Effect of interfacial disorder on exchange anisotropy in nickel manganese/nickel epitaxial bilayers

NASA Astrophysics Data System (ADS)

Lund, Michael Shane

In this thesis, the influence of interdiffusion on the structural and magnetic properties of epitaxial Ni1-xMnx/Ni bilayers has been examined. Structural characterization shows (111) oriented epitaxial layers with a 35A interdiffused layer at the Ni47Mn 53/Ni interface. This interdiffused layer is a result of the annealing step (250 C anneal for 16 hours) that is typically needed to transform NiMn into the required antiferromagnetic (AF) phase. A comparison of polarized neutron reflectometry measurements at 300 K and at 10 K show two major features as the temperature is decreased; (i) The ferromagnetic (F) moment of the sample appears to decrease with decreasing temperature, and (ii) The F layer is effectively thinner at low temperatures, i.e. the magnetic interface between the F and underlying non-F layer has a temperature dependent location. These unexpected results are confirmed by measurements of the temperature dependence of the magnetization after cooling in a demagnetized state, then applying an external field while measuring the magnetization. The magnetization decreases with decreasing temperature, consistent with a decrease in the effective F layer thickness. The effective "motion" of the magnetic interface is explained by the increasing dominance of the AF exchange interactions in the interdiffused region as the temperature is lowered. This model is further supported by the existence of memory effects and glassy behavior, which are both consistent with competing AF and F interactions in the interdiffused region. Furthermore, this interdiffusion at the AF/F interface provides a unique opportunity to assess, in a single sample, the effect of uniaxial vs. biaxial anisotropy on phenomena such as training and reversal asymmetry. As predicted by recent theory it is shown that the existence of a strong training effect, and an accompanying reversal asymmetry, can be directly correlated with the presence of biaxial exchange induced anisotropy. Finally, the dependence of exchange bias on x in Ni1-xMnx/Ni bilayers has been studied. It is found that bilayers with x ˜ 0.58 have a maximum exchange coupling and that the maximum exchange bias is achieved with just a 2 hour anneal at 250 C. This is striking and suggests that the as-deposited Ni 1-xMnx is in the AF phase. Additionally, inverted unannealed bilayers exhibit exchange bias, providing clear evidence for spontaneous magnetic ordering of Ni1-xMnx layer. This is an important find since annealing results in interdiffusion at the AF/F interface, and a subsequent reduction in the exchange bias field, it would be technologically desirable to omit this step entirely.

Coating with overlay metallic-cermet alloy systems

NASA Technical Reports Server (NTRS)

Gedwill, M. A.; Levine, S. R.; Glasgow, T. K. (Inventor)

1984-01-01

A base layer of an oxide dispersed, metallic alloy (cermet) is arc plasma sprayed onto a substrate, such as a turbine blade, vane, or the like, which is subjected to high temperature use. A top layer of an oxidation, hot corrosion, erosion resistant alloy of nickel, cobalt, or iron is then arc plasma sprayed onto the base layer. A heat treatment is used to improve the bonding. The base layer serves as an inhibitor to interdiffusion between the protective top layer and the substrate. Otherwise, the 10 protective top layer would rapidly interact detrimentally with the substrate and degrade by spalling of the protective oxides formed on the outer surface at elevated temperatures.

Au/Ti resistors used for Nb/Pb-alloy Josephson junctions. II. Thermal stability

NASA Astrophysics Data System (ADS)

Murakami, Masanori; Kim, K. K.

1984-10-01

In the preceding paper bilayered Au/Ti resistors were found to have excellent electrical stability during storage at room temperature after preannealing at an elevated temperature, which is essential to design logic and memory circuits of Nb/Pb-alloy Josephson junction devices. The resistors could contact directly with the Pb-alloy control lines in which Pb and In atoms which are known to intermix easily with Au atoms are contained. Since Pb and In atoms in the control lines are separated from Au atoms of the resistors by thin Ti layers, thermal stability at the contacts is a major concern for use of the Au/Ti resistor material in the Josephson devices. In the present study, surface morphology change and diffusion mechanism at the resistor/control-line contacts were studied using x-ray diffraction and scanning electron microscopy for square-shaped Au/Ti resistors covered by Pb-In layers. The samples were isothermally annealed at temperatures ranging from 353 to 423 K. The diffusion did not occur immediately after annealing at these temperatures. After the incubation period, the interdiffusion was observed to initiate at the edges of the resistors facing to the center of the cathode. Significant amounts of the In atoms in the Pb-In layers were observed to diffuse into the Au layers of the resistors, forming AuIn2 compounds under the Ti layers. By measuring growth rates of the AuIn2 layers, the diffusion coefficients and the activation energy for the layer growth were determined. Also, by analyzing changes in the In concentration in the Pb-In layers during annealing, interdiffusion coefficients of In atoms in the Pb-In layers were determined using a computer simulation technique. The activation energy was about 1.1 eV. Since these diffusion coefficients were found to be very close to those determined previously in bulk materials, the diffusion kinetics is believed to be controlled by the lattice diffusion. Based on the present results, several methods to reduce the interdiffusion between Pb-alloy and Au/Ti resistors were proposed.

Hydrogen speciation in hydrated layers on nuclear waste glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aines, R.D.; Weed, H.C.; Bates, J.K.

1987-01-15

The hydration of an outer layer on nuclear waste glasses is known to occur during leaching, but the actual speciation of hydrogen (as water or hydroxyl groups) in these layers has not been determined. As part of the Nevada Nuclear Waste Storage Investigations Project, we have used infrared spectroscopy to determine hydrogen speciations in three nuclear waste glass compositions (SRL-131 & 165, and PNL 76-68), which were leached at 90{sup 0}C (all glasses) or hydrated in a vapor-saturated atmosphere at 202{sup 0}C (SRL-131 only). Hydroxyl groups were found in the surface layers of all the glasses. Molecular water was foundmore » in the surface of SRL-131 and PNL 76-68 glasses that had been leached for several months in deionized water, and in the vapor-hydrated sample. The water/hydroxyl ratio increases with increasing reaction time; molecular water makes up most of the hydrogen in the thick reaction layers on vapor-phase hydrated glass while only hydroxyl occurs in the least reacted samples. Using the known molar absorptivities of water and hydroxyl in silica-rich glass the vapor-phase layer contained 4.8 moles/liter of molecular water, and 0.6 moles water in the form hydroxyl. A 15 {mu}m layer on SRL-131 glass formed by leaching at 90{sup 0}C contained a total of 4.9 moles/liter of water, 2/3 of which was as hydroxyl. The unreacted bulk glass contains about 0.018 moles/liter water, all as hydroxyl. The amount of hydrogen added to the SRL-131 glass was about 70% of the original Na + Li content, not the 300% that would result from alkali=hydronium ion interdiffusion. If all the hydrogen is then assumed to be added as the result of alkali-H{sup +} interdiffusion, the molecular water observed may have formed from condensation of the original hydroxyl groups.« less

Polymer Disentanglement during 3D Printing

NASA Astrophysics Data System (ADS)

McIlroy, Claire; Olmsted, Peter D.

Although 3D printing has the potential to transform manufacturing processes, improving the strength of printed parts to rival that of traditionally-manufactured parts remains an underlying issue. The most common method, fused filament fabrication (FFF), involves melting a thermoplastic, followed by layer-by-layer filament extrusion to fabricate a 3D object. The key to ensuring strength at the weld between layers is successful inter-diffusion and re-entanglement of the melt across the interface. Under typical printing conditions the melt experiences high strain rates within the nozzle, which can significantly stretch and orient the polymers. Consequently, inter-diffusion does not occur from an equilibrium state. The printed layer also cools towards the glass transition, which limits inter-diffusion time. We employ a continuum polymer model (Rolie-Poly) that incorporates flow-induced changes in the entanglement density to predict how an amorphous polymer melt is deformed during FFF. The deformation is dominated by the deposition process, which involves a 90 degree turn and transformation from circular to elliptical geometry. Polymers become highly stretched and aligned with the flow direction, which significantly disentangles the melt via convective constraint release.

Effect of La2O3 addition on interface chemistry between 4YSZ top layer and Ni based alloy bond coat in thermal barrier coating by EB PVD.

PubMed

Park, Chan-Young; Yang, Young-Hwan; Kim, Seong-Won; Lee, Sung-Min; Kim, Hyung-Tae; Jang, Byung-Koog; Lim, Dae-Soon; Oh, Yoon-Suk

2014-11-01

The effect of a 5 mol% La2O3 addition on the forming behavior and compositional variation at interface between a 4 mol% Yttria (Y2O3) stabilized ZrO2 (4YSZ) top coat and bond coat (NiCrAlY) as a thermal barrier coating (TBC) has been investigated. Top coats were deposited by electron beam physical vapor deposition (EB PVD) onto a super alloy (Ni-Cr-Co-Al) substrate without pre-oxidation of the bond coat. Top coats are found to consist of dense columnar grains with a thin interdiffusion layer between metallic bond coats. In the as-received 4YSZ coating, a thin interdiffusion zone at the interface between the top and bond coats was found to consist of a Ni-Zr intermetallic compound with a reduced quantity of Y, Al or O elements. On the other hand, in the case of an interdiffusion area of 5 mol% La2O3-added 4YSZ coating, it was found that the complicated composition and structure with La-added YSZ and Ni-Al rich compounds separately. The thermal conductivity of 5 mol% La2O3-added 4YSZ coating (- 1.6 W/m x k at 1100 degrees C) was lower than a 4YSZ coating (- 3.2 W/m x k at 1100 degrees C) alone.

Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Namkoong, Gon; Trybus, Elaissa; Cheung, Maurice C.; Doolittle, W. Alan; Cartwright, Alexander N.; Ferguson, Ian; Seong, Tae-Yeon; Nause, Jeff

2010-02-01

We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.

Method for forming nuclear fuel containers of a composite construction and the product thereof

DOEpatents

Cheng, Bo-Ching; Rosenbaum, Herman S.; Armijo, Joseph S.

1984-01-01

An improved method for producing nuclear fuel containers of a composite construction having components providing therein a barrier system for resisting destructive action by volatile fission products or impurities and also interdiffusion of metal constituents, and the product thereof. The composite nuclear fuel containers of the method comprise a casing of zirconium or alloy thereof with a layer of copper overlying an oxidized surface portion of the zirconium or alloy thereof.

Effects of supercritical carbon dioxide on immobile bound polymer chains on solid substrates

NASA Astrophysics Data System (ADS)

Sen, Mani; Asada, Mitsunori; Jiang, Naisheng; Endoh, Maya K.; Akgun, Bulent; Satija, Sushil; Koga, Tadanori

2013-03-01

Adsorbed polymer layers formed on flat solid substrates have recently been the subject of extensive studies because it is postulated to control the dynamics of technologically relevant polymer thin films, for example, in lithography. Such adsorbed layers have been reported to hinder the mobility of polymer chains in thin films even at a large length scale. Consequently, this bound layer remains immobile regardless of processing techniques (i.e. thermal annealing, solvent dissolution, etc). Here, we investigate the use of supercritical carbon dioxide (scCO2) as a novel plasticizer for bound polystyrene layers formed on silicon substrates. In-situ swelling and interdiffusion experiments using neutron reflectivity were performed. As a result, we found the anomalous plasticization effects of scCO2 on the bound polymer layers near the critical point where the anomalous adsorption of CO2 molecules in polymer thin films has been reported previously. Acknowledgement: We acknowledge the financial support from NSF Grant No. CMMI-084626.

A study of interdiffusion in beta + gamma/gamma + gamma prime Ni-Cr-Al. M.S. Thesis. Final Report

NASA Technical Reports Server (NTRS)

Carol, L. A.

1985-01-01

Ternary diffusion in the NiCrAl system at 1200 C was studied with beta + gamma/gamma + gamma prime infinite diffusion couples. Interdiffusion resulted in the formation of complex, multiphase diffusion zones. Concentration/distance profiles for Cr and Al in the phases present in the diffusion zone were measured after 200 hr. The Ni-rich portion of the NiCrAl phase diagram (1200 C) was also determined. From these data, bulk Cr and Al profiles were calculated and translated to diffusion paths on the ternary isotherm. Growth layer kinetics of the layers present in the diffusion zone were also measured.

A modelling study of the inter-diffusion layer formation in U-Mo/Al dispersion fuel plates at high power

NASA Astrophysics Data System (ADS)

Ye, B.; Hofman, G. L.; Leenaers, A.; Bergeron, A.; Kuzminov, V.; Van den Berghe, S.; Kim, Y. S.; Wallin, H.

2018-02-01

Post irradiation examinations of full-size U-Mo/Al dispersion fuel plates fabricated with ZrN- or Si- coated U-Mo particles revealed that the reaction rate of irradiation-induced U-Mo-Al inter-diffusion, an important microstructural change impacting the performance of this type of fuel, transited at a threshold temperature/fission rate. The existing inter-diffusion layer (IL) growth correlation, which does not describe the transition behavior of IL growth, was modified by applying a temperature-dependent multiplication factor that transits around a threshold fission rate. In-pile irradiation data from four tests in the BR2 reactors, including FUTURE, E-FUTURE, SELEMIUM, and SELEMIUM-1a, were utilized to determine and validate the updated IL growth correlation. Irradiation behavior of the plates was simulated with the DART-2D computational code. The general agreement between the calculated and measured fuel meat swelling and constituent volume fractions as a function of fission density demonstrated the plausibility of the updated IL growth correlation. The simulation results also suggested the temperature dependence of the IL growth rate, similar to the temperature dependence of the inter-mixing rate in ion-irradiated bi-layer systems.

Low-temperature interface reactions in layered Au/Sb films: In situ investigation of the formation of an amorphous phase

NASA Astrophysics Data System (ADS)

Boyen, H.-G.; Cossy-Favre, A.; Oelhafen, P.; Siber, A.; Ziemann, P.; Lauinger, C.; Moser, T.; Häussler, P.; Baumann, F.

1995-01-01

Photoelectron-spectroscopy methods combined with electrical-resistance measurements were employed to study the effects of intermixing at Au/Sb interfaces at low temperatures. For the purpose of characterizing the growth processes of the intermixed phase on a ML scale, Au/Sb bilayers (layer thicknesses DAu=0.5-75 ML and DSb=150 ML) were evaporated at 77 K and the different in situ techniques allowed a comparison to vapor-quenched amorphous AuxSb100-x alloys. For Au thicknesses between 0.5 and 0.9 ML, a change from a semiconducting to a metallic behavior of the samples has been detected, as indicated by the development of a steplike photoelectron intensity at the Fermi level. Evidence has been found that for Au coverages <= 6 ML chemical reactions at the Au/Sb interface occur, leading to the formation of a homogeneously intermixed amorphous layer with a maximum thickness of about 2.3 nm and Au concentrations as high as x~=80 at. %. This latter value corresponds to the limiting Au content where amorphous alloys can be prepared at low temperature (0 at. % <=x<= 80 at. %). For nominal coverages beyond 6 ML polycrystalline Au films were formed. Consequently, Au/Sb multilayers with sufficiently small modulation lengths, which were prepared at 130 K by ion-beam sputtering, were observed to grow as a homogeneous amorphous phase over a broad range of compositions, as evidenced by in situ resistance measurements and by comparing the obtained crystallization temperatures to those of vapor-quenched amorphous alloys. Variation of the deposition temperature Ts revealed that an amorphous interface layer is only formed for Ts<= 220 K. This is consistent with the fact that for multilayers with large modulation lengths containing unreacted polycrystalline Au and Sb layers, long-range interdiffusion is found to set in at temperatures above 230 K. This interdiffusion, however, results in the formation of polycrystalline Au-Sb alloys.

Interdiffusion behavior of U3Si2 with FeCrAl via diffusion couple studies

NASA Astrophysics Data System (ADS)

Hoggan, Rita E.; He, Lingfeng; Harp, Jason M.

2018-04-01

Uranium silicide (U3Si2) is a candidate to replace uranium oxide (UO2) as light water reactor (LWR) fuel because of its higher thermal conductivity and higher fissile density relative to the current standard, UO2. A class of Fe, Cr, Al alloys collectively known as FeCrAl alloys that have superior mechanical and oxidation resistance are being considered as an alternative to the standard Zirconium based LWR cladding. The interdiffusion behavior between FeCrAl and U3Si2 is investigated in this study. Commercially available FeCrAl, along with U3Si2 pellets were placed in diffusion couples. Individual tests were ran at temperatures ranging from 500 °C to 1000 °C for 30 h and 100 h. The interdiffusion was analyzed with an optical microscope, scanning electron microscope, and transmission electron microscope. Uniform and planar interdiffusion layers along the material interface were illustrated with backscatter electron micrographs and energy-dispersive X-ray spectroscopy. Electron diffraction was used to validate phases present in the system, including distinct U2Fe3Si/UFe2 and UFeSi layers at the material interface. U and Fe diffused far into the FeCrAl and U3Si2 matrix, respectively, in the higher temperature tests. No interaction was observed at 500 °C for 30 h.

A modelling study of the inter-diffusion layer formation in U-Mo/Al dispersion fuel plates at high power

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, B.; Hofman, G. L.; Leenaers, A.

Post irradiation examinations of full-size U-Mo/Al dispersion fuel plates fabricated with ZrN- or Sicoated U-Mo particles revealed that the reaction rate of irradiation-induced U-Mo-Al inter-diffusion, an important microstructural change impacting the performance of this type of fuel, is temperature and fission-rate dependent. In order to simulate the U-Mo/Al inter-diffusion layer (IL) growth behavior in full-size dispersion fuel plates, the existing IL growth correlation was modified with a temperaturedependent multiplication factor that transits around a threshold fission rate. In-pile irradiation data from four tests in the BR2 reactors, including FUTURE, E-FUTURE, SELEMIUM, and SELEMIUM-1a, were utilized to determine and validate themore » updated IL growth correlation. Irradiation behavior of the plates was simulated with the DART-2D computational code. The general agreement between the calculated and measured fuel meat swelling and constituent volume fractions as a function of fission density demonstrated the plausibility of the updated IL growth correlation. The simulation results also suggested the temperature dependence of the IL growth rate, similar to the temperature dependence of the intermixing rate in ion-irradiated bi-layer systems.« less

Atom-Probe Tomography, TEM and ToF-SIMS study of borosilicate glass alteration rim: A multiscale approach to investigating rate-limiting mechanisms

NASA Astrophysics Data System (ADS)

Gin, S.; Jollivet, P.; Barba Rossa, G.; Tribet, M.; Mougnaud, S.; Collin, M.; Fournier, M.; Cadel, E.; Cabie, M.; Dupuy, L.

2017-04-01

Significant efforts have been made into understanding the dissolution of silicate glasses and minerals, but there is still debate about the formation processes and the properties of surface layers. Here, we investigate glass coupons of ISG glass - a 6 oxide borosilicate glass of nuclear interest - altered at 90 °C in conditions close to saturation and for durations ranging from 1 to 875 days. Altered glass coupons were characterized from atomic to macroscopic levels to better understand how surface layers become protective. With this approach, it was shown that a rough interface, whose physical characteristics have been modeled, formed in a few days and then propagated into the pristine material at a rate controlled by the reactive transport of water within the growing alteration layer. Several observations such as stiff interfacial B, Na, and Ca profiles and damped profiles within the rest of the alteration layer are not consistent with the classical inter-diffusion model, or with the interfacial dissolution-precipitation model. A new paradigm is proposed to explain these features. Inter-diffusion, a process based on water ingress into the glass and ion-exchange, may only explain the formation of the rough interface in the early stage of glass corrosion. A thin layer of altered glass is formed by this process, and as the layer grows, the accessibility of water to the reactive interface becomes rate-limiting. As a consequence, only the most easily accessible species are dissolved. The others remain undissolved in the alteration layer, probably fixed in highly hydrolysis resistant clusters. A new estimation of water diffusivity in the glass when covered by the passivating layer was determined from the shift between B and H profiles, and was 10-23 m2.s-1, i.e. approximately 3 orders of magnitude lower than water diffusivity in the pristine material. Overall, in the absence of secondary crystalline phases that could consume the major components of the alteration layer (Si, Al), it is assumed that the glass dissolution rate continuously decreases due to the growth of the transport limiting alteration layer, in good agreement with residual rates reported in the literature for this glass. According to our results it can be expected that new kinetic models should emerge from an accurate time dependent budget of water within the nanoporous alteration layer.

Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

DOEpatents

Mickelsen, R.A.; Chen, W.S.

1985-08-13

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2

DOEpatents

Mickelsen, R.A.; Chen, W.S.

1982-06-15

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

Effect of a CoFeB layer on the anisotropic magnetoresistance of Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta films

NASA Astrophysics Data System (ADS)

Li, Minghua; Shi, Hui; Dong, Yuegang; Ding, Lei; Han, Gang; Zhang, Yao; Liu, Ye; Yu, Guanghua

2017-10-01

The anisotropic magnetoresistance (AMR) and magnetic properties of NiFe films can be remarkably enhanced via CoFeB layer. In the case of an ultrathin NiFe film having a Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta structure, the CoFeB/MgO layers suppressed the formation of magnetic dead layers and the interdiffusions and interface reactions between the NiFe and Ta layers. The AMR reached a maximum value of 3.56% at 450 °C. More importantly, a single NiFe (1 1 1) peak can be formed resulting in higher AMR values for films having CoFeB layer. This enhanced AMR also originated from the significant specular reflection of electrons owing to the crystalline MgO layer, together with the sharp interfaces with the NiFe layer. These factors together resulted in higher AMR and improved magnetic properties.

Structural Stability of Diffusion Barriers in Cu/Ru/MgO/Ta/Si

PubMed Central

Hsieh, Shu-Huei; Chen, Wen Jauh; Chien, Chu-Mo

2015-01-01

Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si were prepared by sputtering and electroplating techniques, in which the ultra-thin trilayer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is used as the diffusion barrier against the interdiffusion between Cu film and Si substrate. The various structures of Cu/Ru/MgO/Ta/Si were characterized by four-point probes for their sheet resistances, by X-ray diffractometers for their crystal structures, by scanning electron microscopes for their surface morphologies, and by transmission electron microscopes for their cross-section and high resolution views. The results showed that the ultra-thin tri-layer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is an effective diffusion barrier against the interdiffusion between Cu film and Si substrate. The MgO, and Ta layers as deposited are amorphous. The mechanism for the failure of the diffusion barrier is that the Ru layer first became discontinuous at a high temperature and the Ta layer sequentially become discontinuous at a higher temperature, the Cu atoms then diffuse through the MgO layer and to the substrate at the discontinuities, and the Cu3Si phases finally form. The maximum temperature at which the structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si are annealed and still have low sheet resistance is from 550 to 750 °C for the annealing time of 5 min and from 500 to 700 °C for the annealing time of 30 min. PMID:28347099

Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p + n Diodes

NASA Astrophysics Data System (ADS)

Sammak, Amir; Qi, Lin; Nanver, Lis K.

2015-12-01

The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance window. Contacting is achieved at the perimeter of the Ge-island anode directly to an Al interconnect metallization. The Ge is grown in oxide windows to the Si wafer and covered by a B and gallium (Ga) layer stack (PureGaB) composed of about a nanometer of Ga for forming the p + Ge region and 10 nm of B as an interdiffusion barrier to the Al. To form contact windows, the side-wall oxide is etched away, exposing a small tip of the Ge perimeter to Al that from this point travels about 5 μm into the bulk Ge crystal. In this process, Ge and Si materials are displaced, forming Ge-filled V-grooves at the Si surface. The Al coalesces in grains. This process is studied here by high-resolution cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy that confirm the purities of the Ge and Al grains. Diodes are fabricated with different geometries and statistical current-voltage characterization reveals a spread that can be related to across-the-wafer variations in the contact processing. The I- V behavior is characterized by low dark current, low contact resistance, and breakdown voltages that are suitable for operation in avalanching modes. The restricted access to the Ge of the Al inducing the Ge and Si material transport does not destroy the very good electrical characteristics typical of PureGaB Ge-on-Si diodes.

Measuring Diffusion of Liquids by Common-Path Interferometry

NASA Technical Reports Server (NTRS)

Rashidnia, Nasser

2003-01-01

A method of observing the interdiffusion of a pair of miscible liquids is based on the use of a common-path interferometer (CPI) to measure the spatially varying gradient of the index refraction in the interfacial region in which the interdiffusion takes place. Assuming that the indices of refraction of the two liquids are different and that the gradient of the index of refraction of the liquid is proportional to the gradient in the relative concentrations of either liquid, the diffusivity of the pair of liquids can be calculated from the temporal variation of the spatial variation of the index of refraction. This method yields robust measurements and does not require precise knowledge of the indices of refraction of the pure liquids. Moreover, the CPI instrumentation is compact and is optomechanically robust by virtue of its common- path design. The two liquids are placed in a transparent rectangular parallelepiped test cell. Initially, the interface between the liquids is a horizontal plane, above which lies pure liquid 2 (the less-dense liquid) and below which lies pure liquid 1 (the denser liquid). The subsequent interdiffusion of the liquids gives rise to a gradient of concentration and a corresponding gradient of the index of refraction in a mixing layer. For the purpose of observing the interdiffusion, the test cell is placed in the test section of the CPI, in which a collimated, polarized beam of light from a low-power laser is projected horizontally through a region that contains the mixing layer.

Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

NASA Astrophysics Data System (ADS)

Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

1993-06-01

Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

Effects of Sn Layer Orientation on the Evolution of Cu/Sn Interfaces

NASA Astrophysics Data System (ADS)

Sun, Menglong; Zhao, Zhangjian; Hu, Fengtian; Hu, Anmin; Li, Ming; Ling, Huiqin; Hang, Tao

2018-03-01

The effects of Sn layer orientation on the evolution of Cu/Sn joint interfaces were investigated. Three Sn layers possessing (112), (321) and (420) orientations were electroplated on polycrystalline Cu substrates respectively. The orientations of Sn layer preserved during reflowing at 250 °C for 10 s. After aging at 150 °C for different time, the interfacial microstructures were observed from the cross-section and top-view. The alignment between the c-axis of Sn and Cu diffusion direction significantly sped up the Cu diffusion, leading to the thickest intermetallic compound layer formed in (112) joint. Two types of voids, namely, intracrystalline voids and grain islanding caused intercrystalline voids generated at Cu/Cu3Sn interfaces due to the different interdiffusion coefficients of Cu and Sn (112) oriented Sn/Cu joint produced many more voids than (321) joint, and no voids were detected in (420) joint. Therefore, to enhance the reliability of solder joints, using (420) oriented Sn as solder layer could be an efficient way.

Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density.

PubMed

Bernardi, A; Ossó, J O; Alonso, M I; Goñi, A R; Garriga, M

2006-05-28

We have studied the epitaxial growth of self-assembled Ge quantum dots when a submonolayer of carbon is deposited on a Ge wetting layer (WL) prior to the growth of the dots. Using atomic-force microscopy combined with optical techniques like Raman and ellipsometry, we performed a systematic study of the role played by thermally activated Si interdiffusion on dot density, composition and morphology, by changing only the growth temperature T(WL) of the WL. Strikingly, we observe that higher dot densities and a narrower size distribution are achieved by increasing the deposition temperature T(WL), i.e. by enhancing Si interdiffusion from the substrate. We suggest a two-stage growth procedure for fine tuning of dot topography (density, shape and size) useful for possible optoelectronic applications.

Evolution of oxygenated cadmium sulfide (CdS:O) during high-temperature CdTe solar cell fabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meysing, Daniel M.; Reese, Matthew O.; Warren, Charles W.

Oxygenated cadmium sulfide (CdS:O) produced by reactive sputtering has emerged as a promising alternative to conventional CdS for use as the n-type window layer in CdTe solar cells. Here, complementary techniques are used to expose the window layer (CdS or CdS:O) in completed superstrate devices and combined with a suite of materials characterization to elucidate its evolution during high temperature device processing. During device fabrication amorphous CdS:O undergoes significant interdiffusion with CdTe and recrystallization, forming CdS1-yTey nanocrystals whose Te fraction approaches solubility limits. Significant oxygen remains after processing, concentrated in sulfate clusters dispersed among the CdS1-yTey alloy phase, accounting formore » ~30% of the post-processed window layer based on cross-sectional microscopy. Interdiffusion and recrystallization are observed in devices with un-oxygenated CdS, but to a much lesser extent. Etching experiments suggest that the CdS thickness is minimally changed during processing, but the CdS:O window layer is reduced from 100 nm to 60-80 nm, which is confirmed by microscopy. Alloying reduces the band gap of the CdS:O window layer to 2.15 eV, but reductions in thickness and areal density improve its transmission spectrum, which is well matched to device quantum efficiency. The changes to the window layer in the reactive environments of device fabrication are profoundly different than what occurs by thermal annealing in an inert environment, which produced films with a band gap of 2.4 eV for both CdS and CdS:O. These results illustrate for the first time the significant changes that occur to the window layer during processing that are critical to the performance of CdTe solar cells.« less

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

DOEpatents

Mickelsen, Reid A.; Chen, Wen S.

1982-01-01

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

DOEpatents

Mickelsen, Reid A [Bellevue, WA; Chen, Wen S [Seattle, WA

1985-08-13

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Quantum well intermixing of indium gallium arsenide(phosphorus)/indium phosphorus heterostructures

NASA Astrophysics Data System (ADS)

Haysom, Joan E.

This thesis studies several aspects of the interdiffusion of InGaAs(P)/InP quantum well (QW) heterostructures, from the fundamental defect mechanisms, through optimization of processing parameters, to novel device applications. Conclusions from each of these areas have been drawn which further the scientific understanding and the manufacturability of the technique. The thermal stability of a series of different wafers is studied to highlight how poor quality of growth can cause increased interdiffusion, and to review the requirements for achieving repeatable annealing. Purposeful and controlled interdiffusion is accomplished through the introduction of excess defects into layers above the QWs, which during a subsequent anneal, diffuse through the QWs and enhance interdiffusion of atoms of the QWs with atoms of the barriers. These excess defects are introduced using two different techniques, via growth at low temperatures (LT) using chemical beam epitaxy (CBE), and via implantation of phosphorus ions. The CBE LT growth technique is new, and reported for the first time in this thesis. Characterization of the as-grown layers leads us to believe that they have an excess of phosphorus. The diffusion rate of the mobile defects which cause the intermixing is also measured, and the interdiffusion is shown to occur predominantly on the group-V sublattice. Due to many similarities between this and the results of the implantation technique, it is proposed that these mobile defects are the same for both intermixing approaches, and that the behaviour can be explained by a phosphorus interstitial mechanism. Annealing recipes for the implantation-induced technique are optimized, and the sample-to-sample reproducibility of the blueshift for this method was found to be quite good (standard deviations of ˜6 meV on blueshifts of ˜70 meV). The lateral selectivity and refractive index changes are characterized, and used in combination to create novel buried waveguide devices.

Effect of Gold on the Microstructural Evolution and Integrity of a Sintered Silver Joint

NASA Astrophysics Data System (ADS)

Muralidharan, Govindarajan; Leonard, Donovan N.; Meyer, Harry M.

2017-07-01

There is a need for next-generation, high-performance power electronic packages and systems employing wide-bandgap devices to operate at high temperatures in automotive and electric grid applications. Sintered silver joints are currently being evaluated as an alternative to Pb-free solder joints. Of particular interest is the development of joints based on silver paste consisting of nano- or micron-scale particles that can be processed without application of external pressure. The microstructural evolution at the interface of a pressureless-sintered silver joint formed between a SiC die with Ti/Ni/Au metallization and an active metal brazed (AMB) substrate with Ag metallization at 250°C has been evaluated using scanning electron microscopy (SEM), x-ray microanalysis, and x-ray photoelectron spectroscopy (XPS). Results from focused ion beam (FIB) cross-sections show that, during sintering, pores in the sintered region near to the Au layer tend to be narrow and elongated with long axis oriented parallel to the interface. Further densification results in formation of many small, relatively equiaxed pores aligned parallel to the interface, creating a path for easy crack propagation. X-ray microanalysis results confirm interdiffusion between Au and Ag and that a region with poor mechanical strength is formed at the edge of this region of interdiffusion.

Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds

DOEpatents

Mickelsen, Reid A.; Chen, Wen S.

1983-01-01

Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

Limited-life cartridge primers

DOEpatents

Makowiecki, Daniel M.; Rosen, Robert S.

1998-01-01

A cartridge primer which utilizes an explosive that can be designed to become inactive in a predetermined period of time: a limited-life primer. The explosive or combustible material of the primer is an inorganic reactive multilayer (RML). The reaction products of the RML are sub-micron grains of non-corrosive inorganic compounds that would have no harmful effects on firearms or cartridge cases. Unlike use of primers containing lead components, primers utilizing RML's would not present a hazard to the environment. The sensitivity of an RML is determined by the physical structure and the stored interfacial energy. The sensitivity lowers with time due to a decrease in interfacial energy resulting from interdiffusion of the elemental layers. Time-dependent interdiffusion is predictable, thereby enabling the functional lifetime of an RML primer to be predetermined by the initial thickness and materials selection of the reacting layers.

Limited-life cartridge primers

DOEpatents

Makowiecki, Daniel M.; Rosen, Robert S.

2005-04-19

A cartridge primer which utilizes an explosive that can be designed to become inactive in a predetermined period of time: a limited-life primer. The explosive or combustible material of the primer is an inorganic reactive multilayer (RML). The reaction products of the RML are sub-micron grains of non-corrosive inorganic compounds that would have no harmful effects on firearms or cartridge cases. Unlike use of primers containing lead components, primers utilizing RML's would not present a hazard to the environment. The sensitivity of an RML is determined by the physical structure and the stored interfacial energy. The sensitivity lowers with time due to a decrease in interfacial energy resulting from interdiffusion of the elemental layers. Time-dependent interdiffusion is predictable, thereby enabling the functional lifetime of an RML primer to be predetermined by the initial thickness and materials selection of the reacting layers.

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process.

PubMed

Na, Jae Won; Rim, You Seung; Kim, Hee Jun; Lee, Jin Hyeok; Hong, Seonghwan; Kim, Hyun Jae

2017-09-06

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO 2 ) dielectric layer are in contact and thermally processed, a Si 4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm 2 V -1 s -1 and a on/off current ratio over 10 7 is successfully demonstrated.

Interdiffusion behavior between NiAlHf coating and Ni-based single crystal superalloy with different crystal orientations

NASA Astrophysics Data System (ADS)

Wang, Ruili; Gong, Xueyuan; Peng, Hui; Ma, Yue; Guo, Hongbo

2015-01-01

NiAlHf coatings were deposited onto Ni-based single crystal (SC) superalloy with different crystal orientations by electron beam physical vapor deposition (EB-PVD). The effects of the crystal orientations of the superalloy substrate on inter-diffusion behavior between the substrate and the NiAlHf coating were investigated. Substrate diffusion zone (SDZ) containing needle-like μ phases and interdiffusion zone (IDZ) mainly consisting of the ellipsoidal and rod-like μ phases were formed in the SC alloy after heat-treatment 10 h at 1100 °C. The thickness of secondary reaction zone (SRZ) formed in the SC alloy with (0 1 1) crystal orientation is about 14 μm after 50 h heat-treatment at 1100 °C, which is relatively thicker than that in the SC alloy with (0 0 1) crystal orientation, whereas the IDZ revealed similar thickness.

Electrochemically influenced cation inter-diffusion and Co 3O 4 formation on La 0.6Sr 0.4CoO 3 infiltrated into SOFC cathodes

DOE PAGES

Song, Xueyan; Lee, Shiwoo; Chen, Yun; ...

2015-06-18

Nanosized LSC electrocatalyst was infiltrated into a porous scaffold cathode composed of Sm 2O 3-doped CeO 2 (SDC) and La 0.6Sr 0.4Co 0.2Fe 0.8O 3-δ (LSCF) in a commercial button solid oxide fuel cell (SOFC). To understand the stability of cathodes infiltrated with LSC, the infiltrated composite cells were subjected to both electrochemical operating and thermal aging states at 750 °C for 1500 h. Nanostructure and local chemistry evolution of La 0.6Sr 0.4CoO 3 (LSC) infiltrated cathodes upon operation and aging were investigated by transmission electron microscopy. After operation, the LSC remained a cubic perovskite, and the crystal grains exhibitmore » comparable size to as-infiltrated LSC grains. Inter-diffusion of Fe from the LSCF to a Fe-incorporated LSC layer developed on the LSCF backbone. However, only sharp interfaces were observed between LSC and SDC backbone in the as-infiltrated cathode and such interfaces remain after operation. The infiltrated LSC on the SDC backbone also retains granular particle morphology. Furthermore, newly grown Co 3O 4 nanocrystals were found in the operated cathode. After thermal aging, on the other hand, cation inter-diffusion across the interfaces of the infiltrate particles and the cathode backbones is less than that from the operated cells. Lastly, the following hypothesis is proposed: Co 3O 4 forms on LSC arising from local charge balancing between cobalt and oxygen vacancies.« less

METAL SHEATHED BODIES

DOEpatents

Finniston, H.M.; Wyatt, L.M.; Plail, O.S.

1961-06-27

An aluminum-cased uranium fuel element is patented for use in nuclear reactors. A layer of a substance such as graphite or a metallic film, preferably of relatively low thermal-neutron capture cross section, between the uranium and aluminum prevents their interdiffusion.

Limited-life cartridge primers

DOEpatents

Makowiecki, D.M.; Rosen, R.S.

1998-06-30

A cartridge primer is described which utilizes an explosive that can be designed to become inactive in a predetermined period of time: a limited-life primer. The explosive or combustible material of the primer is an inorganic reactive multilayer (RML). The reaction products of the RML are sub-micron grains of non-corrosive inorganic compounds that would have no harmful effects on firearms or cartridge cases. Unlike use of primers containing lead components, primers utilizing RML`s would not present a hazard to the environment. The sensitivity of an RML is determined by the physical structure and the stored interfacial energy. The sensitivity lowers with time due to a decrease in interfacial energy resulting from interdiffusion of the elemental layers. Time-dependent interdiffusion is predictable, thereby enabling the functional lifetime of an RML primer to be predetermined by the initial thickness and materials selection of the reacting layers. 10 figs.

Effect of Gold on the Microstructural Evolution and Integrity of a Sintered Silver Joint

DOE PAGES

Muralidharan, Govindarajan; Leonard, Donovan N.; Meyer, Harry M.

2017-01-05

There is a need for next-generation, high-performance power electronic packages and systems employing wide band gap devices to operate at high temperatures in automotive and electric grid applications. Sintered silver joints are currently being evaluated as an alternative to Pb-free solder joints. Of particular interest is the development of joints based on silver paste consisting of nanoscale or micron scale particles that can be processed without the application of an external pressure. Microstructural evolution at the interface of a pressureless sintered silver joint formed between a SiC die with a Ti/Ni/Au metallization and an Active Metal Brazed substrate with Agmore » metallization at 250 °C was evaluated using Scanning Electron Microscopy, X-ray microanalysis, and X-ray Photo Electron Spectroscopy. Results from Focused Ion Beam cross-sections show that during sintering, the pores in the sintered region close to the Au layer tend to be smaller and are oriented predominantly with their longer dimension oriented parallel to the interface. With further densification, this results in the alignment of small pores parallel to the interface, creating a path for easy crack propagation. Lastly, X-ray microchemical analyses results confirm interdiffusion between Au and Ag and that a region with poor mechanical strength is formed at the edge of this region of interdiffusion.« less

Interface effects in ultra-thin films: Magnetic and chemical properties

NASA Astrophysics Data System (ADS)

Park, Sungkyun

When the thickness of a magnetic layer is comparable to (or smaller than) the electron mean free path, the interface between magnetic and non-magnetic layers becomes very important factor to determine magnetic properties of the ultra-thin films. The quality of interface can enhance (or reduce) the desired properties. Several interesting physical phenomena were studied using these interface effects. The magnetic anisotropy of ultra-thin Co films is studied as function of non-magnetic underlayer thickness and non- magnetic overlayer materials using ex situ Brillouin light scattering (BLS). I observed that perpendicular magnetic anisotropy (PMA) increases with underlayer thickness and saturates after 5 ML. This saturation can be understood as a relaxation of the in-plane lattice parameter of Au(111) on top of Cu(111) to its bulk value. For the overlayer study, Cu, Al, and Au are used. An Au overlayer gives the largest PMA due to the largest in-plane lattice mismatch between Co and Au. An unusual effect was found by adding an additional layer on top of the Au overlayer. An additional Al capping layer on top of the Au overlayer reduces the PMA significantly. The possible explanation is that the misfit strain at the interface between the Al and the Au can be propagated through the Au layer to affect the magnetic properties of Co even though the in- plane lattice mismatch is less than 1%. Another interesting problem in interface interdiffusion and thermal stability in magnetic tunnel junction (MTJ) structures is studied using X-ray photoelectron spectroscopy (XPS). Since XPS is a very chemically sensitive technique, it allows us to monitor interface interdiffusion of the MTJ structures as-deposited and during post-deposition processing. For the plasma- oxidized samples, Fe only participates in the oxidation reduction process. In contrast to plasma-oxidized samples, there were no noticeable chemical shifts as- deposited and during post-deposition processing in air- oxidized samples. However, peak intensity variations were observed due to interface interdiffusion.

Interdiffusion and reactions between U-Mo and Zr at 650 °C as a function of time

NASA Astrophysics Data System (ADS)

Park, Y.; Keiser, D. D.; Sohn, Y. H.

2015-01-01

Development of monolithic U-Mo alloy fuel (typically U-10 wt.%Mo) for the Reduced Enrichment for Research and Test Reactors (RERTR) program entails a use of Zr diffusion barrier to eliminate the interdiffusion-reactions between the fuel alloy and Al-alloy cladding. The application of Zr barrier to the U-Mo fuel system requires a co-rolling process that utilizes a soaking temperature of 650 °C, which represents the highest temperature the fuel system is exposed to during both fuel manufacturing and reactor application. Therefore, in this study, development of phase constituents, microstructure and diffusion kinetics of U-10 wt.%Mo and Zr was examined using solid-to-solid diffusion couples annealed at 650 °C for 240, 480 and 720 h. Phase constituents and microstructural development were analyzed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Concentration profiles were mapped as diffusion paths on the isothermal ternary phase diagram. Within the diffusion zone, single-phase layers of β-Zr and β-U were observed along with a discontinuous layer of Mo2Zr between the β-Zr and β-U layers. In the vicinity of Mo2Zr phase, islands of α-Zr phases were also found. In addition, acicular α-Zr and U6Zr3Mo phases were observed within the γ-U(Mo) terminal alloy. Growth rate of the interdiffusion-reaction zone was determined to be 7.75 (± 5.84) × 10-16 m2/s at 650 °C, however with an assumption of a certain incubation period.

Stress, deformation and diffusion interactions in solids - A simulation study

NASA Astrophysics Data System (ADS)

Fischer, F. D.; Svoboda, J.

2015-05-01

Equations of diffusion treated in the frame of Manning's concept, are completed by equations for generation/annihilation of vacancies at non-ideal sources and sinks, by conservation laws, by equations for generation of an eigenstrain state and by a strain-stress analysis. The stress-deformation-diffusion interactions are demonstrated on the evolution of a diffusion couple consisting of two thin layers of different chemical composition forming a free-standing plate without external loading. The equations are solved for different material parameters represented by the values of diffusion coefficients of individual components and by the intensity of sources and sinks for vacancies. The results of simulations indicate that for low intensity of sources and sinks for vacancies a significant eigenstress state can develop and the interdiffusion process is slowed down. For high intensity of sources and sinks for vacancies a significant eigenstrain state can develop and the eigenstress state quickly relaxes. If the difference in the diffusion coefficients of individual components is high, then the intensity of sources and sinks for vacancies influences the interdiffusion process considerably. For such systems their description only by diffusion coefficients is insufficient and must be completed by a microstructure characterization.

Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air

NASA Astrophysics Data System (ADS)

Suria, Ateeq J.; Yalamarthy, Ananth Saran; Heuser, Thomas A.; Bruefach, Alexandra; Chapin, Caitlin A.; So, Hongyun; Senesky, Debbie G.

2017-06-01

In this paper, we describe the use of 50 nm atomic layer deposited (ALD) Al2O3 to suppress the interfacial reaction and inter-diffusion between the gate metal and semiconductor interface, to extend the operation limit up to 600 °C in air. Suppression of diffusion is verified through Auger electron spectroscopy (AES) depth profiling and X-ray diffraction (XRD) and is further supported with electrical characterization. An ALD Al2O3 thin film (10 nm and 50 nm), which functions as a dielectric layer, was inserted between the gate metal (Ni/Au) and heterostructure-based semiconductor material (AlGaN/GaN) to form a metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). This extended the 50 nm ALD Al2O3 MIS-HEMT (50-MIS) current-voltage (Ids-Vds) and gate leakage (Ig,leakage) characteristics up to 600 °C. Both, the 10 nm ALD Al2O3 MIS-HEMT (10-MIS) and HEMT, failed above 350 °C, as evidenced by a sudden increase of approximately 50 times and 5.3 × 106 times in Ig,leakage, respectively. AES on the HEMT revealed the formation of a Ni-Au alloy and Ni present in the active region. Additionally, XRD showed existence of metal gallides in the HEMT. The 50-MIS enables the operation of AlGaN/GaN based electronics in oxidizing high-temperature environments, by suppressing interfacial reaction and inter-diffusion of the gate metal with the semiconductor.

Superconductive articles including cerium oxide layer

DOEpatents

Wu, X.D.; Muenchausen, R.E.

1993-11-16

A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure. 7 figures.

Superconductive articles including cerium oxide layer

DOEpatents

Wu, Xin D.; Muenchausen, Ross E.

1993-01-01

A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.

FAST TRACK COMMUNICATION: Deposition temperature effect on electrical properties and interface of high-k ZrO2 capacitor

NASA Astrophysics Data System (ADS)

Kim, Joo-Hyung; Ignatova, Velislava A.; Heitmann, Johannes; Oberbeck, Lars

2008-09-01

The electrical characteristics, i.e. leakage current and capacitance, of ZrO2 based metal-insulator-metal structures, grown at 225, 250 and 275 °C by atomic layer deposition, were studied. The lowest leakage current was obtained at 250 °C deposition temperature, while the highest dielectric constant (k ~ 43) was measured for the samples grown at 275 °C, most probably due to the formation of tetragonal/cubic phases in the ZrO2 layer. We have shown that the main leakage current of these ZrO2 capacitors is governed by the Poole-Frenkel conduction mechanism. It was observed by x-ray photoelectron spectroscopy depth profiling that at 275 °C deposition temperature the oxygen content at and beyond the ZrO2/TiN interface is higher than at lower deposition temperatures, most probably due to oxygen inter-diffusion towards the electrode layer, forming a mixed TiN-TiOxNy interface layer. At and above 275 °C the ZrO2 layer changes its structure and becomes crystalline as proven by XRD analysis.

Vanadium diffusion coating on HT-9 cladding for mitigating the fuel cladding chemical interactions

NASA Astrophysics Data System (ADS)

Lo, Wei-Yang; Yang, Yong

2014-08-01

Fuel cladding chemical interaction (FCCI) has been identified as one of the crucial issues for developing Ferritic/Martensitic (F/M) stainless steel claddings for metallic fuels in a fast reactor. The anticipated elevated temperature and high neutron flux can significantly aggravate the FCCI, in terms of formation of inter-diffusion and lower melting point eutectic phases. To mitigate the FCCI, vanadium carbide coating as a diffusion barrier was deposited on the HT-9 substrate using a pack cementation diffusion coating (PCDC) method, and the processing temperature was optimized down to 730 °C. A solid metallurgical bonding between the coating layer and substrate was achieved, and the coating is free from through depth cracks. The microstructural characterizations using SEM and TEM show a nanostructured grain structure. EDS/WDS and XRD analysis confirm the phase of coating layer as V2C. Diffusion couple tests at 660 °C for 100 h demonstrate that V2C layer with a thickness of less than 5 μm can effectively eliminate the inter-diffusion between the lanthanide cerium and HT-9 steel.

Orientation dependences of atomic structures in chemically heterogeneous Cu{sub 50}Ta{sub 50}/Ta glass-crystal interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Guiqin; Gao, Xiaoze; Li, Jinfu

2015-01-07

Molecular dynamics simulations based on an angular-dependent potential were performed to examine the structural properties of chemically heterogeneous interfaces between amorphous Cu{sub 50}Ta{sub 50} and crystalline Ta. Several phenomena, namely, layering, crystallization, intermixing, and composition segregation, were observed in the Cu{sub 50}Ta{sub 50} region adjacent to the Ta layers. These interfacial behaviors are found to depend on the orientation of the underlying Ta substrate: Layering induced by Ta(110) extends the farthest into Cu{sub 50}Ta{sub 50}, crystallization in the Cu{sub 50}Ta{sub 50} region is most significant for interface against Ta(100), while inter-diffusion is most pronounced for Ta(111). It turns out thatmore » the induced layering behavior is dominated by the interlayer distances of the underlying Ta layers, while the degree of inter-diffusion is governed by the openness of the Ta crystalline layers. In addition, composition segregations are observed in all interface models, corresponding to the immiscible nature of the Cu-Ta system. Furthermore, Voronoi polyhedra 〈0,5,2,6〉 and 〈0,4,4,6〉 are found to be abundant in the vicinity of the interfaces for all models, whose presence is believed to facilitate the structural transition between amorphous and body centered cubic.« less

Role of indium tin oxide electrode on the microstructure of self-assembled WO3-BiVO4 hetero nanostructures

NASA Astrophysics Data System (ADS)

Song, Haili; Li, Chao; Van, Chien Nguyen; Dong, Wenxia; Qi, Ruijuan; Zhang, Yuanyuan; Huang, Rong; Chu, Ying-Hao; Duan, Chun-Gang

2017-11-01

Self-assembled WO3-BiVO4 nanostructured thin films were grown on a (001) yttrium stabilized zirconia (YSZ) substrate by the pulsed laser deposition method with and without the indium tin oxide (ITO) bottom electrode. Their microstructures including surface morphologies, crystalline phases, epitaxial relationships, interface structures, and composition distributions were investigated by scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray energy dispersive spectroscopy. In both samples, WO3 formed nanopillars embedded into the monoclinic BiVO4 matrix with specific orientation relationships. In the sample with the ITO bottom electrode, an atomically sharp BiVO4/ITO interface was formed and the orthorhombic WO3 nanopillars were grown on a relaxed BiVO4 buffer layer with a mixed orthorhombic and hexagonal WO3 transition layer. In contrast, a thin amorphous layer appears at the interfaces between the thin film and the YSZ substrate in the sample without the ITO electrode. In addition, orthorhombic Bi2WO6 lamellar nanopillars were formed between WO3 and BiVO4 due to interdiffusion. Such a WO3-Bi2WO6-BiVO4 double heterojunction photoanode may promote the photo-generated charge separation and further improve the photoelectrochemical water splitting properties.

Interfacial Reaction During Dissimilar Joining of Aluminum Alloy to Magnesium and Titanium Alloys

NASA Astrophysics Data System (ADS)

Robson, J. D.; Panteli, A.; Zhang, C. Q.; Baptiste, D.; Cai, E.; Prangnell, P. B.

Ultrasonic welding (USW), a solid state joining process, has been used to produce welds between AA6111 aluminum alloy and AZ31 magnesium alloys or titanium alloy Ti-6Al-4V. The mechanical properties of the welds have been assessed and it has been shown that it is the nature and thickness of the intermetallic compounds (IMCs) at the joint line that are critical in determining joint strength and particularly fracture energy. Al-Mg welds suffer from a very low fracture energy, even when strength is comparable with that of similar metal Mg-Mg welds, due to a thick IMC layer always being formed. It is demonstrated that in USW of Al-Ti alloy the slow interdiffusion kinetics means that an IMC layer does not form during welding, and fracture energy is greater. A model has been developed to predict IMC formation during welding and provide an understanding of the critical factors that determine the IMC thickness. It is predicted that in Al-Mg welds, most of the lMC thickening occurs whilst the IMC regions grow as separate islands, prior to the formation of a continuous layer.

Interdiffusion behavior of tungsten or rhenium and group 5 and 6 elements and alloys of the periodic table, part 1. [at dissimilar metal joints

NASA Technical Reports Server (NTRS)

Arcella, F. G.

1974-01-01

Arc cast W, CVD W, CVD Re, and powder metallurgy Re materials were hot isostatically pressure welded to ten different refractory metals and alloys (Cb, Cb-1Zr, Ta, Ta-10W, T-111, ASTAR-811C, W-25Re, Mo-50Re, W-30Re-20Mo, ect.) and thermally aged at 10 to the minus 8th power torr at 1200, 1500, 1630, 1800, and 2000 C for 100 to 2000 hours. Electron beam microprobe analysis was used to characterize the interdiffusion zone width of each couple system as a function of age time and temperature. Extrapolations of interdiffusion zone thickness to 10,000 hours were made. Classic interdiffusion analysis was performed for several of the systems by Boltzmann-Matano analysis. A method of inhibiting Kirkendall voids from forming during thermal ageing of dissimilar metal junctions was devised and experimentally demonstrated. An electron beam weld study of Cb-1Zr to Re and W-25Re demonstrated the limited acceptability of these welds.

Controllable Growth of Perovskite Films by Room-Temperature Air Exposure for Efficient Planar Heterojunction Photovoltaic Cells.

PubMed

Yang, Bin; Dyck, Ondrej; Poplawsky, Jonathan; Keum, Jong; Das, Sanjib; Puretzky, Alexander; Aytug, Tolga; Joshi, Pooran C; Rouleau, Christopher M; Duscher, Gerd; Geohegan, David B; Xiao, Kai

2015-12-01

A two-step solution processing approach has been established to grow void-free perovskite films for low-cost high-performance planar heterojunction photovoltaic devices. A high-temperature thermal annealing treatment was applied to drive the diffusion of CH3NH3I precursor molecules into a compact PbI2 layer to form perovskite films. However, thermal annealing for extended periods led to degraded device performance owing to the defects generated by decomposition of perovskite into PbI2. A controllable layer-by-layer spin-coating method was used to grow "bilayer" CH3NH3I/PbI2 films, and then drive the interdiffusion between PbI2 and CH3NH3I layers by a simple air exposure at room temperature for making well-oriented, highly crystalline perovskite films without thermal annealing. This high degree of crystallinity resulted in a carrier diffusion length of ca. 800 nm and a high device efficiency of 15.6%, which is comparable to values reported for thermally annealed perovskite films. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improved Optical Transmittance and Crystal Characteristics of ZnS:TbOF Thin Film on Bi4Ti3O12/Indium Tin Oxide/Glass Substrate by Using a SiO2 Buffer Layer

NASA Astrophysics Data System (ADS)

Chia, Wei‑Kuo; Yokoyama, Meiso; Yang, Cheng‑Fu; Chiang, Wang‑Ta; Chen, Ying‑Chung

2006-07-01

Bi4Ti3O12 thin films are deposited on indium tin oxide (ITO)/glass substrates using RF magnetron sputtering technology and are annealed at 675 °C in a rapid thermal annealing furnace in an oxygen atmosphere. The resulting films have high optical transmittances and good crystalline characteristics. ZnS:TbOF films are then deposited on the Bi4Ti3O12 films, causing the originally highly transparent specimens to blacken and to resemble a glass surface coated with carbon powder. The optical transmittance of the specimen is less than 15% under the visible wavelength range, and neither a crystalline phase nor a distinct ZnS grain structure is evident in X-ray diffractometer (XRD) and scanning electronic microscope (SEM). Secondary ion mass spectrometer (SIMS) analysis reveals the occurrence of interdiffusion between the ZnS and Bi4Ti3O12 layers. This suggests that one or more unknown chemical reactions take place among the elements Bi, S, and O at the interface during the deposition of ZnS:TbOF film on a Bi4Ti3O12/ITO/glass substrate. These reactions cause the visible transmittance of the specimens to deteriorate dramatically. To prevent interdiffusion, a silicon dioxide (SiO2) buffer layer 100 nm thick was grown on the Bi4Ti3O12/ITO/glass substrate using plasma-enhanced chemical vapor deposition (PECVD), then the ZnS:TbOF film was grown on the SiO2 buffer layer. The transmittance of the resulting specimen is enhanced approximately 8-fold in the visible region. XRD patterns reveal the ZnS(111)-oriented phase is dominant. Furthermore, dense, crack-free ZnS:TbOF grains are observed by SEM. The results imply that the SiO2 buffer layer sandwiched between the ZnS:TbOF and Bi4Ti3O2 layers effectively separates the two layers. Therefore, interdiffusion and chemical reactions are prevented at the interface of the two layers, and the crystalline characteristics of the ZnS:TbOF layer and the optical transmittance of the specimen are improved as a result. Finally, the dielectric constant of the stacked structure is lower than that of the single layer structure without SiO2, but the dielectric breakdown strength is enhanced.

Formation of silicides in annealed periodic multilayers

NASA Astrophysics Data System (ADS)

Maury, H.; Jonnard, P.; Le Guen, K.; André, J.-M.

2009-05-01

Periodic multilayers of nanometric period are widely used as optical components for the X-ray and extreme UV (EUV) ranges, in X-ray space telescopes, X-ray microscopes, EUV photolithography or synchrotron beamlines for example. Their optical performances depend on the quality of the interfaces between the various layers: chemical interdiffusion or mechanical roughness shifts the application wavelength and can drastically decrease the reflectance. Since under high thermal charge interdiffusion is known to get enhanced, the study of the thermal stability of such structures is essential to understand how interfacial compounds develop. We have characterized X-ray and EUV siliconcontaining multilayers (Mo/Si, Sc/Si and Mg/SiC) as a function of the annealing temperature (up to 600°C) using two non-destructive methods. X-ray emission from the silicon atoms, describing the Si valence states, is used to determine the chemical nature of the compounds present in the interphases while X-ray reflectivity in the hard and soft X-ray ranges can be related to the optical properties. In the three cases, interfacial metallic (Mo, Sc, Mg) silicides are evidenced and the thickness of the interphase increases with the annealing temperature. For Mo/Si and Sc/Si multilayers, silicides are even present in the as-prepared multilayers. Characteristic parameters of the stacks are determined: composition of the interphases, thickness and roughness of the layers and interphases if any. Finally, we have evidenced the maximum temperature of application of these multilayers to minimize interdiffusion.

Fabrication of photovoltaic laser energy converterby MBE

NASA Technical Reports Server (NTRS)

Lu, Hamilton; Wang, Scott; Chan, W. S.

1993-01-01

A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special high-temperature electron-beam (e-beam) sources were developed especially for the MBE growth of the junctions and CoSi2 layers. Making use of the small (greater than 1.2 percent) lattice mismatch between CoSi2 and Si layers, high-quality and pinhole-free epilayers were achieved, providing a capability of fabricating all the junctions and connecting layers as a single growth process with one pumpdown. Well-defined multiple p-n junctions connected by CoSi2 layers were accomplished by employing a low growth temperature (greater than 700 C) and a low growth rate (less than 0.5 microns/hour). Producing negligible interdiffusion, the low growth temperature and rate also produced negligible pinholes in the CoSi2 layers. For the first time, a stack of three p-n junctions connected by two 10(exp -5) Ohm-cm CoSi2 layers was achieved, meeting the high conversion efficiency requirement. This process can now be optimized for high growth rate to form a practical converter with 10 p-n junctions in the stack.

Ion-Exchange Interdiffusion Model with Potential Application to Long-Term Nuclear Waste Glass Performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neeway, James Joseph; Kerisit, Sebastien N.; Liu, Jia

2016-05-05

Abstract: Ion exchange is an integral mechanism influencing the corrosion of glasses. Due to the formation of alteration layers in aqueous conditions, it is difficult to conclusively deconvolute the process of ion exchange from other processes, principally dissolution of the glass matrix. Therefore, we have developed a method to isolate alkali diffusion that involves contacting glass coupons with a solution of 6LiCl dissolved in functionally inert dimethyl sulfoxide. We employ the method at temperatures ranging from 25 to 150 °C with various glass formulations. Glass compositions include simulant nuclear waste glasses, such as SON68 and the international simple glass (ISG),more » glasses in which the nature of the alkali element was varied, and glasses that contained more than one alkali element. An interdiffusion model based on Fick’s second law was developed and applied to all experiments to extract diffusion coefficients. The model expands established models of interdiffusion to the case where multiple types of alkali sites are present in the glass. Activation energies for alkali ion exchange were calculated and the results are in agreement with those obtained in glass strengthening experiments but are nearly five times higher than values reported for diffusion-controlled processes in nuclear waste glass corrosion experiments. A discussion of the root causes for this apparent discrepancy is provided. The interdiffusion model derived from laboratory experiments is expected to be useful for modeling glass corrosion in a geological repository when the silicon concentration is high.« less

Iron-platinum multilayer thin film reactions to form L1(0) iron-platinum and exchange spring magnets

NASA Astrophysics Data System (ADS)

Yao, Bo

FePt films with the L10 phase have potential applications for magnetic recording and permanent magnets due to its high magnetocrystalline anisotropy energy density. Heat treatment of [Fe/Pt] n multilayer films is one approach to form the L10 FePt phase through a solid state reaction. This thesis has studied the diffusion and reaction of [Fe/Pt]n multilayer films to form the L10 FePt phase and has used this understanding to construct exchange spring magnets. The process-structure-property relations of [Fe/Pt] n multilayer films were systematically examined. The transmission electron microscopy (TEM) study of the annealed multilayers indicates that the Pt layer grows at the expense of Fe during annealing, forming a disordered fcc FePt phase by the interdiffusion of Fe into Pt. This thickening of the fcc Pt layer can be attributed to the higher solubilities of Fe into fcc Pt, as compared to the converse. For the range of film thickness studied, a continuous L10 FePt product layer that then thickens with further annealing is not found. Instead, the initial L10 FePt grains are distributed mainly on the grain boundaries within the fcc FePt layer and at the Fe/Pt interfaces and further transformation of the sample to the ordered L10 FePt phase proceeds coupled with the growth of the initial L10 FePt grains. A comprehensive study of annealed [Fe/Pt]n films is provided concerning the phase fraction, grain size, nucleation/grain density, interdiffusivity, long-range order parameter, and texture, as well as magnetic properties. A method based on hollow cone dark field TEM is introduced to measure the volume fraction, grain size, and density of ordered L10 FePt phase grains in the annealed films, and low-angle X-ray diffraction is used to measure the effective Fe-Pt interdiffusivity. The process-structure-properties relations of two groups of samples with varying substrate temperature and periodicity are reported. The results demonstrate that the processing parameters (substrate temperature, periodicity) have a strong influence on the structure (effective interdiffusivity, L1 0 phase volume fraction, grain size, and density) and magnetic properties. The correlation of these parameters suggests that the annealed [Fe/Pt]n multilayer films have limited nuclei, and the subsequent growth of L10 phase is very important to the extent of ordered phase formed. A correlation between the grain size of fcc FePt phase, grain size of the L10 FePt phase, the L10 FePt phase fraction, and magnetic properties strongly suggests that the phase transformation of fcc →L10 is highly dependent on the grain size of the parent fcc FePt phase. A selective phase growth model is proposed to explain the phenomena observed. An investigation of the influence of total film thickness on the phase formation of the L10 FePt phase in [Fe/Pt] n multilayer films and a comparison of this to that of FePt co-deposited alloy films is also conducted. A general trend of greater L1 0 phase formation in thicker films was observed in both types of films. It was further found that the thickness dependence of the structure and of the magnetic properties in [Fe/Pt]n multilayer films is much stronger than that in FePt alloy films. This is related to the greater chemical energy contained in [Fe/Pt]n films than FePt alloy films, which is helpful for the L10 FePt phase growth. However, the initial nucleation temperature of [Fe/Pt]n multilayers and co-deposited alloy films was found to be similar. An investigation of L10 FePt-based exchange spring magnets is presented based on our understanding of the L10 formation in [Fe/Pt] n multilayer films. It is known that exchange coupling is an interfacial magnetic interaction and it was experimentally shown that this interaction is limited to within several nanometers of the interface. A higher degree of order of the hard phase is shown to increase the length scale slightly. Two approaches can be used to construct the magnets. For samples with composition close to stoichiometric L10 FePt, the achievement of higher energy product is limited by the average saturation magnetization, and therefore, a lower annealing temperature is beneficial to increase the energy product, allowing a larger fraction of disordered phase. For samples with higher Fe concentration, the (BH)max is limited by the low coercivity of annealed sample, and a higher annealing temperature is beneficial to increase the energy product.

Y0.08Sr0.88TiO3-CeO2 composite as a diffusion barrier layer for stainless-steel supported solid oxide fuel cell

NASA Astrophysics Data System (ADS)

Kim, Kun Joong; Kim, Sun Jae; Choi, Gyeong Man

2016-03-01

A new diffusion barrier layer (DBL) is proposed for solid oxide fuel cells (SOFCs) supported on stainless-steel where DBL prevents inter-diffusion of atoms between anode and stainless steel (STS) support during fabrication and operation of STS-supported SOFCs. Half cells consisting of dense yttria-stabilized zirconia (YSZ) electrolyte, porous Ni-YSZ anode layer, and ferritic STS support, with or without Y0.08Sr0.88TiO3-CeO2 (YST-CeO2) composite DBL, are prepared by tape casting and co-firing at 1250 and 1350 °C, respectively, in reducing (H2) atmosphere. The porous YST-CeO2 layer (t ∼ 60 μm) blocks inter-diffusion of Fe and Ni, and captures the evaporated Cr during cell fabrication (1350 °C). The cell with DBL and La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) cathode achieved a maximum power density of ∼220 mW cm-2 which is stable at 700 °C. In order to further improve the power performance, Ni coarsening in anode during co-firing must be prevented or alternative anode which is resistive to coarsening is suggested. This study demonstrates that the new YST-CeO2 layer is a promising as a DBL for stainless-steel-supported SOFCs fabricated with co-firing process.

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

NASA Astrophysics Data System (ADS)

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

2017-11-01

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.

On the accuracy of the interdiffusion coefficient measurements of high-temperature binary mixtures under ISS conditions

NASA Astrophysics Data System (ADS)

Saez, Núria; Ruiz, Xavier; Pallarés, Jordi; Shevtsova, Valentina

2013-04-01

An accelerometric record from the IVIDIL experiment (ESA Columbus module) has exhaustively been studied. The analysis involved the determination of basic statistical properties as, for instance, the auto-correlation and the power spectrum (second-order statistical analyses). Also, and taking into account the shape of the associated histograms, we address another important question, the non-Gaussian nature of the time series using the bispectrum and the bicoherence of the signals. Extrapolating the above-mentioned results, a computational model of a high-temperature shear cell has been performed. A scalar indicator has been used to quantify the accuracy of the diffusion coefficient measurements in the case of binary mixtures involving photovoltaic silicon or liquid Al-Cu binary alloys. Three different initial arrangements have been considered, the so-called interdiffusion, centred thick layer and the lateral thick layer. Results allow us to conclude that, under the conditions of the present work, the diffusion coefficient is insensitive to the environmental conditions, that is to say, accelerometric disturbances and initial shear cell arrangement.

Fe/Si(001) Ferromagnetic Layers: Reactivity, Local Atomic Structure and Magnetism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lungu, G. A.; Costescu, R. M.; Husanu, M. A.

2011-10-03

Ultrathin ferromagnetic Fe layers on Si(001) have recently been synthesized using the molecular beam epitaxy (MBE) technique, and their structural and magnetic properties, as well as their interface reactivity have been investigated. The study was undertaken as function of the amount of Fe deposited and of substrate temperature. The interface reactivity was characterized by Auger electron spectroscopy (AES). The surface structure was characterized by low-energy electron diffraction (LEED). The magnetism was investigated by magneto-optical Kerr effect (MOKE). A higher deposition temperature stabilizes a better surface ordering, but it also enhances Fe and Si interdiffusion and it therefore decreases the magnetism.more » Despite the rapid disappearance of the long range order with Fe deposition at room temperature, the material exhibits a significant uniaxial in-plane magnetic anisotropy. For the Fe deposition performed at high temperature (500 deg. C), a weak ferromagnetism is still observed, with saturation magnetization of about 10% of the value obtained previously. MOKE studies allowed inferring the main properties of the distinct formed layers.« less

Joining Dental Ceramic Layers With Glass

PubMed Central

Saied, MA; Lloyd, IK; Haller, WK; Lawn, BR

2011-01-01

Objective Test the hypothesis that glass-bonding of free-form veneer and core ceramic layers can produce robust interfaces, chemically durable and aesthetic in appearance and, above all, resistant to delamination. Methods Layers of independently produced porcelains (NobelRondo™ Press porcelain, Nobel BioCare AB and Sagkura Interaction porcelain, Elephant Dental) and matching alumina or zirconia core ceramics (Procera alumina, Nobel BioCare AB, BioZyram yttria stabilized tetragonal zirconia polycrystal, Cyrtina Dental) were joined with designed glasses, tailored to match thermal expansion coefficients of the components and free of toxic elements. Scanning electron microprobe analysis was used to characterize the chemistry of the joined interfaces, specifically to confirm interdiffusion of ions. Vickers indentations were used to drive controlled corner cracks into the glass interlayers to evaluate the toughness of the interfaces. Results The glass-bonded interfaces were found to have robust integrity relative to interfaces fused without glass, or those fused with a resin-based adhesive. Significance The structural integrity of the interfaces between porcelain veneers and alumina or zirconia cores is a critical factor in the longevity of all-ceramic dental crowns and fixed dental prostheses. PMID:21802131

Interdiffusion in nanometer-scale multilayers investigated by in situ low-angle x-ray diffraction

NASA Astrophysics Data System (ADS)

Wang, Wei-Hua; Bai, Hai Yang; Zhang, Ming; Zhao, J. H.; Zhang, X. Y.; Wang, W. K.

1999-04-01

An in situ low-angle x-ray diffraction technique is used to investigate interdiffusion phenomena in various metal-metal and metal-amorphous Si nanometer-scale compositionally modulated multilayers (ML's). The temperature-dependent interdiffusivities are obtained by accurately monitoring the decay of the first-order modulation peak as a function of annealing time. Activation enthalpies and preexponential factors for the interdiffusion in the Fe-Ti, Ag-Bi, Fe-Mo, Mo-Si, Ni-Si, Nb-Si, and Ag-Si ML's are determined. Activation enthalpies and preexponential factors for the interdiffusion in the ML's are very small compared with that in amorphous alloys and crystalline solids. The relation between the atomic-size difference and interdiffusion in the ML's are investigated. The observed interdiffusion characteristics are compared with that in amorphous alloys and crystalline α-Zr, α-Ti, and Si. The experimental results suggest that a collective atomic-jumping mechanism govern the interdiffusion in the ML's, the collective proposal involving 8-15 atoms moving between extended nonequilibrium defects by thermal activation. The role of the interdiffusion in the solid-state reaction in the ML's is also discussed.

Morphology, topography, and hardness of diffusion bonded sialon to AISI 420 at different bonding time

NASA Astrophysics Data System (ADS)

Ibrahim, Nor Nurulhuda Md.; Hussain, Patthi; Awang, Mokhtar

2015-07-01

Sialon and AISI 420 martensitic stainless steel were diffusion bonded in order to study the effect of bonding time on reaction layer's growth. Joining of these materials was conducted at 1200°C under a uniaxial pressure of 17 MPa in a vacuum ranging from 5.0 to 8.0×10-6 Torr with bonding time varied for 0.5, 2, and 3 h. Thicker reaction layer was formed in longer bonded sample since the elements from sialon could diffuse further into the steel. Sialon retained its microstructure but it was affected at the initial contact with the steel to form the new interface layer. Diffusion layer grew toward the steel and it was segregated with the parent steel as a result of the difference in properties between these regions. The segregation formed a stream-like structure and its depth decreased when the bonding time was increased. The microstructure of the steel transformed into large grain size with precipitates. Prolonging the bonding time produced more precipitates in the steel and reduced the steel thickness as well. Interdiffusions of elements occurred between the joined materials and the concentrations were decreasing toward the steel and vice versa. Silicon easily diffused into the steel because it possessed lower ionization potential compared to nitrogen. Formation of silicide and other compounds such as carbides were detected in the interface layer and steel grain boundary, respectively. These compounds were harmful due to silicide brittleness and precipitation of carbides in the grain boundary might cause intergranular corrosion cracking. Sialon retained its hardness but it dropped very low at the interface layer. The absence of crack at the joint in all samples could be contributed from the ductility characteristic of the reaction layer which compensated the residual stress that was formed upon the cooling process.

Deterioration of reflecting coatings by intermetallic diffusion.

PubMed

Hunter, W R; Mikes, T L; Hass, G

1972-07-01

Gold diffraction gratings overcoated with Al + MgF(2) to increase their efficiency in the vacuum ultraviolet suffered a severe loss in efficiency within six months to a year after coating; for example, from 50% to 2% at lambda1216 A. The cause of this loss was assumed to be interdiffusion of Au and Al; therefore, a more complete study of Au-Al film combinations was performed. The coatings were aged at room and elevated temperatures. Reflectance measurements were made in the visible and vacuum ultraviolet spectral regions. For wavelengths longer than lambda900 A, the measurements show very little change until the diffusion boundary reaches the penetration depth of the radiation. If Al is the first surface layer, however, reflectance measurements at lambda584 A permit measuring the progress of the diffusion boundary toward the Al surface because of the low absorptance of Al at this wavelength. Interdiffusion can be effectively eliminated by the use of thin dielectric layers uch as SiO and the natural oxide of Al. Such protected coatings have been exposed for one week at a temperature of 170 degrees C with no visible sign of diffusion, whereas a similar coating without the barrier layer would become useless in less than 1 h. Some preliminary studies have been made with Pt-Al film combinations.

Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Paik, Hanjong; Moyer, Jarrett A.; Spila, Timothy; Tashman, Joshua W.; Mundy, Julia A.; Freeman, Eugene; Shukla, Nikhil; Lapano, Jason M.; Engel-Herbert, Roman; Zander, Willi; Schubert, Jürgen; Muller, David A.; Datta, Suman; Schiffer, Peter; Schlom, Darrell G.

2015-10-01

We report the growth of (001)-oriented VO2 films as thin as 1.5 nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy of the (001) VO2 surface. Another key limitation is interdiffusion with the (001) TiO2 substrate, which we quantify using low angle annular dark field scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy. We find that controlling island coalescence on the (001) surface and minimization of cation interdiffusion by using a low growth temperature followed by a brief anneal at higher temperature are crucial for realizing ultrathin VO2 films with abrupt MIT behavior.

Low resistance AL2O3 magnetic tunnel junctions optimized through in situ conductance measurements

NASA Astrophysics Data System (ADS)

Wolfman, J.; Mauri, D.; Lin, T.; Yang, J.; Chen, T.

2005-06-01

In situ electrical conductance is used to monitor the growth and natural oxidation of aluminum on top of a CoFe electrode. Light oxidation is found to enhance the electron specular scattering of the CoFe/vacuum interface. Aluminum deposited onto CoFe intermixes to a depth of a few atomic layers, however, subsequent natural oxidation tends to reverse this interdiffusion through oxygen-driven A1 segregation. At the right A1 thickness, natural oxidation creates a clean and specular CoFe /AlOx interface very similar to the best achievable CoFe/vacuum interface. For thicker A1, natural oxidation leaves behind underoxidized AlOx and most importantly an interdiffused CoFe /Al interface. Using 2Torr×150-s natural oxidation, we have fabricated magnetic tunnel junctions (MTJs) with a peak tunnel magnetoresistance (TMR) of 18% for a resistance area product of 7Ωμm2, at the A1 metal thickness of 6 Å. With the same oxidation process TMR drops to only 8% when A1 is increased to 9 Å. Contrary to the accepted view, we do not attribute this TMR drop to A1 underoxidation, but primarily to the interdiffusion at the CoFe /Al interface. This assertion is strongly supported by a second set of MTJs differing only by the insertion of a nano-oxide layer (NOL) on top of CoFe. In this case when Al is increased from 6 to 9 Å, the TMR does not drop but increases from 16% to 27%. This is significant because NOL is found to effectively prevent Al diffusion into CoFe. NOL is also found to act as a reservoir of oxygen, which is subsequently consumed by Al.

Modeling of aluminum/gallium interdiffusion in aluminum gallium arsenide/gallium arsenide heterostructure materials

NASA Astrophysics Data System (ADS)

Tai, Cheng-Yu

There is considerable interest in interdiffusion in III-IV based structures, such as AlGaAs/GaAs heterojunctions and superlattices (SL). This topic is of practical and fundamental interest since it relates to the stability of devices based on superlattices and heterojunctions, as well as to fundamental diffusion theory. The main goals of this study are to obtain the Al/Ga interdiffusivity, to understand Al/Ga interdiffusion behavior, and to understand how Si doping enhances the diffusion in AlGaAs/GaAs structures. Our first approach entails experimental studies of Al/Ga interdiffusion using Molecular Beam Epitaxy (MBE) samples of AlGaAs/GaAs structures, with or without Si doping. SUPREM-IV.GS was used to model the Fermi-level dependencies and extract the diffusivities. The experimental results show that Al/Ga interdiffusion in undoped AlGaAs/GaAs structures is small, but can be greatly enhanced in doped materials. The extracted Al/Ga interdiffusivity values match well with the Al/Ga interdiffusivity values reported by other groups, and they appear to be composition-independent. The interdiffusivity values are smaller than published Ga self-diffusivity values which are often mistakenly assumed to be equivalent to the interdiffusivity. Another set of Al/Ga interdiffusion experiments using AlAs/GaAs SL were performed to study Al/Ga interdiffusion. The experimental results are consistent with the previously discussed heterostructure results. Using Darken's analysis and treating the AlAs/GaAs SL material as a non-ideal solution, ALAMODE was used to model our SL disordering results explicitly. Assuming that the Al/Ga interdiffusivity is different from the Ga and Al self-diffusivities, we extracted the Al self-diffusivity and the Al activity coefficient as a function of composition using published Ga self-diffusivity values. The simulation results fit well with the experimental results. The extracted Al self-diffusivity value is close to the extracted Al/Ga interdiffusivity but different from the Ga self-diffusivity. The last part of this thesis focuses on modeling localized Al/Ga disordering in AlGaAs/GaAs devices. We present a localized disordering process as a solution to controlling the lateral oxidation process in AlGaAs/GaAs materials. SUPREM can predict these localized disordering results and can help to design an annealing process corresponding to the required aperture size in devices.

Dynamics of polyelectrolyte adsorption on surfaces: Applications in the detection of iron in water

NASA Astrophysics Data System (ADS)

Gammana, Madhira N.

Layer by layer (LbL) self assembly is a simple multilayer thin (nanometer scale) film fabricating technique. The mechanism of film growth remains a topic of much controversy. For example, several models have been proposed to explain the origin of linear and exponential film growth that are attributed to differences in the dynamic processes that occur at the molecular level during film formation. The problem is that there are no methods that directly measure the dynamics of polymer formation during LbL film formation. In this thesis, I describe the essential elements of an ATR-IR spectroscopic method that was developed to enable measurement of the dynamics of the mass adsorbed and polyelectrolyte conformation during the formation of PEM's. In particular, I followed the sequential adsorption of Sodium polyacrylate (NaPA) and Poly (diallyldimethylammonium) chloride (PDADMAC) from deionized (DI) water and as a function of ionic strength to show that polymer diffusion occurs between layers when adsorbed from DI water. In contrast, a denser layer occurs with no polymer interdiffusion for deposition from 0.02M ionic strength solutions of NaPA and PDADMAC. While the mass deposited increased with ionic strength, linear multilayer growth in films were observed in all cases. This finding disputes a common viewpoint that interdiffusion of polymer layers is a key feature of exponential film growth. The theme of polymer layer adsorption was used in the detection of Fe 3+ in seawater. A new approach, developed previously in Tripp's group, utilized "vertical amplification" in which a block copolymer assembled on membranes provided multiple anchoring points extending from the surface for attaching a siderophore, desferrioxamine B (DFB). The Fe3+ chelates with the siderophore producing a red color that can be quantified by visible spectroscopy. However, the rate of Fe3+ uptake was found to be dependent on flow rate. The origin of this flow rate dependence was identified by the work presented in this thesis. It was found that the amount and rate of Fe3+ uptake was dependent on the relative size of each block in the polymer and the degree of reaction of DFB with the adsorbed layer. In particular, higher amounts and higher rates were obtained when the density of DFB was lowered. This shows that the DFB was sterically hindered from forming a hexacoordinate complex with Fe3+ by the presence of neighboring DFB molecules. This is a key factor that needs to be considered in developing Fe3+ detection systems based on siderophores anchored to surfaces.

The effect of polymer architecture on the interdiffusion in thin polymer films

NASA Astrophysics Data System (ADS)

Caglayan, Ayse; Yuan, Guangcui; Satija, Sushil K.; Uhrig, David; Hong, Kunlun; Akgun, Bulent

Branched polymer chains have been traditionally used in industrial applications as additives. Recently they have found applications in electrochromic displays, lithography, biomedical coatings and targeting multidrug resistant bacteria. In some of these applications where they are confined in thin layers, it is important to understand the relation between the mobility and polymer chain architecture to optimize the processing conditions. Earlier interdiffusion measurements on linear and cyclic polymer chains demonstrated the key role of chain architecture on mobility. We have determined the vertical diffusion coefficients of the star polystyrene chains in thin films as a function of number of polymer arms, molecular weight per arm, and film thickness using neutron reflectivity (NR) and compare our results with linear chains of identical total molecular weight. Bilayer samples of 4-arm and 8-arm protonated polystyrenes (hPS) and deuterated polystyrenes (dPS) were used to elucidate the effect of polymer chain architecture on polymer diffusion. NR measurements indicate that the mobility of polymer chains in thin films get faster as the number of polymer arms increases and the arm molecular weight decreases. Both star polymers showed faster interdiffusion compared to their linear analog. Diffusion coefficient of branched PS chains has a weak dependence on the film thickness.

Inter-diffusion analysis of joint interface of tungsten-rhenium couple

NASA Astrophysics Data System (ADS)

Hua, Y. F.; Li, Z. X.; Zhang, X.; Du, J. H.; Huang, C. L.; Du, M. H.

2011-09-01

The tungsten-rhenium couple was prepared by using glow plasma physical vapor deposition (PVD) on the isotropic fine grained graphite (IG) substrates. Diffusion anneals of the tungsten-rhenium couple were conducted at the temperature from 1100 °C to 1400 °C to investigate the inter-diffusion behaviors. The results showed that the thickness of the inter-diffusion zone increased with increasing annealing temperature. The relationship between the inter-diffusion coefficient and the annealing temperature accorded with the Arrhenius manner. The value of inter-diffusion activation energies was 189 kJ/mole (1.96 eV). The service time of tungsten-rhenium multilayer diffusion barrier was limited by the inter-diffusion for rhenium and tungsten rather than the diffusion of carbon in rhenium.

Interdiffusion in Ternary Magnesium Solid Solutions of Aluminum and Zinc

DOE PAGES

Kammerer, Catherine; Kulkarni, Nagraj S; Warmack, Robert J Bruce; ...

2016-01-11

Al and Zn are two of the most common alloying elements in commercial Mg alloys, which can improve the physical properties through solid solution strengthening and precipitation hardening. Diffusion plays a key role in the kinetics of these and other microstructural design relevant to Mg-alloy development. However, there is a lack of multicomponent diffusion data available for Mg alloys. Through solid-to-solid diffusion couples, diffusional interactions of Al and Zn in ternary Mg solid-solution at 400° and 450 °C were examined by an extension of the Boltzmann-Matano analysis based on Onsager s formalism. Concentration profiles of Mg-Al-Zn ternary alloys were determinedmore » by electron probe microanalysis, and analyzed to determine the ternary interdiffusion coefficients as a function of composition. Zn was determined to interdiffuse the fastest, followed by Mg and Al. Appreciable diffusional interactions among Mg, Al, and Zn were observed by variations in sign and magnitude of cross interdiffusion coefficients. In particular, Zn was found to significantly influence the interdiffusion of Mg and Al significantly: the and ternary cross interdiffusion coefficients were both negative, and large in magnitude, in comparison to and , respectively. Al and Mg were observed influence the interdiffusion of Mg and Al, respectively, with positive and interdiffusion coefficients, but their influence on the Zn interdiffusion was negligible.« less

Interdiffusion-driven synthesis of tetragonal chromium (III) oxide on BaTi O3

NASA Astrophysics Data System (ADS)

Asa, M.; Vinai, G.; Hart, J. L.; Autieri, C.; Rinaldi, C.; Torelli, P.; Panaccione, G.; Taheri, M. L.; Picozzi, S.; Cantoni, M.

2018-03-01

Interfaces play a crucial role in the study of novel phenomena emerging at heterostructures comprising metals and functional oxides. For this reason, attention should be paid to the interface chemistry, which can favor the interdiffusion of atomic species and, under certain conditions, lead to the formation of radically different compounds with respect to the original constituents. In this work, we consider Cr/BaTi O3 heterostructures grown on SrTi O3 (100) substrates. Chromium thin films (1-2 nm thickness) are deposited by molecular beam epitaxy on the BaTi O3 layer, and subsequently annealed in vacuum at temperatures ranging from 473 to 773 K. A disordered metallic layer is detected for annealing temperatures up to 573 K, whereas, at higher temperatures, we observe a progressive oxidation of chromium, which we relate to the thermally activated migration of oxygen from the substrate. The chromium oxidation state is +3 and the film shows a defective rocksalt structure, which grows lattice matched on the underlying BaTi O3 layer. One out of every three atoms of chromium is missing, producing an uncommon tetragonal phase with C r2O3 stoichiometry. Despite the structural difference with respect to the ordinary corundum α-C r2O3 phase, we demonstrate both experimentally and theoretically that the electronic properties of the two phases are, to a large extent, equivalent.

Transport properties of ultra-thin VO{sub 2} films on (001) TiO{sub 2} grown by reactive molecular-beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paik, Hanjong; Tashman, Joshua W.; Moyer, Jarrett A.

2015-10-19

We report the growth of (001)-oriented VO{sub 2} films as thin as 1.5 nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy of the (001) VO{sub 2} surface. Another key limitation is interdiffusion with the (001) TiO{sub 2} substrate, which we quantify using low angle annular dark field scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy. We find that controlling island coalescence on the (001) surface and minimization of cation interdiffusion bymore » using a low growth temperature followed by a brief anneal at higher temperature are crucial for realizing ultrathin VO{sub 2} films with abrupt MIT behavior.« less

The Influence of a TiN Film on the Electronic Contribution to the Thermal Conductivity of a TiC Film in a TiN-TiC Layer System

NASA Astrophysics Data System (ADS)

Jagannadham, K.

2018-01-01

TiC and TiN films were deposited by reactive magnetron sputtering on Si substrates. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterization of the microstructure and interface structure have been carried out and the stoichiometric composition of TiC is determined. Thermal conductivity and interface thermal conductance between different layers in the films are evaluated by the transient thermo reflectance (TTR) and three-omega (3- ω) methods. The results showed that the thermal conductivity of the TiC films increased with temperature. The thermal conductivity of TiC in the absence of TiN is dominated by phonon contribution. The electronic contribution to the thermal conductivity of TiC in the presence of TiN is found to be more significant. The interface thermal conductance of the TiC/TiN interface is much larger than that of interfaces at Au/TiC, TiC/Si, or TiN/Si. The interface thermal conductance between TiC and TiN is reduced by the layer formed as a result of interdiffusion.

Controllable Growth of Perovskite Films by Room-Temperature Air Exposure for Efficient Planar Heterojunction Photovoltaic Cells

DOE PAGES

Yang, Bin; Dyck, Ondrej; Poplawsky, Jonathan; ...

2015-12-01

A two-step-solution-processing approach has been established to grow void-free perovskite films for low-cost and high-performance planar heterojunction photovoltaic devices. We generally applied a high-temperature thermal annealing treatment in order to drive the diffusion of CH 3NH 3I precursor molecules into the compact PbI 2 layer to form perovskite films. But, thermal annealing for extended periods would lead to degraded device performance due to the defects generated by decomposition of perovskite into PbI 2. In this work, we explored a controllable layer-by-layer spin-coating method to grow bilayer CH 3NH 3I/PbI 2 films, and then drive the interdiffusion between PbI 2 andmore » CH 3NH 3I layers by a simple room-temperature-air-exposure for making well-oriented, highly-crystalline perovskite films without thermal annealing. This high degree of crystallinity resulted in a carrier diffusion length of ~ 800 nm and high device efficiency of 15.6%, which is comparable to the reported values from thermally-annealed perovskite films based counterparts. Finally, the simplicity and high device performance of this processing approach is highly promising for direct integration into industrial-scale device manufacture.« less

An ESEM investigation of latex film formation in cement pore solution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gretz, M.; Plank, J., E-mail: sekretariat@bauchemie.ch.tum.d

2011-02-15

Environmental scanning electron microscopy (ESEM) and complementary methods were employed to study the time dependent film formation of a latex dispersion in water and cement pore solution. First, a model carboxylated styrene/n-butyl acrylate latex dispersion possessing a minimum film forming temperature (MFFT) of 18 {sup o}C was synthesized in aqueous media via emulsion polymerization. Its film forming property was at a temperature of 40 {sup o}C, studied under an ESEM. The analysis revealed that upon removal of water, film formation occurs as a result of particle packing, particle deformation and finally particle coalescence. Film formation is significantly retarded when themore » latex dispersion is present in cement pore solution. This effect can be ascribed to adsorption of Ca{sup 2+} ions onto the surface of the anionic latex particles and to interfacial secondary phases. This layer of adsorbed Ca{sup 2+} ions hinders interdiffusion of the macromolecules and subsequent film formation of the latex polymer.« less

Low-temperature direct heterogeneous bonding of polyether ether ketone and platinum.

PubMed

Fu, Weixin; Shigetou, Akitsu; Shoji, Shuichi; Mizuno, Jun

2017-10-01

Direct heterogeneous bonding between polyether ether ketone (PEEK) and Pt was realized at the temperatures lower than 150°C. In order to create sufficient bondability to diverse materials, the surface was modified by vacuum ultraviolet (VUV) irradiation, which formed hydrate bridges. For comparison, direct bonding between surfaces atomically cleaned via Ar fast atom bombardment (FAB) was conducted in a vacuum. The VUV irradiation was found to be effective for creating an ultrathin hydrate bridge layer from the residual water molecules in the chamber. Tight bonds were formed through dehydration of the hydrate bridges by heating at 150°C, which also contributed to enhancing interdiffusion across the interface. The VUV-modified surfaces showed bondability as good as that of the FAB-treated surfaces, and the VUV-modified samples had shear strengths at the same level as those of FAB-treated surfaces. This technology will be of practical use in the packaging of lightweight, flexible biomedical devices. Copyright © 2017 Elsevier B.V. All rights reserved.

Correlative tomography at the cathode/electrolyte interfaces of solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Wankmüller, Florian; Szász, Julian; Joos, Jochen; Wilde, Virginia; Störmer, Heike; Gerthsen, Dagmar; Ivers-Tiffée, Ellen

2017-08-01

This paper introduces a correlative tomography technique. It visualizes the spatial organization of primary and secondary phases at the interface of La0.58Sr0.4Co0.2Fe0.8O3-δ cathode/10 mol% Gadolinia doped Ceria/8 mol% Yttria stabilized Zirconia electrolyte. It uses focused ion beam/scanning electron microscope tomography (FIB/SEM), and combines data sets from Everhart-Thornley and Inlens detector differentiating four primary and two secondary material phases. In addition, grayscale information is correlated to elemental distribution gained by energy dispersive X-ray spectroscopy in a scanning transmission electron microscope. Interdiffusion of GDC into YSZ and SrZrO3 as secondary phases depend (in both amount and spatial organization) on the varied co-sintering temperature of the GDC/YSZ electrolyte. The ion-blocking SrZrO3 forms a continuous layer on top of the temperature-dependent GDC/YSZ interdiffusion zone (ID) at and below a co-sintering temperature of 1200 °C; above it becomes intermittent. 2D FIB/SEM images of primary and secondary phases at 1100, 1200, 1300 and 1400 °C were combined with a 3D FIB/SEM reconstruction (1300 °C). This reveals that ;preferred; oxygen ion transport pathways from the LSCF cathode through GDC and the ID into the YSZ electrolyte only exist in samples sintered above 1200 °C. The applied correlative technique expands our understanding of this multiphase cathode/electrolyte interface region.

Optical characteristics of bismuth sulfide (Bi2S3) thin films.

NASA Astrophysics Data System (ADS)

Mahmoud, S.; Eid, A. H.; Omar, H.

Thin films of bismuth sulfide (Bi2S3) were grown by two deposition techniques, by thermal evaporation and by chemical deposition. The thermally deposited reactions consisted in depositing the individual elements, namely bismuth and sulfur, sequentially from a tungsten boat source and allowing the layers to interdiffuse to form the compound during the heat-treatment. The chemical deposition was based on the reaction between the triethanolamine compex of Bi3+ ions and thiourea in basic media. Scanning electron microscope and X-ray diffraction analysis were made on as-deposited and on annealed films to determine their structure. The different electronic transitions and the optical constants are determined from the transmision and reflection data of these thin films for normal incidence. The optical gaps of Bi2S3 films show a remarkable dependence on the preparation method.

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

PubMed

Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

2014-03-26

We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

Interfacial mixing in as-deposited Si/Ni/Si layers analyzed by x-ray and polarized neutron reflectometry

NASA Astrophysics Data System (ADS)

Bhattacharya, Debarati; Basu, Saibal; Singh, Surendra; Roy, Sumalay; Dev, Bhupendra Nath

2012-12-01

Interdiffusion occurring across the interfaces in a Si/Ni/Si layered system during deposition at room temperature was probed using x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Exploiting the complementarity of these techniques, both structural and magnetic characterization with nanometer depth resolution could be achieved. Suitable model fitting of the reflectivity profiles identified the formation of Ni-Si mixed alloy layers at the Si/Ni and Ni/Si interfaces. The physical parameters of the layered structure, including quantitative assessment of the stoichiometry of interfacial alloys, were obtained from the analyses of XRR and PNR patterns. In addition, PNR provided magnetic moment density profile as a function of depth in the stratified medium.

Modulation of Morphology and Optical Property of Multi-Metallic PdAuAg and PdAg Alloy Nanostructures.

PubMed

Pandey, Puran; Kunwar, Sundar; Sui, Mao; Bastola, Sushil; Lee, Jihoon

2018-05-16

In this work, the evolution of PdAg and PdAuAg alloy nanostructures is demonstrated on sapphire (0001) via the solid-state dewetting of multi-metallic thin films. Various surface configurations, size, and arrangements of bi- and tri-metallic alloy nanostructures are fabricated as a function of annealing temperature, annealing duration, film thickness, and deposition arrangements such as bi-layers (Pd/Ag), tri-layers (Pd/Au/Ag), and multi-layers (Pd/Au/Ag × 5). Specifically, the tri-layers film shows the gradual evolution of over-grown NPs, voids, wiggly nanostructures, and isolated PdAuAg alloy nanoparticles (NPs) along with the increased annealing temperature. In contrast, the multi-layers film with same thickness show the enhanced dewetting rate, which results in the formation of voids at relatively lower temperature, wider spacing, and structural regularity of alloy NPs at higher temperature. The dewetting enhancement is attributed to the increased number of interfaces and reduced individual layer thickness, which aid the inter-diffusion process at the initial stage. In addition, the time evolution of the Pd 150 nm /Ag 80 nm bi-layer films at constant temperature show the wiggly-connected and isolated PdAg alloy NPs. The overall evolution of alloy NPs is discussed based on the solid-state dewetting mechanism in conjunction with the diffusion, inter-diffusion, alloying, sublimation, Rayleigh instability, and surface energy minimization. Depending upon their surface morphologies, the bi- and tri-metallic alloy nanostructures exhibit the dynamic reflectance spectra, which show the formation of dipolar (above 700 nm) and quadrupolar resonance peaks (~ 380 nm) and wide dips in the visible region as correlated to the localized surface plasmon resonance (LSPR) effect. An absorption dip is readily shifted from ~ 510 to ~ 475 nm along with the decreased average size of alloy nanostructures.

Modulation of Morphology and Optical Property of Multi-Metallic PdAuAg and PdAg Alloy Nanostructures

NASA Astrophysics Data System (ADS)

Pandey, Puran; Kunwar, Sundar; Sui, Mao; Bastola, Sushil; Lee, Jihoon

2018-05-01

In this work, the evolution of PdAg and PdAuAg alloy nanostructures is demonstrated on sapphire (0001) via the solid-state dewetting of multi-metallic thin films. Various surface configurations, size, and arrangements of bi- and tri-metallic alloy nanostructures are fabricated as a function of annealing temperature, annealing duration, film thickness, and deposition arrangements such as bi-layers (Pd/Ag), tri-layers (Pd/Au/Ag), and multi-layers (Pd/Au/Ag × 5). Specifically, the tri-layers film shows the gradual evolution of over-grown NPs, voids, wiggly nanostructures, and isolated PdAuAg alloy nanoparticles (NPs) along with the increased annealing temperature. In contrast, the multi-layers film with same thickness show the enhanced dewetting rate, which results in the formation of voids at relatively lower temperature, wider spacing, and structural regularity of alloy NPs at higher temperature. The dewetting enhancement is attributed to the increased number of interfaces and reduced individual layer thickness, which aid the inter-diffusion process at the initial stage. In addition, the time evolution of the Pd150 nm/Ag80 nm bi-layer films at constant temperature show the wiggly-connected and isolated PdAg alloy NPs. The overall evolution of alloy NPs is discussed based on the solid-state dewetting mechanism in conjunction with the diffusion, inter-diffusion, alloying, sublimation, Rayleigh instability, and surface energy minimization. Depending upon their surface morphologies, the bi- and tri-metallic alloy nanostructures exhibit the dynamic reflectance spectra, which show the formation of dipolar (above 700 nm) and quadrupolar resonance peaks ( 380 nm) and wide dips in the visible region as correlated to the localized surface plasmon resonance (LSPR) effect. An absorption dip is readily shifted from 510 to 475 nm along with the decreased average size of alloy nanostructures.

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

NASA Astrophysics Data System (ADS)

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

2018-05-01

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

Composite construction for nuclear fuel containers

DOEpatents

Cheng, Bo-Ching [Fremont, CA; Rosenbaum, Herman S [Fremont, CA; Armijo, Joseph S [Saratoga, CA

1987-01-01

An improved method for producing nuclear fuel containers of a composite construction having components providing therein a barrier system for resisting destructive action by volatile fission products or impurities and also interdiffusion of metal constituents, and the product thereof. The composite nuclear fuel containers of the method comprise a casing of zirconium or alloy thereof with a layer of copper overlying an oxidized surface portion of the zirconium or alloy thereof.

Slurry erosion induced surface nanocrystallization of bulk metallic glass

NASA Astrophysics Data System (ADS)

Ji, Xiulin; Wu, Jili; Pi, Jinghong; Cheng, Jiangbo; Shan, Yiping; Zhang, Yingtao

2018-05-01

Microstructure evolution and phase transformation of metallic glasses (MGs) could occur under heating condition or mechanical deformation. The cross-section of as-cast Zr55Cu30Ni5Al10 MG rod was impacted by the solid particles when subjected to erosion in slurry flow. The surface microstructure was observed by XRD before and after slurry erosion. And the stress-driven de-vitrification increases with the increase of erosion time. A microstructure evolution layer with 1-2 μm thickness was formed on the topmost eroded surface. And a short range atomic ordering prevails in the microstructure evolution layer with crystalline size around 2-3 nm embedded in the amorphous matrix. The XPS analysis reveals that most of the metal elements in the MG surface, except for Cu, were oxidized. And a composite layer with ZrO2 and Al2O3 phases were formed in the topmost surface after slurry erosion. The cooling rate during solidification of MG has a strong influence on the slurry erosion induced nanocrystallization. And a lower cooling rate favors the surface nanocrystallization because of lower activation energy and thermo-stability. Finally, the slurry erosion induced surface nanocrystallization and microstructure evolution result in surface hardening and strengthening. Moreover, the microstructure evolution mechanisms were discussed and it is related to the cooling rate of solidification and the impact-induced temperature rise, as well as the combined effects of the impact-induced plastic flow, inter-diffusion and oxidation of the metal elements.

Microstructural Development and Ternary Interdiffusion in Ni-Mn-Ga Alloys

NASA Astrophysics Data System (ADS)

Zhou, Le; Kammerer, Catherine; Giri, Anit; Cho, Kyu; Sohn, Yongho

2015-12-01

NiMnGa alloys functioning as either ferromagnetic shape memory alloys or magnetocaloric materials have both practical applications and fundamental research value. In this study, solid-to-solid diffusion couple experiments were carried out to investigate the phase equilibria, microstructural development, and interdiffusion behavior in Ni-Mn-Ga ternary alloys. Selected diffusion couples between pure Ni, Ni25Mn75 and four ternary off-stoichiometric NiMnGa alloys ( i.e., Ni52Mn18Ga30, Ni46Mn30Ga24, Ni52Mn30Ga18, Ni58Mn18Ga24) were assembled and annealed at 1073 K, 1123 K, and 1173 K (800 °C, 850 °C, and 900 °C) for 480, 240, and 120 hours, respectively. At these high temperatures, the β NiMnGa phase has a B2 crystal structure. The microstructure of the interdiffusion zone was examined by scanning electron microscopy and transmission electron microscopy. Concentration profiles across the interdiffusion zone were determined by electron probe micro analysis. Solubility values obtained for various phases were mostly consistent with the existing isothermal phase diagrams, but the phase boundary of the γ(Mn) + β two-phase region was slightly modified. In addition, equilibrium compositions for the γ(Ni) and α' phases at 1173 K (900 °C) were also determined for the respective two-phase region. Both austenitic and martensitic phases were found at room temperature in each diffusion couple with a clear boundary. The compositions at the interfaces corresponded close to valence electron concentration (e/a) of 7.6, but trended to lower values when Mn increased to more than 35 at. pct. Average effective interdiffusion coefficients for the β phase over different compositional ranges were determined and reported in the light of temperature-dependence. Ternary interdiffusion coefficients were also determined and examined to assess the ternary diffusional interactions among Ni, Mn, and Ga. Ni was observed to interdiffuse the fastest, followed by Mn then Ga. Interdiffusion flux of Ni also has strong influences on the interdiffusion of Mn and Ga with large and negative cross interdiffusion coefficients, tilde{D}_{MnNi}^{Ga} and tilde{D}_{GaNi}^{Mn} . The tilde{D}_{NiNi}^{Ga} and tilde{D}_{MnMn}^{Ga} ternary interdiffusion coefficients exhibited minimum values near 52 at. pct Ni concentration.

Minimization of material inter-diffusion for thermally stable quaternary-capped InAs quantum dot via strain modification

NASA Astrophysics Data System (ADS)

Ghadi, Hemant; Sehara, Navneet; Murkute, Punam; Chakrabarti, Subhananda

2017-05-01

In this study, a theoretical model is developed for investigating the effect of thermal annealing on a single-layer quaternary-capped (In0.21Al0.21Ga0.58As) InAs quantum dot heterostructure (sample A) and compared to a conventional GaAs-capped sample (sample B). Strain, an interfacial property, aids in dot formation; however, it hinders interdiffusion (up to 650 °C), rendering thermal stability to heterostructures. Three diffusing species In/Al/Ga intermix because of the concentration gradient and temperature variation, which is modeled by Fick's law of diffusion. Ground-state energy for both carriers (electron and holes) is calculated by the Schrodinger equation at different annealing temperatures, incorporating strain computed by the concentration-dependent model. Change in activation energy due to strain decreases particle movement, thereby resulting in thermally stable structures at low annealing temperatures. At low temperature, the conduction band near the dot edge slightly decreases, attributed to the comparatively high strain. Calculated results are consistent with the experimental blue-shift i.e. towards lower wavelength of photoluminescence peak on the same sample with increasing annealing temperatures. Cross-sectional transmission microscopy (TEM) images substantiate the existence of dot till 800 °C for sample (A). With increasing annealing temperature, interdiffusion and dot sublimation are observed in XTEM images of samples A and B. Strain calculated from high-resolution X-ray diffraction (HRXRD) peaks and its decline with increasing temperature are in agreement with that calculated by the model. For highlighting the benefits of quaternary capping, InAlGaAs capping is theoretically and experimentally compared to GaAs capping. Concentration-dependent strain energy is calculated at every point and is further used for computing material interdiffusion, band profiles, and photoluminescence peak wavelength, which can provide better insights into strain energy behavior with temperature and help in the better understanding of thermal annealing.

Perpendicular Growth Characteristics of Cu-Sn Intermetallic Compounds at the Surface of 99Sn-1Cu/Cu Solder Interconnects

NASA Astrophysics Data System (ADS)

Chen, Zhiwen; Liu, Changqing; Wu, Yiping; An, Bing

2015-12-01

The growth of intermetallic compounds (IMCs) on the free surface of 99Sn-1Cu solder joints perpendicular to the interdiffusion direction has been investigated in this work. The specimens were specifically designed and polished to reveal a flat free surface at the solder/Cu interface for investigation. After aging at 175°C for progressively increased durations, the height of the perpendicular IMCs was examined and found to follow a parabolic law with aging duration that could be expressed as y = 0.11√ t, where t is the aging duration in hours and y is the height of the perpendicular IMCs in μm. For comparison, the planar growth of IMCs along the interdiffusion direction was also investigated in 99Sn-1Cu/Cu solder joints. After prolonged aging at 175°C, the thickness of the planar interfacial IMC layers also increased parabolically with aging duration and could be expressed as h_{{IMC}} = 0.27√ t + 4.6, where h is the thickness in μm and t is the time in hours. It was found that both the planar and perpendicular growth of the IMCs were diffusion-controlled processes, but the perpendicular growth of the IMCs was much slower than their planar growth due to the longer diffusion distance. It is proposed that Cu3Sn forms prior to the formation of Cu6Sn5 in the perpendicular IMCs, being the reverse order compared with the planar IMC growth.

Composite construction for nuclear fuel containers

DOEpatents

Cheng, B. C.; Rosenbaum, H. S.; Armijo, J. S.

1987-04-21

Disclosed is an improved method for producing nuclear fuel containers of a composite construction having components providing therein a barrier system for resisting destructive action by volatile fission products or impurities and also interdiffusion of metal constituents, and the product thereof. The composite nuclear fuel containers of the method comprise a casing of zirconium or alloy thereof with a layer of copper overlying an oxidized surface portion of the zirconium or alloy thereof. 1 fig.

Radiation effects on interface reactions of U/Fe, U/(Fe+Cr), and U/(Fe+Cr+Ni)

DOE PAGES

Shao, Lin; Chen, Di; Wei, Chaochen; ...

2014-10-01

We study the effects of radiation damage on interdiffusion and intermetallic phase formation at the interfaces of U/Fe, U/(Fe + Cr), and U/(Fe + Cr + Ni) diffusion couples. Magnetron sputtering is used to deposit thin films of Fe, Fe + Cr, or Fe + Cr + Ni on U substrates to form the diffusion couples. One set of samples are thermally annealed under high vacuum at 450 C or 550 C for one hour. A second set of samples are annealed identically but with concurrent 3.5 MeV Fe++ ion irradiation. The Fe++ ion penetration depth is sufficient to reachmore » the original interfaces. Rutherford backscattering spectrometry analysis with high fidelity spectral simulations is used to obtain interdiffusion profiles, which are used to examine differences in U diffusion and intermetallic phase formation at the buried interfaces. For all three diffusion systems, Fe++ ion irradiations enhance U diffusion. Furthermore, the irradiations accelerate the formation of intermetallic phases. In U/Fe couples, for example, the unirradiated samples show typical interdiffusion governed by Fick’s laws, while the irradiated ones show step-like profiles influenced by Gibbs phase rules.« less

Oxidation behavior of Al/Cr coating on Ti2AlNb alloy at 900 °C

NASA Astrophysics Data System (ADS)

Yang, Zhengang; Liang, Wenping; Miao, Qiang; Chen, Bowen; Ding, Zheng; Roy, Nipon

2018-04-01

In this paper, the Al/Cr coating was fabricated on the surface of Ti2AlNb alloy via rf magnetron sputtering and double glow treatment to enhance oxidation resistance. The protective coating with an outer layer of Al and inner layer of Cr has great bonding strength due to the in-diffusion of Cr and the inter-diffusion between Al and Cr to form Al-Cr alloyed layer which has great hardness. Acoustic emission curve which was detected via WS-2005 scratch tester indicates the bonding strength between Al/Cr coating and substrate is great. Morphology of Ti2AlNb alloy with Al/Cr coating after scratch test shows that the scratch is smooth without disbanding, and the depth and breadth of scratch are changed uniformly. The mass change was reduced after oxidation test due to the Al/Cr protective coating. Isothermal oxidation test at 900 °C was researched. Results indicate that Al/Cr coating provided oxidation resistance of Ti2AlNb alloy with prolonged air exposure at 900 °C. Al2O3 was detected by XRD patterns and SEM images, and was formed on the surface of Ti2AlNb alloy to protect substrate during oxidation test. A certain content of Cr is beneficial for the formation of Al2O3. Besides, Cr2O3 was produced under Al2O3 by outward diffusion of Cr to protect substrate sequentially, no cracks were discovered on Al/Cr protective coating. The process of Ti outward diffusion into surface was suppressive due to integration of Cr-Ti and Al-Ti intermetallics. A steady, adherent and continuous coated layer of Al/Cr on Ti2AlNb alloy increases oxidation resistance.

Kinetics of diffusional droplet growth in a liquid/liquid two-phase system

NASA Technical Reports Server (NTRS)

Baird, James K.

1992-01-01

In the case of the diaphragm cell transport equation where the interdiffusion coefficient is a function of concentration, we have derived an integral of the form, t = B(sub 0) + B(sub L)ln(delta(c)) + B(sub 1)(delta(c)) + B(sub 2)(delta(c))(exp 2) +... where t is the time and (delta(c)) is the concentration difference across the frit. The coefficient, B(sub 0), is a constant of integration, while the coefficient, B(sub L), B(sub 1), B(sub 2), ..., depend in general upon the cell constant, the compartment volumes, the interdiffusion coefficient, and various of its concentration derivatives evaluated at the mean concentration for the cell. Explicit formulae for B(sub L), B(sub 1), B(sub 2), ... are given.

Microstructure characteristics of vacuum glazing brazing joints using laser sealing technique

NASA Astrophysics Data System (ADS)

Liu, Sixing; Yang, Zheng; Zhang, Jianfeng; Zhang, Shanwen; Miao, Hong; Zhang, Yanjun; Zhang, Qi

2018-05-01

Two pieces of plate glass were brazed into a composite of glazing with a vacuum chamber using PbO-TiO2-SiO2-RxOy powder filler alloys to develop a new type of vacuum glazing. The brazing process was carried out by laser technology. The interface characteristics of laser brazed joints formed between plate glass and solder were investigated using optical microscope, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) techniques. The results show that the inter-diffusion of Pb/Ti/Si/O elements from the sealing solder toward the glass and O/Al/Si elements from the glass toward the solder, resulting in a reaction layer in the brazed joints. The microstructure phases of PbTiO3, AlSiO, SiO2 and PbO in the glass/solder interface were confirmed by XRD analysis. The joining of the sealing solder to the glass was realized by the reaction products like fibrous structures on interface, where the wetting layer can help improve the bonding performance and strength between the sealing solder and the plate glass during the laser brazing process.

Effect of Mn Nanoparticles on Interfacial Intermetallic Compound Growth in Low-Ag Sn-0.3Ag-0.7Cu- xMn Solder Joints

NASA Astrophysics Data System (ADS)

Tang, Y.; Luo, S. M.; Li, G. Y.; Yang, Z.; Chen, R.; Han, Y.; Hou, C. J.

2018-02-01

Interfacial intermetallic compound (IMC) growth between Cu substrates and low-Ag Sn-0.3Ag-0.7Cu- xMn ( x = 0 wt.%, 0.02 wt.%, 0.05 wt.%, 0.1 wt.%, and 0.15 wt.%) (SAC0307- xMn) solders was investigated under different isothermal aging temperatures of 100°C, 150°C, and 190°C. Scanning electron microscopy (SEM) was employed to observe the microstructural evolution of the solder joints and measure the IMC layer thickness. The IMC phases were identified by energy-dispersive x-ray spectroscopy and x-ray diffraction. The results showed that a Cu6Sn5 IMC layer formed in the as-soldered solder joints, while a duplex structure consisting of a Cu6Sn5 IMC layer near the solder matrix and a Cu3Sn IMC layer was observed after isothermal aging. A considerable drop in the IMC layer thickness was observed when 0.1 wt.% Mn nanoparticles were added. Beyond this amount, the thickness of the IMC layer only slightly increases. Adding Mn nanoparticles can increase the activation energy and thus reduce the interdiffusion rates of the Sn and Cu atoms, which suppresses excessive IMC growth. The solder joint containing 0.1 wt.% Mn nanoparticles has the highest activation energy. SEM images revealed that the number of small particles precipitated in the channels between the Cu6Sn5 IMC layers increases with an increasing proportion of Mn nanoparticles. Based on the microstructural evolution of the solder joints, this study revealed that grain boundary pinning is one of the most important mechanisms for IMC growth inhibition when Mn nanoparticles are added.

Influence of the Preparation Method on Planar Perovskite CH3NH3PbI3-xClx Solar Cell Performance and Hysteresis

NASA Astrophysics Data System (ADS)

Ivanova, A.; Tokmakov, A.; Lebedeva, K.; Roze, M.; Kaulachs, I.

2017-08-01

Organometal halide perovskites are promising materials for lowcost, high-efficiency solar cells. The method of perovskite layer deposition and the interfacial layers play an important role in determining the efficiency of perovskite solar cells (PSCs). In the paper, we demonstrate inverted planar perovskite solar cells where perovskite layers are deposited by two-step modified interdiffusion and one-step methods. We also demonstrate how PSC parameters change by doping of charge transport layers (CTL). We used dimethylsupoxide (DMSO) as dopant for the hole transport layer (PEDOT:PSS) but for the electron transport layer [6,6]-phenyl C61 butyric acid methyl ester (PCBM)) we used N,N-dimethyl-N-octadecyl(3-aminopropyl)trimethoxysilyl chloride (DMOAP). The highest main PSC parameters (PCE, EQE, VOC) were obtained for cells prepared by the one-step method with fast crystallization and doped CTLs but higher fill factor (FF) and shunt resistance (Rsh) values were obtained for cells prepared by the two-step method with undoped CTLs.

Programmable and electrically controllable light scattering from surface-polymer stabilized liquid crystals.

PubMed

Bédard-Arcand, Jean-Philippe; Galstian, Tigran

2012-08-01

We report the creation and study of a polarization independent light scattering material system based on surface-polymer stabilized liquid crystals. Originally isotropic cell substrates with thin nonpolymerized reactive mesogen layers are used for the alignment of pure nonreactive nematic liquid crystals. The partial interdiffusion of the two materials followed by the application of orienting external electric and magnetic fields and the photo polymerization of the reactive mesogen allow us the control of electro-optic scattering properties of obtained cells.

Contribution of atom-probe tomography to a better understanding of glass alteration mechanisms: Application to a nuclear glass specimen altered 25 years in a granitic environment

DOE PAGES

Gin, Stephane; Ryan, Joseph V.; Schreiber, Daniel K.; ...

2013-04-08

Here, we report and discuss results of atom probe tomography (APT) and energy-filtered transmission electron microscopy (EFTEM) applied to a borosilicate glass sample of nuclear interest altered for nearly 26 years at 90°C in a confined granitic medium in order to better understand the rate-limiting mechanisms under conditions representative of a deep geological repository for vitrified radioactive waste. The APT technique allows the 3D reconstruction of the elemental distribution at the reactive interphase with sub-nanometer precision. Profiles of the B distribution at pristine glass/hydrated glass interface obtained by different techniques are compared to show the challenge of accurate measurements ofmore » diffusion profiles at this buried interface on the nanometer length scale. Our results show that 1) Alkali from the glass and hydrogen from the solution exhibit anti-correlated 15 ± 3 nm wide gradients located between the pristine glass and the hydrated glass layer, 2) boron exhibits an unexpectedly sharp profile located just at the outside of the alkali/H interdiffusion layer; this sharp profile is more consistent with a dissolution front than a diffusion-controlled release of boron. The resulting apparent diffusion coefficients derived from the Li and H profiles are D Li = 1.5 × 10 -22 m 2.s -1 and D H = 6.8 × 10 -23 m 2.s -1. These values are around two orders of magnitude lower than those observed at the very beginning of the alteration process, which suggests that interdiffusion is slowed at high reaction progress by local conditions that could be related to the porous structure of the interphase. As a result, the accessibility of water to the pristine glass could be the rate-limiting step in these conditions. More generally, these findings strongly support the importance of interdiffusion coupled with hydrolysis reactions of the silicate network on the long-term dissolution rate, contrary to what has been suggested by recent interfacial dissolution-precipitation models for silicate minerals.« less

Diffusion behavior of Cu/Ta heterogeneous interface under high temperature and high strain: An atomistic investigation

NASA Astrophysics Data System (ADS)

Li, Ganglong; Wu, Houya; Luo, Honglong; Chen, Zhuo; Tay, Andrew A. O.; Zhu, Wenhui

2017-09-01

Three-dimensional (3D) integration technology using Cu interconnections has emerged as a promising solution to improve the performance of silicon microelectronic devices. However, Cu diffuses into SiO2 and requires a barrier layer such as Ta to ensure acceptable reliability. In this paper, the effects of temperature and strain normal to the interface on the inter-diffusion of Cu and Ta at annealing conditions are investigated using a molecular dynamics (MD) technique with embedded atomic method (EAM) potentials. Under thermal annealing conditions without strain, it is found that a Cu-rich diffusion region approximately 2 nm thick is formed at 1000 K after 10 ns of annealing. Ta is capable of diffusing into the interior of Cu but Cu hardly diffuses into the inner lattice of Ta. At the Cu side near the interface an amorphous structure is formed due to the process of diffusion. The diffusion activation energy of Cu and Ta are found to be 0.9769 and 0.586 eV, respectively. However, when a strain is applied, a large number of crystal defects are generated in the sample. As the strain is increased, extrinsic stacking faults (ESFs) and lots of Shockley partial dislocations appear. The density of the dislocations and the diffusion channels increase, promoting the diffusion of Cu atoms into the inner lattice of Ta. The thickness of the diffusion layer increases to 4 times the value when only a temperature load of 700 K is applied. The MD simulations demonstrated that Ta is very effective as a barrier layer under thermal loading only, and its effectiveness is impaired by tensile strain at the Cu/Ta interface. The simulations also clarified the mechanism that caused the impairment. The methodology and approach described in this paper can be followed further to study the effectiveness of barrier layers under various annealing and strain conditions, and to determine the minimum thickness of barrier layers required for a particular application.

Macroscopic aspects of interfacial reactions

NASA Technical Reports Server (NTRS)

Heckel, R. W.

1976-01-01

The extent of interdiffusion and formation of new phases is determined by the constitution diagram of the alloy system, the interdiffusion coefficients of the phases present, and the thermal conditions (temperature and time) associated with the bonding process and/or subsequent use of the bonded structure. In many instance, the kinetics of interdiffusion and phase formation can be predicted from known parameters using numerical methods and computer techniques. Predictions are compared with experimentally determined parameters for a variety of metallurgical alloy systems.

Alternative buffer layer development in Cu(In,Ga)Se2 thin film solar cells

NASA Astrophysics Data System (ADS)

Xin, Peipei

Cu(In,Ga)Se2-based thin film solar cells are considered to be one of the most promising photovoltaic technologies. Cu(In,Ga)Se2 (CIGS) solar devices have the potential advantage of low-cost, fast fabrication by using semiconductor layers of only a few micrometers thick and high efficiency photovoltaics have been reported at both the cell and the module levels. CdS via chemical bath deposition (CBD) has been the most widely used buffer option to form the critical junction in CIGS-based thin film photovoltaic devices. However, the disadvantages of CdS can’t be ignored - regulations on cadmium usage are getting stricter primarily due to its toxicity and environmental impacts, and the proper handling of the large amount of toxic chemical bath waste is a massive and expensive task. This dissertation is devoted to the development of Cd-free alternative buffer layers in CIGS-based thin film solar cells. Based on the considerations of buffer layer selection criteria and extensive literature review, Zn-compound buffer materials are chosen as the primary investigation candidates. Radio frequency magnetron sputtering is the preferred buffer deposition approach since it’s a clean and more controllable technique compared to CBD, and is readily scaled to large area manufacturing. First, a comprehensive study of the ZnSe1-xOx compound prepared by reactive sputtering was completed. As the oxygen content in the reactive sputtering gas increased, ZnSe1-xOx crystallinity and bandgap decreased. It’s observed that oxygen miscibility in ZnSe was low and a secondary phase formed when the O2 / (O2 + Ar) ratio in the sputtering gas exceeded 2%. Two approaches were proposed to optimize the band alignment between the CIGS and buffer layer. One method focused on the bandgap engineering of the absorber, the other focused on the band structure modification of the buffer. As a result, improved current of the solar cell was achieved although a carrier transport barrier at the junction interface still limited the device performance. Second, an investigation of Zn(S,O) buffer layers was completed. Zn(S,O) films were sputtered in Ar using a ZnO0.7S0.3 compound target. Zn(S,O) films had the composition close to the target with S / (S+O) ratio around 0.3. Zn(S,O) films showed the wurtzite structure with the bandgap about 3.2eV. The champion Cu(In,Ga)Se2 / Zn(S,O) cell had 12.5% efficiency and an (Ag,Cu)(In,Ga)Se2 / Zn(S,O) cell achieved 13.2% efficiency. Detailed device analysis was used to study the Cu(In,Ga)Se2 and (Ag,Cu)(In,Ga)Se2 absorbers, the influence of absorber surface treatments, the effects of device treatments, the sputtering damage and the Na concentration in the absorber. Finally alternative buffer layer development was applied to an innovative superstrate CIGS configuration. The superstrate structure has potential benefits of improved window layer properties, cost reduction, and the possibility to implement back reflector engineering techniques. The application of three buffer layer options - CdS, ZnO and ZnSe was studied and limitations of each were characterized. The best device achieved 8.6% efficiency with a ZnO buffer. GaxOy formation at the junction interface was the main limiting factor of this device performance. For CdS / CIGS and ZnSe / CIGS superstrate devices extensive inter-diffusion between the absorber and buffer layer under CIGS growth conditions was the critical problem. Inter-diffusion severely deteriorated the junction quality and led to poorly behaved devices, despite different efforts to optimize the fabrication process.

Strain dynamics during La{sub 2}O{sub 3}/Lu{sub 2}O{sub 3} superlattice and alloy formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Proessdorf, André; Niehle, Michael; Grosse, Frank

The dynamics of strain relaxation and intermixing during molecular beam epitaxy of La{sub 2}O{sub 3} and Lu{sub 2}O{sub 3} superlattices and alloys consisting of both binaries on Si(111) have been studied by real-time in situ grazing incidence x-ray diffraction and high resolution transmission electron microscopy. The presence of both hexagonal and cubic polymorphs of La{sub 2}O{sub 3} influences the epitaxial formation within the superlattice. The process of strain relaxation is closely related to the presence of a (La,Lu){sub 2}O{sub 3} alloy adopting a cubic symmetry. It is formed by interdiffusion of La and Lu atoms reducing internal lattice mismatch withinmore » the superlattice. An interface thickness dominated by interdiffusion regions of about 3 monolayers is determined by high-angle annular dark field scanning transmission electron microscopy.« less

Diffusion Barrier Selection from Refractory Metals (Zr, Mo and Nb) via Interdiffusion Investigation for U-Mo RERTR Fuel Alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

K. Huang; C. Kammerer; D. D. Keiser, Jr.

2014-04-01

U-Mo alloys are being developed as low enrichment monolithic fuel under the Reduced Enrichment for Research and Test Reactor (RERTR) Program. Diffusional interactions between the U-Mo fuel alloy and Al-alloy cladding within the monolithic fuel plate construct necessitate incorporation of a barrier layer. Fundamentally, a diffusion barrier candidate must have good thermal conductivity, high melting point, minimal metallurgical interaction, and good irradiation performance. Refractory metals, Zr, Mo, and Nb are considered based on their physical properties, and the diffusion behavior must be carefully examined first with U-Mo fuel alloy. Solid-to-solid U-10wt.%Mo vs. Mo, Zr, or Nb diffusion couples were assembledmore » and annealed at 600, 700, 800, 900 and 1000 degrees C for various times. The interdiffusion microstructures and chemical composition were examined via scanning electron microscopy and electron probe microanalysis, respectively. For all three systems, the growth rate of interdiffusion zone were calculated at 1000, 900 and 800 degrees C under the assumption of parabolic growth, and calculated for lower temperature of 700, 600 and 500 degrees C according to Arrhenius relationship. The growth rate was determined to be about 10 3 times slower for Zr, 10 5 times slower for Mo and 10 6 times slower for Nb, than the growth rates reported for the interaction between the U-Mo fuel alloy and pure Al or Al-Si cladding alloys. Zr, however was selected as the barrier metal due to a concern for thermo- mechanical behavior of UMo/Nb interface observed from diffusion couples, and for ductile-to-brittle transition of Mo near room temperature.« less

Inter-diffusion of copper and hafnium as studied by x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Pearson, Justin; Chourasia, A. R.

The Cu/Hf interface has been characterized by x-ray photoelectron spectroscopy. Thin films (thicknesses ranging from 100 nm to 150 nm) of hafnium were deposited on a silicon substrate. About 80 nm of copper was then deposited on such samples. The e-beam method was used for the deposition. The samples were annealed for 30 min at temperatures of 100, 200, 300, 400, and 500°C. The inter-diffusion of copper and hafnium was investigated by sequential sputter depth profiling and x-ray photoelectron spectroscopy. The interdiffusion in each case was analyzed by the Matano-Boltzmann's procedure using the Fick's second law. The interdiffusion coefficients and the width of the interface as determined from the data have been correlated with the annealing temperature. Supported by Organized Research, TAMU-Commerce.

Theoretical models for the combustion of alloyable materials

NASA Astrophysics Data System (ADS)

Armstrong, Robert

1992-09-01

The purpose of this work is to extend a theoretical model of layered (laminar) media for SHS combustion presented in an earlier article [1] to explore possible mechanisms for after-burning in SHS ( i.e., gasless) combustion. As before, our particular interest is how the microscopic geometry of the solid reactants is reflected in the combustion wave and in the reaction product. The model is constructed from alternating lamina of two pure reactants that interdiffuse exothermically to form a product. Here, the laminar model is extended to contain layers of differing thicknesses. Using asymptotic theory, it was found that under certain conditions, the combustion wave can become “detached,” and an initial thin flame propagates through the media, leaving a slower, thicker flame following behind ( i.e., afterburning). Thin laminae are consumed in the initial flame and are thick in the secondary. The thin flame has a width determined by the inverse of the activation energy of diffusion, as found previously. The width of the afterburning zone, however, is determined by the absolute time of diffusion for the thicker laminae. Naturally, when the laminae are all the same thickness, there is only one thin flame. The condition for the appearance of afterburning is found to be contingent on the square of the ratio of smallestto-largest thicknesses being considerably less than unity.

Organic solar cells with graded absorber layers processed from nanoparticle dispersions.

PubMed

Gärtner, Stefan; Reich, Stefan; Bruns, Michael; Czolk, Jens; Colsmann, Alexander

2016-03-28

The fabrication of organic solar cells with advanced multi-layer architectures from solution is often limited by the choice of solvents since most organic semiconductors dissolve in the same aromatic agents. In this work, we investigate multi-pass deposition of organic semiconductors from eco-friendly ethanol dispersion. Once applied, the nanoparticles are insoluble in the deposition agent, allowing for the application of further nanoparticulate layers and hence for building poly(3-hexylthiophene-2,5-diyl):indene-C60 bisadduct absorber layers with vertically graded polymer and conversely graded fullerene concentration. Upon thermal annealing, we observe some degrees of polymer/fullerene interdiffusion by means of X-ray photoelectron spectroscopy and Kelvin probe force microscopy. Replacing the common bulk-heterojunction by such a graded photo-active layer yields an enhanced fill factor of the solar cell due to an improved charge carrier extraction, and consequently an overall power conversion efficiency beyond 4%. Wet processing of such advanced device architectures paves the way for a versatile, eco-friendly and industrially feasible future fabrication of organic solar cells with advanced multi-layer architectures.

Screening of Possible Re-Substitutional Elements in Single-Crystal Ni-Based Superalloys: A Viewpoint From Interdiffusion Coefficients in Ni-Al-X Ternaries

NASA Astrophysics Data System (ADS)

Chen, Juan; Zhang, Lijun; Lu, Xiao-Gang

2018-07-01

A popular area of research in the field of high-temperature alloys concerns the search of substitutional elements for Re in order to manufacture single-crystal Ni-based superalloys with less or even no Re addition. To find the elements with similar or even lower diffusion coefficients than Re is an effective strategy. Based on 29 fcc diffusion couples in ternary Ni-Al-X (X = Re, Os, and Ir) systems, high-throughput measurement of composition- and temperature-dependent interdiffusivity matrices was performed using our recently developed numerical inverse method implemented in HitDIC software. The reliability of the determined interdiffusivities was validated by comprehensively comparing the model-predicted composition/interdiffusion flux profiles for each diffusion couple with the corresponding experimental data. Moreover, we also conducted a comparison with the interdiffusivities evaluated using the traditional Matano-Kirkaldy method as well as those from the literature and in boundary binary systems. After that, a comprehensive comparison of the interdiffusion coefficients in fcc Ni-2 wt pct Al-6 wt pct X (X = Ti, Co, Ni, Nb, Mo, Ru, Rh, Ta, W, Re, Os, Ir, and Pt) alloys at 1423 K to 1573 K was conducted. Results indicate that the diffusion rate of Re is lower than that of Os at 1473 K and 1523 K; but higher at 1573 K, while the diffusion rate of Ir is always slightly higher than those of Os and Re at 1473 K to 1573 K. Further analysis of the magnitude of the interdiffusion coefficient correlates with the alloying concentration, activation energy, atomic number, and atomic radius of different diffusing transition metal species ( i.e., Ti, Co, Ni, Nb, Mo, Ru, Rh, Ta, W, Re, Os, Ir, and Pt) was conducted, which is expected to provide useful information regarding element choice in the development of new-generation Ni-based single-crystal superalloys.

Screening of Possible Re-Substitutional Elements in Single-Crystal Ni-Based Superalloys: A Viewpoint From Interdiffusion Coefficients in Ni-Al-X Ternaries

NASA Astrophysics Data System (ADS)

Chen, Juan; Zhang, Lijun; Lu, Xiao-Gang

2018-05-01

A popular area of research in the field of high-temperature alloys concerns the search of substitutional elements for Re in order to manufacture single-crystal Ni-based superalloys with less or even no Re addition. To find the elements with similar or even lower diffusion coefficients than Re is an effective strategy. Based on 29 fcc diffusion couples in ternary Ni-Al-X (X = Re, Os, and Ir) systems, high-throughput measurement of composition- and temperature-dependent interdiffusivity matrices was performed using our recently developed numerical inverse method implemented in HitDIC software. The reliability of the determined interdiffusivities was validated by comprehensively comparing the model-predicted composition/interdiffusion flux profiles for each diffusion couple with the corresponding experimental data. Moreover, we also conducted a comparison with the interdiffusivities evaluated using the traditional Matano-Kirkaldy method as well as those from the literature and in boundary binary systems. After that, a comprehensive comparison of the interdiffusion coefficients in fcc Ni-2 wt pct Al-6 wt pct X (X = Ti, Co, Ni, Nb, Mo, Ru, Rh, Ta, W, Re, Os, Ir, and Pt) alloys at 1423 K to 1573 K was conducted. Results indicate that the diffusion rate of Re is lower than that of Os at 1473 K and 1523 K; but higher at 1573 K, while the diffusion rate of Ir is always slightly higher than those of Os and Re at 1473 K to 1573 K. Further analysis of the magnitude of the interdiffusion coefficient correlates with the alloying concentration, activation energy, atomic number, and atomic radius of different diffusing transition metal species (i.e., Ti, Co, Ni, Nb, Mo, Ru, Rh, Ta, W, Re, Os, Ir, and Pt) was conducted, which is expected to provide useful information regarding element choice in the development of new-generation Ni-based single-crystal superalloys.

Three-Phase Morphology Evolution in Sequentially Solution-Processed Polymer Photodetector: Toward Low Dark Current and High Photodetectivity.

PubMed

Wang, Hanyu; Xing, Shen; Zheng, Yifan; Kong, Jaemin; Yu, Junsheng; Taylor, André D

2018-01-31

Sequentially solution-processed polymer photodetectors (SSP PPDs) based on poly(3-hexylthiophene-2,5-diyl) (P3HT)/[6,6]-phenyl C 71 -butyric acid methyl ester (PC 71 BM) are fabricated by depositing the top layers of PC 71 BM from an appropriate cosolvent of 2-chlorophenol (2-CP)/o-dichlorobenzene (ODCB) onto the predeposited bottom layers of P3HT. By adjusting the ratio of 2-CP/ODCB in the top PC 71 BM layers, the resulting SSP PPD shows a decreased dark current and an increased photocurrent, leading to a maximum detectivity of 1.23 × 10 12 Jones at a wavelength of 550 nm. This value is 5.3-fold higher than that of the conventional bulk heterojunction PPD. Morphology studies reveal that the PC 71 BM partially penetrates the predeposited P3HT layer during the spin-coating process, resulting in an optimal three-phase morphology with one well-mixed interdiffusion P3HT/PC 71 BM phase in the middle of the bulk and two pure phases of P3HT and PC 71 BM at the two electrode sides. We show that the pure phases form high Schottky barriers (>2.0 eV) at the active layer/electrodes interface and efficiently block unfavorable reverse charge carrier injection by significantly decreasing the dark current. The interdiffussion phase enlarges the donor-acceptor interfacial area leading to a large photocurrent. We also reveal that the improved performance of SSP PPDs is also due to the enhanced optical absorption, improved P3HT crystallinity, increased charge carrier mobilities, and suppressed bimolecular recombination.

Matching characteristics of different buffer layers with VO2 thin films

NASA Astrophysics Data System (ADS)

Yang, Kai; Zhang, Dongping; Liu, Yi; Guan, Tianrui; Qin, Xiaonan; Zhong, Aihua; Cai, Xingmin; Fan, Ping; Lv, Weizhong

2016-10-01

VO2 thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF2, Al2O3 and TiO2, respectively. The crystallinity and orientation relationship, thickness of VO2 thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO2 (011). The crystallinity of VO2 films grown on TiO2 buffer layers are superior to VO2 directly deposited on soda-lime glass. The Raman bands of the VO2 films correspond to an Ag symmetry mode of VO2 (M). The sample prepared on 100nm TiO2 buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF2 buffer layer has clear interface with VO2 layer. But there are serious interdiffusion phenomenons between Al2O3, TiO2 buffer layer with VO2 layer.

Solvent-molecule-mediated manipulation of crystalline grains for efficient planar binary lead and tin triiodide perovskite solar cells

NASA Astrophysics Data System (ADS)

Zhu, Leize; Yuh, Brian; Schoen, Stefan; Li, Xinpei; Aldighaithir, Mohammed; Richardson, Beau J.; Alamer, Ahmed; Yu, Qiuming

2016-03-01

Binary lead and tin perovskites offer the benefits of narrower band gaps for broader adsorption of solar spectrum and better charge transport for higher photocurrent density. Here, we report the growth of large, smooth crystalline grains of bianry lead and tin triiodide perovskite films via a two-step solution process with thermal plus solvent vapor-assisted thermal annealing. The crystalline SnxPb1-xI2 films formed in the first step served as the templates for the formation of crystalline CH3NH3SnxPb1-xI3 films during the second step interdiffusion of methylammonium iodide (MAI). Followed by dimethylsulfoxide (DMSO) vapor-assisted thermal annealing, small, faceted perovskite grains grew into large, smooth grains via the possible mechanism involving bond breaking and reforming mediated by DMSO solvent molecules. The absorption onset was extended to 950 and 1010 nm for the CH3NH3SnxPb1-xI3 perovskites with x = 0.1 and 0.25, respectively. The highest PCE of 10.25% was achieved from the planar perovskite solar cell with the CH3NH3Sn0.1Pb0.9I3 layer prepared via the thermal plus DMSO vapor-assisted thermal annealing. This research provides a way to control and manipulate film morphology, grain size, and especially the distribution of metal cations in binary metal perovskite layers, which opens an avenue to grow perovskite materials with desired properties to enhance device performance.Binary lead and tin perovskites offer the benefits of narrower band gaps for broader adsorption of solar spectrum and better charge transport for higher photocurrent density. Here, we report the growth of large, smooth crystalline grains of bianry lead and tin triiodide perovskite films via a two-step solution process with thermal plus solvent vapor-assisted thermal annealing. The crystalline SnxPb1-xI2 films formed in the first step served as the templates for the formation of crystalline CH3NH3SnxPb1-xI3 films during the second step interdiffusion of methylammonium iodide (MAI). Followed by dimethylsulfoxide (DMSO) vapor-assisted thermal annealing, small, faceted perovskite grains grew into large, smooth grains via the possible mechanism involving bond breaking and reforming mediated by DMSO solvent molecules. The absorption onset was extended to 950 and 1010 nm for the CH3NH3SnxPb1-xI3 perovskites with x = 0.1 and 0.25, respectively. The highest PCE of 10.25% was achieved from the planar perovskite solar cell with the CH3NH3Sn0.1Pb0.9I3 layer prepared via the thermal plus DMSO vapor-assisted thermal annealing. This research provides a way to control and manipulate film morphology, grain size, and especially the distribution of metal cations in binary metal perovskite layers, which opens an avenue to grow perovskite materials with desired properties to enhance device performance. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00301j

Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Hong-Ming; Ho, Hao-I; Tsai, Shi-Jane

2016-03-21

We report on the Ge auto-doping and out-diffusion in InGaP epilayer with Cu-Pt ordering grown on 4-in. Ge substrate. Ge profiles determined from secondary ion mass spectrometry indicate that the Ge out-diffusion depth is within 100 nm. However, the edge of the wafer suffers from stronger Ge gas-phase auto-doping than the center, leading to ordering deterioration in the InGaP epilayer. In the edge, we observed a residual Cu-Pt ordering layer left beneath the surface, suggesting that the ordering deterioration takes place after the deposition rather than during the deposition and In/Ga inter-diffusion enhanced by Ge vapor-phase auto-doping is responsible for themore » deterioration. We thus propose a di-vacancy diffusion model, in which the amphoteric Ge increases the di-vacancy density, resulting in a Ge density dependent diffusion. In the model, the In/Ga inter-diffusion and Ge out-diffusion are realized by the random hopping of In/Ga host atoms and Ge atoms to di-vacancies, respectively. Simulation based on this model well fits the Ge out-diffusion profiles, suggesting its validity. By comparing the Ge diffusion coefficient obtained from the fitting and the characteristic time constant of ordering deterioration estimated from the residual ordering layer, we found that the hopping rates of Ge and the host atoms are in the same order of magnitude, indicating that di-vacancies are bound in the vicinity of Ge atoms.« less

InGaAs/GaAs Quantum Dots: Effects of Ensemble Interactions, Interdiffusion, Segregation and Proton Irradiation

NASA Technical Reports Server (NTRS)

Leon, R.

2000-01-01

A sumary or recent experimental findings on the effects of interdiffusion, segregation, strained ensemble interactions and proton irradiation on the optical properties of InGaAs/GaAs quantum dots (QDs) are presented.

Annealing effects in plated-wire memory elements. I - Interdiffusion of copper and Permalloy.

NASA Technical Reports Server (NTRS)

Knudson, C. I.; Kench, J. R.

1971-01-01

Results of investigations using X-ray diffraction and electron-beam microprobe techniques have shown that copper and Permalloy platings interdiffuse at low temperatures when plated-wire memory elements are annealed for times as short as 50 hr. Measurable interdiffusion between Permalloy platings and gold substrates does not occur in similar conditions. Both magnetic and compositional changes during aging are found to occur by a thermally activated process with activation energies around 38 kcal/mol. It is shown, however, that copper-diffusion and magnetic-dispersion changes during aging are merely concurrent processes, neither being the other's cause.

D/H diffusion in serpentine

NASA Astrophysics Data System (ADS)

Pilorgé, Hélène; Reynard, Bruno; Remusat, Laurent; Le Floch, Sylvie; Montagnac, Gilles; Cardon, Hervé

2017-04-01

Interactions between aqueous fluids and ultrabasic rocks are essential processes in a broad range of contexts including hydrothermal alteration on the parent body of carbonaceous chondrites, at mid-oceanic ridge, and in subduction zones. Tracking these processes and understanding reaction kinetics require knowledge of the diffusion of water in rocks, and of isotope fractionation in major minerals forming under hydrous conditions, such as serpentines. We present a study of D/H inter-diffusion in antigorite, a common variety of serpentine. High-temperature (HT) experiments were performed in a belt apparatus at 540˚ C and 3.0 GPa on natural antigorite powders saturated with interstitial D2O. A low-temperature (LT) experiment was performed in diamond anvil cell at 350˚ C and 2.5 GPa on an antigorite single-crystal loaded with pure D2O. D/(D+H) ratios were mapped using Raman spectroscopy for the HT experiment and NanoSIMS for the LT experiment. As antigorite is a phyllosilicate, diffusion coefficients were obtained for crystallographic directions parallel and perpendicular to the antigorite layers (perpendicular and parallel to the c∗-axis, respectively). The equations of D/H inter-diffusion coefficients were determined to be DD/H (m2/s) = 5.04 x 10-5 x exp(-170(±53) (kJ/mol) / RT) and DD/H (m2/s) = 1.52 x 10-7 x exp(-157(±32) (kJ/mol) / RT) perpendicular and along the c∗-axis, respectively, and DD/H (m2/s) = 7.29 x 10-6 x exp(-166(±14) (kJ/mol) / RT) for the bulk diffusivity. These results are similar to those obtained on chlorite, in agreement with the similar crystallographic structures and atomic bonds in the two minerals. Assuming D/H inter-diffusion coefficients for antigorite are the same for all serpentine species, closure temperature and diffusion durations are applied to hydrothermal fields and in CI, CM and CR chondrites. Closure temperatures lie below 300˚ C for terrestrial hydrothermal alteration and depend on serpentine variety because they have different typical grain sizes. They lie below 130˚ C for carbonaceous chondrites, indicating that D/H isotopic exchange may have persisted down to very low temperatures on their parent bodies. D/H isotopic composition may be associated with grain size heterogeneities in carbonaceous chondrites due to protracted alteration of fine-grained material with the lowest closure temperatures (ca 50˚ C).

D/H diffusion in serpentine

NASA Astrophysics Data System (ADS)

Pilorgé, Hélène; Reynard, Bruno; Remusat, Laurent; Le Floch, Sylvie; Montagnac, Gilles; Cardon, Hervé

2017-08-01

Interactions between aqueous fluids and ultrabasic rocks are essential processes in a broad range of contexts including hydrothermal alteration on the parent body of carbonaceous chondrites, at mid-oceanic ridge, and in subduction zones. Tracking these processes and understanding reaction kinetics require knowledge of the diffusion of water in rocks, and of isotope fractionation in major minerals forming under hydrous conditions, such as serpentines. We present a study of D/H inter-diffusion in antigorite, a common variety of serpentine. Experiments were performed in a belt apparatus at 315 °C, 450 °C and 540 °C and at 3.0 GPa on natural antigorite powders saturated with interstitial D2O. An experiment was performed in a diamond anvil cell at 350 °C and 2.5 GPa on an antigorite single-crystal loaded with pure D2O. D/(D + H) ratios were mapped using Raman spectroscopy for the experiments at 315 °C, 450 °C and 540 °C and by NanoSIMS for the experiment at 350 °C. As antigorite is a phyllosilicate, diffusion coefficients were obtained for crystallographic directions parallel and perpendicular to the silicate layers (perpendicular and parallel to the c∗-axis, respectively). Arrhenius relations for D/H inter-diffusion coefficients were determined to be DD/H (m2/s) = 4.71 × 10-2 × exp(-207(-33/+58) (kJ/mol)/RT) and DD/H (m2/s) = 1.61 × 10-4 × exp(-192(-34/+93) (kJ/mol)/RT) perpendicular and parallel to the c∗-axis, respectively, and DD/H (m2/s) = 7.09 × 10-3 × exp(-202(-33/+70) (kJ/mol)/RT) for the bulk diffusivity. Assuming D/H inter-diffusion coefficients for antigorite are the same for all serpentine species, closure temperature and diffusion durations are applied to hydrothermal alteration in the oceanic lithosphere, and in CI, CM and CR chondrites. Closure temperatures lie below 300 °C for terrestrial hydrothermal alteration and depend on serpentine variety because they have different typical grain sizes. Closure temperatures lie below 160 °C for carbonaceous chondrites, indicating that D/H isotopic exchange may have persisted down to very low temperatures in their parent bodies. Local D/H isotopic compositions may be associated with grain size heterogeneities in carbonaceous chondrites due to protracted alteration of fine-grained material with the lowest closure temperatures (ca 80 °C).

Ballistic-Electron-Emission-Microscopy of Strained Si(sub 1-x)Ge(sub x) Layers

NASA Technical Reports Server (NTRS)

Bell, L. D.; Milliken, A. M.; Manion, S. J.; Kaiser, W. J.; Fathauer, R. W.; Pike, W. T.

1994-01-01

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the effects of strain on Si(sub 1-x)Ge(sub x) alloys. Lifting of the degeneracy of the conduction-band minimum of Si(sub 1-x)Ge(sub x), due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. Experimental values for this conduction-band splitting agree well with calculations. In addition, an unexpected heterogeneity in the strain of the Si(sub 1-x)Ge(sub x) layer is introduced by deposition of Au. This effect, not observed with Ag, is attributed to species interdiffusion and has important implications for metal-semiconductor devices based oil pseudomorphic Si(sub 1-x)Ge(sub x)/Si material systems.

The Achievement of Near-Theoretical-Minimum Contact Resistance to InP

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.; Weizer, Victor G.

1993-01-01

We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.

Weld formation during material extrusion additive manufacturing.

PubMed

Seppala, Jonathan E; Hoon Han, Seung; Hillgartner, Kaitlyn E; Davis, Chelsea S; Migler, Kalman B

2017-10-04

Material extrusion (ME) is a layer-by-layer additive manufacturing process that is now used in personal and commercial production where prototyping and customization are required. However, parts produced from ME frequently exhibit poor mechanical performance relative to those from traditional means; moreover, fundamental knowledge of the factors leading to development of inter-layer strength in this highly non-isothermal process is limited. In this work, we seek to understand the development of inter-layer weld strength from the perspective of polymer interdiffusion under conditions of rapidly changing mobility. Our framework centers around three interrelated components: in situ thermal measurements (via infrared imaging), temperature dependent molecular processes (via rheology), and mechanical testing (via mode III fracture). We develop the concept of an equivalent isothermal weld time and test its relationship to fracture energy. For the printing conditions studied the equivalent isothermal weld time for T ref = 230 °C ranged from 0.1 ms to 100 ms. The results of these analysis provide a basis for optimizing inter-layer strength, the limitations of the ME process, and guide development of new materials.

Polycrystalline silicon on tungsten substrates

NASA Technical Reports Server (NTRS)

Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

1979-01-01

Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion

PubMed Central

2014-01-01

Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems. PMID:24994964

Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion.

PubMed

Noh, Jin-Seo

2014-01-01

Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems.

X-ray reflectivity measurement of interdiffusion in metallic multilayers during rapid heating

PubMed Central

Liu, J. P.; Kirchhoff, J.; Zhou, L.; Zhao, M.; Grapes, M. D.; Dale, D. S.; Tate, M. D.; Philipp, H. T.; Gruner, S. M.; Weihs, T. P.; Hufnagel, T. C.

2017-01-01

A technique for measuring interdiffusion in multilayer materials during rapid heating using X-ray reflectivity is described. In this technique the sample is bent to achieve a range of incident angles simultaneously, and the scattered intensity is recorded on a fast high-dynamic-range mixed-mode pixel array detector. Heating of the multilayer is achieved by electrical resistive heating of the silicon substrate, monitored by an infrared pyrometer. As an example, reflectivity data from Al/Ni heated at rates up to 200 K s−1 are presented. At short times the interdiffusion coefficient can be determined from the rate of decay of the reflectivity peaks, and it is shown that the activation energy for interdiffusion is consistent with a grain boundary diffusion mechanism. At longer times the simple analysis no longer applies because the evolution of the reflectivity pattern is complicated by other processes, such as nucleation and growth of intermetallic phases. PMID:28664887

Structural and Thermodynamic Factors of Suppressed Interdiffusion Kinetics in Multi-component High-entropy Materials

PubMed Central

Chang, Shou-Yi; Li, Chen-En; Huang, Yi-Chung; Hsu, Hsun-Feng; Yeh, Jien-Wei; Lin, Su-Jien

2014-01-01

We report multi-component high-entropy materials as extraordinarily robust diffusion barriers and clarify the highly suppressed interdiffusion kinetics in the multi-component materials from structural and thermodynamic perspectives. The failures of six alloy barriers with different numbers of elements, from unitary Ti to senary TiTaCrZrAlRu, against the interdiffusion of Cu and Si were characterized, and experimental results indicated that, with more elements incorporated, the failure temperature of the barriers increased from 550 to 900°C. The activation energy of Cu diffusion through the alloy barriers was determined to increase from 110 to 163 kJ/mole. Mechanistic analyses suggest that, structurally, severe lattice distortion strains and a high packing density caused by different atom sizes, and, thermodynamically, a strengthened cohesion provide a total increase of 55 kJ/mole in the activation energy of substitutional Cu diffusion, and are believed to be the dominant factors of suppressed interdiffusion kinetics through the multi-component barrier materials. PMID:24561911

X-ray reflectivity measurement of interdiffusion in metallic multilayers during rapid heating

DOE PAGES

Liu, J. P.; Kirchhoff, J.; Zhou, L.; ...

2017-06-15

A technique for measuring interdiffusion in multilayer materials during rapid heating using X-ray reflectivity is described. In this technique the sample is bent to achieve a range of incident angles simultaneously, and the scattered intensity is recorded on a fast high-dynamic-range mixed-mode pixel array detector. Heating of the multilayer is achieved by electrical resistive heating of the silicon substrate, monitored by an infrared pyrometer. As an example, reflectivity data from Al/Ni heated at rates up to 200 K s -1 are presented. At short times the interdiffusion coefficient can be determined from the rate of decay of the reflectivity peaks,more » and it is shown that the activation energy for interdiffusion is consistent with a grain boundary diffusion mechanism. At longer times the simple analysis no longer applies because the evolution of the reflectivity pattern is complicated by other processes, such as nucleation and growth of intermetallic phases.« less

Simulation of interdiffusion and voids growth based on cellular automata

NASA Astrophysics Data System (ADS)

Zhang, Fan; Zhang, Boyan; Zhang, Nan; Du, Haishun; Zhang, Xinhong

2017-02-01

In the interdiffusion of two solid-state materials, if the diffusion coefficients of the two materials are not the same, the interface of the two materials will shift to the material with the lower diffusion coefficient. This effect is known as the Kirkendall effect. The Kirkendall effect leads to Kirkendall porosity. The pores act as sinks for vacancies and become voids. In this paper, the movement of the Kirkendall plane at interdiffusion is simulated based on cellular automata. The number of vacancies, the critical radius of voids nucleation and the nucleation rate are analysed. The vacancies diffusion, vacancies aggregation and voids growth are also simulated based on cellular automata.

Characterization of Iridium Coated Rhenium Used in High-Temperature, Radiation-Cooled Rocket Thrusters

NASA Technical Reports Server (NTRS)

Stulen, R. H.; Boehme, D. R.; Clift, W. M.; McCarty, K. F.

1990-01-01

Materials used for radiation-cooled rocket thrusters must be capable of surviving under extreme conditions of high-temperatures and oxidizing environments. While combustion efficiency is optimized at high temperatures, many refractory metals are unsuitable for thruster applications due to rapid material loss from the formation of volatile oxides. This process occurs during thruster operation by reaction of the combustion products with the material surface. Aerojet Technical Systems has developed a thruster cone chamber constructed of Re coated with Ir on the inside surface where exposure to the rocket exhaust occurs. Re maintains its structural integrity at high temperature and the Ir coating is applied as an oxidation barrier. Ir also forms volatile oxide species (IrO2 and IrO3) but at a considerably slower rate than Re. In order to understand the performance limits of Ir-coated Re thrusters, we are investigating the interdiffusion and oxidation kinetics of Ir/Re. The formation of iridium and rhenium oxides has been monitored in situ by Raman spectroscopy during high temperature exposure to oxygen. For pure Ir, the growth of oxide films as thin as approximately 200 A could be easily detected and the formation of IrO2 was observed at temperatures as low as 600 C. Ir/Re diffusion test specimens were prepared by magnetron sputtering of Ir on Re substrates. Concentration profiles were determined by sputter Auger depth profiles of the heat treated specimens. Significant interdiffusion was observed at temperatures as low as 1000 C. Measurements of the activation energy suggest that below 1350 C, the dominant diffusion path is along defects, most likely grain boundaries, rather than bulk diffusion through the grains. The phases that form during interdiffusion have been examined by x ray diffraction. Analysis of heated test specimens indicates that the Ir-Re reaction produces a solid solution phase of Ir dissolved in the HCP structure of Re.

Diffusion and phase transformation behavior in poly-synthetically-twinned (PST) titanium-aluminum/titanium diffusion couple

NASA Astrophysics Data System (ADS)

Pan, Ling

Motivated by the great potential applications of gamma titanium aluminide based alloys and the important effect of diffusion on the properties of gamma-TiAl/alpha2-Ti3Al two-phase lamellar structure, we conduct this thesis research to explore the microstructural evolution and interdiffusion behavior, and their correlations in multi-phase solid state diffusion couples made up of pure titanium and polysynthetically-twinned (PST) Ti-49.3 at.% Al "single" crystal, in the temperature range of 973--1173 K. The diffusion couples are prepared by high vacuum hot-pressing, with the diffusion direction parallel to the lamellar planes. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) are employed to observe the microstructure at various interfaces/interphases. A reaction zone (RZ) of polycrystalline alpha 2-Ti3Al phase forms along the PST Ti-Al/Ti bonding interface having a wavy interface with the PST crystal and exhibits deeper penetration in alpha2 lamellae, consisting of many fine alpha2 and secondary gamma laths, than in primary gamma lamellae. Direct measurement of the RZ thickness on SEM back-scattered electron images reveals a parabolic growth of the RZ, indicating a macroscopically diffusion-controlled growth. Concentration profiles from Ti, through the RZ, into the alpha2 lamellae of the PST crystal are measured by quantitative energy-dispersive x-ray spectroscopy (EDS) in a scanning transmission electron microscope (STEM). A plateau of composition adjacent to the RZ/(mixed alpha2 lath in PST) interface forms in the deeply penetrated RZ grains, implying a diffusion barrier crossing the interface and some extent of interface control in the RZ grain growth. The interdiffusion coefficient is evaluated both independent of composition and as a function of composition. No significant concentration dependence of the interdiffusion coefficients is observed using Boltzmann-Matano analysis. The temperature dependence of the interdiffusion coefficients obeys the Arrhenius relationship with a pre-exponential factor of D 0 = (7.56 +/- 7.14) x 10-5 m2/s and an activation enthalpy of Q = 255.6+8.9-8.3 kJ/mol = (2.65 +/- 0.09) eV/atom. The initial nucleation stage of the RZ grains plays an important role in the later microstructural evolution as does the local mass balance. The interfacial energy and the strain energy in the deeply penetrated RZ grains are possible reasons for the plateau.

Simulation of thermally induced processes of diffusion and phase formation in layered binary metallic systems

NASA Astrophysics Data System (ADS)

Rusakov, V. S.; Sukhorukov, I. A.; Zhankadamova, A. M.; Kadyrzhanov, K. K.

2010-05-01

Results of the simulation of thermally induced processes of diffusion and phase formation in model and experimentally investigated layered binary metallic systems are presented. The physical model is based on the Darken phenomenological theory and on the mechanism of interdiffusion of components along the continuous diffusion channels of phases in the two-phase regions of the system. The simulation of processes in the model systems showed that the thermally stabilized concentration profiles in two-layer binary metallic systems are virtually independent of the partial diffusion coefficients; for the systems with the average concentration of components that is the same over the sample depth, the time of the thermal stabilization of the structural and phase state inhomogeneous over the depth grows according to a power law with increasing thickness of the system in such a manner that the thicknesses of the surface layers grow, while the thickness of the intermediate layer approaches a constant value. The results of the simulation of the processes of diffusion and phase formation in experimentally investigated layered binary systems Fe-Ti and Cu-Be upon sequential isothermal and isochronous annealings agree well with the experimental data.

Na/K-interdiffusion in alkali feldspar: new data on diffusion anisotropy and composition dependence

NASA Astrophysics Data System (ADS)

Schaeffer, Anne-Kathrin; Petrishcheva, Elena; Habler, Gerlinde; Abart, Rainer; Rhede, Dieter

2013-04-01

Exchange experiments between gem-quality alkali feldspar with an initial XOr of 0.85 or 0.72 and Na/K-salt melts have been conducted at temperatures between 800° and 1000° C. The crystals were prepared as crystallographically oriented plates, the polished surfaces corresponding to the (010) or (001) plane of the feldspar. The composition of the melts was varied systematically to induce a controlled shift of the feldspar towards more Na-rich or K-rich compositions (XOr 0.5 to 1). A molar excess of cations by a factor of 40 in the melt ensured constant concentration boundary conditions for cation exchange. Different geometries of diffusion profiles can be observed depending on the direction of the composition shift. For a shift towards more K-rich compositions the diffusion profile exhibits two plateaus corresponding to an exchanged rim in equilibrium with the melt and a completely unexchanged core, respectively. Between these plateaus an exchange front develops with an inflection point that progresses into the crystal with t1-2. The width of this diffusion front varies greatly with the extent of chemical shift and crystallographic direction. The narrowest profiles are always found in the direction normal to (010), i.e. b, marking the slowest direction of interdiffusion. A shift towards more Na-rich composition leads to the development of a crack system due to the composition strain associated with the substitution of the larger K+ion with the smaller Na+ion. The exchange front developing in this case lacks the inflection point observed for shifts towards more K-rich compositions. The observed geometry of the diffusion fronts can be explained by a composition dependence of the interdiffusion coefficient. We used the Boltzmann transformation to calculate the interdiffusion coefficient in dependence of composition from our data in a range between XOr 0.5 and 1 for profiles normal to both (010) and (001) and for different temperatures. As indicated by the different widths of the front a marked anisotropy in interdiffusion is apparent; it is about 10 times faster perpendicular to (001) than normal to (010). This is in good accordance with results of earlier studies. However, the composition dependence deviates from what is expected from theoretical calculations using the Manning relation for interdiffusion. For profiles normal to (001) the interdiffusion coefficient is nearly constant at 0.3 x 10-15m2s-1over the composition range XOr 0.50 to 0.95 and then rises steeply to values of 2.5 x 10-15m2s-1. Normal to (010) the interdiffusion coefficient is nearly constant at 0.03 x 10-15m2s-1over the composition range XOr 0.50 to 0.97 before, too, rising steeply at higher XOr. Interdiffusion coefficients calculated by Christoffersen et al. (1983) for this composition range also showed this rise but much less localized and steep. The activation energy also shows an anisotropy and slight composition dependence. Normal to (001) it is about 340 kJ/mole while it is 250 kJ/mole normal to (010). In the range between XOr0.94 to 1 it shows a slight rise by about 20 kJ/mole for both directions. ___ References Christoffersen et al. (1983): Interdiffusion of K and Na in alkali feldspar: diffusion couple experiments, -American Mineralogist, Vol. 68, pp. 1126-1133

Reactive Brazing of Carbon-Carbon Composites to Titanium

NASA Technical Reports Server (NTRS)

Shpargel, Tarah; Singh, M.; Morscher, Gregory; Asthana, Rajiv

2004-01-01

The Ti-metal/C-C composite joints were formed by reactive brazing with three commercial brazes, namely, Cu-ABA, TiCuNi, and TiCuSil. The joint microstructures were examined using optical microscopy, and scanning electron microscopy (SEM) coupled with energy dispersive spectrometry (EDS). The results of the microstructure analysis indicate solute redistribution across the joint and possible metallurgical bond formation via interdiffusion, which led to good wetting and spreading.

Active Metal Brazing of Carbon-Carbon Composites to Titanium

NASA Technical Reports Server (NTRS)

Singh, M.; Shpargel, T. P.; Morscher, G.; Asthana, R.

2004-01-01

The Ti-metal/C-C composite joints were formed by reactive brazing with three commercial brazes, namely, Cu-ABA, TiCuNi, and TiCuSil. The joint microstructures were examined using optical microscopy, and scanning electron microscopy (SEM) coupled with energy dispersive spectrometry (EDS). The results of the microstructure analysis indicate solute redistribution across the joint which led to good wetting, spreading, and metallurgical bond formation via interdiffusion.

The Influence of the Coating Deposition Process on the Interdiffusion Behavior Between Nickel-Based Superalloys and MCrAlY Bond Coats

NASA Astrophysics Data System (ADS)

Elsaß, M.; Frommherz, M.; Oechsner, M.

2018-02-01

In this work, interdiffusion between two nickel-based superalloys and two MCrAlY bond coats is investigated. The MCrAlY bond coats were applied using two different spraying processes, high velocity oxygen fuel spraying (HVOF) and low-pressure plasma spraying. Of primary interest is the evolution of Kirkendall porosity, which can form at the interface between substrate and bond coat and depends largely on the chemical compositions of the coating and substrate. Experimental evidence further suggested that the formation of Kirkendall porosity depends on the coating deposition process. Formation of porosity at the interface causes a degradation of the bonding strength between substrate and coating. After coating deposition, the samples were annealed at 1050 °C for up to 2000 h. Microstructural and compositional analyses were performed to determine and evaluate the Kirkendall porosity. The results reveal a strong influence of both the coating deposition process and the chemical compositions. The amount of Kirkendall porosity formed, as well as the location of appearance, is largely influenced by the coating deposition process. In general, samples with bond coats applied by means of HVOF show accelerated element diffusion. It is hypothesized that recrystallization of the substrate material is a main root cause for these observations.

Coupled CaAl-NaSi diffusion in plagioclase feldspar: Experiments and applications to cooling rate speedometry

NASA Astrophysics Data System (ADS)

Grove, Timothy L.; Baker, Michael B.; Kinzler, Rosamond J.

1984-10-01

The rate of CaAl-NaSi interdiffusion in plagioclase feldspar was determined under 1 atm anhydrous conditions over the temperature range 1400° to 1000°C in calcic plagioclase (An 80-81) by homogenizing coherent exsolution lamellae. The dependence of the average interdiffusion coefficient on temperature is given by the expression: D˜ = 10.99 ( cm 2/sec) exp (-123.4( kcal/mol)/RT), (T in °K). This value is for diffusion perpendicular to the (03 1¯) interface of the lamellae. CaAl-NaSi interdiffusion is 4 to 5 orders of magnitude slower than oxygen diffusion in the temperature range 1400° to 1200°C and possibly 10 orders of magnitude slower at subsolidus temperatures. The large differences in diffusion rates explain the apparent contradiction posed by the plagioclases of large layered intrusions ( e.g., the Skaergaard), which retain delicate Ca, Na compositional zoning profiles on the micron scale, but have undergone complete oxygen isotopic exchange with heated meteoric groundwater from the surrounding wall rocks. CaAl-NaSi diffusion is slow, the closure temperature is high (within the solidus-liquidus interval), and Ca-Na zoning is preserved. Oxygen diffusion is faster, the closure temperature is lower (350°-400°C) and the feldspars exchange oxygen with the low-temperature hydrothermal fluids. The complex micron-scale oscillatory zones in plagioclase can also be used as cooling rate speedometers for volcanic and plutonic plagioclase. Cooling histories typical of large mafic intrusions ( e.g. the Stillwater) are slow, begin at high initial temperatures (1200°C) and result in homogenization of oscillatory zones on the scale of 10 microns. The oscillatory zones found in the plagioclase of granodioritic plutons are preserved because cooling is initiated at a lower temperature (1000°C) limiting diffusion to submicron length scales despite the slow cooling rate of the intrusion.

Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

DOE PAGES

Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; ...

2015-02-05

The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition of SiNx

NASA Astrophysics Data System (ADS)

Tang, Hengjing; Wu, Xiaoli; Xu, Qinfei; Liu, Hongyang; Zhang, Kefeng; Wang, Yang; He, Xiangrong; Li, Xue; Gong, Hai Mei

2008-03-01

The fabrication of Au/SiNx/InP metal-insulator-semiconductor (MIS) diodes has been achieved by depositing a layer of SiNx on the (NH4)2Sx-treated n-InP. The SiNx layer was deposited at 200 °C using plasma-enhanced chemical vapor deposition (PECVD). The effect of passivation on the InP surface before and after annealing was evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements, and Auger electron spectroscopy (AES) analysis was used to investigate the depth profiles of several atoms. The results indicate that the SiNx passivation layer exhibits good insulative characteristics. The annealing process causes distinct inter-diffusion in the SiNx/InP interface and contributes to the decrease of the fixed charge density and minimum interface state density, which are 1.96 × 1012 cm-2 and 7.41 × 1011 cm-2 eV-1, respectively. A 256 × 1 InP/InGaAs/InP heterojunction photodiode, fabricated with sulfidation and SiNx passivation layer, has good response uniformity.

Microstructure and mechanical behavior of Zr substrates coated with FeCrAl and Mo by cold-spraying

NASA Astrophysics Data System (ADS)

Park, Dong Jun; Kim, Hyun Gil; Jung, Yang Il; Park, Jung Hwan; Yang, Jae Ho; Koo, Yang Hyun

2018-06-01

FeCrAl and Mo layers were cold-sprayed onto a Zr surface, with the Mo layer introduced between the FeCrAl coating and the Zr matrix preventing high-temperature interdiffusion. Microstructural characterization of the first-deposited Mo layer and the Zr matrix immediately below the Mo/Zr interface was performed using transmission electron microscopy, and near-interface elemental distributions were obtained using energy-dispersive X-ray spectroscopy. The deformation of the coated Mo powder induced the formation of microbands and mechanically interlocked nanoscale structures. The mechanical behavior of Zr with a coating layer was compared with those characteristic of conventional Zr samples. The coated sample showed smaller strength reduction in the test conducted at elevated temperature. The hardness and fracture morphology of the Zr matrix near the interface region were investigated to determine the effect of impacting Mo particles on the matrix microstructure. The enhanced hardness and cleavage fracture morphology of the Zr matrix immediately below the Mo/Zr interface indicated the occurrence of localized deformation owing to Mo particle impact.

Mecanismes fondamentaux et dynamique d'interdiffusion dans les boites quantiques auto-assemblees InAs/InP

NASA Astrophysics Data System (ADS)

Dion, Carolyne

This thesis contributes both to the understanding of the fundamental mechanisms driving the intermixing process in the InAs/InP quantum dot (QD) system and to the development of effective intermixing techniques for the integration of these structures into the next generations of optoelectronic devices for optical telecommunications. More specifically, we study the interdiffusion occurring (i) during heterostructure growth and ( ii) under thermal annealing in structures subjected to grown-in defects (GID) introduced into epitaxial layer during growth at reduced temperatures, or damage created by low-energy phosphorus ion implantation (LEII). Interdiffusion is probed using photoluminescence (PL) spectroscopy in conjunction with calculations of optical transition energies obtained from a tight-binding model. These investigations are completed by structural analyses using transmission electron microscopy (TEM). The characterization of the self-assembled QDs produced from the heteroepitaxy of pure InAs on InP reveals that the structures are significantly interdiffused. All structures in a given sample have the same phosphorus concentration, with [P] varying from 6 to 10% depending on growth conditions. We suggest that such substantial P incorporation into InAs during heteroepitaxy results from the surface As/P exchange process as well as strain-driven alloying. We show that GID and LEII-mediated intermixing techniques are both promising for spatially selective band gap tuning of InAs/InP QDs, producing lower annealing temperature threshold for detectable PL modification and PL blueshifts up to ˜ 270 meV. Upon annealing, PL spectra from standard and GID samples exhibit progressive blueshifts without bandwidth broadening. In contrast, PL spectra from LEII samples show the rise of a high energy peak superimposed to the original spectrum, leading to an apparent overall blueshift with significant bandwidth broadening. On the other hand, as confirmed by TEM, the QD shape is found to convert from a truncated pyramid in the as-grown state into either a dome or double-convex lens in annealed GID and LEII samples, respectively. Based on the evolution of PL characteristics and QDs morphology, we demonstrate that thermally-induced intermixing and GID-enhanced intermixing are governed by the transport of group-V interstitials emanating from the InP epilayer, while LEII-enhanced intermixing is dominated by the motion of group-V vacancies released by the implantation damage. Finally, we determine the diffusion coefficients corresponding to these two atomistic diffusion mechanisms. Keywords: Semiconductors, InAs, InP, quantum dots, diffusion, intermixing, photoluminescence, transmission electron microscopy.

Characterization of TiN/B-C-N multilayers by transmission electron microscopy, ion beam backscattering, and low angle x-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kung, H.; Fayeulle, S.; Nastasi, M.

1997-10-01

The effects of Ar ion irradiation on the structure and stability of multilayered DC sputtered thin films of TiN/B-C-N have been studied. An increase of the bilayer repeat length to a maximum of 12.8% and departure of nitrogen from the film was observed indicating the interdiffusion between TiN and B-C-N layers. For the highest dose (5 {times} 10{sup 16} ions/cm{sup 2}) the multilayered structure partly disappears. The various mechanisms are discussed in terms of stress-driven diffusion and viscous flow of atoms.

TEM analysis of irradiation-induced interaction layers in coated UMo/X/Al trilayer systems (X= Ti, Nb, Zr, and Mo)

NASA Astrophysics Data System (ADS)

Chiang, H.-Y.; Wiss, T.; Park, S.-H.; Dieste-Blanco, O.; Petry, W.

2018-02-01

Uranium-molybdenum (UMo) alloy powder embedded in an Al matrix is considered as a promising candidate for fuel conversion of research reactors. A modified system with a diffusion barrier X as coating, UMo/X/Al trilayer (X = Ti, Zr, Nb, and Mo), has been investigated to suppress interdiffusion between UMo and the Al matrix. The trilayer systems were tested by swift heavy ion irradiation, the thereby created interaction zone has been analyzed by scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDX). Detailed structural characterization are presented and compared to earlier μ-XRD analysis.

A Study of Interdiffusion in the Fe-C/Ti System Under Equilibrium and Nonequilibrium Conditions

NASA Astrophysics Data System (ADS)

Prasanthi, T. N.; Sudha, C.; Saroja, S.

2017-04-01

In the present study, diffusion behavior under equilibrium and nonequilibrium conditions in a Fe-C/Ti system is studied in the temperature range of 773 K to 1073 K (500 °C to 800 °C). A defect-free weld joint between mild steel (MS) (Fe-0.14 pct C) and Ti Grade 2 obtained by friction welding is diffusion annealed for various durations to study the interdiffusion behavior under equilibrium conditions, while an explosive clad joint is used to study interdiffusion under nonequilibrium conditions. From the elemental concentration profiles obtained across the MS-Ti interface using electron-probe microanalysis and imaging of the interface, the formation of distinct diffusion zones as a function of temperature and time is established. Concentration and temperature dependence of the interdiffusion coefficients ( D( c)) and activation energies are determined. Under equilibrium conditions, the change in molar volume with concentration shows a close match with the ideal Vegard's law, whereas a negative deviation is observed for nonequilibrium conditions. This deviation can be attributed to the formation of secondary phases, which, in turn, alters the D( c) values of diffusing species. Calculations showed that the D 0 and activation energy for interdiffusion under equilibrium is on the order of 10-11 m2/s and 147 kJ/mol, whereas it is far lower in the nonequilibrium case (10-10 m2/s and 117 kJ/mol) in the compositional range of 40 to 50 wt pct Fe, which also manifests as accelerated growth kinetics of the different diffusion zones.

Effect of interdiffusion and external magnetic field on electronic states and light absorption in Gaussian-shaped double quantum ring

NASA Astrophysics Data System (ADS)

Aziz-Aghchegala, V. L.; Mughnetsyan, V. N.; Kirakosyan, A. A.

2018-02-01

The effect of interdiffusion and magnetic field on confined states of electron and heavy hole as well as on interband absorption spectrum in a Ga1-xAlxAs/GaAs Gaussian-shaped double quantum ring are investigated. It is shown that both interdiffusion and magnetic field lead to the change of the charge carriers' quantum states arrangement by their energies. The oscillating behavior of the electron ground state energy as a function of magnetic field induction gradually disappears with the increase of diffusion parameter due to the enhanced tunneling of electron to the central region of the ring. For the heavy hole the ground state energy oscillations are not observable in the region of the values of magnetic field induction B = 0 - 10 T . For considered transitions both the magnetic field and the interdiffusion lead to a blue-shift of the absorption spectrum and to decreasing of the absorption intensity. The obtained results indicate on the opportunity of purposeful manipulation of energy states and absorption spectrum of a Gaussian-shaped double quantum ring by means of the post growth annealing and the external magnetic field.

Microstructure studies of interdiffusion behavior of U 3Si 2/Zircaloy-4 at 800 and 1000 °C

DOE PAGES

He, Lingfeng; Harp, Jason M.; Hoggan, Rita E.; ...

2017-01-22

Fuel swelling during normal reactor operations could lead to unfavorable chemical interactions when in contact with its cladding. As new fuel types are developed, it is crucial to understand the interaction behavior between fuel and its cladding. Diffusion experiments between U 3Si 2 and Zricaloy-4 (Zry-4) were conducted at 800 and 1000°C up to 100 hours. The microstructure of pristine U 3Si 2 and U 3Si 2/Zry-4 interdiffusion products were examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) equipped with an energy dispersive X-ray spectroscopy (EDS) system. The primary interdiffusion product observed at 800°C is ZrSi 2,more » with secondary phases of U-Zr in the Zry-4, and Fe-Cr-W-Zr-Si phases at Zry-4/ZrSi 2 interface and Fe-Cr-U-Si phases at ZrSi 2/U-Si interface. As a result, the primary interdiffusion products at 1000°C were Zr 2Si, U-Zr-Fe-Ni, U, U-Zr, and a low melting point phase U 6Fe.« less

Does endodontic post space irrigation affect smear layer removal and bonding effectiveness?

PubMed

Gu, Xin-Hua; Mao, Cai-Yun; Liang, Cong; Wang, Hui-Ming; Kern, Matthias

2009-10-01

The effect of different post space irrigants on smear layer removal and dentin bond strength was evaluated. Sixty-six extracted sound maxillary central incisors were endodontically treated. After post space preparation, the teeth were assigned to three groups of 22 teeth each. The teeth of these three groups were irrigated for 1 min with 17% ethylenediaminetetracetic acid (EDTA) (group 1), 5.25% sodium hypochlorite (NaOCl) (group 2), or 0.9% sodium chloride (NaCl) (group 3). In each group, eight specimens were split longitudinally for smear layer evaluation, and the other fourteen specimens were filled with a self-etching adhesive system (Panavia F). Four of 14 specimens of each group were prepared for evaluation of the resin-dentin interdiffusion zone (RDIZ) and resin tags, and the other 10 specimens were serially sectioned for push-out test analysis. Smear layer removal and bond strength were affected by different post space irrigants. EDTA removed the smear layer extremely effectively and, as a result, improved the bond strength at each region (apical, middle, and coronal) of the roots. Resin tag formation and the RDIZ were also affected by different irrigants and in accordance with bond strength. Therefore, removal of the smear layer use a self-etching luting system plays an important role in bonding effectiveness.

Atomic layer deposition and post-growth thermal annealing of ultrathin MoO3 layers on silicon substrates: Formation of surface nanostructures

NASA Astrophysics Data System (ADS)

Liu, Hongfei; Yang, Ren Bin; Yang, Weifeng; Jin, Yunjiang; Lee, Coryl J. J.

2018-05-01

Ultrathin MoO3 layers have been grown on Si substrates at 120 °C by atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo(CO)6] and ozone (O3) as the Mo- and O-source precursors, respectively. The ultrathin films were further annealed in air at Tann = 550-750 °C for 15 min. Scanning-electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy have been employed to evaluate the morphological and elemental properties as well as their evolutions upon annealing of the thin films. They revealed an interfacial SiOx layer in between the MoO3 layer and the Si substrate; this SiOx layer converted into SiO2 during the annealing; and the equivalent thickness of the MoO3 (SiO2) layer decreased (increased) with the increase in Tann. Particles with diameters smaller than 50 nm emerged at Tann = 550 °C and their sizes (density) were reduced (increased) by increasing Tann to 650 °C. A further increase of Tann to 750 °C resulted in telephone-cord-like MoO3 structures, initiated from isolated particles on the surface. These observations have been discussed and interpreted based on temperature-dependent atomic interdiffusions, surface evaporations, and/or melting of MoO3, which shed new light on ALD MoO3 towards its electronic applications.

Interconnect mechanisms in microelectronic packaging

NASA Astrophysics Data System (ADS)

Roma, Maria Penafrancia C.

Global economic, environmental and market developments caused major impact in the microelectronics industry. Astronomical rise of gold metal prices over the last decade shifted the use of copper and silver alloys as bonding wires. Environmental legislation on the restriction of the use of Pb launched worldwide search for lead-free solders and platings. Finally, electrical and digital uses demanded smaller, faster and cheaper devices. Ultra-fine pitch bonding, decreasing bond wire sizes and hard to bond substrates have put the once-robust stitch bond in the center of reliability issues due to stitch bond lift or open wires .Unlike the ball bond, stitch bonding does not lead to intermetallic compound formation but adhesion is dependent on mechanical deformation, interdiffusion, solid solution formation, void formation and mechanical interlocking depending on the wire material, bond configuration, substrate type , thickness and surface condition. Using Au standoff stitch bonds on NiPdAu plated substrates eliminated stitch bond lift even when the Au and Pd layers are reduced. Using the Matano-Boltzmann analysis on a STEM (Scanning Transmission Analysis) concentration profile the interdiffusion coefficient is measured to be 10-16 cm 2/s. Wire pull strength data showed that the wire pull strength is 0.062N and increases upon stress testing. Meanwhile, coating the Cu wire with Pd, not only increases oxidation resistance but also improved adhesion due to the formation of a unique interfacial adhesion layers. Adhesion strength as measured by pull showed the Cu wire bonded to Ag plated Cu substrate (0.132N) to be stronger than the Au wire bonded on the same substrate (0.124N). Ag stitch bonded to Au is predicted to be strong but surface modification made the adhesion stronger. However, on the Ag ball bonded to Al showed multiple IMC formation with unique morphology exposed by ion milling and backscattered scanning electron microscopy. Adding alloying elements in the Ag wire alloy showed differences in adhesion strength and IMC formation. Bond strength by wire pull testing showed the 95Ag alloy with higher values while shear bond testing showed the 88Ag higher bond strength. Use of Cu pillars in flip chips and eutectic bonding in wafer level chip scale packages are direct consequences of diminishing interconnect dimension as a result of the drive for miniaturization. The combination of Cu-Sn interdiffusion, Kirkendall mechanism and heterogeneous vacancy precipitation are the main causes of IMC and void formation in Cu pillar - Sn solder - Cu lead frame sandwich structure. However, adding a Ni barrier agent showed less porous IMC layer as well as void formation as a result of the modified Cu and Sn movement well as the void formation. Direct die to die bonding using Al-Ge eutectic bonds is necessary when 3D integration is needed to reduce the footprint of a package. Hermeticity and adhesion strength are a function of the Al/Ge thickness ratio, bonding pressure, temperature and time. Scanning Electron Microscope (SEM) and Focused Ion Beam (FIB) allowed imaging of interfacial microstructures, porosity, grain morphology while Scanning Transmission Electron microscope (STEM) provided diffusion profile and confirmed interdiffusion. Ion polishing technique provided information on porosity and when imaged using backscattered mode, grain structure confirmed mechanical deformation of the bonds. Measurements of the interfacial bond strength are made by wire pull tests and ball shear tests based on existing industry standard tests. However, for the Al-Ge eutectic bonds, no standard strength is available so a test is developed using the stud pull test method using the Dage 4000 Plus to yield consistent results. Adhesion strengths of 30-40 MPa are found for eutectic bonded packages however, as low as 20MPa was measured in low temperature bonded areas.

High surface stability of magnetite on bi-layer Fe3O4/Fe/MgO(0 0 1) films under 1 MeV Kr+ ion irradiation

NASA Astrophysics Data System (ADS)

Kim-Ngan, N.-T. H.; Krupska, M.; Balogh, A. G.; Malinsky, P.; Mackova, A.

2017-12-01

We investigate the stability of the bi-layer Fe3O4/Fe(0 0 1) films grown epitaxially on MgO(0 0 1) substrates with the layer thickness in the range of 25-100 nm upon 1 MeV Kr+ ion irradiation. The layer structure and layer composition of the films before and after ion irradiation were studied by XRR, RBS and RBS-C techniques. The interdiffusion and intermixing was analyzed. No visible change in the RBS spectra was observed upon irradiation with ion fluence below 1015 Kr cm-2. The bi-layer structure and the stoichiometric Fe3O4 layer on the surface were well preserved after Kr+ ion irradiation at low damage levels, although the strong intermixing implied a large interfacial (Fe x O y ) and (Fe, Mg)O y layer respective at Fe3O4-Fe and Fe-MgO interface. The high ion fluence of 3.8  ×  1016 Kr cm-2 has induced a complete oxidization of the buffer Fe layer. Under such Kr fluence, the stoichiometry of the Fe3O4 surface layer was still preserved indicating its high stability. The entire film contains Fe x O y -type composition at ion fluence large than 5.0  ×  1016 Kr cm-2.

In-depth evolution of chemical states and sub-10-nm-resolution crystal orientation mapping of nanograins in Ti(5 nm)/Au(20 nm)/Cr(3 nm) tri-layer thin films

NASA Astrophysics Data System (ADS)

Zhu, Xiaoli; Todeschini, Matteo; Bastos da Silva Fanta, Alice; Liu, Lintao; Jensen, Flemming; Hübner, Jörg; Jansen, Henri; Han, Anpan; Shi, Peixiong; Ming, Anjie; Xie, Changqing

2018-09-01

The applications of Au thin films and their adhesion layers often suffer from a lack of sufficient information about the chemical states of adhesion layers and about the high-lateral-resolution crystallographic morphology of Au nanograins. Here, we demonstrate the in-depth evolution of the chemical states of adhesive layers at the interfaces and the crystal orientation mapping of gold nanograins with a lateral resolution of less than 10 nm in a Ti/Au/Cr tri-layer thin film system. Using transmission electron microscopy, the variation in the interdiffusion at Cr/Au and Ti/Au interfaces was confirmed. From X-ray photoelectron spectroscopy (XPS) depth profiling, the chemical states of Cr, Au and Ti were characterized layer by layer, suggesting the insufficient oxidation of the adhesive layers. At the interfaces the Au 4f peaks shift to higher binding energies and this behavior can be described by a proposed model based on electron reorganization and substrate-induced final-state neutralization in small Au clusters supported by the partially oxidized Ti layer. Utilizing transmission Kikuchi diffraction (TKD) in a scanning electron microscope, the crystal orientation of Au nanograins between two adhesion layers was non-destructively characterized with sub-10 nm spatial resolution. The results provide nanoscale insights into the Ti/Au/Cr thin film system and contribute to our understanding of its behavior in nano-optic and nano-electronic devices.

Interdiffusion and reaction between U and Zr

NASA Astrophysics Data System (ADS)

Park, Y.; Newell, R.; Mehta, A.; Keiser, D. D.; Sohn, Y. H.

2018-04-01

The microstructural development and diffusion kinetics were examined for the binary U vs. Zr system using solid-to-solid diffusion couples, U vs. Zr, annealed at 580 °C for 960 h, 650 °C for 480 h, 680 °C for 240 h, and 710 °C for 96 h. Scanning and transmission electron microscopies with X-ray energy dispersive spectroscopy were employed for detailed microstructural and compositional analyses. Interdiffusion and reaction in U vs. Zr diffusion couples primarily produced: δ-UZr2 solid solution (hP3) and α‧-U at 580 °C; and (γU,βZr) solid solution (cI2) and α‧-U at 650°, 680° and 710 °C. The α‧-phase was confirmed as a reduced variant of the α-U orthorhombic structure with lattice parameters, a × b × c = 2.65 × 5.40 × 4.75 (Å) with a negligible solubility for Zr at room temperature. Concentration profiles were examined to determine interdiffusion coefficients, integrated interdiffusion coefficients, and intrinsic diffusion coefficients using Boltzmann-Matano, Wagner, and Heumann analyses, respectively. Composition-dependence of interdiffusion coefficients were documented for α-U, δ-UZr2 (at 580 °C) and (γU,βZr) solid solution (at 650°, 680° and 710 °C). U was determined to intrinsically diffuse faster than Zr, approximately by an order of magnitude, in the δ-UZr2 at 580 °C, and (γU,βZr) phases at 650°, 680° and 710 °C. Based on Darken's approach, thermodynamic data available in literature were coupled to estimate the tracer diffusion coefficients and atomic mobilities of U and Zr.

Double-shelled silicon anode nanocomposite materials: A facile approach for stabilizing electrochemical performance via interface construction

NASA Astrophysics Data System (ADS)

Du, Lulu; Wen, Zhongsheng; Wang, Guanqin; Yang, Yan-E.

2018-04-01

The rapid capacity fading induced by volumetric changes is the main issue that hinders the widespread application of silicon anode materials. Thus, double-shelled silicon composite materials where lithium silicate was located between an Nb2O5 coating layer and a silicon active core were configured to overcome the chemical compatibility issues related to silicon and oxides. The proposed composites were prepared via a facile co-precipitation method combined with calcination. Transmission electron microscopy and X-ray photoelectron spectroscopy analysis demonstrated that a transition layer of lithium silicate was constructed successfully, which effectively hindered the thermal inter-diffusion between the silicon and oxide coating layers during heat treatment. The electrochemical performance of the double-shelled silicon composites was enhanced dramatically with a retained specific capacity of 1030 mAh g-1 after 200 cycles at a current density of 200 mA g-1 compared with 598 mAh g-1 for a core-shell Si@Nb2O5 composite that lacked the interface. The lithium silicate transition layer was shown to play an important role in maintaining the high electrochemical stability.

Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

NASA Astrophysics Data System (ADS)

Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

2009-05-01

Highly c-axis oriented LiNbO3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO3 films under the optimized deposition condition. An extra peak at 905 cm-1 was observed in the Raman spectra of LiNbO3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO3 film and the Al : ZnO layer.

Analysis of buried interfaces in multilayer mirrors using grazing incidence extreme ultraviolet reflectometry near resonance edges.

PubMed

Sertsu, M G; Nardello, M; Giglia, A; Corso, A J; Maurizio, C; Juschkin, L; Nicolosi, P

2015-12-10

Accurate measurements of optical properties of multilayer (ML) mirrors and chemical compositions of interdiffusion layers are particularly challenging to date. In this work, an innovative and nondestructive experimental characterization method for multilayers is discussed. The method is based on extreme ultraviolet (EUV) reflectivity measurements performed on a wide grazing incidence angular range at an energy near the absorption resonance edge of low-Z elements in the ML components. This experimental method combined with the underlying physical phenomenon of abrupt changes of optical constants near EUV resonance edges enables us to characterize optical and structural properties of multilayers with high sensitivity. A major advantage of the method is to perform detailed quantitative analysis of buried interfaces of multilayer structures in a nondestructive and nonimaging setup. Coatings of Si/Mo multilayers on a Si substrate with period d=16.4  nm, number of bilayers N=25, and different capping structures are investigated. Stoichiometric compositions of Si-on-Mo and Mo-on-Si interface diffusion layers are derived. Effects of surface oxidation reactions and carbon contaminations on the optical constants of capping layers and the impact of neighboring atoms' interactions on optical responses of Si and Mo layers are discussed.

Modelling Polymer Deformation and Welding Behaviour during 3D Printing

NASA Astrophysics Data System (ADS)

McIlroy, Claire; Olmsted, Peter

2016-11-01

3D printing has the potential to transform manufacturing processes, yet improving the strength of printed parts, to equal that of traditionally-manufactured parts, remains an underlying issue. The most common method, fused deposition modelling, involves melting a thermoplastic, followed by layer-by-layer extrusion of the material to fabricate a three-dimensional object. The key to the ensuring strength at the weld between these layers is successful inter-diffusion. However, as the printed layer cools towards the glass transition temperature, the time available for diffusion is limited. In addition, the extrusion process significantly deforms the polymer micro-structure prior to welding and consequently affects how the polymers "re-entangle" across the weld. We have developed a simple model of the non-isothermal printing process to explore the effects that typical printing conditions and amorphous polymer rheology have on the ultimate weld structure. In particular, we incorporate both the stretch and orientation of the polymer using the Rolie-Poly constitutive equation to examine how the melt flows through the nozzle and is deposited onto the build plate. We then address how this deformation relaxes and contributes to the thickness and structure of the weld. National Institute for Standards and Technology (NIST) and Georgetown University.

Modelling Polymer Deformation during 3D Printing

NASA Astrophysics Data System (ADS)

McIlroy, Claire; Olmsted, Peter

Three-dimensional printing has the potential to transform manufacturing processes, yet improving the strength of printed parts, to equal that of traditionally-manufactured parts, remains an underlying issue. The fused deposition modelling technique involves melting a thermoplastic, followed by layer-by-layer extrusion to fabricate an object. The key to ensuring strength at the weld between layers is successful inter-diffusion. However, prior to welding, both the extrusion process and the cooling temperature profile can significantly deform the polymer micro-structure and, consequently, how well the polymers are able to ``re-entangle'' across the weld. In particular, polymer alignment in the flow can cause de-bonding of the layers and create defects. We have developed a simple model of the non-isothermal extrusion process to explore the effects that typical printing conditions and material rheology have on the conformation of a polymer melt. In particular, we incorporate both stretch and orientation using the Rolie-Poly constitutive equation to examine the melt structure as it flows through the nozzle, the subsequent alignment with the build plate and the resulting deformation due to the fixed nozzle height, which is typically less than the nozzle radius.

Interdiffusion in a ? superlattice: an exploratory nuclear magnetic resonance study

NASA Astrophysics Data System (ADS)

Li, Y.; Ross, J. W.; McCausland, M. A. H.; Bunbury, D. St. P.; Ward, R. C. C.; Wells, M. R.

1997-07-01

We have carried out an exploratory NMR study of interdiffusion at interfaces between epitaxially grown laminae of rare-earth metals. The system investigated was a terbium - yttrium superlattice grown by molecular-beam epitaxy at 0953-8984/9/29/015/img10. The NMR spectrum of 0953-8984/9/29/015/img11 shows satellites associated with Tb ions with different numbers of Y neighbours and therefore provides information about the yttrium concentration profile resulting from interdiffusion. Our data are interpreted in terms of a model based on thermally activated diffusion and which allows for the progressive decrease in 0953-8984/9/29/015/img12, the RMS diffusion length, from the lowest to the highest interface. The diffusion coefficient, provisionally assumed to be independent of composition, is found to be 0953-8984/9/29/015/img13 at the growth temperature.

The Fe2(+)-Mg interdiffusion in orthopyroxene: Constraints from cation ordering and structural data and implications for cooling rates of meteorites

NASA Technical Reports Server (NTRS)

Ganguly, J.; Tazzoli, V.

1993-01-01

Orthopyroxene crystals in a number of meteorites exhibit compositional zoning of Fe and Mg, which provide important constraint on their cooling rates. However, attempts to model cooling rate of these crystals from Fe-Mg zoning profiles suffer from the lack of any measured or theoretically well constrained Fe-Mg interdiffusion data in OP(x) It has been assumed that Fe-Mg interdiffusion in OP(x) only slightly slower than that in olivine. The purpose of this paper is to (1) calculate the Fe-Mg fractionation, and (2) provide analytical formulation relating cooling rate to the length of the diffusion zone across the interface of the overgrowth of a mineral on itself with application to Mg diffusion profile across OP(x) growth on OP(x) in certain mesosiderites.

BAKABLE ULTRA-HIGH VACUUM VALVE

DOEpatents

Mark, J.T.; Gantz, I.H.

1962-07-10

S>This patent relates to a valve useful in applications involving successively closing and opening a communication between a chamber evacuated to an ultra-high vacuum condition of the order of 10/sup -10/ millimeters of mercury and another chamber or the ambient. The valve is capable of withstanding extended baking at 450 deg C and repeated opening and closing without repiacement of the valve seat (approximately 200 cycle limit). The seal is formed by mutual interdiffusion weld, coerced by a pneumatic actuator. (AEC)

Ultrafast time-resolved spectroscopy of lead halide perovskite films

NASA Astrophysics Data System (ADS)

Idowu, Mopelola A.; Yau, Sung H.; Varnavski, Oleg; Goodson, Theodore

2015-09-01

Recently, lead halide perovskites which are organic-inorganic hybrid structures, have been discovered to be highly efficient as light absorbers. Herein, we show the investigation of the excited state dynamics and emission properties of non-stoichiometric precursor formed lead halide perovskites grown by interdiffusion method using steady-state and time-resolved spectroscopic measurements. The influence of the different ratios of the non-stoichiometric precursor solution was examined. The observed photoluminescence properties were correlated with the femtosecond transient absorption measurements.

Measurements of Local Strain Variation in Si(1-x)Ge(x)/Si Heterostructures

NASA Technical Reports Server (NTRS)

Bell, L. D.; Kaiser, W. J.; Manion, S. J.; Milliken, S. J.; Pike, W. T.; Fathauer, R. W.

1995-01-01

The energy splitting of the conduction-band minimum of Si(1-x), Ge(x), due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si(1-x), Ge(x) structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si(1-x), Ge(x), however, heterogeneity in the strain of the Si(1-x), Ge(x) layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si(1-x)Ge(x) surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.

Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate

NASA Astrophysics Data System (ADS)

Hu, Bo; He, Wei; Ye, Jun; Tang, Jin; Syed Sheraz, Ahmad; Zhang, Xiang-Qun; Cheng, Zhao-Hua

2015-01-01

Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of CoSi2 buffer layers were grown on Si (001) substrates. In order to investigate morphology, structure, and magnetic properties of films, scanning tunneling microscope (STM), low energy electron diffraction (LEED), high resolution transmission electron microscopy (HRTEM), and surface magneto-optical Kerr effect (SMOKE) were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of CoSi2 buffer layers. Few CoSi2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic (001) films. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921801 and 2012CB933102), the National Natural Science Foundation of China (Grant Nos. 11374350, 11034004, 11274361, and 11274033), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131102130005).

Microstructural characterization of an irradiated RERTR-6 U-7Mo/AA4043 alloy dispersion fuel plate specimen blister-tested to a final temperature of 500°C

DOE PAGES

Keiser, Jr., Dennis D.; Jue, Jan -Fong; Gan, Jian; ...

2017-02-27

The Material Management and Minimization (M3) Reactor Conversion Program, in the past called the Reduced Enrichment for Research and Test Reactor (RERTR) Program, is developing low-enriched uranium (LEU) fuels for application in research reactors. U–Mo alloy dispersion fuel is one type being developed. Blister testing has been performed on different fuel plate samples to determine the margin to failure for fuel plates irradiated to different fission densities. Microstructural characterization was performed using scanning electron microscopy and transmission electron microscopy on a sample taken from a U-7Mo/AA4043 matrix dispersion fuel plate irradiated in the RERTR-6 experiment that was blister-tested up tomore » a final temperature of 500°C. The results indicated that two types of grain/cell boundaries were observed in the U- 7Mo fuel particles, one with a relatively low Mo content and fission gas bubbles and a second type enriched in Si, due to interdiffusion from the Si-containing matrix, with little evidence of fission gas bubbles. With respect to the behavior of the major fission gas Xe, a significant amount of the Xe was still observed within the U-7Mo fuel particle, along with microns into the AA4043 matrix. For the fuel/matrix interaction layers that form during fabrication and then grow during irradiation, they change from the as-irradiated amorphous structure to one that is crystalline after blister testing. In the AA4043 matrix, the original Si-rich precipitates, which are typically observed in as-irradiated U-Mo dispersion fuel, get consumed due to interdiffusion with the U-7Mo fuel particles during the blister test. Lastly, the fission gas bubbles that were originally around 2 nm in diameter and resided on a fission gas superlattice in the intragranular regions of as-irradiated U-7Mo fuel grew in size (up to ~20 nm diameter) during blister testing.« less

Microstructural characterization of an irradiated RERTR-6 U-7Mo/AA4043 alloy dispersion fuel plate specimen blister-tested to a final temperature of 500°C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Keiser, Jr., Dennis D.; Jue, Jan -Fong; Gan, Jian

The Material Management and Minimization (M3) Reactor Conversion Program, in the past called the Reduced Enrichment for Research and Test Reactor (RERTR) Program, is developing low-enriched uranium (LEU) fuels for application in research reactors. U–Mo alloy dispersion fuel is one type being developed. Blister testing has been performed on different fuel plate samples to determine the margin to failure for fuel plates irradiated to different fission densities. Microstructural characterization was performed using scanning electron microscopy and transmission electron microscopy on a sample taken from a U-7Mo/AA4043 matrix dispersion fuel plate irradiated in the RERTR-6 experiment that was blister-tested up tomore » a final temperature of 500°C. The results indicated that two types of grain/cell boundaries were observed in the U- 7Mo fuel particles, one with a relatively low Mo content and fission gas bubbles and a second type enriched in Si, due to interdiffusion from the Si-containing matrix, with little evidence of fission gas bubbles. With respect to the behavior of the major fission gas Xe, a significant amount of the Xe was still observed within the U-7Mo fuel particle, along with microns into the AA4043 matrix. For the fuel/matrix interaction layers that form during fabrication and then grow during irradiation, they change from the as-irradiated amorphous structure to one that is crystalline after blister testing. In the AA4043 matrix, the original Si-rich precipitates, which are typically observed in as-irradiated U-Mo dispersion fuel, get consumed due to interdiffusion with the U-7Mo fuel particles during the blister test. Lastly, the fission gas bubbles that were originally around 2 nm in diameter and resided on a fission gas superlattice in the intragranular regions of as-irradiated U-7Mo fuel grew in size (up to ~20 nm diameter) during blister testing.« less

Microstructural characterization of an irradiated RERTR-6 U-7Mo/AA4043 alloy dispersion fuel plate specimen blister-tested to a final temperature of 500 °C

NASA Astrophysics Data System (ADS)

Keiser, Dennis D.; Jue, Jan-Fong; Gan, Jian; Miller, Brandon D.; Robinson, Adam B.; Madden, James W.; Ross Finlay, M.; Moore, Glenn; Medvedev, Pavel; Meyer, Mitch

2017-05-01

The Material Management and Minimization (M3) Reactor Conversion Program, in the past called the Reduced Enrichment for Research and Test Reactor (RERTR) Program, is developing low-enriched uranium (LEU) fuels for application in research and test reactors. U-Mo alloy dispersion fuel is one type being developed. Blister testing has been performed on different fuel plate samples to determine the margin to failure for fuel plates irradiated to different fission densities. Microstructural characterization was performed using scanning electron microscopy and transmission electron microscopy on a sample taken from a U-7Mo/AA4043 matrix dispersion fuel plate irradiated in the RERTR-6 experiment that was blister-tested up to a final temperature of 500 °C. The results indicated that two types of grain/cell boundaries were observed in the U-7Mo fuel particles, one with a relatively low Mo content and fission gas bubbles and a second type enriched in Si, due to interdiffusion from the Si-containing matrix, with little evidence of fission gas bubbles. With respect to the behavior of the major fission gas Xe, a significant amount of the Xe was still observed within the U-7Mo fuel particle, along with microns into the AA4043 matrix. For the fuel/matrix interaction layers that form during fabrication and then grow during irradiation, they change from the as-irradiated amorphous structure to one that is crystalline after blister testing. In the AA4043 matrix, the original Si-rich precipitates, which are typically observed in as-irradiated U-Mo dispersion fuel, get consumed due to interdiffusion with the U-7Mo fuel particles during the blister test. Finally, the fission gas bubbles that were originally around 3 nm in diameter and resided on a fission gas superlattice (FGS) in the intragranular regions of as-irradiated U-7Mo fuel grew in size (up to ∼20 nm diameter) during blister testing and, in many areas, are no longer organized as a superlattice.

Study of molybdenum-aluminum interdiffusion kinetics and contact resistance for VLSI applications

NASA Astrophysics Data System (ADS)

Singh, R. N.; Brown, D. M.; Kim, M. J.; Smith, G. A.

1985-12-01

Interdiffusion barrier characteristics of molybdenum thin film with aluminum-1% Si is studied between 733 and 763 K via sheet and contact resistance measurements, Rutherford backscattering spectrometry, secondary ion mass spectrometry, and x-ray diffraction analysis. The results indicate that thermal annealing of Mo/Al-1% Si thin film couples leads to MoAl12 compound formation initially as a nonplanar front, but extensive annealing results in complete transformation of Al-1% Si to MoAl12 and a significant increase in contact resistance. The interdiffusion kinetics is diffusion controlled and shows parabolic time dependence, incubation periods, and extremely high activation energy value of 5.9 eV. The incubation periods and an high activation energy values are explained by the presence of silicon precipitates at the Mo/Al-1% Si interface. Implications of these observations to VLSI device characteristics are discussed and a safe time-temperature processing regime is proposed.

Interdiffusion behavior of tungsten or rhenium and group 5 and 6 elements and alloys of the periodic table. Part 2A: Appendices A-G

NASA Technical Reports Server (NTRS)

Arcella, F. G.

1974-01-01

Arc cast W, CVD, W, CVD Re, and powder metallurgy Re materials were hot isostatically pressure welded to ten different refractory metals and alloys and thermally aged at 10 to the minus 8th power torr at 1200 C, 1500 C, 1630 C, 1800 C, and 2000 C for 100 hours to 2000 hours. Electron beam microprobe analysis was used to characterize the interdiffusion zone width of each couple system as a function of age time and temperature. Each system was least squares fitted to the equation: In (delta X sq/t) = B/T + A, where delta X is net interdiffusion zone width, t is age time, and T is age temperature. Detailed descriptions of experimental and analytical procedures utilized in conducting the experimental program are provided. For Vol. 1, see N74-34046.

Tailoring characteristic thermal stability of Ni-Au binary nanocrystals via structure and composition engineering: theoretical insights into structural evolution and atomic inter-diffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Bangquan; Wang, Hailong; Xing, Guozhong

We report on the structural evolution and atomic inter-diffusion characteristics of the bimetallic Ni-Au nanocrystals (NCs) by molecular dynamics simulations studies. Our results reveal that the thermal stability dynamics of Ni-Au NCs strongly depends on the atomic configurations. By engineering the structural construction with Ni:Au = 1:1 atomic composition, compared with core-shell Au@Ni and alloy NCs, the melting point of core-shell Ni@Au NCs is significantly enhanced up to 1215 K. Unexpectedly, with atomic ratio of Au:Ni= 1:9, the melting process initiates from the atoms in the shell of Ni@Au and alloy NCs, while starts from the core of Au@Ni NCs.more » The corresponding features and evolution process of structural motifs, mixing and segregation are illustrated via a series of dynamic simulations videos. Moreover, our results revealed that the face centered cubic phase Au{sub 0.75}Ni{sub 0.25} favorably stabilizes in NCs form but does not exist in the bulk counterpart, which elucidates the anomalies of previously reported experimental results on such bimetallic NCs.« less

Impact of an AlAs window layer upon the optical properties of Al x Ga1-x As photodiodes

NASA Astrophysics Data System (ADS)

Kang, T.; Chen, X. J.; Johnson, E. B.; Christian, J. F.; Lee, K.; Hammig, M. D.

2016-05-01

Recently developed advanced scintillators, which have the ability to distinguish gamma-ray interaction events from those that accompany neutron impact, require improved quantum efficiency in the blue to near UV region of the spectrum. We utilize GaAs/Al0.8Ga0.2As photodiode elements as components in a wide band-gap solid-state photomultiplier as a lower-cost, lower logistical burden, and higher quantum efficiency replacement for the photomultiplier tube. An AlAs window layer is employed as a means to increase the diode’s optical performance. Relative to structures absent the window layer, simulations and measurements demonstrate that the AlAs layer produces a spatial coincidence between regions of large drift fields with regions of high photon absorption. In addition to the AlAs layer, secondary ion mass spectrometry measurements show that an unexpected high degree of inter-diffusion of GaAs and AlAs quenches the photon-detection efficiency, a decrease that can be avoided by its post-growth removal. With the AlAs layer, the peak external quantum efficiency of 49% is achieved at 450 nm with 10 V reverse bias, which does not fully deplete the device. Simulations show that full depletion can result in efficiencies exceeding 90%. In order to enhance the optical response, a simple anti-reflective coating layer is designed using the existing passivation layer components that successfully minimizes the reflection at the wavelength range of interest (300 nm-500 nm).

Interfacial layers evolution during annealing in Ti-Al multi-laminated composite processed using hot press and roll bonding

NASA Astrophysics Data System (ADS)

Assari, A. H.; Eghbali, B.

2016-09-01

Ti-Al multi-laminated composites have great potential in high strength and low weight structures. In the present study, tri-layer Ti-Al composite was synthesized by hot press bonding under 40 MPa at 570 °C for 1 h and subsequent hot roll bonding at about 450 °C. This process was conducted in two accumulative passes to 30% and to 67% thickness reduction in initial and final passes, respectively. Then, the final annealing treatments were done at 550, 600, 650, 700 and 750 °C for 2, 4 and 6 h. Investigations on microstructural evolution and thickening of interfacial layers were performed by scanning electron microscopes, energy dispersive spectrometer, X-ray diffraction and micro-hardness tests. The results showed that the thickening of diffusion layers corresponds to amount of deformation. In addition to thickening of the diffusion layers, the thickness of aluminum layers decreased and after annealing treatment at 750 °C for 6 h the aluminum layers were consumed entirely, which occurred because of the enhanced interdiffusion of Ti and Al elements. Scanning electron microscope equipped with energy dispersive spectrometer showed that the sequence of interfacial layers as Ti3Al-TiAl-TiAl2-TiAl3 which are believed to be the result of thermodynamic and kinetic of phase formation. Micro-hardness results presented the variation profile in accordance with the sequence of intermetallic phases and their different structures.

Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

NASA Astrophysics Data System (ADS)

Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

2016-09-01

A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

Multi-phase back contacts for CIS solar cells

DOEpatents

Rockett, A.A.; Yang, L.C.

1995-12-19

Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe{sub 2} where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor. 15 figs.

Multi-phase back contacts for CIS solar cells

DOEpatents

Rockett, Angus A.; Yang, Li-Chung

1995-01-01

Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe.sub.2 where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor.

Interdiffusion and reaction between pure magnesium and aluminum alloy 6061

DOE PAGES

Kammerer, C. C.; Fu, Mian; Zhou, Le; ...

2015-06-01

Using solid-to-solid couples investigation, this study characterized the reaction products evolved and quantified the diffusion kinetics when pure Mg bonded to AA6061 is subjected to thermal treatment at 300°C for 720 hours, 350°C for 360 hours, and 400°C for 240 hours. Characterization techniques include optical microscopy, scanning electron microscopy with X-ray energy dispersive spectroscopy, and transmission electron microscopy. Parabolic growth constants were determined for γ-Mg 17Al 12, β-Mg 2Al 3, and the elusive ε-phase. Similarly, the average effective interdiffusion coefficients of major constituents were calculated for Mg (ss), γ-Mg 17Al 12, β-Mg 2Al 3, and AA6061. The activation energies andmore » pre-exponential factors for both parabolic growth constant and average effective interdiffusion coefficients were computed using the Arrhenius relationship. The activation energy for growth of γ-Mg 17Al 12 was significantly higher than that for β-Mg 2Al 3 while the activation energy for interdiffusion of γ-Mg 17Al 12 was only slightly higher than that for β-Mg 2Al 3. As a result, comparisons are made between the results of this study and those of diffusion studies between pure Mg and pure Al to examine the influence of alloying additions in AA6061.« less

Interfacial characterization of ceramic core materials with veneering porcelain for all-ceramic bi-layered restorative systems.

PubMed

Tagmatarchis, Alexander; Tripodakis, Aris-Petros; Filippatos, Gerasimos; Zinelis, Spiros; Eliades, George

2014-01-01

The aim of the study was to characterize the elemental distribution at the interface between all-ceramic core and veneering porcelain materials. Three groups of all-ceramic cores were selected: A) Glass-ceramics (Cergo, IPS Empress, IPS Empress 2, e-max Press, Finesse); B) Glass-infiltrated ceramics (Celay Alumina, Celay Zirconia) and C) Densely sintered ceramics (Cercon, Procera Alumina, ZirCAD, Noritake Zirconia). The cores were combined with compatible veneering porcelains and three flat square test specimens were produced for each system. The core-veneer interfaces were examined by scanning electron microscopy and energy dispersive x-ray microanalysis. The glass-ceramic systems showed interfacial zones reach in Si and O, with the presence of K, Ca, Al in core and Ca, Ce, Na, Mg or Al in veneer material, depending on the system tested. IPS Empress and IPS Empress 2 demonstrated distinct transitional phases at the core-veneer interface. In the glassinfiltrated systems, intermixing of core (Ce, La) with veneer (Na, Si) elements occurred, whereas an abrupt drop of the core-veneer elemental concentration was documented at the interfaces of all densely sintered ceramics. The results of the study provided no evidence of elemental interdiffusion at the core-veneer interfaces in densely sintered ceramics, which implies lack of primary chemical bonding. For the glass-containing systems (glassceramics and glass-infiltrated ceramics) interdiffusion of the glass-phase seems to play a critical role in establishing a primary bonding condition between ceramic core and veneering porcelain.

Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading

NASA Astrophysics Data System (ADS)

Kwon, S.-Y.; Cho, M.-H.; Moon, P.; Kim, H. J.; Na, H.; Seo, H.-C.; Kim, H. J.; Shin, Y.; Moon, D. W.; Sun, Y.; Cho, Y.-H.; Yoon, E.

2004-09-01

We grew high quality In-rich InGaN/GaN single quantum well (SQW) structures by metal-organic chemical vapor deposition using growth interruption and obtained a sharp photoluminescence peak in near-ultraviolet (UV) region. During In-rich InGaN well layer growth, only TMIn and ammonia were supplied, however, atomic interdiffusion as well as defect generation occurred to relieve large lattice mismatch over 10% between InN and GaN. From medium-energy ion scattering measurement and subsequent fitting of the spectrum, we could find that the InGaN well layer was In-rich and it has 60-70% indium content. We also found the compositional grading of indium at top and bottom InGaN/GaN interfaces. The Fourier series method was used to calculate the energy levels and envelope functions in In-rich InGaN/GaN SQW with compositional grading and we could quantitatively explain the near-UV emission observed from the SQW.

Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices.

PubMed

Takizawa, M; Wadati, H; Tanaka, K; Hashimoto, M; Yoshida, T; Fujimori, A; Chikamatsu, A; Kumigashira, H; Oshima, M; Shibuya, K; Mihara, T; Ohnishi, T; Lippmaa, M; Kawasaki, M; Koinuma, H; Okamoto, S; Millis, A J

2006-08-04

We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. A finite coherent spectral weight with a clear Fermi cutoff was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an "electronic reconstruction" occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 interfaces annealed at high temperatures (approximately 1000 degrees C), which leads to Sr/La atomic interdiffusion and hence to the formation of La(1-x)Sr(x)TiO3-like material, the intensity of the incoherent part was found to be dramatically reduced whereas the coherent part with a sharp Fermi cutoff was enhanced due to the spread of charge. These important experimental features are well reproduced by layer dynamical-mean-field-theory calculation.

Behavior of an improved Zr fuel cladding with oxidation resistant coating under loss-of-coolant accident conditions

NASA Astrophysics Data System (ADS)

Park, Dong Jun; Kim, Hyun Gil; Jung, Yang Il; Park, Jung Hwan; Yang, Jae Ho; Koo, Yang Hyun

2016-12-01

This study investigates protective coatings for improving the high temperature oxidation resistance of Zr fuel claddings for light water nuclear reactors. FeCrAl alloy and Cr layers were deposited onto Zr plates and tubes using cold spraying. For the FeCrAl/Zr system, a Mo layer was introduced between the FeCrAl coating and the Zr matrix to prevent inter-diffusion at high temperatures. Both the FeCrAl and Cr coatings improved the oxidation resistance compared to that of the uncoated Zr alloy when exposed to a steam environment at 1200 °C. The ballooning behavior and mechanical properties of the coated cladding samples were studied under simulated loss-of-coolant accident conditions. The coated samples showed higher burst temperatures, lower circumferential strain, and smaller rupture openings compared to the uncoated Zr. Although 4-point bend tests of the coated samples showed a small increase in the maximum load, ring compression tests of a sectioned sample showed increased ductility.

Anomalous x-ray diffraction on InAs/GaAs quantum dot systems

NASA Astrophysics Data System (ADS)

Schulli, T. U.; Sztucki, M.; Chamard, V.; Metzger, T. H.; Schuh, D.

2002-07-01

Free-standing InAs quantum dots on a GaAs (001) substrate have been investigated using grazing incidence x-ray diffraction. To suppress the strong scattering contribution from the GaAs substrate, we performed anomalous diffraction experiments at the superstructure (200) reflection, showing that the relative intensities from the dots and the substrate undergo a significant change with the x-ray energy below and above the As K edge. Since the signal from the substrate material can essentially be suppressed, this method is ideally suited for the investigation of strain, shape, and interdiffusion of buried quantum dots and quantum dots embedded in heteroepitaxial multilayers. In addition, we show that it can be used as a tool for studying wetting layers.

Technologies for thermal management of mid-IR Sb-based surface emitting lasers

NASA Astrophysics Data System (ADS)

Perez, J.-P.; Laurain, A.; Cerutti, L.; Sagnes, I.; Garnache, A.

2010-04-01

In this paper, for the first time to our knowledge, we report and demonstrate the technological steps dedicated to thermal management of antimonide-based surface emitting laser devices grown by molecular beam epitaxy. Key points of the technological process are firstly the bonding of the structure on the SiC host substrate and secondly the GaSb substrate removal to leave the Sb-based membrane. The structure design (etch stop layer, metallic mirror, etc), bonding process (metallic bonding via solid-liquid interdiffusion) and GaSb substrate removal process (selective wet-chemical etchants, etc) are presented. Optical characterizations together with external-cavity VCSEL laser emission at 2.3 µm at room temperature in continuous wave are presented.

Long-term evaluation of solid oxide fuel cell candidate materials in a 3-cell generic stack test fixture, part III: Stability and microstructure of Ce-(Mn,Co)-spinel coating, AISI441 interconnect, alumina coating, cathode and anode

NASA Astrophysics Data System (ADS)

Chou, Yeong-Shyung; Stevenson, Jeffry W.; Choi, Jung-Pyung

2014-07-01

A generic solid oxide fuel cell stack test fixture was developed to evaluate candidate materials and processing under realistic conditions. Part III of the work investigated the stability of Ce-(Mn,Co) spinel coating, AISI441 metallic interconnect, alumina coating, and cell's degradation. After 6000 h test, the spinel coating showed densification with some diffusion of Cr. At the metal interface, segregation of Si and Ti was observed, however, no continuous layer formed. The alumina coating for perimeter sealing areas appeared more dense and thick at the air side than the fuel side. Both the spinel and alumina coatings remained bonded. EDS analysis of Cr within the metal showed small decrease in concentration near the coating interface and would expect to cause no issue of Cr depletion. Inter-diffusion of Ni, Fe, and Cr between spot-welded Ni wire and AISI441 interconnect was observed and Cr-oxide scale formed along the circumference of the weld. The microstructure of the anode and cathode was discussed relating to degradation of the top and middle cells. Overall, the Ce-(Mn,Co) spinel coating, alumina coating, and AISI441 steel showed the desired long-term stability and the developed generic stack fixture proved to be a useful tool to validate candidate materials for SOFC.

Interdiffusion behaviors in doped molybdenum uranium and aluminum or aluminum silicon dispersion fuels: Effects of the microstructure

NASA Astrophysics Data System (ADS)

Allenou, J.; Tougait, O.; Pasturel, M.; Iltis, X.; Charollais, F.; Anselmet, M. C.; Lemoine, P.

2011-09-01

Si addition to Al is considered as a promising route to reduce (U,Mo)-Al interaction kinetics, due to its accumulation in the interaction layer, yielding the formation of silicide phases. The (U,Mo) alloy microstructure, and especially its homogenization state, could play a role on this accumulation process. The addition of a third element in γ(U,Mo) could also influence diffusion mechanisms of Al and Si. These two parameters were studied by means of diffusion couple experiments by joining γU based alloys with Al and (Al,Si) alloy. Chemical elements X added into γ(U,Mo) were thoroughly chosen on the following criteria: (i) the potential solubility of the alloying element into the γ(U,Mo) matrix, (ii) its capability to form the ternary aluminides based on the CeCr 2Al 20 and Ho 6Mo 4Al 43 - types, and (iii) the feasibility to control the microstructure of the alloys. On this basis, a test matrix is defined. It concerns γ(U80,Mo15,X5) alloys (in at.%) with X = Y, Cu, Zr, Ti or Cr. These alloys were homogenized and coupled with Al or (Al,Si) alloy. Results evidenced, first, the importance of the state of homogenization of the γ(U,Mo) binary alloy on interaction processes with (Al,Si) alloy, and the benefit on the diffusion of Si through the interaction layer, as observed on the elementary concentration profiles, when the third element X has some solubility into γ(U,Mo) alloy.

Dynamics of the phase formation process upon the low temperature selenization of Cu/In-multilayer stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oertel, M., E-mail: michael.oertel@uni-jena.de; Ronning, C.

2015-03-14

Phase reactions occurring during a low temperature selenization of thin In/Cu-multilayer stacks were investigated by ex-situ x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS). Therefore, dc-sputtered In/Cu-multilayers onto molybdenum coated soda lime glass were selenized in a high vacuum system at temperatures between 260 and 340 °C with different dwell times and selenium supply. The combination of the results of the phase analysis by XRD and the measurements of the in-depth elemental distribution by EDS allowed a conclusion on the occurring reactions within the layer depth. We found two CuInSe{sub 2} formation processes depending on the applied temperature. Already, atmore » a heater temperature of 260 °C, the CuInSe{sub 2} formation can occur by the reaction of Cu{sub 2−x}Se with In{sub 4}Se{sub 3} and Se. At 340 °C, CuInSe{sub 2} is formed by the reaction of Cu{sub 2−x}Se with InSe and Se. Because both reactions need additional selenium, the selenium supply during the selenization can shift the reaction equilibria either to the metal binaries side or to the CuInSe{sub 2} side. Interestingly, a lower selenium supply shifts the equilibrium to the CuInSe{sub 2} side, because the amount of selenium incorporated into the metallic layer is higher for a lower selenium supply. Most likely, a larger number of grain boundaries are the reason for the stronger selenium incorporation. The results of the phase formation studies were used to design a two stage selenization process to get a defined structure of an indium selenide- and a copper selenide-layer at low temperatures as the origin for a controlled interdiffusion to form the CuInSe{sub 2}-absorber-layer at higher temperatures. The approach delivers a CuInSe{sub 2} absorber which reach total area efficiencies of 11.8% (13.0% active area) in a CuInSe{sub 2}-thin-film solar cell. A finished formation of CuInSe{sub 2} at low temperature was not observed in our experiments but is probably possible for longer dwell times.« less

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

PubMed

Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

2018-02-26

Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

Rheology, thermography, and interlayer welding in polymer extrusion 3D printing

NASA Astrophysics Data System (ADS)

Seppala, Jonathan; Davis, Chelsea; Migler, Kalman

In polymer extrusion 3D printing, thermoplastic filament is extruded though a rastering nozzle onto previously deposited layers. The resulting strength of the 3D produced part is limited by the strength of the weld between each layer. During this thermal processing, the temperature of the interface between layers dictates the chain mobility, interdiffusion, entanglement, and thus weld strength. In quiescent welding experiments, it has been found that the weld strength in symmetric linear polymer systems scales with t 0.25, where t is the isothermal annealing time, before plateauing to the bulk strength. However, 3D printing is highly non isothermal and we calculated an equivalent isothermal annealing time using a combination of in situ infrared thermography and horizontal shift factors from offline rheological measurements of the neat polymer. Interlayer adhesion energy was measured directly by mode III fracture using a simplified geometry limiting the measurement to a single interlayer. Since the processing conditions are known a prioi this approach provides the data needed to estimate the final build strength at time of design. The resulting agreement between annealing time and adhesion energy for a range of printing conditions and thermoplastics are discussed.

Comparing XPS on bare and capped ZrN films grown by plasma enhanced ALD: Effect of ambient oxidation

NASA Astrophysics Data System (ADS)

Muneshwar, Triratna; Cadien, Ken

2018-03-01

In this article we compare x-ray photoelectron spectroscopy (XPS) measurements on bare- and capped- zirconium nitride (ZrN) films to investigate the effect of ambient sample oxidation on the detected bound O in the form of oxide ZrO2 and/or oxynitride ZrOxNy. ZrN films in both bare- and Al2O3/AlN capped- XPS samples were grown by plasma-enhanced atomic layer deposition (PEALD) technique using tetrakis dimethylamino zirconium (TDMAZr) precursor, forming gas (5% H2, rest N2) inductively coupled plasma (ICP), and as received research grade process gases under identical process conditions. Capped samples were prepared by depositing 1 nm thick PEALD AlN on ZrN, followed by additional deposition of 1 nm thick ALD Al2O3, without venting of ALD reactor. On bare ZrN sample at room temperature, spectroscopic ellipsometry (SE) measurements with increasing ambient exposure times (texp) showed a self-limiting surface oxidation with the oxide thickness (dox) approaching 3.7 ± 0.02 nm for texp > 120 min. In XPS data measured prior to sample sputtering (tsput = 0), ZrO2 and ZrOxNy were detected in bare- samples, whereas only ZrN and Al2O3/AlN from capping layer were detected in capped- samples. For bare-ZrN samples, appearance of ZrO2 and ZrOxNy up to sputter depth (dsput) of 15 nm in depth-profile XPS data is in contradiction with measured dox = 3.7 nm, but explained from sputtering induced atomic inter-diffusion within analyzed sample. Appearance of artifacts in the XPS spectra from moderately sputtered (dsput = 0.2 nm and 0.4 nm) capped-ZrN sample, provides an evidence to ion-bombardment induced modifications within analyzed sample.

Interdiffusion between the L1(2) trialuminides Al66Ti25Mn9 and Al67Ti25Cr8

NASA Technical Reports Server (NTRS)

Kumar, K. S.; Whittenberger, J. D.

1992-01-01

Concentration-distance profiles obtained from Al66Ti25Mn9/Al67Ti25Cr8 diffusion couples are used to determine the interdiffusion coeffients in the temperature range 1373-1073 K. The couples are treated as pseudobinaries, and the diffusion coefficients are determined using the Matano approach. The results are then used to compute the activation energies for diffusion, and a comparison is made with some existing data for the activation energy for creep of Al22Ti8Fe3.

High-density interconnect substrates and device packaging using conductive composites

NASA Astrophysics Data System (ADS)

Gandhi, Pradeep; Gallagher, Catherine; Matijasevic, Goran

1998-02-01

High-end printed circuit board manufacturing technology is receiving increasing attention due to higher functionality in smaller form factors. This is evident from the industry efforts to produced reliable microvias and related trace features to pack as much circuit density as possible. Cost, density and performance requirements have prodded entry into a market that was mainly reserved for ceramic and molded packages for the last forty years. To successfully meet the demanding specifications of this market segment, a worldwide effort is underway for the development of new materials, processes and equipment. A novel base technology that is applicable to most of the major packaging and redistribution elements in an electronic module is presented.High density multilayer circuits with landless blind and buried vias can be fabricated by filling the conductor paste into photoimaged dielectrics and thermally processing it at a relatively lower temperature. Via layers are prepared directly on the inherently planarized circuit layer in an identical fashion. Because these composite materials are applied in an additive fabrication method, metal substrates can be employed for high thermal dissipation and excellent CTE control over a wide temperature range. The conductor material is based on interpenetrating polymer and metal networks that are formed in situ from metal particles and a thermosetting flux/binder. The metal network is formed when the alloy particles melt and react with adjacent high melting point metal particle. Interaction also occurs between the alloy particles and pad, lead or previous trace metallizations provided they are solderable by alloys of tin. The new alloy composition created by the interdiffusion process within the bulk material has a higher melting point than the original alloy and thus solidifies immediately upon formation. This metallurgical reaction, known as transient liquid phase sintering, is facilitated by the polymer mixture. INtegration of the polymer and metal networks is maintained by utilizing a thermosetting polymer system that cures simultaneously with the metallurgical reaction. Although similar in concept and performance to cermet inks, these compositions differ in that their process temperatures are compatible with conventional printed wiring board materials and that the polymeric binder remains to provide adhesion and fatigue resistance to the metallurgical network.

Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

PubMed

Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

2017-05-24

The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

Role of Si on the Diffusional Interactions Between U-Mo and Al-Si Alloys at 823 K (550 °C)

NASA Astrophysics Data System (ADS)

Perez, Emmanuel; Sohn, Yong-Ho; Keiser, Dennis D.

2013-01-01

U-Mo dispersions in Al-alloy matrix and monolithic fuels encased in Al-alloy are under development to fulfill the requirements for research and test reactors to use low-enriched molybdenum stabilized uranium alloy fuels. Significant interaction takes place between the U-Mo fuel and Al during manufacturing and in-reactor irradiation. The interaction products are Al-rich phases with physical and thermal characteristics that adversely affect fuel performance and result in premature failure. Detailed analysis of the interdiffusion and microstructural development of this system was carried through diffusion couples consisting of U-7 wt pct Mo, U-10 wt pct Mo and U-12 wt pct Mo in contact with pure Al, Al-2 wt pct Si, and Al-5 wt pct Si, annealed at 823 K (550 °C) for 1, 5 and 20 hours. Scanning electron microscopy and transmission electron microscopy were employed for the analysis. Diffusion couples consisting of U-Mo in contact with pure Al contained UAl3, UAl4, U6Mo4Al43, and UMo2Al20 phases. Additions of Si to the Al significantly reduced the thickness of the interdiffusion zone. The interdiffusion zones developed Al- and Si-enriched regions, whose locations and size depended on the Si and Mo concentrations in the terminal alloys. In these couples, the (U,Mo)(Al,Si)3 phase was observed throughout the interdiffusion zone, and the U6Mo4Al43 and UMo2Al20 phases were observed only where the Si concentrations were low.

Oxidized Ni/Au Transparent Electrode in Efficient CH3 NH3 PbI3 Perovskite/Fullerene Planar Heterojunction Hybrid Solar Cells.

PubMed

Lai, Wei-Chih; Lin, Kun-Wei; Wang, Yuan-Ting; Chiang, Tsung-Yu; Chen, Peter; Guo, Tzung-Fang

2016-05-01

The successful application of a Ni/Au transparent electrode for fabricating efficient perovskite-based solar cells is demonstrated. Through interdiffusion of the Ni/Au bilayer, Au forms an interconnected metallic network structure as the transparent electrode. Ni diffuses to the bilayer surface and oxidizes into NiOx becoming an appropriate electrode interlayer. These ITO- and PSS-free devices have potential applications in the design of future cost-effective, low-weight, and stable solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cu-Sn Intermetallic Compound Joints for High-Temperature Power Electronics Applications

NASA Astrophysics Data System (ADS)

Lee, Byung-Suk; Yoon, Jeong-Won

2018-01-01

Cu-Sn solid-liquid interdiffusion (SLID) bonded joints were fabricated using a Sn-Cu solder paste and Cu for high-temperature power electronics applications. The interfacial reaction behaviors and the mechanical properties of Cu6Sn5 and Cu3Sn SLID-bonded joints were compared. The intermetallic compounds formed at the interfaces in the Cu-Sn SLID-bonded joints significantly affected the die shear strength of the joint. In terms of thermal and mechanical properties, the Cu3Sn SLID-bonded joint was superior to the conventional solder and the Cu6Sn5 SLID-bonded joints.

Homoepitaxial graphene tunnel barriers for spin transport

NASA Astrophysics Data System (ADS)

Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

2016-05-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Effects of Laser Power Level on Microstructural Properties and Phase Composition of Laser-Clad Fluorapatite/Zirconia Composite Coatings on Ti6Al4V Substrates.

PubMed

Chien, Chi-Sheng; Liu, Cheng-Wei; Kuo, Tsung-Yuan

2016-05-17

Hydroxyapatite (HA) is one of the most commonly used materials for the coating of bioceramic titanium (Ti) alloys. However, HA has poor mechanical properties and a low bonding strength. Accordingly, the present study replaces HA with a composite coating material consisting of fluorapatite (FA) and 20 wt % yttria (3 mol %) stabilized zirconia (ZrO₂, 3Y-TZP). The FA/ZrO₂ coatings are deposited on Ti6Al4V substrates using a Nd:YAG laser cladding system with laser powers and travel speeds of 400 W/200 mm/min, 800 W/400 mm/min, and 1200 W/600 mm/min, respectively. The experimental results show that a significant inter-diffusion of the alloying elements occurs between the coating layer (CL) and the transition layer (TL). Consequently, a strong metallurgical bond is formed between them. During the cladding process, the ZrO₂ is completely decomposed, while the FA is partially decomposed. As a result, the CLs of all the specimens consist mainly of FA, Ca₄(PO₄)₂O (TTCP), CaF₂, CaZrO₃, CaTiO₃ and monoclinic phase ZrO₂ (m-ZrO₂), together with a small amount of θ-Al₂O₃. As the laser power is increased, CaO, CaCO₃ and trace amounts of tetragonal phase ZrO₂ (t-ZrO₂) also appear. As the laser power increases from 400 to 800 W, the CL hardness also increases as a result of microstructural refinement and densification. However, at the highest laser power of 1200 W, the CL hardness reduces significantly due to the formation of large amounts of relatively soft CaO and CaCO₃ phase.

Effect of Pd Surface Roughness on the Bonding Process and High Temperature Reliability of Au Ball Bonds

NASA Astrophysics Data System (ADS)

Huang, Y.; Kim, H. J.; McCracken, M.; Viswanathan, G.; Pon, F.; Mayer, M.; Zhou, Y. N.

2011-06-01

A 0.3- μm-thick electrolytic Pd layer was plated on 1 μm of electroless Ni on 1 mm-thick polished and roughened Cu substrates with roughness values ( R a) of 0.08 μm and 0.5 μm, respectively. The rough substrates were produced with sand-blasting. Au wire bonding on the Ni/Pd surface was optimized, and the electrical reliability was investigated under a high temperature storage test (HTST) during 800 h at 250°C by measuring the ball bond contact resistance, R c. The average value of R c of optimized ball bonds on the rough substrate was 1.96 mΩ which was about 40.0% higher than that on the smooth substrate. The initial bondability increased for the rougher surface, so that only half of the original ultrasonic level was required, but the reliability was not affected by surface roughness. For both substrate types, HTST caused bond healing, reducing the average R c by about 21% and 27%, respectively. Au diffusion into the Pd layer was observed in scanning transmission electron microscopy/ energy dispersive spectroscopy (STEM-EDS) line-scan analysis after HTST. It is considered that diffusion of Au or interdiffusion between Au and Pd can provide chemically strong bonding during HTST. This is supported by the R c decrease measured as the aging time increased. Cu migration was indicated in the STEM-EDS analysis, but its effect on reliability can be ignored. Au and Pd tend to form a complete solid solution at the interface and can provide reliable interconnection for high temperature (250°C) applications.

Demonstration of thin film pair distribution function analysis (tfPDF) for the study of local structure in amorphous and crystalline thin films

DOE PAGES

Jensen, K. M.Ø.; Blichfeld, A. B.; Bauers, S. R.; ...

2015-07-05

By means of normal incidence, high flux and high energy x-rays, we have obtained total scattering data for Pair Distribution Function (PDF) analysis from thin films (tf), suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. We illustrate the ‘tfPDF’ method through studies of as depositedmore » (i.e. amorphous) and crystalline FeSb 3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb 3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb 3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb 6 octahedra with motifs highly resembling the local structure in crystalline FeSb 3. Analysis of the amorphous structure allows predicting whether the final crystalline product will form the FeSb 3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films.« less

Demonstration of thin film pair distribution function analysis (tfPDF) for the study of local structure in amorphous and crystalline thin films

PubMed Central

Jensen, Kirsten M. Ø.; Blichfeld, Anders B.; Bauers, Sage R.; Wood, Suzannah R.; Dooryhée, Eric; Johnson, David C.; Iversen, Bo B.; Billinge, Simon J. L.

2015-01-01

By means of normal-incidence, high-flux and high-energy X-rays, total scattering data for pair distribution function (PDF) analysis have been obtained from thin films (tf), suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. The ‘tfPDF’ method is illustrated through studies of as-deposited (i.e. amorphous) and crystalline FeSb3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb6 octahedra with motifs highly resembling the local structure in crystalline FeSb3. Analysis of the amorphous structure allows the prediction of whether the final crystalline product will form the FeSb3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films. PMID:26306190

Growing Oxide Nanowires and Nanowire Networks by Solid State Contact Diffusion into Solution-Processed Thin Films.

PubMed

Glynn, Colm; McNulty, David; Geaney, Hugh; O'Dwyer, Colm

2016-11-01

New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparticle seed deposition or postsynthesis nanowire casting will bridge the gap between bottom-up formation and top-down processing for many electronic, photonic, energy storage, and conversion technologies. Whether etched top-down, or grown from catalyst nanoparticles bottom-up, nanowire growth relies on heterogeneous material seeds. Converting surface oxide films, ubiquitous in the microelectronics industry, to nanowires and nanowire networks by the incorporation of extra species through interdiffusion can provide an alternative deposition method. It is shown that solution-processed thin films of oxides can be converted and recrystallized into nanowires and networks of nanowires by solid-state interdiffusion of ionic species from a mechanically contacted donor substrate. NaVO 3 nanowire networks on smooth Si/SiO 2 and granular fluorine-doped tin oxide surfaces can be formed by low-temperature annealing of a Na diffusion species-containing donor glass to a solution-processed V 2 O 5 thin film, where recrystallization drives nanowire growth according to the crystal habit of the new oxide phase. This technique illustrates a new method for the direct formation of complex metal oxide nanowires on technologically relevant substrates, from smooth semiconductors, to transparent conducting materials and interdigitated device structures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of transparent zinc oxide-based contacts for high performance III-nitride light emitting diodes

NASA Astrophysics Data System (ADS)

Jung, Sungpyo

In this dissertation, we investigate Al-doped ZnO(AZO) contact structure to a variety of GaN LED structures. Our results show that ZnO is a potentially viable transparent contact for GaN-based LEDs. We began our investigation by depositing AZO and Ni/AZO contacts to p-GaN. However, these contacts are highly resistive. Next, we deposited thin Ni/Au layer, oxidized the Ni/Au layer to form a good ohmic contact to p-GaN, and then followed by the deposition of thick AZO layer. However, the electrical resistance of oxidized Ni/Au-AZO contacts is higher than that of the conventional Ni/Au contacts. We solve the high contact resistance problem by using a two-step thermal annealing process. In this method, Ni/Au layer is deposited first followed by the AZO layer without any annealing step. After finishing the device fabrication, the samples are annealed in air first to achieve low contact resistance with Ni/Au/AZO and p-GaN and then annealed in nitrogen to achieve low sheet resistance for the AZO layer. The improved electrical and optical characteristics of this scheme compared to conventional Ni/Au contact scheme are demonstrated on a variety of GaN LEDs: blue, green, small area, large area and bottom emitting LEDs. The benefits of ZnO-based contacts are more significant in large area LEDs that include lower forward voltage, and higher optical emission, better emission uniformity and reliability. The advantages of ZnO-based contact in terms of lower contact resistance and higher optical emission on LED fabricated on roughened GaN wafers are also demonstrated. For bottom emitting LED structure intended for flip chip applications, our original oxidized Ni/Au layer over coated with either Al or Ag contacts have shown to simultaneously yield superior I-V characteristics and greatly enhanced optical performance compared to conventional LEDs using a thick Ni/Au contact in the flip-chip configuration. However, the contact is unstable at operating temperatures > 100°C due to close proximity of Ag and Al with p-GaN. Here, the ZnO layer probably can be interdiffusion barrier layer of Al into GaN. We have demonstrated low contact resistance and higher light emission by using ZnO as a barrier material between oxidize Ni/Au and Al reflecting layer. In summary, our investigation demonstrates the applicability of ZnO-based transparent contacts for high performance LEDs that will be larger in size and are expected to be operating at higher current for solid-state lighting of the future. (Abstract shortened by UMI.)

Enhanced thermal stability of Cu alloy films by strong interaction between Ni and Zr (or Fe)

NASA Astrophysics Data System (ADS)

Zheng, Yuehong; Li, Xiaona; Cheng, Xiaotian; Li, Zhuming; Liu, Yubo; Dong, Chuang

2018-04-01

Low resistivity, phase stability and nonreactivity with surrounding dielectrics are the key to the application of Cu to ultra-large-scale integrated circuits. Here, a stable solid solution cluster model was introduced to design the composition of barrierless Cu-Ni-Zr (or Fe) seed layers. The third elements Fe and Zr were dissolved into Cu via a second element Ni, which is soluble in both Cu and Zr (or Fe). The films were prepared by magnetron sputtering on the single-crystal p-Si (1 0 0) wafers. Since the diffusion characteristics of the alloying elements are different, the effects of the strong interaction between Ni and Zr (or Fe) on the film’s stability and resistivity were studied. The results showed that a proper addition of Zr-Ni (Zr/Ni  ⩽  0.6/12) into Cu could form a large negative lattice distortion, which inhibits Cu-Si interdiffusion and enhances the stability of Cu film. When Fe-Ni was co-added into Cu, the lattice distortion of Cu reached a lower value, 0.0029 Å  ⩽  |Δa|  ⩽  0.0046 Å, and the films showed poor stability. Therefore, when the model is applied to the composition design of the films, the strong interaction between the elements and the addition ratio should be taken into consideration.

Auger-electron diffraction in the low kinetic-energy range: The Si(111)7×7 surface reconstruction and Ge/Si interface formation

NASA Astrophysics Data System (ADS)

de Crescenzi, M.; Gunnella, R.; Bernardini, R.; de Marco, M.; Davoli, I.

1995-07-01

We have investigated the Auger-electron diffraction (AED) of the L2,3VV Auger line of the clean 7×7 reconstructed Si(111) surface and the Ge/Si interface formed after a few monolayers (ML) of Ge deposition. The experimental AED in the low kinetic-energy regime has been interpreted within the framework of a multiple-scattering theory. The comparison of the AED data taken using both the x-ray source and an electron source evidences that the incident beam plays a negligible role when the experimental conditions require the use of an angular detector. The evolution of the Ge/Si(111) interface is studied by monitoring the intensity anisotropy of the Auger peaks of the two elements at room temperature (RT) and at 400 °C annealing temperature of the substrate. The evolution of the growth mechanism underlying the Ge/Si interface formation has been studied by exploiting the very low electron escape depth of this technique (<=5 Å). While at RT two monolayers of Ge deposition appear uniform and amorphous, the successive annealing induces an intermixing and a recrystallization only in the first two layers of the interface without any further interdiffusion. Furthermore, a Stranski-Krastanow growth mode has been deduced after deposition of 4 ML of Ge on a clean Si sample kept at 400 °C.

Investigation on interfacial and electrical properties of Ge MOS capacitor with different NH3-plasma treatment procedure

NASA Astrophysics Data System (ADS)

Liu, Xiaoyu; Xu, Jingping; Liu, Lu; Cheng, Zhixiang; Huang, Yong; Gong, Jingkang

2017-08-01

The effects of different NH3-plasma treatment procedures on interfacial and electrical properties of Ge MOS capacitors with stacked gate dielectric of HfTiON/TaON were investigated. The NH3-plasma treatment was performed at different steps during fabrication of the stacked gate dielectric, i.e. before or after interlayer (TaON) deposition, or after deposition of high-k dielectric (HfTiON). It was found that the excellent interface quality with an interface-state density of 4.79 × 1011 eV-1 cm-2 and low gate leakage current (3.43 × 10-5 A/cm2 at {V}{{g}}=1 {{V}}) could be achieved for the sample with NH3-plasma treatment directly on the Ge surface before TaON deposition. The involved mechanisms are attributed to the fact that the NH3-plasma can directly react with the Ge surface to form more Ge-N bonds, i.e. more GeO x Ny, which effectively blocks the inter-diffusion of elements and suppresses the formation of unstable GeO x interfacial layer, and also passivates oxygen vacancies and dangling bonds near/at the interface due to more N incorporation and decomposed H atoms from the NH3-plasma. Project supported by the National Natural Science Foundation of China (Nos. 61176100, 61274112).

Accelerated Metastable Solid-liquid Interdiffusion Bonding with High Thermal Stability and Power Handling

NASA Astrophysics Data System (ADS)

Huang, Ting-Chia; Smet, Vanessa; Kawamoto, Satomi; Pulugurtha, Markondeya R.; Tummala, Rao R.

2018-01-01

Emerging high-performance systems are driving the need for advanced packaging solutions such as 3-D integrated circuits (ICs) and 2.5-D system integration with increasing performance and reliability requirements for off-chip interconnections. Solid-liquid interdiffusion (SLID) bonding resulting in all-intermetallic joints has been proposed to extend the applicability of solders, but faces fundamental and manufacturing challenges hindering its wide adoption. This paper introduces a Cu-Sn SLID interconnection technology, aiming at stabilization of the microstructure in the Cu6Sn5 metastable phase rather than the usual stable Cu3Sn phase. This enables formation of a void-free interface yielding higher mechanical strength than standard SLID bonding, as well as significantly reducing the transition time. The metastable SLID technology retains the benefits of standard SLID with superior I/O pitch scalability, thermal stability and current handling capability, while advancing assembly manufacturability. In the proposed concept, the interfacial reaction is controlled by introducing Ni(P) diffusion barrier layers, designed to effectively isolate the metastable Cu6Sn5 phase preventing any further transformation. Theoretical diffusion and kinetic models were applied to design the Ni-Cu-Sn interconnection stack to achieve the targeted joint composition. A daisy chain test vehicle was used to demonstrate this technology as a first proof of concept. Full transition to Cu6Sn5 was successfully achieved within a minute at 260°C as confirmed by scanning electron microscope (SEM) and x-ray energy dispersive spectroscopy (XEDS) analysis. The joint composition was stable through 10× reflow, with outstanding bond strength averaging 90 MPa. The metastable SLID interconnections also showed excellent electromigration performance, surviving 500 h of current stressing at 105 A/cm2 at 150°C.

Interdiffusion Reaction-Assisted Hybridization of Two-Dimensional Metal-Organic Frameworks and Ti3C2Tx Nanosheets for Electrocatalytic Oxygen Evolution.

PubMed

Zhao, Li; Dong, Biliang; Li, Shaozhou; Zhou, Lijun; Lai, Linfei; Wang, Zhiwei; Zhao, Shulin; Han, Min; Gao, Kai; Lu, Min; Xie, Xiaoji; Chen, Bo; Liu, Zhengdong; Wang, Xiangjing; Zhang, Hao; Li, Hai; Liu, Juqing; Zhang, Hua; Huang, Xiao; Huang, Wei

2017-06-27

Two-dimensional (2D) metal-organic framework (MOF) nanosheets have been recently regarded as the model electrocatalysts due to their porous structure, fast mass and ion transfer through the thickness, and large portion of exposed active metal centers. Combining them with electrically conductive 2D nanosheets is anticipated to achieve further improved performance in electrocatalysis. In this work, we in situ hybridized 2D cobalt 1,4-benzenedicarboxylate (CoBDC) with Ti 3 C 2 T x (the MXene phase) nanosheets via an interdiffusion reaction-assisted process. The resulting hybrid material was applied in the oxygen evolution reaction and achieved a current density of 10 mA cm -2 at a potential of 1.64 V vs reversible hydrogen electrode and a Tafel slope of 48.2 mV dec -1 in 0.1 M KOH. These results outperform those obtained by the standard IrO 2 -based catalyst and are comparable with or even better than those achieved by the previously reported state-of-the-art transition-metal-based catalysts. While the CoBDC layer provided the highly porous structure and large active surface area, the electrically conductive and hydrophilic Ti 3 C 2 T x nanosheets enabled the rapid charge and ion transfer across the well-defined Ti 3 C 2 T x -CoBDC interface and facilitated the access of aqueous electrolyte to the catalytically active CoBDC surfaces. The hybrid nanosheets were further fabricated into an air cathode for a rechargeable zinc-air battery, which was successfully used to power a light-emitting diode. We believe that the in situ hybridization of MXenes and 2D MOFs with interface control will provide more opportunities for their use in energy-based applications.

Overlay metallic-cermet alloy coating systems

NASA Technical Reports Server (NTRS)

Gedwill, M. A.; Levine, S. R.; Glasgow, T. K. (Inventor)

1984-01-01

A substrate, such as a turbine blade, vane, or the like, which is subjected to high temperature use is coated with a base coating of an oxide dispersed, metallic alloy (cermet). A top coating of an oxidation, hot corrosion, erosion resistant alloy of nickel, cobalt, or iron is then deposited on the base coating. A heat treatment is used to improve the bonding. The base coating serves as an inhibitor to interdiffusion between the protective top coating and the substrate. Otherwise, the protective top coating would rapidly interact detrimentally with the substrate and degrade by spalling of the protective oxides formed on the outer surface at elevated temperatures.

Effect of deposition temperature on thermal stabilities of copper-carbon films in barrier-less Cu metallization

NASA Astrophysics Data System (ADS)

Zhu, Huan; Fu, Zhiqiang; Xie, Qi; Yue, Wen; Wang, Chengbiao; Kang, Jiajie; Zhu, Lina

2018-01-01

Copper-carbon alloy films have been applied in barrier-less Cu metallization as seed layers for improving the thermal stabilities. The effect of the deposition temperature on the microstructure and properties of C-doped Cu films on Si substrates was investigated. The films were prepared by ion beam-assisted deposition at various deposition temperatures by co-sputtering of Cu and graphite targets. No inter-diffusion between Cu and Si was observed in Cu(C) films throughout this experiment, because XRD patterns corresponding to their deep-level reaction product, namely, Cu3Si, were not observed in XRD patterns and EDS results of Cu(C) films. Amorphous carbon layer and SiC layer were found in the interface of Cu(C) as-deposited films when deposition temperature rose to 100 °C by TEM, high-resolution image and Fourier transformation pattern. The Cu(C) films deposited at 100 °C had the best thermal stabilities and the lowest electrical resistivity of 4.44 μW cm after annealing at 400 °C for 1 h. Cu agglomeration was observed in Cu(C) alloy films with deposition temperatures of 200, 300 and 400 °C, and the most serious agglomeration occurred in Cu(C) films deposited at 200 °C. Undesired Cu agglomeration resulted in a sharp increase in the resistivity after annealing at 300 °C for 1 h. The deposition temperature of 100 °C reflected the superior thermal stabilities of Cu(C) seed layers compared with those of other layers.

High-dose neutron irradiation performance of dielectric mirrors

DOE PAGES

Nimishakavi Anantha Phani Kiran Kumar; Leonard, Keith J.; Jellison, Jr., Gerald Earle; ...

2015-05-01

The study presents the high-dose behavior of dielectric mirrors specifically engineered for radiation-tolerance: alternating layers of Al 2O 3/SiO 2 and HfO 2/SiO 2 were grown on sapphire substrates and exposed to neutron doses of 1 and 4 dpa at 458 10K in the High Flux Isotope Reactor (HFIR). In comparison to previously reported results, these higher doses of 1 and 4 dpa results in a drastic drop in optical reflectance, caused by a failure of the multilayer coating. HfO 2/SiO 2 mirrors failed completely when exposed to 1 dpa, whereas the reflectance of Al 2O 3/SiO 2 mirrors reducedmore » to 44%, eventually failing at 4 dpa. Transmission electron microscopy (TEM) observation of the Al 2O 3/SiO 2 specimens showed SiO 2 layer defects which increases size with irradiation dose. The typical size of each defect was 8 nm in 1 dpa and 42 nm in 4 dpa specimens. Buckling type delamination of the interface between the substrate and first layer was typically observed in both 1 and 4 dpa HfO 2/SiO 2 specimens. Composition changes across the layers were measured in high resolution scanning-TEM mode using energy dispersive spectroscopy. A significant interdiffusion between the film layers was observed in Al 2O 3/SiO 2 mirror, though less evident in HfO 2/SiO 2 system. Lastly, the ultimate goal of this work is the provide insight into the radiation-induced failure mechanisms of these mirrors.« less

Platinum metallization for MEMS application

PubMed Central

Guarnieri, Vittorio; Biazi, Leonardo; Marchiori, Roberto; Lago, Alexandre

2014-01-01

The adherence of Platinum thin film on Si/SiO2 wafer was studies using Chromium, Titanium or Alumina (Cr, Ti, Al2O3) as interlayer. The adhesion of Pt is a fundamental property in different areas, for example in MEMS devices, which operate at high temperature conditions, as well as in biomedical applications, where the problem of adhesion of a Pt film to the substrate is known as a major challenge in several industrial applications health and in biomedical devices, such as for example in the stents.1-4 We investigated the properties of Chromium, Titanium, and Alumina (Cr, Ti, and Al2O3) used as adhesion layers of Platinum (Pt) electrode. Thin films of Chromium, Titanium and Alumina were deposited on Silicon/Silicon dioxide (Si/SiO2) wafer by electron beam. We introduced Al2O3 as a new adhesion layer to test the behavior of the Pt film at higher temperature using a ceramic adhesion thin film. Electric behaviors were measured for different annealing temperatures to know the performance for Cr/Pt, Ti/Pt, and Al2O3/Pt metallic film in the gas sensor application. All these metal layers showed a good adhesion onto Si/SiO2 and also good Au wire bondability at room temperature, but for higher temperature than 400 °C the thin Cr/Pt and Ti/Pt films showed poor adhesion due to the atomic inter-diffusion between Platinum and the metal adhesion layers.5 The proposed Al2O3/Pt ceramic-metal layers confirmed a better adherence for the higher temperatures tested. PMID:24743057

Control of interface reactions in SIC/TI composites

NASA Technical Reports Server (NTRS)

Houska, C. R.; Rao, V.

1982-01-01

The reaction between a 0.5 to 1.0 Al film and a thick Ti substrate to form TiAl3 occurs very rapidly on heating to 635 C and causes the Al to be confined to the surface region. After heating to 900 C Ti3Al is formed with little release of Al into alpha Ti. Further annealing at 900 C eventually causes the Ti3Al phase to decompose and a substantial amount of Al is released into alpha Ti. The interdiffusion coefficient for Al in alpha Ti at 900 C increases by less than one order of magnitude as Al is varied from 0 to 20 at %. These data were obtained from the (101) X-ray diffraction intensity band using polycrystalline samples. Improvements in the analysis of X-ray diffraction data for the determination of composition profiles are discussed.

Float processing of high-temperature complex silicate glasses and float baths used for same

NASA Technical Reports Server (NTRS)

Cooper, Reid Franklin (Inventor); Cook, Glen Bennett (Inventor)

2000-01-01

A float glass process for production of high melting temperature glasses utilizes a binary metal alloy bath having the combined properties of a low melting point, low reactivity with oxygen, low vapor pressure, and minimal reactivity with the silicate glasses being formed. The metal alloy of the float medium is exothermic with a solvent metal that does not readily form an oxide. The vapor pressure of both components in the alloy is low enough to prevent deleterious vapor deposition, and there is minimal chemical and interdiffusive interaction of either component with silicate glasses under the float processing conditions. Alloys having the desired combination of properties include compositions in which gold, silver or copper is the solvent metal and silicon, germanium or tin is the solute, preferably in eutectic or near-eutectic compositions.

On the interdiffusion in multilayered silicide coatings for the vanadium-based alloy V-4Cr-4Ti

NASA Astrophysics Data System (ADS)

Chaia, N.; Portebois, L.; Mathieu, S.; David, N.; Vilasi, M.

2017-02-01

To provide protection against corrosion at high temperatures, silicide diffusion coatings were developed for the V-4Cr-4Ti alloy, which can be used as the fuel cladding in next-generation sodium-cooled fast breeder reactors. The multilayered coatings were prepared by halide-activated pack cementation using MgF2 as the transport agent and pure silicon (high activity) as the master alloy. Coated pure vanadium and coated V-4Cr-4Ti alloy were studied and compared as substrates. In both cases, the growth of the silicide layers (V3Si, V5Si3, V6Si5 and VSi2) was controlled exclusively by solid-state diffusion, and the growth kinetics followed a parabolic law. Wagner's analysis was adopted to calculate the integrated diffusion coefficients for all silicides. The estimated values of the integrated diffusion coefficients range from approximately 10-9 to 10-13 cm2 s-1. Then, a diffusion-based numerical approach was used to evaluate the growth and consumption of the layers when the coated substrates were exposed at critical temperatures. The estimated lifetimes of the upper VSi2 layer were 400 h and 280 h for pure vanadium and the V-4Cr-4Ti alloy, respectively. The result from the numeric simulation was in good agreement with the layer thicknesses measured after aging the coated samples at 1150 °C under vacuum.

Mo/Si multilayers with enhanced TiO II- and RuO II-capping layers

NASA Astrophysics Data System (ADS)

Yulin, Sergiy; Benoit, Nicolas; Feigl, Torsten; Kaiser, Norbert; Fang, Ming; Chandhok, Manish

2008-03-01

The lifetime of Mo/Si multilayer-coated projection optics is one of the outstanding issues on the road of commercialization of extreme-ultraviolet lithography (EUVL). The application of Mo/Si multilayer optics in EUVL requires both sufficient radiation stability and also the highest possible normal-incidence reflectivity. A serious problem of conventional high-reflective Mo/Si multilayers capped by silicon is the considerable degradation of reflective properties due to carbonization and oxidation of the silicon surface layer under exposure by EUV radiation. In this study, we focus on titanium dioxide (TiO II) and ruthenium dioxide (RuO II) as promising capping layer materials for EUVL multilayer coatings. The multilayer designs as well as the deposition parameters of the Mo/Si systems with different capping layers were optimized in terms of maximum peak reflectivity at the wavelength of 13.5 nm and longterm stability under high-intensive irradiation. Optimized TiO II-capped Mo/Si multilayer mirrors with an initial reflectivity of 67.0% presented a reflectivity drop of 0.6% after an irradiation dose of 760 J/mm2. The reflectivity drop was explained by the partial oxidation of the silicon sub-layer. No reflectivity loss after similar irradiation dose was found for RuO II-capped Mo/Si multilayer mirrors having initial peak reflectivity of 66%. In this paper we present data on improved reflectivity of interface-engineered TiO II- and RuO II-capped Mo/Si multilayer mirrors due to the minimization of both interdiffusion processes inside the multilayer stack and absorption loss in the oxide layer. Reflectivities of 68.5% at the wavelength of 13.4 nm were achieved for both TiO II- and RuO II-capped Mo/Si multilayer mirrors.

EUV lithography reticles fabricated without the use of a patterned absorber

DOEpatents

Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.

2006-05-23

Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.

Method for fabricating reticles for EUV lithography without the use of a patterned absorber

DOEpatents

Stearns, Daniel G [Los Altos, CA; Sweeney, Donald W [San Ramon, CA; Mirkarimi, Paul B [Sunol, CA

2003-10-21

Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages of (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.

Thermally Diffused Al:ZnO Thin Films for Broadband Transparent Conductor.

PubMed

Tong, Chong; Yun, Juhyung; Chen, Yen-Jen; Ji, Dengxin; Gan, Qiaoqiang; Anderson, Wayne A

2016-02-17

Here, we report an approach to realize highly transparent low resistance Al-doped ZnO (AZO) films for broadband transparent conductors. Thin Al films are deposited on ZnO surfaces, followed by thermal diffusion processes, introducing the Al doping into ZnO thin films. By utilizing the interdiffusion of Al, Zn, and O, the chemical state of Al on the surfaces can be converted to a fully oxidized state, resulting in a low sheet resistance of 6.2 Ω/sq and an excellent transparency (i.e., 96.5% at 550 nm and higher than 85% up to 2500 nm), which is superior compared with some previously reported values for indium tin oxide, solution processed AZO, and many transparent conducting materials using novel nanostructures. Such AZO films are also applied as transparent conducting layers for AZO/Si heterojunction solar cells, demonstrating their applications in optoelectronic devices.

Thermally Stable Ohmic Contacts on Silicon Carbide Developed for High- Temperature Sensors and Electronics

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2001-01-01

The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combustion chambers of engines for the purpose of, among other things, improving computational fluid dynamics code validation and active engine behavioral control (combustion, flow, stall, and noise). This environment can be as high as 600 degrees Celsius, which is beyond the capability of silicon and gallium arsenide devices. Silicon-carbide- (SiC-) based devices appear to be the most technologically mature among wide-bandgap semiconductors with the proven capability to function at temperatures above 500 degrees Celsius. However, the contact metalization of SiC degrades severely beyond this temperature because of factors such as the interdiffusion between layers, oxidation of the contact, and compositional and microstructural changes at the metal/semiconductor interface. These mechanisms have been proven to be device killers. Very costly and weight-adding packaging schemes that include vacuum sealing are sometimes adopted as a solution.

In situ transmission electron microscopy of transistor operation and failure.

PubMed

Wang, Baoming; Islam, Zahabul; Haque, Aman; Chabak, Kelson; Snure, Michael; Heller, Eric; Glavin, Nicholas

2018-08-03

Microscopy is typically used as a post-mortem analytical tool in performance and reliability studies on nanoscale materials and devices. In this study, we demonstrate real time microscopy of the operation and failure of AlGaN/GaN high electron mobility transistors inside the transmission electron microscope. Loading until failure was performed on the electron transparent transistors to visualize the failure mechanisms caused by self-heating. At lower drain voltages, thermo-mechanical stresses induce irreversible microstructural deformation, mostly along the AlGaN/GaN interface, to initiate the damage process. At higher biasing, the self-heating deteriorates the gate and catastrophic failure takes place through metal/semiconductor inter-diffusion and/or buffer layer breakdown. This study indicates that the current trend of recreating the events, from damage nucleation to catastrophic failure, can be replaced by in situ microscopy for a quick and accurate account of the failure mechanisms.

Thermochemical and kinetic aspects of the sulfurization of Cu-Sb and Cu-Bi thin films

NASA Astrophysics Data System (ADS)

Colombara, Diego; Peter, Laurence M.; Rogers, Keith D.; Hutchings, Kyle

2012-02-01

CuSbS2 and Cu3BiS3 are being investigated as part of a search for new absorber materials for photovoltaic devices. Thin films of these chalcogenides were produced by conversion of stacked and co-electroplated metal precursor layers in the presence of elemental sulfur vapour. Ex-situ XRD and SEM/EDS analyses of the processed samples were employed to study the reaction sequence with the aim of achieving compact layer morphologies. A new “Time-Temperature-Reaction” (TTR) diagram and modified Pilling-Bedworth coefficients have been introduced for the description and interpretation of the reaction kinetics. For equal processing times, the minimum temperature required for CuSbS2 to appear is substantially lower than for Cu3BiS3, suggesting that interdiffusion across the interfaces between the binary sulfides is a key step in the formation of the ternary compounds. The effects of the heating rate and sulfur partial pressure on the phase evolution as well as the potential losses of Sb and Bi during the processes have been investigated experimentally and the results related to the equilibrium pressure diagrams obtained via thermochemical computation.

Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/ p-SiOC:H ultralow- k dielectric integration

NASA Astrophysics Data System (ADS)

Jiao, Guohua; Liu, Bo; Li, Qiran

2015-08-01

Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/ p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/ p-SiOC:H/Si, even annealing up to 500 °C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/ p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 °C, indicating its potential application in the advanced barrierless Cu metallization.

Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

NASA Astrophysics Data System (ADS)

Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

2018-01-01

High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.

Study of thermal stability of spontaneously grown superlattice structures by metalorganic vapor phase epitaxy in AlxGa1-xAs/GaAs heterostructure

NASA Astrophysics Data System (ADS)

Pradhan, A.; Maitra, T.; Mukherjee, S.; Mukherjee, S.; Satpati, B.; Nayak, A.; Bhunia, S.

2018-04-01

Spontaneous superlattice ordering in a length scale larger than an atomic layer has been observed in AlxGa1-xAs layers grown on (100) GaAs substrates by metalorganic vapor phase epitaxy. Transmission electron microscopic image clearly revealed superlattice structures and the selected area electron diffraction showed closely spaced superlattice spots around the main diffraction pattern. High resolution x-ray diffraction showed distinct and sharp superlattice peaks symmetrically positioned around the central (004) Bragg peak and the similar measurement for (002) planes, which is quasi-forbidden for Bragg reflections showed only superlattice peaks. Thermal annealing studies showed the superlattice structure was stable up to 800 °C and disappeared after annealing at 900 °C retaining the crystallinity of the epilayer. Study of inter-diffusivitiesin such superlattice structures has been carried out using high temperaturex-ray diffraction results. Here we present (004) x-ray θ-2θ scans of the AlGaAs/GaAs (100) sample with annealing time for different temperatures. Conclusions regarding interdiffusion in such superlattice structures are drawn from high temperature X-ray measurements.

The deposition of aluminide and silicide coatings on γ-TiAl using the halide-activated pack cementation method

NASA Astrophysics Data System (ADS)

Munro, T. C.; Gleeson, B.

1996-12-01

The halide-activated pack cementation method (HAPC) was utilized to deposit aluminide and silicide coatings on nominally stoichiometric γ-TiAl. The deposition temperature was 1000°C and deposition times ranged from 2 to 12 hours. The growth rates of the coatings were diffusion controlled, with the rate of aluminide growth being about a factor of 2 greater than that of silicide growth. The aluminide coating was inward growing and consisted of a thick, uniform outer layer of TiAl3 and a thin inner layer of TiAl2, with the rate-controlling step being the diffusion of aluminum from the pack into the substrate. Annealing experiments at 1100 °C showed that the interdiffusion between the aluminide coating and the γ-TiAl substrate was rapid. In contrast to the aluminide coating, the silicide coating was nonuniform and porous, consisting primarily of TiSi2, TiSi, and Ti5Si4, with the rate-controlling step for the coating growth believed to be the diffusion of aluminum into the γ-TiAl ahead of the silicide/γ-TiAl interface. The microstructural evolution of the aluminide and silicide coating structures is discussed qualitatively.

Solution processable broadband transparent mixed metal oxide nanofilm optical coatings via substrate diffusion doping.

PubMed

Glynn, Colm; Aureau, Damien; Collins, Gillian; O'Hanlon, Sally; Etcheberry, Arnaud; O'Dwyer, Colm

2015-12-21

Devices composed of transparent materials, particularly those utilizing metal oxides, are of significant interest due to increased demand from industry for higher fidelity transparent thin film transistors, photovoltaics and a myriad of other optoelectronic devices and optics that require more cost-effective and simplified processing techniques for functional oxides and coatings. Here, we report a facile solution processed technique for the formation of a transparent thin film through an inter-diffusion process involving substrate dopant species at a range of low annealing temperatures compatible with processing conditions required by many state-of-the-art devices. The inter-diffusion process facilitates the movement of Si, Na and O species from the substrate into the as-deposited vanadium oxide thin film forming a composite fully transparent V0.0352O0.547Si0.4078Na0.01. Thin film X-ray diffraction and Raman scattering spectroscopy show the crystalline component of the structure to be α-NaVO3 within a glassy matrix. This optical coating exhibits high broadband transparency, exceeding 90-97% absolute transmission across the UV-to-NIR spectral range, while having low roughness and free of surface defects and pinholes. The production of transparent films for advanced optoelectronic devices, optical coatings, and low- or high-k oxides is important for planar or complex shaped optics or surfaces. It provides opportunities for doping metal oxides to ternary, quaternary or other mixed metal oxides on glass, encapsulants or other substrates that facilitate diffusional movement of dopant species.

Highly structured and surface modified poly(epsilon-caprolactone) scaffolds derived from co-continuous polymer blends for bone tissue engineering

NASA Astrophysics Data System (ADS)

Mehr, Nima Ghavidel

Chitosan, an important member of the polysaccharide family was used to alter the chemistry of PCL scaffolds and bring hydrophilicity to the surface. The deposition of a homogeneous chitosan layer on the surface of the PCL scaffolds was carried out using a Layer-by-Layer (LbL) selfassembly of poly(dialyldemethylammunium chloride) (PDADMAC) as cationic and poly(sodium 4-styrenesulfonate) (PSS) as anionic polyelectrolytes. The final negatively charged PSS layer allows for the addition of the positively charged chitosan as the outermost layer. Gravimetric measurements revealed that the addition of up to 3 layers leads to the formation of interdiffusing polyelectrolyte layers which do not allow for the formation of defined positive or negative charges. By increasing the number of polyelectrolyte layers with alternating charges, more welldefined layers are formed. Detailed analyses of O/C, N/C and S/C ratios by X-ray photoelectron spectroscopy (XPS) show that the PSS molecule dominates the surface as the last deposited polyelectrolyte layer at higher number of depositions (n=8), which can later be the surface for the deposition of chitosan. The LbL deposition of the chitosan layer on the LbL coating was then shown to be locally homogeneous at different depths within the scaffolds which also clarified that the LbL method is superior to the dip coating strategy. SEM analysis showed that there is a rough chitosan surface on the 2D solid PCL constructs whose thickness ranges from 550-700 nanometers. These results demonstrate that the application of LbL self-assembly of polyelectrolytes followed by the addition of chitosan as the outermost layer provides a route towards stable and homogeneous surface modification and has the potential to transform a classic fully interconnected porous synthetic polymer material to one with essentially complete chitosanlike surface characteristics. The osteogenic potential of PCL scaffolds with a chitosan coating using Layer-by-Layer (LbL) surface modification has never been evaluated before. This part of the study tests the hypothesis that in vitro osteogenesis can be achieved in 3D PCL scaffolds with fully interconnected pores of 84 im or 141 im average diameter and biomineralization can be enhanced when pore surfaces are coated with chitosan adsorbed to LbL deposited polyelectrolytes. In order to reduce the errors originating from cell infiltration inefficiencies, the most competent cell seeding protocol has to be defined. Among classical cell seeding at 37°C, 2-step seeding at 37°C and cold seeding at 4°C in a medium containing 2% FBS, the last strategy proved to yield the best population of freshly trypsinized hBMSCs at all depths of the 1mm-thick scaffolds. hBMSCs cold-seeded in PCL scaffolds with or without an LbL-chitosan coating were cultured for 10 days in proliferation medium, followed by 21 days in osteogenic medium. At day 2, MSCs formed sparse monolayers with rounded cell morphologies with thin filopodia anchored to the unmodified PCL, as compared to more spread cells on chitosan-coated pore surfaces. At day 10, cells proliferated as an external layer, and migrated onto secreted collagen networks that filled the interpore spaces of all scaffolds, but only adhered to chitosan-coated pore surfaces. At day 31, similar levels of tissue formed in scaffolds with and without chitosan, but more tissue was deposited in the outer pores than the inner pores. Furthermore, more biomineralized matrix was observed in the inner 84 im chitosan-coated pores (p<0.05). In the PCL-only samples, haphazard mineral deposits were observed in highly colonized outer layers and in the inner 141 im pores. MSCs cultured on chitosan-coated 2D control surfaces show higher alkaline phosphatase staining but negligible mineralization. This study showed that hBMSCs survive, proliferate, and attach to fibrotic matrix rather than the PCL-only scaffold pore surfaces. LbL-chitosan-coated scaffolds showed more biomineralization in 3D inner 84 im pores, a cell response that may be related to surface curvature in addition to improved surface hydrophilicity. (Abstract shortened by UMI.).

Tunable Crystallization and Nucleation of Planar CH3NH3PbI3 through Solvent-Modified Interdiffusion.

PubMed

Yao, Zhibo; Jones, Timothy W; Grigore, Mihaela; Duffy, Noel W; Anderson, Kenrick F; Dunbar, Ricky B; Feron, Krishna; Hao, Feng; Lin, Hong; Wilson, Gregory J

2018-05-02

A smooth and compact light absorption perovskite layer is a highly desirable prerequisite for efficient planar perovskite solar cells. However, the rapid reaction between CH 3 NH 3 I methylammonium iodide (MAI) and PbI 2 often leads to an inconsistent CH 3 NH 3 PbI 3 crystal nucleation and growth rate along the film depth during the two-step sequential deposition process. Herein, a facile solvent additive strategy is reported to retard the crystallization kinetics of perovskite formation and accelerate the MAI diffusion across the PbI 2 layer. It was found that the ultrasmooth perovskite thin film with narrow crystallite size variation can be achieved by introducing favorable solvent additives into the MAI solution. The effects of dimethylformamide, dimethyl sulfoxide, γ-butyrolactone, chlorobenzene, and diethyl ether additives on the morphological properties and cross-sectional crystallite size distribution were investigated using atomic force microscopy, X-ray diffraction, and scanning electron microscopy. Furthermore, the light absorption and band structure of the as-prepared CH 3 NH 3 PbI 3 films were investigated and correlated with the photovoltaic performance of the equivalent solar cell devices. Details of perovskite nucleation and crystal growth processes are presented, which opens new avenues for the fabrication of more efficient planar solar cell devices with these ultrasmooth perovskite layers.

Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure

NASA Astrophysics Data System (ADS)

Bashir, A.; Gallacher, K.; Millar, R. W.; Paul, D. J.; Ballabio, A.; Frigerio, J.; Isella, G.; Kriegner, D.; Ortolani, M.; Barthel, J.; MacLaren, I.

2018-01-01

A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm SiGe spacers, is analysed quantitatively using scanning transmission electron microscopy. Both high angle annular dark field imaging and electron energy loss spectroscopy show that the interfaces are not completely sharp, suggesting that there is some intermixing of Si and Ge at each interface. Two methods are compared for the quantification of the spectroscopy datasets: a self-consistent approach that calculates binary substitutional trends without requiring experimental or computational k-factors from elsewhere and a standards-based cross sectional calculation. Whilst the cross section approach is shown to be ultimately more reliable, the self-consistent approach provides surprisingly good results. It is found that the Ge quantum wells are actually about 95% Ge and that the spacers, whilst apparently peaking at about 35% Si, contain significant interdiffused Ge at each side. This result is shown to be not just an artefact of electron beam spreading in the sample, but mostly arising from a real chemical interdiffusion resulting from the growth. Similar results are found by use of X-ray diffraction from a similar area of the sample. Putting the results together suggests a real interdiffusion with a standard deviation of about 0.87 nm, or put another way—a true width defined from 10%-90% of the compositional gradient of about 2.9 nm. This suggests an intrinsic limit on how sharp such interfaces can be grown by this method and, whilst 95% Ge quantum wells (QWs) still behave well enough to have good properties, any attempt to grow thinner QWs would require modifications to the growth procedure to reduce this interdiffusion, in order to maintain a composition of ≥95% Ge.

Epitaxial growth of VO2 by periodic annealing

NASA Astrophysics Data System (ADS)

Tashman, J. W.; Lee, J. H.; Paik, H.; Moyer, J. A.; Misra, R.; Mundy, J. A.; Spila, T.; Merz, T. A.; Schubert, J.; Muller, D. A.; Schiffer, P.; Schlom, D. G.

2014-02-01

We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

Surface Morphology of Liquid and Solid Thin Films via X-Ray Reflectivity.

NASA Astrophysics Data System (ADS)

Shindler, Joseph Daniel

X-ray reflectivity can be used to measure the spatial variations in the electron density on length scales from Angstroms to microns. It is sensitive to atomic scale roughness, interdiffusion in buried layers, the thickness of multilayer stacks, and in-plane correlations in each of these cases. We have pioneered the use of a high intensity, moderate resolution configuration for x-ray reflectivity which utilizes a bent crystal graphite monochromator. With this technique we can obtain a beam intensity one hundred times greater than is possible using the high resolution rotating anode configuration, while we have shown that the resulting instrumental resolution is appropriate for the vast majority of thin film work. For all of the systems studied, we were able to measure the weak diffuse scattering signal to probe the in-plane length scales of interfacial roughness, a measurement which had previously only been attempted at synchrotron sources. Studied systems include thin films and surfaces with a wide range of structural order and surface morphologies. Interest in liquid films has been of a fundamental nature. Theories on the expected film evolution with changing thickness and temperature are currently being tested with scattering experiments. We have pursued the issues of film/substrate wetting and conformality, focussing on the temperature dependence of these phenomena near the triple point. Despite the heterogeneity of the substrate potential, we see a very sharp wetting transition at or near the triple point, although below the triple point the film is still smooth, consistent with a uniform layer. We also see a loss of conformality as the fluid films thicken; this is consistent with theory and with other recent experiments. The properties of a multilayer solid film depend not only on the magnitude of the roughness of each interface, but also on the conformality between interfaces and the length scales of the roughness--i.e., whether the roughness is on the atomic lengths of interdiffusion, crystalline order lengths of faceting, or even longer lengths due to other processes. In a joint project with Alcoa, we combined the methods of x-ray Bragg diffraction and small angle reflectivity to probe aluminum thin films as precursors to true multilayer films, correlating grain size and orientation with the magnitude and length-scales of surface roughness. We also correlated all film properties with such parameters as the deposition method, substrate roughness, and film thickness.

Influence of compositional complexity on interdiffusion in Ni-containing concentrated solid-solution alloys

DOE PAGES

Jin, Ke; Zhang, Chuan; Zhang, Fan; ...

2018-03-07

To investigate the compositional effects on thermal-diffusion kinetics in concentrated solid-solution alloys, interdiffusion in seven diffusion couples with alloys from binary to quinary is systematically studied. The alloys with higher compositional complexity exhibit in general lower diffusion coefficients against homologous temperature, however, an exception is found that diffusion in NiCoFeCrPd is faster than in NiCoFeCr and NiCoCr. While the derived diffusion parameters suggest that diffusion in medium and high entropy alloys is overall more retarded than in pure metals and binary alloys, they strongly depend on specific constituents. The comparative features are captured by computational thermodynamics approaches using a self-consistentmore » database.« less

Reaction diffusion in the nickel-chromium-aluminum and cobalt-chromium-aluminum systems

NASA Technical Reports Server (NTRS)

Levine, S. R.

1977-01-01

The effects of MCrAl coating-substrate interdiffusion on oxidation life and the general mutliphase, multicomponent diffusion problem were examined. Semi-infinite diffusion couples that had sources representing coatings and sinks representing gas turbine alloys were annealed at 1,000, 1,095, 1,150, or 1,205 C for as long as 500 hours. The source and sink aluminum and chromium contents and the base metal (cobalt or nickel) determined the parabolic diffusion rate constants of the couples and predicted finite coating lives. The beta source strength concept provided a method (1) for correlating beta recession rate constants with composition; (2) for determining reliable average total, diffusion, and constitutional activation energies; and (3) for calculating interdiffusion coefficients.

Electron microscopy of AlN-SiC interfaces and solid solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bentley, J.; Tanaka, S.; Davis, R.F.

In a 2H AlN-SiC solid solution grown by MBE on {alpha}(6H)-SiC (3{degrees} from [0001]), the epilayer contained a high density of basal faults related to {approximately}5 nm steps on the growth surface: no compositional inhomogeneity was detected by PEELS. In diffusion couples of polycrystalline, sintered AlN on SiC annealed at 1600 and 1700{degrees}C. 8H sialon [nominally (AlN){sub 2}Al{sub 2}O{sub 3}] formed at the interface of SiC and recrystallized epitactic AlN grains, and Si{sub 3}N{sub 4}-rich {beta}{prime} sialon particles formed in the SiC. No interdiffusion was detected by PEELS in diffusion couples of MBE-grown AlN on SiC annealed at 1700 andmore » 1850{degrees}C. Irregular epilayer thickness explains companion Auger depth profile results.« less

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

NASA Astrophysics Data System (ADS)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

Clinical status of ten dentin adhesive systems.

PubMed

Van Meerbeek, B; Peumans, M; Verschueren, M; Gladys, S; Braem, M; Lambrechts, P; Vanherle, G

1994-11-01

Laboratory testing of dentin adhesive systems still requires corroboration by long-term clinical trials for their ultimate clinical effectiveness to be validated. The objective of this clinical investigation was to evaluate, retrospectively, the clinical effectiveness of earlier-investigated dentin adhesive systems (Scotchbond, Gluma, Clearfil New Bond, Scotchbond 2, Tenure, and Tripton), and to compare their clinical results with those obtained with four modern total-etch adhesive systems (Bayer exp. 1 and 2, Clearfil Liner Bond System, and Scotchbond Multi-Purpose). In total, 1177 Class V cervical lesions in the teeth of 346 patients were restored following two cavity designs: In Group A, enamel was neither beveled nor intentionally etched, as per ADA guidelines; in Group B, adjacent enamel was beveled and conditioned. Clinical retention rates definitely indicated the improved clinical efficacy of the newest dentin adhesives over the earlier systems. With regard to adhesion strategy, adhesive systems that removed the smear layer and concurrently demineralized the dentin surface layer performed clinically better than systems that modified the disorderly layer of smear debris without complete removal. Hybridization by resin interdiffusion into the exposed dentinal collagen layer, combined with attachment of resin tags into the opened dentin tubules, appeared to be essential for reliable dentin bonding but might be insufficient by itself. The additional formation of an elastic bonding area as a polymerization shrinkage absorber and the use of a microfine restorative composite apparently guaranteed an efficient clinical result. The perfect one-year retention recorded for Clearfil Liner Bond System and Scotchbond Multi-Purpose must be confirmed at later recalls.

Rheology at the Interface and the Role of the Interphase in Reactive Functionalized Multilayer Polymers in Coextrusion Process

NASA Astrophysics Data System (ADS)

Lamnawar, Khalid; Maazouz, Abderrahim

2008-07-01

Coextrusion technologies are commonly used to produce multilayered composite sheets or films for a large range of applications from food packaging to optics. The contrast of rheological properties between layers can lead to interfacial instabilities during flow. Important theoretical and experimental advances regarding the stability of compatible and incompatible polymers have, during the last decades, been made using a mechanical approach. However, few research efforts have been dedicated to the physicochemical affinity between the neighboring layers. The present study deals with the influence of this affinity on interfacial instabilities for functionalized incompatible polymers. Polyamide (PA6)/polyethylene grafted with glycidyl methacrylate (PE-GMA) was used as a reactive system and PE/PA6 as a non reactive one. Two grades of polyamide (PA6) were used in order to change the viscosity and elasticity ratios between PE (or PE-GMA) and PA6. It was experimentally confirmed, in this case, that weak disturbance can be predicted by considering an interphase of non-zero thickness (corresponding to an interdiffusion/reaction zone) instead of a purely geometrical interface between the two reactive layers. According to the rheological investigations from previous work which the interphase effect can be probed, an experimental strategy was here formulated to optimize the process by listing the parameters that controlled the stability of the reactive multilayer flows. Hence, based on this analysis, guidelines for a stable coextrusion of reactive functionalized polymers can be provided coupling the classical parameters (viscosity, elasticity and layer ratios) and the physicochemical affinity at the polymer/polymer interface.

Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag/Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} current-perpendicular-to-plane pseudo spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, J. W.; Sakuraba, Y., E-mail: Sakuraba.Yuya@nims.go.jp; Sasaki, T. T.

2016-03-07

We have investigated the effects of insertion of a thin NiAl layer (≤0.63 nm) into a Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin valves (PSVs). First-principles calculations of ballistic transmittance clarified that the interfacial band matching at the (001)-oriented NiAl/CFGG interface is better than that at the (001)-Ag/CFGG interface. The insertion of 0.21-nm-thick NiAl layers at the Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag interfaces effectively improved the magnetoresistance (MR) output; the observed average and the highest MR ratio (ΔRA) are 62% (25 mΩ μm{sup 2}) and 77% (31 mΩ μm{sup 2}) atmore » room temperature, respectively, which are much higher than those without NiAl insertion. Microstructural analysis using scanning transmission electron microscopy confirmed the existence of thin NiAl layers at the Ag interfaces with only modest interdiffusion even after annealing at 550 °C. The improvement of the interfacial spin-dependent scattering by very thin NiAl insertion can be a predominant reason for the enhancement of the MR output.« less

Interdiffusion, Intrinsic Diffusion, Atomic Mobility, and Vacancy Wind Effect in γ(bcc) Uranium-Molybdenum Alloy

NASA Astrophysics Data System (ADS)

Huang, Ke; Keiser, Dennis D.; Sohn, Yongho

2013-02-01

U-Mo alloys are being developed as low enrichment uranium fuels under the Reduced Enrichment for Research and Test Reactor (RERTR) Program. In order to understand the fundamental diffusion behavior of this system, solid-to-solid pure U vs Mo diffusion couples were assembled and annealed at 923 K, 973 K, 1073 K, 1173 K, and 1273 K (650 °C, 700 °C, 800 °C, 900 °C, and 1000 °C) for various times. The interdiffusion microstructures and concentration profiles were examined via scanning electron microscopy and electron probe microanalysis, respectively. As the Mo concentration increased from 2 to 26 at. pct, the interdiffusion coefficient decreased, while the activation energy increased. A Kirkendall marker plane was clearly identified in each diffusion couple and utilized to determine intrinsic diffusion coefficients. Uranium intrinsically diffused 5-10 times faster than Mo. Molar excess Gibbs free energy of U-Mo alloy was applied to calculate the thermodynamic factor using ideal, regular, and subregular solution models. Based on the intrinsic diffusion coefficients and thermodynamic factors, Manning's formalism was used to calculate the tracer diffusion coefficients, atomic mobilities, and vacancy wind parameters of U and Mo at the marker composition. The tracer diffusion coefficients and atomic mobilities of U were about five times larger than those of Mo, and the vacancy wind effect increased the intrinsic flux of U by approximately 30 pct.

The effect of silicon on the oxidation behavior of NiAlHf coating system

NASA Astrophysics Data System (ADS)

Dai, Pengchao; Wu, Qiong; Ma, Yue; Li, Shusuo; Gong, Shengkai

2013-04-01

Two types of NiAlHf coatings doped with different content of Si (1 at.% and 2 at.%) were deposited on a Ni3Al based single crystal superalloy IC32 by electron beam physical vapor deposition (EB-PVD) method, respectively. For comparison, NiAlHf coating with 0 at.% Si was also prepared. The oxidation tests were carried out at 1423 K in air. At the initial stage of oxidation, large amount of flake-like θ-Al2O3 was found on NiAlHf coating surface. However, no θ-Al2O3 was observed in 2 at.% Si doped NiAlHf coating except α-Al2O3. It revealed that the Si additions could contribute to the transformation from θ-Al2O3 to α-Al2O3. When oxidation time prolonged to 100 h, it was found that the degradation of NiAlHf coating was very severe with no residual β-phase, which was due to the serious inter-diffusion between the coating and substrate. In contrast, the inter-diffusion in Si-doped coating was reduced with some residual β-phase and R-Ni(Mo, Re) precipitates. The presence of Si could retard the inter-diffusion of elements between coating and substrate, indicating a barrier diffusion effect. As a result, the oxidation resistance of NiAlHf coating was improved significantly.

Effects of Laser Power Level on Microstructural Properties and Phase Composition of Laser-Clad Fluorapatite/Zirconia Composite Coatings on Ti6Al4V Substrates

PubMed Central

Chien, Chi-Sheng; Liu, Cheng-Wei; Kuo, Tsung-Yuan

2016-01-01

Hydroxyapatite (HA) is one of the most commonly used materials for the coating of bioceramic titanium (Ti) alloys. However, HA has poor mechanical properties and a low bonding strength. Accordingly, the present study replaces HA with a composite coating material consisting of fluorapatite (FA) and 20 wt % yttria (3 mol %) stabilized zirconia (ZrO2, 3Y-TZP). The FA/ZrO2 coatings are deposited on Ti6Al4V substrates using a Nd:YAG laser cladding system with laser powers and travel speeds of 400 W/200 mm/min, 800 W/400 mm/min, and 1200 W/600 mm/min, respectively. The experimental results show that a significant inter-diffusion of the alloying elements occurs between the coating layer (CL) and the transition layer (TL). Consequently, a strong metallurgical bond is formed between them. During the cladding process, the ZrO2 is completely decomposed, while the FA is partially decomposed. As a result, the CLs of all the specimens consist mainly of FA, Ca4(PO4)2O (TTCP), CaF2, CaZrO3, CaTiO3 and monoclinic phase ZrO2 (m-ZrO2), together with a small amount of θ-Al2O3. As the laser power is increased, CaO, CaCO3 and trace amounts of tetragonal phase ZrO2 (t-ZrO2) also appear. As the laser power increases from 400 to 800 W, the CL hardness also increases as a result of microstructural refinement and densification. However, at the highest laser power of 1200 W, the CL hardness reduces significantly due to the formation of large amounts of relatively soft CaO and CaCO3 phase. PMID:28773503

Interdiffusion effect on strained La0.8Ba0.2MnO3 thin films by off-axis sputtering on SrTiO3 (100) substrates

NASA Astrophysics Data System (ADS)

Chou, Hsiung; Hsu, S. G.; Lin, C. B.; Wu, C. B.

2007-02-01

Strained La0.8Ba0.2MnO3 thin films on SrTiO3 (100) substrate are grown by an off-axis sputtering technique. It is found that the ferromagnetic temperature TC increases for thinner films. Secondary ion mass spectroscopy indicates that Sr diffuses partially into the film, making it structurally nonuniform. The region close to the film/substrate interface acts as La1-x(SryBa1-y)xMnO3 with a near negligible y for the as grown film and a non-negligible amount of y for the high-temperature postannealed film. The enhancement of TC is attributed to the combination of the strain and interdiffusion effects.

Study of surfactant mediated growth of Ni/V superlattices

NASA Astrophysics Data System (ADS)

Amir, S. M.; Gupta, Mukul; Potdar, Satish; Gupta, Ajay; Stahn, Jochen

2013-07-01

The Ni/V multilayers are useful as soft x-ray mirrors, polarizers, and phase retarders. For these applications, it is necessary that the interfaces roughness and interdiffusion must be as small as possible. The V-on-Ni and Ni-on-V interfaces are asymmetric due to the difference in the surface free energy of Ni and V. In this work, we report Ag surfactant mediated growth of Ni/V superlattices prepared using ion beam sputter deposition technique. These superlattices were studied using x-ray and neutron scattering techniques. It was found that when added in an optimum amount, Ag surfactant results in reduced interface roughness and interdiffusion across the interfaces. Obtained results can be understood with the surfactant floating-off mechanism leading to a balance in the surface free energy of Ni and V.

Polarized neutron reflectivity study of perpendicular magnetic anisotropy in MgO/CoFeB/W thin films

NASA Astrophysics Data System (ADS)

Ambaye, Haile; Zhan, Xiao; Li, Shufa; Lauter, Valeria; Zhu, Tao

In this work we study the origin of PMA in MgO/CoFeB/W trilayer systems using polarized neutron reflectivity. Recently, the spin Hall effect in the heavy metals, such as Pt and Ta, has been of significant interest for highly efficient magnetization switching of the ultrathin ferromagnets sandwiched by such a heavy metal and an oxide, which can be used for spintronic based memory and logic devices. Most work has focused on heavy-metal/ferromagnet/oxide trilayer (HM/FM/MO) structures with perpendicular magnetic anisotropy (PMA), where the oxide layer plays the role of breaking inversion symmetry .No PMA was found in W/CoFeB/MgO films. An insertion of Hf layer in between the W and CoFeB layers, however, has been found to create a strong PMA. Roughness and formation of interface alloys by interdiffusion influences the extent of PMA. We intend to identify these influences using the depth sensitive technique of PNR. In our previous study, we have successfully performed polarized neutron reflectometry (PNR) measurements on the Ta/CoFeB/MgO/CoFeB/Ta thin film with MgO thickness of 1 nm. The PNR measurements were carried out using the BL-4A Magnetic Reflectometer at SNS. This work has been supported by National Basic Research Program of China (2012CB933102). Research at SNS was supported by the Office of BES, DOE.

Interdiffusion and Intrinsic Diffusion in the Mg-Al System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brennan, Sarah; Bermudez, Katrina; Sohn, Yong Ho

2012-01-01

Solid-to-solid diffusion couples were assembled and annealed to examine the diffusion between pure Mg (99.96%) and Al (99.999%). Diffusion anneals were carried out at 300 , 350 , and 400 C for 720, 360, and 240 hours, respectively. Optical and scanning electron microscopes were utilized to identify the formation of the intermetallic phases, -Al12Mg17 and -Al3Mg2 and absence of the -phase in the diffusion couples. Thicknesses of the -Al12Mg17 and -Al3Mg2 phases were measured and the parabolic growth constants were calculated to determine the activation energies for the growth, 165 and 86 KJ/mole, respectively. Concentration profiles were determined with electronmore » microprobe analysis using pure elemental standards. Composition-dependent interdiffusion coefficients in Mg-solid solution, -Al12Mg17 and - Al3Mg2 and Al-solid solutions were calculated based on the Boltzmann-Matano analysis. Average effective interdiffusion coefficients for each phase were also calculated, and the magnitude was the highest for the -Al3Mg2 phase, followed by -Al12Mg17, Al-solid solution and Mg-solid solution. Intrinsic diffusion coefficients based on Huemann s analysis (e.g., marker plane) were determined for the ~38 at.% Mg in the -Al3Mg2 phase. Activation energies and the pre-exponential factors for the inter- and intrinsic diffusion coefficients were calculated for the temperature range examined. The -Al3Mg2 phase was found to have the lowest activation energies for growth and interdiffusion among all four phases studied. At the marker location in the -Al3Mg2 phase, the intrinsic diffusion of Al was found to be faster than that of Mg. Extrapolations of the impurity diffusion coefficients in the terminal solid solutions were made and compared to the available self- and impurity diffusion data from literature. Thermodynamic factor, tracer diffusion coefficients and atomic mobilities at the marker plane composition were approximated using available literature values of Mg activity in the -Al3Mg2 phase.« less

Survey of selective solar absorbers and their limitations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mattox, D.M.; Sowell, R.R.

1980-01-01

A number of selective absorber coating systems with high solar absorptance exist which may be used in the mid-temperature range. Some of the systems are more chemically and thermally stable than others. Unfortunately, there are large gaps in the stability data for a large number of the systems. In an inert environment, the principle degradation mechanisms are interdiffusion between the layers or phases and changes in surface morphology. These degradation mechanisms would be minimized by using refractory metals and compounds for the absorbing layer and using refractory materials or diffusion barriers for the underlayer. For use in a reactive environment,more » the choice of materials is much more restrictive since internal chemical reactions can change phase compositions and interfacial reactions can lead to loss of adhesion. For a coating process to be useful, it is necessary to determine what parameters influence the performance of the coating and the limits to these parameters. This process sensitivity has a direct influence on the production process controls necessary to produce a good product. Experience with electroplated black chrome has been rather disappointing. Electroplating should be a low cost deposition process but the extensive bath analysis and optical monitoring necessary to produce a thermally stable produce for use to 320/sup 0/C has increased cost signficantly. 49 references.« less

Strain induced atomic structure at the Ir-doped LaAlO3/SrTiO3 interface.

PubMed

Lee, M; Arras, R; Warot-Fonrose, B; Hungria, T; Lippmaa, M; Daimon, H; Casanove, M J

2017-11-01

The structure of Ir-doped LaAlO 3 /SrTiO 3 (001) interfaces was investigated on the atomic scale using probe-corrected transmission electron microscopy in high-angle annular dark-field scanning mode (HAADF-STEM) and electron energy loss spectroscopy (EELS), combined with first-principles calculations. We report the evolution of the strain state experimentally measured in a 5 unit-cell thick LaAlO 3 film as a function of the Ir concentration in the topmost SrTiO 3 layer. It is shown that the LaAlO 3 layers remain fully elastically strained up to 3% of Ir doping, whereas a higher doping level seems to promote strain relaxation through enhanced cationic interdiffusion. The observed differences between the energy loss near edge structure (ELNES) of Ti-L 2,3 and O-K edges at non-doped and Ir-doped interfaces are consistent with the location of the Ir dopants at the interface, up to 3% of Ir doping. These findings, supported by the results of density functional theory (DFT) calculations, provide strong evidence that the effect of dopant concentrations on the properties of this kind of interface should not be analyzed without obtaining essential information from the fine structural and chemical analysis of the grown structures.

Magnetic properties influenced by interfaces in ultrathin Co/Ge(1 0 0) and Co/Ge(1 1 1) films

NASA Astrophysics Data System (ADS)

Tsay, J. S.; Yao, Y. D.; Cheng, W. C.; Tseng, T. K.; Wang, K. C.; Yang, C. S.

2003-10-01

Magnetic properties influenced by interfaces in ultrathin Co/Ge(1 0 0) and Co/Ge(1 1 1) films with thickness below 28 monolayers (ML) have been studied using the surface magneto-optic Kerr effect (SMOKE) technique. In both systems, the nonferromagnetic layer, as an interface between Co and Ge, plays an important role during annealing. In general, ultrathin Co films with fixed total thickness but fabricated at different temperatures on the same substrate, their Kerr hysteresis loops disappear roughly at the same temperature. This suggests that the thickness of the interfacial layer could inversely prevent the diffusion between Co and Ge substrate. From the annealing studies for both systems with total film thickness of 28 monolayers, we have found that Kerr signal disappears at 375 K for Co/Ge(1 1 1) and 425 K for Co/Ge(1 0 0) films. This suggests that Co/Ge(1 1 1) films possess a lower thermal stability than that of the Co/Ge(1 0 0) films. Our experimental data could be explained by different interfacial condition between Ge(1 0 0) and Ge(1 1 1), the different onset of interdiffusion, and the surface structure condition of Ge(1 0 0) and Ge(1 1 1).

Interdiffusion in U 3Si-Al, U 3Si 2-Al, and USi-Al dispersion fuels during irradiation

NASA Astrophysics Data System (ADS)

Kim, Yeon Soo; Hofman, Gerard L.

2011-03-01

Uranium-silicide compound fuel dispersion in an Al matrix is used in research and test reactors worldwide. Interaction layer (IL) growth between fuel particles and the matrix is one of performance issues. The interaction layer growth data for U 3Si, U 3Si 2 and USi dispersions in Al were obtained from both out-of-pile and in-pile tests. The IL is dominantly U(AlSi) 3 from out-of-pile tests, but its (Al + Si)/U ratio from in-pile tests is higher than the out-of-pile data, because of amorphous behavior of the ILs. IL growth correlations were developed for U 3Si-Al and U 3Si 2-Al. The IL growth rates were dependent on the U/Si ratio of the fuel compounds. During irradiation, however, the IL growth rates did not decrease with the decreasing U/Si ratio by fission. It is reasoned that transition metal fission products in the IL compensate the loss of U atoms by providing chemical potential for Al diffusion and volume expansion by solid swelling and gas bubble swelling. The addition of Mo in U 3Si 2 reduces the IL growth rate, which is similar to that of UMo alloy dispersion in a silicon-added Al matrix.

Experimental Determination of Impurity and Interdiffusion Coefficients in Seven Ti and Zr Binary Systems Using Diffusion Multiples

NASA Astrophysics Data System (ADS)

Chen, Zhangqi; Liu, Zi-Kui; Zhao, Ji-Cheng

2018-05-01

Diffusion coefficients of seven binary systems (Ti-Mo, Ti-Nb, Ti-Ta, Ti-Zr, Zr-Mo, Zr-Nb, and Zr-Ta) at 1200 °C, 1000 °C, and 800 °C were experimentally determined using three Ti-Mo-Nb-Ta-Zr diffusion multiples. Electron probe microanalysis (EPMA) was performed to collect concentration profiles at the binary diffusion regions. Forward simulation analysis (FSA) was then applied to extract both impurity and interdiffusion coefficients in Ti-rich and Zr-rich part of the bcc phase. Excellent agreements between our results and most of the literature data validate the high-throughput approach combining FSA with diffusion multiples to obtain a large amount of systematic diffusion data, which will help establish the diffusion (mobility) databases for the design and development of biomedical and structural Ti alloys.

Experimental Determination of Impurity and Interdiffusion Coefficients in Seven Ti and Zr Binary Systems Using Diffusion Multiples

NASA Astrophysics Data System (ADS)

Chen, Zhangqi; Liu, Zi-Kui; Zhao, Ji-Cheng

2018-07-01

Diffusion coefficients of seven binary systems (Ti-Mo, Ti-Nb, Ti-Ta, Ti-Zr, Zr-Mo, Zr-Nb, and Zr-Ta) at 1200 °C, 1000 °C, and 800 °C were experimentally determined using three Ti-Mo-Nb-Ta-Zr diffusion multiples. Electron probe microanalysis (EPMA) was performed to collect concentration profiles at the binary diffusion regions. Forward simulation analysis (FSA) was then applied to extract both impurity and interdiffusion coefficients in Ti-rich and Zr-rich part of the bcc phase. Excellent agreements between our results and most of the literature data validate the high-throughput approach combining FSA with diffusion multiples to obtain a large amount of systematic diffusion data, which will help establish the diffusion (mobility) databases for the design and development of biomedical and structural Ti alloys.

Characterization of low temperature Cu/In bonding for fine-pitch interconnects in three-dimensional integration

NASA Astrophysics Data System (ADS)

Panchenko, Iuliana; Bickel, Steffen; Meyer, Jörg; Mueller, Maik; Wolf, Jürgen M.

2018-02-01

This study presents the results for Cu/In bonding based on the solid-liquid interdiffusion (SLID) principle for fine-pitch interconnects in three-dimensional integration. The microbumps were fabricated on Si wafers (55 µm pitch, 25 µm top bump diameter, 35 µm bottom bump diameter). In was electroplated directly on Cu only on the top die microbumps. Two different In thicknesses were manufactured (3 and 5 µm). The interconnects were successfully fabricated at a bonding temperature of 170 °C. High temperature storage was carried out at 150 and 200 °C for different times between 2 and 72 h directly after the interconnect formation in order to investigate the temperature stability. The microstructure was analyzed by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The intermetallic compound (IMC) found in the microbumps after electroplating was CuIn2. The intermetallic interlayer consists of Cu11In9 and a thin layer of Cu2In after bonding and isothermal storage.

Surface faceting and elemental diffusion behaviour at atomic scale for alloy nanoparticles during in situ annealing

PubMed Central

Chi, Miaofang; Wang, Chao; Lei, Yinkai; Wang, Guofeng; Li, Dongguo; More, Karren L.; Lupini, Andrew; Allard, Lawrence F.; Markovic, Nenad M.; Stamenkovic, Vojislav R.

2015-01-01

The catalytic performance of nanoparticles is primarily determined by the precise nature of the surface and near-surface atomic configurations, which can be tailored by post-synthesis annealing effectively and straightforwardly. Understanding the complete dynamic response of surface structure and chemistry to thermal treatments at the atomic scale is imperative for the rational design of catalyst nanoparticles. Here, by tracking the same individual Pt3Co nanoparticles during in situ annealing in a scanning transmission electron microscope, we directly discern five distinct stages of surface elemental rearrangements in Pt3Co nanoparticles at the atomic scale: initial random (alloy) elemental distribution; surface platinum-skin-layer formation; nucleation of structurally ordered domains; ordered framework development and, finally, initiation of amorphization. Furthermore, a comprehensive interplay among phase evolution, surface faceting and elemental inter-diffusion is revealed, and supported by atomistic simulations. This work may pave the way towards designing catalysts through post-synthesis annealing for optimized catalytic performance. PMID:26576477

Surface faceting and elemental diffusion behaviour at atomic scale for alloy nanoparticles during in situ annealing

DOE PAGES

Chi, Miaofang; Wang, Chao; Lei, Yinkai; ...

2015-11-18

The catalytic performance of nanoparticles is primarily determined by the precise nature of the surface and near-surface atomic configurations, which can be tailored by post-synthesis annealing effectively and straightforwardly. Understanding the complete dynamic response of surface structure and chemistry to thermal treatments at the atomic scale is imperative for the rational design of catalyst nanoparticles. Here, by tracking the same individual Pt 3Co nanoparticles during in situ annealing in a scanning transmission electron microscope, we directly discern five distinct stages of surface elemental rearrangements in Pt 3Co nanoparticles at the atomic scale: initial random (alloy) elemental distribution; surface platinum-skin-layer formation;more » nucleation of structurally ordered domains; ordered framework development and, finally, initiation of amorphization. Furthermore, a comprehensive interplay among phase evolution, surface faceting and elemental inter-diffusion is revealed, and supported by atomistic simulations. In conlcusion, this work may pave the way towards designing catalysts through post-synthesis annealing for optimized catalytic performance.« less

Auger electron diffraction study of V/Fe(100) interface formation

NASA Astrophysics Data System (ADS)

Huttel, Y.; Avila, J.; Asensio, M. C.; Bencok, P.; Richter, C.; Ilakovac, V.; Heckmann, O.; Hricovini, K.

1998-05-01

Vanadium atoms present a magnetic moment different to zero when they are part of a thin film deposited on Fe or as a bimetallic Fe-V alloy. The understanding of this phenomenon can only be achieved with a correct structural description of these types of systems. We report an Auger electron diffraction investigation of V films grown on body cubic centred (b.c.c.) Fe(100) substrates. Angular-scanned Auger electron diffraction (AED) patterns of V L 23M 23M 4 (473 eV) and Fe L 3VV (703 eV) show the formation of a well-ordered V/Fe interface even at room temperature. The AED patterns of V films in the range of vanadium submonolayer provide evidence of an isotropic Auger emission, indicating the absence of interdiffusion of V atoms into the Fe substrate and absence of cluster growth of the V film. The annealing of these films up to 400°C does not activate the substitution of the topmost Fe surface layers by V atoms.

Homoepitaxial graphene tunnel barriers for spin transport

NASA Astrophysics Data System (ADS)

Friedman, Adam

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. We demonstrate successful tunneling, charge, and spin transport with a fluorinated graphene tunnel barrier on a graphene channel. We show that while spin transport stops short of room temperature, spin polarization efficiency values are the highest of any graphene spin devices. We also demonstrate that hydrogenation of graphene can also be used to create a tunnel barrier. We begin with a four-layer stack of graphene and hydrogenate the top few layers to decouple them from the graphene transport channel beneath. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies. The measured spin polarization efficiencies for hydrogenated graphene are higher than most oxide tunnel barriers on graphene, but not as high as with fluorinated graphene tunnel barriers. However, here we show that spin transport persists up to room temperature. Our results for the hydrogenated graphene tunnel barriers are compared with fluorinated tunnel barriers and we discuss the possibility that magnetic moments in the graphene tunnel barriers affect the spin transport of our devices.

Controlling the surface‐mediated release of DNA using ‘mixed multilayers’

PubMed Central

Appadoo, Visham; Carter, Matthew C. D.

2016-01-01

Abstract We report the design of erodible ‘mixed multilayer’ coatings fabricated using plasmid DNA and combinations of both hydrolytically degradable and charge‐shifting cationic polymer building blocks. Films fabricated layer‐by‐layer using combinations of a model poly(β‐amino ester) (polymer 1) and a model charge‐shifting polymer (polymer 2) exhibited DNA release profiles that were substantially different than those assembled using DNA and either polymer 1 or polymer 2 alone. In addition, the order in which layers of these two cationic polymers were deposited during assembly had a profound impact on DNA release profiles when these materials were incubated in physiological buffer. Mixed multilayers ∼225 nm thick fabricated by depositing layers of polymer 1/DNA onto films composed of polymer 2/DNA released DNA into solution over ∼60 days, with multi‐phase release profiles intermediate to and exhibiting some general features of polymer 1/DNA or polymer 2/DNA films (e.g., a period of rapid release, followed by a more extended phase). In sharp contrast, ‘inverted’ mixed multilayers fabricated by depositing layers of polymer 2/DNA onto films composed of polymer 1/DNA exhibited release profiles that were almost completely linear over ∼60‐80 days. These and other results are consistent with substantial interdiffusion and commingling (or mixing) among the individual components of these compound materials. Our results reveal this mixing to lead to new, unanticipated, and useful release profiles and provide guidance for the design of polymer‐based coatings for the local, surface‐mediated delivery of DNA from the surfaces of topologically complex interventional devices, such as intravascular stents, with predictable long‐term release profiles. PMID:27981243

Interplay between out-of-plane anisotropic L1{sub 1}-type CoPt and in-plane anisotropic NiFe layers in CoPt/NiFe exchange springs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saravanan, P.; Defence Metallurgical Research Laboratory, Hyderabad 500058; Hsu, Jen-Hwa, E-mail: jhhsu@phys.ntu.edu.tw

2014-06-28

Films of L1{sub 1}-type CoPt/NiFe exchange springs were grown with different NiFe (Permalloy) layer thickness (t{sub NiFe} = 0–10 nm). X-ray diffraction analysis reveals that the characteristic peak position of NiFe(111) is not affected by the CoPt-layer—confirming the absence of any inter-diffusion between the CoPt and NiFe layers. Magnetic studies indicate that the magnetization orientation of NiFe layer can be tuned through varying t{sub NiFe} and the perpendicular magnetic anisotropy of L1{sub 1}-type CoPt/NiFe films cannot sustain for t{sub NiFe} larger than 3.0 nm due to the existence of exchange interaction at the interface of L1{sub 1}-CoPt and NiFe layers. Magnetic force microscopy analysismore » on the as-grown samples shows the changes in morphology from maze-like domains with good contrast to hazy domains when t{sub NiFe} ≥ 3.0 nm. The three-dimensional micro-magnetic simulation results demonstrate that the magnetization orientation in NiFe layer is not uniform, which continuously increases from the interface to the top of NiFe layer. Furthermore, the tilt angle of the topmost NiFe layers can be changed over a very wide range from a small number to about 75° by varying t{sub NiFe} from 1 to 10 nm. It is worth noting that there is an abrupt change in the magnetization direction at the interface, for all the t{sub NiFe} investigated. The results of present study demonstrate that the tunable tilted exchange springs can be realized with L1{sub 1}-type CoPt/NiFe bilayers for future applications in three-axis magnetic sensors or advanced spintronic devices demanding inclined magnetic anisotropy.« less

Diffusion of Sites versus Polymers in Polyelectrolyte Complexes and Multilayers.

PubMed

Fares, Hadi M; Schlenoff, Joseph B

2017-10-18

It has long been assumed that the spontaneous formation of materials such as complexes and multilayers from charged polymers depends on (inter)diffusion of these polyelectrolytes. Here, we separately examine the mass transport of polymer molecules and extrinsic sites-charged polyelectrolyte repeat units balanced by counterions-within thin films of polyelectrolyte complex, PEC, using sensitive isotopic labeling techniques. The apparent diffusion coefficients of these sites within PEC films of poly(diallyldimethylammonium), PDADMA, and poly(styrenesulfonate), PSS, are at least 2 orders of magnitude faster than the diffusion of polyelectrolytes themselves. This is because site diffusion requires only local rearrangements of polyelectrolyte repeat units, placing far fewer kinetic limitations on the assembly of polyelectrolyte complexes in all of their forms. Site diffusion strongly depends on the salt concentration (ionic strength) of the environment, and diffusion of PDADMA sites is faster than that of PSS sites, accounting for the asymmetric nature of multilayer growth. Site diffusion is responsible for multilayer growth in the linear and into the exponential regimes, which explains how PDADMA can mysteriously "pass through" layers of PSS. Using quantitative relationships between site diffusion coefficient and salt concentration, conditions were identified that allowed the diffusion length to always exceed the film thickness, leading to full exponential growth over 3 orders of magnitude thickness. Both site and polymer diffusion were independent of molecular weight, suggesting that ion pairing density is a limiting factor. Polyelectrolyte complexes are examples of a broader class of dynamic bulk polymeric materials that (self-) assemble via the transport of cross-links or defects rather than actual molecules.

Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

PubMed Central

Yu, Chia-Chi; Wu, Hsin-jay; Deng, Ping-Yuan; Agne, Matthias T.; Snyder, G. Jeffrey; Chu, Jinn P.

2017-01-01

The thermal stability of joints in thermoelectric (TE) modules, which are degraded during interdiffusion between the TE material and the contacting metal, needs to be addressed in order to utilize TE technology for competitive, sustainable energy applications. Herein, we deposit a 200 nm-thick Zr-based thin-film metallic glass (TFMG), which acts as an effective diffusion barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate. The reaction couples structured with TFMG/TE are annealed at 673 K for 8–360 hours and analyzed by electron microscopy. No observable IMCs (intermetallic compounds) are formed at the TFMG/TE interface, suggesting the effective inhibition of atomic diffusion that may be attributed to the grain-boundary-free structure of TFMG. The minor amount of Se acts as a tracer species, and a homogeneous Se-rich region is found nearing the TFMG/TE interface, which guarantees satisfactory bonding at the joint. The diffusion of Se, which has the smallest atomic volume of all the elements from the TE substrate, is found to follow Fick’s second law. The calculated diffusivity (D) of Se in TFMG falls in the range of D~10−20–10−23(m2/s), which is 106~107 and 1012~1013 times smaller than those of Ni [10−14–10−17(m2/s)] and Cu [10−8–10−11(m2/s)] in Bi2Te3, respectively. PMID:28327655

Kondo physics in non-local metallic spin transport devices.

PubMed

O'Brien, L; Erickson, M J; Spivak, D; Ambaye, H; Goyette, R J; Lauter, V; Crowell, P A; Leighton, C

2014-05-29

The non-local spin-valve is pivotal in spintronics, enabling separation of charge and spin currents, disruptive potential applications and the study of pressing problems in the physics of spin injection and relaxation. Primary among these problems is the perplexing non-monotonicity in the temperature-dependent spin accumulation in non-local ferromagnetic/non-magnetic metal structures, where the spin signal decreases at low temperatures. Here we show that this effect is strongly correlated with the ability of the ferromagnetic to form dilute local magnetic moments in the NM. This we achieve by studying a significantly expanded range of ferromagnetic/non-magnetic combinations. We argue that local moments, formed by ferromagnetic/non-magnetic interdiffusion, suppress the injected spin polarization and diffusion length via a manifestation of the Kondo effect, thus explaining all observations. We further show that this suppression can be completely quenched, even at interfaces that are highly susceptible to the effect, by insertion of a thin non-moment-supporting interlayer.

Influence of Austenitizing Parameters on Mechanical Behavior of Press Hardened Steels

NASA Astrophysics Data System (ADS)

Golem, Lindsay

Recent increases in the Corporate Average Fuel Economy standard have led to an increased focus on lightweight materials for use in vehicle architectures. In particular, press hardened steels (PHS) have been identified as suitable materials to reduce vehicle mass while maintaining or possibly improving vehicle crash performance. A fundamental understanding of the mechanical behavior of PHS with respect to changes in processing conditions is critical to their proper use. In this work, 22MnB5 Al-Si coated blanks were austenitized at several different times and temperatures to produce a range of prior austenite grain sizes. Mechanical behavior was evaluated using smooth sided tensile testing, double edge notch tensile testing, and free bend testing. Metrics, such as notch tensile strength, notch strength ratio, and notch displacement, which is based on the fracture mechanics parameter crack tip opening displacement, were derived from double edge notch tensile testing to assess material notch sensitivity and toughness as a function of processing conditions. Additionally, bend angle at maximum load, post uniform bending slope, and energy for fracture were measured using free bend testing to provide another means for evaluating mechanical behavior. Increasing the austenitizing temperature and hold time resulted in an increase in the measured prior austenite grain size; however, elevated austenitizing temperatures also increased the thickness of the coating interdiffusion layer. In the coated material, tensile strength decreased with increasing prior austenite grain size for both notched and smooth sided tensile samples, but minimal difference was observed in the strain to failure results. Notch displacement, bend angle at maximum load, and energy for fracture during free bend testing all decreased with increasing prior austenite grain size in the coated PHS and also showed a significant drop in measured behavior for the 1025 °C for 30 minutes austenitizing condition, which was not observed in smooth sided tensile testing. The drop in mechanical behavior for this condition was not observed when the coating was removed, which suggests that the interdiffusion layer may degrade the mechanical behavior of PHS. Bend angle at maximum load and energy for fracture in bend testing also decreased for the smallest prior austenite grain size conditions, which was not observed in any of the other testing methods. Results from the three testing methods indicate that differences in the stress and strain state associated with each test influences their ability to discern differences between microstructure and processing conditions of press hardened steels.

Nuclear fuel alloys or mixtures and method of making thereof

DOEpatents

Mariani, Robert Dominick; Porter, Douglas Lloyd

2016-04-05

Nuclear fuel alloys or mixtures and methods of making nuclear fuel mixtures are provided. Pseudo-binary actinide-M fuel mixtures form alloys and exhibit: body-centered cubic solid phases at low temperatures; high solidus temperatures; and/or minimal or no reaction or inter-diffusion with steel and other cladding materials. Methods described herein through metallurgical and thermodynamics advancements guide the selection of amounts of fuel mixture components by use of phase diagrams. Weight percentages for components of a metallic additive to an actinide fuel are selected in a solid phase region of an isothermal phase diagram taken at a temperature below an upper temperature limit for the resulting fuel mixture in reactor use. Fuel mixtures include uranium-molybdenum-tungsten, uranium-molybdenum-tantalum, molybdenum-titanium-zirconium, and uranium-molybdenum-titanium systems.

Materials science in pre-plated leadframes for electronic packages

NASA Astrophysics Data System (ADS)

Liu, Lilin

Au/Pd/Ni pre-plated leadframes (PPF) are high performance frames for accommodating high-end electronic packages. Cost and reliability are major concerns in their wide application. The present work, from a materials science point view, deepens the understanding of PPFs, optimizes the conventional PPFs, develops a novel PPF architecture and models the residual stress relaxation in heteroepitaxial thin films. The wire pull test, the solderability test, and High-Resolution Transmission Electron Microscopy (HRTEM) were employed to characterize the PPFs in order to understand the relationship between performance and microstructure. We optimized the electroplating profiles and determined the minimum thickness of the Pd layer with the PPF performance satisfying the industry standards. Further increasing the Pd layer thickness beyond the critical thickness will not enhance the performance more, but increase the product cost. With the optimized electroplating profile, the electroplated Au layer is epitaxially deposited on the Pd layer, and so does the Pd layer on the Ni layer. Misfit dislocations and nanotwins are present at the interface between the Pd and Ni layers, which are generated to release the about 10.4% misfit strain between the Pd and Ni lattices. This work demonstrates that the electro-deposition technique can electroplate epitaxy-like Pd films on the highly (200) textured Ni films, which are grown on the Cu substrates. A novel technique for impeding Cu out-diffusion in Cu alloy based pre-plated leadframes was developed by electroplating a 3-4 nm thick Sn layer on a Cu alloy base prior to electroplating a Ni layer. A 10-14 nm thick epitaxy-like and dense (Cu,Ni)3Sn intermetallic compound (IMC) layer is automatically formed en route of diffuse reaction, which leads to a drastic reduction in Cu out-diffusion and hence improves significantly the protection of the leadframes against oxidation and corrosion attack. The oxidation behaviours were quantified by Electron Diffraction X-ray (EX) incorporated in Scanning Electron Microscopy (SEM) in the present work, which is a good complementary to the traditional weight gain test by a balance. A diffusion/oxidation model was developed to estimate the effective diffusion coefficient of Cu in the formed IMC nanolayers. The estimated Cu diffusion coefficient in the IMC interlayer is about 1.6x10 -22m2/s at 250°C, which is around 7~11 orders lower than the interdiffusion coefficients for eta- Cu6Sn5 and epsilon- Cu3Sn phases at corresponding temperatures. Based on the dislocation theory of twinning, analytical solutions by using the hybrid superposition and Fourier transformation approach were derived for the calculation of various energies involved in the misfit twinning process. For a given epilayer thickness and lattice mismatch strain, the twin formation energy should reach its minimum to determine the twin width and a zero minimum formation energy determines the critical thickness for misfit twinning. The effect of elastic mismatch between the epilayer and the substrate on the critical thickness was studied comprehensively, revealing that an elastically soft epilayer has a large critical thickness. Moreover, a misfit-twin-and-perfect-dislocation predominance chart is constructed to predict the predominant regions of misfit twinning and perfect dislocation in the mismatch strain and the specific twin boundary energy domain. Multiple misfit twins in epilayer/substrate systems were studied by summing up the stress and displacement fields of individual twins. In principle, the energy minimization approach can be applied to multiple misfit twins, although only periodic arrays of parallel and alternating twins were investigated here in detail. The equilibrium twin width and equilibrium twin spacing of a periodic array of twins represent the misfit twin morphology. The theoretical results indicate that the difference in elastic constants between an epilayer and its substrate has great effects on the morphology of equilibrium twins. The theoretical predictions agree with experimental observations.

COSIM: A Finite-Difference Computer Model to Predict Ternary Concentration Profiles Associated With Oxidation and Interdiffusion of Overlay-Coated Substrates

NASA Technical Reports Server (NTRS)

Nesbitt, James A.

2001-01-01

A finite-difference computer program (COSIM) has been written which models the one-dimensional, diffusional transport associated with high-temperature oxidation and interdiffusion of overlay-coated substrates. The program predicts concentration profiles for up to three elements in the coating and substrate after various oxidation exposures. Surface recession due to solute loss is also predicted. Ternary cross terms and concentration-dependent diffusion coefficients are taken into account. The program also incorporates a previously-developed oxide growth and spalling model to simulate either isothermal or cyclic oxidation exposures. In addition to predicting concentration profiles after various oxidation exposures, the program can also be used to predict coating life based on a concentration dependent failure criterion (e.g., surface solute content drops to 2%). The computer code is written in FORTRAN and employs numerous subroutines to make the program flexible and easily modifiable to other coating oxidation problems.

Oxygen influencing the photocarriers lifetime of CH3NH3PbI3-xClx film grown by two-step interdiffusion method and its photovoltaic performance

NASA Astrophysics Data System (ADS)

Yuan, Shuai; Qiu, Zhiwen; Zhang, Hailiang; Gong, Haibo; Hao, Yufeng; Cao, Bingqiang

2016-01-01

During the growth of CH3NH3PbI3-xClx (MAPbI3-xClx) perovskite films by the two-step inter-diffusion method, the presence of a trace amount of oxygen gas is critical to their physical properties and photovoltaic performance. As the oxygen concentration increases, poor film morphologies and incomplete surface coverage are observed. Moreover, by XRD, Raman scattering, and photoluminescence measurements, we find that MAPbI3-xClx grains become more distorted and the electron-hole recombination rate dramatically increases. Higher oxygen concentration triggers a sharp decrease in the current density and the fill factor of corresponding solar cells, which degrades device performance, on average, from 14.3% to 4.4%. This work proves the importance of controlling the oxygen atmosphere in the fabrication of high-performance perovskite solar cells.

Inter-Diffusion in the Presence of Free Convection

NASA Technical Reports Server (NTRS)

Gupta, Prabhat K.

1999-01-01

Because of their technological importance, establishment of the precise values of interdiffusion coefficients is important in multicomponent fluid systems. Such values are not available because diffusion is influenced by free convection due to compositionally induced density variations. In this project, earth based diffusion experiments are being performed in a viscous fluid system PbO-SiO2 at temperatures between 500-1000 C. This system is chosen because it shows a large variation in density with small changes in composition and is expected to show a large free convection effect. Infinite diffusion couples at different temperatures and times are being studied with different orientations with respect to gravity. Composition fields will be measured using an Electron Microprobe Analyzer and will be compared with the results of a complementary modeling study to extract the values of the true diffusion coefficient from the measured diffusion profiles.

Reaction diffusion in the NiCrAl and CoCrAl systems

NASA Technical Reports Server (NTRS)

Levine, S. R.

1978-01-01

The paper assesses the effect of overlay coating and substrate composition on the kinetics of coating depletion by interdiffusion. This is accomplished by examining the constitution, kinetics and activation energies for a series of diffusion couples primarily of the NiCrAl/Ni-10Cr or CoCrAl/Ni-10Cr type annealed at temperatures in the range 1000-1205 C for times up to 500 hr. A general procedure is developed for analyzing diffusion in multicomponent multiphase systems. It is shown that by introducing the concept of beta-source strength, which can be determined from appropriate phase diagrams, the Wagner solution for consumption of a second phase in a semiinfinite couple is successfully applied to the analysis of MCrAl couples. Thus, correlation of beta-recession rate constants with couple composition, total and diffusional activation energies, and interdiffusion coefficients are determined.

Glide twinning and pseudotwinning in peristerite: Si,Al diffusional stabilization and implications for the peristerite solvus

NASA Astrophysics Data System (ADS)

Brown, William L.

1989-07-01

Albite glide pseudotwins related to grain-boundary stresses have been observed in an exsolved peristerite (Brown 1989). The glide operation transposes the pre-existing periodic oligoclase/albite lamellae and interfaces into a position rotated by only ˜0.5° in the pseudotwins, but transforms the indices from (1bar 80) outside to ( 081) inside the pseudotwin. The pseudotwin is anti-ordered with respect to Al and Si and both it and the transposed interface are unstable. They should revert to the initial state on stress removal. If however the stresses are maintained for a sufficiently long time, the pseudotwins are stabilized by inversion of Si,Al order and re-orientation of the interface by an angle of about 30° into a position close to \\underline {(1bar 80)} . The continuous lamellae break up into a series of discs by diffusion of NaSi and CaAl, the minimum diffusion path being about the same as the thickness of the lamellae. On extrapolating available interdiffusion data in Ab-rich plagioclases to low temperatures, possible diffusion times may be calculated. The calculated times are long so that either the peristerite miscibility gap must be at a higher temperature than previously supposed or the low-temperature interdiffusion coefficients must be higher than the extrapolated experimental ones, or both. From recent data on ordering in albite, the crest of the gap is estimated to lie close to 650 625° C at low pressure and it is possible that interdiffusion under natural conditions is facilitated by hydrogen (protons) in feldspars.

Formation of the low-resistivity compound Cu{sub 3}Ge by low-temperature treatment in an atomic hydrogen flux

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erofeev, E. V., E-mail: erofeev@micran.ru; Kazimirov, A. I.; Fedin, I. V.

The systematic features of the formation of the low-resistivity compound Cu{sub 3}Ge by low-temperature treatment of a Cu/Ge two-layer system in an atomic hydrogen flux are studied. The Cu/Ge two-layer system is deposited onto an i-GaAs substrate. Treatment of the Cu/Ge/i-GaAs system, in which the layer thicknesses are, correspondingly, 122 and 78 nm, in atomic hydrogen with a flux density of 10{sup 15} at cm{sup 2} s{sup –1} for 2.5–10 min at room temperature induces the interdiffusion of Cu and Ge, with the formation of a polycrystalline film containing the stoichiometric Cu{sub 3}Ge phase. The film consists of vertically orientedmore » grains 100–150 nm in size and exhibits a minimum resistivity of 4.5 µΩ cm. Variations in the time of treatment of the Cu/Ge/i-GaAs samples in atomic hydrogen affect the Cu and Ge depth distribution, the phase composition of the films, and their resistivity. Experimental observation of the synthesis of the Cu{sub 3}Ge compound at room temperature suggests that treatment in atomic hydrogen has a stimulating effect on both the diffusion of Cu and Ge and the chemical reaction of Cu{sub 3}Ge-compound formation. These processes can be activated by the energy released upon the recombination of hydrogen atoms adsorbed at the surface of the Cu/Ge/i-GaAs sample.« less

Calculation of Transport Coefficients in Dense Plasma Mixtures

NASA Astrophysics Data System (ADS)

Haxhimali, T.; Cabot, W. H.; Caspersen, K. J.; Greenough, J.; Miller, P. L.; Rudd, R. E.; Schwegler, E. R.

2011-10-01

We use classical molecular dynamics (MD) to estimate species diffusivity and viscosity in mixed dense plasmas. The Yukawa potential is used to describe the screened Coulomb interaction between the ions. This potential has been used widely, providing the basis for models of dense stellar materials, inertial confined plasmas, and colloidal particles in electrolytes. We calculate transport coefficients in equilibrium simulations using the Green- Kubo relation over a range of thermodynamic conditions including the viscosity and the self - diffusivity for each component of the mixture. The interdiffusivity (or mutual diffusivity) can then be related to the self-diffusivities by using a generalization of the Darken equation. We have also employed non-equilibrium MD to estimate interdiffusivity during the broadening of the interface between two regions each with a high concentration of either species. Here we present results for an asymmetric mixture between Ar and H. These can easily be extended to other plasma mixtures. A main motivation for this study is to develop accurate transport models that can be incorporated into the hydrodynamic codes to study hydrodynamic instabilities. We use classical molecular dynamics (MD) to estimate species diffusivity and viscosity in mixed dense plasmas. The Yukawa potential is used to describe the screened Coulomb interaction between the ions. This potential has been used widely, providing the basis for models of dense stellar materials, inertial confined plasmas, and colloidal particles in electrolytes. We calculate transport coefficients in equilibrium simulations using the Green- Kubo relation over a range of thermodynamic conditions including the viscosity and the self - diffusivity for each component of the mixture. The interdiffusivity (or mutual diffusivity) can then be related to the self-diffusivities by using a generalization of the Darken equation. We have also employed non-equilibrium MD to estimate interdiffusivity during the broadening of the interface between two regions each with a high concentration of either species. Here we present results for an asymmetric mixture between Ar and H. These can easily be extended to other plasma mixtures. A main motivation for this study is to develop accurate transport models that can be incorporated into the hydrodynamic codes to study hydrodynamic instabilities. This work was performed under the auspices of the US Dept. of Energy by Lawrence Livermore National Security, LLC under Contract DE-AC52-07NA27344.

InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

NASA Astrophysics Data System (ADS)

Alhashim, Hala H.; Khan, Mohammed Zahed Mustafa; Majid, Mohammed A.; Ng, Tien K.; Ooi, Boon S.

2015-10-01

We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO2 and Si3N4 films, HfO2 and SrTiO3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175 nm (>148 meV) is obtained for HfO2 capped sample. Likewise, investigation of TiO2, Al2O3, and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ˜1060-1200 nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green-yellow-orange coherent light generation, as well as addressing photonic integration via area-selective, and postgrowth bandgap engineering.

Direct imaging of thermally-activated grain-boundary diffusion in Cu/Co/IrMn/Pt exchange-bias structures using atom-probe tomography

NASA Astrophysics Data System (ADS)

Letellier, F.; Lechevallier, L.; Lardé, R.; Le Breton, J.-M.; Akmaldinov, K.; Auffret, S.; Dieny, B.; Baltz, V.

2014-11-01

Magnetic devices are often subject to thermal processing steps, such as field cooling to set exchange bias and annealing to crystallize amorphous magnetic electrodes. These processing steps may result in interdiffusion and the subsequent deterioration of magnetic properties. In this study, we investigated thermally-activated diffusion in Cu/Co/IrMn/Pt exchange biased polycrystalline thin-film structures using atom probe tomography. Images taken after annealing at 400 °C for 60 min revealed Mn diffusion into Co grains at the Co/IrMn interface and along Pt grain boundaries for the IrMn/Pt stack, i.e., a Harrison type C regime. Annealing at 500 °C showed further Mn diffusion into Co grains. At the IrMn/Pt interface, annealing at 500 °C led to a type B behavior since Mn diffusion was detected both along Pt grain boundaries and also into Pt grains. The deterioration of the films' exchange bias properties upon annealing was correlated to the observed diffusion. In particular, the topmost Pt capping layer thickness turned out to be crucial since a faster deterioration of the exchange bias properties for thicker caps was observed. This is consistent with the idea that Pt acts as a getter for Mn, drawing Mn out of the IrMn layer.

Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

NASA Technical Reports Server (NTRS)

Choi, S. W.; Lucovsky, G.; Bachmann, Klaus J.

1993-01-01

Thin homoepitaxial films of gallium phosphide (GaP) were grown by remote plasma enhanced chemical vapor deposition utilizing in situ generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (rf) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate, however, the saturation of the growth rate at even higher rf power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

NASA Technical Reports Server (NTRS)

Choi, S. W.; Lucovsky, G.; Bachmann, K. J.

1992-01-01

Thin homoepitaxial films of gallium phosphide (GaP) have been grown by remote plasma enhanced chemical vapor deposition utilizing in situ-generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (RF) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate; however, the saturation of the growth rate at even higher RF power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

Cobalt Modification of Thin Rutile Films Magnetron-Sputtered in Vacuum

NASA Astrophysics Data System (ADS)

Afonin, N. N.; Logacheva, V. A.

2018-04-01

Using X-ray phase analysis, atomic force microscopy, and secondary ion mass-spectrometry, the phase formation and component distribution in a Co-TiO2 film system have been investigated during magnetron sputtering of the metal on the oxide and subsequent vacuum annealing. It has been found that cobalt diffuses deep into titanium oxide to form complex oxides CoTi2O5 and CoTiO3. A mechanism behind their formation at grain boundaries throughout the thickness of the TiO2 film is suggested. It assumes the reactive diffusion of cobalt along grain boundaries in the oxide. A quantitative model of reactive interdiffusion in a bilayer polycrystalline metal-oxide film system with limited solubility of components has been developed. The individual diffusion coefficients of cobalt and titanium have been determined in the temperature interval 923-1073 K.

Optical and electrical properties of bismuth-sulfide (Bi2S3) thin films prepared by thermal evaporation.

NASA Astrophysics Data System (ADS)

Mahmoud, Siham; Sharaf, Fouad

Thin films of Bi2S3, of thickness in the range 300 to 500 nm, were produced by thermal evaporation technique. The reaction consisted in depositing the two elements (bismuth and sulfur) from a boat source and allowing their atoms to interdiffuse to form the compound during the deposition on quartz substrates. The material has been characterized by X-ray studies, optical and electrical measurements. When these films were annealed at 353 K, 393 K and 453 K for 5 hours, a nearly amorphous to polycrystalline transition was observed. The absorption coefficient revealed the existence of an allowed direct transition with Eg = 1.56 eV. The activation energies for electrical conduction in low and high temperature regions are 0.28 eV and 0.73 eV, respectively.

Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates

NASA Astrophysics Data System (ADS)

Fenwick, William Edward

GaN-based light emitting diodes (LEDs) face several challenges if the technology is to continue to make a significant impact in general illumination, and on technology that has become known as solid state lighting (SSL). Two of the most pressing challenges for the continued penetration of SSL into traditional lighting applications are efficacy and total lumens from the device, and their related cost. The development of alternative substrate technologies is a promising avenue toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature technologies with a well-understood cost base. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. These substrates offer the ability to access both higher efficacy and lumen devices (ZnO) at a much reduced cost. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on both ZnO and Si. ZnO is a promising substrate for growth of low defect-density GaN because of its similar lattice constant and thermal expansion coefficient. The major hurdles for GaN growth on ZnO are the instability of the substrate in a hydrogen atmosphere, which is typical of nitride growth conditions, and the inter-diffusion of zinc and oxygen from the substrate into the GaN-based epitaxial layer. A process was developed for the MOCVD growth of GaN and InxGa 1-xN on ZnO that attempted to address these issues. The structural and optical properties of these films were studied using various techniques. X-ray diffraction (XRD) showed the growth of wurtzite GaN on ZnO, and room-temperature photoluminescence (RT-PL) showed near band-edge luminescence from the GaN and InxGa1-xN layers. However, high zinc and oxygen concentrations due to interdiffusion near the ZnO substrate remained an issue; therefore, the diffusion of zinc and oxygen into the subsequent GaN layer was studied in more detail. Several approaches were investigated---for example, transition layers such as Al2O3 and Al xGa1-xN/GaN---to minimize diffusion of these impurities into the GaN layer. Silicon, due to its prevalence, is the most promising material for the development of an inexpensive, large-area substrate technology. The challenge in MOCVD growth of GaN on Si is the tensile strain induced by the lattice and thermal mismatch between GaN and Si and the formation of anti-phase boundaries. Typical approaches to solve these problems involve complicated and multiple buffer layer structures, which lead to relatively slow growth rates. In this work, a thin atomic layer deposition (ALD)-grown Al2O3 interlayer was employed to relieve strain and increase material quality while also simplifying the growth process. While some residual strain was still observed in the GaN material by XRD and PL, the use of this oxide interlayer leads to an improvement in thin film quality as seen by a reduction in both crack density (<1 mm-2) on ALD-Al2O3/Si) and screw dislocation density (from 3x109cm-2 on bare Si to 2x108cm-2 on ALD-Al 2O3/Si) in the GaN films. A side-by-side comparison of GaN-based multiple quantum well LEDs grown on sapphire and on Al2O3/Si shows similar performance characteristic for both device structures. A redshift in peak emission wavelength was also observed on silicon compared to sapphire, and this is attributed to higher indium content due to the slight tensile strain in the layers on silicon. IQE of the devices on silicon is ˜32% as measured by LT-PL, compared to ˜37% on sapphire, but this difference can be assigned to the difference in indium compositions. These results show a great promise toward an inexpensive, large-area, silicon-based substrate technology for MOCVD growth of the next generation of GaN-based optoelectronic devices for SSL and other applications.

Ultrahigh Energy Density in SrTiO3 Film Capacitors.

PubMed

Hou, Chuangming; Huang, Weichuan; Zhao, Wenbo; Zhang, Dalong; Yin, Yuewei; Li, Xiaoguang

2017-06-21

Solid-state dielectric film capacitors with high-energy-storage density will further promote advanced electronic devices and electrical power systems toward miniaturization, lightweight, and integration. In this study, the influence of interface and thickness on energy storage properties of SrTiO 3 (STO) films grown on La 0.67 Sr 0.33 MnO 3 (LSMO) electrode are systematically studied. The cross-sectional high resolution transmission electron microscopy reveals an ion interdiffusion layer and oxygen vacancies at the STO/LSMO interface. The capacitors show good frequency stability and increased dielectric constant with increasing STO thickness (410-710 nm). The breakdown strength (E b ) increases with decreasing STO thickness and reaches 6.8 MV/cm. Interestingly, the E b under positive field is enhanced significantly and an ultrahigh energy density up to 307 J/cm 3 with a high efficiency of 89% is realized. The enhanced E b may be related to the modulation of local electric field and redistribution of oxygen vacancies at the STO/LSMO interface. Our results should be helpful for potential strategies to design devices with ultrahigh energy density.

Atomistic modeling and simulation of the role of Be and Bi in Al diffusion in U-Mo fuel

NASA Astrophysics Data System (ADS)

Hofman, G. L.; Bozzolo, G.; Mosca, H. O.; Yacout, A. M.

2011-07-01

Within the RERTR program, previous experimental and modeling studies identified Si as the alloying addition to the Al cladding responsible for inhibiting Al interdiffusion in the UMo fuel. However, difficulties with reprocessing have rendered this choice inappropriate, leading to the need to study alternative elements. In this work, we discuss the results of an atomistic modeling effort which allows for the systematic study of several possible alloying additions. Based on the behavior observed in the phase diagrams, beryllium or bismuth additions suggest themselves as possible options to replace Si. The results of temperature-dependent simulations using the Bozzolo-Ferrante-Smith (BFS) method for the energetics for varying concentrations of either element are shown, indicating that Be could have a substantial effect in stopping Al interdiffusion, while Bi does not. Details of the calculations and the dependence of the role of each alloying addition as a function of temperature and concentration (of beryllium or bismuth in Al) are shown.

Enhanced water vapour flow in silica microchannels and interdiffusive water vapour flow through anodic aluminium oxide (AAO) membranes

NASA Astrophysics Data System (ADS)

Lei, Wenwen; McKenzie, David R.

2015-12-01

Enhanced liquid water flows through carbon nanotubes reinvigorated the study of moisture permeation through membranes and micro- and nano-channels. The study of water vapour through micro-and nano-channels has been neglected even though water vapour is as important as liquid water for industry, especially for encapsulation of electronic devices. Here we measure moisture flow rates in silica microchannels and interdiffusive water vapour flows in anodic aluminium oxide (AAO) membrane channels for the first time. We construct theory for the flow rates of the dominant modes of water transport through four previously defined standard configurations and benchmark it against our new measurements. The findings show that measurements of leak behaviour made using other molecules, such as helium, are not reliable. Single phase water vapour flow is overestimated by a helium measurement, while Washburn or capillary flow is underestimated or for all channels when boundary slip applies, to an extent that depends on the slip length for the liquid phase flows.

Biobased, self-healable, high strength rubber with tunicate cellulose nanocrystals.

PubMed

Cao, Liming; Yuan, Daosheng; Xu, Chuanhui; Chen, Yukun

2017-10-19

Cellulose nanocrystals represent a promising and environmentally friendly reinforcing nanofiller for polymers, especially for rubbers and elastomers. Here, a simple approach via latex mixing is used to fabricate biobased, healable rubber with high strength based on epoxidized natural rubber (ENR). Tunicate cellulose nanocrystals (t-CNs) isolated from marine biomass with a high aspect ratio are used to improve both mechanical properties and self-healing behavior of the material. By introducing dynamic hydrogen bond supramolecular networks between oxygenous groups of ENR and hydroxyl groups on the t-CN surface, together with chain interdiffusion in permanently but slightly cross-linked rubber, self-healing and mechanical properties are facilitated significantly in the resulting materials. Macroscopic tensile healing behavior and microscopic morphology analyses are carried out to evaluate the performance of the materials. Both t-CN content and healing time have significant influence on healing behavior. The results indicate that a synergistic effect between molecular interdiffusion and dynamic hydrogen bond supramolecular networks leads to the improved self-healing behavior.

Microstructural development from interdiffusion and reaction between Usbnd Mo and AA6061 alloys annealed at 600° and 550 °C

NASA Astrophysics Data System (ADS)

Perez, E.; Keiser, D. D.; Sohn, Y. H.

2016-08-01

The U.S. Material Management and Minimization Reactor Conversion Program is developing low enrichment fuel systems encased in Al-alloy for use in research and test reactors. Monolithic fuel plates have local regions where the Usbnd Mo fuel plate may come into contact with the Al-alloy 6061 (AA6061) cladding. This results in the development of interdiffusion zones with complex microstructures with multiple phases. In this study, the microstructural development of diffusion couples, Usbnd 7 wt%Mo, Usbnd 10 wt%Mo, and Usbnd 12 wt%Mo vs. AA6061, annealed at 600 °C for 24 h and at 550 °C for 1, 5, and 20 h, were analyzed by scanning electron microscopy with x-ray energy dispersive spectroscopy. The microstructural development and kinetics were compared to diffusion couples Usbnd Mo vs. high purity Al and binary Alsbnd Si alloys. The diffusion couples developed complex interaction regions where phase development was influenced by the alloying additions of the AA6061.

COSIM: A Finite-Difference Computer Model to Predict Ternary Concentration Profiles Associated with Oxidation and Interdiffusion of Overlay-Coated Substrates

NASA Technical Reports Server (NTRS)

Nesbitt, James A.

2000-01-01

A finite-difference computer program (COSIM) has been written which models the one-dimensional, diffusional transport associated with high-temperature oxidation and interdiffusion of overlay-coated substrates. The program predicts concentration profiles for up to three elements in the coating and substrate after various oxidation exposures. Surface recession due to solute loss is also predicted. Ternary cross terms and concentration-dependent diffusion coefficients are taken into account. The program also incorporates a previously-developed oxide growth and spalling model to simulate either isothermal or cyclic oxidation exposures. In addition to predicting concentration profiles after various oxidation exposures, the program can also be used to predict coating fife based on a concentration dependent failure criterion (e.g., surface solute content drops to two percent). The computer code, written in an extension of FORTRAN 77, employs numerous subroutines to make the program flexible and easily modifiable to other coating oxidation problems.

Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions and ex situ annealing

NASA Astrophysics Data System (ADS)

Komissarova, T. A.; Lebedev, M. V.; Sorokin, S. V.; Klimko, G. V.; Sedova, I. V.; Gronin, S. V.; Komissarov, K. A.; Calvet, W.; Drozdov, M. N.; Ivanov, S. V.

2017-04-01

A study of electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces (HI) in dependence on molecular beam epitaxy (MBE) growth conditions and post-growth annealing was performed. Initial GaAs surface reconstructions ((2 × 4)As or c(4 × 4)As) and ZnSe growth mode (MBE or migration-enhanced epitaxy (MEE)) were varied for different undoped and n-doped heterovalent structures. Although all the structures have low extended defect density (less than 106 cm-2) and rather small (less than 5 nm) atomic interdiffusion at the HI, the structural, chemical and electronic properties of the near-interface area (short-distance interdiffusion effects, dominant chemical bonds, and valence band offset values) as well as electrical properties of the n-GaAs/n-ZnSe heterovalent structures were found to be influenced strongly by the MBE growth conditions and post-growth annealing.

Effects of MAR-M247 substrate (modified) composition on coating oxidation coating/substrate interdiffusion. M.S. Thesis. Final Report; [protective coatings for hot section components of gas turbine engines

NASA Technical Reports Server (NTRS)

Pilsner, B. H.

1985-01-01

The effects of gamma+gamma' Mar-M247 substrate composition on gamma+beta Ni-Cr-Al-Zr coating oxidation and coating/substrate interdiffusion were evaluated. These results were also compared to a prior study for a Ni-Cr-Al-Zr coated gamma Ni-Cr-Al substrate with equivalent Al and Cr atomic percentages. Cyclic oxidation behavior at 1130 C was investigated using change in weight curves. Concentration/distance profiles were measured for Al, Cr, Co, W, and Ta. The surface oxides were examined by X-ray diffraction and scanning electron microscopy. The results indicate that variations of Ta and C concentrations in the substrate do not affect oxidation resistance, while additions of grain boundary strengthening elements (Zr, Hf, B) increase oxidation resistance. In addition, the results indicate that oxidation phenomena in gamma+beta/gamma+gamma' Mar-M247 systems have similar characteristics to the l gamma+beta/gamma Ni-Cr-Al system.

S–Te Interdiffusion within Grains and Grain Boundaries in CdTe Solar Cells

DOE PAGES

Li, C.; Poplawsky, J.; Paudel, N.; ...

2014-09-19

At the CdTe/CdS interface, a significant Te-S interdiffusion has been found a few nanometers into the grain interiors with scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). S substitution at Te sites has been directly resolved in CdTe with STEM Z-contrast images. Moreover, when enough S substitutes for Te, a structural transformation from zinc-blende to wurtzite has been observed. Cl segregation has also been found at the interface. STEM electron-beam-induced current (EBIC) shows that the p-n junction occurs a few nm into the CdTe grains, which is consistent with the S diffusion range we observe. The shiftmore » of the p-n junction suggests a buried homo-junction which would help reduce non-radiative recombination at the junction. Meanwhile, long-range S diffusion in CdTe grain boundaries (GBs) has been detected, as well as Te and Cl diffusion in CdS GBs.« less

Experimental Design for Evaluation of Co-extruded Refractory Metal/Nickel Base Superalloy Joints

DOE Office of Scientific and Technical Information (OSTI.GOV)

ME Petrichek

2005-12-16

Prior to the restructuring of the Prometheus Program, the NRPCT was tasked with delivering a nuclear space reactor. Potential NRPCT nuclear space reactor designs for the Prometheus Project required dissimilar materials to be in contact with each other while operating at extreme temperatures under irradiation. As a result of the high reactor core temperatures, refractory metals were the primary candidates for many of the reactor structural and cladding components. They included the tantalum-base alloys ASTAR-811C and Ta-10W, the niobium-base alloy FS-85, and the molybdenum base alloys Moly 41-47.5 Rhenium. The refractory metals were to be joined to candidate nickel basemore » alloys such as Haynes 230, Alloy 617, or Nimonic PE 16 either within the core if the nickel-base alloys were ultimately selected to form the outer core barrel, or at a location exterior to the core if the nickel-base alloys were limited to components exterior to the core. To support the need for dissimilar metal joints in the Prometheus Project, a co-extrusion experiment was proposed. There are several potential methods for the formation of dissimilar metal joints, including explosive bonding, friction stir welding, plasma spray, inertia welding, HIP, and co-extrusion. Most of these joining methods are not viable options because they result in the immediate formation of brittle intermetallics. Upon cooling, intermetallics form in the weld fusion zone between the joined metals. Because brittle intermetallics do not form during the initial bonding process associated with HIP, co-extrusion, and explosive bonding, these three joining procedures are preferred for forming dissimilar metal joints. In reference to a Westinghouse Astronuclear Laboratory report done under a NASA sponsored program, joints that were fabricated between similar materials via explosive bonding had strengths that were directly affected by the width of the diffusion barrier. It was determined that the diffusion zone should not exceed a critical thickness (0.0005 in.). A diffusion barrier that exceeded this thickness would likely fail. The joint fabrication method must therefore mechanically bond the two materials causing little or no interdiffusion upon formation. Co-extrusion fits this description since it forms a mechanical joint between two materials by using heat and pressure. The two materials to be extruded are first assembled and sealed within a co-extrusion billet which is subsequently heated and then extruded through a die. For a production application, once the joint is formed, it is dejacketed to remove the outer canister. The remaining piece consists of two materials bonded together with a thin diffusion barrier. Therefore, the long-term stability of the joint is determined primarily by the kinetics of interdiffusion reaction between the two materials. An experimental design for co-extrusion of refractory metals and nickel-based superalloys was developed to evaluate this joining process and determine the long-term stability of the joints.« less

Growth kinetics and microstructural evolution during hot isostatic pressing of U-10 wt.% Mo monolithic fuel plate in AA6061 cladding with Zr diffusion barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Y. Park; J. Yoo; K. Huang

2014-04-01

Phase constituents and microstructure changes in RERTR fuel plate assemblies as functions of temperature and duration of hot-isostatic pressing (HIP) during fabrication were examined. The HIP process was carried out as functions of temperature (520, 540, 560 and 580 °C for 90 min) and time (45–345 min at 560 °C) to bond 6061 Al-alloy to the Zr diffusion barrier that had been co-rolled with U-10 wt.% Mo (U10Mo) fuel monolith prior to the HIP process. Scanning and transmission electron microscopies were employed to examine the phase constituents, microstructure and layer thickness of interaction products from interdiffusion. At the interface betweenmore » the U10Mo and Zr, following the co-rolling, the UZr2 phase was observed to develop adjacent to Zr, and the a-U phase was found between the UZr2 and U10Mo, while the Mo2Zr was found as precipitates mostly within the a-U phase. The phase constituents and thickness of the interaction layer at the U10Mo-Zr interface remained unchanged regardless of HIP processing variation. Observable growth due to HIP was only observed for the (Al,Si)3Zr phase found at the Zr/AA6061 interface, however, with a large activation energy of 457 ± 28 kJ/mole. Thus, HIP can be carried to improve the adhesion quality of fuel plate without concern for the excessive growth of the interaction layer, particularly at the U10Mo-Zr interface with the a-U, Mo2Zr, and UZr2 phases.« less

Growth kinetics and microstructural evolution during hot isostatic pressing of U-10 wt.% Mo monolithic fuel plate in AA6061 cladding with Zr diffusion barrier

NASA Astrophysics Data System (ADS)

Park, Y.; Yoo, J.; Huang, K.; Keiser, D. D.; Jue, J. F.; Rabin, B.; Moore, G.; Sohn, Y. H.

2014-04-01

Phase constituents and microstructure changes in RERTR fuel plate assemblies as functions of temperature and duration of hot-isostatic pressing (HIP) during fabrication were examined. The HIP process was carried out as functions of temperature (520, 540, 560 and 580 °C for 90 min) and time (45-345 min at 560 °C) to bond 6061 Al-alloy to the Zr diffusion barrier that had been co-rolled with U-10 wt.% Mo (U10Mo) fuel monolith prior to the HIP process. Scanning and transmission electron microscopies were employed to examine the phase constituents, microstructure and layer thickness of interaction products from interdiffusion. At the interface between the U10Mo and Zr, following the co-rolling, the UZr2 phase was observed to develop adjacent to Zr, and the α-U phase was found between the UZr2 and U10Mo, while the Mo2Zr was found as precipitates mostly within the α-U phase. The phase constituents and thickness of the interaction layer at the U10Mo-Zr interface remained unchanged regardless of HIP processing variation. Observable growth due to HIP was only observed for the (Al,Si)3Zr phase found at the Zr/AA6061 interface, however, with a large activation energy of 457 ± 28 kJ/mole. Thus, HIP can be carried to improve the adhesion quality of fuel plate without concern for the excessive growth of the interaction layer, particularly at the U10Mo-Zr interface with the α-U, Mo2Zr, and UZr2 phases.

Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Conti, G.; Nemšák, S.; Kuo, C.-T.; Gehlmann, M.; Conlon, C.; Keqi, A.; Rattanachata, A.; Karslıoǧlu, O.; Mueller, J.; Sethian, J.; Bluhm, H.; Rault, J. E.; Rueff, J. P.; Fang, H.; Javey, A.; Fadley, C. S.

2018-05-01

Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS) and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with ångström precision. We determined that (i) the exposure to air induced the formation of an InAsO4 layer on top of the stoichiometric InAs(QM); (ii) the top interface between the air-side InAsO4 and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; (iii) the bottom interface between the InAs(QM) and the native oxide SiO2 on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO2/(Si/Mo) substrate was determined by HXPS. The value of VBO = 0.2 ± 0.04 eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO2 heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.

ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

NASA Astrophysics Data System (ADS)

Pavlidis, S.; Bayraktaroglu, B.; Leedy, K.; Henderson, W.; Vogel, E.; Brand, O.

2017-11-01

The suitability of atomic layer deposited (ALD) titanium oxide (TiO x ) as a top gate dielectric and passivation layer for indium gallium zinc oxide (InGaZnO115) ion sensitive field effect transistors (ISFETs) is investigated. TiO x is an attractive barrier material, but reports of its use for InGaZnO thin film transistor (TFT) passivation have been conflicting thus far. In this work, it is found that the passivated TFT’s behavior depends on the TiO x deposition temperature, affecting critical device characteristics such as threshold voltage, field-effect mobility and sub-threshold swing. An O2 annealing step is required to recover TFT performance post passivation. It is also observed that the positive bias stress response of the passivated TFTs improves compared the original bare device. Secondary ion mass spectroscopy excludes the effects of hydrogen doping and inter-diffusion as sources of the temperature-dependent performance change, therefore indicating that oxygen gettering induced by TiO x passivation is the likely source of oxygen vacancies and, consequently, carriers in the InGaZnO film. It is also shown that potentiometric sensing using ALD TiO x exhibits a near Nernstian response to pH change, as well as minimizes V TH drift in TiO x passivated InGaZnO TFTs immersed in an acidic liquid. These results add to the understanding of InGaZnO passivation effects and underscore the potential for low-temperature fabricated InGaZnO ISFETs to be used as high-performance mobile chemical sensors.

Interface Reactions and Synthetic Reaction of Composite Systems

PubMed Central

Park, Joon Sik; Kim, Jeong Min

2010-01-01

Interface reactions in composite systems often determine their overall properties, since product phases usually formed at interfaces during composite fabrication processing make up a large portion of the composites. Since most composite materials represent a ternary or higher order materials system, many studies have focused on analyses of diffusion phenomena and kinetics in multicomponent systems. However, the understanding of the kinetic behavior increases the complexity, since the kinetics of each component during interdiffusion reactions need to be defined for interpreting composite behaviors. From this standpoint, it is important to clarify the interface reactions for producing compatible interfaces with desired product phases. A thermodynamic evaluation such as a chemical potential of involving components can provide an understanding of the diffusion reactions, which govern diffusion pathways and product phase formation. A strategic approach for designing compatible interfaces is discussed in terms of chemical potential diagrams and interface morphology, with some material examples.

Study of behaviors of aluminum overlayers deposited on uranium via AES, EELS, and XPS

NASA Astrophysics Data System (ADS)

Liu, Kezhao; Luo, Lizhu; Zhou, Wei; Yang, Jiangrong; Xiao, Hong; Hong, Zhanglian; Yang, Hui

2013-04-01

Aluminum overlayers on uranium were prepared by sputtering at room temperature in an ultra-high vacuum chamber. The growth mode of aluminum overlayers and behaviors of the Al/U interface reaction were studied in situ by auger electron spectroscopy, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. The results suggested that the interdiffusion took place at the Al/U interface during the initial stage of deposition. The U4f spectra of the Al/U interface showed strong correlation satellites at binding energies of 380.4 and 392.7 eV and plasma loss features at 404.2 eV, respectively. The interactions between aluminum and uranium yielded the intermetallic compound of UAlx, inducing the shift to a low binding energy for Al2p peaks. The results indicated that aluminum overlayers were formed on the uranium by sputtering in an island growth mode.

High temperature dispersion strengthening of NiAl

NASA Technical Reports Server (NTRS)

Sherman, M.; Vedula, K.

1986-01-01

A potential high temperature strengthening mechanism for alloys based on the intermetallic compound NiAl was investigated. This study forms part of an overall program at NASA Lewis Research Center for exploring the potential of alloys based on NiAl for high temperature applications. An alloy containing 2.26 at% Nb and produced by hot extrusion of blended powders was examined in detail using optical and electron microscopy. Interdiffusion between the blended Nb and NiAl powders results in the formation of intermediate phases. A fine dispersion of precipitates of a hexagonal, ordered NiAlNb phases in a matrix of NiAl can be produced and this results in strengthening of the alloy by interfering with dislocation motion at high temperature. These precipitates are, however, found to coarsen during the high temperature (1300 K) deformation at slow strain rates and this may impose some limitatioins on the use of this strengthening mechanism.

Experimental Determination of Fe-Mg Interdiffusion Coefficients in Orthopyroxene Using Pulsed Laser Ablation and Nanoscale Thin Films

NASA Astrophysics Data System (ADS)

Ter Heege, J. H.; Dohmen, R.; Becker, H.; Chakraborty, S.

2006-12-01

Fe-Mg interdiffusion in silicate minerals is of interest in petrological studies for determining the closure temperature of geothermometers and for determining cooling rates from compositional profiles. It is also relevant for studies of the physical properties of silicates, such as rheology or electrical conductivity, because knowledge of its dependence on oxygen fugacity can aid in the understanding of point defect chemistry. Compositionally zoned orthopyroxenes are common in meteorites, mantle rocks, lower crustal rocks and a variety of plutonic and volcanic igneous rocks. However, experimental difficulties have precluded direct determination of Fe-Mg diffusion rates in orthopyroxenes so far and the available information comes from (1) Mg tracer diffusion coefficients obtained from isotope tracer studies using enriched ^{25}MgO films [1], (2) calculations of interdiffusion rates based on the (diffusion-controlled) order-disorder kinetics measured in orthopyroxene [2], and (3) indirect estimates from the comparison of diffusion widths in coexisting garnets and olivines, in which Fe-Mg diffusion rates are relatively well known [e.g., 3]. We have directly measured Fe-Mg interdiffusion coefficients parallel to the [001] direction in two natural orthopyroxene single crystals (approximately En95Fs5 and En90Fs10) using diffusion couples consisting of an olivine thin film (Fo30Fa70, typically 20 - 50 nm thick) deposited under vacuum on pre-heated, polished and oriented pyroxene single crystals using a pulsed laser ablation deposition technique. Samples were annealed for 4 - 337 hours at 800 - 1100 °C under atmospheric pressure in a continuous flow of CO + CO2 to control the oxygen fugacity between 10-16 and 10^{-12} bar within the stability field of pyroxene. Film thickness and compositional profiles were measured using Rutherford backscattering Spectroscopy (RBS) on reference and annealed samples, and Fe concentration depth profiles were extracted from the RBS spectra and fitted numerically. At an oxygen fugacity of 10-16 bar, Fe-Mg interdiffusion coefficients in the Fs richer orthopyroxene vary between 4.10^{-22} m2/s and 2.10^{-20} m2/s for temperatures between 800 and 1000°C. Diffusion coefficients decrease by a factor of ~ 4 with decreasing oxygen fugacity between 10^{-12} and 10-16 bar at 1000 °C. Comparison of our data with other Fe-Mg diffusion data shows that these diffusion coefficients are (1) similar to Mg tracer diffusion coefficients measured in orthopyroxene at somewhat more reducing (e.g. fO2 = 10-16 to 10^{-19} bar) conditions at the same temperatures [1], (2) similar to Mg tracer diffusion in garnets measured at higher pressures of 10 kbar at an oxygen fugacity corresponding to the C-O equilibrium in graphite present systems [4], and (3) slower than Fe-Mg diffusion rates in olivine by a factor of ~10 at the same oxygen fugacities [5]. Further experiments to quantify the dependence on composition, temperature and oxygen fugacity are in progress. References: [1] Schwandt et al. (1998), Contr. Mineral. Petrol. 130: 390-396; [2] Ganguly and Tazzoli (1994), Am. Mineral. 79: 930-937; [3] Smith and Barron (1991), Am. Mineral. 76: 1950-1963; [4] Ganguly et al. (1998), Contr. Mineral. Petrol. 131: 171-180; [5] Chakraborty (1997), J. Geoph. Res. 102: 12317-12331.

CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

NASA Astrophysics Data System (ADS)

Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

2018-05-01

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.

Etude des interdiffusions en phase solide dans le contact Er/GaAs

NASA Astrophysics Data System (ADS)

Députier, S.; Guivarc'h, A.; Caulet, J.; Minier, M.; Guérin, R.

1994-05-01

Solid state interdiffusions between a thin film of erbium deposited under vacuum conditions and (001) and (111) GaAs substrates were investigated in the temperature range 350-800 ^{circ}C. Complementary analysis methods (RBS, X-ray diffraction) allow us to point out, according to annealing temperatures, successives steps of the interaction corresponding to different mixtures of phases, essentially binaries. These steps are strongly depending on the GaAs substrate orientation, especially the final step of the interdiffusions. On (001) GaAs, only two steps have been observed : no visible interaction is noticed between erbium and GaAs before 600 ^{circ}C ; the interaction begins at 600 ^{circ}C, evolves slightly and leads at 800 ^{circ}C to the nominal composition " Er{10}GaAs " which corresponds to a mixture of several phases Er5Ga3, Er and ErAs. On (111) GaAs, several steps of interaction have been found ; first of all, erbium reacts with the substrate at 400 ^{circ}C (Er5Ga3 + Er mixture), then the reaction is continuing at 600 ^{circ}C (Er5Ga3 + Er + ErAs mixture) before reaching at 800 ^{circ}C the nominal composition " Er{1,5}GaAs ", which is in fact a mixture of the three binaries ErAs + ErGa2 + Er3Ga5. It can be noticed that the 800 ^{circ}C annealing is not sufficient to reach the mixture of the phases ErAs + Ga which, according to the ternary phase diagram, should be the final stage of the interaction Er/GaAs. The analysis of the Er/GaAs interdiffusions shows that ErAs is the " key " compound around which the interaction progresses. This compound appears as an ideal candidate to realize epitaxial ErAs/GaAs heterostructures. Les interdiffusions en phase solide entre une couche mince d'erbium déposée dans des conditions d'ultra-vide et des substrats de GaAs orientés (001) et (111) ont été étudiées après des traitements thermiques d'une heure entre 350 et 800 ^{circ}C. L'utilisation de techniques complémentaires d'analyse (RBS, diffraction X) a permis de mettre en évidence, en fonction de la température de recuit, plusieurs étapes successives d'interaction correspondant à des mélanges de phases, essentiellement des binaires. Elles dépendent fortement de l'orientation du substrat de GaAs, en particulier l'étape finale des interactions. Sur GaAs (001), seules deux étapes ont été observées : avant 600 ^{circ}C, il n'y a pas d'interaction visible de l'erbium avec le substrat ; celle-ci ne s'amorce qu'à 600 ^{circ}C pour n'évoluer ensuite que faiblement et conduire, à 800 ^{circ}C, à une composition nominale " Er{10}GaAs ", mélange des phases Er5Ga3 + Er + ErAs. Sur GaAs (111), plusieurs étapes d'interaction sont observées : l'erbium réagit avec le substrat dès 400 ^{circ}C (mélange des phases Er5Ga3 + Er), puis l'interaction se poursuit à 600 ^{circ}C (mélange Er5Ga3 + Er + ErAs) avant d'atteindre à 800 ^{circ}C la composition nominale " Er{1,5}GaAs ", constituée d'un mélange de grains des trois binaires ErAs + ErGa2 + Er3Ga5. Il faut noter que le recuit à 800 ^{circ}C n'est pas suffisant pour atteindre le mélange de phases Ga + ErAs qui, selon le diagramme ternaire, devrait être le stade ultime de l'interaction Er/GaAs. L'analyse des interdiffusions Er/GaAs montre que ErAs est le composé " clé " autour duquel pivote l'interaction Er/GaAs. Ce composé apparaît comme un candidat idéal pour la réalisation d'hétérostructures épitaxiées ErAs/GaAs.

Electrical Characterization of Molecular Beam Epitaxy Grown Mercury-Cadmium Alloy Under Low Magnetic Field Strength

NASA Astrophysics Data System (ADS)

Wijewarnasuriya, P. S.

HgCdTe alloy is currently the most important semiconductor material for IR detection technology. Different growth techniques are used to produce HgCdTe, but achieving a high-quality material is still a major objective in the field. Among the growth techniques for HgCdTe, molecular beam epitaxy (MBE) is one of the most promising, mainly because of its versatility. Furthermore, the growth by MBE is carried out at a low temperature which limits interdiffusion processes. The focus of this research is the understanding of the electrical properties of HgCdTe layers grown by MBE technique. Using a model based on a single discrete acceptor level near the valence band and a corresponding fully ionized donor level, a good fit to the observed Hall data on p-type epilayers was obtained. In some samples, another acceptor level was needed. Also, analysis of R _{h} data and low temperature mobilities indicated that the p-type MBE growth layers were highly compensated. This was also confirmed by mercury saturated annealing experiments. Annealing of (111)B epilayers with Hg pressure leads us to believe that Hg vacancies are responsible for the p-type character. The findings reveal that the electrical properties differ drastically between different growth orientations, with (111)B having the highest residual doping levels for a particular Cd composition. It is concluded that MBE growth for HgCdTe is essentially a Te rich growth and our understanding is that this extra Te is responsible for the n-type character in the epilayers. A comparison between HgCdTe twinned layers and twin-free layers has shown that electrically active acceptors and high hole mobilities are associated with the presence of twins. Incorporation of several foreign elements also tried and all were found to substitute the metal sites during growth. With magnetic field studies on R_ {h}, resistivity and conductivity tensor analysis, the band structure of the HgCdTe alloy is also investigated. Junction depth and the doping profile on low energy Ar ion sputtered epilayers are investigated and they are found to behave similar to the ion implanted layers.

Reduction-oxidation Enabled Glass-ceramics to Stainless Steel Bonding Part I: screening of doping oxidants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Steve Xunhu

Lithium silicate-based glass-ceramics with high coefficients of thermal expansion, designed to form matched hermetic seals in 304L stainless steel housing, show little evidence of interfacial chemical bonding, despite extensive inter-diffusion at the glass-ceramic-stainless steel (GC-SS) interface. A series of glass-ceramic compositions modified with a variety of oxidants, AgO, FeO, NiO, PbO, SnO, CuO, CoO, MoO 3 and WO 3, are examined for the feasibility of forming bonding oxides through reduction-oxidation (redox) at the GC-SS interface. The oxidants were selected according to their Gibbs free energy to allow for oxidation of Cr/Mn/Si from stainless steel, and yet to prevent a reductionmore » of P2O5 in the glass-ceramic where the P 2O 5 is to form Li 3PO 4 nuclei for growth of high expansion crystalline SiO 2 phases. Other than the CuO and CoO modified glass-ceramics, bonding from interfacial redox reactions were not achieved in the modified glass-ceramics, either because of poor wetting on the stainless steel or a reduction of the oxidants at the surface of glass-ceramic specimens rather than the GC-SS interface.« less

Structural and kinetic studies of metal hydride hydrogen storage materials using thin film deposition and characterization techniques

NASA Astrophysics Data System (ADS)

Kelly, Stephen Thomas

Hydrogen makes an attractive energy carrier for many reasons. It is an abundant chemical fuel that can be produced from a wide variety of sources and stored for very long periods of time. When used in a fuel cell, hydrogen emits only water at the point of use, making it very attractive for mobile applications such as in an automobile. Metal hydrides are promising candidates for on-board reversible hydrogen storage in mobile applications due to their very high volumetric storage capacities---in most cases exceeding even that of liquid hydrogen. The United States Department of Energy (DOE) has set fuel system targets for an automotive hydrogen storage system, but as of yet no single material meets all the requirements. In particular, slow reaction kinetics and/or inappropriate thermodynamics plague many metal hydride hydrogen storage materials. In order to engineer a practical material that meets the DOE targets, we need a detailed understanding of the kinetic and thermodynamic properties of these materials during the phase change. In this work I employed sputter deposited thin films as a platform to study materials with highly controlled chemistry, microstructure and catalyst placement using thin film characterization techniques such as in situ x-ray diffraction (XRD) and neutron reflectivity. I observed kinetic limitations in the destabilized Mg2Si system due to the slow diffusion of the host Mg and Si atoms while forming separate MgH2 and Si phases. Conversely, I observed that the presence of Al in the Mg/Al system inhibits hydrogen diffusion while the host Mg and Al atoms interdiffuse readily, allowing the material to fall into a kinetic and/or thermodynamic trap by forming intermetallic compounds such as Mg17Al 12. By using in situ XRD to analyze epitaxial Mg films grown on (001) oriented Al2O3 substrates I observed hydride growth consistent with a model of a planar hydride layer growing into an existing metal layer. Subsequent film cycling changes the hydrogen absorption and desorption kinetics and degrades the material texture. Cycling the films to greater hydrogen loading accelerates the changes to the kinetics and material texture. In addition to in situ XRD experiments, in situ neutron reflectivity experiments on epitaxial Mg films exposed to hydrogen gas reveal details about the microstructural development of the growing hydride layer as the film absorbs and releases hydrogen. Small (10 wt%) additions of Ti to epitaxial Mg films during growth result in metastable solid solution films of Ti in Mg that deposit epitaxially on (001) Al2O3 substrates with epitaxy similar to the pure Mg films. These metastable alloy films absorb hydrogen faster than pure Mg films under identical conditions. Subsequent film cycling results in altered reaction kinetics and a transition to a different kinetic mechanism during desorption than for pure Mg films.

Microstructural development from interdiffusion and reaction between U–Mo and AA6061 alloys annealed at 600° and 550 °C

DOE PAGES

Perez, E.; Keiser, D. D.; Sohn, Y. H.

2016-05-10

The U.S. Material Management and Minimization Reactor Conversion Program is developing low enrichment fuel systems encased in Al-alloy for use in research and test reactors. Monolithic fuel plates have local regions where the Usingle bondMo fuel plate may come into contact with the Al-alloy 6061 (AA6061) cladding. This results in the development of interdiffusion zones with complex microstructures with multiple phases. In this study, the microstructural development of diffusion couples, U–7 wt%Mo, U–10 wt%Mo, and U–12 wt%Mo vs. AA6061, annealed at 600 °C for 24 h and at 550 °C for 1, 5, and 20 h, were analyzed by scanningmore » electron microscopy with x-ray energy dispersive spectroscopy. The microstructural development and kinetics were compared to diffusion couples U–Mo vs. high purity Al and binary Al–Si alloys. As a result, the diffusion couples developed complex interaction regions where phase development was influenced by the alloying additions of the AA6061.« less

Interdiffusion of NaSi—CaAl in peristerite

NASA Astrophysics Data System (ADS)

Yund, Richard A.

1986-01-01

The ‘average’ interdiffusion coefficient (bar D) for NaSi—CaAl exchange in plagioclase for the interval from An0 to An26 was estimated from experimentally determined homogenization times for peristerite exsolution lamellae. The average spacing between adjacent (unlike) lamellae is 554±77 Å. Dry heating in air at 1,100°C for 98 days produced no change in the exsolution microstructure; thus bar D(dry)<10-17 cm2/s. This limit is consistent with the recently reported ‘average’ bar D(dry) values for the Huttenlocher interval (An70 90) at this temperature. At 1.5 GPa with about 0.2 weight percent water added the ‘average’ diffusion coefficient from 1,100°C to 900°C is given by: bar D(wet)=18{-15/+108}(cm2/s) exp (-97±5 (kcal/mol)/RT), where R is the gas constant, and T is °K. This bar D(wet) at 1,100°C is more than three orders of magnitude greater than bar D(dry) for Na- and Ca-rich plagioclases.

Overlay coating degradation by simultaneous oxidation and coating/substrate interdiffusion. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Nesbitt, J. A.

1983-01-01

Degradation of NiCrAlZr overlay coatings on various NiCrAl substrates was examined after cyclic oxidation. Concentration/distance profiles were measured in the coating and substrate after various oxidation exposures at 1150 C. For each stubstrate, the Al content in the coating decreased rapidly. The concentration/distance profiles, and particularly that for Al, reflected the oxide spalling resistance of each coated substrate. A numerical model was developed to simulate diffusion associated with overlay-coating degradation by oxidation and coating/substrate interdiffusion. Input to the numerical model consisted of the Cr and Al content of the coating and substrate, ternary diffusivities, and various oxide spalling parameters. The model predicts the Cr and Al concentrations in the coating and substrate after any number of oxidation/thermal cycles. The numerical model also predicts coating failure based on the ability of the coating to supply sufficient Al to the oxide scale. The validity of the model was confirmed by comparison of the predicted and measured concentration/distance profiles. The model was subsequently used to identify the most critical system parameters affecting coating life.

Tungsten Incorporation into Gallium Oxide: Crystal Structure, Surface and Interface Chemistry, Thermal Stability and Interdiffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rubio, E. J.; Mates, T. E.; Manandhar, S.

Tungsten (W) incorporated gallium oxide (Ga2O3) (GWO) thin films were deposited by radio-frequency magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying sputtering power applied to the W-target in order to achieve variable W-content (0-12 at%) into Ga2O3 while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-deposited and annealed GWO films were evaluated as a function of W-content. The structural and chemical analyses indicate that the samples deposited without any W-incorporation are stoichiometric, nanocrystalline Ga2O3 films, which crystallize in β-phase monoclinic structure. While GWO films alsomore » crystallize in monoclinic β-Ga2O3 phase, W-incorporation induces surface amorphization as revealed by structural studies. The chemical valence state of Ga ions probed by X-ray photoelectron spectroscopic (XPS) analyses is characterized by the highest oxidation state i.e., Ga3+. No changes in Ga chemical state are noted for variable W-incorporation in the range of 0-12 at%. Rutherford backscattering spectrometry (RBS) analyses indicate the uniform distribution of W-content in the GWO films. However, XPS analyses indicate the formation of mixed valence states for W ions, which may be responsible for surface amorphization in GWO films. GWO films were stable up to 900 oC, at which point thermally induced secondary phase (W-oxide) formation was observed. A transition to mesoporous structure coupled with W interdiffusion occurs due to thermal annealing as derived from the chemical analyses at the GWO films’ surface as well as depth-profiling towards the GWO-Si interface. A model has been formulated to account for the mechanism of W-incorporation, thermal stability and interdiffusion via pore formation in GWO films.« less

Nanoscopic diffusion studies on III-V compound semiconductor structures: Experiment and theory

NASA Astrophysics Data System (ADS)

Gonzalez Debs, Mariam

The electronic structure of multilayer semiconductor heterostructures is affected by the detailed compositional profiles throughout the structure and at critical interfaces. The extent of interdiffusion across these interfaces places limits on both the processing time and temperatures for many applications based on the resultant compositional profile and associated electronic structure. Atomic and phenomenological methods were used in this work through the combination of experiment and theory to understand the nanoscopic mechanisms in complex heterostructures. Two principal studies were conducted. Tin diffusion in GaAs was studied by fitting complex experimental diffusion profiles to a phenomenological model which involved the diffusion of substitutional and interstitial dopant atoms. A methodology was developed combining both the atomistic model and the use of key features within these experimentally-obtained diffusion profiles to determine meaningful values of the transport and defect reaction rate parameters. Interdiffusion across AlSb/GaSb multi-quantum well interfaces was also studied. The chemical diffusion coefficient characterizing the AlSb/GaSb diffusion couple was quantitatively determined by fitting the observed photoluminescence (PL) peak shifts to the solution of the Schrodinger equation using a potential derived from the solution of the diffusion equation to quantify the interband transition energy shifts. First-principles calculations implementing Density Functional Theory were performed to study the thermochemistry of point defects as a function of local environment, allowing a direct comparison of interfacial and bulk diffusion phenomena within these nanoscopic structures. Significant differences were observed in the Ga and Al vacancy formation energies at the AlSb/GaSb interface when compared to bulk AlSb and GaSb with the largest change found for Al vacancies. The AlSb/GaSb structures were further studied using positron annihilation spectroscopy (PAS) to investigate the role of vacancies in the interdiffusion of Al and Ga in the superlattices. The PL and PAS experimental techniques together with the phenomenological and atomistic modeling allowed for the determination of the underlying mass transport mechanisms at the nanoscale.

Method of making silicon on insalator material using oxygen implantation

DOEpatents

Hite, Larry R.; Houston, Ted; Matloubian, Mishel

1989-01-01

The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

Barrier Coatings for Refractory Metals and Superalloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

SM Sabol; BT Randall; JD Edington

2006-02-23

In the closed working fluid loop of the proposed Prometheus space nuclear power plant (SNPP), there is the potential for reaction of core and plant structural materials with gas phase impurities and gas phase transport of interstitial elements between superalloy and refractory metal alloy components during service. Primary concerns are surface oxidation, interstitial embrittlement of refractory metals and decarburization of superalloys. In parallel with kinetic investigations, this letter evaluates the ability of potential coatings to prevent or impede communication between reactor and plant components. Key coating requirements are identified and current technology coating materials are reviewed relative to these requirements.more » Candidate coatings are identified for future evaluation based on current knowledge of design parameters and anticipated environment. Coatings were identified for superalloys and refractory metals to provide diffusion barriers to interstitial transport and act as reactive barriers to potential oxidation. Due to their high stability at low oxygen potential, alumina formers are most promising for oxidation protection given the anticipated coolant gas chemistry. A sublayer of iridium is recommended to provide inherent diffusion resistance to interstitials. Based on specific base metal selection, a thin film substrate--coating interdiffusion barrier layer may be necessary to meet mission life.« less

Enhanced interfacial thermal transport in pnictogen tellurides metallized with a lead-free solder alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Devender,; Ramanath, Ganpati, E-mail: Ramanath@rpi.edu; Lofgreen, Kelly

2015-11-15

Controlling thermal transport across metal–thermoelectric interfaces is essential for realizing high efficiency solid-state refrigeration and waste-heat harvesting power generation devices. Here, the authors report that pnictogen chalcogenides metallized with bilayers of Sn{sub 96.5}Ag{sub 3}Cu{sub 0.5} solder and Ni barrier exhibit tenfold higher interfacial thermal conductance Γ{sub c} than that obtained with In/Ni bilayer metallization. X-ray diffraction and x-ray spectroscopy indicate that reduced interdiffusion and diminution of interfacial SnTe formation due to Ni layer correlates with the higher Γ{sub c}. Finite element modeling of thermoelectric coolers metallized with Sn{sub 96.5}Ag{sub 3}Cu{sub 0.5}/Ni bilayers presages a temperature drop ΔT ∼ 22 K that is 40%more » higher than that obtained with In/Ni metallization. Our results underscore the importance of controlling chemical intermixing at solder–metal–thermoelectric interfaces to increase the effective figure of merit, and hence, the thermoelectric cooling efficiency. These findings should facilitate the design and development of lead-free metallization for pnictogen chalcogenide-based thermoelectrics.« less

Substitutional and Interstitial Diffusion in alpha2-Ti3Al(O)

NASA Technical Reports Server (NTRS)

Copland, Evan; Young, David J.; Gleeson, Brian; Jacobson, Nathan

2007-01-01

The reaction between Al2O3 and alpha2-Ti3Al was studied with a series of Al2O3/alpha2-Ti3Al multiphase diffusion couples annealed at 900, 1000 and 1100 C. The diffusion-paths were found to strongly depend on alpha2- Ti3Al(O) composition. For alloys with low oxygen concentrations the reaction involved the reduction of Al2O3, the formation of a gamma-TiAl reaction-layer and diffusion of Al and O into the alpha2-Ti3Al substrate. Measured concentration profiles across the interaction-zone showed "up-hill" diffusion of O in alpha2-Ti3Al(O) indicating a significant thermodynamic interaction between O and Al, Ti or both. Diffusion coefficients for the interstitial O in alpha2-Ti3Al(O) were determined independently from the interdiffusion of Ti and Al on the substitutional lattice. Diffusion coefficients are reported for alpha2-Ti3Al(O) as well as gamma-TiAl. Interpretation of the results were aided with the subsequent measurement of the activities of Al, Ti and O in alpha 2-Ti3Al(O) by Knudsen effusion-cell mass spectrometry.

Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact

NASA Astrophysics Data System (ADS)

Forman, Charles A.; Lee, SeungGeun; Young, Erin C.; Kearns, Jared A.; Cohen, Daniel A.; Leonard, John T.; Margalith, Tal; DenBaars, Steven P.; Nakamura, Shuji

2018-03-01

We have achieved continuous-wave (CW) operation of an optically polarized m-plane GaN-based vertical-cavity surface-emitting laser (VCSEL) with an ion implanted current aperture, a tunnel junction intracavity contact, and a dual dielectric distributed Bragg reflector design. The reported VCSEL has 2 quantum wells, with a 14 nm quantum well width, 1 nm barriers, a 5 nm electron-blocking layer, and a 23 λ total cavity thickness. The thermal performance was improved by increasing the cavity length and using Au-In solid-liquid interdiffusion bonding, which led to lasing under CW operation for over 20 min. Lasing wavelengths under pulsed operation were observed at 406 nm, 412 nm, and 419 nm. Only the latter two modes appeared under CW operation due to the redshifted gain at higher temperatures. The peak output powers for a 6 μm aperture VCSEL under CW and pulsed operation were 140 μW and 700 μW, respectively. The fundamental transverse mode was observed without the presence of filamentary lasing. The thermal impedance was estimated to be ˜1400 °C/W for a 6 μm aperture 23 λ VCSEL.

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

DOEpatents

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Adhesive flexible barrier film, method of forming same, and organic electronic device including same

DOEpatents

Blizzard, John Donald; Weidner, William Kenneth

2013-02-05

An adhesive flexible barrier film comprises a substrate and a barrier layer disposed on the substrate. The barrier layer is formed from a barrier composition comprising an organosilicon compound. The adhesive flexible barrier film also comprises an adhesive layer disposed on the barrier layer and formed from an adhesive composition. A method of forming the adhesive flexible barrier film comprises the steps of disposing the barrier composition on the substrate to form the barrier layer, disposing the adhesive composition on the barrier layer to form the adhesive layer, and curing the barrier layer and the adhesive layer. The adhesive flexible barrier film may be utilized in organic electronic devices.

Deposition and characterization of B4C/CeO2 multilayers at 6.x nm extreme ultraviolet wavelengths

NASA Astrophysics Data System (ADS)

Sertsu, M. G.; Giglia, A.; Brose, S.; Park, D.; Wang, Z. S.; Mayer, J.; Juschkin, L.; Nicolosi, P.

2016-03-01

New multilayers of boron carbide/cerium dioxide (B4C/CeO2) combination on silicon (Si) substrate are manufactured to represent reflective-optics candidates for future lithography at 6.x nm wavelength. This is one of only a few attempts to make multilayers of this kind. Combination of several innovative experiments enables detailed study of optical properties, structural properties, and interface profiles of the multilayers in order to open up a room for further optimization of the manufacturing process. The interface profile is visualized by high-angle annular dark-field imaging which provides highly sensitive contrast to atomic number. Synchrotron based at-wavelength extreme ultraviolet (EUV) reflectance measurements near the boron (B) absorption edge allow derivation of optical parameters with high sensitivity to local atom interactions. X-ray reflectivity measurements at Cu-Kalpha (8 keV ) determine the period of multilayers with high in-depth resolution. By combining these measurements and choosing robust nonlinear curve fitting algorithms, accuracy of the results has been significantly improved. It also enables a comprehensive characterization of multilayers. Interface diffusion is determined to be a major cause for the low reflectivity performance. Optical constants of B4C and CeO2 layers are derived in EUV wavelengths. Besides, optical properties and asymmetric thicknesses of inter-diffusion layers (interlayers) in EUV wavelengths near the boron edge are determined. Finally, ideal reflectivity of the B4C/CeO2 combination is calculated by using optical constants derived from the proposed measurements in order to evaluate the potentiality of the design.

Ni-Al phase transformation of dual layer coating prepared by pack cementation and electrodeposition

NASA Astrophysics Data System (ADS)

Afandi, A.; Sugiarti, E.; Ekaputra, R.; Sudiro, T.; Thosin, K. A. Z.

2018-03-01

In this work, Fe-Cr alloys were coated via Aluminum (Al) pack cementation, followed by Nickel (Ni) electrodeposition. The process of pack cementation was done with mixing powders of Al, Al203 and NH4Cl with weight percentage of 15%, 85%, and 5% respectively. To control successful Al diffusion to the substrate, pack cementation was conducted for 7 hours with two holding temperatures treatment at 400 °C for 4 hours, and 800 ° C hours for 2 hours. Subsequently, the electrodeposition of Ni was applied with the solution consisting of NiSO4, H3BO3, and NiCl2. The samples were placed in the cathode, and then dipped in the solutions, while Ni plate used as anode. Successfully the samples were coated by dual Al-Ni layers, the samples were slowly heat treated at 900 °C for 10 hours. The inter-diffusion of Al and Ni were characterized with SEM/EDX to investigate the distribution of the elements. Mechanical properties of the coated substrates were analyzed with Hardness Vickers (HV). It was found the hardness of the substrate increased significantly, from originally 255 HV to the 1177 HV after pack cementation. The hardness of the substrates has decreased to 641 HV after Ni plating, but subsequent heat treatment has been able to increase the hardness to 842 HV. This phenomenon can be correlated to the inward Al diffusion, and outward Fe, Cr diffusion. The formation of intermetallic compounds due to Al inward and Fe, Cr outward diffusion were discussed in details.

Synthesis of superconducting Nb 3Sn coatings on Nb substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barzi, E.; Franz, S.; Reginato, F.

In the present work the electrochemical and thermal syntheses of superconductive Nb 3Sn films are investigated. The Nb 3Sn phase is obtained by electrodeposition of Sn layers and Cu intermediate layers onto Nb substrates followed by high temperature diffusion in inert atmosphere. Electrodeposition was performed from aqueous solutions at current densities in the 20 to 50 mA/cm 2 range and at temperatures between 40 and 50°C. Subsequent thermal treatments were realized to obtain the Nb 3Sn superconductive phase. Glow discharge optical emission spectrometry (GDOES) demonstrated that after thermal treatment interdiffusion of Nb and Sn occurred across a thickness of aboutmore » 13 μm. Scanning Electron Microscopy (SEM) allowed accurately measuring the thickness of the Nb 3Sn phase, whose average for the various types of film samples was between 5.7 and 8.0 μm. X-ray diffraction (XRD) patterns confirmed the presence of a cubic Nb 3Sn phase (A15 structure) having (210) preferred orientation. The maximum obtained T c was 17.68 K and the B c20 ranged between 22.5 T and 23.8 T. With the procedure described in the present paper, coating complex shapes cost-effectively becomes possible, which is typical of electrochemical techniques. Furthermore, this approach can be implemented in classical wire processes such as "Jelly Roll" or "Rod in Tube", or directly used for producing superconducting surfaces. In conclusion, the potential of this method for Superconducting Radiofrequency (SRF) structures is also outlined.« less

Synthesis of superconducting Nb 3Sn coatings on Nb substrates

DOE PAGES

Barzi, E.; Franz, S.; Reginato, F.; ...

2015-12-01

In the present work the electrochemical and thermal syntheses of superconductive Nb 3Sn films are investigated. The Nb 3Sn phase is obtained by electrodeposition of Sn layers and Cu intermediate layers onto Nb substrates followed by high temperature diffusion in inert atmosphere. Electrodeposition was performed from aqueous solutions at current densities in the 20 to 50 mA/cm 2 range and at temperatures between 40 and 50°C. Subsequent thermal treatments were realized to obtain the Nb 3Sn superconductive phase. Glow discharge optical emission spectrometry (GDOES) demonstrated that after thermal treatment interdiffusion of Nb and Sn occurred across a thickness of aboutmore » 13 μm. Scanning Electron Microscopy (SEM) allowed accurately measuring the thickness of the Nb 3Sn phase, whose average for the various types of film samples was between 5.7 and 8.0 μm. X-ray diffraction (XRD) patterns confirmed the presence of a cubic Nb 3Sn phase (A15 structure) having (210) preferred orientation. The maximum obtained T c was 17.68 K and the B c20 ranged between 22.5 T and 23.8 T. With the procedure described in the present paper, coating complex shapes cost-effectively becomes possible, which is typical of electrochemical techniques. Furthermore, this approach can be implemented in classical wire processes such as "Jelly Roll" or "Rod in Tube", or directly used for producing superconducting surfaces. In conclusion, the potential of this method for Superconducting Radiofrequency (SRF) structures is also outlined.« less

Investigation of innovative silicon detector assembling solutions for hadron calorimeter modules.

NASA Astrophysics Data System (ADS)

Cai, G.; Ammannati, N.

1995-11-01

The application of large areas of silicon detector mosaics in calorimetry for high energy particles measurement in Physics has grown in the last few years and is still in progress. The high number of mosaic units in the calorimeter implies the following main requirements to be satisfied: a simple low cost for manufacturing and assembling easy mountable/dismountabic units possibility to move or change silicon detectors easily reliability of the electrical contacts between the aluminium layer on the silicon detectors surface and the PCB breaker points In order to satisfy the above requirements several assembling solutions have been investigated and tested recently, as fixed contact by using conducting epoxy-glues, mechanical-dismountable contacts of gold-plated PCB copper to the silicon detectors, and others. The results of the tests show a general degradation of the original electrical characteristics of the contacts after of varying lengths operating times. This fact, due to corrosion phenomena assisted by chemical residuals in the contact interface, causes an irreversible damage of the detectors in the long term. In addition we found a room temperature interdiffusion of gold and copper. A promising solution to these problems can be achieved by careful removal of chemical, increase of golden layer of the PCB electrical copper contacts or aluminising them by pure aluminium vapour deposition in vacuum chamber. The estimated degradation time between the PCB copper and the aluminium film is very low in this case, and the risk of diffusion in the detector aluminium film surface is low along the whole operating life of the calorimeter.

CdCl2 Passivation of Polycrystalline CdMgTe and CdZnTe Absorbers for Tandem Photovoltaic Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzger, Wyatt K; Swanson, Drew; Reich, Carey

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extendingmore » Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.« less

Back contact buffer layer for thin-film solar cells

DOEpatents

Compaan, Alvin D.; Plotnikov, Victor V.

2014-09-09

A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

Research on liquid impact forming technology of double-layered tubes

NASA Astrophysics Data System (ADS)

Sun, Changying; Liu, Jianwei; Yao, Xinqi; Huang, Beixing; Li, Yuhan

2018-03-01

A double-layered tube is widely used and developed in various fields because of its perfect comprehensive performance and design. With the advent of the era of a double-layered tube, the requirements for double layered tube forming quality, manufacturing cost and forming efficiency are getting higher, so forming methods of a double-layered tube are emerged in an endless stream, the forming methods of a double-layered tube have a great potential in the future. The liquid impact forming technology is a combination of stamping technology and hydroforming technology. Forming a double-layered tube has huge advantages in production cost, quality and efficiency.

Characterization of Magnetic Nanostructures Using Off-Axis Electron Holography

NASA Astrophysics Data System (ADS)

Zhang, Desai

This dissertation research has involved microscopic characterization of magnetic nanostructures using off-axis electron holography and Lorentz microscopy. The nanostructures investigated have included Co nanoparticles (NPs), Au/Fe/GaAs shell/core nanowires (NWs), carbon spirals with magnetic cores, magnetic nanopillars, Ni-Zn-Co spinel ferrite and CoFe/Pd multilayers. The studies have confirmed the capability of holography to describe the behavior of magnetic structures at the nanoscale. The phase changes caused by the fringing fields of chains consisting of Co NPs were measured and calculated. The difference between chains with different numbers of Co NPs followed the trend indicated by calculations. Holography studies of Au/Fe/GaAs NWs grown on (110) GaAs substrates with rotationally non-uniform coating confirmed that Fe was present in the shell and that the shell behaved as a bar magnet. No fringing field was observed from NWs with cylindrical coating grown on (111)B GaAs substrates. The most likely explanation is that magnetic fields are confined within the shells and form closed loops. The multiple-magnetic-domain structure of iron carbide cores in carbon spirals was imaged using phase maps of the fringing fields. The strength and range of this fringing field was insufficient for manipulating the carbon spirals with an external applied magnetic field. No magnetism was revealed for CoPd/Fe/CoPd magnetic nanopillars. Degaussing and MFM scans ruled out the possibility that saturated magnetization and sample preparation had degraded the anisotropy, and the magnetism, respectively. The results suggested that these nanopillars were not suitable as candidates for prototypical bit information storage devices. Observations of Ni-Zn-Co spinel ferrite thin films in plan-view geometry indicated a multigrain magnetic domain structure and the magnetic fields were oriented in-plane only with no preferred magnetization distribution. This domain structure helps explain this ferrite's high permeability at high resonance frequency, which is an unusual character. Perpendicular magnetic anisotropy (PMA) of CoFe/Pd multilayers was revealed using holography. Detailed microscopic characterization showed structural factors such as layer waviness and interdiffusion that could contribute to degradation of the PMA. However, these factors are overwhelmed by the dominant effect of the CoFe layer thickness, and can be ignored when considering magnetic domain structure.

Three dimensional interactive display

NASA Technical Reports Server (NTRS)

Vranish, John M. (Inventor)

2005-01-01

A three-dimensional (3-D) interactive display and method of forming the same, includes a transparent capaciflector (TC) camera formed on a transparent shield layer on the screen surface. A first dielectric layer is formed on the shield layer. A first wire layer is formed on the first dielectric layer. A second dielectric layer is formed on the first wire layer. A second wire layer is formed on the second dielectric layer. Wires on the first wire layer and second wire layer are grouped into groups of parallel wires with a turnaround at one end of each group and a sensor pad at the opposite end. An operational amplifier is connected to each of the sensor pads and the shield pad biases the pads and receives a signal from connected sensor pads in response to intrusion of a probe. The signal is proportional to probe location with respect to the monitor screen.

In-Situ Grown P-N Junctions in MERCURY(1-X) Cadmium(x) Telluride for IR Detectors.

NASA Astrophysics Data System (ADS)

Rao, Vithal Rajaram

In-situ grown p-n junctions in mercury cadmium telluride (Hg_{1-x}Cd _{x}Te with x between 0.2-0.3) were fabricated and characterized in this study. Fabrication of these junctions involved the growth of p-n structures at 370^circC on CdTe substrates by Organometallic Vapor Phase Epitaxy. P-type doping with arsenic was achieved by using tertiarybutylarsine as the precursor. N-type doping was obtained either with indium, using trimethylindium as the precursor or by leaving the layer undoped. These p-n structures were processed to fabricate photodiodes. Their electrical performance was evaluated and conclusions regarding current mechanisms which determine their behavior were drawn. By varying the Hg pressure between 0.07-0.13 atm, p-type doping level in the 10^{16 }/cm^3-rm2times10 ^{17}/cm^3 range was achieved. At higher values of Hg pressure, the arsenic doping level in the layer increased significantly. This is possibly due to an increase in Te vacancies, allowing arsenic to occupy more group VI sites where they behave as acceptors. The activation efficiency of arsenic in the layers was measured to be equal to 50%. A high temperature anneal at 415 ^circC for 15 minutes did not result in any increase in the activation efficiency, possibly indicating the presence of stable As-complexes in the layer. Growth of p^+n structures was carried out in a single run. The acceptor concentration in the p-type cap layer was 5-rm10times10 ^{16}/cm^3. Indium doped n-type base layers had a carrier concentration of 1- rm2times10^{16}/cm^3 , while undoped layers had a n-type background carrier concentration of 4-rm6times10^ {14}/cm^3. The cap layer was 3 μm thick with x = 0.30, while the base layer was 8mum thick with x = 0.26. Under the growth conditions, arsenic showed a diffusion coefficient of rm2times10 ^{13}cm^2/s, which was higher than the interdiffusion coefficient of the alloy junction. This resulted in placement of the p-n junction in the lower bandgap base layer, which is necessary for high quantum efficiency devices. Photodiodes showed a cutoff wavelength of 7.5 mum, which correlates with the alloy composition of the base layer. Measured R_0 A of these diodes varied between 1-100 ohm-cm ^2. In the lower R_0A diodes, reverse bias was dominated by surface currents, possibly due to degradation of the passivating layer. Diodes with higher R_0A showed under reverse bias that trap assisted tunneling current dominated their performance. The origin of these traps is process related and could correspond to the presence of inactivated arsenic close to the p-n junction. Forward bias was dominated by diffusion and recombination currents, while the presence of additional leakage currents was evident.

Effect of Annealing Processes on Cu-Zr Alloy Film for Copper Metallization

NASA Astrophysics Data System (ADS)

Wang, Ying; Li, Fu-yin; Tang, Bin-han

2017-12-01

The effect of two different annealing processes on the microstructure and barrier-forming ability of Cu-Zr alloy films has been investigated. Cu-Zr alloy films were deposited directly onto SiO2/Si substrates via direct current magnetron sputtering and subsequently annealed by the vacuum annealing process (VAP) or rapid annealing process under argon atmosphere at temperatures 350°C, 450°C, and 550°C. Then, the microstructure, interface characteristics, and electrical properties of the samples were measured. After annealing, the samples showed a preferential (111) crystal orientation, independent of the annealing process. After two annealing methods, Zr aggregated at the Cu-Zr/SiO2 interface and no serious interdiffusion occurred between Cu and Si. The leakage current measurements revealed that the samples annealed by VAP show a higher reliability. According to the results, the vacuum annealing has better barrier performance than the rapid annealing when used for the fabrication of Cu-based interconnects.

Interfacial reactions in borsic/Ti-3Al-2-1/2V composite

NASA Technical Reports Server (NTRS)

Rao, V. B.; Houska, C. R.; Unnam, J.; Brewer, W. D.; Tenney, D. R.

1979-01-01

The paper provides a detailed X-ray characterization of a borsic/Ti-3Al-2-1/2V composite, and to correlate the relative intensities of the reaction products with the mechanical properties. Based on X-ray integrated intensity data two stages of interface reactions were identified: during the first stage there is a simultaneous interdiffusion of Si, C, and Ti atoms at the filament/matrix interface resulting in the formation of Ti5Si3, TiSi and small amounts of TiSi2 and TiC. The second stage is associated with considerable TiSi2 and boride formation. It appears that the alpha-phase of Ti is more reactive in forming silicides and borides than the beta-phase. The silicide intensities and the reaction zone thicknesses are shown to be directly related to the reduction of the ultimate tensile strength by thermal degradation, and the results indicate that silicide reaction products are as detrimental to strength as the borides.

Numerical Modeling of High-Temperature Corrosion Processes

NASA Technical Reports Server (NTRS)

Nesbitt, James A.

1995-01-01

Numerical modeling of the diffusional transport associated with high-temperature corrosion processes is reviewed. These corrosion processes include external scale formation and internal subscale formation during oxidation, coating degradation by oxidation and substrate interdiffusion, carburization, sulfidation and nitridation. The studies that are reviewed cover such complexities as concentration-dependent diffusivities, cross-term effects in ternary alloys, and internal precipitation where several compounds of the same element form (e.g., carbides of Cr) or several compounds exist simultaneously (e.g., carbides containing varying amounts of Ni, Cr, Fe or Mo). In addition, the studies involve a variety of boundary conditions that vary with time and temperature. Finite-difference (F-D) techniques have been applied almost exclusively to model either the solute or corrodant transport in each of these studies. Hence, the paper first reviews the use of F-D techniques to develop solutions to the diffusion equations with various boundary conditions appropriate to high-temperature corrosion processes. The bulk of the paper then reviews various F-D modeling studies of diffusional transport associated with high-temperature corrosion.

Enhanced calculation of eigen-stress field and elastic energy in atomistic interdiffusion of alloys

NASA Astrophysics Data System (ADS)

Cecilia, José M.; Hernández-Díaz, A. M.; Castrillo, Pedro; Jiménez-Alonso, J. F.

2017-02-01

The structural evolution of alloys is affected by the elastic energy associated to eigen-stress fields. However, efficient calculations of the elastic energy in evolving geometries are actually a great challenge in promising atomistic simulation techniques such as Kinetic Monte Carlo (KMC) methods. In this paper, we report two complementary algorithms to calculate the eigen-stress field by linear superposition (a.k.a. LSA, Lineal Superposition Algorithm) and the elastic energy modification in atomistic interdiffusion of alloys (the Atom Exchange Elastic Energy Evaluation (AE4) Algorithm). LSA is shown to be appropriated for fast incremental stress calculation in highly nanostructured materials, whereas AE4 provides the required input for KMC and, additionally, it can be used to evaluate the accuracy of the eigen-stress field calculated by LSA. Consequently, they are suitable to be used on-the-fly with KMC. Both algorithms are massively parallel by their definition and thus well-suited for their parallelization on modern Graphics Processing Units (GPUs). Our computational studies confirm that we can obtain significant improvements compared to conventional Finite Element Methods, and the utilization of GPUs opens up new possibilities for the development of these methods in atomistic simulation of materials.

Reassessment of Atomic Mobilities in fcc Cu-Ag-Sn System Aiming at Establishment of an Atomic Mobility Database in Sn-Ag-Cu-In-Sb-Bi-Pb Solder Alloys

NASA Astrophysics Data System (ADS)

Xu, Huixia; Zhang, Lijun; Cheng, Kaiming; Chen, Weimin; Du, Yong

2017-04-01

To establish an accurate atomic mobility database in solder alloys, a reassessment of atomic mobilities in the fcc (face centered cubic) Cu-Ag-Sn system was performed as reported in the present work. The work entailed initial preparation of three fcc Cu-Sn diffusion couples, which were used to determine the composition-dependent interdiffusivities at 873 K, 923 K, and 973 K, to validate the literature data and provide new experimental data at low temperatures. Then, atomic mobilities in three boundary binaries, fcc Cu-Sn, fcc Ag-Sn, and fcc Cu-Ag, were updated based on the data for various experimental diffusivities obtained from the literature and the present work, together with the available thermodynamic database for solder alloys. Finally, based on the large number of interdiffusivities recently measured from the present authors, atomic mobilities in the fcc Cu-Ag-Sn ternary system were carefully evaluated. A comprehensive comparison between various calculated/model-predicted diffusion properties and the experimental data was used to validate the reliability of the obtained atomic mobilities in ternary fcc Cu-Ag-Sn alloys.

Self-diffusivity and interdiffusivity of molten aluminum-copper alloys under pressure, derived from molecular dynamics.

PubMed

Rudd, Robert E; Cabot, William H; Caspersen, Kyle J; Greenough, Jeffrey A; Richards, David F; Streitz, Frederick H; Miller, Paul L

2012-03-01

We use molecular dynamics (MD) to simulate diffusion in molten aluminum-copper (AlCu) alloys. The self-diffusivities and Maxwell-Stefan diffusivities are calculated for AlCu mixtures using the Green-Kubo formulas at temperatures from 1000 to 4000 K and pressures from 0 to 25 GPa, along with additional points at higher temperatures and pressures. The diffusivities are corrected for finite-size effects. The Maxwell-Stefan diffusivity is compared to the diffusivity calculated from the self-diffusivities using a generalization of the Darken equation. We find that the effects of cross-correlation are small. Using the calculated self-diffusivities, we have assessed whether dilute hard-sphere and dilute Lennard-Jones models apply to the molten mixture. Neither of the two dilute gas diffusivities describes the diffusivity in molten Al and Cu. We report generalized analytic models for the self-diffusivities and interdiffusivity (mutual diffusivity) that fit the MD results well. The MD-derived transport coefficients are in good agreement with the available experimental data. We also report MD calculations of the viscosity and an analytic fit to those results. The ionic thermal conductivity is discussed briefly.

Electronic structure of uranium overlayers on magnesium and aluminium

NASA Astrophysics Data System (ADS)

Gouder, T.

1997-06-01

We studied U overlayers on polycrystalline Mg and Al by X-ray and ultra-violet photoelectron spectroscopies (XPS and UPS, respectively), and compared the mode of growth and the evolution of the electronic structure as a function of coverage. The goal of this work was to detect localization, or at least correlation effects, in U overlayers and U substrate near surface alloys, which were expected to occur because of the reduced U 5f bandwidth in these systems. On Mg, U deposits as a pure overlayer without any interdiffusion, while on Al spontaneous interdiffusion takes place. The U 4f spectra of {U}/{Mg} show only weak correlation satellites. Nevertheless, the asymmetrical shape of the U 4f peak indicates 5f band narrowing. On Al, strong correlation satellites are observed in addition to plasmon loss features. It seems that U-substrate interactions promote correlation effects, while the reduced coordination in overlayers plays a less important role. UPS valence-band (VB) spectra of the two systems look remarkably similar. They do not show any correlation satellites. With decreasing overlayer thickness the 5f peak narrows, which is attributed to 5f band narrowing at the surface.

The Microstructural Evolution of Vacuum Brazed 1Cr18Ni9Ti Using Various Filler Metals

PubMed Central

Chen, Yunxia; Cui, Haichao; Lu, Binfeng; Lu, Fenggui

2017-01-01

The microstructures and weldability of a brazed joint of 1Cr18Ni9Ti austenitic stainless steel with BNi-2, BNi82CrSiBFe and BMn50NiCuCrCo filler metals in vacuum were investigated. It can be observed that an interdiffusion region existed between the filler metal and the base metal for the brazed joint of Ni-based filler metals. The width of the interdiffusion region was about 10 μm, and the microstructure of the brazed joint of BNi-2 filler metal was dense and free of obvious defects. In the case of the brazed joint of BMn50NiCuCrCo filler metal, there were pits, pores and crack defects in the brazing joint due to insufficient wettability of the filler metal. Crack defects can also be observed in the brazed joint of BNi82CrSiBFe filler metal. Compared with BMn50NiCuCrCo and BNi82CrSiBFe filler metals, BNi-2 filler metal is the best material for 1Cr18Ni9Ti austenitic stainless steel vacuum brazing because of its distinct weldability. PMID:28772745

The isothermal-oxidation behavior of several nickel-base single-crystal superalloys with and without coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goebel, M.; Rahmel, A.; Schuetze, M.

1993-04-01

Several commercial single-crystal superalloys (CMSX-2, CMSX-3, CMSX-4, CMSX-6, SRR 99) and some laboratory versions of one of them (CMSX-4) with various Y-additions were investigated concerning their oxidation resistance in air at temperatures between 800 and 1,200[degrees]C. The investigations also included two materials (CMSX-6, SRR 99) with an RT-22 coating. Weight change was recorded for times of up to 1,000 hr (in some cases up to 1,600 hr). Oxidized coatings and substrates were characterized by metallography, SEM, and microprobe analysis. Most of the alloys showed good oxidation resistance up to 1,000[degrees]C, while there was complete spalling during cooling after oxidation atmore » 1,150[degrees]C and 1,200[degrees]C for the uncoated and Y-free alloys. Coated alloys were superior, however the best behavior was shown by a laboratory version of CMSX-4 containing between 10 and 60 ppm Y. Interdiffusion at 1,000[degrees]C is tolerable for the coated alloys, but there was extremely rapid degradation of the coating by interdiffusion at 1,200[degrees]C. 20 refs., 26 figs., 6 tabs.« less

Self-diffusivity and interdiffusivity of molten aluminum-copper alloys under pressure, derived from molecular dynamics

NASA Astrophysics Data System (ADS)

Rudd, Robert E.; Cabot, William H.; Caspersen, Kyle J.; Greenough, Jeffrey A.; Richards, David F.; Streitz, Frederick H.; Miller, Paul L.

2012-03-01

We use molecular dynamics (MD) to simulate diffusion in molten aluminum-copper (AlCu) alloys. The self-diffusivities and Maxwell-Stefan diffusivities are calculated for AlCu mixtures using the Green-Kubo formulas at temperatures from 1000 to 4000 K and pressures from 0 to 25 GPa, along with additional points at higher temperatures and pressures. The diffusivities are corrected for finite-size effects. The Maxwell-Stefan diffusivity is compared to the diffusivity calculated from the self-diffusivities using a generalization of the Darken equation. We find that the effects of cross-correlation are small. Using the calculated self-diffusivities, we have assessed whether dilute hard-sphere and dilute Lennard-Jones models apply to the molten mixture. Neither of the two dilute gas diffusivities describes the diffusivity in molten Al and Cu. We report generalized analytic models for the self-diffusivities and interdiffusivity (mutual diffusivity) that fit the MD results well. The MD-derived transport coefficients are in good agreement with the available experimental data. We also report MD calculations of the viscosity and an analytic fit to those results. The ionic thermal conductivity is discussed briefly.

Nanoalloying and phase transformations during thermal treatment of physical mixtures of Pd and Cu nanoparticles

PubMed Central

Mukundan, Vineetha; Yin, Jun; Joseph, Pharrah; Luo, Jin; Shan, Shiyao; Zakharov, Dmitri N; Zhong, Chuan-Jian; Malis, Oana

2014-01-01

Nanoscale alloying and phase transformations in physical mixtures of Pd and Cu ultrafine nanoparticles are investigated in real time with in situ synchrotron-based x-ray diffraction complemented by ex situ high-resolution transmission electron microscopy. The combination of metal–support interaction and reactive/non-reactive environment was found to determine the thermal evolution and ultimate structure of this binary system. At 300 °C, the nanoparticles supported on silica and carbon black intermix to form a chemically ordered CsCl-type (B2) alloy phase. The B2 phase transforms into a disordered fcc alloy at higher temperature (> 450 °C). The alloy nanoparticles supported on silica and carbon black are homogeneous in volume, but evidence was found of Pd surface enrichment. In sharp contrast, when supported on alumina, the two metals segregated at 300 °C to produce almost pure fcc Cu and Pd phases. Upon further annealing of the mixture on alumina above 600 °C, the two metals interdiffused, forming two distinct disordered alloys of compositions 30% and 90% Pd. The annealing atmosphere also plays a major role in the structural evolution of these bimetallic nanoparticles. The nanoparticles annealed in forming gas are larger than the nanoparticles annealing in helium due to reduction of the surface oxides that promotes coalescence and sintering. PMID:27877663

Article and method of forming an article

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacy, Benjamin Paul; Kottilingam, Srikanth Chandrudu; Dutta, Sandip

Provided are an article and a method of forming an article. The method includes providing a metallic powder, heating the metallic powder to a temperature sufficient to joint at least a portion of the metallic powder to form an initial layer, sequentially forming additional layers in a build direction by providing a distributed layer of the metallic powder over the initial layer and heating the distributed layer of the metallic powder, repeating the steps of sequentially forming the additional layers in the build direction to form a portion of the article having a hollow space formed in the build direction,more » and forming an overhang feature extending into the hollow space. The article includes an article formed by the method described herein.« less

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2013-07-23

Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.

Aligned Li+ Tunnels in Core-Shell Li(NixMnyCoz)O2@LiFePO4 Enhances Its High Voltage Cycling Stability as Li-ion Battery Cathode.

PubMed

Wu, Zhongzhen; Ji, Shunping; Liu, Tongchao; Duan, Yandong; Xiao, Shu; Lin, Yuan; Xu, Kang; Pan, Feng

2016-10-12

Layered transition-metal oxides (Li[Ni x Mn y Co z ]O 2 , NMC, or NMCxyz) due to their poor stability when cycled at a high operating voltage (>4.5 V) have limited their practical applications in industry. Earlier researches have identified Mn(II)-dissolution and some parasitic reactions between NMC surface and electrolyte, especially when NMC is charged to a high potential, as primarily factors responsible for the fading. In our previous work, we have achieved a capacity of NMC active material close to theoretical value and optimized its cycling performance by a depolarized carbon nanotubes (CNTs) network and an unique "pre-lithiation process" that generates an in situ organic coating (∼40 nm) to prevent Mn(II) dissolution and minimize the parasitic reactions. Unfortunately, this organic coating is not durable enough during a long-term cycling when the cathode operates at a high potential (>4.5 V). This work attempts to improve the surface protection of the NMC532 particles by applying an active inorganic coating consisting of nanosized- and crystal-orientated LiFePO 4 (LFP) (about 50 nm, exposed (010) face) to generate a core-shell nanostructure of Li(Ni x Mn y Co z )O 2 @LiFePO 4 . Transmission electron microscopy (TEM) and etching X-ray photoelectron spectroscopy have confirmed an intimate contact coating (about 50 nm) between the original structure of NMC and LFP single-particle with atomic interdiffusion at the core-shell interface, and an array of interconnected aligned Li + tunnels are observed at the interface by cross-sectional high-resolution TEM, which were formed by ball-milling and then strictly controlling the temperature below 100 °C. Batteries based on this modified NMC cathode material show a high reversible capacity when cycled between 3.0 and 4.6 V during a long-term cycling.

Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers.

PubMed

Norris, D J; Myronov, M; Leadley, D R; Walther, T

2017-12-01

We compare transmission electron microscopical analyses of the onset of islanding in the germanium-on-silicon (Ge/Si) system for three different Si substrate orientations: (001), (11¯0) and (11¯1)Si. The Ge was deposited by reduced pressure chemical vapour deposition and forms islands on the surface of all Si wafers; however, the morphology (aspect ratio) of the deposited islands is different for each type of wafer. Moreover, the mechanism for strain relaxation is different for each type of wafer owing to the different orientation of the (111) slip planes with the growth surface. Ge grown on (001)Si is initially pseudomorphically strained, yielding small, almost symmetrical islands of high aspect ratio (clusters or domes) on top interdiffused SiGe pedestals, without any evidence of plastic relaxation by dislocations, which would nucleate later-on when the islands might have coalesced and then the Matthews-Blakeslee limit is reached. For (11¯0)Si, islands are flatter and more asymmetric, and this is correlated with plastic relaxation of some islands by dislocations. In the case of growth on (11¯1)Si wafers, there is evidence of immediate strain relaxation taking place by numerous dislocations and also twinning. In the case of untwined film/substrate interfaces, Burgers circuits drawn around certain (amorphous-like) regions show a nonclosure with an edge-type a/4[1¯12] Burgers vector component visible in projection along [110]. Microtwins of multiples of half unit cells in thickness have been observed which occur at the growth interface between the Si(11¯1) buffer layer and the overlying Ge material. Models of the growth mechanisms to explain the interfacial configurations of each type of wafer are suggested. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Plasmonic-Enhanced Catalysis

DTIC Science & Technology

2012-05-30

shifts that cannot be merely explained hydride formation. These unexpected LSPR shifts may be explained by Au/Pd interdiffusion or silicide formation...photocurrent on a chemically modified gold thin film of metal -semiconductor (TiO2) Schottky diodes. • Intrinsic correlation between the hot electron flow...reaction to study catalyst nanoparticles at the single particle level. As hydrogen gas dissociates and intercalates into Pd, Pd changes from a metal to

Measurement of the diffusion coefficient of acetone in succinonitrile at its melting point

NASA Technical Reports Server (NTRS)

Chopra, M. A.; Glicksman, M. E.; Singh, N. B.

1988-01-01

The diffusion coefficient of acetone in liquid succinonitrile at 331.1 K was determined using the method of McBain and Dawson (1935). Only dilute mixtures of SCN-acetone were studied. The interdiffusion constant was determined to be 0.0000127 sq cm/s and was essentially independent of the acetone concentration over the range investigated (0.5 to 18 mol pct acetone).

Method of forming a multiple layer dielectric and a hot film sensor therewith

NASA Technical Reports Server (NTRS)

Hopson, Purnell, Jr. (Inventor); Tran, Sang Q. (Inventor)

1990-01-01

The invention is a method of forming a multiple layer dielectric for use in a hot-film laminar separation sensor. The multiple layer dielectric substrate is formed by depositing a first layer of a thermoelastic polymer such as on an electrically conductive substrate such as the metal surface of a model to be tested under cryogenic conditions and high Reynolds numbers. Next, a second dielectric layer of fused silica is formed on the first dielectric layer of thermoplastic polymer. A resistive metal film is deposited on selected areas of the multiple layer dielectric substrate to form one or more hot-film sensor elements to which aluminum electrical circuits deposited upon the multiple layered dielectric substrate are connected.

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Photovoltaic cell module and method of forming

DOEpatents

Howell, Malinda; Juen, Donnie; Ketola, Barry; Tomalia, Mary Kay

2017-12-12

A photovoltaic cell module, a photovoltaic array including at least two modules, and a method of forming the module are provided. The module includes a first outermost layer and a photovoltaic cell disposed on the first outermost layer. The module also includes a second outermost layer disposed on the photovoltaic cell and sandwiching the photovoltaic cell between the second outermost layer and the first outermost layer. The method of forming the module includes the steps of disposing the photovoltaic cell on the first outermost layer, disposing a silicone composition on the photovoltaic cell, and compressing the first outermost layer, the photovoltaic cell, and the second layer to form the photovoltaic cell module.

Method of forming an HTS article

DOEpatents

Bhattacharya, Raghu N.; Zhang, Xun; Selvamanickam, Venkat

2014-08-19

A method of forming a superconducting article includes providing a substrate tape, forming a superconducting layer overlying the substrate tape, and depositing a capping layer overlying the superconducting layer. The capping layer includes a noble metal and has a thickness not greater than about 1.0 micron. The method further includes electrodepositing a stabilizer layer overlying the capping layer using a solution that is non-reactive to the superconducting layer. The superconducting layer has an as-formed critical current I.sub.C(AF) and a post-stabilized critical current I.sub.C(PS). The I.sub.C(PS) is at least about 95% of the I.sub.C(AF).

Microstructure and mechanical behavior of metallic glass fiber-reinforced Al alloy matrix composites

PubMed Central

Wang, Z.; Georgarakis, K.; Nakayama, K. S.; Li, Y.; Tsarkov, A. A.; Xie, G.; Dudina, D.; Louzguine-Luzgin, D. V.; Yavari, A. R.

2016-01-01

Metallic glass-reinforced metal matrix composites are an emerging class of composite materials. The metallic nature and the high mechanical strength of the reinforcing phase offers unique possibilities for improving the engineering performance of composites. Understanding the structure at the amorphous/crystalline interfaces and the deformation behavior of these composites is of vital importance for their further development and potential application. In the present work, Zr-based metallic glass fibers have been introduced in Al7075 alloy (Al-Zn-Mg-Cu) matrices using spark plasma sintering (SPS) producing composites with low porosity. The addition of metallic glass reinforcements in the Al-based matrix significantly improves the mechanical behavior of the composites in compression. High-resolution TEM observations at the interface reveal the formation of a thin interdiffusion layer able to provide good bonding between the reinforcing phase and the Al-based matrix. The deformation behavior of the composites was studied, indicating that local plastic deformation occurred in the matrix near the glassy reinforcements followed by the initiation and propagation of cracks mainly through the matrix. The reinforcing phase is seen to inhibit the plastic deformation and retard the crack propagation. The findings offer new insights into the mechanical behavior of metal matrix composites reinforced with metallic glasses. PMID:27067824

Nanoporous Au: An experimental study on the porosity of dealloyed AuAg leafs

NASA Astrophysics Data System (ADS)

Grillo, R.; Torrisi, V.; Ruffino, F.

2016-12-01

We present a study on the fraction of porosity for dealloyed nanoporous Au leafs. Nanoporous Au is attracting great scientific interest due to its peculiar plasmonic properties and the high exposed surface (∼10 m2/g). As examples, it was used in prototypes of chemical and biological devices. However, the maximization of the devices sensitivity is subjected to the maximization of the exposed surface by the nanoporous Au, i. e. maximization of the porosity fraction. So, we report on the analyses of the porosity fraction in nanoporous Au leafs as a function of the fabrication process parameters. We dealloyed 60 μm-thick Au23Ag77 at.% leafs and we show that: a) for dealloying time till to 6 h, only a 450 nm-thick surface layer of the leafs assumes a nanoporous structure with a porosity fraction of 32%. For a dealloying time of 20 h the leafs result fragmented in small black pieces with a porosity fraction increased to 60%. b) After 600 °C-30 minutes annealing of the previous samples, the nanopores disappear due to the Au/residual Ag inter-diffusion. c) After a second dealloying process on the previously annealed samples, the surface nanoporous structure is, again, obtained with the porosity fraction increased to 50%.

Spin-orbit interaction and Kondo scattering at the PrAlO3/SrTiO3 interface: effects of oxygen content

NASA Astrophysics Data System (ADS)

Mozaffari, Shirin; Guchhait, Samaresh; Markert, John T.

2017-10-01

We report the effects of oxygen pressure during growth (PO2 ) on the electronic and magnetic properties of PrAlO3 films grown on TiO2 -terminated SrTiO3 substrates. Resistivity measurements show an increase in the sheet resistance as PO2 is increased. The saturation of the sheet resistance down to 0.3 K is consistent with Kondo theory for PO2 ≥slant 10-5 torr. Resistivity data fits indicate Kondo temperatures of 16-18 K. For the 10-4 sample, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields due to the Kondo effect. Analysis of the MR data permitted the extraction of the SO interaction critical field for the PO2=10-5 torr interface ( H_SO=1.25 T). We observed high positive MR for the least oxygenated sample, where a fraction of the n-type carriers are derived from oxygen vacancies and possible cation interdiffusion; for this 6×10-6 torr sample, Hall effect data indicate a thick conducting layer. Its extremely high MR (˜400% ) is attributed to classical behavior due to a distribution of mobilities.

Acoustic backing in 3-D integration of CMUT with front-end electronics.

PubMed

Berg, Sigrid; Rønnekleiv, Arne

2012-07-01

Capacitive micromachined ultrasonic transducers (CMUTs) have shown promising qualities for medical imaging. However, there are still some problems to be investigated, and some challenges to overcome. Acoustic backing is necessary to prevent SAWs excited in the surface of the silicon substrate from affecting the transmit pattern from the array. In addition, echoes resulting from bulk waves in the substrate must be removed. There is growing interest in integrating electronic circuits to do some of the beamforming directly below the transducer array. This may be easier to achieve for CMUTs than for traditional piezoelectric transducers. We will present simulations showing that the thickness of the silicon substrate and thicknesses and acoustic properties of the bonding material must be considered, especially when designing highfrequency transducers. Through simulations, we compare the acoustic properties of 3-D stacks bonded with three different bonding techniques; solid-liquid interdiffusion (SLID) bonding, direct fusion bonding, and anisotropic conductive adhesives (ACA). We look at a CMUT array with a center frequency of 30 MHz and three silicon wafers underneath, having a total silicon thickness of 100 μm. We find that fusion bonding is most beneficial if we want to prevent surface waves from damaging the array response, but SLID and ACA are also promising if bonding layer thicknesses can be reduced.

Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor

DOEpatents

Dhere, Neelkanth G.; Kadam, Ankur A.

2009-12-15

A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.

Underground waste barrier structure

DOEpatents

Saha, Anuj J.; Grant, David C.

1988-01-01

Disclosed is an underground waste barrier structure that consists of waste material, a first container formed of activated carbonaceous material enclosing the waste material, a second container formed of zeolite enclosing the first container, and clay covering the second container. The underground waste barrier structure is constructed by forming a recessed area within the earth, lining the recessed area with a layer of clay, lining the clay with a layer of zeolite, lining the zeolite with a layer of activated carbonaceous material, placing the waste material within the lined recessed area, forming a ceiling over the waste material of a layer of activated carbonaceous material, a layer of zeolite, and a layer of clay, the layers in the ceiling cojoining with the respective layers forming the walls of the structure, and finally, covering the ceiling with earth.

Multilayered thermal insulation formed of zirconia bonded layers of zirconia fibers and metal oxide fibers and method for making same

DOEpatents

Wrenn, Jr., George E.; Holcombe, Jr., Cressie E.

1988-01-01

A multilayered thermal insulating composite is formed of a first layer of zirconia-bonded zirconia fibers for utilization near the hot phase or surface of a furnace or the like. A second layer of zirconia-bonded metal oxide fibers is attached to the zirconia fiber layer by a transition layer formed of intermingled zirconia fibers and metal oxide fibers. The thermal insulation is fabricated by vacuum molding with the layers being sequentially applied from aqueous solutions containing the fibers to a configured mandrel. A portion of the solution containing the fibers forming the first layer is intermixed with the solution containing the fibers of the second layer for forming the layer of mixed fibers. The two layers of fibers joined together by the transition layer are saturated with a solution of zirconium oxynitrate which provides a zirconia matrix for the composite when the fibers are sintered together at their nexi.

Multilayered thermal insulation formed of zirconia bonded layers of zirconia fibers and metal oxide fibers and method for making same

DOEpatents

Wrenn, G.E. Jr.; Holcombe, C.E. Jr.

1988-09-13

A multilayered thermal insulating composite is formed of a first layer of zirconia-bonded zirconia fibers for utilization near the hot phase or surface of a furnace or the like. A second layer of zirconia-bonded metal oxide fibers is attached to the zirconia fiber layer by a transition layer formed of intermingled zirconia fibers and metal oxide fibers. The thermal insulation is fabricated by vacuum molding with the layers being sequentially applied from aqueous solutions containing the fibers to a configured mandrel. A portion of the solution containing the fibers forming the first layer is intermixed with the solution containing the fibers of the second layer for forming the layer of mixed fibers. The two layers of fibers joined together by the transition layer are saturated with a solution of zirconium oxynitrate which provides a zirconia matrix for the composite when the fibers are sintered together at their nexi.

EUV multilayer mirrors with enhanced stability

NASA Astrophysics Data System (ADS)

Benoit, Nicolas; Yulin, Sergiy; Feigl, Torsten; Kaiser, Norbert

2006-08-01

The application of multilayer optics in EUV lithography requires not only the highest possible normal-incidence reflectivity but also a long-term thermal and radiation stability at operating temperatures. This requirement is most important in the case of the collector mirror of the illumination system close to the EUV source where a short-time decrease in reflectivity is most likely. Mo/Si multilayer mirrors, designed for high normal reflectivity at the wavelength of 13.5 nm and deposited by dc magnetron sputtering, were directly exposed to EUV radiation without mitigation system. They presented a loss of reflectivity of more than 18% after only 8 hours of irradiation by a Xe-discharge source. Another problem of Mo/Si multilayers is the instability of reflectivity and peak wavelength under high heat load. It becomes especially critical at temperatures above 200°C, where interdiffusion between the molybdenum and the silicon layers is observed. The development of high-temperature multilayers was focused on two alternative Si-based systems: MoSi II/Si and interface engineered Mo/C/Si/C multilayer mirrors. The multilayer designs as well as the deposition parameters of all systems were optimized in terms of high peak reflectivity (>= 60 %) at a wavelength of 13.5 nm and high thermal stability. Small thermally induced changes of the MoSi II/Si multilayer properties were found but they were independent of the annealing time at all temperatures examined. A wavelength shift of -1.7% and a reflectivity drop of 1.0% have been found after annealing at 500°C for 100 hours. The total degradation of optical properties above 650°C can be explained by a recrystallization process of MoSi II layers.

Low-temperature lithium diffusion in simulated high-level boroaluminosilicate nuclear waste glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neeway, James J.; Kerisit, Sebastien N.; Gin, Stephane

2014-12-01

Ion exchange is recognized as an integral, if underrepresented, mechanism influencing glass corrosion. However, due to the formation of various alteration layers in the presence of water, it is difficult to conclusively deconvolute the mechanisms of ion exchange from other processes occurring simultaneously during corrosion. In this work, an operationally inert non-aqueous solution was used as an alkali source material to isolate ion exchange and study the solid-state diffusion of lithium. Specifically, the experiments involved contacting glass coupons relevant to the immobilization of high-level nuclear waste, SON68 and CJ-6, which contained Li in natural isotope abundance, with a non-aqueous solutionmore » of 6LiCl dissolved in dimethyl sulfoxide at 90 °C for various time periods. The depth profiles of major elements in the glass coupons were measured using time-of-flight secondary ion mass spectrometry (ToF-SIMS). Lithium interdiffusion coefficients, D Li, were then calculated based on the measured depth profiles. The results indicate that the penetration of 6Li is rapid in both glasses with the simplified CJ-6 glass (D 6Li ≈ 4.0-8.0 × 10 -21 m 2/s) exhibiting faster exchange than the more complex SON68 glass (D Li ≈ 2.0-4.0 × 10 -21 m 2/s). Additionally, sodium ions present in the glass were observed to participate in ion exchange reactions; however, different diffusion coefficients were necessary to fit the diffusion profiles of the two alkali ions. Implications of the diffusion coefficients obtained in the absence of alteration layers to the long-term performance of nuclear waste glasses in a geological repository system are also discussed.« less

Understanding the mechanisms of Si-K-Ca glass alteration using silicon isotopes

NASA Astrophysics Data System (ADS)

Verney-Carron, Aurélie; Sessegolo, Loryelle; Saheb, Mandana; Valle, Nathalie; Ausset, Patrick; Losno, Rémi; Mangin, Denis; Lombardo, Tiziana; Chabas, Anne; Loisel, Claudine

2017-04-01

It is important to understand glass alteration mechanisms and to determine their associated kinetics in order to develop models able to predict the alteration of nuclear, basaltic or archaeological glasses. Recent studies revealed that the respective contributions of diffusion, dissolution, condensation and precipitation processes in alteration are still a matter for debate. In this work, the alteration of a medieval-type glass (Si-K-Ca) was investigated as it presents a specific composition (without B and with low Al). Experiments were performed using a dynamic device, at 30 °C, at pH 8 and 9 and during 1 month in order to simulate alteration in contact with water (rainfall or condensation). The solution was doped in 29Si to discriminate between the silicon from glass (mainly 28Si) and from solution. The results showed that the external region of the alteration layer is devoid of modifier cations (K, Ca) and presents a 29Si/28Si ratio close to the solution one. This excludes that the alteration layer is a glass skeleton and highlights a progressive hydrolysis/condensation process, even if non-hydrolyzed silica tetrahedra could remain when the Si isotopic equilibrium is not reached. The internal zone appears to be gradually depleted in modifier cations and partly enriched in 29Si, but the thickness of this zone is overestimated using SEM-EDS and SIMS techniques. Even if in these experiments the dissolution mechanism is favored, the contribution of interdiffusion cannot be neglected to explain the weathering of ancient stained glassed windows in the atmosphere. The respective contribution of diffusion and dissolution are also discussed as a function of glass composition and surface texture, as well as of experimental conditions (alkaline pH, renewal of the solution).

Solar cell modules with improved backskin and methods for forming same

DOEpatents

Hanoka, Jack I.

1998-04-21

A laminated solar cell module with a backskin layer that reduces the materials and labor required during the manufacturing process. The solar cell module includes a rigid front support layer formed of light transmitting material having first and second surfaces. A transparent encapsulant layer has a first surface disposed adjacent the second surface of the front support layer. A plurality of interconnected solar cells have a first surface disposed adjacent a second surface of the transparent encapsulant layer. The backskin layer is formed of a thermoplastic olefin, which includes first ionomer, a second ionomer, glass fiber, and carbon black. A first surface of the backskin layer is disposed adjacent a second surface of the interconnected solar cells. The transparent encapsulant layer and the backskin layer, in combination, encapsulate the interconnected solar cells. An end portion of the backskin layer can be wrapped around the edge of the module for contacting the first surface of the front support layer to form an edge seal. A laminated solar cell module with a backskin layer that reduces the materials and labor required during the manufacturing process. The solar cell module includes a rigid front support layer formed of light transmitting material having first and second surfaces. A transparent encapsulant layer has a first surface disposed adjacent the second surface of the front support layer. A plurality of interconnected solar cells have a first surface disposed adjacent a second surface of the transparent encapsulant layer. The backskin layer is formed of a thermoplastic olefin, which includes first ionomer, a second ionomer, glass fiber, and carbon black. A first surface of the backskin layer is disposed adjacent a second surface of the interconnected solar cells. The transparent encapsulant layer and the backskin layer, in combination, encapsulate the interconnected solar cells. An end portion of the backskin layer can be wrapped around the edge of the module for contacting the first surface of the front support layer to form an edge seal.

Multi-layer coatings for bipolar rechargeable batteries with enhanced terminal voltage

DOEpatents

Farmer, Joseph C.; Kaschmitter, James; Pierce, Steve

2017-06-06

A method for producing a multi-layer bipolar coated cell according to one embodiment includes applying a first active cathode material above a substrate to form a first cathode; applying a first solid-phase ionically-conductive electrolyte material above the first cathode to form a first electrode separation layer; applying a first active anode material above the first electrode separation layer to form a first anode; applying an electrically conductive barrier layer above the first anode; applying a second active cathode material above the anode material to form a second cathode; applying a second solid-phase ionically-conductive electrolyte material above the second cathode to form a second electrode separation layer; applying a second active anode material above the second electrode separation layer to form a second anode; and applying a metal material above the second anode to form a metal coating section. In another embodiment, the anode is formed prior to the cathode. Cells are also disclosed.

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

PLZT capacitor on glass substrate

DOEpatents

Fairchild, Manuel Ray; Taylor, Ralph S.; Berlin, Carl W.; Wong, Celine Wk; Ma, Beihai; Balachandran, Uthamalingam

2016-03-29

A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

PLZT capacitor on glass substrate

DOEpatents

Fairchild, M. Ray; Taylor, Ralph S.; Berlin, Carl W.; Wong, Celine W. K.; Ma, Beihai; Balachandran, Uthamalingam

2016-01-05

A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

Viscosity and viscoelasticity of two-phase systems having diffuse interfaces

NASA Technical Reports Server (NTRS)

Hopper, R. W.

1976-01-01

The equilibrium stability criterion for diffuse interfaces in a two-component solution with a miscibility gap requires that the interdiffusion flux vanish. If the system is continuously deformed, convective fluxes disrupt the equilibrium in the interface regions and induce a counter diffusive flux, which is dissipative and contributes to the apparent viscosity of the mixture. Chemical free energy is recoverably stored, causing viscoelastic phenomena. Both effects are significant.

Void Formation during Diffusion - Two-Dimensional Approach

NASA Astrophysics Data System (ADS)

Wierzba, Bartek

2016-06-01

The final set of equations defining the interdiffusion process in solid state is presented. The model is supplemented by vacancy evolution equation. The competition between the Kirkendall shift, backstress effect and vacancy migration is considered. The proper diffusion flux based on the Nernst-Planck formula is proposed. As a result, the comparison of the experimental and calculated evolution of the void formation in the Fe-Pd diffusion couple is shown.

TEM and TED investigation of Ag/PbTe thin film bilayers.

NASA Astrophysics Data System (ADS)

Mandrino, Đorđe; Marinković, V.

Morphology and phase structure of Ag/PbTe thin film bilayers were investigated. This system was of particular interest because of interfacial reaction observed previously in an analogous Ag/SnTe system. Reaction products due to the interdiffusion of Ag with the substrate were determined as well as their orientations. They were discussed in view of the reaction products' structural relations to the PbTe.

Ab Initio Study of the Atomic Level Structure of the Rutile TiO2(110)-Titanium Nitride (TiN) Interface.

PubMed

Gutiérrez Moreno, José Julio; Nolan, Michael

2017-11-01

Titanium nitride (TiN) is widely used in industry as a protective coating due to its hardness and resistance to corrosion and can spontaneously form a thin oxide layer when it is exposed to air, which could modify the properties of the coating. With limited understanding of the TiO 2 -TiN interfacial system at present, this work aims to describe the structural and electronic properties of oxidized TiN based on a density functional theory (DFT) study of the rutile TiO 2 (110)-TiN(100) interface model system, also including Hubbard +U correction on Ti 3d states. The small lattice mismatch gives a good stability to the TiO 2 -TiN interface after depositing the oxide onto TiN through the formation of interfacial Ti-O bonds. Our DFT+U study shows the presence of Ti 3+ cations in the TiO 2 region, which are preferentially located next to the interface region as well as the rotation of the rutile TiO 2 octahedra in the interface structure. The DFT+U TiO 2 electronic density of states (EDOS) shows localized Ti 3+ defect states forming in the midgap between the top edge of the valence and the bottom of the conduction band. We increase the complexity of our models by the introduction of nonstoichiometric compositions. Although the vacancy formation energies for Ti in TiN (E vac (Ti) ≥ 4.03 eV) or O in the oxide (E vac (O) ≥ 3.40 eV) are quite high relative to perfect TiO 2 -TiN, defects are known to form during the oxide growth and can therefore be present after TiO 2 formation. Our results show that a structure with exchanged O and N can lie 0.82 eV higher in energy than the perfect system, suggesting the stability of structures with interdiffused O and N anions at ambient conditions. The presence of N in TiO 2 introduces N 2p states localized between the top edge of the O 2p valence states and the midgap Ti 3+ 3d states, thus reducing the band gap in the TiO 2 region for the exchanged O/N interface EDOS. The outcomes of these simulations give us a most comprehensive insight on the atomic level structure and the electronic properties of oxidized TiN surfaces.

Improvement of band gap profile in Cu(InGa)Se{sub 2} solar cells through rapid thermal annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, D.S.; College of Mathematics and Physics, Shanghai University of Electric Power, Shanghai, 200090; Yang, J.

Highlights: • Proper RTA treatment can effectively optimize band gap profile to more expected level. • Inter-diffusion of atoms account for the improvement of the graded band gap profile. • The variation of the band gap profile created an absolute gain in the efficiency by 1.22%. - Abstract: In the paper, the effect of rapid thermal annealing on non-optimal double-graded band gap profiles was investigated by using X-ray photoelectron spectroscopy and capacitance–voltage measurement techniques. Experimental results revealed that proper rapid thermal annealing treatment can effectively improve band gap profile to more optimal level. The annealing treatment could not only reducemore » the values of front band gap and minimum band gap, but also shift the position of the minimum band gap toward front electrode and enter into space charge region. In addition, the thickness of Cu(InGa)Se{sub 2} thin film decreased by 25 nm after rapid thermal annealing treatment. All of these modifications were attributed to the inter-diffusion of atoms during thermal treatment process. Simultaneously, the variation of the band gap profile created an absolute gain in the efficiency by 1.22%, short-circuit current density by 2.16 mA/cm{sup 2} and filled factor by 3.57%.« less

High-performance electrodes for reduced temperature solid oxide fuel cells with doped lanthanum gallate electrolyte. II. La(Sr)CoO 3 cathode

NASA Astrophysics Data System (ADS)

Inagaki, Toru; Miura, Kazuhiro; Yoshida, Hiroyuki; Maric, Radenka; Ohara, Satoshi; Zhang, Xinge; Mukai, Kazuo; Fukui, Takehisa

The reduced temperature solid oxide fuel cell (SOFC) with 0.5 mm thick La 0.9Sr 0.1Ga 0.8Mg 0.2O 3- α (LSGM) electrolyte, La 0.6Sr 0.4CoO 3- δ (LSCo) cathode, and Ni-(CeO 2) 0.8(SmO 1.5) 0.2 (SDC) cermet anode showed an excellent initial performance, and high maximum power density, 0.47 W/cm 2, at 800°C. The results were comparable to those for the conventional SOFC with yttria-stabilized zirconia (YSZ) electrolyte, La(Sr)MnO 3-YSZ cathode and Ni-YSZ cermet anode at 1000°C. Using an LSCo powder prepared by spray pyrolysis, and selecting appropriate sintering temperatures, the lowest cathodic polarization of about 25 mV at 300 mA/cm 2 was measured for a cathode prepared by sintering at 1000°C. Life time cell test results, however, showed that the polarization of the LSCo cathode increased with operating time. From EPMA results, this behavior was considered to be related to the interdiffusion of the elements at the cathode/electrolyte interface. Calcination of LSCo powder could be a possible way to suppress this interdiffusion at the interface.

Interdiffusion and stress development in single-crystalline Pd/Ag bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noah, Martin A., E-mail: m.noah@is.mpg.de; Flötotto, David; Wang, Zumin

Interdiffusion and stress evolution in single-crystalline Pd/single-crystalline Ag thin films were investigated by Auger electron spectroscopy sputter-depth profiling and in-situ X-ray diffraction, respectively. The concentration-dependent chemical diffusion coefficient, as well as the impurity diffusion coefficient of Ag in Pd could be determined in the low temperature range of 356 °C–455 °C. As a consequence of the similarity of the strong concentration-dependences of the intrinsic diffusion coefficients, the chemical diffusion coefficient varies only over three orders of magnitude over the whole composition range, despite the large difference of six orders of magnitude of the self-diffusion coefficients of Ag in Ag and Pd inmore » Pd. It is shown that the Darken-Manning treatment should be adopted for interpretation of the experimental data; the Nernst-Planck treatment yielded physically unreasonable results. Apart from the development of compressive thermal stress, the development of stress in both sublayers separately could be ascribed to compositional stress (tensile in the Ag sublayer and compressive in the Pd sublayer) and dominant relaxation processes, especially in the Ag sublayer. The effect of these internal stresses on the values determined for the diffusion coefficients is shown to be negligible.« less

Transient liquid phase ceramic bonding

DOEpatents

Glaeser, Andreas M.

1994-01-01

Ceramics are joined to themselves or to metals using a transient liquid phase method employing three layers, one of which is a refractory metal, ceramic or alloy. The refractory layer is placed between two metal layers, each of which has a lower melting point than the refractory layer. The three layers are pressed between the two articles to be bonded to form an assembly. The assembly is heated to a bonding temperature at which the refractory layer remains solid, but the two metal layers melt to form a liquid. The refractory layer reacts with the surrounding liquid and a single solid bonding layer is eventually formed. The layers may be designed to react completely with each other and form refractory intermetallic bonding layers. Impurities incorporated into the refractory metal may react with the metal layers to form refractory compounds. Another method for joining ceramic articles employs a ceramic interlayer sandwiched between two metal layers. In alternative embodiments, the metal layers may include sublayers. A method is also provided for joining two ceramic articles using a single interlayer. An alternate bonding method provides a refractory-metal oxide interlayer placed adjacent to a strong oxide former. Aluminum or aluminum alloys are joined together using metal interlayers.

Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

DOEpatents

Yang, Liyou

1993-10-26

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters

DOEpatents

Wanlass, Mark W.

2001-01-01

A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP.sub.1-y As.sub.y n-layer formed with an n-type dopant, an Ga.sub.x In.sub.1-x As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP.sub.1-y As.sub.y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.

Resistive heater geometry and regeneration method for a diesel particulate filter

DOEpatents

Phelps, Amanda [Malibu, CA; Kirby, Kevin W [Calabasas Hills, CA; Gregoir, Daniel J [Thousand Oaks, CA

2011-10-25

One embodiment of the invention includes a diesel particulate filter comprising a first face and a second face; a bottom electrode layer formed over the first face of the diesel particulate filter; a middle resistive layer formed over a portion of the bottom electrode layer; and a top electrode layer formed over a portion of the middle resistive layer.

Ordered arrays of Au catalysts by FIB assisted heterogeneous dewetting.

PubMed

Benkouider, A; Ronda, A; David, T; Favre, L; Abbarchi, M; Naffouti, M; Osmond, J; Delobbe, A; Sudraud, P; Berbezier, I

2015-12-18

Synthesizing Au0.8Si0.2 nanocatalysts that are homogeneous in size and have controlled position is becoming a challenging and crucial prequisite for the fabrication of ordered semiconductor nanowires. In this study, Au0.8Si0.2 nanocatalysts are synthesized via dewetting of Au layers on Si(111) during thermal annealing in an ultra-high vacuum. In the first part of the paper, the mechanism of homogeneous dewetting is analyzed as a function of the Au-deposited thickness (h Au). We distinguish three different dewetting regimes: (I) for a low thickness ([Formula: see text]), a submonolyer coverage of Au is stabilized and there is no dewetting. (II) For an intermediate thickness ([Formula: see text]), there is both dewetting and Au0.8Si0.2 phase formation. The size and density of the Au0.8Si0.2 clusters are directly related to h Au. When cooling down to room temperature, the clusters decompose and reject the Si at the Au/Si substrate interface. (III) For a large thickness ([Formula: see text]), only dewetting takes place, without forming AuSi clusters. In this regime, the dewetting is kinetically controlled by the self-diffusion of Au (activation energy ∼0.43 eV) without evidence of an Si-alloying effect. As a practical consequence, when relying solely on the homogeneous dewetting of Au/Si(111) to form the Au0.8Si0.2 catalysts (without a supply of Si atoms from vapor), regime II should be used to obtain good size and density control. In the second part of the paper, a process for ordering the catalysts using focused ion beam-(FIB) assisted dewetting (heterogeneous dewetting) is developed. We show that no matter what the FIB milling conditions and the Au nominal thickness are, dewetting is promoted by ion beam irradiation and is accompanied by the formation of Au0.8Si0.2 droplets. The droplets preferentially form on the patterned areas, while in similar annealing conditions, they do not form on the unpatterned areas. This behavior is attributed to the larger Au-Si interdiffusion in the patterned areas, which results from the Si amorphization induced by the FIB. A systematic analysis of the position of the nanodroplets shows their preferential nucleation inside the patterns, while thicker platelets of almost pure Au are observed between the patterns. The evolutions of the size homogeneity and the occupancy rate of the patterns are quantified as a function of the FIB dose and annealing temperature. Nice arrays of perfectly ordered AuSi catalysts are obtained after optimizing the FIB and dewetting conditions.

Laser pumping of thyristors for fast high current rise-times

DOEpatents

Glidden, Steven C.; Sanders, Howard D.

2013-06-11

An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer.

Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition

DOEpatents

Jiang, Ying-Bing [Albuquerque, NM; Cecchi, Joseph L [Albuquerque, NM; Brinker, C Jeffrey [Albuquerque, NM

2011-05-24

Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the surface of the porous layer. A plasma can then be used to react a plurality of second molecules with the first layer of first molecules to form a first layer of a barrier layer. The barrier layers can seal the pores of the porous material, function as a diffusion barrier, be conformal, and/or have a negligible impact on the overall ILD k value of the porous material.

Die singulation method and package formed thereby

DOEpatents

Anderson, Robert C [Tucson, AZ; Shul, Randy J [Albuquerque, NM; Clews, Peggy J [Tijeras, NM; Baker, Michael S [Albuquerque, NM; De Boer, Maarten P [Albuquerque, NM

2012-08-07

A method is disclosed for singulating die from a substrate having a sacrificial layer and one or more device layers, with a retainer being formed in the device layer(s) and anchored to the substrate. Deep Reactive Ion Etching (DRIE) etching of a trench through the substrate from the bottom side defines a shape for each die. A handle wafer is then attached to the bottom side of the substrate, and the sacrificial layer is etched to singulate the die and to form a frame from the retainer and the substrate. The frame and handle wafer, which retain the singulated die in place, can be attached together with a clamp or a clip and to form a package for the singulated die. One or more stops can be formed from the device layer(s) to limit a sliding motion of the singulated die.

Electrode structure and method for making the same

DOEpatents

Affinito, John D.; Lowe, Gregory K.

2015-05-26

Electrode structures, and more specifically, electrode structures for use in electrochemical cells, are provided. The electrode structures described herein may include one or more protective layers. In one set of embodiments, a protective layer may be formed by exposing a lithium metal surface to a plasma comprising ions of a gas to form a ceramic layer on top of the lithium metal. The ceramic layer may be highly conductive to lithium ions and may protect the underlying lithium metal surface from reaction with components in the electrolyte. In some cases, the ions may be nitrogen ions and a lithium nitride layer may be formed on the lithium metal surface. In other embodiments, the protective layer may be formed by converting lithium to lithium nitride at high pressures. Other methods for forming protective layers are also provided.

Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer

NASA Astrophysics Data System (ADS)

Ji, F.; Xu, J. P.; Liu, J. G.; Li, C. X.; Lai, P. T.

2011-05-01

TaON is in situ formed as a passivating interlayer in Ge metal-oxide-semiconductor (MOS) capacitors with high-k TaTiO gate dielectric fabricated simply by alternate sputtering of Ta and Ti. Also, postdeposition annealing is performed in wet N2 to suppress the growth of unstable GeOx at the Ge surface. As a result, excellent electrical properties of the Ge MOS devices are demonstrated, such as high equivalent dielectric constant (22.1), low interface-state density (7.3×1011 cm-2 eV), small gate leakage current (8.6×10-4 A cm-2 at Vg-Vfb=1 V), and high device reliability. Transmission electron microscopy and x-ray photoelectron spectroscopy support that all these should be attributed to the fact that the nitrogen barrier in the TaON interlayer can effectively block the interdiffusions of Ge and Ta, and the wet-N2 anneal can significantly suppress the growth of unstable low-k GeOx.

Active Metal Brazing and Characterization of Brazed Joints in Titanium to Carbon-Carbon Composites

NASA Technical Reports Server (NTRS)

Singh, M.; Shpargel, T. P.; Morscher, G. N.; Asthana, R.

2006-01-01

The Ti-metal/C-C composite joints were formed by reactive brazing with three commercial brazes, namely, Cu-ABA, TiCuNi, and TiCuSiI. The joint microstructures were examined using optical microscopy and scanning electron microscopy (SEM) coupled with energy dispersive spectrometry (EDS). The results of the microstructure analysis indicate solute redistribution across the joint and possible metallurgical bond formation via interdiffusion, which led to good wetting and spreading. A tube-on-plate tensile test was used to evaluate joint strength of Ti-tube/ C-C composite joints. The load-carrying ability was greatest for the Cu-ABA braze joint structures. This system appeared to have the best braze spreading which resulted in a larger braze/C-C composite bonded area compared to the other two braze materials. Also, joint loadcarrying ability was found to be higher for joint structures where the fiber tows in the outer ply of the C-C composite were aligned perpendicular to the tube axis when compared to the case where fiber tows were aligned parallel to the tube axis.

Microscopy of Alloy Formation on Arc Plasma Sintered Oxide Dispersion Strengthen (ODS) Steel

NASA Astrophysics Data System (ADS)

Bandriyana, B.; Sujatno, A.; Salam, R.; Dimyati, A.; Untoro, P.

2017-07-01

The oxide dispersed strengthened (ODS) alloys steel developed as structure material for nuclear power plants (NPP) has good resistant against creep due to their unique microstructure. Microscopy investigation on the microstructure formation during alloying process especially at the early stages was carried out to study the correlation between structure and property of ODS alloys. This was possible thanks to the arc plasma sintering (APS) device which can simulate the time dependent alloying processes. The ODS sample with composition of 88 wt.% Fe and 12 wt.% Cr powder dispersed with 1 wt.% ZrO2 nano powder was mixed in a high energy milling, isostatic compressed to form sample coins and then alloyed in APS. The Scanning Electron Microscope (SEM) with X-ray Diffraction Spectroscopy (EDX) line scan and mapping was used to characterize the microstructure and elemental composition distribution of the samples. The alloying process with unification of each Fe and Cr phase continued by the alloying formation of Fe-Cr by inter-diffusion of both Fe and Cr and followed by the improvement of the mechanical properties of hardness.

Diffusion bonding of titanium to 304 stainless steel

NASA Astrophysics Data System (ADS)

Ghosh, M.; Bhanumurthy, K.; Kale, G. B.; Krishnan, J.; Chatterjee, S.

2003-11-01

Diffusion bonding between commercially pure titanium and an austenitic stainless steel (AISI 304) has been carried out in the temperature range of 850-950 °C for 2 h at uniaxial pressure of 3 MPa in vacuum. The microstructure of the diffusion zone has been analysed by optical and scanning electron microscopy (SEM). The interdiffusion of the diffusing species across the interface has been evaluated by electron probe microanalysis (EPMA). The reaction products formed at the interface have been identified by X-ray diffraction technique. It has been observed that the diffusion zone is dominated by the presence of the σ phase close to the stainless steel side and the solid solution of β-Ti (solutes are Fe, Cr and Ni) close to the titanium. The presence of Fe 2Ti and FeTi has been found in the reaction zone. It has been observed that the bond strength (˜222 MPa) is highest for the couple processed at 850 °C and this value decreases with rise in joining temperature. The variation of strength of the transition joints is co-related with the microstructural characteristics of the diffusion zone.

Interfacial structure, bonding and composition of InAs and GaSb thin films determined using coherent Bragg rod analysis.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cionca, C.; Walko, D. A.; Yacoby, Y.

2007-01-01

We have used Bragg rod x-ray diffraction combined with a direct method of phase retrieval to extract atomic resolution electron-density maps of a complementary series of heteroepitaxial III-V semiconductor samples. From the three-dimensional electron-density maps we derive the monolayer spacings, the chemical compositions, and the characteristics of the bonding for all atomic planes in the film and across the film-substrate interface. InAs films grown on GaSb(001) under two different As conditions (using dimer or tetramer forms) both showed conformal roughness and mixed GaAs/InSb interfacial bonding character. The As tetramer conditions favored InSb bonding at the interface while, in the casemore » of the dimer, the percentages corresponding to GaAs and InSb bonding were equal within the experimental error. The GaSb film grown on InAs(001) displayed significant In and As interdiffusion and had a relatively large fraction of GaAs-like bonds at the interface.« less

Nanostructure Neutron Converter Layer Development

NASA Technical Reports Server (NTRS)

Park, Cheol (Inventor); Lowther, Sharon E. (Inventor); Kang, Jin Ho (Inventor); Thibeault, Sheila A. (Inventor); Sauti, Godfrey (Inventor); Bryant, Robert G. (Inventor)

2016-01-01

Methods for making a neutron converter layer are provided. The various embodiment methods enable the formation of a single layer neutron converter material. The single layer neutron converter material formed according to the various embodiments may have a high neutron absorption cross section, tailored resistivity providing a good electric field penetration with submicron particles, and a high secondary electron emission coefficient. In an embodiment method a neutron converter layer may be formed by sequential supercritical fluid metallization of a porous nanostructure aerogel or polyimide film. In another embodiment method a neutron converter layer may be formed by simultaneous supercritical fluid metallization of a porous nanostructure aerogel or polyimide film. In a further embodiment method a neutron converter layer may be formed by in-situ metalized aerogel nanostructure development.

Multiple wavelength photolithography for preparing multilayer microstructures

DOEpatents

Dentinger, Paul Michael; Krafcik, Karen Lee

2003-06-24

The invention relates to a multilayer microstructure and a method for preparing thereof. The method involves first applying a first photodefinable composition having a first exposure wavelength on a substrate to form a first polymeric layer. A portion of the first photodefinable composition is then exposed to electromagnetic radiation of the first exposure wavelength to form a first pattern in the first polymeric layer. After exposing the first polymeric layer, a second photodefinable composition having a second exposure wavelength is applied on the first polymeric layer to form a second polymeric layer. A portion of the second photodefinable composition is then exposed to electromagnetic radiation of the second exposure wavelength to form a second pattern in the second polymeric layer. In addition, a portion of each layer is removed according to the patterns to form a multilayer microstructure having a cavity having a shape that corresponds to the portions removed.

Hollow fiber membranes and methods for forming same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhandari, Dhaval Ajit; McCloskey, Patrick Joseph; Howson, Paul Edward

2016-03-22

The invention provides improved hollow fiber membranes having at least two layers, and methods for forming the same. The methods include co-extruding a first composition, a second composition, and a third composition to form a dual layer hollow fiber membrane. The first composition includes a glassy polymer; the second composition includes a polysiloxane; and the third composition includes a bore fluid. The dual layer hollow fiber membranes include a first layer and a second layer, the first layer being a porous layer which includes the glassy polymer of the first composition, and the second layer being a polysiloxane layer whichmore » includes the polysiloxane of the second composition.« less

Turbine airfoil with a compliant outer wall

DOEpatents

Campbell, Christian X [Oviedo, FL; Morrison, Jay A [Oviedo, FL

2012-04-03

A turbine airfoil usable in a turbine engine with a cooling system and a compliant dual wall configuration configured to enable thermal expansion between inner and outer layers while eliminating stress formation in the outer layer is disclosed. The compliant dual wall configuration may be formed a dual wall formed from inner and outer layers separated by a support structure. The outer layer may be a compliant layer configured such that the outer layer may thermally expand and thereby reduce the stress within the outer layer. The outer layer may be formed from a nonplanar surface configured to thermally expand. In another embodiment, the outer layer may be planar and include a plurality of slots enabling unrestricted thermal expansion in a direction aligned with the outer layer.

The double layers in the plasma sheet boundary layer during magnetic reconnection

NASA Astrophysics Data System (ADS)

Guo, J.; Yu, B.

2014-11-01

We studied the evolutions of double layers which appear after the magnetic reconnection through two-dimensional electromagnetic particle-in-cell simulation. The simulation results show that the double layers are formed in the plasma sheet boundary layer after magnetic reconnection. At first, the double layers which have unipolar structures are formed. And then the double layers turn into bipolar structures, which will couple with another new weak bipolar structure. Thus a new double layer or tripolar structure comes into being. The double layers found in our work are about several ten Debye lengths, which accords with the observation results. It is suggested that the electron beam formed during the magnetic reconnection is responsible for the production of the double layers.

Methods of fabrication of graphene nanoribbons

DOEpatents

Zhang, Yuegang

2015-06-23

Methods of fabricating graphene nanoribbons include depositing a catalyst layer on a substrate. A masking layer is deposited on the catalyst layer. The masking layer and the catalyst layer are etched to form a structure on the substrate, the structure comprising a portion of the catalyst layer and a portion of the masking layer disposed on the catalyst layer, with sidewalls of the catalyst layer being exposed. A graphene layer is formed on a sidewall of the catalyst layer with a carbon-containing gas.

Environmentally-assisted technique for transferring devices onto non-conventional substrates

DOEpatents

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

2016-05-10

A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing fluid-assisted interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2015-10-20

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2014-07-15

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Morphology of the Dentin-resin Interface yielded by Two-step Etch-and-rinse Adhesives with Different Solvents.

PubMed

Ferreira, João C; Pires, Patrícia T; de Azevedo, Álvaro F; Arantes-Oliveira, Sofia; Silva, Mário J; de Melo, Paulo R

2017-10-01

The study aimed to analyze the morphology of the dentin-resin interface yielded by two-step etch-and-rinse adhesive systems with different solvents and compositions. A total of 32 dentine disks were prepared and randomly assigned to four groups of one-bottle etch-and-rinse adhesive systems containing different solvents: group I, Adper Scotchbond-IXT™ (ethanol/water); group II, XP-Bond™ (tertiary butanol); group III, Prime and Bond NT ® (acetone); and group IV, One Coat bond® (5% water). Adhesive systems were applied onto dentin disks, which were then thermal cycled, divided into two hemi-disks (n = 16), and prepared for field-emission scanning electron microscopy to examine the dentin-resin interdiffusion zone. Microphotographs were scanned and data were processed. Data were compared with analysis of variance multivariant test after Kolmogorov-Smirnov and Shapiro-Wilk tests using Statistic Package for the Social Sciences. The adhesive layer thickness average found was group I: 45.9 ± 13.41 urn, group II: 20.6 ± 16.32 urn, group III: 17.7 ± 11.75 urn, and group IV: 50.7 ± 27.81 urn. Significant differences were found between groups I and IV and groups II and III (p < 0.000). Groups I (3.23 ± 0.53 μm) and II (3.13 ± 0.73 μm) yielded significantly thicker hybrid layers than groups III (2.53 ± 0.50 μm) and IV (1.84 ± 0.27 μm) (p < 0.003). Group III presented a less homogeneous hybrid layer, with some gaps. Tag length average was greater in groups II (111.0 ± 36.92 μm) and IV (128.9 ± 78.38 μm) than in groups I (61.5 ± 18.10 μm) and III (68.6 ± 15.84 μm) (p < 0.008). Adhesives systems with different solvents led to significant differences in the dentin-resin interface morphology. Solvents role in adhesives bond strength should be considered together with the other adhesive system components. The adhesive containing tertiary butanol, in addition, seems to originate a good-quality hybrid layer and long, entangled tags and also appears to have greater ability to originate microtags, which may indicate higher bond strength.

Grain boundary diffusion in olivine (Invited)

NASA Astrophysics Data System (ADS)

Marquardt, K.; Dohmen, R.

2013-12-01

Olivine is the main constituent of Earth's upper mantle. The individual mineral grains are separated by grain boundaries that have very distinct properties compared to those of single crystals and strongly affect large-scale physical and chemical properties of rocks, e.g. viscosity, electrical conductivity and diffusivity. Knowledge on the grain boundary physical and chemical properties, their population and distribution in polycrystalline materials [1] is a prerequisite to understand and model bulk (rock) properties, including their role as pathways for element transport [2] and the potential of grain boundaries as storage sites for incompatible elements [3]. Studies on selected and well characterized single grain boundaries are needed for a detailed understanding of the influence of varying grain boundaries. For instance, the dependence of diffusion on the grain boundary structure (defined by the lattice misfit) and width in silicates is unknown [2, 4], but limited experimental studies in material sciences indicate major effects of grain boundary orientation on diffusion rates. We characterized the effect of grain boundary orientation and temperature on element diffusion in forsterite grain boundaries by transmission electron microscopy (TEM).The site specific TEM-foils were cut using the focused ion beam technique (FIB). To study diffusion we prepared amorphous thin-films of Ni2SiO4 composition perpendicular to the grain boundary using pulsed laser deposition. Annealing (800-1450°C) leads to crystallization of the thin-film and Ni-Mg inter-diffuse into the crystal volume and along the grain boundary. The inter-diffusion profiles were measured using energy dispersive x-ray spectrometry in the TEM, standardized using the Cliff-Lorimer equation and EMPA measurements. We obtain volume diffusion coefficients that are comparable to Ni-Mg inter-diffusion rates in forsterite determined in previous studies at comparable temperatures, with similar activation energies. Grain boundary diffusion perpendicular to the dislocation lines of the small angle grain boundaries proved to be about an order of magnitude faster than volume diffusion, whereas diffusion in high angle grain boundaries is several orders of magnitude faster. We will discuss the variation of element diffusion rates with grain boundary orientation and the temperature- and/or time-induced transition from one diffusion regime to the next regime. This is done using time series experiments and two-dimensional grain boundary diffusion simulations. Finally, we will debate the differences between our data and other data sets that result from different experimental setups, conditions and analyses.

Method of fabricating conductive electrodes on the front and backside of a thin film structure

DOEpatents

Tabada, Phillipe J [Roseville, CA; Tabada, legal representative, Melody; Pannu, Satinderpall S [Pleasanton, CA

2011-05-22

A method of fabricating a thin film device having conductive front and backside electrodes or contacts. Top-side cavities are first formed on a first dielectric layer, followed by the deposition of a metal layer on the first dielectric layer to fill the cavities. Defined metal structures are etched from the metal layer to include the cavity-filled metal, followed by depositing a second dielectric layer over the metal structures. Additional levels of defined metal structures may be formed in a similar manner with vias connecting metal structures between levels. After a final dielectric layer is deposited, a top surface of a metal structure of an uppermost metal layer is exposed through the final dielectric layer to form a front-side electrode, and a bottom surface of a cavity-filled portion of a metal structure of a lowermost metal layer is also exposed through the first dielectric layer to form a back-side electrode.

Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

DOEpatents

Jie, Qing; Ren, Zhifeng; Chen, Gang

2015-12-08

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.

Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

DOEpatents

Jie, Qing; Ren, Zhifeng; Chen, Gang

2017-08-01

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.

Sintered wire cesium dispenser photocathode

DOEpatents

Montgomery, Eric J; Ives, R. Lawrence; Falce, Louis R

2014-03-04

A photoelectric cathode has a work function lowering material such as cesium placed into an enclosure which couples a thermal energy from a heater to the work function lowering material. The enclosure directs the work function lowering material in vapor form through a low diffusion layer, through a free space layer, and through a uniform porosity layer, one side of which also forms a photoelectric cathode surface. The low diffusion layer may be formed from sintered powdered metal, such as tungsten, and the uniform porosity layer may be formed from wires which are sintered together to form pores between the wires which are continuous from the a back surface to a front surface which is also the photoelectric surface.

Epitaxial CoSi2 on MOS devices

DOEpatents

Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

2005-01-25

An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

Metal deposition using seed layers

DOEpatents

Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

2013-11-12

Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

Article with buffer layer and method of making the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCamy, James W.; Ma, Zhixun; Kabagambe, Benjamin

A method of forming a coating layer on a glass substrate in a glass manufacturing process includes: providing a first coating precursor material for a selected coating layer composition to at least one multislot coater to form a first coating region of the selected coating layer; and providing a second coating precursor material for the selected coating layer composition to the multislot coater to form a second coating region of the selected coating layer over the first region. The first coating precursor material is different than the second precursor coating material.

Understanding the interdiffusion behavior and determining the long term stability of tungsten fiber reinforced niobium-base matrix composite systems

NASA Technical Reports Server (NTRS)

Tien, John K.

1990-01-01

The long term interdiffusional stability of tungsten fiber reinforced niobium alloy composites is addressed. The matrix alloy that is most promising for use as a high temperature structural material for reliable long-term space power generation is Nb1Zr. As an ancillary project to this program, efforts were made to assess the nature and kinetics of interphase reaction between selected beryllide intermetallics and nickel and iron aluminides.

Environmentally-assisted technique for transferring devices onto non-conventional substrates

DOEpatents

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

2014-08-26

A device fabrication method includes: (1) providing a growth substrate including a base and an oxide layer disposed over the base; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

Effects of hydrogen fugacity and confining pressure on the interdiffusion rate of NaSi-CaAl in plagioclase

NASA Astrophysics Data System (ADS)

Yund, Richard A.; Snow, Eleanour

1989-08-01

Average? values for NaSi-CaAl interdiffusion in the compositional interval from An0 to An26 have been determined at 1000°C by the method of lamellar homogenization. At 1500 MPa confining pressure (P), ? increases 1 order of magnitude (5.0×10-21 to 4.0×10-20 m2/s) for 4 orders of magnitude increase in hydrogen fugacity (0.029, Mn3O4-Mn2O3 buffer, to 197 MPa, FeO-Fe3O4 buffer). At constant hydrogen fugacity (fH2), ? increases rapidly at low pressure and becomes nearly independent of P above 1000 MPa. (For fH2 = 0.1 MPa, ? = 2.8 × 10-22 m2/s at P = 0.1 MPa, 5.0 × 10-21 at P = 500, 1.3×10-20 at P = 1000, and 1.4×10-20 at P = 1500). The dependence of ? on increasing pressure, when a hydrogen-related species is present, is believed to be due to an increase in the concentration of the structural defect associated with increase in the hydrogen impurity. In most crustal igneous rocks, which are internally buffered near quartz-fayalite-magnetite, the dependence of ? on fH2 is relatively minor compared to the effect of confining pressure.

Supercritical fluid in the mantle transition zone deduced from H-D interdiffusion of wadsleyite

NASA Astrophysics Data System (ADS)

Sun, Wei; Yoshino, Takashi; Sakamoto, Naoya; Yurimoto, Hisayoshi

2018-02-01

Knowledge of the distribution of water in the Earth's mantle is key to understanding the mantle convection and geochemical evolution of the Earth. As wadsleyite and ringwoodite can incorporate large amounts of water in their crystal structures, proton conduction has been invoked to account for the widespread conductive anomalies observed in the mantle wedge, where descending slab stagnates at the transition zone. However, there is a lot of controversy on whether proton conduction by itself is able to explain such anomalies, because of large discrepancy in the extent of the water effect deduced from previous electrical conductivity measurements on hydrous polycrystalline wadsleyite and ringwoodite. Here we report the hydrogen self-diffusion coefficient obtained from H-D interdiffusion experiments in wadsleyite single-crystal couples. Our results demonstrate that the effect of water on the electrical conductivity of wadsleyite is limited and hydrous wadsleyite by itself is unable to explain conductive anomalies in the transition zone. In contrast, the expected hydrogen effective diffusion does not allow the wide propagation of water between the stagnant slab and surrounding mantle, probably leading to persistence of local water saturation and continuous release of supercritical fluids at the stagnant slab roof on geological time scales. This phenomenon provides an alternative explanation for both the high-conductivity and seismic-velocity anomalies observed in the mantle wedge at the transition-zone depth.

Strain-compensated infrared photodetector and photodetector array

DOEpatents

Kim, Jin K; Hawkins, Samuel D; Klem, John F; Cich, Michael J

2013-05-28

A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.

Oxidation of Alumina-Forming MAX Phases in Turbine Environments

NASA Technical Reports Server (NTRS)

Smialek, James; Garg, Anita; Harder, Bryan; Nesbitt, James; Gabb, Timothy; Gray, SImon

2017-01-01

Protective coatings for high temperature turbine components are based on YSZ thermal barriers and oxidation resistant, alumina-forming NiAl or NiCoCrAlY bond coats. Ti2AlC and Cr2AlC MAX phases are thus of special interest because of good oxidation resistance and CTE that can match Al2O3 and YSZ. Their alumina scales grow according to cubic kinetics due to grain growth in the scale, with initial heating dominated by fast TiO2 growth. Protective cubic kinetics are also found in high pressure burner rig tests of MAXthal 211 Ti2AlC, but with reduced rates due to volatile TiO(OH)2 formation in water vapor. YSZ-coatings on bulk Ti2AlC exhibit remarkable durability up to 1300C in furnace tests and at least a 25x life advantage compared to superalloys. At another extreme, Cr2AlC is resistant to low temperature Na2SO4 hot corrosion and exhibits thermal cycling stability bonded to a superalloy disk material. Accordingly, sputtered Cr2AlC coatings on disk specimens prevented hot corrosion detriments on LCF. Breakaway oxidation (Ti2AlC), scale spallation (Cr2AlC), interdiffusion, and processing as coatings still present serious challenges. However the basic properties of MAX phases provide some unusual opportunities for use in high temperature turbines.

Structure for HTS composite conductors and the manufacture of same

DOEpatents

Cotton, J.D.; Riley, G.N. Jr.

1999-06-01

A superconducting oxide composite structure including a superconducting oxide member, a metal layer surrounding the superconducting oxide member, and an insulating layer of a complex oxide formed in situ adjacent to the superconducting oxide member and the metal layer is provided together with a method of forming such a superconducting oxide composite structure including encapsulating a superconducting oxide member or precursor within a metal matrix layer from the group of: (1) a reactive metal sheath adjacent to the superconducting oxide member or precursor, the reactive metal sheath surrounded by a second metal layer or (2) an alloy containing a reactive metal; to form an intermediate product, and, heating the intermediate product at temperatures and for time sufficient to form an insulating layer of a complex oxide in situ, the insulating layer to the superconducting oxide member or precursor and the metal matrix layer. 10 figs.

Structure for hts composite conductors and the manufacture of same

DOEpatents

Cotton, James D.; Riley, Jr., Gilbert Neal

1999-01-01

A superconducting oxide composite structure including a superconducting oxide member, a metal layer surrounding the superconducting oxide member, and an insulating layer of a complex oxide formed in situ adjacent to the superconducting oxide member and the metal layer is provided together with a method of forming such a superconducting oxide composite structure including encapsulating a superconducting oxide member or precursor within a metal matrix layer from the group of: (i) a reactive metal sheath adjacent to the superconducting oxide member or precursor, the reactive metal sheath surrounded by a second metal layer or (ii) an alloy containing a reactive metal; to form an intermediate product, and, heating the intermediate product at temperatures and for time sufficient to form an insulating layer of a complex oxide in situ, the insulating layer to the superconducting oxide member or precursor and the metal matrix layer.

Ceramic substrate including thin film multilayer surface conductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolf, Joseph Ambrose; Peterson, Kenneth A.

2017-05-09

A ceramic substrate comprises a plurality of ceramic sheets, a plurality of inner conductive layers, a plurality of vias, and an upper conductive layer. The ceramic sheets are stacked one on top of another and include a top ceramic sheet. The inner conductive layers include electrically conductive material that forms electrically conductive features on an upper surface of each ceramic sheet excluding the top ceramic sheet. The vias are formed in each of the ceramic sheets with each via being filled with electrically conductive material. The upper conductive layer includes electrically conductive material that forms electrically conductive features on anmore » upper surface of the top ceramic sheet. The upper conductive layer is constructed from a stack of four sublayers. A first sublayer is formed from titanium. A second sublayer is formed from copper. A third sublayer is formed from platinum. A fourth sublayer is formed from gold.« less

Catalyst containing oxygen transport membrane

DOEpatents

Lane, Jonathan A.; Wilson, Jamie R.; Christie, Gervase Maxwell; Petigny, Nathalie; Sarantopoulos, Christos

2017-02-07

A composite oxygen transport membrane having a dense layer, a porous support layer and an intermediate porous layer located between the dense layer and the porous support layer. Both the dense layer and the intermediate porous layer are formed from an ionic conductive material to conduct oxygen ions and an electrically conductive material to conduct electrons. The porous support layer has a high permeability, high porosity, and a microstructure exhibiting substantially uniform pore size distribution as a result of using PMMA pore forming materials or a bi-modal particle size distribution of the porous support layer materials. Catalyst particles selected to promote oxidation of a combustible substance are located in the intermediate porous layer and in the porous support adjacent to the intermediate porous layer. The catalyst particles can be formed by wicking a solution of catalyst precursors through the porous support toward the intermediate porous layer.

Method of making molecularly doped composite polymer material

DOEpatents

Affinito, John D [Tucson, AZ; Martin, Peter M [Kennewick, WA; Graff, Gordon L [West Richland, WA; Burrows, Paul E [Kennewick, WA; Gross, Mark E. , Sapochak, Linda S.

2005-06-21

A method of making a composite polymer of a molecularly doped polymer. The method includes mixing a liquid polymer precursor with molecular dopant forming a molecularly doped polymer precursor mixture. The molecularly doped polymer precursor mixture is flash evaporated forming a composite vapor. The composite vapor is cryocondensed on a cool substrate forming a composite molecularly doped polymer precursor layer, and the cryocondensed composite molecularly doped polymer precursor layer is cross linked thereby forming a layer of the composite polymer layer of the molecularly doped polymer.

Forming aspheric optics by controlled deposition

DOEpatents

Hawryluk, A.M.

1998-04-28

An aspheric optical element is disclosed formed by depositing material onto a spherical surface of an optical element by controlled deposition to form an aspheric surface of desired shape. A reflecting surface, single or multi-layer, can then be formed on the aspheric surface by evaporative or sputtering techniques. Aspheric optical elements are suitable for deep ultra-violet (UV) and x-ray wavelengths. The reflecting surface may, for example, be a thin ({approx}100 nm) layer of aluminum, or in some cases the deposited modifying layer may function as the reflecting surface. For certain applications, multi-layer reflective surfaces may be utilized, such as chromium-carbon or tungsten-carbon multi-layer, with the number of layers and thickness being determined by the intended application. 4 figs.

Forming aspheric optics by controlled deposition

DOEpatents

Hawryluk, Andrew M.

1998-01-01

An aspheric optical element formed by depositing material onto a spherical surface of an optical element by controlled deposition to form an aspheric surface of desired shape. A reflecting surface, single or multi-layer, can then be formed on the aspheric surface by evaporative or sputtering techniques. Aspheric optical elements are suitable for deep ultra-violet (UV) and x-ray wavelengths. The reflecting surface may, for example, be a thin (.about.100 nm) layer of aluminum, or in some cases the deposited modifying layer may function as the reflecting surface. For certain applications, multi-layer reflective surfaces may be utilized, such as chromium-carbon or tungsten-carbon multi-layer, with the number of layers and thickness being determined by the intended application.

Controlled growth of larger heterojunction interface area for organic photosensitive devices

DOEpatents

Yang, Fan [Somerset, NJ; Forrest, Stephen R [Ann Arbor, MI

2009-12-29

An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.

Sub-micrometer yttrium iron garnet LPE films with low ferromagnetic resonance losses

NASA Astrophysics Data System (ADS)

Dubs, Carsten; Surzhenko, Oleksii; Linke, Ralf; Danilewsky, Andreas; Brückner, Uwe; Dellith, Jan

2017-05-01

Using a liquid phase epitaxy (LPE) technique (1 1 1) yttrium iron garnet (YIG) films with thicknesses of  ≈100 nm and surface roughnesses as low as 0.3 nm have been grown on (1 1 1) gadolinium gallium garnet (GGG) substrates as a basic material for spin-wave propagation experiments in microstructured waveguides. The continuously strained films exhibit nearly perfect crystallinity without significant mosaicity and with effective lattice misfits of Δ {{a}\\bot}/{{a}s}≈ {{10}-4} and below. The film/substrate interface is extremely sharp without broad interdiffusion layer formation. All LPE films exhibit a nearly bulk-like saturation magnetization of (1800+/- 20 ) Gs and an ‘easy cone’ anisotropy type with extremely small in-plane coercive fields  <0.2 Oe. There is a rather weak in-plane magnetic anisotropy with a pronounced six-fold symmetry observed for the saturation field  <1.5 Oe. No significant out-of-plane anisotropy is observed, but a weak dependence of the effective magnetization on the lattice misfit is detected. The narrowest ferromagnetic resonance linewidth is determined to be 1.4 Oe @ 6.5 GHz which is the lowest value reported so far for YIG films of 100 nm thicknesses and below. The Gilbert damping coefficient for investigated LPE films is estimated to be close to 1× {{10}-4} .

Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

NASA Astrophysics Data System (ADS)

Novaković, M.; Zhang, K.; Popović, M.; Bibić, N.; Hofsäss, H.; Lieb, K. P.

2011-05-01

Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-keV Xe + ions at fluences of up to 3 × 10 16 cm -2. We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 °C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Δ σ2/ Φ = 3.0(4) nm 4, is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 °C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co 2Si → CoSi → CoSi 2.

Very large scale heterogeneous integration (VLSHI) and wafer-level vacuum packaging for infrared bolometer focal plane arrays

NASA Astrophysics Data System (ADS)

Forsberg, Fredrik; Roxhed, Niclas; Fischer, Andreas C.; Samel, Björn; Ericsson, Per; Hoivik, Nils; Lapadatu, Adriana; Bring, Martin; Kittilsland, Gjermund; Stemme, Göran; Niklaus, Frank

2013-09-01

Imaging in the long wavelength infrared (LWIR) range from 8 to 14 μm is an extremely useful tool for non-contact measurement and imaging of temperature in many industrial, automotive and security applications. However, the cost of the infrared (IR) imaging components has to be significantly reduced to make IR imaging a viable technology for many cost-sensitive applications. This paper demonstrates new and improved fabrication and packaging technologies for next-generation IR imaging detectors based on uncooled IR bolometer focal plane arrays. The proposed technologies include very large scale heterogeneous integration for combining high-performance, SiGe quantum-well bolometers with electronic integrated read-out circuits and CMOS compatible wafer-level vacuum packing. The fabrication and characterization of bolometers with a pitch of 25 μm × 25 μm that are arranged on read-out-wafers in arrays with 320 × 240 pixels are presented. The bolometers contain a multi-layer quantum well SiGe thermistor with a temperature coefficient of resistance of -3.0%/K. The proposed CMOS compatible wafer-level vacuum packaging technology uses Cu-Sn solid-liquid interdiffusion (SLID) bonding. The presented technologies are suitable for implementation in cost-efficient fabless business models with the potential to bring about the cost reduction needed to enable low-cost IR imaging products for industrial, security and automotive applications.

Friction Stir Processing of Copper-Coated SiC Particulate-Reinforced Aluminum Matrix Composite

PubMed Central

Huang, Chih-Wei; Aoh, Jong-Ning

2018-01-01

In the present work, we proposed a novel friction stir processing (FSP) to produce a locally reinforced aluminum matrix composite (AMC) by stirring copper-coated SiC particulate reinforcement into Al6061 alloy matrix. Electroless-plating process was applied to deposit the copper surface coating on the SiC particulate reinforcement for the purpose of improving the interfacial adhesion between SiC particles and Al matrix. The core-shell SiC structure provides a layer for the atomic diffusion between aluminum and copper to enhance the cohesion between reinforcing particles and matrix on one hand, the dispersion of fine copper in the Al matrix during FSP provides further dispersive strengthening and solid solution strengthening, on the other hand. Hardness distribution and tensile results across the stir zone validated the novel concept in improving the mechanical properties of AMC that was realized via FSP. Optical microscope (OM) and Transmission Electron Microscopy (TEM) investigations were conducted to investigate the microstructure. Energy dispersive spectrometer (EDS), electron probe micro-analyzer (EPMA), and X-ray diffraction (XRD) were explored to analyze the atomic inter-diffusion and the formation of intermetallic at interface. The possible strengthening mechanisms of the AMC containing Cu-coated SiC particulate reinforcement were interpreted. The concept of strengthening developed in this work may open a new way of fabricating of particulate reinforced metal matrix composites. PMID:29652846

The permittivity and refractive index measurements of doped barium titanate (BT-BCN)

NASA Astrophysics Data System (ADS)

Meeker, Michael A.; Kundu, Souvik; Maurya, Deepam; Kang, Min-Gyu; Sosa, Alejandro; Mudiyanselage, Rathsara R. H. H.; Clavel, Michael; Gollapudi, Sreenivasulu; Hudait, Mantu K.; Priya, Shashank; Khodaparast, Giti A.

2017-11-01

While piezoelectric- ferroelectric materials offer great potential for nonvolatile random access memory, most commonly implemented ferroelectrics contain lead which imposes a challenge in meeting environmental regulations. One promising candidate for lead-free, ferroelectric material based memory is (1 - x) BaTiO3 - xBa(Cu1 / 3 Nb2 / 3) O3 (BT-BCN), x = 0.025 . The samples studied here were grown on a Si substrate with an HfO2 buffer layer, thereby preventing the interdiffusion of BT-BTCN into Si. This study provides further insight into the physical behavior of BT-BCN that will strengthen the foundation for developing switching devices. The sample thicknesses ranged from 1.5 to 120 nm, and piezoelectric force microscopy was employed in order to understand the local ferroelectric behaviors. Dielectric constant as a function of frequency demonstrated enhanced frequency dispersion indicating the polar nature of the composition. The relative permittivity was found to change significantly with varying bias voltage and exhibited a tunability of 82%. The difference in the peak position during up and down sweeps is due to the presence of the spontaneous polarization. Furthermore, reflectometry was performed to determine the refractive index of samples with differing thicknesses. Our results demonstrate that refractive indices are similar to that of barium titanate. This is a promising result indicating that improved ferroelectric properties are obtained without compromising the optical properties.

Kinetics of silicide formation over a wide range of heating rates spanning six orders of magnitude

DOE Office of Scientific and Technical Information (OSTI.GOV)

Molina-Ruiz, Manel; Lopeandía, Aitor F.; Gonzalez-Silveira, Marta

Kinetic processes involving intermediate phase formation are often assumed to follow an Arrhenius temperature dependence. This behavior is usually inferred from limited data over narrow temperature intervals, where the exponential dependence is generally fully satisfied. However, direct evidence over wide temperature intervals is experimentally challenging and data are scarce. Here, we report a study of silicide formation between a 12 nm film of palladium and 15 nm of amorphous silicon in a wide range of heating rates, spanning six orders of magnitude, from 0.1 to 10{sup 5 }K/s, or equivalently more than 300 K of variation in reaction temperature. The calorimetric traces exhibit severalmore » distinct exothermic events related to interdiffusion, nucleation of Pd{sub 2}Si, crystallization of amorphous silicon, and vertical growth of Pd{sub 2}Si. Interestingly, the thickness of the initial nucleation layer depends on the heating rate revealing enhanced mass diffusion at the fastest heating rates during the initial stages of the reaction. In spite of this, the formation of the silicide strictly follows an Arrhenius temperature dependence over the whole temperature interval explored. A kinetic model is used to fit the calorimetric data over the complete heating rate range. Calorimetry is complemented by structural analysis through transmission electron microscopy and both standard and in-situ synchrotron X-ray diffraction.« less

A novel reusable nanocomposite for complete removal of dyes, heavy metals and microbial load from water based on nanocellulose and silver nano-embedded pebbles.

PubMed

Suman; Kardam, Abhishek; Gera, Meeta; Jain, V K

2015-01-01

The present work proposed a nanocellulose (NC)-silver nanoparticles (AgNPs) embedded pebbles-based composite material as a novel reusable cost-effective water purification device for complete removal of dyes, heavy metals and microbes. NC was prepared using acid hydrolysis of cellulose. The AgNPs were generated in situ using glucose and embedded within the porous concrete pebbles by the technique of inter-diffusion of ion, providing a very strong binding of nanoparticles within the porous pebbles and thus preventing any nanomaterials leaching. Fabrication of a continual running water purifier was achieved by making different layering of NC and Ag nano-embedded pebbles in a glass column. The water purifier exhibited not only excellent dye and heavy metal adsorption capacity, but also long-term antibacterial activity against pathogenic and non-pathogenic bacterial strains. The adsorption mainly occurred through electrostatic interaction and pore diffusion also contributed to the process. The bed column purifier has shown 99.48% Pb(II) and 98.30% Cr(III) removal efficiency along with 99% decontamination of microbial load at an optimum working pH of 6.0. The high adsorption capacity and reusability, with complete removal of dyes, heavy metals and Escherichia coli from the simulated contaminated water of composite material, will provide new opportunities to develop a cost-effective and eco-friendly water purifier for commercial application.

Electrical isolation of component cells in monolithically interconnected modules

DOEpatents

Wanlass, Mark W.

2001-01-01

A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.

Optimization of Al2O3/TiO2/Al 2O3 Multilayer Antireflection Coating With X-Ray Scattering Techniques

NASA Astrophysics Data System (ADS)

Li, Chao

Broadband multilayer antireflection coatings (ARCs) are keys to improving solar cell efficiencies. The goal of this dissertation is to optimize the multilayer Al2O3/TiO2/Al2O 3 ARC designed for a III-V space multi-junction solar cell with understanding influences of post-annealing and varying deposition parameters on the optical properties. Accurately measuring optical properties is important in accessing optical performances of ARCs. The multilayer Al2O3/TiO 2/Al2O3 ARC and individual Al2O 3 and TiO2 layers were characterized by a novel X-ray reflectivity (XRR) method and a combined method of grazing-incidence small angle X-ray scattering (GISAXS), atomic force microscopy (AFM), and XRR developed in this study. The novel XRR method combining an enhanced Fourier analysis with specular XRR simulation effectively determines layer thicknesses and surface and interface roughnesses and/or grading with sub-nanometer precision, and densities less than three percent uncertainty. Also, the combined method of GISAXS, AFM, and XRR characterizes the distribution of pore size with one-nanometer uncertainty. Unique to this method, the diffuse scattering from surface and interface roughnesses is estimated with surface parameters (root mean square roughness sigma, lateral correlation length ξ, and Hurst parameter h) obtained from AFM, and layer densities, surface grading and interface roughness/grading obtained from specular XRR. It is then separated from pore scattering. These X-ray scattering techniques obtained consistent results and were validated by other techniques including optical reflectance, spectroscopic ellipsometry (SE), glancing incidence X-ray diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy. The ARCs were deposited by atomic layer deposition with standard parameters at 200 °C. The as-deposited individual Al2O3 layer on Si is porous and amorphous as indicated by the combined methods of GISAXS, AFM, and XRR. Both post-annealing at 400 °C for 40 min in air and varying ALD parameters can eliminate pores, and lead to consistent increases in density and refractive index determined by the XRR method, SE, and optical reflectance measurements. After annealing, the layer remains amorphous. On the other hand, the as-deposited TiO 2 layer is non-porous and amorphous. It is densified and crystallized after annealing at 400 °C for 10 min in air. The multilayer Al2O 3/TiO2/Al2O3 ARC deposited on Si has surface and interface roughnesses and/or grading on the order of one nanometer. Annealing at 400 °C for 10 min in air induces densification and crystallization of the amorphous TiO2 layer as well as possible chemical reactions between TiO2 and Si diffusing from the substrate. On the other hand, Al2O3 layers remain amorphous after annealing. The thickness of the top Al2O3 layer decreases - likely due to interdiffusion between the top two layers and loss of hydrogen from hydroxyl groups initially present in the ALD layers. The thickness of the bottom Al2O3 layer increases, probably due to the diffusion of Si atoms into the bottom layer. In addition, the multilayer Al 2O3/TiO2/Al2O3 ARC was deposited on AlInP (30nm) / GaInP (100nm) / GaAs that includes the topmost layers of III-V multi-junction solar cells. Reflectance below 5 % is achieved within nearly the whole wavelength range of the current-limiting sub-cell. Also, internal scattering occurs in the TiO2 layer possibly associated with the initiated crystallization in the TiO2 layer while absent in the amorphous Al2O3 layers.

Variable diffusion rates during exsolution coarsening in the presence of fluids.

NASA Astrophysics Data System (ADS)

Putnis, Andrew; Prent, Alexander

2017-04-01

The scale of exsolution textures in mineral solid solutions has long been used as an indicator of thermal history during cooling. The theory of spinodal decomposition in an anisotropic solid and subsequent coarsening of exsolution textures as a function of temperature and cooling rate is well developed (see Petrishcheva et al., 2009 and Abart et al., 2009 for a review of the Cahn-Hilliard theory). For the case of exsolution in the alkali feldspar solid solution [(Na,K)AlSi3O8] the characteristic texture shows compositional fluctuations in Na,K with a wavelength that depends on the cooling rate. The cooling rate is determined from knowledge of the Na-K interdiffusion coefficient, assuming that the unmixing is simply due to the interdiffusion of Na and K in an otherwise fixed tetrahedral Al,Si framework. Cryptoperthites and mesoperthites with a periodic lamellar microstructure are considered to be the end-result of such a solid-state exsolution process. Later-stage fluid infiltration results in patch perthites that are formed at a sharp replacement front by a dissolution-precipitation mechanism (Parsons et al., 2015). Patch perthites have an easily recognizable texture and are clear indicators of a reaction with an aqueous solution. The distinction is thus drawn between crypto- and meso-perthite showing periodic lamellae, associated with a solid-state exsolution process, and the patch perthite showing irregular domains of Na-rich and K-rich feldspars associated with a fluid mediated reprecipitation process. However, the presence of fluids can also enhance the coarsening of lamellar exsolution textures, retaining an apparently solid-state microstructure but with a length scale that is dependent on local recrystallization driven by fluid infiltration. Examples will be given from alkali feldspars in granitic rocks where it is clearly demonstrable that cooling rates cannot be inferred from such exsolution textures. The variability in Na,K diffusion rates and thus different length scales of exsolution are likely to be due to the efficiency of diffusional transport through a fluid phase, which is influenced by differences in fluid-induced micro- and nano-porosity. Abart R. et al. (2009) Am. J. Sci. 309, 450-475. Petrishcheva E. and Abart R. (2009) Am. J. Sci, 309, 431-449. Parsons I. et al., (2015) Am. Min. 100, 1277-1303.

Method for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2008-01-01

A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

Optically switched graphene/4H-SiC junction bipolar transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chandrashekhar, MVS; Sudarshan, Tangali S.; Omar, Sabih U.

A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on amore » first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.« less

Temperature dependence of W metallic coatings synthesized by double glow plasma surface alloying technology on CVD diamond films

NASA Astrophysics Data System (ADS)

Gao, Jie; Hei, Hongjun; Shen, Yanyan; Liu, Xiaoping; Tang, Bin; He, Zhiyong; Yu, Shengwang

2015-11-01

W metallic coatings were synthesized on free-standing chemical vapor deposition (CVD) diamond films using double glow plasma surface alloying (DGPSA) technology. The influence of varying metalizing temperatures on the microstructures, phase composition and adhesion of the W metallic coatings were investigated. Likewise, the effectiveness of the W metallic coatings was preliminary evaluated via examining the shear strength of the brazing joints between W-metalized diamond films and commercial cemented carbide (WC-Co) inserts. The results showed that continuous and compact W metallic coatings were formed on the diamond films in the temperature range of 750-800 °C, while cracks or cavities presented at the W/diamond interface at 700 °C, 850 °C and 900 °C. Inter-diffusion of W and C atoms preformed, and WC and W2C were formed at the W/diamond interfaces at all temperatures except 700 °C, at which only W2C was formed. Moreover, etched cavities appeared at the W/diamond interface when the temperature exceeded 850 °C. The critical loads for coating delamination, as measured with the scratch test, increased as the temperature rose from 700 °C to 800 °C, while decreased with further increasing temperature. The maximum load was obtained at 800 °C with a value of 17.1 N. Besides, the shear strength of the brazing joints depicted the similar trend with the critical load. The highest shear strength (249 MPa) was also obtained at 800 °C.

Methods for producing thin film charge selective transport layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

A general integral form of the boundary-layer equation for incompressible flow with an application to the calculation of the separation point of turbulent boundary layers

NASA Technical Reports Server (NTRS)

Tetervin, Neal; Lin, Chia Chiao

1951-01-01

A general integral form of the boundary-layer equation, valid for either laminar or turbulent incompressible boundary-layer flow, is derived. By using the experimental finding that all velocity profiles of the turbulent boundary layer form essentially a single-parameter family, the general equation is changed to an equation for the space rate of change of the velocity-profile shape parameter. The lack of precise knowledge concerning the surface shear and the distribution of the shearing stress across turbulent boundary layers prevented the attainment of a reliable method for calculating the behavior of turbulent boundary layers.

Method of making photovoltaic cell

DOEpatents

Cruz-Campa, Jose Luis; Zhou, Xiaowang; Zubia, David

2017-06-20

A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

Thin film photovoltaic device with multilayer substrate

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1984-01-01

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Periodic dielectric structure for production of photonic band gap and devices incorporating the same

DOEpatents

Ho, Kai-Ming; Chan, Che-Ting; Soukoulis, Costas

1994-08-02

A periodic dielectric structure which is capable of producing a photonic band gap and which is capable of practical construction. The periodic structure is formed of a plurality of layers, each layer being formed of a plurality of rods separated by a given spacing. The material of the rods contrasts with the material between the rods to have a refractive index contrast of at least two. The rods in each layer are arranged with their axes parallel and at a given spacing. Adjacent layers are rotated by 90.degree., such that the axes of the rods in any given layer are perpendicular to the axes in its neighbor. Alternating layers (that is, successive layers of rods having their axes parallel such as the first and third layers) are offset such that the rods of one are about at the midpoint between the rods of the other. A four-layer periocity is thus produced, and successive layers are stacked to form a three-dimensional structure which exhibits a photonic band gap. By virtue of forming the device in layers of elongate members, it is found that the device is susceptible of practical construction.

Method of forming a package for MEMS-based fuel cell

DOEpatents

Morse, Jeffrey D; Jankowski, Alan F

2013-05-21

A MEMS-based fuel cell package and method thereof is disclosed. The fuel cell package comprises seven layers: (1) a sub-package fuel reservoir interface layer, (2) an anode manifold support layer, (3) a fuel/anode manifold and resistive heater layer, (4) a Thick Film Microporous Flow Host Structure layer containing a fuel cell, (5) an air manifold layer, (6) a cathode manifold support structure layer, and (7) a cap. Fuel cell packages with more than one fuel cell are formed by positioning stacks of these layers in series and/or parallel. The fuel cell package materials such as a molded plastic or a ceramic green tape material can be patterned, aligned and stacked to form three dimensional microfluidic channels that provide electrical feedthroughs from various layers which are bonded together and mechanically support a MEMS-based miniature fuel cell. The package incorporates resistive heating elements to control the temperature of the fuel cell stack. The package is fired to form a bond between the layers and one or more microporous flow host structures containing fuel cells are inserted within the Thick Film Microporous Flow Host Structure layer of the package.

Method of forming a package for mems-based fuel cell

DOEpatents

Morse, Jeffrey D.; Jankowski, Alan F.

2004-11-23

A MEMS-based fuel cell package and method thereof is disclosed. The fuel cell package comprises seven layers: (1) a sub-package fuel reservoir interface layer, (2) an anode manifold support layer, (3) a fuel/anode manifold and resistive heater layer, (4) a Thick Film Microporous Flow Host Structure layer containing a fuel cell, (5) an air manifold layer, (6) a cathode manifold support structure layer, and (7) a cap. Fuel cell packages with more than one fuel cell are formed by positioning stacks of these layers in series and/or parallel. The fuel cell package materials such as a molded plastic or a ceramic green tape material can be patterned, aligned and stacked to form three dimensional microfluidic channels that provide electrical feedthroughs from various layers which are bonded together and mechanically support a MEMOS-based miniature fuel cell. The package incorporates resistive heating elements to control the temperature of the fuel cell stack. The package is fired to form a bond between the layers and one or more microporous flow host structures containing fuel cells are inserted within the Thick Film Microporous Flow Host Structure layer of the package.

Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same

DOEpatents

Weng, Xiaojun; Goldman, Rachel S.

2006-06-06

A method for forming a semi-conductor material is provided that comprises forming a donor substrate constructed of GaAs, providing a receiver substrate, implanting nitrogen into the donor substrate to form an implanted layer comprising GaAs and nitrogen. The implanted layer is bonded to the receiver substrate and annealed to form GaAsN and nitrogen micro-blisters in the implanted layer. The micro-blisters allow the implanted layer to be cleaved from the donor substrate.

Turbine airfoil with dual wall formed from inner and outer layers separated by a compliant structure

DOEpatents

Campbell,; Christian X. , Morrison; Jay, A [Oviedo, FL

2011-12-20

A turbine airfoil usable in a turbine engine with a cooling system and a compliant dual wall configuration configured to enable thermal expansion between inner and outer layers while eliminating stress formation is disclosed. The compliant dual wall configuration may be formed a dual wall formed from inner and outer layers separated by a compliant structure. The compliant structure may be configured such that the outer layer may thermally expand without limitation by the inner layer. The compliant structure may be formed from a plurality of pedestals positioned generally parallel with each other. The pedestals may include a first foot attached to a first end of the pedestal and extending in a first direction aligned with the outer layer, and may include a second foot attached to a second end of the pedestal and extending in a second direction aligned with the inner layer.

Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

DOEpatents

Syn, C.K.; Lesuer, D.R.

1995-07-04

A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step. 5 figs.

Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

DOEpatents

Syn, Chol K.; Lesuer, Donald R.

1995-01-01

A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step.

Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits (13th) Held in Cabourg, France on 10-12 May 1989

DTIC Science & Technology

1989-05-12

USA Resonant tunneling transistors and New III-V memory devices for new circuit architectures with reduced complexity F. Capasso, Bell. Murray Hill...the evaporation, or by selective oxidation of As, leaving metallic Ga clusters and b) the interdiffusive deterioration of metal contacts on GaAs...VEB (My) Resonant Tunneling Transistors and New III-V Memory Devices for New Circuit Architectures with Reduced Complexity . Invited: F. Capasso

High Performance Brittle Matrices and Brittle Matrix Composites. Book 1

DTIC Science & Technology

1989-12-31

Intermetallic Alloys II, p . 27- 38, Stoloft, Koch, Liu, and Izumi (Eds.), MRS, 1986. [6] Cahn, R.W., Siemers, P.A., Geiger, J.E., Bardhan , P ., as-reported in ref...diagram were also useful in determining the interdiffusion coefficients of Ta and Al in the P phase. This information has been used for the studies on...from supercooling of the liquid droplets. This hypothesis was supported by the cross- over of the calculated T0 curves for the a, p and y phases in the

Rectenna that converts infrared radiation to electrical energy

DOEpatents

Davids, Paul; Peters, David W.

2016-09-06

Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

Electrode materials

DOEpatents

Amine, Khalil; Abouimrane, Ali; Belharouak, Ilias

2017-01-31

A process for forming a surface-treatment layer on an electroactive material includes heating the electroactive material and exposing the electroactive material to a reducing gas to form a surface-treatment layer on the electroactive material, where the surface-treatment layer is a layer of partial reduction of the electroactive material.

Fabrication of multilayered thin films via spin-assembly

DOEpatents

Chiarelli, Peter A.; Robinson, Jeanne M.; Casson, Joanna L.; Johal, Malkiat S.; Wang, Hsing-Lin

2007-02-20

An process of forming multilayer thin film heterostructures is disclosed and includes applying a solution including a first water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species onto a substrate to form a first coating layer on the substrate, drying the first coating layer on the substrate, applying a solution including a second water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species onto the substrate having the first coating layer to form a second coating layer on the first coating layer wherein the second water-soluble polymer is of a different material than the first water-soluble polymer, and drying the second coating layer on the first coating layer so as to form a bilayer structure on the substrate. Optionally, one or more additional applying and drying sequences can be repeated with a water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species, so that a predetermined plurality of layers are built up upon the substrate.

Systems and Methods for Fabricating Objects Including Amorphous Metal Using Techniques Akin to Additive Manufacturing

NASA Technical Reports Server (NTRS)

Hofmann, Douglas (Inventor)

2017-01-01

Systems and methods in accordance with embodiments of the invention fabricate objects including amorphous metals using techniques akin to additive manufacturing. In one embodiment, a method of fabricating an object that includes an amorphous metal includes: applying a first layer of molten metallic alloy to a surface; cooling the first layer of molten metallic alloy such that it solidifies and thereby forms a first layer including amorphous metal; subsequently applying at least one layer of molten metallic alloy onto a layer including amorphous metal; cooling each subsequently applied layer of molten metallic alloy such that it solidifies and thereby forms a layer including amorphous metal prior to the application of any adjacent layer of molten metallic alloy; where the aggregate of the solidified layers including amorphous metal forms a desired shape in the object to be fabricated; and removing at least the first layer including amorphous metal from the surface.

Solare Cell Roof Tile And Method Of Forming Same

DOEpatents

Hanoka, Jack I.; Real, Markus

1999-11-16

A solar cell roof tile includes a front support layer, a transparent encapsulant layer, a plurality of interconnected solar cells and a backskin layer. The front support layer is formed of light transmitting material and has first and second surfaces. The transparent encapsulant layer is disposed adjacent the second surface of the front support layer. The interconnected solar cells has a first surface disposed adjacent the transparent encapsulant layer. The backskin layer has a first surface disposed adjacent a second surface of the interconnected solar cells, wherein a portion of the backskin layer wraps around and contacts the first surface of the front support layer to form the border region. A portion of the border region has an extended width. The solar cell roof tile may have stand-offs disposed on the extended width border region for providing vertical spacing with respect to an adjacent solar cell roof tile.

Oxide film on metal substrate reduced to form metal-oxide-metal layer structure

NASA Technical Reports Server (NTRS)

Youngdahl, C. A.

1967-01-01

Electrically conductive layer of zirconium on a zirconium-oxide film residing on a zirconium substrate is formed by reducing the oxide in a sodium-calcium solution. The reduced metal remains on the oxide surface as an adherent layer and seems to form a barrier that inhibits further reaction.

Thermal insulating conformal blanket

NASA Technical Reports Server (NTRS)

Barney, Andrea (Inventor); Whittington, Charles A (Inventor); Eilertson, Bryan (Inventor); Siminski, Zenon (Inventor)

2003-01-01

The conformal thermal insulating blanket may have generally rigid batting material covered by an outer insulating layer formed of a high temperature resistant woven ceramic material and an inner insulating layer formed of a woven ceramic fiber material. The batting and insulating layers may be fastened together by sewing or stitching using an outer mold layer thread fabricated of a high temperature resistant material and an inner mold layer thread of a ceramic fiber material. The batting may be formed to a composite structure that may have a firmness factor sufficient to inhibit a pillowing effect after the stitching to not more than 0.03 inch. The outer insulating layer and an upper portion of the batting adjacent the outer insulating layer may be impregnated with a ceramic coating material.

Composite neutron absorbing coatings for nuclear criticality control

DOEpatents

Wright, Richard N.; Swank, W. David; Mizia, Ronald E.

2005-07-19

Thermal neutron absorbing composite coating materials and methods of applying such coating materials to spent nuclear fuel storage systems are provided. A composite neutron absorbing coating applied to a substrate surface includes a neutron absorbing layer overlying at least a portion of the substrate surface, and a corrosion resistant top coat layer overlying at least a portion of the neutron absorbing layer. An optional bond coat layer can be formed on the substrate surface prior to forming the neutron absorbing layer. The neutron absorbing layer can include a neutron absorbing material, such as gadolinium oxide or gadolinium phosphate, dispersed in a metal alloy matrix. The coating layers may be formed by a plasma spray process or a high velocity oxygen fuel process.

Thin film capillary process and apparatus

DOEpatents

Yu, Conrad M.

2003-11-18

Method and system of forming microfluidic capillaries in a variety of substrate materials. A first layer of a material such as silicon dioxide is applied to a channel etched in substrate. A second, sacrificial layer of a material such as a polymer is deposited on the first layer. A third layer which may be of the same material as the first layer is placed on the second layer. The sacrificial layer is removed to form a smooth walled capillary in the substrate.

Systems and methods for advanced ultra-high-performance InP solar cells

DOEpatents

Wanlass, Mark

2017-03-07

Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

Photovoltaic cell with nano-patterned substrate

DOEpatents

Cruz-Campa, Jose Luis; Zhou, Xiaowang; Zubia, David

2016-10-18

A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.; Martens, Jon S.; Plut, Thomas A.; Tigges, Chris P.; Vawter, Gregory A.; Zipperian, Thomas E.

1994-10-25

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

Process for forming epitaxial perovskite thin film layers using halide precursors

DOEpatents

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Multi-modality nanoparticles having optically responsive shape

DOEpatents

Chen, Fanqing; Bouchard, Louis-Serge

2015-05-19

In certain embodiments novel nanoparticles (nanowontons) are provided that are suitable for multimodal imaging and/or therapy. In one embodiment, the nanoparticles include a first biocompatible (e.g., gold) layer, an inner core layer (e.g., a non-biocompatible material), and a biocompatible (e.g., gold) layer. The first gold layer includes a concave surface that forms a first outer surface of the layered nanoparticle. The second gold layer includes a convex surface that forms a second outer surface of the layered nanoparticle. The first and second gold layers encapsulate the inner core material layer. Methods of fabricating such nanoparticles are also provided.

Method of fabricating a back-contact solar cell and device thereof

DOEpatents

Li, Bo; Smith, David; Cousins, Peter

2014-07-29

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Method of fabricating a back-contact solar cell and device thereof

DOEpatents

Li, Bo; Smith, David; Cousins, Peter

2016-08-02

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Vapochromic LED

DOEpatents

Kunugi, Yoshihito; Mann, Kent R.; Miller, Larry L.; Exstrom, Christopher L.

2003-06-17

A sandwich device was prepared by electrodeposition of an insoluble layer of oligomerized tris(4-(2-thienyl)phenyl)amine onto conducting indium-tin oxide coated glass, spin coating the stacked platinum compound, tetrakis(p-decylphenylisocyano)platinum tetranitroplatinate, from toluene onto the oligomer layer, and then coating the platinum complex with aluminum by vapor deposition. This device showed rectification of current and gave electroluminescence. The electroluminescence spectrum (.lambda..sub.max =545 nm) corresponded to the photoluminescence spectrum of the platinum complex. Exposure of the device to acetone vapor caused the electroemission to shift to 575 nm. Exposure to toluene vapor caused a return to the original spectrum. These results demonstrate a new type of sensor that reports the arrival of organic vapors with an electroluminescent signal. The sensor comprises (a) a first electrode; (b) a hole transport layer formed on the first electrode; (c) a sensing/emitting layer formed on the hole transport layer, the sensing/emitting layer comprising a material that changes color upon exposure to the analyte vapors; (d) an electron conductor layer formed on the sensing layer; and (e) a second electrode formed on the electron conductor layer. The hole transport layer emits light at a shorter wavelength than the sensing/emitting layer and at least the first electrode comprises an optically transparent material.

Vapochromic LED

DOEpatents

Kunugi, Yoshihito; Mann, Kent R.; Miller, Larry L.; Exstrom, Christopher L.

2002-01-15

A sandwich device was prepared by electrodeposition of an insoluble layer of oligomerized tris(4-(2-thienyl)phenyl)amine onto conducting indium-tin oxide coated glass, spin coating the stacked platinum compound, tetrakis(p-decylphenylisocyano)platinum tetranitroplatinate, from toluene onto the oligomer layer, and then coating the platinum complex with aluminum by vapor deposition. This device showed rectification of current and gave electroluminescence. The electroluminescence spectrum (.mu..sub.max =545 nm) corresponded to the photoluminescence spectrum of the platinum complex. Exposure of the device to acetone vapor caused the electroemission to shift to 575 nm. Exposure to toluene vapor caused a return to the original spectrum. These results demonstrate a new type of sensor that reports the arrival of organic vapors with an electroluminescent signal. The sensor comprises (a) a first electrode; (b) a hole transport layer formed on the first electrode; (c) a sensing/emitting layer formed on the hole transport layer, the sensing/emitting layer comprising a material that changes color upon exposure to the analyte vapors; (d) an electron conductor layer formed on the sensing layer; and (e) a second electrode formed on the electron conductor layer. The hole transport layer emits light at a shorter wavelength than the sensing/emitting layer and at least the first electrode comprises an optically transparent material.

Reduced Cu(InGa)Se 2 Thickness in Solar Cells Using a Superstrate Configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shafarman, William N.

This project by the Institute of Energy Conversion (IEC) and the Department of Electrical and Computer Engineering at the University of Delaware sought to develop the technology and underlying science to enable reduced cost of Cu(InGa)Se 2 manufacturing by reducing the thickness of the Cu(InGa)Se 2 absorber layer by half compared to typical production. The approach to achieve this was to use the superstrate cell configuration in which light is incident on the cell through the glass. This structure facilitates optical enhancement approaches needed to achieve high efficiency with Cu(InGa)Se 2 thicknesses less than 1 µm. The primary objective wasmore » to demonstrate a Cu(InGa)Se 2 cell with absorber thickness 0.5 - 0.7 µm and 17% efficiency, along with a quantitative loss analysis to define a pathway to 20% efficiency. Additional objectives were the development of stable TCO and buffer layers or contact layers to withstand the Cu(InGa)Se 2 deposition temperature and of advanced optical enhancement methods. The underlying fundamental science needed to effectively transition these outcomes to large scale was addressed by extensive materials and device characterization and by development of comprehensive optical models. Two different superstrate configurations have been investigated. A frontwall cell is illuminated through the glass to the primary front junction of the device. This configuration has been used for previous efforts on superstrate Cu(InGa)Se 2 but performance has been limited by interdiffusion or reaction with CdS or other buffer layers. In this project, several approaches to overcome these limitations were explored using CdS, ZnO and ZnSe buffer layers. In each case, mechanisms that limit device performance were identified using detailed characterization of the materials and junctions. Due to the junction formation difficulties, efforts were concentrated on a new backwall configuration in which light is incident through the substrate into the back of the absorber layer. The primary junction is then formed after Cu(InGa)Se 2 deposition. This allows the potential benefits of superstrate cells for optical enhancement while maintaining processing advantages of the substrate configuration and avoiding the harmful effects of high temperature deposition on p-n junction formation. Backwall devices have outperformed substrate cells at absorber thicknesses of 0.1-0.5 µm through enhanced JSC due to easy incorporation of a Ag reflector and, with light incident on the absorber, the elimination of parasitic absorption in the CdS buffer. An efficiency of 9.7% has been achieved for a backwall Cu(InGa)Se 2 device with absorber thickness ~0.4 μm. A critical achievement that enabled implementation of the backwall cell was the development of a transparent back contact using MoO 3 or WO 3. Processes for controlled deposition of each material by reactive rf sputtering from metal targets were developed. These contacts have wide bandgaps making them well-suited for application as contacts for backwall devices as well as potential use in bifacial cells and as the top cell of tandem CuInSe 2-based devices. Optical enhancement will be critical for further improvements. Wet chemical texturing of ZnO films has been developed for a simple, low cost light-trapping scheme for backwall superstrate devices to enhance long wavelength quantum efficiency. An aqueous oxalic acid etch was developed and found to strongly texture sputtered ZnO with high haze ≈ 0.9 observed across the whole spectrum. And finally, advanced optical models have been developed to assist the characterization and optimization of Cu(InGa)Se 2 cells with thin absorbers« less

Processes for multi-layer devices utilizing layer transfer

DOEpatents

Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

2015-02-03

A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

Inert electrode connection

DOEpatents

Weyand, J.D.; Woods, R.W.; DeYoung, D.H.; Ray, S.P.

1985-02-19

An inert electrode connection is disclosed wherein a layer of inert electrode material is bonded to a layer of conductive material by providing at least one intermediate layer of material therebetween comprising a predetermined ratio of inert material to conductive material. In a preferred embodiment, the connection is formed by placing in a die a layer of powdered inert material, at least one layer of a mixture of powdered inert material and conductive material, and a layer of powdered conductive material. The connection is then formed by pressing the material at 15,000--20,000 psi to form a powder compact and then densifying the powder compact in an inert or reducing atmosphere at a temperature of 1,200--1,500 C. 5 figs.

Microstructure and abrasive wear test of different composite layers formed by laser coating

NASA Astrophysics Data System (ADS)

Bartos, J.

1994-09-01

Layers containing different particles of different sizes (TiC: 2,7 micrometers and 31 micrometers mid size; TaC: 15 micrometers mid size) were formed on the surface of 90 MnCrV8 tool steel. A CO2-gas laser equipment was used to form these layers. The grain contents of the layers were between 35% - 55%. Some of the ready TiC layers were hardened by laser in order to reduce the retained amount. We compared the wear resistance of the layers employing abrasive wheel test. For reference purposes we carried out the test of traditionally hardened, traded TICALLOY II and TICALLOY W materials as well.

Buried anode lithium thin film battery and process for forming the same

DOEpatents

Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

2004-10-19

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

DOEpatents

Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

2014-11-25

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Single layer multi-color luminescent display and method of making

NASA Technical Reports Server (NTRS)

Robertson, James B. (Inventor)

1992-01-01

The invention is a multi-color luminescent display comprising an insulator substrate and a single layer of host material, which may be a phosphor deposited thereon that hosts one or more different impurities, therein forming a pattern of selected and distinctly colored phosphors such as blue, green, and red phosphors in a single layer of host material. Transparent electrical conductor means may be provided for subjecting selected portions of the pattern of colored phosphors to an electric field, thereby forming a multi-color, single layer electroluminescent display. A method of forming a multi-color luminescent display includes the steps of depositing on an insulator substrate a single layer of host material, which itself may be a phosphor, with the properties to host varying quantities of different impurities and introducing one or more of said different impurities into selected areas of the said single layer of host material by thermal diffusion or ion implantation to form a pattern of phosphors of different colors in the said single layer of host material.

Flexible packaging for microelectronic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Benjamin John; Nielson, Gregory N.; Cruz-Campa, Jose Luis

An apparatus, method, and system, the apparatus and system including a flexible microsystems enabled microelectronic device package including a microelectronic device positioned on a substrate; an encapsulation layer encapsulating the microelectronic device and the substrate; a protective layer positioned around the encapsulating layer; and a reinforcing layer coupled to the protective layer, wherein the substrate, encapsulation layer, protective layer and reinforcing layer form a flexible and optically transparent package around the microelectronic device. The method including encapsulating a microelectronic device positioned on a substrate within an encapsulation layer; sealing the encapsulated microelectronic device within a protective layer; and coupling themore » protective layer to a reinforcing layer, wherein the substrate, encapsulation layer, protective layer and reinforcing layer form a flexible and optically transparent package around the microelectronic device.« less

On the role of structure-dynamic relationship in determining the excess entropy of mixing and chemical ordering in binary square-well liquid alloys

NASA Astrophysics Data System (ADS)

Lalneihpuii, R.; Shrivastava, Ruchi; Mishra, Raj Kumar

2018-05-01

Using statistical mechanical model with square-well (SW) interatomic potential within the frame work of mean spherical approximation, we determine the composition dependent microscopic correlation functions, interdiffusion coefficients, surface tension and chemical ordering in Ag-Cu melts. Further Dzugutov universal scaling law of normalized diffusion is verified with SW potential in binary mixtures. We find that the excess entropy scaling law is valid for SW binary melts. The partial and total structure factors in the attractive and repulsive regions of the interacting potential are evaluated and then Fourier transformed to get partial and total radial distribution functions. A good agreement between theoretical and experimental values for total structure factor and the reduced radial distribution function are observed, which consolidates our model calculations. The well-known Bhatia-Thornton correlation functions are also computed for Ag-Cu melts. The concentration-concentration correlations in the long wavelength limit in liquid Ag-Cu alloys have been analytically derived through the long wavelength limit of partial correlation functions and apply it to demonstrate the chemical ordering and interdiffusion coefficients in binary liquid alloys. We also investigate the concentration dependent viscosity coefficients and surface tension using the computed diffusion data in these alloys. Our computed results for structure, transport and surface properties of liquid Ag-Cu alloys obtained with square-well interatomic interaction are fully consistent with their corresponding experimental values.

Concentration Gradient Immunoassay I. A Rapid Immunoassay Based on Interdiffusion and Surface Binding in a Microchannel

PubMed Central

Nelson, Kjell E.; Foley, Jennifer O.; Yager, Paul

2008-01-01

We describe a novel microfluidic immunoassay method based on the diffusion of a small molecule analyte into a parallel-flowing stream containing cognate antibody. This interdiffusion results in a steady-state gradient of antibody binding site occupancy transverse to convective flow. In contrast to the diffusion immunoassay (Hatch et al. Nature Biotechnology,19:461−465 (2001)), this antibody occupancy gradient is interrogated by a sensor surface coated with a functional analog of the analyte. Antibodies with at least one unoccupied binding site may specifically bind to this functionalized surface, leading to a quantifiable change in surface coverage by the antibody. SPR imaging is used to probe the spatial distribution of antibody binding to the surface and, therefore, the outcome of the assay. We show that the pattern of antibody binding to the SPR sensing surface correlates with the concentration of a model analyte (phenytoin) in the sample stream. Using an inexpensive disposable microfluidic device, we demonstrate assays for phenytoin ranging in concentration from 75 to 1000 nM in phosphate buffer. At a total volumetric flow rate of 90 nL/sec, the assays are complete within 10 minutes. Inclusion of an additional flow stream on the side of the antibody stream opposite to that of the sample enables simultaneous calibration of the assay. This assay method is suitable for rapid quantitative detection of low-molecular weight analytes for point-of-care diagnostic instrumentation. PMID:17437332

Layer-by-layer growth of vertex graph of Penrose tiling

NASA Astrophysics Data System (ADS)

Shutov, A. V.; Maleev, A. V.

2017-09-01

The growth form for the vertex graph of Penrose tiling is found to be a regular decagon. The lower and upper bounds for this form, coinciding with it, are strictly proven. A fractal character of layer-by-layer growth is revealed for some subgraphs of the vertex graph of Penrose tiling.

Anomalous Diffusion of Water in Lamellar Membranes Formed by Pluronic Polymers

NASA Astrophysics Data System (ADS)

Zhang, Zhe; Ohl, Michael; Han, Youngkyu; Smith, Gregory; Do, Changwoo; Biology; Soft-Matter Division, Oak Ridge National Laboratory Team; Julich CenterNeutron Science Team

Water diffusion is playing an important role in polymer systems. We calculated the water diffusion coefficient at different layers along z-direction which is perpendicular to the lamellar membrane formed by Pluronic block copolymers (L62: (EO6-PO34-EO6)) with the molecular dynamics simulation trajectories. Water molecules at bulk layers are following the normal diffusion, while that at hydration layers formed by polyethylene oxide (PEO) and hydrophobic layers formed by polypropylene oxide (PPO) are following anomalous diffusion. We find that although the subdiffusive regimes at PEO layers and PPO layers are the same, which is the fractional Brownian motion, however, the dynamics are different, i.e. diffusion at the PEO layers is much faster than that at the PPO layers, and meanwhile it exhibits a normal diffusive approximation within a short time period which is governed by the localized free self-diffusion, but becomes subdiffusive after t >8 ps, which is governed by the viscoelastic medium. The Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy; and Zhe Zhang gratefully acknowledges financial support from Julich Center for Neutron Science.

[Apatite-forming ability of pure titanium implant after micro-arc oxidation treatment].

PubMed

Tian, Zhihui; Zhang, Yu; Wang, Lichao; Nan, Kaihui

2013-10-01

To investigate the apatite forming ability of pure titanium implant after micro-arc oxidation treatment in simulated body fluid (SBF) and obtain implants with calcium phosphate (Ca-P) layers. The implants were immersed in (SBF) after micro-arc oxidation treatment for different time lengths, and their apatite forming ability and the morphology and constituents of the Ca-P layers formed on the sample surface were analyzed using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and energy dispersive electron probe. After immersion in SBF, large quantities of Ca-P layers were induced on the surface of the samples. The Ca-P layers were composed of octacalcium phosphate and carbonated hydroxyapatite, and the crystals showed a plate-like morphology with an oriented growth. The implants with micro-arc oxidation treatment show good apatite forming ability on the surface with rich calcium and phosphorus elements. The formed layers are composed of bone-like apatite including octacalcium phosphate and carbonated hydroxyapatite.

Method to fabricate high performance tubular solid oxide fuel cells

DOEpatents

Chen, Fanglin; Yang, Chenghao; Jin, Chao

2013-06-18

In accordance with the present disclosure, a method for fabricating a solid oxide fuel cell is described. The method includes forming an asymmetric porous ceramic tube by using a phase inversion process. The method further includes forming an asymmetric porous ceramic layer on a surface of the asymmetric porous ceramic tube by using a phase inversion process. The tube is co-sintered to form a structure having a first porous layer, a second porous layer, and a dense layer positioned therebetween.

Process of producing a ceramic matrix composite article and article formed thereby

DOE Office of Scientific and Technical Information (OSTI.GOV)

Corman, Gregory Scot; McGuigan, Henry Charles; Brun, Milivoj Konstantin

A CMC article and process for producing the article to have a layer on its surface that protects a reinforcement material within the article from damage. The method entails providing a body containing a ceramic reinforcement material in a matrix material that contains a precursor of a ceramic matrix material. A fraction of the reinforcement material is present and possibly exposed at a surface of the body. The body surface is then provided with a surface layer formed of a slurry containing a particulate material but lacking the reinforcement material of the body. The body and surface layer are heatedmore » to form the article by converting the precursor within the body to form the ceramic matrix material in which the reinforcement material is contained, and by converting the surface layer to form the protective layer that covers any fraction of the reinforcement material exposed at the body surface.« less

Process of producing a ceramic matrix composite article and article formed thereby

DOEpatents

Corman, Gregory Scot [Ballston Lake, NY; McGuigan, Henry Charles [Duanesburg, NY; Brun, Milivoj Konstantin [Ballston Lake, NY

2011-10-25

A CMC article and process for producing the article to have a layer on its surface that protects a reinforcement material within the article from damage. The method entails providing a body containing a ceramic reinforcement material in a matrix material that contains a precursor of a ceramic matrix material. A fraction of the reinforcement material is present and possibly exposed at a surface of the body. The body surface is then provided with a surface layer formed of a slurry containing a particulate material but lacking the reinforcement material of the body. The body and surface layer are heated to form the article by converting the precursor within the body to form the ceramic matrix material in which the reinforcement material is contained, and by converting the surface layer to form the protective layer that covers any fraction of the reinforcement material exposed at the body surface.

Bioactive Wollastonite-Diopside Foams from Preceramic Polymers and Reactive Oxide Fillers

PubMed Central

Fiocco, Laura; Elsayed, Hamada; Ferroni, Letizia; Gardin, Chiara; Zavan, Barbara; Bernardo, Enrico

2015-01-01

Wollastonite (CaSiO3) and diopside (CaMgSi2O6) silicate ceramics have been widely investigated as highly bioactive materials, suitable for bone tissue engineering applications. In the present paper, highly porous glass-ceramic foams, with both wollastonite and diopside as crystal phases, were developed from the thermal treatment of silicone polymers filled with CaO and MgO precursors, in the form of micro-sized particles. The foaming was due to water release, at low temperature, in the polymeric matrix before ceramic conversion, mainly operated by hydrated sodium phosphate, used as a secondary filler. This additive proved to be “multifunctional”, since it additionally favored the phase development, by the formation of a liquid phase upon firing, in turn promoting the ionic interdiffusion. The liquid phase was promoted also by the incorporation of powders of a glass crystallizing itself in wollastonite and diopside, with significant improvements in both structural integrity and crushing strength. The biological characterization of polymer-derived wollastonite-diopside foams, to assess the bioactivity of the samples, was performed by means of a cell culture test. The MTT assay and LDH activity tests gave positive results in terms of cell viability.

Kinetics of diffusional droplet growth in a liquid/liquid two-phase system

NASA Technical Reports Server (NTRS)

Baird, James K.; Cain, Judith B.

1993-01-01

This report contains experimental results for the interdiffusion coefficient of the system, succinonitrile plus water, at a number of compositions and temperatures in the single phase region of the phase diagram. The concentration and temperature dependence of the measured diffusion coefficient has been analyzed in terms of Landau - Ginzburg theory, which assumes that the Gibb free energy is an analytic function of its variables, and can be expanded in a Taylor series about any point in the phase diagram. At most points in the single phase region this is adequate. Near the consolute point (critical point of solution), however, the free energy is non-analytic, and the Landau - Ginzburg theory fails. The solution to this problem dictates that the Landau - Ginzburg form of the free energy be replaced by Widom scaling functions with irrational values for the scaling exponents. As our measurements of the diffusion coefficient near the critical point reflect this non-analytic character, we are preparing for publication in a refereed journal a separate analysis of some of the data contained herein as well as some additional measurements we have just completed. When published, reprints of this article will be furnished to NASA.

Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haight, Richard A.; Hannon, James B.; Oida, Satoshi

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Apparatus For Laminating Segmented Core For Electric Machine

DOEpatents

Lawrence, Robert Anthony; Stabel, Gerald R

2003-06-17

A segmented core for an electric machine includes segments stamped from coated electric steel. The segments each have a first end, a second end, and winding openings. A predetermined number of segments are placed end-to-end to form layers. The layers are stacked such that each of the layers is staggered from adjacent layers by a predetermined rotation angle. The winding openings of each of the layers are in vertical alignment with the winding openings of the adjacent layers. The stack of layers is secured to form the segmented core.

Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

DOEpatents

Hogan, S.J.

1983-03-13

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

Article and method for making an article

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacy, Benjamin Paul; Schick, David Edward; Kottilingam, Srikanth Chandrudu

An article and a method for making shaped cooling holes in an article are provided. The method includes the steps of providing a metal alloy powder; forming an initial layer with the metal alloy powder, the initial layer having a preselected thickness and a preselected shape, the preselected shape including at least one aperture; sequentially forming an additional layer over the initial layer with the metal alloy powder, the additional layer having a second preselected thickness and a second preselected shape, the second preselected shape including at least one aperture corresponding to the at least one aperture in the initialmore » layer; and joining the additional layer to the initial layer, forming a structure having a predetermined thickness, a predetermined shape, and at least one aperture having a predetermined profile. The structure is attached to a substrate to make the article.« less

Alkali resistant optical coatings for alkali lasers and methods of production thereof

DOEpatents

Soules, Thomas F; Beach, Raymond J; Mitchell, Scott C

2014-11-18

In one embodiment, a multilayer dielectric coating for use in an alkali laser includes two or more alternating layers of high and low refractive index materials, wherein an innermost layer includes a thicker, >500 nm, and dense, >97% of theoretical, layer of at least one of: alumina, zirconia, and hafnia for protecting subsequent layers of the two or more alternating layers of high and low index dielectric materials from alkali attack. In another embodiment, a method for forming an alkali resistant coating includes forming a first oxide material above a substrate and forming a second oxide material above the first oxide material to form a multilayer dielectric coating, wherein the second oxide material is on a side of the multilayer dielectric coating for contacting an alkali.

Electro-deposition of superconductor oxide films

DOEpatents

Bhattacharya, Raghu N.

2001-01-01

Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.