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Sample records for insulated gate field

  1. Multiplexer uses insulated gate-field effect transistors

    NASA Technical Reports Server (NTRS)

    Gussow, S. S.

    1967-01-01

    Small lightweight multiplexer incorporates IG-FETs /Insulated Gate-Field Effect Transistors/ for all digital logic functions, including the internally generated 3.6-kHz clock. It consists of 30 primary channels, each of which is sampled 120 times per second.

  2. Radiation tolerant silicon nitride insulated gate field effect transistors

    NASA Technical Reports Server (NTRS)

    Newman, P. A.

    1969-01-01

    Metal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance. It is useful in electronic systems exposed to space radiation environment or the effects of nuclear weapons.

  3. High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators

    NASA Astrophysics Data System (ADS)

    Kim, Youn Sun; Jung, Ki Hwa; Lee, U. Ra; Kim, Kyung Hwan; Hoang, Mai Ha; Jin, Jung-Il; Choi, Dong Hoon

    2010-03-01

    Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a copolymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators for fabricating organic thin-film transistors. An organic semiconductor (5,5'-(9,10-bis((4-hexylphenyl)ethynyl)anthracene-2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e., 0.31 cm2 V-1 s-1 (Ion/Ioff=1.0×104).

  4. H-terminated diamond field effect transistor with ferroelectric gate insulator

    NASA Astrophysics Data System (ADS)

    Karaya, Ryota; Furuichi, Hiroki; Nakajima, Takashi; Tokuda, Norio; Kawae, Takeshi

    2016-06-01

    An H-terminated diamond field-effect-transistor (FET) with a ferroelectric vinylidene fluoride (VDF)-trifluoroethylene (TrFE) copolymer gate insulator was fabricated. The VDF-TrFE film was deposited on the H-terminated diamond by the spin-coating method and low-temperature annealing was performed to suppress processing damage to the H-terminated diamond surface channel layer. The fabricated FET structure showed the typical properties of depletion-type p-channel FET and showed clear saturation of the drain current with a maximum value of 50 mA/mm. The drain current versus gate voltage curves of the proposed FET showed clockwise hysteresis loops due to the ferroelectricity of the VDF-TrFE gate insulator, and the memory window width was 19 V, when the gate voltage was swept from 20 to -20 V. The maximum on/off current ratio and the linear mobility were 108 and 398 cm2/V s, respectively. In addition, we modulated the drain current of the fabricated FET structure via the remnant polarization of the VDF-TrFE gate and obtained an on/off current ratio of 103 without applying a DC gate voltage.

  5. Demonstration of large field effect in topological insulator films via a high-κ back gate

    NASA Astrophysics Data System (ADS)

    Wang, C. Y.; Lin, H. Y.; Yang, S. R.; Chen, K. H. M.; Lin, Y. H.; Chen, K. H.; Young, L. B.; Cheng, C. K.; Fanchiang, Y. T.; Tseng, S. C.; Hong, M.; Kwo, J.

    2016-05-01

    The spintronics applications long anticipated for topological insulators (TIs) has been hampered due to the presence of high density intrinsic defects in the bulk states. In this work we demonstrate the back-gating effect on TIs by integrating Bi2Se3 films 6-10 quintuple layer (QL) thick with amorphous high-κ oxides of Al2O3 and Y2O3. Large gating effect of tuning the Fermi level EF to very close to the band gap was observed, with an applied bias of an order of magnitude smaller than those of the SiO2 back gate, and the modulation of film resistance can reach as high as 1200%. The dependence of the gating effect on the TI film thickness was investigated, and ΔN2D/ΔVg varies with TI film thickness as ˜t-0.75. To enhance the gating effect, a Y2O3 layer thickness 4 nm was inserted into Al2O3 gate stack to increase the total κ value to 13.2. A 1.4 times stronger gating effect is observed, and the increment of induced carrier numbers is in good agreement with additional charges accumulated in the higher κ oxides. Moreover, we have reduced the intrinsic carrier concentration in the TI film by doping Te to Bi2Se3 to form Bi2TexSe1-x. The observation of a mixed state of ambipolar field that both electrons and holes are present indicates that we have tuned the EF very close to the Dirac Point. These results have demonstrated that our capability of gating TIs with high-κ back gate to pave the way to spin devices of tunable EF for dissipationless spintronics based on well-established semiconductor technology.

  6. Gate tunable relativistic mass and Berry's phase in topological insulator nanoribbon field effect devices.

    PubMed

    Jauregui, Luis A; Pettes, Michael T; Rokhinson, Leonid P; Shi, Li; Chen, Yong P

    2015-02-13

    Transport due to spin-helical massless Dirac fermion surface state is of paramount importance to realize various new physical phenomena in topological insulators, ranging from quantum anomalous Hall effect to Majorana fermions. However, one of the most important hallmarks of topological surface states, the Dirac linear band dispersion, has been difficult to reveal directly in transport measurements. Here we report experiments on Bi2Te3 nanoribbon ambipolar field effect devices on high-κ SrTiO3 substrates, where we achieve a gate-tuned bulk metal-insulator transition and the topological transport regime with substantial surface state conduction. In this regime, we report two unambiguous transport evidences for gate-tunable Dirac fermions through π Berry's phase in Shubnikov-de Haas oscillations and effective mass proportional to the Fermi momentum, indicating linear energy-momentum dispersion. We also measure a gate-tunable weak anti-localization (WAL) with 2 coherent conduction channels (indicating 2 decoupled surfaces) near the charge neutrality point, and a transition to weak localization (indicating a collapse of the Berry's phase) when the Fermi energy approaches the bulk conduction band. The gate-tunable Dirac fermion topological surface states pave the way towards a variety of topological electronic devices.

  7. Electric field gating near the metal-insulator transition using ionic liquid dielectrics

    NASA Astrophysics Data System (ADS)

    Hebard, Arthur; Misra, Rajiv; McCarthy, Mitchell

    2007-03-01

    Ionic liquids (ILs) are highly polar low-melting-temperature binary salts typically comprising nitrogen-containing organic cations and inorganic anions. Since there is no solvent, ILs are distinctly different from aqueous, organic, gel or polymer electrolytes. Using either coplanar or overlay gate configurations in which the IL is the gate dielectric, we demonstrate room temperature field-induced resistance changes on the order of a factor of 10^4 for thin conducting InOx films. There is a large asymmetry manifested by the significantly larger changes in impedance for negative gate voltage Vg (electron depletion) compared to positive Vg (electron enhancement). The pronounced frequency dependence over the range 10-2--10^6 Hz, due to the low ionic mobilities in the dielectric fluid, is modeled well by a simple RC circuit from which an effective areal gate capacitance can be derived. The induced surface charge densities and field-effect mobilities noticeably exceed those that can be achieved on similar films using AlOx dielectrics. In addition, the charge state can be frozen in by reducing the temperature below the glass transition (˜250K) of the IL, thus providing an opportunity for electric field tuning of metal-insulator transitions in a variety of novel thin-film systems.

  8. High capacitance organic field-effect transistors with modified gate insulator surface

    NASA Astrophysics Data System (ADS)

    Majewski, L. A.; Schroeder, R.; Grell, M.; Glarvey, P. A.; Turner, M. L.

    2004-11-01

    In this paper, we report on flexible, high capacitance, pentacene, and regioregular poly(3-hexylthiophene) (rr-P3HT) organic field-effect transistors fabricated on metallized Mylar films. The gate insulator, Al2O3, was prepared by means of anodization. We show that covering the anodized gate insulator with an octadecyltrichlorosilane self-assembled monolayer or apoly(α-methylstyrene) capping layer has the same effect on carrier mobility as for thermally grown silicon oxide. In addition, temperature-dependent measurements of mobility were performed on transistors fabricated with and without modification of the gate dielectric. In the case of both the pentacene and the rr-P3HT transistors, the μ(T ) behavior shows that the cause of the mobility enhancement through surface modification is not a reduction in the level of energetic disorder (σ in Bässler's model), as in the case of the fully amorphous organic semiconductor poly(triarylamine) [Veres et al., Adv. Funct. Mater. 13, 199 (2003)]. It appears that the surface modification improves mobility by changing the morphology of the semiconducting films.

  9. Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

    NASA Technical Reports Server (NTRS)

    Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

    1994-01-01

    Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

  10. Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

    NASA Technical Reports Server (NTRS)

    Johnson, Gregory A.; Kapoor, Vik J.

    1991-01-01

    Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

  11. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    NASA Technical Reports Server (NTRS)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  12. Advanced insulated gate bipolar transistor gate drive

    DOEpatents

    Short, James Evans; West, Shawn Michael; Fabean, Robert J.

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  13. A Pt-Ti-O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor

    NASA Astrophysics Data System (ADS)

    Usagawa, Toshiyuki; Kikuchi, Yota

    2010-10-01

    A hydrogen gas sensor based on platinum-titanium-oxygen (Pt-Ti-O) gate silicon-metal-insulator-semiconductor field-effect transistors (Si-MISFETs) was developed. The sensor has a unique gate structure composed of titanium and oxygen accumulated around platinum grains on top of a novel mixed layer of nanocrystalline TiOx and superheavily oxygen-doped amorphous titanium formed on SiO2/Si substrates. The FET hydrogen sensor shows high reliability and high sensing amplitude (Δ Vg) defined by the magnitude of the threshold voltage shift. Δ Vg is well fitted by a linear function of the logarithm of air-diluted hydrogen concentration C (ppm), i.e., Δ Vg(V) =0.355 log C(ppm ) -0.610 , between 100 ppm and 1%. This high gradient coefficient of Δ Vg for the wide sensing range demonstrates that the sensor is suitable for most hydrogen-safety-monitoring sensor systems. The Pt-Ti-O structures of the sensor are typically realized by annealing Pt (15 nm)/Ti (5 nm)-gate Si-metal-oxide-semiconductor structures in air at 400 °C for 2 h. The Pt-Ti-O gate MIS structures were analyzed by transmission electron microscope (TEM), x-ray diffraction, Auger electron spectroscopy, and TEM energy dispersive x-ray spectroscopy. From the viewpoint of practical sensing applications, hydrogen postannealing of the Pt-Ti-O gate Si-MISFETs is necessary to reduce the residual sensing amplitudes with long tailing profiles.

  14. Rubrene single crystal field-effect transistor with epitaxial BaTiO{sub 3} high-k gate insulator

    SciTech Connect

    Hiroshiba, Nobuya; Kumashiro, Ryotaro; Tanigaki, Katsumi; Takenobu, Taishi; Iwasa, Yoshihiro; Kotani, Kenta; Kawayama, Iwao; Tonouchi, Masayoshi

    2006-10-09

    High quality BaTiO{sub 3} thin-film epitaxially grown on a Nb-doped SrTiO{sub 3} (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant {epsilon} of 280 esu for the prepared BaTiO{sub 3} thin-film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO{sub 2}. This is the highest carrier number so far obtained in organic field-effect transistors (FETs). Other important parameters of rubrene single crystal FETs on BTO/Nb-STO are described in comparison with those on SiO{sub 2}/doped-Si.

  15. High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor

    SciTech Connect

    Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

    2014-01-06

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

  16. High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

    NASA Astrophysics Data System (ADS)

    Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

    2014-01-01

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm2/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

  17. Pt-Ti-O gate silicon-metal-insulator-semiconductor field-effect transistor hydrogen gas sensors in harsh environments

    NASA Astrophysics Data System (ADS)

    Usagawa, Toshiyuki; Ueda, Kazuhiro; Nambu, Akira; Yoneyama, Akio; Kikuchi, Yota; Watanabe, Atsushi

    2016-06-01

    The influence of radiation damages to developed hydrogen gas sensor chips from γ-rays (60Co) and/or X-rays (synchrotron radiation) is manageably avoided for sensor operations even at extremely high integral doses such as 1.8 and/or 18 MGy. Platinum-titanium-oxygen (Pt-Ti-O) gate silicon-metal-insulator-semiconductor field-effect transistor (Si-MISFET) hydrogen gas sensors can work stably as hydrogen sensors up to about 270 °C and also show environmental hardness as follows: When nitrogen-diluted 10-ppm hexamethyldisiloxane (HMDS) was exposed to the sensor FETs for 40 min at a working temperature of 115 °C, large sensing amplitude (ΔV g) changed little within repetition errors before and after HMDS exposures. The variations of ΔV g among relative humidity of 20 and 80% are very small within ±4.4% around 50% under 40 °C atmosphere. The Pt-Ti-O sensors have been found to show large ΔV g of 624.4 mV with σΔV g of 7.27 mV for nine times repeated measurements under nitrogen-diluted 1.0%-hydrogen gas, which are nearly the same values of 654.5 mV with σΔV g of 3.77 mV under air-diluted 1.0%-hydrogen gas.

  18. Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

    NASA Astrophysics Data System (ADS)

    Suarez, Ernesto; Chan, Pik-Yiu; Lingalugari, Murali; Ayers, John E.; Heller, Evan; Jain, Faquir

    2013-11-01

    This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells.

  19. Top-gated graphene field-effect transistors by low-temperature synthesized SiN x insulator on SiC substrates

    NASA Astrophysics Data System (ADS)

    Ohno, Yasuhide; Kanai, Yasushi; Mori, Yuki; Nagase, Masao; Matsumoto, Kazuhiko

    2016-06-01

    Top-gated devices made from an epitaxial graphene film on a 4H-SiC substrate were fabricated. Atomic force microscopy and Raman spectroscopy results showed that a large-scale highly uniform monolayer graphene film was synthesized on the SiC substrate. A SiN x passivation film was deposited on a SiC graphene device as a top gate insulator by catalytic chemical-vapor deposition (Cat-CVD) below 65 °C. After the top gate electrode was formed on the SiN x film, no leakage current flowed between the gate and source electrodes. The transport characteristics showed clear ambipolar characteristics from 8 to 280 K, and the temperature dependences of the conductance and field-effect mobility of the devices implied that monolayer graphene devices can be successfully fabricated. Moreover, the position of the charge neutrality point after SiN x deposition was around 0 V, indicating p-doping characteristics. These results indicate that SiN x films synthesized by Cat-CVD can be used as gate insulators and that the carrier type may be controlled by adjusting the deposition conditions.

  20. Persistent optical gating of a topological insulator.

    PubMed

    Yeats, Andrew L; Pan, Yu; Richardella, Anthony; Mintun, Peter J; Samarth, Nitin; Awschalom, David D

    2015-10-01

    The spin-polarized surface states of topological insulators (TIs) are attractive for applications in spintronics and quantum computing. A central challenge with these materials is to reliably tune the chemical potential of their electrons with respect to the Dirac point and the bulk bands. We demonstrate persistent, bidirectional optical control of the chemical potential of (Bi,Sb)2Te3 thin films grown on SrTiO3. By optically modulating a space-charge layer in the SrTiO3 substrates, we induce a persistent field effect in the TI films comparable to electrostatic gating techniques but without additional materials or processing. This enables us to optically pattern arbitrarily shaped p- and n-type regions in a TI, which we subsequently image with scanning photocurrent microscopy. The ability to optically write and erase mesoscopic electronic structures in a TI may aid in the investigation of the unique properties of the topological insulating phase. The gating effect also generalizes to other thin-film materials, suggesting that these phenomena could provide optical control of chemical potential in a wide range of ultrathin electronic systems. PMID:26601300

  1. Persistent optical gating of a topological insulator

    PubMed Central

    Yeats, Andrew L.; Pan, Yu; Richardella, Anthony; Mintun, Peter J.; Samarth, Nitin; Awschalom, David D.

    2015-01-01

    The spin-polarized surface states of topological insulators (TIs) are attractive for applications in spintronics and quantum computing. A central challenge with these materials is to reliably tune the chemical potential of their electrons with respect to the Dirac point and the bulk bands. We demonstrate persistent, bidirectional optical control of the chemical potential of (Bi,Sb)2Te3 thin films grown on SrTiO3. By optically modulating a space-charge layer in the SrTiO3 substrates, we induce a persistent field effect in the TI films comparable to electrostatic gating techniques but without additional materials or processing. This enables us to optically pattern arbitrarily shaped p- and n-type regions in a TI, which we subsequently image with scanning photocurrent microscopy. The ability to optically write and erase mesoscopic electronic structures in a TI may aid in the investigation of the unique properties of the topological insulating phase. The gating effect also generalizes to other thin-film materials, suggesting that these phenomena could provide optical control of chemical potential in a wide range of ultrathin electronic systems. PMID:26601300

  2. Persistent optical gating of a topological insulator.

    PubMed

    Yeats, Andrew L; Pan, Yu; Richardella, Anthony; Mintun, Peter J; Samarth, Nitin; Awschalom, David D

    2015-10-01

    The spin-polarized surface states of topological insulators (TIs) are attractive for applications in spintronics and quantum computing. A central challenge with these materials is to reliably tune the chemical potential of their electrons with respect to the Dirac point and the bulk bands. We demonstrate persistent, bidirectional optical control of the chemical potential of (Bi,Sb)2Te3 thin films grown on SrTiO3. By optically modulating a space-charge layer in the SrTiO3 substrates, we induce a persistent field effect in the TI films comparable to electrostatic gating techniques but without additional materials or processing. This enables us to optically pattern arbitrarily shaped p- and n-type regions in a TI, which we subsequently image with scanning photocurrent microscopy. The ability to optically write and erase mesoscopic electronic structures in a TI may aid in the investigation of the unique properties of the topological insulating phase. The gating effect also generalizes to other thin-film materials, suggesting that these phenomena could provide optical control of chemical potential in a wide range of ultrathin electronic systems.

  3. Performance enhancement of poly(3-hexylthiophene-2,5-diyl) based field effect transistors through surfactant treatment of the poly(vinyl alcohol) gate insulator surface.

    PubMed

    Nawaz, Ali; Cruz-Cruz, Isidro; Rodrigues, Rafael; Hümmelgen, Ivo A

    2015-10-28

    We report on the improvement of field effect transistors based on poly(3-hexylthiophene-2,5-diyl) (P3HT) as a channel semiconductor and crosslinked poly(vinyl alcohol) (cr-PVA) as a gate insulator, through the treatment of the cr-PVA film surface before P3HT deposition. We treated the cr-PVA either with hydrochloric acid (HCl) or with a cationic surfactant, hexadecyltrimethylammonium bromide (CTAB), aiming at the passivation of the hole traps at the cr-PVA/P3HT interface. The treatment with HCl leads to an excessive increase in the transistor leakage current and unstable electrical characteristics, despite implying an increase in the gate capacitance. The treatment with CTAB leads to transistors with ca. 50% higher specific capacitance and a tenfold increase in the charge carrier field-effect mobility, when compared to devices based on untreated cr-PVA.

  4. Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

    SciTech Connect

    Tolbert, Leon M; Huque, Mohammad A; Blalock, Benjamin J; Islam, Syed K

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  5. Minimization of Gate-Induced Drain Leakage by Controlling Gate Underlap Length for Low-Standby-Power Operation of 20-nm-Level Four-Terminal Silicon-on-Insulator Fin-Shaped Field Effect Transistor

    NASA Astrophysics Data System (ADS)

    Cho, Seongjae; O'uchi, Shinichi; Endo, Kazuhiko; Matsukawa, Takashi; Sakamoto, Kunihiro; Liu, Yongxun; Park, Byung-Gook; Masahara, Meishoku

    2010-02-01

    Recently, gate-induced drain leakage (GIDL) has become a crucial factor of current characteristics as junction doping concentration becomes more abruptly graded owing to device scaling. It should be effectively suppressed for the low-standby-power operation of ultra small metal-oxide-semiconductor field effect transistor (MOSFET) devices. In this work, the appropriate underlap length range for the effective minimization of GIDL in 20-nm-level four-terminal (4-T) fin-shaped FET (FinFET) on silicon-on-insulator (SOI) is established. In order to identify the effect of underlap length on GIDL more precisely, the source and drain (S/D) junction doping profile and the majority/minority carrier lifetimes have been extracted by the measurement of a p-n junction test element group (TEG). The TEG was fabricated under the same process conditions that were used in forming the S/D junctions of 100-nm-level 4-T SOI FinFET in our previous research. The GIDL component in the off-state current is investigated with underlap length variation along with the inspection of basic current characteristics. For low-standby-power operation, an underlap junction is more desirable than an overlap junction, and the underlap length should be at least 10 nm to suppress GIDL effectively.

  6. Evaluation of nanocomposite gate insulators for flexible organic thin-film transistors.

    PubMed

    Kim, Jin Soo; Cho, Sung Won; Kim, Ii; Hwang, Byeong Ung; Seol, Young Gug; Kim, Tae Woong; Lee, Nae-Eung

    2014-11-01

    To develop physically flexible electronics, high performance and mechanical stability of component materials and devices are required. For a flexible display, a backplane with flexible thin-film transistors (TFTs) must be developed. Gate insulating materials with excellent electrical and mechanical properties are highly important to the development of flexible TFTs. We investigated nanocomposite gate dielectrics composed of polyimide (PI) because of their superior thermal stability, as well as different inorganic HfO2, TiO2, and Al2O3 nanoparticles with high dielectric constants. Nanocomposite gate dielectrics of HfO2 nanoparticles and PI lowered leakage current density and increased the relative dielectric constant compared to PI solely because of a high degree of dispersion. Pentacene TFTs with HfO2 nanocomposite gate insulators also showed higher field-effect mobility (μ), smaller subthreshold swing, and an enhanced on/off current ratio (I(on/off)) compared to those of the PI gate dielectric. In addition, mechanical cyclic bending tests involving bending cycles of 2 x 10(5) time sat a bending radius of 5 mm showed improvement in electrical stability of nanocomposite gate insulators with a change in leakage current density of nanocomposite gate insulators below 30%.

  7. A scheme for a topological insulator field effect transistor

    NASA Astrophysics Data System (ADS)

    Vali, Mehran; Dideban, Daryoosh; Moezi, Negin

    2015-05-01

    We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.

  8. Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices

    SciTech Connect

    Gala, F.; Zollo, G.

    2014-06-19

    Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates.

  9. Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices

    NASA Astrophysics Data System (ADS)

    Gala, F.; Zollo, G.

    2014-06-01

    Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates.

  10. Gate-tuned normal and superconducting transport at the surface of a topological insulator.

    PubMed

    Sacépé, Benjamin; Oostinga, Jeroen B; Li, Jian; Ubaldini, Alberto; Couto, Nuno J G; Giannini, Enrico; Morpurgo, Alberto F

    2011-01-01

    Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport measurements in suitably designed electronic devices. Here we study transport through superconducting junctions fabricated on thin Bi(2)Se(3) single crystals, equipped with a gate electrode. In the presence of perpendicular magnetic field B, sweeping the gate voltage enables us to observe the filling of the Dirac fermion Landau levels, whose character evolves continuously from electron- to hole-like. When B=0, a supercurrent appears, whose magnitude can be gate tuned, and is minimum at the charge neutrality point determined from the Landau level filling. Our results demonstrate how gated nano-electronic devices give control over normal and superconducting transport of Dirac fermions at an individual surface of a three-dimensional topological insulators.

  11. Gas insulated transmission line with insulators having field controlling recesses

    DOEpatents

    Cookson, Alan H.; Pederson, Bjorn O.

    1984-01-01

    A gas insulated transmission line having a novel insulator for supporting an inner conductor concentrically within an outer sheath. The insulator has a recess contiguous with the periphery of one of the outer and inner conductors. The recess is disposed to a depth equal to an optimum gap for the dielectric insulating fluid used for the high voltage insulation or alternately disposed to a large depth so as to reduce the field at the critical conductor/insulator interface.

  12. A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection

    NASA Astrophysics Data System (ADS)

    Wan, J.; Cristoloveanu, S.; Le Royer, C.; Zaslavsky, A.

    2012-10-01

    We experimentally demonstrate a field-effect transistor with a single front gate built on fully-depleted silicon-on-insulator substrate that possesses extremely steep switching slope (≪1 mV/decade) and gate-controllable hysteresis. The mechanism for the sharp switching, confirmed by simulations, involves the positive feedback between the gate-modulated charge injection barriers and the electron and hole components of the source-drain current. The transistor is named Z2-FET as it features zero impact ionization (unlike thyristors) and zero subthreshold swing.

  13. Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira

    2015-12-01

    The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal-insulator transitions. Metal-insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controlled metal-insulator transitions have been challenging because of the limited number of electrons accumulated by gate dielectrics, or possible electrochemical reaction in ionic liquid gate. Here we achieve a positive-bias gate-controlled metal-insulator transition near the transition temperature. A significant number of electrons were accumulated via a high-permittivity TiO2 gate dielectric with subnanometre equivalent oxide thickness in the inverse-Schottky-gate geometry. An abrupt transition in the VO2 channel is further exploited, leading to a significant current modulation far beyond the capacitive coupling. This solid-state operation enables us to discuss the electrostatic mechanism as well as the collective nature of gate-controlled metal-insulator transitions, paving the pathway for developing functional field effect transistors.

  14. Positive-bias gate-controlled metal–insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

    PubMed Central

    Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira

    2015-01-01

    The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal–insulator transitions. Metal–insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controlled metal–insulator transitions have been challenging because of the limited number of electrons accumulated by gate dielectrics, or possible electrochemical reaction in ionic liquid gate. Here we achieve a positive-bias gate-controlled metal–insulator transition near the transition temperature. A significant number of electrons were accumulated via a high-permittivity TiO2 gate dielectric with subnanometre equivalent oxide thickness in the inverse-Schottky-gate geometry. An abrupt transition in the VO2 channel is further exploited, leading to a significant current modulation far beyond the capacitive coupling. This solid-state operation enables us to discuss the electrostatic mechanism as well as the collective nature of gate-controlled metal–insulator transitions, paving the pathway for developing functional field effect transistors. PMID:26657761

  15. Magnetic gating of a 2D topological insulator.

    PubMed

    Dang, Xiaoqian; Burton, J D; Tsymbal, Evgeny Y

    2016-09-28

    Deterministic control of transport properties through manipulation of spin states is one of the paradigms of spintronics. Topological insulators offer a new playground for exploring interesting spin-dependent phenomena. Here, we consider a ferromagnetic 'gate' representing a magnetic adatom coupled to the topologically protected edge state of a two-dimensional (2D) topological insulator to modulate the electron transmission of the edge state. Due to the locked spin and wave vector of the transport electrons the transmission across the magnetic gate depends on the mutual orientation of the adatom magnetic moment and the current. If the Fermi energy matches an exchange-split bound state of the adatom, the electron transmission can be blocked due to the full back scattering of the incident wave. This antiresonance behavior is controlled by the adatom magnetic moment orientation so that the transmission of the edge state can be changed from 1 to 0. Expanding this consideration to a ferromagnetic gate representing a 1D chain of atoms shows a possibility to control the spin-dependent current of a strip of a 2D topological insulator by magnetization orientation of the ferromagnetic gate. PMID:27437829

  16. Field insulation materials and problems

    NASA Astrophysics Data System (ADS)

    Vogt, G. H.

    1981-12-01

    In a turbine generator the rotating field requires insulation materials and design considerations much different from the high voltage insulation used for armature windings. The principal properties to be looked for are mechanical strength, resistance to abrasion and resistance to thermal degradation. Electrical strength is also important because field windings are required to withstand a high potential test of ten times rated voltage. Some of the materials used over the years ranged from various kinds of fibers and flake mica composites, to asbestos, fiberglass epoxy or polyester laminates, Nomex and combinations of fiberglass, Nomex and insulating films. New materials have been applied to satisfy demands for better properties as generators grew in size and output, and it is the new materials that have made it possible to obtain more power from smaller machines. Field insulation materials and problems are discussed further.

  17. Magnetic gating of a 2D topological insulator

    NASA Astrophysics Data System (ADS)

    Dang, Xiaoqian; Burton, J. D.; Tsymbal, Evgeny Y.

    2016-09-01

    Deterministic control of transport properties through manipulation of spin states is one of the paradigms of spintronics. Topological insulators offer a new playground for exploring interesting spin-dependent phenomena. Here, we consider a ferromagnetic ‘gate’ representing a magnetic adatom coupled to the topologically protected edge state of a two-dimensional (2D) topological insulator to modulate the electron transmission of the edge state. Due to the locked spin and wave vector of the transport electrons the transmission across the magnetic gate depends on the mutual orientation of the adatom magnetic moment and the current. If the Fermi energy matches an exchange-split bound state of the adatom, the electron transmission can be blocked due to the full back scattering of the incident wave. This antiresonance behavior is controlled by the adatom magnetic moment orientation so that the transmission of the edge state can be changed from 1 to 0. Expanding this consideration to a ferromagnetic gate representing a 1D chain of atoms shows a possibility to control the spin-dependent current of a strip of a 2D topological insulator by magnetization orientation of the ferromagnetic gate.

  18. Superconducting dome in a gate-tuned band insulator.

    PubMed

    Ye, J T; Zhang, Y J; Akashi, R; Bahramy, M S; Arita, R; Iwasa, Y

    2012-11-30

    A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by the fine-tuning of carriers has seldom been seen. We report the observation of a superconducting dome in the temperature-carrier density phase diagram of MoS(2), an archetypal band insulator. By quasi-continuous electrostatic carrier doping achieved through a combination of liquid and solid gating, we revealed a large enhancement in the transition temperature T(c) occurring at optimal doping in the chemically inaccessible low-carrier density regime. This observation indicates that the superconducting dome may arise even in doped band insulators.

  19. Modelling and extraction procedure for gate insulator and fringing gate capacitance components of an MIS structure

    NASA Astrophysics Data System (ADS)

    Tinoco, J. C.; Martinez-Lopez, A. G.; Lezama, G.; Mendoza-Barrera, C.; Cerdeira, A.; Estrada, M.

    2016-07-01

    CMOS technology has been guided by the continuous reduction of MOS transistors used to fabricate integrated circuits. Additionally, the use of high-k dielectrics as well as a metal gate electrode have promoted the development of nanometric MOS transistors. Under this scenario, the proper modelling of the gate capacitance, with the aim of adequately evaluating the dielectric film thickness, becomes challenging for nanometric metal-insulator-semiconductor (MIS) structures due to the presence of extrinsic fringing capacitance components which affect the total gate capacitance. In this contribution, a complete intrinsic-extrinsic model for gate capacitance under accumulation of an MIS structure, together with an extraction procedure in order to independently determine the different capacitance components, is presented. ATLAS finite element simulation has been used to validate the proposed methodology.

  20. Modelling and extraction procedure for gate insulator and fringing gate capacitance components of an MIS structure

    NASA Astrophysics Data System (ADS)

    Tinoco, J. C.; Martinez-Lopez, A. G.; Lezama, G.; Mendoza-Barrera, C.; Cerdeira, A.; Estrada, M.

    2016-07-01

    CMOS technology has been guided by the continuous reduction of MOS transistors used to fabricate integrated circuits. Additionally, the use of high-k dielectrics as well as a metal gate electrode have promoted the development of nanometric MOS transistors. Under this scenario, the proper modelling of the gate capacitance, with the aim of adequately evaluating the dielectric film thickness, becomes challenging for nanometric metal-insulator-semiconductor (MIS) structures due to the presence of extrinsic fringing capacitance components which affect the total gate capacitance. In this contribution, a complete intrinsic–extrinsic model for gate capacitance under accumulation of an MIS structure, together with an extraction procedure in order to independently determine the different capacitance components, is presented. ATLAS finite element simulation has been used to validate the proposed methodology.

  1. Conductance modulation in topological insulator Bi{sub 2}Se{sub 3} thin films with ionic liquid gating

    SciTech Connect

    Son, Jaesung; Banerjee, Karan; Yang, Hyunsoo; Brahlek, Matthew; Koirala, Nikesh; Oh, Seongshik; Lee, Seoung-Ki; Ahn, Jong-Hyun

    2013-11-18

    A Bi{sub 2}Se{sub 3} topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

  2. Gas-controlled dynamic vacuum insulation with gas gate

    DOEpatents

    Benson, David K.; Potter, Thomas F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

  3. Gas-controlled dynamic vacuum insulation with gas gate

    DOEpatents

    Benson, D.K.; Potter, T.F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

  4. Insulator to Metal Transition in WO3 Induced by Electrolyte Gating

    NASA Astrophysics Data System (ADS)

    Leng, Xiang; Pereiro, Juan; Strle, Jure; Bollinger, Anthony; Bozovic, Ivan; Litombe, Nick; Dubuis, Guy; Pavuna, Davor

    2014-03-01

    We have modified the transport properties of thin WO3 films by the electric field effect using ionic liquids and solid electrolytes. Atomically flat films were prepared on different substrates by RF sputtering. The huge electric field that is generated in the double-layer induces an extraordinarily large change of the mobile charge carrier density in the sample. The sheet resistance of the gated film drops by more than 10 orders of magnitude at the lowest temperature, and a clear insulator-to-metal transition is observed. The thickness dependence has been studied and the mechanism of doping by electrolyte gating will be discussed. X.L. was supported by the Center for Emergent Superconductivity, an Energy Frontier Research Center funded by the US Department of Energy. I.B. and A.B. were supported by the U.S. Department of Energy.

  5. Vortices and gate-tunable bound states in a topological insulator coupled to superconducting leads

    NASA Astrophysics Data System (ADS)

    Finck, Aaron; Kurter, C.; Hor, Y. S.; van Harlingen, D. J.

    2014-03-01

    It has been predicted that zero energy Majorana bound states can be found in the core of vortices within topological superconductors. Here, we report on Andreev spectroscopy measurements of the topological insulator Bi2Se3 with a normal metal lead and one or more niobium leads. The niobium induces superconductivity in the Bi2Se3 through the proximity effect, leading to both signatures of Andreev reflection and a prominent re-entrant resistance effect. When a large magnetic field is applied perpendicular to the surface of the Bi2Se3, we observe multiple abrupt changes in the subgap conductance that are accompanied by sharp peaks in the dynamical resistance. These peaks are very sensitive to changes in magnetic field and disappear at temperatures associated with the critical temperature of the induced superconductivity. The appearance of the transitions and peaks can be tuned by a top gate. At high magnetic fields, we also find evidence of gate-tunable states, which can lead to stable zero-bias conductance peaks. We interpret our results in terms of a transition occurring within the proximity effect region of the topological insulator, likely due to the formation of vortices. We acknowledge support from Microsoft Project Q.

  6. Gate-tunable tunneling resistance in graphene/topological insulator vertical junctions

    NASA Astrophysics Data System (ADS)

    Zhang, Liang; Yan, Yuan; Wu, Han-Chun; Liao, Zhi-Min; Yu, Da-Peng

    The emergence of graphene-based vertical heterostructures, especially stacked by various layered materials, opens up new promising possibilities for investigations and applications. The junction based on two famous Dirac materials, graphene and topological insulator, Bi2Se3, can considerably enlarge the family of van der Waals heterostructures, while the experimental approach to obtain controllable interface of these junctions is still a challenge. Here we show the experimental realization of the vertical heterojunction between Bi2Se3 and monolayer graphene. The tunneling-mediated quantum oscillations are identified to arise from several two-dimensional conducting layers. The electrostatic field induced by back gate voltage, as well as the magnetic field, is applied to tailor the available density of states near the Fermi surface. We observe exotic gate-tunable tunneling resistance in high magnetic field, which is attributed to semimetal-quantum Hall insulator transition in the underlying graphene. This work was supported by MOST (Nos. 2013CB934600, 2013CB932602) and NSFC (Nos. 11274014, 11234001).

  7. Quantum Dot Channel (QDC) FETs with Wraparound II-VI Gate Insulators: Numerical Simulations

    NASA Astrophysics Data System (ADS)

    Jain, F.; Lingalugari, M.; Kondo, J.; Mirdha, P.; Suarez, E.; Chandy, J.; Heller, E.

    2016-11-01

    This paper presents simulations predicting the feasibility of 9-nm wraparound quantum dot channel (QDC) field-effect transistors (FETs). In particular, II-VI lattice-matched layers which reduce the density of interface states, serving as top (tunnel gate), side, and bottom gate insulators, have been simulated. Quantum simulations show FET operation with voltage swing of ~0.2 V. Incorporation of cladded quantum dots, such as SiO x -Si and GeO x -Ge, under the gate tunnel oxide results in electrical transport in one or more quantum dot layers which form a quantum dot superlattice (QDSL). Long-channel QDC FETs have experimental multistate drain current ( I D)-gate voltage ( V G) and drain current ( I D)-drain voltage ( V D) characteristics, which can be attributed to the manifestation of extremely narrow energy minibands formed in the QDSL. An approach for modeling the multistate I D- V G characteristics is reported. The multistate characteristics of QDC FETs permit design of compact two-bit multivalued logic circuits.

  8. Quantum Dot Channel (QDC) FETs with Wraparound II-VI Gate Insulators: Numerical Simulations

    NASA Astrophysics Data System (ADS)

    Jain, F.; Lingalugari, M.; Kondo, J.; Mirdha, P.; Suarez, E.; Chandy, J.; Heller, E.

    2016-08-01

    This paper presents simulations predicting the feasibility of 9-nm wraparound quantum dot channel (QDC) field-effect transistors (FETs). In particular, II-VI lattice-matched layers which reduce the density of interface states, serving as top (tunnel gate), side, and bottom gate insulators, have been simulated. Quantum simulations show FET operation with voltage swing of ~0.2 V. Incorporation of cladded quantum dots, such as SiO x -Si and GeO x -Ge, under the gate tunnel oxide results in electrical transport in one or more quantum dot layers which form a quantum dot superlattice (QDSL). Long-channel QDC FETs have experimental multistate drain current (I D)-gate voltage (V G) and drain current (I D)-drain voltage (V D) characteristics, which can be attributed to the manifestation of extremely narrow energy minibands formed in the QDSL. An approach for modeling the multistate I D-V G characteristics is reported. The multistate characteristics of QDC FETs permit design of compact two-bit multivalued logic circuits.

  9. Ultraflexible and ultrathin polymeric gate insulator for 2 V organic transistor circuits

    NASA Astrophysics Data System (ADS)

    Kondo, Masaya; Uemura, Takafumi; Matsumoto, Takafumi; Araki, Teppei; Yoshimoto, Shusuke; Sekitani, Tsuyoshi

    2016-06-01

    We have developed a high-yield process for fabricating organic transistors with ultraflexible and ultrathin polymeric (parylene) insulators. In a top-contact bottom-gate configuration, an oxygen plasma treatment for a Au gate surface before parylene deposition significantly improved the yield of transistors, enabling the parylene thickness to be reduced to 18 nm. Taking full advantage of the ultraflexible and ultrathin insulator, we have demonstrated 2 V ring oscillator circuits, where the yield was 97% for 360 transistors inside the area of 7 × 7 cm2. The highly reliable ultrathin insulator is useful for large-area circuits with low-voltage organic transistors.

  10. Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on Insulator-on-Silicon substrates with high-k gate-dielectrics

    NASA Astrophysics Data System (ADS)

    Chatterjee, Sulagna; Chattopadhyay, Sanatan

    2016-10-01

    An analytical model including the simultaneous impact of lattice and thermo-elastic constant mismatch-induced stress in nanowires on Insulator-on-Silicon substrate is developed. It is used to calibrate the finite-element based software, ANSYS, which is subsequently employed to estimate process-induced stress in the sequential steps of NW-FET fabrication. The model considers crystal structures and orientations for both the nanowires and substrates. In-plane stress components along nanowire-axis are estimated for different radii and fractions of insertion. Nature of longitudinal stress is observed to change when inserted fraction of nanowires is changed. Effect of various high-k gate-dielectrics is also investigated. A longitudinal tensile stress of 2.4 GPa and compressive stress of 1.89 GPa have been obtained for NW-FETs with 1/4th and 3/4th insertions with La2O3 and TiO2 as the gate-dielectrics, respectively. Therefore, it is possible to achieve comparable values of electron and hole mobility in NW-FETs by judiciously choosing gate-dielectrics and fractional insertion of the nanowires.

  11. Protected gates for topological quantum field theories

    NASA Astrophysics Data System (ADS)

    Beverland, Michael E.; Buerschaper, Oliver; Koenig, Robert; Pastawski, Fernando; Preskill, John; Sijher, Sumit

    2016-02-01

    We study restrictions on locality-preserving unitary logical gates for topological quantum codes in two spatial dimensions. A locality-preserving operation is one which maps local operators to local operators — for example, a constant-depth quantum circuit of geometrically local gates, or evolution for a constant time governed by a geometrically local bounded-strength Hamiltonian. Locality-preserving logical gates of topological codes are intrinsically fault tolerant because spatially localized errors remain localized, and hence sufficiently dilute errors remain correctable. By invoking general properties of two-dimensional topological field theories, we find that the locality-preserving logical gates are severely limited for codes which admit non-abelian anyons, in particular, there are no locality-preserving logical gates on the torus or the sphere with M punctures if the braiding of anyons is computationally universal. Furthermore, for Ising anyons on the M-punctured sphere, locality-preserving gates must be elements of the logical Pauli group. We derive these results by relating logical gates of a topological code to automorphisms of the Verlinde algebra of the corresponding anyon model, and by requiring the logical gates to be compatible with basis changes in the logical Hilbert space arising from local F-moves and the mapping class group.

  12. On-current limitation of high-k gate insulator MOSFETs

    NASA Astrophysics Data System (ADS)

    Shih, Chun-Hsing; Wang, Jhong-Sheng; Chien, Nguyen Dang; Shia, Ruei-Kai

    2012-12-01

    This work explores the limitation of high-k gate insulator on improving the driving currents of MOSFET devices. The use of high-k gate dielectric prevents from the gate tunneling current to have an acceptable equivalent oxide thickness (EOT) in scaled MOSFETs. However, the effectiveness of continued EOT reduction in strengthening gate control is limited strongly by the non-scalability of the quantum effect of inversion layer thickness. Both classical and quantum-mechanical approaches of inversion layer thickness are presented to study the effective gate capacitances and associated on-state drain currents. The enhancements of drain current and gate capacitance generated by high-k gate dielectrics are gradually saturated when a higher permittivity dielectric is applied.

  13. Topological insulator Bi2Te3 nanowire field effect devices

    NASA Astrophysics Data System (ADS)

    Jauregui, Luis A.; Zhang, Genqiang; Wu, Yue; Chen, Yong P.

    2012-02-01

    Bismuth telluride (Bi2Te3) has been studied extensively as one of the best thermoelectric materials and recently shown to be a prototype topological insulator with nontrivial conducting surface states. We have grown Bi2Te3 nanowires by a two-step solution phase reaction and characterized their material and structural properties by XRD, TEM, XPS and EDS. We fabricate both backgated (on SiO2/Si) and top-gated (with ALD high-k gate dielectric such as Al2O3 or HfO2) field effect devices on such nanowires with diameters ˜50nm. Ambipolar field effect and a resistance modulation of up to 600% at low temperatures have been observed. The 4-terminal resistance shows insulating behavior (increasing with decreasing temperature) from 300 K to 50K, then saturates in a plateau for temperatures below 50K, consistent with the presence of metallic surface state. Aharonov--Bohm (AB) oscillations are observed in the magneto-resistance with a magnetic field parallel to the nanowire, providing further evidence of the presence of surface state conduction Finally, a prominent weak anti-localization (WAL) feature that weakens with increasing magnetic field and/or temperature is observed in the magneto-resistance with a magnetic field perpendicular to the nanowire.

  14. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE PAGES

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more » by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  15. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    SciTech Connect

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

  16. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    PubMed Central

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang-Wook; Podzorov, Vitaly

    2014-01-01

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. Here we report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications. PMID:25308251

  17. Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

    NASA Astrophysics Data System (ADS)

    Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

    2010-07-01

    This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

  18. Combined gate-tunable Josephson junctions and normal state transport in Bi2Te3 topological insulator thin films

    NASA Astrophysics Data System (ADS)

    Ngabonziza, Prosper; Stehno, Martin, P.; Myoren, Hiroaki; Brinkman, Alexander

    In recent years, extensive efforts have been made to improve the coupling between topological insulators and s-wave superconductors in topological insulator Josephson devices (TIJDs). Despite significant progress, essential questions remain open such as the bulk contribution to the Josephson critical current or the existence (and number) of 4 π -periodic bound states (Majoranas) in TIJDs. To address these issues, we fabricated Nb/Bi2Te3/Nb Josephson junctions alongside Hall bar devices on MBE-grown Bi2Te3 topological insulator thin films. Using the SrTiO3 [111] substrate as a gate dielectric, we tuned the carrier density electrostatically and measured the Josephson supercurrent and the normal state transport properties of our thin film devices. We identify three gate voltage ranges with distinct behavior: A region of intermediate gate bias where the measured quantities change rapidly with the applied electric field, and two saturation regions for large bias of either polarity. We discuss carrier distribution and band alignment in the material as well as implications for the effective Josephson coupling in TIJDs. This work is financially supported by the Dutch Foundation for Fundamental Research on Matter (FOM), the Netherlands Organization for Scientific Research (NWO), and by the European Research Council (ERC).

  19. Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

    PubMed Central

    Sun, Yi-Lin; Xie, Dan; Xu, Jian-Long; Zhang, Cheng; Dai, Rui-Xuan; Li, Xian; Meng, Xiang-Jian; Zhu, Hong-Wei

    2016-01-01

    Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect. PMID:26980284

  20. Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors.

    PubMed

    Jang, Kwang-Suk; Wee, Duyoung; Kim, Yun Ho; Kim, Jinsoo; Ahn, Taek; Ka, Jae-Won; Yi, Mi Hye

    2013-06-11

    We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semiconductor than is bare polyimde. The field-effect mobility and the on/off current ratio of the ZnO TFT with the YOx/polyimide gate insulator were 0.456 cm(2)/V·s and 2.12 × 10(6), respectively, whereas the ZnO TFT with the polyimide gate insulator was inactive.

  1. Radiation hardening of MOS devices by boron. [for stabilizing gate threshold potential of field effect device

    NASA Technical Reports Server (NTRS)

    Danchenko, V. (Inventor)

    1974-01-01

    A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations.

  2. Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

    SciTech Connect

    Wang, Lijuan Song, Xiaofeng; Liu, Xin; Zhang, Long; Li, Yiping; Yan, Donghang

    2013-12-09

    We have investigated the interfacial and electrical properties of vanadyl-phthalocyanine (VOPc) metal-insulator-semiconductor devices by the measurement of capacitance and conductance. The devices have been fabricated on ordered para-sexiphenyl (p-6P) layer with silicon nitride (SiN{sub x}) as gate insulator. The VOPc/p-6P/SiN{sub x} devices have shown a negligible hysteresis, low series resistance, and high operated frequency. Bulk traps have been distinguished from interface traps by two loss peaks in conductance measurement. Trap densities and distribution of trap energy level have been obtained. The improved properties indicate that VOPc/ p-6P devices with SiN{sub x} insulator hold a great promise of application in flexible displays.

  3. Effect of surface-modified polyimide gate insulator through hybridization on the performance of organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Pyo, Seungmoon; Choi, Joongkeun; Oh, Youngnam; Son, Hyunsam; Yi, Mi Hye

    2006-04-01

    Surface modification of the gate insulator is a key to performance improvement of organic thin-film transistors (OTFTs). To date, the surface modification of a gate insulator is based on a primer or buffer layer deposition on top of a gate insulator. We report an approach to modify the surface of a gate insulator without a primer and/or buffer layer deposition. In order to obtain polymer gate insulators with well-controlled surface properties, a hybridization method was used and some gate insulators were prepared by varying the hybridization ratio of polyimide with a nonpolar octadecyl side chain to poly(amic acid). The surface property of the hybrid gate insulator varies according to the hybridization ratio. We believe that the long alkyl side chain of the hybrids protrudes from the surface, and makes the surface more hydrophobic. The modified hydrophobic surface strongly affects an initial growth mechanism of pentacene and subsequently the performance of OTFTs. The performance of pentacene OTFTs with the hybrids is superior to that of the OTFTs with only poly(amic acid) and exhibited a carrier mobility of 0.94cm2/Vs, an on/off current ratio of around 106, and a subthreshold slope of 3.1V/dec.

  4. Gate insulator effects on the electrical performance of ZnO thin film transistor on a polyethersulphone substrate.

    PubMed

    Lee, Jae-Kyu; Choi, Duck-Kyun

    2012-07-01

    Low temperature processing for fabrication of transistor backplane is a cost effective solution while fabrication on a flexible substrate offers a new opportunity in display business. Combination of both merits is evaluated in this investigation. In this study, the ZnO thin film transistor on a flexible Polyethersulphone (PES) substrate is fabricated using RF magnetron sputtering. Since the selection and design of compatible gate insulator is another important issue to improve the electrical properties of ZnO TFT, we have evaluated three gate insulator candidates; SiO2, SiNx and SiO2/SiNx. The SiO2 passivation on both sides of PES substrate prior to the deposition of ZnO layer was effective to enhance the mechanical and thermal stability. Among the fabricated devices, ZnO TFT employing SiNx/SiO2 stacked gate exhibited the best performance. The device parameters of interest are extracted and the on/off current ratio, field effect mobility, threshold voltage and subthreshold swing are 10(7), 22 cm2/Vs, 1.7 V and 0.4 V/decade, respectively.

  5. Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators.

    PubMed

    Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P

    2016-05-04

    Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at the double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. Such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.

  6. Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

    DOE PAGES

    Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

    2016-05-04

    Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at the doublemore » Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. As a result, such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.« less

  7. Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

    PubMed Central

    Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

    2016-01-01

    Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at the double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. Such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation. PMID:27142344

  8. Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

    NASA Astrophysics Data System (ADS)

    Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

    2016-05-01

    Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at the double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. Such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.

  9. Novel trench gate field stop IGBT with trench shorted anode

    NASA Astrophysics Data System (ADS)

    Xudong, Chen; Jianbing, Cheng; Guobing, Teng; Houdong, Guo

    2016-05-01

    A novel trench field stop (FS) insulated gate bipolar transistor (IGBT) with a trench shorted anode (TSA) is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown voltage. As the simulation results show, the breakdown voltage is improved by a factor of 19.5% with a lower leakage current compared with the conventional FS-IGBT. The turn off time of the proposed structure is 50% lower than the conventional one with less than 9% voltage drop increased at a current density of 150 A/cm2. Additionally, there is no snapback observed. As a result, the TSA-FS-IGBT has a better trade-off relationship between the turn off loss and forward drop. Project supported by the National Natural Science Foundation of China (No. 61274080) and the Postdoctoral Science Foundation of China (No. 2013M541585).

  10. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.

    PubMed

    Movva, Hema C P; Rai, Amritesh; Kang, Sangwoo; Kim, Kyounghwan; Fallahazad, Babak; Taniguchi, Takashi; Watanabe, Kenji; Tutuc, Emanuel; Banerjee, Sanjay K

    2015-10-27

    We demonstrate dual-gated p-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe2) using high work-function platinum source/drain contacts and a hexagonal boron nitride top-gate dielectric. A device topology with contacts underneath the WSe2 results in p-FETs with ION/IOFF ratios exceeding 10(7) and contacts that remain ohmic down to cryogenic temperatures. The output characteristics show current saturation and gate tunable negative differential resistance. The devices show intrinsic hole mobilities around 140 cm(2)/(V s) at room temperature and approaching 4000 cm(2)/(V s) at 2 K. Temperature-dependent transport measurements show a metal-insulator transition, with an insulating phase at low densities and a metallic phase at high densities. The mobility shows a strong temperature dependence consistent with phonon scattering, and saturates at low temperatures, possibly limited by Coulomb scattering or defects. PMID:26343531

  11. Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates.

    PubMed

    Guo, Nan; Hu, Wei-Da; Chen, Xiao-Shuang; Wang, Lin; Lu, Wei

    2013-01-28

    An alternative-grating gated AlGaN/GaN field-effect transistor (FET) is proposed by considering the slit regions to be covered by a highly doped semiconductor acting as supplemental gates. The plasmonic resonant absorption spectra are studied at THz frequencies using the FDTD method. The 2DEGs, under supplemental gates, modulated by a positive voltage, can make the excitation of the higher order plasmon modes under metallic fingers more efficient in comparison to ungated regions in common slit-grating gate transistors. Moreover, the supplemental gates can confine the electric field of dipole oscillation between metallic gate fingers under THz radiation. The competition of the near-field enhancement and screening effect of the supplemental gate fingers results in the intensity of the higher order plasmon resonances being maximized at increased doping concentration. Our results demonstrate the possibility of significant improvement in the excitation of plasmon resonances in FETs for THz detection.

  12. Characterization of Chemical Trends in Magnetically Doped, Electrically Gated Topological Insulator Thin Films

    NASA Astrophysics Data System (ADS)

    Richardella, Anthony; Kandala, Abhinav; Lee, Joon Sue; Fraleigh, Robbie; Samarth, Nitin; Liu, Minhao; Ong, Nai Phuan; Tao, Jing

    2014-03-01

    Interfacing topological insulators (TIs) with magnetism breaks time reversal symmetry and opens a gap in the surface states at the Dirac point. This results in novel phenomena, such as the recently reported quantized conductance at zero applied external magnetic field due to the quantum anomalous Hall effect (QAHE) in Cr doped (BixSb1-x)2 Te3 [C-Z. Chang, et al., Science 340, 167 (2013)]. We have studied magnetically doped (BixSb1-x)2 Te3 thin films grown by MBE on SrTiO3(111) (STO) substrates using Cr, Fe and Mn as magnetic dopants and as a function of the Bi and Sb composition. These films are carefully characterized by XRD, AFM, SQUID magnetometry and TEM. The chemical composition is determined using SIMS, RBS and XRF. Low temperature transport shows a large gate-tunable Hall effect in Cr doped samples and systematically varying longitudinal magneto-conductance as the Fermi energy is tuned through the Dirac point. The origin of ferromagnetism and its dependence on the chemical potential, chemical composition and sample thickness is discussed. Funded by DARPA and ARO-MURI.

  13. Suppression of metal-insulator transition in VO2 by electric field-induced oxygen vacancy formation.

    PubMed

    Jeong, Jaewoo; Aetukuri, Nagaphani; Graf, Tanja; Schladt, Thomas D; Samant, Mahesh G; Parkin, Stuart S P

    2013-03-22

    Electrolyte gating with ionic liquids is a powerful tool for inducing novel conducting phases in correlated insulators. An archetypal correlated material is vanadium dioxide (VO(2)), which is insulating only at temperatures below a characteristic phase transition temperature. We show that electrolyte gating of epitaxial thin films of VO(2) suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 kelvin, even after the ionic liquid is completely removed. We found that electrolyte gating of VO(2) leads not to electrostatically induced carriers but instead to the electric field-induced creation of oxygen vacancies, with consequent migration of oxygen from the oxide film into the ionic liquid. This mechanism should be taken into account in the interpretation of ionic liquid gating experiments.

  14. High temperature study of flexible silicon-on-insulator fin field-effect transistors

    NASA Astrophysics Data System (ADS)

    Diab, Amer; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Hussain, Muhammad M.

    2014-09-01

    We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

  15. Electric field-induced superconducting transition of insulating FeSe thin film at 35 K

    NASA Astrophysics Data System (ADS)

    Hanzawa, Kota; Sato, Hikaru; Hiramatsu, Hidenori; Kamiya, Toshio; Hosono, Hideo

    2016-04-01

    It is thought that strong electron correlation in an insulating parent phase would enhance a critical temperature (Tc) of superconductivity in a doped phase via enhancement of the binding energy of a Cooper pair as known in high-Tc cuprates. To induce a superconductor transition in an insulating phase, injection of a high density of carriers is needed (e.g., by impurity doping). An electric double-layer transistor (EDLT) with an ionic liquid gate insulator enables such a field-induced transition to be investigated and is expected to result in a high Tc because it is free from deterioration in structure and carrier transport that are in general caused by conventional carrier doping (e.g., chemical substitution). Here, for insulating epitaxial thin films (∼10 nm thick) of FeSe, we report a high Tc of 35 K, which is 4× higher than that of bulk FeSe, using an EDLT under application of a gate bias of +5.5 V. Hall effect measurements under the gate bias suggest that highly accumulated electron carrier in the channel, whose area density is estimated to be 1.4 × 1015 cm-2 (the average volume density of 1.7 × 1021 cm-3), is the origin of the high-Tc superconductivity. This result demonstrates that EDLTs are useful tools to explore the ultimate Tc for insulating parent materials.

  16. Electric field-induced superconducting transition of insulating FeSe thin film at 35 K

    PubMed Central

    Hanzawa, Kota; Sato, Hikaru; Hiramatsu, Hidenori; Kamiya, Toshio; Hosono, Hideo

    2016-01-01

    It is thought that strong electron correlation in an insulating parent phase would enhance a critical temperature (Tc) of superconductivity in a doped phase via enhancement of the binding energy of a Cooper pair as known in high-Tc cuprates. To induce a superconductor transition in an insulating phase, injection of a high density of carriers is needed (e.g., by impurity doping). An electric double-layer transistor (EDLT) with an ionic liquid gate insulator enables such a field-induced transition to be investigated and is expected to result in a high Tc because it is free from deterioration in structure and carrier transport that are in general caused by conventional carrier doping (e.g., chemical substitution). Here, for insulating epitaxial thin films (∼10 nm thick) of FeSe, we report a high Tc of 35 K, which is 4× higher than that of bulk FeSe, using an EDLT under application of a gate bias of +5.5 V. Hall effect measurements under the gate bias suggest that highly accumulated electron carrier in the channel, whose area density is estimated to be 1.4 × 1015 cm–2 (the average volume density of 1.7 × 1021 cm–3), is the origin of the high-Tc superconductivity. This result demonstrates that EDLTs are useful tools to explore the ultimate Tc for insulating parent materials. PMID:27035956

  17. Fast computation of a gated dipole field.

    PubMed

    Mengov, George; Georgiev, Kalin; Pulov, Stefan; Trifonov, Trifon; Atanassov, Krassimir

    2006-12-01

    We address the need to develop efficient algorithms for numerical simulation of models, based in part or entirely on adaptive resonance theory. We introduce modifications that speed up the computation of the gated dipole field (GDF) in the Exact ART neural network. The speed increase of our solution amounts to at least an order of magnitude for fields with more than 100 gated dipoles. We adopt a 'divide and rule' approach towards the original GDF differential equations by grouping them into three categories, and modify each category in a separate way. We decouple the slow-dynamics part - the neurotransmitters from the rest of system, solve their equations analytically, and adapt the solution to the remaining fast-dynamics processes. Part of the node activations are integrated by an unsophisticated numerical procedure switched on and off according to rules. The remaining activations are calculated at equilibrium. We implement this logic in a Generalized Net (GN) - a tool for parallel processes simulation which enables a fresh look at developing efficient models. Our software implementation of generalized nets appears to add little computational overhead.

  18. Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Roberts, J. W.; Chalker, P. R.; Lee, K. B.; Houston, P. A.; Cho, S. J.; Thayne, I. G.; Guiney, I.; Wallis, D.; Humphreys, C. J.

    2016-02-01

    We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm-3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm-2 to -6.60 × 1012 cm-2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices.

  19. Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)

    NASA Astrophysics Data System (ADS)

    Choi, Woo Young; Lee, Hyun Kook

    2016-06-01

    The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal-oxide-semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high- k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high- k etching process.

  20. Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

    NASA Astrophysics Data System (ADS)

    Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

    Topological insulators (TI) are a novel class of quantum matter with a gapped insulating bulk yet gapless spin helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film TI devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully-tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity of 4e2 / h at the double Dirac point, a series of ambipolar two-component ''half-integer'' Dirac quantum Hall states and an electron-hole total filling factor ν=0 state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction respectively. Such a system paves the way to explore rich physics ranging from topological magnetoelectric effects to exciton condensation. DARPA MESO program.

  1. Quantum and classical magnetoresistance in ambipolar topological insulator transistors with gate-tunable bulk and surface conduction.

    PubMed

    Tian, Jifa; Chang, Cuizu; Cao, Helin; He, Ke; Ma, Xucun; Xue, Qikun; Chen, Yong P

    2014-05-07

    Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials.

  2. Retention and Switching Kinetics of Protonated Gate Field Effect Transistors

    SciTech Connect

    DEVINE,R.A.B.; HERRERA,GILBERT V.

    2000-06-27

    The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETs containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96% after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.

  3. Retention and switching kinetics of protonated gate field effect transistors

    SciTech Connect

    DEVINE,R.A.B.; HERRERA,GILBERT V.

    2000-05-23

    The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETS containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96{percent} after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.

  4. Dependence of sensitivity of biosensor for carbon nanotube field-effect transistor with top-gate structures

    NASA Astrophysics Data System (ADS)

    Abe, Masuhiro; Murata, Katsuyuki; Matsumoto, Kazuhiko

    2010-04-01

    In this study, we used biosensors that employ a top-gate-type carbon nanotube field-effect transistor (CNT-FET) for detecting target proteins in a solution. The dependence of the sensitivity of the biosensor on structural characteristics of the top gate, such as the thicknesses of its insulator and electrode and the relative permittivity of the insulator, was examined by simulations and by experiment which change the thickness of the insulator. Results of calculations performed by the finite element method showed that a thin insulator with a relative permittivity greater than 20 would lead to high sensitivity of the CNT-FET biosensor. Experimental investigation supported this result. The transconductance of a CNT-FET with a 20-nm-thick insulating layer was found to be approximately six times higher than that with 50-nm-thick and 80-nm-thick insulating layers. Moreover, the sensitivity of the CNT-FET biosensor with the 20-nm-thick insulating layer was also higher than that of a CNT-FET with a thicker insulating layer. By the experimental measurements, the influence of insulator thickness on the sensitivity of the biosensor was elucidated for the first time.

  5. Gate-tuned Josephson effect on the surface of a topological insulator.

    PubMed

    Bai, Chunxu; Yang, Yanling

    2014-01-01

    In the study, we investigate the Josephson supercurrent of a superconductor/normal metal/superconductor junction on the surface of a topological insulator, where a gate electrode is attached to the normal metal. It is shown that the Josephson supercurrent not only can be tuned largely by the temperature but also is related to the potential and the length of the weak-link region. Especially, the asymmetry excess critical supercurrent, oscillatory character, and plateau-like structure have been revealed. We except those phenomena that can be observed in the recent experiment.

  6. Characterization of a self-built field-plate gate on InGaP/InGaAs heterojunction doped-channel field-effect transistors

    NASA Astrophysics Data System (ADS)

    Chen, H. R.; Hsu, M. K.; Chiu, S. Y.; Chen, W. T.; Guo, D. F.; Lour, W. S.

    2007-03-01

    Heterojunction doped-channel field-effect transistors (HDCFETs) with a self-built field-plate gate formation were fabricated and proposed in this work. Arrangement of Schottky metal across a step undercut between the Schottky barrier and the insulator-like layer is the key process to produce a self-built field-plate gate. A controllably reduced gate length and a self-built field plate were simultaneously formed. Effects of gate-metal length, field-plate length and insulator thickness on HDCFET performance were also investigated. Simulated results reveal that higher currents, lower electric fields, better device linearity and larger output power are expected by offsetting the Schottky metal towards the drain side. A HDCFET with gate-metal length of 0.4 µm, field-plate length of 0.6 µm and insulator thickness of 120 nm was successfully fabricated for comparison to that with a 1 µm traditional planar gate. Current density (451 mA mm-1), transconductance (225 mS mm-1), breakdown voltages (VBD(DS)/VBD(GD) = 22/-25.5 V), gate-voltage swing (2.24 V), unity current-gain and power-gain frequencies (ft/fmax = 17.2/32 GHz) are improved as compared to those of a 1 µm gate device without field plates. At 1.8 GHz and VDS of 4.0 V, maximum power-added efficiency of 36% with output power of 13.9 dBm and power gain of 8.7 dB was obtained. Saturated output power and linear power gain are 316 mW mm-1 and 13 dB, respectively.

  7. Ultra-High Voltage 4H-SiC Bi-Directional Insulated Gate Bipolar Transistors

    NASA Astrophysics Data System (ADS)

    Chowdhury, Sauvik

    4H- Silicon Carbide (4H-SiC) is an attractive material for power semiconductor devices due to its large bandgap, high critical electric field and high thermal conductivity compared to Silicon (Si). For ultra-high voltage applications (BV > 10 kV), 4H-SiC Insulated Gate Bipolar Transistors (IGBTs) are favored over unipolar transistors due to lower conduction losses. With improvements in SiC materials and processing technology, promising results have been demonstrated in the area of conventional unidirectional 4H-SiC IGBTs, with breakdown voltage ratings up to 27 kV. This research presents the experimental demonstration of the world's first high voltage bi-directional power transistors in 4H-SiC. Traditionally, four (two IGBTs and two diodes) or two (two reverse blocking IGBTs) semiconductor devices are necessary to yield a bidirectional switch. With a monolithically integrated bidirectional switch as presented here, the number of semiconductor devices is reduced to only one, which results in increased reliability and reduced cost of the overall system. Additionally, by using the unique dual gate operation of BD-IGBTs, switching losses can be reduced to a small fraction of that in conventional IGBTs, resulting in increased efficiency. First, the performance limits of SiC IGBTs are calculated by using analytical methods. The performance benefits of SiC IGBTs over SiC unipolar devices and Si IGBTs are quantified. Numerical simulations are used to optimize the unit cell and edge termination structures for a 15 kV SiC BD-IGBT. The effect of different device parameters on BD-IGBT static and switching performance are quantified. Second, the process technology necessary for the fabrication of high voltage SiC BD-IGBTs is optimized. The effect of different process steps on parameters such as breakdown voltage, carrier lifetime, gate oxide reliability, SiO2-SiC interface charge density is quantified. A carrier lifetime enhancement process has been optimized for lightly doped

  8. High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors

    NASA Astrophysics Data System (ADS)

    Colón, Albert; Shi, Junxia

    2014-09-01

    High-κ insulating materials (HfO2, HfO2/Al2O3, HfAlOx, and HfSiOx) were deposited by atomic layer deposition (ALD) on AlGaN/GaN to form Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors (MISHFETs) and were electrically and structurally characterized. The objective of this study is to characterize the interface quality and correlate the results with electrical phenomena for each insulating material. Although there are many studies using HfO2 and Al2O3 on AlGaN, there is limited experimental data using ternary compounds such as HfAlOx or HfSiOx, compared to their binary counterparts. In this work, interface trap density, Dit, was extracted by the conductance method using on-chip metal-insulator-semiconductor heterostructure capacitors (MISHCAPs). HfO2 was measured to have the lowest trap density at low energies on the order of 1012 cm-2 eV-1 and quickly reduced about one order of magnitude less than the others at higher trap energies. HfO2/Al2O3, HfAlOx, and HfSiOx all had similar trap densities on the order of 1012 cm-2 eV-1. Ultra-low gate leakage levels were achieved, especially for HfAlOx on the orders of 10-12 A/mm. Our studies indicate that HfAlOx provides the best electrical characteristics such as lowest gate leakage current, largest channel carrier density and resistance to self-heating effects without the vulnerability to low crystallization temperatures.

  9. Reliability analysis of charge plasma based double material gate oxide (DMGO) SiGe-on-insulator (SGOI) MOSFET

    NASA Astrophysics Data System (ADS)

    Pradhan, K. P.; Sahu, P. K.; Singh, D.; Artola, L.; Mohapatra, S. K.

    2015-09-01

    A novel device named charge plasma based doping less double material gate oxide (DMGO) silicon-germanium on insulator (SGOI) double gate (DG) MOSFET is proposed for the first time. The fundamental objective in this work is to modify the channel potential, electric field and electron velocity for improving leakage current, transconductance (gm) and transconductance generation factor (TGF). Using 2-D simulation, we exhibit that the DMGO-SGOI MOSFET shows higher electron velocity at source side and lower electric field at drain side as compare to ultra-thin body (UTB) DG MOSFET. On the other hand DMGO-SGOI MOSFET demonstrates a significant improvement in gm and TGF in comparison to UTB-DG MOSFET. This work also evaluates the existence of a biasing point i.e. zero temperature coefficient (ZTC) bias point, where the device parameters become independent of temperature. The impact of operating temperature (T) on above said various performance metrics are also subjected to extensive analysis. This further validates the reliability of charge plasma DMGO SGOI MOSFET and its application opportunities involved in designing analog/RF circuits for a wide range of temperature applications.

  10. Effects of bias stress on ZnO nanowire field-effect transistors fabricated with organic gate nanodielectrics

    NASA Astrophysics Data System (ADS)

    Ju, Sanghyun; Janes, David B.; Lu, Gang; Facchetti, Antonio; Marks, Tobin J.

    2006-11-01

    The effects of bias stress (gate stress or drain stress) on nanowire field-effect transistor (NW-FET) stability were investigated as a function of stress bias and stress time. The n-channel NW-FETs used a nanoscopic self-assembled organic gate insulator, and each device contained a single ZnO nanowire. Before stress, the off current is limited by a leakage current in the 1nA range, which increases as the gate to source bias becomes increasingly negative. The devices also exhibited significant changes in threshold voltage (Vth) and off current over 500 repeated measurement sweeps. The leakage current was significantly reduced after gate stress, but not after drain stress. Vth variations observed upon successive bias sweeps for devices following gate stress or drain stress were smaller than the Vth variation of unstressed devices. These observations suggest that gate stress and drain stress modify the ZnO nanowire-gate insulator interface, which can reduce electron trapping at the surface and therefore reduce the off current levels and variations in Vth. These results confirm that gate and drain stresses are effective means to stabilize device operation and provide high performance transistors with impressive reliabilities.

  11. High capacitance, photo-patternable ion gel gate insulators compatible with vapor deposition of metal gate electrodes.

    PubMed

    Choi, Jae-Hong; Gu, Yuanyan; Hong, Kihyon; Xie, Wei; Frisbie, C Daniel; Lodge, Timothy P

    2014-11-12

    A facile fabrication route to pattern high-capacitance electrolyte thin films in electrolyte-gated transistors (EGTs) was demonstrated using a photoinitiated cross-linkable ABA-triblock copolymer ion gel. The azide groups of poly(styrene-r-vinylbenzylazide) (PS-N3) end-blocks can be chemically cross-linked via UV irradiation (λ = 254 nm) in the self-assembly of poly[(styrene-r-vinylbenzylazide)-b-ethylene oxide-b-(styrene-r-vinylbenzylazide)] (SOS-N3) triblock copolymer in the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMI][TFSI]). Impedance spectroscopy and small-angle X-ray scattering revealed that ion transport and microstructure of the ion gel are not affected by UV cross-linking. Using a photoinduced cross-linking strategy, photopatterning of ion gels through a patterned mask was achieved. Employing a photopatterned ion gel as the high-capacitance gate insulator in thin film transistors (TFTs), arrays of TFTs exhibited uniform and high device performance. Specifically, both p-type (poly(3-hexylthiophene)) (P3HT) and n-type (ZnO) transistors displayed high carrier mobility (hole mobility of ∼ 1.4 cm(2)/ (V s) and electron mobility of ∼ 0.7 cm(2)/ (V s) and ON/OFF current ratio (∼ 10(5)) at supply voltages below 2 V. This study suggests that photopatterning is a promising candidate to conveniently incorporate high-capacitance ion gels into TFTs in the fabrication of printed electronics.

  12. Electric-field control of spin-orbit torque in a magnetically doped topological insulator

    NASA Astrophysics Data System (ADS)

    Fan, Yabin; Kou, Xufeng; Upadhyaya, Pramey; Shao, Qiming; Pan, Lei; Lang, Murong; Che, Xiaoyu; Tang, Jianshi; Montazeri, Mohammad; Murata, Koichi; Chang, Li-Te; Akyol, Mustafa; Yu, Guoqiang; Nie, Tianxiao; Wong, Kin L.; Liu, Jun; Wang, Yong; Tserkovnyak, Yaroslav; Wang, Kang L.

    2016-04-01

    Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.

  13. Electric-field control of spin-orbit torque in a magnetically doped topological insulator.

    PubMed

    Fan, Yabin; Kou, Xufeng; Upadhyaya, Pramey; Shao, Qiming; Pan, Lei; Lang, Murong; Che, Xiaoyu; Tang, Jianshi; Montazeri, Mohammad; Murata, Koichi; Chang, Li-Te; Akyol, Mustafa; Yu, Guoqiang; Nie, Tianxiao; Wong, Kin L; Liu, Jun; Wang, Yong; Tserkovnyak, Yaroslav; Wang, Kang L

    2016-04-01

    Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.

  14. Topological Field Theory of Time-Reversal Invariant Insulators

    SciTech Connect

    Qi, Xiao-Liang; Hughes, Taylor; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    We show that the fundamental time reversal invariant (TRI) insulator exists in 4 + 1 dimensions, where the effective field theory is described by the 4 + 1 dimensional Chern-Simons theory and the topological properties of the electronic structure is classified by the second Chern number. These topological properties are the natural generalizations of the time reversal breaking (TRB) quantum Hall insulator in 2 + 1 dimensions. The TRI quantum spin Hall insulator in 2 + 1 dimensions and the topological insulator in 3 + 1 dimension can be obtained as descendants from the fundamental TRI insulator in 4 + 1 dimensions through a dimensional reduction procedure. The effective topological field theory, and the Z{sub 2} topological classification for the TRI insulators in 2+1 and 3+1 dimensions are naturally obtained from this procedure. All physically measurable topological response functions of the TRI insulators are completely described by the effective topological field theory. Our effective topological field theory predicts a number of novel and measurable phenomena, the most striking of which is the topological magneto-electric effect, where an electric field generates a magnetic field in the same direction, with an universal constant of proportionality quantized in odd multiples of the fine structure constant {alpha} = e{sup 2}/hc. Finally, we present a general classification of all topological insulators in various dimensions, and describe them in terms of a unified topological Chern-Simons field theory in phase space.

  15. Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film

    NASA Astrophysics Data System (ADS)

    Kanashima, Takeshi; Katsura, Yuu; Okuyama, Masanori

    2014-01-01

    An organic ferroelectric gate field-effect transistor (FET) memory has been fabricated using an organic semiconductor of rubrene thin film with a high mobility and a gate insulating layer of poly(vinylidene fluoride-tetrafluoroethylene) [P(VDF-TeFE)] thin film. A rubrene thin-film sheet was grown by physical vapor transport (PVT), and placed onto a spin-coated P(VDF-TeFE) thin-film layer, and Au source and drain electrodes were formed on this rubrene thin film. A hysteresis loop of the drain current-gate voltage (ID-VG) characteristic has been clearly observed in the ferroelectric gate FET, and is caused by the ferroelectricity. The maximum drain current is 1.5 × 10-6 A, which is about two orders of magnitude larger than that of the P(VDF-TeFE) gate FET using a pentacene thin film. Moreover, the mobility of this organic ferroelectric gate FET using rubrene thin film is 0.71 cm2 V-1 s-1, which is 35 times larger than that of the FET with pentacene thin film.

  16. A novel 3D embedded gate field effect transistor - Screen-grid FET - Device concept and modelling

    NASA Astrophysics Data System (ADS)

    Fobelets, K.; Ding, P. W.; Velazquez-Perez, J. E.

    2007-05-01

    A novel 3D field effect transistor on SOI - screen-grid FET (SGrFET) - is proposed and an analysis of its DC behaviour is presented by means of 2D TCAD analysis. The novel feature of the SGrFET is the design of 3D insulated gate cylinders embedded in the SOI body. This novel gate topology improves efficiency and allows great flexibility in device and gate geometry to optimize DC performance. The floating body effect is avoided and the double gating row configuration controls short channel effects. The traditional intimate relationship between gate length and source-drain distance is removed, resulting in easy control of drain induced barrier lowering, improved output conductance and ideal sub-threshold slope. The separation between the gate fingers in each row is the key factor to optimize the performance, whilst downscaling of the source-drain distance and oxide thickness is not essential from an operational point of view. The device exhibits a huge potential in low power electronics as given by an efficiency of transconductance " gm/ Id" of 39 S/A at VDS = 100 mV over a large gate voltage range and at a source-drain distance of 825 nm. We present the modelling results of the influence of gate cylinder distribution in the channel, channel doping, gate oxide thickness, gate finger distance and source-drain distance on the characteristics of the device.

  17. Sandwich double gate vertical tunneling field-effect transistor

    NASA Astrophysics Data System (ADS)

    Wang, Ying; Zhang, Wen-hao; Yu, Cheng-hao; Cao, Fei

    2016-05-01

    In this work, a sandwich vertical tunnel field effect transistor (SDG-VTFET) is presented and studied. Since the dominant carrier tunneling of SDG-VFET occurs in a direction that is in line with the gate field, high ON-state current and steep subthreshold slope are observed. Comparisons between SDG-VFET and double gate tunnel field effect transistor are made to clarify advantages of SDG-VTFET. The simulation results of our work show that SDG-VTFET has stronger gate control, steeper subthreshold slope and higher ON-state current. The device plays a promising candidate for future low power circuit applications.

  18. Switching a normal insulator into a topological insulator via electric field with application to phosphorene.

    PubMed

    Liu, Qihang; Zhang, Xiuwen; Abdalla, L B; Fazzio, Adalberto; Zunger, Alex

    2015-02-11

    The study of topological insulators has generally involved search of materials that have this property as an innate quality, distinct from normal insulators. Here we focus on the possibility of converting a normal insulator into a topological one by application of an external electric field that shifts different bands by different energies and induces a specific band inversion, which leads to a topological state. Phosphorene is a two-dimensional (2D) material that can be isolated through mechanical exfoliation from layered black phosphorus, but unlike graphene and silicene, single-layer phosphorene has a large band gap (1.5-2.2 eV). Thus, it was unsuspected to exhibit band inversion and the ensuing topological insulator behavior. Using first-principles calculations with applied perpendicular electric field F⊥ on few-layer phosphorene we predict a continuous transition from the normal insulator to a topological insulator and eventually to a metal as a function of F⊥. The tuning of topological behavior with electric field would lead to spin-separated, gapless edge states, that is, quantum spin Hall effect. This finding opens the possibility of converting normal insulating materials into topological ones via electric field and making a multifunctional "field effect topological transistor" that could manipulate simultaneously both spin and charge carrier. We use our results to formulate some design principles for looking for other 2D materials that could have such an electrical-induced topological transition.

  19. Design and analysis of polarization independent all-optical logic gates in silicon-on-insulator photonic crystal

    NASA Astrophysics Data System (ADS)

    Rani, Preeti; Kalra, Yogita; Sinha, R. K.

    2016-09-01

    In this paper, we have reported design and analysis of polarization independent all optical logic gates in silicon-on-insulator photonic crystal consisting of two dimensional honeycomb lattices with two different air holes exhibiting photonic band gap for both TE and TM mode in the optical communication window. The proposed structures perform as an AND optical logic gate and all the optical logic gates based on the phenomenon of interference. The response period and bit rate for TE and TM polarizations at a wavelength of 1.55 μm show improved results as reported earlier.

  20. Hopping transport and the Hall effect near the insulator-metal transition in electrochemically gated poly(3-hexylthiophene) transistors.

    PubMed

    Wang, Shun; Ha, Mingjing; Manno, Michael; Daniel Frisbie, C; Leighton, C

    2012-01-01

    Despite 35 years of investigation, much remains to be understood regarding charge transport in semiconducting polymers, including the ultimate limits on their conductivity. Recently developed ion gel gating techniques provide a unique opportunity to study such issues at very high charge carrier density. Here we have probed the benchmark polymer semiconductor poly(3-hexylthiophene) at electrochemically induced three-dimensional hole densities approaching 10(21) cm(-3) (up to 0.2 holes per monomer). Analysis of the hopping conduction reveals a remarkable phenomenon where wavefunction delocalization and Coulomb gap collapse are disrupted by doping-induced disorder, suppressing the insulator-metal transition, even at these extreme charge densities. Nevertheless, at the highest dopings, we observe, for the first time in a polymer transistor, a clear Hall effect with the expected field, temperature and gate voltage dependencies. The data indicate that at such mobilities (~0.8 cm(2)V(-1) s(-1)), despite the extensive disorder, these polymers lie close to a regime of truly diffusive band-like transport.

  1. Microscopic signature of insulator-to-metal transition in highly doped semicrystalline conducting polymers in ionic-liquid-gated transistors

    SciTech Connect

    Tanaka, Hisaaki Nishio, Satoshi; Ito, Hiroshi; Kuroda, Shin-ichi

    2015-12-14

    Electronic state of charge carriers, in particular, in highly doped regions, in thin-film transistors of a semicrystalline conducting polymer poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene), has been studied by using field-induced electron spin resonance (ESR) spectroscopy. By adopting an ionic-liquid gate insulator, a gate-controlled reversible electrochemical hole-doping of the polymer backbone is achieved, as confirmed from the change of the optical absorption spectra. The edge-on molecular orientation in the pristine film is maintained even after the electrochemical doping, which is clarified from the angular dependence of the g value. As the doping level increases, spin 1/2 polarons transform into spinless bipolarons, which is demonstrated from the spin-charge relation showing a spin concentration peak around 1%, contrasting to the monotonic increase in the charge concentration. At high doping levels, a drastic change in the linewidth anisotropy due to the generation of conduction electrons is observed, indicating the onset of metallic state, which is also supported by the temperature dependence of the spin susceptibility and the ESR linewidth. Our results suggest that semicrystalline conducting polymers become metallic with retaining their molecular orientational order, when appropriate doping methods are chosen.

  2. Microscopic signature of insulator-to-metal transition in highly doped semicrystalline conducting polymers in ionic-liquid-gated transistors

    NASA Astrophysics Data System (ADS)

    Tanaka, Hisaaki; Nishio, Satoshi; Ito, Hiroshi; Kuroda, Shin-ichi

    2015-12-01

    Electronic state of charge carriers, in particular, in highly doped regions, in thin-film transistors of a semicrystalline conducting polymer poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene), has been studied by using field-induced electron spin resonance (ESR) spectroscopy. By adopting an ionic-liquid gate insulator, a gate-controlled reversible electrochemical hole-doping of the polymer backbone is achieved, as confirmed from the change of the optical absorption spectra. The edge-on molecular orientation in the pristine film is maintained even after the electrochemical doping, which is clarified from the angular dependence of the g value. As the doping level increases, spin 1/2 polarons transform into spinless bipolarons, which is demonstrated from the spin-charge relation showing a spin concentration peak around 1%, contrasting to the monotonic increase in the charge concentration. At high doping levels, a drastic change in the linewidth anisotropy due to the generation of conduction electrons is observed, indicating the onset of metallic state, which is also supported by the temperature dependence of the spin susceptibility and the ESR linewidth. Our results suggest that semicrystalline conducting polymers become metallic with retaining their molecular orientational order, when appropriate doping methods are chosen.

  3. Excavationless Exterior Foundation Insulation Field Study

    SciTech Connect

    Schirber, T.; Mosiman, G.; Ojczyk, C.

    2014-10-01

    Building science research supports installing exterior (soil side) foundation insulation as the optimal method to enhance the hygrothermal performance of new homes. With exterior foundation insulation, water management strategies are maximized while insulating the basement space and ensuring a more even temperature at the foundation wall. However, such an approach can be very costly and disruptive when applied to an existing home, requiring deep excavation around the entire house. The NorthernSTAR Building America Partnership team implemented an innovative, minimally invasive foundation insulation upgrade technique on an existing home. The approach consisted of using hydrovac excavation technology combined with a liquid insulating foam. The team was able to excavate a continuous 4" wide by 4' to 5' deep trench around the entire house, 128 linear feet, except for one small part under the stoop that was obstructed with concrete debris. The combination pressure washer and vacuum extraction technology also enabled the elimination of large trenches and soil stockpiles normally produced by backhoe excavation. The resulting trench was filled with liquid insulating foam, which also served as a water-control layer of the assembly. The insulation was brought above grade using a liquid foam/rigid foam hybrid system and terminated at the top of the rim joist. Cost savings over the traditional excavation process ranged from 23% to 50%. The excavationless process could result in even greater savings since replacement of building structures, exterior features, utility meters, and landscaping would be minimal or non-existent in an excavationless process.

  4. Excavationless Exterior Foundation Insulation Field Study

    SciTech Connect

    Schirber, T.; Mosiman, G.; Ojczyk, C.

    2014-09-01

    Building science research supports installing exterior (soil side) foundation insulation as the optimal method to enhance the hygrothermal performance of new homes. With exterior foundation insulation, water management strategies are maximized while insulating the basement space and ensuring a more even temperature at the foundation wall. However, such an approach can be very costly and disruptive when applied to an existing home, requiring deep excavation around the entire house. The NorthernSTAR Building America Partnership team implemented an innovative, minimally invasive foundation insulation upgrade technique on an existing home. The approach consisted of using hydrovac excavation technology combined with liquid insulating foam. The team was able to excavate a continuous 4 inches wide by 4 feet to 5 feet deep trench around the entire house, 128 linear feet, except for one small part under the stoop that was obstructed with concrete debris. The combination pressure washer and vacuum extraction technology also enabled the elimination of large trenches and soil stockpiles normally produced by backhoe excavation. The resulting trench was filled with liquid insulating foam, which also served as a water-control layer of the assembly. The insulation was brought above grade using a liquid foam/rigid foam hybrid system and terminated at the top of the rim joist. Cost savings over the traditional excavation process ranged from 23% to 50%. The excavationless process could result in even greater savings since replacement of building structures, exterior features, utility meters, and landscaping would be minimal or non-existent in an excavationless process.

  5. Insulated gate and surface passivation structures for GaN-based power transistors

    NASA Astrophysics Data System (ADS)

    Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu

    2016-10-01

    Recent years have witnessed GaN-based devices delivering their promise of unprecedented power and frequency levels and demonstrating their capability as an able replacement for Si-based devices. High-electron-mobility transistors (HEMTs), a key representative architecture of GaN-based devices, are well-suited for high-power and high frequency device applications, owing to highly desirable III-nitride physical properties. However, these devices are still hounded by issues not previously encountered in their more established Si- and GaAs-based devices counterparts. Metal-insulator-semiconductor (MIS) structures are usually employed with varying degrees of success in sidestepping the major problematic issues such as excessive leakage current and current instability. While different insulator materials have been applied to GaN-based transistors, the properties of insulator/III-N interfaces are still not fully understood. This is mainly due to the difficulty of characterizing insulator/AlGaN interfaces in a MIS HEMT because of the two resulting interfaces: insulator/AlGaN and AlGaN/GaN, making the potential modulation rather complicated. Although there have been many reports of low interface-trap densities in HEMT MIS capacitors, several papers have incorrectly evaluated their capacitance-voltage (C-V) characteristics. A HEMT MIS structure typically shows a 2-step C-V behavior. However, several groups reported C-V curves without the characteristic step at the forward bias regime, which is likely to the high-density states at the insulator/AlGaN interface impeding the potential control of the AlGaN surface by the gate bias. In this review paper, first we describe critical issues and problems including leakage current, current collapse and threshold voltage instability in AlGaN/GaN HEMTs. Then we present interface properties, focusing on interface states, of GaN MIS systems using oxides, nitrides and high-κ dielectrics. Next, the properties of a variety of AlGaN/GaN MIS

  6. 14. IRRIGATION DITCH LEADING FROM GATE 5 TO HONDIUS' FIELDS. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. IRRIGATION DITCH LEADING FROM GATE 5 TO HONDIUS' FIELDS. LOOKING NORTHWEST. - Hondius Water Line, 1.6 miles Northwest of Park headquarters building & 1 mile Northwest of Beaver Meadows entrance station, Estes Park, Larimer County, CO

  7. Nanodiamond vacuum field emission device with gate modulated triode characteristics

    NASA Astrophysics Data System (ADS)

    Hsu, S. H.; Kang, W. P.; Raina, S.; Huang, J. H.

    2013-05-01

    A three-electrode nanodiamond vacuum field emission (VFE) device with gate modulated triode characteristics is developed by integrating nanodiamond emitter with self-aligned silicon gate and anode, employing a mold transfer technique in conjunction with chemical vapor deposition of nanodiamond. Triode behavior showing emission current modulation with high current density at low operating voltages is achieved. A systematic analysis based on modified Fowler-Nordheim theory is used to analyze gate modulated VFE characteristics, confirming the triode field emission mechanism and operating principle. The realization of an efficient VFE microtriode has achieved the fundamental step for further development of vacuum integrated microelectronics.

  8. Effective hydrodynamic field theory and condensation picture of topological insulators

    NASA Astrophysics Data System (ADS)

    Chan, AtMa P. O.; Kvorning, Thomas; Ryu, Shinsei; Fradkin, Eduardo

    2016-04-01

    While many features of topological band insulators are commonly discussed at the level of single-particle electron wave functions, such as the gapless Dirac boundary spectrum, it remains elusive to develop a hydrodynamic or collective description of fermionic topological band insulators in 3+1 dimensions. As the Chern-Simons theory for the 2+1-dimensional quantum Hall effect, such a hydrodynamic effective field theory provides a universal description of topological band insulators, even in the presence of interactions, and that of putative fractional topological insulators. In this paper, we undertake this task by using the functional bosonization. The effective field theory in the functional bosonization is written in terms of a two-form gauge field, which couples to a U (1 ) gauge field that arises by gauging the continuous symmetry of the target system [the U (1 ) particle number conservation]. Integrating over the U (1 ) gauge field by using the electromagnetic duality, the resulting theory describes topological band insulators as a condensation phase of the U (1 ) gauge theory (or as a monopole condensation phase of the dual gauge field). The hydrodynamic description of the surface of topological insulators and the implication of its duality are also discussed. We also touch upon the hydrodynamic theory of fractional topological insulators by using the parton construction.

  9. Metallization of Epitaxial VO2 Films by Ionic Liquid Gating through Initially Insulating TiO2 Layers.

    PubMed

    Passarello, Donata; Altendorf, Simone G; Jeong, Jaewoo; Samant, Mahesh G; Parkin, Stuart S P

    2016-09-14

    Ionic liquid gating has been shown to metallize initially insulating layers formed from several different oxide materials. Of these vanadium dioxide (VO2) is of especial interest because it itself is metallic at temperatures above its metal-insulator transition. Recent studies have shown that the mechanism of ionic liquid gated induced metallization is entirely distinct from that of the thermally driven metal-insulator transition and is derived from oxygen migration through volume channels along the (001) direction of the rutile structure of VO2. Here we show that it is possible to metallize the entire volume of 10 nm thick layers of VO2 buried under layers of rutile titanium dioxide (TiO2) up to 10 nm thick. Key to this process is the alignment of volume channels in the respective oxide layers, which have the same rutile structure with clamped in-plane lattice constants. The metallization of the VO2 layers is accompanied by large structural expansions of up to ∼6.5% in the out-of-plane direction, but the structure of the TiO2 layer is hardly affected by gating. The TiO2 layers become weakly conducting during the gating process, but in contrast to the VO2 layers, the conductivity disappears on exposure to air. Indeed, even after air exposure, X-ray photoelectron spectroscopy studies show that the VO2 films have a reduced oxygen content after metallization. Ionic liquid gating of the VO2 films through initially insulating TiO2 layers is not consistent with conventional models that have assumed the gate induced carriers are of electrostatic origin. PMID:27479461

  10. Electric-field tuning of the surface band structure of topological insulator Sb2Te3 thin films.

    PubMed

    Zhang, Tong; Ha, Jeonghoon; Levy, Niv; Kuk, Young; Stroscio, Joseph

    2013-08-01

    We measured the response of the surface state spectrum of epitaxial Sb(2)Te(3) thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect from bulk carriers vary as a function of film thickness. We observed a gap opening at the Dirac point for films thinner than four quintuple layers, due to the coupling of the top and bottom surfaces. Moreover, the top surface state band gap of the three quintuple layer films was found to be tunable by a back gate, indicating the possibility of observing a topological phase transition in this system. Our results are well explained by an effective model of 3D topological insulator thin films with structure inversion asymmetry, indicating that three quintuple layer Sb(2)Te(3) films are topologically nontrivial and belong to the quantum spin Hall insulator class.

  11. High temperature study of flexible silicon-on-insulator fin field-effect transistors

    SciTech Connect

    Diab, Amer; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Hussain, Muhammad M.

    2014-09-29

    We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (I{sub ds}), gate leakage current (I{sub gs}), transconductance (g{sub m}), and extracted low-field mobility (μ{sub 0}). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

  12. Silicon on Raised Insulator Field Effect Diode Sori-Fed for Alleviating Scaling Problem in Fed

    NASA Astrophysics Data System (ADS)

    Vadizadeh, Mahdi; Fathipour, Morteza; Darvish, Ghafar

    2014-12-01

    One of the main shortcomings in a field effect diode (FED) is its scaling. Use of an oxide layer in the channel is proposed to enhance the control of the gate on the channel carriers. This is the so-called silicon on raised insulator FED (SORI-FFD) structure. The Shockley-Read-Hall (SRH) mechanism is one of the main components of leakage current in FED devices. The potential induced by the gates in the OFF-state of a SORI-FFD, is larger than that induced by the gates of a regular FED. This reduces, SRH recombination rate. Hence, OFF-state characteristics of the SORI-FED device improves. We evaluate the impact of band-to-band tunneling (BTBT) on the electrical characteristics of Modified FED (M-FED).We show that for channel lengths of 35 nm and lower this device does not turn off. While, the proposed structure makes device channel length scaling possible down to 15 nm. We will also compare electrical characteristics of SORI-FED and M-FED using three metrics: gate delay time versus channel length, gate delay time versus ION/IOFF ratio and energy-delay product versus channel length. Benchmarking results show the proposed FED structure provides improvement in ION/IOFF ratio and holds promise for future logic transistor applications.

  13. On field effect studies and superconductor-insulator transition in high-Tc cuprates

    NASA Astrophysics Data System (ADS)

    Dubuis, G.; Bollinger, A. T.; Pavuna, D.; Božović, I.

    2013-07-01

    We summarize previous field effect studies in high- T c cuprates and then discuss our method to smoothly tune the carrier concentration of a cuprate film over a wide range using an applied electric field. We synthesized epitaxial one-unit-cell thick films of La2- x Sr x CuO4 and from them fabricated electric double layer transistor devices utilizing various gate electrolytes. We were able to vary the carrier density by about 0.08 carriers per Cu atom, with the resulting change in T c of 30 K. The superconductor-insulator transition occurred at the critical resistance very close to the quantum resistance for pairs, R Q = h/(2 e)2 = 6.5 kΩ. This is suggestive of a quantum phase transition, possibly driven by quantum phase fluctuations, between a "Bose insulator" and a high- T c superconductor state.

  14. Electron beam assisted field evaporation of insulating nanowires/tubes

    NASA Astrophysics Data System (ADS)

    Blanchard, N. P.; Niguès, A.; Choueib, M.; Perisanu, S.; Ayari, A.; Poncharal, P.; Purcell, S. T.; Siria, A.; Vincent, P.

    2015-05-01

    We demonstrate field evaporation of insulating materials, specifically BN nanotubes and undoped Si nanowires, assisted by a convergent electron beam. Electron irradiation leads to positive charging at the nano-object's apex and to an important increase of the local electric field thus inducing field evaporation. Experiments performed both in a transmission electron microscope and in a scanning electron microscope are presented. This technique permits the selective evaporation of individual nanowires in complex materials. Electron assisted field evaporation could be an interesting alternative or complementary to laser induced field desorption used in atom probe tomography of insulating materials.

  15. Electron beam assisted field evaporation of insulating nanowires/tubes

    SciTech Connect

    Blanchard, N. P. Niguès, A.; Choueib, M.; Perisanu, S.; Ayari, A.; Poncharal, P.; Purcell, S. T.; Siria, A.; Vincent, P.

    2015-05-11

    We demonstrate field evaporation of insulating materials, specifically BN nanotubes and undoped Si nanowires, assisted by a convergent electron beam. Electron irradiation leads to positive charging at the nano-object's apex and to an important increase of the local electric field thus inducing field evaporation. Experiments performed both in a transmission electron microscope and in a scanning electron microscope are presented. This technique permits the selective evaporation of individual nanowires in complex materials. Electron assisted field evaporation could be an interesting alternative or complementary to laser induced field desorption used in atom probe tomography of insulating materials.

  16. Structured-gate organic field-effect transistors

    NASA Astrophysics Data System (ADS)

    Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

    2012-06-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

  17. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, T. J.

    2006-10-01

    High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10-5A/cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA/mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

  18. Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

    NASA Astrophysics Data System (ADS)

    Jia, Li; Cui, Yu; Li, Wang; Qingbin, Liu; Zezhao, He; Shujun, Cai; Zhihong, Feng

    2014-07-01

    A scalable self-aligned approach is employed to fabricate monolayer graphene field-effect transistors on semi-insulated 4H-SiC (0001) substrates. The self-aligned process minimized access resistance and parasitic capacitance. Self-oxidized Al2O3, formed by deposition of 2 nm Al followed by exposure in air to be oxidized, is used as gate dielectric and shows excellent insulation. An intrinsic cutoff frequency of 34 GHz and maximum oscillation frequency of 36.4 GHz are realized for the monolayer graphene field-effect transistor with a gate length of 0.2 μm. These studies show a pathway to fabricate graphene transistors for future applications in ultra-high frequency circuits.

  19. Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films

    NASA Astrophysics Data System (ADS)

    Chang, CuiZu; Liu, MinHao; Zhang, ZuoCheng; Wang, YaYu; He, Ke; Xue, QiKun

    2016-03-01

    High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 (111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2- x Cr x Te3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb2- x Cr x Te3 films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.

  20. Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors

    NASA Astrophysics Data System (ADS)

    Ryuichi Sugie,; Takeshi Mitani,; Masanobu Yoshikawa,; Yoshiharu Iwata,; Ryohei Satoh,

    2010-04-01

    Cross-sectional cathodoluminescence (CL) measurements were applied to the study of electron-irradiated punch-through insulated gate bipolar transistors (IGBTs) to investigate the relationship between radiative recombination centers and electrical characteristics. IGBTs were additionally annealed at temperatures of 200-400 °C for 1 h. As annealing temperature rose, collector-emitter saturation voltage (VCES) decreased and current fall time (tf) increased. The cross-sectional CL measurements showed sharp luminescent peaks at 1018 meV (W or I1), 1040 meV (X or I3), and 790 meV (C) and a broad band at approximately 0.90-1.05 eV. As annealing temperature rose, the intensity of the W line decreased and that of the X line increased, suggesting that small self-interstitial clusters agglomerate and form stable, large self-interstitial clusters reducing the total number of self-interstitial clusters. The C line, which originated from an interstitial oxygen and carbon complex, showed no significant change. We consider that self-interstitial clusters play important roles in the electrical characteristics of lifetime-controlled IGBTs.

  1. Gate control of ferromagnetic insulating phase in lightly-doped La0.875Sr0.125MnO3-δ film

    NASA Astrophysics Data System (ADS)

    Kuang, H.; Wang, J.; Hu, F. X.; Zhao, Y. Y.; Liu, Y.; Wu, R. R.; Sun, J. R.; Shen, B. G.

    2016-02-01

    The electric field effect on the lightly doped La0.875Sr0.125MnO3-δ (LSMO) thin film in electric double-layer transistors was investigated by measuring transport properties of the film under various gate voltages. It was found that the positive gate bias leads to an increase of the charge-orbital ordering (COO) transition temperature and a decrease of the Curie temperature TC, indicating the suppression of ferromagnetic metal (FMM) phases and preference of COO/ferromagnetic insulator (FMI) with the hole depletion by gate bias. Such different electric field effects can be ascribed to the weakening of the ferromagnetic interaction and enhancement of Jahn-Teller (JT) distortion caused by the transformation of JT inactive Mn4+-ions to JT active Mn3+-ions. Moreover, a step-like increase in the high temperature region of the ρ-T curve, which is related to the transition of cooperative JT distortion, was found to develop with increasing the positive bias, indicating that the cooperative JT distorted phase is stabilized by the depletion of holes in LSMO film. These results demonstrate that the modulation of holes via electric field strongly affects the balance between energy gains of different interactions and thus produce different effects on the competing FMI, FMM, and cooperative JT distorted phases in LSMO film.

  2. Electrolyte-gated charge transport in molecularly linked gold nanoparticle films: The transition from a Mott insulator to an exotic metal with strong electron-electron interactions

    NASA Astrophysics Data System (ADS)

    Tie, M.; Dhirani, A.-A.

    2016-09-01

    Strong electron-electron interactions experienced by electrons as they delocalize are widely believed to play a key role in a range of remarkable phenomena such as high Tc superconductivity, colossal magnetoresistance, and others. Strongly correlated electrons are often described by the Hubbard model, which is the simplest description of a correlated system and captures important gross features of phase diagrams of strongly correlated materials. However, open challenges in this field include experimentally mapping correlated electron phenomena beyond those captured by the Hubbard model, and extending the model accordingly. Here we use electrolyte gating to study a metal-insulator transition (MIT) in a new class of strongly correlated material, namely, nanostructured materials, using 1,4-butanedithiol-linked Au nanoparticle films (NPFs) as an example. Electrolyte gating provides a means for tuning the chemical potential of the materials over a wide range, without significantly modifying film morphology. On the insulating side of the transition, we observe Efros-Shklovskii variable range hopping and a soft Coulomb gap, evidencing the importance of Coulomb barriers. On the metallic side of the transition, we observe signatures of strong disorder mediated electron-electron correlations. Gating films near MIT also reveal a zero-bias conductance peak, which we attribute to a resonance at the Fermi level predicted by the Hubbard and Anderson impurity models when electrons delocalize and experience strong Coulomb electron-electron interactions. This study shows that by enabling large changes in carrier density, electrolyte gating of Au NPFs is a powerful means for tuning through the Hubbard MIT in NPFs. By revealing the range of behaviours that strongly correlated electrons can exhibit, this platform can guide the development of an improved understanding of correlated materials.

  3. Electrolyte-gated charge transport in molecularly linked gold nanoparticle films: The transition from a Mott insulator to an exotic metal with strong electron-electron interactions.

    PubMed

    Tie, M; Dhirani, A-A

    2016-09-14

    Strong electron-electron interactions experienced by electrons as they delocalize are widely believed to play a key role in a range of remarkable phenomena such as high Tc superconductivity, colossal magnetoresistance, and others. Strongly correlated electrons are often described by the Hubbard model, which is the simplest description of a correlated system and captures important gross features of phase diagrams of strongly correlated materials. However, open challenges in this field include experimentally mapping correlated electron phenomena beyond those captured by the Hubbard model, and extending the model accordingly. Here we use electrolyte gating to study a metal-insulator transition (MIT) in a new class of strongly correlated material, namely, nanostructured materials, using 1,4-butanedithiol-linked Au nanoparticle films (NPFs) as an example. Electrolyte gating provides a means for tuning the chemical potential of the materials over a wide range, without significantly modifying film morphology. On the insulating side of the transition, we observe Efros-Shklovskii variable range hopping and a soft Coulomb gap, evidencing the importance of Coulomb barriers. On the metallic side of the transition, we observe signatures of strong disorder mediated electron-electron correlations. Gating films near MIT also reveal a zero-bias conductance peak, which we attribute to a resonance at the Fermi level predicted by the Hubbard and Anderson impurity models when electrons delocalize and experience strong Coulomb electron-electron interactions. This study shows that by enabling large changes in carrier density, electrolyte gating of Au NPFs is a powerful means for tuning through the Hubbard MIT in NPFs. By revealing the range of behaviours that strongly correlated electrons can exhibit, this platform can guide the development of an improved understanding of correlated materials. PMID:27634270

  4. Golden Gate Park, Chalet Recreation Field, Bounded by John F. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Golden Gate Park, Chalet Recreation Field, Bounded by John F. Kennedy Drive to the north and east, former Richmond-Sunset Sewage Treatment Plant to the south, and the Old Railroad Trail to the west, San Francisco, San Francisco County, CA

  5. A pH sensor with a double-gate silicon nanowire field-effect transistor

    NASA Astrophysics Data System (ADS)

    Ahn, Jae-Hyuk; Kim, Jee-Yeon; Seol, Myeong-Lok; Baek, David J.; Guo, Zheng; Kim, Chang-Hoon; Choi, Sung-Jin; Choi, Yang-Kyu

    2013-02-01

    A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the two gates. One gate is a driving gate which controls the current flow, and the other is a supporting gate which amplifies the shift of the threshold voltage, which is a sensing metric, and which arises from changes in the pH. The pH signal is also amplified through modulation of the gate oxide thickness.

  6. Evolution of Insulator-Metal Phase Transitions in Epitaxial Tungsten Oxide Films during Electrolyte-Gating.

    PubMed

    Nishihaya, Shinichi; Uchida, Masaki; Kozuka, Yusuke; Iwasa, Yoshihiro; Kawasaki, Masashi; Nishihaya, S; Uchida, M; Kozuka, Y; Iwasa, Y; Kawasaki, M; Iwasa, Y; Kawasaki, M

    2016-08-31

    An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting A-site vacant perovskite WO3 epitaxial thin films as a channel material and two different electrolytes as gating agent. In situ measurements of X-ray diffraction and channel resistance performed during the gating revealed that in both the cases WO3 thin film reaches a new metallic state through multiple phase transitions, accompanied by the change in out-of-plane lattice constant. Electrons are electrostatically accumulated from the interface side with an ionic liquid, while alkaline metal ions are more uniformly intercalated into the film with a polymer electrolyte. We systematically demonstrate this difference in the electrostatic and electrochemical processes, by comparing doped carrier density, lattice deformation behavior, and time constant of the phase transitions. PMID:27502546

  7. Field-emission cathodes of glass-insulated microwire

    SciTech Connect

    Donika, F.G.; Miglei, D.F.; Smyslov, V.V.

    1987-08-01

    A method is described for fabricating field-emission cathodes in glass insulation. Cathodes with nickel and germanium emitters have packing densities of 10/sup 2/-10/sup 4/ pieces/mm/sup 2/ and point radii of curvature of 0.1-1 ..mu..m.

  8. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

    SciTech Connect

    Liu, J. W.; Liao, M. Y.; Imura, M.; Watanabe, E.; Oosato, H.; Koide, Y.

    2014-08-25

    A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO{sub 3} layer and a thin atomic-layer-deposited Al{sub 2}O{sub 3} buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be −40.7 mA·mm{sup −1}, 13.2 ± 0.1 mS·mm{sup −1}, and −3.1 ± 0.1 V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to −10.0 V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

  9. Magnetic field-induced helical mode and topological transitions in a topological insulator nanoribbon

    NASA Astrophysics Data System (ADS)

    Jauregui, Luis A.; Pettes, Michael T.; Rokhinson, Leonid P.; Shi, Li; Chen, Yong P.

    2016-04-01

    The spin-helical Dirac fermion topological surface states in a topological insulator nanowire or nanoribbon promise novel topological devices and exotic physics such as Majorana fermions. Here, we report local and non-local transport measurements in Bi2Te3 topological insulator nanoribbons that exhibit quasi-ballistic transport over ˜2 μm. The conductance versus axial magnetic flux Φ exhibits Aharonov-Bohm oscillations with maxima occurring alternately at half-integer or integer flux quanta (Φ0 = h/e, where h is Planck's constant and e is the electron charge) depending periodically on the gate-tuned Fermi wavevector (kF) with period 2π/C (where C is the nanoribbon circumference). The conductance versus gate voltage also exhibits kF-periodic oscillations, anti-correlated between Φ = 0 and Φ0/2. These oscillations enable us to probe the Bi2Te3 band structure, and are consistent with the circumferentially quantized topological surface states forming a series of one-dimensional subbands, which undergo periodic magnetic field-induced topological transitions with the disappearance/appearance of the gapless Dirac point with a one-dimensional spin helical mode.

  10. Magnetic field-induced helical mode and topological transitions in a topological insulator nanoribbon.

    PubMed

    Jauregui, Luis A; Pettes, Michael T; Rokhinson, Leonid P; Shi, Li; Chen, Yong P

    2016-04-01

    The spin-helical Dirac fermion topological surface states in a topological insulator nanowire or nanoribbon promise novel topological devices and exotic physics such as Majorana fermions. Here, we report local and non-local transport measurements in Bi2Te3 topological insulator nanoribbons that exhibit quasi-ballistic transport over ∼2 μm. The conductance versus axial magnetic flux Φ exhibits Aharonov-Bohm oscillations with maxima occurring alternately at half-integer or integer flux quanta (Φ0 = h/e, where h is Planck's constant and e is the electron charge) depending periodically on the gate-tuned Fermi wavevector (kF) with period 2π/C (where C is the nanoribbon circumference). The conductance versus gate voltage also exhibits kF-periodic oscillations, anti-correlated between Φ = 0 and Φ0/2. These oscillations enable us to probe the Bi2Te3 band structure, and are consistent with the circumferentially quantized topological surface states forming a series of one-dimensional subbands, which undergo periodic magnetic field-induced topological transitions with the disappearance/appearance of the gapless Dirac point with a one-dimensional spin helical mode.

  11. Magnetic field-induced helical mode and topological transitions in a topological insulator nanoribbon

    NASA Astrophysics Data System (ADS)

    Jauregui, Luis A.; Pettes, Michael T.; Rokhinson, Leonid P.; Shi, Li; Chen, Yong P.

    2016-04-01

    The spin-helical Dirac fermion topological surface states in a topological insulator nanowire or nanoribbon promise novel topological devices and exotic physics such as Majorana fermions. Here, we report local and non-local transport measurements in Bi2Te3 topological insulator nanoribbons that exhibit quasi-ballistic transport over ∼2 μm. The conductance versus axial magnetic flux Φ exhibits Aharonov–Bohm oscillations with maxima occurring alternately at half-integer or integer flux quanta (Φ0 = h/e, where h is Planck's constant and e is the electron charge) depending periodically on the gate-tuned Fermi wavevector (kF) with period 2π/C (where C is the nanoribbon circumference). The conductance versus gate voltage also exhibits kF-periodic oscillations, anti-correlated between Φ = 0 and Φ0/2. These oscillations enable us to probe the Bi2Te3 band structure, and are consistent with the circumferentially quantized topological surface states forming a series of one-dimensional subbands, which undergo periodic magnetic field-induced topological transitions with the disappearance/appearance of the gapless Dirac point with a one-dimensional spin helical mode.

  12. Ambipolar insulator-to-metal transition in black phosphorus by ionic-liquid gating.

    PubMed

    Saito, Yu; Iwasa, Yoshihiro

    2015-03-24

    We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of ∼5 × 10(3). The band gap was determined as ≅0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was ∼190 cm(2)/(V s) at 170 K, which is 1 order of magnitude larger than the electron mobility. By inducing an ultrahigh carrier density of ∼10(14) cm(-2), an electric-field-induced transition from the insulating state to the metallic state was realized, due to both electron and hole doping. Our results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.

  13. Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics.

    PubMed

    Ju, Sanghyun; Lee, Kangho; Janes, David B; Yoon, Myung-Han; Facchetti, Antonio; Marks, Tobin J

    2005-11-01

    The development of nanowire transistors enabled by appropriate dielectrics is of great interest for flexible electronic and display applications. In this study, nanowire field-effect transistors (NW-FETs) composed of individual ZnO nanowires are fabricated using a self-assembled superlattice (SAS) as the gate insulator. The 15-nm SAS film used in this study consists of four interlinked layer-by-layer self-assembled organic monolayers and exhibits excellent insulating properties with a large specific capacitance, 180 nF/cm2, and a low leakage current density, 1 x 10(-8) A/cm2. SAS-based ZnO NW-FETs display excellent drain current saturation at Vds = 0.5 V, a threshold voltage (Vth) of -0.4 V, a channel mobility of approximately 196 cm2/V s, an on-off current ratio of approximately 10(4), and a subthreshold slope of 400 mV/dec. For comparison, ZnO NW-FETs are also fabricated using 70-nm SiO2 as the gate insulator. Implementation of the SAS gate dielectric reduces the NW-FET operating voltage dramatically with more than 1 order of magnitude enhancement of the on-current. These results strongly indicate that SAS-based ZnO NW-FETs are promising candidates for future flexible display and logic technologies.

  14. Assessment of performance potential of MoS2-based topological insulator field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, Leitao; Guo, Jing

    2015-09-01

    It was suggested that single-layer MoS2 at the 1T' phase is a topological insulator whose electronic structure can be modulated by a vertical electric field for field-effect transistor (FET) applications [X. Qian, J. Liu, L. Fu, and J. Li, Science 346, 1344 (2014)]. In this work, performance potential of FETs based on vertical field modulation of the topological edge states is assessed by using quantum transport device simulations. To perform efficient device simulations, a phenomenological Hamiltonian is first proposed and validated to capture the effects of electric fields. Because the ON-state conductance is determined by transport through gapless edge states with a long scattering mean free path and the OFF-state conductance by transport through the gapped bulk states, the ON/OFF ratio is sensitive to the channel length, which is different from conventional FETs. Although a high vertical electric field is required to modulate the topological edge state, a reasonably small subthreshold swing of 131 mV/dec can still be achieved for a practical value of the gate insulator thickness.

  15. In–Ga–Zn–O thin film transistor with HfO{sub 2} gate insulator prepared using various O{sub 2}/(Ar + O{sub 2}) gas ratios

    SciTech Connect

    Jo, Young Je; Lee, In-Hwan; Kwak, Joon Seop

    2012-10-15

    We have investigated the effect of the deposition of an HfO{sub 2} thin film as a gate insulator with different O{sub 2}/(Ar + O{sub 2}) gas ratios using RF magnetron sputtering. The HfO{sub 2} thin film affected the device performance of amorphous indium–gallium–zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O{sub 2}/(Ar + O{sub 2}) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm{sup 2}/(V s). Compared to those prepared with an O{sub 2}/(Ar + O{sub 2}) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm{sup 2}/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O{sub 2}/(Ar + O{sub 2}) gas ratio.

  16. SEMICONDUCTOR DEVICES Low voltage copper phthalocyanine organic thin film transistors with a polymer layer as the gate insulator

    NASA Astrophysics Data System (ADS)

    Xueqiang, Liu; Weihong, Bi; Tong, Zhang

    2010-12-01

    Low voltage organic thin film transistors (OTFTs) were created using polymethyl-methacrylate-co g-lyciclyl-methacrylate (PMMA-GMA) as the gate dielectric. The OTFTs performed acceptably at supply voltages of about 10 V. From a densely packed copolymer brush, a leakage current as low as 2 × 10-8 A/cm2 was obtained. From the measured capacitance—insulator frequency characteristics, a dielectric constant in the range 3.9-5.0 was obtained. By controlling the thickness of the gate dielectric, the threshold voltage was reduced from -3.5 to -2.0 V. The copper phthalocyanine (CuPc) based organic thin film transistor could be operated at low voltage and 1.2 × 10-3 cm2/(V·s) mobility.

  17. Metallic 2D Surface State of Silicon by Ionic Liquid gating and observation of Reentrant Insulating behavior

    NASA Astrophysics Data System (ADS)

    Nelson, J. J.; Goldman, A. M.

    2015-03-01

    Metal insulator transitions are usually observed in high mobility and low carrier density 2D electron systems. There are several open questions regarding the metallic state including its existence in the limit of zero temperature. The current experimental focus is on the production of higher mobility samples to push the critical carrier density to even lower values, which will increase the effects of the Coulomb interaction. Here we report an unexpected result, the observation of the onset of a metallic state at high carrier densities in silicon gated with the ionic liquid DEME-TFSI. In addition we have observed a return to the insulating state as the carrier density was further increased. This reentrant insulting behavior is an effect that was recently predicted. Supported in part by NSF/DMR-1263316. Part of this work was carried out at the Minnesota Nanocenter.

  18. Enhancement of accelerating field of microwave cavities by magnetic insulation

    SciTech Connect

    Stratakis, D.; Gallardo, J.; Palmer, R.B.

    2011-04-15

    Limitations on the maximum achievable accelerating gradient of microwave cavities can strongly influence the performance, length, and cost of particle accelerators. Gradient limitations are widely believed to be initiated by electron emission from the cavity surfaces. Here, we show that the deleterious effects of field emission are effectively suppressed by applying a tangential magnetic field to the cavity walls. With the aid of numerical simulations we compute the field strength required to insulate an 805 MHz cavity and estimate the cavity's tolerances to typical experimental errors such as magnet misalignments and positioning errors. Then, we review an experimental program, currently under progress, to further study the concept. Finally, we report on two specific examples that illustrate the feasibility of magnetic insulation into prospective particle accelerator applications.

  19. Superconductivity in an Organic Insulator at Very High Magnetic Fields

    SciTech Connect

    Balicas, L.; Brooks, J. S.; Storr, K.; Uji, S.; Tokumoto, M.; Tanaka, H.; Kobayashi, H.; Kobayashi, A.; Barzykin, V.; Gor'kov, L. P.

    2001-08-06

    We investigate by electrical transport the field-induced superconducting state (FISC) in the organic conductor {lambda}-(BETS){sub 2}FeCl{sub 4} . Below 4K, antiferromagnetic-insulator, metallic, and eventually superconducting (FISC) ground states are observed with increasing in-plane magnetic field. The FISC state survives between 18 and 41T and can be interpreted in terms of the Jaccarino-Peter effect, where the external magnetic field compensates the exchange field of aligned Fe{sup 3+} ions. We further argue that the Fe{sup 3+} moments are essential to stabilize the resulting singlet, two-dimensional superconducting state.

  20. Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating.

    PubMed

    Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; He, Xi; Bollinger, Anthony T; Pavuna, Davor; Pindak, Ron; Božović, Ivan

    2016-01-01

    We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film (ground) and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and equatorial oxygen atoms were displaced towards the surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of equatorial oxygen atoms. PMID:27578237

  1. Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors.

    PubMed

    Stoesser, Anna; von Seggern, Falk; Purohit, Suneeti; Nasr, Babak; Kruk, Robert; Dehm, Simone; Di Wang; Hahn, Horst; Dasgupta, Subho

    2016-10-14

    Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of individual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm(2) V(-1) s(-1). PMID:27609560

  2. Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors

    NASA Astrophysics Data System (ADS)

    Stoesser, Anna; von Seggern, Falk; Purohit, Suneeti; Nasr, Babak; Kruk, Robert; Dehm, Simone; Wang, Di; Hahn, Horst; Dasgupta, Subho

    2016-10-01

    Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of individual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm2 V-1 s-1.

  3. Oxygen Displacement in Cuprates under IonicLiquid Field-Effect Gating

    DOE PAGES

    Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; He, Xi; Bollinger, Anthony T.; Pavuna, Davor; Pindak, Ron; Bozovic, Ivan

    2016-08-15

    We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were nomore » structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and planar oxygen atoms were displaced towards the sample surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of planar oxygen atoms.« less

  4. Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating.

    PubMed

    Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; He, Xi; Bollinger, Anthony T; Pavuna, Davor; Pindak, Ron; Božović, Ivan

    2016-08-31

    We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film (ground) and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and equatorial oxygen atoms were displaced towards the surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of equatorial oxygen atoms.

  5. Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating

    NASA Astrophysics Data System (ADS)

    Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; He, Xi; Bollinger, Anthony T.; Pavuna, Davor; Pindak, Ron; Božović, Ivan

    2016-08-01

    We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film (ground) and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and equatorial oxygen atoms were displaced towards the surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of equatorial oxygen atoms.

  6. Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating

    PubMed Central

    Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; He, Xi; Bollinger, Anthony T.; Pavuna, Davor; Pindak, Ron; Božović, Ivan

    2016-01-01

    We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film (ground) and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and equatorial oxygen atoms were displaced towards the surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of equatorial oxygen atoms. PMID:27578237

  7. Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors.

    PubMed

    Stoesser, Anna; von Seggern, Falk; Purohit, Suneeti; Nasr, Babak; Kruk, Robert; Dehm, Simone; Di Wang; Hahn, Horst; Dasgupta, Subho

    2016-10-14

    Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of individual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm(2) V(-1) s(-1).

  8. Topological BF field theory description of topological insulators

    SciTech Connect

    Cho, Gil Young; Moore, Joel E.

    2011-06-15

    Research Highlights: > We show that a BF theory is the effective theory of 2D and 3D topological insulators. > The non-gauge-invariance of the bulk theory yields surface terms for a bosonized Dirac fermion. > The 'axion' term in electromagnetism is correctly obtained from gapped surfaces. > Generalizations to possible fractional phases are discussed in closing. - Abstract: Topological phases of matter are described universally by topological field theories in the same way that symmetry-breaking phases of matter are described by Landau-Ginzburg field theories. We propose that topological insulators in two and three dimensions are described by a version of abelian BF theory. For the two-dimensional topological insulator or quantum spin Hall state, this description is essentially equivalent to a pair of Chern-Simons theories, consistent with the realization of this phase as paired integer quantum Hall effect states. The BF description can be motivated from the local excitations produced when a {pi} flux is threaded through this state. For the three-dimensional topological insulator, the BF description is less obvious but quite versatile: it contains a gapless surface Dirac fermion when time-reversal-symmetry is preserved and yields 'axion electrodynamics', i.e., an electromagnetic E . B term, when time-reversal symmetry is broken and the surfaces are gapped. Just as changing the coefficients and charges of 2D Chern-Simons theory allows one to obtain fractional quantum Hall states starting from integer states, BF theory could also describe (at a macroscopic level) fractional 3D topological insulators with fractional statistics of point-like and line-like objects.

  9. Carbon nanotube gated lateral resonant tunneling field-effect transistors

    NASA Astrophysics Data System (ADS)

    Wang, D. P.; Perkins, B. R.; Yin, A. J.; Zaslavsky, A.; Xu, J. M.; Beresford, R.; Snider, G. L.

    2005-10-01

    We have produced a lateral resonant tunneling field-effect transistor using a Y-junction multiwalled carbon nanotube as the dual gate on a narrow channel etched from a modulation-doped GaAs /AlGaAs heterostructure. When the Y-junction nanotube is negatively biased, electrons traveling from source to drain along the channel face a voltage-tunable electrostatic double-barrier potential. We measured the three-terminal IDS(VDS,VGS) characteristics of the device at 4.2 K and observed gate-induced structure in the transconductance and negative differential resistance in the drain current. We interpret the data in terms of resonant tunneling through one-dimensional subbands confined by a self-consistently calculated electrostatic potential.

  10. 5 V driving organic non-volatile memory transistors with poly(vinyl alcohol) gate insulator and poly(3-hexylthiophene) channel layers

    NASA Astrophysics Data System (ADS)

    Nam, Sungho; Seo, Jooyeok; Kim, Hwajeong; Kim, Youngkyoo

    2015-10-01

    Organic non-volatile memory devices were fabricated by employing organic field-effect transistors (OFETs) with poly(vinyl alcohol) (PVA) and poly(3-hexylthiophene) as a gate insulating layer and a channel layer, respectively. The 10-nm-thick nickel layers were inserted for better charge injection between the channel layer and the top source/drain electrodes. The fabricated PVA-OFET memory devices could be operated at low voltages (≤5 V) and showed pronounced hysteresis characteristics in the transfer curves, even though very small hysteresis was measured from the output curves. The degree of hysteresis was considerably dependent on the ratio of channel width (W) to channel length (L). The PVA-OFET memory device with the smaller W/L ratio (25) exhibited better retention characteristics upon 700 cycles of writing-reading-erasing-reading operations, which was assigned to the stability of charged states in devices.

  11. Trapped-ion quantum logic gates based on oscillating magnetic fields.

    PubMed

    Ospelkaus, C; Langer, C E; Amini, J M; Brown, K R; Leibfried, D; Wineland, D J

    2008-08-29

    Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ion crystal and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering, a fundamental source of decoherence in laser-mediated gates.

  12. Inversion gate capacitance of undoped single-gate and double-gate field-effect transistor geometries in the extreme quantum limit

    SciTech Connect

    Majumdar, Amlan

    2015-05-28

    We present first-principle analytical derivations and numerically modeled data to show that the gate capacitance per unit gate area C{sub G} of extremely thin undoped-channel single-gate and double-gate field-effect transistor geometries in the extreme quantum limit with single-subband occupancy can be written as 1/C{sub G} = 1/C{sub OX} + N{sub G}/C{sub DOS} + N{sub G}/ηC{sub WF}, where N{sub G} is the number of gates, C{sub OX} is the oxide capacitance per unit area, C{sub DOS} is the density-of-states capacitance per unit area, C{sub WF} is the wave function spreading capacitance per unit area, and η is a constant on the order of 1.

  13. Self-Healing Polymer Dielectric for a High Capacitance Gate Insulator.

    PubMed

    Ko, Jieun; Kim, Young-Jae; Kim, Youn Sang

    2016-09-14

    Self-healing materials are required for development of various flexible electronic devices to repair cracks and ruptures caused by repetitive bending or folding. Specifically, a self-healing dielectric layer has huge potential to achieve healing electronics without mechanical breakdown in flexible operations. Here, we developed a high performance self-healing dielectric layer with an ionic liquid and catechol-functionalized polymer which exhibited a self-healing ability for both bulk and film states under mild self-healing conditions at 55 °C for 30 min. Due to the sufficient ion mobility of the ionic liquid in the polymer matrix, it had a high capacitance value above 1 μF/cm(2) at 20 Hz. Moreover, zinc oxide (ZnO) thin-film transistors (TFTs) with a self-healing dielectric layer exhibited a high field-effect mobility of 16.1 ± 3.07 cm(2) V(-1) s(-1) at a gate bias of 3 V. Even after repetitive self-healing of the dielectric layer from mechanical breaking, the electrical performance of the TFTs was well-maintained. PMID:27559823

  14. Self-Healing Polymer Dielectric for a High Capacitance Gate Insulator.

    PubMed

    Ko, Jieun; Kim, Young-Jae; Kim, Youn Sang

    2016-09-14

    Self-healing materials are required for development of various flexible electronic devices to repair cracks and ruptures caused by repetitive bending or folding. Specifically, a self-healing dielectric layer has huge potential to achieve healing electronics without mechanical breakdown in flexible operations. Here, we developed a high performance self-healing dielectric layer with an ionic liquid and catechol-functionalized polymer which exhibited a self-healing ability for both bulk and film states under mild self-healing conditions at 55 °C for 30 min. Due to the sufficient ion mobility of the ionic liquid in the polymer matrix, it had a high capacitance value above 1 μF/cm(2) at 20 Hz. Moreover, zinc oxide (ZnO) thin-film transistors (TFTs) with a self-healing dielectric layer exhibited a high field-effect mobility of 16.1 ± 3.07 cm(2) V(-1) s(-1) at a gate bias of 3 V. Even after repetitive self-healing of the dielectric layer from mechanical breaking, the electrical performance of the TFTs was well-maintained.

  15. Carbon Nanotube Gated Lateral Resonant Tunneling Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Wang, D. P.

    2005-03-01

    Carbon nanotubes have generated a great deal of interest for use in novel devices due to their small size and high current densities. We have produced a new type of lateral resonant tunneling field-effect transistor using a Y-junction multiwalled carbon nanotube as the dual gate on a narrow wire etched from a modulation-doped GaAs/AlGaAs heterostructure. The two branches of the Y-junction nanotube produced in an alumina nanotemplate array ootnotetextLi, J., Papadopoulos, C. and Xu, J. M., ``Growing Y- Junction Carbon Nanotubes" Nature 402, 253-254, 2000. are used as gates to produce a voltage-tunable double-barrier potential for the carriers traveling from source to drain along the wire. The three terminal I-V characteristics of the device have been measured at 4.2K. Conductance oscillation is observed as a function of dual gate potential, indicating electron resonant tunneling through the energy states between the barriers. Detailed measurement and comparison with self-consistent potential simulations will be presented.

  16. Poly(4-vinylphenol) gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors

    NASA Astrophysics Data System (ADS)

    Fan, Ching-Lin; Shang, Ming-Chi; Hsia, Mao-Yuan; Wang, Shea-Jue; Huang, Bohr-Ran; Lee, Win-Der

    2016-03-01

    A Microwave-Induction Heating (MIH) scheme is proposed for the poly(4-vinylphenol) (PVP) gate insulator cross-linking process to replace the traditional oven heating cross-linking process. The cross-linking time is significantly decreased from 1 h to 5 min by heating the metal below the PVP layer using microwave irradiation. The necessary microwave power was substantially reduced to about 50 W by decreasing the chamber pressure. The MIH scheme is a good candidate to replace traditional thermal heating for cross-linking of PVP as the gate insulator for organic thin-film-transistors.

  17. Improvement in performance of solution-processed indium-zinc-tin oxide thin-film transistors by UV/O3 treatment on zirconium oxide gate insulator

    NASA Astrophysics Data System (ADS)

    Naik, Bukke Ravindra; Avis, Christophe; Delwar Hossain Chowdhury, Md; Kim, Taehun; Lin, Tengda; Jang, Jin

    2016-03-01

    We studied solution-processed amorphous indium-zinc-tin oxide (a-IZTO) thin-film transistors (TFTs) with spin-coated zirconium oxide (ZrOx) as the gate insulator. The ZrOx gate insulator was used without and with UV/O3 treatment. The TFTs with an untreated ZrOx gate dielectric showed a saturation mobility (μsat) of 0.91 ± 0.29 cm2 V-1 s-1, a threshold voltage (Vth) of 0.28 ± 0.36 V, a subthreshold swing (SS) of 199 ± 37.17 mV/dec, and a current ratio (ION/IOFF) of ˜107. The TFTs with a UV/O3-treated ZrOx gate insulator exhibited μsat of 2.65 ± 0.43 cm2 V-1 s-1, Vth of 0.44 ± 0.35 V, SS of 133 ± 24.81 mV/dec, and ION/IOFF of ˜108. Hysteresis was 0.32 V in the untreated TFTs and was eliminated by UV/O3 treatment. Also, the leakage current decreased significantly when the IZTO TFT was coated onto a UV/O3-treated ZrOx gate insulator.

  18. Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors

    SciTech Connect

    Young, Chadwin D. Wang, Zhe; Neugroschel, Arnost; Majumdar, Kausik; Matthews, Ken; Hobbs, Chris

    2015-01-21

    The fin width dependence of negative bias temperature instability (NBTI) of double-gate, fin-based p-type Field Effect Transistors (FinFETs) fabricated on silicon-on-insulator (SOI) wafers was investigated. The NBTI degradation increased as the fin width narrowed. To investigate this phenomenon, simulations of pre-stress conditions were employed to determine any differences in gate oxide field, fin band bending, and electric field profile as a function of the fin width. The simulation results were similar at a given gate stress bias, regardless of the fin width, although the threshold voltage was found to increase with decreasing fin width. Thus, the NBTI fin width dependence could not be explained from the pre-stress conditions. Different physics-based degradation models were evaluated using specific fin-based device structures with different biasing schemes to ascertain an appropriate model that best explains the measured NBTI dependence. A plausible cause is an accumulation of electrons that tunnel from the gate during stress into the floating SOI fin body. As the fin narrows, the sidewall device channel moves in closer proximity to the stored electrons, thereby inducing more band bending at the fin/dielectric interface, resulting in a higher electric field and hole concentration in this region during stress, which leads to more degradation. The data obtained in this work provide direct experimental proof of the effect of electron accumulation on the threshold voltage stability in FinFETs.

  19. Insulation.

    ERIC Educational Resources Information Center

    Rhea, Dennis

    This instructional unit is one of 10 developed by students on various energy-related areas that deals specifically with insulation. Its objective is for the student to be able to determine insulation needs of new or existing structures, select type to use, use installation techniques, calculate costs, and apply safety factors. Some topics covered…

  20. Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride-trifluoroethylene), as a gate dielectric

    NASA Astrophysics Data System (ADS)

    Miyata, Yusuke; Yoshimura, Takeshi; Ashida, Atsushi; Fujimura, Norifumi

    2016-04-01

    Si-based metal-ferroelectric-semiconductor (MFS) capacitors have been fabricated using poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as a ferroelectric gate. The pinhole-free P(VDF-TrFE) thin films with high resistivity were able to be prepared by spin-coating directly onto hydrogen-terminated Si. The capacitance-voltage (C-V) characteristics of the ferroelectric gate field effect transistor (FeFET) using this MFS structure clearly show butterfly-shaped hysteresis originating from the ferroelectricity, indicating carrier modulation on the Si surface at gate voltages below 2 V. The drain current-gate voltage (I D-V G) characteristics also show counterclockwise hysteresis at gate voltages below 5 V. This is the first report on the low-voltage operation of a Si-based FeFET using P(VDF-TrFE) as a gate dielectric. This organic gate FeFET without any insulator layer at the ferroelectric/Si interface should be one of the promising devices for overcoming the critical issues of the FeFET, such as depolarization field and a decrease in the gate voltage.

  1. A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

    DOE PAGES

    Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; Wang, Fei Fred; Liang, Zhenxian; Costinett, Daniel; Blalock, Benjamin J.

    2014-04-30

    Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

  2. A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

    SciTech Connect

    Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; Wang, Fei Fred; Liang, Zhenxian; Costinett, Daniel; Blalock, Benjamin J.

    2014-04-30

    Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate driver and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.

  3. Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

    NASA Astrophysics Data System (ADS)

    Zhang, Jia-Qi; Wang, Lei; Li, Liu-An; Wang, Qing-Peng; Jiang, Ying; Zhu, Hui-Chao; Ao, Jin-Ping

    2016-08-01

    Self-aligned-gate heterostructure field-effect transistor (HFET) is fabricated using a wet-etching method. Titanium nitride (TiN) is one kind of thermal stable material which can be used as the gate electrode. A Ti/Au cap layer is fixed on the gate and acts as an etching mask. Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H2O2 solution at 95 °C. After treating the ohmic region with an inductively coupled plasma (ICP) method, an Al layer is sputtered as an ohmic electrode. The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575 °C in N2 ambient for 1 min. The TiN gate leakage current is only 10‑8 A after the low-temperature ohmic process. The access region length of the self-aligned-gate (SAG) HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET. The output current density and transconductance of the device which has the same gate length and width are also increased.

  4. Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

    NASA Astrophysics Data System (ADS)

    Zhang, Jia-Qi; Wang, Lei; Li, Liu-An; Wang, Qing-Peng; Jiang, Ying; Zhu, Hui-Chao; Ao, Jin-Ping

    2016-08-01

    Self-aligned-gate heterostructure field-effect transistor (HFET) is fabricated using a wet-etching method. Titanium nitride (TiN) is one kind of thermal stable material which can be used as the gate electrode. A Ti/Au cap layer is fixed on the gate and acts as an etching mask. Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H2O2 solution at 95 °C. After treating the ohmic region with an inductively coupled plasma (ICP) method, an Al layer is sputtered as an ohmic electrode. The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575 °C in N2 ambient for 1 min. The TiN gate leakage current is only 10-8 A after the low-temperature ohmic process. The access region length of the self-aligned-gate (SAG) HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET. The output current density and transconductance of the device which has the same gate length and width are also increased.

  5. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors

    NASA Astrophysics Data System (ADS)

    Le, Son Phuong; Ui, Toshimasa; Nguyen, Tuan Quy; Shih, Hong-An; Suzuki, Toshi-kazu

    2016-05-01

    Using aluminum titanium oxide (AlTiO, an alloy of Al2O3 and TiO2) as a high-k gate insulator, we fabricated and investigated AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. From current low-frequency noise (LFN) characterization, we find Lorentzian spectra near the threshold voltage, in addition to 1/f spectra for the well-above-threshold regime. The Lorentzian spectra are attributed to electron trapping/detrapping with two specific time constants, ˜25 ms and ˜3 ms, which are independent of the gate length and the gate voltage, corresponding to two trap level depths of 0.5-0.7 eV with a 0.06 eV difference in the AlTiO insulator. In addition, gate leakage currents are analyzed and attributed to the Poole-Frenkel mechanism due to traps in the AlTiO insulator, where the extracted trap level depth is consistent with the Lorentzian LFN.

  6. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  7. Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

    NASA Astrophysics Data System (ADS)

    Mohsen, Mahmoudi; Zahra, Ahangari; Morteza, Fathipour

    2016-01-01

    The electrical characteristics of a double-gate armchair silicene nanoribbon field-effect-transistor (DG ASiNR FET) are thoroughly investigated by using a ballistic quantum transport model based on non-equilibrium Green’s function (NEGF) approach self-consistently coupled with a three-dimensional (3D) Poisson equation. We evaluate the influence of variation in uniaxial tensile strain, ribbon temperature and oxide thickness on the on-off current ratio, subthreshold swing, transconductance and the delay time of a 12-nm-length ultranarrow ASiNR FET. A novel two-parameter strain magnitude and temperature-dependent model is presented for designing an optimized device possessing balanced amelioration of all the electrical parameters. We demonstrate that employing HfO2 as the gate insulator can be a favorable choice and simultaneous use of it with proper combination of temperature and strain magnitude can achieve better device performance. Furthermore, a general model power (GMP) is derived which explicitly provides the electron effective mass as a function of the bandgap of a hydrogen passivated ASiNR under strain.

  8. A novel quantum field approach to photoexcited insulators

    NASA Astrophysics Data System (ADS)

    Klotins, E.

    2016-07-01

    In order to predict optical properties of insulating materials under intensive laser excitation, we generalized methods of quantum electrodynamics, allowing us to simulate excitation of electrons and holes, interacting with each other and acoustic phonons. The prototypical model considers a two-band dielectric material characterized by the dispersion relations for electron and hole states. We developed a universal description of excited electrons, holes and acoustic phonons within joint quantum kinetics formalism. Illustrative solutions for the quasiparticle birth-annihilation operators, applicable at short laser pulses at 0 K, are obtained by the transition from the macroscopic description to the quantum field formalism.

  9. Thermoelectric efficiency of topological insulators in a magnetic field

    NASA Astrophysics Data System (ADS)

    Tretiakov, O. A.; Abanov, Ar.; Sinova, Jairo

    2012-04-01

    We study the thermoelectric properties of three-dimensional topological insulators in magnetic fields with many holes (or pores) in the bulk. We find that at a high density of these holes in the transport direction the thermoelectric figure of merit, ZT, can be large due to the contribution of the topologically protected conducting surfaces and the suppressed phonon thermal conductivity. By applying an external magnetic field, a subgap can be induced in the surface states' spectrum. We show that the thermoelectric efficiency can be controlled by this tunable subgap leading to values of ZT much greater than 1. Such high values of ZT for reasonable system parameters and its tunability by a magnetic field make this system a strong candidate for applications in the heat management of nanodevices, especially at low temperatures.

  10. Leakage and field emission in side-gate graphene field effect transistors

    NASA Astrophysics Data System (ADS)

    Di Bartolomeo, A.; Giubileo, F.; Iemmo, L.; Romeo, F.; Russo, S.; Unal, S.; Passacantando, M.; Grossi, V.; Cucolo, A. M.

    2016-07-01

    We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.

  11. Electric field-induced transport modulation in VO2 FETs with high-k oxide/organic parylene-C hybrid gate dielectric

    NASA Astrophysics Data System (ADS)

    Wei, Tingting; Kanki, Teruo; Fujiwara, Kohei; Chikanari, Masashi; Tanaka, Hidekazu

    2016-02-01

    We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation.

  12. Resistance modulation in VO2 nanowires induced by an electric field via air-gap gates

    NASA Astrophysics Data System (ADS)

    Kanki, Teruo; Chikanari, Masashi; Wei, Tingting; Tanaka, Hidekazu; The Institute of Scientific; Industrial Research Team

    Vanadium dioxide (VO2) shows huge resistance change with metal-insulator transition (MIT) at around room temperature. Controlling of the MIT by applying an electric field is a topical ongoing research toward the realization of Mott transistor. In this study, we have successfully switched channel resistance of VO2 nano-wire channels by a pure electrostatic field effect using a side-gate-type field-effect transistor (SG-FET) viaair gap and found that single crystalline VO2 nanowires and the channels with narrower width enhance transport modulation rate. The rate of change in resistance ((R0-R)/R, where R0 and R is the resistance of VO2 channel with off state and on state gate voltage (VG) , respectively) was 0.42 % at VG = 30 V in in-plane poly-crystalline VO2 channels on Al2O3(0001) substrates, while the rate in single crystalline channels on TiO2 (001) substrates was 3.84 %, which was 9 times higher than that using the poly-crystalline channels. With reducing wire width from 3000 nm to 400 nm of VO2 on TiO2 (001) substrate, furthermore, resistance modulation ratio enhanced from 0.67 % to 3.84 %. This change can not be explained by a simple free-electron model. In this presentation, we will compare the electronic properties between in-plane polycrystalline VO2 on Al2O3 (0001) and single crystalline VO2 on TiO2 (001) substrates, and show experimental data in detail..

  13. Gate direct-tunnelling and hot-carrier-induced hysteresis effect in partially depleted silicon-on-insulator floating-body MOSFETs

    NASA Astrophysics Data System (ADS)

    Zhou, Jianhua; Pang, Albert; Zou, Shichang

    2011-02-01

    The hysteresis effect in the output characteristics of partially depleted (PD) silicon-on-insulator (SOI) floating-body MOSFETs with an ultra-thin gate oxide is studied taking account of both gate direct-tunnelling and impact ionization-induced hot-carrier mechanisms. It is proposed that hole tunnelling from valence band (HVB) for floating-body PD SOI n-MOSFETs, electron tunnelling from conduction band (ECB) for floating-body PD SOI p-MOSFETs and impact-ionization-induced hot carriers are the main causes of the hysteresis effect. Meanwhile, body-contact structures of T-gate and H-gate PD SOI MOSFETs are also studied under floating-body configurations. It is found that the influence of the converse poly-gate on the body-contact side on gate direct-tunnelling cannot be neglected in view of floating-body potential variation. Based on the measurement results, the hysteresis can be suppressed using T-gate and H-gate PD SOI MOSFETs with floating-body configurations.

  14. Encapsulated gate-all-around InAs nanowire field-effect transistors

    NASA Astrophysics Data System (ADS)

    Sasaki, Satoshi; Tateno, Kouta; Zhang, Guoqiang; Suominen, Henri; Harada, Yuichi; Saito, Shiro; Fujiwara, Akira; Sogawa, Tetsuomi; Muraki, Koji

    2013-11-01

    We report the fabrication of lateral gate-all-around InAs nanowire field-effect transistors whose gate overlaps the source and drain electrodes and thus fully encapsulates the nanowire channel. They feature large drive current and transconductance that surpass those of conventional non-gate-overlap devices. The improved device characteristics can be attributed to the elimination of access resistance associated with ungated segments between the gate and source/drain electrodes. Our data also reveal a correlation between the normalized transconductance and the threshold voltage, which points to a beneficial effect of our wet-etching procedure performed prior to the atomic-layer-deposition of the gate dielectric.

  15. Encapsulated gate-all-around InAs nanowire field-effect transistors

    SciTech Connect

    Sasaki, Satoshi Tateno, Kouta; Zhang, Guoqiang; Suominen, Henri; Harada, Yuichi; Saito, Shiro; Fujiwara, Akira; Sogawa, Tetsuomi; Muraki, Koji

    2013-11-18

    We report the fabrication of lateral gate-all-around InAs nanowire field-effect transistors whose gate overlaps the source and drain electrodes and thus fully encapsulates the nanowire channel. They feature large drive current and transconductance that surpass those of conventional non-gate-overlap devices. The improved device characteristics can be attributed to the elimination of access resistance associated with ungated segments between the gate and source/drain electrodes. Our data also reveal a correlation between the normalized transconductance and the threshold voltage, which points to a beneficial effect of our wet-etching procedure performed prior to the atomic-layer-deposition of the gate dielectric.

  16. Experimental Observation of a Metal-insulator Transition in 2D at Zero Magnetic Field

    NASA Astrophysics Data System (ADS)

    Kravchenko, S. V.

    1996-03-01

    The scaling theory of Abrahams et al. ^1 has had considerable success in describing many features of metal-insulator transitions. Within this theory, which was developed for non-interacting electrons, no such transition is possible in two-dimensional electron systems (2DES) in the absence of a magnetic field. However, we show experimentally that an ultra-high-mobility 2DES on the surface of silicon does exhibit the signature of a true metal-insulator phase transition at zero magnetic field at a critical electron density n_c ~10^11 cm-2. The energy of electron-electron interactions, ignored in the scaling theory,^1 is the dominant parameter in this 2DES. The resistivity, ρ, is empirically found to scale near the critical point both with temperature T and electric field E so that it can be represented by the form ρ(T,n_s)=ρ(T/T_0(n_s)) as Earrow0 or ρ(E,n_s)=ρ(E/E_0(n_s)) as Tarrow0. At the transition, the resistivity is close to 3h/e^2. Both scaling parameters, T0 and E_0, show power law behavior at the critical point. This is characteristic of a true phase transition and strongly resembles, in particular, the superconductor-insulator transition in disordered thin films,^2 as well as the transition between quantum Hall liquid and insulator.^3 Many high-mobility samples from two different sources (Institute for Metrological Service, Russia, and Siemens AG, Germany) with different oxide thicknesses and gate materials have been studied and similar results were found. Work done in collaboration with J. E. Furneaux, Whitney Mason, V. M. Pudalov, and M. D'Iorio, supported by NSF. ^1 E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979). ^2 Y. Liu, K. A. McGreer, B. Nease, D. B. Haviland, G. Martinez, J. W. Halley, and A. M. Goldman, Phys. Rev. Lett. 67, 2068 (1991). ^3 T. Wang, K. P. Clark, G. F. Spencer, A. M. Mack, and W. P. Kirk, Phys. Rev. Lett. 72, 709 (1994).

  17. Evolutionary Based Techniques for Fault Tolerant Field Programmable Gate Arrays

    NASA Technical Reports Server (NTRS)

    Larchev, Gregory V.; Lohn, Jason D.

    2006-01-01

    The use of SRAM-based Field Programmable Gate Arrays (FPGAs) is becoming more and more prevalent in space applications. Commercial-grade FPGAs are potentially susceptible to permanently debilitating Single-Event Latchups (SELs). Repair methods based on Evolutionary Algorithms may be applied to FPGA circuits to enable successful fault recovery. This paper presents the experimental results of applying such methods to repair four commonly used circuits (quadrature decoder, 3-by-3-bit multiplier, 3-by-3-bit adder, 440-7 decoder) into which a number of simulated faults have been introduced. The results suggest that evolutionary repair techniques can improve the process of fault recovery when used instead of or as a supplement to Triple Modular Redundancy (TMR), which is currently the predominant method for mitigating FPGA faults.

  18. Field emission of carbon nanotube array with normal-gate cold cathode

    NASA Astrophysics Data System (ADS)

    Dai, Jian-Feng; Mu, Xiao-Wen; Qiao, Xian-Wu; Chen, Xiao-Xing; Wang, Jun-Hong

    2010-05-01

    A hexagon pitch carbon nanotube (CNT) array vertical to the normal gate of cold cathode field emission displayer (FED) is simulated by solving the Laplace equation. The calculated results show that the normal gate causes the electric field around the CNT tops to be concentrated and the emission electron beam becomes a column. The field enhancement factor and the emission current intensity step up greatly compared with those of the diode structure. Emission current density increases rapidly with the decrease of normal-gate aperture. The gate voltage exerts a critical influence on the emission current.

  19. Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

    NASA Astrophysics Data System (ADS)

    Ye, G.; Wang, H.; Arulkumaran, S.; Ng, G. I.; Hofstetter, R.; Li, Y.; Anand, M. J.; Ang, K. S.; Maung, Y. K. T.; Foo, S. C.

    2013-09-01

    In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is reported. The ZrO2 AlGaN/GaN MISHEMTs showed improved maximum drain current density (Idmax) with high peak transconductance (gmmax) as comparison to Schottky-barrier-gate HEMTs (SB-HEMTs). Also compared to SB-HEMTs, reverse gate leakage current was four orders of magnitude lower and forward gate bias extended to +7.4 V. At energy from -0.29 eV to -0.36 eV, low interface trap state density evaluated by AC conductance and "Hi-Lo frequency" methods indicates good quality of atomic-layer-deposited ZrO2 dielectric layer.

  20. Investigation of field induced trapping on floating gates

    NASA Technical Reports Server (NTRS)

    Gosney, W. M.

    1975-01-01

    The development of a technology for building electrically alterable read only memories (EAROMs) or reprogrammable read only memories (RPROMs) using a single level metal gate p channel MOS process with all conventional processing steps is outlined. Nonvolatile storage of data is achieved by the use of charged floating gate electrodes. The floating gates are charged by avalanche injection of hot electrodes through gate oxide, and discharged by avalanche injection of hot holes through gate oxide. Three extra diffusion and patterning steps are all that is required to convert a standard p channel MOS process into a nonvolatile memory process. For identification, this nonvolatile memory technology was given the descriptive acronym DIFMOS which stands for Dual Injector, Floating gate MOS.

  1. Field evaluation of 69-kV outdoor Polysil reg sign insulators

    SciTech Connect

    Richenbacher, A.G. )

    1990-03-01

    This report, together with previous interim reports, documents and summarizes the field performance of 69 kV Polysil{reg sign} insulators during the field trial period from January, 1983 to December, 1988. These insulators were manufactured for the Electric Power Research Institute by Lindsey Industries in 1979. A description of the insulator development and manufacturing process is contained in the EPRI Final Report EL1281-1. Following their manufacture, the insulators were delivered, in the form of test racks of 17 Polysil{reg sign} insulators and one porcelain insulator, to twelve United States utilities and the Instituto de Investigaciones Electricas (IIE) in Mexico. These racks were subsequently installed and energized at twenty-five test sites during the latter half of 1979 and early 1980 by the project participants for the purpose of analyzing the outdoor field performance of these insulators and comparing the relative effect on performance of variations in composition, coating, electrical grading method, and shape represented by individual insulators within the test racks. This report documents the effects of the various Polysil{reg sign} insulator parameters on electrical performance in the field over a specific period of 6 years. However, the insulators had been energized for approximately 3 years prior to the initiation of this project and, although specific performance data is not available for that time period, the overall effects of field exposure for that additional time period (total of 9 years) are seen in the results of this report. 3 refs., 23 figs., 9 tabs.

  2. Infrared light gated MoS₂ field effect transistor.

    PubMed

    Fang, Huajing; Lin, Ziyuan; Wang, Xinsheng; Tang, Chun-Yin; Chen, Yan; Zhang, Fan; Chai, Yang; Li, Qiang; Yan, Qingfeng; Chan, H L W; Dai, Ji-Yan

    2015-12-14

    Molybdenum disulfide (MoS₂) as a promising 2D material has attracted extensive attentions due to its unique physical, optical and electrical properties. In this work, we demonstrate an infrared (IR) light gated MoS₂ transistor through a device composed of MoS₂ monolayer and a ferroelectric single crystal Pb(Mg(1/3)Nb(2/3))O₃-PbTiO₃ (PMN-PT). With a monolayer MoS₂ onto the top surface of (111) PMN-PT crystal, the drain current of MoS₂ channel can be modulated with infrared illumination and this modulation process is reversible. Thus, the transistor can work as a new kind of IR photodetector with a high IR responsivity of 114%/Wcm⁻². The IR response of MoS₂ transistor is attributed to the polarization change of PMN-PT single crystal induced by the pyroelectric effect which results in a field effect. Our result promises the application of MoS₂ 2D material in infrared optoelectronic devices. Combining with the intrinsic photocurrent feature of MoS₂ in the visible range, the MoS₂ on ferroelectric single crystal may be sensitive to a broadband wavelength of light.

  3. Start Up Application Concerns with Field Programmable Gate Arrays (FPGAs)

    NASA Technical Reports Server (NTRS)

    Katz, Richard B.

    1999-01-01

    This note is being published to improve the visibility of this subject, as we continue to see problems surface in designs, as well as to add additional information to the previously published note for design engineers. The original application note focused on designing systems with no single point failures using Actel Field Programmable Gate Arrays (FPGAs) for critical applications. Included in that note were the basic principles of operation of the Actel FPGA and a discussion of potential single-point failures. The note also discussed the issue of startup transients for that class of device. It is unfortunate that we continue to see some design problems using these devices. This note will focus on the startup properties of certain electronic components, in general, and current Actel FPGAs, in particular. Devices that are "power-on friendly" are currently being developed by Actel, as a variant of the new SX series of FPGAs. In the ideal world, electronic components would behave much differently than they do in the real world, The chain, of course, starts with the power supply. Ideally, the voltage will immediately rise to a stable V(sub cc) level, of course, it does not. Aside from practical design considerations, inrush current limits of certain capacitors must be observed and the power supply's output may be intentionally slew rate limited to prevent a large current spike on the system power bus. In any event, power supply rise time may range from less than I msec to 100 msec or more.

  4. Infrared light gated MoS₂ field effect transistor.

    PubMed

    Fang, Huajing; Lin, Ziyuan; Wang, Xinsheng; Tang, Chun-Yin; Chen, Yan; Zhang, Fan; Chai, Yang; Li, Qiang; Yan, Qingfeng; Chan, H L W; Dai, Ji-Yan

    2015-12-14

    Molybdenum disulfide (MoS₂) as a promising 2D material has attracted extensive attentions due to its unique physical, optical and electrical properties. In this work, we demonstrate an infrared (IR) light gated MoS₂ transistor through a device composed of MoS₂ monolayer and a ferroelectric single crystal Pb(Mg(1/3)Nb(2/3))O₃-PbTiO₃ (PMN-PT). With a monolayer MoS₂ onto the top surface of (111) PMN-PT crystal, the drain current of MoS₂ channel can be modulated with infrared illumination and this modulation process is reversible. Thus, the transistor can work as a new kind of IR photodetector with a high IR responsivity of 114%/Wcm⁻². The IR response of MoS₂ transistor is attributed to the polarization change of PMN-PT single crystal induced by the pyroelectric effect which results in a field effect. Our result promises the application of MoS₂ 2D material in infrared optoelectronic devices. Combining with the intrinsic photocurrent feature of MoS₂ in the visible range, the MoS₂ on ferroelectric single crystal may be sensitive to a broadband wavelength of light. PMID:26698982

  5. Explicit Compact Surface-Potential and Drain-Current Models for Generic Asymmetric Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaomin; Zhou, Xing; Chandrasekaran, Karthik; Rustagi, Subhash C.; See, Guan Huei

    2007-04-01

    In this paper, explicit surface potentials for undoped asymmetric-double-gate (a-DG) metal-oxide-semiconductor field-effect transistors (MOSFETs) suitable for compact model development are presented for the first time. The model is physically derived from Poisson’s equation in each region of operation and adopted in a unified regional approach. The proposed model is physically scalable with oxide/channel thicknesses and has been verified with generic implicit solutions for independent gate biases as well as for different gate/oxide materials. The model is extendable to silicon-on-insulator (SOI) and symmetric-DG (s-DG) MOSFETs. Finally, a continuous, explicit drain-current equation has been derived on the basis of the developed explicit surface-potential solutions.

  6. Threshold voltage model of junctionless cylindrical surrounding gate MOSFETs including fringing field effects

    NASA Astrophysics Data System (ADS)

    Gupta, Santosh Kumar

    2015-12-01

    2D Analytical model of the body center potential (BCP) in short channel junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs is developed using evanescent mode analysis (EMA). This model also incorporates the gate bias dependent inner and outer fringing capacitances due to the gate-source/drain fringing fields. The developed model provides results in good agreement with simulated results for variations of different physical parameters of JLCSG MOSFET viz. gate length, channel radius, doping concentration, and oxide thickness. Using the BCP, an analytical model for the threshold voltage has been derived and validated against results obtained from 3D device simulator.

  7. Quasistationary states of insulators in finite electric fields

    NASA Astrophysics Data System (ADS)

    Souza, Ivo; Íñiguez, Jorge; Vanderbilt, David

    2004-03-01

    A total-energy method for insulators in nonzero electric fields has been proposed recently.(I. Souza, J. Íñiguez, and D. Vanderbilt, Phys. Rev. Lett. 89), 117602 (2002). In its original form it is limited to static fields below a critical value l Ec that depends inversely on the number of k points in the Brillouin zone; above l Ec the energy functional loses its minima, and thus stationarity is destroyed by Zener charge leakage. Using a time-dependent formalism(Ibid), cond-mat/0309259. we show for a tight-binding model that above l Ec the stationary solutions become long-lived resonances which can be accessed dynamically by gradually increasing l E. We propose computing such states by minimizing an ``energy residual'' functional that measures the degree of nonstationarity as a quantum distance between the occupied manifolds at times t and t+dt, thus avoiding the need for an explicit solution of the time-dependent Schrödinger equation.

  8. Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates

    NASA Astrophysics Data System (ADS)

    Yan, L.; Olsen, S. H.; Escobedo-Cousin, E.; O'Neill, A. G.

    2008-05-01

    This work presents a detailed study of ultrathin gate oxide integrity in strained Si metal oxide silicon field effect transistors (MOSFETs) fabricated on thin virtual substrates aimed at reducing device self-heating. The gate oxide quality and reliability of the devices are compared to those of simultaneously processed Si control devices and conventional thick virtual substrate devices that have the same Ge content (20%), strained Si channel thickness, and channel strain. The thin virtual substrates offer the same mobility enhancement as the thick virtual substrates (˜100% compared to universal mobility data) and are effective at reducing device self-heating. Up to 90% improvement in gate leakage current is demonstrated for the strained Si n-channel MOSFETs compared to that for the bulk Si controls. The lower leakage arises from the increased electron affinity in tensile strained Si and is significant due to the sizeable strain generated by using wafer-level stressors. The strain-induced leakage reductions also lead to major improvements in stress-induced leakage current (SILC) and oxide reliability. The lower leakage current of the thin and thick virtual substrate devices compares well to theoretical estimates based on the Wentzel-Kramers-Brillouin approximation. Breakdown characteristics also differ considerably between the devices, with the strained Si devices exhibiting a one order of magnitude increase in time to hard breakdown (THBD) compared to the Si control devices following high-field stressing at 17 MV cm-1. The strained Si devices are exempted from soft breakdown. Experimental based analytical leakage modeling has been carried out across the field range for the first time in thin oxides and demonstrates that Poole-Frenkel (PF) emissions followed by Fowler-Nordheim tunneling dominate gate leakage current at low fields in all of the devices. This contrasts to the frequently reported assumption that direct tunneling dominates gate leakage in ultrathin

  9. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOEpatents

    Morse, Jeffrey D.; Contolini, Robert J.

    2001-01-01

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  10. Gate dependent photo-responses of carbon nanotube field effect phototransistors.

    PubMed

    Chen, H Z; Xi, N; Lai, K W C; Chen, L L; Yang, R G; Song, B

    2012-09-28

    Gate dependent photoconductivity of carbon nanotube (CNT) field effect phototransistors (FEPs) was systematically investigated in this study. The photo-response comparisons of CNT FEPs with symmetric and asymmetric metal structures connecting to the same CNT revealed that the gate effect contributed to a sensitivity improvement with a lower dark current, a higher photocurrent, and an enhanced photovoltage. A functionalized asymmetric FEP, fabricated by partially doping the CNT utilizing a polyethylene imine (PEI) polymer, verified that FEPs delivered a better performance by using asymmetric structures. A multi-gate FEP, with three pairs of side-gates that can electrostatically dope different sections of a CNT independently, was fabricated to examine the gate structure dependent photo-responses. Experimental measurements showed an unconventional photocurrent improvement that was weakly dependent on the gate location, which was attributed to the unique charge distribution of one-dimensional semiconductors. PMID:22948041

  11. Low-temperature processable inherently photosensitive polyimide as a gate insulator for organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Pyo, Seungmoon; Son, Hyunsam; Choi, Kil-Yeong; Yi, Mi Hye; Hong, Sung Kwon

    2005-03-01

    We have fabricated organic thin-film transistors (OTFTs) on polyethersulfone substrate using low-temperature processable, inherently photosensitive polyimide as the gate insulator and pentacene as the active material. The polyimide was prepared through two-step reaction. The polyimide precursor, poly(amic acid), was prepared from a dianhydride and aromatic diamine through a polycondensation reaction, and subsequently converted to its corresponding polyimide by a chemical imidization. Photolithographic properties of the polyimide are investigated. The pattern resolution of the cured polyimide was about 50μm. The pentacene OTFTs with the patterned polyimide were obtained with a carrier mobility of 0.1cm2/Vs and ION/IOFF of 5×105. The OTFT characteristics are discussed in more detail with respect to the electrical properties of the photosensitive polyimide thin film. This low-temperature photopatternable polyimide paves the way for the easy and low-cost fabrication of OTFT arrays without expensive and complicated photolithography and dry etching processes.

  12. A Ferroelectric Gate Field Effect Transistor with a ZnO/Pb(Zr,Ti)O3 Heterostructure Formed on a Silicon Substrate

    NASA Astrophysics Data System (ADS)

    Tanaka, Hiroyuki; Kaneko, Yukihiro; Kato, Yoshihisa

    2008-09-01

    We have developed a ferroelectric gate field effect transistor (FeFET) with a stacked oxide structure of ZnO/Pb(Zr,Ti)O3 (PZT)/SrRuO3 (SRO) on a Pt/SiO2-coated silicon substrate. The PZT film which acted as a ferroelectric gate insulator was completely oriented in the (111) direction. The well oriented PZT film was realized by the insertion of the SRO layer, which electrically acted, together with the bottom Pt layer as a bottom gate electrode. In order to realize a sharp heterointerface of ZnO/PZT, we applied chemical-mechanical-polishing (CMP) to the PZT surface giving rise to a minimized surface roughness of less than 0.65 nm (rms). The ZnO film stacked on the smooth PZT surface exhibited a c-axis orientation. Subsequently, the source and drain electrodes of Pt/Ti were formed on the ZnO surface. With a drain-to-source voltage of 0.1 V, the conduction current through the ZnO/PZT heterointerface was characterized. A large on/off current ratio (Ion/Ioff) higher than 105 was obtained between the gate voltage conditions of +10 and -10 V owing to the polarization reversal of the PZT gate. Notably, the on/off ratio was stable for more than 105 s without the application of gate bias.

  13. Assessment of performance potential of MoS{sub 2}-based topological insulator field-effect transistors

    SciTech Connect

    Liu, Leitao; Guo, Jing

    2015-09-28

    It was suggested that single-layer MoS{sub 2} at the 1T′ phase is a topological insulator whose electronic structure can be modulated by a vertical electric field for field-effect transistor (FET) applications [X. Qian, J. Liu, L. Fu, and J. Li, Science 346, 1344 (2014)]. In this work, performance potential of FETs based on vertical field modulation of the topological edge states is assessed by using quantum transport device simulations. To perform efficient device simulations, a phenomenological Hamiltonian is first proposed and validated to capture the effects of electric fields. Because the ON-state conductance is determined by transport through gapless edge states with a long scattering mean free path and the OFF-state conductance by transport through the gapped bulk states, the ON/OFF ratio is sensitive to the channel length, which is different from conventional FETs. Although a high vertical electric field is required to modulate the topological edge state, a reasonably small subthreshold swing of 131 mV/dec can still be achieved for a practical value of the gate insulator thickness.

  14. Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Kim, S. K.; Chang, D.; Xuan, Y.; Mohammadi, S.; Ye, P. D.; Lu, G.; Facchetti, A.; Marks, T. J.

    2007-08-01

    Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are presented. The application of SAND on compound semiconductors offers unique opportunities for high-performance devices. Thus, 1μm gate-length depletion-mode n-channel SAND/GaAs MISFETs exhibit low gate leakage current densities of 10-2-10-5A/cm2, a maximum drain current of 260mA/mm at 2V forward gate bias, and a maximum intrinsic transconductance of 127mS/mm. These devices achieve a current cutoff frequency (fT) of 10.6GHz and a maximum oscillation frequency (fmax) of 6.9GHz. Nearly hysteresis-free Ids-Vgs characteristics and low flicker noise indicate that a high-quality SAND-GaAs interface is achieved.

  15. A New 600 V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection

    NASA Astrophysics Data System (ADS)

    Ji, In-Hwan; Jeon, Byung-Chul; Choi, Young-Hwan; Ha, Min-Woo; Han, Min-Koo

    2006-10-01

    A new fault sensing scheme of the insulated gate bipolar transistor (IGBT) employing the floating p-well, which detects the over-voltage of the floating p-well under the short circuit fault condition, is proposed and implemented by fabricating the main IGBT and gate voltage pull-down circuit using the widely used planar IGBT process. The floating p-well structure also improves the avalanche energy of IGBT in addition to detecting the fault signal. The detection of fault and gate voltage pull-down operation is achieved by the proposed fault protection scheme employing the floating p-well voltage detection. The proposed fault protection circuit was measured under the hard switching fault (HSF) and fault under load (FUL) conditions. The normal switching behavior of the main IGBT with the proposed protection circuit was also investigated under inductive load switching conditions.

  16. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.

    PubMed

    Rigante, Sara; Scarbolo, Paolo; Wipf, Mathias; Stoop, Ralph L; Bedner, Kristine; Buitrago, Elizabeth; Bazigos, Antonios; Bouvet, Didier; Calame, Michel; Schönenberger, Christian; Ionescu, Adrian M

    2015-05-26

    Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suitable device architectures for sensing integrated circuits. In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon by a fully CMOS compatible approach, as an alternative to the widely investigated silicon nanowires on silicon-on-insulator substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully depleted FinFETs with critical dimensions on the order of 20 nm and HfO2 as a high-k gate insulator have been developed and characterized, showing excellent electrical properties, subthreshold swing, SS ∼ 70 mV/dec, and on-to-off current ratio, Ion/Ioff ∼ 10(6), at room temperature. The same FinFET architecture is validated as a highly sensitive, stable, and reproducible pH sensor. An intrinsic sensitivity close to the Nernst limit, S = 57 mV/pH, is achieved. The pH response in terms of output current reaches Sout = 60%. Long-term measurements have been performed over 4.5 days with a resulting drift in time δVth/δt = 0.10 mV/h. Finally, we show the capability to reproduce experimental data with an extended three-dimensional commercial finite element analysis simulator, in both dry and wet environments, which is useful for future advanced sensor design and optimization.

  17. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.

    PubMed

    Rigante, Sara; Scarbolo, Paolo; Wipf, Mathias; Stoop, Ralph L; Bedner, Kristine; Buitrago, Elizabeth; Bazigos, Antonios; Bouvet, Didier; Calame, Michel; Schönenberger, Christian; Ionescu, Adrian M

    2015-05-26

    Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suitable device architectures for sensing integrated circuits. In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon by a fully CMOS compatible approach, as an alternative to the widely investigated silicon nanowires on silicon-on-insulator substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully depleted FinFETs with critical dimensions on the order of 20 nm and HfO2 as a high-k gate insulator have been developed and characterized, showing excellent electrical properties, subthreshold swing, SS ∼ 70 mV/dec, and on-to-off current ratio, Ion/Ioff ∼ 10(6), at room temperature. The same FinFET architecture is validated as a highly sensitive, stable, and reproducible pH sensor. An intrinsic sensitivity close to the Nernst limit, S = 57 mV/pH, is achieved. The pH response in terms of output current reaches Sout = 60%. Long-term measurements have been performed over 4.5 days with a resulting drift in time δVth/δt = 0.10 mV/h. Finally, we show the capability to reproduce experimental data with an extended three-dimensional commercial finite element analysis simulator, in both dry and wet environments, which is useful for future advanced sensor design and optimization. PMID:25817336

  18. Ionic Liquid Gating of Suspended MoS2 Field Effect Transistor Devices.

    PubMed

    Wang, Fenglin; Stepanov, Petr; Gray, Mason; Lau, Chun Ning; Itkis, Mikhail E; Haddon, Robert C

    2015-08-12

    We demonstrate ionic liquid (IL) gating of suspended few-layer MoS2 transistors, where ions can accumulate on both exposed surfaces. Upon application of IL, all free-standing samples consistently display more significant improvement in conductance than substrate-supported devices. The measured IL gate coupling efficiency is up to 4.6 × 10(13) cm(-2) V(-1). Electrical transport data reveal contact-dominated electrical transport properties and the Schottky emission as the underlying mechanism. By modulating IL gate voltage, the suspended MoS2 devices display metal-insulator transition. Our results demonstrate that more efficient charge induction can be achieved in suspended two-dimensional (2D) materials, which with further optimization, may enable extremely high charge density and novel phase transition.

  19. Low field magnetoresistance in a 2D topological insulator based on wide HgTe quantum well

    NASA Astrophysics Data System (ADS)

    Olshanetsky, E. B.; Kvon, Z. D.; Gusev, G. M.; Mikhailov, N. N.; Dvoretsky, S. A.

    2016-09-01

    Low field magnetoresistance is experimentally studied in a two-dimensional topological insulator (TI) in both diffusive and quasiballistic samples fabricated on top of a wide (14 nm) HgTe quantum well. In all cases a pronounced quasi-linear positive magnetoresistance is observed similar to that found previously in diffusive samples based on a narrow (8 nm) HgTe well. The experimental results are compared with the main existing theoretical models based on different types of disorder: sample edge roughness, nonmagnetic disorder in an otherwise coherent TI and metallic puddles due to locally trapped charges that act like local gate on the sample. The quasiballistic samples with resistance close to the expected quantized values also show a positive low-field magnetoresistance but with a pronounced admixture of mesoscopic effects.

  20. Electric-field control of spin-orbit torque in magnetically doped topological insulators

    NASA Astrophysics Data System (ADS)

    Fan, Yabin; Shao, Qiming; Kou, Xufeng; Upadhyaya, Pramey; Wang, Kang

    Recent advances of spin-orbit torques (SOTs) generated by topological insulators (TIs) have drawn increasing interest to the spin-momentum locking feature of TIs' surface states, which can potentially provide a very efficient means to generate SOTs for spintronic applications. In this presentation, we will show the magnetization switching through current-induced giant SOT in both TI/Cr-doped TI bilayer and uniformly Cr-doped TI films In particular, we show that the current-induced SOT has significant contribution from the spin-momentum locked surface states of TIs. We find that the spin torque efficiency is in general three orders of magnitude larger than those reported in heavy metal/ferromagnetic heterostructures. In the second part, we will present the electric-field control of the giant SOT in magnetically doped TIs, which suggests promising gate-controlled spin-torque device applications. The giant SOT and efficient current-induced magnetization switching exhibited by the magnetic TIs may lead to innovative spintronic applications such as ultralow power dissipation memory and logic devices. We acknowledge the supports from DARPA, FAME, SHINES and ARO programs.

  1. Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, J. W.; Liao, M. Y.; Imura, M.; Matsumoto, T.; Shibata, N.; Ikuhara, Y.; Koide, Y.

    2015-09-01

    Normally on/off operation in hydrogenated diamond (H-diamond) metal-insulator-semiconductor field-effect transistors (MISFETs) is reproducibly controlled by annealing at 180 °C. The transfer characteristics of the MISFETs reveal that the threshold gate voltage changes from 0.8 ± 0.1 to -0.5 ± 0.1 V after annealing, which indicates the MISFETs switch from normally on to normally off operation. Annealing also shifts the flat-band voltage in the capacitance-voltage curve of MIS capacitors from zero to -0.47 V. The mechanism behind the switch of normally on/off characteristics induced by annealing is explained by a change of transfer doping as follows. Adsorbed acceptors at the insulator/H-diamond interface allow the holes to accumulate in the H-diamond channel layer, so the MISFETs before annealing show normally on characteristics. Annealing causes loss of the adsorbed acceptors or provides compensatory positive charge in the insulator oxide, so the hole density in the H-diamond channel layer decreases markedly, and the MISFETs show normally off characteristics.

  2. Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters

    NASA Astrophysics Data System (ADS)

    Youh, Meng-Jey; Tseng, Chun-Lung; Jhuang, Meng-Han; Chiu, Sheng-Cheng; Huang, Li-Hu; Gong, Jyun-An; Li, Yuan-Yao

    2015-06-01

    A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes placed laterally on both sides of the cathode. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The area coverage of the screen-printed cathode and gates on the glass substrate (area: 6 × 8 cm2) is in the range of 2.04% - 4.74% depending on the set of cathode-gate electrodes on the substrate. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. A maximum luminance of 10952 cd/cm2 and a luminance uniformity of >90% can be achieved with a gate voltage of 500 V and an anode voltage of 4000 V, with an anode current of 1.44 mA and current leakage to the gate from the cathode of about 10%.

  3. Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters

    PubMed Central

    Youh, Meng-Jey; Tseng, Chun-Lung; Jhuang, Meng-Han; Chiu, Sheng-Cheng; Huang, Li-Hu; Gong, Jyun-An; Li, Yuan-Yao

    2015-01-01

    A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes placed laterally on both sides of the cathode. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The area coverage of the screen-printed cathode and gates on the glass substrate (area: 6 × 8 cm2) is in the range of 2.04% – 4.74% depending on the set of cathode-gate electrodes on the substrate. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. A maximum luminance of 10952 cd/cm2 and a luminance uniformity of >90% can be achieved with a gate voltage of 500 V and an anode voltage of 4000 V, with an anode current of 1.44 mA and current leakage to the gate from the cathode of about 10%. PMID:26042359

  4. Superconducting and Insulating Phases of Disordered FeSe Thin Films in a Magnetic Field

    NASA Astrophysics Data System (ADS)

    Schneider, R.; Zaitsev, A. G.; Fuchs, D.; von Löhneysen, H.

    2015-01-01

    The temperature-dependent electronic transport on the superconducting and insulating sides of the superconductor-insulator transition in disordered quasi-two-dimensional textured FeSe thin films is reported. The transition is driven by a perpendicular magnetic field applied to a film with its thickness close to the critical thickness of the thickness-, i.e., disorder-induced transition. The resistance in the superconducting phase might be dominated by thermally assisted flux flow, and in the phase diagram a metallic phase might intervene between the superconducting and insulating state at very low temperatures. In the insulating phase, weak insulating behavior is observed that can be described by weak localization theory of bosons, thus supporting the bosonic description of the superconductor-insulator transition in FeSe thin films.

  5. Field-effect transistor replaces bulky transformer in analog-gate circuit

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Metal-oxide semiconductor field-effect transistor /MOSFET/ analog-gate circuit adapts well to integrated circuits. It provides better system isolation than a transformer, while size and weight are appreciably reduced.

  6. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    SciTech Connect

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  7. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    NASA Astrophysics Data System (ADS)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-10-01

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  8. Study on the electrical properties of ZnO thin film transistors using pyrochlore Bi1.5Zn(1+y)Nb1.5O(7+y) gate insulators fabricated by RF sputtering

    NASA Astrophysics Data System (ADS)

    Ye, Wei; Ren, Wei; Shi, Peng; Jiang, Zhuangde

    2016-06-01

    A series of ZnO thin film transistors (TFTs) using pyrochlore Bi1.5ZnNb1.5O (BZN) thin films as gate insulators by RF sputtering has been fabricated. The relations between the zinc content and performance of BZN thin films and ZnO-TFTs are studied. The electrical properties of the ZnO-TFTs with BZN gate insulators as a function of Zn content are discussed. The research results showed that excess Zn (5 mol.%) can significantly enhance the performance of BZN thin films and ZnO-TFTs, which is mainly attributed to the compensation of Zn volatility during fabrication of BZN thin films. At an applied electric field of 250 kV/cm, the leakage current density of BZN thin films with 5 mol.% excess Zn is approximately four order of magnitude lower than that of BZN thin films without excess Zn. The subthreshold and surface state density of ZnO-TFTs were decreased from 684 and 350 mV/dec to 4.5×1012 and 2×1012 cm-2, respectively, as Zn content was increased.

  9. Liquid crystal-gated-organic field-effect transistors with in-plane drain-source-gate electrode structure.

    PubMed

    Seo, Jooyeok; Nam, Sungho; Jeong, Jaehoon; Lee, Chulyeon; Kim, Hwajeong; Kim, Youngkyoo

    2015-01-14

    We report planar liquid crystal-gated-organic field-effect transistors (LC-g-OFETs) with a simple in-plane drain-source-gate electrode structure, which can be cost-effectively prepared by typical photolithography/etching processes. The LC-g-OFET devices were fabricated by forming the LC layer (4-cyano-4'-pentylbiphenyl, 5CB) on top of the channel layer (poly(3-hexylthiophene), P3HT) that was spin-coated on the patterned indium-tin oxide (ITO)-coated glass substrates. The LC-g-OFET devices showed p-type transistor characteristics, while a current saturation behavior in the output curves was achieved for the 50-150 nm-thick P3HT (channel) layers. A prospective on/off ratio (>1 × 10(3)) was obtained regardless of the P3HT thickness, whereas the resulting hole mobility (0.5-1.1 cm(2)/(V s)) at a linear regime was dependent on the P3HT thickness. The tilted ordering of 5CB at the LC-P3HT interfaces, which is induced by the gate electric field, has been proposed as a core point of working mechanism for the present LC-g-OFETs. PMID:25478816

  10. A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification

    NASA Astrophysics Data System (ADS)

    Jiang, Chunsheng; Liang, Renrong; Wang, Jing; Xu, Jun

    2015-09-01

    A carrier-based analytical drain current model for negative capacitance symmetric double-gate field effect transistors (NC-SDG FETs) is proposed by solving the differential equation of the carrier, the Pao-Sah current formulation, and the Landau-Khalatnikov equation. The carrier equation is derived from Poisson’s equation and the Boltzmann distribution law. According to the model, an amplified semiconductor surface potential and a steeper subthreshold slope could be obtained with suitable thicknesses of the ferroelectric film and insulator layer at room temperature. Results predicted by the analytical model agree well with those of the numerical simulation from a 2D simulator without any fitting parameters. The analytical model is valid for all operation regions and captures the transitions between them without any auxiliary variables or functions. This model can be used to explore the operating mechanisms of NC-SDG FETs and to optimize device performance.

  11. Optimal Geometry Aspect Ratio of Ellipse-Shaped- Surrounding-Gate Nanowire Field Effect Transistors.

    PubMed

    Li, Yiming

    2016-01-01

    Theoretically ideally round shape of the surrounding gate may not always guarantee because of limitations of the fabrication process in surrounding-gate nanowire field effect transistors (FETs). These limitations may lead to the formation of an ellipse-shaped surrounding gate with major and minor axes of different lengths. In this paper, we for the first time study the electrical characteristics of ellipse-shaped-surrounding-gate silicon nanowire FETs with different ratio of the major and minor axes. By simultaneously simulating engineering acceptable magnitudes of the threshold voltage roll-off, the drain induced barrier lowering, the subthreshold swing, and the on-/off-state current ratio, an optimal geometry aspect ratio between the channel length and the major and minor axes of the ellipse-shaped-surrounding-gate nanowire FET is concluded. PMID:27398546

  12. Gate controlled electronic transport in monolayer MoS{sub 2} field effect transistor

    SciTech Connect

    Zhou, Y. F.; Wang, B.; Yu, Y. J.; Wei, Y. D. E-mail: jianwang@hku.hk; Xian, H. M.; Wang, J. E-mail: jianwang@hku.hk

    2015-03-14

    The electronic spin and valley transport properties of a monolayer MoS{sub 2} are investigated using the non-equilibrium Green's function formalism combined with density functional theory. Due to the presence of strong Rashba spin orbit interaction (RSOI), the electronic valence bands of monolayer MoS{sub 2} are split into spin up and spin down Zeeman-like texture near the two inequivalent vertices K and K′ of the first Brillouin zone. When the gate voltage is applied in the scattering region, an additional strong RSOI is induced which generates an effective magnetic field. As a result, electron spin precession occurs along the effective magnetic field, which is controlled by the gate voltage. This, in turn, causes the oscillation of conductance as a function of the magnitude of the gate voltage and the length of the gate region. This current modulation due to the spin precession shows the essential feature of the long sought Datta-Das field effect transistor (FET). From our results, the oscillation periods for the gate voltage and gate length are found to be approximately 2.2 V and 20.03a{sub B} (a{sub B} is Bohr radius), respectively. These observations can be understood by a simple spin precessing model and indicate that the electron behaviors in monolayer MoS{sub 2} FET are both spin and valley related and can easily be controlled by the gate.

  13. High mobility field effect transistor based on BaSnO{sub 3} with Al{sub 2}O{sub 3} gate oxide

    SciTech Connect

    Park, Chulkwon; Kim, Useong; Ju, Chan Jong; Park, Ji Sung; Kim, Young Mo; Char, Kookrin

    2014-11-17

    We fabricated an n-type accumulation-mode field effect transistor based on BaSnO{sub 3} transparent perovskite semiconductor, taking advantage of its high mobility and oxygen stability. We used the conventional metal-insulator-semiconductor structures: (In,Sn){sub 2}O{sub 3} as the source, drain, and gate electrodes, Al{sub 2}O{sub 3} as the gate insulator, and La-doped BaSnO{sub 3} as the semiconducting channel. The Al{sub 2}O{sub 3} gate oxide was deposited by atomic layer deposition technique. At room temperature, we achieved the field effect mobility value of 17.8 cm{sup 2}/Vs and the I{sub on}/I{sub off} ratio value higher than 10{sup 5} for V{sub DS} = 1 V. These values are higher than those previously reported on other perovskite oxides, in spite of the large density of threading dislocations in the BaSnO{sub 3} on SrTiO{sub 3} substrates. However, a relatively large subthreshold swing value was found, which we attribute to the large density of charge traps in the Al{sub 2}O{sub 3} as well as the threading dislocations.

  14. Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

    PubMed

    Kim, So-Jung; Jeon, Da-Bin; Park, Jung-Ho; Ryu, Min-Ki; Yang, Jong-Heon; Hwang, Chi-Sun; Kim, Gi-Heon; Yoon, Sung-Min

    2015-03-01

    Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (μsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and μsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively.

  15. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors.

    PubMed

    Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

    2015-12-17

    A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

  16. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

    PubMed Central

    Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

    2015-01-01

    A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs. PMID:26674338

  17. O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Huang, Sen; Liu, Xinyu; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen, Kevin J.

    2015-01-01

    High quality Al2O3 film grown by atomic layer deposition (ALD), with ozone (O3) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Significant suppression of Al-O-H and Al-Al bonds in ALD-Al2O3 has been realized by substituting conventional H2O source with O3. A high dielectric breakdown E-field of 8.5 MV/cm and good TDDB behavior are achieved in a gate dielectric stack consisting of 13-nm O3-Al2O3 and 2-nm H2O-Al2O3 interfacial layer on recessed GaN. By using this 15-nm gate dielectric and a high-temperature gate-recess technique, the density of positive bulk/interface charges in normally-off AlGaN/GaN MIS-HEMTs is remarkably suppressed to as low as 0.9 × 1012 cm-2, contributing to the realization of normally-off operation with a high threshold voltage of +1.6 V and a low specific ON-resistance RON,sp of 0.49 mΩ cm2.

  18. Meta-gated channel for the discrete control of electromagnetic fields

    NASA Astrophysics Data System (ADS)

    Yang, Rui; Wang, Hui; Shi, Ayuan; Zhang, Aofang; Wang, Jing; Gao, Dongxing; Lei, Zhenya; Hu, Bowei

    2016-08-01

    We demonstrate the meta-gate controlled wave propagation through multiple metallic plates with properly devised sub-wavelength defect apertures. Different from using gradient refractive-index meta-materials or phase-discontinuity meta-surfaces to produce the discrepancy between the incident angle and the refractive angle, our technique redirects electromagnetic fields by setting-up discrete transmission gateways between adjacent meta-gates and creates the perfect channels for the wave propagation. Electromagnetic fields can be assigned in the response of the driving frequency of meta-gates with extraordinary transmissions and propagate simply relying on their pre-set locations as illustrated by the meta-gate guided electromagnetic fields travelling in the paths of the Silk-Road and the contour line of Xi'an city where the Silk-Road starts. The meta-gate concept, offering the feasibility of the discrete control of electromagnetic fields with gating routes, may pave an alternative way for precisely transmitting of signals and efficiently sharing of resource in the communication.

  19. Stark shift and field ionization of arsenic donors in {sup 28}Si-silicon-on-insulator structures

    SciTech Connect

    Lo, C. C. Morton, J. J. L.; Simmons, S.; Lo Nardo, R.; Weis, C. D.; Schenkel, T.; Tyryshkin, A. M.; Lyon, S. A.; Meijer, J.; Rogalla, D.; Bokor, J.

    2014-05-12

    We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified {sup 28}Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the {sup 28}Si-SOI layer and find a contact hyperfine Stark parameter of η{sub a} = −1.9 ± 0.7 × 10{sup −3} μm{sup 2}/V{sup 2}. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.

  20. Environmentally stable flexible metal-insulator-metal capacitors using zirconium-silicate and hafnium-silicate thin film composite materials as gate dielectrics.

    PubMed

    Meena, Jagan Singh; Chu, Min-Ching; Wu, Chung-Shu; Ravipati, Srikanth; Ko, Fu-Hsiang

    2011-08-01

    Fully flexible metal-insulator-metal (MIM) capacitors fabricated on 25 microm thin polyimide (PI) substrates via the surface sol-gel process using 10-nm-thick zirconium-silicate (ZrSixOy) and hafnium-silicate (HfSimOn) films as gate dielectrics. The surface morphology of the ZrSixOy and HfSimOn films were investigated using atomic force microscopy and scanning electron microscopy, which confirmed that continuous and crack-free surface growth had occurred on the PI. Both the films treated with oxygen (O2) plasma and annealing (ca. 250 degrees C) consisted of amorphous phase; confirmed by X-ray diffraction. We employed X-ray photoelectron spectroscopy (XPS) at high resolution to examine the chemical composition of the films subjected to various treatment conditions. The shift of the XPS peaks towards higher binding energy revealed the O2 plasma-pretreatment followed by annealing was the most effective process to the surface oxidation at relatively low-temperature, for further passivate the grease traps and making dielectric films thermally stable. The ZrSixOy and HfSimOn films in sandwich-like MIM configuration on the PI substrates exhibited the low leakage current densities of 7.1 x 10(-9) and 8.4 x 10(-9) A/cm2 at applied electric field of 10 MV/cm and maximum capacitance densities of 7.5 and 5.3 fF/microm2 at 1 MHz, respectively. In addition, the ZrSixOy and HfSimOn films in MIM capacitors showed the estimated dielectric constants of 8.2 and 6.0, respectively. Prior to use of flexible MIM capacitors in advanced flexible electronic devices; the reliability test was studied by applying day-dependent leakage current density measurements up to 30 days. These films of silicate-surfactant mesostructured materials have special interest to be used as gate dielectrics in future for flexible metal-oxide-semiconductor devices.

  1. Semi-flexible gas-insulated transmission line using electric field stress shields

    DOEpatents

    Cookson, Alan H.; Dale, Steinar J.; Bolin, Philip C.

    1982-12-28

    A gas-insulated transmission line includes an outer sheath, an inner conductor, an insulating gas electrically insulating the inner conductor from the outer sheath, and insulating supports insulatably supporting the inner conductor within the outer sheath. The inner conductor is provided with flexibility by use of main conductor sections which are joined together through a conductor hub section and flexible flexing elements. Stress shields are provided to control the electric field at the locations of the conductor hub sections where the insulating supports are contacting the inner conductor. The flexing elements and the stress shields may also be utilized in connection with a plug and socket arrangement for providing electrical connection between main conductor sections.

  2. Semi-flexible gas-insulated transmission line using electric field stress shields

    DOEpatents

    Cookson, A.H.; Dale, S.J.; Bolin, P.C.

    1982-12-28

    A gas-insulated transmission line includes an outer sheath, an inner conductor, an insulating gas electrically insulating the inner conductor from the outer sheath, and insulating supports insulatably supporting the inner conductor within the outer sheath. The inner conductor is provided with flexibility by use of main conductor sections which are joined together through a conductor hub section and flexible flexing elements. Stress shields are provided to control the electric field at the locations of the conductor hub sections where the insulating supports are contacting the inner conductor. The flexing elements and the stress shields may also be utilized in connection with a plug and socket arrangement for providing electrical connection between main conductor sections. 10 figs.

  3. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    SciTech Connect

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-11-14

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

  4. Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Asahara, Ryohei; Nozaki, Mikito; Yamada, Takahiro; Ito, Joyo; Nakazawa, Satoshi; Ishida, Masahiro; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2016-10-01

    The superior physical and electrical properties of aluminum oxynitride (AlON) gate dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface quality were demonstrated by direct AlON deposition and subsequent annealing. Nitrogen incorporation into alumina was proven to be beneficial both for suppressing intermixing at the insulator/AlGaN interface and reducing the number of electrical defects in Al2O3 films. Consequently, we achieved high-quality AlON/AlGaN/GaN metal-oxide-semiconductor capacitors with improved stability against charge injection and a reduced interface state density as low as 1.2 × 1011 cm-2 eV-1. The impact of nitrogen incorporation into the insulator will be discussed on the basis of experimental findings.

  5. Flexible gas insulated transmission line having regions of reduced electric field

    DOEpatents

    Cookson, Alan H.; Fischer, William H.; Yoon, Kue H.; Meyer, Jeffry R.

    1983-01-01

    A gas insulated transmission line having radially flexible field control means for reducing the electric field along the periphery of the inner conductor at predetermined locations wherein the support insulators are located. The radially flexible field control means of the invention includes several structural variations of the inner conductor, wherein careful controlling of the length to depth of surface depressions produces regions of reduced electric field. Several embodiments of the invention dispose a flexible connector at the predetermined location along the inner conductor where the surface depressions that control the reduced electric field are located.

  6. Field programmable gate arrays: Evaluation report for space-flight application

    NASA Technical Reports Server (NTRS)

    Sandoe, Mike; Davarpanah, Mike; Soliman, Kamal; Suszko, Steven; Mackey, Susan

    1992-01-01

    Field Programmable Gate Arrays commonly called FPGA's are the newer generation of field programmable devices and offer more flexibility in the logic modules they incorporate and in how they are interconnected. The flexibility, the number of logic building blocks available, and the high gate densities achievable are why users find FPGA's attractive. These attributes are important in reducing product development costs and shortening the development cycle. The aerospace community is interested in incorporating this new generation of field programmable technology in space applications. To this end, a consortium was formed to evaluate the quality, reliability, and radiation performance of FPGA's. This report presents the test results on FPGA parts provided by ACTEL Corporation.

  7. High-performance Bi(2)Te(3)-based topological insulator film magnetic field detector.

    PubMed

    Zhang, H B; Li, H; Shao, J M; Li, S W; Bao, D H; Yang, G W

    2013-11-27

    Topological insulators with the nanoscaled metallic surface state (3-5 nm) are actually of typical functional nanostructures. Significant efforts have been devoted to study new families of topological insulators and identifications of topological surface state, as well as fundamental physics issues relating to spin-polarized surface electronic states in the past few years. However, transport investigations that can provide direct experimental evidence for potentially practical applications of topological insulators are limited, and realization of functional devices based on topological insulators is still under exploration. Here, using the Sn-doping Bi2Te3 polycrystalline topological insulator films, we fabricated high-performance current-controlled magnetic field detectors. When a parallel magnetic field is applied, the as-fabricated device exhibits a stable and reproducible magneto-resistance (MR) switching behavior, and the corresponding MR ratio can be modulated by the applied current. Even under such a low magnetic field (0.5 kG), the device still shows a distinguishable MR switching performance, suggesting that topological insulator devices are very sensitive to external stimulation and potentially applicable to weak magnetic field detection.

  8. 100-nm-size ferroelectric-gate field-effect transistor with 108-cycle endurance

    NASA Astrophysics Data System (ADS)

    Van Hai, Le; Takahashi, Mitsue; Zhang, Wei; Sakai, Shigeki

    2015-08-01

    The fabrication process of 100-nm-size ferroelectric-gate field-effect transistors (FeFETs) with high endurance was reported. The FeFETs had Pt/Sr0.8Ca0.2Bi2Ta2O9 (SCBT)/HfO2/Si stacks where the Pt gate length was 100 nm. The FeFETs were successfully fabricated by integrating many technologies such as fine patterning of etching masks by electron-beam lithography, precise anisotropic etching of the gate stacks, well-controlled ion implantation for gate-self-aligned sources and drains, and the sidewall-cover process that we had developed. Good performances of the FeFETs were characterized by the endurance of 108 program-and-erase cycles with negligible threshold-voltage shift and good drain-current retention for 3.98 × 105 s.

  9. Thermoelectric Properties of Non-Metallic Topological Insulator Bi2 Te 3 at High Magnetic Fields

    NASA Astrophysics Data System (ADS)

    Qu, Dong-Xia; Hor, Yew San; Cava, Robert J.; Ong, N. Phuan; Princeton University Team

    2011-03-01

    Three-dimensional topological insulators are a new class of electronic systems characterized by a bulk insulating state and conducting surface states with Dirac-like energy-momentum dispersion [1, 2]. One of the interesting aspects of this material is how the surface states affect thermoelectric properties of the whole electronic system, given that the bismuth based topological insulators are also excellent thermoelectric materials. We studied the low-temperature thermoelectric transport properties of high-mobility bulk topological insulator Bi 2 Te 3 at high magnetic fields up to 35 T. We found remarkably large quantum oscillations in the thermopower of the surface states over a field range of 14 to 35 T. The existence of a non-zero Berry's phase in surface electrons is confirmed from the magneto-oscillations of both thermopower and magnetoresistance. Supported by NSF-MRSEC under Grant DMR 08-19860.

  10. The Dilemma of Field Experience Assessment: Enhancing Professional Development or Fulfilling a Gate-Keeping Function?

    ERIC Educational Resources Information Center

    Cheng, May May-hung; Tang, Sylvia Yee-fan

    2008-01-01

    The field experience component in a teacher education programme serves both a gate-keeping function and a formative purpose that supports student teacher development. The authors were members of a research team which took care of the re-design of the assessment instrument for the field experience component of a teacher education programme, as well…

  11. Phase separation between conductive and insulative materials induced by the electric field

    NASA Astrophysics Data System (ADS)

    Nagamine, Yuko

    2016-07-01

    To demonstrate that phase separation is a main mechanism of pattern formation for one of the spatiotemporal patterns emerging in the Ag and Sb electrodeposition system, I performed numerical simulations to model the mixed system of conductive and insulative materials under a steady electric field. For such a dissipative system, I derived the extended Cahn-Hilliard equation using Onsager's variational principle. My results demonstrate that conductive and insulative materials phase separate spatially under the constant-current mode.

  12. Phase separation between conductive and insulative materials induced by the electric field.

    PubMed

    Nagamine, Yuko

    2016-07-01

    To demonstrate that phase separation is a main mechanism of pattern formation for one of the spatiotemporal patterns emerging in the Ag and Sb electrodeposition system, I performed numerical simulations to model the mixed system of conductive and insulative materials under a steady electric field. For such a dissipative system, I derived the extended Cahn-Hilliard equation using Onsager's variational principle. My results demonstrate that conductive and insulative materials phase separate spatially under the constant-current mode. PMID:27575064

  13. Gap Filling Ceramic Insulating Putty for High Field Magnets

    NASA Astrophysics Data System (ADS)

    Rice, J. A.; Rice, H. M.

    2008-03-01

    Gaps between the A15 superconducting cable and its supports can sometimes occur requiring expensive rework of the support or filling with a non-optimal material. Recently, a new ceramic putty has been developed that can fill these gaps to fully support the superconducting cable. This ceramic material can withstand the extreme temperature differences between the high temperature heat treatment and the cryogenic operation. Significant performance improvements have been made that will enable the insulating putty to be used in some accelerator magnet systems. Processing methods will be discussed as well as strength and thermal data.

  14. Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

    NASA Technical Reports Server (NTRS)

    Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat Duen

    2005-01-01

    Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

  15. Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

    NASA Technical Reports Server (NTRS)

    Phillips, Thomas A.; Macleod, Todd C.; Ho, Fat D.

    2006-01-01

    Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

  16. The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme

    NASA Astrophysics Data System (ADS)

    Liao, M.-H.; Huang, S. C.

    2015-08-01

    In this work, the tetragonal-phase BaTiO3 high dielectric (HK) layer and the magnetic FePt metal gate (MG) film are proposed to be the gate stack scheme on the Ge three dimensional (3D) n-type multi-gate-field-effect transistors (FETs). The ˜75% dielectric constant (κ-value) improvement, ˜100× gate leakage (Jg) reduction, and ˜70% on-state current (Ion) enhancement are achieved due to the colossal magneto-capacitance effect. The magnetic field from the magnetic FePt MG film couples and triggers more dipoles in the BaTiO3 HK layer and then results in the super gate stack characteristics. The promising transistor's performance (˜200 μA/μm on the device with the gate length Lch = 60 nm) on the high mobility (Ge) material in the 3D n-type multi-gate-FETs device structure demonstrated in this work provides the useful solution for the future advanced logic device design.

  17. A hydrogel capsule as gate dielectric in flexible organic field-effect transistors

    SciTech Connect

    Dumitru, L. M.; Manoli, K.; Magliulo, M.; Torsi, L.; Ligonzo, T.; Palazzo, G.

    2015-01-01

    A jellified alginate based capsule serves as biocompatible and biodegradable electrolyte system to gate an organic field-effect transistor fabricated on a flexible substrate. Such a system allows operating thiophene based polymer transistors below 0.5 V through an electrical double layer formed across an ion-permeable polymeric electrolyte. Moreover, biological macro-molecules such as glucose-oxidase and streptavidin can enter into the gating capsules that serve also as delivery system. An enzymatic bio-reaction is shown to take place in the capsule and preliminary results on the measurement of the electronic responses promise for low-cost, low-power, flexible electronic bio-sensing applications using capsule-gated organic field-effect transistors.

  18. Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors

    NASA Astrophysics Data System (ADS)

    Kawanago, Takamasa; Oda, Shunri

    2016-01-01

    In this study, we apply self-assembled-monolayer (SAM)-based gate dielectrics to the fabrication of molybdenum disulfide (MoS2) field-effect transistors. A simple fabrication process involving the selective formation of a SAM on metal oxides in conjunction with the dry transfer of MoS2 flakes was established. A subthreshold slope (SS) of 69 mV/dec and no hysteresis were demonstrated with the ultrathin SAM-based gate dielectrics accompanied by a low gate leakage current. The small SS and no hysteresis indicate the superior interfacial properties of the MoS2/SAM structure. Cross-sectional transmission electron microscopy revealed a sharp and abrupt interface of the MoS2/SAM structure. The SAM-based gate dielectrics are found to be applicable to the fabrication of low-voltage MoS2 field-effect transistors and can also be extended to various layered semiconductor materials. This study opens up intriguing possibilities of SAM-based gate dielectrics in functional electronic devices.

  19. Sensing small neurotransmitter-enzyme interaction with nanoporous gated ion-sensitive field effect transistors.

    PubMed

    Kisner, Alexandre; Stockmann, Regina; Jansen, Michael; Yegin, Ugur; Offenhäusser, Andreas; Kubota, Lauro Tatsuo; Mourzina, Yulia

    2012-01-15

    Ion-sensitive field effect transistors with gates having a high density of nanopores were fabricated and employed to sense the neurotransmitter dopamine with high selectivity and detectability at micromolar range. The nanoporous structure of the gates was produced by applying a relatively simple anodizing process, which yielded a porous alumina layer with pores exhibiting a mean diameter ranging from 20 to 35 nm. Gate-source voltages of the transistors demonstrated a pH-dependence that was linear over a wide range and could be understood as changes in surface charges during protonation and deprotonation. The large surface area provided by the pores allowed the physical immobilization of tyrosinase, which is an enzyme that oxidizes dopamine, on the gates of the transistors, and thus, changes the acid-base behavior on their surfaces. Concentration-dependent dopamine interacting with immobilized tyrosinase showed a linear dependence into a physiological range of interest for dopamine concentration in the changes of gate-source voltages. In comparison with previous approaches, a response time relatively fast for detecting dopamine was obtained. Additionally, selectivity assays for other neurotransmitters that are abundantly found in the brain were examined. These results demonstrate that the nanoporous structure of ion-sensitive field effect transistors can easily be used to immobilize specific enzyme that can readily and selectively detect small neurotransmitter molecule based on its acid-base interaction with the receptor. Therefore, it could serve as a technology platform for molecular studies of neurotransmitter-enzyme binding and drugs screening.

  20. Gate dielectric surface treatments for performance improvement of poly(3-hexylthiophene-2,5-diyl) based organic field-effect transistors

    NASA Astrophysics Data System (ADS)

    Nawaz, Ali; de, Cristiane, , Col; Cruz-Cruz, Isidro; Kumar, Anshu; Kumar, Anil; Hümmelgen, Ivo A.

    2015-08-01

    We report on enhanced performance in poly(3-hexylthiophene-2,5-diyl) (P3HT) based organic field effect transistors (OFETs) achieved by improvement in hole transport along the channel near the insulator/semiconductor (I/S) interface. The improvement in hole transport is demonstrated to occur very close to the I/S interface, after treatment of the insulator layer with sodium dodecyl sulfate (SDS). SDS is an anionic surfactant, with negatively charged heads, known for formation of micelles above critical micelle concentration (CMC), which contribute to the passivation of positively charged traps. Investigation of field-effect mobility (μFET) as a function of channel bottleneck thickness in OFETs reveals the favorable gate voltage regime where mobility is the highest. In addition, it shows that the gate dielectric surface treatment not only leads to an increase in mobility in that regime, but also displaces charge transport closer to the interface, hence pointing toward passivation of the charge traps at I/S interface. OFETs with SDS treatment were compared with untreated and vitamin C or hexadecyltrimethylammonium bromide (CTAB) treated OFETs. All the treatments resulted in significant improvements in specific dielectric capacitance, μFET, on/off current ratio and transconductance.

  1. Field evaporation of insulators and semiconductors: Theoretical insights for ZnO.

    PubMed

    Karahka, Markus; Kreuzer, H J

    2015-12-01

    We look at the new challenges associated with Atom Probe Tomography of insulators and semiconductors with regard to local fields inside and on the surface of such materials. The theoretical discovery that in high fields the band gap in these materials is drastically reduced to the point where at the evaporation field strength it vanishes will be crucial in our discussion. To understand Atom Probe results on the field evaporation of insulators and semiconductors we use density functional theory on ZnO clusters to follow the structural and electronic changes during field evaporation and to obtain potential energy curves, HOMO-LUMO gaps, field distributions, desorption pathways and fragments, dielectric constants, and polarizabilities. We also examine the effects of electric field reversal on the evaporation of ZnO and compare the results with Si. PMID:25825027

  2. Field evaporation of insulators and semiconductors: Theoretical insights for ZnO.

    PubMed

    Karahka, Markus; Kreuzer, H J

    2015-12-01

    We look at the new challenges associated with Atom Probe Tomography of insulators and semiconductors with regard to local fields inside and on the surface of such materials. The theoretical discovery that in high fields the band gap in these materials is drastically reduced to the point where at the evaporation field strength it vanishes will be crucial in our discussion. To understand Atom Probe results on the field evaporation of insulators and semiconductors we use density functional theory on ZnO clusters to follow the structural and electronic changes during field evaporation and to obtain potential energy curves, HOMO-LUMO gaps, field distributions, desorption pathways and fragments, dielectric constants, and polarizabilities. We also examine the effects of electric field reversal on the evaporation of ZnO and compare the results with Si.

  3. Electrolyte-gated organic field-effect transistor for selective reversible ion detection.

    PubMed

    Schmoltner, Kerstin; Kofler, Johannes; Klug, Andreas; List-Kratochvil, Emil J W

    2013-12-17

    An ion-sensitive electrolyte-gated organic field-effect transistor for selective and reversible detection of sodium (Na(+) ) down to 10(-6) M is presented. The inherent low voltage - high current operation of these transistors in combination with a state-of-the-art ion-selective membrane proves to be a novel, versatile modular sensor platform.

  4. Systems and methods for detecting a failure event in a field programmable gate array

    NASA Technical Reports Server (NTRS)

    Ng, Tak-Kwong (Inventor); Herath, Jeffrey A. (Inventor)

    2009-01-01

    An embodiment generally relates to a method of self-detecting an error in a field programmable gate array (FPGA). The method includes writing a signature value into a signature memory in the FPGA and determining a conclusion of a configuration refresh operation in the FPGA. The method also includes reading an outcome value from the signature memory.

  5. An Undergraduate Course and Laboratory in Digital Signal Processing with Field Programmable Gate Arrays

    ERIC Educational Resources Information Center

    Meyer-Base, U.; Vera, A.; Meyer-Base, A.; Pattichis, M. S.; Perry, R. J.

    2010-01-01

    In this paper, an innovative educational approach to introducing undergraduates to both digital signal processing (DSP) and field programmable gate array (FPGA)-based design in a one-semester course and laboratory is described. While both DSP and FPGA-based courses are currently present in different curricula, this integrated approach reduces the…

  6. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Park, Sang-Hee Ko; Choi, Kyung Cheol

    2016-05-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al2O3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔVth) was 0 V even after a PBS time (tstress) of 3000 s under a gate voltage (VG) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔVth value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔVth values resulting from PBS quantitatively, the average oxide charge trap density (NT) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher NT resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of NT near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  7. Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

    NASA Astrophysics Data System (ADS)

    Xiao, Y. G.; Chen, Z. J.; Tang, M. H.; Tang, Z. H.; Yan, S. A.; Li, J. C.; Gu, X. C.; Zhou, Y. C.; Ouyang, X. P.

    2012-12-01

    The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. The derived results demonstrated that the NC-SG-MFS-FET displays superior electrical properties compared with that of the traditional SG-MIS-FET, in terms of better electrostatic control of the gate electrode over the channel, smaller subthreshold swing (S < 60 mV/dec), and bigger value of ION. It is expected that this investigation may provide some insight into the design and performance improvement for the fast switching and low power dissipation applications of ferroelectric FETs.

  8. Extended-gate organic field-effect transistor for the detection of histamine in water

    NASA Astrophysics Data System (ADS)

    Minamiki, Tsukuru; Minami, Tsuyoshi; Yokoyama, Daisuke; Fukuda, Kenjiro; Kumaki, Daisuke; Tokito, Shizuo

    2015-04-01

    As part of our ongoing research program to develop health care sensors based on organic field-effect transistor (OFET) devices, we have attempted to detect histamine using an extended-gate OFET. Histamine is found in spoiled or decayed fish, and causes foodborne illness known as scombroid food poisoning. The new OFET device possesses an extended gate functionalized by carboxyalkanethiol that can interact with histamine. As a result, we have succeeded in detecting histamine in water through a shift in OFET threshold voltage. This result indicates the potential utility of the designed OFET devices in food freshness sensing.

  9. Control of Threshold Voltage for Top-Gated Ambipolar Field-Effect Transistor by Gate Buffer Layer.

    PubMed

    Khim, Dongyoon; Shin, Eul-Yong; Xu, Yong; Park, Won-Tae; Jin, Sung-Ho; Noh, Yong-Young

    2016-07-13

    The threshold voltage and onset voltage for p-channel and n-channel regimes of solution-processed ambipolar organic transistors with top-gate/bottom-contact (TG/BC) geometry were effectively tuned by gate buffer layers in between the gate electrode and the dielectric. The work function of a pristine Al gate electrode (-4.1 eV) was modified by cesium carbonate and vanadium oxide to -2.1 and -5.1 eV, respectively, which could control the flat-band voltage, leading to a remarkable shift of transfer curves in both negative and positive gate voltage directions without any side effects. One important feature is that the mobility of transistors is not very sensitive to the gate buffer layer. This method is simple but useful for electronic devices where the threshold voltage should be precisely controlled, such as ambipolar circuits, memory devices, and light-emitting device applications. PMID:27323003

  10. Design and fabrication of high-performance diamond triple-gate field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, Jiangwei; Ohsato, Hirotaka; Wang, Xi; Liao, Meiyong; Koide, Yasuo

    2016-10-01

    The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device’s electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET’s output current (174.2 mA mm‑1) is much higher than that of the planar-type device (45.2 mA mm‑1), and the on/off ratio and subthreshold swing are more than 108 and as low as 110 mV dec‑1, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications.

  11. Design and fabrication of high-performance diamond triple-gate field-effect transistors

    PubMed Central

    Liu, Jiangwei; Ohsato, Hirotaka; Wang, Xi; Liao, Meiyong; Koide, Yasuo

    2016-01-01

    The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device’s electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET’s output current (174.2 mA mm−1) is much higher than that of the planar-type device (45.2 mA mm−1), and the on/off ratio and subthreshold swing are more than 108 and as low as 110 mV dec−1, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications. PMID:27708372

  12. Organic Gate Silicon Field Effect Transistors with Poly Methylmethacrylate Films for Science Education

    NASA Astrophysics Data System (ADS)

    Hirose, Fumihiko; Miyagi, Tatsuro; Narita, Yuzuru

    We have developed an easy fabrication method of Si field effect transistors (FETs) with poly (methyl methacrylate) (PMMA) gate films for science education. In this process, we can easily fabricate the silicon FETs only by means of metal deposition and thermal diffusion without any lithography processes. The organic isolation films of PMMA can be deposited by casting or painting at room temperature in air. The metal-organic-semiconductor FETs with PMMA exhibited almost the same drain current — gate voltage characteristics as those of conventional Si metal-oxide-semiconductor FETs, which are suitable for the education material of semiconductor engineering. The organic gate Si FETs can be used not only for education but also as thin film transistors for active matrix displays.

  13. Design Architecture of field-effect transistor with back gate electrode for biosensor application

    NASA Astrophysics Data System (ADS)

    Fathil, M. F. M.; Arshad, M. K. Md.; Hashim, U.; Ruslinda, A. R.; Gopinath, Subash C. B.; M. Nuzaihan M., N.; Ayub, R. M.; Adzhri, R.; Zaki, M.; Azman, A. H.

    2016-07-01

    This paper presents the preparation method of photolithography chrome mask design used in fabrication process of field-effect transistor with back gate biasing based biosensor. Initially, the chrome masks are designed by studying the process flow of the biosensor fabrication, followed by drawing of the actual chrome mask using the AutoCAD software. The overall width and length of the device is optimized at 16 mm and 16 mm, respectively. Fabrication processes of the biosensor required five chrome masks, which included source and drain formation mask, the back gate area formation mask, electrode formation mask, front gate area formation mask, and passivation area formation mask. The complete chrome masks design will be sent for chrome mask fabrication and for future use in biosensor fabrication.

  14. Tuning the threshold voltage in electrolyte-gated organic field-effect transistors

    PubMed Central

    Kergoat, Loïg; Herlogsson, Lars; Piro, Benoit; Pham, Minh Chau; Horowitz, Gilles; Crispin, Xavier; Berggren, Magnus

    2012-01-01

    Low-voltage organic field-effect transistors (OFETs) promise for low power consumption logic circuits. To enhance the efficiency of the logic circuits, the control of the threshold voltage of the transistors are based on is crucial. We report the systematic control of the threshold voltage of electrolyte-gated OFETs by using various gate metals. The influence of the work function of the metal is investigated in metal-electrolyte-organic semiconductor diodes and electrolyte-gated OFETs. A good correlation is found between the flat-band potential and the threshold voltage. The possibility to tune the threshold voltage over half the potential range applied and to obtain depletion-like (positive threshold voltage) and enhancement (negative threshold voltage) transistors is of great interest when integrating these transistors in logic circuits. The combination of a depletion-like and enhancement transistor leads to a clear improvement of the noise margins in depleted-load unipolar inverters. PMID:22586088

  15. A CMOS-MEMS arrayed resonant-gate field effect transistor (RGFET) oscillator

    NASA Astrophysics Data System (ADS)

    Chin, Chi-Hang; Li, Ming-Huang; Chen, Chao-Yu; Wang, Yu-Lin; Li, Sheng-Shian

    2015-11-01

    A high-frequency CMOS-MEMS arrayed resonant-gate field effect transistor (RGFET) fabricated by a standard 0.35 μm 2-poly-4-metal CMOS-MEMS platform is implemented to enable a Pierce-type oscillator. The proposed arrayed RGFET exhibits low motional impedance of only 5 kΩ under a purely capacitive transduction and decent power handling capability. With such features, the implemented oscillator shows impressive phase noise of  -117 dBc Hz-1 at the far-from-carrier offset (1 MHz). In this work, we design a clamped-clamped beam (CCB) arrayed resonator utilizing a high-velocity mechanical coupling scheme to serve as the resonant-gate array. To achieve a functional arrayed RGFET, a corresponding FET array is directly placed underneath the resonant gate array to convert the motional current on the resonant-gate array into a voltage output with a tunable transconductance gain. To understand the behavior of the proposed device, an equivalent circuit model consisting of the resonant unit and FET is also provided. To verify the effects of the post-CMOS process on device performance, a conventional MOS I D current measurement is carried out. Finally, a CMOS-MEMS arrayed RGFET oscillator is realized by utilizing a Pierce oscillator architecture, showing decent phase noise performance that benefits from the array design to alleviate the nonlinear effect of the resonant gate.

  16. Measurement and Analysis of a Ferroelectric Field-Effect Transistor NAND Gate

    NASA Technical Reports Server (NTRS)

    Phillips, Thomas A.; MacLeond, Todd C.; Sayyah, Rana; Ho, Fat Duen

    2009-01-01

    Previous research investigated expanding the use of Ferroelectric Field-Effect Transistors (FFET) to other electronic devices beyond memory circuits. Ferroelectric based transistors possess unique characteris tics that give them interesting and useful properties in digital logic circuits. The NAND gate was chosen for investigation as it is one of the fundamental building blocks of digital electronic circuits. In t his paper, NAND gate circuits were constructed utilizing individual F FETs. N-channel FFETs with positive polarization were used for the standard CMOS NAND gate n-channel transistors and n-channel FFETs with n egative polarization were used for the standard CMOS NAND gate p-chan nel transistors. The voltage transfer curves were obtained for the NA ND gate. Comparisons were made between the actual device data and the previous modeled data. These results are compared to standard MOS logic circuits. The circuits analyzed are not intended to be fully opera tional circuits that would interface with existing logic circuits, bu t as a research tool to look into the possibility of using ferroelectric transistors in future logic circuits. Possible applications for th ese devices are presented, and their potential benefits and drawbacks are discussed.

  17. Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm

    NASA Astrophysics Data System (ADS)

    Vieira, N. C. S.; Borme, J.; Machado, G., Jr.; Cerqueira, F.; Freitas, P. P.; Zucolotto, V.; Peres, N. M. R.; Alpuim, P.

    2016-03-01

    Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field-effect transistors (FET) has not significantly changed, and the integration of devices at the wafer scale has generally not been sought. Currently, whenever an electrolyte-gated FET (EGFET) is used, an external, cumbersome, out-of-plane gate electrode is required. Here, an alternative architecture for graphene EGFET is presented. In this architecture, source, drain, and gate are in the same plane, eliminating the need for an external gate electrode and the use of an additional reservoir to confine the electrolyte inside the transistor active zone. This planar structure with an integrated gate allows for wafer-scale fabrication of high-performance graphene EGFETs, with carrier mobility up to 1800 cm2 V-1 s-1. As a proof-of principle, a chemical sensor was achieved. It is shown that the sensor can discriminate between saline solutions of different concentrations. The proposed architecture will facilitate the mass production of graphene sensors, materializing the potential of previous achievements in fundamental and applied graphene research.

  18. Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm.

    PubMed

    Vieira, N C S; Borme, J; Machado, G; Cerqueira, F; Freitas, P P; Zucolotto, V; Peres, N M R; Alpuim, P

    2016-03-01

    Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field-effect transistors (FET) has not significantly changed, and the integration of devices at the wafer scale has generally not been sought. Currently, whenever an electrolyte-gated FET (EGFET) is used, an external, cumbersome, out-of-plane gate electrode is required. Here, an alternative architecture for graphene EGFET is presented. In this architecture, source, drain, and gate are in the same plane, eliminating the need for an external gate electrode and the use of an additional reservoir to confine the electrolyte inside the transistor active zone. This planar structure with an integrated gate allows for wafer-scale fabrication of high-performance graphene EGFETs, with carrier mobility up to 1800 cm(2) V(-1) s(-1). As a proof-of principle, a chemical sensor was achieved. It is shown that the sensor can discriminate between saline solutions of different concentrations. The proposed architecture will facilitate the mass production of graphene sensors, materializing the potential of previous achievements in fundamental and applied graphene research. PMID:26830656

  19. Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor.

    PubMed

    Pham, Hien Thu; Yang, Jin Ho; Lee, Don-Sung; Lee, Byoung Hun; Jeong, Hyun-Dam

    2016-03-23

    Barium titanate nanocrystals (BT NCs) were prepared under solvothermal conditions at 200 °C for 24 h. The shape of the BT NCs was tuned from nanodot to nanocube upon changing the polarity of the alcohol solvent, varying the nanosize in the range of 14-22 nm. Oleic acid-passivated NCs showed good solubility in a nonpolar solvent. The effect of size and shape of the BT NCs on the ferroelectric properties was also studied. The maximum polarization value of 7.2 μC/cm(2) was obtained for the BT-5 NC thin film. Dielectric measurements of the films showed comparable dielectric constant values of BT NCs over 1-100 kHz without significant loss. Furthermore, the bottom gate In2O3 NC thin film transistors exhibited outstanding device performance with a field-effect mobility of 11.1 cm(2) V(-1) s(-1) at a low applied gate voltage with BT-5 NC/SiO2 as the gate dielectric. The low-density trapped state was observed at the interface between the In2O3 NC semiconductor and the BT-5 NCs/SiO2 dielectric film. Furthermore, compensation of the applied gate field by an electric dipole-induced dipole field within the BT-5 NC film was also observed.

  20. A compact, short-pulse laser for near-field, range-gated imaging

    SciTech Connect

    Zutavern, F.J.; Helgeson, W.D.; Loubriel, G.M.; Yates, G.J.; Gallegos, R.A.; McDonald, T.E.

    1996-12-31

    This paper describes a compact laser, which produces high power, wide-angle emission for a near-field, range-gated, imaging system. The optical pulses are produced by a 100 element laser diode array (LDA) which is pulsed with a GaAs, photoconductive semiconductor switch (PCSS). The LDA generates 100 ps long, gain-switched, optical pulses at 904 nm when it is driven with 3 ns, 400 A, electrical pulses from a high gain PCSS. Gain switching is facilitated with this many lasers by using a low impedance circuit to drive an array of lasers, which are connected electrically in series. The total optical energy produced per pulse is 10 microjoules corresponding to a total peak power of 100 kW. The entire laser system, including prime power (a nine volt battery), pulse charging, PCSS, and LDA, is the size of a small, hand-held flashlight. System lifetime, which is presently limited by the high gain PCSS, is an active area of research and development. Present limitations and potential improvements will be discussed. The complete range-gated imaging system is based on complementary technologies: high speed optical gating with intensified charge coupled devices (ICCD) developed at Los Alamos National Laboratory (LANL) and high gain, PCSS-driven LDAs developed at Sandia National Laboratories (SNL). The system is designed for use in highly scattering media such as turbid water or extremely dense fog or smoke. The short optical pulses from the laser and high speed gating of the ICCD are synchronized to eliminate the back-scattered light from outside the depth of the field of view (FOV) which may be as short as a few centimeters. A high speed photodiode can be used to trigger the intensifier gate and set the range-gated FOV precisely on the target. The ICCD and other aspects of the imaging system are discussed in a separate paper.

  1. Compact short-pulse laser for near-field range-gated imaging

    NASA Astrophysics Data System (ADS)

    Zutavern, Fred J.; Helgeson, Wesley D.; Loubriel, Guillermo M.; Yates, George J.; Gallegos, Robert A.; McDonald, Thomas E., Jr.

    1997-05-01

    This paper describes a compact laser, which produces high power, wide-angle emission for a near-field, range-gated, imaging system. The optical pulses are produced by a 100 element laser diode array (LDA) which is pulsed with a GaAs, photoconductive semiconductor switch (PCSS). The LDA generates 100 ps long, gain-switched, optical pulses at 904 nm when it is driven with 3 ns, 400 A, electrical pulses from a high gain PCSS. Gain switching is facilitated with this many lasers by using a low impedance circuit to drive an array of lasers, which are connected electrically in series. The total optical energy produced per pulse is 100 microjoules corresponding to a total peak power of 100 kW. The entire laser system, including prime power (a nine volt battery), pulse charging, PCSS, and LDA, is the size of a small, hand-held flashlight, System lifetime, which is presently limited by the high gain PCSS, is an active area of research and development. Present limitations and potential improvements will be discussed. The complete range-gated imaging system is based on complementary technologies: high speed optical gating with intensified charge coupled devices (ICCD) developed at Los Alamos National Laboratory and high gain, PCSS-driven LDAs developed at Sandia National Laboratories. The system is designed for use in highly scattering media such as turbid water or extremely dense fog or smoke. The short optical pulses from the laser and high speed gating of the ICCD are synchronized to eliminate the back-scattered light from outside the depth of the field of view (FOV) which may be as short as a few centimeters. A high speed photodiode can be used to trigger the intensifier gate and set the range-gated FOV precisely on the target. The ICCD and other aspects of the imaging system are discussed in a separate paper.

  2. High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

    NASA Astrophysics Data System (ADS)

    Ju, Sanghyun; Lee, Kangho; Yoon, Myung-Han; Facchetti, Antonio; Marks, Tobin J.; Janes, David B.

    2007-04-01

    High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics. To optimize device performance and understand the effects of interface properties, devices were fabricated with both Al and Au/Ti source/drain contacts, and device electrical properties were characterized following annealing and ozone treatment. Ozone-treated single ZnO NW-FETs with Al contacts exhibited an on-current (Ion) of ~4 µA at 0.9 Vgs and 1.0 Vds, a threshold voltage (Vth) of 0.2 V, a subthreshold slope (S) of ~130 mV/decade, an on-off current ratio (Ion:Ioff) of ~107, and a field effect mobility (μeff) of ~1175 cm2 V-1 s-1. In addition, ozone-treated ZnO NW-FETs consistently retained the enhanced device performance metrics after SiO2 passivation. A 2D device simulation was performed to explain the enhanced device performance in terms of changes in interfacial trap and fixed charge densities.

  3. O{sub 3}-sourced atomic layer deposition of high quality Al{sub 2}O{sub 3} gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

    SciTech Connect

    Huang, Sen; Liu, Xinyu Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen, Kevin J.

    2015-01-19

    High quality Al{sub 2}O{sub 3} film grown by atomic layer deposition (ALD), with ozone (O{sub 3}) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Significant suppression of Al–O–H and Al–Al bonds in ALD-Al{sub 2}O{sub 3} has been realized by substituting conventional H{sub 2}O source with O{sub 3}. A high dielectric breakdown E-field of 8.5 MV/cm and good TDDB behavior are achieved in a gate dielectric stack consisting of 13-nm O{sub 3}-Al{sub 2}O{sub 3} and 2-nm H{sub 2}O-Al{sub 2}O{sub 3} interfacial layer on recessed GaN. By using this 15-nm gate dielectric and a high-temperature gate-recess technique, the density of positive bulk/interface charges in normally-off AlGaN/GaN MIS-HEMTs is remarkably suppressed to as low as 0.9 × 10{sup 12 }cm{sup −2}, contributing to the realization of normally-off operation with a high threshold voltage of +1.6 V and a low specific ON-resistance R{sub ON,sp} of 0.49 mΩ cm{sup 2}.

  4. Supplement analysis for Greenville Gate access to Kirschbaum Field at Lawrence Livermore National Laboratory

    SciTech Connect

    1997-12-05

    The National Ignition Facility (NIF) Program proposes to provide additional access to the Kirschbaum Field construction laydown area. This additional access would alleviate traffic congestion at the East Gate entrance to Lawrence Livermore National Laboratory (LLNL) from Greenville Road during periods of heavy construction for the NIF. The new access would be located along the northeastern boundary of LLNL, about 305 m (1,000 ft) north of the East Gate entrance. The access road would extend from Greenville Road to the Kirschbaum Field construction laydown area and would traverse an existing storm water drainage channel. Two culverts, side by side, and a compacted road base would be installed across the channel. The security fence that runs parallel to Greenville Road would be modified to accommodate this new entrance and a vehicle gate would be installed at the entrance of Kirschbaum Field. The exiting shoulder along Greenville Road would be converted into a new turn lane for trucks entering the new gate. This analysis evaluates the impacts of constructing the Kirschbaum Field bridge and access gate at a different location than was analyzed in the NIF Project specific Analysis in the Final Programmatic environmental Impact Statement for Stockpile Stewardship and Management (SS and M PEIS) published in September 1996 (DOE/EIS-0236) and the Record of Decision published on December 19, 1996. Issues of concern addressed in this supplement analysis include potential impacts to wetlands downstream of the access bridge, potential impacts to the California red-legged frog (Rana aurora draytonii) listed as threatened on the federal listing pursuant to the Endangered Species Act of 1974, and potential impacts on the 100-yr floodplain along the Arroyo Las Positas.

  5. Gate-dependent carrier diffusion length in lead selenide quantum dot field-effect transistors.

    PubMed

    Otto, Tyler; Miller, Chris; Tolentino, Jason; Liu, Yao; Law, Matt; Yu, Dong

    2013-08-14

    We report a scanning photocurrent microscopy (SPCM) study of colloidal lead selenide (PbSe) quantum dot (QD) thin film field-effect transistors (FETs). PbSe QDs are chemically treated with sodium sulfide (Na2S) and coated with amorphous alumina (a-Al2O3) by atomic layer deposition (ALD) to obtain high mobility, air-stable FETs with a strongly gate-dependent conductivity. SPCM reveals a long photocurrent decay length of 1.7 μm at moderately positive gate bias that decreases to below 0.5 μm at large positive gate voltage and all negative gate voltages. After excluding other possible mechanisms including thermoelectric effects, a thick depletion width, and fringing electric fields, we conclude from photocurrent lifetime measurements that the diffusion of a small fraction of long-lived carriers accounts for the long photocurrent decay length. The long minority carrier lifetime is attributed to charge traps for majority carriers. PMID:23802707

  6. A 2-D semi-analytical model of double-gate tunnel field-effect transistor

    NASA Astrophysics Data System (ADS)

    Huifang, Xu; Yuehua, Dai; Ning, Li; Jianbin, Xu

    2015-05-01

    A 2-D semi-analytical model of double gate (DG) tunneling field-effect transistor (TFET) is proposed. By aid of introducing two rectangular sources located in the gate dielectric layer and the channel, the 2-D Poisson equation is solved by using a semi-analytical method combined with an eigenfunction expansion method. The expression of the surface potential is obtained, which is a special function for the infinite series expressions. The influence of the mobile charges on the potential profile is taken into account in the proposed model. On the basis of the potential profile, the shortest tunneling length and the average electrical field can be derived, and the drain current is then constructed by using Kane's model. In particular, the changes of the tunneling parameters Ak and Bk influenced by the drain—source voltage are also incorporated in the predicted model. The proposed model shows a good agreement with TCAD simulation results under different drain—source voltages, silicon film thicknesses, gate dielectric layer thicknesses, and gate dielectric layer constants. Therefore, it is useful to optimize the DG TFET and this provides a physical insight for circuit level design. Project supported by the National Natural Science Foundation of China (No. 61376106) and the Graduate Innovation Fund of Anhui University.

  7. Attosecond x-ray source generation from two-color polarized gating plasmonic field enhancement

    SciTech Connect

    Feng, Liqiang; Yuan, Minghu; Chu, Tianshu

    2013-12-15

    The plasmonic field enhancement from the vicinity of metallic nanostructures as well as the polarization gating technique has been utilized to the generation of the high order harmonic and the single attosecond x-ray source. Through numerical solution of the time-dependent Schrödinger equation, for moderate the inhomogeneity and the polarized angle of the two fields, we find that not only the harmonic plateau has been extended and enhanced but also the single short quantum path has been selected to contribute to the harmonic. As a result, a series of 50 as pulses around the extreme ultraviolet and the x-ray regions have been obtained. Furthermore, by investigating the other parameters effects on the harmonic emission, we find that this two-color polarized gating plasmonic field enhancement scheme can also be achieved by the multi-cycle pulses, which is much better for experimental realization.

  8. Irradiation and testing of compact ignition tokamak toroidal field coil insulation materials

    SciTech Connect

    Kanemoto, G.K.; Sherick, M.J.; Sparks, D.C.

    1990-05-01

    This report documents the results of an irradiation and testing program performed on behalf of Martin Marietta Energy Systems, Inc. in support of the Compact Ignition Tokamak Research and Development program. The purpose of the irradiation and testing program was to determine the effects of neutron and gamma irradiation on the mechanical and electrical properties of candidate toroidal field coil insulation materials. Insulation samples were irradiated in the Advanced Test Reactor (ATR) in a large I-hole. The insulation samples were irradiated within a lead shield to reduce exposure to gamma radiation to better approximate the desired ration of neutron to gamma exposure. Two different exposure levels were specified for the insulation samples. To accomplish this, the samples were encapsulated in two separate aluminum capsules; the capsules positioned at the ATR core mid-plane and at the top of the fueled region to take advantage of the axial cosine distribution of the neutron and gamma flux; and by varying the length of irradiation time of the two capsules. Disassembly of the irradiated capsules and testing of the insulation samples were performed at the Test Reactor Area (TRA) Hot Cell Facilities. Testing of the samples included shear compression static, shear compression fatigue, flexure static, and electrical resistance measurements.

  9. Sub-10 nm transparent all-around-gated ambipolar ionic field effect transistor

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Hyun; Lee, Hyomin; Jin, Tianguang; Park, Sungmin; Yoon, Byung Jun; Sung, Gun Yong; Kim, Ki-Bum; Kim, Sung Jae

    2014-12-01

    In this paper, we developed a versatile ionic field effect transistor (IFET) which has an ambipolar function for manipulating molecules regardless of their polarity and can be operated at a wide range of electrolytic concentrations (10-5 M-1 M). The IFET has circular nanochannels radially covered by gate electrodes, called ``all-around-gate'', with an aluminum oxide (Al2O3) oxide layer of a near-zero surface charge. Experimental and numerical validations were conducted for characterizing the IFET. We found that the versatility originated from the zero-charge density of the oxide layer and all-around-gate structure which increased the efficiency of the gate effect 5 times higher than a previously developed planar-gate by capacitance calculations. Our numerical model adapted Poisson-Nernst-Planck-Stokes (PNPS) formulations with additional nonlinear constraints of a fringing field effect and a counter-ion condensation and the experimental and numerical results were well matched. The device can control the transportation of ions at concentrations up to 1 M electrolyte which resembles a backflow of a shale gas extraction process. Furthermore, while traditional IFETs can manipulate either positively or negatively charged species depending on the inherently large surface charge of oxide layer, the presenting device and mechanism provide effective means to control the motion of both negatively and positively charged molecules which is important in biomolecule transport through nanochannels, medical diagnosis system and point-of-care system, etc.In this paper, we developed a versatile ionic field effect transistor (IFET) which has an ambipolar function for manipulating molecules regardless of their polarity and can be operated at a wide range of electrolytic concentrations (10-5 M-1 M). The IFET has circular nanochannels radially covered by gate electrodes, called ``all-around-gate'', with an aluminum oxide (Al2O3) oxide layer of a near-zero surface charge. Experimental and

  10. Electric Field-induced Resistance Switching in VO2 Channels using Hybrid Gate Dielectric of High- k Ta2O5/Organic material Parylene-C

    NASA Astrophysics Data System (ADS)

    Wei, Tingting; Kanki, Teruo; Fujiwara, Kohei; Chikanari, Masashi; Tanaka, Hidekazu

    Electrostatic approach utilizing field-effect transistor (FET) with correlated electron materials provides an avenue to realize the novel devices (Mott-transistor) and to clarify condensed matter physics. In this study, we have prepared Mott-transistors using vanadium dioxide (VO2) channels and employed hybrid gate dielectric consisted of high- k material Ta2O5 and organic polymer parylene-C to trigger carrier transport modulation in VO2. Obvious resistance modulations were observed in insulating regime through time-dependent resistance measurement at varied square-shaped gate bias (VG) . Contrasting to the hysteretic response in electric double layer transistor (EDLT), an abrupt resistance switching in less than of 2-second-interval enables us to attribute such immediate modulation to pure electrostatic effect. Moreover, the maximum of resistance change was identified to appear around phase transition temperature (TMI) , which confirmed the disordered heterogeneous regime at TMI. Taking advantage of systematic modulation using VO2-based devices, we demonstrated the pronounced shifts of TMI by gate bias. Another fascinating behavior on asymmetric drop in TMI by hole-electron carrier doping was observed.

  11. High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Qian, Haolei; Wang, Yewu; Fang, Yanjun; Gu, Lin; Lu, Ren; Sha, Jian

    2015-04-01

    The SiO2 films thermally grown on Si wafer have been annealed in forming atmosphere (N2:H2 = 9:1) prior to use as gate insulators in ZnO nanowire field effect transistors (ZnO NW-FETs). Without the annealing process, ZnO NW-FETs exhibit very poor performance, and most of them even cannot be depleted under a high gate voltage of -100 V; however, with the annealing process in forming atmosphere, the device characteristics can be significantly improved, exhibiting a large turn on-off ratio of ˜104 and a low sub-threshold swing ˜1 V/decade. The pre-annealing treatment of SiO2 (300 nm)/p-Si in N2/H2 ambient may significantly reduce the number of non-bridging oxygen atoms, which blocks the interaction between ZnO nanowires and SiO2 surface, and finally enhances the electrical characteristics of the back-gated ZnO NW-FETs. In addition, the FET electrode fabrication process introduced in this paper is much simpler than the traditional photo-lithography and lift-off method, which has potential applications in future device fabrication.

  12. High-performance ZnO nanowire field-effect transistor with forming gas treated SiO{sub 2} gate dielectrics

    SciTech Connect

    Qian, Haolei; Wang, Yewu E-mail: phyjsha@zju.edu.cn; Fang, Yanjun; Gu, Lin; Lu, Ren; Sha, Jian E-mail: phyjsha@zju.edu.cn

    2015-04-28

    The SiO{sub 2} films thermally grown on Si wafer have been annealed in forming atmosphere (N{sub 2}:H{sub 2} = 9:1) prior to use as gate insulators in ZnO nanowire field effect transistors (ZnO NW-FETs). Without the annealing process, ZnO NW-FETs exhibit very poor performance, and most of them even cannot be depleted under a high gate voltage of −100 V; however, with the annealing process in forming atmosphere, the device characteristics can be significantly improved, exhibiting a large turn on-off ratio of ∼10{sup 4} and a low sub-threshold swing ∼1 V/decade. The pre-annealing treatment of SiO{sub 2} (300 nm)/p-Si in N{sub 2}/H{sub 2} ambient may significantly reduce the number of non-bridging oxygen atoms, which blocks the interaction between ZnO nanowires and SiO{sub 2} surface, and finally enhances the electrical characteristics of the back-gated ZnO NW-FETs. In addition, the FET electrode fabrication process introduced in this paper is much simpler than the traditional photo-lithography and lift-off method, which has potential applications in future device fabrication.

  13. The effect of the electric-field on the phase separation of semiconductor-insulator composite film.

    PubMed

    Wang, Shiwei; Chen, Zhuo; Wang, Yao

    2015-01-14

    An electric-field induced technique has been successfully utilized to control the phase separation and the interfaces of semiconductor-insulator composite film, which provided a new research approach for scientists working in related fields.

  14. Extended-Gate Metal Oxide Semiconductor Field Effect Transistor-Based Biosensor for Detection of Deoxynivalenol

    NASA Astrophysics Data System (ADS)

    Kwon, Insu; Lee, Hee-Ho; Choi, Jinhyeon; Shin, Jang-Kyoo; Seo, Sang-Ho; Choi, Sung-Wook; Chun, Hyang Sook

    2011-06-01

    In this work, we present an extended-gate metal oxide semiconductor field effect transistor (MOSFET)-based biosensor for the detection of deoxynivalenol using a null-balancing circuit. An extended-gate MOSFET-based biosensor was fabricated by a standard complementary metal oxide semiconductor (CMOS) process and its characteristics were measured. A null-balancing circuit was used to measure the output voltage of the sensor directly, instead of measuring the drain current of the sensor. Au was used as the gate metal, which has a chemical affinity with thiol, which leads to the immobilization of a self-assembled monolayer (SAM) of mercaptohexadecanoic acid (MHDA). The SAM was used to immobilize the anti-deoxynivalenol antibody. The carboxyl group of the SAM was bound to the anti-deoxynivalenol antibody. The anti-deoxynivalenol antibody and deoxynivalenol were bound by their antigen-antibody reaction. The measurements were performed in phosphate buffered saline (PBS; pH 7.4) solution. A standard Ag/AgCl electrode was employed as a reference electrode. The bindings of a SAM, anti-deoxynivalenol antibody, and deoxynivalenol caused a variation in the output voltage of the extended-gate MOSFET-based biosensor. Surface plasmon resonance (SPR) measurement was performed to verify the interaction among the SAM, deoxynivalenol-antibody, and deoxynivalenol.

  15. Synchronization in coupled Ikeda delay systems. Experimental observations using Field Programmable Gate Arrays

    NASA Astrophysics Data System (ADS)

    Valli, D.; Muthuswamy, B.; Banerjee, S.; Ariffin, M. R. K.; Wahab, A. W. A.; Ganesan, K.; Subramaniam, C. K.; Kurths, J.

    2014-06-01

    In this work, we demonstrate the use of a Field Programmable Gate Array (FPGA) as a physical platform for realizing chaotic delay differential equations (DDE). Moreover, using our platform, we also experimentally study the synchronization between two time delayed systems. We illustrate two different experimental approaches - one is hardware co-simulation (using a Digilent Atlys with a Xilinx Spartan-6 FPGA) and the other is analog output (using a Terasic DE2-115 with an Altera Cyclone IV E FPGA).

  16. Implementing a Microcontroller Watchdog with a Field-Programmable Gate Array (FPGA)

    NASA Technical Reports Server (NTRS)

    Straka, Bartholomew

    2013-01-01

    Reliability is crucial to safety. Redundancy of important system components greatly enhances reliability and hence safety. Field-Programmable Gate Arrays (FPGAs) are useful for monitoring systems and handling the logic necessary to keep them running with minimal interruption when individual components fail. A complete microcontroller watchdog with logic for failure handling can be implemented in a hardware description language (HDL.). HDL-based designs are vendor-independent and can be used on many FPGAs with low overhead.

  17. Interdigitated gate electrode field effect transistor for the selective detection of nitrogen dioxide and diisopropyl methylphosphonate

    SciTech Connect

    Kolesar, E.S. Jr.; Wiseman, J.M. )

    1989-11-01

    An interdigitated gate electrode field effect transistor (IGE-FET) coupled to an electron beam evaporated copper phthalocyanine thin film was used to selectively detect part-per-billion concentration levels of nitrogen dioxide (NO{sub 2}) and diisopropyl methylphosphonate (DIMP). The sensor is excited with a voltage pulse, and the time- and frequency-domain responses are measured. The envelopes of the magnitude of the normalized difference frequency spectrums reveal features that unambiguously distinguish NO{sub 2} and DIMP exposures.

  18. Explicit drain current model of junctionless double-gate field-effect transistors

    NASA Astrophysics Data System (ADS)

    Yesayan, Ashkhen; Prégaldiny, Fabien; Sallese, Jean-Michel

    2013-11-01

    This paper presents an explicit drain current model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor. Analytical relationships for the channel charge densities and for the drain current are derived as explicit functions of applied terminal voltages and structural parameters. The model is validated with 2D numerical simulations for a large range of channel thicknesses and is found to be very accurate for doping densities exceeding 1018 cm-3, which are actually used for such devices.

  19. Separating electric field and thermal effects across the metal-insulator transition in vanadium oxide nanobeams

    NASA Astrophysics Data System (ADS)

    Stabile, Adam A.; Singh, Sujay K.; Wu, Tai-Lung; Whittaker, Luisa; Banerjee, Sarbajit; Sambandamurthy, G.

    2015-07-01

    We present results from an experimental study of the equilibrium and non-equilibrium transport properties of vanadium oxide nanobeams near the metal-insulator transition (MIT). Application of a large electric field in the insulating phase across the nanobeams produces an abrupt MIT, and the individual roles of thermal and non-thermal effects in driving the transition are studied. Transport measurements at temperatures (T) far below the critical temperature (Tc) of MIT, in nanoscale vanadium oxide devices, show that both T and electric field play distinctly separate, but critical roles in inducing the MIT. Specifically, at T ≪ T c , electric field dominates the MIT through an avalanche-type process, whereas thermal effects become progressively critical as T approaches Tc.

  20. Photoconductivity oscillations in surface state of three-dimensional topological insulator subjected to a magnetic field

    SciTech Connect

    Shao, J. M.; Yao, J. D.; Yang, G. W.

    2015-05-21

    We describe a theoretical study of the terahertz (THz) radiation field-induced dc transport response of the surface state of a 3D topological insulator that has been subjected to a perpendicular magnetic field. Using the Landau–Floquet state and linear response theory, we obtain the photoconductivity characteristics for various types of polarized THz field. The longitudinal photoconductivity shows a clear oscillatory dependence on ω/ω{sub B}, where ω{sub B}=v{sub F}√(2eB/ℏ). This oscillation occurs because of the oscillatory structure of the Landau density of states and occurs in agreement with the photon-assisted transitions between the different Landau levels. The THz field's polarization has a major influence on the photoconductivity. A linear transverse polarization will lead to the most obvious oscillation, while the circular polarization is next to it, but the longitudinal polarization has no influence. We also discuss the broadening effect on the impurity potential and its influence. The findings with regard to the interactions between topological insulators and THz fields actually open a path toward the development of THz device applications of topological insulators.

  1. Field-dependent molecular ionization and excitation energies: Implications for electrically insulating liquids

    NASA Astrophysics Data System (ADS)

    Davari, N.; Åstrand, P.-O.; Unge, M.; Lundgaard, L. E.; Linhjell, D.

    2014-03-01

    The molecular ionization potential has a relatively strong electric-field dependence as compared to the excitation energies which has implications for electrical insulation since the excited states work as an energy sink emitting light in the UV/VIS region. At some threshold field, all the excited states of the molecule have vanished and the molecule is a two-state system with the ground state and the ionized state, which has been hypothesized as a possible origin of different streamer propagation modes. Constrained density-functional theory is used to calculate the field-dependent ionization potential of different types of molecules relevant for electrically insulating liquids. The low singlet-singlet excitation energies of each molecule have also been calculated using time-dependent density functional theory. It is shown that low-energy singlet-singlet excitation of the type n → π* (lone pair to unoccupied π* orbital) has the ability to survive at higher fields. This type of excitation can for example be found in esters, diketones and many color dyes. For alkanes (as for example n-tridecane and cyclohexane) on the other hand, all the excited states, in particular the σ → σ* excitations vanish in electric fields higher than 10 MV/cm. Further implications for the design of electrically insulating dielectric liquids based on the molecular ionization potential and excitation energies are discussed.

  2. Neutron production using a pyroelectric driven target coupled with a gated field ionization source

    SciTech Connect

    Ellsworth, J. L.; Tang, V.; Falabella, S.; Naranjo, B.; Putterman, S.

    2013-04-19

    A palm sized, portable neutron source would be useful for widespread implementation of detection systems for shielded, special nuclear material. We present progress towards the development of the components for an ultracompact neutron generator using a pulsed, meso-scale field ionization source, a deuterated (or tritiated) titanium target driven by a negative high voltage lithium tantalate crystal. Neutron production from integrated tests using an ion source with a single, biased tungsten tip and a 3 Multiplication-Sign 1 cm, vacuum insulated crystal with a plastic deuterated target are presented. Component testing of the ion source with a single tip produces up to 3 nA of current. Dielectric insulation of the lithium tantalate crystals appears to reduce flashover, which should improve the robustness. The field emission losses from a 3 cm diameter crystal with a plastic target and 6 cm diameter crystal with a metal target are compared.

  3. A simple laser locking system based on a field-programmable gate array.

    PubMed

    Jørgensen, N B; Birkmose, D; Trelborg, K; Wacker, L; Winter, N; Hilliard, A J; Bason, M G; Arlt, J J

    2016-07-01

    Frequency stabilization of laser light is crucial in both scientific and industrial applications. Technological developments now allow analog laser stabilization systems to be replaced with digital electronics such as field-programmable gate arrays, which have recently been utilized to develop such locking systems. We have developed a frequency stabilization system based on a field-programmable gate array, with emphasis on hardware simplicity, which offers a user-friendly alternative to commercial and previous home-built solutions. Frequency modulation, lock-in detection, and a proportional-integral-derivative controller are programmed on the field-programmable gate array and only minimal additional components are required to frequency stabilize a laser. The locking system is administered from a host-computer which provides comprehensive, long-distance control through a versatile interface. Various measurements were performed to characterize the system. The linewidth of the locked laser was measured to be 0.7 ± 0.1 MHz with a settling time of 10 ms. The system can thus fully match laser systems currently in use for atom trapping and cooling applications.

  4. A simple laser locking system based on a field-programmable gate array

    NASA Astrophysics Data System (ADS)

    Jørgensen, N. B.; Birkmose, D.; Trelborg, K.; Wacker, L.; Winter, N.; Hilliard, A. J.; Bason, M. G.; Arlt, J. J.

    2016-07-01

    Frequency stabilization of laser light is crucial in both scientific and industrial applications. Technological developments now allow analog laser stabilization systems to be replaced with digital electronics such as field-programmable gate arrays, which have recently been utilized to develop such locking systems. We have developed a frequency stabilization system based on a field-programmable gate array, with emphasis on hardware simplicity, which offers a user-friendly alternative to commercial and previous home-built solutions. Frequency modulation, lock-in detection, and a proportional-integral-derivative controller are programmed on the field-programmable gate array and only minimal additional components are required to frequency stabilize a laser. The locking system is administered from a host-computer which provides comprehensive, long-distance control through a versatile interface. Various measurements were performed to characterize the system. The linewidth of the locked laser was measured to be 0.7 ± 0.1 MHz with a settling time of 10 ms. The system can thus fully match laser systems currently in use for atom trapping and cooling applications.

  5. Fabrication and characterization of a charge-biased CMOS-MEMS resonant gate field effect transistor

    NASA Astrophysics Data System (ADS)

    Chin, C. H.; Li, C. S.; Li, M. H.; Wang, Y. L.; Li, S. S.

    2014-09-01

    A high-frequency charge-biased CMOS-MEMS resonant gate field effect transistor (RGFET) composed of a metal-oxide composite resonant-gate structure and an FET transducer has been demonstrated utilizing the TSMC 0.35 μm CMOS technology with Q > 1700 and a signal-to-feedthrough ratio greater than 35 dB under a direct two-port measurement configuration. As compared to the conventional capacitive-type MEMS resonators, the proposed CMOS-MEMS RGFET features an inherent transconductance gain (gm) offered by the FET transduction capable of enhancing the motional signal of the resonator and relaxing the impedance mismatch issue to its succeeding electronics or 50 Ω-based test facilities. In this work, we design a clamped-clamped beam resonant-gate structure right above a floating gate FET transducer as a high-Q building block through a maskless post-CMOS process to combine merits from the large capacitive transduction areas of the large-width beam resonator and the high gain of the underneath FET. An analytical model is also provided to simulate the behavior of the charge-biased RGFET; the theoretical prediction is in good agreement with the experimental results. Thanks to the deep-submicrometer gap spacing enabled by the post-CMOS polysilicon release process, the proposed resonator under a purely capacitive transduction already attains motional impedance less than 10 kΩ, a record-low value among CMOS-MEMS capacitive resonators. To go one step further, the motional signal of the proposed RGFET is greatly enhanced through the FET transduction. Such a strong transmission and a sharp phase transition across 0° pave a way for future RGFET-type oscillators in RF and sensor applications. A time-elapsed characterization of the charge leakage rate for the floating gate is also carried out.

  6. Transport Properties of Anatase-TiO2 Polycrystalline-Thin-Film Field-Effect Transistors with Electrolyte Gate Layers

    NASA Astrophysics Data System (ADS)

    Horita, Ryohei; Ohtani, Kyosuke; Kai, Takahiro; Murao, Yusuke; Nishida, Hiroya; Toya, Taku; Seo, Kentaro; Sakai, Mio; Okuda, Tetsuji

    2013-11-01

    We have fabricated anatase-TiO2 polycrystalline-thin-film field-effect transistors (FETs) with poly(vinyl alcohol) (PVA), ion-liquid (IL), and ion-gel (IG) gate layers, and have tried to improve the response to gate voltage by varying the concentration of mobile ions in these electrolyte gate layers. The increase in the concentration of mobile ions by doping NaOH into the PVA gate layer or reducing the gelator in the IG gate layer markedly increases the drain-source current and reduces the driving gate voltage, which show that the mobile ions in the PVA, IL, and IG gate layers cause the formation of electric double layers (EDLs), which act as nanogap capacitors. In these TiO2-EDL-FETs, the slow formation of EDLs and the oxidation reaction at the interface between the surface of the TiO2 film and the electrolytes cause unideal FET properties. In the optimized IL and IG TiO2-EDL-FETs, the driving gate voltage is less than 1 V and the ON/OFF ratios of the transfer characteristics are about 1×104 at RT, and the nearly metallic state is realized at the interface purely by applying a gate voltage.

  7. Suspended InAs nanowire gate-all-around field-effect transistors

    SciTech Connect

    Li, Qiang; Huang, Shaoyun E-mail: hqxu@pku.edu.cn; Wang, Jingyun; Pan, Dong; Zhao, Jianhua; Xu, H. Q. E-mail: hqxu@pku.edu.cn

    2014-09-15

    Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I{sub on} of ∼10 μA and an on-off current ratio I{sub on}/I{sub off} of as high as 10{sup 6} at source-drain bias voltage of 50 mV and gate length of 1 μm with a gate underlap spacing of 1 μm from the source and from the drain. At low temperatures, the on-state current I{sub on} is only slightly reduced, while the ratio I{sub on}/I{sub off} is increased to 10{sup 7}. The field-effect mobility in the nanowire channels is also investigated and found to be ∼1500 cm{sup 2}/V s at room temperature and ∼2000 cm{sup 2}/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires.

  8. Chiral magnetism and spin liquid Mott insulators induced by synthetic gauge fields

    NASA Astrophysics Data System (ADS)

    Paramekanti, Arun; Hickey, Ciaran; Cincio, Lukasz; Papic, Zlatko; Vellat-Sadashivan, Arun; Sohal, Ramanjit

    2016-05-01

    Recent experiments using Raman-assisted tunneling or lattice-shaking have realized synthetic gauge fields and optical lattice bands with nontrivial band topology. Here we examine the effect of particle interactions in such bands, focussing on two-component fermions with local Hubbard repulsion. We show that interactions can drive the integer quantum Hall insulator into Mott insulating states which possess noncoplanar chiral magnetic textures and even chiral spin liquids with many-body topological order. We establish our results using a combination of mean field theory, strong coupling expansions, numerical exact diagonalization and DMRG methods. We also discuss possible signatures of such non-coplanar orders in Bragg scattering and noise measurements.

  9. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    NASA Astrophysics Data System (ADS)

    Menges, F.; Dittberner, M.; Novotny, L.; Passarello, D.; Parkin, S. S. P.; Spieser, M.; Riel, H.; Gotsmann, B.

    2016-04-01

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  10. Modeling PCM-Enhanced Insulation System and Benchmarking EnergyPlus against Controlled Field Data

    SciTech Connect

    Shrestha, Som S; Miller, William A; Stovall, Therese K; Desjarlais, Andre Omer; Childs, Kenneth W; Porter, Wallace D; Bhandari, Mahabir S; Coley, Steven J

    2011-01-01

    Phase-change materials (PCM) used in building envelopes appear to be a promising technology to reduce energy consumption and reduce/shift peak load. However, due to complexity in modeling the dynamic behavior of PCMs, current modeling tools either lack an accurate way of predicting the performance and impact of PCMs in buildings or validation of predicted or measured performance is not available. This paper presents a model of a PCM-enhanced dynamic-insulation system in EnergyPlus (E+) and compares the simulation results against field-measured data. Laboratory tests to evaluate thermal properties and to characterize the PCM and PCM-enhanced cellulose insulation system are also presented in this paper. Results indicate that the predicted daily average heat flux through walls from the E+ simulation was within 9% of field measured data. Future analysis will allow us to predict annual energy savings from the use of PCM in buildings.

  11. A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

    NASA Astrophysics Data System (ADS)

    Ghoreishi, Seyed Saleh; Saghafi, Kamyar; Yousefi, Reza; Moravvej-farshi, Mohammad Kazem

    2016-09-01

    In this work, we present Dual Material Gate Tunneling Graphene Nano-Ribbon Field Effect Transistors (DMG-T-GNRFET) mainly to suppress the am-bipolar current with assumption that sub-threshold swing which is one of the important characteristics of tunneling transistors must not be degraded. In the proposed structure, dual material gates with different work functions are used. Our investigations are based on numerical simulations which self-consistently solves the 2D Poisson based on an atomistic mode-space approach and Schrodinger equations, within the Non-Equilibrium Green's (NEGF). The proposed device shows lower off-current and on-off ratio becomes 5order of magnitude greater than the conventional device. Also two different short channel effects: Drain Induced Barrier Shortening (DIBS) and hot-electron effect are improved in the proposed device compare to the main structure.

  12. Triode field emitter with a gated planar carbon-nanoparticle cathode

    NASA Astrophysics Data System (ADS)

    Park, Kyung Ho; Seo, Woo Jong; Lee, Soonil; Koh, Ken Ha

    2002-07-01

    We fabricated a triode field emitter with a normal gate structure and a planar cathode of carbon nanoparticles (CNPs), which consisted of good quality graphitic sheets encapsulating metal (carbide) cores. For the quantitative analysis of the emission from the CNP triode emitter, we carried out a two-dimensional numerical calculation of electrostatic potential using the finite element method. As it turned out, a radial variation of electric field was very important to account for the emission from a planar emitting layer. By assuming the work function of 5 eV for CNPs, a set of consistent Fowler-Nordheim parameters, together with the radial position of emitting sites, were determined.

  13. Experimental Investigation on Liquid Metal Flow Distribution in Insulating Manifold under Uniform Magnetic Field

    NASA Astrophysics Data System (ADS)

    Miura, Masato; Ueki, Yoshitaka; Yokomine, Takehiko; Kunugi, Tomoaki

    2012-11-01

    Magnetohydrodynamics (MHD) problem which is caused by interaction between electrical conducting fluid flow and the magnetic field is one of the biggest problem in the liquid metal blanket of the fusion reactor. In the liquid metal blanket concept, it is necessary to distribute liquid metal flows uniformly in the manifold because imbalance of flow rates should affect the heat transfer performance directly, which leads to safety problem. While the manifold is insulated electrically as well as the flow duct, the 3D-MHD effect on the flowing liquid metal in the manifold is more apparent than that in straight duct. With reference to the flow distribution in this concept, the liquid metal flow in the electrical insulating manifold under the uniform transverse magnetic field is investigated experimentally. In this study, GaInSn is selected as working fluid. The experimental system includes the electrical magnet and the manifold test section which is made of acrylic resin for perfectly electrical insulation. The liquid metal flows in a non-symmetric 180°-turn with manifold, which consists of one upward channel and two downward channels. The flow rates in each channel are measured by electromagnetic flow meters for several combinations Reynolds number and Hartman number. The effects of magnetic field on the uniformity of flow distribution are cleared.

  14. Physiologically gated microbeam radiation using a field emission x-ray source array

    SciTech Connect

    Chtcheprov, Pavel E-mail: zhou@email.unc.edu; Burk, Laurel; Inscoe, Christina; Ger, Rachel; Hadsell, Michael; Lu, Jianping; Yuan, Hong; Zhang, Lei; Chang, Sha; Zhou, Otto E-mail: zhou@email.unc.edu

    2014-08-15

    Purpose: Microbeam radiation therapy (MRT) uses narrow planes of high dose radiation beams to treat cancerous tumors. This experimental therapy method based on synchrotron radiation has been shown to spare normal tissue at up to 1000 Gy of peak entrance dose while still being effective in tumor eradication and extending the lifetime of tumor-bearing small animal models. Motion during treatment can lead to significant movement of microbeam positions resulting in broader beam width and lower peak to valley dose ratio (PVDR), which reduces the effectiveness of MRT. Recently, the authors have demonstrated the feasibility of generating microbeam radiation for small animal treatment using a carbon nanotube (CNT) x-ray source array. The purpose of this study is to incorporate physiological gating to the CNT microbeam irradiator to minimize motion-induced microbeam blurring. Methods: The CNT field emission x-ray source array with a narrow line focal track was operated at 160 kVp. The x-ray radiation was collimated to a single 280 μm wide microbeam at entrance. The microbeam beam pattern was recorded using EBT2 Gafchromic{sup ©} films. For the feasibility study, a strip of EBT2 film was attached to an oscillating mechanical phantom mimicking mouse chest respiratory motion. The servo arm was put against a pressure sensor to monitor the motion. The film was irradiated with three microbeams under gated and nongated conditions and the full width at half maximums and PVDRs were compared. An in vivo study was also performed with adult male athymic mice. The liver was chosen as the target organ for proof of concept due to its large motion during respiration compared to other organs. The mouse was immobilized in a specialized mouse bed and anesthetized using isoflurane. A pressure sensor was attached to a mouse's chest to monitor its respiration. The output signal triggered the electron extraction voltage of the field emission source such that x-ray was generated only during a

  15. Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors

    NASA Astrophysics Data System (ADS)

    Wei, Ye; Wei, Ren; Peng, Shi; Zhuangde, Jiang

    2016-07-01

    The bottom-gate structure ZnO based thin film transistors (ZnO-TFTs) using Bi1.5Zn1.0Nb1.5O7 (BZN) thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500 °C on the performance of BZN thin films and ZnO-TFTs. XRD measurement confirmed that BZN thin films were amorphous in nature. BZN thin films annealed at 400 °C obtain the high capacitance density of 249 nF/cm2, high dielectric constant of 71, and low leakage current density of 10‑7 A/cm2 on/off current ratio and field effect mobility of ZnO-TFTs annealed at 400 °C are approximately one order of magnitude and two times, respectively higher than that of ZnO-TFTs annealed at 300 °C. When the annealing temperature is 400 °C, the electrical performance of ZnO-TFTs is enhanced remarkably. Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21 × 1012cm‑2. Project supported by the National Natural Science Foundation of China (Nos. 51332003, 51202184), the International Science & Technology Cooperation Program of China (Nos. 2010DFB13640, 2011DFA51880), and the “111 Project” of China (No. B14040).

  16. Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors

    NASA Astrophysics Data System (ADS)

    Wei, Ye; Wei, Ren; Peng, Shi; Zhuangde, Jiang

    2016-07-01

    The bottom-gate structure ZnO based thin film transistors (ZnO-TFTs) using Bi1.5Zn1.0Nb1.5O7 (BZN) thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500 °C on the performance of BZN thin films and ZnO-TFTs. XRD measurement confirmed that BZN thin films were amorphous in nature. BZN thin films annealed at 400 °C obtain the high capacitance density of 249 nF/cm2, high dielectric constant of 71, and low leakage current density of 10-7 A/cm2 on/off current ratio and field effect mobility of ZnO-TFTs annealed at 400 °C are approximately one order of magnitude and two times, respectively higher than that of ZnO-TFTs annealed at 300 °C. When the annealing temperature is 400 °C, the electrical performance of ZnO-TFTs is enhanced remarkably. Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21 × 1012cm-2. Project supported by the National Natural Science Foundation of China (Nos. 51332003, 51202184), the International Science & Technology Cooperation Program of China (Nos. 2010DFB13640, 2011DFA51880), and the “111 Project” of China (No. B14040).

  17. Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

    SciTech Connect

    Tóvári, E.; Csontos, M. Kriváchy, T.; Csonka, S.; Fürjes, P.

    2014-09-22

    The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

  18. Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO2 gate insulator

    NASA Astrophysics Data System (ADS)

    Kim, Bongjun; Jang, Seonpil; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2013-08-01

    High-performance single-walled carbon nanotube (SWCNT) thin-film transistors are fabricated by single-pass inkjet printing of SWCNTs on high-κ solution-processed ZrO2 gate dielectric. We demonstrate that an ultraviolet ozone treatment of the ZrO2 substrate is critical in achieving a uniform dispersion of sorted SWCNTs in the semiconducting channel. The resulting devices exhibit excellent performance with mobility and on/off current ratio exceeding 30 cm2 V-1 s-1 and 105, respectively, at low operating voltages (<5 V). The single-pass inkjet printing process demonstrated in this letter shows great promise as a reliable and scalable method for SWCNT based high performance electronics.

  19. Experimental study of the effects of alternating fields on HTS coils according to the winding insulation conditions

    NASA Astrophysics Data System (ADS)

    Hwang, Y. J.; Ahn, M. C.; Lee, T. S.; Lee, W. S.; Ko, T. K.

    2013-08-01

    This paper examines the effects of alternating fields on high-temperature superconducting (HTS) coils according to the winding insulation condition. Alternating fields can occur in synchronous machines (armature reaction, faults) and other devices. In superconducting synchronous machines, alternating fields affect the operational characteristics of the machine and the superconducting field coil. Therefore, a method of reducing the effects of alternating fields is necessary in superconducting synchronous design. In this study, the effects of alternating fields on the HTS field coil according to the winding insulation condition were experimentally evaluated. The experimental results show that HTS coils made using the no-insulation technique can be a solution for reducing the effects of the alternating field. These results are expected to suggest useful data for applications of HTS field coils in superconducting synchronous machines.

  20. Side-by-Side Field Evaluation of Highly Insulating Windows in the PNNL Lab Homes

    SciTech Connect

    Widder, Sarah H.; Parker, Graham B.; Baechler, Michael C.; Bauman, Nathan N.

    2012-08-01

    To examine the energy, air leakage, and thermal performance of highly insulating windows, a field evaluation was undertaken in a matched pair of all-electric, factory-built “Lab Homes” located on the Pacific Northwest National Laboratory (PNNL) campus in Richland, Washington. The “baseline” Lab Home B was retrofitted with “standard” double-pane clear aluminum-frame slider windows and patio doors, while the “experimental” Lab Home A was retrofitted with Jeld-Wen® triple-pane vinyl-frame slider windows and patio doors with a U-factor of 0.2 and solar heat gain coefficient of 0.19. To assess the window, the building shell air leakage, energy use, and interior temperatures of each home were compared during the 2012 winter heating and summer cooling seasons. The measured energy savings in Lab Home B averaged 5,821 watt-hours per day (Wh/day) during the heating season and 6,518 Wh/day during the cooling season. The overall whole-house energy savings of Lab Home B compared to Lab Home A are 11.6% ± 1.53% for the heating season and 18.4 ± 2.06% for the cooling season for identical occupancy conditions with no window coverings deployed. Extrapolating these energy savings numbers based on typical average heating degree days and cooling degree days per year yields an estimated annual energy savings of 12.2%, or 1,784 kWh/yr. The data suggest that highly insulating windows are an effective energy-saving measure that should be considered for high-performance new homes and in existing retrofits. However, the cost effectiveness of the measure, as determined by the simple payback period, suggests that highly insulating window costs continue to make windows difficult to justify on a cost basis alone. Additional reductions in costs via improvements in manufacturing and/or market penetration that continue to drive down costs will make highly insulating windows much more viable as a cost-effective energy efficiency measure. This study also illustrates that highly

  1. Tuning near field radiative heat flux through surface excitations with a metal insulator transition.

    PubMed

    van Zwol, P J; Ranno, L; Chevrier, J

    2012-06-01

    The control of heat flow is a formidable challenge due to lack of good thermal insulators. Promising new opportunities for heat flow control were recently theoretically discovered for radiative heat flow in near field, where large heat flow contrasts may be achieved by tuning electronic excitations on surfaces. Here we show experimentally that the phase transition of VO2 entails a change of surface polariton states that significantly affects radiative heat transfer in near field. In all cases the Derjaguin approximation correctly predicted radiative heat transfer in near field, but it underestimated the far field limit. Our results indicate that heat flow contrasts can be realized in near field that can be larger than those obtained in far field. PMID:23003960

  2. Magnetic-Field-Induced Insulator-Conductor Transition in SU(2) Quenched Lattice Gauge Theory

    SciTech Connect

    Buividovich, P.V.; Kharzeev, D.; Chernodub, M.N., Kalaydzhyan, T., Luschevskaya, E.V., and M.I. Polikarpov

    2010-09-24

    We study the correlator of two vector currents in quenched SU(2) lattice gauge theory with a chirally invariant lattice Dirac operator with a constant external magnetic field. It is found that in the confinement phase the correlator of the components of the current parallel to the magnetic field decays much slower than in the absence of a magnetic field, while for other components the correlation length slightly decreases. We apply the maximal entropy method to extract the corresponding spectral function. In the limit of zero frequency this spectral function yields the electric conductivity of quenched theory. We find that in the confinement phase the external magnetic field induces nonzero electric conductivity along the direction of the field, transforming the system from an insulator into an anisotropic conductor. In the deconfinement phase the conductivity does not exhibit any sizable dependence on the magnetic field.

  3. Magnetic-field-induced insulator-conductor transition in SU(2) quenched lattice gauge theory.

    PubMed

    Buividovich, P V; Chernodub, M N; Kharzeev, D E; Kalaydzhyan, T; Luschevskaya, E V; Polikarpov, M I

    2010-09-24

    We study the correlator of two vector currents in quenched SU(2) lattice gauge theory with a chirally invariant lattice Dirac operator with a constant external magnetic field. It is found that in the confinement phase the correlator of the components of the current parallel to the magnetic field decays much slower than in the absence of a magnetic field, while for other components the correlation length slightly decreases. We apply the maximal entropy method to extract the corresponding spectral function. In the limit of zero frequency this spectral function yields the electric conductivity of quenched theory. We find that in the confinement phase the external magnetic field induces nonzero electric conductivity along the direction of the field, transforming the system from an insulator into an anisotropic conductor. In the deconfinement phase the conductivity does not exhibit any sizable dependence on the magnetic field. PMID:21230764

  4. Touch sensors based on planar liquid crystal-gated-organic field-effect transistors

    NASA Astrophysics Data System (ADS)

    Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Hwajeong; Lee, Joon-Hyung; Park, Soo-Young; Kang, Inn-Kyu; Kim, Youngkyoo

    2014-09-01

    We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 μm thick LC layer (4-cyano-4'-pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 μl/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm2/Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (VD) and gate (VG) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of VD and VG. The best voltage combination was VD = -0.2 V and VG = -1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors.

  5. Ionic-Liquid Gated Few-layer MoS2 Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Perera, Meeghage; Lin, Ming-Wei; Chuang, Hsun-Jen; Chamlagain, Bhim; Wang, Chongyu; Tan, Xuebin; Cheng, Mark Ming-Cheng; Zhou, Zhixian

    2013-03-01

    We report the electrical characterization of ionic-liquid-gated bilayer and few-layer MoS2 field-effect transistors. The extrinsic mobility of our ionic-liquid-gated devices exceeds 70 cm2V-1S-1 at 250 K, which is 1-2 orders of magnitude higher than that measured in the Si back-gate configuration (without ionic liquid). These devices also show ambipolar behavior with a high ON-OFF current ratio of > 107 for electrons and > 106 for holes, and a near ideal subthreshold swing (SS) of ~ 50 mV/decade at 250 K for the electron channel. More significantly, we show that the mobility increases from ~ 100 cm2V-1S-1 at 180 K to ~ 220 cm2V-1S-1 at 77K as the temperature decreases following a μ ~ T-γ dependence with γ ~ 1, indicating that the intrinsic phonon-limited mobility can be achieved in few-layer MoS2 FETs. We attribute the enhanced device performance to the drastic reduction of the Schottky barrier width (thus higher tunneling efficiency) via highly efficient band bending at the MoS2/metal interface afforded by the extremely large electrical double layer capacitance of the ionic liquid. This work was supported by NSF (No. ECCS-1128297).

  6. N-Channel field-effect transistors with floating gates for extracellular recordings.

    PubMed

    Meyburg, Sven; Goryll, Michael; Moers, Jürgen; Ingebrandt, Sven; Böcker-Meffert, Simone; Lüth, Hans; Offenhäusser, Andreas

    2006-01-15

    A field-effect transistor (FET) for recording extracellular signals from electrogenic cells is presented. The so-called floating gate architecture combines a complementary metal oxide semiconductor (CMOS)-type n-channel transistor with an independent sensing area. This concept allows the transistor and sensing area to be optimised separately. The devices are robust and can be reused several times. The noise level of the devices was smaller than of comparable non-metallised gate FETs. In addition to the usual drift of FET devices, we observed a long-term drift that has to be controlled for future long-term measurements. The device performance for extracellular signal recording was tested using embryonic rat cardiac myocytes cultured on fibronectin-coated chips. The extracellular cell signals were recorded before and after the addition of the cardioactive isoproterenol. The signal shapes of the measured action potentials were comparable to the non-metallised gate FETs previously used in similar experiments. The fabrication of the devices involved the process steps of standard CMOS that were necessary to create n-channel transistors. The implementation of a complete CMOS process would facilitate the integration of the logical circuits necessary for signal pre-processing on a chip, which is a prerequisite for a greater number of sensor spots in future layouts. PMID:16029948

  7. Cross-linking high-k fluoropolymer gate dielectrics enhances the charge mobility in rubrene field effect transistors

    NASA Astrophysics Data System (ADS)

    Adhikari, Jwala; Gadinski, Matthew; Wang, Qing; Gomez, Enrique

    2015-03-01

    Polymer dielectrics are promising materials where the chemical flexibility enables gate insulators with desired properties. For example, polar groups can be introduced to enhance the dielectric constant, although fluctuations in chain conformations at the semiconductor-dielectric interface can introduce energetic disorder and limit charge mobilities in thin-film transistors. Here, we demonstrate a photopatternable high-K fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant between 8 and 11. The bromotrifluoroethylene moiety enables photo-crosslinking and stabilization of gate insulator films while also significantly enhancing the population of trans torsional conformations of the chains. Using rubrene single crystals as the active layer, charge mobilities exceeding 10 cm2/Vs are achieved in thin film transistors with cross-linked P(VDF-BTFE) gate dielectrics. We hypothesize that crosslinking reduces energetic disorder at the dielectric-semiconductor interface by suppressing segmental motion and controlling chain conformations of P(VDF-BTFE), thereby leading to approximately a three-fold enhancement in the charge mobility of rubrene thin-film transistors over devices incorporating uncross-linked dielectrics or silicon oxide. Center for Flexible Electronic, Penn State; The Dow Chemical Company.

  8. Superconducting proximity effect in three-dimensional topological insulators in the presence of a magnetic field

    NASA Astrophysics Data System (ADS)

    Burset, Pablo; Lu, Bo; Tkachov, Grigory; Tanaka, Yukio; Hankiewicz, Ewelina M.; Trauzettel, Björn

    2015-11-01

    The proximity-induced pair potential in a topological insulator-superconductor hybrid features an interesting superposition of a conventional spin-singlet component from the superconductor and a spin-triplet one induced by the surface state of the topological insulator. This singlet-triplet superposition can be altered by the presence of a magnetic field. We study the interplay between topological order and superconducting correlations performing a symmetry analysis of the induced pair potential, using Green functions techniques to theoretically describe ballistic junctions between superconductors and topological insulators under magnetic fields. We relate a change in the conductance from a gapped profile into one with a zero-energy peak with the transition into a topologically nontrivial regime where the odd-frequency triplet pairing becomes the dominant component in the pair potential. The nontrivial regime, which provides a signature of odd-frequency triplet superconductivity, is reached for an out-of-plane effective magnetization with strength comparable to the chemical potential of the superconductor or for an in-plane one, parallel to the normal-superconductor interface, with strength of the order of the superconducting gap. Strikingly, in the latter case, a misalignment with the interface yields an asymmetry with the energy in the conductance unless the total contribution of the topological surface state is considered.

  9. Composite fermions and the field-tuned superconductor-insulator transition

    NASA Astrophysics Data System (ADS)

    Mulligan, Michael; Raghu, S.

    2016-05-01

    In several two-dimensional films that exhibit a magnetic field-tuned superconductor to insulator transition (SIT), stable metallic phases have been observed. Building on the `dirty boson' description of the SIT, we suggest that the metallic region is analogous to the composite Fermi liquid observed about half-filled Landau levels of the two-dimensional electron gas. The composite fermions here are mobile vortices attached to one flux quantum of an emergent gauge field. The composite vortex liquid is a 2D non-Fermi liquid metal, which we argue is stable to weak quenched disorder. We describe several experimental consequences of the emergent composite vortex liquid.

  10. Effects of gate insulator using high pressure annealing on the characteristics of solid phase crystallized polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Moojin; Jin, GuangHai

    2009-04-01

    The oxidizing ambient was built using high pressure H2O vapor at 550 °C. For the solid phase crystallization (SPC) polycrystalline silicon (poly-Si) that is annealed for 1 h at 2 MPa, the oxide thickness is about 150 Å. The oxide layer is approximately 90 Å above the original surface of the poly-Si and 60 Å below the original surface. The oxide layer is used as the first gate insulator layer of thin-film transistors (TFTs). The heating at 550 °C with 2 MPa H2O vapor increased the carrier mobility from 17.6 cm2/V s of the conventional SPC process to 30.4 cm2/V s, and it reduced the absolute value of the threshold voltage (Vth) from 4.13 to 3.62 V. The subthreshold swing also decreased from 0.72 to 0.60 V/decade. This improvement is attributed mainly to the reduction in defect density at the oxide/poly-Si interface and in the poly-Si film by the high pressure annealing (HPA) process. Since the realization of excellent performance at the oxide/poly-Si interface and in poly-Si depends on the defect density, the poly-Si having the thermal oxide formed by a combined process of SPC and HPA may be well suited for fabrication of poly-Si TFTs for flat panel displays such as active matrix organic light emitting diodes.

  11. A Low Temperature, Solution-Processed Poly(4-vinylphenol), YO(x) Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor.

    PubMed

    Shin, Hyeonwoo; Kang, Chan-Mo; Chae, Hyunsik; Kim, Hyun-Gwan; Baek, Kyu-Ha; Choi, Hyoung Jin; Park, Man-Young; Do, Lee-Mi; Lee, Changhee

    2016-03-01

    Low temperature, solution-processed metal oxide thin film transistors (MEOTFTs) have been widely investigated for application in low-cost, transparent, and flexible electronics. To enlarge the application area, solution-processed gate insulators (GI) have been investigated in recent years. We investigated the effects of the organic/inorganic bi-layer GI to ZnO thin film transistors (TFTs). PVP, YO(x) nanoparticle composite, and polysilazane bi-layer showed low leakage current (-10(-8) A/cm2 in 2 MV), which are applicable in low temperature processed MEOTFTs. Polysilazane was used as an interlayer between ZnO and PVP, YO(x) nanoparticle composite as a good charge transport interface with ZnO. By applying the PVP, YO(x), nanoparticle composite/polysilazane bi-layer structure to ZnO TFTs, we successfully suppressed the off current (I(off)) to -10(-11) and fabricated good MEOTFTs in 180 degrees C.

  12. A Low Temperature, Solution-Processed Poly(4-vinylphenol), YO(x) Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor.

    PubMed

    Shin, Hyeonwoo; Kang, Chan-Mo; Chae, Hyunsik; Kim, Hyun-Gwan; Baek, Kyu-Ha; Choi, Hyoung Jin; Park, Man-Young; Do, Lee-Mi; Lee, Changhee

    2016-03-01

    Low temperature, solution-processed metal oxide thin film transistors (MEOTFTs) have been widely investigated for application in low-cost, transparent, and flexible electronics. To enlarge the application area, solution-processed gate insulators (GI) have been investigated in recent years. We investigated the effects of the organic/inorganic bi-layer GI to ZnO thin film transistors (TFTs). PVP, YO(x) nanoparticle composite, and polysilazane bi-layer showed low leakage current (-10(-8) A/cm2 in 2 MV), which are applicable in low temperature processed MEOTFTs. Polysilazane was used as an interlayer between ZnO and PVP, YO(x) nanoparticle composite as a good charge transport interface with ZnO. By applying the PVP, YO(x), nanoparticle composite/polysilazane bi-layer structure to ZnO TFTs, we successfully suppressed the off current (I(off)) to -10(-11) and fabricated good MEOTFTs in 180 degrees C. PMID:27455680

  13. Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors

    NASA Astrophysics Data System (ADS)

    Miyazawa, Tetsuya; Nakayama, Koji; Tanaka, Atsushi; Asano, Katsunori; Ji, Shi-yang; Kojima, Kazutoshi; Ishida, Yuuki; Tsuchida, Hidekazu

    2015-08-01

    Techniques to fabricate thick multi-layer 4H-SiC epitaxial wafers were studied for very high-voltage p- and n-channel insulated gate bipolar transistors (IGBTs). Multi-layer epitaxial growth, including a thick p- drift layer (˜180 μm), was performed on a 4H-SiC n+ substrate to form a p-IGBT structure. For an n-IGBT structure, an inverted growth process was employed, in which a thick n- drift layer (˜180 μm) and a thick p++ injector layer (>55 μm) were epitaxially grown. The epitaxial growth conditions were modified to attain a low defect density, a low doping concentration, and a long carrier lifetime in the drift layers. Reduction of the forward voltage drop was attempted by using carrier lifetime enhancement processes, specifically, carbon ion implantation/annealing and thermal oxidation/annealing or hydrogen annealing. Simple PiN diodes were fabricated to demonstrate the effective conductivity modulation in the thick drift layers. The forward voltage drops of the PiN diodes with the p- and n-IGBT structures promise to obtain the extremely low-loss and very high-voltage IGBTs. The change in wafer shape during the processing of the very thick multi-layer 4H-SiC is also discussed.

  14. Field programmable gate array-assigned complex-valued computation and its limits

    SciTech Connect

    Bernard-Schwarz, Maria; Zwick, Wolfgang; Klier, Jochen; Wenzel, Lothar; Gröschl, Martin

    2014-09-15

    We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.

  15. Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Šimukovič, A.; Matulionis, A.; Liberis, J.; Šermukšnis, E.; Sakalas, P.; Zhang, F.; Leach, J. H.; Avrutin, V.; Morkoç, H.

    2013-05-01

    Electron density-dependent dc, rf and power characteristics are investigated for nearly lattice-matched InAlN/AlN/GaN heterostructure field-effect transistors (HFETs). The best performance in respect to transconductance and cutoff frequency is demonstrated at the optimal gate bias of -8 V for the devices with electron sheet density of 3 × 1013 cm-2 (measured on Hall bars of as-grown heterostructures). The results are in fair agreement with the universal bias-density relation controlled by the plasmon-assisted ultrafast decay of nonequilibrium optical phonons launched by hot electrons.

  16. High-resolution full-field spatial coherence gated optical tomography using monochromatic light source

    NASA Astrophysics Data System (ADS)

    Srivastava, Vishal; Nandy, Sreyankar; Singh Mehta, Dalip

    2013-09-01

    We demonstrate dispersion free, high-resolution full-field spatial coherence gated optical tomography using spatially incoherent monochromatic light source. Spatial coherence properties of light source were synthesized by means of combining a static diffuser and vibrating multi mode fiber bundle. Due to low spatial coherence of light source, the axial resolution of the system was achieved similar to that of conventional optical coherence tomography which utilizes low temporal coherence. Experimental results of fringe visibility versus optical path difference are presented for varying numerical apertures objective lenses. High resolution optically sectioned images of multilayer onion skin, and red blood cells are presented.

  17. Field programmable gate array time counter with two-stage interpolation

    SciTech Connect

    Szymanowski, Rafal; Kalisz, Jozef

    2005-04-01

    This paper presents a precise time counter with two two-stage interpolators, integrated in a field-programmable gate array device. Interpolation is performed by a single tapped delay line with dual synchronizers in the first stage and a differential tapped delay line in the second stage. The delay-locked loop is used for indirect stabilization of the propagation time of delay elements. The counter has 200 ps resolution over the measurement range of 0-167 ms with the standard measurement uncertainty below 140 ps. A detailed analysis of influence of the flip-flop metastability on the counter accuracy is also presented.

  18. Design and test of field programmable gate arrays in space applications

    NASA Technical Reports Server (NTRS)

    Mckerracher, Priscilla L.; Cain, Russel P.; Barnett, Jon C.; Green, William S.; Kinnison, James D.

    1992-01-01

    Field Programmable Gate Arrays (FPGAU's) offer substantial benefits in terms of flexibility and design integration. In addition to qualifying this device for space applications by establishing its reliability and evaluating its sensitivity to radiation, screening the programmed devices with Automatic Test Equipment (ATE) and functional burn-in presents an interesting challenge. This paper presents a review of the design, qualification, and screening cycle employed for FPGA designs in a space program, and demonstrates the need for close interaction between design and test engineers.

  19. Reprogrammable field programmable gate array with integrated system for mitigating effects of single event upsets

    NASA Technical Reports Server (NTRS)

    Ng, Tak-kwong (Inventor); Herath, Jeffrey A. (Inventor)

    2010-01-01

    An integrated system mitigates the effects of a single event upset (SEU) on a reprogrammable field programmable gate array (RFPGA). The system includes (i) a RFPGA having an internal configuration memory, and (ii) a memory for storing a configuration associated with the RFPGA. Logic circuitry programmed into the RFPGA and coupled to the memory reloads a portion of the configuration from the memory into the RFPGA's internal configuration memory at predetermined times. Additional SEU mitigation can be provided by logic circuitry on the RFPGA that monitors and maintains synchronized operation of the RFPGA's digital clock managers.

  20. Note: The design of thin gap chamber simulation signal source based on field programmable gate array

    SciTech Connect

    Hu, Kun; Wang, Xu; Li, Feng; Jin, Ge; Lu, Houbing; Liang, Futian

    2015-01-15

    The Thin Gap Chamber (TGC) is an important part of ATLAS detector and LHC accelerator. Targeting the feature of the output signal of TGC detector, we have designed a simulation signal source. The core of the design is based on field programmable gate array, randomly outputting 256-channel simulation signals. The signal is generated by true random number generator. The source of randomness originates from the timing jitter in ring oscillators. The experimental results show that the random number is uniform in histogram, and the whole system has high reliability.

  1. Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating

    NASA Astrophysics Data System (ADS)

    Lokteva, Irina; Thiemann, Stefan; Gannott, Florentina; Zaumseil, Jana

    2013-05-01

    Semiconductor nanowire field-effect transistors (FETs) are interesting for fundamental studies of charge transport as well as possible applications in electronics. Here, we report low-voltage, low-hysteresis and ambipolar PbSe nanowire FETs using electrolyte-gating with ionic liquids and ion gels. We obtain balanced hole and electron mobilities at gate voltages below 1 V. Due to the large effective capacitance of the ionic liquids and thus high charge carrier densities electrolyte-gated nanowire FETs are much less affected by external doping and traps than nanowire FETs with traditional dielectrics such as SiO2. The observed current-voltage characteristics and on/off ratios indicate almost completely transparent Schottky barriers and efficient ambipolar charge injection into a low band gap one-dimensional semiconductor. Finally, we explore the possibility of applying these ambipolar nanowire FETs in complementary inverters for printed electronics.Semiconductor nanowire field-effect transistors (FETs) are interesting for fundamental studies of charge transport as well as possible applications in electronics. Here, we report low-voltage, low-hysteresis and ambipolar PbSe nanowire FETs using electrolyte-gating with ionic liquids and ion gels. We obtain balanced hole and electron mobilities at gate voltages below 1 V. Due to the large effective capacitance of the ionic liquids and thus high charge carrier densities electrolyte-gated nanowire FETs are much less affected by external doping and traps than nanowire FETs with traditional dielectrics such as SiO2. The observed current-voltage characteristics and on/off ratios indicate almost completely transparent Schottky barriers and efficient ambipolar charge injection into a low band gap one-dimensional semiconductor. Finally, we explore the possibility of applying these ambipolar nanowire FETs in complementary inverters for printed electronics. Electronic supplementary information (ESI) available: Diameter distribution

  2. Fabrication of a liquid-gated enzyme field effect device for sensitive glucose detection.

    PubMed

    Fathollahzadeh, M; Hosseini, M; Haghighi, B; Kolahdouz, M; Fathipour, M

    2016-06-14

    This study presents fabrication of a liquid-gated enzyme field effect device and its implementation as a glucose biosensor. The device consisted of four electrodes on a glass substrate with a channel functionalized by carboxylated multi-walled carbon nanotubes-polyaniline nanocomposite (MWCNTCOOH/PAn) and glucose oxidase. The resistance of functionalized channel increased with increasing the concentration of glucose when an electric field was applied to the liquid gate. The most effective and stable performance was obtained at the applied electric field of 100 mV. The device resistance, R, exhibited a linear relationship with the logarithm of glucose concentration in the range between 0.005 and 500 mM glucose. The detection limit (S/N = 3) for glucose was about 0.5 μM. Large effective area and good conductivity properties of MWCNTCOOH/PAn nanocomposite were the key features of the fabricated sensitive and stable glucose biosensor. PMID:27181649

  3. Cluster mean-field signature of entanglement entropy in bosonic superfluid-insulator transitions

    NASA Astrophysics Data System (ADS)

    Zhang, Li; Qin, Xizhou; Ke, Yongguan; Lee, Chaohong

    2016-08-01

    Entanglement entropy (EE), a fundamental concept in quantum information for characterizing entanglement, has been extensively employed to explore quantum phase transitions (QPTs). Although the conventional single-site mean-field (MF) approach successfully predicts the emergence of QPTs, it fails to include any entanglement. Here, in the framework of a cluster MF treatment, we extract the signature of EE in bosonic superfluid-insulator (SI) transitions. We consider a trimerized Kagomé lattice of interacting bosons, in which each trimer is treated as a cluster, and implement the cluster MF treatment by decoupling all intertrimer hopping. In addition to superfluid and integer insulator phases, we find that fractional insulator phases appear when the tunneling is dominated by the intratrimer part. To quantify the residual bipartite entanglement in a cluster, we calculate the second-order Rényi entropy, which can be experimentally measured by quantum interference of many-body twins. The second-order Rényi entropy itself is continuous everywhere, however, the continuousness of its first-order derivative breaks down at the phase boundary. This means that the bosonic SI transitions can still be efficiently captured by the residual entanglement in our cluster MF treatment. Besides to the bosonic SI transitions, our cluster MF treatment may also be used to capture the signature of EE for other QPTs in quantum superlattice models.

  4. Numerical Computation of Electric Field and Potential Along Silicone Rubber Insulators Under Contaminated and Dry Band Conditions

    NASA Astrophysics Data System (ADS)

    Arshad; Nekahi, A.; McMeekin, S. G.; Farzaneh, M.

    2016-09-01

    Electrical field distribution along the insulator surface is considered one of the important parameters for the performance evaluation of outdoor insulators. In this paper numerical simulations were carried out to investigate the electric field and potential distribution along silicone rubber insulators under various polluted and dry band conditions. Simulations were performed using commercially available simulation package Comsol Multiphysics based on the finite element method. Various pollution severity levels were simulated by changing the conductivity of pollution layer. Dry bands of 2 cm width were inserted at the high voltage end, ground end, middle part, shed, sheath, and at the junction of shed and sheath to investigate the effect of dry band location and width on electric field and potential distribution. Partial pollution conditions were simulated by applying pollution layer on the top and bottom surface respectively. It was observed from the simulation results that electric field intensity was higher at the metal electrode ends and at the junction of dry bands. Simulation results showed that potential distribution is nonlinear in the case of clean and partially polluted insulator and linear for uniform pollution layer. Dry band formation effect both potential and electric field distribution. Power dissipated along the insulator surface and the resultant heat generation was also studied. The results of this study could be useful in the selection of polymeric insulators for contaminated environments.

  5. G4-FETs as Universal and Programmable Logic Gates

    NASA Technical Reports Server (NTRS)

    Johnson, Travis; Fijany, Amir; Mojarradi, Mohammad; Vatan, Farrokh; Toomarian, Nikzad; Kolawa, Elizabeth; Cristoloveanu, Sorin; Blalock, Benjamin

    2007-01-01

    An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

  6. Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

    SciTech Connect

    Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K.

    2014-02-24

    We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

  7. Fabrication of aligned nanofibers by electric-field-controlled electrospinning: insulating-block method.

    PubMed

    Hwang, Wontae; Pang, Changhyun; Chae, Heeyeop

    2016-10-28

    Aligned nanofiber arrays and mats were fabricated with an electrospinning process by manipulating the electric field. The electric field was modified by insulating blocks (IBs) that were installed between the nozzle and the substrate as guiding elements to control the trajectory of the electrospinning jet flow. Simulation results showed that the electric field was deformed near the IBs, resulting in confinement of the electrospinning jet between the blocks. The balance of the electric field in the vertical direction and the repulsive force by space charges in the confined electrified jet stream was attributed to the aligned motion of the jet. Aligned arrays of 200 nm thick polyethylene oxide nanofibers were obtained, exhibiting wave-shaped and cross patterns as well as rectilinear patterns. In addition, 40 μm thick quasi-aligned carbon-nanofiber mats with anisotropic electrical property were also attained by this method. PMID:27651316

  8. Fabrication of aligned nanofibers by electric-field-controlled electrospinning: insulating-block method.

    PubMed

    Hwang, Wontae; Pang, Changhyun; Chae, Heeyeop

    2016-10-28

    Aligned nanofiber arrays and mats were fabricated with an electrospinning process by manipulating the electric field. The electric field was modified by insulating blocks (IBs) that were installed between the nozzle and the substrate as guiding elements to control the trajectory of the electrospinning jet flow. Simulation results showed that the electric field was deformed near the IBs, resulting in confinement of the electrospinning jet between the blocks. The balance of the electric field in the vertical direction and the repulsive force by space charges in the confined electrified jet stream was attributed to the aligned motion of the jet. Aligned arrays of 200 nm thick polyethylene oxide nanofibers were obtained, exhibiting wave-shaped and cross patterns as well as rectilinear patterns. In addition, 40 μm thick quasi-aligned carbon-nanofiber mats with anisotropic electrical property were also attained by this method.

  9. Fabrication of aligned nanofibers by electric-field-controlled electrospinning: insulating-block method

    NASA Astrophysics Data System (ADS)

    Hwang, Wontae; Pang, Changhyun; Chae, Heeyeop

    2016-10-01

    Aligned nanofiber arrays and mats were fabricated with an electrospinning process by manipulating the electric field. The electric field was modified by insulating blocks (IBs) that were installed between the nozzle and the substrate as guiding elements to control the trajectory of the electrospinning jet flow. Simulation results showed that the electric field was deformed near the IBs, resulting in confinement of the electrospinning jet between the blocks. The balance of the electric field in the vertical direction and the repulsive force by space charges in the confined electrified jet stream was attributed to the aligned motion of the jet. Aligned arrays of 200 nm thick polyethylene oxide nanofibers were obtained, exhibiting wave-shaped and cross patterns as well as rectilinear patterns. In addition, 40 μm thick quasi-aligned carbon-nanofiber mats with anisotropic electrical property were also attained by this method.

  10. Field Evaluation of Highly Insulating Windows in the Lab Homes: Winter Experiment

    SciTech Connect

    Parker, Graham B.; Widder, Sarah H.; Bauman, Nathan N.

    2012-06-01

    This field evaluation of highly insulating windows was undertaken in a matched pair of 'Lab Homes' located on the Pacific Northwest National Laboratory (PNNL) campus during the 2012 winter heating season. Improving the insulation and solar heat gain characteristics of a home's windows has the potential to significantly improve the home's building envelope and overall thermal performance by reducing heat loss (in the winter), and cooling loss and solar heat gain (in the summer) through the windows. A high quality installation and/or window retrofit will also minimize or reduce air leakage through the window cavity and thus also contribute to reduced heat loss in the winter and cooling loss in the summer. These improvements all contribute to decreasing overall annual home energy use. Occupant comfort (non-quantifiable) can also be increased by minimizing or eliminating the cold 'draft' (temperature) many residents experience at or near window surfaces that are at a noticeably lower temperature than the room air temperature. Lastly, although not measured in this experiment, highly insulating windows (triple-pane in this experiment) also have the potential to significantly reduce the noise transmittance through windows compared to standard double-pane windows. The metered data taken in the Lab Homes and data analysis presented here represent 70 days of data taken during the 2012 heating season. As such, the savings from highly insulating windows in the experimental home (Lab Home B) compared to the standard double-pane clear glass windows in the baseline home (Lab Home A) are only a portion of the energy savings expected from a year-long experiment that would include a cooling season. The cooling season experiment will take place in the homes in the summer of 2012, and results of that experiment will be reported in a subsequent report available to all stakeholders.

  11. Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ahn, Shihyun; Ren, Fan; Kim, Janghyuk; Oh, Sooyeoun; Kim, Jihyun; Mastro, Michael A.; Pearton, S. J.

    2016-08-01

    Field effect transistors (FETs) using SiO2 and Al2O3 as the gate oxides for the back and front sides, respectively, were fabricated on exfoliated two-dimensional (2D) β-Ga2O3 nano-belts transferred to a SiO2/Si substrate. The mechanical exfoliation and transfer process produced nano-belts with smooth surface morphologies and a uniform low defect density interface with the SiO2/Si substrate. The depletion mode nanobelt transistors exhibited better channel modulation with both front and back gates operational compared to either front or back-gating alone. The maximum transconductance was ˜4.4 mS mm-1 with front and back-gating and ˜3.7 mS mm-1 with front-gating only and a maximum drain source current density of 60 mA mm-1 was achieved at a drain-source voltage of 10 V. The FETs had on/off ratios of ˜105 at 25 °C with gate-source current densities of ˜2 × 10-3 mA mm-1 at a gate voltage of -30 V. The device characteristics were stable over more than a month for storage in air ambient and the results show the potential of 2D β-Ga2O3 for power nanoelectronics.

  12. Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors

    NASA Astrophysics Data System (ADS)

    Banal, Ryan G.; Imura, Masataka; Liu, Jiangwei; Koide, Yasuo

    2016-09-01

    Significant improvements in electrical properties are achieved from AlN/Al2O3 stack gate H-terminated diamond metal-insulator-semiconductor field-effect transistors (MISFETs) upon improving the structural quality of an AlN insulating layer. The 5-nm-thick Al2O3 layer and 175-nm-thick AlN film are successively deposited by atomic layer deposition and sputter deposition techniques, respectively, on a (100) H-diamond epitaxial layer substrate. The AlN layer exhibits a poly-crystalline structure with the hexagonal wurtzite phase. The crystallite growth proceeds along the c-axis direction and perpendicular to the substrate surface, resulting in a columnar grain structure with an average grain size of around ˜40 nm. The MIS diode fabricated provides a leak current density as low as ˜10-5 A/cm2 at gate voltage bias in the range of -8 V and +4 V. The MISFET fabricated shows normally off enhancement mode transfer characteristic. The drain-source current maximum, threshold voltage, and maximum extrinsic conductance of the FET with 4 μm gate length are -8.89 mA/mm, -0.22 V, and 6.83 mS/mm, respectively.

  13. Mobility overestimation due to gated contacts in organic field-effect transistors.

    PubMed

    Bittle, Emily G; Basham, James I; Jackson, Thomas N; Jurchescu, Oana D; Gundlach, David J

    2016-01-01

    Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm(2) V(-1) s(-1)), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current-voltage characterization are overestimated by one order of magnitude or more.

  14. Fluorinated polyimide gate dielectrics for the advancing the electrical stability of organic field-effect transistors.

    PubMed

    Baek, Yonghwa; Lim, Sooman; Yoo, Eun Joo; Kim, Lae Ho; Kim, Haekyoung; Lee, Seung Woo; Kim, Se Hyun; Park, Chan Eon

    2014-09-10

    Organic field-effect transistors (OFETs) that operated with good electrical stability were prepared by synthesizing fluorinated polyimide (PI) gate dielectrics based on 6FDA-PDA-PDA PI and 6FDA-CF3Bz-PDA PI. 6FDA-PDA-PDA PI and 6FDA-CF3Bz-PDA PI contain 6 and 18 fluorine atoms per repeat unit, respectively. These fluorinated polymers provided smooth surface topographies and surface energies that decreased as the number of fluorine atoms in the polymer backbone increased. These properties led to a better crystalline morphology in the semiconductor film grown over their surfaces. The number of fluorine atoms in the PI backbone increased, the field-effect mobility improved, and the threshold voltage shifted toward positive values (from -0.38 to +2.21 V) in the OFETs with pentacene and triethylsilylethynyl anthradithiophene. In addition, the highly fluorinated polyimide dielectric showed negligible hysteresis and a notable gate bias stability under both a N2 environment and ambient air.

  15. Analytical solutions for flow fields near drain-and-gate reactive barriers.

    PubMed

    Klammler, Harald; Hatfield, Kirk; Kacimov, Anvar

    2010-01-01

    Permeable reactive barriers (PRBs) are a popular technology for passive contaminant remediation in aquifers through installation of reactive materials in the pathway of a plume. Of fundamental importance are the degree of remediation inside the reactor (residence time) and the portion of groundwater intercepted by a PRB (capture width). Based on a two-dimensional conformal mapping approach (previously used in related work), the latter is studied in the present work for drain-and-gate (DG) PRBs, which may possess a collector and a distributor drain ("full" configuration) or a collector drain only ("simple" configuration). Inherent assumptions are a homogeneous unbounded aquifer with a uniform far field, in which highly permeable drains establish constant head boundaries. Solutions for aquifer flow fields in terms of the complex potential are derived, illustrated, and analyzed for doubly symmetric DG configurations and arbitrary reactor hydraulic resistance as well as ambient groundwater flow direction. A series of practitioner-friendly charts for capture width is given to assist in PRB design and optimization without requiring complex mathematics. DG PRBs are identified as more susceptible to flow divergence around the reactor than configurations using impermeable side structures (e.g., funnel-and-gate), and deployment of impermeable walls on drains is seen to mitigate this problem under certain circumstances.

  16. Mobility overestimation due to gated contacts in organic field-effect transistors

    PubMed Central

    Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

    2016-01-01

    Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

  17. Mobility overestimation due to gated contacts in organic field-effect transistors.

    PubMed

    Bittle, Emily G; Basham, James I; Jackson, Thomas N; Jurchescu, Oana D; Gundlach, David J

    2016-01-01

    Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm(2) V(-1) s(-1)), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current-voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

  18. Mobility overestimation due to gated contacts in organic field-effect transistors

    NASA Astrophysics Data System (ADS)

    Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

    2016-03-01

    Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V-1 s-1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current-voltage characterization are overestimated by one order of magnitude or more.

  19. Streamer initiation and propagation in insulating oil in weakly non-uniform fields under impulse conditions

    SciTech Connect

    Badent, R.; Kist, K.; Schwab, A.J.

    1996-12-31

    This paper deals with the investigation of prebreakdown phenomenon in insulating oil in weakly non-uniform fields of rod-plane geometries with gaps up to 100 mm under impulse voltages of both polarities up to 700 kV. As with the point-plane configuration, the rod-plane geometry shows a decrease of the time to breakdown with increasing voltage rate-of-rise. At a specific rate, a significantly shorter breakdown time is observed both for positive and negative polarities. Beyond this discontinuity range breakdown time decreases again but with lower rates.

  20. Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fields.

    PubMed

    Lo, Shun-Tsung; Wang, Yi-Ting; Bohra, G; Comfort, E; Lin, T-Y; Kang, M-G; Strasser, G; Bird, J P; Huang, C F; Lin, Li-Hung; Chen, J C; Liang, C-T

    2012-10-10

    Magneto-transport measurements are performed on two-dimensional GaAs electron systems to probe the quantum Hall (QH) effect at low magnetic fields. Oscillations following the Shubnikov-de Haas (SdH) formula are observed in the transition from the insulator to QH liquid when the observed almost temperature-independent Hall slope indicates insignificant interaction correction. Our study shows that the existence of SdH oscillations in such a transition can be understood based on the non-interacting model.

  1. Transverse energy distribution analysis in a field emission element with an insulator funnel

    NASA Astrophysics Data System (ADS)

    Min, Liu; Xiaobing, Zhang; Wei, Lei; Hongping, Zhao; Baoping, Wang

    2005-06-01

    In a field emission display panel, an insulator funnel, which is called Hop funnel, has been used to separate the cathode and the anode. Secondary electrons generated on top of the insulating surface due to the primary electron bombardment are drawn to the exit hole of the funnel by the electric field. Therefore, the energy distribution of these secondary electrons influences the quality of the FED. In this paper, an experimental instrument has been built to study the energy distribution of the secondary electrons on the anode screen in a field emission display element. Simultaneously, the relevant simulation with different primary conditions has been made. The both numerical simulation and experimental results are compared, and it is found that: (1) The experimental results can be well described by the numerical simulations; (2) the distance between the emitting center and the funnel hole has a dramatic influence to the number of electrons that can leave the hop funnel; (3) the distance between the anode and the funnel does not have a strong influence on the energy distribution; (4) the transverse energy distribution of hop electrons is very low.

  2. Holographic superconductor/insulator transition with logarithmic electromagnetic field in Gauss-Bonnet gravity

    NASA Astrophysics Data System (ADS)

    Jing, Jiliang; Pan, Qiyuan; Chen, Songbai

    2012-10-01

    The behaviors of the holographic superconductors/insulator transition are studied by introducing a charged scalar field coupled with a logarithmic electromagnetic field in both the Einstein-Gauss-Bonnet AdS black hole and soliton. For the Einstein-Gauss-Bonnet AdS black hole, we find that: i) the larger coupling parameter of logarithmic electrodynamic field b makes it easier for the scalar hair to be condensed; ii) the ratio of the gap frequency in conductivity ωg to the critical temperature Tc depends on both b and the Gauss-Bonnet constant α; and iii) the critical exponents are independent of the b and α. For the Einstein-Gauss-Bonnet AdS soliton, we show that the system is the insulator phase when the chemical potential μ is small, but there is a phase transition and the AdS soliton reaches the superconductor (or superfluid) phase when μ is larger than critical chemical potential. A special property should be noted is that the critical chemical potential is not changed by the coupling parameter b but depends on α.

  3. Realization of a quantum gate using gravitational search algorithm by perturbing three-dimensional harmonic oscillator with an electromagnetic field

    NASA Astrophysics Data System (ADS)

    Sharma, Navneet; Rawat, Tarun Kumar; Parthasarathy, Harish; Gautam, Kumar

    2016-06-01

    The aim of this paper is to design a current source obtained as a representation of p information symbols \\{I_k\\} so that the electromagnetic (EM) field generated interacts with a quantum atomic system producing after a fixed duration T a unitary gate U( T) that is as close as possible to a given unitary gate U_g. The design procedure involves calculating the EM field produced by \\{I_k\\} and hence the perturbing Hamiltonian produced by \\{I_k\\} finally resulting in the evolution operator produced by \\{I_k\\} up to cubic order based on the Dyson series expansion. The gate error energy is thus obtained as a cubic polynomial in \\{I_k\\} which is minimized using gravitational search algorithm. The signal to noise ratio (SNR) in the designed gate is higher as compared to that using quadratic Dyson series expansion. The SNR is calculated as the ratio of the Frobenius norm square of the desired gate to that of the desired gate error.

  4. High-performance reconfigurable coincidence counting unit based on a field programmable gate array.

    PubMed

    Park, Byung Kwon; Kim, Yong-Su; Kwon, Osung; Han, Sang-Wook; Moon, Sung

    2015-05-20

    We present a high-performance reconfigurable coincidence counting unit (CCU) using a low-end field programmable gate array (FPGA) and peripheral circuits. Because of the flexibility guaranteed by the FPGA program, we can easily change system parameters, such as internal input delays, coincidence configurations, and the coincidence time window. In spite of a low-cost implementation, the proposed CCU architecture outperforms previous ones in many aspects: it has 8 logic inputs and 4 coincidence outputs that can measure up to eight-fold coincidences. The minimum coincidence time window and the maximum input frequency are 0.47 ns and 163 MHz, respectively. The CCU will be useful in various experimental research areas, including the field of quantum optics and quantum information. PMID:26192507

  5. Quantum logic gates from time-dependent global magnetic field in a system with constant exchange

    SciTech Connect

    Nenashev, A. V. Dvurechenskii, A. V.; Zinovieva, A. F.; Gornov, A. Yu.; Zarodnyuk, T. S.

    2015-03-21

    We propose a method that implements a universal set of one- and two-quantum-bit gates for quantum computation in a system of coupled electron pairs with constant non-diagonal exchange interaction. In our proposal, suppression of the exchange interaction is performed by the continual repetition of single-spin rotations. A small g-factor difference between the electrons allows for addressing qubits and avoiding strong magnetic field pulses. Numerical experiments were performed to show that, to implement the one- and two-qubit operations, it is sufficient to change the strength of the magnetic field by a few Gauss. This introduces one and then the other electron in a resonance. To determine the evolution of the two-qubit system, we use the algorithms of optimal control theory.

  6. Touch sensors based on planar liquid crystal-gated-organic field-effect transistors

    SciTech Connect

    Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Youngkyoo; Kim, Hwajeong; Lee, Joon-Hyung; Park, Soo-Young; Kang, Inn-Kyu

    2014-09-15

    We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 μm thick LC layer (4-cyano-4{sup ′}-pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 μl/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm{sup 2}/Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V{sub D}) and gate (V{sub G}) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V{sub D} and V{sub G}. The best voltage combination was V{sub D} = −0.2 V and V{sub G} = −1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors.

  7. Electrically tuned magnetic order and magnetoresistance in a topological insulator.

    PubMed

    Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu

    2014-09-15

    The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.

  8. Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

    SciTech Connect

    Akhavan, N. D. Jolley, G.; Umana-Membreno, G. A.; Antoszewski, J.; Faraone, L.

    2014-08-28

    Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10 nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10 nm regime.

  9. High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics

    PubMed Central

    Shen, Li-Fan; Yip, SenPo; Yang, Zai-xing; Fang, Ming; Hung, TakFu; Pun, Edwin Y.B.; Ho, Johnny C.

    2015-01-01

    Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire surface/interface traps between the nanowire channel and gate dielectric as well as the complicated device fabrication scheme. Here, we report the development of high-performance wrap-gated InGaAs NWFETs using conventional sputtered Al2O3 layers as gate dielectrics, instead of the typically employed atomic layer deposited counterparts. Importantly, the surface chemical passivation of NW channels performed right before the dielectric deposition is found to significantly alleviate plasma induced defect traps on the NW channel. Utilizing this passivation, the wrap-gated device exhibits superior electrical performances: a high ION/IOFF ratio of ~2 × 106, an extremely low sub-threshold slope of 80 mV/decade and a peak field-effect electron mobility of ~1600 cm2/(Vs) at VDS = 0.1 V at room temperature, in which these values are even better than the ones of state-of-the-art NWFETs reported so far. By combining sputtering and pre-deposition chemical passivation to achieve high-quality gate dielectrics for wrap-gated NWFETs, the superior gate coupling and electrical performances have been achieved, confirming the effectiveness of our hybrid approach for future advanced electronic devices. PMID:26607169

  10. The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurement

    NASA Astrophysics Data System (ADS)

    Hsieh, E. R.; Chung, Steve S.

    2015-12-01

    The evolution of gate-current leakage path has been observed and depicted by RTN signals on metal-oxide-silicon field effect transistor with high-k gate dielectric. An experimental method based on gate-current random telegraph noise (Ig-RTN) technique was developed to observe the formation of gate-leakage path for the device under certain electrical stress, such as Bias Temperature Instability. The results show that the evolution of gate-current path consists of three stages. In the beginning, only direct-tunnelling gate current and discrete traps inducing Ig-RTN are observed; in the middle stage, interaction between traps and the percolation paths presents a multi-level gate-current variation, and finally two different patterns of the hard or soft breakdown path can be identified. These observations provide us a better understanding of the gate-leakage and its impact on the device reliability.

  11. Human aquaporin 4 gating dynamics in dc and ac electric fields: A molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Garate, J.-A.; English, Niall J.; MacElroy, J. M. D.

    2011-02-01

    Water self-diffusion within human aquaporin 4 has been studied using molecular dynamics (MD) simulations in the absence and presence of external ac and dc electric fields. The computed diffusive (pd) and osmotic (pf) permeabilities under zero-field conditions are (0.718 ± 0.24) × 10-14 cm3 s-1 and (2.94 ± 0.47) × 10-14 cm3 s-1, respectively; our pf agrees with the experimental value of (1.50 ± 0.6) × 10-14 cm3 s-1. A gating mechanism has been proposed in which side-chain dynamics of residue H201, located in the selectivity filter, play an essential role. In addition, for nonequilibrium MD in external fields, it was found that water dipole orientation within the constriction region of the channel is affected by electric fields (e-fields) and that this governs the permeability. It was also found that the rate of side-chain flipping motion of residue H201 is increased in the presence of e-fields, which influences water conductivity further.

  12. Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

    SciTech Connect

    Pud, S.; Li, J.; Offenhäusser, A.; Vitusevich, S. A.; Gasparyan, F.; Petrychuk, M.

    2014-06-21

    Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO{sub 2} and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

  13. α,ω-dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors

    NASA Astrophysics Data System (ADS)

    Schamoni, Hannah; Noever, Simon; Nickel, Bert; Stutzmann, Martin; Garrido, Jose A.

    2016-02-01

    While organic semiconductors are being widely investigated for chemical and biochemical sensing applications, major drawbacks such as the poor device stability and low charge carrier mobility in aqueous electrolytes have not yet been solved to complete satisfaction. In this work, solution-gated organic field-effect transistors (SGOFETs) based on the molecule α,ω-dihexyl-sexithiophene (DH6T) are presented as promising platforms for in-electrolyte sensing. Thin films of DH6T were investigated with regard to the influence of the substrate temperature during deposition on the grain size and structural order. The performance of SGOFETs can be improved by choosing suitable growth parameters that lead to a two-dimensional film morphology and a high degree of structural order. Furthermore, the capability of the SGOFETs to detect changes in the pH or ionic strength of the gate electrolyte is demonstrated and simulated. Finally, excellent transistor stability is confirmed by continuously operating the device over a period of several days, which is a consequence of the low threshold voltage of DH6T-based SGOFETs. Altogether, our results demonstrate the feasibility of high performance and highly stable organic semiconductor devices for chemical or biochemical applications.

  14. Flexible terahertz modulator based on coplanar-gate graphene field-effect transistor structure.

    PubMed

    Liu, Jingbo; Li, Pingjian; Chen, Yuanfu; Song, Xinbo; Mao, Qi; Wu, Yang; Qi, Fei; Zheng, Binjie; He, Jiarui; Yang, Hyunsoo; Wen, Qiye; Zhang, Wanli

    2016-02-15

    The terahertz (THz) modulators, as an essential component of the THz system, have been developed by many efforts until now. However, the development of flexible THz modulators is hindered due to the lack of flexible THz modulating materials. Herein, for the first time to the best of our knowledge, we demonstrated the feasibility of flexible THz modulators based on the coplanar-gate field-effect transistor (FET) structure of ion-gel/graphene/polyethylene terephthalate. The THz transmittance through this THz graphene modulator can be well controlled with a modulation depth up to 22% by tuning the carrier concentration of graphene via electrical gating. Furthermore, because of the integration of high flexibilities of graphene, ion-gel, and polyethylene terephthalate (PET), the proposed THz graphene modulator shows superior flexible performance, where the modulation properties can be maintained almost unchanged, not only under bending deformations, but also before and after bending 1000 times. In addition, due to the unique structure of ion-gel/graphene/PET, the flexible THz graphene modulator has a low insertion loss (1.2 dB). Therefore, this Letter is expected to be beneficial for the potential applications, ranging from the traditional compact THz system to a new flexible THz technology. PMID:26872196

  15. Crystal field effect induced topological crystalline insulators in monolayer IV-VI semiconductors.

    PubMed

    Liu, Junwei; Qian, Xiaofeng; Fu, Liang

    2015-04-01

    Two-dimensional (2D) topological crystalline insulators (TCIs) were recently predicted in thin films of the SnTe class of IV-VI semiconductors, which can host metallic edge states protected by mirror symmetry. As thickness decreases, quantum confinement effect will increase and surpass the inverted gap below a critical thickness, turning TCIs into normal insulators. Surprisingly, based on first-principles calculations, here we demonstrate that (001) monolayers of rocksalt IV-VI semiconductors XY (X = Ge, Sn, Pb and Y = S, Se, Te) are 2D TCIs with the fundamental band gap as large as 260 meV in monolayer PbTe. This unexpected nontrivial topological phase stems from the strong crystal field effect in the monolayer, which lifts the degeneracy between p(x,y) and p(z) orbitals and leads to band inversion between cation pz and anion px,y orbitals. This crystal field effect induced topological phase offers a new strategy to find and design other atomically thin 2D topological materials.

  16. Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects.

    PubMed

    Syrlybekov, Askar; Wu, Han-Chun; Mauit, Ozhet; Wu, Ye-Cun; Maguire, Pierce; Khalid, Abbas; Coileáin, Cormac Ó; Farrell, Leo; Heng, Cheng-Lin; Abid, Mohamed; Liu, Huajun; Yang, Li; Zhang, Hong-Zhou; Shvets, Igor V

    2015-09-01

    Recently, significant attention has been paid to the resistance switching (RS) behaviour in Fe3O4 and it was explained through the analogy of the electrically driven metal-insulator transition based on the quantum tunneling theory. Here, we propose a method to experimentally support this explanation and provide a way to tune the critical switching parameter by introducing self-aligned localized impurities through the growth of Fe3O4 thin films on stepped SrTiO3 substrates. Anisotropic behavior in the RS was observed, where a lower switching voltage in the range of 10(4) V cm(-1) is required to switch Fe3O4 from a high conducting state to a low conducting state when the electrical field is applied along the steps. The anisotropic RS behavior is attributed to a high density array of anti-phase boundaries (APBs) formed at the step edges and thus are aligned along the same direction in the film which act as a train of hotspot forming conduits for resonant tunneling. Our experimental studies open an interesting window to tune the electrical-field-driven metal-insulator transition in strongly correlated systems.

  17. Metal-insulator-transition in SrTiO3 induced by argon bombardment combined with field effect

    SciTech Connect

    Xu, Jie; Zhu, Zhengyong; Zhao, Hengliang; Luo, Zhijiong

    2014-12-15

    By fabricating the Field-Effect-Transistors on argon bombardment SrTiO3 substrates, not only we have achieved one of the best mobility for Field-Effect-Transistors fabricated on SrTiO3, but also realized strong field induced Metal-Insulator-Transition. The critical sheet resistance for the Metal-Insulator-Transition is only 1/7 of the value obtained in the former experiments, indicating a different mechanism. Further study shows that the Metal-Insulator-Transition can be attributed to the oxygen vacancies formed after the bombardment becoming the electron donor under the electric field modulation, increasing SrTiO3 surface electron density and transforming the substrate into metallic state.

  18. Controlling chaos with magnetic field in semi-insulating GaAs

    SciTech Connect

    Oliveira, A. G. de; Ribeiro, G. M.; Moreira, M. V. B.; Gonzalez, J. C.; Silva, R. L. da; Rubinger, R. M.

    2007-10-15

    Chaos control has stimulated a large amount of work. We have studied the effect of an external parallel magnetic field on the low-frequency current oscillations observed on a molecular beam epitaxy GaAs sample grown at 265 deg. C, and we have shown that it can be efficiently used for chaos control. The study of the magnetoresistance indicates that the effect of the magnetic field on the charges of the hopping conduction mechanism induces changes in the low-frequency oscillations. Due to this, we have used the magnetic field to control chaos assessed through direct observation low-frequency oscillations, their attractors, and bifurcation diagrams. We also found that the magnetic field interferes indirectly with the Coulombian interaction between the free charges in the conduction band and the hopping carriers, as well as with the recombination mechanism of field enhanced trapping. Controlling the low-frequency oscillations in semi-insulating GaAs by means of an external magnetic field permits probing the interaction of the slow hopping carriers and the fast free carriers in the electric-field domains.

  19. First-Principle Perturbative Computation of Phonon Properties of Insulators in Finite Electric Fields

    NASA Astrophysics Data System (ADS)

    Wang, Xinjie

    2005-03-01

    The methods of density-functional perturbation theory have been shown to provide a powerful tool for realistic calculations of lattice-vibrational, dielectric, elastic, and other response properties of crystals.ootnotetextS. Baroni et al., Rev. Mod. Phys. 73, 515 (2001). Recently, a total-energy method for insulators in nonzero electric fields was proposed.ootnotetextI. Souza, J. 'Iñiguez, and D. Vanderbilt, Phys. Rev. Lett. 89, 117602 (2002). However, the perturbative computation of phonon properties under a dc bias field has not previously been addressed. Here, we start from a variational total-energy functional with a field coupling term that represents the effect of the electric field on the crystal. The linear response of the field-polarized Bloch functions is obtained by minimizing the second-order derivative of the total-energy functional. Due to the presence of the electric field, the field-polarized Bloch functions at each k-point in the Brillouin zone are weakly coupled to those at the neighboring k-points. We implement the method in the ABINIT code and perform illustrative calculations of the phonon frequencies for III-V semicondutors.

  20. Gate Modulation of Threshold Voltage Instability in Multilayer InSe Field Effect Transistors.

    PubMed

    Feng, Wei; Zheng, Wei; Chen, XiaoShuang; Liu, Guangbo; Hu, PingAn

    2015-12-01

    We report a modulation of threshold voltage instability of back-gated multilayer InSe FETs by gate bias stress. The performance stability of multilayer InSe FETs is affected by gate bias polar, gate bias stress time and gate bias sweep rate under ambient conditions. The on-current increases and threshold voltage shifts to negative gate bias stress direction with negative bias stress applied, which are opposite to that of positive bias stress. The intensity of gate bias stress effect is influenced by applied gate bias time and the sweep rate of gate bias stress. The behavior can be explained by the surface charge trapping model due to the adsorbing/desorbing oxygen and/or water molecules on the InSe surface. This study offers an opportunity to understand gate bias stress modulation of performance instability of back-gated multilayer InSe FETs and provides a clue for designing desirable InSe nanoelectronic and optoelectronic devices.

  1. Simulation of Electric Field in Semi Insulating Au/CdTe/Au Detector under Flux

    SciTech Connect

    Franc, J.; James, R.; Grill, R.; Kubat, J.; Belas, E.; Hoschl, P.; Moravec, P.; Praus, P.

    2009-08-02

    We report our simulations on the profile of the electric field in semi insulating CdTe and CdZnTe with Au contacts under radiation flux. The type of the space charge and electric field distribution in the Au/CdTe/Au structure is at high fluxes result of a combined influence of charge formed due to band bending at the electrodes and from photo generated carriers, which are trapped at deep levels. Simultaneous solution of drift-diffusion and Poisson equations is used for the calculation. We show, that the space charge originating from trapped photo-carriers starts to dominate at fluxes 10{sup 15}-10{sup 16}cm{sup -2}s{sup -1}, when the influence of contacts starts to be negligible.

  2. Chiral Spin Liquids in Triangular-Lattice SU (N ) Fermionic Mott Insulators with Artificial Gauge Fields

    NASA Astrophysics Data System (ADS)

    Nataf, Pierre; Lajkó, Miklós; Wietek, Alexander; Penc, Karlo; Mila, Frédéric; Läuchli, Andreas M.

    2016-10-01

    We show that, in the presence of a π /2 artificial gauge field per plaquette, Mott insulating phases of ultracold fermions with SU (N ) symmetry and one particle per site generically possess an extended chiral phase with intrinsic topological order characterized by an approximate ground space of N low-lying singlets for periodic boundary conditions, and by chiral edge states described by the SU(N ) 1 Wess-Zumino-Novikov-Witten conformal field theory for open boundary conditions. This has been achieved by extensive exact diagonalizations for N between 3 and 9, and by a parton construction based on a set of N Gutzwiller projected fermionic wave functions with flux π /N per triangular plaquette. Experimental implications are briefly discussed.

  3. Magnetic-field-modulated resonant tunneling in ferromagnetic-insulator-nonmagnetic junctions.

    PubMed

    Song, Yang; Dery, Hanan

    2014-07-25

    We present a theory for resonance-tunneling magnetoresistance (MR) in ferromagnetic-insulator-nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather than spin accumulation in the nonmagnetic channel corresponds to the electrically detected signal. We quantify the dependence of the tunnel current on the magnetic field by quantum rate equations derived from the Anderson impurity model, with the important addition of impurity spin interactions. Considering the on-site Coulomb correlation, the MR effect is caused by competition between the field, spin interactions, and coupling to the magnetic lead. By extending the theory, we present a basis for operation of novel nanometer-size memories. PMID:25105652

  4. Electron beam collimation with a 40 000 tip metallic double-gate field emitter array and in-situ control of nanotip sharpness distribution

    SciTech Connect

    Helfenstein, P.; Guzenko, V. A.; Tsujino, S.; Fink, H.-W.

    2013-01-28

    The generation of highly collimated electron beams from a double-gate field emitter array with 40000 metallic tips and large collimation gate apertures is reported. Field emission beam measurements demonstrated the reduction of the beam envelope down to the array size by applying a negative potential to the on-chip gate electrode for the collimation of individual field emission beamlets. Owing to the optimized gate structure, the concomitant decrease of the emission current was minimal, leading to a net enhancement of the current density. Furthermore, a noble gas conditioning process was successfully applied to the double-gate device to improve the beam uniformity in-situ with orders of magnitude increase of the active emission area. The results show that the proposed double-gate field emission cathodes are promising for high current and high brightness electron beam applications such as free-electron lasers and THz power devices.

  5. Theoretical transducer properties of piezoelectric insulator FET transducers

    NASA Technical Reports Server (NTRS)

    Greeneich, E. W.; Muller, R. S.

    1975-01-01

    An oriented piezoelectric film incorporated in the insulator region of a silicon insulated-gate field-effect transistor (FET) results in a sensitive high-frequency strain transducer. Theory governing the transducer properties of the piezoelectric insulator FET transducer is presented. Equations are developed which relate the drain current of the device to induced polarizations of the piezoelectric layer. The highest frequency of surface strains to which the FET transducer can respond is determined by the FET frequency response - ultimately by the channel transit time. This frequency can extend to the GHz range. The low-frequency response to applied strain is determined by the dielectric relaxation frequency of the piezoelectric layer.

  6. Analytic modeling of a depletion-mode cylindrical surrounding-gate nanowire field-effect transistor.

    PubMed

    Yu, Yun Seop; Park, Hyung-Kun

    2012-07-01

    A compact model for depletion-mode p-type cylindrical surrounding-gate nanowire field-effect transistors (SGNWFETs) is proposed. The SGNWFET model consists of two back-to-back Schottky diodes for the metal-semiconductor (MS) contacts and the intrinsic SGNWFET. Based on the electrostatic method, the intrinsic SGNWFET model was derived from current conduction mechanisms attributed to bulk charges through the center neutral region, in addition to accumulation charges through the surface accumulation region. The authors' previously developed Schottky diode model was used for the M-S contacts. The new model was applied to an advanced design system (ADS), whereby the intrinsic part of the SGNWFET and the Schottky diode were developed using the Verilog-A language. The results of the simulation of the newly developed SGNWFET model reproduced the experiment results considerably well.

  7. Flux-gate magnetic field sensor based on yttrium iron garnet films for magnetocardiography investigations

    NASA Astrophysics Data System (ADS)

    Vetoshko, P. M.; Gusev, N. A.; Chepurnova, D. A.; Samoilova, E. V.; Syvorotka, I. I.; Syvorotka, I. M.; Zvezdin, A. K.; Korotaeva, A. A.; Belotelov, V. I.

    2016-08-01

    A new type of f lux-gate vector magnetometer based on epitaxial yttrium iron garnet films has been developed and constructed for magnetocardiography (MCG) investigations. The magnetic field sensor can operate at room temperature and measure MCG signals at a distance of about 1 mm from the thoracic cage. The high sensitivity of the sensor, better than 100 fT/Hz1/2, is demonstrated by the results of MCG measurements on rats. The main MCG pattern details and R-peak on a level of 10 pT are observed without temporal averaging, which allows heart rate anomalies to be studied. The proposed magnetic sensors can be effectively used in MCG investigations.

  8. Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistor

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    The threshold voltages of a carbon-nanotube (CNT) field-effect transistor (FET) are studied. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, and this makes the device characteristics quite unique. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and inversion and accumulation threshold voltages (V(sub Ti), and V(sub Ta)) are derived. V(sub Ti) of the CNTFETs has a much stronger doping dependence than that of the metal-oxide- semiconductor FETs, while V(sub Ta) of both devices depends weakly on doping with the same functional form.

  9. Calibration of a gated flat field spectrometer as a function of x-ray intensity

    SciTech Connect

    Xiong, Gang; Yang, Guohong; Li, Hang; Zhang, Jiyan Zhao, Yang; Hu, Zhimin; Wei, Minxi; Qing, Bo; Yang, Jiamin; Liu, Shenye; Jiang, Shaoen

    2014-04-15

    We present an experimental determination of the response of a gated flat-field spectrometer at the Shenguang-II laser facility. X-rays were emitted from a target that was heated by laser beams and then were divided into different intensities with a step aluminum filter and collected by a spectrometer. The transmission of the filter was calibrated using the Beijing Synchrotron Radiation Facility. The response characteristics of the spectrometer were determined by comparing the counts recorded by the spectrometer with the relative intensities of the x-rays transmitted through the step aluminum filter. The response characteristics were used to correct the transmission from two shots of an opacity experiment using the same samples. The transmissions from the two shots are consistent with corrections, but discrepant without corrections.

  10. Field Programmable Gate Array for Implementation of Redundant Advanced Digital Feedback Control

    NASA Technical Reports Server (NTRS)

    King, K. D.

    2003-01-01

    The goal of this effort was to develop a digital motor controller using field programmable gate arrays (FPGAs). This is a more rugged approach than a conventional microprocessor digital controller. FPGAs typically have higher radiation (rad) tolerance than both the microprocessor and memory required for a conventional digital controller. Furthermore, FPGAs can typically operate at higher speeds. (While speed is usually not an issue for motor controllers, it can be for other system controllers.) Other than motor power, only a 3.3-V digital power supply was used in the controller; no analog bias supplies were used. Since most of the circuit was implemented in the FPGA, no additional parts were needed other than the power transistors to drive the motor. The benefits that FPGAs provide over conventional designs-lower power and fewer parts-allow for smaller packaging and reduced weight and cost.

  11. Calibration of a gated flat field spectrometer as a function of x-ray intensity

    NASA Astrophysics Data System (ADS)

    Xiong, Gang; Yang, Guohong; Li, Hang; Zhang, Jiyan; Zhao, Yang; Hu, Zhimin; Wei, Minxi; Qing, Bo; Yang, Jiamin; Liu, Shenye; Jiang, Shaoen

    2014-04-01

    We present an experimental determination of the response of a gated flat-field spectrometer at the Shenguang-II laser facility. X-rays were emitted from a target that was heated by laser beams and then were divided into different intensities with a step aluminum filter and collected by a spectrometer. The transmission of the filter was calibrated using the Beijing Synchrotron Radiation Facility. The response characteristics of the spectrometer were determined by comparing the counts recorded by the spectrometer with the relative intensities of the x-rays transmitted through the step aluminum filter. The response characteristics were used to correct the transmission from two shots of an opacity experiment using the same samples. The transmissions from the two shots are consistent with corrections, but discrepant without corrections.

  12. Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

    SciTech Connect

    Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin E-mail: chilf@suda.edu.cn Chi, Li-Feng E-mail: chilf@suda.edu.cn Wang, Sui-Dong E-mail: chilf@suda.edu.cn

    2015-03-23

    Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

  13. Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

    SciTech Connect

    Vostokov, N. V. Shashkin, V. I.

    2015-11-28

    We consider the problem of non-resonant detection of terahertz signals in a short gate length field-effect transistor having a two-dimensional electron channel with zero external bias between the source and the drain. The channel resistance, gate-channel capacitance, and quadratic nonlinearity parameter of the transistor during detection as a function of the gate bias voltage are studied. Characteristics of detection of the transistor connected in an antenna with real impedance are analyzed. The consideration is based on both a simple one-dimensional model of the transistor and allowance for the two-dimensional distribution of the electric field in the transistor structure. The results given by the different models are discussed.

  14. Decoherence control: Universal protection of two-qubit states and two-qubit gates using continuous driving fields

    NASA Astrophysics Data System (ADS)

    Chaudhry, Adam Zaman; Gong, Jiangbin

    2012-01-01

    A field configuration utilizing local static fields and a few continuous-wave driving fields is constructed to achieve universal (but low-order) protection of two-qubit states. That is, two-qubit states can be protected against arbitrary system-environment coupling with control fields if their frequencies are sufficiently large as compared with the cutoff frequency of the environment. Equally important, we show that it is possible to construct driving fields to protect two-qubit entangling gates against decoherence, without assuming any particular form of system-environment coupling. Using a non-Markovian master equation, we further demonstrate the effectiveness of our continuous dynamical decoupling fields in protecting entanglement and the excellent performance of protected two-qubit gates in generating entanglement. The results are complementary to current studies of entanglement protection using universal dynamical decoupling pulse sequences.

  15. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

    PubMed

    Park, Nahee; Kang, Haeyong; Park, Jeongmin; Lee, Yourack; Yun, Yoojoo; Lee, Jeong-Ho; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    2015-11-24

    The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.

  16. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

    PubMed

    Park, Nahee; Kang, Haeyong; Park, Jeongmin; Lee, Yourack; Yun, Yoojoo; Lee, Jeong-Ho; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    2015-11-24

    The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics. PMID:26487348

  17. Fabrication of Gate-Electrode Integrated Carbon-Nanotube Bundle Field Emitters

    NASA Technical Reports Server (NTRS)

    Toda, Risaku; Bronikowski, Michael; Luong, Edward; Manohara, Harish

    2008-01-01

    A continuing effort to develop carbon-nanotube-based field emitters (cold cathodes) as high-current-density electron sources has yielded an optimized device design and a fabrication scheme to implement the design. One major element of the device design is to use a planar array of bundles of carbon nanotubes as the field-emission tips and to optimize the critical dimensions of the array (principally, heights of bundles and distances between them) to obtain high area-averaged current density and high reliability over a long operational lifetime a concept that was discussed in more detail in Arrays of Bundles of Carbon Nanotubes as Field Emitters (NPO-40817), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 58. Another major element of the design is to configure the gate electrodes (anodes used to extract, accelerate, and/or focus electrons) as a ring that overhangs a recess wherein the bundles of nanotubes are located, such that by virtue of the proximity between the ring and the bundles, a relatively low applied potential suffices to generate the large electric field needed for emission of electrons.

  18. Field evaluation of 69-kV outdoor Polysil insulators. Final report

    SciTech Connect

    Richenbacher, A.G.

    1985-03-01

    After three years of exposure to widely varying climates and environments, Polysil (polymer concrete) 69-kV post-type insulators are still performing satisfactorily. In all test situations, Polysil insulators performed as well as - sometimes even surpassed - their porcelain counterparts. They also demonstrated potential for substantially reducing insulator costs.

  19. Gating capacitive field-effect sensors by the charge of nanoparticle/molecule hybrids.

    PubMed

    Poghossian, Arshak; Bäcker, Matthias; Mayer, Dirk; Schöning, Michael J

    2015-01-21

    The semiconductor field-effect platform is a powerful tool for chemical and biological sensing with direct electrical readout. In this work, the field-effect capacitive electrolyte-insulator-semiconductor (EIS) structure - the simplest field-effect (bio-)chemical sensor - modified with citrate-capped gold nanoparticles (AuNPs) has been applied for a label-free electrostatic detection of charged molecules by their intrinsic molecular charge. The EIS sensor detects the charge changes in AuNP/molecule inorganic/organic hybrids induced by the molecular adsorption or binding events. The feasibility of the proposed detection scheme has been exemplarily demonstrated by realizing capacitive EIS sensors consisting of an Al-p-Si-SiO2-silane-AuNP structure for the label-free detection of positively charged cytochrome c and poly-d-lysine molecules as well as for monitoring the layer-by-layer formation of polyelectrolyte multilayers of poly(allylamine hydrochloride)/poly(sodium 4-styrene sulfonate), representing typical model examples of detecting small proteins and macromolecules and the consecutive adsorption of positively/negatively charged polyelectrolytes, respectively. For comparison, EIS sensors without AuNPs have been investigated, too. The adsorption of molecules on the surface of AuNPs has been verified via the X-ray photoelectron spectroscopy method. In addition, a theoretical model of the functioning of the capacitive field-effect EIS sensor functionalized with AuNP/charged-molecule hybrids has been discussed.

  20. Dielectric and insulating properties of an acrylic DEA material at high near-DC electric fields

    NASA Astrophysics Data System (ADS)

    Di Lillo, L.; Schmidt, A.; Bergamini, A.; Ermanni, P.; Mazza, E.

    2011-04-01

    A number of adaptive structure applications call for the generation of intense electric fields (in excess of 70 MV/m). Such intense fields across the thickness of a thin polymer dielectric layer are typically used to exploit the direct electromechanical coupling in the form of a Maxwell stress: (see manuscript) Where V/d is the applied field, ɛ0 is the permittivity of vacuum and ɛ is the relative permittivity of the material. The field that can be applied to the dielectric is limited by the dielectric strength of the material. Below the limit set by the breakdown, the material is generally assumed to have a field independent dielectric constant and to be a perfect insulator, i.e. to have an infinite volume resistivity. While extensive investigations about the mechanical properties of the materials used for electronic Dielectric Elastomer Actuators (DEA) are available from literature, the results of the investigation of the insulating and dielectric properties of these materials, especially under conditions (electric field and frequency) similar to the ones encountered during operation are not available. In the present contribution, we present a method and a set-up for the measurement of the electric properties of thin polymer films, such as the ones used for the fabrication of electronic DEAs, under conditions close to operations. The method and setup where developed to investigate the properties of 'stiff' thin polymer films, such as Polyimide or Polyvinylidenefluoride, used for Electro-Bonded Laminates (EBLs). The properties of the well known VHB 4910 acrylic elastomer are presented to illustrate how the permittivity and the leakage current can be measured as a function of the electric field and the deformation state, using the proposed set-up. The material properties were measured on membranes under different fixed pre-stretch conditions (λ 1, λ2=3, 4, 5), in order to eliminate effects due to the change in sample geometry, using gold sputtered electrodes, 20

  1. Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack

    NASA Astrophysics Data System (ADS)

    Liu, Chien; Chen, Ping-Guang; Xie, Meng-Jie; Liu, Shao-Nong; Lee, Jun-Wei; Huang, Shao-Jia; Liu, Sally; Chen, Yu-Sheng; Lee, Heng-Yuan; Liao, Ming-Han; Chen, Pang-Shiu; Lee, Min-Hung

    2016-04-01

    The concept of ferroelectric (FE) negative capacitance (NC) may be a turning point in overcoming the physical limitations imposed by the Boltzmann tyranny to realize next-generation state-of-the-art devices. Both the body factor (m-factor) and the transport mechanism (n-factor) are simultaneously improved by integrating an NC with a tunnel FET (TFET). The modeling approach is discussed in this study as well as the NC physics. By optimizing the thicknesses of FE, semiconductor, and interfacial layers, the capacitance of the FE layers is modulated to match that of a MOS resulting in the smallest subthreshold swing that is also hysteresis-free. An ultrathin-body double gate tunnel FET (UTB-DG-TFET) exhibits a steep slope (a subthreshold swing below 10 mV/dec over more than 4 orders of magnitude) for low-power applications (<0.2 V switching voltage) to realize next-generation state-of-the-art devices.

  2. Misalignment-free signal propagation in nanomagnet arrays and logic gates with 45°-clocking field

    SciTech Connect

    Li, Zheng; Kwon, Byung Seok; Krishnan, Kannan M.

    2014-05-07

    A key obstacle for the application of Magnetic Quantum-dot Cellular Automata (MQCA) is the misalignment of clocking field, which results in low stability for both signal propagations within nanomagnet array and logic operation in majority gates. Here, we demonstrate that a reversal clocking field applied at 45° off the hard axis, with progressively reduced amplitude, applied to a shape-tuned nanomagnet array fabricated by e-beam lithography, helps intrinsically eliminate the misalignment sensitivity of the elements and results in correct signal propagation. Further, least reversal steps and reduced field amplitude was required owing to the 45°-clocking field. This clocking field was also tested for majority gates (OR function) and characterized by Magnetic Force Microscopy demonstrating correct output. This novel design provides high stability for signal propagation and logic operation of MQCA and potentially paves way for its application.

  3. SUPERGLASS. Engineering field tests - Phase 3. Production, market planning, and product evaluation for a high-thermal-performance insulating glass design utilizing HEAT MIRROR transparent insulation. Final report

    SciTech Connect

    Tilford, C L

    1982-11-01

    HEAT MIRROR transparent window insulation consists of a clear polyester film two mils (.002'') thick with a thin, clear low-emissivity (.15) coating deposited on one side by state-of-the-art vacuum deposition processes. This neutral-colored invisible coating reflects long-wave infrared energy (heat). When mounted by being stretched with a 1/2'' air-gap on each side of the film, the resulting unit reduces heat loss by 60% compared to dual insulating glass. Southwall Corporation produces HEAT MIRROR transparent insulation and markets it to manufacturers of sealed insulating glass (I.G.) units and window and building manufacturers who make their own I.G. These companies build and sell the SUPERGLASS sealed glazing units. Units made and installed in buildings by six customers were visited. These units were located in many geographic regions, including the Pacific Northwest, Rocky Mountains, New England, Southeast, and West Coast. As much as could be obtained of their history was recorded, as was their current condition and performance. These units had been in place from two weeks to over a year. All of the units were performing thermally very well, as measured by taking temperature profiles through them and through adjacent conventional I.G. units. Some units had minor visual defects (attributed to I.G. assembly techniques) which are discussed in detail. Overall occupant acceptance was enthusiastically positive. In addition to saving energy, without compromise of optical quality or appearance, the product makes rooms with large glazing areas comfortable to be in in cold weather. All defects observed were present when built; there appears to be no in-field degradation of quality at this time.

  4. Field-Programmable Gate Array Computer in Structural Analysis: An Initial Exploration

    NASA Technical Reports Server (NTRS)

    Singleterry, Robert C., Jr.; Sobieszczanski-Sobieski, Jaroslaw; Brown, Samuel

    2002-01-01

    This paper reports on an initial assessment of using a Field-Programmable Gate Array (FPGA) computational device as a new tool for solving structural mechanics problems. A FPGA is an assemblage of binary gates arranged in logical blocks that are interconnected via software in a manner dependent on the algorithm being implemented and can be reprogrammed thousands of times per second. In effect, this creates a computer specialized for the problem that automatically exploits all the potential for parallel computing intrinsic in an algorithm. This inherent parallelism is the most important feature of the FPGA computational environment. It is therefore important that if a problem offers a choice of different solution algorithms, an algorithm of a higher degree of inherent parallelism should be selected. It is found that in structural analysis, an 'analog computer' style of programming, which solves problems by direct simulation of the terms in the governing differential equations, yields a more favorable solution algorithm than current solution methods. This style of programming is facilitated by a 'drag-and-drop' graphic programming language that is supplied with the particular type of FPGA computer reported in this paper. Simple examples in structural dynamics and statics illustrate the solution approach used. The FPGA system also allows linear scalability in computing capability. As the problem grows, the number of FPGA chips can be increased with no loss of computing efficiency due to data flow or algorithmic latency that occurs when a single problem is distributed among many conventional processors that operate in parallel. This initial assessment finds the FPGA hardware and software to be in their infancy in regard to the user conveniences; however, they have enormous potential for shrinking the elapsed time of structural analysis solutions if programmed with algorithms that exhibit inherent parallelism and linear scalability. This potential warrants further

  5. Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

    DOEpatents

    Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

    2001-01-01

    A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

  6. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

    NASA Astrophysics Data System (ADS)

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-08-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture.

  7. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields.

    PubMed

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture.

  8. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

    PubMed Central

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

  9. Topological Insulators in Magnetic Fields: Quantum Hall Effect and Edge Channels with a Nonquantized θ Term

    NASA Astrophysics Data System (ADS)

    Sitte, M.; Rosch, A.; Altman, E.; Fritz, L.

    2012-03-01

    We investigate how a magnetic field induces one-dimensional edge channels when the two-dimensional surface states of three-dimensional topological insulators become gapped. The Hall effect, measured by contacting those channels, remains quantized even in situations where the θ term in the bulk and the associated surface Hall conductivities, σxyS, are not quantized due to the breaking of time-reversal symmetry. The quantization arises as the θ term changes by ±2πn along a loop around n edge channels. Model calculations show how an interplay of orbital and Zeeman effects leads to quantum Hall transitions, where channels get redistributed along the edges of the crystal. The network of edges opens new possibilities to investigate the coupling of edge channels.

  10. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields.

    PubMed

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

  11. Crystalline In-Ga-Zn-O FET-based configuration memory for multi-context field-programmable gate array realizing fine-grained power gating

    NASA Astrophysics Data System (ADS)

    Kozuma, Munehiro; Okamoto, Yuki; Nakagawa, Takashi; Aoki, Takeshi; Ikeda, Masataka; Osada, Takeshi; Kurokawa, Yoshiyuki; Ikeda, Takayuki; Yamade, Naoto; Okazaki, Yutaka; Miyairi, Hidekazu; Fujita, Masahiro; Koyama, Jun; Yamazaki, Shunpei

    2014-01-01

    A multi-context (MC) field-programmable gate array (FPGA) enabling fine-grained power gating (PG) is fabricated by a hybrid process involving a 1.0 µm c-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO) field-effect transistor (FET), which is one of CAAC oxide-semiconductor (OS) FETs, and a 0.5 µm complementary metal oxide semiconductor (CMOS) FET. The FPGA achieves a 20% layout area reduction in a routing switch and an 82.8% reduction in power required to retain data of configuration memory (CM) cells at 2.5 V driving compared to a static random access memory (SRAM)-based FPGA. A controller for fine-grained PG can be implemented at an area overhead of 7.5% per programmable logic element (PLE) compared to a PLE without PG. For each PLE, the power overhead with fine-grained PG amounts to 2.25 and 2.26 nJ for power-on and power-off, respectively, and break-even time (BET) is 19.4 µs at 2.5 V and 10 MHz driving.

  12. Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

    NASA Astrophysics Data System (ADS)

    Es-Sakhi, Azzedin D.

    Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in sub-nanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor's Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the

  13. Field effect on positron diffusion in semi-insulating GaAs

    SciTech Connect

    Shan, Y.Y.; Asoka-Kumar, P.; Lynn, K.G.; Fung, S.; Beling, C.D.

    1996-07-01

    An energy-tunable monoenergetic positron beam was used to study positron diffusion in the space-charge region of an Au/GaAs(SI) (semi-insulating) Schottky contact, where the electric field reaches {approximately}10{sup 5} Vcm{sup {minus}1} by reverse biasing the diode. An analytical solution of the time-dependent positron drift-diffusion model under an electric field was obtained for the case of a semi-infinite body with a capturing boundary, and explains the experimental results well. A positron diffusion coefficient of 1.8{plus_minus}0.2 cm{sup 2}s{sup {minus}1}, and a positron mobility of 70{plus_minus}10 cm{sup 2}V{sup {minus}1}s{sup {minus}1} in GaAs(SI) at 300 K, were obtained independently. This result is consistent with the Einstein relation. The dependence of the positron current density at the Au/GaAs interface on the electric field shows that GaAs(SI) is a possible candidate for the fabrication of the field-assisted positron moderator. {copyright} {ital 1996 The American Physical Society.}

  14. Electric-field-induced spin resonance in antiferromagnetic insulators: Inverse process of the dynamical chiral magnetic effect

    NASA Astrophysics Data System (ADS)

    Sekine, Akihiko; Chiba, Takahiro

    2016-06-01

    We propose a realization of the electric-field-induced antiferromagnetic resonance. We consider three-dimensional antiferromagnetic insulators with spin-orbit coupling characterized by the existence of a topological term called the θ term. By solving the Landau-Lifshitz-Gilbert equation in the presence of the θ term, we show that, in contrast to conventional methods using ac magnetic fields, the antiferromagnetic resonance state is realized by ac electric fields along with static magnetic fields. This mechanism can be understood as the inverse process of the dynamical chiral magnetic effect, an alternating current generation by magnetic fields. In other words, we propose a way to electrically induce the dynamical axion field in condensed matter. We discuss a possible experiment to observe our proposal, which utilizes the spin pumping from the antiferromagnetic insulator into a heavy metal contact.

  15. Radiation-Insensitive Inverse Majority Gates

    NASA Technical Reports Server (NTRS)

    Manohara, Harish; Mojarradi, Mohammad

    2008-01-01

    To help satisfy a need for high-density logic circuits insensitive to radiation, it has been proposed to realize inverse majority gates as microscopic vacuum electronic devices. In comparison with solid-state electronic devices ordinarily used in logic circuits, vacuum electronic devices are inherently much less adversely affected by radiation and extreme temperatures. The proposed development would involve state-of-the-art micromachining and recent advances in the fabrication of carbon-nanotube-based field emitters. A representative three-input inverse majority gate would be a monolithic, integrated structure that would include three gate electrodes, six bundles of carbon nanotubes (serving as electron emitters) at suitable positions between the gate electrodes, and an overhanging anode. The bundles of carbon nanotubes would be grown on degenerately doped silicon substrates that would be parts of the monolithic structure. The gate electrodes would be fabricated as parts of the monolithic structure by means of a double-silicon-on-insulator process developed at NASA's Jet Propulsion Laboratory. The tops of the bundles of carbon nanotubes would lie below the plane of the tops of the gate electrodes. The particular choice of shapes, dimensions, and relative positions of the electrodes and bundles of carbon nanotubes would provide for both field emission of electrons from the bundles of carbon nanotubes and control of the electron current to obtain the inverse majority function, which is described in the paper.

  16. A bottom-gate silicon nanowire field-effect transistor with functionalized palladium nanoparticles for hydrogen gas sensors

    NASA Astrophysics Data System (ADS)

    Choi, Bongsik; Ahn, Jae-Hyuk; Lee, Jieun; Yoon, Jinsu; Lee, Juhee; Jeon, Minsu; Kim, Dong Myong; Kim, Dae Hwan; Park, Inkyu; Choi, Sung-Jin

    2015-12-01

    The highly sensitive operation of a bottom-gate silicon nanowire (SiNW) field-effect transistor (FET)-based hydrogen (H2) sensor is demonstrated by controlling the working regime of the sensor. It is observed that the deposition of palladium (Pd) nanoparticles on the SiNW surface for the selective absorption of H2 can result in a significant enhancement of the electrostatic properties, such as the subthreshold swing and on-current, of the SiNW FET-based H2 sensor. By comparing the experimental results with the numerical simulation, we conclude that the improvement of the electrostatic properties of the sensor is due to the coupling effect between the electrostatic potentials in the Pd nanoparticle and bottom gate. Based on these results, highly sensitive detection of H2 gas could be achieved in the subthreshold regime where the gating effect induced by absorbed H2 gas is the most effective.

  17. Fabrication and independent control of patterned polymer gate for a few-layer WSe2 field-effect transistor

    NASA Astrophysics Data System (ADS)

    Hong, Sung Ju; Park, Min; Kang, Hojin; Lee, Minwoo; Jeong, Dae Hong; Park, Yung Woo

    2016-08-01

    We report the fabrication of a patterned polymer electrolyte for a two-dimensional (2D) semiconductor, few-layer tungsten diselenide (WSe2) field-effect transistor (FET). We expose an electron-beam in a desirable region to form the patterned structure. The WSe2 FET acts as a p-type semiconductor in both bare and polymer-covered devices. We observe a highly efficient gating effect in the polymer-patterned device with independent gate control. The patterned polymer gate operates successfully in a molybdenum disulfide (MoS2) FET, indicating the potential for general applications to 2D semiconductors. The results of this study can contribute to large-scale integration and better flexibility in transition metal dichalcogenide (TMD)-based electronics.

  18. Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

    SciTech Connect

    Goswami, Arunesh; Trew, Robert J.; Bilbro, Griff L.

    2014-10-28

    A physics based model of the gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors is demonstrated. The model is based on the space charge limited current flow dominated by the effects of deep traps in the InAlN surface layer. The model predicts accurately the gate-leakage measurement data of the N-polar InAlN/GaN device with InAlN cap layer. In the pinch-off state, the gate leakage current conduction through the surface of the device in the drain access region dominates the current flow through the two dimensional electron gas channel. One deep trap level and two levels of shallow traps are extracted by fitting the model results with measurement data.

  19. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

    NASA Astrophysics Data System (ADS)

    Inaba, Masafumi; Muta, Tsubasa; Kobayashi, Mikinori; Saito, Toshiki; Shibata, Masanobu; Matsumura, Daisuke; Kudo, Takuya; Hiraiwa, Atsushi; Kawarada, Hiroshi

    2016-07-01

    The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

  20. Mean-field theory for the Mott-insulator-paired-superfluid phase transition in the two-species Bose-Hubbard model

    SciTech Connect

    Iskin, M.

    2010-11-15

    The standard mean-field theory for the Mott-insulator-superfluid phase transition is not sufficient to describe the Mott-insulator-paired-superfluid phase transition. Therefore, by restricting the two-species Bose-Hubbard Hamiltonian to the subspace of paired particles, and using perturbation theory, here we derive an analytic mean-field expression for the Mott-insulator-paired-superfluid transition boundary.

  1. Physiologically gated micro-beam radiation therapy using electronically controlled field emission x-ray source array

    NASA Astrophysics Data System (ADS)

    Chtcheprov, Pavel; Hadsell, Michael; Burk, Laurel; Ger, Rachel; Zhang, Lei; Yuan, Hong; Lee, Yueh Z.; Chang, Sha; Lu, Jianping; Zhou, Otto

    2013-03-01

    Micro-beam radiation therapy (MRT) uses parallel planes of high dose narrow (10-100 um in width) radiation beams separated by a fraction of a millimeter to treat cancerous tumors. This experimental therapy method based on synchrotron radiation has been shown to spare normal tissue at up to 1000Gy of entrance dose while still being effective in tumor eradication and extending the lifetime of tumor-bearing small animal models. Motion during the treatment can result in significant movement of micro beam positions resulting in broader beam width and lower peak to valley dose ratio (PVDR), and thus can reduce the effectiveness of the MRT. Recently we have developed the first bench-top image guided MRT system for small animal treatment using a high powered carbon nanotube (CNT) x-ray source array. The CNT field emission x-ray source can be electronically synchronized to an external triggering signal to enable physiologically gated firing of x-ray radiation to minimize motion blurring. Here we report the results of phantom study of respiratory gated MRT. A simulation of mouse breathing was performed using a servo motor. Preliminary results show that without gating the micro beam full width at tenth maximum (FWTM) can increase by 70% and PVDR can decrease up to 50%. But with proper gating, both the beam width and PVDR changes can be negligible. Future experiments will involve irradiation of mouse models and comparing histology stains between the controls and the gated irradiation.

  2. Electron Transport in Graphene Nanoribbon Field-Effect Transistor under Bias and Gate Voltages: Isochemical Potential Approach.

    PubMed

    Yun, Jeonghun; Lee, Geunsik; Kim, Kwang S

    2016-07-01

    Zigzag graphene nanoribbon (zGNR) of narrow width has a moderate energy gap in its antiferromagnetic ground state. So far, first-principles electron transport calculations have been performed using nonequilibrium Green function (NEGF) method combined with density functional theory (DFT). However, the commonly practiced bottom-gate control has not been studied computationally due to the need to simulate an electron reservoir that fixes the chemical potential of electrons in the zGNR and electrodes. Here, we present the isochemical potential scheme to describe the top/back-gate effect using external potential. Then, we examine the change in electronic state under the modulation of chemical potential and the subsequent electron transport phenomena in zGNR transistor under substantial top-/back-gate and bias voltages. The gate potential can activate the device states resulting in a boosted current. This gate-controlled current-boosting could be utilized for designing novel zGNR field effect transistors (FETs). PMID:27299184

  3. T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers

    NASA Astrophysics Data System (ADS)

    Gupta, Ritesh; Rathi, Servin; Kaur, Ravneet; Gupta, Mridula; Gupta, R. S.

    2009-03-01

    In order to achieve superior RF performance, short gate length is required for the compound semiconductor field effect transistors, but the limitation in lithography for submicrometer gate lengths leads to the formation of various metal-insulator geometries like T-gate [Sandeep R. Bahl, Jesus A. del Alamo, Physics of breakdown in InAlAs/ n +-InGaAs heterostructure field-effect transistors, IEEE Trans. Electron Devices 41 (12) (1994) 2268-2275]. These geometries are the combination of various Metal-Semiconductor (MS)/Metal-Air-Semiconductor (MAS) contacts. Moreover, field plates [S. Karmalkar, M.S. Shur, G. Simin, M. Asif Khan, Field-plate engineering for HFETs, IEEE Trans. Electron Devices 52 (2005) 2534-2540] are also being fabricated these days, mainly at the drain end ( Γ-gate) having Metal-Insulator-Semiconductor (MIS) instead of MAS contact with the intention of increasing the breakdown voltage of the device. To realize the effect of upper gate electrode in the T-gate structure and field plates, an analytical model has been proposed in the present article by dividing the whole structure into MS/MIS contact regions, applying current continuity among them and solving iteratively. The model proposed for Metal-Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) [R. Gupta, S.K. Aggarwal, M. Gupta, R.S. Gupta, Analytical model for metal insulator semiconductor high electron mobility transistor (MISHEMT) for its high frequency and high power applications, J. Semicond. Technol. Sci. 6 (3) (2006) 189-198], is equally applicable to High Electron Mobility Transistors (HEMT) and has been used to formulate this model. In this paper, various structures and geometries have been compared to anticipate the need of T-gate modeling. The effect of MIS contacts has been implemented as parasitic resistance and capacitance and has also been studied to control the middle conventional gate as in dual gate technology by applying separate voltages across it. The results

  4. Electrical and chemical characterization of FIB-deposited insulators

    SciTech Connect

    Campbell, A.N.; Tanner, D.M.; Soden, J.M.; Adams, E.; Gibson, M.; Abramo, M.; Doyle, A.; Stewart, D.K.

    1997-10-01

    The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxane-based FIB-insulators had superior electrical properties to those based on TEOS. Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a function of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric SiO{sub 2} insulators.

  5. Feasibility of a portable morphological scene change detection security system for field programmable gate arrays (FPGA)

    NASA Astrophysics Data System (ADS)

    Tickle, Andrew J.; Smith, Jeremy S.; Wu, Q. Henry

    2008-04-01

    In this paper, there is an investigation into the possibility of executing a Morphological Scene Change Detection (MSCD) system on a Field Programmable Gate Array (FPGA), which would allow its set up in virtually any location, with its purpose to detect intruders and raise an alarm to call security personal, and a signal to initial a lockdown of the local area. This paper will include how the system was scaled down from the full building multi-computer system, to an FPGA without losing any functionality using Altera's DSP Builder development tool. Also included is the analysis of the different situations which the system would encounter in the field, and their respective alarm triggering levels, these include indoors, outdoors, close-up, distance, high-brightness, low-light, bad weather, etc. The triggering mechanism is a pixel counter and threshold system, and its adaptive design will be included. All the results shown in this paper, will also be verified by MATLAB m-files running on a full desktop PC, to show that the results obtained from the FPGA based system are accurate.

  6. Design of acoustic logging signal source of imitation based on field programmable gate array

    NASA Astrophysics Data System (ADS)

    Zhang, K.; Ju, X. D.; Lu, J. Q.; Men, B. Y.

    2014-08-01

    An acoustic logging signal source of imitation is designed and realized, based on the Field Programmable Gate Array (FPGA), to improve the efficiency of examining and repairing acoustic logging tools during research and field application, and to inspect and verify acoustic receiving circuits and corresponding algorithms. The design of this signal source contains hardware design and software design,and the hardware design uses an FPGA as the control core. Four signals are made first by reading the Random Access Memory (RAM) data which are inside the FPGA, then dealing with the data by digital to analog conversion, amplification, smoothing and so on. Software design uses VHDL, a kind of hardware description language, to program the FPGA. Experiments illustrate that the ratio of signal to noise for the signal source is high, the waveforms are stable, and also its functions of amplitude adjustment, frequency adjustment and delay adjustment are in accord with the characteristics of real acoustic logging waveforms. These adjustments can be used to imitate influences on sonic logging received waveforms caused by many kinds of factors such as spacing and span of acoustic tools, sonic speeds of different layers and fluids, and acoustic attenuations of different cementation planes.

  7. Measurement of insulating and dielectric properties of acrylic elastomer membranes at high electric fields

    NASA Astrophysics Data System (ADS)

    Di Lillo, L.; Schmidt, A.; Carnelli, D. A.; Ermanni, P.; Kovacs, G.; Mazza, E.; Bergamini, A.

    2012-01-01

    This work reports on the investigation of VHB 4910 acrylic elastomer insulating and dielectric properties. This material is widely exploited for the realization of actuators with large deformations, dielectric elastomer actuators (DEA), and belongs to the group of so-called electroactive polymers (EAP). Extensive investigations concerning its mechanical properties are available in literature while its electric behavior at working conditions has not received the same level of attention. In this work, the relative permittivity and the volume resistivity have been measured on VHB 4910 membranes under different fixed stretch conditions (λ1, λ2 = 3, 3.6, 4, 5) using circular gold electrodes sputtered onto both sides of the specimens. The measured values of relative permittivity are in fairly good agreement with the results previously published by other groups. The volume resistivity, at field values close to the operational ones, has shown a field-dependent behavior revealing dissipative properties that should be considered in real applications. Further, measurements on circular actuators verify these findings. Consequences for modeling of VHB 4910 are drawn and new material model parameters proposed to account for the value of relative permittivity at high electric fields.

  8. Gating capacitive field-effect sensors by the charge of nanoparticle/molecule hybrids

    NASA Astrophysics Data System (ADS)

    Poghossian, Arshak; Bäcker, Matthias; Mayer, Dirk; Schöning, Michael J.

    2014-12-01

    The semiconductor field-effect platform is a powerful tool for chemical and biological sensing with direct electrical readout. In this work, the field-effect capacitive electrolyte-insulator-semiconductor (EIS) structure - the simplest field-effect (bio-)chemical sensor - modified with citrate-capped gold nanoparticles (AuNPs) has been applied for a label-free electrostatic detection of charged molecules by their intrinsic molecular charge. The EIS sensor detects the charge changes in AuNP/molecule inorganic/organic hybrids induced by the molecular adsorption or binding events. The feasibility of the proposed detection scheme has been exemplarily demonstrated by realizing capacitive EIS sensors consisting of an Al-p-Si-SiO2-silane-AuNP structure for the label-free detection of positively charged cytochrome c and poly-d-lysine molecules as well as for monitoring the layer-by-layer formation of polyelectrolyte multilayers of poly(allylamine hydrochloride)/poly(sodium 4-styrene sulfonate), representing typical model examples of detecting small proteins and macromolecules and the consecutive adsorption of positively/negatively charged polyelectrolytes, respectively. For comparison, EIS sensors without AuNPs have been investigated, too. The adsorption of molecules on the surface of AuNPs has been verified via the X-ray photoelectron spectroscopy method. In addition, a theoretical model of the functioning of the capacitive field-effect EIS sensor functionalized with AuNP/charged-molecule hybrids has been discussed.The semiconductor field-effect platform is a powerful tool for chemical and biological sensing with direct electrical readout. In this work, the field-effect capacitive electrolyte-insulator-semiconductor (EIS) structure - the simplest field-effect (bio-)chemical sensor - modified with citrate-capped gold nanoparticles (AuNPs) has been applied for a label-free electrostatic detection of charged molecules by their intrinsic molecular charge. The EIS sensor

  9. Building America Case Study: Field Testing an Unvented Roof with Fibrous Insulation and Tiles, Orlando, Florida

    SciTech Connect

    2015-11-01

    This research is a test implementation of an unvented tile roof assembly in a hot-humid climate (Orlando, FL; Zone 2A), insulated with air permeable insulation (netted and blown fiberglass). Given the localized moisture accumulation and failures seen in previous unvented roof field work, it was theorized that a 'diffusion vent' (water vapor open, but air barrier 'closed') at the highest points in the roof assembly might allow for the wintertime release of moisture, to safe levels. The 'diffusion vent' is an open slot at the ridge and hips, covered with a water-resistant but vapor open (500+ perm) air barrier membrane. As a control comparison, one portion of the roof was constructed as a typical unvented roof (self-adhered membrane at ridge). The data collected to date indicate that the diffusion vent roof shows greater moisture safety than the conventional, unvented roof design. The unvented roof had extended winter periods of 95-100% RH, and wafer (wood surrogate RH sensor) measurements indicating possible condensation; high moisture levels were concentrated at the roof ridge. In contrast, the diffusion vent roofs had drier conditions, with most peak MCs (sheathing) below 20%. In the spring, as outdoor temperatures warmed, all roofs dried well into the safe range (10% MC or less). Some roof-wall interfaces showed moderately high MCs; this might be due to moisture accumulation at the highest point in the lower attic, and/or shading of the roof by the adjacent second story. Monitoring will be continued at least through spring 2016 (another winter and spring).

  10. Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

    SciTech Connect

    Lagger, P.; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Ostermaier, C.; Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J.; Pogany, D.

    2014-07-21

    The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔV{sub th}, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness t{sub D} and barrier thickness t{sub B}, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔN{sub it}, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔN{sub it} is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

  11. Wide-field time-gated photoluminescence microscopy for fast ultrahigh-sensitivity imaging of photoluminescent probes.

    PubMed

    Razali, Wan A W; Sreenivasan, Varun K A; Bradac, Carlo; Connor, Mark; Goldys, Ewa M; Zvyagin, Andrei V

    2016-08-01

    Fluorescence microscopy is a fundamental technique for the life sciences, where biocompatible and photostable photoluminescence probes in combination with fast and sensitive imaging systems are continually transforming this field. A wide-field time-gated photoluminescence microscopy system customised for ultrasensitive imaging of unique nanoruby probes with long photoluminescence lifetime is described. The detection sensitivity derived from the long photoluminescence lifetime of the nanoruby makes it possible to discriminate signals from unwanted autofluorescence background and laser backscatter by employing a time-gated image acquisition mode. This mode enabled several-fold improvement of the photoluminescence imaging contrast of discrete nanorubies dispersed on a coverslip. It enabled recovery of the photoluminescence signal emanating from discrete nanorubies when covered by a layer of an organic fluorescent dye, which were otherwise invisible without the use of spectral filtering approaches. Time-gated imaging also facilitated high sensitivity detection of nanorubies in a biological environment of cultured cells. Finally, we monitor the binding kinetics of nanorubies to a functionalised substrate, which exemplified a real-time assay in biological fluids. 3D-pseudo colour images of nanorubies immersed in a highly fluorescent dye solution. Nanoruby photoluminescence is subdued by that of the dye in continuous excitation/imaging (left), however it can be recovered by time-gated imaging (right). At the bottom is schematic diagram of nanoruby assay in a biological fluid. PMID:27264934

  12. On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell.

    PubMed

    Petterson, Maureen K; Lemaitre, Maxime G; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V; Kravchenko, Ivan I; Rinzler, Andrew G

    2015-09-30

    Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separated there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm(2) AM1.5G illumination, results in a short-circuit current density of 35 mA/cm(2) and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.

  13. On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

    SciTech Connect

    Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V.; Kravchenko, Ivan I.; Rinzler, Andrew G.

    2015-09-09

    Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separated there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.

  14. On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

    DOE PAGES

    Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V.; Kravchenko, Ivan I.; Rinzler, Andrew G.

    2015-09-09

    Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separatedmore » there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.« less

  15. A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high- k gate dielectrics

    NASA Astrophysics Data System (ADS)

    Chiang, T. K.; Chen, M. L.

    2007-03-01

    Based on the fully two-dimensional (2D) Poisson's solution in both silicon film and insulator layer, a compact and analytical threshold voltage model, which accounts for the fringing field effect of the short channel symmetrical double-gate (SDG) MOSFETs, has been developed. Exploiting the new model, a concerned analysis combining FIBL-enhanced short-channel effects and high- k gate dielectrics assess their overall impact on SDG MOSFET's scaling. It is found that for the same equivalent oxide thickness, the gate insulator with high- k dielectric constant which keeps a great characteristic length allows less design space than SiO 2 to sustain the same FIBL induced threshold voltage degradation.

  16. Electronic Excitations and Metal-Insulator Transition inPoly(3-hexylthiophene) Organic Field-Effect Transistors

    SciTech Connect

    Sai, N.; Li, Z.Q.; Martin, M.C.; Basov, D.N.; Di Ventra, M.

    2006-11-07

    We carry out a comprehensive theoretical and experimentalstudy of charge injection in poly(3-hexylthiophene) (P3HT) to determinethe most likely scenario for metal-insulator transition in this system.Wecalculate the optical-absorption frequencies corresponding to a polaronand a bipolaron lattice in P3HT. We also analyze the electronicexcitations for three possible scenarios under which a first- or asecond-order metal-insulator transition can occur in doped P3HT. Thesetheoretical scenarios are compared with data from infrared absorptionspectroscopy on P3HT thin-film field-effect transistors (FETs). Ourmeasurements and theoretical predictions suggest that charge-inducedlocalized states in P3HT FETs are bipolarons and that the highest dopinglevel achieved in our experiments approaches that required for afirst-order metal-insulator transition.

  17. Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors.

    PubMed

    Pal, Bhola N; Dhar, Bal Mukund; See, Kevin C; Katz, Howard E

    2009-11-01

    Sodium beta-alumina (SBA) has high two-dimensional conductivity, owing to mobile sodium ions in lattice planes, between which are insulating AlO(x) layers. SBA can provide high capacitance perpendicular to the planes, while causing negligible leakage current owing to the lack of electron carriers and limited mobility of sodium ions through the aluminium oxide layers. Here, we describe sol-gel-beta-alumina films as transistor gate dielectrics with solution-deposited zinc-oxide-based semiconductors and indium tin oxide (ITO) gate electrodes. The transistors operate in air with a few volts input. The highest electron mobility, 28.0 cm2 V(-1) s(-1), was from zinc tin oxide (ZTO), with an on/off ratio of 2 x 10(4). ZTO over a lower-temperature, amorphous dielectric, had a mobility of 10 cm2 V(-1) s(-1). We also used silicon wafer and flexible polyimide-aluminium foil substrates for solution-processed n-type oxide and organic transistors. Using poly(3,4-ethylenedioxythiophene) poly(styrenesulphonate) conducting polymer electrodes, we prepared an all-solution-processed, low-voltage transparent oxide transistor on an ITO glass substrate. PMID:19838183

  18. Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors.

    PubMed

    Pal, Bhola N; Dhar, Bal Mukund; See, Kevin C; Katz, Howard E

    2009-11-01

    Sodium beta-alumina (SBA) has high two-dimensional conductivity, owing to mobile sodium ions in lattice planes, between which are insulating AlO(x) layers. SBA can provide high capacitance perpendicular to the planes, while causing negligible leakage current owing to the lack of electron carriers and limited mobility of sodium ions through the aluminium oxide layers. Here, we describe sol-gel-beta-alumina films as transistor gate dielectrics with solution-deposited zinc-oxide-based semiconductors and indium tin oxide (ITO) gate electrodes. The transistors operate in air with a few volts input. The highest electron mobility, 28.0 cm2 V(-1) s(-1), was from zinc tin oxide (ZTO), with an on/off ratio of 2 x 10(4). ZTO over a lower-temperature, amorphous dielectric, had a mobility of 10 cm2 V(-1) s(-1). We also used silicon wafer and flexible polyimide-aluminium foil substrates for solution-processed n-type oxide and organic transistors. Using poly(3,4-ethylenedioxythiophene) poly(styrenesulphonate) conducting polymer electrodes, we prepared an all-solution-processed, low-voltage transparent oxide transistor on an ITO glass substrate.

  19. Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistors

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2002-01-01

    The threshold voltages of a carbon nanotube (CNT) field-effect transistor (FET) are derived and compared with those of the metal oxide-semiconductor (MOS) FETs. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, which is the CNT diameter direction, and this makes the CNTFET characteristics quite different from those in MOSFETs. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and it is shown that the familiar relations are still valid because of the macroscopic number of states available in the CNTs. This is in sharp contrast to the cases of quantum dots. Using these relations, we derive an inversion threshold voltage V(sub Ti) and an accumulation threshold voltage V(sub Ta) as a function of the Fermi level E(sub F) in the channel, where E(sub F) is a measure of channel doping. V(sub Ti) of the CNTFETs has a much stronger dependence than that of MOSFETs, while V(sub Ta)s of both CNTFETs and MOSFETs depend quite weakly on E(sub F) with the same functional form. This means the transition from normally-off mode to normally-on mode is much sharper in CNTFETs as the doping increases, and this property has to be taken into account in circuit design.

  20. Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor.

    PubMed

    Gonzalez-Zalba, M Fernando; Shevchenko, Sergey N; Barraud, Sylvain; Johansson, J Robert; Ferguson, Andrew J; Nori, Franco; Betz, Andreas C

    2016-03-01

    Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunneling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio frequency resonant circuit coupled via the gate. Differential capacitance changes at the interdot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-Stückelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunneling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, T2 ≈ 100 ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.

  1. Evaluation of soft-core processors on a Xilinx Virtex-5 field programmable gate array.

    SciTech Connect

    Learn, Mark Walter

    2011-04-01

    Node-based architecture (NBA) designs for future satellite projects hold the promise of decreasing system development time and costs, size, weight, and power and positioning the laboratory to address other emerging mission opportunities quickly. Reconfigurable field programmable gate array (FPGA)-based modules will comprise the core of several of the NBA nodes. Microprocessing capabilities will be necessary with varying degrees of mission-specific performance requirements on these nodes. To enable the flexibility of these reconfigurable nodes, it is advantageous to incorporate the microprocessor into the FPGA itself, either as a hard-core processor built into the FPGA or as a soft-core processor built out of FPGA elements. This document describes the evaluation of three reconfigurable FPGA-based soft-core processors for use in future NBA systems: the MicroBlaze (uB), the open-source Leon3, and the licensed Leon3. Two standard performance benchmark applications were developed for each processor. The first, Dhrystone, is a fixed-point operation metric. The second, Whetstone, is a floating-point operation metric. Several trials were run at varying code locations, loop counts, processor speeds, and cache configurations. FPGA resource utilization was recorded for each configuration.

  2. Boron δ-doped (111) diamond solution gate field effect transistors.

    PubMed

    Edgington, Robert; Ruslinda, A Rahim; Sato, Syunsuke; Ishiyama, Yuichiro; Tsuge, Kyosuke; Ono, Tasuku; Kawarada, Hiroshi; Jackman, Richard B

    2012-03-15

    A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (111) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I-V) characteristics in comparison to previous similar devices fabricated on (100) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET. The oxidised device shows a site-binding model pH sensitivity of 36 mV/pH, displaying fast temporal responses. Considering the biocompatibility of diamond towards cells, the device's highly mutable transistor characteristics, pH sensitivity and stability against anodic oxidation common to hydrogen terminated diamond SGFET, oxidised boron δ-doped diamond SGFETs show promise for the recording of action potentials from electrogenic cells.

  3. Modular design and implementation of field-programmable-gate-array-based Gaussian noise generator

    NASA Astrophysics Data System (ADS)

    Li, Yuan-Ping; Lee, Ta-Sung; Hwang, Jeng-Kuang

    2016-05-01

    The modular design of a Gaussian noise generator (GNG) based on field-programmable gate array (FPGA) technology was studied. A new range reduction architecture was included in a series of elementary function evaluation modules and was integrated into the GNG system. The approximation and quantisation errors for the square root module with a first polynomial approximation were high; therefore, we used the central limit theorem (CLT) to improve the noise quality. This resulted in an output rate of one sample per clock cycle. We subsequently applied Newton's method for the square root module, thus eliminating the need for the use of the CLT because applying the CLT resulted in an output rate of two samples per clock cycle (>200 million samples per second). Two statistical tests confirmed that our GNG is of high quality. Furthermore, the range reduction, which is used to solve a limited interval of the function approximation algorithms of the System Generator platform using Xilinx FPGAs, appeared to have a higher numerical accuracy, was operated at >350 MHz, and can be suitably applied for any function evaluation.

  4. Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors.

    PubMed

    Mackin, Charles; Palacios, Tomás

    2016-04-25

    This work reports a novel graphene electrolyte-gated field-effect transistor (EGFET) array architecture along with a compact, self-contained, and inexpensive measurement system that allows DC characterization of hundreds of graphene EGFETs as a function of VDS and VGS within a matter of minutes. We develop a reliable graphene EGFET fabrication process capable of producing 100% yield for a sample size of 256 devices. Large sample size statistical analysis of graphene EGFET electrical performance is performed for the first time. This work develops a compact piecewise DC model for graphene EGFETs that is shown capable of fitting 87% of IDSvs. VGS curves with a mean percent error of 7% or less. The model is used to extract variations in device parameters such as mobility, contact resistance, minimum carrier concentration, and Dirac point. Correlations in variations are presented. Lastly, this work presents a framework for application-specific optimization of large-scale sensor designs based on graphene EGFETs. PMID:26788552

  5. Single Event Effects Test Results for Advanced Field Programmable Gate Arrays

    NASA Technical Reports Server (NTRS)

    Allen, Gregory R.; Swift, Gary M.

    2006-01-01

    Reconfigurable Field Programmable Gate Arrays (FPGAs) from Altera and Actel and an FPGA-based quick-turnApplication Specific Integrated Circuit (ASIC) from Altera were subjected to single-event testing using heavy ions. Both Altera devices (Stratix II and HardCopy II) exhibited a low latchup threshold (below an LET of 3 MeV-cm2/mg) and thus are not recommended for applications in the space radiation environment. The flash-based Actel ProASIC Plus device did not exhibit latchup to an effective LET of 75 MeV-cm2/mg at room temperature. In addition, these tests did not show flash cell charge loss (upset) or retention damage. Upset characterization of the design-level flip-flops yielded an LET threshold below 10 MeV-cm2/mg and a high LET cross section of about lxlO-6 cm2/bit for storing ones and about lxl0-7 cm2/bit for storing zeros . Thus, the ProASIC device may be suitable for critical flight applications with appropriate triple modular redundancy mitigation techniques.

  6. Real-time processing for Fourier domain optical coherence tomography using a field programmable gate array

    PubMed Central

    Ustun, Teoman E.; Iftimia, Nicusor V.; Ferguson, R. Daniel; Hammer, Daniel X.

    2008-01-01

    Real-time display of processed Fourier domain optical coherence tomography (FDOCT) images is important for applications that require instant feedback of image information, for example, systems developed for rapid screening or image-guided surgery. However, the computational requirements for high-speed FDOCT image processing usually exceeds the capabilities of most computers and therefore display rates rarely match acquisition rates for most devices. We have designed and developed an image processing system, including hardware based upon a field programmable gated array, firmware, and software that enables real-time display of processed images at rapid line rates. The system was designed to be extremely flexible and inserted in-line between any FDOCT detector and any Camera Link frame grabber. Two versions were developed for spectrometer-based and swept source-based FDOCT systems, the latter having an additional custom high-speed digitizer on the front end but using all the capabilities and features of the former. The system was tested in humans and monkeys using an adaptive optics retinal imager, in zebrafish using a dual-beam Doppler instrument, and in human tissue using a swept source microscope. A display frame rate of 27 fps for fully processed FDOCT images (1024 axial pixels×512 lateral A-scans) was achieved in the spectrometer-based systems. PMID:19045902

  7. Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor.

    PubMed

    Gonzalez-Zalba, M Fernando; Shevchenko, Sergey N; Barraud, Sylvain; Johansson, J Robert; Ferguson, Andrew J; Nori, Franco; Betz, Andreas C

    2016-03-01

    Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunneling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio frequency resonant circuit coupled via the gate. Differential capacitance changes at the interdot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-Stückelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunneling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, T2 ≈ 100 ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology. PMID:26866446

  8. A self-timed multipurpose delay sensor for Field Programmable Gate Arrays (FPGAs).

    PubMed

    Osuna, Carlos Gómez; Ituero, Pablo; López-Vallejo, Marisa

    2013-12-20

    This paper presents a novel self-timed multi-purpose sensor especially conceived for Field Programmable Gate Arrays (FPGAs). The aim of the sensor is to measure performance variations during the life-cycle of the device, such as process variability, critical path timing and temperature variations. The proposed topology, through the use of both combinational and sequential FPGA elements, amplifies the time of a signal traversing a delay chain to produce a pulse whose width is the sensor's measurement. The sensor is fully self-timed, avoiding the need for clock distribution networks and eliminating the limitations imposed by the system clock. One single off- or on-chip time-to-digital converter is able to perform digitization of several sensors in a single operation. These features allow for a simplified approach for designers wanting to intertwine a multi-purpose sensor network with their application logic. Employed as a temperature sensor, it has been measured to have an error of  ±0.67 °C, over the range of 20-100 °C, employing 20 logic elements with a 2-point calibration.

  9. Development and simulation of soft morphological operators for a field programmable gate array

    NASA Astrophysics Data System (ADS)

    Tickle, Andrew J.; Harvey, Paul K.; Smith, Jeremy S.; Wu, Q. Henry

    2013-04-01

    In image processing applications, soft mathematical morphology (MM) can be employed for both binary and grayscale systems and is derived from set theory. Soft MM techniques have improved behavior over standard morphological operations in noisy environments, as they can preserve small details within an image. This makes them suitable for use in image processing applications on portable field programmable gate arrays for tasks such as robotics and security. We explain how the systems were developed using Altera's DSP Builder in order to provide optimized code for the many different devices currently on the market. Also included is how the circuits can be inserted and combined with previously developed work in order to increase their functionality. The testing procedures involved loading different images into these systems and analyzing the outputs against MATLAB-generated validation images. A set of soft morphological operations are described, which can then be applied to various tasks and easily modified in size via altering the line buffer settings inside the system to accommodate a range of image attributes ranging from image sizes such as 320×240 pixels for basic webcam imagery up to high quality 4000×4000 pixel images for military applications.

  10. Halogen-based plasma etching of novel field-effect transistor gate materials

    NASA Astrophysics Data System (ADS)

    Kiehlbaugh, Kasi Michelle

    Vacuum Beam Studies of Ruthenium Etching. Ru is known to have two volatile oxidation products, RuO3 and RuO4, although the etch rate is negligible when Ru is exposed to an O2 plasma discharge. The introduction of a small amount of additive gas, such as Cl2, has been shown to increase the Ru etch rate sixfold. The reason for this dramatic shift in etching is poorly understood, primarily because it is difficult if not impossible to study plasma-surface interactions in a plasma environment. The unique capabilities of the beam system have made it possible to explore the mechanism of Ru etching. It has been shown that under 500 eV Ar+ ion bombardment, the addition of O radicals lowered the etch rate by a factor of 2.5. This process was relatively insensitive to temperature over the range studied (room temperature to ˜175°C). It was also shown that O radicals alone spontaneously etched Ru at a very slow rate over the entire temperature range. Statistical Analysis of Polysilicon Etching and Gate Profile Evolution in Dual-Doped Polysilicon Gates. Polysilicon gate etching for the 90nm lithography node and below requires extremely precise control of the gate CD and profile. Generally speaking, the current requirement for Gate CD control is that the 3 sigma should less than ˜5nm for all gates, including across the chip, across the wafer, wafer-to-wafer, lot-to-lot, and tool-to-tool variations. Similarly, for gate sidewall angle control, the 3 sigma angle variation should be less than ˜1 degree, inclusive of all sources of variation. This is particularly challenging for technologies which employ dual-doped gates, since the chemistry and physics of the etching process induces a different profile evolution between gates with different doping. The goal of this project was to identify a parameter space where the differences in gate profile evolution across different polysilicon dopant types were minimized. Blanket etch rates and patterned wafers were used to determine the

  11. Closing the spin gap in the Kondo insulator Ce3Bi4Pt3 at high magnetic fields

    PubMed

    Jaime; Movshovich; Stewart; Beyermann; Berisso; Hundley; Canfield; Sarrao

    2000-05-11

    Kondo insulator materials--such as CeRhAs, CeRhSb, YbB12, Ce3Bi4Pt3 and SmB6--are 3d, 4f and 5f intermetallic compounds that have attracted considerable interest in recent years. At high temperatures, they behave like metals. But as temperature is reduced, an energy gap opens in the conduction band at the Fermi energy and the materials become insulating. This contrasts with other f-electron compounds, which are metallic at all temperatures. The formation of the gap in Kondo insulators has been proposed to be a consequence of hybridization between the conduction band and the f-electron levels, giving a 'spin' gap. If this is indeed the case, metallic behaviour should be recovered when the gap is closed by changing external parameters, such as magnetic field or pressure. Some experimental evidence suggests that the gap can be closed in SmB6 (refs 5, 8) and YbB12 (ref. 9). Here we present specific-heat measurements of Ce3Bi4Pt3 in d.c. and pulsed magnetic fields up to 60 tesla. Numerical results and the analysis of our data using the Coqblin-Schrieffer model demonstrate unambiguously a field-induced insulator-to-metal transition. PMID:10821266

  12. Technology Solutions Case Study: Field Testing an Unvented Roof with Fibrous Insulation and Tiles

    SciTech Connect

    2015-11-01

    This case study by the U.S. Department of Energy’s Building America research team Building Science Corporation is a test implementation of an unvented tile roof assembly in a hot-humid climate (Orlando, Florida; zone 2A), insulated with air-permeable insulation (netted and blown fiberglass).

  13. A facile route for the fabrication of large-scale gate-all-around nanofluidic field-effect transistors with low leakage current.

    PubMed

    Shin, Sangwoo; Kim, Beom Seok; Song, Jiwoon; Lee, Hwanseong; Cho, Hyung Hee

    2012-07-21

    Active modulation of ions and molecules via field-effect gating in nanofluidic channels is a crucial technology for various promising applications such as DNA sequencing, drug delivery, desalination, and energy conversion. Developing a rapid and facile fabrication method for ionic field-effect transistors (FET) over a large area may offer exciting opportunities for both fundamental research and innovative applications. Here, we report a rapid, cost-effective route for the fabrication of large-scale nanofluidic field-effect transistors using a simple, lithography-free two-step fabrication process that consists of sputtering and barrier-type anodization. A robust alumina gate dielectric layer, which is formed by anodizing sputtered aluminium, can be rapidly fabricated in the order of minutes. When anodizing aluminium, we employ a hemispherical counter electrode in order to give a uniform electric field that encompasses the whole sputtered aluminium layer which has high surface roughness. In consequence, a well-defined thin layer of alumina with perfect step coverage is formed on a highly rough aluminium surface. A gate-all-around nanofluidic FET with a leak-free gate dielectric exhibits outstanding gating performance despite a large channel size. The thin and robust anodized alumina gate dielectric plays a crucial role in achieving such excellent capacitive coupling. The combination of a gate-all-around structure with a leak-free gate dielectric over a large area could yield breakthroughs in areas ranging from biotechnology to energy and environmental applications.

  14. Field emission display device structure based on double-gate driving principle for achieving high brightness using a variety of field emission nanoemitters

    NASA Astrophysics Data System (ADS)

    Chen, Jun; Dai, Y. Y.; Luo, J.; Li, Z. L.; Deng, S. Z.; She, J. C.; Xu, N. S.

    2007-06-01

    In order to apply various cold cathode nanoemitters in a field emission display (FED) and to achieve high brightness, a FED device structure with double gates and corresponding driving method have been proposed. Individual pixel addressing can be achieved by applying proper sequence of positive or negative voltage to the lower gate and upper gate, respectively. The feasibility of the device has been demonstrated by using carbon nanotube and tungsten oxide nanowire cold emitters. Display of moving images has been demonstrated and high luminance up to 2500cd/m2 was obtained. The reported device structure is versatile for nanoemitters regardless of substrate or preparation temperature. The results are of significance to the development of FED using nanoemitters.

  15. Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.

    PubMed

    Yu, Cui; Liu, Hongmei; Ni, Wenbin; Gao, Nengyue; Zhao, Jianwei; Zhang, Haoli

    2011-02-28

    We designed acene molecules attached to two semi-infinite metallic electrodes to explore the source-drain current of graphene and the gate leakage current of the gate dielectric material in the field-effect transistors (FETs) device using the first-principles density functional theory combined with the non-equilibrium Green's function formalism. In the acene-based molecular junctions, we modify the connection position of the thiol group at one side, forming different electron transport routes. The electron transport routes besides the shortest one are defined as the cross channels. The simulation results indicate that electron transport through the cross channels is as efficient as that through the shortest one, since the conductance is weakly dependent on the distance. Thus, it is possible to connect the graphene with multiple leads, leading the graphene as a channel utilized in the graphene-based FETs in the mesoscopic system. When the conjugation of the cross channel is blocked, the junction conductance decreases dramatically. The differential conductance of the BA-1 is nearly 7 (54.57 μS) times as large as that of the BA-4 (7.35 μS) at zero bias. Therefore, the blocked graphene can be employed as the gate dielectric material in the top-gated graphene FET device, since the leakage current is small. The graphene-based field-effect transistors fabricated with a single layer of graphene as the channel and the blocked graphene as the gate dielectric material represent one way to overcome the problem of miniaturization which faces the new generation of transistors.

  16. Low operating voltage n-channel organic field effect transistors using lithium fluoride/PMMA bilayer gate dielectric

    SciTech Connect

    Kumar, S.; Dhar, A.

    2015-10-15

    Highlights: • Alternative to chemically crosslinking of PMMA to achieve low leakage in provided. • Effect of LiF in reducing gate leakage through the OFET device is studied. • Effect of gate leakage on transistor performance has been investigated. • Low voltage operable and low temperature processed n-channel OFETs were fabricated. - Abstract: We report low temperature processed, low voltage operable n-channel organic field effect transistors (OFETs) using N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C{sub 8}) organic semiconductor and poly(methylmethacrylate) (PMMA)/lithium fluoride (LiF) bilayer gate dielectric. We have studied the role of LiF buffer dielectric in effectively reducing the gate leakage through the device and thus obtaining superior performance in contrast to the single layer PMMA dielectric devices. The bilayer OFET devices had a low threshold voltage (V{sub t}) of the order of 5.3 V. The typical values of saturation electron mobility (μ{sub s}), on/off ratio and inverse sub-threshold slope (S) for the range of devices made were estimated to be 2.8 × 10{sup −3} cm{sup 2}/V s, 385, and 3.8 V/decade respectively. Our work thus provides a potential substitution for much complicated process of chemically crosslinking PMMA to achieve low leakage, high capacitance, and thus low operating voltage OFETs.

  17. Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

    SciTech Connect

    Hopf, T.; Vassilevski, K. V. Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P.; Wells, G. H.; Hunt, M. R. C.

    2014-10-21

    Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27 nm thick Al₂O₃ gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100 °C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100 °C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100 °C.

  18. Comparison of Measurement Techniques for Gate Shortening in Sub-Micrometer Metal Oxide Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Bhattacharya, Pradeep; Bari, Mohammad; Rao, Krishnaraj

    1993-08-01

    In this paper, various methods of evaluating the electrical channel length change (or gate shortening) as a result of applied gate voltage in sub-micrometer metal oxide semiconductor field effect transistors (MOSFETs) are investigated and the method best suited for such short channel length devices is reported. Studies were performed on n-channel transistors (n-MOSFETs) fabricated using X-ray and optical lithography and having channel lengths in the range of 0.4 to 4 μm and 1.5 to 10 μm respectively. The effective channel lengths were extracted from the current-voltage (I-V) measurements. The measurements were made for different low and high sets of gate voltages. In comparing various methods it was found that the method due to Terada and Muta, and Chern et al. gave accurate results consistently for short channel MOSFETs, whereas the Whitfield method gave accurate results only for larger channel length MOSFETs. The accuracy of the Whitfield method is sensitive to applied gate voltage during I-V measurements. The Peng and Afromowitz method is unsuitable for finding the effective channel length of sub-micrometer MOSFETs especially if the MOSFETs have high values of external resistance.

  19. Comparison of measurement techniques for gate shortening in sub-micrometer metal oxide semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Bhattacharya, Pradeep; Bari, Mohammad; Rao, Krishnaraj

    1993-08-01

    In this paper, various methods of evaluating the electrical channel length change (or gate shortening) as a result of applied gate voltage in sub-micrometer metal oxide semiconductor field effect transistors (MOSFETs) are investigated and the method best suited for such short channel length devices is reported. Studies were performed on n-channel transistors (n-MOSEFTs) fabricated using X-ray and optical lithography and having channel lengths in the range of 0.4 to 4 micron and 1.5 to 10 micron respectively. The effective channel lengths were extracted from the current-voltage (I-V) measurements. The measurements were made for different low and high sets of gate voltages. In comparing various methods it was found that the method due to Terada and Muta, and Chern et al. gave accurate results consistently for short channel MOSEFTs, whereas the Whitfield method gave accurate results only for larger channel length MOSEFTs. The accuracy of the Whitfield method is sensitive to applied gate voltage during I-V measurements. The Peng and Afromowitz method is unsuitable for finding the effective channel length of sub-micrometer MSFETs especially if the MSFETs have high values of external resistance.

  20. The Helium Field Effect Transistor (II): Gated Transport of Surface-State Electrons Through Micro-constrictions

    NASA Astrophysics Data System (ADS)

    Shaban, F.; Ashari, M.; Lorenz, T.; Rau, R.; Scheer, E.; Kono, K.; Rees, D. G.; Leiderer, P.

    2016-11-01

    We present transport measurements of surface-state electrons on liquid helium films in confined geometry. The measurements are taken using split-gate devices similar to a field effect transistor. The number of electrons passing between the source and drain areas of the device can be precisely controlled by changing the length of the voltage pulse applied to the gate electrode. We find evidence that the effective driving potential depends on electron-electron interactions, as well as the electric field applied to the substrate. Our measurements indicate that the mobility of electrons on helium films can be high and that microfabricated transistor devices allow electron manipulation on length scales close to the interelectron separation. Our experiment is an important step toward investigations of surface-state electron properties at much higher densities, for which the quantum melting of the system to a degenerate Fermi gas should be observed.

  1. The Helium Field Effect Transistor (II): Gated Transport of Surface-State Electrons Through Micro-constrictions

    NASA Astrophysics Data System (ADS)

    Shaban, F.; Ashari, M.; Lorenz, T.; Rau, R.; Scheer, E.; Kono, K.; Rees, D. G.; Leiderer, P.

    2016-06-01

    We present transport measurements of surface-state electrons on liquid helium films in confined geometry. The measurements are taken using split-gate devices similar to a field effect transistor. The number of electrons passing between the source and drain areas of the device can be precisely controlled by changing the length of the voltage pulse applied to the gate electrode. We find evidence that the effective driving potential depends on electron-electron interactions, as well as the electric field applied to the substrate. Our measurements indicate that the mobility of electrons on helium films can be high and that microfabricated transistor devices allow electron manipulation on length scales close to the interelectron separation. Our experiment is an important step toward investigations of surface-state electron properties at much higher densities, for which the quantum melting of the system to a degenerate Fermi gas should be observed.

  2. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    SciTech Connect

    Gedda, Murali; Obaidulla, Sk. Md.; Subbarao, Nimmakayala V. V.; Goswami, Dipak K.

    2013-11-15

    Polyvinyl alcohol (PVA) and anodized Al{sub 2}O{sub 3} layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO{sub 2} surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μ{sub EF}) value of 1.11 cm{sup 2}/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  3. Four allotropes of semiconducting layered arsenic that switch into a topological insulator via an electric field: Computational study

    NASA Astrophysics Data System (ADS)

    Mardanya, Sougata; Thakur, Vinay Kumar; Bhowmick, Somnath; Agarwal, Amit

    2016-07-01

    We propose four different thermodynamically stable structural phases of arsenic monolayers based on ab initio density functional theory calculations, all of which undergo a topological phase transition on application of a perpendicular electric field. All four arsenic monolayer allotropes have a wide band gap, varying from 1.21 to 3.0 eV (based on GW calculations), and in general they undergo a metal-insulator quantum phase transition on application of uniaxial in-layer strain. Additionally, an increasing transverse electric field induces band inversion at the Γ point in all four monolayer allotropes, leading to a nontrivial topological phase (insulating for three allotropes and metallic for one allotrope), characterized by the switching of the Z2 index from 0 (before band inversion) to 1 (after band inversion). The topological phase tuned by the transverse electric field should support spin-separated gapless edge states which should manifest in the quantum spin Hall effect.

  4. Tracing the interwell plasmon in a grid-gated double-quantum-well field-effect transistor

    NASA Astrophysics Data System (ADS)

    Popov, Vyacheslav V.; Teperik, Tatiana V.; Zayko, Yuriy N.; Horing, Norman J. M.; Fateev, Denis V.

    2005-06-01

    The terahertz (THz) absorption spectra of plasmon modes in a grid-gated double-quantum-well (DQW) field-effect transistor (FET) structute is analyzed theoretically and numerically using the scattering matrix approach and is shown to faithfully reproduce strong resonant features of recent experimental observations of THz photoconductivity in such a structure. No traces ofthe interwell plasmon is found in THz absorption spectra.

  5. Real-time implementation of frequency-modulated continuous-wave synthetic aperture radar imaging using field programmable gate array.

    PubMed

    Quan, Yinghui; Li, Yachao; Hu, Guibin; Xing, Mengdao

    2015-06-01

    A new miniature linear frequency-modulated continuous-wave radar which mounted on an unmanned aerial vehicle is presented. It allows the accomplishment of high resolution synthetic aperture radar imaging in real-time. Only a Kintex-7 field programmable gate array from Xilinx is utilized for whole signal processing of sophisticated radar imaging algorithms. The proposed hardware architecture achieves remarkable improvement in integration, power consumption, volume, and computing performance over its predecessor designs. The realized design is verified by flight campaigns.

  6. Field study of moisture damage in walls insulated without a vapor barrier. Final report for the Oregon Department of Energy

    SciTech Connect

    Tsongas, G.A.

    1980-05-01

    Considerable uncertainty has existed over whether or not wall insulation installed without a vapor barrier causes an increased risk of moisture damage (wood decay) within walls. This report describes the results of one of the first major studies in the country aimed at finding out if such a moisture problem really exists. The exterior walls of a total of 96 homes in Portland, Oregon were opened, of which 70 had retrofitted insulation and 26 were uninsulated and were a control group. The types of insulation included urea-formaldehyde foam (44), mineral wool (16), and cellulose (10). In each opened wall cavity the moisture content of wood was measured and insulation and wood samples were taken for laboratory analysis of moisture content and for the determination of the presence of absence of decay fungi. Foam shrinkage was also measured. To evaluate the possible influence of the relative air tightness of the homes, fan depressurization tests were run using a door blower unit. The field and laboratory test results indicating the lack of a moisture damage problem in existing homes with wood siding in climates similar to that of western Oregon are described along with results of a statistical analysis of the data. Related problems of interest to homeowners and insulation installers are noted. The standard operating procedures used throughout the study are discussed, including the home selection process, quantitative and qualitative techniques used to identify wall locations with the highest moisture content, wall opening and data/sample collection methodology, laboratory analysis of samples, data processing and analysis, and applicability of the results. Recommendations for furutre tests are made. Finally, the potential and desirability for future retrofitting of wall insulation is explored.

  7. Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates.

    PubMed

    Ma, Chunrui; Gong, Youpin; Lu, Rongtao; Brown, Emery; Ma, Beihai; Li, Jun; Wu, Judy

    2015-11-28

    A transition in source-drain current vs. back gate voltage (ID-VBG) characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin films has been observed on graphene field-effect transistors on Pb0.92La0.08Zr0.52Ti0.48O3 gates (GFET/PLZT-Gate) during a vacuum annealing process developed to systematically remove the polar molecules adsorbed on the GFET channel surface. This allows the extrinsic and intrinsic hysteresis on GFET/PLZT-gate devices to detangle and the detection of the dynamic switch of electric dipoles using GFETs, taking advantage of their high gating efficiency on ferroelectric gate. A model of the charge trapping and pinning mechanism is proposed to successfully explain the transition. In response to pulsed VBG trains of positive, negative, as well as alternating polarities, respectively, the source-drain current ID variation is instantaneous with the response amplitude following the ID-VBG loops measured by DC VBG with consideration of the remnant polarization after a given VBG pulse when the gate electric field exceeds the coercive field of the PLZT. A detection sensitivity of around 212 dipole per μm(2) has been demonstrated at room temperature, suggesting the GFET/ferroelectric-gate devices provide a promising high-sensitivity scheme for uncooled detection of electrical dipole dynamic switch.

  8. 2006/07 Field Testing of Cellulose Fiber Insulation Enhanced with Phase Change Material

    SciTech Connect

    Kosny, Jan; Yarbrough, David W; Miller, William A; Petrie, Thomas; Childs, Phillip W; Syed, Azam M

    2008-12-01

    Most recent improvements in building envelope technologies suggest that in the near future, residences will be routinely constructed to operate with very low heating and cooling loads. In that light, the application of novel building materials containing active thermal components (e.g., phase change materials [PCMs,] sub-venting, radiant barriers, and integrated hydronic systems) is like a final step in achieving relatively significant heating and cooling energy savings from technological improvements in the building envelope. It is expected that optimized building envelope designs using PCMs for energy storage can effectively bring notable savings in energy consumption and reductions in peak hour power loads. During 2006/07, a research team at Oak Ridge National Laboratory (ORNL) performed a series of laboratory and field tests of several wall and roof assemblies using PCM-enhanced cellulose insulation. This report summarizes the test results from the perspective of energy performance. The ORNL team is working on both inorganic and organic PCMs; this report discusses only paraffinic PCMs. A limited economical analysis also is presented. PCMs have been tested as a thermal mass component in buildings for at least 40 years. Most of the research studies found that PCMs enhanced building energy performance. In the case of the application of organic PCMs, problems such as high initial cost and PCM leaking (surface sweating) have hampered widespread adoption. Paraffinic hydrocarbon PCMs generally performed well, with the exception that they increased the flammability of the building envelope.

  9. Zero field conductance singularity in two terminal ferromagnet-topological insulator device

    NASA Astrophysics Data System (ADS)

    Duan, Xiaopeng; Semenov, Yuriy G.; Kim, Ki Wook

    2014-03-01

    Spin-momentum interlocking of surface electronic states on 3D topological insulator (TI) grants the unique opportunity to generate electric current directed according to the spin polarization of injected electrons instead of the applied electric field. Such asymmetry in momentum distribution of injected electrons takes place in the vicinity of ferromagnetic contact but vanishes on the length of few mean free passes. We propose to use this property in two terminal devices consisting of two parallel ferromagnetic contacts deposited on the surface of 3D TI. When the injected spin polarization leads to electron momentum pointing towards the other electrode, it facilitate the direct transmission, resulting in a lower resistance; in contrast with a reversed bias, the spin-determined momentum points away from the other electrode, because of which the electrons could gain the right momentum only after multiple scatterings to approach the second electrode, thus resulting in a higher resistance. We stress that this asymmetry in the resistance keeps up to arbitrarily small applied voltage since it does not need the formation of space charge region that is essential in conventional diodes. The rectification ratio near zero voltage are estimated and potential application are discussed. This work was supported, in part, by the US Army Research Office and FAME (one of six centers of STARnet, a SRC program sponsored by MARCO and DARPA).

  10. Analytical Model for Direct Tunneling Gate Current in Long-Channel Undoped Cylindrical Surrounding Gate Metal-Oxide-Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Han, Ru; Li, Cong

    2013-02-01

    In this study, an analytical direct tunneling gate current model for long-channel undoped cylindrical surrounding gate (CSG) MOSFETs is developed. On the basis of an analytical model, the direct tunneling gate current in CSG MOSFETs is investigated. It is found that direct tunneling gate current is a strong function of gate oxide thickness, but less affected by the change in channel radius. It is also revealed that considering the influence of the source and drain, as the length of the underlap region decreases to zero, the direct tunneling gate current drastically increases. The accuracy of the analytical model is verified by the good agreement of its results with those obtained by the three-dimensional numerical device simulator ISE.

  11. Monte Carlo Simulation of a 6 MV X-Ray Beam for Open and Wedge Radiation Fields, Using GATE Code.

    PubMed

    Bahreyni-Toosi, Mohammad-Taghi; Nasseri, Shahrokh; Momennezhad, Mahdi; Hasanabadi, Fatemeh; Gholamhosseinian, Hamid

    2014-10-01

    The aim of this study is to provide a control software system, based on Monte Carlo simulation, and calculations of dosimetric parameters of standard and wedge radiation fields, using a Monte Carlo method. GATE version 6.1 (OpenGATE Collaboration), was used to simulate a compact 6 MV linear accelerator system. In order to accelerate the calculations, the phase-space technique and cluster computing (Condor version 7.2.4, Condor Team, University of Wisconsin-Madison) were used. Dosimetric parameters used in treatment planning systems for the standard and wedge radiation fields (10 cm × 10 cm to 30 cm × 30 cm and a 60° wedge), including the percentage depth dose and dose profiles, were measured by both computational and experimental methods. Gamma index was applied to compare calculated and measured results with 3%/3 mm criteria. Gamma index was applied to compare calculated and measured results. Almost all calculated data points have satisfied gamma index criteria of 3% to 3 mm. Based on the good agreement between calculated and measured results obtained for various radiation fields in this study, GATE may be used as a useful tool for quality control or pretreatment verification procedures in radiotherapy.

  12. Monte Carlo Simulation of a 6 MV X-Ray Beam for Open and Wedge Radiation Fields, Using GATE Code

    PubMed Central

    Bahreyni-Toosi, Mohammad-Taghi; Nasseri, Shahrokh; Momennezhad, Mahdi; Hasanabadi, Fatemeh; Gholamhosseinian, Hamid

    2014-01-01

    The aim of this study is to provide a control software system, based on Monte Carlo simulation, and calculations of dosimetric parameters of standard and wedge radiation fields, using a Monte Carlo method. GATE version 6.1 (OpenGATE Collaboration), was used to simulate a compact 6 MV linear accelerator system. In order to accelerate the calculations, the phase-space technique and cluster computing (Condor version 7.2.4, Condor Team, University of Wisconsin–Madison) were used. Dosimetric parameters used in treatment planning systems for the standard and wedge radiation fields (10 cm × 10 cm to 30 cm × 30 cm and a 60° wedge), including the percentage depth dose and dose profiles, were measured by both computational and experimental methods. Gamma index was applied to compare calculated and measured results with 3%/3 mm criteria. Gamma index was applied to compare calculated and measured results. Almost all calculated data points have satisfied gamma index criteria of 3% to 3 mm. Based on the good agreement between calculated and measured results obtained for various radiation fields in this study, GATE may be used as a useful tool for quality control or pretreatment verification procedures in radiotherapy. PMID:25426430

  13. Monte Carlo Simulation of a 6 MV X-Ray Beam for Open and Wedge Radiation Fields, Using GATE Code.

    PubMed

    Bahreyni-Toosi, Mohammad-Taghi; Nasseri, Shahrokh; Momennezhad, Mahdi; Hasanabadi, Fatemeh; Gholamhosseinian, Hamid

    2014-10-01

    The aim of this study is to provide a control software system, based on Monte Carlo simulation, and calculations of dosimetric parameters of standard and wedge radiation fields, using a Monte Carlo method. GATE version 6.1 (OpenGATE Collaboration), was used to simulate a compact 6 MV linear accelerator system. In order to accelerate the calculations, the phase-space technique and cluster computing (Condor version 7.2.4, Condor Team, University of Wisconsin-Madison) were used. Dosimetric parameters used in treatment planning systems for the standard and wedge radiation fields (10 cm × 10 cm to 30 cm × 30 cm and a 60° wedge), including the percentage depth dose and dose profiles, were measured by both computational and experimental methods. Gamma index was applied to compare calculated and measured results with 3%/3 mm criteria. Gamma index was applied to compare calculated and measured results. Almost all calculated data points have satisfied gamma index criteria of 3% to 3 mm. Based on the good agreement between calculated and measured results obtained for various radiation fields in this study, GATE may be used as a useful tool for quality control or pretreatment verification procedures in radiotherapy. PMID:25426430

  14. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

    SciTech Connect

    Capriotti, M. E-mail: dionyz.pogany@tuwien.ac.at; Fleury, C.; Oposich, M.; Bethge, O.; Strasser, G.; Pogany, D. E-mail: dionyz.pogany@tuwien.ac.at; Lagger, P.; Ostermaier, C.

    2015-01-14

    We provide theoretical and simulation analysis of the small signal response of SiO{sub 2}/AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO{sub 2} interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, C{sub p}, and conductance, G{sub p}. C{sub p} -voltage and G{sub p} -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance R{sub br} and the effective channel resistance. In particular, in the spill-over region, the drop of C{sub p} with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of R{sub br} with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, D{sub it}, from the G{sub p}/ω vs. angular frequency ω curves. A peak in G{sub p}/ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the G{sub p}/ω vs. ω peak saturates at high D{sub it}, which can lead to underestimation of D{sub it}. Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage.

  15. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

    NASA Astrophysics Data System (ADS)

    Capriotti, M.; Lagger, P.; Fleury, C.; Oposich, M.; Bethge, O.; Ostermaier, C.; Strasser, G.; Pogany, D.

    2015-01-01

    We provide theoretical and simulation analysis of the small signal response of SiO2/AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO2 interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, Cp, and conductance, Gp. Cp -voltage and Gp -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance Rbr and the effective channel resistance. In particular, in the spill-over region, the drop of Cp with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of Rbr with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, Dit, from the Gp/ω vs. angular frequency ω curves. A peak in Gp/ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the Gp/ω vs. ω peak saturates at high Dit, which can lead to underestimation of Dit. Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage.

  16. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques

    PubMed Central

    2014-01-01

    The simple self-aligned photolithography technique and laser interference photolithography technique were proposed and utilized to fabricate multiple-gate ZnO metal-oxide-semiconductor field-effect transistors (MOSFETs). Since the multiple-gate structure could improve the electrical field distribution along the ZnO channel, the performance of the ZnO MOSFETs could be enhanced. The performance of the multiple-gate ZnO MOSFETs was better than that of the conventional single-gate ZnO MOSFETs. The higher the drain-source saturation current (12.41 mA/mm), the higher the transconductance (5.35 mS/mm) and the lower the anomalous off-current (5.7 μA/mm) for the multiple-gate ZnO MOSFETs were obtained. PMID:24948884

  17. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques.

    PubMed

    Lee, Hsin-Ying; Huang, Hung-Lin; Tseng, Chun-Yen

    2014-01-01

    The simple self-aligned photolithography technique and laser interference photolithography technique were proposed and utilized to fabricate multiple-gate ZnO metal-oxide-semiconductor field-effect transistors (MOSFETs). Since the multiple-gate structure could improve the electrical field distribution along the ZnO channel, the performance of the ZnO MOSFETs could be enhanced. The performance of the multiple-gate ZnO MOSFETs was better than that of the conventional single-gate ZnO MOSFETs. The higher the drain-source saturation current (12.41 mA/mm), the higher the transconductance (5.35 mS/mm) and the lower the anomalous off-current (5.7 μA/mm) for the multiple-gate ZnO MOSFETs were obtained.

  18. A time digitizer for space instrumentation using a field programmable gate array

    NASA Astrophysics Data System (ADS)

    Rogacki, S.; Zurbuchen, T. H.

    2013-08-01

    Space instruments such as time-of-flight (TOF) mass spectrometers and altimeters rely on time-to-digital converters (TDCs) to measure accurately times in the picosecond to microsecond range. Time-to-digital conversion is often implemented with analog circuitry or more recently with custom ASIC (Application Specific Integrated Circuit) devices. The analog approach may be costly in terms of circuit board area and parts count, while ASIC development is risky and costly when system requirements may change. Here, we present a highly flexible, accurate, and low-cost field-programmable gate array (FPGA) implementation of such TDC functionality. Compared with other technologies, this method reduces the parts count in TOF-supporting circuits and provides design flexibility in TOF instrumentation, especially for use in space or for applications with a number of sensors too small to warrant the development of a dedicated ASIC. Our technique can accommodate one or more STOP pulse measurements for each START pulse as signal reference, effectively providing measurements of multiple times-of-flight with the same start trigger. Alternatively, all pulse event edges can receive an absolute time stamp, enabling a broad set of new sensor applications. This novel design is based on the construction of a delay-line internal to the FPGA. Propagation variations due to temperature and supply voltage, which typically limit FPGA-based timing designs, are automatically compensated, allowing active signal processing 100% of the time. A methodology for the characterization of internal delay-line timing and nonlinearity has also been developed and is not specific to a particular FPGA architecture. We describe the design of this FPGA-based TDC and also describe detailed tests with a Xilinx XC2V1000. For single non-repetitive events, this design achieves 60 ps accuracy (standard deviation of error); a simplified implementation is suitable for non-reprogrammable FPGAs.

  19. Enzyme-modified electrolyte-gated organic field-effect transistors

    NASA Astrophysics Data System (ADS)

    Buth, Felix; Donner, Andreas; Stutzmann, Martin; Garrido, Jose A.

    2012-10-01

    Organic solution-gated field-effect transistors (SGFETs) can be operated at low voltages in aqueous environments, paving the way to the use of organic semiconductors in bio-sensing applications. However, it has been shown that these devices exhibit only a rather weak sensitivity to standard electrolyte parameters such as pH and ionic strength. In order to increase the sensitivity and to add specificity towards a given analyte, the covalent attachment of functional groups and enzymes to the device surface would be desirable. In this contribution we demonstrate that enzyme modified organic SGFETs can be used for the in-situ detection of penicillin in the low μM regime. In a first step, silane molecules with amine terminal groups are grafted to α-sexithiophene-based thin film transistors. Surface characterization techniques like X-ray photoemission confirm the modification of the surface with these functional groups, which are stable in standard aqueous electrolytes. We show that the presence of surface-bound amphoteric groups (e.g. amino or carboxylic moieties) increases the pH-sensitivity of the organic SGFETs. In addition, these groups serve as anchoring sites for the attachment of the enzyme penicillinase. The resulting enzyme-FETs are used for the detection of penicillin, enabling the study of the influence of the buffer strength and the pH of the electrolyte on the enzyme kinetics. The functionalization of the organic FETs shown here can be extended to a large variety of enzymes, allowing the specific detection of different chemical and biochemical analytes.

  20. Optical multi-token-ring networking using smart pixels with field programmable gate arrays (FPGAs)

    NASA Astrophysics Data System (ADS)

    Zhang, Liping; Hong, Sunkwang; Min, Changki; Alpaslan, Zahir Y.; Sawchuk, Alexander A.

    2001-12-01

    This research explores architectures and design principles for monolithic optoelectronic integrated circuits (OEICs) through the implementation of an optical multi-token-ring network testbed system. Monolithic smart pixel CMOS OEICs are of paramount importance to high performance networks, communication switches, computer interfaces, and parallel signal processing for demanding future multimedia applications. The general testbed system is called Reconfigurable Translucent Smart Pixel Array (R-Transpar) and includes a field programmable gate array (FPGA), a transimpedance receiver array, and an optoelectronic very large-scale integrated (OE-VLSI) smart pixel array. The FPGA is an Altera FLEX10K100E chip that performs logic functions and receives inputs from the transimpedance receiver array. A monolithic (OE-VLSI) smart pixel device containing an array of 4 X 4 vertical-cavity surface-emitting lasers (VCSELs) spatially interlaced with an array of 4 X 4 metal- semiconductor-metal (MSM) detectors connects to these devices and performs optical input-output functions. These components are mounted on a printed circuit board for testing and evaluation of integrated monolithic OEIC designs and various optical interconnection techniques. The system moves information between nodes by transferring 3-D optical packets in free space or through fiber image guides. The R-Transpar system is reconfigurable to test different network protocols and signal processing functions. In its operation as a 3-D multi-token-ring network, we use a specific version of the system called Transpar-Token-Ring (Transpar-TR) that uses novel time-division multiplexed (TDM) network node addressing to enhance channel utilization and throughput. Host computers interface with the system via a high-speed digital I/O board that sends commands for networking and application algorithm operations. We describe the system operation and experimental results in detail.

  1. Use of Field Programmable Gate Array Technology in Future Space Avionics

    NASA Technical Reports Server (NTRS)

    Ferguson, Roscoe C.; Tate, Robert

    2005-01-01

    Fulfilling NASA's new vision for space exploration requires the development of sustainable, flexible and fault tolerant spacecraft control systems. The traditional development paradigm consists of the purchase or fabrication of hardware boards with fixed processor and/or Digital Signal Processing (DSP) components interconnected via a standardized bus system. This is followed by the purchase and/or development of software. This paradigm has several disadvantages for the development of systems to support NASA's new vision. Building a system to be fault tolerant increases the complexity and decreases the performance of included software. Standard bus design and conventional implementation produces natural bottlenecks. Configuring hardware components in systems containing common processors and DSPs is difficult initially and expensive or impossible to change later. The existence of Hardware Description Languages (HDLs), the recent increase in performance, density and radiation tolerance of Field Programmable Gate Arrays (FPGAs), and Intellectual Property (IP) Cores provides the technology for reprogrammable Systems on a Chip (SOC). This technology supports a paradigm better suited for NASA's vision. Hardware and software production are melded for more effective development; they can both evolve together over time. Designers incorporating this technology into future avionics can benefit from its flexibility. Systems can be designed with improved fault isolation and tolerance using hardware instead of software. Also, these designs can be protected from obsolescence problems where maintenance is compromised via component and vendor availability.To investigate the flexibility of this technology, the core of the Central Processing Unit and Input/Output Processor of the Space Shuttle AP101S Computer were prototyped in Verilog HDL and synthesized into an Altera Stratix FPGA.

  2. The Use of Field Programmable Gate Arrays (FPGA) in Small Satellite Communication Systems

    NASA Technical Reports Server (NTRS)

    Varnavas, Kosta; Sims, William Herbert; Casas, Joseph

    2015-01-01

    This paper will describe the use of digital Field Programmable Gate Arrays (FPGA) to contribute to advancing the state-of-the-art in software defined radio (SDR) transponder design for the emerging SmallSat and CubeSat industry and to provide advances for NASA as described in the TAO5 Communication and Navigation Roadmap (Ref 4). The use of software defined radios (SDR) has been around for a long time. A typical implementation of the SDR is to use a processor and write software to implement all the functions of filtering, carrier recovery, error correction, framing etc. Even with modern high speed and low power digital signal processors, high speed memories, and efficient coding, the compute intensive nature of digital filters, error correcting and other algorithms is too much for modern processors to get efficient use of the available bandwidth to the ground. By using FPGAs, these compute intensive tasks can be done in parallel, pipelined fashion and more efficiently use every clock cycle to significantly increase throughput while maintaining low power. These methods will implement digital radios with significant data rates in the X and Ka bands. Using these state-of-the-art technologies, unprecedented uplink and downlink capabilities can be achieved in a 1/2 U sized telemetry system. Additionally, modern FPGAs have embedded processing systems, such as ARM cores, integrated inside the FPGA allowing mundane tasks such as parameter commanding to occur easily and flexibly. Potential partners include other NASA centers, industry and the DOD. These assets are associated with small satellite demonstration flights, LEO and deep space applications. MSFC currently has an SDR transponder test-bed using Hardware-in-the-Loop techniques to evaluate and improve SDR technologies.

  3. Development and modeling of a stereo vision focusing system for a field programmable gate array robot

    NASA Astrophysics Data System (ADS)

    Tickle, Andrew J.; Buckle, James; Grindley, Josef E.; Smith, Jeremy S.

    2010-10-01

    Stereo vision is a situation where an imaging system has two or more cameras in order to make it more robust by mimicking the human vision system. By using two inputs, knowledge of their own relative geometry can be exploited to derive depth information from the two views they receive. 3D co-ordinates of an object in an observed scene can be computed from the intersection of the two sets of rays. Presented here is the development of a stereo vision system to focus on an object at the centre of a baseline between two cameras at varying distances. This has been developed primarily for use on a Field Programmable Gate Array (FPGA) but an adaptation of this developed methodology is also presented for use with a PUMA 560 Robotic Manipulator with a single camera attachment. The two main vision systems considered here are a fixed baseline with an object moving at varying distances from this baseline, and a system with a fixed distance and a varying baseline. These two differing situations provide enough data so that the co-efficient variables that determine the system operation can be calibrated automatically with only the baseline value needing to be entered, the system performs all the required calculations for the user for use with a baseline of any distance. The limits of system with regards to the focusing accuracy obtained are also presented along with how the PUMA 560 controls its joints for the stereo vision and how it moves from one position to another to attend stereo vision compared to the two camera system for the FPGA. The benefits of such a system for range finding in mobile robotics are discussed and how this approach is more advantageous when compared against laser range finders or echolocation using ultrasonics.

  4. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Jae-Gil; Kim, Hyun-Seop; Seo, Kwang-Seok; Cho, Chun-Hyung; Cha, Ho-Young

    2016-08-01

    A high quality SiO2 deposition process using a plasma enhanced chemical vapor deposition system has been developed for the gate insulator process of normally-off recessed-gate AlGaN/GaN metal-oxide-semiconductor-heterostructure field-effect transistors (MOS-HFETs). SiO2 films were deposited by using SiH4 and N2O mixtures as reactant gases. The breakdown field increased with increasing the N2O flow rate. The optimum SiH4/N2O ratio was 0.05, which resulted in a maximum breakdown field of 11 MV/cm for the SiO2 film deposited on recessed GaN surface. The deposition conditions were optimized as follows; a gas flow rate of SiH4/N2O (=27/540 sccm), a source RF power of 100 W, a pressure of 2 Torr, and a deposition temperature of 350 °C. A fabricated normally-off MOS-HFET exhibited a threshold voltage of 3.2 V, a specific on-resistance of 4.46 mΩ cm2, and a breakdown voltage of 810 V.

  5. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Jae-Gil; Kim, Hyun-Seop; Seo, Kwang-Seok; Cho, Chun-Hyung; Cha, Ho-Young

    2016-08-01

    A high quality SiO2 deposition process using a plasma enhanced chemical vapor deposition system has been developed for the gate insulator process of normally-off recessed-gate AlGaN/GaN metal-oxide-semiconductor-heterostructure field-effect transistors (MOS-HFETs). SiO2 films were deposited by using SiH4 and N2O mixtures as reactant gases. The breakdown field increased with increasing the N2O flow rate. The optimum SiH4/N2O ratio was 0.05, which resulted in a maximum breakdown field of 11 MV/cm for the SiO2 film deposited on recessed GaN surface. The deposition conditions were optimized as follows; a gas flow rate of SiH4/N2O (=27/540 sccm), a source RF power of 100 W, a pressure of 2 Torr, and a deposition temperature of 350 °C. A fabricated normally-off MOS-HFET exhibited a threshold voltage of 3.2 V, a specific on-resistance of 4.46 mΩ cm2, and a breakdown voltage of 810 V.

  6. Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor

    NASA Astrophysics Data System (ADS)

    Yan, Shaoan; Li, Gang; Guo, Hongxia; Zhao, Wen; Xiong, Ying; Tang, Minghua; Li, Zheng; Xiao, Yongguang; Zhang, Wanli; Lei, Zhifeng

    2016-04-01

    A theoretical model is developed to investigate the ionizing radiation effect on electrical characteristics of a metal-ferroelectric-insulator-semiconductor structure ferroelectric gate field-effect transistor (MFIS FeFET). Modeling results show that gate capacitance versus gate voltage curves and transfer characteristic curves shift significantly and the memory window becomes worse with the total dose. Moreover, the drain current and I ON/I OFF ratio exhibit a considerable decrease under high incident dose rates. Finally, it is found that radiation-induced degradations can be affected strongly by the insulator layer thickness, and that MFIS FeFETs with a thin insulator buffer layer show a high radiation tolerance.

  7. Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate

    NASA Astrophysics Data System (ADS)

    Dragoman, Mircea; Dinescu, Adrian; Dragoman, Daniela

    2016-06-01

    We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gates, with lengths of about 30 nm and separated by a distance of about 40 nm, are tilted at 45° with respect to the source and drain electrodes, which are distanced at 190 nm. Electric measurements reveal specific properties of ballistic carrier transport, i.e., nonlinear drain voltage-drain current dependences with saturation regions and negative differential resistance at certain bias voltages. Tens of ballistic transistors with very large transconductances were fabricated on a chip cut from a 4 in. graphene wafer. Such double-gate transistor configurations can be used also as extremely efficient, state-of-the-art photodetectors.

  8. Comparison of Focused and Near-Field Imaging of Spray on Foam Insulation (SOFI) at Millimeter Wave Frequencies

    NASA Technical Reports Server (NTRS)

    Kharkovshy, S.; Zoughi, R.; Hepburn, F. L.

    2007-01-01

    Millimeter wave imaging techniques can provide high spatial-resolution images of various composites. Lens antennas may be incorporated into the imaging system to provide a small incident beam footprint. Another approach may involve the use of horn antennas, which if operating in their near-fields, images with reasonably high spatial-resolutions may also be obtained. This paper gives a comparison between such near-field and focused far-field imaging of the Space Shuttle Spray on Foam Insulation (SOFI) used in its external fuel tank at millimeter wave frequencies. Small horn antennas and lens antennas with relatively long depth of focus were used in this investigation.

  9. Role of the resistivity of insulating field emitters on the energy of field-ionised and field-evaporated atoms.

    PubMed

    Arnoldi, L; Silaeva, E P; Vurpillot, F; Deconihout, B; Cadel, E; Blum, I; Vella, A

    2015-12-01

    In order to improve the accuracy of laser atom probe analyses, it is important to understand all the physical processes induced by the combination of the high electrical field and the femtosecond laser beam during field evaporation. New information can be accessed from the energy of evaporated surface atoms or field-ionised atoms of an imaging gas. In order to study the ions energy, we combine La-APT and FIM analyses in a new experimental setup equipped with electrostatic lenses. We report measurements for semiconductors and oxides and we study the influence of the illumination conditions (laser power and wavelength), the evaporation rate, the sample geometry and the tip preparation processes. The results are discussed taking into account the resistive properties of non-metallic samples and the photo-stimulated conductivity. This work clarifies the role of the laser and DC field in the energy deficit of field evaporated ions. PMID:25484362

  10. Comparison of Focused and Near-Field Imaging of Spray on Foam Insulation (SOFI) at Millimeter Wave Frequencies

    NASA Technical Reports Server (NTRS)

    Kharkovsky, S.; Zoughi, R.; Hepburn, F. L.

    2007-01-01

    The Space Shuttle Columbia's catastrophic accident was due to a piece of Spray on Foam Insulation (SOFI) that broke off from the external tank and damaged the leading edge of the orbiter's left wing. Millimeter wave focused and near-field imaging methods have been suessfully used for inspecting of the SOFI samples. Comparison between these methods for the purpose of detection and evaluation of flaws in the SOFI is provided using examples of images of SOFI samples.

  11. Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection

    SciTech Connect

    Ahn, Jae-Hyuk; Yun, Jeonghoon; Park, Inkyu; Choi, Yang-Kyu

    2014-01-06

    A silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H{sub 2}) detection. The SiNW FETs are fabricated by top-down method and functionalized with palladium nanoparticles (PdNPs) through electron beam evaporation for H{sub 2} detection. The drain current of the PdNP-decorated device reversibly responds to H{sub 2} at different concentrations. The local side-gates allow individual addressing of each sensor and enhance the sensitivity by adjusting the working region to the subthreshold regime. A control experiment using a non-functionalized device verifies that the hydrogen-sensitivity is originated from the PdNPs functionalized on the SiNW surface.

  12. A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

    SciTech Connect

    Cho, Edward Namkyu; Shin, Yong Hyeon; Yun, Ilgu

    2014-11-07

    A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔV{sub TH}{sup QM}) and the gate capacitance (C{sub g}) degradation. First of all, ΔV{sub TH}{sup QM} induced by quantum mechanical (QM) effects is modeled. The C{sub g} degradation is then modeled by introducing the inversion layer centroid. With ΔV{sub TH}{sup QM} and the C{sub g} degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulation results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.

  13. Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

    NASA Astrophysics Data System (ADS)

    Besleaga, C.; Stan, G. E.; Pintilie, I.; Barquinha, P.; Fortunato, E.; Martins, R.

    2016-08-01

    The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium-gallium-zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium-gallium-zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

  14. Gas sensors characterization and multilayer perceptron (MLP) hardware implementation for gas identification using a Field Programmable Gate Array (FPGA).

    PubMed

    Benrekia, Fayçal; Attari, Mokhtar; Bouhedda, Mounir

    2013-01-01

    This paper develops a primitive gas recognition system for discriminating between industrial gas species. The system under investigation consists of an array of eight micro-hotplate-based SnO2 thin film gas sensors with different selectivity patterns. The output signals are processed through a signal conditioning and analyzing system. These signals feed a decision-making classifier, which is obtained via a Field Programmable Gate Array (FPGA) with Very High-Speed Integrated Circuit Hardware Description Language. The classifier relies on a multilayer neural network based on a back propagation algorithm with one hidden layer of four neurons and eight neurons at the input and five neurons at the output. The neural network designed after implementation consists of twenty thousand gates. The achieved experimental results seem to show the effectiveness of the proposed classifier, which can discriminate between five industrial gases. PMID:23529119

  15. Gas Sensors Characterization and Multilayer Perceptron (MLP) Hardware Implementation for Gas Identification Using a Field Programmable Gate Array (FPGA)

    PubMed Central

    Benrekia, Fayçal; Attari, Mokhtar; Bouhedda, Mounir

    2013-01-01

    This paper develops a primitive gas recognition system for discriminating between industrial gas species. The system under investigation consists of an array of eight micro-hotplate-based SnO2 thin film gas sensors with different selectivity patterns. The output signals are processed through a signal conditioning and analyzing system. These signals feed a decision-making classifier, which is obtained via a Field Programmable Gate Array (FPGA) with Very High-Speed Integrated Circuit Hardware Description Language. The classifier relies on a multilayer neural network based on a back propagation algorithm with one hidden layer of four neurons and eight neurons at the input and five neurons at the output. The neural network designed after implementation consists of twenty thousand gates. The achieved experimental results seem to show the effectiveness of the proposed classifier, which can discriminate between five industrial gases. PMID:23529119

  16. Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

    NASA Astrophysics Data System (ADS)

    Zhang, Zhili; Qin, Shuangjiao; Fu, Kai; Yu, Guohao; Li, Weiyi; Zhang, Xiaodong; Sun, Shichuang; Song, Liang; Li, Shuiming; Hao, Ronghui; Fan, Yaming; Sun, Qian; Pan, Gebo; Cai, Yong; Zhang, Baoshun

    2016-08-01

    We characterized an ionic liquid (1-butyl-3-methylimidazolium nitrate, C8H15N3O3) as a photo-electrochemical etchant for fabricating normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Using the ionic liquid, we achieved an etching rate of ˜2.9 nm/min, which is sufficiently low to facilitate good etching control. The normally-off AlGaN/GaN MIS-HEMT was fabricated with an etching time of 6 min, with the 20 nm low-pressure chemical vapor deposition (LPCVD) silicon nitride (Si3N4) gate dielectric exhibiting a threshold voltage shift from -10 to 1.2 V, a maximum drain current of more than 426 mA/mm, and a breakdown voltage of 582 V.

  17. High-field Overhauser dynamic nuclear polarization in silicon below the metal-insulator transition.

    PubMed

    Dementyev, Anatoly E; Cory, David G; Ramanathan, Chandrasekhar

    2011-04-21

    Single crystal silicon is an excellent system to explore dynamic nuclear polarization (DNP), as it exhibits a continuum of properties from metallic to insulating as a function of doping concentration and temperature. At low doping concentrations DNP has been observed to occur via the solid effect, while at very high-doping concentrations an Overhauser mechanism is responsible. Here we report the hyperpolarization of (29)Si in n-doped silicon crystals, with doping concentrations in the range of (1-3) × 10(17) cm(-3). In this regime exchange interactions between donors become extremely important. The sign of the enhancement in our experiments and its frequency dependence suggest that the (29)Si spins are directly polarized by donor electrons via an Overhauser mechanism within exchange-coupled donor clusters. The exchange interaction between donors only needs to be larger than the silicon hyperfine interaction (typically much smaller than the donor hyperfine coupling) to enable this Overhauser mechanism. Nuclear polarization enhancement is observed for a range of donor clusters in which the exchange energy is comparable to the donor hyperfine interaction. The DNP dynamics are characterized by a single exponential time constant that depends on the microwave power, indicating that the Overhauser mechanism is a rate-limiting step. Since only about 2% of the silicon nuclei are located within 1 Bohr radius of the donor electron, nuclear spin diffusion is important in transferring the polarization to all the spins. However, the spin-diffusion time is much shorter than the Overhauser time due to the relatively weak silicon hyperfine coupling strength. In a 2.35 T magnetic field at 1.1 K, we observed a DNP enhancement of 244 ± 84 resulting in a silicon polarization of 10.4 ± 3.4% following 2 h of microwave irradiation.

  18. Buckley Prize Talk: Bosons on the Boundaries: The magnetic field driven superconductor-insulator quantum phase transition

    NASA Astrophysics Data System (ADS)

    Hebard, Arthur

    2015-03-01

    Experiments probing the competition between superconductivity and disorder in two-dimensional (2D) thin-film systems have provided fascinating glimpses into the physics of superconductor-insulator (S-I) quantum phase transitions (QPTs). This talk will address the use of externally applied magnetic fields to tune through the S-I transition of amorphous composite indium oxide (α-InOx) thin films prepared at different stages of disorder. Air-stable α-InOx films are particularly advantageous for these studies: the disorder parameter as measured by the sheet resistance can be reproducibly controlled during deposition and the films are uniformly homogeneous out to macroscopic length scales. Temperature-dependent resistance and current-voltage measurements confirm the power-law decay of the order-parameter correlation function appropriate to a Kosterlitz-Thouless description of phase transitions in 2D systems. Accordingly, the superconducting phase transition temperature Tc is related to the unbinding of vortex-antivortex pairs either by temperature and/or disorder. The application of magnetic fields unveils fundamentally different physics in which, rather than a vortex unbinding transition, a field-tuned QPT emerges with the signature of a disorder-dependent critical field Bc that identifies the delocalization and Bose condensation of field-induced vortices. The concomitant pronounced divergence in resistance, which becomes increasing sharp as the temperature is lowered, marks the boundary between a superconductor harboring both Bose condensed Cooper pairs and localized vortices and an insulator harboring both Bose condensed vortices and localized Cooper pairs. The data for this putative QPT are well described by finite temperature scaling theory with critical exponent values accurately determined. At higher fields there is a second critical field where the transverse resistance appears to diverge, signaling the unbinding of pairs with the superconducting energy gap

  19. Silicon Carbide Junction Field Effect Transistor Digital Logic Gates Demonstrated at 600 deg. C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1998-01-01

    The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. The HTIES team recently fabricated and demonstrated the first semiconductor digital logic gates ever to function at 600 C.

  20. Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

    NASA Astrophysics Data System (ADS)

    Tsai, Jung-Hui; Lour, Wen-Shiung; Huang, Chia-Hong; Dale, Ning-Feng; Lee, Yuan-Hong; Sheng, Jhih-Syuan; Liu, Wen-Chau

    2010-03-01

    In this paper, high device linearity and characteristics of an InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor is demonstrated. The energy band and hole distribution are depicted with respect to the device performance. Due to the npn depletion of the camel-like gate structure, the considerable conduction band discontinuities at n +-InGaP/p-GaAs and p-GaAs/i-In 0.15Ga 0.85As heterojunctions, and the good confinement effect for holes in InGaAs quantum well, a large gate turn-on voltage is achieved. The drain saturation current linearly increases with the gate voltage and the high device linearity is illustrated by fitting the drain current versus the gate voltage. The excellent performance of the studied device is promise for linear amplifiers and high-frequency circuit applications.

  1. Metallic monoclinic phase in VO2 induced by electrochemical gating: In situ Raman study

    NASA Astrophysics Data System (ADS)

    Nath Gupta, Satyendra; Pal, Anand; Muthu, D. V. S.; Kumar, P. S. Anil; Sood, A. K.

    2016-07-01

    We report in situ Raman scattering studies of electrochemically top gated VO2 thin film to address metal-insulator transition (MIT) under gating. The room temperature monoclinic insulating phase goes to metallic state at a gate voltage of 2.6 V. However, the number of Raman modes do not change with electrolyte gating showing that the metallic phase is still monoclinic. The high-frequency Raman mode A g (7) near 616 cm-1 ascribed to V-O vibration of bond length 2.06 Å in VO6 octahedra hardens with increasing gate voltage and the B g (3) mode near 654 cm-1 softens. This shows that the distortion of the VO6 octahedra in the monoclinic phase decreases with gating. The time-dependent Raman data at fixed gate voltages of 1 V (for 50 minutes, showing enhancement of conductivity by a factor of 50) and 2 V (for 130 minutes, showing further increase in conductivity by a factor of 5) show similar changes in high-frequency Raman modes A g (7) and B g (3) as observed in gating. This slow change in conductance together with Raman frequency changes show that the governing mechanism for metalization is more likely due to the diffusion-controlled oxygen vacancy formation due to the applied electric field.

  2. Effect of electric field configuration on streamer and partial discharge phenomena in a hydrocarbon insulating liquid under AC stress

    NASA Astrophysics Data System (ADS)

    Liu, Z.; Liu, Q.; Wang, Z. D.

    2016-05-01

    This paper concerns pre-breakdown phenomena, including streamer characteristics from a fundamental perspective and partial discharge (PD) measurements from an industrial perspective, in a hydrocarbon insulating liquid. The aim was to investigate the possible changes of the liquid’s streamer and PD characteristics and their correlations when the uniformity of the AC electric field varies. In the experiments, a plane-to-plane electrode system incorporating a needle protrusion was used in addition to a needle-to-plane electrode system. When the applied electric field became more uniform, fewer radial branches occurred and streamer propagation towards the ground electrode was enhanced. The transition from streamer propagation dominated breakdown in divergent fields to streamer initiation dominated breakdown in uniform fields was evidenced. Relationships between streamer and PD characteristics were established, which were found to be electric field dependent. PD of the same apparent charge would indicate longer streamers if the electric field is more uniform.

  3. Selective nitrate detection by an enzymatic sensor based on an extended-gate type organic field-effect transistor.

    PubMed

    Minami, Tsuyoshi; Sasaki, Yui; Minamiki, Tsukuru; Wakida, Shin-Ichi; Kurita, Ryoji; Niwa, Osamu; Tokito, Shizuo

    2016-07-15

    First selective nitrate biosensor device based on an extended-gate type organic field-effect transistor (OFET) is reported. The fabricated sensor device consists of the extended-gate electrode functionalized by a nitrate reductase with a mediator (=a bipyridinium derivative) and an OFET-based transducer. The mechanism of the nitrate detection can be explained by an electron-relay on the extended-gate electrode, resulting in changes of the electric properties of the OFET. The detection limit of nitrate in water is estimated to be 45 ppb, which suggests that the sensitivity of our fabricated sensor is comparable to those of some conventional detection methods. As a practical application of the OFET sensor, the nitrate detection in diluted human saliva has been successfully demonstrated; the results agreed well with those by conventional colorimetric measurement. The advantages of OFETs are printability, mechanical flexibility, stretchability and disposability, meaning that the fabricated OFET could open up a new approach for low-cost electronic devices toward on-site detection of nitrate in aqueous media.

  4. A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications

    NASA Astrophysics Data System (ADS)

    Asthana, Pranav Kumar; Goswami, Yogesh; Ghosh, Bahniman

    2016-05-01

    We propose a nanoscale single gate ultra thin body intrinsic channel tunnel field effect transistor using the charge plasma concept for ultra low power applications. The characteristics of TFETs (having low leakage) are improved by junctionless TFETs through blending advantages of Junctionless FETs (with high on current). We further improved the characteristics, simultaneously simplifying the structure at a very low power rating using an InAs channel. We found that the proposed device structure has reduced short channel effects and parasitics and provides high speed operation even at a very low supply voltage with low leakage. Simulations resulted in IOFF of ˜ 9 × 10-16 A/μm, ION of ˜20 μA/μm, ION/IOFF of ˜2 × 1010, threshold voltage of 0.057 V, subthreshold slope of 7 mV/dec and DIBL of 86 mV/V for PolyGate/HfO2/InAs TFET at a temperature of 300 K, gate length of 20 nm, oxide thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and VDD of 0.2 V.

  5. A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications

    NASA Astrophysics Data System (ADS)

    Asthana, Pranav Kumar; Goswami, Yogesh; Ghosh, Bahniman

    2016-05-01

    We propose a nanoscale single gate ultra thin body intrinsic channel tunnel field effect transistor using the charge plasma concept for ultra low power applications. The characteristics of TFETs (having low leakage) are improved by junctionless TFETs through blending advantages of Junctionless FETs (with high on current). We further improved the characteristics, simultaneously simplifying the structure at a very low power rating using an InAs channel. We found that the proposed device structure has reduced short channel effects and parasitics and provides high speed operation even at a very low supply voltage with low leakage. Simulations resulted in IOFF of ∼ 9 × 10‑16 A/μm, ION of ∼20 μA/μm, ION/IOFF of ∼2 × 1010, threshold voltage of 0.057 V, subthreshold slope of 7 mV/dec and DIBL of 86 mV/V for PolyGate/HfO2/InAs TFET at a temperature of 300 K, gate length of 20 nm, oxide thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and VDD of 0.2 V.

  6. On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

    SciTech Connect

    Bakeroot, B.; You, S.; Van Hove, M.; De Jaeger, B.; Geens, K.; Stoffels, S.; Decoutere, S.; Wu, T.-L.; Hu, J.

    2014-10-07

    It is commonly accepted that interface states at the passivation surface of AlGaN/GaN heterostructures play an important role in the formation of the 2DEG density. Several interface state models are cited throughout literature, some with discrete levels, others with different kinds of distributions, or a combination of both. The purpose of this article is to compare the existing interface state models with both direct and indirect measurements of these interface states from literature (e.g., through the hysteresis of transfer characteristics of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) employing such an interface in the gate region) and Technology Computer Aided Design (TCAD) simulations of 2DEG densities as a function of the AlGaN thickness. The discrepancies between those measurements and TCAD simulations (also those commonly found in literature) are discussed. Then, an alternative model inspired by the Disorder Induced Gap State model for compound semiconductors is proposed. It is shown that defining a deep border trap inside the insulator can solve these discrepancies and that this alternative model can explain the origin of the two dimensional electron gas in combination with a high-quality interface that, by definition, has a low interface state density.

  7. On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Bakeroot, B.; You, S.; Wu, T.-L.; Hu, J.; Van Hove, M.; De Jaeger, B.; Geens, K.; Stoffels, S.; Decoutere, S.

    2014-10-01

    It is commonly accepted that interface states at the passivation surface of AlGaN/GaN heterostructures play an important role in the formation of the 2DEG density. Several interface state models are cited throughout literature, some with discrete levels, others with different kinds of distributions, or a combination of both. The purpose of this article is to compare the existing interface state models with both direct and indirect measurements of these interface states from literature (e.g., through the hysteresis of transfer characteristics of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) employing such an interface in the gate region) and Technology Computer Aided Design (TCAD) simulations of 2DEG densities as a function of the AlGaN thickness. The discrepancies between those measurements and TCAD simulations (also those commonly found in literature) are discussed. Then, an alternative model inspired by the Disorder Induced Gap State model for compound semiconductors is proposed. It is shown that defining a deep border trap inside the insulator can solve these discrepancies and that this alternative model can explain the origin of the two dimensional electron gas in combination with a high-quality interface that, by definition, has a low interface state density.

  8. Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

    NASA Astrophysics Data System (ADS)

    Liao, Wen-Chia; Chen, Yan-Lun; Chen, Zheng-Xing; Chyi, Jen-Inn; Hsin, Yue-Ming

    2014-09-01

    This study examined the correlation between the off-state leakage current and dynamic on-resistance (RON) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The RON transients in a Schottky-gate HFET (SGHFET) and metal-insulator-semiconductor HFET (MISHFET) were observed after applying various amounts of drain-source bias stress. The gate insulator in the MISHFET effectively reduced the electron injection from the gate, thereby mitigating the degradation in dynamic switching performance. However, at relaxation times exceeding 10 ms, additional detrapping occurred in both the SGHFET and MISHFET when the applied stress exceeded a critical voltage level, 50 V for the SGHFET and 60 V for MISHFET, resulting in resistive leakage current build-up and the formation of hot carriers. These high-energy carriers acted as ionized traps in the channel or buffer layers, which subsequently caused additional trapping and detrapping to occur in both HFETs during the dynamic switching test conducted.

  9. Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

    PubMed Central

    2014-01-01

    This study examined the correlation between the off-state leakage current and dynamic on-resistance (RON) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The RON transients in a Schottky-gate HFET (SGHFET) and metal-insulator-semiconductor HFET (MISHFET) were observed after applying various amounts of drain-source bias stress. The gate insulator in the MISHFET effectively reduced the electron injection from the gate, thereby mitigating the degradation in dynamic switching performance. However, at relaxation times exceeding 10 ms, additional detrapping occurred in both the SGHFET and MISHFET when the applied stress exceeded a critical voltage level, 50 V for the SGHFET and 60 V for MISHFET, resulting in resistive leakage current build-up and the formation of hot carriers. These high-energy carriers acted as ionized traps in the channel or buffer layers, which subsequently caused additional trapping and detrapping to occur in both HFETs during the dynamic switching test conducted. PMID:25258601

  10. Electrical Characteristics of Top-Gated Graphene Field Effect Transistors Fabricated on Stainless Steel (STS) Substrate.

    PubMed

    Jeong, Saebyuk; Lee, Hojoon; Lee, Jeong-Soo

    2016-05-01

    Top-gated Graphene transistors with Al2O3 gate-dielectric on the flexible stainless steel substrate have been demonstrated. Graphene was synthesized on copper foil using a chemical vapor deposition method and transferred onto the stainless steel substrate by wet transfer technique. The stainless steel substrate was polished by chemical mechanical polishing method and the spin-on-glass layer was coated on the surface to improve the surface roughness. The average surface roughness R(a) was as low as 5.9 nm from the AFM measurement. The measured hole and electron mobilities from the current-voltage characteristics at room temperature were calculated as high as 310 and 45 cm2/Vs, respectively. In addition, the effect of surrounding temperature up to 355 K on the electrical variations was investigated. The mobility was inversely proportional to the temperature with negligible hysteresis where the temperature coefficient was calculated as low as -0.65 %/K. PMID:27483892

  11. Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

    NASA Astrophysics Data System (ADS)

    Park, Goon-Ho; Kim, Kwan-Soo; Fukidome, Hirokazu; Suemitsu, Tetsuya; Otsuji, Taiichi; Cho, Won-Ju; Suemitsu, Maki

    2016-09-01

    The performance of actual graphene FETs suffers significant degradation from that expected for pristine graphene, which can be partly attributed to the onset of defects and the doping of the graphene induced during the fabrication of gate dielectric layers. These effects are mainly due to high-temperature processes such as postdeposition annealing. Here, we propose a novel low-temperature method for the fabrication of gate dielectrics, which consists of the natural oxidation of an ultrathin Al layer and a sol–gel process with oxygen plasma treatment to form an Al2O3 layer. The method results in a significant reduction of defects and doping in graphene, and devices fabricated by this method show an intrinsic carrier mobility as high as 9100 cm2 V‑1 s‑1.

  12. Electrical Characteristics of Top-Gated Graphene Field Effect Transistors Fabricated on Stainless Steel (STS) Substrate.

    PubMed

    Jeong, Saebyuk; Lee, Hojoon; Lee, Jeong-Soo

    2016-05-01

    Top-gated Graphene transistors with Al2O3 gate-dielectric on the flexible stainless steel substrate have been demonstrated. Graphene was synthesized on copper foil using a chemical vapor deposition method and transferred onto the stainless steel substrate by wet transfer technique. The stainless steel substrate was polished by chemical mechanical polishing method and the spin-on-glass layer was coated on the surface to improve the surface roughness. The average surface roughness R(a) was as low as 5.9 nm from the AFM measurement. The measured hole and electron mobilities from the current-voltage characteristics at room temperature were calculated as high as 310 and 45 cm2/Vs, respectively. In addition, the effect of surrounding temperature up to 355 K on the electrical variations was investigated. The mobility was inversely proportional to the temperature with negligible hysteresis where the temperature coefficient was calculated as low as -0.65 %/K.

  13. Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

    SciTech Connect

    Santi, C. de; Meneghini, M. Meneghesso, G.; Zanoni, E.

    2014-08-18

    With this paper we propose a test method for evaluating the dynamic performance of GaN-based transistors, namely, gate-frequency sweep measurements: the effectiveness of the method is verified by characterizing the dynamic performance of Gate Injection Transistors. We demonstrate that this method can provide an effective description of the impact of traps on the transient performance of Heterojunction Field Effect Transistors, and information on the properties (activation energy and cross section) of the related defects. Moreover, we discuss the relation between the results obtained by gate-frequency sweep measurements and those collected by conventional drain current transients and double pulse characterization.

  14. Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around.

    PubMed

    Guerfi, Youssouf; Larrieu, Guilhem

    2016-12-01

    Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction channel and then a better immunity against the short channel effects (SCE). In this letter, a large-scale process of GAA vertical silicon nanowire (VNW) MOSFETs is presented. A top-down approach is adopted for the realization of VNWs with an optimum reproducibility followed by thin layer engineering at nanoscale. Good overall electrical performances were obtained, with excellent electrostatic behavior (a subthreshold slope (SS) of 95 mV/dec and a drain induced barrier lowering (DIBL) of 25 mV/V) for a 15-nm gate length. Finally, a first demonstration of dual integration of n-type and p-type VNW transistors for the realization of CMOS inverter is proposed. PMID:27094824

  15. Compact field programmable gate array-based pulse-sequencer and radio-frequency generator for experiments with trapped atoms

    SciTech Connect

    Pruttivarasin, Thaned; Katori, Hidetoshi

    2015-11-15

    We present a compact field-programmable gate array (FPGA) based pulse sequencer and radio-frequency (RF) generator suitable for experiments with cold trapped ions and atoms. The unit is capable of outputting a pulse sequence with at least 32 transistor-transistor logic (TTL) channels with a timing resolution of 40 ns and contains a built-in 100 MHz frequency counter for counting electrical pulses from a photo-multiplier tube. There are 16 independent direct-digital-synthesizers RF sources with fast (rise-time of ∼60 ns) amplitude switching and sub-mHz frequency tuning from 0 to 800 MHz.

  16. Compact field programmable gate array-based pulse-sequencer and radio-frequency generator for experiments with trapped atoms.

    PubMed

    Pruttivarasin, Thaned; Katori, Hidetoshi

    2015-11-01

    We present a compact field-programmable gate array (FPGA) based pulse sequencer and radio-frequency (RF) generator suitable for experiments with cold trapped ions and atoms. The unit is capable of outputting a pulse sequence with at least 32 transistor-transistor logic (TTL) channels with a timing resolution of 40 ns and contains a built-in 100 MHz frequency counter for counting electrical pulses from a photo-multiplier tube. There are 16 independent direct-digital-synthesizers RF sources with fast (rise-time of ∼60 ns) amplitude switching and sub-mHz frequency tuning from 0 to 800 MHz. PMID:26628171

  17. Composite multi-qubit gates dynamically corrected against charge noise and magnetic field noise for singlet-triplet qubits

    NASA Astrophysics Data System (ADS)

    Kestner, Jason; Barnes, Edwin; Wang, Xin; Bishop, Lev; Das Sarma, Sankar

    2013-03-01

    We use previously described single-qubit SUPCODE pulses on both intra-qubit and inter-qubit exchange couplings, integrated with existing strategies such as BB1, to theoretically construct a CNOT gate that is robust against both charge noise and magnetic field gradient fluctuations. We show how this allows scalable, high-fidelity implementation of arbitrary multi-qubit operations using singlet-triplet spin qubits in the presence of experimentally realistic noise. This work is supported by LPS-NSA-CMTC, IARPA-MQCO and CNAM.

  18. Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates

    NASA Astrophysics Data System (ADS)

    Ma, Chunrui; Gong, Youpin; Lu, Rongtao; Brown, Emery; Ma, Beihai; Li, Jun; Wu, Judy

    2015-11-01

    A transition in source-drain current vs. back gate voltage (ID-VBG) characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin films has been observed on graphene field-effect transistors on Pb0.92La0.08Zr0.52Ti0.48O3 gates (GFET/PLZT-Gate) during a vacuum annealing process developed to systematically remove the polar molecules adsorbed on the GFET channel surface. This allows the extrinsic and intrinsic hysteresis on GFET/PLZT-gate devices to detangle and the detection of the dynamic switch of electric dipoles using GFETs, taking advantage of their high gating efficiency on ferroelectric gate. A model of the charge trapping and pinning mechanism is proposed to successfully explain the transition. In response to pulsed VBG trains of positive, negative, as well as alternating polarities, respectively, the source-drain current ID variation is instantaneous with the response amplitude following the ID-VBG loops measured by DC VBG with consideration of the remnant polarization after a given VBG pulse when the gate electric field exceeds the coercive field of the PLZT. A detection sensitivity of around 212 dipole per μm2 has been demonstrated at room temperature, suggesting the GFET/ferroelectric-gate devices provide a promising high-sensitivity scheme for uncooled detection of electrical dipole dynamic switch.A transition in source-drain current vs. back gate voltage (ID-VBG) characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin films has been observed on graphene field-effect transistors on Pb0.92La0.08Zr0.52Ti0.48O3 gates (GFET/PLZT-Gate) during a vacuum annealing process developed to systematically remove the polar molecules adsorbed on the GFET channel surface. This allows the extrinsic and intrinsic hysteresis on GFET/PLZT-gate

  19. Electroluminescence from individual air-suspended carbon nanotubes within split-gate structures

    NASA Astrophysics Data System (ADS)

    Higashide, N.; Uda, T.; Yoshida, M.; Ishii, A.; Kato, Y. K.

    Electrically induced light emission from chirality-identified single-walled carbon nanotubes are investigated by utilizing split-gate field-effect devices fabricated on silicon-on-insulator substrates. We begin by etching trenches through the top silicon layer into the buried oxide, and the silicon layer is thermally oxidized for use as local gates. We partially remove the oxide and form gate electrodes, then contacts for nanotubes are deposited on both sides of the trench. Catalyst particles are placed on the contacts, and nanotubes are grown over the trench by chemical vapor deposition. We use photoluminescence microscopy to locate the nanotubes and perform excitation spectroscopy to identify their chirality. Gate-induced photoluminescence quenching is used to confirm carrier doping, and electroluminescence intensity is investigated as a function of the split-gate and bias voltages. Work supported by JSPS (KAKENHI 24340066, 26610080), MEXT (Photon Frontier Network Program, Nanotechnology Platform), Canon Foundation, and Asahi Glass Foundation.

  20. Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates

    NASA Astrophysics Data System (ADS)

    Guerrera, S. A.; Akinwande, A. I.

    2016-07-01

    We developed a fabrication process for embedding a dense array (108 cm-2) of high-aspect-ratio silicon nanowires (200 nm diameter and 10 μm tall) in a dielectric matrix and then structured/exposed the tips of the nanowires to form self-aligned gate field emitter arrays using chemical mechanical polishing (CMP). Using this structure, we demonstrated a high current density (100 A cm-2), uniform, and long lifetime (>100 h) silicon field emitter array architecture in which the current emitted by each tip is regulated by the silicon nanowire current limiter connected in series with the tip. Using the current voltage characteristics and with the aid of numerical device models, we estimated the tip radius of our field emission arrays to be ≈4.8 nm, as consistent with the tip radius measured using a scanning electron microscope (SEM).