Pseudorelativistic laser-semiconductor quantum plasma interactions.
Wang, Yunliang; Eliasson, Bengt
2016-04-01
A model is presented for the nonlinear interaction between a large-amplitude laser and semiconductor plasma in the semirelativistic quantum regime. The collective behavior of the electrons in the conduction band of a narrow-gap semiconductor is modeled by a Klein-Gordon equation, which is nonlinearly coupled with the electromagnetic (EM) wave through the Maxwell equations. The parametric instabilities involving the stimulated Raman scattering and modulational instabilities are analyzed theoretically and the resulting dispersion relation relation is solved numerically to assess the quantum effects on the instability. The study of the quasi-steady-state solution of the system and direct numerical simulations demonstrate the possibility of the formation of localized EM solitary structures trapped in electrons density holes. PMID:27176416
Pseudorelativistic laser-semiconductor quantum plasma interactions
NASA Astrophysics Data System (ADS)
Wang, Yunliang; Eliasson, Bengt
2016-04-01
A model is presented for the nonlinear interaction between a large-amplitude laser and semiconductor plasma in the semirelativistic quantum regime. The collective behavior of the electrons in the conduction band of a narrow-gap semiconductor is modeled by a Klein-Gordon equation, which is nonlinearly coupled with the electromagnetic (EM) wave through the Maxwell equations. The parametric instabilities involving the stimulated Raman scattering and modulational instabilities are analyzed theoretically and the resulting dispersion relation relation is solved numerically to assess the quantum effects on the instability. The study of the quasi-steady-state solution of the system and direct numerical simulations demonstrate the possibility of the formation of localized EM solitary structures trapped in electrons density holes.
Competing interactions in semiconductor quantum dots
van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.
2014-10-14
In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.
Competing interactions in semiconductor quantum dots
van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.
2014-10-14
In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions atmore » longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.« less
Parametric interactions in presence of different size colloids in semiconductor quantum plasmas
Vanshpal, R. Sharma, Uttam; Dubey, Swati
2015-07-31
Present work is an attempt to investigate the effect of different size colloids on parametric interaction in semiconductor quantum plasma. Inclusion of quantum effect is being done in this analysis through quantum correction term in classical hydrodynamic model of homogeneous semiconductor plasma. The effect is associated with purely quantum origin using quantum Bohm potential and quantum statistics. Colloidal size and quantum correction term modify the parametric dispersion characteristics of ion implanted semiconductor plasma medium. It is found that quantum effect on colloids is inversely proportional to their size. Moreover critical size of implanted colloids for the effective quantum correction is determined which is found to be equal to the lattice spacing of the crystal.
Interaction of graphene quantum dots with bulk semiconductor surfaces
Mohapatra, P. K.; Singh, B. P.; Kushavah, Dushyant; Mohapatra, J.
2015-05-15
Highly luminescent graphene quantum dots (GQDs) are synthesized through thermolysis of glucose. The average lateral size of the synthesized GQDs is found to be ∼5 nm. The occurrence of D and G band at 1345 and 1580 cm{sup −1} in Raman spectrum confirms the presence of graphene layers. GQDs are mostly consisting of 3 to 4 graphene layers as confirmed from the AFM measurements. Photoluminescence (PL) measurement shows a distinct broadening of the spectrum when GQDs are on the semiconducting bulk surface compared to GQDs in water. The time resolved PL measurement shows a significant shortening in PL lifetime due to the substrate interaction on GQDs compared to the GQDs in solution phase.
LDRD final report on quantum computing using interacting semiconductor quantum wires.
Lyo, Sungkwun Kenneth; Dunn, Roberto G.; Lilly, Michael Patrick; Tibbetts, Denise R. ); Stephenson, Larry L.; Seamons, John Andrew; Reno, John Louis; Bielejec, Edward Salvador; Simmons, Jerry Alvon
2006-01-01
For several years now quantum computing has been viewed as a new paradigm for certain computing applications. Of particular importance to this burgeoning field is the development of an algorithm for factoring large numbers which obviously has deep implications for cryptography and national security. Implementation of these theoretical ideas faces extraordinary challenges in preparing and manipulating quantum states. The quantum transport group at Sandia has demonstrated world-leading, unique double quantum wires devices where we have unprecedented control over the coupling strength, number of 1 D channels, overlap and interaction strength in this nanoelectronic system. In this project, we study 1D-1D tunneling with the ultimate aim of preparing and detecting quantum states of the coupled wires. In a region of strong tunneling, electrons can coherently oscillate from one wire to the other. By controlling the velocity of the electrons, length of the coupling region and tunneling strength we will attempt to observe tunneling oscillations. This first step is critical for further development double quantum wires into the basic building block for a quantum computer, and indeed for other coupled nanoelectronic devices that will rely on coherent transport. If successful, this project will have important implications for nanoelectronics, quantum computing and information technology.
Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells
NASA Technical Reports Server (NTRS)
Liu, Ansheng; Ning, Cun-Zheng
1999-01-01
In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.
Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.
2015-03-30
Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biologicalmore » functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.« less
Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.
2015-03-30
Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biological functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.
Electron Spin Dynamics in Semiconductor Quantum Dots
Marie, X.; Belhadj, T.; Urbaszek, B.; Amand, T.; Krebs, O.; Lemaitre, A.; Voisin, P.
2011-07-15
An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.
Understanding electronic systems in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Ciftja, Orion
2013-11-01
Systems of confined electrons are found everywhere in nature in the form of atoms where the orbiting electrons are confined by the Coulomb attraction of the nucleus. Advancement of nanotechnology has, however, provided us with an alternative way to confine electrons by using artificial confining potentials. A typical structure of this nature is the quantum dot, a nanoscale system which consists of few confined electrons. There are many types of quantum dots ranging from self-assembled to miniaturized semiconductor quantum dots. In this work we are interested in electrostatically confined semiconductor quantum dot systems where the electrostatic confining potential that traps the electrons is generated by external electrodes, doping, strain or other factors. A large number of semiconductor quantum dots of this type are fabricated by applying lithographically patterned gate electrodes or by etching on two-dimensional electron gases in semiconductor heterostructures. Because of this, the whole structure can be treated as a confined two-dimensional electron system. Quantum confinement profoundly affects the way in which electrons interact with each other, and external parameters such as a magnetic field. Since a magnetic field affects both the orbital and the spin motion of the electrons, the interplay between quantum confinement, electron-electron correlation effects and the magnetic field gives rise to very interesting physical phenomena. Thus, confined systems of electrons in a semiconductor quantum dot represent a unique opportunity to study fundamental quantum theories in a controllable atomic-like setup. In this work, we describe some common theoretical models which are used to study confined systems of electrons in a two-dimensional semiconductor quantum dot. The main emphasis of the work is to draw attention to important physical phenomena that arise in confined two-dimensional electron systems under various quantum regimes.
Quantum ratchet in two-dimensional semiconductors with Rashba spin-orbit interaction
Ang, Yee Sin; Ma, Zhongshui; Zhang, Chao
2015-01-01
Ratchet is a device that produces direct current of particles when driven by an unbiased force. We demonstrate a simple scattering quantum ratchet based on an asymmetrical quantum tunneling effect in two-dimensional electron gas with Rashba spin-orbit interaction (R2DEG). We consider the tunneling of electrons across a square potential barrier sandwiched by interface scattering potentials of unequal strengths on its either sides. It is found that while the intra-spin tunneling probabilities remain unchanged, the inter-spin-subband tunneling probabilities of electrons crossing the barrier in one direction is unequal to that of the opposite direction. Hence, when the system is driven by an unbiased periodic force, a directional flow of electron current is generated. The scattering quantum ratchet in R2DEG is conceptually simple and is capable of converting a.c. driving force into a rectified current without the need of additional symmetry breaking mechanism or external magnetic field. PMID:25598490
NASA Astrophysics Data System (ADS)
Blekos, Kostas; Iliopoulos, Nikos; Stasinou, Maria-Eftaksia; Vlachos, Evaggelos; Terzis, Andreas F.
2014-12-01
We theoretically investigate polarization-entangled photon generation using a semiconductor quantum dot embedded in a microcavity. The entangled states can be produced by the application of two cross-circularly polarized laser fields. The quantum dot nanostructure is considered as a four-level system (ground, two excitons and bi-exciton states), and the theoretical study relies on the dressed states scheme. The quantum correlations, reported in terms of the entanglement of formation, are extensively studied for several values of the important parameters of the quantum dot system as the bi-exciton binding energy, the decoherence times of the characteristic transitions, the quality factor of the cavity and the intensities of the applied fields.
Stewart, Michael H; Huston, Alan L; Scott, Amy M; Efros, Alexander L; Melinger, Joseph S; Gemmill, Kelly Boeneman; Trammell, Scott A; Blanco-Canosa, Juan B; Dawson, Philip E; Medintz, Igor L
2012-06-26
The ability of luminescent semiconductor quantum dots (QDs) to engage in diverse energy transfer processes with organic dyes, light-harvesting proteins, metal complexes, and redox-active labels continues to stimulate interest in developing them for biosensing and light-harvesting applications. Within biosensing configurations, changes in the rate of energy transfer between the QD and the proximal donor, or acceptor, based upon some external (biological) event form the principle basis for signal transduction. However, designing QD sensors to function optimally is predicated on a full understanding of all relevant energy transfer mechanisms. In this report, we examine energy transfer between a range of CdSe-ZnS core-shell QDs and a redox-active osmium(II) polypyridyl complex. To facilitate this, the Os complex was synthesized as a reactive isothiocyanate and used to label a hexahistidine-terminated peptide. The Os-labeled peptide was ratiometrically self-assembled to the QDs via metal affinity coordination, bringing the Os complex into close proximity of the nanocrystal surface. QDs displaying different emission maxima were assembled with increasing ratios of Os-peptide complex and subjected to detailed steady-state, ultrafast transient absorption, and luminescence lifetime decay analyses. Although the possibility exists for charge transfer quenching interactions, we find that the QD donors engage in relatively efficient Förster resonance energy transfer with the Os complex acceptor despite relatively low overall spectral overlap. These results are in contrast to other similar QD donor-redox-active acceptor systems with similar separation distances, but displaying far higher spectral overlap, where charge transfer processes were reported to be the dominant QD quenching mechanism.
Charge state hysteresis in semiconductor quantum dots
Yang, C. H.; Rossi, A. Lai, N. S.; Leon, R.; Lim, W. H.; Dzurak, A. S.
2014-11-03
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.
Quantum theory of electroabsorption in semiconductor nanocrystals.
Tepliakov, Nikita V; Leonov, Mikhail Yu; Baranov, Alexander V; Fedorov, Anatoly V; Rukhlenko, Ivan D
2016-01-25
We develop a simple quantum-mechanical theory of interband absorption by semiconductor nanocrystals exposed to a dc electric field. The theory is based on the model of noninteracting electrons and holes in an infinitely deep quantum well and describes all the major features of electroabsorption, including the Stark effect, the Franz-Keldysh effect, and the field-induced spectral broadening. It is applicable to nanocrystals of different shapes and dimensions (quantum dots, nanorods, and nanoplatelets), and will prove useful in modeling and design of electrooptical devices based on ensembles of semiconductor nanocrystals.
Pandya, Ankur; Shinde, Satyam; Jha, Prafulla K.
2015-05-15
In this paper the hot electron transport properties like carrier energy and momentum scattering rates and electron energy loss rates are calculated via interactions of electrons with polar acoustical phonons for Mn doped BN quantum well in BN nanosheets via piezoelectric scattering and deformation potential mechanisms at low temperatures with high electric field. Electron energy loss rate increases with the electric field. It is observed that at low temperatures and for low electric field the phonon absorption is taking place whereas, for sufficient large electric field, phonon emission takes place. Under the piezoelectric (polar acoustical phonon) scattering mechanism, the carrier scattering rate decreases with the reduction of electric field at low temperatures wherein, the scattering rate variation with electric field is limited by a specific temperature beyond which there is no any impact of electric field on such scattering.
Bright Core-Shell Semiconductor Quantum Wires
Liu, Yi-Hsin; Wang, Fudong; Hoy, Jessica; Wayman, Virginia L.; Steinberg, Lindsey K.; Loomis, Richard A.; Buhro, William E.
2012-01-01
Colloidal CdTe quantum wires are reported having ensemble photoluminescence efficiencies as high as 25% under low excitation-power densities. High photoluminescence efficiencies are achieved by formation of a monolayer CdS shell on the CdTe quantum wires. Like other semiconductor nanowires, the CdTe quantum wires may contain frequent wurtzite–zinc-blende structural alternations along their lengths. The present results demonstrate that the optical properties, emission-peak shape and photoluminescence efficiencies, are independent of the presence or absence of such structural alternations. PMID:23095017
Semiconductor quantum dot-sensitized solar cells.
Tian, Jianjun; Cao, Guozhong
2013-10-31
Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.
Semiconductor quantum dot-sensitized solar cells
Tian, Jianjun; Cao, Guozhong
2013-01-01
Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future. PMID:24191178
NASA Astrophysics Data System (ADS)
Ravi, Koustuban; Wang, Qian; Ho, Seng-Tiong
2015-08-01
We report a new computational model for simulations of electromagnetic interactions with semiconductor quantum well(s) (SQW) in complex electromagnetic geometries using the finite-difference time-domain method. The presented model is based on an approach of spanning a large number of electron transverse momentum states in each SQW sub-band (multi-band) with a small number of discrete multi-electron states (multi-level, multi-electron). This enables accurate and efficient two-dimensional (2-D) and three-dimensional (3-D) simulations of nanophotonic devices with SQW active media. The model includes the following features: (1) Optically induced interband transitions between various SQW conduction and heavy-hole or light-hole sub-bands are considered. (2) Novel intra sub-band and inter sub-band transition terms are derived to thermalize the electron and hole occupational distributions to the correct Fermi-Dirac distributions. (3) The terms in (2) result in an explicit update scheme which circumvents numerically cumbersome iterative procedures. This significantly augments computational efficiency. (4) Explicit update terms to account for carrier leakage to unconfined states are derived, which thermalize the bulk and SQW populations to a common quasi-equilibrium Fermi-Dirac distribution. (5) Auger recombination and intervalence band absorption are included. The model is validated by comparisons to analytic band-filling calculations, simulations of SQW optical gain spectra, and photonic crystal lasers.
Modeling and Simulation of Semiconductor Quantum Well Structures and Lasers
NASA Technical Reports Server (NTRS)
Ning, Cun-Zheng; Saini, Subbash (Technical Monitor)
1998-01-01
In this talk I will cover two aspects of modeling and simulation efforts at NASA Ames Research Center. In the quantum well structure simulation, we typically start from the quantum mechanical calculation of the quantum well structures for the confined/and unconfined eigen states and functions. A bandstructure calculation of the k*p type is then performed for the confined valence states. This information is then used to computer the optical gain and refractive index of the quantum well structures by solving the linearized multiband semiconductor Bloch equations with the many-body interactions included. In our laser simulation, we typically solve the envelope equations for the laser field in space-time domain, coupled with a reduced set of material equations using the microscopic calculation of the first step. Finally I will show some examples of both aspects of simulation and modeling.
Guiding effect of quantum wells in semiconductor lasers
Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N
2013-05-31
The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)
Quantum size effects in spherical semiconductor microcrystals
NASA Astrophysics Data System (ADS)
Nair, Selvakumar V.; Sinha, Sucharita; Rustagi, K. C.
1987-03-01
The size dependence of the lowest electron-hole state in semiconductor microcrystals is calculated using the variational principle with a three-parameter Hylleraas-type wave function. For very small particles the Coulomb interaction may be treated as a perturbation. For larger particles the size dependence of the energy is much sharper than that expected in previous work.
Quantum walks of interacting fermions on a cycle graph
Melnikov, Alexey A.; Fedichkin, Leonid E.
2016-01-01
Quantum walks have been employed widely to develop new tools for quantum information processing recently. A natural quantum walk dynamics of interacting particles can be used to implement efficiently the universal quantum computation. In this work quantum walks of electrons on a graph are studied. The graph is composed of semiconductor quantum dots arranged in a circle. Electrons can tunnel between adjacent dots and interact via Coulomb repulsion, which leads to entanglement. Fermionic entanglement dynamics is obtained and evaluated. PMID:27681057
Quantum walks of interacting fermions on a cycle graph
NASA Astrophysics Data System (ADS)
Melnikov, Alexey A.; Fedichkin, Leonid E.
2016-09-01
Quantum walks have been employed widely to develop new tools for quantum information processing recently. A natural quantum walk dynamics of interacting particles can be used to implement efficiently the universal quantum computation. In this work quantum walks of electrons on a graph are studied. The graph is composed of semiconductor quantum dots arranged in a circle. Electrons can tunnel between adjacent dots and interact via Coulomb repulsion, which leads to entanglement. Fermionic entanglement dynamics is obtained and evaluated.
Quantum transport in nanoscale semiconductor devices
NASA Astrophysics Data System (ADS)
Jones, Gregory Millington
Because of technological advancement, transistor dimensions are approaching the length scale of the electron Fermi wavelength, on the order of only nanometers. In this regime, quantum mechanical phenomena will dominate electron transport. Using InAs single quantum wells, we have fabricated Y-shaped electron waveguides whose lengths are smaller than the elastic mean free path. Electron transport in these waveguides is ballistic, a quantum mechanical phenomenon. Coupled to the electron waveguide are two gates used to coherently steer the electron wave. We demonstrate for the first time that gating modifies the electron's wave function, by changing its geometrical resonance in the waveguide. Evidence of this alteration is the observation of anti-correlated, oscillatory transconductances. Our data provides direct evidence of wavefunction steering in a transistor structure and has applications in high-speed, low-power electronics. Quantum computing, if realized, will have a significant impact in computer security. The development of quantum computers has been hindered by challenges in producing the basic building block, the qubit. Qubit approaches using semiconductors promise upscalability and can take the form of a single electron transistor. We have designed, fabricated, and characterized single electron transistors in InAs, and separately in silicon, for the application of quantum computing. With the InAs single electron transistor, we have demonstrated one-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. Electrical transport data indicates a 15meV charging energy and a 20meV orbital energy spacing, which implies a quantum dot of 20nm in diameter. InAs is attractive due to its large electron Lande g-factor. With the silicon-based single electron transistor, we have demonstrated a structure that is similar to conventional silicon-based metal-oxide-semiconductor field effect transistors. The substrate is undoped and
Charge Transfer Dynamics from Photoexcited Semiconductor Quantum Dots
NASA Astrophysics Data System (ADS)
Zhu, Haiming; Yang, Ye; Wu, Kaifeng; Lian, Tianquan
2016-05-01
Understanding photoinduced charge transfer from nanomaterials is essential to the many applications of these materials. This review summarizes recent progress in understanding charge transfer from quantum dots (QDs), an ideal model system for investigating fundamental charge transfer properties of low-dimensional quantum-confined nanomaterials. We first discuss charge transfer from QDs to weakly coupled acceptors within the framework of Marcus nonadiabatic electron transfer (ET) theory, focusing on the dependence of ET rates on reorganization energy, electronic coupling, and driving force. Because of the strong electron-hole interaction, we show that ET from QDs should be described by the Auger-assisted ET model, which is significantly different from ET between molecules or from bulk semiconductor electrodes. For strongly quantum-confined QDs on semiconductor surfaces, the coupling can fall within the strong coupling limit, in which case the donor-acceptor interaction and ET properties can be described by the Newns-Anderson model of chemisorption. We also briefly discuss recent progress in controlling charge transfer properties in quantum-confined nanoheterostructures through wavefunction engineering and multiple exciton dissociation. Finally, we identify a few key areas for further research.
Electron states in semiconductor quantum dots
Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.
2014-11-28
In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.
Quantum tunneling between bent semiconductor nanowires
NASA Astrophysics Data System (ADS)
Sousa, A. A.; Chaves, Andrey; Pereira, T. A. S.; Farias, G. A.; Peeters, F. M.
2015-11-01
We theoretically investigate the electronic transport properties of two closely spaced L-shaped semiconductor quantum wires, for different configurations of the output channel widths as well as the distance between the wires. Within the effective-mass approximation, we solve the time-dependent Schrödinger equation using the split-operator technique that allows us to calculate the transmission probability, the total probability current, the conductance, and the wave function scattering between the energy subbands. We determine the maximum distance between the quantum wires below which a relevant non-zero transmission is still found. The transmission probability and the conductance show a strong dependence on the width of the output channel for small distances between the wires.
Quantum tunneling between bent semiconductor nanowires
Sousa, A. A.; Chaves, Andrey Farias, G. A.; Pereira, T. A. S.; Peeters, F. M.
2015-11-07
We theoretically investigate the electronic transport properties of two closely spaced L-shaped semiconductor quantum wires, for different configurations of the output channel widths as well as the distance between the wires. Within the effective-mass approximation, we solve the time-dependent Schrödinger equation using the split-operator technique that allows us to calculate the transmission probability, the total probability current, the conductance, and the wave function scattering between the energy subbands. We determine the maximum distance between the quantum wires below which a relevant non-zero transmission is still found. The transmission probability and the conductance show a strong dependence on the width of the output channel for small distances between the wires.
Biosynthesis of cadmium sulphide quantum semiconductor crystallites
NASA Astrophysics Data System (ADS)
Dameron, C. T.; Reese, R. N.; Mehra, R. K.; Kortan, A. R.; Carroll, P. J.; Steigerwald, M. L.; Brus, L. E.; Winge, D. R.
1989-04-01
NANOMETRE-SCALE semiconductor quantum crystallites exhibit size-dependent and discrete excited electronic states which occur at energies higher than the band gap of the corresponding bulk solid1-4. These crystallites are too small to have continuous energy bands, even though a bulk crystal structure is present. The onset of such quantum properties sets a fundamental limit to device miniaturization in microelectronics5. Structures with either one, two or all three dimensions on the nanometer scale are of particular interest in solid state physics6. We report here our discovery of the biosynthesis of quantum crystallites in yeasts Candida glabrata and Schizosaccharomyces pombe, cultured in the presence of cad-mium salts. Short chelating peptides of general structure (γ-Glu-Cys)n-Gly control the nucleation and growth of CdS crystallites to peptide-capped intracellular particles of diameter 20 Å. These quantum CdS crystallites are more monodisperse than CdS par-ticles synthesized chemically. X-ray data indicate that, at this small size, the CdS structure differs from that of bulk CdS and tends towards a six-coordinate rock-salt structure.
Semiconductor Lasers Containing Quantum Wells in Junctions
NASA Technical Reports Server (NTRS)
Yang, Rui Q.; Qiu, Yueming
2004-01-01
In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).
Optically Loaded Semiconductor Quantum Memory Register
NASA Astrophysics Data System (ADS)
Kim, Danny; Kiselev, Andrey A.; Ross, Richard S.; Rakher, Matthew T.; Jones, Cody; Ladd, Thaddeus D.
2016-02-01
We propose and analyze an optically loaded quantum memory that exploits capacitive coupling between self-assembled quantum-dot molecules and electrically gated quantum-dot molecules. The self-assembled dots are used for spin-photon entanglement, which is transferred to the gated dots for long-term storage or processing via a teleportation process heralded by single-photon detection. We illustrate a device architecture enabling this interaction and outline both its operation and fabrication. We provide self-consistent Poisson-Schrödinger simulations to establish the design viability, to refine the design, and to estimate the physical coupling parameters and their sensitivities to dot placement. The device we propose generates heralded copies of an entangled state between a photonic qubit and a solid-state qubit with a rapid reset time upon failure. The resulting fast rate of entanglement generation is of high utility for heralded quantum networking scenarios involving lossy optical channels.
Tailoring Magnetism in Bulk Semiconductors and Quantum Dots
NASA Astrophysics Data System (ADS)
Zutic, Igor
2008-03-01
Carrier-mediated magnetism in semiconductors shows important and potentially useful differences from their metallic counterparts [1]. For example, in magnetically doped semiconductors the change in carrier density induced by light or bias could be sufficient to turn the ferromagnetism on and off. However, there remain many important challenges to fully understand these materials. Our density functional theory study of Mn- doped II-IV-V2 chalcopyrites [2] reveals that variation of magnetic properties across 64 different materials cannot be explained by the dominant models of ferromagnetism in semiconductors. We observe no qualitative similarity with the suggested Curie temperature scaling with the inverse cube of the lattice constant [3]. In contrast to most of the theoretical studies, we explicitly include the temperature dependence of the carrier density and propose a model which permits analysis of the thermodynamic stability of the competing magnetic states [4]. As an example we analyze the stability of a possible reentrant ferromagnetic semiconductor and discuss the experimental support for this prediction. An increasing temperature leads to an increased carrier density such that the enhanced coupling between magnetic impurities results in the onset of ferromagnetism as temperature is raised. We also use the real space finite-temperature local spin density approximation to examine magnetically doped quantum dots in which the interplay of quantum confinement and strong Coulomb interactions can lead to novel possibilities to tailor magnetism. We reveal that, even at a fixed number of carriers, the gate induced changes in the screening [5] or deviations from isotropic quantum confinement [6] could allow for a reversible control of magnetism and switching between zero and finite magnetization. Such magnetic quantum dots could also provide versatile voltage-control of spin currents and spin filtering. The work done in collaboration with S. C. Erwin (Naval Research
Voltage-controlled quantum light from an atomically thin semiconductor
NASA Astrophysics Data System (ADS)
Chakraborty, Chitraleema; Kinnischtzke, Laura; Goodfellow, Kenneth M.; Beams, Ryan; Vamivakas, A. Nick
2015-06-01
Although semiconductor defects can often be detrimental to device performance, they are also responsible for the breadth of functionality exhibited by modern optoelectronic devices. Artificially engineered defects (so-called quantum dots) or naturally occurring defects in solids are currently being investigated for applications ranging from quantum information science and optoelectronics to high-resolution metrology. In parallel, the quantum confinement exhibited by atomically thin materials (semi-metals, semiconductors and insulators) has ushered in an era of flatland optoelectronics whose full potential is still being articulated. In this Letter we demonstrate the possibility of leveraging the atomically thin semiconductor tungsten diselenide (WSe2) as a host for quantum dot-like defects. We report that this previously unexplored solid-state quantum emitter in WSe2 generates single photons with emission properties that can be controlled via the application of external d.c. electric and magnetic fields. These new optically active quantum dots exhibit excited-state lifetimes on the order of 1 ns and remarkably large excitonic g-factors of 10. It is anticipated that WSe2 quantum dots will provide a novel platform for integrated solid-state quantum photonics and quantum information processing, as well as a rich condensed-matter physics playground with which to explore the coupling of quantum dots and atomically thin semiconductors.
Voltage-controlled quantum light from an atomically thin semiconductor.
Chakraborty, Chitraleema; Kinnischtzke, Laura; Goodfellow, Kenneth M; Beams, Ryan; Vamivakas, A Nick
2015-06-01
Although semiconductor defects can often be detrimental to device performance, they are also responsible for the breadth of functionality exhibited by modern optoelectronic devices. Artificially engineered defects (so-called quantum dots) or naturally occurring defects in solids are currently being investigated for applications ranging from quantum information science and optoelectronics to high-resolution metrology. In parallel, the quantum confinement exhibited by atomically thin materials (semi-metals, semiconductors and insulators) has ushered in an era of flatland optoelectronics whose full potential is still being articulated. In this Letter we demonstrate the possibility of leveraging the atomically thin semiconductor tungsten diselenide (WSe2) as a host for quantum dot-like defects. We report that this previously unexplored solid-state quantum emitter in WSe2 generates single photons with emission properties that can be controlled via the application of external d.c. electric and magnetic fields. These new optically active quantum dots exhibit excited-state lifetimes on the order of 1 ns and remarkably large excitonic g-factors of 10. It is anticipated that WSe2 quantum dots will provide a novel platform for integrated solid-state quantum photonics and quantum information processing, as well as a rich condensed-matter physics playground with which to explore the coupling of quantum dots and atomically thin semiconductors.
Electronic states of semiconductor-metal-semiconductor quantum-well structures
NASA Technical Reports Server (NTRS)
Huberman, M. L.; Maserjian, J.
1988-01-01
Quantum-size effects are calculated in thin layered semiconductor-metal-semiconductor structures using an ideal free-electron model for the metal layer. The results suggest new quantum-well structures having device applications. Structures with sufficiently high-quality interfaces should exhibit effects such as negative differential resistance due to tunneling between allowed states. Similarly, optical detection by intersubband absorption may be possible. Ultrathin metal layers are predicted to behave as high-density dopant sheets.
Exciton absorption of entangled photons in semiconductor quantum wells
NASA Astrophysics Data System (ADS)
Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team
2013-03-01
The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes
Integrated superconducting detectors on semiconductors for quantum optics applications
NASA Astrophysics Data System (ADS)
Kaniber, M.; Flassig, F.; Reithmaier, G.; Gross, R.; Finley, J. J.
2016-05-01
Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit nonclassical states of light for distributed photon-based quantum information technologies. In this article, we review our recent achievements on the growth, nanofabrication and integration of high-quality, superconducting niobium nitride thin films on optically active, semiconducting GaAs substrates and their patterning to realize highly efficient and ultra-fast superconducting detectors on semiconductor nanomaterials containing quantum dots. Our state-of-the-art detectors reach external detection quantum efficiencies up to 20 % for ~4 nm thin films and single-photon timing resolutions <72 ps. We discuss the integration of such detectors into quantum dot-loaded, semiconductor ridge waveguides, resulting in the on-chip, time-resolved detection of quantum dot luminescence. Furthermore, a prototype quantum optical circuit is demonstrated that enabled the on-chip generation of resonance fluorescence from an individual InGaAs quantum dot, with a linewidth <15 μeV displaced by 1 mm from the superconducting detector on the very same semiconductor chip. Thus, all key components required for prototype quantum photonic circuits with sources, optical components and detectors on the same chip are reported.
Electron Liquids in Semiconductor Quantum Structures
Aron Pinczuk
2009-05-25
The groups led by Stormer and Pinczuk have focused this project on goals that seek the elucidation of novel many-particle effects that emerge in two-dimensional electron systems (2DES) as the result from fundamental quantum interactions. This experimental research is conducted under extreme conditions of temperature and magnetic field. From the materials point of view, the ultra-high mobility systems in GaAs/AlGaAs quantum structures continue to be at the forefront of this research. The newcomer materials are based on graphene, a single atomic layer of graphite. The graphene research is attracting enormous attention from many communities involved in condensed matter research. The investigated many-particle phenomena include the integer and fractional quantum Hall effect, composite fermions, and Dirac fermions, and a diverse group of electron solid and liquid crystal phases. The Stormer group performed magneto-transport experiments and far-infrared spectroscopy, while the Pinczuk group explores manifestations of such phases in optical spectra.
Probing specific DNA sequences with luminescent semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Taylor, Jason R.; Nie, Shuming
2001-06-01
The development of new fluorescent probes has impacted many areas of research such as medical diagnostics, high-speed drug screening, and basic molecular biology. Main limitations to traditional organic fluorophores are their relatively weak intensities, short life times (eg., photobleaching), and broad emission spectra. The desire for more intense fluorescent probes with higher quality photostability and narrow emission wavelengths has led to the development and utilization of semiconductor quantum dots as a new label. In this work, we have modified semicondutor quantum dots (QD's) with synthetic oligonucleotides to probe a specific DNA target sequence both in solution as well as immobilized on a solid substrate. In the first approach, specific target sequences are detected in solution by using short oligonucleotide probes, which are covalently linked to semiconductor quantum dots. In the second approach, DNA target sequences are covalently attached to a glass substrate and detected using oligonucleotides linked to semiconductor quantum dots.
Semiconductor Quantum Rods as Single Molecule FluorescentBiological Labels
Fu, Aihua; Gu, Weiwei; Boussert, Benjamine; Koski, Kristie; Gerion, Daniele; Manna, Liberato; Le Gros, Mark; Larabell, Carolyn; Alivisatos, A. Paul
2006-05-29
In recent years, semiconductor quantum dots have beenapplied with great advantage in a wide range of biological imagingapplications. The continuing developments in the synthesis of nanoscalematerials and specifically in the area of colloidal semiconductornanocrystals have created an opportunity to generate a next generation ofbiological labels with complementary or in some cases enhanced propertiescompared to colloidal quantum dots. In this paper, we report thedevelopment of rod shaped semiconductor nanocrystals (quantum rods) asnew fluorescent biological labels. We have engineered biocompatiblequantum rods by surface silanization and have applied them fornon-specific cell tracking as well as specific cellular targeting. Theproperties of quantum rods as demonstrated here are enhanced sensitivityand greater resistance for degradation as compared to quantum dots.Quantum rods have many potential applications as biological labels insituations where their properties offer advantages over quantumdots.
Polariton interactions in semiconductor microcavities
NASA Astrophysics Data System (ADS)
Deveaud, Benoit
2016-10-01
In this review, we will try to summarize the results that we have obtained on the measurement of polariton interactions. We will describe here the samples, the experimental systems and some of the important results. We will also give a few highlights on the theoretical description of these results. One of the main topics of this review will be the observation of the Feshbach resonance for polaritons, and its interpretation through the coupling of two lower polaritons into a biexciton.
Huang, Hao; Dorn, August; Nair, Gautham P; Bulović, Vladimir; Bawendi, Moungi G
2007-12-01
We demonstrate reversible quenching of the photoluminescence from single CdSe/ZnS colloidal quantum dots embedded in thin films of the molecular organic semiconductor N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) in a layered device structure. Our analysis, based on current and charge carrier density, points toward field ionization as the dominant photoluminescence quenching mechanism. Blinking traces from individual quantum dots reveal that the photoluminescence amplitude decreases continuously as a function of increasing forward bias even at the single quantum dot level. In addition, we show that quantum dot photoluminescence is quenched by aluminum tris(8-hydroxyquinoline) (Alq3) in chloroform solutions as well as in thin solid films of Alq3 whereas TPD has little effect. This highlights the importance of chemical compatibility between semiconductor nanocrystals and surrounding organic semiconductors. Our study helps elucidate elementary interactions between quantum dots and organic semiconductors, knowledge needed for designing efficient quantum dot organic optoelectronic devices. PMID:18034504
Huang, Hao; Dorn, August; Nair, Gautham P; Bulović, Vladimir; Bawendi, Moungi G
2007-12-01
We demonstrate reversible quenching of the photoluminescence from single CdSe/ZnS colloidal quantum dots embedded in thin films of the molecular organic semiconductor N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) in a layered device structure. Our analysis, based on current and charge carrier density, points toward field ionization as the dominant photoluminescence quenching mechanism. Blinking traces from individual quantum dots reveal that the photoluminescence amplitude decreases continuously as a function of increasing forward bias even at the single quantum dot level. In addition, we show that quantum dot photoluminescence is quenched by aluminum tris(8-hydroxyquinoline) (Alq3) in chloroform solutions as well as in thin solid films of Alq3 whereas TPD has little effect. This highlights the importance of chemical compatibility between semiconductor nanocrystals and surrounding organic semiconductors. Our study helps elucidate elementary interactions between quantum dots and organic semiconductors, knowledge needed for designing efficient quantum dot organic optoelectronic devices.
A Quantum Dot with Spin-Orbit Interaction--Analytical Solution
ERIC Educational Resources Information Center
Basu, B.; Roy, B.
2009-01-01
The practical applicability of a semiconductor quantum dot with spin-orbit interaction gives an impetus to study analytical solutions to one- and two-electron quantum dots with or without a magnetic field.
Pseudorelativistic effects on solitons in quantum semiconductor plasma
NASA Astrophysics Data System (ADS)
Wang, Yunliang; Wang, Xiaodan; Jiang, Xiangqian
2015-04-01
A theory for nonlinear excitations in quantum plasmas is presented for narrow-gap semiconductors by considering the combined effects of quantum and pseudorelativity. The system is governed by a coupled Klein-Gordon equation for the collective wave functions of the conduction electrons and Poisson's equation for the electrostatic potential. This gives a closed system, including the effects of charge separation, quantum tunneling, and pseudorelativity. By choosing the typical parameters of semiconductor InSb, the quasistationary soliton solution, which is a multipeaked dark soliton, is obtained numerically and shows depleted electron densities correlated with a localized potential. The dynamical simulation result shows that the dark soliton is stable and has a multipeaked profile, which is consistent with the quasistationary solution. The present model and results may be useful in understanding the nonlinear properties of semiconductor plasma on an ultrafast time scale.
Pseudorelativistic effects on solitons in quantum semiconductor plasma.
Wang, Yunliang; Wang, Xiaodan; Jiang, Xiangqian
2015-04-01
A theory for nonlinear excitations in quantum plasmas is presented for narrow-gap semiconductors by considering the combined effects of quantum and pseudorelativity. The system is governed by a coupled Klein-Gordon equation for the collective wave functions of the conduction electrons and Poisson's equation for the electrostatic potential. This gives a closed system, including the effects of charge separation, quantum tunneling, and pseudorelativity. By choosing the typical parameters of semiconductor InSb, the quasistationary soliton solution, which is a multipeaked dark soliton, is obtained numerically and shows depleted electron densities correlated with a localized potential. The dynamical simulation result shows that the dark soliton is stable and has a multipeaked profile, which is consistent with the quasistationary solution. The present model and results may be useful in understanding the nonlinear properties of semiconductor plasma on an ultrafast time scale.
Ligands Slow Down Pure-Dephasing in Semiconductor Quantum Dots.
Liu, Jin; Kilina, Svetlana V; Tretiak, Sergei; Prezhdo, Oleg V
2015-09-22
It is well-known experimentally and theoretically that surface ligands provide additional pathways for energy relaxation in colloidal semiconductor quantum dots (QDs). They increase the rate of inelastic charge-phonon scattering and provide trap sites for the charges. We show that, surprisingly, ligands have the opposite effect on elastic electron-phonon scattering. Our simulations demonstrate that elastic scattering slows down in CdSe QDs passivated with ligands compared to that in bare QDs. As a result, the pure-dephasing time is increased, and the homogeneous luminescence line width is decreased in the presence of ligands. The lifetime of quantum superpositions of single and multiple excitons increases as well, providing favorable conditions for multiple excitons generation (MEG). Ligands reduce the pure-dephasing rates by decreasing phonon-induced fluctuations of the electronic energy levels. Surface atoms are most mobile in QDs, and therefore, they contribute greatly to the electronic energy fluctuations. The mobility is reduced by interaction with ligands. A simple analytical model suggests that the differences between the bare and passivated QDs persist for up to 5 nm diameters. Both low-frequency acoustic and high-frequency optical phonons participate in the dephasing processes in bare QDs, while low-frequency acoustic modes dominate in passivated QDs. The theoretical predictions regarding the pure-dephasing time, luminescence line width, and MEG can be verified experimentally by studying QDs with different surface passivation. PMID:26284384
Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets
NASA Astrophysics Data System (ADS)
Miravet, D.; Proetto, C. R.
2016-08-01
When two Landau levels are brought to a close coincidence between them and with the chemical potential in the integer quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignment changes. In this work, all possible crossings are analyzed theoretically for the particular case of semiconductor trilayer systems, using a variational Hartree-Fock approximation. The model includes tunneling between neighboring layers, bias, intralayer, and interlayer Coulomb interaction among the electrons. We have found that the general pseudospin anisotropy classification scheme used in bilayers applies also to the trilayer situation, with the simple crossing corresponding to an easy-axis ferromagnetic anisotropy analogy, and the collapse case corresponding to an easy-plane ferromagnetic analogy. An isotropic case is also possible, with the levels just crossing or collapsing depending on the filling factor and the quantum numbers of the two nearby levels. While our results are valid for any integer filling factor ν (=1 ,2 ,3 ,... ), we have analyzed in detail the crossings at ν =3 and 4, and we have given clear predictions that will help in their experimental search. In particular, the present calculations suggest that by increasing the bias, the trilayer system at these two filling factors can be driven from an easy-plane anisotropy regime to an easy-axis regime, and then can be driven back to the easy-plane regime. This kind of reentrant behavior is a unique feature of the trilayers, compared with the bilayers.
Interactions between semiconductor nanowires and living cells.
Prinz, Christelle N
2015-06-17
Semiconductor nanowires are increasingly used for biological applications and their small dimensions make them a promising tool for sensing and manipulating cells with minimal perturbation. In order to interface cells with nanowires in a controlled fashion, it is essential to understand the interactions between nanowires and living cells. The present paper reviews current progress in the understanding of these interactions, with knowledge gathered from studies where living cells were interfaced with vertical nanowire arrays. The effect of nanowires on cells is reported in terms of viability, cell-nanowire interface morphology, cell behavior, changes in gene expression as well as cellular stress markers. Unexplored issues and unanswered questions are discussed.
Quantum statistical theory of semiconductor junctions in thermal equilibrium
NASA Technical Reports Server (NTRS)
Von Roos, O.
1977-01-01
Free carrier and electric field distributions of one-dimensional semiconductor junctions are evaluated using a quantum mechanical phase-space distribution and its corresponding Boltzmann equation. Attention is given to quantum and exchange corrections in cases of high doping concentrations when carrier densities become degenerate. Quantitative differences between degenerate and classical junction characteristics, e.g., maximum electric field and built-in voltage and carrier concentration within the transition region, are evaluated numerically.
Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures
Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.
2016-03-01
Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.
NASA Technical Reports Server (NTRS)
Li, Jian-Zhong; Kolokolov, Kanstantin I.; Ning, Cun-Zheng
2003-01-01
Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.
Theoretical Studies of the Optoelectronic Properties of Semiconductor Quantum Wells.
NASA Astrophysics Data System (ADS)
Chao, Calvin Yi-Ping
The valence-band structure of a semiconductor quantum well is calculated based on the multiband effective -mass theory. A unitary transformation is found to diagonalize the six-by-six Luttinger-Kohn Hamiltonian into two three -by-three blocks, making the computation more efficient. With this new formulation, the effect of strain on the band structure is studied systematically for both the compressional and tensile strain. The importance of the coupling between the heavy-hole, light-hole bands and the spin-orbit split -off bands is especially pointed out. The resonant tunneling of holes through a double -barrier structure is investigated using a transfer-matrix technique. It is shown that the strong mixing between the heavy holes and the light holes results in a totally different I-V characteristic from that predicted previously by the parabolic-band model. The exciton equation in momentum space is solved by using a modified Gaussian quadrature method. The exact solutions for a pure-two-dimensional exciton are derived by means of the Mehler-Fock transform, and the accuracy of the quadrature method is checked by comparing the numerical solutions against the exact solutions. A complete theory for quantum-well excitons is developed taking into account the effects of the valence -band mixing and the intersubband Coulomb interaction. Optical absorption spectra are calculated and compared to experimental data. The comparison demonstrates that the theory explains very well the quantum-confined Stark effect, the polarization selection rule, the coupling between the interwell and intrawell excitons in a multiwell structure, and the anticrossing between the ground state of a light-hole exciton and the excited state of a heavy-hole exciton observed experimentally.
The quantum hydrodynamic model for semiconductor devices
Gardner, C.L. )
1994-04-01
The classical hydrodynamic equations can be extended to include quantum effects by incorporating the first quantum corrections. The full three-dimensional quantum hydrodynamic (QHD) model is derived for the first time by a moment expansion of the Wigner-Boltzmann equations. The QHD conservation laws have the same form as the classical hydrodynamic equations, but the energy density and stress tensor have additional quantum terms. These quantum terms allow particles to tunnel through potential barriers and to build up in potential wells. The three-dimensional QHD transport equations are mathematically classified as having two Schroedinger modes, two hyperbolic modes, and one parabolic mode. The one-dimensional steady-state QHD equations are discretized in conservation form using the second upwind method. Simulations of a resonant tunneling diode are presented that show charge buildup in the quantum well and negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the full QHD equations to show NDR in the resonant tunneling diode. The computed current-voltage curve agrees quantitatively with experimental measurements. NDR interpreted in terms of the time spent by electrons in the quantum well.
A quantum energy transport model for semiconductor device simulation
Sho, Shohiro; Odanaka, Shinji
2013-02-15
This paper describes numerical methods for a quantum energy transport (QET) model in semiconductors, which is derived by using a diffusion scaling in the quantum hydrodynamic (QHD) model. We newly drive a four-moments QET model similar with a classical ET model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing numerical schemes and an iterative solution method with a relaxation method. Numerical simulations of electron transport in a scaled MOSFET device are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.
Semiconductor quantum wells: old technology or new device functionalities
NASA Astrophysics Data System (ADS)
Kolbas, R. M.; Lo, Y. C.; Hsieh, K. Y.; Lee, J. H.; Reed, F. E.; Zhang, D.; Zhang, T.
2009-08-01
The introduction of semiconductor quantum wells in the 1970s created a revolution in optoelectronic devices. A large fraction of today's lasers and light emitting diodes are based on quantum wells. It has been more than 30 years but novel ideas and new device functions have recently been demonstrated using quantum well heterostructures. This paper provides a brief overview of the subject and then focuses on the physics of quantum wells that the lead author believes holds the key to new device functionalities. The data and figures contained within are not new. They have been assembled from 30 years of work. They are presented to convey the story of why quantum wells continue to fuel the engine that drives the semiconductor optoelectronic business. My apologies in advance to my students and co-workers that contributed so much that could not be covered in such a short manuscript. The explanations provided are based on the simplest models possible rather than the very sophisticated mathematical models that have evolved over many years. The intended readers are those involved with semiconductor optoelectronic devices and are interested in new device possibilities.
Generation of infrared entangled light in asymmetric semiconductor quantum wells
NASA Astrophysics Data System (ADS)
Lü, Xin-You; Wu, Jing; Zheng, Li-Li; Huang, Pei
2010-12-01
We proposed a scheme to achieve two-mode CV entanglement with the frequencies of entangled modes in the infrared range in an asymmetric semiconductor double-quantum-wells (DQW), where the required quantum coherence is obtained by inducing the corresponding intersubband transitions (ISBTs) with a classical field. By numerically simulating the dynamics of system, we show that the entanglement period can be prolonged via enhancing the intensity of classical field, and the generation of entanglement doesn't depend intensively on the initial condition of system in our scheme. Moreover, we also show that a bipartite entanglement amplifier can be realized in our scheme. The present research provides an efficient approach to achieve infrared entangled light in the semiconductor nanostructure, which may have significant impact on the progress of solid-state quantum information theory.
Introducing and manipulating magnetic dopant exchange interactions in semiconductor nanowires
NASA Astrophysics Data System (ADS)
Hegde, Manu; Hosein, Ian D.; Sabergharesou, Tahereh; Farvid, Shokouh S.; Radovanovic, Pavle V.
2013-09-01
The ability to control both spin and charge degrees of freedom in semiconductor nanostructrures is at heart of spintronic and quantum information technologies. Magnetically-doped semiconductor nanowires have emerged as a promising platform for spintronics, which warrants the exploration of their synthesis, electronic structure, and magnetic properties. Here we demonstrate the preparation of manganese-doped GaN and SnO2 nanowires by chemical vapor deposition and solvothermal methods, respectively. The investigation of both systems by electron microscopy and x-ray absorption spectroscopy at ensemble and single nanowire levels indicates that manganese dopants exist in a dual oxidation state, Mn2+ and Mn3+, with Mn2+ being the majority species. X-ray magnetic circular dichroism studies of individual nanowires suggest ferromagnetic interactions of manganese dopants, and the nanowire orientation-dependent magnetization owing to the magnetocrystalline anisotropy. The results of these studies demonstrate quantitative determination of the dopant electronic structure at the molecular level, and allow for a prediction of the magnetic properties of diluted magnetic semiconductor nanowires based on their orientation and geometry.
Enhancement of photon intensity in forced coupled quantum wells inside a semiconductor microcavity.
Eleuch, Hichem; Prasad, Awadhesh; Rotter, Ingrid
2013-02-01
We study numerically the photon emission from a semiconductor microcavity containing N≥2 quantum wells under the influence of a periodic external forcing. The emission is determined by the interplay between external forcing and internal interaction between the wells. While the external forcing synchronizes the periodic motion, the internal interaction destroys it. The nonlinear term of the Hamiltonian supports the synchronization. The numerical results show a jump of the photon intensity to very large values at a certain critical value of the external forcing when the number of quantum wells is not too large. We discuss the dynamics of the system across this transition. PMID:23496600
NASA Astrophysics Data System (ADS)
Podzimski, Reinold; Duc, Huynh Thanh; Priyadarshi, Shekhar; Schmidt, Christian; Bieler, Mark; Meier, Torsten
2016-03-01
Using a microscopic theory that combines k.p band structure calculations with multisubband semiconductor Bloch equations we are capable of computing coherent optically-induced rectification, injection, and shift currents in semiconductors and semiconductor nanostructures. A 14-band k.p theory has been employed to obtain electron states in non-centrosymmetric semiconductor systems. Numerical solutions of the multisubband Bloch equations provide a detailed and transparent description of the dynamics of the material excitations in terms of interband and intersubband polarizations/coherences and occupations. Our approach allows us to calculate and analyze photocurrents in the time and the frequency domains for bulk as well as quantum well and quantum wire systems with various growth directions. As examples, we present theoretical results on the rectification and shift currents in bulk GaAs and GaAs-based quantum wells. Moreover, we compare our results with experiments on shift currents. In the experiments the terahertz radiation emitted from the transient currents is detected via electro-optic sampling. This comparison is important from two perspectives. First, it helps to validate the theoretical model. Second, it allows us to investigate the microscopic origins of interesting features observed in the experiments.
Chemla, Daniel S.; Shah, Jagdeep
2000-01-01
The large dielectric constant and small effective mass in a semiconductor allows a description of its electronic states in terms of envelope wavefunctions whose energy, time, and length scales are mesoscopic, i.e., halfway between those of atomic and those of condensed matter systems. This property makes it possible to demonstrate and investigate many quantum mechanical, many-body, and quantum kinetic phenomena with tabletop experiments that would be nearly impossible in other systems. This, along with the ability to custom-design semiconductor nanostructures, makes semiconductors an ideal laboratory for experimental investigations. We present an overview of some of the most exciting results obtained in semiconductors in recent years using the technique of ultrafast nonlinear optical spectrocopy. These results show that Coulomb correlation plays a major role in semiconductors and makes them behave more like a strongly interacting system than like an atomic system. The results provide insights into the physics of strongly interacting systems that are relevant to other condensed matter systems, but not easily accessible in other materials. PMID:10716981
Bautista, Jessica E Q; Lyra, Marcelo L; Lima, R P A
2014-11-17
We study the exciton contribution to the third-order optical susceptibility of one-dimensional semiconductor quantum dots and show that the screening of the electron-hole interaction has a strong influence on the nonlinear optical properties in the weak confinement regime. Based on a density matrix formulation, we estimate the spectrum of the third-order optical susceptibility and its contribution to the refraction index and absorption coefficient. In particular, we show that the multipeaked spectrum of the nonlinear susceptibility, which results from the hydrogenoid character of the exciton eigenstates for a purely Coulombian electron-hole coupling, is reverted towards a single peaked structure as the interaction becomes strongly screened, thus leading to a substantial enhancement of the nonlinear optical properties of semiconductor quantum dots.
Quantum Hall effect in semiconductor systems with quantum dots and antidots
Beltukov, Ya. M.; Greshnov, A. A.
2015-04-15
The integer quantum Hall effect in systems of semiconductor quantum dots and antidots is studied theoretically as a factor of temperature. It is established that the conditions for carrier localization in quantum-dot systems favor the observation of the quantum Hall effect at higher temperatures than in quantum-well systems. The obtained numerical results show that the fundamental plateau corresponding to the transition between the ground and first excited Landau levels can be retained up to a temperature of T ∼ 50 K, which is an order of magnitude higher than in the case of quantum wells. Implementation of the quantum Hall effect at such temperatures requires quantum-dot systems with controllable characteristics, including the optimal size and concentration and moderate geometrical and composition fluctuations. In addition, ordered arrangement is desirable, hence quantum antidots are preferable.
Electrostatic enhancement of light emitted by semiconductor quantum well
NASA Astrophysics Data System (ADS)
Krokhin, A.; Neogi, A.; Llopis, A.; Mahat, M.; Gumen, L.; Pereira, S.; Watson, I.
2015-10-01
Carrier dynamics in metal-semiconductor structures is driven by electrodynamic coupling of carriers to the evanescent field of surface plasmons. Useful modifications in electron and hole dynamics due to presence of metallic inclusions show promise for applications from light emitters to communications. However, this picture does not include contributions from electrostatics. We propose here an electrostatic mechanism for enhancement of light radiated from semiconductor emitter which is comparable in effect to plasmonic mechanism. Arising from Coulomb attraction of e-h pairs to their electrostatic images in metallic nanoparticles, this mechanism produces large carrier concentrations near the nanoparticle. A strong inhomogeneity in the carrier distribution and an increase in the internal quantum efficiency are predicted. In our experiments, this manifests as emission enhancement in InGaN quantum well (QW) radiating in the near-UV region. This fundamental mechanism provides a new perspective for improving the efficiency of broadband light emitters.
Static gain saturation in quantum dot semiconductor optical amplifiers.
Meuer, Christian; Kim, Jungho; Laemmlin, Matthias; Liebich, Sven; Capua, Amir; Eisenstein, Gadi; Kovsh, Alexey R; Mikhrin, Sergey S; Krestnikov, Igor L; Bimberg, Dieter
2008-05-26
Measurements of saturated amplified spontaneous emission-spectra of quantum dot semiconductor optical amplifiers demonstrate efficient replenishment of the quantum-dot ground state population from excited states. This saturation behavior is perfectly modeled by a rate equation model. We examined experimentally the dependence of saturation on the drive current and the saturating optical pump power as well as on the pump wavelength. A coherent noise spectral hole is observed with which we assess dynamical properties and propose optimization of the SOA operating parameters for high speed applications.
Low frequency hybrid instability in quantum magneto semiconductor plasmas
NASA Astrophysics Data System (ADS)
Rasheed, A.; Jamil, M.; Areeb, F.; Siddique, M.; Salimullah, M.
2016-05-01
The excitation of electrostatic, comparatively low frequency, lower-hybrid waves (LHWs) induced by electron beam in semiconductor plasma is examined using a quantum hydrodynamic model. Various quantum effects are taken into account including the recoil effect, Fermi degenerate pressure, and exchange-correlation potential. The effects of different parameters like the electron-to-hole number density ratio, scaled electron beam temperature and streaming speed, propagation angle and cyclotron frequency over the growth, and phase speed of LHWs are investigated. It is noticed that an increase in the electron number density and streaming speed enhance the instability. Similar effects are observed on decreasing the propagation angle with magnetic field.
Quantum information processing with electronic and nuclear spins in semiconductors
NASA Astrophysics Data System (ADS)
Klimov, Paul Victor
Traditional electronic and communication devices operate by processing binary information encoded as bits. Such digital devices have led to the most advanced technologies that we encounter in our everyday lives and they influence virtually every aspect of our society. Nonetheless, there exists a much richer way to encode and process information. By encoding information in quantum mechanical states as qubits, phenomena such as coherence and entanglement can be harnessed to execute tasks that are intractable to digital devices. Under this paradigm, it should be possible to realize quantum computers, quantum communication networks and quantum sensors that outperform their classical counterparts. The electronic spin states of color-center defects in the semiconductor silicon carbide have recently emerged as promising qubit candidates. They have long-lived quantum coherence up to room temperature, they can be controlled with mature magnetic resonance techniques, and they have a built-in optical interface operating near the telecommunication bands. In this thesis I will present two of our contributions to this field. The first is the electric-field control of electron spin qubits. This development lays foundation for quantum electronics that operate via electrical gating, much like traditional electronics. The second is the universal control and entanglement of electron and nuclear spin qubits in an ensemble under ambient conditions. This development lays foundation for quantum devices that have a built-in redundancy and can operate in real-world conditions. Both developments represent important steps towards practical quantum devices in an electronic grade material.
Modulational interactions in quantum plasmas
NASA Astrophysics Data System (ADS)
Sayed, F.; Vladimirov, S. V.; Tyshetskiy, Yu.; Ishihara, O.
2013-07-01
A formalism for treating modulational interactions of electrostatic fields in collisionless quantum plasmas is developed, based on the kinetic Wigner-Poisson model of quantum plasma. This formalism can be used in a range of problems of nonlinear interaction between electrostatic fields in a quantum plasma, such as development of turbulence, self-organization, as well as transition from the weak turbulent state to strong turbulence. In particular, using this formalism, we obtain the kinetic quantum Zakharov equations that describe nonlinear coupling of high frequency Langmuir waves to low frequency plasma density variations, for cases of non-degenerate and degenerate plasma electrons.
Modulational interactions in quantum plasmas
Sayed, F.; Tyshetskiy, Yu.; Vladimirov, S. V.; Ishihara, O.
2013-07-15
A formalism for treating modulational interactions of electrostatic fields in collisionless quantum plasmas is developed, based on the kinetic Wigner-Poisson model of quantum plasma. This formalism can be used in a range of problems of nonlinear interaction between electrostatic fields in a quantum plasma, such as development of turbulence, self-organization, as well as transition from the weak turbulent state to strong turbulence. In particular, using this formalism, we obtain the kinetic quantum Zakharov equations that describe nonlinear coupling of high frequency Langmuir waves to low frequency plasma density variations, for cases of non-degenerate and degenerate plasma electrons.
Spin dynamics of an individual Cr atom in a semiconductor quantum dot under optical excitation
NASA Astrophysics Data System (ADS)
Lafuente-Sampietro, A.; Utsumi, H.; Boukari, H.; Kuroda, S.; Besombes, L.
2016-08-01
We studied the spin dynamics of a Cr atom incorporated in a II-VI semiconductor quantum dot using photon correlation techniques. We used recently developed singly Cr-doped CdTe/ZnTe quantum dots to access the spin of an individual magnetic atom. Auto-correlation of the photons emitted by the quantum dot under continuous wave optical excitation reveals fluctuations of the localized spin with a timescale in the 10 ns range. Cross-correlation gives quantitative transfer time between Cr spin states. A calculation of the time dependence of the spin levels population in Cr-doped quantum dots shows that the observed spin dynamics is dominated by the exciton-Cr interaction. These measurements also provide a lower bound in the 20 ns range for the intrinsic Cr spin relaxation time.
Semiconductor-inspired design principles for superconducting quantum computing.
Shim, Yun-Pil; Tahan, Charles
2016-01-01
Superconducting circuits offer tremendous design flexibility in the quantum regime culminating most recently in the demonstration of few qubit systems supposedly approaching the threshold for fault-tolerant quantum information processing. Competition in the solid-state comes from semiconductor qubits, where nature has bestowed some very useful properties which can be utilized for spin qubit-based quantum computing. Here we begin to explore how selective design principles deduced from spin-based systems could be used to advance superconducting qubit science. We take an initial step along this path proposing an encoded qubit approach realizable with state-of-the-art tunable Josephson junction qubits. Our results show that this design philosophy holds promise, enables microwave-free control, and offers a pathway to future qubit designs with new capabilities such as with higher fidelity or, perhaps, operation at higher temperature. The approach is also especially suited to qubits on the basis of variable super-semi junctions. PMID:26983379
Semiconductor-inspired design principles for superconducting quantum computing.
Shim, Yun-Pil; Tahan, Charles
2016-03-17
Superconducting circuits offer tremendous design flexibility in the quantum regime culminating most recently in the demonstration of few qubit systems supposedly approaching the threshold for fault-tolerant quantum information processing. Competition in the solid-state comes from semiconductor qubits, where nature has bestowed some very useful properties which can be utilized for spin qubit-based quantum computing. Here we begin to explore how selective design principles deduced from spin-based systems could be used to advance superconducting qubit science. We take an initial step along this path proposing an encoded qubit approach realizable with state-of-the-art tunable Josephson junction qubits. Our results show that this design philosophy holds promise, enables microwave-free control, and offers a pathway to future qubit designs with new capabilities such as with higher fidelity or, perhaps, operation at higher temperature. The approach is also especially suited to qubits on the basis of variable super-semi junctions.
Semiconductor-inspired design principles for superconducting quantum computing
Shim, Yun-Pil; Tahan, Charles
2016-01-01
Superconducting circuits offer tremendous design flexibility in the quantum regime culminating most recently in the demonstration of few qubit systems supposedly approaching the threshold for fault-tolerant quantum information processing. Competition in the solid-state comes from semiconductor qubits, where nature has bestowed some very useful properties which can be utilized for spin qubit-based quantum computing. Here we begin to explore how selective design principles deduced from spin-based systems could be used to advance superconducting qubit science. We take an initial step along this path proposing an encoded qubit approach realizable with state-of-the-art tunable Josephson junction qubits. Our results show that this design philosophy holds promise, enables microwave-free control, and offers a pathway to future qubit designs with new capabilities such as with higher fidelity or, perhaps, operation at higher temperature. The approach is also especially suited to qubits on the basis of variable super-semi junctions. PMID:26983379
Semiconductor-inspired design principles for superconducting quantum computing
NASA Astrophysics Data System (ADS)
Shim, Yun-Pil; Tahan, Charles
2016-03-01
Superconducting circuits offer tremendous design flexibility in the quantum regime culminating most recently in the demonstration of few qubit systems supposedly approaching the threshold for fault-tolerant quantum information processing. Competition in the solid-state comes from semiconductor qubits, where nature has bestowed some very useful properties which can be utilized for spin qubit-based quantum computing. Here we begin to explore how selective design principles deduced from spin-based systems could be used to advance superconducting qubit science. We take an initial step along this path proposing an encoded qubit approach realizable with state-of-the-art tunable Josephson junction qubits. Our results show that this design philosophy holds promise, enables microwave-free control, and offers a pathway to future qubit designs with new capabilities such as with higher fidelity or, perhaps, operation at higher temperature. The approach is also especially suited to qubits on the basis of variable super-semi junctions.
Peptide linkers for the assembly of semiconductor quantum dot bioconjugates
NASA Astrophysics Data System (ADS)
Boeneman, Kelly; Mei, Bing C.; Deschamps, Jeffrey R.; Delehanty, James B.; Mattoussi, Hedi; Medintz, Igor
2009-02-01
The use of semiconductor luminescent quantum dots for the labeling of biomolecules is rapidly expanding, however it still requires facile methods to attach functional globular proteins to biologically optimized quantum dots. Here we discuss the development of controlled variable length peptidyl linkers to attach biomolecules to poly(ethylene) glycol (PEG) coated quantum dots for both in vitro and in vivo applications. The peptides chosen, β-sheets and alpha helices are appended to polyhistidine sequences and this allows for control of the ratio of peptide bioconjugated to QD and the distance from QD to the biomolecule. Recombinant DNA engineering, bacterial peptide expression and Ni-NTA purification of histidine labeled peptides are utilized to create the linkers. Peptide length is confirmed by in vitro fluorescent resonance energy transfer (FRET).
Quantum effects on compressional Alfven waves in compensated semiconductors
Amin, M. R.
2015-03-15
Amplitude modulation of a compressional Alfven wave in compensated electron-hole semiconductor plasmas is considered in the quantum magnetohydrodynamic regime in this paper. The important ingredients of this study are the inclusion of the particle degeneracy pressure, exchange-correlation potential, and the quantum diffraction effects via the Bohm potential in the momentum balance equations of the charge carriers. A modified nonlinear Schrödinger equation is derived for the evolution of the slowly varying amplitude of the compressional Alfven wave by employing the standard reductive perturbation technique. Typical values of the parameters for GaAs, GaSb, and GaN semiconductors are considered in analyzing the linear and nonlinear dispersions of the compressional Alfven wave. Detailed analysis of the modulation instability in the long-wavelength regime is presented. For typical parameter ranges of the semiconductor plasmas and at the long-wavelength regime, it is found that the wave is modulationally unstable above a certain critical wavenumber. Effects of the exchange-correlation potential and the Bohm potential in the wave dynamics are also studied. It is found that the effect of the Bohm potential may be neglected in comparison with the effect of the exchange-correlation potential in the linear and nonlinear dispersions of the compressional Alfven wave.
Molecular Spintronics: Wiring Spin Coherence between Semiconductor Quantum Dots
NASA Astrophysics Data System (ADS)
Ouyang, Min
2004-03-01
Semiconductor quantum dots (QDs) are attractive candidates for scalable solid state implementations of quantum information processing based on electron spin states, where a crucial requirement for practical devices is to have efficient and tunable spin coupling between them. We focus on recent femtosecond time-resolved Faraday rotation studies of self-assembled multilayer spintronic devices based on colloidal quantum dots bridged by conjugated molecules (M. Ouyang et al., Science 301, 1074 (2003)). The data reveal the instantaneous transfer of spin coherence through conjugated molecular bridges spanning quantum dots of different size over a broad range of temperature. The room temperature spin transfer efficiency exceeds 20%, which approximately doubles the value measured at T=4.5K. A molecular π-orbital mediated spin coherence transfer mechanism is proposed to provide a qualitative insight into the experimental observations, suggesting a correlation between the stereochemistry of molecules and the transfer process. The results show that conjugated molecules can be used not only as physical links for the assembly of functional networks, but also as efficient channels for shuttling quantum information. This class of structures may be useful as two-spin quantum devices operating at ambient temperatures and may offer promising opportunities for future versatile molecule-based spintronic technologies.
Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.
Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani
2016-07-01
Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response. PMID:27295453
Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.
Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani
2016-07-01
Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.
Multiwavelength quantum-dot semiconductor fiber ring laser
NASA Astrophysics Data System (ADS)
Lu, Z. G.; Liu, J. R.; Zhang, X. P.; Raymond, S.; Poole, P. J.; Barrios, P. J.; Poitras, D.; Haffouz, S.; Wasilewski, Z.; Pakulski, G.
2008-11-01
We have demonstrated a novel approach to achieve a stable multi-wavelength laser system (MWLS) which is making use of a quantum dot semiconductor optical amplifier (QD SOA) as a highly birefringence material and an optical polarizer at the same time. Both the channel frequency spacing and the central lasing wavelength of the QD MWLS can be accurately set by using the desired-designed QD SOA with the certain operation conditions and by setting the polarization controller properly. The detailed working principles and the experimental results have been reported in this paper. The proposed QD MWLS technology can be used for characterizing the intrinsic properties of the QD semiconductor waveguide materials that could also be used for spectral narrowing of a laser system. We have experimentally confirmed that the QD SOA is highly inhomogeneous gain material as compared with QW SOA.
Activation of molecular catalysts using semiconductor quantum dots
Meyer, Thomas J.; Sykora, Milan; Klimov, Victor I.
2011-10-04
Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.
Potential energy surface of excited semiconductors: Graphene quantum dot and BODIPY
NASA Astrophysics Data System (ADS)
Colherinhas, Guilherme; Fileti, Eudes Eterno; Chaban, Vitaly V.
2016-08-01
Binding energy (BE) is an important descriptor in chemistry, which determines thermodynamics and phase behavior of a given substance. BE between two molecules is not directly accessible from the experiment. It has to be reconstructed from cohesive energies, vaporization heats, etc. We report BE for the excited states of two semiconductor molecules - boron-dipyrromethene (BODIPY) and graphene quantum dot (GQD) - with water. We show, for the first time, that excitation increases BE twofold at an optimal separation (energy minimum position), whereas higher separations lead to higher differences. Interestingly, the effects of excitation are similar irrespective of the dominant binding interactions (van der Waals or electrostatic) in the complex. This new knowledge is important for simulations of the excited semiconductors by simplified interaction functions.
Polaron mass of charge carriers in semiconductor quantum wells
Maslov, A. Yu. Proshina, O. V.
2015-10-15
A theory of the interaction of charge carriers with optical phonons in a quantum well is developed with consideration for interface optical phonons. The dependence of the polaron effective mass on the quantum-well dimensions and dielectric characteristics of barriers is analyzed in detail. It is shown that, in narrow quantum wells, a quasi-two-dimensional polaron can be formed. In this case, however, the interaction parameters are defined by the charge-carrier effective mass in the quantum well and by the frequencies of interface optical phonons. If barriers are made of a nonpolar material, the polaron effective mass depends on the quantum-well width. As the quantum-well width is increased, a new mechanism of enhancement of the electron–phonon interaction develops. The mechanism is implemented, if the optical phonon energy is equal to the energy of one of the electronic transitions. This condition yields an unsteady dependence of the polaron effective mass on the quantum-well width.
INTERACTING QUANTUM SPIN CHAINS
ZHELUDEV,A.
2001-09-09
A brief review of recent advances in neutron scattering studies of low-dimensional quantum magnets is followed by a particular example. The separation of single-particle and continuum states in the weakly-coupled S = l/2 chains system BaCu{sub 2}Si{sub 2}O{sub 7} is described in some detail.
Strong coupling among semiconductor quantum dots induced by a metal nanoparticle
2012-01-01
Based on cavity quantum electrodynamics (QED), we investigate the light-matter interaction between surface plasmon polaritons (SPP) in a metal nanoparticle (MNP) and the excitons in semiconductor quantum dots (SQDs) in an SQD-MNP coupled system. We propose a quantum transformation method to strongly reveal the exciton energy shift and the modified decay rate of SQD as well as the coupling among SQDs. To obtain these parameters, a simple system composed of an SQD, an MNP, and a weak signal light is designed. Furthermore, we consider a model to demonstrate the coupling of two SQDs mediated by SPP field under two cases. It is shown that two SQDs can be entangled in the presence of MNP. A high concurrence can be achieved, which is the best evidence that the coupling among SQDs induced by SPP field in MNP. This scheme may have the potential applications in all-optical plasmon-enhanced nanoscale devices. PMID:22297024
Semiconductor quantum dot scintillation under gamma-ray irradiation
Letant, S E; Wang, T
2006-08-23
We recently demonstrated the ability of semiconductor quantum dots to convert alpha radiation into visible photons. In this letter, we report on the scintillation of quantum dots under gamma-ray irradiation, and compare the energy resolution of the 59 keV line of Americium 241 obtained with our quantum dot-glass nanocomposite material to that of a standard sodium iodide scintillator. A factor 2 improvement is demonstrated experimentally and interpreted theoretically using a combination of energy-loss and photon transport models. These results demonstrate the potential of quantum dots for room-temperature gamma-ray detection, which has applications in medical imaging, environmental monitoring, as well as security and defense. Present technology in gamma radiation detection suffers from flexibility and scalability issues. For example, bulk Germanium provides fine energy resolution (0.2% energy resolution at 1.33 MeV) but requires operation at liquid nitrogen temperature. On the other hand, Cadmium-Zinc-Telluride is a good room temperature detector ( 1% at 662 keV) but the size of the crystals that can be grown is limited to a few centimeters in each direction. Finally, the most commonly used scintillator, Sodium Iodide (NaI), can be grown as large crystals but suffers from a lack of energy resolution (7% energy resolution at 662 keV). Recent advancements in nanotechnology6-10 have provided the possibility of controlling materials synthesis at the molecular level. Both morphology and chemical composition can now be manipulated, leading to radically new material properties due to a combination of quantum confinement and surface to volume ratio effects. One of the main consequences of reducing the size of semiconductors down to nanometer dimensions is to increase the energy band gap, leading to visible luminescence, which suggests that these materials could be used as scintillators. The visible band gap of quantum dots would also ensure both efficient photon counting
Quantum simulation with interacting photons
NASA Astrophysics Data System (ADS)
Hartmann, Michael J.
2016-10-01
Enhancing optical nonlinearities so that they become appreciable on the single photon level and lead to nonclassical light fields has been a central objective in quantum optics for many years. After this has been achieved in individual micro-cavities representing an effectively zero-dimensional volume, this line of research has shifted its focus towards engineering devices where such strong optical nonlinearities simultaneously occur in extended volumes of multiple nodes of a network. Recent technological progress in several experimental platforms now opens the possibility to employ the systems of strongly interacting photons, these give rise to as quantum simulators. Here we review the recent development and current status of this research direction for theory and experiment. Addressing both, optical photons interacting with atoms and microwave photons in networks of superconducting circuits, we focus on analogue quantum simulations in scenarios where effective photon-photon interactions exceed dissipative processes in the considered platforms.
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.
Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A
2014-07-01
The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).
Quantum spintronics: engineering and manipulating atom-like spins in semiconductors.
Awschalom, David D; Bassett, Lee C; Dzurak, Andrew S; Hu, Evelyn L; Petta, Jason R
2013-03-01
The past decade has seen remarkable progress in isolating and controlling quantum coherence using charges and spins in semiconductors. Quantum control has been established at room temperature, and electron spin coherence times now exceed several seconds, a nine-order-of-magnitude increase in coherence compared with the first semiconductor qubits. These coherence times rival those traditionally found only in atomic systems, ushering in a new era of ultracoherent spintronics. We review recent advances in quantum measurements, coherent control, and the generation of entangled states and describe some of the challenges that remain for processing quantum information with spins in semiconductors.
QCAD simulation and optimization of semiconductor double quantum dots
Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina; Muller, Richard Partain; Salinger, Andrew Gerhard; Young, Ralph Watson
2013-12-01
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltages in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design
Dynamical calculation of third-harmonic generation in a semiconductor quantum well
NASA Astrophysics Data System (ADS)
Guazzotti, Stefano; Pusch, Andreas; Reiter, Doris E.; Hess, Ortwin
2016-09-01
Nonlinear phenomena in optically excited semiconductor structures are of high interest. Here we develop a model capable of studying the dynamics of the photoexcited carriers, including Coulomb interaction on a Hartree-Fock level, on the same footing as the dynamics of the light field impinging on an arbitrary photonic structure. Applying this method to calculate the third-harmonic generation in a semiconductor quantum well embedded in a Bragg mirror structure, we find that the power-law exponent of the intensity dependence of the third-harmonic generation depends on the frequency of the exciting pulse. Off-resonant pulses follow the expected cubic dependence, while the exponent is smaller for resonant pulses due to saturation effects in the induced carrier density. Our study provides a detailed understanding of the carrier and light field dynamics during nonlinear processes.
Electron transport and dephasing in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Huibers, Andrew Gerrit A.
At low temperatures, electrons in semiconductors can be phase coherent over distances exceeding tens of microns and are sufficiently monochromatic that a variety of interesting quantum interference phenomena can be observed and manipulated. This work discusses electron transport measurements through cavities (quantum dots) formed by laterally confining electrons in the two-dimensional sub-band of a GaAs/AlGaAs heterojunction. Metal gates fabricated using e-beam lithography enable fine control of the cavity shape as well as the leads which connect the dot cavity to source and drain reservoirs. Quantum dots can be modeled by treating the devices as chaotic scatterers. Predictions of this theoretical description are found to be in good quantitative agreement with experimental measurements of full conductance distributions at different temperatures. Weak localization, the suppression of conductance due to phase-coherent backscattering at zero magnetic field, is used to measure dephasing times in the system. Mechanisms responsible for dephasing, including electron-electron scattering and Nyquist phase relaxation, are investigated by studying the loss of phase coherence as a function of temperature. Coupling of external microwave fields to the device is also studied to shed light on the unexpected saturation of dephasing that is observed below an electron temperature of 100 mK. The effect of external fields in the present experiment is explained in terms of Joule heating from an ac bias.
Impurity effects on coupled quantum dot spin qubits in semiconductors
NASA Astrophysics Data System (ADS)
Nguyen, Nga; Das Sarma, Sankar
2011-03-01
Localized electron spins confined in semiconductor quantum dots are being studied by many groups as possible elementary qubits for solid-state quantum computation. We theoretically consider the effects of having unintentional charged impurities in laterally coupled two-dimensional double (GaAs) quantum dot systems, where each dot contains one or two electrons and a single charged impurity in the presence of an external magnetic field. We calculate the effect of the impurity on the 2-electron energy spectrum of each individual dot as well as on the spectrum of the coupled-double-dot 2-electron system. We find that the singlet-triplet exchange splitting between the two lowest energy states, both for the individual dots and the coupled dot system, depends sensitively on the location of the impurity and its coupling strength (i.e. the effective charge). We comment on the impurity effect in spin qubit operations in the double dot system based on our numerical results. This work is supported by LPS-CMTC and CNAM.
Multi-band Bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells
Girndt, A.; Jahnke, F.; Knorr, A.; Koch, S.W.; Chow, W.W.
1997-04-21
Quasi-equilibrium excitation dependent optical probe spectra of II-VI semiconductor quantum wells at room temperature are investigated within the framework of multi-band semiconductor Bloch equations. The calculations include correlation effects beyond the Hartree-Fock level which describe dephasing, interband Coulomb correlations and band-gap renormalization in second Born approximation. In addition to the carrier-Coulomb interaction, the influence of carrier-phonon scattering and inhomogeneous broadening is considered. The explicit calculation of single particle properties like band structure and dipole matrix elements using k {center_dot} p theory makes it possible to investigate various II-VI material combinations. Numerical results are presented for CdZnSe/ZnSe and CdZnSe/MnZnSSe semiconductor quantum-well systems.
Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells
NASA Technical Reports Server (NTRS)
Liu, Ansheng; Woo, Alex C. (Technical Monitor)
1999-01-01
In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum
Semiconductor quantum dots for in vitro diagnostics and cellular imaging.
Jin, Zongwen; Hildebrandt, Niko
2012-07-01
The need for companion diagnostics, point-of-care testing (POCT) and high-throughput screening in clinical diagnostics and personalized medicine has pushed the need for more biological information from a single sample at extremely low concentrations and volumes. Optical biosensors based on semiconductor quantum dots (QDs) can answer these requirements because their unique photophysical properties are ideally suited for highly sensitive multiplexed detection. Many different biological systems have been successfully scrutinized with a large variety of QDs over the past decade but their future as widely applied commercial biosensors is still open. In this review, we highlight recent in vitro diagnostic and cellular imaging applications of QDs and discuss milestones and obstacles on their way toward integration into real-life diagnostic and medical applications. PMID:22608980
Peptide-mediated cellular delivery of semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Gemmill, Kelly Boeneman; Muttenthaler, Markus; Delehanty, James; Deschamps, Jeff; Susumu, Kimihiro; Stewart, Michael; Dawson, Philip; Huston, Alan; Medintz, Igor
2013-05-01
CdSe/ZnS semiconductor quantum dots (QDs) are ideal materials for biological sensing and cellular imaging applications due to their superior photophysical properties in comparison to fluorescent proteins or dyes and their ease of conjugation to biological materials. We have previously developed a number of in vitro FRET based biosensors in the laboratory for detection of proteases and biological and chemical agents. We would like to expand these biosensing capabilities into cellular systems, requiring development of QD cellular delivery techniques. Peptide mediated cellular delivery of QDs is ideal as peptides are small, easily conjugated to QDs, easily manipulated and synthesized, and can be designed with "handles" for further chemical conjugation with other cargo. Here we discuss four cell delivery peptides that facilitate QD uptake in live cells. Understanding these peptides will help us design better nanoparticle cellular delivery systems and advance our capabilities for in vivo biosensing.
Semiconductor Quantum Dots for Bioimaging and Biodiagnostic Applications
Kairdolf, Brad A.; Smith, Andrew M.; Stokes, Todd H.; Wang, May D.; Young, Andrew N.; Nie, Shuming
2013-01-01
Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future. PMID:23527547
Semiconductor Quantum Dots for Bioimaging and Biodiagnostic Applications
NASA Astrophysics Data System (ADS)
Kairdolf, Brad A.; Smith, Andrew M.; Stokes, Todd H.; Wang, May D.; Young, Andrew N.; Nie, Shuming
2013-06-01
Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future.
Nonequilibrium thermal effects on exciton time correlations in coupled semiconductor quantum dots
Castillo, J. C.; Rodríguez, F. J.; Quiroga, L.
2013-12-04
Theoretical guides to test 'macroscopic realism' in solid-state systems under quantum control are highly desirable. Here, we report on the evolution of a Leggett-Garg inequality (LGI), a combination of two-time correlations, in an out-of-equilibrium set up consisting of two interacting excitons confined in separate semiconductor quantum dots which are coupled to independent baths at different temperatures (T{sub 1} ≠ T{sub 2}). In a Markovian steady-state situation we found a rich variety of dynamical behaviors in different sectors of the average temperature (T{sub M} = (T{sub 1}+T{sub 2})/2) vs. coupling strength to the reservoirs (Γ) space parameter. For high T{sub M} and Γ values the LGI is not violated, as expected. However, by decreasing T{sub M} or Γ a sector of parameters appears where the LGI is violated at thermal equilibrium (T{sub 1} = T{sub 2}) and the violation starts decreasing when the system is moved out of the equilibrium. Surprisingly, at even lower T{sub M} values, for any Γ, there is an enhancement of the LGI violation by exposing the system to a temperature gradient, i.e. quantum correlations increase in a nonequilibrium thermal situation. Results on LGI violations in a steady-state regime are compared with other non-locality-dominated quantum correlation measurements, such as concurrence and quantum discord, between the two excitons under similar temperature gradients.
Quenching of semiconductor quantum dot photoluminescence by a pi-conjugated polymer.
Selmarten, Donald; Jones, Marcus; Rumbles, Garry; Yu, Pingrong; Nedeljkovic, Jovan; Shaheen, Sean
2005-08-25
In this communication we discuss the possibility of hole transfer between a photoexcited semiconductor quantum dot and a pi-conjugated polymer. This charge-transfer event will be investigated (exploited) on the basis of its implication toward a solar energy conversion scheme. Experimentally, we show that the steady-state photoluminescence (PL) of a solution of InP quantum dots is quenched by the introduction of solvated poly(3-hexylthiophene). Time-resolved PL experiments on these solutions are also presented. It was observed that the PL transients did not significantly change upon the addition of the conductive polymer. These new results indicate that said PL quenching is static in nature. This suggests that in solution, the quantum dot and the polymer exhibit a strong intermolecular interaction. As the two species encounter each other through diffusion, the polymer quenches the quantum dot photoluminescence without altering the population's PL lifetime. This new evidence suggests that the polymer and the quantum dot form a relatively stable complex.
Theory of photovoltaic characteristics of semiconductor quantum dot solar cells
NASA Astrophysics Data System (ADS)
Wu, Yuchang; Asryan, Levon V.
2016-08-01
We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the current-voltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.
An impedance analysis of double-stream interaction in semiconductors
NASA Technical Reports Server (NTRS)
Chen, P. W.; Durney, C. H.
1972-01-01
The electromagnetic waves propagating through a drifting semiconductor plasma are studied from a macroscopic point of view in terms of double-stream interaction. The possible existing waves (helicon waves, longitudinal waves, ordinary waves, and pseudolongitudinal waves) which depend upon the orientation of the dc external magnetic field are derived. A powerful impedance concept is introduced to investigate the wave behavior of longitudinal (space charge) waves or pseudolongitudinal waves in a semiconductor plasma. The impedances due to one- and two-carrier stream interactions were calculated theoretically.
Coherent quantum depletion of an interacting atom condensate
Kira, M.
2015-01-01
Sufficiently strong interactions promote coherent quantum transitions in spite of thermalization and losses, which are the adversaries of delicate effects such as reversibility and correlations. In atomic Bose–Einstein condensates (BECs), strong atom–atom interactions can eject atoms from the BEC to the normal component, yielding quantum depletion instead of temperature depletion. A recent experiment has already been verified to overcome losses. Here I show that it also achieves coherent quantum-depletion dynamics in a BEC swept fast enough from weak to strong atom–atom interactions. The elementary coherent process first excites the normal component into a liquid state that evolves into a spherical shell state, where the atom occupation peaks at a finite momentum to shield 50% of the BEC atoms from annihilation. The identified coherent processes resemble ultrafast semiconductor excitations expanding the scope of BEC explorations to many-body non-equilibrium studies. PMID:25767044
Coherent quantum depletion of an interacting atom condensate.
Kira, M
2015-03-13
Sufficiently strong interactions promote coherent quantum transitions in spite of thermalization and losses, which are the adversaries of delicate effects such as reversibility and correlations. In atomic Bose-Einstein condensates (BECs), strong atom-atom interactions can eject atoms from the BEC to the normal component, yielding quantum depletion instead of temperature depletion. A recent experiment has already been verified to overcome losses. Here I show that it also achieves coherent quantum-depletion dynamics in a BEC swept fast enough from weak to strong atom-atom interactions. The elementary coherent process first excites the normal component into a liquid state that evolves into a spherical shell state, where the atom occupation peaks at a finite momentum to shield 50% of the BEC atoms from annihilation. The identified coherent processes resemble ultrafast semiconductor excitations expanding the scope of BEC explorations to many-body non-equilibrium studies.
Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots
Herzog, Bastian Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike; Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W.
2015-11-16
Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.
Chemla, D.S.
1993-06-30
This article reviews recent investigations of nonlinear optical processes in semiconductors. Section II discusses theory of coherent wave mixing in semiconductors, with emphasis on resonant excitation with only one exciton state. Section III reviews recent experimental investigations of amplitude and phase of coherent wave-mixing resonant with quasi-2d excitons in GaAs quantum wells.
Bouchard, A.M.
1994-07-27
This report discusses the following topics: Bloch oscillations and other dynamical phenomena of electrons in semiconductor superlattices; solvable dynamical model of an electron in a one-dimensional aperiodic lattice subject to a uniform electric field; and quantum dynamical phenomena of electrons in aperiodic semiconductor superlattices.
Mokkapati, Sudha; Saxena, Dhruv; Tan, Hark Hoe; Jagadish, Chennupati
2013-12-01
The optimal geometries for reducing the radiative recombination lifetime and thus enhancing the quantum efficiency of III-V semiconductor nanowires by coupling them to plasmonic nanoparticles are established. The quantum efficiency enhancement factor due to coupling to plasmonic nanoparticles reduces as the initial quality of the nanowire increases. Significant quantum efficiency enhancement is observed for semiconductors only within about 15 nm from the nanoparticle. It is also identified that the modes responsible for resonant enhancement in the quantum efficiency of an emitter in the nanowire are geometric resonances of surface plasmon polariton modes supported at the nanowire/nanoparticle interface.
Semiconductor quantum dot intermixing for monolithic photonic integration
NASA Astrophysics Data System (ADS)
Wang, Yang
Monolithic photonic integration and semiconductor quantum dot (QD) are two key technologies for the development of future fiber optic networks. This PhD work explores the possibilities for joining of these two ideas to create next generation photonic integrated circuits through the modeling, process development and characterization, and device demonstration of QD intermixing technique. The one-dimensional quantum well (QW) and three-dimensional QD intermixing model are developed. The calculations of multiple cations intermixing in InGaAsSb/AlGaAsSb QW structure suggest that a large tuning range of 2.4 mum to 1.7 mum can be obtained using intermixing technique. The theoretical analysis of quantum-confined Stark effect in the as-grown and interdiffused QD structures shows that the nonzero built-in dipole moment exists in the as-grown non-symmetrical QDs and we found that the uniform Fick's type intermixing will reduce the built-in dipole significantly. The enhanced Stark shifts have also been predicted for QD structures after intermixing. Impurity-free vacancy induced disordering (IFVD) and N ion-implantation induced disordering (N-IID) have been performed to promote the efficient group-III intermixing in InP-based quantum dash (QDash) laser structure. Selective intermixing can be achieved using SixNy as intermixing source and SiO2 as intermixing mask with a differential wavelength shift of 76 nm. A model has been proposed to explain the selective intermixing behavior and we postulate that the enhanced intermixing under SixNy capping layer is related to the dominant In diffusion with respect to other group-III atoms. More efficient intermixing which requires a lower activation than the IFVD was observed in N-IID) process. Differential bandgap shift of 112 nm has been observed after N implantation at 5 x 1012 ions/cm2 and subsequent annealing at 700°C. High quality bandgap tuned QDash lasers have been fabricated with over 120 nm wavelength blueshift showing the well
Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices
Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.
2015-06-21
A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.
Antiferromagnetic order in a semiconductor quantum well with spin-orbit coupling
NASA Astrophysics Data System (ADS)
Marinescu, D. C.
2015-05-01
An argument is made on the existence of a low-temperature itinerant antiferromagnetic (AF) spin alignment, rather than persistent helical (PH), in the ground state of a two dimensional electron gas in a semiconductor quantum well with linear spin-orbit Rashba-Dresselhaus interaction at equal coupling strengths, α. This result is obtained on account of the opposite-spin single-particle state degeneracy at k = 0 that makes the spin instability possible. A theory of the resulting magnetic phase is formulated within the Hartree-Fock approximation of the Coulomb interaction. In the AF state the direction of the fractional polarization is obtained to be aligned along the displacement vector of the single-particle states.
Continuing progress toward controlled intracellular delivery of semiconductor quantum dots
Breger, Joyce; Delehanty, James B; Medintz, Igor L
2015-01-01
The biological applications of luminescent semiconductor quantum dots (QDs) continue to grow at a nearly unabated pace. This growth is driven, in part, by their unique photophysical and physicochemical properties which have allowed them to be used in many different roles in cellular biology including: as superior fluorophores for a wide variety of cellular labeling applications; as active platforms for assembly of nanoscale sensors; and, more recently, as a powerful tool to understand the mechanisms of nanoparticle mediated drug delivery. Given that controlled cellular delivery is at the intersection of all these applications, the latest progress in delivering QDs to cells is examined here. A brief discussion of relevant considerations including the importance of materials preparation and bioconjugation along with the continuing issue of endosomal sequestration is initially provided for context. Methods for the cellular delivery of QDs are then highlighted including those based on passive exposure, facilitated strategies that utilize peptides or polymers and fully active modalities such as electroporation and other mechanically based methods. Following on this, the exciting advent of QD cellular delivery using multiple or combined mechanisms is then previewed. Several recent methods reporting endosomal escape of QD materials in cells are also examined in detail with a focus on the mechanisms by which access to the cytosol is achieved. The ongoing debate over QD cytotoxicity is also discussed along with a perspective on how this field will continue to evolve in the future. PMID:25154379
Continuing progress toward controlled intracellular delivery of semiconductor quantum dots.
Breger, Joyce; Delehanty, James B; Medintz, Igor L
2015-01-01
The biological applications of luminescent semiconductor quantum dots (QDs) continue to grow at a nearly unabated pace. This growth is driven, in part, by their unique photophysical and physicochemical properties which have allowed them to be used in many different roles in cellular biology including: as superior fluorophores for a wide variety of cellular labeling applications; as active platforms for assembly of nanoscale sensors; and, more recently, as a powerful tool to understand the mechanisms of nanoparticle mediated drug delivery. Given that controlled cellular delivery is at the intersection of all these applications, the latest progress in delivering QDs to cells is examined here. A brief discussion of relevant considerations including the importance of materials preparation and bioconjugation along with the continuing issue of endosomal sequestration is initially provided for context. Methods for the cellular delivery of QDs are then highlighted including those based on passive exposure, facilitated strategies that utilize peptides or polymers and fully active modalities such as electroporation and other mechanically based methods. Following on this, the exciting advent of QD cellular delivery using multiple or combined mechanisms is then previewed. Several recent methods reporting endosomal escape of QD materials in cells are also examined in detail with a focus on the mechanisms by which access to the cytosol is achieved. The ongoing debate over QD cytotoxicity is also discussed along with a perspective on how this field will continue to evolve in the future.
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime
NASA Astrophysics Data System (ADS)
Baart, T. A.; Eendebak, P. T.; Reichl, C.; Wegscheider, W.; Vandersypen, L. M. K.
2016-05-01
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.
Hybrid em wave - polar semiconductor interaction: A polaronic study
Paliwal, Ayushi Dubey, Swati; Ghosh, S.
2015-07-31
Present paper considers incidence of a most realistic hybrid pump wave on a weakly polar semiconductor having a very small coupling constant. Possibility of optical parametric interaction has been explored in the presence of an external transverse magnetic field. The effect of doping concentrations and transverse magnetostatic field on threshold characteristics of optical parametric interaction in polar semiconductor plasma has been studied, using hydrodynamic model of semiconductors, in the far infrared regime. Numerical estimations have been carried out by using data of weakly polar III-V GaAs semiconductor and influence of control parameters on electron-LO phonon interaction has been analyzed. A particular range of physical parameters is found to be suitable for minimum threshold. The choice of nonlinear medium and favorable range of operating parameters are crucial aspects in design and fabrication of parametric amplifiers and oscillators. The hybrid mode of the pump is found to be favorable for the onset of the said process and realization of a low cost amplifier.
NASA Astrophysics Data System (ADS)
Hussain, S.; Akhtar, N.
2016-09-01
Ion acoustic shocks in the electron-hole-ion semiconductor plasmas have been studied. The quantum recoil effects, exchange-correlation effects and degenerate pressure of electrons and holes are included. The ion species are considered classical and their dissipation is taken into account via the dynamic viscosity. The Korteweg de Vries Burgers equation is derived by using reductive perturbation approach. The excitation of shock waves in different semiconductor plasmas is pointed out. For numerical analyses, the plasma parameters of different semiconductors are considered. The impact of variation of the plasma parameters on the strength of the shock wave in the semiconductor plasmas is discussed.
Interaction of Water-Soluble CdTe Quantum Dots with Bovine Serum Albumin
2011-01-01
Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating. PMID:27502633
NASA Astrophysics Data System (ADS)
Prezhdo, Oleg V.
2008-07-01
The article presents the current perspective on the nature of photoexcited states in semiconductor quantum dots (QDs). The focus is on multiple excitons and photo-induced electron-phonon dynamics in PbSe and CdSe QDs, and the advocated view is rooted in the results of ab initio studies in both energy and time domains. As a new type of material, semiconductor QDs represent the borderline between chemistry and physics, exhibiting both molecular and bulk-like properties. Similar to atoms and molecules, the electronic spectra of QD show discrete bands. Just as bulk semiconductors, QDs comprise multiple copies of the elementary unit cell, and are characterized by valence and conduction bands. The electron-phonon coupling in QDs is weaker than in molecules, but stronger than in bulk semiconductors. Unlike either material, the QD properties can be tuned continuously by changing QD size and shape. The molecular and bulk points of view often lead to contradicting conclusions. For example, the molecular view suggests that the excitations in QDs should exhibit strong electron-correlation (excitonic) effects, and that the electron-phonon relaxation should be slow due to the discrete nature of the optical bands and the mismatch of the electronic energy gaps with vibrational frequencies. In contrast, a finite-size limit of bulk properties indicates that the kinetic energy of quantum confinement should be significantly greater than excitonic effects and that the electron-phonon relaxation inside the quasi-continuous bands should be efficient. Such qualitative differences have generated heated discussions in the literature. The great potential of QDs for a variety of applications, including photovoltaics, spintronics, lasers, light-emitting diodes, and field-effect transistors makes it crutual to settle the debates. By synthesizing different viewpoints and presenting a unified atomistic picture of the excited state processes, our ab initio analysis clarifies the controversies
Nonradiative resonance energy transfer between semiconductor quantum dots
Samosvat, D. M. Chikalova-Luzina, O. P.; Zegrya, G. G.
2015-07-15
A microscopic analysis of the mechanisms of nonradiative energy transfer in a system of two semiconductor QDs caused by Coulomb interaction of donor and acceptor electrons is performed. The energy transfer rate is calculated for QDs based on III–V compounds using the Kane model. Conditions are analyzed under which energy transfer from a donor to an acceptor is possible. The mixing in of the p states of the valence band to the s states of the conduction band is found to give rise to additional contributions to the matrix element of energy transfer. It is shown that these additional contributions play a considerable role in the energy transfer process at distances between QDs close to contact distances or much greater. The influence of the exchange interaction on the energy transfer mechanism is analyzed, and it is shown that this interaction should be taken into account for a quantitative description of the energy transfer when QDs are separated by a distance close to the contact distance.
Nonradiative resonance energy transfer between semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Samosvat, D. M.; Chikalova-Luzina, O. P.; Zegrya, G. G.
2015-07-01
A microscopic analysis of the mechanisms of nonradiative energy transfer in a system of two semiconductor QDs caused by Coulomb interaction of donor and acceptor electrons is performed. The energy transfer rate is calculated for QDs based on III-V compounds using the Kane model. Conditions are analyzed under which energy transfer from a donor to an acceptor is possible. The mixing in of the p states of the valence band to the s states of the conduction band is found to give rise to additional contributions to the matrix element of energy transfer. It is shown that these additional contributions play a considerable role in the energy transfer process at distances between QDs close to contact distances or much greater. The influence of the exchange interaction on the energy transfer mechanism is analyzed, and it is shown that this interaction should be taken into account for a quantitative description of the energy transfer when QDs are separated by a distance close to the contact distance.
Excitons in Semiconductor Quantum Wells Studied Using Two-Dimensional Coherent Spectroscopy
NASA Astrophysics Data System (ADS)
Singh, Rohan
Correlated electron-hole pairs, or excitons, in semiconductor nanostructures have been studied extensively over the past few decades. The optical response of excitons is complicated due to inhomogeneous broadening, presence of multiple states, and exciton-exciton interactions. In this work we bring new perspectives to exciton physics in semiconductor quantum wells (QWs) through two-dimensional coherent spectroscopy (2DCS). The effect of QW growth direction on the optical properties of excitons is explored by studying (110)-oriented GaAs QWs. The homogeneous and inhomogeneous linewidths of the heavy-hole exciton resonance are measured. By probing the optical nonlinear response for polarization along the in-plane crystal axes [110] and [001], we measure different homogeneous linewidths for the two orthogonal directions. This difference is found to be due to anisotropic excitation-induced dephasing, caused by a crystal-axis-dependent absorption coefficient. The extrapolated zero-excitation density homogeneous linewidth exhibits an activation-like temperature dependence. Spectral diffusion of excitons in (001)-oriented QWs has been studied. We show that the spectral diffusion characteristics depend strongly on the sample temperature. Spectral diffusion is generally assumed to follow the strong-redistribution approximation, partly because of lack of any evidence to the contrary. We find that this assumption is violated at low sample temperatures for excitons in QWs; high-energy excitons preferentially relax due to a negligible phonon population at low temperatures. The frequency-frequency correlation function is measured through a numerical fitting procedure to quantify spectral diffusion for sample temperatures >20 K. Exciton-exciton interactions affect the light-matter interactions in QWs significantly. We present an intuitive and simple model for these interactions by treating excitons as interacting bosons. We show that the polarization-dependent exciton dephasing
Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors
NASA Astrophysics Data System (ADS)
Hung, Nguyen T.; Hasdeo, Eddwi H.; Nugraha, Ahmad R. T.; Dresselhaus, Mildred S.; Saito, Riichiro
2016-07-01
We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ , bulk semiconductors may give a higher power factor compared to the lower dimensional ones.
Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.
Hung, Nguyen T; Hasdeo, Eddwi H; Nugraha, Ahmad R T; Dresselhaus, Mildred S; Saito, Riichiro
2016-07-15
We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones. PMID:27472126
Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.
Hung, Nguyen T; Hasdeo, Eddwi H; Nugraha, Ahmad R T; Dresselhaus, Mildred S; Saito, Riichiro
2016-07-15
We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones.
Wang, Yunliang Lü, Xiaoxia
2014-02-15
The modulational instability of quantum electrostatic acoustic waves in electron-hole quantum semiconductor plasmas is investigated using the quantum hydrodynamic model, from which a modified nonlinear Schrödinger equation with damping effects is derived using the reductive perturbation method. Here, we consider the combined effects of quantum recoil, quantum degenerate pressures, as well as the exchange-correlation effect standing for the electrons (holes) spin. The modulational instability for different semiconductors (GaAs, GaSb, and InP) is discussed. The collision between electron (hole) and phonon is also investigated. The permitted maximum time for modulational instability and the damping features of quantum envelope solitary wave are all determined by the collision. The approximate solitary solution with damping effects is presented in weak collision limit. The damping properties were discussed by numerical method.
Quantum model of electron accumulation at charged boundaries of heavily doped semiconductor films
Gergel, V. A. Verhovtseva, A. V.
2010-10-15
A new quantum model of electron accumulation at positively charged boundaries of semiconductor films has been developed. It is based on the well-known concepts of quantum confinement of transverse electron motion in a uniform electric field, the role of which is played by the effective field of attraction to positive surface donor centers. Electrons with a surface density equal to the donor concentration occupy the corresponding quasi-discrete states according to the Fermi statistics. At reasonable concentrations all the electrons of the accumulation layer are mainly concentrated at the first quantum-confinement level. Ultra-high built-in fields on the order of the atomic level (10{sup 8} V/cm) correspond to the onset of filling the third level. The potential profile, which describes the interaction of the accumulation-layer electrons with other charged particles (including holes) is calculated by double integration of the Poisson equation with the electron density in the form of squares of the corresponding segments of the Airy function. Its boundary value-the surface potential-describes the effect of the electron-accumulation layer on the external electric circuit. The obtained dependence of the surface potential on the resulting boundary electric field (including that induced by the built-in charge) is easily transformed into the corresponding capacitance-voltage characteristics.
Nonlinear optics response of semiconductor quantum wells under high magnetic fields
Chemla, D.S.
1993-07-01
Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW`s as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H {yields} {infinity}. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed.
Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells
NASA Technical Reports Server (NTRS)
Kolokolov, K.; Li, J.; Ning, C. Z.; Larrabee, D. C.; Tang, J.; Khodaparast, G.; Kono, J.; Sasa, S.; Inoue, M.; Biegel, Bryan A. (Technical Monitor)
2002-01-01
The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.
NASA Astrophysics Data System (ADS)
Zunger, Alex
2003-03-01
Semiconductor Quantum Dots that are of sufficient structural quality (good crystallinity, surface passivation, size uniformity) to produce ultra sharp spectroscopic lines worthy of a detailed theoretical effort tend to be rather BIG, containing thousands to million atoms. Yet, in this size regime, the only theoretical methods available are effective-mass based, particle-in-a-box approaches, that neglect multi-band and inter-valley coupling, leading to significant qualitative errors.(A. Zunger,Phys. Stat. Sol. (a) 190), 467 (2002). While LDA-based methods are capable of solving the Single-Particle problem even for ˜1,000 atom dots, the all important many-body problem can be currently addressed only for considerably smaller dots. I will present here a computational alternative which addresses both the single-particle and the Manybody parts of the problem for 10^3 to 10^6 atom dots .The method is applicable both to ``free Standing" (e.g. colloidal) dots of CdSe, InP, InAs and Si, as well as to the strained, ``self-assembled" epitaxial dots of, e.g., InGaAs/GaAs. It is based on a ``Linear Combination of Bulk Bands" (LCBB) approach that expands the dot states in terms of plane wave based (pseudopotential) Bloch states throughout the Brillouin zone. The manybody part is treated via Configuration Interaction. I will illustrate how this method addresses some of the recent striking experimental observations on semiconductor quantum dots:(i) Scaling laws for band gaps and exchange interactions (ii) Rapid Auger transitions in colloidal dots (iii) Coulomb Blocade and Spin Blockade in colloidal dots (iv) Charged Excitons (e.g. Trions) in Self-assembled dots, and (v) excitonic Fine-Structure in self assembled dots.
Tunable Quantum Dot Solids: Impact of Interparticle Interactions on Bulk Properties
Sinclair, Michael B.; Fan, Hongyou; Brener, Igal; Liu, Sheng; Luk, Ting S.; Li, Binsong
2015-09-01
QD-solids comprising self-assembled semiconductor nanocrystals such as CdSe are currently under investigation for use in a wide array of applications including light emitting diodes, solar cells, field effect transistors, photodetectors, and biosensors. The goal of this LDRD project was develop a fundamental understanding of the relationship between nanoparticle interactions and the different regimes of charge and energy transport in semiconductor quantum dot (QD) solids. Interparticle spacing was tuned through the application of hydrostatic pressure in a diamond anvil cell, and the impact on interparticle interactions was probed using x-ray scattering and a variety of static and transient optical spectroscopies. During the course of this LDRD, we discovered a new, previously unknown, route to synthesize semiconductor quantum wires using high pressure sintering of self-assembled quantum dot crystals. We believe that this new, pressure driven synthesis approach holds great potential as a new tool for nanomaterials synthesis and engineering.
Geometrically induced electron-electron interaction in semiconductor nanowires
NASA Astrophysics Data System (ADS)
Pinto, N.; Rezvani, S. J.; Favre, L.; Berbezier, I.; Fretto, M.; Boarino, L.
2016-09-01
We report the observation of a structurally induced doping compensation mechanism in doped semiconductor nanowires that results from the reduced size geometry. This kind of compensation can significantly affect the electronic transport properties of the doped nanowires. We demonstrate that in a crystalline n-type doped Ge wire, compensated by the acceptor-like localized surface states, strong electron-electron interactions occur. Variable range hopping conduction detected in these nanowires is directly generated from strong interactions, exhibiting an unusual large Coulomb gap in the density of states of wires.
Oktyabrsky, Serge; Yakimov, Michael; Tokranov, Vadim; Murat, Pavel
2016-03-30
Here, a picosecond-range timing of charged particles and photons is a long-standing challenge for many high-energy physics, biophysics, medical and security applications. We present a design, technological pathway and challenges, and some properties important for realization of an ultrafast high-efficient room-temperature semiconductor scintillator based on self-assembled InAs quantum dots (QD) embedded in a GaAs matrix. Low QD density (<; 1015 cm-3), fast (~5 ps) electron capture, luminescence peak redshifted by 0.2-0.3 eV from GaAs absorption edge with fast decay time (0.5-1 ns) along with the efficient energy transfer in the GaAs matrix (4.2 eV/pair) allows for fabrication of a semiconductormore » scintillator with the unsurpassed performance parameters. The major technological challenge is fabrication of a large volume (> 1 cm3 ) of epitaxial QD medium. This requires multiple film separation and bonding, likely using separate epitaxial films as waveguides for improved light coupling. Compared to traditional inorganic scintillators, the semiconductor-QD based scintillators could have about 5x higher light yield and 20x faster decay time, opening a way to gamma detectors with the energy resolution better than 1% and sustaining counting rates MHz. Picosecond-scale timing requires segmented low-capacitance photodiodes integrated with the scintillator. For photons, the proposed detector inherently provides the depth-of-interaction information.« less
Repeated interactions in open quantum systems
Bruneau, Laurent; Joye, Alain; Merkli, Marco
2014-07-15
Analyzing the dynamics of open quantum systems has a long history in mathematics and physics. Depending on the system at hand, basic physical phenomena that one would like to explain are, for example, convergence to equilibrium, the dynamics of quantum coherences (decoherence) and quantum correlations (entanglement), or the emergence of heat and particle fluxes in non-equilibrium situations. From the mathematical physics perspective, one of the main challenges is to derive the irreversible dynamics of the open system, starting from a unitary dynamics of the system and its environment. The repeated interactions systems considered in these notes are models of non-equilibrium quantum statistical mechanics. They are relevant in quantum optics, and more generally, serve as a relatively well treatable approximation of a more difficult quantum dynamics. In particular, the repeated interaction models allow to determine the large time (stationary) asymptotics of quantum systems out of equilibrium.
NASA Astrophysics Data System (ADS)
Takayama, R.; Kwong, N. H.; Rumyantsev, I.; Kuwata-Gonokami, M.; Binder, R.
2002-02-01
A detailed numerical analysis of exciton-exciton interactions in semiconductor quantum wells is presented. The theory is based on the dynamics-controlled truncation formalism and evaluated for the case of resonant excitation of 1s-heavy-hole excitons. It is formulated in terms of standard concepts of scattering theory, such as the forward-scattering amplitude (or T-matrix). The numerical diagonalization of the exciton-exciton interaction matrix in the 1s-approximation yields the excitonic T-matrix. We discuss the role of the direct and exchange interaction in the effective two-exciton Hamiltonian, which determines the T-matrix, evaluated within the 1s-subspace, and also analyze the effects of the excitonic wave function overlap matrix. Inclusion of the latter is shown to effectively prevent the 1s-approximation from making the Hamiltonian non-hermitian, but a critical discussion shows that other artefacts may be avoided by not including the overlap matrix. We also present a detailed analysis of the correspondence between the excitonic T-matrix in the 1s-approximation and the well-known T-matrix governing two-particle interactions in two dimensional systems via short-range potentials.
Terahertz quantum transport in semiconductor nanostructures with the UCSB free electron lasers
Allen, S.J.
1995-12-31
Quantum transport in semiconductor nanostructures takes on new dimensions in the presence of intense terahertz electric fields. Terahertz frequencies lift us into the regime where the scattering and relaxation is not so important and strong terahertz electric fields provided by the UCSB FEL`s explore non-linear dynamics far from the perturbative limit. New quantum transport channels that are assisted by the absorption or emission of a photon appear in current voltage characteristics. We will describe some of these experiments, the new phenomena they expose and the potential impact on future terahertz semiconductor electronics.
Quantum filter of spin polarized states: Metal–dielectric–ferromagnetic/semiconductor device
Makarov, Vladimir I.; Khmelinskii, Igor
2014-02-01
Highlights: • Development of a new spintronics device. • Development of quantum spin polarized filters. • Development of theory of quantum spin polarized filter. - Abstract: Recently we proposed a model for the Quantum Spin-Polarized State Filter (QSPSF). The magnetic moments are transported selectively in this model, detached from the electric charge carriers. Thus, transfer of a spin-polarized state between two conductors was predicted in a system of two levels coupled by exchange interaction. The strength of the exchange interaction between the two conductive layers depends on the thickness of the dielectric layer separating them. External magnetic fields modulate spin-polarized state transfer, due to Zeeman level shift. Therefore, a linearly growing magnetic field generates a series of current peaks in a nearby coil. Thus, our spin-state filter should contain as least three nanolayers: (1) conductive or ferromagnetic; (2) dielectric; and (3) conductive or semiconductive. The spectrum of spin-polarized states generated by the filter device consists of a series of resonance peaks. In a simple case the number of lines equals S, the total spin angular momentum of discrete states in one of the coupled nanolayers. Presently we report spin-polarized state transport in metal–dielectric–ferromagnetic (MDF) and metal–dielectric–semiconductor (MDS) three-layer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-layer devices. The theoretical model is used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment averaged over the surface of the device was carried out. The model predicts the resonance structure of the signal, although at its present accuracy it cannot predict the positions of the spectral peaks.
Basset, J.; Stockklauser, A.; Jarausch, D.-D.; Frey, T.; Reichl, C.; Wegscheider, W.; Wallraff, A.; Ensslin, K.; Ihn, T.
2014-08-11
We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase (I) and the quadrature (Q) components of the microwave tone transmitted through the resonator are sensitive to charging events in the surrounding environment of the double dot with an optimum sensitivity of 8.5×10{sup −5} e/√(Hz). A low frequency 1/f type noise spectrum combined with a white noise level of 6.6×10{sup −6} e{sup 2}/Hz above 1 Hz is extracted, consistent with previous results obtained with quantum point contact charge detectors on similar heterostructures. The slope of the 1/f noise allows to extract a lower bound for the double-dot charge qubit dephasing rate which we compare to the one extracted from a Jaynes-Cummings Hamiltonian approach. The two rates are found to be similar emphasizing that charge noise is the main source of dephasing in our system.
Implications of mercury interactions with band-gap semiconductor oxides
Granite, E.J.; King, W.P.; Stanko, D.C.; Pennline, H.W.
2008-09-01
Titanium dioxide is a well-known photooxidation catalyst. It will oxidize mercury in the presence of ultraviolet light from the sun and oxygen and/or moisture to form mercuric oxide. Several companies manufacture self-cleaning windows. These windows have a transparent coating of titanium dioxide. The titanium dioxide is capable of destroying organic contaminants in air in the presence of ultraviolet light from the sun, thereby keeping the windows clean. The commercially available self-cleaning windows were used to sequester mercury from oxygen–nitrogen mixtures. Samples of the self-cleaning glass were placed into specially designed photo-reactors in order to study the removal of elemental mercury from oxygen–nitrogen mixtures resembling air. The possibility of removing mercury from ambient air with a self-cleaning glass apparatus is examined. The intensity of 365-nm ultraviolet light was similar to the natural intensity from sunlight in the Pittsburgh region. Passive removal of mercury from the air may represent an option in lieu of, or in addition to, point source clean-up at combustion facilities. There are several common band-gap semiconductor oxide photocatalysts. Sunlight (both the ultraviolet and visible light components) and band-gap semiconductor particles may have a small impact on the global cycle of mercury in the environment. The potential environmental consequences of mercury interactions with band-gap semiconductor oxides are discussed. Heterogeneous photooxidation might impact the global transport of elemental mercury emanating from flue gases.
Wake potential with exchange-correlation effects in semiconductor quantum plasmas
Khan, Arroj A.; Jamil, M.; Hussain, A.
2015-09-15
Using the non-relativistic quantum hydrodynamic model, wake potential has been studied in a magnetized semiconductor quantum plasma in the presence of upper hybrid wave which is excited via externally injected electron beam. The quantum effect contains electron exchange and correlation potential, Fermi degenerate pressure, and Bohm potential. It is found that the contribution of quantum mechanical electron exchange and correlation potential significantly modifies the amplitude and the effective length of the oscillatory wake potential. In the electron-hole plasma systems, electron exchange-correlation effects tend to increase the magnitude of the wake potential and are much effective at the distances of the order of Debye-length. The application of the work in context of the semiconductor plasmas have also been analyzed graphically.
Interaction of two modulational instabilities in a semiconductor resonator.
Kozyreff, G; Chapman, S J; Tlidi, M
2003-07-01
The interaction of two neighboring modulational instabilities in a coherently driven semiconductor cavity is investigated. First, an asymptotic reduction of the general equations is performed in the limit of a nearly vertical input-output characteristic. Next, a normal form is derived in the limit where the two instabilities are close to one other. An infinity of branches of periodic solutions are found to emerge from the unstable portion of the homogeneous branch. These branches have a nontrivial envelope in the bifurcation diagram that can either smoothly join the two instability points or form an isolated branch of solutions. PMID:12935188
Semiconductor surface sublimation energies and atom-atom interactions
NASA Technical Reports Server (NTRS)
Krishnamurthy, Srinivasan; Berding, M. A.; Sher, A.; Chen, A.-B.
1990-01-01
The energy required to remove an atom from semiconductor surfaces is calculated using a Green's-function approach. Contrary to intuition, it is found that, in some cases, less energy is needed to remove an atom from the nearly full surface than from a nearly empty surface. The results are explained in terms of the relative energies of anion and cation dangling bonds, and the charge transfers between them. The deducted effective pair-interaction energies and their effects on surface morphology and growth perfection are discussed.
A semiclassical method in the theory of light scattering by semiconductor quantum dots
Lang, I. G.; Korovin, L. I. Pavlov, S. T.
2008-06-15
A semiclassical method is proposed for the theoretical description of elastic light scattering by arbitrary semiconductor quantum dots under conditions of size quantization. This method involves retarded potentials and allows one to dispense with boundary conditions for electric and magnetic fields. Exact results for the Umov-Poynting vector at large distances from quantum dots in the case of monochromatic and pulsed irradiation and formulas for differential scattering cross sections are obtained.
Emergence of the Persistent Spin Helix in Semiconductor Quantum Wells
Koralek, Jake; Weber, Chris; Orenstein, Joe; Bernevig, Andrei; Zhang, Shoucheng; Mack, Shawn; Awschalom, David
2011-08-24
According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit (SO) coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be recovered in a two-dimensional electron gas (2DEG), despite the presence of SO coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix' (PSH). SU(2) is restored, in principle, when the strength of two dominant SO interactions, the Rashba ({alpha}) and linear Dresselhaus ({beta}{sub 1}), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term ({beta}{sub 3}) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as {alpha} {yields} {beta}{sub 1}. Here we observe experimentally the emergence of the PSH in GaAs quantum wells (QW's) by independently tuning {alpha} and {beta}{sub 1}. Using transient spin-grating spectroscopy (TSG), we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant SO terms, identifying {beta}{sub 3} as the main SU(2) violating term in our samples. The tunable suppression of spin-relaxation demonstrated in this work is well-suited for application to spintronics.
Ultrafast spin dynamics in II-VI diluted magnetic semiconductors with spin-orbit interaction
NASA Astrophysics Data System (ADS)
Ungar, F.; Cygorek, M.; Tamborenea, P. I.; Axt, V. M.
2015-05-01
We study theoretically the ultrafast spin dynamics of II-VI diluted magnetic semiconductors in the presence of spin-orbit interaction. Our goal is to explore the interplay or competition between the exchange sd coupling and the spin-orbit interaction in both bulk and quantum-well systems. For bulk materials we concentrate on Zn1 -xMnxSe and take into account the Dresselhaus interaction, while for quantum wells we examine Hg1 -x -yMnxCdyTe systems with a strong Rashba coupling. Our calculations were performed with a recently developed formalism which incorporates electronic correlations beyond mean-field theory originating from the exchange sd coupling. For both bulk and quasi-two-dimensional systems we find that, by varying the system parameters within realistic ranges, either of the two interactions can be chosen to play a dominant role or they can compete on an equal footing with each other. The most notable effect of the spin-orbit interaction in both types of system is the appearance of strong oscillations where the exchange sd coupling by itself causes only an exponential decay of the mean electronic spin components. The mean-field approximation is also studied and an analytical interpretation is given as to why it shows a strong suppression of the spin-orbit-induced dephasing of the spin component parallel to the Mn magnetic field.
Electron-hole correlations in semiconductor quantum dots with tight-binding wave fuctions
NASA Technical Reports Server (NTRS)
Seungwon, L.; Jonsson, L.; Wilkins, J.; Bryant, G.; Klimeck, G.
2001-01-01
The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect-gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials.
Direct Photonic Coupling of a Semiconductor Quantum Dot and a Trapped Ion
NASA Astrophysics Data System (ADS)
Meyer, H. M.; Stockill, R.; Steiner, M.; Le Gall, C.; Matthiesen, C.; Clarke, E.; Ludwig, A.; Reichel, J.; Atatüre, M.; Köhl, M.
2015-03-01
Coupling individual quantum systems lies at the heart of building scalable quantum networks. Here, we report the first direct photonic coupling between a semiconductor quantum dot and a trapped ion and we demonstrate that single photons generated by a quantum dot controllably change the internal state of a Yb+ ion. We ameliorate the effect of the 60-fold mismatch of the radiative linewidths with coherent photon generation and a high-finesse fiber-based optical cavity enhancing the coupling between the single photon and the ion. The transfer of information presented here via the classical correlations between the σz projection of the quantum-dot spin and the internal state of the ion provides a promising step towards quantum-state transfer in a hybrid photonic network.
Categorical quantum mechanics II: Classical-quantum interaction
NASA Astrophysics Data System (ADS)
Coecke, Bob; Kissinger, Aleks
2016-08-01
This is the second part of a three-part overview, in which we derive the category-theoretic backbone of quantum theory from a process ontology, treating quantum theory as a theory of systems, processes and their interactions. In this part, we focus on classical-quantum interaction. Classical and quantum systems are treated as distinct types, of which the respective behavioral properties are specified in terms of processes and their compositions. In particular, classicality is witnessed by ‘spiders’ which fuse together whenever they connect. We define mixedness and show that pure processes are extremal in the space of all processes, and we define entanglement and show that quantum theory indeed exhibits entanglement. We discuss the classification of tripartite qubit entanglement and show that both the GHZ-state and the W-state come from spider-like families of processes, which differ only in how they behave when they are connected by two or more wires. We define measurements and provide fully comprehensive descriptions of several quantum protocols involving classical data flow. Finally, we give a notion of ‘genuine quantumness’, from which special processes called ‘phase spiders’ arise, and get a first glimpse of quantum nonlocality.
Kuehn, W; Reimann, K; Woerner, M; Elsaesser, T; Hey, R
2011-05-12
We discuss a novel approach for nonlinear two-dimensional (2D) spectroscopy in the terahertz (THz) frequency range which is based on a collinear interaction geometry of a sequence of THz pulses with the sample. The nonlinear polarization is determined by a phase-resolved measurement of the electric field transmitted through the sample as a function of the delay τ between two phase-locked pulses and the "real" time t. The information provided by a single 2D scan along the τ and t axes is equivalent to that from a noncollinear photon-echo setup equipped with four local oscillators, each interacting with a different diffracted order. We address basic concepts of collinear 2D THz spectroscopy, in particular data analysis and phasing issues. Different rephasing and nonrephasing contributions to the third-order response are separated and 2D correlation spectra derived. As a prototype application, 2D correlation spectra of intersubband excitations of electrons in semiconductor quantum wells are presented.
Measurement of accumulation of semiconductor nanocrystal quantum dots by pimephales promelas.
Leigh, Kenton L; Bouldin, Jennifer L; Buchanan, Roger A
2012-01-01
As the production and use of nanomaterials increases, it is important to understand their environmental and biological fate. Because their unmatched chemical, physical, and optical properties make them useful in a wide variety of applications including biomedical imaging, photo-voltaics, and light emitting diodes, the use of semiconductor nanocrystals such as quantum dots (QDs) is increasing rapidly. Although QDs hold great potential in a wide variety of industrial and consumer applications, the environmental implications of these particles is largely unexplored. The nanocrystal core of many types of QDs contains the toxic metal cadmium (Cd), so possible release of Cd from the QD core is cause for concern. Because many types of QDs are miscible in water, QD interactions with aquatic organisms and their environment require more attention. In the present study we used fluorometry to measure time and dose dependent uptake, accumulation, and post-exposure clearance of accumulated QDs in the gut tract by the aquatic vertebrate Pimephales promelas. By using fluorometry, we were able to measure accumulated QD concentrations. To our knowledge, this is the first reported attempt to quantify accumulated QDs in an organism and is an important step in understanding the interactions among QDs in aquatic organisms and environments. PMID:22942867
Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions
Takhar, Kuldeep; Meer, Mudassar; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar
2015-09-15
Quantization in energy level due to confinement is generally observed for semiconductors. This property is used for various quantum devices, and it helps to improve the characteristics of conventional devices. Here, the authors have demonstrated the quantum size effects in ultrathin metal (Ni) layers sandwiched between two large band-gap materials. The metal work function is found to oscillate as a function of its thickness. The thermionic emission current bears the signature of the oscillating work function, which has a linear relationship with barrier heights. This methodology allows direct observation of quantum oscillations in metals at room temperature using a Schottky diode and electrical measurements using source-measure-units. The observed phenomena can provide additional mechanism to tune the barrier height of metal/semiconductor junctions, which are used for various electronic devices.
Anisotropy of the electron g factor in quantum wells based on cubic semiconductors
Alekseev, P. S.
2013-09-15
A new mechanism for the spin splitting of electron levels in asymmetric quantum wells based on GaAs-type semiconductors relative to rotations of the magnetic field in the well plane is suggested. It is demonstrated that the anisotropy of the Zeeman splitting (linear in a magnetic field) arises in asymmetric quantum wells due to the interface spin-orbit terms in the electron Hamiltonian. In the case of symmetric quantum wells, it is shown that the anisotropy of the Zeeman splitting is a cubic function of the magnitude of the magnetic field, depends on the direction of the magnetic field in the interface plane as the fourth-order harmonic, and is governed by the spin-orbit term of the fourth order by the kinematic momentum in the electron Hamiltonian of a bulk semiconductor.
Toxicological studies of semiconductor quantum dots on immune cells.
Ricken, James Bryce; Rios, Lynette; Poschet, Jens Fredrich; Bachand, Marlene; Bachand, George David; Greene, Adrienne Celeste; Carroll-Portillo, Amanda
2008-11-01
Nanoengineered materials hold a vast promise of enabling revolutionary technologies, but also pose an emerging and potentially serious threat to human and environmental health. While there is increasing knowledge concerning the risks posed by engineered nanomaterials, significant inconsistencies exist within the current data based on the high degree of variability in the materials (e.g., synthesis method, coatings, etc) and biological test systems (e.g., cell lines, whole organism, etc). In this project, we evaluated the uptake and response of two immune cell lines (RAW macrophage and RBL mast cells) to nanocrystal quantum dots (Qdots) with different sizes and surface chemistries, and at different concentrations. The basic experimental design followed a 2 x 2 x 3 factorial model: two Qdot sizes (Qdot 520 and 620), two surface chemistries (amine 'NH{sub 2}' and carboxylic acid 'COOH'), and three concentrations (0, 1 nM, and 1 {micro}M). Based on this design, the following Qdots from Evident Technologies were used for all experiments: Qdot 520-COOH, Qdot 520-NH{sub 2}, Qdot 620-COOH, and Qdot 620-NH{sub 2}. Fluorescence and confocal imaging demonstrated that Qdot 620-COOH and Qdot 620-NH{sub 2} nanoparticles had a greater level of internalization and cell membrane association in RAW and RBL cells, respectively. From these data, a two-way interaction between Qdot size and concentration was observed in relation to the level of cellular uptake in RAW cells, and association with RBL cell membranes. Toxicity of both RBL and RAW cells was also significantly dependent on the interaction of Qdot size and concentration; the 1 {micro}M concentrations of the larger, Qdot 620 nanoparticles induced a greater toxic effect on both cell lines. The RBL data also demonstrate that Qdot exposure can induce significant toxicity independent of cellular uptake. A significant increase in TNF-{alpha} and decrease in IL-10 release was observed in RAW cells, and suggested that Qdot exposure
High-Frequency EPR and ENDOR Spectroscopy on Semiconductor Quantum Dots
Baranov, Pavel G.; de Mello Donegá, Celso; Schmidt, Jan
2010-01-01
It is shown that high-frequency electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectroscopy are excellent tools for the investigation of the electronic properties of semiconductor quantum dots (QDs). The great attractions of these techniques are that, in contrast to optical methods, they allow the identification of the dopants and provide information about the spatial distribution of the electronic wave function. This latter aspect is particularly attractive because it allows for a quantitative measurement of the effect of confinement on the shape and properties of the wave function. In this contribution EPR and ENDOR results are presented on doped ZnO QDs. Shallow donors (SDs), related to interstitial Li and Na and substitutional Al atoms, have been identified in this material by pulsed high-frequency EPR and ENDOR spectroscopy. The shallow character of the wave function of the donors is evidenced by the multitude of ENDOR transitions of the 67Zn nuclear spins and by the hyperfine interaction of the 7Li, 23Na and 27Al nuclear spins that are much smaller than for atomic lithium, sodium and aluminium. The EPR signal of an exchange-coupled pair consisting of a shallow donor and a deep Na-related acceptor has been identified in ZnO nanocrystals with radii smaller than 1.5 nm. From ENDOR experiments it is concluded that the deep Na-related acceptor is located at the interface of the ZnO core and the Zn(OH)2 capping layer, while the shallow donor is in the ZnO core. The spatial distribution of the electronic wave function of a shallow donor in ZnO semiconductor QDs has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by ENDOR spectroscopy quantitatively reveal the transition from semiconductor to molecular properties upon reduction of the size of the nanoparticles. In addition, the effect of confinement on the g-factor of SDs in ZnO as well as in CdS QDs
NASA Astrophysics Data System (ADS)
Mondal, Navendu; Paul, Sneha; Samanta, Anunay
2016-07-01
In order to explore the potential of nanocomposites comprising semiconductor quantum dots (QDs) and metal nanoclusters (NCs) in photovoltaic and catalytic applications, the interaction between CdTe QDs and gold NCs, Au10 and Au25, stabilized by histidine, bovine serum albumin (BSA) and glutathione, is studied by an ultrafast transient absorption (TA) technique. Temporal and spectral studies of the transients reveal photoinduced 2-way electron transfer between the two constituents of the nanocomposites, where Au NCs, which generally act as electron donors when used as photosensitizers, perform the role of the efficient electron acceptor. Interestingly, it is found that the electron transfer dynamics in these composites is governed not by the distance of separation of the constituents but by the nature of the surface capping ligands. Despite a large separation between the QDs and NCs in a giant BSA-capped system, a higher electron transfer rate in this composite suggests that unlike other smaller capping agents, which act more like insulators, BSA allows much better electron conduction, as indicated previously.In order to explore the potential of nanocomposites comprising semiconductor quantum dots (QDs) and metal nanoclusters (NCs) in photovoltaic and catalytic applications, the interaction between CdTe QDs and gold NCs, Au10 and Au25, stabilized by histidine, bovine serum albumin (BSA) and glutathione, is studied by an ultrafast transient absorption (TA) technique. Temporal and spectral studies of the transients reveal photoinduced 2-way electron transfer between the two constituents of the nanocomposites, where Au NCs, which generally act as electron donors when used as photosensitizers, perform the role of the efficient electron acceptor. Interestingly, it is found that the electron transfer dynamics in these composites is governed not by the distance of separation of the constituents but by the nature of the surface capping ligands. Despite a large separation
Shor's quantum algorithm using electrons in semiconductor nanostructures
Buscemi, Fabrizio
2011-01-15
Shor's factoring algorithm illustrates the potential power of quantum computation. Here, we present and numerically investigate a proposal for a compiled version of such an algorithm based on a quantum-wire network by exploiting the potential of fully coherent electron transport assisted by the surface acoustic waves. Specifically, a nonstandard approach is used to implement, in a simple form, the quantum circuits of the modular exponentiation execution for the simplest instance of Shor's algorithm, that is, the factorization of N=15. The numerical procedure is based on a time-dependent solution of the multiparticle Schroedinger equation. The near-ideal algorithm performance and the large estimated fidelity indicate the efficiency of the protocol implemented, which also is almost insensitive to small destabilizing effects during quantum computation.
Decoherence and adiabatic transport in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Switkes, Michael
2000-10-01
I present research on ballistic electron transport in lateral GaAs/AlGaAs quantum dots connected to the environment with leads supporting one or more fully transmitting quantum modes. The first part of this dissertation examines electron the phenomena which mediate the transition from quantum mechanical to classical behavior in these quantum dots. Measurements of electron phase coherence time based on the magnitude of weak localization correction are presented as a function both of temperature and of applied bias. The coherence time is found to depend on temperature approximately as a sum of two power laws, tauφ ≈ AT-1 + BT-2, in agreement with the prediction for diffusive two dimensional systems but not with predictions for closed quantum dots or ballistic 2D systems. The effects of a large applied bias can be described with an elevated effective electron temperature calculated from the balance of Joule heating and cooling by Wiedemann-Franz out diffusion of hot electrons. The limits this imposes for quantum dot based technologies are examined through the detailed analysis of a quantum dot magnetometer. The second part of the work presented here focuses on a novel form of electron transport, adiabatic quantum electron pumping, in which a current is driven by cyclic changes in the wave function of a mesoscopic system rather than by an externally imposed bias. After a brief review of other mechanisms which produce a dc current from an ac excitation, measurements of adiabatic pumping are presented. The pumped current (or voltage) is sinusoidal in the phase difference between the two ac voltages deforming the dot potential and fluctuates in both magnitude and direction with small changes in external parameters such as magnetic field. Dependencies of pumping on the strength of the deformations, temperature, and breaking of time-reversal symmetry are also investigated.
Advantages of an indirect semiconductor quantum well system for infrared detection
NASA Technical Reports Server (NTRS)
Yang, Chan-Lon; Somoano, Robert; Pan, Dee-Son
1989-01-01
The infrared intersubband absorption process in quantum well systems with anisotropic bulk effective masses, which usually occurs in indirect semiconductors was analyzed. It is found that the anisotropic effective mass can be utilized to provide allowed intersubband transitions at normal incidence to the quantum well growth direction. This transition is known to be forbidden for cases of isotropic effective mass. This property can be exploited for infrared sensor application of quantum well structures by allowing direct illumination of large surface areas without using special waveguide structures. The 10-micron intersubband absorption in quantum wells made of the silicon-based system Si/Si(1-x)Ge(x) was calculated. It is found that it is readily possible to achieve an absorption constant of the order of 10,000/cm in these Si quantum wells with current doping technology.
Design and synthesis of organic semiconductors with strong noncovalent interactions
NASA Astrophysics Data System (ADS)
Tucker, Neil Maxwell
2008-10-01
The development of organic molecules as active components of electronic and optoelectronic devices has seen unprecedented progress in the past decade. This attention is primarily due to the potential impact on large-area and low-cost fabrication of devices, integrated circuits, flexible displays, and in particular, organic field-effect transistors (OFETs). Organic semiconductors that pack face-to-face in the solid state are of particular interest since they are known to self-assemble into 1-D nanostructures due to strong pi-pi interactions. Engineering linear/planar molecules to pack face-to-face is challenging because the interacting forces between organic molecules are relatively weak. Three approaches were used to induce face-to-face packing in organic semiconductors: (1) several derivatives of hexaazatrinaphthylene, (HATNA), were designed which vary in their degree of hydrogen bonding, rigidity, and electron deficiency. Hydrogen bonded moieties induced strong interaction between cores that formed robust nanowires when subjected to nonpolar solvents. While no device data was measured for these materials, substituents location was found to have a profound effect on the electronic properties; (2) Inspired by S···S interactions found in tetrathiafulvalene (TTF) and electrostatic interactions found in 1,2,5-thiadiazole derivatives, a hybrid of these two molecules was developed (BT-TTF-1). Short intermolecular S···S, S···N, and S···C contacts define the solid state structure of BT-TTF-1 single crystals which pi-stack along the [100]. Theoretical insight into the nature of the interactions revealed that the close contacts are electrostatic in origin rather than the result of London dispersion forces. Thermal evaporation yields a network of poorly connected crystals which significantly limits the mobility. Solvent-cast single-crystal nanowire transistors showed mobilities as large as 0.36 cm2/Vs with excellent device characteristics underscoring the
Exploring semiconductor quantum dots and wires by high resolution electron microscopy
Molina Rubio, Sergio I; Galindo, Pedro; Gonzalez, Luisa; Ripalda, JM; Varela del Arco, Maria; Pennycook, Stephen J
2010-01-01
We review in this communication our contribution to the structural characterisation of semiconductor quantum dots and wires by high resolution electron microscopy, both in phase-contrast and Z-contrast modes. We show how these techniques contribute to predict the preferential sites of nucleation of these nanostructures, and also determine the compositional distribution in 1D and 0D nanostructures. The results presented here were produced in the framework of the European Network of Excellence entitled 'Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE)'.
All quantum dot mode-locked semiconductor disk laser emitting at 655 nm
Bek, R. Kersteen, G.; Kahle, H.; Schwarzbäck, T.; Jetter, M.; Michler, P.
2014-08-25
We present a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM) with emission in the red spectral range. Both the gain and the absorber structure are fabricated by metal-organic vapor-phase epitaxy in an anti-resonant design using quantum dots as active material. A v-shaped cavity is used to tightly focus onto the SESAM, producing pulses with a duration of about 1 ps at a repetition rate of 852 MHz.
Awschalom, D.D.; Crooker, S.A.; Lyo, S.K.; Rickel, D.G.; Samarth, N.
1999-05-24
Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of step-like reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd,Mn)Se quantum wells between O and 60 Tesla. This disorder, measured through the linewidth of low temperature photoluminescence spectra drops abruptly at -19, 36, and 53 Tesla, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction.
Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems
NASA Astrophysics Data System (ADS)
Lau, Wayne Heung
This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton
Controlling Light-Matter Interaction in Semiconductors with Hybrid Nano-Structures
NASA Astrophysics Data System (ADS)
Gehl, Michael R.
Nano-structures, such as photonic crystal cavities and metallic antennas, allow one to focus and store optical energy into very small volumes, greatly increasing light-matter interactions. These structures produce resonances which are typically characterized by how well they confine energy both temporally (quality factor -- Q) and spatially (mode volume -- V). In order to observe non-linear effects, modified spontaneous emission (e.g. Purcell enhancement), or quantum effects (e.g. vacuum Rabi splitting), one needs to maximize the ratio of Q/V while also maximizing the coupling between the resonance and the active medium. In this dissertation I will discuss several projects related by the goal of controlling light-matter interactions using such nano-structures. In the first portion of this dissertation I will discuss the deterministic placement of self-assembled InAs quantum dots, which would allow one to precisely position an optically-active material, for maximum interaction, inside of a photonic crystal cavity. Additionally, I will discuss the use of atomic layer deposition to tune and improve both the resonance wavelength and quality factor of silicon based photonic crystal cavities. Moving from dielectric materials to metals allows one to achieve mode-volumes well below the diffraction limit. The quality factor of these resonators is severely limited by Ohmic loss in the metal; however, the small mode-volume still allows for greatly enhanced light-matter interaction. In the second portion of this dissertation I will investigate the coupling between an array of metallic resonators (antennas) and a nearby semiconductor quantum well. Using time-resolved pump-probe measurements I study the properties of the coupled system and compare the results to a model which allows one to quantitatively compare various antenna geometries.
Self-action effects in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Dneprovskii, V. S.; Kanev, A. R.; Kozlova, M. V.; Smirnov, A. M.
2014-05-01
Two-dimensional (2D) dynamic photonic crystal regime has been utilized to investigate self-diffraction effect and nonlinear optical properties of excitons in CdSe/ZnS colloidal quantum dots (QDs). Self-diffraction at 2D photonic crystal arises for three intersecting beams of Nd+3:YAG laser second harmonic in the case of one-photon resonant excitation of the exciton (electron - hole) transition QDs. The relaxation time of excited excitons has been measured by pump and probe technique at induced one-dimensional transient diffraction grating. Two-exponential decay with initial fast and slow parts was discovered. Self-action effect has been discovered in the case of stationary resonant excitation of excitons in CdSe/ZnS QDs by the beam of second harmonic of powerful 12-nanosecond laser pulses. The bleaching of exciton absorption and the creation of transparency channel (this effect provokes self-diffraction of the second harmonic beam) was explained by the dominating coexisting and competing processes of state filling in stationary excited quantum dots and Stark-shift of exciton spectral band. The peculiarities of the influence of these processes at the change of exciton absorption in quantum dots in the case of different detuning from exciton resonance (quantum dots with different size have been used) was analyzed.
Biexciton induced refractive index changes in a semiconductor quantum dot
NASA Astrophysics Data System (ADS)
Shojaei, S.
2015-06-01
We present a detailed theoretical study of linear and third order nonlinear refractive index changes in a optically driven disk-like GaN quantum dot. In our numerical calculations, we consider the three level system containing biexciton, exciton, and ground states and use the compact density matrix formalism and iterative method to obtain refractive index changes. Variational method through effective mass approximation are employed to calculate the ground state energy of biexciton and exciton states. The evolution of refractive index changes around one, two and three photon resonance is investigated and discussed for different quantum dot sizes and light intensities. Size-dependent three-photon nonlinear refractive index change versus incident photon energy compared to that of two-photon is obtained and analyzed. As main result, we found that around resonance frequency at exciton-biexciton transition the quantum confinement has great influence on the linear change in refractive index so that for very large quantum dots, it decreases. Moreover, it was found that third order refractive index changes for three photon process is strongly dependent on QD size and light intensity. Our study reveals that considering our simple model leads to results which are in good agreement with other rare numerical results. Comparison with experimental results has been done.
Grasselli, Federico; Bertoni, Andrea; Goldoni, Guido
2015-01-21
We study the unitary propagation of a two-particle one-dimensional Schrödinger equation by means of the Split-Step Fourier method, to study the coherent evolution of a spatially indirect exciton (IX) in semiconductor heterostructures. The mutual Coulomb interaction of the electron-hole pair and the electrostatic potentials generated by external gates and acting on the two particles separately are taken into account exactly in the two-particle dynamics. As relevant examples, step/downhill and barrier/well potential profiles are considered. The space- and time-dependent evolutions during the scattering event as well as the asymptotic time behavior are analyzed. For typical parameters of GaAs-based devices, the transmission or reflection of the pair turns out to be a complex two-particle process, due to comparable and competing Coulomb, electrostatic, and kinetic energy scales. Depending on the intensity and anisotropy of the scattering potentials, the quantum evolution may result in excitation of the IX internal degrees of freedom, dissociation of the pair, or transmission in small periodic IX wavepackets due to dwelling of one particle in the barrier region. We discuss the occurrence of each process in the full parameter space of the scattering potentials and the relevance of our results for current excitronic technologies.
NASA Astrophysics Data System (ADS)
Watanabe, Yohei; Hino, Ken-Ichi; Hase, Muneaki; Maeshima, Nobuya
The coherent phonon (CP) generation is one of the representative phenomena induced by ultrashort pulsed laser. In particular, in the initial stage of the CP generation in lightly n-doped Si, the vestige of Fano resonance (FR) manifested in a flash was observed in time-resolved spectroscopy experiments, in which it was speculated that this phenomenon results from the birth of transient polaronic quasiparticles composed of electrons and phonons strongly interacting each other. This study is aimed at constructing a fully-quantum-mechanical model for the CP generation and tracking the origin of the transient FR. We calculate two physical quantities in both of polar and non-polar semiconductors such as GaAs and undoped Si. One is a retarded longitudinal susceptibility which allows one to calculate a transient induced photoemission spectrum. The other is the Fourier-transform of LO-phonon displacement into frequency domain. We have succeeded in showing that the transient FR is exclusively caused in Si in harmony with the experiments, though, not observed in GaAs.
Mondal, Navendu; Paul, Sneha; Samanta, Anunay
2016-08-01
In order to explore the potential of nanocomposites comprising semiconductor quantum dots (QDs) and metal nanoclusters (NCs) in photovoltaic and catalytic applications, the interaction between CdTe QDs and gold NCs, Au10 and Au25, stabilized by histidine, bovine serum albumin (BSA) and glutathione, is studied by an ultrafast transient absorption (TA) technique. Temporal and spectral studies of the transients reveal photoinduced 2-way electron transfer between the two constituents of the nanocomposites, where Au NCs, which generally act as electron donors when used as photosensitizers, perform the role of the efficient electron acceptor. Interestingly, it is found that the electron transfer dynamics in these composites is governed not by the distance of separation of the constituents but by the nature of the surface capping ligands. Despite a large separation between the QDs and NCs in a giant BSA-capped system, a higher electron transfer rate in this composite suggests that unlike other smaller capping agents, which act more like insulators, BSA allows much better electron conduction, as indicated previously. PMID:27396603
Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.
2015-12-15
A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.
Beard, Matthew C; Luther, Joseph M; Semonin, Octavi E; Nozik, Arthur J
2013-06-18
Improving the primary photoconversion process in a photovoltaiccell by utilizing the excess energy that is otherwise lost as heat can lead to an increase in the overall power conversion efficiency (PCE). Semiconductor nanocrystals (NCs) with at least one dimension small enough to produce quantum confinement effects provide new ways of controlling energy flow not achievable in thin film or bulk semiconductors. Researchers have developed various strategies to incorporate these novel structures into suitable solar conversion systems. Some of these methods could increase the PCE past the Shockley-Queisser (SQ) limit of ∼33%, making them viable "third generation photovoltaic" (TGPV) cell architectures. Surpassing the SQ limit for single junction solar cells presents both a scientific and a technological challenge, and the use of semiconductor NCs to enhance the primary photoconversion process offers a promising potential solution. The NCs are synthesized via solution phase chemical reactions producing stable colloidal solutions, where the reaction conditions can be modified to produce a variety of shapes, compositions, and structures. The confinement of the semiconductor NC in one dimension produces quantum films, wells, or discs. Two-dimensional confinement leads to quantum wires or rods (QRs), and quantum dots (QDs) are three-dimensionally confined NCs. The process of multiple exciton generation (MEG) converts a high-energy photon into multiple electron-hole pairs. Although many studies have demonstrated that MEG is enhanced in QDs compared with bulk semiconductors, these studies have either used ultrafast spectroscopy to measure the photon-to-exciton quantum yields (QYs) or theoretical calculations. Implementing MEG in a working solar cell has been an ongoing challenge. In this Account, we discuss the status of MEG research and strategies towards implementing MEG in working solar cells. Recently we showed an external quantum efficiency for photocurrent of greater
NASA Astrophysics Data System (ADS)
Dutta, Poulami
Electron transfer (ET) processes are one of the most researched topics for applications ranging from energy conversion to catalysis. An exciting variation is utilizing colloidal semiconductor nanostructures to explore such processes. Semiconductor quantum dots (QDs) are emerging as a novel class of light harvesting, emitting and charge-separation materials for applications such as solar energy conversion. Detailed knowledge of the quantitative dissociation of the photogenerated excitons and the interfacial charge- (electron/hole) transfer is essential for optimization of the overall efficiency of many such applications. Organic free radicals are the attractive counterparts for studying ET to/from QDs because these undergo single-electron transfer steps in reversible fashion. Nitroxides are an exciting class of stable organic free radicals, which have recently been demonstrated to be efficient as redox mediators in dye-sensitized solar cells, making them even more interesting for the aforementioned studies. This dissertation investigates the interaction between nitroxide free radicals TEMPO (2,2,6,6-tetramethylpiperidine-1-oxyl), 4-amino-TEMPO (4-amino- 2,2,6,6-tetramethylpiperidine-1-oxyl) and II-VI semiconductor (CdSe and CdTe) QDs. The nature of interaction in these hybrids has been examined through ground-state UV-Vis absorbance, steady state and time-resolved photoluminescence (PL) spectroscopy, transient absorbance, upconversion photoluminescence spectroscopy and electron paramagnetic resonance (EPR). The detailed analysis of the PL quenching indicates that the intrinsic charge transfer is ultrafast however, the overall quenching is still limited by the lower binding capacities and slower diffusion related kinetics. Careful analysis of the time resolved PL decay kinetics reveal that the decay rate constants are distributed and that the trap states are involved in the overall quenching process. The ultrafast hole transfer from CdSe QDs to 4-Amino TEMPO observed
Coherent Superconductor-Semiconductor Coupling In The Quantum Hall Regime
NASA Astrophysics Data System (ADS)
Flexner, Soren; Eckstein, James N.
2004-03-01
We present experiments exploring the coherent coupling of the superconducting wave function in niobium nitride, a high critical magnetic field superconductor, to edge states in a two dimensional electron gas (2DEG) in the integer quantum hall regime. The 2DEG is created using molecular beam epitaxy (MBE) growth of AlGaAs/GaAs heterojunctions. Silicon doped InGaAs capping layers are used to facilitate ohmic connection between the 2DEG and niobium nitride superconducting contacts. Both in situ, and ex situ deposited niobium nitride contacts are investigated. The edge states associated with the quantum hall effect provide degenerate channels with very long coherence lengths (>um). The consequences of cooper pair transport through these channels, in the form of Andeev reflection and the Josephson effects, are considered.
Charge transport through a semiconductor quantum dot-ring nanostructure
NASA Astrophysics Data System (ADS)
Kurpas, Marcin; Kędzierska, Barbara; Janus-Zygmunt, Iwona; Gorczyca-Goraj, Anna; Wach, Elżbieta; Zipper, Elżbieta; Maśka, Maciej M.
2015-07-01
Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified by additional gating. In this paper we consider a concentric dot-ring nanostructure (DRN) and show that its transport properties can be drastically modified due to the unique geometry. We calculate the dc current through a DRN in the Coulomb blockade regime and show that it can efficiently work as a single-electron transistor (SET) or a current rectifier. In both cases the transport characteristics strongly depend on the details of the confinement potential. The calculations are carried out for low and high bias regime, the latter being especially interesting in the context of current rectification due to fast relaxation processes.
Quantification techniques and biodistribution of semiconductor quantum dots.
Pic, Emilie; Bezdetnaya, Lina; Guillemin, François; Marchal, Frédéric
2009-03-01
Quantum dots (QDs) are fluorescent inorganic nanocrystals with advantageous optical properties, which have been applied for biomedical purposes including imaging, diagnostic, drug delivery or therapy. Potential toxicity of QDs remains the major barrier to clinical translation, and as such the precise analysis of in vivo QDs distribution and pharmacokinetics is of major importance. Biodistribution studies in animal models are, however, sparse. The present review provides in a first lieu a summary of different techniques, which are currently used for relative quantification of QDs in vivo or their absolute quantification ex vivo. Fluorescence and radioactivity based techniques along with mass-spectrometry detection at the elementary level are addressed in this review. We further introduce biodistribution studies in animal models and discuss the possibilities to modify quantum dots biodistribution in function of different injection ways.
Green chemistry for large-scale synthesis of semiconductor quantum dots.
Liu, Jin-Hua; Fan, Jun-Bing; Gu, Zheng; Cui, Jing; Xu, Xiao-Bo; Liang, Zhi-Wu; Luo, Sheng-Lian; Zhu, Ming-Qiang
2008-05-20
Large-scale synthesis of semiconductor nanocrystals or quantum dots (QDs) with high concentration and high yield through simultaneously increasing the precursor concentration was introduced. This synthetic route conducted in diesel has produced gram-scale CdSe semiconductor quantum dots (In optimal scale-up synthetic condition, the one-pot yield of QDs is up to 9.6g). The reaction has been conducted in open air and at relatively low temperature at 190-230 degrees C in the absence of expensive organic phosphine ligands, aliphatic amine and octadecene, which is really green chemistry without high energy cost for high temperature reaction and unessential toxic chemicals except for Cd, which is the essential building block for QDs. PMID:18399665
Formation of strain-induced quantum dots in gated semiconductor nanostructures
Thorbeck, Ted; Zimmerman, Neil M.
2015-08-15
A long-standing mystery in the field of semiconductor quantum dots (QDs) is: Why are there so many unintentional dots (also known as disorder dots) which are neither expected nor controllable. It is typically assumed that these unintentional dots are due to charged defects, however the frequency and predictability of the location of the unintentional QDs suggests there might be additional mechanisms causing the unintentional QDs besides charged defects. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots. We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.
Decoherence-protected spin-photon quantum gates in a hybrid semiconductor-superconductor circuit
NASA Astrophysics Data System (ADS)
Wang, Li; Tu, Tao; Gong, Bo; Guo, Guang-Can
2015-12-01
High-fidelity gate operations are a crucial function for quantum information processing. This problem is particularly challenging for hybrid systems where coherence and control time scales greatly differ by orders of magnitude among different elements. Here we propose decoherence-protected gate operations in an important class of hybrid system in the context of a spin qubit in semiconductor quantum dots coupled to a superconductor resonator. Our scheme is able to generate complex photon states for various applications even in the presence of practical imperfections: limited available control of the spin-photon hybrid system and demanding spin decoherence in current state-of-the-art devices.
All-optical depletion of dark excitons from a semiconductor quantum dot
Schmidgall, E. R.; Schwartz, I.; Cogan, D.; Gershoni, D.; Gantz, L.; Heindel, T.; Reitzenstein, S.
2015-05-11
Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the dark exciton population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.
Nonlinear photonic diode behavior in energy-graded core-shell quantum well semiconductor rod.
Ko, Suk-Min; Gong, Su-Hyun; Cho, Yong-Hoon
2014-09-10
Future technologies require faster data transfer and processing with lower loss. A photonic diode could be an attractive alternative to the present Si-based electronic diode for rapid optical signal processing and communication. Here, we report highly asymmetric photonic diode behavior with low scattering loss, from tapered core-shell quantum well semiconductor rods that were fabricated to have a large gradient in their bandgap energy along their growth direction. Local laser illumination of the core-shell quantum well rods yielded a huge contrast in light output intensities from opposite ends of the rod.
Effect of charge imbalance parameter on LEKW in ion-implanted quantum semiconductor plasmas
Chaudhary, Sandhya; Yadav, Nishchhal; Ghosh, S.
2015-07-31
In this study we present an analytical investigation on the propagation characteristics of electro-kinetic wave modified through quantum correction term and charge imbalance parameter using quantum hydrodynamic model for an ion-implanted semiconductor plasma. The dispersion relation has been analyzed in two distinct velocity regimes. We found that as the number of negative charges resides on the colloids increases, their role become increasing effective. The present investigation is important for understanding of wave and instability phenomena and can be put to various interesting applications.
Optically pumped semiconductor quantum dot disk laser operating at 1180 nm.
Rautiainen, Jussi; Krestnikov, Igor; Butkus, Mantas; Rafailov, Edik U; Okhotnikov, Oleg G
2010-03-01
We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M(2)<1.2) with circular beam shape operating at 1180 nm in a disk laser geometry.
Zhou, Ming; Chang, Shoude; Grover, Chander
2004-06-28
Further to the optical coding based on fluorescent semiconductor quantum dots (QDs), a concept of using mixtures of multiple single-color QDs for creating highly secret cryptograms based on their absorption/emission properties was demonstrated. The key to readout of the optical codes is a group of excitation lights with the predetermined wavelengths programmed in a secret manner. The cryptograms can be printed on the surfaces of different objects such as valuable documents for security purposes.
NASA Astrophysics Data System (ADS)
Nichele, Fabrizio; Hennel, Szymon; Pietsch, Patrick; Wegscheider, Werner; Stano, Peter; Jacquod, Philippe; Ihn, Thomas; Ensslin, Klaus
2015-05-01
Storing, transmitting, and manipulating information using the electron spin resides at the heart of spintronics. Fundamental for future spintronics applications is the ability to control spin currents in solid state systems. Among the different platforms proposed so far, semiconductors with strong spin-orbit interaction are especially attractive as they promise fast and scalable spin control with all-electrical protocols. Here we demonstrate both the generation and measurement of pure spin currents in semiconductor nanostructures. Generation is purely electrical and mediated by the spin dynamics in materials with a strong spin-orbit field. Measurement is accomplished using a spin-to-charge conversion technique, based on the magnetic field symmetry of easily measurable electrical quantities. Calibrating the spin-to-charge conversion via the conductance of a quantum point contact, we quantitatively measure the mesoscopic spin Hall effect in a multiterminal GaAs dot. We report spin currents of 174 pA, corresponding to a spin Hall angle of 34%.
Interaction picture density matrix quantum Monte Carlo
Malone, Fionn D. Lee, D. K. K.; Foulkes, W. M. C.; Blunt, N. S.; Shepherd, James J.; Spencer, J. S.
2015-07-28
The recently developed density matrix quantum Monte Carlo (DMQMC) algorithm stochastically samples the N-body thermal density matrix and hence provides access to exact properties of many-particle quantum systems at arbitrary temperatures. We demonstrate that moving to the interaction picture provides substantial benefits when applying DMQMC to interacting fermions. In this first study, we focus on a system of much recent interest: the uniform electron gas in the warm dense regime. The basis set incompleteness error at finite temperature is investigated and extrapolated via a simple Monte Carlo sampling procedure. Finally, we provide benchmark calculations for a four-electron system, comparing our results to previous work where possible.
Interaction picture density matrix quantum Monte Carlo.
Malone, Fionn D; Blunt, N S; Shepherd, James J; Lee, D K K; Spencer, J S; Foulkes, W M C
2015-07-28
The recently developed density matrix quantum Monte Carlo (DMQMC) algorithm stochastically samples the N-body thermal density matrix and hence provides access to exact properties of many-particle quantum systems at arbitrary temperatures. We demonstrate that moving to the interaction picture provides substantial benefits when applying DMQMC to interacting fermions. In this first study, we focus on a system of much recent interest: the uniform electron gas in the warm dense regime. The basis set incompleteness error at finite temperature is investigated and extrapolated via a simple Monte Carlo sampling procedure. Finally, we provide benchmark calculations for a four-electron system, comparing our results to previous work where possible.
Interacting quantum fields and the chronometric principle
Segal, I. E.
1976-01-01
A form of interaction in quantum field theory is described that is physically intrinsic rather than superimposed via a postulated nonlinearity on a hypothetical free field. It derives from the extension to general symmetries of the distinction basic for the chronometric cosmology between the physical (driving) and the observed energies, together with general precepts of quantum field theory applicable to nonunitary representations. The resulting interacting field is covariant, causal, involves real particle production, and is devoid of nontrivial ultraviolet divergences. Possible physical applications are discussed. PMID:16592353
Theory of electron g-tensor in bulk and quantum-well semiconductors
NASA Astrophysics Data System (ADS)
Lau, Wayne H.; Flatte', Michael E.
2004-03-01
We present quantitative calculations for the electron g-tensors in bulk and quantum-well semiconductors based on a generalized P.p envelope function theory solved in a fourteen-band restricted basis set. The dependences of g-tensor on structure, magnetic field, carrier density, temperature, and spin polarization have been explored and will be described. It is found that at temperatures of a few Kelvin and fields of a few Tesla, the g-tensors for bulk semiconductors develop quasi-steplike dependences on carrier density or magnetic field due to magnetic quantization, and this effect is even more pronounced in quantum-well semiconductors due to the additional electric quantization along the growth direction. The influence of quantum confinement on the electron g-tensors in QWs is studied by examining the dependence of electron g-tensors on well width. Excellent agreement between these calculated electron g-tensors and measurements [1-2] is found for GaAs/AlGaAs QWs. This work was supported by DARPA/ARO. [1] A. Malinowski and R. T. Harley, Phys. Rev. B 62, 2051 (2000);[2] Le Jeune et al., Semicond. Sci. Technol. 12, 380 (1997).
Charged quantum dot micropillar system for deterministic light-matter interactions
NASA Astrophysics Data System (ADS)
Androvitsaneas, P.; Young, A. B.; Schneider, C.; Maier, S.; Kamp, M.; Höfling, S.; Knauer, S.; Harbord, E.; Hu, C. Y.; Rarity, J. G.; Oulton, R.
2016-06-01
Quantum dots (QDs) are semiconductor nanostructures in which a three-dimensional potential trap produces an electronic quantum confinement, thus mimicking the behavior of single atomic dipole-like transitions. However, unlike atoms, QDs can be incorporated into solid-state photonic devices such as cavities or waveguides that enhance the light-matter interaction. A near unit efficiency light-matter interaction is essential for deterministic, scalable quantum-information (QI) devices. In this limit, a single photon input into the device will undergo a large rotation of the polarization of the light field due to the strong interaction with the QD. In this paper we measure a macroscopic (˜6∘ ) phase shift of light as a result of the interaction with a negatively charged QD coupled to a low-quality-factor (Q ˜290 ) pillar microcavity. This unexpectedly large rotation angle demonstrates that this simple low-Q -factor design would enable near-deterministic light-matter interactions.
Quantum well states in Rashba semiconductor BiTeI
NASA Astrophysics Data System (ADS)
He, Yang; Zhu, Zhihuai; Hamidian, Mohammad; Chen, Pengcheng; Yam, Yau Chuen; Hoffman, Jennifer
BiTeI displays large Rashba-type spin splitting in both valence and conduction bands. In this work, we use scanning tunneling microscopy to reveal the bipolar nature of BiTeI, confirming the previously observed p-n junction electronic structure. We also discover two-dimensional quantum well states both below and above the semiconducting gap on the Te-terminated surface. This work sheds light on the origin of the giant Rashba splitting in the system. This effort is funded by the NSF Grant DMR-1410480.
Quantum many-body interactions in digital oxide superlattices.
Monkman, Eric J; Adamo, Carolina; Mundy, Julia A; Shai, Daniel E; Harter, John W; Shen, Dawei; Burganov, Bulat; Muller, David A; Schlom, Darrell G; Shen, Kyle M
2012-10-01
Controlling the electronic properties of interfaces has enormous scientific and technological implications and has been recently extended from semiconductors to complex oxides that host emergent ground states not present in the parent materials. These oxide interfaces present a fundamentally new opportunity where, instead of conventional bandgap engineering, the electronic and magnetic properties can be optimized by engineering quantum many-body interactions. We use an integrated oxide molecular-beam epitaxy and angle-resolved photoemission spectroscopy system to synthesize and investigate the electronic structure of superlattices of the Mott insulator LaMnO(3) and the band insulator SrMnO(3). By digitally varying the separation between interfaces in (LaMnO(3))(2n)/(SrMnO(3))(n) superlattices with atomic-layer precision, we demonstrate that quantum many-body interactions are enhanced, driving the electronic states from a ferromagnetic polaronic metal to a pseudogapped insulating ground state. This work demonstrates how many-body interactions can be engineered at correlated oxide interfaces, an important prerequisite to exploiting such effects in novel electronics. PMID:22902897
Quantum centipedes: collective dynamics of interacting quantum walkers
NASA Astrophysics Data System (ADS)
Krapivsky, P. L.; Luck, J. M.; Mallick, K.
2016-08-01
We consider the quantum centipede made of N fermionic quantum walkers on the one-dimensional lattice interacting by means of the simplest of all hard-bound constraints: the distance between two consecutive fermions is either one or two lattice spacings. This composite quantum walker spreads ballistically, just as the simple quantum walk. However, because of the interactions between the internal degrees of freedom, the distribution of its center-of-mass velocity displays numerous ballistic fronts in the long-time limit, corresponding to singularities in the empirical velocity distribution. The spectrum of the centipede and the corresponding group velocities are analyzed by direct means for the first few values of N. Some analytical results are obtained for arbitrary N by exploiting an exact mapping of the problem onto a free-fermion system. We thus derive the maximal velocity describing the ballistic spreading of the two extremal fronts of the centipede wavefunction, including its non-trivial value in the large-N limit.
Profiling the local carrier concentration across a semiconductor quantum dot
Walrath, J. C.; Lin, Yen-Hsiang; Huang, S.; Goldman, R. S.
2015-05-11
We profile the local carrier concentration, n, across epitaxial InAs/GaAs quantum dots (QDs) consisting of 3D islands on top of a 2D alloy layer. We use scanning thermoelectric microscopy to measure a profile of the temperature gradient-induced voltage, which is converted to a profile of the local Seebeck coefficient, S. The S profile is then converted to a conduction band-edge profile and compared with Poisson-Schrodinger band-edge simulations. Our combined computational-experimental approach suggests a reduced carrier concentration in the QD center in comparison to that of the 2D alloy layer. The relative roles of free carrier trapping and/or dopant expulsion are discussed.
Barrier penetration effects on thermopower in semiconductor quantum wells
Vaidya, R. G.; Sankeshwar, N. S. Mulimani, B. G.
2014-01-15
Finite confinement effects, due to the penetration of the electron wavefunction into the barriers of a square well potential, on the low–temperature acoustic-phonon-limited thermopower (TP) of 2DEG are investigated. The 2DEG is considered to be scattered by acoustic phonons via screened deformation potential and piezoelectric couplings. Incorporating the barrier penetration effects, the dependences of diffusion TP and phonon drag TP on barrier height are studied. An expression for phonon drag TP is obtained. Numerical calculations of temperature dependences of mobility and TP for a 10 nm InN/In {sub x}Ga{sub 1−x}N quantum well for different values of x show that the magnitude and behavior of TP are altered. A decrease in the barrier height from 500 meV by a factor of 5, enhances the mobility by 34% and reduces the TP by 58% at 20 K. Results are compared with those of infinite barrier approximation.
Transport and photodetection in self-assembled semiconductor quantum dots.
Razeghi, M; Lim, H; Tsao, S; Szafraniec, J; Zhang, W; Mi, K; Movaghar, B
2005-02-01
A great step forward in science and technology was made when it was discovered that lattice mismatch can be used to grow highly ordered, artificial atom-like structures called self-assembled quantum dots. Several groups have in the meantime successfully demonstrated useful infrared photodetection devices which are based on this technology. The new physics is fascinating, and there is no doubt that many new applications will be found when we have developed a better understanding of the underlying physical processes, and in particular when we have learned how to integrate the exciting new developments made in nanoscopic addressing and molecular self-assembly methods with semiconducting dots. In this paper we examine the scientific and technical questions encountered in current state of the art infrared detector technology and suggest ways of overcoming these difficulties. Promoting simple physical pictures, we focus in particular on the problem of high temperature detector operation and discuss the origin of dark current, noise, and photoresponse.
Electric field control of spin splitting in III-V semiconductor quantum dots without magnetic field
NASA Astrophysics Data System (ADS)
Prabhakar, Sanjay; Melnik, Roderick
2015-10-01
We provide an alternative means of electric field control for spin manipulation in the absence of magnetic fields by transporting quantum dots adiabatically in the plane of two-dimensional electron gas. We show that the spin splitting energy of moving quantum dots is possible due to the presence of quasi-Hamiltonian that might be implemented to make the next generation spintronic devices of post CMOS technology. Such spin splitting energy is highly dependent on the material properties of semiconductor. It turns out that this energy is in the range of meV and can be further enhanced with increasing pulse frequency. In particular, we show that quantum oscillations in phonon mediated spin-flip behaviors can be observed. We also confirm that no oscillations in spin-flip behaviors can be observed for the pure Rashba or pure Dresselhaus cases.
Quantum-corrected drift-diffusion models for transport in semiconductor devices
De Falco, Carlo; Gatti, Emilio; Lacaita, Andrea L.; Sacco, Riccardo . E-mail: riccardo.sacco@mate.polimi.it
2005-04-10
In this paper, we propose a unified framework for Quantum-corrected drift-diffusion (QCDD) models in nanoscale semiconductor device simulation. QCDD models are presented as a suitable generalization of the classical drift-diffusion (DD) system, each particular model being identified by the constitutive relation for the quantum-correction to the electric potential. We examine two special, and relevant, examples of QCDD models; the first one is the modified DD model named Schroedinger-Poisson-drift-diffusion, and the second one is the quantum-drift-diffusion (QDD) model. For the decoupled solution of the two models, we introduce a functional iteration technique that extends the classical Gummel algorithm widely used in the iterative solution of the DD system. We discuss the finite element discretization of the various differential subsystems, with special emphasis on their stability properties, and illustrate the performance of the proposed algorithms and models on the numerical simulation of nanoscale devices in two spatial dimensions.
Coherent optical spectroscopy of a strongly coupled semiconductor microcavity quantum-dot system
NASA Astrophysics Data System (ADS)
Srinivasan, Kartik; Painter, Oskar
2008-03-01
Chip-based systems involving a semiconductor microcavity coupled to an embedded quantum dot (QD) offer a scalable, stable platform for optical cavity quantum electrodynamics. To harness this potential in a manner consistent with many protocols for quantum information processing, the system must be coherently probed and manipulated. However, experiments in these systems have largely relied on incoherent excitation through photoluminescence (PL). Here, we describe recent experiments [1] in which a fiber taper waveguide is used to perform steady-state coherent linear and nonlinear optical spectroscopy of a strongly coupled microcavity-QD system, probing the system on its photonic channel (rather than its matter channel, as in PL). Under weak driving, vacuum Rabi splitting is observed, while increasing the drive strength reveals saturation for an average intracavity photon number of less than one. [1] K. Srinivasan and O. Painter (2007), to appear in Nature, Dec. 6, 2007 (preprint: physics/0707.3311).
III-V semiconductor quantum well and superlattice detectors
NASA Astrophysics Data System (ADS)
Walther, Martin; Fuchs, Frank; Schneider, Harald; Fleissner, Joachim; Schmitz, J.; Pletschen, Wilfried; Braunstein, Juergen; Ziegler, Johann; Cabanski, Wolfgang A.; Koidl, Peter; Weimann, Guenter
1998-10-01
The paper reviews the development of IR detectors for the 8 - 12 micrometer wavelength range based on GaAs/AlGaAs quantum well structures and InAs/(GaIn)Sb short-period superlattices (SPSLs) at the Fraunhofer-Institute IAF. Photoconductive GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are used for the fabrication of starring IR cameras for thermal imaging in the third atmospheric window. The long wavelength infrared (LWIR) camera, devleoped in cooperation with AEG Infrarot-Module (AIM), consists of a two-dimensional focal plane array (FPA) with 256 X 256 detector elements, flip- chip bonded to a read-out integrated circuit (ROIC). The technology for the fabrication of FPAs, electrical and optical properties of single detector elements in the two-dimensional arrangement and the properties of the LWIR camera system are reported. A noise equivalent temperature difference (NETD) below 10 mK has been measured at an operation temperature of T equals 65 K with an integration time of 20 ms. More than 99.8% of all pixels are working and no cluster defects are observed. InAs/(GaIn)Sb SPSLs with a broken gap type-II band alignment are well suited for the fabrication of IR detectors covering the 3 - 12 micrometer spectral range. Due to the lattice mismatch of the InAs/(GaIn)Sb SPSL with respect to GaSb, tight control of thickness and composition of the layers and a controlled formation of the chemical bonds across the interface in the SPSLs are used for strain compensation. Photodiodes with a cut-off wavelength (lambda) c equals 8 micrometer and a current responsivity R(lambda ) equals 2 A/W exhibit a dynamic impedance of R0A equals 1k(Omega) cm2 at T equals 77 K. This leads to a Johnson- noise limited detectivity in excess of D* equals 1 X 1012 cm(Hz)1/2/W for these type of detectors.
Pseudopotential Calculation of the Excited States of Semiconductor Quantum Dots
NASA Astrophysics Data System (ADS)
Williamson, Andrew; Wang, Lin-Wang; Fu, Hiauxiang; Zunger, Alex
1998-03-01
We present the results of our pseudopotential calculations of up to 10 single-exciton states in free standing InP, InAs and CdSe quantum dots with diameters ranging from 10 to 50ÅIn the first step we solve for ≈20-40 single particle hole and electron states using a screened atomic pseudopotential Hamiltonian[1], solved within a plane wave basis using the Folded Spectrum Method[2]. In the second step, we calculate the electron-hole Coulomb energy[3] and the dipole transition probability for each of the ≈1000 possible single particle excitations. We present a comparison of the size scaling of the peaks in absorption and emission spectra obtained in our calculations with those from recent experiments and those of the effective mass based, k.p method. We also compare pseudopotential and k.p predictions of the character of the initial and final single particle states associated with each of these emission peaks. [1] J. Kim, A.J. Williamson, L.W. Wang, S.H-. Wei and A. Zunger, submitted to Phys. Rev. B [2] L. W. Wang and A. Zunger, J. Chem. Phys. 100, 2394 (1994). [3] A. Franceschetti and A. Zunger, Phys. Rev. Lett. 78, 915 (1997). *Supported under BES/OER/DMS contract No. DE---AC36---83CH10093
Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator.
Ngo, C Y; Yoon, S F; Loke, W K; Cao, Q; Lim, D R; Wong, Vincent; Sim, Y K; Chua, S J
2008-12-01
In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 mum, width of 10 mum, and length of 1.0 mm. Photocurrent measurement reveals a Stark shift of ~5 meV (~7 nm) at reverse bias of 3 V (75 kV/cm) and broadening of the resonance peak due to field ionization of electrons and holes was observed for E-field larger than 25 kV/cm. Investigation at wavelength range of 1,300-1320 nm reveals that the largest absorption change occurs at 1317 nm. Optical transmission measurement at this wavelength shows insertion loss of ~8 dB, and extinction ratio of ~5 dB at reverse bias of 5 V. Consequently, methods to improve the performance of the QD-EAM are proposed. We believe that QDs are promising for EAM and the performance of QD-EAM will improve with increasing research efforts.
Constraint algebra for interacting quantum systems
NASA Astrophysics Data System (ADS)
Fubini, S.; Roncadelli, M.
1988-04-01
We consider relativistic constrained systems interacting with external fields. We provide physical arguments to support the idea that the quantum constraint algebra should be the same as in the free quantum case. For systems with ordering ambiguities this principle is essential to obtain a unique quantization. This is shown explicitly in the case of a relativistic spinning particle, where our assumption about the constraint algebra plus invariance under general coordinate transformations leads to a unique S-matrix. On leave from Dipartimento di Fisica Nucleare e Teorica, Università di Pavia and INFN, I-27100 Pavia, Italy.
The role of visualization in the simulation of quantum electronic transport in semiconductors
Kluksdahl, N.C.; Kriman, A.M.; Ferry, D.K. )
1989-08-01
In simulating a semiconductor device, examining the raw numerical data rarely fosters an understanding of physical processes within the device. Visualization tools provide a useful method for interpreting this voluminous data and allow a better understanding of the semiconductor. Pictorial representation of data can reveal results not readily discerned from the data alone. Furthermore, animating a sequence of data frames permits visualization of time-evolving systems. These advantages hold especially true when studying ultrasmall devices such as the resonant tunneling diode. The RTD is a gallium-arsenide semiconductor structure in which two thin layers (a few nanometers thick) of aluminum gallium arsenide (AlGaAs) form quantum tunneling barriers around a thin layer of gallium arsenide. The quantum tunneling probability in this structure possesses a sharp peak, corresponding to resonant tunneling. Experimental devices incorporating this structure show negative differential conductivity in their current-voltage (I-V) characteristics, as predicted by theory. Efforts to model the RTD met with only limited success until employment of the Wigner function formalism.
Optical response of a quantum dot-metal nanoparticle hybrid interacting with a weak probe field.
Kosionis, Spyridon G; Terzis, Andreas F; Sadeghi, Seyed M; Paspalakis, Emmanuel
2013-01-30
We study optical effects in a hybrid system composed of a semiconductor quantum dot and a spherical metal nanoparticle that interacts with a weak probe electromagnetic field. We use modified nonlinear density matrix equations for the description of the optical properties of the system and obtain a closed-form expression for the linear susceptibilities of the quantum dot, the metal nanoparticle, and the total system. We then investigate the dependence of the susceptibility on the interparticle distance as well as on the material parameters of the hybrid system. We find that the susceptibility of the quantum dot exhibits optical transparency for specific frequencies. In addition, we show that there is a range of frequencies of the applied field for which the susceptibility of the semiconductor quantum dot leads to gain. This suggests that in such a hybrid system quantum coherence can reverse the course of energy transfer, allowing flow of energy from the metallic nanoparticle to the quantum dot. We also explore the susceptibility of the metal nanoparticle and show that it is strongly influenced by the presence of the quantum dot.
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.
2015-01-01
As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping.
Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S
2015-06-03
As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.
Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells
NASA Astrophysics Data System (ADS)
Ganichev, S. D.
The spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electric current drives a transverse spin current and causes a nonequilibrium spin accumulation near the sample boundary,1,2 the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current3,4 or the reverse process, in which an electrical current generates a non-equilibrium spin-polarization,5-9 are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias driven current is an essential prerequisite. Then spin separation is caused via spin-orbit coupling either by Mott scattering (extrinsic spin Hall effect) or by spin splitting of the band structure (intrinsic spin Hall effect). Recently an elementary effect causing spin separation which is fundamentally different from that of the spin Hall effect has been observed.10 In contrast to the spin Hall effect it does not require an electric current to flow: it is spin separation achieved by spin-dependent scattering of electrons in media with suitable symmetry. It is show that by free carrier (Drude) absorption of terahertz radiation spin separation is achieved in a wide range of temperatures from liquid helium temperature up to room temperature. Moreover the experimental results demonstrate that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy relaxation processes of non-equilibrium carriers. In order to demonstrate the existence of the spin separation due to asymmetric scattering the pure spin current was converted into an electric current. It is achieved by application of a magnetic field which polarizes spins. This is analogues to spin-dependent scattering in transport experiments: spin-dependent scattering in an unpolarized electron gas causes the extrinsic spin Hall effect, whereas in a spin-polarized electron
Accurate band gaps of semiconductors and insulators from Quantum Monte Carlo calculations
NASA Astrophysics Data System (ADS)
Nazarov, Roman; Hood, Randolph; Morales, Miguel
2015-03-01
Ab initio calculations are useful tools in developing materials with targeted band gaps for semiconductor industry. Unfortunately, the main workhorse of ab initio calculations - density functional theory (DFT) in local density approximation (LDA) or generalized gradient approximation (GGA) underestimates band gaps. Several approaches have been proposed starting from empirical corrections to more elaborate exchange-correlation functionals to deal with this problem. But none of these work well for the entire range of semiconductors and insulators. Deficiencies of DFT as a mean field method can be overcome using many-body techniques. Quantum Monte Carlo (QMC) methods can obtain a nearly exact numerical solutions of both total energies and spectral properties. Diffusion Monte Carlo (DMC), the most widely used QMC method, has been shown to provide gold standard results for different material properties, including spectroscopic constants of dimers and clusters, equation of state for solids, accurate descriptions of defects in metals and insulators. To test DMC's accuracy in a wider range of semiconductors and insulators we have computed band gaps of several semiconductors and insulators. We show that DMC can provide superior agreement with experiment compared with more traditional DFT approaches including high level exchange-correlation functionals (e.g. HSE).
NASA Astrophysics Data System (ADS)
Kim, Jungho
2013-11-01
We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.
Quantum Monte Carlo calculations for point defects in semiconductors
NASA Astrophysics Data System (ADS)
Hennig, Richard
2010-03-01
Point defects in silicon have been studied extensively for many years. Nevertheless the mechanism for self diffusion in Si is still debated. Direct experimental measurements of the selfdiffusion in silicon are complicated by the lack of suitable isotopes. Formation energies are either obtained from theory or indirectly through the analysis of dopant and metal diffusion experiments. Density functional calculations predict formation energies ranging from 3 to 5 eV depending on the approximations used for the exchange-correlation functional [1]. Analysis of dopant and metal diffusion experiments result in similar broad range of diffusion activation energies of 4.95 [2], 4.68 [3], 2.4 eV [4]. Assuming a migration energy barrier of 0.1-0.3 eV [5], the resulting experimental interstitial formation energies range from 2.1 - 4.9 eV. To answer the question of the formation energy of Si interstitials we resort to a many-body description of the wave functions using quantum Monte Carlo (QMC) techniques. Previous QMC calculations resulted in formation energies for the interstitials of around 5 eV [1,6]. We present a careful analysis of all the controlled and uncontrolled approximations that affect the defect formation energies in variational and diffusion Monte Carlo calculations. We find that more accurate trial wave functions for QMC using improved Jastrow expansions and most importantly a backflow transformation for the electron coordinates significantly improve the wave functions. Using zero-variance extrapolation, we predict interstitial formation energies in good agreement with hybrid DFT functionals [1] and recent GW calculations [7]. [4pt] [1] E. R. Batista, J. Heyd, R. G. Hennig, B. P. Uberuaga, R. L. Martin, G. E. Scuseria, C. J. Umrigar, and J. W. Wilkins. Phys. Rev. B 74, 121102(R) (2006).[0pt] [2] H. Bracht, E. E. Haller, and R. Clark-Phelps, Phys. Rev. Lett. 81, 393 (1998). [0pt] [3] A. Ural, P. B. Griffin, and J. D. Plummer, Phys. Rev. Lett. 83, 3454 (1999). [0pt
Hidden quantum mirage by negative refraction in semiconductor P-N junctions
NASA Astrophysics Data System (ADS)
Zhang, Shu-Hui; Zhu, Jia-Ji; Yang, Wen; Lin, Hai-Qing; Chang, Kai
2016-08-01
We predict a robust quantum interference phenomenon in a semiconductor P-N junction: with a local pump on one side of the junction, the response of a local probe on the other side behaves as if the disturbance emanates not from the pump but instead from its mirror image about the junction. This phenomenon follows from the matching of Fermi surfaces of the constituent materials, thus it is robust against the details of the junction (e.g., width, potential profile, and even disorder), in contrast to the widely studied anomalous focusing caused by negative refraction. The recently fabricated P-N junctions in 2D semiconductors provide ideal platforms to explore this phenomenon and its applications to dramatically enhance charge and spin transport as well as carrier-mediated long-range correlation.
Photoemission and Masing in a Cavity-Coupled Semiconductor Double Quantum Dot
NASA Astrophysics Data System (ADS)
Petta, Jason
2015-05-01
Semiconductor circuit QED devices are exciting platforms for studying the coupled dynamics of single charges, photons, and phonons. I will describe a newly discovered maser, which is driven by single electron tunneling events that result in gigahertz frequency photon emission. Semiconductor double quantum dots, sometimes referred to as electrically tunable ``artificial molecules,'' serve as the gain medium and are placed inside of a high quality factor microwave cavity. Maser action is verified by comparing the statistics of the emitted microwave field above and below the maser threshold. Furthermore, by driving the cavity with a seed tone, it is possible to injection lock the maser, greatly reducing the emission linewidth. The frequency range over which the maser can be injection locked closely follows predictions from Adler's equation. Research was performed in collaboration with Yinyu Liu, Jiri Stehlik, Christopher Eichler, Michael Gullans, and Jacob Taylor. We acknowledge support from the Sloan and Packard Foundations, ARO, DARPA, and the NSF.
NASA Astrophysics Data System (ADS)
H, R. Hamedi; M, R. Mehmannavaz; Hadi, Afshari
2015-08-01
The effects of optical field on the phenomenon of optical bistability (OB) are investigated in a K-type semiconductor double quantum well (SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing. Project supported by the Lithuanian Research Council (Grant No. VP1-3.1-ŠM-01-V-03-001).
Quantum confinement in semiconductor nanofilms: Optical spectra and multiple exciton generation
NASA Astrophysics Data System (ADS)
Khmelinskii, Igor; Makarov, Vladimir I.
2016-04-01
We report optical absorption and photoluminescence (PL) spectra of Si and SnO2 nanocrystalline films in the UV-vis-NIR range, featuring discrete bands resulting from transverse quantum confinement, observed in the optical spectra of nanofilms for the first time ever. The film thickness ranged from 3.9 to 12.2 nm, depending on the material. The results are interpreted within the particle-in-a-box model, with infinite walls. The calculated values of the effective electron mass are independent on the film thickness and equal to 0.17mo (Si) and 0.21mo (SnO2), with mo the mass of the free electron. The second calculated model parameter, the quantum number n of the HOMO (valence band), was also thickness-independent: 8.00 (Si) and 7.00 (SnO2). The transitions observed in absorption all start at the level n and correspond to Δn = 1, 2, 3, …. The photoluminescence bands exhibit large Stokes shifts, shifting to higher energies with increased excitation energy. In effect, nanolayers of Si, an indirect-gap semiconductor, behave as a direct-gap semiconductor, as regards the transverse-quantized level system. A prototype Si-SnO2 nanofilm photovoltaic cell demonstrated photoelectron quantum yields achieving 2.5, showing clear evidence of multiple exciton generation, for the first time ever in a working nanofilm device.
Sokolova, Z N; Tarasov, I S; Asryan, L V
2013-05-31
The threshold characteristics of semiconductor lasers are studied theoretically when the electroneutrality in quantum wells is violated. It is shown that even with the infinitely large threshold concentration of the charge carriers of one sign in the wells, the minimum threshold concentration of the carriers of the opposite sign is nonzero. It is found that in InGaAs/GaAs/AlGaAs heterostructures emitting near the wavelength 1.044 {mu}m, in a wide range of values of the electron concentration in the wells the threshold concentrations of free electrons and holes in the waveguide region are small, the contribution of the recombination current in the waveguide region to the total threshold current is negligible and in the case of a single quantum well, the threshold current density is virtually constant, i.e., the violation of electroneutrality in the InGaAs/GaAs/AlGaAs structures with a single quantum well has almost no effect on the threshold current. In the structures with two or three wells the violation of electroneutrality manifests itself much stronger and can lead to either a decrease or an increase in the threshold current. (semiconductor lasers. physics and technology)
NASA Astrophysics Data System (ADS)
Lyo, S. K.
1989-10-01
The effect of carrier-impurity interactions on luminescence- and excitation-spectroscopy line shapes and the Landau-level spectral density in a strong quantizing magnetic field is examined in modulation-doped semiconductor quantum wells. The line-shape function is obtained by summing the ``ladder diagrams,'' extending our previous ``one-rung'' approximation. Apart from yielding a line broadening, the carrier-impurity interaction is found to induce off-diagonal transitions (ODT) (n-->n' n'≠n) between the Landau levels in the conduction and valence bands, breaking the usual n-->n selection rule. Here the first and second integers indicate the Landau quantum numbers in the conduction (valence) and valence (conduction) bands, respectively, for luminescence (excitation), for example, in an n-type system. The Landau-level spectral density (essential for obtaining the line-shape functions) is investigated by a self-consistent Born approximation which includes inter-Landau-level impurity scattering. The theory is applied to an n-type strained InxGa1-xAs/GaAs quantum well, where optical transitions arise between the conduction band and the strain-split in-plane ``light-hole'' band. For excitation spectra, the theory predicts that ODT introduce lines below the usual nF-->nF threshold transition as well as satellite lines between the usual main n-->n lines above the threshold (i.e., n>=nF). Here nF is the quantum number of the lowest-lying empty or partially filled conduction-band Landau level. The luminescence line shape is dominated by ODT 1, 2,...-->0 (in addition to the main 0-->0 transition) at low temperatures and by the usual n-->n transitions at high temperatures. The accuracy of the ``one-rung'' approximation is assessed.
Interaction picture density matrix quantum Monte Carlo.
Malone, Fionn D; Blunt, N S; Shepherd, James J; Lee, D K K; Spencer, J S; Foulkes, W M C
2015-07-28
The recently developed density matrix quantum Monte Carlo (DMQMC) algorithm stochastically samples the N-body thermal density matrix and hence provides access to exact properties of many-particle quantum systems at arbitrary temperatures. We demonstrate that moving to the interaction picture provides substantial benefits when applying DMQMC to interacting fermions. In this first study, we focus on a system of much recent interest: the uniform electron gas in the warm dense regime. The basis set incompleteness error at finite temperature is investigated and extrapolated via a simple Monte Carlo sampling procedure. Finally, we provide benchmark calculations for a four-electron system, comparing our results to previous work where possible. PMID:26233116
Exchange Instabilities in Semiconductor Double-Quantum-Well Systems
NASA Astrophysics Data System (ADS)
Zheng, Lian; Ortalano, M. W.; Das Sarma, S.
1997-03-01
We study interaction-driven spontaneous spin and pseudospin (layer degree of freedom) polarization instabilities in double-layer electron systems in the Hartree-Fock approximation (HFA) and in self-consistent local density and local spin density approximations ( LDA and LSDA). Within the HFA, both spin and pseudospin instabilities are found at low electron densities. However, this spontaneous pseudospin polarization is an ``easy-plane'' magnetization rather than a bilayer to monolayer charge transfer transition. Correlation effects are treated in self-consistent LDA and LSDA calculations, which give qualitatively the same results as the HFA. Recent experimentsfootnote Y. Katayama, D.C. Tsui, H.C. Manoharan, and M. Shayegan, Surf. Sci. 305, 405 (1994); K. Katayama et al., Phys. Rev. B 52, 14817 (1995); X. Ying, S.R. Parihar, H.C. Manoharan, and M. Shayegan, ibid 52, 11611 (1995); N.K. Patel et al., ibid 53, 15433 (1996). involving charge transfers in double-layer systems under an external bias potential are quantitatively explained by the self-consistent LDA and LSDA calculations. preprint
Nonlinear quantum optics mediated by Rydberg interactions
NASA Astrophysics Data System (ADS)
Firstenberg, O.; Adams, C. S.; Hofferberth, S.
2016-08-01
By mapping the strong interaction between Rydberg excitations in ultra-cold atomic ensembles onto single photons via electromagnetically induced transparency, it is now possible to realize a medium which exhibits a strong optical nonlinearity at the level of individual photons. We review the theoretical concepts and the experimental state-of-the-art of this exciting new field, and discuss first applications in the field of all-optical quantum information processing.
Surfactant-assisted synthesis of water-soluble and biocompatible semiconductor quantum dot-micelles.
Brinker, C. Jeffrey; Bunge, Scott D.; Gabaldon, John; Fan, Hongyou; Scullin, Chessa; Leve, Erik W.; Wilson, Michael C.; Tallant, David Robert; Boyle, Timothy J.
2005-04-01
We report a simple, rapid approach to synthesize water-soluble and biocompatible fluorescent quantum dot (QD) micelles by encapsulation of monodisperse, hydrophobic QDs within surfactant/lipid micelles. Analyses of UV-vis and photo luminescence spectra, along with transmission electron microscopy, indicate that the water-soluble semiconductor QD micelles are monodisperse and retain the optical properties of the original hydrophobic QDs. The QD micelles were shown to be biocompatible and exhibited little or no aggregation when taken up by cultured rat hippocampal neurons.
Time-domain model of quantum-dot semiconductor optical amplifiers for wideband optical signals.
Puris, D; Schmidt-Langhorst, C; Lüdge, K; Majer, N; Schöll, E; Petermann, K
2012-11-19
We present a novel theoretical time-domain model for a quantum dot semiconductor optical amplifier, that allows to simulate subpicosecond pulse propagation including power-based and phase-based effects. Static results including amplified spontaneous emission spectra, continuous wave amplification, and four-wave mixing experiments in addition to dynamic pump-probe simulations are presented for different injection currents. The model uses digital filters to describe the frequency dependent gain and microscopically calculated carrier-carrier scattering rates for the interband carrier dynamics. It can be used to calculate the propagation of multiple signals with different wavelengths or one wideband signal with high bitrate.
Vitukhnovskii, A. G. Vaschenko, A. A.; Bychkovskii, D. N.; Dirin, D. N.; Tananaev, P. N.; Vakshtein, M. S.; Korzhonov, D. A.
2013-12-15
The results are reported of an experimental study of samples of organic light-emitting diodes (OLEDs) with luminescent layers fabricated on the basis of two types of CdSe/CdS/ZnS semiconductor quantum dots (QDs) with average CdSe core diameters of 3.2 and 4.1 nm and the same overall diameters of 6.5 nm. The dependences of the LED efficiency on the applied voltage are determined. Assumptions are made about ways of optimizing the design of high-efficiency LEDs.
Imaging of free carriers in semiconductors via optical feedback in terahertz quantum cascade lasers
Mezzapesa, F. P. Brambilla, M.; Dabbicco, M.; Scamarcio, G.; Columbo, L. L.; Vitiello, M. S.
2014-01-27
To monitor the density of photo-generated charge carriers on a semiconductor surface, we demonstrate a detectorless imaging system based on the analysis of the optical feedback in terahertz quantum cascade lasers. Photo-excited free electron carriers are created in high resistivity n-type silicon wafers via low power (≅40 mW/cm{sup 2}) continuous wave pump laser in the near infrared spectral range. A spatial light modulator allows to directly reconfigure and control the photo-patterned intensity and the associated free-carrier density distribution. The experimental results are in good agreement with the numerical simulations.
Degree of circular polarization in II-VI diluted magnetic semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Rana, Shivani; Sen, Pratima; Sen, Pranay Kumar
2012-07-01
Degree of circular polarization (DCP) in II-VI diluted magnetic semiconductor quantum dots (QDs) has been studied analytically. Energy levels have been calculated using Luttinger-Kohn Hamiltonian and effective mass approximation. Effects due to application of externa magnetic field have been investigated, followed by calculation of transition dipole moment and DCP. Numerical estimates made for Mn-doped CdSe/ZnSe QDs show that DCP in undoped QDs is negligible while transition metal ion doping yields substantial polarization rotation (≈-2.20%) even at moderate magnetic fields (≈0.5T).
Surfactant-assisted synthesis of water-soluble and biocompatible semiconductor quantum dot-micelles
NASA Astrophysics Data System (ADS)
Fan, Hongyou; Leve, Erik W.; Scullin, Chessa; Tallant, David; Wilson, Michael C.; Brinker, C. J.
2005-04-01
We report a simple and rapid method to synthesize water-soluble and biocompatible fluorescent quantum dot (QD)-micelles by encapsulation of monodisperse, hydrophobic QDs inside surfactant/lipid micelles. Analysis of UV-vis spectra, transmission electron microscopy, and photo luminescence spectra indicate that the water-soluble semiconductor QD-micelles are monodisperse and retain the optical properties of the original hydrophobic QDs. The QD-micelles were shown to be biocompatible and exhibited little or no aggregation when taken up by cultured rat hippocampal neurons.
Effect of quantum parameter – H on space-charge wave spectra in n-type semiconductor plasmas
Ghosh, S. Muley, Apurva
2015-07-31
The present paper deals with the propagation characteristics of very fundamental wave i.e. space – charge wave while propagating through quantum semiconductor plasma. We have used quantum hydrodynamic model to derive the most general dispersion relation in terms of quantum parameter – H. We have found that in presence of an external electrostatic field, the wave spectra (dispersion as well as gain characteristics) not only modified due to presence of quantum effect but also two novel modes of propagation are introduced due to this effect. Hence it may be concluded that to miniaturize the opto-electronic devices, one should use highly doped semiconductor medium at comparatively lower temperature so that the quantum effects predominate.
Disordered Interactions and Fractional Quantum Hall States
NASA Astrophysics Data System (ADS)
Degottardi, Wade; Hafezi, Mohammad
The possibility that topological ordered states may be realized in photonic systems has recently attracted a great deal of attention. Given the rich phenomenology of the fractional quantum Hall effect, the bosonic Laughlin states have been of particular focus in this context. These states are known to arise in strongly nonlinear photonic lattices with artificial gauge fields, where nonlinearities associated with the resonators mimic on-site interactions. These effective interaction strengths are not universal and are subject to spatial disorder. We present a detailed study of the stability of these states and what implications they have for experiments.
Colloquium: Nonlinear collective interactions in quantum plasmas with degenerate electron fluids
Shukla, P. K.; Eliasson, B.
2011-07-01
The current understanding of some important nonlinear collective processes in quantum plasmas with degenerate electrons is presented. After reviewing the basic properties of quantum plasmas, model equations (e.g., the quantum hydrodynamic and effective nonlinear Schroedinger-Poisson equations) are presented that describe collective nonlinear phenomena at nanoscales. The effects of the electron degeneracy arise due to Heisenberg's uncertainty principle and Pauli's exclusion principle for overlapping electron wave functions that result in tunneling of electrons and the electron degeneracy pressure. Since electrons are Fermions (spin-1/2 quantum particles), there also appears an electron spin current and a spin force acting on electrons due to the Bohr magnetization. The quantum effects produce new aspects of electrostatic (ES) and electromagnetic (EM) waves in a quantum plasma that are summarized in here. Furthermore, nonlinear features of ES ion waves and electron plasma oscillations are discussed, as well as the trapping of intense EM waves in quantum electron-density cavities. Specifically, simulation studies of the coupled nonlinear Schroedinger and Poisson equations reveal the formation and dynamics of localized ES structures at nanoscales in a quantum plasma. The effect of an external magnetic field on the plasma wave spectra and develop quantum magnetohydrodynamic equations are also discussed. The results are useful for understanding numerous collective phenomena in quantum plasmas, such as those in compact astrophysical objects (e.g., the cores of white dwarf stars and giant planets), as well as in plasma-assisted nanotechnology (e.g., quantum diodes, quantum free-electron lasers, nanophotonics and nanoplasmonics, metallic nanostructures, thin metal films, semiconductor quantum wells, and quantum dots, etc.), and in the next generation of intense laser-solid density plasma interaction experiments relevant for fast ignition in inertial confinement fusion
Colloquium: Nonlinear collective interactions in quantum plasmas with degenerate electron fluids
NASA Astrophysics Data System (ADS)
Shukla, P. K.; Eliasson, B.
2011-07-01
The current understanding of some important nonlinear collective processes in quantum plasmas with degenerate electrons is presented. After reviewing the basic properties of quantum plasmas, model equations (e.g., the quantum hydrodynamic and effective nonlinear Schrödinger-Poisson equations) are presented that describe collective nonlinear phenomena at nanoscales. The effects of the electron degeneracy arise due to Heisenberg’s uncertainty principle and Pauli’s exclusion principle for overlapping electron wave functions that result in tunneling of electrons and the electron degeneracy pressure. Since electrons are Fermions (spin-1/2 quantum particles), there also appears an electron spin current and a spin force acting on electrons due to the Bohr magnetization. The quantum effects produce new aspects of electrostatic (ES) and electromagnetic (EM) waves in a quantum plasma that are summarized in here. Furthermore, nonlinear features of ES ion waves and electron plasma oscillations are discussed, as well as the trapping of intense EM waves in quantum electron-density cavities. Specifically, simulation studies of the coupled nonlinear Schrödinger and Poisson equations reveal the formation and dynamics of localized ES structures at nanoscales in a quantum plasma. The effect of an external magnetic field on the plasma wave spectra and develop quantum magnetohydrodynamic equations are also discussed. The results are useful for understanding numerous collective phenomena in quantum plasmas, such as those in compact astrophysical objects (e.g., the cores of white dwarf stars and giant planets), as well as in plasma-assisted nanotechnology (e.g., quantum diodes, quantum free-electron lasers, nanophotonics and nanoplasmonics, metallic nanostructures, thin metal films, semiconductor quantum wells, and quantum dots, etc.), and in the next generation of intense laser-solid density plasma interaction experiments relevant for fast ignition in inertial confinement fusion
Huard; Cox; Saminadayar; Arnoult; Tatarenko
2000-01-01
The dependence of the optical absorption spectrum of a semiconductor quantum well on two-dimensional electron concentration n(e) is studied using CdTe samples. The trion peak (X-) seen at low n(e) evolves smoothly into the Fermi edge singularity at high n(e). The exciton peak (X) moves off to high energy, weakens, and disappears. The X,X- splitting is linear in n(e) and closely equal to the Fermi energy plus the trion binding energy. For Cd0.998Mn0.002Te quantum wells in a magnetic field, the X,X- splitting reflects unequal Fermi energies for M = +/-1/2 electrons. The data are explained by Hawrylak's theory of the many-body optical response including spin effects.
2012-01-01
We measured the quantum-confined Stark effect (QCSE) of several types of fluorescent colloidal semiconductor quantum dots and nanorods at the single molecule level at room temperature. These measurements demonstrate the possible utility of these nanoparticles for local electric field (voltage) sensing on the nanoscale. Here we show that charge separation across one (or more) heterostructure interface(s) with type-II band alignment (and the associated induced dipole) is crucial for an enhanced QCSE. To further gain insight into the experimental results, we numerically solved the Schrödinger and Poisson equations under self-consistent field approximation, including dielectric inhomogeneities. Both calculations and experiments suggest that the degree of initial charge separation (and the associated exciton binding energy) determines the magnitude of the QCSE in these structures. PMID:23075136
Quantum spin liquids and the metal-insulator transition in doped semiconductors.
Potter, Andrew C; Barkeshli, Maissam; McGreevy, John; Senthil, T
2012-08-17
We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum spin liquid state with diffusive charge neutral "spinon" excitations. Such a quantum spin liquid state can appear as an intermediate phase between the metal and the Anderson-Mott insulator. An immediate testable consequence is the presence of metallic thermal conductivity at low temperature in the electrical insulator near the metal-insulator transition. Further, we show that though the transition is second order, the zero temperature residual electrical conductivity will jump as the transition is approached from the metallic side. However, the electrical conductivity will have a nonmonotonic temperature dependence that may complicate the extrapolation to zero temperature. Signatures in other experiments and some comparisons with existing data are made. PMID:23006401
Tian, Jianjun; Cao, Guozhong
2015-05-21
Nanostructured metal oxide semiconductors (MOS), such as TiO2 and ZnO, have been regarded as an attractive material for the quantum dots sensitized solar cells (QDSCs), owing to their large specific surface area for loading a large amount of quantum dots (QDs) and strong scattering effect for capturing a sufficient fraction of photons. However, the large surface area of such nanostructures also provides easy pathways for charge recombination, and surface defects and connections between adjacent nanoparticles may retard effective charge injection and charge transport, leading to a loss of power conversion efficiency. Introduction of the surface modification for MOS or QDs has been thought an effective approach to improve the performance of QDSC. In this paper, the recent advances in the control of nanostructures and interfaces in QDSCs and prospects for the further development with higher power conversion efficiency (PCE) have been discussed. PMID:26263261
NASA Astrophysics Data System (ADS)
Singh, Rohan; Suzuki, Takeshi; Autry, Travis M.; Moody, Galan; Siemens, Mark E.; Cundiff, Steven T.
2016-08-01
The exciton coherent signal decay rate in GaAs quantum wells, as measured in four-wave mixing experiments, depends on the polarization of the excitation pulses. Using polarization-dependent two-dimensional coherent spectroscopy, we show that this behavior is due to the bosonic character of excitons. Interference between two different quantum mechanical pathways results in a smaller decay rate for cocircular and colinear polarization of the optical excitation pulses. This interference does not exist for cross-linearly polarized excitation pulses resulting in a larger decay rate. Our result shows that the bosonic nature of excitons must be considered when interpreting ultrafast spectroscopic studies of exciton dephasing in semiconductors. This behavior should be considered while interpreting results of ultrafast spectroscopy experiments involving bosonlike excitations.
Synthesis and size-dependent properties of zinc-blende semiconductor quantum rods.
Kan, Shihai; Mokari, Taleb; Rothenberg, Eli; Banin, Uri
2003-03-01
Dimensionality and size are two factors that govern the properties of semiconductor nanostructures. In nanocrystals, dimensionality is manifested by the control of shape, which presents a key challenge for synthesis. So far, the growth of rod-shaped nanocrystals using a surfactant-controlled growth mode, has been limited to semiconductors with wurtzite crystal structures, such as CdSe (ref. 3). Here, we report on a general method for the growth of soluble nanorods applied to semiconductors with the zinc-blende cubic lattice structure. InAs quantum rods with controlled lengths and diameters were synthesized using the solution-liquid-solid mechanism with gold nanocrystals as catalysts. This provides an unexpected link between two successful strategies for growing high-quality nanomaterials, the vapour-liquid-solid approach for growing nanowires, and the colloidal approach for synthesizing soluble nanocrystals. The rods exhibit both length- and shape-dependent optical properties, manifested in a red-shift of the bandgap with increased length, and in the observation of polarized emission covering the near-infrared spectral range relevant for telecommunications devices. PMID:12612671
Synthesis and size-dependent properties of zinc-blende semiconductor quantum rods
NASA Astrophysics Data System (ADS)
Kan, Shihai; Mokari, Taleb; Rothenberg, Eli; Banin, Uri
2003-03-01
Dimensionality and size are two factors that govern the properties of semiconductor nanostructures. In nanocrystals, dimensionality is manifested by the control of shape, which presents a key challenge for synthesis. So far, the growth of rod-shaped nanocrystals using a surfactant-controlled growth mode, has been limited to semiconductors with wurtzite crystal structures, such as CdSe (ref. 3). Here, we report on a general method for the growth of soluble nanorods applied to semiconductors with the zinc-blende cubic lattice structure. InAs quantum rods with controlled lengths and diameters were synthesized using the solution-liquid-solid mechanism with gold nanocrystals as catalysts. This provides an unexpected link between two successful strategies for growing high-quality nanomaterials, the vapour-liquid-solid approach for growing nanowires, and the colloidal approach for synthesizing soluble nanocrystals. The rods exhibit both length- and shape-dependent optical properties, manifested in a red-shift of the bandgap with increased length, and in the observation of polarized emission covering the near-infrared spectral range relevant for telecommunications devices.
Study of metallothionein-quantum dots interactions.
Tmejova, Katerina; Hynek, David; Kopel, Pavel; Krizkova, Sona; Blazkova, Iva; Trnkova, Libuse; Adam, Vojtech; Kizek, Rene
2014-05-01
Nanoparticles have gained increasing interest in medical and in vivo applications. Metallothionein (MT) is well known as a maintainer of metal ions balance in intracellular space. This is due to high affinity of this protein to any reactive species including metals and reactive oxygen species. The purpose of this study was to determine the metallothionein-quantum dots interactions that were investigated by spectral and electrochemical techniques. CuS, CdS, PbS, and CdTe quantum dots (QDs) were analysed. The highest intensity was shown for CdTe, than for CdS measured by fluorescence. These results were supported by statistical analysis and considered as significant. Further, these interactions were analysed using gel electrophoresis, where MT aggregates forming after interactions with QDs were detected. Using differential pulse voltammetry Brdicka reaction, QDs and MT were studied. This method allowed us to confirm spectral results and, moreover, to observe the changes in MT structure causing new voltammetric peaks called X and Y, which enhanced with the prolonged time of interaction up to 6 h.
Magnetic field induced optical gain in a dilute nitride quaternary semiconductor quantum dot
NASA Astrophysics Data System (ADS)
Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo
2016-10-01
Effects of magnetic field strength on the electronic and optical properties are brought out in a Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot for the applications of desired wavelength in opto-electronic devices. The band alignment is obtained using band anticrossing model and the model solid theory. The magnetic field dependent electron-heavy hole transition energies with the dot radius in a GaInNAs/GaAs quantum dot are investigated. The magnetic field induced oscillator strength as a function of dot radius is studied. The resonant peak values of optical absorption coefficients and the changes of refractive index with the application of magnetic field strength in a GaInNAs/GaAs quantum dot are obtained. The magnetic field induced threshold current density and the maximum optical gain are found in a GaInNAs/GaAs quantum dot. The results show that the optimum wavelength for fibre optical communication networks can be obtained with the variation of applied magnetic field strength and the outcomes may be useful for the design of efficient lasers based on the group III-N-V semiconductors.
Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well
NASA Astrophysics Data System (ADS)
Achermann, Marc; Petruska, Melissa A.; Kos, Simon; Smith, Darryl L.; Koleske, Daniel D.; Klimov, Victor I.
2004-06-01
As a result of quantum-confinement effects, the emission colour of semiconductor nanocrystals can be modified dramatically by simply changing their size. Such spectral tunability, together with large photoluminescence quantum yields and high photostability, make nanocrystals attractive for use in a variety of light-emitting technologies-for example, displays, fluorescence tagging, solid-state lighting and lasers. An important limitation for such applications, however, is the difficulty of achieving electrical pumping, largely due to the presence of an insulating organic capping layer on the nanocrystals. Here, we describe an approach for indirect injection of electron-hole pairs (the electron-hole radiative recombination gives rise to light emission) into nanocrystals by non-contact, non-radiative energy transfer from a proximal quantum well that can in principle be pumped either electrically or optically. Our theoretical and experimental results indicate that this transfer is fast enough to compete with electron-hole recombination in the quantum well, and results in greater than 50 per cent energy-transfer efficiencies in the tested structures. Furthermore, the measured energy-transfer rates are sufficiently large to provide pumping in the stimulated emission regime, indicating the feasibility of nanocrystal-based optical amplifiers and lasers based on this approach.
Spin-orbit interaction in multiple quantum wells
Hao, Ya-Fei
2015-01-07
In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices.
Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
Khaetskii, Alexander V.; Nazarov, Yuli V.
2001-09-15
We have studied spin-flip transitions between Zeeman sublevels in GaAs electron quantum dots. Several different mechanisms which originate from spin-orbit coupling are shown to be responsible for such processes. It is shown that spin-lattice relaxation for the electron localized in a quantum dot is much less effective than for the free electron. The spin-flip rates due to several other mechanisms not related to the spin-orbit interaction are also estimated.
NASA Astrophysics Data System (ADS)
Furis, Madalina; Rawat, Naveen; Cherian, Judy G.; Wetherby, Anthony; Waterman, Rory; McGill, Stephen
2015-09-01
The selective coupling between polarized photons and electronic states in materials enables polarization-resolved spectroscopy studies of exchange interactions, spin dynamics, and collective magnetic behavior of conduction electrons in semiconductors. Here we report on Magnetic Circular Dichroism (MCD) studies of magnetic properties of electrons in crystalline thin films of small molecule organic semiconductors. Specifically, the focus was on the magnetic exchange interaction properties of d-shell ions (Cu2+, Co2+ and Mn2+) metal phthalocyanine (Pc) thin films that one may think of as organic analogues of diluted magnetic semiconductors (DMS). These films were deposited in-house using a recently developed pen-writing method that results in crystalline films with macroscopic long range ordering and improved electronic properties, ideally suited for spectroscopy techniques. Our experiments reveal that, in analogy to DMS, the extended π-orbitals of the Pc molecule mediate the spin exchange between highly localized d-like unpaired spins. We established that exchange mechanisms involve different electronic states in each species and/or hybridization between d-like orbitals and certain delocalized π-orbitals. Unprecedented 25T MCD and PL conducted in the unique 25T Split Florida HELIX magnet at the National High Magnetic Field Laboratory (NHMFL) will prove useful in probing these exchange interactions.
Numerical simulation of nonlinear mode interactions in ridge-waveguide semiconductor lasers
NASA Astrophysics Data System (ADS)
Kalagara, Hemashilpa; Eliseev, Petr G.; Osinski, Marek
2012-02-01
Nonlinear perturbation of effective group index is calculated numerically in semiconductor ridge waveguide laser structures under an influence of a strong driving wave (mode). Model of nonlinear interaction of waves is used to obtain conditions for appearance of anomalous dispersion of modal index and also for inversion of the group index of guided waves (modes of the ridge-waveguide laser structures). Ranges around critically anomalous dispersion (CAD) points, where the effective group index passes zero value, are calculated numerically. CAD points form closed loops in graphs of detuning vs. driving wave intensity. These loops define ranges where superluminal propagation, as well as slowed reflection of probe wave can be obtained. Numerical simulations are performed for an InGaAs/AlGaAs/GaAs double quantum well (DQW) laser structure and also for a GaAs/AlGaAs separate confinement heterostructure. The threshold intensities for the appearance of CAD points, as well as the influence of relaxation rate and optical confinement on the appearance of superluminal regime are compared for the DQW and SCH structures.
Pandey, Sumeet C.; Maroudas, Dimitrios
2011-01-01
We report the findings of a systematic computational study that addresses the effects of surface segregation on the atomic distribution at equilibrium of constituent group-III atoms in freestanding ternary semiconductor In_{x}Ga_{1-x}As nanocrystals. Our analysis is based on density functional theory calculations in conjunction with Monte Carlo simulations of the freestanding nanocrystals using a DFT-re-parameterized valence force field description of interatomic interactions. We have determined the equilibrium concentration profiles as a function of nanocrystal size (d), composition (x), and temperature (T). The ranges of d, x, and T are explored and demonstrate surface segregation and phase separation that leads to different extents of alloying in the nanocrystal core and in the near-surface regions. We find that formation of core/shell-like quantum dots characterized by an In-deficient core and an In-rich shell with a diffuse interface is favored at equilibrium. The analysis elucidates the relationship between the constituent species distribution in the nanocrystal and the parameters that can be tuned experimentally to design synthesis routes for tailoring the properties of ternary quantum dots.
NASA Astrophysics Data System (ADS)
Boda, Aalu; Kumar, D. Sanjeev; Sankar, I. V.; Chatterjee, Ashok
2016-11-01
The problem of a parabolically confined two-dimensional semiconductor GaAs quantum dot with two interacting electrons in the presence of an external magnetic field and the spin-Zeeman interaction is studied using a method of numerical diagonalization. The energy spectrum is calculated as a function of the magnetic field. The magnetic moment (M) and the magnetic susceptibility (χ) show zero temperature diamagnetic peaks due to the exchange induced singlet-triplet transitions. The position and the number of these peaks depend both on the confinement strength of the quantum dot and the strength of the electron-electron interaction (β) .
NASA Astrophysics Data System (ADS)
Chiu, YenTing
This dissertation examines two types of III-V semiconductor quantum well systems: two-dimensional holes in GaAs, and mid-infrared Quantum Cascade lasers. GaAs holes have a much reduced hyperfine interaction with the nuclei due to the p-like orbital, resulting in a longer hole spin coherence time comparing to the electron spin coherence time. Therefore, holes' spins are promising candidates for quantum computing qubits, but the effective mass and the Lande g-factor, whose product determines the spin-susceptibility of holes, are not well known. In this thesis, we measure the effective hole mass through analyzing the temperature dependence of Shubnikov-de Haas oscillations in a relatively strong interacting two-dimensional hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose effective mass we measure to be ˜ 0.2 me. We then apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and the spin susceptibility of the two-dimensional hole system is deduced from the depopulation field. We also confine holes in closely spaced bilayer GaAs quantum wells to study the interlayer tunneling spectrum as a function of interlayer bias and in-plane magnetic field, in hope of probing the hole's Fermi contour. Quantum Cascade lasers are one of the major mid-infrared light sources well suited for applications in health and environmental sensing. One of the important factors that affect Quantum Cascade laser performance is the quality of the interfaces between the epitaxial layers. What has long been neglected is that interface roughness causes intersubband scattering, and thus affecting the relation between the lifetimes of the upper and lower laser states, which determines if population inversion is possible. We first utilize strategically added interface roughness in the laser design to engineer the intersubband scattering lifetimes. We further
Quantum transformation limits in multiwave parametric interactions
NASA Astrophysics Data System (ADS)
Saygin, M. Yu
2016-10-01
The possibility to realize multiple nonlinear optical processes in a single crystal as means to produce multicolor quantum states favours stability and compactness of optical settings. Hence, this approach can be advantageous compared to the traditional one based on cascaded arrangement of optical elements. However, it comes with an obstacle—the class of accessible quantum states is narrower than that of the cascade counterpart. In this letter, we study this task using an example of three coupled nonlinear optical processes, namely, one parametric down-conversion and two of sum-frequency generation. To this end, the singular value decomposition has been applied to find the cascade representation of the compound field evolution. We have found the link between the parameters of the multiwave processes and the relevant cascade parameters—beam-splitting and squeezing parameters, by means of which the generated quantum states have been characterized. The relation between the squeezing parameters that has been found in the course of this work shows that the squeezing resource, produced in the parametric down-conversion, is shared among the modes involved in the compound interactions. Moreover, we have shown that the degree of two-mode entanglement carried by the up-converted frequencies cannot exceed that of the down-converted frequencies.
NASA Astrophysics Data System (ADS)
Thibert, Arthur Joseph, III
Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh
Metal oxide semiconductors for dye- and quantum-dot-sensitized solar cells.
Concina, Isabella; Vomiero, Alberto
2015-04-17
This Review provides a brief summary of the most recent research developments in the synthesis and application of nanostructured metal oxide semiconductors for dye sensitized and quantum dot sensitized solar cells. In these devices, the wide bandgap semiconducting oxide acts as the photoanode, which provides the scaffold for light harvesters (either dye molecules or quantum dots) and electron collection. For this reason, proper tailoring of the optical and electronic properties of the photoanode can significantly boost the functionalities of the operating device. Optimization of the functional properties relies with modulation of the shape and structure of the photoanode, as well as on application of different materials (TiO2, ZnO, SnO2) and/or composite systems, which allow fine tuning of electronic band structure. This aspect is critical because it determines exciton and charge dynamics in the photoelectrochemical system and is strictly connected to the photoconversion efficiency of the solar cell. The different strategies for increasing light harvesting and charge collection, inhibiting charge losses due to recombination phenomena, are reviewed thoroughly, highlighting the benefits of proper photoanode preparation, and its crucial role in the development of high efficiency dye sensitized and quantum dot sensitized solar cells.
Optical characterization of semiconductor microresonaters with self-assembled quantum dots
NASA Astrophysics Data System (ADS)
Chu, Yaya
Micro cavities (MCs) with a small effective volume (V eff ) and a high quality factor (Q) are promising for applications in nonlinear optics, sensing, low-threshold lasers, single photon sources, quantum information processing and cavity quantum electrodynamics (CQED) for individual quantum dots (QDs) in the low temperature emission spectra. Near-field mapping of the emission spectra from embedded self-assembled QD provides a better means to understand and control those applications. This thesis is largely focused on the development of a variety of optically-pumped micro-cavities, including photonic crystals (PCs), microdisks (MDs), and microrings (MRs), utilizing an asymmetric waveguide structure of InAs/AlGaAs or InP/GaInP with ultra-small Veff and high-Q. Good isolation of the waveguide layer from substrate by using a wafer bonding technique with a spin-on-glass or wet oxidation of AlGaAs to produce a stable structure for subsequent device development has been achieved. Both far-field and near-field luminescence have been carried out as a function of temperature, along with near-field imaging and finite-difference-time-domain (FDTD) calculations to study the PC defect and Whispering Gallery Modes (WGMs) inside of the MCs. Optically-pumped lasing of microdisk structures has been investigated in both semiconductor systems. Ultra-low lasing thresholds for InP MD and MR lasers at both room temperature and low temperature are demonstrated for the first time.
Electromagnetic interactions in quantum Hall ferromagnets
Ray, Rashmi
1998-11-10
The {nu}=1 quantum Hall ground state in materials like GaAs is known to be ferromagnetic in nature. The exchange part of the Coulomb interaction provides the required attractive force to align the electronic spins spontaneously. The gapless Goldstone modes are the angular deviations of the magnetization vector from its fixed ground state orientation. Furthermore, the system supports electrically charged spin skyrmion configurations. It has been claimed in the literature that these skyrmions have half-integral spin owing to the presence of a topological Hopf term in the effective action governing the spin excitations. However, it has also been claimed that the derivation leading to this term is somewhat flawed. In this article, we demonstrate the existence of this term unambiguously. Furthermore, we investigate the electromagnetic interactions of the spin excitations and obtain a compact expression for the leading nonminimal electromagnetic coupling of these degrees of freedom.
Quantum spin glass and the dipolar interaction.
Schechter, Moshe; Laflorencie, Nicolas
2006-09-29
Anisotropic dipolar systems are considered. Such systems in an external magnetic field are expected to be a good experimental realization of the transverse field Ising model. With random interactions, this model yields a spin glass to paramagnet phase transition as a function of the transverse field. We show that the off-diagonal dipolar interaction, although effectively reduced, induces a finite correlation length and thus destroys the spin-glass order at any finite transverse field. We thus explain the behavior of the nonlinear susceptibility in the experiments on LiHo(x)Y(1-x)F(4), and argue that a crossover to the paramagnetic phase, and not quantum criticality, is observed.
Time-independent quantum circuits with local interactions
NASA Astrophysics Data System (ADS)
Seifnashri, Sahand; Kianvash, Farzad; Nobakht, Jahangir; Karimipour, Vahid
2016-06-01
Heisenberg spin chains can act as quantum wires transferring quantum states either perfectly or with high fidelity. Gaussian packets of excitations passing through dual rails can encode the two states of a logical qubit, depending on which rail is empty and which rail is carrying the packet. With extra interactions in one or between different chains, one can introduce interaction zones in arrays of such chains, where specific one- or two-qubit gates act on any qubit which passes through these interaction zones. Therefore, universal quantum computation is made possible in a static way where no external control is needed. This scheme will then pave the way for a scalable way of quantum computation where specific hardware can be connected to make large quantum circuits. Our scheme is an improvement of a recent scheme where we borrowed an idea from quantum electrodynamics to replace nonlocal interactions between spin chains with local interactions mediated by an ancillary chain.
NASA Astrophysics Data System (ADS)
Li, Bin; Zhang, Guofeng; Wang, Zao; Li, Zhijie; Chen, Ruiyun; Qin, Chengbing; Gao, Yan; Xiao, Liantuan; Jia, Suotang
2016-09-01
N-type semiconductor indium tin oxide (ITO) nanoparticles are used to effectively suppress the fluorescence blinking of single near-infrared-emitting CdSeTe/ZnS core/shell quantum dots (QDs), where the ITO could block the electron transfer from excited QDs to trap states and facilitate more rapid regeneration of neutral QDs by back electron transfer. The average blinking rate of QDs is significantly reduced by more than an order of magnitude and the largest proportion of on-state is 98%, while the lifetime is not considerably reduced. Furthermore, an external electron transfer model is proposed to analyze the possible effect of radiative, nonradiative, and electron transfer pathways on fluorescence blinking. Theoretical analysis based on the model combined with measured results gives a quantitative insight into the blinking mechanism.
Many-body Effects in a Laterally Inhomogeneous Semiconductor Quantum Well
NASA Technical Reports Server (NTRS)
Ning, Cun-Zheng; Li, Jian-Zhong; Biegel, Bryan A. (Technical Monitor)
2002-01-01
Many body effects on conduction and diffusion of electrons and holes in a semiconductor quantum well are studied using a microscopic theory. The roles played by the screened Hartree-Fock (SHE) terms and the scattering terms are examined. It is found that the electron and hole conductivities depend only on the scattering terms, while the two-component electron-hole diffusion coefficients depend on both the SHE part and the scattering part. We show that, in the limit of the ambipolax diffusion approximation, however, the diffusion coefficients for carrier density and temperature are independent of electron-hole scattering. In particular, we found that the SHE terms lead to a reduction of density-diffusion coefficients and an increase in temperature-diffusion coefficients. Such a reduction or increase is explained in terms of a density-and temperature dependent energy landscape created by the bandgap renormalization.
Manipulating coupling between a single semiconductor quantum dot and single gold nanoparticle
NASA Astrophysics Data System (ADS)
Shafiei, Farbod; Ratchford, Daniel; Kim, Suenne; Li, Xiaoqin; Gray, Stephen
2011-03-01
We report the manipulation of coupling in a simple model system, a single semiconductor quantum dot (QD) near a single metallic nanoparticle, and study the resulting changes in QD photoluminescence (PL) dynamics. We used atomic force microscopy nanomanipulation to controllably push a Au NP proximal to a CdSe/ZnS QD. We observed gradual and reversible changes in the QD PL lifetime and blinking dynamics. In some cases, the total lifetime reduced from 30 ns to well below 1 ns. This decrease is accompanied by the disappearance of blinking behavior as the nonradiative energy transfer from QD to the Au NP becomes the dominant decay channel. In comparison to previous studies, our experiments report changes in the PL dynamics of the same QD, therefore, eliminating the ambiguity of variable properties of individual QDs. Support: NSF, ONR, Welch Foundation, AFOSR, and the Alfred P. Sloan Foundation.
Strongly modified four-wave mixing in a coupled semiconductor quantum dot-metal nanoparticle system
Paspalakis, Emmanuel; Evangelou, Sofia; Kosionis, Spyridon G.; Terzis, Andreas F.
2014-02-28
We study the four-wave mixing effect in a coupled semiconductor quantum dot-spherical metal nanoparticle structure. Depending on the values of the pump field intensity and frequency, we find that there is a critical distance that changes the form of the spectrum. Above this distance, the four-wave mixing spectrum shows an ordinary three-peaked form and the effect of controlling its magnitude by changing the interparticle distance can be obtained. Below this critical distance, the four-wave mixing spectrum becomes single-peaked; and as the interparticle distance decreases, the spectrum is strongly suppressed. The behavior of the system is explained using the effective Rabi frequency that creates plasmonic metaresonances in the hybrid structure. In addition, the behavior of the effective Rabi frequency is explained via an analytical solution of the density matrix equations.
Li, Bin; Zhang, Guofeng; Wang, Zao; Li, Zhijie; Chen, Ruiyun; Qin, Chengbing; Gao, Yan; Xiao, Liantuan; Jia, Suotang
2016-01-01
N-type semiconductor indium tin oxide (ITO) nanoparticles are used to effectively suppress the fluorescence blinking of single near-infrared-emitting CdSeTe/ZnS core/shell quantum dots (QDs), where the ITO could block the electron transfer from excited QDs to trap states and facilitate more rapid regeneration of neutral QDs by back electron transfer. The average blinking rate of QDs is significantly reduced by more than an order of magnitude and the largest proportion of on-state is 98%, while the lifetime is not considerably reduced. Furthermore, an external electron transfer model is proposed to analyze the possible effect of radiative, nonradiative, and electron transfer pathways on fluorescence blinking. Theoretical analysis based on the model combined with measured results gives a quantitative insight into the blinking mechanism. PMID:27605471
Quantum dot-doped porous silicon metal-semiconductor metal photodetector.
Chou, Chia-Man; Cho, Hsing-Tzu; Hsiao, Vincent K S; Yong, Ken-Tye; Law, Wing-Cheung
2012-06-06
In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal-semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1.77 eV) and QDs (approximately 1.91 eV) facilitates the photoinduced electron transfer from QDs to PS whereby enhancing the photoresponsivity. We also showed that the photoresponsitivity of QD/PS hybrid-MSM photodetector depends on the number of layer coatings of QDs and the pore sizes of PS.
Semiconductor quantum dot/albumin complex is a long-life and highly photostable endosome marker.
Hanaki, Ken-ichi; Momo, Asami; Oku, Taisuke; Komoto, Atsushi; Maenosono, Shinya; Yamaguchi, Yukio; Yamamoto, Kenji
2003-03-14
For the purpose of selecting the efficient dispersion condition of hydrophilic semiconductor quantum dots (QDs) in biological buffers, the dispersion of the QDs mixed with a serum albumin from 9 different species or an ovalbumin was compared by a fluorescence intensity analysis. The QDs mixed with sheep serum albumin (SSA) showed the highest fluorescence of all when the mixtures were dissolved in Dulbecco's MEM. QD/SSA complexes were accumulated in the endosome/lysosome of Vero cells and the fluorescence could be detected over a 5-day post-incubation period. The photostability of QD/SSA complexes associated with the endosomes was detectable, at least, 30 times as long as that of fluorescein-labeled dextran involved in endosomes. QD/SSA complex, therefore, can be used as a long-life and highly photostable endosome marker.
Li, Bin; Zhang, Guofeng; Wang, Zao; Li, Zhijie; Chen, Ruiyun; Qin, Chengbing; Gao, Yan; Xiao, Liantuan; Jia, Suotang
2016-01-01
N-type semiconductor indium tin oxide (ITO) nanoparticles are used to effectively suppress the fluorescence blinking of single near-infrared-emitting CdSeTe/ZnS core/shell quantum dots (QDs), where the ITO could block the electron transfer from excited QDs to trap states and facilitate more rapid regeneration of neutral QDs by back electron transfer. The average blinking rate of QDs is significantly reduced by more than an order of magnitude and the largest proportion of on-state is 98%, while the lifetime is not considerably reduced. Furthermore, an external electron transfer model is proposed to analyze the possible effect of radiative, nonradiative, and electron transfer pathways on fluorescence blinking. Theoretical analysis based on the model combined with measured results gives a quantitative insight into the blinking mechanism. PMID:27605471
Quasiparticle parity lifetime of bound states in a hybrid superconductor-semiconductor quantum dot
NASA Astrophysics Data System (ADS)
Higginbotham, Andrew; Albrecht, Sven; Kirsanskas, Gediminas; Chang, Willy; Kuemmeth, Ferdinand; Krogstrup, Peter; Jespersen, Thomas; Nygård, Jesper; Flensberg, Karsten; Marcus, Charles
2015-03-01
We measure quasiparticle transport in an InAs nanowire that is half-covered with epitaxial superconducting aluminum, then locally gated to form a quantum dot. We observe negative differential conductance at finite source-drain bias, and temperature dependent even-odd alternations in the Coulomb blockade peak spacings at zero bias. These observations can be understood in terms of a mid-gap semiconductor discrete state and a continuum of BCS quasiparticle states. Comparing with simple models, we bound the discrete state's parity lifetime and the quasiparticle temperature. These results indicate that parity fluctuations are slow, and imply Majorana qubit poisoning times on the order of a millisecond. Additional results indicate that the bound states move to zero energy in a magnetic field, qualitatively consistent with expectations for Majorana fermions in a finite system. Research supported by Microsoft Station Q, Danish National Research Foundation, Villum Foundation, Lundbeck Foundation, and the European Commission.
Microwave-driven coherent operation of a semiconductor quantum dot charge qubit
Kim, Dohun; Ward, D. R.; Simmons, C. B.; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.
2015-02-16
An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving we achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.
Microwave-driven coherent operation of a semiconductor quantum dot charge qubit
Kim, Dohun; Ward, D. R.; Simmons, C. B.; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; et al
2015-02-16
An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving wemore » achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.« less
Exciton Absorption in Semiconductor Quantum Wells Driven by a Strong Intersubband Pump Field
NASA Technical Reports Server (NTRS)
Liu, Ansheng; Ning, Cun-Zheng
1999-01-01
Optical interband excitonic absorption of semiconductor quantum wells (QW's) driven by a coherent pump field is investigated based on semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW's. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron-hole pairs in the QW structure is low, the pump field induces an Autler-Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron-hole pairs is increased, the split contrast (the ratio between the maximum and minimum values) is decreased because the exciton effect is suppressed at higher densities due to the many-body screening.
Photoelectrochemical Conversion from Graphitic C3N4 Quantum Dot Decorated Semiconductor Nanowires.
An, Tiance; Tang, Jing; Zhang, Yueyu; Quan, Yingzhou; Gong, Xingao; Al-Enizi, Abdullah M; Elzatahry, Ahmed A; Zhang, Lijuan; Zheng, Gengfeng
2016-05-25
Despite the recent progress of developing graphitic carbon nitride (g-C3N4) as a metal-free photocatalyst, the synthesis of nanostructured g-C3N4 has still remained a complicated and time-consuming approach from its bulk powder, which substantially limits its photoelectrochemical (PEC) applications as well as the potential to form composites with other semiconductors. Different from the labor-intensive methods used before, such as exfoliation or assistant templates, herein, we developed a facile method to synthesize graphitic C3N4 quantum dots (g-CNQDs) directly grown on TiO2 nanowire arrays via a one-step quasi-chemical vapor deposition (CVD) process in a homemade system. The as-synthesized g-CNQDs uniformly covered over the surface of TiO2 nanowires and exhibited attractive photoluminescence (PL) properties. In addition, compared to pristine TiO2, the heterojunction of g-CNQD-decorated TiO2 nanowires showed a substantially enhanced PEC photocurrent density of 3.40 mA/cm(2) at 0 V of applied potential vs Ag/AgCl under simulated solar light (300 mW/cm(2)) and excellent stability with ∼82% of the photocurrent retained after over 10 h of continuous testing, attributed to the quantum and sensitization effects of g-CNQDs. Density functional theory calculations were further carried out to illustrate the synergistic effect of TiO2 and g-CNQD. Our method suggests that a variety of g-CNQD-based composites with other semiconductor nanowires can be synthesized for energy applications. PMID:27149607
NASA Astrophysics Data System (ADS)
Lian, Tianquan
Quantum confined semiconductor nanocrystals (0D quantum dots, 1D quantum rods and 2D quantum platlets) have been intensively investigated as light harvesting and charge separation materials for photovoltaic and photocatalytic applications. The efficiency of these semiconductor nanocrystal-based devices depends on many fundamental processes, including light harvesting, carrier relaxation, exciton localization and transport, charge separation and charge recombination. The competition between these processes determines the overall solar energy conversion (solar to electricity or fuel) efficiency. Semiconductor nano-heterostructures, combining two or more material components, offer unique opportunities to control their charge separation properties by tailoring their compositions, dimensions and spatial arrangement. Further integration of catalysts (heterogeneous or homogeneous) to these materials form multifunctional nano-heterostructures. Using 0D, 1D and 2D CdSe/CdS/Pt heterostructures as model systems, we directly probe the above-mentioned fundamental exciton and carrier processes by transient absorption and time-resolved fluorescence spectroscopy. We are examining how to control these fundamental processes through the design of heterostructures to achieve long-lived charge separation and efficient H2 generation. In this talk, we will discuss a new model for exciton dissociation by charge transfer in quantum dots (i.e. Auger assisted electron transfer), mechanism of 1D and 2D exciton transport and dissociation in nanorods, and key factors limiting H2 generation efficiency in CdSe/CdS/Pt nanorod heterostructures.
Sharma, Aartee Yadav, N.; Ghosh, S.
2015-07-31
A detailed study of the quantum modification of acousto-helicon wave spectra due to Bohm potential and Fermi degenerate pressure in colloids laden semiconductor plasma has been presented. We have used quantum hydrodynamic model of plasmas to arrive at most general dispersion relation in presence of magnetic field. This dispersion relation has been analyzed in three different velocity regimes and the expressions for gain constants have been obtained. From the present study it has been concluded that the quantum effect and the magnetic field significantly modify the wave characteristics particularly in high doping regime in semiconductor plasma medium in presence of colloids in it.
Tuning the dynamic exchange interaction in ferromagnet/semiconductor heterostructures
NASA Astrophysics Data System (ADS)
Ou, Yu-Sheng; Chiu, Yi-Hsin; Harmon, N. J.; Odenthal, Patrick; Sheffield, Matthew; Chilcote, Michael; Kawakami, R. K.; Flatté, M. E.; Johnston-Halperin, E.
2015-09-01
We investigate the impact of tunnel barrier thickness on electron spin dynamics in Fe/MgO/GaAs heterostructures using spin-resolved optical pump-probe spectroscopy. Comparison of the Larmor frequency between thick and thin MgO barriers reveals a four-fold variation in exchange coupling strength, and investigation of the inhomogeneous dephasing time, T2*, argues that inhomogeneity in the local effective hyperfine field dominates free-carrier spin relaxation across the entire range of barrier thickness. These results provide additional evidence to support the theory of hyperfine-dominated spin relaxation in GaAs at low temperature and in the presence of an externally applied magnetic field. Further, this work lays the foundation for engineering both the exchange coupling and the free carrier spin dynamics in ferromagnet/semiconductor heterostructures, allowing for the exploration of dissipation and transport in the regime of dynamically-driven spin pumping.
Cho, Edward Namkyu; Shin, Yong Hyeon; Yun, Ilgu
2014-11-07
A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔV{sub TH}{sup QM}) and the gate capacitance (C{sub g}) degradation. First of all, ΔV{sub TH}{sup QM} induced by quantum mechanical (QM) effects is modeled. The C{sub g} degradation is then modeled by introducing the inversion layer centroid. With ΔV{sub TH}{sup QM} and the C{sub g} degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulation results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.
Wu, Yunhu; Zhang, Guoping; Guo, Ling; Qi, Guoqun; Li, Xiaoming
2014-06-14
Based on Auger scattering mechanism, carrier-carrier scattering dynamics between the two-dimensional carrier reservoir (also called wetting layer, i.e., WL) and the confined quantum dot ground and first excited state in quantum-dot semiconductor optical amplifiers (QD-SOAs) are investigated theoretically in this paper. The scattering rates for independent electron and hole densities are calculated. The results show an ultra-fast carrier capture (relaxation) rate up to 1 ps{sup −1}, and there is a complex dependence of the Coulomb scattering rates on the WL electron and hole densities. In addition, due to the different effective mass and the level distribution, the scattering rates for electron and hole are very different. Finally, in order to provide a direction to control (increase or decrease) the input current in realistic QD-SOA systems, a simple method is proposed to determine the trends of the carrier recovery rates with the WL carrier densities in the vicinity of the steady-state.
Fast optical source for quantum key distribution based on semiconductor optical amplifiers.
Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V
2011-02-28
A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.
Fast optical source for quantum key distribution based on semiconductor optical amplifiers.
Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V
2011-02-28
A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication. PMID:21369207
g tensor modulation resonance and single-spin manipulation in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Pingenot, Joseph
2005-03-01
We explore how electric fields can be used to drive single spin resonance in quantum dots without AC magnetic fields. We calculate the g tensor for a single electron in a semiconductor quantum dot as a function of electric field along the growth direction of the dot. The calculations are based on an eight-band envelope-function formalism[1]. The growth-direction g factor is relatively insensitive to this electric field, but for InAs/GaAs dots with transition energies around 1.2 eV the in-plane g factor changes by 20% for an electric field of 150kV/cm. For a DC magnetic field oriented at 45 degrees to the growth direction the spin precession axis for an electron changes by 6 degrees from zero electric field to 150 kV/cm. Thus an AC pseudo-magnetic field almost 10% the size of the DC magnetic field can be generated. This is sufficient to drive g-tensor modulation resonance[2] in the dot and perform single-spin manipulation. 1. C. E. Pryor and M. E. Flatt'e, cond-mat/0410678. 2. Y. Kato, et al., Science 299, 1201 (2003).
NASA Astrophysics Data System (ADS)
Xing, Yun; Numora, Takeo; Chung, Leland; Zhau, Haiyen; Nie, Shuming
2007-02-01
Quantum dots (QDs) are light emitting semi-conductor nanocrystals with novel optical properties including superior photostability, narrow emission spectra with continuous excitation spectra. These properties make QDs especially suitable for multiplexed fluorescent labeling, live cell imaging, and in vivo animal imaging. The multiplexing potential has been recognized but real applications of biological/clinical significance are few. In this study, we used quantum dots to study epithelial mesenchymal transition (EMT), an important process involved in the bone metastasis of prostate cancer. Two prostate cancer cells lines with distinct molecular profiles, representing the two ends of the EMT process, were selected for this study. Four EMT-related biomarkers including E-cadherin, N-cadherin, Vimentin, and RANKL were stained with QD-antibody conjugates with elongation factor 1alpha as the internal control. Morphological information of the QD-stained cells was obtained by digital-color imaging and quantitative information obtained by spectra analysis using a spectrometer. Two types of analysis were performed: abundance of each biomarker in the same cell line relative to the internal control; and the relative abundance of these markers between the two cell lines. Our results demonstrate the feasibility of QDs for multiplexed profiling of FFPE cells/tissue of clinical significance; however, the standardization and quantification still awaits optimization.
Zhou, Ning; Yuan, Meng; Gao, Yuhan; Li, Dongsheng; Yang, Deren
2016-04-26
Strong coupling between semiconductor excitons and localized surface plasmons (LSPs) giving rise to hybridized plexciton states in which energy is coherently and reversibly exchanged between the components is vital, especially in the area of quantum information processing from fundamental and practical points of view. Here, in photoluminescence spectra, rather than from common extinction or reflection measurements, we report on the direct observation of Rabi splitting of approximately 160 meV as an indication of strong coupling between excited states of CdSe/ZnS quantum dots (QDs) and LSP modes of silver nanoshells under nonresonant nanosecond pulsed laser excitation at room temperature. The strong coupling manifests itself as an anticrossing-like behavior of the two newly formed polaritons when tuning the silver nanoshell plasmon energies across the exciton line of the QDs. Further analysis substantiates the essentiality of high pump energy and collective strong coupling of many QDs with the radiative dipole mode of the metallic nanoparticles for the realization of strong coupling. Our finding opens up interesting directions for the investigation of strong coupling between LSPs and excitons from the perspective of radiative recombination under easily accessible experimental conditions. PMID:26972554
Size Dependence of Two-Photon Absorption in Semiconductor Quantum Dots
Dakovski, Georgi L.; Shan, Jie
2013-01-01
Quantum confinement plays an important role in the optical properties of semiconductor quantum dots (QDs). In this work, we combine experiment and modeling to systematically investigate the size dependence of the degenerate two-photon absorption (TPA) of below-band-gap radiation in CdSe QDs. The TPA coefficient β at 800 nm of CdSe QDs of varying radii was measured using femtosecond white-light transient absorption spectroscopy by probing the pump-induced bleaching at the first exciton transition energy. β was also calculated using a model based on the multiband effective-mass approximation. Satisfactory agreement between experiment and theory was obtained. Our findings show the evolution of the TPA in the QDs from that of atom-like to bulk-like with increasing the radius R. The TPA coefficient (or the volume normalized TPA cross-section) increases with radius approximately linearly in the strong confinement regime due to the rapid increase of the joint density of states for the two-photon allowed transitions, and saturates for R > 5 nm (the exciton Bohr radius), approaching that of bulk CdSe.
Quantum Hall effect and semiconductor-to-semimetal transition in biased black phosphorus
NASA Astrophysics Data System (ADS)
Yuan, Shengjun; van Veen, Edo; Katsnelson, Mikhail I.; Roldán, Rafael
2016-06-01
We study the quantum Hall effect of two-dimensional electron gas in black phosphorus in the presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the external magnetic field leads to a quantization of the energy spectrum into equidistant Landau levels, with different cyclotron frequencies for the electron and hole bands. The applied voltage reduces the band gap, and eventually a semiconductor-to-semimetal transition takes place. This nontrivial phase is characterized by the emergence of a pair of Dirac points in the spectrum. As a consequence, the Landau levels are not equidistant anymore but follow the ɛn∝√{n B } characteristic of Dirac crystals as graphene. By using the Kubo-Bastin formula in the context of the kernel polynomial method, we compute the Hall conductivity of the system. We obtain a σx y∝2 n quantization of the Hall conductivity in the gapped phase (standard quantum Hall effect regime) and a σx y∝4 (n +1 /2 ) quantization in the semimetallic phase, characteristic of Dirac systems with nontrivial topology.
Designing Learning Environments to Teach Interactive Quantum Physics
ERIC Educational Resources Information Center
Puente, Sonia M. Gomez; Swagten, Henk J. M.
2012-01-01
This study aims at describing and analysing systematically an interactive learning environment designed to teach Quantum Physics, a second-year physics course. The instructional design of Quantum Physics is a combination of interactive lectures (using audience response systems), tutorials and self-study in unit blocks, carried out with small…
Vitukhnovskii, A. G. Vashchenko, A. A.; Lebedev, V. S.; Vasiliev, R. B.; Brunkov, P. N.; Bychkovskii, D. N.
2013-07-15
The results of an experimental study of organic light-emitting diodes (LEDs) with luminescent layers based on two types of CdSe/CdS semiconductor quantum dots (QDs) with an average CdSe core diameter of 3 and 5 nm and a characteristic CdS shell thickness of 0.5 nm are presented. The dependences of the LED efficiency on the QD concentration are determined. The experimental data are used to determine the mechanism of electronic-excitation transfer from the organic matrix to the semiconductor QDs. Ways of optimizing the design of the LEDs in order to improve their efficiency are suggested on this basis.
Xia, Mingjun; Ghafouri-Shiraz, H
2015-12-10
In this paper, we study the wavelength-dependent amplification in three different wideband quantum well semiconductor optical amplifiers (QWAs) having conventional, exponentially tapered, and linearly tapered active region waveguide structures. A new theoretical model for tapered-waveguide QWAs considering the effect of lateral carrier density distribution and the strain effect in the quantum well is established based on a quantum well transmission line modeling method. The temporal and spectral characteristics of amplified femtosecond pulse are analyzed for each structure. It was found that, for the amplification of a single femtosecond pulse, the tapered-waveguide QWA provides higher saturation gain, and the output spectra of the amplified pulse in all three structures exhibit an apparent redshift and bandwidth narrowing due to the reduction of carrier density; however, the output spectrum in the tapered-waveguide amplifier is less distorted and exhibits smaller bandwidth narrowing. For the simultaneous amplification of two femtosecond pulses with different central frequencies, in all the three structures, two peaks appear in the output spectra while the peak at the frequency closer to the peak frequency of the QWA gain spectrum receives higher amplification due to the frequency (wavelength) dependence of the QWA gain. At a low peak power level of the input pulse, the bandwidth of each window in the tapered structure is larger than that of the conventional waveguide structure, which aggravates the spectrum alias in the amplification of femtosecond pulses with different central frequencies. As the peak powers of the two pulses increase, the spectrum alias in the conventional waveguide becomes more serious while there are small changes in the tapered structures. Also, we have found that in the amplification of a femtosecond pulse train, the linear-tapered QWAs exhibit the fastest gain recovery as compared with the conventional and exponentially tapered QWAs.
Gain and noise properties of InAs/InP quantum dash semiconductor optical amplifiers
NASA Astrophysics Data System (ADS)
Bilenca, A.; Hadass, D.; Alizon, R.; Dery, H.; Mikhelashvili, V.; Eisenstein, G.; Somers, A.; Kaiser, W.; Deubert, S.; Reithmaier, J. P.; Forchel, A.; Calligaro, M.; Bansropun, S.; Krakowski, M.
2005-10-01
Semiconductor optical amplifiers (SOAs) based on nanostructure gain media such as quantum dots (QD) and quantum dashes (QDASH) have several basic characteristics which offer significant performance improvements over commonly used quantum well (QW) or bulk amplifiers. Among these are broadband optical gain bandwidth (which is two to three times broader than that of QW/bulk gain media), fast gain dynamics, large saturation powers, and low α parameter and population inversion factor. Originally, these properties have been demonstrated for QD/QDASH SOAs operating at 1000 nm and 1300 nm. However, it is imperative that QD/QDASH SOAs operating at 1550 nm be materialized in order for them to have the expected impact on fiber-optic communication. Operation at 1550 nm has been achieved using InAs / InP QD and QDASH laser structures. In this paper the unique gain and noise properties of InAs / InP QDASH SOAs operating at 1550 nm will be presented. Specifically, cross-gain-modulation, four-wave-mixing and chirp measurements which explore the complex spectral cross relaxation dynamics of these SOAs will be described and highlighted in the context of simultaneous, distortionless, high bit-rate multiwavelength data amplification, as well as wideband / high-speed optical signal processing applications. Also, an experimental study of the gain and noise in saturated QDASH SOAs will be described together with a theoretical analysis comprising both coherent and incoherent gain phenomena. The impact of the partially inhomogeneously broadened gain spectrum, fast population pulsation dynamics, α parameter and wetting layer density of states on the noise characteristics will be discussed.
Xia, Mingjun; Ghafouri-Shiraz, H
2015-12-10
In this paper, we study the wavelength-dependent amplification in three different wideband quantum well semiconductor optical amplifiers (QWAs) having conventional, exponentially tapered, and linearly tapered active region waveguide structures. A new theoretical model for tapered-waveguide QWAs considering the effect of lateral carrier density distribution and the strain effect in the quantum well is established based on a quantum well transmission line modeling method. The temporal and spectral characteristics of amplified femtosecond pulse are analyzed for each structure. It was found that, for the amplification of a single femtosecond pulse, the tapered-waveguide QWA provides higher saturation gain, and the output spectra of the amplified pulse in all three structures exhibit an apparent redshift and bandwidth narrowing due to the reduction of carrier density; however, the output spectrum in the tapered-waveguide amplifier is less distorted and exhibits smaller bandwidth narrowing. For the simultaneous amplification of two femtosecond pulses with different central frequencies, in all the three structures, two peaks appear in the output spectra while the peak at the frequency closer to the peak frequency of the QWA gain spectrum receives higher amplification due to the frequency (wavelength) dependence of the QWA gain. At a low peak power level of the input pulse, the bandwidth of each window in the tapered structure is larger than that of the conventional waveguide structure, which aggravates the spectrum alias in the amplification of femtosecond pulses with different central frequencies. As the peak powers of the two pulses increase, the spectrum alias in the conventional waveguide becomes more serious while there are small changes in the tapered structures. Also, we have found that in the amplification of a femtosecond pulse train, the linear-tapered QWAs exhibit the fastest gain recovery as compared with the conventional and exponentially tapered QWAs. PMID
NASA Astrophysics Data System (ADS)
Naquin, Clint Alan
Introducing explicit quantum transport into silicon (Si) transistors in a manner compatible with industrial fabrication has proven challenging, yet has the potential to transform the performance horizons of large scale integrated Si devices and circuits. Explicit quantum transport as evidenced by negative differential transconductances (NDTCs) has been observed in a set of quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors fabricated using industrial silicon complementary MOS processing. The QW potential was formed via lateral ion implantation doping on a commercial 45 nm technology node process line, and measurements of the transfer characteristics show NDTCs up to room temperature. Detailed gate length and temperature dependence characteristics of the NDTCs in these devices have been measured. Gate length dependence of NDTCs shows a correlation of the interface channel length with the number of NDTCs formed as well as with the gate voltage (VG) spacing between NDTCs. The VG spacing between multiple NDTCs suggests a quasi-parabolic QW potential profile. The temperature dependence is consistent with partial freeze-out of carrier concentration against a degenerately doped background. A folding amplifier frequency multiplier circuit using a single QW NMOS transistor to generate a folded current-voltage transfer function via a NDTC was demonstrated. Time domain data shows frequency doubling in the kHz range at room temperature, and Fourier analysis confirms that the output is dominated by the second harmonic of the input. De-embedding the circuit response characteristics from parasitic cable and contact impedances suggests that in the absence of parasitics the doubling bandwidth could be as high as 10 GHz in a monolithic integrated circuit, limited by the transresistance magnitude of the QW NMOS. This is the first example of a QW device fabricated by mainstream Si CMOS technology being used in a circuit application and establishes the feasibility
Interaction matrix element fluctuations in quantum dots
Kaplan, L.; Alhassid, Y.
2008-04-04
In the Coulomb blockade regime of a ballistic quantum dot, the distribution of conductance peak spacings is well known to be incorrectly predicted by a single-particle picture; instead, matrix element fluctuations of the residual electronic interaction need to be taken into account. In the normalized random-wave model, valid in the semiclassical limit where the number of electrons in the dot becomes large, we obtain analytic expressions for the fluctuations of two-body and one-body matrix elements. However, these fluctuations may be too small to explain low-temperature experimental data. We have examined matrix element fluctuations in realistic chaotic geometries, and shown that at energies of experimental interest these fluctuations generically exceed by a factor of about 3-4 the predictions of the random wave model. Even larger fluctuations occur in geometries with a mixed chaotic-regular phase space. These results may allow for much better agreement between the Hartree-Fock picture and experiment. Among other findings, we show that the distribution of interaction matrix elements is strongly non-Gaussian in the parameter range of experimental interest, even in the random wave model. We also find that the enhanced fluctuations in realistic geometries cannot be computed using a leading-order semiclassical approach, but may be understood in terms of short-time dynamics.
NASA Astrophysics Data System (ADS)
Tarasenko, S. A.; Burkard, Guido
2016-07-01
The study of electron transport and scattering processes limiting electron mobility in high-quality semiconductor structures is central to solid-state electronics. Here, we uncover an unavoidable source of electron scattering which is caused by fluctuations of nuclear spins. We calculate the momentum relaxation time of electrons in quantum wells governed by the hyperfine interaction between electrons and nuclei and show that this time depends greatly on the spatial correlation of nuclear spins. Moreover, the scattering processes accompanied by a spin flip are a source of the backscattering of Dirac fermions at conducting surfaces of topological insulators.
Atomic-scale detection of magnetic impurity interactions in bulk semiconductors
NASA Astrophysics Data System (ADS)
Geisler, Benjamin; Kratzer, Peter
2015-09-01
We demonstrate on the basis of ab initio simulations how passivated semiconductor surfaces can be exploited to study bulklike interaction properties and wave functions of magnetic impurities on the atomic scale with conventional and spin-polarized scanning tunneling microscopy. By applying our approach to the case of 3 d transition metal impurities close to the H /Si (111 ) surface, we show exemplarily that their wave functions in Si are less extended than for Mn in GaAs, thus obstructing ferromagnetism in Si. Finally, we discuss possible applications of this method to other dilute magnetic semiconductors.
NASA Astrophysics Data System (ADS)
Mirzanian, S. M.; Shokri, A. A.; Mikaili Agah, K.; Elahi, S. M.
2015-09-01
We investigate theoretically the effects of Dresselhaus spin-orbit coupling (DSOC) on the spin-dependent current and shot noise through II-VI diluted magnetic semiconductor/nonmagnetic semiconductor (DMS/NMS) barrier structures. The calculation of transmission probability is based on an effective mass quantum-mechanical approach in the presence of an external magnetic field applied along the growth direction of the junction and also applied voltage. We also study the dependence of spin-dependent properties on external magnetic field and relative angle between the magnetizations of two DMS layers in CdTe/CdMnTe heterostructures by including the DSOC effect. The results show that the DSOC has great different influence on transport properties of electrons with spin up and spin down in the considered system and this aspect may be utilized in designing new spintronics devices.
PREFACE: Singular interactions in quantum mechanics: solvable models
NASA Astrophysics Data System (ADS)
Dell'Antonio, Gianfausto; Exner, Pavel; Geyler, Vladimir
2005-06-01
editors study a toy model of a decay under the influence of a time-periodic δ potential. E Demiralp describes the spectrum of a spherical harmonic oscillator amended with a concentric family of δ-shell interactions. Another of the editors presents an isoperimetric problem for point interactions arranged at vertices of a polygon. W Huddell and R Hughes show how singular perturbations of a one-dimensional Dirac operator can be approximated by regular potentials, and J Brasche constructs a family of Hamiltonians in which the singular interaction has a more complicated support, namely a Brownian path. Finally, B Pavlov and I Antoniou apply the singular perturbation technique to another classical Hamiltonian, that of a generalized Friedrichs model; no matter that the unperturbed observable is called momentum in their paper. The three papers in the following group are distinguished by the fact that they consider systems which are fully or partially periodic. F Bentosela and M Tater analyse scattering on a crystalline `slab' modelled by point interactions distributed periodically on a finite number of parallel plates. E de Prunelé studies evolution of wavepackets in crystal models of different geometries, and M Avdonin et al discuss a simple model of a spin-dependent scattering on a one-dimensional array of quantum dots. The next group of papers is devoted to a topic which was untouched at the time of the aforementioned first edition, namely quantum graphs, which became a subject of interest after numerous applications of such systems to semiconductor, carbon and other nanostructures. Most contributions here deal with the `usual' model in which the Hamiltonian is a Schrödinger operator supported by the graph. P Kuchment describes spectral properties of such graphs, in particular periodic ones and those with decorations. S Albeverio and K Pankrashkin present a modification of Krein's formula which is suitable for constructing Hamiltonians of quantum graphs using boundary
Nozik, Arthur J.; Beard, Matthew C.; Luther, Joseph M.; Law, Matt; Ellingson, Randy J.; Johnson, Justin C.
2010-10-14
Here, we will first briefly summarize the general principles of QD synthesis using our previous work on InP as an example. Then we will focus on QDs of the IV-VI Pb chalcogenides (PbSe, PbS, and PbTe) and Si QDs because these were among the first QDs that were reported to produce multiple excitons upon absorbing single photons of appropriate energy (a process we call multiple exciton generation (MEG)). We note that in addition to Si and the Pb-VI QDs, two other semiconductor systems (III-V InP QDs(56) and II-VI core-shell CdTe/CdSe QDs(57)) were very recently reported to also produce MEG. Then we will discuss photogenerated carrier dynamics in QDs, including the issues and controversies related to the cooling of hot carriers and the magnitude and significance of MEG in QDs. Finally, we will discuss applications of QDs and QD arrays in novel quantum dot PV cells, where multiple exciton generation from single photons could yield significantly higher PV conversion efficiencies.
NASA Astrophysics Data System (ADS)
Janssen, Griet
In this work, high frequency (W-band, 95 GHz) Electron Paramagnetic Resonance spectroscopy (EPR) and Optically Detected Magnetic Resonance (ODMR) have been used as the principal tools to investigate quantum confined structures and defects in crystalline semiconductors. The low dimensional structures discussed in this work could be successfully examined with magnetic resonance techniques thanks to the high sensitivity of ODMR in combination with the application of high microwave frequencies. The advantage of the latter, compared to more conventional frequencies, is the increased Zeeman resolution, the improved sensitivity and the relaxation of the life time requirements. Our W-band setup was extended with a fiber bundle accessory to allow optical excitation of and light collection from a sample in the standard cylindrical cavity of a W-band spectrometer. This optical fiber bundle approach was shown to be efficient for ODMR experiments, even at low laser excitation powers. Microwave resonance transitions have been observed in a thin In(Ga)As/GaAs layer with shallowly formed quantum dots. The optical detection technique, combined with the application of high microwave frequencies and a long exciton lifetime, allowed for the first observation of microwave resonances in semiconductor quantum dots grown with epitaxial techniques. The microwave resonances revealed the cyclotron resonance of the electrons in the two-dimensional wetting layer, corresponding to an effective mass of 0.053m0. Further magnetic resonance transitions between spin states of the holes confined in the shallow dots were observed and an inhomogeneity in the quantum dot plane, either in the shape of or in the strain on the shallow quantum dots was derived. The W-band ODMR study of AgCl nanocrystals embedded in a crystalline KCl matrix, which was combined with atomic force microscopy (AFM) and continuous-wave and time-resolved photoluminescence measurements, revealed the high complexity of this system
NASA Astrophysics Data System (ADS)
Osborne, M. A.; Fisher, A. A. E.
2016-07-01
Correction for `Charge-tunnelling and self-trapping: common origins for blinking, grey-state emission and photoluminescence enhancement in semiconductor quantum dots' by M. A. Osborne, et al., Nanoscale, 2016, 8, 9272-9283.
Sharing of classical and quantum correlations via XY interaction
Wang, Jieci; Silva, Jaime; Lanceros-Mendez, Senentxu
2014-09-15
The sharing of classical and quantum correlations via XY interaction is investigated. The model includes two identical networks consisting of n nodes, the ith node of one network sharing a correlated state with the jth node of the other network, while all other nodes are initially unconnected. It is shown that classical correlation, quantum discord as well as entanglement can be shared between any two nodes of the network via XY interaction and that quantum information can be transferred effectively between them. It is found that there is no simple dominating relation between the quantum correlation and entanglement in inertial system.
Tsuchiya, Takuma
2013-12-04
We have investigated the possibility that the coherence length of spatially oscillating electron-spin polarization is improved in dilute magnetic semiconductors. In usual nonmagnetic quantum wells, the spin polarization of the electrons injected from a ferromagnetic source electrode oscillates spatially because of the spin precession due to spin-orbit effective magnetic fields, i.e., the Rashba and Dresselhaus fields. However, the polarization is damped within an oscillation period by the D’yakonov-Perel’ spin relaxation. In paramagnetic dilute magnetic semiconductors, impurity spin polarization is induced under the electron-spin polarization, and this impurity polarization influences the electron-spin precession and possibly improves the spatial electron-spin coherence. The validity of this effect is demonstrated by a numerical simulation for a CdMnTe quantum well.
Sokolova, Z N; Tarasov, I S; Asryan, L V
2014-09-30
Using an extended theoretical model, which includes the rate equations for both electrons and holes, we have studied the output characteristics of semiconductor quantum-well lasers. We have found non-trivial dependences of electron and hole concentrations in the waveguide region of the laser on the capture velocities of both types of carriers from the waveguide region into the quantum well. We have obtained the dependences of the internal differential quantum efficiency and optical output power of the laser on the capture velocities of electrons and holes. An increase in the capture velocities has been shown to result in suppression of parasitic recombination in the waveguide region and therefore in a substantial increase in the quantum efficiency and output power. (lasers)
Karni, O. Mikhelashvili, V.; Eisenstein, G.; Kuchar, K. J.; Capua, A.; Sęk, G.; Misiewicz, J.; Ivanov, V.; Reithmaier, J. P.
2014-03-24
We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.
NASA Astrophysics Data System (ADS)
Nasehi, R.
2016-07-01
A scheme for switching of the optical bistability (OB) and multi-stability (OM) in a dielectric slab doped with a three-level ladder-configuration n-doped semiconductor quantum well is simulated. It is shown that the bistable behavior of the system in dielectric slab can be controlled via amplitude or relative phase of applied fields. This optical system may provide some new possibilities for test the switching process.
Jarlov, C; Wodey, É; Lyasota, A; Calic, M; Gallo, P; Dwir, B; Rudra, A; Kapon, E
2016-08-12
Using site-controlled semiconductor quantum dots (QDs) free of multiexcitonic continuum states, integrated with photonic crystal membrane cavities, we clarify the effects of pure dephasing and phonon scattering on exciton-cavity coupling in the weak-coupling regime. In particular, the observed QD-cavity copolarization and cavity mode feeding versus QD-cavity detuning are explained quantitatively by a model of a two-level system embedded in a solid-state environment. PMID:27563983
NASA Astrophysics Data System (ADS)
Jarlov, C.; Wodey, É.; Lyasota, A.; Calic, M.; Gallo, P.; Dwir, B.; Rudra, A.; Kapon, E.
2016-08-01
Using site-controlled semiconductor quantum dots (QDs) free of multiexcitonic continuum states, integrated with photonic crystal membrane cavities, we clarify the effects of pure dephasing and phonon scattering on exciton-cavity coupling in the weak-coupling regime. In particular, the observed QD-cavity copolarization and cavity mode feeding versus QD-cavity detuning are explained quantitatively by a model of a two-level system embedded in a solid-state environment.
NASA Astrophysics Data System (ADS)
Yang, Shuyu; Zhang, Yi; Li, Qi; Zhu, Xiaoliang; Bergman, Keren; Magill, Peter; Baehr-Jones, Thomas; Hochberg, Michael
2015-02-01
We report a hybrid integrated external cavity laser by butt coupling a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip. The device lasers at 1302 nm in the O-band, a wavelength regime critical to data communication systems. We measured 18 mW on-chip output power and over 50-dB side-mode suppression ratio. We also demonstrated open eye diagrams at 10 and 40 Gb/s.
Nonperturbative THz nonlinearities for many-body quantum control in semiconductors
NASA Astrophysics Data System (ADS)
Lange, C.; Maag, T.; Bayer, A.; Hohenleutner, M.; Baierl, S.; Bougeard, D.; Mootz, M.; Koch, S. W.; Kira, M.; Huber, R.
2016-03-01
Quantum computing and ultrafast quantum electronics constitute pivotal technologies of the 21st century and revolutionize the way we process information. Successful implementations require controlling superpositions of states and coherence in matter, and exploit nonlinear effects for elementary logic operations. In the THz frequency range between optics and electronics, solid state systems offer a rich spectrum of collective excitations such as excitons, phonons, magnons, or Landau electrons. Here, single-cycle THz transients of 8.7 kV/cm amplitude centered at 1 THz strongly excite inter-Landau-level transitions of magnetically biased GaAs quantum wells, facilitating coherent Landau ladder climbing by more than six rungs, population inversion, and coherent polarization control. Strong, highly nonlinear pump-probe and four- and six-wave mixing signals, entirely unexpected for this paragon of the harmonic oscillator, are revealed through two-time THz spectroscopy. In this scenario of nonperturbative polarization dynamics, our microscopic theory shows how the protective limits of Kohn's theorem are ultimately surpassed by dynamically enhanced Coulomb interactions, opening the door to exploiting many-body dynamics for nonlinear quantum control.
Holonomic quantum computation on microwave photons with all resonant interactions
NASA Astrophysics Data System (ADS)
Dong, Ping; Yu, Long-Bao; Zhou, Jian
2016-08-01
The intrinsic difficulties of holonomic quantum computation on superconducting circuits are originated from the use of three levels in superconducting transmon qubits and the complicated dispersive interaction between them. Due to the limited anharmonicity of transmon qubits, the experimental realization seems to be very challenging. However, with recent experimental progress, coherent control over microwave photons in superconducting circuit cavities is well achieved, and thus provides a promising platform for quantum information processing with photonic qubits. Here, with all resonant inter-cavity photon-photon interactions, we propose a scheme for implementing scalable holonomic quantum computation on a circuit QED lattice. In our proposal, three cavities, connected by a SQUID, are used to encode a logical qubit. By tuning the inter-cavity photon-photon interaction, we can construct all the holonomies needed for universal quantum computation in a non-adiabatic way. Therefore, our scheme presents a promising alternative for robust quantum computation with microwave photons.
Holonomic quantum computation on microwave photons with all resonant interactions
NASA Astrophysics Data System (ADS)
Dong, Ping; Yu, Long-Bao; Zhou, Jian
2016-08-01
The intrinsic difficulties of holonomic quantum computation on superconducting circuits are originated from the use of three levels in superconducting transmon qubits and the complicated dispersive interaction between them. Due to the limited anharmonicity of transmon qubits, the experimental realization seems to be very challenging. However, with recent experimental progress, coherent control over microwave photons in superconducting circuit cavities is well achieved, and thus provides a promising platform for quantum information processing with photonic qubits. Here, with all resonant inter-cavity photon–photon interactions, we propose a scheme for implementing scalable holonomic quantum computation on a circuit QED lattice. In our proposal, three cavities, connected by a SQUID, are used to encode a logical qubit. By tuning the inter-cavity photon–photon interaction, we can construct all the holonomies needed for universal quantum computation in a non-adiabatic way. Therefore, our scheme presents a promising alternative for robust quantum computation with microwave photons.
Kondryuk, D V; Derevyanchuk, A V; Kramar, V M
2016-04-20
The results of theoretical study of the temperature dependence of a long-wave range fundamental absorption edge in flat nanoheterostructures with a single quantum well (nanofilms) are adduced. The quantum well is assumed to be rectangular, of finite depth, and with unstrained heterojunctions as the nanofilm surface. Energies of electrons, holes, and excitons have been calculated within the framework of the effective mass model using the Green functions techniques, with account of their interaction with polar optical phonons confined within a quantum well. Numerical calculations are performed for nanofilms β-CdS/β-HgS/β-CdS and Al_{0.3}Ga_{0.7}As/GaAs/Al_{0.3}Ga_{0.7}As. It is shown that interaction with optical phonons causes a long-wave shift of the threshold frequency of the fundamental absorption band and a shift of exciton peaks by hundreds of Å for the first mentioned nanofilm and by dozens of Å for the second one, which is characterized by lower magnitudes of the constants of the electron-phonon coupling. The shift magnitude, as well as the height and half-width of the exciton absorption band, changes when the temperature exceeds 80 and 100 K, respectively.
PREFACE: Singular interactions in quantum mechanics: solvable models
NASA Astrophysics Data System (ADS)
Dell'Antonio, Gianfausto; Exner, Pavel; Geyler, Vladimir
2005-06-01
editors study a toy model of a decay under the influence of a time-periodic δ potential. E Demiralp describes the spectrum of a spherical harmonic oscillator amended with a concentric family of δ-shell interactions. Another of the editors presents an isoperimetric problem for point interactions arranged at vertices of a polygon. W Huddell and R Hughes show how singular perturbations of a one-dimensional Dirac operator can be approximated by regular potentials, and J Brasche constructs a family of Hamiltonians in which the singular interaction has a more complicated support, namely a Brownian path. Finally, B Pavlov and I Antoniou apply the singular perturbation technique to another classical Hamiltonian, that of a generalized Friedrichs model; no matter that the unperturbed observable is called momentum in their paper. The three papers in the following group are distinguished by the fact that they consider systems which are fully or partially periodic. F Bentosela and M Tater analyse scattering on a crystalline `slab' modelled by point interactions distributed periodically on a finite number of parallel plates. E de Prunelé studies evolution of wavepackets in crystal models of different geometries, and M Avdonin et al discuss a simple model of a spin-dependent scattering on a one-dimensional array of quantum dots. The next group of papers is devoted to a topic which was untouched at the time of the aforementioned first edition, namely quantum graphs, which became a subject of interest after numerous applications of such systems to semiconductor, carbon and other nanostructures. Most contributions here deal with the `usual' model in which the Hamiltonian is a Schrödinger operator supported by the graph. P Kuchment describes spectral properties of such graphs, in particular periodic ones and those with decorations. S Albeverio and K Pankrashkin present a modification of Krein's formula which is suitable for constructing Hamiltonians of quantum graphs using boundary
Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures
NASA Astrophysics Data System (ADS)
Miao, K.; Sadasivam, S.; Charles, J.; Klimeck, G.; Fisher, T. S.; Kubis, T.
2016-03-01
Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method is known to serve this purpose well but is numerically expensive in simulating incoherent scattering processes. This work extends the efficient Büttiker probe approach widely used in electron transport to phonons and considers salient implications of the method. Different scattering mechanisms such as impurity, boundary, and Umklapp scattering are included, and the method is shown to reproduce the experimental thermal conductivity of bulk Si and Ge over a wide temperature range. Temperature jumps at the lead/device interface are captured in the quasi-ballistic transport regime consistent with results from the Boltzmann transport equation. Results of this method in Si/Ge heterojunctions illustrate the impact of atomic relaxation on the thermal interface conductance and the importance of inelastic scattering to activate high-energy channels for phonon transport. The resultant phonon transport model is capable of predicting the thermal performance in the heterostructure efficiently.
NASA Astrophysics Data System (ADS)
Wu, Peng; Hou, Xiandeng; Xu, Jing-Juan; Chen, Hong-Yuan
2016-04-01
Ratiometric fluorescent sensors, which can provide built-in self-calibration for correction of a variety of analyte-independent factors, have attracted particular attention for analytical sensing and optical imaging with the potential to provide a precise and quantitative analysis. A wide variety of ratiometric sensing probes using small fluorescent molecules have been developed. Compared with organic dyes, exploiting semiconductor quantum dots (QDs) in ratiometric fluorescence sensing is even more intriguing, owing to their unique optical and photophysical properties that offer significant advantages over organic dyes. In this review, the main photophysical mechanism for generating dual-emission from QDs for ratiometry is discussed and categorized in detail. Typically, dual-emission can be obtained either with energy transfer from QDs to dyes or with independent dual fluorophores of QDs and dye/QDs. The recent discovery of intrinsic dual-emission from Mn-doped QDs offers new opportunities for ratiometric sensing. Particularly, the signal transduction of QDs is not restricted to fluorescence, and electrochemiluminescence and photoelectrochemistry from QDs are also promising for sensing, which can be made ratiometric for correction of interferences typically encountered in electrochemistry. All these unique photophysical properties of QDs lead to a new avenue of ratiometry, and the recent progress in this area is addressed and summarized here. Several interesting applications of QD-based ratiometry are presented for the determination of metal ions, temperature, and biomolecules, with specific emphasis on the design principles and photophysical mechanisms of these probes.
Examining Forster Energy Transfer for Semiconductor Nanocrystaline Quantum Dot Donors and Acceptors
Curutchet, C.; Franceschetti, A.; Zunger, A.; Scholes, G. D.
2008-01-01
Excitation energy transfer involving semiconductor quantum dots (QDs) has received increased attention in recent years because their properties, such as high photostability and size-tunable optical properties, have made QDs attractive as Forster resonant energy transfer (FRET) probes or sensors. An intriguing question in FRET studies involving QDs has been whether the dipole approximation, commonly used to predict the electronic coupling, is sufficiently accurate. Accurate estimates of electronic couplings between two 3.9 nm CdSe QDs and between a QD and a chlorophyll molecule are reported. These calculations are based on transition densities obtained from atomistic semiempirical calculations and time-dependent density functional theory for the QD and the chlorophyll, respectively. In contrast to the case of donor-acceptor molecules, where the dipole approximation breaks down at length scales comparable to the molecular dimensions, we find that the dipole approximation works surprisingly well when donor and/or acceptor is a spherical QD, even at contact donor-acceptor separations. Our conclusions provide support for the use of QDs as FRET probes for accurate distance measurements.
Electron g factor anisotropy in asymmetric III-V semiconductor quantum wells
NASA Astrophysics Data System (ADS)
Toloza Sandoval, M. A.; Silva, E. A. de Andrada e.; Ferreira da Silva, A.; La Rocca, G. C.
2016-11-01
The electron effective g factor tensor in asymmetric III-V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the 8× 8 {k}\\cdot {p} Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors {g}\\perp * and {g}\\parallel * , for the magnetic field in the QW plane and along the growth direction, are obtained analytically as a function of the well width L. The effects of the structure inversion asymmetry (SIA) on the electron g factor are analyzed. For the g-factor main anisotropy {{Δ }}g={g}\\perp * -{g}\\parallel * in AQWs, a sign change is predicted in the narrow well limit due to SIA, which can explain recent measurements and be useful in spintronic applications. Specific results for narrow-gap {{AlSb}}/{{InAs}}/{{GaSb}} and {{{Al}}}x{{{Ga}}}1-x{{As}}/{{GaAs}}/{{{Al}}}y{{{Ga}}}1-y{{As}} AQWs are presented and discussed with the available experimental data; in particular InAs QWs are shown to not only present much larger g factors but also a larger g-factor anisotropy, and with the opposite sign with respect to GaAs QWs.
Construction of Two Color Semiconductor Quantum Dots Wire by utilizing the complementarity of DNA
NASA Astrophysics Data System (ADS)
Tanaka, Shin-ichi; Miyata, Tomoko; Kato, Takayuki; Namba, Keiichi; Yanagida, Toshio; Sako, Yasushi; Kawata, Satoshi; Inouye, Yasushi
2008-10-01
Nano-particles possess size-tunable optical, electrical and magnetic properties. Especially, semiconductor nano-particle (Quantum dot (Q-dot)) can be used for multi-color biological imaging as well as for the construction of multi-functional biosensors and molecular devices. Arrangement of nano-particles at the molecular level is of crucial importance to realize multi-functional biosensors or molecular devices. Here we report a method for DNA-directed arrangement of Q-dot. A template DNA more than 1,000 bases in length with a repeat unit of 100 bases was synthesized by enzymatic reactions. Alternating Q-dots alignment was fabricated by using complementary binding between the template DNA and short fragments of DNA with two different sequences. Each of them was modified with two different colors of Q-dots by the avidin-biotin reaction and a reaction between an amino group and a sulfo-NHS group, respectively. Alignment of Q-dots on the template DNA was assessed by fluorescence microscopy, atomic force microscopy (AFM) and transmission electron microscopy (TEM). In AFM and TEM images, we have successfully observed Q-dots alignment on the template DNA. These results provide a good starting point to the fabrication of two-color Q-dot wire on the template DNA.
Strain-induced vertical self-organization of semiconductor quantum dots: A computational study
Shtinkov, N.
2013-12-28
Atomistic strain simulations based on the valence force field method are employed to study the vertical arrangements of semiconductor quantum dot (QD) multilayers. The effects of the QD shape, dimensions, and materials parameters are systematically investigated, varying independently the following parameters: spacer width H, QD lateral spacing D, base b, and height h, slope of the side facets, elastic properties of the dot and the substrate materials, and lattice mismatch between the dot and the substrate. The transition between vertically aligned and anti-aligned structures is found to be determined mainly by the ratios H/D and b/D, as well as by the strain anisotropy of the substrate and to a lesser extent of the QD. The dependence on the QD height h is significant only for steep side facets and large aspect ratios h/b, and the effects of the lattice mismatch strain and the bulk elastic moduli are found to be negligible. The comparison with experimental data shows an excellent agreement with the results from the simulations, demonstrating that the presented analysis results in precise theoretical predictions for the vertical self-organization regime in a wide range of QD materials systems.
Burghardt, I.; Tamura, H.; Bittner, E. R.
2009-03-09
This contribution gives an overview of our recent study of phonon-driven exciton dissociation at semiconductor polymer heterojunctions, using a quantum dynamical analysis based on a linear vibronic coupling model parametrized for three electronic states and 20-30 phonon modes. The decay of the photogenerated exciton towards an interfacial charge transfer state is an ultrafast (femtosecond to picosecond scale) process which initiates the photocurrent generation. We consider several representative interface configurations, which are shown to exhibit an efficient exciton dissociation. The process depends critically on the presence of intermediate states, and on the dynamical interplay between high-frequency (C=C stretch) and low-frequency (ring-torsional) modes. The dynamical mechanism is interpreted in terms of a hierarchical electron-phonon model which allows one to identify generalized reaction coordinates for the nonadiabatic process. This analysis highlights that the electron-phonon coupling is dominated by the high-frequency modes, but the low-frequency modes are crucial in mediating the transition to a charge-separated state. The ultra-fast, highly nonequilibrium dynamics is in accordance with spectroscopic observations.
NASA Astrophysics Data System (ADS)
Burghardt, I.; Bittner, E. R.; Tamura, H.
2009-03-01
This contribution gives an overview of our recent study of phonon-driven exciton dissociation at semiconductor polymer heterojunctions, using a quantum dynamical analysis based on a linear vibronic coupling model parametrized for three electronic states and 20-30 phonon modes. The decay of the photogenerated exciton towards an interfacial charge transfer state is an ultrafast (femtosecond to picosecond scale) process which initiates the photocurrent generation. We consider several representative interface configurations, which are shown to exhibit an efficient exciton dissociation. The process depends critically on the presence of intermediate states, and on the dynamical interplay between high-frequency (C=C stretch) and low-frequency (ring-torsional) modes. The dynamical mechanism is interpreted in terms of a hierarchical electron-phonon model which allows one to identify generalized reaction coordinates for the nonadiabatic process. This analysis highlights that the electron-phonon coupling is dominated by the high-frequency modes, but the low-frequency modes are crucial in mediating the transition to a charge-separated state. The ultra-fast, highly nonequilibrium dynamics is in accordance with spectroscopic observations.
Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact
Wójcik, P. Adamowski, J. Wołoszyn, M.; Spisak, B. J.
2015-07-07
We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics.
Bio serves nano: biological light-harvesting complex as energy donor for semiconductor quantum dots.
Werwie, Mara; Xu, Xiangxing; Haase, Mathias; Basché, Thomas; Paulsen, Harald
2012-04-01
Light-harvesting complex (LHCII) of the photosynthetic apparatus in plants is attached to type-II core-shell CdTe/CdSe/ZnS nanocrystals (quantum dots, QD) exhibiting an absorption band at 710 nm and carrying a dihydrolipoic acid coating for water solubility. LHCII stays functional upon binding to the QD surface and enhances the light utilization of the QDs significantly, similar to its light-harvesting function in photosynthesis. Electronic excitation energy transfer of about 50% efficiency is shown by donor (LHCII) fluorescence quenching as well as sensitized acceptor (QD) emission and corroborated by time-resolved fluorescence measurements. The energy transfer efficiency is commensurable with the expected efficiency calculated according to Förster theory on the basis of the estimated donor-acceptor separation. Light harvesting is particularly efficient in the red spectral domain where QD absorption is relatively low. Excitation over the entire visible spectrum is further improved by complementing the biological pigments in LHCII with a dye attached to the apoprotein; the dye has been chosen to absorb in the "green gap" of the LHCII absorption spectrum and transfers its excitation energy ultimately to QD. This is the first report of a biological light-harvesting complex serving an inorganic semiconductor nanocrystal. Due to the charge separation between the core and the shell in type-II QDs the presented LHCII-QD hybrid complexes are potentially interesting for sensitized charge-transfer and photovoltaic applications.
NASA Astrophysics Data System (ADS)
Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya
2015-04-01
A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.
Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact
NASA Astrophysics Data System (ADS)
Wójcik, P.; Adamowski, J.; Wołoszyn, M.; Spisak, B. J.
2015-07-01
We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics.
Magnetic Interactions in the Diluted Magnetic Semiconductor Mn_xGe_1-x
NASA Astrophysics Data System (ADS)
Erwin, Steven C.; Hellberg, C. Stephen
2001-03-01
Much current debate has focused on the origins of ferromagnetism in III-V magnetic semiconductors. Less attention has been paid to magnetically doped Group-IV semiconductors, although they have been predicted to have Curie temperatures of the same order [1]. We use density-functional theoretical (DFT) methods to study the electronic structure and magnetic interactions in Mn_xGe_1-x, the first such elemental magnetic semiconductor to be realized experimentally [2]. We use ordered supercells to simulate 6% Mn concentration, and calculate total energies within DFT for a variety of positional and magnetic arrangements of Mn at fixed concentration. We then fit these energies to a Heisenberg model to extract the spin coupling constants. The result is a strong but very short-ranged antiferromagnetic interaction between Mn atoms, and a weaker but longer-ranged ferromagnetic interaction. The ferromagnetic interaction dominates at all Mn-Mn distances beyond nearest neighbor. [1] T. Dietl et al., Science 287, 1019 (2000). [2] Y.D. Park, J. Mattson, A. Hanbicki, and B. Jonker (unpublished).
Integrability and Quantum Phase Transitions in Interacting Boson Models
NASA Astrophysics Data System (ADS)
Dukelsky, J.; Arias, J. M.; Garcia-Ramos, J. E.; Pittel, S.
2004-04-01
The exact solution of the boson pairing hamiltonian given by Richardson in the sixties is used to study the phenomena of level crossings and quantum phase transitions in the integrable regions of the sd and sdg interacting boson models.
Interaction of solitons with a string of coupled quantum dots
NASA Astrophysics Data System (ADS)
Kumar, Vijendra; Swami, O. P.; Taneja, S.; Nagar, A. K.
2016-05-01
In this paper, we develop a theory for discrete solitons interaction with a string of coupled quantum dots in view of the local field effects. Discrete nonlinear Schrodinger (DNLS) equations are used to describe the dynamics of the string. Numerical calculations are carried out and results are analyzed with the help of matlab software. With the help of numerical solutions we demonstrate that in the quantum dots string, Rabi oscillations (RO) are self trapped into stable bright Rabi solitons. The Rabi oscillations in different types of nanostructures have potential applications to the elements of quantum logic and quantum memory.
Positive spaces, generalized semi-densities, and quantum interactions
NASA Astrophysics Data System (ADS)
Canarutto, Daniel
2012-03-01
The basics of quantum particle physics on a curved Lorentzian background are expressed in a formulation which has original aspects and exploits some non-standard mathematical notions. In particular, positive spaces and generalized semi-densities (in a distributional sense) are shown to link, in a natural way, discrete multi-particle spaces to distributional bundles of quantum states. The treatment of spinor and boson fields is partly original also from an algebraic point of view and suggests a non-standard approach to quantum interactions. The case of electroweak interactions provides examples.
Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors
Dey, Anup; Maiti, Biswajit; Chanda, Debasree
2014-04-14
A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup →}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1−x}Cd{sub x}Te, and In{sub 1−x}Ga{sub x}As{sub y}P{sub 1−y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.
Experimental realization of a strongly interacting quantum memory
NASA Astrophysics Data System (ADS)
Li, Lin; Kuzmich, Alex
2016-05-01
A quantum memory is a device which enables the storage and retrieval of quantum states of light. Ground atomic states interact only weakly with the environment and with each other, enabling memories with long storage times. However, for scalable generation and distillation of entanglement within distributed quantum information systems, it is desirable to controllably switch on and off interactions between the individual atoms. We realize a strongly interacting quantum memory by coupling the ground state of an ultra-cold atomic gas to a highly excited Rydberg state. The memory is subsequently retrieved into a propagating light field which is measured using the Hanbury Brown-Twiss photo-electric detection. The results reveal memory transformation from an initially prepared coherent state into the state of single excitation.
NASA Astrophysics Data System (ADS)
Belousov, P. Ya; Dubnishchev, Yu N.; Meledin, V. G.
1988-03-01
It is shown that optical velocimeters using diffraction beam splitters are not critically sensitive to the stability of the emission wavelength of a semiconductor laser. A functional scheme of a semiconductor laser source with systems for stabilization of the temperature and pump current is described. The technical characteristics are given of a semiconductor-laser velocimeter for the determination of the velocity and length of rolling stock.
Quantum Theory of Atomic and Molecular Structures and Interactions
NASA Astrophysics Data System (ADS)
Makrides, Constantinos
This dissertation consists of topics in two related areas of research that together provide quantum mechanical descriptions of atomic and molecular interactions and reactions. The first is the ab initio electronic structure calculation that provides the atomic and molecular interaction potential, including the long-range potential. The second is the quantum theory of interactions that uses such potentials to understand scattering, long-range molecules, and reactions. In ab initio electronic structure calculations, we present results of dynamic polarizabilities for a variety of atoms and molecules, and the long-range dispersion coefficients for a number of atom-atom and atom-molecule cases. We also present results of a potential energy surface for the triatomic lithium-ytterbium-lithium system, aimed at understanding the related chemical reactions. In the quantum theory of interactions, we present a multichannel quantum-defect theory (MQDT) for atomic interactions in a magnetic field. This subject, which is complex especially for atoms with hyperfine structure, is essential for the understanding and the realization of control and tuning of atomic interactions by a magnetic field: a key feature that has popularized cold atom physics in its investigations of few-body and many-body quantum systems. Through the example of LiK, we show how MQDT provides a systematic and an efficient understanding of atomic interaction in a magnetic field, especially magnetic Feshbach resonances in nonzero partial waves.
Synthesis, characterization, Raman, and surface enhanced Raman studies of semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Pan, Yi
The major contributions and discoveries of the dissertation include: (1) Homogeneous nucleation processes for the formation of nanocrystals can occur at low temperature and do not need to proceed at high temperature to overcome a high energy barrier. Monodisperse PbS quantum dots (QDs) obtained with nucleation and growth at 45°C support this finding. (2) Monodisperse single elemental Se QDs can be produced by simple solution crystallization from TDE (1-tetradecene) or ODE (1-octadecene). (3) TDE is a better non-coordinating solvent compare to ODE. STDE (S dissolved in TDE) and SeTDE (Se dissolved in TDE) are stable reagents with long storage time. They can be used as universal precursors for S-containing and Se-containing QDs. (4) QDs synthesis can be carried out at low temperature and relatively short reaction time using the simple, non-injection, one-pot synthetic method. (5) The one-pot method can be extended for the synthesis of QDs and graphene oxide nanocomposites and metal and graphene oxide nanocomposites. (6) PbCl2-OLA (oleylamine) is a universal system for the synthesis of Pb-chaclogenides QDs. (7) Surface enhanced Raman spectroscopy (SERS) is used to probe both size and wave length dependent quantum confinement effects (QCEs) of PbS QDs. (8) Raman spectroscopy is a powerful tool to elucidate crystal structure of Se nanoclusters with size of 1--2 nm. Semiconductor QDs have attracted considerable attention due to their potential for energy-efficient materials in optoelectronic and solar cell applications. When the radius of a QD is decreased to that of the exciton Bohr radius, the valence and conduction bands are known to split into narrower bands due to QCEs. QCEs are both size and wave length dependent. We have developed, synthesized and characterized a series of Pb-chaclogenide QDs, which all the sizes of the QDs are monodisperse and smaller than their respective exciton Bohr radius, to study the QCEs of these QDs. SERS is used as a crucial tool to
Gazouli, M; Liandris, E; Andreadou, M; Sechi, L A; Masala, S; Paccagnini, D; Ikonomopoulos, J
2010-08-01
Here we present the development of a specific DNA detection method using fluorescent semiconductor quantum dots (QDs) and magnetic beads (MBs) for fast detection of Mycobacterium spp., dispensing with the need for DNA amplification. Two biotinylated oligonucleotide probes were used to recognize and detect specific complementary mycobacterial target DNA through a sandwich hybridization reaction. Cadmium selenite QDs conjugated with streptavidin and species-specific probes were used to produce a fluorescent signal. MBs conjugated with streptavidin and a genus-specific probe were used to isolate and concentrate the DNA targets. The application of the proposed method to isolated bacteria produced the expected result in all cases. The minimum detection limit of the assay was defined as 12.5 ng of DNA diluted in a sample volume of 20 microl. In order to obtain an indication of the method's performance with clinical samples, we applied the optimized assay to the detection of Mycobacterium tuberculosis in DNA isolated from bronchoalveolar lavage specimens from patients with tuberculosis and Mycobacterium avium subsp. paratuberculosis in DNA isolated from feces and paraffin-embedded tissues in comparison with culture, Ziehl-Neelsen staining, and real-time PCR. The concordance of these methods compared to the proposed method with regard to positive and negative samples varied between 53.84% and 87.23% and between 84.61% and 100%, respectively. The overall accuracy of the QD assay compared to real-time PCR was 70 to 90% depending on the type of clinical material. The proposed diagnostic assay offers a simple, rapid, specific, and cost-effective method for direct detection and identification of mycobacterial DNA in clinical samples. PMID:20554817
Janipour, Mohsen; Misirlioglu, Ibrahim Burc; Sendur, Kursat
2016-01-01
Spatial charge distribution for biased semiconductors fundamentally differs from metals since they can allow inhomogeneous charge distributions due to penetration of the electric field, as observed in the classical Schottky junctions. Similarly, the electrostatics of the dielectric/semiconductor interface can lead to a carrier depletion or accumulation in the semiconductor side when under applied bias. In this study, we demonstrate that the inhomogeneous carrier accumulation in a moderately p-doped GaAs–dielectric interface can be tailored for tunable plasmonics by an external voltage. Solving Maxwell’s equations in the doped GaAs-dielectric stack, we investigate the tunability of the surface plasmon and phonon polaritons’ interaction via an external bias. The plasmonic mode analysis of such an interface reveals interesting dispersion curves for surface plasmon and phonon polariton interactions that are not possible in metals. We show that the plasmon dispersion curve can be engineered through an external bias using the inherent properties of the p-doped GaAs– dielectric interface. PMID:27698393
NASA Astrophysics Data System (ADS)
Janipour, Mohsen; Misirlioglu, Ibrahim Burc; Sendur, Kursat
2016-10-01
Spatial charge distribution for biased semiconductors fundamentally differs from metals since they can allow inhomogeneous charge distributions due to penetration of the electric field, as observed in the classical Schottky junctions. Similarly, the electrostatics of the dielectric/semiconductor interface can lead to a carrier depletion or accumulation in the semiconductor side when under applied bias. In this study, we demonstrate that the inhomogeneous carrier accumulation in a moderately p-doped GaAs–dielectric interface can be tailored for tunable plasmonics by an external voltage. Solving Maxwell’s equations in the doped GaAs-dielectric stack, we investigate the tunability of the surface plasmon and phonon polaritons’ interaction via an external bias. The plasmonic mode analysis of such an interface reveals interesting dispersion curves for surface plasmon and phonon polariton interactions that are not possible in metals. We show that the plasmon dispersion curve can be engineered through an external bias using the inherent properties of the p-doped GaAs– dielectric interface.
Peng, Juan Duan, Yifeng; Chen, PeiJian; Peng, Yan
2015-03-15
Analysis of the electronic properties of a two-dimensional (2D) deformed honeycomb structure arrayed by semiconductor quantum dots (QDs) is conducted theoretically by using tight-binding method in the present paper. Through the compressive or tensile deformation of the honeycomb lattice, the variation of energy spectrum has been explored. We show that, the massless Dirac fermions are generated in this adjustable system and the positions of the Dirac cones as well as slope of the linear dispersions could be manipulated. Furthermore, a clear linear correspondence between the distance of movement d (the distance from the Dirac points to the Brillouin zone corners) and the tunable bond angle α of the lattice are found in this artificial planar QD structure. These results provide the theoretical basis for manipulating Dirac fermions and should be very helpful for the fabrication and application of high-mobility semiconductor QD devices.
NASA Astrophysics Data System (ADS)
Pandey, Sumeet C.
The enhanced functionality and tunability of electronic nanomaterials enables the development of next-generation photovoltaic, optoelectronic, and electronic devices, as well as biomolecular tags. Design and efficient synthesis of such semiconductor nanomaterials require a fundamental understanding of the underlying process-structure/composition-property-function relationships. To this end, this thesis focuses on a systematic, comprehensive analysis of the physical and chemical phenomena that determine the composition and properties of semiconductor nanomaterials. Through synergistic combination of computational modeling and experimental studies, the thesis addresses the thermodynamics and kinetics that are relevant during synthesis and processing and their resulting impact on the properties of silicon thin films and ternary quantum dots (TQDs) of compound semiconductors. The thesis presents a computational study of the growth mechanisms of plasma deposited a-Si:H thin films based on kinetic Monte Carlo (KMC) simulations according to a transition probability database constructed by first-principles density functional theory (DFT) calculations. Based on the results, a comprehensive model is proposed for a-Si:H thin-film growth by plasma deposition under conditions that make the silyl (SiH3) radical the dominant deposition precursor. It is found that the relative roles of surface coordination defects are crucial in determining the surface composition of plasma deposited a-Si:H films and should be properly accounted for. The KMC predictions for the temperature dependence (over the range from 300 K to 700 K) of the surface concentration of SiHx(s) (x = 1,2,3) surface hydride species, the surface hydrogen content, and the surface dangling-bond coverage are in agreement with experimental measurements. In addition, the thesis details a systematic analysis of equilibrium compositional distribution in TQDs and their effects on the electronic and optoelectronic properties
NASA Astrophysics Data System (ADS)
Pinaud, Fabien Florent
2007-12-01
A new surface chemistry has been developed for the solubilization and biofunctionalization of inorganic semiconductor nanocrystals fluorescent probes, also known as quantum dots. This chemistry is based on the surface coating of quantum dots with custom-designed polycysteine peptides and yields water-soluble, small, monodispersed and colloidally stable probes that remain bright and photostable in complex biological milieus. This peptide coating strategy was successfully tested on several types of core and core-shell quantum dots emitting from the visible (e.g. CdSe/ZnS) to the NIR spectrum range (e.g. CdTe/CdSe/ZnS). By taking advantage of the versatile physico-chemical properties of peptides, a peptide "toolkit" was designed and employed to impart several biological functions to individual quantum dots and control their biochemical activity at the nanometer scale. These biofunctionalized peptide-coated quantum dots were exploited in very diverse biological applications. Near-infrared emitting quantum dot probes were engineered with optimized blood circulation and biodistribution properties for in vivo animal imaging. Visible emitting quantum dots were used for single molecule tracking of raft-associated GPI-anchored proteins in live cells. This last application revealed the presence of discrete and non-caveolar lipid microdomains capable of impeding free lateral diffusions in the plasma membrane of Hela cells. Imaging and tracking of peptide-coated quantum dots provided the first direct evidence that microdomains having the composition and behavior expected for lipid rafts can induce molecular compartmentalization in the membrane of living cells.
Single particle density of trapped interacting quantum gases
Bala, Renu; Bosse, J.; Pathak, K. N.
2015-05-15
An expression for single particle density for trapped interacting gases has been obtained in first order of interaction using Green’s function method. Results are easily simplified for homogeneous quantum gases and are found to agree with famous results obtained by Huang-Yang-Luttinger and Lee-Yang.
Quantum spin Hall insulators with interactions and lattice anisotropy
NASA Astrophysics Data System (ADS)
Wu, Wei; Rachel, Stephan; Liu, Wu-Ming; Le Hur, Karyn
2012-05-01
We investigate the interplay between spin-orbit coupling and electron-electron interactions on the honeycomb lattice, combining the cellular dynamical mean-field theory and its real-space extension with analytical approaches. We provide a thorough analysis of the phase diagram and temperature effects at weak spin-orbit coupling. We systematically discuss the stability of the quantum spin Hall phase toward interactions and lattice anisotropy, resulting in the plaquette-honeycomb model. We also show the evolution of the helical edge states characteristic of quantum spin Hall insulators as a function of Hubbard interaction and anisotropy. At very weak spin-orbit coupling and intermediate electron-electron interactions, we substantiate the existence of a quantum spin liquid phase.
Phonon-electron interactions in piezoelectric semiconductor bulk acoustic wave resonators.
Gokhale, Vikrant J; Rais-Zadeh, Mina
2014-07-08
This work presents the first comprehensive investigation of phonon-electron interactions in bulk acoustic standing wave (BAW) resonators made from piezoelectric semiconductor (PS) materials. We show that these interactions constitute a significant energy loss mechanism and can set practical loss limits lower than anharmonic phonon scattering limits or thermoelastic damping limits. Secondly, we theoretically and experimentally demonstrate that phonon-electron interactions, under appropriate conditions, can result in a significant acoustic gain manifested as an improved quality factor (Q). Measurements on GaN resonators are consistent with the presented interaction model and demonstrate up to 35% dynamic improvement in Q. The strong dependencies of electron-mediated acoustic loss/gain on resonance frequency and material properties are investigated. Piezoelectric semiconductors are an extremely important class of electromechanical materials, and this work provides crucial insights for material choice, material properties, and device design to achieve low-loss PS-BAW resonators along with the unprecedented ability to dynamically tune resonator Q.
Phonon-Electron Interactions in Piezoelectric Semiconductor Bulk Acoustic Wave Resonators
Gokhale, Vikrant J.; Rais-Zadeh, Mina
2014-01-01
This work presents the first comprehensive investigation of phonon-electron interactions in bulk acoustic standing wave (BAW) resonators made from piezoelectric semiconductor (PS) materials. We show that these interactions constitute a significant energy loss mechanism and can set practical loss limits lower than anharmonic phonon scattering limits or thermoelastic damping limits. Secondly, we theoretically and experimentally demonstrate that phonon-electron interactions, under appropriate conditions, can result in a significant acoustic gain manifested as an improved quality factor (Q). Measurements on GaN resonators are consistent with the presented interaction model and demonstrate up to 35% dynamic improvement in Q. The strong dependencies of electron-mediated acoustic loss/gain on resonance frequency and material properties are investigated. Piezoelectric semiconductors are an extremely important class of electromechanical materials, and this work provides crucial insights for material choice, material properties, and device design to achieve low-loss PS-BAW resonators along with the unprecedented ability to dynamically tune resonator Q. PMID:25001100
Phonon-Electron Interactions in Piezoelectric Semiconductor Bulk Acoustic Wave Resonators
NASA Astrophysics Data System (ADS)
Gokhale, Vikrant J.; Rais-Zadeh, Mina
2014-07-01
This work presents the first comprehensive investigation of phonon-electron interactions in bulk acoustic standing wave (BAW) resonators made from piezoelectric semiconductor (PS) materials. We show that these interactions constitute a significant energy loss mechanism and can set practical loss limits lower than anharmonic phonon scattering limits or thermoelastic damping limits. Secondly, we theoretically and experimentally demonstrate that phonon-electron interactions, under appropriate conditions, can result in a significant acoustic gain manifested as an improved quality factor (Q). Measurements on GaN resonators are consistent with the presented interaction model and demonstrate up to 35% dynamic improvement in Q. The strong dependencies of electron-mediated acoustic loss/gain on resonance frequency and material properties are investigated. Piezoelectric semiconductors are an extremely important class of electromechanical materials, and this work provides crucial insights for material choice, material properties, and device design to achieve low-loss PS-BAW resonators along with the unprecedented ability to dynamically tune resonator Q.
Chakrabarti, S; Chatterjee, B; Debbarma, S; Ghatak, K P
2015-09-01
In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology.
NASA Astrophysics Data System (ADS)
Liang, Gengchiau; Neophytou, Neophytos; Lundstrom, Mark S.; Nikonov, Dmitri E.
2007-09-01
A real-space quantum transport simulator for graphene nanoribbon (GNR) metal-oxide-semiconductor field-effect transistors (MOSFETs) has been developed and used to examine the ballistic performance of GNR MOSFETs. This study focuses on the impact of quantum effects on these devices and on the effect of different type of contacts. We found that two-dimensional (2D) semi-infinite graphene contacts produce metal-induced-gap states (MIGS) in the GNR channel. These states enhance quantum tunneling, particularly in short channel devices, they cause Fermi level pinning and degrade the device performance in both the ON-state and OFF-state. Devices with infinitely long contacts having the same width as the channel do not indicate MIGS. Even without MIGS quantum tunneling effects such as band-to-band tunneling still play an important role in the device characteristics and dominate the OFF-state current. This is accurately captured in our nonequilibrium Greens' function quantum simulations. We show that both narrow (1.4 nm width) and wider (1.8 nm width) GNRs with 12.5 nm channel length have the potential to outperform ultrascaled Si devices in terms of drive current capabilities and electrostatic control. Although their subthreshold swings under forward bias are better than in Si transistors, tunneling currents are important and prevent the achievement of the theoretical limit of 60 mV/dec.
Interaction effects on the tunneling of electron-hole pairs in coupled quantum dots
NASA Astrophysics Data System (ADS)
Guerrero, Hector M.; Cocoletzi, Gregorio H.; Ulloa, Sergio E.
2001-03-01
The transit time of carriers is beginning to be an important parameter in the physical operation of semiconductor quantum dot `devices'. In the present work, we study the coherent propagation of electron-hole pairs in coupled self-assembled quantum dots in close proximity. These systems, achieved experimentally in a number of different geometries, have been recently implemented as a novel storage of optical information that may give rise to smart pixel technology in the near future [1]. Here, we apply an effective mass hamiltonian approach and solve numerically the time dependent Schroedinger equation of a system of photo-created electron-hole pairs in the dots. Our approach takes into account both Coulomb interactions and confinement effects. The time evolution is investigated in terms of the structural parameters for typical InAs-GaAs dots. Different initial conditions are considered, reflecting the basic processes that would take place in these experiments. We study the probabilities of finding the electron and hole in either the same or adjacent quantum dot, and study carefully the role of interactions in this behavior. [1] T. Lundstrom, W. Schoenfeld, H. Lee, and P. M. Petroff, Science 286, 2312 (1999).
Liu, Siping; Yu, Rong; Li, Jiahua; Wu, Ying
2014-04-07
Generating entangled states attract tremendous interest as the most vivid manifestation of nonlocality of quantum mechanics and also for emerging applications in quantum information processing (QIP). Here, we propose theoretically a scheme for the deterministic generation of a three-qubit W sate with three semiconductor quantum-dot-molecules (QDMs) trapped in spatially separated cavities connected by optical fibers. The proposed scheme takes full advantage of the voltage-controlled tunnelling effects in QDMs, which induces the quantum coherence and further controls the generation of the W entangled state. The influences of the system parameters and various decoherence processes including spontaneous decay and photon leakage on the fidelity of the W state are discussed in details. Numerical results indicate that our scheme is not only robust against these decoherence factors but also insensitive to the deviation of the system parameters from the ideal conditions. Furthermore, the present scheme can be directly extended to realize an N-qubit W state. Also, this scheme can be generically transferred to other physical systems, including circuit quantum electrodynamics and photonic crystal cavities. The results obtained here may be useful in real experiments for realizing QIP in a solid-state platform.
Effective quantum dynamics of interacting systems with inhomogeneous coupling
Lopez, C. E.; Retamal, J. C.; Christ, H.; Solano, E.
2007-03-15
We study the quantum dynamics of a single mode (particle) interacting inhomogeneously with a large number of particles and introduce an effective approach to find the accessible Hilbert space, where the dynamics takes place. Two relevant examples are given: the inhomogeneous Tavis-Cummings model (e.g., N atomic qubits coupled to a single cavity mode, or to a motional mode in trapped ions) and the inhomogeneous coupling of an electron spin to N nuclear spins in a quantum dot.
Circular dichroism spectroscopy of complexes of semiconductor quantum dots with chlorin e6
NASA Astrophysics Data System (ADS)
Kundelev, Evgeny V.; Orlova, Anna O.; Maslov, Vladimir G.; Baranov, Alexsander V.; Fedorov, Anatoly V.
2016-04-01
Experimental investigation of circular dichroism (CD) spectra of complexes based on ZnS:Mn/ZnS and CdSe/ZnS QDs and chlorin e6 (Ce6) molecules in aqua solutions at different pH level, in methanol and in DMSO were carried out. The changes in CD spectra of Ce6 upon its bonding in complex with semiconductor QDs were analyzed. Application of CD spectroscopy allowed to obtain the CD spectrum of luminescent Ce6 dimer for the first time, and to discover a nonluminescent Ce6 aggregate, preliminary identified as a "tetramer", dissymmetry factor of which is 40 times larger than that for its monomer. The analysis of obtained data showed that in complexes with QDs Ce6 can be either in the monomeric form or in the form of non-luminescent tetramer. The interaction of relatively unstable luminescent Ce6 dimerwith QDs leads to its partial monomerization and formation complexes with chlorin e6 in monomeric form.
One-dimensional quantum transport in hybrid metal-semiconductor nanotube systems
NASA Astrophysics Data System (ADS)
Gelin, Maxim; Bondarev, Igor
We study the inter-play between the intrinsic 1D conductance of metallic atomic wires (AWs) and plasmon mediated near-field effects for semiconducting single wall carbon nanotubes (CNs) that encapsulate AWs of finite length. We use the matrix Green's functions formalism to develop an electron transfer theory for such a hybrid quasi-1D metal-semiconductor nanotube system. The theory predicts Fano resonances in electron transmission through the system. That is the AW-CN near-field interaction blocks some of the pristine AW transmission band channels to open up new coherent channels in the CN forbidden gap outside the pristine AW transmission band. This makes the entire hybrid system transparent in the energy domain where neither of the individual pristine constituents, neither AW nor CN, are transparent. The effect can be used to control electron charge transfer in semiconducting CN based devices for nanoscale energy conversion, separation and storage. Nsf-ECCS-1306871 (M.G.), DOE-DE-SC0007117 (I.B.).
Duxbury, Geoffrey; Langford, Nigel; McCulloch, Michael T; Wright, Stephen
2005-11-01
The Quantum cascade (QC) laser is an entirely new type of semiconductor device in which the laser wavelength depends on the band-gap engineering. It can be made to operate over a much larger range than lead salt lasers, covering significant parts of both the infrared and submillimetre regions, and with higher output power. In this tutorial review we survey some of the applications of these new lasers, which range from trace gas detection for atmospheric or medical purposes to sub-Doppler and time dependent non-linear spectroscopy.
Mesaritakis, Charis; Kapsalis, Alexandros; Simos, Hercules; Simos, Christos; Krakowski, Michel; Krestnikov, Igor; Syvridis, Dimitris
2013-07-15
In this Letter, a design for a tapered InAs/InGaAs quantum dot semiconductor optical amplifier is proposed and experimentally evaluated. The amplifier's geometry was optimized in order to reduce gain saturation effects and improve gain efficiency and beam quality. The experimental measurements confirm that the proposed amplifier allows for an elevated optical gain in the saturation regime, whereas a five-fold increase in the coupling efficiency to a standard single mode optical fiber is observed, due to the improvement in the beam quality factor M² of the emitted beam. PMID:23939062
Toma, Andrea; Tuccio, Salvatore; Prato, Mirko; De Donato, Francesco; Perucchi, Andrea; Di Pietro, Paola; Marras, Sergio; Liberale, Carlo; Proietti Zaccaria, Remo; De Angelis, Francesco; Manna, Liberato; Lupi, Stefano; Di Fabrizio, Enzo; Razzari, Luca
2015-01-14
Terahertz spectroscopy has vast potentialities in sensing a broad range of elementary excitations (e.g., collective vibrations of molecules, phonons, excitons, etc.). However, the large wavelength associated with terahertz radiation (about 300 μm at 1 THz) severely hinders its interaction with nano-objects, such as nanoparticles, nanorods, nanotubes, and large molecules of biological relevance, practically limiting terahertz studies to macroscopic ensembles of these compounds, in the form of thick pellets of crystallized molecules or highly concentrated solutions of nanomaterials. Here we show that chains of terahertz dipole nanoantennas spaced by nanogaps of 20 nm allow retrieving the spectroscopic signature of a monolayer of cadmium selenide quantum dots, a significant portion of the signal arising from the dots located within the antenna nanocavities. A Fano-like interference between the fundamental antenna mode and the phonon resonance of the quantum dots is observed, accompanied by an absorption enhancement factor greater than one million. NETS can find immediate applications in terahertz spectroscopic studies of nanocrystals and molecules at extremely low concentrations. Furthermore, it shows a practicable route toward the characterization of individual nano-objects at these frequencies.
Interaction of phase and amplitude shaping in an external cavity semiconductor laser
NASA Astrophysics Data System (ADS)
Pilny, Rouven H.; Döpke, Benjamin; Balzer, Jan C.; Brenner, Carsten; Klehr, Andreas; Erbert, Götz; Tränkle, Günther; Hofmann, Martin R.
2016-03-01
Ultrashort pulse generation with semiconductor lasers poses a promising alternative to currently available femtosecond laser sources like solid state and fiber lasers. Semiconductor devices can be produced inexpensively, are energy efficient and their wavelength can be designed by band gap engineering. Furthermore they feature a tunable repetition rate. Yet pulse duration and peak power of those devices limit their potential for applications so far. However, recent research demonstrated a reduction of the pulse width from 534 fs (full width half maximum) to 216 fs by shaping the spectrally resolved spectral phase and amplitude inside the cavity. The utilized system consisted of a mode-locked edge emitting semiconductor laser diode, a spatial light modulator inside the external cavity to carry out the pulse shaping and an evolutionary algorithm to optimize the phase and amplitude. Here we present the results of separate phase and amplitude shaping as well as their interaction if optimized together at the same time. Furthermore we demonstrate the flexibility of the phase and amplitude shaping with respect to each other. Thus we expect of our system to enable adaptation to a resonator external dispersion.
Calendar effects in quantum mechanics in view of interactive holography
NASA Astrophysics Data System (ADS)
Berkovich, Simon
2013-04-01
Quantum mechanics in terms of interactive holography appears as `normal' science [1]. With the holography quantum behavior is determined by the interplay of material formations and their conjugate images. To begin with, this effortlessly elucidates the nonlocality in quantum entanglements. Then, it has been shown that Schr"odinger's dynamics for a single particle arises from Bi-Fragmental random walks of the particle itself and its holographic image. For many particles this picture blurs with fragments merging as bosons or fermions. In biomolecules, swapping of particles and their holographic placeholders leads to self-replication of the living matter. Because of broad interpretations of quantum formalism direct experiments attributing it to holography may not be very compelling. The holographic mechanism better reveals as an absolute frame of reference. A number of physical and biological events exhibit annual variations when Earth orbital position changes with respect to the universal holographic mechanism. The well established calendar variations of heart attacks can be regarded as a positive outcome of a generalization of the Michelson experiment, where holography is interferometry and ailing hearts are detectors of pathologically replicated proteins. Also, there have been already observed calendar changes in radioactive decay rates. The same could be expected for various fine quantum experiences, like, e.g., Josephson tunneling. In other words, Quantum Mechanics (February) Quantum Mechanics (August). [1] S. Berkovich, ``A comprehensive explanation of quantum mechanics,'' www.cs.gwu.edu/research/technical-report/170 .
Quench dynamics in long-range interacting quantum systems
NASA Astrophysics Data System (ADS)
Gong, Zhexuan
2016-05-01
A distinctive feature of atomic, molecular, and optical systems is that interactions between particles are often long-ranged. Control techniques from quantum optics often allow one to tune the pattern of these long-range interactions, creating an entirely new degree of freedom, absent in typical condensed matter systems. These tunable long-range interactions can result in very different far-from-equilibrium dynamics compared to systems with only short-range interactions. In the first half of the talk, I will describe how very general types of long-range interactions can qualitatively change the entanglement and correlation growth shortly after a quantum quench. In the second half of the talk I will show that, at longer times, long-range interactions can lead to exotic quasi-stationary states and dynamical phase transitions. These theoretical ideas have been explored in recent trapped-ion experiments, and connections to these experiments will be emphasized in both parts of the talk.
Zeeman effect and magnetic anomalies in narrow-gap semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Prado, S. J.; Trallero-Giner, C.; López-Richard, V.; Alcalde, A. M.; Marques, G. E.
2004-01-01
We present a systematic theoretical study, based on the Kane-Weiler 8×8 k· p model, of the linear Zeeman splitting introduced by the interaction between the angular momentum and the magnetic field which can give a measure of the non-linear Zeeman effect associated with interband coupling and diamagnetic contributions. The conduction and valence bands g-factors are calculated for InSb spherical and semi-spherical quantum dots. The calculations of the g-factors showed an almost linear dependence, for the ground state, on the magnetic field. We have also found that the strong magnetic field dependence as well as the dependence on the dot size of the effective spin splitting can be unambiguously attributed to the strength of the inter-level mixing.
Sadhu, Suparna; Patra, Amitava
2013-08-26
This article highlights some physical studies on the relaxation dynamics and Förster resonance energy transfer (FRET) of semiconductor quantum dots (QDs) and the way these phenomena change with size, shape, and composition of the QDs. The understanding of the excited-state dynamics of photoexcited QDs is essential for technological applications such as efficient solar energy conversion, light-emitting diodes, and photovoltaic cells. Here, our emphasis is directed at describing the influence of size, shape, and composition of the QDs on their different relaxation processes, that is, radiative relaxation rate, nonradiative relaxation rate, and number of trap states. A stochastic model of carrier relaxation dynamics in semiconductor QDs was proposed to correlate with the experimental results. Many recent studies reveal that the energy transfer between the QDs and a dye is a FRET process, as established from 1/d(6) distance dependence. QD-based energy-transfer processes have been used in applications such as luminescence tagging, imaging, sensors, and light harvesting. Thus, the understanding of the interaction between the excited state of the QD and the dye molecule and quantitative estimation of the number of dye molecules attached to the surface of the QD by using a kinetic model is important. Here, we highlight the influence of size, shape, and composition of QDs on the kinetics of energy transfer. Interesting findings reveal that QD-based energy-transfer processes offer exciting opportunities for future applications. Finally, a tentative outlook on future developments in this research field is given.
Zhao, Jing; Nair, Gautham; Fisher, Brent R.; Bawendi, Moungi G.
2010-04-16
Semiconductor nanocrystals emit light intermittently; i.e., they “blink,” under steady illumination. The dark periods have been widely assumed to be due to photoluminescence (PL) quenching by an Auger-like process involving a single additional charge present in the nanocrystal. Our results challenge this long-standing assumption. Close examination of exciton PL intensity time traces of single CdSe(CdZnS) core(shell) nanocrystals reveals that the dark state PL quantum yield can be 10 times less than the biexciton PL quantum yield. In addition, we observe spectrally resolved multiexciton emission and find that it also blinks with an on/off ratio greater than 10:1 . These results directly contradict the predictions of the charging model.
2012-01-01
Deterministic sources of polarization entangled photon pairs on demand are considered as important building blocks for quantum communication technology. It has been demonstrated that semiconductor quantum dots (QDs), which exhibit a sufficiently small excitonic fine structure splitting (FSS) can be used as triggered, on-chip sources of polarization entangled photon pairs. As-grown QDs usually do not have the required values of the FSS, making the availability of post-growth tuning techniques highly desired. This article reviews the effect of different post-growth treatments and external fields on the FSS such as thermal annealing, magnetic fields, the optical Stark effect, electric fields, and anisotropic stress. As a consequence of the tuning of the FSS, for some tuning techniques a rotation of the polarization of the emitted light is observed. The joint modification of polarization orientation and FSS can be described by an anticrossing of the bright excitonic states. PMID:22726724
Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers
Korenev, V. V. Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.
2013-10-15
It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.
Designing learning environments to teach interactive Quantum Physics
NASA Astrophysics Data System (ADS)
Gómez Puente, Sonia M.; Swagten, Henk J. M.
2012-10-01
This study aims at describing and analysing systematically an interactive learning environment designed to teach Quantum Physics, a second-year physics course. The instructional design of Quantum Physics is a combination of interactive lectures (using audience response systems), tutorials and self-study in unit blocks, carried out with small groups. Individual formative feedback was introduced as a rapid assessment tool to provide an overview on progress and identify gaps by means of questioning students at three levels: conceptual; prior knowledge; homework exercises. The setup of Quantum Physics has been developed as a result of several loops of adjustments and improvements from a traditional-like type of teaching to an interactive classroom. Results of this particular instructional arrangement indicate significant gains in students' achievements in comparison with the traditional structure of this course, after recent optimisation steps such as the implementation of an individual feedback system.
Yokoyama, Tomohiro; Eto, Mikio; Nazarov, Yuli V.
2013-12-04
We theoretically study the current-phase relation in semiconductor nanowire Josephson junction in the presence of spin-orbit interaction. In the nanowire, the impurity scattering with strong SO interaction is taken into account using the random matrix theory. In the absence of magnetic field, the Josephson current I and phase difference φ between the superconductors satisfy the relation of I(φ) = –I(–φ). In the presence of magnetic field along the nanowire, the interplay between the SO interaction and Zeeman effect breaks the current-phase relation of I(φ) = –I(–φ). In this case, we show that the critical current depends on the current direction, which qualitatively agrees with recent experimental findings.
Short-time-interaction quantum measurement through an incoherent mediator
Casanova, J.; Romero, G.; Lizuain, I.; Muga, J. G.; Retamal, J. C.; Roos, C. F.; Solano, E.
2010-06-15
We propose a method of indirect measurements where a probe is able to read, in short interaction times, the quantum state of a remote system through an incoherent third party, hereafter called a mediator. The probe and system can interact briefly with the mediator in an incoherent state but not directly among themselves and, nevertheless, the transfer of quantum information can be achieved with robustness. We exemplify our measurement scheme with a paradigmatic example of this tripartite problem--a qubit-oscillator-qubit setup--and discuss different physical scenarios, pointing out the associated advantages and limitations.
Beard, Matthew C; Midgett, Aaron G; Hanna, Mark C; Luther, Joseph M; Hughes, Barbara K; Nozik, Arthur J
2010-08-11
Multiple exciton generation (MEG) in quantum dots (QDs) and impact ionization (II) in bulk semiconductors are processes that describe producing more than one electron-hole pair per absorbed photon. We derive expressions for the proper way to compare MEG in QDs with II in bulk semiconductors and argue that there are important differences in the photophysics between bulk semiconductors and QDs. Our analysis demonstrates that the fundamental unit of energy required to produce each electron-hole pair in a given QD is the band gap energy. We find that the efficiency of the multiplication process increases by at least 2 in PbSe QDs compared to bulk PbSe, while the competition between cooling and multiplication favors multiplication by a factor of 3 in QDs. We also demonstrate that power conversion efficiencies in QD solar cells exhibiting MEG can greatly exceed conversion efficiencies of their bulk counterparts, especially if the MEG threshold energy can be reduced toward twice the QD band gap energy, which requires a further increase in the MEG efficiency. Finally, we discuss the research challenges associated with achieving the maximum benefit of MEG in solar energy conversion since we show the threshold and efficiency are mathematically related.
Beard, Matthew C.; Midgett, Aaron G.; Hanna, Mark C.; Luther, Joseph M.; Hughes, Barbara K.; Nozik, Arthur J.
2010-07-26
Multiple exciton generation (MEG) in quantum dots (QDs) and impact ionization (II) in bulk semiconductors are processes that describe producing more than one electron-hole pair per absorbed photon. We derive expressions for the proper way to compare MEG in QDs with II in bulk semiconductors and argue that there are important differences in the photophysics between bulk semiconductors and QDs. Our analysis demonstrates that the fundamental unit of energy required to produce each electron-hole pair in a given QD is the band gap energy. We find that the efficiency of the multiplication process increases by at least 2 in PbSe QDs compared to bulk PbSe, while the competition between cooling and multiplication favors multiplication by a factor of 3 in QDs. We also demonstrate that power conversion efficiencies in QD solar cells exhibiting MEG can greatly exceed conversion efficiencies of their bulk counterparts, especially if the MEG threshold energy can be reduced toward twice the QD band gap energy, which requires a further increase in the MEG efficiency. Finally, we discuss the research challenges associated with achieving the maximum benefit of MEG in solar energy conversion since we show the threshold and efficiency are mathematically related.
Medvid, Artur; Onufrijevs, Pavels; Mychko, Alexander
2011-01-01
On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity. PMID:22060172
NASA Astrophysics Data System (ADS)
Lischner, Johannes; Vigil-Fowler, Derek; Louie, Steven G.
2014-03-01
We present theoretical calculations for the spectral functions and single-particle densities of states of the two-dimensional electron gas in semiconductor quantum wells at different electron densities using the GW plus cumulant method. We compare our results to GW only calculations and find significant differences in the description of the satellites between the two theories: While GW theory predicts the existence of a plasmaron excitation, no such excitation is found in GW plus cumulant theory. We compare our results to experimental tunneling spectra from semiconductor quantum wells and find good agreement for the satellite properties.
Artificial atoms on semiconductor surfaces
Tisdale, W. A.; Zhu, X.-Y.
2011-01-01
Semiconductor nanocrystals are called artificial atoms because of their atom-like discrete electronic structure resulting from quantum confinement. Artificial atoms can also be assembled into artificial molecules or solids, thus, extending the toolbox for material design. We address the interaction of artificial atoms with bulk semiconductor surfaces. These interfaces are model systems for understanding the coupling between localized and delocalized electronic structures. In many perceived applications, such as nanoelectronics, optoelectronics, and solar energy conversion, interfacing semiconductor nanocrystals to bulk materials is a key ingredient. Here, we apply the well established theories of chemisorption and interfacial electron transfer as conceptual frameworks for understanding the adsorption of semiconductor nanocrystals on surfaces, paying particular attention to instances when the nonadiabatic Marcus picture breaks down. We illustrate these issues using recent examples from our laboratory. PMID:21097704
NASA Astrophysics Data System (ADS)
Qasaimeh, Omar
2016-04-01
We have studied the characteristics of optical bistability of different types of optical modes amplified by small-size quantum dot vertical cavity semiconductor optical amplifiers operated in reflection. Our analysis reveals that TE01 mode exhibits stronger intensity-dependent non-linearity in small radius devices, which results in stronger optical phase modulation and therefore larger hysteresis width compared with the other modes. The effect of the wavelength detuning of the input signal on the shape of the hysteresis loop is studied. We find that butterfly hysteresis loop exhibits the largest hysteresis width compared with clockwise and counterclockwise loops. Our analysis reveals that doping the quantum dots with p-type doping slightly reduces the hysteresis width while doping the dots with n-type doping clearly increases the hysteresis width for any wavelength detuning. We estimate that the hysteresis width of quantum dot active layer will exhibit higher hysteresis width compared with quantum well active layer having the same threshold gain.
Quantum Interactive Dualism: An Alternative to Materialism
Stapp, Henry P
2005-06-01
Materialism rest implicitly upon the general conception of nature promoted by Galileo and Newton during the seventeenth century. It features the causal closure of the physical: The course of physically described events for all time is fixed by laws that refer exclusively to the physically describeable features of nature, and initial conditions on these feature. No reference to subjective thoughts or feeling of human beings enter. That simple conception of nature was found during the first quarter of the twentieth century to be apparently incompatible with the empirical facts. The founders of quantum theory created a new fundamental physical theory, quantum theory, which introduced crucially into the causal structure certain conscious choices made by human agents about how they will act. These conscious human choices are ''free'' in the sense that they are not fixed by the known laws. But they can influence the course of physically described events. Thus the principle of the causal closure of the physical fails. Applications in psycho-neuro-dynamics are described.
Strongly interacting photons in a quantum nonlinear medium
NASA Astrophysics Data System (ADS)
Peyronel, Thibault
2014-05-01
Photons are fast and robust carriers of information but their lack of mutual interactions hinders their use in quantum information protocols. Interactions can be mediated by nonlinear media, and optical nonlinearities at the single photon level are a long-standing goal of quantum optical science. By coherently coupling slowly propagating photons to Rydberg states in a dense cold atomic gas, we create a single-pass medium with large photon-photon interactions. We first demonstrate that combining electromagnetically induced transparency techniques with the Rydberg blockade effect leads to strong dissipative interactions between individual photons. As a result, the simultaneous propagation of photons is suppressed in an otherwise transparent medium, and coherent laser pulses are converted into single photons. We subsequently explore the regime of coherent interactions, where simultaneously propagating photons acquire a large conditional phase-shift and become entangled. In this regime, the photons behave as massive particles exerting an attractive force onto each other and their evolution is governed by the existence of a photonic bound-state. This work paves the way for cavity-free deterministic optical quantum gates and quantum many-body physics with light.
Bosson, Maël; Grudinin, Sergei; Redon, Stephane
2013-03-01
We present a novel Block-Adaptive Quantum Mechanics (BAQM) approach to interactive quantum chemistry. Although quantum chemistry models are known to be computationally demanding, we achieve interactive rates by focusing computational resources on the most active parts of the system. BAQM is based on a divide-and-conquer technique and constrains some nucleus positions and some electronic degrees of freedom on the fly to simplify the simulation. As a result, each time step may be performed significantly faster, which in turn may accelerate attraction to the neighboring local minima. By applying our approach to the nonself-consistent Atom Superposition and Electron Delocalization Molecular Orbital theory, we demonstrate interactive rates and efficient virtual prototyping for systems containing more than a thousand of atoms on a standard desktop computer.
Quantum teleportation of dynamics and effective interactions between remote systems.
Muschik, Christine A; Hammerer, Klemens; Polzik, Eugene S; Cirac, Ignacio J
2013-07-12
Most protocols for quantum information processing consist of a series of quantum gates, which are applied sequentially. In contrast, interactions between matter and fields, for example, as well as measurements such as homodyne detection of light are typically continuous in time. We show how the ability to perform quantum operations continuously and deterministically can be leveraged for inducing nonlocal dynamics between two separate parties. We introduce a scheme for the engineering of an interaction between two remote systems and present a protocol that induces a dynamics in one of the parties that is controlled by the other one. Both schemes apply to continuous variable systems, run continuously in time, and are based on real-time feedback. PMID:23889374
Quantum teleportation of dynamics and effective interactions between remote systems.
Muschik, Christine A; Hammerer, Klemens; Polzik, Eugene S; Cirac, Ignacio J
2013-07-12
Most protocols for quantum information processing consist of a series of quantum gates, which are applied sequentially. In contrast, interactions between matter and fields, for example, as well as measurements such as homodyne detection of light are typically continuous in time. We show how the ability to perform quantum operations continuously and deterministically can be leveraged for inducing nonlocal dynamics between two separate parties. We introduce a scheme for the engineering of an interaction between two remote systems and present a protocol that induces a dynamics in one of the parties that is controlled by the other one. Both schemes apply to continuous variable systems, run continuously in time, and are based on real-time feedback.
Electron-phonon interaction in quasi-1D ternary mixed crystals of polar semiconductors
NASA Astrophysics Data System (ADS)
Fan, Yunpeng; Hou, Junhua
2015-07-01
The electron-optical-phonon interaction between an electron and two branches of LO-phonon modes in a quasi-one-dimensional ternary mixed crystal (TMC) of polar semiconductors is studied. The new electron-phonon interaction Hamiltonian including the unit-cell volume variation in TMCs is obtained by using the modified random element isodisplacement model and Born-Huang method. The energies of polaron are numerically calculated for several systems of III-V compounds. A group of III-nitride mixed crystals is also taken into numerical calculation in our theory. It is verified theoretically that the obvious nonlinearity of the polaronic energy and effective mass with the composition is essential and the unit-cell volume effects cannot be neglected except the very weak e-p coupling.
Intracellular nucleic acid interactions facilitated by quantum dots: conceptualizing theranostics.
Chong, Lori; Vannoy, Charles H; Noor, Muhammad Omair; Krull, Ulrich J
2012-04-01
The concept of theranostics arises from the unification of both diagnostic and therapeutic applications into a single package. The implementation of nanoparticles, such as semiconductor quantum dots (QDs), to achieve theranostic applications, offers great potential for development of methods that are suitable for personalized medicine. Researchers have taken advantage of the physiochemical properties of QDs to elicit novel bioconjugation techniques that enable the attachment of multifunctional moieties on the surface of QDs. In this review, the diagnostic and therapeutic applications of QDs that feature the use of nucleic acids are highlighted with a particular emphasis on the possibility of combinatorial applications. Nucleic acid research is of particular interest for gene therapy, and is relevant to the understanding of gene regulation pathways and gene expression dynamics. Recent toxicity studies featuring multifunctional QDs are also examined. Future perspectives discussing the expected development of this field conclude the article. PMID:22834078
Cavity -Quantum Dot interactions and mode coupling in a nanocavity
NASA Astrophysics Data System (ADS)
Kasisomayajula, Vijay; Russo, Onofrio
2009-03-01
We describe an approach for realizing effective manipulation of single electron state level transitions for quantum dots mediated by a nano-cavity. The two quantum dots interact with the cavity for the two dot system in the coulomb blockade energy region. Because of the zero dimensional structure of the quantum dots, the system can be implemented to be a characteristic entity for an efficient generator of single photons. This process is emphatically more selective in the coulomb/spin blockade region, where also, the system efficiency of the single photon event is most likely more probable. Whereas, it is clear that the photon efficiency is small, the cavity quantum electrodynamics (CQED) nature suggests an enhancement in the electron energy state being occupied by the second quantum dot. This is more likely with very strong coupling of the quantum dots to the cavity with cavity quality factors larger than perhaps 10^5. Quality factors in excess of 10^5 have been demonstrated experimentally^1. 1. K. Srinivasan, M. Borselli, T. J. Johnson, P. E. Barclay, O. Painter, A. Stintz, and S. Krishna, Appl. Phys. Lett. 86, 151106 (2005). [ISI
Metal colloids and semiconductor quantum dots: Linear and nonlinear optical properties
NASA Astrophysics Data System (ADS)
Henderson, D. O.; My, R.; Tung, Y.; Ueda, A.; Zhu, J.; Collins, W. E.; Hall, Christopher
1995-08-01
One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantion for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. In general the host material is typically a glass such as optical grade silica. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga and As. An emphasis is placed on host guest interactions between the matrix and the implanted ion and how the matrix effects and implantation parameters can be used to obtain designer level optical devices tailored for specific applications. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. In this part of the program, we are particularly interested in characterizing the thermodynamic and optical properties of these non-composite materials. We also address how phase diagram of the confined material is altered by the interfacial properties between the confined material and the pore wall.
Metal colloids and semiconductor quantum dots: Linear and nonlinear optical properties
NASA Technical Reports Server (NTRS)
Henderson, D. O.; My, R.; Tung, Y.; Ueda, A.; Zhu, J.; Collins, W. E.; Hall, Christopher
1995-01-01
One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantion for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. In general the host material is typically a glass such as optical grade silica. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga and As. An emphasis is placed on host guest interactions between the matrix and the implanted ion and how the matrix effects and implantation parameters can be used to obtain designer level optical devices tailored for specific applications. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. In this part of the program, we are particularly interested in characterizing the thermodynamic and optical properties of these non-composite materials. We also address how phase diagram of the confined material is altered by the interfacial properties between the confined material and the pore wall.
NASA Astrophysics Data System (ADS)
Thompson, Aidan; Foiles, Stephen; Schultz, Peter; Swiler, Laura; Trott, Christian; Tucker, Garritt
2013-03-01
Molecular dynamics (MD) is a powerful condensed matter simulation tool for bridging between macroscopic continuum models and quantum models (QM) treating a few hundred atoms, but is limited by the accuracy of available interatomic potentials. Sound physical and chemical understanding of these interactions have resulted in a variety of concise potentials for certain systems, but it is difficult to extend them to new materials and properties. The growing availability of large QM data sets has made it possible to use more automated machine-learning approaches. Bartók et al. demonstrated that the bispectrum of the local neighbor density provides good regression surrogates for QM models. We adopt a similar bispectrum representation within a linear regression scheme. We have produced potentials for silicon and tantalum, and we are currently extending the method to III-V compounds. Results will be presented demonstrating the accuracy of these potentials relative to the training data, as well as their ability to accurately predict material properties not explicitly included in the training data. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Dept. of Energy Nat. Nuclear Security Admin. under Contract DE-AC04-94AL85000.
Alsing, P. M.; Huang, D. H.; Cardimona, D. A.; Apostolova, T.
2003-09-01
A many-body density-matrix theory is derived by including quasiparticle renormalization of kinetic energy and dipole coupling to an external electromagnetic field, as well as the screening and quantum-interference effects. This theory is applied to a three-level resonant asymmetric double-quantum-well system in which the ground subband is coupled to the upper tunneling-split doublet by a strong external electromagnetic field. By using this theory, the quasiparticle energy-level separations and off-diagonal radiative-decay coupling rates, absorption coefficient, refractive-index function, and scaled subband electron density are calculated as functions of incident photon energy. The effects of quasiparticle renormalization on the quantum interference between a pair of optically induced polarizations are analyzed. The quantum interference is shown to be robust against the Coulomb-interaction effect in the mean-field approximation. The roles played by the dephasing rate and electron density are explained.
Observation of topological transitions in interacting quantum circuits
NASA Astrophysics Data System (ADS)
Roushan, P.; Neill, C.; Chen, Yu; Kolodrubetz, M.; Quintana, C.; Leung, N.; Fang, M.; Barends, R.; Campbell, B.; Chen, Z.; Chiaro, B.; Dunsworth, A.; Jeffrey, E.; Kelly, J.; Megrant, A.; Mutus, J.; O'Malley, P. J. J.; Sank, D.; Vainsencher, A.; Wenner, J.; White, T.; Polkovnikov, A.; Cleland, A. N.; Martinis, J. M.
2014-11-01
Topology, with its abstract mathematical constructs, often manifests itself in physics and has a pivotal role in our understanding of natural phenomena. Notably, the discovery of topological phases in condensed-matter systems has changed the modern conception of phases of matter. The global nature of topological ordering, however, makes direct experimental probing an outstanding challenge. Present experimental tools are mainly indirect and, as a result, are inadequate for studying the topology of physical systems at a fundamental level. Here we employ the exquisite control afforded by state-of-the-art superconducting quantum circuits to investigate topological properties of various quantum systems. The essence of our approach is to infer geometric curvature by measuring the deflection of quantum trajectories in the curved space of the Hamiltonian. Topological properties are then revealed by integrating the curvature over closed surfaces, a quantum analogue of the Gauss-Bonnet theorem. We benchmark our technique by investigating basic topological concepts of the historically important Haldane model after mapping the momentum space of this condensed-matter model to the parameter space of a single-qubit Hamiltonian. In addition to constructing the topological phase diagram, we are able to visualize the microscopic spin texture of the associated states and their evolution across a topological phase transition. Going beyond non-interacting systems, we demonstrate the power of our method by studying topology in an interacting quantum system. This required a new qubit architecture that allows for simultaneous control over every term in a two-qubit Hamiltonian. By exploring the parameter space of this Hamiltonian, we discover the emergence of an interaction-induced topological phase. Our work establishes a powerful, generalizable experimental platform to study topological phenomena in quantum systems.
Observation of topological transitions in interacting quantum circuits.
Roushan, P; Neill, C; Chen, Yu; Kolodrubetz, M; Quintana, C; Leung, N; Fang, M; Barends, R; Campbell, B; Chen, Z; Chiaro, B; Dunsworth, A; Jeffrey, E; Kelly, J; Megrant, A; Mutus, J; O'Malley, P J J; Sank, D; Vainsencher, A; Wenner, J; White, T; Polkovnikov, A; Cleland, A N; Martinis, J M
2014-11-13
Topology, with its abstract mathematical constructs, often manifests itself in physics and has a pivotal role in our understanding of natural phenomena. Notably, the discovery of topological phases in condensed-matter systems has changed the modern conception of phases of matter. The global nature of topological ordering, however, makes direct experimental probing an outstanding challenge. Present experimental tools are mainly indirect and, as a result, are inadequate for studying the topology of physical systems at a fundamental level. Here we employ the exquisite control afforded by state-of-the-art superconducting quantum circuits to investigate topological properties of various quantum systems. The essence of our approach is to infer geometric curvature by measuring the deflection of quantum trajectories in the curved space of the Hamiltonian. Topological properties are then revealed by integrating the curvature over closed surfaces, a quantum analogue of the Gauss-Bonnet theorem. We benchmark our technique by investigating basic topological concepts of the historically important Haldane model after mapping the momentum space of this condensed-matter model to the parameter space of a single-qubit Hamiltonian. In addition to constructing the topological phase diagram, we are able to visualize the microscopic spin texture of the associated states and their evolution across a topological phase transition. Going beyond non-interacting systems, we demonstrate the power of our method by studying topology in an interacting quantum system. This required a new qubit architecture that allows for simultaneous control over every term in a two-qubit Hamiltonian. By exploring the parameter space of this Hamiltonian, we discover the emergence of an interaction-induced topological phase. Our work establishes a powerful, generalizable experimental platform to study topological phenomena in quantum systems.
Single step deposition of an interacting layer of a perovskite matrix with embedded quantum dots
NASA Astrophysics Data System (ADS)
Ngo, Thi Tuyen; Suarez, Isaac; Sanchez, Rafael S.; Martinez-Pastor, Juan P.; Mora-Sero, Ivan
2016-07-01
Hybrid lead halide perovskite (PS) derivatives have emerged as very promising materials for the development of optoelectronic devices in the last few years. At the same time, inorganic nanocrystals with quantum confinement (QDs) possess unique properties that make them suitable materials for the development of photovoltaics, imaging and lighting applications, among others. In this work, we report on a new methodology for the deposition of high quality, large grain size and pinhole free PS films (CH3NH3PbI3) with embedded PbS and PbS/CdS core/shell Quantum Dots (QDs). The strong interaction between both semiconductors is revealed by the formation of an exciplex state, which is monitored by photoluminescence and electroluminescence experiments. The radiative exciplex relaxation is centered in the near infrared region (NIR), ~1200 nm, which corresponds to lower energies than the corresponding band gap of both perovskite (PS) and QDs. Our approach allows the fabrication of multi-wavelength light emitting diodes (LEDs) based on a PS matrix with embedded QDs, which show considerably low turn-on potentials. The presence of the exciplex state of PS and QDs opens up a broad range of possibilities with important implications in both LEDs and solar cells.Hybrid lead halide perovskite (PS) derivatives have emerged as very promising materials for the development of optoelectronic devices in the last few years. At the same time, inorganic nanocrystals with quantum confinement (QDs) possess unique properties that make them suitable materials for the development of photovoltaics, imaging and lighting applications, among others. In this work, we report on a new methodology for the deposition of high quality, large grain size and pinhole free PS films (CH3NH3PbI3) with embedded PbS and PbS/CdS core/shell Quantum Dots (QDs). The strong interaction between both semiconductors is revealed by the formation of an exciplex state, which is monitored by photoluminescence and
Interaction-induced backscattering in short quantum wires
NASA Astrophysics Data System (ADS)
Rieder, M.-T.; Micklitz, T.; Levchenko, A.; Matveev, K. A.
2014-10-01
We study interaction-induced backscattering in clean quantum wires with adiabatic contacts exposed to a voltage bias. Particle backscattering relaxes such systems to a fully equilibrated steady state only on length scales exponentially large in the ratio of bandwidth of excitations and temperature. Here we focus on shorter wires in which full equilibration is not accomplished. Signatures of relaxation then are due to backscattering of hole excitations close to the band bottom which perform a diffusive motion in momentum space while scattering from excitations at the Fermi level. This is reminiscent to the first passage problem of a Brownian particle and, regardless of the interaction strength, can be described by an inhomogeneous Fokker-Planck equation. From general solutions of the latter we calculate the hole backscattering rate for different wire lengths and discuss the resulting length dependence of interaction-induced correction to the conductance of a clean single channel quantum wire.
Exchange interaction effects on waves in magnetized quantum plasmas
Trukhanova, Mariya Iv. Andreev, Pavel A.
2015-02-15
We have applied the many-particle quantum hydrodynamics that includes the Coulomb exchange interaction to magnetized quantum plasmas. We considered a number of wave phenomena that are affected by the Coulomb exchange interaction. Since the Coulomb exchange interaction affects the longitudinal and transverse-longitudinal waves, we focused our attention on the Langmuir waves, the Trivelpiece-Gould waves, the ion-acoustic waves in non-isothermal magnetized plasmas, the dispersion of the longitudinal low-frequency ion-acoustic waves, and low-frequency electromagnetic waves at T{sub e} ≫ T{sub i}. We have studied the dispersion of these waves and present the numeric simulation of their dispersion properties.
NASA Astrophysics Data System (ADS)
Xia, Mingjun; Ghafouri-Shiraz, H.
2016-04-01
This paper studies the strain (i.e. compressive (CS) and tensile (TS)) effects on the dynamic spectra of an amplified femtosecond pulse in a quantum well semiconductor optical amplifier (QW-SOA) using quantum well transmission line modelling (QW-TLM) method. Based on the analysis of band structure, the gain spectrum as well as the spontaneous spectrum of quantum well (QW) in the CS, unstrained (US) and TS are investigated using QW-TLM and it was found that in the CS QW, the magnitude ratio of the gain spectrum and the spontaneous emission spectrum is the largest. Furthermore, QW-TLM is adopted to investigate the dynamic spectral evolution of femtosecond pulse amplification in QW-SOAs and it was found that as the femtosecond pulse approaches the amplifier output, the centre frequency of the amplified femtosecond pulse spectra decreases and its bandwidth decreases. The output spectra of the amplified femtosecond pulse in QW amplifiers under the CS, US and TS cases are compared and the simulation results show that in a CS QW-SOA the spectral shape exhibits the largest magnitude and the smallest fluctuation due to the largest gain and the largest ratio between the gain and noise.
The diamagnetic susceptibility of a donor in a semiconductor core shell quantum dot
Sudharshan, M. S.; Subhash, P.; Shaik, Nagoor Babu; Kalpana, P.; Jayakumar, K.; Reuben, A. Merwyn Jasper D.
2015-06-24
The effect of Aluminium concentration, shell thickness and size of the core shell Quantum Dot on the Diamagnetic Susceptibility of a donor in the Core Shell Quantum Dot is calculated in the effective mass approximation using the variational method. The results are presented and discussed.
Madelung and Hubbard interactions in polaron band model of doped organic semiconductors.
Png, Rui-Qi; Ang, Mervin C Y; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K H
2016-01-01
The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π-π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine-fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime. PMID:27582355
Madelung and Hubbard interactions in polaron band model of doped organic semiconductors
NASA Astrophysics Data System (ADS)
Png, Rui-Qi; Ang, Mervin C. Y.; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K. H.
2016-09-01
The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π-π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine-fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime.
Madelung and Hubbard interactions in polaron band model of doped organic semiconductors
Png, Rui-Qi; Ang, Mervin C.Y.; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K.H.
2016-01-01
The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π–π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine–fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime. PMID:27582355
Madelung and Hubbard interactions in polaron band model of doped organic semiconductors.
Png, Rui-Qi; Ang, Mervin C Y; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K H
2016-09-01
The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π-π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine-fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime.
Universality of spectra for interacting quantum chaotic systems.
Bruzda, Wojciech; Smaczyński, Marek; Cappellini, Valerio; Sommers, Hans-Jürgen; Zyczkowski, Karol
2010-06-01
We analyze a model quantum dynamical system subjected to periodic interaction with an environment, which can describe quantum measurements. Under the condition of strong classical chaos and strong decoherence due to large coupling with the measurement device, the spectra of the evolution operator exhibit an universal behavior. A generic spectrum consists of a single eigenvalue equal to unity, which corresponds to the invariant state of the system, while all other eigenvalues are contained in a disk in the complex plane. Its radius depends on the number of the Kraus measurement operators and determines the speed with which an arbitrary initial state converges to the unique invariant state. These spectral properties are characteristic of an ensemble of random quantum maps, which in turn can be described by an ensemble of real random Ginibre matrices. This will be proven in the limit of large dimension.
Universality of spectra for interacting quantum chaotic systems
NASA Astrophysics Data System (ADS)
Bruzda, Wojciech; Smaczyński, Marek; Cappellini, Valerio; Sommers, Hans-Jürgen; Życzkowski, Karol
2010-06-01
We analyze a model quantum dynamical system subjected to periodic interaction with an environment, which can describe quantum measurements. Under the condition of strong classical chaos and strong decoherence due to large coupling with the measurement device, the spectra of the evolution operator exhibit an universal behavior. A generic spectrum consists of a single eigenvalue equal to unity, which corresponds to the invariant state of the system, while all other eigenvalues are contained in a disk in the complex plane. Its radius depends on the number of the Kraus measurement operators and determines the speed with which an arbitrary initial state converges to the unique invariant state. These spectral properties are characteristic of an ensemble of random quantum maps, which in turn can be described by an ensemble of real random Ginibre matrices. This will be proven in the limit of large dimension.
TRIQS: A toolbox for research on interacting quantum systems
NASA Astrophysics Data System (ADS)
Parcollet, Olivier; Ferrero, Michel; Ayral, Thomas; Hafermann, Hartmut; Krivenko, Igor; Messio, Laura; Seth, Priyanka
2015-11-01
We present the TRIQS library, a Toolbox for Research on Interacting Quantum Systems. It is an open-source, computational physics library providing a framework for the quick development of applications in the field of many-body quantum physics, and in particular, strongly-correlated electronic systems. It supplies components to develop codes in a modern, concise and efficient way: e.g. Green's function containers, a generic Monte Carlo class, and simple interfaces to HDF5. TRIQS is a C++/Python library that can be used from either language. It is distributed under the GNU General Public License (GPLv3). State-of-the-art applications based on the library, such as modern quantum many-body solvers and interfaces between density-functional-theory codes and dynamical mean-field theory (DMFT) codes are distributed along with it.
Kondo and Majorana doublet interactions in quantum dots
NASA Astrophysics Data System (ADS)
Kim, Younghyun; Liu, Dong E.; Gaidamauskas, Erikas; Paaske, Jens; Flensberg, Karsten; Lutchyn, Roman
We study the properties of a quantum dot coupled to a normal lead and a time-reversal topological superconductor with Majorana Kramers pair at the end. We explore the phase diagram of the system as a function of Kondo and Majorana-induced coupling strengths using perturbative renormalization group study and slave-boson mean-field theory. We find that, in the presence of coupling between a quantum dot and a Majorana doublet, the system flows to a new fixed point controlled by the Majorana doublet, rather than the Kondo coupling, which is characterized by correlations between a localized spin and the fermion parity of each spin sector of the topological superconductor. We find that this fixed point is stable with respect to Gaussian fluctuations. We also investigate the effect of spin-spin interaction between a quantum dot and Majorana doublet and compare the result with a case where a normal lead is directly coupled to Majorana doublet.
TRIQS: A toolbox for research on interacting quantum systems
NASA Astrophysics Data System (ADS)
Parcollet, Olivier; Ferrero, Michel; Ayral, Thomas; Hafermann, Hartmut; Krivenko, Igor; Messio, Laura; Seth, Priyanka
2015-11-01
We present the TRIQS library, a Toolbox for Research on Interacting Quantum Systems. It is an open-source, computational physics library providing a framework for the quick development of applications in the field of many-body quantum physics, and in particular, strongly-correlated electronic systems. It supplies components to develop codes in a modern, concise and efficient way: e.g. Green's function containers, a generic Monte Carlo class, and simple interfaces to HDF5. TRIQS is a C++/Python library that can be used from either language. It is distributed under the GNU General Public License (GPLv3). State-of-the-art applications based on the library, such as modern quantum many-body solvers and interfaces between density-functional-theory codes and dynamical mean-field theory (DMFT) codes are distributed along with it.
Emergence of competing magnetic interactions induced by Ge doping in the semiconductor FeGa3
NASA Astrophysics Data System (ADS)
Alvarez-Quiceno, J. C.; Cabrera-Baez, M.; Ribeiro, R. A.; Avila, M. A.; Dalpian, G. M.; Osorio-Guillén, J. M.
2016-07-01
FeGa3 is an unusual intermetallic semiconductor that presents intriguing magnetic responses to the tuning of its electronic properties. When doped with Ge, the system evolves from diamagnetic to paramagnetic to ferromagnetic ground states that are not well understood. In this work, we have performed a joint theoretical and experimental study of FeGa3 -xGex using density functional theory and magnetic susceptibility measurements. For low Ge concentrations we observe the formation of localized moments on some Fe atoms and, as the dopant concentration increases, a more delocalized magnetic behavior emerges. The magnetic configuration strongly depends on the dopant distribution, leading even to the appearance of antiferromagnetic interactions in certain configurations.
NASA Astrophysics Data System (ADS)
Barseghyan, M. G.; Duque, C. A.; Niculescu, E. C.; Radu, A.
2014-02-01
We study the laser field effects on the intersubband optical absorption and the refractive index changes in a GaAs/AlGaAs quantum wire with equilateral triangle cross section. The wire is under the action of a laser beam which is assumed to be non-resonant with the semiconductor structure and linearly polarized perpendicularly to the triangle side. In the effective mass approximation and for a finite potential barrier we calculate the subband states by using a finite element method. Linear, non linear and total absorption coefficients and refractive index changes are calculated as functions of the laser field for the allowed intersubband transitions. Two polarizations of the pump radiation, parallel and perpendicular to the laser field direction, are discussed.
Rizvi, Sarwat B.; Ghaderi, Shirin; Keshtgar, Mo; Seifalian, Alexander M.
2010-01-01
Over the years, biological imaging has seen many advances, allowing scientists to unfold many of the mysteries surrounding biological processes. The ideal imaging resolution would be in nanometres, as most biological processes occur at this scale. Nanotechnology has made this possible with functionalised nanoparticles that can bind to specific targets and trace processes at the cellular and molecular level. Quantum dots (QDs) or semiconductor nanocrystals are luminescent particles that have the potential to be the next generation fluorophores. This paper is an overview of the basics of QDs and their role as fluorescent probes for various biological imaging applications. Their potential clinical applications and the limitations that need to be overcome have also been discussed. PMID:22110865
Zeghuzi, A. Schmeckebier, H.; Stubenrauch, M.; Bimberg, D.; Meuer, C.; Schubert, C.; Bunge, C.-A.
2015-05-25
Error-free generation of 25-Gbit/s differential phase-shift keying (DPSK) signals via direct modulation of InAs quantum-dot (QD) based semiconductor optical amplifiers (SOAs) is experimentally demonstrated with an input power level of −5 dBm. The QD SOAs emit in the 1.3-μm wavelength range and provide a small-signal fiber-to-fiber gain of 8 dB. Furthermore, error-free DPSK modulation is achieved for constant optical input power levels from 3 dBm down to only −11 dBm for a bit rate of 20 Gbit/s. Direct phase modulation of QD SOAs via current changes is thus demonstrated to be much faster than direct gain modulation.
NASA Astrophysics Data System (ADS)
Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.; Asryan, L. V.
2016-08-01
A model for calculating the operating characteristics of semiconductor quantum well (QW) lasers is presented. The model exploits the condition of global electroneutrality, which includes the charge carriers both in the two-dimensional (2D) active region (QW) and bulk waveguide region (optical confinement layer - OCL). The charge of each sign in the OCL is shown to be significantly larger than that in the QW. As a result of this, (i) the global electroneutrality condition reduces to the condition of electroneutrality in the OCL and (ii) the local electroneutrality in the QW can be strongly violated, i.e., the 2D electron and hole densities in the QW can significantly differ from each other.
NASA Astrophysics Data System (ADS)
Kim, Jungho
2013-10-01
We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.
Liu, Shaopeng; Yang, Wen-Xing; Chuang, You-Lin; Chen, Ai-Xi; Liu, Ang; Huang, Yan; Lee, Ray-Kuang
2014-11-17
We propose and analyze an efficient way to enhance four-wave mixing (FWM) signals in a four-subband semiconductor quantum well via Fano-type interference. By using Schrödinger-Maxwell formalism, we derive explicitly analytical expressions for the input probe pulse and the generated FWM field in linear regime under the steady-state condition. With the aid of interference between two excited subbands tunneling to the common continuum, the efficiency to generate FWM field is found to be significantly enhanced, up to 35%. More interestingly, a linear growth rate in the FWM efficiency is demonstrated as the strength of Fano-type interference increases in presence of the continuum states, which can be maintained for a certain propagation distance (i.e., 50μm).
NASA Astrophysics Data System (ADS)
Zhou, Y.; Yu, T.; Wu, M. W.
2013-06-01
We report an anomalous scaling of the D’yakonov-Perel’ spin relaxation with the momentum relaxation in semiconductor quantum wells under a strong magnetic field in the Voigt configuration. We focus on the case in which the external magnetic field is perpendicular to the spin-orbit-coupling-induced effective magnetic field and its magnitude is much larger than the latter one. It is found that the longitudinal spin relaxation time is proportional to the momentum relaxation time even in the strong-scattering limit, indicating that the D’yakonov-Perel’ spin relaxation demonstrates Elliott-Yafet-like behavior. Moreover, the transverse spin relaxation time is proportional (inversely proportional) to the momentum relaxation time in the strong- (weak-) scattering limit, both in the opposite trends against the well-established conventional D’yakonov-Perel’ spin relaxation behaviors. We further demonstrate that all the above anomalous scaling relations come from the unique form of the effective inhomogeneous broadening.
Massey, Melissa; Wu, Miao; Conroy, Erin M; Algar, W Russ
2015-08-01
Semiconductor quantum dots (QDs) and semiconducting polymer nanoparticles (Pdots) are brightly emissive materials that offer many advantages for bioanalysis and bioimaging, and are complementary to revolutionary advances in fluorescence technology. Within the context of biological applications, this review compares the evolution and different stages of development of these two types of nanoparticle, and addresses current perceptions about QDs. Although neither material is a wholesale replacement for fluorescent dyes, recent trends have demonstrated that both types of nanoparticle can excel in applications that are often too demanding for fluorescent dyes alone. Examples discussed in this review include single particle tracking and imaging, multicolor imaging and multiplexed detection, biosensing, point-of-care diagnostics, in vivo imaging and drug delivery.
Quantum chaos and thermalization in isolated systems of interacting particles
NASA Astrophysics Data System (ADS)
Borgonovi, F.; Izrailev, F. M.; Santos, L. F.; Zelevinsky, V. G.
2016-04-01
This review is devoted to the problem of thermalization in a small isolated conglomerate of interacting constituents. A variety of physically important systems of intensive current interest belong to this category: complex atoms, molecules (including biological molecules), nuclei, small devices of condensed matter and quantum optics on nano- and micro-scale, cold atoms in optical lattices, ion traps. Physical implementations of quantum computers, where there are many interacting qubits, also fall into this group. Statistical regularities come into play through inter-particle interactions, which have two fundamental components: mean field, that along with external conditions, forms the regular component of the dynamics, and residual interactions responsible for the complex structure of the actual stationary states. At sufficiently high level density, the stationary states become exceedingly complicated superpositions of simple quasiparticle excitations. At this stage, regularities typical of quantum chaos emerge and bring in signatures of thermalization. We describe all the stages and the results of the processes leading to thermalization, using analytical and massive numerical examples for realistic atomic, nuclear, and spin systems, as well as for models with random parameters. The structure of stationary states, strength functions of simple configurations, and concepts of entropy and temperature in application to isolated mesoscopic systems are discussed in detail. We conclude with a schematic discussion of the time evolution of such systems to equilibrium.
Quantum interactions with closed timelike curves and superluminal signaling
NASA Astrophysics Data System (ADS)
Bub, Jeffrey; Stairs, Allen
2014-02-01
There is now a significant body of results on quantum interactions with closed timelike curves (CTCs) in the quantum information literature, for both the Deutsch model of CTC interactions (D-CTCs) and the projective model (P-CTCs). As a consequence, there is a prima facie argument exploiting entanglement that CTC interactions would enable superluminal and, indeed, effectively instantaneous signaling. In cases of spacelike separation between the sender of a signal and the receiver, whether a receiver measures the local part of an entangled state or a disentangled state to access the signal can depend on the reference frame. We propose a consistency condition that gives priority to either an entangled perspective or a disentangled perspective in spacelike-separated scenarios. For D-CTC interactions, the consistency condition gives priority to frames of reference in which the state is disentangled, while for P-CTC interactions the condition selects the entangled state. Using the consistency condition, we show that there is a procedure that allows Alice to signal to Bob in the past via relayed superluminal communications between spacelike-separated Alice and Clio, and spacelike-separated Clio and Bob. This opens the door to time travel paradoxes in the classical domain. Ralph [T. C. Ralph, arXiv:1107.4675 [quant-ph].] first pointed this out for P-CTCs, but we show that Ralph's procedure for a "radio to the past" is flawed. Since both D-CTCs and P-CTCs allow classical information to be sent around a spacetime loop, it follows from a result by Aaronson and Watrous [S. Aaronson and J. Watrous, Proc. R. Soc. A 465, 631 (2009), 10.1098/rspa.2008.0350] for CTC-enhanced classical computation that a quantum computer with access to P-CTCs would have the power of PSPACE, equivalent to a D-CTC-enhanced quantum computer.
Quantum corrections to the gravitational interaction of massless particles
NASA Astrophysics Data System (ADS)
Blackburn, Thomas J., Jr.
Donoghue's effective field theory of quantum gravity is extended to include the interaction of massless particles. The collinear divergences which accompany massless particles are examined first in the context of QED and then in quantum gravity. A result of Weinberg is extended to show how these divergences vanish in the case of gravity. The scattering cross section for hypothetical massless scalar particles is computed first, because it is simpler, and the results are then extended to photons. Some terms in the cross section are shown to correspond to the Aichelburg-Sexl metric surrounding a massless particle and to quantum corrections to that metric. The scattering cross section is also applied to calculate quantum corrections to the bending of starlight, and though small, the result obtained is qualitatively different than in the classical case. Since effective field theory includes the low-energy degrees of freedom which generate collinear divergences, the results presented here will remain relevant in any future quantum theory of gravity.
NASA Astrophysics Data System (ADS)
Boyle, C.; Sigler, C.; Kirch, J. D.; Lindberg, D.; Earles, T.; Botez, D.; Mawst, L. J.
2016-03-01
Grating-coupled, surface-emitting (GCSE) quantum-cascade lasers (QCLs) are demonstrated with high-power, single-lobe surface emission. A 2nd-order Au-semiconductor distributed-feedback (DFB)/ distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric longitudinal mode by causing resonant coupling of the guided optical mode to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. In turn, the antisymmetric longitudinal modes are strongly absorbed by the metal in the grating, causing the symmetric longitudinal mode to be favored to lase, which produces a single lobe beam over a grating duty-cycle range of 36-41 %. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of residual reflections from the device's cleaved ends. Peak pulsed output powers of ~ 0.4 W were measured with single-lobe, single-mode operation near 4.75 μm.
De Liberato, Simone; Ciuti, Cristiano; Carusotto, Iacopo
2007-03-09
We develop a general theory of the quantum vacuum radiation generated by an arbitrary time modulation of the vacuum Rabi frequency of an intersubband transition in a doped quantum well system embedded in a planar microcavity. Both nonradiative and radiative losses are included within an input-output quantum Langevin framework. The intensity and the spectral signatures of the extra-cavity emission are characterized versus the modulation properties. For realistic parameters, the photon pair emission is predicted to largely exceed the blackbody radiation in the mid and far infrared. For strong and resonant modulation a parametric oscillation regime is achievable.
The use of bulk states to accelerate the band edge statecalculation of a semiconductor quantum dot
Vomel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques,Osni A.; Dongarra, Jack J.
2006-05-10
We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations.
Application of terahertz quantum-cascade lasers to semiconductor cyclotron resonance.
Larrabee, Diane C; Khodaparast, Giti A; Tittel, Frank K; Kono, Jun; Scalari, Giacomo; Ajili, Lassaad; Faist, Jerome; Beere, Harvey; Davies, Giles; Linfield, Edmund; Ritchie, David; Nakajima, Yoji; Nakai, Masato; Sasa, Shigehiko; Inoue, Masataka; Chung, Seokjae; Santos, Michael B
2004-01-01
Quantum-cascade lasers operating at 4.7, 3.5, and 2.3 THz have been used to achieve cyclotron resonance in InAs and InSb quantum wells from liquid-helium temperatures to room temperature. This represents one of the first spectroscopic applications of terahertz quantum-cascade lasers. Results show that these compact lasers are convenient and reliable sources with adequate power and stability for this type of far-infrared magneto-optical study of solids. Their compactness promises interesting future applications in solid-state spectroscopy.
Application of terahertz quantum-cascade lasers to semiconductor cyclotron resonance
NASA Astrophysics Data System (ADS)
Larrabee, Diane C.; Khodaparast, Giti A.; Tittel, Frank K.; Kono, Jun; Scalari, Giacomo; Ajili, Lassaad; Faist, Jerome; Beere, Harvey; Davies, Giles; Linfield, Edmund; Ritchie, David; Nakajima, Yoji; Nakai, Masato; Sasa, Shigehiko; Inoue, Masataka; Chung, Seokjae; Santos, Michael B.
2004-01-01
Quantum-cascade lasers operating at 4.7, 3.5, and 2.3 THz have been used to achieve cyclotron resonance in InAs and InSb quantum wells from liquid-helium temperatures to room temperature. This represents one of the first spectroscopic applications of terahertz quantum-cascade lasers. Results show that these compact lasers are convenient and reliable sources with adequate power and stability for this type of far-infrared magneto-optical study of solids. Their compactness promises interesting future applications in solid-state spectroscopy.
Quantum Phenomena Modeled by Interactions between Many Classical Worlds
NASA Astrophysics Data System (ADS)
Hall, Michael J. W.; Deckert, Dirk-André; Wiseman, Howard M.
2014-10-01
We investigate whether quantum theory can be understood as the continuum limit of a mechanical theory, in which there is a huge, but finite, number of classical "worlds," and quantum effects arise solely from a universal interaction between these worlds, without reference to any wave function. Here, a "world" means an entire universe with well-defined properties, determined by the classical configuration of its particles and fields. In our approach, each world evolves deterministically, probabilities arise due to ignorance as to which world a given observer occupies, and we argue that in the limit of infinitely many worlds the wave function can be recovered (as a secondary object) from the motion of these worlds. We introduce a simple model of such a "many interacting worlds" approach and show that it can reproduce some generic quantum phenomena—such as Ehrenfest's theorem, wave packet spreading, barrier tunneling, and zero-point energy—as a direct consequence of mutual repulsion between worlds. Finally, we perform numerical simulations using our approach. We demonstrate, first, that it can be used to calculate quantum ground states, and second, that it is capable of reproducing, at least qualitatively, the double-slit interference phenomenon.
Quantum phenomena modelled by interactions between many classical worlds
NASA Astrophysics Data System (ADS)
Wiseman, Howard; Hall, Michael; Deckert, Dirk-Andre
2015-03-01
We investigate how quantum theory can be understood as the continuum limit of a mechanical theory, in which there is a huge, but countable, number of classical ``worlds,'' and quantum effects arise solely from a universal interaction between these worlds, without reference to any wave function. Here a ``world'' means an entire universe with well-defined properties, determined by the classical configuration of its particles and fields. In our approach each world evolves deterministically; probabilities arise due to ignorance as to which world a given observer occupies; and we argue that in the limit of infinitely many worlds the wave function can be recovered (as a secondary object) from the motion of these worlds. We introduce a simple model of such a ``many interacting worlds'' approach and show that it can reproduce some generic quantum phenomena-such as Ehrenfest's theorem, wavepacket spreading, barrier tunneling and zero point energy-as a direct consequence of mutual repulsion between worlds. Finally, we perform numerical simulations using our approach. We demonstrate, first, that it can be used to calculate quantum ground states, and second, that it is capable of reproducing, at least qualitatively, the double-slit interference phenomenon.
Interacting Electrodynamics of Short Coherent Conductors in Quantum Circuits
NASA Astrophysics Data System (ADS)
Altimiras, C.; Portier, F.; Joyez, P.
2016-07-01
When combining lumped mesoscopic electronic components to form a circuit, quantum fluctuations of electrical quantities lead to a nonlinear electromagnetic interaction between the components, which is generally not understood. The Landauer-Büttiker formalism that is frequently used to describe noninteracting coherent mesoscopic components is not directly suited to describe such circuits since it assumes perfect voltage bias, i.e., the absence of fluctuations. Here, we show that for short coherent conductors of arbitrary transmission, the Landauer-Büttiker formalism can be extended to take into account quantum voltage fluctuations similarly to what is done for tunnel junctions. The electrodynamics of the whole circuit is then formally worked out disregarding the non-Gaussianity of fluctuations. This reveals how the aforementioned nonlinear interaction operates in short coherent conductors: Voltage fluctuations induce a reduction of conductance through the phenomenon of dynamical Coulomb blockade, but they also modify their internal density of states, leading to an additional electrostatic modification of the transmission. Using this approach, we can quantitatively account for conductance measurements performed on quantum point contacts in series with impedances of the order of RK=h /e2 . Our work should enable a better engineering of quantum circuits with targeted properties.
Chen, Hua-Jun; Zhu, Ka-Di
2015-01-01
In the present work, we theoretically propose an optical scheme to detect the possible signature of Majorana fermions via the optical pump-probe spectroscopy, which is very different from the current tunneling measurement based on electrical methods. The scheme consists of a metal nanoparticle and a semiconductor quantum dot coupled to a hybrid semiconductor/superconductor heterostructures. The results show that the probe absorption spectrum of the quantum dot presents a distinct splitting due to the existence of Majorana fermions. Owing to surface plasmon enhanced effect, this splitting will be more obvious, which makes Majorana fermions more easy to be detectable. The technique proposed here open the door for new applications ranging from robust manipulation of Majorana fermions to quantum information processing based on Majorana fermions. PMID:26310929
Hu, Michael Z.; Zhu, Ting
2015-12-04
This study reviews the experimental synthesis and engineering developments that focused on various green approaches and large-scale process production routes for quantum dots. Fundamental process engineering principles were illustrated. In relation to the small-scale hot injection method, our discussions focus on the non-injection route that could be scaled up with engineering stir-tank reactors. In addition, applications that demand to utilize quantum dots as "commodity" chemicals are discussed, including solar cells and solid-state lightings.
Antenna-load interactions at optical frequencies: impedance matching to quantum systems.
Olmon, R L; Raschke, M B
2012-11-01
The goal of antenna design at optical frequencies is to deliver optical electromagnetic energy to loads in the form of, e.g., atoms, molecules or nanostructures, or to enhance the radiative emission from such structures, or both. A true optical antenna would, on a qualitatively new level, control the light-matter interaction on the nanoscale for controlled optical signal transduction, radiative decay engineering, quantum coherent control, and super-resolution microscopy, and provide unprecedented sensitivity in spectroscopy. Resonant metallic structures have successfully been designed to approach these goals. They are called optical antennas in analogy to radiofrequency (RF) antennas due to their capability to collect and control electromagnetic fields at optical frequencies. However, in contrast to the RF, where exact design rules for antennas, waveguides, and antenna-load matching in terms of their impedances are well established, substantial physical differences limit the simple extension of the RF concepts into the optical regime. Key distinctions include, for one, intrinsic material resonances including quantum state excitations (metals, metal oxides, semiconductor homo- and heterostructures) and extrinsic resonances (surface plasmon/phonon polaritons) at optical frequencies. Second, in the absence of discrete inductors, capacitors, and resistors, new design strategies must be developed to impedance match the antenna to the load, ultimately in the form of a vibrational, electronic, or spin excitation on the quantum level. Third, there is as yet a lack of standard performance metrics for characterizing, comparing and quantifying optical antenna performance. Therefore, optical antenna development is currently challenged at all the levels of design, fabrication, and characterization. Here we generalize the ideal antenna-load interaction at optical frequencies, characterized by three main steps: (i) far-field reception of a propagating mode exciting an antenna
Antenna-load interactions at optical frequencies: impedance matching to quantum systems
NASA Astrophysics Data System (ADS)
Olmon, R. L.; Raschke, M. B.
2012-11-01
The goal of antenna design at optical frequencies is to deliver optical electromagnetic energy to loads in the form of, e.g., atoms, molecules or nanostructures, or to enhance the radiative emission from such structures, or both. A true optical antenna would, on a qualitatively new level, control the light-matter interaction on the nanoscale for controlled optical signal transduction, radiative decay engineering, quantum coherent control, and super-resolution microscopy, and provide unprecedented sensitivity in spectroscopy. Resonant metallic structures have successfully been designed to approach these goals. They are called optical antennas in analogy to radiofrequency (RF) antennas due to their capability to collect and control electromagnetic fields at optical frequencies. However, in contrast to the RF, where exact design rules for antennas, waveguides, and antenna-load matching in terms of their impedances are well established, substantial physical differences limit the simple extension of the RF concepts into the optical regime. Key distinctions include, for one, intrinsic material resonances including quantum state excitations (metals, metal oxides, semiconductor homo- and heterostructures) and extrinsic resonances (surface plasmon/phonon polaritons) at optical frequencies. Second, in the absence of discrete inductors, capacitors, and resistors, new design strategies must be developed to impedance match the antenna to the load, ultimately in the form of a vibrational, electronic, or spin excitation on the quantum level. Third, there is as yet a lack of standard performance metrics for characterizing, comparing and quantifying optical antenna performance. Therefore, optical antenna development is currently challenged at all the levels of design, fabrication, and characterization. Here we generalize the ideal antenna-load interaction at optical frequencies, characterized by three main steps: (i) far-field reception of a propagating mode exciting an antenna
Interaction driven quantum Hall effect in artificially stacked graphene bilayers.
Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa
2016-01-01
The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers. PMID:27098387
Interaction driven quantum Hall effect in artificially stacked graphene bilayers
Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa
2016-01-01
The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers. PMID:27098387
Electron Transfer as a Probe of the Interfacial Quantum Dot-Organic Molecule Interaction
NASA Astrophysics Data System (ADS)
Peterson, Mark D.
This dissertation describes a set of experimental and theoretical studies of the interaction between small organic molecules and the surfaces of semiconductor nanoparticles, also called quantum dots (QDs). Chapter 1 reviews the literature on the influence of ligands on exciton relaxation dynamics following photoexcitation of semiconductor QDs, and describes how ligands promote or inhibit processes such as emission, nonradiative relaxation, and charge transfer to redox active adsorbates. Chapter 2 investigates the specific interaction of alkylcarboxylated viologen derivatives with CdS QDs, and shows how a combination of steady-state photoluminescence (PL) and transient absorption (TA) experiments can be used to reveal the specific binding geometry of redox active organic molecules on QD surfaces. Chapter 3 expands on Chapter 2 by using PL and TA to provide information about the mechanisms through which methyl viologen (MV 2+) associates with CdS QDs to form a stable QD/MV2+ complex, suggesting two chemically distinct reactions. We use our understanding of the QD/molecule interaction to design a drug delivery system in Chapter 4, which employs PL and TA experiments to show that conformational changes in a redox active adsorbate may follow electron transfer, "activating" a biologically inert Schiff base to a protein inhibitor form. The protein inhibitor limits cell motility and may be used to prevent tumor metastasis in cancer patients. Chapter 5 discusses future applications of QD/molecule redox couples with an emphasis on efficient multiple charge-transfer reactions -- a process facilitated by the high degeneracy of band-edge states in QDs. These multiple charge-transfer reactions may potentially increase the thermodynamic efficiency of solar cells, and may also facilitate the splitting of water into fuel. Multiple exciton generation procedures, multi-electron transfer experiments, and future directions are discussed.
Quantum dynamics and topological excitations in interacting dipolar particles
NASA Astrophysics Data System (ADS)
Rey, Ana
2016-05-01
Dipole-dipole interactions, long-range and anisotropic interactions that arise due to the virtual exchange of photons, are of fundamental importance in optical physics, and are enabling a range of new quantum technologies including quantum networks and optical lattice atomic clocks. In this talk I will first discuss how arrays of dipolar particles with a simple J = 0- J = 1 internal level structure can naturally host topological and chiral excitations including Weyl quasi-particles. Weyl fermions were first predicted to exist in the context of high energy physics but only recently have been observed in solid state systems. I will discuss a proposal of using Mott insulators of Sr atoms to observe and probe the Weyl excitation spectrum and its non-trivial chirality. Finally I will report on a recent experiment done at JILA which validates the underlying microscopic model that predicts the existence of these excitations. The experiment measured the collective emission from a coherently driven gas of ultracold 88 Sr atoms and observed a highly directional and anisotropic emission intensity and a substantial broadening of the atomic spectral lines. All of the measurements are well reproduced by the theoretical model. These investigations open the door for the exploration of novel quantum many-body systems involving strongly interacting atoms and photons, and are useful guides for further developments of optical atomic clocks and other applications involving dense atomic ensembles. AFOSR, MURI-AFOSR, ARO,NSF-PHY-1521080, JILA-NSF-PFC-1125844.
Simulations of two-particle interactions with 2D quantum walks in time
Schreiber, A.; Laiho, K.; Silberhorn, C.; Rohde, P. P.; Štefaňak, M.; Potoček, V.; Hamilton, C.; Jex, I.
2014-12-04
We present the experimental implementation of a quantum walk on a two-dimensional lattice and show how to employ the optical system to simulate the quantum propagation of two interacting particles. Our quantum walk in time transfers the spatial spread of a quantum walk into the time domain, which guarantees a high stability and scalability of the setup. We present with our device quantum walks over 12 steps on a 2D lattice. By changing the properties of the driving quantum coin, we investigate different kinds of two-particle interactions and reveal their impact on the occurring quantum propagation.
New Models of Magnetic Interactions for Bound Magnetic Polarons in Dilute Magnetic Semiconductors
NASA Astrophysics Data System (ADS)
McIntyre, Cynthia R.
The goal of the first part of this thesis is to develop a solvable model that better approximates the true exchange Hamiltonian of bound magnetic polarons (BMPs). The model replaces the single exchange constant (one-step) of the previous model by two exchange parameters (two-steps) of different coupling strengths. This formulation of the Hamiltonian breaks up some of the degeneracy of the one -step model. Determination of the relevant parameters is done using a Feynman (17) variational method. This method gives the optimal values for parameters in the model. A comparison of parameters, significant to the one-step model, using Feynman's variational method and a technique by Ryabchenko (14) will be presented. The second part of this thesis will focus on the effects of anisotropic exchange interaction, Dzyaloshinski (15) -Moriya (16) (DM) interaction, on the magnetization of the dilute magnetic semiconductors. Anisotropic exchange (DM) is the largest of the known non-spin conserving interactions. Because of its non-spin conserving property, anisotropic exchange is a probable mechanism for affecting the magnetization of Mn^{+2} pairs. Recent experimental research (22) on these materials has focused on the contribution of the DM interaction at the energy level crossings of Mn^{+2} pairs. We calculate the contribution of DM to the magnetization and compare to the linewidth of magnetization steps obtained from experiment. Also, we theoretically investigate the role of spin-lattice interactions on the relaxation of Mn^{+2} pairs and compare the theoretical time to the estimated experimental time (22). (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.) (Abstract shortened with permission of school.).
Selective interactions in trapped ions: State reconstruction and quantum logic
Solano, E.
2005-01-01
We propose the implementation of selective interactions of atom-motion subspaces in trapped ions. These interactions yield resonant exchange of population inside a selected subspace, leaving the others in a highly dispersive regime. Selectivity allows us to generate motional Fock (and other nonclassical) states with high purity out of a wide class of initial states, and becomes an unconventional cooling mechanism when the ground state is chosen. Individual population of number states can be distinctively measured, as well as the motional Wigner function. Furthermore, a protocol for implementing quantum logic through a suitable control of selective subspaces is presented.
A nonlinear Bloch model for Coulomb interaction in quantum dots
Bidegaray-Fesquet, Brigitte Keita, Kole
2014-02-15
In this paper, we first derive a Coulomb Hamiltonian for electron–electron interaction in quantum dots in the Heisenberg picture. Then we use this Hamiltonian to enhance a Bloch model, which happens to be nonlinear in the density matrix. The coupling with Maxwell equations in case of interaction with an electromagnetic field is also considered from the Cauchy problem point of view. The study is completed by numerical results and a discussion about the advisability of neglecting intra-band coherences, as is done in part of the literature.
Single step deposition of an interacting layer of a perovskite matrix with embedded quantum dots.
Ngo, Thi Tuyen; Suarez, Isaac; Sanchez, Rafael S; Martinez-Pastor, Juan P; Mora-Sero, Ivan
2016-08-14
Hybrid lead halide perovskite (PS) derivatives have emerged as very promising materials for the development of optoelectronic devices in the last few years. At the same time, inorganic nanocrystals with quantum confinement (QDs) possess unique properties that make them suitable materials for the development of photovoltaics, imaging and lighting applications, among others. In this work, we report on a new methodology for the deposition of high quality, large grain size and pinhole free PS films (CH3NH3PbI3) with embedded PbS and PbS/CdS core/shell Quantum Dots (QDs). The strong interaction between both semiconductors is revealed by the formation of an exciplex state, which is monitored by photoluminescence and electroluminescence experiments. The radiative exciplex relaxation is centered in the near infrared region (NIR), ≈1200 nm, which corresponds to lower energies than the corresponding band gap of both perovskite (PS) and QDs. Our approach allows the fabrication of multi-wavelength light emitting diodes (LEDs) based on a PS matrix with embedded QDs, which show considerably low turn-on potentials. The presence of the exciplex state of PS and QDs opens up a broad range of possibilities with important implications in both LEDs and solar cells. PMID:27437778
Quantum Monte Carlo Studies of Interaction-Induced Localization in Quantum Dots and Wires
NASA Astrophysics Data System (ADS)
Devrim Güçlü, A.
2009-03-01
We investigate interaction-induced localization of electrons in both quantum dots and inhomogeneous quantum wires using variational and diffusion quantum Monte Carlo methods. Quantum dots and wires are highly tunable systems that enable the study of the physics of strongly correlated electrons. With decreasing electronic density, interactions become stronger and electrons are expected to localize at their classical positions, as in Wigner crystallization in an infinite 2D system. (1) Dots: We show that the addition energy shows a clear progression from features associated with shell structure to those caused by commensurability of a Wigner crystal. This cross-over is, then, a signature of localization; it occurs near rs˜20. For higher values of rs, the configuration symmetry of the quantum dot becomes fully consistent with the classical ground state. (2) Wires: We study an inhomogeneous quasi-one-dimensional system -- a wire with two regions, one at low density and the other high. We find that strong localization occurs in the low density quantum point contact region as the gate potential is increased. The nature of the transition from high to low density depends on the density gradient -- if it is steep, a barrier develops between the two regions, causing Coulomb blockade effects. We find no evidence for ferromagnetic spin polarization for the range of parameters studied. The picture emerging here is in good agreement with the experimental measurements of tunneling between two wires. Collaborators: C. J. Umrigar (Cornell), Hong Jiang (Fritz Haber Institut), Amit Ghosal (IISER Calcutta), and H. U. Baranger (Duke).
NASA Astrophysics Data System (ADS)
Khadzhi, P. I.; Lyakhomskaya, K. D.; Nadkin, L. Y.; Markov, D. A.
2002-05-01
The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.
NASA Astrophysics Data System (ADS)
Hu, Guang-Xi; Liu, Ran; Qiu, Zhi-Jun; Wang, Ling-Li; Tang, Ting-Ao
2010-03-01
A model for a metal-oxide-semiconductor field-effect transistor (MOSFET) with a double gate (DG) is developed. Quantum mechanical effects on the threshold voltage (VTH) are modeled and investigated analytically. The analytic model shows how VTH is increased with quantum mechanical effect. The model is applicable to both symmetric DG (SDG) and asymmetric DG (ADG) nMOSFETs, and is also applicable to both doped and undoped DG nMOSFETs. The analytic results are verified by comparing with the results obtained from simulations using Schred, and good agreement is observed. The VTH of an ADG nMOSFET will shift more than that of an SDG nMOSFET, and the VTH of a DG transistor with (110)-silicon (Si) orientation will shift more than that of a DG transistor with (100)-Si orientation. When the silicon thickness tsi < 3 nm, the VTH shift will be significant, and one should be careful in the use of an extremely thin silicon body. When the body doping density (NA) is not high (<1018 cm-3), the VTH shift is almost the same for different NA. When NA > 1018 cm-3, the higher the NA, the more the VTH shift.
NASA Technical Reports Server (NTRS)
Collins, W. E.; Burger, A.; Dyer, K.; George, M.; Henderson, D.; Morgan, S.; Mu, R.; Shi, D.; Conner, D; Thompson, E.; Collins, L.; Curry, L.; Mattox, S.; Williams, G.
1996-01-01
Phase 1 of this work involved design work on a momentum transfer device. The progress on design and testing will be presented. Phase 2 involved the systematic study of the MPD thruster for dual uses. Though it was designed as a thruster for space vehicles, the characteristics of the plasma make it an excellent candidate for industrial applications. This project sought to characterize the system for use in materials processing and characterization. The surface modification on ZnCdTe, CdTe, and ZnTe will be presented. Phase 3 involved metal colloids and semiconductor quantum dots. One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantation for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga, and As. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb, and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. The results of some of this work will also be reported.
Coulomb interaction effects on the Majorana states in quantum wires.
Manolescu, A; Marinescu, D C; Stanescu, T D
2014-04-30
The stability of the Majorana modes in the presence of a repulsive interaction is studied in the standard semiconductor wire-metallic superconductor configuration. The effects of short-range Coulomb interaction, which is incorporated using a purely repulsive δ-function to model the strong screening effect due to the presence of the superconductor, are determined within a Hartree-Fock approximation of the effective Bogoliubov-De Gennes Hamiltonian that describes the low-energy physics of the wire. Through a numerical diagonalization procedure we obtain interaction corrections to the single particle eigenstates and calculate the extended topological phase diagram in terms of the chemical potential and the Zeeman energy. We find that, for a fixed Zeeman energy, the interaction shifts the phase boundaries to a higher chemical potential, whereas for a fixed chemical potential this shift can occur either at lower or higher Zeeman energies. These effects can be interpreted as a renormalization of the g-factor due to the interaction. The minimum Zeeman energy needed to realize Majorana fermions decreases with the increasing strength of the Coulomb repulsion. Furthermore, we find that in wires with multi-band occupancy this effect can be enhanced by increasing the chemical potential, i.e. by occupying higher energy bands. PMID:24722427
Topological phases and transport properties of screened interacting quantum wires
NASA Astrophysics Data System (ADS)
Xu, Hengyi; Xiong, Ye; Wang, Jun
2016-10-01
We study theoretically the effects of long-range and on-site Coulomb interactions on the topological phases and transport properties of spin-orbit-coupled quasi-one-dimensional quantum wires imposed on a s-wave superconductor. The distributions of the electrostatic potential and charge density are calculated self-consistently within the Hartree approximation. Due to the finite width of the wires and charge repulsion, the potential and density distribute inhomogeneously in the transverse direction and tend to accumulate along the lateral edges where the hard-wall confinement is assumed. This result has profound effects on the topological phases and the differential conductance of the interacting quantum wires and their hybrid junctions with superconductors. Coulomb interactions renormalize the gate voltage and alter the topological phases strongly by enhancing the topological regimes and producing jagged boundaries. Moreover, the multicritical points connecting different topological phases are modified remarkably in striking contrast to the predictions of the two-band model. We further suggest the possible non-magnetic topological phase transitions manipulated externally with the aid of long-range interactions. Finally, the transport properties of normal-superconductor junctions are further examined, in particular, the impacts of Coulomb interactions on the zero-bias peaks related to the Majorana fermions and near zero-energy peaks.
NASA Astrophysics Data System (ADS)
Li, Jingrui; Kondov, Ivan; Wang, Haobin; Thoss, Michael
2015-04-01
A recently developed methodology to simulate photoinduced electron transfer processes at dye-semiconductor interfaces is outlined. The methodology employs a first-principles-based model Hamiltonian and accurate quantum dynamics simulations using the multilayer multiconfiguration time-dependent Hartree approach. This method is applied to study electron injection in the dye-semiconductor system coumarin 343-TiO2. Specifically, the influence of electronic-vibrational coupling is analyzed. Extending previous work, we consider the influence of Dushinsky rotation of the normal modes as well as anharmonicities of the potential energy surfaces on the electron transfer dynamics.
Quantum chemical interaction energy surfaces of ethylene and propene dimers.
Jalkanen, Jukka-Pekka; Pulkkinen, Sallaraisa; Pakkanen, Tapani A; Rowley, Richard L
2005-03-31
Ab initio studies of nonbonding interactions for ethylene and propene dimers were conducted at the MP2/6-311+G(2df,2pd) level. The dimers were attractive in all of the orientations studied; however, the attraction was <0.1 kcal/mol for ethylene D2h and C2h dimers, for which the pi-electron clouds or H atoms interact closely. A previously introduced transferable potential model, NIPE [Jalkanen, J.-P.; Pakkanen, T. A.; Yang, Y.; Rowley, R. L. J. Chem. Phys. 2003, 118, 5474], which is based on quantum chemical calculations of small alkane molecules, was tested against the propene and ethylene dimer data. Comparisons of results showed that interaction energies for orientations dominated by interactions between the propene methyl groups or two hydrogens were accurately predicted with the NIPE model. Interactions involving the double bond were not predicted as well, because the original NIPE regression data set did not contain any information about pi-electron systems. An extension of the NIPE model to include pi-electron interactions is proposed. Additional interaction sites are used with the same energy function as atomic interactions. This addition provides a more accurate description of the interaction energies of both ethylene and propene and extends the transferability of the NIPE model to alkenes.
Quantum Monte Carlo calculations with chiral effective field theory interactions.
Gezerlis, A; Tews, I; Epelbaum, E; Gandolfi, S; Hebeler, K; Nogga, A; Schwenk, A
2013-07-19
We present the first quantum Monte Carlo (QMC) calculations with chiral effective field theory (EFT) interactions. To achieve this, we remove all sources of nonlocality, which hamper the inclusion in QMC calculations, in nuclear forces to next-to-next-to-leading order. We perform auxiliary-field diffusion Monte Carlo (AFDMC) calculations for the neutron matter energy up to saturation density based on local leading-order, next-to-leading order, and next-to-next-to-leading order nucleon-nucleon interactions. Our results exhibit a systematic order-by-order convergence in chiral EFT and provide nonperturbative benchmarks with theoretical uncertainties. For the softer interactions, perturbative calculations are in excellent agreement with the AFDMC results. This work paves the way for QMC calculations with systematic chiral EFT interactions for nuclei and nuclear matter, for testing the perturbativeness of different orders, and allows for matching to lattice QCD results by varying the pion mass.
Quantum mechanics of Drude oscillators with full Coulomb interaction
NASA Astrophysics Data System (ADS)
Sadhukhan, M.; Manby, Frederick R.
2016-09-01
Drude oscillators provide a harmonic description of charge fluctuations and are widely studied as a model system and for ab initio calculations. In the dipole approximation the Hamiltonian describing the interaction of Drudes is quadratic, so it can be diagonalized exactly, but the energy diverges at short range. Here we consider the quantum mechanics of Drude oscillators interacting through the full Coulombic Hamiltonian for which the interaction energy does not have this defect. This protypical model for interactions between matter includes electrostatics, induction, and dispersion. Potential energy curves for rare-gas dimers are very closely matched by Drude correlation energies plus a single exponential function. The exact and accurate results presented here help to delineate between the basic properties of the physical model and the effects that arise from the dipole approximation.
Manipulating coupling between a single semiconductor quantum dot and single gold nanoparticle.
Ratchford, Daniel; Shafiei, Farbod; Kim, Suenne; Gray, Stephen K; Li, Xiaoqin
2011-03-01
Using atomic force microscopy nanomanipulation, we position a single Au nanoparticle near a CdSe/ZnS quantum dot to construct a hybrid nanostructure with variable geometry. The coupling between the two particles is varied in a systematic and reversible manner. The photoluminescence lifetime and blinking of the same quantum dot are measured before and after assembly of the structure. In some hybrid structures, the total lifetime is reduced from about 30 ns to well below 1 ns. This dramatic change in lifetime is accompanied by the disappearance of blinking as the nonradiative energy transfer from the CdSe/ZnS quantum dot to the Au nanoparticle becomes the dominant decay channel. Both total lifetime and photoluminescence intensity changes are well described by simple analytical calculations.
Entanglement via tunable Fano-type interference in asymmetric semiconductor quantum wells
NASA Astrophysics Data System (ADS)
Hao, Xiangying; Li, Jiahua; Lv, Xin-You; Si, Liu-Gang; Yang, Xiaoxue
2009-10-01
Entanglement is realized in asymmetric coupled double quantum wells (DQWs) trapped in a doubly resonant cavity by means of Fano-type interference through a tunneling barrier, which is different from the previous studies on entanglement induced by strong external driven fields in atomic media. We investigate the generation and evolution of entanglement and show that the strength of Fano interference can influence effectively the degree of the entanglement between two cavity modes and the enhanced entanglement can be generated in this DQW system. The present investigation may provide research opportunities in quantum entangled experiments in the DQW solid-state nanostructures and may result in a substantial impact on the technology for entanglement engineering in quantum information processing.
NASA Astrophysics Data System (ADS)
Erwin, Steven; Ott, Florian; Norris, David
2014-03-01
Cation exchange is a reversible chemical reaction used to create new materials by replacing one type of cation with another, usually from solution. We have developed an atomistic model describing cation exchange in semiconductor nanocrystals. The model uses a small set of results obtained from DFT calculations for Ag-doped CdSe. From these we constructed a kinetic Monte Carlo model to address finite temperatures and time scales beyond the reach of DFT. Our simulations span a wide range of Ag concentrations, from light doping to full cation exchange. Thus our model provides a single conceptual framework in which these two phenomena can be understood as limiting endpoints. The results of the simulations are consistent with several experimentally observed aspects of both phenomena. An unexpected finding of our simulations is that the Coulomb interaction plays a central, but changing, role as the Ag concentration varies from light doping to fully cation exchanged. For example, if the Coulomb interaction is strongly screened then cation exchange is suppressed or stopped. When only moderately screened, Coulomb effects play an unanticipated but important role for both doping and cation exchange.
Chen, Lijia; Zhang, Qiaoming; Lei, Yanlian; Zhu, Furong; Wu, Bo; Zhang, Ting; Niu, Guoxi; Xiong, Zuhong; Song, Qunliang
2013-10-21
In this work, we report our effort to understand the photocurrent generation that is contributed via electron-exciton interaction at the donor/acceptor interface in organic solar cells (OSCs). Donor/acceptor bi-layer heterojunction OSCs, of the indium tin oxide/copper phthalocyanine (CuPc)/fullerene (C60)/molybdenum oxide/Al type, were employed to study the mechanism of photocurrent generation due to the electron-exciton interaction, where CuPc and C60 are the donor and the acceptor, respectively. It is shown that the electron-exciton interaction and the exciton dissociation processes co-exist at the CuPc/C60 interface in OSCs. Compared to conventional donor/acceptor bi-layer OSCs, the cells with the above configuration enable holes to be extracted at the C60 side while electrons can be collected at the CuPc side, resulting in a photocurrent in the reverse direction. The photocurrent thus observed is contributed to primarily by the charge carriers that are generated by the electron-exciton interaction at the CuPc/C60 interface, while charges derived from the exciton dissociation process also exist at the same interface. The mechanism of photocurrent generation due to electron-exciton interaction in the OSCs is further investigated, and it is manifested by the transient photovoltage characteristics and the external quantum efficiency measurements. PMID:24002235
Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure
NASA Astrophysics Data System (ADS)
Korenev, V. L.; Salewski, M.; Akimov, I. A.; Sapega, V. F.; Langer, L.; Kalitukha, I. V.; Debus, J.; Dzhioev, R. I.; Yakovlev, D. R.; Müller, D.; Schröder, C.; Hövel, H.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Kusrayev, Yu. G.; Bayer, M.
2016-01-01
Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wavefunction overlap and is therefore short-ranged, so that it may be compromised across the hybrid interface. Here we study a hybrid structure consisting of a ferromagnetic Co layer and a semiconducting CdTe quantum well, separated by a thin (Cd, Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wavefunction overlap of quantum well holes and magnetic atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 30 nm. We suggest that the resulting spin polarization of acceptor-bound holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.
Combining semiconductor quantum dots and bioscaffolds into nanoscale energy transfer devices.
Spillmann, Christopher M; Stewart, Michael H; Susumu, Kimihiro; Medintz, Igor L
2015-11-01
Significant advances have been made in the development of nanoscale devices capable of exciton transport via Förster resonance energy transfer. Several requirements must be met for effective operation, including a reliable energy-harvesting source along with highly organized, precisely placed energy relay elements. For the latter, biological scaffolds such as DNA provide a customizable, symmetric, and stable structure that can be site-specifically modified with organic fluorophores. Here, advancements in nanoscale energy transfer devices incorporating semiconductor nanocrystals and bioscaffolds are reviewed with discussion of biofunctionalization, linker chemistries, design considerations, and concluding with applications in light harvesting, multiplexed biosensing, and optical logic. PMID:26560627
Optical coefficients in a semiconductor quantum ring: Electric field and donor impurity effects
NASA Astrophysics Data System (ADS)
Duque, C. M.; Acosta, Ruben E.; Morales, A. L.; Mora-Ramos, M. E.; Restrepo, R. L.; Ojeda, J. H.; Kasapoglu, E.; Duque, C. A.
2016-10-01
The electron states in a two-dimensional quantum dot ring are calculated in the presence of a donor impurity atom under the effective mass and parabolic band approximations. The effect of an externally applied electric field is also taken into account. The wavefunctions are obtained via the exact diagonalization of the problem Hamiltonian using a 2D expansion within the adiabatic approximation. The impurity-related optical response is analyzed via the optical absorption, relative refractive index change and the second harmonics generation. The dependencies of the electron states and these optical coefficients with the changes in the configuration of the quantum ring system are discussed in detail.
Design of a semiconductor ferromagnet in a quantum-dot artificial crystal
Shiraishi, Kenji; Tamura, Hiroyuki; Takayanagi, Hideaki
2001-06-04
We present the theoretical design of quantum-dot (QD) artificial ferromagnetic crystals. The electronic structure calculations based on local spin density approximation show that our designed QD artificial crystal from a structure comprising the crossing 0.104 {mu}m wide InAs quantum wires (an effective Kagome lattice) has flat band characteristics. Our examined QD artificial crystal has the ferromagnetic ground state when the flat band is half filled, even though it contains no magnetic elements. The ferromagnetic and paramagnetic states can be freely switched by changing the electron filling via a gate voltage. {copyright} 2001 American Institute of Physics.
Quantum gas microscopy of the interacting Harper-Hofstadter system
NASA Astrophysics Data System (ADS)
Tai, M. Eric; Lukin, Alex; Preiss, Philipp; Rispoli, Matthew; Schittko, Robert; Kaufman, Adam; Greiner, Markus
2016-05-01
At the heart of many topological states is the underlying gauge field. One example of a gauge field is the magnetic field which causes the deflection of a moving charged particle. This behavior can be understood through the Aharonov-Bohm phase that a particle acquires upon traversing a closed path. Gauge fields give rise to novel states of matter that cannot be described with symmetry breaking. Instead, these states, e.g. fractional quantum Hall (FQH) states, are characterized by topological invariants, such as the Chern number. In this talk, we report on experimental results upon introducing a gauge field in a system of strongly-interacting ultracold Rb87 atoms confined to a 2D optical lattice. With single-site resolution afforded by a quantum gas microscope, we can prepare a fixed atom number and project hard walls. With an artificial gauge field, this quantum simulator realizes the Harper-Hofstadter Hamiltonian. We can independently control the two tunneling strengths as well as dynamically change the flux. This flexibility enables studies of topological phenomena from many perspectives, e.g. site-resolved images of edge currents. With the strong on-site interactions possible in our system, these experiments will pave the way to observing FQH-like states in a lattice.
ERIC Educational Resources Information Center
Niketic, Nemanja; Milanovic, Vitomir; Radovanovic, Jelena
2012-01-01
In this paper we provide a detailed analysis of the energy position and type of transmission maxima in rectangular quantum wells (QWs), taking into consideration the difference of electron effective masses in the barrier and well layers. Particular attention is given to transmission maxima that are less than unity and the implications of effective…
Quantum-tomographic cryptography with a semiconductor single-photon source
Kaszlikowski, D.; Yang, L.J.; Yong, L.S.; Willeboordse, F.H.; Kwek, L.C.
2005-09-15
We analyze the security of so-called quantum-tomographic cryptography with the source producing entangled photons via an experimental scheme proposed by Fattal et al. [Phys. Rev. Lett. 92, 37903 (2004)]. We determine the range of the experimental parameters for which the protocol is secure against the most general incoherent attacks.
Polarization-entangled mid-infrared photon generation in p-doped semiconductor quantum wells
NASA Astrophysics Data System (ADS)
Razali, R.; Ikonić, Z.; Indjin, D.; Harrison, P.
2016-11-01
The optimal design of double quantum well structures for generation of polarization-entangled photons in the mid-infrared range, based on the valence intersubband transitions spontaneous parametric downconversion, is considered. The efficiency and frequency selectivity of the process are also estimated.
Quantum constraint dynamics for two spinless particles under vector interaction
NASA Astrophysics Data System (ADS)
Crater, Horace W.; van Alstine, Peter
1984-12-01
Using Dirac's constraint mechanics we derive two-body Klein-Gordon equations for two spinless particles under mutual vector interaction. We construct generalized mass-shell constraints which incorporate the gauge structure of this interaction for the constituent particles. The resultant direct-interaction formalism does more than just dress static potentials with relativistic two-body kinematics. It includes dynamical recoil effects in the potential characteristic of those that appear in field theories. We demonstrate this classically by showing its canonical equivalence in the slow-motion, weak-potential domain (the semirelativistic approximation) to the Darwin Hamiltonian. We also show this quantum mechanically by demonstrating its equivalence (for weak potentials) to Todorov's homogeneous quasipotential equation (which in turn leads to the standard Breit results for perturbative QED). Not only is our one-body Schrödinger-type equation local and covariant, but also it leads to forms of interaction that make nonperturbative quantum-mechanical sense at short distances. Thus this constraint approach is ideally suited for use in phenomenological applications where a perturbative treatment may be inadequate (with no need for extra smoothing parameters or finite particle size).
Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles.
Tvrdy, Kevin; Frantsuzov, Pavel A; Kamat, Prashant V
2011-01-01
Quantum dot-metal oxide junctions are an integral part of next-generation solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO(2), TiO(2), and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO(2)) were not the same as those which showed the highest photocurrent (TiO(2)). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency.
A quantum mechanical polarizable force field for biomolecular interactions.
Donchev, A G; Ozrin, V D; Subbotin, M V; Tarasov, O V; Tarasov, V I
2005-05-31
We introduce a quantum mechanical polarizable force field (QMPFF) fitted solely to QM data at the MP2/aTZ(-hp) level. Atomic charge density is modeled by point-charge nuclei and floating exponentially shaped electron clouds. The functional form of interaction energy parallels quantum mechanics by including electrostatic, exchange, induction, and dispersion terms. Separate fitting of each term to the counterpart calculated from high-quality QM data ensures high transferability of QMPFF parameters to different molecular environments, as well as accurate fit to a broad range of experimental data in both gas and liquid phases. QMPFF, which is much more efficient than ab initio QM, is optimized for the accurate simulation of biomolecular systems and the design of drugs.
Xu, Liang; Huang, Wei-Qing; Wang, Ling-Ling; Huang, Gui-Fang
2014-11-26
The pursuit of superb building blocks of light harvesting systems has stimulated increasing efforts to develop graphene (GR)-based semiconductor composites for solar cells and photocatalysts. One critical issue for GR-based composites is understanding the interaction between their components, a problem that remains unresolved after intense experimental investigation. Here, we use cerium dioxide (CeO2) as a model semiconductor to systematically explore the interaction of semiconductor with GR and reduced graphene oxide (RGO) with large-scale ab initio calculations. The amount of charge transferred at the interfaces increases with the concentration of O atoms, demonstrating that the interaction between CeO2 and RGO is much stronger than that between CeO2 and GR due to the decrease of the average equilibrium distance between the interfaces. The stronger interaction between semiconductor and RGO is expected to be general, as evidenced by the results of two paradigms of TiO2 and Ag3PO4 coupled with RGO. The interfacial interaction can tune the band structure: the CeO2(111)/GR interface is a type-I heterojunction, while a type-II staggered band alignment exists between the CeO2(111) surface and RGO. The smaller band gap, type-II heterojunction, and negatively charged O atoms on the RGO as active sites are responsible for the enhanced photoactivity of CeO2/RGO composite. These findings can rationalize the available experimental reports and enrich our understanding of the interaction of GR-based composites for developing high-performance photocatalysts and solar cells.
NASA Astrophysics Data System (ADS)
Yamamoto, Takumi; Ota, Yasutomo; Ishida, Satomi; Kumagai, Naoto; Iwamoto, Satoshi; Arakawa, Yasuhiko
2016-08-01
We experimentally investigate the emission decay rates of self-assembled single InAs quantum dots (QDs) embedded in sub-wavelength semiconductor waveguides with and without metal side claddings. Compared with as-grown single QDs, we observe a clear suppression (enhancement) in the radiative decay rates of single InAs QDs embedded in the sub-wavelength semiconductor waveguides without (with) metal cladding, respectively. The decay rate for QDs in metal-clad waveguides is ∼2 times faster than that in waveguides without metal. Numerical calculations using models that include the effects of structural imperfections show good agreement with the experimental results, and reveal that the most important structural imperfection is the gap between the metal and the semiconductor.
Quantum capacitance modifies interionic interactions in semiconducting nanopores
NASA Astrophysics Data System (ADS)
Lee, Alpha A.; Vella, Dominic; Goriely, Alain
2016-02-01
Nanopores made with low-dimensional semiconducting materials, such as carbon nanotubes and graphene slit pores, are used in supercapacitors. For modelling purposes, it is often assumed that such pores screen ion-ion interactions like metallic pores, i.e. that screening leads to an exponential decay of the interaction potential with ion separation. By introducing a quantum capacitance that accounts for the density of states in the material, we show that ion-ion interactions in carbon nanotubes and graphene slit pores actually decay algebraically with ion separation. This result suggests a new avenue of capacitance optimization based on tuning the electronic structure of a pore: a marked enhancement in capacitance might be achieved by developing nanopores made with metallic materials or bulk semimetallic materials.
Enhanced nonlinear interactions in quantum optomechanics via mechanical amplification
NASA Astrophysics Data System (ADS)
Lemonde, Marc-Antoine; Didier, Nicolas; Clerk, Aashish A.
2016-04-01
The quantum nonlinear regime of optomechanics is reached when nonlinear effects of the radiation pressure interaction are observed at the single-photon level. This requires couplings larger than the mechanical frequency and cavity-damping rate, and is difficult to achieve experimentally. Here we show how to exponentially enhance the single-photon optomechanical coupling strength using only additional linear resources. Our method is based on using a large-amplitude, strongly detuned mechanical parametric drive to amplify mechanical zero-point fluctuations and hence enhance the radiation pressure interaction. It has the further benefit of allowing time-dependent control, enabling pulsed schemes. For a two-cavity optomechanical set-up, we show that our scheme generates photon blockade for experimentally accessible parameters, and even makes the production of photonic states with negative Wigner functions possible. We discuss how our method is an example of a more general strategy for enhancing boson-mediated two-particle interactions and nonlinearities.
Direct growth of CdSe semiconductor quantum dots in glass matrix by femtosecond laser beam
NASA Astrophysics Data System (ADS)
Bell, G.; Filin, A. I.; Romanov, D. A.; Levis, R. J.
2016-02-01
Controllable, spatially inhomogeneous distributions of CdSe nanocrystals smaller than the exciton Bohr radius are grown in a glass matrix under combined action of sample heating (below the transformation temperature) and focused high-repetition femtosecond (fs) laser beam. Selective quantum dot precipitation is evidenced by position-dependent absorption and Raman spectra. The particle size is estimated as r = 2.1 ± 0.3 nm by comparing the measured absorption and Raman spectra with those obtained from the samples grown in glass by traditional heat-treatment procedure. Direct growth of CdSe quantum dots in glass is enabled by nonlinear excitation using a focused fs duration laser beam (as differentiated from other methods), and this opens an avenue for adjustable selective growth patterns.
NASA Astrophysics Data System (ADS)
Daničić, A.; Radovanović, J.; Ramović, S.; Milanović, V.
2016-03-01
In order to avoid losses in metamaterial unit cells at frequencies of interest, caused by metallic inclusions, an active medium design has been proposed. As candidate structures for this active medium, we have chosen quantum cascade lasers because of their high output gain. Here we analyze and compare two quantum cascade structures that emit at 4.6 THz and 3.9 THz, respectively, placed under the influence of a strong magnetic field. We first solve the full system of rate equations for all relevant Landau levels, and obtain the necessary information about carrier distribution among the levels, after which we are able to evaluate the permittivity component along the growth direction of the structure. With these data one can determine the conditions under which negative refraction occurs, and calculate the values of the refractive index of the structure, as well as the range of frequencies at which the structure exhibits negative refraction for a predefined total electron sheet density.
Synthesis of Non-blinking Semiconductor Quantum Dots Emitting in the Near-Infrared
Dennis, Allison M.; Mangum, Benjamin D.; Piryatinski, Andrei; Park, Young-Shin; Htoon, Han; Hollingsworth, Jennifer A.
2012-06-21
Our previous work demonstrates that Quasi-Type II CdSe/CdS core-shell quantum dots with thick shells (3-5 nm) exhibit unique photophysical characteristics, including improved chemical robustness over typical thin-shelled core/shell systems and the elimination of blinking through suppression of nonradiative Auger recombination. Here we describe a new thick-shelled heterostructure, InP/CdS, which exhibits a Type II bandgap alignment producing near-infrared (NIR) emission. Samples with a range of shell thicknesses were synthesized, enabling shell-thickness-dependent study of the absorbance and emission spectra, fluorescence lifetimes, and quantum yields. InP/CdS/ZnS core/shell/shell structures were also synthesized to reduce cadmium exposure for applications in the biological environment. Single particle spectroscopy indicates reduced blinking and improved photostability with increasing shell thickness, resulting in thick-shelled dots that are appropriate for single-particle tracking measurements with NIR emission.
Frantsuzov, Pavel A; Volkán-Kacsó, Sándor; Jankó, Bolizsár
2009-11-13
We present a new physical model resolving a long-standing mystery of the power-law distributions of the blinking times in single colloidal quantum dot fluorescence. The model considers the nonradiative relaxation of the exciton through multiple recombination centers. Each center is allowed to switch between two quasistationary states. We point out that the conventional threshold analysis method used to extract the exponents of the distributions for the on times and off times has a serious flaw: the qualitative properties of the distributions strongly depend on the threshold value chosen for separating the on and off states. Our new model explains naturally this threshold dependence, as well as other key experimental features of the single quantum dot fluorescence trajectories, such as the power-law power spectrum (1/f noise).
Photon echo transients from an inhomogeneous ensemble of semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Poltavtsev, S. V.; Salewski, M.; Kapitonov, Yu. V.; Yugova, I. A.; Akimov, I. A.; Schneider, C.; Kamp, M.; Höfling, S.; Yakovlev, D. R.; Kavokin, A. V.; Bayer, M.
2016-03-01
An ensemble of quantum dot excitons may be used for coherent information manipulation. Due to the ensemble inhomogeneity any optical information retrieval occurs in the form of a photon echo. We show that the inhomogeneity can lead to a significant deviation from the conventional echo timing sequence. Variation of the area of the initial rotation pulse, which generates excitons in a dot subensemble only, reveals this complex picture of photon echo formation. We observe a retarded echo for π /2 pulses, while for 3 π /2 the echo is advanced in time as evidenced through monitoring the Rabi oscillations in the time-resolved photon echo amplitude from (In,Ga)As/GaAs self-assembled quantum dot structures and confirmed by detailed calculations.
Current Fluctuations in a Semiconductor Quantum Dot with Large Energy Spacing
NASA Astrophysics Data System (ADS)
Jeong, Heejun
2014-12-01
We report on the measurements of the current noise properties of electron tunneling through a split-gate GaAs quantum dot with large energy level spacing and a small number of electrons. Shot noise is full Poissonian or suppressed in the Coulomb-blockaded regime, while it is enhanced to show as super-Poissonian when an excited energy level is involved by finite source-drain bias. The results can be explained by multiple Poissonian processes through multilevel sequential tunneling.
Many-Body Effects and Lineshape of Intersubband Transitions in Semiconductor Quantum Wells
NASA Technical Reports Server (NTRS)
Ning, Cun-Zheng
2003-01-01
Intersubband Transition (ISBT) infrared (IR) absorption and PL in InAs/AlSb were studied for narrow Quantum Wells (QWs). A large redshift was observed (7-10 meV) as temperature increased. A comprehensive many-body theory was developed for ISBTs including contributions of c-c and c-phonon scatterings. Many-body effects were studied systematically for ISBTs. Redshift and linewidth dependence on temperature, as well as spectral features were well explained by theory.
Solution-liquid-solid growth of semiconductor quantum-wire films.
Wang, Fudong; Wayman, Virginia L; Loomis, Richard A; Buhro, William E
2011-06-28
We report the growth of cadmium-selenide (CdSe) quantum-wire (QW) films on a variety of substrates by the solution-liquid-solid (SLS) method. Our SLS syntheses employ size-controlled, near-monodisperse bismuth (Bi) nanoparticles (NPs) as the catalysts for QW growth, which offers several advantages over Bi NPs thermally generated from thin Bi films, including mean QW diameter control, narrow diameter distributions, small diameters in the quantum-confinement regime, and control of the QW density on the substrates. The Bi NPs are deposited on the substrates via drop casting of a Bi-NP solution and subsequently annealed in a reducing atmosphere, a key step to ensure firm attachment of the Bi NPs onto the substrates and maintenance of their catalytic activity for the QW-film growth. The QW growth density is proportional to the Bi-NP coating density, which is determined by the concentration of the Bi-NP deposition solution. Lower concentrations are used for small Bi NPs to reduce their high tendency for agglomeration and to achieve control over mean QW diameter and to produce narrow diameter distributions. Spectroscopic evidence of quantum confinement is provided. Related films of InP, InAs, and PbSe QWs are also described.
Hertel, Tobias; Himmelein, Sabine; Ackermann, Thomas; Stich, Dominik; Crochet, Jared
2010-12-28
Photoluminescence quantum yields and nonradiative decay of the excitonic S(1) state in length fractionated (6,5) single-wall carbon nanotubes (SWNTs) are studied by continuous wave and time-resolved fluorescence spectroscopy. The experimental data are modeled by diffusion limited contact quenching of excitons at stationary quenching sites including tube ends. A combined analysis of the time-resolved photoluminescence decay and the length dependence of photoluminescence quantum yields (PL QYs) from SWNTs in sodium cholate suspensions allows to determine the exciton diffusion coefficient D = 10.7 ± 0.4 cm(2)s(-1) and lifetime τ(PL) for long tubes of 20 ± 1 ps. PL quantum yields Φ(PL) are found to scale with the inverse diffusion coefficient and the square of the mean quenching site distance, here l(d) = 120 ± 25 nm. The results suggest that low PL QYs of SWNTs are due to the combination of high-diffusive exciton mobility with the presence of only a few quenching sites.
NASA Astrophysics Data System (ADS)
Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo; Duque, C. A.
2016-07-01
Excitonic properties are studied in a strained Ga1-xInxNyAs1-y/GaAs cylindrical quantum dot. The optimum condition for the desired band alignment for emitting wavelength 1.55 μm is investigated using band anticrossing model and the model solid theory. The band gap and the band discontinuities of a Ga1-xInxNyAs1-y/GaAs quantum dot on GaAs are computed with the geometrical confinement effect. The binding energy of the exciton, the oscillator strength and its radiative life time for the optimum condition are found taking into account the spatial confinement effect. The effects of geometrical confinement and the nitrogen incorporation on the interband emission energy are brought out. The result shows that the desired band alignment for emitting wavelength 1.55 μm is achieved for the inclusion of alloy contents, y=0.0554% and x=0.339% in Ga1-xInxNyAs1-y/GaAs quantum dot. And the incorporation of nitrogen and indium shows the red-shift and the geometrical confinement shows the blue-shift. And it can be applied for fibre optical communication networks.
Excitons and spin-dependent optical effects in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Govorov, Alexander; Warburton, Richard; Karrai, Khaled
2004-04-01
We discuss the possibility of entangling a localized exciton in a quantum dot with delocalized electrons in adjacent continuum states. We present two mechanisms by which this can occur, both involving excitons in InAs self-assembled quantum dots. The first mechanism involves a tunnel hybridization between weakly-confined electron states in the quantum dot and delocalized states in the continuum [1]. By describing the hybridization with the Anderson Hamiltonian we discover theoretically the existence of novel exciton states which can be called Kondo excitons [1]. We predict several optical manifestations of Kondo excitons. The second mechanism corresponds to an intra-dot Auger-like process [2,3]. Experiments in a magnetic field strongly support the picture of Auger-like processes [2]. [1] A.O. Govorov, R. J. Warburton, and K. Karrai, Phys. Rev. B RC, 67, 241307 (2003). [2] R.J. Warburton, B. Urbaszek, E.J. McGhee, C. Schulhauser, A. Hogele, K. Karrai, A.O.Govorov, J.M. Garcia, B.D.Gerardot, and P.M. Petroff, Nature 427, 135 (2004). [3] A. O. Govorov, K. Karrai, R. J. Warburton, and A. V. Kalameitsev, Physica E, 295 (2004).
NASA Astrophysics Data System (ADS)
Kishi, Ayaka; Oda, Masato; Shinozuka, Yuzo
2016-05-01
This paper reports on the electronic states of compound semiconductor alloys of wurtzite structure calculated by the recently proposed interacting quasi-band (IQB) theory combined with empirical sp3 tight-binding models. Solving derived quasi-Hamiltonian 24 × 24 matrix that is characterized by the crystal parameters of the constituents facilitates the calculation of the conduction and valence bands of wurtzite alloys for arbitrary concentrations under a unified scheme. The theory is applied to III-V and II-VI wurtzite alloys: cation-substituted Al1- x Ga x N and Ga1- x In x N and anion-substituted CdS1- x Se x and ZnO1- x S x . The obtained results agree well with the experimental data, and are discussed in terms of mutual mixing between the quasi-localized states (QLS) and quasi-average bands (QAB): the latter bands are approximately given by the virtual crystal approximation (VCA). The changes in the valence and conduction bands, and the origin of the band gap bowing are discussed on the basis of mixing character.
Multiphysics modeling of non-linear laser-matter interactions for optically active semiconductors
NASA Astrophysics Data System (ADS)
Kraczek, Brent; Kanp, Jaroslaw
Development of photonic devices for sensors and communications devices has been significantly enhanced by computational modeling. We present a new computational method for modelling laser propagation in optically-active semiconductors within the paraxial wave approximation (PWA). Light propagation is modeled using the Streamline-upwind/Petrov-Galerkin finite element method (FEM). Material response enters through the non-linear polarization, which serves as the right-hand side of the FEM calculation. Maxwell's equations for classical light propagation within the PWA can be written solely in terms of the electric field, producing a wave equation that is a form of the advection-diffusion-reaction equations (ADREs). This allows adaptation of the computational machinery developed for solving ADREs in fluid dynamics to light-propagation modeling. The non-linear polarization is incorporated using a flexible framework to enable the use of multiple methods for carrier-carrier interactions (e.g. relaxation-time-based or Monte Carlo) to enter through the non-linear polarization, as appropriate to the material type. We demonstrate using a simple carrier-carrier model approximating the response of GaN. Supported by ARL Materials Enterprise.
NASA Astrophysics Data System (ADS)
Kishi, Ayaka; Oda, Masato; Shinozuka, Yuzo
2016-05-01
This paper reports on the electronic states of compound semiconductor alloys of wurtzite structure calculated by the recently proposed interacting quasi-band (IQB) theory combined with empirical sp3 tight-binding models. Solving derived quasi-Hamiltonian 24 × 24 matrix that is characterized by the crystal parameters of the constituents facilitates the calculation of the conduction and valence bands of wurtzite alloys for arbitrary concentrations under a unified scheme. The theory is applied to III–V and II–VI wurtzite alloys: cation-substituted Al1‑ x Ga x N and Ga1‑ x In x N and anion-substituted CdS1‑ x Se x and ZnO1‑ x S x . The obtained results agree well with the experimental data, and are discussed in terms of mutual mixing between the quasi-localized states (QLS) and quasi-average bands (QAB): the latter bands are approximately given by the virtual crystal approximation (VCA). The changes in the valence and conduction bands, and the origin of the band gap bowing are discussed on the basis of mixing character.
NASA Astrophysics Data System (ADS)
Radovanovic, Pavle V.; Gamelin, Daniel R.
2002-11-01
Ligand field electronic absorption spectroscopy has been applied as a direct probe of Co2+ dopant ions in II-VI based diluted magnetic semiconductor quantum dots. Synthesis of Co2+-doped CdS (Co2+:CdS) quantum dots by simple coprecipitation in inverted micelle solutions has been found to yield predominantly surface bound dopant ions, which are unstable with respect to solvation in a coordinating solvent (pyridine). The solvation kinetics are biphasic, involving two transient intermediates. In contrast, Co2+ ions are doped much more isotropically in ZnS QDs, and this difference is attributed to the similar ionic radii of Co2+ and Zn2+ ions (0.74 Å), as opposed to Cd2+ ions (0.97 Å). We have developed an isocrystalline core/shell synthetic methodology that enables us to synthesize high quality internally doped Co2+:CdS quantum dots. The effect of Co2+ binding on the surface energies of CdS and ZnS quantum dots is discussed and related to the growth mechanism of diluted magnetic semiconductor quantum dots.
NASA Astrophysics Data System (ADS)
Wang, Jiyin; Huang, Shaoyun; Lei, Zijin; Pan, Dong; Zhao, Jianhua; Xu, H. Q.
2016-08-01
We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO2 substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of ΔST ˜ 2.3 meV, a strong spin-orbit interaction of ΔSO ˜ 140 μeV, and a large and strongly level-dependent Landé g factor of ˜12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.
NASA Astrophysics Data System (ADS)
Kim, Jungho
2014-02-01
The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.
Dai, Xiao; Wang, Hao; Yi, Qinghua; Wang, Yun; Cong, Shan; Zhao, Jie; Sun, Yinghui; Zou, Guifu E-mail: jiexiong@uestc.edu.cn; Qian, Zhicheng; Huang, Jianwen; Xiong, Jie E-mail: jiexiong@uestc.edu.cn; Luo, Hongmei
2015-11-16
Due to the different emission mechanism between fluorescent carbon dots and semiconductor quantum dots (QDs), it is of interest to explore the potential emission in hetero-structured carbon dots/semiconducting QDs. Herein, we design carbon dots coated CdTe QDs (CDQDs) and investigate their inherent emission. We demonstrate switchable emission for the hetero-interactions of the CDQDs. Optical analyses indicate electron transfer between the carbon dots and the CdTe QDs. A heterojunction electron process is proposed as the driving mechanism based on N atom protonation of the carbon dots. This work advances our understanding of the interaction mechanism of the heterostructured CDQDs and benefits the future development of optoelectronic nanodevices with new functionalities.
Amat, Anna; De Angelis, Filippo
2012-08-14
We report a first principles density functional theory/time-dependent density functional theory (DFT/TDDFT) computational investigation on a prototypical perylene dye anchored to realistic ZnO nanostructures, approaching the size of the ZnO nanowires used in dye-sensitized solar cells devices. DFT calculations were performed on (ZnO)(n) clusters of increasing size, with n up to 222, of 1.3 × 1.5 × 3.4 nm dimensions, and for the related dye-sensitized models. We show that quantum confinement in the ZnO nanostructures substantially affects the dye/semiconductor alignment of energy levels, with smaller ZnO models providing unfavourable electron injection. An increasing broadening of the dye LUMO is found moving to larger substrates, substantially contributing to the interfacial electronic coupling. TDDFT excited state calculations for the investigated dye@(ZnO)(222) system are fully consistent with experimental data, quantitatively reproducing the red-shift and broadening of the visible absorption spectrum observed for the ZnO-anchored dye compared to the dye in solution. TDDFT calculations on the fully interacting system also introduce a contribution to the dye/semiconductor admixture, due to configurational excited state mixing. Our results highlight the importance of quantum confinement in dye-sensitized ZnO interfaces, and provide the fundamental insight lying at the heart of the associated DSC devices. PMID:22743544
Magneto-optical studies of compound semiconductors
Jones, E.D.; Klem, J.F.; Lyo, S.K.
1994-09-01
A simultaneous determination of both the conduction and valence-band dispersion curves (and masses) from a single compound semiconductor quantum-well structure using magnetoluminescence is discussed. Data from InGaAs/GaAs strained-single-quantum wells and GaAs/AlGaAs lattice matched quantum wells are presented. The conduction bands are found to be parabolic for densities approaching densities of 1 {times} 10{sup 12} cm{sup {minus}2}. However, the valence bands are highly nonparabolic and strongly affected by heavy-hole light-hole interactions.
Activation of porphyrin photosensitizers by semiconductor quantum dots via two-photon excitation
Wen Yanan; Song Weisi; Liu Yuqiang; Wang Yinghui; Yang Yanqiang; An Limin
2009-10-05
Energy transfer from water-soluble quantum dots (QDs) to porphyrinlike sensitizers is studied by time-resolved spectroscopy of two-photon excitation with femtosecond laser pulses. Evident transfer results are observed. Electron exchange is found to be the dominant transfer mechanism. Relative intensity change between excitonic and trapping emission implies that nonradiative energy transfer occurs through the trapping state of QDs, which presents a way of raising energy transfer efficiency in this type of donor-acceptor pairs. This study underlines the potential of QD-porphyrin model system for applications in two-photon excitation photodynamic therapy.
Exciton gas compression and metallic condensation in a single semiconductor quantum wire.
Alén, B; Fuster, D; Muñoz-Matutano, G; Martínez-Pastor, J; González, Y; Canet-Ferrer, J; González, L
2008-08-01
We study the metal-insulator transition in individual self-assembled quantum wires and report optical evidence of metallic liquid condensation at low temperatures. First, we observe that the temperature and power dependence of the single nanowire photoluminescence follow the evolution expected for an electron-hole liquid in one dimension. Second, we find novel spectral features that suggest that in this situation the expanding liquid condensate compresses the exciton gas in real space. Finally, we estimate the critical density and critical temperature of the phase transition diagram at n{c} approximately 1 x 10;{5} cm;{-1} and T{c} approximately 35 K, respectively.
Decoherence processes during optical manipulation of excitonic qubits in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Wang, Q. Q.; Muller, A.; Bianucci, P.; Rossi, E.; Xue, Q. K.; Takagahara, T.; Piermarocchi, C.; MacDonald, A. H.; Shih, C. K.
2005-07-01
Using photoluminescence spectroscopy, we have investigated the nature of Rabi oscillation damping during optical manipulation of excitonic qubits in self-assembled quantum dots. Rabi oscillations were recorded by varying the pulse amplitude for fixed pulse durations between 4ps and 10ps . Up to five periods are visible, making it possible to quantify the excitation dependent damping. We find that this damping is more pronounced for shorter pulse widths and show that its origin is the nonresonant excitation of carriers in the wetting layer, most likely involving bound-to-continuum and continuum-to-bound transitions.
Khadzhi, P I; Vasiliev, V V
2010-12-09
The peculiarities of two-photon nutation in a system of coherent biexcitons in CuCl semiconductors are considered taking into account the elastic biexciton - biexciton interaction. It is shown that depending on the system parameters, optical nutation represents a process of periodic transformation of photon pairs into biexcitons and vice versa. The possibility of exercising the phase control of the optical nutation process is predicted. (nonlinear optical phenomena)
Burris, Kellie P; Wu, Tsai-Chin; Vasudev, Milana; Stroscio, Michael A; Millwood, Reginald J; Stewart, C Neal
2013-09-01
Signature molecules derived from Listeria monocytogenes, Bacillus thuringiensis, and Salmonella Typhimurium were detected directly on food substrates (mega) by coupling molecular beacon technology utilizing fluorescent resonance energy transfer (FRET), luminescent nanoscale semiconductor quantum dots, and nanoscale quenchers. We designed target DNA sequences for detecting hlyA, Bt cry1Ac, and invA genes from L. monocytogenes, B. thuringiensis and Salmonella Typhimurium, respectively, and prepared molecular beacons for specific targets for use in real-time monitoring. We successfully detected increased fluorescence in the presence of signature molecules at molecular beacon (MB) concentrations from 1.17 nM to 40 nM, depending upon system tested in (water, milk or plant leaves), respective target (hlyA, Bt cry1Ac, or invA) and genomic DNA target concentration (50-800 ng). We were able to detect bacterial genomic DNA derived from L. monocytogenes and Salmonella sp. in a food system, 2% milk ( > 20% of total volume). Furthermore, we infiltrated the Bt cry1Ac beacon in the presence of genomic DNA extracted from B. thuringiensis into Arabidopsis thaliana leaves and observed increased fluorescence in the presence of the target, indicating the ability to use these beacons in a plant system. PMID:23722479
CuSbS2: a promising semiconductor photo-absorber material for quantum dot sensitized solar cells.
Liu, Zhifeng; Huang, Jiajun; Han, Jianhuan; Hong, Tiantian; Zhang, Jing; Liu, Zhihua
2016-06-22
A facile, low-cost, simple solution-based process for preparing novel promising chalcostibite CuSbS2 sensitized ZnO nanorod arrays, and the application of these as photoanodes of semiconductor quantum dot sensitized inorganic-organic solar cells (QDSSCs) is reported for the first time. ZnO/CuSbS2 nanofilms were designed and prepared through a simple successive ionic layer adsorption and reaction (SILAR) method and heat treatment process by employing ZnO nanorods as reactive templates. Novel efficient QDSSCs based on the ZnO/CuSbS2 nanofilms plus a solid electrolyte of poly(3-hexylthiophene) (P3HT) were formed, and a power conversion efficiency of 1.61% was achieved. The excellent photoelectric performance is attributed to the improved light absorption efficiency, widened light absorption region, ideal band gap value, and high speed electron injection and transportation. The results demonstrate that a novel ternary sensitizer (I-V-VI2) can be synthesized via a low-cost method as described here and has great promising potential as a sensitizer in solar cells.
NASA Technical Reports Server (NTRS)
Leopold, Daniel J.
2002-01-01
The primary goal of this research project was to further extend the use of advanced heteroepitaxial-semiconductor crystal growth techniques such as molecular beam epitaxy (MBE) and to demonstrate significant gains in UV/blue photonic detection by designing and fabricating atomically-tailored heteroepitaxial GaAlN/GaInN photocathode device structures. This NASA Explorer technology research program has focused on the development of photocathodes for Cherenkov and scintillation radiation detection. Support from the program allowed us to enhance our MBE system to include a nitrogen plasma source and a magnetic bearing turbomolecular pump for delivery and removal of high purity atomic nitrogen during GaAlN/GaInN film growth. Under this program we have also designed, built and incorporated a cesium activation stage. In addition, a connected UHV chamber with photocathode transfer/positioner components as well as a hybrid phototube stage was designed and built to make in-situ quantum efficiency measurements without ever having to remove the photocathodes from UHV conditions. Thus we have constructed a system with the capability to couple atomically-tailored MBE-grown photocathode heterostructures with real high gain readout devices for single photon detection evaluation.
Burris, Kellie P; Wu, Tsai-Chin; Vasudev, Milana; Stroscio, Michael A; Millwood, Reginald J; Stewart, C Neal
2013-09-01
Signature molecules derived from Listeria monocytogenes, Bacillus thuringiensis, and Salmonella Typhimurium were detected directly on food substrates (mega) by coupling molecular beacon technology utilizing fluorescent resonance energy transfer (FRET), luminescent nanoscale semiconductor quantum dots, and nanoscale quenchers. We designed target DNA sequences for detecting hlyA, Bt cry1Ac, and invA genes from L. monocytogenes, B. thuringiensis and Salmonella Typhimurium, respectively, and prepared molecular beacons for specific targets for use in real-time monitoring. We successfully detected increased fluorescence in the presence of signature molecules at molecular beacon (MB) concentrations from 1.17 nM to 40 nM, depending upon system tested in (water, milk or plant leaves), respective target (hlyA, Bt cry1Ac, or invA) and genomic DNA target concentration (50-800 ng). We were able to detect bacterial genomic DNA derived from L. monocytogenes and Salmonella sp. in a food system, 2% milk ( > 20% of total volume). Furthermore, we infiltrated the Bt cry1Ac beacon in the presence of genomic DNA extracted from B. thuringiensis into Arabidopsis thaliana leaves and observed increased fluorescence in the presence of the target, indicating the ability to use these beacons in a plant system.
CuSbS2: a promising semiconductor photo-absorber material for quantum dot sensitized solar cells.
Liu, Zhifeng; Huang, Jiajun; Han, Jianhuan; Hong, Tiantian; Zhang, Jing; Liu, Zhihua
2016-06-22
A facile, low-cost, simple solution-based process for preparing novel promising chalcostibite CuSbS2 sensitized ZnO nanorod arrays, and the application of these as photoanodes of semiconductor quantum dot sensitized inorganic-organic solar cells (QDSSCs) is reported for the first time. ZnO/CuSbS2 nanofilms were designed and prepared through a simple successive ionic layer adsorption and reaction (SILAR) method and heat treatment process by employing ZnO nanorods as reactive templates. Novel efficient QDSSCs based on the ZnO/CuSbS2 nanofilms plus a solid electrolyte of poly(3-hexylthiophene) (P3HT) were formed, and a power conversion efficiency of 1.61% was achieved. The excellent photoelectric performance is attributed to the improved light absorption efficiency, widened light absorption region, ideal band gap value, and high speed electron injection and transportation. The results demonstrate that a novel ternary sensitizer (I-V-VI2) can be synthesized via a low-cost method as described here and has great promising potential as a sensitizer in solar cells. PMID:27297190
NASA Astrophysics Data System (ADS)
Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya
2016-04-01
A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.
Yamashita, Shin-Ichi; Hamada, Morihiko; Nakanishi, Shunsuke; Saito, Hironobu; Nosaka, Yoshio; Wakida, Shin-Ichi; Biju, Vasudevanpillai
2015-03-23
Despite the bright and tuneable photoluminescence (PL) of semiconductor quantum dots (QDs), the PL instability induced by Auger recombination and oxidation poses a major challenge in single-molecule applications of QDs. The incomplete information about Auger recombination and oxidation is an obstacle in the resolution of this challenge. Here, we report for the first time that Auger-ionized QDs beat self-sensitized oxidation and the non-digitized PL intensity loss. Although high-intensity photoactivation insistently induces PL blinking, the transient escape of QDs into the ultrafast Auger recombination cycle prevents generation of singlet oxygen ((1) O2 ) and preserves the PL intensity. By the detection of the NIR phosphorescence of (1) O2 and evaluation of the photostability of single QDs in aerobic, anaerobic, and (1) O2 scavenger-enriched environments, we disclose relations of Auger ionization and (1) O2 -mediated oxidation to the PL stability of single QDs, which will be useful during the formulation of QD-based single-molecule imaging tools and single-photon devices.
Quantum correlations of two qubits interacting with a macroscopic medium
NASA Astrophysics Data System (ADS)
Liu, Yan; Lu, Jing; Zhou, Lan
2015-04-01
We consider two particles of spin- interacting with a one-dimensional -spin array, which is an exactly solvable model. The dynamics of entanglement and quantum discord (QD) of the spins of the two particles is investigated by regarding the 1D -spin array as the environment. It is found that although the entanglement may suffer a sudden death and a sudden birth in the evolution, it can neither be generated nor become larger than its initial value. Different from the entanglement dynamics, QD can be amplified and even be generated by the interaction between particles and the common environment. We also observe that QD decays asymptotically to zero and later experiences a rival when the average number of excitation in the 1D -spin array becomes larger in the case of nonzero inter-distance between two particles.
Semiconductor Hall magnetometers for magnetic measurement of (In,Cr)As quantum dots
NASA Astrophysics Data System (ADS)
Kim, Joon-Il; Guan, T.; von Molnar, S.; Xiong, P.; Wang, S. L.; Wang, H. L.; Zhao, J. H.
2014-03-01
Recently, SQUID magnetometry measurements of MBE-grown self-assembled (In,Cr)As QDs showed magnetic hysteresis indicating possible existence of ferromagnetic ordering above 300 K. However, the temperature dependence of the remnant magnetization did not follow the standard Brillouin-like behavior, and the interpretation of the data and elucidation of the origin of the ferromagnetism in the QDs have been hindered by the large ensemble-averaged measurement. Measurements on small clusters or even individual QDs would facilitate a direct correlation of the measured magnetic properties with their structural and chemical characteristics, possibly enabling a definitive understanding of the origin of the ferromagnetism in the diluted magnetic semiconductor QDs. Towards this goal, we have fabricated integrated micro-Hall magnetometers based on high-mobility GaAs/AlGaAs 2DEG in order to facilitate static and dynamic magnetic measurements of the QDs via the Hall gradiometry technique. Integrated structures of (In,Cr)As QDs on top of a GaAs/AlGaAs heterostructure were grown entirely in situ by MBE. Micro-Hall magnetometer devices with six Hall-crosses were fabricated using photolithography and wet chemical etching. Using carefully calibrated selective chemical etching, all QDs were removed except those on three of the Hall-crosses so as to enable gradiometry measurement. Results of on-going measurements will be discussed. Work supported by NSF grants DMR-09008625 and DMR-1308613.
Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots.
Shin, Seung Won; Lee, Kwang-Ho; Park, Jin-Seong; Kang, Seong Jun
2015-09-01
Highly transparent phototransistors that can detect visible light have been fabricated by combining indium-gallium-zinc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35×10(4) A/W and an external quantum efficiency of 2.59×10(4) under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photodetectors that can detect visible light. PMID:26293387
A Closer Look into the Traditional Purification Process of CdSe Semiconductor Quantum Dots.
Shakeri, Behtash; Meulenberg, Robert W
2015-12-15
This paper describes how the postprocessing procedure for wurtzite CdSe quantum dots (QDs) 4.8 and 6.7 nm in diameter is affected by both the choice of nonsolvent and the number of processing steps. Using a host of analytical techniques (ultraviolet-visible, photoluminescence, nuclear magnetic, X-ray photoelectron, and infrared spectroscopy, as well as thermogravimetric analysis), we find that control over the ligand type and surface density can be achieved simply by the number of washing steps used during the postprocessing procedure. Using multiple washing steps we can achieve colloidally stable solutions of QDs with organic mass fractions as low as 13% by mass. For CdSe QDs passivated with trioctylphosphine oxide (TOPO) and stearic acid (SA), essentially no TOPO is bound to the particle surface after three or four washing steps, with a plateau in the amount of SA being removed. The results can be explained using the L- and X-type ligand classification system for QDs, with L-type ligands (TOPO) removed in the early processing steps but the removal of X-type (SA) ligand stalling at a large number of washing steps due to charging of the QDs. Importantly, very little change is observed in the photoluminescence (PL) properties, suggesting that the choice of nonsolvent during postprocessing will allow the production of QD materials with very low organic content by mass but with good PL quantum yields. PMID:26625188
Calculation of strain compensation thickness for III-V semiconductor quantum dot superlattices
NASA Astrophysics Data System (ADS)
Polly, S. J.; Bailey, C. G.; Grede, A. J.; Forbes, D. V.; Hubbard, S. M.
2016-11-01
Models based on continuum elasticity theory are discussed to calculate the necessary thickness of a strain compensation (SC) layer for a superlattice (SL) of strained quantum wells (QW) or quantum dots (QD). These models are then expanded to cover material systems (substrates, QW or QD, and SC) composed of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, or InSb, as well as the ternary, quaternary, and higher order material alloys possible in the Al/Ga/In/P/As/Sb systems. SC thickness calculation methods were compared against dynamical scattering simulations and experimental X-ray diffraction measurements of the InAs/GaP/GaAs QD/SC/Substrate superlattices of varying SC thickness. Based on the reduced (but not eliminated) strain present, a further modified strain compensation thickness is calculated to maximize the number of SL repeat units before the onset of misfit dislocations is also calculated. These models have been assembled into a free application on nanoHUB for use by the community.
Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots.
Shin, Seung Won; Lee, Kwang-Ho; Park, Jin-Seong; Kang, Seong Jun
2015-09-01
Highly transparent phototransistors that can detect visible light have been fabricated by combining indium-gallium-zinc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35×10(4) A/W and an external quantum efficiency of 2.59×10(4) under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photodetectors that can detect visible light.
NASA Astrophysics Data System (ADS)
Lee, S.; Titova, L. V.; Furdyna, Jacek K.; Dobrowolska, M.
2000-03-01
It has been recently reported that the properties of self-organized CdSe quantum dots (QDs) on ZnSe change significantly when they are grown on ZnMnSe spacers separating CdSe form ZnSe.[1] To explore this effect futher, we have prepared a series of samples by depositing one monolayer (ML) of CdSe on ZnMnSe spacer layers of different thickness and different Mn concentration. The system is then capped with ZnSe. The band structure for this geometry results in an asymmetric quantum structure, where the 1 ML thick CdSe acts as a "well" between barriers comprised of ZnSe on side, and ZnMnSe on the other. When a magnetic field is applied, the Zeeman splitting of the band edges in ZnMnSe spacer moves the position of the wave function toward or away from the spacer, depending on spin orientation. Such spin-selective repositioning of the wave functions is fully confirmed by magnetic field dependence of ground state exciton transitions observed in PL. This work was supported by NSF Grant DMR 9705064. [1]C.S. Kim et.al., 9th International conference on II-VI compounds, Kyoto, Nov. 1-5, 1999.
Gotoh, Hideki Sanada, Haruki; Yamaguchi, Hiroshi; Sogawa, Tetsuomi
2014-10-15
Optical nonlinear effects are examined using a two-color micro-photoluminescence (micro-PL) method in a coherently coupled exciton-biexciton system in a single quantum dot (QD). PL and photoluminescence excitation spectroscopy (PLE) are employed to measure the absorption spectra of the exciton and biexciton states. PLE for Stokes and anti-Stokes PL enables us to clarify the nonlinear optical absorption properties in the lowest exciton and biexciton states. The nonlinear absorption spectra for excitons exhibit asymmetric shapes with peak and dip structures, and provide a distinct contrast to the symmetric dip structures of conventional nonlinear spectra. Theoretical analyses with a density matrix method indicate that the nonlinear spectra are caused not by a simple coherent interaction between the exciton and biexciton states but by coupling effects among exciton, biexciton and continuum states. These results indicate that Fano quantum interference effects appear in exciton-biexciton systems at QDs and offer important insights into their physics.
Interaction effects and quantum phase transitions in topological insulators
Varney, Christopher N.; Sun Kai; Galitski, Victor; Rigol, Marcos
2010-09-15
We study strong correlation effects in topological insulators via the Lanczos algorithm, which we utilize to calculate the exact many-particle ground-state wave function and its topological properties. We analyze the simple, noninteracting Haldane model on a honeycomb lattice with known topological properties and demonstrate that these properties are already evident in small clusters. Next, we consider interacting fermions by introducing repulsive nearest-neighbor interactions. A first-order quantum phase transition was discovered at finite interaction strength between the topological band insulator and a topologically trivial Mott insulating phase by use of the fidelity metric and the charge-density-wave structure factor. We construct the phase diagram at T=0 as a function of the interaction strength and the complex phase for the next-nearest-neighbor hoppings. Finally, we consider the Haldane model with interacting hard-core bosons, where no evidence for a topological phase is observed. An important general conclusion of our work is that despite the intrinsic nonlocality of topological phases their key topological properties manifest themselves already in small systems and therefore can be studied numerically via exact diagonalization and observed experimentally, e.g., with trapped ions and cold atoms in optical lattices.
Current-Current Interactions, Dynamical Symmetry - and Quantum Chromodynamics.
NASA Astrophysics Data System (ADS)
Neuenschwander, Dwight Edward, Jr.
Quantum Chromodynamics with massive gluons (gluon mass (TBOND) xm(,p)) in a contact-interaction limit called CQCD (strong coupling g (--->) (INFIN); x (--->) (INFIN)), despite its non-renormalizability and lack of hope of confinement, is nevertheless interesting for at least two reasons. (1) Some authors have suggested a relation between 4-Fermi and Yang-Mills theories. If g/x('2) << 1, then CQCD is not merely a 4-Fermi interaction, but includes 4, 6, 8, ...-Fermi non-Abelian contact interactions. (2) With the possibility of infrared slavery, perturbative evaluation of QCD in the infrared is a dubious practice. However, if g('2)/x('2) << 1 in CQCD, then the simplest 4-Fermi interaction is dominant, and CQCD admits perturbative treatment, but only in the infrared. With the dominant interaction, a dynamical Nambu-Goldstone realization of chiral symmetry -breaking (XSB) is found. Although in QCD the relation between confinement and XSB is controversial, XSB occurs in CQCD provided confinement is sacrificed.
Limits Of Quantum Information In Weak Interaction Processes Of Hyperons
Hiesmayr, B. C.
2015-01-01
We analyze the achievable limits of the quantum information processing of the weak interaction revealed by hyperons with spin. We find that the weak decay process corresponds to an interferometric device with a fixed visibility and fixed phase difference for each hyperon. Nature chooses rather low visibilities expressing a preference to parity conserving or violating processes (except for the decay Σ+→ pπ0). The decay process can be considered as an open quantum channel that carries the information of the hyperon spin to the angular distribution of the momentum of the daughter particles. We find a simple geometrical information theoretic interpretation of this process: two quantization axes are chosen spontaneously with probabilities where α is proportional to the visibility times the real part of the phase shift. Differently stated, the weak interaction process corresponds to spin measurements with an imperfect Stern-Gerlach apparatus. Equipped with this information theoretic insight we show how entanglement can be measured in these systems and why Bell’s nonlocality (in contradiction to common misconception in literature) cannot be revealed in hyperon decays. Last but not least we study under which circumstances contextuality can be revealed. PMID:26144247