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Sample records for inns

  1. 15. LOOKING WEST TOWARD OLD FAITHFUL INN. THE INN'S NAMESAKE, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. LOOKING WEST TOWARD OLD FAITHFUL INN. THE INN'S NAMESAKE, OLD FAITHFUL GEYSER IS AT LEFT. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  2. Colloids in the River Inn

    NASA Astrophysics Data System (ADS)

    Ueckert, Martina; Niessner, Reinhard; Baumann, Thomas

    2015-04-01

    In the light of an increasing number of technical applications using nanoparticles and reports of adverse effects of engineered nanoparticles, research on the occurrence and stability of particles in all compartments has to be intensified. Colloids in river water represent the geologic setting, environmental conditions, and the anthropogenic use in its catchment. The river not only acts as a sink for nanoparticles but also as the source term due to exchange in the hyporheic zone and in bank filtration setups. The concentration, size distribution and elemental composition of particles in the River Inn were studied from the source in the Swiss Alps to the river mouth at Passau from 2008 to 2014. Samples were collected after each tributary from a sub-catchment and filtered on site using a new filtration device for gentle filtration. The elemental composition was determined after acid digestion with ICP/MS. SEM/EDX analysis provided morphological and elemental information for single particles. A complementary chemical analysis of the river water was performed to assess the geochemical stability of individual particles. As presented at EGU 2014, particles in the upper, rural parts mainly reveal changes in the geological setting of the tributary catchments. Not unexpectedly, particles originating from crystalline rocks, were more stable than particles originating from calcareous rocks. Anthropogenic and industrial influences increase in the lower parts. This went together with a change of the size distribution, an increase of the number of organic particles, and a decrease of the microfauna. Interestingly, specific leisure activities in a sub-catchment, like extensive downhill skiing, manifest itself in the particle composition. This general setting was validated in last year's sampling campaigns. An interesting change in on site parameters and hydrochemical composition was seen during all sampling campaigns at an inflow from the valley Kaunertal, Austria. Therefore

  3. Konocti Harbon Inn, Kelseyville, California

    SciTech Connect

    Not Available

    1982-04-01

    Konocti Harbor is a large resort complex, located on the shore of Clear Lake, in Kelseyville, California. A number of buildings on the property, including a 25,000 square foot lodge, 101 motel units and 48 apartment units are heated by the large water-to-water heat pumps, using water from the lake as a heat source. Due to low winter occupancy rates, these machines are run at very low capacity. In addition, a number of buildings are operated on electric resistance and propane backup boilers. This mode of operation results in a relatively high cost compared to the actual heating requirements. Since these systems were originally designed for low temperature water (125/sup 0/F supply 10/sup 0/..delta..t), a low temperature geothermal resource could potentially displace some of the conventional fuel currently used. The potential for geothermal use at the Konocti Harbor Inn is explored.

  4. Defect Doping of InN

    SciTech Connect

    Jones, R.E.; van Genuchten, H.C.M.; Yu, K.M.; Walukiewicz, W.; Li, S.X.; A ger III, J.W.; Liliental-Weber, Z.; Haller, E.E.; Lu, H.; Schaff, W.J.

    2007-07-22

    InN films grown by molecular beam epitaxy have been subjected to 2 MeV He{sup +} irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films with electron mobilities approaching those predicted for uncompensated, singly charged donors. Optimum thermal annealing of irradiated InN can be used to produce samples with electron mobilities higher than those of as grown films.

  5. Colloids in the River Inn

    NASA Astrophysics Data System (ADS)

    Ueckert, Martina; Baumann, Thomas

    2014-05-01

    In the light of an increasing number of technical applications using nanoparticles and reports of adverse effects of engineered nanoparticles, research on the occurrence and stability of particles in all compartments has to be intensified. Colloids in river water represent the geologic setting, environmental conditions, and the anthropogenic use in its catchment. The river not only acts as a sink for nanoparticles but also as the source term due to exchange in the hyporheic zone and in bank filtration setups. The concentration, size distribution and elemental composition of particles in the River Inn were studied from the source in the Swiss Alps to the river mouth at Passau. Samples were collected after each tributary from a sub-catchment and filtered on-site. The elemental composition was determined after acid digestion with ICP/MS. SEM/EDX analyses provided morphological and elemental information for single particles. A complementary chemical analysis of the river water was performed to assess the geochemical stability of indvidual particles. Particles in the upper, rural parts mainly reveal changes in the geological setting of the tributary catchments. Not unexpectedly, particles originating from crystalline rocks, were more stable than particles originating from calcareous rocks. Anthropogenic and industrial influences increase in the lower parts. This went together with a change of the size distribution, an increase of the number of organic particles, and a decrease of the microfauna. Interestingly, specific leisure activities in a sub-catchment, like extensive downhill skiing, manifest itself in the particle composition.

  6. The Children's Inn at NIH turns 25 | NIH MedlinePlus the Magazine

    MedlinePlus

    ... of this page please turn JavaScript on. Feature: The Children's Inn The Children's Inn at NIH turns 25 Past Issues / ... home …" for all families! What to Expect at The Children's Inn The Children's Inn enhances opportunities for ...

  7. Operational rules for the implementation of INN prescribing.

    PubMed

    Van Bever, Elien; Wirtz, Veronika J; Azermai, Majda; De Loof, Geert; Christiaens, Thierry; Nicolas, Luc; Van Bortel, Luc; Vander Stichele, Robert

    2014-01-01

    The aim is to describe the process, principles and results of the International Nonproprietary Name (INN) prescribing project in Belgium. The purpose of this project was to operationalize electronic INN prescribing for outpatient care in daily medical practice and to develop a factual database which can be used in electronic INN prescribing applications. The operationalization process consisted of three phases: (1) expert consultation, (2) review by regulatory authorities and (3) test phase with stakeholders and end-users. The INN prescribing project resulted into (1) operational rules for electronic INN prescribing and (2) a reference database to be implemented in commercial medical software. The operational rules for electronic INN prescribing define valid INN groups as sets of equivalent medicinal products, described by three elements: the therapeutic moiety (the active part of the therapeutic ingredient) or combination of therapeutic moieties, the strength (with standardized denominators), and the method of administration (with simplified but standardized options). The operational rules also define two categories of exemptions for INN prescribing: INN groups where the first choice of treatment should be continued throughout the therapy period (NO SWITCH) and medicinal product groups not suitable for INN prescribing (NO INN). The reference database is the result of the virtual classification of the Belgian therapeutic arsenal into INN groups, according to the operational rules. Defining the operational rules for INN prescribing for and with different stakeholders was a difficult yet feasible assignment. The INN prescribing project resulted into explicit operational rules and a reference database. The Belgian experience may provide important information for other countries planning to operationalize or refine electronic INN prescribing. It can also be used for a thorough evaluation of the impact of the new concept of INN prescribing on daily practice and on

  8. 2. Contextual view southwest from hillside behind Inn, with corner ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    2. Contextual view southwest from hillside behind Inn, with corner of 'Big Sur Inn' Building (HABS-CA-2611-A) at extreme right, State Highway 1 curving through middle ground. - Deetjen's Big Sur Inn, Hayloft Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  9. 3. View to southeast from hillside behind Inn. Roof of ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    3. View to southeast from hillside behind Inn. Roof of 'Big Sur Inn' Building (HABS-CA-2611-A) at lower center, State Highway 1 bridge across Castro Creek Canyon at upper center. - Deetjen's Big Sur Inn, East Side of State Highway 1, Big Sur, Monterey County, CA

  10. 16. LOOKING WEST AT OLD FAITHFUL INN, MOST OF THE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    16. LOOKING WEST AT OLD FAITHFUL INN, MOST OF THE EAST WING IS VISIBLE TO THE LEFT. THE EAST WING ADDITION WAS BUILT BY THE INN'S ORIGINAL ARCHITECT, ROBERT C. REAMER IN 1913-14. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  11. Taming transport in InN

    SciTech Connect

    Ager III, Joel W.; Miller, Nate R.

    2011-05-29

    The large electron affinity of InN, close to 6 eV and the largest of any III-V semiconductor, creates a strong driving force for native donor formation, both in the bulk and at surfaces and interfaces. Moreover, all InN surfaces, regardless of crystal orientation or doping, have been observed to have a surface accumulation layer of electrons, which interferes with standard electrical measurements. For these reasons, until recently, it was uncertain whether or not compensation by donor defects would prevent “real” p-type activity (i.e. existence of sufficiently shallow acceptors and mobile holes). A coordinated experimental approach using a combination of electrical (Hall effect) and electrothermal (Seebeck coefficient) measurements will be described that allows definitive evaluation of carrier transport in InN. In Mg-doped InN films, the sensitivity of thermopower to bulk hole conduction, combined with modeling of the parallel conducting layers (surface/bulk/interface), enables quantitative measurement of the free hole concentration and mobility. In undoped (n-type) material, combined Hall and thermopower measurements, along with a considering of the scattering mechanisms, leads to a quantitative understanding of the crucial role of charged line defects in limiting electron transport.

  12. Rethinking the INN system for therapeutic antibodies

    PubMed Central

    Pottier, Jérémy; Chastang, Romane; Dumet, Christophe; Watier, Hervé

    2017-01-01

    ABSTRACT In the context of a possible revision of the International Nonproprietary Names (INN) system of recombinant monoclonal antibodies, which is saturated, we propose several avenues of reflection driven by the primary goal of the INN, information of health-care professionals. Clinical considerations argue for an abandon of the substems A (target category) and B (origin category), which lengthen the INN without real added-value. On the contrary, new substems or suffixes are required to alert on the absence/presence of an Fc portion and/or multispecificity, which are essential from a pharmacological point of view. Moreover, we think it necessary to explicitly mention Fc variations since they could influence the pharmacology of these biopharmaceuticals, and hence their efficacy and side-effects. Besides indicating the subclass/isotype in the documents easily accessible to health care professionals, we propose to systematically describe both the natural variations (allotypes) by using the Gm (G marker) system, and the artificial variations by using a Ge (G engineering) system that is discussed here and could apply to all IgG constant domains (tentatively called the Fy portion). PMID:27808597

  13. Mg doped InN and confirmation of free holes in InN

    SciTech Connect

    Wang, K.; Yamaguchi, T.; Miller, N.; Mayer, M. A.; Haller, E. E.; Iwamoto, R.; Araki, T.; Nanishi, Y.; Yu, K. M.; Walukiewicz, W.; Ager, J. W. III

    2011-01-24

    We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type 'window' the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted.

  14. 1. View north from across State Highway 1 toward Inn. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. View north from across State Highway 1 toward Inn. 'Big Sur Inn' Building (HABS-CA-2611-A) visible at left, 'Hayloft' Building (HABS-CA-2611-B at right center, and 'Antique' Building (HABS-CA-2611-C) and 'Champagne' Building (HABS-CA-2611-D) out of sight behind trees at right. - Deetjen's Big Sur Inn, East Side of State Highway 1, Big Sur, Monterey County, CA

  15. Investigation of gas sensing properties of InN nanoparticles

    SciTech Connect

    Madapu, Kishore K. E-mail: dhara@igcar.gov.in; Prasad, A. K.; Tyagi, A. K.; Dhara, S. E-mail: dhara@igcar.gov.in

    2015-06-24

    InN nanoparticles were grown by chemical vapor deposition technique using In{sub 2}O{sub 3} as precursor material. Raman spectroscopic studies show the presence of the wurtzite phase of as-grown InN. Size of the nanoparticles were in range from quantum dot (<8 nm) to larger sized particles (100 nm). We studied the gas sensing properties of InN nanoparticles with CH{sub 4} gas. Sensors substrates were fabricated with interdigitated Au electrodes. InN nanoparticles show high response towards CH{sub 4} with minimum detectable concentration of 50 ppm at 200 °C.

  16. The Children's Inn at NIH Anniversary Key Messages | NIH MedlinePlus the Magazine

    MedlinePlus

    ... of this page please turn JavaScript on. Feature: The Children's Inn The Children's Inn at NIH Past Issues / Summer 2014 ... Contents Anniversary Key Messages Playground and Park at The Children's Inn at NIH. Photo courtesy of Mahan ...

  17. 21. REAR OF OLD FAITHFUL INN, LOOKING NORTH. SEMICIRCULAR SIDE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    21. REAR OF OLD FAITHFUL INN, LOOKING NORTH. SEMI-CIRCULAR SIDE DINING ROOM, NOW CALLED THE BEAR PIT WAS ADDED IN 1927. (TAKEN FROM CHERRY-PICKER) - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  18. Solar Hot Water for Motor Inn--Texas City, Texas

    NASA Technical Reports Server (NTRS)

    1982-01-01

    Final report describes solar domestic-hot-water heater installation at LaQuinta Motor Inn, Texas City, Texas which furnished 63% of total hot-water load of new 98-unit inn. Report presents a description of system, drawings and photographs of collectors, operations and maintenance instructions, manufacturers' specifications for pumps, and an engineer's report on performance.

  19. 17. HIGHWAY 190 ROAD VIEW AT FURNACE CREEK INN. NOTE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. HIGHWAY 190 ROAD VIEW AT FURNACE CREEK INN. NOTE ABANDONED GAS STATION ON LEFT AND ROAD TO BADWATER AT LEFT IN BACKGROUND. LOOKING WSW. - Death Valley National Park Roads, Death Valley Junction, Inyo County, CA

  20. Optical properties of InN studied by spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Chunya, Ye; Wei, Lin; Jin, Zhou; Shuping, Li; Li, Chen; Heng, Li; Xiaoxuan, Wu; Songqing, Liu; Junyong, Kang

    2016-10-01

    With recently developed InN epitaxy via a controlling In bilayer, spectroscopic ellipsometry (SE) measurements had been carried out on the grown InN and the measured ellipsometric spectra were fitted with the Delta Psi2 software by using a suitable model and the dispersion rule. The thickness was measured by a scanning electron microscope (SEM). Insight into the film quality of InN and the lattice constant were gained by X-ray diffraction (XRD). By fitting the SE, the thickness of the InN film is consistent with that obtained by SEM cross-sectional thickness measurement. The optical bandgap of InN was put forward to be 1.05 eV, which conforms to the experimental results measured by the absorption spectrum and cathodoluminescence (CL). The refractive index and the extinction coefficient of interest were represented for InN, which is useful to design optoelectronic devices. Project supported by the State Key Development Program for Basic Research of China (No. 2012CB619301), the National High Technology Research and Development Program of China (No. 2014AA032608), the National Natural Science Foundation of China (Nos. 11204254, 11404271), and the Fundamental Research Funds for the Central Universities (Nos. 2012121014, 20720150027).

  1. The INNs and outs of antibody nonproprietary names.

    PubMed

    Jones, Tim D; Carter, Paul J; Plückthun, Andreas; Vásquez, Max; Holgate, Robert G E; Hötzel, Isidro; Popplewell, Andrew G; Parren, Paul W H I; Enzelberger, Markus; Rademaker, Hendrik J; Clark, Michael R; Lowe, David C; Dahiyat, Bassil I; Smith, Victoria; Lambert, John M; Wu, Herren; Reilly, Mary; Haurum, John S; Dübel, Stefan; Huston, James S; Schirrmann, Thomas; Janssen, Richard A J; Steegmaier, Martin; Gross, Jane A; Bradbury, Andrew R M; Burton, Dennis R; Dimitrov, Dimiter S; Chester, Kerry A; Glennie, Martin J; Davies, Julian; Walker, Adam; Martin, Steve; McCafferty, John; Baker, Matthew P

    2016-01-01

    An important step in drug development is the assignment of an International Nonproprietary Name (INN) by the World Health Organization (WHO) that provides healthcare professionals with a unique and universally available designated name to identify each pharmaceutical substance. Monoclonal antibody INNs comprise a -mab suffix preceded by a substem indicating the antibody type, e.g., chimeric (-xi-), humanized (-zu-), or human (-u-). The WHO publishes INN definitions that specify how new monoclonal antibody therapeutics are categorized and adapts the definitions to new technologies. However, rapid progress in antibody technologies has blurred the boundaries between existing antibody categories and created a burgeoning array of new antibody formats. Thus, revising the INN system for antibodies is akin to aiming for a rapidly moving target. The WHO recently revised INN definitions for antibodies now to be based on amino acid sequence identity. These new definitions, however, are critically flawed as they are ambiguous and go against decades of scientific literature. A key concern is the imposition of an arbitrary threshold for identity against human germline antibody variable region sequences. This leads to inconsistent classification of somatically mutated human antibodies, humanized antibodies as well as antibodies derived from semi-synthetic/synthetic libraries and transgenic animals. Such sequence-based classification implies clear functional distinction between categories (e.g., immunogenicity). However, there is no scientific evidence to support this. Dialog between the WHO INN Expert Group and key stakeholders is needed to develop a new INN system for antibodies and to avoid confusion and miscommunication between researchers and clinicians prescribing antibodies.

  2. The INNs and outs of antibody nonproprietary names

    PubMed Central

    Jones, Tim D.; Carter, Paul J.; Plückthun, Andreas; Vásquez, Max; Holgate, Robert G.E.; Hötzel, Isidro; Popplewell, Andrew G.; Parren, Paul W.H.I.; Enzelberger, Markus; Rademaker, Hendrik J.; Clark, Michael R.; Lowe, David C.; Dahiyat, Bassil I.; Smith, Victoria; Lambert, John M.; Wu, Herren; Reilly, Mary; Haurum, John S.; Dübel, Stefan; Huston, James S.; Schirrmann, Thomas; Janssen, Richard A.J.; Steegmaier, Martin; Gross, Jane A.; Bradbury, Andrew R.M.; Burton, Dennis R.; Dimitrov, Dimiter S.; Chester, Kerry A.; Glennie, Martin J.; Davies, Julian; Walker, Adam; Martin, Steve; McCafferty, John; Baker, Matthew P.

    2016-01-01

    An important step in drug development is the assignment of an International Nonproprietary Name (INN) by the World Health Organization (WHO) that provides healthcare professionals with a unique and universally available designated name to identify each pharmaceutical substance. Monoclonal antibody INNs comprise a –mab suffix preceded by a substem indicating the antibody type, e.g., chimeric (-xi-), humanized (-zu-), or human (-u-). The WHO publishes INN definitions that specify how new monoclonal antibody therapeutics are categorized and adapts the definitions to new technologies. However, rapid progress in antibody technologies has blurred the boundaries between existing antibody categories and created a burgeoning array of new antibody formats. Thus, revising the INN system for antibodies is akin to aiming for a rapidly moving target. The WHO recently revised INN definitions for antibodies now to be based on amino acid sequence identity. These new definitions, however, are critically flawed as they are ambiguous and go against decades of scientific literature. A key concern is the imposition of an arbitrary threshold for identity against human germline antibody variable region sequences. This leads to inconsistent classification of somatically mutated human antibodies, humanized antibodies as well as antibodies derived from semi-synthetic/synthetic libraries and transgenic animals. Such sequence-based classification implies clear functional distinction between categories (e.g., immunogenicity). However, there is no scientific evidence to support this. Dialog between the WHO INN Expert Group and key stakeholders is needed to develop a new INN system for antibodies and to avoid confusion and miscommunication between researchers and clinicians prescribing antibodies. PMID:26716992

  3. InN Quantum Dot Based Infra-Red Photodetectors.

    PubMed

    Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

    2016-01-01

    Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

  4. The Children's Inn at NIH - Three Stories | NIH MedlinePlus the Magazine

    MedlinePlus

    ... of this page please turn JavaScript on. Feature: The Children's Inn The Children's Inn at NIH - Three Stories Past Issues / Summer 2014 Table of Contents Kristal Nemeroff—The Patient Kristal Nemeroff, age 2, at the Children's ...

  5. Solar Hot Water for a Motor Inn -- Las Vegas, Nevada

    NASA Technical Reports Server (NTRS)

    1982-01-01

    Solar hot-water installation at motor inn in Las Vegas, Nevada is described in report containing descriptions of design, philosophy, operation of system and problems and solutions. Provides drawings of solar roof plan, operator's instructions, manufacturers' brochures and copy of acceptance report.

  6. No Vacancy: Inn Provides Revenue Source for Financially Troubled Institute.

    ERIC Educational Resources Information Center

    Bridges, Jerry G.; Brant, Joseph F.

    1994-01-01

    The Peabody Institute of Baltimore (Maryland), the Johns Hopkins University's music school, addressed its financial problems by converting four campus buildings into an inn used to house Elderhostel participants. Annual program revenues cover all costs and yield a financial reserve for the school. (MSE)

  7. Phonon lifetimes and phonon decay in InN

    NASA Astrophysics Data System (ADS)

    Pomeroy, J. W.; Kuball, M.; Lu, H.; Schaff, W. J.; Wang, X.; Yoshikawa, A.

    2005-05-01

    We report on the Raman analysis of A1(LO) (longitudinal optical) and E2 phonon lifetimes in InN and their temperature dependence from 80 to 700 K. Our experimental results show that among the various possible decay channels, the A1(LO) phonon decays asymmetrically into a high energy and a low energy phonon, whereas the E2 phonon predominantly decays into three phonons. Possible decay channels of the A1(LO) phonon may involve combinations of transverse optical and acoustic phonons. Phonon lifetimes of 1.3 and 4 ps were measured at 80 K for the A1(LO) and the E2 phonons, respectively. This rather long A1(LO) phonon lifetime suggests that hot phonon effects will play a role in InN for carrier relaxation.

  8. Temperature switching of cavity modes in InN microcrystals

    SciTech Connect

    Kazanov, D. R. Kaibyshev, V. H.; Davydov, V. Yu.; Smirnov, A. N.; Jmerik, V. N.; Kuznetsova, N. V.; Kopiev, P. S.; Ivanov, S. V.; Shubina, T. V.

    2015-11-15

    InN optical cavities supporting low-order whispering-gallery modes up to room temperature are formed by molecular-beam epitaxy on patterned substrates. The observed switching of the mode type with increasing temperature is explained in terms of changes in the optical parameters due to a shift of the absorption edge and modification of its shape. Modeling taking into account a variation in the refractive index reproduces the typical distributions of the electromagnetic-field intensity in the cavities.

  9. Lattice polarity detection of InN by circular photogalvanic effect

    SciTech Connect

    Zhang, Q.; Wang, X. Q.; He, X. W.; Yin, C. M.; Xu, F. J.; Shen, B.; Chen, Y. H.; Wang, Z. G.; Ishitani, Y.; Yoshikawa, A.

    2009-07-20

    We report an effective and nondestructive method based on circular photogalvanic effect (CPGE) to detect the lattice polarity of InN. Because of the lattice inversion between In- and N-polar InN, the energy band spin splitting is opposite for InN films with different polarities. Consequently under light irradiation with the same helicity, CPGE photocurrents in In- and N-polar layers will have opposite directions, thus the polarity can be detected. This method is demonstrated by our CPGE measurements in both n- and p-type InN films.

  10. Lattice polarity detection of InN by circular photogalvanic effect

    NASA Astrophysics Data System (ADS)

    Zhang, Q.; Wang, X. Q.; He, X. W.; Yin, C. M.; Xu, F. J.; Shen, B.; Chen, Y. H.; Wang, Z. G.; Ishitani, Y.; Yoshikawa, A.

    2009-07-01

    We report an effective and nondestructive method based on circular photogalvanic effect (CPGE) to detect the lattice polarity of InN. Because of the lattice inversion between In- and N-polar InN, the energy band spin splitting is opposite for InN films with different polarities. Consequently under light irradiation with the same helicity, CPGE photocurrents in In- and N-polar layers will have opposite directions, thus the polarity can be detected. This method is demonstrated by our CPGE measurements in both n- and p-type InN films.

  11. Prediction of rock salt structure of (InN)32 nanoparticles from first principles calculations.

    PubMed

    Kaur, Prabhsharan; Sekhon, S S; Kumar, Vijay

    2013-03-21

    From first principles calculations, we show that (InN)32 nanoparticles favor rock salt structure compared with wurtzite structure in bulk. A phase transition from wurtzite to rock salt structure is known to occur in bulk InN at 12.1 GPa and higher values of pressure for AlN and GaN. However, at the nanoscale we show that this structural transition takes place in (InN)32 without applying pressure. The charge asymmetry value "g" and cation/anion size ratio in InN describe very well this behavior. Similar studies on nanoparticles of AlN and GaN as well as a few other binary compounds such as MgS, AgI, ZnO, and CdSe, however, do not show such a transition. Our results suggest (InN)32 to be a unique candidate as further calculations on a few larger size (InN)n nanoparticles show that a filled cage (two shells) (InN)12@(InN)48 structure of (InN)60 has higher binding energy compared with a rock salt structure of (InN)64 leading to the conclusion that other 3D structures are likely to become favorable over rock salt structure for larger sizes.

  12. Convergence of valence bands for high thermoelectric performance for p-type InN

    NASA Astrophysics Data System (ADS)

    Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

    2015-12-01

    Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of ZeT is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

  13. Applying the INN model to the MaxClique problem

    SciTech Connect

    Grossman, T.

    1993-09-01

    Max-Clique is the problem of finding the largest clique in a given graph. It is not only NP-hard, but, as recent results suggest, even hard to approximate. Nevertheless it is still very important to develop and test practical algorithms that will find approximate solutions for the maximum clique problem on various graphs stemming from numerous applications. Indeed, many different types of algorithmic approaches are applied to that problem. Several neural networks and related algorithms were applied recently to combinatorial optimization problems in general and to the Max-Clique problem in particular. These neural nets are dynamical system which minimize a cost (or computational ``energy``) function that represents the optimization problem, the Max-Clique in our case. Therefore they all belong to the class of integer programming algorithms surveyed in the Pardalos and Xue review. The work presented here is a development and improvement of a neural network algorithm that was introduced recently. In the previous work, we have considered two Hopfield type neural networks, the INN and the HcN, and their application to the max-clique problem. In this paper, I concentrate on the INN network and present an improved version of the t-A algorithm that was introduced in. The rest of this paper is organized as follows: in section 2, I describe the INN model and how it implements a given graph. In section 3, it is characterized in terms of graph theory. In particular, the stable states of the network are mapped to the maximal cliques of its underling graph. In section 4, I present the t-Annealing algorithm and an improved version of it, the Adaptive t-Annealing. Several experiments done with these algorithms on benchmark graphs are reported in section 5, and the efficiency of the new algorithm is demonstrated. I conclude with a short discussion.

  14. Transmission Electron Microscopy Study of InN Nanorods

    SciTech Connect

    Liliental-Weber, Z.; Li, X.; Kryliouk, Olga; Park, H.J.; Mangum,J.; Anderson, T.

    2006-07-13

    InN nanorods were grown on a, c-, and r-plane of sapphire and also on Si (111) and GaN (0001) by non-catalytic, template-free hydride metal-organic vapor phase epitaxy and studied by transmission electron microscopy, electron energy loss (EELS) and photoluminescence (PL) at room temperature. These nanocrystals have different shapes and different faceting depending on the substrate used and their crystallographic orientation. EELS measurements have confirmed the high purity of these crystals. The observed PL peak was in the range of 0.9-0.95 eV. The strongest PL intensity was observed for the nanocrystals with the larger diameters.

  15. Temperature sensitive photoconductivity observed in InN layers

    NASA Astrophysics Data System (ADS)

    Guo, Lei; Wang, Xinqiang; Feng, Li; Zheng, Xiantong; Chen, Guang; Yang, Xuelin; Xu, Fujun; Tang, Ning; Lu, Liwu; Ge, Weikun; Shen, Bo

    2013-02-01

    Photoconductivity has been systematically studied in unintentionally doped n-type InN film with super-bandgap excitation (1.53 eV) at temperatures varying in the range of 100-300 K. A negative photoconductivity is observed at room temperature, whereas it gradually changes to be positive with decreasing temperature. Transition temperature from negative to positive photoconductivity is found to be greatly related to the residual electron concentration as the higher the electron concentration, the lower the transition temperature. An energy band model including a donor state with large lattice relaxation as well as a recombination center is proposed, which explains the experimental observation well.

  16. The Little Inn at the Crossroads: A Spiritual Approach to the Design of a Leadership Course.

    ERIC Educational Resources Information Center

    Bento, Regina F.

    2000-01-01

    A course on spiritual dimensions of leadership was designed using the metaphor of an inn at a crossroads. The inn included a virtual library of Web-based texts and studio space for creativity and self-expression. Seven workshops explored the following themes: language of leadership and change, personal leadership qualities, vision and mission,…

  17. Electronic structures and work functions of InN(0001) films

    NASA Astrophysics Data System (ADS)

    Song, Jung-Hwan; Freeman, Arthur J.

    2007-03-01

    InN films have attracted great attention with its recently discovered band gap, 0.7eV, and evidence for p-type doping. We have studied theoretically the electronic structures, surfaces, and work functions of InN films using the highly precise FLAPW method. The passivation with pseudo-hydrogens has also been applied to the surfaces of InN(0001) films for comparison with the electronic structure of the ideal InN(0001) films. We compare the work functions of InN films with other wurtzite materials such as ZnO, GaN, and AlN, which we have also calculated. We discuss the mechanism of the structural transition with layer thickness for the very thin InN(0001) films, for which we have found that the ideal InN(0001) films of the wurtzite structure, up to 4 bilayers, optimize to the graphitic- like structure. We then discuss the relationship between the dipoles and the surfaces (work functions) of the InN(0001) films, and the possibilities of their p-type doping. R.E. Jones, et al, Phys. Rev. Lett, 96, 125505 (2006). Wimmer, Krakauer, Weinert, Freeman, Phys. Rev. B, 24, 864 (1981). K. Shiraishi, J. Phys. Soc. Jpn, 59, 3455 (1990) C. L. Freeman, et al, Phys. Rev. Lett, 96, 066102 (2006)

  18. NIH's "Family Inn" Lets Out-of-Town Youngsters Stay "Home."

    ERIC Educational Resources Information Center

    Somerville, Sylvia

    1993-01-01

    The Children's Inn, on the grounds of the National Institutes for Health (NIH) near Washington, DC, serves as a national model of the value of family-centered homes for pediatric patients and their families. When parents bring their child to NIH from a distant place, they can stay in the inn with their child while the child is receiving treatment.…

  19. Inn1 couples contraction of the actomyosin ring to membrane ingression during cytokinesis in budding yeast.

    PubMed

    Sanchez-Diaz, Alberto; Marchesi, Vanessa; Murray, Stephen; Jones, Richard; Pereira, Gislene; Edmondson, Ricky; Allen, Terry; Labib, Karim

    2008-04-01

    By rapidly depleting each of the essential budding yeast proteins of unknown function, we identified a novel factor that we call Inn1, which associates with the contractile actomyosin ring at the end of mitosis and is needed for cytokinesis. We show that Inn1 has a C2 domain at the amino terminus of the protein that is required for ingression of the plasma membrane, whereas the remainder of the protein recruits Inn1 to the actomyosin ring. The lethal effects of deleting the INN1 gene can be suppressed by artificial fusion of the C2 domain to other components of the actomyosin ring, restoring membrane ingression on contraction of the actomyosin ring. Our data indicate that recruitment of the C2 domain of Inn1 to the contractile actomyosin ring is crucial for ingression of the plasma membrane during cytokinesis in budding yeast.

  20. Direct current magnetron sputtering deposition of InN thin films

    NASA Astrophysics Data System (ADS)

    Cai, Xing-Min; Hao, Yan-Qing; Zhang, Dong-Ping; Fan, Ping

    2009-10-01

    In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

  1. Geothermal heating facilities for Frontier Inn, Susanville, California

    NASA Astrophysics Data System (ADS)

    1982-03-01

    A 38 unit motel composed of six major sections (coffee shop, A frame units, apartments, back units, two story units and office) was built over a number of years and exhibits widely varying types of construction. Space heating is provided by primarily electric resistance equipment with some propane use. Domestic hot water is provided primarily by propane with some electric resistance. The coffee shop uses fuel oil for both space and domestic hot water heating. A geothermal district heating system is being installed. Although the motel site is not located in the area of construction activity, it is expected that the pipeline will be extended. The potential of retrofitting the existing heating facilities at the inn to geothermal is studied.

  2. Molecular beam epitaxy of InN dots on nitrided sapphire

    SciTech Connect

    Romanyuk, Yaroslav E.; Dengel, Radu-Gabriel; Stebounova, LarissaV.; Leone, Stephen R.

    2007-04-20

    A series of self-assembled InN dots are grown by radio frequency (RF) plasma-assisted molecular beam epitaxy (MBE) directly on nitrided sapphire. Initial nitridation of the sapphire substrates at 900 C results in the formation of a rough AlN surface layer, which acts as a very thin buffer layer and facilitates the nucleation of the InN dots according to the Stranski-Krastanow growth mode, with a wetting layer of {approx}0.9 nm. Atomic force microscopy (AFM) reveals that well-confined InN nanoislands with the greatest height/width at half-height ratio of 0.64 can be grown at 460 C. Lower substrate temperatures result in a reduced aspect ratio due to a lower diffusion rate of the In adatoms, whereas the thermal decomposition of InN truncates the growth at T>500 C. The densities of separated dots vary between 1.0 x 10{sup 10} cm{sup -2} and 2.5 x 10{sup 10} cm{sup -2} depending on the growth time. Optical response of the InN dots under laser excitation is studied with apertureless near-field scanning optical microscopy and photoluminescence spectroscopy, although no photoluminescence is observed from these samples. In view of the desirable implementation of InN nanostructures into photonic devices, the results indicate that nitrided sapphire is a suitable substrate for growing self-assembled InN nanodots.

  3. Intrinsic electronic properties of high-quality wurtzite InN

    NASA Astrophysics Data System (ADS)

    Eisele, H.; Schuppang, J.; Schnedler, M.; Duchamp, M.; Nenstiel, C.; Portz, V.; Kure, T.; Bügler, M.; Lenz, A.; Dähne, M.; Hoffmann, A.; Gwo, S.; Choi, S.; Speck, J. S.; Dunin-Borkowski, R. E.; Ebert, Ph.

    2016-12-01

    Recent reports suggested that InN is a highly unusual III-V semiconductor, whose behavior fundamentally differs from that of others. We therefore analyzed its intrinsic electronic properties on the highest available quality InN layers, demonstrating the absence of electron accumulation at the (10 1 ¯0 ) cleavage surface and in the bulk. The bulk electron density is governed solely by dopants. Hence, we conclude that InN acts similarly to the other III-V semiconductors and previously reported intriguing effects are related to low crystallinity, surface decomposition, nonstoichiometry, and/or In adlayers.

  4. Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates

    NASA Astrophysics Data System (ADS)

    Wang, Xiao; Zhang, Guozhen; Xu, Yang; Wu, Hao; Liu, Chang

    2017-02-01

    InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolumns were transferred onto p-type silicon substrates after etching off the AAO templates. Current-voltage characteristic of the transferred n-InN/p-Si heterojunctions shows on/off ratio as high as 4.65 × 103 at 2 V. This work offers a potential way to grow transferable devices with improving performances.

  5. Two-dimensional electron gas in monolayer InN quantum wells

    SciTech Connect

    Pan, W. E-mail: e.dimakis@hzdr.de; Wang, G. T.; Dimakis, E. E-mail: e.dimakis@hzdr.de; Moustakas, T. D.; Tsui, D. C.

    2014-11-24

    We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10{sup 15 }cm{sup −2} (or 1.25 × 10{sup 14 }cm{sup −2} per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm{sup 2}/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

  6. Boron doped GaN and InN: Potential candidates for spintronics

    NASA Astrophysics Data System (ADS)

    Fan, S. W.; Huang, X. N.; Yao, K. L.

    2017-02-01

    The full potential linearized augmented plane wave method together with the Tran-Blaha modified Becke-Johnson potential is utilized to investigate the electronic structures and magnetism for boron doped GaN and InN. Calculations show the boron substituting nitrogen (BN defects) could induce the GaN and InN to be half-metallic ferromagnets. The magnetic moments mainly come from the BN defects, and each BN defect would produce the 2.00 μB total magnetic moment. The electronic structures indicate the carriers-mediated double exchange interaction plays a crucial role in forming the ferromagnetism. Positive chemical pair interactions imply the BN defects would form the homogeneous distribution in GaN and InN matrix. Moderate formation energies suggest that GaN and InN with BN defects could be fabricated experimentally.

  7. InN Based Water Condensation Sensors on Glass and Flexible Plastic Substrates

    PubMed Central

    Dumitru, Viorel; Costea, Stefan; Brezeanu, Mihai; Stan, George E.; Besleaga, Cristina; Galca, Aurelian C.; Ionescu, Gabriela; Ionescu, Octavian

    2013-01-01

    In this paper, we report the realization and characterization of a condensation sensor based on indium nitride (InN) layers deposited by magnetron sputtering on glass and flexible plastic substrates, having fast response and using potentially low cost fabrication technology. The InN devices work as open gate thin film sensitive transistors. Condensed water droplets, formed on the open gate region of the sensors, deplete the electron accumulation layer on the surface of InN film, thus decreasing the current of the sensor. The current increases back to its initial value when water droplets evaporate from the exposed InN film surface. The response time is as low as 2 s.

  8. Ambient pressure, low-temperature synthesis and characterization of colloidal InN nanocrystals

    PubMed Central

    Hsieh, Jennifer C.; Yun, Dong Soo; Hu, Evelyn

    2014-01-01

    Highly soluble, non-aggregated colloidal wurtzite InN nanocrystals were obtained through an ambient pressure, low-temperature method followed by post-synthesis treatment with nitric acid. PMID:25484524

  9. An investigation of electronic and optical properties of InN nanosheet by first principle study

    NASA Astrophysics Data System (ADS)

    Farzan, M.; Elahi, S. M.; Salehi, H.; Abolhassani, M. R.

    2017-07-01

    In this work, we investigated electronic and optical properties of InN nanosheet using density function theory (DFT) implemented in Wien2k code. We calculated the dielectric function, absorption coefficient, optical conductivity, refraction index, extinction index, reflectivity, and energy loss function of the InN nanosheet within GGA (PBE) and Engel-Vosko (E.V) approximation in two directions E||x (electric field parallel to nanosheet) and E||z (electric field perpendicular to nanosheet), we also calculated the band gap energy within GGA (PBE) and E.V approximations. Optical conductivity in directions to x and z shows that InN nanosheet has semiconductor properties. At the end, we calculated electronic and optical properties, and elastic constant of InN Bulk (wurtzite).

  10. Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy

    SciTech Connect

    Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E.; Luna, E.; Trampert, A.

    2007-07-09

    High quality InN nanocolumns have been grown by molecular beam epitaxy on bare and AlN-buffered Si(111) substrates. The accommodation mechanism of the InN nanocolumns to the substrate was studied by transmission electron microscopy. Samples grown on AlN-buffered Si(111) show abrupt interfaces between the nanocolumns and the buffer layer, where an array of periodically spaced misfit dislocations develops. Samples grown on bare Si(111) exhibit a thin Si{sub x}N{sub y} at the InN nanocolumn/substrate interface because of Si nitridation. The Si{sub x}N{sub y} thickness and roughness may affect the nanocolumn relative alignment to the substrate. In all cases, InN nanocolumns grow strain- and defect-free.

  11. Polarity and microstructure in InN thin layers grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Kuwano, N.; Nakahara, Y.; Amano, H.

    2006-06-01

    Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed

  12. Synthesis and characterization of InP and InN colloidal quantum dots.

    SciTech Connect

    Boyle, Timothy J.; Osinski, Marek; Greenberg, Melisa; Bunge, Scott D.; Chen, Weiliang; Smolyakov, G. A.; Pulford, B. N.; Jiang, Ying-Bing

    2005-04-01

    InP quantum dots (QDs) with zinc blende structure and InN QDs with hexagonal structure were synthesized from appropriate organometallic precursors in a noncoordinating solvent using myristic acid as a ligand. The QDs were characterized by TEM, the associated energy dispersive spectroscopy (EDS), electron diffraction, and steady state UV-VIS optical absorption and photoluminescence spectroscopy. To our best knowledge, this paper reports synthesis of InN colloidal quantum dots for the first time.

  13. Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth

    SciTech Connect

    Kamimura, J.; Kishino, K.; Kikuchi, A.

    2015-02-28

    Very thick InN (∼40 μm) was grown by molecular beam epitaxy using the epitaxial lateral overgrowth (ELO) technique. In some regions, the ELO of InN was observed as expected, indicating an important step toward fabricating quasi-bulk InN substrates. Interestingly, most parts of the sample consist of large flat-topped microcrystals and well-faceted microstructures. This is likely due to local growth condition variations during ELO, which is supported by an experiment where ELO of InN was performed on a substrate with various stripe mask patterns. TEM characterization of a flat top InN microcrystal revealed few stacking faults and only related threading dislocations. Defect-free small faceted microcrystals were also observed. The thick InN crystals show a narrow photoluminescence spectrum with a peak at 0.679 eV and linewidth of 16.8 meV at 4 K.

  14. First-principles study of optical properties of InN nanosheet

    NASA Astrophysics Data System (ADS)

    Sarmazdeh, Masoud Majidiyan; Mendi, Roohallah Taghavi; Zelati, Amir; Boochani, Arash; Nofeli, Fariba

    2016-05-01

    Based on density functional theory (DFT), some optical properties of InN nanosheet, such as dielectric function, energy loss function, refractive index, reflectivity and absorption coefficient, have been calculated using the modified Becke-Johnson (mBJ) exchange-correlation potential and full potential-linearized augmented plane waves (FP-LAPW) method. The study of dielectric function show that optical properties of InN nanosheet are anisotropic and important energy range in the optical process is between low energies to 20 eV. The results indicate the plasmon energy of InN nanosheet occurs in the lower energy than bulk InN and in addition the plasmon energy in the in-plane direction is different from that perpendicular to the in-plane direction. The obtained optical gaps are 1.2 eV and 3.6 eV in perpendicular and parallel to c-axis, respectively. Study of refractive index and optical reflectivity shows that the superluminal phenomena occur in the several energy ranges for the InN nanosheet and this nanosheet has high transparency in a wide energy range. The results propose that the InN nanosheet is a good candidate for the optical communications applications, optoelectronics devices and transparent coatings.

  15. Synthesis and characterization of InN nanocrystals on glass substrate by plasma assisted reactive evaporation

    NASA Astrophysics Data System (ADS)

    Ganesh, V.; Alizadeh, M.; Shuhaimi, A.; Sundaram, S.; Hakim, K. M.; Goh, B. T.; Rahman, S. A.

    2017-07-01

    InN nanocrystals were grown on glass substrate by plasma assisted reactive evaporation technique and the quality was compared with InN on Si (111) substrate. Single phase InN was confirmed by X-ray diffraction and micro Raman analysis on both the substrates. Agglomerated and Hexagonal faceting nanocrystals observed by field emission scanning electron microscopy. Energy dispersive X-ray analysis shows InN nanocrystals are nearly stochiometric. Photoluminescence reveals a broad emission near bandedge at 2 .04 eV and defect band at 1.07 eV. The Hall measurement on both the substrates reveals high electron carrier concentration. These encouraging results obtained suggested that high quality single crystalline InN can be obtained on glass substrate further optimizing the growth parameters. This novel growth of InN nanocrystals on glass substrate is an important step towards the development of monolithic, high efficiency low-cost InGaN-based renewable energy sources.

  16. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

    NASA Astrophysics Data System (ADS)

    Nanishi, Yasushi; Saito, Yoshiki; Yamaguchi, Tomohiro

    2003-05-01

    The fundamental band gap of InN has been thought to be about 1.9 eV for a long time. Recent developments of metalorganic vapor phase epitaxy (MOVPE) and RF-molecular beam epitaxy (RF-MBE) growth technologies have made it possible to obtain high-quality InN films. A lot of experimental results have been presented very recently, suggesting that the true band-gap energy of InN should be less than 1.0 eV. In this paper, we review the results of the detailed study of RF-MBE growth conditions for obtaining high-quality InN films. The full widths at half maximum (FWHMs) of ω-mode X-ray diffraction (XRD), ω-2θ mode XRD and E2 (high-frequency)-phonon-mode peaks in the Raman scattering spectrum of the grown layer were 236.7 arcsec, 28.9 arcsec and 3.7 cm-1, respectively. The carrier concentration and room temperature electron mobility were 4.9× 1018 cm-3 and 1130 cm2/Vs, respectively. Photoluminescence and optical absorption measurements of these high-quality InN films have clearly demonstrated that the fundamental band gap of InN is about 0.8 eV. Studies on the growth and characterization of InGaN alloys over the entire alloy composition further supported that the fundamental band gap of InN is about 0.8 eV.

  17. The electronic structures of AlN and InN wurtzite nanowires

    NASA Astrophysics Data System (ADS)

    Xiong, Wen; Li, Dong-Xiao

    2017-07-01

    We derive the relations between the analogous seven Luttinger-Kohn parameters and six Rashba-Sheka-Pikus parameters for wurtzite semiconductors, which can be used to investigate the electronic structures of some wurtzite semiconductors such as AlN and InN materials, including their low-dimensional structures. As an example, the electronic structures of AlN and InN nanowires are calculated by using the derived relations and six-band effective-mass k · p theory. Interestingly, it is found that the ground hole state of AlN nanowires is always a pure S state whether the radius R is small (1 nm) or large (6 nm), and the ground hole state only contains | Z > Bloch orbital component. Therefore, AlN nanowires is the ideal low-dimensional material for the production of purely linearly polarized π light, unlike ZnO nanowires, which emits plane-polarized σ light. However, the ground hole state of InN nanowires can be tuned from a pure S state to a mixed P state when the radius R is larger than 2.6 nm, which will make the polarized properties of the lowest optical transition changes from linearly polarized π light to plane-polarized σ light. Meanwhile, the valence band structures of InN nanowires will present strong band-crossings when the radius R increases to 6 nm, and through the detail analysis of possible transitions of InN nanowires at the Γ point, we find some of the neighbor optical transitions are almost degenerate, because the spin-orbit splitting energy of InN material is only 0.001 eV. Therefore, it is concluded that the electronic structures and optical properties of InN nanowires present great differences with that of AlN nanowires.

  18. Relation Between Structural and Optical Properties of InN and InxGa1-xN Thin Films

    DTIC Science & Technology

    2009-01-01

    Keywords: InN InGaN structural and optical properties Abstract: <p>Transmission Electron Microscopy (TEM) and optical measurements obtained from InN and...In1-xGaxNfilms (0 < x < 0.54) grown by Molecular Beam Epitaxy are presented. Energy gaps measured byabsorption, PR, and PL for InN films grown on c...and optical measurements obtained from InN and In1-xGaxN films (0 < x < 0.54) grown by Molecular Beam Epitaxy are presented. Energy gaps measured by

  19. Raman scattering study of anharmonic phonon decay in InN

    NASA Astrophysics Data System (ADS)

    Domènech-Amador, Núria; Cuscó, Ramon; Artús, Luis; Yamaguchi, Tomohiro; Nanishi, Yasushi

    2011-06-01

    We present Raman scattering measurements on wurtzite InN over a temperature range from 80 to 660 K. To investigate all phonon modes of the wurtzite structure, measurements were performed on c and m faces of high-quality InN epilayers. High-resolution measurements of the low-frequency E2 mode reveal a slight anharmonic broadening of such a long-lived phonon due to up-conversion processes and a substantial contribution of background impurity broadening in the determination of its linewidth. An analysis of the anharmonicity and lifetimes of the InN phonons is carried out. Possible decay channels including up-conversion processes and four-phonon processes are discussed on the basis of density functional theory calculations.

  20. Terahertz detectors arrays based on orderly aligned InN nanowires

    PubMed Central

    Chen, Xuechen; Liu, Huiqiang; Li, Qiuguo; Chen, Hao; Peng, Rufang; Chu, Sheng; Cheng, Binbin

    2015-01-01

    Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series. PMID:26289498

  1. Anomalous magnetism of superconducting Mg-doped InN film

    NASA Astrophysics Data System (ADS)

    Chang, P. H.; Hong, S. Y.; Lin, W. T.; Guo, Y. X.

    2016-02-01

    We report on the Meissner effect of Mg-doped InN film with superconducting transition onset temperature Tc,onset of 5 K. Mg-doped InN is magnetically ordered and exhibits a simultaneous first-order magnetic and electric transition near 50 K. Its behavior is similar to that of iron-based superconductors. A strong correlation is proposed to exist between structural distortion and superconductivity when Mg is doped into InN. The suppression of magnetic ordering close to Tc by doping is further demonstrated by anisotropic magnetoresistance and M-H measurements. The findings suggest that the superconducting mechanism in the system may not be conventional BCS.

  2. Stopping Power Of He, C And O In InN

    SciTech Connect

    Barradas, N. P.; Alves, E.; Siketic, Z.; Radovic, I. Bogdanovic

    2011-06-01

    Group III nitrides such as InN, GaN, and their alloys are increasingly important in a host of optoelectronic and electronic devices. The presence of unintentional impurities is one of the factors that can strongly affect the electronic properties of these materials, and thus ion beam analysis techniques can play a fundamental role, in particular heavy ion elastic recoil detection analysis tracing and quantifying these contaminations. However, stopping powers in InN and GaN have not yet been measured, and data analysis relies on using the Bragg rule, which is often inaccurate. We have used a bulk method, previously developed by us and applied successfully to other systems, to determine experimentally the stopping power of several ions in InN. The results of our measurements and bulk method analysis are presented.

  3. Large area InN terahertz emitters based on the lateral photo-Dember effect

    SciTech Connect

    Wallauer, Jan Grumber, Christian; Walther, Markus; Polyakov, Vladimir; Iannucci, Robert; Cimalla, Volker; Ambacher, Oliver

    2015-09-14

    Large area terahertz emitters based on the lateral photo-Dember effect in InN (indium nitride) are presented. The formation of lateral photo-Dember currents is induced by laser-illumination through a microstructured metal cover processed onto the InN substrate, causing an asymmetry in the lateral photogenerated charge carrier distribution. Our design uses simple metal structures, which are produced by conventional two-dimensional micro-structuring techniques. Having favoring properties as a photo-Dember material InN is particularly well-suited as a substrate for our emitters. We demonstrate that the emission intensity of the emitters can be significantly influenced by the structure of the metal cover leaving room for improvement by optimizing the masking structures.

  4. Terahertz detectors arrays based on orderly aligned InN nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Xuechen; Liu, Huiqiang; Li, Qiuguo; Chen, Hao; Peng, Rufang; Chu, Sheng; Cheng, Binbin

    2015-08-01

    Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

  5. Surface charge accumulation of InN films grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lu, Hai; Schaff, William J.; Eastman, Lester F.; Stutz, C. E.

    2003-03-01

    A series of thin InN films down to 10 nm in thickness were prepared by molecular-beam epitaxy on either AlN or GaN buffers under optimized growth conditions. By extrapolating the fitted curve of sheet carrier density versus film thickness to zero film thickness, a strong excess sheet charge was derived, which must come from either the surface or the interface between InN and its buffer layer. Since metal contacts, including Ti, Al, Ni, and a Hg probe, can always form an ohmic contact on InN without any annealing, it is determined that at least part of the excess charge is surface charge, which was also confirmed by capacitance-voltage measurements.

  6. Anomalous surface potential behavior observed in InN by photoassisted Kelvin probe force microscopy

    NASA Astrophysics Data System (ADS)

    Sun, Xiaoxiao; Wei, Jiandong; Wang, Xinqiang; Wang, Ping; Li, Shunfeng; Waag, Andreas; Li, Mo; Zhang, Jian; Ge, Weikun; Shen, Bo

    2017-05-01

    Lattice-polarity dependence of InN surface photovoltage has been identified by an anomalous surface potential behavior observed via photoassisted Kelvin probe force microscopy. Upon above bandgap light illumination in the ambient atmosphere, the surface photovoltage of the In-polar InN shows a pronounced decrease, while that of the N-polar one keeps almost constant. Those different behaviors between N-polar and In-polar surfaces are attributed to a polarity-related surface reactivity, which is found not to be influenced by Mg-doping. These findings provide a simple and non-destructive approach to determine the lattice polarity and allow us to suggest that the In-polar InN, especially that with buried p-type conduction, should be chosen for sensing application.

  7. Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates.

    PubMed

    Wang, Xiao; Zhang, Guozhen; Xu, Yang; Wu, Hao; Liu, Chang

    2017-12-01

    InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolumns were transferred onto p-type silicon substrates after etching off the AAO templates. Current-voltage characteristic of the transferred n-InN/p-Si heterojunctions shows on/off ratio as high as 4.65 × 10(3) at 2 V. This work offers a potential way to grow transferable devices with improving performances.

  8. Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

    NASA Astrophysics Data System (ADS)

    Segura-Ruiz, J.; Molina-Sánchez, A.; Garro, N.; García-Cristóbal, A.; Cantarero, A.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

    2010-09-01

    Photoluminescence excitation (PLE) spectra have been measured for a set of self-assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular-beam epitaxy. The PLE experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN NW. The differences in the PLE spectra can be accounted for the inhomogeneous electron distribution within the NWs caused by a bulk donor concentration (ND+) and a two-dimensional density of ionized surface states (Nss+) . For NW radii larger than 30 nm, ND+ and Nss+ modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data.

  9. Hydrogen adsorbed at N-polar InN: Significant changes in the surface electronic properties

    NASA Astrophysics Data System (ADS)

    Eisenhardt, A.; Krischok, S.; Himmerlich, M.

    2015-06-01

    The interaction of atomic hydrogen and ammonia with as-grown N-polar InN surfaces is investigated using in situ photoelectron spectroscopy. Changes in the surface electronic properties, including the band alignment and work function, as well as the chemical bonding states of the substrate and adsorbates are characterized. Ammonia molecules are dissociating at the InN surface, resulting in adsorption of hydrogen species. Consequently, the considerable changes of the chemical and electronic properties of the InN surface during ammonia interaction are almost identical to those found for adsorption of atomic hydrogen. In both cases, hydrogen atoms preferentially bond to surface nitrogen atoms, resulting in the disappearance of the nitrogen dangling-bond-related occupied surface state close to the valence band edge at ˜1.6 eV binding energy and the formation of new occupied electron states at the conduction band edge. Furthermore, a decrease in work function during adsorption from 4.7 to 3.7-3.8 eV, as well as an increase in the surface downward band bending by 0.3 eV, confirm that hydrogen is acting as electron donor at InN surfaces and therefore has to be considered as one main reason for the surface electron accumulation observed at N-polar InN samples exposed to ambient conditions, for example as the dissociation product of molecules. The measured formation and occupation of electronic states above the conduction band minimum occur in conjunction with the observed increase in surface electron concentration and underline the relationship between the energy position of occupied electron states and surface band alignment for InN as a small-band-gap semiconductor.

  10. Two-dimensional electron gas in monolayer InN quantum wells

    DOE PAGES

    Pan, Wei; Dimakis, Emmanouil; Wang, George T.; ...

    2014-11-24

    We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×1015 cm-2 and 420 cm2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

  11. Two-dimensional electron gas in monolayer InN quantum wells

    SciTech Connect

    Pan, Wei; Dimakis, Emmanouil; Wang, George T.; Moustakas, Theodore D.; Tsui, Daniel C.

    2014-11-24

    We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×1015 cm-2 and 420 cm2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

  12. Sulfur passivation of surface electrons in highly Mg-doped InN

    NASA Astrophysics Data System (ADS)

    Linhart, W. M.; Chai, J.; McConville, C. F.; Durbin, S. M.; Veal, T. D.

    2013-09-01

    Electron accumulation with a sheet density greater than 1013 cm-2 usually occurs at InN surfaces. Here, the effects of treatment with ammonium sulfide ((NH4)2Sx) on the surface electronic properties of highly Mg-doped InN (>4×1018 cm-3) have been investigated with high resolution x-ray photoemission spectroscopy. The valence band photoemission spectra show that the surface Fermi level decreases by approximately 0.08 eV with (NH4)2Sx treatment, resulting in a decrease of the downward band bending and up to a 70% reduction in the surface electron sheet density.

  13. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

    NASA Astrophysics Data System (ADS)

    Jantawongrit, P.; Sanorpim, S.; Yaguchi, H.; Orihara, M.; Limsuwan, P.

    2015-08-01

    InN film was grown on 4H-SiC (0001) substrate by RF plasma-assisted molecular beam epitaxy (RF-MBE). Prior to the growth of InN film, an InN buffer layer with a thickness of ∼5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy (TEM). The results show that a high density of line contrasts, parallel to the growth direction (c-axis), was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g=11\\bar{2}0 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains. Project supported by the Thailand Center of Excellence in Physics (ThEP) and the King Mongkut's University of Technology Thonburi under The National Research University Project. One of the authors (S. Sanorpim) was supported by the National Research Council of Thailand (NRCT) and the Thai Government Stimulus Package 2 (TKK2555), under the Project for Establishment of Comprehensive Center for Innovative Food, Health Products and Agriculture.

  14. Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE

    PubMed Central

    2012-01-01

    This paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN template. Scanning electron microscopic images of the surface morphology revealed a two-dimensional growth at a rate of approximately 0.85 μm/h. Cross-sectional transmission electron microscopy images identified a sharp InN/GaN interface and a clear epitaxial orientation relationship of [0001]InN // [0001]GaN and ( 2¯110)InN // ( 2¯110)GaN. The optical properties of wurtzite InN nanorods were determined according to the photoluminescence, revealing a band gap of 0.77 eV. PMID:22908859

  15. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Tetragonal Distortion of InN Thin Films by RBS/Channeling

    NASA Astrophysics Data System (ADS)

    Ding, Zhi-Bo; Wu, Wei; Wang, Kun; Fa, Tao; Yao, Shu-De

    2009-08-01

    Rutherford backscattering and channeling spectrometry (RBS/C) are used to identify the crystalline quality (χ min = 4.87%) of an InN thin film as a function of depth, and make a non-destructive quantitative analysis of the structure, in order to analyze the tetragonal distortion of the InN thin film at the depth determined.

  16. Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates

    SciTech Connect

    Kehagias, Th.; Dimitrakopulos, G. P.; Koukoula, T.; Komninou, Ph.; Ajagunna, A. O.; Georgakilas, A.; Tsagaraki, K.; Adikimenakis, A.

    2013-10-28

    Transmission electron microscopy has been employed to analyze the direct nucleation and growth, by plasma-assisted molecular beam epitaxy, of high quality InN (0001) In-face thin films on (111) Si substrates. Critical steps of the heteroepitaxial growth process are InN nucleation at low substrate temperature under excessively high N-flux conditions and subsequent growth of the main InN epilayer at the optimum conditions, namely, substrate temperature 400–450 °C and In/N flux ratio close to 1. InN nucleation occurs in the form of a very high density of three dimensional (3D) islands, which coalesce very fast into a low surface roughness InN film. The reduced reactivity of Si at low temperature and its fast coverage by InN limit the amount of unintentional Si nitridation by the excessively high nitrogen flux and good bonding/adhesion of the InN film directly on the Si substrate is achieved. The subsequent overgrowth of the main InN epilayer, in a layer-by-layer growth mode that enhances the lateral growth of InN, reduces significantly the crystal mosaicity and the density of threading dislocations is about an order of magnitude less compared to InN films grown using an AlN/GaN intermediate nucleation/buffer layer on Si. The InN films exhibit the In-face polarity and very smooth atomically stepped surfaces.

  17. Golf Tournament Drives in a Win for the Children’s Inn | Poster

    Cancer.gov

    By Carolynne Keenan, Contributing Writer On September 23, golfers took to the Clustered Spires golf course in Frederick, Md., for a cause. The R&W Club Frederick hosted its inaugural golf tournament, with proceeds benefiting the National Institutes of Health (NIH) Children’s Inn.

  18. Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy

    NASA Astrophysics Data System (ADS)

    Sarwar, A. T. M. Golam; Yang, Fan; Esser, Bryan D.; Kent, Thomas F.; McComb, David W.; Myers, Roberto C.

    2016-06-01

    Self-assembly of hexagonal InN micro-mushrooms on Si (111) substrates by molecular beam epitaxy is reported. Scanning electron microscopy (SEM) reveals hexagonal mushroom caps with smooth top surfaces and a step-like morphology at the bottom surface. A detailed growth study along with SEM measurements reveals that an upside-down pendeoepitaxy mechanism underlies the formation of these structures. Cryogenic temperature photoluminescence measurements on the InN disks show a dominant band-to-acceptor recombination peak at 0.68 eV. Cross-section annular bright field (ABF-) scanning transmission electron microscopy (STEM) reveals that the growth of these structures occurs along the [ 000 1 bar ] crystallographic orientation (N-face). Plan-view high angle annular dark field (HAADF) STEM in the center of the micro-disks reveals a hexagonal lattice indicative of stacking faults. However, at the outskirt of the micro-disk, surprisingly, a honeycomb lattice is observed in plan view STEM indicating a perfect freestanding Wurtzite InN disk that is free of stacking faults. This result opens a pathway for realizing strain-free, freestanding InN substrates.

  19. Dopants and Defects in InN and InGaN Alloys

    SciTech Connect

    Walukiewicz, W.; Jones, R.E.; Li, S.X.; Yu, K.M.; Ager III, J.W.; Haller, E.E.; Lu, H.; Schaff, W.J.

    2005-04-01

    We have performed systematic studies of the effects of high-energy particle irradiation on the properties of InGaN alloys. In agreement with the amphoteric defect model, irradiation of InN produces donor-like defects. The electron concentration increases with increasing radiation dose and saturates at 4 x 10{sup 20} cm{sup -3} at very high doses. We find that the increase of the electron concentration causes a large blue-shift of the absorption edge, which is well-explained by the Burstein-Moss effect. The maximum electron concentration decreases with increasing Ga fraction in irradiated In{sub 1-x}Ga{sub x}N alloys as the conduction band edge approaches the Fermi level stabilization energy (E{sub FS}). For x > 0.66 the conduction band edge moves above E{sub FS} and the irradiation of n-type films produces acceptor-like defects, resulting in a reduced free electron concentration. An analysis of the concentration dependence of the electron mobility in InN indicates that the dominant defects in irradiated InN are triply-charged donors. Finally, we show that InN films doped with Mg acceptors behave like undoped films above a threshold radiation dose.

  20. Golf Tournament Drives in a Win for the Children’s Inn | Poster

    Cancer.gov

    By Carolynne Keenan, Contributing Writer On September 23, golfers took to the Clustered Spires golf course in Frederick, Md., for a cause. The R&W Club Frederick hosted its inaugural golf tournament, with proceeds benefiting the National Institutes of Health (NIH) Children’s Inn.

  1. Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

    SciTech Connect

    Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S. M.

    2012-10-15

    The issue of ambiguous values of the band gap (0.6 to 2 eV) of InN thin film in literature has been addressed by a careful experiment. We have grown wurtzite InN films by PA-MBE simultaneously on differently modified c-plane sapphire substrates and characterized by complementary structural and chemical probes. Our studies discount Mie resonances caused by metallic In segregation at grain boundaries as the reason for low band gap values ( Almost-Equal-To 0.6 eV) and also the formation of Indium oxides and oxynitrides as the cause for high band gap value ( Almost-Equal-To 2.0 eV). It is observed that polycrystallinity arising from azimuthal miss-orientation of c-oriented wurtzite InN crystals increases the carrier concentration and the band gap values. We have reviewed the band gap, carrier concentration, and effective mass of InN in literature and our own measurements, which show that the Moss-Burstein relation with a non-parabolic conduction band accounts for the observed variation of band gap with carrier concentration.

  2. Nanostructural and electronic properties of polytypes in InN nanocolumns

    SciTech Connect

    Kioseoglou, J.; Koukoula, T.; Komninou, Ph.; Kehagias, Th.; Georgakilas, A.; Androulidaki, M.

    2013-08-21

    Transmission electron microscopy techniques and density functional theory calculations were employed to investigate the nanostructural and electronic properties of InN polytypes observed in InN nanocolumns, grown on Si(111) by molecular beam epitaxy. Moiré fringes and alternating hexagonal and cubic lattice stacking sequences along the c-axis, observed among the wurtzite layers, implied the presence of different structures embedded in the basic 2H structure of the nanocolumns. Quantitative electron diffraction analysis and high-resolution image simulations verified the coexistence of the wurtzite structure with the 4H, 6H, and the 3C zinc-blende structural polytypes. Total energies calculations established the 2H wurtzite structure as the most stable polytype. The band gap of all polytypes was found direct with the energies and the band gaps of the 4H (E{sub g} = 0.64 eV) and 6H (E{sub g} = 0.60 eV) structures calculated between the corresponding values of the 2H (E{sub g} = 0.75 eV) and 3C (E{sub g} = 0.49 eV) basic structures. Theoretical and experimental analysis showed that at the initial stages of growth InN nanocolumns were under tensile strain along both the basal plane and growth direction. Structural polytypes were then introduced in the form of embedded inclusions to accommodate the excess tensile strain along the growth direction, allowing the entire process of polymorphism to be the dominant strain relaxation mechanism of InN nanocolumns. Moreover, the lattice and energetic properties and band gap values of InN polytypes showed a linear dependence on hexagonality, while the presence of polytypes led to a characteristic broadening of the photoluminescence emission peak toward lower emission energies.

  3. Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Dinh, Duc V.; Skuridina, D.; Solopow, S.; Pristovsek, M.; Vogt, P.; Kneissl, M.

    2013-08-01

    We report on metal-organic vapor phase epitaxy (MOVPE) of (0001)InN layers simultaneously grown on a-plane (112¯0) and c-plane (0001) sapphire substrates. The substrates were nitridated at temperatures from 500 °C to 1050 °C prior to the growth of c-plane InN layers. Nitridation determined the polarity, the crystallinity, and the surface morphology of the InN layers. Nitridation temperatures above 800 °C lead to N-polar InN layers, while nitridation temperatures from 700 °C to 750 °C produce mixed-polar InN layers, and nitridation temperatures from 500 °C to 650 °C produce In-polar InN layers. The roughness and crystallinity of the InN layers are correlated with the changes of polarity. The incorporation of nitrogen into the nitridation layers at different nitridation temperatures was measured. A strong N-Al bond signal after nitridation is correlated with N-polarity layers after overgrowth.

  4. In induced reconstructions of Si(1 1 1) as superlattice matched epitaxial templates for InN growth

    SciTech Connect

    Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S.M.

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► A novel growth method to form InN at low growth temperatures. ► Use of Si reconstruction as a growth template for group III nitrides. ► Band gap variation of InN – Moss–Burstein shift – non-parabolic conduction band for InN. ► Super lattice matching epitaxy of metal induced reconstructions with III–V unit cell. -- Abstract: Indium induced surface reconstructions of Si(1 1 1)-7 × 7 are used as templates to grow high quality InN. We grow InN on Si(1 1 1)-7 × 7, Si(1 1 1)-4 × 1-In and Si(1 1 1)-1 × 1-In reconstructed surfaces and study the quality of the films formed using complementary characterization tools. InN grown on Si(1 1 1)-1 × 1-In reconstruction shows superior film quality with lowest band-edge emission having a narrow full width at half maximum, intense and narrow 0 0 0 2 X-ray diffraction, low surface roughness and carrier concentration an order lower than other samples. We attribute the high quality of the film formed at 300 °C to the integral matching of InN and super lattice dimensions, we also study the reasons for the band gap variation of InN in the literature. Present study demonstrates the proposed Superlattice Matched Epitaxy can be a general approach to grow good quality InN at much lower growth temperature on compatible In induced reconstructions of the Si surface.

  5. InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

    NASA Astrophysics Data System (ADS)

    Lye, Khe Shin; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-07-01

    Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.

  6. Electrically injected near-infrared light emission from single InN nanowire p-i-n diode

    SciTech Connect

    Le, Binh Huy; Zhao, Songrui; Tran, Nhung Hong; Mi, Zetian

    2014-12-08

    We report on the achievement of electroluminescence emission of single InN p-i-n nanowire devices. InN p-i-n nanowire structures were grown directly on Si substrate by plasma-assisted molecular beam epitaxy and subsequently transferred to foreign substrate for the fabrication of single nanowire light emitting diodes. Electroluminescence emission with a peak energy of 0.71 eV (1.75 μm) was observed at 77 K. The measurement of near-bandgap electroluminescence provides unambiguous evidence for the achievement of p-type conduction of InN.

  7. InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

    SciTech Connect

    Lye, Khe Shin; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-07-18

    Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.

  8. Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

    NASA Astrophysics Data System (ADS)

    Liu, K. W.; Young, S. J.; Chang, S. J.; Hsueh, T. H.; Chen, Y. Z.; Chen, K. J.; Hung, H.; Wang, S. M.; Wu, Y. L.

    2012-05-01

    This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism.

  9. High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

    NASA Astrophysics Data System (ADS)

    Hsiao, Ching-Lien; Liu, Ting-Wei; Wu, Chien-Ting; Hsu, Hsu-Cheng; Hsu, Geng-Ming; Chen, Li-Chyong; Shiao, Wen-Yu; Yang, C. C.; Gällström, Andreas; Holtz, Per-Olof; Chen, Chia-Chun; Chen, Kuei-Hsien

    2008-03-01

    High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20K shows a peak at a very low energy, 0.636eV, and an absorption edge at ˜0.62eV is observed at 2K, which is the lowest bandgap reported to date among the III-nitride semiconductors.

  10. R&W Club Frederick Raises $1,500 for The Children’s Inn at Annual Golf Tournament | Poster

    Cancer.gov

    Forty-four government and contractor employees, along with their friends and family members, took to the Maryland National Golf Club course this fall for a cause. The R&W Club Frederick held its third annual golf tournament at the Middletown, Md., golf course on Sept. 14 to raise funds for The Children’s Inn at NIH, which celebrated its 25th anniversary this year. The Inn provides support and a home away from home for seriously ill children and their families receiving treatment at the NIH Clinical Center. Through the tournament, the club raised approximately $1,500 for The Children’s Inn, according to Tanya Ransom, biologist, NCI Center for Cancer Research, and secretary of the R&W Club Frederick. She also coordinated the golf tournament. After the tournament, a silent auction of sports memorabilia and collectibles, sponsored by Great Moments, Frederick, was held, and a portion of the proceeds also went to the Inn.

  11. R&W Club Frederick Raises $1,500 for The Children’s Inn at Annual Golf Tournament | Poster

    Cancer.gov

    Forty-four government and contractor employees, along with their friends and family members, took to the Maryland National Golf Club course this fall for a cause. The R&W Club Frederick held its third annual golf tournament at the Middletown, Md., golf course on Sept. 14 to raise funds for The Children’s Inn at NIH, which celebrated its 25th anniversary this year. The Inn provides support and a home away from home for seriously ill children and their families receiving treatment at the NIH Clinical Center. Through the tournament, the club raised approximately $1,500 for The Children’s Inn, according to Tanya Ransom, biologist, NCI Center for Cancer Research, and secretary of the R&W Club Frederick. She also coordinated the golf tournament. After the tournament, a silent auction of sports memorabilia and collectibles, sponsored by Great Moments, Frederick, was held, and a portion of the proceeds also went to the Inn.

  12. Epitaxial relationship of semipolar s-plane (1101) InN grown on r-plane sapphire

    SciTech Connect

    Dimitrakopulos, G. P.

    2012-07-02

    The heteroepitaxy of semipolar s-plane (1101) InN grown directly on r-plane sapphire by plasma-assisted molecular beam epitaxy is studied using transmission electron microscopy techniques. The epitaxial relationship is determined to be (1101){sub InN} Parallel-To (1102){sub Al{sub 2O{sub 3}}}, [1120]{sub InN} Parallel-To [2021]{sub Al{sub 2O{sub 3}}}, [1102]{sub InN}{approx} Parallel-To [0221]{sub Al{sub 2O{sub 3}}}, which ensures a 0.7% misfit along [1120]{sub InN}. Two orientation variants are identified. Proposed geometrical factors contributing to the high density of basal stacking faults, partial dislocations, and sphalerite cubic pockets include the misfit accommodation and reduction, as well as the accommodation of lattice twist.

  13. Solar hot water system installed at Days Inn Motel, Dallas, Texas (Valley View)

    SciTech Connect

    1980-09-01

    The solar hot water system installed in the Days Inns of America, Inc., Days Inn Motel (120 rooms), I-35/2276 Valley View Lane, Dallas, Texas is described. The solar system was designed by ILI Incorporated to provide 65 percent of the total domestic hot water (DHW) demand. The Solar Energy Products, model CU-30WW liquid (water) flat plate collector (1000 square feet) system automatically drains into the 1000 gallon steel storage tank when the solar pump is not running. This system is one of eleven systems planned. Heat is transferred from the DHW tanks through a shell and tube heat exchanger. A circulating pump between the DHW tanks and heat exchanger enables solar heated water to help make up standby losses. All pumps are controlled by differential temperature controllers. The operation of this system was begun March 11, 1980. The solar components were partly funded ($15,000 of 30,000 cost) by a Department of Energy grant.

  14. Circular photogalvanic effect at inter-band excitation in InN

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Zhang, R.; Liu, B.; Xie, Z. L.; Xiu, X. Q.; Han, P.; Lu, H.; Zheng, Y. D.; Chen, Y. H.; Tang, C. G.; Wang, Z. G.

    2008-01-01

    The circular photogalvanic effect (CPGE) is observed in InN at inter-band excitation. The function of the CPGE induced current on laser helicity is experimentally demonstrated and illustrated with the microscopic model. A spin-dependent current obtained in InN is one order larger than in the AlGaN/GaN heterostructures at inter-band excitation. The dependence of CPGE current amplitude on light power and incident angle can be well evaluated with phenomenological theory. This sizeable spin-dependent current not only provides an opportunity to realize spin polarized current at room temperature, but also can be utilized as a reliable tool of spin splitting investigation in semiconductors.

  15. Reconstruction of an inn fire scene using the Fire Dynamics Simulator (FDS) program.

    PubMed

    Chi, Jen-Hao

    2013-01-01

    An inn fire occurring in the middle of the night usually causes a great deal more injuries and deaths. This article examines the case study of an inn fire accident that resulted in the most serious casualties in Taiwan's history. Data based on the official fire investigation report and NFPA921 regulations are used, and the fire scenes are reconstructed using the latest Fire Dynamics Simulator (FDS) program from NIST. The personnel evacuation time and time variants for various fire hazard factors of reconstructive analysis clarify the reason for such a high number of casualties. It reveals that the FDS program has come to play an essential role in fire investigation. The close comparison between simulation result and the actual fire scene also provides fire prevention engineers, a possible utilization of FDS to examine the effects of improved schemes for fire safety of buildings.

  16. Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

    PubMed Central

    Li, Huijie; Zhao, Guijuan; Wang, Lianshan; Chen, Zhen; Yang, Shaoyan

    2016-01-01

    Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials. PMID:28335323

  17. Conservation of the Sinclair Inn Museum, and the Painted Room Annapolis Royal, Nova Scotia, Canada

    NASA Astrophysics Data System (ADS)

    Shaftel, A.; Ward, J.

    2017-08-01

    Conservation of the historic 18thC. Sinclair Inn Museum, and of the recently discovered late 18th/early 19thC. unique panoramic wall paintings located in an upstairs room, are co-dependent. This project was carried out with Canadian Conservation Institute (CCI) staff, and Conservator in Private Practice Ann Shaftel. This paper will introduce the Sinclair Inn Museum, outline the CCI murals and building investigations of 2011-15, the mural investigation of 2015-16, which confirmed that the mural extended to all four walls of the function room, now referred to as the Painted Room, and to describe how it has been revealed and conserved to date.

  18. Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature

    SciTech Connect

    Dhara, S.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Sastry, V.S.; Nair, K.G.M.; Hsu, G.M.; Chen, L.C.; Chen, K.H.; Santhakumar, K.; Soga, T.

    2006-06-12

    The InN phase is grown in crystalline InP(100) substrates by 50 keV N{sup +} implantation at an elevated temperature of 400 deg. C followed by annealing at 525 deg. C in N{sub 2} ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak {approx}1.06 eV at temperatures {<=}150 K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.

  19. BN, AlN, GaN, InN: Charge Neutrality Level, Surface, Interfaces, Doping

    NASA Astrophysics Data System (ADS)

    Brudnyi, V. N.

    2017-04-01

    On the basis of the charge neutrality concept, the analysis is fulfilled of the experimental data on the electron properties of the defective semiconductors after the radiation exposure, the electronic parameters of interfaces, surface work function and efficiency of doping with the impurities of high solubility in the nitrides of the group wz-III-N (BN, AlN, GaN, InN). The numerical evaluations of the charge neutrality levels in these compounds are presented.

  20. Growth modes of InN (000-1) on GaN buffer layers on sapphire

    NASA Astrophysics Data System (ADS)

    Liu, Bing; Kitajima, Takeshi; Chen, Dongxue; Leone, Stephen R.

    2005-03-01

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  1. Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire

    SciTech Connect

    Ajagunna, A. O.; Iliopoulos, E.; Tsiakatouras, G.; Tsagaraki, K.; Androulidaki, M.; Georgakilas, A.

    2010-01-15

    The heteroepitaxy of a-plane (1120) InN films on r-plane (1102) sapphire substrates, by nitrogen radio frequency plasma-assisted molecular beam epitaxy, has been investigated and compared to that of c-plane (0001) InN. The epitaxial growth of a-plane InN proceeded through the nucleation, growth, and coalescence of three-dimensional islands, resulting in surface roughness that increased monotonically with epilayer thickness. The full width at half maximum of (1120) x-ray diffraction rocking curves decreased significantly with increasing InN thickness, characteristic of structural improvement, and it reached the value of 24 arcmin for a 1 {mu}m thick film. Hall-effect measurements exhibited a similar dependence of electron concentration and mobility on thickness for both the a- and c-plane InN films. The analysis of the Hall-effect measurements, by considering the contribution of two conducting layers, indicates a similar accumulation of low mobility electrons with N{sub s}>10{sup 14} cm{sup -2} at the films' surface/interfacial region for both the a- and c-plane InN films. From optical transmittance measurements, the absorption edge of 0.768 eV was determined for the 1 {mu}m a-plane film, consistent with the expected Burstein-Moss effect. Photoluminescence spectra exhibited a lower energy peak at 0.631 eV, suggesting defect-related transitions.

  2. First principles study of effects of vacancies on electronic, magnetic and optical properties of InN nanosheet

    NASA Astrophysics Data System (ADS)

    Farzan, M.; Elahi, S. M.; Abolhassani, M. R.; Salehi, H.

    2017-05-01

    Based on the first principle study within the generalized gradient approximation (GGA) in the density functional theory (DFT) implemented in Wien2k code, the effects of vacancies on electronic, magnetic and optical properties of InN nanosheet were investigated. We found that the vacancies in InN nanosheet induce spin polarized states in the band gap, and VN-defect, VIn-defect and VIn&N-defect induce local magnetic moments of (-0.01)μB , 3.0μB and 2.0μB , respectively. Also, we calculated the dielectric function, refraction index, extinction index, reflectivity, absorption coefficient, optical conductivity and energy loss function of the perfect InN nanosheet and VN-defect, VIn-defect and VIn&N-defect of InN nanosheet for both polarization directions of light, i.e. E||x (electric field parallel to nanosheet) and E||z (electric field perpendicular to nanosheet). Our results show that InN nanosheet is a semiconductor which is dependent on the type of vacancies and that the optical properties of perfect and defective InN nanosheets are anisotropic for both polarization states.

  3. Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

    NASA Astrophysics Data System (ADS)

    Kamimura, J.; Bogdanoff, P.; Ramsteiner, M.; Geelhaar, L.; Riechert, H.

    2016-07-01

    InN nanowires were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. Raman spectroscopy showed that the nanowires were strain-free and allowed the deduction of a free carrier concentration of 1-2 × 1018 cm-3. This value was confirmed by a Mott-Schottky analysis of electrolyte-based capacitance-voltage measurements. In addition, these measurements directly revealed the existence of a surface accumulation layer in the InN nanowires. In cyclic voltammetry measurements under irradiation from a Xe lamp with about 100 mW cm-2, high photocurrents of about 4 and 11 mA cm-2 were observed at 1.23 and 1.63 V bias potential versus reversible hydrogen electrode, respectively, using H2O2 as a hole scavenger. By comparing the photocurrent with and without H2O2, the main limiting factor in the performance of InN nanowire photoanodes was identified to be the poor catalytic efficiency for water oxidation at the surface, followed by parasitic bulk recombination.

  4. Ab initio study of MOCVD synthesis of InN and GaN

    NASA Astrophysics Data System (ADS)

    Walkosz, Weronika; Zapol, Peter; Highland, Matthew J.; Fuoss, Paul H.; Stephenson, Gregory B.

    2011-03-01

    A detailed understanding of MOCVD growth of group III nitrides is important for improved control over their properties and performance in a wide range of applications. Because of the relative instability of InN, chemically active precursors such as NH3 are typically used to provide the high nitrogen activity needed for growth. Our goal is to understand the mechanism and species involved in active nitrogen formation on the growth surface. Here we present results of density functional theory calculations for the decomposition of NH3 on InN and GaN (0001) surfaces through reaction intermediates such as adsorbed NH2 and NH. The calculated equilibrium surface structures along with the reaction barriers for the dissociation pathways of NH3 on these surfaces are described. Kinetic modeling based on the calculated barriers to determine reaction mechanisms and effective nitrogen activities is discussed. The results will be used to elucidate chemical kinetics on GaN and InN (0001) surfaces under MOCVD growth conditions with the aim to optimize synthesis conditions and precursors for effective growth of metastable nitrides. Work supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-06CH11357.

  5. Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)

    NASA Astrophysics Data System (ADS)

    Haider, Ali; Kizir, Seda; Biyikli, Necmi

    2016-04-01

    In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments were trimethylindium (TMI) and N2 plasma. Process parameters including TMI pulse time, N2 plasma exposure time, purge time, and deposition temperature have been optimized for self-limiting growth of InN with in ALD window. With the increase in exposure time of N2 plasma from 40 s to 100 s at 200 °C, growth rate showed a significant decrease from 1.60 to 0.64 Å/cycle. At 200 °C, growth rate saturated as 0.64 Å/cycle for TMI dose starting from 0.07 s. Structural, optical, and morphological characterization of InN were carried out in detail. X-ray diffraction measurements revealed the hexagonal wurtzite crystalline structure of the grown InN films. Refractive index of the InN film deposited at 200 °C was found to be 2.66 at 650 nm. 48 nm-thick InN films exhibited relatively smooth surfaces with Rms surface roughness values of 0.98 nm, while the film density was extracted as 6.30 g/cm3. X-ray photoelectron spectroscopy (XPS) measurements depicted the peaks of indium, nitrogen, carbon, and oxygen on the film surface and quantitative information revealed that films are nearly stoichiometric with rather low impurity content. In3d and N1s high-resolution scans confirmed the presence of InN with peaks located at 443.5 and 396.8 eV, respectively. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) further confirmed the polycrystalline structure of InN thin films and elemental mapping revealed uniform distribution of indium and nitrogen along the scanned area of the InN film. Spectral absorption measurements exhibited an optical band edge around 1.9 eV. Our findings demonstrate that HCPA-ALD might be a promising technique to grow crystalline wurtzite InN thin films at low substrate temperatures.

  6. Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)

    SciTech Connect

    Haider, Ali E-mail: biyikli@unam.bilkent.edu.tr; Kizir, Seda; Biyikli, Necmi E-mail: biyikli@unam.bilkent.edu.tr

    2016-04-15

    In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments were trimethylindium (TMI) and N{sub 2} plasma. Process parameters including TMI pulse time, N{sub 2} plasma exposure time, purge time, and deposition temperature have been optimized for self-limiting growth of InN with in ALD window. With the increase in exposure time of N{sub 2} plasma from 40 s to 100 s at 200 °C, growth rate showed a significant decrease from 1.60 to 0.64 Å/cycle. At 200 °C, growth rate saturated as 0.64 Å/cycle for TMI dose starting from 0.07 s. Structural, optical, and morphological characterization of InN were carried out in detail. X-ray diffraction measurements revealed the hexagonal wurtzite crystalline structure of the grown InN films. Refractive index of the InN film deposited at 200 °C was found to be 2.66 at 650 nm. 48 nm-thick InN films exhibited relatively smooth surfaces with Rms surface roughness values of 0.98 nm, while the film density was extracted as 6.30 g/cm{sup 3}. X-ray photoelectron spectroscopy (XPS) measurements depicted the peaks of indium, nitrogen, carbon, and oxygen on the film surface and quantitative information revealed that films are nearly stoichiometric with rather low impurity content. In3d and N1s high-resolution scans confirmed the presence of InN with peaks located at 443.5 and 396.8 eV, respectively. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) further confirmed the polycrystalline structure of InN thin films and elemental mapping revealed uniform distribution of indium and nitrogen along the scanned area of the InN film. Spectral absorption measurements exhibited an optical band edge around 1.9 eV. Our findings demonstrate that HCPA-ALD might be a promising technique to grow crystalline wurtzite InN thin films at low substrate

  7. High Cubic-Phase Purity InN on MgO (001) Using Cubic-Phase GaN as a Buffer Layer

    SciTech Connect

    Sanorpim, S.; Kuntharin, S.; Parinyataramas, J.; Yaguchi, H.; Iwahashi, Y.; Orihara, M.; Hijikata, Y.; Yoshida, S.

    2011-12-23

    High cubic-phase purity InN films were grown on MgO (001) substrates by molecular beam epitaxy with a cubic-phase GaN buffer layer. The cubic phase purity of the InN grown layers has been analyzed by high resolution X-ray diffraction, {mu}-Raman scattering and transmission electron microscopy. It is evidenced that the hexagonal-phase content in the InN overlayer much depends on hexagonal-phase content in the cubic-phase GaN buffer layer and increases with increasing the hexagonal-phase GaN content. From Raman scattering measurements, in addition, the InN layer with lowest hexagonal component (6%), only Raman characteristics of cubic TO{sub InN} and LO{sub InN} modes were observed, indicating a formation of a small amount of stacking faults, which does not affect on vibrational property.

  8. InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liu, Kuang-Wei; Chang, Shoou-Jinn; Young, Sheng-Joue; Hsueh, Tao-Hung; Hung, Hung; Mai, Yu-Chun; Wang, Shih-Ming; Chen, Kuan-Jen; Wu, Ya-Ling; Chen, Yue-Zhang

    2011-07-01

    The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

  9. Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal-Organic Vapor Phase Epitaxy.

    PubMed

    Tessarek, C; Fladischer, S; Dieker, C; Sarau, G; Hoffmann, B; Bashouti, M; Göbelt, M; Heilmann, M; Latzel, M; Butzen, E; Figge, S; Gust, A; Höflich, K; Feichtner, T; Büchele, M; Schwarzburg, K; Spiecker, E; Christiansen, S

    2016-06-08

    Vertically aligned hexagonal InN nanorods were grown mask-free by conventional metal-organic vapor phase epitaxy without any foreign catalyst. The In droplets on top of the nanorods indicate a self-catalytic vapor-liquid-solid growth mode. A systematic study on important growth parameters has been carried out for the optimization of nanorod morphology. The nanorod N-polarity, induced by high temperature nitridation of the sapphire substrate, is necessary to achieve vertical growth. Hydrogen, usually inapplicable during InN growth due to formation of metallic indium, and silane are needed to enhance the aspect ratio and to reduce parasitic deposition beside the nanorods on the sapphire surface. The results reveal many similarities between InN and GaN nanorod growth showing that the process despite the large difference in growth temperature is similar. Transmission electron microscopy, spatially resolved energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been performed to analyze the structural properties. Spatially resolved cathodoluminescence investigations are carried out to verify the optical activity of the InN nanorods. The InN nanorods are expected to be the material of choice for high-efficiency hot carrier solar cells.

  10. Adsorption of gas molecules on graphene-like InN monolayer: A first-principle study

    NASA Astrophysics Data System (ADS)

    Sun, Xiang; Yang, Qun; Meng, Ruishen; Tan, Chunjian; Liang, Qiuhua; Jiang, Junke; Ye, Huaiyu; Chen, Xianping

    2017-05-01

    Using first-principles calculation within density functional theory (DFT), we study the gas (CO, NH3, H2S, NO2, NO, SO2) adsorption properties on the surface of single-layer indium nitride (InN). Four different adsorption sites (Bridge, In, N, Hollow) are chosen to explore the most sensitive adsorption site. On the basis of the adsorption energy, band gap and charge transfer, we find that the most energetic favourable site is changeable between In site and N site for different gases. Moreover, our results reveal that InN is sensitive to NH3, SO2, H2S and NO2, by a physisorption or a chemisorption nature. We also perform a perpendicular electric field to the system and find that the applied electric field has a significant effect for the adsorption process. Besides, we also observed the desorption effects on NH3 adsorbed at the hollow site of InN when the electric field applied. In addition, the optical properties of InN monolayer affected by different gases are also discussed. Most of the gas adsorptions will cause the inhibition of light adsorption while the others can reduce the work function or enhance the adsorption ability in visible region. Our theoretical results indicate that monolayer InN is a promising candidate for gas sensing applications.

  11. Fundamental optical properties of InN grown by epitaxial lateral overgrowth method

    SciTech Connect

    Kametani, Tatsuma; Kamimura, Jumpei; Inose, Yuta; Kunugita, Hideyuki; Kikuchi, Akihiko; Kishino, Katsumi; Ema, Kazuhiro

    2013-12-04

    Optical properties of InN grown by the epitaxial lateral overgrowth (ELO) method have been studied using photoluminescence (PL) and excitation-correlation (EC) measurements. The PL spectrum is analyzed by free-electron recombination band (FERB) model, which shows that the ELO sample has a very low background carrier concentration (n=5.5*10{sup 16}[cm{sup −3]}). EC measurements show that the dependences of the band gap renormalization and Auger effect on the carrier concentrations are similar in spite of the different physical origins.

  12. Infrared analysis of hole properties of Mg-doped p-type InN films

    SciTech Connect

    Fujiwara, Masayuki; Ishitani, Yoshihiro; Wang Xinqiang; Che, Song-Bek; Yoshikawa, Akihiko

    2008-12-08

    Mg-doped InN films grown by plasma-assisted molecular beam epitaxy were characterized by infrared reflectance. Signatures of p-type conductivity in the spectra were obtained in the same doping density range where the existence of net acceptors was found by electrolyte capacitance-voltage measurements. Numerical spectrum analysis, which takes into account the large broadening factor of the normal mode energies of longitudinal optical phonon-plasmon coupling yielded high hole densities in the range of (0.1-1.2)x10{sup 19} cm{sup -3} and optical mobilities in the range of 25-70 cm{sup 2}/V s.

  13. Structural Differences in Mg-doped InN - Indication of Polytypism

    DTIC Science & Technology

    2010-01-01

    accumulation layer over- come by using electrolyte-based capacitance-voltage ( ECV ) measurements [6,7] and a combination of Hall ef- fect, photoluminescence...and ECV analysis [8]. Mg doped InN thin films were confirmed to be p-type. However, there are only few reports on structural properties of this...an increase of Mg concentration above 1.8x1020 cm-3 using ECV measure- ments leads to a change from p-conductivity to n-type. This concentration

  14. Nqrs Data for C10H12Br5Cl2InN2O [C10H10Br5Cl2InN2·H2O] (Subst. No. 1254)

    NASA Astrophysics Data System (ADS)

    Chihara, H.; Nakamura, N.

    This document is part of Subvolume A `Substances Containing Ag … C10H15' of Volume 48 `Nuclear Quadrupole Resonance Spectroscopy Data' of Landolt-Börnstein - Group III `Condensed Matter'. It contains an extract of Section `3.2 Data tables' of the Chapter `3 Nuclear quadrupole resonance data' providing the NQRS data for C10H12Br5Cl2InN2O [C10H10Br5Cl2InN2·H2O] (Subst. No. 1254)

  15. Near-infrared InN quantum dots on high-In composition InGaN

    SciTech Connect

    Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard

    2013-04-01

    We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

  16. A comparative investigation on sub-micrometer InN and GaN Gunn diodes working at terahertz frequency

    NASA Astrophysics Data System (ADS)

    Yang, Lin'an; Long, Shuang; Guo, Xin; Hao, Yue

    2012-05-01

    We report on a simulation for wurtzite-InN and GaN Gunn diodes with notch-doping and uniform-doping structural transit regions. Results show that 0.3-1.0 μm Gunn diodes with a diode area of 500 μm2 can generate fundamental frequencies of around 0.2-0.8 THz and rf currents of several hundred mA. InN diodes exhibit more stable oscillations, whereas GaN diodes generate higher oscillation frequencies at both dipole-domain mode and accumulation-domain mode due to different negative differential resistance (NDR) characteristics of high-field transport. The sharp NDR region of InN makes it more suitable for short transit region Gunn diode. Higher Irf/Iav and lower bias voltage in InN Gunn diode imply its conversion efficiency significantly higher than GaN diode.

  17. Valence band offset of MgO /InN heterojunction measured by x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Zhang, P. F.; Liu, X. L.; Zhang, R. Q.; Fan, H. B.; Song, H. P.; Wei, H. Y.; Jiao, C. M.; Yang, S. Y.; Zhu, Q. S.; Wang, Z. G.

    2008-01-01

    MgO may be a promising gate dielectric and surface passivation film for InN based devices and the valence band offset of MgO /InN heterojunction has been measured by x-ray photoelectron spectroscopy. The valence band offset is determined to be 1.59±0.23eV. Given the experimental band gap of 7.83 for the MgO, a type-I heterojunction with a conduction band offset of 5.54±0.23eV is found. The accurate determination of the valence and conduction band offsets is important for use of MgO /InN electronic devices.

  18. From Amateur Astronomer to Observatory Director: The Curious Case of R. T. A. Innes

    NASA Astrophysics Data System (ADS)

    Orchiston, Wayne

    Robert Innes was one of a select band of amateur astronomers who made the transition to professional ranks towards the end of the nineteenth century. Initially he had a passion for mathematical astronomy, but after settling in Sydney he developed a taste for observational astronomy, specialising in the search for new double stars. He quickly became known for his success in this field and for his publications on solar system perturbations, and with John Tebbutt's patronage managed to secure a clerical position at the Royal Observatory, Cape of Good Hope. Once there he continued to observe in his spare time and to publish, and, with strong support from Sir David Gill, was appointed founding Director of the Transvaal Observatory. By the time he died in 1933, Innes had received an honorary D.Sc. from Leiden University, and had established an international reputation as a positional astronomer. This paper provides an interesting case study of a well-known `amateur-turned-professional', and an example of the ways in which patronage played a key role in nineteenth and early twentieth century Australian and South African astronomy.

  19. Planar n +-in-n silicon pixel sensors for the ATLAS IBL upgrade

    NASA Astrophysics Data System (ADS)

    Goessling, C.; Klingenberg, R.; Muenstermann, D.; Rummler, A.; Troska, G.; Wittig, T.

    2011-09-01

    The ATLAS experiment at the LHC is planning to upgrade its pixel detector by the installation of a 4th pixel layer, the insertable b-layer IBL with a mean sensor radius of only 32 mm from the beam axis. Being very close to the beam, the radiation damage of the IBL sensors might be as high as 5×10 15 n eq cm -2 at their end-of-life. To investigate the radiation hardness and suitability of the current ATLAS pixel sensors for IBL fluences, n +-in-n silicon pixel sensors from the ATLAS Pixel production have been irradiated by reactor neutrons to the IBL design fluence and been tested with pions at the SPS and with electrons from a 90Sr source in the laboratory. The collected charge was found to exceed 10 000 electrons per MIP at 1 kV of bias voltage which is in agreement with data collected with strip sensors. With an expected threshold of 3000-4000 electrons, this result suggests that planar n +-in-n pixel sensors are radiation hard enough to be used as IBL sensor technology.

  20. Growth kinetics and island evolution during double-pulsed molecular beam epitaxy of InN

    SciTech Connect

    Kraus, A.; Hein, C.; Bremers, H.; Rossow, U.; Hangleiter, A.

    2016-06-21

    The kinetic processes of InN growth using alternating source fluxes with sub-monolayer In pulses in plasma-assisted molecular beam epitaxy have been investigated. Growth at various temperatures reveals the existence of two growth regimes. While growth at low temperatures is solely governed by surface diffusion, a combination of decomposition, desorption, and diffusion becomes decisive at growth temperatures of 470 °C and above. At this critical temperature, the surface morphology changes from a grainy structure to a structure made of huge islands. The formation of those islands is attributed to the development of an indium adlayer, which can be observed via reflection high energy electron diffraction monitoring. Based on the growth experiments conducted at temperatures below T{sub Growth} = 470 °C, an activation energy for diffusion of 0.54 ± 0.02 eV has been determined from the decreasing InN island density. A comparison between growth on metalorganic vapor phase epitaxy GaN templates and pseudo bulk GaN indicates that step edges and dislocations are favorable nucleation sites. Based on the results, we developed a growth model, which describes the main mechanisms of the growth.

  1. Growth of wurtzite InN on bulk In{sub 2}O{sub 3}(111) wafers

    SciTech Connect

    Sadofev, Sergey; Cho, Yong Jin; Brandt, Oliver; Ramsteiner, Manfred; Calarco, Raffaella; Riechert, Henning; Erwin, Steven C.; Galazka, Zbigniew; Korytov, Maxym; Albrecht, Martin; Uecker, Reinhard; Fornari, Roberto

    2012-10-22

    A single phase InN epitaxial film is grown on a bulk In{sub 2}O{sub 3}(111) wafer by plasma-assisted molecular beam epitaxy. The InN/In{sub 2}O{sub 3} orientation relationship is found to be (0001) parallel (111) and [1100] parallel [112]. High quality of the layer is confirmed by the small widths of the x-ray rocking curves, the sharp interfaces revealed by transmission electron microscopy, the narrow spectral width of the Raman E{sub 2}{sup h} vibrational mode, and the position of the photoluminescence band close to the fundamental band gap of InN.

  2. Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

    SciTech Connect

    Jing, Qiang; Wu, Guoguang; Zhang, Yuantao; Gao, Fubin; Cai, Xupu; Zhao, Yang; Li, Wancheng Du, Guotong

    2014-08-11

    The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be −0.10 ± 0.23 eV and the conduction band offset is deduced to be −2.47 ± 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices.

  3. A Dance Class, a Drag King, & the Pedagogical Possibilities of Performative Hip-Hop: An Interview with Carmen Morrison & Alex U. Inn

    ERIC Educational Resources Information Center

    Schönfeldt-Aultman, Scott M.; Morrison, Carmen

    2015-01-01

    Alex U. Inn is the co-founder and one of the two MCs of the hip-hop drag king group, Momma's Boyz. Momma's Boyz celebrated their tenth anniversary in 2014. Carmen Morrison is the offstage name of Alex U. Inn, though "Carmen" now goes by Alex offstage, as well. Within this interview, the names "Carmen" and "Alex" are…

  4. Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms.

    PubMed

    Gao, Fangliang; Wen, Lei; Xu, Zhenzhu; Han, Jinglei; Yu, Yuefeng; Zhang, Shuguang; Li, Guoqiang

    2017-04-06

    The effects of the growth parameters on the uniformity and the aspect ratio of InN nanowires grown on Si(111) substrates have been studied systematically, and a modified quasi-equilibrium model is proposed. The growth temperature is of great importance for both the nucleation of the nanowires and the migration of In and N atoms, thus affecting the uniformity of the InN nanowires. In order to improve the uniformity of the InN nanowires, both traditional substrate nitridation and pre-In-droplet deposition have been implemented. It is found that the substrate nitridation is favorable for the nucleation of InN nanowires. However, the initial In atoms adhered to the substrate are insufficient to sustain the uniform growth of the InN nanowires. We have found that the initial In droplet on the substrate is not only advantageous for the nucleation of the InN nanowire, but also favorable for the In atom equilibrium between the initial In droplets and the direct In flux. Therefore, InN nanowires with a uniform aspect ratio and optimal diameter can be achieved. The results reported herein provide meaningful insights to understanding the growth kinetics during the InN nanowires growth, and open up great possibilities of developing high-performance group III-nitride-based devices.

  5. A Dance Class, a Drag King, & the Pedagogical Possibilities of Performative Hip-Hop: An Interview with Carmen Morrison & Alex U. Inn

    ERIC Educational Resources Information Center

    Schönfeldt-Aultman, Scott M.; Morrison, Carmen

    2015-01-01

    Alex U. Inn is the co-founder and one of the two MCs of the hip-hop drag king group, Momma's Boyz. Momma's Boyz celebrated their tenth anniversary in 2014. Carmen Morrison is the offstage name of Alex U. Inn, though "Carmen" now goes by Alex offstage, as well. Within this interview, the names "Carmen" and "Alex" are…

  6. Periodic supply of indium as surfactant for N-polar InN growth by plasma-assisted molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Yao, Yong-Zhao; Sekiguchi, Takashi; Ohgaki, Takeshi; Adachi, Yutaka; Ohashi, Naoki; Okuno, Hanako; Takeguchi, Masaki

    2009-07-01

    We have investigated the self-surfactant effect of In for N-polar InN growth by plasma-assisted molecular-beam epitaxy. We found that InN quality was significantly improved if a thin In coverage (about 1.8 ML) was introduced before InN growth. However, this In coverage was slowly consumed during subsequent InN growth under N-rich condition. Periodically restoring In coverage for thick InN growth was proposed to solve this consumption problem. We suggest that the effect of In surfactant is to terminate the surface N dangling bonds and form an In adlayer, under which an efficient diffusion channel for lateral N adatom transport is created.

  7. Initial exploration of growth of InN by electrochemical solution growth.

    SciTech Connect

    Waldrip, Karen Elizabeth

    2010-02-01

    This report summarizes a brief and unsuccessful attempt to grow indium nitride via the electrochemical solution growth method and a modification thereof. Described in this report is a brief effort using a $50,000 LDRD award to explore the possibilities of applying the Electrochemical Solution Growth (ESG) technique to the growth of indium nitride (InN). The ability to grow bulk InN would be exciting from a scientific perspective, and a commercial incentive lies in the potential of extending the ESG technique to grow homogeneous, bulk alloys of In{sub x}Ga{sub 1-x}N for light emitting diodes (LEDs) operating in the green region of the spectrum. Indium nitride is the most difficult of the III-nitrides to grow due to its very high equilibrium vapor pressure of nitrogen1. It is several orders of magnitude higher than for gallium nitride or aluminum nitride. InN has a bandgap energy of 0.7eV, and achieving its growth in bulk for large area, high quality substrates would permit the fabrication of LEDs operating in the infrared. By alloying with GaN and AlN, the bulk material used as substrates would enable high efficiency emission wavelengths that could be tailored all the way through the deep ultraviolet. In addition, InN has been shown to have very high electronic mobilities (2700 cm{sup 2}/V s), making it a promising material for transistors and even terahertz emitters. Several attempts at synthesizing InN have been made by several groups. It was shown that metallic indium does not interact with unactivated nitrogen even at very high temperatures. Thus sets up an incompatibility between the precursors in all growth methods: a tradeoff between thermally activating the nitrogen-containing precursor and the low decomposition temperature of solid InN. We have been working to develop a novel growth technique that circumvents the difficulties of other bulk growth techniques by precipitating the column III nitrides from a solvent, such as a molten chloride salt, that

  8. MBE Growth of InN/GaN(0001) and Shape Transitions of InN islands

    NASA Astrophysics Data System (ADS)

    Cao, Yongge; Xie, Maohai; Liu, Ying; Ng, Y. F.

    2003-03-01

    Plasma-assisted molecular-beam epitaxial growth of InN on GaN(0001) is investigated. Both layer-by-layer and Stranski-Krastanov (SK) growth modes are observed under different growth windows. Strain relaxation is studied by real-time recording of the in-plane lattice spacing evolutions on RHEED pattern, which suggest a gradual relaxation of the strain in InN film commenced during the first bilayer (BL) deposition and almost completed after 2-4 BLs. For SK growth, 3D islanding initiates after the strain has mostly been relieved, presumably by dislocations. Based on statistical analysis, the shape transitions of 3D islands are firstly observed in the III-nitrides system. The InN islands transform gradually from pyramids to platelets with increasing of In flux. Under In-rich growth condition, the reverse trend of island shape evolution dependence on volume size, compared with Equilibrium Crystal Shape (ECS) theory, is induced by the Indium self-surfactant effects, in which Indium adlayer on the top surface of InN islands will depress the thermodynamic driving force for the vertical growth of 3D islands. Lateral growth of 3D islands is not only the result of kinetic process but also favored by thermodynamics while Indium self-surfactant exist.

  9. Formation of polar InN with surface Fermi level near the valence band maximum by means of ammonia nitridation

    NASA Astrophysics Data System (ADS)

    Dahl, J.; Kuzmin, M.; Adell, J.; Balasubramanian, T.; Laukkanen, P.

    2012-12-01

    Development of InN films for devices is hindered due to metallic In clusters, formed readily during growth, and unintentional n-type conductivity of the nominally undoped films, including surface electron-accumulation layers via the Fermi level pinning into the conduction band. Plasma nitridation eliminates even large In clusters from the surface by changing them to two-dimensional InN [Yamaguchi and Nanishi, Appl. Phys. Expr.10.1143/APEX.2.051001 2, 051001 (2009)]. Here we utilized a similar approach, that is, nitridation of In-covered surfaces with ammonia (NH3) to grow thin, up to 25 nm thick polar InN films on Si(111) and GaN(0001) substrates. By means of scanning tunneling microscopy and spectroscopy, as well as photoelectron spectroscopy, we show that this simple NH3 nitridation provides the hitherto not reported formation of polar InN(000-1) films with the surface Fermi level close to the valence band maximum, as recent calculations [Belabbes , Phys. Rev. B10.1103/PhysRevB.84.205304 84, 205304 (2011)] predict.

  10. Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

    NASA Astrophysics Data System (ADS)

    Kurşungöz, Canan; Uzcengiz Şimşek, Elif; Tuzaklı, Refik; Ortaç, Bülend

    2017-03-01

    Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension.

  11. Site-controlled crystalline InN growth from the V-pits of a GaN substrate

    NASA Astrophysics Data System (ADS)

    Kuo, Chien-Ting; Hsu, Lung-Hsing; Lai, Yung-Yu; Cheng, Shan-Yun; Kuo, Hao-Chung; Lin, Chien-Chung; Cheng, Yuh-Jen

    2017-05-01

    A site-controlled crystalline InN growth from the V-pits of a GaN substrate was investigated. The V- pits were fabricated by epitaxial lateral growth of GaN over SiO2 disks patterned on a sapphire substrate. InN crystals were found to preferably grow on the inclined {10-11} crystal planes of the V-pits. A V-pit size of 1 μm or less can provide precise site-controlled InN nucleation at the V-pit bottom, while no InN was grown on the rest of the exposed GaN surfaces. The site-controlled nucleation is attributed to the low surface energy point created by the converging six {10-11} crystal facets at the V-pit bottom. When In source supply is below a certain value, this V-pit bottom is the only location able to aggregate enough active sources to start nucleation, thereby providing site-controlled crystal growth.

  12. Elimination of surface band bending on N-polar InN with thin GaN capping

    SciTech Connect

    Kuzmík, J. Haščík, Š.; Kučera, M.; Kúdela, R.; Dobročka, E.; Adikimenakis, A.; Mičušík, M.; Gregor, M.; Plecenik, A.; Georgakilas, A.

    2015-11-09

    0.5–1 μm thick InN (0001) films grown by molecular-beam epitaxy with N- or In-polarity are investigated for the presence of native oxide, surface energy band bending, and effects introduced by 2 to 4 monolayers of GaN capping. Ex situ angle-resolved x-ray photo-electron spectroscopy is used to construct near-surface (GaN)/InN energy profiles, which is combined with deconvolution of In3d signal to trace the presence of InN native oxide for different types of polarity and capping. Downwards surface energy band bending was observed on bare samples with native oxide, regardless of the polarity. It was found that the In-polar InN surface is most readily oxidized, however, with only slightly less band bending if compared with the N-polar sample. On the other hand, InN surface oxidation was effectively mitigated by GaN capping. Still, as confirmed by ultra-violet photo-electron spectroscopy and by energy band diagram calculations, thin GaN cap layer may provide negative piezoelectric polarization charge at the GaN/InN hetero-interface of the N-polar sample, in addition to the passivation effect. These effects raised the band diagram up by about 0.65 eV, reaching a flat-band profile.

  13. Giant Reduction of InN Surface Electron Accumulation: Compensation of Surface Donors by Mg Dopants

    NASA Astrophysics Data System (ADS)

    Linhart, W. M.; Chai, J.; Morris, R. J. H.; Dowsett, M. G.; McConville, C. F.; Durbin, S. M.; Veal, T. D.

    2012-12-01

    Extreme electron accumulation with sheet density greater than 1013cm-2 is almost universally present at the surface of indium nitride (InN). Here, x-ray photoemission spectroscopy and secondary ion mass spectrometry are used to show that the surface Fermi level decreases as the Mg concentration increases, with the sheet electron density falling to below 108cm-2. Surface space-charge calculations indicate that the lowering of the surface Fermi level increases the density of unoccupied donor-type surface states and that these are largely compensated by Mg acceptors in the near-surface hole depletion region rather than by accumulated electrons. This is a significant step towards the realization of InN-based optoelectronic devices.

  14. Tunable surface electron spin splitting with electric double-layer transistors based on InN.

    PubMed

    Yin, Chunming; Yuan, Hongtao; Wang, Xinqiang; Liu, Shitao; Zhang, Shan; Tang, Ning; Xu, Fujun; Chen, Zhuoyu; Shimotani, Hidekazu; Iwasa, Yoshihiro; Chen, Yonghai; Ge, Weikun; Shen, Bo

    2013-05-08

    Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.

  15. Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure InN Compact Layer

    NASA Astrophysics Data System (ADS)

    Chen, Cheng-Chiang; Chen, Lung-Chien; Kuo, Shu-Jung

    2013-05-01

    This study presents a dye-sensitized solar cells (DSSCs) with a nanostructured InN compact layer (InN-CPL). The effect of a nanostructured InN-CPL in a DSSC structure prepared by radio frequency magnetron sputtering was examined. The InN-CPL effectively reduces the back reaction at the interface between the indium tin oxide (ITO) transparent conductive film and the electrolyte in the DSSC. DSSCs fabricated on ITO/InN-CPL/TiO2/D719 exhibited a short-circuit current density (JSC), open-circuit voltage (VOC), and power conversion efficiency (η) of 23.2 mA/cm2, 0.7 V, and 8.9%, respectively.

  16. Electron Accumulation Layers in InN Nanocolumns Studied by Raman Scattering

    SciTech Connect

    Gallardo, E.; Lazic, S.; Calleja, J. M.; Agullo-Rueda, F.; Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E.

    2010-01-04

    Inelastic light scattering measurements on single crystal InN nanocolumns grown by plasma-assisted molecular beam epitaxy on both Si(001) and Si(111) substrates reveal the existence of a surface electron accumulation layer in the lateral non-polar sidewalls of the nanocolumns. Small and reversible electron density variations of this surface layer has been induced by chemical treatments of the nanocolumns, which can be accurately determined from the frequency of the LO phonon-plasmon coupled mode L{sub -}. The L{sub -} to E{sub 1}(LO) phonon intensity ratio dependence on the column diameter and the excitation wavelength is interpreted in terms of the inhomogeneous electron distribution in the nanocolumns volume and the presence of strong elastic light scattering by the nanocolumns. The TO modes fail to obey conventional selection rules, a fact that is also observed in GaN nanocolumns.

  17. Optical properties of InN with stoichoimetry violation and indium clustering

    NASA Astrophysics Data System (ADS)

    Shubina, T. V.; Ivanov, S. V.; Jmerik, V. N.; Glazov, M. M.; Kalvarskii, A. P.; Tkachman, M. G.; Vasson, A.; Leymarie, J.; Kavokin, A.; Amano, H.; Akasaki, I.; Butcher, K. S. A.; Guo, Q.; Monemar, B.; Kop'ev, P. S.

    2005-02-01

    We demonstrate that nonstoichiometry is one of the main reason of strong deviation of the InN optical gap in the 0.7-2 eV range, with N/In < 1 and N/In > 1 corresponding to the lower and higher energies, respectively. The phenomenon is discussed in terms of atomic orbital energies, which are strongly different for indium and nitrogen, therefore both excess atom incorporation and elimination could change the optical gap. We estimate such trends using the approximation of the empirical nearest-neighbor tight binding theory. It is also demonstrated that resonant absorption in In-enriched regions is an additional factor lowering an effective absorption edge.

  18. Strain Relief Analysis of InN Quantum Dots Grown on GaN

    PubMed Central

    2007-01-01

    We present a study by transmission electron microscopy (TEM) of the strain state of individual InN quantum dots (QDs) grown on GaN substrates. Moiré fringe and high resolution TEM analyses showed that the QDs are almost fully relaxed due to the generation of a 60° misfit dislocation network at the InN/GaN interface. By applying the Geometric Phase Algorithm to plan-view high-resolution micrographs, we show that this network consists of three essentially non-interacting sets of misfit dislocations lying along the directions. Close to the edge of the QD, the dislocations curve to meet the surface and form a network of threading dislocations surrounding the system. PMID:21794190

  19. Solar hot water system installed at Quality Inn, Key West, Florida

    NASA Astrophysics Data System (ADS)

    1980-04-01

    The solar energy hot water system installed in the Quality Inn, Key West, Florida, which consists of four buildings is described. Three buildings are low-rise, two-story buildings containing 100 rooms. The fourth is a four-story building with 48 rooms. The solar system was designed to provide approximately 50 percent of the energy required for the domestic hot water system. The solar system consists of approximately 1400 square feet of flat plate collector, two 500 gallon storage tanks, a circulating pump, and a controller. Operation of the system was begun in April 1978, and has continued to date with only three minor interruptions for pump repair. In the first year of operation, it was determined that the use of the solar facility resulted in forty percent fuel savings.

  20. Solar hot water system installed at Quality Inn, Key West, Florida

    NASA Technical Reports Server (NTRS)

    1980-01-01

    The solar energy hot water system installed in the Quality Inn, Key West, Florida, which consists of four buildings is described. Three buildings are low-rise, two-story buildings containing 100 rooms. The fourth is a four-story building with 48 rooms. The solar system was designed to provide approximately 50 percent of the energy required for the domestic hot water system. The solar system consists of approximately 1400 square feet of flat plate collector, two 500 gallon storage tanks, a circulating pump, and a controller. Operation of the system was begun in April 1978, and has continued to date with only three minor interruptions for pump repair. In the first year of operation, it was determined that the use of the solar facility resulted in forty percent fuel savings.

  1. Solar hot water system installed at Quality Inn, Key West, Florida. Final report

    SciTech Connect

    Not Available

    1980-04-01

    The solar energy hot water system installed in the Quality Inn, Key West, Florida, which consists of four buildings, is described. Three buildings are low-rise, two-story buildings containing 100 rooms. The fourth is a four-story building with 48 rooms. The solar system was designed to provide approximately 50% of the energy required for the domestic hot water system. The solar system consists of approximately 1400 ft/sup 2/ of flat plate collector, two 500 gal storage tanks, a circulating pump, and a controller. Operation of the system was begun in April 1978, and has continued to date with only three minor interruptions for pump repair. In the first year of operation, it was determined that the use of the solar facility resulted in 40% fuel savings.

  2. Temperature dependences of the contact resistivity in ohmic contacts to n{sup +}-InN

    SciTech Connect

    Sachenko, A. V.; Belyaev, A. E.; Boltovets, N. S.; Brunkov, P. N.; Jmerik, V. N.; Ivanov, S. V.; Kapitanchuk, L. M.; Konakova, R. V. Klad’ko, V. P.; Romanets, P. N.; Saja, P. O.; Safryuk, N. V.; Sheremet, V. N.

    2015-04-15

    The temperature dependences of the contact resistivity (ρ{sub c}) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 10{sup 18} cm{sup −3} in the temperature range of 4.2–300 K. At temperatures T > 150 K, linearly increasing dependences ρ{sub c}(T) are obtained. The dependences are explained within the mechanism of thermionic current flow through metal shunts associated with dislocations. Good agreement between theoretical and experimental dependences is achieved assuming that the flowing current is limited by the total resistance of the metal shunts, and the density of conductive dislocations is ∼5 × 10{sup 9} cm{sup −2}. Using the X-ray diffraction method, the density of screw and edge dislocations in the structure under study is measured: their total density exceeds 10{sup 10} cm{sup −2}.

  3. Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

    NASA Astrophysics Data System (ADS)

    Segura-Ruiz, J.; Garro, N.; Cantarero, A.; Denker, C.; Malindretos, J.; Rizzi, A.

    2009-03-01

    Vertically self-aligned InN nanocolumns have been investigated by means of scanning electron microscopy, Raman scattering, and photoluminescence spectroscopy. Different nanocolumn morphologies corresponding to different molecular beam epitaxy growth conditions have been studied. Raman spectra revealed strain-free nanocolumns with high crystalline quality for the full set of samples studied. Longitudinal optical modes both uncoupled and coupled to an electron plasma coexist in the Raman spectra pointing to the existence of two distinctive regions in the nanocolumn: a surface layer of degenerated electrons and a nondegenerated inner core. The characteristics of the low-temperature photoluminescence and its dependence on temperature and excitation power can be explained by a model considering localized holes recombining with degenerated electrons close to the nonpolar surface. The differences observed in the optical response of different samples showing similar crystalline quality have been attributed to the variation in the electron accumulation layer with the growth conditions.

  4. Angular-dependent Raman study of a- and s-plane InN

    NASA Astrophysics Data System (ADS)

    Filintoglou, K.; Katsikini, M.; Arvanitidis, J.; Christofilos, D.; Lotsari, A.; Dimitrakopulos, G. P.; Vouroutzis, N.; Ajagunna, A. O.; Georgakilas, A.; Zoumakis, N.; Kourouklis, G. A.; Ves, S.

    2015-02-01

    Angular-dependent polarized Raman spectroscopy was utilized to study nonpolar a-plane ( 1 1 ¯ 20 ) and semipolar s-plane ( 10 1 ¯ 1 ) InN epilayers. The intensity dependence of the Raman peaks assigned to the vibrational modes A1(TO), E1(TO), and E2 h on the angle ψ that corresponds to rotation around the growth axis, is very well reproduced by using expressions taking into account the corresponding Raman tensors and the experimental geometry, providing thus a reliable technique towards assessing the sample quality. The s- and a-plane InN epilayers grown on nitridated r-plane sapphire (Al2O3) exhibit good crystalline quality as deduced from the excellent fitting of the experimental angle-dependent peak intensities to the theoretical expressions as well as from the small width of the Raman peaks. On the contrary, in the case of the s-plane epilayer grown on non-nitridated r-plane sapphire, fitting of the angular dependence is much worse and can be modeled only by considering the presence of two structural modifications, rotated so as their c-axes are almost perpendicular to each other. Although the presence of the second variant is verified by transmission electron and atomic force microscopies, angular dependent Raman spectroscopy offers a non-destructive and quick way for its quantification. Rapid thermal annealing of this sample did not affect the angular dependence of the peak intensities. The shift of the E1(TO) and E2 h Raman peaks was used for the estimation of the strain state of the samples.

  5. Angular-dependent Raman study of a- and s-plane InN

    SciTech Connect

    Filintoglou, K.; Katsikini, M. Arvanitidis, J.; Lotsari, A.; Dimitrakopulos, G. P.; Vouroutzis, N.; Ves, S.; Christofilos, D.; Kourouklis, G. A.; Ajagunna, A. O.; Georgakilas, A.; Zoumakis, N.

    2015-02-21

    Angular-dependent polarized Raman spectroscopy was utilized to study nonpolar a-plane (11{sup ¯}20) and semipolar s-plane (101{sup ¯}1) InN epilayers. The intensity dependence of the Raman peaks assigned to the vibrational modes A{sub 1}(TO), E{sub 1}(TO), and E{sub 2}{sup h} on the angle ψ that corresponds to rotation around the growth axis, is very well reproduced by using expressions taking into account the corresponding Raman tensors and the experimental geometry, providing thus a reliable technique towards assessing the sample quality. The s- and a-plane InN epilayers grown on nitridated r-plane sapphire (Al{sub 2}O{sub 3}) exhibit good crystalline quality as deduced from the excellent fitting of the experimental angle-dependent peak intensities to the theoretical expressions as well as from the small width of the Raman peaks. On the contrary, in the case of the s-plane epilayer grown on non-nitridated r-plane sapphire, fitting of the angular dependence is much worse and can be modeled only by considering the presence of two structural modifications, rotated so as their c-axes are almost perpendicular to each other. Although the presence of the second variant is verified by transmission electron and atomic force microscopies, angular dependent Raman spectroscopy offers a non-destructive and quick way for its quantification. Rapid thermal annealing of this sample did not affect the angular dependence of the peak intensities. The shift of the E{sub 1}(TO) and E{sub 2}{sup h} Raman peaks was used for the estimation of the strain state of the samples.

  6. Influence of hydrogen input partial pressure on the polarity of InN on GaAs (1 1 1)A grown by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Murakami, Hisashi; Eriguchi, Ken-ichi; Torii, Jun-ichi; Cho, Hyun-Chol; Kumagai, Yoshinao; Koukitu, Akinori

    2008-04-01

    Influences of hydrogen input partial pressure in the carrier gas ( F=PHo/(PHo+PNo)) on the crystalline quality and polarities of InN on GaAs (1 1 1)A surfaces were investigated by metalorganic vapor phase epitaxy (MOVPE). It was found that the polarity of the InN was affected by the hydrogen gas in the system regardless of the polarity of GaAs starting substrate. The polarity of InN layer grown with the hydrogen partial pressure of Fo=0.004 was a mixture of In-polarity and N-polarity, while that grown with Fo=0 was In-polarity. Degradation of the crystalline quality of InN grown with Fo=0.004 occurred due to the polarity inversion during the growth. The reason why the polarity of InN was influenced by the hydrogen carrier gas could be explained by the preferential growth of N-polarity InN in the H 2 contained ambient and/or the limiting reaction of InN decomposition.

  7. Role of Inn1 and its interactions with Hof1 and Cyk3 in promoting cleavage furrow and septum formation in S. cerevisiae.

    PubMed

    Nishihama, Ryuichi; Schreiter, Jennifer H; Onishi, Masayuki; Vallen, Elizabeth A; Hanna, Julia; Moravcevic, Katarina; Lippincott, Margaret F; Han, Haesun; Lemmon, Mark A; Pringle, John R; Bi, Erfei

    2009-06-15

    Cytokinesis requires coordination of actomyosin ring (AMR) contraction with rearrangements of the plasma membrane and extracellular matrix. In Saccharomyces cerevisiae, new membrane, the chitin synthase Chs2 (which forms the primary septum [PS]), and the protein Inn1 are all delivered to the division site upon mitotic exit even when the AMR is absent. Inn1 is essential for PS formation but not for Chs2 localization. The Inn1 C-terminal region is necessary for localization, and distinct PXXP motifs in this region mediate functionally important interactions with SH3 domains in the cytokinesis proteins Hof1 (an F-BAR protein) and Cyk3 (whose overexpression can restore PS formation in inn1Delta cells). The Inn1 N terminus resembles C2 domains but does not appear to bind phospholipids; nonetheless, when overexpressed or fused to Hof1, it can provide Inn1 function even in the absence of the AMR. Thus, Inn1 and Cyk3 appear to cooperate in activating Chs2 for PS formation, which allows coordination of AMR contraction with ingression of the cleavage furrow.

  8. Structural properties of InN films grown on O-face ZnO(0001) by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Cho, Yong Jin; Brandt, Oliver; Kaganer, Vladimir M.; Ramsteiner, Manfred; Riechert, Henning; Korytov, Maxim; Albrecht, Martin

    2012-04-09

    We study the impact of substrate temperature and layer thickness on the morphological and structural properties of InN films directly grown on O-face ZnO(0001) substrates by plasma-assisted molecular beam epitaxy. With increasing substrate temperature, an interfacial reaction between InN and ZnO takes place that eventually results in the formation of cubic In{sub 2}O{sub 3} and voids. The properties of the InN films, however, are found to be unaffected by this reaction for substrate temperatures less than 550 deg. C. In fact, both the morphological and the structural quality of InN improve with increasing substrate temperature in the range from 350 to 500 deg. C. High quality films with low threading dislocation densities are demonstrated.

  9. Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy

    SciTech Connect

    Kamimura, Jumpei; Kishino, Katsumi; Kikuchi, Akihiko

    2010-10-04

    We investigated the selective-area growth (SAG) of InN by rf-plasma-assisted molecular-beam epitaxy using molybdenum (Mo)-mask-patterned sapphire (0001) substrates, which resulted in the formation of regularly arranged N-polar InN microcrystals. Transmission electron microscopy observation confirmed that the laterally grown side areas were nearly dislocation-free, although many threading dislocations (10{sup 9}-10{sup 10} cm{sup -2}) were generated at the InN/sapphire interface and propagated into the center of the InN microcrystals along the crystal c-axis. The laterally grown InN microcrystals exhibited narrow near-IR emission spectra with a peak photon energy of 0.627 eV and a linewidth of 39 meV at room temperature.

  10. Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of “In+N” coverage and capping timing by GaN layer on effective InN thickness

    SciTech Connect

    Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Itoi, Takaomi

    2016-01-11

    The growth front in the self-organizing and self-limiting epitaxy of ∼1 monolayer (ML)-thick InN wells on/in +c-GaN matrix by molecular beam epitaxy (MBE) has been studied in detail, with special attention given to the behavior and role of the N atoms. The growth temperatures of interest are above 600 °C, far higher than the typical upper critical temperature of 500 °C in MBE. It was confirmed that 2 ML-thick InN wells can be frozen/inserted in GaN matrix at 620 °C, but it was found that N atoms at the growth front tend to selectively re-evaporate more quickly than In atoms at temperatures higher than 650 °C. As a result, the effective thickness of inserted InN wells in the GaN matrix at 660–670 °C were basically 1 ML or sub-ML, even though they were capped by a GaN barrier at the time of 2 ML “In+N” coverage. Furthermore, it was found that the N atoms located below In atoms in the dynamic atomic layer epitaxy growth front had remarkably weaker bonding to the +c-GaN surface.

  11. Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films

    SciTech Connect

    Mohanta, Antaryami; Jang, Der-Jun Wang, Ming-Sung; Tu, L. W.

    2014-01-28

    Temperature and excitation power dependent time-integrated photoluminescence of Si doped InN thin films are investigated. Photoluminescence (PL) spectra at low temperatures are described by single emission peak ensued due to “free-to-bound” recombination; whereas PL spectra at higher temperatures above 150 K are characterized by both “band-to-band” and “free-to-bound” transition. Carrier dynamics of Si doped InN thin films is studied using pump-probe reflection spectroscopy at room temperature. The hot electron cooling process is well described by electron-electron scattering. The dependence of the hot electron cooling rate on total electron density shows sublinear to linear behavior with increase of background electron density. The variation of the carrier recombination lifetime with total electron density implicates the dominance of the defect-related nonradiative recombination channel over other recombination processes.

  12. Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy

    SciTech Connect

    Tangi, Malleswararao; Kuyyalil, Jithesh; Shivaprasad, S. M.

    2012-10-01

    We address the carrier concentration, strain, and bandgap issue of InN films grown on c-sapphire at different N-flux by molecular beam epitaxy using x-ray diffraction and x-ray photoelectron spectroscopy. We demonstrate that the strain in InN films arises due to point defects like nitrogen interstitials and nitrogen antisites. We report minimal biaxial strain due to relaxed growth morphology and a minimal hydrostatic strain arising due to interstitial nitrogen atoms being partially compensated by nitrogen antisites. We find that the variation in absorption edge can be attributed to defect induced carrier concentration and that nitrogen interstitials and nitrogen antisites act as donors that yield the respective absorption edge and Moss-Burstein shift. Our studies are a step towards the ability to form low carrier concentration strain-relaxed films and to determine the intrinsic band gap value for this technologically important material.

  13. Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source

    NASA Astrophysics Data System (ADS)

    Kremzow, Raimund; Pristovsek, Markus; Stellmach, Joachim; Savaş, Özgür; Kneissl, Michael

    2010-06-01

    The growth of InN on GaN/sapphire by metalorganic vapor-phase epitaxy (MOVPE) using tertiary-butylhydrazine (tBHy) was studied by varying temperature, V/III-ratio, growth time and carrier gas between nitrogen and hydrogen. The growth was characterized in-situ by spectroscopic ellipsometry and ex-situ by high resolution X-ray diffraction, atomic force microscopy and scanning electron microscopy. In contrast to ammonia, it was predicted that tBHy should allow InN growth for a much wider growth window and low V/III-ratios with growth temperatures below 600C. However, over a wide range of growth parameters only growth of metallic indium droplets was observed.

  14. Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study

    SciTech Connect

    Acharya, Ananta R. E-mail: anantaach@gmail.com; Thoms, Brian D.; Nepal, Neeraj; Eddy, Charles R.

    2015-03-15

    The surface bonding configuration and kinetics of hydrogen desorption from InN grown by plasma-assisted atomic layer epitaxy have been investigated. High resolution electron energy loss spectra exhibited loss peaks assigned to a Fuchs–Kliewer surface phonon, N-N and N-H surface species. The surface N-N vibrations are attributed to surface defects. The observation of N-H but no In-H surface species suggested N-terminated InN. Isothermal desorption data were best fit by the first-order desorption kinetics with an activation energy of (0.88 ± 0.06) eV and pre-exponential factor of (1.5 ± 0.5) × 10{sup 5 }s{sup −1}.

  15. Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Choi, Soojeong; Wu Feng; Bierwagen, Oliver; Speck, James S.

    2013-05-15

    The authors report on the plasma-assisted molecular beam epitaxy growth and carrier transport of Mg-doped In-face (0001) InN. The 1.2 {mu}m thick InN films were grown on GaN:Fe templates under metal rich conditions with Mg concentration from 1 Multiplication-Sign 10{sup 17}/cm{sup 3} to 3 Multiplication-Sign 10{sup 20}/cm{sup 3}. A morphological transition, associated with the formation of V-shape polarity inversion domains, was observed at Mg concentration over 7 Multiplication-Sign 10{sup 19}/cm{sup 3} by atomic force microscopy and transmission electron microscopy. Seebeck measurements indicated p-type conductivity for Mg-concentrations from 9 Multiplication-Sign 10{sup 17}/cm{sup 3} to 7 Multiplication-Sign 10{sup 19}/cm{sup 3}, i.e., as it exceeded the compensating (unintentional) donor concentration.

  16. R&W Club Frederick Hosts 4th Annual Golf Tournament Benefiting The Children’s Inn at NIH | Poster

    Cancer.gov

    The R&W Club Frederick’s 4th Annual Golf Tournament to benefit the Children’s Inn at NIH teed off on time despite cloudy weather and scattered showers. Employees from NCI at Frederick, the main NIH campus, and Leidos Biomed, along with family and friends, came to enjoy an afternoon at the beautiful Maryland National Golf Club in Middletown and to support a wonderful charity.

  17. R&W Club Frederick Hosts Second Annual Golf Tourney for The Children’s Inn | Poster

    Cancer.gov

    By Carolynne Keenan, Contributing Writer On Sept. 8, more than 40 NCI at Frederick and Leidos Biomedical Research employees, along with family and friends, swapped work clothes for golf gear at Maryland National Golf Club in Middletown. The golfers didn’t just play for fun; they participated in the second annual R&W Club Frederick Golf Tournament to support The Children’s Inn at NIH.

  18. R&W Club Frederick Hosts 4th Annual Golf Tournament Benefiting The Children’s Inn at NIH | Poster

    Cancer.gov

    The R&W Club Frederick’s 4th Annual Golf Tournament to benefit the Children’s Inn at NIH teed off on time despite cloudy weather and scattered showers. Employees from NCI at Frederick, the main NIH campus, and Leidos Biomed, along with family and friends, came to enjoy an afternoon at the beautiful Maryland National Golf Club in Middletown and to support a wonderful charity.

  19. R&W Club Frederick Hosts Second Annual Golf Tourney for The Children’s Inn | Poster

    Cancer.gov

    By Carolynne Keenan, Contributing Writer On Sept. 8, more than 40 NCI at Frederick and Leidos Biomedical Research employees, along with family and friends, swapped work clothes for golf gear at Maryland National Golf Club in Middletown. The golfers didn’t just play for fun; they participated in the second annual R&W Club Frederick Golf Tournament to support The Children’s Inn at NIH.

  20. Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust Schottky Contacts

    NASA Astrophysics Data System (ADS)

    Harotoonian, Vache; Woodall, Jerry M.

    2016-12-01

    High-quality, single crystal wurtzite InN films were fabricated by radio-frequency magnetron reactive sputtering on GaN templates. The sputtered InN films in this study were about 100 nm thick. Atomic force microscopy analysis revealed the sputtered InN film had root-mean-square surface roughness of about 0.4 nm, which is comparable to the underlying GaN template. Coupled x-ray diffraction (XRD) measurements confirmed the (0001) preferred growth orientation and ω-rocking curve full-width-half-maximum (FWHM) = 0.85° for the symmetrical (0002) diffraction peak. The present InN film has the best crystal quality in terms of narrower FWHM of XRD rocking curve among reported sputtered InN thin films. In-plane and out-of-plane XRD measurements revealed a relaxed film. Room temperature Hall Effect measurements showed mobility of 110 cm2/V.s and electron concentration of 1-2 × 1020/cm3. The feasibility of utilizing a cost effective and productive method of sputtering to form robust Schottky contacts to GaN using InN, an immiscible and metallic-like semiconductor, was explored.

  1. Current transport in W and WSI{sub x} ohmic contacts to InGaN and InN

    SciTech Connect

    Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.

    1997-10-01

    The temperature dependence of the specific contact resistance of W and WSi{sub 0.44} contacts on n{sup +} In{sub 0.65}Ga{sub 0.35}N and InN was measured in the range -50 {degrees}C to 125 {degrees}C. The results were compared to theoretical values for different conduction mechanisms, to further elucidate the conduction mechanism in these contact schemes for all but as-deposited metal to InN where thermionic emission appears to be the dominant mechanism. The contacts were found to produce low specific resistance ohmic contacts to InGaN at room temperature, e{sup c} {approximately} 10{sup -7} {Omega} {center_dot} cm{sup 2} for W and e{sub c} of 4x 10{sup -7} {Omega} {center_dot} cm{sup 2} for WSi{sub x}. InN metallized with W produced ohmic contacts with e{sub c} {approximately} 10{sup -7} {Omega} {center_dot} cm{sup 2} and e{sub c} {approximately} 10{sup -6} {Omega} {center_dot} cm{sup 2} for WSi{sub x} at room temperature.

  2. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

    NASA Astrophysics Data System (ADS)

    Monteagudo-Lerma, L.; Valdueza-Felip, S.; Núñez-Cascajero, A.; Ruiz, A.; González-Herráez, M.; Monroy, E.; Naranjo, F. B.

    2016-01-01

    We present the structural and optical properties of (0001)-oriented nanocolumnar films of InN deposited on c-sapphire substrates by radio-frequency reactive sputtering. It is observed that the column density and dimensions are highly dependent on the growth parameters of the buffer layer. We investigate four buffer layers consisting of (i) 30 nm of low-growth-rate InN, (ii) 30 nm of AlN deposited on the unbiased substrate (us), (iii) 30 nm of AlN deposited on the reverse-biased substrate (bs), and (iv) a 60-nm-thick bilayer consisting of 30-nm-thick bs-AlN deposited on top of 30-nm-thick us-AlN. Differences in the layer nucleation process due to the buffer layer induce variations of the column density in the range of (2.5-16)×109 cm-2, and of the column diameter in the range of 87-176 nm. Best results in terms of mosaicity are obtained using the bs-AlN buffer layer, which leads to a full width at half-maximum of the InN(0002) rocking curve of 1.2°. A residual compressive strain is still present in the nanocolumns. All samples exhibit room temperature photoluminescence emission at ~1.6 eV, and an apparent optical band gap at ~1.7 eV estimated from linear optical transmittance measurements.

  3. Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range.

    PubMed

    Winden, A; Mikulics, M; Grützmacher, D; Hardtdegen, H

    2013-10-11

    Important technological steps are discussed and realized for future room-temperature operation of III-nitride single photon emitters. First, the growth technology of positioned single pyramidal InN nanostructures capped by Mg-doped GaN is presented. The optimization of their optical characteristics towards narrowband emission in the telecommunication wavelength range is demonstrated. In addition, a device concept and technology was developed so that the nanostructures became singularly addressable. It was found that the nanopyramids emit in the telecommunication wavelength range if their size is chosen appropriately. A p-GaN contacting layer was successfully produced as a cap to the InN pyramids and the top p-contact was achievable using an intrinsically conductive polymer PEDOT:PSS, allowing a 25% increase in light transmittance compared to standard Ni/Au contact technology. Single nanopyramids were successfully integrated into a high-frequency device layout. These decisive technology steps provide a promising route to electrically driven and room-temperature operating InN based single photon emitters in the telecommunication wavelength range.

  4. Superconductivity of Ca2 InN with a layered structure embedding an anionic indium chain array

    NASA Astrophysics Data System (ADS)

    Jeong, Sehoon; Matsuishi, Satoru; Lee, Kimoon; Toda, Yoshitake; Wng Kim, Sung; Hosono, Hideo

    2014-05-01

    We report the emergence of superconductivity in Ca2InN consisting of a two-dimensional (2D) array of zigzag indium chains embedded between Ca2N layers. A sudden drop of resistivity and a specific heat (Cp) jump attributed to the superconducting transition were observed at 0.6 K. The Sommerfeld coefficient γ = 4.24 mJ mol-1K-2 and Debye temperature ΘD = 322 K were determined from the Cp of the normal conducting state and the superconducting volume fraction was estimated to be ˜80% from the Cp jump, assuming a BCS-type weak coupling. Density functional theory calculations demonstrated that the electronic bands near the Fermi level (EF) are mainly derived from In 5p orbitals with π and σ bonding states and the Fermi surface is composed of cylindrical parts, corresponding to the quasi-2D electronic state of the In-chain array. By integrating the projected density of states of the In-p component up to EF, a valence electron population of ˜1.6 electrons/In was calculated, indicating that partially anionic state of In. The In 3d binding energies observed in Ca2InN by x-ray photoemission spectroscopy were negatively shifted from that in In metal. The superconductivity of Ca2InN is associated with the p-p bonding states of the anionic In layer.

  5. Electrical transport properties of single undoped and n-type doped InN nanowires.

    PubMed

    Richter, T; Lüth, H; Schäpers, Th; Meijers, R; Jeganathan, K; Estévez Hernández, S; Calarco, R; Marso, M

    2009-10-07

    Electrical transport properties of undoped and n-type doped InN nanowires grown by molecular beam epitaxy were studied by current-voltage and back-gate field-effect transistor measurements. The current-voltage characteristics show ohmic behavior in the temperature range between 4 and 300 K. Down to about 120 K a linear decrease in resistance with temperature is observed. The investigation of a large number of nanowires revealed for undoped as well as doped wires an approximately linear relation between the normalized conductance and diameter for wires with a diameter below 100 nm. This shows that the main conduction takes place in the tubular surface accumulation layer of the wires. In contrast, for doped wires with a diameter larger than 100 nm a quadratic dependence of conduction on the diameter was found, which is attributed to bulk conductance as the main contribution. The successful doping of the wires is confirmed by an enhanced conduction and by the results of the back-gate field-effect transistor measurements.

  6. Hole transport and photoluminescence in Mg-doped InN

    SciTech Connect

    Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

    2010-03-24

    Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

  7. Molten salt-based growth of bulk GaN and InN for substrates.

    SciTech Connect

    Waldrip, Karen Elizabeth

    2007-08-01

    An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The novel techniques described herein rely on the production of the nitride precursor (N{sup 3-}) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (February 2006-September 2006) focused on establishing that mass transport of GaN occurs in molten LiCl, the construction of a larger diameter electrochemical cell, the design, modification, and installation of a made-to-order glove box (required for handling very hygroscopic LiCl), and the feasibility of using room temperature molten salts to perform nitride chemistry experiments.

  8. Molten Salt-Based Growth of Bulk GaN and InN for Substrates

    SciTech Connect

    Waldrip, Karen Elizabeth; Tsao, Jeffrey Yeenien; Kerley, Thomas M.

    2006-09-01

    An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The technique described herein relies on the production of the nitride precursor (N3-) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (July 2004-September 2005) focused on the initial measurement of the solubility of GaN in molten LiCl as a function of temperature, the construction of electrochemical cells, the modification of a commercial glove box (required for handling very hygroscopic LiCl), and on securing intellectual property for the technique.

  9. An investigation into the conversion of In2O3 into InN nanowires

    NASA Astrophysics Data System (ADS)

    Papageorgiou, Polina; Zervos, Matthew; Othonos, Andreas

    2011-12-01

    Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding to the body centred cubic crystal structure of In2O3 while the photoluminescence (PL) spectrum at 300 K consisted of two broad peaks, centred around 400 and 550 nm. The post-growth nitridation of In2O3 NWs was systematically investigated by varying the nitridation temperature between 500 and 900°C, flow of NH3 and nitridation times between 1 and 6 h. The NWs are eliminated above 600°C while long nitridation times at 500 and 600°C did not result into the efficient conversion of In2O3 to InN. We find that the nitridation of In2O3 is effective by using NH3 and H2 or a two-step temperature nitridation process using just NH3 and slower ramp rates. We discuss the nitridation mechanism and its effect on the PL.

  10. First principles calculations of structural, electronic and optical properties of InN compound

    NASA Astrophysics Data System (ADS)

    Graine, R.; Chemam, R.; Gasmi, F. Z.; Nouri, R.; Meradji, H.; Khenata, R.

    2015-11-01

    We carried out ab initio calculations of structural, electronic and optical properties of Indium nitride (InN) compound in both zinc blende and wurtzite phases, using the full-potential linearized augmented plane wave method (FP-LAPW), within the framework of density functional theory (DFT). For the exchange and correlation potential, local density approximation (LDA) and generalized gradient approximation (GGA) were used. Moreover, the alternative form of GGA proposed by Engel and Vosko (EV-GGA) and modified Becke-Johnson schemes (mBJ) were also applied for band structure calculations. Ground state properties such as lattice parameter, bulk modulus and its pressure derivative are calculated. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show good agreement with the available data. The calculated band structure shows a direct band gap Γ → Γ. In the optical properties section, several optical quantities are investigated; in particular we have deduced the interband transitions from the imaginary part of the dielectric function.

  11. Evaluation of testing strategies for the radiation tolerant ATLAS n +-in-n pixel sensor

    NASA Astrophysics Data System (ADS)

    Klaiber-Lodewigs, Jonas M.; Atlas Pixel Collaboration

    2003-10-01

    The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m2 with 1.1×10 8 read-out channels usable for a particle fluence up to 10 15 cm-2 ( 1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n +-in-n silicon pixel cell design with a standard cell size of 50×400 μm2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operation in the ATLAS experiment. The specific set of tests discussed in detail measures sensor depletion, interface generation velocity, p-spray dose and biasing by punch-through mechanism and is designed to give insights into effects of irradiation with ionizing particles.

  12. Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 Multiplication-Sign 2 transfer-matrix algebra

    SciTech Connect

    Katsidis, C. C.; Ajagunna, A. O.; Georgakilas, A.

    2013-02-21

    Fourier Transform Infrared (FTIR) reflectance spectroscopy has been implemented as a non-destructive, non-invasive, tool for the optical characterization of a set of c-plane InN single heteroepitaxial layers spanning a wide range of thicknesses (30-2000 nm). The c-plane (0001) InN epilayers were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN(0001) buffer layers which had been grown on Al{sub 2}O{sub 3}(0001) substrates. It is shown that for arbitrary multilayers with homogeneous anisotropic layers having their principal axes coincident with the laboratory coordinates, a 2 Multiplication-Sign 2 matrix algebra based on a general transfer-matrix method (GTMM) is adequate to interpret their optical response. Analysis of optical reflectance in the far and mid infrared spectral range has been found capable to discriminate between the bulk, the surface and interface contributions of free carriers in the InN epilayers revealing the existence of electron accumulation layers with carrier concentrations in mid 10{sup 19} cm{sup -3} at both the InN surface and the InN/GaN interface. The spectra could be fitted with a three-layer model, determining the different electron concentration and mobility values of the bulk and of the surface and the interface electron accumulation layers in the InN films. The variation of these values with increasing InN thickness could be also sensitively detected by the optical measurements. The comparison between the optically determined drift mobility and the Hall mobility of the thickest sample reveals a value of r{sub H} = 1.49 for the Hall factor of InN at a carrier concentration of 1.11 Multiplication-Sign 10{sup 19} cm{sup -3} at 300 Degree-Sign {Kappa}.

  13. risk factor Inn (INNrisk) - transdisciplinary analysis of the 2005 flood in the province of Tyrol, Austria

    NASA Astrophysics Data System (ADS)

    Kleewein, Klaus; Pfurtscheller, Clemens; Borsdorf, Axel

    2010-05-01

    The transdisciplinary project INNrisk, in collaboration with public risk and disaster management, investigates the severe floods of 22nd and 23rd of August, 2005, and their effects within the federal province of Tyrol. The inundation and accompanying processes (e.g. debris flows, log jams, underwashing of infrastructure) caused by the river Inn and its tributaries created a dangerous situation for Tyrol. The overall economic loss of direct assets is said to amount to ca. 500 million Euros. Climate change has basically been causing a statistical increase of damaging floods within the Alpine Space in recent decades while increasing vulnerability at the same time. The expansion of settlements is one factor in the threat to large numbers of people and growing economic losses. However, the disasters of the last decade provide an opportunity for analysing the flood process in terms of natural-science and geographical aspects as well as in terms of economic and statistical ones. This should lead to a better understanding of triggers and effects in those areas where humans are active and form the basis for mitigation and adaptation strategies. The results of such analyses represent valuable information for public risk and disaster management, particularly in presenting the effects on public and private households. The INNrisk project primarily aims to assess the framework conditions in systemic-legal terms and to analyse human actions during the floods in relation to various plans and the damage potentials resulting from them. The assessed losses depend to a great extent on the actions taken during the emergency and on flood operations by the public emergency management and local fire departments, which are in charge of floods and related processes in the case of Austria. Assessment will be carried out by analysing a database of series of human actions for the duration of the emergeny and increased risk. The project also strives to arrive at a macro- and mesoeconomic

  14. Beaulieu-Boycott-Innes syndrome: an intellectual disability syndrome with characteristic facies.

    PubMed

    Casey, Jillian; Jenkinson, Allan; Magee, Alex; Ennis, Sean; Monavari, Ahmad; Green, Andrew; Lynch, Sally A; Crushell, Ellen; Hughes, Joanne

    2016-10-01

    We report a female child from an Irish Traveller family presenting with severe intellectual disability, dysmorphic features, renal anomalies, dental caries and cyclical vomiting. Current health issues include global developmental delay, mild concentric left ventricular hypertrophy, dental malocclusion and caries and a single duplex left kidney. The proband and her mother also have multiple epiphyseal dysplasia. Whole-exome sequencing was performed to identify the underlying genetic cause. DNA from the proband was enriched with the Agilent Sure Select v5 Exon array and sequenced on an Illumina HiSeq. Rare homozygous variants were prioritized. Whole-exome sequencing identified three linked homozygous missense variants in THOC6 (c.298T>A, p.Trp100Arg; c.700G>C, p.Val234Leu; c.824G>A, p.Gly275Asp) as the likely cause of this child's intellectual disability syndrome, resulting in a molecular diagnosis of Beaulieu-Boycott-Innes syndrome (BBIS). This is the first report of BBIS in Europe. BBIS has been reported previously in two Hutterite families and one Saudi family. A review of all patients to date shows a relatively homogenous phenotype. Core clinical features include low birth weight with subsequent growth failure, short stature, intellectual disability with language delay, characteristic facies, renal anomalies and dental malocclusion with caries. Some patients also have cardiac defects. All patients show characteristic dysmorphic facial features including a tall forehead with high anterior hairline and deep-set eyes with upslanting palpebral fissures. The coexistence of intellectual disability together with these characteristic facies should provide a diagnostic clue for BBIS during patient evaluation.

  15. Radiation hardness studies of n + -in-n planar pixel sensors for the ATLAS upgrades

    NASA Astrophysics Data System (ADS)

    Altenheiner, S.; Goessling, C.; Jentzsch, J.; Klingenberg, R.; Muenstermann, D.; Rummler, A.; Troska, G.; Wittig, T.

    2011-12-01

    The ATLAS experiment at the LHC is planning upgrades of its pixel detector to cope with the luminosity increase foreseen in the coming years within the transition from LHC to Super-LHC (SLHC/HL-LHC). Associated with the increase in instantaneous luminosity is a rise of the target integrated luminosity from 730 to about 3000 fb -1 which directly translates into significantly higher radiation damage. These upgrades consist of the installation of a 4th pixel layer, the insertable b-layer IBL, with a mean sensor radius of only 32 mm from the beam axis, before 2016/17. In addition, the complete pixel detector will be exchanged before 2020/21. Being very close to the beam, the radiation damage of the IBL sensors might be as high as 5×1015 neq cm-2 at their end-of-life. The total fluence of the innermost pixel layer after the SLHC upgrade might even reach 2×1016 neq cm-2. To investigate the radiation hardness and suitability of the current ATLAS pixel sensors for these fluences, n +-in-n silicon pixel sensors from the ATLAS Pixel production have been irradiated by reactor neutrons to the IBL design fluence and been tested with pions at the SPS and with electrons from a 90Sr source in the laboratory. The collected charge after IBL fluences was found to exceed 10 000 electrons per MIP at 1 kV of bias voltage which is in agreement with data collected with strip sensors. After SLHC fluences, still reliable operation of the devices could be observed with a collected charge of more than 5000 electrons per MIP.

  16. Direct growth of hexagonal InN films on 6H-SiC by radio-frequency metal-organic molecular-beam epitaxy

    SciTech Connect

    Chen, Wei-Chun; Kuo, Shou-Yi; Hsiao, Chien-Nan; Tsai, Din Ping

    2011-01-15

    Wurtzite InN films were prepared on a 6H-SiC substrate by a self-designed plasma-assisted metal-organic molecular-beam epitaxy system without a buffer layer. In this article, the authors investigate the structural and optical properties of InN films grown on a 6H-SiC substrate. The crystallinity and microstructure of the thin film were further characterized by x-ray diffraction (XRD), field-emission scanning-electron microscopy, and transmission-electron microscopy. Electrical and optical properties were evaluated by Hall and photoluminescence (PL) measurements. XRD results indicate that InN film grown at 500 deg. C is epitaxially grown along the c-axis orientation. The two-dimensional growth mode is clearly shown in scanning-electron microscope images. Room-temperature PL spectra show that the emission peak is located at {approx}0.83 eV due to the Burstein-Moss effect. In addition, the crystalline InN samples crack and peel away from the substrate at elevated growth temperature. This phenomenon may be attributed to lattice mismatch and grain coalescence while increasing the growth temperature. The narrow window of the growth temperature plays an important role in engineering the InN epitaxial growth.

  17. Current conduction mechanism and electrical break-down in InN grown on GaN

    NASA Astrophysics Data System (ADS)

    Kuzmik, J.; Fleury, C.; Adikimenakis, A.; Gregušová, D.; Ťapajna, M.; Dobročka, E.; Haščík, Š.; Kučera, M.; Kúdela, R.; Androulidaki, M.; Pogany, D.; Georgakilas, A.

    2017-06-01

    Current conduction mechanism, including electron mobility, electron drift velocity (vd) and electrical break-down have been investigated in a 0.5 μm-thick (0001) InN layer grown by molecular-beam epitaxy on a GaN/sapphire template. Electron mobility (μ) of 1040 cm2/Vs and a free electron concentration (n) of 2.1 × 1018 cm-3 were measured at room temperature with only a limited change down to 20 K, suggesting scattering on dislocations and ionized impurities. Photoluminescence spectra and high-resolution X-ray diffraction correlated with the Hall experiment showing an emission peak at 0.69 eV, a full-width half-maximum of 30 meV, and a dislocation density Ndis ˜ 5.6 × 1010 cm-2. Current-voltage (I-V) characterization was done in a pulsed (10 ns-width) mode on InN resistors prepared by plasma processing and Ohmic contacts evaporation. Resistors with a different channel length ranging from 4 to 15.8 μm obeyed the Ohm law up to an electric field intensity Eknee ˜ 22 kV/cm, when vd ≥ 2.5 × 105 m/s. For higher E, I-V curves were nonlinear and evolved with time. Light emission with a photon energy > 0.7 eV has been observed already at modest Erad of ˜ 8.3 kV/cm and consequently, a trap-assisted interband tunneling was suggested to play a role. At Eknee ˜ 22 kV/cm, we assumed electron emission from traps, with a positive feed-back for the current enhancement. Catastrophic break-down appeared at E ˜ 25 kV/cm. Reduction of Ndis was suggested to fully exploit InN unique prospects for future high-frequency devices.

  18. Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Kusaba, Akira; Kangawa, Yoshihiro; Kempisty, Pawel; Shiraishi, Kenji; Kakimoto, Koichi; Koukitu, Akinori

    2016-12-01

    We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and (000\\bar{1}) by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces.

  19. Direct immobilization of enzymes in GaN and InN nanocolumns: The urease case study

    NASA Astrophysics Data System (ADS)

    Sofikiti, N.; Chaniotakis, N.; Grandal, J.; Utrera, M.; Sanchez-Garcia, M. A.; Calleja, E.; Iliopoulos, E.; Georgakilas, A.

    2009-09-01

    In this work, the development of potentiometric urea biosensors through the entrapment of urease enzyme within the cavities of nanocolumnar GaN and InN wurtzite semiconductor substrates, is being described. The biosensing capabilities of these materials are compared with biosensors based on the corresponding flat surfaces, in order to check the increased sensitivity and enzyme stabilization properties expected from the nanocolumns. The obtained results proved that the electrochemically active nanocolumns serve both as highly sensitive transducer, as well as stabilizing nanoenvironment within which urease retains its catalytic activity for a prolonged period of time.

  20. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

    2016-12-01

    The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

  1. Reduction of electron accumulation at InN(0001) surfaces via saturation of surface states by potassium and oxygen as donor- or acceptor-type adsorbates

    SciTech Connect

    Eisenhardt, A.; Reiß, S.; Krischok, S. Himmerlich, M.

    2014-01-28

    The influence of selected donor- and acceptor-type adsorbates on the electronic properties of InN(0001) surfaces is investigated implementing in-situ photoelectron spectroscopy. The changes in work function, surface band alignment, and chemical bond configurations are characterized during deposition of potassium and exposure to oxygen. Although an expected opponent charge transfer characteristic is observed with potassium donating its free electron to InN, while dissociated oxygen species extract partial charge from the substrate, a reduction of the surface electron accumulation occurs in both cases. This observation can be explained by adsorbate-induced saturation of free dangling bonds at the InN resulting in the disappearance of surface states, which initially pin the Fermi level and induce downward band bending.

  2. Growth of InN and In rich InGaN by ``High Pressure Chemical Vapor Deposition'' (HPCVD)

    NASA Astrophysics Data System (ADS)

    Buegler, Max; Alevli, Mustafa; Atalay, Ramazan; Durkaya, Goksel; Wang, Jielei; Senevirathna, Indika; Jamil, Muhammad; Ferguson, Ian; Dietz, Nikolaus

    2009-11-01

    We present the growth of III-nitrides under elevated nitrogen pressure to stabilize the growth surface at elevated temperatures. The achievable growth temperatures are significantly higher than in conventional low pressure MOCVD systems. With this the integration of In-rich materials into GaN and GaAlN becomes possible. In addition we present structural and optical properties of thin films grown by HPCVD at a reactor pressure of 15bar and temperatures of 870^oC. The Samples have been analyzed by Raman, optical absorption, IR reflectance and photoluminescence spectroscopy and by XRD. The growth of single phase layers of high crystalline quality has been proven by XRD with InN (0002) Bragg reflex FWHM's of 200arcsec (2θ-φ-scan) and 1600arcsec (rocking curves). These is backed up by Raman spectra with InN E2(high) peak FWHM's of below 10cm-1. Free carrier concentrations in the mid 10^18 cm-3 to low 10^19cm-3 have been calculated from IR reflection spectra. Photoluminescence spectroscopy showed luminescence at 0.77eV.

  3. InGaN nanowires with high InN molar fraction: growth, structural and optical properties.

    PubMed

    Zhang, Xin; Lourenço-Martins, Hugo; Meuret, Sophie; Kociak, Mathieu; Haas, Benedikt; Rouvière, Jean-Luc; Jouneau, Pierre-Henri; Bougerol, Catherine; Auzelle, T; Jalabert, D; Biquard, Xavier; Gayral, Bruno; Daudin, Bruno

    2016-05-13

    The structural and optical properties of axial GaN/InGaN/GaN nanowire heterostructures with high InN molar fractions grown by molecular beam epitaxy have been studied at the nanoscale by a combination of electron microscopy, extended x-ray absorption fine structure and nano-cathodoluminescence techniques. InN molar fractions up to 50% have been successfully incorporated without extended defects, as evidence of nanowire potentialities for practical device realisation in such a composition range. Taking advantage of the N-polarity of the self-nucleated GaN NWs grown by molecular beam epitaxy on Si(111), the N-polar InGaN stability temperature diagram has been experimentally determined and found to extend to a higher temperature than its metal-polar counterpart. Furthermore, annealing of GaN-capped InGaN NWs up to 800 °C has been found to result in a 20 times increase of photoluminescence intensity, which is assigned to point defect curing.

  4. Wine Valley Inn: A mineral water spa in Calistoga, California. Geothermal-energy-system conceptual design and economic feasibility

    SciTech Connect

    Not Available

    1981-10-26

    The purpose of this study is to determine the engineering and economic feasibility for utilizing geothermal energy for air conditioning and service water heating at the Wine Valley Inn, a mineral water spa in Calistoga, California. The study evaluates heating, ventilating, air conditioning and water heating systems suitable for direct heat geothermal application. Due to the excellent geothermal temperatures available at this site, the mechanics and economics of a geothermally powered chilled water cooling system are evaluated. The Wine Valley Inn has the resource potential to have one of the few totally geothermal powered air conditioning and water heating systems in the world. This total concept is completely developed. A water plan was prepared to determine the quantity of water required for fresh water well development based on the special requirements of the project. An economic evaluation of the system is included to justify the added capital investment needed to build the geothermally powered mineral spa. Energy payback calculations are presented. A thermal cascade system is proposed to direct the geothermal water through the energy system to first power the chiller, then the space heating system, domestic hot water, the two spas and finally to heat the swimming pool. The Energy Management strategy required to automatically control this cascade process using industrial quality micro-processor equipment is described. Energy Management controls are selected to keep equipment sizing at a minimum, pump only the amount of geothermal water needed and be self balancing.

  5. InGaN nanowires with high InN molar fraction: growth, structural and optical properties

    NASA Astrophysics Data System (ADS)

    Zhang, Xin; Lourenço-Martins, Hugo; Meuret, Sophie; Kociak, Mathieu; Haas, Benedikt; Rouvière, Jean-Luc; Jouneau, Pierre-Henri; Bougerol, Catherine; Auzelle, T.; Jalabert, D.; Biquard, Xavier; Gayral, Bruno; Daudin, Bruno

    2016-05-01

    The structural and optical properties of axial GaN/InGaN/GaN nanowire heterostructures with high InN molar fractions grown by molecular beam epitaxy have been studied at the nanoscale by a combination of electron microscopy, extended x-ray absorption fine structure and nano-cathodoluminescence techniques. InN molar fractions up to 50% have been successfully incorporated without extended defects, as evidence of nanowire potentialities for practical device realisation in such a composition range. Taking advantage of the N-polarity of the self-nucleated GaN NWs grown by molecular beam epitaxy on Si(111), the N-polar InGaN stability temperature diagram has been experimentally determined and found to extend to a higher temperature than its metal-polar counterpart. Furthermore, annealing of GaN-capped InGaN NWs up to 800 °C has been found to result in a 20 times increase of photoluminescence intensity, which is assigned to point defect curing.

  6. Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(101¯3) crystal on GaAs(110) by MOVPE

    NASA Astrophysics Data System (ADS)

    Cho, H. C.; Togashi, R.; Murakami, H.; Kumagai, Y.; Koukitu, A.

    2013-03-01

    In this report, effects of ammonia nitridation and low temperature InN buffer growth were investigated to improve the crystalline quality of InN(101¯3) grown on GaAs(110) by metalorganic vapor phase epitaxy (MOVPE). InN(101¯3) single crystal including less than 0.1% of differently oriented domains was successfully grown by inserting low temperature InN buffer layer. The full width at half maximum (FWHM) values of InN(101¯3) epitaxial layer were drastically decreased from 89 arcmin to 55 arcmin after processing ammonia nitridation of GaAs(110) substrate surface. Furthermore, the FWHM value was decreased to 38 arcmin by increasing growth time, and the mechanism of dislocation annihilation happened during epitaxial growth was discussed.

  7. The daytime boundary layer in the Inn Valley - A model evaluation study with high-quality turbulence measurements

    NASA Astrophysics Data System (ADS)

    Goger, Brigitta; Rotach, Mathias W.; Gohm, Alexander; Fuhrer, Oliver; Stiperski, Ivana

    2016-04-01

    Atmospheric processes associated with complex terrain include various phenomena on the meso- and microscale, which contribute significantly to the local weather in mountainous areas of the Earth. One of the most prominent and well-known boundary-layer phenomena in mountainous terrain is the daytime valley wind circulation, which is very pronounced on clear-sky days with weak synoptic forcing. We use several chosen "valley wind days" in the Inn Valley, Austria, as case studies for the evaluation of the performance of the NWP model COSMO on a horizontal resolution of 1.1 km with a focus on boundary-layer processes and turbulent exchange. The overall goal is to evaluate the model setup and to investigate whether the model's physics schemes (initially developed for horizontally homogeneous and flat surroundings) are suitable for truly complex terrain. We evaluate the model by using measurements from the so-called "i-Box" located in the Inn Valley. The i-Box consists of six core sites that are located at representative locations in the Inn Valley, and two remote sensing systems (wind Lidar and HATPRO passive T/RH profiler) in the city of Innsbruck. The long-term data set provides a data pool of high-resolution velocity variances, turbulence variables, radiation, soil moisture, and vertical profiles of temperature, humidity, and wind in the lower troposphere, which allows a process-oriented analysis. A special focus is laid on the daytime valley boundary layer and its interaction with the developing up-valley wind. Vertical cross-sections show that the valley wind has an asymmetric structure, hence, the i-Box stations show a high spatial variability. While the station on the valley bottom and on the south-facing slope are clearly under the strong influence of the valley wind, the two stations on the north-facing slope are rather dominated by slope flows. We find that the valley wind has a strong (indirect) influence on the development of the local turbulence kinetic

  8. Influence of In-N Clusters on Band Gap Energy of Dilute Nitride In x Ga1-x N y As1-y

    NASA Astrophysics Data System (ADS)

    Zhao, Chuan-Zhen; Guo, Heng-Fei; Chen, Li-Ying; Tang, Chun-Xiao; Lu, Ke-Qing

    2016-05-01

    The In-N clusters form in the dilute nitride InxGa1-xNyAs1-y alloys after annealing. It is found that the formation of the In-N clusters not only raises the N levels lying above the conduction band minimum (CBM) of InGaAs, but also raises the N levels below the CBM of InGaAs, leading to the variation of the impurity-host interaction. The blueshift of the band gap energy is relative to the variation of the impurity-host interaction. In order to describe the blueshift of the band gap energy due to the formation of the In-N clusters, a model is developed. It is found that the model can describe the blueshift of the band gap energy well. In addition, it is found the blueshift of the band gap energy due to the atom interdiffusion at the interface can be larger than that due to the formation of the In-N clusters. Supported by the National Natural Science Foundation of China under Grant No. 61504094, Tinjin Research Program of Application Foundation and Advanced Technology under No. 15JCYBJC16300, and Tianjin City High School Science and Technology Fund Planning Project No. 20120609

  9. Temperature dependence of the A1(LO) and E2 (high) phonons in hexagonal InN nanowires

    NASA Astrophysics Data System (ADS)

    Song, B.; Jian, J. K.; Wang, G.; Bao, H. Q.; Chen, X. L.

    2007-06-01

    The frequencies and dampings of the zone-center optical phonon modes of A1(LO) (longitudinal-optical) and E2 (high) in wurtzite InN nanowires have been investigated by micro-Raman scattering in the temperature range from 80 to 300 K. Our results reveal that the phonon frequencies decrease and the linewidths broaden with increasing temperature. The obtained experimental data of the frequencies and linewidths at various temperatures can be well described by an empirical model which takes into account the contribution of the thermal expansion of lattice and symmetric decay of phonons into two and three identical phonons with lower energy. The results show that decay into two phonons is the probable channel for the A1(LO) mode and three-phonon decay dominates the E2 (high) mode.

  10. Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations

    SciTech Connect

    Borges, P. D. E-mail: lscolfaro@txstate.edu; Scolfaro, L. E-mail: lscolfaro@txstate.edu

    2014-12-14

    The thermoelectric properties of indium nitride in the most stable wurtzite phase (w-InN) as a function of electron and hole concentrations and temperature were studied by solving the semiclassical Boltzmann transport equations in conjunction with ab initio electronic structure calculations, within Density Functional Theory. Based on maximally localized Wannier function basis set and the ab initio band energies, results for the Seebeck coefficient are presented and compared with available experimental data for n-type as well as p-type systems. Also, theoretical results for electric conductivity and power factor are presented. Most cases showed good agreement between the calculated properties and experimental data for w-InN unintentionally and p-type doped with magnesium. Our predictions for temperature and concentration dependences of electrical conductivity and power factor revealed a promising use of InN for intermediate and high temperature thermoelectric applications. The rigid band approach and constant scattering time approximation were utilized in the calculations.

  11. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    SciTech Connect

    Barick, B. K. E-mail: subho-dh@yahoo.co.in; Dhar, S. E-mail: subho-dh@yahoo.co.in; Rodríguez-Fernández, Carlos; Cantarero, Andres

    2015-05-15

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  12. Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system

    SciTech Connect

    Gherasoiu, I.; O'Steen, M.; Bird, T.; Gotthold, D.; Chandolu, A.; Song, D. Y.; Xu, S. X.; Holtz, M.; Nikishin, S. A.; Schaff, W. J.

    2008-05-15

    In this work, the authors report step-flow growth mode of InN on [0001] oriented GaN templates, using a production-style molecular beam epitaxy system, Veeco GEN200 registered , equipped with a plasma source. Using adaptive growth conditions, they have obtained a surface morphology that exhibits the step-flow features. The root mean squared roughness over an area of 5x5 {mu}m{sup 2} is 1.4 nm with monolayer height terrace steps (0.281 nm), based on atomic force microscopy. It has been found that the presence of In droplets leads to defective surface morphology. From x-ray diffraction, they estimate edge and screw dislocation densities. The former is dominant over the latter. Micro-Raman spectra reveal narrow E{sub 2}{sup 2} phonon lines consistent with excellent crystalline quality of the epitaxial layers. The Hall mobility of 1 {mu}m thick InN layers, grown in step-flow mode, is slightly higher than 1400 cm{sup 2}/V s, while for other growth conditions yielding a smooth surface with no well-defined steps, mobility as high as 1904 cm{sup 2}/V s at room temperature has been measured. The samples exhibit high intensity photoluminescence (PL) with a corresponding band edge that shifts with free carrier concentration. For the lowest carrier concentration of 5.6x10{sup 17} cm{sup -3}, they observe PL emission at {approx}0.64 eV.

  13. Growth kinetics and structural perfection of (InN)1/(GaN)1-20 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Kusakabe, Kazuhide; Hashimoto, Naoki; Itoi, Takaomi; Wang, Ke; Imai, Daichi; Yoshikawa, Akihiko

    2016-04-01

    The growth kinetics and structural perfection of (InN)1/(GaN)1-20 short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN)1/(GaN)4 SPSs was around 10%, and the corresponding InN coverage in the ˜1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ˜1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  14. Effects of Ga on the growth of InN on O-face ZnO(0001) by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Cho, Yong Jin; Riechert, Henning; Brandt, Oliver; Korytov, Maxim; Albrecht, Martin

    2012-07-30

    We compare the structural properties of InN and In{sub 0.95}Ga{sub 0.05}N films grown on O-face ZnO(0001) substrates at different temperatures. The small amount of Ga results in dramatic changes in the morphology and structural properties of InN. In particular, inversion domains start to appear at higher temperatures in the In{sub 0.95}Ga{sub 0.05}N film. This process is a consequence of the chemical reaction of ZnO with Ga which can be prevented by choosing the substrate temperature to be 450{sup Degree-Sign }C or below.

  15. Real-Time Optical Monitoring and Simulations of Gas Phase Kinetics in InN Vapor Phase Epitaxy at High Pressure

    NASA Technical Reports Server (NTRS)

    Dietz, Nikolaus; Woods, Vincent; McCall, Sonya D.; Bachmann, Klaus J.

    2003-01-01

    Understanding the kinetics of nucleation and coalescence of heteroepitaxial thin films is a crucial step in controlling a chemical vapor deposition process, since it defines the perfection of the heteroepitaxial film both in terms of extended defect formation and chemical integrity of the interface. The initial nucleation process also defines the film quality during the later stages of film growth. The growth of emerging new materials heterostructures such as InN or In-rich Ga(x)In(1-x)N require deposition methods operating at higher vapor densities due to the high thermal decomposition pressure in these materials. High nitrogen pressure has been demonstrated to suppress thermal decomposition of InN, but has not been applied yet in chemical vapor deposition or etching experiments. Because of the difficulty with maintaining stochiometry at elevated temperature, current knowledge regarding thermodynamic data for InN, e.g., its melting point, temperature-dependent heat capacity, heat and entropy of formation are known with far less accuracy than for InP, InAs and InSb. Also, no information exists regarding the partial pressures of nitrogen and phosphorus along the liquidus surfaces of mixed-anion alloys of InN, of which the InN(x)P(1-x) system is the most interesting option. A miscibility gap is expected for InN(x)P(1-x) pseudobinary solidus compositions, but its extent is not established at this point by experimental studies under near equilibrium conditions. The extension of chemical vapor deposition to elevated pressure is also necessary for retaining stoichiometric single phase surface composition for materials that are characterized by large thermal decomposition pressures at optimum processing temperatures.

  16. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

    2005-05-01

    We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (-In2O3) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal ()-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although -In2O3 grains with wide band-gap energy were formed in In film by N2 annealing, they were not easily formed in N2-annealed InN films. Even if they were not detected in N2-annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]0.5%). Although [O]1% could be estimated by investigating In2O3 grains formed in N2-annealed InN films, [O]0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In2O3 grains formed by H2 annealing with higher reactivity with InN and O2, using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films.

  17. High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

    SciTech Connect

    Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A.; Orozco Hinostroza, I. E.; Escobosa Echavarría, A.

    2014-05-12

    High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011{sup ¯}0] azimuth and a superimposed diffraction along the [112{sup ¯}0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm{sup −1} and E2(high) at 488 cm{sup −1}. Hall effect measurements showed a carrier density of 9 × 10{sup 18} cm{sup −3} and an electron Hall mobility of 340 cm{sup 2}/(V s) for a film thickness of 140 nm.

  18. In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

    NASA Astrophysics Data System (ADS)

    Suzuki, Akira; Bungi, Yu; Araki, Tsutomu; Nanishi, Yasushi; Mori, Yasuaki; Yamamoto, Hiroaki; Harima, Hiroshi

    2009-05-01

    To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E 2 (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.

  19. Validation of a simple distributed sediment delivery approach in selected sub-basins of the River Inn catchment area

    NASA Astrophysics Data System (ADS)

    Reid, Lucas; Kittlaus, Steffen; Scherer, Ulrike

    2015-04-01

    For large areas without highly detailed data the empirical Universal Soil Loss Equation (USLE) is widely used to quantify soil loss. The problem though is usually the quantification of actual sediment influx into the rivers. As the USLE provides long-term mean soil loss rates, it is often combined with spatially lumped models to estimate the sediment delivery ratio (SDR). But it gets difficult with spatially lumped approaches in large catchment areas where the geographical properties have a wide variance. In this study we developed a simple but spatially distributed approach to quantify the sediment delivery ratio by considering the characteristics of the flow paths in the catchments. The sediment delivery ratio was determined using an empirical approach considering the slope, morphology and land use properties along the flow path as an estimation of travel time of the eroded particles. The model was tested against suspended solids measurements in selected sub-basins of the River Inn catchment area in Germany and Austria, ranging from the high alpine south to the Molasse basin in the northern part.

  20. Optimal geometrical design of inertial vibration DC piezoelectric nanogenerators based on obliquely aligned InN nanowire arrays.

    PubMed

    Ku, Nai-Jen; Liu, Guocheng; Wang, Chao-Hung; Gupta, Kapil; Liao, Wei-Shun; Ban, Dayan; Liu, Chuan-Pu

    2017-09-28

    Piezoelectric nanogenerators have been investigated to generate electricity from environmental vibrations due to their energy conversion capabilities. In this study, we demonstrate an optimal geometrical design of inertial vibration direct-current piezoelectric nanogenerators based on obliquely aligned InN nanowire (NW) arrays with an optimized oblique angle of ∼58°, and driven by the inertial force of their own weight, using a mechanical shaker without any AC/DC converters. The nanogenerator device manifests potential applications not only as a unique energy harvesting device capable of scavenging energy from weak mechanical vibrations, but also as a sensitive strain sensor. The maximum output power density of the nanogenerator is estimated to be 2.9 nW cm(-2), leading to an improvement of about 3-12 times that of vertically aligned ZnO NW DC nanogenerators. Integration of two nanogenerators also exhibits a linear increase in the output power, offering an enormous potential for the creation of self-powered sustainable nanosystems utilizing incessantly natural ambient energy sources.

  1. A new perspective on soil erosion: exploring a thermodynamic approach in a small area of the River Inn catchment

    NASA Astrophysics Data System (ADS)

    Reid, Lucas; Scherer, Ulrike; Zehe, Erwin

    2016-04-01

    Soil erosion modeling has always struggled with compensating for the difference in time and spatial scale between model, data and the actual processes involved. This is especially the case with non-event based long-term models based on the Universal Soil Loss Equation (USLE), yet USLE based soil erosion models are among the most common and widely used for they have rather low data requirements and can be applied to large areas. But the majority of mass from soil erosion is eroded within short periods of times during heavy rain events, often within minutes or hours. Advancements of the USLE (eg. the Modified Universal Soil Loss Equation, MUSLE) allow for a daily time step, but still apply the same empirical methods derived from the USLE. And to improve the actual quantification of sediment input into rivers soil erosion models are often combined with a Sediment Delivery Ratio (SDR) to get results within the range of measurements. This is still a viable approach for many applications, yet it leaves much to be desired in terms of understanding and reproducing the processes behind soil erosion and sediment input into rivers. That's why, instead of refining and retuning the existing methods, we explore a more comprehensive, physically consistent description on soil erosion. The idea is to describe soil erosion as a dissipative process (Kleidon et al., 2013) and test it in a small sub-basin of the River Inn catchment area in the pre-Alpine foothills. We then compare the results to sediment load measurements from the sub-basin and discuss the advantages and issues with the application of such an approach.

  2. Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C

    NASA Astrophysics Data System (ADS)

    Takai, Shinnosuke; Lu, Yi; Oda, Osamu; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru

    2017-06-01

    The InN films were deposited on GaN surfaces at a low temperature of 200 °C by radical-enhanced metal organic chemical vapor deposition (REMOCVD). The REMOCVD system can provide N radicals from the plasma of a N2-H2 mixture gas without using ammonia. Two types of GaN substrate, bulk GaN and GaN on Si(111), were used. The growth mode was modeled as a step flow on the basis of surface morphology observation by atomic force microscopy.

  3. The effect of McInnes solution on enamel and the effect of Tooth mousse on bleached enamel: An in vitro study

    PubMed Central

    Darshan, H E; Shashikiran, N D

    2008-01-01

    Aims: To evaluate the effect of McInnes bleaching agent on the micro hardness of enamel before and after bleaching and to evaluate the effect of G C Tooth Mousse on the bleached enamel surface for its microhardness. Materials and Methods: McInnes bleaching solution, Casein phosphopeptide-amorphous calcium phosphate CCP-ACP (G C Tooth mousse) artificial saliva (Dept of Oral Pathology, College of Dental Sciences, Davengere), deionized water, Vickers Micro Hardness tester (Zwick/ZHV, Germany), freshly extracted teeth, cold cure acrylic, Diamond disc (Horico - PFINGST New jersey USA, KAVO- Germany), straight handpiece (kavo peca reta) and plastic moulds (6.5 × 2 mm). The purpose of this study was to evaluate and compare microhardness of the sound enamel surface by Vickers Hardness Number before and after bleaching with McInnes solution, and to evaluate the effect of casein phosphopeptide amorphous calcium phosphate (G C Tooth Mousse) on the bleached enamel surface for its microhardness. Statistical analysis: The data obtained from the test were subjected for statistical analysis and are presented as range, mean and standard deviation. P value of 0.05 or less was considered for statistical significance. The changes in microhardness at different times of assessment were analyzed using the paired ‘t’ test Results: All the samples showed decrease in the microhardness after two cycles of bleaching, though immediately after bleaching the decrease in the microhardness was not significant (P = 0.34). However, after the second cycles, it showed a significant decrease (P<0.01) in the microhardness. After application of remineralization solution (GC Tooth mousse), the samples showed a marginal increase in the microhardness (P<0.05) after seven days and a marked increase after fourteen days (P<0.001). Conclusion: McInnes bleaching agent does decrease the microhardness of enamel by causing enamel demineralization and GC Tooth mousse used in the study causes an increase in the

  4. Probabilistic retrospective forecasts of snow accumulation for the upcoming winter season in the Inn headwaters catchment (Austria)

    NASA Astrophysics Data System (ADS)

    Förster, Kristian; Hanzer, Florian; Stoll, Elena; Schöber, Johannes; Scaife, Adam A.; MacLachlan, Craig; Huttenlau, Matthias; Achleitner, Stefan; Strasser, Ulrich

    2017-04-01

    Seasonal predictions aim at forecasting meteorological quantities for the upcoming months and are analysed as monthly data in many cases due to the uncertainties involved. The skill of seasonal predictions is, however, not distributed homogeneously in space and time. While good model skill measures can be achieved for El Niño and the tropics, the skill of seasonal predictions for Europe is generally lower, which limits the applicability of this kind of predictions. This contribution deals with a systematic analysis of re-forecast data obtained from two coupled atmosphere-ocean climate models (Met Office GloSea5 and NCEP CFSv2). In contrast to some other studies, the focus is on the prediction of hydrologic storages rather than on hydrologic fluxes such as precipitation or runoff. This approach acknowledges the persistence in time of storages which makes predictions more skilful. The study area is the snow- and ice-melt dominated Inn headwaters catchment upstream of Kirchbichl gauging station (9 310 km2) located in the Austrian Alps. Building on wintertime re-forecasts of the climate models and a subsequent rev-ESP experiment (reverse Ensemble Streamflow Prediction), water balance simulations have been carried out using the Alpine Water balance And Runoff Estimation model (AWARE). Simulations of accumulated runoff depth in the subsequent spring season are compared to observations. This comparison of preliminary results reveals that the ensemble means of computed anomalies of accumulated runoff depth compare well with observations. The model chain GloSea5-AWARE correctly predicted the tendency of anomalies for 9 of 13 years, while the corresponding CFSv2-AWARE simulations result in only 5 of 13 correctly predicted years. The results suggest that some seasonal predictions may be capable of predicting tendencies of hydrologic model storages, although the skill of these predictions is in many cases low in Europe. As the number of correctly predicted winters does not

  5. Post-growth thermal oxidation of wurtzite InN thin films into body-center cubic In{sub 2}O{sub 3} for chemical/gas sensing applications

    SciTech Connect

    Liu, H.F.; Yakovlev, N.L.; Chi, D.Z.; Liu, W.

    2014-06-01

    Post-growth thermal oxidations of InN have been studied using high-resolution x-ray diffraction (HRXRD) and secondary ion-mass spectroscopy (SIMS). The InN thin films, having relative high crystal quality, were grown by metal–organic chemical vapor deposition (MOCVD) on c-sapphire substrates using InGaN/GaN buffer layers. HRXRD reveals that oxidation of wurtzite InN into body-center cubic In{sub 2}O{sub 3} occurred at elevated temperatures. A Si{sub 3}N{sub 4} encapsulation improves the crystal quality of In{sub 2}O{sub 3} oxidized by using conventional rapid thermal annealing (RTA) but it results in the presence of undesired metallic indium. Cycle-RTA not only improves the crystal quality but also avoids the byproduct of metallic indium. SIMS depth profile, using contaminate elements as the ‘interface markers,’ provide evidence that the oxidation of InN is dominated by oxygen inward diffusion mechanism. Together with the HRXRD results, we conclude that the crystal quality of the resultant In{sub 2}O{sub 3}/InN heterostructure is mainly controlled by the balance between the speeds of oxygen diffusion and InN thermal dissociation, which can be effectively tuned by cycle-RTA. The obtained In{sub 2}O{sub 3}/InN heterostructures can be fundamental materials for studying high speed chemical/gas sensing devices. - Graphical abstract: Oxidation of h-InN into bcc-In{sub 2}O{sub 3} has been realized at elevated temperatures. A Si{sub 3}N{sub 4} cap improves the crystal quality of In{sub 2}O{sub 3} oxidized by conventional RTA but it results in the presence of undesired metallic indium. Cycle-RTA not only improves the crystal quality but also avoids the byproduct of metallic indium. SIMS depth profiles provide evidence that the oxidation of InN is dominated by oxygen inward diffusion mechanism. The crystal quality of the resultant In{sub 2}O{sub 3}/InN heterostructure is mainly controlled by the balance between the speeds of oxygen diffusion and InN thermal

  6. Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al{sub 2}O{sub 3} (0001)

    SciTech Connect

    Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S. M.

    2011-05-01

    The issue of variable bandgap values for InN films grown on c-sapphire has been addressed in this work. {alpha}-InN films have been deposited in nitrogen rich condition at different substrate temperatures on bare Al{sub 2}O{sub 3} (0001) by plasma assisted molecular beam epitaxy (PA-MBE). The results of several complementary characterization techniques show that single crystalline wurtzite InN is formed, but their orientation depends on the substrate temperature. The bandgap measured on these samples (1.78 eV) is explained by Moss-Burstein shift on these degenerately n-doped samples. Our results discount effects of crystal orientation, presence of oxygen at grain boundaries and In/N stoichiometry as factors that influence the measured band-gap values.

  7. Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon-plasmon coupled modes.

    PubMed

    Cuscó, R; Alarcón-Lladó, E; Ibáñez, J; Yamaguchi, T; Nanishi, Y; Artús, L

    2009-10-14

    We use a hydrodynamical approach to analyse the long-wavelength LO-phonon-plasmon coupled modes observed in a set of high-quality MBE-grown InN epilayers with electron densities varying over one order of magnitude, from ∼2 × 10(18) to ∼2 × 10(19)  cm(-3). The samples were characterized by scanning electron microscopy, x-ray diffraction and Hall measurements. The correlation observed between the E(2)(high) mode frequency, and hence residual strain, and the electron density measured in the layers indicates that the differences in background electron density may be associated with threading dislocations. Owing to the low Raman signal, only the L(-) branch of the coupled modes can be unambiguously observed. The frequency of the L(-) Raman peak is, however, sensitive enough to the free electron density to allow its determination from lineshape fits to the spectra. These were carried out using an extended hydrodynamical model. Given the small bandgap energy and large conduction band nonparabolicity of InN, suitable expressions for the optical effective mass and mean square velocity that enter the hydrodynamical model were derived. Electron density values extracted from L(-) lineshape fits agree reasonably well with Hall determinations.

  8. SpaceInn hare-and-hounds exercise: Estimation of stellar properties using space-based asteroseismic data

    NASA Astrophysics Data System (ADS)

    Reese, D. R.; Chaplin, W. J.; Davies, G. R.; Miglio, A.; Antia, H. M.; Ball, W. H.; Basu, S.; Buldgen, G.; Christensen-Dalsgaard, J.; Coelho, H. R.; Hekker, S.; Houdek, G.; Lebreton, Y.; Mazumdar, A.; Metcalfe, T. S.; Silva Aguirre, V.; Stello, D.; Verma, K.

    2016-07-01

    Context. Detailed oscillation spectra comprising individual frequencies for numerous solar-type stars and red giants are either currently available, e.g. courtesy of the CoRoT, Kepler, and K2 missions, or will become available with the upcoming NASA TESS and ESA PLATO 2.0 missions. The data can lead to a precise characterisation of these stars thereby improving our understanding of stellar evolution, exoplanetary systems, and the history of our galaxy. Aims: Our goal is to test and compare different methods for obtaining stellar properties from oscillation frequencies and spectroscopic constraints. Specifically, we would like to evaluate the accuracy of the results and reliability of the associated error bars, and to see where there is room for improvement. Methods: In the context of the SpaceInn network, we carried out a hare-and-hounds exercise in which one group, the hares, simulated observations of oscillation spectra for a set of ten artificial solar-type stars, and a number of hounds applied various methods for characterising these stars based on the data produced by the hares. Most of the hounds fell into two main groups. The first group used forward modelling (i.e. applied various search/optimisation algorithms in a stellar parameter space) whereas the second group relied on acoustic glitch signatures. Results: Results based on the forward modelling approach were accurate to 1.5% (radius), 3.9% (mass), 23% (age), 1.5% (surface gravity), and 1.8% (mean density), as based on the root mean square difference. Individual hounds reached different degrees of accuracy, some of which were substantially better than the above average values. For the two 1M⊙ stellar targets, the accuracy on the age is better than 10% thereby satisfying the requirements for the PLATO 2.0 mission. High stellar masses and atomic diffusion (which in our models does not include the effects of radiative accelerations) proved to be sources of difficulty. The average accuracies for the

  9. Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT

    SciTech Connect

    Lenka, T. R. Panda, A. K.

    2011-09-15

    A new AlGaN/GaN-based high electron mobility transistor (HEMT) is proposed and its micro-wave characteristics are discussed by introducing a nanoscale AlN or InN layer to study the potential improvement in their high frequency performance. The 2DEG transport mechanism including various sub-band calculations for both (Al,In) N-based HEMTs are also discussed in the paper. Apart from direct current characteristics of the proposed HEMT, various microwave parameters such as transconductance, unit current gain (h{sub 21} = 1) cut-off frequency (f{sub t}), high power-gain frequency (f{sub max}). Masons available/stable gain and masons unilateral gain are also discussed for both devices to understand its suitable deployment in microwave frequency range.

  10. Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

    SciTech Connect

    Barick, Barun Kumar Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata

    2016-09-15

    Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

  11. Annual Review of BPA-Funded Projects in Natural and Artificial Propagation of Salmonids, March 27-29, 1985, Holiday Inn Airport, Portland, Oregon.

    SciTech Connect

    United States. Bonneville Power Administration.

    1985-04-01

    The Fish and Wildlife Division of Bonneville Power Administration (BPA) hosted a meeting for contractors to present the results of fiscal year 1984 research conducted to implement the Northwest Power Planning Council's Fish and Wildlife Program. The meeting focused on those projects specifically related to natural and artificial propagation of salmonids. The presentations were held at the Holiday Inn Airport in Portland, Oregon, on March 27-29, 1985. This document contains abstracts of the presentations from that meeting. Section 1 contains abstracts on artificial propagation, fish health, and downstream migration, and Section 2 contains abstracts on natural propagation and habitat improvement. The abstracts are indexed by BPA Project Number and by Fish and Wildlife Program Measure. The registered attendees at the meeting are listed alphabetically in Appendix A and by affiliation in Appendix B.

  12. Thermal stability of W, WSi{sub {ital x}}, and Ti/Al ohmic contacts to InGaN, InN, and InAlN

    SciTech Connect

    Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; MacKenzie, J.D.; Shul, R.J.; Zolper, J.C.; Lovejoy, M.L.; Baca, A.G.; Hagerott-Crawford, M.

    1996-11-01

    W, WSi{sub 0.44}, and Ti/Al contact properties were examined on {ital n}{sup +}In{sub 0.65}Ga{sub 0.35}N, InN, and In{sub 0.75}Al{sub 0.25}N. W was found to produce low specific contact resistance (d{sub {ital c}}{approximately}10{sup {minus}7} {Omega}cm{sup 2}) ohmic contacts to InGaN, with significant reaction between metal and semiconductor occurring at 900{degree}C mainly due to out diffusion of In and N. WSi{sub {ital x}} showed an as-deposited d{sub {ital c}} of 4{times}10{sup {minus}7} {Omega}cm{sup 2} but this degraded significantly with subsequent annealing at {ge}600{degree}C. Ti/Al contacts were stable to {approximately}600{degree}C (d{sub {ital c}}{approximately}4{times}10{sup {minus}7} {Omega}cm{sup 2} at {le}600{degree}C). The surfaces of these contacts remained smooth to 800{degree}C for W and WSi{sub {ital x}} and 650{degree}C for Ti/Al. InN contacted with W and Ti/Al produced ohmic contacts with d{sub {ital c}}{approximately}10{sup {minus}7} {Omega}cm{sup 2} and for WSi{sub {ital xd}}{sub {ital c}}{approximately}10{sup {minus}6} {Omega}cm{sup 2}. All remained smooth to {approximately}600{degree}C, but exhibited significant interdiffusion of In, N, W, and Ti, respectively, at higher temperatures. The contact resistances for all three metalization schemes were {ge}10{sup {minus}4} {Omega}cm{sup 2} on InAlN, and degraded with subsequent annealing. {copyright} {ital 1996 American Vacuum Society}

  13. W, WSi{sub x} and Ti/Al low resistance OHMIC contacts to InGaN, InN and InAlN

    SciTech Connect

    Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; MacKenzie, J.D.; Shul, R.J.; Zolper, J.C.; Lovejoy, M.L.; Baca, A.G.; Hagerott-Crawford, M.

    1996-06-01

    W, WSi{sub 0.44} and Ti/Al contacts were examined on n{sup +} In{sub 0.65}Ga{sub 0.35}N, InN and In{sub 0.75}Al{sub 0.25}N. W was found to produce low specific contact resistance ({rho}{sub c} {approximately} 10{sup {minus}7} {Omega} {center_dot}cm{sup 2}) ohmic contacts to InGaN, with significant reaction between metal and semiconductor at 900 {degrees}C mainly due to out diffusion of In and N. WSi{sub x} showed an as-deposited {rho}{sub c} of 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} but this degraded significantly with subsequent annealing. Ti/Al contacts were stable to {approximately} 600 {degrees}C ({rho}{sub c} {approximately} 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} at {le}600 {degrees}C). The surfaces of these contacts remain smooth to 800 {degrees}C for W and WSi{sub x} and 650 {degrees}C for Ti/Al. InN contacted with W and Ti/Al produced ohmic contacts with {rho}{sub c} {approximately} 10{sup {minus}7} {Omega} {center_dot}cm{sup 2} and for WSi{sub x} {rho}{sub c} {approximately} 10{sup {minus}6} {Omega} {center_dot}cm{sup 2}. All remained smooth to {approximately} 600 {degrees}C, but exhibited significant interdiffusion of In, N, W and Ti respectively at higher temperatures. The contact resistances for all three metalization schemes were {ge} 10{sup {minus}4} {Omega} {center_dot}cm{sup 2} on InAlN, and degrades with subsequent annealing. The Ti/Al was found to react with the InAlN above 400 {degrees}C, causing the contact resistance to increase rapidly. W and WSi{sub x} proved to be more stable with {rho}{sub c} {approximately} 10{sup {minus}2} and 10{sup {minus}3} {Omega} {center_dot}cm{sup 2} up to 650 {degrees}C and 700 {degrees}C respectively.

  14. High rate dry etching of GaN, AlN and InN in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar plasmas

    SciTech Connect

    Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; Shul, R.J.; Kilcoyne, S.P.; Crawford, M.H.; Howard, A.J.; Parmeter, J.E.

    1995-05-01

    Etch rates for binary nitrides in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar are reported as a function of temperature, rf-bias, microwave power, pressure and relative gas proportions. GaN etch rates remain relatively constant from 30 to 125{degrees}C and then increase to a maximum of 2340 {angstrom}-min{sup {minus}1} at 170{degrees}C. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 {angstrom}-min{sup {minus}1} at 30{degrees}C. When CH{sub 4} is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III-V nitrides remains unchanged over the temperatures studied. The GaN and InN rates increase significantly with rf power, and the fastest rates for all three binaries are obtained at 2 mTorr. Surface morphology is smooth for GaN over a wide range of conditions, whereas InN surfaces are more sensitive to plasma parameters.

  15. Tuning the effective band gap and finding the optimal growth condition of InN thin films on GaN/sapphire substrates by plasma assisted molecular beam epitaxy technique

    NASA Astrophysics Data System (ADS)

    Ghosh, Kankat; Rathore, Jaswant Singh; Laha, Apurba

    2017-01-01

    InN thin films are grown on GaN/sapphire substrates with varying the nitrogen plasma power in plasma assisted molecular beam epitaxy (PA-MBE) system. In order to evaluate the effect of nitrogen plasma power on the different properties of the InN films, several characterization viz. x-ray diffraction, atomic force microscopy, photoluminescence measurement, infra-red spectroscopy and Hall measurement were performed. Two interesting phenomena observed from the measurements are described in this paper. Firstly, it is found from both the photoluminescence and infrared spectroscopy that only by varying the nitrogen plasma power (thus the III/V ratio), one can fine tune the optical absorption edge, i.e., the effective band gap of InN from ∼0.72 eV to ∼ 0.77 eV. Secondly, it is inferred that the film grown with stoichiometric condition (III/V ∼ 1) exhibits the best structural and electrical properties.

  16. Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Imura, Masataka; Tsuda, Shunsuke; Nagata, Takahiro; Banal, Ryan G.; Yoshikawa, Hideki; Yang, AnLi; Yamashita, Yoshiyuki; Kobayashi, Keisuke; Koide, Yasuo; Yamaguchi, Tomohiro; Kaneko, Masamitsu; Uematsu, Nao; Wang, Ke; Araki, Tsutomu; Nanishi, Yasushi

    2017-03-01

    To evaluate the polarity, energy band diagram, and oxygen (O) distribution of a heavily Mg-doped InN (InN:Mg+) epilayer with a Mg concentration of 1.0 ± 0.5 × 1020 cm-3, the core-level and valence band (VB) photoelectron spectra are investigated by angle-resolved soft and hard X-ray photoelectron spectroscopies. The InN:Mg+ epilayers are grown by radio-frequency plasma-assisted molecular beam epitaxy. In this doping level, the polarity inversion from In-polar to N-polar occurs with the increase in the Mg flow rate under the same growth conditions, and the VB spectrum clearly indicates the direction of polarity of InN:Mg+, which is N-polar. The energy band diagram is considered to exhibit a two-step downward bending structure due to the coexistence of the n+ surface electron accumulation layer and heavily Mg-doped p+ layer formed in the bulk. The O concentration rapidly increases until ˜4 nm with respect to the surface, which is deduced to be one of the reasons of the formation of the anomalous two-step energy band profile.

  17. Intrinsic thermal conductivities and size effect of alloys of wurtzite AlN, GaN, and InN from first-principles

    NASA Astrophysics Data System (ADS)

    Ma, Jinlong; Li, Wu; Luo, Xiaobing

    2016-03-01

    Despite the fact the alloys of wurtzite AlN, GaN, and InN are widely used in electronics, the studies on their thermal conductivities (κ) are inadequate, and the intrinsic limits are still unknown. In this work, the intrinsic κ of alloys and their films are calculated from first-principles within the virtual crystal treatment. The κ of alloys are strongly suppressed even by a small amount of alloying. For instance, with only 1% alloying of Al or In, κ of GaN decreases about 60%. At relatively high alloying, with concentration between 0.2 and 0.8, the κ of alloys are not significantly changed. At room temperature, the minimal a-axis κ are about 18, 22, and 8 W m-1 K-1, while the minimal c-axis κ are about 22, 27, and 10 W m-1 K-1 for AlxGa1-xN, InxGa1-xN, and InxAl1-xN, respectively. The size effect in films can persist up to a few tens of micrometers, and κ can be reduced by half in about 100 nm thick films.

  18. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    SciTech Connect

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Wang, Liancheng; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2014-07-21

    In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination.

  19. Point defects introduced by InN alloying into In{sub x}Ga{sub 1-x}N probed using a monoenergetic positron beam

    SciTech Connect

    Uedono, A.; Tsutsui, T.; Watanabe, T.; Kimura, S.; Zhang, Y.; Lozac'h, M.; Sang, L. W.; Sumiya, M.; Ishibashi, S.

    2013-03-28

    Native defects in In{sub x}Ga{sub 1-x}N (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for In{sub x}Ga{sub 1-x}N showed that vacancy-type defects were introduced with increasing InN composition, and the major defect species was identified as complexes between a cation vacancy and a nitrogen vacancy. The concentration of the divacancy, however, was found to be suppressed by Mg doping. The momentum distribution of electrons at the In{sub x}Ga{sub 1-x}N/GaN interface was close to that in defect-free GaN or In{sub x}Ga{sub 1-x}N, which was attributed to localization of positrons at the interface due to the built-in electric field, and to suppression of positron trapping by vacancy-type defects. We have also shown that the diffusion property of positrons is sensitive to an electric field near the In{sub x}Ga{sub 1-x}N/GaN interface.

  20. The effect of electrical properties for InGaN and InN by high-energy particle irradiation (notice of removal)

    NASA Astrophysics Data System (ADS)

    Dong, Shao-guang; Fan, Guang-han

    2008-03-01

    This paper (SPIE Paper 68411H) was removed from the SPIE Digital Library on 8 August 2008 upon discovery that the paper has substantially plagiarized the following two papers: R.E. Jones, S.X. Li, L. Hsu, K.M. Yu, W. Walukiewicz, Z. Liliental-Weber, J.W. Ager III, E.E. Haller, H. Lu, and W.J. Schaff, "Native-defect-controlled n-type conductivity in InN," Physica B 376-377 (2006) 436-439 and S.X. Li, K.M. Yu, J. Wu, R.E. Jones, W. Walukiewicz, J.W. Ager III, W. Shan, E.E. Haller, Hai Lu, and William J. Schaff, "Native defects in InxGa1-xN alloys," Physica B 376-377 (2006) 432-435. As stated in the SPIE Publication Ethics Guidelines, "SPIE defines plagiarism as the reuse of someone else's prior ideas, processes, results, or words without explicit attribution of the original author and source, or falsely representing someone else's work as one's own. Unauthorized use of another researcher's unpublished data or findings without permission is considered to be a form of plagiarism even if the source is attributed. SPIE considers plagiarism in any form, at any level, to be unacceptable and a serious breach of professional conduct." It is SPIE policy to remove such papers and to provide citations to original sources so that interested readers can obtain the information directly from those sources. One of the authors, Shao-guang Dong, accepts full responsibility and apologizes for this plagiarism and has absolved the second author, Guang-han Fan, of any prior knowledge of or professional misconduct in this matter. Guang-han Fan also states that he had not previously seen the paper or given permission to include his name as an author.

  1. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Imai, Daichi; Hwang, Eun-Sook

    2016-12-01

    The growth kinetics of nominally one-monolayer (˜1-ML)-thick InN wells on/in the +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the impacts of excess In atoms and/or In droplets at a high growth temperature of 650 °C. Even at a constant growth temperature of 650 °C, the thickness of the sheet-island-like InN-well layers could be controlled/varied from 1-ML to 2-ML owing to the effect of excess In atoms and/or In droplets accumulated during growth. The possible growth mechanism is discussed based on the ring-shaped bright cathodoluminescence emissions introduced along the circumference of the In droplets during growth. The effective thermal stability of N atoms below the bilayer adsorbed In atoms was increased by the presence of In droplets, resulting in the freezing of 2-ML-thick InN wells into the GaN matrix. It therefore became possible to study the difference between the emission properties of 1-ML and 2-ML-thick InN wells/GaN matrix quantum wells (QWs) having similar GaN matrix crystallinity grown at the same temperature. InN/GaN QW-samples grown under widely different In + N* supply conditions characteristically separated into two groups with distinctive emission-peak wavelengths originating from 1-ML and 2-ML-thick InN wells embedded in the GaN matrix. Reflecting the growth mechanism inherent to the D-ALEp of InN on/in the +c-GaN matrix at high temperature, either 1-ML or 2-ML-thick "binary" InN well layers tended to be frozen into the GaN matrix rather InGaN random ternary-alloys. Both the structural quality and uniformity of the 1-ML InN well sample were better than those of the 2-ML InN well sample, essentially owing to the quite thin critical thickness of around 1-ML arising from the large lattice mismatch of InN and GaN.

  2. India Basin 900 Innes Remediation

    EPA Pesticide Factsheets

    Lower Walnut Creek Restoration Project will restore and enhance coastal wetlands along southern shoreline of Suisun Bay from Suisun Bay upstream along Walnut Creek, improving habitat quality, diversity, and connectivity along three miles of creek channel.

  3. Places in Time: The Inns and Outhouses of Rhetoric

    ERIC Educational Resources Information Center

    Mailloux, Steven

    2006-01-01

    Rhetoric is often about "good guys" and "bad guys." Even more basically, it concerns who is in and who is out, what is included and what is excluded, who is placed inside and who outside a cultural community, a political movement, a professional organization. These ins and outs concern both the commonplaces of rhetoric and the rhetoric of …

  4. Places in Time: The Inns and Outhouses of Rhetoric

    ERIC Educational Resources Information Center

    Mailloux, Steven

    2006-01-01

    Rhetoric is often about "good guys" and "bad guys." Even more basically, it concerns who is in and who is out, what is included and what is excluded, who is placed inside and who outside a cultural community, a political movement, a professional organization. These ins and outs concern both the commonplaces of rhetoric and the rhetoric of …

  5. [SwapINN: analytic study about prescription swaps at pharmacies].

    PubMed

    Moutinho, Ana; Alexandra, Denise; Rodrigues, Renata

    2014-01-01

    Introdução: A prescrição obrigatória por DCI foi imposta em 2012, para redução de custos do SNS e motivou discussão entre as partes envolvidas. Estudámos, numa população real, a dinâmica prescrição-dispensa de medicamentos.Objetivos: Determinar a percentagem de prescrições substituídas; avaliar os fatores associados à substituição; identificar as respetivas justificações; quantificar os diferenciais dos custos para utente e Serviço Nacional de Saúde.Material e Métodos: Estudo analítico. Amostra de conveniência constituída pelos medicamentos prescritos de uma unidade de saúde, de 19 a 23 de Dezembro de 2011. Três dias depois, os utentes foram entrevistados telefonicamente. Software: Excel® e SPSS®. Testes: Qui-quadrado e Mann-Whitney; n.s. = 0,05.Resultados: Total de 255 prescrições. A maioria foi efetuada a mulheres (62%), idade média 52 anos, 4 anos de escolaridade (33%) e para situações agudas (53%). Foram substituídas 31% das prescrições, sem relação com idade, sexo ou escolaridade, nem com o médico prescritor ou farmácia. Os medicamentos prescritos para situações crónicas foram menos substituídos (p < 0,001), assim como as prescrições de marca (p < 0,001). Os anti-infeciosos e anti-alérgicos foram os grupos com mais substituições (p = 0,009). Os utentes não se aperceberam da substituição em 72% dos casos. Nos casos de substituição, o utente pagou, em média, mais 79% que o prescrito e o Serviço Nacional de Saúde 5%.Discussão/Conclusão: Verificou-se substituição de 31% das prescrições, com mais custos para utente e Serviço Nacional de Saúde. Consideramos possível viés de seleção, informação e registo. Sendo agora obrigatória a prescrição por DCI, sugerimos a análise regular, a nível nacional, com base nas aplicações informáticas em uso, da prescrição e respetiva dispensa.

  6. Solar hot water system installed at Days Inn Motel, Jacksonville, Florida

    NASA Technical Reports Server (NTRS)

    1980-01-01

    The solar system was designed to provide 65 percent of the hot water demand. Water in the liquid flat plate collector (900 square feet) system automatically drains into the 1000 gallon lined and vented steel storage tank when the pump is not running. Heat is transferred from storage to Domestic Hot Water (DHW) tanks through a tube and shell heat exchanger. A circulating pump between the DHW tanks and heat exchanger enables solar heated water to help make up DHW standby losses. All pumps are controlled by differential temperature.

  7. Solar hot water system installed at Day's Inn Motel, Dallas, Texas (Valley View)

    NASA Technical Reports Server (NTRS)

    1980-01-01

    The solar system was designed to provide 65 percent of the total domestic hot water (DHW) demand. A liquid (water) flat plate collector (1,000 square feet) system automatically drains into the 1,000 gallon steel storage tank when the solar pump is not running. Heat is transferred from the DHW tanks through a shell and tube heat exchanger. A circulating pump between the DHW tanks and heat exchanger enables solar heated water to help make up standby losses. All pumps are controlled by differential temperature controllers.

  8. Solar hot water system installed at Day's Inn Motel, Savannah, Georgia

    NASA Technical Reports Server (NTRS)

    1980-01-01

    The Solar System was designed to provide 50 percent of the total Domestic Hot Water (DHW) demand. Liquid Flat Plate Collectors (900 square feet) are used for the collector subsystem. The collector subsystem is closed loop, using 50 percent Ethylene Glycol solution antifreeze for freeze protection. The 1,000 gallon fiber glass storage tank contains two heat exchangers. One of the heat exchangers heats the storage tank with the collector solar energy. The other heat exchanger preheats the cold supply water as it passes through on the way to the Domestic Hot Water (DHW) tank heaters. Electrical energy supplements the solar energy for the DHW. The Collector Mounting System utilizes guy wires to structurally tie the collector array to the building.

  9. Solar hot water system installed at Days Inn Motel, Dallas, Texas (Forrest Lane)

    NASA Technical Reports Server (NTRS)

    1980-01-01

    The solar system was designed to provide 65 percent of the total Domestic Hot Water (DHW) demand. The liquid flat plate (water) collector (1,000 square feet) system automatically drains into the 1,000 gallon steel storage tank located in the mechanical room when the pump is not running. Heat is transferred from the storage tank to DHW tanks through a tube and shell heat exchanger. A circulating pump between the DHW tanks and the heat exchanger enables solar heated water to help make DHW tank standby losses. All pumps are controlled by differential temperature.

  10. Solar hot water system installed at Day's Inn Motel, Dallas, Texas (Valley View)

    NASA Astrophysics Data System (ADS)

    1980-09-01

    The solar system was designed to provide 65 percent of the total domestic hot water (DHW) demand. A liquid (water) flat plate collector (1,000 square feet) system automatically drains into the 1,000 gallon steel storage tank when the solar pump is not running. Heat is transferred from the DHW tanks through a shell and tube heat exchanger. A circulating pump between the DHW tanks and heat exchanger enables solar heated water to help make up standby losses. All pumps are controlled by differential temperature controllers.

  11. Solar hot water system installed at Days Inn Motel, Dallas, Texas (Forrest Lane)

    NASA Astrophysics Data System (ADS)

    1980-09-01

    The solar system was designed to provide 65 percent of the total Domestic Hot Water (DHW) demand. The liquid flat plate (water) collector (1,000 square feet) system automatically drains into the 1,000 gallon steel storage tank located in the mechanical room when the pump is not running. Heat is transferred from the storage tank to DHW tanks through a tube and shell heat exchanger. A circulating pump between the DHW tanks and the heat exchanger enables solar heated water to help make DHW tank standby losses. All pumps are controlled by differential temperature.

  12. Human Pulpal Reaction to the Modified McInnes Bleaching Technique,

    DTIC Science & Technology

    1983-05-01

    Bleaching,v ital bleaching, pulp reaction D LA- 2. ABSTR ACT (Cotinue aevrw L N nweoesY and Identily by block number); ; z Am.C~m,-,e... pulp . Under the conditions of this study, there were no significant pulpal reactions to the bleaching technique even when a substantial amount of the...Bleaching Technique had any adverse effects on the pulp . Under the conditions of this study, there were no significant pulpal reactions to the

  13. Project EXCEL: Holiday Inn at Fisherman's Wharf, Housekeeping Department: Improving Customer Service, Module 3.

    ERIC Educational Resources Information Center

    Career Resources Development Center, Inc., San Francisco, CA.

    Project EXCEL is a federally-funded workplace literacy program involving hotel enterprises in the San Francisco (California) Bay area. Its focus is on identification and instruction of literacy skills essential to job success for limited-English-proficient (LEP) workers. Training is intended to enable employees to understand written work orders,…

  14. No room at the inn: a snapshot of an American emergency room.

    PubMed

    Olson, E J

    1994-01-01

    The emergency rooms of American hospitals have frequently become the principal suppliers of nonurgent primary care to the under- and uninsured. Canvassing published reports and using original data obtained from a representative urban hospital, Erik Olson examines the demographics of the American emergency room and analyzes its finances. The costs of providing primary care are shifted, to the extent possible, to those who can pay. The result is escalating health care costs and a deterioration of quality of care due to overcrowding, leading some hospitals to close their emergency rooms and others to turn away ambulances or "dump" patients who still require critical care. Mr. Olson explains that state antidumping laws and the federal COBRA statute have been ineffective at stemming these practices in the face of severe economic pressure to continue them. Pointing out that emergency rooms are an excessively expensive method of treating uninsured nonemergency patients, he proposes a system of primary care clinics created through a public/private partnership between municipalities and existing private health care providers. The partnership is designed to maintain a high standard of care at the clinics. As an incentive to stimulate the appearance of such clinics, a tax would be imposed on private health care providers; the tax on a given provider would be reduced to the extent that provider subsidizes a local primary care clinic that offers universal coverage, regardless of insurance status. Because the existence of such clinics would reduce inefficient use of hospital emergency rooms, in the long run hospitals should find it less expensive to finance local primary care clinics than to continue to sustain unreimbursed expenses due to improper use of their emergency departments.

  15. Materials Data on Nd3InN (SG:221) by Materials Project

    SciTech Connect

    Kristin Persson

    2016-04-22

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  16. Conference on New Processes for Braille Manufacture (Ramada Inn, Boston, Massachusetts, May 18-19, 1967).

    ERIC Educational Resources Information Center

    Massachusetts Inst. of Tech., Cambridge. Sensory Aids Evaluation and Development Center.

    Proceedings from a conference on braille production and services are summarized. Only equipment which is ready for use is considered. Specific methods of producing braille discussed include the following: use of plates from a stereograph, computer line printer, braille embossers or braille writers, continuous strip embossed tape from a teletype…

  17. Project EXCEL: Holiday Inn at Union Square, Housekeeping Department. Safety and Security, Module 2.

    ERIC Educational Resources Information Center

    Career Resources Development Center, Inc., San Francisco, CA.

    Project EXCEL is a federally-funded workplace literacy program involving hotel enterprises in the San Francisco (California) Bay area. Its focus is on identification and instruction of literacy skills essential to job success for limited-English-proficient (LEP) workers. Training is intended to enable employees to understand written work orders,…

  18. Solar hot water system installed at Days Inn Motel, Jacksonville, Florida

    NASA Astrophysics Data System (ADS)

    1980-09-01

    The solar system was designed to provide 65 percent of the hot water demand. Water in the liquid flat plate collector (900 square feet) system automatically drains into the 1000 gallon lined and vented steel storage tank when the pump is not running. Heat is transferred from storage to Domestic Hot Water (DHW) tanks through a tube and shell heat exchanger. A circulating pump between the DHW tanks and heat exchanger enables solar heated water to help make up DHW standby losses. All pumps are controlled by differential temperature.

  19. Investigation of oxygen defects in wurtzite InN by using density functional theory

    NASA Astrophysics Data System (ADS)

    Hattori, Y.; Chubaci, J. F. D.; Matsuoka, M.; Freitas, J. A.; da Silva, A. Ferreira

    2016-12-01

    Density Functional Theory based on ab initio calculations was employed to investigate single and complex defects of oxygen in indium nitride and their influence on the optical properties. Different oxygen contents (x=1.38%, 4.16%, 5.55% and 11.11%) were considered in our study by using PBEsol-GGA and TB-mBJ for the treatment of exchange-correlation energy and potential. It was found that oxygen is energetically favorable to exist mainly as singly charged isolated defect. The results using TB-mBJ approximation predicts a narrowing of the VBM (valence band maximum) and CBM (conduction band minimum) as oxygen content increases. Nevertheless, the larger contribution of the Moss-Burstein effect leads to an effective band-gap increase, yielding absorption edge values larger than that of the intrinsic bulk indium nitride.

  20. Electrical and optical properties of InN with periodic metallic in insertions

    SciTech Connect

    Komissarova, T. A. Shubina, T. V.; Jmerik, V. N.; Ivanov, S. V.; Ryabova, L. I.; Khokhlov, D. R.; Vasson, A.; Leymarie, J.; Araki, T.; Nanishi, Y.

    2009-03-15

    We report on a growth by molecular beam epitaxy of InN:In semiconductor/metal composite structures containing periodically inserted arrays of In clusters formed by intentional deposition of In metal films in a thickness range of 2-48 monolayers. It was found that indium insertions do not change markedly carrier mobility in the composites, that remains in the 1300-1600 cm{sup 2}/(V s) range, while carrier concentration increases with rising In amount. Spectra of thermally detected optical absorption do not exhibit a noticeable Burstein-Moss shift of a principal absorption edge with increasing the carrier concentration, but rather complicated modification of their shapes.

  1. Materials Data on InN (SG:216) by Materials Project

    SciTech Connect

    Kristin Persson

    2016-02-10

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  2. Antioxidant potential of commercially available cumin (Cuminum cyminuml inn) in Pakistan.

    PubMed

    Bukhari, S Birjees; Iqbal, Shahid; Bhanger, M I

    2009-05-01

    Owing to increased safety concerns about synthetic antioxidants, exploitation of safer antioxidants based on natural origin is the focus of research nowadays. Cumin is a common spice and is used as a routine supportive cooking agent. Extracts of cumin were prepared in methanol, ethanol, dichloromethane and hexane by employing Soxhlet extraction apparatus. Determination of the total phenolic content, chelating activity, reducing power and free radical scavenging activity were taken as parameters for the assessment of antioxidant properties. The findings of this study suggest cumin to be a potent source of antioxidants. Results from the different parameters were in agreement with one another.

  3. Sport Psychology Training in Counseling Psychology Programs: Is There Room at the Inn?

    ERIC Educational Resources Information Center

    Petrie, Trent A.; Watkins, C. Edward, Jr.

    1994-01-01

    Surveyed 53 counseling psychology programs about sport psychology training. Found that most respondents had students who were interested in sport psychology; counseling faculty were perceived to be receptive to their colleagues and graduate students having interests and pursuing research in sport psychology; and most program directors thought best…

  4. Materials Data on InN (SG:186) by Materials Project

    DOE Data Explorer

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  5. Materials Data on Nd3InN (SG:221) by Materials Project

    DOE Data Explorer

    Kristin Persson

    2016-02-11

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  6. Materials Data on La3InN (SG:221) by Materials Project

    DOE Data Explorer

    Kristin Persson

    2016-02-11

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  7. Materials Data on Pr3InN (SG:221) by Materials Project

    DOE Data Explorer

    Kristin Persson

    2016-02-11

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  8. Materials Data on InN (SG:225) by Materials Project

    DOE Data Explorer

    Kristin Persson

    2014-07-09

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  9. Solar hot water system installed at Day's Inn Motel, Savannah, Georgia

    NASA Astrophysics Data System (ADS)

    1980-09-01

    The Solar System was designed to provide 50 percent of the total Domestic Hot Water (DHW) demand. Liquid Flat Plate Collectors (900 square feet) are used for the collector subsystem. The collector subsystem is closed loop, using 50 percent Ethylene Glycol solution antifreeze for freeze protection. The 1,000 gallon fiber glass storage tank contains two heat exchangers. One of the heat exchangers heats the storage tank with the collector solar energy. The other heat exchanger preheats the cold supply water as it passes through on the way to the Domestic Hot Water (DHW) tank heaters. Electrical energy supplements the solar energy for the DHW. The Collector Mounting System utilizes guy wires to structurally tie the collector array to the building.

  10. The Place Where Hope Lives: The Children's Inn Comforts Kids and Their Families

    MedlinePlus

    ... wouldn't accept that scenario. To get better access to top doctors, the O'Hallorans moved to the Gainesville, Fla., area. They also started clicking away on the Internet, determined to become cystinosis experts. Their online sleuthing ...

  11. Materials Data on Ti3InN (SG:221) by Materials Project

    SciTech Connect

    Kristin Persson

    2016-02-05

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  12. High pressure structural, electronic and vibrational properties of InN and InP

    NASA Astrophysics Data System (ADS)

    Panchal, J. M.; Joshi, Mitesh; Gajjar, P. N.

    2016-03-01

    A first-principles plane wave self-consistent method with the Ultrasoftpseudopotential scheme in the framework of density functional theory is performed to study the high pressure structural, electronic and vibrational properties of InX (X = N, P) for the zinc-blende (ZnS/B3), rock-salt (NaCl/B1) and cesium-chloride (CsCl/B2) phases. We also calculate the phase transition pressures among these different phases. Conclusions based on electronic energy band structure, phonon dispersion and phonon density of states at high pressure phases along phase transition regions are outlined.

  13. InN Thin Film Lattice Dynamics by Grazing Incidence Inelastic X-Ray Scattering

    NASA Astrophysics Data System (ADS)

    Serrano, J.; Bosak, A.; Krisch, M.; Manjón, F. J.; Romero, A. H.; Garro, N.; Wang, X.; Yoshikawa, A.; Kuball, M.

    2011-05-01

    Achieving comprehensive information on thin film lattice dynamics so far has eluded well established spectroscopic techniques. We demonstrate here the novel application of grazing incidence inelastic x-ray scattering combined with ab initio calculations to determine the complete elastic stiffness tensor, the acoustic and low-energy optic phonon dispersion relations of thin wurtzite indium nitride films. Indium nitride is an especially relevant example, due to the technological interest for optoelectronic and solar cell applications in combination with other group III nitrides.

  14. Annual Review of BPA-Funded Anadromous Fish Projects, March 18-20, 1986, Holiday Inn Airport, Portland, Oregon.

    SciTech Connect

    United States. Bonneville Power Administration.

    1986-02-01

    This report contains descriptions of projects specifically related to anadromous salmonids. They include projects in the following categories: (1) fish and wildlife projects in western Montana; (2) fish health and physiology; (3) habitat enhancement and passage improvement - Oregon I; (4) passage improvement and natural propagation - Washington; (5) habitat enhancement and passage improvements - Oregon II; (6) future hydroelectric assessments; (7) habitat enhancement and passage improvement - Idaho; (8) downstream migration: flows and monitoring; (9) downstream migration: reservoir impacts; and (10) habitat evaluation and monitoring. (ACR)

  15. Making Room at the Inn: Implications of "Christian Legal Society v. Martinez" for Public College and University Housing Professionals

    ERIC Educational Resources Information Center

    Waggoner, Michael D.; Russo, Charles J.

    2014-01-01

    The supreme court's ruling in "Christian Legal Society v. Martinez", its most important case to date on student associational activities, upheld a policy at a public law school in California that required recognized student organizations (or clubs) to admit "all-comers" even if they disagreed with organizational goals and…

  16. Making Room at the Inn: Implications of "Christian Legal Society v. Martinez" for Public College and University Housing Professionals

    ERIC Educational Resources Information Center

    Waggoner, Michael D.; Russo, Charles J.

    2014-01-01

    The supreme court's ruling in "Christian Legal Society v. Martinez", its most important case to date on student associational activities, upheld a policy at a public law school in California that required recognized student organizations (or clubs) to admit "all-comers" even if they disagreed with organizational goals and…

  17. Proceedings of the Navy Symposium on Aeroballistics (10th) Held at the Sheraton Motor Inn Fredericksburg, Virginia on 15-16-17 July 1975. Volume 3

    DTIC Science & Technology

    1975-07-17

    parameters on the particle condi- tions at impact. In addition to particle encapsulation, the effects of particle size , initial velocity and range...dimensional, the spherical particle was initially transformed to a cubic particle of equivalent volume. The initial width of the particle (to) was...the rate of deformation of the particle through the shock layer is independent of the initial size of the particle. The size independence shows that

  18. Proceedings of the Navy Symposium on Aeroballistics (10th) Held at the Sheraton Motor Inn, Fredericksburg, Virginia on 15-16-17 July 1975. Volume 1

    DTIC Science & Technology

    1975-07-17

    question raised by the 1974 Nicolet tests was whether even this yaw level would be sufficient to result in a short at the launch Mach numbers, from 0.919...of trimming a missile to large angles of attack and producing high levels of maneuverability. As an example, these features are very attractive for...which neglects compressibility. Tne results of this study should yield more accurate methods of determining vortex trajectories, a question of prime

  19. Proceedings from the Annual Army Environmental R&D Symposium (16th) Held 23-25 June 1992 at Fort Magruder Inn and Conference Center, Williamsburg, Virginia

    DTIC Science & Technology

    1992-06-01

    thin metal film . When aluminum parts are coated , nitrogen gas is introduced into the chamber during the operation to cool the aluminum parts and...sacrificial corrosion resistance. The ceramic sealcoat is a painted-on protective coating that is usually heat-cured. It forms a solid film and is often used...on top of aluminum- filled base coats . Primers, topcoats, and sealants provide solid film protective coatings . Materials used include epoxies

  20. Abstracts. 1978 AFOSR Contractors Meeting on Air-Breathing Combustion Dynamics and Kinetics, Ramada Inn-Downtown Dayton, Ohio, 10 - 13 October 1978

    DTIC Science & Technology

    1978-10-13

    the model has been developed through compar- ison with data. In addition, a multiphase turbulent reacting flow module has been formulated to accommodate...Mixing, Ignition and Combustion in R.B. Edelman, P.T. Harsha Flowing Reacting Fuel-Air Mixtures Sciences Applications, Inc. (F49620-77-C-0044) 2:55 8...4:35 11 Flow Flame Interactions and M. Gerstein Transient Flame Phenomena Univ. of Southern California (APOsR-77-3 354) 5:00 ADJOURN 11 Oct. 78

  1. Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer

    SciTech Connect

    El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Ortaç, Bülend; Alevli, Mustafa; Dietz, Nikolaus; Okyay, Ali K.

    2014-06-23

    In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al{sub 2}O{sub 3} layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V{sub gate} measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4 V, the memory shows a noticeable threshold voltage (V{sub t}) shift of 2 V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5 V is achieved and the V{sub t} shift direction indicates that electrons tunnel from channel to charge storage layer.

  2. Growth, nitrogen vacancy reduction and solid solution formation in cubic GaN thin films and the subsequent fabrication of superlattice structures using AIN and InN

    NASA Astrophysics Data System (ADS)

    Davis, Robert F.

    1992-02-01

    An atomic layer epitaxy deposition system configured for the growth of thin films of the III-V nitrides of Al, Ga and In has been designed, constructed and commissioned. The system allows the introduction of up to 16 gases without mixing. Self-terminating growth of crystalline GaN films has been achieved on single crystal wafers of (0001) alpha(6H)-SiC. Results of analyses via Auger spectroscopy, electron microscopy and electron diffraction are described. Deposition of AlN and GaN via gas-source MBE was also continued during this period. The principal emphasis concerned the initial stages of growth of both compounds on the substrates of (00001) alpha(6H)-SiC and (0001) sapphire, as determined using X-ray photoelectron spectroscopy. An initial layer of silicon nitride formed on the surface of SiC prior to the deposition of either nitride. The deposition of GaN on sapphire followed the Stranski-Krastanov mode of nucleation and growth, while on SiC, characteristics of three-dimensional growth were evident. By contrast, AlN grew initially in a layer-by-layer mode. Deposition of GaN on vicinal (100) Beta-SiC during UV irradiation resulted in the formation of a new 4H polytype of this material. Deposition of BN via gas-source MBE on Cu(110) resulted in nanocrystalline cBN; films grown on (111) Cu resulted in h-BN (graphitic phase). Similar studies using Si(100) substrates also resulted in the occurrence of cBN. The occurrence of the cubic polytype was enhanced while that of h-BN was discouraged with the use of the UV light at 400-500 C.

  3. Proceedings of the Navy Symposium on Aeroballistics (10th) Held at the Sheraton Motor Inn, Fredericksburg, Virginia, on 15-16-17 July 1975. Volume 2

    DTIC Science & Technology

    1975-07-17

    White Oak Laboratory Silver Spring, Maryland i 1 ~ i. I. *This work was supported by the Naval Air Systems Command, AIR 320 : 425 ~ A 10th Navy Symposlum... Air Force, Army, other government agjincics. ivertz’ mt d from industry. It is our hope that wr can provide a pleasant atmospheie for you ’mIn ng lou - 1 ...663-7646 KALIVRETENOS, C. A. KUSTER, F. A. Naval Surface Weapons Center Advanced Missile Project Office White Oak Laboratory Naval Air Development

  4. Proposed re-evaluation of the 154Eu thermal (<i>n>, γ) capture cross-section based on spent fuel benchmarking studies

    SciTech Connect

    Skutnik, Steven E.

    2016-09-22

    154Eu is a nuclide of considerable importance to both non-destructive measurements of used nuclear fuel assembly burnup as well as for calculating the radiation source term for used fuel storage and transportation. But, recent evidence from code validation studies of spent fuel benchmarks have revealed evidence of a systemic bias in predicted 154Eu inventories when using ENDF/B-VII.0 and ENDF/B-VII.1 nuclear data libraries, wherein Eu-154 is consistently over-predicted on the order of 10% or more. Further, this bias is found to correlate with sample burnup, resulting in a larger departure from experimental measurements for higher sample burnups. Here, the bias in Eu-154 is characterized across eleven spent fuel destructive assay benchmarks from five different assemblies. Based on these studies, possible amendments to the ENDF/B-VII.0 and VII.1 evaluations of the 154Eu (n,γ)155Eu are explored. By amending the location of the first resolved resonance for the 154Eu radiative capture cross-section (centered at 0.195 eV in ENDF/B-VII.0 and VII.1) to 0.188 eV and adjusting the neutron capture width proportional to $\\sqrt1/E$, the amended cross-section evaluation was found to reduce the bias in predicted 154Eu inventories by approximately 5–7%. And while the amended capture cross-section still results in a residual over-prediction of 154Eu (ranging from 2% to 9%), the effect is substantially attenuated compared with the nominal ENDF/B-VII.0 and VII.1 evaluations.

  5. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AIN and InN

    DTIC Science & Technology

    1992-02-01

    IK AD-A248 058 - - H Final Technical ReportI I Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the...structural and chemical analyses, there is no reason to believe that a homogeneous solid solution close to this composition had formed. Moreover

  6. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AIN and InN

    DTIC Science & Technology

    1992-12-01

    AD-A258 804 Final Technical Report Ii Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent...Technical 6/1/86-12/31/92 4. TITLE AND SUBTITLE Growth, Nitrogen Vacancy Reduction and 5. FUNDING NUMBERS Solid Solution Formation in Cubic GaN Thin...According to the structural and chemical analyses, there is no reason to believe that a homogeneous solid solution close to this composition had

  7. ETL/EPA Workshop on Open Burning/Open Detonation (OB/OD) (Broker Inn, Boulder, Colorado 15-16 February 1995)

    DTIC Science & Technology

    1996-04-01

    the Front Range. 4DDA reduced errors in the predicted 3-D mesoscale flow fields. 4.1.2 Diffusion scheme "The Gaussian Puff Model SCIPUFF ," Dr. R. Ian...Closure Integrated Puff ( SCIPUFF ) model uses turbulence closure theory to represent diffusion, and a generalized moment tensor to describe wind-shear...Advantages of the SCIPUFF algorithm are that it is relatively fast, especially when compared with Lagrangian particle type schemes, and highly accurate

  8. The SpaceInn-SISMA Database: Characterization of a Large Sample of Variable and Active Stars by Means of Harps Spectra

    NASA Astrophysics Data System (ADS)

    Rainer, M.; Poretti, E.; Mistò, A.; Panzera, M. R.; Molinaro, M.; Cepparo, F.; Roth, M.; Michel, E.; Monteiro, M. J. P. F. G.

    2016-12-01

    We created a large database of physical parameters and variability indicators by fully reducing and analyzing the large number of spectra taken to complement the asteroseismic observations of the COnvection, ROtation and planetary Transits (CoRoT) satellite. 7103 spectra of 261 stars obtained with the ESO echelle spectrograph HARPS have been stored in the VO-compliant database Spectroscopic Indicators in a SeisMic Archive (SISMA), along with the CoRoT photometric data of the 72 CoRoT asteroseismic targets. The remaining stars belong to the same variable classes of the CoRoT targets and were observed to better characterize the properties of such classes. Several useful variability indicators (mean line profiles, indices of differential rotation, activity and emission lines) together with v\\sin i and radial-velocity measurements have been extracted from the spectra. The atmospheric parameters {T}{eff},{log}g, and [Fe/H] have been computed following a homogeneous procedure. As a result, we fully characterize a sample of new and known variable stars by computing several spectroscopic indicators, also providing some cases of simultaneous photometry and spectroscopy.

  9. Quantum spin Hall effect and topological phase transition in InN x Bi y Sb1-x-y /InSb quantum wells

    NASA Astrophysics Data System (ADS)

    Song, Zhigang; Bose, Sumanta; Fan, Weijun; Zhang, Dao Hua; Zhang, Yan Yang; Shen Li, Shu

    2017-07-01

    Quantum spin Hall (QSH) effect, a fundamentally new quantum state of matter and topological phase transitions are characteristics of a kind of electronic material, popularly referred to as topological insulators (TIs). TIs are similar to ordinary insulator in terms of their bulk bandgap, but have gapless conducting edge-states that are topologically protected. These edge-states are facilitated by the time-reversal symmetry and they are robust against nonmagnetic impurity scattering. Recently, the quest for new materials exhibiting non-trivial topological state of matter has been of great research interest, as TIs find applications in new electronics and spintronics and quantum-computing devices. Here, we propose and demonstrate as a proof-of-concept that QSH effect and topological phase transitions can be realized in {{InN}}x{{Bi}}y{{Sb}}1-x-y/InSb semiconductor quantum wells (QWs). The simultaneous incorporation of nitrogen and bismuth in InSb is instrumental in lowering the bandgap, while inducing opposite kinds of strain to attain a near-lattice-matching conducive for lattice growth. Phase diagram for bandgap shows that as we increase the QW thickness, at a critical thickness, the electronic bandstructure switches from a normal to an inverted type. We confirm that such transition are topological phase transitions between a traditional insulator and a TI exhibiting QSH effect—by demonstrating the topologically protected edge-states using the bandstructure, edge-localized distribution of the wavefunctions and edge-state spin-momentum locking phenomenon, presence of non-zero conductance in spite of the Fermi energy lying in the bandgap window, crossover points of Landau levels in the zero-mode indicating topological band inversion in the absence of any magnetic field and presence of large Rashba spin-splitting, which is essential for spin-manipulation in TIs.

  10. Clinical and histological evaluation of an analogue of palmitoylethanolamide, PLR 120 (comicronized Palmidrol INN) in cats with eosinophilic granuloma and eosinophilic plaque: a pilot study.

    PubMed

    Scarampella, F; Abramo, F; Noli, C

    2001-02-01

    Fifteen cats with eosinophilic granuloma or eosinophilic plaque were given PLR 120 at the dosage of 10 mg kg-1 twice daily for one month. PLR-120 down-modulates mast cell degranulation via a receptor-mediated mechanism. No other drugs were permitted and cats were kept free of parasites throughout the study. A clinical evaluation and skin biopsies were performed before and after the treatment. Clinical improvement was assessed at 15 and 30 days. Mast cell numbers were counted and their granular content was assessed by densitometric analysis on toluidine blue-stained sections before and after the treatment. Ten of 15 (67%) cats showed clinical improvement of signs and lesions. There was no significant difference between mast cell numbers in skin biopsies taken before and after the trial, whereas the number of granules was significantly increased (P < 0.009). This pilot study suggests that PLR-120 might be a useful drug for the treatment of eosinophilic granuloma and eosinophilic plaque.

  11. Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys

    NASA Astrophysics Data System (ADS)

    Morales, F. M.; Mánuel, J. M.; García, R.; Reuters, B.; Kalisch, H.; Vescan, A.

    2013-06-01

    Structural and compositional data were collected for several high-quality strained InGaN, InAlN, AlGaN and InAlGaN layers with various compositions. Based on these results, the InN/AlN/GaN molar fractions of every film were indirectly estimated by the application of Vegard's law (Vegard 1921 Z. Phys. 5 17) to lattice and elastic constants of the binaries and by an alternative approach proposed by (Williams et al 1978 J. Electron. Mater. 7 639) (even considering possible mistakes in its application). True compositions were independently assessed by x-ray spectroscopy or Rutherford backscattering spectrometry. The results of both interpolation models are highlighted in utilizable contour and surface ternary plots of lattice constants and biaxial strain relaxation coefficients calculated for the whole compositional range. Calculated compositions from Vegard's law best fit the measured values. Finally, it is geometrically demonstrated that there are wrong assumptions in the Williams et al model, so that Vegard's law should only be used to successfully determine the compositions of ternary and quaternary III-N nitrides.

  12. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    DTIC Science & Technology

    1991-12-01

    were resistively heated either with Ta or W alloy wire heaters The gallium cell was loaded with 50 g of 99.999 999% pure gallium.3 The special high...E. Kaxiras, and R. M. Trump , Phys. Rev. Lett. 63(6), 632 (1989). 63. D. Heskett, A. Baddorf, and E. W. Plumrnmer, Surf. Sci. 195(1-2), 94 (1988). 64...traditional applications such as a hard coating for machining I ferrous metals. For a complete listing of materials-related properties of c-BN see Landot- 3

  13. Breast-feeding and complementary feeding practices in the first 6 months of life among Norwegian-Somali and Norwegian-Iraqi infants: the InnBaKost survey.

    PubMed

    Grewal, Navnit Kaur; Andersen, Lene Frost; Sellen, Daniel; Mosdøl, Annhild; Torheim, Liv Elin

    2016-03-01

    To examine breast-feeding and complementary feeding practices during the first 6 months of life among Norwegian infants of Somali and Iraqi family origin. A cross-sectional survey was performed during March 2013-February 2014. Data were collected using a semi-quantitative FFQ adapted from the second Norwegian national dietary survey among infants in 2006-2007. Somali-born and Iraqi-born mothers living in eastern Norway were invited to participate. One hundred and seven mothers/infants of Somali origin and eighty mothers/infants of Iraqi origin participated. Breast-feeding was almost universally initiated after birth. Only 7 % of Norwegian-Somali and 10 % of Norwegian-Iraqi infants were exclusively breast-fed at 4 months of age. By 1 month of age, water had been introduced to 30 % of Norwegian-Somali and 26 % of Norwegian-Iraqi infants, and infant formula to 44 % and 34 %, respectively. Fifty-four per cent of Norwegian-Somali and 68 % of Norwegian-Iraqi infants had been introduced to solid or semi-solid foods at 4 months of age. Breast-feeding at 6 months of age was more common among Norwegian-Somali infants (79 %) compared with Norwegian-Iraqi infants (58 %; P=0·001). Multivariate analyses indicated no significant factors associated with exclusive breast-feeding at 3·5 months of age. Factors positively associated with breast-feeding at 6 months were country of origin (Somalia) and parity (>2). Breast-feeding initiation was common among Iraqi-born and Somali-born mothers, but the exclusive breast-feeding period was shorter than recommended in both groups. The study suggests that there is a need for new culture-specific approaches to support exclusive breast-feeding and complementary feeding practices among foreign-born mothers living in Norway.

  14. High-pressure CVD Growth of InN and Indium-rich Group III-nitride Compound Semiconductors for Novel Mid- and Far-infrared Detectors and Emitters

    DTIC Science & Technology

    2010-02-01

    polarity of Group III-nitride crystals. A higher concentration of indium in InGaN/GaN quantum wells (QW) results in more strain and more polarization36...fluctuation) induced localized states in the InGaN layers play major roles in achieving highly efficient blue and green InGaN multiple quantum wells (MQW...the phase segregation process in dissimilar materials, or  the formation of straight or compositional graded quantum wells . p. 15 Figure 10

  15. Satellite Instrument Calibration for Measuring Global Climate Change. Report of a Workshop at the University of Maryland Inn and Conference Center, College Park, MD. , November 12-14, 2002

    NASA Technical Reports Server (NTRS)

    Ohring, G.; Wielicki, B.; Spencer, R.; Emery, B.; Datla, R.

    2004-01-01

    Measuring the small changes associated with long-term global climate change from space is a daunting task. To address these problems and recommend directions for improvements in satellite instrument calibration some 75 scientists, including researchers who develop and analyze long-term data sets from satellites, experts in the field of satellite instrument calibration, and physicists working on state of the art calibration sources and standards met November 12 - 14, 2002 and discussed the issues. The workshop defined the absolute accuracies and long-term stabilities of global climate data sets that are needed to detect expected trends, translated these data set accuracies and stabilities to required satellite instrument accuracies and stabilities, and evaluated the ability of current observing systems to meet these requirements. The workshop's recommendations include a set of basic axioms or overarching principles that must guide high quality climate observations in general, and a roadmap for improving satellite instrument characterization, calibration, inter-calibration, and associated activities to meet the challenge of measuring global climate change. It is also recommended that a follow-up workshop be conducted to discuss implementation of the roadmap developed at this workshop.

  16. The Nature of the Dimethyl-aluminum (-gallium and -indium) Methylphenylamide Dimers in Solution and the Molecular Structure of (CH3)2 InN (CH3)- (C6H5)2.

    DTIC Science & Technology

    1981-03-16

    by evaluating the effects of solvent and temperature on the cis/trans isomer ratios. All data are consistent with the hypotheses that the aluminum...investigated by IH NMR spectroscopy by evaluating the effects of solvent and temperature on the cis/trans isomer ratios. All data are consistent with...essentially independent of the nature of the nonreactive solvent . 3𔃾 Thus, [(CH 3 )2AIN(CH3)(C6Hs) 2 exists as an 83%/17% mixture of cis/trans isomers in

  17. Growth, nitrogen vacancy reduction, and solid solution formation in cubic GaN thin films and the subsequent fabrication of superlattice structures using AlN and InN

    NASA Astrophysics Data System (ADS)

    Davis, Robert F.; Ailey-Trent, K. S.; Kester, Daniel; Paisley, Michael J.; Perry, Bill

    1992-06-01

    Undoped GaN films have been deposited by gas-source MBE having essentially intrinsic electrical character. Acceptor-type behavior has been achieved with Mg doping. The electrical properties of these latter films were resistivity = 0.5 omega-cm, Hall mobility (holes = 10 sq cm/V-s and carrier concentration = 1(10)(exp 18) cu cm. Photo-assisted gas-source MBE growth of stoichiometric GaN was also achieved using a 500 W Hg lamp. Illumination and Ga cell temperature altered the texture of the polycrystalline GaN in unusual ways, changing the growth habit from (0001) is parallel to (100) to (0001) is parallel to (111) and back again. Thin films of cubic-BN (c-BN) were also deposited on various substrates via both gas-source MBE and electron beam MBE. The use of Si(100) substrates, the latter technique, and the characterization tools of RHEED, XPS, LEED, SEM, FTIR, and HRTEM resulted in the achievement of an initial amorphous BN layer followed by a layer of turbostratic BN and subsequently by a layer of cubic BN. Cubic BN films were also deposited on polycrystalline diamond films grown via CVD on Si(100). The effect of the bombarding species was examined. Finally, the plans for both a systematic investigation of the ion implantation and contact development and related characterization of AlN and GaN with n- and p-type dopants and the construction and employment of a UV luminescence facility is discussed.

  18. Healing Arts Therapies and Person-Centred Dementia Care Healing Arts Therapies and Person-Centred Dementia Care Anthea Innes and Hatfield Karen (editors) Jessica Kingsley 137pp £13.95 1 84310 038X 184310038X.

    PubMed

    2002-06-01

    Reading this digestible good practice guide, one is struck by the sheer enthusiasm of the contributors both on paper and in the descriptions of their 'therapies'. The authors are absolutely committed to their own specialties, and desire that we are as persuaded as they by the psychotherapeutic impact of the healing arts in dementia care. This evangelism becomes a little wearing after a while and the case studies that flesh out the meaning of what is observed feel a little too neat. The book suffers a little for its American influences and expectations. One feels that all environments are assumed to have daily access to music/drama/art therapists.

  19. Satellite Instrument Calibration for Measuring Global Climate Change. Report of a Workshop at the University of Maryland Inn and Conference Center, College Park, MD. , November 12-14, 2002

    NASA Technical Reports Server (NTRS)

    Ohring, G.; Wielicki, B.; Spencer, R.; Emery, B.; Datla, R.

    2004-01-01

    Measuring the small changes associated with long-term global climate change from space is a daunting task. To address these problems and recommend directions for improvements in satellite instrument calibration some 75 scientists, including researchers who develop and analyze long-term data sets from satellites, experts in the field of satellite instrument calibration, and physicists working on state of the art calibration sources and standards met November 12 - 14, 2002 and discussed the issues. The workshop defined the absolute accuracies and long-term stabilities of global climate data sets that are needed to detect expected trends, translated these data set accuracies and stabilities to required satellite instrument accuracies and stabilities, and evaluated the ability of current observing systems to meet these requirements. The workshop's recommendations include a set of basic axioms or overarching principles that must guide high quality climate observations in general, and a roadmap for improving satellite instrument characterization, calibration, inter-calibration, and associated activities to meet the challenge of measuring global climate change. It is also recommended that a follow-up workshop be conducted to discuss implementation of the roadmap developed at this workshop.

  20. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    DTIC Science & Technology

    1990-07-01

    that the BGaN film remained predominantly single crystal, but shows both a normal cubic [110] pattern and a second hexagonal pattern [0110]. By contrast...27 Transmission electron microscopy (iEM) was used (Hitachi H-800) to more closely examine the microstructural evolution of the BN/ BGaN /GaN epitaxial...area diffraction (SAD) also showed the BGaN layer to be a mixture of cubic and wurtzitic phases. This layer was heavily faulted. The latter phenomenon

  1. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and Subsequent Fabrication of Superlattice Structures Using AlN and InN

    DTIC Science & Technology

    1990-12-01

    Laboratories, Inc. 3. Structural Analysis Reflection high-energy electron diffraction performed during growth indicated that the BGaN film remained...was used (Hitachi H-800) to more closely examine the microstructural evolution of the BN/ BGaN /GaN epitaxial films. Cross-section TEM specimens were... BGaN layer to be a mixture of cubic and wurtzitic phases. This layer was heavily faulted. The latter phenomenon is to be expected given the high

  2. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    DTIC Science & Technology

    1991-06-01

    p PTIC (AD-A238 521 Semi-Annual Letter Report Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the...SUBTITLE Growth, Nitrogen Vacancy Reduction and S. FUNDING NUMBERS solid Solution Formation in Cubic GaN Thin Films and the R&T:s40000lsrqO5 Subsequent

  3. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    DTIC Science & Technology

    1992-06-01

    AD-A253 331 Semiannual Report Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication...Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using...34 substrates, such as using a graded AlxGal-xN solid solution as a buffer layer. E. Conclusion We have shown that in the use of our modified gas source MBE

  4. Multicenter Phase II Study Evaluating Two Cycles of Docetaxel, Cisplatin and Cetuximab as Induction Regimen Prior to Surgery in Chemotherapy-Naive Patients with NSCLC Stage IB-IIIA (INN06-Study)

    PubMed Central

    Hilbe, Wolfgang; Pall, Georg; Kocher, Florian; Pircher, Andreas; Zabernigg, August; Schmid, Thomas; Schumacher, Michael; Jamnig, Herbert; Fiegl, Michael; Gächter, Anne; Freund, Martin; Kendler, Dorota; Manzl, Claudia; Zelger, Bettina; Popper, Helmut; Wöll, Ewald

    2015-01-01

    Background Different strategies for neoadjuvant chemotherapy in patients with early stage NSCLC have already been evaluated. The aim of this study was to evaluate the tolerability and efficacy of a chemoimmunotherapy when limited to two cycles. Methods Between 01/2007 and 03/2010 41 patients with primarily resectable NSCLC stage IB to IIIA were included. Treatment consisted of two cycles cisplatin (40 mg/m2 d1+2) and docetaxel (75 mg/m2 d1) q3 weeks, accompanied by the administration of cetuximab (400 mg/m2 d1, then 250 mg weekly). The primary endpoint was radiological response according to RECIST. Results 40 patients were evaluable for toxicity, 39 for response. The main grade 3/4 toxicities were: neutropenia 25%, leucopenia 11%, febrile neutropenia 6%, nausea 8% and rash 8%. 20 patients achieved a partial response, 17 a stable disease, 2 were not evaluable. 37 patients (95%) underwent surgery and in three of them a complete pathological response was achieved. At a median follow-up of 44.2 months, 41% of the patients had died, median progression-free survival was 22.5 months. Conclusions Two cycles of cisplatin/ docetaxel/ cetuximab showed promising efficacy in the neoadjuvant treatment of early-stage NSCLC and rapid operation was possible in 95% of patients. Toxicities were manageable and as expected. Trial Registration EU Clinical Trials Register; Eudract-Nr: 2006-004639-31 PMID:26020783

  5. Nanoscale imaging of InN segregation and polymorphism in single vertically aligned InGaN/GaN multi quantum well nanorods by tip-enhanced Raman scattering.

    PubMed

    Poliani, E; Wagner, M R; Reparaz, J S; Mandl, M; Strassburg, M; Kong, X; Trampert, A; Sotomayor Torres, C M; Hoffmann, A; Maultzsch, J

    2013-07-10

    Vertically aligned GaN nanorod arrays with nonpolar InGaN/GaN multi quantum wells (MQW) were grown by MOVPE on c-plane GaN-on-sapphire templates. The chemical and structural properties of single nanorods are optically investigated with a spatial resolution beyond the diffraction limit using tip-enhanced Raman spectroscopy (TERS). This enables the local mapping of variations in the chemical composition, charge distribution, and strain in the MQW region of the nanorods. Nanoscale fluctuations of the In content in the InGaN layer of a few percent can be identified and visualized with a lateral resolution below 35 nm. We obtain evidence for the presence of indium clustering and the formation of cubic inclusions in the wurtzite matrix near the QW layers. These results are directly confirmed by high-resolution TEM images, revealing the presence of stacking faults and different polymorphs close to the surface near the MQW region. The combination of TERS and HRTEM demonstrates the potential of this nanoscale near-field imaging technique, establishing TERS as a very potent, comprehensive, and nondestructive tool for the characterization and optimization of technologically relevant semiconductor nanostructures.

  6. 1. GENERAL VIEW OF ROUTE 209 LOOKING NORTH SHOWING SLEEPING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. GENERAL VIEW OF ROUTE 209 LOOKING NORTH SHOWING SLEEPING BEAR INN, SLEEPING BEAR INN GARAGE AND DORMITORY, D.H. DAY STORE, RESTROOM, AND GARAGE - Glen Haven Historic District, Route 209, Glen Arbor, Leelanau County, MI

  7. 18. Dining room at southwest corner of building, view to ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. Dining room at southwest corner of building, view to west. Scale stick visible against west wall, next to woman. - Deetjen's Big Sur Inn, Big Sur Inn Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  8. 39. DINING ROOM, LOOKING (NORTH) BACK TOWARD ENTRANCE. BEFORE 1907, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    39. DINING ROOM, LOOKING (NORTH) BACK TOWARD ENTRANCE. BEFORE 1907, GUESTS AT THE INN ATE FAMILY-STYLE AT LONG RECTANGULAR TABLES. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  9. 75 FR 65263 - Virginia Graeme Baker Pool and Spa Safety Act; Public Accommodation; Withdrawal of Proposed Rule

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-22

    ... inn, hotel, motel, or other place of lodging, except for an establishment located within a building... ``public accommodations facility'' as ``an inn, hotel, motel, or other place of lodging, including but not... proposed interpretive rule would interpret ``public accommodations facility'' to mean: ``An inn, hotel...

  10. Efficacy and safety of AEZS-108 (INN: zoptarelin doxorubicin acetate) an LHRH agonist linked to doxorubicin in women with platinum refractory or resistant ovarian cancer expressing LHRH receptors: a multicenter phase II trial of the ago-study group (AGO GYN 5).

    PubMed

    Emons, Günter; Gorchev, Grigor; Sehouli, Jalid; Wimberger, Pauline; Stähle, Anne; Hanker, Lars; Hilpert, Felix; Sindermann, Herbert; Gründker, Carsten; Harter, Philipp

    2014-06-01

    To evaluate the activity and toxicity of AEZS-108 (Zoptarelin Doxorubicin Acetate) an LHRH agonist linked to doxorubicin in women with platinum refractory or resistant ovarian cancer expressing LHRH receptors. Women with epithelial ovarian, fallopian tube or primary peritoneal cancer, expressing LHRH receptors were eligible for this trial, when they had progression during treatment with a platinum based regimen or within 6months after receiving a platinum based regimen and a previous taxane treatment. At least one measurable target lesion (RECIST) or CA-125 levels higher than twice the upper limit of normal range (GCIG-criteria) were required. Patients received AEZS-108 (267mg/m(2) equimolar to 76.8mg/m(2) of free doxorubicin) every 3weeks as a two hour i.v. infusion. Fifty-five of 59 (93%) of ovarian cancer samples screened expressed LHRH receptors. 42 patients were enrolled in this study and received at least 1 infusion of AEZS-108 (ITT population). Of these 42 patients 6 (14.3%) had a partial response, 16 (38%) stable disease, 16 (38%) progressive disease and 4 patients were not evaluable. Median time to progression was 12weeks (95% CI: 8-20weeks), and median overall survival was 53weeks (95% CI: 39-73weeks). Toxicity profile was favorable. AEZS-108 has a clinical activity in platinum refractory/resistant ovarian cancer which seems to be comparable to that of pegylated liposomal doxorubicin or to topotecan. Toxicity was comparably low. These data support the concept of a targeted chemotherapy for tumors expressing LHRH receptors. Copyright © 2014 Elsevier Inc. All rights reserved.

  11. 17. Dining area of lobby/dining room, view to southsoutheast. Scale ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. Dining area of lobby/dining room, view to south-southeast. Scale stick visible at left against corner of pillar; 5'10" figure for additional scale reference. - Deetjen's Big Sur Inn, Big Sur Inn Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  12. 34. THE CROW'S NEST. IN THE EARLY YEARS OF THE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    34. THE CROW'S NEST. IN THE EARLY YEARS OF THE INN MUSICIANS SAT AND PLAYED FOR THE GUESTS IN THE LOBBY BELOW. THE EARTHQUAKE IN 1959 CAUSED SOME STRUCTURAL DAMAGE AND NOW THE CROW'S NEST IS NOT ACCESSIBLE TO THE PUBLIC. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  13. 26. LOBBY, LOOKING NORTH TOWARD MAIN ENTRANCE FROM SECOND FLOOR. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    26. LOBBY, LOOKING NORTH TOWARD MAIN ENTRANCE FROM SECOND FLOOR. LOCAL LODGEPOLE PINE WHICH WAS VALUED FOR ITS INVARIABLE DIAMETER WAS USED TO CONSTRUCT THE COLUMNS AND BEAMS OF THE INN WHILE GNARLED OR DISEASED LOGS WERE SELECTED FOR THE BRACES AND BALUSTERS. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  14. 18. LOOKING SOUTH AT STEEPLY PITCHED, GABLED ROOF. THE UPPER ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. LOOKING SOUTH AT STEEPLY PITCHED, GABLED ROOF. THE UPPER DORMERS PROVIDE LIGHT IN THE LOBBY AND THE LOWER DORMERS OPEN INTO SOME OF THE ORIGINAL GUEST ROOMS IN THE INN. (TAKEN FROM CHERRY- PICKER) - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  15. Something of Value: How Franchise Sellers Make Training Pay

    ERIC Educational Resources Information Center

    Berger, Gladys

    1975-01-01

    Training can be the most important benefit included in the purchase of a franchise. Several of these training programs used by franchise sellers (Castro Convertibles, Roto-Rooter, H and R Block, Dunhill Personnel Systems Inc., Carvel, Holiday Inns, Sheraton Inns Inc., McDonald's) are discussed. (Author/BP)

  16. Generic drug names and social welfare.

    PubMed

    Lobo, Félix; Feldman, Roger

    2013-06-01

    This article studies how well International Nonproprietary Names (INNs), the "generic" names for pharmaceuticals, address the problems of imperfect information. Left in private hands, the identification of medicines leads to confusion and errors. Developed in the 1950s by the World Health Organization, INNs are a common, global, scientific nomenclature designed to overcome this failure. Taking stock after sixty years, we argue that the contribution of INNs to social welfare is paramount. They enhance public health by reducing errors and improving patient safety. They also contribute to economic efficiency by creating transparency as the foundation of competitive generic drug markets, reducing transaction costs, and favoring trade. The law in most countries requires manufacturers to designate pharmaceuticals with INNs in labeling and advertising. Generic substitution is also permitted or mandatory in many countries. But not all the benefits of INNs are fully realized because prescribers may not use them. We advocate strong incentives or even legally binding provisions to extend the use of INNs by prescribing physicians and dispensing pharmacists, but we do not recommend replacing brand names entirely with INNs. Instead, we propose dual use of brand names and INNs in prescribing, as in drug labeling.

  17. 77 FR 25228 - Petition for Waiver of Compliance

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-27

    ... public crossing, Power Inn Road (DOT 752887F), can be deemed an acceptable supplementary safety measure (SSM). The Power Inn Road crossing is equipped with flashing lights, gates, and medians that comply... that the posted highway speed limit is 45 mph instead of 40 mph, as required in the definition. A copy...

  18. 2. Historic American Buildings Survey, Copy of an eary photograph, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    2. Historic American Buildings Survey, Copy of an eary photograph, courtesy of Montgomery County Historical Society, Norristown, Pa., THE KING OF PRUSSIA INN, c.1880. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  19. 1. Historic American Buildings Survey, Copy of an eary photograph, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. Historic American Buildings Survey, Copy of an eary photograph, courtesy of Montgomery County Historical Society, Norristown, Pa., THE KING OF PRUSSIA INN, c.1860-1870. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  20. The Economic Evaluation of Alternatives (EEoA): Rethinking the Application of Cost-effectiveness Analysis, Multi-criteria Decision-making (MCDM) and the Analysis of Alternatives (AoA) in Defense Procurement

    DTIC Science & Technology

    2009-04-22

    Outsourcing Travel (2005 Vendor Sales to the Federal Government) Airlines 2005 ($mil) Market share United $846 25% Delta $718 21% American $491 14.4% Hotels ...2005 ($mil) Market share Marriot $146 7.3% Holiday Inn $141 7.0% Residence Inn $125 6.3% Cars 2005 ($mil) Market share Hertz $76 20.2% Enterprise $56 15

  1. Irreversible thermochromism in copper chloride Imidazolium Nanoparticle Networks.

    PubMed

    Kronstein, Martin; Kriechbaum, Konstantin; Akbarzadeh, Johanna; Peterlik, Herwig; Neouze, Marie-Alexandra

    2013-08-14

    In this work Imidazolium Nanoparticle Networks (INNs) with chloride counter-ions were used to complex copper dichloride. This complexation reaction leads to the formation of a green material. The properties of the copper INN material were compared to: first, copper imidazolium complexes, without the presence of silica nanoparticles, which are not thermochromic; second, chloride-containing INN material. The copper INN material showed irreversible thermochromic behaviour, with a clear colour change from green to yellow at 180 °C, which is due to a configuration change of the copper complex from planar to tetragonal. This structural change was studied using DSC and in situ SAXS measurements during heat treatment. The thermochromic material is stable under air up to 250 °C. This preliminary study opens the door of optical sensors for INN materials.

  2. Changes to International Nonproprietary Names for antibody therapeutics 2017 and beyond: of mice, men and more.

    PubMed

    Parren, Paul W H I; Carter, Paul J; Plückthun, Andreas

    Active pharmaceutical substances require an International Nonproprietary Name (INN) assigned by the World Health Organization (WHO) to obtain market authorization as a medicinal product. INNs are selected to represent a unique, generic name for a drug enabling unambiguous identification by stakeholders worldwide. INNs may be requested after initiating clinical development of an investigational drug. Pharmaceutical classes are indicated by a common stem or suffix. Currently, INNs for monoclonal antibody-based drugs are recognized by the suffix, -mab, preceded by a source infix such as -xi- (chimeric), -zu- (humanized) or -u- (human) designating the species from which the antibody was derived. However, many technological advances have made it increasingly difficult to accurately capture an antibody's source in its name. In 2014, the WHO and the United States Adopted Names (USAN) Council approached this challenge by implementing changes to antibody source infix definitions. Unfortunately, gaps and ambiguities in the definitions and procedures resulted in inconsistent source category assignments and widespread confusion. The Antibody Society, extensively supported by academic and industry scientists, voiced concerns leading to constructive dialog during scheduled consultations with WHO and USAN Council representatives. In June 2017, the WHO announced that use of the source infix will be discontinued for new antibody INNs effective immediately. We fully support this change as it better aligns antibody INNs with current and foreseeable future innovations in antibody therapeutics. Here we review the changes implemented. Additionally, we analyzed antibody INNs recently assigned under the previous 2014 definitions and provide recommendations for further alignment.

  3. An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

    PubMed Central

    Alvi, Naveed ul Hassan; Gómez, Victor J.; Rodriguez, Paul E.D. Soto; Kumar, Praveen; Zaman, Saima; Willander, Magnus; Nötzel, Richard

    2013-01-01

    Low-dimensional InN/InGaN quantum dots (QDs) are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications. PMID:24132228

  4. Attitudes of physicians and pharmacists towards International Non-proprietary Name prescribing in Belgium.

    PubMed

    Van Bever, Elien; Elseviers, Monique; Plovie, Marijke; Vandeputte, Lieselot; Van Bortel, Luc; Vander Stichele, Robert

    2015-03-01

    International Non-proprietary Name (INN) prescribing is the use of the name of the active ingredient(s) instead of the brand name for prescribing. In Belgium, INN prescribing began in 2005 and a major policy change occurred in 2012. The aim was to explore the opinions of Dutch-speaking general practitioners (GPs) and pharmacists. An electronic questionnaire with 39 five-point Likert scale statements and one open question was administered in 2013. Multivariate analysis was performed with multiple linear regression on a sum score for benefit statements and for drawback statements. Answers to the open question were qualitatively analysed. We received 745 valid responses with a representable sample for both subgroups. Participants perceived the motives to introduce INN prescribing as purely economic (to reduce pharmaceutical expenditures for the government and the patient). Participants accepted the concept of INN prescribing, but 88% stressed the importance of guaranteed treatment continuity, especially in older, chronic patients, to prevent patient confusion, medication non-adherence and erroneous drug use. In conclusion, the current way in which INN prescribing is applied in Belgium leads to many concerns among primary health professionals about patient confusion and medication adherence. Slightly adapting the current concept of INN prescribing to these concerns can turn INN prescribing into one of the major policies in Belgium to reduce pharmaceutical expenditures and to stimulate rational drug prescribing. © 2014 Nordic Association for the Publication of BCPT (former Nordic Pharmacological Society).

  5. 38. DINING ROOM, THE CHIMNEY WAS SEVERELY DAMAGED BY AN ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    38. DINING ROOM, THE CHIMNEY WAS SEVERELY DAMAGED BY AN EARTHQUAKE IN 1959 AND HAD TO BE RECONSTRUCTED. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  6. 6. Historic American Buildings Survey Robert W. Kerrigan, Photographer August ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. Historic American Buildings Survey Robert W. Kerrigan, Photographer August 24, 1936 INTERIOR DETAIL WEST WALL OF SOCIAL HALL - Trocadero Inn, Sigmund Stern Grove, San Francisco, San Francisco County, CA

  7. MEG source localization using invariance of noise space.

    PubMed

    Zhang, Junpeng; Raij, Tommi; Hämäläinen, Matti; Yao, Dezhong

    2013-01-01

    We propose INvariance of Noise (INN) space as a novel method for source localization of magnetoencephalography (MEG) data. The method is based on the fact that modulations of source strengths across time change the energy in signal subspace but leave the noise subspace invariant. We compare INN with classical MUSIC, RAP-MUSIC, and beamformer approaches using simulated data while varying signal-to-noise ratios as well as distance and temporal correlation between two sources. We also demonstrate the utility of INN with actual auditory evoked MEG responses in eight subjects. In all cases, INN performed well, especially when the sources were closely spaced, highly correlated, or one source was considerably stronger than the other.

  8. 76 FR 75560 - National Register of Historic Places; Notification of Pending Nominations and Related Actions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-02

    ... Dr., Beverly Hills, 11000933 Marin County West Point Inn, Old RR grade, Mt. Tamalpais, Mill Valley..., Bounded by Holt, S. 1st, S. 5th, Austin, E. Wilson, & Roosevelt Sts., Mebane, 11000953 Cleveland County...

  9. 77 FR 69638 - Eunice Kennedy Shriver National Institute of Child Health & Human Development; Notice of Closed...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-20

    ...: The Holiday Inn Express, 1775 Rockville Pike, Rockville, MD 20852. Contact Person: David H. Weinberg..., 301-435-6973, David.Weinberg@nih.gov . (Catalogue of Federal Domestic Assistance Program Nos....

  10. 18. Photocopy of photograph (original print at Riverside Library, Local ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. Photocopy of photograph (original print at Riverside Library, Local History Collection), photographer and date unknown. VIEW OF MISSION INN, SEVENTH STREET ENTRANCE - California Citrus Heritage Recording Project, Riverside, Riverside County, CA

  11. 7. Historic American Buildings Survey (Fed.) Stanley P. Mixon, Photographer ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. Historic American Buildings Survey (Fed.) Stanley P. Mixon, Photographer Sept 16, 1940 (G) EXTERIOR, DETAIL OF OLD TAVERN SIGN (ENGLISH SIDE) WITH PAINTED LION - Captain Arah Phelphs Inn, Colebrook, Litchfield County, CT

  12. 9. Oblique view northwest of east elevation at northeast corner ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    9. Oblique view northwest of east elevation at northeast corner of building; previous view taken at corner visible at extreme right. - Deetjen's Big Sur Inn, Hayloft Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  13. 77 FR 1941 - Center For Scientific Review; Amended Notice of Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-12

    ... Notice is hereby given of a change in the meeting of the Macromolecular Structure and Function A Study Section, February 2, 2012, 8 a.m. to February 2, 2012, 7 p.m., George Washington University Inn, 824 New...

  14. 75 FR 17767 - National Register of Historic Places; Notification of Pending Nominations and Related Actions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-07

    ... of Commerce Building, 1201 Lincoln Ave, Steamboat Springs, 10000217 MAINE Penobscot County University... Drovers Inn and Round Family Residence, 2 Pumphouse Rd and 301 Main St, Vestal, 10000222 Cayuga County...

  15. 10. GENERAL VIEW OF 'BIG RAILWAY' SHOWING CRADLE AND WINCH ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    10. GENERAL VIEW OF 'BIG RAILWAY' SHOWING CRADLE AND WINCH MANUFACTURED BY MEAD-MORRISON MANUFACTURING COMPANY, HAVING A 450 TON CAPACITY - Anderson-Christofani Shipyard, Innes Avenue & Griffith Street, San Francisco, San Francisco County, CA

  16. 75 FR 23288 - Notice of Public Meeting, Southwest Colorado Resource Advisory Council Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-03

    ... 184, Dolores, Colorado 81323; August 13, 2010, at the Holiday Inn Express at 910 E. Tomichi, Gunnison... Junction, CO; telephone 970-244-3097. SUPPLEMENTARY INFORMATION: The Southwest Colorado RAC advises...

  17. 15. Detail, view northeast across second floor deck. Scale visible ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. Detail, view northeast across second floor deck. Scale visible at right of door opening into 'Fireplace' room. 'Van Gogh' room at left. - Deetjen's Big Sur Inn, Hayloft Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  18. 75 FR 2467 - Hours of Service

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-15

    ...: The January 28 meeting will be held in Davenport, Iowa, at the Comfort Inn Hotel and Suites, 8300... present additional enforcement challenges? 3. How is the current restart provision being used by drivers...

  19. 6. Historic American Buildings Survey W. N. Manning, Photographer, May ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. Historic American Buildings Survey W. N. Manning, Photographer, May 15, 1935. DOOR TREATMENT IN DINING ROOM, N. ROOM - Irwinton Inn, Ferrell's Gardens, 105 Riverside Drive, Eufaula, Barbour County, AL

  20. Collagen vascular disease

    MedlinePlus

    ... GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelley and Firestein's Textbook of Rheumatology . ... this important distinction for online health information and services. Learn more about A.D.A.M.'s editorial ...

  1. Baker cyst

    MedlinePlus

    ... GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelley's Textbook of Rheumatology . 9th ed. ... Sports Medicine and Shoulder Service, UCSF Department of Orthopaedic Surgery, San Francisco, CA. ...

  2. Mallet finger - aftercare

    MedlinePlus

    ... GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelly's Textbook of Rheumatology . 9th ed. ... Physician at FDR Medical Services / Millard Fillmore Suburban Hospital, Buffalo, NY. Also reviewed ...

  3. Lupus anticoagulants and antiphospholipid antibodies

    MedlinePlus

    ... GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelley and Firestein's Textbook of Rheumatology . ... this important distinction for online health information and services. Learn more about A.D.A.M.'s editorial ...

  4. Creatine phosphokinase test

    MedlinePlus

    ... GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelley's Textbook of Rheumatology . 9th ed. ... this important distinction for online health information and services. Learn more about A.D.A.M.'s editorial ...

  5. Reactive arthritis

    MedlinePlus

    ... GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelley's Textbook of Rheumatology . 9th ed. ... this important distinction for online health information and services. Learn more about A.D.A.M.'s editorial ...

  6. Culture - joint fluid

    MedlinePlus

    ... GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelly and Firestein's Textbook of Rheumatology . ... this important distinction for online health information and services. Learn more about A.D.A.M.'s editorial ...

  7. Familial Mediterranean fever

    MedlinePlus

    ... GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelly's Textbook of Rheumatology . 9th ed. ... this important distinction for online health information and services. Learn more about A.D.A.M.'s editorial ...

  8. Knee pain

    MedlinePlus

    ... GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelley and Firestein's Textbook of Rheumatology . ... Ma, MD, Professor, Chief, Sports Medicine and Shoulder Service, UCSF Department of Orthopaedic Surgery, San Francisco, CA. ...

  9. Hereditary amyloidosis

    MedlinePlus

    ... GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelley's Textbook of Rheumatology . 9th ed. ... this important distinction for online health information and services. Learn more about A.D.A.M.'s editorial ...

  10. De Quervain tendinitis

    MedlinePlus

    ... GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelly's Textbook of Rheumatology . 9th ed. ... Physician at FDR Medical Services / Millard Fillmore Suburban Hospital, Buffalo, NY. Also reviewed ...

  11. View southwest of "New Room" taken from doorway; windows overlook ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    View southwest of "New Room" taken from doorway; windows overlook Castro Creek Canyon. Scale visible against end wall - Deetjen's Big Sur Inn, Antique Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  12. 12 CFR 723.21 - Definitions.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... property. Example 2. A loan to convert a movie theater into a restaurant is a construction or development loan. A loan to convert a large Victorian home used for residential purposes into a six-room inn also...

  13. 78 FR 75939 - Bay Delta Habitat Conservation Plan and Natural Community Conservation Plan, Sacramento, CA...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-13

    ..., and reducing future risks to the Delta from earthquakes, levee failure, and climate change. National.... Tuesday, January 28, 2014, 5 p.m. to 9 p.m., Hilton Garden Inn, 2200 Gateway Court, Fairfield, CA 94533....

  14. Menopausal Symptoms and Complementary Health Practices

    MedlinePlus

    ... site for more information on various herbal products . Mind and Body Practices Only a small amount of research has ... 60–74. Innes KE, Selfe TK, Vishnu A. Mind-body therapies for menopausal symptoms: a systematic review. Maturitas. ...

  15. 3. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    3. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 NORTHEAST ELEVATION. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  16. 10. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    10. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 MANTEL (NOT ORIGINAL) SOUTHEAST PARLOR. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  17. 14. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 INTERIOR DETAIL, SOUTHEAST BEDROOM. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  18. 7. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 SOUTH (FRONT) ELEVATION. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  19. 4. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 SOUTHWEST ELEVATION. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  20. 28. LOBBY, LOOKING EAST FROM THE THIRD FLOOR. THE OBELISK ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    28. LOBBY, LOOKING EAST FROM THE THIRD FLOOR. THE OBELISK SHAPED FIREPLACE IS FULLY VISIBLE AT THE RIGHT. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  1. MEG Source Localization Using Invariance of Noise Space

    PubMed Central

    Zhang, Junpeng; Raij, Tommi; Hämäläinen, Matti; Yao, Dezhong

    2013-01-01

    We propose INvariance of Noise (INN) space as a novel method for source localization of magnetoencephalography (MEG) data. The method is based on the fact that modulations of source strengths across time change the energy in signal subspace but leave the noise subspace invariant. We compare INN with classical MUSIC, RAP-MUSIC, and beamformer approaches using simulated data while varying signal-to-noise ratios as well as distance and temporal correlation between two sources. We also demonstrate the utility of INN with actual auditory evoked MEG responses in eight subjects. In all cases, INN performed well, especially when the sources were closely spaced, highly correlated, or one source was considerably stronger than the other. PMID:23505502

  2. The Place Where Hope Lives

    MedlinePlus

    ... and their families. Children need the comfort and security of their families—especially when they are being treated for a life-threatening illness far from home. The Children's Inn is a private, non-profit, ...

  3. 78 FR 26379 - National Cancer Institute; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-06

    ... Branch, Division of Extramural Activities, National Cancer Institute, NIH, 9609 Medical Center Drive....D., Scientific Review Officer, Research Programs Review Branch, Division of Extramural Activities.... Agenda: To review and evaluate grant applications. Place: Hilton Garden Inn and Homewood Suites,...

  4. 75 FR 59276 - National Heart, Lung, and Blood Institute; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-27

    ... grant applications and the discussions could disclose confidential trade secrets or commercial property... Holiday Inn Select), 8120 Wisconsin Avenue, Bethesda, MD 20814. Contact Person: Holly K. Krull, PhD...

  5. Chemical Reactions at Surfaces. Final Progress Report

    SciTech Connect

    2003-02-21

    The Gordon Research Conference (GRC) on Chemical Reactions at Surfaces was held at Holiday Inn, Ventura, California, 2/16-21/03. Emphasis was placed on current unpublished research and discussion of the future target areas in this field.

  6. Growth and morphology of 0.80 eV photoemitting indium nitride nanowires

    SciTech Connect

    Johnson, M.C.; Lee, C.J.; Bourret-Courchesne, E.D.; Konsek, S.L.; Aloni, S.; Han, W.Q.; Zettl, A.

    2004-08-13

    InN nanowires with high efficiency photoluminescence emission at 0.80 eV are reported for the first time. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50-100nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the <0001> direction. The group-III nitrides have become an extremely important technological material over the past decade. They are commonly used in optoelectronic devices, such as high brightness light-emitting diodes (LEDs) and low wavelength laser diodes (LDs), as well as high power/high frequency electronic devices. Recently InN thin films grown by MOCVD and MBE were found to have a bandgap energy in the range of 0.7-0.9 eV, much lower than the value of {approx}1.9 eV found for InN films grown by sputtering. This large decrease in the direct bandgap transition energy and the ability to form ternary (InGaN) and quaternary (AlInGaN) alloys increases the versatility of group-III nitride optoelectronic devices, ranging from the near IR to the UV. Additionally, InN has some promising transport and electronic properties. It has the smallest effective electron mass of all the group-III nitrides which leads to high mobility and high saturation velocity10 and a large drift velocity at room temperature. As a result of these unique properties, there has been a large increase in interest in InN for potential use in optoelectronic devices, such as LDs and high efficiency solar cells, as well as high frequency/high power electronic devices.

  7. Solar hot water system installed at Las Vegas, Nevada. Final report

    SciTech Connect

    1981-01-01

    The solar hot water system installed at LaQuinta Motor Inn Inc., at Las Vegas, Nevada is described. The Inn is a three-story building with a flat roof for installation of the solar panels. The system consists of 1200 square feet of liquid flat plate collectors, a 2500 gallon insulated vertical steel storage tank, two heat exchangers and pumps and controls. The system was designed to supply approximately 74 percent of the total hot water load.

  8. Proceedings of the Annual Conference on Ada (Trademark) Technology (2nd) Held at Hampton, Virginia on March 27, 28, 1984.

    DTIC Science & Technology

    1984-03-01

    Falls, NJ 5 Kernel System-K. Gilroy, Harris Corp., M elbourne, FL ......................... 74 Tidewater Room-Sheraton Inn Military Computer Family...1984-2:00 PM-5:15 PM Chairperson: Dr. Arthur Jones, Morehouse Col- Holiday Room-Holiday Inn lege, Atlanta. GA Mathematical Subroutine Packages For...Interface for Ada Instruc- and E. R. Comer, Harris Corp., Melbourne, tors-O. C. Fuhr, Tuskegee Institute, FL ................................... 115

  9. Solar hot water system installed at Las Vegas, Nevada

    NASA Technical Reports Server (NTRS)

    1981-01-01

    A solar energy hot water system installed in a motor inn at Las Vegas, Nevada is described. The inn is a three story building with a flat roof for installation of the solar panels. The system consists of 1,200 square feet of liquid flat plate collectors, a 2,500 gallon insulated vertical steel storage tank, two heat exchangers, and pumps and controls. The system was designed to supply approximately 74 percent of the total hot water load.

  10. New Bedford, Review of New Bedford Remedial Action Master ...

    EPA Pesticide Factsheets

    2012-04-22

    ... 'I , ill inn ii 1 1 ih II 11 1, II ll , I II II II II II II II I, I I, II III „ II MI III III IMIIIIII II III 1 1 1 II II nil Hi" II nil, i Ii 11, 1,11 1 LI II, I I II. ... II ill inn, ill II I in , II i Ml I II 1 II nil I II ...

  11. Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates

    NASA Astrophysics Data System (ADS)

    Liang, C. H.; Chen, L. C.; Hwang, J. S.; Chen, K. H.; Hung, Y. T.; Chen, Y. F.

    2002-07-01

    This letter reports the synthesis of indium nitride (InN) nanowires on gold-patterned silicon substrates in a controlled manner using a method involving thermal evaporation of pure indium. The locations of these InN nanowires were controlled by depositing gold in desired areas on the substrates. Scanning electron microscopy and transmission electron microscopy investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 80 nm, and lengths up to 5 mum. Energy dispersive x-ray spectrometry showed that the ends of the nanowires are composed primarily of Au, and the rest of the nanowires were InN with no detectable Au incorporations. The Raman spectra showed peaks at 445, 489, and 579 cm-1, which are attributed to the A1(transverse optical), E2, and A1(longitudinal optical) phonon modes of the wurtzite InN structure, respectively. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 1.85 eV.

  12. Properties of inductively coupled N2 plasma processed AlInN thin film prepared by post annealing of rf sputtered Al/InN stack

    NASA Astrophysics Data System (ADS)

    Shanmugan, S.; Mutharasu, D.

    2016-12-01

    InN is a potential material for low cost tandem solar cells and its combination with Si could make the cell conversion efficiency over 30%. Doping into InN is a promising method which alters the properties of InN thin film. In this work, InN thin film was deposited on Si substrate and the doping was achieved by stacking Al elemental layer on InN thin film followed by annealing process. The doped InN (AlInN) thin film was characterized and confirmed the formation of (002) and (103) oriented phases. The prepared AlInN thin film was plasma processed using Inductively coupled plasma (ICP) in presence of N2 gas and the surface and structural properties was modified. The N2 plasma was influenced the preferred orientation of AlInN thin film and their structural parameters such as crystallite size, strain and dislocation density noticeably. Very smooth surface (<4 nm) with small particle size (97 nm) of AlInN thin film was achieved for 15 sccm flow rate during the plasma process. Very low value in leakage current was confirmed for AlInN thin film processed at 15 sccm N2 flow by current-voltage (IV) characteristics.

  13. Plasma-assisted molecular beam epitaxy growth and properties of indium-face indium nitride

    NASA Astrophysics Data System (ADS)

    Gallinat, Chad Stephen

    In this work, the PAMBE growth of high-quality InN films was developed. Using the in situ growth analysis tools, RHEED and line-of-site quadrupole mass spectrometry (QMS), the thermal decomposition of both Inand N-face InN was explored to determine attainable growth temperatures and growth rate limitations. Surface structure growth diagrams were constructed for both In- and N-face InN. In-face InN was shown to have only two growth regimes below 500ºC--the In-droplet regime and the N-rich regime. Attempts to grow beyond 500ºC resulted in In-droplet accumulation with no InN growth. Both In- and N-face InN exhibited the smoothest surface morphologies and lowest dislocation densities for films grown with excess In. The dependence of electrical transport properties on growth conditions were studied for In-face InN. An accumulation of electrons with a density of 5.1 x 1013 cm-2 was measured at the sample surface due to occupied surface states above the bulk conduction band minimum. This surface accumulation layer interfered with direct Hall measurements of bulk carriers, but a two-layer Hall model was used to extract bulk electron concentrations and mobilities. Even when accounting for this surface accumulation layer, all of the InN films exhibited a degenerate level of unintentionally doped (UID) n-type bulk conductivity. Films grown at the highest substrate temperatures with excess In had the lowest electron concentration and highest electron mobility. The UID electron concentration was shown to originate from impurity incorporation. A correlation between electron concentration and dislocation density was not observed, but dislocations were shown to limit the electron mobility in the InN films. The control of n-type conductivity in InN was demonstrated using a combination of Si-doping, variable growth temperature, and Mg-doping. The electron concentrations were controlled over a range of three orders of magnitude, with Mg-doped films demonstrating bulk electron

  14. Strategies to indium nitride and gallium nitride nanoparticles: Low-temperature, solution-phase and precursor routes

    NASA Astrophysics Data System (ADS)

    Dingman, Sean Douglas

    I present new strategies to low-temperature solution-phase synthesis of indium and gallium nitride (InN and GaN) ceramic materials. The strategies include: direct conversion of precursor molecules to InN by pyrolysis, solution-phase synthesis of nanostructured InN fibers via molecular precursors and co-reactants, and synthesis of powders through reactions derived from molten-salt chemistry. Indium nitride powders are prepared by pyrolysis of the precursors R 2InN3 (R = t-Bu (1), i-Amyl(2), Et(3), i-Pr( 4)). The precursors are synthesized via azide-alkoxide exchange of R2InOMe with Me3SiN3. The precursors are coordination polymers containing five-coordinate indium centers. Pyrolysis of 1 and 2 under N2 at 400°C yields powders consisting primarily of InN with average crystal sizes of 15--35 nm. 1 yields nanocrystalline InN with average particle sizes of 7 nm at 250°C. 3 and 4 yield primarily In metal from pyrolysis. Refluxing 1 in diisopropylbenzene (203°C) in the presence of primary amines yields InN nanofibers 10--100 nm in length. InN nanofibers of up to 1 mum can be synthesized by treating 1 with 1,1-dimethylhydrazine (DMHy) The DMHy appears to control the fiber length by acting as a secondary source of active nitrogen in order to sustain fiber growth. The resulting fibers are attached to droplets of indium metal implying a solution-liquid-solid growth mechanism. Precursor 4 yields crystalline InN whiskers when reacted with DMHy. Reactions of 4 with reducing agents such as HSnBu3, yield InN nanoparticles with an average crystallite size of 16 nm. Gallium precursors R2GaN3 (R = t-Bu( 5), Me3SiCH2(6) and i-Pr( 7)), synthesized by azide-alkoxide exchange, are found to be inert toward solution decomposition and do not yield GaN. These compounds are molecular dimers and trimers unlike the indium analogs. Compound 6 displays a monomer-dimer equilibrium in benzene solution, but exists as a solid-state trimer. InN powders are also synthesized by reactions of InCl3 and

  15. Crystallographic analysis of human hemoglobin elucidates the structural basis of the potent and dual antisickling activity of pyridyl derivatives of vanillin

    SciTech Connect

    Abdulmalik, Osheiza; Ghatge, Mohini S.; Musayev, Faik N.; Parikh, Apurvasena; Chen, Qiukan; Yang, Jisheng; Nnamani, Ijeoma; Danso-Danquah, Richmond; Eseonu, Dorothy N.; Asakura, Toshio; Abraham, Donald J.; Venitz, Jurgen; Safo, Martin K.

    2011-11-01

    Pyridyl derivatives of vanillin increase the fraction of the more soluble oxygenated sickle hemoglobin and/or directly increase the solubility of deoxygenated sickle hemoglobin. Crystallographic analysis reveals the structural basis of the potent and dual antisickling activity of these derivatives. Vanillin has previously been studied clinically as an antisickling agent to treat sickle-cell disease. In vitro investigations with pyridyl derivatives of vanillin, including INN-312 and INN-298, showed as much as a 90-fold increase in antisickling activity compared with vanillin. The compounds preferentially bind to and modify sickle hemoglobin (Hb S) to increase the affinity of Hb for oxygen. INN-312 also led to a considerable increase in the solubility of deoxygenated Hb S under completely deoxygenated conditions. Crystallographic studies of normal human Hb with INN-312 and INN-298 showed that the compounds form Schiff-base adducts with the N-terminus of the α-subunits to constrain the liganded (or relaxed-state) Hb conformation relative to the unliganded (or tense-state) Hb conformation. Interestingly, while INN-298 binds and directs its meta-positioned pyridine-methoxy moiety (relative to the aldehyde moiety) further down the central water cavity of the protein, that of INN-312, which is ortho to the aldehyde, extends towards the surface of the protein. These studies suggest that these compounds may act to prevent sickling of SS cells by increasing the fraction of the soluble high-affinity Hb S and/or by stereospecific inhibition of deoxygenated Hb S polymerization.

  16. Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    SciTech Connect

    Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi; Itoi, Takaomi; Yoshikawa, Akihiko

    2016-04-11

    The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  17. Evaluation of the impact of TMIn flow rate on the structural and optical properties of InN/ZnO heterojunctions using RF-MOMBE

    NASA Astrophysics Data System (ADS)

    Chen, Wei-Chun; Chen, Hung-Pin; Kuo, Shou-Yi; Lai, Fang-I.; Hsiao, Chien-Nan; Lee, Cheng-Chung

    2017-10-01

    Indium nitride (InN) films were deposited on Al2O3 substrates with a zinc oxide (ZnO) interlayer using by radio-frequency metalorganic molecular beam epitaxy (RF-MOMBE). We evaluated the impact of the flow rate of trimethylindium (In(CH3)3, TMIn) on the structure, surface morphology, and optical and electrical properties of the films using X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV-Vis spectroscopy, and Hall measurements. The XRD results indicated that all InN films were formed from single-phase wurtzite crystals with the preferred orientations along the c-axis. The SEM images indicated that the rough surfaces of the InN films grown with TMIn flow rates less than 0.55 sccm. The TEM images showed that InN and ZnO had hexagonal structures (wurtzite) that were epitaxially grown by RF-MOMBE on the substrates. The electron concentrations ranged from 7.3 × 1019 to 2.56 × 1020 cm-3 of the InN films were measured.

  18. Carrier localization in InN/InGaN multiple-quantum wells with high In-content

    NASA Astrophysics Data System (ADS)

    Valdueza-Felip, S.; Rigutti, L.; Naranjo, F. B.; Ruterana, P.; Mangeney, J.; Julien, F. H.; González-Herráez, M.; Monroy, E.

    2012-08-01

    We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 μm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of ˜12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN.

  19. Advanced Computational Modeling of Vapor Deposition in a High-Pressure Reactor

    NASA Technical Reports Server (NTRS)

    Cardelino, Beatriz H.; Moore, Craig E.; McCall, Sonya D.; Cardelino, Carlos A.; Dietz, Nikolaus; Bachmann, Klaus

    2004-01-01

    In search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.

  20. High-efficiency InN-based quantum dot solar cells for defense applications

    NASA Astrophysics Data System (ADS)

    Welser, Roger E.; Sood, Ashok K.; Puri, Yash R.; Laboutin, Oleg A.; Guido, Louis J.; Dhar, Nibir K.; Wijewarnasuriya, Priyalal S.

    2010-04-01

    Nitride semiconductors possess a number of unique material properties applicable to energy harvesting photovoltaic devices, including a large range of energy gaps, superior radiation resistance, and tolerance to high temperatures. We present here our experimental results related to the self-assembled InN quantum dots formed on Si substrates. We have been successful at synthesizing InN quantum dots using the metal-organic chemical vapor deposition (MOCVD) process. We demonstrate the synthesis of a high density of InN dots exhibiting excellent structural and optical properties. An unprecedented range of absorption energies, ranging from the infrared to the ultraviolet, can be obtained by embedding InN-based quantum dots in a wide band gap GaN barrier. The combination of energy-gaps accessible to III-V nitride materials may be used to reap the benefits of advance quantum dot device concepts involving hot carrier effects or multiple carrier generation processes.

  1. Chemical synthesis of hexagonal indium nitride nanocrystallines at low temperature

    NASA Astrophysics Data System (ADS)

    Wang, Liangbiao; Shen, Qianli; Zhao, Dejian; Lu, Juanjuan; Liu, Weiqiao; Zhang, Junhao; Bao, Keyan; Zhou, Quanfa

    2017-08-01

    In this study, hexagonal indium nitride nanocystallines with high crystallinity have been prepared by the reaction of InCl3·4H2O, sulfur and NaNH2 in an autoclave at 160 °C. The crystal structures and morphologies of the obtained InN sample are characterized by X-ray diffraction and scanning electron microscope. As InCl3·4H2O is substituted by In(NO3)3·4.5H2O, InN nanocrystallines could also be obtained by using the similar method. The photoluminescence spectrum shows that the InN emits a broad peak positioned at 2.3 eV.

  2. Nanobranched porous palladium-tin intermetallics: One-step synthesis and their superior electrocatalysis towards formic acid oxidation

    NASA Astrophysics Data System (ADS)

    Sun, Dandan; Si, Ling; Fu, Gengtao; Liu, Chang; Sun, Dongmei; Chen, Yu; Tang, Yawen; Lu, Tianhong

    2015-04-01

    Nanocrystalline intermetallics in bulk with high surface area hold enormous promise as an efficient catalyst for real fuel cell applications due to their unique electrocatalytic properties. In this work, a novel three-dimensional (3D) porous Pd-Sn intermetallics in network nanostructures (Pd-Sn-INNs) has been fabricated at relatively low temperature for the first time by one-step ethylene glycol-assisted hydrothermal reduction method. The structure characteristics of the Pd-Sn-INNs are confirmed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray (EDX), selected-area electron diffraction (SAED), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The as-prepared 3D Pd-Sn-INNs exhibit remarkably improved electrocatalytic activity and stability towards formic acid oxidation reaction (FAOR) over commercially available Pd black.

  3. Advanced Computational Modeling of Vapor Deposition in a High-pressure Reactor

    NASA Technical Reports Server (NTRS)

    Cardelino, Beatriz H.; Moore, Craig E.; McCall, Sonya D.; Cardelino, Carlos A.; Dietz, Nikolaus; Bachmann, Klaus

    2004-01-01

    In search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.

  4. Advanced Computational Modeling of Vapor Deposition in a High-Pressure Reactor

    NASA Technical Reports Server (NTRS)

    Cardelino, Beatriz H.; Moore, Craig E.; McCall, Sonya D.; Cardelino, Carlos A.; Dietz, Nikolaus; Bachmann, Klaus

    2004-01-01

    In search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.

  5. Advanced Computational Modeling of Vapor Deposition in a High-pressure Reactor

    NASA Technical Reports Server (NTRS)

    Cardelino, Beatriz H.; Moore, Craig E.; McCall, Sonya D.; Cardelino, Carlos A.; Dietz, Nikolaus; Bachmann, Klaus

    2004-01-01

    In search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.

  6. Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study

    SciTech Connect

    Lorenz, K.; Barradas, N. P.; Alves, E.; Miranda, S. M. C.; Nanishi, Y.; Schaff, W. J.; Tu, L. W.; Darakchieva, V.

    2011-06-01

    The doping mechanisms of InN, a promising material for novel optoelectronic and electronic devices, are still not well understood. Unintentional hydrogen doping is one possibility that could explain the unintentional n-type conductivity in high-quality nominally undoped InN films. We measured a series of state-of-the-art InN samples grown by molecular beam epitaxy with 2 MeV 4He-ERDA and RBS, showing the presence of relatively high amounts of hydrogen not only at the surface, but also in a deeper layer. Strong depletion of hydrogen due to the analysing beam was observed and taken into account in the analysis. Here, we report on the details of the analysis and show how the results correlate with the free-electron concentrations of the samples.

  7. Self-annihilation of inversion domains by high energy defects in III-Nitrides

    SciTech Connect

    Koukoula, T.; Kioseoglou, J. Kehagias, Th.; Komninou, Ph.; Ajagunna, A. O.; Georgakilas, A.

    2014-04-07

    Low-defect density InN films were grown on Si(111) by molecular beam epitaxy over an ∼1 μm thick GaN/AlN buffer/nucleation layer. Electron microscopy observations revealed the presence of inverse polarity domains propagating across the GaN layer and terminating at the sharp GaN/InN (0001{sup ¯}) interface, whereas no inversion domains were detected in InN. The systematic annihilation of GaN inversion domains at the GaN/InN interface is explained in terms of indium incorporation on the Ga-terminated inversion domains forming a metal bonded In-Ga bilayer, a structural instability known as the basal inversion domain boundary, during the initial stages of InN growth on GaN.

  8. Conditional Budding Yeast Mutants with Temperature-Sensitive and Auxin-Inducible Degrons for Screening of Suppressor Genes.

    PubMed

    Devrekanli, Asli; Kanemaki, Masato T

    2016-01-01

    The conditional control of protein expression is useful to characterize the function of proteins, especially of those that are essential for cell viability. Two degron-based systems, temperature-sensitive and auxin-inducible degrons, can be used to generate conditional mutants of budding yeast, simply by transforming appropriate cells with PCR-amplified DNA. We describe a protocol for the generation of temperature-sensitive and auxin-inducible degron mutants. We also show that a conditional mutant with few spontaneous revertants was generated by combining two degron systems for the Inn1 protein. Finally, we describe a suppressor screening method that uses the dual degron-Inn1 mutant to identify mutant proteins that suppress Inn1-K31A, which has a defect in cytokinesis.

  9. The Discovery of the Nearest Star

    NASA Astrophysics Data System (ADS)

    Glass, I. S.

    2007-07-01

    Proxima Centauri, the closest star to us after the Sun, is part of a triple system whose other two members constitute the double ? Centauri. In the 1830s, the latter was the subject of the first successful stellar parallax measure ments made in Cape Town by Thomas Henderson. Proxima was found in 1915, at the Union Observatory in Johannesburg by R T A Innes, as a faint star with a high proper motion similar to that of ? Cen. Its parallax was measured independently over the following two years by J G E G Vote at the Cape and by Innes himself, unknown to each other. Innes, on the basis of his rather rough result, declared it to be closer than ? and named it 'Proxima Centauri', but the truth of its proximity was only established rigorously in 1928 by H A Alden, based on observations at the Yale Southern Station in Johannesburg.

  10. Effect of polarity on Ni/InN interfacial reactions

    SciTech Connect

    Kragh-Buetow, K. C.; Weng, X.; Readinger, E. D.; Wraback, M.; Mohney, S. E.

    2013-01-14

    Ni films on (0001) and (0001) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni{sub 3}InN{sub x} ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.

  11. Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPA-MOCVD

    NASA Astrophysics Data System (ADS)

    Indika, S. M. K.; Seidlitz, Daniel; Fali, Alireza; Cross, Brendan; Abate, Yohannes; Dietz, Nikolaus

    2016-09-01

    This contribution presents results on the structural and optoelectronic properties of InN layers grown on AlN/sapphire (0001) templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical Vapor Deposition (MEPAMOCVD). The AlN nucleation layer (NL) was varied to assess the physical properties of the InN layers. For ex-situ analysis of the deposited structures, Raman spectroscopy, Atomic Force Microscopy (AFM), and Fourier Transform Infrared (FTIR) reflectance spectroscopy have been utilized. The structural and optoelectronic properties are assessed by Raman-E2 high FWHM values, surface roughness, free carrier concentrations, mobility of the free carriers, and high frequency dielectric function. This study focus on optimizing the AlN nucleation layer (e.g. temporal precursor exposure, nitrogen plasma exposure, plasma power and AlN buffer growth temperature) and its effect on the InN layer properties.

  12. Patient Safety in Medication Nomenclature: Orthographic and Semantic Properties of International Nonproprietary Names

    PubMed Central

    Bryan, Rachel; Aronson, Jeffrey K.; ten Hacken, Pius; Williams, Alison; Jordan, Sue

    2015-01-01

    Background Confusion between look-alike and sound-alike (LASA) medication names (such as mercaptamine and mercaptopurine) accounts for up to one in four medication errors, threatening patient safety. Error reduction strategies include computerized physician order entry interventions, and ‘Tall Man’ lettering. The purpose of this study is to explore the medication name designation process, to elucidate properties that may prime the risk of confusion. Methods and Findings We analysed the formal and semantic properties of 7,987 International Non-proprietary Names (INNs), in relation to naming guidelines of the World Health Organization (WHO) INN programme, and have identified potential for errors. We explored: their linguistic properties, the underlying taxonomy of stems to indicate pharmacological interrelationships, and similarities between INNs. We used Microsoft Excel for analysis, including calculation of Levenshtein edit distance (LED). Compliance with WHO naming guidelines was inconsistent. Since the 1970s there has been a trend towards compliance in formal properties, such as word length, but longer names published in the 1950s and 1960s are still in use. The stems used to show pharmacological interrelationships are not spelled consistently and the guidelines do not impose an unequivocal order on them, making the meanings of INNs difficult to understand. Pairs of INNs sharing a stem (appropriately or not) often have high levels of similarity (<5 LED), and thus have greater potential for confusion. Conclusions We have revealed a tension between WHO guidelines stipulating use of stems to denote meaning, and the aim of reducing similarities in nomenclature. To mitigate this tension and reduce the risk of confusion, the stem system should be made clear and well ordered, so as to avoid compounding the risk of confusion at the clinical level. The interplay between the different WHO INN naming principles should be further examined, to better understand their

  13. Solar domestic hot water system installed at Texas City, Texas

    NASA Technical Reports Server (NTRS)

    1980-01-01

    This is the final technical report of the solar energy system located at LaQuinta Motor Inn, Texas City, Texas. The system was designed to supply 63 percent of the total hot water load for a new 98 unit motor inn. The solar energy system consists of a 2100 square feet Raypack liquid flat plate collector subsystem and a 2500 gallon storage subsystem circulating hot water producing 3.67 x 10 to the 8th power Btu/year. Abstracts from the site files, specification references, drawings, installation, operation, and maintenance instructions are included.

  14. Growth and characterization of indium nitride layers grown by high-pressure chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Alevli, Mustafa

    In this research the growth of InN epilayers by high-pressure chemical vapor deposition (HPCVD) and structural, optical properties of HPCVD grown InN layers has been studied. We demonstrated that the HPCVD approach suppresses the thermal decomposition of InN, and therefore extends the processing parameters towards the higher growth temperatures (up to 1100K for reactor pressures of 15 bar, molar ammonia and TMI ratios around 800, and a carrier gas flow of 12 slm). Structural and surface morphology studies of InN thin layers have been performed by X-ray diffraction, low energy electron diffraction (LEED), auger electron spectroscopy (AES), high-resolution electron energy loss spectroscopy (HREELS) and atomic force microscopy (AFM). Raman spectroscopy, infrared reflection, transmission, photoluminescence spectroscopy studies have been carried out to investigate the structural and optical properties of InN films grown on sapphire and GaN/sapphire templates. InN layers grown on a GaN (0002) epilayer exhibit single-phase InN (0002) X-ray diffraction peaks with a full width at half maximum (FWHM) around 200 arcsec. Auger electron spectroscopy confirmed the cleanliness of the surface, and low energy electron diffraction yielded a 1x1 hexagonal pattern indicating a well-ordered surface. The plasmon excitations are shifted to lower energies in HREEL spectra due to the higher carrier concentration at the surface than in the bulk, suggesting a surface electron accumulation. The surface roughness of samples grown on GaN templates is found to be smoother (roughness of 9 nm) compared to the samples grown on sapphire. We found that the deposition sometimes led to the growth of 3 dimensional hexagonal InN pyramids. Results obtained from Raman and IR reflectance measurements are used to estimate the free carrier concentrations, which were found in the range from mid 1018 cm-3 to low 10 20 cm-3. The optical absorption edge energy calculated from the transmission spectra is 1.2 e

  15. Parks and recreation: Concerns raised about National Park Service actions at Delaware Water Gap

    SciTech Connect

    Not Available

    1987-01-01

    The National Park Service followed Department of the Interior regulations, policies, and guidelines in soliciting and reviewing proposals and determining that Shawnee Inn was the successful bidder in the lease of the Copper Mine Inn at the Delaware Water Gap National Recreation Area located in Pennsylvania and New Jersey. The National Park Service's decision to close the commercial campground operated by Mr. Donald Von Hagan is consistent with the general management planning process. Mr. Von Hagan's rent represents the fair market rental rate established by an independent appraiser.

  16. A Workshop on High-Level Connectionist Models

    DTIC Science & Technology

    1988-04-11

    departments of Computer Science, Electrical Engineering, Mathematics and Psychology , eight full-time researchers and over thirty research assis- tants. -4- 2...and the problems for each. Using psychological evidence, he argued for a form of inhibition (Renshaw) over the usual winner-take-all lateral inhibition...00 LUNCH Barnden LUNCli 12:00-1:00 Holiday Inn Iolidav Inn 1:00-2:00 Schvaneveldt BRUNCH 2:00-3:00 Dyer Double 3:00-3:30 BREAK Eale 3:30-4:30 Birnbaum

  17. Proceedings of the TRADOC/Training Developments Institute Chiefs of Anlaysis Seminar (4th) Held in Hampton, Virginia, 16-18 July 1980.

    DTIC Science & Technology

    1980-09-30

    NOTES .1 ’ ; R CT A!tI AA IGIUFI 2" T 19. KEY WORDS (Cowntinuw on revereo side. it nriwa!*1W. I ,.&nab~ Basic Skills Education Program Critical Task...Analysis Seminar held at the Hampton Holiday Inn, VA; 16-18 July 1980. The major ,i themes of this seminar were the TRAnOC Basic Skills Education Program...VA was held at the HIpton Holiday Inn, Hampton, Virginia, 16 thru 18 July 1980. The major thes of this seminar was the TRADxC Basic Skills Education

  18. Recent progress in metal-organic chemical vapor deposition of \\left( 000\\bar{1} \\right) N-polar group-III nitrides

    NASA Astrophysics Data System (ADS)

    Keller, Stacia; Li, Haoran; Laurent, Matthew; Hu, Yanling; Pfaff, Nathan; Lu, Jing; Brown, David F.; Fichtenbaum, Nicholas A.; Speck, James S.; DenBaars, Steven P.; Mishra, Umesh K.

    2014-11-01

    Progress in metal-organic chemical vapor deposition of high quality \\left( 000\\bar{1} \\right) N-polar (Al, Ga, In)N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key process components such as utilization of vicinal substrates, conditions ensuring a high surface mobility of species participating in the growth process, and low impurity incorporation. The high quality of the fabricated films enabled the demonstration of N-polar (Al, Ga, In)N based devices with excellent performance for transistor applications. Challenges related to the growth of high quality N-polar InGaN films are also presented.

  19. Fabrication and structural studies of opal-III nitride nanocomposites

    NASA Astrophysics Data System (ADS)

    Davydov, V. Yu; Golubev, V. G.; Kartenko, N. F.; Kurdyukov, D. A.; Pevtsov, A. B.; Sharenkova, N. V.; Brogueira, P.; Schwarz, R.

    2000-12-01

    In this paper, regular three-dimensional systems of GaN, InN and InGaN nanoclusters have been fabricated for the first time in a void sublattice of artificial opal. The opal consisted of 220 nm diameter close packed amorphous silica spheres and had a regular sublattice of voids accessible to filling by other substances. GaN, InN and InGaN were synthesized directly in the opal voids from precursors such as metal salts and nitrogen hydrides. The composites' structures have been characterized using x-ray diffraction, Raman spectroscopy, atomic force microscopy and optical measurements.

  20. US EPA, Pesticide Product Label, OMEGA 320, 08/07/1984

    EPA Pesticide Factsheets

    2011-04-21

    ... I r.-:-:t';~d nll":1i ',1] Manufrilulld by: ,Uhl Apr It·JS,' 1..'11, t· .... C\\.Irp"r.·lt inn 11 • .~r!r., "If n".I::! :: J ~" . rt II r, 111',.1-; ('l tv. ~'f I",s"tlr I f).'. 1 1 " EPA REG. ...

  1. Calling All Golfers | Poster

    Cancer.gov

    Teams are forming for the third annual R&W Club Frederick Golf Tournament on Sept. 14. Last year’s tournament hosted more than 40 players and raised nearly $1,000 for the NIH Children’s Inn, Bethesda, Md.  The tournament will be held at Maryland National Golf Club in Middletown, Md. 

  2. The Fashion Police: Never out of Fashion

    ERIC Educational Resources Information Center

    Barlow, Dudley

    2004-01-01

    Some readers will recall Newhart, Bob Newhart's television series from 1982 to 1990. In it, he played Dick Ludon, a New Yorker who moved to Vermont with his wife to run an inn. Stephanie Vanderkellen, a snotty, rich, young woman, worked there as a maid to appease her parents. Her boyfriend, Michael, was not rich but was as snobbish as she was.…

  3. US EPA, Pesticide Product Label, BERMACIDE 72, 09/07 ...

    EPA Pesticide Factsheets

    2011-04-21

    ... ['rioted lanel i09. your r"l"I,~t' (or ~.tdp;n"lj't of th.· (i',)(luct h.·qjrl!ly the am"nnud, I df.r"lin\\.l cenR!: i tilt.·" ·IllT .... tnnc.-· ()j th.'!'! c~~n.1I t inns. , , , . ...

  4. 12. Oblique view northeast of south elevation at southwest corner ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    12. Oblique view northeast of south elevation at southwest corner of building. Door at center accesses storage area. Pedimented 'niche' at left center holds mosaic shown in HABS-CA-2611-B-14. Scale visible at left edge of open door. - Deetjen's Big Sur Inn, Hayloft Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  5. Interpreting Letters and Reading Script: Evidence for Female Education and Literacy in Tudor England

    ERIC Educational Resources Information Center

    Daybell, James

    2005-01-01

    Attempts to write the history of female education are hampered by the relative informality of teaching provision for women in early modern England. Since most women were excluded from male centres of learning--the grammar schools, universities and Inns of Court--historians are deprived of institutional records, which so well elucidate the…

  6. High Power Efficiency Blue-to-Green Organic Light-Emitting Diodes Using Isonicotinonitrile-Based Fluorescent Emitters.

    PubMed

    Sasabe, Hisahiro; Onuma, Natsuki; Nagai, Yuji; Ito, Takashi; Kido, Junji

    2017-03-16

    Herein, 9,10-dihydro-9,9-dimethylacridine (Ac) or phenoxazine (PXZ)-substituted isonicotinonitrile (INN) derivatives, denoted as 2AcINN, 26AcINN, and 26PXZINN, were developed as a series of thermally activated delayed fluorescence (TADF) emitters. These emitters showed reasonably high photoluminescence quantum yields of 71-79 % in the host films and high power efficiency organic light-emitting diodes (OLEDs). Sky-blue emitter 26AcINN exhibited a low turn-on voltage of 2.9 V, a high external quantum efficiency (ηext ) of 22 %, and a high power efficiency (ηp ) of 66 lm W(-1) with Commission Internationale de l'Eclairage (CIE) chromaticity coordinates of (0.22, 0.45), whereas green emitter 26PXZINN exhibited a low turn-on voltage of 2.2 V, a high ηext of 22 %, and a high ηp of 99 lm W(-1) with CIE chromaticity coordinates of (0.37, 0.58). These performances are among the best for TADF OLEDs to date.

  7. 25. LOBBY FIREPLACE. NOTE THE GEYSER DECORATING THE FIREPLACE SCREEN ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    25. LOBBY FIREPLACE. NOTE THE GEYSER DECORATING THE FIREPLACE SCREEN AND THE WEIGHTS AND PENDULUM HANGING FROM THE CLOCK DESIGNED BY ARCHITECT ROBERT C. REAMER. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  8. 37. DINING ROOM FROM BALCONY. THE DINING ROOM ROOF IS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    37. DINING ROOM FROM BALCONY. THE DINING ROOM ROOF IS SUPPORTED BY A SCISSOR TRUSS SYSTEM REINFORCED WITH TURNBUCKLE IRON RODS AND GUSSET PLATES (NOTE: THIS SYSTEM DIFFERS FROM THE LOBBY). - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  9. Proceedings of the Atmospheric Neutral Density Specialist Conference, Held in Colorado Springs, Colorado on March 22-23, 1988

    DTIC Science & Technology

    1988-03-23

    PROCEEDINGS OF THE ATMOSPHERIC NEUTRAL DENSITY SPECIALIST CONFERENCE Lf) cN HELD AT THE RAINTREE INN, AIRPORT COLORADO SPRINGS, COLORADO 22 - 23...Lt Col George R. Davenport Headquarters Fourth Weather Wing Air Weather Service Neutral Atmospheric Modeling Requirements...5 Captain Chris R. Tschan HO AWS/DNXP Air Force Space Command Requiremnents for Neutral Atmospheric Density Specification and

  10. Gay Aging

    ERIC Educational Resources Information Center

    Haber, David

    2009-01-01

    The oldest of the baby boomers (boomers) were age 63 in 2009 and on the verge of retirement. This cohort has had a history of making societal changes throughout its life cycle, and it is unlikely that retirement, as we know it, will remain unscathed. This article highlights two events--the Stonewall Inn riots and two prominent professional…

  11. US EPA, Pesticide Product Label, , 03/13/1990

    EPA Pesticide Factsheets

    2011-04-13

    ... Rf"ff'r!'. 10 a('t ual f j,htlf'r.,lIw :kllt St·,· ('f 'l1\\·fr!'.IOJl Tahlp I,) f'lInn'rl '" an" JUlI' fr r, .rmu'al I,d l"rt I Gihb nf'f'd"d ,'" " ... Guide: Apply a single spray '0 moth .. ...

  12. Getting Down to Business: Innkeeping, Module 13. [Student Guide]. Entrepreneurship Training Components.

    ERIC Educational Resources Information Center

    Rassen, Rachel L.

    This module on owning and operating an inn is one of 36 in a series on entrepreneurship. The introduction tells the student what topics will be covered and suggests other modules to read in related occupations. Each unit includes student goals, a case study, and a discussion of the unit subject matter. Learning activities are divided into…

  13. 76 FR 55415 - Notice of Application for Withdrawal and Public Meeting; Oregon; Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-07

    ... Bureau of Land Management Notice of Application for Withdrawal and Public Meeting; Oregon; Correction....m. at the Best Western Beachfront Inn, 16008 Boat Basin Road, Brookings, Oregon 97415.'' FOR FURTHER INFORMATION CONTACT: Michael L. Barnes, BLM Oregon/ Washington State Office, 503-808-6155, or Kevin Johnson,...

  14. 76 FR 30965 - Notice of Public Meeting, Southeast Oregon Resource Advisory Council

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-27

    ... Bureau of Land Management Notice of Public Meeting, Southeast Oregon Resource Advisory Council AGENCY... Interior, Bureau of Land Management (BLM) Southeast Oregon Resource Advisory Council (SEORAC) will meet as... will take place at the Holiday Inn Express, 212 SE. 10th Street, Ontario, Oregon 97914. FOR...

  15. 76 FR 46320 - Notice of Public Meeting, Southeast Oregon Resource Advisory Council

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-02

    ... Bureau of Land Management Notice of Public Meeting, Southeast Oregon Resource Advisory Council AGENCY... Interior, Bureau of Land Management (BLM) Southeast Oregon Resource Advisory Council (RAC) will meet as... meetings will take place at the Sunridge Inn, 1 Sunridge Lane, Baker City, Oregon 97814. FOR...

  16. 28 CFR 36.104 - Definitions.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... cabooses, commuter or intercity passenger rail cars (including coaches, dining cars, sleeping cars, lounge...” if it is— (i) An inn, hotel, or motel; or (ii) A facility that— (A) Provides guest rooms for sleeping... service that uses video conference technology over dedicated lines or wireless technology offering...

  17. 28 CFR 36.104 - Definitions.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... cabooses, commuter or intercity passenger rail cars (including coaches, dining cars, sleeping cars, lounge...” if it is— (i) An inn, hotel, or motel; or (ii) A facility that— (A) Provides guest rooms for sleeping... service that uses video conference technology over dedicated lines or wireless technology offering...

  18. 28 CFR 36.104 - Definitions.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... cabooses, commuter or intercity passenger rail cars (including coaches, dining cars, sleeping cars, lounge...” if it is— (i) An inn, hotel, or motel; or (ii) A facility that— (A) Provides guest rooms for sleeping... service that uses video conference technology over dedicated lines or wireless technology offering...

  19. 28 CFR 36.104 - Definitions.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... cabooses, commuter or intercity passenger rail cars (including coaches, dining cars, sleeping cars, lounge...” if it is— (i) An inn, hotel, or motel; or (ii) A facility that— (A) Provides guest rooms for sleeping... service that uses video conference technology over dedicated lines or wireless technology offering...

  20. National Proceedings: Forest and Conservation Nursery Associations - 2013

    Treesearch

    K. M. Wilkinson; D. L. Haase; J. R. Pinto

    2014-01-01

    These proceedings are a compilation of 14 papers that were presented at the regional meetings of the forest and conservation nursery associations in the United States in 2013. The Joint Northeast and Southern Forest Nursery Conference was held at the Holiday Inn City Centre, Lafayette, Indiana, July 22 to 25, 2013. Subject matter for the technical sections included...

  1. 75 FR 61860 - Advisory Committee on Women Veterans; Notice of Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-06

    ... AFFAIRS Advisory Committee on Women Veterans; Notice of Meeting The Department of Veterans Affairs (VA... Women Veterans will meet October 26-28, 2010, at the Hilton Garden Inn, in the Georgetown Ballroom, 815... of women Veterans with respect to health care, rehabilitation, compensation, outreach, and...

  2. War Surgery: Working With Limited Resources in Armed Conflict and Other Situations of Violence (Volume 2)

    PubMed Central

    Lambert, Anthony

    2014-01-01

    If you would like to submit a book to the Annals for review, please send two copies to: Publications Department, The Royal College of Surgeons of England, 35–43 Lincoln’s Inn Fields, London WC2A 3PE. Book reviews are published at the discretion of the editor.

  3. 76 FR 79707 - Notice of Public Meetings, Twin Falls District Resource Advisory Council, Idaho

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-22

    ... Bureau of Land Management Notice of Public Meetings, Twin Falls District Resource Advisory Council, Idaho... Interior, Bureau of Land Management (BLM) Twin Falls District Resource Advisory Council (RAC) and..., 2012, the Twin Falls District RAC members will meet at the Best Western Sawtooth Inn at 2653 S....

  4. 76 FR 46217 - Implementation of the Amendments to the International Convention on Standards of Training...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-02

    .... Friday, August 26, 2011, The Edgewater Hotel Noble House Hotels & Resorts, 2411 Alaskan Way, Pier 67... or before September 30, 2011 or reach the Docket Management Facility by that date. ADDRESSES: The..., 1201 NW Le Jeune Road, Building A, Miami, FL 33126. Wednesday, August 24, 2011, Hilton Garden Inn...

  5. Effects of Low-Level Exposure to Sarin and Cyclosarin During the 1991 Gulf War on Brain Function and Brain Structure in US Veterans

    DTIC Science & Technology

    2006-01-01

    2010), which are considered the best non- primate model of organophosphorous intoxication (Inns and Leadbeater 1983). Alternatively, it could be that...nerve agents at Khamisiyah: postwar hospitalization data revisited. Am J Epidemiol 2003; 158: 457–467. Spitzer R, Williams J, Gibbon M, First M. The

  6. The Role of elF4E Activity in Breast Cancer

    DTIC Science & Technology

    2011-08-01

    update. Nucl. Recept . Signaling 6, e003 27 Xue, Q., Lin, Z., Cheng, Y. H., Huang, C. C., Marsh, E., Yin, P., Milad, M. P., Confino, E., Reierstad, S...Innes, J. and Bulun, S. E. (2007) Promoter methylation regulates estrogen receptor 2 in human endometrium and endometriosis. Biol. Reprod. 77, 681–687 28

  7. The Role of eIF4E Activity in Breast Cancer

    DTIC Science & Technology

    2010-08-01

    Nucl. Recept . Signaling 6, e003 27 Xue, Q., Lin, Z., Cheng, Y. H., Huang, C. C., Marsh, E., Yin, P., Milad, M. P., Confino, E., Reierstad, S., Innes, J...and Bulun, S. E. (2007) Promoter methylation regulates estrogen receptor 2 in human endometrium and endometriosis. Biol. Reprod. 77, 681–687 28 Zhang

  8. 1. Historic American Buildings Survey, August, 1971 SOUTH (FRONT) ELEVATIONS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. Historic American Buildings Survey, August, 1971 SOUTH (FRONT) ELEVATIONS OF CORNER OF UNITED STATES HOTEL (FAR LEFT), JUDGE AND NUNAN'S SADDLERY, P.J. RYAN'S FIRST BRICK STORE BUILDING (JACKSONVILLE INN). - P. J. Ryan's First Brick Store Building, 175 East California Street, Jacksonville, Jackson County, OR

  9. Guiding Users to Unmediated Interlibrary Loan

    ERIC Educational Resources Information Center

    Adams, Carolyn; Ressel, Margret J.; Silva, Erin S.

    2009-01-01

    This article provides a practitioner's guide to marketing user-initiated borrowing at the point of need. By reviewing interlibrary loan book requests and manually transferring them to an INN-Reach consortial system, Link+, the University of Nevada, Reno Libraries were able to successfully market the service, deliver materials faster, and save…

  10. The River Talks: An Ecocritical "Korero" about Ecological Performance, Community Activism and "Slow Violence"

    ERIC Educational Resources Information Center

    Matthewman, Sasha; Mullen, Molly; Patuwai, Tamati

    2015-01-01

    On 27 February 2013, Mad Ave staged "The River Talks," a collation of linked performances in and on the banks of the Omaru River in Glen Innes, Auckland, New Zealand. The event brought together artistic and discursive works that challenged a view of this local river as always and forever degraded. An example of committed ecological…

  11. 5. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 INTERIOR DETAIL, NORTHEAST AND SOUTHEAST PARLORS, ORIGINAL MANTEL (LEFT - RADIATOR COVERED). - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  12. 76 FR 18540 - Environmental Management Site-Specific Advisory Board, Northern New Mexico

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-04

    ... Environmental Management Site-Specific Advisory Board, Northern New Mexico AGENCY: Department of Energy. ACTION...-Specific Advisory Board (EM SSAB), Northern New Mexico (known locally as the Northern New Mexico Citizens....m.-4 p.m. ADDRESSES: Holiday Inn Express and Suites, 60 Entrada Drive, Los Alamos, New Mexico 87544...

  13. 75 FR 29725 - Mid-Atlantic Fishery Management Council; Public Hearings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-27

    ..., 2010, 7 p.m. - 9 p.m.: Hilton Garden Inn, Providence Airport/Warwick, One Thuber Street, Warwick, RI... management process; the biological and socio-economic outcomes of a catch share system and how such outcomes depend on specific program design features; the possible need for changes to existing information...

  14. Calling All Golfers | Poster

    Cancer.gov

    Teams are forming for the third annual R&W Club Frederick Golf Tournament on Sept. 14. Last year’s tournament hosted more than 40 players and raised nearly $1,000 for the NIH Children’s Inn, Bethesda, Md.  The tournament will be held at Maryland National Golf Club in Middletown, Md. 

  15. 77 FR 4501 - Special Local Regulation and Safety Zone; America's Cup Sailing Events, San Francisco, CA

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-30

    ...: Inn Marin, 250 Entrada Dr., Novato, CA 94949; March 8, 2012: Waterfront Hotel, 10 Washington St... Coast Guard's ability and capacity to enforce event regulations over the time period proposed; (3..., local, or tribal government, in the aggregate, or by the private sector of $100,000,000 (adjusted...

  16. Technology in the Classroom.

    ERIC Educational Resources Information Center

    Speidel, Gisela E., Ed.

    1995-01-01

    This theme issue contains 20 articles dealing with technology in the classroom. The articles are: (1) "Distance Learning and the Future of Kamehameha Schools Bishop Estate" (Henry E. Meyer); (2) "Technology and Multiple Intelligences" (Bette Savini); (3) "Technology Brings Voyagers into Classrooms" (Kristina Inn and…

  17. Novel compound semiconductor devices based on III-V nitrides

    SciTech Connect

    Pearton, S.J.; Abernathy, C.R.; Ren, F.

    1995-10-01

    New developments in dry and wet etching, ohmic contacts and epitaxial growth of Ill-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts.

  18. Design and Construction of an Intestinal Noises Acquisition System

    DTIC Science & Technology

    2001-10-25

    which allows a depurated registration and a more efficient storing of INN was designed and developed. II. METHODOLOGY The system developed...coupled by air . The coupler (C) was made of extra soft silicon of low viscosity, with the form shown in fig. 1. Fig. 1. Dimensions of

  19. 76 FR 52596 - Proposed Establishment of Class C Airspace for Long Beach, CA; Public Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-23

    ... Federal Aviation Administration 14 CFR Part 71 Proposed Establishment of Class C Airspace for Long Beach... airspace users and others, concerning a proposal to establish Class C airspace at Long Beach, CA. The... on or before December 12, 2011. ADDRESSES: The meetings will be held at the Holiday Inn Long Beach...

  20. 76 FR 21387 - National Institute of Environmental Health Sciences; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-15

    ... public in accordance with the provisions set forth in sections 552b(c)(4) and 552b(c)(6), Title 5 U.S.C... Inn Durham Southpoint, 7007 Fayetteville Road, Durham, NC 27713. Contact Person: Sally Eckert-Tilotta...

  1. 78 FR 43860 - Caribbean Fishery Management Council; Scoping Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-22

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF COMMERCE... locations: In Puerto Rico: August 5, 2013--7 p.m.-10 p.m.--Mayaguez Resort & Casino, Route 104, Km 0.3, Mayag ez 00680, Puerto Rico. August 6, 2013--7 p.m.-10 p.m.--at the Holiday Inn Ponce & Tropical Casino...

  2. Schein’s Common Sense: Prevention and Management of Surgical Complications

    PubMed Central

    Britton, David

    2014-01-01

    If you would like to submit a book to the Annals for review, please send two copies to: Publications Department, The Royal College of Surgeons of England, 35–43 Lincoln’s Inn Fields, London WC2A 3PE. Book reviews are published at the discretion of the editor.

  3. National Proceedings: Forest and Conservation Nursery Associations-2009

    Treesearch

    L. E. Riley; J. R. Pinto; R. K. Dumroese

    2010-01-01

    These proceedings are a compilation of 20 papers that were presented at the regional meetings of the Intertribal Nursery Council and the forest and conservation nursery associations in the United States in 2009. The Intertribal Nursery Council Meeting was held at the Best Western University Inn in Moscow, Idaho, on July 14, 2009. Subject matter for the technical...

  4. The Role and Values of Combat Leadership in Modern Warfare: Can Combat Leadership and Personal Leadership Skills be Replaced by Modern Technology?

    DTIC Science & Technology

    2011-04-29

    level, where actions and counteractions are following each other.6 Command and control should give flexibility and energy in such an environment...enkjenning slar inn. Men, det koker ofte ned til; hva skal du oppmi? Hva er dine prim<Ere m~l, og hva er eventuelt dine sekund<Ere mill. I dagens

  5. 78 FR 64510 - Center for Scientific Review; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-29

    ... review and evaluate grant applications. Place: Doubletree Hotel Bethesda, (Formerly Holiday Inn Select), 8120 Wisconsin Avenue, Bethesda, MD 20814. Contact Person: Kenneth Ryan, PhD., Scientific Review... 7717, Bethesda, MD 20892, 301-435- 1789, kenneth.ryan@nih.hhs.gov . Name of Committee: Center...

  6. 2009 Analysis Platform Review Report

    SciTech Connect

    Ferrell, John

    2009-12-01

    This document summarizes the recommendations and evaluations provided by an independent external panel of experts at the U.S. Department of Energy Biomass Program’s Analysis platform review meeting, held on February 18, 2009, at the Marriott Residence Inn, National Harbor, Maryland.

  7. Seminars in Liver Disease

    PubMed Central

    2014-01-01

    If you would like to submit a book to the Annals for review, please send two copies to: Publications Department, The Royal College of Surgeons of England, 35–43 Lincoln’s Inn Fields, London WC2A 3PE. Book reviews are published at the discretion of the editor.

  8. The River Talks: An Ecocritical "Korero" about Ecological Performance, Community Activism and "Slow Violence"

    ERIC Educational Resources Information Center

    Matthewman, Sasha; Mullen, Molly; Patuwai, Tamati

    2015-01-01

    On 27 February 2013, Mad Ave staged "The River Talks," a collation of linked performances in and on the banks of the Omaru River in Glen Innes, Auckland, New Zealand. The event brought together artistic and discursive works that challenged a view of this local river as always and forever degraded. An example of committed ecological…

  9. Environmental epigenomics and disease susceptibility.

    PubMed

    Skinner, Michael K

    2011-07-01

    The Keystone symposium on 'Environmental Epigenomics and Disease Susceptibility' was held in late March 2011 at the Grove Park Inn Resort in Asheville, North Carolina, USA. The meeting helped to define the developing field of 'environmental epigenetics' and the research presented established its role in disease aetiology and susceptibility.

  10. Simulating the Law: Experiential "Teachniques" in the Modern Law Curricula

    ERIC Educational Resources Information Center

    Daly, Yvonne; Higgins, Noelle

    2010-01-01

    The concept of arguing aspects of legal scenarios in order to facilitate student learning within the law curriculum originated in the vocational Inns of Court in fourteenth-century England. Nowadays, simulations of court proceedings, such as moot courts and mock trials, are widely employed as educational tools in law modules in third-level…

  11. Cokie Roberts Cares about Kids! | NIH MedlinePlus the Magazine

    MedlinePlus

    ... on the lighted Sports Court or enjoy a family dinner. Familiar to millions as a senior news analyst for National Public Radio and commentator for ABC News, Roberts also is a best-selling author. But families at The Inn know her simply as a ...

  12. Fulfilling Dreams: Transitions into an ECE Online Preservice Teacher Education Degree

    ERIC Educational Resources Information Center

    Taylor, Pauline

    2009-01-01

    There is increased attention on the first year experience at universities generally as a result of the Australian federal government's focus on increased accountability for universities and widening participation in further education (DEST, 2003; Jardine & Krause, 2005; Kift, 2005; Krause, Hartley, James & McInnes, 2005). However, these…

  13. Innovative Concepts Program

    SciTech Connect

    1996-06-01

    Moving an idea from a concept to the marketplace is difficult. Innovators can overcome the obstacles with the help of US DOE`s Inventions and innovation program (IIP). IIP is one of several programs supported by DOE`s Office of Energy Efficiency and Renewable Energy, which has the goal of developing cost-effective renewable energy and energy-efficiency technologies. The Innovative Concepts Program (InnCon) provides valuable assistance at the beginning when innovators are just starting to explore their concepts. It provides seed money to allow innovators to determine if their ideas are technically and economically feasible. InnCon operates in cycles of roughly 1-2 years; for each cycle it chooses an energy-related topic and invites innovators to submit proposals for funding, and up to 15 innovators per cycle are awarded seed money. InnCon is intended to fund novel ideas that are significant departures from existing technologies. Well-developed inventions past the conceptual stage can apply to Energy-Related Inventions Program (ERIP), which is also part of IIP. This brochure describes the InnCon program and how it is advertised and administered, and gives a contact name and address.

  14. [Generic drugs at hospital discharge: assessment in geriatrics].

    PubMed

    Michelon, Hugues; Marcel, Julie; Coudert, Mathieu; Juillard, Kim; Pochat, Laurence; Fernandez, Christine; Verny, Marc; Antignac, Marie

    2014-03-01

    To assess the impact of physician awareness to promote the prescription and the dispensing of generic drugs at hospital discharge. The study consisted in a Before/After Study design including the analysis of medical prescriptions at hospital discharge, after a pharmaceutical intervention to physicians in a geriatric ward. Each drug was classified according to its terms of prescribing (International Nonproprietary Name (INN), Generic or Trade Name). The primary endpoint defined is the rate of medication prescribed by INN or generic. Statistical analysis was performed on all medicines and according to the prescribers' status (junior/senior). Three hundred and fifty one drugs were prescribed in the group "before intervention" versus 301 in the group "after". The average number of drugs prescribed per patient was similar between the two groups (9.5 drugs/patient). A generic prescription has been improved by 5% between the two periods (19.7% "before" vs 24.3% "after", p=0.27). Analysis on prescriber status indicates that the pharmaceutical intervention had a significant impact on junior physicians, which resulted in improved prescribing of drug (INN or generic) from 17.6% to 31.4% between the two periods (p=0.006). The pharmaceutical intervention to physicians has led to an improvement of drug prescription (INN or generic) at hospital discharge. This awareness has affected mainly junior prescribers hence the need to extend this type of intervention to all prescribers of our establishment.

  15. Manual of Endoscopic Sinus and Skull Base Surgery

    PubMed Central

    Hawthorne, Maurice

    2014-01-01

    If you would like to submit a book to the Annals for review, please send two copies to: Publications Department, The Royal College of Surgeons of England, 35–43 Lincoln’s Inn Fields, London WC2A 3PE. Book reviews are published at the discretion of the editor.

  16. Interpreting Letters and Reading Script: Evidence for Female Education and Literacy in Tudor England

    ERIC Educational Resources Information Center

    Daybell, James

    2005-01-01

    Attempts to write the history of female education are hampered by the relative informality of teaching provision for women in early modern England. Since most women were excluded from male centres of learning--the grammar schools, universities and Inns of Court--historians are deprived of institutional records, which so well elucidate the…

  17. Simulating the Law: Experiential "Teachniques" in the Modern Law Curricula

    ERIC Educational Resources Information Center

    Daly, Yvonne; Higgins, Noelle

    2010-01-01

    The concept of arguing aspects of legal scenarios in order to facilitate student learning within the law curriculum originated in the vocational Inns of Court in fourteenth-century England. Nowadays, simulations of court proceedings, such as moot courts and mock trials, are widely employed as educational tools in law modules in third-level…

  18. 27. LOBBY, LOOKING NORTHEAST FROM SECOND FLOOR. THE STRUCTURE IN ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    27. LOBBY, LOOKING NORTHEAST FROM SECOND FLOOR. THE STRUCTURE IN UPPER LEFT HAND SIDE OF PHOTOGRAPH, A MUSICIANS' PLATFORM CALLED 'THE CROW'S NEST' WAS BUILT IN THE GABLE. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  19. 5. View to east of west elevation. Second story deck ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. View to east of west elevation. Second story deck at right opens off 'Fireside' guest room; Helmuth Deetjen hand-carved the balusters. Scale just visible against first story wall at lower right. - Deetjen's Big Sur Inn, Hayloft Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  20. The New Poverty: Homeless Families in America.

    ERIC Educational Resources Information Center

    Nunez, Ralph da Costa

    This book discusses homeless families in the United States and advocates the efforts of residential educational and employment training centers--American Family Inns--which provide comprehensive services education, job training, and parenting and life skills to address the poverty-related conditions that contribute to homelessness. Chapters of the…

  1. Polymyalgia rheumatica

    MedlinePlus

    ... is unknown. PMR may occur before or with giant cell arteritis (GCA; also called temporal arteritis ). This ... Hellmann DB. Giant cell arteritis, polymyalgia rheumatica, and Takayasu's arteritis. In: Firestein GS, Budd RC, Gabriel SE, McInnes IB, O'Dell ...

  2. 77 FR 24555 - Sunshine Act Meeting Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-24

    ... From the Federal Register Online via the Government Publishing Office TENNESSEE VALLEY AUTHORITY Sunshine Act Meeting Notice Meeting No. 12-02 April 26, 2012 The TVA Board of Directors will hold a public meeting on April 26, 2012, in the Grand Ballroom at the General Morgan Inn, 111 North Main...

  3. Drug packaging. A key factor to be taken into account when choosing a treatment.

    PubMed

    2011-10-01

    A drug's packaging contributes to its harm-benefit balance. Highlighting the key practical information and identifying potential sources of error or mix-ups is part and parcel of the correct use of medicines. Select labelling that clearly and prominently displays the important information, including the international nonproprietary name (INN).

  4. 13. Oblique view northeast of west elevation, again showing deck ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    13. Oblique view northeast of west elevation, again showing deck opening off 'Fireplace' room. Shed-roofed 'Van Gogh' room at left, second story. Scale placed at center, below balustrade. - Deetjen's Big Sur Inn, Hayloft Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  5. Control of Fuel Microorganisms with Magnetic Devices: Laboratory Investigation with Hormoconis Resinae

    DTIC Science & Technology

    1991-11-01

    Aircraft Materials Technical Memorandum 408 CONTROL OF FUEL MICROORGANISMS WITH MAGNETIC DEVICES: LABORATORY INN, ESTIGATION WITH HORMOCONIS RESINAE...LABORATORY Aircraft Materials Technical Memorandum 408 CONTROL OF FUEL MICROORGANISMS WITH MAGNETIC DEVICES: LABORATORY INVESTIGATION WITH HORMOCONIS...presence of a grey black material , which probably arose from the magneticmaterial in the device. This material was most likely responsible for the

  6. Getting Down to Business: Innkeeping, Module 13. Teacher Guide. Entrepreneurship Training Components.

    ERIC Educational Resources Information Center

    Rassen, Rachel L.

    This is the thirteenth in a set of 36 teacher guides to the Entrepreneurial Training Modules and accompanies CE 031 054. Its purpose is to give students some idea of what it is like to own and operate an inn. Following an overview are general notes on use of the module. Suggested steps for module use contain suggestions on introducing the module,…

  7. Another Look at the Wine Butler

    ERIC Educational Resources Information Center

    DeWeerd, Alan J.

    2007-01-01

    In a recent article, Iain MacInnes analyzed the static equilibrium of a system consisting of a wine bottle and a wine butler. After discussing that composite system, students can be asked to consider only the bottle (and its contents) as the system. An interesting challenge for them is to describe the forces on the bottle in static equilibrium.

  8. A sense of place: Ecoregional design at Mesa Verde National Park

    Treesearch

    Robert G. Bailey

    2012-01-01

    When the National Park Service was established in 1916, the new agency inherited an architectural legacy developed by private interests, particularly the railroads. This legacy included Northern Pacific's Old Faithful Inn in Yellowstone and Santa Fe's El Tovar at the south rim of the Grand Canyon, both built in the Swiss Chalet­Norway Villa tradition. This...

  9. 7. View southwest of 'Chalet' room from doorway. Windows beyond ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. View southwest of 'Chalet' room from doorway. Windows beyond bed are in southwest end of building, while those at left overlook Castro Creek Canyon. Scale visible against door frame near head of bed. - Deetjen's Big Sur Inn, Champagne Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  10. View northeast of southwest end at south corner of building. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    View northeast of southwest end at south corner of building. Castro Creek Canyon drops off sharply at right of picture, precluding photography of southeast side of building (see HABS-CA-2611-4 for reference.) - Deetjen's Big Sur Inn, Antique Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  11. Mahlzeit! (Enjoy Your Meal!) German Table Manners, Menus, and Eating Establishments.

    ERIC Educational Resources Information Center

    Singer, Debbie

    A series of short texts focus on German eating habits and types of eating establishments. Vocabulary is glossed in the margin and each text is followed by comprehension questions. Menus from a restaurant, an inn, and a fast-food restaurant; vocabulary exercises; a word search puzzle and its solution; and directions in English for conversational…

  12. Connect the Book. The Midnight Ride of Paul Revere

    ERIC Educational Resources Information Center

    Brodie, Carolyn S.

    2005-01-01

    The famous poem "The Midnight Ride of Paul Revere" by Henry Wadsworth Longfellow (originally included in "Tales of a Wayside Inn" as "The Landlord's Tale") has been illustrated by a number of children's book artists over the years. One particular version of note was graved and painted by Christopher Bing and published by Handprint Books in 2001.…

  13. Growing media alternatives for forest and native plant nurseries

    Treesearch

    Thomas D. Landis; Nancy Morgan

    2009-01-01

    The choice of growing medium, along with container type, is one of the critical decisions that must be made when starting a nursery. The first growing medium was called "compost" and was developed in the 1930s at the John Innes Horticultural Institute in Great Britain. It consisted of a loam soil that was amended with peat moss, sand, and fertilizers (Bunt...

  14. High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Ibáñez, J.; Oliva, R.; Manjón, F. J.; Segura, A.; Yamaguchi, T.; Nanishi, Y.; Cuscó, R.; Artús, L.

    2013-09-01

    We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanism responsible for the selective excitation of LO phonons with large wave vectors in w-InN. The pressure behavior of the L- coupled mode observed in a heavily doped n-type sample allows us to estimate the pressure dependence of the electron effective mass in w-InN. The results thus obtained are in good agreement with k·p theory. The wurtzite-to-rocksalt phase transition on the upstroke cycle and the rocksalt-to-wurtzite backtransition on the downstroke cycle are investigated, and the Raman spectra of both phases are interpreted in terms of DFT lattice-dynamical calculations.

  15. 36 CFR 1005.8 - Discrimination in employment practices.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 36 Parks, Forests, and Public Property 3 2010-07-01 2010-07-01 false Discrimination in employment practices. 1005.8 Section 1005.8 Parks, Forests, and Public Property PRESIDIO TRUST COMMERCIAL AND PRIVATE OPERATIONS § 1005.8 Discrimination in employment practices. (a) The proprietor, owner, or operator of any hotel, inn, lodge or other facility...

  16. 36 CFR 5.8 - Discrimination in employment practices.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 36 Parks, Forests, and Public Property 1 2010-07-01 2010-07-01 false Discrimination in employment practices. 5.8 Section 5.8 Parks, Forests, and Public Property NATIONAL PARK SERVICE, DEPARTMENT OF THE INTERIOR COMMERCIAL AND PRIVATE OPERATIONS § 5.8 Discrimination in employment practices. (a) The proprietor, owner, or operator of any hotel, inn...

  17. 78 FR 63243 - Notice of Public Meeting; Wyoming Resource Advisory Council

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-23

    ... Reclamation Center, participation in the University of Wyoming's ``A Landscape Discussion on Energy Law in.... at the Holiday Inn Laramie. On Wednesday, November 13, ``A Landscape Discussion on Energy Law in... Wyoming Energy Innovation Center, 1020 East Lewis Street, Laramie, Wyoming. The public may attend the...

  18. QTL mapping of domestication and diversifying selection related traits in round-fruited semi-wild Xishuangbanna cucumber (Cucumis sativus L. var. xishuangbannanesis)

    USDA-ARS?s Scientific Manuscript database

    Flowering time and fruit size are two important traits in domestication and crop evolution in cucumber, but little is known about their genetic basis. In this paper, we reported QTL mapping on flowering time and fruit size inn populations derived from the cross between a small fruited, early floweri...

  19. 9. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    9. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 CLOSE-UP OF SMALL FRONT FIREPLACE, SOUTHWEST ROOM. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  20. 11. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    11. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 SOUTHWEST ROOM SHOWING ORIGINAL CORNER FIREPLACE, OPENING BEHIND BAR. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  1. 8. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    8. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 REEDING DETAIL OF MANTEL IN NORTHEAST PARLOR. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  2. 13. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    13. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 STAIR DETAIL, SECOND FLOOR LEVEL (INSPECTION OF STAIR REVEALS PRESENCE OF A STRING OPPOSITE BANNISTER ORIGINALLY). - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  3. 6. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 NORTHWEST ROOM SHOWING COOK FIREPLACE, ORIGINAL MANTEL, CRANE AND OPENING FOR BAKE OVEN. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  4. 12. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    12. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 CLOSE-UP DETAIL OF CORNER FIREPLACE. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  5. Proceedings of the 2015 Sorghum Improvement Conference of North America (SICNA)

    USDA-ARS?s Scientific Manuscript database

    The 2015 Sorghum Improvement Conference of North America (SICNA) meeting was held at the Hilton Garden Inn, Manhattan, KS from September 1-3, 2015. The meeting was attended by nearly 200 participants representing a diverse cross section of the sorghum industry including sorghum research community fr...

  6. Highly Accurate Antibody Assays for Early and Rapid Detection of Tuberculosis in African and Asian Elephants

    USDA-ARS?s Scientific Manuscript database

    Tuberculosis (TB) in elephants is a re-emerging zoonotic disease caused primarily by Mycobacterium tuberculosis. Current methods for screening and diagnosis rely on trunk wash culture, which has serious limitations due to low test sensitivity, slow turn-around time, and variable sample quality. Inn...

  7. 7. Oblique view southeast of north end of building. Scale ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. Oblique view southeast of north end of building. Scale visible adjacent to door at lower right. Compare to HABS-CA-2611-B-4. - Deetjen's Big Sur Inn, Hayloft Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  8. USACE Extreme Sea levels

    DTIC Science & Technology

    2014-03-14

    will discuss with Jason Engle and determine the best way to proceed. • Kate will provide a copy of the storm climate analysis report that Andy Garcia ...Kossin J, Luo Y, Marengo J, McInnes K, Rahimi M, Reichstein M, Sorteberg A, Vera C, Zhang X (2012) Changes in climate extremes and their impacts on the

  9. CMC Behavior and Life Modeling Workshop Summary Report (Preprint)

    DTIC Science & Technology

    2011-11-01

    Park Blvd, Dayton, Ohio, USA 45431 ) on August 3-4th, 2011. Leaders from the major aero jet engine manufacturers, airframe structure manufactures...Life Modeling Workshop was held in Dayton, Ohio at the Hilton Garden Inn (3520 Pentagon Park Blvd, Dayton, Ohio, USA 45431 ) on August 3-4th, 2011

  10. Columbine Author Speaks at Conference

    ERIC Educational Resources Information Center

    Cook, Andrea J.

    2004-01-01

    Brooks Brown, the author of No Easy Answers: The Truth Behind Death at Columbine High School, spoke at the 11th annual Reclaiming Youth International No Disposable Kids conference at Rushmore Plaza Holiday Inn. Brown, who worked with Michael Moore on his Academy Award winning documentary, "Bowling for Columbine," said the letters he…

  11. 2012 BATTERIES GORDON RESEARCH CONFERENCE, MARCH 4-9, 2012

    SciTech Connect

    Stephen Harris

    2012-03-09

    The Gordon Research Conference on BATTERIES was held at Four Points Sheraton / Holiday Inn Express, Ventura, California, March 4-9, 2012. The Conference was well-attended with 176 participants. Gordon Research Conferences does not permit publication of meeting proceedings.

  12. Proceedings of the 23rd Southern Forest Tree Improvement Conference

    Treesearch

    Robert J. Weir; Alice V. Hatcher; [Compilers

    1995-01-01

    The 23rd Southern Forest Tree Improvement Conference was held at the Holiday Inn SunSpree Resort in Asheville, North Carolina. The Conference was sponsored by the Southern Forest Tree Improvement Committee and hosted by the N. C. State University-Industry Cooperative Tree Improvement Program. A total of 37 presentations, three invited and 34 voluntary, were given....

  13. Proceedings of the ninety-first stated meeting of the American Ornithologists' Union

    USGS Publications Warehouse

    Banks, R.C.

    1974-01-01

    The Ninety-first Stated Meeting of the American Ornithologists' Union was held 8-12 October 1973 at Provincetown, on Cape Cod, Massachusetts, under the sponsorship of the Nuttall Ornithological Club, which was celebrating its centennial year. Business, technical, and social sessions were held in the Provincetown Inn. Field trips were taken to various localities on Cape Cod.

  14. National Proceedings: Forest and Conservation Nursery Associations-2003

    Treesearch

    Lee E. Riley; Kas Dumroese; Thomas D. Landis

    2004-01-01

    This proceedings is a compilation of 30 papers that were presented at the regional meetings of the Forest and Conservation Nursery Associations in the United States in 2003. The Western Forest and Conservation Nursery Association meeting was held at the Coeur d'Alene Inn in Coeur d'Alene, Idaho, June 9 to 12. The meeting was hosted by the USDA Forest Service...

  15. Proceedings of the 2001 Southern Mensurationists' Conference

    Treesearch

    Paul F. Doruska; Don C. Bragg

    2000-01-01

    The 2001 Southern Mensurationists' Conference was held in scenic Chattanooga, Tennessee at the historical Chattanooga Choo Choo Holiday Inn. This conference was the latest in the series of annual gatherings of southern biometricians, and attracted speakers and participants from Texas to Virginia. A variety of papers were presented and the quaint atmosphere, as...

  16. Project ES '70 Training for Local Coordinators. Final Report.

    ERIC Educational Resources Information Center

    Jacobson, Majory E.

    The "organic curriculum" of the Educational System of the Seventies Project (ES '70) is one which integrates academic training, occupational training, and personal development in grades nine through 12 and which draws heavily on research dealing with individualized instruction. The program held at Kingsley Inn, Bloomfield Hills,…

  17. 76 FR 29770 - National Cancer Institute; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-23

    ..., 2011, Time: 8 a.m. to 5 p.m. Agenda: To review and evaluate grant applications. Place: Hilton..., Scientific Review Officer, Program Coordination and Referral Branch, Division of Extramural Activities... review and evaluate grant applications. Place: Doubletree Hotel Bethesda, (Formerly Holiday Inn...

  18. Another Look at the Wine Butler

    ERIC Educational Resources Information Center

    DeWeerd, Alan J.

    2007-01-01

    In a recent article, Iain MacInnes analyzed the static equilibrium of a system consisting of a wine bottle and a wine butler. After discussing that composite system, students can be asked to consider only the bottle (and its contents) as the system. An interesting challenge for them is to describe the forces on the bottle in static equilibrium.

  19. Final Report

    SciTech Connect

    Ananda M. Chakrabarty

    2009-06-18

    This is the front matter for the 7th Biennial Symposium, International Society for Environmental Biotechnology, held at the Holiday Inn Chicago Mart Plaza, Chicago, Illinois on the dates of June 18-21, 2004. It contains a list of the symposium organizers, acknowledgements and the symposium overview.

  20. 76 FR 64954 - National Institute of General Medical Sciences Notice of Closed Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-19

    ... of Committee: National Institute of General Medical Sciences Initial Review Group Biomedical Research and Research Training Review Subcommittee B Date: November 16-17, 2011. Time: 8 a.m. to 5 p.m. Agenda: To review and evaluate grant applications, Doubletree Hotel Bethesda (Formerly Holiday Inn...

  1. "Building the Natural Society of the Future": The Peckham Experiment (1943) as an Anarchist Account of Childhood and Education

    ERIC Educational Resources Information Center

    Charkin, Emily

    2014-01-01

    "The Peckham Experiment" (Innes H. Pearse and Lucy H. Crocker, Edinburgh: Scottish Academic Press, 1985) is a book about the Peckham Health Centre (1935-1950), which was a scientific experiment and community centre set up to identify and foster conditions of good health for local working-class families in South London. The book was…

  2. 2009 Infrastructure Platform Review Report

    SciTech Connect

    Ferrell, John

    2009-12-01

    This document summarizes the recommendations and evaluations provided by an independent external panel of experts at the U.S. Department of Energy Biomass program‘s Infrastructure platform review meeting, held on February 19, 2009, at the Marriott Residence Inn, National Harbor, Maryland.

  3. Annotated Bibliography and State-of-the-Art Review of the Field of Team Training as it Relates to Military Teams

    DTIC Science & Technology

    1986-02-01

    rroups were composed ofthr-e tidividuals oa’ the sine sex . orrrn re~~~S wpre roundi for tho tisk typp and cvooprntlva Mi-ionsicns. 713sk type necounte’l...rrews that are assigned hilh porn eflt ng,* of untrained Indivilunts. nnd maonitoring~ performance. lluensn r7Ators. 1079, 17, :?96-Inn. Four i~onltcrinp

  4. "Building the Natural Society of the Future": The Peckham Experiment (1943) as an Anarchist Account of Childhood and Education

    ERIC Educational Resources Information Center

    Charkin, Emily

    2014-01-01

    "The Peckham Experiment" (Innes H. Pearse and Lucy H. Crocker, Edinburgh: Scottish Academic Press, 1985) is a book about the Peckham Health Centre (1935-1950), which was a scientific experiment and community centre set up to identify and foster conditions of good health for local working-class families in South London. The book was…

  5. Guiding Users to Unmediated Interlibrary Loan

    ERIC Educational Resources Information Center

    Adams, Carolyn; Ressel, Margret J.; Silva, Erin S.

    2009-01-01

    This article provides a practitioner's guide to marketing user-initiated borrowing at the point of need. By reviewing interlibrary loan book requests and manually transferring them to an INN-Reach consortial system, Link+, the University of Nevada, Reno Libraries were able to successfully market the service, deliver materials faster, and save…

  6. 36 CFR 5.9 - Discrimination in furnishing public accommodations and transportation services.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... This is a facility operated in an area under the jurisdiction of the U.S. Department of the Interior... furnishing public accommodations and transportation services. (a) The proprietor, owner or operator and the employees of any hotel, inn, lodge, or other facility or accommodation offered to or enjoyed by the general...

  7. Optical, structural, and transport properties of indium nitride, indium gallium nitride alloys grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Khan, Neelam

    InGaN based, blue and green light emitting diodes (LEDs) have been successfully produced over the past decade. But the progress of these LEDs is often limited by the fundamental problems of InGaN such as differences in lattice constants, thermal expansion coefficients and physical properties between InN and GaN. This difficulty could be addressed by studying pure InN and InxGa 1-xN alloys. In this context Ga-rich InxGa1-xN (x ≤ 0.4) epilayers were grown by metal organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) measurements showed InxGa1-xN films with x= 0.37 had single phase. Phase separation occurred for x ˜ 0.4. To understand the issue of phase separation in Ga-rich InxGa 1-xN, studies on growth of pure InN and In-rich InxGa 1-xN alloys were carried out. InN and In-rich InxGa1-xN (x ˜ 0.97-0.40) epilayers were grown on AlN/Al2O3 templates. A Hall mobility of 1400 cm2/Vs with a carrier concentration of 7x1018cm -3 was observed for InN epilayers grown on AlN templates. Photoluminescence (PL) emission spectra revealed a band to band emission peak at ˜0.75 eV for InN. This peak shifted to 1.15 eV when In content was varied from 1.0 to 0.63 in In-rich InxGa1-xN epilayers. After growth parameter optimization of In-rich InxGa1-xN alloys with (x = 0.97-0.40) were successfully grown without phase separation. Effects of Mg doping on the PL properties of InN epilayers grown on GaN/Al 2O3 templates were investigated. An emission line at ˜ 0.76 eV, which was absent in undoped InN epilayers and was about 60 meV below the band edge emission peak at ˜ 0.82 eV, was observed to be the dominant emission in Mg-doped InN epilayers. PL peak position and the temperature dependent emission intensity corroborated each other and suggested that Mg acceptor level in InN is about 60 meV above the valance band maximum. Strain effects on the emission properties of InGaN/GaN multiple quantum wells (MQWs) were studied using a single blue LED wafer possessing a continuous

  8. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    NASA Technical Reports Server (NTRS)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  9. Comparison of relative efficacy of two techniques of enamel stain removal on fluorosed teeth. An in vivo study.

    PubMed

    Bharath, K P; Subba Reddy, V V; Poornima, P; Revathy, V; Kambalimath, H V; Karthik, B

    2014-01-01

    The present study was conducted to compare and evaluate the relative efficacy of enamel microabrasion (using 18% HCl) and bleaching with McInnes solution in the esthetic improvement of fluorosed teeth and to check postoperative sensitivity. 30 children aged between 9-14yrs with a mild or moderate grade of fluorosis as classified according to Dean's fluorosis index and who complained of objectionable esthetics were selected. Split mouth study design was selected in our study. Each subject had one of their maxillary central incisor randomly selected for Enamel microabrasion and the contra lateral maxillary central incisor for McInnes bleaching. Esthetic improvement was assessed by comparing the pre and postoperative digital photographs. During the evaluation session, the pre and postoperative photographs of 30 subjects were incorporated into a power point presentation and were projected side by side in a darkened room. Four calibrated and blinded examiners, including a layman rated the photographs under standardized viewing conditions. Esthetic improvement was assessed for both short and long term improvement. The postoperative sensitivity was recorded for both the procedures immediately after treatment and at one, three and six months interval. The results proved that both immediate and long term (6 month) esthetic improvement achieved by McInnes bleaching were superior to enamel microabrasion. There is a reduction in aesthetics of teeth in both the procedures after six months, which was very minimal in McInnes procedure and significant in enamel micro abrasion. Postoperative sensitivity in both techniques were negligible. The sensitivity observed were transient and subsided within an one-month post operatively. None of the subjects reported sensitivity at one, three and six months intervals. McInnes bleaching is a better procedure compared to enamel microabrasion in improving the appearance of fluorosed teeth. Both techniques are conservative and safe.

  10. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    NASA Technical Reports Server (NTRS)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  11. Biosecurity and Vector Behaviour: Evaluating the Potential Threat Posed by Anglers and Canoeists as Pathways for the Spread of Invasive Non-Native Species and Pathogens

    PubMed Central

    Anderson, Lucy G.; White, Piran C. L.; Stebbing, Paul D.; Stentiford, Grant D.; Dunn, Alison M.

    2014-01-01

    Invasive non-native species (INNS) endanger native biodiversity and are a major economic problem. The management of pathways to prevent their introduction and establishment is a key target in the Convention on Biological Diversity's Aichi biodiversity targets for 2020. Freshwater environments are particularly susceptible to invasions as they are exposed to multiple introduction pathways, including non-native fish stocking and the release of boat ballast water. Since many freshwater INNS and aquatic pathogens can survive for several days in damp environments, there is potential for transport between water catchments on the equipment used by recreational anglers and canoeists. To quantify this biosecurity risk, we conducted an online questionnaire with 960 anglers and 599 canoeists to investigate their locations of activity, equipment used, and how frequently equipment was cleaned and/or dried after use. Anglers were also asked about their use and disposal of live bait. Our results indicate that 64% of anglers and 78.5% of canoeists use their equipment/boat in more than one catchment within a fortnight, the survival time of many of the INNS and pathogens considered in this study and that 12% of anglers and 50% of canoeists do so without either cleaning or drying their kit between uses. Furthermore, 8% of anglers and 28% of canoeists had used their equipment overseas without cleaning or drying it after each use which could facilitate both the introduction and secondary spread of INNS in the UK. Our results provide a baseline against which to evaluate the effectiveness of future biosecurity awareness campaigns, and identify groups to target with biosecurity awareness information. Our results also indicate that the biosecurity practices of these groups must improve to reduce the likelihood of inadvertently spreading INNS and pathogens through these activities. PMID:24717714

  12. Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

    SciTech Connect

    Soto Rodriguez, Paul E. D. Aseev, Pavel; Gómez, Victor J.; Kumar, Praveen; Ul Hassan Alvi, Naveed; Calleja, Enrique; Morales, Francisco M.; Senichev, Alexander; Lienau, Christoph; Nötzel, Richard

    2015-01-12

    The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In{sub 0.73}Ga{sub 0.27}N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 10{sup 9} cm{sup −2}. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

  13. Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence

    SciTech Connect

    Seetoh, I. P.; Soh, C. B.; Fitzgerald, E. A.; Chua, S. J.

    2013-03-11

    Auger recombination in InN films grown by metal-organic chemical vapor deposition was studied by steady-state photoluminescence at different laser excitation powers and sample temperatures. It was dominant over radiative recombination and Shockley-Read-Hall recombination at low temperatures, contributing to the sub-linear relationship between the integrated photoluminescence intensity and laser excitation power. Auger recombination rates increased gradually with temperature with an activation energy of 10-17 meV, in good agreement with values from transient photoluminescence reported in literature. As the Auger recombination rates were independent of material quality, they may form an upper limit to the luminous efficiency of InN.

  14. Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

    SciTech Connect

    Khanal, D. R.; Levander, A. X.; Wu, J.; Yu, K. M.; Liliental-Weber, Z.; Walukiewicz, W.; Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E.

    2011-08-01

    We demonstrate the isolation of two free carrier scattering mechanisms as a function of radial band bending in InN nanowires via universal mobility analysis, where effective carrier mobility is measured as a function of effective electric field in a nanowire field-effect transistor. Our results show that Coulomb scattering limits effective mobility at most effective fields, while surface roughness scattering only limits mobility under very high internal electric fields. High-energy {alpha} particle irradiation is used to vary the ionized donor concentration, and the observed decrease in mobility and increase in donor concentration are compared to Hall effect results of high-quality InN thin films. Our results show that for nanowires with relatively high doping and large diameters, controlling Coulomb scattering from ionized dopants should be given precedence over surface engineering when seeking to maximize nanowire mobility.

  15. The Vela Supernova Remnant

    NASA Astrophysics Data System (ADS)

    Raymond, John C.

    We wish to obtain both emission and absorption line observations of the Vela Supernova remnant. The filament we wish to study in emission is the brightest filament in the SNR, so it will provide a spectrum twice the quality of any in existence. It is also located at the edge of an unusual bulge in the SNR, and it can be used to test the level of departure from pressure equilibrium in the remnant, which is useful as a test of evaporative models of SNR evolution. The absorption line studies will look for evidence of the drastically unstable behavior of shocks above 150 km/s predicted by Innes and Giddings. Four of the stars studied by Jenkins, Silk and Wallerstein showed marginal evidence for two positive or two negative high velocity components. If these multiple velocity components are confirmed, they support the secondary shock predictions of Innes and Giddings.

  16. Effect of Power Bleaching on the Fluorosis Stained Anterior Teeth Case Series

    PubMed Central

    M, Annapoorna B; Tejaswi, Sunil; Shetty, Suneeth; K, Sowmya H

    2014-01-01

    Bleaching is a conservative method for restoring the colour of intrinsic discoloration of teeth. The combination of McInnes solution and power bleaching is effective procedure for bleaching of fluorosis stained teeth. Definitely bleaching with McInnes bleaching agent gives instant results, not dependent on patient’s compliance as other office based procedures, no dehydration of the tooth occurs with no damage to the pulp. Bleaching with this solution is esthetically pleasing and minimally invasive option for young patients rather than a complete coronal covering. The dentist is in complete control of the process throughout the treatment. It is a fast process the results are evident even after a single visit. PMID:25302292

  17. Effects of inelastic neutrino-nucleus scattering on supernova dynamics and radiated neutrino spectra.

    PubMed

    Langanke, K; Martínez-Pinedo, G; Müller, B; Janka, H-Th; Marek, A; Hix, W R; Juodagalvis, A; Sampaio, J M

    2008-01-11

    Based on the shell model for Gamow-Teller and the random phase approximation for forbidden transitions, we calculate cross sections for inelastic neutrino-nucleus scattering (INNS) under supernova (SN) conditions, assuming a matter composition given by nuclear statistical equilibrium. The cross sections are incorporated into state-of-the-art stellar core-collapse simulations with detailed energy-dependent neutrino transport. While no significant effect on the SN dynamics is observed, INNS increases the neutrino opacities noticeably and strongly reduces the high-energy tail of the neutrino spectrum emitted in the neutrino burst at shock breakout. Relatedly the expected event rates for the observation of such neutrinos by earthbound detectors are reduced by up to about 60%.

  18. Effects of Inelastic Neutrino-Nucleus Scattering on Supernova Dynamics and Radiated Neutrino Spectra

    SciTech Connect

    Langanke, K.; Martinez-Pinedo, G.; Mueller, B.; Janka, H.-Th.; Marek, A.; Hix, W. R.; Juodagalvis, A.; Sampaio, J. M.

    2008-01-11

    Based on the shell model for Gamow-Teller and the random phase approximation for forbidden transitions, we calculate cross sections for inelastic neutrino-nucleus scattering (INNS) under supernova (SN) conditions, assuming a matter composition given by nuclear statistical equilibrium. The cross sections are incorporated into state-of-the-art stellar core-collapse simulations with detailed energy-dependent neutrino transport. While no significant effect on the SN dynamics is observed, INNS increases the neutrino opacities noticeably and strongly reduces the high-energy tail of the neutrino spectrum emitted in the neutrino burst at shock breakout. Relatedly the expected event rates for the observation of such neutrinos by earthbound detectors are reduced by up to about 60%.

  19. Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

    NASA Astrophysics Data System (ADS)

    Guo, L.; Wang, X. Q.; Zheng, X. T.; Yang, X. L.; Xu, F. J.; Tang, N.; Lu, L. W.; Ge, W. K.; Shen, B.; Dmowski, L. H.; Suski, T.

    2014-03-01

    We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.

  20. Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement.

    PubMed

    Guo, L; Wang, X Q; Zheng, X T; Yang, X L; Xu, F J; Tang, N; Lu, L W; Ge, W K; Shen, B; Dmowski, L H; Suski, T

    2014-03-13

    We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.