Science.gov

Sample records for inns

  1. 15. LOOKING WEST TOWARD OLD FAITHFUL INN. THE INN'S NAMESAKE, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. LOOKING WEST TOWARD OLD FAITHFUL INN. THE INN'S NAMESAKE, OLD FAITHFUL GEYSER IS AT LEFT. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  2. Colloids in the River Inn

    NASA Astrophysics Data System (ADS)

    Ueckert, Martina; Niessner, Reinhard; Baumann, Thomas

    2015-04-01

    In the light of an increasing number of technical applications using nanoparticles and reports of adverse effects of engineered nanoparticles, research on the occurrence and stability of particles in all compartments has to be intensified. Colloids in river water represent the geologic setting, environmental conditions, and the anthropogenic use in its catchment. The river not only acts as a sink for nanoparticles but also as the source term due to exchange in the hyporheic zone and in bank filtration setups. The concentration, size distribution and elemental composition of particles in the River Inn were studied from the source in the Swiss Alps to the river mouth at Passau from 2008 to 2014. Samples were collected after each tributary from a sub-catchment and filtered on site using a new filtration device for gentle filtration. The elemental composition was determined after acid digestion with ICP/MS. SEM/EDX analysis provided morphological and elemental information for single particles. A complementary chemical analysis of the river water was performed to assess the geochemical stability of individual particles. As presented at EGU 2014, particles in the upper, rural parts mainly reveal changes in the geological setting of the tributary catchments. Not unexpectedly, particles originating from crystalline rocks, were more stable than particles originating from calcareous rocks. Anthropogenic and industrial influences increase in the lower parts. This went together with a change of the size distribution, an increase of the number of organic particles, and a decrease of the microfauna. Interestingly, specific leisure activities in a sub-catchment, like extensive downhill skiing, manifest itself in the particle composition. This general setting was validated in last year's sampling campaigns. An interesting change in on site parameters and hydrochemical composition was seen during all sampling campaigns at an inflow from the valley Kaunertal, Austria. Therefore

  3. Konocti Harbon Inn, Kelseyville, California

    SciTech Connect

    Not Available

    1982-04-01

    Konocti Harbor is a large resort complex, located on the shore of Clear Lake, in Kelseyville, California. A number of buildings on the property, including a 25,000 square foot lodge, 101 motel units and 48 apartment units are heated by the large water-to-water heat pumps, using water from the lake as a heat source. Due to low winter occupancy rates, these machines are run at very low capacity. In addition, a number of buildings are operated on electric resistance and propane backup boilers. This mode of operation results in a relatively high cost compared to the actual heating requirements. Since these systems were originally designed for low temperature water (125/sup 0/F supply 10/sup 0/..delta..t), a low temperature geothermal resource could potentially displace some of the conventional fuel currently used. The potential for geothermal use at the Konocti Harbor Inn is explored.

  4. Colloids in the River Inn

    NASA Astrophysics Data System (ADS)

    Ueckert, Martina; Baumann, Thomas

    2014-05-01

    In the light of an increasing number of technical applications using nanoparticles and reports of adverse effects of engineered nanoparticles, research on the occurrence and stability of particles in all compartments has to be intensified. Colloids in river water represent the geologic setting, environmental conditions, and the anthropogenic use in its catchment. The river not only acts as a sink for nanoparticles but also as the source term due to exchange in the hyporheic zone and in bank filtration setups. The concentration, size distribution and elemental composition of particles in the River Inn were studied from the source in the Swiss Alps to the river mouth at Passau. Samples were collected after each tributary from a sub-catchment and filtered on-site. The elemental composition was determined after acid digestion with ICP/MS. SEM/EDX analyses provided morphological and elemental information for single particles. A complementary chemical analysis of the river water was performed to assess the geochemical stability of indvidual particles. Particles in the upper, rural parts mainly reveal changes in the geological setting of the tributary catchments. Not unexpectedly, particles originating from crystalline rocks, were more stable than particles originating from calcareous rocks. Anthropogenic and industrial influences increase in the lower parts. This went together with a change of the size distribution, an increase of the number of organic particles, and a decrease of the microfauna. Interestingly, specific leisure activities in a sub-catchment, like extensive downhill skiing, manifest itself in the particle composition.

  5. 16. LOOKING WEST AT OLD FAITHFUL INN, MOST OF THE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    16. LOOKING WEST AT OLD FAITHFUL INN, MOST OF THE EAST WING IS VISIBLE TO THE LEFT. THE EAST WING ADDITION WAS BUILT BY THE INN'S ORIGINAL ARCHITECT, ROBERT C. REAMER IN 1913-14. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  6. 2. Contextual view southwest from hillside behind Inn, with corner ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    2. Contextual view southwest from hillside behind Inn, with corner of 'Big Sur Inn' Building (HABS-CA-2611-A) at extreme right, State Highway 1 curving through middle ground. - Deetjen's Big Sur Inn, Hayloft Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  7. 3. View to southeast from hillside behind Inn. Roof of ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    3. View to southeast from hillside behind Inn. Roof of 'Big Sur Inn' Building (HABS-CA-2611-A) at lower center, State Highway 1 bridge across Castro Creek Canyon at upper center. - Deetjen's Big Sur Inn, East Side of State Highway 1, Big Sur, Monterey County, CA

  8. Taming transport in InN

    SciTech Connect

    Ager III, Joel W.; Miller, Nate R.

    2011-05-29

    The large electron affinity of InN, close to 6 eV and the largest of any III-V semiconductor, creates a strong driving force for native donor formation, both in the bulk and at surfaces and interfaces. Moreover, all InN surfaces, regardless of crystal orientation or doping, have been observed to have a surface accumulation layer of electrons, which interferes with standard electrical measurements. For these reasons, until recently, it was uncertain whether or not compensation by donor defects would prevent “real” p-type activity (i.e. existence of sufficiently shallow acceptors and mobile holes). A coordinated experimental approach using a combination of electrical (Hall effect) and electrothermal (Seebeck coefficient) measurements will be described that allows definitive evaluation of carrier transport in InN. In Mg-doped InN films, the sensitivity of thermopower to bulk hole conduction, combined with modeling of the parallel conducting layers (surface/bulk/interface), enables quantitative measurement of the free hole concentration and mobility. In undoped (n-type) material, combined Hall and thermopower measurements, along with a considering of the scattering mechanisms, leads to a quantitative understanding of the crucial role of charged line defects in limiting electron transport.

  9. Rethinking the INN system for therapeutic antibodies

    PubMed Central

    Pottier, Jérémy; Chastang, Romane; Dumet, Christophe; Watier, Hervé

    2017-01-01

    ABSTRACT In the context of a possible revision of the International Nonproprietary Names (INN) system of recombinant monoclonal antibodies, which is saturated, we propose several avenues of reflection driven by the primary goal of the INN, information of health-care professionals. Clinical considerations argue for an abandon of the substems A (target category) and B (origin category), which lengthen the INN without real added-value. On the contrary, new substems or suffixes are required to alert on the absence/presence of an Fc portion and/or multispecificity, which are essential from a pharmacological point of view. Moreover, we think it necessary to explicitly mention Fc variations since they could influence the pharmacology of these biopharmaceuticals, and hence their efficacy and side-effects. Besides indicating the subclass/isotype in the documents easily accessible to health care professionals, we propose to systematically describe both the natural variations (allotypes) by using the Gm (G marker) system, and the artificial variations by using a Ge (G engineering) system that is discussed here and could apply to all IgG constant domains (tentatively called the Fy portion). PMID:27808597

  10. Mg doped InN and confirmation of free holes in InN

    SciTech Connect

    Wang, K.; Yamaguchi, T.; Miller, N.; Mayer, M. A.; Haller, E. E.; Iwamoto, R.; Araki, T.; Nanishi, Y.; Yu, K. M.; Walukiewicz, W.; Ager, J. W. III

    2011-01-24

    We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type 'window' the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted.

  11. Investigation of gas sensing properties of InN nanoparticles

    SciTech Connect

    Madapu, Kishore K. E-mail: dhara@igcar.gov.in; Prasad, A. K.; Tyagi, A. K.; Dhara, S. E-mail: dhara@igcar.gov.in

    2015-06-24

    InN nanoparticles were grown by chemical vapor deposition technique using In{sub 2}O{sub 3} as precursor material. Raman spectroscopic studies show the presence of the wurtzite phase of as-grown InN. Size of the nanoparticles were in range from quantum dot (<8 nm) to larger sized particles (100 nm). We studied the gas sensing properties of InN nanoparticles with CH{sub 4} gas. Sensors substrates were fabricated with interdigitated Au electrodes. InN nanoparticles show high response towards CH{sub 4} with minimum detectable concentration of 50 ppm at 200 °C.

  12. 21. REAR OF OLD FAITHFUL INN, LOOKING NORTH. SEMICIRCULAR SIDE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    21. REAR OF OLD FAITHFUL INN, LOOKING NORTH. SEMI-CIRCULAR SIDE DINING ROOM, NOW CALLED THE BEAR PIT WAS ADDED IN 1927. (TAKEN FROM CHERRY-PICKER) - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  13. Solar Hot Water for Motor Inn--Texas City, Texas

    NASA Technical Reports Server (NTRS)

    1982-01-01

    Final report describes solar domestic-hot-water heater installation at LaQuinta Motor Inn, Texas City, Texas which furnished 63% of total hot-water load of new 98-unit inn. Report presents a description of system, drawings and photographs of collectors, operations and maintenance instructions, manufacturers' specifications for pumps, and an engineer's report on performance.

  14. 17. HIGHWAY 190 ROAD VIEW AT FURNACE CREEK INN. NOTE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. HIGHWAY 190 ROAD VIEW AT FURNACE CREEK INN. NOTE ABANDONED GAS STATION ON LEFT AND ROAD TO BADWATER AT LEFT IN BACKGROUND. LOOKING WSW. - Death Valley National Park Roads, Death Valley Junction, Inyo County, CA

  15. Optical properties of InN studied by spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Chunya, Ye; Wei, Lin; Jin, Zhou; Shuping, Li; Li, Chen; Heng, Li; Xiaoxuan, Wu; Songqing, Liu; Junyong, Kang

    2016-10-01

    With recently developed InN epitaxy via a controlling In bilayer, spectroscopic ellipsometry (SE) measurements had been carried out on the grown InN and the measured ellipsometric spectra were fitted with the Delta Psi2 software by using a suitable model and the dispersion rule. The thickness was measured by a scanning electron microscope (SEM). Insight into the film quality of InN and the lattice constant were gained by X-ray diffraction (XRD). By fitting the SE, the thickness of the InN film is consistent with that obtained by SEM cross-sectional thickness measurement. The optical bandgap of InN was put forward to be 1.05 eV, which conforms to the experimental results measured by the absorption spectrum and cathodoluminescence (CL). The refractive index and the extinction coefficient of interest were represented for InN, which is useful to design optoelectronic devices. Project supported by the State Key Development Program for Basic Research of China (No. 2012CB619301), the National High Technology Research and Development Program of China (No. 2014AA032608), the National Natural Science Foundation of China (Nos. 11204254, 11404271), and the Fundamental Research Funds for the Central Universities (Nos. 2012121014, 20720150027).

  16. The INNs and outs of antibody nonproprietary names.

    PubMed

    Jones, Tim D; Carter, Paul J; Plückthun, Andreas; Vásquez, Max; Holgate, Robert G E; Hötzel, Isidro; Popplewell, Andrew G; Parren, Paul W H I; Enzelberger, Markus; Rademaker, Hendrik J; Clark, Michael R; Lowe, David C; Dahiyat, Bassil I; Smith, Victoria; Lambert, John M; Wu, Herren; Reilly, Mary; Haurum, John S; Dübel, Stefan; Huston, James S; Schirrmann, Thomas; Janssen, Richard A J; Steegmaier, Martin; Gross, Jane A; Bradbury, Andrew R M; Burton, Dennis R; Dimitrov, Dimiter S; Chester, Kerry A; Glennie, Martin J; Davies, Julian; Walker, Adam; Martin, Steve; McCafferty, John; Baker, Matthew P

    2016-01-01

    An important step in drug development is the assignment of an International Nonproprietary Name (INN) by the World Health Organization (WHO) that provides healthcare professionals with a unique and universally available designated name to identify each pharmaceutical substance. Monoclonal antibody INNs comprise a -mab suffix preceded by a substem indicating the antibody type, e.g., chimeric (-xi-), humanized (-zu-), or human (-u-). The WHO publishes INN definitions that specify how new monoclonal antibody therapeutics are categorized and adapts the definitions to new technologies. However, rapid progress in antibody technologies has blurred the boundaries between existing antibody categories and created a burgeoning array of new antibody formats. Thus, revising the INN system for antibodies is akin to aiming for a rapidly moving target. The WHO recently revised INN definitions for antibodies now to be based on amino acid sequence identity. These new definitions, however, are critically flawed as they are ambiguous and go against decades of scientific literature. A key concern is the imposition of an arbitrary threshold for identity against human germline antibody variable region sequences. This leads to inconsistent classification of somatically mutated human antibodies, humanized antibodies as well as antibodies derived from semi-synthetic/synthetic libraries and transgenic animals. Such sequence-based classification implies clear functional distinction between categories (e.g., immunogenicity). However, there is no scientific evidence to support this. Dialog between the WHO INN Expert Group and key stakeholders is needed to develop a new INN system for antibodies and to avoid confusion and miscommunication between researchers and clinicians prescribing antibodies.

  17. The INNs and outs of antibody nonproprietary names

    PubMed Central

    Jones, Tim D.; Carter, Paul J.; Plückthun, Andreas; Vásquez, Max; Holgate, Robert G.E.; Hötzel, Isidro; Popplewell, Andrew G.; Parren, Paul W.H.I.; Enzelberger, Markus; Rademaker, Hendrik J.; Clark, Michael R.; Lowe, David C.; Dahiyat, Bassil I.; Smith, Victoria; Lambert, John M.; Wu, Herren; Reilly, Mary; Haurum, John S.; Dübel, Stefan; Huston, James S.; Schirrmann, Thomas; Janssen, Richard A.J.; Steegmaier, Martin; Gross, Jane A.; Bradbury, Andrew R.M.; Burton, Dennis R.; Dimitrov, Dimiter S.; Chester, Kerry A.; Glennie, Martin J.; Davies, Julian; Walker, Adam; Martin, Steve; McCafferty, John; Baker, Matthew P.

    2016-01-01

    An important step in drug development is the assignment of an International Nonproprietary Name (INN) by the World Health Organization (WHO) that provides healthcare professionals with a unique and universally available designated name to identify each pharmaceutical substance. Monoclonal antibody INNs comprise a –mab suffix preceded by a substem indicating the antibody type, e.g., chimeric (-xi-), humanized (-zu-), or human (-u-). The WHO publishes INN definitions that specify how new monoclonal antibody therapeutics are categorized and adapts the definitions to new technologies. However, rapid progress in antibody technologies has blurred the boundaries between existing antibody categories and created a burgeoning array of new antibody formats. Thus, revising the INN system for antibodies is akin to aiming for a rapidly moving target. The WHO recently revised INN definitions for antibodies now to be based on amino acid sequence identity. These new definitions, however, are critically flawed as they are ambiguous and go against decades of scientific literature. A key concern is the imposition of an arbitrary threshold for identity against human germline antibody variable region sequences. This leads to inconsistent classification of somatically mutated human antibodies, humanized antibodies as well as antibodies derived from semi-synthetic/synthetic libraries and transgenic animals. Such sequence-based classification implies clear functional distinction between categories (e.g., immunogenicity). However, there is no scientific evidence to support this. Dialog between the WHO INN Expert Group and key stakeholders is needed to develop a new INN system for antibodies and to avoid confusion and miscommunication between researchers and clinicians prescribing antibodies. PMID:26716992

  18. The Children's Inn at NIH - Three Stories | NIH MedlinePlus the Magazine

    MedlinePlus

    ... of this page please turn JavaScript on. Feature: The Children's Inn The Children's Inn at NIH - Three Stories Past Issues / Summer 2014 Table of Contents Kristal Nemeroff—The Patient Kristal Nemeroff, age 2, at the Children's ...

  19. The Children's Inn at NIH Anniversary Key Messages | NIH MedlinePlus the Magazine

    MedlinePlus

    ... 37 sleeping rooms. The Inn opened a major expansion in May 2004, adding a new wing with ... Merck donated another $3.7 million for the expansion project. fast facts 1 The Children's Inn, located ...

  20. Solar Hot Water for a Motor Inn -- Las Vegas, Nevada

    NASA Technical Reports Server (NTRS)

    1982-01-01

    Solar hot-water installation at motor inn in Las Vegas, Nevada is described in report containing descriptions of design, philosophy, operation of system and problems and solutions. Provides drawings of solar roof plan, operator's instructions, manufacturers' brochures and copy of acceptance report.

  1. Temperature switching of cavity modes in InN microcrystals

    SciTech Connect

    Kazanov, D. R. Kaibyshev, V. H.; Davydov, V. Yu.; Smirnov, A. N.; Jmerik, V. N.; Kuznetsova, N. V.; Kopiev, P. S.; Ivanov, S. V.; Shubina, T. V.

    2015-11-15

    InN optical cavities supporting low-order whispering-gallery modes up to room temperature are formed by molecular-beam epitaxy on patterned substrates. The observed switching of the mode type with increasing temperature is explained in terms of changes in the optical parameters due to a shift of the absorption edge and modification of its shape. Modeling taking into account a variation in the refractive index reproduces the typical distributions of the electromagnetic-field intensity in the cavities.

  2. Lattice polarity detection of InN by circular photogalvanic effect

    SciTech Connect

    Zhang, Q.; Wang, X. Q.; He, X. W.; Yin, C. M.; Xu, F. J.; Shen, B.; Chen, Y. H.; Wang, Z. G.; Ishitani, Y.; Yoshikawa, A.

    2009-07-20

    We report an effective and nondestructive method based on circular photogalvanic effect (CPGE) to detect the lattice polarity of InN. Because of the lattice inversion between In- and N-polar InN, the energy band spin splitting is opposite for InN films with different polarities. Consequently under light irradiation with the same helicity, CPGE photocurrents in In- and N-polar layers will have opposite directions, thus the polarity can be detected. This method is demonstrated by our CPGE measurements in both n- and p-type InN films.

  3. Lattice polarity detection of InN by circular photogalvanic effect

    NASA Astrophysics Data System (ADS)

    Zhang, Q.; Wang, X. Q.; He, X. W.; Yin, C. M.; Xu, F. J.; Shen, B.; Chen, Y. H.; Wang, Z. G.; Ishitani, Y.; Yoshikawa, A.

    2009-07-01

    We report an effective and nondestructive method based on circular photogalvanic effect (CPGE) to detect the lattice polarity of InN. Because of the lattice inversion between In- and N-polar InN, the energy band spin splitting is opposite for InN films with different polarities. Consequently under light irradiation with the same helicity, CPGE photocurrents in In- and N-polar layers will have opposite directions, thus the polarity can be detected. This method is demonstrated by our CPGE measurements in both n- and p-type InN films.

  4. Applying the INN model to the MaxClique problem

    SciTech Connect

    Grossman, T.

    1993-09-01

    Max-Clique is the problem of finding the largest clique in a given graph. It is not only NP-hard, but, as recent results suggest, even hard to approximate. Nevertheless it is still very important to develop and test practical algorithms that will find approximate solutions for the maximum clique problem on various graphs stemming from numerous applications. Indeed, many different types of algorithmic approaches are applied to that problem. Several neural networks and related algorithms were applied recently to combinatorial optimization problems in general and to the Max-Clique problem in particular. These neural nets are dynamical system which minimize a cost (or computational ``energy``) function that represents the optimization problem, the Max-Clique in our case. Therefore they all belong to the class of integer programming algorithms surveyed in the Pardalos and Xue review. The work presented here is a development and improvement of a neural network algorithm that was introduced recently. In the previous work, we have considered two Hopfield type neural networks, the INN and the HcN, and their application to the max-clique problem. In this paper, I concentrate on the INN network and present an improved version of the t-A algorithm that was introduced in. The rest of this paper is organized as follows: in section 2, I describe the INN model and how it implements a given graph. In section 3, it is characterized in terms of graph theory. In particular, the stable states of the network are mapped to the maximal cliques of its underling graph. In section 4, I present the t-Annealing algorithm and an improved version of it, the Adaptive t-Annealing. Several experiments done with these algorithms on benchmark graphs are reported in section 5, and the efficiency of the new algorithm is demonstrated. I conclude with a short discussion.

  5. Temperature sensitive photoconductivity observed in InN layers

    NASA Astrophysics Data System (ADS)

    Guo, Lei; Wang, Xinqiang; Feng, Li; Zheng, Xiantong; Chen, Guang; Yang, Xuelin; Xu, Fujun; Tang, Ning; Lu, Liwu; Ge, Weikun; Shen, Bo

    2013-02-01

    Photoconductivity has been systematically studied in unintentionally doped n-type InN film with super-bandgap excitation (1.53 eV) at temperatures varying in the range of 100-300 K. A negative photoconductivity is observed at room temperature, whereas it gradually changes to be positive with decreasing temperature. Transition temperature from negative to positive photoconductivity is found to be greatly related to the residual electron concentration as the higher the electron concentration, the lower the transition temperature. An energy band model including a donor state with large lattice relaxation as well as a recombination center is proposed, which explains the experimental observation well.

  6. Transmission Electron Microscopy Study of InN Nanorods

    SciTech Connect

    Liliental-Weber, Z.; Li, X.; Kryliouk, Olga; Park, H.J.; Mangum,J.; Anderson, T.

    2006-07-13

    InN nanorods were grown on a, c-, and r-plane of sapphire and also on Si (111) and GaN (0001) by non-catalytic, template-free hydride metal-organic vapor phase epitaxy and studied by transmission electron microscopy, electron energy loss (EELS) and photoluminescence (PL) at room temperature. These nanocrystals have different shapes and different faceting depending on the substrate used and their crystallographic orientation. EELS measurements have confirmed the high purity of these crystals. The observed PL peak was in the range of 0.9-0.95 eV. The strongest PL intensity was observed for the nanocrystals with the larger diameters.

  7. NIH's "Family Inn" Lets Out-of-Town Youngsters Stay "Home."

    ERIC Educational Resources Information Center

    Somerville, Sylvia

    1993-01-01

    The Children's Inn, on the grounds of the National Institutes for Health (NIH) near Washington, DC, serves as a national model of the value of family-centered homes for pediatric patients and their families. When parents bring their child to NIH from a distant place, they can stay in the inn with their child while the child is receiving treatment.…

  8. Electronic structures and work functions of InN(0001) films

    NASA Astrophysics Data System (ADS)

    Song, Jung-Hwan; Freeman, Arthur J.

    2007-03-01

    InN films have attracted great attention with its recently discovered band gap, 0.7eV, and evidence for p-type doping. We have studied theoretically the electronic structures, surfaces, and work functions of InN films using the highly precise FLAPW method. The passivation with pseudo-hydrogens has also been applied to the surfaces of InN(0001) films for comparison with the electronic structure of the ideal InN(0001) films. We compare the work functions of InN films with other wurtzite materials such as ZnO, GaN, and AlN, which we have also calculated. We discuss the mechanism of the structural transition with layer thickness for the very thin InN(0001) films, for which we have found that the ideal InN(0001) films of the wurtzite structure, up to 4 bilayers, optimize to the graphitic- like structure. We then discuss the relationship between the dipoles and the surfaces (work functions) of the InN(0001) films, and the possibilities of their p-type doping. R.E. Jones, et al, Phys. Rev. Lett, 96, 125505 (2006). Wimmer, Krakauer, Weinert, Freeman, Phys. Rev. B, 24, 864 (1981). K. Shiraishi, J. Phys. Soc. Jpn, 59, 3455 (1990) C. L. Freeman, et al, Phys. Rev. Lett, 96, 066102 (2006)

  9. The Little Inn at the Crossroads: A Spiritual Approach to the Design of a Leadership Course.

    ERIC Educational Resources Information Center

    Bento, Regina F.

    2000-01-01

    A course on spiritual dimensions of leadership was designed using the metaphor of an inn at a crossroads. The inn included a virtual library of Web-based texts and studio space for creativity and self-expression. Seven workshops explored the following themes: language of leadership and change, personal leadership qualities, vision and mission,…

  10. Direct current magnetron sputtering deposition of InN thin films

    NASA Astrophysics Data System (ADS)

    Cai, Xing-Min; Hao, Yan-Qing; Zhang, Dong-Ping; Fan, Ping

    2009-10-01

    In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

  11. Geothermal heating facilities for Frontier Inn, Susanville, California

    NASA Astrophysics Data System (ADS)

    1982-03-01

    A 38 unit motel composed of six major sections (coffee shop, A frame units, apartments, back units, two story units and office) was built over a number of years and exhibits widely varying types of construction. Space heating is provided by primarily electric resistance equipment with some propane use. Domestic hot water is provided primarily by propane with some electric resistance. The coffee shop uses fuel oil for both space and domestic hot water heating. A geothermal district heating system is being installed. Although the motel site is not located in the area of construction activity, it is expected that the pipeline will be extended. The potential of retrofitting the existing heating facilities at the inn to geothermal is studied.

  12. Intrinsic electronic properties of high-quality wurtzite InN

    NASA Astrophysics Data System (ADS)

    Eisele, H.; Schuppang, J.; Schnedler, M.; Duchamp, M.; Nenstiel, C.; Portz, V.; Kure, T.; Bügler, M.; Lenz, A.; Dähne, M.; Hoffmann, A.; Gwo, S.; Choi, S.; Speck, J. S.; Dunin-Borkowski, R. E.; Ebert, Ph.

    2016-12-01

    Recent reports suggested that InN is a highly unusual III-V semiconductor, whose behavior fundamentally differs from that of others. We therefore analyzed its intrinsic electronic properties on the highest available quality InN layers, demonstrating the absence of electron accumulation at the (10 1 ¯0 ) cleavage surface and in the bulk. The bulk electron density is governed solely by dopants. Hence, we conclude that InN acts similarly to the other III-V semiconductors and previously reported intriguing effects are related to low crystallinity, surface decomposition, nonstoichiometry, and/or In adlayers.

  13. Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates

    NASA Astrophysics Data System (ADS)

    Wang, Xiao; Zhang, Guozhen; Xu, Yang; Wu, Hao; Liu, Chang

    2017-02-01

    InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolumns were transferred onto p-type silicon substrates after etching off the AAO templates. Current-voltage characteristic of the transferred n-InN/p-Si heterojunctions shows on/off ratio as high as 4.65 × 103 at 2 V. This work offers a potential way to grow transferable devices with improving performances.

  14. Ambient pressure, low-temperature synthesis and characterization of colloidal InN nanocrystals

    PubMed Central

    Hsieh, Jennifer C.; Yun, Dong Soo; Hu, Evelyn

    2014-01-01

    Highly soluble, non-aggregated colloidal wurtzite InN nanocrystals were obtained through an ambient pressure, low-temperature method followed by post-synthesis treatment with nitric acid. PMID:25484524

  15. Two-dimensional electron gas in monolayer InN quantum wells

    SciTech Connect

    Pan, W. E-mail: e.dimakis@hzdr.de; Wang, G. T.; Dimakis, E. E-mail: e.dimakis@hzdr.de; Moustakas, T. D.; Tsui, D. C.

    2014-11-24

    We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10{sup 15 }cm{sup −2} (or 1.25 × 10{sup 14 }cm{sup −2} per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm{sup 2}/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

  16. Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy

    SciTech Connect

    Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E.; Luna, E.; Trampert, A.

    2007-07-09

    High quality InN nanocolumns have been grown by molecular beam epitaxy on bare and AlN-buffered Si(111) substrates. The accommodation mechanism of the InN nanocolumns to the substrate was studied by transmission electron microscopy. Samples grown on AlN-buffered Si(111) show abrupt interfaces between the nanocolumns and the buffer layer, where an array of periodically spaced misfit dislocations develops. Samples grown on bare Si(111) exhibit a thin Si{sub x}N{sub y} at the InN nanocolumn/substrate interface because of Si nitridation. The Si{sub x}N{sub y} thickness and roughness may affect the nanocolumn relative alignment to the substrate. In all cases, InN nanocolumns grow strain- and defect-free.

  17. Boron doped GaN and InN: Potential candidates for spintronics

    NASA Astrophysics Data System (ADS)

    Fan, S. W.; Huang, X. N.; Yao, K. L.

    2017-02-01

    The full potential linearized augmented plane wave method together with the Tran-Blaha modified Becke-Johnson potential is utilized to investigate the electronic structures and magnetism for boron doped GaN and InN. Calculations show the boron substituting nitrogen (BN defects) could induce the GaN and InN to be half-metallic ferromagnets. The magnetic moments mainly come from the BN defects, and each BN defect would produce the 2.00 μB total magnetic moment. The electronic structures indicate the carriers-mediated double exchange interaction plays a crucial role in forming the ferromagnetism. Positive chemical pair interactions imply the BN defects would form the homogeneous distribution in GaN and InN matrix. Moderate formation energies suggest that GaN and InN with BN defects could be fabricated experimentally.

  18. Polarity and microstructure in InN thin layers grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Kuwano, N.; Nakahara, Y.; Amano, H.

    2006-06-01

    Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed

  19. Synthesis and characterization of InP and InN colloidal quantum dots.

    SciTech Connect

    Boyle, Timothy J.; Osinski, Marek; Greenberg, Melisa; Bunge, Scott D.; Chen, Weiliang; Smolyakov, G. A.; Pulford, B. N.; Jiang, Ying-Bing

    2005-04-01

    InP quantum dots (QDs) with zinc blende structure and InN QDs with hexagonal structure were synthesized from appropriate organometallic precursors in a noncoordinating solvent using myristic acid as a ligand. The QDs were characterized by TEM, the associated energy dispersive spectroscopy (EDS), electron diffraction, and steady state UV-VIS optical absorption and photoluminescence spectroscopy. To our best knowledge, this paper reports synthesis of InN colloidal quantum dots for the first time.

  20. First-principles study of optical properties of InN nanosheet

    NASA Astrophysics Data System (ADS)

    Sarmazdeh, Masoud Majidiyan; Mendi, Roohallah Taghavi; Zelati, Amir; Boochani, Arash; Nofeli, Fariba

    2016-05-01

    Based on density functional theory (DFT), some optical properties of InN nanosheet, such as dielectric function, energy loss function, refractive index, reflectivity and absorption coefficient, have been calculated using the modified Becke-Johnson (mBJ) exchange-correlation potential and full potential-linearized augmented plane waves (FP-LAPW) method. The study of dielectric function show that optical properties of InN nanosheet are anisotropic and important energy range in the optical process is between low energies to 20 eV. The results indicate the plasmon energy of InN nanosheet occurs in the lower energy than bulk InN and in addition the plasmon energy in the in-plane direction is different from that perpendicular to the in-plane direction. The obtained optical gaps are 1.2 eV and 3.6 eV in perpendicular and parallel to c-axis, respectively. Study of refractive index and optical reflectivity shows that the superluminal phenomena occur in the several energy ranges for the InN nanosheet and this nanosheet has high transparency in a wide energy range. The results propose that the InN nanosheet is a good candidate for the optical communications applications, optoelectronics devices and transparent coatings.

  1. Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth

    SciTech Connect

    Kamimura, J.; Kishino, K.; Kikuchi, A.

    2015-02-28

    Very thick InN (∼40 μm) was grown by molecular beam epitaxy using the epitaxial lateral overgrowth (ELO) technique. In some regions, the ELO of InN was observed as expected, indicating an important step toward fabricating quasi-bulk InN substrates. Interestingly, most parts of the sample consist of large flat-topped microcrystals and well-faceted microstructures. This is likely due to local growth condition variations during ELO, which is supported by an experiment where ELO of InN was performed on a substrate with various stripe mask patterns. TEM characterization of a flat top InN microcrystal revealed few stacking faults and only related threading dislocations. Defect-free small faceted microcrystals were also observed. The thick InN crystals show a narrow photoluminescence spectrum with a peak at 0.679 eV and linewidth of 16.8 meV at 4 K.

  2. Relation Between Structural and Optical Properties of InN and InxGa1-xN Thin Films

    DTIC Science & Technology

    2009-01-01

    Keywords: InN InGaN structural and optical properties Abstract: <p>Transmission Electron Microscopy (TEM) and optical measurements obtained from InN and...In1-xGaxNfilms (0 < x < 0.54) grown by Molecular Beam Epitaxy are presented. Energy gaps measured byabsorption, PR, and PL for InN films grown on c...and optical measurements obtained from InN and In1-xGaxN films (0 < x < 0.54) grown by Molecular Beam Epitaxy are presented. Energy gaps measured by

  3. Large area InN terahertz emitters based on the lateral photo-Dember effect

    SciTech Connect

    Wallauer, Jan Grumber, Christian; Walther, Markus; Polyakov, Vladimir; Iannucci, Robert; Cimalla, Volker; Ambacher, Oliver

    2015-09-14

    Large area terahertz emitters based on the lateral photo-Dember effect in InN (indium nitride) are presented. The formation of lateral photo-Dember currents is induced by laser-illumination through a microstructured metal cover processed onto the InN substrate, causing an asymmetry in the lateral photogenerated charge carrier distribution. Our design uses simple metal structures, which are produced by conventional two-dimensional micro-structuring techniques. Having favoring properties as a photo-Dember material InN is particularly well-suited as a substrate for our emitters. We demonstrate that the emission intensity of the emitters can be significantly influenced by the structure of the metal cover leaving room for improvement by optimizing the masking structures.

  4. Terahertz detectors arrays based on orderly aligned InN nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Xuechen; Liu, Huiqiang; Li, Qiuguo; Chen, Hao; Peng, Rufang; Chu, Sheng; Cheng, Binbin

    2015-08-01

    Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

  5. Stopping Power Of He, C And O In InN

    SciTech Connect

    Barradas, N. P.; Alves, E.; Siketic, Z.; Radovic, I. Bogdanovic

    2011-06-01

    Group III nitrides such as InN, GaN, and their alloys are increasingly important in a host of optoelectronic and electronic devices. The presence of unintentional impurities is one of the factors that can strongly affect the electronic properties of these materials, and thus ion beam analysis techniques can play a fundamental role, in particular heavy ion elastic recoil detection analysis tracing and quantifying these contaminations. However, stopping powers in InN and GaN have not yet been measured, and data analysis relies on using the Bragg rule, which is often inaccurate. We have used a bulk method, previously developed by us and applied successfully to other systems, to determine experimentally the stopping power of several ions in InN. The results of our measurements and bulk method analysis are presented.

  6. Anomalous magnetism of superconducting Mg-doped InN film

    NASA Astrophysics Data System (ADS)

    Chang, P. H.; Hong, S. Y.; Lin, W. T.; Guo, Y. X.

    2016-02-01

    We report on the Meissner effect of Mg-doped InN film with superconducting transition onset temperature Tc,onset of 5 K. Mg-doped InN is magnetically ordered and exhibits a simultaneous first-order magnetic and electric transition near 50 K. Its behavior is similar to that of iron-based superconductors. A strong correlation is proposed to exist between structural distortion and superconductivity when Mg is doped into InN. The suppression of magnetic ordering close to Tc by doping is further demonstrated by anisotropic magnetoresistance and M-H measurements. The findings suggest that the superconducting mechanism in the system may not be conventional BCS.

  7. Raman scattering study of anharmonic phonon decay in InN

    NASA Astrophysics Data System (ADS)

    Domènech-Amador, Núria; Cuscó, Ramon; Artús, Luis; Yamaguchi, Tomohiro; Nanishi, Yasushi

    2011-06-01

    We present Raman scattering measurements on wurtzite InN over a temperature range from 80 to 660 K. To investigate all phonon modes of the wurtzite structure, measurements were performed on c and m faces of high-quality InN epilayers. High-resolution measurements of the low-frequency E2 mode reveal a slight anharmonic broadening of such a long-lived phonon due to up-conversion processes and a substantial contribution of background impurity broadening in the determination of its linewidth. An analysis of the anharmonicity and lifetimes of the InN phonons is carried out. Possible decay channels including up-conversion processes and four-phonon processes are discussed on the basis of density functional theory calculations.

  8. Terahertz detectors arrays based on orderly aligned InN nanowires

    PubMed Central

    Chen, Xuechen; Liu, Huiqiang; Li, Qiuguo; Chen, Hao; Peng, Rufang; Chu, Sheng; Cheng, Binbin

    2015-01-01

    Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series. PMID:26289498

  9. Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

    NASA Astrophysics Data System (ADS)

    Segura-Ruiz, J.; Molina-Sánchez, A.; Garro, N.; García-Cristóbal, A.; Cantarero, A.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

    2010-09-01

    Photoluminescence excitation (PLE) spectra have been measured for a set of self-assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular-beam epitaxy. The PLE experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN NW. The differences in the PLE spectra can be accounted for the inhomogeneous electron distribution within the NWs caused by a bulk donor concentration (ND+) and a two-dimensional density of ionized surface states (Nss+) . For NW radii larger than 30 nm, ND+ and Nss+ modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data.

  10. Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates.

    PubMed

    Wang, Xiao; Zhang, Guozhen; Xu, Yang; Wu, Hao; Liu, Chang

    2017-12-01

    InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolumns were transferred onto p-type silicon substrates after etching off the AAO templates. Current-voltage characteristic of the transferred n-InN/p-Si heterojunctions shows on/off ratio as high as 4.65 × 10(3) at 2 V. This work offers a potential way to grow transferable devices with improving performances.

  11. Two-dimensional electron gas in monolayer InN quantum wells

    SciTech Connect

    Pan, Wei; Dimakis, Emmanouil; Wang, George T.; Moustakas, Theodore D.; Tsui, Daniel C.

    2014-11-24

    We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×1015 cm-2 and 420 cm2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

  12. Two-dimensional electron gas in monolayer InN quantum wells

    DOE PAGES

    Pan, Wei; Dimakis, Emmanouil; Wang, George T.; ...

    2014-11-24

    We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×1015 cm-2 and 420 cm2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

  13. Sulfur passivation of surface electrons in highly Mg-doped InN

    NASA Astrophysics Data System (ADS)

    Linhart, W. M.; Chai, J.; McConville, C. F.; Durbin, S. M.; Veal, T. D.

    2013-09-01

    Electron accumulation with a sheet density greater than 1013 cm-2 usually occurs at InN surfaces. Here, the effects of treatment with ammonium sulfide ((NH4)2Sx) on the surface electronic properties of highly Mg-doped InN (>4×1018 cm-3) have been investigated with high resolution x-ray photoemission spectroscopy. The valence band photoemission spectra show that the surface Fermi level decreases by approximately 0.08 eV with (NH4)2Sx treatment, resulting in a decrease of the downward band bending and up to a 70% reduction in the surface electron sheet density.

  14. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

    NASA Astrophysics Data System (ADS)

    Jantawongrit, P.; Sanorpim, S.; Yaguchi, H.; Orihara, M.; Limsuwan, P.

    2015-08-01

    InN film was grown on 4H-SiC (0001) substrate by RF plasma-assisted molecular beam epitaxy (RF-MBE). Prior to the growth of InN film, an InN buffer layer with a thickness of ∼5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy (TEM). The results show that a high density of line contrasts, parallel to the growth direction (c-axis), was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g=11\\bar{2}0 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains. Project supported by the Thailand Center of Excellence in Physics (ThEP) and the King Mongkut's University of Technology Thonburi under The National Research University Project. One of the authors (S. Sanorpim) was supported by the National Research Council of Thailand (NRCT) and the Thai Government Stimulus Package 2 (TKK2555), under the Project for Establishment of Comprehensive Center for Innovative Food, Health Products and Agriculture.

  15. Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE

    PubMed Central

    2012-01-01

    This paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN template. Scanning electron microscopic images of the surface morphology revealed a two-dimensional growth at a rate of approximately 0.85 μm/h. Cross-sectional transmission electron microscopy images identified a sharp InN/GaN interface and a clear epitaxial orientation relationship of [0001]InN // [0001]GaN and ( 2¯110)InN // ( 2¯110)GaN. The optical properties of wurtzite InN nanorods were determined according to the photoluminescence, revealing a band gap of 0.77 eV. PMID:22908859

  16. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Tetragonal Distortion of InN Thin Films by RBS/Channeling

    NASA Astrophysics Data System (ADS)

    Ding, Zhi-Bo; Wu, Wei; Wang, Kun; Fa, Tao; Yao, Shu-De

    2009-08-01

    Rutherford backscattering and channeling spectrometry (RBS/C) are used to identify the crystalline quality (χ min = 4.87%) of an InN thin film as a function of depth, and make a non-destructive quantitative analysis of the structure, in order to analyze the tetragonal distortion of the InN thin film at the depth determined.

  17. Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates

    SciTech Connect

    Kehagias, Th.; Dimitrakopulos, G. P.; Koukoula, T.; Komninou, Ph.; Ajagunna, A. O.; Georgakilas, A.; Tsagaraki, K.; Adikimenakis, A.

    2013-10-28

    Transmission electron microscopy has been employed to analyze the direct nucleation and growth, by plasma-assisted molecular beam epitaxy, of high quality InN (0001) In-face thin films on (111) Si substrates. Critical steps of the heteroepitaxial growth process are InN nucleation at low substrate temperature under excessively high N-flux conditions and subsequent growth of the main InN epilayer at the optimum conditions, namely, substrate temperature 400–450 °C and In/N flux ratio close to 1. InN nucleation occurs in the form of a very high density of three dimensional (3D) islands, which coalesce very fast into a low surface roughness InN film. The reduced reactivity of Si at low temperature and its fast coverage by InN limit the amount of unintentional Si nitridation by the excessively high nitrogen flux and good bonding/adhesion of the InN film directly on the Si substrate is achieved. The subsequent overgrowth of the main InN epilayer, in a layer-by-layer growth mode that enhances the lateral growth of InN, reduces significantly the crystal mosaicity and the density of threading dislocations is about an order of magnitude less compared to InN films grown using an AlN/GaN intermediate nucleation/buffer layer on Si. The InN films exhibit the In-face polarity and very smooth atomically stepped surfaces.

  18. Golf Tournament Drives in a Win for the Children’s Inn | Poster

    Cancer.gov

    By Carolynne Keenan, Contributing Writer On September 23, golfers took to the Clustered Spires golf course in Frederick, Md., for a cause. The R&W Club Frederick hosted its inaugural golf tournament, with proceeds benefiting the National Institutes of Health (NIH) Children’s Inn.

  19. Dopants and Defects in InN and InGaN Alloys

    SciTech Connect

    Walukiewicz, W.; Jones, R.E.; Li, S.X.; Yu, K.M.; Ager III, J.W.; Haller, E.E.; Lu, H.; Schaff, W.J.

    2005-04-01

    We have performed systematic studies of the effects of high-energy particle irradiation on the properties of InGaN alloys. In agreement with the amphoteric defect model, irradiation of InN produces donor-like defects. The electron concentration increases with increasing radiation dose and saturates at 4 x 10{sup 20} cm{sup -3} at very high doses. We find that the increase of the electron concentration causes a large blue-shift of the absorption edge, which is well-explained by the Burstein-Moss effect. The maximum electron concentration decreases with increasing Ga fraction in irradiated In{sub 1-x}Ga{sub x}N alloys as the conduction band edge approaches the Fermi level stabilization energy (E{sub FS}). For x > 0.66 the conduction band edge moves above E{sub FS} and the irradiation of n-type films produces acceptor-like defects, resulting in a reduced free electron concentration. An analysis of the concentration dependence of the electron mobility in InN indicates that the dominant defects in irradiated InN are triply-charged donors. Finally, we show that InN films doped with Mg acceptors behave like undoped films above a threshold radiation dose.

  20. The Children's Inn at NIH turns 25 | NIH MedlinePlus the Magazine

    MedlinePlus

    ... Woodmont House, can accommodate up to 64 patient-families while their children are being treated at the NIH Clinical Center. The Inn has a playroom, kids' computer room, bistro, game room, learning center, business center, reflection space, teen lounge, arts and crafts ...

  1. Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy

    NASA Astrophysics Data System (ADS)

    Sarwar, A. T. M. Golam; Yang, Fan; Esser, Bryan D.; Kent, Thomas F.; McComb, David W.; Myers, Roberto C.

    2016-06-01

    Self-assembly of hexagonal InN micro-mushrooms on Si (111) substrates by molecular beam epitaxy is reported. Scanning electron microscopy (SEM) reveals hexagonal mushroom caps with smooth top surfaces and a step-like morphology at the bottom surface. A detailed growth study along with SEM measurements reveals that an upside-down pendeoepitaxy mechanism underlies the formation of these structures. Cryogenic temperature photoluminescence measurements on the InN disks show a dominant band-to-acceptor recombination peak at 0.68 eV. Cross-section annular bright field (ABF-) scanning transmission electron microscopy (STEM) reveals that the growth of these structures occurs along the [ 000 1 bar ] crystallographic orientation (N-face). Plan-view high angle annular dark field (HAADF) STEM in the center of the micro-disks reveals a hexagonal lattice indicative of stacking faults. However, at the outskirt of the micro-disk, surprisingly, a honeycomb lattice is observed in plan view STEM indicating a perfect freestanding Wurtzite InN disk that is free of stacking faults. This result opens a pathway for realizing strain-free, freestanding InN substrates.

  2. Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

    SciTech Connect

    Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S. M.

    2012-10-15

    The issue of ambiguous values of the band gap (0.6 to 2 eV) of InN thin film in literature has been addressed by a careful experiment. We have grown wurtzite InN films by PA-MBE simultaneously on differently modified c-plane sapphire substrates and characterized by complementary structural and chemical probes. Our studies discount Mie resonances caused by metallic In segregation at grain boundaries as the reason for low band gap values ( Almost-Equal-To 0.6 eV) and also the formation of Indium oxides and oxynitrides as the cause for high band gap value ( Almost-Equal-To 2.0 eV). It is observed that polycrystallinity arising from azimuthal miss-orientation of c-oriented wurtzite InN crystals increases the carrier concentration and the band gap values. We have reviewed the band gap, carrier concentration, and effective mass of InN in literature and our own measurements, which show that the Moss-Burstein relation with a non-parabolic conduction band accounts for the observed variation of band gap with carrier concentration.

  3. Nanostructural and electronic properties of polytypes in InN nanocolumns

    SciTech Connect

    Kioseoglou, J.; Koukoula, T.; Komninou, Ph.; Kehagias, Th.; Georgakilas, A.; Androulidaki, M.

    2013-08-21

    Transmission electron microscopy techniques and density functional theory calculations were employed to investigate the nanostructural and electronic properties of InN polytypes observed in InN nanocolumns, grown on Si(111) by molecular beam epitaxy. Moiré fringes and alternating hexagonal and cubic lattice stacking sequences along the c-axis, observed among the wurtzite layers, implied the presence of different structures embedded in the basic 2H structure of the nanocolumns. Quantitative electron diffraction analysis and high-resolution image simulations verified the coexistence of the wurtzite structure with the 4H, 6H, and the 3C zinc-blende structural polytypes. Total energies calculations established the 2H wurtzite structure as the most stable polytype. The band gap of all polytypes was found direct with the energies and the band gaps of the 4H (E{sub g} = 0.64 eV) and 6H (E{sub g} = 0.60 eV) structures calculated between the corresponding values of the 2H (E{sub g} = 0.75 eV) and 3C (E{sub g} = 0.49 eV) basic structures. Theoretical and experimental analysis showed that at the initial stages of growth InN nanocolumns were under tensile strain along both the basal plane and growth direction. Structural polytypes were then introduced in the form of embedded inclusions to accommodate the excess tensile strain along the growth direction, allowing the entire process of polymorphism to be the dominant strain relaxation mechanism of InN nanocolumns. Moreover, the lattice and energetic properties and band gap values of InN polytypes showed a linear dependence on hexagonality, while the presence of polytypes led to a characteristic broadening of the photoluminescence emission peak toward lower emission energies.

  4. In induced reconstructions of Si(1 1 1) as superlattice matched epitaxial templates for InN growth

    SciTech Connect

    Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S.M.

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► A novel growth method to form InN at low growth temperatures. ► Use of Si reconstruction as a growth template for group III nitrides. ► Band gap variation of InN – Moss–Burstein shift – non-parabolic conduction band for InN. ► Super lattice matching epitaxy of metal induced reconstructions with III–V unit cell. -- Abstract: Indium induced surface reconstructions of Si(1 1 1)-7 × 7 are used as templates to grow high quality InN. We grow InN on Si(1 1 1)-7 × 7, Si(1 1 1)-4 × 1-In and Si(1 1 1)-1 × 1-In reconstructed surfaces and study the quality of the films formed using complementary characterization tools. InN grown on Si(1 1 1)-1 × 1-In reconstruction shows superior film quality with lowest band-edge emission having a narrow full width at half maximum, intense and narrow 0 0 0 2 X-ray diffraction, low surface roughness and carrier concentration an order lower than other samples. We attribute the high quality of the film formed at 300 °C to the integral matching of InN and super lattice dimensions, we also study the reasons for the band gap variation of InN in the literature. Present study demonstrates the proposed Superlattice Matched Epitaxy can be a general approach to grow good quality InN at much lower growth temperature on compatible In induced reconstructions of the Si surface.

  5. InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

    NASA Astrophysics Data System (ADS)

    Lye, Khe Shin; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-07-01

    Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.

  6. High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

    NASA Astrophysics Data System (ADS)

    Hsiao, Ching-Lien; Liu, Ting-Wei; Wu, Chien-Ting; Hsu, Hsu-Cheng; Hsu, Geng-Ming; Chen, Li-Chyong; Shiao, Wen-Yu; Yang, C. C.; Gällström, Andreas; Holtz, Per-Olof; Chen, Chia-Chun; Chen, Kuei-Hsien

    2008-03-01

    High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20K shows a peak at a very low energy, 0.636eV, and an absorption edge at ˜0.62eV is observed at 2K, which is the lowest bandgap reported to date among the III-nitride semiconductors.

  7. Epitaxial relationship of semipolar s-plane (1101) InN grown on r-plane sapphire

    SciTech Connect

    Dimitrakopulos, G. P.

    2012-07-02

    The heteroepitaxy of semipolar s-plane (1101) InN grown directly on r-plane sapphire by plasma-assisted molecular beam epitaxy is studied using transmission electron microscopy techniques. The epitaxial relationship is determined to be (1101){sub InN} Parallel-To (1102){sub Al{sub 2O{sub 3}}}, [1120]{sub InN} Parallel-To [2021]{sub Al{sub 2O{sub 3}}}, [1102]{sub InN}{approx} Parallel-To [0221]{sub Al{sub 2O{sub 3}}}, which ensures a 0.7% misfit along [1120]{sub InN}. Two orientation variants are identified. Proposed geometrical factors contributing to the high density of basal stacking faults, partial dislocations, and sphalerite cubic pockets include the misfit accommodation and reduction, as well as the accommodation of lattice twist.

  8. R&W Club Frederick Raises $1,500 for The Children’s Inn at Annual Golf Tournament | Poster

    Cancer.gov

    Forty-four government and contractor employees, along with their friends and family members, took to the Maryland National Golf Club course this fall for a cause. The R&W Club Frederick held its third annual golf tournament at the Middletown, Md., golf course on Sept. 14 to raise funds for The Children’s Inn at NIH, which celebrated its 25th anniversary this year. The Inn provides support and a home away from home for seriously ill children and their families receiving treatment at the NIH Clinical Center. Through the tournament, the club raised approximately $1,500 for The Children’s Inn, according to Tanya Ransom, biologist, NCI Center for Cancer Research, and secretary of the R&W Club Frederick. She also coordinated the golf tournament. After the tournament, a silent auction of sports memorabilia and collectibles, sponsored by Great Moments, Frederick, was held, and a portion of the proceeds also went to the Inn.

  9. Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

    NASA Astrophysics Data System (ADS)

    Liu, K. W.; Young, S. J.; Chang, S. J.; Hsueh, T. H.; Chen, Y. Z.; Chen, K. J.; Hung, H.; Wang, S. M.; Wu, Y. L.

    2012-05-01

    This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism.

  10. Compensating point defects in {sup 4}He{sup +}-irradiated InN

    SciTech Connect

    Tuomisto, F.; Pelli, A.; Yu, K. M.; Walukiewicz, W.; Schaff, W. J.

    2007-05-15

    We use positron annihilation spectroscopy to study 2 MeV {sup 4}He{sup +}-irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a rate of 3600 cm{sup -1}. The In vacancies are introduced at a significantly lower rate of 100 cm{sup -1}, making them negligible in the compensation of the irradiation-induced additional n-type conductivity in InN. On the other hand, negative non-open volume defects are introduced at a rate higher than 2000 cm{sup -1}. These defects are tentatively attributed to interstitial nitrogen and may ultimately limit the free-electron concentration at high irradiation fluences.

  11. Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature

    SciTech Connect

    Dhara, S.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Sastry, V.S.; Nair, K.G.M.; Hsu, G.M.; Chen, L.C.; Chen, K.H.; Santhakumar, K.; Soga, T.

    2006-06-12

    The InN phase is grown in crystalline InP(100) substrates by 50 keV N{sup +} implantation at an elevated temperature of 400 deg. C followed by annealing at 525 deg. C in N{sub 2} ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak {approx}1.06 eV at temperatures {<=}150 K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.

  12. Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

    PubMed Central

    Li, Huijie; Zhao, Guijuan; Wang, Lianshan; Chen, Zhen; Yang, Shaoyan

    2016-01-01

    Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials. PMID:28335323

  13. Reconstruction of an inn fire scene using the Fire Dynamics Simulator (FDS) program.

    PubMed

    Chi, Jen-Hao

    2013-01-01

    An inn fire occurring in the middle of the night usually causes a great deal more injuries and deaths. This article examines the case study of an inn fire accident that resulted in the most serious casualties in Taiwan's history. Data based on the official fire investigation report and NFPA921 regulations are used, and the fire scenes are reconstructed using the latest Fire Dynamics Simulator (FDS) program from NIST. The personnel evacuation time and time variants for various fire hazard factors of reconstructive analysis clarify the reason for such a high number of casualties. It reveals that the FDS program has come to play an essential role in fire investigation. The close comparison between simulation result and the actual fire scene also provides fire prevention engineers, a possible utilization of FDS to examine the effects of improved schemes for fire safety of buildings.

  14. Solar hot water system installed at Days Inn Motel, Dallas, Texas (Valley View)

    SciTech Connect

    1980-09-01

    The solar hot water system installed in the Days Inns of America, Inc., Days Inn Motel (120 rooms), I-35/2276 Valley View Lane, Dallas, Texas is described. The solar system was designed by ILI Incorporated to provide 65 percent of the total domestic hot water (DHW) demand. The Solar Energy Products, model CU-30WW liquid (water) flat plate collector (1000 square feet) system automatically drains into the 1000 gallon steel storage tank when the solar pump is not running. This system is one of eleven systems planned. Heat is transferred from the DHW tanks through a shell and tube heat exchanger. A circulating pump between the DHW tanks and heat exchanger enables solar heated water to help make up standby losses. All pumps are controlled by differential temperature controllers. The operation of this system was begun March 11, 1980. The solar components were partly funded ($15,000 of 30,000 cost) by a Department of Energy grant.

  15. Circular photogalvanic effect at inter-band excitation in InN

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Zhang, R.; Liu, B.; Xie, Z. L.; Xiu, X. Q.; Han, P.; Lu, H.; Zheng, Y. D.; Chen, Y. H.; Tang, C. G.; Wang, Z. G.

    2008-01-01

    The circular photogalvanic effect (CPGE) is observed in InN at inter-band excitation. The function of the CPGE induced current on laser helicity is experimentally demonstrated and illustrated with the microscopic model. A spin-dependent current obtained in InN is one order larger than in the AlGaN/GaN heterostructures at inter-band excitation. The dependence of CPGE current amplitude on light power and incident angle can be well evaluated with phenomenological theory. This sizeable spin-dependent current not only provides an opportunity to realize spin polarized current at room temperature, but also can be utilized as a reliable tool of spin splitting investigation in semiconductors.

  16. Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

    NASA Astrophysics Data System (ADS)

    Kamimura, J.; Bogdanoff, P.; Ramsteiner, M.; Geelhaar, L.; Riechert, H.

    2016-07-01

    InN nanowires were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. Raman spectroscopy showed that the nanowires were strain-free and allowed the deduction of a free carrier concentration of 1-2 × 1018 cm-3. This value was confirmed by a Mott-Schottky analysis of electrolyte-based capacitance-voltage measurements. In addition, these measurements directly revealed the existence of a surface accumulation layer in the InN nanowires. In cyclic voltammetry measurements under irradiation from a Xe lamp with about 100 mW cm-2, high photocurrents of about 4 and 11 mA cm-2 were observed at 1.23 and 1.63 V bias potential versus reversible hydrogen electrode, respectively, using H2O2 as a hole scavenger. By comparing the photocurrent with and without H2O2, the main limiting factor in the performance of InN nanowire photoanodes was identified to be the poor catalytic efficiency for water oxidation at the surface, followed by parasitic bulk recombination.

  17. Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire

    SciTech Connect

    Ajagunna, A. O.; Iliopoulos, E.; Tsiakatouras, G.; Tsagaraki, K.; Androulidaki, M.; Georgakilas, A.

    2010-01-15

    The heteroepitaxy of a-plane (1120) InN films on r-plane (1102) sapphire substrates, by nitrogen radio frequency plasma-assisted molecular beam epitaxy, has been investigated and compared to that of c-plane (0001) InN. The epitaxial growth of a-plane InN proceeded through the nucleation, growth, and coalescence of three-dimensional islands, resulting in surface roughness that increased monotonically with epilayer thickness. The full width at half maximum of (1120) x-ray diffraction rocking curves decreased significantly with increasing InN thickness, characteristic of structural improvement, and it reached the value of 24 arcmin for a 1 {mu}m thick film. Hall-effect measurements exhibited a similar dependence of electron concentration and mobility on thickness for both the a- and c-plane InN films. The analysis of the Hall-effect measurements, by considering the contribution of two conducting layers, indicates a similar accumulation of low mobility electrons with N{sub s}>10{sup 14} cm{sup -2} at the films' surface/interfacial region for both the a- and c-plane InN films. From optical transmittance measurements, the absorption edge of 0.768 eV was determined for the 1 {mu}m a-plane film, consistent with the expected Burstein-Moss effect. Photoluminescence spectra exhibited a lower energy peak at 0.631 eV, suggesting defect-related transitions.

  18. Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)

    NASA Astrophysics Data System (ADS)

    Haider, Ali; Kizir, Seda; Biyikli, Necmi

    2016-04-01

    In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments were trimethylindium (TMI) and N2 plasma. Process parameters including TMI pulse time, N2 plasma exposure time, purge time, and deposition temperature have been optimized for self-limiting growth of InN with in ALD window. With the increase in exposure time of N2 plasma from 40 s to 100 s at 200 °C, growth rate showed a significant decrease from 1.60 to 0.64 Å/cycle. At 200 °C, growth rate saturated as 0.64 Å/cycle for TMI dose starting from 0.07 s. Structural, optical, and morphological characterization of InN were carried out in detail. X-ray diffraction measurements revealed the hexagonal wurtzite crystalline structure of the grown InN films. Refractive index of the InN film deposited at 200 °C was found to be 2.66 at 650 nm. 48 nm-thick InN films exhibited relatively smooth surfaces with Rms surface roughness values of 0.98 nm, while the film density was extracted as 6.30 g/cm3. X-ray photoelectron spectroscopy (XPS) measurements depicted the peaks of indium, nitrogen, carbon, and oxygen on the film surface and quantitative information revealed that films are nearly stoichiometric with rather low impurity content. In3d and N1s high-resolution scans confirmed the presence of InN with peaks located at 443.5 and 396.8 eV, respectively. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) further confirmed the polycrystalline structure of InN thin films and elemental mapping revealed uniform distribution of indium and nitrogen along the scanned area of the InN film. Spectral absorption measurements exhibited an optical band edge around 1.9 eV. Our findings demonstrate that HCPA-ALD might be a promising technique to grow crystalline wurtzite InN thin films at low substrate temperatures.

  19. High Cubic-Phase Purity InN on MgO (001) Using Cubic-Phase GaN as a Buffer Layer

    SciTech Connect

    Sanorpim, S.; Kuntharin, S.; Parinyataramas, J.; Yaguchi, H.; Iwahashi, Y.; Orihara, M.; Hijikata, Y.; Yoshida, S.

    2011-12-23

    High cubic-phase purity InN films were grown on MgO (001) substrates by molecular beam epitaxy with a cubic-phase GaN buffer layer. The cubic phase purity of the InN grown layers has been analyzed by high resolution X-ray diffraction, {mu}-Raman scattering and transmission electron microscopy. It is evidenced that the hexagonal-phase content in the InN overlayer much depends on hexagonal-phase content in the cubic-phase GaN buffer layer and increases with increasing the hexagonal-phase GaN content. From Raman scattering measurements, in addition, the InN layer with lowest hexagonal component (6%), only Raman characteristics of cubic TO{sub InN} and LO{sub InN} modes were observed, indicating a formation of a small amount of stacking faults, which does not affect on vibrational property.

  20. InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liu, Kuang-Wei; Chang, Shoou-Jinn; Young, Sheng-Joue; Hsueh, Tao-Hung; Hung, Hung; Mai, Yu-Chun; Wang, Shih-Ming; Chen, Kuan-Jen; Wu, Ya-Ling; Chen, Yue-Zhang

    2011-07-01

    The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

  1. Infrared analysis of hole properties of Mg-doped p-type InN films

    SciTech Connect

    Fujiwara, Masayuki; Ishitani, Yoshihiro; Wang Xinqiang; Che, Song-Bek; Yoshikawa, Akihiko

    2008-12-08

    Mg-doped InN films grown by plasma-assisted molecular beam epitaxy were characterized by infrared reflectance. Signatures of p-type conductivity in the spectra were obtained in the same doping density range where the existence of net acceptors was found by electrolyte capacitance-voltage measurements. Numerical spectrum analysis, which takes into account the large broadening factor of the normal mode energies of longitudinal optical phonon-plasmon coupling yielded high hole densities in the range of (0.1-1.2)x10{sup 19} cm{sup -3} and optical mobilities in the range of 25-70 cm{sup 2}/V s.

  2. Nqrs Data for C10H12Br5Cl2InN2O [C10H10Br5Cl2InN2·H2O] (Subst. No. 1254)

    NASA Astrophysics Data System (ADS)

    Chihara, H.; Nakamura, N.

    This document is part of Subvolume A `Substances Containing Ag … C10H15' of Volume 48 `Nuclear Quadrupole Resonance Spectroscopy Data' of Landolt-Börnstein - Group III `Condensed Matter'. It contains an extract of Section `3.2 Data tables' of the Chapter `3 Nuclear quadrupole resonance data' providing the NQRS data for C10H12Br5Cl2InN2O [C10H10Br5Cl2InN2·H2O] (Subst. No. 1254)

  3. Near-infrared InN quantum dots on high-In composition InGaN

    SciTech Connect

    Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard

    2013-04-01

    We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

  4. A comparative investigation on sub-micrometer InN and GaN Gunn diodes working at terahertz frequency

    NASA Astrophysics Data System (ADS)

    Yang, Lin'an; Long, Shuang; Guo, Xin; Hao, Yue

    2012-05-01

    We report on a simulation for wurtzite-InN and GaN Gunn diodes with notch-doping and uniform-doping structural transit regions. Results show that 0.3-1.0 μm Gunn diodes with a diode area of 500 μm2 can generate fundamental frequencies of around 0.2-0.8 THz and rf currents of several hundred mA. InN diodes exhibit more stable oscillations, whereas GaN diodes generate higher oscillation frequencies at both dipole-domain mode and accumulation-domain mode due to different negative differential resistance (NDR) characteristics of high-field transport. The sharp NDR region of InN makes it more suitable for short transit region Gunn diode. Higher Irf/Iav and lower bias voltage in InN Gunn diode imply its conversion efficiency significantly higher than GaN diode.

  5. Planar n +-in-n silicon pixel sensors for the ATLAS IBL upgrade

    NASA Astrophysics Data System (ADS)

    Goessling, C.; Klingenberg, R.; Muenstermann, D.; Rummler, A.; Troska, G.; Wittig, T.

    2011-09-01

    The ATLAS experiment at the LHC is planning to upgrade its pixel detector by the installation of a 4th pixel layer, the insertable b-layer IBL with a mean sensor radius of only 32 mm from the beam axis. Being very close to the beam, the radiation damage of the IBL sensors might be as high as 5×10 15 n eq cm -2 at their end-of-life. To investigate the radiation hardness and suitability of the current ATLAS pixel sensors for IBL fluences, n +-in-n silicon pixel sensors from the ATLAS Pixel production have been irradiated by reactor neutrons to the IBL design fluence and been tested with pions at the SPS and with electrons from a 90Sr source in the laboratory. The collected charge was found to exceed 10 000 electrons per MIP at 1 kV of bias voltage which is in agreement with data collected with strip sensors. With an expected threshold of 3000-4000 electrons, this result suggests that planar n +-in-n pixel sensors are radiation hard enough to be used as IBL sensor technology.

  6. From Amateur Astronomer to Observatory Director: The Curious Case of R. T. A. Innes

    NASA Astrophysics Data System (ADS)

    Orchiston, Wayne

    Robert Innes was one of a select band of amateur astronomers who made the transition to professional ranks towards the end of the nineteenth century. Initially he had a passion for mathematical astronomy, but after settling in Sydney he developed a taste for observational astronomy, specialising in the search for new double stars. He quickly became known for his success in this field and for his publications on solar system perturbations, and with John Tebbutt's patronage managed to secure a clerical position at the Royal Observatory, Cape of Good Hope. Once there he continued to observe in his spare time and to publish, and, with strong support from Sir David Gill, was appointed founding Director of the Transvaal Observatory. By the time he died in 1933, Innes had received an honorary D.Sc. from Leiden University, and had established an international reputation as a positional astronomer. This paper provides an interesting case study of a well-known `amateur-turned-professional', and an example of the ways in which patronage played a key role in nineteenth and early twentieth century Australian and South African astronomy.

  7. Growth of wurtzite InN on bulk In{sub 2}O{sub 3}(111) wafers

    SciTech Connect

    Sadofev, Sergey; Cho, Yong Jin; Brandt, Oliver; Ramsteiner, Manfred; Calarco, Raffaella; Riechert, Henning; Erwin, Steven C.; Galazka, Zbigniew; Korytov, Maxym; Albrecht, Martin; Uecker, Reinhard; Fornari, Roberto

    2012-10-22

    A single phase InN epitaxial film is grown on a bulk In{sub 2}O{sub 3}(111) wafer by plasma-assisted molecular beam epitaxy. The InN/In{sub 2}O{sub 3} orientation relationship is found to be (0001) parallel (111) and [1100] parallel [112]. High quality of the layer is confirmed by the small widths of the x-ray rocking curves, the sharp interfaces revealed by transmission electron microscopy, the narrow spectral width of the Raman E{sub 2}{sup h} vibrational mode, and the position of the photoluminescence band close to the fundamental band gap of InN.

  8. Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

    SciTech Connect

    Jing, Qiang; Wu, Guoguang; Zhang, Yuantao; Gao, Fubin; Cai, Xupu; Zhao, Yang; Li, Wancheng Du, Guotong

    2014-08-11

    The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be −0.10 ± 0.23 eV and the conduction band offset is deduced to be −2.47 ± 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices.

  9. A Dance Class, a Drag King, & the Pedagogical Possibilities of Performative Hip-Hop: An Interview with Carmen Morrison & Alex U. Inn

    ERIC Educational Resources Information Center

    Schönfeldt-Aultman, Scott M.; Morrison, Carmen

    2015-01-01

    Alex U. Inn is the co-founder and one of the two MCs of the hip-hop drag king group, Momma's Boyz. Momma's Boyz celebrated their tenth anniversary in 2014. Carmen Morrison is the offstage name of Alex U. Inn, though "Carmen" now goes by Alex offstage, as well. Within this interview, the names "Carmen" and "Alex" are…

  10. Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms.

    PubMed

    Gao, Fangliang; Wen, Lei; Xu, Zhenzhu; Han, Jinglei; Yu, Yuefeng; Zhang, Shuguang; Li, Guoqiang

    2017-04-06

    The effects of the growth parameters on the uniformity and the aspect ratio of InN nanowires grown on Si(111) substrates have been studied systematically, and a modified quasi-equilibrium model is proposed. The growth temperature is of great importance for both the nucleation of the nanowires and the migration of In and N atoms, thus affecting the uniformity of the InN nanowires. In order to improve the uniformity of the InN nanowires, both traditional substrate nitridation and pre-In-droplet deposition have been implemented. It is found that the substrate nitridation is favorable for the nucleation of InN nanowires. However, the initial In atoms adhered to the substrate are insufficient to sustain the uniform growth of the InN nanowires. We have found that the initial In droplet on the substrate is not only advantageous for the nucleation of the InN nanowire, but also favorable for the In atom equilibrium between the initial In droplets and the direct In flux. Therefore, InN nanowires with a uniform aspect ratio and optimal diameter can be achieved. The results reported herein provide meaningful insights to understanding the growth kinetics during the InN nanowires growth, and open up great possibilities of developing high-performance group III-nitride-based devices.

  11. Initial exploration of growth of InN by electrochemical solution growth.

    SciTech Connect

    Waldrip, Karen Elizabeth

    2010-02-01

    This report summarizes a brief and unsuccessful attempt to grow indium nitride via the electrochemical solution growth method and a modification thereof. Described in this report is a brief effort using a $50,000 LDRD award to explore the possibilities of applying the Electrochemical Solution Growth (ESG) technique to the growth of indium nitride (InN). The ability to grow bulk InN would be exciting from a scientific perspective, and a commercial incentive lies in the potential of extending the ESG technique to grow homogeneous, bulk alloys of In{sub x}Ga{sub 1-x}N for light emitting diodes (LEDs) operating in the green region of the spectrum. Indium nitride is the most difficult of the III-nitrides to grow due to its very high equilibrium vapor pressure of nitrogen1. It is several orders of magnitude higher than for gallium nitride or aluminum nitride. InN has a bandgap energy of 0.7eV, and achieving its growth in bulk for large area, high quality substrates would permit the fabrication of LEDs operating in the infrared. By alloying with GaN and AlN, the bulk material used as substrates would enable high efficiency emission wavelengths that could be tailored all the way through the deep ultraviolet. In addition, InN has been shown to have very high electronic mobilities (2700 cm{sup 2}/V s), making it a promising material for transistors and even terahertz emitters. Several attempts at synthesizing InN have been made by several groups. It was shown that metallic indium does not interact with unactivated nitrogen even at very high temperatures. Thus sets up an incompatibility between the precursors in all growth methods: a tradeoff between thermally activating the nitrogen-containing precursor and the low decomposition temperature of solid InN. We have been working to develop a novel growth technique that circumvents the difficulties of other bulk growth techniques by precipitating the column III nitrides from a solvent, such as a molten chloride salt, that

  12. MBE Growth of InN/GaN(0001) and Shape Transitions of InN islands

    NASA Astrophysics Data System (ADS)

    Cao, Yongge; Xie, Maohai; Liu, Ying; Ng, Y. F.

    2003-03-01

    Plasma-assisted molecular-beam epitaxial growth of InN on GaN(0001) is investigated. Both layer-by-layer and Stranski-Krastanov (SK) growth modes are observed under different growth windows. Strain relaxation is studied by real-time recording of the in-plane lattice spacing evolutions on RHEED pattern, which suggest a gradual relaxation of the strain in InN film commenced during the first bilayer (BL) deposition and almost completed after 2-4 BLs. For SK growth, 3D islanding initiates after the strain has mostly been relieved, presumably by dislocations. Based on statistical analysis, the shape transitions of 3D islands are firstly observed in the III-nitrides system. The InN islands transform gradually from pyramids to platelets with increasing of In flux. Under In-rich growth condition, the reverse trend of island shape evolution dependence on volume size, compared with Equilibrium Crystal Shape (ECS) theory, is induced by the Indium self-surfactant effects, in which Indium adlayer on the top surface of InN islands will depress the thermodynamic driving force for the vertical growth of 3D islands. Lateral growth of 3D islands is not only the result of kinetic process but also favored by thermodynamics while Indium self-surfactant exist.

  13. Elimination of surface band bending on N-polar InN with thin GaN capping

    SciTech Connect

    Kuzmík, J. Haščík, Š.; Kučera, M.; Kúdela, R.; Dobročka, E.; Adikimenakis, A.; Mičušík, M.; Gregor, M.; Plecenik, A.; Georgakilas, A.

    2015-11-09

    0.5–1 μm thick InN (0001) films grown by molecular-beam epitaxy with N- or In-polarity are investigated for the presence of native oxide, surface energy band bending, and effects introduced by 2 to 4 monolayers of GaN capping. Ex situ angle-resolved x-ray photo-electron spectroscopy is used to construct near-surface (GaN)/InN energy profiles, which is combined with deconvolution of In3d signal to trace the presence of InN native oxide for different types of polarity and capping. Downwards surface energy band bending was observed on bare samples with native oxide, regardless of the polarity. It was found that the In-polar InN surface is most readily oxidized, however, with only slightly less band bending if compared with the N-polar sample. On the other hand, InN surface oxidation was effectively mitigated by GaN capping. Still, as confirmed by ultra-violet photo-electron spectroscopy and by energy band diagram calculations, thin GaN cap layer may provide negative piezoelectric polarization charge at the GaN/InN hetero-interface of the N-polar sample, in addition to the passivation effect. These effects raised the band diagram up by about 0.65 eV, reaching a flat-band profile.

  14. Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

    NASA Astrophysics Data System (ADS)

    Kurşungöz, Canan; Uzcengiz Şimşek, Elif; Tuzaklı, Refik; Ortaç, Bülend

    2017-03-01

    Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension.

  15. Strain Relief Analysis of InN Quantum Dots Grown on GaN

    PubMed Central

    2007-01-01

    We present a study by transmission electron microscopy (TEM) of the strain state of individual InN quantum dots (QDs) grown on GaN substrates. Moiré fringe and high resolution TEM analyses showed that the QDs are almost fully relaxed due to the generation of a 60° misfit dislocation network at the InN/GaN interface. By applying the Geometric Phase Algorithm to plan-view high-resolution micrographs, we show that this network consists of three essentially non-interacting sets of misfit dislocations lying along the directions. Close to the edge of the QD, the dislocations curve to meet the surface and form a network of threading dislocations surrounding the system. PMID:21794190

  16. Solar hot water system installed at Quality Inn, Key West, Florida

    NASA Technical Reports Server (NTRS)

    1980-01-01

    The solar energy hot water system installed in the Quality Inn, Key West, Florida, which consists of four buildings is described. Three buildings are low-rise, two-story buildings containing 100 rooms. The fourth is a four-story building with 48 rooms. The solar system was designed to provide approximately 50 percent of the energy required for the domestic hot water system. The solar system consists of approximately 1400 square feet of flat plate collector, two 500 gallon storage tanks, a circulating pump, and a controller. Operation of the system was begun in April 1978, and has continued to date with only three minor interruptions for pump repair. In the first year of operation, it was determined that the use of the solar facility resulted in forty percent fuel savings.

  17. Solar hot water system installed at Quality Inn, Key West, Florida

    NASA Astrophysics Data System (ADS)

    1980-04-01

    The solar energy hot water system installed in the Quality Inn, Key West, Florida, which consists of four buildings is described. Three buildings are low-rise, two-story buildings containing 100 rooms. The fourth is a four-story building with 48 rooms. The solar system was designed to provide approximately 50 percent of the energy required for the domestic hot water system. The solar system consists of approximately 1400 square feet of flat plate collector, two 500 gallon storage tanks, a circulating pump, and a controller. Operation of the system was begun in April 1978, and has continued to date with only three minor interruptions for pump repair. In the first year of operation, it was determined that the use of the solar facility resulted in forty percent fuel savings.

  18. Electron Accumulation Layers in InN Nanocolumns Studied by Raman Scattering

    SciTech Connect

    Gallardo, E.; Lazic, S.; Calleja, J. M.; Agullo-Rueda, F.; Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E.

    2010-01-04

    Inelastic light scattering measurements on single crystal InN nanocolumns grown by plasma-assisted molecular beam epitaxy on both Si(001) and Si(111) substrates reveal the existence of a surface electron accumulation layer in the lateral non-polar sidewalls of the nanocolumns. Small and reversible electron density variations of this surface layer has been induced by chemical treatments of the nanocolumns, which can be accurately determined from the frequency of the LO phonon-plasmon coupled mode L{sub -}. The L{sub -} to E{sub 1}(LO) phonon intensity ratio dependence on the column diameter and the excitation wavelength is interpreted in terms of the inhomogeneous electron distribution in the nanocolumns volume and the presence of strong elastic light scattering by the nanocolumns. The TO modes fail to obey conventional selection rules, a fact that is also observed in GaN nanocolumns.

  19. Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure InN Compact Layer

    NASA Astrophysics Data System (ADS)

    Chen, Cheng-Chiang; Chen, Lung-Chien; Kuo, Shu-Jung

    2013-05-01

    This study presents a dye-sensitized solar cells (DSSCs) with a nanostructured InN compact layer (InN-CPL). The effect of a nanostructured InN-CPL in a DSSC structure prepared by radio frequency magnetron sputtering was examined. The InN-CPL effectively reduces the back reaction at the interface between the indium tin oxide (ITO) transparent conductive film and the electrolyte in the DSSC. DSSCs fabricated on ITO/InN-CPL/TiO2/D719 exhibited a short-circuit current density (JSC), open-circuit voltage (VOC), and power conversion efficiency (η) of 23.2 mA/cm2, 0.7 V, and 8.9%, respectively.

  20. Solar hot water system installed at Quality Inn, Key West, Florida. Final report

    SciTech Connect

    Not Available

    1980-04-01

    The solar energy hot water system installed in the Quality Inn, Key West, Florida, which consists of four buildings, is described. Three buildings are low-rise, two-story buildings containing 100 rooms. The fourth is a four-story building with 48 rooms. The solar system was designed to provide approximately 50% of the energy required for the domestic hot water system. The solar system consists of approximately 1400 ft/sup 2/ of flat plate collector, two 500 gal storage tanks, a circulating pump, and a controller. Operation of the system was begun in April 1978, and has continued to date with only three minor interruptions for pump repair. In the first year of operation, it was determined that the use of the solar facility resulted in 40% fuel savings.

  1. Giant Reduction of InN Surface Electron Accumulation: Compensation of Surface Donors by Mg Dopants

    NASA Astrophysics Data System (ADS)

    Linhart, W. M.; Chai, J.; Morris, R. J. H.; Dowsett, M. G.; McConville, C. F.; Durbin, S. M.; Veal, T. D.

    2012-12-01

    Extreme electron accumulation with sheet density greater than 1013cm-2 is almost universally present at the surface of indium nitride (InN). Here, x-ray photoemission spectroscopy and secondary ion mass spectrometry are used to show that the surface Fermi level decreases as the Mg concentration increases, with the sheet electron density falling to below 108cm-2. Surface space-charge calculations indicate that the lowering of the surface Fermi level increases the density of unoccupied donor-type surface states and that these are largely compensated by Mg acceptors in the near-surface hole depletion region rather than by accumulated electrons. This is a significant step towards the realization of InN-based optoelectronic devices.

  2. Tunable surface electron spin splitting with electric double-layer transistors based on InN.

    PubMed

    Yin, Chunming; Yuan, Hongtao; Wang, Xinqiang; Liu, Shitao; Zhang, Shan; Tang, Ning; Xu, Fujun; Chen, Zhuoyu; Shimotani, Hidekazu; Iwasa, Yoshihiro; Chen, Yonghai; Ge, Weikun; Shen, Bo

    2013-05-08

    Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.

  3. Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

    NASA Astrophysics Data System (ADS)

    Segura-Ruiz, J.; Garro, N.; Cantarero, A.; Denker, C.; Malindretos, J.; Rizzi, A.

    2009-03-01

    Vertically self-aligned InN nanocolumns have been investigated by means of scanning electron microscopy, Raman scattering, and photoluminescence spectroscopy. Different nanocolumn morphologies corresponding to different molecular beam epitaxy growth conditions have been studied. Raman spectra revealed strain-free nanocolumns with high crystalline quality for the full set of samples studied. Longitudinal optical modes both uncoupled and coupled to an electron plasma coexist in the Raman spectra pointing to the existence of two distinctive regions in the nanocolumn: a surface layer of degenerated electrons and a nondegenerated inner core. The characteristics of the low-temperature photoluminescence and its dependence on temperature and excitation power can be explained by a model considering localized holes recombining with degenerated electrons close to the nonpolar surface. The differences observed in the optical response of different samples showing similar crystalline quality have been attributed to the variation in the electron accumulation layer with the growth conditions.

  4. Angular-dependent Raman study of a- and s-plane InN

    NASA Astrophysics Data System (ADS)

    Filintoglou, K.; Katsikini, M.; Arvanitidis, J.; Christofilos, D.; Lotsari, A.; Dimitrakopulos, G. P.; Vouroutzis, N.; Ajagunna, A. O.; Georgakilas, A.; Zoumakis, N.; Kourouklis, G. A.; Ves, S.

    2015-02-01

    Angular-dependent polarized Raman spectroscopy was utilized to study nonpolar a-plane ( 1 1 ¯ 20 ) and semipolar s-plane ( 10 1 ¯ 1 ) InN epilayers. The intensity dependence of the Raman peaks assigned to the vibrational modes A1(TO), E1(TO), and E2 h on the angle ψ that corresponds to rotation around the growth axis, is very well reproduced by using expressions taking into account the corresponding Raman tensors and the experimental geometry, providing thus a reliable technique towards assessing the sample quality. The s- and a-plane InN epilayers grown on nitridated r-plane sapphire (Al2O3) exhibit good crystalline quality as deduced from the excellent fitting of the experimental angle-dependent peak intensities to the theoretical expressions as well as from the small width of the Raman peaks. On the contrary, in the case of the s-plane epilayer grown on non-nitridated r-plane sapphire, fitting of the angular dependence is much worse and can be modeled only by considering the presence of two structural modifications, rotated so as their c-axes are almost perpendicular to each other. Although the presence of the second variant is verified by transmission electron and atomic force microscopies, angular dependent Raman spectroscopy offers a non-destructive and quick way for its quantification. Rapid thermal annealing of this sample did not affect the angular dependence of the peak intensities. The shift of the E1(TO) and E2 h Raman peaks was used for the estimation of the strain state of the samples.

  5. Angular-dependent Raman study of a- and s-plane InN

    SciTech Connect

    Filintoglou, K.; Katsikini, M. Arvanitidis, J.; Lotsari, A.; Dimitrakopulos, G. P.; Vouroutzis, N.; Ves, S.; Christofilos, D.; Kourouklis, G. A.; Ajagunna, A. O.; Georgakilas, A.; Zoumakis, N.

    2015-02-21

    Angular-dependent polarized Raman spectroscopy was utilized to study nonpolar a-plane (11{sup ¯}20) and semipolar s-plane (101{sup ¯}1) InN epilayers. The intensity dependence of the Raman peaks assigned to the vibrational modes A{sub 1}(TO), E{sub 1}(TO), and E{sub 2}{sup h} on the angle ψ that corresponds to rotation around the growth axis, is very well reproduced by using expressions taking into account the corresponding Raman tensors and the experimental geometry, providing thus a reliable technique towards assessing the sample quality. The s- and a-plane InN epilayers grown on nitridated r-plane sapphire (Al{sub 2}O{sub 3}) exhibit good crystalline quality as deduced from the excellent fitting of the experimental angle-dependent peak intensities to the theoretical expressions as well as from the small width of the Raman peaks. On the contrary, in the case of the s-plane epilayer grown on non-nitridated r-plane sapphire, fitting of the angular dependence is much worse and can be modeled only by considering the presence of two structural modifications, rotated so as their c-axes are almost perpendicular to each other. Although the presence of the second variant is verified by transmission electron and atomic force microscopies, angular dependent Raman spectroscopy offers a non-destructive and quick way for its quantification. Rapid thermal annealing of this sample did not affect the angular dependence of the peak intensities. The shift of the E{sub 1}(TO) and E{sub 2}{sup h} Raman peaks was used for the estimation of the strain state of the samples.

  6. Influence of hydrogen input partial pressure on the polarity of InN on GaAs (1 1 1)A grown by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Murakami, Hisashi; Eriguchi, Ken-ichi; Torii, Jun-ichi; Cho, Hyun-Chol; Kumagai, Yoshinao; Koukitu, Akinori

    2008-04-01

    Influences of hydrogen input partial pressure in the carrier gas ( F=PHo/(PHo+PNo)) on the crystalline quality and polarities of InN on GaAs (1 1 1)A surfaces were investigated by metalorganic vapor phase epitaxy (MOVPE). It was found that the polarity of the InN was affected by the hydrogen gas in the system regardless of the polarity of GaAs starting substrate. The polarity of InN layer grown with the hydrogen partial pressure of Fo=0.004 was a mixture of In-polarity and N-polarity, while that grown with Fo=0 was In-polarity. Degradation of the crystalline quality of InN grown with Fo=0.004 occurred due to the polarity inversion during the growth. The reason why the polarity of InN was influenced by the hydrogen carrier gas could be explained by the preferential growth of N-polarity InN in the H 2 contained ambient and/or the limiting reaction of InN decomposition.

  7. Role of Inn1 and its interactions with Hof1 and Cyk3 in promoting cleavage furrow and septum formation in S. cerevisiae.

    PubMed

    Nishihama, Ryuichi; Schreiter, Jennifer H; Onishi, Masayuki; Vallen, Elizabeth A; Hanna, Julia; Moravcevic, Katarina; Lippincott, Margaret F; Han, Haesun; Lemmon, Mark A; Pringle, John R; Bi, Erfei

    2009-06-15

    Cytokinesis requires coordination of actomyosin ring (AMR) contraction with rearrangements of the plasma membrane and extracellular matrix. In Saccharomyces cerevisiae, new membrane, the chitin synthase Chs2 (which forms the primary septum [PS]), and the protein Inn1 are all delivered to the division site upon mitotic exit even when the AMR is absent. Inn1 is essential for PS formation but not for Chs2 localization. The Inn1 C-terminal region is necessary for localization, and distinct PXXP motifs in this region mediate functionally important interactions with SH3 domains in the cytokinesis proteins Hof1 (an F-BAR protein) and Cyk3 (whose overexpression can restore PS formation in inn1Delta cells). The Inn1 N terminus resembles C2 domains but does not appear to bind phospholipids; nonetheless, when overexpressed or fused to Hof1, it can provide Inn1 function even in the absence of the AMR. Thus, Inn1 and Cyk3 appear to cooperate in activating Chs2 for PS formation, which allows coordination of AMR contraction with ingression of the cleavage furrow.

  8. Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of “In+N” coverage and capping timing by GaN layer on effective InN thickness

    SciTech Connect

    Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Itoi, Takaomi

    2016-01-11

    The growth front in the self-organizing and self-limiting epitaxy of ∼1 monolayer (ML)-thick InN wells on/in +c-GaN matrix by molecular beam epitaxy (MBE) has been studied in detail, with special attention given to the behavior and role of the N atoms. The growth temperatures of interest are above 600 °C, far higher than the typical upper critical temperature of 500 °C in MBE. It was confirmed that 2 ML-thick InN wells can be frozen/inserted in GaN matrix at 620 °C, but it was found that N atoms at the growth front tend to selectively re-evaporate more quickly than In atoms at temperatures higher than 650 °C. As a result, the effective thickness of inserted InN wells in the GaN matrix at 660–670 °C were basically 1 ML or sub-ML, even though they were capped by a GaN barrier at the time of 2 ML “In+N” coverage. Furthermore, it was found that the N atoms located below In atoms in the dynamic atomic layer epitaxy growth front had remarkably weaker bonding to the +c-GaN surface.

  9. Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy

    SciTech Connect

    Kamimura, Jumpei; Kishino, Katsumi; Kikuchi, Akihiko

    2010-10-04

    We investigated the selective-area growth (SAG) of InN by rf-plasma-assisted molecular-beam epitaxy using molybdenum (Mo)-mask-patterned sapphire (0001) substrates, which resulted in the formation of regularly arranged N-polar InN microcrystals. Transmission electron microscopy observation confirmed that the laterally grown side areas were nearly dislocation-free, although many threading dislocations (10{sup 9}-10{sup 10} cm{sup -2}) were generated at the InN/sapphire interface and propagated into the center of the InN microcrystals along the crystal c-axis. The laterally grown InN microcrystals exhibited narrow near-IR emission spectra with a peak photon energy of 0.627 eV and a linewidth of 39 meV at room temperature.

  10. Structural properties of InN films grown on O-face ZnO(0001) by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Cho, Yong Jin; Brandt, Oliver; Kaganer, Vladimir M.; Ramsteiner, Manfred; Riechert, Henning; Korytov, Maxim; Albrecht, Martin

    2012-04-09

    We study the impact of substrate temperature and layer thickness on the morphological and structural properties of InN films directly grown on O-face ZnO(0001) substrates by plasma-assisted molecular beam epitaxy. With increasing substrate temperature, an interfacial reaction between InN and ZnO takes place that eventually results in the formation of cubic In{sub 2}O{sub 3} and voids. The properties of the InN films, however, are found to be unaffected by this reaction for substrate temperatures less than 550 deg. C. In fact, both the morphological and the structural quality of InN improve with increasing substrate temperature in the range from 350 to 500 deg. C. High quality films with low threading dislocation densities are demonstrated.

  11. Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy

    SciTech Connect

    Tangi, Malleswararao; Kuyyalil, Jithesh; Shivaprasad, S. M.

    2012-10-01

    We address the carrier concentration, strain, and bandgap issue of InN films grown on c-sapphire at different N-flux by molecular beam epitaxy using x-ray diffraction and x-ray photoelectron spectroscopy. We demonstrate that the strain in InN films arises due to point defects like nitrogen interstitials and nitrogen antisites. We report minimal biaxial strain due to relaxed growth morphology and a minimal hydrostatic strain arising due to interstitial nitrogen atoms being partially compensated by nitrogen antisites. We find that the variation in absorption edge can be attributed to defect induced carrier concentration and that nitrogen interstitials and nitrogen antisites act as donors that yield the respective absorption edge and Moss-Burstein shift. Our studies are a step towards the ability to form low carrier concentration strain-relaxed films and to determine the intrinsic band gap value for this technologically important material.

  12. Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source

    NASA Astrophysics Data System (ADS)

    Kremzow, Raimund; Pristovsek, Markus; Stellmach, Joachim; Savaş, Özgür; Kneissl, Michael

    2010-06-01

    The growth of InN on GaN/sapphire by metalorganic vapor-phase epitaxy (MOVPE) using tertiary-butylhydrazine (tBHy) was studied by varying temperature, V/III-ratio, growth time and carrier gas between nitrogen and hydrogen. The growth was characterized in-situ by spectroscopic ellipsometry and ex-situ by high resolution X-ray diffraction, atomic force microscopy and scanning electron microscopy. In contrast to ammonia, it was predicted that tBHy should allow InN growth for a much wider growth window and low V/III-ratios with growth temperatures below 600C. However, over a wide range of growth parameters only growth of metallic indium droplets was observed.

  13. Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films

    SciTech Connect

    Mohanta, Antaryami; Jang, Der-Jun Wang, Ming-Sung; Tu, L. W.

    2014-01-28

    Temperature and excitation power dependent time-integrated photoluminescence of Si doped InN thin films are investigated. Photoluminescence (PL) spectra at low temperatures are described by single emission peak ensued due to “free-to-bound” recombination; whereas PL spectra at higher temperatures above 150 K are characterized by both “band-to-band” and “free-to-bound” transition. Carrier dynamics of Si doped InN thin films is studied using pump-probe reflection spectroscopy at room temperature. The hot electron cooling process is well described by electron-electron scattering. The dependence of the hot electron cooling rate on total electron density shows sublinear to linear behavior with increase of background electron density. The variation of the carrier recombination lifetime with total electron density implicates the dominance of the defect-related nonradiative recombination channel over other recombination processes.

  14. Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study

    SciTech Connect

    Acharya, Ananta R. E-mail: anantaach@gmail.com; Thoms, Brian D.; Nepal, Neeraj; Eddy, Charles R.

    2015-03-15

    The surface bonding configuration and kinetics of hydrogen desorption from InN grown by plasma-assisted atomic layer epitaxy have been investigated. High resolution electron energy loss spectra exhibited loss peaks assigned to a Fuchs–Kliewer surface phonon, N-N and N-H surface species. The surface N-N vibrations are attributed to surface defects. The observation of N-H but no In-H surface species suggested N-terminated InN. Isothermal desorption data were best fit by the first-order desorption kinetics with an activation energy of (0.88 ± 0.06) eV and pre-exponential factor of (1.5 ± 0.5) × 10{sup 5 }s{sup −1}.

  15. R&W Club Frederick Hosts 4th Annual Golf Tournament Benefiting The Children’s Inn at NIH | Poster

    Cancer.gov

    The R&W Club Frederick’s 4th Annual Golf Tournament to benefit the Children’s Inn at NIH teed off on time despite cloudy weather and scattered showers. Employees from NCI at Frederick, the main NIH campus, and Leidos Biomed, along with family and friends, came to enjoy an afternoon at the beautiful Maryland National Golf Club in Middletown and to support a wonderful charity.

  16. R&W Club Frederick Hosts Second Annual Golf Tourney for The Children’s Inn | Poster

    Cancer.gov

    By Carolynne Keenan, Contributing Writer On Sept. 8, more than 40 NCI at Frederick and Leidos Biomedical Research employees, along with family and friends, swapped work clothes for golf gear at Maryland National Golf Club in Middletown. The golfers didn’t just play for fun; they participated in the second annual R&W Club Frederick Golf Tournament to support The Children’s Inn at NIH.

  17. Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range.

    PubMed

    Winden, A; Mikulics, M; Grützmacher, D; Hardtdegen, H

    2013-10-11

    Important technological steps are discussed and realized for future room-temperature operation of III-nitride single photon emitters. First, the growth technology of positioned single pyramidal InN nanostructures capped by Mg-doped GaN is presented. The optimization of their optical characteristics towards narrowband emission in the telecommunication wavelength range is demonstrated. In addition, a device concept and technology was developed so that the nanostructures became singularly addressable. It was found that the nanopyramids emit in the telecommunication wavelength range if their size is chosen appropriately. A p-GaN contacting layer was successfully produced as a cap to the InN pyramids and the top p-contact was achievable using an intrinsically conductive polymer PEDOT:PSS, allowing a 25% increase in light transmittance compared to standard Ni/Au contact technology. Single nanopyramids were successfully integrated into a high-frequency device layout. These decisive technology steps provide a promising route to electrically driven and room-temperature operating InN based single photon emitters in the telecommunication wavelength range.

  18. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

    NASA Astrophysics Data System (ADS)

    Monteagudo-Lerma, L.; Valdueza-Felip, S.; Núñez-Cascajero, A.; Ruiz, A.; González-Herráez, M.; Monroy, E.; Naranjo, F. B.

    2016-01-01

    We present the structural and optical properties of (0001)-oriented nanocolumnar films of InN deposited on c-sapphire substrates by radio-frequency reactive sputtering. It is observed that the column density and dimensions are highly dependent on the growth parameters of the buffer layer. We investigate four buffer layers consisting of (i) 30 nm of low-growth-rate InN, (ii) 30 nm of AlN deposited on the unbiased substrate (us), (iii) 30 nm of AlN deposited on the reverse-biased substrate (bs), and (iv) a 60-nm-thick bilayer consisting of 30-nm-thick bs-AlN deposited on top of 30-nm-thick us-AlN. Differences in the layer nucleation process due to the buffer layer induce variations of the column density in the range of (2.5-16)×109 cm-2, and of the column diameter in the range of 87-176 nm. Best results in terms of mosaicity are obtained using the bs-AlN buffer layer, which leads to a full width at half-maximum of the InN(0002) rocking curve of 1.2°. A residual compressive strain is still present in the nanocolumns. All samples exhibit room temperature photoluminescence emission at ~1.6 eV, and an apparent optical band gap at ~1.7 eV estimated from linear optical transmittance measurements.

  19. Current transport in W and WSI{sub x} ohmic contacts to InGaN and InN

    SciTech Connect

    Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.

    1997-10-01

    The temperature dependence of the specific contact resistance of W and WSi{sub 0.44} contacts on n{sup +} In{sub 0.65}Ga{sub 0.35}N and InN was measured in the range -50 {degrees}C to 125 {degrees}C. The results were compared to theoretical values for different conduction mechanisms, to further elucidate the conduction mechanism in these contact schemes for all but as-deposited metal to InN where thermionic emission appears to be the dominant mechanism. The contacts were found to produce low specific resistance ohmic contacts to InGaN at room temperature, e{sup c} {approximately} 10{sup -7} {Omega} {center_dot} cm{sup 2} for W and e{sub c} of 4x 10{sup -7} {Omega} {center_dot} cm{sup 2} for WSi{sub x}. InN metallized with W produced ohmic contacts with e{sub c} {approximately} 10{sup -7} {Omega} {center_dot} cm{sup 2} and e{sub c} {approximately} 10{sup -6} {Omega} {center_dot} cm{sup 2} for WSi{sub x} at room temperature.

  20. Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust Schottky Contacts

    NASA Astrophysics Data System (ADS)

    Harotoonian, Vache; Woodall, Jerry M.

    2016-12-01

    High-quality, single crystal wurtzite InN films were fabricated by radio-frequency magnetron reactive sputtering on GaN templates. The sputtered InN films in this study were about 100 nm thick. Atomic force microscopy analysis revealed the sputtered InN film had root-mean-square surface roughness of about 0.4 nm, which is comparable to the underlying GaN template. Coupled x-ray diffraction (XRD) measurements confirmed the (0001) preferred growth orientation and ω-rocking curve full-width-half-maximum (FWHM) = 0.85° for the symmetrical (0002) diffraction peak. The present InN film has the best crystal quality in terms of narrower FWHM of XRD rocking curve among reported sputtered InN thin films. In-plane and out-of-plane XRD measurements revealed a relaxed film. Room temperature Hall Effect measurements showed mobility of 110 cm2/V.s and electron concentration of 1-2 × 1020/cm3. The feasibility of utilizing a cost effective and productive method of sputtering to form robust Schottky contacts to GaN using InN, an immiscible and metallic-like semiconductor, was explored.

  1. Molten salt-based growth of bulk GaN and InN for substrates.

    SciTech Connect

    Waldrip, Karen Elizabeth

    2007-08-01

    An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The novel techniques described herein rely on the production of the nitride precursor (N{sup 3-}) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (February 2006-September 2006) focused on establishing that mass transport of GaN occurs in molten LiCl, the construction of a larger diameter electrochemical cell, the design, modification, and installation of a made-to-order glove box (required for handling very hygroscopic LiCl), and the feasibility of using room temperature molten salts to perform nitride chemistry experiments.

  2. An investigation into the conversion of In2O3 into InN nanowires

    NASA Astrophysics Data System (ADS)

    Papageorgiou, Polina; Zervos, Matthew; Othonos, Andreas

    2011-12-01

    Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding to the body centred cubic crystal structure of In2O3 while the photoluminescence (PL) spectrum at 300 K consisted of two broad peaks, centred around 400 and 550 nm. The post-growth nitridation of In2O3 NWs was systematically investigated by varying the nitridation temperature between 500 and 900°C, flow of NH3 and nitridation times between 1 and 6 h. The NWs are eliminated above 600°C while long nitridation times at 500 and 600°C did not result into the efficient conversion of In2O3 to InN. We find that the nitridation of In2O3 is effective by using NH3 and H2 or a two-step temperature nitridation process using just NH3 and slower ramp rates. We discuss the nitridation mechanism and its effect on the PL.

  3. Electrical transport properties of single undoped and n-type doped InN nanowires.

    PubMed

    Richter, T; Lüth, H; Schäpers, Th; Meijers, R; Jeganathan, K; Estévez Hernández, S; Calarco, R; Marso, M

    2009-10-07

    Electrical transport properties of undoped and n-type doped InN nanowires grown by molecular beam epitaxy were studied by current-voltage and back-gate field-effect transistor measurements. The current-voltage characteristics show ohmic behavior in the temperature range between 4 and 300 K. Down to about 120 K a linear decrease in resistance with temperature is observed. The investigation of a large number of nanowires revealed for undoped as well as doped wires an approximately linear relation between the normalized conductance and diameter for wires with a diameter below 100 nm. This shows that the main conduction takes place in the tubular surface accumulation layer of the wires. In contrast, for doped wires with a diameter larger than 100 nm a quadratic dependence of conduction on the diameter was found, which is attributed to bulk conductance as the main contribution. The successful doping of the wires is confirmed by an enhanced conduction and by the results of the back-gate field-effect transistor measurements.

  4. Hole transport and photoluminescence in Mg-doped InN

    SciTech Connect

    Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

    2010-03-24

    Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

  5. Molten Salt-Based Growth of Bulk GaN and InN for Substrates

    SciTech Connect

    Waldrip, Karen Elizabeth; Tsao, Jeffrey Yeenien; Kerley, Thomas M.

    2006-09-01

    An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The technique described herein relies on the production of the nitride precursor (N3-) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (July 2004-September 2005) focused on the initial measurement of the solubility of GaN in molten LiCl as a function of temperature, the construction of electrochemical cells, the modification of a commercial glove box (required for handling very hygroscopic LiCl), and on securing intellectual property for the technique.

  6. Evaluation of testing strategies for the radiation tolerant ATLAS n +-in-n pixel sensor

    NASA Astrophysics Data System (ADS)

    Klaiber-Lodewigs, Jonas M.; Atlas Pixel Collaboration

    2003-10-01

    The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m2 with 1.1×10 8 read-out channels usable for a particle fluence up to 10 15 cm-2 ( 1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n +-in-n silicon pixel cell design with a standard cell size of 50×400 μm2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operation in the ATLAS experiment. The specific set of tests discussed in detail measures sensor depletion, interface generation velocity, p-spray dose and biasing by punch-through mechanism and is designed to give insights into effects of irradiation with ionizing particles.

  7. First principles calculations of structural, electronic and optical properties of InN compound

    NASA Astrophysics Data System (ADS)

    Graine, R.; Chemam, R.; Gasmi, F. Z.; Nouri, R.; Meradji, H.; Khenata, R.

    2015-11-01

    We carried out ab initio calculations of structural, electronic and optical properties of Indium nitride (InN) compound in both zinc blende and wurtzite phases, using the full-potential linearized augmented plane wave method (FP-LAPW), within the framework of density functional theory (DFT). For the exchange and correlation potential, local density approximation (LDA) and generalized gradient approximation (GGA) were used. Moreover, the alternative form of GGA proposed by Engel and Vosko (EV-GGA) and modified Becke-Johnson schemes (mBJ) were also applied for band structure calculations. Ground state properties such as lattice parameter, bulk modulus and its pressure derivative are calculated. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show good agreement with the available data. The calculated band structure shows a direct band gap Γ → Γ. In the optical properties section, several optical quantities are investigated; in particular we have deduced the interband transitions from the imaginary part of the dielectric function.

  8. risk factor Inn (INNrisk) - transdisciplinary analysis of the 2005 flood in the province of Tyrol, Austria

    NASA Astrophysics Data System (ADS)

    Kleewein, Klaus; Pfurtscheller, Clemens; Borsdorf, Axel

    2010-05-01

    The transdisciplinary project INNrisk, in collaboration with public risk and disaster management, investigates the severe floods of 22nd and 23rd of August, 2005, and their effects within the federal province of Tyrol. The inundation and accompanying processes (e.g. debris flows, log jams, underwashing of infrastructure) caused by the river Inn and its tributaries created a dangerous situation for Tyrol. The overall economic loss of direct assets is said to amount to ca. 500 million Euros. Climate change has basically been causing a statistical increase of damaging floods within the Alpine Space in recent decades while increasing vulnerability at the same time. The expansion of settlements is one factor in the threat to large numbers of people and growing economic losses. However, the disasters of the last decade provide an opportunity for analysing the flood process in terms of natural-science and geographical aspects as well as in terms of economic and statistical ones. This should lead to a better understanding of triggers and effects in those areas where humans are active and form the basis for mitigation and adaptation strategies. The results of such analyses represent valuable information for public risk and disaster management, particularly in presenting the effects on public and private households. The INNrisk project primarily aims to assess the framework conditions in systemic-legal terms and to analyse human actions during the floods in relation to various plans and the damage potentials resulting from them. The assessed losses depend to a great extent on the actions taken during the emergency and on flood operations by the public emergency management and local fire departments, which are in charge of floods and related processes in the case of Austria. Assessment will be carried out by analysing a database of series of human actions for the duration of the emergeny and increased risk. The project also strives to arrive at a macro- and mesoeconomic

  9. Radiation hardness studies of n + -in-n planar pixel sensors for the ATLAS upgrades

    NASA Astrophysics Data System (ADS)

    Altenheiner, S.; Goessling, C.; Jentzsch, J.; Klingenberg, R.; Muenstermann, D.; Rummler, A.; Troska, G.; Wittig, T.

    2011-12-01

    The ATLAS experiment at the LHC is planning upgrades of its pixel detector to cope with the luminosity increase foreseen in the coming years within the transition from LHC to Super-LHC (SLHC/HL-LHC). Associated with the increase in instantaneous luminosity is a rise of the target integrated luminosity from 730 to about 3000 fb -1 which directly translates into significantly higher radiation damage. These upgrades consist of the installation of a 4th pixel layer, the insertable b-layer IBL, with a mean sensor radius of only 32 mm from the beam axis, before 2016/17. In addition, the complete pixel detector will be exchanged before 2020/21. Being very close to the beam, the radiation damage of the IBL sensors might be as high as 5×1015 neq cm-2 at their end-of-life. The total fluence of the innermost pixel layer after the SLHC upgrade might even reach 2×1016 neq cm-2. To investigate the radiation hardness and suitability of the current ATLAS pixel sensors for these fluences, n +-in-n silicon pixel sensors from the ATLAS Pixel production have been irradiated by reactor neutrons to the IBL design fluence and been tested with pions at the SPS and with electrons from a 90Sr source in the laboratory. The collected charge after IBL fluences was found to exceed 10 000 electrons per MIP at 1 kV of bias voltage which is in agreement with data collected with strip sensors. After SLHC fluences, still reliable operation of the devices could be observed with a collected charge of more than 5000 electrons per MIP.

  10. Direct growth of hexagonal InN films on 6H-SiC by radio-frequency metal-organic molecular-beam epitaxy

    SciTech Connect

    Chen, Wei-Chun; Kuo, Shou-Yi; Hsiao, Chien-Nan; Tsai, Din Ping

    2011-01-15

    Wurtzite InN films were prepared on a 6H-SiC substrate by a self-designed plasma-assisted metal-organic molecular-beam epitaxy system without a buffer layer. In this article, the authors investigate the structural and optical properties of InN films grown on a 6H-SiC substrate. The crystallinity and microstructure of the thin film were further characterized by x-ray diffraction (XRD), field-emission scanning-electron microscopy, and transmission-electron microscopy. Electrical and optical properties were evaluated by Hall and photoluminescence (PL) measurements. XRD results indicate that InN film grown at 500 deg. C is epitaxially grown along the c-axis orientation. The two-dimensional growth mode is clearly shown in scanning-electron microscope images. Room-temperature PL spectra show that the emission peak is located at {approx}0.83 eV due to the Burstein-Moss effect. In addition, the crystalline InN samples crack and peel away from the substrate at elevated growth temperature. This phenomenon may be attributed to lattice mismatch and grain coalescence while increasing the growth temperature. The narrow window of the growth temperature plays an important role in engineering the InN epitaxial growth.

  11. Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Kusaba, Akira; Kangawa, Yoshihiro; Kempisty, Pawel; Shiraishi, Kenji; Kakimoto, Koichi; Koukitu, Akinori

    2016-12-01

    We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and (000\\bar{1}) by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces.

  12. Direct immobilization of enzymes in GaN and InN nanocolumns: The urease case study

    NASA Astrophysics Data System (ADS)

    Sofikiti, N.; Chaniotakis, N.; Grandal, J.; Utrera, M.; Sanchez-Garcia, M. A.; Calleja, E.; Iliopoulos, E.; Georgakilas, A.

    2009-09-01

    In this work, the development of potentiometric urea biosensors through the entrapment of urease enzyme within the cavities of nanocolumnar GaN and InN wurtzite semiconductor substrates, is being described. The biosensing capabilities of these materials are compared with biosensors based on the corresponding flat surfaces, in order to check the increased sensitivity and enzyme stabilization properties expected from the nanocolumns. The obtained results proved that the electrochemically active nanocolumns serve both as highly sensitive transducer, as well as stabilizing nanoenvironment within which urease retains its catalytic activity for a prolonged period of time.

  13. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

    2016-12-01

    The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

  14. Reduction of electron accumulation at InN(0001) surfaces via saturation of surface states by potassium and oxygen as donor- or acceptor-type adsorbates

    SciTech Connect

    Eisenhardt, A.; Reiß, S.; Krischok, S. Himmerlich, M.

    2014-01-28

    The influence of selected donor- and acceptor-type adsorbates on the electronic properties of InN(0001) surfaces is investigated implementing in-situ photoelectron spectroscopy. The changes in work function, surface band alignment, and chemical bond configurations are characterized during deposition of potassium and exposure to oxygen. Although an expected opponent charge transfer characteristic is observed with potassium donating its free electron to InN, while dissociated oxygen species extract partial charge from the substrate, a reduction of the surface electron accumulation occurs in both cases. This observation can be explained by adsorbate-induced saturation of free dangling bonds at the InN resulting in the disappearance of surface states, which initially pin the Fermi level and induce downward band bending.

  15. InGaN nanowires with high InN molar fraction: growth, structural and optical properties

    NASA Astrophysics Data System (ADS)

    Zhang, Xin; Lourenço-Martins, Hugo; Meuret, Sophie; Kociak, Mathieu; Haas, Benedikt; Rouvière, Jean-Luc; Jouneau, Pierre-Henri; Bougerol, Catherine; Auzelle, T.; Jalabert, D.; Biquard, Xavier; Gayral, Bruno; Daudin, Bruno

    2016-05-01

    The structural and optical properties of axial GaN/InGaN/GaN nanowire heterostructures with high InN molar fractions grown by molecular beam epitaxy have been studied at the nanoscale by a combination of electron microscopy, extended x-ray absorption fine structure and nano-cathodoluminescence techniques. InN molar fractions up to 50% have been successfully incorporated without extended defects, as evidence of nanowire potentialities for practical device realisation in such a composition range. Taking advantage of the N-polarity of the self-nucleated GaN NWs grown by molecular beam epitaxy on Si(111), the N-polar InGaN stability temperature diagram has been experimentally determined and found to extend to a higher temperature than its metal-polar counterpart. Furthermore, annealing of GaN-capped InGaN NWs up to 800 °C has been found to result in a 20 times increase of photoluminescence intensity, which is assigned to point defect curing.

  16. InGaN nanowires with high InN molar fraction: growth, structural and optical properties.

    PubMed

    Zhang, Xin; Lourenço-Martins, Hugo; Meuret, Sophie; Kociak, Mathieu; Haas, Benedikt; Rouvière, Jean-Luc; Jouneau, Pierre-Henri; Bougerol, Catherine; Auzelle, T; Jalabert, D; Biquard, Xavier; Gayral, Bruno; Daudin, Bruno

    2016-05-13

    The structural and optical properties of axial GaN/InGaN/GaN nanowire heterostructures with high InN molar fractions grown by molecular beam epitaxy have been studied at the nanoscale by a combination of electron microscopy, extended x-ray absorption fine structure and nano-cathodoluminescence techniques. InN molar fractions up to 50% have been successfully incorporated without extended defects, as evidence of nanowire potentialities for practical device realisation in such a composition range. Taking advantage of the N-polarity of the self-nucleated GaN NWs grown by molecular beam epitaxy on Si(111), the N-polar InGaN stability temperature diagram has been experimentally determined and found to extend to a higher temperature than its metal-polar counterpart. Furthermore, annealing of GaN-capped InGaN NWs up to 800 °C has been found to result in a 20 times increase of photoluminescence intensity, which is assigned to point defect curing.

  17. Wine Valley Inn: A mineral water spa in Calistoga, California. Geothermal-energy-system conceptual design and economic feasibility

    SciTech Connect

    Not Available

    1981-10-26

    The purpose of this study is to determine the engineering and economic feasibility for utilizing geothermal energy for air conditioning and service water heating at the Wine Valley Inn, a mineral water spa in Calistoga, California. The study evaluates heating, ventilating, air conditioning and water heating systems suitable for direct heat geothermal application. Due to the excellent geothermal temperatures available at this site, the mechanics and economics of a geothermally powered chilled water cooling system are evaluated. The Wine Valley Inn has the resource potential to have one of the few totally geothermal powered air conditioning and water heating systems in the world. This total concept is completely developed. A water plan was prepared to determine the quantity of water required for fresh water well development based on the special requirements of the project. An economic evaluation of the system is included to justify the added capital investment needed to build the geothermally powered mineral spa. Energy payback calculations are presented. A thermal cascade system is proposed to direct the geothermal water through the energy system to first power the chiller, then the space heating system, domestic hot water, the two spas and finally to heat the swimming pool. The Energy Management strategy required to automatically control this cascade process using industrial quality micro-processor equipment is described. Energy Management controls are selected to keep equipment sizing at a minimum, pump only the amount of geothermal water needed and be self balancing.

  18. Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(101¯3) crystal on GaAs(110) by MOVPE

    NASA Astrophysics Data System (ADS)

    Cho, H. C.; Togashi, R.; Murakami, H.; Kumagai, Y.; Koukitu, A.

    2013-03-01

    In this report, effects of ammonia nitridation and low temperature InN buffer growth were investigated to improve the crystalline quality of InN(101¯3) grown on GaAs(110) by metalorganic vapor phase epitaxy (MOVPE). InN(101¯3) single crystal including less than 0.1% of differently oriented domains was successfully grown by inserting low temperature InN buffer layer. The full width at half maximum (FWHM) values of InN(101¯3) epitaxial layer were drastically decreased from 89 arcmin to 55 arcmin after processing ammonia nitridation of GaAs(110) substrate surface. Furthermore, the FWHM value was decreased to 38 arcmin by increasing growth time, and the mechanism of dislocation annihilation happened during epitaxial growth was discussed.

  19. The daytime boundary layer in the Inn Valley - A model evaluation study with high-quality turbulence measurements

    NASA Astrophysics Data System (ADS)

    Goger, Brigitta; Rotach, Mathias W.; Gohm, Alexander; Fuhrer, Oliver; Stiperski, Ivana

    2016-04-01

    Atmospheric processes associated with complex terrain include various phenomena on the meso- and microscale, which contribute significantly to the local weather in mountainous areas of the Earth. One of the most prominent and well-known boundary-layer phenomena in mountainous terrain is the daytime valley wind circulation, which is very pronounced on clear-sky days with weak synoptic forcing. We use several chosen "valley wind days" in the Inn Valley, Austria, as case studies for the evaluation of the performance of the NWP model COSMO on a horizontal resolution of 1.1 km with a focus on boundary-layer processes and turbulent exchange. The overall goal is to evaluate the model setup and to investigate whether the model's physics schemes (initially developed for horizontally homogeneous and flat surroundings) are suitable for truly complex terrain. We evaluate the model by using measurements from the so-called "i-Box" located in the Inn Valley. The i-Box consists of six core sites that are located at representative locations in the Inn Valley, and two remote sensing systems (wind Lidar and HATPRO passive T/RH profiler) in the city of Innsbruck. The long-term data set provides a data pool of high-resolution velocity variances, turbulence variables, radiation, soil moisture, and vertical profiles of temperature, humidity, and wind in the lower troposphere, which allows a process-oriented analysis. A special focus is laid on the daytime valley boundary layer and its interaction with the developing up-valley wind. Vertical cross-sections show that the valley wind has an asymmetric structure, hence, the i-Box stations show a high spatial variability. While the station on the valley bottom and on the south-facing slope are clearly under the strong influence of the valley wind, the two stations on the north-facing slope are rather dominated by slope flows. We find that the valley wind has a strong (indirect) influence on the development of the local turbulence kinetic

  20. Influence of In-N Clusters on Band Gap Energy of Dilute Nitride In x Ga1-x N y As1-y

    NASA Astrophysics Data System (ADS)

    Zhao, Chuan-Zhen; Guo, Heng-Fei; Chen, Li-Ying; Tang, Chun-Xiao; Lu, Ke-Qing

    2016-05-01

    The In-N clusters form in the dilute nitride InxGa1-xNyAs1-y alloys after annealing. It is found that the formation of the In-N clusters not only raises the N levels lying above the conduction band minimum (CBM) of InGaAs, but also raises the N levels below the CBM of InGaAs, leading to the variation of the impurity-host interaction. The blueshift of the band gap energy is relative to the variation of the impurity-host interaction. In order to describe the blueshift of the band gap energy due to the formation of the In-N clusters, a model is developed. It is found that the model can describe the blueshift of the band gap energy well. In addition, it is found the blueshift of the band gap energy due to the atom interdiffusion at the interface can be larger than that due to the formation of the In-N clusters. Supported by the National Natural Science Foundation of China under Grant No. 61504094, Tinjin Research Program of Application Foundation and Advanced Technology under No. 15JCYBJC16300, and Tianjin City High School Science and Technology Fund Planning Project No. 20120609

  1. Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations

    SciTech Connect

    Borges, P. D. E-mail: lscolfaro@txstate.edu; Scolfaro, L. E-mail: lscolfaro@txstate.edu

    2014-12-14

    The thermoelectric properties of indium nitride in the most stable wurtzite phase (w-InN) as a function of electron and hole concentrations and temperature were studied by solving the semiclassical Boltzmann transport equations in conjunction with ab initio electronic structure calculations, within Density Functional Theory. Based on maximally localized Wannier function basis set and the ab initio band energies, results for the Seebeck coefficient are presented and compared with available experimental data for n-type as well as p-type systems. Also, theoretical results for electric conductivity and power factor are presented. Most cases showed good agreement between the calculated properties and experimental data for w-InN unintentionally and p-type doped with magnesium. Our predictions for temperature and concentration dependences of electrical conductivity and power factor revealed a promising use of InN for intermediate and high temperature thermoelectric applications. The rigid band approach and constant scattering time approximation were utilized in the calculations.

  2. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    SciTech Connect

    Barick, B. K. E-mail: subho-dh@yahoo.co.in; Dhar, S. E-mail: subho-dh@yahoo.co.in; Rodríguez-Fernández, Carlos; Cantarero, Andres

    2015-05-15

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  3. Temperature dependence of the A1(LO) and E2 (high) phonons in hexagonal InN nanowires

    NASA Astrophysics Data System (ADS)

    Song, B.; Jian, J. K.; Wang, G.; Bao, H. Q.; Chen, X. L.

    2007-06-01

    The frequencies and dampings of the zone-center optical phonon modes of A1(LO) (longitudinal-optical) and E2 (high) in wurtzite InN nanowires have been investigated by micro-Raman scattering in the temperature range from 80 to 300 K. Our results reveal that the phonon frequencies decrease and the linewidths broaden with increasing temperature. The obtained experimental data of the frequencies and linewidths at various temperatures can be well described by an empirical model which takes into account the contribution of the thermal expansion of lattice and symmetric decay of phonons into two and three identical phonons with lower energy. The results show that decay into two phonons is the probable channel for the A1(LO) mode and three-phonon decay dominates the E2 (high) mode.

  4. Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system

    SciTech Connect

    Gherasoiu, I.; O'Steen, M.; Bird, T.; Gotthold, D.; Chandolu, A.; Song, D. Y.; Xu, S. X.; Holtz, M.; Nikishin, S. A.; Schaff, W. J.

    2008-05-15

    In this work, the authors report step-flow growth mode of InN on [0001] oriented GaN templates, using a production-style molecular beam epitaxy system, Veeco GEN200 registered , equipped with a plasma source. Using adaptive growth conditions, they have obtained a surface morphology that exhibits the step-flow features. The root mean squared roughness over an area of 5x5 {mu}m{sup 2} is 1.4 nm with monolayer height terrace steps (0.281 nm), based on atomic force microscopy. It has been found that the presence of In droplets leads to defective surface morphology. From x-ray diffraction, they estimate edge and screw dislocation densities. The former is dominant over the latter. Micro-Raman spectra reveal narrow E{sub 2}{sup 2} phonon lines consistent with excellent crystalline quality of the epitaxial layers. The Hall mobility of 1 {mu}m thick InN layers, grown in step-flow mode, is slightly higher than 1400 cm{sup 2}/V s, while for other growth conditions yielding a smooth surface with no well-defined steps, mobility as high as 1904 cm{sup 2}/V s at room temperature has been measured. The samples exhibit high intensity photoluminescence (PL) with a corresponding band edge that shifts with free carrier concentration. For the lowest carrier concentration of 5.6x10{sup 17} cm{sup -3}, they observe PL emission at {approx}0.64 eV.

  5. Effects of Ga on the growth of InN on O-face ZnO(0001) by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Cho, Yong Jin; Riechert, Henning; Brandt, Oliver; Korytov, Maxim; Albrecht, Martin

    2012-07-30

    We compare the structural properties of InN and In{sub 0.95}Ga{sub 0.05}N films grown on O-face ZnO(0001) substrates at different temperatures. The small amount of Ga results in dramatic changes in the morphology and structural properties of InN. In particular, inversion domains start to appear at higher temperatures in the In{sub 0.95}Ga{sub 0.05}N film. This process is a consequence of the chemical reaction of ZnO with Ga which can be prevented by choosing the substrate temperature to be 450{sup Degree-Sign }C or below.

  6. Real-Time Optical Monitoring and Simulations of Gas Phase Kinetics in InN Vapor Phase Epitaxy at High Pressure

    NASA Technical Reports Server (NTRS)

    Dietz, Nikolaus; Woods, Vincent; McCall, Sonya D.; Bachmann, Klaus J.

    2003-01-01

    Understanding the kinetics of nucleation and coalescence of heteroepitaxial thin films is a crucial step in controlling a chemical vapor deposition process, since it defines the perfection of the heteroepitaxial film both in terms of extended defect formation and chemical integrity of the interface. The initial nucleation process also defines the film quality during the later stages of film growth. The growth of emerging new materials heterostructures such as InN or In-rich Ga(x)In(1-x)N require deposition methods operating at higher vapor densities due to the high thermal decomposition pressure in these materials. High nitrogen pressure has been demonstrated to suppress thermal decomposition of InN, but has not been applied yet in chemical vapor deposition or etching experiments. Because of the difficulty with maintaining stochiometry at elevated temperature, current knowledge regarding thermodynamic data for InN, e.g., its melting point, temperature-dependent heat capacity, heat and entropy of formation are known with far less accuracy than for InP, InAs and InSb. Also, no information exists regarding the partial pressures of nitrogen and phosphorus along the liquidus surfaces of mixed-anion alloys of InN, of which the InN(x)P(1-x) system is the most interesting option. A miscibility gap is expected for InN(x)P(1-x) pseudobinary solidus compositions, but its extent is not established at this point by experimental studies under near equilibrium conditions. The extension of chemical vapor deposition to elevated pressure is also necessary for retaining stoichiometric single phase surface composition for materials that are characterized by large thermal decomposition pressures at optimum processing temperatures.

  7. High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

    SciTech Connect

    Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A.; Orozco Hinostroza, I. E.; Escobosa Echavarría, A.

    2014-05-12

    High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011{sup ¯}0] azimuth and a superimposed diffraction along the [112{sup ¯}0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm{sup −1} and E2(high) at 488 cm{sup −1}. Hall effect measurements showed a carrier density of 9 × 10{sup 18} cm{sup −3} and an electron Hall mobility of 340 cm{sup 2}/(V s) for a film thickness of 140 nm.

  8. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

    2005-05-01

    We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (-In2O3) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal ()-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although -In2O3 grains with wide band-gap energy were formed in In film by N2 annealing, they were not easily formed in N2-annealed InN films. Even if they were not detected in N2-annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]0.5%). Although [O]1% could be estimated by investigating In2O3 grains formed in N2-annealed InN films, [O]0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In2O3 grains formed by H2 annealing with higher reactivity with InN and O2, using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films.

  9. Validation of a simple distributed sediment delivery approach in selected sub-basins of the River Inn catchment area

    NASA Astrophysics Data System (ADS)

    Reid, Lucas; Kittlaus, Steffen; Scherer, Ulrike

    2015-04-01

    For large areas without highly detailed data the empirical Universal Soil Loss Equation (USLE) is widely used to quantify soil loss. The problem though is usually the quantification of actual sediment influx into the rivers. As the USLE provides long-term mean soil loss rates, it is often combined with spatially lumped models to estimate the sediment delivery ratio (SDR). But it gets difficult with spatially lumped approaches in large catchment areas where the geographical properties have a wide variance. In this study we developed a simple but spatially distributed approach to quantify the sediment delivery ratio by considering the characteristics of the flow paths in the catchments. The sediment delivery ratio was determined using an empirical approach considering the slope, morphology and land use properties along the flow path as an estimation of travel time of the eroded particles. The model was tested against suspended solids measurements in selected sub-basins of the River Inn catchment area in Germany and Austria, ranging from the high alpine south to the Molasse basin in the northern part.

  10. A new perspective on soil erosion: exploring a thermodynamic approach in a small area of the River Inn catchment

    NASA Astrophysics Data System (ADS)

    Reid, Lucas; Scherer, Ulrike; Zehe, Erwin

    2016-04-01

    Soil erosion modeling has always struggled with compensating for the difference in time and spatial scale between model, data and the actual processes involved. This is especially the case with non-event based long-term models based on the Universal Soil Loss Equation (USLE), yet USLE based soil erosion models are among the most common and widely used for they have rather low data requirements and can be applied to large areas. But the majority of mass from soil erosion is eroded within short periods of times during heavy rain events, often within minutes or hours. Advancements of the USLE (eg. the Modified Universal Soil Loss Equation, MUSLE) allow for a daily time step, but still apply the same empirical methods derived from the USLE. And to improve the actual quantification of sediment input into rivers soil erosion models are often combined with a Sediment Delivery Ratio (SDR) to get results within the range of measurements. This is still a viable approach for many applications, yet it leaves much to be desired in terms of understanding and reproducing the processes behind soil erosion and sediment input into rivers. That's why, instead of refining and retuning the existing methods, we explore a more comprehensive, physically consistent description on soil erosion. The idea is to describe soil erosion as a dissipative process (Kleidon et al., 2013) and test it in a small sub-basin of the River Inn catchment area in the pre-Alpine foothills. We then compare the results to sediment load measurements from the sub-basin and discuss the advantages and issues with the application of such an approach.

  11. The effect of McInnes solution on enamel and the effect of Tooth mousse on bleached enamel: An in vitro study

    PubMed Central

    Darshan, H E; Shashikiran, N D

    2008-01-01

    Aims: To evaluate the effect of McInnes bleaching agent on the micro hardness of enamel before and after bleaching and to evaluate the effect of G C Tooth Mousse on the bleached enamel surface for its microhardness. Materials and Methods: McInnes bleaching solution, Casein phosphopeptide-amorphous calcium phosphate CCP-ACP (G C Tooth mousse) artificial saliva (Dept of Oral Pathology, College of Dental Sciences, Davengere), deionized water, Vickers Micro Hardness tester (Zwick/ZHV, Germany), freshly extracted teeth, cold cure acrylic, Diamond disc (Horico - PFINGST New jersey USA, KAVO- Germany), straight handpiece (kavo peca reta) and plastic moulds (6.5 × 2 mm). The purpose of this study was to evaluate and compare microhardness of the sound enamel surface by Vickers Hardness Number before and after bleaching with McInnes solution, and to evaluate the effect of casein phosphopeptide amorphous calcium phosphate (G C Tooth Mousse) on the bleached enamel surface for its microhardness. Statistical analysis: The data obtained from the test were subjected for statistical analysis and are presented as range, mean and standard deviation. P value of 0.05 or less was considered for statistical significance. The changes in microhardness at different times of assessment were analyzed using the paired ‘t’ test Results: All the samples showed decrease in the microhardness after two cycles of bleaching, though immediately after bleaching the decrease in the microhardness was not significant (P = 0.34). However, after the second cycles, it showed a significant decrease (P<0.01) in the microhardness. After application of remineralization solution (GC Tooth mousse), the samples showed a marginal increase in the microhardness (P<0.05) after seven days and a marked increase after fourteen days (P<0.001). Conclusion: McInnes bleaching agent does decrease the microhardness of enamel by causing enamel demineralization and GC Tooth mousse used in the study causes an increase in the

  12. Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al{sub 2}O{sub 3} (0001)

    SciTech Connect

    Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S. M.

    2011-05-01

    The issue of variable bandgap values for InN films grown on c-sapphire has been addressed in this work. {alpha}-InN films have been deposited in nitrogen rich condition at different substrate temperatures on bare Al{sub 2}O{sub 3} (0001) by plasma assisted molecular beam epitaxy (PA-MBE). The results of several complementary characterization techniques show that single crystalline wurtzite InN is formed, but their orientation depends on the substrate temperature. The bandgap measured on these samples (1.78 eV) is explained by Moss-Burstein shift on these degenerately n-doped samples. Our results discount effects of crystal orientation, presence of oxygen at grain boundaries and In/N stoichiometry as factors that influence the measured band-gap values.

  13. Post-growth thermal oxidation of wurtzite InN thin films into body-center cubic In{sub 2}O{sub 3} for chemical/gas sensing applications

    SciTech Connect

    Liu, H.F.; Yakovlev, N.L.; Chi, D.Z.; Liu, W.

    2014-06-01

    Post-growth thermal oxidations of InN have been studied using high-resolution x-ray diffraction (HRXRD) and secondary ion-mass spectroscopy (SIMS). The InN thin films, having relative high crystal quality, were grown by metal–organic chemical vapor deposition (MOCVD) on c-sapphire substrates using InGaN/GaN buffer layers. HRXRD reveals that oxidation of wurtzite InN into body-center cubic In{sub 2}O{sub 3} occurred at elevated temperatures. A Si{sub 3}N{sub 4} encapsulation improves the crystal quality of In{sub 2}O{sub 3} oxidized by using conventional rapid thermal annealing (RTA) but it results in the presence of undesired metallic indium. Cycle-RTA not only improves the crystal quality but also avoids the byproduct of metallic indium. SIMS depth profile, using contaminate elements as the ‘interface markers,’ provide evidence that the oxidation of InN is dominated by oxygen inward diffusion mechanism. Together with the HRXRD results, we conclude that the crystal quality of the resultant In{sub 2}O{sub 3}/InN heterostructure is mainly controlled by the balance between the speeds of oxygen diffusion and InN thermal dissociation, which can be effectively tuned by cycle-RTA. The obtained In{sub 2}O{sub 3}/InN heterostructures can be fundamental materials for studying high speed chemical/gas sensing devices. - Graphical abstract: Oxidation of h-InN into bcc-In{sub 2}O{sub 3} has been realized at elevated temperatures. A Si{sub 3}N{sub 4} cap improves the crystal quality of In{sub 2}O{sub 3} oxidized by conventional RTA but it results in the presence of undesired metallic indium. Cycle-RTA not only improves the crystal quality but also avoids the byproduct of metallic indium. SIMS depth profiles provide evidence that the oxidation of InN is dominated by oxygen inward diffusion mechanism. The crystal quality of the resultant In{sub 2}O{sub 3}/InN heterostructure is mainly controlled by the balance between the speeds of oxygen diffusion and InN thermal

  14. Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon-plasmon coupled modes.

    PubMed

    Cuscó, R; Alarcón-Lladó, E; Ibáñez, J; Yamaguchi, T; Nanishi, Y; Artús, L

    2009-10-14

    We use a hydrodynamical approach to analyse the long-wavelength LO-phonon-plasmon coupled modes observed in a set of high-quality MBE-grown InN epilayers with electron densities varying over one order of magnitude, from ∼2 × 10(18) to ∼2 × 10(19)  cm(-3). The samples were characterized by scanning electron microscopy, x-ray diffraction and Hall measurements. The correlation observed between the E(2)(high) mode frequency, and hence residual strain, and the electron density measured in the layers indicates that the differences in background electron density may be associated with threading dislocations. Owing to the low Raman signal, only the L(-) branch of the coupled modes can be unambiguously observed. The frequency of the L(-) Raman peak is, however, sensitive enough to the free electron density to allow its determination from lineshape fits to the spectra. These were carried out using an extended hydrodynamical model. Given the small bandgap energy and large conduction band nonparabolicity of InN, suitable expressions for the optical effective mass and mean square velocity that enter the hydrodynamical model were derived. Electron density values extracted from L(-) lineshape fits agree reasonably well with Hall determinations.

  15. SpaceInn hare-and-hounds exercise: Estimation of stellar properties using space-based asteroseismic data

    NASA Astrophysics Data System (ADS)

    Reese, D. R.; Chaplin, W. J.; Davies, G. R.; Miglio, A.; Antia, H. M.; Ball, W. H.; Basu, S.; Buldgen, G.; Christensen-Dalsgaard, J.; Coelho, H. R.; Hekker, S.; Houdek, G.; Lebreton, Y.; Mazumdar, A.; Metcalfe, T. S.; Silva Aguirre, V.; Stello, D.; Verma, K.

    2016-07-01

    Context. Detailed oscillation spectra comprising individual frequencies for numerous solar-type stars and red giants are either currently available, e.g. courtesy of the CoRoT, Kepler, and K2 missions, or will become available with the upcoming NASA TESS and ESA PLATO 2.0 missions. The data can lead to a precise characterisation of these stars thereby improving our understanding of stellar evolution, exoplanetary systems, and the history of our galaxy. Aims: Our goal is to test and compare different methods for obtaining stellar properties from oscillation frequencies and spectroscopic constraints. Specifically, we would like to evaluate the accuracy of the results and reliability of the associated error bars, and to see where there is room for improvement. Methods: In the context of the SpaceInn network, we carried out a hare-and-hounds exercise in which one group, the hares, simulated observations of oscillation spectra for a set of ten artificial solar-type stars, and a number of hounds applied various methods for characterising these stars based on the data produced by the hares. Most of the hounds fell into two main groups. The first group used forward modelling (i.e. applied various search/optimisation algorithms in a stellar parameter space) whereas the second group relied on acoustic glitch signatures. Results: Results based on the forward modelling approach were accurate to 1.5% (radius), 3.9% (mass), 23% (age), 1.5% (surface gravity), and 1.8% (mean density), as based on the root mean square difference. Individual hounds reached different degrees of accuracy, some of which were substantially better than the above average values. For the two 1M⊙ stellar targets, the accuracy on the age is better than 10% thereby satisfying the requirements for the PLATO 2.0 mission. High stellar masses and atomic diffusion (which in our models does not include the effects of radiative accelerations) proved to be sources of difficulty. The average accuracies for the

  16. Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT

    SciTech Connect

    Lenka, T. R. Panda, A. K.

    2011-09-15

    A new AlGaN/GaN-based high electron mobility transistor (HEMT) is proposed and its micro-wave characteristics are discussed by introducing a nanoscale AlN or InN layer to study the potential improvement in their high frequency performance. The 2DEG transport mechanism including various sub-band calculations for both (Al,In) N-based HEMTs are also discussed in the paper. Apart from direct current characteristics of the proposed HEMT, various microwave parameters such as transconductance, unit current gain (h{sub 21} = 1) cut-off frequency (f{sub t}), high power-gain frequency (f{sub max}). Masons available/stable gain and masons unilateral gain are also discussed for both devices to understand its suitable deployment in microwave frequency range.

  17. Annual Review of BPA-Funded Projects in Natural and Artificial Propagation of Salmonids, March 27-29, 1985, Holiday Inn Airport, Portland, Oregon.

    SciTech Connect

    United States. Bonneville Power Administration.

    1985-04-01

    The Fish and Wildlife Division of Bonneville Power Administration (BPA) hosted a meeting for contractors to present the results of fiscal year 1984 research conducted to implement the Northwest Power Planning Council's Fish and Wildlife Program. The meeting focused on those projects specifically related to natural and artificial propagation of salmonids. The presentations were held at the Holiday Inn Airport in Portland, Oregon, on March 27-29, 1985. This document contains abstracts of the presentations from that meeting. Section 1 contains abstracts on artificial propagation, fish health, and downstream migration, and Section 2 contains abstracts on natural propagation and habitat improvement. The abstracts are indexed by BPA Project Number and by Fish and Wildlife Program Measure. The registered attendees at the meeting are listed alphabetically in Appendix A and by affiliation in Appendix B.

  18. Thermal stability of W, WSi{sub {ital x}}, and Ti/Al ohmic contacts to InGaN, InN, and InAlN

    SciTech Connect

    Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; MacKenzie, J.D.; Shul, R.J.; Zolper, J.C.; Lovejoy, M.L.; Baca, A.G.; Hagerott-Crawford, M.

    1996-11-01

    W, WSi{sub 0.44}, and Ti/Al contact properties were examined on {ital n}{sup +}In{sub 0.65}Ga{sub 0.35}N, InN, and In{sub 0.75}Al{sub 0.25}N. W was found to produce low specific contact resistance (d{sub {ital c}}{approximately}10{sup {minus}7} {Omega}cm{sup 2}) ohmic contacts to InGaN, with significant reaction between metal and semiconductor occurring at 900{degree}C mainly due to out diffusion of In and N. WSi{sub {ital x}} showed an as-deposited d{sub {ital c}} of 4{times}10{sup {minus}7} {Omega}cm{sup 2} but this degraded significantly with subsequent annealing at {ge}600{degree}C. Ti/Al contacts were stable to {approximately}600{degree}C (d{sub {ital c}}{approximately}4{times}10{sup {minus}7} {Omega}cm{sup 2} at {le}600{degree}C). The surfaces of these contacts remained smooth to 800{degree}C for W and WSi{sub {ital x}} and 650{degree}C for Ti/Al. InN contacted with W and Ti/Al produced ohmic contacts with d{sub {ital c}}{approximately}10{sup {minus}7} {Omega}cm{sup 2} and for WSi{sub {ital xd}}{sub {ital c}}{approximately}10{sup {minus}6} {Omega}cm{sup 2}. All remained smooth to {approximately}600{degree}C, but exhibited significant interdiffusion of In, N, W, and Ti, respectively, at higher temperatures. The contact resistances for all three metalization schemes were {ge}10{sup {minus}4} {Omega}cm{sup 2} on InAlN, and degraded with subsequent annealing. {copyright} {ital 1996 American Vacuum Society}

  19. W, WSi{sub x} and Ti/Al low resistance OHMIC contacts to InGaN, InN and InAlN

    SciTech Connect

    Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; MacKenzie, J.D.; Shul, R.J.; Zolper, J.C.; Lovejoy, M.L.; Baca, A.G.; Hagerott-Crawford, M.

    1996-06-01

    W, WSi{sub 0.44} and Ti/Al contacts were examined on n{sup +} In{sub 0.65}Ga{sub 0.35}N, InN and In{sub 0.75}Al{sub 0.25}N. W was found to produce low specific contact resistance ({rho}{sub c} {approximately} 10{sup {minus}7} {Omega} {center_dot}cm{sup 2}) ohmic contacts to InGaN, with significant reaction between metal and semiconductor at 900 {degrees}C mainly due to out diffusion of In and N. WSi{sub x} showed an as-deposited {rho}{sub c} of 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} but this degraded significantly with subsequent annealing. Ti/Al contacts were stable to {approximately} 600 {degrees}C ({rho}{sub c} {approximately} 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} at {le}600 {degrees}C). The surfaces of these contacts remain smooth to 800 {degrees}C for W and WSi{sub x} and 650 {degrees}C for Ti/Al. InN contacted with W and Ti/Al produced ohmic contacts with {rho}{sub c} {approximately} 10{sup {minus}7} {Omega} {center_dot}cm{sup 2} and for WSi{sub x} {rho}{sub c} {approximately} 10{sup {minus}6} {Omega} {center_dot}cm{sup 2}. All remained smooth to {approximately} 600 {degrees}C, but exhibited significant interdiffusion of In, N, W and Ti respectively at higher temperatures. The contact resistances for all three metalization schemes were {ge} 10{sup {minus}4} {Omega} {center_dot}cm{sup 2} on InAlN, and degrades with subsequent annealing. The Ti/Al was found to react with the InAlN above 400 {degrees}C, causing the contact resistance to increase rapidly. W and WSi{sub x} proved to be more stable with {rho}{sub c} {approximately} 10{sup {minus}2} and 10{sup {minus}3} {Omega} {center_dot}cm{sup 2} up to 650 {degrees}C and 700 {degrees}C respectively.

  20. High-pressure CVD Growth of InN and Indium-rich Group III-nitride Compound Semiconductors for Novel Mid- and Far-infrared Detectors and Emitters

    DTIC Science & Technology

    2010-02-01

    1996. B = Base Plate; C = 2nd Confinement Shell; R = Fused Silica Reactor; 1&2 = Window Connections for PRS Laser Beams; RF = Radio Frequency Coil ...2nd generation HPCVD reactor assembly. The flow channel is designed with a constant cross sectional area for the maintenance of laminar flow and the...Technology, Jan. 20, 2009. 3 “The growth and characterization of InN grown by high-pressure CVD,” Department Solar Energy, Helmholtz -Zentrum

  1. High rate dry etching of GaN, AlN and InN in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar plasmas

    SciTech Connect

    Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; Shul, R.J.; Kilcoyne, S.P.; Crawford, M.H.; Howard, A.J.; Parmeter, J.E.

    1995-05-01

    Etch rates for binary nitrides in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar are reported as a function of temperature, rf-bias, microwave power, pressure and relative gas proportions. GaN etch rates remain relatively constant from 30 to 125{degrees}C and then increase to a maximum of 2340 {angstrom}-min{sup {minus}1} at 170{degrees}C. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 {angstrom}-min{sup {minus}1} at 30{degrees}C. When CH{sub 4} is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III-V nitrides remains unchanged over the temperatures studied. The GaN and InN rates increase significantly with rf power, and the fastest rates for all three binaries are obtained at 2 mTorr. Surface morphology is smooth for GaN over a wide range of conditions, whereas InN surfaces are more sensitive to plasma parameters.

  2. Tuning the effective band gap and finding the optimal growth condition of InN thin films on GaN/sapphire substrates by plasma assisted molecular beam epitaxy technique

    NASA Astrophysics Data System (ADS)

    Ghosh, Kankat; Rathore, Jaswant Singh; Laha, Apurba

    2017-01-01

    InN thin films are grown on GaN/sapphire substrates with varying the nitrogen plasma power in plasma assisted molecular beam epitaxy (PA-MBE) system. In order to evaluate the effect of nitrogen plasma power on the different properties of the InN films, several characterization viz. x-ray diffraction, atomic force microscopy, photoluminescence measurement, infra-red spectroscopy and Hall measurement were performed. Two interesting phenomena observed from the measurements are described in this paper. Firstly, it is found from both the photoluminescence and infrared spectroscopy that only by varying the nitrogen plasma power (thus the III/V ratio), one can fine tune the optical absorption edge, i.e., the effective band gap of InN from ∼0.72 eV to ∼ 0.77 eV. Secondly, it is inferred that the film grown with stoichiometric condition (III/V ∼ 1) exhibits the best structural and electrical properties.

  3. Point defects introduced by InN alloying into InxGa1-xN probed using a monoenergetic positron beam

    NASA Astrophysics Data System (ADS)

    Uedono, A.; Tsutsui, T.; Watanabe, T.; Kimura, S.; Zhang, Y.; Lozac'h, M.; Sang, L. W.; Ishibashi, S.; Sumiya, M.

    2013-03-01

    Native defects in InxGa1-xN (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for InxGa1-xN showed that vacancy-type defects were introduced with increasing InN composition, and the major defect species was identified as complexes between a cation vacancy and a nitrogen vacancy. The concentration of the divacancy, however, was found to be suppressed by Mg doping. The momentum distribution of electrons at the InxGa1-xN/GaN interface was close to that in defect-free GaN or InxGa1-xN, which was attributed to localization of positrons at the interface due to the built-in electric field, and to suppression of positron trapping by vacancy-type defects. We have also shown that the diffusion property of positrons is sensitive to an electric field near the InxGa1-xN/GaN interface.

  4. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    SciTech Connect

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Wang, Liancheng; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2014-07-21

    In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination.

  5. Intrinsic thermal conductivities and size effect of alloys of wurtzite AlN, GaN, and InN from first-principles

    NASA Astrophysics Data System (ADS)

    Ma, Jinlong; Li, Wu; Luo, Xiaobing

    2016-03-01

    Despite the fact the alloys of wurtzite AlN, GaN, and InN are widely used in electronics, the studies on their thermal conductivities (κ) are inadequate, and the intrinsic limits are still unknown. In this work, the intrinsic κ of alloys and their films are calculated from first-principles within the virtual crystal treatment. The κ of alloys are strongly suppressed even by a small amount of alloying. For instance, with only 1% alloying of Al or In, κ of GaN decreases about 60%. At relatively high alloying, with concentration between 0.2 and 0.8, the κ of alloys are not significantly changed. At room temperature, the minimal a-axis κ are about 18, 22, and 8 W m-1 K-1, while the minimal c-axis κ are about 22, 27, and 10 W m-1 K-1 for AlxGa1-xN, InxGa1-xN, and InxAl1-xN, respectively. The size effect in films can persist up to a few tens of micrometers, and κ can be reduced by half in about 100 nm thick films.

  6. Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Imura, Masataka; Tsuda, Shunsuke; Nagata, Takahiro; Banal, Ryan G.; Yoshikawa, Hideki; Yang, AnLi; Yamashita, Yoshiyuki; Kobayashi, Keisuke; Koide, Yasuo; Yamaguchi, Tomohiro; Kaneko, Masamitsu; Uematsu, Nao; Wang, Ke; Araki, Tsutomu; Nanishi, Yasushi

    2017-03-01

    To evaluate the polarity, energy band diagram, and oxygen (O) distribution of a heavily Mg-doped InN (InN:Mg+) epilayer with a Mg concentration of 1.0 ± 0.5 × 1020 cm-3, the core-level and valence band (VB) photoelectron spectra are investigated by angle-resolved soft and hard X-ray photoelectron spectroscopies. The InN:Mg+ epilayers are grown by radio-frequency plasma-assisted molecular beam epitaxy. In this doping level, the polarity inversion from In-polar to N-polar occurs with the increase in the Mg flow rate under the same growth conditions, and the VB spectrum clearly indicates the direction of polarity of InN:Mg+, which is N-polar. The energy band diagram is considered to exhibit a two-step downward bending structure due to the coexistence of the n+ surface electron accumulation layer and heavily Mg-doped p+ layer formed in the bulk. The O concentration rapidly increases until ˜4 nm with respect to the surface, which is deduced to be one of the reasons of the formation of the anomalous two-step energy band profile.

  7. Point defects introduced by InN alloying into In{sub x}Ga{sub 1-x}N probed using a monoenergetic positron beam

    SciTech Connect

    Uedono, A.; Tsutsui, T.; Watanabe, T.; Kimura, S.; Zhang, Y.; Lozac'h, M.; Sang, L. W.; Sumiya, M.; Ishibashi, S.

    2013-03-28

    Native defects in In{sub x}Ga{sub 1-x}N (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for In{sub x}Ga{sub 1-x}N showed that vacancy-type defects were introduced with increasing InN composition, and the major defect species was identified as complexes between a cation vacancy and a nitrogen vacancy. The concentration of the divacancy, however, was found to be suppressed by Mg doping. The momentum distribution of electrons at the In{sub x}Ga{sub 1-x}N/GaN interface was close to that in defect-free GaN or In{sub x}Ga{sub 1-x}N, which was attributed to localization of positrons at the interface due to the built-in electric field, and to suppression of positron trapping by vacancy-type defects. We have also shown that the diffusion property of positrons is sensitive to an electric field near the In{sub x}Ga{sub 1-x}N/GaN interface.

  8. The effect of electrical properties for InGaN and InN by high-energy particle irradiation (notice of removal)

    NASA Astrophysics Data System (ADS)

    Dong, Shao-guang; Fan, Guang-han

    2008-03-01

    This paper (SPIE Paper 68411H) was removed from the SPIE Digital Library on 8 August 2008 upon discovery that the paper has substantially plagiarized the following two papers: R.E. Jones, S.X. Li, L. Hsu, K.M. Yu, W. Walukiewicz, Z. Liliental-Weber, J.W. Ager III, E.E. Haller, H. Lu, and W.J. Schaff, "Native-defect-controlled n-type conductivity in InN," Physica B 376-377 (2006) 436-439 and S.X. Li, K.M. Yu, J. Wu, R.E. Jones, W. Walukiewicz, J.W. Ager III, W. Shan, E.E. Haller, Hai Lu, and William J. Schaff, "Native defects in InxGa1-xN alloys," Physica B 376-377 (2006) 432-435. As stated in the SPIE Publication Ethics Guidelines, "SPIE defines plagiarism as the reuse of someone else's prior ideas, processes, results, or words without explicit attribution of the original author and source, or falsely representing someone else's work as one's own. Unauthorized use of another researcher's unpublished data or findings without permission is considered to be a form of plagiarism even if the source is attributed. SPIE considers plagiarism in any form, at any level, to be unacceptable and a serious breach of professional conduct." It is SPIE policy to remove such papers and to provide citations to original sources so that interested readers can obtain the information directly from those sources. One of the authors, Shao-guang Dong, accepts full responsibility and apologizes for this plagiarism and has absolved the second author, Guang-han Fan, of any prior knowledge of or professional misconduct in this matter. Guang-han Fan also states that he had not previously seen the paper or given permission to include his name as an author.

  9. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Imai, Daichi; Hwang, Eun-Sook

    2016-12-01

    The growth kinetics of nominally one-monolayer (˜1-ML)-thick InN wells on/in the +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the impacts of excess In atoms and/or In droplets at a high growth temperature of 650 °C. Even at a constant growth temperature of 650 °C, the thickness of the sheet-island-like InN-well layers could be controlled/varied from 1-ML to 2-ML owing to the effect of excess In atoms and/or In droplets accumulated during growth. The possible growth mechanism is discussed based on the ring-shaped bright cathodoluminescence emissions introduced along the circumference of the In droplets during growth. The effective thermal stability of N atoms below the bilayer adsorbed In atoms was increased by the presence of In droplets, resulting in the freezing of 2-ML-thick InN wells into the GaN matrix. It therefore became possible to study the difference between the emission properties of 1-ML and 2-ML-thick InN wells/GaN matrix quantum wells (QWs) having similar GaN matrix crystallinity grown at the same temperature. InN/GaN QW-samples grown under widely different In + N* supply conditions characteristically separated into two groups with distinctive emission-peak wavelengths originating from 1-ML and 2-ML-thick InN wells embedded in the GaN matrix. Reflecting the growth mechanism inherent to the D-ALEp of InN on/in the +c-GaN matrix at high temperature, either 1-ML or 2-ML-thick "binary" InN well layers tended to be frozen into the GaN matrix rather InGaN random ternary-alloys. Both the structural quality and uniformity of the 1-ML InN well sample were better than those of the 2-ML InN well sample, essentially owing to the quite thin critical thickness of around 1-ML arising from the large lattice mismatch of InN and GaN.

  10. Places in Time: The Inns and Outhouses of Rhetoric

    ERIC Educational Resources Information Center

    Mailloux, Steven

    2006-01-01

    Rhetoric is often about "good guys" and "bad guys." Even more basically, it concerns who is in and who is out, what is included and what is excluded, who is placed inside and who outside a cultural community, a political movement, a professional organization. These ins and outs concern both the commonplaces of rhetoric and the rhetoric of …

  11. [SwapINN: analytic study about prescription swaps at pharmacies].

    PubMed

    Moutinho, Ana; Alexandra, Denise; Rodrigues, Renata

    2014-01-01

    Introdução: A prescrição obrigatória por DCI foi imposta em 2012, para redução de custos do SNS e motivou discussão entre as partes envolvidas. Estudámos, numa população real, a dinâmica prescrição-dispensa de medicamentos.Objetivos: Determinar a percentagem de prescrições substituídas; avaliar os fatores associados à substituição; identificar as respetivas justificações; quantificar os diferenciais dos custos para utente e Serviço Nacional de Saúde.Material e Métodos: Estudo analítico. Amostra de conveniência constituída pelos medicamentos prescritos de uma unidade de saúde, de 19 a 23 de Dezembro de 2011. Três dias depois, os utentes foram entrevistados telefonicamente. Software: Excel® e SPSS®. Testes: Qui-quadrado e Mann-Whitney; n.s. = 0,05.Resultados: Total de 255 prescrições. A maioria foi efetuada a mulheres (62%), idade média 52 anos, 4 anos de escolaridade (33%) e para situações agudas (53%). Foram substituídas 31% das prescrições, sem relação com idade, sexo ou escolaridade, nem com o médico prescritor ou farmácia. Os medicamentos prescritos para situações crónicas foram menos substituídos (p < 0,001), assim como as prescrições de marca (p < 0,001). Os anti-infeciosos e anti-alérgicos foram os grupos com mais substituições (p = 0,009). Os utentes não se aperceberam da substituição em 72% dos casos. Nos casos de substituição, o utente pagou, em média, mais 79% que o prescrito e o Serviço Nacional de Saúde 5%.Discussão/Conclusão: Verificou-se substituição de 31% das prescrições, com mais custos para utente e Serviço Nacional de Saúde. Consideramos possível viés de seleção, informação e registo. Sendo agora obrigatória a prescrição por DCI, sugerimos a análise regular, a nível nacional, com base nas aplicações informáticas em uso, da prescrição e respetiva dispensa.

  12. Solar hot water system installed at Day's Inn Motel, Savannah, Georgia

    NASA Technical Reports Server (NTRS)

    1980-01-01

    The Solar System was designed to provide 50 percent of the total Domestic Hot Water (DHW) demand. Liquid Flat Plate Collectors (900 square feet) are used for the collector subsystem. The collector subsystem is closed loop, using 50 percent Ethylene Glycol solution antifreeze for freeze protection. The 1,000 gallon fiber glass storage tank contains two heat exchangers. One of the heat exchangers heats the storage tank with the collector solar energy. The other heat exchanger preheats the cold supply water as it passes through on the way to the Domestic Hot Water (DHW) tank heaters. Electrical energy supplements the solar energy for the DHW. The Collector Mounting System utilizes guy wires to structurally tie the collector array to the building.

  13. Solar hot water system installed at Day's Inn Motel, Dallas, Texas (Valley View)

    NASA Technical Reports Server (NTRS)

    1980-01-01

    The solar system was designed to provide 65 percent of the total domestic hot water (DHW) demand. A liquid (water) flat plate collector (1,000 square feet) system automatically drains into the 1,000 gallon steel storage tank when the solar pump is not running. Heat is transferred from the DHW tanks through a shell and tube heat exchanger. A circulating pump between the DHW tanks and heat exchanger enables solar heated water to help make up standby losses. All pumps are controlled by differential temperature controllers.

  14. The Place Where Hope Lives: The Children's Inn Comforts Kids and Their Families

    MedlinePlus

    ... wouldn't accept that scenario. To get better access to top doctors, the O'Hallorans moved to the Gainesville, Fla., area. They also started clicking away on the Internet, determined to become cystinosis experts. Their online sleuthing ...

  15. Solar hot water system installed at Day's Inn Motel, Dallas, Texas (Valley View)

    NASA Astrophysics Data System (ADS)

    1980-09-01

    The solar system was designed to provide 65 percent of the total domestic hot water (DHW) demand. A liquid (water) flat plate collector (1,000 square feet) system automatically drains into the 1,000 gallon steel storage tank when the solar pump is not running. Heat is transferred from the DHW tanks through a shell and tube heat exchanger. A circulating pump between the DHW tanks and heat exchanger enables solar heated water to help make up standby losses. All pumps are controlled by differential temperature controllers.

  16. Solar hot water system installed at Days Inn Motel, Dallas, Texas (Forrest Lane)

    NASA Astrophysics Data System (ADS)

    1980-09-01

    The solar system was designed to provide 65 percent of the total Domestic Hot Water (DHW) demand. The liquid flat plate (water) collector (1,000 square feet) system automatically drains into the 1,000 gallon steel storage tank located in the mechanical room when the pump is not running. Heat is transferred from the storage tank to DHW tanks through a tube and shell heat exchanger. A circulating pump between the DHW tanks and the heat exchanger enables solar heated water to help make DHW tank standby losses. All pumps are controlled by differential temperature.

  17. Materials Data on Nd3InN (SG:221) by Materials Project

    DOE Data Explorer

    Kristin Persson

    2016-02-11

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  18. Materials Data on Ti3InN (SG:221) by Materials Project

    DOE Data Explorer

    Kristin Persson

    2016-02-05

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  19. Materials Data on La3InN (SG:221) by Materials Project

    DOE Data Explorer

    Kristin Persson

    2016-02-11

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  20. Materials Data on Pr3InN (SG:221) by Materials Project

    DOE Data Explorer

    Kristin Persson

    2016-02-11

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  1. Materials Data on InN (SG:216) by Materials Project

    DOE Data Explorer

    Kristin Persson

    2016-02-10

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  2. Materials Data on InN (SG:225) by Materials Project

    DOE Data Explorer

    Kristin Persson

    2014-07-09

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  3. Antioxidant potential of commercially available cumin (Cuminum cyminuml inn) in Pakistan.

    PubMed

    Bukhari, S Birjees; Iqbal, Shahid; Bhanger, M I

    2009-05-01

    Owing to increased safety concerns about synthetic antioxidants, exploitation of safer antioxidants based on natural origin is the focus of research nowadays. Cumin is a common spice and is used as a routine supportive cooking agent. Extracts of cumin were prepared in methanol, ethanol, dichloromethane and hexane by employing Soxhlet extraction apparatus. Determination of the total phenolic content, chelating activity, reducing power and free radical scavenging activity were taken as parameters for the assessment of antioxidant properties. The findings of this study suggest cumin to be a potent source of antioxidants. Results from the different parameters were in agreement with one another.

  4. Investigation of oxygen defects in wurtzite InN by using density functional theory

    NASA Astrophysics Data System (ADS)

    Hattori, Y.; Chubaci, J. F. D.; Matsuoka, M.; Freitas, J. A.; da Silva, A. Ferreira

    2016-12-01

    Density Functional Theory based on ab initio calculations was employed to investigate single and complex defects of oxygen in indium nitride and their influence on the optical properties. Different oxygen contents (x=1.38%, 4.16%, 5.55% and 11.11%) were considered in our study by using PBEsol-GGA and TB-mBJ for the treatment of exchange-correlation energy and potential. It was found that oxygen is energetically favorable to exist mainly as singly charged isolated defect. The results using TB-mBJ approximation predicts a narrowing of the VBM (valence band maximum) and CBM (conduction band minimum) as oxygen content increases. Nevertheless, the larger contribution of the Moss-Burstein effect leads to an effective band-gap increase, yielding absorption edge values larger than that of the intrinsic bulk indium nitride.

  5. Electrical and optical properties of InN with periodic metallic in insertions

    SciTech Connect

    Komissarova, T. A. Shubina, T. V.; Jmerik, V. N.; Ivanov, S. V.; Ryabova, L. I.; Khokhlov, D. R.; Vasson, A.; Leymarie, J.; Araki, T.; Nanishi, Y.

    2009-03-15

    We report on a growth by molecular beam epitaxy of InN:In semiconductor/metal composite structures containing periodically inserted arrays of In clusters formed by intentional deposition of In metal films in a thickness range of 2-48 monolayers. It was found that indium insertions do not change markedly carrier mobility in the composites, that remains in the 1300-1600 cm{sup 2}/(V s) range, while carrier concentration increases with rising In amount. Spectra of thermally detected optical absorption do not exhibit a noticeable Burstein-Moss shift of a principal absorption edge with increasing the carrier concentration, but rather complicated modification of their shapes.

  6. Conference on New Processes for Braille Manufacture (Ramada Inn, Boston, Massachusetts, May 18-19, 1967).

    ERIC Educational Resources Information Center

    Massachusetts Inst. of Tech., Cambridge. Sensory Aids Evaluation and Development Center.

    Proceedings from a conference on braille production and services are summarized. Only equipment which is ready for use is considered. Specific methods of producing braille discussed include the following: use of plates from a stereograph, computer line printer, braille embossers or braille writers, continuous strip embossed tape from a teletype…

  7. Solar hot water system installed at Days Inn Motel, Jacksonville, Florida

    NASA Astrophysics Data System (ADS)

    1980-09-01

    The solar system was designed to provide 65 percent of the hot water demand. Water in the liquid flat plate collector (900 square feet) system automatically drains into the 1000 gallon lined and vented steel storage tank when the pump is not running. Heat is transferred from storage to Domestic Hot Water (DHW) tanks through a tube and shell heat exchanger. A circulating pump between the DHW tanks and heat exchanger enables solar heated water to help make up DHW standby losses. All pumps are controlled by differential temperature.

  8. Sport Psychology Training in Counseling Psychology Programs: Is There Room at the Inn?

    ERIC Educational Resources Information Center

    Petrie, Trent A.; Watkins, C. Edward, Jr.

    1994-01-01

    Surveyed 53 counseling psychology programs about sport psychology training. Found that most respondents had students who were interested in sport psychology; counseling faculty were perceived to be receptive to their colleagues and graduate students having interests and pursuing research in sport psychology; and most program directors thought best…

  9. Materials Data on Nd3InN (SG:221) by Materials Project

    SciTech Connect

    Kristin Persson

    2016-04-22

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  10. Solar hot water system installed at Days Inn Motel, Jacksonville, Florida

    NASA Technical Reports Server (NTRS)

    1980-01-01

    The solar system was designed to provide 65 percent of the hot water demand. Water in the liquid flat plate collector (900 square feet) system automatically drains into the 1000 gallon lined and vented steel storage tank when the pump is not running. Heat is transferred from storage to Domestic Hot Water (DHW) tanks through a tube and shell heat exchanger. A circulating pump between the DHW tanks and heat exchanger enables solar heated water to help make up DHW standby losses. All pumps are controlled by differential temperature.

  11. Solar hot water system installed at Days Inn Motel, Dallas, Texas (Forrest Lane)

    NASA Technical Reports Server (NTRS)

    1980-01-01

    The solar system was designed to provide 65 percent of the total Domestic Hot Water (DHW) demand. The liquid flat plate (water) collector (1,000 square feet) system automatically drains into the 1,000 gallon steel storage tank located in the mechanical room when the pump is not running. Heat is transferred from the storage tank to DHW tanks through a tube and shell heat exchanger. A circulating pump between the DHW tanks and the heat exchanger enables solar heated water to help make DHW tank standby losses. All pumps are controlled by differential temperature.

  12. Human Pulpal Reaction to the Modified McInnes Bleaching Technique,

    DTIC Science & Technology

    1983-05-01

    Bleaching,v ital bleaching, pulp reaction D LA- 2. ABSTR ACT (Cotinue aevrw L N nweoesY and Identily by block number); ; z Am.C~m,-,e... pulp . Under the conditions of this study, there were no significant pulpal reactions to the bleaching technique even when a substantial amount of the...Bleaching Technique had any adverse effects on the pulp . Under the conditions of this study, there were no significant pulpal reactions to the

  13. Project EXCEL: Holiday Inn at Fisherman's Wharf, Housekeeping Department: Improving Customer Service, Module 3.

    ERIC Educational Resources Information Center

    Career Resources Development Center, Inc., San Francisco, CA.

    Project EXCEL is a federally-funded workplace literacy program involving hotel enterprises in the San Francisco (California) Bay area. Its focus is on identification and instruction of literacy skills essential to job success for limited-English-proficient (LEP) workers. Training is intended to enable employees to understand written work orders,…

  14. High pressure structural, electronic and vibrational properties of InN and InP

    NASA Astrophysics Data System (ADS)

    Panchal, J. M.; Joshi, Mitesh; Gajjar, P. N.

    2016-03-01

    A first-principles plane wave self-consistent method with the Ultrasoftpseudopotential scheme in the framework of density functional theory is performed to study the high pressure structural, electronic and vibrational properties of InX (X = N, P) for the zinc-blende (ZnS/B3), rock-salt (NaCl/B1) and cesium-chloride (CsCl/B2) phases. We also calculate the phase transition pressures among these different phases. Conclusions based on electronic energy band structure, phonon dispersion and phonon density of states at high pressure phases along phase transition regions are outlined.

  15. Solar hot water system installed at Day's Inn Motel, Savannah, Georgia

    NASA Astrophysics Data System (ADS)

    1980-09-01

    The Solar System was designed to provide 50 percent of the total Domestic Hot Water (DHW) demand. Liquid Flat Plate Collectors (900 square feet) are used for the collector subsystem. The collector subsystem is closed loop, using 50 percent Ethylene Glycol solution antifreeze for freeze protection. The 1,000 gallon fiber glass storage tank contains two heat exchangers. One of the heat exchangers heats the storage tank with the collector solar energy. The other heat exchanger preheats the cold supply water as it passes through on the way to the Domestic Hot Water (DHW) tank heaters. Electrical energy supplements the solar energy for the DHW. The Collector Mounting System utilizes guy wires to structurally tie the collector array to the building.

  16. InN Thin Film Lattice Dynamics by Grazing Incidence Inelastic X-Ray Scattering

    NASA Astrophysics Data System (ADS)

    Serrano, J.; Bosak, A.; Krisch, M.; Manjón, F. J.; Romero, A. H.; Garro, N.; Wang, X.; Yoshikawa, A.; Kuball, M.

    2011-05-01

    Achieving comprehensive information on thin film lattice dynamics so far has eluded well established spectroscopic techniques. We demonstrate here the novel application of grazing incidence inelastic x-ray scattering combined with ab initio calculations to determine the complete elastic stiffness tensor, the acoustic and low-energy optic phonon dispersion relations of thin wurtzite indium nitride films. Indium nitride is an especially relevant example, due to the technological interest for optoelectronic and solar cell applications in combination with other group III nitrides.

  17. Making Room at the Inn: Implications of "Christian Legal Society v. Martinez" for Public College and University Housing Professionals

    ERIC Educational Resources Information Center

    Waggoner, Michael D.; Russo, Charles J.

    2014-01-01

    The supreme court's ruling in "Christian Legal Society v. Martinez", its most important case to date on student associational activities, upheld a policy at a public law school in California that required recognized student organizations (or clubs) to admit "all-comers" even if they disagreed with organizational goals and…

  18. Annual Review of BPA-Funded Anadromous Fish Projects, March 18-20, 1986, Holiday Inn Airport, Portland, Oregon.

    SciTech Connect

    United States. Bonneville Power Administration.

    1986-02-01

    This report contains descriptions of projects specifically related to anadromous salmonids. They include projects in the following categories: (1) fish and wildlife projects in western Montana; (2) fish health and physiology; (3) habitat enhancement and passage improvement - Oregon I; (4) passage improvement and natural propagation - Washington; (5) habitat enhancement and passage improvements - Oregon II; (6) future hydroelectric assessments; (7) habitat enhancement and passage improvement - Idaho; (8) downstream migration: flows and monitoring; (9) downstream migration: reservoir impacts; and (10) habitat evaluation and monitoring. (ACR)

  19. Clinical and histological evaluation of an analogue of palmitoylethanolamide, PLR 120 (comicronized Palmidrol INN) in cats with eosinophilic granuloma and eosinophilic plaque: a pilot study.

    PubMed

    Scarampella, F; Abramo, F; Noli, C

    2001-02-01

    Fifteen cats with eosinophilic granuloma or eosinophilic plaque were given PLR 120 at the dosage of 10 mg kg-1 twice daily for one month. PLR-120 down-modulates mast cell degranulation via a receptor-mediated mechanism. No other drugs were permitted and cats were kept free of parasites throughout the study. A clinical evaluation and skin biopsies were performed before and after the treatment. Clinical improvement was assessed at 15 and 30 days. Mast cell numbers were counted and their granular content was assessed by densitometric analysis on toluidine blue-stained sections before and after the treatment. Ten of 15 (67%) cats showed clinical improvement of signs and lesions. There was no significant difference between mast cell numbers in skin biopsies taken before and after the trial, whereas the number of granules was significantly increased (P < 0.009). This pilot study suggests that PLR-120 might be a useful drug for the treatment of eosinophilic granuloma and eosinophilic plaque.

  20. Growth, nitrogen vacancy reduction and solid solution formation in cubic GaN thin films and the subsequent fabrication of superlattice structures using AIN and InN

    NASA Astrophysics Data System (ADS)

    Davis, Robert F.

    1992-02-01

    An atomic layer epitaxy deposition system configured for the growth of thin films of the III-V nitrides of Al, Ga and In has been designed, constructed and commissioned. The system allows the introduction of up to 16 gases without mixing. Self-terminating growth of crystalline GaN films has been achieved on single crystal wafers of (0001) alpha(6H)-SiC. Results of analyses via Auger spectroscopy, electron microscopy and electron diffraction are described. Deposition of AlN and GaN via gas-source MBE was also continued during this period. The principal emphasis concerned the initial stages of growth of both compounds on the substrates of (00001) alpha(6H)-SiC and (0001) sapphire, as determined using X-ray photoelectron spectroscopy. An initial layer of silicon nitride formed on the surface of SiC prior to the deposition of either nitride. The deposition of GaN on sapphire followed the Stranski-Krastanov mode of nucleation and growth, while on SiC, characteristics of three-dimensional growth were evident. By contrast, AlN grew initially in a layer-by-layer mode. Deposition of GaN on vicinal (100) Beta-SiC during UV irradiation resulted in the formation of a new 4H polytype of this material. Deposition of BN via gas-source MBE on Cu(110) resulted in nanocrystalline cBN; films grown on (111) Cu resulted in h-BN (graphitic phase). Similar studies using Si(100) substrates also resulted in the occurrence of cBN. The occurrence of the cubic polytype was enhanced while that of h-BN was discouraged with the use of the UV light at 400-500 C.

  1. Proceedings of the Navy Symposium on Aeroballistics (10th) Held at the Sheraton Motor Inn Fredericksburg, Virginia on 15-16-17 July 1975. Volume 3

    DTIC Science & Technology

    1975-07-17

    160 research scientists representing 56 organizations attended this tenth symposium. Session I covered the subjects of missile stability and...NAVSEASYSCOM ACKNOWLEDGEMENTS ? Thanks to all who have o " e t’O Tenth Navy Symposium on Aeroballistics: The host organization , th( r-’. a borl...philosophy and resources of the particular organization involved. SOURCES OF AERODYNAMIC DESIGN DATA The most significant change in missile design

  2. Proceedings of the Navy Symposium on Aeroballistics (10th) Held at the Sheraton Motor Inn, Fredericksburg, Virginia, on 15-16-17 July 1975. Volume 2

    DTIC Science & Technology

    1975-07-17

    Technical Report AFATL’.TR-73-l II, Air Force Armament Laboratoiv, May. 1973. 147 10th Navy Symposium on Aeroballistics Vol. 2 t 13. Miko , R. J., and...a’ the boiling temperature (or 322 10th Navy Symposium on Aeroballistics Ii!- Vol. 2 WD2503 FLOW CONTROL VALVE PISTON VALVE TADFLOWMETER PLUG WAND FL

  3. The SpaceInn-SISMA Database: Characterization of a Large Sample of Variable and Active Stars by Means of Harps Spectra

    NASA Astrophysics Data System (ADS)

    Rainer, M.; Poretti, E.; Mistò, A.; Panzera, M. R.; Molinaro, M.; Cepparo, F.; Roth, M.; Michel, E.; Monteiro, M. J. P. F. G.

    2016-12-01

    We created a large database of physical parameters and variability indicators by fully reducing and analyzing the large number of spectra taken to complement the asteroseismic observations of the COnvection, ROtation and planetary Transits (CoRoT) satellite. 7103 spectra of 261 stars obtained with the ESO echelle spectrograph HARPS have been stored in the VO-compliant database Spectroscopic Indicators in a SeisMic Archive (SISMA), along with the CoRoT photometric data of the 72 CoRoT asteroseismic targets. The remaining stars belong to the same variable classes of the CoRoT targets and were observed to better characterize the properties of such classes. Several useful variability indicators (mean line profiles, indices of differential rotation, activity and emission lines) together with v\\sin i and radial-velocity measurements have been extracted from the spectra. The atmospheric parameters {T}{eff},{log}g, and [Fe/H] have been computed following a homogeneous procedure. As a result, we fully characterize a sample of new and known variable stars by computing several spectroscopic indicators, also providing some cases of simultaneous photometry and spectroscopy.

  4. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AIN and InN

    DTIC Science & Technology

    1992-02-01

    IK AD-A248 058 - - H Final Technical ReportI I Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the...structural and chemical analyses, there is no reason to believe that a homogeneous solid solution close to this composition had formed. Moreover

  5. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AIN and InN

    DTIC Science & Technology

    1992-12-01

    AD-A258 804 Final Technical Report Ii Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent...Technical 6/1/86-12/31/92 4. TITLE AND SUBTITLE Growth, Nitrogen Vacancy Reduction and 5. FUNDING NUMBERS Solid Solution Formation in Cubic GaN Thin...According to the structural and chemical analyses, there is no reason to believe that a homogeneous solid solution close to this composition had

  6. Proceedings from the Annual Army Environmental R&D Symposium (16th) Held 23-25 June 1992 at Fort Magruder Inn and Conference Center, Williamsburg, Virginia

    DTIC Science & Technology

    1992-06-01

    may affect the kinetics of these reac- Acetone soil extracts were passed through an tions. To investigate this effect, standard solutions of 36 Table...initial absorbance is doubled 1991 a). Reaction kinetics are fast when water is present and subtracted from the final absorbance to estimate in the...unreacted DNT (Leggett 1991) or the kinetics , this filtration is conveniently performed by Janowsky complexes, thereby reducing the concentra- reducing

  7. Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer

    SciTech Connect

    El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Ortaç, Bülend; Alevli, Mustafa; Dietz, Nikolaus; Okyay, Ali K.

    2014-06-23

    In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al{sub 2}O{sub 3} layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V{sub gate} measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4 V, the memory shows a noticeable threshold voltage (V{sub t}) shift of 2 V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5 V is achieved and the V{sub t} shift direction indicates that electrons tunnel from channel to charge storage layer.

  8. Abstracts. 1978 AFOSR Contractors Meeting on Air-Breathing Combustion Dynamics and Kinetics, Ramada Inn-Downtown Dayton, Ohio, 10 - 13 October 1978

    DTIC Science & Technology

    1978-10-13

    aircraft operations, jet fuels of the future are likely to be produced from a combination of basic synthetic crudes; ie, coal, oil, shale , tar sand, etc...a mechanical shaker . A pulse generator-function generator-power amplifier combination was used to generate a 2-cycle burst of a given frequency which...above 300 Hz). In the other configuration, the piston- shaker was used to establish first a standing wave in the reaction tube at one of its resonant

  9. Proceedings of the Navy Symposium on Aeroballistics (10th) Held at the Sheraton Motor Inn, Fredericksburg, Virginia on 15-16-17 July 1975. Volume 1

    DTIC Science & Technology

    1975-07-17

    question raised by the 1974 Nicolet tests was whether even this yaw level would be sufficient to result in a short at the launch Mach numbers, from 0.919...of trimming a missile to large angles of attack and producing high levels of maneuverability. As an example, these features are very attractive for...which neglects compressibility. Tne results of this study should yield more accurate methods of determining vortex trajectories, a question of prime

  10. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    DTIC Science & Technology

    1990-07-01

    that the BGaN film remained predominantly single crystal, but shows both a normal cubic [110] pattern and a second hexagonal pattern [0110]. By contrast...27 Transmission electron microscopy (iEM) was used (Hitachi H-800) to more closely examine the microstructural evolution of the BN/ BGaN /GaN epitaxial...area diffraction (SAD) also showed the BGaN layer to be a mixture of cubic and wurtzitic phases. This layer was heavily faulted. The latter phenomenon

  11. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and Subsequent Fabrication of Superlattice Structures Using AlN and InN

    DTIC Science & Technology

    1990-12-01

    Laboratories, Inc. 3. Structural Analysis Reflection high-energy electron diffraction performed during growth indicated that the BGaN film remained...was used (Hitachi H-800) to more closely examine the microstructural evolution of the BN/ BGaN /GaN epitaxial films. Cross-section TEM specimens were... BGaN layer to be a mixture of cubic and wurtzitic phases. This layer was heavily faulted. The latter phenomenon is to be expected given the high

  12. Multicenter Phase II Study Evaluating Two Cycles of Docetaxel, Cisplatin and Cetuximab as Induction Regimen Prior to Surgery in Chemotherapy-Naive Patients with NSCLC Stage IB-IIIA (INN06-Study)

    PubMed Central

    Hilbe, Wolfgang; Pall, Georg; Kocher, Florian; Pircher, Andreas; Zabernigg, August; Schmid, Thomas; Schumacher, Michael; Jamnig, Herbert; Fiegl, Michael; Gächter, Anne; Freund, Martin; Kendler, Dorota; Manzl, Claudia; Zelger, Bettina; Popper, Helmut; Wöll, Ewald

    2015-01-01

    Background Different strategies for neoadjuvant chemotherapy in patients with early stage NSCLC have already been evaluated. The aim of this study was to evaluate the tolerability and efficacy of a chemoimmunotherapy when limited to two cycles. Methods Between 01/2007 and 03/2010 41 patients with primarily resectable NSCLC stage IB to IIIA were included. Treatment consisted of two cycles cisplatin (40 mg/m2 d1+2) and docetaxel (75 mg/m2 d1) q3 weeks, accompanied by the administration of cetuximab (400 mg/m2 d1, then 250 mg weekly). The primary endpoint was radiological response according to RECIST. Results 40 patients were evaluable for toxicity, 39 for response. The main grade 3/4 toxicities were: neutropenia 25%, leucopenia 11%, febrile neutropenia 6%, nausea 8% and rash 8%. 20 patients achieved a partial response, 17 a stable disease, 2 were not evaluable. 37 patients (95%) underwent surgery and in three of them a complete pathological response was achieved. At a median follow-up of 44.2 months, 41% of the patients had died, median progression-free survival was 22.5 months. Conclusions Two cycles of cisplatin/ docetaxel/ cetuximab showed promising efficacy in the neoadjuvant treatment of early-stage NSCLC and rapid operation was possible in 95% of patients. Toxicities were manageable and as expected. Trial Registration EU Clinical Trials Register; Eudract-Nr: 2006-004639-31 PMID:26020783

  13. Satellite Instrument Calibration for Measuring Global Climate Change. Report of a Workshop at the University of Maryland Inn and Conference Center, College Park, MD. , November 12-14, 2002

    NASA Technical Reports Server (NTRS)

    Ohring, G.; Wielicki, B.; Spencer, R.; Emery, B.; Datla, R.

    2004-01-01

    Measuring the small changes associated with long-term global climate change from space is a daunting task. To address these problems and recommend directions for improvements in satellite instrument calibration some 75 scientists, including researchers who develop and analyze long-term data sets from satellites, experts in the field of satellite instrument calibration, and physicists working on state of the art calibration sources and standards met November 12 - 14, 2002 and discussed the issues. The workshop defined the absolute accuracies and long-term stabilities of global climate data sets that are needed to detect expected trends, translated these data set accuracies and stabilities to required satellite instrument accuracies and stabilities, and evaluated the ability of current observing systems to meet these requirements. The workshop's recommendations include a set of basic axioms or overarching principles that must guide high quality climate observations in general, and a roadmap for improving satellite instrument characterization, calibration, inter-calibration, and associated activities to meet the challenge of measuring global climate change. It is also recommended that a follow-up workshop be conducted to discuss implementation of the roadmap developed at this workshop.

  14. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    DTIC Science & Technology

    1991-06-01

    p PTIC (AD-A238 521 Semi-Annual Letter Report Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the...SUBTITLE Growth, Nitrogen Vacancy Reduction and S. FUNDING NUMBERS solid Solution Formation in Cubic GaN Thin Films and the R&T:s40000lsrqO5 Subsequent

  15. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    DTIC Science & Technology

    1991-12-01

    AD-A243 524 Annual Letter Report Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent...12/31/91II 4. TITLE AND SUBTITLE Growth, Nitrogen Vacancy Reduction and S. FUNDING NUMBERS Solid Solution Formation in Cubic GaN Thin Films and the R

  16. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    DTIC Science & Technology

    1992-06-01

    AD-A253 331 Semiannual Report Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication...Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using...34 substrates, such as using a graded AlxGal-xN solid solution as a buffer layer. E. Conclusion We have shown that in the use of our modified gas source MBE

  17. Healing Arts Therapies and Person-Centred Dementia Care Healing Arts Therapies and Person-Centred Dementia Care Anthea Innes and Hatfield Karen (editors) Jessica Kingsley 137pp £13.95 1 84310 038X 184310038X.

    PubMed

    2002-06-01

    Reading this digestible good practice guide, one is struck by the sheer enthusiasm of the contributors both on paper and in the descriptions of their 'therapies'. The authors are absolutely committed to their own specialties, and desire that we are as persuaded as they by the psychotherapeutic impact of the healing arts in dementia care. This evangelism becomes a little wearing after a while and the case studies that flesh out the meaning of what is observed feel a little too neat. The book suffers a little for its American influences and expectations. One feels that all environments are assumed to have daily access to music/drama/art therapists.

  18. The Nature of the Dimethyl-aluminum (-gallium and -indium) Methylphenylamide Dimers in Solution and the Molecular Structure of (CH3)2 InN (CH3)- (C6H5)2.

    DTIC Science & Technology

    1981-03-16

    by evaluating the effects of solvent and temperature on the cis/trans isomer ratios. All data are consistent with the hypotheses that the aluminum...investigated by IH NMR spectroscopy by evaluating the effects of solvent and temperature on the cis/trans isomer ratios. All data are consistent with...essentially independent of the nature of the nonreactive solvent . 3𔃾 Thus, [(CH 3 )2AIN(CH3)(C6Hs) 2 exists as an 83%/17% mixture of cis/trans isomers in

  19. 39. DINING ROOM, LOOKING (NORTH) BACK TOWARD ENTRANCE. BEFORE 1907, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    39. DINING ROOM, LOOKING (NORTH) BACK TOWARD ENTRANCE. BEFORE 1907, GUESTS AT THE INN ATE FAMILY-STYLE AT LONG RECTANGULAR TABLES. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  20. 1. GENERAL VIEW OF ROUTE 209 LOOKING NORTH SHOWING SLEEPING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. GENERAL VIEW OF ROUTE 209 LOOKING NORTH SHOWING SLEEPING BEAR INN, SLEEPING BEAR INN GARAGE AND DORMITORY, D.H. DAY STORE, RESTROOM, AND GARAGE - Glen Haven Historic District, Route 209, Glen Arbor, Leelanau County, MI

  1. 75 FR 39954 - Oversight of Laboratory Developed Tests; Public Meeting; Change of Meeting Location

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-13

    .... ADDRESES: The public meeting will be held at The Marriott Inn & Conference Center, University of Maryland... Marriott Inn & Conference Center, University of Maryland University College (see ADDRESSES). Directions and information on parking, accommodations, and transportation options can be found at:...

  2. 18. Dining room at southwest corner of building, view to ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. Dining room at southwest corner of building, view to west. Scale stick visible against west wall, next to woman. - Deetjen's Big Sur Inn, Big Sur Inn Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  3. 75 FR 72857 - Notice of Public Hearing and Commission Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-26

    ... Garden Inn Aberdeen, 1050 Beards Hill Road, Aberdeen, MD 21001. FOR FURTHER INFORMATION CONTACT: Richard... or presentations on the following items: (1) Presentations on Climate Change Initiatives to...

  4. 75 FR 39546 - National Cancer Institute; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-09

    ... applications. Place: Bethesda North Marriott Hotel, 5701 Marinelli Road, North Bethesda, MD 20852. Contact...: Doubletree Hotel Bethesda, (Formerly Holiday Inn Select) 8120 Wisconsin Avenue, Bethesda, MD 20814....

  5. 18. LOOKING SOUTH AT STEEPLY PITCHED, GABLED ROOF. THE UPPER ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. LOOKING SOUTH AT STEEPLY PITCHED, GABLED ROOF. THE UPPER DORMERS PROVIDE LIGHT IN THE LOBBY AND THE LOWER DORMERS OPEN INTO SOME OF THE ORIGINAL GUEST ROOMS IN THE INN. (TAKEN FROM CHERRY- PICKER) - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  6. 75 FR 65263 - Virginia Graeme Baker Pool and Spa Safety Act; Public Accommodation; Withdrawal of Proposed Rule

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-22

    ... ``public accommodations facility'' as ``an inn, hotel, motel, or other place of lodging, including but not... definition of ``public accommodations facility in the Federal Register of March 15, 2010 (75 FR 12167). The proposed interpretive rule would interpret ``public accommodations facility'' to mean: ``An inn,...

  7. 34. THE CROW'S NEST. IN THE EARLY YEARS OF THE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    34. THE CROW'S NEST. IN THE EARLY YEARS OF THE INN MUSICIANS SAT AND PLAYED FOR THE GUESTS IN THE LOBBY BELOW. THE EARTHQUAKE IN 1959 CAUSED SOME STRUCTURAL DAMAGE AND NOW THE CROW'S NEST IS NOT ACCESSIBLE TO THE PUBLIC. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  8. 17. Dining area of lobby/dining room, view to southsoutheast. Scale ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. Dining area of lobby/dining room, view to south-southeast. Scale stick visible at left against corner of pillar; 5'10" figure for additional scale reference. - Deetjen's Big Sur Inn, Big Sur Inn Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  9. 26. LOBBY, LOOKING NORTH TOWARD MAIN ENTRANCE FROM SECOND FLOOR. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    26. LOBBY, LOOKING NORTH TOWARD MAIN ENTRANCE FROM SECOND FLOOR. LOCAL LODGEPOLE PINE WHICH WAS VALUED FOR ITS INVARIABLE DIAMETER WAS USED TO CONSTRUCT THE COLUMNS AND BEAMS OF THE INN WHILE GNARLED OR DISEASED LOGS WERE SELECTED FOR THE BRACES AND BALUSTERS. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  10. 2. Historic American Buildings Survey, Copy of an eary photograph, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    2. Historic American Buildings Survey, Copy of an eary photograph, courtesy of Montgomery County Historical Society, Norristown, Pa., THE KING OF PRUSSIA INN, c.1880. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  11. 1. Historic American Buildings Survey, Copy of an eary photograph, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. Historic American Buildings Survey, Copy of an eary photograph, courtesy of Montgomery County Historical Society, Norristown, Pa., THE KING OF PRUSSIA INN, c.1860-1870. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  12. The Economic Evaluation of Alternatives (EEoA): Rethinking the Application of Cost-effectiveness Analysis, Multi-criteria Decision-making (MCDM) and the Analysis of Alternatives (AoA) in Defense Procurement

    DTIC Science & Technology

    2009-04-22

    Outsourcing Travel (2005 Vendor Sales to the Federal Government) Airlines 2005 ($mil) Market share United $846 25% Delta $718 21% American $491 14.4% Hotels ...2005 ($mil) Market share Marriot $146 7.3% Holiday Inn $141 7.0% Residence Inn $125 6.3% Cars 2005 ($mil) Market share Hertz $76 20.2% Enterprise $56 15

  13. Something of Value: How Franchise Sellers Make Training Pay

    ERIC Educational Resources Information Center

    Berger, Gladys

    1975-01-01

    Training can be the most important benefit included in the purchase of a franchise. Several of these training programs used by franchise sellers (Castro Convertibles, Roto-Rooter, H and R Block, Dunhill Personnel Systems Inc., Carvel, Holiday Inns, Sheraton Inns Inc., McDonald's) are discussed. (Author/BP)

  14. Irreversible thermochromism in copper chloride Imidazolium Nanoparticle Networks.

    PubMed

    Kronstein, Martin; Kriechbaum, Konstantin; Akbarzadeh, Johanna; Peterlik, Herwig; Neouze, Marie-Alexandra

    2013-08-14

    In this work Imidazolium Nanoparticle Networks (INNs) with chloride counter-ions were used to complex copper dichloride. This complexation reaction leads to the formation of a green material. The properties of the copper INN material were compared to: first, copper imidazolium complexes, without the presence of silica nanoparticles, which are not thermochromic; second, chloride-containing INN material. The copper INN material showed irreversible thermochromic behaviour, with a clear colour change from green to yellow at 180 °C, which is due to a configuration change of the copper complex from planar to tetragonal. This structural change was studied using DSC and in situ SAXS measurements during heat treatment. The thermochromic material is stable under air up to 250 °C. This preliminary study opens the door of optical sensors for INN materials.

  15. An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

    PubMed Central

    Alvi, Naveed ul Hassan; Gómez, Victor J.; Rodriguez, Paul E.D. Soto; Kumar, Praveen; Zaman, Saima; Willander, Magnus; Nötzel, Richard

    2013-01-01

    Low-dimensional InN/InGaN quantum dots (QDs) are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications. PMID:24132228

  16. Chemical Reactions at Surfaces. Final Progress Report

    SciTech Connect

    2003-02-21

    The Gordon Research Conference (GRC) on Chemical Reactions at Surfaces was held at Holiday Inn, Ventura, California, 2/16-21/03. Emphasis was placed on current unpublished research and discussion of the future target areas in this field.

  17. 38. DINING ROOM, THE CHIMNEY WAS SEVERELY DAMAGED BY AN ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    38. DINING ROOM, THE CHIMNEY WAS SEVERELY DAMAGED BY AN EARTHQUAKE IN 1959 AND HAD TO BE RECONSTRUCTED. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  18. Genetics Home Reference: frontometaphyseal dysplasia

    MedlinePlus

    ... ears ( ossicles ), problems in the development of the roof of the mouth (palate), and skeletal abnormalities involving ... Boute O, Fiskerstrand T, Garcia-Miñaur S, Grix A, Green A, Der Kaloustian V, Lewkonia R, McInnes B, ...

  19. 6. Historic American Buildings Survey W. N. Manning, Photographer, May ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. Historic American Buildings Survey W. N. Manning, Photographer, May 15, 1935. DOOR TREATMENT IN DINING ROOM, N. ROOM - Irwinton Inn, Ferrell's Gardens, 105 Riverside Drive, Eufaula, Barbour County, AL

  20. 28. LOBBY, LOOKING EAST FROM THE THIRD FLOOR. THE OBELISK ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    28. LOBBY, LOOKING EAST FROM THE THIRD FLOOR. THE OBELISK SHAPED FIREPLACE IS FULLY VISIBLE AT THE RIGHT. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  1. 3. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    3. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 NORTHEAST ELEVATION. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  2. 10. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    10. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 MANTEL (NOT ORIGINAL) SOUTHEAST PARLOR. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  3. 14. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 INTERIOR DETAIL, SOUTHEAST BEDROOM. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  4. 7. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 SOUTH (FRONT) ELEVATION. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  5. 4. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 SOUTHWEST ELEVATION. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  6. 7. Historic American Buildings Survey (Fed.) Stanley P. Mixon, Photographer ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. Historic American Buildings Survey (Fed.) Stanley P. Mixon, Photographer Sept 16, 1940 (G) EXTERIOR, DETAIL OF OLD TAVERN SIGN (ENGLISH SIDE) WITH PAINTED LION - Captain Arah Phelphs Inn, Colebrook, Litchfield County, CT

  7. 76 FR 39080 - Environmental Management Site-Specific Advisory Board, Idaho National Laboratory

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-05

    ... Garden Inn, 1741 Harrison Street North, Twin Falls, Idaho 83301. FOR FURTHER INFORMATION CONTACT: Robert... Learned--Seismic Risk and INL Facility Safety. Test Area North Wells Pump and Treat Status....

  8. 78 FR 75939 - Bay Delta Habitat Conservation Plan and Natural Community Conservation Plan, Sacramento, CA...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-13

    ..., and reducing future risks to the Delta from earthquakes, levee failure, and climate change. National.... Tuesday, January 28, 2014, 5 p.m. to 9 p.m., Hilton Garden Inn, 2200 Gateway Court, Fairfield, CA 94533....

  9. 9. Oblique view northwest of east elevation at northeast corner ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    9. Oblique view northwest of east elevation at northeast corner of building; previous view taken at corner visible at extreme right. - Deetjen's Big Sur Inn, Hayloft Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  10. View southwest of "New Room" taken from doorway; windows overlook ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    View southwest of "New Room" taken from doorway; windows overlook Castro Creek Canyon. Scale visible against end wall - Deetjen's Big Sur Inn, Antique Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  11. 10. GENERAL VIEW OF 'BIG RAILWAY' SHOWING CRADLE AND WINCH ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    10. GENERAL VIEW OF 'BIG RAILWAY' SHOWING CRADLE AND WINCH MANUFACTURED BY MEAD-MORRISON MANUFACTURING COMPANY, HAVING A 450 TON CAPACITY - Anderson-Christofani Shipyard, Innes Avenue & Griffith Street, San Francisco, San Francisco County, CA

  12. Hereditary amyloidosis

    MedlinePlus

    ... MA. Amyloidosis. In: Goldman L, Schafer AI, eds. Goldman's Cecil Medicine . 25th ed. Philadelphia, PA: Elsevier Saunders; 2016:chap 188. Seldin DC, Skinner M. Amyloidosis. In: Firestein GS, Budd RC, Gabriel SE, McInnes IB, O'Dell ...

  13. 75 FR 23288 - Notice of Public Meeting, Southwest Colorado Resource Advisory Council Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-03

    ... 184, Dolores, Colorado 81323; August 13, 2010, at the Holiday Inn Express at 910 E. Tomichi, Gunnison... Junction, CO; telephone 970-244-3097. SUPPLEMENTARY INFORMATION: The Southwest Colorado RAC advises...

  14. MEG source localization using invariance of noise space.

    PubMed

    Zhang, Junpeng; Raij, Tommi; Hämäläinen, Matti; Yao, Dezhong

    2013-01-01

    We propose INvariance of Noise (INN) space as a novel method for source localization of magnetoencephalography (MEG) data. The method is based on the fact that modulations of source strengths across time change the energy in signal subspace but leave the noise subspace invariant. We compare INN with classical MUSIC, RAP-MUSIC, and beamformer approaches using simulated data while varying signal-to-noise ratios as well as distance and temporal correlation between two sources. We also demonstrate the utility of INN with actual auditory evoked MEG responses in eight subjects. In all cases, INN performed well, especially when the sources were closely spaced, highly correlated, or one source was considerably stronger than the other.

  15. 78 FR 6334 - Center for Scientific Review; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-30

    ... Conference Call). Contact Person: Suzanne Ryan, Ph.D., Scientific Review Officer, Center for Scientific... Bethesda (Formerly Holiday Inn Select), 8120 Wisconsin Avenue, Bethesda, MD 20814. Contact Person: Baljit...

  16. 18. Photocopy of photograph (original print at Riverside Library, Local ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. Photocopy of photograph (original print at Riverside Library, Local History Collection), photographer and date unknown. VIEW OF MISSION INN, SEVENTH STREET ENTRANCE - California Citrus Heritage Recording Project, Riverside, Riverside County, CA

  17. 77 FR 69638 - Eunice Kennedy Shriver National Institute of Child Health & Human Development; Notice of Closed...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-20

    ...: The Holiday Inn Express, 1775 Rockville Pike, Rockville, MD 20852. Contact Person: David H. Weinberg..., 301-435-6973, David.Weinberg@nih.gov . (Catalogue of Federal Domestic Assistance Program Nos....

  18. 78 FR 26379 - National Cancer Institute; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-06

    ... Branch, Division of Extramural Activities, National Cancer Institute, NIH, 9609 Medical Center Drive....D., Scientific Review Officer, Research Programs Review Branch, Division of Extramural Activities.... Agenda: To review and evaluate grant applications. Place: Hilton Garden Inn and Homewood Suites,...

  19. Solar hot water system installed at Las Vegas, Nevada

    NASA Technical Reports Server (NTRS)

    1981-01-01

    A solar energy hot water system installed in a motor inn at Las Vegas, Nevada is described. The inn is a three story building with a flat roof for installation of the solar panels. The system consists of 1,200 square feet of liquid flat plate collectors, a 2,500 gallon insulated vertical steel storage tank, two heat exchangers, and pumps and controls. The system was designed to supply approximately 74 percent of the total hot water load.

  20. Growth and morphology of 0.80 eV photoemitting indium nitride nanowires

    SciTech Connect

    Johnson, M.C.; Lee, C.J.; Bourret-Courchesne, E.D.; Konsek, S.L.; Aloni, S.; Han, W.Q.; Zettl, A.

    2004-08-13

    InN nanowires with high efficiency photoluminescence emission at 0.80 eV are reported for the first time. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50-100nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the <0001> direction. The group-III nitrides have become an extremely important technological material over the past decade. They are commonly used in optoelectronic devices, such as high brightness light-emitting diodes (LEDs) and low wavelength laser diodes (LDs), as well as high power/high frequency electronic devices. Recently InN thin films grown by MOCVD and MBE were found to have a bandgap energy in the range of 0.7-0.9 eV, much lower than the value of {approx}1.9 eV found for InN films grown by sputtering. This large decrease in the direct bandgap transition energy and the ability to form ternary (InGaN) and quaternary (AlInGaN) alloys increases the versatility of group-III nitride optoelectronic devices, ranging from the near IR to the UV. Additionally, InN has some promising transport and electronic properties. It has the smallest effective electron mass of all the group-III nitrides which leads to high mobility and high saturation velocity10 and a large drift velocity at room temperature. As a result of these unique properties, there has been a large increase in interest in InN for potential use in optoelectronic devices, such as LDs and high efficiency solar cells, as well as high frequency/high power electronic devices.

  1. New Bedford, Review of New Bedford Remedial Action Master ...

    EPA Pesticide Factsheets

    2012-04-22

    ... 'I , ill inn ii 1 1 ih II 11 1, II ll , I II II II II II II II I, I I, II III „ II MI III III IMIIIIII II III 1 1 1 II II nil Hi" II nil, i Ii 11, 1,11 1 LI II, I I II. ... II ill inn, ill II I in , II i Ml I II 1 II nil I II ...

  2. Solar hot water system installed at Las Vegas, Nevada. Final report

    SciTech Connect

    1981-01-01

    The solar hot water system installed at LaQuinta Motor Inn Inc., at Las Vegas, Nevada is described. The Inn is a three-story building with a flat roof for installation of the solar panels. The system consists of 1200 square feet of liquid flat plate collectors, a 2500 gallon insulated vertical steel storage tank, two heat exchangers and pumps and controls. The system was designed to supply approximately 74 percent of the total hot water load.

  3. Properties of inductively coupled N2 plasma processed AlInN thin film prepared by post annealing of rf sputtered Al/InN stack

    NASA Astrophysics Data System (ADS)

    Shanmugan, S.; Mutharasu, D.

    2016-12-01

    InN is a potential material for low cost tandem solar cells and its combination with Si could make the cell conversion efficiency over 30%. Doping into InN is a promising method which alters the properties of InN thin film. In this work, InN thin film was deposited on Si substrate and the doping was achieved by stacking Al elemental layer on InN thin film followed by annealing process. The doped InN (AlInN) thin film was characterized and confirmed the formation of (002) and (103) oriented phases. The prepared AlInN thin film was plasma processed using Inductively coupled plasma (ICP) in presence of N2 gas and the surface and structural properties was modified. The N2 plasma was influenced the preferred orientation of AlInN thin film and their structural parameters such as crystallite size, strain and dislocation density noticeably. Very smooth surface (<4 nm) with small particle size (97 nm) of AlInN thin film was achieved for 15 sccm flow rate during the plasma process. Very low value in leakage current was confirmed for AlInN thin film processed at 15 sccm N2 flow by current-voltage (IV) characteristics.

  4. Plasma-assisted molecular beam epitaxy growth and properties of indium-face indium nitride

    NASA Astrophysics Data System (ADS)

    Gallinat, Chad Stephen

    In this work, the PAMBE growth of high-quality InN films was developed. Using the in situ growth analysis tools, RHEED and line-of-site quadrupole mass spectrometry (QMS), the thermal decomposition of both Inand N-face InN was explored to determine attainable growth temperatures and growth rate limitations. Surface structure growth diagrams were constructed for both In- and N-face InN. In-face InN was shown to have only two growth regimes below 500ºC--the In-droplet regime and the N-rich regime. Attempts to grow beyond 500ºC resulted in In-droplet accumulation with no InN growth. Both In- and N-face InN exhibited the smoothest surface morphologies and lowest dislocation densities for films grown with excess In. The dependence of electrical transport properties on growth conditions were studied for In-face InN. An accumulation of electrons with a density of 5.1 x 1013 cm-2 was measured at the sample surface due to occupied surface states above the bulk conduction band minimum. This surface accumulation layer interfered with direct Hall measurements of bulk carriers, but a two-layer Hall model was used to extract bulk electron concentrations and mobilities. Even when accounting for this surface accumulation layer, all of the InN films exhibited a degenerate level of unintentionally doped (UID) n-type bulk conductivity. Films grown at the highest substrate temperatures with excess In had the lowest electron concentration and highest electron mobility. The UID electron concentration was shown to originate from impurity incorporation. A correlation between electron concentration and dislocation density was not observed, but dislocations were shown to limit the electron mobility in the InN films. The control of n-type conductivity in InN was demonstrated using a combination of Si-doping, variable growth temperature, and Mg-doping. The electron concentrations were controlled over a range of three orders of magnitude, with Mg-doped films demonstrating bulk electron

  5. Strategies to indium nitride and gallium nitride nanoparticles: Low-temperature, solution-phase and precursor routes

    NASA Astrophysics Data System (ADS)

    Dingman, Sean Douglas

    I present new strategies to low-temperature solution-phase synthesis of indium and gallium nitride (InN and GaN) ceramic materials. The strategies include: direct conversion of precursor molecules to InN by pyrolysis, solution-phase synthesis of nanostructured InN fibers via molecular precursors and co-reactants, and synthesis of powders through reactions derived from molten-salt chemistry. Indium nitride powders are prepared by pyrolysis of the precursors R 2InN3 (R = t-Bu (1), i-Amyl(2), Et(3), i-Pr( 4)). The precursors are synthesized via azide-alkoxide exchange of R2InOMe with Me3SiN3. The precursors are coordination polymers containing five-coordinate indium centers. Pyrolysis of 1 and 2 under N2 at 400°C yields powders consisting primarily of InN with average crystal sizes of 15--35 nm. 1 yields nanocrystalline InN with average particle sizes of 7 nm at 250°C. 3 and 4 yield primarily In metal from pyrolysis. Refluxing 1 in diisopropylbenzene (203°C) in the presence of primary amines yields InN nanofibers 10--100 nm in length. InN nanofibers of up to 1 mum can be synthesized by treating 1 with 1,1-dimethylhydrazine (DMHy) The DMHy appears to control the fiber length by acting as a secondary source of active nitrogen in order to sustain fiber growth. The resulting fibers are attached to droplets of indium metal implying a solution-liquid-solid growth mechanism. Precursor 4 yields crystalline InN whiskers when reacted with DMHy. Reactions of 4 with reducing agents such as HSnBu3, yield InN nanoparticles with an average crystallite size of 16 nm. Gallium precursors R2GaN3 (R = t-Bu( 5), Me3SiCH2(6) and i-Pr( 7)), synthesized by azide-alkoxide exchange, are found to be inert toward solution decomposition and do not yield GaN. These compounds are molecular dimers and trimers unlike the indium analogs. Compound 6 displays a monomer-dimer equilibrium in benzene solution, but exists as a solid-state trimer. InN powders are also synthesized by reactions of InCl3 and

  6. Crystallographic analysis of human hemoglobin elucidates the structural basis of the potent and dual antisickling activity of pyridyl derivatives of vanillin

    SciTech Connect

    Abdulmalik, Osheiza; Ghatge, Mohini S.; Musayev, Faik N.; Parikh, Apurvasena; Chen, Qiukan; Yang, Jisheng; Nnamani, Ijeoma; Danso-Danquah, Richmond; Eseonu, Dorothy N.; Asakura, Toshio; Abraham, Donald J.; Venitz, Jurgen; Safo, Martin K.

    2011-11-01

    Pyridyl derivatives of vanillin increase the fraction of the more soluble oxygenated sickle hemoglobin and/or directly increase the solubility of deoxygenated sickle hemoglobin. Crystallographic analysis reveals the structural basis of the potent and dual antisickling activity of these derivatives. Vanillin has previously been studied clinically as an antisickling agent to treat sickle-cell disease. In vitro investigations with pyridyl derivatives of vanillin, including INN-312 and INN-298, showed as much as a 90-fold increase in antisickling activity compared with vanillin. The compounds preferentially bind to and modify sickle hemoglobin (Hb S) to increase the affinity of Hb for oxygen. INN-312 also led to a considerable increase in the solubility of deoxygenated Hb S under completely deoxygenated conditions. Crystallographic studies of normal human Hb with INN-312 and INN-298 showed that the compounds form Schiff-base adducts with the N-terminus of the α-subunits to constrain the liganded (or relaxed-state) Hb conformation relative to the unliganded (or tense-state) Hb conformation. Interestingly, while INN-298 binds and directs its meta-positioned pyridine-methoxy moiety (relative to the aldehyde moiety) further down the central water cavity of the protein, that of INN-312, which is ortho to the aldehyde, extends towards the surface of the protein. These studies suggest that these compounds may act to prevent sickling of SS cells by increasing the fraction of the soluble high-affinity Hb S and/or by stereospecific inhibition of deoxygenated Hb S polymerization.

  7. The Discovery of the Nearest Star

    NASA Astrophysics Data System (ADS)

    Glass, I. S.

    2007-07-01

    Proxima Centauri, the closest star to us after the Sun, is part of a triple system whose other two members constitute the double ? Centauri. In the 1830s, the latter was the subject of the first successful stellar parallax measure ments made in Cape Town by Thomas Henderson. Proxima was found in 1915, at the Union Observatory in Johannesburg by R T A Innes, as a faint star with a high proper motion similar to that of ? Cen. Its parallax was measured independently over the following two years by J G E G Vote at the Cape and by Innes himself, unknown to each other. Innes, on the basis of his rather rough result, declared it to be closer than ? and named it 'Proxima Centauri', but the truth of its proximity was only established rigorously in 1928 by H A Alden, based on observations at the Yale Southern Station in Johannesburg.

  8. Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study

    SciTech Connect

    Lorenz, K.; Barradas, N. P.; Alves, E.; Miranda, S. M. C.; Nanishi, Y.; Schaff, W. J.; Tu, L. W.; Darakchieva, V.

    2011-06-01

    The doping mechanisms of InN, a promising material for novel optoelectronic and electronic devices, are still not well understood. Unintentional hydrogen doping is one possibility that could explain the unintentional n-type conductivity in high-quality nominally undoped InN films. We measured a series of state-of-the-art InN samples grown by molecular beam epitaxy with 2 MeV 4He-ERDA and RBS, showing the presence of relatively high amounts of hydrogen not only at the surface, but also in a deeper layer. Strong depletion of hydrogen due to the analysing beam was observed and taken into account in the analysis. Here, we report on the details of the analysis and show how the results correlate with the free-electron concentrations of the samples.

  9. Self-annihilation of inversion domains by high energy defects in III-Nitrides

    SciTech Connect

    Koukoula, T.; Kioseoglou, J. Kehagias, Th.; Komninou, Ph.; Ajagunna, A. O.; Georgakilas, A.

    2014-04-07

    Low-defect density InN films were grown on Si(111) by molecular beam epitaxy over an ∼1 μm thick GaN/AlN buffer/nucleation layer. Electron microscopy observations revealed the presence of inverse polarity domains propagating across the GaN layer and terminating at the sharp GaN/InN (0001{sup ¯}) interface, whereas no inversion domains were detected in InN. The systematic annihilation of GaN inversion domains at the GaN/InN interface is explained in terms of indium incorporation on the Ga-terminated inversion domains forming a metal bonded In-Ga bilayer, a structural instability known as the basal inversion domain boundary, during the initial stages of InN growth on GaN.

  10. Carrier localization in InN/InGaN multiple-quantum wells with high In-content

    NASA Astrophysics Data System (ADS)

    Valdueza-Felip, S.; Rigutti, L.; Naranjo, F. B.; Ruterana, P.; Mangeney, J.; Julien, F. H.; González-Herráez, M.; Monroy, E.

    2012-08-01

    We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 μm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of ˜12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN.

  11. Advanced Computational Modeling of Vapor Deposition in a High-pressure Reactor

    NASA Technical Reports Server (NTRS)

    Cardelino, Beatriz H.; Moore, Craig E.; McCall, Sonya D.; Cardelino, Carlos A.; Dietz, Nikolaus; Bachmann, Klaus

    2004-01-01

    In search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.

  12. Advanced Computational Modeling of Vapor Deposition in a High-Pressure Reactor

    NASA Technical Reports Server (NTRS)

    Cardelino, Beatriz H.; Moore, Craig E.; McCall, Sonya D.; Cardelino, Carlos A.; Dietz, Nikolaus; Bachmann, Klaus

    2004-01-01

    In search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.

  13. Effect of polarity on Ni/InN interfacial reactions

    SciTech Connect

    Kragh-Buetow, K. C.; Weng, X.; Readinger, E. D.; Wraback, M.; Mohney, S. E.

    2013-01-14

    Ni films on (0001) and (0001) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni{sub 3}InN{sub x} ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.

  14. Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPA-MOCVD

    NASA Astrophysics Data System (ADS)

    Indika, S. M. K.; Seidlitz, Daniel; Fali, Alireza; Cross, Brendan; Abate, Yohannes; Dietz, Nikolaus

    2016-09-01

    This contribution presents results on the structural and optoelectronic properties of InN layers grown on AlN/sapphire (0001) templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical Vapor Deposition (MEPAMOCVD). The AlN nucleation layer (NL) was varied to assess the physical properties of the InN layers. For ex-situ analysis of the deposited structures, Raman spectroscopy, Atomic Force Microscopy (AFM), and Fourier Transform Infrared (FTIR) reflectance spectroscopy have been utilized. The structural and optoelectronic properties are assessed by Raman-E2 high FWHM values, surface roughness, free carrier concentrations, mobility of the free carriers, and high frequency dielectric function. This study focus on optimizing the AlN nucleation layer (e.g. temporal precursor exposure, nitrogen plasma exposure, plasma power and AlN buffer growth temperature) and its effect on the InN layer properties.

  15. Patient Safety in Medication Nomenclature: Orthographic and Semantic Properties of International Nonproprietary Names

    PubMed Central

    Bryan, Rachel; Aronson, Jeffrey K.; ten Hacken, Pius; Williams, Alison; Jordan, Sue

    2015-01-01

    Background Confusion between look-alike and sound-alike (LASA) medication names (such as mercaptamine and mercaptopurine) accounts for up to one in four medication errors, threatening patient safety. Error reduction strategies include computerized physician order entry interventions, and ‘Tall Man’ lettering. The purpose of this study is to explore the medication name designation process, to elucidate properties that may prime the risk of confusion. Methods and Findings We analysed the formal and semantic properties of 7,987 International Non-proprietary Names (INNs), in relation to naming guidelines of the World Health Organization (WHO) INN programme, and have identified potential for errors. We explored: their linguistic properties, the underlying taxonomy of stems to indicate pharmacological interrelationships, and similarities between INNs. We used Microsoft Excel for analysis, including calculation of Levenshtein edit distance (LED). Compliance with WHO naming guidelines was inconsistent. Since the 1970s there has been a trend towards compliance in formal properties, such as word length, but longer names published in the 1950s and 1960s are still in use. The stems used to show pharmacological interrelationships are not spelled consistently and the guidelines do not impose an unequivocal order on them, making the meanings of INNs difficult to understand. Pairs of INNs sharing a stem (appropriately or not) often have high levels of similarity (<5 LED), and thus have greater potential for confusion. Conclusions We have revealed a tension between WHO guidelines stipulating use of stems to denote meaning, and the aim of reducing similarities in nomenclature. To mitigate this tension and reduce the risk of confusion, the stem system should be made clear and well ordered, so as to avoid compounding the risk of confusion at the clinical level. The interplay between the different WHO INN naming principles should be further examined, to better understand their

  16. Solar domestic hot water system installed at Texas City, Texas

    NASA Technical Reports Server (NTRS)

    1980-01-01

    This is the final technical report of the solar energy system located at LaQuinta Motor Inn, Texas City, Texas. The system was designed to supply 63 percent of the total hot water load for a new 98 unit motor inn. The solar energy system consists of a 2100 square feet Raypack liquid flat plate collector subsystem and a 2500 gallon storage subsystem circulating hot water producing 3.67 x 10 to the 8th power Btu/year. Abstracts from the site files, specification references, drawings, installation, operation, and maintenance instructions are included.

  17. A Workshop on High-Level Connectionist Models

    DTIC Science & Technology

    1988-04-11

    departments of Computer Science, Electrical Engineering, Mathematics and Psychology , eight full-time researchers and over thirty research assis- tants. -4- 2...and the problems for each. Using psychological evidence, he argued for a form of inhibition (Renshaw) over the usual winner-take-all lateral inhibition...00 LUNCH Barnden LUNCli 12:00-1:00 Holiday Inn Iolidav Inn 1:00-2:00 Schvaneveldt BRUNCH 2:00-3:00 Dyer Double 3:00-3:30 BREAK Eale 3:30-4:30 Birnbaum

  18. Proceedings of the TRADOC/Training Developments Institute Chiefs of Anlaysis Seminar (4th) Held in Hampton, Virginia, 16-18 July 1980.

    DTIC Science & Technology

    1980-09-30

    NOTES .1 ’ ; R CT A!tI AA IGIUFI 2" T 19. KEY WORDS (Cowntinuw on revereo side. it nriwa!*1W. I ,.&nab~ Basic Skills Education Program Critical Task...Analysis Seminar held at the Hampton Holiday Inn, VA; 16-18 July 1980. The major ,i themes of this seminar were the TRAnOC Basic Skills Education Program...VA was held at the HIpton Holiday Inn, Hampton, Virginia, 16 thru 18 July 1980. The major thes of this seminar was the TRADxC Basic Skills Education

  19. Parks and recreation: Concerns raised about National Park Service actions at Delaware Water Gap

    SciTech Connect

    Not Available

    1987-01-01

    The National Park Service followed Department of the Interior regulations, policies, and guidelines in soliciting and reviewing proposals and determining that Shawnee Inn was the successful bidder in the lease of the Copper Mine Inn at the Delaware Water Gap National Recreation Area located in Pennsylvania and New Jersey. The National Park Service's decision to close the commercial campground operated by Mr. Donald Von Hagan is consistent with the general management planning process. Mr. Von Hagan's rent represents the fair market rental rate established by an independent appraiser.

  20. 36 CFR 1005.9 - Discrimination in furnishing public accommodations and transportation services.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ..., inn, lodge, or other facility or accommodation offered to or enjoyed by the general public within the... national origin in furnishing or refusing to furnish such person or persons any accommodation, facility... will be conspicuous to any person seeking accommodations, facilities, services, or privileges:...

  1. 36 CFR 5.9 - Discrimination in furnishing public accommodations and transportation services.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... employees of any hotel, inn, lodge, or other facility or accommodation offered to or enjoyed by the general... vehicle service and its employees, are prohibited from: (1) Publicizing the facilities, accommodations or... origin in furnishing or refusing to furnish such person or persons any accommodation, facility,...

  2. 75 FR 81642 - Long-Term North to South Water Transfer Program, Sacramento County, CA

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-28

    ..., Bureau of Reclamation (Reclamation) and the San Luis & Delta-Mendota Water Authority propose to prepare a... water agencies south of the Sacramento-San Joaquin Delta (Delta) and in the San Francisco Bay Area. The.... Sacramento at the Best Western Expo Inn & Suites, 1413 Howe Avenue. Los Banos at the San Luis &...

  3. Highly Accurate Antibody Assays for Early and Rapid Detection of Tuberculosis in African and Asian Elephants

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Tuberculosis (TB) in elephants is a re-emerging zoonotic disease caused primarily by Mycobacterium tuberculosis. Current methods for screening and diagnosis rely on trunk wash culture, which has serious limitations due to low test sensitivity, slow turn-around time, and variable sample quality. Inn...

  4. 77 FR 68764 - Parker Knoll Hydro, LLC; Notice of Intent To Prepare An Environmental Impact Statement and Notice...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-16

    ... Parker Mountain, near the Town of Richfield, Piute County, Utah. The project would occupy 458.7 acres of.... Address: 20 West 1400 North, Richfield, Utah. Public Scoping Meeting Date: December 11, 2012. Time: 6:00 p.m. (MST). Place: Holiday Inn Express. Address: 20 West 1400 North, Richfield, Utah. Copies of...

  5. 2009 Analysis Platform Review Report

    SciTech Connect

    Ferrell, John

    2009-12-01

    This document summarizes the recommendations and evaluations provided by an independent external panel of experts at the U.S. Department of Energy Biomass Program’s Analysis platform review meeting, held on February 18, 2009, at the Marriott Residence Inn, National Harbor, Maryland.

  6. 7. Oblique view southeast of north end of building. Scale ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. Oblique view southeast of north end of building. Scale visible adjacent to door at lower right. Compare to HABS-CA-2611-B-4. - Deetjen's Big Sur Inn, Hayloft Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  7. Computation, Mathematics and Logistics Department Report for Fiscal Year 1978.

    DTIC Science & Technology

    1980-03-01

    ENCODING CONSTRAINTS PROGRAM SYSTEMS UER INN INFORMATION FILE DESIGN ANALYST FIELDY IES S M ANALYZER ADATA BASE ROUTINE DESIGNER RECORD COMPUTER...NTIPS automation is considered feasible. Prototypes for all the functions can be built. The big payoff areas are in improved TI update capability and

  8. 37. DINING ROOM FROM BALCONY. THE DINING ROOM ROOF IS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    37. DINING ROOM FROM BALCONY. THE DINING ROOM ROOF IS SUPPORTED BY A SCISSOR TRUSS SYSTEM REINFORCED WITH TURNBUCKLE IRON RODS AND GUSSET PLATES (NOTE: THIS SYSTEM DIFFERS FROM THE LOBBY). - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  9. 1. Historic American Buildings Survey, August, 1971 SOUTH (FRONT) ELEVATIONS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. Historic American Buildings Survey, August, 1971 SOUTH (FRONT) ELEVATIONS OF CORNER OF UNITED STATES HOTEL (FAR LEFT), JUDGE AND NUNAN'S SADDLERY, P.J. RYAN'S FIRST BRICK STORE BUILDING (JACKSONVILLE INN). - P. J. Ryan's First Brick Store Building, 175 East California Street, Jacksonville, Jackson County, OR

  10. 77 FR 24555 - Sunshine Act Meeting Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-24

    ... From the Federal Register Online via the Government Publishing Office TENNESSEE VALLEY AUTHORITY Sunshine Act Meeting Notice Meeting No. 12-02 April 26, 2012 The TVA Board of Directors will hold a public meeting on April 26, 2012, in the Grand Ballroom at the General Morgan Inn, 111 North Main...

  11. 75 FR 6435 - Sunshine Act Meeting Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-09

    ... From the Federal Register Online via the Government Publishing Office TENNESSEE VALLEY AUTHORITY Sunshine Act Meeting Notice The TVA Board of Directors will hold a public meeting on February 11, 2010, at the Holiday Inn Hotel and Suites, Bristol Convention Center, Ballrooms B/C, 3005 Linden Drive,...

  12. Drug packaging. A key factor to be taken into account when choosing a treatment.

    PubMed

    2011-10-01

    A drug's packaging contributes to its harm-benefit balance. Highlighting the key practical information and identifying potential sources of error or mix-ups is part and parcel of the correct use of medicines. Select labelling that clearly and prominently displays the important information, including the international nonproprietary name (INN).

  13. Manual of Endoscopic Sinus and Skull Base Surgery

    PubMed Central

    Hawthorne, Maurice

    2014-01-01

    If you would like to submit a book to the Annals for review, please send two copies to: Publications Department, The Royal College of Surgeons of England, 35–43 Lincoln’s Inn Fields, London WC2A 3PE. Book reviews are published at the discretion of the editor.

  14. 76 FR 52596 - Proposed Establishment of Class C Airspace for Long Beach, CA; Public Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-23

    ... Federal Aviation Administration 14 CFR Part 71 Proposed Establishment of Class C Airspace for Long Beach... airspace users and others, concerning a proposal to establish Class C airspace at Long Beach, CA. The... on or before December 12, 2011. ADDRESSES: The meetings will be held at the Holiday Inn Long...

  15. Mahlzeit! (Enjoy Your Meal!) German Table Manners, Menus, and Eating Establishments.

    ERIC Educational Resources Information Center

    Singer, Debbie

    A series of short texts focus on German eating habits and types of eating establishments. Vocabulary is glossed in the margin and each text is followed by comprehension questions. Menus from a restaurant, an inn, and a fast-food restaurant; vocabulary exercises; a word search puzzle and its solution; and directions in English for conversational…

  16. Seminars in Liver Disease

    PubMed Central

    2014-01-01

    If you would like to submit a book to the Annals for review, please send two copies to: Publications Department, The Royal College of Surgeons of England, 35–43 Lincoln’s Inn Fields, London WC2A 3PE. Book reviews are published at the discretion of the editor.

  17. The River Talks: An Ecocritical "Korero" about Ecological Performance, Community Activism and "Slow Violence"

    ERIC Educational Resources Information Center

    Matthewman, Sasha; Mullen, Molly; Patuwai, Tamati

    2015-01-01

    On 27 February 2013, Mad Ave staged "The River Talks," a collation of linked performances in and on the banks of the Omaru River in Glen Innes, Auckland, New Zealand. The event brought together artistic and discursive works that challenged a view of this local river as always and forever degraded. An example of committed ecological…

  18. Control of Fuel Microorganisms with Magnetic Devices: Laboratory Investigation with Hormoconis Resinae

    DTIC Science & Technology

    1991-11-01

    Aircraft Materials Technical Memorandum 408 CONTROL OF FUEL MICROORGANISMS WITH MAGNETIC DEVICES: LABORATORY INN, ESTIGATION WITH HORMOCONIS RESINAE...LABORATORY Aircraft Materials Technical Memorandum 408 CONTROL OF FUEL MICROORGANISMS WITH MAGNETIC DEVICES: LABORATORY INVESTIGATION WITH HORMOCONIS...presence of a grey black material , which probably arose from the magneticmaterial in the device. This material was most likely responsible for the

  19. 78 FR 68825 - Strategic Environmental Research and Development Program, Scientific Advisory Board; Notice of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-15

    .... ADDRESSES: Holiday Inn Ballston, 4610 North Fairfax Drive, Arlington, VA 22203. FOR FURTHER INFORMATION...; or by telephone at (571) 372-6384. SUPPLEMENTARY INFORMATION: This meeting is being held under the... Water Impacted by AFFFs. 4:25 p.m Strategy Session Dr. Anne Andrews, Acting Executive Director. 5:00...

  20. 9. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    9. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 CLOSE-UP OF SMALL FRONT FIREPLACE, SOUTHWEST ROOM. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  1. 11. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    11. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 SOUTHWEST ROOM SHOWING ORIGINAL CORNER FIREPLACE, OPENING BEHIND BAR. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  2. 8. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    8. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 REEDING DETAIL OF MANTEL IN NORTHEAST PARLOR. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  3. 13. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    13. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 STAIR DETAIL, SECOND FLOOR LEVEL (INSPECTION OF STAIR REVEALS PRESENCE OF A STRING OPPOSITE BANNISTER ORIGINALLY). - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  4. 6. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 NORTHWEST ROOM SHOWING COOK FIREPLACE, ORIGINAL MANTEL, CRANE AND OPENING FOR BAKE OVEN. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  5. 12. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    12. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 CLOSE-UP DETAIL OF CORNER FIREPLACE. - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  6. Proceedings of the 2015 Sorghum Improvement Conference of North America (SICNA)

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The 2015 Sorghum Improvement Conference of North America (SICNA) meeting was held at the Hilton Garden Inn, Manhattan, KS from September 1-3, 2015. The meeting was attended by nearly 200 participants representing a diverse cross section of the sorghum industry including sorghum research community fr...

  7. Fulfilling Dreams: Transitions into an ECE Online Preservice Teacher Education Degree

    ERIC Educational Resources Information Center

    Taylor, Pauline

    2009-01-01

    There is increased attention on the first year experience at universities generally as a result of the Australian federal government's focus on increased accountability for universities and widening participation in further education (DEST, 2003; Jardine & Krause, 2005; Kift, 2005; Krause, Hartley, James & McInnes, 2005). However, these…

  8. 76 FR 18540 - Environmental Management Site-Specific Advisory Board, Northern New Mexico

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-04

    ... Environmental Management Site-Specific Advisory Board, Northern New Mexico AGENCY: Department of Energy. ACTION...-Specific Advisory Board (EM SSAB), Northern New Mexico (known locally as the Northern New Mexico Citizens....m.-4 p.m. ADDRESSES: Holiday Inn Express and Suites, 60 Entrada Drive, Los Alamos, New Mexico...

  9. 78 FR 63243 - Notice of Public Meeting; Wyoming Resource Advisory Council

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-23

    ... Reclamation Center, participation in the University of Wyoming's ``A Landscape Discussion on Energy Law in.... at the Holiday Inn Laramie. On Wednesday, November 13, ``A Landscape Discussion on Energy Law in... Wyoming Energy Innovation Center, 1020 East Lewis Street, Laramie, Wyoming. The public may attend the...

  10. Connect the Book. The Midnight Ride of Paul Revere

    ERIC Educational Resources Information Center

    Brodie, Carolyn S.

    2005-01-01

    The famous poem "The Midnight Ride of Paul Revere" by Henry Wadsworth Longfellow (originally included in "Tales of a Wayside Inn" as "The Landlord's Tale") has been illustrated by a number of children's book artists over the years. One particular version of note was graved and painted by Christopher Bing and published by Handprint Books in 2001.…

  11. Final Report

    SciTech Connect

    Ananda M. Chakrabarty

    2009-06-18

    This is the front matter for the 7th Biennial Symposium, International Society for Environmental Biotechnology, held at the Holiday Inn Chicago Mart Plaza, Chicago, Illinois on the dates of June 18-21, 2004. It contains a list of the symposium organizers, acknowledgements and the symposium overview.

  12. Technology in the Classroom.

    ERIC Educational Resources Information Center

    Speidel, Gisela E., Ed.

    1995-01-01

    This theme issue contains 20 articles dealing with technology in the classroom. The articles are: (1) "Distance Learning and the Future of Kamehameha Schools Bishop Estate" (Henry E. Meyer); (2) "Technology and Multiple Intelligences" (Bette Savini); (3) "Technology Brings Voyagers into Classrooms" (Kristina Inn and…

  13. Project ES '70 Training for Local Coordinators. Final Report.

    ERIC Educational Resources Information Center

    Jacobson, Majory E.

    The "organic curriculum" of the Educational System of the Seventies Project (ES '70) is one which integrates academic training, occupational training, and personal development in grades nine through 12 and which draws heavily on research dealing with individualized instruction. The program held at Kingsley Inn, Bloomfield Hills,…

  14. High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Ibáñez, J.; Oliva, R.; Manjón, F. J.; Segura, A.; Yamaguchi, T.; Nanishi, Y.; Cuscó, R.; Artús, L.

    2013-09-01

    We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanism responsible for the selective excitation of LO phonons with large wave vectors in w-InN. The pressure behavior of the L- coupled mode observed in a heavily doped n-type sample allows us to estimate the pressure dependence of the electron effective mass in w-InN. The results thus obtained are in good agreement with k·p theory. The wurtzite-to-rocksalt phase transition on the upstroke cycle and the rocksalt-to-wurtzite backtransition on the downstroke cycle are investigated, and the Raman spectra of both phases are interpreted in terms of DFT lattice-dynamical calculations.

  15. 7. View southwest of 'Chalet' room from doorway. Windows beyond ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. View southwest of 'Chalet' room from doorway. Windows beyond bed are in southwest end of building, while those at left overlook Castro Creek Canyon. Scale visible against door frame near head of bed. - Deetjen's Big Sur Inn, Champagne Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  16. View northeast of southwest end at south corner of building. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    View northeast of southwest end at south corner of building. Castro Creek Canyon drops off sharply at right of picture, precluding photography of southeast side of building (see HABS-CA-2611-4 for reference.) - Deetjen's Big Sur Inn, Antique Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  17. Studies of Optical Wave Front Conjugation and Imaging Properties of Nematic Liquid Crystal Films.

    DTIC Science & Technology

    1986-06-01

    AFOSR84O375). Y. R. Shen’s research is supported by a National 4. See. for example, M. Tobias , International Handbook of Liquid Crvstal Science Foundation...vol. A27, pp. 1968-1976,1983;see tal above the I reedericksz transition," AppL. Phys. Lett., vol. 37, also I. P. Battra, R. II. I.nns, and 1). Pohl

  18. Columbine Author Speaks at Conference

    ERIC Educational Resources Information Center

    Cook, Andrea J.

    2004-01-01

    Brooks Brown, the author of No Easy Answers: The Truth Behind Death at Columbine High School, spoke at the 11th annual Reclaiming Youth International No Disposable Kids conference at Rushmore Plaza Holiday Inn. Brown, who worked with Michael Moore on his Academy Award winning documentary, "Bowling for Columbine," said the letters he…

  19. 5. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. Historic American Buildings Survey, Pierre LeBoutillier and Trusten M. Baldwin, Photographers, April, 1960 INTERIOR DETAIL, NORTHEAST AND SOUTHEAST PARLORS, ORIGINAL MANTEL (LEFT - RADIATOR COVERED). - King of Prussia Inn, U.S. Route 202 (Upper Merion Township), King of Prussia, Montgomery County, PA

  20. Calling All Golfers | Poster

    Cancer.gov

    Teams are forming for the third annual R&W Club Frederick Golf Tournament on Sept. 14. Last year’s tournament hosted more than 40 players and raised nearly $1,000 for the NIH Children’s Inn, Bethesda, Md.  The tournament will be held at Maryland National Golf Club in Middletown, Md. 

  1. Novel compound semiconductor devices based on III-V nitrides

    SciTech Connect

    Pearton, S.J.; Abernathy, C.R.; Ren, F.

    1995-10-01

    New developments in dry and wet etching, ohmic contacts and epitaxial growth of Ill-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts.

  2. Schein’s Common Sense: Prevention and Management of Surgical Complications

    PubMed Central

    Britton, David

    2014-01-01

    If you would like to submit a book to the Annals for review, please send two copies to: Publications Department, The Royal College of Surgeons of England, 35–43 Lincoln’s Inn Fields, London WC2A 3PE. Book reviews are published at the discretion of the editor.

  3. Simulating the Law: Experiential "Teachniques" in the Modern Law Curricula

    ERIC Educational Resources Information Center

    Daly, Yvonne; Higgins, Noelle

    2010-01-01

    The concept of arguing aspects of legal scenarios in order to facilitate student learning within the law curriculum originated in the vocational Inns of Court in fourteenth-century England. Nowadays, simulations of court proceedings, such as moot courts and mock trials, are widely employed as educational tools in law modules in third-level…

  4. Misaggregation Explains Conservative Inference About Normally Distributed Populations

    DTIC Science & Technology

    1975-08-01

    hlhiqin.uy. Typicnl projects include studies of the effect of diversion on recidivism among ixw Angeles area juvenile delinquents, and evaluation of...the effects of decriminalization of status offenders . Drrision nnnlys’n nmi social t>n>grtirn nahm,inn. Typical projects include study of

  5. 2012 BATTERIES GORDON RESEARCH CONFERENCE, MARCH 4-9, 2012

    SciTech Connect

    Stephen Harris

    2012-03-09

    The Gordon Research Conference on BATTERIES was held at Four Points Sheraton / Holiday Inn Express, Ventura, California, March 4-9, 2012. The Conference was well-attended with 176 participants. Gordon Research Conferences does not permit publication of meeting proceedings.

  6. Baker cyst

    MedlinePlus

    ... sports medicine. In: Goldman L, Schafer AI, eds. Goldman's Cecil Medicine . 25th ed. Philadelphia, PA: Elsevier Saunders; 2016:chap 263. Huddleston JI, Goodman S. Hip and knee pain. In: Firestein GS, Budd RC, Gabriel SE, McInnes IB, O'Dell ...

  7. 25. LOBBY FIREPLACE. NOTE THE GEYSER DECORATING THE FIREPLACE SCREEN ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    25. LOBBY FIREPLACE. NOTE THE GEYSER DECORATING THE FIREPLACE SCREEN AND THE WEIGHTS AND PENDULUM HANGING FROM THE CLOCK DESIGNED BY ARCHITECT ROBERT C. REAMER. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  8. Getting Down to Business: Innkeeping, Module 13. Teacher Guide. Entrepreneurship Training Components.

    ERIC Educational Resources Information Center

    Rassen, Rachel L.

    This is the thirteenth in a set of 36 teacher guides to the Entrepreneurial Training Modules and accompanies CE 031 054. Its purpose is to give students some idea of what it is like to own and operate an inn. Following an overview are general notes on use of the module. Suggested steps for module use contain suggestions on introducing the module,…

  9. 78 FR 26350 - Columbia Gas Transmission, LLC; Notice of Intent To Prepare an Environmental Assessment for the...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-06

    ... and location: 8:00 a.m. Thursday, May 16, 2013, Holiday Inn Express, 805 Oakvale Rd., Princeton, West... becoming an intervenor are in the User's Guide under the ``e-filing'' link on the Commission's Web site... three digits in the Docket Number field (i.e., CP13- 125). Be sure you have selected an appropriate...

  10. 27. LOBBY, LOOKING NORTHEAST FROM SECOND FLOOR. THE STRUCTURE IN ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    27. LOBBY, LOOKING NORTHEAST FROM SECOND FLOOR. THE STRUCTURE IN UPPER LEFT HAND SIDE OF PHOTOGRAPH, A MUSICIANS' PLATFORM CALLED 'THE CROW'S NEST' WAS BUILT IN THE GABLE. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  11. 5. View to east of west elevation. Second story deck ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. View to east of west elevation. Second story deck at right opens off 'Fireside' guest room; Helmuth Deetjen hand-carved the balusters. Scale just visible against first story wall at lower right. - Deetjen's Big Sur Inn, Hayloft Building, East Side of State Highway 1, Big Sur, Monterey County, CA

  12. 12 CFR 723.21 - Definitions.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... development loan does not include loans to finance maintenance, repairs, or improvements to an existing income... wallpaper of an operating inn would not be a construction or development loan as it neither converts the use... the allowance for loan and lease losses account....

  13. 78 FR 63971 - Draft Supplemental Environmental Impact Statement for the Introduction of the P-8A Multi-Mission...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-25

    ... Department of the Navy Draft Supplemental Environmental Impact Statement for the Introduction of the P-8A...) announcing the scheduling of two public meetings on the Draft Supplemental Environmental Impact Statement... following locations: 1. Thursday, November 7, 2013 at Holiday Inn Hotel & Suites, 620 Wells Road,...

  14. 75 FR 15457 - Aquatic Nuisance Species Task Force Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-29

    ... Fish and Wildlife Service Aquatic Nuisance Species Task Force Meeting AGENCY: Fish and Wildlife Service... SUPPLEMENTARY INFORMATION section. DATES: The ANS Task Force will meet from 8 a.m. to 5 p.m. on Wednesday, May 5... place at the Holiday Inn Hotel & Convention Center by the Bay, 88 Spring Street, Portland, ME...

  15. The New Poverty: Homeless Families in America.

    ERIC Educational Resources Information Center

    Nunez, Ralph da Costa

    This book discusses homeless families in the United States and advocates the efforts of residential educational and employment training centers--American Family Inns--which provide comprehensive services education, job training, and parenting and life skills to address the poverty-related conditions that contribute to homelessness. Chapters of the…

  16. 75 FR 61860 - Advisory Committee on Women Veterans; Notice of Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-06

    ... AFFAIRS Advisory Committee on Women Veterans; Notice of Meeting The Department of Veterans Affairs (VA... Women Veterans will meet October 26-28, 2010, at the Hilton Garden Inn, in the Georgetown Ballroom, 815... of women Veterans with respect to health care, rehabilitation, compensation, outreach, and...

  17. 76 FR 79707 - Notice of Public Meetings, Twin Falls District Resource Advisory Council, Idaho

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-22

    ... Bureau of Land Management Notice of Public Meetings, Twin Falls District Resource Advisory Council, Idaho... Interior, Bureau of Land Management (BLM) Twin Falls District Resource Advisory Council (RAC) and..., 2012, the Twin Falls District RAC members will meet at the Best Western Sawtooth Inn at 2653 S....

  18. Getting Down to Business: Innkeeping, Module 13. [Student Guide]. Entrepreneurship Training Components.

    ERIC Educational Resources Information Center

    Rassen, Rachel L.

    This module on owning and operating an inn is one of 36 in a series on entrepreneurship. The introduction tells the student what topics will be covered and suggests other modules to read in related occupations. Each unit includes student goals, a case study, and a discussion of the unit subject matter. Learning activities are divided into…

  19. 78 FR 64510 - Center for Scientific Review; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-29

    ... review and evaluate grant applications. Place: Doubletree Hotel Bethesda, (Formerly Holiday Inn Select), 8120 Wisconsin Avenue, Bethesda, MD 20814. Contact Person: Kenneth Ryan, PhD., Scientific Review... 7717, Bethesda, MD 20892, 301-435- 1789, kenneth.ryan@nih.hhs.gov . Name of Committee: Center...

  20. The Fashion Police: Never out of Fashion

    ERIC Educational Resources Information Center

    Barlow, Dudley

    2004-01-01

    Some readers will recall Newhart, Bob Newhart's television series from 1982 to 1990. In it, he played Dick Ludon, a New Yorker who moved to Vermont with his wife to run an inn. Stephanie Vanderkellen, a snotty, rich, young woman, worked there as a maid to appease her parents. Her boyfriend, Michael, was not rich but was as snobbish as she was.…

  1. 76 FR 46217 - Implementation of the Amendments to the International Convention on Standards of Training...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-02

    .... Friday, August 26, 2011, The Edgewater Hotel Noble House Hotels & Resorts, 2411 Alaskan Way, Pier 67... or before September 30, 2011 or reach the Docket Management Facility by that date. ADDRESSES: The..., 1201 NW Le Jeune Road, Building A, Miami, FL 33126. Wednesday, August 24, 2011, Hilton Garden Inn...

  2. Interpreting Letters and Reading Script: Evidence for Female Education and Literacy in Tudor England

    ERIC Educational Resources Information Center

    Daybell, James

    2005-01-01

    Attempts to write the history of female education are hampered by the relative informality of teaching provision for women in early modern England. Since most women were excluded from male centres of learning--the grammar schools, universities and Inns of Court--historians are deprived of institutional records, which so well elucidate the…

  3. High Power Efficiency Blue-to-Green Organic Light-Emitting Diodes Using Isonicotinonitrile-Based Fluorescent Emitters.

    PubMed

    Sasabe, Hisahiro; Onuma, Natsuki; Nagai, Yuji; Ito, Takashi; Kido, Junji

    2017-03-16

    Herein, 9,10-dihydro-9,9-dimethylacridine (Ac) or phenoxazine (PXZ)-substituted isonicotinonitrile (INN) derivatives, denoted as 2AcINN, 26AcINN, and 26PXZINN, were developed as a series of thermally activated delayed fluorescence (TADF) emitters. These emitters showed reasonably high photoluminescence quantum yields of 71-79 % in the host films and high power efficiency organic light-emitting diodes (OLEDs). Sky-blue emitter 26AcINN exhibited a low turn-on voltage of 2.9 V, a high external quantum efficiency (ηext ) of 22 %, and a high power efficiency (ηp ) of 66 lm W(-1) with Commission Internationale de l'Eclairage (CIE) chromaticity coordinates of (0.22, 0.45), whereas green emitter 26PXZINN exhibited a low turn-on voltage of 2.2 V, a high ηext of 22 %, and a high ηp of 99 lm W(-1) with CIE chromaticity coordinates of (0.37, 0.58). These performances are among the best for TADF OLEDs to date.

  4. Innovative Growth and Defect Analysis of Group III - Nitrides for High Speed Electronics

    DTIC Science & Technology

    2008-02-29

    Leymarie, A. Kavokin, H. Amano, B. Gil , 0. Briot, B. Monemar, Shubina et al. Reply, Physical Review Letters 93 (26), 269702 (2004). [Shu04b] T. Shubina, S...and InN, Physical Review B 49 (1), 14 (1994). [Vil9l] P. Villars and L. Calvert, Pearson’s Handbook of Crystallographic Data for Intermetallic Phases

  5. War Surgery: Working With Limited Resources in Armed Conflict and Other Situations of Violence (Volume 2)

    PubMed Central

    Lambert, Anthony

    2014-01-01

    If you would like to submit a book to the Annals for review, please send two copies to: Publications Department, The Royal College of Surgeons of England, 35–43 Lincoln’s Inn Fields, London WC2A 3PE. Book reviews are published at the discretion of the editor.

  6. Another Look at the Wine Butler

    ERIC Educational Resources Information Center

    DeWeerd, Alan J.

    2007-01-01

    In a recent article, Iain MacInnes analyzed the static equilibrium of a system consisting of a wine bottle and a wine butler. After discussing that composite system, students can be asked to consider only the bottle (and its contents) as the system. An interesting challenge for them is to describe the forces on the bottle in static equilibrium.

  7. 76 FR 29770 - National Cancer Institute; Notice of Closed Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-23

    ..., 2011, Time: 8 a.m. to 5 p.m. Agenda: To review and evaluate grant applications. Place: Hilton..., Scientific Review Officer, Program Coordination and Referral Branch, Division of Extramural Activities... review and evaluate grant applications. Place: Doubletree Hotel Bethesda, (Formerly Holiday Inn...

  8. 76 FR 64954 - National Institute of General Medical Sciences Notice of Closed Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-19

    ... of Committee: National Institute of General Medical Sciences Initial Review Group Biomedical Research and Research Training Review Subcommittee B Date: November 16-17, 2011. Time: 8 a.m. to 5 p.m. Agenda: To review and evaluate grant applications, Doubletree Hotel Bethesda (Formerly Holiday Inn...

  9. 2009 Infrastructure Platform Review Report

    SciTech Connect

    Ferrell, John

    2009-12-01

    This document summarizes the recommendations and evaluations provided by an independent external panel of experts at the U.S. Department of Energy Biomass program‘s Infrastructure platform review meeting, held on February 19, 2009, at the Marriott Residence Inn, National Harbor, Maryland.

  10. "Building the Natural Society of the Future": The Peckham Experiment (1943) as an Anarchist Account of Childhood and Education

    ERIC Educational Resources Information Center

    Charkin, Emily

    2014-01-01

    "The Peckham Experiment" (Innes H. Pearse and Lucy H. Crocker, Edinburgh: Scottish Academic Press, 1985) is a book about the Peckham Health Centre (1935-1950), which was a scientific experiment and community centre set up to identify and foster conditions of good health for local working-class families in South London. The book was…

  11. Guiding Users to Unmediated Interlibrary Loan

    ERIC Educational Resources Information Center

    Adams, Carolyn; Ressel, Margret J.; Silva, Erin S.

    2009-01-01

    This article provides a practitioner's guide to marketing user-initiated borrowing at the point of need. By reviewing interlibrary loan book requests and manually transferring them to an INN-Reach consortial system, Link+, the University of Nevada, Reno Libraries were able to successfully market the service, deliver materials faster, and save…

  12. Optical, structural, and transport properties of indium nitride, indium gallium nitride alloys grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Khan, Neelam

    InGaN based, blue and green light emitting diodes (LEDs) have been successfully produced over the past decade. But the progress of these LEDs is often limited by the fundamental problems of InGaN such as differences in lattice constants, thermal expansion coefficients and physical properties between InN and GaN. This difficulty could be addressed by studying pure InN and InxGa 1-xN alloys. In this context Ga-rich InxGa1-xN (x ≤ 0.4) epilayers were grown by metal organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) measurements showed InxGa1-xN films with x= 0.37 had single phase. Phase separation occurred for x ˜ 0.4. To understand the issue of phase separation in Ga-rich InxGa 1-xN, studies on growth of pure InN and In-rich InxGa 1-xN alloys were carried out. InN and In-rich InxGa1-xN (x ˜ 0.97-0.40) epilayers were grown on AlN/Al2O3 templates. A Hall mobility of 1400 cm2/Vs with a carrier concentration of 7x1018cm -3 was observed for InN epilayers grown on AlN templates. Photoluminescence (PL) emission spectra revealed a band to band emission peak at ˜0.75 eV for InN. This peak shifted to 1.15 eV when In content was varied from 1.0 to 0.63 in In-rich InxGa1-xN epilayers. After growth parameter optimization of In-rich InxGa1-xN alloys with (x = 0.97-0.40) were successfully grown without phase separation. Effects of Mg doping on the PL properties of InN epilayers grown on GaN/Al 2O3 templates were investigated. An emission line at ˜ 0.76 eV, which was absent in undoped InN epilayers and was about 60 meV below the band edge emission peak at ˜ 0.82 eV, was observed to be the dominant emission in Mg-doped InN epilayers. PL peak position and the temperature dependent emission intensity corroborated each other and suggested that Mg acceptor level in InN is about 60 meV above the valance band maximum. Strain effects on the emission properties of InGaN/GaN multiple quantum wells (MQWs) were studied using a single blue LED wafer possessing a continuous

  13. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    NASA Technical Reports Server (NTRS)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  14. Biosecurity and Vector Behaviour: Evaluating the Potential Threat Posed by Anglers and Canoeists as Pathways for the Spread of Invasive Non-Native Species and Pathogens

    PubMed Central

    Anderson, Lucy G.; White, Piran C. L.; Stebbing, Paul D.; Stentiford, Grant D.; Dunn, Alison M.

    2014-01-01

    Invasive non-native species (INNS) endanger native biodiversity and are a major economic problem. The management of pathways to prevent their introduction and establishment is a key target in the Convention on Biological Diversity's Aichi biodiversity targets for 2020. Freshwater environments are particularly susceptible to invasions as they are exposed to multiple introduction pathways, including non-native fish stocking and the release of boat ballast water. Since many freshwater INNS and aquatic pathogens can survive for several days in damp environments, there is potential for transport between water catchments on the equipment used by recreational anglers and canoeists. To quantify this biosecurity risk, we conducted an online questionnaire with 960 anglers and 599 canoeists to investigate their locations of activity, equipment used, and how frequently equipment was cleaned and/or dried after use. Anglers were also asked about their use and disposal of live bait. Our results indicate that 64% of anglers and 78.5% of canoeists use their equipment/boat in more than one catchment within a fortnight, the survival time of many of the INNS and pathogens considered in this study and that 12% of anglers and 50% of canoeists do so without either cleaning or drying their kit between uses. Furthermore, 8% of anglers and 28% of canoeists had used their equipment overseas without cleaning or drying it after each use which could facilitate both the introduction and secondary spread of INNS in the UK. Our results provide a baseline against which to evaluate the effectiveness of future biosecurity awareness campaigns, and identify groups to target with biosecurity awareness information. Our results also indicate that the biosecurity practices of these groups must improve to reduce the likelihood of inadvertently spreading INNS and pathogens through these activities. PMID:24717714

  15. The Vela Supernova Remnant

    NASA Astrophysics Data System (ADS)

    Raymond, John C.

    We wish to obtain both emission and absorption line observations of the Vela Supernova remnant. The filament we wish to study in emission is the brightest filament in the SNR, so it will provide a spectrum twice the quality of any in existence. It is also located at the edge of an unusual bulge in the SNR, and it can be used to test the level of departure from pressure equilibrium in the remnant, which is useful as a test of evaporative models of SNR evolution. The absorption line studies will look for evidence of the drastically unstable behavior of shocks above 150 km/s predicted by Innes and Giddings. Four of the stars studied by Jenkins, Silk and Wallerstein showed marginal evidence for two positive or two negative high velocity components. If these multiple velocity components are confirmed, they support the secondary shock predictions of Innes and Giddings.

  16. Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence

    SciTech Connect

    Seetoh, I. P.; Soh, C. B.; Fitzgerald, E. A.; Chua, S. J.

    2013-03-11

    Auger recombination in InN films grown by metal-organic chemical vapor deposition was studied by steady-state photoluminescence at different laser excitation powers and sample temperatures. It was dominant over radiative recombination and Shockley-Read-Hall recombination at low temperatures, contributing to the sub-linear relationship between the integrated photoluminescence intensity and laser excitation power. Auger recombination rates increased gradually with temperature with an activation energy of 10-17 meV, in good agreement with values from transient photoluminescence reported in literature. As the Auger recombination rates were independent of material quality, they may form an upper limit to the luminous efficiency of InN.

  17. Effects of Inelastic Neutrino-Nucleus Scattering on Supernova Dynamics and Radiated Neutrino Spectra

    SciTech Connect

    Langanke, K.; Martinez-Pinedo, G.; Mueller, B.; Janka, H.-Th.; Marek, A.; Hix, W. R.; Juodagalvis, A.; Sampaio, J. M.

    2008-01-11

    Based on the shell model for Gamow-Teller and the random phase approximation for forbidden transitions, we calculate cross sections for inelastic neutrino-nucleus scattering (INNS) under supernova (SN) conditions, assuming a matter composition given by nuclear statistical equilibrium. The cross sections are incorporated into state-of-the-art stellar core-collapse simulations with detailed energy-dependent neutrino transport. While no significant effect on the SN dynamics is observed, INNS increases the neutrino opacities noticeably and strongly reduces the high-energy tail of the neutrino spectrum emitted in the neutrino burst at shock breakout. Relatedly the expected event rates for the observation of such neutrinos by earthbound detectors are reduced by up to about 60%.

  18. Shared-savings cuts hotel's losses from EMS removal

    SciTech Connect

    Galvin, C.

    1982-11-08

    A shared-savings contract will minimize the Myrtle Beach, SC Downtown Holiday Inn's losses of replacing a poorly performing Energy Master energy-management system with Scientific Atlanta equipment. The contract with Energy Master Inc. (EMI), which saved Holiday Inn the $80,000 to $90,000 purchase price, also permitted removal (a year after installation) of the equipment when it failed to generate energy savings. A dispute between Associated Energy Consultants (AEC), which was to receive half the savings in exchange for arranging the equipment financing, is described. At $51,745, the 262-point Scientific Atlanta system should have a 1.7-year payback. The hotel's electric bills were $2000 a month lower during the first three months of operation. (DCK)

  19. Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

    SciTech Connect

    Khanal, D. R.; Levander, A. X.; Wu, J.; Yu, K. M.; Liliental-Weber, Z.; Walukiewicz, W.; Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E.

    2011-08-01

    We demonstrate the isolation of two free carrier scattering mechanisms as a function of radial band bending in InN nanowires via universal mobility analysis, where effective carrier mobility is measured as a function of effective electric field in a nanowire field-effect transistor. Our results show that Coulomb scattering limits effective mobility at most effective fields, while surface roughness scattering only limits mobility under very high internal electric fields. High-energy {alpha} particle irradiation is used to vary the ionized donor concentration, and the observed decrease in mobility and increase in donor concentration are compared to Hall effect results of high-quality InN thin films. Our results show that for nanowires with relatively high doping and large diameters, controlling Coulomb scattering from ionized dopants should be given precedence over surface engineering when seeking to maximize nanowire mobility.

  20. Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

    SciTech Connect

    Soto Rodriguez, Paul E. D. Aseev, Pavel; Gómez, Victor J.; Kumar, Praveen; Ul Hassan Alvi, Naveed; Calleja, Enrique; Morales, Francisco M.; Senichev, Alexander; Lienau, Christoph; Nötzel, Richard

    2015-01-12

    The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In{sub 0.73}Ga{sub 0.27}N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 10{sup 9} cm{sup −2}. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

  1. III-Nitride nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  2. Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

    NASA Astrophysics Data System (ADS)

    Guo, L.; Wang, X. Q.; Zheng, X. T.; Yang, X. L.; Xu, F. J.; Tang, N.; Lu, L. W.; Ge, W. K.; Shen, B.; Dmowski, L. H.; Suski, T.

    2014-03-01

    We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.

  3. Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement.

    PubMed

    Guo, L; Wang, X Q; Zheng, X T; Yang, X L; Xu, F J; Tang, N; Lu, L W; Ge, W K; Shen, B; Dmowski, L H; Suski, T

    2014-03-13

    We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.

  4. Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

    PubMed Central

    Guo, L.; Wang, X. Q.; Zheng, X. T.; Yang, X. L.; Xu, F. J.; Tang, N.; Lu, L. W.; Ge, W. K.; Shen, B.; Dmowski, L. H.; Suski, T.

    2014-01-01

    We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions. PMID:24621830

  5. Effects of inelastic neutrino-nucleus scattering on supernova dynamics and radiated neutrino spectra.

    PubMed

    Langanke, K; Martínez-Pinedo, G; Müller, B; Janka, H-Th; Marek, A; Hix, W R; Juodagalvis, A; Sampaio, J M

    2008-01-11

    Based on the shell model for Gamow-Teller and the random phase approximation for forbidden transitions, we calculate cross sections for inelastic neutrino-nucleus scattering (INNS) under supernova (SN) conditions, assuming a matter composition given by nuclear statistical equilibrium. The cross sections are incorporated into state-of-the-art stellar core-collapse simulations with detailed energy-dependent neutrino transport. While no significant effect on the SN dynamics is observed, INNS increases the neutrino opacities noticeably and strongly reduces the high-energy tail of the neutrino spectrum emitted in the neutrino burst at shock breakout. Relatedly the expected event rates for the observation of such neutrinos by earthbound detectors are reduced by up to about 60%.

  6. Effect of Power Bleaching on the Fluorosis Stained Anterior Teeth Case Series

    PubMed Central

    M, Annapoorna B; Tejaswi, Sunil; Shetty, Suneeth; K, Sowmya H

    2014-01-01

    Bleaching is a conservative method for restoring the colour of intrinsic discoloration of teeth. The combination of McInnes solution and power bleaching is effective procedure for bleaching of fluorosis stained teeth. Definitely bleaching with McInnes bleaching agent gives instant results, not dependent on patient’s compliance as other office based procedures, no dehydration of the tooth occurs with no damage to the pulp. Bleaching with this solution is esthetically pleasing and minimally invasive option for young patients rather than a complete coronal covering. The dentist is in complete control of the process throughout the treatment. It is a fast process the results are evident even after a single visit. PMID:25302292

  7. Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates.

    PubMed

    Yang, Yi; Ling, Yichuan; Wang, Gongming; Lu, Xihong; Tong, Yexiang; Li, Yat

    2013-03-07

    We report a general strategy for synthesis of gallium nitride (GaN) and indium nitride (InN) nanowires on conductive and flexible carbon cloth substrates. GaN and InN nanowires were prepared via a nanocluster-mediated growth method using a home built chemical vapor deposition (CVD) system with Ga and In metals as group III precursors and ammonia as a group V precursor. Electron microscopy studies reveal that the group III-nitride nanowires are single crystalline wurtzite structures. The morphology, density and growth mechanism of these nanowires are determined by the growth temperature. Importantly, a photoelectrode fabricated by contacting the GaN nanowires through a carbon cloth substrate shows pronounced photoactivity for photoelectrochemical water oxidation. The ability to synthesize group III-nitride nanowires on conductive and flexible substrates should open up new opportunities for nanoscale photonic, electronic and electrochemical devices.

  8. An Application of a Management Performance Audit Program.

    DTIC Science & Technology

    1980-12-01

    underscored just how costly it is to drive a car . As shown in Chart A, automobile operating costs per mile have almost doubled between 1970 and 1979. 41 U.S...20 d. Franchise Requirements ------------------ 21 e. Incidents of Animal Propulsion ---------- 22 f. Development of the Cable Car ------------ 23 g...34Remedy" -------------------------------- 28 c. Dawn of the Automobile ------------------ 30 d. Death of the Intraurban Railways -------- 31 inn- S e

  9. Technology Insertion (TI)/Industrial Process Improvement (IPI). Task Order no. 1 (Misc Manufacturing). Book 1. Database Documentation Book for OO-ALC MANPWW (Overview Layouts)

    DTIC Science & Technology

    1989-12-15

    materials to be sprayed. These basic forms are gas combustion and electric arc. The gas combustion process uses oxygen and acetylene as a heating source...OS Acetylene . Technical. Dissolved In-N-800 iydreen 23-0-192 Oxygo. Technical. Gas and Liquid STANDARDI MIL ITART MIL-STD-808 Grinding of Chrome...about layout3 equipment and processes r or this ROC. *Misc Manufacturing - Flame spr’ay, casting, heat treat, welding 14. SUBJECT TERMS ~ )T

  10. Proceedings of Two Symposia on Nondestructive Testing of Tires

    DTIC Science & Technology

    1978-05-01

    REGISTRATION Ballroom , The Holiday Inn Cascade, Akron, Ohio CONVENE MEETING Paul E. J. Vogel, Army Materials and Mechanics Research Center, Watertown...we in- vite the family to go to the Coliseum to a hockey or basketball game. In the winter, we have our scholarship dance . This year it’s...ceiling with big dollar signs dancing in their eyes like proverbial sugar plums. I’m sorry but again money, unfortunately, rears its ugly head. As

  11. Full Food Service Contract for Army Dining Facilities

    DTIC Science & Technology

    1982-01-01

    FOSTlwr. (G- »«I •* II V TTA fPFP ft IC»«I ^TFT DO|N«r< C INN ft bf f *• NOODlF sour O-il ? PAPNESAN C’OJUNS (t-ltl M*BECUfn...C-6) 65 Exhibit 6 (cont’d) Menu Notes 1 Roll and Sweet Dough Mixes Yeast mav or may not be included as an ingredient in roll and sweet dough

  12. Special Workshop: Kolsky/Split Hopkinson Pressure Bar Testing of Ceramics

    DTIC Science & Technology

    2006-09-01

    Exposition on Advanced Ceramics and Composites, Cocoa Beach, FL, on 27 January 2005. This special report is a collection of the pertinent information from...SHPB Ceramic Testing of Armor Ceramics, Cocoa Beach, FL, January 27, 2005 11 Special Workshop – Kolsky/Split Hopkinson Pressure Bar Testing of...Hopkinson Pressure Bar Testing of Ceramics held 27 January 2005 at the Holiday Inn, Cocoa Beach, FL, in conjunction with the American Ceramic

  13. CMU Common Lisp User’s Manual

    DTIC Science & Technology

    1992-07-01

    macro definitions or manual case analysis . Although most Common Lisp implementations support inlinp expan-inn, it herormes a mnor powerful tool with...other than the Jefault (:nearest) can cause unusual behavior, since it will affect rounding done by CoMMon Lisp system code as well as rounding in user...should cause traps. [ossible exceptions are :underflow. :overflow, :inexact, :invalid and :divide-by-zero. Initially all traps except : inexact ar

  14. Radiation Dose Reconstruction U.S. Occupation Forces in Hiroshima and Nagasaki, Japan, 1945-1946.

    DTIC Science & Technology

    1980-08-06

    fell well inside the outer perimeter of the area of near-total destruction (see Figures 1-4), it seems reasonable to assume that virtually all such...e Advmnrred Resna rin & Aptl Iicat inns Co rv ,77!2:C ’onsor ATTN: P . A ris teac Otoera in Ti i n , idswortn lioslital Ctr nFi~irsity if Aolos 1chool

  15. Experimental Polyurethane Foam Roof Systems - II.

    DTIC Science & Technology

    1983-01-01

    hourly temperatures for each day were plotted on graph paper, and areas were measured with a compensating polar planimeter that reads to four digits...INN \\k I, N’. tlir’I’iii V A I \\’A SIurelS42r. K110i tlIe. I ct Ili Solair i imip .\\r nill. Kiw\\\\, tMe. I N I C(I’ 0)1,4 (IC, Ni’rtolk. \\.A ( ( I

  16. Proceedings of the Military Librarians’ Workshop (18th) Held at Fort Hauchuca, Arizona on 10-12 September 1974

    DTIC Science & Technology

    1974-09-12

    in the proceedings. 4R6 OR~ CONTENTS Page Foreword ii Program iv Welcome I Special Command Briefing 3 Workshop Sessions 11 "Some Unwritten History of...Ms. Cathryn Lyon 34 NEW OEVELOPMENTS AT DDC . . . . Mr. Paul Klinefelter 35 Reminiscing . . . . Mr. Ernest DeWald 37 Participants 49 Sponsors of...Talk by Dr. Bruno Rolak, USACC Historian "Some Unwritten History of I Fort Huachuca" 0900-1100 Working Groups Ramada Inn Academic Earl SchwasG General

  17. 4. View to northwest from within Castro Creek Canyon, looking ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. View to northwest from within Castro Creek Canyon, looking up at 'Antique' Building (HABS-CA-2611-C) at left and center, 'Champagne' Building (HABS-CA-2611-D) at right behind redwood trees. View gives indication of steepness of canyon, siting of these two buildings at canyon's edge. - Deetjen's Big Sur Inn, East Side of State Highway 1, Big Sur, Monterey County, CA

  18. Alkylation Induced DNA Repair and Mutagenesis in Escherichia coli.

    DTIC Science & Technology

    1987-11-23

    III (Gates and inn, 1977), Micrococcus luteus UV endo- nuclease (Grossman et al, 1978) and bacteriophage T UV endonuclease (Warner et al, 1980) have DNA...34, Garland Publishing, Inc. New York & London USA. Ather, A., Z. Ahmed and S. Riazxxddin, 1984. Adaptive response of Micrococcus luteus to alkylating...Laval, J., 3. Pierre and F. Laval. 1981. Release of 7-nmthylguanine residues frain alkylated ENA by extracts of Micrococcus luteus and Escherichia

  19. Sweeping and Q Measurements at Elevated Temperatures in Quartz,

    DTIC Science & Technology

    1979-05-01

    unsuccessfully. Copper migration is of interest, since neither the metal nor the bipositive ion will migrate. However, the singly charged cuprous ion ...will migrate even though it is larger than the cupric inn. Thus, the charge on the ion seems to be more important than the ionic size. The role of...litn on.. rao ide It n.....wv and idengify by block nanbor) Sweeping Synthetic quartz Solid state electrolysis a-quartz B Elect rodiffus ion Alkali

  20. Solar hot water system installed at Anderson, South Carolina

    NASA Technical Reports Server (NTRS)

    1978-01-01

    A description is given of the solar energy hot water system installed in the Days Inns of America, Inc., at Anderson, South Carolina. The building is a low-rise, two-story 114-room motel. The solar system was designed to provide 40 percent of the total hot water demand. The collector is a flat plate, liquid with an area of 750 square feet. Operation of this system was begun in November 1977, and has performed flawlessly for one year.

  1. Solar heating and hot water system installed at Cherry Hill, New Jersey

    NASA Technical Reports Server (NTRS)

    1979-01-01

    The solar heating and hot water system installed in existing buildings at the Cherry Hill Inn in Cherry Hill, New Jersey is described in detail. The system is expected to furnish 31.5% of the overall heating load and 29.8% of the hot water load. The collectors are liquid evacuated tube type. The storage system is an above ground insulated steel water tank with a capacity of 7,500 gallons.

  2. Project CHECO Southeast Asia Report. The VNAF Air Divisions Reports on Improvement and Modernization

    DTIC Science & Technology

    1971-11-23

    REQUIRED Prepared by: NTRELEASABLE TO Major David H. Roe Captain Dennis K. YeeTh nor n ed inn Captain Paul D. Knoke dis ; dto frein nation il Captain Drue...the employment of USAF airpower to meet a multitude of requirements. The varied applications of airpower have involved the full spectrum of USAF...Project CHECO, an acronym for Contemporary Historical Examination ofI Current Operations, was established to meet this Air Staff requirement. Managed

  3. Logistics: The Soviets’ Nemesis to Conventional War in Central Europe?

    DTIC Science & Technology

    1989-03-01

    OTIC FILE COPY" AIR WAR COLLEGE InN4 RESEARCH REPORT LOGISTICS: THE SOVIETS’ NEMESIS TO ICONVENTIONAL WAR IN CENTRAL EUROPE? LT COL GILBERT H...explosive, conventional weapons. (8:74) Publications addressing a conventional war in a European scenario have also increased notably. Research ...weaknesses of Soviet logistical capabilities to sustain maneuver war- fare. Accepting the fact that time is a restricting fac- tor to the research

  4. Causal Inferences and the Use of Force: A Critique of Force without War.

    DTIC Science & Technology

    1980-05-01

    nlher arta ,;." - 31 - Final ly, oven if 4pirr-n the a-ire1 it- ~~d1i as qiven, the aith’rs- aire orc~siconallv careless in interpret- inq the data. For...8217 important d if- Feronco-s While, wilel v k𔃽rvii qca ; hOtI 1 he usril to -tost a roo;icae;il rolit ion -hin, attmrt inn to (liscov- Pr what causes

  5. Powder-XRD and (14) N magic angle-spinning solid-state NMR spectroscopy of some metal nitrides.

    PubMed

    Kempgens, Pierre; Britton, Jonathan

    2016-05-01

    Some metal nitrides (TiN, ZrN, InN, GaN, Ca3 N2 , Mg3 N2 , and Ge3 N4 ) have been studied by powder X-ray diffraction (XRD) and (14) N magic angle-spinning (MAS) solid-state NMR spectroscopy. For Ca3 N2 , Mg3 N2 , and Ge3 N4 , no (14) N NMR signal was observed. Low speed (νr  = 2 kHz for TiN, ZrN, and GaN; νr  = 1 kHz for InN) and 'high speed' (νr  = 15 kHz for TiN; νr  = 5 kHz for ZrN; νr  = 10 kHz for InN and GaN) MAS NMR experiments were performed. For TiN, ZrN, InN, and GaN, powder-XRD was used to identify the phases present in each sample. The number of peaks observed for each sample in their (14) N MAS solid-state NMR spectrum matches perfectly well with the number of nitrogen-containing phases identified by powder-XRD. The (14) N MAS solid-state NMR spectra are symmetric and dominated by the quadrupolar interaction. The envelopes of the spinning sidebands manifold are Lorentzian, and it is concluded that there is a distribution of the quadrupolar coupling constants Qcc 's arising from structural defects in the compounds studied.

  6. A Nonlinear Volterra Integrodifferential Equation Describing the Stretching of Polymeric Liquids.

    DTIC Science & Technology

    1981-05-01

    AD-AICO 616 WISCONSIN UNIVNMADISON MATHEMATICS RESEARCH CENTER pis l NONLINEAR VOLTERRA INTEBRODIFFERENTIA4. EQUATION DESCRIBIMS TMIETC (U MAY 61 P ...INTEGRODIFFERENTIAL EQUATION DESCRIBING THE STRETCHIN/ OF POLYMERIC LIQUIDS, P ./Markowich-nd M. Renardy Mathematics Research Center University of Wisconsin...Army Research Office National Si once Foundat inn P . 0. Box 12211 Washinqton, D.C. Or",() Research Triangle Park North Carolina 27709 .- y -6 , I

  7. Height-Gain Atlas for an Elemental Vertical Electric Dipole Above a Flat Earth,

    DTIC Science & Technology

    1981-03-01

    1 3 IDf ~ l *~ 3 ~ N *:1~-’-. 0 .4J~0 N II J ~~n Inn m m ,, V.1 1 ,VV Il IlS S Iml.SlS SP o l -D J Cd .. . . ......... .. .. .. . .. . .. . . Al .?O...10A, because the static and induction fields were neglected. Earth curva - ture limits the maximum practical range. Norton 8 suggests the plane surface

  8. Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging

    DTIC Science & Technology

    2006-11-01

    INDIUM NITRIDE: A NEW MATERIAL FOR HIGH EFFICIENCY, COMPACT, 1550NM LASER-BASED TERAHERTZ SOURCES IN EXPLOSIVES DETECTION AND CONCEALED WEAPONS...nitride (InN) is identified as a promising terahertz (THz) emitter based on the optical and electronic properties of high quality In- and N-face...significant improvements in THz emitters. 1. INTRODUCTION The terahertz region of the electromagnetic spectrum, lying between microwave frequencies

  9. Pulsed terahertz emission from GaN/InN heterostructure

    NASA Astrophysics Data System (ADS)

    Reklaitis, Antanas

    2011-11-01

    Dynamics of the electron-hole plasma excited by the femtosecond optical pulse in wurtzite GaN/InN heterostructure is investigated by Monte Carlo simulations. The GaN/InN heterostructure for pulsed terahertz emission is suggested. The results of Monte Carlo simulations show that the power of terahertz emission from the GaN/InN heterostructure exceeds the power of terahertz emission from the surface of InN by one order of magnitude.

  10. Summary of Meteorological Observations, Surface (SMOS) for Cubi Point, Philippines

    DTIC Science & Technology

    1989-04-01

    8217 0 ’ O N a 01 u vi InN J,1 0fl CU ,L G1N ,C, 0 . In9 x LDN loLIn ’ I. J.Nf N’o((00 � 7’’ , o (7 0 .- OI N N NO . 0 ’ 0’o N f 0r- o ’a0𔃺’o0o’,0

  11. Facility Hygiene Practices Associated with Asbestos Thermal Insulation.

    DTIC Science & Technology

    1980-10-01

    DIV. (’ode IXI, RDT&ELO. Charleston S(’ NAVFA(’ENG(’OM ’WEST DIV. 1(12: 112: AROI’C’. Contracts. ’twentynine Palms (’A: (’ode 0(4B San Bruno. (’A: 09P...NMcchanicshurg PA [V A Smclxcr, KnowxIllk. I crn. NAF PNN() (odc 30)) 11 ( entro. (A U S, \\ER(I INN MiARINI ACAI )) MY Kinli Pin)rt. N) IRcprint ti’ldinii

  12. New Bedford, Some Aspects of the Biogeochemistry of ...

    EPA Pesticide Factsheets

    2012-04-22

    ... 1. pi r E! in in int nil, i'ii 1 prn iinen I. nit :'l i'e nil inn in c Hip I 1 !Ui :r ]t |iin.iii c 111'lnmii'i l: i'i;, r ... 1 HI m nniii'iil ir,:i i.iii i: i: 1:11 i.nim ni.nl EI CM.| II ni! ...

  13. The Role of IL-17 in the Angiogenesis of Rheumatoid Arthritis

    DTIC Science & Technology

    2011-07-01

    Type 17 T helper cells—origins, features and possible roles in rheumatic disease . Nat. Rev. Rheumatol. 5: 325–331. 7. Gabay, C., and I. B. McInnes...2009. The biological and clinical importance of the ‘new generation’ cytokines in rheumatic diseases . Arthritis Res. Ther. 11: 230. 8. Pernis, A. B...17 cells in human disease . Invited review from Journal of Molecular Cell Biology. Page 11 Invited Lectures: 2010

  14. CME Research and Space Weather Support for the SECCHI Experiments on the STEREO Mission

    DTIC Science & Technology

    2014-01-14

    BOSTON COLLEGE INSTITUTE FOR SCIENTIFIC RESEARCH TO: Defense Technical Information Center 8725 John J. Kingman Road, Suite 0944 Fort Belvoir, VA...October 27-29, 2009, Inns and Spas at Mill Falls, Meredith, New Hampshire • SWG #22: 14 April 2011, by telecon The PI attended the final SECCHI...Judge, John Mariska, Harry Warren, Carolus J. Schrijver, David F. Webb, Scott Bailey, and W. Kent Tobiska, New Solar Extreme Ultraviolet Irradiance

  15. 33 CFR 110.72aa - Elizabeth River Spectator Vessel Anchorage Areas, between Norfolk and Portsmouth, Virginia.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... line drawn between Hospital Point at latitude Latitude 36°50′50.5″ North, longitude 76°18′09.0″ West, and the tip of the channelside pier at the Holiday Inn Marina at latitude 36°50′29.5″ North, longitude... the Elizabeth River, bounded by the shore and a line drawn between Hospital Point at latitude...

  16. Experimental Study of Electronic States at Interfaces.

    DTIC Science & Technology

    1987-01-01

    AE h (h )COR ELLU VIH E E V AOTOIh EDSOImhhA E - EEonmonsoE EhhhhEhh EhhhoshEEEEshE Inn 190 ~uM -~11H1 IM~ *22 -us - II 1.1 ’I-huh .25 16III...Center. Cornell UniversiY. Ithaca. New York 14853 (Received 6 August 1984-, revised manuscript received 4 March 1985) Under certain circumstances the

  17. International Workshop on Vibration Isolation Technology for Microgravity Science Applications

    NASA Technical Reports Server (NTRS)

    Lubomski, Joseph F. (Editor)

    1992-01-01

    The International Workshop on Vibration Isolation Technology for Microgravity Science Applications was held on April 23-25, 1991 at the Holiday Inn in Middleburg Heights, Ohio. The main objective of the conference was to explore vibration isolation requirements of space experiments and what level of vibration isolation could be provided both by present and planned systems on the Space Shuttle and Space Station Freedom and by state of the art vibration isolation technology.

  18. Design of Parachute Component Materials from Kevlar 29 and 49

    DTIC Science & Technology

    1976-07-01

    F r F / ,...;. ! F F F 4 4.14:4 ■■ i/’-i TI’!~!" tH.f , H -t - Fiif IM’ .... ■; :" / — 41 1.::: ...... - ’ /^ ’:;: .:::4|::.4...compared to provide sound verification. 88 T^pwfi^i^wp«p^wpii’g*fwf>^*gy^f^i? fiif |^^jypp ipipipipifppiiip^fpiifwp^fl^^p^w 25■mtH+t+mi n inn HUH I H

  19. Report on Follow-up Visit to Ecuador, Part 1

    DTIC Science & Technology

    1961-01-21

    Servicio Cooperativo Interamericano de Salud Pdblica Mr, Milton Lobell, Director of the Servicio Cooperativo Interamericano de Agricultura Mr. David Luscombe, Chief of the Misicn Andina0 ...were familiar with the survey and were present in Ecuador in 1959 include Mr. Harold Conger, Director, Health Servicio , USOM; Mr. Milton Lobeli Director...Agriculture Servicio ; Mr. John Hummel, Head of USOM; Mrs. Leslie Smith, Home Econonrist, USOM; Dr. John J. Kevany, WHO Consultant to INNE;

  20. Development of a Cloud Forecast Scheme for the GL Baseline Global Spectral Model

    DTIC Science & Technology

    1989-12-20

    Figure 6 applies to s1l 1h.-Idecl o1splays of’RH fields). W r i.1 7 I Nt JAINL ~2 -r-H P, Fri:f -’L - - ii- 1.1 WV -, - - .jI~I~~~d ~MVNI, C~ \\H Inn...the exponent, and modest changes in the RHc critica "aiues as given in Table 7. The given changes in these values clearly are not radical; yet

  1. The immiscibility of InAlN ternary alloy

    PubMed Central

    Zhao, Guijuan; Xu, Xiaoqing; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Ji, Zesheng; Meng, Yulin; Wang, Lianshan; Yang, Shaoyan

    2016-01-01

    We have used two models based on the valence force field and the regular solution model to study the immiscibility of InAlN ternary alloy, and have got the spinodal and binodal curves of InAlN. Analyzing the spinodal decomposition curves, we obtain the appropriate concentration region for the epitaxial growth of the InN-AlN pseudobinary alloy. At a temperature most common for the epitaxial growth of InAlN (1000 K), the solubility of InN is about 10%. Then we introduce the mismatch strain item into the Gibbs free energy, and the effect of different substrates is taken into consideration. Considering Si, Al2O3, InN, GaN, AlN as a substrate respectively, it is found that all the five systems are stabilized with the upper critical solution temperature largely reduced. Finally, InN and GaN are potential substrates for In-rich InAlN, while AlN and GaN substrates are recommended in the Al-rich region. Si and Al2O3 may be ideal substrates for thin InAlN film. PMID:27221345

  2. Effect of nitrogen addition on the structural, electrical, and optical properties of In-Sn-Zn oxide thin films

    NASA Astrophysics Data System (ADS)

    Jia, Junjun; Torigoshi, Yoshifumi; Suko, Ayaka; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Shigesato, Yuzo

    2017-02-01

    Indium-tin-zinc oxide (ITZO) films were deposited at various nitrogen flow ratios using magnetron sputtering. At a nitrogen flow ratio of 40%, the structure of ITZO film changed from amorphous, with a short-range-ordered In2O3 phase, to a c-axis oriented InN polycrystalline phase, where InN starts to nucleate from an amorphous In2O3 matrix. Whereas, nitrogen addition had no obvious effect on the structure of indium-gallium-zinc oxide (IGZO) films even at a nitrogen flow ratio of 100%. Nitrogen addition also suppressed the formation of oxygen-related vacancies in ITZO films when the nitrogen flow ratio was less than 20%, and higher nitrogen addition led to an increase in carrier density. Moreover, a red-shift in the optical band edge was observed as the nitrogen flow ratio increased, which could be attributed to the generation of InN crystallites. We anticipate that the present findings demonstrating nitrogen-addition induced structural changes can help to understand the environment-dependent instability in amorphous IGZO or ITZO based thin-film transistors (TFTs).

  3. Infrared study of the absorption edge of {beta}-InN films grown on GaN/MgO structures

    SciTech Connect

    Perez-Caro, M.; Rodriguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

    2010-07-15

    Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that {beta}-InN films have large free-carrier concentrations present (>10{sup 19} cm{sup -3}), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in {beta}-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

  4. Ingression Progression Complexes Control Extracellular Matrix Remodelling during Cytokinesis in Budding Yeast

    PubMed Central

    Foltman, Magdalena; Molist, Iago; Arcones, Irene; Sacristan, Carlos; Filali-Mouncef, Yasmina; Roncero, Cesar; Sanchez-Diaz, Alberto

    2016-01-01

    Eukaryotic cells must coordinate contraction of the actomyosin ring at the division site together with ingression of the plasma membrane and remodelling of the extracellular matrix (ECM) to support cytokinesis, but the underlying mechanisms are still poorly understood. In eukaryotes, glycosyltransferases that synthesise ECM polysaccharides are emerging as key factors during cytokinesis. The budding yeast chitin synthase Chs2 makes the primary septum, a special layer of the ECM, which is an essential process during cell division. Here we isolated a group of actomyosin ring components that form complexes together with Chs2 at the cleavage site at the end of the cell cycle, which we named ‘ingression progression complexes’ (IPCs). In addition to type II myosin, the IQGAP protein Iqg1 and Chs2, IPCs contain the F-BAR protein Hof1, and the cytokinesis regulators Inn1 and Cyk3. We describe the molecular mechanism by which chitin synthase is activated by direct association of the C2 domain of Inn1, and the transglutaminase-like domain of Cyk3, with the catalytic domain of Chs2. We used an experimental system to find a previously unanticipated role for the C-terminus of Inn1 in preventing the untimely activation of Chs2 at the cleavage site until Cyk3 releases the block on Chs2 activity during late mitosis. These findings support a model for the co-ordinated regulation of cell division in budding yeast, in which IPCs play a central role. PMID:26891268

  5. InN/InGaN multiple quantum wells emitting at 1.5 {mu}m grown by molecular beam epitaxy

    SciTech Connect

    Grandal, J.; Pereiro, J.; Bengoechea-Encabo, A.; Fernandez-Garrido, S.; Sanchez-Garcia, M. A.; Munoz, E.; Calleja, E.

    2011-02-07

    This work reports on the growth by molecular beam epitaxy and characterization of InN/InGaN multiple quantum wells (MQWs) emitting at 1.5 {mu}m. X-ray diffraction (XRD) spectra show satellite peaks up to the second order. Estimated values of well (3 nm) and barrier (9 nm) thicknesses were derived from transmission electron microscopy and the fit between experimental data and simulated XRD spectra. Transmission electron microscopy and XRD simulations also confirmed that the InGaN barriers are relaxed with respect to the GaN template, while the InN MQWs grew under biaxial compression on the InGaN barriers. Low temperature (14 K) photoluminescence measurements reveal an emission from the InN MQWs at 1.5 {mu}m. Measurements as a function of temperature indicate the existence of localized states, probably due to InN quantum wells' thickness fluctuations as observed by transmission electron microscopy.

  6. Indomethacin-loaded polymer nanocarriers based on poly(2-hydroxyethyl methacrylate-co-3,9-divinyl-2,4,8,10-tetraoxaspiro (5.5) undecane): preparation, in vitro and in vivo evaluation.

    PubMed

    Nita, Loredana E; Chiriac, Aurica P; Nistor, Manuela T; Tartau, Liliana

    2012-05-01

    The study is focused on the development of copolymers based on poly(2-hydroxyethyl methacrylate-co-3,9-divinyl-2,4,8,10-tetraoxaspiro [5.5]-undecane). The macromolecular compounds were synthesized by dispersion polymerization in the presence of the radical initiator 4,4'-azobis(cyanopentanoic acid) and using sodium lauryl sulfate as tensioactive compound and poly(aspartic acid) (PAS) as protective colloid. PAS presents biocompatibility and biodegradability, and assures the increase of the absorbent character for the new synthesized network, and also, can supplement the hydrogen bonds contributing to the stability of the achieved complexes. The prepared polymeric networks were characterized by FTIR, SEM, and thermogravimetric analyses. The dependence on the pH of the swelling degree equilibrium was also evaluated correlated also with different temperature values. The poly(2-hydroxyethyl methacrylate-co-3,9-divinyl-2,4,8,10-tetraoxaspiro [5.5]-undecane) copolymers were evaluated as matrix for indomethacin (INN) as model drug loaded onto these polymeric networks. The evaluation of the homogeneity distribution of the INN drug in polymeric network was made by near infrared chemical imaging (NIR-CI) and correspondingly statistical analysis. The pharmacokinetic profile was achieved performing the in vitro release of the INN drug from the polymeric network. The data resulted from the in vivo experimental studies, respectively the biocompatibility tests, somatic nociceptive experimental model (Tail flick test) and visceral nociceptive experimental model (Writhing test)-are also reported in the study.

  7. Near surface characteristics of foehn winds

    NASA Astrophysics Data System (ADS)

    Stiperski, Ivana

    2015-04-01

    Downslope windstorms occur commonly in mountainous regions around the world. Their importance is particularly great for air traffic, as well as wind energy, air pollution but also for ice shelf stability in the Antarctica, or deep water formation of the mountainous coasts. In this work we will focus on the foehn type of downslope windstorms and examine it's near surface turbulence characteristics in the Inn Valley, Austria. The foehn in the Inn Valley has been extensively studied throughout the past century, especially in several intensive campaigns. However, the smaller scale turbulence characteristics have only received limited attention. Here we present results from foehn episodes spanning over a year of data. The turbulence measurements at 5 stations within the Inn Valley, Austria as part of the i-Box project are used for the analysis. The general near surface turbulence characteristics of these events are examined and the characteristic scales of dominant transport are determined. Their dependence to horizontal heterogeneity is investigated both on the mesoscale and sub-mesoscale. Special focus is places on the question of energy balance closure during foehn episodes and the influence of advection.

  8. Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.

    PubMed

    Wang, Ping; Yuan, Ying; Zhao, Chao; Wang, Xinqiang; Zheng, Xiantong; Rong, Xin; Wang, Tao; Sheng, Bowen; Wang, Qingxiao; Zhang, Yongqiang; Bian, Lifeng; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Li, Xinzheng; Zhang, Xixiang; Shen, Bo

    2016-02-10

    Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (0001̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

  9. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    DOE PAGES

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; ...

    2012-01-15

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature,more » explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)« less

  10. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    DOE PAGES

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; ...

    2012-01-15

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional{sub to}}0.73 eV with a full width at half maximum of {proportional{sub to}}86 meV. The InN layer displays an S-shape evolution of the emission peak energymore » with temperature, explained in terms of carrier localization. A carrier localization energy of {proportional{sub to}}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional{sub to}}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)« less

  11. Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates.

    PubMed

    Cui, Kai; Fathololoumi, Saeed; Golam Kibria, Md; Botton, Gianluigi A; Mi, Zetian

    2012-03-02

    We report on the achievement of, for the first time, InN/InGaN core/shell nanowire heterostructures, which are grown directly on Si(111) substrates by plasma-assisted molecular beam epitaxy. The crystalline quality of the heterostructures is confirmed by transmission electron microscopy, and the elemental mapping through energy dispersive x-ray spectrometry further reveals the presence of an InGaN shell covering the sidewall and top regions of the InN core. The optical characterizations reveal two emission peaks centered at ∼1685 nm and 1845 nm at 5 K, which are related to the emission from the InGaN shell and InN core, respectively. The InN/InGaN core/shell nanoscale heterostructures exhibit a very high internal quantum efficiency of ∼62% at room temperature, which is attributed to the strong carrier confinement provided by the InGaN shell as well as the nearly intrinsic InN core.

  12. Determination of the surface band bending in In x Ga1-x N films by hard x-ray photoemission spectroscopy.

    PubMed

    Lozac'h, Mickael; Ueda, Shigenori; Liu, Shitao; Yoshikawa, Hideki; Liwen, Sang; Wang, Xinqiang; Shen, Bo; Sakoda, Kazuaki; Kobayashi, Keisuke; Sumiya, Masatomo

    2013-02-01

    Core-level and valence band spectra of In x Ga1-x N films were measured using hard x-ray photoemission spectroscopy (HX-PES). Fine structure, caused by the coupling of the localized Ga 3d and In 4d with N 2s states, was experimentally observed in the films. Because of the large detection depth of HX-PES (∼20 nm), the spectra contain both surface and bulk information due to the surface band bending. The In x Ga1-x N films (x = 0-0.21) exhibited upward surface band bending, and the valence band maximum was shifted to lower binding energy when the mole fraction of InN was increased. On the other hand, downward surface band bending was confirmed for an InN film with low carrier density despite its n-type conduction. Although the Fermi level (EF) near the surface of the InN film was detected inside the conduction band as reported previously, it can be concluded that EF in the bulk of the film must be located in the band gap below the conduction band minimum.

  13. Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application

    NASA Astrophysics Data System (ADS)

    Sarwar, ATM Golam

    Bottom-up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light-emitting diodes (LEDs), lasers, solar cells, and sensors. The aim of this work is to investigate extreme heterostructures, which are impossible or very hard to realize in conventional planar films, exploiting the strain accommodation property of nanowires and engineer their band structure for novel electronic and photonic applications. To this end, in this thesis, III-Nitride semiconductor nanowires are investigated. In the first part of this work, a complete growth phase diagram of InN nanowires on silicon using plasma assisted molecular beam epitaxy is developed, and structural and optical characteristics are mapped as a function of growth parameters. Next, a novel up-side down pendeoepitaxial growth of InN forming mushroom-like microstructures is demonstrated and detail structural and optical characterizations are performed. Based on this, a method to grow strain-free large area single crystalline InN or thin film is proposed and the growth of InN on patterned GaN is investigated. The optimized growth conditions developed for InN are further used to grow InGaN nanowires graded over the whole composition range. Numerical energy band simulation is performed to better understand the effect of polarization charge on photo-carrier transport in these extremely graded nanowires. A novel photodetector device with negative differential photocurrent is demonstrated using the graded InGaN nanowires. In the second part of this thesis, polarization-induced nanowire light emitting diodes (PINLEDs) are investigated. The electrical and optical properties of the nanowire heterostructure are engineered and optimized for ultraviolet and deep ultraviolet applications. The electrical

  14. Band anticrossing effects in highly mismatched semiconductor alloys

    SciTech Connect

    Wu, Junqiao

    2002-01-01

    occurs between localized states and the valence band states. Soft x-ray fluorescence experiments provide direct evidence of the BAC interaction in these systems. In the final chapter of the thesis, I describe and summarize my studies of optical properties of wurtzite InN and related alloys. Early studies performed on InN films grown by sputtering techniques suggested a direct bandgap of ~1.9 eV for this semiconductor. Very recently, high-quality InN films with much higher mobility have become available by using the molecular beam epitaxy growth method. Optical experiments carried out on these samples reveal a narrow bandgap for InN of 0.77 eV, much lower than the previously accepted value. Optical properties of InGaN and InAlN ternaries on the In rich side have also been characterized and are found to be consistent with the narrow bandgap of InN. The bandgap bowing parameters in these alloys were determined. In the context of these findings, the bandgap energies of InGaN and InAlN were found to cover a wide spectral range from the infrared for InN to the ultraviolet for GaN and deep ultraviolet for AlN. The significance of this work is rooted in many important applications of nitride semiconductors in optoelectronics and solar energy conversion devices.

  15. Mountain rescue stretchers: usability trial.

    PubMed

    Hignett, Sue; Willmott, Joseph Wayne; Clemes, Stacy

    2009-01-01

    In the UK mountain rescues are carried out by highly trained volunteers in all weather conditions and at any time of the day/night. They interface with other services when they hand over the casualty to either land or air ambulances. The design of the stretcher is important to the safety of both the volunteers and casualties. This paper reports a usability trial to evaluate the features of mountain rescue stretchers and identify characteristics for future design. Two mountain rescue teams in the English Lake District participated in a five week field experiment. Data were collected using postural analysis with Rapid Entire Body Analysis, Body Part Discomfort Surveys, Rated Perceived Exertion and focus groups to compare the performance of four stretchers: Split Thomas, Ferno Titan, MacInnes mark 6 and MacInnes mark 7. None of the stretchers had an overall advantage, with benefits for some features counterbalanced by disadvantages resulting from others. All the stretchers produced shoulder discomfort with the Split Thomas and MacInnes 6 lowering the postural risks through the use of skids/wheel in the carrying phase. The key design features for future MR stretchers include: reduced unloaded weight (e.g. light weight materials and mesh platforms); undercarriage system to reduce the carrying load; adjustable handles at the front and back positions; flexible carrying system with an optional harness attachment; ease of assembly in adverse environmental conditions; large carrying capacity. It is suggested that military emergency evacuation should be considered in addition to mountain rescue tasks to identify a larger commercial market for development.

  16. [Conflict of interest with industry--a survey of nurses in the field of wound care in Germany, Australia and Switzerland].

    PubMed

    Panfil, Eva-Maria; Zima, Karoline; Lins, Sabine; Köpke, Sascha; Langer, Gero; Meyer, Gabriele

    2014-06-01

    Hintergrund: Pflegende werden zunehmend von der Industrie umworben. Ziel: Erfassung der Einstellungen und des Verhaltens von pflegerischen Wundexpert(inn)en gegenüber der Industrie. Methode: Auf Basis bestehender Instrumente wurde ein standardisierter Fragebogen (39 Items; 5-stufige Likert-Skala) entwickelt, der elektronisch und postalisch an alle pflegerischen Mitglieder der Österreichischen Gesellschaft für vaskuläre Pflege (ÖGvP), der Deutschen Gesellschaft für Wundheilung und Wundbehandlung e. V. (DGfW e. V.) und der Swiss Association for Wound Care (SAfW) versandt wurde. Ergebnisse: Die Stichprobe umfasste 178 Pflegende (75 % Frauen; Alter 27 – 70 Jahre [Median 45]; 0 – 40 Jahre [Median 9] tätig im Wundbereich). Nur etwa jeder vierte der Befragten (23,0 %) hat im vergangenen Jahr nicht am Pharmamarketing teilgenommen. Allgemein wurden kleine Geschenke häufiger angenommen als teure Geschenke. Mehrheitlich werden preiswerte Geschenke, Geschenke zu Ausbildungszwecken und solche, die den Patienten nutzen können, als positiv bewertet. Die Befragten betrachten sich, im Vergleich zu Ärzt(inn)en, mehrheitlich als eher weniger beeinflussbar in ihrem Entscheidungsvermögen. Schlussfolgerungen: Das Verhalten und die Einstellung der Pflegenden sind ambivalent. Das Auftreten von Interessenkonflikten wird teilweise mit dem Wohl der Patient(inn)en begründet. Mangelhafte Kenntnisse über diese Thematik und soziale Erwünschtheit könnten die Ursache für eine unkritische Haltung sein. Für einen kritischeren Umgang mit der Industrie sind Bildungsmaßnahmen und berufsethische Standards notwendig.

  17. The Interruption of Alpine Foehn by a Cold Front. Part I: Observations

    NASA Astrophysics Data System (ADS)

    Gohm, A.; Mayr, G. J.; Darby, L. S.; Banta, R. M.

    2010-09-01

    The propagation of a cold front and its interaction with foehn winds is investigated in an Alpine valley, based on observations collected during the field campaign of the Mesoscale Alpine Programme (MAP) on 6 November 1999. The key instrument of this study is a Doppler lidar that had been operated in the Wipp Valley (Austria). The cold front approached the European Alps from the northwest, became distorted at the mountain barrier and entered the east-west aligned Inn Valley near the town of Innsbruck primarily via two passes. It continued to propagate towards Innsbruck from both valley directions as two separate fronts that eventually collided east of Innsbruck after part of the cold air had entered the adjacent north-south aligned Wipp Valley. In the Inn and Wipp Valley, the front caused the interruption of foehn winds. A synthesis of Doppler lidar measurements with conventional meteorological data, including automatic weather stations and radiosondes, leads to the conclusion that the cold front in the Wipp Valley was an atmospheric density current characterized by an elevated head, a front-relative feeder flow and a typical propagation speed of 7 m s-1. The foehn flow on top of the density current caused strong wind shear and triggered shear-flow instability that led to the formation of a turbulent wake behind the head. As the density current propagated towards the Brenner Pass, it slowed down. The shape of the frontal surface varied in time. Its inclination of about 10"-20" is steeper than previously reported for the Inn Valley but is consistent with other observations of atmospheric density currents. In a follow-up presentation (part 2) this observational study is complemented by high-resolution numerical simulations.

  18. Bias-free lateral terahertz emitters—A simulation study

    SciTech Connect

    Granzner, R. Schwierz, F.; Polyakov, V. M.; Cimalla, V.; Ambacher, O.

    2015-07-28

    The design and performance of bias-free InN-based THz emitters that exploit lateral photocurrents is studied by means of numerical simulations. We use a drift-diffusion model with adjusted carrier temperatures and mobilities. The applicability of this approach is demonstrated by a comparison with results from Monte-Carlo simulations. We consider a simple but robust lateral emitter concept using metal stripes with two different thicknesses with one of them being thin enough to be transparent for THz radiation. This arrangement can be easily multiplexed and the efficiency of this concept has already been demonstrated by experiment for GaAs substrates. In the present study, we consider InN, which is known to be an efficient photo-Dember emitter because of its superior transport properties. Our main focus is on the impact of the emitter design on the emission efficiency assuming different operation principles. Both the lateral photo-Dember (LPD) effect and built-in lateral field effects are considered. The appropriate choice of the metal stripe and window geometry as well as the impact of surface Fermi level pinning are investigated in detail, and design guidelines for efficient large area emitters using multiplexed structures are provided. We find that InN LPD emitters do not suffer from Fermi level pinning at the InN surface. The optimum emission efficiency is found for LPD emitter structures having 200 nm wide illumination windows and mask stripes. Emitter structures in which lateral electric fields are induced by the metal mask contacts can have a considerably higher efficiency than pure LPD emitters. In the best case, the THz emission of such structures is increased by one order of magnitude. Their optimum window size is 1 μm without the necessity of a partially transparent set of mask stripes.

  19. Isotropic-nematic phase equilibria in the Onsager theory of hard rods with length polydispersity.

    PubMed

    Speranza, Alessandro; Sollich, Peter

    2003-06-01

    We analyze the effect of a continuous spread of particle lengths on the phase behavior of rodlike particles, using the Onsager theory of hard rods. Our aim is to establish whether "unusual" effects such as isotropic-nematic-nematic (I-N-N) phase separation can occur even for length distributions with a single peak. We focus on the onset of I-N coexistence. For a log-normal distribution, we find that a finite upper cutoff on rod lengths is required to make this problem well posed. The cloud curve, which tracks the density at the onset of I-N coexistence as a function of the width of the length distribution, exhibits a kink; this demonstrates that the phase diagram must contain a three-phase I-N-N region. Theoretical analysis shows that in the limit of large cutoff, the cloud point density actually converges to zero, so that phase separation results at any nonzero density; this conclusion applies to all length distributions with fatter-than-exponentail tails. Finally, we consider the case of a Schulz distribution, with its exponential tail. Surprisingly, even here the long rods (and hence the cutoff) can dominate the phase behavior, and a kink in the cloud curve and I-N-N coexistence again result. Theory establishes that there is a nonzero threshold for the width of the length distribution above which these long-rod effects occur, and shows that the cloud and shadow curves approach nonzero limits for a large cutoff, both in good agreement with the numerical results.

  20. Invaders in hot water: a simple decontamination method to prevent the accidental spread of aquatic invasive non-native species.

    PubMed

    Anderson, Lucy G; Dunn, Alison M; Rosewarne, Paula J; Stebbing, Paul D

    Watersports equipment can act as a vector for the introduction and spread of invasive non native species (INNS) in freshwater environments. To support advice given to recreational water users under the UK Government's Check Clean Dry biosecurity campaign and ensure its effectiveness at killing a range of aquatic INNS, we conducted a survival experiment on seven INNS which pose a high risk to UK freshwaters. The efficacy of exposure to hot water (45 °C, 15 min) was tested as a method by which waters users could 'clean' their equipment and was compared to drying and a control group (no treatment). Hot water had caused 99 % mortality across all species 1 h after treatment and was more effective than drying at all time points (1 h: χ(2) = 117.24, p < 0.001; 1 day χ(2) = 95.68, p < 0.001; 8 days χ(2) = 12.16, p < 0.001 and 16 days χ(2) = 7.58, p < 0.001). Drying caused significantly higher mortality than the control (no action) from day 4 (χ(2) = 8.49, p < 0.01) onwards. In the absence of hot water or drying, 6/7 of these species survived for 16 days, highlighting the importance of good biosecurity practice to reduce the risk of accidental spread. In an additional experiment the minimum lethal temperature and exposure time in hot water to cause 100 % mortality in American signal crayfish (Pacifastacus leniusculus), was determined to be 5 min at 40 °C. Hot water provides a simple, rapid and effective method to clean equipment. We recommend that it is advocated in future biosecurity awareness campaigns.

  1. Proceedings of the 2011 Space Cryogenics Workshop: "Poised for the Future, Reflecting on the Past"

    NASA Technical Reports Server (NTRS)

    Johnson, W. L. (Editor); Schnell, A. R. (Editor); Huget, L. (Editor)

    2013-01-01

    The 24th Space Cryogenics Workshop was held at the Best Western Coeur d Alene Inn and Conference Center, Coeur d Alene, Idaho, June 8-10, 2011. The workshop was organized and sponsored by NASA Kennedy Space Center and NASA Marshall Space Flight Center, with a theme of "Poised for the Future, Reflecting on the Past." Over 100 scientists and engineers from around the world came together to discuss space applications for cryogenics, renew old acquaintances, and meet new practitioners in the field of space cryogenics.

  2. System Design Plan for a DCS (Defense Communications System) Data Transmission Network.

    DTIC Science & Technology

    1981-07-01

    level multiplexers. The first level multiplexer is the AN/FCC-98, and the second level multiplexer is the CV-3511/ TD 1220. The data trunk through the...device (TED), and the CV 3511/ TD 1220 (second level multiplexer) are Government-owned, but the Internodal transmission facilities are leased. The CV 3511...37,4 s/q W# Vt’ W L LL.0 I-n v 4. to Cl 0. In 0 t Inn 4A 4.0 CC 0- iv EUq W ~ L .. 38 z 77- Data trunks can traverse one transmission link to the

  3. Modified 43XX Steels for High Toughness

    DTIC Science & Technology

    1980-04-01

    AL AMMRC TR 80-20 MODIFIED 43XX STEELS FOR HIGH TOUGHNESS T CS.,•, °x ,•, o o,,o,,,sD T I W4 AftELECTE APRIL 1980 J N.J. Kar, V.F. Zackay and E.R...carried out. Isohra tasomions in these steels resulted inn bbaainni 11-v DI FOR Z 47 RITIOW OF I NOV695 IS OBSOLETE UCASFE SECURITY UCLASSIFIEDINOFTI PAGE...this investigation for Si-modified AISI 4330 steel appear to be superior to those for unmodified AISI 4340 and 300-M steels , whilst the strength-tough

  4. International Atomic Energy Agency specialists meeting on experience in ageing, maintenance, and modernization of instrumentation and control systems for improving nuclear power plant availability

    SciTech Connect

    Not Available

    1993-10-01

    This report presents the proceedings of the Specialist`s Meeting on Experience in Aging, Maintenance and Modernization of Instrumentation and Control Systems for Improving Nuclear Power Plant Availability that was held at the Ramada Inn in Rockville, Maryland on May 5--7, 1993. The Meeting was presented in cooperation with the Electric Power Research Institute, Oak Ridge National Laboratory and the International Atomic Energy Agency. There were approximately 65 participants from 13 countries at the Meeting. Individual reports have been cataloged separately.

  5. Patterning of GaN Crystal Films with Ion Beams and Subsequent Wet Etching

    DTIC Science & Technology

    2000-11-29

    potassium triphosphate (75°C) 0 Lifts off 0 O 0 Nitric/ boric acid (75°C) 0 Lifts off 0 O Lifts off Nitric/ boric / hydrogen peroxide 0...number of acid and basic solutions, performed at room temperature (25°C) unless otherwise noted. 20010426 006 N.C. No.: 80,243 Applicants: Molnar...et al PATENT APPLICATION TABLE I 15 20 25 30 Solution GaN InN AIN InAIN InGaN Oxalic acid (75°C) 0 Lifts off Lifts off Lifts off Lifts off

  6. INM. Integrated Noise Model Version 4.11. User’s Guide - Supplement

    DTIC Science & Technology

    1993-12-01

    newer CFM56 -5-AI engine, and the B747 airplane with the older JT9D-7A engine. 2’ 3 The measured data for the A320 agree extremely well with INM...hwey ite 1S* ArtoV•):)•m:.LXI:)amdto te Ofic of • M~ t mid udet-,, Pngrwa-k No,,•rtt. rf t IO1-1 1 U~wa 1. AGENCY USE ONLY (Leave blank) 2. REPORT DATE 3 ...supplement to INN, Version 3 , User’s Guide - Revision 1 for the Version 3.10 computer software released in June, 1992. The Version 4.11 supplement, prepared

  7. All Prime Contract Awards by State or Country, Place, and Contractor, FY 84. Part 7 (Aberdeen, Maryland - Wrentham, Massachusetts).

    DTIC Science & Technology

    1984-01-01

    0 0 10 10 WO O V CU) LIJN 1If CDON0O 0C)- - -0 0 C 0 N e ~ c0~ 1 00 m INN o -0 co 0ca :e 0 0 -0 0o(D 0 0LU000000m0 0 1-V Nqr . to0 -’. -- 44< -- C...Kf) voo D- :3* 0i 1 0) ~ Nl-1 -~ "I * 0) LD N ~ * - N 0 OD 0 -N N .0 ) ,- N N (K) to -K Nqr I - ir-- CDK) - -- 0- c IK) r- , If) I I) OD N M NT C)) 0

  8. Photoelectrochemical Etching of In(x)Ga(1-x)N

    SciTech Connect

    Cho, H.; Donovan, S.M.; Abernathy, C.R.; Pearton, S.J.; Ren, F.; Han, J.; Shul, R.J.

    1999-01-20

    A comparison of KOH, NaOH and AZ400K solutions for UV photo-assisted etching of undoped and n{sup +} GaN is discussed. The etching is diffusion-limited (E{sub a} < 6kCal {center_dot} mol{sup {minus}1} ) under all conditions and is significantly faster with bias applied to the sample during light exposure. No etching of InN was observed, due to the very high n-type background doping (> 10{sup 20} cm{sup {minus}3}) in the material.

  9. In-Plane Structure of Underpotentially Deposited Copper on Gold (111) Determined by Surface EXAFS (Extended X-Ray Absorption Fine Structure).

    DTIC Science & Technology

    1988-01-28

    D-Al 263 INN-PLANE STRUCTURE OF UNDERPOTENTIALLY DEPOSITED COPPER /. ON GOLD (Iii) DET (U) PUERTO RICO UNIV RIO PIEDRAS DEPT OF PHVS I CS 0 R...051-0776 TECHNICAL REPORT #33 In-Plane Structure of Underpotentially Deposited Copper on Gold (111) Determined by Surface EXAFS by O.R. Melroy*, M.G...Strueture of Underpotentially Deposited Copper on Gold ( 11) determincd hv Surface EXAFS 0. R. Melroy*, N1. G. Samant, G. L. Borges. and J. G. Gordon

  10. Third International Symposium on Magnetic Suspension Technology. Part 2

    NASA Technical Reports Server (NTRS)

    Groom, Nelson J. (Editor); Britcher, Colin P. (Editor)

    1996-01-01

    In order to examine the state of technology of all areas of magnetic suspension and to review recent developments in sensors, controls, superconducting magnet technology, and design/implementation practices, the Third International Symposium on Magnetic Suspension Technology was held at the Holiday Inn Capital Plaza in Tallahassee, Florida on 13-15 Dec. 1995. The symposium included 19 sessions in which a total of 55 papers were presented. The technical sessions covered the areas of bearings, superconductivity, vibration isolation, maglev, controls, space applications, general applications, bearing/actuator design, modeling, precision applications, electromagnetic launch and hypersonic maglev, applications of superconductivity, and sensors.

  11. Third International Symposium on Magnetic Suspension Technology

    NASA Technical Reports Server (NTRS)

    Groom, Nelson J. (Editor); Britcher, Colin P. (Editor)

    1996-01-01

    In order to examine the state of technology of all areas of magnetic suspension and to review recent developments in sensors, controls, superconducting magnet technology, and design/implementation practices, the Third International Symposium on Magnetic Suspension Technology was held at the Holiday Inn Capital Plaza in Tallahassee, Florida on 13-15 Dec. 1995. The symposium included 19 sessions in which a total of 55 papers were presented. The technical sessions covered the areas of bearings, superconductivity, vibration isolation, maglev, controls, space applications, general applications, bearing/actuator design, modeling, precision applications, electromagnetic launch and hypersonic maglev, applications of superconductivity, and sensors.

  12. Continuing to Build a Community Consensus on the Future of Human Space Flight: Report of the Fourth Community Workshop on Achievability and Sustainability of Human Exploration of Mars (AM IV)

    NASA Technical Reports Server (NTRS)

    Thronson, Harley A.; Baker, John; Beaty, David; Carberry, Chris; Craig, Mark; Davis, Richard M.; Drake, Bret G.; Cassady, Joseph; Hays, Lindsay; Hoffman, Stephen J.; Mason, Lee S.

    2016-01-01

    To continue to build broadly based consensus on the future of human space exploration, the Fourth Community Workshop on Achievability and Sustainability of Human Exploration of Mars (AM IV), organized by Explore Mars, Inc. and the American Astronautical Society, was held at the Double Tree Inn in Monrovia, CA., December 68, 2016. Approximately 60 invited professionals from the industrial and commercial sectors, academia, and NASA, along with international colleagues, participated in the workshop. These individuals were chosen to be representative of the breadth of interests in astronaut and robotic Mars exploration.

  13. Workshop on seedling physiology and growth problems in oak plantings (5th) (abstracts). Held in Ames, Iowa on March 4-5, 1992. Forest Service general technical report

    SciTech Connect

    Thompson, J.R.; Schultz, R.C.; Van Sambeek, J.W.

    1993-01-01

    The fifth workshop on seedling physiology and growth problems in oak plantings was held at the Holiday Inn Gateway Center in Ames, Iowa on March 4 and 5, 1992 with more than 45 participants. The workshop continues to serve as an informal forum for researchers to exchange ideas and research results. Papers were divided into four general subject areas: (1) field performance of planted oaks, (2) seedling propagation and production, (3) oak physiology and genetics, and (4) natural and acorn germination regeneration. All abstracts prepared for the workshop are included in the technical report.

  14. Competition in prescription drug markets: the roles of trademarks, advertising, and generic names.

    PubMed

    Feldman, Roger; Lobo, Félix

    2013-08-01

    We take on two subjects of controversy among economists-advertising and trademarks-in the context of the market for generic drugs. We outline a model in which trademarks for drug names reduce search costs but increase product differentiation. In this particular framework, trademarks may not benefit consumers. In contrast, the generic names of drugs or "International Nonproprietary Names" (INN) have unquestionable benefits in both economic theory and empirical studies. We offer a second model where advertising of a brand-name drug creates recognition for the generic name. The monopoly patent-holder advertises less than in the absence of a competitive spillover.

  15. Ernest Orlando Lawrence Awards Ceremony for 2011 Award Winners (Presentations, including remarks by Energy Secretary, Dr. Steven Chu)

    ScienceCinema

    Chu, Steven (U.S. Energy Secretary)

    2016-07-12

    The winners for 2011 of the Department of Energy's Ernest Orlando Lawrence Award were recognized in a ceremony held May 21, 2012. Dr. Steven Chu and others spoke of the importance of the accomplishments and the prestigious history of the award. The recipients of the Ernest Orlando Lawrence Award for 2011 are: Riccardo Betti (University of Rochester); Paul C. Canfield (Ames Laboratory); Mark B. Chadwick (Los Alamos National Laboratory); David E. Chavez (Los Alamos National Laboratory); Amit Goyal (Oak Ridge National Laboratory); Thomas P. Guilderson (Lawrence Livermore National Laboratory); Lois Curfman McInnes (Argonne National Laboratory); Bernard Matthew Poelker (Thomas Jeffereson National Accelerator Facility); and Barry F. Smith (Argonne National Laboratory).

  16. Computer Modeling of Direct Path, Backscattered Bottom Reverberations for the Acoustic Reverberation Special Research Program (ARSRP)

    DTIC Science & Technology

    1990-10-01

    34 .. .:. ..... . . ... H3Od KV38 F-0 (cc .ILI 0 L) C7C) LS..i~i *Q p a 5 -- ,s g v -J -J C)c Z1 E~ KV3 K’o - S.- ’ " , ’ , ~~.. .... ..... . ......., , -inn *Q o c "<g - aa...a -IC) | *."I I I I!-) Sa ao <o o3~ INY3U U) CQC CC) -C0 r- 0 - CD C> CC CC)) ZJ3M~d KV3 ct: Loo 00 00 CE~ ~ ~ ..... 43~ NV3 C’,) I 0 I

  17. Initial testing of the tritium systems at the Tokamak Fusion Test Reactor

    SciTech Connect

    Anderson, J.L.; Sissingh, R.A.P.; Gentile, C.A.; Rossmassler, R.L.; Walters, R.T.; Voorhees, D.R.

    1993-11-01

    The Tokamak Fusion Test Reactor (TFTR) at Princeton will start its D-T experiments in late 1993, introducing and operating the tokamak with tritium in order to begin the study of burning plasma physics in D-T. Trace tritium injection experiments, using small amounts of tritium will begin in the fall of 1993. In preparation for these experiments, a series of tests with low concentrations of tritium inn deuterium have been performed as an initial qualification of the tritium systems. These tests began in April 1993. This paper describes the initial testing of the equipment in the TFTR tritium facility.

  18. Strain and Quantum Dots Manipulation in Nitride Compounds for Opto-electronic Devices

    DTIC Science & Technology

    2008-02-15

    long wavelength (573–601 nm) InGaN /GaN multiple quantum well light emitting diodes ( LEDs ) grown by metal organic chemical vapor deposition. These...avoid the disintegration of the InGaN quantum wells with high InN content. A redshift is observed for both the green and yellow LEDs upon decreasing...Development of Yellow and White LED’s Using InGaN -based Multi- Quantum Well Structures” P. T. Barlettaa, E. A. Berkmana, A. M. Emarab, M. J

  19. Plastic Optoelectronics: Injection Lasers Fabricated from Soluble Semiconducting Polymers

    DTIC Science & Technology

    2002-01-01

    1 (b) 3 with 2-( 4 -biphenylyl)-5-( 4 --tert- butylphcnyl)-i,3,4- oxadiazole [PBD. Fig. I(c)]. Because of the strong spin-orbit coupling of the...DV TiO7(Slnm)F Insulator -2x10 i P == / n-Si -3o ~ -2 0 - 1 -2 - 3 . 4 -5 1 V.. (V) L=5 Am, W= 1000 jim, 0i= .01 cmN-s Note that for VG 5V, the source...3711/ 3 /$19.00 3711 © 2002 American Institute of Physics S5 ~n =~ 1 ii innIENT ALLS ELSEVIER Synthetic Metals 119 (2001) 619-620

  20. 41. THE BEAR PIT (OLD SIDE DINING ROOM). THE ETCHINGS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    41. THE BEAR PIT (OLD SIDE DINING ROOM). THE ETCHINGS ON THE CEILING BEAMS AND COLUMNS OF PARK WILDLIFE ARE ORIGINAL TO THE OLD SIDE DINING ROOM. THE SIDE DINING ROOM WAS DESIGNED AND BUILT BY ROBERT REAMER IN 1927. IN 1962 WHEN IT WAS CONVERTED INTO THE BEAR PIT A WALL WAS ADDED BETWEEN THE THREE COLUMNS THAT SEPARATE THIS ROOM FROM THE MAIN DINING ROOM. THE ORIGINAL BEAR PIT ETCHINGS DEPICTING BEARS TENDING BAR AND PLAYING THE PIANO WERE MOUNTED ON THE WALL BETWEEN THE COLUMNS. - Old Faithful Inn, 900' northeast of Snowlodge & 1050' west of Old Faithful Lodge, Lake, Teton County, WY

  1. Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes

    PubMed Central

    Yang, J.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Li, X.; Liang, F.; Liu, S. T.; Zhang, L. Q.; Yang, H.

    2017-01-01

    Three series of samples with different NH3 flow rate are grown and the optical and structural properties are investigated. It is found that apart from a positive effect on keeping a high partial pressure of nitrogen to enhance indium incorporation, NH3 may also play a negative effect on indium incorporation during InGaN growth. Especially, when temperature is relatively high, the hydrogen generated from the dissociation of NH3 may suppress the chemical reaction which produces InN, leading to a reduced indium incorporation efficiency during the InGaN layer growth. PMID:28322286

  2. Proceedings of the 2013 MidSouth Computational Biology and Bioinformatics Society (MCBIOS) Conference.

    PubMed

    Wren, Jonathan D; Dozmorov, Mikhail G; Burian, Dennis; Kaundal, Rakesh; Perkins, Andy; Perkins, Ed; Kupfer, Doris M; Springer, Gordon K

    2013-01-01

    The tenth annual conference of the MidSouth Computational Biology and Bioinformatics Society (MCBIOS 2013), "The 10th Anniversary in a Decade of Change: Discovery in a Sea of Data", took place at the Stoney Creek Inn & Conference Center in Columbia, Missouri on April 5-6, 2013. This year's Conference Chairs were Gordon Springer and Chi-Ren Shyu from the University of Missouri and Edward Perkins from the US Army Corps of Engineers Engineering Research and Development Center, who is also the current MCBIOS President (2012-3). There were 151 registrants and a total of 111 abstracts (51 oral presentations and 60 poster session abstracts).

  3. Report on Functional Design Specification for the Automated Alphanumeric Data Entry System,

    DTIC Science & Technology

    1984-01-30

    essentially the same conditions and using the same techniques - a systematic presentation of intersecting coordinate lines on a flat t-urface upon which...6.1.2 Interactive - Selective Names Capture 69 This scenario would utilize an interactive edit station in essentially the same manner as above, except...lrlr(;rn|if. lim H, IUOIUTH. iiit«lri|>rniiiu| .u|n. •IIMI-I. itiMltirgrmin«! |.I|M- Inns, wnii-i. WI’HM ( oil , I;,.M, mill, nie.) IIIHI

  4. Ernest Orlando Lawrence Awards Ceremony for 2011 Award Winners (Presentations, including remarks by Energy Secretary, Dr. Steven Chu)

    SciTech Connect

    Chu, Steven

    2012-05-21

    The winners for 2011 of the Department of Energy's Ernest Orlando Lawrence Award were recognized in a ceremony held May 21, 2012. Dr. Steven Chu and others spoke of the importance of the accomplishments and the prestigious history of the award. The recipients of the Ernest Orlando Lawrence Award for 2011 are: Riccardo Betti (University of Rochester); Paul C. Canfield (Ames Laboratory); Mark B. Chadwick (Los Alamos National Laboratory); David E. Chavez (Los Alamos National Laboratory); Amit Goyal (Oak Ridge National Laboratory); Thomas P. Guilderson (Lawrence Livermore National Laboratory); Lois Curfman McInnes (Argonne National Laboratory); Bernard Matthew Poelker (Thomas Jeffereson National Accelerator Facility); and Barry F. Smith (Argonne National Laboratory).

  5. The anharmonic phonon decay rate in group-III nitrides

    NASA Astrophysics Data System (ADS)

    Srivastava, G. P.

    2009-04-01

    Measured lifetimes of hot phonons in group-III nitrides have been explained theoretically by considering three-phonon anharmonic interaction processes. The basic ingredients of the theory include full phonon dispersion relations obtained from the application of an adiabatic bond charge model and crystal anharmonic potential within the isotropic elastic continuum model. The role of various decay routes, such as Klemens, Ridley, Vallée-Bogani and Barman-Srivastava channels, in determining the lifetimes of the Raman active zone-centre longitudinal optical (LO) modes in BN (zincblende structure) and A1(LO) modes in AlN, GaN and InN (wurtzite structure) has been quantified.

  6. Marine Gas Turbine Modeling for Modern Control Design.

    DTIC Science & Technology

    1986-06-01

    MOZO E-4ZW𔃺a" ~ C E- 0F.ZwEi.E- -inn4= 974WE.)O -4L c E-4 Ha W: WZ ( 0 ~ ) 0 "a . 4W< W .wz z 00 w 4 *0 = 0 ::) O=W( 0 0 C.M 0 =0UU n.X0 - Z -O)0 uo...Models/e/Dian criteria, AlfAVL-TR- 7B--74_,1976.6q 2. Merril,W., Lehtinen, B., Zeller J. , TheRole of Moo Theory in the Des3n of Coro fOrft Journal o

  7. DOT/FAA Human Factors Workshop on Aviation (5th). Transcript Held at Oklahoma City, Oklahoma on 7-8 July 1981.

    DTIC Science & Technology

    1982-05-01

    1111" 1.0-2 Au11 I 12.0 NATIONAL BUREAU Of STANDARDS-1963-A -, b. e" • -O’-.."..’,o"- *-.. -,b -. ! . . ... .. ... °... tq . .,M ,..-o...TRANSPORTATION FEDERAL AVIATION ADMINISTRATION-’ Accession For NTTS GRA& I . . DTIC TAB Dv il~ ’ t .inn .. yCodes . and/or Dist !Special-’ Presented at the Mike...Fifth City, Oklahoma, on July 7-9, 1981. The Sixth Human Factors Workshop was held at the same facility on July 7 and 8, 1981./ I TABLE OF CONTENTS

  8. Evaluation of Alternative Procedures for Atmospheric Absorption Adjustments during Noise Certification. Volume I. Analyses and Results

    DTIC Science & Technology

    1980-10-01

    ue asý redo urei byIN.6 t eillof 1.2 inn above Lthe ground surface.te reclin ~ ~ ~ ~ 1 ofeietso pc’i xI I’ AR 36 were’. Iot erpreted , as all[owed...Report FAA-RD-71-99 (November 1971). 25. ’JB’ McCollough and Harold C. True, "Effect of Temperature and Humidity on Aircraft Noise Propagation...34 Federal Aviatior, Administration Report FAA-RD-75-100 (September 1975). 26. Harold C. True, "The Layered Weather Correction for Flyover Noise Testing

  9. Simple and sensitive method for the determination of chlorpheniramine maleate in human plasma using liquid chromatography-mass spectrometry.

    PubMed

    Takagaki, Takeshi; Matsuda, Michiaki; Mizuki, Yasuyuki; Terauchi, Yoshiaki

    2002-09-05

    A convenient liquid chromatographic-single quadrupole mass spectrometric (LC-MS) method was developed and validated for the determination of chlorpheniramine maleate (INN name: chlorphenamine) in human plasma. The method had advantages of a single liquid-liquid extraction with diethylether and high sensitivity. The linearity was also excellent over the concentration range of 0.52-20.8 ng/ml of chlorpheniramine maleate. The intra- and inter-day precision and accuracy ranged between 0.0 and 13.9%, showing a good reproducibility. This developed method was successfully applied to analysis of chlorpheniramine maleate in clinical studies.

  10. Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes

    NASA Astrophysics Data System (ADS)

    Yang, J.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Li, X.; Liang, F.; Liu, S. T.; Zhang, L. Q.; Yang, H.

    2017-03-01

    Three series of samples with different NH3 flow rate are grown and the optical and structural properties are investigated. It is found that apart from a positive effect on keeping a high partial pressure of nitrogen to enhance indium incorporation, NH3 may also play a negative effect on indium incorporation during InGaN growth. Especially, when temperature is relatively high, the hydrogen generated from the dissociation of NH3 may suppress the chemical reaction which produces InN, leading to a reduced indium incorporation efficiency during the InGaN layer growth.

  11. An interview with Caroline Dean.

    PubMed

    Dean, Caroline; Vicente, Catarina

    2015-08-15

    Caroline Dean is a plant biologist based at the John Innes Centre in Norwich, UK. She helped to establish Arabidopsis as a model plant organism, and has worked for many years on the epigenetic mechanisms that regulate vernalisation, the process by which plants accelerate their flowering after periods of prolonged cold. We met Caroline at the recent Spring Meeting of the British Society for Developmental Biology. We asked her about her career, her thoughts on the plant field and being awarded this year's FEBS EMBO Women in Science Award.

  12. Pseudomorphic Semiconducting Heterostructures from Combinations of AlN, GaN and Selected SiC Polytypes: Theoretical Advancement and Its Coordination with Experimental Studies of Nucleation, Growth, Characterization and Device Development

    DTIC Science & Technology

    1992-06-01

    solid solution as well as InN have been successfully deposited using a modified gas source MBE system. Application of single layers of the AlxGal-xN... solid solution or pure GaN films as UV light photon detectors has been achieved. The gain exhibited by these detectors at a forward voltage of 5V was...500uA and 10 mA for the solid solution films deposited on sapphire and alpha(6H)-SiC substrates, respectively. The GaN film deposited on sapphire

  13. Besieged by devils--thoughts on possession and possession states.

    PubMed

    Prins, H

    1992-07-01

    Aspects of possession are reviewed in historical, cultural and clinical contexts. Consideration is given to differential diagnosis and management. It is suggested that a multi-disciplinary approach is required for a condition that stands at the boundaries of psychiatry. Two quotations from Elizabethan playwrights are relevant to the theme of this paper: 'Beware you do not conjure up a spirit you cannot lay' Ben Johnson, The New Inn (Act III, Scene ii) 'Farewell the tranquil mind: farewell content.' Shakespeare, Othello (Act III, Scene iii).

  14. Development of Advanced Ill-Nitride Materials

    DTIC Science & Technology

    2008-09-24

    doping, p-n junctions, and InGaN/InN quantum well structures for terahertz emitters; and (iii) develop AlInN materials lattice-matched to GaN for... GaN and InN- based materials by molecular beam epitaxy (MBE). Work is focused on three areas: (i) extend on our pioneering work on high...temperature nitrogen-rich growth of GaN , where we have demonstrated a new growth space for realizing high quality GaN materials and devices including world

  15. Summary of proceedings: Oklahoma and Texas wind energy forum, April 2-3, 1981

    SciTech Connect

    Nelson, S. C.; Ball, D. E.

    1981-06-01

    The Wind Energy Forum for Oklahoma and Texas was held at the Amarillo Quality Inn in Amarillo, Texas on April 2-3, 1981. Its purpose was to bring together the diverse groups involved in wind energy development in the Oklahoma and Texas region to explore the future commercial potential and current barriers to achieving this potential. Major topics of discussion included utility interconnection of wind machines and the buy-back rate for excess power, wind system reliability and maintenance concerns, machine performance standards, and state governmental incentives. A short summary of each presentation is included.

  16. Arctic Ice Dynamics Joint Experiment 1975-1976. Physical Oceanography Data Report, Salinity, Temperature and Depth Data, Camp Blue Fox. Volume II.

    DTIC Science & Technology

    1980-02-01

    LISTING PARAMETERS I DEPTH Depth in meters TEMP Temperature in degrees C PTEMP Potential temperature in degree C SALIN Salinity in parts per thousand SIG ...T Sigma-t density where: I density (p) - 1.0 + (( Sig T) *1000.0) SPVOL Specific volume anomaly (x 10-5 cm3/gm) DYNHT Dynamic height (dynamic meters...to LM b. a w ewe%- ww re mOOc 4" o 0.NWmotvviiOf wt 00 f4Crfl ft -wm o.e. &*1 NO P..w N N o%9 a in - - -da inN 4p m a - U . .......0...V N m

  17. Aviation Safety/Automation Program Conference

    NASA Technical Reports Server (NTRS)

    Morello, Samuel A. (Compiler)

    1990-01-01

    The Aviation Safety/Automation Program Conference - 1989 was sponsored by the NASA Langley Research Center on 11 to 12 October 1989. The conference, held at the Sheraton Beach Inn and Conference Center, Virginia Beach, Virginia, was chaired by Samuel A. Morello. The primary objective of the conference was to ensure effective communication and technology transfer by providing a forum for technical interchange of current operational problems and program results to date. The Aviation Safety/Automation Program has as its primary goal to improve the safety of the national airspace system through the development and integration of human-centered automation technologies for aircraft crews and air traffic controllers.

  18. Research and Modeling of Supervisory Control Behavior. Report of a Workshop

    DTIC Science & Technology

    1984-01-01

    that itself closes a control loop (i.e., interconnects) through external sensors, effectors, and the task environment . Another form of supervisory...ultimately in the real environment of automated machine systems. A common view of supervisory control, i.e., a framework for research and for...a I control loop (i.e. interconnects) through external sensors, effectors, and the task environment (Figure I). S~8 3SNUdX3 INNE1N83AOO IV (j33fO

  19. Structural Acoustic UXO Detection and Identification in Marine Environments - Interim Report for SERDP MR-2103 Follow-On

    DTIC Science & Technology

    2015-07-30

    seven include the rock (T2), the 55 gallon water filled drum (T3), the 5:1 aspect telephone pole section (T5), the panel (T10 or CP), the 2:1 aspect...telephone pole section (T15), the cement block (T18), and the tire (T19). The proud and buried targets in the target field are listed and labelled in...N1 5inch Rocket nose-up 60o T2 Rock T15 2:1 Aspect Phone Pole Section N2 5inch Rocket nose-up 30o T3 55 Gallon Filled Drum T17 2 ft Aluminum Cylinder

  20. The Armed Forces Casualty Assistance Readiness Enhancement System (CARES): Design for Flexibility

    DTIC Science & Technology

    2006-06-01

    Haiti, and as a software engineer for COMBATxxI, the US Army’s future brigade and below analytical model for the 21 "t Century. iv Acknowledgements...transparency (does it make it clearer for the CAO and family members?); and "* Implementation costs (will it require added equipment, software , training...Mling to do e.,ytlin yo, ;ýt h I n inn’t I do not -k, po-- 0 ""ýfo ,’-d, Keep in nod the gol -, Do yen, b-t t 0 un’ NOD !net VIP, -y Ik D end It o o

  1. Effects of High Positive Pressure Breathing and Anoxia

    DTIC Science & Technology

    2007-11-02

    pressure in the chamber drops , there is a corresponding drop in pressure in the reference CONFIDENTIAL 26 Engineering Division Memorandum Report No... drop technique. The remaining details of technique corresponded to those used in ■ I ii 111 inn «in 111 imiwiiiiin »i.Ljyii i m.ijii...recumbent subjects of 6/10 cc. of 1/500 adrenalin in peanut oil , followed in 15 minutes by 1/10 oc. doses of 1/1000 adrenalin subcutaneouely in

  2. Orthogonal and Non-Orthogonal Tight Binding Parameters for III-V Semiconductors Nitrides

    NASA Astrophysics Data System (ADS)

    Martins, A. S.; Fellows, C. E.

    2016-12-01

    A simulated annealing (SA) approach is employed in the determination of different tight binding (TB) sets of parameters for the nitride semiconductors AlN, GaN and InN, as well their limitations and potentialities are also discussed. Two kinds of atomic basis set are considered: (i) the orthogonal sp 3 s∗ with interaction up to second neighbors and (ii) a spd non-orthogonal set, with the Hamiltonian matrix elements calculated within the Extended Hückel Theory (EHT) prescriptions. For the non-orthogonal method, TB parameters are given for both zincblend and wurtzite crystalline structures.

  3. Speculations on the spatial setting and temporal evolution of a fjord-style lake

    NASA Astrophysics Data System (ADS)

    Sarnthein, M.; Spötl, C.

    2012-04-01

    The Inn Valley, a classical region of Quaternary research in the Alps, is bordered by terraces that extend over almost 70 km and record an ancient lake with a lake level near 750-830 m above sea level (a.s.l.), about 250-300 m above the modern valley floor. Over large distances, the terrace sediments consist mainly of laminated "Banded Clays", above ~750 m a.s.l. overlain by glaciofluvial gravel and finally, by tills that record the Upper Würmian ice advance of Marine Isotope Stage (MIS) 2. In the (former) clay pit of Baumkirchen this boundary forms the Alpine type locality for the onset of the Upper Würmian, well supported by 14C-based age control first established by Fliri (1971). On the basis of a recently cored sediment section at Baumkirchen, the >200 m thick "Banded Clays" store a continuous, largely undisturbed, highly resolved, and widely varved climatic archive of MIS 3. Major unknowns concern the location and origin of dams that may have barred the vast and deep Inn Valley lake. We discuss potential linkages to the pattern of moraines and ice advance of MIS 4 glaciers, which was less prominent than during MIS 2, thus leading to a distinct east-west segment¬ation of the run-off systems in Tyrol. East of Imst, for example, the lake was possibly barred by both a rock sill reaching up to 830 m a.s.l. and a lateral moraine deposited by an Ötz Valley glacier. 80 km further east, a lateral moraine of a glacier advancing from the Ziller Valley may have barred the ancient Inn Valley lake to the east. The final rapid coarsening of clastic lake sediments at the end of MIS 3 is widely ascribed to major climatic deter¬ioration. However, the MIS 3-2 boundary was linked to an only modest change of global climates and accordingly, different forcings may be considered. In turn, the rapid coarsening may document a date, when the Central Alpine glaciers had already filled the basin of Imst to the west of the Inn Valley lake. This ice mass may have forced the melt

  4. Strong circular photogalvanic effect in ZnO epitaxial films

    SciTech Connect

    Zhang, Q.; Wang, X. Q.; Yin, C. M.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K.

    2011-12-23

    A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

  5. Strong circular photogalvanic effect in ZnO epitaxial films

    NASA Astrophysics Data System (ADS)

    Zhang, Q.; Wang, X. Q.; Yin, C. M.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K.

    2011-12-01

    A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

  6. Strong circular photogalvanic effect in ZnO epitaxial films

    NASA Astrophysics Data System (ADS)

    Zhang, Q.; Wang, X. Q.; Yin, C. M.; Xu, F. J.; Tang, N.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K.; Ishitani, Y.; Yoshikawa, A.

    2010-07-01

    We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

  7. Control of Disease Recurrence by Tumor-Infiltrating T Cells in Ovarian Cancer

    DTIC Science & Technology

    2010-03-01

    Cresswell J, WongWK, Seymour K, Charnley RM, Kirby JA. T cell adhesion and cytolysis of pancreatic cancer cells: a role for E-cadherin in immunotherapy? Br J...unstable sporadic colorectal cancer. Eur J Cancer 2003;39:469–75. [12] Cresswell J, Robertson H, Neal DE, Griffiths TR, Kirby JA. Distribution of...Experimental Medicine 188: 1485-1492. 47. Gracie JA, Robertson SE, McInnes IB (2003) Interleukin-18. J Leukoc Biol 73: 213- 224. 48. Nelson BH

  8. 1.55 micro m In(Ga)N Nanowire Lasers on Silicon

    DTIC Science & Technology

    2012-08-01

    the origins of which have remained a subject of intense debate . The lack of intrinsic InN, the uncontrolled surface charge properties, and the...gas (2DEG) at the grown surfaces of both thin film and nanowire structures, the origins of which have remained a subject of intense debate . For...tube cavities, a U- shaped mesa , first defined by etching up to the In0.81Ga0.19As0.41P0.59 layer using HCl:HNO3:H2O (1:2:1) solution. Subsequently

  9. Device Processing Improvements in III-Nitrides

    DTIC Science & Technology

    2007-11-02

    Engineering University of Florida Gainesville, FL 32611 [gEGQUAiai’i UtSSWJO&\\ PROGRAM ACCOMPLISHMENTS Etching Wet Etching Only molten salts such as KOH...depleted sample. These results indicate that at temperatures where fast etch rates occur, the electrons in the n-type sample are part of the chemical...plasma composition and ion density in ICl/Ar plasma chemistries. Very fast etch rates were achieved for GaN, InN and InGaN in ICl/Ar chemistries. At

  10. The World Health Organization's role and future plans in laboratory standardization.

    PubMed

    Heuck, C C

    1993-01-01

    WHO is monitoring health care and the status of health of the population in each of its member states. The statistics provides valuable information for the comparison of the effectiveness of different health systems. As part of its global responsibility on health WHO issues international reference materials (IRMs), assigns international nonproprietary names for therapeutics (INNs), publishes guidelines for good manufacturing practice (GMP) and good laboratory practice (GLP) and, in collaboration with international professional organizations, makes recommendations towards achieving global harmonization of clinical laboratory investigations.

  11. Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes.

    PubMed

    Yang, J; Zhao, D G; Jiang, D S; Chen, P; Zhu, J J; Liu, Z S; Liu, W; Li, X; Liang, F; Liu, S T; Zhang, L Q; Yang, H

    2017-03-21

    Three series of samples with different NH3 flow rate are grown and the optical and structural properties are investigated. It is found that apart from a positive effect on keeping a high partial pressure of nitrogen to enhance indium incorporation, NH3 may also play a negative effect on indium incorporation during InGaN growth. Especially, when temperature is relatively high, the hydrogen generated from the dissociation of NH3 may suppress the chemical reaction which produces InN, leading to a reduced indium incorporation efficiency during the InGaN layer growth.

  12. Gas Bubble Growth in Muddy Sediments

    DTIC Science & Technology

    2000-09-30

    the ebullitive flux of methane, an important “greenhouse gas”, to the atmosphere. OBJECTIVES The immediate objective is a working model for the growth...OMB control number. 1. REPORT DATE SEP 2000 2. REPORT TYPE 3. DATES COVERED 00-00-2000 to 00-00-2000 4. TITLE AND SUBTITLE Gas Bubble Growth in...N is the porosity, D is the tortuosity-corrected diffusivity, cg is the concentration of gas in the bubble, S is the local rate of methanogenesis, R1

  13. The stimulants and hallucinogens under consideration: a brief overview of their chemistry and pharmacology.

    PubMed

    Harris, L S

    1986-06-01

    The substances under review are a heterogeneous set of compounds from a pharmacological point of view, though many have a common phenylethylamine structure. Variations in structure lead to marked changes in potency and characteristic action. The introductory material presented here is meant to provide a set of chemical and pharmacological highlights of the 28 substances under consideration. The most commonly used names or INN names, Chemical Abstract (CA) names and numbers, and elemental formulae are provided in the accompanying figures. This provides both some basic information on the substances and a starting point for the more detailed information that follows in the individual papers by contributors to the symposium.

  14. Sign change of the flux flow hall effect in HTSC

    SciTech Connect

    Feigel`man, M.V.; Geshkenbein, V.B.; Larkin, A.I. ||; Vinokur, V.M.

    1994-05-01

    A novel mechanism for the sign change of the Hall effect in flux flow region is proposed. The difference {delta}n between the electron density at the center of the vortex core and that far outside the vortex causes the additional contribution to the Hall conductivity {delta}{sigma}{sub xy} = {delta}nec/B. This contribution can be bigger than the conventional one inn the dirty case {Delta}(T){tau} < 1. If the electron density inside the core exceeds the electron density outside the core the double sign change may occur as a function of temperature and magnetic field.

  15. Thermodynamic considerations of the vapor phase reactions in III–nitride metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Sekiguchi, Kazuki; Shirakawa, Hiroki; Chokawa, Kenta; Araidai, Masaaki; Kangawa, Yoshihiro; Kakimoto, Koichi; Shiraishi, Kenji

    2017-04-01

    We analyzed the metal organic vapor phase epitaxial growth mechanism of the III–nitride semiconductors GaN, AlN, and InN by first-principles calculations and thermodynamic analyses. In these analyses, we investigated the decomposition processes of the group III source gases X(CH3)3 (X = Ga, Al, In) at finite temperatures and determined whether the (CH3)2GaNH2 adduct can be formed or not. The results of our calculations show that the (CH3)2GaNH2 adduct cannot be formed in the gas phase in GaN metal organic vapor phase epitaxy (MOVPE), whereas, in AlN MOVPE, the formation of the (CH3)2AlNH2 adduct in the gas phase is exclusive. In the case of GaN MOVPE, trimethylgallium (TMG, [Ga(CH3)3]) decomposition into Ga gas on the growth surface with the assistance of H2 carrier gas, instead of the formation of the (CH3)2GaNH2 adduct, occurs almost exclusively. Moreover, in the case of InN MOVPE, the formation of the (CH3)2InNH2 adduct does not occur and it is relatively easy to produce In gas even without H2 in the carrier gas.

  16. Defects in nitride-based semiconductors probed by positron annihilation

    NASA Astrophysics Data System (ADS)

    Uedono, A.; Sumiya, M.; Ishibashi, S.; Oshima, N.; Suzuki, R.

    2014-04-01

    Point defects in InxGa1-xN grown by metal organic chemical vapor deposition were studied by a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for InxGa1-xN (x = 0.08 and 0.14) showed that vacancy-type defects were introduced with increasing InN composition. From comparisons between coincidence Doppler broadening spectra and the results calculated using the projector augmented-wave method, the major defect species was identified as the complexes between a cation vacancy and nitride vacancies. The concentration of the defects was found to be suppressed by Mg doping. An effect of Mg-doping on the positron diffusion properties in GaN and InN was also discussed. The momentum distribution of electrons at the InxGa1-xN/GaN interface was close to that in defect-free GaN or InxGa1-xN, which was attributed to the localization of positrons at the interface due to the electric field caused by polarizations.

  17. Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Bejtka, K.; Edwards, P. R.; Martin, R. W.; Fernandez-Garrido, S.; Calleja, E.

    2008-10-01

    A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565-660 deg. C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fractions in the ranges of 4%-30% and 0%-16%, respectively. Composition measurements show the effect of decreasing temperature to be an increase in the incorporation of InN, accompanied by a small but discernible decrease in the ratio of GaN to AlN mole fractions. The incorporation of In is also shown to be significantly increased by decreasing the Al mole fraction. Optical emission peaks, observed by cathodoluminescence mapping and by photoluminescence, provide further information on the epilayer compositions as a function of substrate temperature, and the dependencies of peak energy and linewidth are plotted.

  18. Looking back at Waldo: oculomotor inhibition of return does not prevent return fixations.

    PubMed

    Smith, Tim J; Henderson, John M

    2011-01-04

    Inhibition of Return (IOR) is a difficulty in processing stimuli presented at recently attended locations. IOR is widely believed to facilitate foraging of a visual scene by decreasing the probability that gaze will return to previously fixated locations. However, there is a lack of clear evidence in support of the foraging facilitator hypothesis during scene search. The original R. M. Klein and W. J. MacInnes' (1999) Where's Waldo study reported a forward bias in the distribution of fixations that was taken as evidence for the foraging facilitator hypothesis. The present study was designed to replicate R. M. Klein and W. J. MacInnes' (1999) but include detailed analysis of fixation distributions in order to test the precise predictions of the foraging facilitator hypothesis. The results indicate that latencies of saccades returning to 1-back (and possibly 2-back) locations during visual search are elevated. However, there is no evidence that the probability of returning to these locations is significantly less than control locations. Eye movement behavior during search of visual scenes does not support the view that IOR facilitates foraging.

  19. Fermi level stabilization energy in group III-nitrides

    SciTech Connect

    Li, S.X.; Yu, K.M.; Wu, J.; Jones, R.E.; Walukiewicz, W.; AgerIII, J.W.; Shan, W.; Haller, E.E.; Lu, Hai; Schaff, William J.

    2005-01-07

    Energetic particle irradiation is used to systematically introduce point defects into In{sub 1-x}Ga{sub x}N alloys over the entire composition range. Three types of energetic particles (electrons, protons, and {sup 4}He{sup +}) are used to produce a displacement damage dose spanning five decades. In InN and In-rich InGaN the free electron concentration increases with increasing irradiation dose but saturates at a sufficiently high dose. The saturation is due to Fermi level pinning at the Fermi Stabilization Energy (E{sub FS}), which is located at 4.9 eV below the vacuum level. Electrochemical capacitance-voltage (ECV) measurements show that the pinning of the surface Fermi energy at E{sub FS} is also responsible for the surface electron accumulation in as-grown InN and In-rich InGaN alloys. The results are in agreement with the amphoteric defect model that predicts that the same type of native defects are responsible for the Fermi level pinning in both cases.

  20. Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

    NASA Astrophysics Data System (ADS)

    Chèze, Caroline; Siekacz, Marcin; Isa, Fabio; Jenichen, Bernd; Feix, Felix; Buller, Jakov; Schulz, Tobias; Albrecht, Martin; Skierbiszewski, Czeslaw; Calarco, Raffaella; Riechert, Henning

    2016-09-01

    We investigate designed InN/GaN superlattices (SLs) grown by plasma-assisted molecular beam epitaxy on c-plane GaN templates in situ by line-of-sight quadrupole mass spectroscopy and laser reflectivity, and ex situ by scanning transmission electron microscopy, X-ray diffraction, and photoluminescence (PL). The structural methods reveal concordantly the different interface abruptness of SLs resulting from growth processes with different parameters. Particularly crucial for the formation of abrupt interfaces is the Ga to N ratio that has to be bigger than 1 during the growth of the GaN barriers, as Ga-excess GaN growth aims at preventing the unintentional incorporation of In accumulated on the growth surface after the supply of InN, that extends the (In,Ga)N quantum well (QW) thickness. Essentially, even with GaN barriers grown under Ga-excess yielding to 1 monolayer (ML) thick QWs, there is a real discrepancy between the designed binary InN and the actual ternary (In,Ga)N ML thick QWs revealed by the above methods. The PL emission line of the sample with atomically abrupt interfaces peaks at 366 nm, which is consistent with the In content measured to be less than 10%.

  1. Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

    NASA Astrophysics Data System (ADS)

    Yonenaga, Ichiro; Ohkubo, Yasushi; Deura, Momoko; Kutsukake, Kentaro; Tokumoto, Yuki; Ohno, Yutaka; Yoshikawa, Akihiko; Wang, Xin Qiang

    2015-07-01

    The hardness of wurtzite indium nitride (α-InN) films of 0.5 to 4 μm in thickness was measured by the nano-indentation method at room temperature. After investigation of crystalline quality by x-ray diffraction, the hardness and Young's modulus were determined to be 8.8 ± 0.4 and 184 ± 5 GPa, respectively, for the In (0001)- and N ( 000 1 ¯ ) -growth faces of InN films. The bulk and shear moduli were then derived to be 99 ± 3 and 77 ± 2 GPa, respectively. The Poisson's ratio was evaluated to be 0.17 ± 0.03. The results were examined comprehensively in comparison with previously reported data of InN as well as those of other nitrides of aluminum nitride and gallium nitride. The underlying physical process determining the moduli and hardness was examined in terms of atomic bonding and dislocation energy of the nitrides and wurtzite zinc oxide.

  2. Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

    SciTech Connect

    Lawniczak-Jablonska, K. |; Liliental-Weber, Z.; Gullikson, E.M.

    1997-04-01

    Group III nitrides (AlN, GaN, and InN) consist of the semiconductors which appear recently as a basic materials for optoelectronic devices active in the visible/ultraviolet spectrum as well as high-temperature and high-power microelectronic devices. However, understanding of the basic physical properties leading to application is still not satisfactory. One of the reasons consists in unsufficient knowledge of the band structure of the considered semiconductors. Several theoretical studies of III-nitrides band structure have been published but relatively few experimental studies have been carried out, particularly with respect to their conduction band structure. This motivated the authors to examine the conduction band structure projected onto p-states of the nitrogen atoms for AlN, GaN and InN. An additional advantage of their studies is the availability of the studied nitrides in two structures, hexagonal (wurtzite) and cubic (zincblende). This offers an opportunity to gain information about the role of the anisotropy of electronic band states in determining various physical properties.

  3. InN/InGaN dot-in-a-wire nanostructures emitting at 1.55 µm

    NASA Astrophysics Data System (ADS)

    Chen, Qiming; Yan, Changling; Qu, Yi

    2017-03-01

    The room temperature photoluminescence emission at 1.55 µm from InN/In0.7Ga0.3N dot-in-nanowire heterostructures, which was grown on self-assembled GaN nanowires on Si (1 1 1) under N-rich condition by plasma assisted molecular beam epitaxy, has been clarified in this paper. The morphology of the nanowires was uniform along the c-axis as proved by scanning electron microscope, each of the nanowires was grown individually and homogeneously without any coalescence phenomenon respectively. The nanowires dispersed on a silicon substrate showed very clear InN dot-in-nanowire structure by high resolution transmission electron microscopy. The structural properties of the individual InGaN nanocolumn were further investigated by high-angle annular dark field image analysis and energy dispersive x-ray spectrum, which confirmed the successful growth of InN quantum dot embedded in InGaN nanowire.

  4. High spatial uniformity of photoluminescence spectra in semipolar (202{sup ¯}1) plane InGaN/GaN quantum wells

    SciTech Connect

    Gelžinytė, K.; Ivanov, R.; Marcinkevičius, S.; Zhao, Y.; Becerra, D. L.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2015-01-14

    Scanning near-field optical spectroscopy was applied to study spatial variations of emission spectra at room temperature in semipolar (202{sup ¯}1) In{sub x}Ga{sub 1−x}N/GaN single quantum wells (QWs) for 0.11≤x≤0.36. Photoluminescence (PL) was found to be highly uniform, with peak wavelength deviations and peak intensity deviations divided by average values in the range of 6–12 meV and 0.03–0.07, respectively. Near-field maps of PL parameters showed large, ∼5 to 10 μm size areas of similar values, as opposed to 100 nm scale variations, often reported for InGaN QWs. The near-field PL spectra were found to broaden with increasing InN molar fraction. In the low In content QWs, the broadening is primarily determined by the random cation distribution, while for larger InN molar fractions 10 nm scale localization sites with increasingly deeper band potentials are suggested as the linewidth broadening cause.

  5. Thermodynamic theory of epitaxial alloys: first-principles mixed-basis cluster expansion of (In, Ga)N alloy film.

    PubMed

    Liu, Jefferson Zhe; Zunger, Alex

    2009-07-22

    Epitaxial growth of semiconductor alloys onto a fixed substrate has become the method of choice to make high quality crystals. In the coherent epitaxial growth, the lattice mismatch between the alloy film and the substrate induces a particular form of strain, adding a strain energy term into the free energy of the alloy system. Such epitaxial strain energy can alter the thermodynamics of the alloy, leading to a different phase diagram and different atomic microstructures. In this paper, we present a general-purpose mixed-basis cluster expansion method to describe the thermodynamics of an epitaxial alloy, where the formation energy of a structure is expressed in terms of pair and many-body interactions. With a finite number of first-principles calculation inputs, our method can predict the energies of various atomic structures with an accuracy comparable to that of first-principles calculations themselves. Epitaxial (In, Ga)N zinc-blende alloy grown on GaN(001) substrate is taken as an example to demonstrate the details of the method. Two (210) superlattice structures, (InN)(2)/(GaN)(2) (at x = 0.50) and (InN)(4)/(GaN)(1) (at x = 0.80), are identified as the ground state structures, in contrast to the phase-separation behavior of the bulk alloy.

  6. Synchrotron radiation photoemission study of the ultrathin Cs/InN interface

    NASA Astrophysics Data System (ADS)

    Benemanskaya, G. V.; Lapushkin, M. N.; Timoshnev, S. N.; Nelubov, A. V.

    2015-09-01

    Electronic structure of the ultrathin Cs/n-InN interface has been studied in situ via synchrotron-based photoemission spectroscopy by excitation in the energy range of 70-400 eV. Changes in the In 4d, Cs 4d, Cs 5p, N 2s core level spectra and in the surface state spectra have been revealed under different cesium coverages. The intrinsic surface state for the clean InN surface at binding energy of 2.5 eV (SS1) is found to attenuate during the Cs adsorption. Simultaneously the Cs induced surface state at binding energy of 0.9 eV (SS2) arises. For the Cs/InN interface, the In 4d peak displays the strong core level shift and the appearance of an additional In 4d peak originated from In-Cs interface bonding. Change in the surface electronic structure of the InN caused by Cs adsorption is found to originate predominantly from suppression of the intrinsic surface state concerned with the local interaction of In dangling bonds and Cs adatoms.

  7. First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES

    NASA Astrophysics Data System (ADS)

    Petit, M.; Ould-Metidji, Y.; Robert, Ch.; Bideux, L.; Gruzza, B.; Matolin, V.

    2003-05-01

    The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser diodes). It is essential for the realization of such novel devices to grow high-quality nitride single crystals. In this paper, we report the first stages of the InP(1 0 0) surfaces nitridation in order to grow high-quality nitride films. Indeed, the nitridation process is an important step in the growth of nitrides [J. Vac. Sci. Technol. A 17 (1999) 2194; Phys. Status Solidi A 176 (1999) 595]. Previous works [Synth. Met. 90 (1997) 2233; Appl. Phys. Lett. 63 (1993) 1957] have shown that in situ Ar + ions bombardment is useful on the one hand to clean the surface, and on the other hand to create droplets of metallic indium in well-controlled quantity. Then the indium metallic enrichment of the surface, monitoring by elastic peak electron spectroscopy (EPES) and Auger electron spectroscopy (AES) allows to prepare the III-V semiconductors surfaces to the nitridation step. The nitridated process has been performed with a high voltage plasma discharge cell and has been studied using quantitative Auger electron spectroscopy, elastic peak electron spectroscopy and electron energy loss spectroscopy (EELS), in order to optimize the conditions of InN layers formation.

  8. Vacancy-type defects in In{sub x}Ga{sub 1−x}N grown on GaN templates probed using monoenergetic positron beams

    SciTech Connect

    Uedono, Akira; Watanabe, Tomohito; Kimura, Shogo; Zhang, Yang; Lozac'h, Mickael; Sang, Liwen; Sumiya, Masatomo; Ishibashi, Shoji; Oshima, Nagayasu; Suzuki, Ryoichi

    2013-11-14

    Native defects in In{sub x}Ga{sub 1−x}N layers grown by metalorganic chemical vapor deposition were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons for a 200-nm-thick In{sub 0.13}Ga{sub 0.87}N layer showed that vacancy-type defects were introduced by InN alloying, and the major species of such defects was identified as complexes between a cation vacancy and nitrogen vacancies. The presence of the defects correlated with lattice relaxation of the In{sub 0.13}Ga{sub 0.87}N layer and the increase in photon emissions from donor-acceptor-pair recombination. The species of native defects in In{sub 0.06}Ga{sub 0.94}N layers was the same but its concentration was decreased by decreasing the InN composition. With the layer thickness increased from 120 nm to 360 nm, a defect-rich region was introduced in the subsurface region (<160 nm), which can be associated with layer growth with the relaxation of compressive stress.

  9. Structural and surface analysis of AlInN thin films synthesized by elemental stacks annealing

    NASA Astrophysics Data System (ADS)

    Afzal, Naveed; Devarajan, Mutharasu; Subramani, Shanmugan; Ibrahim, Kamarulazizi

    2014-04-01

    This paper presents the synthesis of AlInN thin films on Si (100) substrates using elemental stacks annealing (ESA) process. Single stack InN films were grown on Si (100) substrates by reactive radiofrequency (RF) magnetron sputtering using pure indium target in Ar-N2 environment and then an Al stack layer was deposited on the InN films by direct current (dc) sputtering of pure aluminum target in Ar atmosphere at room temperature. Annealing of the deposited films was carried out at 400 °C for 2, 4 and 6 h in a tube furnace under N2 atmosphere. X-ray diffraction (XRD) results reveal that annealing for 2 h does not produce a well-defined AlInN film, however, with the increase of annealing time to 4 h and to 6 h, (002) and (103) oriented highly crystalline AlInN films are formed with wurtzite structures. Field emission scanning electron microscopy (FESEM) results indicate a uniform film structure with grains growth by increasing the annealing time. Energy dispersive x-ray (EDX) analysis shows higher Al (atomic %) in the film as compared to In and N. Atomic force microscopy (AFM) results show a decrease in the surface roughness with increase of the annealing time.

  10. Comparison of ohmic metallization schemes for InGaAlN

    SciTech Connect

    Ren, F.; Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; Donovan, S.M.; MacKenzie, J.D.; Shul, R.J.; Zolper, J.C.; Lovejoy, M.L.; Baca, A.G.; Hagerott-Crawford, M.; Jones, K.A.

    1997-05-01

    W, WSi{sub 0.44}, and Ti/Al contacts were examined on n{sup +}In{sub 0.65}Ga{sub 0.35}N, InN, and In{sub 0.75}Al{sub 0.25}N. W was found to produce low specific contact resistance (q{sub c}{approximately}10{sup {minus}7}{Omega}cm{sup 2}) ohmic contacts to InGaN, while WSi{sub x} showed an as-deposited q{sub c} of 4{times}10{sup {minus}7}{Omega}cm{sup 2} but this degraded significantly with subsequent annealing, reaching 10{sup {minus}5}{Omega}cm{sup 2} at 700{degree}C. Ti/Al contacts on InGaN were stable to {approximately}600{degree}C (q{sub c}{approximately}4{times}10{sup {minus}7}{Omega}cm{sup 2} at {le}600{degree}C). InN contacted with W and Ti/Al produced ohmic contacts with q{sub c}{approximately}10{sup {minus}7}{Omega}cm{sup 2} and for WSi{sub x} q{sub c}{approximately}10{sup {minus}6}{Omega}cm{sup 2} and all three metallization schemes retained values {le}10{sup {minus}6}{Omega}cm{sup 2} up to 600{degree}C. The contact resistances for all of the metals were {ge}10{sup {minus}4}{Omega}cm{sup 2} on InAlN, and degraded with subsequent annealing. WSi{sub x} contacts on InN grown graded from In{sub 0.6}Al{sub 0.4}N were also examined. The specific contact resistance was an order of magnitude lower (q{sub c}{approximately}10{sup {minus}5}{Omega}cm{sup 2}) after 500{degree}C anneal than that measured for WSi{sub x} deposited directly on In{sub 0.6}Al{sub 0.4}N. Measurements of the temperature dependence of these contact structures showed that field emission was generally the most important conduction mechanism. {copyright} {ital 1997 American Vacuum Society.}

  11. Alpha List of Prime Contract Awards. Oct 92-Sep 93. FY93. (W & G Machine Co. nc. - Zycad Corporation). Part 20

    DTIC Science & Technology

    1994-03-01

    ON-4 ItI(TfCI waoD4NUI ~ m co en m 4 Y v44 ~rrP0 rP-.Go-4Itwrn0IM N CYC-40) CI’ N0CV)inN(6Goo 4 ~nrZGo0 1 to ON o G10 -4 CV n 4C𔃼-0 (D rn000000OO4-4...I0o00 aGIN 1- -4 C -4-ý4 CV.-4 InN1 1 go0 t4 - ’ UQ Cy 4I UN *- . (00 ) P.t. r-4 CI% >,cp In - (-I a cmN (D (0 (n U a I CID04 VI 00C000-4-4 wo 0000 1

  12. 20th JANNAF Propulsion Systems Hazards Subcommittee Meeting. Volume 1

    NASA Technical Reports Server (NTRS)

    Cocchiaro, James E. (Editor); Eggleston, Debra S. (Editor); Gannaway, Mary T. (Editor); Inzar, Jeanette M. (Editor)

    2002-01-01

    This volume, the first of two volumes, is a collection of 24 unclassified/unlimited-distribution papers which were presented at the Joint Army-Navy-NASA-Air Force (JANNAF) 20th Propulsion Systems Hazards Subcommittee (PSHS), 38th Combustion Subcommittee (CS), 26th Airbreathing Propulsion Subcommittee (APS), and 21 Modeling and Simulation Subcommittee meeting. The meeting was held 8-12 April 2002 at the Bayside Inn at The Sandestin Golf & Beach Resort and Eglin Air Force Base, Destin, Florida. Topics covered include: insensitive munitions and hazard classification testing of solid rocket motors and other munitions; vulnerability of gun propellants to impact stimuli; thermal decomposition and cookoff properties of energetic materials; burn-to-violent reaction phenomena in energetic materials; and shock-to-detonation properties of solid propellants and energetic materials.

  13. A User’s Guide to CERC’s Field Research Facility.

    DTIC Science & Technology

    1981-10-01

    from U.S. Geological Survey, USGS, luaps NJ 18-8, -11; NI 18-2). 22 d. Vehicle Use and Rentals. Vehicles with an axle width less than 3.1 meters and a...weight under 900 kilograms (2,000 pounds) per wheel may be driven on the pier with permission of the FRF Chief. Beach access is provided just south of...50501, C.C. , *’Coastal V, ,Ittit inn11, A( o i, Ir1 r,,ii~C5 a,,nt L l.i, nirn L cr :2 t’ I nO~i-Io Fnvtlir ont Inventors .: -t;iz 5ur ’.eiitliJ. .itI S

  14. Urbach's tail in III-nitrides under an electric field

    SciTech Connect

    Rodrigues, Cloves G.; Vasconcellos, Aurea R.; Luzzi, Roberto; Freire, V. N.

    2001-08-15

    We consider electron-hole recombination in wide-gap strong-polar semiconductors of the III-nitride family under high electric fields. The calculated low-energy side of the luminescense spectrum displays the so-called Urbach's tail, which is characterized as resulting from the presence of sidebands in the form of replicas of the main band, corresponding to recombination with accompanying emission of one, two, etc., LO phonons. The influence of the nonequilibrium macroscopic state of hot carriers and phonons on the luminescence spectrum is evidenced. Our results for a 45 kV/cm electric field intensity point to 50, 120, and 220 meV Urbach tail widths in, respectively, wurtzite InN, GaN, and AlN. {copyright} 2001 American Institute of Physics.

  15. Development of Flight-Safety Prediction Methodology for U.S. Naval Safety Center

    DTIC Science & Technology

    1969-06-01

    criticality in operational aircraft provides the visibility necessary for arriving at decisions to mod or not-to-mod, optimizing of cost versus...0841 RICA "BAS AAAAAAAAA a*FRT 𔃺 TURBINE 323431 NlArA A31 SECONDe A:AG TURBINE 323032 Nare 3B THIRD BTAGE TUBINE 323*33 RoArPC :1 INNE woaIR BAFFLE...AS$- 1000DO "To ACT 61 CI.Tl4 MIGHT? ICaSm Costs h000.5 *4*4*444 AC0TI’%6 CYLIMOAR :41157 R00655* 0.4 -AV m1STXICTDA LAOS- 8005500 bW’V’LL VALVE 149S

  16. Stabilizers for GAP and GAP-based Propellants Interim Report

    DTIC Science & Technology

    2008-10-09

    the m j o r deconposit inn pathways of GAP and U P prope l lan ts i n o r d e r to i n p r o w long term storage stabi l i ty. Model c- s inw...la t i ng t h e ut ido-bear ing frmctional units of GAP ( a z i d e adjacent t o po lye ther k k b o n e , az ide sd jacent t o terminal...binder i n prope l lan t -ag ing studies has varied accord2~g t o the to t of GAP used. This v a r i a b i l i t y my k linked to residual i n p

  17. Development of an Advanced Computational Model for OMCVD of Indium Nitride

    NASA Technical Reports Server (NTRS)

    Cardelino, Carlos A.; Moore, Craig E.; Cardelino, Beatriz H.; Zhou, Ning; Lowry, Sam; Krishnan, Anantha; Frazier, Donald O.; Bachmann, Klaus J.

    1999-01-01

    An advanced computational model is being developed to predict the formation of indium nitride (InN) film from the reaction of trimethylindium (In(CH3)3) with ammonia (NH3). The components are introduced into the reactor in the gas phase within a background of molecular nitrogen (N2). Organometallic chemical vapor deposition occurs on a heated sapphire surface. The model simulates heat and mass transport with gas and surface chemistry under steady state and pulsed conditions. The development and validation of an accurate model for the interactions between the diffusion of gas phase species and surface kinetics is essential to enable the regulation of the process in order to produce a low defect material. The validation of the model will be performed in concert with a NASA-North Carolina State University project.

  18. N-Version Software Demonstration for Digital Flight Controls.

    DTIC Science & Technology

    1987-04-01

    AUTOLAND; for INDEX In 1..4 loop If AL-COMPV3GSBFAM.VAL(INDEX) = TRUF thlen NUM-VAL.GS := NUM-,.AL.GS 1 ; end it ; % it AL-COmP.V3.RATX.ALT..VAL(INnEX...1;j IfACTR-CUIJNT >= 3 then ACTR-.ChK := FALSE; end it ; else ACTR.COULNT := 0 end it end It f when 3 => - Faiilted It SERVO-JACTtJATOp~flN = TRUF ...thon ACTR-.COU14T :: -t ond it ; when -50..-l => -- Healina it SEHVO-3.ACTJATOR-flN = TRUF 3*then ACTP..COVNT := ACTP.CuUNT - I If ACTR-.COUNT <= -50

  19. A Fusion Algorithm for GFP Image and Phase Contrast Image of Arabidopsis Cell Based on SFL-Contourlet Transform

    PubMed Central

    Feng, Peng; Wang, Jing; Wei, Biao; Mi, Deling

    2013-01-01

    A hybrid multiscale and multilevel image fusion algorithm for green fluorescent protein (GFP) image and phase contrast image of Arabidopsis cell is proposed in this paper. Combining intensity-hue-saturation (IHS) transform and sharp frequency localization Contourlet transform (SFL-CT), this algorithm uses different fusion strategies for different detailed subbands, which include neighborhood consistency measurement (NCM) that can adaptively find balance between color background and gray structure. Also two kinds of neighborhood classes based on empirical model are taken into consideration. Visual information fidelity (VIF) as an objective criterion is introduced to evaluate the fusion image. The experimental results of 117 groups of Arabidopsis cell image from John Innes Center show that the new algorithm cannot only make the details of original images well preserved but also improve the visibility of the fusion image, which shows the superiority of the novel method to traditional ones. PMID:23476716

  20. Time, Energy, and Spatially Resolved TEM Investigations of Defectsin InGaN

    SciTech Connect

    Jinschek, J.R.; Kisielowski, C.

    2005-10-01

    A novel sample preparation technique is reported to fabricate electron transparent samples from devices utilizing a FIB process with a successive wet etching step. The high quality of the obtained samples allows for band gap--and chemical composition measurements of In{sub x}Ga{sub 1-x}N quantum wells where electron beam induced damage can be controlled and shown to be negligible. The results reveal indium enrichment in nanoclusters and defects that cause fluctuations of the band gap energy and can be measured by low loss Electron Energy Spectroscopy with nm resolution. Comparing our time, energy, and spatially resolved measurements of band gap energies, chemical composition, and their related fluctuations with literature data, we find quantitative agreement if the band gap energy of InN is 1.5-2 eV.