepared thick (>10 μm) p-type conductivity InP layers with the structural defect density reduced by a half-order of magnitude and reduced electrically active impurity concentration up to ˜7×10 14 cm -3. We point out that Tm appears as a promising candidate for the preparation of very pure p-type InP layers. The mechanism of purification efficiency of different rare earths from donors and acceptors leading to the n→p conductivity type crossover has been discussed.

  4. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

    NASA Astrophysics Data System (ADS)

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1-xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1-xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm-3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

  5. Transporters, chaperones, and P-type ATPases controlling grapevine copper homeostasis.

    PubMed

    Leng, Xiangpeng; Mu, Qian; Wang, Xiaomin; Li, Xiaopeng; Zhu, Xudong; Shangguan, Lingfei; Fang, Jinggui

    2015-11-01

    With more copper and copper-containing compounds used as bactericides and fungicides in viticulture, copper homeostasis in grapevine (Vitis) has become one of the serious environmental crises with great risk. To better understand the regulation of Cu homeostasis in grapevine, grapevine seedlings cultured in vitro with different levels of Cu were utilized to investigate the tolerance mechanisms of grapevine responding to copper availability at physiological and molecular levels. The results indicated that Cu contents in roots and leaves arose with increasing levels of Cu application. With copper concentration increasing, malondialdehyde (MDA) content increased in roots and leaves and the activities of superoxide dismutase (SOD), peroxidase (POD), and catalase (CAT) increased to protect the plant itself from damage. The expression patterns of 19 genes, encoding transporters, chaperones, and P-type ATPases involved in copper homeostasis in root and leaf of grapevine seedling under various levels of Cu(2+) were further analyzed. The expression patterns indicated that CTr1, CTr2, and CTr8 transporters were significantly upregulated in response both to Cu excess and deficiency. ZIP2 was downregulated in response to Cu excess and upregulated under Cu-deficient conditions, while ZIP4 had an opposite expression pattern under similar conditions. The expression of chaperones and P-type ATPases in response to Cu availability in grapevine were also briefly studied.

  6. Tailoring of the Metal-N/P-Type GaSb Interface Properties for Device Production

    SciTech Connect

    Varblianska, K.; Tzeneva, S.; Comninou, Ph.; Nihtianova, D.

    2007-04-23

    There are some difficulties in producing Schottky barriers (SB) to p-type GaSb and ohmic contacts (OC) to n-type GaSb connected with the physical nature of the GaSb itself. By applying low energy Ar ion sputtering at 200-700V and (NH4)2S solution treatment of the p-type substrates we achieved a rectifying behavior of the p-GaSb/Pd contacts. The same procedure combined with a proper annealing led to the production of good n-GaSb/Pd/Ge/Au ohmic contacts. The electrical behavior of the SB and OC is inferred from their current-voltage characteristics on specially prepared diode structures. SEM and TEM investigations are conducted to specify the surface and interface reactions during the processing. We interpret these results in terms of the generation of such a Ga to Sb vacancy concentration ratio during the ion sputtering that enhances the incorporation of Ge and S as donor impurities in the GaSb surface.

  7. Fullerene C{sub 70} as a p-type donor in organic photovoltaic cells

    SciTech Connect

    Zhuang, Taojun; Wang, Xiao-Feng E-mail: zrhong@ucla.edu Sano, Takeshi; Kido, Junji E-mail: zrhong@ucla.edu; Hong, Ziruo E-mail: zrhong@ucla.edu; Li, Gang; Yang, Yang

    2014-09-01

    Fullerenes and their derivatives have been widely used as n-type materials in organic transistor and photovoltaic devices. Though it is believed that they shall be ambipolar in nature, there have been few direct experimental proofs for that. In this work, fullerene C{sub 70}, known as an efficient acceptor, has been employed as a p-type electron donor in conjunction with 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile as an electron acceptor in planar-heterojunction (PHJ) organic photovoltaic (OPV) cells. High fill factors (FFs) of more than 0.70 were reliably achieved with the C{sub 70} layer even up to 100 nm thick in PHJ cells, suggesting the superior potential of fullerene C{sub 70} as the p-type donor in comparison to other conventional donor materials. The optimal efficiency of these unconventional PHJ cells was 2.83% with a short-circuit current of 5.33 mA/cm{sup 2}, an open circuit voltage of 0.72 V, and a FF of 0.74. The results in this work unveil the potential of fullerene materials as donors in OPV devices, and provide alternative approaches towards future OPV applications.

  8. New photovoltaic devices based on the sensitization of p-type semiconductors: challenges and opportunities.

    PubMed

    Odobel, Fabrice; Le Pleux, Loïc; Pellegrin, Yann; Blart, Errol

    2010-08-17

    Because solar energy is the most abundant renewable energy resource, the clear connection between human activity and global warming has strengthened the interest in photovoltaic science. Dye-sensitized solar cells (DSSCs) provide a promising low-cost technology for harnessing this energy source. Until recently, much of the research surrounding DSSCs had been focused on the sensitization of n-type semiconductors, such as titanium dioxide (Gratzel cells). In an n-type dye-sensitized solar cell (n-DSSC), an electron is injected into the conduction band of an n-type semiconductor (n-SC) from the excited state of the sensitizer. Comparatively few studies have examined the sensitization of wide bandgap p-type semiconductors. In a p-type DSSC (p-DSSC), the photoexcited sensitizer is reductively quenched by hole injection into the valence band of a p-type semiconductor (p-SC). The study of p-DSSCs is important both to understand the factors that control the rate of hole photoinjection and to aid the rational design of efficient p-DSSCs. In theory, p-DSSCs should be able to work as efficiently as n-DSSCs. In addition, this research provides a method for preparing tandem DSSCs consisting of a TiO(2)-photosensitized anode and a photosensitized p-type SC as a cathode. Tandem DSSCs are particularly important because they represent low-cost photovoltaic devices whose photoconversion efficiencies could exceed 15%. This Account describes recent research results on p-DSSCs. Because these photoelectrochemical devices are the mirror images of conventional n-DSSCs, they share some structural similarities, but they use different materials and have different charge transfer kinetics. In this technology, nickel oxide is the predominant p-SC material used, but much higher photoconversion efficiencies could be achieved with new p-SCs materials with deeper valence band potential. Currently, iodide/triiodide is the main redox mediator of electron transport within these devices, but we expect

  9. Metallurgical Route to Produce Upgraded Silicon and Monosilane

    SciTech Connect

    Mukashev, B. N.; Abdullin, Kh A.; Tamendarov, M. F.; Turmagambetov, T. S.; Beketov, B. A.; Page, M. R.; Kline, D. M.

    2009-01-01

    We studied alumothermic reduction of silica from silicate slag to obtain silicon-containing Alloy-I and Alloy-II. Phosphorous industry waste and synthetic slag are used as a silicate slag that consists of more than 90% silicon and calcium oxides and less than l0% other elemental oxides. Silicon-containing Alloy-I was upgraded by acid leaching to silicon of a fine powder structure. Using this powder, we grew poly- and mono-crystalline p-type silicon, with resistivity of 0.24 {Omega} cm, by the Czochralski method. Silicon-containing Alloy-II was used for obtaining monosilane by aqueous treatment with hydrochloric acid under atmospheric conditions and without any catalyst. There was no trace of diborane, which is a common source for boron contamination in crude silane.

  10. NbFeSb based p-type half-Heusler for power generation applications

    NASA Astrophysics Data System (ADS)

    Joshi, Giri; He, Ran; Engber, Michael; Samsonidze, Georgy; Pantha, Tej; Dahal, Ekraj; Dahal, Keshab; Yang, Jian; Lan, Yucheng; Kozinsky, Boris; Ren, Zhifeng

    2015-03-01

    We report a peak dimensionless figure-of-merit (ZT) of ~1 at 700 oC in nanostructured p-type Nb0.6Ti0.4FeSb0.95Sn0.05composition. Even though the power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is improved by 25% in comparison to the previously reported p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2, the ZT value is not increased due to a higher thermal conductivity. However, the higher power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition led to a 15% increase in power output of a thermoelectric device in comparison to a device made from the previous best material Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. The n-type material used to make the unicouple device is the best reported nanostructured Hf0.25Zr0.75NiSn0.99Sb0.01 composition with the lowest hafnium (Hf) content. Both the p- and n-type nanostructured samples are prepared by ball milling the arc melted ingot and hot pressing the finely ground powders. Moreover, the raw material cost of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is more than six times lower compared to the cost of the previous best p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. This cost reduction is crucial for these materials to be used in large-scale quantities for vehicle and industrial waste heat recovery applications. DOE:DE-EE0004840.

  11. Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2

    NASA Astrophysics Data System (ADS)

    Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Tsai, Meng-Yen; Pavlidis, Georges; Graham, Samuel; Ready, W. Jud; Vogel, Eric M.

    2016-01-01

    The synthesis of few-layer tungsten diselenide (WSe2) via chemical vapor deposition typically results in highly non-uniform thickness due to nucleation initiated growth of triangular domains. In this work, few-layer p-type WSe2 with wafer-scale thickness and electrical uniformity is synthesized through direct selenization of thin films of e-beam evaporated W on SiO2 substrates. Raman maps over a large area of the substrate show small variations in the main peak position, indicating excellent thickness uniformity across several square centimeters. Additionally, field-effect transistors fabricated from the wafer-scale WSe2 films demonstrate uniform electrical performance across the substrate. The intrinsic field-effect mobility of the films at a carrier concentration of 3 × 1012 cm-2 is 10 cm2 V-1 s-1. The unprecedented uniformity of the WSe2 on wafer-scale substrates provides a substantial step towards producing manufacturable materials that are compatible with conventional semiconductor fabrication processes.

  12. Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.

    PubMed

    Campbell, Philip M; Tarasov, Alexey; Joiner, Corey A; Tsai, Meng-Yen; Pavlidis, Georges; Graham, Samuel; Ready, W Jud; Vogel, Eric M

    2016-01-28

    The synthesis of few-layer tungsten diselenide (WSe2) via chemical vapor deposition typically results in highly non-uniform thickness due to nucleation initiated growth of triangular domains. In this work, few-layer p-type WSe2 with wafer-scale thickness and electrical uniformity is synthesized through direct selenization of thin films of e-beam evaporated W on SiO2 substrates. Raman maps over a large area of the substrate show small variations in the main peak position, indicating excellent thickness uniformity across several square centimeters. Additionally, field-effect transistors fabricated from the wafer-scale WSe2 films demonstrate uniform electrical performance across the substrate. The intrinsic field-effect mobility of the films at a carrier concentration of 3 × 10(12) cm(-2) is 10 cm(2) V(-1) s(-1). The unprecedented uniformity of the WSe2 on wafer-scale substrates provides a substantial step towards producing manufacturable materials that are compatible with conventional semiconductor fabrication processes. PMID:26743173

  13. Sol-gel production of p-type ZnO thin film by using sodium doping

    NASA Astrophysics Data System (ADS)

    Bu, Ian Y. Y.

    2016-08-01

    In this study, ZnO:Na thin films doped with 1-5 at.% of Na were synthesized on glass substrates by the sol-gel deposition technique. The morphology and optoelectronic properties of the thin films were characterized by using the environmental scanning electron microscope (SEM), X-ray diffraction (XRD), UV-Vis spectroscopy and Hall effect measurements. The SEM images and XRD pattern both indicated a substantial change in the film structure as the Na content increases due to the oversupply of the OH- ions in the initial precursor solution. UV-Vis spectroscopy measurements revealed that the increase in Na doping resulted in the decreases of the optical transmittance and the optical band gap due to the formation recombination centers. Hall effect measurements confirmed that the ZnO:Na films doped with >2 at.% of Na are stable with p-type conduction behaviour. As a demonstration, a ZnO-based junction was fabricated using the synthesized ZnO:Na/ZnO thin films on indium tin oxide glass substrates.

  14. Photoconductivity of organic polymer films doped with porous silicon nanoparticles and ionic polymethine dyes

    SciTech Connect

    Davidenko, N. A. Skrichevsky, V. A.; Ishchenko, A. A.; Karlash, A. Yu.; Mokrinskaya, E. V.

    2009-05-15

    Features of electrical conductivity and photoconductivity of polyvinylbutyral films containing porous silicon nanoparticles and similar films doped with cationic and anionic polymethine dyes are studied. Sensitization of the photoelectric effect by dyes with different ionicities in films is explained by the possible photogeneration of holes and electrons from dye molecules and the intrinsic bipolar conductivity of porous silicon nanoparticles. It is assumed that the electronic conductivity in porous silicon nanoparticles is higher in comparison with p-type conductivity.

  15. InP nanowire p-type doping via Zinc indiffusion

    NASA Astrophysics Data System (ADS)

    Haggren, Tuomas; Otnes, Gaute; Mourão, Renato; Dagyte, Vilgaile; Hultin, Olof; Lindelöw, Fredrik; Borgström, Magnus; Samuelson, Lars

    2016-10-01

    We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350-500 °C for 5-20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm-3 for NWs without post-annealing, and up to 1018 cm-3 for NWs annealed with the Zn3P2 shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.

  16. SrCu2O2: A p-type conductive oxide with wide band gap

    NASA Astrophysics Data System (ADS)

    Kudo, Atsushi; Yanagi, Hiroshi; Hosono, Hideo; Kawazoe, Hiroshi

    1998-07-01

    SrCu2O2 thin films were prepared on SiO2 glass substrates by pulsed laser deposition. The film deposited in O2 atmosphere of 7×10-4 Pa at 573 K showed high optical transmission in visible and near-infrared regions. Potassium was doped at Sr site for substitutional doping. The optical band gap of the K-doped film was estimated to be ˜3.3 eV. The dc electrical conductivity of the K-doped film at 300 K was 4.8×10-2 S cm-1 and the activation energy was 0.10 eV. Positive sign of Seebeck and Hall coefficients demonstrated the p-type conduction of the film. Hole concentration and mobility at 300 K were 6.1×1017cm-3 and 0.46 cm2 V-1 s-1, respectively.

  17. Improved performance of P-type DSCs with a compact blocking layer coated by different thicknesses

    NASA Astrophysics Data System (ADS)

    Ho, Phuong; Bao, Le Quoc; Cheruku, Rajesh; Kim, Jae Hong

    2016-09-01

    The introduction of different thicknesses of a compact NiO blocking layer coating with different spin speeds on FTO and followed by a coating of photoactive NiO electrode for p-type dye-sensitized solar cells ( p-DSCs). This study examined the fabrication of a compact NiO blocking layer by decomposing an ethanolic precursor solution of nickel acetate tetrahydrate. The DCBZ dye used as the photosensitizer for the NiO electrode in the p-DSCs device and their performances have been analyzed. The enhancement of photovoltaic performance and resulted from an increase in the power conversion efficiency ( η). The electrochemical impedance spectroscopy (EIS) measurement demonstrated that charge recombination was suppressed when a compact NiO blocking layer was applied. The results showed that the best p-DSC was achieved by employing 3000 rpm spin-coated process for different times of blocking layer.

  18. Thermoelectric Properties of Sintered n-Type and p-Type Tellurides

    NASA Astrophysics Data System (ADS)

    Hassel, J.; Tervo, J.

    2013-07-01

    Characterization of powder-metallurgically manufactured (Bi x Sb1- x )2(Te y Se1- y )3 thermoelectric materials is presented. The manufacturing methods were spark plasma sintering (SPS) and hot isostatic pressing (HIP). x-Ray diffraction (XRD) and density measurements as well as transport characterization and scanning electron microscopy were performed on the materials. It is shown that both sintering techniques yield reasonable thermoelectric characteristics for p-type ( x = 0.2, y = 1) as well as n-type ( x = 0.95, y = 0.95) materials. Insight into the underlying reasons such as the scattering processes limiting the characteristics is gained by fitting experimental transport data using a theoretical model. The limitations and further optimization issues of our approach in thermoelectric material preparation are discussed.

  19. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

    NASA Astrophysics Data System (ADS)

    Bioud, Youcef A.; Boucherif, Abderraouf; Belarouci, Ali; Paradis, Etienne; Drouin, Dominique; Arès, Richard

    2016-10-01

    We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate.

  20. Improved performance of P-type DSCs with a compact blocking layer coated by different thicknesses

    NASA Astrophysics Data System (ADS)

    Ho, Phuong; Bao, Le Quoc; Cheruku, Rajesh; Kim, Jae Hong

    2016-07-01

    The introduction of different thicknesses of a compact NiO blocking layer coating with different spin speeds on FTO and followed by a coating of photoactive NiO electrode for p-type dye-sensitized solar cells (p-DSCs). This study examined the fabrication of a compact NiO blocking layer by decomposing an ethanolic precursor solution of nickel acetate tetrahydrate. The DCBZ dye used as the photosensitizer for the NiO electrode in the p-DSCs device and their performances have been analyzed. The enhancement of photovoltaic performance and resulted from an increase in the power conversion efficiency (η). The electrochemical impedance spectroscopy (EIS) measurement demonstrated that charge recombination was suppressed when a compact NiO blocking layer was applied. The results showed that the best p-DSC was achieved by employing 3000 rpm spin-coated process for different times of blocking layer.

  1. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Ambade, Swapnil B.; Mane, R. S.; Kale, S. S.; Sonawane, S. H.; Shaikh, Arif V.; Han, Sung-Hwan

    2006-12-01

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu 2- xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm 2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  2. Improved thermoelectric efficiency in p-type ZnSb through Zn deficiency

    NASA Astrophysics Data System (ADS)

    Guo, Qilong; Luo, Sijun

    2015-12-01

    We herein report a feasible approach to improve the thermoelectric performance of p-type ZnSb compound by Zn content regulation. It is found that Zn vacancies formed by Zn deficiency not only efficiently enhance the electrical conductivity due to the improved hole concentration but also markedly lower the lattice thermal conductivity on account of the reinforced point defect scattering of phonons. The ZnSb compound with a nominal 3 mol.% Zn deficiency shows a maximum thermoelectric figure of merit ZT of 0.8 at 700 K which is a 60% improvement over the pristine sample. The strategies of further enhancing the performance of ZnSb-based material have been discussed.

  3. Studies of minority carrier diffusion length increase in p-type ZnO:Sb

    SciTech Connect

    Lopatiuk-Tirpak, O.; Chernyak, L.; Xiu, F. X.; Liu, J. L.; Jang, S.; Ren, F.; Pearton, S. J.; Gartsman, K.; Feldman, Y.; Osinsky, A.; Chow, P.

    2006-10-15

    Minority electron diffusion length was measured in p-type, Sb-doped ZnO as a function of temperature using the electron beam induced current technique. A thermally induced increase of electron diffusion length was determined to have an activation energy of 184{+-}10 meV. Irradiation with a low energy (5 kV) electron beam also resulted in an increase of diffusion length with a similar activation energy (219{+-}8 meV). Both phenomena are suggested to involve a Sb{sub Zn}-2V{sub Zn} acceptor complex. Saturation and relaxation dynamics of minority carrier diffusion length are explored. Details of a possible mechanism for diffusion length increase are presented.

  4. P-type InGaN across the entire alloy composition range

    SciTech Connect

    Wang, K.; Araki, T.; Katsuki, T.; Yu, K. M.; Mayer, M. A.; Ager, J. W. III; Walukiewicz, W.; Alarcon-Llado, E.; Nanishi, Y.

    2013-03-11

    A systematic investigation on Mg doped and undoped InGaN epilayers grown by plasma-assisted molecular beam epitaxy has been conducted. Single phase InGaN alloys across the entire composition range were synthesized and Mg was doped into In{sub x}Ga{sub 1-x}N (0.1 {<=} x {<=} 0.88) epilayers up to {approx}10{sup 20}/cm{sup 3}. Hall effect, thermopower, and electrochemical capacitance voltage experimental results demonstrate the realization of p-type InGaN across the entire alloy composition range for properly Mg doped InGaN. Hole densities have been measured or estimated to be in the lower {approx}10{sup 18}/cm{sup 3} range when the net acceptor concentrations are in the lower {approx}10{sup 19}/cm{sup 3} range across the composition range.

  5. Formation and annealing of radiation defects in tin-doped p-type germanium crystals

    SciTech Connect

    Litvinov, V. V. Petukh, A. N.; Pokotilo, Ju. M.; Markevich, V. P.; Lastovskii, S. B.

    2012-05-15

    The effect of tin on the formation and annealing of radiation defects in p-type germanium crystals irradiated with 6-MeV electrons at a temperature of 80 K is studied. It is shown that acceptor complexes SnV with a hole ionization enthalpy of 0.16 eV are dominant in irradiated Ge:(Sn, Ga) crystals after their heating to a temperature of 300 K. These complexes disappeared as a result of the annealing of irradiated crystals in the temperature range 30-75 Degree-Sign C. Annealing of irradiated crystals at temperatures in the range 110-150 Degree-Sign C brings about the formation of deep-level centers with a donor level at E{sub v} + 0.29 eV; this center is presumably related to a complex consisting of a tin atom and an interstitial gallium atom.

  6. Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds

    SciTech Connect

    Aminorroaya Yamini, Sima E-mail: jsnyder@caltech.edu; Dou, Shi Xue; Mitchell, David R. G.; Wang, Heng; Gibbs, Zachary M.; Pei, Yanzhong; Snyder, G. Jeffrey E-mail: jsnyder@caltech.edu

    2015-05-15

    The electrical resistivity curves for binary phase compounds of p-type lead chalcogenide (PbTe){sub (0.9−x)}(PbSe){sub 0.1}(PbS){sub x,} (x = 0.15, 0.2, 0.25), which contain PbS-rich secondary phases, show different behaviour on heating and cooling between 500-700 K. This is contrast to single phase compounds which exhibit similar behaviour on heating and cooling. We correlate these anomalies in the electrical resistivities of multiphase compounds to the variation in phase composition at high temperatures. The inhomogeneous distribution of dopants between the matrix and secondary phase is found to be crucial in the electronic transport properties of the multiphase compounds. These results can lead to further advances in designing composite Pb-chalcogenides with high thermoelectric performance.

  7. Phonon bottleneck in p-type Ge/Si quantum dots

    SciTech Connect

    Yakimov, A. I.; Kirienko, V. V.; Armbrister, V. A.; Bloshkin, A. A.; Dvurechenskii, A. V.

    2015-11-23

    We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck.

  8. Computational approaches for classification and prediction of P-type ATPase substrate specificity in Arabidopsis.

    PubMed

    Zinati, Zahra; Alemzadeh, Abbas; KayvanJoo, Amir Hossein

    2016-01-01

    As an extended gamut of integral membrane (extrinsic) proteins, and based on their transporting specificities, P-type ATPases include five subfamilies in Arabidopsis, inter alia, P4ATPases (phospholipid-transporting ATPase), P3AATPases (plasma membrane H(+) pumps), P2A and P2BATPases (Ca(2+) pumps) and P1B ATPases (heavy metal pumps). Although, many different computational methods have been developed to predict substrate specificity of unknown proteins, further investigation needs to improve the efficiency and performance of the predicators. In this study, various attribute weighting and supervised clustering algorithms were employed to identify the main amino acid composition attributes, which can influence the substrate specificity of ATPase pumps, classify protein pumps and predict the substrate specificity of uncharacterized ATPase pumps. The results of this study indicate that both non-reduced coefficients pertaining to absorption and Cys extinction within 280 nm, the frequencies of hydrogen, Ala, Val, carbon, hydrophilic residues, the counts of Val, Asn, Ser, Arg, Phe, Tyr, hydrophilic residues, Phe-Phe, Ala-Ile, Phe-Leu, Val-Ala and length are specified as the most important amino acid attributes through applying the whole attribute weighting models. Here, learning algorithms engineered in a predictive machine (Naive Bays) is proposed to foresee the Q9LVV1 and O22180 substrate specificities (P-type ATPase like proteins) with 100 % prediction confidence. For the first time, our analysis demonstrated promising application of bioinformatics algorithms in classifying ATPases pumps. Moreover, we suggest the predictive systems that can assist towards the prediction of the substrate specificity of any new ATPase pumps with the maximum possible prediction confidence. PMID:27186030

  9. p-type Ge cyclotron-resonance laser: Theory and experiment

    NASA Astrophysics Data System (ADS)

    Pfeffer, P.; Zawadzki, W.; Unterrainer, K.; Kremser, C.; Wurzer, C.; Gornik, E.; Murdin, B.; Pidgeon, C. R.

    1993-02-01

    p-type germanium in crossed magnetic and electric fields is used as a continuously tunable laser source in the far infrared. To describe magneto-optical transitions responsible for the laser action, we use the complete version of the Pidgeon and Brown model, which accounts for the nonparabolicity and nonsphericity of the Γ8 valence bands in Ge. It is demonstrated that both features are of importance in the correct assignment of the transitions. Also, the heating effects in the light-hole Landau levels are estimated theoretically. The calculations are performed for magnetic fields B∥[110] and B∥[111]. We compare our theoretical results to experimental work in which we are able to achieve laser action in a tuning range from 28 to 76 cm-1 by varying the magnetic field between 1.4 and 3.7 T. The laser output consists of a single line having a width of 0.25 cm-1 and a maximum power of about 300 mW for a pulsewidth of 1 μsec. Hall measurements are performed on p-type Ge samples with the same configuration as that of the laser crystals in order to determine the effective electric fields involved in the laser action. It is shown that the effective fields differ considerably from the applied fields. We conclude that the laser action, for B∥[110], at low magnetic fields (B<2.7 T) is governed by the 2-3 transition in the b set of light holes, while the action at high fields (B>2.8 T) is governed by the light-hole transition 0-1 in the same set. This agrees with estimations of the population inversion determined by other authors.

  10. Glucose-assisted reduction achieved transparent p-type cuprous oxide thin film by a solution method

    NASA Astrophysics Data System (ADS)

    Nie, Sha; Sun, Jian; Gong, Hao; Chen, Zequn; Huang, Yifei; Xu, Jianmei; Zhao, Ling; Zhou, Wei; Wang, Qing

    2016-08-01

    The fabrication of p-type cuprous oxide thin film via a cheap and simple chemical method has been known as challenging. We first find that glucose can assist reduce Cu to a lower valence state in the preparation of cuprous oxide films by the sol-gel method. By first adding glucose in the sol as reducing agent, oxidation from the oxygen in the environment is limited and transparent p-type cuprous oxide films are eventually achieved under optimized experimental conditions. We have developed a p-type cuprous oxide thin film with an optimal Hall mobility of ∼8 cm2/Vs and an optical transmittance of 78%.

  11. Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study

    NASA Astrophysics Data System (ADS)

    Tea, E.; Hin, C.

    In this work, we provide a detailed analysis of phosphorene performance as n-type and p-type active materials. The study is based on first principles calculation of phosphorene electronic structure, and resulting electron and hole scattering rates and lifetimes. Emphasis is put on extreme regimes commonly found in semiconductor devices, i.e. high electric fields and heavy doping, where impact ionization and Auger recombination can occur. We found that electron-initiated impact ionization is weaker than the hole-initiated process, when compared to carrier-phonon interaction rates, suggesting resilience to impact ionization initiated breakdown. Moreover, calculated minority electron lifetimes are limited by radiative recombination only, not by Auger processes, suggesting that phosphorene could achieve good quantum efficiencies in optoelectronic devices. The provided scattering rates and lifetimes are critical input data for the modeling and understanding of phosphorene-based device physics.

  12. Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study.

    PubMed

    Tea, E; Hin, C

    2016-08-10

    In this work, we provide a detailed analysis of phosphorene's performance as an n-type and p-type active material. This study is based on first principles calculations of the phosphorene electronic structure, and the resulting electron and hole scattering rates and lifetimes. Emphasis is put on extreme regimes commonly found in semiconductor devices, i.e. high electric fields and heavy doping, where impact ionization and Auger recombination can occur. We found that electron-initiated impact ionization is weaker than the hole-initiated process, when compared to carrier-phonon interaction rates, suggesting resilience to impact ionization initiated breakdown. Moreover, calculated minority electron lifetimes are limited by radiative recombination only, not by Auger processes, suggesting that phosphorene could achieve good quantum efficiencies in optoelectronic devices. The provided scattering rates and lifetimes are critical input data for the modeling and understanding of phosphorene-based device physics.

  13. Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study.

    PubMed

    Tea, E; Hin, C

    2016-08-10

    In this work, we provide a detailed analysis of phosphorene's performance as an n-type and p-type active material. This study is based on first principles calculations of the phosphorene electronic structure, and the resulting electron and hole scattering rates and lifetimes. Emphasis is put on extreme regimes commonly found in semiconductor devices, i.e. high electric fields and heavy doping, where impact ionization and Auger recombination can occur. We found that electron-initiated impact ionization is weaker than the hole-initiated process, when compared to carrier-phonon interaction rates, suggesting resilience to impact ionization initiated breakdown. Moreover, calculated minority electron lifetimes are limited by radiative recombination only, not by Auger processes, suggesting that phosphorene could achieve good quantum efficiencies in optoelectronic devices. The provided scattering rates and lifetimes are critical input data for the modeling and understanding of phosphorene-based device physics. PMID:27479904

  14. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  15. Electrical characteristics of amorphous iron-tungsten contacts on silicon

    NASA Technical Reports Server (NTRS)

    Finetti, M.; Pan, E. T.-S.; Nicolet, M.-A.; Suni, I.

    1983-01-01

    The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities of 1 x 10 to the -7th and 2.8 x 10 to the -6th were measured on n(+) and p(+) silicon, respectively. These values remain constant after thermal treatment up to at least 500 C. A barrier height of 0.61 V was measured on n-type silicon.

  16. Solar-grade silicon substrates by a powder-to-ribbon process

    NASA Astrophysics Data System (ADS)

    Norman, C. E.; Absi, E. M.; Thomas, R. E.

    1985-06-01

    A new technique for producing silicon ribbons for solar-cell substrates is described. The process begins with inexpensive, 98 percent pure silicon that is crushed and acid leached to raise the purity to 99.9 percent. This powder is spread on a graphite plate and electron-beam annealed to form a flat, self-supporting 'preribbon'. After removal of the graphite and unmelted powder, the preribbon is given a second electron-beam scan that recrystallizes the silicon into a smooth polycrystalline ribbon. This zone melting further improves the purity to over 99.99 percent. Ribbons 0.4 mm thick and up to 16 mm wide were produced in this initial work. The ribbons are p-type, 0.07 ohm-cm and have long crystals about 1 mm wide. Electron-diffusion lengths of 20-30 microns were measured. Calculations indicate that solar-cell efficiencies up to 13 percent should be possible. If the process can be scaled up and automated, the cost of volume production could be as low as 43 cents/W. It is concluded that the process has the potential for achieving low-cost 'solar-grade' substrates and has advantages over other processes. Further work is planned.

  17. Sputtering deposition of P-type SnO films with SnO₂ target in hydrogen-containing atmosphere.

    PubMed

    Hsu, Po-Ching; Hsu, Chao-Jui; Chang, Ching-Hsiang; Tsai, Shiao-Po; Chen, Wei-Chung; Hsieh, Hsing-Hung; Wu, Chung-Chih

    2014-08-27

    In this work, we had investigated sputtering deposition of p-type SnO using the widely used and robust SnO2 target in a hydrogen-containing reducing atmosphere. The effects of the hydrogen-containing sputtering gas on structures, compositions, optical, and electrical properties of deposited SnOx films were studied. Results show that polycrystalline and SnO-dominant films could be readily obtained by carefully controlling the hydrogen gas ratio in the sputtering gas and the extent of reduction reaction. P-type conductivity was unambiguously observed for SnO-dominant films with traceable Sn components, exhibiting a p-type Hall mobility of up to ∼3 cm(2) V(-1) s(-1). P-type SnO thin-film transistors using such SnO-dominant films were also demonstrated.

  18. Mechanisms for p -type behavior of ZnO, Zn1 -xMgxO , and related oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Urban, Daniel F.; Körner, Wolfgang; Elsässer, Christian

    2016-08-01

    The possibilities of turning intrinsically n -type oxide semiconductors like ZnO and Zn1 -xMgxO into p -type materials are investigated. Motivated by recent experiments on Zn1 -xMgxO doped with nitrogen, we analyze the electronic defect levels of point defects NO,vZn, and NO-vZn pairs in ZnO and Zn1 -xMgxO by means of self-interaction-corrected density functional theory calculations. We show how the interplay of defects can lead to shallow acceptor defect levels, although the levels of individual point defects NO are too deep in the band gap to be responsible for p -type conduction. We relate our results to p -type conduction paths at grain boundaries seen in polycrystalline ZnO and develop an understanding of a p -type mechanism which is common to ZnO, Zn1 -xMgxO , and related materials.

  19. First-principles prediction of a promising p-type transparent conductive material CsGeCl3

    NASA Astrophysics Data System (ADS)

    Huang, Dan; Zhao, Yu-Jun; Ju, Zhi-Ping; Gan, Li-Yong; Chen, Xin-Man; Li, Chang-Sheng; Yao, Chun-mei; Guo, Jin

    2014-04-01

    Most reported p-type transparent conductive materials are Cu-based compounds such as CuAlO2 and CuCrO2. Here, we report that compounds based on ns2 cations with low binding energy can also possess high valence band maximum, which is crucial for the p-type doping according to the doping limit rules. In particular, CsGeCl3, a compound with valence band maximum from ns2 cations, is predicted as a promising p-type transparent conductive material by first-principles calculations. Our results show that the p-type defect Ge vacancy dominates its intrinsic defects with a shallow transition level, and the calculated hole effective masses are low in CsGeCl3.

  20. Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski silicon

    SciTech Connect

    Nampalli, N. Hallam, B.; Chan, C.; Abbott, M.; Wenham, S.

    2015-04-27

    This study demonstrates that the presence of a hydrogen source during fast-firing is critical to the regeneration of B-O defects and that is it not a pure thermally based mechanism or due to plasma exposure. Boron-doped p-type wafers were fired with and without hydrogen-rich silicon nitride (SiN{sub x}:H) films present during the fast-firing process. After an initial light-induced degradation step, only wafers fired with the SiN{sub x}:H films present were found to undergo permanent and complete recovery of lifetime during subsequent illuminated annealing. In comparison, wafers fired bare, i.e., without SiN{sub x}:H films present during firing, were found to demonstrate no permanent recovery in lifetime. Further, prior exposure to hydrogen-rich plasma processing was found to have no impact on permanent lifetime recovery in bare-fired wafers. This lends weight to a hydrogen-based model for B-O defect passivation and casts doubt on the role of non-hydrogen species in the permanent passivation of B-O defects in commercial-grade p-type Czochralski silicon wafers.

  1. High-Resolution p-Type Metal Oxide Semiconductor Nanowire Array as an Ultrasensitive Sensor for Volatile Organic Compounds.

    PubMed

    Cho, Soo-Yeon; Yoo, Hae-Wook; Kim, Ju Ye; Jung, Woo-Bin; Jin, Ming Liang; Kim, Jong-Seon; Jeon, Hwan-Jin; Jung, Hee-Tae

    2016-07-13

    The development of high-performance volatile organic compound (VOC) sensor based on a p-type metal oxide semiconductor (MOS) is one of the important topics in gas sensor research because of its unique sensing characteristics, namely, rapid recovery kinetics, low temperature dependence, high humidity or thermal stability, and high potential for p-n junction applications. Despite intensive efforts made in this area, the applications of such sensors are hindered because of drawbacks related to the low sensitivity and slow response or long recovery time of p-type MOSs. In this study, the VOC sensing performance of a p-type MOS was significantly enhanced by forming a patterned p-type polycrystalline MOS with an ultrathin, high-aspect-ratio (∼25) structure (∼14 nm thickness) composed of ultrasmall grains (∼5 nm size). A high-resolution polycrystalline p-type MOS nanowire array with a grain size of ∼5 nm was fabricated by secondary sputtering via Ar(+) bombardment. Various p-type nanowire arrays of CuO, NiO, and Cr2O3 were easily fabricated by simply changing the sputtering material. The VOC sensor thus fabricated exhibited higher sensitivity (ΔR/Ra = 30 at 1 ppm hexane using NiO channels), as well as faster response or shorter recovery time (∼30 s) than that of previously reported p-type MOS sensors. This result is attributed to the high resolution and small grain size of p-type MOSs, which lead to overlap of fully charged zones; as a result, electrical properties are predominantly determined by surface states. Our new approach may be used as a route for producing high-resolution MOSs with particle sizes of ∼5 nm within a highly ordered, tall nanowire array structure.

  2. Carrier transport mechanism in the SnO2:F/p-type a-Si:H heterojunction

    NASA Astrophysics Data System (ADS)

    Cannella, G.; Principato, F.; Foti, M.; Di Marco, S.; Grasso, A.; Lombardo, S.

    2011-07-01

    We characterize SnO2:F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO2:F/p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for |V|<0.1V and have a super-linear behavior (power law) for |V|<0.1V. The structure can be modeled as two diodes back to back connected so that the main current transport mechanisms are due to the reverse current of the diodes. To explain the measured C-V curves, the capacitance of the heterostructure is modeled as the series connection of the depletion capacitances of the two back to back connected SnO2:F/p-type a-Si:H and Mo/p-type a-Si:H junctions. We simulated the reverse I-V curves of the SnO2:F/p-type a-Si:H heterojunction at different temperatures by using the simulation software SCAPS 2.9.03. In the model the main transport mechanism is generation of holes enhanced by tunneling by acceptor-type interface defects with a trap energy of 0.4 eV above the valence bandedge of the p-type a-Si:H layer and with a density of 4.0 × 1013 cm-2. By using I-V simulations and the proposed C-V model the built-in potential (Vbi) of the SnO2:F/p-type a-Si:H (0.16 V) and p-type a-Si:H/Mo (0.14 V) heterojunctions are extracted and a band diagram of the characterized structure is proposed.

  3. High-Resolution p-Type Metal Oxide Semiconductor Nanowire Array as an Ultrasensitive Sensor for Volatile Organic Compounds.

    PubMed

    Cho, Soo-Yeon; Yoo, Hae-Wook; Kim, Ju Ye; Jung, Woo-Bin; Jin, Ming Liang; Kim, Jong-Seon; Jeon, Hwan-Jin; Jung, Hee-Tae

    2016-07-13

    The development of high-performance volatile organic compound (VOC) sensor based on a p-type metal oxide semiconductor (MOS) is one of the important topics in gas sensor research because of its unique sensing characteristics, namely, rapid recovery kinetics, low temperature dependence, high humidity or thermal stability, and high potential for p-n junction applications. Despite intensive efforts made in this area, the applications of such sensors are hindered because of drawbacks related to the low sensitivity and slow response or long recovery time of p-type MOSs. In this study, the VOC sensing performance of a p-type MOS was significantly enhanced by forming a patterned p-type polycrystalline MOS with an ultrathin, high-aspect-ratio (∼25) structure (∼14 nm thickness) composed of ultrasmall grains (∼5 nm size). A high-resolution polycrystalline p-type MOS nanowire array with a grain size of ∼5 nm was fabricated by secondary sputtering via Ar(+) bombardment. Various p-type nanowire arrays of CuO, NiO, and Cr2O3 were easily fabricated by simply changing the sputtering material. The VOC sensor thus fabricated exhibited higher sensitivity (ΔR/Ra = 30 at 1 ppm hexane using NiO channels), as well as faster response or shorter recovery time (∼30 s) than that of previously reported p-type MOS sensors. This result is attributed to the high resolution and small grain size of p-type MOSs, which lead to overlap of fully charged zones; as a result, electrical properties are predominantly determined by surface states. Our new approach may be used as a route for producing high-resolution MOSs with particle sizes of ∼5 nm within a highly ordered, tall nanowire array structure. PMID:27304752

  4. Growth and Characterization of the p-type Semiconductors Tin Sulfide and Bismuth Copper Oxy Selenide

    NASA Astrophysics Data System (ADS)

    Francis, Jason

    BiCuOSe and SnS are layered, moderate band gap (epsilon G ≈ 1 eV) semiconductors that exhibit intrinsic p type conductivity. Doping of BiCuOSe with Ca results in a slight expansion of the lattice and an increase of the hole concentration from 10 18 cm--3 to greater than 1020 cm --3. The large carrier density in undoped films is the result of copper vacancies. Mobility is unaffected by doping, remaining constant at 1.5 cm2V--1s--1 in both undoped and doped films, because the Bi-O layers serve as the source of carriers, while transport occurs within the Cu-Se layers. Bi possesses a 6s2 lone pair that was expected to hybridize with the oxygen p states at the top of the valence band, resulting in high hole mobility as compared to similar materials such as LaCuOSe, which lack this lone pair. However, both LaCuOSe and BiCuOSe have similar hole mobility. X-ray absorption and emission spectroscopy, combined with density functional theory calculations, reveal that the Bi 6 s states contribute deep within the valence band, forming bonding and anti-bonding states with O 2p at 11 eV and 3 eV below the valence band maximum, respectively. Hence, the Bi lone pair does not contribute at the top of the valence band and does not enhance the hole mobility. The Bi 6p states contribute at the bottom of the conduction band, resulting in a smaller band gap for BiCuOSe than LaCuOSe (1 eV vs. 3 eV). SnS is a potential photovoltaic absorber composed of weakly coupled layers stacked along the long axis. This weak coupling results in the formation of strongly oriented films on amorphous substrates. The optical band gap is 1.2 eV, in agreement with GW calculations. Absorption reaches 105 cm--1 within 0.5 eV of the band gap. The p type conduction arises from energetically favorable tin vacancies. Variation of growth conditions yields carrier densities of 1014 -- 1016 cm--3 and hole mobility of 7 -- 15 cm2V--1s--1. SnS was alloyed with rocksalt CaS, which was predicted to form a rocksalt

  5. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    PubMed

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly. PMID:26789206

  6. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    PubMed

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly.

  7. Defect studies in copper-based p-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Ameena, Fnu

    Among other intrinsic open-volume defects, copper vacancy (VCu) has been theoretically identified as the major acceptor in p-type Cu-based semiconducting transparent oxides, which has potential as low-cost photovoltaic absorbers in semi-transparent solar cells. A series of positron annihilation experiments with pure Cu, Cu2O, and CuO presented strong presence of VCu and its complexes in the copper oxides. The lifetime data also showed that the density of VCu was becoming higher as the oxidation state of Cu increased which was consistent with the decrease in the formation energy of VCu. Doppler broadening measurements further indicated that electrons with low momentum made more contribution to the contributed as pure Cu oxidizes to copper oxides. The metastable defects are known to be generated in Cu2O upon illumination and it has been known to affect the performance of Cu2O-based hetero-junctions used in solar cells. The metastable effect was studied using positron annihilation lifetime spectroscopy and its data showed the change in the defect population upon light exposure and the minimal effect of light-induced electron density increase in the bulk of materials to the average lifetime of the positrons. The change in the defect population is concluded to be related to the dissociation and association of VCu -- V Cu complexes. For example, the shorter lifetime under light was ascribed to the annihilation with smaller size vacancies, which explains the dissociation of the complexes with light illumination. Doppler broadening of the annihilation was independent of light illumination, which suggested that the chemical nature of the defects remained without change upon their dissociation and association -- only the size distribution of copper vacancies varied. The delafossite metal oxides, CuMIIIO2 are emerging wide-bandgap p-type semiconductors. In this research, the formation energies of structural vacancies are calculated using Van Vechten cavity model as an attempt

  8. New segmented p-type germanium detector for neutrino-less double-beta decay

    NASA Astrophysics Data System (ADS)

    King, George Savage, III

    Neutrino-less double-beta decay (0nubetabetabeta - decay) has been selected by the American Physical Society Joint Study of Neutrino Physics, and by the Neutrino Science Advisory Group (NUSAG) as a top priority for consideration by the National Science Foundation and the US Department of Energy. The proposed Majorana 76Ge experiment was recommended as one of the two top projects in the US. It involves five US National Laboratories, nine universities, two Russian Institutes, and two Canadian Institutes. The experiment involves ultra-low background segmented germanium detectors of Ge enriched to 86% in 76Ge. Segmented Ge detectors have always been made from n-type germanium. Accordingly they are very expensive and have a production rate far too low to satisfy the Majorana construction schedule. This research project was successful in designing and producing the first five-segment p-type detector and test cryostat. Experiments performed in our laboratory have produced data that document that the segmentation is superior to the n-type segmented test detector specially made for the Majorana project, while the cost was lower and the production time was shorter. This type of detector is now one of several options for the Majorana experiment detector array modules. Neutrino-less double-beta decay is the only practical way to determine if neutrinos are their own anti particles, and if so the most sensitive way by far to determine the neutrino mass scale. The theoretical issues in neutrino physics and double-beta decay are discussed, the status of the experimental programs is given, as well as a description of the technology for the development of p-type segmented Ge detectors. Data documenting the efficacy of this detector in rejecting background is presented. Whether or not this option is chosen for the Majorana project, this development will be very useful in many projects in particle-astrophysics, nuclear physics, nuclear chemistry, and in national security. The detector

  9. Method for enhancing the solubility of dopants in silicon

    DOEpatents

    Sadigh, Babak; Lenosky, Thomas J.; De La Rubia, Tomas Diaz

    2003-09-30

    A method for enhancing the equilibrium solid solubility of dopants in silicon, germanium and silicon-germanium alloys. The method involves subjecting silicon-based substrate to biaxial or compression strain. It has been determined that boron solubility was largely enhanced (more than 100%) by a compressive bi-axial strain, based on a size-mismatch theory since the boron atoms are smaller than the silicon atoms. It has been found that the large enhancement or mixing properties of dopants in silicon and germanium substrates is primarily governed by their, and to second order by their size-mismatch with the substrate. Further, it has been determined that the dopant solubility enhancement with strain is most effective when the charge and the size-mismatch of the impurity favor the same type of strain. Thus, the solid solubility of small p-type (e.g., boron) as well as large n-type (e.g., arsenic) dopants can be raised most dramatically by appropriate bi-axial (compressive) strain, and that solubility of a large p-type dopant (e.g, indium) in silicon will be raised due to size-mismatch with silicon, which favors tensile strain, while its negative charge prefers compressive strain, and thus the two effects counteract each other.

  10. The Establishment of a Production-ready Manufacturing Process Utilizing Thin Silicon Substrates for Solar Cells

    NASA Technical Reports Server (NTRS)

    Pryor, R. A.

    1979-01-01

    During the months of February and March, work towards the goals of the contract were started as scheduled. The first shipment of thin substrates were received and wafer processing was initiated. The objective of the contract is to investigate, develop and characterize the methods for establishing a production-ready manufacturing process which utilizes thin silicon substrates for solar cells. The thin substrates to be manufactured are three inches diameter, p-type Czochralski wafers of approximately 1 Omega cm resistivity. The wafers are prepared by sawing directly to thickness of 8 mils and 5 mils. To ensure removal of residual saw damage, most substrates are chemically etched to final thicknesses of 7 mils and 4 mils. The thin substrates are used to fabricate solar cells by standard processing techniques.

  11. High-Performance p-Type Black Phosphorus Transistor with Scandium Contact.

    PubMed

    Li, Ling; Engel, Michael; Farmer, Damon B; Han, Shu-Jen; Wong, H-S Philip

    2016-04-26

    A record high current density of 580 μA/μm is achieved for long-channel, few-layer black phosphorus transistors with scandium contacts after 400 K vacuum annealing. The annealing effectively improves the on-state current and Ion/Ioff ratio by 1 order of magnitude and the subthreshold swing by ∼2.5×, whereas Al2O3 capping significantly degrades transistor performances, resulting in 5× lower on-state current and 3× lower Ion/Ioff ratio. The influences of moisture on black phosphorus metal contacts are elucidated by analyzing the hysteresis of 3-20 nm thick black phosphorus transistors with scandium and gold contacts under different conditions: as-fabricated, after vacuum annealing, and after Al2O3 capping. The optimal black phosphorus film thickness for transistors with scandium contacts is found to be ∼10 nm. Moreover, p-type performance is shown in all transistors with scandium contacts, suggesting that the Fermi level is pinned closer to the valence band regardless of the flake thickness.

  12. Raman Spectroscopy Determination of Hole Concentration in p-Type GaSb

    SciTech Connect

    Maslar JE, Hurst WS, Wang CA

    2007-04-05

    Room temperature p-type GaSb bulk coupled mode spectra were measured as a function of hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode scattering than possible with visible wavelength excitation-based systems. A relatively simple spectral model for the electronic contribution to the dielectric function was evaluated for determination of hole concentration from the bulk coupled mode spectra. Optically-derived values for hole concentration were determined by minimizing the sum of the residuals squared between an experimental and simulated spectrum as a function of total hole concentration and a plasmon damping parameter. Hole concentrations obtained from the Raman spectroscopic measurements deviated from the values determined from single field Hall effect measurements that were corrected to account for two band conduction by {approx}20% to {approx}65%. These deviations were attributed to the limitations of the spectral model employed and uncertainties in GaSb materials properties.

  13. High-Performance p-Type Black Phosphorus Transistor with Scandium Contact.

    PubMed

    Li, Ling; Engel, Michael; Farmer, Damon B; Han, Shu-Jen; Wong, H-S Philip

    2016-04-26

    A record high current density of 580 μA/μm is achieved for long-channel, few-layer black phosphorus transistors with scandium contacts after 400 K vacuum annealing. The annealing effectively improves the on-state current and Ion/Ioff ratio by 1 order of magnitude and the subthreshold swing by ∼2.5×, whereas Al2O3 capping significantly degrades transistor performances, resulting in 5× lower on-state current and 3× lower Ion/Ioff ratio. The influences of moisture on black phosphorus metal contacts are elucidated by analyzing the hysteresis of 3-20 nm thick black phosphorus transistors with scandium and gold contacts under different conditions: as-fabricated, after vacuum annealing, and after Al2O3 capping. The optimal black phosphorus film thickness for transistors with scandium contacts is found to be ∼10 nm. Moreover, p-type performance is shown in all transistors with scandium contacts, suggesting that the Fermi level is pinned closer to the valence band regardless of the flake thickness. PMID:27023751

  14. Investigation of the optical and electrical properties of p-type porous GaAs structure

    NASA Astrophysics Data System (ADS)

    Saghrouni, H.; Missaoui, A.; Hannachi, R.; Beji, L.

    2013-12-01

    Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily doped p-type GaAs substrate in a HF:C2H5OH solution. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-structural nature of the porous layer has been demonstrated by X-ray diffraction analysis (XRD) and confirmed by AFM. An estimation of the main size of the GaAs crystallites obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results. The porous p-GaAs samples are characterised by spectroscopic ellipsometry and modulation spectroscopy techniques. The objective of this study is to determine the porosity, refractive index, and thickness. The porosity of GaAs determined by atomic force microscopy confirmed by the value obtained from the spectroscopic ellipsometry. In fact the current-voltage I(V) characteristics of metal-semiconductor Au/p-GaAs are investigated and compared with Au/p-porous GaAs structures. From the forward bias I(V) characteristics of these devices, the main electrical parameters such as ideality factor, barrier height, and series resistance have been determined.

  15. Quasiparticle band structures and thermoelectric transport properties of p-type SnSe

    SciTech Connect

    Shi, Guangsha; Kioupakis, Emmanouil

    2015-02-14

    We used density functional and many-body perturbation theory to calculate the quasiparticle band structures and electronic transport parameters of p-type SnSe both for the low-temperature Pnma and high-temperature Cmcm phases. The Pnma phase has an indirect band gap of 0.829 eV, while the Cmcm has a direct band gap of 0.464 eV. Both phases exhibit multiple local band extrema within an energy range comparable to the thermal energy of carriers from the global extrema. We calculated the electronic transport coefficients as a function of doping concentration and temperature for single-crystal and polycrystalline materials to understand the previous experimental measurements. The electronic transport coefficients are highly anisotropic and are strongly affected by bipolar transport effects at high temperature. Our results indicate that SnSe exhibits optimal thermoelectric performance at high temperature when doped in the 10{sup 19}–10{sup 20 }cm{sup −3} range.

  16. Ferromagnetic ordering of Cr and Fe doped p-type diamond: An ab initio study

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2014-02-21

    Ferromagnetic ordering of transition metal dopants in semiconductors holds the prospect of combining the capabilities of semiconductors and magnetic systems in single hybrid devices for spintronic applications. Various semiconductors have so far been considered for spintronic applications, but low Curie temperatures have hindered room temperature applications. We report ab initio DFT calculations on the stability and magnetic properties of Fe and Cr impurities in diamond, and show that their ground state magnetic ordering and stabilization energies depend strongly on the charge state and type of co-doping. We predict that divacancy Cr{sup +2} and substitutional Fe{sup +1} order ferromagnetically in p-type diamond, with magnetic stabilization energies (and magnetic moment per impurity ion) of 16.9 meV (2.5 μ{sub B}) and 33.3 meV (1.0 μ{sub B}), respectively. These magnetic stabilization energies are much larger than what has been achieved in other semiconductors at comparable impurity concentrations, including the archetypal dilute magnetic semiconductor GaAs:Mn. In addition, substitutional Fe{sup +1} exhibits a strong half-metallic character, with the Fermi level crossing bands in only the spin down channel. These results, combined with diamond’s extreme properties, demonstrate that Cr or Fe dopedp-type diamond may successfully be considered in the search for room temperature spintronic materials.

  17. Enhanced thermoelectric figure of merit of p-type half-Heuslers.

    PubMed

    Yan, Xiao; Joshi, Giri; Liu, Weishu; Lan, Yucheng; Wang, Hui; Lee, Sangyeop; Simonson, J W; Poon, S J; Tritt, T M; Chen, Gang; Ren, Z F

    2011-02-01

    Half-Heuslers would be important thermoelectric materials due to their high temperature stability and abundance if their dimensionless thermoelectric figure of merit (ZT) could be made high enough. The highest peak ZT of a p-type half-Heusler has been so far reported about 0.5 due to the high thermal conductivity. Through a nanocomposite approach using ball milling and hot pressing, we have achieved a peak ZT of 0.8 at 700 °C, which is about 60% higher than the best reported 0.5 and might be good enough for consideration for waste heat recovery in car exhaust systems. The improvement comes from a simultaneous increase in Seebeck coefficient and a significant decrease in thermal conductivity due to nanostructures. The samples were made by first forming alloyed ingots using arc melting and then creating nanopowders by ball milling the ingots and finally obtaining dense bulk by hot pressing. Further improvement in ZT is expected when average grain sizes are made smaller than 100 nm.

  18. Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic

    SciTech Connect

    Verreck, Devin Groeseneken, Guido; Verhulst, Anne S.; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Sorée, Bart

    2014-12-15

    Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In{sub 0.53}Ga{sub 0.47}As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design.

  19. Localization of P-type calcium channels in the central nervous system.

    PubMed

    Hillman, D; Chen, S; Aung, T T; Cherksey, B; Sugimori, M; Llinás, R R

    1991-08-15

    The distribution of the P-type calcium channel in the mammalian central nervous system has been demonstrated immunohistochemically by using a polyclonal specific antibody. This antibody was generated after P-channel isolation via a fraction from funnel-web spider toxin (FTX) that blocks the voltage-gated P channels in cerebellar Purkinje cells. In the cerebellar cortex, immunolabeling to the antibody appeared throughout the molecular layer, while all the other regions were negative. Intensely labeled patches of reactivity were seen on Purkinje cell dendrites, especially at bifurcations; much weaker reactivity was present in the soma and stem segment. Electron microscopic localization revealed labeled patches of plasma membrane on the soma, main dendrites, spiny branchlets, and spines; portions of the smooth endoplasmic reticulum were also labeled. Strong labeling was present in the periglomerular cells of the olfactory bulb and scattered neurons in the deep layer of the entorhinal and pyriform cortices. Neurons in the brainstem, habenula, nucleus of the trapezoid body and inferior olive and along the floor of the fourth ventricle were also labeled intensely. Medium-intensity reactions were observed in layer II pyramidal cells of the frontal cortex, the CA1 cells of the hippocampus, the lateral nucleus of the substantia nigra, lateral reticular nucleus, and spinal fifth nucleus. Light labeling was seen in the neocortex, striatum, and in some brainstem neurons.

  20. p-type doping of MoS{sub 2} thin films using Nb

    SciTech Connect

    Laskar, Masihhur R.; Nath, Digbijoy N.; Lee, Edwin W.; Lee, Choong Hee; Yang, Zihao; Ma, Lu; Wu, Yiying; Kent, Thomas; Mishra, Rohan; Roldan, Manuel A.; Idrobo, Juan-Carlos; Pantelides, Sokrates T.; Pennycook, Stephen J.; Myers, Roberto C.; Rajan, Siddharth

    2014-03-03

    We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS{sub 2}. Niobium was found to act as an efficient acceptor up to relatively high density in MoS{sub 2} films. For a hole density of 3.1 × 10{sup 20} cm{sup −3}, Hall mobility of 8.5 cm{sup 2} V{sup −1} s{sup −1} was determined, which matches well with the theoretically expected values. X-ray diffraction scans and Raman characterization indicated that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. Scanning transmission electron microscope imaging showed ordered crystalline nature of the Nb-doped MoS{sub 2} layers stacked in the [0001] direction. This demonstration of substitutional p-doping in large area epitaxial MoS{sub 2} could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.

  1. Nonpolar a-plane p-type GaN and p-n Junction Diodes

    SciTech Connect

    Chakraborty, Arpan; Xing, H.; Craven, M.D.; Keller, S.; Mates, T.; Speck, J.S.; Baars, S.P. den; Mishra, U.K.

    2004-10-15

    Growth and electrical characteristics of Mg-doped p-type nonpolar (1120) a-plane GaN films, grown on (1102) r-plane sapphire substrates via metalorganic chemical vapor deposition, were investigated as a function of growth rate, the ammonia to trimethylgallium flow ratio (V/III ratio), and the growth temperature. The electrical conductivity of the films exhibited a strong dependence on the growth parameters. Secondary-ion-mass-spectroscopy measurements indicated that more Mg was incorporated at higher growth rate and at lower growth temperatures. The Mg concentration in the films increased linearly with the Mg flow. A maximum hole concentration of 6.8x10{sup 17}cm{sup -3} was achieved at room temperature for a Mg concentration of 7.6x10{sup 19}cm{sup -3}, corresponding to 0.9% ionization. Further increase in the Mg concentration resulted in increased surface roughness as well as a significant decrease in the hole concentration. p-n junction diodes were fabricated using nonpolar a-plane GaN, and the current-voltage characteristics of these diodes showed a sharp turn-on at {approx}3 V.

  2. Spin-lattice relaxation in p-type gallium arsenide single crystals

    NASA Astrophysics Data System (ADS)

    Zerrouati, K.; Fabre, F.; Bacquet, G.; Bandet, J.; Frandon, J.; Lampel, G.; Paget, D.

    1988-01-01

    An optical-pumping technique is used to measure the spin-relaxation time of photogenerated conduction electrons in several p-type GaAs single crystals doped with various amounts of acceptors in the 1.7-300 K temperature range. Our experimental results are compared with those of the literature and with the predictions of the existing theoretical calculations. From about 10 K, the Bir-Aronov-Pikus (BAP) mechanism is found to be relevant for moderately doped (1017-1018 cm-3), up to about 150 K, or degenerate (up to 300 K) semiconductors, using the electronic temperature, deduced from the luminescence spectra, rather than the sample temperature. The D'yakonov-Perel' (DP) process was found to be active above 200 K for moderately doped samples and from about 80 K to room temperature for samples doped in the (1.6-6)×1016-cm-3 acceptor-concentration range. Our original results obtained at liquid-helium temperatures at whatever the doping level cannot be explained either by the DP mechanism or by the BAP process.

  3. Near Field Enhanced Photocurrent Generation in P-type Dye-Sensitized Solar Cells

    PubMed Central

    Xu, Xiaobao; Cui, Jin; Han, Junbo; Zhang, Junpei; Zhang, Yibo; Luan, Lin; Alemu, Getachew; Wang, Zhong; Shen, Yan; Xiong, Dehua; Chen, Wei; Wei, Zhanhua; Yang, Shihe; Hu, Bin; Cheng, Yibing; Wang, Mingkui

    2014-01-01

    Over the past few decades, the field of p-type dye-sensitized solar cell (p-DSSC) devices has undergone tremendous advances, in which Cu-based delafossite nanocrystal is of prime interest. This paper presents an augment of about 87% improvement in photocurrent observed in a particular configuration of organic dye P1 sensitized CuCrO2 delafossite nanocrystal electrode coupled with organic redox shuttle, 1-methy-1H- tetrazole-5-thiolate and its disulfide dimer when Au nanoparticles (NPs, with diameter of about 20 nm) is added into the photocathode, achieving a power convert efficiency of 0.31% (measured under standard AM 1.5 G test conditions). Detailed investigation shows that the local electrical-magnetic field effect, induced by Au NPs among the mesoporous CuCrO2 film, can improve the charge injection efficiency at dye/semiconductor interface, which is responsible for the bulk of the gain in photocurrent. PMID:24492539

  4. Growth of antimony doped P-type zinc oxide nanowires for optoelectronics

    DOEpatents

    Wang, Zhong Lin; Pradel, Ken

    2016-09-27

    In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO.sub.3).sub.2), hexamethylenetetramine (HMTA) and polyethylenemine (800 M.sub.w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C.sub.2H.sub.4O.sub.3) and antimony acetate (Sb(CH.sub.3COO).sub.3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 .mu.m have grown from the ZnO seed layer.

  5. Enhanced p-type conduction of B-doped nanocrystalline diamond films by high temperature annealing

    SciTech Connect

    Gu, S. S.; Hu, X. J.

    2013-07-14

    We report the enhanced p-type conduction with Hall mobility of 53.3 cm{sup 2} V{sup -1} s{sup -1} in B-doped nanocrystalline diamond (NCD) films by 1000 Degree-Sign C annealing. High resolution transmission electronic microscopy, uv, and visible Raman spectroscopy measurements show that a part of amorphous carbon grain boundaries (GBs) transforms to diamond phase, which increases the opportunity of boron atoms located at the GBs to enter into the nano-diamond grains. This phase transition doping is confirmed by the secondary ion mass spectrum depth profile results that the concentration of B atoms in nano-diamond grains increases after 1000 Degree-Sign C annealing. It is also observed that 1000 Degree-Sign C annealing improves the lattice perfection, reduces the internal stress, decreases the amount of trans-polyacetylene, and increases the number or size of aromatic rings in the sp{sup 2}-bonded carbon cluster in B-doped NCD films. These give the contributions to improve the electrical properties of 1000 Degree-Sign C annealed B-doped NCD films.

  6. Observations of exciton and carrier spin relaxation in Be doped p-type GaAs

    SciTech Connect

    Asaka, Naohiro; Harasawa, Ryo; Tackeuchi, Atsushi; Lu, Shulong; Dai, Pan

    2014-03-17

    We have investigated the exciton and carrier spin relaxation in Be-doped p-type GaAs. Time-resolved spin-dependent photoluminescence (PL) measurements revealed spin relaxation behaviors between 10 and 100 K. Two PL peaks were observed at 1.511 eV (peak 1) and 1.497 eV (peak 2) at 10 K, and are attributed to the recombination of excitons bound to neutral Be acceptors (peak 1) and the band-to-acceptor transition (peak 2). The spin relaxation times of both PL peaks were measured to be 1.3–3.1 ns at 10–100 K, and found to originate from common electron spin relaxation. The observed existence of a carrier density dependence of the spin relaxation time at 10–77 K indicates that the Bir-Aronov-Pikus process is the dominant spin relaxation mechanism.

  7. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes.

    PubMed

    Roques, Magali; Wall, Richard J; Douglass, Alexander P; Ramaprasad, Abhinay; Ferguson, David J P; Kaindama, Mbinda L; Brusini, Lorenzo; Joshi, Nimitray; Rchiad, Zineb; Brady, Declan; Guttery, David S; Wheatley, Sally P; Yamano, Hiroyuki; Holder, Anthony A; Pain, Arnab; Wickstead, Bill; Tewari, Rita

    2015-11-01

    Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs). Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites) in host liver and red blood cells, and sporogony (producing sporozoites) in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P)-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei.

  8. High performance p-type NiOx thin-film transistor by Sn doping

    NASA Astrophysics Data System (ADS)

    Lin, Tengda; Li, Xiuling; Jang, Jin

    2016-06-01

    Major obstacles towards power efficient complementary electronics employing oxide thin-film transistors (TFTs) lie in the lack of equivalent well performing p-channel devices. Here, we report a significant performance enhancement of solution-processed p-type nickel oxide (NiOx) TFTs by introducing Sn dopant. The Sn-doped NiOx (Sn-NiOx) TFTs annealed at 280 °C demonstrate substantially improved electrical performances with the increase in the on/off current ratio (Ion/Ioff) by ˜100 times, field-effect mobility (μlin) by ˜3 times, and the decrease in subthreshold swing by half, comparing with those of pristine NiOx TFTs. X-ray photoelectron spectroscopy and X-ray diffraction results confirm that Sn atoms tend to substitute Ni sites and induce more amorphous phase. A decrease in density of states in the gap of NiOx by Sn doping and the shift of Fermi level (EF) into the midgap lead to the improvements of TFT performances. As a result, Sn-NiOx can be a promising material for the next-generation, oxide-based electronics.

  9. Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic

    NASA Astrophysics Data System (ADS)

    Verreck, Devin; Verhulst, Anne S.; Sorée, Bart; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Groeseneken, Guido

    2014-12-01

    Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In0.53Ga0.47As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design.

  10. Flexible Protocrystalline Silicon Solar Cells with Amorphous Buffer Layer

    NASA Astrophysics Data System (ADS)

    Ishikawa, Yasuaki; Schubert, Markus B.

    2006-09-01

    A low deposition temperature of 110 °C is mandatory for directly growing amorphous-silicon-based solar cells on plastic foil. The optimum absorber material at this low temperature is protocrystalline, i.e., right at the transition between amorphous and crystalline silicon. Polyethylene terephtalate foil of 50 μm thickness form the substrate of our flexible p-i-n single-junction cells. We discuss three peculiar processing techniques for achieving the maximum photovoltaic conversion efficiency of flexible low-temperature solar cells. First, we employ an optimized microcrystalline silicon p-type window layer; second, we use protocrystalline silicon for the i-layer; third, we insert an undoped amorphous silicon buffer layer at the p/i interface. The best flexible cells attain power conversion efficiencies of up to 4.9%.

  11. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    PubMed

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO.

  12. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    PubMed

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO. PMID:25835032

  13. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes

    PubMed Central

    Ferguson, David J. P.; Kaindama, Mbinda L.; Brusini, Lorenzo; Joshi, Nimitray; Rchiad, Zineb; Brady, Declan; Guttery, David S.; Wheatley, Sally P.; Yamano, Hiroyuki; Holder, Anthony A.; Pain, Arnab; Wickstead, Bill; Tewari, Rita

    2015-01-01

    Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs). Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites) in host liver and red blood cells, and sporogony (producing sporozoites) in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P)-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei. PMID:26565797

  14. Electron spin relaxation in p-type GaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Zhou, Y.; Jiang, J. H.; Wu, M. W.

    2009-11-01

    We investigate electron spin relaxation in p-type GaAs quantum wells from a fully microscopic kinetic spin Bloch equation approach, with all the relevant scatterings, such as electron-impurity, electron-phonon, electron-electron Coulomb, electron-hole Coulomb and electron-hole exchange (the Bir-Aronov-Pikus (BAP) mechanism) scatterings, explicitly included. Via this approach, we examine the relative importance of the D'yakonov-Perel' (DP) and BAP mechanisms in wide ranges of temperature, hole density, excitation density and impurity density, and present a phase-diagram-like picture showing the parameter regime where the DP or BAP mechanism is more important. It is discovered that in the impurity-free case the temperature regime where the BAP mechanism is more efficient than the DP one is around the hole Fermi temperature for high hole density, regardless of excitation density. However, in the high impurity density case with the impurity density identical to the hole density, this regime is roughly from the electron Fermi temperature to the hole Fermi temperature. Moreover, we predict that for the impurity-free case, in the regime where the DP mechanism dominates the spin relaxation at all temperatures, the temperature dependence of the spin relaxation time (SRT) presents a peak around the hole Fermi temperature, which originates from the electron-hole Coulomb scattering. We also predict that at low temperature, the hole-density dependence of the electron SRT exhibits a double-peak structure in the impurity-free case, whereas it shows first a peak and then a valley in the case of identical impurity and hole densities. These intriguing behaviors are due to the contribution from holes in high subbands.

  15. Photoluminescence study of p-type vs. n-type Ag-doped ZnO films

    SciTech Connect

    Myers, M. A.; Jian, J.; Khranovskyy, V.; Lee, J. H.; Wang, Han; Wang, Haiyan E-mail: hwang00@tamu.edu

    2015-08-14

    Silver doped ZnO films have been grown on sapphire (0001) substrates by pulsed laser deposition. Hall measurements indicate that p-type conductivity is realized for the films deposited at 500 °C and 750 °C. Transmission electron microscopy images show more obvious and higher density of stacking faults (SFs) present in the p-type ZnO films as compared to the n-type films. Top view and cross sectional photoluminescence of the n- and p-type samples revealed free excitonic emission from both films. A peak at 3.314 eV, attributed to SF emission, has been observed only for the n-type sample, while a weak neutral acceptor peak observed at 3.359 eV in the p-type film. The SF emission in the n-type sample suggests localization of acceptor impurities nearby the SFs, while lack of SF emission for the p-type sample indicates the activation of the Ag acceptors in ZnO.

  16. Commissioning and operation of the CDF silicon detector

    SciTech Connect

    S. D'Auria

    2002-01-18

    The CDF-II silicon detector has been partially commissioned and used for taking preliminary physics data. This paper is a report on commissioning and initial operations of the 5.8m{sup 2} silicon detector. This experience can be useful to the large silicon systems that are presently under construction.

  17. N-Type delta Doping of High-Purity Silicon Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

    2005-01-01

    A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

  18. Analysis of Radiation Effects in Silicon using Kinetic Monte Carlo Methods

    DOE PAGESBeta

    Hehr, Brian Douglas

    2014-11-25

    The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. Neutron irradiation can instigate the formation of quasi-stable defect structures, thereby introducing new energy levels into the bandgap that alter carrier lifetimes and give rise to such phenomena as gain degradation in bipolar junction transistors. Normally, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. A kinetic Monte Carlo (KMC) code has been developed to model both thermal and carrier injection annealing of initial defect structures in semiconductor materials.more » The code is employed to investigate annealing in electron-irradiated, p-type silicon as well as the recovery of base current in silicon transistors bombarded with neutrons at the Los Alamos Neutron Science Center (LANSCE) “Blue Room” facility. Our results reveal that KMC calculations agree well with these experiments once adjustments are made, within the appropriate uncertainty bounds, to some of the sensitive defect parameters.« less

  19. Analysis of Radiation Effects in Silicon using Kinetic Monte Carlo Methods

    SciTech Connect

    Hehr, Brian Douglas

    2014-11-25

    The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. Neutron irradiation can instigate the formation of quasi-stable defect structures, thereby introducing new energy levels into the bandgap that alter carrier lifetimes and give rise to such phenomena as gain degradation in bipolar junction transistors. Normally, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. A kinetic Monte Carlo (KMC) code has been developed to model both thermal and carrier injection annealing of initial defect structures in semiconductor materials. The code is employed to investigate annealing in electron-irradiated, p-type silicon as well as the recovery of base current in silicon transistors bombarded with neutrons at the Los Alamos Neutron Science Center (LANSCE) “Blue Room” facility. Our results reveal that KMC calculations agree well with these experiments once adjustments are made, within the appropriate uncertainty bounds, to some of the sensitive defect parameters.

  20. Tuning the formation of p-type defects by peroxidation of CuAlO2 films

    NASA Astrophysics Data System (ADS)

    Luo, Jie; Lin, Yow-Jon; Hung, Hao-Che; Liu, Chia-Jyi; Yang, Yao-Wei

    2013-07-01

    p-type conduction of CuAlO2 thin films was realized by the rf sputtering method. Combining with Hall, X-ray photoelectron spectroscopy, energy dispersive spectrometer, and X-ray diffraction results, a direct link between the hole concentration, Cu vacancy (VCu), and interstitial oxygen (Oi) was established. It is shown that peroxidation of CuAlO2 films may lead to the increased formation probability of acceptors (VCu and Oi), thus, increasing the hole concentration. The dependence of the VCu density on growth conditions was identified for providing a guide to tune the formation of p-type defects in CuAlO2. Understanding the defect-related p-type conductivity of CuAlO2 is essential for designing optoelectronic devices and improving their performance.

  1. Boric acid solution concentration influencing p-type emitter formation in n-type crystalline Si solar cells

    NASA Astrophysics Data System (ADS)

    Singha, Bandana; Singh Solanki, Chetan

    2016-09-01

    Boric acid (BA) is a spin on dopant (BSoD) source which is used to form p+ emitters in n-type c-Si solar cells. High purity boric acid powder (99.99% pure) when mixed with deionized (DI) water can result in high quality p-type emitter with less amount of surface defects. In this work, we have used different concentrations of boric acid solution concentrations to fabricate p-type emitters with sheet resistance values < 90 Ω/□. The corresponding junction depths for the same are less than 500 nm as measured by SIMS analysis. Boron rich layer (BRL), which is considered as detrimental in emitter performance is found to be minimal for BA solution concentration less than 2% and hence useful for p-type emitter formation.

  2. Tuning the formation of p-type defects by peroxidation of CuAlO{sub 2} films

    SciTech Connect

    Luo, Jie; Lin, Yow-Jon; Yang, Yao-Wei; Hung, Hao-Che; Liu, Chia-Jyi

    2013-07-21

    p-type conduction of CuAlO{sub 2} thin films was realized by the rf sputtering method. Combining with Hall, X-ray photoelectron spectroscopy, energy dispersive spectrometer, and X-ray diffraction results, a direct link between the hole concentration, Cu vacancy (V{sub Cu}), and interstitial oxygen (O{sub i}) was established. It is shown that peroxidation of CuAlO{sub 2} films may lead to the increased formation probability of acceptors (V{sub Cu} and O{sub i}), thus, increasing the hole concentration. The dependence of the V{sub Cu} density on growth conditions was identified for providing a guide to tune the formation of p-type defects in CuAlO{sub 2}. Understanding the defect-related p-type conductivity of CuAlO{sub 2} is essential for designing optoelectronic devices and improving their performance.

  3. Fabrication of p-type ZnO nanofibers by electrospinning for field-effect and rectifying devices

    SciTech Connect

    Liu, Shuai; Liu, Shu-Liang; Liu, Ling-Zhi; Liu, Yi-Chen; Long, Yun-Ze; Zhang, Hong-Di; Zhang, Jun-Cheng; Han, Wen-Peng

    2014-01-27

    Ce-doped p-type ZnO nanofibers were synthesized by electrospinning and followed calcinations. The surface morphology, elementary composition, and crystal structure of the nanofibers were investigated. The field effect curve confirms that the resultant Ce-doped ZnO nanofibers are p-type semiconductor. A p-n heterojunction device consisting of Ce-doped p-type ZnO nanofibers and n-type indium tin oxide (ITO) thin film was fabricated on a piece of quartz substrate. The current-voltage (I-V) characteristic of the p-n heterojunction device shows typical rectifying diode behavior. The turn-on voltage appears at about 7 V under the forward bias and the reverse current is impassable.

  4. Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO{sub 2} gate dielectrics

    SciTech Connect

    Samanta, Piyas; Huang, Heng-Sheng; Chen, Shuang-Yuan; Liu, Chuan-Hsi; Cheng, Li-Wei

    2014-02-21

    We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO{sub 2} gate stack in n{sup +}-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric degradation is a composite effect of electron trapping in as-fabricated as well as newly generated neutral traps, resulting a significant amount of stress-induced leakage current and generation of surface states at the Si/SiO{sub 2} interface. Although, a significant amount of interface states are created during PBTS, the threshold voltage (V{sub T}) instability of the HfSiON based pMOS devices is primarily caused by electron trapping and detrapping. It is also shown that PBTS creates both acceptor- and donor-like interface traps via different depassivation mechanisms of the Si{sub 3} ≡ SiH bonds at the Si/SiO{sub 2} interface in pMOS devices. However, the number of donor-like interface traps ΔN{sub it}{sup D} is significantly greater than that of acceptor-like interface traps ΔN{sup A}{sub it}, resulting the PBTS induced net interface traps as donor-like.

  5. Optically initiated silicon carbide high voltage switch

    DOEpatents

    Caporaso, George J.; Sampayan, Stephen E.; Sullivan, James S.; Sanders; David M.

    2011-02-22

    An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  6. Purification and deposition of silicon by an iodide disproportionation reaction

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2002-01-01

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  7. Method for enhancing the solubility of boron and indium in silicon

    DOEpatents

    Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

    2002-01-01

    A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

  8. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    SciTech Connect

    Geissbühler, Jonas Werner, Jérémie; Martin de Nicolas, Silvia; Hessler-Wyser, Aïcha; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan; Barraud, Loris; Despeisse, Matthieu; Nicolay, Sylvain; Ballif, Christophe

    2015-08-24

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

  9. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    NASA Astrophysics Data System (ADS)

    Geissbühler, Jonas; Werner, Jérémie; Martin de Nicolas, Silvia; Barraud, Loris; Hessler-Wyser, Aïcha; Despeisse, Matthieu; Nicolay, Sylvain; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

    2015-08-01

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

  10. Theoretical considerations for Reaction-Formed Silicon Carbide (RFSC) formation by molten silicon infiltration into slurry-derived preforms

    NASA Technical Reports Server (NTRS)

    Behrendt, D. R.; Singh, M.

    1993-01-01

    For reaction-formed silicon carbide (RFSC) ceramics produced by silicon melt infiltration of porous carbon preforms, equations are developed to relate the amount of residual silicon to the initial carbon density. Also, for a slurry derived preform containing both carbon and silicon powder, equations are derived which relate the amount of residual silicon in the RFSC to the relative density of the carbon in the preform and to the amount of silicon powder added to the slurry. For a porous carbon preform that does not have enough porosity to prevent choking-off of the silicon infiltration, these results show that complete silicon infiltration can occur by adding silicon powder to the slurry mixture used to produce these preforms.

  11. Evaluation of transition metal oxide as carrier-selective contacts for silicon heterojunction solar cells

    SciTech Connect

    Ding, L.; Boccard, Matthieu; Holman, Zachary; Bertoni, M.

    2015-04-06

    "Reducing light absorption in the non-active solar cell layers, while enabling the extraction of the photogenerated minority carriers at quasi-Fermi levels are two key factors to improve current generation and voltage, and therefore efficiency of silicon heterojunction solar devices. To address these two critical aspects, transition metal oxide materials have been proposed as alternative to the n- and p-type amorphous silicon used as electron and hole selective contacts, respectively. Indeed, transition metal oxides such as molybdenum oxide, titanium oxide, nickel oxide or tungsten oxide combine a wide band gap typically over 3 eV with a band structure and theoretical band alignment with silicon that results in high transparency to the solar spectrum and in selectivity for the transport of only one carrier type. Improving carrier extraction or injection using transition metal oxide has been a topic of investigation in the field of organic solar cells and organic LEDs; from these pioneering works a lot of knowledge has been gained on materials properties, ways to control these during synthesis and deposition, and their impact on device performance. Recently, the transfer of some of this knowledge to silicon solar cells and the successful application of some metal oxide to contact heterojunction devices have gained much attention. In this contribution, we investigate the suitability of various transition metal oxide films (molybdenum oxide, titanium oxide, and tungsten oxide) deposited either by thermal evaporation or sputtering as transparent hole or electron selective transport layer for silicon solar cells. In addition to systematically characterize their optical and structural properties, we use photoemission spectroscopy to relate compound stoichiometry to band structure and characterize band alignment to silicon. The direct silicon/metal oxide interface is further analyzed by quasi-steady state photoconductance decay method to assess the quality of surface

  12. Emitter formation using laser doping technique on n- and p-type c-Si substrates

    NASA Astrophysics Data System (ADS)

    López, G.; Ortega, P.; Colina, M.; Voz, C.; Martín, I.; Morales-Vilches, A.; Orpella, A.; Alcubilla, R.

    2015-05-01

    In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiCx/a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al2O3) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 Ω cm p- and n-type FZ c-Si substrates respectively are used as dopant sources. Laser power and number of pulses per spot are explored to obtain the optimal electrical behavior of the formed junctions. To assess the quality of the p+ and n+ regions, the junctions are electrically contacted and characterized by means of dark J-V measurements. Additionally, a diluted HF treatment previous to front metallization has been explored in order to know its impact on the junction quality. The results show that fine tuning of the energy pulse is critical while the number of pulses has minor effect. In general the different HF treatments have no impact in the diode electrical behavior except for an increase of the leakage current in n+/p junctions. The high electrical quality of the junctions makes laser doping, using dielectric layers as dopant source, suitable for solar cell applications. Particularly, a potential open circuit voltage of 0.64 V (1 sun) is expected for a finished solar cell.

  13. Rapid Solid-State Metathesis Routes to Nanostructured Silicon-Germainum

    NASA Technical Reports Server (NTRS)

    Kaner, Richard B. (Inventor); Bux, Sabah K. (Inventor); Fleurial, Jean-Pierre (Inventor); Rodriguez, Marc (Inventor)

    2014-01-01

    Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI4) with the germanium based precursors.

  14. Silicon production process evaluations

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for producing silicon from dichlorosilane in a 1,000 MT/yr plant was continued. Progress and status for the chemical engineering analysis of the HSC process are reported for the primary process design engineering activities: base case conditions (85%), reaction chemistry (85%), process flow diagram (60%), material balance (60%), energy balance (30%), property data (30%), equipment design (20%) and major equipment list (10%). Engineering design of the initial distillation column (D-01, stripper column) in the process was initiated. The function of the distillation column is to remove volatile gases (such as hydrogen and nitrogen) which are dissolved in liquid chlorosilanes. Initial specifications and results for the distillation column design are reported including the variation of tray requirements (equilibrium stages) with reflux ratio for the distillation.

  15. Characterization of p-type wide band gap transparent oxide for heterojunction devices

    NASA Astrophysics Data System (ADS)

    Lim, Sang-Hyun

    Transparent p-type CuCr1-xMgxO2 wide band gap oxide semiconductor thin films were deposited over quartz substrates by chemical spray pyrolysis technique using metalloorganic precursors. A mechanism of synthesis of CuCrO2 films involving precursor decomposition, oxidation, and reaction between constituent oxides in the spray deposition process is presented. Crystalline single phase CuCrO2 delafossite structure was dominant in ≥700ºC argon ambient annealed films but the as-deposited films contained spinel CuCr2O4 mixed phases as shown by XRD and XPS studies. Spin-orbital energy ˜9.8eV in Cr 2p electron spectra consistent with Cr3+ valence state and Cr 2p3/2 resolved peaks show mixed valence state on Cr4+ /Cr6+ confirming CuCr1-xMgxO 2 compound phase in the films. Effect of substrate temperature, film thickness, and acceptor Mg2+ doping on crystallographic structure, optical, electrical conductivity and thermoelectric coefficient was investigated. The invariance of the alpha- and increase of the c-lattice parameter with Mg concentration suggests that Mg2+ ions are introduced at the Cr3+ site. Highly transparent ≥80% CuCr 0.93Mg0.07O2 films with direct and indirect optical band gaps 3.08 and 2.58eV for 155 nm and 3.14 and 2.79eV for 305nm thin films, respectively were obtained. Photoluminescence emission bands at 532 and 484nm interpreted to arise from 3d94s1 and 3d 10 Cu+ intra-band transitions. Electrical conductivity of CuCr0.93Mg0.07O 2 films ranged from 0.6-1.0 Scm-1 and exhibits activation energies ˜0.11eV in 300-420K and ˜0.23eV in ≥ 420K region ascribed to activated conduction and grain boundary trap assisted conduction, respectively. Restricted by the Mg solubility, the substituted Mg dopants limited to x≤0.05 are only able to contribute to the optimum hole carrier in the range ˜2-4x1019cm-3 and thus no substantial increase of electrical conductivity could be realized with increased Mg concentration. A major fraction of Mg atoms do not act as

  16. Role of point defects/defect complexes in silicon device processing. Book of abstracts, fourth workshop

    SciTech Connect

    Not Available

    1994-06-01

    The 41 abstracts are arranged into 6 sessions: impurities and defects in commercial substrates: their sources, effects on material yield, and material quality; impurity gettering in silicon: limits and manufacturability of impurity gettering and in silicon solar cells; impurity/defect passivation; new concepts in silicon growth: improved initial quality and thin films; and silicon solar cell design opportunities.

  17. Study of p-type ZnO and MgZnO Thin Films for Solid State Lighting

    SciTech Connect

    Liu, Jianlin

    2015-07-31

    This project on study of p-type ZnO and MgZnO thin films for solid state lighting was carried out by research group of Prof. Jianlin Liu of UCR during the four-year period between August 2011 and July 2015. Tremendous progress has been made on the proposed research. This final report summarizes the important findings.

  18. Optical and electronic properties of delafossite CuBO{sub 2}p-type transparent conducting oxide

    SciTech Connect

    Ruttanapun, Chesta E-mail: krchesta@kmitl.ac.th

    2013-09-21

    CuBO{sub 2} delafossite was prepared by solid state reaction and calcined/sintered at 1005 °C. The optical properties of this p-type transparent conducting oxide were investigated. Its crystal structure, morphology, composition, oxygen decomposition, and optical and electronic properties were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, thermal gravimetric analysis (TGA), ultraviolet-visible-near-infrared (UV-VIS-NIR) and fluorescence spectroscopies, Seebeck coefficient, and electrical conductivity measurements. CuBO{sub 2} delafossite possesses a hexagonal space group R3{sup ¯}m. TGA indicated a weight loss of 10%, which was attributed to excess oxygen. The positive Seebeck coefficient confirmed p-type behavior. Emission at 355 nm indicated a direct band type transition, and the UV-VIS-NIR spectrum indicated an optical direct gap of 3.6 eV. Activation energies for carrier production and electrical conduction were 0.147 and 0.58 eV, respectively, indicating the thermal activation of carriers. CuBO{sub 2} delafossite is a p-type transparent conducting oxide with a wide band gap and may have potential in industrial p-type electrodes.

  19. Engineering a Prototypic P-type ATPase Listeria monocytogenes Ca(2+)-ATPase 1 for Single-Molecule FRET Studies.

    PubMed

    Dyla, Mateusz; Andersen, Jacob Lauwring; Kjaergaard, Magnus; Birkedal, Victoria; Terry, Daniel S; Altman, Roger B; Blanchard, Scott C; Nissen, Poul; Knudsen, Charlotte R

    2016-09-21

    Approximately 30% of the ATP generated in the living cell is utilized by P-type ATPase primary active transporters to generate and maintain electrochemical gradients across biological membranes. P-type ATPases undergo large conformational changes during their functional cycle to couple ATP hydrolysis in the cytoplasmic domains to ion transport across the membrane. The Ca(2+)-ATPase from Listeria monocytogenes, LMCA1, was found to be a suitable model of P-type ATPases and was engineered to facilitate single-molecule FRET studies of transport-related structural changes. Mutational analyses of the endogenous cysteine residues in LMCA1 were performed to reduce background labeling without compromising activity. Pairs of cysteines were introduced into the optimized low-reactivity background, and labeled with maleimide derivatives of Cy3 and Cy5 resulting in site-specifically double-labeled protein with moderate activity. Ensemble and confocal single-molecule FRET studies revealed changes in FRET distribution related to structural changes during the transport cycle, consistent with those observed by X-ray crystallography for the sarco/endoplasmic reticulum Ca(2+) ATPase (SERCA). Notably, the cytosolic headpiece of LMCA1 was found to be distinctly more compact in the E1 state than in the E2 state. Thus, the established experimental system should allow future real-time FRET studies of the structural dynamics of LMCA1 as a representative P-type ATPase. PMID:27501274

  20. Mechanism for doping induced p type C60 using thermally evaporated molybdenum trioxide (MoO3) as a dopant

    NASA Astrophysics Data System (ADS)

    Yang, Jin-Peng; Wang, Wen-Qing; Cheng, Li-Wen; Li, Yan-Qing; Tang, Jian-Xin; Kera, Satoshi; Ueno, Nobuo; Zeng, Xiang-hua

    2016-05-01

    Thermally evaporated molybdenum trioxide (MoO3) doped C60 films, which could change n type features of pristine C60 to form a p type mixed C60 layer, are investigated by x-ray and ultraviolet photoelectron spectroscopy. It is found that C60 HOMO progressively shifts closer to the Fermi level after increased MoO3 doping concentration, and final onset of C60 HOMO is pinned at binding energy of 0.20 eV, indicating the formation of p type C60 films. It is proposed that in charge transfer induced p type C60 formation, due to large electron affinity of MoO3 (6.37 eV), electrons from HOMO of C60 could easily transfer to MoO3 to form cations and therefore increase hole concentration, which could gradually push C60 HOMO to the Fermi level and finally form p type C60 films. Moreover, clear different types of C60 species have been confirmed from UPS spectra in highly doped films.

  1. Patterned growth of p-type MoS2 atomic layers using sol-gel as precursor

    DOE PAGESBeta

    Zheng, Wei; Lin, Junhao; Feng, Wei; Xiao, Kai; Qiu, Yunfeng; Chen, XiaoShuang; Liu, Guangbo; Cao, Wenwu; Pantelides, Sokrates T.; Zhou, Wu; et al

    2016-07-19

    2D layered MoS2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS2 atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS2 atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS2 layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS2 film due to the incomplete reduction of W precursormore » at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Lastly, an atomically thin p–n junction is fabricated by the as-prepared MoS2, which shows strong rectifying behavior.« less

  2. Engineering a Prototypic P-type ATPase Listeria monocytogenes Ca(2+)-ATPase 1 for Single-Molecule FRET Studies.

    PubMed

    Dyla, Mateusz; Andersen, Jacob Lauwring; Kjaergaard, Magnus; Birkedal, Victoria; Terry, Daniel S; Altman, Roger B; Blanchard, Scott C; Nissen, Poul; Knudsen, Charlotte R

    2016-09-21

    Approximately 30% of the ATP generated in the living cell is utilized by P-type ATPase primary active transporters to generate and maintain electrochemical gradients across biological membranes. P-type ATPases undergo large conformational changes during their functional cycle to couple ATP hydrolysis in the cytoplasmic domains to ion transport across the membrane. The Ca(2+)-ATPase from Listeria monocytogenes, LMCA1, was found to be a suitable model of P-type ATPases and was engineered to facilitate single-molecule FRET studies of transport-related structural changes. Mutational analyses of the endogenous cysteine residues in LMCA1 were performed to reduce background labeling without compromising activity. Pairs of cysteines were introduced into the optimized low-reactivity background, and labeled with maleimide derivatives of Cy3 and Cy5 resulting in site-specifically double-labeled protein with moderate activity. Ensemble and confocal single-molecule FRET studies revealed changes in FRET distribution related to structural changes during the transport cycle, consistent with those observed by X-ray crystallography for the sarco/endoplasmic reticulum Ca(2+) ATPase (SERCA). Notably, the cytosolic headpiece of LMCA1 was found to be distinctly more compact in the E1 state than in the E2 state. Thus, the established experimental system should allow future real-time FRET studies of the structural dynamics of LMCA1 as a representative P-type ATPase.

  3. S-type and P-type habitability in stellar binary systems: A comprehensive approach. I. Method and applications

    SciTech Connect

    Cuntz, M.

    2014-01-01

    A comprehensive approach is provided for the study of both S-type and P-type habitability in stellar binary systems, which in principle can also be expanded to systems of higher order. P-type orbits occur when the planet orbits both binary components, whereas in the case of S-type orbits, the planet orbits only one of the binary components with the second component considered a perturbator. The selected approach encapsulates a variety of different aspects, which include: (1) the consideration of a joint constraint, including orbital stability and a habitable region for a putative system planet through the stellar radiative energy fluxes ({sup r}adiative habitable zone{sup ;} RHZ), needs to be met; (2) the treatment of conservative, general, and extended zones of habitability for the various systems as defined for the solar system and beyond; (3) the provision of a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are presented for the kind of system in which S-type and P-type habitability is realized; (4) applications of the attained theoretical approach to standard (theoretical) main-sequence stars. In principle, five different cases of habitability are identified, which are S-type and P-type habitability provided by the full extent of the RHZs; habitability, where the RHZs are truncated by the additional constraint of planetary orbital stability (referred to as ST- and PT-type, respectively); and cases of no habitability at all. Regarding the treatment of planetary orbital stability, we utilize the formulae of Holman and Wiegert as also used in previous studies. In this work, we focus on binary systems in circular orbits. Future applications will also consider binary systems in elliptical orbits and provide thorough comparisons to other methods and results given in the literature.

  4. Epitaxial silicon devices for dosimetry applications

    SciTech Connect

    Bruzzi, M.; Bucciolini, M.; Casati, M.; Menichelli, D.; Talamonti, C.; Piemonte, C.; Svensson, B. G.

    2007-04-23

    A straightforward improvement of the efficiency and long term stability of silicon dosimeters has been obtained with a n{sup +}-p junction surrounded by a guard-ring structure implanted on an epitaxial p-type Si layer grown on a Czochralski substrate. The sensitivity of devices made on 50-{mu}m-thick epitaxial Si degrades by only 7% after an irradiation with 6 MeV electrons up to 1.5 kGy, and shows no significant further decay up to 10 kGy. These results prove the enhanced radiation tolerance and stability of epitaxial diodes as compared to present state-of-the-art Si devices.

  5. Ambipolar quantum dots in intrinsic silicon

    SciTech Connect

    Betz, A. C. Gonzalez-Zalba, M. F.; Podd, G.; Ferguson, A. J.

    2014-10-13

    We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction, leading to higher charge noise in the p-type regime.

  6. Silicon Detectors

    NASA Astrophysics Data System (ADS)

    Sadrozinski, Hartmut

    2014-03-01

    The use of silicon detectors has experienced an exponential growth in accelerator and space based experiments, similar to trends in the semiconductor industry as a whole, usually paraphrased as ``Moore's Law.'' Some of the essentials for this phenomenon will be presented, together with examples of the exciting science results which it enabled. With the establishment of a ``semiconductor culture'' in universities and laboratories around the world, an increased understanding of the sensors results in thinner, faster, more radiation-resistant detectors, spawning an amazing wealth of new technologies and applications, which will be the main subject of the presentation.

  7. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    NASA Astrophysics Data System (ADS)

    Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

    2015-12-01

    This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance-voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 1011 to 1.2 × 1012 cm-2) after light soaking.

  8. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.; Landsberg, P. T.; San, C. T.

    1984-01-01

    A model for bandgap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones, give an agreement between the model and experiments on n- and p-type silicon which is good as far as transport measurements in the 300 K range. The discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent, optical determinations of band gap shrinkage at 5 K.

  9. Silicon film solar cell process

    NASA Technical Reports Server (NTRS)

    Hall, R. B.; Mcneely, J. B.; Barnett, A. M.

    1984-01-01

    The most promising way to reduce the cost of silicon in solar cells while still maintaining performance is to utilize thin films (10 to 20 microns thick) of crystalline silicon. The method of solution growth is being employed to grow thin polycrystalline films of silicon on dissimilar substrates. The initial results indicate that, using tin as the solvent, this growth process only requires operating temperatures in the range of 800 C to 1000 C. Growth rates in the range of 0.4 to 2.0 microns per minute and grain sizes in the range of 20 to 100 microns were achieved on both quartz and coated steel substrates. Typically, an aspect ratio of two to three between the width and the Si grain thickness is seen. Uniform coverage of Si growth on quartz over a 2.5 x 2.5 cm area was observed.

  10. Porous silicon carbide (SiC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1994-01-01

    A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

  11. Development of Highly Conductive Boron-Doped Microcrystalline Silicon Films for Application in Solar Cells

    NASA Astrophysics Data System (ADS)

    Lei, Qing-Song; Wu, Zhi-Meng; Xi, Jian-Ping; Geng, Xin-Hua; Zhao, Ying; Sun, Jian

    We have examined the deposition of highly conductive boron-doped microcrystalline silicon (μc-Si:H) films for application in solar cells. Depositions were conducted in a very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) chamber. In the deposition processes, various substrate temperatures (TS) were applied. Highly conductive p-type microcrystalline silicon films were obtained at substrate temperature lower than 210°C. The factors that affect the conductivity of the films were investigated. Results suggest that the dark conductivity, which was determined by the Hall mobility and carrier concentration, is influenced by the structure. The properties of the films are strongly dependent on the substrate temperature. With TS increasing, the dark conductivity (σd) increases initially; reach the maximum values at certain TS and then decrease. Also, we applied the boron-doped μc-Si:H as p-layers to the solar cells. An efficiency of about 8.5% for a solar cell with μc-Si:H p-layer was obtained.

  12. Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide

    SciTech Connect

    Zhang, Hongliang; Du, Yingge; Papadogianni, Alexandra; Bierwagen, Oliver; Sallis, Shawn; Piper, Louis F. J.; Bowden, Mark E.; Shutthanandan, V.; Sushko, Petr; Chambers, Scott A.

    2015-09-16

    Transparent conducting oxides (TCOs) constitute a unique class of materials which combine the seemingly mutually exclusive properties of electrical conductivity and optical transparency in a single material. TCOs are useful for a wide range of applications including solar cells, displays, light emitting diodes and transparent electronics. Simple post-transition metal oxides such as ZnO, In2O3 and SnO2 are wide gap insulators in which the ionic character generates an oxygen 2p-derived valence band (VB) and a metal s-derived conduction band (CB), resulting in large optical band gaps (>3.0 eV) and excellent n-type conductivity when donor doped. In contrast, the development of efficient p-type TCOs remains a global materials challenge. Converting n-type oxides to p-type analogs by acceptor doping is extremely difficult and these materials display poor conductivity.

  13. Gas sensing properties and p-type response of ALD TiO2 coated carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Marichy, Catherine; Donato, Nicola; Latino, Mariangela; Willinger, Marc Georg; Tessonnier, Jean-Philippe; Neri, Giovanni; Pinna, Nicola

    2015-01-01

    Amorphous titanium dioxide-coated carbon nanotubes (CNTs) were prepared by atomic layer deposition (ALD) and investigated as sensing layers for resistive NO2 and O2 gas sensors. By varying ALD process conditions and CNT structure, heterostructures with different metal oxide grain size, morphology and coating thickness were synthesized. Higher responses were observed with homogeneous and continuous 5.5 nm thick films onto CNTs at an operating temperature of 150 °C, while CNTs decorated with either discontinuous film or TiO2 nanoparticles showed a weak response close to the one of device made of bare CNTs. An unexpected p-type behavior in presence of the target gas was also noticed, independently of the metal oxide morphology and thickness. Based on previous works, hypotheses were made in order to explain the p-type behavior of TiO2/CNT sensors.

  14. Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

    SciTech Connect

    Yang, Jing; Zhao, Degang Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Zhang, Y. T.; Du, G. T.

    2015-03-15

    The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg{sub Ga} acceptors and passivating donor defects. A decrease in p-type resistivity when O{sub 2} is introduced during the postannealing process is attributed to the fact that annealing in an O{sub 2}-containing environment can enhance the dissociation of Mg{sub Ga}-H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donor species and passivate them, leading to the positive effect of reduced compensation.

  15. Facile Surfactant-Free Synthesis of p-Type SnSe Nanoplates with Exceptional Thermoelectric Power Factors.

    PubMed

    Han, Guang; Popuri, Srinivas R; Greer, Heather F; Bos, Jan-Willem G; Zhou, Wuzong; Knox, Andrew R; Montecucco, Andrea; Siviter, Jonathan; Man, Elena A; Macauley, Martin; Paul, Douglas J; Li, Wen-Guang; Paul, Manosh C; Gao, Min; Sweet, Tracy; Freer, Robert; Azough, Feridoon; Baig, Hasan; Sellami, Nazmi; Mallick, Tapas K; Gregory, Duncan H

    2016-05-23

    A surfactant-free solution methodology, simply using water as a solvent, has been developed for the straightforward synthesis of single-phase orthorhombic SnSe nanoplates in gram quantities. Individual nanoplates are composed of {100} surfaces with {011} edge facets. Hot-pressed nanostructured compacts (Eg ≈0.85 eV) exhibit excellent electrical conductivity and thermoelectric power factors (S(2) σ) at 550 K. S(2) σ values are 8-fold higher than equivalent materials prepared using citric acid as a structure-directing agent, and electrical properties are comparable to the best-performing, extrinsically doped p-type polycrystalline tin selenides. The method offers an energy-efficient, rapid route to p-type SnSe nanostructures. PMID:27094703

  16. Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

    PubMed

    Boland, Jessica L; Casadei, Alberto; Tütüncüoglu, Gözde; Matteini, Federico; Davies, Christopher L; Jabeen, Fauzia; Joyce, Hannah J; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

    2016-04-26

    Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18) cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers.

  17. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    NASA Astrophysics Data System (ADS)

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-08-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

  18. The Use of Metal Fluoride Compounds as Phosphate Analogs for Understanding the Structural Mechanism in P-type ATPases.

    PubMed

    Danko, Stefania J; Suzuki, Hiroshi

    2016-01-01

    The membrane-bound protein family, P-type ATPases, couples ATP hydrolysis with substrate transport across the membrane and forms an obligatory auto-phosphorylated intermediate in the transport cycle. The metal fluoride compounds, BeF x , AlF x , and MgF x , as phosphate analogs stabilize different enzyme structural states in the phosphoryl transfer/hydrolysis reactions, thereby fixing otherwise short-lived intermediate and transient structural states and enabling their biochemical and atomic-level crystallographic studies. The compounds thus make an essential contribution for understanding of the ATP-driven transport mechanism. Here, with a representative member of P-type ATPase, sarco(endo)plasmic reticulum Ca(2+)-ATPase (SERCA), we describe the method for their binding and for structural and functional characterization of the bound states, and their assignments to states occurring in the transport cycle. PMID:26695034

  19. Strong compensation hinders the p-type doping of ZnO: a glance over surface defect levels

    NASA Astrophysics Data System (ADS)

    Huang, B.

    2016-07-01

    We propose a surface doping model of ZnO to elucidate the p-type doping and compensations in ZnO nanomaterials. With an N-dopant, the effects of N on the ZnO surface demonstrate a relatively shallow acceptor level in the band gap. As the dimension of the ZnO materials decreases, the quantum confinement effects will increase and render the charge transfer on surface to influence the shifting of Fermi level, by evidence of transition level changes of the N-dopant. We report that this can overwhelm the intrinsic p-type conductivity and transport of the ZnO bulk system. This may provide a possible route of using surface doping to modify the electronic transport and conductivity of ZnO nanomaterials.

  20. Gas sensing properties and p-type response of ALD TiO2 coated carbon nanotubes.

    PubMed

    Marichy, Catherine; Donato, Nicola; Latino, Mariangela; Willinger, Marc Georg; Tessonnier, Jean-Philippe; Neri, Giovanni; Pinna, Nicola

    2015-01-16

    Amorphous titanium dioxide-coated carbon nanotubes (CNTs) were prepared by atomic layer deposition (ALD) and investigated as sensing layers for resistive NO2 and O2 gas sensors. By varying ALD process conditions and CNT structure, heterostructures with different metal oxide grain size, morphology and coating thickness were synthesized. Higher responses were observed with homogeneous and continuous 5.5 nm thick films onto CNTs at an operating temperature of 150 °C, while CNTs decorated with either discontinuous film or TiO2 nanoparticles showed a weak response close to the one of device made of bare CNTs. An unexpected p-type behavior in presence of the target gas was also noticed, independently of the metal oxide morphology and thickness. Based on previous works, hypotheses were made in order to explain the p-type behavior of TiO2/CNT sensors.

  1. Formation of a self-consistent double quantum well in a wide p-type quantum well

    NASA Astrophysics Data System (ADS)

    Alshanskiǐ, G. A.; Yakunin, M. V.

    2004-11-01

    The process of formation of self-consistent double quantum wells (DQWs) in a wide p-type quantum well in the presence of uniaxial strain is investigated. A feature of p-type systems is the structure of the valence band, which consists of two branches of energy dispersion—light and heavy holes. It is shown that this feature leads to significant splitting of the subbands of symmetric and antisymmetric states, as a result of which it is difficult to form states of the DQW with a vanishingly small tunneling gap; a uniaxial strain, by lifting the degeneracy of the band, suppresses this property, so that the two ground subbands of the size quantization of the DQW remain degenerate to high energies.

  2. Performance enhancement of blue light-emitting diodes by using special designed n and p-type doped barriers

    NASA Astrophysics Data System (ADS)

    Li, Jing; Guo, Zhiyou; Li, Fangzheng; Lin, Hong; Li, Chu; Xiang, Shuli; Zhou, Tengfei; Wan, Nianqing; Liu, Yang

    2015-09-01

    The characteristics of the nitride-based blue light-emitting diode (LED) by using special designed n and p-type doped barriers have been analyzed numerically in this paper. The internal quantum efficiency (IQE), carrier concentrations in the quantum wells (QWs), energy band diagrams, emission spectra and electrostatic fields are investigated. The simulation results indicate that the proposed LED by using the special designed n and p-type doped barriers has a strong enhancement in the optical output power. The improved performance is mainly attributed to the change of electrical field in the active region, resulting in superior electron confinement and improved hole injection efficiency. Further simulation results also indicate that the proposed LED without the p-AlGaN EBL possesses much better hole uniformity, which is due to the reversed electrostatic field in the last barrier.

  3. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    PubMed Central

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-01-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm−3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab. PMID:27550805

  4. Wetting and infiltration of nitride bonded silicon nitride by liquid silicon

    NASA Astrophysics Data System (ADS)

    Schneider, V.; Reimann, C.; Friedrich, J.

    2016-04-01

    Nitride bonded silicon nitride (NBSN) is a promising crucible material for the repeated use in the directional solidification of multicrystalline (mc) silicon ingots for photovoltaic applications. Due to wetting and infiltration, however, silicon nitride in its initial state does not offer the desired reusability. In this work the sessile drop method is used to systematically study the wetting and infiltration behavior of NBSN after applying different oxidation procedures. It is found that the wetting of the NBSN crucible by liquid silicon can be prevented by the oxidation of the geometrical surface. The infiltration of liquid silicon into the porous crucible can be suppressed by oxygen enrichment within the volume of the NBSN, i.e. at the pore walls of the crucibles. The realized reusability of the NBSN is demonstrated by reusing a NBSN crucible six times for the directional solidification of undoped multicrystalline silicon ingots.

  5. Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

    NASA Technical Reports Server (NTRS)

    Singh, M.; Behrendt, D. R.

    1992-01-01

    Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

  6. S-type and P-type Habitability in Stellar Binary Systems: A Comprehensive Approach. II. Elliptical Orbits

    NASA Astrophysics Data System (ADS)

    Cuntz, M.

    2015-01-01

    In the first paper of this series, a comprehensive approach has been provided for the study of S-type and P-type habitable regions in stellar binary systems, which was, however, restricted to circular orbits of the stellar components. Fortunately, a modest modification of the method also allows for the consideration of elliptical orbits, which of course entails a much broader range of applicability. This augmented method is presented here, and numerous applications are conveyed. In alignment with Paper I, the selected approach considers a variety of aspects, which comprise the consideration of a joint constraint including orbital stability and a habitable region for a possible system planet through the stellar radiative energy fluxes ("radiative habitable zone"; RHZ). The devised method is based on a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are deduced for which kinds of systems S-type and P-type habitable zones are realized. If the RHZs are truncated by the additional constraint of orbital stability, the notation of ST-type and PT-type habitability applies. In comparison to the circular case, it is found that in systems of higher eccentricity, the range of the RHZs is significantly reduced. Moreover, for a considerable number of models, the orbital stability constraint also reduces the range of S-type and P-type habitability. Nonetheless, S-, P-, ST-, and PT-type habitability is identified for a considerable set of system parameters. The method as presented is utilized for BinHab, an online code available at The University of Texas at Arlington.

  7. Identification and molecular characterization of a novel DyP-type peroxidase from Pseudomonas aeruginosa PKE117.

    PubMed

    Li, Jing; Liu, Chen; Li, Baozhen; Yuan, Hongli; Yang, Jinshui; Zheng, Beiwen

    2012-02-01

    A new DyP-type peroxidase from Pseudomonas aeruginosa PKE117 was identified and characterized. The dypPa was first identified via sequence analysis and then cloned in Escherichia coli. Subsequently, the recombinant protein DyPPa was expressed and purified. Its DNA sequence analysis revealed an open reading frame of 897 bp, encoding a protein monomer of 299 amino acid residues with isoelectric point 4.62. According to SDS-PAGE analysis and FPLC result, DyPPa mainly existed as homodimer (64 kDa). DyPPa displayed typical heme absorbance of Soret band, with an Rz value of 1.18. Inductively coupled plasma-atomic absorption spectrum data also indicated DyPPa contained iron. Multiple amino acid sequence alignment of DyPPa with other members of the DyP-type peroxidases family showed the presence of conserved D139, H210, and R227 amino acids and GXXDG motifs, which were commonly shared by the DyP-type peroxidase family. Although the primary structure homology between DyPPa and other family members was very low, their secondary and tertiary structure displayed high homology, which explained the high decolorizing activity of DyPPa. Specifically, DyPPa displayed a good thermal stability and maximal activity on Reactive blue 5 under pH 3.5. Therefore, it was proposed that DyPPa, with a wide range of substrate specificity, was a novel member of the DyP-type peroxidases family. PMID:22161141

  8. S-TYPE AND P-TYPE HABITABILITY IN STELLAR BINARY SYSTEMS: A COMPREHENSIVE APPROACH. II. ELLIPTICAL ORBITS

    SciTech Connect

    Cuntz, M.

    2015-01-10

    In the first paper of this series, a comprehensive approach has been provided for the study of S-type and P-type habitable regions in stellar binary systems, which was, however, restricted to circular orbits of the stellar components. Fortunately, a modest modification of the method also allows for the consideration of elliptical orbits, which of course entails a much broader range of applicability. This augmented method is presented here, and numerous applications are conveyed. In alignment with Paper I, the selected approach considers a variety of aspects, which comprise the consideration of a joint constraint including orbital stability and a habitable region for a possible system planet through the stellar radiative energy fluxes ({sup r}adiative habitable zone{sup ;} RHZ). The devised method is based on a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are deduced for which kinds of systems S-type and P-type habitable zones are realized. If the RHZs are truncated by the additional constraint of orbital stability, the notation of ST-type and PT-type habitability applies. In comparison to the circular case, it is found that in systems of higher eccentricity, the range of the RHZs is significantly reduced. Moreover, for a considerable number of models, the orbital stability constraint also reduces the range of S-type and P-type habitability. Nonetheless, S-, P-, ST-, and PT-type habitability is identified for a considerable set of system parameters. The method as presented is utilized for BinHab, an online code available at The University of Texas at Arlington.

  9. Thermoelectric properties of p-type PbTe/Ag{sub 2}Te bulk composites by extrinsic phase mixing

    SciTech Connect

    Lee, Min Ho; Rhyee, Jong-Soo

    2015-12-15

    We investigated the thermoelectric properties of PbTe/Ag{sub 2}Te bulk composites, synthesized by hand milling, mixing, and hot press sintering. From x-ray diffraction and energy dispersive x-ray spectroscopy measurements, we observed Ag{sub 2}Te phase separation in the PbTe matrix without Ag atom diffusion. In comparison with previously reported pseudo-binary (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} composites, synthesized by high temperature phase separation, the PbTe/Ag{sub 2}Te bulk composites fabricated with a low temperature phase mixing process give rise to p-type conduction of carriers with significantly decreased electrical conductivity. This indicates that Ag atom diffusion in the PbTe matrix changes the sign of the Seebeck coefficient to n-type and also increases the carrier concentration. Effective p-type doping with low temperature phase separation by mixing and hot press sintering can enhance the thermoelectric performance of PbTe/Ag{sub 2}Te bulk composites, which can be used as a p-type counterpart of n-type (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} bulk composites.

  10. Comparative chemical genomics reveal that the spiroindolone antimalarial KAE609 (Cipargamin) is a P-type ATPase inhibitor.

    PubMed

    Goldgof, Gregory M; Durrant, Jacob D; Ottilie, Sabine; Vigil, Edgar; Allen, Kenneth E; Gunawan, Felicia; Kostylev, Maxim; Henderson, Kiersten A; Yang, Jennifer; Schenken, Jake; LaMonte, Gregory M; Manary, Micah J; Murao, Ayako; Nachon, Marie; Stanhope, Rebecca; Prescott, Maximo; McNamara, Case W; Slayman, Carolyn W; Amaro, Rommie E; Suzuki, Yo; Winzeler, Elizabeth A

    2016-01-01

    The spiroindolones, a new class of antimalarial medicines discovered in a cellular screen, are rendered less active by mutations in a parasite P-type ATPase, PfATP4. We show here that S. cerevisiae also acquires mutations in a gene encoding a P-type ATPase (ScPMA1) after exposure to spiroindolones and that these mutations are sufficient for resistance. KAE609 resistance mutations in ScPMA1 do not confer resistance to unrelated antimicrobials, but do confer cross sensitivity to the alkyl-lysophospholipid edelfosine, which is known to displace ScPma1p from the plasma membrane. Using an in vitro cell-free assay, we demonstrate that KAE609 directly inhibits ScPma1p ATPase activity. KAE609 also increases cytoplasmic hydrogen ion concentrations in yeast cells. Computer docking into a ScPma1p homology model identifies a binding mode that supports genetic resistance determinants and in vitro experimental structure-activity relationships in both P. falciparum and S. cerevisiae. This model also suggests a shared binding site with the dihydroisoquinolones antimalarials. Our data support a model in which KAE609 exerts its antimalarial activity by directly interfering with P-type ATPase activity. PMID:27291296

  11. Comparative chemical genomics reveal that the spiroindolone antimalarial KAE609 (Cipargamin) is a P-type ATPase inhibitor

    PubMed Central

    Goldgof, Gregory M.; Durrant, Jacob D.; Ottilie, Sabine; Vigil, Edgar; Allen, Kenneth E.; Gunawan, Felicia; Kostylev, Maxim; Henderson, Kiersten A.; Yang, Jennifer; Schenken, Jake; LaMonte, Gregory M.; Manary, Micah J.; Murao, Ayako; Nachon, Marie; Stanhope, Rebecca; Prescott, Maximo; McNamara, Case W.; Slayman, Carolyn W.; Amaro, Rommie E.; Suzuki, Yo; Winzeler, Elizabeth A.

    2016-01-01

    The spiroindolones, a new class of antimalarial medicines discovered in a cellular screen, are rendered less active by mutations in a parasite P-type ATPase, PfATP4. We show here that S. cerevisiae also acquires mutations in a gene encoding a P-type ATPase (ScPMA1) after exposure to spiroindolones and that these mutations are sufficient for resistance. KAE609 resistance mutations in ScPMA1 do not confer resistance to unrelated antimicrobials, but do confer cross sensitivity to the alkyl-lysophospholipid edelfosine, which is known to displace ScPma1p from the plasma membrane. Using an in vitro cell-free assay, we demonstrate that KAE609 directly inhibits ScPma1p ATPase activity. KAE609 also increases cytoplasmic hydrogen ion concentrations in yeast cells. Computer docking into a ScPma1p homology model identifies a binding mode that supports genetic resistance determinants and in vitro experimental structure-activity relationships in both P. falciparum and S. cerevisiae. This model also suggests a shared binding site with the dihydroisoquinolones antimalarials. Our data support a model in which KAE609 exerts its antimalarial activity by directly interfering with P-type ATPase activity. PMID:27291296

  12. Self-trapping of holes in p-type oxides: Theory for small polarons in MnO

    NASA Astrophysics Data System (ADS)

    Peng, Haowei; Lany, Stephan

    2012-02-01

    Employing the p-d repulsion to increase the valence band dispersion and the energy of the VBM is an important design principle for p-type oxides, as manifested in prototypical p-type oxides like Cu2O or CuAlO2 which show a strong Cu-d/O-p interaction. An alternative opportunity to realize this design principle occurs for Mn(+II) compounds, where the p-d orbital interaction occurs dominantly in the fully occupied d^5 majority spin direction of Mn. However, the ability of Mn to change the oxidation state from +II to +III can lead to a small polaron mechanism for hole transport which hinders p-type conductivity. This work addresses the trends of hole self-trapping for MnO between octahedral (rock-salt structure) and tetrahedral coordination (zinc-blende structure). We employ an on-site hole-state potential so to satisfy the generalized Koopmans condition. This approach avoids the well-known difficulty of density-functional calculations to describe correctly the localization of polaronic states, and allows to quantitatively predict the self-trapping energies. We find that the tetrahedrally coordinated Mn is less susceptible to hole self-trapping than the octahedrally coordinated Mn.

  13. Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer

    NASA Astrophysics Data System (ADS)

    Tadaki, Daisuke; Ma, Teng; Zhang, Jinyu; Iino, Shohei; Hirano-Iwata, Ayumi; Kimura, Yasuo; Rosenberg, Richard A.; Niwano, Michio

    2016-04-01

    Organic thin film transistors (OTFTs) have been explored because of their advantageous features such as light-weight, flexible, and large-area. For more practical application of organic electronic devices, it is very important to realize OTFTs that are composed only of organic materials. In this paper, we have fabricated p+-i-p+ type of OTFTs in which an intrinsic (i) regioregular poly (3-hexylthiophene) (P3HT) layer is used as the active layer and highly doped p-type (p+) P3HT is used as the source and drain electrodes. The 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) was used as the p-type dopant. A fabricating method of p+-i-p+ OTFTs has been developed by using SiO2 and aluminum films as capping layers for micro-scaled patterning of the p+-P3HT electrodes. The characteristics of the OTFTs were examined using the photoelectron spectroscopy and electrical measurements. We demonstrated that the fabricated p+-i-p+ OTFTs work with carrier injection through a built-in potential at p+/i interfaces. We found that the p+-i-p+ OTFTs exhibit better FET characteristics than the conventional P3HT-OTFT with metal (Au) electrodes, indicating that the influence of a carrier injection barrier at the interface between the electrode and the active layer was suppressed by replacing the metal electrodes with p+-P3HT layers.

  14. Oxidation and nitration of mononitrophenols by a DyP-type peroxidase.

    PubMed

    Büttner, Enrico; Ullrich, René; Strittmatter, Eric; Piontek, Klaus; Plattner, Dietmar A; Hofrichter, Martin; Liers, Christiane

    2015-05-15

    Substantial conversion of nitrophenols, typical high-redox potential phenolic substrates, by heme peroxidases has only been reported for lignin peroxidase (LiP) so far. But also a dye-decolorizing peroxidase of Auricularia auricula-judae (AauDyP) was found to be capable of acting on (i) ortho-nitrophenol (oNP), (ii) meta-nitrophenol (mNP) and (iii) para-nitrophenol (pNP). The pH dependency for pNP oxidation showed an optimum at pH 4.5, which is typical for phenol conversion by DyPs and other heme peroxidases. In the case of oNP and pNP conversion, dinitrophenols (2,4-DNP and 2,6-DNP) were identified as products and for pNP additionally p-benzoquinone. Moreover, indications were found for the formation of random polymerization products originating from initially formed phenoxy radical intermediates. Nitration was examined using (15)N-labeled pNP and Na(14)NO2 as an additional source of nitro-groups. Products were identified by HPLC-MS, and mass-to-charge ratios were evaluated to clarify the origin of nitro-groups. The additional nitrogen in DNPs formed during enzymatic conversion was found to originate both from (15)N-pNP and (14)NO2Na. Based on these results, a hypothetical reaction scheme and a catalytically responsible confine of the enzyme's active site are postulated.

  15. Silicon micromachining based on porous silicon formation

    SciTech Connect

    Guilinger, T.R.; Kelly, M.J.; Stevenson, J.O.; Howard, A.; Houston, J.E.; Tsao, S.S.

    1991-12-31

    We describe a new electrochemical processing technique based on porous silicon formation that can produce surface and buried insulators, conductors, and sacrificial layers required for silicon micromachining to fabricate micromechanical devices and sensors. Porosity and thickness of porous silicon layers for micromachining can be controlled to a relative precision better than 0.3% for porosities ranging from 20--80% and thicknesses ranging from sub- micron to hundreds of microns. The technique of using porous silicon has important implications for microfabrication of silicon electromechanical devices and sensors. The high relative precision in realizing a given thickness is superior to that obtained with conventional chemical etches. 8 refs.

  16. Silicon micromachining based on porous silicon formation

    SciTech Connect

    Guilinger, T.R.; Kelly, M.J.; Stevenson, J.O.; Howard, A.; Houston, J.E.; Tsao, S.S.

    1991-01-01

    We describe a new electrochemical processing technique based on porous silicon formation that can produce surface and buried insulators, conductors, and sacrificial layers required for silicon micromachining to fabricate micromechanical devices and sensors. Porosity and thickness of porous silicon layers for micromachining can be controlled to a relative precision better than 0.3% for porosities ranging from 20--80% and thicknesses ranging from sub- micron to hundreds of microns. The technique of using porous silicon has important implications for microfabrication of silicon electromechanical devices and sensors. The high relative precision in realizing a given thickness is superior to that obtained with conventional chemical etches. 8 refs.

  17. Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

    PubMed

    Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

    2015-01-01

    We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

  18. Upgrading Metallurgical-Grade Silicon

    NASA Technical Reports Server (NTRS)

    Woerner, L. M.; Moore, E. B.

    1985-01-01

    Closed-loop process produces semiconductor-grade silicon. Metallurgical-grade silicon converted to ultrapure silicon by reacting with hydrogen and silicon tetrahalide to form trihalosilane, purifying this intermediate and again decomposing to high purity silicon in third stage. Heterogeneously and homogeneously nucleated polycrystalline silicon used in semiconductor device applications and in silicon photovoltaic solar cell fabrication.

  19. Thin silicon solar cells

    NASA Astrophysics Data System (ADS)

    Hall, R. B.; Bacon, C.; Direda, V.; Ford, D. H.; Ingram, A. E.; Cotter, J.; Hughes-Lampros, T.; Rand, J. A.; Ruffins, T. R.; Barnett, A. M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (less than 50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  20. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  1. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  2. Silicon production in a fluidized bed reactor

    NASA Technical Reports Server (NTRS)

    Rohatgi, N. K.

    1986-01-01

    Part of the development effort of the JPL in-house technology involved in the Flat-Plate Solar Array (FSA) Project was the investigation of a low-cost process to produce semiconductor-grade silicon for terrestrial photovoltaic cell applications. The process selected was based on pyrolysis of silane in a fluidized-bed reactor (FBR). Following initial investigations involving 1- and 2-in. diameter reactors, a 6-in. diameter, engineering-scale FBR was constructed to establish reactor performance, mechanism of silicon deposition, product morphology, and product purity. The overall mass balance for all experiments indicates that more than 90% of the total silicon fed into the reactor is deposited on silicon seed particles and the remaining 10% becomes elutriated fines. Silicon production rates were demonstrated of 1.5 kg/h at 30% silane concentration and 3.5 kg/h at 80% silane concentration. The mechanism of silicon deposition is described by a six-path process: heterogeneous deposition, homogeneous decomposition, coalescence, coagulation, scavenging, and heterogeneous growth on fines. The bulk of the growth silicon layer appears to be made up of small diameter particles. This product morphology lends support to the concept of the scavenging of homogeneously nucleated silicon.

  3. Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFET.

    PubMed

    Chen, Kuan-Ting; Fan, Jun Wei; Chang, Shu-Tong; Lin, Chung-Yi

    2015-03-01

    In this paper, the subband structure and effective mass of an Si-based alloy inversion layer in a PMOSFET are studied theoretically. The strain condition considered in our calculations is the intrinsic strain resulting from growth of the silicon-carbon alloy on a (001) Si substrate and mechanical uniaxial stress. The quantum confinement effect resulting from the vertically effective electric field was incorporated into the k · p calculation. The distinct effective mass, such as the quantization effective mass and the density-of-states (DOS) effective mass, as well as the subband structure of the silicon-carbon alloy inversion layer for a PMOSFET under substrate strain and various effective electric field strengths, were all investigated. Ore results show that subband structure of relaxed silicon-carbon alloys with low carbon content are almost the same as silicon. We find that an external stress applied parallel to the channel direction can efficiently reduce the effective mass along the channel direction, thus producing hole mobility enhancement.

  4. Silicon material technology status

    NASA Astrophysics Data System (ADS)

    Lutwack, R.

    Silicon has been the basic element for the electronic and photovoltaic industries. The use of silicon as the primary element for terrestrial photovoltaic solar arrays is projected to continue. The reasons for this projection are related to the maturity of silicon technology, the ready availability of extremely pure silicon, the performance of silicon solar cells, and the considerable present investment in technology and manufacturing facilities. The technologies for producing semiconductor grade silicon and, to a lesser extent, refined metallurgical grade silicon are considered. It is pointed out that nearly all of the semiconductor grade silicon is produced by processes based on the Siemens deposition reactor, a technology developed 26 years ago. The state-of-the-art for producing silicon by this process is discussed. It is expected that efforts to reduce polysilicon process costs will continue.

  5. Nickel oxide particles catalyze photochemical hydrogen evolution from water--nanoscaling promotes p-type character and minority carrier extraction.

    PubMed

    Nail, Benjamin A; Fields, Jorie M; Zhao, Jing; Wang, Jiarui; Greaney, Matthew J; Brutchey, Richard L; Osterloh, Frank E

    2015-05-26

    Nickel(II) oxide (NiO) is an important wide gap p-type semiconductor used as a hole transport material for dye sensitized solar cells and as a water oxidation electrocatalyst. Here we demonstrate that nanocrystals of the material have increased p-type character and improved photocatalytic activity for hydrogen evolution from water in the presence of methanol as sacrificial electron donor. NiO nanocrystals were synthesized by hydrolysis of Ni(II) nitrate under hydrothermal conditions followed by calcination in air. The crystals have the rock salt structure type and adopt a plate-like morphology (50-90 nm × 10-15 nm). Diffuse reflectance absorbance spectra indicate a band gap of 3.45 eV, similar to bulk NiO. Photoelectrochemical measurements were performed at neutral pH with methylviologen as electron acceptor, revealing photo-onset potentials (Fermi energies) of 0.2 and 0.05 eV (NHE) for nanoscale and bulk NiO, respectively. Nano-NiO and NiO-Pt composites obtained by photodepositon of H2PtCl6 catalyze hydrogen evolution from aqueous methanol at rates of 0.8 and 4.5 μmol H2 h(-1), respectively, compared to 0.5 and 2.1 μmol H2 h(-1) for bulk-NiO and NiO-Pt (20 mg of catalyst, 300 W Xe lamp). Surface photovoltage spectroscopy of NiO and NiO-Pt films on Au substrates indicate a metal Pt-NiO junction with 30 mV photovoltage that promotes carrier separation. The increased photocatalytic and photoelectrochemical performance of nano-NiO is due to improved minority carrier extraction and increased p-type character, as deduced from Mott-Schottky plots, optical absorbance, and X-ray photoelectron spectroscopy data.

  6. P-type ZnO films by phosphorus doping using plasma immersion ion-implantation technique

    NASA Astrophysics Data System (ADS)

    Nagar, S.; Chakrabarti, S.

    2013-03-01

    ZnO has been a subject of intense research in the optoelectronics community owing to its wide bandgap (3.3eV) and large exciton binding energy (60meV). However, difficulty in doping it p-type posts a hindrance in fabricating ZnO-based devices. In order to make p-type ZnO films, phosphorus implantation, using plasma immersion ion-implantation technique (2kV, 900W, 10μs pulse width) for 30 seconds, was performed on ZnO thin film deposited by RF Magnetron Sputtering (Sample A). The implanted samples were subsequently rapid thermal annealed at 700°C and 1000°C (Samples B and C) in oxygen environment for 30 seconds. Low temperature (8K) photoluminescence spectra reveal dominant donor-bound exciton (D°X) peak at 3.36eV for samples A and B. However, for Sample B the peaks around 3.31eV and 3.22eV corresponding to the free electron-acceptor (FA) and donor to acceptor pair peaks (DAP) are also observed. A dominant peak around 3.35eV, corresponding to acceptor bound exciton (A°X) peak, is detected for Sample C along with the presence of FA and DAP peaks around 3.31eV and 3.22eV. Moreover, the deep level peak around 2.5eV is higher for Sample B which may be due to implantation and acceptor related defects. However, for Sample C, the deep level peaks are very weak compared to the near band edge peaks confirming that these peaks are mainly due to intrinsic defects and not related to acceptors. These results clearly show us a promising way to achieve p-type ZnO films using phosphorus doping.

  7. Design of ternary alkaline-earth metal Sn(II) oxides with potential good p-type conductivity

    DOE PAGESBeta

    Du, Mao -Hua; Singh, David J.; Zhang, Lijun; Li, Yuwei; Xu, Qiaoling; Ma, Yanming; Zheng, Weitao

    2016-04-19

    Oxides with good p-type conductivity have been long sought after to achieve high performance all-oxide optoelectronic devices. Divalent Sn(II) based oxides are promising candidates because of their rather dispersive upper valence bands caused by the Sn-5s/O-2p anti-bonding hybridization. There are so far few known Sn(II) oxides being p-type conductive suitable for device applications. Here, we present via first-principles global optimization structure searches a material design study for a hitherto unexplored Sn(II)-based system, ternary alkaline-earth metal Sn(II) oxides in the stoichiometry of MSn2O3 (M = Mg, Ca, Sr, Ba). We identify two stable compounds of SrSn2O3 and BaSn2O3, which can bemore » stabilized by Sn-rich conditions in phase stability diagrams. Their structures follow the Zintl behaviour and consist of basic structural motifs of SnO3 tetrahedra. Unexpectedly they show distinct electronic properties with band gaps ranging from 1.90 (BaSn2O3) to 3.15 (SrSn2O3) eV, and hole effective masses ranging from 0.87 (BaSn2O3) to above 6.0 (SrSn2O3) m0. Further exploration of metastable phases indicates a wide tunability of electronic properties controlled by the details of the bonding between the basic structural motifs. Lastly, this suggests further exploration of alkaline-earth metal Sn(II) oxides for potential applications requiring good p-type conductivity such as transparent conductors and photovoltaic absorbers.« less

  8. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    NASA Astrophysics Data System (ADS)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Boeckl, John J.; Hellerstedt, Jack; Fuhrer, Michael S.; Iacopi, Francesca

    2016-07-01

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High-resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  9. p-type ZnO and ZnMnO by oxidation of Zn(Mn)Te films

    NASA Astrophysics Data System (ADS)

    Przedziecka, E.; Kamiska, E.; Dynowska, E.; Dobrowolski, W.; Jakiea, R.; Kopotowski, .; Sawicki, M.; Kiecana, M.; Kossut, J.

    2006-03-01

    ZnO and ZnMnO doped with N and/or As layers were fabricated by thermal oxidation of ZnTe and ZnMnTe grown by MBE on different substrates. The Hall measurements demonstrated p -type conductivity with the hole concentration of 5 . 1019 cm-3 for ZnO:As and ZnO:As:N on GaAs substrates and 6 . 1017 cm-3 for ZnTe:N on ZnTe substrates. Optical study showed meaningful differences between samples with different acceptor, grown on different substrates. Magnetoptical experiment demonstration Zeeman splitting in ZnMnO samples.

  10. Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

    NASA Technical Reports Server (NTRS)

    Chen, R. T.

    1983-01-01

    Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

  11. Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature

    SciTech Connect

    Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo; Park, Sang-Hee Ko; Hwang, Chi-Sun

    2010-05-10

    Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

  12. Consequences of Atomic Oxygen Interaction With Silicone and Silicone Contamination on Surfaces in Low Earth Orbit

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; deGroh, Kim K.; Rutledge, Sharon K.; Haytas, Christy A.

    1999-01-01

    The exposure of silicones to atomic oxygen in low Earth orbit causes oxidation of the surface, resulting in conversion of silicone to silica. This chemical conversion increases the elastic modulus of the surface and initiates the development of a tensile strain. Ultimately, with sufficient exposure, tensile strain leads to cracking of the surface enabling the underlying unexposed silicone to be converted to silica resulting in additional depth and extent of cracking. The use of silicone coatings for the protection of materials from atomic oxygen attack is limited because of the eventual exposure of underlying unprotected polymeric material due to deep tensile stress cracking of the oxidized silicone. The use of moderate to high volatility silicones in low Earth orbit has resulted in a silicone contamination arrival at surfaces which are simultaneously being bombarded with atomic oxygen, thus leading to conversion of the silicone contaminant to silica. As a result of these processes, a gradual accumulation of contamination occurs leading to deposits which at times have been up to several microns thick (as in the case of a Mir solar array after 10 years in space). The contamination species typically consist of silicon, oxygen and carbon. which in the synergistic environment of atomic oxygen and UV radiation leads to increased solar absorptance and reduced solar transmittance. A comparison of the results of atomic oxygen interaction with silicones and silicone contamination will be presented based on the LDEF, EOIM-111, Offeq-3 spacecraft and Mir solar array in-space results. The design of a contamination pin-hole camera space experiment which uses atomic oxygen to produce an image of the sources of silicone contamination will also be presented.

  13. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    PubMed

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

  14. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices

    SciTech Connect

    Martin U. Pralle; James E. Carey

    2010-07-31

    SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

  15. Simple method for the growth of 4H silicon carbide on silicon substrate

    NASA Astrophysics Data System (ADS)

    Asghar, M.; Shahid, M. Y.; Iqbal, F.; Fatima, K.; Nawaz, Muhammad Asif; Arbi, H. M.; Tsu, R.

    2016-03-01

    In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat. The as grown film was characterized by XRD, FTIR, UV-Vis Spectrophotometer and Hall Measurements. The XRD pattern displayed four peaks at 2Θ angles 28.550, 32.700, 36.100 and 58.900 related to Si (1 1 1), 4H-SiC (1 0 0), 4H-SiC (1 1 1) and 4H-SiC (2 2 2), respectively. FTIR, UV-Vis spectrophotometer and electrical properties further strengthened the 4H-SiC growth.

  16. Optical and piezoelectric properties of p-type ZnO nanowires on transparent flexible substrate for energy harvesting

    NASA Astrophysics Data System (ADS)

    Liu, Guocheng; Tam, Man Chun; Hu, Lilei; EI-Rayes, Karim; Guo, Qiuquan; Yang, Jun; Mrad, Nezih; Ban, Dayan

    2014-09-01

    High quality, controlled-structure nanowires (NWs), grown on a transparent flexible substrate, have attracted great interest as a mean of harvesting solar and mechanical energy. Clarifying their optical and piezoelectric properties is essential for this application. In this paper, vertically aligned lithium (Li) doped p-type ZnO NWs were grown, on a micro-patterned transparent flexible polyethylene naphthalate (PEN) substrate, by electrochemical deposition at 88 °C. The substrate was coated with aluminum-doped ZnO (AZO) thin layer, which served as a good seed layer and a transparent conductive oxide layer. Varying the seed layer thickness gave control of the individual NWs' diameter, density and alignment. The effect of doping on the optical band-gap, crystalline quality and Schottky barrier were investigated by X-ray diffraction (XRD) spectroscopy and piezoelectric characterization. The piezoelectric polarization induced piezo-potential in strained ZnO NWs can drive the flow of electrons without an applied electric bias, thus can be used to harvest mechanical energy and convert it into electricity. To prove this concept, flexible piezoelectric energy harvesters based on an array of ZnO NWs were fabricated. Results show that the patterned p-type NW-based energy harvester produces 26-fold output voltage and 19-fold current compared to the conventional un-doped ZnO NW energy harvester from the same acceleration input.

  17. Structural studies of P-type ATPase–ligand complexes using an X-ray free-electron laser

    PubMed Central

    Bublitz, Maike; Nass, Karol; Drachmann, Nikolaj D.; Markvardsen, Anders J.; Gutmann, Matthias J.; Barends, Thomas R. M.; Mattle, Daniel; Shoeman, Robert L.; Doak, R. Bruce; Boutet, Sébastien; Messerschmidt, Marc; Seibert, Marvin M.; Williams, Garth J.; Foucar, Lutz; Reinhard, Linda; Sitsel, Oleg; Gregersen, Jonas L.; Clausen, Johannes D.; Boesen, Thomas; Gotfryd, Kamil; Wang, Kai-Tuo; Olesen, Claus; Møller, Jesper V.; Nissen, Poul; Schlichting, Ilme

    2015-01-01

    Membrane proteins are key players in biological systems, mediating signalling events and the specific transport of e.g. ions and metabolites. Consequently, membrane proteins are targeted by a large number of currently approved drugs. Understanding their functions and molecular mechanisms is greatly dependent on structural information, not least on complexes with functionally or medically important ligands. Structure determination, however, is hampered by the difficulty of obtaining well diffracting, macroscopic crystals. Here, the feasibility of X-ray free-electron-laser-based serial femtosecond crystallography (SFX) for the structure determination of membrane protein–ligand complexes using microcrystals of various native-source and recombinant P-type ATPase complexes is demonstrated. The data reveal the binding sites of a variety of ligands, including lipids and inhibitors such as the hallmark P-type ATPase inhibitor orthovanadate. By analyzing the resolution dependence of ligand densities and overall model qualities, SFX data quality metrics as well as suitable refinement procedures are discussed. Even at relatively low resolution and multiplicity, the identification of ligands can be demonstrated. This makes SFX a useful tool for ligand screening and thus for unravelling the molecular mechanisms of biologically active proteins. PMID:26175901

  18. Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

    NASA Astrophysics Data System (ADS)

    Qamar, Afzaal; Dao, Dzung Viet; Phan, Hoang-Phuong; Dinh, Toan; Dimitrijev, Sima

    2016-08-01

    Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P 12 = ( 5.3 ± 0.4 ) × 10 - 11 Pa - 1 , P 11 = ( - 2.6 ± 0.6 ) × 10 - 11 Pa - 1 , and P 44 = ( 11.42 ± 0.6 ) × 10 - 11 Pa - 1 . Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.

  19. High performance printed N and P-type OTFTs enabling digital and analog complementary circuits on flexible plastic substrate

    NASA Astrophysics Data System (ADS)

    Jacob, S.; Abdinia, S.; Benwadih, M.; Bablet, J.; Chartier, I.; Gwoziecki, R.; Cantatore, E.; van Roermund, A. H. M.; Maddiona, L.; Tramontana, F.; Maiellaro, G.; Mariucci, L.; Rapisarda, M.; Palmisano, G.; Coppard, R.

    2013-06-01

    This paper presents a printed organic complementary technology on flexible plastic substrate with high performance N and P-type Organic Thin Film Transistors (OTFTs), based on small-molecule organic semiconductors in solution. Challenges related to the integration of both OTFT types in a common complementary flow are addressed, showing the importance of surface treatments. Stability on single devices and on an elementary complementary digital circuit (ring oscillator) is studied, demonstrating that a robust and reliable flow with high electrical performances can be established for printed organic devices. These devices are used to manufacture several analog and digital building blocks. The design is carried out using a model specifically developed for this technology, and taking into account the parametric variability. High-frequency measurements of printed envelope detectors show improved speed performance, resulting from the high mobility of the OTFTs. In addition, a compact dynamic flip-flop and a low-offset comparator are demonstrated, thanks to availability of both n-type and p-type OTFTs in the technology. Measurement results are in good agreement with the simulations. The circuits presented establish a complete library of building blocks for the realization of a printed RFID tag.

  20. Control of p-type conduction in Mg doped monophase CuCrO2 thin layers

    NASA Astrophysics Data System (ADS)

    Chikoidze, E.; Boshta, M.; Gomaa, M.; Tchelidze, T.; Daraselia, D.; Japaridze, D.; Shengelaya, A.; Dumont, Y.; Neumann-Spallart, M.

    2016-05-01

    This work aims to clarify the origin of hole conduction in undoped and Mg-doped CuCrO2 oxide in order to have the possibility of controlling it by corresponding growth parameters. A chemical spray pyrolysis procedure for the deposition of p-type semiconductor thin films is described. The as-deposited films were amorphous. The formation of highly crystalline CuCrO2 and Mg-doped CuCrO2 films with a single phase delafossite structure was realized by annealing between 600 °C and 960 °C in a nitrogen atmosphere. The carrier concentration and the point defects of the samples are calculated by using the developed Kroger method of quasi-chemical reactions. p-type conductivity was predicted and observed in the undoped and Mg doped CuCrO2 sample, and with n ~ 1018 cm‑3 carrier concentrations for 4%Mg doping. The electrical resistivity for a 4% Mg doped sample was 1.4 Ω·cm with a Seebeck coefficient of  +130 μV K‑1 at 40 °C. By electroparamagnetic resonance spectroscopy Cr3+ and Cu2+ related defects were studied.

  1. Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

    PubMed

    Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

    2016-08-31

    The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

  2. Enhancement of p-Type Dye-Sensitized Solar Cell Performance by Supramolecular Assembly of Electron Donor and Acceptor

    PubMed Central

    Tian, Haining; Oscarsson, Johan; Gabrielsson, Erik; Eriksson, Susanna K.; Lindblad, Rebecka; Xu, Bo; Hao, Yan; Boschloo, Gerrit; Johansson, Erik M. J.; Gardner, James M.; Hagfeldt, Anders; Rensmo, Håkan; Sun, Licheng

    2014-01-01

    Supramolecular interactions based on porphyrin and fullerene derivatives were successfully adopted to improve the photovoltaic performance of p-type dye-sensitized solar cells (DSCs). Photoelectron spectroscopy (PES) measurements suggest a change in binding configuration of ZnTCPP after co-sensitization with C60PPy, which could be ascribed to supramolecular interaction between ZnTCPP and C60PPy. The performance of the ZnTCPP/C60PPy-based p-type DSC has been increased by a factor of 4 in comparison with the DSC with the ZnTCPP alone. At 560 nm, the IPCE value of DSCs based on ZnTCPP/C60PPy was a factor of 10 greater than that generated by ZnTCPP-based DSCs. The influence of different electrolytes on charge extraction and electron lifetime was investigated and showed that the enhanced Voc from the Co2+/3+(dtbp)3-based device is due to the positive EF shift of NiO. PMID:24603319

  3. Thermoelectric properties of p-type Fe-doped TiCoSb half-Heusler compounds

    NASA Astrophysics Data System (ADS)

    Wu, Ting; Jiang, Wan; Li, Xiaoya; Zhou, Yanfei; Chen, Lidong

    2007-11-01

    TiFexCo1-xSb half-Heusler materials with randomly distributed TiO2 particles have been synthesized by arc melting and annealing. Thermoelectric properties were measured in the temperature range of ˜300-850 K. TiCoSb shows n-type conduction, while TiFexCo1-xSb transfers to p-type conduction when x ≥0.01. The electrical conductivity of p-type TiFexCo1-xSb increased with increasing Fe content. The maximum Seebeck coefficient reached about 300 μV/K at 850 K for x =0.15. Since Fe powder contained a trace of Fe2O3, a small amount of TiO2 particles formed during the synthesis process. The lattice thermal conductivity dramatically decreased with increasing Fe content, which was mostly caused by the introduction of in situ formed TiO2 particles, as well as the effects of mass fluctuation and strain field fluctuation due to the substitution of Fe to the Co site. The dimensionless figure of merit (ZT =S2σT/κ) was significantly improved over the whole temperature region, and a maximum ZT value of 0.45 has been obtained for the composition of TiFe0.15Co0.85Sb at 850 K.

  4. Structural studies of P-type ATPase–ligand complexes using an X-ray free-electron laser

    SciTech Connect

    Bublitz, Maike; Nass, Karol; Drachmann, Nikolaj D.; Markvardsen, Anders J.; Gutmann, Matthias J.; Barends, Thomas R. M.; Mattle, Daniel; Shoeman, Robert L.; Doak, R. Bruce; Boutet, Sébastien; Messerschmidt, Marc; Seibert, Marvin M.; Williams, Garth J.; Foucar, Lutz; Reinhard, Linda; Sitsel, Oleg; Gregersen, Jonas L.; Clausen, Johannes D.; Boesen, Thomas; Gotfryd, Kamil; Wang, Kai-Tuo; Olesen, Claus; Møller, Jesper V.; Nissen, Poul; Schlichting, Ilme

    2015-06-11

    Membrane proteins are key players in biological systems, mediating signalling events and the specific transport ofe.g.ions and metabolites. Consequently, membrane proteins are targeted by a large number of currently approved drugs. Understanding their functions and molecular mechanisms is greatly dependent on structural information, not least on complexes with functionally or medically important ligands. Structure determination, however, is hampered by the difficulty of obtaining well diffracting, macroscopic crystals. Here, the feasibility of X-ray free-electron-laser-based serial femtosecond crystallography (SFX) for the structure determination of membrane protein–ligand complexes using microcrystals of various native-source and recombinant P-type ATPase complexes is demonstrated. The data reveal the binding sites of a variety of ligands, including lipids and inhibitors such as the hallmark P-type ATPase inhibitor orthovanadate. By analyzing the resolution dependence of ligand densities and overall model qualities, SFX data quality metrics as well as suitable refinement procedures are discussed. Even at relatively low resolution and multiplicity, the identification of ligands can be demonstrated. This makes SFX a useful tool for ligand screening and thus for unravelling the molecular mechanisms of biologically active proteins.

  5. Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

    PubMed

    Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

    2016-08-31

    The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2). PMID:27547841

  6. Control of p-type conduction in Mg doped monophase CuCrO2 thin layers

    NASA Astrophysics Data System (ADS)

    Chikoidze, E.; Boshta, M.; Gomaa, M.; Tchelidze, T.; Daraselia, D.; Japaridze, D.; Shengelaya, A.; Dumont, Y.; Neumann-Spallart, M.

    2016-05-01

    This work aims to clarify the origin of hole conduction in undoped and Mg-doped CuCrO2 oxide in order to have the possibility of controlling it by corresponding growth parameters. A chemical spray pyrolysis procedure for the deposition of p-type semiconductor thin films is described. The as-deposited films were amorphous. The formation of highly crystalline CuCrO2 and Mg-doped CuCrO2 films with a single phase delafossite structure was realized by annealing between 600 °C and 960 °C in a nitrogen atmosphere. The carrier concentration and the point defects of the samples are calculated by using the developed Kroger method of quasi-chemical reactions. p-type conductivity was predicted and observed in the undoped and Mg doped CuCrO2 sample, and with n ~ 1018 cm-3 carrier concentrations for 4%Mg doping. The electrical resistivity for a 4% Mg doped sample was 1.4 Ω·cm with a Seebeck coefficient of  +130 μV K-1 at 40 °C. By electroparamagnetic resonance spectroscopy Cr3+ and Cu2+ related defects were studied.

  7. Phosphorous doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics

    NASA Astrophysics Data System (ADS)

    Cao, B. Q.; Lorenz, M.; von Wenckstern, H.; Czekalla, C.; Brandt, M.; Lenzner, J.; Benndorf, G.; Biehne, G.; Grundmann, M.

    2008-02-01

    Phosphorous-doped ZnO (ZnO:P) nanowires were prepared by a high-pressure pulsed laser deposition process. To extend the size range of available wires, μm-thick ZnO:P microwires were grown additionally by a direct carbothermal deposition process. Low-temperature cathodoluminescence of single ZnO:P nanowires grown by both processes exhibit characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission ((A 0, X), 3.356 eV), free-electron to neutral-acceptor emission ((e, A 0), 3.314 eV), and donor-to-acceptor pair emission (DAP, ~3.24 and ~3.04 eV). This proves that stable phosphorus acceptor levels have been induced into the ZnO:P nano- and microwires. From the quantitative evaluation of the spectroscopic features we deduct an acceptor binding energy of 122 meV. The ZnO:P microwires were used as channels in bottom-gate field effect transistors (FET) built on Si substrates with SiO II gate oxide. The electrical FET-characteristics of several wires show reproducibly clear qualitative indication for p-type conductivity for variation of gate voltage. This behavior is opposite to that of nominally undoped, n-type conducting wires investigated for comparison. The p-type conductivity was found to be stable over more than six months.

  8. A conserved asparagine in a P-type proton pump is required for efficient gating of protons.

    PubMed

    Ekberg, Kira; Wielandt, Alex G; Buch-Pedersen, Morten J; Palmgren, Michael G

    2013-04-01

    The minimal proton pumping machinery of the Arabidopsis thaliana P-type plasma membrane H(+)-ATPase isoform 2 (AHA2) consists of an aspartate residue serving as key proton donor/acceptor (Asp-684) and an arginine residue controlling the pKa of the aspartate. However, other important aspects of the proton transport mechanism such as gating, and the ability to occlude protons, are still unclear. An asparagine residue (Asn-106) in transmembrane segment 2 of AHA2 is conserved in all P-type plasma membrane H(+)-ATPases. In the crystal structure of the plant plasma membrane H(+)-ATPase, this residue is located in the putative ligand entrance pathway, in close proximity to the central proton donor/acceptor Asp-684. Substitution of Asn-106 resulted in mutant enzymes with significantly reduced ability to transport protons against a membrane potential. Sensitivity toward orthovanadate was increased when Asn-106 was substituted with an aspartate residue, but decreased in mutants with alanine, lysine, glutamine, or threonine replacement of Asn-106. The apparent proton affinity was decreased for all mutants, most likely due to a perturbation of the local environment of Asp-684. Altogether, our results demonstrate that Asn-106 is important for closure of the proton entrance pathway prior to proton translocation across the membrane.

  9. Structural studies of P-type ATPase–ligand complexes using an X-ray free-electron laser

    DOE PAGESBeta

    Bublitz, Maike; Nass, Karol; Drachmann, Nikolaj D.; Markvardsen, Anders J.; Gutmann, Matthias J.; Barends, Thomas R. M.; Mattle, Daniel; Shoeman, Robert L.; Doak, R. Bruce; Boutet, Sébastien; et al

    2015-06-11

    Membrane proteins are key players in biological systems, mediating signalling events and the specific transport ofe.g.ions and metabolites. Consequently, membrane proteins are targeted by a large number of currently approved drugs. Understanding their functions and molecular mechanisms is greatly dependent on structural information, not least on complexes with functionally or medically important ligands. Structure determination, however, is hampered by the difficulty of obtaining well diffracting, macroscopic crystals. Here, the feasibility of X-ray free-electron-laser-based serial femtosecond crystallography (SFX) for the structure determination of membrane protein–ligand complexes using microcrystals of various native-source and recombinant P-type ATPase complexes is demonstrated. The data revealmore » the binding sites of a variety of ligands, including lipids and inhibitors such as the hallmark P-type ATPase inhibitor orthovanadate. By analyzing the resolution dependence of ligand densities and overall model qualities, SFX data quality metrics as well as suitable refinement procedures are discussed. Even at relatively low resolution and multiplicity, the identification of ligands can be demonstrated. This makes SFX a useful tool for ligand screening and thus for unravelling the molecular mechanisms of biologically active proteins.« less

  10. High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy

    SciTech Connect

    Xiu, F.X.; Yang, Z.; Mandalapu, L.J.; Zhao, D.T.; Liu, J.L.; Beyermann, W.P.

    2005-10-10

    Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton (A deg. X) emission was observed at 3.358 eV at 8 K. The acceptor energy level of the Sb dopant is estimated to be 0.2 eV above the valence band. Temperature-dependent Hall measurements were performed on Sb-doped ZnO films. At room temperature, one Sb-doped ZnO sample exhibited a low resistivity of 0.2 {omega} cm, high hole concentration of 1.7x10{sup 18} cm{sup -3} and high mobility of 20.0 cm{sup 2}/V s. This study suggests that Sb is an excellent dopant for reliable and reproducible p-type ZnO fabrication.

  11. Benefits of Carrier-Pocket Anisotropy to Thermoelectric Performance: The Case of p -Type AgBiSe2

    DOE PAGESBeta

    Parker, David S.; May, Andrew F.; Singh, David J.

    2015-06-05

    Here we study theoretically the effects of anisotropy on the thermoelectric performance of p-type AgBiSe2. We present an apparent realization of the thermoelectric benefits of one-dimensional plate-like carrier pocket anisotropy in the valence band of this material. Based on first principles calculations we find a substantial anisotropy in the electronic structure, likely favorable for thermoelectric performance, in the valence bands of the hexagonal phase of the silver chalcogenide thermoelectric AgBiSe2, while the conduction bands are more isotropic, and in our experiments do not attain high performance. AgBiSe2 has already exhibited a ZT value of 1.5 in a high-temperature disordered fccmore » phase, but room-temperature performance has not been demonstrated. We develop a theory for the ability of anisotropy to decouple the density-of-states and conductivity effective masses, pointing out the influence of this effect in the high performance thermoelectrics Bi2Te3 and PbTe. From our first principles and Boltzmann transport calculations we find that p-type AgBiSe2 has substantial promise as a room temperature thermoelectric, and estimate its performance.« less

  12. Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

    PubMed Central

    Zheng, T. C.; Lin, W.; Liu, R.; Cai, D. J.; Li, J. C.; Li, S. P.; Kang, J. Y.

    2016-01-01

    A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger pz hybridization between Mg and N. Based on the theoretical analysis, highly conductive p-type multidimensional Al0.63Ga0.37N/Al0.51Ga0.49N SLs are grown with identified steps via metalorganic vapor-phase epitaxy. The hole concentration reaches up to 3.5 × 1018 cm−3, while the corresponding resistivity reduces to 0.7 Ω cm at room temperature, which is tens times improvement in conductivity compared with that of conventional SLs. High hole concentration can be maintained even at 100 K. High p-type conductivity in Al-rich structural material is an important step for the future design of superior AlGaN-based deep ultraviolet devices. PMID:26906334

  13. Wide band gap p-type semiconductors Cu3TaQ4 (Q = S or Se)

    NASA Astrophysics Data System (ADS)

    Newhouse, Paul; Hersh, Peter; Zakutayev, Andriy; Richard, Annette; Platt, Heather; Keszler, Douglas; Tate, Janet

    2008-05-01

    The structural and optical properties of thin films, powders, and single crystals of two wide band gap (Eg> 2.4 eV) p-type semiconducting materials Cu3TaQ4 (Q = S, Se) are presented. These materials exhibit a cubic crystal structure, which is a favorable processing characteristic and unusual among Cu-based wide-gap p-type materials. Thin films have been prepared using a two-step growth process involving pulsed laser deposition of ceramic Cu3TaQ4 targets and ex-situ annealing of the as-deposited films in a chalcogenide-containing atmosphere. The resultant films exhibit mixed polycrystalline and (100)-oriented structure when grown on amorphous SiO2 substrates and show strong (100) preferential orientation when prepared on single-crystal yttria-stabilized zirconia substrates. Powders and thin films of Cu3TaS4 exhibit intense visible photoemission when irradiated by UV light, and the wavelength of the photoemission can be modulated by doping.

  14. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    PubMed

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement. PMID:26736028

  15. Growth of p-type and n-type m-plane GaN by molecular beam epitaxy

    SciTech Connect

    McLaurin, M.; Mates, T. E.; Wu, F.; Speck, J. S.

    2006-09-15

    Plasma-assisted molecular beam epitaxial growth of Mg-doped, p-type and Si-doped, n-type m-plane GaN on 6H m-plane SiC is demonstrated. Phase-pure, m-plane GaN films exhibiting a large anisotropy in film mosaic ({approx}0.2 deg. full width at half maximum, x-ray rocking curve scan taken parallel to [1120] versus {approx}2 deg. parallel to [0001]) were grown on m-plane SiC substrates. Maximum hole concentrations of {approx}7x10{sup 18} cm{sup -3} were achieved with p-type conductivities as high as {approx}5 {omega}{sup -1} cm{sup -1} without the presence of Mg-rich inclusions or inversion domains as viewed by cross-section transmission electron microscopy. Temperature dependent Hall effect measurements indicate that the Mg-related acceptor state in m-plane GaN is the same as that exhibited in c-plane GaN. Free electron concentrations as high as {approx}4x10{sup 18} cm{sup -3} were measured in the Si-doped m-plane GaN with corresponding mobilities of {approx}500 cm{sup 2}/V s measured parallel to the [1120] direction.

  16. Preparation and Characterization of P-Type and N-Type Doped Expanded Graphite Polymer Composites for Thermoelectric Applications.

    PubMed

    Javadi, Reza; Choi, Pyung Ho; Park, Hyoung Sun; Choi, Byoung Deog

    2015-11-01

    In this work, we demonstrate that expanded graphite can be sufficiently dispersed in polymer solution to form suspensions. Thin composite films were prepared by casting and drying the suspensions. The thermoelectric properties of expanded graphite (ExG)-polymer composites were easily modified by chemical doping. Electrically and thermally insulating polymers of PC, PS, and PMMA served as matrix materials. ExG composite films in PC, PMMA, and PS were prepared using thionyl chloride as the p-type dopant and PEI as the n-type dopant. By comparing the electrical conductivity and Seebeck coefficient values of the composite films, we observed that use of an electron acceptor material (thionyl chloride) in composites enhanced electrical conductivity and reduced the value of the positive Seebeck coefficient, which are p-type doping effects. In contrast, when the donor material PEI was used, there was an increase in electrical conductivity and changes in the value and sign of the Seebeck coefficient from positive to negative, confirming n-type doping. PMID:26726653

  17. Perovskite LaRhO{sub 3} as a p-type active layer in oxide photovoltaics

    SciTech Connect

    Nakamura, Masao Krockenberger, Yoshiharu; Fujioka, Jun; Kawasaki, Masashi; Tokura, Yoshinori

    2015-02-16

    Perovskite-type transition-metal oxides have a wide variety of physical properties and triggered intensive research on functional devices in the form of heteroepitaxial junctions. However, there is a missing component that is a p-type conventional band semiconductor. LaRhO{sub 3} (LRO) is one of very few promising candidates having its bandgap between filled t{sub 2g} and empty e{sub g} of Rh in low-spin state, but there has been no report on the synthesis of large-size single crystals or thin films. Here, we report on the junction properties of single-crystalline thin films of LRO grown on (110) oriented Nb-doped SrTiO{sub 3} substrates. The external quantum efficiency of the photo-electron conversion exceeds 1% in the visible-light region due to the wide depletion layer and long diffusion length of minority carriers in LRO. Clear indication of p-type band semiconducting character in a perovskite oxide of LRO will pave a way to explore oxide electronics of perovskite heterostructures.

  18. Solution Synthesized p-Type Copper Gallium Oxide Nanoplates as Hole Transport Layer for Organic Photovoltaic Devices.

    PubMed

    Wang, Jian; Ibarra, Vanessa; Barrera, Diego; Xu, Liang; Lee, Yun-Ju; Hsu, Julia W P

    2015-03-19

    p-Type metal-oxide hole transport layer (HTL) suppresses recombination at the anode and hence improves the organic photovoltaic (OPV) device performance. While NiOx has been shown to exhibit good HTL performance, very thin films (<10 nm) are needed due to its poor conductivity and high absorption. To overcome these limitations, we utilize CuGaO2, a p-type transparent conducting oxide, as HTL for OPV devices. Pure delafossite phase CuGaO2 nanoplates are synthesized via microwave-assisted hydrothermal reaction in a significantly shorter reaction time compared to via conventional heating. A thick CuGaO2 HTL (∼280 nm) in poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) devices achieves 3.2% power conversion efficiency, on par with devices made with standard HTL materials. Such a thick CuGaO2 HTL is more compatible with large-area and high-volume printing process.

  19. Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

    NASA Astrophysics Data System (ADS)

    Dhere, Sunetra L.; Latthe, Sanjay S.; Kappenstein, Charles; Mukherjee, S. K.; Rao, A. Venkateswara

    2010-04-01

    Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 Å. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle ˜156°) while that on glass it is hydrophilic (contact angle ˜88°). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices.

  20. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    PubMed

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  1. Structural studies of P-type ATPase–ligand complexes using an X-ray free-electron laser

    SciTech Connect

    Bublitz, Maike; Nass, Karol; Drachmann, Nikolaj D.; Markvardsen, Anders J.; Gutmann, Matthias J.; Barends, Thomas R. M.; Mattle, Daniel; Shoeman, Robert L.; Doak, R. Bruce; Boutet, Sébastien; Messerschmidt, Marc; Seibert, Marvin M.; Williams, Garth J.; Foucar, Lutz; Reinhard, Linda; Sitsel, Oleg; Gregersen, Jonas L.; Clausen, Johannes D.; Boesen, Thomas; Gotfryd, Kamil; Wang, Kai -Tuo; Olesen, Claus; Møller, Jesper V.; Nissen, Poul; Schlichting, Ilme

    2015-06-11

    Membrane proteins are key players in biological systems, mediating signalling events and the specific transport ofe.g.ions and metabolites. Consequently, membrane proteins are targeted by a large number of currently approved drugs. Understanding their functions and molecular mechanisms is greatly dependent on structural information, not least on complexes with functionally or medically important ligands. Structure determination, however, is hampered by the difficulty of obtaining well diffracting, macroscopic crystals. Here, the feasibility of X-ray free-electron-laser-based serial femtosecond crystallography (SFX) for the structure determination of membrane protein–ligand complexes using microcrystals of various native-source and recombinant P-type ATPase complexes is demonstrated. The data reveal the binding sites of a variety of ligands, including lipids and inhibitors such as the hallmark P-type ATPase inhibitor orthovanadate. By analyzing the resolution dependence of ligand densities and overall model qualities, SFX data quality metrics as well as suitable refinement procedures are discussed. Even at relatively low resolution and multiplicity, the identification of ligands can be demonstrated. This makes SFX a useful tool for ligand screening and thus for unravelling the molecular mechanisms of biologically active proteins.

  2. Metal assisted anodic etching of silicon.

    PubMed

    Lai, Chang Quan; Zheng, Wen; Choi, W K; Thompson, Carl V

    2015-07-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si. PMID:26059556

  3. Quality evaluation of resistivity-controlled silicon crystals

    NASA Astrophysics Data System (ADS)

    Wang, Jong Hoe

    2006-01-01

    The segregation phenomenon of dopants causes a low production yield of silicon crystal that meets the resistivity tolerance required by device manufacturers. In order to control the macroscopic axial resistivity distribution in bulk crystal growth, numerous studies including continuous Czochralski method and double crucible technique have been studied. The simple B-P codoping method for improving the productivity of p-type silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. In this work, the quality of Czochralski-grown silicon single crystals with a diameter 200 mm using B-P codoping method was studied from the chemical and structural points of view. It was found that the characteristics of B-P codoped wafers including the oxygen precipitation behavior and the grown-in defects are same as that of conventional B-doped Czochralski crystals.

  4. Thick-film materials for silicon photovoltaic cell manufacture

    NASA Technical Reports Server (NTRS)

    Field, M. B.

    1977-01-01

    Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

  5. Characterization of the impurities in tungsten/silicon-germanium contacts

    SciTech Connect

    Gregg, H.A. Sr.

    1986-03-26

    Secondary ion mass spectrometry and Auger electron spectrometry depth profiling were used to determine impurity distributions in sputter deposited tungsten films over N-type and P-type 80/20 silicon-germanium elements of thermoelectric devices. These analyses showed that silicon, oxygen, sodium, boron, and phosphorous were present as impurities in the tungsten film. All these impurities except oxygen and sodium came from the substrate. Oxygen was gettered by the tungsten films, while sodium was possibly the result of sample handling. Further, the results from this study indicate that an oxide build-up, primarily at the tungsten/silicon-germanium interface of the N-type materials, is the major contributor to contact resistance in thermoelectric devices.

  6. Detection of Human Ig G Using Photoluminescent Porous Silicon Interferometer.

    PubMed

    Cho, Bomin; Kim, Seongwoong; Woo, Hee-Gweon; Kim, Sungsoo; Sohn, Honglae

    2015-02-01

    Photoluminescent porous silicon (PSi) interferometers having dual optical properties, both Fabry-Pérot fringe and photolumincence (PL), have been developed and used as biosensors for detection of Human Immunoglobin G (Ig G). PSi samples were prepared by electrochemical etching of p-type silicon under white light exposure. The surface of PSi was characterized using a cold field emission scanning electron microscope. The sensor system studied consisted of a single layer of porous silicon modified with Protein A. The system was probed with various fragments of aqueous human immunoglobin G (Ig G) analyte. Both reflectivity and PL were simultaneously measured under the exposure of human Ig G. An increase of optical thickness and decrease of PL were obtained under the exposure of human Ig G. Detection limit of 500 fM was observed for the human Ig G.

  7. Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

    SciTech Connect

    Veith-Wolf, Boris; Wang, Jianhui; Hannu-Kuure, Milja; Chen, Ning; Hadzic, Admir; Williams, Paul; Leivo, Jarkko; Karkkainen, Ari; Schmidt, Jan

    2015-02-02

    We apply non-vacuum processing to deposit dielectric capping layers on top of ultrathin atomic-layer-deposited aluminum oxide (AlO{sub x}) films, used for the rear surface passivation of high-efficiency crystalline silicon solar cells. We examine various siloxane-based liquid-phase-deposited (LPD) materials. Our optimized AlO{sub x}/LPD stacks show an excellent thermal and chemical stability against aluminum metal paste, as demonstrated by measured surface recombination velocities below 10 cm/s on 1.3 Ωcm p-type silicon wafers after firing in a belt-line furnace with screen-printed aluminum paste on top. Implementation of the optimized LPD layers into an industrial-type screen-printing solar cell process results in energy conversion efficiencies of up to 19.8% on p-type Czochralski silicon.

  8. Controlled intensity emission from patterned porous silicon using focused proton beam irradiation

    SciTech Connect

    Teo, E.J.; Mangaiyarkarasi, D.; Breese, M.B.H.; Bettiol, A.A.; Blackwood, D.J.

    2004-11-08

    We have fabricated light emitting porous silicon micropatterns with controlled emission intensity. This has been achieved by direct write irradiation in heavily doped p-type silicon (0.02 {omega} cm) using a 2 MeV proton beam, focused to a spot size of 200 nm. After electrochemical etching in hydrofluoric acid, enhanced photoluminescence is observed from the irradiated regions. The intensity of light emission is proportional to the dose of the proton beam, so the PL intensity of the micropattern can be tuned and varied between adjacent regions on a single substrate. This behavior is in contrast to previous ion beam patterning of p-type silicon, as light is preferentially created as opposed to quenched at the irradiated regions.

  9. FABRICATION OF A RETINAL PROSTHETIC TEST DEVICE USING ELECTRODEPOSITED SILICON OVER POLYPYRROLE PATTERNED WITH SU-8 PHOTORESIST

    PubMed Central

    Miller, Eric; Ellis, Daniel; Charles, Duran; McKenzie, Jason

    2016-01-01

    A materials fabrication study of a photodiode array for possible application of retina prosthesis was undertaken. A test device was fabricated using a glassy carbon electrode patterned with SU-8 photoresist. In the openings, p-type polypyrrole was first electrodeposited using 1-butyl-1-methylpyridinium bis(trifluoromethylsulfonyl)imide ionic liquid. The polypyrrole was self-doped with imide ion at ~1.5 mole %, was verified as p-type, and had a resistivity of ~20 Ωcm. N-type Silicon was then electrodeposited over this layer using silicon tetrachloride / phosphorus trichloride in acetonitrile and passivated in a second electrodeposition using trimethylchlorosilane. Electron microscopy revealed the successful electrodeposition of silicon over patterned polypyrrole. Rudimentary photodiode behavior was observed. The passivation improved but did not completely protect the electrodeposited silicon from oxidation by air. PMID:27616940

  10. FABRICATION OF A RETINAL PROSTHETIC TEST DEVICE USING ELECTRODEPOSITED SILICON OVER POLYPYRROLE PATTERNED WITH SU-8 PHOTORESIST

    PubMed Central

    Miller, Eric; Ellis, Daniel; Charles, Duran; McKenzie, Jason

    2016-01-01

    A materials fabrication study of a photodiode array for possible application of retina prosthesis was undertaken. A test device was fabricated using a glassy carbon electrode patterned with SU-8 photoresist. In the openings, p-type polypyrrole was first electrodeposited using 1-butyl-1-methylpyridinium bis(trifluoromethylsulfonyl)imide ionic liquid. The polypyrrole was self-doped with imide ion at ~1.5 mole %, was verified as p-type, and had a resistivity of ~20 Ωcm. N-type Silicon was then electrodeposited over this layer using silicon tetrachloride / phosphorus trichloride in acetonitrile and passivated in a second electrodeposition using trimethylchlorosilane. Electron microscopy revealed the successful electrodeposition of silicon over patterned polypyrrole. Rudimentary photodiode behavior was observed. The passivation improved but did not completely protect the electrodeposited silicon from oxidation by air.

  11. Process for producing silicon

    DOEpatents

    Olson, J.M.; Carleton, K.L.

    1982-06-10

    A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  12. Producing Silicon Carbide/Silicon Nitride Fibers

    NASA Technical Reports Server (NTRS)

    1986-01-01

    Manufacturing process makes CxSiyNz fibers. Precursor fibers spun from extruding machine charged with polycarbosilazane resin. When pyrolyzed, resin converted to cross-linked mixture of silicon carbide and silicon nitride, still in fiber form. CxSiyNz fibers promising substitutes for carbon fibers in high-strength, low-weight composites where high electrical conductivity unwanted.

  13. Electrodeposition of molten silicon

    DOEpatents

    De Mattei, Robert C.; Elwell, Dennis; Feigelson, Robert S.

    1981-01-01

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

  14. Efficient Silicon Reactor

    NASA Technical Reports Server (NTRS)

    Bates, H. E.; Hill, D. M.; Jewett, D. N.

    1983-01-01

    High-purity silicon efficiently produced and transferred by continuous two-cycle reactor. New reactor operates in relatively-narrow temperature rate and uses large surfaces area to minimize heat expenditure and processing time in producing silicon by hydrogen reduction of trichlorosilane. Two cycles of reactor consists of silicon production and removal.

  15. Electrodeposition of molten silicon

    SciTech Connect

    De Mattei, R.C.; Elwell, D.; Feigelson, R.S.

    1981-09-29

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is then removed from the bath.

  16. Exploiting p-Type Delayed Fluorescence in Hybrid White OLEDs: Breaking the Trade-off between High Device Efficiency and Long Lifetime.

    PubMed

    Zhang, Dongdong; Zhang, Deqiang; Duan, Lian

    2016-09-01

    Despite that the majority of practical organic light-emitting diodes (OLEDs) still rely on blue fluorophors with low triplet (T1) for creating blue light, hybrid white OLEDs based on low T1 blue fluorophors are still much lagged behind in power efficiency. Here, "ideal" hybrid WOLEDs with recorded efficiency as well as low roll-off, good color-stability and long lifetime were realized by utilizing the bipolar mixed materials as the host of green phosphor as well as the spacer to reduce T1 trap, while blue fluorophors with p-type delayed fluorescence to recycle the trapped T1. An electron transport material with both high electron mobility and good exciton confinement ability was used to boost the TTA efficiency. Hybrid WOLEDs with maximum current efficiency, external quantum efficiency and power efficiency of 49.6 cd/A, 19.1%, and 49.3 lm/W, respectively, together with a high color rendering index of 80 and a half lifetime of over 7000 h at an initial luminescence of 1000 cd/m(2) were realized, manifesting the high potential of the strategy.

  17. A combination of PhP typing and β-d-glucuronidase gene sequence variation analysis for differentiation of Escherichia coli from humans and animals.

    PubMed

    Masters, N; Christie, M; Katouli, M; Stratton, H

    2015-06-01

    We investigated the usefulness of the β-d-glucuronidase gene variance in Escherichia coli as a microbial source tracking tool using a novel algorithm for comparison of sequences from a prescreened set of host-specific isolates using a high-resolution PhP typing method. A total of 65 common biochemical phenotypes belonging to 318 E. coli strains isolated from humans and domestic and wild animals were analysed for nucleotide variations at 10 loci along a 518 bp fragment of the 1812 bp β-d-glucuronidase gene. Neighbour-joining analysis of loci variations revealed 86 (76.8%) human isolates and 91.2% of animal isolates were correctly identified. Pairwise hierarchical clustering improved assignment; where 92 (82.1%) human and 204 (99%) animal strains were assigned to their respective cluster. Our data show that initial typing of isolates and selection of common types from different hosts prior to analysis of the β-d-glucuronidase gene sequence improves source identification. We also concluded that numerical profiling of the nucleotide variations can be used as a valuable approach to differentiate human from animal E. coli. This study signifies the usefulness of the β-d-glucuronidase gene as a marker for differentiating human faecal pollution from animal sources.

  18. Prokaryotic silicon utilizing microorganisms in the biosphere

    NASA Astrophysics Data System (ADS)

    Gupta, D.; Das, S.

    2012-12-01

    Although a little study has been done to determine the silicon utilizing prokaryotes, our previous experiments indicated that almost all Gram-positive bacteria are silicon utilizing; one of them, Streptococci survived exposure on the lunar surface for a long period in experiment done by others. Our initial experiments with these Gram positive microorganisms showed that there were limited growths of these microorganisms on carbon free silicate medium probably with the help of some carry over carbon and nitrogen during cultivation procedures. However, increase in growth rate after repeated subcultures could not be explained at present. The main groups of prokaryotes which were found silicon utilizing microorganisms were Mycobacterium, Bacillus, Nocardia, Streptomyces, Staphylococcus, Streptococcus, Lactobacillus, and Clostridium. In a another previous study by us when silicon level was studied in such grown up cells on carbon "free" silicate medium by electron prove microanalyser, it was found that silicon in cells grown on carbon "free" silicate medium was much higher (24.9%) than those grown on conventional carbon based medium (0.84%). However, these initial findings are encouraging for our future application of this group of organisms on extraterrestrial surfaces for artificial micro-ecosystem formation. It was found that when electropositive elements are less in extraterrestrial situation, then polymerization of silicon-oxygen profusion may occur easily, particularly in carbon and nitrogen paucity in the rocky worlds of the Universe.

  19. Silicon heterojunction solar cell with passivated hole selective MoOx contact

    NASA Astrophysics Data System (ADS)

    Battaglia, Corsin; de Nicolás, Silvia Martín; De Wolf, Stefaan; Yin, Xingtian; Zheng, Maxwell; Ballif, Christophe; Javey, Ali

    2014-03-01

    We explore substoichiometric molybdenum trioxide (MoOx, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoOx, we observe a substantial gain in photocurrent of 1.9 mA/cm2 in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

  20. Silicon heterojunction solar cell with passivated hole selective MoO{sub x} contact

    SciTech Connect

    Battaglia, Corsin; Yin, Xingtian; Zheng, Maxwell; Javey, Ali; Martín de Nicolás, Silvia; De Wolf, Stefaan; Ballif, Christophe

    2014-03-17

    We explore substoichiometric molybdenum trioxide (MoO{sub x}, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO{sub x}, we observe a substantial gain in photocurrent of 1.9 mA/cm{sup 2} in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

  1. Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

    NASA Astrophysics Data System (ADS)

    Saseendran, Sandeep S.; Saravanan, S.; Raval, Mehul C.; Kottantharayil, Anil

    2016-03-01

    Low temperature oxidation of silicon in plasma ambient is a potential candidate for replacing thermally grown SiO2 films for surface passivation of crystalline silicon solar cells. In this work, we report the growth of silicon oxy-nitride (SiOxNy) film in N2O plasma ambient at 380 °C. However, this process results in trapping of interstitial oxygen within silicon. The impact of this trapped interstitial oxygen on the surface passivation quality is investigated. The interstitial oxygen trapped in silicon was seen to decrease for larger SiOxNy film thickness. Effective minority carrier lifetime (τeff) measurements on n-type float zone silicon wafers passivated by SiOxNy/silicon nitride (SiNv:H) stack showed a decrease in τeff from 347 μs to 68 μs, for larger SiOxNy film thickness due to degradation in interface properties. From high frequency capacitance-voltage measurements, it was concluded that the surface passivation quality was governed by the interface parameters (fixed charge density and interface state density). High temperature firing of the SiOxNy/SiNv:H stack resulted in a severe degradation in τeff due to migration of oxygen across the interface into silicon. However, on using the SiOxNy/SiNv:H stack for emitter surface passivation in screen printed p-type Si solar cells, an improvement in short wavelength response was observed in comparison to the passivation by SiNv:H alone, indicating an improvement in emitter surface passivation quality.

  2. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    NASA Astrophysics Data System (ADS)

    Li, Jingqi; Wang, Qingxiao; Yue, Weisheng; Guo, Zaibing; Li, Liang; Zhao, Chao; Wang, Xianbin; Abutaha, Anas I.; Alshareef, H. N.; Zhang, Yafei; Zhang, X. X.

    2014-07-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations.Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr00978a

  3. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    NASA Astrophysics Data System (ADS)

    Wan, Yimao; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-01

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiNx) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiNx stack, recombination current density J0 values of 9, 11, 47, and 87 fA/cm2 are obtained on 10 Ω.cm n-type, 0.8 Ω.cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J0 on n-type 10 Ω.cm wafers is further reduced to 2.5 ± 0.5 fA/cm2 when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiNx stack is thermally stable at 400 °C in N2 for 60 min on all four c-Si surfaces. Capacitance-voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiNx stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  4. Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Mandal, Aparajita; Kole, Arindam; Dasgupta, Arup; Chaudhuri, Partha

    2016-11-01

    Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel-Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

  5. n-p Type variation in thermoelectric AlMgB14-based materials by raw material mixture ratio

    NASA Astrophysics Data System (ADS)

    Fujima, Takuya; Arimatsu, Hideki; Miura, Shota; Yokoyama, Shun; Takagi, Ken-ichi

    2015-09-01

    We controlled the sign of Seebeck coefficient of AlMgB14-based thermoelectric materials by changing the raw material ratio for spark plasma sintering. The raw material powders of Al, Mg and B were mixed by V-shape mixer then sintered at 1773 K. Some sintered samples exhibited negative Seebeck coefficients and the others did positive as established for stoichiometric AlMgB14. The temperature dependence of electrical conductivity was different from each other type. Rietveld refinement for XRD results about the samples revealed that Mg site in the AlMgB14-lattice was occupied more for negative materials than the p-type ones and the negative samples had more valence electron than the other.

  6. Room temperature electrical properties of solution derived p-type Cu2ZnSnS4 thin films

    NASA Astrophysics Data System (ADS)

    Gupta, Goutam Kumar; Dixit, Ambesh

    2016-05-01

    Electrical properties of solution processed Cu2ZnSnS4 (CZTS) compound semiconductor thin film structures on molybdenum (Mo) coated glass substrates are investigated using Mott-Schottky and Impedance spectroscopy measurements at room temperature. These measurements are carried out in sodium sulfate (Na2SO4) electrolytic medium at pH ~ 9.5. The inversion/depletion/accumulation regions are clearly observed in CZTS semiconductor -Na2SO4 electrolyte interface and measured flat band potential is ~ -0.27 V for CZTS thin film electrode. The positive slope of the depletion region confirms the intrinsic p-type characteristics of CZTS thinfilms with ~ 2.5× 1019 holes/m3. The high frequency impedance measurements showed ~ 30 Ohm electrolyte resistance for the investigated configuration.

  7. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

    SciTech Connect

    Tracy, Lisa A; Reno, John L.; Hargett, Terry W.

    2015-09-01

    Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

  8. Reliability tests of electroless barriers against copper diffusion under bias-temperature stress with n- and p-type substrates

    NASA Astrophysics Data System (ADS)

    Ueno, Kazuyoshi; Fujishima, Shota; Yamashita, Makoto; Mitsumori, Akiyoshi

    2016-05-01

    To investigate the similarity and difference of substrate conduction type in the time-dependent dielectric breakdown (TDDB) tests for the barrier integrity against Cu diffusion under bias-temperature stress (BTS), the TDDB reliability of electroless NiB and CoWP/NiB was determined by metal oxide semiconductor (MOS) structures on n-type Si (n-Si) substrates, and the test results were compared with those using p-type Si (p-Si) substrates. The TDDB results and mechanism were observed to be qualitatively the same as Cu diffusion for both conduction types. However, the TDDB lifetime using p-Si was found to be potentially shorter because of the reverse bias conditions than that using n-Si under the forward bias conditions.

  9. Heavy p-type carbon doping of MOCVD GaAsP using CBrCl3

    NASA Astrophysics Data System (ADS)

    Heidelberger, Christopher; Fitzgerald, Eugene A.

    2016-07-01

    CBrCl3 is shown to be a useful precursor for heavy p-type carbon doping of GaAsxP1-x grown via metalorganic chemical vapor deposition (MOCVD) across a range of compositions. Structural and electrical properties of the GaAsP films were measured for various processing conditions. Use of CBrCl3 decreased the growth rate of GaAsP by up to 32% and decreases x by up to 0.025. The dependence of these effects on precursor inputs is investigated, allowing C-doped GaAsP films to be grown with good thickness and compositional control. Hole concentrations of greater than 2×1019 cm-3 were measured for values of x from 0.76 to 0.90.

  10. Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Taskar, N. R.; Natarajan, V.; Bhat, I. B.; Grandhi, S. K.

    1988-01-01

    In this paper we report on the extrinsic n- and p-doping of CdTe layers, grown by organometallic vapor phase epitaxy. Triethylindium and arsine gas were used as n- and p-type dopants respectively, with doping levels of around 1017 cm-3 in both cases. Layers were grown on both semi-insulating CdTe and GaAs substrates. Layers grown on semi-insulating GaAs had an intervening 1-2 μm undoped CdTe layer to relieve the strain caused by the large (14.6%) lattice mismatch of the CdTe-GaAs combination. Van der Pauw measurements were made to evaluate the quality of these layers, and mobility values as high as 3600 cm2/V h- s obtained at 40 K for lightly doped n-type samples. Grown junctions, made using extrinsic doped layers, have resulted in diodes with excellent electrical characteristics.

  11. Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Taskar, N. R.; Natarajan, V.; Bhat, I. B.; Grandhi, S. K.

    1990-01-01

    In this paper we report on the extrinsic n- and p-doping of CdTe layers, grown by organometallic vapor phase epitaxy. Triethylindium and arsine gas were used as n- and p-type dopants respectively, with doping levels of around 10 17 cm -3 in both cases. Layers were grown on both semi-insulating CdTe and GaAs substrates. Layers grown on semi-insulating GaAs had an intervening 1-2 μm undoped CdTe layer to relieve the strain caused by the large (14.6%) lattice mismatch of the CdTe-GaAs combination. Van der Pauw measurements were made to evaluate the quality of these layers, and mobility values as high as 3600 cm 2/V h- s obtained at 40 K for lightly doped n-type samples. Grown junctions, made using extrinsic doped layers, have resulted in diodes with excellent electrical characteristics.

  12. Fabrication of Transparent p-Type CuxZnyS Thin Films by the Electrochemical Deposition Method

    NASA Astrophysics Data System (ADS)

    Yang, Kai; Ichimura, Masaya

    2011-04-01

    CuxZnyS thin films were deposited on indium-tin oxide-coated glass substrates by the electrochemical deposition (ECD) method using aqueous solutions containing CuSO4, ZnSO4, and Na2S2O3. The film deposited under optimum conditions exhibited a high optical transmission, and its energy band gap was about 3.2 eV. It was confirmed that CuxZnyS showed p-type conduction and photosensitivity. To fabricate a ZnO/CuxZnyS heterojunction, an n-type ZnO thin film was deposited on CuxZnyS by ECD. In a current-voltage measurement, the heterojunction showed rectification properties.

  13. p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy

    SciTech Connect

    Xiu, F.X.; Yang, Z.; Mandalapu, L.J.; Liu, J.L.; Beyermann, W. P.

    2006-01-30

    Phosphorus-doped p-type ZnO films were grown on r-plane sapphire substrates using molecular-beam epitaxy with a solid-source GaP effusion cell. X-ray diffraction spectra and reflection high-energy electron diffraction patterns indicate that high-quality single crystalline (1120) ZnO films were obtained. Hall and resistivity measurements show that the phosphorus-doped ZnO films have high hole concentrations and low resistivities at room temperature. Photoluminescence (PL) measurements at 8 K reveal a dominant acceptor-bound exciton emission with an energy of 3.317 eV. The acceptor energy level of the phosphorus dopant is estimated to be 0.18 eV above the valence band from PL spectra, which is also consistent with the temperature dependence of PL measurements.

  14. Photocatalytic reduction of carbon dioxide on p-type CaFe[sub 2]O[sub 4] powder

    SciTech Connect

    Matsumoto, Yasumichi; Obata, Michio; Hombo, Jukichi )

    1994-03-17

    The photocatalytic reduction of CO[sub 2] on p-type CaFe[sub 2]O[sub 4] powder has been studied in water. CH[sub 3]OH and HCHO were produced under illumination. The additions of NaH[sub 2]PO[sub 2] and BaCO[sub 3] promoted the CO[sub 2] reduction reaction on the CaFe[sub 2]O[sub 4] photocatalyst. It was proven from the dependence of the amount of CH[sub 3]OH produced on the wavelength of the illuminated light that the electron produced in the conduction band of the CaFe[sub 2]O[sub 4] reduces CO[sub 2]. The mechanism for the photocatalytic reduction of CO[sub 2] on CaFe[sub 2]O[sub 4] is briefly discussed. 10 refs., 4 figs.

  15. Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

  16. Effect of oxygen incorporation in a-plane GaN on p-type ohmic contact property

    NASA Astrophysics Data System (ADS)

    Jung, Ki-Chang; Lee, Inwoo; Park, Jaehyoung; Bae, Hyojung; Kim, Chung Yi; Shin, Hui-Youn; Kim, Hyung-Gu; Jeon, Jina; Jung, S.; Choi, Yoon-Ho; Lee, Jung-Soo; Ha, Jun-Seok

    2014-09-01

    We report on the origin of the non-ohmic behavior of Ni/Au-based p-type contacts on a nonpolar a-plane GaN layer. The contact properties of Ga-polar c-plane GaN and nonpolar a-plane GaN are compared. While the Ga-polar c-plane shows ohmic-contact properties in the Ni/Au contact after heat treatment, the nonpolar a-plane shows rectifying characteristics both before and after heat treatment. We determined the reasons why the two planes show substantial differences in contact properties using various tools. We conclude that the differences originated from the oxygen incorporation preference resulting in gallium oxide formation at the interface of nonpolar a-plane GaN.

  17. Photoinduced magnetization effect in a p -type Hg1 -xMnxTe single crystal investigated by infrared photoluminescence

    NASA Astrophysics Data System (ADS)

    Zhu, Liangqing; Shao, Jun; Chen, Xiren; Li, Yanqiu; Zhu, Liang; Qi, Zhen; Lin, Tie; Bai, Wei; Tang, Xiaodong; Chu, Junhao

    2016-10-01

    Photoinduced magnetization (PIM) effect of Hg1 -xMnxTe provides an attractive solution for realizing the quantum anomalous Hall effect in quantum wells with a light field. In this paper, the PIM effect of p -type Hg0.74Mn0.26Te single crystal was investigated by power-, polarization- and temperature-dependent photoluminescence (PL) measurements in both reflection and transmission geometries. Giant Zeeman splitting and polarization of PL spectra were observed without an external magnetic field evolving with excitation-power density of the pumping laser and temperature, which were accounted for by the PIM effect. The occurrence of the PIM was qualitatively understandable by the carrier-mediated mean-field theory known as the Zener model. The results indicate that infrared PL measurements with enhanced sensitivity and signal-to-noise ratio can serve as a convenient pathway for clarifying the PIM effect of semimagnetic semiconductors.

  18. Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4

    NASA Astrophysics Data System (ADS)

    Niesner, D.; Otto, S.; Hermann, V.; Fauster, Th.; Menshchikova, T. V.; Eremeev, S. V.; Aliev, Z. S.; Amiraslanov, I. R.; Babanly, M. B.; Echenique, P. M.; Chulkov, E. V.

    2014-02-01

    Time-resolved two-photon photoemission was used to study the electronic structure and dynamics at the surface of SnSb2Te4, a p-type topological insulator. The Dirac point is found 0.32±0.03 eV above the Fermi level. Electrons from the conduction band minimum are scattered on a time scale of 43±4 fs to the Dirac cone. From there they decay to the partly depleted valence band with a time constant of 78±5 fs. The significant interaction of the Dirac states with bulk bands is attributed to their bulk penetration depth of ˜3 nm as found from density functional theory calculations.

  19. A study of p-type ohmic contacts to InAlAs/InGaAs heterostructures

    SciTech Connect

    Briggs, R.D.; Howard, A.J.; Baca, A.G.; Hafich, M.J.; Vawter, G.A.

    1995-12-31

    Optical modulators operating at near-infrared wavelengths are of interest for a variety of applications including bidirectional communications and optical interconnects. The fabrication of 1.06 {micro}m and 1.32 {micro}m operating wavelength strained-layer-superlattice vertical-cavity optoelectronic modulators requires the formation of a p-type ohmic contact to the InAlAs/InGaAs quarter-wave bottom mirror stack. In this study, BeAu and TiPtAu p-type ohmic contact metallization schemes were evaluated for use on molecular beam epitaxy (MBE) grown In{sub .10}Al{sub .90}As/In{sub .12}Ga{sub .88}As and In{sub .32}Al{sub .68}As/In{sub .33}Ga{sub .67}As device heterostructures. Recessed and nonrecessed transmission line measurement (TLM) structures were fabricated and evaluated as a function of rapid thermal anneal (RTA) temperatures over the range of 360 C--420 C. Atomic force microscopy (AFM) was used to determine the surface morphology of each sample for evidence of metal or material degradation. For contacts directly on InGaAs layers, TiPtAu contacts had relatively high specific contact resistance values of {rho}{sub c} {approximately} 3 {times} 10{sup {minus}4} {Omega}cm{sup 2} and displayed no dependence on the anneal. The BeAu contacts had minimum specific contact resistance values of {rho}{sub c} {approximately} 5 {times} 10{sup {minus}7} {Omega}cm{sup 2} but showed evidence of degradation at higher temperatures. Contacts directly made to InAlAs layers had minimum specific contact resistances of {rho}{sub c} {approximately} 4 {times} 10{sup {minus}5} {Omega}cm{sup 2} and were improved slightly with the addition of a thin GaAs layer.

  20. Deep levels induced by reactive ion etching in n- and p-type 4H-SiC

    SciTech Connect

    Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu; Krieger, Michael

    2010-07-15

    In this study, the authors investigate deep levels, which are induced by reactive ion etching (RIE) of n-type/p-type 4H-SiC, by deep level transient spectroscopy (DLTS). The capacitance of a Schottky contact fabricated on as-etched p-type SiC is abnormally small due to compensation or deactivation of acceptors extending to a depth of {approx}14 {mu}m, which is nearly equal to the epilayer thickness. The value of the capacitance can recover to that of a Schottky contact on as-grown samples after annealing at 1000 deg. C. However, various kinds of defects, IN2 (E{sub C}-0.30 eV), EN (E{sub C}-1.6 eV), IP1 (E{sub V}+0.30 eV), IP2 (E{sub V}+0.39 eV), IP4 (HK0: E{sub V}+0.72 eV), IP5 (E{sub V}+0.85 eV), IP7 (E{sub V}+1.3 eV), and EP (E{sub V}+1.4 eV), remain at a high concentration (average of total defect concentration in the region ranging from 0.3 {mu}m to 1.0 {mu}m:{approx}5x10{sup 14} cm{sup -3}) even after annealing at 1000 deg. C. The concentration of all these defects generated by RIE, except for the IP4 (HK0) center, remarkably decreases by thermal oxidation. In addition, the HK0 center can also be reduced significantly by a subsequent annealing at 1400 deg. C in Ar.

  1. High thermoelectric performance of p-type SnTe via a synergistic band engineering and nanostructuring approach.

    PubMed

    Tan, Gangjian; Zhao, Li-Dong; Shi, Fengyuan; Doak, Jeff W; Lo, Shih-Han; Sun, Hui; Wolverton, Chris; Dravid, Vinayak P; Uher, Ctirad; Kanatzidis, Mercouri G

    2014-05-14

    SnTe is a potentially attractive thermoelectric because it is the lead-free rock-salt analogue of PbTe. However, SnTe is a poor thermoelectric material because of its high hole concentration arising from inherent Sn vacancies in the lattice and its very high electrical and thermal conductivity. In this study, we demonstrate that SnTe-based materials can be controlled to become excellent thermoelectrics for power generation via the successful application of several key concepts that obviate the well-known disadvantages of SnTe. First, we show that Sn self-compensation can effectively reduce the Sn vacancies and decrease the hole carrier density. For example, a 3 mol % self-compensation of Sn results in a 50% improvement in the figure of merit ZT. In addition, we reveal that Cd, nominally isoelectronic with Sn, favorably impacts the electronic band structure by (a) diminishing the energy separation between the light-hole and heavy-hole valence bands in the material, leading to an enhanced Seebeck coefficient, and (b) enlarging the energy band gap. Thus, alloying with Cd atoms enables a form of valence band engineering that improves the high-temperature thermoelectric performance, where p-type samples of SnCd(0.03)Te exhibit ZT values of ~0.96 at 823 K, a 60% improvement over the Cd-free sample. Finally, we introduce endotaxial CdS or ZnS nanoscale precipitates that reduce the lattice thermal conductivity of SnCd(0.03)Te with no effect on the power factor. We report that SnCd(0.03)Te that are endotaxially nanostructured with CdS and ZnS have a maximum ZTs of ~1.3 and ~1.1 at 873 K, respectively. Therefore, SnTe-based materials could be ideal alternatives for p-type lead chalcogenides for high temperature thermoelectric power generation.

  2. High thermoelectric performance of p-type SnTe via a synergistic band engineering and nanostructuring approach.

    PubMed

    Tan, Gangjian; Zhao, Li-Dong; Shi, Fengyuan; Doak, Jeff W; Lo, Shih-Han; Sun, Hui; Wolverton, Chris; Dravid, Vinayak P; Uher, Ctirad; Kanatzidis, Mercouri G

    2014-05-14

    SnTe is a potentially attractive thermoelectric because it is the lead-free rock-salt analogue of PbTe. However, SnTe is a poor thermoelectric material because of its high hole concentration arising from inherent Sn vacancies in the lattice and its very high electrical and thermal conductivity. In this study, we demonstrate that SnTe-based materials can be controlled to become excellent thermoelectrics for power generation via the successful application of several key concepts that obviate the well-known disadvantages of SnTe. First, we show that Sn self-compensation can effectively reduce the Sn vacancies and decrease the hole carrier density. For example, a 3 mol % self-compensation of Sn results in a 50% improvement in the figure of merit ZT. In addition, we reveal that Cd, nominally isoelectronic with Sn, favorably impacts the electronic band structure by (a) diminishing the energy separation between the light-hole and heavy-hole valence bands in the material, leading to an enhanced Seebeck coefficient, and (b) enlarging the energy band gap. Thus, alloying with Cd atoms enables a form of valence band engineering that improves the high-temperature thermoelectric performance, where p-type samples of SnCd(0.03)Te exhibit ZT values of ~0.96 at 823 K, a 60% improvement over the Cd-free sample. Finally, we introduce endotaxial CdS or ZnS nanoscale precipitates that reduce the lattice thermal conductivity of SnCd(0.03)Te with no effect on the power factor. We report that SnCd(0.03)Te that are endotaxially nanostructured with CdS and ZnS have a maximum ZTs of ~1.3 and ~1.1 at 873 K, respectively. Therefore, SnTe-based materials could be ideal alternatives for p-type lead chalcogenides for high temperature thermoelectric power generation. PMID:24785377

  3. Glass-silicon column

    DOEpatents

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  4. Porous silicon gettering

    SciTech Connect

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M.

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  5. Study of the crystal structure of silicon nanoislands on sapphire

    SciTech Connect

    Krivulin, N. O. Pirogov, A. V.; Pavlov, D. A.; Bobrov, A. I.

    2015-02-15

    The results of studies of the crystal structure of silicon nanoislands on sapphire are reported. It is shown that the principal defects in silicon nanoislands on sapphire are twinning defects. As a result of the formation of such defects, different crystallographic orientations are formed in silicon nanoislands on sapphire. In the initial stages of the molecular-beam epitaxy of silicon on sapphire, there are two basic orientations: the (001) orientation parallel to the surface and the (001) orientation at an angle of 70° to the surface.

  6. Distal ventriculoperitoneal shunt failure caused by silicone allergy. Case report.

    PubMed

    Hussain, Namath S; Wang, Paul P; James, Carol; Carson, Benjamin S; Avellino, Anthony M

    2005-03-01

    The placement of a ventriculoperitoneal (VP) shunt is the most common form of treatment for hydrocephalus. Although allergic reactions to the silicone in shunt hardware are very rare, the authors describe a case of silicone allergy causing multiple ventricular shunt revisions. A 24-year-old man, who had undergone multiple VP shunt revisions, presented with shunt malfunction caused by allergic reaction of the tissues surrounding the shunt tubing. The patient's existing silicone-based shunt was replaced with a new polyurethane system, including the proximal and distal catheters as well as the valve mechanism. Contrary to recommendations in previous studies of silicone shunt allergies, long-term immunosuppression was not initiated. The patient was followed up for more than 8 years without recurrence of an allergic reaction to the shunt. This outcome indicates that replacing the original silicone-based shunt system with a polyurethane-based system alone is sufficient in the treatment of a silicone shunt allergy.

  7. Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon

    NASA Astrophysics Data System (ADS)

    Zirkelbach, F.; Stritzker, B.; Nordlund, K.; Lindner, J. K. N.; Schmidt, W. G.; Rauls, E.

    2011-08-01

    Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and first-principles methods are presented. The calculations aim at a comprehensive, microscopic understanding of the precipitation mechanism in the context of controversial discussions in the literature. For the quantum-mechanical treatment, basic processes assumed in the precipitation process are calculated in feasible systems of small size. The migration mechanism of a carbon <100> interstitial and silicon <110> self-interstitial in otherwise defect-free silicon are investigated using density functional theory calculations. The influence of a nearby vacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been investigated systematically. Interactions of various combinations of defects have been characterized including a couple of selected migration pathways within these configurations. Most of the investigated pairs of defects tend to agglomerate allowing for a reduction in strain. The formation of structures involving strong carbon-carbon bonds turns out to be very unlikely. In contrast, substitutional carbon occurs in all probability. A long range capture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies. A rather small capture radius is predicted for substitutional carbon and silicon self-interstitials. Initial assumptions regarding the precipitation mechanism of silicon carbide in bulk silicon are established and conformability to experimental findings is discussed. Furthermore, results of the accurate first-principles calculations on defects and carbon diffusion in silicon are compared to results of classical potential simulations revealing significant limitations of the latter method. An approach to work around this problem is proposed. Finally, results of the classical potential molecular dynamics simulations of large systems are examined

  8. Electrical creation of spin polarization in silicon at room temperature

    NASA Astrophysics Data System (ADS)

    Jansen, Ron

    2010-03-01

    The integration of magnetism and mainstream semiconductor electronics could impact information technology in ways beyond imagination. A pivotal step is the implementation of spin-based electronic functionality in silicon devices. Much of the interest in silicon derives from its prevalence in semiconductor technology and from the robustness and longevity of spin as it is only weakly coupled to other degrees of freedom in the material. Recently it has become possible to induce and detect spin polarization in otherwise non-magnetic semiconductors (GaAs and Si) using all-electrical structures, but so far at temperatures below 150 K and only in n-type material. The main challenges are: (i) to design fully electrical silicon-based spintronic devices with large spin signals, (ii) to demonstrate device operation at room temperature, (iii) to do so for n-type and p-type material, and (iv) to find ways to manipulate spins and spin flow with a gate electric field. After a brief overview of the state of affairs, our recent advances in these areas are described. In particular, we demonstrate room-temperature electrical injection of spin polarization into n-type and p-type silicon from a ferromagnetic tunnel contact, spin manipulation using the Hanle effect, and the electrical detection of the induced spin accumulation. It is shown that a spin splitting as large as 2.9 meV can be created in Si at room temperature, corresponding to an electron spin polarization of 4.6%. The results open the way to the implementation of spin functionality in complementary silicon devices and electronic circuits operating at ambient temperature, and to the exploration of their prospects as well as the fundamental rules that govern their behavior. [4pt] [1] S.P. Dash, S. Sharma, R.S. Patel, M.P. de Jong and R. Jansen, Nature 462, 491 (2009).

  9. Impact of incorporating sodium into polycrystalline p-type Cu{sub 2}O for heterojunction solar cell applications

    SciTech Connect

    Minami, Tadatsugu Nishi, Yuki; Miyata, Toshihiro

    2014-11-24

    The resistivity was controlled in the range of 10{sup 3} to 10{sup −2} Ω cm in polycrystalline p-type Cu{sub 2}O sheets (incorporating sodium (Na)), which are suitable for Cu{sub 2}O-based heterojunction solar cell applications. The Na-doped Cu{sub 2}O sheets exhibited a hole concentration that ranged from 10{sup 13} to 10{sup 19 }cm{sup −3}. In particular, a hole concentration of 10{sup 13}–10{sup 16 }cm{sup −3} was obtained while maintaining a high Hall mobility above 100 cm{sup 2}/V s, and, in addition, a degenerated semiconductor exhibiting metallic conduction was realized with a hole concentration above about 1 × 10{sup 19 }cm{sup −3}. The mechanism associated with the Na doping can be explained by a copper vacancy produced due to charge compensation effects that result when a Na atom is incorporated at an interstitial site in the Cu{sub 2}O lattice. For solar cell applications, the use of the Cu{sub 2}O:Na sheet in a heterojunction solar cell successfully improved the obtained efficiency over that found in heterojunction solar cells fabricated using an undoped Cu{sub 2}O sheet.

  10. Work function engineering of ZnO electrodes by using p-type and n-type doped carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Urbina, Antonio; Park, Ji Sun; Lee, Ju Min; Ouk Kim, Sang; Kim, Ji-Seon

    2013-12-01

    Transparent electrodes in organic electronic devices are strongly needed in order to replace indium tin oxide (ITO). Some of the best candidates are ZnO films, which have shown both good electronic properties and solution processability compatible with roll-to-roll production of the devices. We present the possibility to engineer the work function of ZnO by blending it with carbon nanotubes (CNTs). B-doped (p-type), N-doped (n-type) and undoped CNTs as well as their blends with ZnO have been characterized by atomic force microscopy (AFM), scanning Kelvin probe microscopy (SKPM) and Raman spectroscopy. The results of Raman spectroscopy demonstrate the substitutional doping of carbon nanotubes, which preserves their covalent structure although increasing the disorder within the nanotubes. The roughness and average shape of grains of ZnO when blended with the doped nanotubes have been measured by AFM. Finally, SKPM shows that the work function of the blends can be engineered from 4.4 ± 0.1 to 4.9 ± 0.1 eV according to the kind of nanotube that is blended even if only a small amount of nanotubes is added to the blend (0.08 wt%).

  11. Electrical Detection of the Helical Spin Texture in a p-type Topological Insulator Sb2Te3.

    PubMed

    Li, C H; van 't Erve, O M J; Li, Y Y; Li, L; Jonker, B T

    2016-01-01

    The surface states of 3D topological insulators (TIs) exhibit a helical spin texture with spin locked at right angles with momentum. The chirality of this spin texture is expected to invert crossing the Dirac point, a property that has been experimentally observed by optical probes. Here, we directly determine the chirality below the Dirac point by electrically detecting spin-momentum locking in surface states of a p-type TI, Sb2Te3. A current flowing in the Sb2Te3 surface states generates a net spin polarization due to spin-momentum locking, which is electrically detected as a voltage on an Fe/Al2O3 tunnel barrier detector. Measurements of this voltage as a function of current direction and detector magnetization indicate that hole spin-momentum locking follows the right-hand rule, opposite that of electron, providing direct confirmation that the chirality is indeed inverted below Dirac point. The spin signal is linear with current, and exhibits a temperature dependence consistent with the semiconducting nature of the TI film and freeze-out of bulk conduction below 100 K. Our results demonstrate that the chirality of the helical spin texture of TI surface states can be determined electrically, an enabling step in the electrical manipulation of spins in next generation TI-based quantum devices.

  12. Effect of Al Doping on Performance of CuGaO2 p-Type Dye-Sensitized Solar Cells

    NASA Astrophysics Data System (ADS)

    Ursu, D.; Vaszilcsin, N.; Bănica, R.; Miclau, M.

    2016-01-01

    The p-type semiconductor Cu(I)-based delafossite transparent conducting oxides are good candidates to be used as hole collectors in dye-sensitized solar cells. The Al-doped CuGaO2 has been synthesized by hydrothermal method and its properties have been investigated as cathode elements in ruthenium dye N719-sensitized solar cells. The photocurrent density ( J sc) and the open-circuit voltage ( V oc) for 5% Al-doped CuGaO2 microparticles using N719 dye were approximately two times higher than undoped CuGaO2 microparticles. The integration of aluminum dopants in the delafossite structure improves the photovoltaic performance of CuGaO2 thin films, due to the excellent optical transparency of CuGaO2 in the visible range as well as the improved electrical conductivity caused by the apparition of the intrinsic acceptor defect associate (Al Cu •• 2O i ″ )″ with tetrahedrally coordinated Al on the Cu-site.

  13. First-principles study of transparent p-type conductive SrCu2O2 and related compounds

    NASA Astrophysics Data System (ADS)

    Nie, Xiliang; Wei, Su-Huai; Zhang, S. B.

    2002-02-01

    Using first-principles band structure methods we have systematically studied the electronic and optical properties of p-type transparent conductive oxides SrCu2O2 and related compounds AIICu2O2, where A=Mg, Ca, and Ba, as well as their host material Cu2O. We show that all these compounds have direct band gap at the zone center (Γ) with SrCu2O2 having the largest band gap. The trend of band gap variation of AIICu2O2 as a function of AII is explained in terms of atomic energy levels and atomic sizes of the AII elements. Transparency of SrCu2O2 is explained by the calculated dipole transition matrix elements. The calculated effective masses for the conduction band states are found to be larger than those for the valence states for SrCu2O2, opposite to the trend in conventional semiconductors and n-type transparent conductive oxides. We predict that adding a small amount of Ca (~16%) into SrCu2O2 can increase the band gap and reduce the hole effective mass of SrCu2O2, therefore, increase the transparency and conductivity.

  14. Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

    NASA Astrophysics Data System (ADS)

    Umana-Membreno, G. A.; Klein, B.; Kala, H.; Antoszewski, J.; Gautam, N.; Kutty, M. N.; Plis, E.; Krishna, S.; Faraone, L.

    2012-12-01

    Vertical minority carrier electron transport parameters in p-type InAs/GaSb type-II superlattices for long wavelength infrared (LWIR) detection have been extracted from magnetic field dependent geometrical magneto-resistance. The measurements, performed at low electric fields and at magnetic field intensities up to 12 T, exhibited multiple-carrier conduction characteristics that required mobility spectrum analysis for the extraction of individual carrier mobilities and concentrations. Within the common operating temperature range for LWIR photodiodes (80 to 150 K), the conductivity was found to be dominated by three distinct carriers, attributed to majority holes (μ =280±27 cm2/Vs), minority electrons (μ =2,460±75 cm2/Vs), and parasitic sidewall inversion layer electrons (μ =930±55 cm2/Vs). A miniband energy gap of 140 ± 15 meV for the 14/7-monolayer InAs/GaSb superlattice was estimated from the thermal activation of the minority carrier electron density.

  15. Realizing high figure of merit in heavy-band p-type half-Heusler thermoelectric materials.

    PubMed

    Fu, Chenguang; Bai, Shengqiang; Liu, Yintu; Tang, Yunshan; Chen, Lidong; Zhao, Xinbing; Zhu, Tiejun

    2015-01-01

    Solid-state thermoelectric technology offers a promising solution for converting waste heat to useful electrical power. Both high operating temperature and high figure of merit zT are desirable for high-efficiency thermoelectric power generation. Here we report a high zT of ∼1.5 at 1,200 K for the p-type FeNbSb heavy-band half-Heusler alloys. High content of heavier Hf dopant simultaneously optimizes the electrical power factor and suppresses thermal conductivity. Both the enhanced point-defect and electron-phonon scatterings contribute to a significant reduction in the lattice thermal conductivity. An eight couple prototype thermoelectric module exhibits a high conversion efficiency of 6.2% and a high power density of 2.2 W cm(-2) at a temperature difference of 655 K. These findings highlight the optimization strategy for heavy-band thermoelectric materials and demonstrate a realistic prospect of high-temperature thermoelectric modules based on half-Heusler alloys with low cost, excellent mechanical robustness and stability.

  16. Enhancing thermopower and hole mobility in bulk p-type half-Heuslers using full-Heusler nanostructures.

    PubMed

    Sahoo, Pranati; Liu, Yuanfeng; Makongo, Julien P A; Su, Xian-Li; Kim, Sung Joo; Takas, Nathan; Chi, Hang; Uher, Ctirad; Pan, Xiaoqing; Poudeu, Pierre F P

    2013-10-01

    The concept of band structure engineering near the Fermi level through atomic-scale alteration of a bulk semiconductor crystal structure using coherently embedded intrinsic semiconducting quantum dots provides a unique opportunity to manipulate the transport behavior of the existing ensembles of carriers within the semiconducting matrix. Here we show that in situ growth of coherent nanometer-scale full-Heusler quantum dots (fH-QDs) within the p-type Ti(0.5)Hf(0.5)CoSb(0.9)Sn(0.1) half-Heusler (hH) matrix induces a drastic decrease of the effective hole density within the hH/fH-QD nanocomposites at 300 K followed by a sharp increase with rising temperature. This behavior is associated with the formation of staggered heterojunctions with a valence band (VB) offset energy, ΔE at the hH/fH phase boundaries. The energy barrier (ΔE) discriminates existing holes with respect to their energy by trapping low energy (LE) holes, while promoting the transport of high energy (HE) holes through the VB of the fH-QDs. This "hole culling" results in surprisingly large increases in the mobility and the effective mass of HE holes contributing to electronic conduction. The simultaneous reduction in the density and the increase in the effective mass of holes resulted in large enhancements of the thermopower whereas; the increase in the mobility minimizes the drop in the electrical conductivity.

  17. Fabrication and Characterization of p-Type SnO Thin Film with High c-Axis Preferred Orientation

    NASA Astrophysics Data System (ADS)

    Pei, Yanli; Liu, Wuguang; Shi, Jingtao; Chen, Zimin; Wang, Gang

    2016-08-01

    p-Type tin monoxide (SnO) thin films with high c-axis preferred orientation have been fabricated on quartz substrate via electron-beam evaporation at 280°C. Subsequently, rapid thermal annealing (RTA) was performed in N2 atmosphere at 400°C to 800°C. Their structural, chemical, optical, and electrical properties were investigated by x-ray diffraction analysis, ultraviolet-visible spectroscopy, scanning electron microscopy, x-ray photoelectron spectroscopy, and Hall-effect measurements. The c-axis-oriented films of Sn-rich SnO presented excellent thermal stability up to RTA at 700°C. Both the crystallization and the hole Hall mobility were enhanced with increasing RTA temperature, with Hall mobility of 16 cm2 V-1 s-1 being obtained after RTA at 700°C. It was considered that the presence of defects and low scattering from grain boundaries contributed to this high Hall mobility. RTA annealing temperature above 700°C induced chemical reaction between SnO and the quartz substrate, with a change of the film to amorphous state with Sn4+ formation.

  18. Screening of inorganic wide-bandgap p-type semiconductors for high performance hole transport layers in organic photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Ginley, David; Zakutayev, Andriy; Garcia, Andreas; Widjonarko, Nicodemus; Ndione, Paul; Sigdel, Ajaya; Parilla, Phillip; Olson, Dana; Perkins, John; Berry, Joseph

    2011-03-01

    We will report on the development of novel inorganic hole transport layers (HTL) for organic photovoltaics (OPV). All the studied materials belong to the general class of wide-bandgap p-type oxide semiconductors. Potential candidates suitable for HTL applications include SnO, NiO, Cu2O (and related CuAlO2, CuCrO2, SrCu2O4 etc) and Co3O4 (and related ZnCo2O4, NiCo2O4, MgCo2O4 etc.). Materials have been optimized by high-throughput combinatorial approaches. The thin films were deposited by RF sputtering and pulsed laser deposition at ambient and elevated temperatures. Performance of the inorganic HTLs and that of the reference organic PEDOT:PSS HTL were compared by measuring the power conversion efficiencies and spectral responses of the P3HT/PCBM- and PCDTBT/PCBM-based OPV devices. Preliminary results indicate that Co3O4-based HTLs have performance comparable to that of our previously reported NiOs and PEDOT:PSS HTLs, leading to a power conversion efficiency of about 4 percent. The effect of composition and work function of the ternary materials on their performance in OPV devices is under investigation.

  19. Electronic structure and optical property of p-type Zn-doped SnO2 with Sn vacancy

    NASA Astrophysics Data System (ADS)

    Guipeng, Sun; Jinliang, Yan; Peijiang, Niu; Delan, Meng

    2016-02-01

    The electronic structures and optical properties of intrinsic SnO2, Zn-doped SnO2, SnO2 with Sn vacancy (VSn) and Zn-doped SnO2 with Sn vacancy are explored by using first-principles calculations. Zn-doped SnO2 is a p-type semiconductor material, whose Fermi level shifts into the valence band when Zn atoms substitute Sn atoms, and the unoccupied states on the top of the valence band come from Zn 3d and O 2p states. Sn vacancies increase the relative hole number of Zn-doped SnO2, which results in a possible increase in the conductivity of Zn-doped SnO2. The Zn-doped SnO2 shows distinct visible light absorption, the increased absorption can be seen apparently with the presence of Sn vacancies in the crystal, and the blue-shift of optical spectra can be observed. Project supported by the National Natural Science Foundation of China (No. 10974077) and the Innovation Project of Shandong Graduate Education, China (No. SDYY13093).

  20. High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

    NASA Astrophysics Data System (ADS)

    Arakawa, Yasuaki; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-08-01

    We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-temperature pulsed sputtering deposition (PSD) process. The growth system is inherently hydrogen-free, allowing us to obtain high-purity Mg-doped GaN films with residual hydrogen concentrations below 5 × 1016 cm-3, which is the detection limit of secondary ion mass spectroscopy. In the Mg profile, no memory effect or serious dopant diffusion was detected. The as-deposited Mg-doped GaN films showed clear p-type conductivity at room temperature (RT) without thermal activation. The GaN film doped with a low concentration of Mg (7.9 × 1017 cm-3) deposited by PSD showed hole mobilities of 34 and 62 cm2 V-1 s-1 at RT and 175 K, respectively, which are as high as those of films grown by a state-of-the-art metal-organic chemical vapor deposition apparatus. These results indicate that PSD is a powerful tool for the fabrication of GaN-based vertical power devices.