Performance evaluation of multi-junction solar cells by spatially resolved electroluminescence microscopy.

PubMed

Kong, Lijing; Wu, Zhiming; Chen, Shanshan; Cao, Yiyan; Zhang, Yong; Li, Heng; Kang, Junyong

2015-01-01

An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external quantum efficiency (EQE) measurements demonstrated that different types of defects or damages impacted cell performance in various degrees and the electric leakage mostly degraded the EQE. Meanwhile, we analyzed the relationship between electroluminescence intensity and short-circuit current density J SC. The results indicated that the gray value of the electroluminescence image corresponding to the intensity was almost proportional to J SC. This technology provides a potential way to evaluate the current matching status of multi-junction solar cells.

Solar cell circuit and method for manufacturing solar cells

NASA Technical Reports Server (NTRS)

Mardesich, Nick (Inventor)

2010-01-01

The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

Tandem Solar Cells from Accessible Low Band-Gap Polymers Using an Efficient Interconnecting Layer.

PubMed

Bag, Santanu; Patel, Romesh J; Bunha, Ajaykumar; Grand, Caroline; Berrigan, J Daniel; Dalton, Matthew J; Leever, Benjamin J; Reynolds, John R; Durstock, Michael F

2016-01-13

Tandem solar cell architectures are designed to improve device photoresponse by enabling the capture of wider range of solar spectrum as compared to single-junction device. However, the practical realization of this concept in bulk-heterojunction polymer systems requires the judicious design of a transparent interconnecting layer compatible with both polymers. Moreover, the polymers selected should be readily synthesized at large scale (>1 kg) and high performance. In this work, we demonstrate a novel tandem polymer solar cell that combines low band gap poly isoindigo [P(T3-iI)-2], which is easily synthesized in kilogram quantities, with a novel Cr/MoO3 interconnecting layer. Cr/MoO3 is shown to be greater than 80% transparent above 375 nm and an efficient interconnecting layer for P(T3-iI)-2 and PCDTBT, leading to 6% power conversion efficiencies under AM 1.5G illumination. These results serve to extend the range of interconnecting layer materials for tandem cell fabrication by establishing, for the first time, that a thin, evaporated layer of Cr/MoO3 can work as an effective interconnecting layer in a tandem polymer solar cells made with scalable photoactive materials.

Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

NASA Technical Reports Server (NTRS)

Woodyard, James R.

1995-01-01

Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell quantum efficiency at various voltage biases, including the voltage bias corresponding to the maximum-power point under AMO light bias. The details of the procedures to 'fit' the spectral irradiance to AMO will be discussed. An assessment of the role of the accuracy of the 'fit' of the spectral irradiance and probe beam intensity on measured cell characteristics will be presented. quantum efficiencies were measured with both spectral light bias and AMO light bias; the measurements show striking differences. Spectral irradiances were convoluted with cell quantum efficiencies to calculate cell currents as function of voltage. The calculated currents compare with measured currents at the 1% level. Measurements on a variety of multi-junction cells will be presented. The dependence of defects in junctions on cell quantum efficiencies measured under light and voltage bias conditions will be presented. Comments will be made on issues related to standards for calibration, and limitations of the instrumentation and techniques. Expeditious development of multi-junction solar cell technology for space presents challenges for cell characterization in the laboratory.

Design and Performance of a Triple Source Air Mass Zero Solar Simulator

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Scheiman, David; Snyder, David

2005-01-01

Simulating the sun in a laboratory for the purpose of measuring solar cells has long been a challenge for engineers and scientists. Multi-junction cells demand higher fidelity of a solar simulator than do single junction cells, due to a need for close spectral matching as well as AM0 intensity. A GaInP/GaAs/Ge solar cell for example, requires spectral matching in three distinct spectral bands (figure 1). A commercial single source high-pressure xenon arc solar simulator such as the Spectrolab X-25 at NASA Glenn Research Center, can match the top two junctions of a GaInP/GaAs/Ge cell to within 1.3% mismatch, with the GaAs cell receiving slightly more current than required. The Ge bottom cell however, is mismatched +8.8%. Multi source simulators are designed to match the current for all junctions but typically have small illuminated areas, less uniformity and less beam collimation compared to an X-25 simulator. It was our intent when designing a multi source simulator to preserve as many aspects of the X-25 while adding multi-source capability.

Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

NASA Technical Reports Server (NTRS)

Gaddy, Edward M.

1995-01-01

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

Cost Trade Between Multi-Junction, Gallium Arsenide, and Silicon Solar Cells

NASA Technical Reports Server (NTRS)

Gaddy, Edward M.

1995-01-01

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar 2 cells and cost approximately five times as much per unit power at the cell level. A trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552,000 dollars per kilogram to launch and suppon3science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. ff the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and supported at a price of approximately $58,000 per kilogram. The trade shows that even if the multi-junction cells are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $180,000 per kilogram. This is still much less than the original $552,000 per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.

DOEpatents

Yang, Liyou; Chen, Liangfan

1998-03-24

Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

Radiation hardness of Ga0.5In0.5 P/GaAs tandem solar cells

NASA Technical Reports Server (NTRS)

Kurtz, Sarah R.; Olson, J. M.; Bertness, K. A.; Friedman, D. J.; Kibbler, A.; Cavicchi, B. T.; Krut, D. D.

1991-01-01

The radiation hardness of a two-junction monolithic Ga sub 0.5 In sub 0.5 P/GaAs cell with tunnel junction interconnect was investigated. Related single junction cells were also studied to identify the origins of the radiation losses. The optimal design of the cell is discussed. The air mass efficiency of an optimized tandem cell after irradiation with 10(exp 15) cm (-2) 1 MeV electrons is estimated to be 20 percent using currently available technology.

Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

NASA Astrophysics Data System (ADS)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy; Geisz, John F.; Steiner, Myles A.; Horowitz, Kelsey; Barraud, Loris; Ward, J. Scott; Schnabel, Manuel; Descoeudres, Antoine; Young, David L.; Woodhouse, Michael; Despeisse, Matthieu; Ballif, Christophe; Tamboli, Adele

2017-09-01

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the record III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.

Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the recordmore » III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.« less

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, Hong Q.; Reinhardt, Kitt C.

1999-01-01

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, H.Q.; Reinhardt, K.C.

1999-08-31

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

Solar energy converters based on multi-junction photoemission solar cells.

PubMed

Tereshchenko, O E; Golyashov, V A; Rodionov, A A; Chistokhin, I B; Kislykh, N V; Mironov, A V; Aksenov, V V

2017-11-23

Multi-junction solar cells with multiple p-n junctions made of different semiconductor materials have multiple bandgaps that allow reducing the relaxation energy loss and substantially increase the power-conversion efficiency. The choice of materials for each sub-cell is very limited due to the difficulties in extracting the current between the layers caused by the requirements for lattice- and current-matching. We propose a new vacuum multi-junction solar cell with multiple p-n junctions separated by vacuum gaps that allow using different semiconductor materials as cathode and anode, both activated to the state of effective negative electron affinity (NEA). In this work, the compact proximity focused vacuum tube with the GaAs(Cs,O) photocathode and AlGaAs/GaAs-(Cs,O) anode with GaAs quantum wells (QWs) is used as a prototype of a vacuum single-junction solar cell. The photodiode with the p-AlGaAs/GaAs anode showed the spectral power-conversion efficiency of about 1% at V bias  = 0 in transmission and reflection modes, while, at V bias  = 0.5 V, the efficiency increased up to 10%. In terms of energy conservation, we found the condition at which the energy cathode-to-anode transition was close to 1. Considering only the energy conservation part, the NEA-cell power-conversion efficiency can rich a quantum yield value which is measured up to more than 50%.

Design High-Efficiency III-V Nanowire/Si Two-Junction Solar Cell.

PubMed

Wang, Y; Zhang, Y; Zhang, D; He, S; Li, X

2015-12-01

In this paper, we report the electrical simulation results of a proposed GaInP nanowire (NW)/Si two-junction solar cell. The NW physical dimensions are determined for optimized solar energy absorption and current matching between each subcell. Two key factors (minority carrier lifetime, surface recombination velocity) affecting power conversion efficiency (PCE) of the solar cell are highlighted, and a practical guideline to design high-efficiency two-junction solar cell is thus provided. Considering the practical surface and bulk defects in GaInP semiconductor, a promising PCE of 27.5 % can be obtained. The results depict the usefulness of integrating NWs to construct high-efficiency multi-junction III-V solar cells.

Optimization of antireflection coating design for multijunction solar cells and concentrator systems

NASA Astrophysics Data System (ADS)

Valdivia, Christopher E.; Desfonds, Eric; Masson, Denis; Fafard, Simon; Carlson, Andrew; Cook, John; Hall, Trevor J.; Hinzer, Karin

2008-06-01

Photovoltaic solar cells are a route towards local, environmentally benign, sustainable and affordable energy solutions. Antireflection coatings are necessary to input a high percentage of available light for photovoltaic conversion, and therefore have been widely exploited for silicon solar cells. Multi-junction III-V semiconductor solar cells have achieved the highest efficiencies of any photovoltaic technology, yielding up to 40% in the laboratory and 37% in commercial devices under varying levels of concentrated light. These devices benefit from a wide absorption spectrum (300- 1800 nm), but this also introduces significant challenges for antireflection coating design. Each sub-cell junction is electrically connected in series, limiting the overall device photocurrent by the lowest current-producing junction. Therefore, antireflection coating optimization must maximize the current from the limiting sub-cells at the expense of the others. Solar concentration, necessary for economical terrestrial deployment of multi-junction solar cells, introduces an angular-dependent irradiance spectrum. Antireflection coatings are optimized for both direct normal incidence in air and angular incidence in an Opel Mk-I concentrator, resulting in as little as 1-2% loss in photocurrent as compared to an ideal zero-reflectance solar cell, showing a similar performance to antireflection coatings on silicon solar cells. A transparent conductive oxide layer has also been considered to replace the metallic-grid front electrode and for inclusion as part of a multi-layer antireflection coating. Optimization of the solar cell, antireflection coating, and concentrator system should be considered simultaneously to enable overall optimal device performance.

Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

DOE PAGES

Young, James L.; Steiner, Myles A.; Döscher, Henning; ...

2017-03-13

Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-dopedmore » photocathodes by using a buried p-n junction. Lastly, advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.« less

Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, James L.; Steiner, Myles A.; Döscher, Henning

Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-dopedmore » photocathodes by using a buried p-n junction. Lastly, advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.« less

Nanostructured Solar Cells.

PubMed

Chen, Guanying; Ning, Zhijun; Ågren, Hans

2016-08-09

We are glad to announce the Special Issue "Nanostructured Solar Cells", published in Nanomaterials. This issue consists of eight articles, two communications, and one review paper, covering major important aspects of nanostructured solar cells of varying types. From fundamental physicochemical investigations to technological advances, and from single junction solar cells (silicon solar cell, dye sensitized solar cell, quantum dots sensitized solar cell, and small molecule organic solar cell) to tandem multi-junction solar cells, all aspects are included and discussed in this issue to advance the use of nanotechnology to improve the performance of solar cells with reduced fabrication costs.

Progress in the Development of Metamorphic Multi-Junction III-V Space-Solar Cells at Essential Research Incorporated

NASA Technical Reports Server (NTRS)

Sinharoy, Samar; Patton, Martin O.; Valko, Thomas M., Sr.; Weizer, Victor G.

2002-01-01

Theoretical calculations have shown that highest efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single junction 1.1 eV and 1.2 eV InGaAs solar cells by Essential Research Incorporated (ERI), interest has grown in the development of multi-junction cells of this type using graded buffer layer technology. ERI is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AM0), one-sun efficiency of 28%, and 100-sun efficiency of 37.5%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort at ERI involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AM0 efficiency of 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. In case of the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper.

Graphene-Enhanced Thermal Interface Materials for Thermal Management of Solar Cells

NASA Astrophysics Data System (ADS)

Saadah, Mohammed Ahmed

The interest to photovoltaic solar cells as a source of energy for a variety of applications has been rapidly increasing in recent years. Solar cells panels that employ optical concentrators can convert more than 30% of absorbed light into electricity. Most of the remaining 70% of absorbed energy is turned into heat inside the solar cell. The increase in the photovoltaic cell temperature negatively affects its power conversion efficiency and lifetime. In this dissertation research I investigated a feasibility of using graphene fillers in thermal interface materials for improving thermal management of multi-junction concentrator solar cells. Graphene and few-layer graphene fillers, produced by a scalable environmentally-friendly liquid-phase exfoliation technique, were incorporated into conventional thermal interface materials. Characteristics of the composites have been examined with Raman spectroscopy, optical microscopy and thermal conductivity measurements. Graphene-enhanced thermal interface materials have been applied between a solar cell and heat sink to improve heat dissipation. The performance of the single and multi-junction solar cells has been tested using an industry-standard solar simulator under the light concentration of up to 2000 suns. It was found that the application of graphene-enhanced thermal interface materials allows one to reduce the solar cell temperature and increase the open-circuit voltage. We demonstrated that the use of graphene helps in recovering significant amount of the power loss due to solar cell overheating. The obtained results are important for the development of new technologies for thermal management of concentrated and multi-junction photovoltaic solar cells.

Module level solutions to solar cell polarization

DOEpatents

Xavier, Grace , Li; Bo, [San Jose, CA

2012-05-29

A solar cell module includes interconnected solar cells, a transparent cover over the front sides of the solar cells, and a backsheet on the backsides of the solar cells. The solar cell module includes an electrical insulator between the transparent cover and the front sides of the solar cells. An encapsulant protectively packages the solar cells. To prevent polarization, the insulator has resistance suitable to prevent charge from leaking from the front sides of the solar cells to other portions of the solar cell module by way of the transparent cover. The insulator may be attached (e.g., by coating) directly on an underside of the transparent cover or be a separate layer formed between layers of the encapsulant. The solar cells may be back junction solar cells.

Space Photovoltaic Research and Technology, 1989

NASA Technical Reports Server (NTRS)

1991-01-01

Remarkable progress on a wide variety of approaches in space photovoltaics, for both near and far term applications is reported. Papers were presented in a variety of technical areas, including multi-junction cell technology, GaAs and InP cells, system studies, cell and array development, and non-solar direct conversion. Five workshops were held to discuss the following topics: mechanical versus monolithic multi-junction cells; strategy in space flight experiments; non-solar direct conversion; indium phosphide cells; and space cell theory and modeling.

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

2001-01-01

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

Single-graded CIGS with narrow bandgap for tandem solar cells.

PubMed

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Single-graded CIGS with narrow bandgap for tandem solar cells

PubMed Central

Avancini, Enrico; Buecheler, Stephan; Tiwari, Ayodhya N.

2018-01-01

Abstract Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells. PMID:29707066

Ohmic contact junction of carbon nanotubes fabricated by in situ electron beam deposition

NASA Astrophysics Data System (ADS)

Wang, Y. G.; Wang, T. H.; Lin, X. W.; Dravid, V. P.

2006-12-01

We present experimental evidence of in situ fabrication of multi-walled carbon nanotube junctions via electron beam induced deposition. The tip-to-tip interconnection of the nanotubes involves the alignment of two nanotubes via a piezodriven nanomanipulator and nano-welding by electron beam deposition. Hydrocarbon contamination from the pump oil vapour of the vacuum system of the TEM chamber was used as the solder; this is superior to the already available metallic solders because its composition is identical to the carbon nanotube. The hydrocarbon deposition, with perfect wettability, on the nanotubes establishes strong mechanical binding between the two nanotubes to form an integrated structure. Consequently, the nanotubes cross-linked by the hydrocarbon solder produce good electrical and mechanical connections. The joint dimension was determined by the size of the electron beam, which results in a sound junction with well-defined geometry and the smallest junction size obtained so far. In situ electric measurement showed a linear current-voltage property for the multi-walled nanotube junction.

Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers

NASA Astrophysics Data System (ADS)

Chee, Kuan W. A.; Hu, Yuning

2018-07-01

There has always been an inexorable interest in the solar industry in boosting the photovoltaic conversion efficiency. This paper presents a theoretical and numerical simulation study of the effects of key design parameters on the photoelectric performance of single junction (InGaP- or GaAs-based) and dual junction (InGaP/GaAs) inorganic solar cells. The influence of base layer thickness, base doping concentration, junction temperature, back surface field layer composition and thickness, and tunnel junction material, were correlated with open circuit voltage, short-circuit current, fill factor and power conversion efficiency performance. The InGaP/GaAs dual junction solar cell was optimized with the tunnel junction and back surface field designs, yielding a short-circuit current density of 20.71 mAcm-2 , open-circuit voltage of 2.44 V and fill factor of 88.6%, and guaranteeing an optimal power conversion efficiency of at least 32.4% under 1 sun AM0 illumination even without an anti-reflective coating.

Development of a Thin-Film Solar Cell Interconnect for the Powersphere Concept

NASA Technical Reports Server (NTRS)

Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander, III; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig; Lin, John K.; Scarborough, Stephen E.

2005-01-01

Dual junction amorphous silicon (a-Si) solar cells produced on polyimide substrate have been selected as the best candidate to produce a lightweight solar array for the PowerSphere program. The PowerSphere concept features a space-inflatable, geodetic solar array approximately 0.6 meters in diameter and capable of generating about 20W of electrical power. Trade studies of various wiring concepts and connection methods led to an interconnect design with a copper contact that wraps around the edge, to the back of the solar cell. Applying Plasma Vapor Deposited (PVD) copper film to both sides and the edge of the solar cell produces the wrap around contact. This procedure results in a contact pad on the back of the solar cell, which is then laser welded to a flex circuit material. The flex circuit is constructed of copper in a custom designed routing pattern, and then sandwiched in a Kapton insulation layer. The flex circuit then serves as the primary power distribution system between the solar cells and the spacecraft. Flex circuit material is the best candidate for the wiring harness because it allows for low force deployment of the solar cells by the inflatable hinges on the PowerSphere. An additional frame structure, fabricated and assembled by ILC Dover, will reinforce the wrap around contact-flex blanket connection, thus providing a mechanically robust solar cell interconnect for the PowerSphere multifunctional program. The PowerSphere team will use the wraparound contact design approach as the primary solution for solar cell integration and the flex blanket for power distribution.

Performance analysis of high-concentrated multi-junction solar cells in hot climate

NASA Astrophysics Data System (ADS)

Ghoneim, Adel A.; Kandil, Kandil M.; Alzanki, Talal H.; Alenezi, Mohammad R.

2018-03-01

Multi-junction concentrator solar cells are a promising technology as they can fulfill the increasing energy demand with renewable sources. Focusing sunlight upon the aperture of multi-junction photovoltaic (PV) cells can generate much greater power densities than conventional PV cells. So, concentrated PV multi-junction solar cells offer a promising way towards achieving minimum cost per kilowatt-hour. However, these cells have many aspects that must be fixed to be feasible for large-scale energy generation. In this work, a model is developed to analyze the impact of various atmospheric factors on concentrator PV performance. A single-diode equivalent circuit model is developed to examine multi-junction cells performance in hot weather conditions, considering the impacts of both temperature and concentration ratio. The impacts of spectral variations of irradiance on annual performance of various high-concentrated photovoltaic (HCPV) panels are examined, adapting spectra simulations using the SMARTS model. Also, the diode shunt resistance neglected in the existing models is considered in the present model. The present results are efficiently validated against measurements from published data to within 2% accuracy. Present predictions show that the single-diode model considering the shunt resistance gives accurate and reliable results. Also, aerosol optical depth (AOD) and air mass are most important atmospheric parameters having a significant impact on HCPV cell performance. In addition, the electrical efficiency (η) is noticed to increase with concentration to a certain concentration degree after which it decreases. Finally, based on the model predictions, let us conclude that the present model could be adapted properly to examine HCPV cells' performance over a broad range of operating conditions.

Process Development for Automated Solar Cell and Module Production. Task 4: Automated Array Assembly

NASA Technical Reports Server (NTRS)

1979-01-01

A baseline sequence for the manufacture of solar cell modules was specified. Starting with silicon wafers, the process goes through damage etching, texture etching, junction formation, plasma edge etch, aluminum back surface field formation, and screen printed metallization to produce finished solar cells. The cells were then series connected on a ribbon and bonded into a finished glass tedlar module. A number of steps required additional developmental effort to verify technical and economic feasibility. These steps include texture etching, plasma edge etch, aluminum back surface field formation, array layup and interconnect, and module edge sealing and framing.

Multi-kW solar arrays for Earth orbit applications

NASA Technical Reports Server (NTRS)

1985-01-01

The multi-kW solar array program is concerned with developing the technology required to enable the design of solar arrays required to power the missions of the 1990's. The present effort required the design of a modular solar array panel consisting of superstrate modules interconnected to provide the structural support for the solar cells. The effort was divided into two tasks: (1) superstrate solar array panel design, and (2) superstrate solar array panel-to-panel design. The primary objective was to systematically investigate critical areas of the transparent superstrate solar array and evaluate the flight capabilities of this low cost approach.

Manifestation of counteracting photovoltaic effect on IV characteristics in multi-junction solar cells

NASA Astrophysics Data System (ADS)

Mintairov, M. A.; Evstropov, V. V.; Mintairov, S. A.; Shvarts, M. Z.; Kozhukhovskaia, S. A.; Kalyuzhnyy, N. A.

2017-11-01

The existence within monolithic double- and triple-junction solar cells of a photoelectric source, which counteracts the basic photovoltaic p-n junctions, is proved. The paper presents a detailed analysis of the shape of the light IV-characteristics, as well as the dependence Voc-Jsc (open circuit voltage - short-circuit current). It is established that the counteracting source is tunnel p+-n+ junction. The photoelectric characteristics of samples with different tunnel diode peak current values were investigated, including the case of a zero value. When the tunnel p+-n+ junction is photoactive, the Voc-Jsc dependence has a dropping part, including a sharp jump. This undesirable effect decreases with increasing peak current.

III-V-N materials for super high-efficiency multijunction solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Bouzazi, Boussairi; Suzuki, Hidetoshi; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio

2012-10-01

We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R&D program since FY2008. InGaAsN is one of appropriate materials for 4-or 5-junction solar cell configuration because this material can be lattice-matched to GaAs and Ge substrates. However, present InGaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers and low carrier mobility due to alloy scattering and non-homogeneity of N. This paper presents our major results in the understanding of majority and minority carrier traps in GaAsN grown by chemical beam epitaxy and their relationships with the poor electrical properties of the materials.

Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

DTIC Science & Technology

2015-08-27

photodiodes with different cutoff wavelengths connected in series with tunnel diodes between adjacent photodiodes. The LEDs optically bias the inactive...perfectly conductive n-CdTe/p-InSb tunnel junction. 15. SUBJECT TERMS optical biasing; multi-junction photodetectors; triple-junction solar cell...during this project, including initial demonstrations of optical addressing, tunnel junction studies and multicolor device characterization

Structures with three dimensional nanofences comprising single crystal segments

DOEpatents

Goyal, Amit; Wee, Sung-Hun

2013-08-27

An article includes a substrate having a surface and a nanofence supported by the surface. The nanofence includes a multiplicity of primary nanorods and branch nanorods, each of the primary nanorods being attached to said substrate, and each of the branch nanorods being attached to a primary nanorods and/or another branch nanorod. The primary and branch nanorods are arranged in a three-dimensional, interconnected, interpenetrating, grid-like network defining interstices within the nanofence. The article further includes an enveloping layer supported by the nanofence, disposed in the interstices, and forming a coating on the primary and branch nanorods. The enveloping layer has a different composition from that of the nanofence and includes a radial p-n single junction solar cell photovoltaic material and/or a radial p-n multiple junction solar cell photovoltaic material.

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

NASA Astrophysics Data System (ADS)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L.; Deceglie, Michael G.; Stradins, Paul

Three-terminal (3T) tandem cells fabricated by combining an interdigitated back contact (IBC) Si device with a wider bandgap top cell have the potential to provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects between cells. Here we develop a two dimensional device physics model to study the behavior of IBC Si solar cells operated in a 3T configuration. We investigate how different cell designs impact device performance and discuss the analysis protocol used to understand and optimize power produced from a single junction, 3T device.

On-Orbit Measurement of Next Generation Space Solar Cell Technology on the International Space Station

NASA Technical Reports Server (NTRS)

Wolford, David S.; Myers, Matthew G.; Prokop, Norman F.; Krasowski, Michael J.; Parker, David S.; Cassidy, Justin C.; Davies, William E.; Vorreiter, Janelle O.; Piszczor, Michael F.; McNatt, Jeremiah S.

2014-01-01

On-orbit measurements of new photovoltaic (PV) technologies for space power are an essential step in the development and qualification of advanced solar cells. NASA Glenn Research Center will fly and measure several solar cells attached to NASA Goddards Robotic Refueling Mission (RRM), expected to be launched in 2014. Industry and government partners have provided advanced PV devices for evaluation of performance and environmental durability. The experiment is completely self-contained, providing its own power and internal data storage. Several new cell technologies including Inverted Metamorphic Multi-junction and four-junction cells will be tested.

Temperature profiles induced by a stationary CW laser beam in a multi-layer structure - Application to solar cell interconnect welding

NASA Astrophysics Data System (ADS)

Oh, J. E.; Ianno, N. J.; Ahmed, A. U.

A three-dimensional heat transfer model for heating of a multilayer structure by a stationary Gaussian CW CO2 laser beam is developed and applied to solar cell interconnect welding. This model takes into account the temperature dependence of the thermal conductivity and diffusivity as well as free carrier absorption of the incident beam in the silicon where appropriate. Finally, the theoretical temperature profiles are used to determine the weld spot size and these values are compared to results obtained from a simple welding experiment, where excellent agreement is obtained.

Performance of High-Efficiency Advanced Triple-Junction Solar Panels for the LILT Mission Dawn

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.; Sharma, Surya; Buitrago, Oscar; Sharps, Paul R.; Blok, Ron; Kroon, Martin; Jalink, Cees; Harris, Robin; Stella, Paul; Distefano, Sal

2005-01-01

NASA's Discovery Mission Dawn is designed to (LILT) conditions. operate within the solar system's Asteroid belt, where the large distance from the sun creates a low-intensity, low-temperature (LILT) condition. To meet the mission power requirements under LlLT conditions, very high-efficiency multi-junction solar cells were selected to power the spacecraft to be built by Orbital Sciences Corporation (OSC) under contract with JPL. Emcore's InGaP/InGaAs/Ge advanced triple-junction (ATJ) solar cells, exhibiting an average air mass zero (AMO) efficiency of greater than 27.6% (one-sun, 28 C), were used to populate the solar panels [1]. The two solar array wings, to be built by Dutch Space, with 5 large- area panels each (total area of 36.4 sq. meters) are projected to produce between 10.3 kWe and 1.3 kWe of end-of life (EOL) power in the 1.0 to 3.0 AU range, respectively. The details of the solar panel design, testing and power analysis are presented.

NREL: News - Scientific American' Recognizes Solar Cell Research

Science.gov Websites

Scientific American' Recognizes Solar Cell Research Monday November 11, 2002 Magazine Names NREL to . NREL's research into multi-junction solar cells for more than a decade has led the way to ever more photovoltaic research can be found at www.nrel.gov/ncpv/. Selected by the magazine's Board of Editors, the

Transport Imaging of Multi-Junction and CIGS Solar Cell Materials

DTIC Science & Technology

2011-12-01

solar cells start with the material charge transport parameters, namely the charge mobility, lifetime and diffusion length . It is the goal of...every solar cell manufacturer to maintain high carrier lifetime so as to realize long diffusion lengths . Long diffusion lengths ensure that the charges...Thus, being able to accurately determine the diffusion length of any solar cell material proves advantageous by providing insights

Inverted Three-Junction Tandem Thermophotovoltaic Modules

NASA Technical Reports Server (NTRS)

Wojtczuk, Steven

2012-01-01

An InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell has been investigated to utilize more of the blackbody spectrum (from a 1,100 C general purpose heat source GPHS) efficiently. The tandem consists of three vertically stacked subcells, a 0.74-eV InGaAs cell, a 0.6- eV InGaAs cell, and a 0.55-eV InGaAs cell, as well as two interconnecting tunnel junctions. A greater than 20% TPV system efficiency was achieved by another group with a 1,040 C blackbody using a single-bandgap 0.6- eV InGaAs cell MIM (monolithic interconnected module) (30 lateral junctions) that delivered about 12 V/30 or 0.4 V/junction. It is expected that a three-bandgap tandem MIM will eventually have about 3 this voltage (1.15 V) and about half the current. A 4 A/cm2 would be generated by a single-bandgap 0.6-V InGaAs MIM, as opposed to the 2 A/cm2 available from the same spectrum when split among the three series-connected junctions in the tandem stack. This would then be about a 50% increase (3xVoc, 0.5xIsc) in output power if the proposed tandem replaced the single- bandgap MIM. The advantage of the innovation, if successful, would be a 50% increase in power conversion efficiency from radioisotope heat sources using existing thermophotovoltaics. Up to 50% more power would be generated for radioisotope GPHS deep space missions. This type of InGaAs multijunction stack could be used with terrestrial concentrator solar cells to increase efficiency from 41 to 45% or more.

InP tunnel junction for InGaAs/InP tandem solar cells

NASA Technical Reports Server (NTRS)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Programmability of nanowire networks

NASA Astrophysics Data System (ADS)

Bellew, A. T.; Bell, A. P.; McCarthy, E. K.; Fairfield, J. A.; Boland, J. J.

2014-07-01

Electrical connectivity in networks of nanoscale junctions must be better understood if nanowire devices are to be scaled up from single wires to functional material systems. We show that the natural connectivity behaviour found in random nanowire networks presents a new paradigm for creating multi-functional, programmable materials. In devices made from networks of Ni/NiO core-shell nanowires at different length scales, we discover the emergence of distinct behavioural regimes when networks are electrically stressed. We show that a small network, with few nanowire-nanowire junctions, acts as a unipolar resistive switch, demonstrating very high ON/OFF current ratios (>105). However, large networks of nanowires distribute an applied bias across a large number of junctions, and thus respond not by switching but instead by evolving connectivity. We demonstrate that these emergent properties lead to fault-tolerant materials whose resistance may be tuned, and which are capable of adaptively reconfiguring under stress. By combining these two behavioural regimes, we demonstrate that the same nanowire network may be programmed to act both as a metallic interconnect, and a resistive switch device with high ON/OFF ratio. These results enable the fabrication of programmable, multi-functional materials from random nanowire networks.Electrical connectivity in networks of nanoscale junctions must be better understood if nanowire devices are to be scaled up from single wires to functional material systems. We show that the natural connectivity behaviour found in random nanowire networks presents a new paradigm for creating multi-functional, programmable materials. In devices made from networks of Ni/NiO core-shell nanowires at different length scales, we discover the emergence of distinct behavioural regimes when networks are electrically stressed. We show that a small network, with few nanowire-nanowire junctions, acts as a unipolar resistive switch, demonstrating very high ON/OFF current ratios (>105). However, large networks of nanowires distribute an applied bias across a large number of junctions, and thus respond not by switching but instead by evolving connectivity. We demonstrate that these emergent properties lead to fault-tolerant materials whose resistance may be tuned, and which are capable of adaptively reconfiguring under stress. By combining these two behavioural regimes, we demonstrate that the same nanowire network may be programmed to act both as a metallic interconnect, and a resistive switch device with high ON/OFF ratio. These results enable the fabrication of programmable, multi-functional materials from random nanowire networks. Electronic supplementary information (ESI) available: Nanowire statistics (length, diameter statistics, and oxide thickness) are provided. Forming curves for single junctions and networks. Passive voltage contrast image demonstrating selectivity of conductive pathways in 100 μm network. See DOI: 10.1039/c4nr02338b

Strain-balanced type-II superlattices for efficient multi-junction solar cells.

PubMed

Gonzalo, A; Utrilla, A D; Reyes, D F; Braza, V; Llorens, J M; Fuertes Marrón, D; Alén, B; Ben, T; González, D; Guzman, A; Hierro, A; Ulloa, J M

2017-06-21

Multi-junction solar cells made by assembling semiconductor materials with different bandgap energies have hold the record conversion efficiencies for many years and are currently approaching 50%. Theoretical efficiency limits make use of optimum designs with the right lattice constant-bandgap energy combination, which requires a 1.0-1.15 eV material lattice-matched to GaAs/Ge. Nevertheless, the lack of suitable semiconductor materials is hindering the achievement of the predicted efficiencies, since the only candidates were up to now complex quaternary and quinary alloys with inherent epitaxial growth problems that degrade carrier dynamics. Here we show how the use of strain-balanced GaAsSb/GaAsN superlattices might solve this problem. We demonstrate that the spatial separation of Sb and N atoms avoids the ubiquitous growth problems and improves crystal quality. Moreover, these new structures allow for additional control of the effective bandgap through the period thickness and provide a type-II band alignment with long carrier lifetimes. All this leads to a strong enhancement of the external quantum efficiency under photovoltaic conditions with respect to bulk layers of equivalent thickness. Our results show that GaAsSb/GaAsN superlattices with short periods are the ideal (pseudo)material to be integrated in new GaAs/Ge-based multi-junction solar cells that could approach the theoretical efficiency limit.

Calculation of near optimum design of InP/In(0.53)Ga(0.47)As monolithic tandem solar cells

NASA Technical Reports Server (NTRS)

Renaud, P.; Vilela, M. F.; Freundlich, A.; Medelci, N.; Bensaoula, A.

1994-01-01

An analysis of InP/GaAs tandem solar cell structure has been undertaken to allow for maximum AMO conversion efficiencies (space applications) while still taking into account both the theoretical and technological limitations. The dependence of intrinsic and extrinsic parameters such as diffusion lengths and generation-recombination (GR) lifetimes on N/P and P/N devices performances are clearly demonstrated. We also report for the first time the improvement attainable through the use of a new patterned tunnel junction as the inter cell ohmic interconnect. Such a design minimizes the light absorption in the interconnect region and leads to a noticeable increase in the cell efficiency. Our computations predict 27 percent AMO efficiency for N/P tandems with ideality factor gamma = 2 (GR lifetimes approximately equal 1 micron), and 36 percent for gamma = 1 (GR lifetimes approximately equals 100 microns). The method of optimization and the values of the physical and optical parameters are discussed.

Low temperature perovskite solar cells with an evaporated TiO 2 compact layer for perovskite silicon tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bett, Alexander J.; Schulze, Patricia S. C.; Winkler, Kristina

Silicon-based tandem solar cells can overcome the efficiency limit of single junction silicon solar cells. Perovskite solar cells are particularly promising as a top cell in monolithic tandem devices due to their rapid development towards high efficiencies, a tunable band gap with a sharp optical absorption edge and a simple production process. In monolithic tandem devices, the perovskite solar cell is deposited directly on the silicon cell, requiring low-temperature processes (< 200 °C) to maintain functionality of under-lying layers of the silicon cell in case of highly efficient silicon hetero-junction (SHJ) bottom solar cell. In this work, we present amore » complete low-temperature process for perovskite solar cells including a mesoporous titanium oxide (TiO 2) scaffold - a structure yielding the highest efficiencies for single-junction perovskite solar cells. We show that evaporation of the compact TiO 2 hole blocking layer and ultra-violet (UV) curing for the mesoporous TiO 2 layer allows for good performance, comparable to high-temperature (> 500 °C) processes. With both manufacturing routes, we obtain short-circuit current densities (J SC) of about 20 mA/cm 2, open-circuit voltages (V OC) over 1 V, fill factors (FF) between 0.7 and 0.8 and efficiencies (n) of more than 15%. We further show that the evaporated TiO 2 layer is suitable for the application in tandem devices. The series resistance of the layer itself and the contact resistance to an indium doped tin oxide (ITO) interconnection layer between the two sub-cells are low. Additionally, the low parasitic absorption for wavelengths above the perovskite band gap allow a higher absorption in the silicon bottom solar cell, which is essential to achieve high tandem efficiencies.« less

Low temperature perovskite solar cells with an evaporated TiO 2 compact layer for perovskite silicon tandem solar cells

DOE PAGES

Bett, Alexander J.; Schulze, Patricia S. C.; Winkler, Kristina; ...

2017-09-21

Silicon-based tandem solar cells can overcome the efficiency limit of single junction silicon solar cells. Perovskite solar cells are particularly promising as a top cell in monolithic tandem devices due to their rapid development towards high efficiencies, a tunable band gap with a sharp optical absorption edge and a simple production process. In monolithic tandem devices, the perovskite solar cell is deposited directly on the silicon cell, requiring low-temperature processes (< 200 °C) to maintain functionality of under-lying layers of the silicon cell in case of highly efficient silicon hetero-junction (SHJ) bottom solar cell. In this work, we present amore » complete low-temperature process for perovskite solar cells including a mesoporous titanium oxide (TiO 2) scaffold - a structure yielding the highest efficiencies for single-junction perovskite solar cells. We show that evaporation of the compact TiO 2 hole blocking layer and ultra-violet (UV) curing for the mesoporous TiO 2 layer allows for good performance, comparable to high-temperature (> 500 °C) processes. With both manufacturing routes, we obtain short-circuit current densities (J SC) of about 20 mA/cm 2, open-circuit voltages (V OC) over 1 V, fill factors (FF) between 0.7 and 0.8 and efficiencies (n) of more than 15%. We further show that the evaporated TiO 2 layer is suitable for the application in tandem devices. The series resistance of the layer itself and the contact resistance to an indium doped tin oxide (ITO) interconnection layer between the two sub-cells are low. Additionally, the low parasitic absorption for wavelengths above the perovskite band gap allow a higher absorption in the silicon bottom solar cell, which is essential to achieve high tandem efficiencies.« less

Understanding/Modelling of Thermal and Radiation Benefits of Quantum Dot Solar Cells

DTIC Science & Technology

2008-07-11

GaAs solar cells have been investigated. Strain compensation is a key step in realizing high- efficiency quantum dots solar cells (QDSC). InAs...factor. A strong correlation between the temperature dependent quantum dot electroluminescence peak emission wavelength and the sub-GaAs bandgap...increased efficiency and radiation resistance devices. The incorporation of quantum dots (QDs) into traditional single or multi-junction crystalline solar

Experimental Study of Arcing on High-voltage Solar Arrays

NASA Technical Reports Server (NTRS)

Vayner, Boris; Galofaro, Joel; Ferguson, Dale

2005-01-01

The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism [1-4] suggests that such modifications can be done in the following directions: i) to insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); ii) to change a coverglass geometry (overhang); iii) to increase a coverglass thickness; iiii) to outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that simulates the LEO operational temperature. The experimental setup is described below.

Experimental Study of Arcing on High-Voltage Solar Arrays

NASA Technical Reports Server (NTRS)

Vayner, Boris; Galofaro, Joel; Ferguson, Dale

2003-01-01

The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism suggests that such modifications can be done in the following directions: 1) To insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); 2) To change a coverglass geometry (overhang); 3) To increase a coverglass thickness; 4) To outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in a large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that stimulates the LEO operational temperature. The experimental setup is described below.

30% CPV Module Milestone

NASA Astrophysics Data System (ADS)

Gordon, Robert; Kinsey, Geoff; Nayaak, Adi; Garboushian, Vahan

2010-10-01

Concentrating Photovoltaics has held out the promise of low cost solar electricity for now several decades. Steady progress towards this goal in the 80's and 90's gradually produced more efficient and reliable systems. System efficiency is regarded as the largest factor in lowering the electricity cost and the relatively recent advent of the terrestrial multi-junction solar cell has pressed this race forward dramatically. CPV systems are now exhibiting impressive AC field efficiencies of 25% and more, approximately twice that of the best flat plate systems available today. Amonix inc. has just tested their latest generation multi-junction module design, achieving over 31% DC efficiency at near PVUSA test conditions. Inculcating this design into their next MegaModule is forthcoming, but the expected AC system field efficiency should be significantly higher than current 25% levels.

Simulation and optimization performance of GaAs/GaAs0.5Sb0.5/GaSb mechanically stacked tandem solar cells

NASA Astrophysics Data System (ADS)

Tayubi, Y. R.; Suhandi, A.; Samsudin, A.; Arifin, P.; Supriyatman

2018-05-01

Different approaches have been made in order to reach higher solar cells efficiencies. Concepts for multilayer solar cells have been developed. This can be realised if multiple individual single junction solar cells with different suitably chosen band gaps are connected in series in multi-junction solar cells. In our work, we have simulated and optimized solar cells based on the system mechanically stacked using computer simulation and predict their maximum performance. The structures of solar cells are based on the single junction GaAs, GaAs0.5Sb0.5 and GaSb cells. We have simulated each cell individually and extracted their optimal parameters (layer thickness, carrier concentration, the recombination velocity, etc), also, we calculated the efficiency of each cells optimized by separation of the solar spectrum in bands where the cell is sensible for the absorption. The optimal values of conversion efficiency have obtained for the three individual solar cells and the GaAs/GaAs0.5Sb0.5/GaSb tandem solar cells, that are: η = 19,76% for GaAs solar cell, η = 8,42% for GaAs0,5Sb0,5 solar cell, η = 4, 84% for GaSb solar cell and η = 33,02% for GaAs/GaAs0.5Sb0.5/GaSb tandem solar cell.

Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

NASA Astrophysics Data System (ADS)

Yeh, Li-Ko; Tian, Wei-Cheng; Lai, Kun-Yu; He-Hau, Jr.

2016-12-01

GaInP/GaAs/Ge triple-junction concentrator solar cells with significant efficiency enhancement were demonstrated with antireflective ZnO nanoneedles. The novel nanostructure was attained with a Zn(NO3)2-based solution containing vitamin C. Under one sun AM 1.5G solar spectrum, conversion efficiency of the triple-junction device was improved by 23.7% via broadband improvement in short-circuit currents of 3 sub-cells after the coverage by the nanoneedles with a graded refractive index profile. The efficiency enhancement further went up to 45.8% at 100 suns. The performance boost through the nanoneedles also became increasingly pronounced in the conditions of high incident angles and the cloudy weather, e.g. 220.0% of efficiency enhancement was observed at the incident angle of 60°. These results were attributed to the exceptional broadband omnidirectionality of the antireflective nanoneedles.

Bypass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie; Wu, Gordon

2016-01-01

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with coupon back side thermal conditions of both cold and ambient. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, experiment results, and the thermal model.

By-Pass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2016-01-01

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with cold and ambient coupon back-side. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, including the calibration of the thermal imaging system, and the results.

Spectrum splitting using multi-layer dielectric meta-surfaces for efficient solar energy harvesting

NASA Astrophysics Data System (ADS)

Yao, Yuhan; Liu, He; Wu, Wei

2014-06-01

We designed a high-efficiency dispersive mirror based on multi-layer dielectric meta-surfaces. By replacing the secondary mirror of a dome solar concentrator with this dispersive mirror, the solar concentrator can be converted into a spectrum-splitting photovoltaic system with higher energy harvesting efficiency and potentially lower cost. The meta-surfaces are consisted of high-index contrast gratings (HCG). The structures and parameters of the dispersive mirror (i.e. stacked HCG) are optimized based on finite-difference time-domain and rigorous coupled-wave analysis method. Our numerical study shows that the dispersive mirror can direct light with different wavelengths into different angles in the entire solar spectrum, maintaining very low energy loss. Our approach will not only improve the energy harvesting efficiency, but also lower the cost by using single junction cells instead of multi-layer tandem solar cells. Moreover, this approach has the minimal disruption to the existing solar concentrator infrastructures.

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

Towards improved photovoltaic conversion using dilute magnetic semiconductors (abstract only)

NASA Astrophysics Data System (ADS)

Olsson, Pär; Guillemoles, J.-F.; Domain, C.

2008-02-01

Present photovoltaic devices, based on p/n junctions, are limited from first principles to maximal efficiencies of 31% (40% under full solar concentration; Shockley and Queisser 1961 J. Appl. Phys. 32 510). However, more innovative schemes may overcome the Shockley-Queisser limit since the theoretical maximal efficiency of solar energy conversion is higher than 85% (Harder and Würfel 2003 Semicond. Sci. Technol. 18 S151). To date, the only practical realization of such an innovative scheme has been multi-junction devices, which at present hold the world record for efficiency at nearly 41% at significant solar concentration (US DOE news site: http://www.energy.gov/news/4503.htm). It has been proposed that one could make use of the solar spectrum in much the same way as the multi-junction devices do but in a single cell, using impurity induced intermediate levels to create gaps of different sizes. This intermediate level semiconductor (ILSC) concept (Green and Wenham 1994 Appl. Phys. Lett. 65 2907; Luque and Martí1997 Phys. Rev. Lett. 78 5014) has a maximal efficiency similar to that of multi-junction devices but suffers from prohibitively large non-radiative recombination rates. We here propose to use a ferromagnetic impurity scheme in order to reduce the non-radiative recombination rates while maintaining the high theoretical maximum efficiency of the ILSC scheme, that is about 46%. Using density functional theory calculations, the electronic and energetic properties of transition metal impurities for a wide range of semiconductors have been analysed. Of the several hundred compounds studied, only a few fulfil the design criteria that we present here. As an example, wide gap AlP is one of the most promising compounds. It was found that inclusion of significant amounts of Mn in AlP induces band structures providing conversion efficiencies potentially close to the theoretical maximum, with an estimated Curie temperature reaching above 100 K.

Research on the method of establishing the total radiation meter calibration device

NASA Astrophysics Data System (ADS)

Gao, Jianqiang; Xia, Ming; Xia, Junwen; Zhang, Dong

2015-10-01

Pyranometer is an instrument used to measure the solar radiation, according to pyranometer differs as installation state, can be respectively measured total solar radiation, reflected radiation, or with the help of shading device for measuring scattering radiation. Pyranometer uses the principle of thermoelectric effect, inductive element adopts winding plating type multi junction thermopile, its surface is coated with black coating with high absorption rate. Hot junction in the induction surface, while the cold junction is located in the body, the cold and hot junction produce thermoelectric potential. In the linear range, the output signal is proportional to the solar irradiance. Traceability to national meteorological station, as the unit of the national legal metrology organizations, the responsibility is to transfer value of the sun and the earth radiation value about the national meteorological industry. Using the method of comparison, with indoor calibration of solar simulator, at the same location, standard pyranometer and measured pyranometer were alternately measured radiation irradiance, depending on the irradiation sensitivity standard pyranometer were calculated the radiation sensitivity of measured pyranometer. This paper is mainly about the design and calibration method of the pyranometer indoor device. The uncertainty of the calibration result is also evaluated.

Report on Project to Characterize Multi-Junction Solar Cells in the Stratosphere using Low-Cost Balloon and Communication Technologies

NASA Technical Reports Server (NTRS)

Mirza, Ali; Sant, David; Woodyard, James R.; Johnston, Richard R.; Brown, William J.

2002-01-01

Balloon, control and communication technologies are under development in our laboratory for testing multi-junction solar cells in the stratosphere to achieve near AM0 conditions. One flight, Suntracker I, has been carried out reported earlier. We report on our efforts in preparation for a second flight, Suntracker II, that was aborted due to hardware problems. The package for Suntracker I system has been modified to include separate electronics and battery packs for the 70 centimeter and 2 meter systems. The collimator control system and motor gearboxes have been redesigned to address problems with the virtual stops and backlash. Surface mount technology on a printed circuit board was used in place of the through-hole prototype circuit in efforts to reduce weight and size, and improve reliability. A mobile base station has been constructed that includes a 35' tower with a two axis rotator and multi-element yagi antennas. Modifications in Suntracker I and the factors that lead to aborting Suntracker II are discussed.

Holographic spectrum-splitting optical systems for solar photovoltaics

NASA Astrophysics Data System (ADS)

Zhang, Deming

Solar energy is the most abundant source of renewable energy available. The relatively high cost prevents solar photovoltaic (PV) from replacing fossil fuel on a larger scale. In solar PV power generation the cost is reduced with more efficient PV technologies. In this dissertation, methods to improve PV conversion efficiency with holographic optical components are discussed. The tandem multiple-junction approach has achieved very high conversion efficiency. However it is impossible to manufacture tandem PV cells at a low cost due to stringent fabrication standards and limited material types that satisfy lattice compatibility. Current produced by the tandem multi-junction PV cell is limited by the lowest junction due to series connection. Spectrum-splitting is a lateral multi-junction concept that is free of lattice and current matching constraints. Each PV cell can be optimized towards full absorption of a spectral band with tailored light-trapping schemes. Holographic optical components are designed to achieve spectrum-splitting PV energy conversion. The incident solar spectrum is separated onto multiple PV cells that are matched to the corresponding spectral band. Holographic spectrum-splitting can take advantage of existing and future low-cost technologies that produces high efficiency thin-film solar cells. Spectrum-splitting optical systems are designed and analyzed with both transmission and reflection holographic optical components. Prototype holograms are fabricated and high optical efficiency is achieved. Light-trapping in PV cells increases the effective optical path-length in the semiconductor material leading to improved absorption and conversion efficiency. It has been shown that the effective optical path length can be increased by a factor of 4n2 using diffusive surfaces. Ultra-light-trapping can be achieved with optical filters that limit the escape angle of the diffused light. Holographic reflection gratings have been shown to act as angle-wavelength selective filters that can function as ultra-light-trapping filters. Results from an experimental reflection hologram are used to model the absorption enhancement factor for a silicon solar cell and light-trapping filter. The result shows a significant improvement in current generation for thin-film silicon solar cells under typical operating conditions.

In-Situ Optical Imaging of Carrier Transport in Multilayer Solar Cells

DTIC Science & Technology

2008-06-01

5 1. Efficiency Considerations....................................................... 5 2. Construction...improved efficiency solar cells. The need to move forward on these improvements is driven by the increasing price of oil and other traditional fuels...any improvement in material in a high efficiency multi-junction cell can be difficult to mathematically model, and much effort is involved in

State-of-the-art Architectures and Technologies of High-Efficiency Solar Cells Based on III-V Heterostructures for Space and Terrestrial Applications

NASA Astrophysics Data System (ADS)

Pakhanov, N. A.; Andreev, V. M.; Shvarts, M. Z.; Pchelyakov, O. P.

2018-03-01

Multi-junction solar cells based on III-V compounds are the most efficient converters of solar energy to electricity and are widely used in space solar arrays and terrestrial photovoltaic modules with sunlight concentrators. All modern high-efficiency III-V solar cells are based on the long-developed triple-junction III-V GaInP/GaInAs/Ge heterostructure and have an almost limiting efficiency for a given architecture — 30 and 41.6% for space and terrestrial concentrated radiations, respectively. Currently, an increase in efficiency is achieved by converting from the 3-junction to the more efficient 4-, 5-, and even 6-junction III-V architectures: growth technologies and methods of post-growth treatment of structures have been developed, new materials with optimal bandgaps have been designed, and crystallographic parameters have been improved. In this review, we consider recent achievements and prospects for the main directions of research and improvement of architectures, technologies, and materials used in laboratories to develop solar cells with the best conversion efficiency: 35.8% for space, 38.8% for terrestrial, and 46.1% for concentrated sunlight. It is supposed that by 2020, the efficiency will approach 40% for direct space radiation and 50% for concentrated terrestrial solar radiation. This review considers the architecture and technologies of solar cells with record-breaking efficiency for terrestrial and space applications. It should be noted that in terrestrial power plants, the use of III-V SCs is economically advantageous in systems with sunlight concentrators.

A differential spectral responsivity measurement system constructed for determining of the spectral responsivity of a single- and triple-junction photovoltaic cells

NASA Astrophysics Data System (ADS)

Sametoglu, Ferhat; Celikel, Oguz; Witt, Florian

2017-10-01

A differential spectral responsivity (DSR) measurement system has been designed and constructed at National Metrology Institute of Turkey (TUBITAK UME) to determine the spectral responsivity (SR) of a single- or a multi-junction photovoltaic device (solar cell). The DSR setup contains a broad band light bias source composed of a constructed Solar Simulator based on a 1000 W Xe-arc lamp owning a AM-1.5 filter and 250 W quartz-tungsten-halogen lamp, a designed and constructed LED-based Bias Light Sources, a DC voltage bias circuit, and a probe beam optical power tracking and correction circuit controlled with an ADuC847 microcontroller card together with an embedded C based software, designed and constructed in TUBITAK UME under this project. By using the constructed DSR measurement system, the SR calibration of solar cells, the monolitic triple-junction solar cell GaInP/GaInAs/Ge and its corresponding component cells have been performed within the EURAMET Joint Research Project SolCell.

GaAs/InAs Multi Quantum Well Solar Cell

DTIC Science & Technology

2012-12-01

excited states, which explains the temperature dependence of these materials and the thermoelectric or Seebeck effect. 5 Figure 4. Temperature...dependence of conductivity [from Ref. 1] The thermoelectric field E is given by the equation: dTE Q dx  (1) where Q= thermoelectric ...G. JUNCTIONS A photovoltaic cell is a basic a pn-junction diode where p-type and n-type semiconductors are combined, as shown in Figure 17

Development of a Novel Hybrid Multi-Junction Architecture for Silicon Solar Cells

DTIC Science & Technology

2015-03-26

W Watts KOH Potassium Hydroxide xj Junction depth k Thermal conductivity z Normal distance l Conductor length σ Stefan...outermost orbit [9]. A material conducts electricity when its valence electrons move into the conduction band and become conductor electrons. Conductor ...become a conductor , it must absorb enough energy to overcome the band gap, which is the energy difference between the valence band and the conduction

Automated Array Assembly, Phase 2

NASA Technical Reports Server (NTRS)

Carbajal, B. G.

1979-01-01

The Automated Array Assembly Task, Phase 2 of the Low Cost Silicon Solar Array Project is a process development task. The contract provides for the fabrication of modules from large area tandem junction cells (TJC). During this quarter, effort was focused on the design of a large area, approximately 36 sq cm, TJC and process verification runs. The large area TJC design was optimized for minimum I squared R power losses. In the TJM activity, the cell-module interfaces were defined, module substrates were formed and heat treated and clad metal interconnect strips were fabricated.

Gap/silicon Tandem Solar Cell with Extended Temperature Range

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A. (Inventor)

2006-01-01

A two-junction solar cell has a bottom solar cell junction of crystalline silicon, and a top solar cell junction of gallium phosphide. A three (or more) junction solar cell has bottom solar cell junctions of silicon, and a top solar cell junction of gallium phosphide. The resulting solar cells exhibit improved extended temperature operation.

Sputtered Metal Oxide Broken Gap Junctions for Tandem Solar Cells

NASA Astrophysics Data System (ADS)

Johnson, Forrest

Broken gap metal oxide junctions have been created for the first time by sputtering using ZnSnO3 for the n-type material and Cu 2O or CuAlO2 for the p-type material. Films were sputtered from either ceramic or metallic targets at room temperature from 10nm to 220nm thick. The band structure of the respective materials have theoretical work functions which line up with the band structure for tandem CIAGS/CIGS solar cell applications. Multiple characterization methods demonstrated consistent ohmic I-V profiles for devices on rough surfaces such as ITO/glass and a CIAGS cell. Devices with total junction specific contact resistance of under 0.001 Ohm-cm2 have been achieved with optical transmission close to 100% using 10nm films. Devices showed excellent stability up to 600°C anneals over 1hr using ZnSnO3 and CuAlO2. These films were also amorphous -a great diffusion barrier during top cell growth at high temperatures. Rapid Thermal Anneal (RTA) demonstrated the ability to shift the band structure of the whole device, allowing for tuning it to align with adjacent solar layers. These results remove a key barrier for mass production of multi-junction thin film solar cells.

NREL/Boeing Spectrolab Team Wins Research and Development Award | News |

Science.gov Websites

approach represents a powerful new technology for designing super-efficient multi-junction solar cells. The results in superior electrical performance. But, with the HEMM approach, the atoms are unevenly spaced

Modeling Laser Effects on Multi-Junction Solar Cells Using Silvaco ATLAS Software for Spacecraft Power Beaming Applications

DTIC Science & Technology

2010-06-01

could not. Figure 11 shows the Indium Gallium Phosphide (InGaP)- Gallium Arsenide (GaAs)- Germanium (Ge) solar cell utilization of the solar spectrum...2 opcv nL  (4.4) p = 1, 2, 3, … nr = index of refraction of the cavity co = speed of light in a vacuum (m/s) L = cavity length (meters...illumination – ηsolar  Efficiency under solar illumination – n Number of electrons – nr Index of refraction –  Photon frequency Hz ΔFSR

Sarah Kurtz | NREL

Science.gov Websites

next stage of growth for the PV industry. Participated in the demonstration of the GaInP/GaAs solar photovoltaics (PV), concentrator PV, and PV reliability. Kurtz and NREL colleague Jerry Olson championed the early use of multi-junction solar cells by showing that a top cell of gallium indium phosphide (GaInP

Semiconductor solar cells: Recent progress in terrestrial applications

NASA Astrophysics Data System (ADS)

Avrutin, V.; Izyumskaya, N.; Morkoç, H.

2011-04-01

In the last decade, the photovoltaic industry grew at a rate exceeding 30% per year. Currently, solar-cell modules based on single-crystal and large-grain polycrystalline silicon wafers comprise more than 80% of the market. Bulk Si photovoltaics, which benefit from the highly advanced growth and fabrication processes developed for microelectronics industry, is a mature technology. The light-to-electric power conversion efficiency of the best modules offered on the market is over 20%. While there is still room for improvement, the device performance is approaching the thermodynamic limit of ˜28% for single-junction Si solar cells. The major challenge that the bulk Si solar cells face is, however, the cost reduction. The potential for price reduction of electrical power generated by wafer-based Si modules is limited by the cost of bulk Si wafers, making the electrical power cost substantially higher than that generated by combustion of fossil fuels. One major strategy to bring down the cost of electricity generated by photovoltaic modules is thin-film solar cells, whose production does not require expensive semiconductor substrates and very high temperatures and thus allows decreasing the cost per unit area while retaining a reasonable efficiency. Thin-film solar cells based on amorphous, microcrystalline, and polycrystalline Si as well as cadmium telluride and copper indium diselenide compound semiconductors have already proved their commercial viability and their market share is increasing rapidly. Another avenue to reduce the cost of photovoltaic electricity is to increase the cell efficiency beyond the Shockley-Queisser limit. A variety of concepts proposed along this avenue forms the basis of the so-called third generation photovoltaics technologies. Among these approaches, high-efficiency multi-junction solar cells based on III-V compound semiconductors, which initially found uses in space applications, are now being developed for terrestrial applications. In this article, we discuss the progress, outstanding problems, and environmental issues associated with bulk Si, thin-film, and high-efficiency multi-junction solar cells.

Electrostatic Discharge Test of Multi-Junction Solar Array Coupons After Combined Space Environmental Exposures

NASA Technical Reports Server (NTRS)

Wright, Kenneth H.; Schneider, Todd; Vaughn, Jason; Hoang, Bao; Funderburk, Victor V.; Wong, Frankie; Gardiner, George

2010-01-01

A set of multi-junction GaAs/Ge solar array test coupons were subjected to a sequence of 5-year increments of combined environmental exposure tests. The test coupons capture an integrated design intended for use in a geosynchronous (GEO) space environment. A key component of this test campaign is conducting electrostatic discharge (ESD) tests in the inverted gradient mode. The protocol of the ESD tests is based on the ISO/CD 11221, the ISO standard for ESD testing on solar array panels. This standard is currently in its final review with expected approval in 2010. The test schematic in the ISO reference has been modified with Space System/Loral designed circuitry to better simulate the on-orbit operational conditions of its solar array design. Part of the modified circuitry is to simulate a solar array panel coverglass flashover discharge. All solar array coupons used in the test campaign consist of 4 cells. The ESD tests are performed at the beginning of life (BOL) and at each 5-year environment exposure point. The environmental exposure sequence consists of UV radiation, electron/proton particle radiation, thermal cycling, and ion thruster plume. This paper discusses the coverglass flashover simulation, ESD test setup, and the importance of the electrical test design in simulating the on-orbit operational conditions. Results from 5th-year testing are compared to the baseline ESD characteristics determined at the BOL condition.

Interfacial Materials for Organic Solar Cells: Recent Advances and Perspectives

PubMed Central

Yin, Zhigang; Wei, Jiajun

2016-01-01

Organic solar cells (OSCs) have shown great promise as low‐cost photovoltaic devices for solar energy conversion over the past decade. Interfacial engineering provides a powerful strategy to enhance efficiency and stability of OSCs. With the rapid advances of interface layer materials and active layer materials, power conversion efficiencies (PCEs) of both single‐junction and tandem OSCs have exceeded a landmark value of 10%. This review summarizes the latest advances in interfacial layers for single‐junction and tandem OSCs. Electron or hole transporting materials, including metal oxides, polymers/small‐molecules, metals and metal salts/complexes, carbon‐based materials, organic‐inorganic hybrids/composites, and other emerging materials, are systemically presented as cathode and anode interface layers for high performance OSCs. Meanwhile, incorporating these electron‐transporting and hole‐transporting layer materials as building blocks, a variety of interconnecting layers for conventional or inverted tandem OSCs are comprehensively discussed, along with their functions to bridge the difference between adjacent subcells. By analyzing the structure–property relationships of various interfacial materials, the important design rules for such materials towards high efficiency and stable OSCs are highlighted. Finally, we present a brief summary as well as some perspectives to help researchers understand the current challenges and opportunities in this emerging area of research. PMID:27812480

Recent progress of Spectrolab high-efficiency space solar cells

NASA Astrophysics Data System (ADS)

Law, Daniel C.; Boisvert, J. C.; Rehder, E. M.; Chiu, P. T.; Mesropian, S.; Woo, R. L.; Liu, X. Q.; Hong, W. D.; Fetzer, C. M.; Singer, S. B.; Bhusari, D. M.; Edmondson, K. M.; Zakaria, A.; Jun, B.; Krut, D. D.; King, R. R.; Sharma, S. K.; Karam, N. H.

2013-09-01

Recent progress in III-V multijunction space solar cell has led to Spectrolab's GaInP/GaAs/Ge triple-junction, XTJ, cells with average 1-sun efficiency of 29% (AM0, 28°C) for cell size ranging from 59 to 72-cm2. High-efficiency inverted metamorphic (IMM) multijunction cells are developed as the next space solar cell architecture. Spectrolab's large-area IMM3J and IMM4J cells have achieved 33% and 34% 1-sun, AM0 efficiencies, respectively. The IMM3J and the IMM4J cells have both demonstrated normalized power retention of 0.86 at 5x1014 e-/cm2 fluence and 0.83 and 0.82 at 1x1015 e-/cm2 fluence post 1-MeV electron radiation, respectively. The IMM cells were further assembled into coverglass-interconnect-cell (CIC) strings and affixed to typical rigid aluminum honeycomb panels for thermal cycling characterization. Preliminary temperature cycling data of two coupons populated with IMM cell strings showed no performance degradation. Spectrolab has also developed semiconductor bonded technology (SBT) where highperformance component subcells were grown on GaAs and InP substrates separately then bonded directly to form the final multijunction cells. Large-area SBT 5-junction cells have achieved a 35.1% efficiency under 1-sun, AM0 condition.

Vacuum MOCVD fabrication of high efficience cells

NASA Technical Reports Server (NTRS)

Partain, L. D.; Fraas, L. M.; Mcleod, P. S.; Cape, J. A.

1985-01-01

Vacuum metal-organic-chemical-vapor-deposition (MOCVD) is a new fabrication process with improved safety and easier scalability due to its metal rather than glass construction and its uniform multiport gas injection system. It uses source materials more efficiently than other methods because the vacuum molecular flow conditions allow the high sticking coefficient reactants to reach the substrates as undeflected molecular beams and the hot chamber walls cause the low sticking coefficient reactants to bounce off the walls and interact with the substrates many times. This high source utilization reduces the materials costs power device and substantially decreases the amounts of toxic materials that must be handled as process effluents. The molecular beams allow precise growth control. With improved source purifications, vacuum MOCVD has provided p GaAs layers with 10-micron minority carrier diffusion lengths and GaAs and GaAsSb solar cells with 20% AMO efficiencies at 59X and 99X sunlight concentration ratios. Mechanical stacking has been identified as the quickest, most direct and logical path to stacked multiple-junction solar cells that perform better than the best single-junction devices. The mechanical stack is configured for immediate use in solar arrays and allows interconnections that improve the system end-of-life performance in space.

Thermal management approaches of Cu(In x ,Ga1-x )Se2 micro-solar cells

NASA Astrophysics Data System (ADS)

Sancho-Martínez, Diego; Schmid, Martina

2017-11-01

Concentrator photovoltaics (CPV) is a cost-effective method for generating electricity in regions that have a large fraction of direct solar radiation. With the help of lenses, sunlight is concentrated onto miniature, highly efficient multi-junction solar cells with a photovoltaic performance above 40%. To ensure illumination with direct radiation, CPV modules must be installed on trackers to follow the sun’s path. However, the costs of huge concentration optics and the photovoltaic technology used, narrow the market possibilities for CPV technology. Efforts to reduce these costs are being undertaken by the promotion of Cu(In x ,Ga1-x )Se2 solar cells to take over the high cost multi-junction solar cells and implementing more compact devices by minimization of solar cell area. Micrometer-sized absorbers have the potential of low cost, high efficiencies and good thermal dissipation under concentrated illumination. Heat dissipation at low (<10×) to medium (10  ×  to 100×) flux density distributions is the key point of high concentration studies for macro- and micro-sized solar cells (from 1 µm2 to 1 mm2). To study this thermal process and to optimize it, critical parameters must be taken in account: absorber area, substrate area and thickness, structure design, heat transfer mechanism, concentration factor and illumination profile. A close study on them will be carried out to determine the best structure to enhance and reach the highest possible thermal management pointing to an efficiency improvement.

Device Modeling and Characterization for CIGS Solar Cells

NASA Astrophysics Data System (ADS)

Song, Sang Ho

We studied the way to achieve high efficiency and low cost of CuIn1-xGaxSe2 (CIGS) solar cells. The Fowler-Nordheim (F-N) tunneling currents at low bias decreased the shunt resistances and degraded the fill factor and efficiency. The activation energies of majority traps were directly related with F-N tunneling currents by the energy barriers. Air anneals decreased the efficiency from 7.74% to 5.18% after a 150 °C, 1000 hour anneal. The decrease of shunt resistance due to F-N tunneling and the increase of series resistance degrade the efficiencies of solar cells. Air anneal reduces the free carrier densities by the newly generated Cu interstitial defects (Cui). Mobile Cui defects induce the metastability in CIGS solar cell. Since oxygen atoms are preferred to passivate the Se vacancies thus Cu interstitial defects explains well metastability of CIGS solar cells. Lattice mismatch and misfit stress between layers in CIGS solar cells can explain the particular effects of CIGS solar cells. The misfits of 35.08° rotated (220/204) CIGS to r-plane (102) MoSe2 layers are 1% ˜ -4% lower than other orientation and the lattice constants of two layers in short direction are matched at Ga composition x=0.35. This explains well the preferred orientation and the maximum efficiency of Ga composition effects. Misfit between CIGS and CdS generated the dislocations in CdS layer as the interface traps. Thermionic emission currents due to interface traps limit the open circuit voltage at high Ga composition. The trap densities were calculated by critical thickness and dislocation spacing and the numerical device simulation results were well matched with the experimental results. A metal oxide broken-gap p-n heterojunction is suggested for tunnel junction for multi-junction polycrystalline solar cells and we examined the characteristics of broken-gap tunnel junction by numerical simulation. Ballistic transport mechanism explains well I-V characteristics of broken-gap junction. P-type Cu2O and n-type In2O3 broken-gap heterojunction is effective with the CIGS tandem solar cells. The junction has linear I-V characteristics with moderate carrier concentration (2x1017 cm-3) and the resistance is lower than GaAs tunnel junction. The efficiency of a CGS/CIS tandem solar cells was 24.1% with buffer layers. And no significant degradations are expected due to broken gap junction.

A Newton-Raphson Method Approach to Adjusting Multi-Source Solar Simulators

NASA Technical Reports Server (NTRS)

Snyder, David B.; Wolford, David S.

2012-01-01

NASA Glenn Research Center has been using an in house designed X25 based multi-source solar simulator since 2003. The simulator is set up for triple junction solar cells prior to measurements b y adjusting the three sources to produce the correct short circuit current, lsc, in each of three AM0 calibrated sub-cells. The past practice has been to adjust one source on one sub-cell at a time, iterating until all the sub-cells have the calibrated Isc. The new approach is to create a matrix of measured lsc for small source changes on each sub-cell. A matrix, A, is produced. This is normalized to unit changes in the sources so that Ax(delta)s = (delta)isc. This matrix can now be inverted and used with the known Isc differences from the AM0 calibrated values to indicate changes in the source settings, (delta)s = A ·'x.(delta)isc This approach is still an iterative one, but all sources are changed during each iteration step. It typically takes four to six steps to converge on the calibrated lsc values. Even though the source lamps may degrade over time, the initial matrix evaluation i s not performed each time, since measurement matrix needs to be only approximate. Because an iterative approach is used the method will still continue to be valid. This method may become more important as state-of-the-art solar cell junction responses overlap the sources of the simulator. Also, as the number of cell junctions and sources increase, this method should remain applicable.

Developing Efficient Charge-Selective Interfacial Materials for Polymer and Perovskite Solar Cells

DTIC Science & Technology

2016-01-25

Materials for Polymer and Pervskite Solar Cells 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-14-1-4066 5c.  PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S) Alex K...fabrication of multi-junction organic and perovskite solar cells to reach high efficiency, low-cost, and good stability. To gain insights in these...assemble monolayer (SAMs) are being developed and optimized to meet criteria for organic/perovskite hybrid PVs : i) having the ability to promote Ohmic

On the thermoelastic analysis of solar cell arrays and related material properties

NASA Technical Reports Server (NTRS)

Salama, M. A.; Bouquet, F. L.

1976-01-01

Accurate prediction of failure of solar cell arrays requires accuracy in the computation of thermally induced stresses. This was accomplished by using the finite element technique. Improved procedures for stress calculation were introduced together with failure criteria capable of describing a wide range of ductile and brittle material behavior. The stress distribution and associated failure mechanisms in the N-interconnect junction of two solar cell designs were then studied. In such stress and failure analysis, it is essential to know the thermomechanical properties of the materials involved. Measurements were made of properties of materials suitable for the design of lightweight arrays: microsheet-0211 glass material for the solar cell filter, and Kapton-H, Kapton F, Teflon, Tedlar, and Mica Ply PG-402 for lightweight substrates. The temperature-dependence of the thermal coefficient of expansion for these materials was determined together with other properties such as the elastic moduli, Poisson's ratio, and the stress-strain behavior up to failure.

NASA Glenn Research Center Solar Cell Experiment Onboard the International Space Station

NASA Technical Reports Server (NTRS)

Myers, Matthew G.; Wolford, David S.; Prokop, Norman F.; Krasowski, Michael J.; Parker, David S.; Cassidy, Justin C.; Davies , William E.; Vorreiter, Janelle O.; Piszczor, Michael F.; Mcnatt, Jeremiah S.;

Thick-film materials for silicon photovoltaic cell manufacture

NASA Technical Reports Server (NTRS)

Field, M. B.

1977-01-01

Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

Selenium Interlayer for High-Efficiency Multijunction Solar Cell

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A (Inventor)

2015-01-01

A multi junction solar cell is provided and includes multiple semiconducting layers and an interface layer disposed between the multiple semiconducting layers. The interface layer is made from an interface bonding material that has a refractive index such that a ratio of a refractive index of each of the multiple semiconducting layers to the refractive index of the interface bonding material is less than or equal to 1.5.

Selenium Interlayer for High-Efficiency Multijunction Solar Cell

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A. (Inventor)

2016-01-01

A multi-junction solar cell is provided and includes multiple semiconducting layers and an interface layer disposed between the multiple semiconducting layers. The interface layer is made from an interface bonding material that has a refractive index such that a ratio of a refractive index of each of the multiple semiconducting layers to the refractive index of the interface bonding material is less than or equal to 1.5.

Solar cell array interconnects

DOEpatents

Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

1995-11-14

Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

Solar cell array interconnects

DOEpatents

Carey, Paul G.; Thompson, Jesse B.; Colella, Nicolas J.; Williams, Kenneth A.

1995-01-01

Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uzu, Hisashi, E-mail: Hisashi.Uzu@kaneka.co.jp, E-mail: npark@skku.edu; Ichikawa, Mitsuru; Hino, Masashi

2015-01-05

We have applied an optical splitting system in order to achieve very high conversion efficiency for a full spectrum multi-junction solar cell. This system consists of multiple solar cells with different band gap optically coupled via an “optical splitter.” An optical splitter is a multi-layered beam splitter with very high reflection in the shorter-wave-length range and very high transmission in the longer-wave-length range. By splitting the incident solar spectrum and distributing it to each solar cell, the solar energy can be managed more efficiently. We have fabricated optical splitters and used them with a wide-gap amorphous silicon (a-Si) solar cellmore » or a CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell as top cells, combined with mono-crystalline silicon heterojunction (HJ) solar cells as bottom cells. We have achieved with a 550 nm cutoff splitter an active area conversion efficiency of over 25% using a-Si and HJ solar cells and 28% using perovskite and HJ solar cells.« less

AlInAsSb for GaSb-based multi-junction solar cells

NASA Astrophysics Data System (ADS)

Tournet, J.; Rouillard, Y.; Tournié, E.

2018-02-01

Bandgap engineering, by means of alloying or inserting nanostructures, is the bedrock of high efficiency photovoltaics. III-V quaternary alloys in particular enable bandgap tailoring of a multi-junction subcell while conserving a single lattice parameter. Among the possible candidates, AlInAsSb could in theory reach the widest range of bandgap energies while being lattice-matched to InP or GaSb. Although these material systems are still emerging photovoltaic segments, they do offer advantages for multi-junction design. GaSbbased structures in particular can make use of highly efficient GaSb/InAs tunnel junctions to connect the subcells. There has been only little information concerning GaSb-lattice matched AlInAsSb in the literature. The alloy's miscibility gap can be circumvented by the use of non-equilibrium techniques. Nevertheless, appropriate growth conditions remain to be found in order to produce a stable alloy. Furthermore, the abnormally low bandgap energies reported for the material need to be confirmed and interpreted with a multi-junction perspective. In this work, we propose a tandem structure made of an AlInAsSb top cell and a GaSb bottom cell. An epitaxy study of the AlInAsSb alloy lattice-matched to GaSb was first performed. The subcells were then grown and processed. The GaSb subcell yielded an efficiency of 5.9% under 1 sun and the tandem cell is under optimization. Preliminary results are presented in this document.

Modeling of defect-tolerant thin multi-junction solar cells for space application

NASA Astrophysics Data System (ADS)

Mehrotra, A.; Alemu, A.; Freundlich, A.

2012-02-01

Using drift-diffusion model and considering experimental III-V material parameters, AM0 efficiencies of lattice-matched multijunction solar cells have been calculated and the effects of dislocations and radiation damage have been analyzed. Ultrathin multi-junction devices perform better in presence of dislocations or/and radiation harsh environment compared to conventional thick multijunction devices. Our results show that device design optimization of Ga0.51In0.49P/GaAs multijunction devices leads to an improvement in EOL efficiency from 4.8%, for the conventional thick device design, to 12.7%, for the EOL optimized thin devices. In addition, an optimized defect free lattice matched Ga0.51In0.49P/GaAs solar cell under 1016cm-2 1Mev equivalent electron fluence is shown to give an EOL efficiency of 12.7%; while a Ga0.51In0.49P/GaAs solar cell with 108 cm-2 dislocation density under 1016cm-2 electron fluence gives an EOL efficiency of 12.3%. The results suggest that by optimizing the device design, we can obtain nearly the same EOL efficiencies for high dislocation metamorphic solar cells and defect filtered metamorphic multijunction solar cells. The findings relax the need for thick or graded buffer used for defect filtering in metamorphic devices. It is found that device design optimization allows highly dislocated devices to be nearly as efficient as defect free devices for space applications.

Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.

PubMed

Gooth, Johannes; Borg, Mattias; Schmid, Heinz; Schaller, Vanessa; Wirths, Stephan; Moselund, Kirsten; Luisier, Mathieu; Karg, Siegfried; Riel, Heike

2017-04-12

Coherent interconnection of quantum bits remains an ongoing challenge in quantum information technology. Envisioned hardware to achieve this goal is based on semiconductor nanowire (NW) circuits, comprising individual NW devices that are linked through ballistic interconnects. However, maintaining the sensitive ballistic conduction and confinement conditions across NW intersections is a nontrivial problem. Here, we go beyond the characterization of a single NW device and demonstrate ballistic one-dimensional (1D) quantum transport in InAs NW cross-junctions, monolithically integrated on Si. Characteristic 1D conductance plateaus are resolved in field-effect measurements across up to four NW-junctions in series. The 1D ballistic transport and sub-band splitting is preserved for both crossing-directions. We show that the 1D modes of a single injection terminal can be distributed into multiple NW branches. We believe that NW cross-junctions are well-suited as cross-directional communication links for the reliable transfer of quantum information as required for quantum computational systems.

Critical Research for Cost-Effective Photoelectrochemical Production of Hydrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Liwei; Deng, Xunming; Abken, Anka

2014-10-29

The objective of this project is to develop critical technologies required for cost-effective production of hydrogen from sunlight and water using a-Si triple junction solar cell based photo-electrodes. In this project, Midwest Optoelectronics, LLC (MWOE) and its collaborating organizations utilize triple junction a-Si thin film solar cells as the core element to fabricate photoelectrochemical (PEC) cells. Triple junction a-Si/a-SiGe/a-SiGe solar cell is an ideal material for making cost-effective PEC system which uses sun light to split water and generate hydrogen. It has the following key features: 1) It has an open circuit voltage (Voc ) of ~ 2.3V and hasmore » an operating voltage around 1.6V. This is ideal for water splitting. There is no need to add a bias voltage or to inter-connect more than one solar cell. 2) It is made by depositing a-Si/a-SiGe/aSi-Ge thin films on a conducting stainless steel substrate which can serve as an electrode. When we immerse the triple junction solar cells in an electrolyte and illuminate it under sunlight, the voltage is large enough to split the water, generating oxygen at the Si solar cell side (for SS/n-i-p/sunlight structure) and hydrogen at the back, which is stainless steel side. There is no need to use a counter electrode or to make any wire connection. 3) It is being produced in large rolls of 3ft wide and up to 5000 ft long stainless steel web in a 25MW roll-to-roll production machine. Therefore it can be produced at a very low cost. After several years of research with many different kinds of material, we have developed promising transparent, conducting and corrosion resistant (TCCR) coating material; we carried out extensive research on oxygen and hydrogen generation catalysts, developed methods to make PEC electrode from production-grade a-Si solar cells; we have designed and tested various PEC module cases and carried out extensive outdoor testing; we were able to obtain a solar to hydrogen conversion efficiency (STH) about 5.7% and a running time about 480 hrs, which are very promising results; we have also completed a techno-economic analysis of our PEC system, which indicates that a projected hydrogen generation cost of $2/gge is achievable with a 50 Ton-per-day (TPD) scale under certain conditions.« less

Hybrid photovoltaic and thermoelectric module for high concentration solar system

NASA Astrophysics Data System (ADS)

Tamaki, Ryo; Toyoda, Takeshi; Tamura, Yoichi; Matoba, Akinari; Minamikawa, Toshiharu; Tokuda, Masayuki; Masui, Megumi; Okada, Yoshitaka

2017-09-01

A photovoltaic (PV) and thermoelectric (TE) hybrid module was developed for application to high concentration solar systems. The waste heat from the solar cells under concentrated light illumination was utilized to generate additional electricity by assembling TE devices below the multi-junction solar cells (MJSCs). Considering the high operating temperature of the PV and TE hybrid module compared with conventional concentrator PV modules, the TE device could compensate a part of the MJSC efficiency degradation at high temperature. The performance investigation clarified the feasibility of the hybrid PV and TE module under highly concentrated sunlight illumination.

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2015-01-01

A test was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by SSL. The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge testing at two string voltages (100 V, 150 V) and four array current (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micros to 2.9 ms. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission application.

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

NASA Technical Reports Server (NTRS)

Wright, K. H.; Schneider, T. A.; Vaughn, J. A.; Hoang, B.; Wong, F.

2014-01-01

A test was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by SSL. The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge testing at two string voltages (100 V, 150 V) and four array current (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 µs to 2.9 ms. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission application.

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2014-01-01

Testing was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by Space Systems/Loral, LLC (SSL). The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge (ESD) testing at two string voltages (100 V, 150 V) and four array currents (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micro-seconds to 2.75 milli-seconds. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission.

Wrinkles of graphene on Ir(111): Macroscopic network ordering and internal multi-lobed structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrovic, Marin; Sadowski, Jerzy T.; Siber, Antonio

The large-scale production of graphene monolayer greatly relies on epitaxial samples which often display stress-relaxation features in the form of wrinkles. Wrinkles of graphene on Ir(111) are found to exhibit a fairly well ordered interconnecting network which is characterized by low-energy electron microscopy (LEEM). The high degree of quasi-hexagonal network arrangement for the graphene aligned to the underlying substrate can be well described as a (non-Poissonian) Voronoi partition of a plane. The results obtained strongly suggest that the wrinkle network is frustrated at low temperatures, retaining the order inherited from elevated temperatures when the wrinkles interconnect in junctions which mostmore » often join three wrinkles. Such frustration favors the formation of multi-lobed wrinkles which are found in scanning tunneling microscopy (STM) measurements. The existence of multiple lobes is explained within a model accounting for the interplay of the van der Waals attraction between graphene and iridium and bending energy of the wrinkle. The presented study provides new insights into wrinkling of epitaxial graphene and can be exploited to further expedite its application.« less

Wrinkles of graphene on Ir(111): Macroscopic network ordering and internal multi-lobed structure

DOE PAGES

Petrovic, Marin; Sadowski, Jerzy T.; Siber, Antonio; ...

2015-07-17

The large-scale production of graphene monolayer greatly relies on epitaxial samples which often display stress-relaxation features in the form of wrinkles. Wrinkles of graphene on Ir(111) are found to exhibit a fairly well ordered interconnecting network which is characterized by low-energy electron microscopy (LEEM). The high degree of quasi-hexagonal network arrangement for the graphene aligned to the underlying substrate can be well described as a (non-Poissonian) Voronoi partition of a plane. The results obtained strongly suggest that the wrinkle network is frustrated at low temperatures, retaining the order inherited from elevated temperatures when the wrinkles interconnect in junctions which mostmore » often join three wrinkles. Such frustration favors the formation of multi-lobed wrinkles which are found in scanning tunneling microscopy (STM) measurements. The existence of multiple lobes is explained within a model accounting for the interplay of the van der Waals attraction between graphene and iridium and bending energy of the wrinkle. The presented study provides new insights into wrinkling of epitaxial graphene and can be exploited to further expedite its application.« less

Tunnel junction multiple wavelength light-emitting diodes

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1992-01-01

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

Further Analyses of the NASA Glenn Research Center Solar Cell and Photovoltaic Materials Experiment Onboard the International Space Station

NASA Technical Reports Server (NTRS)

Myers, Matthew G.; Prokop, Norman F.; Krasowski, Michael J.; Piszczor, Michael F.; McNatt, Jeremiah S.

2016-01-01

Accurate air mass zero (AM0) measurement is essential for the evaluation of new photovoltaic (PV) technology for space solar cells. The NASA Glenn Research Center (GRC) has flown an experiment designed to measure the electrical performance of several solar cells onboard NASA Goddard Space Flight Center's (GSFC) Robotic Refueling Mission's (RRM) Task Board 4 (TB4) on the exterior of the International Space Station (ISS). Four industry and government partners provided advanced PV devices for measurement and orbital environment testing. The experiment was positioned on the exterior of the station for approximately eight months, and was completely self-contained, providing its own power and internal data storage. Several new cell technologies including four-junction (4J) Inverted Metamorphic Multi-Junction (IMM) cells were evaluated and the results will be compared to ground-based measurement methods.

Solar Interconnection Standards & Policies

EPA Pesticide Factsheets

The Toolbox for Renewable Energy Project Development's Solar Interconnection Standards and Policies page provides an overview of the interconnection policy and standards, as well as, resources to help you understand the interconnection policy landscape.

Equipment Loan for Concentrated PV Cavity Converter (PVCC) Research: Cooperative Research and Development Final Report, CRADA Number CRD-08-285

DOE Office of Scientific and Technical Information (OSTI.GOV)

Netter, Judy

2015-07-28

Interest in High Concentration Photovoltaics (HCPV) for terrestrial applications has significantly grown in recent years. A major driver behind this growth trend is the availability of high efficiency multi-junction (MJ) cells that promise reliable operation under high concentrations (500 to 1000 suns). The primary impact of HCPV on the solar electricity cost is the dramatic reduction in cell cost. For terrestrial HCPV systems, operating at concentrations ≥ 500 suns, the expensive MJ cells are marginally affordable. Most recently, triple-junction test cells have achieved a conversion efficiency of over 40% under concentrated sunlight. Photovoltaic Cavity Converter (PVCC) is a multi-bandgap, highmore » concentration PV device developed by United Innovations, Inc., under subcontract to NREL. The lateral- (2- dimensional) structure of PVCC, as opposed to vertical multi-junction (MJ) structure, helps to circumvent most of the developmental challenges MJ technology has yet to overcome. This CRADA will allow the continued development of this technology by United Innovations. This project was funded by the California Energy Commission and is the second phase of a twopart demonstration program. The key advantage of the design was the use of a PVCC as the receiver. PVCCs efficiently process highly concentrated solar radiation into electricity by recycling photons that are reflected from the surface of the cells. Conventional flat, twodimensional receivers cannot recycle photons and the reflected photons are lost to the conversion process.« less

Hot Topics: Solar Interconnection Policy | State, Local, and Tribal

Science.gov Websites

Governments | NREL Blog » Hot Topics: Solar Interconnection Policy Hot Topics: Solar Renewable Energy Laboratory, discussing the PV interconnection process as part of our Hot Topics series

Flexible, FEP-Teflon covered solar cell module development

NASA Technical Reports Server (NTRS)

Rauschenbach, H. S.; Cannady, M. D.

1976-01-01

Techniques and equipment were developed for the large scale, low-cost fabrication of lightweight, roll-up and fold-up, FEP-Teflon encapsulated solar cell modules. Modules were fabricated by interconnecting solderless single-crystal silicon solar cells and heat laminating them at approximately 300 C between layers of optically clear FEP and to a loadbearing Kapton substrate sheet. Modules were fabricated from both conventional and wraparound contact solar cells. A heat seal technique was developed for mechanically interconnecting modules into an array. The electrical interconnections for both roll-up and fold-up arrays were also developed. The use of parallel-gap resistance welding, ultrasonic bonding, and thermocompression bonding processes for attaching interconnects to solar cells were investigated. Parallel-gap welding was found to be best suited for interconnecting the solderless solar cells into modules. Details of the fabrication equipment, fabrication processes, module and interconnect designs, environmental test equipment, and test results are presented.

Mitigating Interconnection Challenges of the High Penetration Utility-Interconnected Photovoltaic (PV) in the Electrical Distribution Systems: Cooperative Research and Development Final Report, CRADA Number CRD-14-563

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakraborty, Sudipta

Various interconnection challenges exist when connecting distributed PV into the electrical distribution grid in terms of safety, reliability, and stability of the electric power systems. Some of the urgent areas for research, as identified by inverter manufacturers, installers and utilities, are potential for transient overvoltage from PV inverters, multi-inverter anti-islanding, impact of smart inverters on volt-VAR support, impact of bidirectional power flow, and potential for distributed generation curtailment solutions to mitigate grid stability challenges. Under this project, NREL worked with SolarCity to address these challenges through research, testing and analysis at the Energy System Integration Facility (ESIF). Inverters from differentmore » manufacturers were tested at ESIF and NREL's unique power hardware-in-the-loop (PHIL) capability was utilized to evaluate various system-level impacts. Through the modeling, simulation, and testing, this project eliminated critical barriers on high PV penetration and directly supported the Department of Energy's SunShot goal of increasing the solar PV on the electrical grid.« less

Process for electrically interconnecting electrodes

DOEpatents

Carey, Paul G.; Thompson, Jesse B.; Colella, Nicolas J.; Williams, Kenneth A.

2002-01-01

Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb--Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb--Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

Tunnel junction multiple wavelength light-emitting diodes

DOEpatents

Olson, J.M.; Kurtz, S.R.

1992-11-24

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

Single P-N junction tandem photovoltaic device

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2012-03-06

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Single P-N junction tandem photovoltaic device

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2011-10-18

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Towards the Ultimate Multi-Junction Solar Cell using Transfer Printing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, Matthew P.; Meitl, Matt; Schmieder, Kenneth J.

2016-11-21

Transfer printing is a uniquely enabling technology for the heterogeneous integration of III-V materials grown on dissimilar substrates. In this paper, we present experimental results for a mechanically stacked tandem cell using GaAs and GaSb-based materials capable of harvesting the entire solar spectrum with 44.5% efficiency. We also present the latest results toward developing an ultra-high performance heterogeneous cell, integrating materials grown on GaAs, InP and GaSb platforms.

A transient plasticity study and low cycle fatigue analysis of the Space Station Freedom photovoltaic solar array blanket

NASA Technical Reports Server (NTRS)

Armand, Sasan C.; Liao, Mei-Hwa; Morris, Ronald W.

1990-01-01

The Space Station Freedom photovoltaic solar array blanket assembly is comprised of several layers of materials having dissimilar elastic, thermal, and mechanical properties. The operating temperature of the solar array, which ranges from -75 to +60 C, along with the material incompatibility of the blanket assembly components combine to cause an elastic-plastic stress in the weld points of the assembly. The weld points are secondary structures in nature, merely serving as electrical junctions for gathering the current. The thermal mechanical loading of the blanket assembly operating in low earth orbit continually changes throughout each 90 min orbit, which raises the possibility of fatigue induced failure. A series of structural analyses were performed in an attempt to predict the fatigue life of the solar cell in the Space Station Freedom photovoltaic array blanket. A nonlinear elastic-plastic MSC/NASTRAN analysis followed by a fatigue calculation indicated a fatigue life of 92,000 to 160,000 cycles for the solar cell weld tabs. Additional analyses predict a permanent buckling phenomenon in the copper interconnect after the first loading cycle. This should reduce or eliminate the pulling of the copper interconnect on the joint where it is welded to the silicon solar cell. It is concluded that the actual fatigue life of the solar array blanket assembly should be significantly higher than the calculated 92,000 cycles, and thus the program requirement of 87,500 cycles (orbits) will be met. Another important conclusion that can be drawn from the overall analysis is that, the strain results obtained from the MSC/NASTRAN nonlinear module are accurate to use for low-cycle fatigue analysis, since both thermal cycle testing of solar cells and analysis have shown higher fatigue life than the minimum program requirement of 87,500 cycles.

Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

DOEpatents

Murray, Christopher S.; Wilt, David M.

2000-01-01

An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

Low-Cost High-Efficiency Solar Cells with Wafer Bonding and Plasmonic Technologies

NASA Astrophysics Data System (ADS)

Tanake, Katsuaki

We fabricated a direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs dual-junction cell, to demonstrate a proof-of-principle for the viability of direct wafer bonding for solar cell applications. The bonded interface is a metal-free n+GaAs/n +InP tunnel junction with highly conductive Ohmic contact suitable for solar cell applications overcoming the 4% lattice mismatch. The quantum efficiency spectrum for the bonded cell was quite similar to that for each of unbonded GaAs and InGaAs subcells. The bonded dual-junction cell open-circuit voltage was equal to the sum of the unbonded subcell open-circuit voltages, which indicates that the bonding process does not degrade the cell material quality since any generated crystal defects that act as recombination centers would reduce the open-circuit voltage. Also, the bonded interface has no significant carrier recombination rate to reduce the open circuit voltage. Engineered substrates consisting of thin films of InP on Si handle substrates (InP/Si substrates or epitaxial templates) have the potential to significantly reduce the cost and weight of compound semiconductor solar cells relative to those fabricated on bulk InP substrates. InGaAs solar cells on InP have superior performance to Ge cells at photon energies greater than 0.7 eV and the current record efficiency cell for 1 sun illumination was achieved using an InGaP/GaAs/InGaAs triple junction cell design with an InGaAs bottom cell. Thermophotovoltaic (TPV) cells from the InGaAsP-family of III-V materials grown epitaxially on InP substrates would also benefit from such an InP/Si substrate. Additionally, a proposed four-junction solar cell fabricated by joining subcells of InGaAs and InGaAsP grown on InP with subcells of GaAs and AlInGaP grown on GaAs through a wafer-bonded interconnect would enable the independent selection of the subcell band gaps from well developed materials grown on lattice matched substrates. Substitution of InP/Si substrates for bulk InP in the fabrication of such a four-junction solar cell could significantly reduce the substrate cost since the current prices for commercial InP substrates are much higher than those for Si substrates by two orders of magnitude. Direct heteroepitaxial growth of InP thin films on Si substrates has not produced the low dislocation-density high quality layers required for active InGaAs/InP in optoelectronic devices due to the ˜8% lattice mismatch between InP and Si. We successfully fabricated InP/Si substrates by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. The thickness of the exfoliated InP films was only 900 nm, which means hundreds of the InP/Si substrates could be prepared from a single InP wafer in principle. The photovoltaic current-voltage characteristics of the In0.53Ga0.47As cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, and had a ˜20% higher short-circuit current which we attribute to the high reflectivity of the InP/SiO2/Si bonding interface. This work provides an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications. We have observed photocurrent enhancements up to 260% at 900 nm for a GaAs cell with a dense array of Ag nanoparticles with 150 nm diameter and 20 nm height deposited through porous alumina membranes by thermal evaporation on top of the cell, relative to reference GaAs cells with no metal nanoparticle array. This dramatic photocurrent enhancement is attributed to the effect of metal nanoparticles to scatter the incident light into photovoltaic layers with a wide range of angles to increase the optical path length in the absorber layer. GaAs solar cells with metallic structures at the bottom of the photovoltaic active layers, not only at the top, using semiconductor-metal direct bonding have been fabricated. These metallic back structures could incouple the incident light into surface plasmon mode propagating at the semiconductor/metal interface to increase the optical path, as well as simply act as back reflector, and we have observed significantly increased short-circuit current relative to reference cells without these metal components. (Abstract shortened by UMI.)

Air Quality Improvements of Increased Integration of Renewables: Solar Photovoltaics Penetration Scenarios

NASA Astrophysics Data System (ADS)

Duran, P.; Holloway, T.; Brinkman, G.; Denholm, P.; Littlefield, C. M.

2011-12-01

Solar photovoltaics (PV) are an attractive technology because they can be locally deployed and tend to yield high production during periods of peak electric demand. These characteristics can reduce the need for conventional large-scale electricity generation, thereby reducing emissions of criteria air pollutants (CAPs) and improving ambient air quality with regard to such pollutants as nitrogen oxides, sulfur oxides and fine particulates. Such effects depend on the local climate, time-of-day emissions, available solar resources, the structure of the electric grid, and existing electricity production among other factors. This study examines the air quality impacts of distributed PV across the United States Eastern Interconnection. In order to accurately model the air quality impact of distributed PV in space and time, we used the National Renewable Energy Lab's (NREL) Regional Energy Deployment System (ReEDS) model to form three unique PV penetration scenarios in which new PV construction is distributed spatially based upon economic drivers and natural solar resources. Those scenarios are 2006 Eastern Interconnection business as usual, 10% PV penetration, and 20% PV penetration. With the GridView (ABB, Inc) dispatch model, we used historical load data from 2006 to model electricity production and distribution for each of the three scenarios. Solar PV electric output was estimated using historical weather data from 2006. To bridge the gap between dispatch and air quality modeling, we will create emission profiles for electricity generating units (EGUs) in the Eastern Interconnection from historical Continuous Emissions Monitoring System (CEMS) data. Via those emissions profiles, we will create hourly emission data for EGUs in the Eastern Interconnect for each scenario during 2006. Those data will be incorporated in the Community Multi-scale Air Quality (CMAQ) model using the Sparse Matrix Operator Kernel Emissions (SMOKE) model. Initial results indicate that PV penetration significantly reduces conventional peak electricity production and that, due to reduced emissions during periods of extremely active photochemistry, air quality could see benefits.

InGaAsN/GaAs heterojunction for multi-junction solar cells

DOEpatents

Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

2001-01-01

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

1990-01-01

Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

Development of metal matrix composite gridlines for space photovoltaics

NASA Astrophysics Data System (ADS)

Abudayyeh, Omar Kamal

Space vehicles today are primarily powered by multi-junction photovoltaic cells due to their high efficiency and high radiation hardness in the space environment. While multi-junction solar cells provide high efficiency, microcracks develop in the crystalline semiconductor due to a variety of reasons, including: growth defects, film stress due to lattice constant mismatch, and external mechanical stresses introduced during shipping, installation, and operation. These microcracks have the tendency to propagate through the different layers of the semiconductor reaching the metal gridlines of the cell, resulting in electrically isolated areas from the busbar region, ultimately lowering the power output of the cell and potentially reducing the lifetime of the space mission. Pre-launch inspection are often expensive and difficult to perform, in which individual cells and entire modules must be replaced. In many cases, such microcracks are difficult to examine even with a thorough inspection. While repairs are possible pre-launch of the space vehicle, and even to some extent in low-to-earth missions, they are virtually impossible for deep space missions, therefore, efforts to mitigate the effects of these microcracks have substantial impact on the cell performance and overall success of the space mission. In this effort, we have investigated the use of multi-walled carbon nanotubes as mechanical reinforcement to the metal gridlines capable of bridging gaps generated in the underlying semiconductor while providing a redundant electrical conduction pathway. The carbon nanotubes are embedded in a silver matrix to create a metal matrix composite, which are later integrated onto commercial triple-junction solar cells.

Modulating light propagation in ZnO-Cu₂O-inverse opal solar cells for enhanced photocurrents.

PubMed

Yantara, Natalia; Pham, Thi Thu Trang; Boix, Pablo P; Mathews, Nripan

2015-09-07

The advantages of employing an interconnected periodic ZnO morphology, i.e. an inverse opal structure, in electrodeposited ZnO/Cu2O devices are presented. The solar cells are fabricated using low cost solution based methods such as spin coating and electrodeposition. The impact of inverse opal geometry, mainly the diameter and thickness, is scrutinized. By employing 3 layers of an inverse opal structure with a 300 nm pore diameter, higher short circuit photocurrents (∼84% improvement) are observed; however the open circuit voltages decrease with increasing interfacial area. Optical simulation using a finite difference time domain method shows that the inverse opal structure modulates light propagation within the devices such that more photons are absorbed close to the ZnO/Cu2O junction. This increases the collection probability resulting in improved short circuit currents.

Study of p-type and intrinsic materials for amorphous silicon based solar cells

NASA Astrophysics Data System (ADS)

Du, Wenhui

This dissertation summarizes the research work on the investigation and optimization of high efficiency hydrogenated amorphous silicon (a-Si:H) based thin film n-i-p single-junction and multi-junction solar cells, deposited using radio frequency (RF) and very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD) techniques. The fabrication and characterization of high quality p-type and intrinsic materials for a-Si:H based solar cells have been systematically and intensively studied. Hydrogen dilution, substrate temperature, gas flow rate, RF- or VHF-power density, and films deposition time have been optimized to obtain "on-the-edge" materials. To understand the material structure of the silicon p-layer providing a high Voc a-Si:H solar cell, hydrogenated amorphous, protocrystalline, and nanocrystalline silicon p-layers have been prepared using RF-PECVD and characterized by Raman spectroscopy and high resolution transmission electronic microscopy (HRTEM). It was found that the optimum Si:H p-layer for n-i-p a-Si:H solar cells is composed of fine-grained nanocrystals with crystallite sizes in the range of 3-5 nm embedded in an amorphous network. Using the optimized p-layer, an a-Si:H single-junction solar cell with a very high Voc value of 1.042 V and a FF value of 0.74 has been obtained. a-Si:H, a-SiGe:H and nc-Si:H i-layers have been prepared using RF- and VHF-PECVD techniques and monitored by different optical and electrical characterizations. Single-junction a-Si:H, a-SiGe and nc-Si:H cells have been developed and optimized. Intermediate bandgap a-SiGe:H solar cells achieved efficiencies over 12.5%. On the basis of optimized component cells, we achieved a-Si:Hla-SiGe:H tandem solar cells with efficiencies of ˜12.9% and a-Si:H/a-SiGe:H/a-SiGe:H triple-junction cells with efficiencies of ˜12.03%. VHF-PECVD technique was used to increase the deposition rates of the narrow bandgap materials. The deposition rate for a-SiGe:H i-layer attained 9 A/sec and the solar cell had a V oc of 0.588 V, Jsc of 20.4 mA/cm2, FF of 0.63, and efficiency of 7.6%. Preliminary research on the preparation of a-Si:Hlnc-Si:H tandem solar cells and a-Si:Hla-SiGe:Hlnc-Si:H triple-junction cells has also been undertaken using VHF nc-Si:H bottom cells with deposition rates of 6 A/sec. All I-V measurements were carried out under AM1.5G (100 MW/cm2) and the cell area was 0.25 cm2.

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.; Mcneely, J. B.; Barnett, A. M.

1991-01-01

The AstroPower self-supporting, transparent AlGaAs top solar cell can be stacked upon any well-developed bottom solar cell for improved system performance. This is an approach to improve the performance and scale of space photovoltaic power systems. Mechanically stacked tandem solar cell concentrator systems based on the AlGaAs top concentrator solar cell can provide near term efficiencies of 36 percent (AMO, 100x). Possible tandem stack efficiencies greater than 38 percent (100x, AMO) are feasible with a careful selection of materials. In a three solar cell stack, system efficiencies exceed 41 percent (100x, AMO). These device results demonstrate a practical solution for a state-of-the-art top solar cell for attachment to an existing, well-developed solar cell.

78 FR 17196 - Interconnect Solar Development LLC; Notice of Supplemental Filing

Federal Register 2010, 2011, 2012, 2013, 2014

2013-03-20

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket Nos. EL13-51-000, QF11-204-001, QF11-205-001] Interconnect Solar Development LLC; Notice of Supplemental Filing Take notice that on March 13, 2013, Interconnect Solar Development LLC filed a Firm Energy Sales Agreement to supplement the...

Superstrate sub-cell voltage-matched multijunction solar cells

DOEpatents

Mascarenhas, Angelo; Alberi, Kirstin

2016-03-15

Voltage-matched thin film multijunction solar cell and methods of producing cells having upper CdTe pn junction layers formed on a transparent substrate which in the completed device is operatively positioned in a superstate configuration. The solar cell also includes a lower pn junction formed independently of the CdTe pn junction and an insulating layer between CdTe and lower pn junctions. The voltage-matched thin film multijunction solar cells further include a parallel connection between the CdTe pn junction and lower pn junctions to form a two-terminal photonic device. Methods of fabricating devices from independently produced upper CdTe junction layers and lower junction layers are also disclosed.

Chemically Deposited Thin-Film Solar Cell Materials

NASA Technical Reports Server (NTRS)

Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

2005-01-01

We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

Accurate reconstruction of the jV-characteristic of organic solar cells from measurements of the external quantum efficiency

NASA Astrophysics Data System (ADS)

Meyer, Toni; Körner, Christian; Vandewal, Koen; Leo, Karl

2018-04-01

In two terminal tandem solar cells, the current density - voltage (jV) characteristic of the individual subcells is typically not directly measurable, but often required for a rigorous device characterization. In this work, we reconstruct the jV-characteristic of organic solar cells from measurements of the external quantum efficiency under applied bias voltages and illumination. We show that it is necessary to perform a bias irradiance variation at each voltage and subsequently conduct a mathematical correction of the differential to the absolute external quantum efficiency to obtain an accurate jV-characteristic. Furthermore, we show that measuring the external quantum efficiency as a function of voltage for a single bias irradiance of 0.36 AM1.5g equivalent sun provides a good approximation of the photocurrent density over voltage curve. The method is tested on a selection of efficient, common single-junctions. The obtained conclusions can easily be transferred to multi-junction devices with serially connected subcells.

Combined Space Environmental Exposure Tests of Multi-Junction GaAs/Ge Solar Array Coupons

NASA Technical Reports Server (NTRS)

Hoang, Bao; Wong, Frankie; Corey, Ron; Gardiner, George; Funderburk, Victor V.; Gahart, Richard; Wright, Kenneth H.; Schneider, Todd; Vaughn, Jason

2010-01-01

A set of multi-junction GaAs/Ge solar array test coupons were subjected to a sequence of 5-year increments of combined environmental exposure tests. The purpose of this test program is to understand the changes and degradation of the solar array panel components, including its ESD mitigation design features in their integrated form, after multiple years (up to 15) of simulated geosynchronous space environment. These tests consist of: UV radiation, electrostatic discharge (ESD), electron/proton particle radiation, thermal cycling, and ion thruster plume exposures. The solar radiation was produced using a Mercury-Xenon lamp with wavelengths in the UV spectrum ranging from 230 to 400 nm. The ESD test was performed in the inverted-gradient mode using a low-energy electron (2.6 - 6 keV) beam exposure. The ESD test also included a simulated panel coverglass flashover for the primary arc event. The electron/proton radiation exposure included both 1.0 MeV and 100 keV electron beams simultaneous with a 40 keV proton beam. The thermal cycling included simulated transient earth eclipse for satellites in geosynchronous orbit. With the increasing use of ion thruster engines on many satellites, the combined environmental test also included ion thruster exposure to determine whether solar array surface erosion had any impact on its performance. Before and after each increment of environmental exposures, the coupons underwent visual inspection under high power magnification and electrical tests that included characterization by LAPSS, Dark I-V, and electroluminescence. This paper discusses the test objective, test methodologies, and preliminary results after 5 years of simulated exposure.

NASA Capabilities That Could Impact Terrestrial Smart Grids of the Future

NASA Technical Reports Server (NTRS)

Beach, Raymond F.

2015-01-01

Incremental steps to steadily build, test, refine, and qualify capabilities that lead to affordable flight elements and a deep space capability. Potential Deep Space Vehicle Power system characteristics: power 10 kilowatts average; two independent power channels with multi-level cross-strapping; solar array power 24 plus kilowatts; multi-junction arrays; lithium Ion battery storage 200 plus ampere-hours; sized for deep space or low lunar orbit operation; distribution120 volts secondary (SAE AS 5698); 2 kilowatt power transfer between vehicles.

Studies of silicon p-n junction solar cells

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Lindholm, F. A.

1979-01-01

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

Glass light pipes for solar concentration

NASA Astrophysics Data System (ADS)

Madsen, C. K.; Dogan, Y.; Morrison, M.; Hu, C.; Atkins, R.

2018-02-01

Glass waveguides are fabricated using laser processing techniques that have low optical loss with >90% optical throughput. Advanced light pipes are demonstrated, including angled facets for turning mirrors used for lens-to-light pipe coupling, tapers that increase the concentration, and couplers for combining the outputs from multiple lens array elements. Because they are fabricated from glass, these light pipes can support large optical concentrations and propagate broadband solar over long distances with minimal loss and degradation compared to polymer waveguides. Applications include waveguiding solar concentrators using multi-junction PV cells, solar thermal applications and remoting solar energy, such as for daylighting. Ray trace simulations are used to estimate the surface smoothness required to achieve low loss. Optical measurements for fabricated light pipes are reported for use in waveguiding solar concentrator architectures.

Multijunction high voltage concentrator solar cells

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C.; Chai, A.-T.

1981-01-01

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

GaAs nanowire array solar cells with axial p-i-n junctions.

PubMed

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Cascade solar cell having conductive interconnects

DOEpatents

Borden, Peter G.; Saxena, Ram R.

1982-10-26

Direct ohmic contact between the cells in an epitaxially grown cascade solar cell is obtained by means of conductive interconnects formed through grooves etched intermittently in the upper cell. The base of the upper cell is directly connected by the conductive interconnects to the emitter of the bottom cell. The conductive interconnects preferably terminate on a ledge formed in the base of the upper cell.

Planar multijunction high voltage solar cells

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Chai, A. T.; Goradia, C.

1980-01-01

Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Broad spectrum solar cell

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA; Wu, Junqiao [Richmond, CA; Schaff, William J [Ithaca, NY

2007-05-15

An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

Idaho | Midmarket Solar Policies in the United States | Solar Research |

Science.gov Websites

to develop a 500 kW community solar project. State Incentive Programs Program Administrator Incentive and incentive programs. Net metering and interconnection Idaho Power: Net Metering and Interconnection

Electrical isolation of component cells in monolithically interconnected modules

DOEpatents

Wanlass, Mark W.

2001-01-01

A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.

Correlation between the physical parameters of the i-nc-Si absorber layer grown by 27.12 MHz plasma with the nc-Si solar cell parameters

NASA Astrophysics Data System (ADS)

Das, Debajyoti; Mondal, Praloy

2017-09-01

Growth of highly conducting nanocrystalline silicon (nc-Si) thin films of optimum crystalline volume fraction, involving dominant <220> crystallographic preferred orientation with simultaneous low fraction of microstructures at a low substrate temperature and high growth rate, is a challenging task for its promising utilization in nc-Si solar cells. Utilizing enhanced electron density and superior ion flux densities of the high frequency (∼27.12 MHz) SiH4 plasma, improved nc-Si films have been produced by simple optimization of H2-dilution, controlling the ion damage and enhancing supply of atomic-hydrogen onto the growing surface. Single junction nc-Si p-i-n solar cells have been prepared with i-nc-Si absorber layer and optimized. The physical parameters of the absorber layer have been systematically correlated to variations of the solar cell parameters. The preferred <220> alignment of crystallites, its contribution to the low recombination losses for conduction of charge carriers along the vertical direction, its spectroscopic correlation with the dominant growth of ultra-nanocrystalline silicon (unc-Si) component and corresponding longer wavelength absorption, especially in the neighborhood of i/n-interface region recognize scientific and technological key issues that pave the ground for imminent advancement of multi-junction silicon solar cells.

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

PubMed

Martí, A; Luque, A

2015-04-22

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

PubMed Central

Martí, A.; Luque, A.

2015-01-01

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions. PMID:25902374

DGIC Interconnection Insights | Distributed Generation Interconnection

Science.gov Websites

Power Association (SEPA), produced a webinar Utility Participation in the Roof Top Solar PV Market with ). These leaders are pioneering utility-owned rooftop solar programs to broaden the reach of solar PV utility hired solar PV developers who, representing CPS Energy, will install, own, and maintain solar

Active power control of solar PV generation for large interconnection frequency regulation and oscillation damping

DOE PAGES

Liu, Yong; Zhu, Lin; Zhan, Lingwei; ...

2015-06-23

Because of zero greenhouse gas emission and decreased manufacture cost, solar photovoltaic (PV) generation is expected to account for a significant portion of future power grid generation portfolio. Because it is indirectly connected to the power grid via power electronic devices, solar PV generation system is fully decoupled from the power grid, which will influence the interconnected power grid dynamic characteristics as a result. In this study, the impact of solar PV penetration on large interconnected power system frequency response and inter-area oscillation is evaluated, taking the United States Eastern Interconnection (EI) as an example. Furthermore, based on the constructedmore » solar PV electrical control model with additional active power control loops, the potential contributions of solar PV generation to power system frequency regulation and oscillation damping are examined. The advantages of solar PV frequency support over that of wind generator are also discussed. Finally, simulation results demonstrate that solar PV generations can effectively work as ‘actuators’ in alleviating the negative impacts they bring about.« less

Modeling and Simulation of a Dual-Junction CIGS Solar Cell Using Silvaco ATLAS

DTIC Science & Technology

2012-12-01

junction Copper Indium Gallium Selenide (CIGS) photovoltaic cell is investigated in this thesis. Research into implementing a dual-junction solar cell...Silvaco ATLASTM model of a single CIGS cell was created by utilizing actual solar cell parameters (such as layer thicknesses, gallium ratio, doping...THIS PAGE INTENTIONALLY LEFT BLANK v ABSTRACT The potential of designing a dual-junction Copper Indium Gallium Selenide (CIGS) photovoltaic

Semiconductor tunnel junction with enhancement layer

DOEpatents

Klem, John F.; Zolper, John C.

1997-01-01

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

Developments toward an 18% efficient silicon solar cell

NASA Technical Reports Server (NTRS)

Meulenberg, A., Jr.

1983-01-01

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

Economic feasibility of solar water and space heating.

PubMed

Bezdek, R H; Hirshberg, A S; Babcock, W H

1979-03-23

The economic feasibility in 1977 and 1978 of solar water and combined water and space heating is analyzed for single-family detached residences and multi-family apartment buildings in four representative U.S. cities: Boston, Massachusetts; Washington, D.C.; Grand Junction, Colorado; and Los Angeles, California. Three economic decision criteria are utilized: payback period, years to recovery of down payment, and years to net positive cash flow. The cost competitiveness of the solar systems compared to heating systems based on electricity, fuel oil, and natural gas is then discussed for each city, and the impact of the federal tax credit for solar energy systems is assessed. It is found that even without federal incentives some solar water and space heating systems are competitive. Enactment of the solar tax credit, however, greatly enhances their competitiveness. The implications of these findings for government tax and energy pricing policies are discussed.

Multi-spacecraft solar energetic particle analysis of FERMI gamma-ray flare events within the HESPERIA H2020 project

NASA Astrophysics Data System (ADS)

Tziotziou, Kostas; Malandraki, Olga; Valtonen, Eino; Heber, Bernd; Zucca, Pietro; Klein, Karl-Ludwig; Vainio, Rami; Tsiropoula, Georgia; Share, Gerald

2017-04-01

Multi-spacecraft observations of solar energetic particle (SEP) events are important for understanding the acceleration processes and the interplanetary propagation of particles released during eruptive events. In this work, we have carefully studied 25 gamma-ray flare events observed by FERMI and investigated possible associations with SEP-related events observed with STEREO and L1 spacecraft in the heliosphere. A data-driven velocity dispersion analysis (VDA) and Time-Shifting Analysis (TSA) are used for deriving the release times of protons and electrons at the Sun and for comparing them with the respective times stemming from the gamma-ray event analysis and their X-ray signatures, in an attempt to interconnect the SEPs and Fermi events and better understand the physics involved. Acknowledgements: This project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No 637324.

The Solar Array Photovoltaic Assembly for the INSAT 4CR Spacecraft Design, Development and In-Orbit Performance

NASA Astrophysics Data System (ADS)

Thomas, Joseph; Sudhakar, M.; Agarwal, Anil; Sankaran, M.; Mudramachary, P.

2008-09-01

The INSAT 4CR spacecraft, the third in the INSAT 4 series of Indian Space Research Organization (ISRO)'s Communication satellite program, is a high power communication satellite in Geo- stationary Earth Orbit (GEO), configured using the ISRO I2K bus. The primary power is provided by two-wing sun tracking, deployable solar array and the eclipse load requirement is supported by two 70 Ah nickel hydrogen batteries. The power output of the solar array is regulated by Sequential Switching Shunt Regulators to 42V±0.5V. The salient feature of the solar array design is that it uses the new generation multi junction solar cells for all the four panels of size 2.54m x 1.525m to meet the higher power requirement with the available array area. The solar panel fabrication process with the Advanced Triple Junction (ATJ) solar cells from M/s. EMCORE, USA, has been demonstrated for the GEO life cycle through qualification coupon fabrication and testing.This paper describes the INSAT 4CR solar array photovoltaic assemblies design, layout optimization and realization of the Flight Model (FM) panels. It focuses on the power generation prediction, electrical performance measurement under Large Area Pulsed Sun Simulator (LAPSS) and verification of the ground level test results. The indigenously built Geostationary Launch Vehicle (GSLV F04) has successfully launched the INSAT 4CR spacecraft into the orbit on September 2nd, 2007. This paper also presents the analysis of telemetry data to validate the initial phase in-orbit performance of the solar array with prediction.

Solar cell modules with improved backskin and methods for forming same

DOEpatents

Hanoka, Jack I.

1998-04-21

A laminated solar cell module with a backskin layer that reduces the materials and labor required during the manufacturing process. The solar cell module includes a rigid front support layer formed of light transmitting material having first and second surfaces. A transparent encapsulant layer has a first surface disposed adjacent the second surface of the front support layer. A plurality of interconnected solar cells have a first surface disposed adjacent a second surface of the transparent encapsulant layer. The backskin layer is formed of a thermoplastic olefin, which includes first ionomer, a second ionomer, glass fiber, and carbon black. A first surface of the backskin layer is disposed adjacent a second surface of the interconnected solar cells. The transparent encapsulant layer and the backskin layer, in combination, encapsulate the interconnected solar cells. An end portion of the backskin layer can be wrapped around the edge of the module for contacting the first surface of the front support layer to form an edge seal. A laminated solar cell module with a backskin layer that reduces the materials and labor required during the manufacturing process. The solar cell module includes a rigid front support layer formed of light transmitting material having first and second surfaces. A transparent encapsulant layer has a first surface disposed adjacent the second surface of the front support layer. A plurality of interconnected solar cells have a first surface disposed adjacent a second surface of the transparent encapsulant layer. The backskin layer is formed of a thermoplastic olefin, which includes first ionomer, a second ionomer, glass fiber, and carbon black. A first surface of the backskin layer is disposed adjacent a second surface of the interconnected solar cells. The transparent encapsulant layer and the backskin layer, in combination, encapsulate the interconnected solar cells. An end portion of the backskin layer can be wrapped around the edge of the module for contacting the first surface of the front support layer to form an edge seal.

Design and Photovoltaic Properties of Graphene/Silicon Solar Cell

NASA Astrophysics Data System (ADS)

Xu, Dikai; Yu, Xuegong; Yang, Lifei; Yang, Deren

2018-04-01

Graphene/silicon (Gr/Si) Schottky junction solar cells have attracted widespread attention for the fabrication of high-efficiency and low-cost solar cells. However, their performance is still limited by the working principles of Schottky junctions. Modulating the working mechanism of the solar cells into a quasi p-n junction has advantages, including higher open-circuit voltage (V OC) and less carrier recombination. In this study, Gr/Si quasi p-n junction solar cells were formed by inserting a tunneling Al2O3 interlayer in-between graphene and silicon, which led to obtain the PCE up to 8.48% without antireflection or chemical doping techniques. Our findings could pave a new way for the development of Gr/Si solar cells.

Three-junction solar cell

DOEpatents

Ludowise, Michael J.

1986-01-01

A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

North Dakota | Solar Research | NREL

Science.gov Websites

customer's load are owned by net-metered customers, while RECs associated with NEG are owned by the utility . Meter aggregation: Not addressed Interconnection There are currently no specific interconnection unclear. Community Solar There are currently no statewide community solar policies in North Dakota. State

Development of a Thin Film Solar Cell Interconnect for the Powersphere Concept

NASA Technical Reports Server (NTRS)

Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander, III; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig H.; Lin, John K.; Scarborough, Stephen

2003-01-01

Progressive development of microsatellite technologies has resulted in increased demand for lightweight electrical power subsystems including solar arrays. The use of thin film photovoltaics has been recognized as a key solution to meet the power needs. The lightweight cells can generate sufficient power and still meet critical mass requirements. Commercially available solar cells produced on lightweight substrates are being studied as an option to fulfill the power needs. The commercially available solar cells are relatively inexpensive and have a high payoff potential. Commercially available thin film solar cells are primarily being produced for terrestrial applications. The need to convert the solar cell from a terrestrial to a space compatible application is the primary challenge. Solar cell contacts, grids and interconnects need to be designed to be atomic oxygen resistant and withstand rapid thermal cycling environments. A mechanically robust solar cell interconnect is also required in order to withstand handling during fabrication and survive during launch. The need to produce the solar cell interconnects has been identified as a primary goal of the Powersphere program and is the topic of this paper. Details of the trade study leading to the final design involving the solar cell wrap around contact, flex blanket, welding process, and frame will be presented at the conference.

Solar Cell Modules With Improved Backskin

DOEpatents

Gonsiorawski, Ronald C.

2003-12-09

A laminated solar cell module comprises a front light transmitting support, a plurality of interconnected solar cells encapsulated by a light-transmitting encapsulant material, and an improved backskin formed of an ionomer/nylon alloy. The improved backskin has a toughness and melting point temperature sufficiently great to avoid any likelihood of it being pierced by any of the components that interconnect the solar cells.

Recovery of shallow junction GaAs solar cells damaged by electron irradiation

NASA Technical Reports Server (NTRS)

Walker, G. H.; Conway, E. J.

1978-01-01

Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.

Semiconductor tunnel junction with enhancement layer

DOEpatents

Klem, J.F.; Zolper, J.C.

1997-10-21

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.

Amorphous semiconductor solar cell

DOEpatents

Dalal, Vikram L.

1981-01-01

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

The Extrapolation of High Altitude Solar Cell I(V) Characteristics to AM0

NASA Technical Reports Server (NTRS)

Snyder, David B.; Scheiman, David A.; Jenkins, Phillip P.; Reinke, William; Blankenship, Kurt; Demers, James

2007-01-01

The high altitude aircraft method has been used at NASA GRC since the early 1960's to calibrate solar cell short circuit current, ISC, to Air Mass Zero (AMO). This method extrapolates ISC to AM0 via the Langley plot method, a logarithmic extrapolation to 0 air mass, and includes corrections for the varying Earth-Sun distance to 1.0 AU and compensating for the non-uniform ozone distribution in the atmosphere. However, other characteristics of the solar cell I(V) curve do not extrapolate in the same way. Another approach is needed to extrapolate VOC and the maximum power point (PMAX) to AM0 illumination. As part of the high altitude aircraft method, VOC and PMAX can be obtained as ISC changes during the flight. These values can then the extrapolated, sometimes interpolated, to the ISC(AM0) value. This approach should be valid as long as the shape of the solar spectra in the stratosphere does not change too much from AMO. As a feasibility check, the results are compared to AMO I(V) curves obtained using the NASA GRC X25 based multi-source simulator. This paper investigates the approach on both multi-junction solar cells and sub-cells.

Potential Egypt-Israel joint venture to establish a solar equipment manufacturing and energy center at El Arish on Sinai

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolfe, M.H.

1994-12-01

This presentation is a proposal made in the context of the evolving plans for power system interconnection in the Mashreq Arab countries of the Middle East, including studies completed for the Gulf States Interconnection along the Arabian Gulf from Kuwait to Oman. It also introduces the possibility of eventual interconnection of these systems with a major HVDC interconnection between the Inga hydropower source in Zaire and Egypt via an energy exchange center located at El Arish on Sinai. As realization of the Inga hydropower development will require many years to accomplish and as current plans for interconnection in the Mashreqmore » Arab countries are proceeding, it is thought that introduction of the possibility for eventual inter-regional interconnection between Africa and the Middle East should be considered within a time-frame that would encompass a dual-purpose aim beginning with the establishment of a solar equipment manufacturing facility to accentuate solar energy conversion for desalination and hydrogen production within the region. If this facility were located in convenient proximity to major nodes of the interconnected systems of the region, then it ultimately would be both a solar equipment manufacturing and energy exchange (SEMEX) center.« less

Interconnected magnetic tunnel junctions for spin-logic applications

NASA Astrophysics Data System (ADS)

Manfrini, Mauricio; Vaysset, Adrien; Wan, Danny; Raymenants, Eline; Swerts, Johan; Rao, Siddharth; Zografos, Odysseas; Souriau, Laurent; Gavan, Khashayar Babaei; Rassoul, Nouredine; Radisic, Dunja; Cupak, Miroslav; Dehan, Morin; Sayan, Safak; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.; Mocuta, Dan; Radu, Iuliana P.

2018-05-01

With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel junctions. By means of spin-transfer torque effect, domains walls are produced at the common free layer and its propagation towards the output pillar sensed by tunneling magneto-resistance. Domain pinning conditions are studied quasi-statically showing a strong dependence on pillar size, ferromagnetic free layer width and inter-pillar distance. Addressing pinning conditions are detrimental for cascading and fan-out of domain walls across nodes, enabling the realization of domain-wall-based logic technology.

Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%

NASA Astrophysics Data System (ADS)

Sai, Hitoshi; Matsui, Takuya; Koida, Takashi; Matsubara, Koji; Kondo, Michio; Sugiyama, Shuichiro; Katayama, Hirotaka; Takeuchi, Yoshiaki; Yoshida, Isao

2015-05-01

We report a high-efficiency triple-junction thin-film silicon solar cell fabricated with the so-called substrate configuration. It was verified whether the design criteria for developing single-junction microcrystalline silicon (μc-Si:H) solar cells are applicable to multijunction solar cells. Furthermore, a notably high short-circuit current density of 32.9 mA/cm2 was achieved in a single-junction μc-Si:H cell fabricated on a periodically textured substrate with a high-mobility front transparent contacting layer. These technologies were also combined into a-Si:H/μc-Si:H/μc-Si:H triple-junction cells, and a world record stabilized efficiency of 13.6% was achieved.

Solution-processed small-molecule solar cells: breaking the 10% power conversion efficiency.

PubMed

Liu, Yongsheng; Chen, Chun-Chao; Hong, Ziruo; Gao, Jing; Yang, Yang Michael; Zhou, Huanping; Dou, Letian; Li, Gang; Yang, Yang

2013-11-28

A two-dimensional conjugated small molecule (SMPV1) was designed and synthesized for high performance solution-processed organic solar cells. This study explores the photovoltaic properties of this molecule as a donor, with a fullerene derivative as an acceptor, using solution processing in single junction and double junction tandem solar cells. The single junction solar cells based on SMPV1 exhibited a certified power conversion efficiency of 8.02% under AM 1.5 G irradiation (100 mW cm(-2)). A homo-tandem solar cell based on SMPV1 was constructed with a novel interlayer (or tunnel junction) consisting of bilayer conjugated polyelectrolyte, demonstrating an unprecedented PCE of 10.1%. These results strongly suggest solution-processed small molecular materials are excellent candidates for organic solar cells.

Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)

NASA Astrophysics Data System (ADS)

Tanaka, Makoto; Taguchi, Mikio; Matsuyama, Takao; Sawada, Toru; Tsuda, Shinya; Nakano, Shoichi; Hanafusa, Hiroshi; Kuwano, Yukinori

1992-11-01

A new type of a-Si/c-Si heterojunction solar cell, called the HIT (Heterojunction with Intrinsic Thin-layer) solar cell, has been developed based on ACJ (Artificially Constructed Junction) technology. A conversion efficiency of more than 18% has been achieved, which is the highest ever value for solar cells in which the junction was fabricated at a low temperature (<200°C).

Solar-cell interconnect design for terrestrial photovoltaic modules

NASA Technical Reports Server (NTRS)

Mon, G. R.; Moore, D. M.; Ross, R. G., Jr.

1984-01-01

Useful solar cell interconnect reliability design and life prediction algorithms are presented, together with experimental data indicating that the classical strain cycle (fatigue) curve for the interconnect material does not account for the statistical scatter that is required in reliability predictions. This shortcoming is presently addressed by fitting a functional form to experimental cumulative interconnect failure rate data, which thereby yields statistical fatigue curves enabling not only the prediction of cumulative interconnect failures during the design life of an array field, but also the quantitative interpretation of data from accelerated thermal cycling tests. Optimal interconnect cost reliability design algorithms are also derived which may allow the minimization of energy cost over the design life of the array field.

Solar-cell interconnect design for terrestrial photovoltaic modules

NASA Astrophysics Data System (ADS)

Mon, G. R.; Moore, D. M.; Ross, R. G., Jr.

1984-11-01

Useful solar cell interconnect reliability design and life prediction algorithms are presented, together with experimental data indicating that the classical strain cycle (fatigue) curve for the interconnect material does not account for the statistical scatter that is required in reliability predictions. This shortcoming is presently addressed by fitting a functional form to experimental cumulative interconnect failure rate data, which thereby yields statistical fatigue curves enabling not only the prediction of cumulative interconnect failures during the design life of an array field, but also the quantitative interpretation of data from accelerated thermal cycling tests. Optimal interconnect cost reliability design algorithms are also derived which may allow the minimization of energy cost over the design life of the array field.

Conversion efficiency limits and bandgap designs for multi-junction solar cells with internal radiative efficiencies below unity.

PubMed

Zhu, Lin; Mochizuki, Toshimitsu; Yoshita, Masahiro; Chen, Shaoqiang; Kim, Changsu; Akiyama, Hidefumi; Kanemitsu, Yoshihiko

2016-05-16

We calculated the conversion-efficiency limit ηsc and the optimized subcell bandgap energies of 1 to 5 junction solar cells without and with intermediate reflectors under 1-sun AM1.5G and 1000-sun AM1.5D irradiations, particularly including the impact of internal radiative efficiency (ηint) below unity for realistic subcell materials on the basis of an extended detailed-balance theory. We found that the conversion-efficiency limit ηsc significantly drops when the geometric mean ηint* of all subcell ηint in the stack reduces from 1 to 0.1, and that ηsc degrades linearly to logηint* for ηint* below 0.1. For ηint*<0.1 differences in ηsc due to additional intermediate reflectors became very small if all subcells are optically thick for sun light. We obtained characteristic optimized bandgap energies, which reflect both ηint* decrease and AM1.5 spectral gaps. These results provide realistic efficiency targets and design principles.

Dilute Nitrides For 4-And 6- Junction Space Solar Cells

NASA Astrophysics Data System (ADS)

Essig, S.; Stammler, E.; Ronsch, S.; Oliva, E.; Schachtner, M.; Siefer, G.; Bett, A. W.; Dimroth, F.

2011-10-01

According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge triple-junction space solar cells can be strongly increased by the incorporation of additional junctions. In this way the existing excess current of the Germanium bottom cell can be reduced and the voltage of the stack can be increased. In particular, the use of 1.0 eV materials like GaInNAs opens the door for solar cells with significantly improved conversion efficiency. We have investigated the material properties of GaInNAs grown by metal organic vapour phase epitaxy (MOVPE) and its impact on the quantum efficiency of solar cells. Furthermore we have developed a GaInNAs subcell with a bandgap energy of 1.0 eV and integrated it into a GaInP/GaInAs/GaInNAs/Ge 4-junction and a AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge 6- junction space solar cell. The material quality of the dilute nitride junction limits the current density of these devices to 9.3 mA/cm2 (AM0). This is not sufficient for a 4-junction cell but may lead to current matched 6- junction devices in the future.

Solare Cell Roof Tile And Method Of Forming Same

DOEpatents

Hanoka, Jack I.; Real, Markus

1999-11-16

A solar cell roof tile includes a front support layer, a transparent encapsulant layer, a plurality of interconnected solar cells and a backskin layer. The front support layer is formed of light transmitting material and has first and second surfaces. The transparent encapsulant layer is disposed adjacent the second surface of the front support layer. The interconnected solar cells has a first surface disposed adjacent the transparent encapsulant layer. The backskin layer has a first surface disposed adjacent a second surface of the interconnected solar cells, wherein a portion of the backskin layer wraps around and contacts the first surface of the front support layer to form the border region. A portion of the border region has an extended width. The solar cell roof tile may have stand-offs disposed on the extended width border region for providing vertical spacing with respect to an adjacent solar cell roof tile.

Studies of silicon p-n junction solar cells. [open circuit photovoltage

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1976-01-01

Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.

Dual-junction GaAs solar cells and their application to smart stacked III–V//Si multijunction solar cells

NASA Astrophysics Data System (ADS)

Sugaya, Takeyoshi; Tayagaki, Takeshi; Aihara, Taketo; Makita, Kikuo; Oshima, Ryuji; Mizuno, Hidenori; Nagato, Yuki; Nakamoto, Takashi; Okano, Yoshinobu

2018-05-01

We report high-quality dual-junction GaAs solar cells grown using solid-source molecular beam epitaxy and their application to smart stacked III–V//Si quadruple-junction solar cells with a two-terminal configuration for the first time. A high open-circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open-circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si two-terminal solar cells.

Skylab observations of X-ray loops connecting separate active regions. [solar activity

NASA Technical Reports Server (NTRS)

Chase, R. C.; Krieger, A. S.; Svestka, Z.; Vaiana, G. S.

1976-01-01

One hundred loops interconnecting 94 separate active solar regions detectable in soft X-rays were identified during the Skylab mission. While close active regions are commonly interconnected with loops, the number of such interconnections decreases steeply for longer distances; the longest interconnecting loop observed in the Skylab data connected regions separated by 37 deg. Several arguments are presented which support the point of view that this is the actual limit of the size of magnetic interconnections between active regions. No sympathetic flares could be found in the interconnected regions. These results cast doubt on the hypothesis that accelerated particles can be guided in interconnecting loops from one active region to another over distances of 100 deg or more and eventually produce sympathetic flares in them.

Photovoltaic and photoelectrochemical conversion of solar energy.

PubMed

Grätzel, Michael

2007-04-15

The Sun provides approximately 100,000 terawatts to the Earth which is about 10000 times more than the present rate of the world's present energy consumption. Photovoltaic cells are being increasingly used to tap into this huge resource and will play a key role in future sustainable energy systems. So far, solid-state junction devices, usually made of silicon, crystalline or amorphous, and profiting from the experience and material availability resulting from the semiconductor industry, have dominated photovoltaic solar energy converters. These systems have by now attained a mature state serving a rapidly growing market, expected to rise to 300 GW by 2030. However, the cost of photovoltaic electricity production is still too high to be competitive with nuclear or fossil energy. Thin film photovoltaic cells made of CuInSe or CdTe are being increasingly employed along with amorphous silicon. The recently discovered cells based on mesoscopic inorganic or organic semiconductors commonly referred to as 'bulk' junctions due to their three-dimensional structure are very attractive alternatives which offer the prospect of very low cost fabrication. The prototype of this family of devices is the dye-sensitized solar cell (DSC), which accomplishes the optical absorption and the charge separation processes by the association of a sensitizer as light-absorbing material with a wide band gap semiconductor of mesoporous or nanocrystalline morphology. Research is booming also in the area of third generation photovoltaic cells where multi-junction devices and a recent breakthrough concerning multiple carrier generation in quantum dot absorbers offer promising perspectives.

Modeling and experimental characterization of electromigration in interconnect trees

NASA Astrophysics Data System (ADS)

Thompson, C. V.; Hau-Riege, S. P.; Andleigh, V. K.

1999-11-01

Most modeling and experimental characterization of interconnect reliability is focussed on simple straight lines terminating at pads or vias. However, laid-out integrated circuits often have interconnects with junctions and wide-to-narrow transitions. In carrying out circuit-level reliability assessments it is important to be able to assess the reliability of these more complex shapes, generally referred to as `trees.' An interconnect tree consists of continuously connected high-conductivity metal within one layer of metallization. Trees terminate at diffusion barriers at vias and contacts, and, in the general case, can have more than one terminating branch when they include junctions. We have extended the understanding of `immortality' demonstrated and analyzed for straight stud-to-stud lines, to trees of arbitrary complexity. This leads to a hierarchical approach for identifying immortal trees for specific circuit layouts and models for operation. To complete a circuit-level-reliability analysis, it is also necessary to estimate the lifetimes of the mortal trees. We have developed simulation tools that allow modeling of stress evolution and failure in arbitrarily complex trees. We are testing our models and simulations through comparisons with experiments on simple trees, such as lines broken into two segments with different currents in each segment. Models, simulations and early experimental results on the reliability of interconnect trees are shown to be consistent.

Passivity-based control of linear time-invariant systems modelled by bond graph

NASA Astrophysics Data System (ADS)

Galindo, R.; Ngwompo, R. F.

2018-02-01

Closed-loop control systems are designed for linear time-invariant (LTI) controllable and observable systems modelled by bond graph (BG). Cascade and feedback interconnections of BG models are realised through active bonds with no loading effect. The use of active bonds may lead to non-conservation of energy and the overall system is modelled by proposed pseudo-junction structures. These structures are build by adding parasitic elements to the BG models and the overall system may become singularly perturbed. The structures for these interconnections can be seen as consisting of inner structures that satisfy energy conservation properties and outer structures including multiport-coupled dissipative fields. These fields highlight energy properties like passivity that are useful for control design. In both interconnections, junction structures and dissipative fields for the controllers are proposed, and passivity is guaranteed for the closed-loop systems assuring robust stability. The cascade interconnection is applied to the structural representation of closed-loop transfer functions, when a stabilising controller is applied to a given nominal plant. Applications are given when the plant and the controller are described by state-space realisations. The feedback interconnection is used getting necessary and sufficient stability conditions based on the closed-loop characteristic polynomial, solving a pole-placement problem and achieving zero-stationary state error.

Comparative Assessment of Tactics to Improve Primary Frequency Response Without Curtailing Solar Output in High Photovoltaic Interconnection Grids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, Jin; Zhang, Yingchen; You, Shutang

Power grid primary frequency response will be significantly impaired by Photovoltaic (PV) penetration increase because of the decrease in inertia and governor response. PV inertia and governor emulation requires reserving PV output and leads to solar energy waste. This paper exploits current grid resources and explores energy storage for primary frequency response under high PV penetration at the interconnection level. Based on the actual models of the U.S. Eastern Interconnection grid and the Texas grid, effects of multiple factors associated with primary frequency response, including the governor ratio, governor deadband, droop rate, fast load response. are assessed under high PVmore » penetration scenarios. In addition, performance of batteries and supercapacitors using different control strategies is studied in the two interconnections. The paper quantifies the potential of various resources to improve interconnection-level primary frequency response under high PV penetration without curtailing solar output.« less

Toward a III-V Multijunction Space Cell Technology on Si

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Lueck, M. R.; Andre, C. L.; Fitzgerald, E. A.; Wilt, D. M.; Scheiman, D.

2007-01-01

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

NASA Technical Reports Server (NTRS)

Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

1980-01-01

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Intercellular communication via gap junctions affected by mechanical load in the bovine annulus fibrosus.

PubMed

Desrochers, Jane; Duncan, Neil A

2014-01-01

Cells in the intervertebral disc, as in other connective tissues including tendon, ligament and bone, form interconnected cellular networks that are linked via functional gap junctions. These cellular networks may be necessary to affect a coordinated response to mechanical and environmental stimuli. Using confocal microscopy with fluorescence recovery after photobleaching methods, we explored the in situ strain environment of the outer annulus of an intact bovine disc and the effect of high-level flexion on gap junction signalling. The in situ strain environment in the extracellular matrix of the outer annulus under high flexion load was observed to be non-uniform with the extensive cellular processes remaining crimped sometimes at flexion angles greater than 25°. A significant transient disruption of intercellular communication via functional gap junctions was measured after 10 and 20 min under high flexion load. This study illustrates that in healthy annulus fibrosus tissue, high mechanical loads can impede the functioning of the gap junctions. Future studies will explore more complex loading conditions to determine whether losses in intercellular communication can be permanent and whether gap junctions in aged and degenerated tissues become more susceptible to load. The current research suggests that cellular structures such as gap junctions and intercellular networks, as well as other cell-cell and cell-matrix interconnections, need to be considered in computational models in order to fully understand how macroscale mechanical signals are transmitted across scales to the microscale and ultimately into a cellular biosynthetic response in collagenous tissues.

Monolithic multi-color light emission/detection device

DOEpatents

Wanlass, Mark W.

1995-01-01

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber.

Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell

NASA Astrophysics Data System (ADS)

Kewei, Cao; Tong, Liu; Jingming, Liu; Hui, Xie; Dongyan, Tao; Youwen, Zhao; Zhiyuan, Dong; Feng, Hui

2016-06-01

Low dislocation density Ge wafers grown by a vertical gradient freeze (VGF) method used for the fabrication of multi-junction photovoltaic cells (MJC) have been studied by a whole wafer scale measurement of the lattice parameter, X-ray rocking curves, etch pit density (EPD), impurities concentration, minority carrier lifetime and residual stress. Impurity content in the VGF-Ge wafers, including that of B, is quite low although B2O3 encapsulation is used in the growth process. An obvious difference exists across the whole wafer regarding the distribution of etch pit density, lattice parameter, full width at half maximum (FWHM) of the X-ray rocking curve and residual stress measured by Raman spectra. These are in contrast to a reference Ge substrate wafer grown by the Cz method. The influence of the VGF-Ge substrate on the performance of the MJC is analyzed and evaluated by a comparison of the statistical results of cell parameters. Project supported by the National Natural Science Foundation of China (No. 61474104).

Investigation on high-efficiency Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications

NASA Astrophysics Data System (ADS)

Zhang, Lei; Niu, Pingjuan; Li, Yuqiang; Song, Minghui; Zhang, Jianxin; Ning, Pingfan; Chen, Peizhuan

2017-12-01

Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications were grown on 4 inch Ge substrates by metal organic chemical vapor deposition methods. The triple-junction solar cells were obtained by optimizing the subcell structure, showing a high open-circuit voltage of 2.77 V and a high conversion efficiency of 31% with 30.15 cm2 area under the AM0 spectrum at 25 °C. In addition, the In0.01Ga0.99As middle subcell structure was focused by optimizing in order to improve the anti radiation ability of triple-junction solar cells, and the remaining factor of conversion efficiency for middle subcell structure was enhanced from 84% to 92%. Finally, the remaining factor of external quantum efficiency for triple-junction solar cells was increased from 80% to 85.5%.

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

NASA Astrophysics Data System (ADS)

Dinetta, L. C.; Hannon, M. H.

1995-10-01

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.

1995-01-01

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Angle-depended photocurrent characteristics of cascade photoelectric converters on the base of homogeneous semiconductor

NASA Astrophysics Data System (ADS)

Arbuzov, Yuri D.; Evdokimov, Vladimir M.; Shepovalova, Olga V.

2018-05-01

Angle-dependent spectral photoresponse characteristics for theoretically perfect and physically implementable tunnel cascade (multi-junction) photoelectric converters (PC), for example high-voltage planar PV cells, have been studied as functions of technological parameters and number of single PCs in cascade. Angle-dependent spectral photoresponse characteristics values for real cascade silicon structures have been determined in visible and ultraviolet radiation spectra. Characteristic values of radiation incidence angle corresponding to the twofold photocurrent reduction in relation to normal incidence have been found depending on the number of single PCs in cascade, `dead' layer thickness of tunnel junction and photosensitivity of the base PC. The possibility and practicability of solar trackers use in PV systems with proposed PCs under study have been evaluated.

Improved High/Low Junction Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

1986-01-01

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

Complexity in neuronal noise depends on network interconnectivity.

PubMed

Serletis, Demitre; Zalay, Osbert C; Valiante, Taufik A; Bardakjian, Berj L; Carlen, Peter L

2011-06-01

"Noise," or noise-like activity (NLA), defines background electrical membrane potential fluctuations at the cellular level of the nervous system, comprising an important aspect of brain dynamics. Using whole-cell voltage recordings from fast-spiking stratum oriens interneurons and stratum pyramidale neurons located in the CA3 region of the intact mouse hippocampus, we applied complexity measures from dynamical systems theory (i.e., 1/f(γ) noise and correlation dimension) and found evidence for complexity in neuronal NLA, ranging from high- to low-complexity dynamics. Importantly, these high- and low-complexity signal features were largely dependent on gap junction and chemical synaptic transmission. Progressive neuronal isolation from the surrounding local network via gap junction blockade (abolishing gap junction-dependent spikelets) and then chemical synaptic blockade (abolishing excitatory and inhibitory post-synaptic potentials), or the reverse order of these treatments, resulted in emergence of high-complexity NLA dynamics. Restoring local network interconnectivity via blockade washout resulted in resolution to low-complexity behavior. These results suggest that the observed increase in background NLA complexity is the result of reduced network interconnectivity, thereby highlighting the potential importance of the NLA signal to the study of network state transitions arising in normal and abnormal brain dynamics (such as in epilepsy, for example).

Monolithic multi-color light emission/detection device

DOEpatents

Wanlass, M.W.

1995-02-21

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber. 5 figs.

Progress towards a 30% efficient GaInP/Si tandem solar cells

DOE PAGES

Essig, Stephanie; Ward, Scott; Steiner, Myles A.; ...

2015-08-28

The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Furthermore, higher efficiencies can be achieved bymore » using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.« less

High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

NASA Technical Reports Server (NTRS)

Daud, Taher (Inventor); Kachare, Akaram H. (Inventor)

1986-01-01

A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

Three junction holographic micro-scale PV system

NASA Astrophysics Data System (ADS)

Wu, Yuechen; Vorndran, Shelby; Ayala Pelaez, Silvana; Kostuk, Raymond K.

2016-09-01

In this work a spectrum splitting micro-scale concentrating PV system is evaluated to increase the conversion efficiency of flat panel PV systems. In this approach, the dispersed spectrum splitting concentration systems is scaled down to a small size and structured in an array. The spectrum splitting configuration allows the use of separate single bandgap PV cells that increase spectral overlap with the incident solar spectrum. This results in an overall increase in the spectral conversion efficiency of the resulting system. In addition other benefits of the micro-scale PV system are retained such reduced PV cell material requirements, more versatile interconnect configurations, and lower heat rejection requirements that can lead to a lower cost system. The system proposed in this work consists of two cascaded off-axis holograms in combination with a micro lens array, and three types of PV cells. An aspherical lens design is made to minimize the dispersion so that higher concentration ratios can be achieved for a three-junction system. An analysis methodology is also developed to determine the optical efficiency of the resulting system, the characteristics of the dispersed spectrum, and the overall system conversion efficiency for a combination of three types of PV cells.

Voltage gradients in solar array cavities as possible breakdown sites in spacecraft-charging-induced discharges

NASA Technical Reports Server (NTRS)

Stevens, N. J.; Mills, H. E.; Orange, L.

1981-01-01

A possible explanation for environmentally-induced discharges on geosynchronous satellites exists in the electric fields formed in the cavities between solar cells - the small gaps formed by the cover slides, solar cells, metallic interconnects and insulating substrate. When exposed to a substorm environment, the cover slides become less negatively charged than the spacecraft ground. If the resultant electric field becomes large enough, then the interconnect could emit electrons (probably by field emission) which could be accelerated to space by the positive voltage on the covers. An experimental study was conducted using a small solar array segment in which the interconnect potential was controlled by a power supply while the cover slides were irradiated by monoenergetic electrons. It was found that discharges could be triggered when the interconnect potential became at least 500 volts negative with respect to the cover slides. Analytical modeling of satellites exposed to substorm environments indicates that such gradients are possible. Therefore, it appears that this trigger mechanism for discharges is possible.

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE PAGES

Perl, Emmett E.; Simon, John; Friedman, Daniel J.; ...

2018-01-12

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Friedman, Daniel J.

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.

2005-01-01

Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bishnoi, Dimple

In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including “waste heat” from the sun’s energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate bandmore » setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.« less

Laser microprocessing technologies for automotive, flexible electronics, and solar energy sectors

NASA Astrophysics Data System (ADS)

Nikumb, Suwas; Bathe, Ravi; Knopf, George K.

2014-10-01

Laser microprocessing technologies offer an important tool to fulfill the needs of many industrial sectors. In particular, there is growing interest in applications of these processes in the manufacturing areas such as automotive parts fabrication, printable electronics and solar energy panels. The technology is primarily driven by our understanding of the fundamental laser-material interaction, process control strategies and the advancement of significant fabrication experience over the past few years. The wide-ranging operating parameters available with respect to power, pulse width variation, beam quality, higher repetition rates as well as precise control of the energy deposition through programmable pulse shaping technologies, enables pre-defined material removal, selective scribing of individual layer within a stacked multi-layer thin film structure, texturing of material surfaces as well as precise introduction of heat into the material to monitor its characteristic properties are a few examples. In this research, results in the area of laser surface texturing of metals for added hydrodynamic lubricity to reduce friction, processing of ink-jet printed graphene oxide for flexible printed electronic circuit fabrication and scribing of multi-layer thin films for the development of photovoltaic CuInGaSe2 (CIGS) interconnects for solar panel devices will be discussed.

Design solutions for the solar cell interconnect fatigue fracture problem

NASA Technical Reports Server (NTRS)

Mon, G. R.; Ross, R. G., Jr.

1982-01-01

Mechanical fatigue of solar cell interconnects is a major failure mechanism in photovoltaic arrays. A comprehensive approach to the reliability design of interconnects, together with extensive design data for the fatigue properties of copper interconnects, has been published. This paper extends the previous work, developing failure prediction (fatigue) data for additional interconnect material choices, including aluminum and a variety of copper-Invar and copper-steel claddings. An improved global fatigue function is used to model the probability-of-failure statistics of each material as a function of level and number of cycles of applied strain. Life-cycle economic analyses are used to evaluate the relative merits of each material choce. The copper-Invar clad composites demonstrate superior performance over pure copper. Aluminum results are disappointing.

Simultaneous junction formation

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1984-01-01

High-risk, high-payoff improvements to a baseline process sequence of simultaneous junction formation of silicon solar cells are discussed. The feasibility of simultaneously forming front and back junctions of solar cells using liquid dopants on dendritic web silicon was studied. Simultaneous diffusion was compared to sequential diffusion. A belt furnace for the diffusion process was tested.

Dilute group III-V nitride intermediate band solar cells with contact blocking layers

DOEpatents

Walukiewicz, Wladyslaw; Yu, Kin Man

2015-02-24

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA

2012-07-31

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

77 FR 13121 - Solar Energy Industries Association: Notice of Petition for Rulemaking

Federal Register 2010, 2011, 2012, 2013, 2014

2012-03-05

... its small generator interconnection rules and procedures \\1\\ for solar electric generation. \\1\\ Standardization of Small Generator Interconnection Agreements and Procedures, Order No. 2006, FERC Stats. & Regs... First Street NE., Washington, DC 20426. This filing is accessible on-line at http://www.ferc.gov , using...

DGIC Interconnection Insights | Distributed Generation Interconnection

Science.gov Websites

Center and Energy Analysis Group. NREL researchers examined PV project data from more than 30,000 solar permission to operate. "This report represents the first data-driven evaluation of how PV deployment additional insights on the research effort and report findings, check out STAT Chat (the "Solar

UNISAT-3 Power System

NASA Astrophysics Data System (ADS)

Santoni, Fabio; Piergentili, Fabrizio; Bulgarelli, Fabio; Graziani, Filippo

2005-05-01

An overview of the UNISAT-3 microsatellite power subsystem is given. This is an educational, low weight and low cost microsatellite designed, built, launched and operated in space by students and professors of Scuola di Ingegneria Aerospaziale, at University of Rome "La Sapienza". The satellite power system is based on terrestrial technology solar arrays and NiCd batteries. The microsatellite hosts other solar arrays, including multi-junction solar cells and mono- crystalline silicon high efficiency solar cells, in order to compare their behaviour in orbit. Moreover a MPPT (Maximum Power Point Tracking ) system has been designed and tested, and it is a technological payload of UNISAT-3. The MPPT design follows the studies performed in the field of solar powered racing cars, with modifications to make the system suitable for use in space. The system design, numerical simulation and hardware ground testing are described in the paper. The experiment and the performance evaluation criterion are described, together with the preliminary results of the first eight months of operation in orbit.

Catalysts for Lightweight Solar Fuels Generation

DTIC Science & Technology

2017-03-10

single bandgap solar cells to OER catalysts could lead to very high solar -to-fuel efficiencies. Figure 3 illustrates a PV -EC utilizing a PV , an...3- or 4 -single junction c-Si solar cells connected in series. Considering a PV -EC device based on commercially available single junction-Si solar ...30.8%) with open circuit voltage and short circuit current density ; total plot area is scaled to incident solar power (100 mW cm–2). The PV -EC

Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping

NASA Astrophysics Data System (ADS)

Dong, Gangqiang; Liu, Fengzhen; Liu, Jing; Zhang, Hailong; Zhu, Meifang

2013-12-01

A radial p-n junction solar cell based on vertically free-standing silicon nanowire (SiNW) array is realized using a novel low-temperature and shallow phosphorus doping technique. The SiNW arrays with excellent light trapping property were fabricated by metal-assisted chemical etching technique. The shallow phosphorus doping process was carried out in a hot wire chemical vapor disposition chamber with a low substrate temperature of 250°C and H2-diluted PH3 as the doping gas. Auger electron spectroscopy and Hall effect measurements prove the formation of a shallow p-n junction with P atom surface concentration of above 1020 cm-3 and a junction depth of less than 10 nm. A short circuit current density of 37.13 mA/cm2 is achieved for the radial p-n junction SiNW solar cell, which is enhanced by 7.75% compared with the axial p-n junction SiNW solar cell. The quantum efficiency spectra show that radial transport based on the shallow phosphorus doping of SiNW array improves the carrier collection property and then enhances the blue wavelength region response. The novel shallow doping technique provides great potential in the fabrication of high-efficiency SiNW solar cells.

All-silicon tandem solar cells: Practical limits for energy conversion and possible routes for improvement

NASA Astrophysics Data System (ADS)

Jia, Xuguang; Puthen-Veettil, Binesh; Xia, Hongze; Yang, Terry Chien-Jen; Lin, Ziyun; Zhang, Tian; Wu, Lingfeng; Nomoto, Keita; Conibeer, Gavin; Perez-Wurfl, Ivan

2016-06-01

Silicon nanocrystals (Si NCs) embedded in a dielectric matrix is regarded as one of the most promising materials for the third generation photovoltaics, owing to their tunable bandgap that allows fabrication of optimized tandem devices. Previous work has demonstrated fabrication of Si NCs based tandem solar cells by sputter-annealing of thin multi-layers of silicon rich oxide and SiO2. However, these device efficiencies were much lower than expected given that their theoretical values are much higher. Thus, it is necessary to understand the practical conversion efficiency limits for these devices. In this article, practical efficiency limits of Si NC based double junction tandem cells determined by fundamental material properties such as minority carrier, mobility, and lifetime are investigated. The practical conversion efficiency limits for these devices are significantly different from the reported efficiency limits which use Shockley-Queisser assumptions. Results show that the practical efficiency limit of a double junction cell (1.6 eV Si NC top cell and a 25% efficient c-Si PERL cell as the bottom cell) is 32%. Based on these results suggestions for improvement to the performance of Si nanocrystal based tandem solar cells in terms of the different parameters that were simulated are presented.

Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

DOEpatents

Wanlass, M.W.

1994-12-27

A single-junction solar cell is described having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of ''pinning'' the optimum band gap for a wide range of operating conditions at a value of 1.14[+-]0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap. 7 figures.

Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

DOEpatents

Wanlass, Mark W.

1994-01-01

A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

Photovoltaic Power for Future NASA Missions

NASA Technical Reports Server (NTRS)

Landis, Geoffrey; Bailey, Sheila G.; Lyons, Valerie J. (Technical Monitor)

2002-01-01

Recent advances in crystalline solar cell technology are reviewed. Dual-junction and triple-junction solar cells are presently available from several U. S. vendors. Commercially available triple-junction cells consisting of GaInP, GaAs, and Ge layers can produce up to 27% conversion efficiency in production lots. Technology status and performance figures of merit for currently available photovoltaic arrays are discussed. Three specific NASA mission applications are discussed in detail: Mars surface applications, high temperature solar cell applications, and integrated microelectronic power supplies for nanosatellites.

New high-efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Daud, T.; Crotty, G. T.

1985-01-01

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

Theory of back-surface-field solar cells

NASA Technical Reports Server (NTRS)

Vonroos, O.

1979-01-01

Report describes simple concise theory of back-surface-field (BSF) solar cells (npp + junctions) based on Shockley's depletion-layer approximation and cites superiority of two-junction devices over conventional unijunction cells.

Simulation of the Mars surface solar spectra for optimized performance of triple junction solar cells

NASA Technical Reports Server (NTRS)

Edmondson, Kenneth M.; Joslin, David E.; Fetzer, Chris M.; King, Richard R.; Karam, Nasser H.; Mardesich, Nick; Stella, Paul M.; Rapp, Donald; Mueller, Robert

2005-01-01

The unparalleled success of the Mars Exploration Rovers (MER) powered by GaInP/GaAs/Ge triple-junction solar cells has demonstrated a lifetime for the rovers that exceeded the baseline mission duration by more than a factor of five.

Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; France, Ryan M.; Steiner, Myles A.

Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be appliedmore » to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.« less

Inorganic Photovoltaics Materials and Devices: Past, Present, and Future

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Bailey, Sheila G.; Rafaelle, Ryne P.

2005-01-01

This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.

US Naval Research Laboratory's Current Space Photovoltaic Experiemtns

NASA Astrophysics Data System (ADS)

Jenkins, Phillip; Walters, Robert; Messenger, Scott; Krasowski, Michael

2008-09-01

The US Naval Research Laboratory (NRL) has a rich history conducting space photovoltaic (PV) experiments starting with Vanguard I, the first solar powered satellite in 1958. Today, NRL in collaboration with the NASA Glenn Research Center, is engaged in three flight experiments demonstrating a wide range of PV technologies in both LEO and HEO orbits. The Forward Technology Solar Cell Experiment (FTSCE)[1], part of the 5th Materials on the International Space Station Experiment (MISSE-5), flew for 13 months on the International Space Station in 2005-2006. The FTSCE provided in-situ I-V monitoring of advanced III-V multi-junction cells and laboratory prototypes of thin film and other next generation technologies. Two experiments under development will provide more opportunities to demonstrate advanced solar cells and characterization electronics that are easily integrated on a wide variety of spacecraft bus architectures.

Atomic oxygen degradation of Intelsat 4-type solar array interconnects: Laboratory investigations

NASA Technical Reports Server (NTRS)

Koontz, S. L.; Cross, J. B.; Hoffbauer, M. A.; Kirkendahl, T. D.

1991-01-01

A Hughes 506 type communication satellite belonging to the Intelsat organization was marooned in low Earth orbit on March 14, 1990, following failure of the Titan third stage to separate properly. The satellite, Intelsat VI, was designed for service in geosynchronous orbit and contains several material configurations which are susceptible to attack by atomic oxygen. Analysis showed the silver foil interconnects in the satellite photovoltaic array to be the key materials issue because the silver is exposed directly to the atomic oxygen ram flux. The results are reported of atomic oxygen degradation testing of Intelsat VI type silver foil interconnects both as virgin material and in a configured solar cell element. Test results indicate that more than 80 pct. of the original thickness of silver in the Intelsat VI solar array interconnects should remain after completion of the proposed Space Shuttle rescue and/or reboost mission.

Development and fabrication of a solar cell junction processing system

NASA Technical Reports Server (NTRS)

1984-01-01

A processing system capable of producing solar cell junctions by ion implantation followed by pulsed electron beam annealing was developed and constructed. The machine was to be capable of processing 4-inch diameter single-crystal wafers at a rate of 10(7) wafers per year. A microcomputer-controlled pulsed electron beam annealer with a vacuum interlocked wafer transport system was designed, built and demonstrated to produce solar cell junctions on 4-inch wafers with an AMI efficiency of 12%. Experiments showed that a non-mass-analyzed (NMA) ion beam could implant 10 keV phosphorous dopant to form solar cell junctions which were equivalent to mass-analyzed implants. A NMA ion implanter, compatible with the pulsed electron beam annealer and wafer transport system was designed in detail but was not built because of program termination.

DGIC Interconnection Insights | Distributed Generation Interconnection

Science.gov Websites

ripe for cost reductions. Utilities, public service commissions, legislators, and even developers can timelines, strand assets, stress debt service, and ultimately drive up the cost of solar energy. NREL ). The financier also indicated that solar's cost of capital, on the whole, is still 100-200 basis points

78 FR 15719 - Interconnect Solar Development LLC; Notice of Petition for Enforcement

Federal Register 2010, 2011, 2012, 2013, 2014

2013-03-12

... (PURPA), 16 U.S.C. 824a-3(h)(2006), Interconnect Solar Development LLC filed a Petition for Enforcement... Idaho Public Utilities Commission and Idaho Power; find that their actions violated PURPA; and to take any action deemed necessary to enforce the requirements of PURPA. Any person desiring to intervene or...

Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

NASA Astrophysics Data System (ADS)

Wan, Danny; Manfrini, Mauricio; Vaysset, Adrien; Souriau, Laurent; Wouters, Lennaert; Thiam, Arame; Raymenants, Eline; Sayan, Safak; Jussot, Julien; Swerts, Johan; Couet, Sebastien; Rassoul, Nouredine; Babaei Gavan, Khashayar; Paredis, Kristof; Huyghebaert, Cedric; Ercken, Monique; Wilson, Christopher J.; Mocuta, Dan; Radu, Iuliana P.

2018-04-01

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for spin torque majority gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step towards the realization of a majority gate. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications.

Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schnabel, Manuel; Tamboli, Adele C; Warren, Emily L

Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.

Enhancing light absorption within the carrier transport length in quantum junction solar cells.

PubMed

Fu, Yulan; Hara, Yukihiro; Miller, Christopher W; Lopez, Rene

2015-09-10

Colloidal quantum dot (CQD) solar cells have attracted tremendous attention because of their tunable absorption spectrum window and potentially low processing cost. Recently reported quantum junction solar cells represent a promising approach to building a rectifying photovoltaic device that employs CQD layers on each side of the p-n junction. However, the ultimate efficiency of CQD solar cells is still highly limited by their high trap state density in both p- and n-type CQDs. By modeling photonic structures to enhance the light absorption within the carrier transport length and by ensuring that the carrier generation and collection efficiencies were both augmented, our work shows that overall device current density could be improved. We utilized a two-dimensional numerical model to calculate the characteristics of patterned CQD solar cells based on a simple grating structure. Our calculation predicts a short circuit current density as high as 31  mA/cm², a value nearly 1.5 times larger than that of the conventional flat design, showing the great potential value of patterned quantum junction solar cells.

High Aspect Ratio Semiconductor Heterojunction Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Redwing, Joan; Mallouk, Tom; Mayer, Theresa

2013-05-17

The project focused on the development of high aspect ratio silicon heterojunction (HARSH) solar cells. The solar cells developed in this study consisted of high density vertical arrays of radial junction silicon microwires/pillars formed on Si substrates. Prior studies have demonstrated that vertical Si wire/pillar arrays enable reduced reflectivity and improved light trapping characteristics compared to planar solar cells. In addition, the radial junction structure offers the possibility of increased carrier collection in solar cells fabricated using material with short carrier diffusion lengths. However, the high junction and surface area of radial junction Si wire/pillar array devices can be problematicmore » and lead to increased diode leakage and enhanced surface recombination. This study investigated the use of amorphous hydrogenated Si in the form of a heterojunction-intrinsic-thin layer (HIT) structure as a junction formation method for these devices. The HIT layer structure has widely been employed to reduce surface recombination in planar crystalline Si solar cells. Consequently, it was anticipated that it would also provide significant benefits to the performance of radial junction Si wire/pillar array devices. The overall goals of the project were to demonstrate a HARSH cell with a HIT-type structure in the radial junction Si wire/pillar array configuration and to develop potentially low cost pathways to fabricate these devices. Our studies demonstrated that the HIT structure lead to significant improvements in the open circuit voltage (V oc>0.5) of radial junction Si pillar array devices compared to devices fabricated using junctions formed by thermal diffusion or low pressure chemical vapor deposition (LPCVD). In addition, our work experimentally demonstrated that the radial junction structure lead to improvements in efficiency compared to comparable planar devices for devices fabricated using heavily doped Si that had reduced carrier diffusion lengths. Furthermore, we made significant advances in employing the bottom-up vapor-liquid-solid (VLS) growth technique for the fabrication of the Si wire arrays. Our work elucidated the effects of growth conditions and substrate pattern geometry on the growth of large area Si microwire arrays grown with SiCl4. In addition, we also developed a process to grow p-type Si nanowire arrays using aluminum as the catalyst metal instead of gold. Finally, our work demonstrated the feasibility of growing vertical arrays of Si wires on non-crystalline glass substrates using polycrystalline Si template layers. The accomplishments demonstrated in this project will pave the way for future advances in radial junction wire array solar cells.« less

Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells with Graphene Quantum Dots

PubMed Central

Lin, Tzu-Neng; Santiago, Svette Reina Merden S.; Zheng, Jie-An; Chao, Yu-Chiang; Yuan, Chi-Tsu; Shen, Ji-Lin; Wu, Chih-Hung; Lin, Cheng- An J.; Liu, Wei-Ren; Cheng, Ming-Chiang; Chou, Wu-Ching

2016-01-01

Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the InGaP top subcell. PMID:27982073

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Surface photovoltage method extended to silicon solar cell junction

NASA Technical Reports Server (NTRS)

Wang, E. Y.; Baraona, C. R.; Brandhorst, H. W., Jr.

1974-01-01

The conventional surface photovoltage (SPV) method is extended to the measurement of the minority carrier diffusion length in diffused semiconductor junctions of the type used in a silicon solar cell. The minority carrier diffusion values obtained by the SPV method agree well with those obtained by the X-ray method. Agreement within experimental error is also obtained between the minority carrier diffusion lengths in solar cell diffusion junctions and in the same materials with n-regions removed by etching, when the SPV method was used in the measurements.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Rear surface effects in high efficiency silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wenham, S.R.; Robinson, S.J.; Dai, X.

1994-12-31

Rear surface effects in PERL solar cells can lead not only to degradation in the short circuit current and open circuit voltage, but also fill factor. Three mechanisms capable of changing the effective rear surface recombination velocity with injection level are identified, two associated with oxidized p-type surfaces, and the third with two dimensional effects associated with a rear floating junction. Each of these will degrade the fill factor if the range of junction biases corresponding to the rear surface transition, coincides with the maximum power point. Despite the identified non idealities, PERL cells with rear floating junctions (PERF cells)more » have achieved record open circuit voltages for silicon solar cells, while simultaneously achieving fill factor improvements relative to standard PERL solar cells. Without optimization, a record efficiency of 22% has been demonstrated for a cell with a rear floating junction. The results of both theoretical and experimental studies are provided.« less

Understanding Processes and Timelines for Distributed Photovoltaic

Science.gov Websites

data from more than 30,000 PV systems across 87 utilities in 16 states to better understand how solar photovoltaic (PV) interconnection process time frames in the United States. This study includes an analysis of Analysis Metrics" that shows the four steps involved in the utility interconnection process for solar

Real-space microscopic electrical imaging of n+-p junction beneath front-side Ag contact of multicrystalline Si solar cells

NASA Astrophysics Data System (ADS)

Jiang, C.-S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

2012-04-01

We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, C. S.; Li, Z. G.; Moutinho, H. R.

2012-04-15

We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, whichmore » is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.« less

Rapid thermal cycling of new technology solar array blanket coupons

NASA Technical Reports Server (NTRS)

Scheiman, David A.; Smith, Bryan K.; Kurland, Richard M.; Mesch, Hans G.

1990-01-01

NASA Lewis Research Center is conducting thermal cycle testing of a new solar array blanket technologies. These technologies include test coupons for Space Station Freedom (SSF) and the advanced photovoltaic solar array (APSA). The objective of this testing is to demonstrate the durability or operational lifetime of the solar array interconnect design and blanket technology within a low earth orbit (LEO) or geosynchronous earth orbit (GEO) thermal cycling environment. Both the SSF and the APSA array survived all rapid thermal cycling with little or no degradation in peak performance. This testing includes an equivalent of 15 years in LEO for SSF test coupons and 30 years of GEO plus ten years of LEO for the APSA test coupon. It is concluded that both the parallel gap welding of the SSF interconnects and the soldering of the APSA interconnects are adequately designed to handle the thermal stresses of space environment temperature extremes.

Simulation of the Mars Surface Solar Spectra for Optimized Performance of Triple-Junction Solar Cells

NASA Technical Reports Server (NTRS)

Edmondson, Kenneth M.; Joslin, David E.; Fetzer, Chris M.; King, RIchard R.; Karam, Nasser H.; Mardesich, Nick; Stella, Paul M.; Rapp, Donald; Mueller, Robert

2007-01-01

The unparalleled success of the Mars Exploration Rovers (MER) powered by GaInP/GaAs/Ge triple-junction solar cells has demonstrated a lifetime for the rovers that exceeded the baseline mission duration by more than a factor of five. This provides confidence in future longer-term solar powered missions on the surface of Mars. However, the solar cells used on the rovers are not optimized for the Mars surface solar spectrum, which is attenuated at shorter wavelengths due to scattering by the dusty atmosphere. The difference between the Mars surface spectrum and the AM0 spectrum increases with solar zenith angle and optical depth. The recent results of a program between JPL and Spectrolab to optimize GaInP/GaAs/Ge solar cells for Mars are presented. Initial characterization focuses on the solar spectrum at 60-degrees zenith angle at an optical depth of 0.5. The 60-degree spectrum is reduced to 1/6 of the AM0 intensity and is further reduced in the blue portion of the spectrum. JPL has modeled the Mars surface solar spectra, modified an X-25 solar simulator, and completed testing of Mars-optimized solar cells previously developed by Spectrolab with the modified X-25 solar simulator. Spectrolab has focused on the optimization of the higher efficiency Ultra Triple-Junction (UTJ) solar cell for Mars. The attenuated blue portion of the spectrum requires the modification of the top sub-cell in the GaInP/GaAs/Ge solar cell for improved current balancing in the triple-junction cell. Initial characterization confirms the predicted increase in power and current matched operation for the Mars surface 60-degree zenith angle solar spectrum.

A comparison of light-harvesting performance of silicon nanocones and nanowires for radial-junction solar cells.

PubMed

Li, Yingfeng; Li, Meicheng; Fu, Pengfei; Li, Ruike; Song, Dandan; Shen, Chao; Zhao, Yan

2015-06-26

Silicon nanorod based radial-junction solar cells are competitive alternatives to traditional planar silicon solar cells. In various silicon nanorods, nanocone is always considered to be better than nanowire in light-absorption. Nevertheless, we find that this notion isn't absolutely correct. Silicon nanocone is indeed significantly superior over nanowire in light-concentration due to its continuous diameters, and thus resonant wavelengths excited. However, the concentrated light can't be effectively absorbed and converted to photogenerated carriers, since its propagation path in silicon nanocone is shorter than that in nanowire. The results provide critical clues for the design of silicon nanorod based radial-junction solar cells.

A high efficiency dual-junction solar cell implemented as a nanowire array.

PubMed

Yu, Shuqing; Witzigmann, Bernd

2013-01-14

In this work, we present an innovative design of a dual-junction nanowire array solar cell. Using a dual-diameter nanowire structure, the solar spectrum is separated and absorbed in the core wire and the shell wire with respect to the wavelength. This solar cell provides high optical absorptivity over the entire spectrum due to an electromagnetic concentration effect. Microscopic simulations were performed in a three-dimensional setup, and the optical properties of the structure were evaluated by solving Maxwell's equations. The Shockley-Queisser method was employed to calculate the current-voltage relationship of the dual-junction structure. Proper design of the geometrical and material parameters leads to an efficiency of 39.1%.

24 CFR 3285.802 - Structural interconnection of multi-section homes.

Code of Federal Regulations, 2011 CFR

2011-04-01

...-section homes. 3285.802 Section 3285.802 Housing and Urban Development Regulations Relating to Housing and..., DEPARTMENT OF HOUSING AND URBAN DEVELOPMENT MODEL MANUFACTURED HOME INSTALLATION STANDARDS Exterior and Interior Close-Up § 3285.802 Structural interconnection of multi-section homes. (a) For multi-section homes...

24 CFR 3285.802 - Structural interconnection of multi-section homes.

Code of Federal Regulations, 2010 CFR

2010-04-01

...-section homes. 3285.802 Section 3285.802 Housing and Urban Development Regulations Relating to Housing and..., DEPARTMENT OF HOUSING AND URBAN DEVELOPMENT MODEL MANUFACTURED HOME INSTALLATION STANDARDS Exterior and Interior Close-Up § 3285.802 Structural interconnection of multi-section homes. (a) For multi-section homes...

24 CFR 3285.802 - Structural interconnection of multi-section homes.

Code of Federal Regulations, 2013 CFR

2013-04-01

...-section homes. 3285.802 Section 3285.802 Housing and Urban Development Regulations Relating to Housing and..., DEPARTMENT OF HOUSING AND URBAN DEVELOPMENT MODEL MANUFACTURED HOME INSTALLATION STANDARDS Exterior and Interior Close-Up § 3285.802 Structural interconnection of multi-section homes. (a) For multi-section homes...

Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

PubMed

Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

2016-07-20

There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

Thermodynamic efficiency limits of classical and bifacial multi-junction tandem solar cells: An analytical approach

NASA Astrophysics Data System (ADS)

Alam, Muhammad Ashraful; Khan, M. Ryyan

2016-10-01

Bifacial tandem cells promise to reduce three fundamental losses (i.e., above-bandgap, below bandgap, and the uncollected light between panels) inherent in classical single junction photovoltaic (PV) systems. The successive filtering of light through the bandgap cascade and the requirement of current continuity make optimization of tandem cells difficult and accessible only to numerical solution through computer modeling. The challenge is even more complicated for bifacial design. In this paper, we use an elegantly simple analytical approach to show that the essential physics of optimization is intuitively obvious, and deeply insightful results can be obtained with a few lines of algebra. This powerful approach reproduces, as special cases, all of the known results of conventional and bifacial tandem cells and highlights the asymptotic efficiency gain of these technologies.

The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

ALLERMAN,ANDREW A.; BANKS,JAMES C.; GEE,JAMES M.

1999-09-16

InGaAsN alloys are a promising material for increasing the efficiency of multi-junction solar cells now used for satellite power systems. However, the growth of these dilute N containing alloys has been challenging with further improvements in material quality needed before the solar cell higher efficiencies are realized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and poor surface morphologies. The growth rate was found to depend on not only the total group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon tetrachloride and dimethylzinc were effective for p-type doping. Disilane was not an effectivemore » n-type dopant while SiCl4 did result in n-type material but only a narrow range of electron concentrations (2-5e17cm{sup -3}) were achieved.« less

Cu6Sn5 Whiskers Precipitated in Sn3.0Ag0.5Cu/Cu Interconnection in Concentrator Silicon Solar Cells Solder Layer

PubMed Central

Zhang, Liang; Liu, Zhi-quan; Yang, Fan; Zhong, Su-juan

2017-01-01

Cu6Sn5 whiskers precipitated in Sn3.0Ag0.5Cu/Cu interconnection in concentrator silicon solar cells solder layer were found and investigated after reflow soldering and during aging. Ag3Sn fibers can be observed around Cu6Sn5 whiskers in the matrix microstructure, which can play an active effect on the reliability of interconnection. Different morphologies of Cu6Sn5 whiskers can be observed, and hexagonal rod structure is the main morphology of Cu6Sn5 whiskers. A hollow structure can be observed in hexagonal Cu6Sn5 whiskers, and a screw dislocation mechanism was used to represent the Cu6Sn5 growth. Based on mechanical property testing and finite element simulation, Cu6Sn5 whiskers were regarded as having a negative effect on the durability of Sn3.0Ag0.5Cu/Cu interconnection in concentrator silicon solar cells solder layer. PMID:28772686

InN: A material with photovoltaic promise and challenges

NASA Astrophysics Data System (ADS)

Trybus, Elaissa; Namkoong, Gon; Henderson, Walter; Burnham, Shawn; Doolittle, W. Alan; Cheung, Maurice; Cartwright, Alexander

2006-03-01

The potential of InN as a photovoltaic material is described. For solar applications, several key developments such as p-type doping and solid-state rectifying junctions have yet to be demonstrated. However, the ability of InGaN materials to optimally span the solar spectrum offers a tantalizing solution for high-efficiency photovoltaics albeit in an inherently lattice mismatched material system. For this reason, the characteristics of InN grown on (1 1 1)-oriented germanium and (0 0 0 1)-plane sapphire substrates via molecular beam epitaxy for the application of InN solar cells is described. To provide an efficient sub-cell interconnect for tandem solar cells, epitaxial Al was deposited on a germanium substrate with InN grown on this epitaxial aluminum layer. Consistent with previous results, the electrical characteristics of n-InN/p-Ge, n-InN/n-Ge, and n-InN/Al/Ge were measured and showed no rectifying behavior. As evidenced by X-ray diffraction, minute amounts of unintentional oxygen incorporation during InN growth forms a secondary phase, tentatively assigned to an indium oxynitride, InON x, phase. Photoluminescence measurements of the InN/InON x show spectral peaks at ˜0.7 and ˜3.8 eV consistent with the bulk excitonic bandgap of the two materials. Photoluminescence was also found at ˜1.7 eV and shown to be related to emission from the sapphire substrates.

Design issues for optimum solar cell configuration

NASA Astrophysics Data System (ADS)

Kumar, Atul; Thakur, Ajay D.

2018-05-01

A computer based simulation of solar cell structure is performed to study the optimization of pn junction configuration for photovoltaic action. The fundamental aspects of photovoltaic action viz, absorption, separation collection, and their dependence on material properties and deatails of device structures is discussed. Using SCAPS 1D we have simulated the ideal pn junction and shown the effect of band offset and carrier densities on solar cell performance. The optimum configuration can be achieved by optimizing transport of carriers in pn junction under effect of field dependent recombination (tunneling) and density dependent recombination (SRH, Auger) mechanisms.

Multi-Quantum Well Structures to Improve the Performance of Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Samberg, Joshua Paul

Current, lattice matched triple junction solar cell efficiency is approximately 44% at a solar concentration of 942x. Higher efficiency for such cells can be realized with the development of a 1eV bandgap material lattice matched to Ge. One of the more promising materials for this application is that of the InGaAs/GaAsP multi-quantum well (MQW) structure. By inserting a stress/strain-balanced InGaAs/GaAsP MQW structure into the iregion of a GaAs p-i-n diode, the absorption edge of the p-i-n diode can be red shifted with respect to that of a standard GaAs p-n diode. Compressive stress in the InGaAs wells are balanced via GaAsP barriers subjected to tensile stress. Individually, the InGaAs and GaAsP layers are grown below their critical layer thickness to prevent the formation of misfit and threading dislocations. Until recently InGaAs/GaAsP MQWs have been somewhat hindered by their usage of low phosphorus-GaAsP barriers. Presented within is the development of a high-P composition GaAsP and the merits for using such a high composition of phosphorus are discussed. It is believed that these barriers represent the highest phosphorus content to date in such a structure. By using high composition GaAsP the carriers are collected via tunneling (for barriers .30A) as opposed to thermionic emission. Thus, by utilizing thin, high content GaAsP barriers one can increase the percentage of the intrinsic region in a p-i-n structure that is comprised of the InGaAs well in addition to increasing the number of periods that can be grown for a given depletion width. However, standard MQWs of this type inherently possess undesirable compressive strain and quantum size effects (QSE) that cause the optical absorption of the InGaAs wells to blue shift. To circumvent these deleterious QSEs stress balanced, pseudomorphic InGaAs/GaAsP staggered MQWs were developed. Tunneling is still a viable mode for carrier transport in the staggered MQW structures. GaAs interfacial layers within the multi-quantum well have been found to be critical in producing quality multi-quantum well structures. The effect of the GaAs interfacial layers has been investigated. It was determined that a phosphorus carry-over had a profound effect on the absorption edge of the InGaAs wells. It was shown that the phosphorus carry-over can be prevented with sufficiently thick GaAs transition layers. Preliminary results for GaAs p-in solar cells utilizing the improved MQWs are presented. In addition to investigating the utilization of quantum wells in the i-region of a GaAs p-i-n diode to improve the efficiency of multijunction solar cells, an investigation into the effect a single GaAs:Te doped quantum well has on the performance of high bandgap InxGa1- xP:Te/Al0.6Ga 0.4As:C tunnel junctions was investigated. The insertion of 30A of GaAs:Te at the junction interface resulted in a peak current of 1000A/cm2 and a voltage drop of ~3mV for 30A/cm2 (2000x concentration). The presence of this GaAs interfacial layer also improved the uniformity across the wafer. This architecture could be used within multijunction solar cells to extend the range of usable solar concentration with minimal voltage drop.

California | Midmarket Solar Policies in the United States | Solar Research

Science.gov Websites

interconnection fee ($75-$150), pay all "non-bypassable" charges for all electricity consumed from the distribution grid, non-export facilities connecting to an IOU's transmission grid and all net-metered systems Interconnection All non-exporting systems or net metering facility Fast track Exporting facility ≤3MW on a 12 kV

Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1999-08-24

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1997-07-08

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Material Science for High-Efficiency Photovoltaics: From Advanced Optical Coatings to Cell Design for High-Temperature Applications

NASA Astrophysics Data System (ADS)

Perl, Emmett Edward

Solar cells based on III-V compound semiconductors are ideally suited to convert solar energy into electricity. The highest efficiency single-junction solar cells are made of gallium arsenide, and have attained an efficiency of 28.8%. Multiple III-V materials can be combined to construct multijunction solar cells, which have reached record efficiencies greater than 45% under concentration. III-V solar cells are also well suited to operate efficiently at elevated temperatures, due in large part to their high material quality. These properties make III-V solar cells an excellent choice for use in concentrator systems. Concentrator photovoltaic systems have attained module efficiencies that exceed 40%, and have the potential to reach the lowest levelized cost of electricity in sunny places like the desert southwest. Hybrid photovoltaic-thermal solar energy systems can utilize high-temperature III-V solar cells to simultaneously achieve dispatchability and a high sunlight-to-electricity efficiency. This dissertation explores material science to advance the state of III-V multijunction solar cells for use in concentrator photovoltaic and hybrid photovoltaic-thermal solar energy systems. The first half of this dissertation describes work on advanced optical designs to improve the efficiency of multijunction solar cells. As multijunction solar cells move to configurations with four or more subcells, they utilize a larger portion of the solar spectrum. Broadband antireflection coatings are essential to realizing efficiency gains for these state-of-the-art cells. A hybrid design consisting of antireflective nanostructures placed on top of multilayer interference-based optical coatings is developed. Antireflection coatings that utilize this hybrid approach yield unparalleled performance, minimizing reflection losses to just 0.2% on sapphire and 0.6% on gallium nitride for 300-1800nm light. Dichroic mirrors are developed for bonded 5-junction solar cells that utilize InGaN as a top junction. These designs maximize reflection of high-energy light for an InGaN top junction while minimizing reflection of low-energy light that would be absorbed by the lower four junctions. Increasing the reflectivity of high-energy photons enables a second pass of light through the InGaN cell, leading to increased absorption and a higher photocurrent. These optical designs enhanced the efficiency of a 2.65eV InGaN solar cell to a value of 3.3% under the AM0 spectrum, the highest reported efficiency for a standalone InGaN solar cell. The second half of the dissertation describes the development of III-V solar cells for high-temperature applications. As the operating temperature of a solar cell is increased, the ideal bandgap of the top junction increases. AlGaInP solar cells with bandgaps ranging from 1.9eV to 2.2eV are developed. A 2.03eV AlGaInP solar cell is demonstrated with a bandgap-voltage offset of 440mV, the lowest of any AlGaInP solar cell reported to date. Single-junction AlGaInP, GaInP, and GaAs solar cells designed for high-temperature operation are characterized up to a temperature of 400°C. The cell properties are compared to an analytical drift-diffusion model, and we find that a fundamental increase in the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. These findings provide a valuable guide to the design of any system that requires high-temperature solar cell operation.

Computer analysis of microcrystalline silicon hetero-junction solar cell with lumerical FDTD/DEVICE

NASA Astrophysics Data System (ADS)

Riaz, Muhammad; Earles, S. K.; Kadhim, Ahmed; Azzahrani, Ahmad

The computer analysis of tandem solar cell, c-Si/a-Si:H/μc-SiGe, is studied within Lumerical FDTD/Device 4.6. The optical characterization is performed in FDTD and then total generation rate is transported into DEVICE for electrical characterization. The electrical characterization of the solar cell is carried out in DEVICE. The design is implemented by staking three sub cells with band gap of 1.12eV, 1.50eV and 1.70eV, respectively. First, single junction solar cell with both a-Si and μc-SiGe absorbing layers are designed and compared. The thickness for both layers are kept the same. In a single junction, solar cell with a-Si absorbing layer, the fill factor and the efficiency are noticed as FF = 78.98%, and η = 6.03%. For μc-SiGe absorbing layer, the efficiency and fill factor are increased as η = 7.06% and FF = 84.27%, respectively. Second, for tandem thin film solar cell c-Si/a-Si:H/μc-SiGe, the fill factor FF = 81.91% and efficiency η = 9.84% have been noticed. The maximum efficiency for both single junction thin film solar cell c-Si/μc-SiGe and tandem solar cell c-Si/a-Si:H/μc-SiGe are improved with check board surface design for light trapping.

A review of recent progress in heterogeneous silicon tandem solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

2018-04-01

Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

NREL and CSEM Jointly Set New Efficiency Record with Dual-Junction Solar

Science.gov Websites

converting non-concentrated (1-sun) sunlight into electricity using a dual-junction III-V/Si solar cell. The 29.8 percent one-sun efficiency," which details the steps taken to break the previous record. His

Outdoor measurements of a photovoltaic system using diffractive spectrum-splitting and concentration

DOE PAGES

Mohammad, N.; Schulz, M.; Wang, P.; ...

2016-09-16

In a single-bandgap absorber, photons having energy less than the bandgap are not absorbed, while those having energy larger than the bandgap lose the excess energy via thermalization. We present outdoor measurements of a photovoltaic system that overcomes these losses via spectrum splitting and concentration using a planar diffractive optic. The system was comprised of the diffractive optic coupled with GaInP and CIGS solar cells. The optic provides a geometric concentration of 3X for each solar cell. It is easily fabricated by single-step grayscale lithography and it is ultra-thin with a maximum thickness of only 2.5μm. Electrical measurements under directmore » sunlight demonstrated an increase of ~25% in total output power compared to the reference case without spectrum splitting and concentration. Since different bandgaps are in the same plane, the proposed photovoltaic system successfully circumvents the lattice-matching and current-matching issues in conventional tandem multi-junction solar cells. As a result, this system is also tolerant to solar spectrum variation and fill-factor degradation of constitutive solar cells.« less

Outdoor measurements of a photovoltaic system using diffractive spectrum-splitting and concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohammad, N.; Schulz, M.; Wang, P.

In a single-bandgap absorber, photons having energy less than the bandgap are not absorbed, while those having energy larger than the bandgap lose the excess energy via thermalization. We present outdoor measurements of a photovoltaic system that overcomes these losses via spectrum splitting and concentration using a planar diffractive optic. The system was comprised of the diffractive optic coupled with GaInP and CIGS solar cells. The optic provides a geometric concentration of 3X for each solar cell. It is easily fabricated by single-step grayscale lithography and it is ultra-thin with a maximum thickness of only 2.5μm. Electrical measurements under directmore » sunlight demonstrated an increase of ~25% in total output power compared to the reference case without spectrum splitting and concentration. Since different bandgaps are in the same plane, the proposed photovoltaic system successfully circumvents the lattice-matching and current-matching issues in conventional tandem multi-junction solar cells. As a result, this system is also tolerant to solar spectrum variation and fill-factor degradation of constitutive solar cells.« less

One-Year stable perovskite solar cells by 2D/3D interface engineering

NASA Astrophysics Data System (ADS)

Grancini, G.; Roldán-Carmona, C.; Zimmermann, I.; Mosconi, E.; Lee, X.; Martineau, D.; Narbey, S.; Oswald, F.; de Angelis, F.; Graetzel, M.; Nazeeruddin, Mohammad Khaja

2017-06-01

Despite the impressive photovoltaic performances with power conversion efficiency beyond 22%, perovskite solar cells are poorly stable under operation, failing by far the market requirements. Various technological approaches have been proposed to overcome the instability problem, which, while delivering appreciable incremental improvements, are still far from a market-proof solution. Here we show one-year stable perovskite devices by engineering an ultra-stable 2D/3D (HOOC(CH2)4NH3)2PbI4/CH3NH3PbI3 perovskite junction. The 2D/3D forms an exceptional gradually-organized multi-dimensional interface that yields up to 12.9% efficiency in a carbon-based architecture, and 14.6% in standard mesoporous solar cells. To demonstrate the up-scale potential of our technology, we fabricate 10 × 10 cm2 solar modules by a fully printable industrial-scale process, delivering 11.2% efficiency stable for >10,000 h with zero loss in performances measured under controlled standard conditions. This innovative stable and low-cost architecture will enable the timely commercialization of perovskite solar cells.

One-Year stable perovskite solar cells by 2D/3D interface engineering

PubMed Central

Grancini, G.; Roldán-Carmona, C.; Zimmermann, I.; Mosconi, E.; Lee, X.; Martineau, D.; Narbey, S.; Oswald, F.; De Angelis, F.; Graetzel, M.; Nazeeruddin, Mohammad Khaja

2017-01-01

Despite the impressive photovoltaic performances with power conversion efficiency beyond 22%, perovskite solar cells are poorly stable under operation, failing by far the market requirements. Various technological approaches have been proposed to overcome the instability problem, which, while delivering appreciable incremental improvements, are still far from a market-proof solution. Here we show one-year stable perovskite devices by engineering an ultra-stable 2D/3D (HOOC(CH2)4NH3)2PbI4/CH3NH3PbI3 perovskite junction. The 2D/3D forms an exceptional gradually-organized multi-dimensional interface that yields up to 12.9% efficiency in a carbon-based architecture, and 14.6% in standard mesoporous solar cells. To demonstrate the up-scale potential of our technology, we fabricate 10 × 10 cm2 solar modules by a fully printable industrial-scale process, delivering 11.2% efficiency stable for >10,000 h with zero loss in performances measured under controlled standard conditions. This innovative stable and low-cost architecture will enable the timely commercialization of perovskite solar cells. PMID:28569749

One-Year stable perovskite solar cells by 2D/3D interface engineering.

PubMed

Grancini, G; Roldán-Carmona, C; Zimmermann, I; Mosconi, E; Lee, X; Martineau, D; Narbey, S; Oswald, F; De Angelis, F; Graetzel, M; Nazeeruddin, Mohammad Khaja

2017-06-01

Despite the impressive photovoltaic performances with power conversion efficiency beyond 22%, perovskite solar cells are poorly stable under operation, failing by far the market requirements. Various technological approaches have been proposed to overcome the instability problem, which, while delivering appreciable incremental improvements, are still far from a market-proof solution. Here we show one-year stable perovskite devices by engineering an ultra-stable 2D/3D (HOOC(CH 2 ) 4 NH 3 ) 2 PbI 4 /CH 3 NH 3 PbI 3 perovskite junction. The 2D/3D forms an exceptional gradually-organized multi-dimensional interface that yields up to 12.9% efficiency in a carbon-based architecture, and 14.6% in standard mesoporous solar cells. To demonstrate the up-scale potential of our technology, we fabricate 10 × 10 cm 2 solar modules by a fully printable industrial-scale process, delivering 11.2% efficiency stable for >10,000 h with zero loss in performances measured under controlled standard conditions. This innovative stable and low-cost architecture will enable the timely commercialization of perovskite solar cells.

Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

PubMed

Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

2016-06-08

Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

Terra Flexible Blanket Solar Array Deployment, On-Orbit Performance and Future Applications

NASA Technical Reports Server (NTRS)

Kurland, Richard; Schurig, Hans; Rosenfeld, Mark; Herriage, Michael; Gaddy, Edward; Keys, Denney; Faust, Carl; Andiario, William; Kurtz, Michelle; Moyer, Eric;

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

NASA Astrophysics Data System (ADS)

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-01

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis.

PubMed

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-26

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s -1 , corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

NASA Technical Reports Server (NTRS)

Abdulaziz, Salman; Payson, J. S.; Li, Yang; Woodyard, James R.

1990-01-01

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

A simple theory of back surface field /BSF/ solar cells

NASA Technical Reports Server (NTRS)

Von Roos, O.

1978-01-01

A theory of an n-p-p/+/ junction is developed, entirely based on Shockley's depletion layer approximation. Under the further assumption of uniform doping the electrical characteristics of solar cells as a function of all relevant parameters (cell thickness, diffusion lengths, etc.) can quickly be ascertained with a minimum of computer time. Two effects contribute to the superior performance of a BSF cell (n-p-p/+/ junction) as compared to an ordinary solar cell (n-p junction). The sharing of the applied voltage among the two junctions (the n-p and the p-p/+/ junction) decreases the dark current and the reflection of minority carriers by the builtin electron field of the p-p/+/ junction increases the short-circuit current. The theory predicts an increase in the open-circuit voltage (Voc) with a decrease in cell thickness. Although the short-circuit current decreases at the same time, the efficiency of the cell is virtually unaltered in going from a thickness of 200 microns to a thickness of 50 microns. The importance of this fact for space missions where large power-to-weight ratios are required is obvious.

Enhanced blue responses in nanostructured Si solar cells by shallow doping

NASA Astrophysics Data System (ADS)

Cheon, Sieun; Jeong, Doo Seok; Park, Jong-Keuk; Kim, Won Mok; Lee, Taek Sung; Lee, Heon; Kim, Inho

2018-03-01

Optimally designed Si nanostructures are very effective for light trapping in crystalline silicon (c-Si) solar cells. However, when the lateral feature size of Si nanostructures is comparable to the junction depth of the emitter, dopant diffusion in the lateral direction leads to excessive doping in the nanostructured emitter whereby poor blue responses arise in the external quantum efficiency (EQE). The primary goal of this study is to find the correlation of emitter junction depth and carrier collection efficiency in nanostructured c-Si solar cells in order to enhance the blue responses. We prepared Si nanostructures of nanocone shape by colloidal lithography, with silica beads of 520 nm in diameter, followed by a reactive ion etching process. c-Si solar cells with a standard cell architecture of an Al back surface field were fabricated varying the emitter junction depth. We varied the emitter junction depth by adjusting the doping level from heavy doping to moderate doping to light doping and achieved greatly enhanced blue responses in EQE from 47%-92% at a wavelength of 400 nm. The junction depth analysis by secondary ion mass-spectroscopy profiling and the scanning electron microscopy measurements provided us with the design guide of the doping level depending on the nanostructure feature size for high efficiency nanostructured c-Si solar cells. Optical simulations showed us that Si nanostructures can serve as an optical resonator to amplify the incident light field, which needs to be considered in the design of nanostructured c-Si solar cells.

Advanced BCD technology with vertical DMOS based on a semi-insulation structure

NASA Astrophysics Data System (ADS)

Kui, Ma; Xinghua, Fu; Jiexin, Lin; Fashun, Yang

2016-07-01

A new semi-insulation structure in which one isolated island is connected to the substrate was proposed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical device without extra internal interconnection structure was presented. The manufacturing of the new semi-insulation structure employed multi-epitaxy and selectively multi-doping. Isolated islands are insulated with the substrate by reverse-biased PN junctions. Adjacent isolated islands are insulated by isolation wall or deep dielectric trenches. The proposed semi-insulation structure and devices fixed in it were simulated through two-dimensional numerical computer simulators. Based on the new BCD technology, a smart power integrated circuit was designed and fabricated. The simulated and tested results of Vertical DMOS, MOSFETs, BJTs, resistors and diodes indicated that the proposed semi-insulation structure is reasonable and the advanced BCD technology is validated. Project supported by the National Natural Science Foundation of China (No. 61464002), the Science and Technology Fund of Guizhou Province (No. Qian Ke He J Zi [2014]2066), and the Dr. Fund of Guizhou University (No. Gui Da Ren Ji He Zi (2013)20Hao).

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paquette, B.; DeVita, M.; Turala, A.

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Design and Optimization of Copper Indium Gallium Selenide Solar Cells for Lightweight Battlefield Application

DTIC Science & Technology

2014-06-01

spectrum. This results in most of the incident sunlight being absorbed close to the p-n hetero - junction formed with the CdS layer. This property is what... junction layer in the solar cell hetero - junction . A thin layer of CdS is used in CIGS cells to accomplish this. CdS has a band gap of 2.4 eV, which...field between the p-n hetero - junction at the cost of absorbing more of the usable photons from reaching the CIGS layer. From Figure 28, CdS reached peak

Pressure and PL study of dilute-N GaInNAs films for applications in photovoltaics

NASA Astrophysics Data System (ADS)

Lindberg, George; Fukuda, Miwa; Al Khalfioui, M.; Hossain, Khalid; Sellers, Ian; Weinstein, Bernard

2013-03-01

Multi-junction photovoltaic devices employing dilute-N GaInNAs alloys are currently of high interest for efficient solar energy conversion. The negative band-bowing produced by introducing a few percent N into GaInAs provides a convenient way to match the 1eV component of the solar spectrum, providing recombination losses in localized states can be reduced while maintaining favorable carrier extraction. High pressure photoluminescence (PL) experiments exploring the localization of band-edge excitons in dilute-N GaInNAs films grown by plasma assisted MBE will be discussed. The effects of post-growth annealing and hydrogen incorporation on the PL spectra of the films are considered. Research supported by Amethyst Research Inc. through the State of Oklahoma, ONAP program.

Molecular Monolayers for Electrical Passivation and Functionalization of Silicon-Based Solar Energy Devices.

PubMed

Veerbeek, Janneke; Firet, Nienke J; Vijselaar, Wouter; Elbersen, Rick; Gardeniers, Han; Huskens, Jurriaan

2017-01-11

Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based solar cells. Organic monolayers were coupled to silicon surfaces by hydrosilylation in order to avoid an insulating silicon oxide layer at the surface. Monolayers of 1-tetradecyne were shown to passivate silicon micropillar-based solar cells with radial junctions, by which the efficiency increased from 8.7% to 9.9% for n + /p junctions and from 7.8% to 8.8% for p + /n junctions. This electrical passivation of the surface, most likely by removal of dangling bonds, is reflected in a higher shunt resistance in the J-V measurements. Monolayers of 1,8-nonadiyne were still reactive for click chemistry with a model catalyst, thus enabling simultaneous passivation and future catalyst coupling.

High frequency sound propagation in a network of interconnecting streets

NASA Astrophysics Data System (ADS)

Hewett, D. P.

2012-12-01

We propose a new model for the propagation of acoustic energy from a time-harmonic point source through a network of interconnecting streets in the high frequency regime, in which the wavelength is small compared to typical macro-lengthscales such as street widths/lengths and building heights. Our model, which is based on geometrical acoustics (ray theory), represents the acoustic power flow from the source along any pathway through the network as the integral of a power density over the launch angle of a ray emanating from the source, and takes into account the key phenomena involved in the propagation, namely energy loss by wall absorption, energy redistribution at junctions, and, in 3D, energy loss to the atmosphere. The model predicts strongly anisotropic decay away from the source, with the power flow decaying exponentially in the number of junctions from the source, except along the axial directions of the network, where the decay is algebraic.

High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions.

PubMed

Wang, Liang-Xing; Zhou, Zhi-Quan; Zhang, Tian-Ning; Chen, Xin; Lu, Ming

2016-12-01

Fill factors (FFs) of ~0.87 have been obtained for crystalline Si (c-Si) solar cells based on Ag front contacts after rapid thermal annealing. The usual single PN junction model fails to explain the high FF result. A metal/oxide/semiconductor (MOS) junction at the emitter is found to be inversely connected to the PN one, and when its barrier height/e is close to the open-circuit voltage of the solar cell, very high FF is obtainable. In this work, although the open-circuit voltage (<580 mV) is not high here, the efficiency of c-Si solar cell still reaches the state-of-the-art value (>20 %) due to the high FF achieved.

Low Intensity Low Temperature (LILT) measurements and coefficients on new photovoltaic structures

NASA Technical Reports Server (NTRS)

Schelman, David A.; Jenkins, Philip P.; Brinker, David J.; Appelbaum, Joseph

1995-01-01

Past NASA missions to Mars, Jupiter, and the outer planets were powered by radioisotope thermal generators (RTG's). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaic (PV) and thermophotovoltaic (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV and TPV data base for planetary mission planners and cell designers, we have compiled low temperature low intensity (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate dI(sub SC)/dT, dV(sub OC)/dT, dFF/dT, and also as a function of intensity, an accurate prediction of cell performance under the AMO spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GainP/GaAs/Ge, InP, InGaAs/InP, InP/InGaAs/InP, and GainP. Temperatures range as low as -175 C and intensities range from 1 sun to .02 suns.

Low Intensity Low Temperature (LILT) Measurements and Coefficients on New Photovoltaic Structures

NASA Technical Reports Server (NTRS)

Scheiman, David A.; Jenkins, Phillip P.; Brinker, David J.; Appelbaum, Joseph

1995-01-01

Past NASA missions to Mars, Jupiter and the outer planets were powered by radioisotope thermal generators (RTGs). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaics (PV) and thermophotovoltaics (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV data base for planetary mission planners and cell designers, we have compiled low intensity low temperature (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate Short Circuit Current (I(sub sc)), Open Circuit Voltage (V(sub os)), and Fill Factor (FF) as a function of temperature and intensity, an accurate prediction of cell performance under the AM0 spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GaInP/GaAs/GaAs, InP, InGaAs/InP, InP/InGaAs/InP, and GaInP. Temperatures range down to as low as -180 C and intensities range from 1 sun down to 0.02 suns. The coefficients presented in this paper represent experimental results and are intended to provide the user with approximate numbers.

The Performance of Advanced III-V Solar Cells

NASA Technical Reports Server (NTRS)

Mueller, Robert L.; Gaddy, Edward; Day, John H. (Technical Monitor)

2002-01-01

Test results show triple junction solar cells with efficiencies as high as 27% at 28C and 136.7 mw/sq cm. Triple junction cells also achieve up to 27.5% at -120 C and 5 mw/sq cm, conditions applicable to missions to Jupiter. Some triple junction cells show practically no degradation as a result of Low Intensity Low Temperature (LILT) effects, while others show some; this degradation can be overcome with minor changes to the cell design.

Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency

DOE PAGES

Essig, Stephanie; Steiner, Myles A.; Allebe, Christophe; ...

2016-04-27

Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells.more » Furthermore, the effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.« less

Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essig, Stephanie; Steiner, Myles A.; Allebe, Christophe

Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells.more » Furthermore, the effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.« less

TCAD Analysis of Heating and Maximum Current Density in Carbon Nanofiber Interconnects

DTIC Science & Technology

2011-09-01

a metallic MWCNT interconnect. From [20]. ....20  Figure 11.  Simple equivalent circuit model of a metallic MWCNT interconnect. From [20...Carbon Nanotube MWCNT Multi-Walled Carbon Nanotube SCU Santa Clara University Si Silicon SiO2 Silicon Dioxide SiC Silicon Carbide Au Gold...proven, multi-walled carbon nanotube ( MWCNT ) [2]. He later discovered single-walled carbon nanotubes (SWCNT) in 1993 [13]. Since Iijima’s discovery

Final Technical Report for Automated Manufacturing of Innovative CPV/PV Modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okawa, David

Cogenra’s Dense Cell Interconnect system was designed to use traditional front-contact cells and string them together into high efficiency and high reliability “supercells”. This novel stringer allows one to take advantage of the ~100 GW/year of existing cell production capacity and create a solar product for the customer that will produce more power and last longer than traditional PV products. The goal for this program was for Cogenra Solar to design and develop a first-of-kind automated solar manufacturing line that produces strings of overlapping cells or “supercells” based on Cogenra’s Dense Cell Interconnect (DCI) technology for their Low Concentration Photovoltaicmore » (LCPV) systems. This will enable the commercialization of DCI technology to improve the efficiency, reliability and economics for their Low Concentration Photovoltaic systems. In this program, Cogenra Solar very successfully designed, developed, built, installed, and started up the ground-breaking manufacturing tools required to assemble supercells. Cogenra then successfully demonstrated operation of the integrated line at high yield and throughput far exceeding expectations. The development of a supercell production line represents a critical step toward a high volume and low cost Low Concentration Photovoltaic Module with Dense Cell Interconnect technology and has enabled the evaluation of the technology for reliability and yield. Unfortunately, performance and cost headwinds on Low Concentration Photovoltaics systems including lack of diffuse capture (10-15% hit) and more expensive tracker requirements resulted in a move away from LCPV technology. Fortunately, the versatility of Dense Cell Interconnect technology allows for application to flat plate module technology as well and Cogenra has worked with the DOE to utilize the learning from this grant to commercialize DCI technology for the solar market through the on-going grant: Catalyzing PV Manufacturing in the US With Cogenra Solar’s Next-Generation Dense Cell Interconnect PV Module Manufacturing Technology. This program is now very successfully building off of this work and commercializing the technology to enable increased solar adoption.« less

Results from an International Measurement Round Robin of III-V Triple Junction Solar Cells under Air Mass Zero

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Scheiman, Chris; Goodbody, Chris; Baur, Carsten; Sharps, Paul; Imaizumi, Mitsuru; Yoo, Henry; Sahlstrom, Ted; Walters, Robert; Lorentzen, Justin;

Plasmon Enhanced Hetero-Junction Solar Cell

NASA Astrophysics Data System (ADS)

Long, Gen; Ching, Levine; Sadoqi, Mostafa; Xu, Huizhong

2015-03-01

Here we report a systematic study of plasmon-enhanced hetero-junction solar cells made of colloidal quantum dots (PbS) and nanowires (ZnO), with/without metal nanoparticles (Au). The structure of solar cell devices was characterized by AFM, SEM and profilometer, etc. The power conversion efficiencies of solar cell devices were characterized by solar simulator (OAI TriSOL, AM1.5G Class AAA). The enhancement in the photocurrent due to introduction of metal nanoparticles was obvious. We believe this is due to the plasmonic effect from the metal nanoparticles. The correlation between surface roughness, film uniformity and device performance was also studied.

Highly Efficient Perovskite Solar Modules by Scalable Fabrication and Interconnection Optimization

DOE PAGES

Yang, Mengjin; Kim, Dong Hoe; Klein, Talysa R.; ...

2018-01-02

To push perovskite solar cell (PSC) technology toward practical applications, large-area perovskite solar modules with multiple subcells need to be developed by fully scalable deposition approaches. Here, we demonstrate a deposition scheme for perovskite module fabrication with spray coating of a TiO2 electron transport layer (ETL) and blade coating of both a perovskite absorber layer and a spiro-OMeTAD-based hole transport layer (HTL). The TiO2 ETL remaining in the interconnection between subcells significantly affects the module performance. Reducing the TiO2 thickness changes the interconnection contact from a Schottky diode to ohmic behavior. Owing to interconnection resistance reduction, the perovskite modules withmore » a 10 nm TiO2 layer show enhanced performance mainly associated with an improved fill factor. Finally, we demonstrate a four-cell MA0.7FA0.3PbI3 perovskite module with a stabilized power conversion efficiency (PCE) of 15.6% measured from an aperture area of ~10.36 cm2, corresponding to an active-area module PCE of 17.9% with a geometric fill factor of ~87.3%.« less

Highly Efficient Perovskite Solar Modules by Scalable Fabrication and Interconnection Optimization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Mengjin; Kim, Dong Hoe; Klein, Talysa R.

To push perovskite solar cell (PSC) technology toward practical applications, large-area perovskite solar modules with multiple subcells need to be developed by fully scalable deposition approaches. Here, we demonstrate a deposition scheme for perovskite module fabrication with spray coating of a TiO2 electron transport layer (ETL) and blade coating of both a perovskite absorber layer and a spiro-OMeTAD-based hole transport layer (HTL). The TiO2 ETL remaining in the interconnection between subcells significantly affects the module performance. Reducing the TiO2 thickness changes the interconnection contact from a Schottky diode to ohmic behavior. Owing to interconnection resistance reduction, the perovskite modules withmore » a 10 nm TiO2 layer show enhanced performance mainly associated with an improved fill factor. Finally, we demonstrate a four-cell MA0.7FA0.3PbI3 perovskite module with a stabilized power conversion efficiency (PCE) of 15.6% measured from an aperture area of ~10.36 cm2, corresponding to an active-area module PCE of 17.9% with a geometric fill factor of ~87.3%.« less

Pathway to 50% efficient inverted metamorphic concentrator solar cells

NASA Astrophysics Data System (ADS)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; Perl, Emmett E.; Horowitz, Kelsey A. W.; Friedman, Daniel J.

2017-09-01

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F; Steiner, Myles A; Jain, Nikhil

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAsmore » to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.« less

Three dimensional, multi-chip module

DOEpatents

Bernhardt, A.F.; Petersen, R.W.

1993-08-31

A plurality of multi-chip modules are stacked and bonded around the perimeter by sold-bump bonds to adjacent modules on, for instance, three sides of the perimeter. The fourth side can be used for coolant distribution, for more interconnect structures, or other features, depending on particular design considerations of the chip set. The multi-chip modules comprise a circuit board, having a planarized interconnect structure formed on a first major surface, and integrated circuit chips bonded to the planarized interconnect surface. Around the periphery of each circuit board, long, narrow dummy chips'' are bonded to the finished circuit board to form a perimeter wall. The wall is higher than any of the chips on the circuit board, so that the flat back surface of the board above will only touch the perimeter wall. Module-to-module interconnect is laser-patterned on the sides of the boards and over the perimeter wall in the same way and at the same time that chip to board interconnect may be laser-patterned.

Three dimensional, multi-chip module

DOEpatents

Bernhardt, Anthony F.; Petersen, Robert W.

1993-01-01

A plurality of multi-chip modules are stacked and bonded around the perimeter by sold-bump bonds to adjacent modules on, for instance, three sides of the perimeter. The fourth side can be used for coolant distribution, for more interconnect structures, or other features, depending on particular design considerations of the chip set. The multi-chip modules comprise a circuit board, having a planarized interconnect structure formed on a first major surface, and integrated circuit chips bonded to the planarized interconnect surface. Around the periphery of each circuit board, long, narrow "dummy chips" are bonded to the finished circuit board to form a perimeter wall. The wall is higher than any of the chips on the circuit board, so that the flat back surface of the board above will only touch the perimeter wall. Module-to-module interconnect is laser-patterned o the sides of the boards and over the perimeter wall in the same way and at the same time that chip to board interconnect may be laser-patterned.

Quantum junction solar cells.

PubMed

Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H

2012-09-12

Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO(2)); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics.

Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

2015-01-01

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype ICs with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3-and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient.

Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling

NASA Technical Reports Server (NTRS)

Keeney, R.; Sundaram, L. M. G.; Rode, H.; Bhat, I.; Ghandhi, S. K.; Borrego, J. M.

1984-01-01

The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.

Maximizing tandem solar cell power extraction using a three-terminal design

DOE PAGES

Warren, Emily L.; Deceglie, Michael G.; Rienacker, Michael; ...

2018-04-09

Three-terminal tandem solar cells can provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects.

Maximizing tandem solar cell power extraction using a three-terminal design

DOE PAGES

Warren, Emily L.; Deceglie, Michael G.; Rienäcker, Michael; ...

2018-01-01

Three-terminal tandem solar cells can provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects.

Stakeholder Convening and Working Groups | Solar Research | NREL

Science.gov Websites

. Distributed Generation Interconnection Collaborative Established in 2013 by NREL, the Distributed Generation Interconnection Collaborative (DGIC) provides a forum for the exchange of best practices for distributed

Structure for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

2009-01-01

A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

78 FR 28841 - Quartzsite Solar Energy Project Record of Decision (DOE/EIS-0440)

Federal Register 2010, 2011, 2012, 2013, 2014

2013-05-16

... proposed Project would contain the central receiver or tower, a solar field consisting of mirrors or... DEPARTMENT OF ENERGY Western Area Power Administration Quartzsite Solar Energy Project Record of...), received a request from Quartzsite Solar Energy, LLC (QSE) to interconnect its proposed Quartzsite Solar...

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L.; Deceglie, Michael G.; Rienäcker, Michael

Three-terminal tandem solar cells can provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects.

High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells

NASA Astrophysics Data System (ADS)

Jain, Nikhil; Schulte, Kevin L.; Geisz, John F.; Friedman, Daniel J.; France, Ryan M.; Perl, Emmett E.; Norman, Andrew G.; Guthrey, Harvey L.; Steiner, Myles A.

2018-01-01

Photovoltaic conversion efficiencies of 32.6 ± 1.4% under the AM1.5 G173 global spectrum, and 35.5% ± 1.2% at 38-suns concentration under the direct spectrum, are demonstrated for a monolithic, dual-junction 1.7/1.1 eV solar cell. The tandem cell consists of a 1.7 eV GaInAsP top-junction grown lattice-matched to a GaAs substrate, followed by a metamorphic 1.1 eV GaInAs junction grown on a transparent, compositionally graded metamorphic AlGaInAs buffer. This bandgap combination is much closer to the dual-junction optimum and offers headroom for absolute 3% improvement in efficiency, in comparison to the incumbent lattice-matched GaInP/GaAs (˜1.86/1.41 eV) solar cells. The challenge of growing a high-quality 1.7 eV GaInAsP solar cell is the propensity for phase separation in the GaInAsP alloy. The challenge of lattice-mismatched GaInAs solar cell growth is that it requires minimizing the residual dislocation density during the growth of a transparent compositionally graded buffer to enable efficient metamorphic tandem cell integration. Transmission electron microscopy reveals relatively weak composition fluctuation present in the 1.7 eV GaInAsP alloy, attained through growth control. The threading dislocation density of the GaInAs junction is ˜1 × 106 cm-2, as determined from cathodoluminescence measurements, highlighting the quality of the graded buffer. These material advances have enabled the performance of both junctions to reach over 80% of their Shockley-Queisser limiting efficiencies, with both the subcells demonstrating a bandgap-voltage offset, WOC (=Eg/q-VOC), of ˜0.39 V.

High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells

DOE PAGES

Jain, Nikhil; Schulte, Kevin L.; Geisz, John F.; ...

2018-01-29

Photovoltaic conversion efficiencies of 32.6 +/- 1.4% under the AM1.5 G173 global spectrum, and 35.5 +/- 1.2% at 38-suns concentration under the direct spectrum, are demonstrated for a monolithic, dual-junction 1.7/1.1 eV solar cell. The tandem cell consists of a 1.7 eV GaInAsP top-junction grown lattice-matched to a GaAs substrate, followed by a metamorphic 1.1 eV GaInAs junction grown on a transparent, compositionally graded metamorphic AlGaInAs buffer. This bandgap combination is much closer to the dual-junction optimum and offers headroom for absolute 3% improvement in efficiency, in comparison to the incumbent lattice-matched GaInP/GaAs (~1.86/1.41 eV) solar cells. The challenge ofmore » growing a high-quality 1.7 eV GaInAsP solar cell is the propensity for phase separation in the GaInAsP alloy. The challenge of lattice-mismatched GaInAs solar cell growth is that it requires minimizing the residual dislocation density during the growth of a transparent compositionally graded buffer to enable efficient metamorphic tandem cell integration. Transmission electron microscopy reveals relatively weak composition fluctuation present in the 1.7 eV GaInAsP alloy, attained through growth control. The threading dislocation density of the GaInAs junction is ~1 x 10^6 cm-2, as determined from cathodoluminescence measurements, highlighting the quality of the graded buffer. These material advances have enabled the performance of both junctions to reach over 80% of their Shockley-Queisser limiting efficiencies, with both the subcells demonstrating a bandgap-voltage offset, WOC (=Eg/q-VOC), of ~0.39 V.« less

High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Nikhil; Schulte, Kevin L.; Geisz, John F.

Photovoltaic conversion efficiencies of 32.6 +/- 1.4% under the AM1.5 G173 global spectrum, and 35.5 +/- 1.2% at 38-suns concentration under the direct spectrum, are demonstrated for a monolithic, dual-junction 1.7/1.1 eV solar cell. The tandem cell consists of a 1.7 eV GaInAsP top-junction grown lattice-matched to a GaAs substrate, followed by a metamorphic 1.1 eV GaInAs junction grown on a transparent, compositionally graded metamorphic AlGaInAs buffer. This bandgap combination is much closer to the dual-junction optimum and offers headroom for absolute 3% improvement in efficiency, in comparison to the incumbent lattice-matched GaInP/GaAs (~1.86/1.41 eV) solar cells. The challenge ofmore » growing a high-quality 1.7 eV GaInAsP solar cell is the propensity for phase separation in the GaInAsP alloy. The challenge of lattice-mismatched GaInAs solar cell growth is that it requires minimizing the residual dislocation density during the growth of a transparent compositionally graded buffer to enable efficient metamorphic tandem cell integration. Transmission electron microscopy reveals relatively weak composition fluctuation present in the 1.7 eV GaInAsP alloy, attained through growth control. The threading dislocation density of the GaInAs junction is ~1 x 10^6 cm-2, as determined from cathodoluminescence measurements, highlighting the quality of the graded buffer. These material advances have enabled the performance of both junctions to reach over 80% of their Shockley-Queisser limiting efficiencies, with both the subcells demonstrating a bandgap-voltage offset, WOC (=Eg/q-VOC), of ~0.39 V.« less

Integrated Phase Array Antenna/Solar Cell System for Flexible Access Communication (IA/SAC)

NASA Technical Reports Server (NTRS)

Clark, E. B.; Lee, R. Q.; Pal, A. T.; Wilt, D. M.; McElroy, B. D.; Mueller, C. H.

2005-01-01

This paper describes recent efforts to integrate advanced solar cells with printed planar antennas. Several previous attempts have been reported in the literature, but this effort is unique in several ways. It uses Gallium Arsenide (GaAs) multi-junction solar cell technology. The solar cells and antennas will be integrated onto a common GaAs substrate. When fully implemented, IA/SAC will be capable of dynamic beam steering. In addition, this program targets the X-band (8 - 12 GHz) and higher frequencies, as compared to the 2.2 - 2.9 GHz arrays targeted by other organizations. These higher operating frequencies enable a greater bandwidth and thus higher data transfer rates. The first phase of the effort involves the development of 2 x 2 cm GaAs Monolithically Integrated Modules (MIM) with integrated patch antennas on the opposite side of the substrate. Subsequent work will involve the design and development of devices having the GaAs MIMs and the antennas on the same side of the substrate. Results from the phase one efforts will be presented.

Performance analysis of nanodisk and core/shell/shell-nanowire type III-Nitride heterojunction solar cell for efficient energy harvesting

NASA Astrophysics Data System (ADS)

Routray, S. R.; Lenka, T. R.

2017-11-01

Now-a-days III-Nitride nanowires with axial (nanodisk) and radial (core/shell/shell-nanowire) junctions are two unique and potential methods for solar energy harvesting adopted by worldwide researchers. In this paper, polarization behavior of GaN/InGaN/GaN junction and its effect on carrier dynamics of nanodisk and CSS-nanowire type solar cells are intensively studied and compared with its planar counterpart by numerical simulations using commercially available Victory TCAD. It is observed that CSS-NW with hexagonal geometrical shapes are robust to detrimental impact of polarization charges and could be good enough to accelerate carrier collection efficiency as compared to nanodisk and planar solar cells. This numerical study provides an innovative aspect of fundamental device physics with respect to polarization charges in CSS-NW and nanodisk type junction towards photovoltaic applications. The internal quantum efficiencies (IQE) are also discussed to evaluate carrier collection mechanisms and recombination losses in each type of junctions of solar cell. Finally, it is interesting to observe a maximum conversion efficiency of 6.46% with 91.6% fill factor from n-GaN/i-In0.1Ga0.9N/p-GaN CSS-nanowire solar cell with an optimized thickness of 180 nm InGaN layer under one Sun AM1.5 illumination.

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

Cylindrically symmetric Fresnel lens for high concentration photovoltaic

NASA Astrophysics Data System (ADS)

Hung, Yu-Ting; Su, Guo-Dung

2009-08-01

High concentration photovoltaic (HCPV) utilizes point-focus cost-effective plastic Fresnel lens. And a millimeter-sized Ill-V compound multi-junction solar cell is placed underneath focusing optics which can achieve cell efficiency potential of up to 40.7 %. The advantage of HCPV makes less solar cell area and higher efficiency; however, the acceptance angle of HCPV is about +/-1°, which is very small and the mechanical tracking of the sun is necessary. In order to reduce the power consumption and the angle tracking error of tracking systems, a light collector model with larger acceptance angle is designed with ZEMAX®. In this model, the original radially symmetric Fresnel lens of HCPV is replaced by cylindrically symmetric Fresnel lens and a parabolic reflective surface. Light is collected in two dimensions separately. And a couple of lenses and a light pipe are added before the solar cell chip in order to collect more light when sun light deviates from incident angle of 00. An acceptance angle of +/-10° is achieved with GCR 400.

Fuzzy Edge Connectivity of Graphical Fuzzy State Space Model in Multi-connected System

NASA Astrophysics Data System (ADS)

Harish, Noor Ainy; Ismail, Razidah; Ahmad, Tahir

2010-11-01

Structured networks of interacting components illustrate complex structure in a direct or intuitive way. Graph theory provides a mathematical modeling for studying interconnection among elements in natural and man-made systems. On the other hand, directed graph is useful to define and interpret the interconnection structure underlying the dynamics of the interacting subsystem. Fuzzy theory provides important tools in dealing various aspects of complexity, imprecision and fuzziness of the network structure of a multi-connected system. Initial development for systems of Fuzzy State Space Model (FSSM) and a fuzzy algorithm approach were introduced with the purpose of solving the inverse problems in multivariable system. In this paper, fuzzy algorithm is adapted in order to determine the fuzzy edge connectivity between subsystems, in particular interconnected system of Graphical Representation of FSSM. This new approach will simplify the schematic diagram of interconnection of subsystems in a multi-connected system.

Summary of mathematical models for a conventional and vertical junction photoconverter

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.

1986-01-01

The geometry and computer programming for mathematical models of a one-dimensional conventional photoconverter, a one-dimensional vertical junction photoconverter, a three-dimensional conventinal photoconverter, and a three-dimensional vertical junction solar cell are discussed.

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; ...

2017-12-20

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Current matching using CdSe quantum dots to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells.

PubMed

Lee, Ya-Ju; Yao, Yung-Chi; Tsai, Meng-Tsan; Liu, An-Fan; Yang, Min-De; Lai, Jiun-Tsuen

2013-11-04

A III-V multi-junction tandem solar cell is the most efficient photovoltaic structure that offers an extremely high power conversion efficiency. Current mismatching between each subcell of the device, however, is a significant challenge that causes the experimental value of the power conversion efficiency to deviate from the theoretical value. In this work, we explore a promising strategy using CdSe quantum dots (QDs) to enhance the photocurrent of the limited subcell to match with those of the other subcells and to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells. The underlying mechanism of the enhancement can be attributed to the QD's unique capacity for photon conversion that tailors the incident spectrum of solar light; the enhanced efficiency of the device is therefore strongly dependent on the QD's dimensions. As a result, by appropriately selecting and spreading 7 mg/mL of CdSe QDs with diameters of 4.2 nm upon the InGaP/GaAs/Ge solar cell, the power conversion efficiency shows an enhancement of 10.39% compared to the cell's counterpart without integrating CdSe QDs.

Impact of spectral irradiance distribution and temperature on the outdoor performance of concentrator photovoltaic system

NASA Astrophysics Data System (ADS)

Husna, Husyira Al; Shibata, Naoki; Sawano, Naoki; Ueno, Seiya; Ota, Yasuyuki; Minemoto, Takashi; Araki, Kenji; Nishioka, Kensuke

2013-09-01

Multi-junction solar cell is designed to have considerable effect towards the solar spectrum distribution so that the maximum solar radiation could be absorbed hence, enhancing the energy conversion efficiency of the cell. Due to its application in CPV system, the system's characteristics are more sensitive to environmental factor in comparison to flat-plate PV system which commonly equipped with Si-based solar cell. In this paper, the impact of environmental factors i.e. average photon energy (APE) and temperature of solar cell (Tcell) towards the performance of the tracking type CPV system were discussed. A year data period of direct spectral irradiance, cell temperature, and power output which recorded from November 2010 to October 2011 at a CPV system power generator plant located at Miyazaki, Japan was used in this study. The result showed that most frequent condition during operation was at APE = 1.87±0.005eV, Tcell = 65±2.5°C with performance ratio of 83.9%. Furthermore, an equivalent circuit simulation of a CPV subsystem in module unit was conducted in order to investigate the influence of environmental factors towards the performance of the module.

Systems Integration Fact Sheet

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2016-06-01

This fact sheet is an overview of the Systems Integration subprogram at the U.S. Department of Energy SunShot Initiative. The Systems Integration subprogram enables the widespread deployment of safe, reliable, and cost-effective solar energy technologies by addressing the associated technical and non-technical challenges. These include timely and cost-effective interconnection procedures, optimal system planning, accurate prediction of solar resources, monitoring and control of solar power, maintaining grid reliability and stability, and many more. To address the challenges associated with interconnecting and integrating hundreds of gigawatts of solar power onto the electricity grid, the Systems Integration program funds research, development, and demonstrationmore » projects in four broad, interrelated focus areas: grid performance and reliability, dispatchability, power electronics, and communications.« less

The 200 watts/kilogram solar array conceptual approach study. Phase 2: Assessment report for proof-of-concept experiments and Halley's comet concentrator array

NASA Technical Reports Server (NTRS)

1977-01-01

The activities associated with the fabrication, handling, and testing of 2-mil solar cell modules on a flexible substrate are demonstrated. It is shown that 2-mil solar cells can be reliably handled, welded, and bonded to a Kapton substrate. Flexible Invar interconnects can be used to interconnect individual cells to form modules. These solar cell modules can be temperature cycled, wrapped around a 10-inch diameter drum, and vibrated to the shuttle environment with no significant damage. A bonding technique was developed to physically join adjacent modules that is stronger than the Kapton, itself. Ultraviolet radiation tests were performed on RTV - silicone as a cell cover material - with very encouraging results.

Development of large-area monolithically integrated silicon-film photovoltaic modules

NASA Astrophysics Data System (ADS)

Rand, J. A.; Cotter, J. E.; Ingram, A. E.; Ruffins, T. R.; Shreve, K. P.; Hall, R. B.; Barnett, A. M.

1993-06-01

This report describes work to develop Silicon-Film (trademark) Product 3 into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product 3 structure is a thin (less than 100 micron) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200 sq cm, 18%-efficient, monolithic array. The short-term objectives are to improve material quality and to fabricate 100 sq cm monolithically interconnected solar cell arrays. Low minority-carrier diffusion length in the silicon film and series resistance in the interconnected device structure are presently limiting device performance. Material quality is continually improving through reduced impurity contamination. Metallization schemes, such as a solder-dipped interconnection process, have been developed that will allow low-cost production processing and minimize R(sub s) effects. Test data for a nine-cell device (16 sq cm) indicated a V(sub oc) of 3.72 V. These first-reported monolithically interconnected multicrystalline silicon-on-ceramic devices show low shunt conductance (less than 0.1 mA/sq cm) due to limited conduction through the ceramic and no process-related metallization shunts.

Terra Flexible Blanket Solar Array Deployment, On-Orbit Performance and Future Applications

NASA Technical Reports Server (NTRS)

Kurland, Richard; Schurig, Hans; Rosenfeld, Mark; Herriage, Michael; Gaddy, Edward; Keys, Denney; Faust, Carl; Andiario, William; Kurtz, Michelle; Moyer, Eric;

Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby

DOEpatents

Gonzalez, Franklin N.; Neugroschel, Arnost

1984-02-14

A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.

Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

2015-01-01

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype IC's with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3- and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient. Improved reproducibility remains to be accomplished.

InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hashem, Islam E.; Zachary Carlin, C.; Hagar, Brandon G.

2016-03-07

Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on In{sub x}Ga{sub 1−x}As{sub 1−z}P{sub z}/In{sub y}Ga{sub 1−y}P (x > y) and In{sub x}Ga{sub 1−x}P/In{sub y}Ga{sub 1−y}P (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of In{sub x}Ga{sub 1−x}As{sub 1−z}P{sub z}/In{sub y}Ga{sub 1−y}P can be tuned from 1.82 to 1.65 eV by adjustingmore » the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantum efficiency). The effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWs is discussed and analyzed.« less

Development and fabrication of a solar cell junction processing system

NASA Technical Reports Server (NTRS)

Bunker, S.

1981-01-01

A solar cell junction processing system was developed and fabricated. A pulsed electron beam for the four inch wafers is being assembled and tested, wafers were successfully pulsed, and solar cells fabricated. Assembly of the transport locks is completed. The transport was operated successfully but not with sufficient reproducibility. An experiment test facility to examine potential scaleup problems associated with the proposed ion implanter design was constructed and operated. Cells were implanted and found to have efficiency identical to the normal Spire implant process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scientists set a new world record for converting non-concentrated sunlight into electricity using a dual-junction III-V/Si solar cell. National Renewable Energy Laboratory (NREL) and Swiss Center for Electronics and Microtechnology (CSEM) scientists have collaborated to create a novel tandem solar cell that operates at 29.8% conversion efficiency under non-concentrator (1-sun) conditions. In comparison, the 1-sun efficiency of a silicon (Si) single-junction solar cell is probably still a few years away from converging on its practical limit of about 26%.

Automated solar cell assembly team process research

NASA Astrophysics Data System (ADS)

Nowlan, M. J.; Hogan, S. J.; Darkazalli, G.; Breen, W. F.; Murach, J. M.; Sutherland, S. F.; Patterson, J. S.

1994-06-01

This report describes work done under the Photovoltaic Manufacturing Technology (PVMaT) project, Phase 3A, which addresses problems that are generic to the photovoltaic (PV) industry. Spire's objective during Phase 3A was to use its light soldering technology and experience to design and fabricate solar cell tabbing and interconnecting equipment to develop new, high-yield, high-throughput, fully automated processes for tabbing and interconnecting thin cells. Areas that were addressed include processing rates, process control, yield, throughput, material utilization efficiency, and increased use of automation. Spire teamed with Solec International, a PV module manufacturer, and the University of Massachusetts at Lowell's Center for Productivity Enhancement (CPE), automation specialists, who are lower-tier subcontractors. A number of other PV manufacturers, including Siemens Solar, Mobil Solar, Solar Web, and Texas instruments, agreed to evaluate the processes developed under this program.

Thermal cycle testing of Space Station Freedom solar array blanket coupons

NASA Technical Reports Server (NTRS)

Scheiman, David A.; Schieman, David A.

1991-01-01

Lewis Research Center is presently conducting thermal cycle testing of solar array blanket coupons that represent the baseline design for Space Station Freedom. Four coupons were fabricated as part of the Photovoltaic Array Environment Protection (PAEP) Program, NAS 3-25079, at Lockheed Missile and Space Company. The objective of the testing is to demonstrate the durability or operational lifetime of the solar array welded interconnect design within the durability or operational lifetime of the solar array welded interconnect design within a low earth orbit (LEO) thermal cycling environment. Secondary objectives include the observation and identification of potential failure modes and effects that may occur within the solar array blanket coupons as a result of thermal cycling. The objectives, test articles, test chamber, performance evaluation, test requirements, and test results are presented for the successful completion of 60,000 thermal cycles.

Design of a multi-channel free space optical interconnection component

NASA Astrophysics Data System (ADS)

Jia, Da-Gong; Zhang, Pei-Song; Jing, Wen-Cai; Tan, Jun; Zhang, Hong-Xia; Zhang, Yi-Mo

2008-11-01

A multi-channel free space optical interconnection component, fiber optic rotary joint, was designed using a Dove prism. When the Dove prism is rotated an angle of α around the longitudinal axis, the image rotates an angle of 2 α. The optical interconnection component consists of the signal transmission system, Dove prim and driving mechanism. The planetary gears are used to achieve the speed ratio of 2:1 between the total optical interconnection component and the Dove prism. The C-lenses are employed to couple different optical signals in the signal transmission system. The coupling loss between the receiving fiber of stationary part and the transmitting fiber of rotary part is measured.

High temperature - low mass solar blanket

NASA Technical Reports Server (NTRS)

Mesch, H. G.

1979-01-01

Interconnect materials and designs for use with ultrathin silicon solar cells are discussed, as well as the results of an investigation of the applicability of parallel-gap resistance welding for interconnecting these cells. Data relating contact pull strength and cell electrical degradation to variations in welding parameters such as time, voltage and pressure are presented. Methods for bonding ultrathin cells to flexible substances and for bonding thin (75 micrometers) covers to these cells are described. Also, factors influencing fabrication yield and approaches for increasing yield are discussed. The results of vacuum thermal cycling and thermal soak tests on prototype ultrathin cell test coupons and one solar module blanket are presented.

Alaska | Midmarket Solar Policies in the United States | Solar Research |

Science.gov Websites

developers may offer community solar programs. State Incentive Programs Program Administrator Incentive decisions. Utility Incentive Programs Check with local utilities for midscale solar incentives. Resources and utility policies and incentive programs. Net Metering and Interconnection Regulatory Commission of

Photovoltaic solar cell

DOEpatents

Nielson, Gregory N; Cruz-Campa, Jose Luis; Okandan, Murat; Resnick, Paul J

2014-05-20

A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electricity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

Photovoltaic solar cell

DOEpatents

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

2013-11-26

A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

Lightweight solar array blanket tooling, laser welding and cover process technology

NASA Technical Reports Server (NTRS)

Dillard, P. A.

1983-01-01

A two phase technology investigation was performed to demonstrate effective methods for integrating 50 micrometer thin solar cells into ultralightweight module designs. During the first phase, innovative tooling was developed which allows lightweight blankets to be fabricated in a manufacturing environment with acceptable yields. During the second phase, the tooling was improved and the feasibility of laser processing of lightweight arrays was confirmed. The development of the cell/interconnect registration tool and interconnect bonding by laser welding is described.

Diffusion length measurements of thin GaAs solar cells by means of energetic electrons

NASA Technical Reports Server (NTRS)

Vonross, O.

1980-01-01

A calculation of the short circuit current density (j sub sc) of a thin GaAs solar cell induced by fast electrons is presented. It is shown that in spite of the disparity in thickness between the N-type portion of the junction and the P-type portion of the junction, the measurement of the bulk diffusion length L sub p of the N-type part of the junction is seriously hampered due to the presence of a sizable contribution to the j sub sc from the P-type region of the junction. Corrections of up to 50% had to be made in order to interpret the data correctly. Since these corrections were not amenable to direct measurements it is concluded that the electron beam method for the determination of the bulk minority carrier diffusion length, which works so well for Si solar cells, is a poor method when applied to thin GaAs cells.

Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Garcia, Ivan; ...

2015-10-02

The emission of light from each junction in a series-connected multijunction solar cell, we found, both complicates and elucidates the understanding of its performance under arbitrary conditions. Bringing together many recent advances in this understanding, we present a general 1-D model to describe luminescent coupling that arises from both voltage-driven electroluminescence and voltage-independent photoluminescence in nonideal junctions that include effects such as Sah-Noyce-Shockley (SNS) recombination with n ≠ 2, Auger recombination, shunt resistance, reverse-bias breakdown, series resistance, and significant dark area losses. The individual junction voltages and currents are experimentally determined from measured optical and electrical inputs and outputs ofmore » the device within the context of the model to fit parameters that describe the devices performance under arbitrary input conditions. Furthermore, our techniques to experimentally fit the model are demonstrated for a four-junction inverted metamorphic solar cell, and the predictions of the model are compared with concentrator flash measurements.« less

Inversion layer solar cell fabrication and evaluation. [measurement of response of inversion layer solar cell to light of different wavelengths

NASA Technical Reports Server (NTRS)

Call, R. L.

1973-01-01

Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. This charged layer was supplied through three mechanisms: (1) applying a positive potential to a transparent electrode separated from the silicon surface by a dielectric, (2) contaminating the oxide layer with positive ions, and (3) forming donor surface states that leave a positive charge on the surface. A movable semi-infinite shadow delineated the extent of sensitivity of the cell due to the inversion region. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

NREL's III-V Team Demonstrates Record Efficiency Dual-Junction Solar Cell |

Science.gov Websites

-junction solar cell, surpassing the previous mark by a full percentage. Under one sun of illumination, the . Department of Energy's National Renewable Energy Laboratory (NREL) have set a record efficiency for a dual lattice-mismatched, 1.1-eV GaInAs bottom cell, grown monolithically by atmospheric pressure metal-organic

Research on gallium arsenide diffused junction solar cells

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Ghandi, S. K.

1984-01-01

The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.

Reliability models applicable to space telescope solar array assembly system

NASA Technical Reports Server (NTRS)

Patil, S. A.

1986-01-01

A complex system may consist of a number of subsystems with several components in series, parallel, or combination of both series and parallel. In order to predict how well the system will perform, it is necessary to know the reliabilities of the subsystems and the reliability of the whole system. The objective of the present study is to develop mathematical models of the reliability which are applicable to complex systems. The models are determined by assuming k failures out of n components in a subsystem. By taking k = 1 and k = n, these models reduce to parallel and series models; hence, the models can be specialized to parallel, series combination systems. The models are developed by assuming the failure rates of the components as functions of time and as such, can be applied to processes with or without aging effects. The reliability models are further specialized to Space Telescope Solar Arrray (STSA) System. The STSA consists of 20 identical solar panel assemblies (SPA's). The reliabilities of the SPA's are determined by the reliabilities of solar cell strings, interconnects, and diodes. The estimates of the reliability of the system for one to five years are calculated by using the reliability estimates of solar cells and interconnects given n ESA documents. Aging effects in relation to breaks in interconnects are discussed.

Cut-loading: a useful tool for examining the extent of gap junction tracer coupling between retinal neurons.

PubMed

Choi, Hee Joo; Ribelayga, Christophe P; Mangel, Stuart C

2012-01-12

In addition to chemical synaptic transmission, neurons that are connected by gap junctions can also communicate rapidly via electrical synaptic transmission. Increasing evidence indicates that gap junctions not only permit electrical current flow and synchronous activity between interconnected or coupled cells, but that the strength or effectiveness of electrical communication between coupled cells can be modulated to a great extent(1,2). In addition, the large internal diameter (~1.2 nm) of many gap junction channels permits not only electric current flow, but also the diffusion of intracellular signaling molecules and small metabolites between interconnected cells, so that gap junctions may also mediate metabolic and chemical communication. The strength of gap junctional communication between neurons and its modulation by neurotransmitters and other factors can be studied by simultaneously electrically recording from coupled cells and by determining the extent of diffusion of tracer molecules, which are gap junction permeable, but not membrane permeable, following iontophoretic injection into single cells. However, these procedures can be extremely difficult to perform on neurons with small somata in intact neural tissue. Numerous studies on electrical synapses and the modulation of electrical communication have been conducted in the vertebrate retina, since each of the five retinal neuron types is electrically connected by gap junctions(3,4). Increasing evidence has shown that the circadian (24-hour) clock in the retina and changes in light stimulation regulate gap junction coupling(3-8). For example, recent work has demonstrated that the retinal circadian clock decreases gap junction coupling between rod and cone photoreceptor cells during the day by increasing dopamine D2 receptor activation, and dramatically increases rod-cone coupling at night by reducing D2 receptor activation(7,8). However, not only are these studies extremely difficult to perform on neurons with small somata in intact neural retinal tissue, but it can be difficult to adequately control the illumination conditions during the electrophysiological study of single retinal neurons to avoid light-induced changes in gap junction conductance. Here, we present a straightforward method of determining the extent of gap junction tracer coupling between retinal neurons under different illumination conditions and at different times of the day and night. This cut-loading technique is a modification of scrape loading(9-12), which is based on dye loading and diffusion through open gap junction channels. Scrape loading works well in cultured cells, but not in thick slices such as intact retinas. The cut-loading technique has been used to study photoreceptor coupling in intact fish and mammalian retinas(7, 8,13), and can be used to study coupling between other retinal neurons, as described here.

Electro-Optic Computing Architectures. Volume I

DTIC Science & Technology

1998-02-01

The objective of the Electro - Optic Computing Architecture (EOCA) program was to develop multi-function electro - optic interfaces and optical...interconnect units to enhance the performance of parallel processor systems and form the building blocks for future electro - optic computing architectures...Specifically, three multi-function interface modules were targeted for development - an Electro - Optic Interface (EOI), an Optical Interconnection Unit (OW

Spatial layout optimization design of multi-type LEDs lighting source based on photoelectrothermal coupling theory

NASA Astrophysics Data System (ADS)

Xue, Lingyun; Li, Guang; Chen, Qingguang; Rao, Huanle; Xu, Ping

2018-03-01

Multiple LED-based spectral synthesis technology has been widely used in the fields of solar simulator, color mixing, and artificial lighting of plant factory and so on. Generally, amounts of LEDs are spatially arranged with compact layout to obtain the high power density output. Mutual thermal spreading among LEDs will produce the coupled thermal effect which will additionally increase the junction temperature of LED. Affected by the Photoelectric thermal coupling effect of LED, the spectrum of LED will shift and luminous efficiency will decrease. Correspondingly, the spectral synthesis result will mismatch. Therefore, thermal management of LED spatial layout plays an important role for multi-LEDs light source system. In the paper, the thermal dissipation network topology model considering the mutual thermal spreading effect among the LEDs is proposed for multi-LEDs system with various types of power. The junction temperature increment cased by the thermal coupling has the great relation with the spatial arrangement. To minimize the thermal coupling effect, an optimized method of LED spatial layout for the specific light source structure is presented and analyzed. The results showed that layout of LED with high-power are arranged in the corner and low-power in the center. Finally, according to this method, it is convenient to determine the spatial layout of LEDs in a system having any kind of light source structure, and has the advantages of being universally applicable to facilitate adjustment.

Fixture for assembling solar panels

NASA Technical Reports Server (NTRS)

Dillard, P. A.; Fritz, W. M.

1979-01-01

Vacuum fixture attaches array of silicon solar cells to mounting plate made of clear glass which holds and protects cells. Glass plate transmits, rather than absorbs, solar energy thus cooling cells for efficient operation. Device therefore reduces handling of cells and interconnecting conductors to one operation.

Transient Stability of the US Western Interconnection with High Wind and Solar Generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clark, Kara; Miller, Nicholas W.; Shao, Miaolei

The addition of large amounts of wind and solar generation to bulk power systems that are traditionally subject to operating constraints set by transient limitations is the subject of considerable concern in the industry. The US Western Interconnection (WI) is expected to experience substantial additional growth in both wind and solar generation. These plants will, to some extent, displace large central station thermal generation, both coal and gas-fired, which have traditionally helped maintain stability. This paper reports the results of a study that investigated the transient stability of the WI with high penetrations of wind and solar generation. The mainmore » goals of this work were to (1) create a realistic, baseline model of the WI, (2) test selected transient stability events, (3) investigate the impact of large amounts of wind and solar generation, and (4) examine means to improve performance.« less

The Whole Heliosphere Interval: Campaign Summaries and Early Results

NASA Technical Reports Server (NTRS)

Thompson, Barbara J.; Gibson, Sarah E.; Kozyra, Janet U.

2008-01-01

The Whole Heliosphere Interval (WHI) is an internationally coordinated observing and modeling effort to characterize the 3-dimensional interconnected solar-heliospheric-planetary system - a.k.a. the "heliophysical" system. The heart of the WHI campaign is the study of the interconnected 3-D heliophysical domain, from the interior of the Sun, to the Earth, outer planets, and into interstellar space. WHI observing campaigns began with the 3-0 solar structure from solar Carrington Rotation 2068, which ran from March 20 - April 16, 2008. Observations and models of the outer heliosphere and planetary impacts extended beyond those dates as necessary; for example, the solar wind transit time to outer planets can take months. WHI occurs during solar minimum, which optimizes our ability to characterize the 3-D heliosphere and trace the structure to the outer limits of the heliosphere. A summary of some of the key results from the WHI first workshop in August 2008 will be given.

Process for utilizing low-cost graphite substrates for polycrystalline solar cells

NASA Technical Reports Server (NTRS)

Chu, T. L. (Inventor)

1978-01-01

Low cost polycrystalline silicon solar cells supported on substrates were prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices were formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon was substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.

On-Orbit Demonstration of a Lithium-Ion Capacitor and Thin-Film Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Kukita, Akio; Takahashi, Masato; Shimazaki, Kazunori; Kobayashi, Yuki; Sakai, Tomohiko; Toyota, Hiroyuki; Takahashi, Yu; Murashima, Mio; Uno, Masatoshi; Imaizumi, Mitsuru

2014-08-01

This paper describes an on-orbit demonstration of the Next-generation Small Satellite Instrument for Electric power systems (NESSIE) on which an aluminum- laminated lithium-ion capacitor (LIC) and a lightweight solar panel called KKM-PNL, which has space solar sheets using thin-film multijunction solar cells, were installed. The flight data examined in this paper covers a period of 143 days from launch. We verified the integrity of an LIC constructed using a simple and lightweight mounting method: no significant capacitance reduction was observed. We also confirmed that inverted metamorphic multijunction triple-junction thin-film solar cells used for evaluation were healthy at 143 days after launch, because their degradation almost matched the degradation predictions for dual-junction thin-film solar cells.

A Model for Optimizing the Combination of Solar Electricity Generation, Supply Curtailment, Transmission and Storage

NASA Astrophysics Data System (ADS)

Perez, Marc J. R.

With extraordinary recent growth of the solar photovoltaic industry, it is paramount to address the biggest barrier to its high-penetration across global electrical grids: the inherent variability of the solar resource. This resource variability arises from largely unpredictable meteorological phenomena and from the predictable rotation of the earth around the sun and about its own axis. To achieve very high photovoltaic penetration, the imbalance between the variable supply of sunlight and demand must be alleviated. The research detailed herein consists of the development of a computational model which seeks to optimize the combination of 3 supply-side solutions to solar variability that minimizes the aggregate cost of electricity generated therefrom: Storage (where excess solar generation is stored when it exceeds demand for utilization when it does not meet demand), interconnection (where solar generation is spread across a large geographic area and electrically interconnected to smooth overall regional output) and smart curtailment (where solar capacity is oversized and excess generation is curtailed at key times to minimize the need for storage.). This model leverages a database created in the context of this doctoral work of satellite-derived photovoltaic output spanning 10 years at a daily interval for 64,000 unique geographic points across the globe. Underpinning the model's design and results, the database was used to further the understanding of solar resource variability at timescales greater than 1-day. It is shown that--as at shorter timescales--cloud/weather-induced solar variability decreases with geographic extent and that the geographic extent at which variability is mitigated increases with timescale and is modulated by the prevailing speed of clouds/weather systems. Unpredictable solar variability up to the timescale of 30 days is shown to be mitigated across a geographic extent of only 1500km if that geographic extent is oriented in a north/south bearing. Using technical and economic data reflecting today's real costs for solar generation technology, storage and electric transmission in combination with this model, we determined the minimum cost combination of these solutions to transform the variable output from solar plants into 3 distinct output profiles: A constant output equivalent to a baseload power plant, a well-defined seasonally-variable output with no weather-induced variability and a variable output but one that is 100% predictable on a multi-day ahead basis. In order to do this, over 14,000 model runs were performed by varying the desired output profile, the amount of energy curtailment, the penetration of solar energy and the geographic region across the continental United States. Despite the cost of supplementary electric transmission, geographic interconnection has the potential to reduce the levelized cost of electricity when meeting any of the studied output profiles by over 65% compared to when only storage is used. Energy curtailment, despite the cost of underutilizing solar energy capacity, has the potential to reduce the total cost of electricity when meeting any of the studied output profiles by over 75% compared to when only storage is used. The three variability mitigation strategies are thankfully not mutually exclusive. When combined at their ideal levels, each of the regions studied saw a reduction in cost of electricity of over 80% compared to when only energy storage is used to meet a specified output profile. When including current costs for solar generation, transmission and energy storage, an optimum configuration can conservatively provide guaranteed baseload power generation with solar across the entire continental United States (equivalent to a nuclear power plant with no down time) for less than 0.19 per kilowatt-hour. If solar is preferentially clustered in the southwest instead of evenly spread throughout the United States, and we adopt future expected costs for solar generation of 1 per watt, optimal model results show that meeting a 100% predictable output target with solar will cost no more than $0.08 per kilowatt-hour.

77 FR 76477 - Notice of Availability of the Final Environmental Impact Statement for the Quartzsite Solar...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-28

... traditional steam turbine generators. The Project would contain the central receiver or tower, a solar field... the Final Environmental Impact Statement for the Quartzsite Solar Energy Project and the Yuma Field...: Notice of Availability. SUMMARY: Quartzsite Solar Energy (QSE) has requested to interconnect the...

Automated solar module assembly line

NASA Technical Reports Server (NTRS)

Bycer, M.

1980-01-01

The solar module assembly machine which Kulicke and Soffa delivered under this contract is a cell tabbing and stringing machine, and capable of handling a variety of cells and assembling strings up to 4 feet long which then can be placed into a module array up to 2 feet by 4 feet in a series of parallel arrangement, and in a straight or interdigitated array format. The machine cycle is 5 seconds per solar cell. This machine is primarily adapted to 3 inch diameter round cells with two tabs between cells. Pulsed heat is used as the bond technique for solar cell interconnects. The solar module assembly machine unloads solar cells from a cassette, automatically orients them, applies flux and solders interconnect ribbons onto the cells. It then inverts the tabbed cells, connects them into cell strings, and delivers them into a module array format using a track mounted vacuum lance, from which they are taken to test and cleaning benches prior to final encapsulation into finished solar modules. Throughout the machine the solar cell is handled very carefully, and any contact with the collector side of the cell is avoided or minimized.

Fabrication of p(+)-n junction GaAs solar cells by a novel method

NASA Technical Reports Server (NTRS)

Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

1984-01-01

A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

Fabrication of nanostructured CIGS solar cells

NASA Astrophysics Data System (ADS)

Zhang, Hongwang; Wang, Fang; Parry, James; Perera, Samanthe; Zeng, Hao

2012-02-01

We present the work on Cu(In,Ga)(Se,S)2 based nanostructured solar cells based on nanowire arrays. CIGS as the light absorber for thin-film solar cells has been widely studied recently, due to its high absorption coefficient, long-term stability, and low-cost of fabrication. Recently, solution phase processed CIGS thin film solar cells attracted great attention due to their extremely low fabrication cost. However, the performance is lower than vacuum based thin films possibly due to higher density of defects and lower carrier mobility. On the other hand, one dimensional ordered nanostructures such as nanowires and nanorods can be used to make redial junction solar cells, where the orthogonality between light absorption and charge carrier separation can lead to enhanced PV performance. Since the charge carriers only need to traverse a short distance in the radial direction before they are separated at the heterojunction interface, the radial junction scheme can be more defect tolerant than their planar junction scheme. In this work, a wide band gap nanowire or nanotube array such as TiO2 is used as a scaffold where CIGS is conformally coated using solution phase to obtain a radial heterojunction solar cell. Their performance is compared that of the planar thin film solar cells fabricated with the same materials.

Metamorphic III–V Solar Cells: Recent Progress and Potential

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia, Ivan; France, Ryan M.; Geisz, John F.

Inverted metamorphic multijunction solar cells have been demonstrated to be a pathway to achieve the highest photovoltaic (PV) conversion efficiencies. Attaining high-quality lattice-mismatched (metamorphic) semiconductor devices is challenging. However, recent improvements to compositionally graded buffer epitaxy and junction structures have led to the achievement of high-quality metamorphic solar cells exhibiting internal luminescence efficiencies over 90%. For this high material quality, photon recycling is significant, and therefore, the optical environment of the solar cell becomes important. In this paper, we first present recent progress and performance results for 1- and 0.7-eV GaInAs solar cells grown on GaAs substrates. Then, an electroopticalmore » model is used to assess the potential performance improvements in current metamorphic solar cells under different realizable design scenarios. The results show that the quality of 1-eV subcells is such that further improving its electronic quality does not produce significant Voc increases in the four-junction inverted metamorphic subcells, unless a back reflector is used to enhance photon recycling, which would significantly complicate the structure. Conversely, improving the electronic quality of the 0.7-eV subcell would lead to significant Voc boosts, driving the progress of four-junction inverted metamorphic solar cells.« less

Influence of design variables on radiation hardness of silicon MINP solar cells

NASA Technical Reports Server (NTRS)

Anderson, W. A.; Solaun, S.; Rao, B. B.; Banerjee, S.

1985-01-01

Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0.3 ohm-cm substrate gave best efficiency whereas a deeper junction into a 1 to 4 ohm-cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Smith, Mark; Scofield, John H.; Dickman, John E.; Lush, Gregory B.; Morel, Donald L.; Ferekides, Christos; Dhere, Neelkanth G.

2002-01-01

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

Field test analysis of concentrator photovoltaic system focusing on average photon energy and temperature

NASA Astrophysics Data System (ADS)

Husna, Husyira Al; Ota, Yasuyuki; Minemoto, Takashi; Nishioka, Kensuke

2015-08-01

The concentrator photovoltaic (CPV) system is unique and different from the common flat-plate PV system. It uses a multi-junction solar cell and a Fresnel lens to concentrate direct solar radiation onto the cell while tracking the sun throughout the day. The cell efficiency could reach over 40% under high concentration ratio. In this study, we analyzed a one year set of environmental condition data of the University of Miyazaki, Japan, where the CPV system was installed. Performance ratio (PR) was discussed to describe the system’s performance. Meanwhile, the average photon energy (APE) was used to describe the spectrum distribution at the site where the CPV system was installed. A circuit simulator network was used to simulate the CPV system electrical characteristics under various environmental conditions. As for the result, we found that the PR of the CPV systems depends on the APE level rather than the cell temperature.

Self-deposition of Pt nanoparticles on graphene woven fabrics for enhanced hybrid Schottky junctions and photoelectrochemical solar cells.

PubMed

Kang, Zhe; Tan, Xinyu; Li, Xiao; Xiao, Ting; Zhang, Li; Lao, Junchao; Li, Xinming; Cheng, Shan; Xie, Dan; Zhu, Hongwei

2016-01-21

In this study, we demonstrated a self-deposition method to deposit Pt nanoparticles (NPs) on graphene woven fabrics (GWF) to improve the performance of graphene-on-silicon solar cells. The deposition of Pt NPs increased the work function of GWF and reduced the sheet resistance of GWF, thereby improving the power conversion efficiency (PCE) of graphene-on-silicon solar cells. The PCE (>10%) was further enhanced via solid electrolyte coating of the hybrid Schottky junction in the photoelectrochemical solar cells. These results suggest that the combination of self-deposition of Pt NPs and solid-state electrolyte coating of graphene-on-silicon is a promising way to produce high performance graphene-on-semiconductor solar cells.

Solar energy conversion through the interaction of plasmons with tunnel junctions. Part A: Solar cell analysis. Part B: Photoconductor analysis

NASA Technical Reports Server (NTRS)

Welsh, P. E.; Schwartz, R. J.

1988-01-01

A solar cell utilizing guided optical waves and tunnel junctions was analyzed to determine its feasibility. From this analysis, it appears that the limits imposed upon conventional multiple cell systems also limit this solar cell. Due to this limitation, it appears that the relative simplicity of the conventional multiple cell systems over the solar cell make the conventional multiple cell systems the more promising candidate for improvement. It was discovered that some superlattice structures studied could be incorporated into an infrared photodetector. This photoconductor appears to be promising as a high speed, sensitive (high D sup star sub BLIP) detector in the wavelength range from 15 to over 100 micrometers.

Optical design considerations for high-concentration photovoltaics

NASA Astrophysics Data System (ADS)

Garboushian, Vahan; Gordon, Robert

2006-08-01

Over the past 15 years, major advances in Concentrating Photovoltaics (CPV) have been achieved. Ultra-efficient Si solar cells have produced commercial concentration systems which are being fielded today and are competitively priced. Advanced research has primarily focused on significantly more efficient multi-junction solar cells for tomorrow's systems. This effort has produced sophisticated solar cells that significantly improve power production. Additional performance and cost improvements, especially in the optical system area and system integration, must be made before CPV can realize its ultimate commercial potential. Structural integrity and reliability are vital for commercial success. As incremental technical improvements are made in solar cell technologies, evaluation and 'fine-tuning' of optical systems properly matched to the solar cell are becoming increasingly necessary. As we move forward, it is increasingly important to optimize all of the interrelated elements of a CPV system for high performance without sacrificing the marketable cost and structural requirements of the system. Areas such as wavelength absorption of refractive optics need to be carefully matched to the solar cell technology employed. Reflective optics require advanced engineering models to insure uniform flux distribution without excessive losses. In Situ measurement of the 'fine-grain' improvements are difficult as multiple variables such as solar insolation, temperature, wind, altitude, etc. infringe on analytical data. This paper discusses design considerations based on 10 years of field trials of high concentration systems and their relevance for tomorrow's advanced CPV systems.

Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells.

PubMed

Li, Tiantian; Zhang, Qixing; Ni, Jian; Huang, Qian; Zhang, Dekun; Li, Baozhang; Wei, Changchun; Yan, Baojie; Zhao, Ying; Zhang, Xiaodan

2017-03-29

We used silver nanoparticles (Ag-NPs) embedded in the p-type semiconductor layer of hydrogenated amorphous silicon (a-Si:H) solar cells in the Schottky barrier contact design to modify the interface between aluminum-doped ZnO (ZnO:Al, AZO) and p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) without plasmonic absorption. The high work function of the Ag-NPs provided a good channel for the transport of photogenerated holes. A p-type nanocrystalline SiC:H layer was used to compensate for the real surface defects and voids on the surface of Ag-NPs to reduce recombination at the AZO/p-type layer interface, which then enhanced the photovoltage of single-junction a-Si:H solar cells to values as high as 1.01 V. The Ag-NPs were around 10 nm in diameter and thermally stable in the p-type a-SiC:H film at the solar-cell process temperature. We will also show that a wide range of photovoltages between 1.01 and 2.89 V could be obtained with single-, double-, and triple-junction solar cells based on the single-junction a-Si:H solar cells with tunable high photovoltage. These solar cells are suitable photocathodes for solar water-splitting applications.

Investigation of welded interconnection of large area wraparound contacted silicon solar cells

NASA Technical Reports Server (NTRS)

Lott, D. R.

1984-01-01

An investigation was conducted to evaluate the welding and temperature cycle testing of large area 5.9 x 5.9 wraparound silicon solar cells utilizing printed circuit substrates with SSC-155 interconnect copper metals and the LMSC Infrared Controlled weld station. An initial group of 5 welded modules containing Phase 2 developmental 5.9 x 5.9 cm cells were subjected to cyclical temperatures of + or 80 C at a rate of 120 cycles per day. Anomalies were noted in the adhesion of the cell contact metallization; therefore, 5 additional modules were fabricated and tested using available Phase I cells with demonstrated contact integrity. Cycling of the later module type through 12,000 cycles indicated the viability of this type of lightweight flexible array concept. This project demonstrated acceptable use of an alternate interconnect copper in combination with large area wraparound cells and emphasized the necessity to implement weld pull as opposed to solder pull procedures at the cell vendors for cells that will be interconnected by welding.

Variability metrics in Josephson Junction fabrication for Quantum Computing circuits

NASA Astrophysics Data System (ADS)

Rosenblatt, Sami; Hertzberg, Jared; Brink, Markus; Chow, Jerry; Gambetta, Jay; Leng, Zhaoqi; Houck, Andrew; Nelson, J. J.; Plourde, Britton; Wu, Xian; Lake, Russell; Shainline, Jeff; Pappas, David; Patel, Umeshkumar; McDermott, Robert

Multi-qubit gates depend on the relative frequencies of the qubits. To reliably build multi-qubit devices therefore requires careful fabrication of Josephson junctions in order to precisely set their critical currents. The Ambegaokar-Baratoff relation between tunnel conductance and critical current implies a correlation between qubit frequency spread and tunnel junction resistance spread. Here we discuss measurement of large numbers of tunnel junctions to assess these resistance spreads, which can exceed 5% of mean resistance. With the goal of minimizing these spreads, we investigate process parameters such as lithographic junction area, evaporation and masking scheme, oxidation conditions, and substrate choice, as well as test environment, design and setup. In addition, trends of junction resistance with temperature are compared with theoretical models for further insights into process and test variability.

Quantifying cadherin mechanotransduction machinery assembly/disassembly dynamics using fluorescence covariance analysis.

PubMed

Vedula, Pavan; Cruz, Lissette A; Gutierrez, Natasha; Davis, Justin; Ayee, Brian; Abramczyk, Rachel; Rodriguez, Alexis J

2016-06-30

Quantifying multi-molecular complex assembly in specific cytoplasmic compartments is crucial to understand how cells use assembly/disassembly of these complexes to control function. Currently, biophysical methods like Fluorescence Resonance Energy Transfer and Fluorescence Correlation Spectroscopy provide quantitative measurements of direct protein-protein interactions, while traditional biochemical approaches such as sub-cellular fractionation and immunoprecipitation remain the main approaches used to study multi-protein complex assembly/disassembly dynamics. In this article, we validate and quantify multi-protein adherens junction complex assembly in situ using light microscopy and Fluorescence Covariance Analysis. Utilizing specific fluorescently-labeled protein pairs, we quantified various stages of adherens junction complex assembly, the multiprotein complex regulating epithelial tissue structure and function following de novo cell-cell contact. We demonstrate: minimal cadherin-catenin complex assembly in the perinuclear cytoplasm and subsequent localization to the cell-cell contact zone, assembly of adherens junction complexes, acto-myosin tension-mediated anchoring, and adherens junction maturation following de novo cell-cell contact. Finally applying Fluorescence Covariance Analysis in live cells expressing fluorescently tagged adherens junction complex proteins, we also quantified adherens junction complex assembly dynamics during epithelial monolayer formation.

75 FR 66389 - Notice of Availability of the Record of Decision for the Blythe Solar Power Project and...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-10-28

... development agreement with Solar Millennium and requested that the project be assigned to Palo Verde Solar I...) transmission line will be constructed to interconnect to the Devers-Palo Verde II 500-kV transmission line at...

Initial results for the silicon monolithically interconnected solar cell product

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Shreve, K. P.; Cotter, J. E.; Barnett, A. M.

1995-01-01

This proprietary technology is based on AstroPower's electrostatic bonding and innovative silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and then thinned to final thicknesses less than 25 micron. These devices are based on the features of a thin, light-trapping silicon solar cell: high voltage, high current, light weight (high specific power) and high radiation resistance. Monolithic interconnection allows the fabrication costs on a per watt basis to be roughly independent of the array size, power or voltage, therefore, the cost effectiveness to manufacture solar cell arrays with output powers ranging from milliwatts up to four watts and output voltages ranging from 5 to 500 volts will be similar. This compares favorably to conventionally manufactured, commercial solar cell arrays, where handling of small parts is very labor intensive and costly. In this way, a wide variety of product specifications can be met using the same fabrication techniques. Prototype solar cells have demonstrated efficiencies greater than 11%. An open-circuit voltage of 5.4 volts, fill factor of 65%, and short-circuit current density of 28 mA/sq cm at AM1.5 illumination are typical. Future efforts are being directed to optimization of the solar cell operating characteristics as well as production processing. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. These features make this proprietary technology an excellent candidate for a large number of consumer products.

Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

NASA Technical Reports Server (NTRS)

Lee, H. S.; Yamaguchi, M.; Elkins-Daukes, N. J.; Khan, A.; Takamoto, T.; Imaizumi, M.; Ohshima, T.; Itoh, H.

2007-01-01

A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

NREL Leadership Contributes to Revision of Key Energy Integration Standard,

Science.gov Websites

interconnection standard for distributed energy resource technologies, including rooftop solar panels. The , which establishes uniform requirements for interconnection of distributed energy resources (DERs), such foundation for integrating clean renewable energy technologies as well as other distributed generation and

Energy Systems Integration Newsletter - January 2017 | Energy Systems

Science.gov Websites

) project with PV manufacturer First Solar and NREL, First Solar designed an advanced plant-level controller relatively long history of interconnecting solar photovoltaic (PV) systems to its electric grid, with state Photo of a solar array. Tests Show Large Solar Plants Can Balance a Low-Carbon Grid In recent years

Investigation of SIS Up-Converters for Use in Multi-pixel Receivers

NASA Astrophysics Data System (ADS)

Uzawa, Yoshinori; Kojima, Takafumi; Shan, Wenlei; Gonzalez, Alvaro; Kroug, Matthias

2018-02-01

We propose the use of SIS junctions as a frequency up-converter based on quasiparticle mixing in frequency division multiplexing circuits for multi-pixel heterodyne receivers. Our theoretical calculation showed that SIS junctions have the potential to achieve positive gain and low-noise characteristics in the frequency up-conversion process at local oscillator (LO) frequencies larger than the voltage scale of the dc nonlinearity of the SIS junction. We experimentally observed up-conversion gain in a mixer with four-series Nb-based SIS junctions at the LO frequency of 105 GHz for the first time.

Electro-Optic Computing Architectures: Volume II. Components and System Design and Analysis

DTIC Science & Technology

1998-02-01

The objective of the Electro - Optic Computing Architecture (EOCA) program was to develop multi-function electro - optic interfaces and optical...interconnect units to enhance the performance of parallel processor systems and form the building blocks for future electro - optic computing architectures...Specifically, three multi-function interface modules were targeted for development - an Electro - Optic Interface (EOI), an Optical Interconnection Unit

An induced junction photovoltaic cell

NASA Technical Reports Server (NTRS)

Call, R. L.

1974-01-01

Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

Low temperature junction growth using hot-wire chemical vapor deposition

DOEpatents

Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

2014-02-04

A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Modeling and optimal designs for dislocation and radiation tolerant single and multijunction solar cells

NASA Astrophysics Data System (ADS)

Mehrotra, A.; Alemu, A.; Freundlich, A.

2011-02-01

Crystalline defects (e.g. dislocations or grain boundaries) as well as electron and proton induced defects cause reduction of minority carrier diffusion length which in turn results in degradation of efficiency of solar cells. Hetro-epitaxial or metamorphic III-V devices with low dislocation density have high BOL efficiencies but electron-proton radiation causes degradation in EOL efficiencies. By optimizing the device design (emitter-base thickness, doping) we can obtain highly dislocated metamorphic devices that are radiation resistant. Here we have modeled III-V single and multi junction solar cells using drift and diffusion equations considering experimental III-V material parameters, dislocation density, 1 Mev equivalent electron radiation doses, thicknesses and doping concentration. Thinner device thickness leads to increment in EOL efficiency of high dislocation density solar cells. By optimizing device design we can obtain nearly same EOL efficiencies from high dislocation solar cells than from defect free III-V multijunction solar cells. As example defect free GaAs solar cell after optimization gives 11.2% EOL efficiency (under typical 5x1015cm-2 1 MeV electron fluence) while a GaAs solar cell with high dislocation density (108 cm-2) after optimization gives 10.6% EOL efficiency. The approach provides an additional degree of freedom in the design of high efficiency space cells and could in turn be used to relax the need for thick defect filtering buffer in metamorphic devices.

Design and optimization of the plasmonic graphene/InP thin-film solar-cell structure

NASA Astrophysics Data System (ADS)

Nematpour, Abedin; Nikoufard, Mahmoud; Mehragha, Rouholla

2018-06-01

In this paper, a graphene/InP thin-film Schottky-junction solar cell with a periodic array of plasmonic back-reflector is proposed. In this structure, a single-layer graphene sheet is deposited on the surface of the InP to form a Schottky junction. Then, the layer stack of the proposed solar-cell is optimized to have a maximum optical absorption of 〈A W〉  =  0.985 (98.5%) and short-circuit current density of J sc  =  33.01 mA cm‑2.

76 FR 57733 - Notice of Cancellation of Environmental Impact Statement for the Interconnection of the Hualapai...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-16

... DEPARTMENT OF ENERGY Western Area Power Administration Notice of Cancellation of Environmental Impact Statement for the Interconnection of the Hualapai Valley Solar Project, Mohave County, AZ (DOE/EIS... Impact Statement. SUMMARY: The U.S. Department of Energy (DOE), Western Area Power Administration...

NREL: U.S.-China Renewable Energy Partnership Publications

Science.gov Websites

storage or to solar photovoltaic (PV) technology, including higher energy value, ancillary services value Partnership (USCREP) activities. 2017 Comparative Analysis and Considerations for PV Interconnection Standards main objectives of this report are to evaluate China's photovoltaic (PV) interconnection standards and

Summary of solar cell data from the Long Duration Exposure Facility (LDEF)

NASA Technical Reports Server (NTRS)

Hill, David C.; Rose, M. Frank

1994-01-01

The Long Duration Exposure Facility (LDEF) was composed of many separate experiments, some of which contained solar cells. These solar cells were distributed at various positions on the LDEF and, therefore, were exposed to the space environment with an orientational dependence. This report will address the space environmental effects on solar cells and solar cell assemblies (SCA's), including electrical interconnects and associated insulation blankets where flown in conjunction with solar cells.

Advanced solar panel designs

NASA Technical Reports Server (NTRS)

Ralph, E. L.; Linder, E. B.

1996-01-01

Solar panel designs that utilize new high-efficiency solar cells and lightweight rigid panel technologies are described. The resulting designs increase the specific power (W/kg) achievable in the near-term and are well suited to meet the demands of higher performance small satellites (smallsats). Advanced solar panel designs have been developed and demonstrated on two NASA SBIR contracts at Applied Solar. The first used 19% efficient, large area (5.5 cm x 6.5 cm) GaAs/Ge solar cells with a lightweight rigid graphite epoxy isogrid substrate configuration. A 1,445 cm(exp 2) coupon was fabricated and tested to demonstrate 60 W/kg with a high potential of achieving 80 W/kg. The second panel design used new 22% efficiency, dual junction GaInP2/GaAs/Ge solar cells combined with a lightweight aluminum core/graphite fiber mesh facesheet substrate. A 1,445 cm(exp 2) coupon was fabricated and tested to demonstrate 105 W/kg with the potential of achieving 115 W/kg. This paper will address the construction details for the GaAs/isogrid and dual-junction GaAs/carbon mesh panel configurations. These are ultimately sized to provide 75 Watts and 119 Watts respectively for smallsats or may be used as modular building blocks for larger systems. GaAs/isogrid and dual-junction GaAs/carbon mesh coupons have been fabricated and tested to successfully demonstrate critical performance parameters and results are also provided here.

A solar photovoltaic system with ideal efficiency close to the theoretical limit.

PubMed

Zhao, Yuan; Sheng, Ming-Yu; Zhou, Wei-Xi; Shen, Yan; Hu, Er-Tao; Chen, Jian-Bo; Xu, Min; Zheng, Yu-Xiang; Lee, Young-Pak; Lynch, David W; Chen, Liang-Yao

2012-01-02

In order to overcome some physical limits, a solar system consisting of five single-junction photocells with four optical filters is studied. The four filters divide the solar spectrum into five spectral regions. Each single-junction photocell with the highest photovoltaic efficiency in a narrower spectral region is chosen to optimally fit into the bandwidth of that spectral region. Under the condition of solar radiation ranging from 2.4 SUN to 3.8 SUN (AM1.5G), the measured peak efficiency under 2.8 SUN radiation reaches about 35.6%, corresponding to an ideal efficiency of about 42.7%, achieved for the photocell system with a perfect diode structure. Based on the detailed-balance model, the calculated theoretical efficiency limit for the system consisting of 5 single-junction photocells can be about 52.9% under 2.8 SUN (AM1.5G) radiation, implying that the ratio of the highest photovoltaic conversion efficiency for the ideal photodiode structure to the theoretical efficiency limit can reach about 80.7%. The results of this work will provide a way to further enhance the photovoltaic conversion efficiency for solar cell systems in future applications.

Advanced interface modelling of n-Si/HNO3 doped graphene solar cells to identify pathways to high efficiency

NASA Astrophysics Data System (ADS)

Zhao, Jing; Ma, Fa-Jun; Ding, Ke; Zhang, Hao; Jie, Jiansheng; Ho-Baillie, Anita; Bremner, Stephen P.

2018-03-01

In graphene/silicon solar cells, it is crucial to understand the transport mechanism of the graphene/silicon interface to further improve power conversion efficiency. Until now, the transport mechanism has been predominantly simplified as an ideal Schottky junction. However, such an ideal Schottky contact is never realised experimentally. According to literature, doped graphene shows the properties of a semiconductor, therefore, it is physically more accurate to model graphene/silicon junction as a Heterojunction. In this work, HNO3-doped graphene/silicon solar cells were fabricated with the power conversion efficiency of 9.45%. Extensive characterization and first-principles calculations were carried out to establish an advanced technology computer-aided design (TCAD) model, where p-doped graphene forms a straddling heterojunction with the n-type silicon. In comparison with the simple Schottky junction models, our TCAD model paves the way for thorough investigation on the sensitivity of solar cell performance to graphene properties like electron affinity. According to the TCAD heterojunction model, the cell performance can be improved up to 22.5% after optimizations of the antireflection coatings and the rear structure, highlighting the great potentials for fabricating high efficiency graphene/silicon solar cells and other optoelectronic devices.

Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Kalla, Ajay; Gonzalez, Damian; Ribelin, Rosine

2005-01-01

Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

Printed interconnects for photovoltaic modules

DOE PAGES

Fields, J. D.; Pach, G.; Horowitz, K. A. W.; ...

2016-10-21

Film-based photovoltaic modules employ monolithic interconnects to minimize resistance loss and enhance module voltage via series connection. Conventional interconnect construction occurs sequentially, with a scribing step following deposition of the bottom electrode, a second scribe after deposition of absorber and intermediate layers, and a third following deposition of the top electrode. This method produces interconnect widths of about 300 µm, and the area comprised by interconnects within a module (generally about 3%) does not contribute to power generation. The present work reports on an increasingly popular strategy capable of reducing the interconnect width to less than 100 µm: printing interconnects.more » Cost modeling projects a savings of about $0.02/watt for CdTe module production through the use of printed interconnects, with savings coming from both reduced capital expense and increased module power output. Printed interconnect demonstrations with copper-indium-gallium-diselenide and cadmium-telluride solar cells show successful voltage addition and miniaturization down to 250 µm. As a result, material selection guidelines and considerations for commercialization are discussed.« less

Method of making a back contacted solar cell

DOEpatents

Gee, James M.

1995-01-01

A back-contacted solar cell having laser-drilled vias connecting the front-surface carrier-collector junction to an electrode grid on the back surface. The structure may also include a rear surface carrier-collector junction connected to the same grid. The substrate is connected to a second grid which is interdigitated with the first. Both grids are configured for easy series connection with neighboring cells. Several processes are disclosed to produce the cell.

Epitaxial solar cells fabrication

NASA Technical Reports Server (NTRS)

Daiello, R. V.; Robinson, P. H.; Kressel, H.

1975-01-01

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

NASA Technical Reports Server (NTRS)

Walker, G. H.; Conway, E. J.

1978-01-01

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

Studies of silicon PN junction solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1975-01-01

Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

Ultra-precision fabrication of high density micro-optical backbone interconnections for data center and mobile application

NASA Astrophysics Data System (ADS)

Lohmann, U.; Jahns, J.; Wagner, T.; Werner, C.

2012-10-01

A microoptical 3D interconnection scheme and fabricated samples of this fiberoptical multi-channel interconnec- tion with an actual capacity of 144 channels were shown. Additionally the aspects of micrometer-fabrication of such microoptical interconnection modules in the view of alignment-tolerances were considered. For the realiza- tion of the interconnection schemes, the approach of planar-integrated free space optics (PIFSO) is used with its well known advantages. This approach offers the potential for complex interconnectivity, and yet compact size.

Imaging the Solar Cell P-N Junction and Depletion Region Using Secondary Electron Contrast

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heath, J. T.; Jiang, C. S.; Al-Jassim, M. M.

2011-01-01

We report on secondary electron (SE) images of cross-sectioned multicrystalline Si and GaAs/GaInP solar cell devices, focusing on quantifying the relationship between the apparent n{sup +}-p contrast and characteristic electronic features of the device. These samples allow us to compare the SE signal from devices which have very different physical characteristics: differing materials, diffused junction versus abrupt junction, heterojunction versus homojunction. Despite these differences, we find that the SE image contrast for both types of sample, and as a function of reverse bias across the diode, closely agrees with PC1D simulations of the bulk electrostatic potential in the device, accuratelymore » yielding the depletion edge and width. A spatial derivative of the SE data shows a local maximum at the metallurgical junction. Such data are valuable, for example, in studying the conformity of a diffused junction to the textured surface topography. These data also extend our understanding of the origin of the SE contrast.« less

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

PubMed

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-17

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

High Radiation Resistance IMM Solar Cell

NASA Technical Reports Server (NTRS)

Pan, Noren

2015-01-01

Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

Transient Stability and Frequency Response of the US Western Interconnection Under Conditions of High Wind and Solar Generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Nicholas W.; Shao, Miaolei; Pajic, Slobodan

The addition of large amounts of wind and solar generation to bulk power systems that are traditionally subject to operating constraints set by transient stability and frequency response limitations is the subject of considerable concern in the industry. The US Western Interconnection (WI) is expected to experience substantial additional growth in both wind and solar generation. These plants will, to some extent, displace large central station thermal generation, both coal and gas-fired, which have traditionally helped maintain stability. This paper reports the results of a study that investigated the transient stability and frequency response of the WI with high penetrationsmore » of wind and solar generation. The main goals of this work were to (1) create a realistic, baseline model of the WI, (2) test selected transient stability and frequency events, (3) investigate the impact of large amounts of wind and solar generation, and (4) examine means to improve performance.« less

Transient Stability and Frequency Response of the Us Western Interconnection Under Conditions of High Wind and Solar Generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clark, Kara; Miller, Nicholas W.; Shao, Miaolei

Adding large amounts of wind and solar generation to bulk power systems that are traditionally subject to operating constraints set by transient stability and frequency response limitations is the subject of considerable concern in the industry. The US Western Interconnection (WI) is expected to experience substantial additional growth in both wind and solar generation. These plants will, to some extent, displace large central station thermal generation, both coal and gas-fired, which have traditionally helped maintain stability. Our paper reports the results of a study that investigated the transient stability and frequency response of the WI with high penetrations of windmore » and solar generation. Moreover, the main goals of this work were to (1) create a realistic, baseline model of the WI, (2) test selected transient stability and frequency events, (3) investigate the impact of large amounts of wind and solar generation, and (4) examine means to improve performance.« less

Impact of Isothermal Aging and Testing Temperature on Large Flip-Chip BGA Interconnect Mechanical Shock Performance

NASA Astrophysics Data System (ADS)

Lee, Tae-Kyu; Chen, Zhiqiang; Guirguis, Cherif; Akinade, Kola

2017-10-01

The stability of solder interconnects in a mechanical shock environment is crucial for large body size flip-chip ball grid array (FCBGA) electronic packages. Additionally, the junction temperature increases with higher electric power condition, which brings the component into an elevated temperature environment, thus introducing another consideration factor for mechanical stability of interconnection joints. Since most of the shock performance data available were produced at room temperature, the effect of elevated temperature is of interest to ensure the reliability of the device in a mechanical shock environment. To achieve a stable␣interconnect in a dynamic shock environment, the interconnections must tolerate mechanical strain, which is induced by the shock wave input and reaches the particular component interconnect joint. In this study, large body size (52.5 × 52.5 mm2) FCBGA components assembled on 2.4-mm-thick boards were tested with various isothermal pre-conditions and testing conditions. With a heating element embedded in the test board, a test temperature range from room temperature to 100°C was established. The effects of elevated temperature on mechanical shock performance were investigated. Failure and degradation mechanisms are identified and discussed based on the microstructure evolution and grain structure transformations.

Installation and Assembly, Electrical Ground Support Equipment (GSE), Specification for

NASA Technical Reports Server (NTRS)

Denson, Erik C.

2014-01-01

This specification covers the general workmanship requirements and procedures for the complete installation and assembly of electrical ground support equipment (EGSE) such as terminal distributors, junction boxes, conduit and fittings, cable trays and accessories, interconnecting cables (including routing requirements), motor-control equipment, and necessary hardware as specified by the applicable contract and drawings.

Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

NASA Astrophysics Data System (ADS)

Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman

2016-05-01

We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

Effect of gap junctions on the firing patterns and synchrony for different external inputs in the striatal fast-spiking neuron network.

PubMed

Zhang, Mingming; Zhao, Zongya; He, Ping; Wang, Jue

2014-01-01

Gap junctions are the mechanism for striatal fast-spiking interneurons (FSIs) to interconnect with each other and play an important role in determining the physiological functioning of the FSIs. To investigate the effect of gap junctions on the firing activities and synchronization of the network for different external inputs, a simple network with least connections and a Newman-Watts small-world network were constructed. Our research shows that both properties of neural networks are related to the conductance of the gap junctions, as well as the frequency and correlation of the external inputs. The effect of gap junctions on the synchronization of network is different for inputs with different frequencies and correlations. The addition of gap junctions can promote the network synchrony in some conditions but suppress it in others, and they can inhibit the firing activities in most cases. Both the firing rate and synchronization of the network increase along with the increase of the electrical coupling strength for inputs with low frequency and high correlation. Thus, the network of coupled FSIs can act as a detector for synchronous synaptic input from cortex and thalamus.

Investigation of solar cells fabricated on low-cost silicon sheet materials using 1 MeV electron irradiation

NASA Technical Reports Server (NTRS)

Kachare, A. H.; Hyland, S. L.; Garlick, G. F. J.

1981-01-01

The use of high energy electron irradiation is investigated as a controlled means to study in more detail the junction depletion layer processes of solar cells made on various low-cost silicon sheet materials. Results show that solar cells made on Czochralski grown silicon exhibit enhancement of spectral response in the shorter wavelength region when irradiated with high energy electrons. The base region damage can be reduced by subsequent annealing at 450 C which restores the degraded longer wavelength response, although the shorter wavelength enhancement persists. The second diode component of the cell dark forward bias current is also reduced by electron irradiation, while thermal annealing at 450 C without electron irradiation can also produce these same effects. Electron irradiation produces small changes in the shorter wavelength spectral responses and junction improvements in solar cells made on WEB, EFG, and HEM silicon. It is concluded that these beneficial effects on cell characteristics are due to the reduction of oxygen associated deep level recombination centers in the N(+) diffused layer and in the junction.

Electron Radiation Damage of (alga) As-gaas Solar Cells

NASA Technical Reports Server (NTRS)

Loo, R.; Kamath, G. S.; Knechtli, R.

1979-01-01

Solar cells (2 cm by 2 cm (AlGa) As-GaAs cells) were fabricated and then subjected to irradiation at normal incidence by electrons. The influence of junction depth and n-type buffer layer doping level on the cell's resistance to radiation damage was investigated. The study shows that (1) a 0.3 micrometer deep junction results in lower damage to the cells than does a 0.5 micrometer junction, and (2) lowering the n buffer layer doping density does not improve the radiation resistance of the cell. Rather, lowering the doping density decreases the solar cell's open circuit voltage. Some preliminary thermal annealing experiments in vacuum were performed on the (AlGa)As-GaAs solar cells damaged by 1-MeV electron irradiation. The results show that cell performance can be expected to partially recover at 200 C with more rapid and complete recovery occurring at higher temperature. For a 0.5hr anneal at 400 C, 90% of the initial power is recovered. The characteristics of the (AlGa)As-GaAs cells both before and after irradiation are described.

Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells.

PubMed

Kim, Hong-Sik; Patel, Malkeshkumar; Park, Hyeong-Ho; Ray, Abhijit; Jeong, Chaehwan; Kim, Joondong

2016-04-06

Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects.

Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells.

PubMed

Jiao, Tianpeng; Liu, Jian; Wei, Dapeng; Feng, Yanhui; Song, Xuefen; Shi, Haofei; Jia, Shuming; Sun, Wentao; Du, Chunlei

2015-09-16

The conventional graphene-silicon Schottky junction solar cell inevitably involves the graphene growth and transfer process, which results in complicated technology, loss of quality of the graphene, extra cost, and environmental unfriendliness. Moreover, the conventional transfer method is not well suited to conformationally coat graphene on a three-dimensional (3D) silicon surface. Thus, worse interfacial conditions are inevitable. In this work, we directly grow graphene nanowalls (GNWs) onto the micropyramidal silicon (MP) by the plasma-enhanced chemical vapor deposition method. By controlling growth time, the cell exhibits optimal pristine photovoltaic performance of 3.8%. Furthermore, we improve the conductivity of the GNW electrode by introducing the silver nanowire (AgNW) network, which could achieve lower sheet resistance. An efficiency of 6.6% has been obtained for the AgNWs-GNWs-MP solar cell without any chemical doping. Meanwhile, the cell exhibits excellent stability exposed to air. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency, and stable Schottky junction solar cells.

Crystalline silicon photovoltaics via low-temperature TiO 2/Si and PEDOT/Si heterojunctions

NASA Astrophysics Data System (ADS)

Nagamatsu, Ken Alfred

The most important goals in developing solar cell technology are to achieve high power conversion efficiencies and lower costs of manufacturing. Solar cells based on crystalline silicon currently dominate the market because they can achieve high efficiency. However, conventional p-n junction solar cells require high-temperature diffusions of dopants, and conventional heterojunction cells based on amorphous silicon require plasma-enhanced deposition, both of which can add manufacturing costs. This dissertation investigates an alternative approach, which is to form crystalline-silicon-based solar cells using heterojunctions with materials that are easily deposited at low temperatures and without plasma enhancement, such as organic semiconductors and metal oxides. We demonstrate a heterojunction between the organic polymer, poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT), and crystalline silicon, which acts as a hole-selective contact and an alternative to a diffused p-n junction. We also present the use of a heterojunction between titanium dioxide and crystalline silicon as a passivating electron-selective contact. The Si/TiO2 heterojunction is demonstrated for the first time as a back-surface field in a crystalline silicon solar cell, and is incorporated into a PEDOT/Si device. The resulting PEDOT/Si/TiO2 solar cell represents an alternative to conventional silicon solar cells that rely on thermally-diffused junctions or plasma-deposited heterojunctions. Finally, we investigate the merits of using conductive networks of silver nanowires to enhance the photovoltaic performance of PEDOT/Si solar cells. The investigation of these materials and devices contributes to the growing body of work regarding crystalline silicon solar cells made with selective contacts.

Process development for automated solar cell and module production. Task 4: Automated array assembly

NASA Technical Reports Server (NTRS)

1980-01-01

A process sequence which can be used in conjunction with automated equipment for the mass production of solar cell modules for terrestrial use was developed. The process sequence was then critically analyzed from a technical and economic standpoint to determine the technological readiness of certain process steps for implementation. The steps receiving analysis were: back contact metallization, automated cell array layup/interconnect, and module edge sealing. For automated layup/interconnect, both hard automation and programmable automation (using an industrial robot) were studied. The programmable automation system was then selected for actual hardware development.

Role of inter-tube coupling and quantum interference on electrical transport in carbon nanotube junctions

NASA Astrophysics Data System (ADS)

Tripathy, Srijeet; Bhattacharyya, Tarun Kanti

2016-09-01

Due to excellent transport properties, Carbon nanotubes (CNTs) show a lot of promise in sensor and interconnect technology. However, recent studies indicate that the conductance in CNT/CNT junctions are strongly affected by the morphology and orientation between the tubes. For proper utilization of such junctions in the development of CNT based technology, it is essential to study the electronic properties of such junctions. This work presents a theoretical study of the electrical transport properties of metallic Carbon nanotube homo-junctions. The study focuses on discerning the role of inter-tube interactions, quantum interference and scattering on the transport properties on junctions between identical tubes. The electronic structure and transport calculations are conducted with an Extended Hückel Theory-Non Equilibrium Green's Function based model. The calculations indicate conductance to be varying with a changing crossing angle, with maximum conductance corresponding to lattice registry, i.e. parallel configuration between the two tubes. Further calculations for such parallel configurations indicate onset of short and long range oscillations in conductance with respect to changing overlap length. These oscillations are attributed to inter-tube coupling effects owing to changing π orbital overlap, carrier scattering and quantum interference of the incident, transmitted and reflected waves at the inter-tube junction.

NREL, SolarCity Addressing Challenges of High Penetrations of Distributed

Science.gov Websites

Companies NREL, SolarCity Addressing Challenges of High Penetrations of Distributed Photovoltaics NREL is , reliability, and stability challenges of interconnecting high penetrations of distributed photovoltaics (PV country that distributed solar is not a liability for reliability-and can even be an asset. Project Impact

78 FR 7523 - Small Generator Interconnection Agreements and Procedures

Federal Register 2010, 2011, 2012, 2013, 2014

2013-02-01

... requests and the growth in solar photovoltaic (PV) installations, driven in part by state renewable energy.... Background 6 A. Order No. 2006 6 B. Solar Energy Industries Association Petition.. 12 III. Need for Reform 18... of a DC generator to alternating voltage and current. For example, the output of a solar panel is DC...

75 FR 52776 - Notice of Availability of the Draft Environmental Impact Statement for the Desert Sunlight...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-08-27

...) solar photovoltaic (PV) facility and associated 220- kilovolt (kV) generation interconnection line (gen... solar PV facility on public lands in compliance with FLPMA, NEPA, BLM ROW and land use planning... Holdings, LLC Desert Sunlight Solar Farm Project and Possible California Desert Conservation Area Plan...

Low-high junction theory applied to solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.

1974-01-01

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

NASA Technical Reports Server (NTRS)

Luke, K. L.; Cheng, L.-J.

1986-01-01

Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.

Application of the SEM to the measurement of solar cell parameters

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Andrews, C. W.

1977-01-01

Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Soft, thin skin-mounted power management systems and their use in wireless thermography

NASA Astrophysics Data System (ADS)

Lee, Jung Woo; Xu, Renxiao; Lee, Seungmin; Jang, Kyung-In; Yang, Yichen; Banks, Anthony; Yu, Ki Jun; Kim, Jeonghyun; Xu, Sheng; Ma, Siyi; Jang, Sung Woo; Won, Phillip; Li, Yuhang; Kim, Bong Hoon; Choe, Jo Young; Huh, Soojeong; Kwon, Yong Ho; Huang, Yonggang; Paik, Ungyu; Rogers, John A.

2016-05-01

Power supply represents a critical challenge in the development of body-integrated electronic technologies. Although recent research establishes an impressive variety of options in energy storage (batteries and supercapacitors) and generation (triboelectric, piezoelectric, thermoelectric, and photovoltaic devices), the modest electrical performance and/or the absence of soft, biocompatible mechanical properties limit their practical use. The results presented here form the basis of soft, skin-compatible means for efficient photovoltaic generation and high-capacity storage of electrical power using dual-junction, compound semiconductor solar cells and chip-scale, rechargeable lithium-ion batteries, respectively. Miniaturized components, deformable interconnects, optimized array layouts, and dual-composition elastomer substrates, superstrates, and encapsulation layers represent key features. Systematic studies of the materials and mechanics identify optimized designs, including unusual configurations that exploit a folded, multilayer construct to improve the functional density without adversely affecting the soft, stretchable characteristics. System-level examples exploit such technologies in fully wireless sensors for precision skin thermography, with capabilities in continuous data logging and local processing, validated through demonstrations on volunteer subjects in various realistic scenarios.

Soft, thin skin-mounted power management systems and their use in wireless thermography.

PubMed

Lee, Jung Woo; Xu, Renxiao; Lee, Seungmin; Jang, Kyung-In; Yang, Yichen; Banks, Anthony; Yu, Ki Jun; Kim, Jeonghyun; Xu, Sheng; Ma, Siyi; Jang, Sung Woo; Won, Phillip; Li, Yuhang; Kim, Bong Hoon; Choe, Jo Young; Huh, Soojeong; Kwon, Yong Ho; Huang, Yonggang; Paik, Ungyu; Rogers, John A

2016-05-31

Power supply represents a critical challenge in the development of body-integrated electronic technologies. Although recent research establishes an impressive variety of options in energy storage (batteries and supercapacitors) and generation (triboelectric, piezoelectric, thermoelectric, and photovoltaic devices), the modest electrical performance and/or the absence of soft, biocompatible mechanical properties limit their practical use. The results presented here form the basis of soft, skin-compatible means for efficient photovoltaic generation and high-capacity storage of electrical power using dual-junction, compound semiconductor solar cells and chip-scale, rechargeable lithium-ion batteries, respectively. Miniaturized components, deformable interconnects, optimized array layouts, and dual-composition elastomer substrates, superstrates, and encapsulation layers represent key features. Systematic studies of the materials and mechanics identify optimized designs, including unusual configurations that exploit a folded, multilayer construct to improve the functional density without adversely affecting the soft, stretchable characteristics. System-level examples exploit such technologies in fully wireless sensors for precision skin thermography, with capabilities in continuous data logging and local processing, validated through demonstrations on volunteer subjects in various realistic scenarios.

Soft, thin skin-mounted power management systems and their use in wireless thermography

PubMed Central

Lee, Jung Woo; Xu, Renxiao; Lee, Seungmin; Jang, Kyung-In; Yang, Yichen; Banks, Anthony; Yu, Ki Jun; Kim, Jeonghyun; Xu, Sheng; Ma, Siyi; Jang, Sung Woo; Won, Phillip; Li, Yuhang; Kim, Bong Hoon; Choe, Jo Young; Huh, Soojeong; Kwon, Yong Ho; Huang, Yonggang; Paik, Ungyu; Rogers, John A.

2016-01-01

Power supply represents a critical challenge in the development of body-integrated electronic technologies. Although recent research establishes an impressive variety of options in energy storage (batteries and supercapacitors) and generation (triboelectric, piezoelectric, thermoelectric, and photovoltaic devices), the modest electrical performance and/or the absence of soft, biocompatible mechanical properties limit their practical use. The results presented here form the basis of soft, skin-compatible means for efficient photovoltaic generation and high-capacity storage of electrical power using dual-junction, compound semiconductor solar cells and chip-scale, rechargeable lithium-ion batteries, respectively. Miniaturized components, deformable interconnects, optimized array layouts, and dual-composition elastomer substrates, superstrates, and encapsulation layers represent key features. Systematic studies of the materials and mechanics identify optimized designs, including unusual configurations that exploit a folded, multilayer construct to improve the functional density without adversely affecting the soft, stretchable characteristics. System-level examples exploit such technologies in fully wireless sensors for precision skin thermography, with capabilities in continuous data logging and local processing, validated through demonstrations on volunteer subjects in various realistic scenarios. PMID:27185907

Fair comparison of complexity between a multi-band CAP and DMT for data center interconnects.

PubMed

Wei, J L; Sanchez, C; Giacoumidis, E

2017-10-01

We present, to the best of our knowledge, the first known detailed analysis and fair comparison of complexity of a 56 Gb/s multi-band carrierless amplitude and phase (CAP) and discrete multi-tone (DMT) over 80 km dispersion compensation fiber-free single-mode fiber links based on intensity modulation and direct detection for data center interconnects. We show that the matched finite impulse response filters and inverse fast Fourier transform (IFFT)/FFT take the majority of the complexity of the multi-band CAP and DMT, respectively. The choice of the multi-band CAP sub-band count and the DMT IFFT/FFT size makes significant impact on the system complexity or performance, and trade-off must be considered.

Solar cell with a gallium nitride electrode

DOEpatents

Pankove, Jacques I.

1979-01-01

A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

Proposal of leak path passivation for InGaN solar cells to reduce the leakage current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ke, E-mail: ke.wang@chiba-u.jp; Imai, Daichi; Kusakabe, Kazuhide

2016-01-25

We propose some general ways to passivate the leak paths in InGaN solar cells and report some experimental evidences of its effectiveness. By adopting an AlOx passivation process, the photovoltaic performances of GaN pn-junctions and InGaN solar cells, grown by molecular beam epitaxy, have been significantly improved. The open circuit voltage under 1 sun illumination increases from 1.46 to 2.26 V for a GaN pn junction, and from 0.95 to 1.27 V for an InGaN solar cell, demonstrating evidence of leak path passivation (LPP) by AlOx. The proposed LPP is expected to be a realistic way to exploit the potential of thickmore » and relaxed but defective InGaN for solar cell applications.« less

Analysis and evalaution in the production process and equipment area of the low-cost solar array project. [including modifying gaseous diffusion and using ion implantation

NASA Technical Reports Server (NTRS)

Goldman, H.; Wolf, M.

1979-01-01

The manufacturing methods for photovoltaic solar energy utilization are assessed. Economic and technical data on the current front junction formation processes of gaseous diffusion and ion implantation are presented. Future proposals, including modifying gaseous diffusion and using ion implantation, to decrease the cost of junction formation are studied. Technology developments in current processes and an economic evaluation of the processes are included.

Method of making a back contacted solar cell

DOEpatents

Gee, J.M.

1995-11-21

A back-contacted solar cell is described having laser-drilled vias connecting the front-surface carrier-collector junction to an electrode grid on the back surface. The structure may also include a rear surface carrier-collector junction connected to the same grid. The substrate is connected to a second grid which is interdigitated with the first. Both grids are configured for easy series connection with neighboring cells. Several processes are disclosed to produce the cell. 2 figs.

Gas-liquid flow splitting in T-junction with inclined lateral arm

NASA Astrophysics Data System (ADS)

Yang, Le-le; Liu, Shuo; Li, Hua; Zhang, Jian; Wu, Ying-xiang; Xu, Jing-yu

2018-02-01

This paper studies the gas-liquid flow splitting in T-junction with inclined lateral arm. The separation mechanism of the T-junction is related to the pressure distribution in the T-junction. It is shown that the separation efficiency strongly depends on the inclination angle, when the angle ranges from 0° to 30°, while not so strongly for angles in the range from 30° to 90° Increasing the number of connecting tubes is helpful for the gas-liquid separation, and under the present test conditions, with four connecting tubes, a good separation performance can be achieved. Accordingly, a multi-tube Y-junction separator with four connecting tubes is designed for the experimental investigation. A good agreement between the simulated and measured data shows that there is an optimal split ratio to achieve the best performance for the multi-tube Y-junction separator.

DGIC Interconnection Insights | Distributed Generation Interconnection

Science.gov Websites

Collaborative | NREL disseminate analysis findings to inform decision making and planning. Cost (SEPA) What is the need for cost certainty? As the distributed solar photovoltaic (PV) industry has , equitably and at a reasonable cost. This dynamic is now playing out in the cost certainty proposals being

High Efficiency Multijunction Solar Cells with Finely-Tuned Quantum Wells

NASA Astrophysics Data System (ADS)

Varonides, Argyrios C.

The field of high efficiency (inorganic) photovoltaics (PV) is rapidly maturing in both efficiency goals and cover all cost reduction of fabrication. On one hand, know-how from space industry in new solar cell design configurations and on the other, fabrication cost reduction challenges for terrestrial uses of solar energy, have paved the way to a new generation of PV devices, capable of capturing most of the solar spectrum. For quite a while now, the goal of inorganic solar cell design has been the total (if possible) capture-absorption of the solar spectrum from a single solar cell, designed in such a way that a multiple of incident wavelengths could be simultaneously absorbed. Multi-absorption in device physics indicates parallel existence of different materials that absorb solar photons of different energies. Bulk solid state devices absorb at specific energy thresholds, depending on their respective energy gap (EG). More than one energy gaps would on principle offer new ways of photon absorption: if such a structure could be fabricated, two or more groups of photons could be absorbed simultaneously. The point became then what lattice-matched semiconductor materials could offer such multiple levels of absorption without much recombination losses. It was soon realized that such layer multiplicity combined with quantum size effects could lead to higher efficiency collection of photo-excited carriers. At the moment, the main reason that slows down quantum effect solar cell production is high fabrication cost, since it involves primarily expensive methods of multilayer growth. Existing multi-layer cells are fabricated in the bulk, with three (mostly) layers of lattice-matched and non-lattice-matched (pseudo-morphic) semiconductor materials (GaInP/InGaN etc), where photo-carrier collection occurs in the bulk of the base (coming from the emitter which lies right under the window layer). These carriers are given excess to conduction via tunnel junction (grown between at each interface and connecting the layers in series). This basic idea of a design has proven very successful in recent years, leading to solar cells of efficiency levels well above 30% (Fraunhofer Institute's multi-gap solar cell at 40.8%, and NREL's device at 40.2% respectively). Successful alloys have demonstrated high performance, such as InxGa1 - xP alloys (x (%) of gallium phosphide and (1 - x) (%) of indium phosphide). Other successful candidates, in current use and perpetual cell design consideration, are the lattice-matched GaAs/AlGaAs and InP/GaAs pairs or AlAs/GaAs/GaAs triple layers and alloys, which are heavily used in both solar and the electronics industry.

Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling.

PubMed

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2016-09-23

InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

Thin-Film Photovoltaic Solar Array Parametric Assessment

NASA Technical Reports Server (NTRS)

Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Jacobs, Mark K.; Ponnusamy, Deva

2000-01-01

This paper summarizes a study that had the objective to develop a model and parametrically determine the circumstances for which lightweight thin-film photovoltaic solar arrays would be more beneficial, in terms of mass and cost, than arrays using high-efficiency crystalline solar cells. Previous studies considering arrays with near-term thin-film technology for Earth orbiting applications are briefly reviewed. The present study uses a parametric approach that evaluated the performance of lightweight thin-film arrays with cell efficiencies ranging from 5 to 20 percent. The model developed for this study is described in some detail. Similar mass and cost trends for each array option were found across eight missions of various power levels in locations ranging from Venus to Jupiter. The results for one specific mission, a main belt asteroid tour, indicate that only moderate thin-film cell efficiency (approx. 12 percent) is necessary to match the mass of arrays using crystalline cells with much greater efficiency (35 percent multi-junction GaAs based and 20 percent thin-silicon). Regarding cost, a 12 percent efficient thin-film array is projected to cost about half is much as a 4-junction GaAs array. While efficiency improvements beyond 12 percent did not significantly further improve the mass and cost benefits for thin-film arrays, higher efficiency will be needed to mitigate the spacecraft-level impacts associated with large deployed array areas. A low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is briefly described. The paper concludes with the observation that with the characteristics assumed for this study, ultra-lightweight arrays using efficient, thin-film cells on flexible substrates may become a leading alternative for a wide variety of space missions.

High Performance Tandem Perovskite/Polymer Solar Cells

NASA Astrophysics Data System (ADS)

Liu, Yao; Bag, Monojit; Page, Zachariah; Renna, Lawrence; Kim, Paul; Choi, Jaewon; Emrick, Todd; Venkataraman, D.; Russell, Thomas

Combining perovskites with other inorganic materials, such as copper indium gallium diselenide (CIGS) or silicon, is enabling significant improvement in solar cell device performance. Here, we demonstrate a highly efficient hybrid tandem solar cell fabricated through a facile solution deposition approach to give a perovskite front sub-cell and a polymer:fullerene blend back sub-cell. This methodology eliminates the adverse effects of thermal annealing during perovskite fabrication on polymer solar cells. The record tandem solar cell efficiency of 15.96% is 40% greater than the corresponding perovskite-based single junction device and 65% greater than the polymer-based single junction device, while mitigating deleterious hysteresis effects often associated with perovskite solar cells. The hybrid tandem devices demonstrate the synergistic effects arising from the combination of perovskite and polymer-based materials for solar cells. This work was supported by the Department of Energy-supported Energy Frontier Research Center at the University of Massachusetts (DE-SC0001087). The authors acknowledge the W.M. Keck Electron Microscopy.

Enhanced conversion efficiency in wide-bandgap GaNP solar cells

DOE PAGES

Sukrittanon, Supanee; Liu, Ren; Ro, Yun Goo; ...

2015-10-12

In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, E g –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher thanmore » other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.« less

Strategic siting and regional grid interconnections key to low-carbon futures in African countries

PubMed Central

Deshmukh, Ranjit; Ndhlukula, Kudakwashe; Radojicic, Tijana; Reilly-Moman, Jessica; Phadke, Amol; Kammen, Daniel M.; Callaway, Duncan S.

2017-01-01

Recent forecasts suggest that African countries must triple their current electricity generation by 2030. Our multicriteria assessment of wind and solar potential for large regions of Africa shows how economically competitive and low-environmental–impact renewable resources can significantly contribute to meeting this demand. We created the Multicriteria Analysis for Planning Renewable Energy (MapRE) framework to map and characterize solar and wind energy zones in 21 countries in the Southern African Power Pool (SAPP) and the Eastern Africa Power Pool (EAPP) and find that potential is several times greater than demand in many countries. Significant fractions of demand can be quickly served with “no-regrets” options—or zones that are low-cost, low-environmental impact, and highly accessible. Because no-regrets options are spatially heterogeneous, international interconnections are necessary to help achieve low-carbon development for the region as a whole, and interconnections that support the best renewable options may differ from those planned for hydropower expansion. Additionally, interconnections and selecting wind sites to match demand reduce the need for SAPP-wide conventional generation capacity by 9.5% in a high-wind scenario, resulting in a 6–20% cost savings, depending on the avoided conventional technology. Strategic selection of low-impact and accessible zones is more cost effective with interconnections compared with solutions without interconnections. Overall results are robust to multiple load growth scenarios. Together, results show that multicriteria site selection and deliberate planning of interconnections may significantly increase the economic and environmental competitiveness of renewable alternatives relative to conventional generation. PMID:28348209

Strategic siting and regional grid interconnections key to low-carbon futures in African countries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Grace C.; Deshmukh, Ranjit; Ndhlukula, Kudakwashe

2017-03-27

Recent forecasts suggest that African countries must triple their current electricity generation by 2030. Our multicriteria assessment of wind and solar potential for large regions of Africa shows how economically competitive and low-environmental– impact renewable resources can significantly contribute to meeting this demand. We created the Multicriteria Analysis for Planning Renewable Energy (MapRE) framework to map and characterize solar and wind energy zones in 21 countries in the Southern African Power Pool (SAPP) and the Eastern Africa Power Pool (EAPP) and find that potential is several times greater than demand in many countries. Significant fractions of demand can be quicklymore » served with “no-regrets” options—or zones that are low-cost, low-environmental impact, and highly accessible. Because no-regrets options are spatially heterogeneous, international interconnections are necessary to help achieve low-carbon development for the region as a whole, and interconnections that support the best renewable options may differ from those planned for hydropower expansion. Additionally, interconnections and selecting wind sites to match demand reduce the need for SAPP-wide conventional generation capacity by 9.5% in a high-wind scenario, resulting in a 6–20% cost savings, depending on the avoided conventional technology. Strategic selection of low-impact and accessible zones is more cost effective with interconnections compared with solutions without interconnections. In conclusion, the overall results are robust to multiple load growth scenarios. Together, results show that multicriteria site selection and deliberate planning of interconnections may significantly increase the economic and environmental competitiveness of renewable alternatives relative to conventional generation.« less

Strategic siting and regional grid interconnections key to low-carbon futures in African countries.

PubMed

Wu, Grace C; Deshmukh, Ranjit; Ndhlukula, Kudakwashe; Radojicic, Tijana; Reilly-Moman, Jessica; Phadke, Amol; Kammen, Daniel M; Callaway, Duncan S

2017-04-11

Recent forecasts suggest that African countries must triple their current electricity generation by 2030. Our multicriteria assessment of wind and solar potential for large regions of Africa shows how economically competitive and low-environmental-impact renewable resources can significantly contribute to meeting this demand. We created the Multicriteria Analysis for Planning Renewable Energy (MapRE) framework to map and characterize solar and wind energy zones in 21 countries in the Southern African Power Pool (SAPP) and the Eastern Africa Power Pool (EAPP) and find that potential is several times greater than demand in many countries. Significant fractions of demand can be quickly served with "no-regrets" options-or zones that are low-cost, low-environmental impact, and highly accessible. Because no-regrets options are spatially heterogeneous, international interconnections are necessary to help achieve low-carbon development for the region as a whole, and interconnections that support the best renewable options may differ from those planned for hydropower expansion. Additionally, interconnections and selecting wind sites to match demand reduce the need for SAPP-wide conventional generation capacity by 9.5% in a high-wind scenario, resulting in a 6-20% cost savings, depending on the avoided conventional technology. Strategic selection of low-impact and accessible zones is more cost effective with interconnections compared with solutions without interconnections. Overall results are robust to multiple load growth scenarios. Together, results show that multicriteria site selection and deliberate planning of interconnections may significantly increase the economic and environmental competitiveness of renewable alternatives relative to conventional generation.

Status of Photovoltaic Calibration and Measurement Standards

NASA Technical Reports Server (NTRS)

Baraona, Cosmo; Bailey, Sheila; Curtis, Henry; Brinker, David; Jenkins, Phillip; Scheiman, David

2001-01-01

The 7th International Workshop on Space Solar Cell Calibration and Measurement was held on September 25-27, 2000 in Girdwood, Alaska. Representatives from eight countries discussed international standards for single and multijunction solar cell measurement and calibration methods, round robin intercomparisons, and irradiation test methods for space solar cells. Progress toward adoption of an ISO standard on single junction cells was made. Agreement was reached to begin work on new standards for multijunction cells and irradiation testing. Progress on present single junction round robin measurements was discussed and future multijunction round robins were planned. The next workshop will be held in Germany in October 2001.

Ion implantation of solar cell junctions without mass analysis

NASA Technical Reports Server (NTRS)

Fitzgerald, D.; Tonn, D. G.

1981-01-01

This paper is a summary of an investigation to determine the feasibility of producing solar cells by means of ion implantation without the use of mass analysis. Ion implants were performed using molecular and atomic phosphorus produced by the vaporization of solid red phosphorus and ionized in an electron bombardment source. Solar cell junctions were ion implanted by mass analysis of individual molecular species and by direct unanalyzed implants from the ion source. The implant dose ranged from 10 to the 14th to 10 to the 16th atoms/sq cm and the energy per implanted atom ranged from 5 KeV to 40 KeV in this study.

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

DOE PAGES

Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; ...

2015-03-24

With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm 2 2-terminal monolithic perovskite/silicon multijunction solar cell with a V OC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

Measurement of surface recombination velocity for silicon solar cells using a scanning electron microscope with pulsed beam

NASA Technical Reports Server (NTRS)

Daud, T.; Cheng, L. J.

1981-01-01

The role of surface recombination velocity in the design and fabrication of silicon solar cells is discussed. A scanning electron microscope with pulsed electron beam was used to measure this parameter of silicon surfaces. It is shown that the surface recombination velocity, s, increases by an order of magnitude when an etched surface degrades, probably as a result of environmental reaction. A textured front-surface-field cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem-junction cell shows an increasing s value. Electric fields at junction interfaces in front-surface-field and tandem-junction cells acting as minority carrier reflectors or sinks tend to alter the value of effective surface recombination velocity for different beam penetration depths. A range of values of s was calculated for different surfaces.

Designing an Electronics Data Package for Printed Circuit Boards (PCBs)

DTIC Science & Technology

2013-08-01

finished PCB flatness deviation should be less than 0.010 inches per inch. 4  The minimum copper wall thickness of plated-thru holes should be...Memory Card International Association)  IPC-6015 MCM-L (Multi-Chip Module – Laminated )  IPC-6016 HDI (High Density Interconnect)  IPC-6018...Interconnect ICT In Circuit Tester IPC Association Connecting Electronics Industries MCM-L Multi-Chip Module – Laminated MIL Military NEMA National

Fabrication and Doping Methods for Silicon Nano- and Micropillar Arrays for Solar-Cell Applications: A Review.

PubMed

Elbersen, Rick; Vijselaar, Wouter; Tiggelaar, Roald M; Gardeniers, Han; Huskens, Jurriaan

2015-11-18

Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High densities of such structures greatly enhance the light-absorbing properties of the device, whereas the 3D p/n junction geometry shortens the diffusion length of minority carriers and diminishes recombination. Due to the vast silicon nano- and microfabrication toolbox that exists nowadays, many versatile methods for the preparation of such highly structured samples are available. Furthermore, the formation of p/n junctions on structured surfaces is possible by a variety of doping techniques, in large part transferred from microelectronic circuit technology. The right choice of doping method, to achieve good control of junction depth and doping level, can contribute to an improvement of the overall efficiency that can be obtained in devices for energy applications. A review of the state-of-the-art of the fabrication and doping of silicon micro and nanopillars is presented here, as well as of the analysis of the properties and geometry of thus-formed 3D-structured p/n junctions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Offset truss hex solar concentrator

NASA Technical Reports Server (NTRS)

White, John E. (Inventor); Sturgis, James D. (Inventor); Erikson, Raymond J. (Inventor); Waligroski, Gregg A. (Inventor); Scott, Michael A. (Inventor)

1991-01-01

A solar energy concentrator system comprises an offset reflector structure made up of a plurality of solar energy reflector panel sections interconnected with one another to form a piecewise approximation of a portion of a (parabolic) surface of revolution rotated about a prescribed focal axis. Each panel section is comprised of a plurality of reflector facets whose reflective surfaces effectively focus reflected light to preselected surface portions of the interior sidewall of a cylindrically shaped solar energy receiver. The longitudinal axis of the receiver is tilted at an acute angle with respect to the optical axis such that the distribution of focussed solar energy over the interior surface of the solar engine is optimized for dynamic solar energy conversion. Each reflector panel section comprises a flat, hexagonally shaped truss support framework and a plurality of beam members interconnecting diametrically opposed corners of the hexagonal framework recessed within which a plurality of (spherically) contoured reflector facets is disposed. The depth of the framework and the beam members is greater than the thickness of a reflector facet such that a reflector facet may be tilted (for controlling the effective focus of its reflected light through the receiver aperture) without protruding from the panel section.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

NASA Astrophysics Data System (ADS)

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-01

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions.

PubMed

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-25

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Microfabrication of microsystem-enabled photovoltaic (MEPV) cells

NASA Astrophysics Data System (ADS)

Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose L.; Resnick, Paul J.; Wanlass, Mark W.; Clews, Peggy J.; Pluym, Tammy C.; Sanchez, Carlos A.; Gupta, Vipin P.

2011-02-01

Microsystem-Enabled Photovoltaic (MEPV) cells allow solar PV systems to take advantage of scaling benefits that occur as solar cells are reduced in size. We have developed MEPV cells that are 5 to 20 microns thick and down to 250 microns across. We have developed and demonstrated crystalline silicon (c-Si) cells with solar conversion efficiencies of 14.9%, and gallium arsenide (GaAs) cells with a conversion efficiency of 11.36%. In pursuing this work, we have identified over twenty scaling benefits that reduce PV system cost, improve performance, or allow new functionality. To create these cells, we have combined microfabrication techniques from various microsystem technologies. We have focused our development efforts on creating a process flow that uses standard equipment and standard wafer thicknesses, allows all high-temperature processing to be performed prior to release, and allows the remaining post-release wafer to be reprocessed and reused. The c-Si cell junctions are created using a backside point-contact PV cell process. The GaAs cells have an epitaxially grown junction. Despite the horizontal junction, these cells also are backside contacted. We provide recent developments and details for all steps of the process including junction creation, surface passivation, metallization, and release.

Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, C. S.; Li, Z. G.; Moutinho, H. R.

2012-06-01

We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. Wemore » found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several μm were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.« less

Berkeley Lab Sheds Light on Improving Solar Cell Efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lawrence Berkeley National Laboratory

2007-07-20

Typical manufacturing methods produce solar cells with an efficiency of 12-15%; and 14% efficiency is the bare minimum for achieving a profit. In work performed at the Ernest Orlando Lawrence Berkeley National Laboratory (Berkeley, CA, 5 10-486-577 1)--a US Department of Energy national laboratory that conducts unclassified scientific research and is managed by the University of California--scientist Scott McHugo has obtained keen insights into the impaired performance of solar cells manufactured from polycrystalline silicon. The solar cell market is potentially vast, according to Berkeley Lab. Lightweight solar panels are highly beneficial for providing electrical power to remote locations in developingmore » nations, since there is no need to build transmission lines or truck-in generator fuel. Moreover, industrial nations confronted with diminishing resources have active programs aimed at producing improved, less expensive solar cells. 'In a solar cell, there is a junction between p-type silicon and an n-type layer, such as diffused-in phosphorous', explained McHugo, who is now with Berkeley Lab's Accelerator and Fusion Research Division. 'When sunlight is absorbed, it frees electrons, which start migrating in a random-walk fashion toward that junction. If the electrons make it to the junction; they contribute to the cell's output of electric current. Often, however, before they reach the junction, they recombine at specific sites in the crystal' (and, therefore, cannot contribute to current output). McHugo scrutinized a map of a silicon wafer in which sites of high recombination appeared as dark regions. Previously, researchers had shown that such phenomena occurred not primarily at grain boundaries in the polycrystalline material, as might be expected, but more often at dislocations in the crystal. However, the dislocations themselves were not the problem. Using a unique heat treatment technique, McHugo performed electrical measurements to investigate the material at the dislocations. He was purportedly the first to show that they were 'decorated' with iron.« less

Design, fabrication, test, qualification, and price analysis of third generation design solar cell modules

NASA Technical Reports Server (NTRS)

1981-01-01

The fabrication of solar cell modules is detailed with emphasis upon laminating and interconnecting the panels that hold the simicrystalline silicon cells. Design problems and enviromental tests are described as well as performance characteristics.

Brain tumour cells interconnect to a functional and resistant network.

PubMed

Osswald, Matthias; Jung, Erik; Sahm, Felix; Solecki, Gergely; Venkataramani, Varun; Blaes, Jonas; Weil, Sophie; Horstmann, Heinz; Wiestler, Benedikt; Syed, Mustafa; Huang, Lulu; Ratliff, Miriam; Karimian Jazi, Kianush; Kurz, Felix T; Schmenger, Torsten; Lemke, Dieter; Gömmel, Miriam; Pauli, Martin; Liao, Yunxiang; Häring, Peter; Pusch, Stefan; Herl, Verena; Steinhäuser, Christian; Krunic, Damir; Jarahian, Mostafa; Miletic, Hrvoje; Berghoff, Anna S; Griesbeck, Oliver; Kalamakis, Georgios; Garaschuk, Olga; Preusser, Matthias; Weiss, Samuel; Liu, Haikun; Heiland, Sabine; Platten, Michael; Huber, Peter E; Kuner, Thomas; von Deimling, Andreas; Wick, Wolfgang; Winkler, Frank

2015-12-03

Astrocytic brain tumours, including glioblastomas, are incurable neoplasms characterized by diffusely infiltrative growth. Here we show that many tumour cells in astrocytomas extend ultra-long membrane protrusions, and use these distinct tumour microtubes as routes for brain invasion, proliferation, and to interconnect over long distances. The resulting network allows multicellular communication through microtube-associated gap junctions. When damage to the network occurred, tumour microtubes were used for repair. Moreover, the microtube-connected astrocytoma cells, but not those remaining unconnected throughout tumour progression, were protected from cell death inflicted by radiotherapy. The neuronal growth-associated protein 43 was important for microtube formation and function, and drove microtube-dependent tumour cell invasion, proliferation, interconnection, and radioresistance. Oligodendroglial brain tumours were deficient in this mechanism. In summary, astrocytomas can develop functional multicellular network structures. Disconnection of astrocytoma cells by targeting their tumour microtubes emerges as a new principle to reduce the treatment resistance of this disease.

Nanoprobe studies: Electrical transport in carbon nanotubes and crystal structure of aluminum nitride surfaces

NASA Astrophysics Data System (ADS)

Biswas, Sujit Kumar

Nanoprobes are an extraordinary set of experimental tools that allow fabrication, manipulation, and measurement in nano-scale systems. The primary use of a nanoprobe for imaging tiny objects is supplemented by powerful electrical techniques, namely scanning surface potential microscopy and current sensing atomic force microscopy. They allow us to measure potential, and current in carbon nanotube circuits. Nanoprobes are superior to conventional two- or four-probe measurements because they can provide spatial information of local electronic properties. This makes them highly attractive in studying junctions and contacts with carbon nanotubes. We have studied single-walled carbon nanotube circuits, forming junctions to other nanotubes. The experimental results indicate that these junctions act like potential barriers of about 50 meV that can confine electrons with an effective mass of 0.003 me , within nanotube channels of length 0.5 mum lying in-between two such potential barriers. This leads to quantization of the channel, forming a resonant tunneling structure. We have also found that single-walled nanotubes have phase coherence lengths of the order of 1 mum. This leads to situations where the electron interference effects at scattering centers need to be considered. We have seen direct evidence of this, in the non-linear resistance increase within nanotubes with few defects. Ambipolar transistor behavior was measured in a p-type single-walled nanotube circuit that showed electron injection across the Schottky junction at high positive bias. We have also studied multi-walled carbon nanotube circuits using scanning potential microscopy, and found that a back gate potential can vary the resistance of the channel. Vertical nanotube arrays, suitable for interconnects, were also measured. These hollow multi-walled nanotube channels were about 45 nm in diameter, and 50 mum in length, fabricated in an anodized alumina template. We found that these structures could sustain current densities greater than 105 A/cm2. Conventional use of nanoprobes in imaging aluminum nitride surfaces displayed curious step bunching structures. We have used an innovative analysis technique with which the bulk lattice constant of the crystal was measured to an accuracy of about 4% of X-ray crystallography value of 0.497 nm. In addition, this technique showed that there were regions on the surface that had a larger lattice parameter of 0.64 nm, which we interpreted to be due to a variation in the chemical composition of the surface such as oxide formation. We believe that this technique may prove useful as a study of chemical-composition variations on a surface as well as relaxation of the surface layer.

New Partnerships Help Utilities Break Down Solar Barriers | News | NREL

Science.gov Websites

local customers. Due to the small size of many member organizations and customer bases, some members face a challenge in accommodating customer requests to interconnect customer-sited solar photovoltaic supported the growth of customer-sited solar PV installations in recent years. In response to customer

Evaluating the Impact of the 2017 Solar Eclipse on U.S. Western Interconnection Operations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veda, Santosh; Zhang, Yingchen; Tan, Jin

With support from the U.S. Department of Energy (DOE) Solar Energy Technologies Office (SETO), the National Renewable Energy Laboratory (NREL) partnered with Peak Reliability to evaluate the impact of the August 21, 2017 total solar eclipse on the reliability and grid operations in the Western Electricity Coordinating Council (WECC) territory.

A theoretical analysis of the current-voltage characteristics of solar cells

NASA Technical Reports Server (NTRS)

Fang, R. C. Y.; Hauser, J. R.

1979-01-01

The following topics are discussed: (1) dark current-voltage characteristics of solar cells; (2) high efficiency silicon solar cells; (3) short circuit current density as a function of temperature and the radiation intensity; (4) Keldysh-Franz effects and silicon solar cells; (5) thin silicon solar cells; (6) optimum solar cell designs for concentrated sunlight; (7) nonuniform illumination effects of a solar cell; and (8) high-low junction emitter solar cells.

Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

NASA Astrophysics Data System (ADS)

Shen, Haoting

The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance was compared. A series of p-type c-Si wafers with varying resistivity/doping density were used for this study in order to evaluate the effect of carrier diffusion length on device performance. The saturation current densities (J0) of the radial junction devices were consistently larger than that of the planar devices as a result of the larger junction area. Despite the increased leakage currents, the radial junction HIT cells exhibited similar Voc compared to the planar cells. In addition, at high doping densities (5˜1018 cm-3), the J sc (16.7mA/cm2) and collection efficiency (6.3%) of the radial junction devices was higher than that of comparable planar cells (J sc 12.7 mA/cm2 and efficiency 5.2%), demonstrating improved collection of photogenerated carriers in this geometry.

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Ge nanopillar solar cells epitaxially grown by metalorganic chemical vapor deposition

PubMed Central

Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Park, Won-Kyu; Lee, Jaejin

2017-01-01

Radial junction solar cells with vertically aligned wire arrays have been widely studied to improve the power conversion efficiency. In this work, we report the first Ge nanopillar solar cell. Nanopillar arrays are selectively patterned on p-type Ge (100) substrates using nanosphere lithography and deep reactive ion etching processes. Nanoscale radial and planar junctions are realized by an n-type Ge emitter layer which is epitaxially grown by MOCVD using isobutylgermane. In situ epitaxial surface passivation is employed using an InGaP layer to avoid high surface recombination rates and Fermi level pinning. High quality n-ohmic contact is realized by protecting the top contact area during the nanopillar patterning. The short circuit current density and the power conversion efficiency of the Ge nanopillar solar cell are demonstrated to be improved up to 18 and 30%, respectively, compared to those of the Ge solar cell with a planar surface. PMID:28209964

Review of PREPA Technical Requirements for Interconnecting Wind and Solar Generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gevorgian, Vahan; Booth, Sarah

2013-11-01

The Puerto Rico Electric Power Authority developed the minimum technical requirements for interconnection of wind turbine generation and photovoltaic power plants. NREL has conducted a review of these requirements based on generic technical aspects and electrical characteristics of wind and photovoltaic power plants, and on existing requirements from other utilities (both U.S. and European).

Transient and Dynamic Stability Analysis | Grid Modernization | NREL

Science.gov Websites

are investigating the impact of high penetrations of wind and solar power on the frequency response ) Transient Stability and Frequency Response of the US Western Interconnection under Conditions of High Wind Subcontract Report (2013) Frequency Response of the US Eastern Interconnection under Condition of High Wind

Electrochemical Formation of a p-n Junction on Thin Film Silicon Deposited in Molten Salt.

PubMed

Zou, Xingli; Ji, Li; Yang, Xiao; Lim, Taeho; Yu, Edward T; Bard, Allen J

2017-11-15

Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior and photovoltaic effects, indicating promise for application in low-cost silicon thin film solar cells.

AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiong, Kanglin; Mi, Hongyi; Chang, Tzu-Hsuan

A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.

AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding

DOE PAGES

Xiong, Kanglin; Mi, Hongyi; Chang, Tzu-Hsuan; ...

2018-01-04

A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.

Non-native Co-, Mn-, and Ti-oxyhydroxide nanocrystals in ferritin for high efficiency solar energy conversion

NASA Astrophysics Data System (ADS)

Erickson, S. D.; Smith, T. J.; Moses, L. M.; Watt, R. K.; Colton, J. S.

2015-01-01

Quantum dot solar cells seek to surpass the solar energy conversion efficiencies achieved by bulk semiconductors. This new field requires a broad selection of materials to achieve its full potential. The 12 nm spherical protein ferritin can be used as a template for uniform and controlled nanocrystal growth, and to then house the nanocrystals for use in solar energy conversion. In this study, precise band gaps of titanium, cobalt, and manganese oxyhydroxide nanocrystals within ferritin were measured, and a change in band gap due to quantum confinement effects was observed. The range of band gaps obtainable from these three types of nanocrystals is 2.19-2.29 eV, 1.93-2.15 eV, and 1.60-1.65 eV respectively. From these measured band gaps, theoretical efficiency limits for a multi-junction solar cell using these ferritin-enclosed nanocrystals are calculated and found to be 38.0% for unconcentrated sunlight and 44.9% for maximally concentrated sunlight. If a ferritin-based nanocrystal with a band gap similar to silicon can be found (i.e. 1.12 eV), the theoretical efficiency limits are raised to 51.3% and 63.1%, respectively. For a current matched cell, these latter efficiencies become 41.6% (with an operating voltage of 5.49 V), and 50.0% (with an operating voltage of 6.59 V), for unconcentrated and maximally concentrated sunlight respectively.

Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

DOE PAGES

Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; ...

2012-11-26

Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10 -5 Ωcm, high electron mobility of 142 cm 2/Vs, and mean transmittance over 80% frommore » 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

Performance optimization of dense-array concentrator photovoltaic system considering effects of circumsolar radiation and slope error.

PubMed

Wong, Chee-Woon; Chong, Kok-Keong; Tan, Ming-Hui

2015-07-27

This paper presents an approach to optimize the electrical performance of dense-array concentrator photovoltaic system comprised of non-imaging dish concentrator by considering the circumsolar radiation and slope error effects. Based on the simulated flux distribution, a systematic methodology to optimize the layout configuration of solar cells interconnection circuit in dense array concentrator photovoltaic module has been proposed by minimizing the current mismatch caused by non-uniformity of concentrated sunlight. An optimized layout of interconnection solar cells circuit with minimum electrical power loss of 6.5% can be achieved by minimizing the effects of both circumsolar radiation and slope error.

Method for forming p-n junctions and solar-cells by laser-beam processing

DOEpatents

Narayan, Jagdish; Young, Rosa T.

1979-01-01

This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.

All solution-processed lead halide perovskite-BiVO4 tandem assembly for photolytic solar fuels production.

PubMed

Chen, Yong-Siou; Manser, Joseph S; Kamat, Prashant V

2015-01-21

The quest for economic, large-scale hydrogen production has motivated the search for new materials and device designs capable of splitting water using only energy from the sun. Here we introduce an all solution-processed tandem water splitting assembly composed of a BiVO4 photoanode and a single-junction CH3NH3PbI3 hybrid perovskite solar cell. This unique configuration allows efficient solar photon management, with the metal oxide photoanode selectively harvesting high energy visible photons, and the underlying perovskite solar cell capturing lower energy visible-near IR wavelengths in a single-pass excitation. Operating without external bias under standard AM 1.5G illumination, the photoanode-photovoltaic architecture, in conjunction with an earth-abundant cobalt phosphate catalyst, exhibits a solar-to-hydrogen conversion efficiency of 2.5% at neutral pH. The design of low-cost tandem water splitting assemblies employing single-junction hybrid perovskite materials establishes a potentially promising new frontier for solar water splitting research.

Effect of solar-cell junction geometry on open-circuit voltage

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Godlewski, M. P.

1985-01-01

Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essig, Stephanie; Geisz, John F.; Steiner, Myles A.

Dual-junction solar cells consisting of rear-heterojunction GaInP top cells and back-junction, back-contacted crystalline Si bottom cells were fabricated and characterized. Our calculations show that theoretical efficiencies up to 38.9% can be achieved with Si-based tandem devices. In our experiments, the two subcells were fabricated separately and stacked with an index matching fluid. In contrast to conventional mechanically stacked solar cells, that contain two metal grids at the interface, our concept includes a fully back contacted bottom cell which reduces the shadow losses in the device. A 1-sun AM1.5g cumulative efficiency of (26.2 +/- 0.6)% has been achieved with this novelmore » GaInP/Si 4-terminal tandem solar cell.« less

Computer modeling of a two-junction, monolithic cascade solar cell

NASA Technical Reports Server (NTRS)

Lamorte, M. F.; Abbott, D.

1979-01-01

The theory and design criteria for monolithic, two-junction cascade solar cells are described. The departure from the conventional solar cell analytical method and the reasons for using the integral form of the continuity equations are briefly discussed. The results of design optimization are presented. The energy conversion efficiency that is predicted for the optimized structure is greater than 30% at 300 K, AMO and one sun. The analytical method predicts device performance characteristics as a function of temperature. The range is restricted to 300 to 600 K. While the analysis is capable of determining most of the physical processes occurring in each of the individual layers, only the more significant device performance characteristics are presented.

Single-mode glass waveguide technology for optical interchip communication on board level

NASA Astrophysics Data System (ADS)

Brusberg, Lars; Neitz, Marcel; Schröder, Henning

2012-01-01

The large bandwidth demand in long-distance telecom networks lead to single-mode fiber interconnects as result of low dispersion, low loss and dense wavelength multiplexing possibilities. In contrast, multi-mode interconnects are suitable for much shorter lengths up to 300 meters and are promising for optical links between racks and on board level. Active optical cables based on multi-mode fiber links are at the market and research in multi-mode waveguide integration on board level is still going on. Compared to multi-mode, a single-mode waveguide has much more integration potential because of core diameters of around 20% of a multi-mode waveguide by a much larger bandwidth. But light coupling in single-mode waveguides is much more challenging because of lower coupling tolerances. Together with the silicon photonics technology, a single-mode waveguide technology on board-level will be the straight forward development goal for chip-to-chip optical interconnects integration. Such a hybrid packaging platform providing 3D optical single-mode links bridges the gap between novel photonic integrated circuits and the glass fiber based long-distance telecom networks. Following we introduce our 3D photonic packaging approach based on thin glass substrates with planar integrated optical single-mode waveguides for fiber-to-chip and chip-to-chip interconnects. This novel packaging approach merges micro-system packaging and glass integrated optics. It consists of a thin glass substrate with planar integrated singlemode waveguide circuits, optical mirrors and lenses providing an integration platform for photonic IC assembly and optical fiber interconnect. Thin glass is commercially available in panel and wafer formats and characterizes excellent optical and high-frequency properties. That makes it perfect for microsystem packaging. The paper presents recent results in single-mode waveguide technology on wafer level and waveguide characterization. Furthermore the integration in a hybrid packaging process and design issues are discussed.

Many-junction photovoltaic device performance under non-uniform high-concentration illumination

NASA Astrophysics Data System (ADS)

Valdivia, Christopher E.; Wilkins, Matthew M.; Chahal, Sanmeet S.; Proulx, Francine; Provost, Philippe-Olivier; Masson, Denis P.; Fafard, Simon; Hinzer, Karin

2017-09-01

A parameterized 3D distributed circuit model was developed to calculate the performance of III-V solar cells and photonic power converters (PPC) with a variable number of epitaxial vertically-stacked pn junctions. PPC devices are designed with many pn junctions to realize higher voltages and to operate under non-uniform illumination profiles from a laser or LED. Performance impacts of non-uniform illumination were greatly reduced with increasing number of junctions, with simulations comparing PPC devices with 3 to 20 junctions. Experimental results using Azastra Opto's 12- and 20-junction PPC illuminated by an 845 nm diode laser show high performance even with a small gap between the PPC and optical fiber output, until the local tunnel junction limit is reached.

Modular, Reconfigurable, High-Energy Systems Stepping Stones

NASA Technical Reports Server (NTRS)

Howell, Joe T.; Carrington, Connie K.; Mankins, John C.

2005-01-01

Modular, Reconfigurable, High-Energy Systems are Stepping Stones to provide capabilities for energy-rich infrastructure strategically located in space to support a variety of exploration scenarios. Abundant renewable energy at lunar or L1 locations could support propellant production and storage in refueling scenarios that enable affordable exploration. Renewable energy platforms in geosynchronous Earth orbits can collect and transmit power to satellites, or to Earth-surface locations. Energy-rich space technologies also enable the use of electric-powered propulsion systems that could efficiently deliver cargo and exploration facilities to remote locations. A first step to an energy-rich space infrastructure is a 100-kWe class solar-powered platform in Earth orbit. The platform would utilize advanced technologies in solar power collection and generation, power management and distribution, thermal management, and electric propulsion. It would also provide a power-rich free-flying platform to demonstrate in space a portfolio of technology flight experiments. This paper presents a preliminary design concept for a 100-kWe solar-powered satellite with the capability to flight-demonstrate a variety of payload experiments and to utilize electric propulsion. State-of-the-art solar concentrators, highly efficient multi-junction solar cells, integrated thermal management on the arrays, and innovative deployable structure design and packaging make the 100-kW satellite feasible for launch on one existing launch vehicle. Higher voltage arrays and power management and distribution (PMAD) systems reduce or eliminate the need for massive power converters, and could enable direct- drive of high-voltage solar electric thrusters.

A high specific power solar array for low to mid-power spacecraft

NASA Technical Reports Server (NTRS)

Jones, P. Alan; White, Stephen F.; Harvey, T. Jeffery; Smith, Brian S.

1993-01-01

UltraFlex is the generic term for a solar array system which delivers on-orbit power in the 400 to 6,000 watt per wing sizes with end-of-life specific power performance ranging to 150 watts-per-kilogram. Such performance is accomplished with off-the-shelf solar cells and state-of the-art materials and processes. Much of the recent work in photovoltaics is centered on advanced solar cell development. Successful as such work has been, no integrated solar array system has emerged which meets NASA's stated goals of 'increasing the end-of-life performance of space solar cells and arrays while minimizing their mass and cost.' This issue is addressed; namely, is there an array design that satisfies the usual requirements for space-rated hardware and that is inherently reliable, inexpensive, easily manufactured and simple, which can be used with both advanced cells currently in development and with inexpensive silicon cells? The answer is yes. The UltraFlex array described incorporates use of a blanket substrate which is thermally compatible with silicon and other materials typical of advanced multi-junction devices. The blanket materials are intrinsically insensitive to atomic oxygen degradation, are space rated, and are compatible with standard cell bonding processes. The deployment mechanism is simple and reliable and the structure is inherently stiff (high natural frequency). Mechanical vibration modes are also readily damped. The basic design is presented as well as supporting analysis and development tests.

A high specific power solar array for low to mid-power spacecraft

NASA Astrophysics Data System (ADS)

Jones, P. Alan; White, Stephen F.; Harvey, T. Jeffery; Smith, Brian S.

1993-05-01

UltraFlex is the generic term for a solar array system which delivers on-orbit power in the 400 to 6,000 watt per wing sizes with end-of-life specific power performance ranging to 150 watts-per-kilogram. Such performance is accomplished with off-the-shelf solar cells and state-of the-art materials and processes. Much of the recent work in photovoltaics is centered on advanced solar cell development. Successful as such work has been, no integrated solar array system has emerged which meets NASA's stated goals of 'increasing the end-of-life performance of space solar cells and arrays while minimizing their mass and cost.' This issue is addressed; namely, is there an array design that satisfies the usual requirements for space-rated hardware and that is inherently reliable, inexpensive, easily manufactured and simple, which can be used with both advanced cells currently in development and with inexpensive silicon cells? The answer is yes. The UltraFlex array described incorporates use of a blanket substrate which is thermally compatible with silicon and other materials typical of advanced multi-junction devices. The blanket materials are intrinsically insensitive to atomic oxygen degradation, are space rated, and are compatible with standard cell bonding processes. The deployment mechanism is simple and reliable and the structure is inherently stiff (high natural frequency). Mechanical vibration modes are also readily damped. The basic design is presented as well as supporting analysis and development tests.

Charge splitters and charge transport junctions based on guanine quadruplexes

NASA Astrophysics Data System (ADS)

Sha, Ruojie; Xiang, Limin; Liu, Chaoren; Balaeff, Alexander; Zhang, Yuqi; Zhang, Peng; Li, Yueqi; Beratan, David N.; Tao, Nongjian; Seeman, Nadrian C.

2018-04-01

Self-assembling circuit elements, such as current splitters or combiners at the molecular scale, require the design of building blocks with three or more terminals. A promising material for such building blocks is DNA, wherein multiple strands can self-assemble into multi-ended junctions, and nucleobase stacks can transport charge over long distances. However, nucleobase stacking is often disrupted at junction points, hindering electric charge transport between the two terminals of the junction. Here, we show that a guanine-quadruplex (G4) motif can be used as a connector element for a multi-ended DNA junction. By attaching specific terminal groups to the motif, we demonstrate that charges can enter the structure from one terminal at one end of a three-way G4 motif, and can exit from one of two terminals at the other end with minimal carrier transport attenuation. Moreover, we study four-way G4 junction structures by performing theoretical calculations to assist in the design and optimization of these connectors.

Assessment of distributed solar power systems: Issues and impacts

NASA Astrophysics Data System (ADS)

Moyle, R. A.; Chernoff, H.; Schweizer, T. C.; Patton, J. B.

1982-11-01

The installation of distributed solar-power systems presents electric utilities with a host of questions. Some of the technical and economic impacts of these systems are discussed. Among the technical interconnect issues are isolated operation, power quality, line safety, and metering options. Economic issues include user purchase criteria, structures and installation costs, marketing and product distribution costs, and interconnect costs. An interactive computer program that allows easy calculation of allowable system prices and allowable generation-equipment prices was developed as part of this project. It is concluded that the technical problems raised by distributed solar systems are surmountable, but their resolution may be costly. The stringent purchase criteria likely to be imposed by many potential system users and the economies of large-scale systems make small systems (less than 10 to 20 kW) less attractive than larger systems. Utilities that consider life-cycle costs in making investment decisions and third-party investors who have tax and financial advantages are likely to place the highest value on solar-power systems.

Dye-sensitized photoelectrochemical water oxidation through a buried junction.

PubMed

Xu, Pengtao; Huang, Tian; Huang, Jianbin; Yan, Yun; Mallouk, Thomas E

2018-06-18

Water oxidation has long been a challenge in artificial photosynthetic devices that convert solar energy into fuels. Water-splitting dye-sensitized photoelectrochemical cells (WS-DSPECs) provide a modular approach for integrating light-harvesting molecules with water-oxidation catalysts on metal-oxide electrodes. Despite recent progress in improving the efficiency of these devices by introducing good molecular water-oxidation catalysts, WS-DSPECs have poor stability, owing to the oxidation of molecular components at very positive electrode potentials. Here we demonstrate that a solid-state dye-sensitized solar cell (ss-DSSC) can be used as a buried junction for stable photoelectrochemical water splitting. A thin protecting layer of TiO 2 grown by atomic layer deposition (ALD) stabilizes the operation of the photoanode in aqueous solution, although as a solar cell there is a performance loss due to increased series resistance after the coating. With an electrodeposited iridium oxide layer, a photocurrent density of 1.43 mA cm -2 was observed in 0.1 M pH 6.7 phosphate solution at 1.23 V versus reversible hydrogen electrode, with good stability over 1 h. We measured an incident photon-to-current efficiency of 22% at 540 nm and a Faradaic efficiency of 43% for oxygen evolution. While the potential profile of the catalyst layer suggested otherwise, we confirmed the formation of a buried junction in the as-prepared photoelectrode. The buried junction design of ss-DSSs adds to our understanding of semiconductor-electrocatalyst junction behaviors in the presence of a poor semiconducting material.

76 FR 61749 - SpectraWatt, Inc. Including On-Site Leased Workers From Kelly Services Hopewell Junction, NY...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-10-05

... to the production of solar cells for their application in solar panels. The worker group includes on..., during the period of investigation, imports of articles like or directly competitive with solar cells produced by the subject firm have increased, and that the increased imports of solar cells (or like or...

Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

DTIC Science & Technology

2007-06-01

models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

Method for fabricating silicon cells

DOEpatents

Ruby, Douglas S.; Basore, Paul A.; Schubert, W. Kent

1998-08-11

A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

Development of Low Cost, High Energy-Per-Unit-Area Solar Cell Modules

NASA Technical Reports Server (NTRS)

Jones, G. T.; Chitre, S.

1977-01-01

Work on the development of low cost, high energy per unit area solar cell modules was conducted. Hexagonal solar cell and module efficiencies, module packing ratio, and solar cell design calculations were made. The cell grid structure and interconnection pattern was designed and the module substrates were fabricated for the three modules to be used. It was demonstrated that surface macrostructures significantly improve cell power output and photovoltaic energy conversion efficiency.

Present Status and Future Prospects of Silicon Thin-Film Solar Cells

NASA Astrophysics Data System (ADS)

Konagai, Makoto

2011-03-01

In this report, an overview of the recent status of photovoltaic (PV) power generation is first presented from the viewpoint of reducing CO2 emission. Next, the Japanese roadmap for the research and development (R&D) of PV power generation and the progress in the development of various solar cells are explained. In addition, the present status and future prospects of amorphous silicon (a-Si) thin-film solar cells, which are expected to enter the stage of full-scale practical application in the near future, are described. For a-Si single-junction solar cells, the conversion efficiency of their large-area modules has now reached 6-8%, and their practical application to megawatt solar systems has started. Meanwhile, the focus of R&D has been shifting to a-Si and microcrystalline silicon (µc-Si) tandem solar cells. Thus far, a-Si/µc-Si tandem solar cell modules with conversion efficiency exceeding 13% have been reported. In addition, triple-junction solar cells, whose target year for practical application is 2025 or later, are introduced, as well as innovative thin-film full-spectrum solar cells, whose target year of realization is 2050.

Helios: Understanding Solar Evolution Through Text Analytics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Randazzese, Lucien

This proof-of-concept project focused on developing, testing, and validating a range of bibliometric, text analytic, and machine-learning based methods to explore the evolution of three photovoltaic (PV) technologies: Cadmium Telluride (CdTe), Dye-Sensitized solar cells (DSSC), and Multi-junction solar cells. The analytical approach to the work was inspired by previous work by the same team to measure and predict the scientific prominence of terms and entities within specific research domains. The goal was to create tools that could assist domain-knowledgeable analysts in investigating the history and path of technological developments in general, with a focus on analyzing step-function changes in performance,more » or “breakthroughs,” in particular. The text-analytics platform developed during this project was dubbed Helios. The project relied on computational methods for analyzing large corpora of technical documents. For this project we ingested technical documents from the following sources into Helios: Thomson Scientific Web of Science (papers), the U.S. Patent & Trademark Office (patents), the U.S. Department of Energy (technical documents), the U.S. National Science Foundation (project funding summaries), and a hand curated set of full-text documents from Thomson Scientific and other sources.« less

Achieving 15% Tandem Polymer Solar Cells

DTIC Science & Technology

2015-06-23

solar cell structures – both polymer only and hybrid tandem cells to constantly pushing the envelope of solution processed solar cell ...performance – 11.6% polymer tandem cell , 7% transparent tandem polymer cell , and over 10% PCE hybrid tandem solar cells were achieved. In addition, AFOSR’s...final support also enabled us to explore novel hybrid perovskite solar cells in depth. For example, single junction cell efficiency

77 FR 36532 - Review of Small Generator Interconnection Agreements and Procedures; Solar Energy Industries...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-19

...; ER12-502-001; ER12-502-002; ER12- 1177-001; ER12-1855-000] Review of Small Generator Interconnection... Commission, 888 First Street NE., Washington, DC 20426. Members of the Commission may attend the conference... register at the following Web page: https://www.ferc.gov/whats-new/registration/small-generator-7-17-12...

Environmental testing of block 3 solar cell modules. Part 1: Qualification testing of standard production modules

NASA Technical Reports Server (NTRS)

Griffith, J. S.

1979-01-01

Qualification tests of solar cell modules are described. These modules continue to show improvement over earlier type modules tested. Cell cracking and delamination are less prevalent, and interconnect problems and electrical degradation from environmental testing are now rare.

West Virginia | Solar Research | NREL

Science.gov Websites

Incentive Programs West Virginia currently does not have any statewide financial incentives for midmarket solar. Utility Incentive Programs Check with local utility for utility incentive programs. Resources The utility policies and incentive programs. Net Metering and Interconnection West Virginia Public Service

Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

1987-01-01

Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

Silicon solar cell fabrication technology

NASA Technical Reports Server (NTRS)

Stafsudd, O. M.

1979-01-01

The laser cell scanner was used to characterize a number of solar cells made in various materials. An electron beam-induced current (EBIC) study was performed using a stereoscan scanning electron microscope. Planar p-n junctions were analyzed. A theory for the EBIC based on the analytical solution of the ambipolar diffusion equation under the influence of electron beam excitation parameter z (which is related to beam penetration), the junction depth Z sub j, the beam current and the surface recombination, was formulated and tested. The effect of a grain boundary was studied.

Excess junction current of silicon solar cells

NASA Technical Reports Server (NTRS)

Wang, E. Y.; Legge, R. N.; Christidis, N.

1973-01-01

The current-voltage characteristics of n(plus)-p silicon solar cells with 0.1, 1.0, 2.0, and 10 ohm-cm p-type base materials have been examined in detail. In addition to the usual I-V measurements, we have studied the temperature dependence of the slope of the I-V curve at the origin by the lock-in technique. The excess junction current coefficient (Iq) deduced from the slope at the origin depends on the square root of the intrinsic carrier concentration. The Iq obtained from the I-V curve fitting over the entire forward bias region at various temperatures shows the same temperature dependence. This result, in addition to the presence of an aging effect, suggest that the surface channel effect is the dominant cause of the excess junction current.

Method for fabricating silicon cells

DOEpatents

Ruby, D.S.; Basore, P.A.; Schubert, W.K.

1998-08-11

A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

Silicon-fiber blanket solar-cell array concept

NASA Technical Reports Server (NTRS)

Eliason, J. T.

1973-01-01

Proposed economical manufacture of solar-cell arrays involves parallel, planar weaving of filaments made of doped silicon fibers with diffused radial junction. Each filament is a solar cell connected either in series or parallel with others to form a blanket of deposited grids or attached electrode wire mesh screens.

Thermodynamic and achievable efficiencies for solar-driven electrochemical reduction of carbon dioxide to transportation fuels.

PubMed

Singh, Meenesh R; Clark, Ezra L; Bell, Alexis T

2015-11-10

Thermodynamic, achievable, and realistic efficiency limits of solar-driven electrochemical conversion of water and carbon dioxide to fuels are investigated as functions of light-absorber composition and configuration, and catalyst composition. The maximum thermodynamic efficiency at 1-sun illumination for adiabatic electrochemical synthesis of various solar fuels is in the range of 32-42%. Single-, double-, and triple-junction light absorbers are found to be optimal for electrochemical load ranges of 0-0.9 V, 0.9-1.95 V, and 1.95-3.5 V, respectively. Achievable solar-to-fuel (STF) efficiencies are determined using ideal double- and triple-junction light absorbers and the electrochemical load curves for CO2 reduction on silver and copper cathodes, and water oxidation kinetics over iridium oxide. The maximum achievable STF efficiencies for synthesis gas (H2 and CO) and Hythane (H2 and CH4) are 18.4% and 20.3%, respectively. Whereas the realistic STF efficiency of photoelectrochemical cells (PECs) can be as low as 0.8%, tandem PECs and photovoltaic (PV)-electrolyzers can operate at 7.2% under identical operating conditions. We show that the composition and energy content of solar fuels can also be adjusted by tuning the band-gaps of triple-junction light absorbers and/or the ratio of catalyst-to-PV area, and that the synthesis of liquid products and C2H4 have high profitability indices.