Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyu Sang

2017-09-01

In this work, the impact of trap states at the p-(Al)GaN/AlGaN interface has been investigated for the normally-off mode p-(Al)GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) by means of frequency dependent conductance. From the current-voltage (I-V) measurement, it was found that the p-AlGaN gate integrated device has higher drain current and lower gate leakage current compared to the p-GaN gate integrated device. We obtained the interface trap density and the characteristic time constant for the p-type gate integrated HFETs under the forward gate voltage of up to 6 V. As a result, the interface trap density (characteristic time constant) of the p-GaN gate device was lower (longer) than that of the p-AlGaN. Furthermore, it was analyzed that the trap state energy level of the p-GaN gate device was located at the shallow level relative to the p-AlGaN gate device, which accounts for different gate leakage current of each devices.

Characterization of Defects in Scaled Mis Dielectrics with Variable Frequency Charge Pumping

NASA Astrophysics Data System (ADS)

Paulsen, Ronald Eugene

1995-01-01

Historically, the interface trap has been extensively investigated to determine the effects on device performance. Recently, much attention has been paid to trapping in near-interface oxide traps. Performance of high precision analog circuitry is affected by charge trapping in near-interface oxide traps which produces hysteresis, charge redistribution errors, and dielectric relaxation effects. In addition, the performance of low power digital circuitry, with reduced noise margins, may be drastically affected by the threshold voltage shifts associated with charge trapping in near -interface oxide traps. Since near-interface oxide traps may substantially alter the performance of devices, complete characterization of these defects is necessary. In this dissertation a new characterization technique, variable frequency charge pumping, is introduced which allows charge trapped at the interface to be distinguished from the charge trapped within the oxide. The new experimental technique is an extension of the charge pumping technique to low frequencies such that tunneling may occur from interface traps to near-interface oxide traps. A generalized charge pumping model, based on Shockley-Read-Hall statistics and trap-to-trap tunneling theory, has been developed which allows a more complete characterization of near-interface oxide traps. A pair of coupled differential equations governing the rate of change of occupied interface and near-interface oxide traps have been developed. Due to the experimental conditions in the charge pumping technique the equations may be decoupled, leading to an equation governing the rate of change of occupied interface traps and an equation governing the rate of change of occcupied near-interface oxide traps. Solving the interface trap equation and applying non-steady state charge dynamics leads to an interface trap component of the charge pumping current. In addition, solution to the near-interface oxide trap equation leads to an additional oxide trap component to the charge pumping current. Numerical simulations have been performed to support the analytical development of the generalized charge pumping model. By varying the frequency of the applied charge pumping waveform and monitoring the charge recombined per cycle, the contributions from interface traps may be separated from the contributions of the near-interface oxide traps. The generalized charge pumping model allows characterization of the density and spatial distribution of near-interface oxide traps from this variable frequency charge pumping technique. Characterization of interface and near-interface oxide trap generation has been performed on devices exposed to ionizing radiation, hot electron injection, and high -field/Fowler-Nordheim stressing. Finally, using SONOS nonvolatile memory devices, a framework has been established for experimentally determining not only the spatial distribution of near-interface oxide traps, but also the energetic distribution. An experimental approach, based on tri-level charge pumping, is discussed which allows the energetic distribution of near-interface oxide traps to be determined.

Interface trapping in (2 ¯ 01 ) β-Ga2O3 MOS capacitors with deposited dielectrics

NASA Astrophysics Data System (ADS)

Jayawardena, Asanka; Ramamurthy, Rahul P.; Ahyi, Ayayi C.; Morisette, Dallas; Dhar, Sarit

2018-05-01

The electrical properties of interfaces and the impact of post-deposition annealing have been investigated in gate oxides formed by low pressure chemical vapor deposition (LPCVD SiO2) and atomic layer deposition (Al2O3) on ( 2 ¯ 01 ) oriented n-type β-Ga2O3 single crystals. Capacitance-voltage based methods have been used to extract the interface state densities, including densities of slow `border' traps at the dielectric-Ga2O3 interfaces. It was observed that SiO2-β-Ga2O3 has a higher interface and border trap density than the Al2O3-β-Ga2O3. An increase in shallow interface states was also observed at the Al2O3-β-Ga2O3 interface after post-deposition annealing at higher temperature suggesting the high temperature annealing to be detrimental for Al2O3-Ga2O3 interfaces. Among the different dielectrics studied, LPCVD SiO2 was found to have the lowest dielectric leakage and the highest breakdown field, consistent with a higher conduction band-offset. These results are important for the processing of high performance β-Ga2O3 MOS devices as these factors will critically impact channel transport, threshold voltage stability, and device reliability.

Effect of Temperature on Formation and Stability of Shallow Trap at a Dielectric Interface of the Multilayer

NASA Astrophysics Data System (ADS)

Rogti, F.

2015-12-01

Space-charge behavior at dielectric interfaces in multilayer low-density polyethylene (LDPE) and fluorinated ethylene propylene (FEP) subjected to a direct-current (DC) field has been investigated as a function of temperature using the pulsed electroacoustic technique. A sandwich structure constituted by two nonidentical LDPE/FEP dielectric films was used to study the charging propensity of electrode/dielectric and dielectric/dielectric interfaces. The time dependence of the space-charge distribution was subsequently recorded at four temperatures, 20°C, 25°C, 40°C, and 60°C, under field (polarization) and short-circuit (depolarization) conditions. The experimental results demonstrate that temperature plays a significant role in the space-charge dynamics at the dielectric interface. It affects the charge injection, increases the charge mobility and electrical conductivity, and increases the density of shallow traps and trap filling. It is found that traps formed during polarization at high temperature do not remain stable after complete discharge of the multidielectric structure and when poled at low temperatures.

Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory.

PubMed

Kim, Seung-Yoon; Park, Jong Kyung; Hwang, Wan Sik; Lee, Seung-Jun; Lee, Ki-Hong; Pyi, Seung Ho; Cho, Byung Jin

2016-05-01

We investigated the dependence of grain size on the performance of a polycrystalline silicon (poly-Si) channel TFT for application to 3D NAND Flash memory devices. It has been found that the device performance and memory characteristics are strongly affected by the grain size of the poly-Si channel. Higher on-state current, faster program speed, and poor endurance/reliability properties are observed when the poly-Si grain size is large. These are mainly attributed to the different local electric field induced by an oxide valley at the interface between the poly-Si channel and the gate oxide. In addition, the trap density at the gate oxide interface was successfully measured using a charge pumping method by the separation between the gate oxide interface traps and traps at the grain boundaries in the poly-Si channel. The poly-Si channel with larger grain size has lower interface trap density.

Interface investigation of solution processed high- κ ZrO2/Si MOS structure by DLTS

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Rao, Ksr Koteswara

The interfacial region is dominating due to the continuous downscaling and integration of high- k oxides in CMOS applications. The accurate characterization of high- k oxides/semiconductor interface has the significant importance towards its usage in memory and thin film devices. The interface traps at the high - k /semiconductor interface can be quantified by deep level transient spectroscopy (DLTS) with better accuracy in contrast to capacitance-voltage (CV) and conductance technique. We report the fabrication of high- k ZrO2 films on p-Si substrate by a simple and inexpensive sol-gel spin-coating technique. Further, the ZrO2/Si interface is characterized through DLTS. The flat-band voltage (VFB) and the density of slow interface states (oxide trapped charges) extracted from CV characteristics are 0.37 V and 2x10- 11 C/cm2, respectively. The activation energy, interface state density and capture cross-section quantified by DLTS are EV + 0.42 eV, 3.4x1011 eV- 1 cm- 2 and 5.8x10- 18 cm2, respectively. The high quality ZrO2 films own high dielectric constant 15 with low leakage current density might be an appropriate insulating layer in future electronic application. The low value of interface state density and capture cross-section are the indication of high quality interface and the defect present at the interface may not affect the device performance to a great extent. The DLTS study provides a broad understanding about the traps present at the interface of spin-coated ZrO2/Si.

Electrical properties of MOS devices fabricated on the 4H-SiC C-face.

NASA Astrophysics Data System (ADS)

Chen, Zengjun; Ahyi, A. C.; Williams, J. R.

2007-11-01

The electrical characteristics of MOS devices fabricated on the carbon face of 4H-SiC will be described. The C-face has a higher oxidation rate and a higher interface trap density compared to the Si-face. The thermal oxidation rate and the distribution of interface traps under different oxidation conditions will be discussed in this presentation. Sequential post-oxidation anneals in nitric oxide and hydrogen effectively reduces the interface density (Dit) near the conduction band edge. However, deeper in the band gap, the trap density remains higher compared to the Si-face. Time-dependent dielectric breakdown (TDDB) studies have also been performed to investigate oxide reliability on the C-face, and current-voltage measurements show that a low barrier height against carrier injection likely contributes to oxide degradation. Nevertheless, the effective channel mobility and threshold voltage for n-channel C-face lateral MOSFETs compare favorably with similar Si-face devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fayolle, M.; Yamaguchi, M.; Ohto, T.

Organic magnetoresistance (OMAR) can be caused by either single carrier (bipolaron) or double carriers (electron-hole)-based mechanisms. In order to consider applications for OMAR, it is important to control the mechanism present in the device. In this paper, we report the effect of traps on OMAR resulting of disorder at the interface between the organic active layer with the hole injection layer [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate): PEDOT:PSS]. It has been found that while the single carriers OMAR is enhanced by the presence of traps, the double carriers OMAR is totally removed in a sample with a high interface trap density. The reasons formore » these results are discussed based on the impedance spectroscopy measurements. First, the mechanism (single or double carriers) responsible of the OMAR was determined with the support of the capacitance measurement. Then, the influence of traps was discussed with the Nyquist diagrams and phase angle-frequency plots of the samples. The results suggested that with a rough interface and thus high disorder, the presence of traps enhanced the bipolaron formation. Traps also acted as recombination centers for electron-hole pairs, which prevented the double carriers OMAR in devices with a rough interface. On the other hand, with a low trap density, i.e., with a smooth surface, the single carrier OMAR decreased, and double carriers OMAR appeared. The sign of the OMAR could then be controlled by simply sweeping the bias voltage. This work demonstrated that the roughness at the interface is important for controlling OMAR and its reproducibility, and that the combination of OMAR measurement and impedance spectroscopy is helpful for clarifying the processes at the interface.« less

Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET

NASA Astrophysics Data System (ADS)

Yin, Ruiyuan; Li, Yue; Sun, Yu; Wen, Cheng P.; Hao, Yilong; Wang, Maojun

2018-06-01

We report the effect of the gate recess process and the surface of as-etched GaN on the gate oxide quality and first reveal the correlation between border traps and exposed surface properties in normally-off Al2O3/GaN MOSFET. The inductively coupled plasma (ICP) dry etching gate recess with large damage presents a rough and active surface that is prone to form detrimental GaxO validated by atomic force microscopy and X-ray photoelectron spectroscopy. Lower drain current noise spectral density of the 1/f form and less dispersive ac transconductance are observed in GaN MOSFETs fabricated with oxygen assisted wet etching compared with devices based on ICP dry etching. One decade lower density of border traps is extracted in devices with wet etching according to the carrier number fluctuation model, which is consistent with the result from the ac transconductance method. Both methods show that the density of border traps is skewed towards the interface, indicating that GaxO is of higher trap density than the bulk gate oxide. GaxO located close to the interface is the major location of border traps. The damage-free oxidation assisted wet etching gate recess technique presents a relatively smooth and stable surface, resulting in lower border trap density, which would lead to better MOS channel quality and improved device reliability.

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

NASA Technical Reports Server (NTRS)

Hoenk, M. E.; Carver, A.; Jones, T.; Dickie, M.; Cheng, P.; Greer, H. F.; Nikzad, S.; Sgro, J.

2013-01-01

In this paper, we present experimental results and band structure calculations that illuminate the unique properties of superlattice-doped detectors. Numerical band structure calculations are presented to analyze the dependencies of surface passivation on dopant profiles and interface trap densities (Figure 3). Experiments and calculations show that quantum-engineered surfaces, grown at JPL by low temperature molecular beam epitaxy, achieve a qualitative as well as quantitative uniqueness in their near-immunity to high densities of surface and interface traps.

Charge Trapping in Interface Doped MNOS Structures.

DTIC Science & Technology

1981-07-01

Current density 55 0 JN Current density in nitride at gate 55 k Boltzmann’s constant: 1.38 x 10-23 joule /0K 85 m Effective mass of carrier 89 xi MIS...Trap Barrier Lowering by Applied Field: Poole-Frenkel Effect 90 vi Figure 3- 2: Thermally Stimulated Current System 92 Figure 3- 3: TSC Curves from a...Tungsten Atomic Concentration vs Effective Thickness 175 ix List of Tables Table 1-1: Trap Energy Levels and Spatial Densities 31 Table 2-1: Device

Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer

NASA Astrophysics Data System (ADS)

Greene, Andrew; Madisetti, Shailesh; Nagaiah, Padmaja; Yakimov, Michael; Tokranov, Vadim; Moore, Richard; Oktyabrsky, Serge

2012-12-01

The highly reactive GaSb surface was passivated with a thin InAs layer to limit interface trap state density (Dit) at the III-V/high-k oxide interface. This InAs surface was subjected to various cleaning processes to effectively reduce native oxides before atomic layer deposition (ALD). Ammonium sulfide pre-cleaning and trimethylaluminum/water ALD were used in conjunction to provide a clean interface and annealing in forming gas (FG) at 350 °C resulted in an optimized fabrication for n-GaSb/InAs/high-k gate stacks. Interface trap density, Dit ≈ 2-3 × 1012 cm-2eV-1 resided near the n-GaSb conductance band which was extracted and compared with three different methods. Conductance-voltage-frequency plots showed efficient Fermi level movement and a sub-threshold slope of 200 mV/dec. A composite high-k oxide process was also developed using ALD of Al2O3 and HfO2 resulting in a Dit ≈ 6-7 × 1012 cm-2eV-1. Subjecting these samples to a higher (450 °C) processing temperature results in increased oxidation and a thermally unstable interface. p-GaSb displayed very fast minority carrier generation/recombination likely due to a high density of bulk traps in GaSb.

Investigation of Oxygen and Hydrogen Associated Charge Trapping and Electrical Characteristics of Silicon Nitride Films for Mnos Devices.

NASA Astrophysics Data System (ADS)

Xu, Dan

Silicon nitride (Si_3N _4) and silicon oxynitride (SiO _{rm x}N_ {rm y}) films in the form of metal -nitride-oxide-silicon (MNOS) structures were investigated to determine the correlation between their electrical characteristics and the nature of the chemical bonding so as to provide guidelines for the next generation of nonvolatile memory devices. The photoionization cross section of electron traps in the oxynitride films of MNOS devices were also measured as a function photon energy and oxygen concentration of the silicon oxynitride films. An effective photoionization cross section associated with electron traps was determined to be between 4.9 times 10 ^{-19} cm^2 to 10.8 times 10^ {-19} cm^2 over the photon energy of 2.06 eV to 3.1 eV for silicon oxynitride films containing 7 atomic % to 17 atomic % of oxygen. The interface state density of metal-nitride-oxide -silicon (MNOS) devices was investigated as a function of processing conditions. The interface state density around the midgap of the oxide-silicon interface of the MNOS structures for deposition temperature between 650^ circC to 850^circC increased from 1.1 to 8.2 times 10 ^{11} cm^ {-2}eV^{-1}, for as-deposited silicon nitride films; but decreased from 5.0 to 3.5 times 10^ {11} cm^{-2} eV^{-1}, for films annealed in nitrogen at 900^circC for 60 minutes; and further decreased and remained constant at 1.5 times 10^{11 } cm^{-2}eV ^{-1}, for films which were further annealed in hydrogen at 900^ circC for an additional 60 minutes. The interface state density increase was due to an increase in the loss of hydrogen at the interfacial region and also due to an increase in the thermal stress caused by differences in thermal expansion coefficients of silicon nitride and silicon dioxide films at higher deposition temperatures. The interface state density was subject to two opposing influences; an increase by thermal stress, and a reduction by hydrogen compensation of these states. The photocurrent-voltage (photoI-V) technique in combination with internal photo-electric technique were employed to determine the trapped charge density and its centroid as a function of processing conditions. Results showed that the trapped charge density was of the order of 10^{18} cm ^{-3}. However, the charge trapping density increased about 30% as the atomic percentage of hydrogen decreased from 6 to 2 atomic %.

Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene.

PubMed

Park, Byoungnam; Whitham, Kevin; Bian, Kaifu; Lim, Yee-Fun; Hanrath, Tobias

2014-12-21

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

NASA Astrophysics Data System (ADS)

Khosa, R. Y.; Thorsteinsson, E. B.; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, E. Ö.

2018-02-01

We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation

NASA Astrophysics Data System (ADS)

Jayawardena, Asanka; Shen, X.; Mooney, P. M.; Dhar, Sarit

2018-06-01

Interfacial charge trapping in 4H–SiC MOS capacitors with P doped SiO2 or phospho-silicate glass (PSG) as a gate dielectric has been investigated with temperature dependent capacitance–voltage measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements. The measurements indicate that P doping in the dielectric results in significant reduction of near-interface electron traps that have energy levels within 0.5 eV of the 4H–SiC conduction band edge. Extracted trap densities confirm that the phosphorus induced near-interface trap reduction is significantly more effective than interfacial nitridation, which is typically used for 4H–SiC MOSFET processing. The CCDLTS measurements reveal that the two broad near-interface trap peaks, named ‘O1’ and ‘O2’, with activation energies around 0.15 eV and 0.4 eV below the 4H–SiC conduction band that are typically observed in thermal oxides on 4H–SiC, are also present in PSG devices. Previous atomic scale ab initio calculations suggested these O1 and O2 traps to be carbon dimers substituted for oxygen dimers (CO=CO) and interstitial Si (Sii) in SiO2, respectively. Theoretical considerations in this work suggest that the presence of P in the near-interfacial region reduces the stability of the CO=CO defects and reduces the density of Sii defects through the network restructuring. Qualitative comparison of results in this work and reported work suggest that the O1 and O2 traps in SiO2/4H–SiC MOS system negatively impact channel mobility in 4H–SiC MOSFETs.

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

NASA Astrophysics Data System (ADS)

Lagger, P.; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J.; Pogany, D.; Ostermaier, C.

2014-07-01

The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔVth, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness tD and barrier thickness tB, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔNit, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔNit is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs

NASA Astrophysics Data System (ADS)

Lechaux, Y.; Fadjie, A.; Bollaert, S.; Talbo, V.; Mateos, J.; González, T.; Vasallo, B. G.; Wichmann, N.

2015-10-01

In this work, Metal - Oxide - Semiconductor Capacitors (MOSCaps) based on Al2O3/ n-Ga0.47In0.53As interface have been studied. In order to have high MOSFETs performance, it is necessary to improve the semiconductor - oxide interface quality. It is observed that the (NH4)2S passivation shows lower interface trap density in the order of 6×1011cm-2.eV-1. Also, it is observed that O2 plasma densification after a passivation in a NH4OH solution improves the electrical behaviour of the charge control. Low interface trap density in the order of 1×1012cm-2.eV-1 was obtained for different treatments presented in this work.

Hydrogen interaction with ferrite/cementite interface: ab initio calculations and thermodynamics

NASA Astrophysics Data System (ADS)

Mirzoev, A. A.; Verkhovykh, A. V.; Okishev, K. Yu.; Mirzaev, D. A.

2018-02-01

The paper presents the results of ab initio modelling of the interaction of hydrogen atoms with ferrite/cementite interfaces in steels and thermodynamic assessment of the ability of interfaces to trap hydrogen atoms. Modelling was performed using the density functional theory with generalised gradient approximation (GGA'96), as implemented in WIEN2k package. An Isaichev-type orientation relationship between the two phases was accepted, with a habit plane (101)c ∥ (112)α. The supercell contained 64 atoms (56 Fe and 8 C). The calculated formation energies of ferrite/cementite interface were 0.594 J/m2. The calculated trapping energy at cementite interstitial was 0.18 eV, and at the ferrite/cementite interface - 0.30 eV. Considering calculated zero-point energy, the trapping energies at cementite interstitial and ferrite/cementite interface become 0.26 eV and 0.39 eV, respectively. The values are close to other researchers' data. These results were used to construct a thermodynamic description of ferrite/cementite interface-hydrogen interaction. Absorption calculations using the obtained trapping energy values showed that even thin lamellar ferrite/cementite mixture with an interlamellar spacing smaller than 0.1 μm has noticeable hydrogen trapping ability at a temperature below 400 K.

Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.

PubMed

Zhernokletov, Dmitry M; Negara, Muhammad A; Long, Rathnait D; Aloni, Shaul; Nordlund, Dennis; McIntyre, Paul C

2015-06-17

We correlate interfacial defect state densities with the chemical composition of the Al2O3/GaN interface in metal-oxide-semiconductor (MOS) structures using synchrotron photoelectron emission spectroscopy (PES), cathodoluminescence and high-temperature capacitance-voltage measurements. The influence of the wet chemical pretreatments involving (1) HCl+HF etching or (2) NH4OH(aq) exposure prior to atomic layer deposition (ALD) of Al2O3 were investigated on n-type GaN (0001) substrates. Prior to ALD, PES analysis of the NH4OH(aq) treated surface shows a greater Ga2O3 component compared to either HCl+HF treated or as-received surfaces. The lowest surface concentration of oxygen species is detected on the acid etched surface, whereas the NH4OH treated sample reveals the lowest carbon surface concentration. Both surface pretreatments improve electrical characteristics of MOS capacitors compared to untreated samples by reducing the Al2O3/GaN interface state density. The lowest interfacial trap density at energies in the upper band gap is detected for samples pretreated with NH4OH. These results are consistent with cathodoluminescence data indicating that the NH4OH treated samples show the strongest band edge emission compared to as-received and acid etched samples. PES results indicate that the combination of reduced carbon contamination while maintaining a Ga2O3 interfacial layer by NH4OH(aq) exposure prior to ALD results in fewer interface traps after Al2O3 deposition on the GaN substrate.

High temperature 1 MHz capacitance-voltage method for evaluation of border traps in 4H-SiC MOS system

NASA Astrophysics Data System (ADS)

Peng, Zhao-Yang; Wang, Sheng-Kai; Bai, Yun; Tang, Yi-Dan; Chen, Xi-Ming; Li, Cheng-Zhan; Liu, Ke-An; Liu, Xin-Yu

2018-04-01

In this work, border traps located in SiO2 at different depths in 4H-SiC MOS system are evaluated by a simple and effective method based on capacitance-voltage (C-V) measurements. This method estimates the border traps between two adjacent depths through C-V measurement at various frequencies at room and elevated temperatures. By comparison of these two C-V characteristics, the correlation between time constant of border traps and temperatures is obtained. Then the border trap density is determined by integration of capacitance difference against gate voltage at the regions where border traps dominate. The results reveal that border trap concentration a few nanometers away from the interface increases exponentially towards the interface, which is in good agreement with previous work. It has been proved that high temperature 1 MHz C-V method is effective for border trap evaluation.

Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Otani, Yohei; Toyota, Hiroshi; Ono, Toshiro

2011-07-01

We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The interface trap density (Dit) measured by the conductance method is found to be distributed symmetrically in the Ge band gap with a minimum Dit value lower than 3 × 1011 cm-2eV-1 near the midgap. This result may lead to the development of processes for the fabrication of p- and n-Ge Schottky-barrier (SB) source/drain metal-insulator-semiconductor field-effect transistors using chemically and thermally robust GeNx dielectrics as interlayers for SB source/drain contacts and high-κ gate dielectrics.

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locatemore » in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babadi, A. S., E-mail: aein.shiri-babadi@eit.lth.se; Lind, E.; Wernersson, L. E.

A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holesmore » even in depletion, so a full charge treatment is necessary.« less

Interface traps and quantum size effects on the retention time in nanoscale memory devices

PubMed Central

2013-01-01

Based on the analysis of Poisson equation, an analytical surface potential model including interface charge density for nanocrystalline (NC) germanium (Ge) memory devices with p-type silicon substrate has been proposed. Thus, the effects of Pb defects at Si(110)/SiO2, Si(111)/SiO2, and Si(100)/SiO2 interfaces on the retention time have been calculated after quantum size effects have been considered. The results show that the interface trap density has a large effect on the electric field across the tunneling oxide layer and leakage current. This letter demonstrates that the retention time firstly increases with the decrease in diameter of NC Ge and then rapidly decreases with the diameter when it is a few nanometers. This implies that the interface defects, its energy distribution, and the NC size should be seriously considered in the aim to improve the retention time from different technological processes. The experimental data reported in the literature support the theoretical expectation. PMID:23984827

Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

NASA Astrophysics Data System (ADS)

Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

2018-04-01

Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

films on silicon at different annealing temperatures

NASA Astrophysics Data System (ADS)

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-01

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density ( Q f) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q f can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Q f obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Q f. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiO x /Si interface region decreased with increased temperature. Measurement results of Q f proved that the Al vacancy of the bulk film may not be related to Q f. The defect density in the SiO x region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

Electrical properties of radio-frequency sputtered HfO2 thin films for advanced CMOS technology

NASA Astrophysics Data System (ADS)

Sarkar, Pranab Kumar; Roy, Asim

2015-08-01

The Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO2 film have been studied employing Al/HfO2/p-Si metal-oxide-semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO2 film is obtained as 23,7.57×1011eV-1 cm-2 and 2.7×10-5 Acm-2, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics

NASA Astrophysics Data System (ADS)

Basile, A. F.; Cramer, T.; Kyndiah, A.; Biscarini, F.; Fraboni, B.

2014-06-01

Metal-oxide-semiconductor (MOS) transistors fabricated with pentacene thin films were characterized by temperature-dependent current-voltage (I-V) characteristics, time-dependent current measurements, and admittance spectroscopy. The channel mobility shows almost linear variation with temperature, suggesting that only shallow traps are present in the semiconductor and at the oxide/semiconductor interface. The admittance spectra feature a broad peak, which can be modeled as the sum of a continuous distribution of relaxation times. The activation energy of this peak is comparable to the polaron binding energy in pentacene. The absence of trap signals in the admittance spectra confirmed that both the semiconductor and the oxide/semiconductor interface have negligible density of deep traps, likely owing to the passivation of SiO2 before pentacene growth. Nevertheless, current instabilities were observed in time-dependent current measurements following the application of gate-voltage pulses. The corresponding activation energy matches the energy of a hole trap in SiO2. We show that hole trapping in the oxide can explain both the temperature and the time dependences of the current instabilities observed in pentacene MOS transistors. The combination of these experimental techniques allows us to derive a comprehensive model for charge transport in hybrid architectures where trapping processes occur at various time and length scales.

Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors

NASA Astrophysics Data System (ADS)

Zhang, Xufang; Okamoto, Dai; Hatakeyama, Tetsuo; Sometani, Mitsuru; Harada, Shinsuke; Iwamuro, Noriyuki; Yano, Hiroshi

2018-06-01

The impact of oxide thickness on the density distribution of near-interface traps (NITs) in SiO2/4H-SiC structure was investigated. We used the distributed circuit model that had successfully explained the frequency-dependent characteristics of both capacitance and conductance under strong accumulation conditions for SiO2/4H-SiC MOS capacitors with thick oxides by assuming an exponentially decaying distribution of NITs. In this work, it was found that the exponentially decaying distribution is the most plausible approximation of the true NIT distribution because it successfully explained the frequency dependences of capacitance and conductance under strong accumulation conditions for various oxide thicknesses. The thickness dependence of the NIT density distribution was also characterized. It was found that the NIT density increases with increasing oxide thickness, and a possible physical reason was discussed.

Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements.

PubMed

Kim, Seongmin; Kim, Hwansoo; Janes, David B; Ju, Sanghyun

2013-08-02

Due to the large surface-to-volume ratio of nanowires, the quality of nanowire-insulator interfaces as well as the nanowire surface characteristics significantly influence the electrical characteristics of nanowire transistors (NWTs). To improve the electrical characteristics by doping or post-processing, it is important to evaluate the interface characteristics and stability of NWTs. In this study, we have synthesized ZnSnO (ZTO) nanowires using the chemical vapor deposition method, characterized the composition of ZTO nanowires using x-ray photoelectron spectroscopy, and fabricated ZTO NWTs. We have characterized the current-voltage characteristics and low-frequency noise of ZTO NWTs in order to investigate the effects of interface states on subthreshold slope (SS) and the noise before and after N2 plasma treatments. The as-fabricated device exhibited a SS of 0.29 V/dec and Hooge parameter of ~1.20 × 10(-2). Upon N2 plasma treatment with N2 gas flow rate of 40 sccm (20 sccm), the SS improved to 0.12 V/dec (0.21 V/dec) and the Hooge parameter decreased to ~4.99 × 10(-3) (8.14 × 10(-3)). The interface trap densities inferred from both SS and low-frequency noise decrease upon plasma treatment, with the highest flow rate yielding the smallest trap density. These results demonstrate that the N2 plasma treatment decreases the interface trap states and defects on ZTO nanowires, thereby enabling the fabrication of high-quality nanowire interfaces.

Interfacial Charge-Carrier Trapping in CH3NH3PbI3-Based Heterolayered Structures Revealed by Time-Resolved Photoluminescence Spectroscopy.

PubMed

Yamada, Yasuhiro; Yamada, Takumi; Shimazaki, Ai; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

2016-06-02

The fast-decaying component of photoluminescence (PL) under very weak pulse photoexcitation is dominated by the rapid relaxation of the photoexcited carriers into a small number of carrier-trapping defect states. Here, we report the subnanosecond decay of the PL under excitation weaker than 1 nJ/cm(2) both in CH3NH3PbI3-based heterostructures and bare thin films. The trap-site density at the interface was evaluated on the basis of the fluence-dependent PL decay profiles. It was found that high-density defects determining the PL decay dynamics are formed near the interface between CH3NH3PbI3 and the hole-transporting Spiro-OMeTAD but not at the CH3NH3PbI3/TiO2 interface and the interior regions of CH3NH3PbI3 films. This finding can aid the fabrication of high-quality heterointerfaces, which are required improving the photoconversion efficiency of perovskite-based solar cells.

Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors

NASA Astrophysics Data System (ADS)

Karamoto, Yuki; Zhang, Xufang; Okamoto, Dai; Sometani, Mitsuru; Hatakeyama, Tetsuo; Harada, Shinsuke; Iwamuro, Noriyuki; Yano, Hiroshi

2018-06-01

We used a conductance method to investigate the interface characteristics of a SiO2/p-type 4H-SiC MOS structure fabricated by dry oxidation. It was found that the measured equivalent parallel conductance–frequency (G p/ω–f) curves were not symmetric, showing that there existed both high- and low-frequency signals. We attributed high-frequency responses to fast interface states and low-frequency responses to near-interface oxide traps. To analyze the fast interface states, Nicollian’s standard conductance method was applied in the high-frequency range. By extracting the high-frequency responses from the measured G p/ω–f curves, the characteristics of the low-frequency responses were reproduced by Cooper’s model, which considers the effect of near-interface traps on the G p/ω–f curves. The corresponding density distribution of slow traps as a function of energy level was estimated.

Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, J.-S.; Tyryshkin, A. M.; Lyon, S. A.

2017-03-01

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO2 interface. Here, we show that a forming gas anneal is effective at removing shallow defects (≤4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors. One set was irradiated with an electron-beam (10 keV, 40 μC/cm2) and was subsequently annealed in forming gas while the other set remained unexposed. Low temperature (335 mK) transport measurements indicate that the forming gas anneal recovers the e-beam exposed sample's peak mobility (14 000 cm2/Vs) to within a factor of two of the unexposed sample's mobility (23 000 cm2/Vs). Using electron spin resonance (ESR) to measure the density of shallow traps, we find that the two sets of devices are nearly identical, indicating the forming gas anneal is sufficient to anneal out shallow defects generated by the e-beam exposure. Fitting the two sets of devices' transport data to a percolation transition model, we extract a T = 0 percolation threshold density in quantitative agreement with our lowest temperature ESR-measured trap densities.

Effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ganesh, K. C. P.; Nagesha, Y. N.; Umakanth, D.; Arora, S. K.; Siddappa, K.

The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (V-TH), the voltage shift due to interface trapped charge (DeltaV(Nit)), the voltage shift due to oxide trapped charge (DeltaV(Not)), the density of interface trapped charge (DeltaN(it)), the density of oxide trapped charge (DeltaN(ot) ) and the drain saturation current (I-D Sat) were studied as a function of fluence. Considerable increase in DeltaN(it) and DeltaN(ot) , and decrease in V-TH and I-D Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 degreesC.

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

PubMed

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-02

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures

PubMed Central

2013-01-01

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C. PMID:23452508

Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

NASA Astrophysics Data System (ADS)

Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

2017-12-01

III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

NASA Astrophysics Data System (ADS)

Zeng, Ke; Singisetti, Uttam

2017-09-01

The interface trap density (Dit) of the SiO2/β-Ga2O3 interface in ( 2 ¯ 01), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of Dit in the bandgap. At room temperature, higher Dit is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the Dit value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.

Identification of microscopic hole-trapping mechanisms in nitride semiconductors

DOE PAGES

John L. Lyons; Krishnaswamy, Karthik; Luke Gordon; ...

2015-12-17

Hole trapping has been observed in nitride heterostructure devices, where the Fermi level is in the vicinity of the valence-band maximum. Using hybrid density functional calculations, we examine microscopic mechanisms for hole trapping in GaN and AlN. In a defect-free material, hole trapping does not spontaneously occur, but trapping can occur in the vicinity of impurities, such as C-a common unintentional impurity in nitrides. As a result, using Schrodinger-Poisson simulations, we assess the effects of C-derived hole traps on N-face high-electron mobility transistors, which we find to be more detrimental than the previously proposed interface traps.

Determination of trap distributions from current characteristics of pentacene field-effect transistors with surface modified gate oxide

NASA Astrophysics Data System (ADS)

Scheinert, Susanne; Pernstich, Kurt P.; Batlogg, Bertram; Paasch, Gernot

2007-11-01

It has been demonstrated [K. P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D. J. Gundlach, B. Batlogg, A. N. Rashid, and G. Schitter, J. Appl. Phys. 96, 6431 (2004)] that a controllable shift of the threshold voltage in pentacene thin film transistors is caused by the use of organosilanes with different functional groups forming a self-assembled monolayer (SAM) on the gate oxide. The observed broadening of the subthreshold region indicates that the SAM creates additional trap states. Indeed, it is well known that traps strongly influence the behavior of organic field-effect transistors (OFETs). Therefore, the so-called "amorphous silicon (a-Si) model" has been suggested to be an appropriate model to describe OFETs. The main specifics of this model are transport of carriers above a mobility edge obeying Boltzmann statistics and exponentially distributed tail states and deep trap states. Here, approximate trap distributions are determined by adjusting two-dimensional numerical simulations to the experimental data. It follows from a systematic variation of parameters describing the trap distributions that the existence of both donorlike and acceptorlike trap distributions near the valence band, respectively, and a fixed negative interface charge have to be assumed. For two typical devices with different organosilanes the electrical characteristics can be described well with a donorlike bulk trap distribution, an acceptorlike interface distribution, and/or a fixed negative interface charge. As expected, the density of the fixed or trapped interface charge depends strongly on the surface treatment of the dielectric. There are some limitations in determining the trap distributions caused by either slow time-dependent processes resulting in differences between transfer and output characteristics, or in the uncertainty of the effective mobility.

Isothermal relaxation current and microstructure changes of thermally aged polyester films impregnated by epoxy resin

NASA Astrophysics Data System (ADS)

Jiang, Xiongwei; Sun, Potao; Peng, Qingjun; Sima, Wenxia

2018-01-01

In this study, to understand the effect of thermal aging on polymer films degradation, specimens of polyester films impregnated by epoxy resin with different thermal aging temperatures (80 and 130 °C) and aging times (500, 1600, 2400 and 3000 h) are prepared, then charge de-trapping properties of specimens are investigated via the isothermal relaxation current (IRC) measurement, the distributions of trap level and its corresponding density are obtained based on the modified IRC model. It is found that the deep trap density increases remarkably at the beginning of thermal aging (before 1600 h), but it decreases obviously as the aging degree increases. At elevated aging temperature and, in particular considering the presence of air gap between two-layer insulation, the peak densities of deep traps decrease more significant in the late period of aging. It can be concluded that it is the released energy from de-trapping process leads to the fast degradation of insulation. Moreover, after thermal aging, the microstructure changes of crystallinity and molecular structures are analyzed via the x-ray diffraction experiment and Fourier transform infrared spectrometer. The results indicate that the variation of the deep trap density is closely linked with the changes of microstructure, a larger interface of crystalline/amorphous phase, more defects and broken chains caused by thermal aging form higher deep trap density stored in the samples.

Annealing shallow traps in electron beam irradiated high mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, Jin-Sung; Tyryshkin, Alexei; Lyon, Stephen

In metal-oxide-silicon (MOS) quantum devices, electron beam lithography (EBL) is known to create defects at the Si/SiO2 interface which can be catastrophic for single electron control. Shallow traps ( meV), which only manifest themselves at low temperature ( 4 K), are especially detrimental to quantum devices but little is known about annealing them. In this work, we use electron spin resonance (ESR) to measure the density of shallow traps in two sets of high mobility (μ) MOS transistors. One set (μ=14,000 cm2/Vs) was irradiated with an EBL dose (10 kV, 40 μC/cm2) and was subsequently annealed in forming gas while the other remained unexposed (μ=23,000 cm2/Vs). Our ESR data show that the forming gas anneal is sufficient to remove shallow traps generated by the EBL dose over the measured shallow trap energy range (0.3-4 meV). We additionally fit these devices' conductivity data to a percolation transition model and extract a zero temperature percolation threshold density, n0 ( 9 ×1010 cm-2 for both devices). We find that the extracted n0 agrees within 15 % with our lowest temperature (360 mK) ESR measurements, demonstrating agreement between two independent methods of evaluating the interface.

Relationship between effective mobility and border traps associated with charge trapping in In0.7Ga0.3As MOSFETs with various high-κ stacks

NASA Astrophysics Data System (ADS)

Kwon, Hyuk-Min; Kim, Dae-Hyun; Kim, Tae-Woo

2018-03-01

The effective mobility and reliability characteristics of In0.7Ga0.3As quantum-well (QW) MOSFETs with various high-κ gate stacks and HEMTs with a Schottky gate under bias temperature instability (BTI) stress were investigated. The effective mobilities (μeff) of HEMTs, single-layer Al2O3, bilayer Al2O3 (0.6 nm)/HfO2 (2.0 nm), and Al2O3 (0.6 nm)/HfO2 (3.0 nm) were ˜9000, ˜6158, ˜4789, and ˜4447 cm2 V-1 s-1 at N inv = 1.5 × 1012/cm2, respectively. The maximum effective mobility of In0.7Ga0.3As channel MOSFETs was compared with that of In0.7Ga0.3As/In0.48Al0.52As HEMTs, which are interface and border trap-free FETs. The results showed that the effective channel mobility was sensitive to traps in high-κ dielectrics related to interface trap density and border traps in the oxide. The ΔV T degradation of the bilayer Al2O3/HfO2 under BTI stress was greater than that of a single Al2O3 layer because the HfO2 layer had a high density of oxygen vacancies which were related to border traps.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

NASA Astrophysics Data System (ADS)

Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

2016-08-01

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

NASA Astrophysics Data System (ADS)

Zheng, Xue-Feng; Dong, Shuai-Shuai; Ji, Peng; Wang, Chong; He, Yun-Long; Lv, Ling; Ma, Xiao-Hua; Hao, Yue

2018-06-01

This paper provides a systematic study on the bulk traps and interface states in a typical AlGaN/GaN Schottky structure under proton irradiation. After 3 MeV proton irradiation with a dose of 5 × 1014 H+/cm2, a positive flat band voltage shift of 0.3 V is observed according to the capacitance-voltage (C-V) measurements. Based on this, the distribution of electrons across AlGaN and GaN layers is extracted. Associated with the numerical calculation, direct experimental evidences demonstrate that the bulk traps within the AlGaN layer dominate the carrier removal effect under proton irradiation. Furthermore, the effects of proton irradiation on AlGaN/GaN interface states were investigated by utilizing the frequency dependent conductance technique. The time constants are extracted, which increase from 1.10-2.53 μs to 3.46-37 μs after irradiation. Meanwhile, it shows that the density of interface states increases from 9.45 × 1011-1.70 × 1013 cm-2.eV-1 to 1.8 × 1012-1.8 × 1013 cm-2.eV-1 with an increase in trap activation energy from 0.34 eV-0.32 eV to 0.41 eV-0.35 eV after irradiation. The Coulomb scattering effect of electron trapping at interface states with deeper energy levels is utilized to explain the mobility degradation in this paper.

A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors

NASA Astrophysics Data System (ADS)

Djezzar, Boualem; Tahi, Hakim; Benabdelmoumene, Abdelmadjid; Chenouf, Amel; Kribes, Youcef

2012-11-01

In this paper, we present a new method, named on the fly oxide trap (OTFOT), to extract the bias temperature instability (BTI) in MOS transistors. The OTFOT method is based on charge pumping technique (CP) at low and high frequencies. We emphasize on the theoretical-based concept, giving a clear insight on the easy-use of the OTFOT methodology and demonstrating its viability to characterize the negative BTI (NBTI). Using alternatively high and low frequencies, OTFOT method separates the interface-traps (ΔNit) and border-trap (ΔNbt) (switching oxide-trap) densities independently and also their contributions to the threshold voltage shift (ΔVth), without needing additional methods. The experimental results, from two experimental scenarios, showing the extraction of NBTI-induced shifts caused by interface- and oxide-trap increases are also presented. In the first scenario, all stresses are performed on the same transistor. It exhibits an artifact value of exponent n. In the second scenario, each voltage stress is applied only on one transistor. Its results show an average n of 0.16, 0.05, and 0.11 for NBTI-induced ΔNit, ΔNbt, ΔVth, respectively. Therefore, OTFOT method can contribute to further understand the behavior of the NBTI degradation, especially through the threshold voltage shift components such as ΔVit and ΔVot caused by interface-trap and border-trap, respectively.

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

NASA Astrophysics Data System (ADS)

Xu, Huifang; Dai, Yuehua

2017-02-01

A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

Study of defects in an electroresistive Au/La2/3Sr1/3MnO3/SrTiO3(001) heterostructure by positron annihilation

NASA Astrophysics Data System (ADS)

Ferragut, R.; Dupaquier, A.; Brivio, S.; Bertacco, R.; Egger, W.

2011-09-01

Defects in an ultrathin Au/La2/3Sr1/3MnO3/SrTiO3 (Au/LSMO/STO) heterostructure displaying electroresistive behavior were studied using variable energy positron annihilation spectroscopy. Vacancy-like defects were found to be the dominant positron traps in the LSMO and STO thin perovskite oxides with a number density >1017 cm-3 and 2 × 1017 cm-3 in the STO substrate. High defect density was revealed by strong positron trapping at the Au/LSMO interface. Oxygen deficiency in LSMO would be the main source of these traps. Besides, a low density of sub-nano voids of ˜6 Å was found in the substrate and in the thin LSMO/STO films.

Interface architecture between TiO2/perovskite, perovskite/hole transport layer, and perovskite grain boundary(Conference Presentation)

NASA Astrophysics Data System (ADS)

Hayase, Shuzi; Hirotani, Daisuke; Moriya, Masahiro; Ogomi, Yuhei; Shen, Qing; Yoshino, Kenji; Toyoda, Taro

2016-09-01

In order to examine the interface structure of TiO2/perovskite layer, quartz crystal microbalance sensor (QCM) was used. On the QCM sensor, TiO2 layer was fabricated and the PbI2 solution in Dimethylformamide (DMF) was passed on the QCM sensor to estimate the adsorption density of the PbI2 on the titania2. The amount of PbI2 adsorption on TiO2 surface increased as the adsorption time and leveled off at a certain time. PbI2 still remained even after the solvent only (DMF) was passed on the TiO2 layer on QCM (namely rinsing with DMF), suggesting that the PbI2 was tightly bonded on the TiO2 surface. The bonding structure was found to be Ti-O-Pb linkage by XPS analysis. We concluded that the Ti-OH on the surface of TiO2 reacts with I-Pb-I to form Ti-O-Pb-I and HI (Fig.1 B). The surface trap density was measured by thermally stimulated current (TSC) method. Before the PbI2 passivation, the trap density of TiO2 was 1019 cm3. The trap density decreased to 1016/cm3 after the PbI2 passivation, suggesting that the TiO2 surface trap was passivated with I-Pb-I. The passivation density was tuned by the concentration of PbI2 in DMF, by which TiO2 layer was passivated. Perovskite solar cells were fabricated on the passivated TiO2 layer with various PbI2 passivation densities by one step process (mixture of PbI2 + MAI in DMF). It was found that Jsc increased with an increase in the Ti-O-Pb density. We concluded that the interface between TiO2 and perovskite layer has passivation structure consisting of Ti-O-Pb-I which decreases the trap density of the interfaces and supresses charge recombination. The effect of Cl anion on high efficiency is still controversial when perovskite layer is prepared by one step method from the mixture of MAI and PbCl2. It was found that adsorption density of PbCl2 on TiO2 surface was much higher than that of PbI2 from the experiment using QCM sensor. After the surface was washed with DMF, Cl and Pb were detected. These results suggest that the TiO2 surface was much more passivated by PbCl2 than by PbI2. This may explain partially the high efficiency when the perovskite layer was fabricated by one step process consisting of MAI and PbCl2 solution. We also observed that the crystal size increased with an increase in the amount of Cl anion which of course one of the explanation of the high efficiency. The interface of hole transport layer/perovskite layer, and between perovskite layer /perovskite layer (grain boundary) was passivated with organic amines. The passivation was also effective for increasing Voc and Jsc. This was explained by the results of transient absorption spectroscopy that the charge recombination time between hole transport payer/perovskite layer increased from 0.3 μsec to 60 μsec.

Research on c-HfO2 (0 0 1)/α -Al2O3 (1 -1 0 2) interface in CTM devices based on first principle theory

NASA Astrophysics Data System (ADS)

Lu, Wenjuan; Dai, Yuehua; Wang, Feifei; Yang, Fei; Ma, Chengzhi; Zhang, Xu; Jiang, Xianwei

2017-12-01

With the growing application of high-k dielectrics, the interface between HfO2 and Al2O3 play a crucial role in CTM devices. To clearly understand the interaction of the HfO-AlO interface at the atomic and electronic scale, the bonding feature, electronic properties and charge localized character of c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has been investigated by first principle calculations. The c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has adhesive energy about -1.754 J/m2, suggesting that this interface can exist stably. Through analysis of Bader charge and charge density difference, the intrinsic interfacial gap states are mainly originated from the OII and OIII types oxygen atoms at the interface, and only OIII type oxygen atoms can localized electrons effectively and are provided with good reliability during P/E cycles, which theoretically validate the experimental results that HfO2/Al2O3 multi-layered charge trapping layer can generate more effective traps in memory device. Furthermore, the influence of interfacial gap states during P/E cycles in the defective interface system have also been studied, and the results imply that defective system displays the degradation on the reliability during P/E cycles, while, the charge localized ability of interfacial states is stronger than intrinsic oxygen vacancy in the trapping layer. Besides, these charge localized characters are further explained by the analysis of the density of states correspondingly. In sum, our results compare well with similar experimental observations in other literatures, and the study of the interfacial gap states in this work would facilitate further development of interface passivation.

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

NASA Astrophysics Data System (ADS)

Rao, Ashwath; Verma, Ankita; Singh, B. R.

2015-06-01

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta2O5/Si metal oxide semiconductor (MOS) capacitors using capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100 rad to 1 Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta2O5/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta2O5 MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N2 ambient. The density of interface trap states (Dit) at Ta2O5/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta2O5/Si MOS devices.

Germanium MOS capacitors grown on Silicon using low temperature RF-PECVD

NASA Astrophysics Data System (ADS)

Dushaq, Ghada; Rasras, Mahmoud; Nayfeh, Ammar

2017-10-01

In this paper, Ge metal-oxide-semiconductor capacitors (MOSCAPs) are fabricated on Si using a low temperature two-step deposition technique by radio frequency plasma enhanced chemical vapor deposition. The MOSCAP gate stack consists of atomic layer deposition of Al2O3 as the gate oxide and a Ti/Al metal gate electrode. The electrical characteristics of 9 nm Al2O3/i-Ge/Si MOSCAPs exhibit an n-type (p-channel) behavior and normal high frequency C-V responses. In addition to CV measurements, the gate leakage versus the applied voltage is measured and discussed. Moreover, the electrical behavior is discussed in terms of the material and interface quality. The Ge/high-k interface trap density versus the surface potential is extracted using the most commonly used methods in detemining the interface traps based on the capacitance-voltage (C-V) curves. The discussion included the Dit calculation from the conductance method, the high-low frequency (Castagné-Vapaille) method, and the Terman (high-frequency) method. Furthermore, the origins of the discrepancies in the interface trap densities determined from the different methods are discussed. The study of the post annealed Ge layers at different temperatures in H2 and N2 gas ambient revealed an improved electrical and transport properties of the films treated at T  <  600 °C. Also, samples annealed at  <550 °C show the lowest threading dislocation density of ~1  ×  106 cm-2. The low temperature processing of Ge/Si demonstrates a great potential for p-channel transistor applications in a monolithically integrated CMOS platform.

Passivation of Ge/high-κ interface using RF Plasma nitridation

NASA Astrophysics Data System (ADS)

Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

2018-01-01

In this paper, plasma nitridation of a germanium surface using NH3 and N2 gases is performed with a standard RF-PECVD method at a substrate temperature of 250 °C. The structural and optical properties of the Ge surface have been investigated using Atomic Force Microscopy (AFM), Fourier Transform Infrared Spectroscopy (FT-IR), and Variable Angle Spectroscopic Ellipsometery (VASE). Study of the Ge (100) surface revealed that it is nitrated after plasma treatment while the GeO2 regrowth on the surface has been suppressed. Also, stability of the treated surface under air exposure is observed, where all the measurements were performed at room ambient. The electrical characteristics of fabricated Al/Ti/HfO2/GeON/p-Ge capacitors using the proposed surface treatment technique have been investigated. The C-V curves indicated a negligible hysteresis compared to ˜500 mV observed in untreated samples. Additionally, the C-V characteristic is used to extract the high-κ/Ge interface trap density using the most commonly used methods in determining the interface traps. The discussion includes the Dit calculation from the high-low frequency (Castagné-Vapaille) method and Terman (high-frequency) method. The high-low frequency method indicated a low interface trap density of ˜2.5 × 1011 eV-1.cm-2 compared to the Terman method. The J-V measurements revealed more than two orders of magnitude reduction of the gate leakage. This improved Ge interface quality is a promising low-temperature technique for fabricating high-performance Ge MOSFETs.

Isocurvature fluctuations through axion trapping by cosmic string wakes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Layek, Biswanath

2005-03-15

We consider wakelike density fluctuations produced by cosmic strings at the quark-hadron transition in the early universe. We show that low momentum axions which are produced through the radiation from the axionic string at an earlier stage, may get trapped inside these wakes due to delayed hadronization in these overdense regions. As the interfaces, bordering the wakes, collapse, the axions pick-up momentum from the walls and finally leave the wake regions. These axions thus can produce large scale isocurvature fluctuations. We have calculated the detailed profile of these axionic density fluctuations and discuss its astrophysical consequences.

Modeling and Simulation of Capacitance-Voltage Characteristics of a Nitride GaAs Schottky Diode

NASA Astrophysics Data System (ADS)

Ziane, Abderrezzaq; Amrani, Mohammed; Benamara, Zineb; Rabehi, Abdelaziz

2018-06-01

A nitride GaAs Schottky diode has been fabricated by the nitridation of GaAs substrates using a radio frequency discharge nitrogen plasma source with a layer thickness of approximately 0.7 nm of GaN. The capacitance-voltage (C-V) characteristics of the Au/GaN/GaAs structure were investigated at room temperature for different frequencies, ranging from 1 kHz to 1 MHz. The C-V measurements for the Au/GaN/GaAs Schottky diode were found to be strongly dependent on the bias voltage and the frequency. The capacitance curves depict an anomalous peak and a negative capacitance phenomenon, indicating the presence of continuous interface state density behavior. A numerical drift-diffusion model based on the Scharfetter-Gummel algorithm was elaborated to solve a system composed of the Poisson and continuities equations. In this model, we take into account the continuous interface state density, and we have considered exponential and Gaussian distributions of trap states in the band gap. The effects of the GaAs doping concentration and the trap state density are discussed. We deduce the shape and values of the trap states, then we validate the developed model by fitting the computed C-V curves with experimental measurements at low frequency.

Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

NASA Astrophysics Data System (ADS)

Colleoni, Davide; Pourtois, Geoffrey; Pasquarello, Alfredo

2017-03-01

In and Ga impurities substitutional to Al in the oxide layer resulting from diffusion out of the substrate are identified as candidates for electron traps under inversion at In0.53Ga0.47As/Al2O3 interfaces. Through density-functional calculations, these defects are found to be thermodynamically stable in amorphous Al2O3 and to be able to capture two electrons in a dangling bond upon breaking bonds with neighboring O atoms. Through a band alignment based on hybrid functional calculations, it is inferred that the corresponding defect levels lie at ˜1 eV above the conduction band minimum of In0.53Ga0.47As, in agreement with measured defect densities. These results support the technological importance of avoiding cation diffusion into the oxide layer.

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Zhi, Jiang; Yi-Qi, Zhuang; Cong, Li; Ping, Wang; Yu-Qi, Liu

2016-02-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (Dit) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

GaAs-oxide interface states - Gigantic photoionization via Auger-like process

NASA Technical Reports Server (NTRS)

Lagowski, J.; Kazior, T. E.; Gatos, H. C.; Walukiewicz, W.; Siejka, J.

1981-01-01

Spectral and transient responses of photostimulated current in MOS structures were employed for the study of GaAs-anodic oxide interface states. Discrete deep traps at 0.7 and 0.85 eV below the conduction band were found with concentrations of 5 x 10 to the 12th/sq cm and 7 x 10 to the 11th/sq cm, respectively. These traps coincide with interface states induced on clean GaAs surfaces by oxygen and/or metal adatoms (submonolayer coverage). In contrast to surfaces with low oxygen coverage, the GaAs-thick oxide interfaces exhibited a high density (about 10 to the 14th/sq cm) of shallow donors and acceptors. Photoexcitation of these donor-acceptor pairs led to a gigantic photoionization of deep interface states with rates 1000 times greater than direct transitions into the conduction band. The gigantic photoionization is explained on the basis of energy transfer from excited donor-acceptor pairs to deep states.

Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

NASA Astrophysics Data System (ADS)

Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

2018-02-01

We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

Density and mobility effects of the majority carriers in organic semiconductors under light excitation

NASA Astrophysics Data System (ADS)

Vagenas, N.; Giannopoulou, A.; Kounavis, P.

2015-01-01

This study demonstrates that the effect of light excitation on the density and the mobility of the majority carriers can be explored in organic semiconductors by modulated photocurrent spectroscopy. The spectra of phase and amplitude of the modulated photocurrent of pentacene films indicate a significant increase in the density of the photogenerated mobile holes (majority carriers). This increase is accompanied by a comparatively much smaller increase of the steady state photocurrent response which can be reconciled with a decrease in the mobility (μ) of holes. The decrease of μ is supported from an unusual increase of the Y/μ ratio of the out-of-phase modulated photocurrent (Y) signal to the mobility under light excitation. It is proposed that the mobile holes, which are generated from the dissociation of the light-created excitons more likely near the pentacene-substrate interface by electron trapping, populate grain boundaries charging them and producing a downward band bending. As a result, potential energy barriers are build up which limit the transport of holes interacting through trapping-detrapping with deep partially occupied traps in the charged grain boundaries. On the other hand, the transport of holes interacting through trapping-detrapping with empty traps is found unaffected.

Trapped Modes in a Three-Layer Fluid

NASA Astrophysics Data System (ADS)

Saha, Sunanda; Bora, Swaroop Nandan

2018-03-01

In this work, trapped mode frequencies are computed for a submerged horizontal circular cylinder with the hydrodynamic set-up involving an infinite depth three-layer incompressible fluid with layer-wise different densities. The impermeable cylinder is fully immersed in either the bottom layer or the upper layer. The effect of surface tension at the surface of separation is neglected. In this set-up, there exist three wave numbers: the lowest one on the free surface and the other two on the internal interfaces. For each wave number, there exist two modes for which trapped waves exist. The existence of these trapped modes is shown by numerical evidence. We investigate the variation of these trapped modes subject to change in the depth of the middle layer as well as the submergence depth. We show numerically that two-layer and single-layer results cannot be recovered in the double and single limiting cases of the density ratios tending to unity. The existence of trapped modes shows that in general, a radiation condition for the waves at infinity is insufficient for the uniqueness of the solution of the scattering problem.

Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

NASA Astrophysics Data System (ADS)

Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

2018-01-01

We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

A dynamic Monte Carlo study of anomalous current voltage behaviour in organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feron, K., E-mail: Krishna.Feron@csiro.au; Fell, C. J.; CSIRO Energy Flagship, Newcastle, NSW 2300

2014-12-07

We present a dynamic Monte Carlo (DMC) study of s-shaped current-voltage (I-V) behaviour in organic solar cells. This anomalous behaviour causes a substantial decrease in fill factor and thus power conversion efficiency. We show that this s-shaped behaviour is induced by charge traps that are located at the electrode interface rather than in the bulk of the active layer, and that the anomaly becomes more pronounced with increasing trap depth or density. Furthermore, the s-shape anomaly is correlated with interface recombination, but not bulk recombination, thus highlighting the importance of controlling the electrode interface. While thermal annealing is known tomore » remove the s-shape anomaly, the reason has been not clear, since these treatments induce multiple simultaneous changes to the organic solar cell structure. The DMC modelling indicates that it is the removal of aluminium clusters at the electrode, which act as charge traps, that removes the anomalous I-V behaviour. Finally, this work shows that the s-shape becomes less pronounced with increasing electron-hole recombination rate; suggesting that efficient organic photovoltaic material systems are more susceptible to these electrode interface effects.« less

Hysteresis mechanism and control in pentacene organic field-effect transistors with polymer dielectric

NASA Astrophysics Data System (ADS)

Huang, Wei; Shi, Wei; Han, Shijiao; Yu, Junsheng

2013-05-01

Hysteresis mechanism of pentacene organic field-effect transistors (OFETs) with polyvinyl alcohol (PVA) and/or polymethyl methacrylate (PMMA) dielectrics is studied. Through analyzing the electrical characteristics of OFETs with various PVA/PMMA arrangements, it shows that charge, which is trapped in PVA bulk and at the interface of pentacene/PVA, is one of the origins of hysteresis. The results also show that memory window is proportional to both trap amount in PVA and charge density at the gate/PVA or PVA/pentacene interfaces. Hence, the controllable memory window of around 0 ˜ 10 V can be realized by controlling the thickness and combination of triple-layer polymer dielectrics.

Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT)

NASA Astrophysics Data System (ADS)

Wang, Wei; Wang, Long; Xu, Guangwei; Gao, Nan; Wang, Lingfei; Ji, Zhuoyu; Lu, Congyan; Lu, Nianduan; Li, Ling; Liu, Miwng

2017-08-01

Mobility degradation at high gate bias is often observed in organic thin film transistors. We propose a mechanism for this confusing phenomenon, based on the percolation theory with the presence of disordered energy landscape with an exponential density of states. Within a simple model we show how the surface states at insulator/organic interface trap a portion of channel carriers, and result in decrease of mobility as well as source/drain current with gate voltage. Depending on the competition between the carrier accumulation and surface trapping effect, two different carrier density dependences of mobility are obtained, in excellent agreement with experiment data.

DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Koteswara Rao, K. S. R.

2018-02-01

In this work, we have fabricated low-temperature sol-gel spin-coated and oxygen (O2) plasma treated ZrO2 thin film-based metal-insulator-semiconductor devices. To understand the impact of plasma treatment on the Si/ZrO2 interface, deep level transient spectroscopy measurements were performed. It is reported that the interface state density ( D it) comes down to 7.1 × 1010 eV-1 cm-2 from 4 × 1011 eV-1 cm-2, after plasma treatment. The reduction in D it is around five times and can be attributed to the passivation of oxygen vacancies near the Si/ZrO2 interface, as they try to relocate near the interface. The energy level position ( E T) of interfacial traps is estimated to be 0.36 eV below the conduction band edge. The untreated ZrO2 film displayed poor leakage behavior due to the presence of several traps within the film and at the interface; O2 plasma treated films show improved leakage current density as they have been reduced from 5.4 × 10-8 A/cm2 to 1.98 × 10-9 A/cm2 for gate injection mode and 6.4 × 10-8 A/cm2 to 6.3 × 10-10 A/cm2 for substrate injection mode at 1 V. Hence, we suggest that plasma treatment might be useful in future device fabrication technology.

Phase-field-crystal study of solute trapping

NASA Astrophysics Data System (ADS)

Humadi, Harith; Hoyt, Jeffrey J.; Provatas, Nikolas

2013-02-01

In this study we have incorporated two time scales into the phase-field-crystal model of a binary alloy to explore different solute trapping properties as a function of crystal-melt interface velocity. With only diffusive dynamics, we demonstrate that the segregation coefficient, K as a function of velocity for a binary alloy is consistent with the model of Kaplan and Aziz where K approaches unity in the limit of infinite velocity. However, with the introduction of wavelike dynamics in both the density and concentration fields, the trapping follows the kinetics proposed by Sobolev [Phys. Lett. A10.1016/0375-9601(95)00084-G 199, 383 (1995)], where complete trapping occurs at a finite velocity.

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.

PubMed

Na, Junhong; Joo, Min-Kyu; Shin, Minju; Huh, Junghwan; Kim, Jae-Sung; Piao, Mingxing; Jin, Jun-Eon; Jang, Ho-Kyun; Choi, Hyung Jong; Shim, Joon Hyung; Kim, Gyu-Tae

2014-01-07

Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the interface nicely described the noise behavior in the strong accumulation regime both with and without the Al2O3 passivation layer. The interface trap density at the MoS2-SiO2 interface was extracted from the LFN analysis, and estimated to be Nit ~ 10(10) eV(-1) cm(-2) without and with the passivation layer. This suggested that the accumulation channel induced by the back-gate was not significantly influenced by the passivation layer. The Hooge mobility fluctuation (HMF) model implying the bulk conduction was found to describe the drain current fluctuations in the subthreshold regime, which is rarely observed in other nanodevices, attributed to those extremely thin channel sizes. In the case of the thick-MoS2 (~40 nm-thick) without the passivation, the HMF model was clearly observed all over the operation regime, ensuring the existence of the bulk conduction in multilayer MoS2. With the Al2O3 passivation layer, the change in the noise behavior was explained from the point of formation of the additional top channel in the MoS2 because of the fixed charges in the Al2O3. The interface trap density from the additional CNF model was Nit = 1.8 × 10(12) eV(-1) cm(-2) at the MoS2-Al2O3 interface.

A Biopolymer Heparin Sodium Interlayer Anchoring TiO2 and MAPbI3 Enhances Trap Passivation and Device Stability in Perovskite Solar Cells.

PubMed

You, Shuai; Wang, Hui; Bi, Shiqing; Zhou, Jiyu; Qin, Liang; Qiu, Xiaohui; Zhao, Zhiqiang; Xu, Yun; Zhang, Yuan; Shi, Xinghua; Zhou, Huiqiong; Tang, Zhiyong

2018-04-18

Traps in the photoactive layer or interface can critically influence photovoltaic device characteristics and stabilities. Here, traps passivation and retardation on device degradation for methylammonium lead trihalide (MAPbI 3 ) perovskite solar cells enabled by a biopolymer heparin sodium (HS) interfacial layer is investigated. The incorporated HS boosts the power conversion efficiency from 17.2 to 20.1% with suppressed hysteresis and Shockley-Read-Hall recombination, which originates primarily from the passivation of traps near the interface between the perovskites and the TiO 2 cathode. The incorporation of an HS interfacial layer also leads to a considerable retardation of device degradation, by which 85% of the initial performance is maintained after 70 d storage in ambient environment. Aided by density functional theory calculations, it is found that the passivation of MAPbI 3 and TiO 2 surfaces by HS occurs through the interactions of the functional groups (COO - , SO 3 - , or Na + ) in HS with undersaturated Pb and I ions in MAPbI 3 and Ti 4+ in TiO 2 . This work demonstrates a highly viable and facile interface strategy using biomaterials to afford high-performance and stable perovskite solar cells. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, L. N.; Choi, H. W.; Lai, P. T., E-mail: laip@eee.hku.hk

2015-11-23

GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorine-plasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer or the fluorine treatment. Experimental results show that the sample exhibits better characteristics: low interface-state density (8 × 10{sup 11 }cm{sup −2}/eV), small flatband voltage (0.69 V), good capacitance-voltage behavior, small frequency dispersion, and small gate leakage current (6.35 × 10{sup −6} A/cm{sup 2} at V{sub fb} + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface during gate-oxide annealing by the LaTaON interlayer and fluorine incorporation, and the passivating effects of fluorine atoms on the acceptor-likemore » interface and near-interface traps.« less

Modeling electronic trap state distributions in nanocrystalline anatase

NASA Astrophysics Data System (ADS)

Le, Nam; Schweigert, Igor

The charge transport properties of nanocrystalline TiO2 films, and thus the catalytic performance of devices that incorporate them, are affected strongly by the spatial and energetic distribution of localized electronic trap states. Such traps may arise from a variety of defects: Ti interstitials, O vacancies, step edges at surfaces, and grain boundaries. We have developed a procedure for applying density functional theory (DFT) and density functional tight binding (DFTB) calculations to characterize distributions of localized states arising from multiple types of defects. We have applied the procedure to investigate how the morphologies of interfaces between pairs of attached anatase nanoparticles determine the energies of trap states therein. Our results complement recent experimental findings that subtle changes in the morphology of highly porous TiO2 aerogel networks can have a dramatic effect on catalytic performance, which was attributed to changes in the distribution of trap states. This work was supported by the U.S. Naval Research Laboratory via the National Research Council and by the Office of Naval Research through the U.S. Naval Research Laboratory.

Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors

NASA Astrophysics Data System (ADS)

Sang, Liwen; Ren, Bing; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

2018-04-01

The capacitance-voltage (C-V) hysteresis in the bidirectional measurements of the p-GaN metal-insulator-semiconductor (MIS) capacitor is suppressed by using a CaF2 dielectric layer and a post annealing treatment. The density of trapped charge states at the CaF2/p-GaN interface is dramatically reduced from 1.3 × 1013 cm2 to 1.1 × 1011/cm2 compared to that of the Al2O3/p-GaN interface with a large C-V hysteresis. It is observed that the disordered oxidized interfacial layer can be avoided by using the CaF2 dielectric. The downward band bending of p-GaN is decreased from 1.51 to 0.85 eV as a result of the low-density oxides-related trap states. Our work indicates that the CaF2 can be used as a promising dielectric layer for the p-GaN MIS structures.

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

PubMed

Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

2016-02-10

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2018-02-01

Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

Interfacially Optimized, High Energy Density Nanoparticle-Polymer Composites for Capacitive Energy Storage

NASA Astrophysics Data System (ADS)

Shipman, Joshua; Riggs, Brian; Luo, Sijun; Adireddy, Shiva; Chrisey, Douglas

Energy storage is a green energy technology, however it must be cost effective and scalable to meet future energy demands. Polymer-nanoparticle composites are low cost and potentially offer high energy storage. This is based on the high breakdown strength of polymers and the high dielectric constant of ceramic nanoparticles, but the incoherent nature of the interface between the two components prevents the realization of their combined full potential. We have created inkjet printable nanoparticle-polymer composites that have mitigated many of these interface effects, guided by first principle modelling of the interface. We detail density functional theory modelling of the interface and how it has guided our use in in specific surface functionalizations and other inorganic layers. We have validated our approach by using finite element analysis of the interface. By choosing the correct surface functionalization we are able to create dipole traps which further increase the breakdown strength of our composites. Our nano-scale understanding has allowed us to create the highest energy density composites currently available (>40 J/cm3).

Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering

NASA Astrophysics Data System (ADS)

Ji, Hyunjin; Lee, Gwanmu; Joo, Min-Kyu; Yun, Yoojoo; Yi, Hojoon; Park, Ji-Hoon; Suh, Dongseok; Lim, Seong Chu

2017-05-01

The correlation between the channel thickness and the carrier mobility is investigated by conducting static and low frequency (LF) noise characterization for ambipolar carriers in multilayer MoTe2 transistors. For channel thicknesses in the range of 5-15 nm, both the low-field carrier mobility and the Coulomb-scattering-limited carrier mobility (μC) are maximal at a thickness of ˜10 nm. For LF noise, the interplay of interface trap density (NST), which was minimal at ˜10 nm, and the interfacial Coulomb scattering parameter (αSC), which decreased up to 10 nm and saturated above 10 nm, explained the mobility (μC) peaked near 10 nm by the carrier fluctuation and charge distribution.

Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

NASA Astrophysics Data System (ADS)

Katsuno, Takashi; Manaka, Takaaki; Soejima, Narumasa; Iwamoto, Mitsumasa

2017-02-01

Trapped charges underneath the field-plate (FP) in a p-gallium nitride (GaN) gate AlGaN/ GaN high electron mobility transistor device were visualized by using electric field-induced optical second-harmonic generation imaging. Second-harmonic (SH) signals in the off-state of the device with FP indicated that the electric field decreased at the p-GaN gate edge and concentrated at the FP edge. Nevertheless, SH signals originating from trapped charges were slightly observed at the p-GaN gate edge and were not observed at the FP edge in the on-state. Compared with the device without FP, reduction of trapped charges at the p-GaN gate edge of the device with FP is attributed to attenuation of the electric field with the aid of the FP. Negligible trapped charges at the FP edge is owing to lower trap density of the SiO2/AlGaN interface at the FP edge compared with that of the SiO2/p-GaN sidewall interface at the p-GaN gate edge and attenuated electric field by the thickness of the SiO2 passivation layer on the AlGaN surface.

Continuum elastic theory for dynamics of surfaces and interfaces

NASA Astrophysics Data System (ADS)

Pykhtin, Michael V.

This thesis is divided into three parts, different by problems they deal with, but similar by underlying assumptions (crystals are treated as classical elastic anisotropic media) and methods of solving (vibrational Green's functions). (i) In the first part we compute the density of vibrational modes for a vicinal Ni(977) surface. In the spectrum we find new step induced modes which are compared with recently reported experimental data for Ni(977) surface obtained by inelastic atom scattering. (ii) In the second part we study damping of low-frequency adsorbate vibrations via resonant coupling to the substrate phonons. Our theory provides a general expression for the vibrational damping rate which can be applied to widely varying coverages and arbitrary overlayer structures. The damping rates predicted by our theory for CO on Cu(100) are in excellent quantitative agreement with available experimental data. (iii) In the third part we develop a theory for the density of vibrational modes at the surface of a thin film of one anisotropic solid an on top of the other. We compute the density of modes for a GaN film on a sapphire substrate for a wide range of wavevector and frequency, and obtain dispersion maps which contain waves trapped between the surface of the film and the interface. Two families of the trapped modes were observed: Love waves and generalized Lamb waves. We also study the effect of threading edge dislocations (majority of defects in the GaN film) on the trapped modes. At the experimental dislocation density the effect is negligible.

MIS capacitor studies on silicon carbide single crystals

NASA Technical Reports Server (NTRS)

Kopanski, J. J.

1990-01-01

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

NASA Astrophysics Data System (ADS)

Hamzah, Afiq; Hamid, Fatimah A.; Ismail, Razali

2016-12-01

An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. The solution is based on the core SRGMOSFETs model of the Unified Charge Control Model (UCCM) for heavily doped conditions. The UCCM model of highly doped SRGMOSFETs is derived to obtain the exact equivalent expression as in the undoped case. Taking advantage of the undoped explicit charge-based expression, the asymptotic limits for below threshold and above threshold have been redefined to include the effect of trap states for heavily doped cases. After solving the asymptotic limits, an explicit mobile charge expression is obtained which includes the trap state effects. The explicit mobile charge model shows very good agreement with respect to numerical simulation over practical terminal voltages, doping concentration, geometry effects, and trap state effects due to the fixed oxide charges and interface traps. Then, the drain current is obtained using the Pao-Sah's dual integral, which is expressed as a function of inversion charge densities at the source/drain ends. The drain current agreed well with the implicit solution and numerical simulation for all regions of operation without employing any empirical parameters. A comparison with previous explicit models has been conducted to verify the competency of the proposed model with the doping concentration of 1× {10}19 {{cm}}-3, as the proposed model has better advantages in terms of its simplicity and accuracy at a higher doping concentration.

Trapped charge densities in Al{sub 2}O{sub 3}-based silicon surface passivation layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jordan, Paul M., E-mail: Paul.Jordan@namlab.com; Simon, Daniel K.; Dirnstorfer, Ingo

2016-06-07

In Al{sub 2}O{sub 3}-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al{sub 2}O{sub 3} layers are grown by atomic layer deposition with very thin (∼1 nm) SiO{sub 2} or HfO{sub 2} interlayers or interface layers. In SiO{sub 2}/Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured inmore » pure Al{sub 2}O{sub 3}. In Al{sub 2}O{sub 3}/SiO{sub 2}/Al{sub 2}O{sub 3} or Al{sub 2}O{sub 3}/HfO{sub 2}/Al{sub 2}O{sub 3} stacks, very high total charge densities of up to 9 × 10{sup 12} cm{sup −2} are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al{sub 2}O{sub 3} layer thickness between silicon and the HfO{sub 2} or the SiO{sub 2} interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al{sub 2}O{sub 3} layers opens the possibility to engineer the field-effect passivation in the solar cells.« less

Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites.

PubMed

Ji, Hyunjin; Joo, Min-Kyu; Yi, Hojoon; Choi, Homin; Gul, Hamza Zad; Ghimire, Mohan Kumar; Lim, Seong Chu

2017-08-30

There is a general consensus that the carrier mobility in a field-effect transistor (FET) made of semiconducting transition-metal dichalcogenides (s-TMDs) is severely degraded by the trapping/detrapping and Coulomb scattering of carriers by ionic charges in the gate oxides. Using a double-gated (DG) MoTe 2 FET, we modulated and enhanced the carrier mobility by adjusting the top- and bottom-gate biases. The relevant mechanism for mobility tuning in this device was explored using static DC and low-frequency (LF) noise characterizations. In the investigations, LF-noise analysis revealed that for a strong back-gate bias the Coulomb scattering of carriers by ionized traps in the gate dielectrics is strongly screened by accumulation charges. This significantly reduces the electrostatic scattering of channel carriers by the interface trap sites, resulting in increased mobility. The reduction of the number of effective trap sites also depends on the gate bias, implying that owing to the gate bias, the carriers are shifted inside the channel. Thus, the number of active trap sites decreases as the carriers are repelled from the interface by the gate bias. The gate-controlled Coulomb-scattering parameter and the trap-site density provide new handles for improving the carrier mobility in TMDs, in a fundamentally different way from dielectric screening observed in previous studies.

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Joung-min, E-mail: cho.j.ad@m.titech.ac.jp; Akiyama, Yuto; Kakinuma, Tomoyuki

2013-10-15

We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulatedmore » characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V{sub G} above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge.« less

Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals.

PubMed

Park, Seonyoung; Kim, Seong Yeoul; Choi, Yura; Kim, Myungjun; Shin, Hyunjung; Kim, Jiyoung; Choi, Woong

2016-05-11

We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼10(17) cm(-3) and a minimum interface trap density of ∼10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming a high-quality Al2O3-MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.

The diffusivity and solubility of deuterium in a high chromium martensitic steel

NASA Astrophysics Data System (ADS)

Forcey, K. S.; Iordanova, I.; Yaneva, M.

1997-01-01

The permeability, diffusivity and solubility of deuterium in the martensitic stainless steel MANET II have been studied in the temperature range 194-465°C by applying a time dependent gas-phase permeation technique. It was found that the temperature dependence of diffusivity and solubility could not be described by a simple Arrhenius expression over the entire temperature range investigated. At lower temperatures (below about 330°C) the diffusivity was found to be greatly reduced by the effects of trapping. Oriani's model has been applied to obtain the trapping energy and number density of the traps as well as the relative amounts of deuterium dissolved at lattice and trap sites. It is suggested that the most likely sites for trapping are at interfaces between the martensitic laths and between second phase particles and the surrounding metal matrix.

Observation of interface defects in thermally oxidized SiC using positron annihilation

NASA Astrophysics Data System (ADS)

Dekker, James; Saarinen, Kimmo; Ólafsson, Halldór; Sveinbjörnsson, Einar Ö.

2003-03-01

Positron annihilation has been applied to study thermally oxidized 4H- and 6H-SiC. The SiC/SiO2 interface is found to contain a high density of open-volume defects. The positron trapping at the interface defects correlates with the charge of the interface determined by capacitance-voltage experiments. For oxides grown on n-SiC substrates, the positron annihilation characteristics at these defects are nearly indistinguishable from those of a silicon/oxide interface, with no discernable contribution from C-related bonds or carbon clusters. These results indicate that those defects at the SiC/oxide interface, which are visible to positrons, are similar to those at the Si/oxide interface. The positron annihilation characteristics suggest that these defects are vacancies surrounded by oxygen atoms.

Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

PubMed Central

Nguyen, Ky V.; Payne, Marcia M.; Anthony, John E.; Lee, Jung Hun; Song, Eunjoo; Kang, Boseok; Cho, Kilwon; Lee, Wi Hyoung

2016-01-01

Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the intrinsic effects of GBs within 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) thin films on the electrical properties of OFETs. The GB density was easily changed by controlling nulceation event in TES-ADT thin films. When the mixing time was increased, the number of aggregates in as-spun TES-ADT thin films were increased and subsequent exposure of the films to 1,2-dichloroethane vapor led to a significant increase in the number of nuleation sites, thereby increasing the GB density of TES-ADT spherulites. The density of GBs strongly influences the angular spread and crystallographic orientation of TES-ADT spherulites. Accordingly, the FETs with higher GB densities showed much poorer electrical characteristics than devices with lower GB density. Especially, GBs provide charge trapping sites which are responsible for bias-stress driven electrical instability. Dielectric surface treatment with a polystyrene brush layer clarified the GB-induced charge trapping by reducing charge trapping at the semiconductor-dielectric interface. Our study provides an understanding on GB induced bias instability for the development of high performance OFETs. PMID:27615358

Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors.

PubMed

Nguyen, Ky V; Payne, Marcia M; Anthony, John E; Lee, Jung Hun; Song, Eunjoo; Kang, Boseok; Cho, Kilwon; Lee, Wi Hyoung

2016-09-12

Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the intrinsic effects of GBs within 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) thin films on the electrical properties of OFETs. The GB density was easily changed by controlling nulceation event in TES-ADT thin films. When the mixing time was increased, the number of aggregates in as-spun TES-ADT thin films were increased and subsequent exposure of the films to 1,2-dichloroethane vapor led to a significant increase in the number of nuleation sites, thereby increasing the GB density of TES-ADT spherulites. The density of GBs strongly influences the angular spread and crystallographic orientation of TES-ADT spherulites. Accordingly, the FETs with higher GB densities showed much poorer electrical characteristics than devices with lower GB density. Especially, GBs provide charge trapping sites which are responsible for bias-stress driven electrical instability. Dielectric surface treatment with a polystyrene brush layer clarified the GB-induced charge trapping by reducing charge trapping at the semiconductor-dielectric interface. Our study provides an understanding on GB induced bias instability for the development of high performance OFETs.

Local Time-Dependent Charging in a Perovskite Solar Cell.

PubMed

Bergmann, Victor W; Guo, Yunlong; Tanaka, Hideyuki; Hermes, Ilka M; Li, Dan; Klasen, Alexander; Bretschneider, Simon A; Nakamura, Eiichi; Berger, Rüdiger; Weber, Stefan A L

2016-08-03

Efficient charge extraction within solar cells explicitly depends on the optimization of the internal interfaces. Potential barriers, unbalanced charge extraction, and interfacial trap states can prevent cells from reaching high power conversion efficiencies. In the case of perovskite solar cells, slow processes happening on time scales of seconds cause hysteresis in the current-voltage characteristics. In this work, we localized and investigated these slow processes using frequency-modulation Kelvin probe force microscopy (FM-KPFM) on cross sections of planar methylammonium lead iodide (MAPI) perovskite solar cells. FM-KPFM can map the charge density distribution and its dynamics at internal interfaces. Upon illumination, space charge layers formed at the interfaces of the selective contacts with the MAPI layer within several seconds. We observed distinct differences in the charging dynamics at the interfaces of MAPI with adjacent layers. Our results indicate that more than one process is involved in hysteresis. This finding is in agreement with recent simulation studies claiming that a combination of ion migration and interfacial trap states causes the hysteresis in perovskite solar cells. Such differences in the charging rates at different interfaces cannot be separated by conventional device measurements.

Role of interface states on electron transport in a-Si:H/nc-Si:H multilayer structures

NASA Astrophysics Data System (ADS)

Yadav, Asha; Kumari, Juhi; Agarwal, Pratima

2018-05-01

In this paper we report, I-V characteristic of a-Si:H/nc-Si:H multilayer structures in lateral as well as transverse direction. In lateral geometry, where the interfaces are parallel to the direction of electronic transport, residual photo conductivity (persistent photoconductivity) is observed after the light was turned off. On the other hand, in transverse geometry, where interfaces are along the direction of electronic transport, the space charge limited currents are affected and higher density of states is obtained. The PPC was more in the structures where numbers of such interface were more. These results have been understood in terms of the charge carriers trapped at the interface, which influence the electronic transport.

Counting ions and other nucleophiles at surfaces by chemical trapping.

PubMed

Cuccovia, Iolanda Midea; da Silva Lima, Filipe; Chaimovich, Hernan

2017-10-01

The interfaces of membranes and other aggregates are determined by the polarity, electrical charge, molecular volume, degrees of motional freedom and packing density of the head groups of the amphiphiles. These properties also determine the type of bound ion (ion selectivity) and its local density, i.e. concentration defined by choosing an appropriate volume element at the aggregate interface. Bulk and local ion concentrations can differ by orders of magnitude. The relationships between ion (or other compound) concentrations in the bulk solvent and in the interface are complex but, in some cases, well established. As the local ion concentration, rather than that in the bulk, controls a variety of properties of membranes, micelles, vesicles and other objects of theoretical and applied interests, measurement of local (interfacial, bound) ion concentrations is of relevance for understanding and characterizing such aggregates. Many experimental methods for estimating ion distributions between the bulk solution and the interface provide indirect estimates because they are based on concentration-dependent properties, rather than concentration measurements. Dediazoniation, i.e. the loss of N 2 , of a substituted diazophenyl derivative provides a tool for determining the number of nucleophiles (including neutral or negatively charged ions) surrounding the diazophenyl derivative prior to the dediazoniation event. This reaction, defined as chemical trapping, and the appropriate reference points obtained in bulk solution allow direct measurements of local concentrations of a variety of nucleophiles at the surface of membranes and other aggregates. Here we review our contributions of our research group to the use, and understanding, of this method and applications of chemical trapping to the description of local concentrations of ions and other nucleophiles in micelles, reverse micelles, vesicles and solvent mixtures. Among other results, we have shown that interfacial water determines micellar shape, zwitterionic vesicle-forming amphiphiles display ion selectivity and urea does not accumulate at micellar interfaces. We have also shown that reaction products can be predicted from the composition of the initial state, even in non-ideal solvent mixtures, supporting the usefulness of chemical trapping as a method to determine local concentrations. In addition, we have analysed the mechanism of dediazoniation, both on theoretical and experimental basis, and concluded that the formation of a free phenyl cation is not a necessary part of the reaction pathway.

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

PubMed Central

Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

2017-01-01

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm−2 eV−1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement. PMID:28084434

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

PubMed

Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

2017-01-13

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

Surface damage characterization of FBK devices for High Luminosity LHC (HL-LHC) operations

NASA Astrophysics Data System (ADS)

Moscatelli, F.; Passeri, D.; Morozzi, A.; Dalla Betta, G.-F.; Mattiazzo, S.; Bomben, M.; Bilei, G. M.

2017-12-01

The very high fluences (e.g. up to 2×1016 1 MeV neq/cm2) and total ionising doses (TID) of the order of 1 Grad, expected at the High Luminosity LHC (HL-LHC), impose new challenges for the design of effective, radiation resistant detectors. Ionising energy loss is the dominant effect for what concerns SiO2 and SiO2/Si interface radiation damage. In particular, surface damage can create a positive charge layer near the SiO2/Si interface and interface traps along the SiO2/Si interface, which strongly influence the breakdown voltage, the inter-electrode isolation and capacitance, and might also impact the charge collection properties of silicon sensors. To better understand in a comprehensive framework the complex and articulated phenomena related to surface damage at these very high doses, measurements on test structures have been carried out in this work (e.g. C-V and I-V). In particular, we have studied the properties of the SiO2 layer and of the SiO2/Si interface, using MOS capacitors, gated diodes (GD) and MOSFETs manufactured by FBK on high-resistivity n-type and p-type silicon, before and after irradiation with X-rays in the range from 50 krad(SiO2) to 20 Mrad(SiO2). Relevant parameters have been determined for all the tested devices, converging in the oxide charge density NOX, the surface generation velocity s0 and the integrated interface-trap density NIT dose-dependent values. These parameters have been extracted to both characterize the technology as a function of the dose and to be used in TCAD simulations for the surface damage effect modeling and the analysis and optimization of different classes of detectors for the next HEP experiments.

Wet oxidation of GeSi strained layers by rapid thermal processing

NASA Astrophysics Data System (ADS)

Nayak, D. K.; Kamjoo, K.; Park, J. S.; Woo, J. C. S.; Wang, K. L.

1990-07-01

A cold-wall rapid thermal processor is used for the wet oxidation of the commensurately grown GexSi1-x layers on Si substrates. The rate of oxidation of the GexSi1-x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the increase in the Ge content in GexSi1-x layer. The oxidation rate of GexSi1-x appears to decrease with increasing oxidation time for the time-temperature cycles considered here. Employing high-frequency and quasi-static capacitance-voltage measurements, it is found that a fixed negative oxide charge density in the range of 1011- 1012/cm2 and the interface trap level density (in the mid-gap region) of about 1012/cm2 eV are present. Further, the density of this fixed interface charge at the SiO2/GeSi interface is found to increase with the Ge concentration in the commensurately grown GeSi layers.

Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing

NASA Astrophysics Data System (ADS)

Park, Hokyung; Choi, Rino; Lee, Byoung Hun; Hwang, Hyunsang

2007-09-01

High pressure deuterium annealing on the hot carrier reliability characteristics of HfSiO metal oxide semiconductor field effect transistor (MOSFET) was investigated. Comparing with the conventional forming gas (H2/Ar=10%/96%, 480 °C, 30 min) annealed sample, MOSFET annealed in 5 atm pure deuterium ambient at 400 °C showed the improvement of linear drain current, reduction of interface trap density, and improvement of the hot carrier reliability characteristics. These improvements can be attributed to the effective passivation of the interface trap site after high pressure annealing and heavy mass effect of deuterium. These results indicate that high pressure pure deuterium annealing can be a promising process for improving device performance as well as hot carrier reliability, together.

Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP

NASA Astrophysics Data System (ADS)

Ferrandis, Philippe; Billaud, Mathilde; Duvernay, Julien; Martin, Mickael; Arnoult, Alexandre; Grampeix, Helen; Cassé, Mikael; Boutry, Hervé; Baron, Thierry; Vinet, Maud; Reimbold, Gilles

2018-04-01

To overcome the Fermi-level pinning in III-V metal-oxide-semiconductor capacitors, attention is usually focused on the choice of dielectric and surface chemical treatments prior to oxide deposition. In this work, we examined the influence of the III-V material surface cleaning and the semiconductor growth technique on the electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP(100) substrates. By means of the capacitance-voltage measurements, we demonstrated that samples do not have the same total oxide charge density depending on the cleaning solution used [(NH4)2S or NH4OH] prior to oxide deposition. The determination of the interface trap density revealed that a Fermi-level pinning occurs for samples grown by metalorganic chemical vapor deposition but not for similar samples grown by molecular beam epitaxy. Deep level transient spectroscopy analysis explained the Fermi-level pinning by an additional signal for samples grown by metalorganic chemical vapor deposition, attributed to the tunneling effect of carriers trapped in oxide toward interface states. This work emphasizes that the choice of appropriate oxide and cleaning treatment is not enough to prevent a Fermi-level pinning in III-V metal-oxide-semiconductor capacitors. The semiconductor growth technique needs to be taken into account because it impacts the trapping properties of the oxide.

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Ho-Myoung; Kim, Hee-Dong; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

Graphical abstract: The degradation tendency extracted by CP technique was almost the same in both the bulk-type and TFT-type cells. - Highlights: • D{sub it} is directly investigated from bulk-type and TFT-type CTF memory. • Charge pumping technique was employed to analyze the D{sub it} information. • To apply the CP technique to monitor the reliability of the 3D NAND flash. - Abstract: The energy distribution and density of interface traps (D{sub it}) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP)more » technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 10{sup 12} cm{sup −2} eV{sup −1} to 3.66 × 10{sup 13} cm{sup −2} eV{sup −1} due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for D{sub it} of the TFT-type cells was similar to those of bulk-type cells.« less

Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakraborty, Apurba, E-mail: apurba.chakraborty86@gmail.com; Biswas, Dhrubes; Advanced Technology Development Centre, IIT Kharagpur, Kharagpur 721302

2015-02-23

Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN ismore » to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10{sup 12 }eV{sup −1} cm{sup −2} in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10{sup 10} eV{sup −1} cm{sup −2} and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V.« less

Effect of interface-dependent crystalline boundary on sub-threshold characteristics in a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistor

NASA Astrophysics Data System (ADS)

Kwon, Jin-Hyuk; Kang, In Man; Bae, Jin-Hyuk

2014-03-01

We demonstrate how the sub-threshold characteristics are affected by the density of crystalline domain boundaries directly governed by an organic semiconductor (OSC) - a gate insulator interface in a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) thin-film transistor (TFT). For generation of an engineered interface, a self assembled monolayer of octadecyltricholorosilane (OTS) was produced between a solution processed TIPS-pentacene film and a silicon dioxide layer. The interfacial charge trap density (Ntrap) deduced from the sub-threshold characteristics was significantly minimized after OTS treatment due to reduced crystal domain boundaries in the TIPS-pentacene film. In addition, the carrier mobility exhibits a value twice as large by OTS treatment. It is found that less crystal domain boundaries in the solution-processed OSC obtained from the engineered interface play an important role in inducing improved sub-threshold characteristics together with increased carrier mobility in organic TFTs.

Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

NASA Astrophysics Data System (ADS)

Lükens, G.; Yacoub, H.; Kalisch, H.; Vescan, A.

2016-05-01

The interface charge density between the gate dielectric and an AlGaN/GaN heterostructure has a significant impact on the absolute value and stability of the threshold voltage Vth of metal-insulator-semiconductor (MIS) heterostructure field effect transistor. It is shown that a dry-etching step (as typically necessary for normally off devices engineered by gate-recessing) before the Al2O3 gate dielectric deposition introduces a high positive interface charge density. Its origin is most likely donor-type trap states shifting Vth to large negative values, which is detrimental for normally off devices. We investigate the influence of oxygen plasma annealing techniques of the dry-etched AlGaN/GaN surface by capacitance-voltage measurements and demonstrate that the positive interface charge density can be effectively compensated. Furthermore, only a low Vth hysteresis is observable making this approach suitable for threshold voltage engineering. Analysis of the electrostatics in the investigated MIS structures reveals that the maximum Vth shift to positive voltages achievable is fundamentally limited by the onset of accumulation of holes at the dielectric/barrier interface. In the case of the Al2O3/Al0.26Ga0.74N/GaN material system, this maximum threshold voltage shift is limited to 2.3 V.

Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

NASA Astrophysics Data System (ADS)

Ke, Wen-Cheng; Lee, Fang-Wei; Yang, Cheng-Yi; Chen, Wei-Kuo; Huang, Hao-Ping

2015-10-01

This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10-4 Ω cm2 was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 108 cm-2. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (Vo) in the InON nanodots played a crucial role in carrier transport. The fitting I-V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

What's on the Surface? Physics and Chemistry of Delta-Doped Surfaces

NASA Technical Reports Server (NTRS)

Hoenk, Michael

2011-01-01

Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)

Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Otani, Yohei; Ono, Toshiro

2011-09-01

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeNx/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeNx/Ge interface properties. The GeNx/Ge formed at room temperature and treated by PMA at 400 °C exhibits the best interface properties with an interface trap density of 1 × 1011 cm-2 eV-1. The GeNx/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marrakchi, G.; Barbier, D.; Guillot, G.

Electrical and deep level transient spectroscopy measurements on Schottky barriers were performed in order to characterize electrically active defects in n-type GaAs (Bridgman substrates or liquid-phase epitaxial layers) after pulsed electron beam annealing. Both surface damage and bulk defects were observed in the Bridgman substrates depending on the pulse energy density. No electron traps were detected in the liquid-phase epitaxial layers before and after annealing for an energy density of 0.4 J/cm/sup 2/. The existence of an interfacial insulating layer at the metal-semiconductor interface, associated with As out-diffusion during the pulsed electron irradiation, was revealed by the abnormally high valuesmore » of the Schottky barrier diffusion potential. Moreover, two new electron traps with activation energy of 0.35 and 0.43 eV, called EP1 and EP2, were introduced in the Bridgman substrates after pulsed electron beam annealing. The presence of these traps, related to the As evaporation, was tentatively attributed to the decrease of the EL2 electron trap signal after 0.4-J/cm/sup 2/ annealing. It is proposed that these new defects states are due to the decomposition of the As/sub Ga/-As/sub i/ complex recently considered as the most probable defect configuration for the dominant EL2 electron trap usually detected in as-grown GaAs substrates.« less

Traps and Interface Fixed Charge Effects on a Solution-Processed n-Type Polymeric-Based Organic Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Hafsi, B.; Boubaker, A.; Guerin, D.; Lenfant, S.; Kalboussi, A.; Lmimouni, K.

2017-02-01

Organic field-effect transistors based on poly{[ N, N0- bis(2-octyldodecyl)- naphthalene-1,4,5,8- bis(dicarboximide)-2,6-diyl]-alt-5,50-(2,20-bithiophene)}, [P(NDI2OD-T2)n], were fabricated and characterized. The effect of octadecyltrichlorosilane (OTS) a self-assembled monolayer (SAM) grafted on to a SiO2 gate dielectric was investigated. A significant improvement of the charge mobility ( μ), up to 0.22 cm2/V s, was reached thanks to the OTS treatment. Modifying some technological parameters relating to fabrication, such as solvents, was also studied. We have analyzed the electrical properties of these thin-film transistors by using a two-dimensional drift-diffusion simulator, Integrated System Engineering-Technology Computer Aided Design (ISE-TCAD®). We studied the fixed surface charges at the organic semiconductor/oxide interface and the bulk traps effect. The dependence of the threshold voltage on the density and energy level of the trap states has also been considered. We finally found a good agreement between the output and transfer characteristics for experimental and simulated data.

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

NASA Astrophysics Data System (ADS)

Yokoyama, Masafumi; Asakura, Yuji; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi

2014-06-01

We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al2O3/GaSb MOS interface properties. The Al2O3/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (Dit) of ˜4.5 × 1013 cm-2 eV-1. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al2O3/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.

2015-07-20

Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystallinemore » II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II-VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique

NASA Astrophysics Data System (ADS)

Ling, C. C.; Shek, Y. F.; Huang, A. P.; Fung, S.; Beling, C. D.

1999-02-01

Positron-lifetime spectroscopy has been used to investigate the electric-field distribution occurring at the Au-semi-insulating GaAs interface. Positrons implanted from a 22Na source and drifted back to the interface are detected through their characteristic lifetime at interface traps. The relative intensity of this fraction of interface-trapped positrons reveals that the field strength in the depletion region saturates at applied biases above 50 V, an observation that cannot be reconciled with a simple depletion approximation model. The data, are, however, shown to be fully consistent with recent direct electric-field measurements and the theoretical model proposed by McGregor et al. [J. Appl. Phys. 75, 7910 (1994)] of an enhanced EL2+ electron-capture cross section above a critical electric field that causes a dramatic reduction of the depletion region's net charge density. Two theoretically derived electric field profiles, together with an experimentally based profile, are used to estimate a positron mobility of ~95+/-35 cm2 V-1 s-1 under the saturation field. This value is higher than previous experiments would suggest, and reasons for this effect are discussed.

Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures

NASA Astrophysics Data System (ADS)

Idris, M. I.; Weng, M. H.; Chan, H.-K.; Murphy, A. E.; Clark, D. T.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2016-12-01

In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance-voltage measurements taken for a range of frequencies have been utilized to extract parameters including flatband voltage, threshold voltage, effective oxide charge, and interface state density. The variation of these parameters with temperature has been investigated for bias sweeps in opposing directions and a comparison made between phosphorous doped and as-grown oxides. At room temperature, the effective oxide charge for SiO2 may be reduced by the phosphorous termination of dangling bonds at the interface. However, at high temperatures, the effective charge in the phosphorous doped oxide remains unstable and effects such as flatband voltage shift and threshold voltage shift dominate the characteristics. The instability in these characteristics was found to result from the trapped charges in the oxide (±1012 cm-3) or near interface traps at the interface of the gate oxide and the semiconductor (1012-1013 cm-2 eV-1). Hence, the performance enhancements observed for phosphorous doped oxides are not realised in devices operated at elevated temperatures.

Evaluation of Electrical Characteristics and Trap-State Density in Bottom-Gate Polycrystalline Thin Film Transistors Processed with High-Pressure Water Vapor Annealing

NASA Astrophysics Data System (ADS)

Kunii, Masafumi

2006-02-01

This paper discusses electrical characteristics and trap-state density in polycrystalline silicon (poly-Si) used in bottom-gate poly-Si thin film transistors (TFTs) processed with high-pressure water vapor annealing (HWA). The threshold voltage uniformity of the HWA-processed TFTs is improved by 42% for N-channel and 38% for P-channel TFTs in terms of standard deviation, and carrier mobility is enhanced by 10% or greater for both N- and P-channel TFTs than those TFTs processed conventionally. Subthreshold swing is also improved by HWA, showing that HWA postannealing is effective for improving the Si/SiO2 interface of the bottom-gate TFTs. Two types of TFTs having different poly-Si crystallinities are examined to investigate carrier transport in poly-Si processed by HWA postannealing. The evaluation of trap-state density for the two types of poly-Si reveals that HWA postannealing is more efficient for N-channel than for P-channel TFTs. Furthermore, HWA postannealing is more effective for poly-Si with high crystallinity to improve TFT characteristics. The analysis of the trap-state distributions and the activation energy of TFT drain current indicate that HWA deactivates dangling bonds highly localized at poly-Si grain boundaries (GBs). Thus, HWA postannealing effects can be interpreted by a GB barrier potential model similar to that applied to conventional hydrogenation.

Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1})

NASA Astrophysics Data System (ADS)

Shiomi, Hiromu; Kitai, Hidenori; Tsujimura, Masatoshi; Kiuchi, Yuji; Nakata, Daisuke; Ono, Shuichi; Kojima, Kazutoshi; Fukuda, Kenji; Sakamoto, Kunihiro; Yamasaki, Kimiyohi; Okumura, Hajime

2016-04-01

The effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}) were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance-voltage (C-V) measurements revealed that the difference in field-effect mobility between wet oxide and dry oxynitride interfaces was mainly attributed to the ratio of the mobile electron density to the total induced electron density. The surface states close to the conduction band edge causing a significant trapping of inversion carriers were also evaluated. High-resolution Rutherford backscattering spectroscopy (HR-RBS) analysis and high-resolution elastic recoil detection analysis (HR-ERDA) were employed to show the nanometer-scale compositional profile of the SiC-MOS interfaces for the first time. These analyses, together with cathode luminescence (CL) spectroscopy and transmission electron microscopy (TEM), suggested that the deviations of stoichiometry and roughness at the interface defined the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Guo Xing; Hatchtel, Jordan; Shen, Xiao

Here, we investigate negative-bias temperature instabilities in SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics. The activation energies we measured for interface-trap charge buildup during negative-bias temperature stress were lower for SiGe channel pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si capping layers than for conventional Si channel pMOSFETs with SiO 2 gate dielectrics. Electron energy loss spectroscopy and scanning transmission electron microscopy images demonstrate that Ge atoms can diffuse from the SiGe layer into the Si capping layer, which is adjacent to the SiO 2/HfO 2 gate dielectric. Density functional calculations show that these Ge atoms reduce themore » strength of nearby Si-H bonds and that Ge-H bond energies are still lower, thereby reducing the activation energy for interface-trap generation for the SiGe devices. Moreover, activation energies for oxide-trap charge buildup during negative-bias temperature stress are similarly small for SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si pMOSFETs with SiO 2 gate dielectrics, suggesting that, in both cases, the oxide-trap charge buildup likely is rate-limited by hole tunneling into the near-interfacial SiO 2.« less

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

NASA Astrophysics Data System (ADS)

Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

2018-05-01

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

Nonstoichiometric Solution-Processed BaTiO₃ Film for Gate Insulator Applications.

PubMed

Lau, Joyce; Kim, Sangsub; Kim, Hyunki; Koo, Kwangjun; Lee, Jaeseob; Kim, Sangsoo; Choi, Byoungdeog

2018-09-01

Solution processed barium titanate (BTO) was used to fabricate an Al/BaTiO3/p-Si metal-insulator-semiconductor (MIS) structure, which was used as a gate insulator. Changes in the electrical characteristics of the film were investigated as a function of the film thickness and post deposition annealing conditions. Our results showed that a thickness of 5 layers and an annealing temperature of 650 °C produced the highest electrical performance. BaxTi1-xO3 was altered at x = 0.10, 0.30, 0.50, 0.70, 0.90, and 1.0 to investigate changes in the electrical properties as a function of composition. The highest dielectric constant of 87 was obtained for x = 0.10, while the leakage current density was suppressed as Ba content increased. The lowest leakage current density was 1.34×10-10 A/cm2, which was observed at x = 0.90. The leakage current was related to the resistivity of the film, the interface states, and grain densification. Space charge limited current (SCLC) was the dominant leakage mechanism in BTO films based on leakage current analysis. Although a Ba content of x = 0.90 had the highest trap density, the traps were mainly composed of Ti-vacancies, which acted as strong electron traps and affected the film resistivity. A secondary phase, Ba2TiO4, which was observed in cases of excess Ba, acted as a grain refiner and provided faster densification of the film during the thermal process. The absence of a secondary phase in BaO (x = 1.0) led to the formation of many interface states and degradation in the electrical properties. Overall, the insulator properties of BTO were improved when the composition ratio was x = 0.90.

A novel technique to measure interface trap density in a GaAs MOS capacitor using time-varying magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhury, Aditya N. Roy, E-mail: aditya@physics.iisc.ernet.in; Venkataraman, V.

Interface trap density (D{sub it}) in a GaAs metal-oxide-semiconductor (MOS) capacitor can be measured electrically by measuring its impedance, i.e. by exciting it with a small signal voltage source and measuring the resulting current through the circuit. We propose a new method of measuring D{sub it} where the MOS capacitor is subjected to a (time-varying) magnetic field instead, which produces an effect equivalent to a (time-varying) voltage drop across the sample. This happens because the electron chemical potential of GaAs changes with a change in an externally applied magnetic field (unlike that of the gate metal); this is not themore » voltage induced by Faraday’s law of electromagnetic induction. So, by measuring the current through the MOS, D{sub it} can be found similarly. Energy band diagrams and equivalent circuits of a MOS capacitor are drawn in the presence of a magnetic field, and analyzed. The way in which a magnetic field affects a MOS structure is shown to be fundamentally different compared to an electrical voltage source.« less

Protection of MOS capacitors during anodic bonding

NASA Astrophysics Data System (ADS)

Schjølberg-Henriksen, K.; Plaza, J. A.; Rafí, J. M.; Esteve, J.; Campabadal, F.; Santander, J.; Jensen, G. U.; Hanneborg, A.

2002-07-01

We have investigated the electrical damage by anodic bonding on CMOS-quality gate oxide and methods to prevent this damage. n-type and p-type MOS capacitors were characterized by quasi-static and high-frequency CV-curves before and after anodic bonding. Capacitors that were bonded to a Pyrex wafer with 10 μm deep cavities enclosing the capacitors exhibited increased leakage current and interface trap density after bonding. Two different methods were successful in protecting the capacitors from such damage. Our first approach was to increase the cavity depth from 10 μm to 50 μm, thus reducing the electric field across the gate oxide during bonding from approximately 2 × 105 V cm-1 to 4 × 104 V cm-1. The second protection method was to coat the inside of a 10 μm deep Pyrex glass cavity with aluminium, forming a Faraday cage that removed the electric field across the cavity during anodic bonding. Both methods resulted in capacitors with decreased interface trap density and unchanged leakage current after bonding. No change in effective oxide charge or mobile ion contamination was observed on any of the capacitors in the study.

Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces.

PubMed

Ward, Jeremy W; Smith, Hannah L; Zeidell, Andrew; Diemer, Peter J; Baker, Stephen R; Lee, Hyunsu; Payne, Marcia M; Anthony, John E; Guthold, Martin; Jurchescu, Oana D

2017-05-31

Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.

Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

NASA Astrophysics Data System (ADS)

Hsu, Sheng-Chia; Li, Yiming

2014-11-01

In this work, we study the impact of random interface traps (RITs) at the interface of SiO x /Si on the electrical characteristic of 16-nm-gate high-κ/metal gate (HKMG) bulk fin-type field effect transistor (FinFET) devices. Under the same threshold voltage, the effects of RIT position and number on the degradation of electrical characteristics are clarified with respect to different levels of RIT density of state ( D it). The variability of the off-state current ( I off) and drain-induced barrier lowering (DIBL) will be severely affected by RITs with high D it varying from 5 × 1012 to 5 × 1013 eV-1 cm-2 owing to significant threshold voltage ( V th) fluctuation. The results of this study indicate that if the level of D it is lower than 1 × 1012 eV-1 cm-2, the normalized variability of the on-state current, I off, V th, DIBL, and subthreshold swing is within 5%.

Statistical analysis of relationship between negative-bias temperature instability and random telegraph noise in small p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Tega, Naoki; Miki, Hiroshi; Mine, Toshiyuki; Ohmori, Kenji; Yamada, Keisaku

2014-03-01

It is demonstrated from a statistical perspective that the generation of random telegraph noise (RTN) changes before and after the application of negative-bias temperature instability (NBTI) stress. The NBTI stress generates a large number of permanent interface traps and, at the same time, a large number of RTN traps causing temporary RTN and one-time RTN. The interface trap and the RTN trap show different features in the recovery process. That is, a re-passivation of interface states is the minor cause of the recovery after the NBTI stress, and in contrast, rapid disappearance of the temporary RTN and the one-time RTN is the main cause of the recovery. The RTN traps are less likely to become permanent. This two-type trap, namely, the interface trap and RTN trap, model simply explains NBTI degradation and recovery in scaled p-channel metal-oxide-semiconductor field-effect transistors.

Noncontact evaluation for interface states by photocarrier counting

NASA Astrophysics Data System (ADS)

Furuta, Masaaki; Shimizu, Kojiro; Maeta, Takahiro; Miyashita, Moriya; Izunome, Koji; Kubota, Hiroshi

2018-03-01

We have developed a noncontact measurement method that enables in-line measurement and does not have any test element group (TEG) formation. In this method, the number of photocarriers excited from the interface states are counted which is called “photocarrier counting”, and then the energy distribution of the interface states density (D it) is evaluated by spectral light excitation. In our previous experiment, the method used was a preliminary contact measurement method at the oxide on top of the Si wafer. We developed, at this time, a D it measurement method as a noncontact measurement with a gap between the probes and the wafer. The shallow trench isolation (STI) sidewall has more localized interface states than the region under the gate electrode. We demonstrate the noncontact measurement of trapped carriers from interface states using wafers of three different crystal plane orientations. The demonstration will pave the way for evaluating STI sidewall interface states in future studies.

High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC

NASA Technical Reports Server (NTRS)

Tang, S. M.; Berry, W. B.; Kwor, R.; Zeller, M. V.; Matus, L. G.

1990-01-01

Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.

Degradation of the electrical characteristics of MOS structures with erbium, gadolinium, and dysprosium oxides under the effect of an electric field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shalimova, M. B., E-mail: shamb@samsu.ru; Sachuk, N. V.

2015-08-15

The degradation of the characteristics of silicon metal-oxide-semiconductor (MOS) structures with oxides of rare-earth elements under the effect of electric fields with intensities of 0.1–4 MV/cm during the course of electroforming is studied. A specific feature of electroforming consists in the possibility of multiple switching of the structures from the insulating state to the low-resistivity one and back. The temporal characteristics of the degradation of MOS structures during the course of electroforming are exponential. The current-voltage characteristics follow the power law in the range of 0.2–3 V; the effect of an electric field brings about a variation in the distributionmore » of the energy density of traps responsible for currents limited by space charge. It is established that multiple cycles of electroforming lead to an increase in the density of surface states at the Si-oxide interface and to a variation in the energy position of the trap levels, which affects the charge state of the traps.« less

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

NASA Astrophysics Data System (ADS)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

NASA Astrophysics Data System (ADS)

Bonilla, Ruy S.; Wilshaw, Peter R.

2017-04-01

The recombination of electric charge carriers at semiconductor surfaces continues to be a limiting factor in achieving high performance optoelectronic devices, including solar cells, laser diodes, and photodetectors. The theoretical model and a solution algorithm for surface recombination have been previously reported. However, their successful application to experimental data for a wide range of both minority excess carrier concentrations and dielectric fixed charge densities has not previously been shown. Here, a parametrisation for the semiconductor-dielectric interface charge Q i t is used in a Shockley-Read-Hall extended formalism to describe recombination at the c-Si/SiO2 interface, and estimate the physical parameters relating to the interface trap density D i t , and the electron and hole capture cross-sections σ n and σ p . This approach gives an excellent description of the experimental data without the need to invoke a surface damage region in the c-Si/SiO2 system. Band-gap tail states have been observed to limit strongly the effectiveness of field effect passivation. This approach provides a methodology to determine interface recombination parameters in any semiconductor-insulator system using macro scale measuring techniques.

Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

NASA Astrophysics Data System (ADS)

Xiang, An; Xu, Xingliang; Zhang, Lin; Li, Zhiqiang; Li, Juntao; Dai, Gang

2018-02-01

The conduction of current from n-4H-SiC into pyrogenic and dry oxidized films is studied. Anomalous current conduction was observed at a high electric field above 8 MV/cm for dry oxidized metal-oxide-semiconductor (MOS) capacitors, which cannot be interpreted in the framework of pure Fowler-Nordheim tunneling. The temperature-dependent current measurement and density of interface trap estimated from the hi-lo method for the SiO2/4H-SiC interface revealed that the combined current conduction of Fowler-Nordheim and Poole-Frenkel emission is responsible for the current conduction in both pyrogenic and dry oxidized MOS capacitors. Furthermore, the origin of temperature dependent current conduction is the Poole-Frenkel emission via the carbon pair defect trap level at 1.3 eV below the conduction band edge of SiO2. In addition, with the dry oxidized capacitors, the enhanced temperature dependent current above 8 MV/cm is attributed to the PF emission via a trap level at 1.47 eV below the conduction band edge of SiO2, which corresponds to another configuration of a carbon pair defect in SiO2 films.

Charge Trapping Properties of Ge Nanocrystals Grown via Solid-State Dewetting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, Steven; Jadli, I.; Aouassa, M.

2018-05-04

In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affectsmore » the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.« less

Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.

PubMed

Panchal, A K; Rai, D K; Solanki, C S

2011-04-01

Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.

Determination of P3HT Trap Site Energies by Thermally Stimulated Current

NASA Astrophysics Data System (ADS)

Souza, J. F. P.; Serbena, J. P. M.; Kowalski, E. L.; Akcelrud, L. C.

2018-02-01

The thermal, electrical and morphological characterization of poly(3-hexylthiophene-2,5diyl) (P3HT) is presented and discussed. Thermal analyses revealed high glass transition, melting and degradation temperatures, indicating high stability of the polymer to annealings in the range 25-200°C. Electrical measurements were performed in spin-coated devices constructed using indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) in the sandwich structure ITO/PEDOT:PSS/P3HT/Al. The devices were thermally treated at 25°C, 100°C, 150°C, and 200°C prior to the measurements. Characteristic curves of current density versus voltage showed that the injection of charge carriers is governed by tunneling at high electric fields. Hole mobility was estimated by impedance spectroscopy, showing a maximum value of 8.6 × 10-5 cm2/Vs for annealed films at 150°C. A thermally stimulated current technique was used to analyze the trap density in the P3HT and its respective energies for all devices, presenting the lowest trap density for annealed films at 150°C. Morphological features observed by atomic force microscopy showed that the 150°C thermally treated film presents the best interface condition of the four investigated annealing temperatures.

Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.

PubMed

Kent, Tyler; Chagarov, Evgeniy; Edmonds, Mary; Droopad, Ravi; Kummel, Andrew C

2015-05-26

Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.

Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukuda, Yukio; Otani, Yohei; Okamoto, Hiroshi

2011-09-26

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surfacemore » can move from the valence band edge to the conduction band edge.« less

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi

We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situmore » ALD process to avoid the high-temperature-induced degradations.« less

Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel.

PubMed

Park, Ji Hoon; Lee, Young Tack; Lee, Hee Sung; Lee, Jun Young; Lee, Kimoon; Lee, Gyu Baek; Han, Jiwon; Kim, Tae Woong; Im, Seongil

2013-03-13

The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little Vth shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.

Light trapping in thin-film solar cells with randomly rough and hybrid textures.

PubMed

Kowalczewski, Piotr; Liscidini, Marco; Andreani, Lucio Claudio

2013-09-09

We study light-trapping in thin-film silicon solar cells with rough interfaces. We consider solar cells made of different materials (c-Si and μc-Si) to investigate the role of size and nature (direct/indirect) of the energy band gap in light trapping. By means of rigorous calculations we demonstrate that the Lambertian Limit of absorption can be obtained in a structure with an optimized rough interface. We gain insight into the light trapping mechanisms by analysing the optical properties of rough interfaces in terms of Angular Intensity Distribution (AID) and haze. Finally, we show the benefits of merging ordered and disordered photonic structures for light trapping by studying a hybrid interface, which is a combination of a rough interface and a diffraction grating. This approach gives a significant absorption enhancement for a roughness with a modest size of spatial features, assuring good electrical properties of the interface. All the structures presented in this work are compatible with present-day technologies, giving recent progress in fabrication of thin monocrystalline silicon films and nanoimprint lithography.

Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw; Yang, Cheng-Yi; Lee, Fang-Wei

2015-10-21

This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy resultsmore » showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.« less

The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD.

PubMed

Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

2017-12-01

The capacitance and leakage current properties of multilayer La 2 O 3 /Al 2 O 3 dielectric stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La 2 O 3 /Al 2 O 3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO 3 dielectric film, compared with multilayer La 2 O 3 /Al 2 O 3 dielectric stacks, a clear promotion of trapped charges density (N ot ) and a degradation of interface trap density (D it ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO 3 dielectric film compared with multilayer La 2 O 3 /Al 2 O 3 stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La 2 O 3 /Al 2 O 3 stack is achieved after annealing at a higher temperature for its less defects.

Surface acceptor states in MBE-grown CdTe layers

NASA Astrophysics Data System (ADS)

Wichrowska, Karolina; Wosinski, Tadeusz; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

2018-04-01

A deep-level hole trap associated with surface defect states has been revealed with deep-level transient spectroscopy investigations of metal-semiconductor junctions fabricated on nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. The trap displayed the hole-emission activation energy of 0.33 eV and the logarithmic capture kinetics indicating its relation to extended defect states at the metal-semiconductor interface. Strong electric-field-induced enhancement of the thermal emission rate of holes from the trap has been attributed to the phonon-assisted tunneling effect from defect states involving very large lattice relaxation around the defect and metastability of its occupied state. Passivation with ammonium sulfide of the CdTe surface, prior to metallization, results in a significant decrease in the trap density. It also results in a distinct reduction in the width of the surface-acceptor-state-induced hysteresis loops in the capacitance vs. voltage characteristics of the metal-semiconductor junctions.

Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices

NASA Astrophysics Data System (ADS)

Jang, Jun Tae; Ko, Daehyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Yu, Hye Ri; Ahn, Geumho; Jung, Haesun; Rhee, Jihyun; Lee, Heesung; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan

2018-02-01

In this study, we investigated how the structure and oxygen flow rate (OFR) during the sputter-deposition affects the photo-responses of amorphous indium-gallium-zinc-oxide (a-IGZO)-based photodetector devices. As the result of comparing three types of device structures with one another, which are a global Schottky diode, local Schottky diode, and thin-film transistor (TFT), the IGZO TFT with the gate pulse technique suppressing the persistent photoconductivity (PPC) is the most promising photodetector in terms of a high photo-sensitivity and uniform sensing characteristic. In order to analyze the IGZO TFT-based photodetectors more quantitatively, the time-evolution of sub-gap density-of-states (DOS) was directly observed under photo-illumination and consecutively during the PPC-compensating period with applying the gate pulse. It shows that the increased ionized oxygen vacancy (VO2+) defects under photo-illumination was fully recovered by the positive gate pulse and even overcompensated by additional electron trapping. Based on experimentally extracted sub-gap DOS, the origin on PPC was successfully decomposed into the hole trapping and the VO ionization. Although the VO ionization is enhanced in lower OFR (O-poor) device, the PPC becomes more severe in high OFR (O-rich) device because the hole trapping dominates the PPC in IGZO TFT under photo-illumination rather than the VO ionization and more abundant holes are trapped into gate insulator and/or interface in O-rich TFTs. Similarly, the electron trapping during the PPC-compensating period with applying the positive gate pulse becomes more prominent in O-rich TFTs. It is attributed to more hole/electron traps in the gate insulator and/or interface, which is associated with oxygen interstitials, or originates from the ion bombardment-related lower quality gate oxide in O-rich devices.

Role of Hole Trap Sites in MoS2 for Inconsistency in Optical and Electrical Phenomena.

PubMed

Tran, Minh Dao; Kim, Ji-Hee; Kim, Hyun; Doan, Manh Ha; Duong, Dinh Loc; Lee, Young Hee

2018-03-28

Because of strong Coulomb interaction in two-dimensional van der Waals-layered materials, the trap charges at the interface strongly influence the scattering of the majority carriers and thus often degrade their electrical properties. However, the photogenerated minority carriers can be trapped at the interface, modulate the electron-hole recombination, and eventually influence the optical properties. In this study, we report the role of the hole trap sites on the inconsistency in the electrical and optical phenomena between two systems with different interfacial trap densities, which are monolayer MoS 2 -based field-effect transistors (FETs) on hexagonal boron nitride (h-BN) and SiO 2 substrates. Electronic transport measurements indicate that the use of h-BN as a gate insulator can induce a higher n-doping concentration of the monolayer MoS 2 by suppressing the free-electron transfer from the intrinsically n-doped MoS 2 to the SiO 2 gate insulator. Nevertheless, optical measurements show that the electron concentration in MoS 2 /SiO 2 is heavier than that in MoS 2 /h-BN, manifested by the relative red shift of the A 1g Raman peak. The inconsistency in the evaluation of the electron concentration in MoS 2 by electrical and optical measurements is explained by the trapping of the photogenerated holes in the spatially modulated valence band edge of the monolayer MoS 2 caused by the local strain from the SiO 2 /Si substrate. This photoinduced electron doping in MoS 2 /SiO 2 is further confirmed by the development of the trion component in the power-dependent photoluminescence spectra and negative shift of the threshold voltage of the FET after illumination.

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices

NASA Astrophysics Data System (ADS)

Jia, Yifan; Lv, Hongliang; Niu, Yingxi; Li, Ling; Song, Qingwen; Tang, Xiaoyan; Li, Chengzhan; Zhao, Yanli; Xiao, Li; Wang, Liangyong; Tang, Guangming; Zhang, Yimen; Zhang, Yuming

2016-09-01

The effect of nitric oxide (NO) annealing on charge traps in the oxide insulator and transition layer in n-type 4H-SiC metal-oxide-semiconductor (MOS) devices has been investigated using the time-dependent bias stress (TDBS), capacitance-voltage (C-V), and secondary ion mass spectroscopy (SIMS). It is revealed that two main categories of charge traps, near interface oxide traps (Nniot) and oxide traps (Not), have different responses to the TDBS and C-V characteristics in NO-annealed and Ar-annealed samples. The Nniot are mainly responsible for the hysteresis occurring in the bidirectional C-V characteristics, which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor. However, Not is mainly responsible for the TDBS induced C-V shifts. Electrons tunneling into the Not are hardly released quickly when suffering TDBS, resulting in the problem of the threshold voltage stability. Compared with the Ar-annealed sample, Nniot can be significantly suppressed by the NO annealing, but there is little improvement of Not. SIMS results demonstrate that the Nniot are distributed within the transition layer, which correlated with the existence of the excess silicon. During the NO annealing process, the excess Si atoms incorporate into nitrogen in the transition layer, allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot. Project supported by the National Natural Science Foundation of China (Grant Nos. 61404098 and 61274079), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), the National Grid Science & Technology Project, China (Grant No. SGRI-WD-71-14-018), and the Key Specific Project in the National Science & Technology Program, China (Grant Nos. 2013ZX02305002-002 and 2015CB759600).

Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen

2015-08-31

The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant ofmore » 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.« less

A biomolecular detection method based on charge pumping in a nanogap embedded field-effect-transistor biosensor

NASA Astrophysics Data System (ADS)

Kim, Sungho; Ahn, Jae-Hyuk; Park, Tae Jung; Lee, Sang Yup; Choi, Yang-Kyu

2009-06-01

A unique direct electrical detection method of biomolecules, charge pumping, was demonstrated using a nanogap embedded field-effect-transistor (FET). With aid of a charge pumping method, sensitivity can fall below the 1 ng/ml concentration regime in antigen-antibody binding of an avian influenza case. Biomolecules immobilized in the nanogap are mainly responsible for the acute changes of the interface trap density due to modulation of the energy level of the trap. This finding is supported by a numerical simulation. The proposed detection method for biomolecules using a nanogap embedded FET represents a foundation for a chip-based biosensor capable of high sensitivity.

Quantum Corrections to the 'Atomistic' MOSFET Simulations

NASA Technical Reports Server (NTRS)

Asenov, Asen; Slavcheva, G.; Kaya, S.; Balasubramaniam, R.

2000-01-01

We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D 'atomistic' MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.

Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

NASA Astrophysics Data System (ADS)

Liu, Chen; Lü, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

2018-06-01

Interfacial and electrical properties were investigated on metal-oxidesemiconductor capacitors (MOSCAPs) fabricated with bilayer ZnO/ZrO2 films by atomic layer deposition (ALD) on p-In0.2Ga0.8As substrates. The ZnO passivated In0.2Ga0.8As MOSCAPs have exhibited significantly improved capacitance-voltage (C-V) characteristics with the suppressed "stretched out" effect, increased accumulation capacitance and reduced accumulation frequency dispersion as well as the lower gate leakage current. In addition, the interface trap density (Dit) estimated by the Terman method was decreased dramatically for ZnO passivated p-In0.2Ga0.8As. The inherent mechanism is attributed to the fact that an ultrathin ZnO IPL employed by ALD prior to ZrO2 dielectric deposition can effectively suppress the formation of defect-related low-k oxides and As-As dimers at the interface, thus effectively improving the interface quality by largely removing the border traps aligned near the valence band edge of the p-In0.2Ga0.8As substrate.

Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

NASA Astrophysics Data System (ADS)

Zhu, Wencong

Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because of its shorter channel length and wider width, however, it also exhibit higher gate leakage current (>10-7 A) than side channel (<10-7 A) due to larger Ga ion implantation and diffusion region in SiO2 after annealing. Hysteresis window increase and positive VON shift were also observed due to the interface trap density increase and carrier density suppression both by Ga ions. Laser interference lithography was applied to define the IGZO active region, which gives more flexibility on TFT channel dimension and circuit modification. He-Cd laser with 325 nm wavelength was used to define 2D array of IGZO islands with period of 2.5 im. Logic gate array was designed and fabricated by combining this 2D array of IGZO islands and FIB direct channel milling. After annealing, device shows on-off feature, but high temperature (400 °C) release more free carrier and results in negative shift of VON. The row selection voltage was also introduced in the design of logic gate array to act as switch of input signals to each row separately. However, due to the long input signal sweeping time, the leakage current cannot be overlooked. The idea can be verified by AC or short pulse input signal.

Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Kim, Hyeran; Seo, Soonjoo; Lee, Hyun Uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam

2017-09-01

Electric field-induced charge trapping and exciton dissociation were demonstrated at a penatcene/grapheme quantum dot (GQD) interface using a bottom contact bi-layer field effect transistor (FET) as an electrical nano-probe. Large threshold voltage shift in a pentacene/GQD FET in the dark arises from field-induced carrier trapping in the GQD layer or GQD-induced trap states at the pentacene/GQD interface. As the gate electric field increases, hysteresis characterized by the threshold voltage shift depending on the direction of the gate voltage scan becomes stronger due to carrier trapping associated with the presence of a GQD layer. Upon illumination, exciton dissociation and gate electric field-induced charge trapping simultaneously contribute to increase the threshold voltage window, which can potentially be exploited for photoelectric memory and/or photovoltaic devices through interface engineering.

Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling

NASA Astrophysics Data System (ADS)

Racko, Juraj; Benko, Peter; Mikolášek, Miroslav; Granzner, Ralf; Kittler, Mario; Schwierz, Frank; Harmatha, Ladislav; Breza, Juraj

2017-02-01

The contribution employs electrical simulation to assess the effect of the distribution of aluminium in the metal/GaN/AlGaN heterostructure on the leakage current. The heterostructure is characterized by a high density of traps causing an increase of the leakage current consisting of the thermionic emission component and of a non-negligible contribution of trap-assisted tunnelling. The leakage current is highly sensitive to the bending of the potential barrier Ec in the subsurface region of the GaN/AlGaN structure. The band bending is strongly affected by the sheet bound charge at the first GaN/AlGaN/GaN interface due to spontaneous and piezoelectric polarization. The overall charge depends on the concentration of Al, the distribution of Al at the first heterointerface having a strong effect on the formation of the potential barrier.

C70/C70:pentacene/pentacene organic heterojunction as the connecting layer for high performance tandem organic light-emitting diodes: Mechanism investigation of electron injection and transport

NASA Astrophysics Data System (ADS)

Guo, Qingxun; Yang, Dezhi; Chen, Jiangshan; Qiao, Xianfeng; Ahamad, Tansir; Alshehri, Saad M.; Ma, Dongge

2017-03-01

A high performance tandem organic light-emitting diode (OLED) is realized by employing a C70/C70:pentacene/pentacene organic heterojunction as the efficient charge generation layer (CGL). Not only more than two time enhancement of external quantum efficiency but also significant improvement in both power efficiency and lifetime are well achieved. The mechanism investigations find that the electron injection from the CGL to the adjacent electron transport layer (ETL) in tandem devices is injection rate-limited due to the high interface energy barrier between the CGL and the ETL. By the capacitance-frequency (C-F) and low temperature current density-voltage (J-V) characteristic analysis, we confirm that the electron transport is a space-charge-limited current process with exponential trap distribution. These traps are localized states below the lowest unoccupied molecular orbital edge inside the gap and would be filled with the upward shift of the Fermi level during the n-doping process. Furthermore, both the trap density (Ht) and the activation energy (Ea) could be carefully worked out through low temperature J-V measurements, which is very important for developing high performance tandem OLEDs.

Interface Superconductivity in Cuprates Defies Fermi-Liquid Description

DOE PAGES

Radović, Zoran; Vanević, Mihajlo; Wu, Jie; ...

2016-07-26

La 2-xSr xCuO 4/La 2CuO 4 bilayers show interface superconductivity that originates from accumulation and depletion of mobile charge carriers across the interface. Surprisingly, the doping level can be varied broadly (within the interval 0.15 < x < 0.47) without affecting the transition temperature, which stays essentially constant and equal to that in optimally doped material, T c ≈ 40 K. Here we argue that this finding implies that doping up to the optimum level does not shift the chemical potential, unlike in ordinary Fermi liquids. Lastly, we discuss possible physical scenarios that can give doping-independent chemical potential in themore » pseudogap regime: electronic phase separation, formation of charge-density waves, strong Coulomb interactions, or self-trapping of mobile charge carriers.« less

Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors

PubMed Central

Fan, Ching-Lin; Shang, Ming-Chi; Wang, Shea-Jue; Hsia, Mao-Yuan; Lee, Win-Der; Huang, Bohr-Ran

2017-01-01

In this study, a proposed Microwave-Induction Heating (MIH) scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO) metal below the Poly(4-vinylphenol) (PVP) film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit) was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min) and low-power microwave-irradiation (50 W). PMID:28773101

Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors.

PubMed

Fan, Ching-Lin; Shang, Ming-Chi; Wang, Shea-Jue; Hsia, Mao-Yuan; Lee, Win-Der; Huang, Bohr-Ran

2017-07-03

In this study, a proposed Microwave-Induction Heating (MIH) scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO) metal below the Poly(4-vinylphenol) (PVP) film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit) was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min) and low-power microwave-irradiation (50 W).

Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

NASA Astrophysics Data System (ADS)

Shaneyfelt, M. R.; Schwank, J. R.; Fleetwood, D. M.; Winokur, P. S.; Hughes, K. L.

1990-12-01

The electric field dependence of radiation-induced oxide- and interface-trap charge (Delta Vot and Delta Vit) generation for polysilicon- and metal-gate MOS transistors is investigated at electric fields (Eox) from -4.2 MV/cm to +4.7 MV/cm. If electron-hole recombination effects are taken into account, the absolute value of Delta Vot and the saturated value of Delta Vit for both polysilicon- and metal-gate transistors are shown to follow an approximate E exp -1/2 field dependence for Eox = 0.4 MV/cm or greater. An E exp -1/2 dependence for the saturated value of Delta Vit was also observed for negative-bias irradiation followed by a constant positive-bias anneal. The E exp -1/2 field dependence observed suggests that the total number of interface traps created in these devices may be determined by hole trapping near the Si/SiO2 interface for positive-bias irradiation or near the gate/SiO2 interface for negative bias irradiation, though H+ drift remains the likely rate-limiting step in the process. Based on these results, a hole-trapping/hydrogen transport model-involving hole trapping and subsequent near-interfacial H+ release, transport, and reaction at the interface-is proposed as a possible explanation of Delta Vit buildup in these polysilicon- and metal-gate transistors.

Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazlov, N., E-mail: n.bazlov@spbu.ru; Pilipenko, N., E-mail: nelly.pilipenko@gmail.com; Vyvenko, O.

2016-06-17

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained trapsmore » of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.« less

95 MeV oxygen ion irradiation effects on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ke, S. C.; Siddappa, K.

2003-09-01

The N-channel metal oxide semiconductor field effect transistors (MOSFETs) were exposed to 95 MeV oxygen ions, in the fluence range of 5 x 10(10) to 5 x 10(13) ions/cm(2). The influence of ion irradiation on threshold voltage (V-TH), linear drain current (I-DLin), leakage current (I-L), drain conductance (g(D)), transconductance (g(m)), mobility (mu) and drain saturation current (I-DSat) of MOSFETs was studied systematically for various fluence. The V-TH of the irradiated MOSFET was found to decrease significantly after irradiation. The interface (N-it) and oxide trapped charge (N-ot) were estimated from the subthreshold measurements and were found to increase after irradiation. The densities of oxide-trapped (DeltaN(it)) charge in irradiated MOSFETs were found to he higher than those of the interface trapped charge (DeltaN(ot)). The I-DLin and I-Dsat of MOSFETs were also found to decrease significantly after irradiation. Studies on effects of 95 MeV oxygen ion irradiation on g(m), g(D) and mu show a degradation varying front 70 to 75% after irradiation. The mobility degradation coefficients for N-it(alpha(it)) and N-ot(alpha(it)) were estimated. The results of these studies are presented and discussed.

Measurements, modeling, and simulation of semiconductor/gate dielectric defects using random telegraph signals

NASA Astrophysics Data System (ADS)

Nour, Mohamed

Constructing an effective statistical model and a simulation tool that can predict the phenomenon of random telegraph signals (RTS) is the objective of this work. The continuous scaling down of metal oxide -- semiconductor field effect transistors (MOSFETs) makes charging/discharging traps(s) located at the silicon/silicon dioxide interface or deep in the oxide bulk by mobile charge(s) a more pronounced problem for both analog and digital applications. The intent of this work is to develop an RTS statistical model and a simulation tool based on first principles and supported by extensive experimental data. The newly developed RTS statistical model and its simulation tool should be able to replicate and predict the RTS in time and frequency domains. First, room temperature RTS measurements are performed which provide limited information about the trap. They yield the extraction of some trap and RTS characteristics such as average capture and emission times associated with RTS traces, trap position in the oxide with respect to the Si/SiO 2 interface and along the channel with respect to the source, capture cross section, and trap energies in the Si and SiO2 band -- gaps. Variable temperature measurements, on the other hand, yield much more valuable information. Variable temperature RTS measurements from room temperature down to 80 K were performed, with the MOSFET biased from threshold voltage to strong inversion, in the linear and saturation regions. Variable temperature RTS measurements yield the extraction of trap characteristics such as capture cross -- section prefactor, capture and emission activation energies, change in entropy and enthalpy, and relaxation energy associated with a trap from which the nature and origin of a defect center can be identified. The newly developed Random Telegraph Signals Simulation (RTSSIM) is based on several physical principles and mechanisms e.g. (1) capturing and emitting a mobile charge from and to the channel is governed by phonon- assisted- tunneling, (2) traps only within a few kBT of the Fermi energy level are considered electrically active, (3) trap density is taken as U -- shaped in energy in the silicon band-gap, (4) device scalability is accounted for, (5) and temperature dependence of all parameters is considered. RTSSIM reconstructs the RTS traces in time domain from which the power spectral density (PSD) is evaluated. If there is 20 or more active traps, RTSSIM evaluates the PSD from the superposition of the RTS spectra. RTSSIM extracts RTS and trap characteristics from the simulated RTS data and outputs them to MS Excel files for further analyses and study. The novelty of this work is: (1) it is the first time quantum trap states have been accurately assigned to each switching level in a complex RTS corresponding to dependently and independently interacting traps, (2) new physics-based measurement-driven model and simulation tool has been developed for RTS phenomenon in a MOSFET, (3) and it is the first time a species in SiO2 responsible for RTS has been identified through time-domain measurements and extensive analysis using four trap characteristics at the same time.

Effects of Molybdenum Addition on Hydrogen Desorption of TiC Precipitation-Hardened Steel

NASA Astrophysics Data System (ADS)

Song, Eun Ju; Baek, Seung-Wook; Nahm, Seung Hoon; Suh, Dong-Woo

2018-05-01

The hydrogen-trap states in TiC and MoC that have coherent interfaces with ferrite were investigated using first-principles calculation. The trapping sites of TiC were the interfaces and interstitial sites of ferrite. On the other hand, the trapping sites of MoC were ferrite interstitial sites; the interface had a negative binding energy with H. Thermal desorption analysis confirms that the amounts of diffusible hydrogen were significantly reduced by addition of Mo in Ti-bearing steel.

Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors

NASA Astrophysics Data System (ADS)

Jung, Haesun; Choi, Sungju; Jang, Jun Tae; Yoon, Jinsu; Lee, Juhee; Lee, Yongwoo; Rhee, Jihyun; Ahn, Geumho; Yu, Hye Ri; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan

2018-02-01

We propose a universal model for bias-stress (BS)-induced instability in the inkjet-printed carbon nanotube (CNT) networks used in field-effect transistors (FETs). By combining two experimental methods, i.e., a comparison between air and vacuum BS tests and interface trap extraction, BS instability is explained regardless of either the BS polarity or ambient condition, using a single platform constituted by four key factors: OH- adsorption/desorption followed by a change in carrier concentration, electron concentration in CNT channel corroborated with H2O/O2 molecules in ambient, charge trapping/detrapping, and interface trap generation. Under negative BS (NBS), the negative threshold voltage shift (ΔVT) is dominated by OH- desorption, which is followed by hole trapping in the interface and/or gate insulator. Under positive BS (PBS), the positive ΔVT is dominated by OH- adsorption, which is followed by electron trapping in the interface and/or gate insulator. This instability is compensated by interface trap extraction; PBS instability is slightly more complicated than NBS instability. Furthermore, our model is verified using device simulation, which gives insights on how much each mechanism contributes to BS instability. Our result is potentially useful for the design of highly stable CNT-based flexible circuits in the Internet of Things wearable healthcare era.

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

NASA Astrophysics Data System (ADS)

Teffahi, A.; Hamri, D.; Djeghlouf, A.; Abboun Abid, M.; Saidane, A.; Al Saqri, N.; Felix, J. F.; Henini, M.

2018-06-01

Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90-290 K temperature range and 50-2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (ε') shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependant ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200-290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect.

Seasonal and spatial variations in microbial activity at various phylogenetic resolutions at a groundwater - surface water interface.

PubMed

Yu, Ran; Smets, Barth F; Gan, Ping; MacKay, Allison A; Graf, Joerg

2014-05-01

We investigated the seasonal and spatial variation in activity and density of the metabolically active in situ microbial community (AIMC) at a landfill leachate-impacted groundwater - surface water interface (GSI). A series of AIMC traps were designed and implemented for AIMC sampling and microbial activity and density examinations. Measurements were made not only at the level of bacterial domain but also at the levels of alphaproteobacterial Rhizobiales order and gammaproteobacterial Pseudomonas genus, both of which included a large number of iron-oxidizing bacteria as revealed from previous analysis. Consistently higher microbial activities with less variation in depth were measured in the AIMC traps than in the ambient sediments. Flood disturbance appeared to control AIMC activity distributions at the gradually elevated GSI. The highest AIMC activities were generally obtained from locations closest to the free surface water boundary except during the dry season when microbial activities were similar across the entire GSI. A clone library of AIMC 16S rRNA genes was constructed, and it confirmed the predominant role of the targeted alphaproteobacterial group in AIMC activity and composition. This taxon constituted 2%-14% of all bacteria with similar activity distribution profiles. The Pseudomonas group occupied only 0.1‰-0.5‰ of the total bacterial density, but its activity was 27 times higher than the bacterial average. Of the 16S rRNA sequences in the AIMC clone library, 7.5% were phylogenetically related to putative IOB, supporting the occurrence and persistence of active microbial iron oxidation across the studied iron-rich GSI ecosystem.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tewari, Somesh Vinayak, E-mail: somesh-vinayak@yahoo.com, E-mail: svtewari@barc.gov.in; Sharma, Archana; Mittal, K. C.

An experimental investigation of surface flashover characteristics of PMMA and POM is studied in compressed nitrogen gas environment with nitrogen as the background gas. The operating pressure range is from 1kg/cm{sup 2} to 4kg/cm{sup 2}. It is observed that the breakdown voltage of PMMA is higher than POM owing to a higher permittivity mismatch between POM- nitrogen interface as compared to the PMMA- nitrogen interface. The reduction in spacer efficiency with pressure for PMMA is 11% as compared to POM which shows a higher reduction of 18%. This paper further emphasizes on the role of energy level and density ofmore » charge carrier trapping centers for a reduced breakdown voltage in POM as compared to PMMA.« less

Molecular dynamics modeling of helium bubbles in austenitic steels

NASA Astrophysics Data System (ADS)

Jelea, A.

2018-06-01

The austenitic steel devices from pressurized water reactors are continuously subjected to neutron irradiation that produces crystalline point defects and helium atoms in the steel matrix. These species evolve into large defects such as dislocation loops and helium filled bubbles. This paper analyzes, through molecular dynamics simulations with recently developed interatomic potentials, the impact of the helium/steel interface on the helium behavior in nanosize bubbles trapped in an austenitic steel matrix. It is shown that the repulsive helium-steel interactions induce higher pressures in the bubble compared to bulk helium at the same temperature and average density. A new equation of state for helium is proposed in order to take into account these interface effects.

Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process

PubMed Central

Yun, Myeong Gu; Kim, Ye Kyun; Ahn, Cheol Hyoun; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun; Kim, Yong-Hoon

2016-01-01

We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fabricated using atomic layer deposition (ALD)-derived Al2O3 gate insulators. The surfaces of the Al2O3 gate insulators are damaged by ion bombardment during the deposition of the IGZO channel layers by sputtering and the damage results in the hysteresis behavior of the photo-TFTs. The hysteresis loops broaden as the deposition power density increases. This implies that we can easily control the amount of the interface trap sites and/or trap sites in the gate insulator near the interface. The photo-TFTs with large hysteresis-related defects have high S/N ratio and fast recovery in spite of the low operation voltages including a drain voltage of 1 V, positive gate bias pulse voltage of 3 V, and gate voltage pulse width of 3 V (0 to 3 V). In addition, through the hysteresis-related defect-generating process, we have achieved a high responsivity since the bulk defects that can be photo-excited and eject electrons also increase with increasing deposition power density. PMID:27553518

Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, R.; Iwasaki, T.; Taoka, N.

2011-03-14

An electron cyclotron resonance (ECR) plasma postoxidation method has been employed for forming Al{sub 2}O{sub 3}/GeO{sub x}/Ge metal-oxide-semiconductor (MOS) structures. X-ray photoelectron spectroscopy and transmission electron microscope characterizations have revealed that a GeO{sub x} layer is formed beneath the Al{sub 2}O{sub 3} capping layer by exposing the Al{sub 2}O{sub 3}/Ge structures to ECR oxygen plasma. The interface trap density (D{sub it}) of Au/Al{sub 2}O{sub 3}/GeO{sub x}/Ge MOS capacitors is found to be significantly suppressed down to lower than 10{sup 11} cm{sup -2} eV{sup -1}. Especially, a plasma postoxidation time of as short as 10 s is sufficient to reduce D{submore » it} with maintaining the equivalent oxide thickness (EOT). As a result, the minimum D{sub it} values and EOT of 5x10{sup 10} cm{sup -2} eV{sup -1} and 1.67 nm, and 6x10{sup 10} cm{sup -2} eV{sup -1} and 1.83 nm have been realized for Al{sub 2}O{sub 3}/GeO{sub x}/Ge MOS structures with p- and n-type substrates, respectively.« less

Positron studies of metal-oxide-semiconductor structures

NASA Astrophysics Data System (ADS)

Au, H. L.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.

1993-03-01

Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.

Electrical characterization of plasma-grown oxides on gallium arsenide

NASA Technical Reports Server (NTRS)

Hshieh, F. I.; Bhat, K. N.; Ghandhi, S. K.; Borrego, J. M.

1985-01-01

Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.

Evaluation of trapping-web designs

USGS Publications Warehouse

Lukacs, P.M.; Anderson, D.R.; Burnham, K.P.

2005-01-01

The trapping web is a method for estimating the density and abundance of animal populations. A Monte Carlo simulation study is performed to explore performance of the trapping web for estimating animal density under a variety of web designs and animal behaviours. The trapping performs well when animals have home ranges, even if the home ranges are large relative to trap spacing. Webs should contain at least 90 traps. Trapping should continue for 5-7 occasions. Movement rates have little impact on density estimates when animals are confined to home ranges. Estimation is poor when animals do not have home ranges and movement rates are rapid. The trapping web is useful for estimating the density of animals that are hard to detect and occur at potentially low densities. ?? CSIRO 2005.

Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams

NASA Astrophysics Data System (ADS)

Uedono, Akira; Nabatame, Toshihide; Egger, Werner; Koschine, Tönjes; Hugenschmidt, Christoph; Dickmann, Marcel; Sumiya, Masatomo; Ishibashi, Shoji

2018-04-01

Defects in the Al2O3(25 nm)/GaN structure were probed by using monoenergetic positron beams. Al2O3 films were deposited on GaN by atomic layer deposition at 300 °C. Temperature treatment above 800 °C leads to the introduction of vacancy-type defects in GaN due to outdiffusion of atoms from GaN into Al2O3. The width of the damaged region was determined to be 40-50 nm from the Al2O3/GaN interface, and some of the vacancies were identified to act as electron trapping centers. In the Al2O3 film before and after annealing treatment at 300-900 °C, open spaces with three different sizes were found to coexist. The density of medium-sized open spaces started to decrease above 800 °C, which was associated with the interaction between GaN and Al2O3. Effects of the electron trapping/detrapping processes of interface states on the flat band voltage and the defects in GaN were also discussed.

Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Jong Woo; Nathan, Arokia, E-mail: an299@cam.ac.uk; Barquinha, Pedro

2016-08-15

Oxide semiconductor thin-film transistors can show anomalous behavior under bias stress. Two types of anomalies are discussed in this paper. The first is the shift in threshold voltage (V{sub TH}) in a direction opposite to the applied bias stress, and highly dependent on gate dielectric material. We attribute this to charge trapping/detrapping and charge migration within the gate dielectric. We emphasize the fundamental difference between trapping/detrapping events occurring at the semiconductor/dielectric interface and those occurring at gate/dielectric interface, and show that charge migration is essential to explain the first anomaly. We model charge migration in terms of the non-instantaneous polarizationmore » density. The second type of anomaly is negative V{sub TH} shift under high positive bias stress, with logarithmic evolution in time. This can be argued as electron-donating reactions involving H{sub 2}O molecules or derived species, with a reaction rate exponentially accelerated by positive gate bias and exponentially decreased by the number of reactions already occurred.« less

Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mooney, P. M.; Jiang, Zenan; Basile, A. F.

To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. Thesemore » are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.« less

Fabrication and characterization of active nanostructures

NASA Astrophysics Data System (ADS)

Opondo, Noah F.

Three different nanostructure active devices have been designed, fabricated and characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. Germanium junctionless transistors fabricated with a top down approach starting from a germanium on insulator substrate and using a gate stack of high-k dielectrics and GeO2 are also presented. The levels and origin of low-frequency noise in junctionless transistor devices fabricated from silicon nanowires and also from GeOI devices are reported. Low-frequency noise is an indicator of the quality of the material, hence its characterization can reveal the quality and perhaps reliability of fabricated transistors. A novel method based on low-frequency noise measurement to envisage trap density in the semiconductor bandgap near the semiconductor/oxide interface of nanoscale silicon junctionless transistors (JLTs) is presented. Low-frequency noise characterization of JLTs biased in saturation is conducted at different gate biases. The noise spectrum indicates either a Lorentzian or 1/f. A simple analysis of the low-frequency noise data leads to the density of traps and their energy within the semiconductor bandgap. The level of noise in silicon JLT devices is lower than reported values on transistors fabricated using a top-down approach. This noise level can be significantly improved by improving the quality of dielectric and the channel interface. A micro-vacuum electron device based on silicon field emitters for cold cathode emission is also presented. The presented work utilizes vertical Si nanowires fabricated by means of self-assembly, standard lithography and etching techniques as field emitters in this dissertation. To obtain a high nanowire density, hence a high current density, a simple and inexpensive Langmuir Blodgett technique to deposit silica nanoparticles as a mask to etch Si is adopted. Fabrication and characterization of a metal-gated microtriode with a high current density and low operating voltage are presented.

Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO2 interfaces

NASA Astrophysics Data System (ADS)

Huang, Jianqiu; Tea, Eric; Li, Guanchen; Hin, Celine

2017-06-01

The Anode Hydrogen Release (AHR) mechanism at interfaces is responsible for the generation of defects, that traps charge carriers and can induce dielectric breakdown in Metal-Oxide-Semiconductor Field Effect Transistors. The AHR has been extensively studied at Si/SiO2 interfaces but its characteristics at metal-silica interfaces remain unclear. In this study, we performed Density Functional Theory (DFT) calculations to study the hydrogen release mechanism at the typical Al/SiO2 metal-oxide interface. We found that interstitial hydrogen atoms can break interfacial Alsbnd Si bonds, passivating a Si sp3 orbital. Interstitial hydrogen atoms can also break interfacial Alsbnd O bonds, or be adsorbed at the interface on aluminum, forming stable Alsbnd Hsbnd Al bridges. We showed that hydrogenated Osbnd H, Sisbnd H and Alsbnd H bonds at the Al/SiO2 interfaces are polarized. The resulting bond dipole weakens the Osbnd H and Sisbnd H bonds, but strengthens the Alsbnd H bond under the application of a positive bias at the metal gate. Our calculations indicate that Alsbnd H bonds and Osbnd H bonds are more important than Sisbnd H bonds for the hydrogen release process.

In-line charge-trapping characterization of dielectrics for sub-0.5-um CMOS technologies

NASA Astrophysics Data System (ADS)

Roy, Pradip K.; Chacon, Carlos M.; Ma, Yi; Horner, Gregory

1997-09-01

The advent of ultra-large and giga-scale-integration (ULSI/GSI) has placed considerable emphasis on the development of new gate oxides and interlevel dielectrics capable of meeting strict performance and reliability requirements. The costs and demands associated with ULSI fabrication have in turn fueled the need for cost-effective, rapid and accurate in-line characterization techniques for evaluating dielectric quality. The use of non-contact surface photovoltage characterization techniques provides cost-effective rapid feedback on dielectric quality, reducing costs through the reutilization of control wafers and the elimination of processing time. This technology has been applied to characterize most of the relevant C-V parameters, including flatband voltage (Vfb), density of interface traps (Dit), mobile charge density (Qm), oxide thickness (Tox), oxide resistivity (pox) and total charge (Qtot) for gate and interlevel (ILO) oxides. A novel method of measuring tunneling voltage by this technique on various gate oxides is discussed. For ILO, PECVD and high density plasma dielectrics, surface voltage maps are also presented. Measurements of near-surface silicon quality are described, including minority carrier generation lifetime, and examples of their application in diagnosing manufacturing problems.

Improved organic thin-film transistor performance using novel self-assembled monolayers

NASA Astrophysics Data System (ADS)

McDowell, M.; Hill, I. G.; McDermott, J. E.; Bernasek, S. L.; Schwartz, J.

2006-02-01

Pentacene-based organic thin-film transistors have been fabricated using a phosphonate-linked anthracene self-assembled monolayer as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Vast improvements in the subthreshold slope and threshold voltage are observed compared to control devices fabricated without the buffer. Both observations are consistent with a greatly reduced density of charge trapping states at the semiconductor-dielectric interface effected by introduction of the self-assembled monolayer.

Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids.

PubMed

Boehme, Simon C; Azpiroz, Jon Mikel; Aulin, Yaroslav V; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J

2015-05-13

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact chemical nature of the trapping mechanism remains largely unidentified. In this study, we determine the density of trap states in CdTe quantum-dot solids both experimentally, using a combination of electrochemical control of the Fermi level with ultrafast transient absorption and time-resolved photoluminescence spectroscopy, and theoretically, via density functional theory calculations. We find a high density of very efficient electron traps centered ∼0.42 eV above the valence band. Electrochemical filling of these traps increases the electron lifetime and the photoluminescence quantum yield by more than an order of magnitude. The trapping rate constant for holes is an order of magnitude lower that for electrons. These observations can be explained by Auger-mediated electron trapping. From density functional theory calculations we infer that the traps are formed by dicoordinated Te atoms at the quantum dot surface. The combination of our unique experimental determination of the density of trap states with the theoretical modeling of the quantum dot surface allows us to identify the trapping mechanism and chemical reaction at play during charge trapping in these quantum dots.

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

NASA Astrophysics Data System (ADS)

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-01

The threshold voltage instabilities and huge hysteresis of MoS2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method.

PubMed

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-27

The threshold voltage instabilities and huge hysteresis of MoS 2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS 2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS 2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS 2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

NASA Astrophysics Data System (ADS)

Harmatha, Ladislav; Mikolášek, Miroslav; Stuchlíková, L'ubica; Kósa, Arpád; Žiška, Milan; Hrubčín, Ladislav; Skuratov, Vladimir A.

2015-11-01

The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm-2 to 5 × 1010 cm-2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

Low trap states in in situ SiN{sub x}/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Xing; Ma, Jun; Jiang, Huaxing

2014-09-08

We report the use of SiN{sub x} grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiN{sub x}/AlN interface exhibits remarkably low trap state densities in the range of 10{sup 11}–10{sup 12 }cm{sup −2}eV{sup −1}. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiN{sub x} layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiN{sub x} as an effectivemore » gate dielectric for AlN/GaN MIS devices.« less

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Estimating population density for disease risk assessment: The importance of understanding the area of influence of traps using wild pigs as an example.

PubMed

Davis, Amy J; Leland, Bruce; Bodenchuk, Michael; VerCauteren, Kurt C; Pepin, Kim M

2017-06-01

Population density is a key driver of disease dynamics in wildlife populations. Accurate disease risk assessment and determination of management impacts on wildlife populations requires an ability to estimate population density alongside management actions. A common management technique for controlling wildlife populations to monitor and mitigate disease transmission risk is trapping (e.g., box traps, corral traps, drop nets). Although abundance can be estimated from trapping actions using a variety of analytical approaches, inference is limited by the spatial extent to which a trap attracts animals on the landscape. If the "area of influence" were known, abundance estimates could be converted to densities. In addition to being an important predictor of contact rate and thus disease spread, density is more informative because it is comparable across sites of different sizes. The goal of our study is to demonstrate the importance of determining the area sampled by traps (area of influence) so that density can be estimated from management-based trapping designs which do not employ a trapping grid. To provide one example of how area of influence could be calculated alongside management, we conducted a small pilot study on wild pigs (Sus scrofa) using two removal methods 1) trapping followed by 2) aerial gunning, at three sites in northeast Texas in 2015. We estimated abundance from trapping data with a removal model. We calculated empirical densities as aerial counts divided by the area searched by air (based on aerial flight tracks). We inferred the area of influence of traps by assuming consistent densities across the larger spatial scale and then solving for area impacted by the traps. Based on our pilot study we estimated the area of influence for corral traps in late summer in Texas to be ∼8.6km 2 . Future work showing the effects of behavioral and environmental factors on area of influence will help mangers obtain estimates of density from management data, and determine conditions where trap-attraction is strongest. The ability to estimate density alongside population control activities will improve risk assessment and response operations against disease outbreaks. Published by Elsevier B.V.

Measurements of trap dynamics of cold OH molecules using resonance-enhanced multiphoton ionization

NASA Astrophysics Data System (ADS)

Gray, John M.; Bossert, Jason A.; Shyur, Yomay; Lewandowski, H. J.

2017-08-01

Trapping cold, chemically important molecules with electromagnetic fields is a useful technique to study small molecules and their interactions. Traps provide long interaction times, which are needed to precisely examine these low-density molecular samples. However, the trapping fields lead to nonuniform molecular density distributions in these systems. Therefore, it is important to be able to experimentally characterize the spatial density distribution in the trap. Ionizing molecules at different locations in the trap using resonance-enhanced multiphoton ionization (REMPI) and detecting the resulting ions can be used to probe the density distribution even at the low density present in these experiments because of the extremely high efficiency of detection. Until recently, one of the most chemically important molecules, OH, did not have a convenient REMPI scheme identified. Here, we use a newly developed 1 +1' REMPI scheme to detect trapped cold OH molecules. We use this capability to measure the trap dynamics of the central density of the cloud and the density distribution. These types of measurements can be used to optimize loading of molecules into traps, as well as to help characterize the energy distribution, which is critical knowledge for interpreting molecular collision experiments.

Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Persson, Ingemar; Nilsson, Daniel

A high mobility of 2250 cm{sup 2}/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm{sup 2}/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, andmore » trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.« less

Electrical in-situ characterisation of interface stabilised organic thin-film transistors

PubMed Central

Striedinger, Bernd; Fian, Alexander; Petritz, Andreas; Lassnig, Roman; Winkler, Adolf; Stadlober, Barbara

2015-01-01

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface stabilisation layer serves as the gate dielectric and pentacene is chosen as the organic semiconductor. The evolution of transistor parameters is studied on a bi-layer dielectric of a 150 nm of SiO2 and 20 nm of poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) and compared to the behaviour on a pure SiO2 dielectric. The thin layer of PNDPE, which is an intrinsically photo-patternable organic dielectric, shows an excellent stabilisation performance, significantly reducing the calculated interface trap density at the OSC/dielectric interface up to two orders of magnitude, and thus remarkably improving the transistor performance. PMID:26457122

SiO 2/SiC interface proved by positron annihilation

NASA Astrophysics Data System (ADS)

Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.

2003-06-01

We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2/SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage ( C- V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method.

Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Izumi, Kohei; Otani, Yohei; Ishizaki, Hiroki; Ono, Toshiro

2012-09-01

This paper reports on the thermal improvement of Si3N4/GeNx/Ge structures. After the Si3N4 (5 nm)/GeNx (2 nm) stacks were prepared on Ge substrates by electron-cyclotron-resonance plasma nitridation and sputtering at room temperature, they were thermally annealed in atmospheric N2 + 10% H2 ambient at temperatures from 400 to 600 °C. It was demonstrated that the electronic properties of the GeNx/Ge interfaces were thermally improved at temperatures of up to 500 °C with a minimum interface trap density (Dit) of ˜1×1011 cm-2 eV-1 near the Ge midgap, whereas the interface properties were slightly degraded after annealing at 600 °C with a minimum Dit value of ˜4×1011 cm-2 eV-1.

Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

NASA Astrophysics Data System (ADS)

Kuo, Tai-Chen; Shih, Tzu-Lang; Su, Yin-Hsien; Lee, Wen-Hsi; Current, Michael Ira; Samukawa, Seiji

2018-04-01

In this study, TiN/HfO2/Si metal-oxide-semiconductor (MOS) capacitors were etched by a neutral beam etching technique under two contrasting conditions. The configurations of neutral beam etching technique were specially designed to demonstrate a "damage-free" condition or to approximate "reactive-ion-etching-like" conditions to verify the effect of plasma-induced damage on electrical characteristics of MOS capacitors. The results show that by neutral beam etching (NBE), the interface state density (Dit) and the oxide trapped charge (Qot) were lower than routine plasma etching. Furthermore, the decrease in capacitor size does not lead to an increase in leakage current density, indicating less plasma induced side-wall damage. We present a plasma-induced gate stack damage model which we demonstrate by using these two different etching configurations. These results show that NBE is effective in preventing plasma-induced damage at the high-k/Si interface and on the high-k oxide sidewall and thus improve the electrical performance of the gate structure.

Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface

NASA Astrophysics Data System (ADS)

Kotipalli, R.; Vermang, B.; Joel, J.; Rajkumar, R.; Edoff, M.; Flandre, D.

2015-10-01

Atomic layer deposited (ALD) Al2O3 films on Cu(In,Ga)Se2 (CIGS) surfaces have been demonstrated to exhibit excellent surface passivation properties, which is advantageous in reducing recombination losses at the rear metal contact of CIGS thin-film solar cells. Here, we report, for the first time, experimentally extracted electronic parameters, i.e. fixed charge density (Qf) and interface-trap charge density (Dit), for as-deposited (AD) and post-deposition annealed (PDA) ALD Al2O3 films on CIGS surfaces using capacitance-voltage (C-V) and conductance-frequency (G-f) measurements. These results indicate that the AD films exhibit positive fixed charges Qf (approximately 1012 cm-2), whereas the PDA films exhibit a very high density of negative fixed charges Qf (approximately 1013 cm-2). The extracted Dit values, which reflect the extent of chemical passivation, were found to be in a similar range of order (approximately 1012 cm-2 eV-1) for both AD and PDA samples. The high density of negative Qf in the bulk of the PDA Al2O3 film exerts a strong Coulomb repulsive force on the underlying CIGS minority carriers (ns), preventing them to recombine at the CIGS/Al2O3 interface. Using experimentally extracted Qf and Dit values, SCAPS simulation results showed that the surface concentration of minority carriers (ns) in the PDA films was approximately eight-orders of magnitude lower than in the AD films. The electrical characterization and estimations presented in this letter construct a comprehensive picture of the interfacial physics involved at the Al2O3/CIGS interface.

IGDS/TRAP Interface Program (ITIP). Software User Manual (SUM). [network flow diagrams for coal gasification studies

NASA Technical Reports Server (NTRS)

Jefferys, S.; Johnson, W.; Lewis, R.; Rich, R.

1981-01-01

This specification establishes the requirements, concepts, and preliminary design for a set of software known as the IGDS/TRAP Interface Program (ITIP). This software provides the capability to develop at an Interactive Graphics Design System (IGDS) design station process flow diagrams for use by the NASA Coal Gasification Task Team. In addition, ITIP will use the Data Management and Retrieval System (DMRS) to maintain a data base from which a properly formatted input file to the Time-Line and Resources Analysis Program (TRAP) can be extracted. This set of software will reside on the PDP-11/70 and will become the primary interface between the Coal Gasification Task Team and IGDS, DMRS, and TRAP. The user manual for the computer program is presented.

Atomic layer deposition TiO 2-Al 2O 3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

DOE PAGES

Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; ...

2014-10-15

This research focuses on the benefits and properties of TiO 2-Al 2O 3 nano-stack thin films deposited on Ga 2O 3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2, 7.1 nm Al 2O 3 and 2 nm Ga 2O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectronmore » spectroscopy (XPS) depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO 2-Al 2O 3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al 2O 3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 10 11 cm -2. The gate leakage current density (J=2.81× 10 -8 A/cm 2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO 2/Al 2O 3 for serving as the gate oxide on Ga 2O 3/GaN based MOS devices.« less

Atomic layer deposition TiO 2-Al 2O 3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Daming; Edgar, James H.; Briggs, Dayrl P.

This research focuses on the benefits and properties of TiO 2-Al 2O 3 nano-stack thin films deposited on Ga 2O 3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2, 7.1 nm Al 2O 3 and 2 nm Ga 2O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectronmore » spectroscopy (XPS) depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO 2-Al 2O 3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al 2O 3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 10 11 cm -2. The gate leakage current density (J=2.81× 10 -8 A/cm 2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO 2/Al 2O 3 for serving as the gate oxide on Ga 2O 3/GaN based MOS devices.« less

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

PubMed

Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

2015-01-01

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

NASA Astrophysics Data System (ADS)

Kovchavtsev, A. P.; Aksenov, M. S.; Tsarenko, A. V.; Nastovjak, A. E.; Pogosov, A. G.; Pokhabov, D. A.; Tereshchenko, O. E.; Valisheva, N. A.

2018-05-01

The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2-10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrödinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

High Quality of Liquid Phase-Deposited SiON on GaAs MOS Capacitor with Multiple Treatments

NASA Astrophysics Data System (ADS)

Lee, Ming-Kwei; Yen, Chih-Feng; Yeh, Min-Yen

2016-08-01

Silicon oxynitride (SiON) film on a p-type (100) GaAs substrate by liquid phase deposition has been characterized. Aqueous solutions of hydrofluosilicic acid, ammonia and boric acid were used as growth precursors. The electrical characteristics of SiON film are much improved on GaAs with (NH4)2S treatment. With post-metallization annealing (PMA), hydrogen ions further passivate traps in the SiON/GaAs film and interface. Both PMA and (NH4)2S treatments on a SiON/GaAs MOS capacitor produce better interface quality and lower interface state density (Dit) compared with ones without hydrogen and sulfur passivations. The leakage current densities are improved to 7.1 × 10-8 A/cm2 and 1.8 × 10-7 A/cm2 at ±2 V. The dielectric constant of 5.6 and the effective oxide charges of -5.3 × 1010 C/cm2 are obtained. The hysteresis offset of the hysteresis loop is only 0.09 V. The lowest Dit is 2.7 × 1011 cm-2/eV at an energy of about 0.66 eV from the edge of the valence band.

Computational investigation of structural and electronic properties of aqueous interfaces of GaN, ZnO, and a GaN/ZnO alloy.

PubMed

Kharche, Neerav; Hybertsen, Mark S; Muckerman, James T

2014-06-28

The GaN/ZnO alloy functions as a visible-light photocatalyst for splitting water into hydrogen and oxygen. As a first step toward understanding the mechanism and energetics of water-splitting reactions, we investigate the microscopic structure of the aqueous interfaces of the GaN/ZnO alloy and compare them with the aqueous interfaces of pure GaN and ZnO. Specifically, we have studied the (101̄0) surface of GaN and ZnO and the (101̄0) and (12̄10) surfaces of the 1 : 1 GaN/ZnO alloy. The calculations are carried out using first-principles density functional theory based molecular dynamics (DFT-MD). The structure of water within a 3 Å distance from the semiconductor surface is significantly altered by the acid/base chemistry of the aqueous interface. Water adsorption on all surfaces is substantially dissociative such that the surface anions (N or O) act as bases accepting protons from dissociated water molecules while the corresponding hydroxide ions bond with surface cations (Ga or Zn). Additionally, the hard-wall interface presented by the semiconductor imparts ripples in the density of water. Beyond a 3 Å distance from the semiconductor surface, water exhibits a bulk-like hydrogen bond network and oxygen-oxygen radial distribution function. Taken together, these characteristics represent the resting (or "dark") state of the catalytic interface. The electronic structure analysis of the aqueous GaN/ZnO interface suggests that the photogenerated holes may get trapped on interface species other than the adsorbed OH(-) ions. This suggests additional dynamical steps in the water oxidation process.

Effect of ultraviolet illumination on the charge trapping behaviour in SiN(x)/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapour deposition

NASA Astrophysics Data System (ADS)

Kim, C. H.; Han, I. K.; Lee, J. I.; Kang, K. N.; Kwon, S. D.; Choe, B.; Park, H. L.; Her, J.; Lim, H.

1994-04-01

In this work, we investigated the effect of ultraviolet illumination, which is known to generate silicon dangling bonds, on the charge trapping behaviors, utilizing the constant capacitance technique in SiN(x)/InP structure where conventional PE CVD was used to form the SiN films on InP. We found different behaviors of this structure with ultraviolet illumination compared to the case of SiN(x)/Si structure. Both the Si-rich condition during PE CVD and ultraviolet illumination seem to not only increase the number of traps but also broaden the energy level of the traps in the insulator near the SiN(x)/InP interface. In all cases (N-rich, Si-rich, with and without ultraviolet illumination) the amphoteric nature of the traps has been observed, which is a characteristic of Si-dangling bonds. Also, the effect of ultraviolet photons on the interface of SiN(x)/InP, especially in correlation with the deficiency of phosphorus at the interface, is discussed considering the existence of net negative fixed charges at the interface.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

NASA Astrophysics Data System (ADS)

Held, Martin; Schießl, Stefan P.; Miehler, Dominik; Gannott, Florentina; Zaumseil, Jana

2015-08-01

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfOx) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100-300 nF/cm2) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfOx dielectrics.

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

PubMed

Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

2017-12-27

Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

Molecular adsorption steers bacterial swimming at the air/water interface.

PubMed

Morse, Michael; Huang, Athena; Li, Guanglai; Maxey, Martin R; Tang, Jay X

2013-07-02

Microbes inhabiting Earth have adapted to diverse environments of water, air, soil, and often at the interfaces of multiple media. In this study, we focus on the behavior of Caulobacter crescentus, a singly flagellated bacterium, at the air/water interface. Forward swimming C. crescentus swarmer cells tend to get physically trapped at the surface when swimming in nutrient-rich growth medium but not in minimal salt motility medium. Trapped cells move in tight, clockwise circles when viewed from the air with slightly reduced speed. Trace amounts of Triton X100, a nonionic surfactant, release the trapped cells from these circular trajectories. We show, by tracing the motion of positively charged colloidal beads near the interface that organic molecules in the growth medium adsorb at the interface, creating a high viscosity film. Consequently, the air/water interface no longer acts as a free surface and forward swimming cells become hydrodynamically trapped. Added surfactants efficiently partition to the surface, replacing the viscous layer of molecules and reestablishing free surface behavior. These findings help explain recent similar studies on Escherichia coli, showing trajectories of variable handedness depending on media chemistry. The consistent behavior of these two distinct microbial species provides insights on how microbes have evolved to cope with challenging interfacial environments. Copyright © 2013 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Internal Photoemission at Interfaces of ALD TaSiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Y Chou, H.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-10-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Continuum modeling of charging process and piezoelectricity of ferroelectrets

NASA Astrophysics Data System (ADS)

Xu, Bai-Xiang; von Seggern, Heinz; Zhukov, Sergey; Gross, Dietmar

2013-09-01

Ferroelectrets in the form of electrically charged micro-porous foams exhibit a very large longitudinal piezoelectric coefficient d33. The structure has hence received wide application interests as sensors particularly in acoustic devices. During charging process, electrical breakdown (Paschen breakdown) takes place in the air pores of the foam and introduces free charge pairs. These charges are separated by electrostatic forces and relocated at the interfaces between the polymer and the electrically broken-down medium, where they are trapped quasistatically. The development of this trapped charge density along the interfaces is key for enabling the piezoelectricity of ferroelectrets. In this article, an internal variable based continuum model is proposed to calculate the charge density development at the interfaces, whereas a Maxwell stress based electromechanical model is used for the bulk behavior, i.e., of the polymer and of the medium where the Paschen breakdown takes place. In the modeling, the electrostatic forces between the separated charge pairs are included, as well as the influence of deformation of the solid layers. The material models are implemented in a nonlinear finite element scheme, which allows a detailed analysis of different geometries. A ferroelectret unit with porous expanded polytetrafluoroethylene (ePTFE) surrounded by fluorinated ethylene propylene is studied first. The simulated hysteresis curves of charge density at the surfaces and the calculated longitudinal piezoelectric constant are in good agreement with experimental results. Simulations show a strong dependency of the interface charge development and thus the remnant charges on the thicknesses of the layers and the permittivity of the materials. According to the calculated relation between d33 and the Young's modulus of ePTFE, the value of the Young's modulus of ePTFE is identified to be around 0.75 MPa, which lies well in the predicted range of 0.45 to 0.80 MPa, determined from the dielectric resonance spectra in the work of Zhang et al. [X. Q. Zhang et al., J. Appl. Phys. 108, 064113 (2010)]. To show the potential of the models, it is also applied to simulation of ferroelectrets with a lens shape. The results indicate that the electrical breakdown happens in a sequential manner, and the local piezoelectric coefficient varies with position. Thereby, the middle point on the surface exhibits the maximum d33. The simulation results obtained by the proposed models will provide insight for device optimization.

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

PubMed

Zhang, Liangliang; Guo, Yuzheng; Hassan, Vinayak Vishwanath; Tang, Kechao; Foad, Majeed A; Woicik, Joseph C; Pianetta, Piero; Robertson, John; McIntyre, Paul C

2016-07-27

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit.

Camera traps and activity signs to estimate wild boar density and derive abundance indices.

PubMed

Massei, Giovanna; Coats, Julia; Lambert, Mark Simon; Pietravalle, Stephane; Gill, Robin; Cowan, Dave

2018-04-01

Populations of wild boar and feral pigs are increasing worldwide, in parallel with their significant environmental and economic impact. Reliable methods of monitoring trends and estimating abundance are needed to measure the effects of interventions on population size. The main aims of this study, carried out in five English woodlands were: (i) to compare wild boar abundance indices obtained from camera trap surveys and from activity signs; and (ii) to assess the precision of density estimates in relation to different densities of camera traps. For each woodland, we calculated a passive activity index (PAI) based on camera trap surveys, rooting activity and wild boar trails on transects, and estimated absolute densities based on camera trap surveys. PAIs obtained using different methods showed similar patterns. We found significant between-year differences in abundance of wild boar using PAIs based on camera trap surveys and on trails on transects, but not on signs of rooting on transects. The density of wild boar from camera trap surveys varied between 0.7 and 7 animals/km 2 . Increasing the density of camera traps above nine per km 2 did not increase the precision of the estimate of wild boar density. PAIs based on number of wild boar trails and on camera trap data appear to be more sensitive to changes in population size than PAIs based on signs of rooting. For wild boar densities similar to those recorded in this study, nine camera traps per km 2 are sufficient to estimate the mean density of wild boar. © 2017 Crown copyright. Pest Management Science © 2017 Society of Chemical Industry. © 2017 Crown copyright. Pest Management Science © 2017 Society of Chemical Industry.

Impact of post metal annealing on gate work function engineering for advanced MOS applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, S. Sachin, E-mail: ssachikl995@yahoo.in; Prasad, Amitesh; Sinha, Amrita

2016-05-06

Ultra thin HfO{sub 2} high-k gate dielectric has been deposited directly on strained Si{sub 0.81}Ge{sub 0.19} by Atomic Layer Deposition (ALD) technique. The influence of different types of metal gate electrodes (Al, Au, Pt) on electrical characteristics of Metal-Oxide-Semiconductor capacitors has been studied. Our results show that the electrical characteristics of MOS device are highly dependent on the gate electrodes used. The dependency of electrical characteristics on post metal annealing was studied in detail. The measured flat band (V{sub fb}) and hysteresis (ΔV{sub fb}) from high frequency C-V characteristics were used to study the pre-existing traps in the dielectric. Impactmore » of PMA on interface state density (D{sub it}), border trap density (N{sub bt}) and oxide trap density (Q{sub f/q}) of high-k gate stack were also examined for all the devices. The N{sub bt} and frequency dispersion significantly reduces to ~2.77x1010 cm{sup −2} and ~11.34 % respectively in case of Al electrode with a Dit value of ~4x10{sup 12} eV{sup −1}cm{sup −2} after PMA (350°C) in N{sub 2}, suggesting an improvement in device performance while Pt electrode shows a much less value of ΔVfb (~0.02 V) and Dit (~3.44x10{sup 12} eV{sup −1}cm{sup −2}) after PMA.« less

Amine treatment induced perovskite nanowire network in perovskite solar cells: efficient surface passivation and carrier transport

NASA Astrophysics Data System (ADS)

Xiao, Ke; Cui, Can; Wang, Peng; Lin, Ping; Qiang, Yaping; Xu, Lingbo; Xie, Jiangsheng; Yang, Zhengrui; Zhu, Xiaodong; Yu, Xuegong; Yang, Deren

2018-02-01

In the fabrication of high efficiency organic-inorganic metal halide perovskite solar cells (PSCs), an additional interface modifier is usually applied for enhancing the interface passivation and carrier transport. In this paper, we develop an innovative method with in-situ growth of one-dimensional perovskite nanowire (1D PNW) network triggered by Lewis amine over the perovskite films. To our knowledge, this is the first time to fabricate PSCs with shape-controlled perovskite surface morphology, which improved power conversion efficiency (PCE) from 14.32% to 16.66% with negligible hysteresis. The amine molecule can passivate the trap states on the polycrystalline perovskite surface to reduce trap-state density. Meanwhile, as a fast channel, the 1D PNWs would promote carrier transport from the bulk perovskite film to the electron transport layer. The PSCs with 1D PNW modification not only exhibit excellent photovoltaic performances, but also show good stability with only 4% PCE loss within 30 days in the ambient air without encapsulation. Our results strongly suggest that in-situ grown 1D PNW network provides a feasible and effective strategy for nanostructured optoelectronic devices such as PSCs to achieve superior performances.

Uncovering the density of nanowire surface trap states hidden in the transient photoconductance.

PubMed

Xu, Qiang; Dan, Yaping

2016-09-21

The gain of nanoscale photoconductors is closely correlated with surface trap states. Mapping out the density of surface trap states in the semiconductor bandgap is crucial for engineering the performance of nanoscale photoconductors. Traditional capacitive techniques for the measurement of surface trap states are not readily applicable to nanoscale devices. Here, we demonstrate a simple technique to extract the information on the density of surface trap states hidden in the transient photoconductance that is widely observed. With this method, we found that the density of surface trap states of a single silicon nanowire is ∼10(12) cm(-2) eV(-1) around the middle of the upper half bandgap.

Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

NASA Astrophysics Data System (ADS)

Driad, R.; Sah, R. E.; Schmidt, R.; Kirste, L.

2012-01-01

We present structural, stress, and electrical properties of plasma assisted e-beam evaporated hafnium dioxide (HfO2) layers on n-type InP substrates. These layers have subsequently been used for surface passivation of InGaAs/InP heterostructure bipolar transistors either alone or in combination with plasma enhanced chemical vapor deposited SiO2 layers. The use of stacked HfO2/SiO2 results in better interface quality with InGaAs/InP heterostructures, as illustrated by smaller leakage current and improved breakdown voltage. These improvements can be attributed to the reduced defect density and charge trapping at the dielectric-semiconductor interface. The deposition at room temperature makes these films suitable for sensitive devices.

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors

NASA Astrophysics Data System (ADS)

Lu, Han-Han; Xu, Jing-Ping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man

2016-11-01

An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112), the University Development Fund of the University of Hong Kong, China (Grant No. 00600009), and the Hong Kong Polytechnic University, China (Grant No. 1-ZVB1).

Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors

NASA Astrophysics Data System (ADS)

Vu, Quoc An; Fan, Sidi; Hyup Lee, Sang; Joo, Min-Kyu; Jong Yu, Woo; Lee, Young Hee

2018-07-01

While two-dimensional (2D) van der Waals (vdW) layered materials are promising channel materials for wearable electronics and energy-efficient field-effect transistors (FETs), large hysteresis and large subthreshold swing induced by either dangling bonds at gate oxide dielectrics and/or trap molecules in bubbles at vdW interface are a serious drawback, hampering implementation of the 2D-material based FETs in real electronics. Here, we report a monolayer MoS2 FET with near-zero hysteresis reaching 0.15% of the sweeping range of the gate bias, a record-value observed so far in 2D FETs. This was realized by squeezing the MoS2 channel between top h-BN layer and bottom h-BN gate dielectrics and further removing the trap molecules in bubbles at the vdW interfaces via post-annealing. By segregating the bubbles out to the edge of the channel, we also obtain excellent switching characteristics with a minimum subthreshold swing of 63 mV/dec, an average subthreshold slope of 69 mV/dec for a current range of four orders of magnitude at room temperature, and a high on/off current ratio of 108 at a small operating voltage (<1 V). Such a near-zero hysteresis and a near-ideal subthreshold limit originate from the reduced trap density of ~5.2  ×  109 cm‑2 eV‑1, a thousand times smaller than previously reported values.

Electron Trap Energy Distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3 Layers on Silicon

NASA Astrophysics Data System (ADS)

Wang, W. C.; Badylevich, M.; Adelmann, C.; Swerts, J.; Kittl, J. A.; Afanas'ev, V. V.

2012-12-01

The energy distribution of electron trap density in atomic layer deposited Al2O3, LaAl4Ox and GdyAl2-yO3 insulating layers was studied by using the exhaustive photodepopulation spectroscopy. Upon filling the traps by electron tunneling from Si substrate, a broad energy distribution of trap levels in the energy range 2-4 eV is found in all studied insulators with trap densities in the range of 1012 cm-2eV-1. The incorporation of La and Gd cations reduces the trap density in aluminate layers as compared to Al2O3. Crystallization of the insulator by the post-deposition annealing is found to increase the trap density while the energy distribution remains unchanged. The similar trap spectra in the Al2O3 and La or Gd aluminate layers suggest the common nature of the traps, probably originating from imperfections in the AlOx sub-network.

Disorder trapping by rapidly moving phase interface in an undercooled liquid

NASA Astrophysics Data System (ADS)

Galenko, Peter; Danilov, Denis; Nizovtseva, Irina; Reuther, Klemens; Rettenmayr, Markus

2017-08-01

Non-equilibrium phenomena such as the disappearance of solute drag, the origin of solute trapping and evolution of disorder trapping occur during fast transformations with originating metastable phases [D.M. Herlach, P.K. Galenko, D. Holland-Moritz, Metastable solids from undrercooled melts (Elsevier, Amsterdam, 2007)]. In the present work, a theoretical investigation of disorder trapping by a rapidly moving phase interface is presented. Using a model of fast phase transformations, a system of governing equations for the diffusion of atoms, and the evolution of both long-range order parameter and phase field variable is formulated. First numerical solutions are carried out for a congruently melting binary alloy system.

Characterization of charge trapping phenomena at III-N/dielectric interfaces

NASA Astrophysics Data System (ADS)

Stradiotto, Roberta; Pobegen, Gregor; Ostermaier, Clemens; Grasser, Tibor

2016-11-01

Charge trapping related phenomena are among the most serious reliability issues in GaN/AlGaN MIS-HEMTs technology. Today, many research efforts are undertaken to investigate and identify the defects responsible for device degradation. This work focuses on the trap sites located close to the interface with the dielectric, which are responsible for large voltage drifts in on-state conditions. We study the response of GaN/AlGaN/SiN systems to small and large signal excitation. Measurements performed with a lock-in amplifier enable us to deeply understand the dynamic behavior because of the improved time resolution and the versatility of the instrument. We investigate the frequency dispersion and the hysteresis of these devices and conclude that direct analysis of impedance characteristics is not sufficient to extract information about the interface trap response. We propose a methodology to study trapping phenomena based on transient measurement analysis, describing the approximations made and their effect on the accuracy of the result. Results on MIS test structures confirm the existence of a broad distribution of trap states. Capture time constants are found to be uniformly distributed in the experimental time window between 50 μs and 100 s.

Positron annihilation studies of the AlOx/SiO2/Si interface in solar cell structures

NASA Astrophysics Data System (ADS)

Edwardson, C. J.; Coleman, P. G.; Li, T.-T. A.; Cuevas, A.; Ruffell, S.

2012-03-01

Film and film/substrate interface characteristics of 30 and 60 nm-thick AlOx films grown on Si substrates by thermal atomic layer deposition (ALD), and 30 nm-thick AlOx films by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlOx/SiOx/Si interface with positron trapping and annihilation occurring in the Si side of the SiOx/Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 ± 2%) before annealing which is increased to 47 ± 2% after annealing. Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiOx interface in the as-deposited sample, and the positron response to it increases after annealing as an SiO2 layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.

Estimation of density of mongooses with capture-recapture and distance sampling

USGS Publications Warehouse

Corn, J.L.; Conroy, M.J.

1998-01-01

We captured mongooses (Herpestes javanicus) in live traps arranged in trapping webs in Antigua, West Indies, and used capture-recapture and distance sampling to estimate density. Distance estimation and program DISTANCE were used to provide estimates of density from the trapping-web data. Mean density based on trapping webs was 9.5 mongooses/ha (range, 5.9-10.2/ha); estimates had coefficients of variation ranging from 29.82-31.58% (X?? = 30.46%). Mark-recapture models were used to estimate abundance, which was converted to density using estimates of effective trap area. Tests of model assumptions provided by CAPTURE indicated pronounced heterogeneity in capture probabilities and some indication of behavioral response and variation over time. Mean estimated density was 1.80 mongooses/ha (range, 1.37-2.15/ha) with estimated coefficients of variation of 4.68-11.92% (X?? = 7.46%). Estimates of density based on mark-recapture data depended heavily on assumptions about animal home ranges; variances of densities also may be underestimated, leading to unrealistically narrow confidence intervals. Estimates based on trap webs require fewer assumptions, and estimated variances may be a more realistic representation of sampling variation. Because trap webs are established easily and provide adequate data for estimation in a few sample occasions, the method should be efficient and reliable for estimating densities of mongooses.

The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Taeho; Hur, Jihyun; Jeon, Sanghun

2016-05-01

Defects in oxide semiconductors not only influence the initial device performance but also affect device reliability. The front channel is the major carrier transport region during the transistor turn-on stage, therefore an understanding of defects located in the vicinity of the interface is very important. In this study, we investigated the dynamics of charge transport in a nanocrystalline hafnium-indium-zinc-oxide thin-film transistor (TFT) by short pulse I-V, transient current and 1/f noise measurement methods. We found that the fast charging behavior of the tested device stems from defects located in both the front channel and the interface, following a multi-trapping mechanism. We found that a silicon-nitride stacked hafnium-indium-zinc-oxide TFT is vulnerable to interfacial charge trapping compared with silicon-oxide counterpart, causing significant mobility degradation and threshold voltage instability. The 1/f noise measurement data indicate that the carrier transport in a silicon-nitride stacked TFT device is governed by trapping/de-trapping processes via defects in the interface, while the silicon-oxide device follows the mobility fluctuation model.

On the origin of the driving force in the Marangoni propelled gas bubble trapping mechanism.

PubMed

Miniewicz, A; Quintard, C; Orlikowska, H; Bartkiewicz, S

2017-07-19

Gas bubbles can be trapped and then manipulated with laser light. In this report, we propose the detailed optical trapping mechanism of gas bubbles confined inside a thin light-absorbing liquid layer between two glass plates. The necessary condition of bubble trapping in this case is the direct absorption of light by the solution containing a dye. Due to heat release, fluid whirls propelled by the surface Marangoni effect at the liquid/gas interface emerge and extend to large distances. We report the experimental microscopic observation of the origin of whirls at an initially flat liquid/air interface as well as at the curved interface of a liquid/gas bubble and support this finding with advanced numerical simulations using the finite element method within the COMSOL Multiphysics platform. The simulation results were in good agreement with the observations, which allowed us to propose a simple physical model for this particular trapping mechanism, to establish the origin of forces attracting bubbles toward a laser beam and to predict other phenomena related to this effect.

IGDS/TRAP Interface Program (ITIP). Software Design Document

NASA Technical Reports Server (NTRS)

Jefferys, Steve; Johnson, Wendell

1981-01-01

The preliminary design of the IGDS/TRAP Interface Program (ITIP) is described. The ITIP is implemented on the PDP 11/70 and interfaces directly with the Interactive Graphics Design System and the Data Management and Retrieval System. The program provides an efficient method for developing a network flow diagram. Performance requirements, operational rquirements, and design requirements are discussed along with sources and types of input and destination and types of output. Information processing functions and data base requirements are also covered.

A spatially explicit capture-recapture estimator for single-catch traps.

PubMed

Distiller, Greg; Borchers, David L

2015-11-01

Single-catch traps are frequently used in live-trapping studies of small mammals. Thus far, a likelihood for single-catch traps has proven elusive and usually the likelihood for multicatch traps is used for spatially explicit capture-recapture (SECR) analyses of such data. Previous work found the multicatch likelihood to provide a robust estimator of average density. We build on a recently developed continuous-time model for SECR to derive a likelihood for single-catch traps. We use this to develop an estimator based on observed capture times and compare its performance by simulation to that of the multicatch estimator for various scenarios with nonconstant density surfaces. While the multicatch estimator is found to be a surprisingly robust estimator of average density, its performance deteriorates with high trap saturation and increasing density gradients. Moreover, it is found to be a poor estimator of the height of the detection function. By contrast, the single-catch estimators of density, distribution, and detection function parameters are found to be unbiased or nearly unbiased in all scenarios considered. This gain comes at the cost of higher variance. If there is no interest in interpreting the detection function parameters themselves, and if density is expected to be fairly constant over the survey region, then the multicatch estimator performs well with single-catch traps. However if accurate estimation of the detection function is of interest, or if density is expected to vary substantially in space, then there is merit in using the single-catch estimator when trap saturation is above about 60%. The estimator's performance is improved if care is taken to place traps so as to span the range of variables that affect animal distribution. As a single-catch likelihood with unknown capture times remains intractable for now, researchers using single-catch traps should aim to incorporate timing devices with their traps.

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Aoki, T.; Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

2014-07-01

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al2O3. This AlN passivation incorporated nitrogen at the Al2O3/GaAs interface, improving the capacitance-voltage (C-V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C-V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (Dit). The Dit was reduced over the entire GaAs band gap. In particular, these devices exhibited Dit around the midgap of less than 4 × 1012 cm-2eV-1, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

Optimising the application of multiple-capture traps for invasive species management using spatial simulation.

PubMed

Warburton, Bruce; Gormley, Andrew M

2015-01-01

Internationally, invasive vertebrate species pose a significant threat to biodiversity, agricultural production and human health. To manage these species a wide range of tools, including traps, are used. In New Zealand, brushtail possums (Trichosurus vulpecula), stoats (Mustela ermine), and ship rats (Rattus rattus) are invasive and there is an ongoing demand for cost-effective non-toxic methods for controlling these pests. Recently, traps with multiple-capture capability have been developed which, because they do not require regular operator-checking, are purported to be more cost-effective than traditional single-capture traps. However, when pest populations are being maintained at low densities (as is typical of orchestrated pest management programmes) it remains uncertain if it is more cost-effective to use fewer multiple-capture traps or more single-capture traps. To address this uncertainty, we used an individual-based spatially explicit modelling approach to determine the likely maximum animal-captures per trap, given stated pest densities and defined times traps are left between checks. In the simulation, single- or multiple-capture traps were spaced according to best practice pest-control guidelines. For possums with maintenance densities set at the lowest level (i.e. 0.5/ha), 98% of all simulated possums were captured with only a single capacity trap set at each site. When possum density was increased to moderate levels of 3/ha, having a capacity of three captures per trap caught 97% of all simulated possums. Results were similar for stoats, although only two potential captures per site were sufficient to capture 99% of simulated stoats. For rats, which were simulated at their typically higher densities, even a six-capture capacity per trap site only resulted in 80% kill. Depending on target species, prevailing density and extent of immigration, the most cost-effective strategy for pest control in New Zealand might be to deploy several single-capture traps rather than investing in fewer, but more expense, multiple-capture traps.

A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

2018-04-01

In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes.

PubMed

Bessire, Cedric D; Björk, Mikael T; Schmid, Heinz; Schenk, Andreas; Reuter, Kathleen B; Riel, Heike

2011-10-12

We report on the electrical characterization of one-sided p(+)-si/n-InAs nanowire heterojunction tunnel diodes to provide insight into the tunnel process occurring in this highly lattice mismatched material system. The lattice mismatch gives rise to dislocations at the interface as confirmed by electron microscopy. Despite this, a negative differential resistance with peak-to-valley current ratios of up to 2.4 at room temperature and with large current densities is observed, attesting to the very abrupt and high-quality interface. The presence of dislocations and other defects that increase the excess current is evident in the first and second derivative of the I-V characteristics as distinct peaks arising from trap-and phonon-assisted tunneling via the corresponding defect levels. We observe this assisted tunneling mainly in the forward direction and at low reverse bias but not at higher reverse biases because the band-to-band generation rates are peaked in the InAs, which is also confirmed by modeling. This indicates that most of the peaks are due to dislocations and defects in the immediate vicinity of the interface. Finally, we also demonstrate that these devices are very sensitive to electrical stress, in particular at room temperature, because of the extremely high electrical fields obtained at the abrupt junction even at low bias. The electrical stress induces additional defect levels in the band gap, which reduce the peak-to-valley current ratios.

Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

NASA Astrophysics Data System (ADS)

Suvorova, N. A.; Lopez, C. M.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

2004-03-01

(Ba,Sr)TiO3(BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO2 on Si or 3.5 nm SiO2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density Dit of an order of magnitude for oxidized Si substrates with a thicker SiO2 underlayer. Further reduction of Dit was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization.

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

NASA Astrophysics Data System (ADS)

Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

2017-12-01

The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

Au-embedded ZnO/NiO hybrid with excellent electrochemical performance as advanced electrode materials for supercapacitor.

PubMed

Zheng, Xin; Yan, Xiaoqin; Sun, Yihui; Bai, Zhiming; Zhang, Guangjie; Shen, Yanwei; Liang, Qijie; Zhang, Yue

2015-02-04

Here we design a nanostructure by embedding Au nanoparticles into ZnO/NiO core-shell composites as supercapacitors electrodes materials. This optimized hybrid electrodes exhibited an excellent electrochemical performance including a long-term cycling stability and a maximum specific areal capacitance of 4.1 F/cm(2) at a current density of 5 mA/cm(2), which is much higher than that of ZnO/NiO hierarchical materials (0.5 F/cm(2)). Such an enhanced property is attributed to the increased electro-electrolyte interfaces, short electron diffusion pathways and good electrical conductivity. Apart from this, electrons can be temporarily trapped and accumulated at the Fermi level (EF') because of the localized schottky barrier at Au/NiO interface in charge process until fill the gap between ZnO and NiO, so that additional electrons can be released during discharge. These results demonstrate that suitable interface engineering may open up new opportunities in the development of high-performance supercapacitors.

Observing Imperfection in Atomic Interfaces for van der Waals Heterostructures.

PubMed

Rooney, Aidan P; Kozikov, Aleksey; Rudenko, Alexander N; Prestat, Eric; Hamer, Matthew J; Withers, Freddie; Cao, Yang; Novoselov, Kostya S; Katsnelson, Mikhail I; Gorbachev, Roman; Haigh, Sarah J

2017-09-13

Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross-sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS 2 or WS 2 for stacks prepared by mechanical exfoliation in air. However, for two technologically important transition metal dichalcogenide (TMDC) systems, MoSe 2 and WSe 2 , our measurement of interlayer separations provide the first evidence for impurity species being trapped at buried interfaces with hBN interfaces that are flat at the nanometer length scale. While decreasing the thickness of encapsulated WSe 2 from bulk to monolayer we see a systematic increase in the interlayer separation. We attribute these differences to the thinnest TMDC flakes being flexible and hence able to deform mechanically around a sparse population of protruding interfacial impurities. We show that the air sensitive two-dimensional (2D) crystal NbSe 2 can be fabricated into heterostructures with pristine interfaces by processing in an inert-gas environment. Finally we find that adopting glovebox transfer significantly improves the quality of interfaces for WSe 2 compared to processing in air.

Heating rates in collisionally opaque alkali-metal atom traps: Role of secondary collisions

NASA Astrophysics Data System (ADS)

Beijerinck, H. C. W.

2000-12-01

Grazing collisions with background gas are the major cause of trap loss and trap heating in atom traps. To first order, these effects do not depend on the trap density. In collisionally opaque trapped atom clouds, however, scattered atoms with an energy E larger than the effective trap depth Eeff, which are destined to escape from the atom cloud, will have a finite probability for a secondary collision. This results in a contribution to the heating rate that depends on the column density of the trapped atoms, i.e., the product of density and characteristic size of the trap. For alkali-metal atom traps, secondary collisions are quite important due to the strong long-range interaction with like atoms. We derive a simple analytical expression for the secondary heating rate, showing a dependency proportional to E1/2eff. When extrapolating to a vanishing column density, only primary collisions with the background gas will contribute to the heating rate. This contribution is rather small, due to the weak long-range interaction of the usual background gas species in an ultrahigh-vacuum system-He, Ne, or Ar-with the trapped alkali-metal atoms. We conclude that the transition between trap-loss collisions and heating collisions is determined by a cutoff energy 200 μK<=Eeff<=400 μK, much smaller than the actual trap depth E in most magnetic traps. Atoms with an energy Eeff

Design and Fabrication of Cryostat Interface and Electronics for High Performance Antimatter Trap (HI-PAT)

NASA Technical Reports Server (NTRS)

Smith, Gerald A.

1999-01-01

Included in Appendix I to this report is a complete set of design and assembly schematics for the high vacuum inner trap assembly, cryostat interfaces and electronic components for the MSFC HI-PAT. Also included in the final report are summaries of vacuum tests, and electronic tests performed upon completion of the assembly.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states atmore » the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.« less

Interfacial characteristics and leakage current transfer mechanisms in organometal trihalide perovskite gate-controlled devices via doping of PCBM

NASA Astrophysics Data System (ADS)

Wang, Yucheng; Zhang, Yuming; Liu, Yintao; Pang, Tiqiang; Hu, Ziyang; Zhu, Yuejin; Luan, Suzhen; Jia, Renxu

2017-11-01

Two types of perovskite (with and without doping of PCBM) based metal-oxide-semiconductor (MOS) gate-controlled devices were fabricated and characterized. The study of the interfacial characteristics and charge transfer mechanisms by doping of PCBM were analyzed by material and electrical measurements. Doping of PCBM does not affect the size and crystallinity of perovskite films, but has an impact on carrier extraction in perovskite MOS devices. The electrical hysteresis observed in capacitance-voltage and current-voltage measurements can be alleviated by doping of PCBM. Experimental results demonstrate that extremely low trap densities are found for the perovskite device without doping, while the doped sample leads to higher density of interface state. Three mechanisms including Ohm’s law, trap-filled-limit (TFL) emission, and child’s law were used to analyze possible charge transfer mechanisms. Ohm’s law mechanism is well suitable for charge transfer of both the perovskite MOS devices under light condition at large voltage, while TFL emission well addresses the behavior of charge transfer under dark at small voltage. This change of charge transfer mechanism is attributed to the impact of the ion drift within perovskites.

Internal Photoemission at Interaces of ALD TaiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Chou, H. Y.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-12-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

DOE PAGES

Laroche, Dominique; Huang, S. -H.; Nielsen, Erik; ...

2015-10-07

We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ~ 100 nm to ~ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ n α, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ~ 2.3. At the highest achievable densities in the quantummore » wells buried at intermediate depth, an exponent α ~ 5 is observed. Lastly, we propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.« less

Direct measurement of density of states in pentacene thin film transistors

NASA Astrophysics Data System (ADS)

Yogev, S.; Halpern, E.; Matsubara, R.; Nakamura, M.; Rosenwaks, Y.

2011-10-01

We report on direct high lateral resolution measurements of density of states in pentacene thin film transistors using Kelvin probe force microscopy. The measurements were conducted on passivated (hexamethyldisilazane) and unpassivated field effect transistors with 10- and 30-nm-thick pentacene polycrystalline layers. The analysis takes into account both the band bending in the organic film and the trapped charge at the SiO2-pentacene interface. We found that the density of states for the highest occupied molecular orbital band of pentacene film on the treated substrate is Gaussian with a width (variance) of σ=0.07±0.01eV and an exponential tail. The concentration of the density of states in the gap for pentacene on bare SiO2 substrate was larger by one order of magnitude, had a different energy distribution, and induced Fermi level pinning. The results are discussed in view of their effect on pentacene thin film transistors’ performance.

Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena

This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{supmore » 11} cm{sup −2}).« less

Comparative study of solute trapping and Gibbs free energy changes at the phase interface during alloy solidification under local nonequilibrium conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobolev, S. L., E-mail: sobolev@icp.ac.ru

An analytical model has been developed to describe the influence of solute trapping during rapid alloy solidification on the components of the Gibbs free energy change at the phase interface with emphasis on the solute drag energy. For relatively low interface velocity V < V{sub D}, where V{sub D} is the characteristic diffusion velocity, all the components, namely mixing part, local nonequilibrium part, and solute drag, significantly depend on solute diffusion and partitioning. When V ≥ V{sub D}, the local nonequilibrium effects lead to a sharp transition to diffusionless solidification. The transition is accompanied by complete solute trapping and vanishingmore » solute drag energy, i.e. partitionless and “dragless” solidification.« less

Microscopic origin of low frequency noise in MoS{sub 2} field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghatak, Subhamoy; Jain, Manish; Ghosh, Arindam

2014-09-01

We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS{sub 2}) field-effect transistors in multiple device configurations including MoS{sub 2} on silicon dioxide as well as MoS{sub 2}-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO{sub 2} interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS{sub 2} contacts also play a significant role inmore » determining noise magnitude in these devices.« less

Mesoscopic coherence in light scattering from cold, optically dense and disordered atomic systems

NASA Astrophysics Data System (ADS)

Kupriyanov, D. V.; Sokolov, I. M.; Havey, M. D.

2017-02-01

Coherent effects manifested in light scattering from cold, optically dense and disordered atomic systems are reviewed from a primarily theoretical point of view. Development of the basic theoretical tools is then elaborated through several physical atomic physics based processes which have been at least partly explored experimentally. These include illustrations drawn from the coherent backscattering effect, random lasing in atomic gases, quantum memories and light-atoms interface assisted by the light trapping mechanism. Current understanding and challenges associated with the transition to high atomic densities and cooperativity in the scattering process are also discussed in some detail.

Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Colon, Albert; Stan, Liliana; Divan, Ralu

Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approachmore » this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO2 and Al2O3 using different ratios of ALD cycles. TiO2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO2. The gate leakage current density decreases with increasing Al content, being similar to 2-3 orders of magnitude lower for a TiO2:Al2O3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO2 and decreases with increasing the number of Al2O3 cycles, it is maintaining a relatively high value compared to an Al2O3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-kappa properties of TiO2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both AlGaN/GaN and InAlN/GaN based devices.« less

Influence of energy band alignment in mixed crystalline TiO2 nanotube arrays: good for photocatalysis, bad for electron transfer

NASA Astrophysics Data System (ADS)

Mohammadpour, Raheleh

2017-12-01

Despite the wide application ranges of TiO2, the precise explanation of the charge transport dynamic through a mixed crystal phase of this semiconductor has remained elusive. Here, in this research, mixed-phase TiO2 nanotube arrays (TNTAs) consisting of anatase and 0-15% rutile phases has been formed through various annealing processes and employed as a photoelectrode of a photovoltaic cell. Wide ranges of optoelectronic experiments have been employed to explore the band alignment position, as well as the depth and density of trap states in TNTAs. Short circuit potential, as well as open circuit potential measurements specified that the band alignment of more than 0.2 eV exists between the anatase and rutile phase Fermi levels, with a higher electron affinity for anatase; this can result in a potential barrier in crystallite interfaces and the deterioration of electron mobility through mixed phase structures. Moreover, a higher density of shallow localized trap states below the conduction band with more depth (133 meV in anatase to 247 meV in 15% rutile phase) and also deep oxygen vacancy traps have been explored upon introducing the rutile phase. Based on our results, employing TiO2 nanotubes as just the electron transport medium in mixed crystalline phases can deteriorate the charge transport mechanism, however, in photocatalytic applications when both electrons and holes are present, a robust charge separation in crystalline anatase/rutile interphases will result in better performances.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Jeong

The research program reported here is focused on critical issues that represent conspicuous gaps in current understanding of rapid solidification, limiting our ability to predict and control microstructural evolution (i.e. morphological dynamics and microsegregation) at high undercooling, where conditions depart significantly from local equilibrium. More specifically, through careful application of phase-field modeling, using appropriate thin-interface and anti-trapping corrections and addressing important details such as transient effects and a velocity-dependent (i.e. adaptive) numerics, the current analysis provides a reasonable simulation-based picture of non-equilibrium solute partitioning and the corresponding oscillatory dynamics associated with single-phase rapid solidification and show that this method ismore » a suitable means for a self-consistent simulation of transient behavior and operating point selection under rapid growth conditions. Moving beyond the limitations of conventional theoretical/analytical treatments of non-equilibrium solute partitioning, these results serve to substantiate recent experimental findings and analytical treatments for single-phase rapid solidification. The departure from the equilibrium solid concentration at the solid-liquid interface was often observed during rapid solidification, and the energetic associated non-equilibrium solute partitioning has been treated in detail, providing possible ranges of interface concentrations for a given growth condition. Use of these treatments for analytical description of specific single-phase dendritic and cellular operating point selection, however, requires a model for solute partitioning under a given set of growth conditions. Therefore, analytical solute trapping models which describe the chemical partitioning as a function of steady state interface velocities have been developed and widely utilized in most of the theoretical investigations of rapid solidification. However, these solute trapping models are not rigorously verified due to the difficulty in experimentally measuring under rapid growth conditions. Moreover, since these solute trapping models include kinetic parameters which are difficult to directly measure from experiments, application of the solute trapping models or the associated analytic rapid solidification model is limited. These theoretical models for steady state rapid solidification which incorporate the solute trapping models do not describe the interdependency of solute diffusion, interface kinetics, and alloy thermodynamics. The phase-field approach allows calculating, spontaneously, the non-equilibrium growth effects of alloys and the associated time-dependent growth dynamics, without making the assumptions that solute partitioning is an explicit function of velocity, as is the current convention. In the research described here, by utilizing the phase-field model in the thin-interface limit, incorporating the anti-trapping current term, more quantitatively valid interface kinetics and solute diffusion across the interface are calculated. In order to sufficiently resolve the physical length scales (i.e. interface thickness and diffusion boundary length), grid spacings are continually adjusted in calculations. The full trajectories of transient planar growth dynamics under rapid directional solidification conditions with different pulling velocities are described. As a validation of a model, the predicted steady state conditions are consistent with the analytic approach for rapid growth. It was confirmed that rapid interface dynamics exhibits the abrupt acceleration of the planar front when the effect of the non-equilibrium solute partitioning at the interface becomes signi ficant. This is consistent with the previous linear stability analysis for the non-equilibrium interface dynamics. With an appropriate growth condition, the continuous oscillation dynamics was able to be simulated using continually adjusting grid spacings. This oscillatory dynamics including instantaneous jump of interface velocities are consistent with a previous phenomenological model by and a numerical investigation, which may cause the formation of banded structures. Additionally, the selection of the steady state growth dynamics in the highly undercooled melt is demonstrated. The transition of the growth morphology, interface velocity selection, and solute trapping phenomenon with increasing melt supersaturations was described by the phase-field simulation. The tip selection for the dendritic growth was consistent with Ivantsov's function, and the non-equilibrium chemical partitioning behavior shows good qualitative agreement with the Aziz's solute trapping model even though the model parameter(V D) remains as an arbitrary constant. This work is able to show the possibility of comprehensive description of rapid alloy growth over the entire time-dependent non-equilibrium phenomenon.« less

Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation

NASA Astrophysics Data System (ADS)

Bai, Zhiyuan; Du, Jiangfeng; Liu, Yong; Xin, Qi; Liu, Yang; Yu, Qi

2017-07-01

In this paper, we report a new phenomenon in C-V measurement of different gate length MIS-HEMTs, which can be associated with traps character of the AlGaN/GaN interface. The analysis of DC measurement, frequency dependent capacitance-voltage measurements and simulation show that the stress from passivation layer may induce a decrease of drain output current Ids, an increase of on-resistance, serious nonlinearity of transconductance gm, and a new peak of C-V curve. The value of the peak is reduced to zero while the gate length and measure frequency are increasing to 21 μm and 1 MHz, respectively. By using conductance method, the SiNx/GaN interface traps with energy level of EC-0.42 eV to EC-0.45 eV and density of 3.2 × 1012 ∼ 5.0 × 1012 eV-1 cm-2 is obtained after passivation. According to the experimental and simulation results, formation of the acceptor-like traps with concentration of 3 × 1011 cm-2 and energy level of EC-0.37 eV under the gate on AlGaN barrier side of AlGaN/GaN interface is the main reason for the degradation after the passivation. He is currently an Associate Professor with State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, UESTC. He is the author of over 30 peer-reviewed journal papers and more than 20 conference papers. He has also hold over 20 patents. His research interests include Gallium Nitride based high-voltage power switching devices, microwave and millimeter-wave power devices and integrated technologies. Dr. Yu was a recipient of the prestigious Award of Science and Technology of China

Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

NASA Astrophysics Data System (ADS)

Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin

2017-02-01

This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm2/V·s) compared with the ITZO-only TFTs (∼34 cm2/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and -2.39 V compared with 6.10 and -6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of EA were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO2 reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

Improved Radio-Frequency Magneto-Optical Trap of SrF Molecules.

PubMed

Steinecker, Matthew H; McCarron, Daniel J; Zhu, Yuqi; DeMille, David

2016-11-18

We report the production of ultracold, trapped strontium monofluoride (SrF) molecules with number density and phase-space density significantly higher than previously achieved. These improvements are enabled by three distinct changes to our recently-demonstrated scheme for radio-frequency magneto-optical trapping of SrF: modification of the slowing laser beam geometry, addition of an optical pumping laser, and incorporation of a compression stage to the magneto-optical trap. With these improvements, we observe a trapped sample of SrF molecules at density 2.5×10 5  cm -3 and phase-space density 6×10 -14 , each a factor of 4 greater than in previous work. Under different experimental conditions, we observe trapping of up to 10 4 molecules, a factor of 5 greater than in previous work. Finally, by reducing the intensity of the applied trapping light, we observe molecular temperatures as low as 250 μK. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

DOE PAGES

Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo; ...

2017-02-27

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based onmore » C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm 2 V –1 s –1 and a maximal mobility of 2.9 cm 2 V –1 s –1 with on/off ratios of 10 7. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C 60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.« less

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based onmore » C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm 2 V –1 s –1 and a maximal mobility of 2.9 cm 2 V –1 s –1 with on/off ratios of 10 7. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C 60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.« less

DLTS analysis of amphoteric interface defects in high-TiO{sub 2} MOS structures prepared by sol-gel spin-coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara, E-mail: ksrkrao@physics.iisc.ernet.in, E-mail: raoksrk@gmail.com

2015-11-15

High-κ TiO{sub 2} thin films have been fabricated from a facile, combined sol – gel spin – coating technique on p and n type silicon substrate. XRD and Raman studies headed the existence of anatase phase of TiO{sub 2} with a small grain size of 18 nm. The refractive index ‘n’ quantified from ellipsometry is 2.41. AFM studies suggest a high quality, pore free films with a fairly small surface roughness of 6 Å. The presence of Ti in its tetravalent state is confirmed by XPS analysis. The defect parameters observed at the interface of Si/TiO{sub 2} were studied bymore » capacitance – voltage (C – V) and deep level transient spectroscopy (DLTS). The flat – band voltage (V{sub FB}) and the density of slow interface states estimated are – 0.9, – 0.44 V and 5.24×10{sup 10}, 1.03×10{sup 11} cm{sup −2}; for the NMOS and PMOS capacitors, respectively. The activation energies, interface state densities and capture cross – sections measured by DLTS are E{sub V} + 0.30, E{sub C} – 0.21 eV; 8.73×10{sup 11}, 6.41×10{sup 11} eV{sup −1} cm{sup −2} and 5.8×10{sup −23}, 8.11×10{sup −23} cm{sup 2} for the NMOS and PMOS structures, respectively. A low value of interface state density in both P- and N-MOS structures makes it a suitable alternate dielectric layer for CMOS applications. And also very low value of capture cross section for both the carriers due to the amphoteric nature of defect indicates that the traps are not aggressive recombination centers and possibly can not contribute to the device operation to a large extent.« less

A Simple Ground-Based Trap For Estimating Densities of Arboreal Leaf Insects

Treesearch

Robert A. Haack; Richard W. Blank

1991-01-01

Describes a trap design to use in collecting larval frass or head capsules for estimating densities of aboveground arthropods. The trap is light, compact, durable, and easily constructed from common inexpensive items.

Density estimation in a wolverine population using spatial capture-recapture models

USGS Publications Warehouse

Royle, J. Andrew; Magoun, Audrey J.; Gardner, Beth; Valkenbury, Patrick; Lowell, Richard E.; McKelvey, Kevin

2011-01-01

Classical closed-population capture-recapture models do not accommodate the spatial information inherent in encounter history data obtained from camera-trapping studies. As a result, individual heterogeneity in encounter probability is induced, and it is not possible to estimate density objectively because trap arrays do not have a well-defined sample area. We applied newly-developed, capture-recapture models that accommodate the spatial attribute inherent in capture-recapture data to a population of wolverines (Gulo gulo) in Southeast Alaska in 2008. We used camera-trapping data collected from 37 cameras in a 2,140-km2 area of forested and open habitats largely enclosed by ocean and glacial icefields. We detected 21 unique individuals 115 times. Wolverines exhibited a strong positive trap response, with an increased tendency to revisit previously visited traps. Under the trap-response model, we estimated wolverine density at 9.7 individuals/1,000-km2(95% Bayesian CI: 5.9-15.0). Our model provides a formal statistical framework for estimating density from wolverine camera-trapping studies that accounts for a behavioral response due to baited traps. Further, our model-based estimator does not have strict requirements about the spatial configuration of traps or length of trapping sessions, providing considerable operational flexibility in the development of field studies.

Effects of surface and interface traps on exciton and multi-exciton dynamics in core/shell quantum dots

NASA Astrophysics Data System (ADS)

Bozio, Renato; Righetto, Marcello; Minotto, Alessandro

2017-08-01

Exciton interactions and dynamics are the most important factors determining the exceptional photophysical properties of semiconductor quantum dots (QDs). In particular, best performances have been obtained for ingeniously engineered core/shell QDs. We have studied two factors entering in the exciton decay dynamics with adverse effects for the luminescence efficiency: exciton trapping at surface and interface traps, and non-radiative Auger recombination in QDs carrying either net charges or multiple excitons. In this work, we present a detailed study into the optical absorption, fluorescence dynamics and quantum yield, as well as ultrafast transient absorption properties of CdSe/CdS, CdSe/Cd0.5Zn0.5S, and CdSe/ZnS QDs as a function of shell thickness. It turns out that de-trapping processes play a pivotal role in determining steady state emission properties. By studying the excitation dependent photoluminescence quantum yields (PLQY) in different CdSe/CdxZn1-xS (x = 0, 0.5, 1) QDs, we demonstrate the different role played by hot and cold carrier trapping rates in determining fluorescence quantum yields. Finally, the use of global analysis allows us untangling the complex ultrafast transient absorption signals. Smoothing of interface potential, together with effective surface passivation, appear to be crucial factors in slowing down both Auger-based and exciton trapping recombination processes.

Improving detection tools for emerald ash borer (Coleoptera: Buprestidae): comparison of multifunnel traps, prism traps, and lure types at varying population densities.

PubMed

Crook, Damon J; Francese, Joseph A; Rietz, Michael L; Lance, David R; Hull-Sanders, Helen M; Mastro, Victor C; Silk, Peter J; Ryall, Krista L

2014-08-01

The emerald ash borer, Agrilus planipennis Fairmaire (Coleoptera: Buprestidae), is a serious invasive pest of North American ash (Fraxinus spp.) that has caused devastating mortality since it was first identified in North America in 2002. In 2012, we conducted field trapping assays that tested the efficacy of purple prism and fluon-coated green multifunnel (Lindgren funnel) traps. Traps were baited with combinations of several lures that were previously shown to be attractive to A. planipennis: manuka oil--a sesquiterpene-rich oil, (3Z)-hexenol--a green leaf volatile, or (3Z)-dodecen-12-olide [= (3Z)-lactone], a sex pheromone. Eighty-nine blocks (trap lines) were tested throughout nine states along the outer edges of the currently known A. planipennis infestation in North America. Trap catch was highest on fluon-coated green multifunnel traps, and trap detections at sites with low A. planipennis population density ranged from 72 to 76% for all trap and lure types tested. (3Z)-hexenol and (3Z)-lactone baited traps functioned as well as (3Z)-hexenol and manuka oil-baited traps. Independent of the lure used, detection rates on green fluon-coated multifunnel traps were comparable with glued purple prism traps in areas with low A. planipennis population densities.

Characterization of silicon-on-insulator wafers

NASA Astrophysics Data System (ADS)

Park, Ki Hoon

The silicon-on-insulator (SOI) is attracting more interest as it is being used for an advanced complementary-metal-oxide-semiconductor (CMOS) and a base substrate for novel devices to overcome present obstacles in bulk Si scaling. Furthermore, SOI fabrication technology has improved greatly in recent years and industries produce high quality wafers with high yield. This dissertation investigated SOI material properties with simple, yet accurate methods. The electrical properties of as-grown wafers such as electron and hole mobilities, buried oxide (BOX) charges, interface trap densities, and carrier lifetimes were mainly studied. For this, various electrical measurement techniques were utilized such as pseudo-metal-oxide-semiconductor field-effect-transistor (PseudoMOSFET) static current-voltage (I-V) and transient drain current (I-t), Hall effect, and MOS capacitance-voltage/capacitance-time (C-V/C-t). The electrical characterization, however, mainly depends on the pseudo-MOSFET method, which takes advantage of the intrinsic SOI structure. From the static current-voltage and pulsed measurement, carrier mobilities, lifetimes and interface trap densities were extracted. During the course of this study, a pseudo-MOSFET drain current hysteresis regarding different gate voltage sweeping directions was discovered and the cause was revealed through systematic experiments and simulations. In addition to characterization of normal SOI, strain relaxation of strained silicon-on-insulator (sSOI) was also measured. As sSOI takes advantage of wafer bonding in its fabrication process, the tenacity of bonding between the sSOI and the BOX layer was investigated by means of thermal treatment and high dose energetic gamma-ray irradiation. It was found that the strain did not relax with processes more severe than standard CMOS processes, such as anneals at temperature as high as 1350 degree Celsius.

Stratified flows in complex terrain

NASA Astrophysics Data System (ADS)

Retallack, Charles

The focus of this dissertation is the study of stratified atmospheric flows in the presence of complex terrain. Two large-scale field study campaigns were carried out, each with a focus on a specific archetypal terrain. Each field study involved the utilization of remote and in-situ atmospheric monitoring devices to collect experimental data. The first of the two field studies focused on pollution transport mechanisms near an escarpment. The analysis aimed to determine the combined effect of the escarpment and ambient density stratification on the flow and aerosol pollution transport. It was found that under specific atmospheric conditions, the escarpment prompted the channeling, down-mixing, and trapping of aerosol pollutant plumes. The objective of the second field campaign was the study of stratified flows in a mountain valley. Analysis revealed that buoyancy driven katabatic currents originating on the surrounding valley slopes created a scenario in which a down-slope gravity current transitioned into an intrusive gravity current. The intrusive gravity current propagated near the interface of a density stratified lower ambient layer and a non-stratified upper ambient layer. A combination of shallow water theory and energy arguments is used to produce a model for the propagation of a gravity current moving along the interface of a homogeneous ambient layer and a linearly stratified layer. It is found that the gravity current propagating entirely within the homogeneous layer travels at the greatest speed. As the relative density of the gravity current is increased, the gravity current begins to slump below the interface of the two layers and the propagation speed decreases.

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

Surface flashover performance of epoxy resin microcomposites improved by electron beam irradiation

NASA Astrophysics Data System (ADS)

Huang, Yin; Min, Daomin; Li, Shengtao; Li, Zhen; Xie, Dongri; Wang, Xuan; Lin, Shengjun

2017-06-01

The influencing mechanism of electron beam irradiation on surface flashover of epoxy resin/Al2O3 microcomposite was investigated. Epoxy resin/Al2O3 microcomposite samples with a diameter of 50 mm and a thickness of 1 mm were prepared. The samples were irradiated by electron beam with energies of 10 and 20 keV and a beam current of 5 μA for 5 min. Surface potential decay, surface conduction, and surface flashover properties of untreated and irradiated samples were measured. Both the decay rate of surface potential and surface conductivity decrease with an increase in the energy of electron beam. Meanwhile, surface flashover voltage increase. It was found that both the untreated and irradiated samples have two trap centers, which are labeled as shallow and deep traps. The increase in the energy and density of deep surface traps enhance the ability to capture primary emitted electrons. In addition, the decrease in surface conductivity blocks electron emission at the cathode triple junction. Therefore, electron avalanche at the interface between gas and an insulating material would be suppressed, eventually improving surface flashover voltage of epoxy resin microcomposites.

Polymeric and Molecular Materials for Advanced Organic Electronics

DTIC Science & Technology

2011-07-25

printable variants. All have excellent dielectric and insulating properties, a remarkable ability to minimize trapped charge between thin film transistor... trapped charge density, and hence the corresponding OTFT device performance. Under this program we first discovered that OTFT performance is...deep, high- density charge traps must be overcome for efficient FET operation, it has been postulated that in most OFETs, shallow lower-density (~10

Density estimation using the trapping web design: A geometric analysis

USGS Publications Warehouse

Link, W.A.; Barker, R.J.

1994-01-01

Population densities for small mammal and arthropod populations can be estimated using capture frequencies for a web of traps. A conceptually simple geometric analysis that avoid the need to estimate a point on a density function is proposed. This analysis incorporates data from the outermost rings of traps, explaining large capture frequencies in these rings rather than truncating them from the analysis.

Nanoimprint-Transfer-Patterned Solids Enhance Light Absorption in Colloidal Quantum Dot Solar Cells.

PubMed

Kim, Younghoon; Bicanic, Kristopher; Tan, Hairen; Ouellette, Olivier; Sutherland, Brandon R; García de Arquer, F Pelayo; Jo, Jea Woong; Liu, Mengxia; Sun, Bin; Liu, Min; Hoogland, Sjoerd; Sargent, Edward H

2017-04-12

Colloidal quantum dot (CQD) materials are of interest in thin-film solar cells due to their size-tunable bandgap and low-cost solution-processing. However, CQD solar cells suffer from inefficient charge extraction over the film thicknesses required for complete absorption of solar light. Here we show a new strategy to enhance light absorption in CQD solar cells by nanostructuring the CQD film itself at the back interface. We use two-dimensional finite-difference time-domain (FDTD) simulations to study quantitatively the light absorption enhancement in nanostructured back interfaces in CQD solar cells. We implement this experimentally by demonstrating a nanoimprint-transfer-patterning (NTP) process for the fabrication of nanostructured CQD solids with highly ordered patterns. We show that this approach enables a boost in the power conversion efficiency in CQD solar cells primarily due to an increase in short-circuit current density as a result of enhanced absorption through light-trapping.

Comparison of trap types and colors for capturing emerald ash borer adults at different population densities.

PubMed

Poland, Therese M; Mccullough, Deborah G

2014-02-01

Results of numerous trials to evaluate artificial trap designs and lures for detection of Agrilus planipennis Fairmaire, the emerald ash borer, have yielded inconsistent results, possibly because of different A. planipennis population densities in the field sites. In 2010 and 2011, we compared 1) green canopy traps, 2) purple canopy traps, 3) green double-decker traps, and 4) purple double-decker traps in sites representing a range of A. planipennis infestation levels. Traps were baited with cis-3-hexenol in both years, plus an 80:20 mixture of Manuka and Phoebe oil (2010) or Manuka oil alone (2011). Condition of trees bearing canopy traps, A. planipennis infestation level of trees in the vicinity of traps, and number of A. planipennis captured per trap differed among sites in both years. Overall in both years, more females, males, and beetles of both sexes were captured on double-decker traps than canopy traps, and more beetles of both sexes (2010) or females (2011) were captured on purple traps than green traps. In 2010, detection rates were higher for purple (100%) and green double-decker traps (100%) than for purple (82%) or green canopy traps (64%) at sites with very low to low A. planipennis infestation levels. Captures of A. planipennis on canopy traps consistently increased with the infestation level of the canopy trap-bearing trees. Differences among trap types were most pronounced at sites with low A. planipennis densities, where more beetles were captured on purple double-decker traps than on green canopy traps in both years.

Simulation approach for optimization of ZnO/c-WSe{}_{2} heterojunction solar cells

NASA Astrophysics Data System (ADS)

Huang, Shihua; Li, Qiannan; Chi, Dan; Meng, Xiuqing; He, Lü

2017-04-01

Taking into account defect density in WSe{}2, interface recombination between ZnO and WSe{}2, we presented a simulation study of ZnO/crystalline WSe{}2 heterojunction (HJ) solar cell using wxAMPS simulation software. The optimal conversion efficiency 39.07% for n-ZnO/p-c-WSe{}2 HJ solar cell can be realized without considering the impact of defects. High defect density (> 1.0× {10}11 cm{}-2) in c-WSe{}2 and large trap cross-section (> 1.0 × 10{}-10 cm{}2) have serious impact on solar cell efficiency. A thin p-WSe{}2 layer is intentionally inserted between ZnO layer and c-WSe{}2 to investigate the effect of the interface recombination. The interface properties are very crucial to the performance of ZnO/c-WSe{}2HJ solar cell. The affinity of ZnO value range between 3.7-4.5 eV gives the best conversion efficiency. Project supported by the Natural Science Foundation of Zhejiang Province (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean -Christophe

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grownmore » on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. Here, these results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices.« less

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide.

PubMed

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean-Christophe; Liu, Fangze; Stoumpos, Costas C; Traore, Boubacar; Kepenekian, Mikael; Durand, Olivier; Katan, Claudine; Tretiak, Sergei; Crochet, Jared; Ajayan, Pulickel M; Kanatzidis, MercouriG; Even, Jacky; Mohite, Aditya D

2018-02-01

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grown on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. These results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide

DOE PAGES

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean -Christophe; ...

2017-12-11

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grownmore » on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. Here, these results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices.« less

Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Jurkovič, M.; Válik, L.

2014-09-14

Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from E C-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement betweenmore » experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about E C-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.« less

Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors.

PubMed

Baek, Seung Woon; Ha, Jong-Woon; Yoon, Minho; Hwang, Do-Hoon; Lee, Jiyoul

2018-06-06

Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting copolymer-based OFETs, and the use of shellac as a dielectric layer facilitates electron transport at the interface with D-A-type copolymer channels.

ZrO2 film interfaces with Si and SiO2

NASA Astrophysics Data System (ADS)

Lopez, C. M.; Suvorova, N. A.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

2005-08-01

The interface formed by the thermal oxidation of sputter-deposited Zr metal onto Si(100)- and SiO2-coated Si(100) wafers was studied in situ and in real time using spectroscopic ellipsometry (SE) in the 1.5-4.5 photon energy range and mass spectrometry of recoiled ions (MSRI). SE yielded optical properties for the film and interface and MSRI yielded film and interface composition. An optical model was developed and verified using transmission electron microscopy. Interfacial reaction of the ZrO2 was observed for both substrates, with more interaction for Si substrates. Equivalent oxide thicknesses and interface trap levels were determined on capacitors with lower trap levels found on samples with a thicker SiO2 underlayer. In addition to the optical properties for the intermixed interface layer, the optical properties for Zr metal and unreacted ZrO2 are also reported.

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

NASA Astrophysics Data System (ADS)

Song, Liang; Fu, Kai; Zhang, Zhili; Sun, Shichuang; Li, Weiyi; Yu, Guohao; Hao, Ronghui; Fan, Yaming; Shi, Wenhua; Cai, Yong; Zhang, Baoshun

2017-12-01

In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It's indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polyakov, A. Y., E-mail: aypolyakov@gmail.com; Smirnov, N. B.; Govorkov, A. V.

2014-05-14

Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10{sup 17} cm{sup −3} to (2–5) × 10{sup 14} cm{sup −3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10{sup 13} cm{sup −3} versusmore » 2.9 × 10{sup 16} cm{sup −3} in the standard samples, with a similar decrease in the electron traps concentration.« less

Optoelectronically probing the density of nanowire surface trap states to the single state limit

NASA Astrophysics Data System (ADS)

Dan, Yaping

2015-02-01

Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 109 cm-2/eV at deep levels to 1012 cm-2/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

A hierarchical model for estimating density in camera-trap studies

USGS Publications Warehouse

Royle, J. Andrew; Nichols, James D.; Karanth, K.Ullas; Gopalaswamy, Arjun M.

2009-01-01

Estimating animal density using capture–recapture data from arrays of detection devices such as camera traps has been problematic due to the movement of individuals and heterogeneity in capture probability among them induced by differential exposure to trapping.We develop a spatial capture–recapture model for estimating density from camera-trapping data which contains explicit models for the spatial point process governing the distribution of individuals and their exposure to and detection by traps.We adopt a Bayesian approach to analysis of the hierarchical model using the technique of data augmentation.The model is applied to photographic capture–recapture data on tigers Panthera tigris in Nagarahole reserve, India. Using this model, we estimate the density of tigers to be 14·3 animals per 100 km2 during 2004.Synthesis and applications. Our modelling framework largely overcomes several weaknesses in conventional approaches to the estimation of animal density from trap arrays. It effectively deals with key problems such as individual heterogeneity in capture probabilities, movement of traps, presence of potential ‘holes’ in the array and ad hoc estimation of sample area. The formulation, thus, greatly enhances flexibility in the conduct of field surveys as well as in the analysis of data, from studies that may involve physical, photographic or DNA-based ‘captures’ of individual animals.

Collective excitation frequencies and stationary states of trapped dipolar Bose-Einstein condensates in the Thomas-Fermi regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bijnen, R. M. W. van; Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1; Parker, N. G.

We present a general method for obtaining the exact static solutions and collective excitation frequencies of a trapped Bose-Einstein condensate (BEC) with dipolar atomic interactions in the Thomas-Fermi regime. The method incorporates analytic expressions for the dipolar potential of an arbitrary polynomial density profile, thereby reducing the problem of handling nonlocal dipolar interactions to the solution of algebraic equations. We comprehensively map out the static solutions and excitation modes, including non-cylindrically-symmetric traps, and also the case of negative scattering length where dipolar interactions stabilize an otherwise unstable condensate. The dynamical stability of the excitation modes gives insight into the onsetmore » of collapse of a dipolar BEC. We find that global collapse is consistently mediated by an anisotropic quadrupolar collective mode, although there are two trapping regimes in which the BEC is stable against quadrupole fluctuations even as the ratio of the dipolar to s-wave interactions becomes infinite. Motivated by the possibility of a fragmented condensate in a dipolar Bose gas due to the partially attractive interactions, we pay special attention to the scissors modes, which can provide a signature of superfluidity, and identify a long-range restoring force which is peculiar to dipolar systems. As part of the supporting material for this paper we provide the computer program used to make the calculations, including a graphical user interface.« less

Motion of Optically Heated Spheres at the Water-Air Interface.

PubMed

Girot, A; Danné, N; Würger, A; Bickel, T; Ren, F; Loudet, J C; Pouligny, B

2016-03-22

A micrometer-sized spherical particle classically equilibrates at the water-air interface in partial wetting configuration, causing about no deformation to the interface. In condition of thermal equilibrium, the particle just undergoes faint Brownian motion, well visible under a microscope. We report experimental observations when the particle is made of a light-absorbing material and is heated up by a vertical laser beam. We show that, at small laser power, the particle is trapped in on-axis configuration, similarly to 2-dimensional trapping of a transparent sphere by optical forces. Conversely, on-axis trapping becomes unstable at higher power. The particle escapes off the laser axis and starts orbiting around the axis. We show that the laser-heated particle behaves as a microswimmer with velocities on the order of several 100 μm/s with just a few milliwatts of laser power.

A pentacene monolayer trapped between graphene and a substrate.

PubMed

Zhang, Qicheng; Peng, Boyu; Chan, Paddy Kwok Leung; Luo, Zhengtang

2015-09-21

A self-assembled pentacene monolayer can be fabricated between the solid-solid interface of few-layered graphene (FLG) and the mica substrate, through a diffusion-spreading method. By utilizing a transfer method that allows us to sandwich pentacene between graphene and mica, followed by controlled annealing, we enabled the diffused pentacene to be trapped in the interfaces and led to the formation of a stable monolayer. We found that the formation of a monolayer is kinetically favored by using a 2D Ising lattice gas model for pentacene trapped between the graphene-substrate interfaces. This kinetic Monte Carlo simulation results indicate that, due to the graphene substrate enclosure, the spreading of the first layer proceeds faster than the second layer, as the kinetics favors the filling of voids by molecules from the second layer. This graphene assisted monolayer assembly method provides a new avenue for the fabrication of two-dimensional monolayer structures.

Trap-assisted transition between Schottky emission and Fowler-Nordheim tunneling in the interfacial-memristor based on Bi2S3 nano-networks

NASA Astrophysics Data System (ADS)

Tian, Ye; Jiang, Lianjun; Zhang, Xuejun; Zhang, Guangfu; Zhu, Qiuxiang

2018-03-01

For the usage of the memristors in functional circuits, a predictive physical model is of great importance. However, other than the developments of the memristive models accounting bulky effects, the achievements on simulating the interfacial memristance are still insufficient. Here we provide a physical model to describe the electrical switching of the memristive interface. It considers the trap-assisted transition between Schottky emission and Fowler-Nordheim tunneling, and successfully reproduces the memristive behaviors occurring on the interface between Bi2S3 nano-networks and F-doped SnO2. Such success not only allows us uncover several features of the memristive interface including the distribution nature of the traps, barrier height/thickness and so on, but also provides a foundation from which we can quantitatively simulate the real interfacial memristor.

Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schroeder, Herbert

2015-06-07

In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current–electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current–electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by themore » applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F{sup 1/2}) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current–electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different oxide materials; the barriers for electrons and holes at the interfaces simulating different electrode materials; the temperature. The main results and conclusions are: (1) For a single type of trap present only (donor-like or acceptor-like), none of the simulated current density curves shows the expected behavior of the PFE and in most cases within the tested parameter field the effect of PFE is negligibly small. (2) For both types of traps present (compensation) only in the case of exact compensation, the expected slope in the PF-plot was nearly found for a wider range of the applied electric field, but for a very small range of the tested parameter field because of the very restricting additional conditions: first, the quasi-fermi level of the current controlling particle (electrons or holes) has to be 0.1 to 0.5 eV closer to the respective band limit than the zero-field energy level of the respective traps and, second, the compensating trap energy level has to be shallow. The conclusion from all these results is: the observation of the PFE as dominating current mechanism in MIM stacks with thin dielectric (oxide) films (typically 30 nm) is rather improbable!.« less

Trap density of states in small-molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang L.; Haas, Simon; Krellner, Cornelius; Mathis, Thomas; Batlogg, Bertram

2010-04-01

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap [trap density of states (trap DOS)] of small-molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from space-charge-limited current measurements. This was done by comparing data from a large number of samples including thin-film transistors (TFT’s), single crystal field-effect transistors (SC-FET’s) and bulk samples. The compilation of all data strongly suggests that structural defects associated with grain boundaries are the main cause of “fast” hole traps in TFT’s made with vacuum-evaporated pentacene. For high-performance transistors made with small-molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric surface. In samples with very low trap densities, we sometimes observe a steep increase in the trap DOS very close (<0.15eV) to the mobility edge with a characteristic slope of 10-20 meV. It is discussed to what degree band broadening due to the thermal fluctuation of the intermolecular transfer integral is reflected in this steep increase in the trap DOS. Moreover, we show that the trap DOS in TFT’s with small-molecule semiconductors is very similar to the trap DOS in hydrogenated amorphous silicon even though polycrystalline films of small-molecules with van der Waals-type interaction on the one hand are compared with covalently bound amorphous silicon on the other hand.

Interface engineering and reliability characteristics of hafnium dioxide with poly silicon gate and dual metal (ruthenium-tantalum alloy, ruthenium) gate electrode for beyond 65 nm technology

NASA Astrophysics Data System (ADS)

Kim, Young-Hee

Chip density and performance improvements have been driven by aggressive scaling of semiconductor devices. In both logic and memory applications, SiO 2 gate dielectrics has reached its physical limit, direct tunneling resulting from scaling down of dielectrics thickness. Therefore high-k dielectrics have attracted a great deal of attention from industries as the replacement of conventional SiO2 gate dielectrics. So far, lots of candidate materials have been evaluated and Hf-based high-k dielectrics were chosen to the promising materials for gate dielectrics. However, lots of issues were identified and more thorough researches were carried out on Hf-based high-k dielectrics. For instances, mobility degradation, charge trapping, crystallization, Fermi level pinning, interface engineering, and reliability studies. In this research, reliability study of HfO2 were explored with poly gate and dual metal (Ru-Ta alloy, Ru) gate electrode as well as interface engineering. Hard breakdown and soft breakdown were compared and Weibull slope of soft breakdown was smaller than that of hard breakdown, which led to a potential high-k scaling issue. Dynamic reliability has been studied and the combination of trapping and detrapping contributed the enhancement of lifetime projection. Polarity dependence was shown that substrate injection might reduce lifetime projection as well as it increased soft breakdown behavior. Interface tunneling mechanism was suggested with dual metal gate technology. Soft breakdown (l st breakdown) was mainly due to one layer breakdown of bi-layer structure. Low weibull slope was in part attributed to low barrier height of HfO 2 compared to interface layer. Interface layer engineering was thoroughly studied in terms of mobility, swing, and short channel effect using deep sub-micron MOSFET devices. In fact, Hf-based high-k dielectrics could be scaled down to below EOT of ˜10A and it successfully achieved the competitive performance goals. However, it is still necessary to understand what is intrinsic we can not change, or what is extrinsic one we can improve.

Capillary-wave dynamics and interface structure modulation in binary Bose-Einstein condensate mixtures

NASA Astrophysics Data System (ADS)

Indekeu, Joseph O.; Van Thu, Nguyen; Lin, Chang-You; Phat, Tran Huu

2018-04-01

The localized low-energy interfacial excitations, or interfacial Nambu-Goldstone modes, of phase-segregated binary mixtures of Bose-Einstein condensates are investigated analytically. To this end a double-parabola approximation (DPA) is performed on the Lagrangian density in Gross-Pitaevskii theory for a system in a uniform potential. This DPA entails a model in which analytic expressions are obtained for the excitations underlying capillary waves or ripplons for arbitrary strength K (>1 ) of the phase segregation. The dispersion relation ω (k ) ∝k3 /2 is derived directly from the Bogoliubov-de Gennes equations in the limit that the wavelength 2 π /k is much larger than the interface width. The proportionality constant in the dispersion relation provides the static interfacial tension. A correction term in ω (k ) of order k5 /2 is calculated analytically within the DPA model. The combined result is tested against numerical diagonalization of the exact Bogoliubov-de Gennes equations. Satisfactory agreement is obtained in the range of physically relevant wavelengths. The ripplon dispersion relation is relevant to state-of-the-art experiments using (quasi)uniform optical-box traps. Furthermore, within the DPA model explicit expressions are obtained for the structural deformation of the interface due to the passing of the capillary wave. It is found that the amplitude of the wave is enhanced by an amount that is quadratic in the ratio of the phase velocity ω /k to the sound velocity c . For generic mixtures consisting of condensates with unequal healing lengths, an additional modulation is predicted of the common value of the condensate densities at the interface.

Irradiation effects in oxide dispersion strengthened (ODS) Ni-base alloys for Gen. IV nuclear reactors

NASA Astrophysics Data System (ADS)

Oono, Naoko; Ukai, Shigeharu; Kondo, Sosuke; Hashitomi, Okinobu; Kimura, Akihiko

2015-10-01

Oxide particle dispersion strengthened (ODS) Ni-base alloys are irradiated by using simulation technique (Fe/He dual-ion irradiation) to investigate the reliability to Gen. IV high-temperature reactors. The fine oxide particles with less than 10 nm in average size and approximately 8.0 × 1022 m-3 in number density remained after 101 dpa irradiation. The tiny helium bubbles were inside grains, not at grain-boundaries; it is advantageous effect of oxide particles which trap the helium atoms at the particle-matrix interface. Ni-base ODS alloys demonstrated their great ability to overcome He embrittlement.

Electrical and optical properties of diketopyrrolopyrrole-based copolymer interfaces in thin film devices.

PubMed

Adil, Danish; Kanimozhi, Catherine; Ukah, Ndubuisi; Paudel, Keshab; Patil, Satish; Guha, Suchi

2011-05-01

Two donor-acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 × 10(12) eV⁻¹ cm⁻² in TDPP-BBT and 3.5 × 10¹² eV⁻¹ cm⁻² in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10⁻³ cm²/(Vs). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Park, Jinhee; Rim, You Seung; Li, Chao; Wu, Jiechen; Goorsky, Mark; Streit, Dwight

2018-04-01

We report the device performance and stability of sputtered amorphous indium-tin-zinc-oxide (ITZO) thin-film transistors as a function of oxygen ratio [O2/(Ar + O2)] during growth. Increasing the oxygen ratio enhanced the incorporation of oxygen during ITZO film growth and reduced the concentration of deep-level defects associated with oxygen vacancies. Under illumination with no bias stress, device stability and persistent photocurrent were improved with increased oxygen ratio. Bias stress tests of the devices were also performed with and without illumination. While high oxygen ratio growth conditions resulted in decreased deep-level oxygen vacancies in the ITZO material, the same conditions resulted in degradation of the interfacial layer between the ITZO channel and dielectric due to the migration of energetic oxygen ions to the interface. Therefore, when bias stress was applied, increased carrier trap density at the interface led to a decrease in device stability that offsets any improvement in the material itself. In order to take advantage of the improved ITZO material growth at a high oxygen ratio, the interface-related problems must be solved.

Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.

2016-09-15

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) wemore » show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.« less

Peromyscus ranges at high and low population densities

USGS Publications Warehouse

Stickel, L.F.

1960-01-01

Live-trapping studies at the Patuxent Wildlife Research Center, Maryland, showed that the ranges of wood mice were larger when the population density was lower and smaller when the population density was higher. When the population density was about 1.3 male mice per acre in June 1954, the average distance recorded between traps after four or more captures was 258 feet. When the population density was about 4.1 male mice per acre in June 1957, the average distance was 119 feet. Differences were statistically significant. Females were so scarce at the low that comparisons could not be made for them. Examples from the literature also show that home range of a species may vary with population density. Other examples show that the range may vary with habitat, breeding condition and food supply. These variations in range size reduce the reliability of censuses in which relative methods are used: Lines of traps sample the population of a larger area when ranges are large than they do when ranges are small. Direct comparisons therefore will err in some degree. Error may be introduced also when line-trap data are transformed to per acre figures on the basis of home-range estimates made by area-trapping at another place or time. Variation in range size also can make it necessary to change area-trapping plans, for larger quadrants are needed when ranges are larger. It my be necessary to set traps closer together when ranges are small than when ranges are large.

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates.

PubMed

Lee, Changhee; Rathi, Servin; Khan, Muhammad Atif; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo-Hyeb; Watanabe, Kenji; Taniguchi, Takashi; Kim, Gil-Ho

2018-08-17

Molybdenum disulfide (MoS 2 ) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, homogeneous and atomic-thin MoS 2 flake are fabricated on hBN and SiO 2 substrates. This allows for a better and a precise comparison between the charge traps at the semiconductor-dielectric interfaces at MoS 2 -SiO 2 and hBN interfaces. The impact of ambient environment and entities on hysteresis is minimized by encapsulating the active MoS 2 layer with a single hBN on both the devices. The device to device variations induced by different MoS 2 layer is also eliminated by employing a single MoS 2 layer for fabricating both devices. After eliminating these additional factors which induce variation in the device characteristics, it is found from the measurements that the trapped charge density is reduced to 1.9 × 10 11 cm -2 on hBN substrate as compared to 1.1 × 10 12 cm -2 on SiO 2 substrate. Further, reduced hysteresis and stable threshold voltage are observed on hBN substrate and their dependence on gate sweep rate, sweep range, and gate stress is also studied. This precise comparison between encapsulated devices on SiO 2 and hBN substrates further demonstrate the requirement of hBN substrate and encapsulation for improved and stable performance of MoS 2 FETs.

Thermally stimulated depolarization currents and dielectric properties of Mg0.95Ca0.05TiO3 filled HDPE composites

NASA Astrophysics Data System (ADS)

Shi, Yunzhou; Zhang, Li; Zhang, Jie; Yue, Zhenxing

2017-12-01

Mg0.95Ca0.05TiO3 (MCT) filled high density polyethylene (HDPE) composites were prepared by twin-screw extrusion followed by hot pressing technique. The thermally stimulated depolarization current (TSDC) measurement was performed to analyze the contribution of charge distribution and interfacial characteristics to the dielectric loss. TSDC spectra under different polarization conditions show that the introduction of ceramic fillers engenders shallow traps in the vicinity of ceramic-polymer interface, which hinders the injection of space charge from the electrode into the polymer matrix. In the composite materials applied to an external field, charges tend to be captured by these traps. The temperature dependence of relative permittivity and dielectric loss of the composites was measured, and a strong reliance of dielectric loss on temperature was observed. In the heating process, the release of charges accumulating at interfacial region is considered to contribute to the rise in dielectric loss with the increase of temperature.

Technologies for Trapped-Ion Quantum Information Systems

DTIC Science & Technology

2016-03-21

mate- rials such as graphene and indium tin oxide, integrating devices like optical fibers and mirrors, and exploring alternative ion loading and...trapping techniques. Keywords ion traps · quantum computation · quantum information · trapped ions · ion-photon interface · graphene · indium tin oxide...displays are typically made of indium tin oxide (ITO), a material that is both an elec- trical and an optical conductor. However, using ITO electrodes

Kelvin probe microscopic visualization of charge storage at polystyrene interfaces with pentacene and gold

NASA Astrophysics Data System (ADS)

Dawidczyk, T. J.; Johns, G. L.; Ozgun, R.; Alley, O.; Andreou, A. G.; Markovic, N.; Katz, H. E.

2012-02-01

Charge carriers trapped in polystyrene (PS) were investigated with Kelvin probe microscopy (KPM) and thermally stimulated discharge current (TSDC). Lateral heterojunctions of pentacene/PS were scanned using KPM, effectively observing polarization along a side view of a lateral nonvolatile organic field-effect transistor dielectric interface. TSDC was used to observe charge migration out of PS films and to estimate the trap energy level inside the PS, using the initial rise method.

Microstructure evolution during helium irradiation and post-irradiation annealing in a nanostructured reduced activation steel

NASA Astrophysics Data System (ADS)

Liu, W. B.; Ji, Y. Z.; Tan, P. K.; Zhang, C.; He, C. H.; Yang, Z. G.

2016-10-01

Severe plastic deformation, intense single-beam He-ion irradiation and post-irradiation annealing were performed on a nanostructured reduced activation ferritic/martensitic (RAFM) steel to investigate the effect of grain boundaries (GBs) on its microstructure evolution during these processes. A surface layer with a depth-dependent nanocrystalline (NC) microstructure was prepared in the RAFM steel using surface mechanical attrition treatment (SMAT). Microstructure evolution after helium (He) irradiation (24.8 dpa) at room temperature and after post-irradiation annealing was investigated using Transmission Electron Microscopy (TEM). Experimental observation shows that GBs play an important role during both the irradiation and the post-irradiation annealing process. He bubbles are preferentially trapped at GBs/interfaces during irradiation and cavities with large sizes are also preferentially trapped at GBs/interfaces during post-irradiation annealing, but void denuded zones (VDZs) near GBs could not be unambiguously observed. Compared with cavities at GBs and within larger grains, cavities with smaller size and higher density are found in smaller grains. The average size of cavities increases rapidly with the increase of time during post-irradiation annealing at 823 K. Cavities with a large size are observed just after annealing for 5 min, although many of the cavities with small sizes also exist after annealing for 240 min. The potential mechanism of cavity growth behavior during post-irradiation annealing is also discussed.

Resonant Formation and Control of m-Fold Symmetric V-States

NASA Astrophysics Data System (ADS)

Friedland, Lazar; Shagalov, Arkadi

2000-10-01

Magnetized, pure electron plasmas trapped in a Malmberg-Penning trap can be modeled (in the drift approximation) by two-dimensional Euler equations of ideal fluids. The plasma density in this approximation is analogous to vorticity, while the radial electric field potential to the stream function of the fluid velocity field. For instance, electron plasma cylinder aligned with the magnetic field is analogous to a circular vortex patch solution of an ideal fluid. We shall show that by starting in such a circular equilibrium one can drive an m-fold symmetric interface (vortex) waves in two dimensions (V-states, discovered by Deem and Zabusky [1] nearly 20 years ago)into a highly nonlinear excitation by applying a weak external oscillating potential of appropriate symmetry and slowly varying the frequency of these oscillations. The phenomenon is due to autoresonance [2,3] in the system as the excited plasma (vortex) boundary preserves its functional form despite the drive, but self-adjusts the aspect ratio to synchronize with the driving potential oscillations. A similar approach can be used in controlling interface dynamics subject to global constraints in many other fields of physics. Work supported by Israel Science Foundation grant 607-97 and INTAS grant 99-1068. [1] G. Deem and N. Zabusky, Phys. Rev. Lett. 40, 859 (1978). [2] L. Friedland, Phys. Rev. E, 4106 (1999). [3] J. Fajans, E. Gilson, and L. Friedland, Phys. Rev. Lett. 82, 4444 (1999).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawase, Kazumasa; Uehara, Yasushi; Teramoto, Akinobu

Silicon dioxide (SiO{sub 2}) films formed by chemical vapor deposition (CVD) were treated with oxygen radical oxidation using Ar/O{sub 2} plasma excited by microwave. The mass density depth profiles, carrier trap densities, and current-voltage characteristics of the radical-oxidized CVD-SiO{sub 2} films were investigated. The mass density depth profiles were estimated with x ray reflectivity measurement using synchrotron radiation of SPring-8. The carrier trap densities were estimated with x ray photoelectron spectroscopy time-dependent measurement. The mass densities of the radical-oxidized CVD-SiO{sub 2} films were increased near the SiO{sub 2} surface. The densities of the carrier trap centers in these films weremore » decreased. The leakage currents of the metal-oxide-semiconductor capacitors fabricated by using these films were reduced. It is probable that the insulation properties of the CVD-SiO{sub 2} film are improved by the increase in the mass density and the decrease in the carrier trap density caused by the restoration of the Si-O network with the radical oxidation.« less

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (<400sp°C). The double dilution was achieved by using a Ar (He) carrier for silane and its subsequent dilution by Hsb2. Structural and electrical properties of the films have been investigated over a wide growth space (temperature, power, pressure and dilution). Amorphous Si films deposited by silane diluted in He showed a compact nature and a hydrogen content of ˜8 at.% with a photo/dark conductivity ratio of 10sp4. Thin film transistors (W/L = 500/25) fabricated on these films, showed an on/off ratio of ˜10sp6 and a low threshold voltage of 2.92 volts. Microcrystalline Si films with a high crystalline content (˜80%) were also prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

Line-Trapping of Codling Moth (Lepidoptera: Tortricidae): A Novel Approach to Improving the Precision of Capture Numbers in Traps Monitoring Pest Density.

PubMed

Adams, C G; McGhee, P S; Schenker, J H; Gut, L J; Miller, J R

2017-08-01

This field study of codling moth, Cydia pomonella (L.), response to single versus multiple monitoring traps baited with codlemone demonstrates that precision of a given capture number is alarmingly poor when the population is held constant by releasing moths. Captures as low as zero and as high as 12 males per single trap are to be expected where the catch mode is three. Here, we demonstrate that the frequency of false negatives and overestimated positives for codling moth trapping can be substantially reduced by employing the tactic of line-trapping, where five traps were deployed 4 m apart along a row of apple trees. Codling moth traps spaced closely competed only slightly. Therefore, deploying five traps closely in a line is a sampling technique nearly as good as deploying five traps spaced widely. But line trapping offers a substantial savings in time and therefore cost when servicing aggregated versus distributed traps. As the science of pest management matures by mastering the ability to translate capture numbers into estimates of absolute pest density, it will be important to employ a tactic like line-trapping so as to shrink the troublesome variability associated with capture numbers in single traps that thwarts accurate decisions about if and when to spray. Line-trapping might similarly increase the reliability and utility of density estimates derived from capture numbers in monitoring traps for various pest and beneficial insects. © The Authors 2017. Published by Oxford University Press on behalf of Entomological Society of America.

Rigorous investigation of the reduced density matrix for the ideal Bose gas in harmonic traps by a loop-gas-like approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beau, Mathieu, E-mail: mbeau@stp.dias.ie; Savoie, Baptiste, E-mail: baptiste.savoie@gmail.com

2014-05-15

In this paper, we rigorously investigate the reduced density matrix (RDM) associated to the ideal Bose gas in harmonic traps. We present a method based on a sum-decomposition of the RDM allowing to treat not only the isotropic trap, but also general anisotropic traps. When focusing on the isotropic trap, the method is analogous to the loop-gas approach developed by Mullin [“The loop-gas approach to Bose-Einstein condensation for trapped particles,” Am. J. Phys. 68(2), 120 (2000)]. Turning to the case of anisotropic traps, we examine the RDM for some anisotropic trap models corresponding to some quasi-1D and quasi-2D regimes. Formore » such models, we bring out an additional contribution in the local density of particles which arises from the mesoscopic loops. The close connection with the occurrence of generalized-Bose-Einstein condensation is discussed. Our loop-gas-like approach provides relevant information which can help guide numerical investigations on highly anisotropic systems based on the Path Integral Monte Carlo method.« less

Characterization, modeling and physical mechanisms of different surface treatment methods at room temperature on the oxide and interfacial quality of the SiO2 film using the spectroscopic scanning capacitance microscopy

NASA Astrophysics Data System (ADS)

Wong, Kin Mun

In this article, a simple, low cost and combined surface treatment method [pre-oxidation immersion of the p-type silicon (Si) substrate in hydrogen peroxide (H2O2) and post oxidation ultra-violet (UV) irradiation of the silicon-dioxide (SiO2) film] at room temperature is investigated. The interface trap density at midgap [Dit(mg)] of the resulting SiO2 film (denoted as sample 1A) is quantified from the full width at half-maximum of the scanning capacitance microscopy (SCM) differential capacitance (dC/dV) characteristics by utilizing a previously validated theoretical model. The Dit(mg) of sample 1A is significantly lower than the sample without any surface treatments which indicates that it is a viable technique for improving the interfacial quality of the thicker SiO2 films prepared by wet oxidation. Moreover, the proposed combined surface treatment method may possibly complement the commonly used forming gas anneal process to further improve the interfacial quality of the SiO2 films. The positive shift of the flatband voltage due to the overall oxide charges (estimated from the probe tip dc bias at the peak dC/dV spectra) of sample 1A suggests the presence of negative oxide fixed charge density (Nf) in the oxide. In addition, an analytical formula is derived to approximate the difference of the Nf values between the oxide samples that are immersed in H2O2 and UV irradiated from their measured SCM dC/dV spectra. Conversely, some physical mechanisms are proposed that result in the ionization of the SiO- species (which are converted from the neutral SiOH groups that originate from the pre-oxidation immersion in H2O2 and ensuing wet oxidation) during the UV irradiation as well as the UV photo-injected electrons from the Si substrate (which did not interact with the SiOH groups). They constitute the source of mobile electrons which partially passivate the positively charged empty donor-like interface traps at the Si-SiO2 interface.

Device Modeling and Characterization for CIGS Solar Cells

NASA Astrophysics Data System (ADS)

Song, Sang Ho

We studied the way to achieve high efficiency and low cost of CuIn1-xGaxSe2 (CIGS) solar cells. The Fowler-Nordheim (F-N) tunneling currents at low bias decreased the shunt resistances and degraded the fill factor and efficiency. The activation energies of majority traps were directly related with F-N tunneling currents by the energy barriers. Air anneals decreased the efficiency from 7.74% to 5.18% after a 150 °C, 1000 hour anneal. The decrease of shunt resistance due to F-N tunneling and the increase of series resistance degrade the efficiencies of solar cells. Air anneal reduces the free carrier densities by the newly generated Cu interstitial defects (Cui). Mobile Cui defects induce the metastability in CIGS solar cell. Since oxygen atoms are preferred to passivate the Se vacancies thus Cu interstitial defects explains well metastability of CIGS solar cells. Lattice mismatch and misfit stress between layers in CIGS solar cells can explain the particular effects of CIGS solar cells. The misfits of 35.08° rotated (220/204) CIGS to r-plane (102) MoSe2 layers are 1% ˜ -4% lower than other orientation and the lattice constants of two layers in short direction are matched at Ga composition x=0.35. This explains well the preferred orientation and the maximum efficiency of Ga composition effects. Misfit between CIGS and CdS generated the dislocations in CdS layer as the interface traps. Thermionic emission currents due to interface traps limit the open circuit voltage at high Ga composition. The trap densities were calculated by critical thickness and dislocation spacing and the numerical device simulation results were well matched with the experimental results. A metal oxide broken-gap p-n heterojunction is suggested for tunnel junction for multi-junction polycrystalline solar cells and we examined the characteristics of broken-gap tunnel junction by numerical simulation. Ballistic transport mechanism explains well I-V characteristics of broken-gap junction. P-type Cu2O and n-type In2O3 broken-gap heterojunction is effective with the CIGS tandem solar cells. The junction has linear I-V characteristics with moderate carrier concentration (2x1017 cm-3) and the resistance is lower than GaAs tunnel junction. The efficiency of a CGS/CIS tandem solar cells was 24.1% with buffer layers. And no significant degradations are expected due to broken gap junction.

Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors

NASA Astrophysics Data System (ADS)

McMorrow, Julian J.; Cress, Cory D.; Arnold, Heather N.; Sangwan, Vinod K.; Jariwala, Deep; Schmucker, Scott W.; Marks, Tobin J.; Hersam, Mark C.

2017-02-01

Atomically thin MoS2 has generated intense interest for emerging electronics applications. Its two-dimensional nature and potential for low-power electronics are particularly appealing for space-bound electronics, motivating the need for a fundamental understanding of MoS2 electronic device response to the space radiation environment. In this letter, we quantify the response of MoS2 field-effect transistors (FETs) to vacuum ultraviolet (VUV) total ionizing dose radiation. Single-layer (SL) and multilayer (ML) MoS2 FETs are compared to identify differences that arise from thickness and band structure variations. The measured evolution of the FET transport properties is leveraged to identify the nature of VUV-induced trapped charge, isolating the effects of the interface and bulk oxide dielectric. In both the SL and ML cases, oxide trapped holes compete with interface trapped electrons, exhibiting an overall shift toward negative gate bias. Raman spectroscopy shows no variation in the MoS2 signatures as a result of VUV exposure, eliminating significant crystalline damage or oxidation as possible radiation degradation mechanisms. Overall, this work presents avenues for achieving radiation-hard MoS2 devices through dielectric engineering that reduces oxide and interface trapped charge.

Model for thickness dependence of radiation charging in MOS structures

NASA Technical Reports Server (NTRS)

Viswanathan, C. R.; Maserjian, J.

1976-01-01

The model considers charge buildup in MOS structures due to hole trapping in the oxide and the creation of sheet charge at the silicon interface. The contribution of hole trapping causes the flatband voltage to increase with thickness in a manner in which square and cube dependences are limiting cases. Experimental measurements on samples covering a 200 - 1000 A range of oxide thickness are consistent with the model, using independently obtained values of hole-trapping parameters. An important finding of our experimental results is that a negative interface charge contribution due to surface states created during irradiation compensates most of the positive charge in the oxide at flatband. The tendency of the surface states to 'track' the positive charge buildup in the oxide, for all thicknesses, applies both in creation during irradiation and in annihilation during annealing. An explanation is proposed based on the common defect origin of hole traps and potential surface states.

Hierarchical models for estimating density from DNA mark-recapture studies

USGS Publications Warehouse

Gardner, B.; Royle, J. Andrew; Wegan, M.T.

2009-01-01

Genetic sampling is increasingly used as a tool by wildlife biologists and managers to estimate abundance and density of species. Typically, DNA is used to identify individuals captured in an array of traps ( e. g., baited hair snares) from which individual encounter histories are derived. Standard methods for estimating the size of a closed population can be applied to such data. However, due to the movement of individuals on and off the trapping array during sampling, the area over which individuals are exposed to trapping is unknown, and so obtaining unbiased estimates of density has proved difficult. We propose a hierarchical spatial capture-recapture model which contains explicit models for the spatial point process governing the distribution of individuals and their exposure to (via movement) and detection by traps. Detection probability is modeled as a function of each individual's distance to the trap. We applied this model to a black bear (Ursus americanus) study conducted in 2006 using a hair-snare trap array in the Adirondack region of New York, USA. We estimated the density of bears to be 0.159 bears/km2, which is lower than the estimated density (0.410 bears/km2) based on standard closed population techniques. A Bayesian analysis of the model is fully implemented in the software program WinBUGS.

Effects of trap type, placement and ash distribution on emerald ash borer captures in a low density site.

PubMed

McCullough, Deborah G; Siegert, Nathan W; Poland, Therese M; Pierce, Steven J; Ahn, Su Zie

2011-10-01

Effective methods for early detection of newly established, low density emerald ash borer (Agrilus planipennis Fairmaire) infestations are critically needed in North America. We assessed adult A. planipennis captures on four types of traps in a 16-ha site in central Michigan. The site was divided into 16 blocks, each comprised of four 50- by 50-m cells. Green ash trees (Fraxinus pennsylvanica Marshall) were inventoried by diameter class and ash phloem area was estimated for each cell. One trap type was randomly assigned to each cell in each block. Because initial sampling showed that A. planipennis density was extremely low, infested ash logs were introduced into the center of the site. In total, 87 beetles were captured during the summer. Purple double-decker traps baited with a blend of ash leaf volatiles, Manuka oil, and ethanol captured 65% of all A. planipennis beetles. Similarly baited, green double-decker traps captured 18% of the beetles, whereas sticky bands on girdled trees captured 11% of the beetles. Purple traps baited with Manuka oil and suspended in the canopies of live ash trees captured only 5% of the beetles. At least one beetle was captured on 81% of the purple double-decker traps, 56% of the green double-decker traps, 42% of sticky bands, and 25% of the canopy traps. Abundance of ash phloem near traps had no effect on captures and trap location and sun exposure had only weak effects on captures. Twelve girdled and 29 nongirdled trees were felled and sampled in winter. Current-year larvae were present in 100% of the girdled trees and 72% of the nongirdled trees, but larval density was five times higher on girdled than nongirdled trees.

Mapping of trap densities and hotspots in pentacene thin-film transistors by frequency-resolved scanning photoresponse microscopy.

PubMed

Westermeier, Christian; Fiebig, Matthias; Nickel, Bert

2013-10-25

Frequency-resolved scanning photoresponse microscopy of pentacene thin-film transistors is reported. The photoresponse pattern maps the in-plane distribution of trap states which is superimposed by the level of trap filling adjusted by the gate voltage of the transistor. Local hotspots in the photoresponse map thus indicate areas of high trap densities within the pentacene thin film. © 2013 WILEY-VCH Verlag GmbH 8 Co. KGaA, Weinheim.

Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility

NASA Astrophysics Data System (ADS)

Shijeesh, M. R.; Jayaraj, M. K.

2018-04-01

Cuprous (Cu2O) and cupric (CuO) oxide thin films have been deposited by radio frequency magnetron sputtering with two different oxygen partial pressures. The as-deposited copper oxide films were subjected to post-annealing at 300 °C for 30 min to improve the microstructural, morphological, and optical properties of thin films. Optical absorption studies revealed the existence of a large number of subgap states inside CuO films than Cu2O films. Cu2O and CuO thin film transistors (TFTs) were fabricated in an inverted staggered structure by using a post-annealed channel layer. The field effect mobility values of Cu2O and CuO TFTs were 5.20 × 10-4 cm2 V-1 s-1 and 2.33 × 10-4 cm2 V-1 s-1, respectively. The poor values of subthreshold swing, threshold voltage, and field effect mobility of the TFTs were due to the charge trap density at the copper oxide/dielectric interface as well as defect induced trap states originated from the oxygen vacancies inside the bulk copper oxide. In order to study the distribution of the trap states in the Cu2O and CuO active layer, the temperature dependent transfer characteristics of transistors in the temperature range between 310 K and 340 K were studied. The observed subgap states were found to be decreasing exponentially inside the bandgap, with CuO TFT showing higher subgap states than Cu2O TFT. The high-density hole trap states in the CuO channel are one of the plausible reasons for the lower mobility in CuO TFT than in Cu2O TFT. The origin of these subgap states was attributed to the impurities or oxygen vacancies present in the CuO channel layer.

Dynamics and reactivity of trapped electrons on supported ice crystallites.

PubMed

Stähler, Julia; Gahl, Cornelius; Wolf, Martin

2012-01-17

The solvation dynamics and reactivity of localized excess electrons in aqueous environments have attracted great attention in many areas of physics, chemistry, and biology. This manifold attraction results from the importance of water as a solvent in nature as well as from the key role of low-energy electrons in many chemical reactions. One prominent example is the electron-induced dissociation of chlorofluorocarbons (CFCs). Low-energy electrons are also critical in the radiation chemistry that occurs in nuclear reactors. Excess electrons in an aqueous environment are localized and stabilized by the local rearrangement of the surrounding water dipoles. Such solvated or hydrated electrons are known to play an important role in systems such as biochemical reactions and atmospheric chemistry. Despite numerous studies over many years, little is known about the microscopic details of these electron-induced chemical processes, and interest in the fundamental processes involved in the reactivity of trapped electrons continues. In this Account, we present a surface science study of the dynamics and reactivity of such localized low-energy electrons at D(2)O crystallites that are supported by a Ru(001) single crystal metal surface. This approach enables us to investigate the generation and relaxation dynamics as well as dissociative electron attachment (DEA) reaction of excess electrons under well-defined conditions. They are generated by photoexcitation in the metal template and transferred to trapping sites at the vacuum interface of crystalline D(2)O islands. In these traps, the electrons are effectively decoupled from the electronic states of the metal template, leading to extraordinarily long excited state lifetimes on the order of minutes. Using these long-lived, low-energy electrons, we study the DEA to CFCl(3) that is coadsorbed at very low concentrations (∼10(12) cm(-2)). Using rate equations and direct measurement of the change of surface dipole moment, we estimated the electron surface density for DEA, yielding cross sections that are orders of magnitude higher than the electron density measured in the gas phase.

Low temperature solution processed high-κ ZrO2 gate dielectrics for nanoelectonics

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

2016-05-01

The high-κ gate dielectrics, specifically amorphous films offer salient features such as exceptional mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, ∼35 nm thick amorphous ZrO2 films were deposited on silicon substrate at low temperature (300 °C, 1 h) from facile spin-coating method and characterized by various analytical techniques. The X-ray diffraction and X-ray photoelectron spectroscopy reveal the formation of amorphous phase ZrO2, while ellipsometry analysis together with the Atomic Force Microscope suggest the formation of dense film with surface roughness of 1.5 Å, respectively. The fabricated films were integrated in metal-oxide-semiconductor (MOS) structures to check the electrical capabilities. The oxide capacitance (Cox), flat band capacitance (CFB), flat band voltage (VFB), dielectric constant (κ) and oxide trapped charges (Qot) extracted from high frequency (1 MHz) C-V curve are 186 pF, 104 pF, 0.37 V, 15 and 2 × 10-11 C, respectively. The small flat band voltage 0.37 V, narrow hysteresis and very little frequency dispersion between 10 kHz-1 MHz suggest an excellent a-ZrO2/Si interface with very less trapped charges in the oxide. The films exhibit a low leakage current density 4.7 × 10-9 A/cm2 at 1 V. In addition, the charge transport mechanism across the MOSC is analyzed and found to have a strong bias dependence. The space charge limited conduction mechanism is dominant in the high electric field region (1.3-5 V) due to the presence of traps, while the trap-supported tunneling is prevailed in the intermediate region (0.35-1.3 V). Low temperature solution processed ZrO2 thin films obtained are of high quality and find their importance as a potential dielectric layer on Si and polymer based flexible electronics.

Comparison Of trap types and colors for capturing emerald ash borer adults at different population densities

Treesearch

Therese M. Poland; Deborah G. Mccullough

2014-01-01

Results of numerous trials to evaluate artificial trap designs and lures for detection of Agrilus planipennis Fairmaire, the emerald ash borer, have yielded inconsistent results, possibly because of different A. planipennis population densities in the field sites. In 2010 and 2011, we compared 1) green canopy traps, 2) purple...

Acoustic trapping in bubble-bounded micro-cavities

NASA Astrophysics Data System (ADS)

O'Mahoney, P.; McDougall, C.; Glynne-Jones, P.; MacDonald, M. P.

2016-12-01

We present a method for controllably producing longitudinal acoustic trapping sites inside microfluidic channels. Air bubbles are injected into a micro-capillary to create bubble-bounded `micro-cavities'. A cavity mode is formed that shows controlled longitudinal acoustic trapping between the two air/water interfaces along with the levitation to the centre of the channel that one would expect from a lower order lateral mode. 7 μm and 10 μm microspheres are trapped at the discrete acoustic trapping sites in these micro-cavities.We show this for several lengths of micro-cavity.

Stability and minimum size of colloidal clusters on a liquid-air interface.

PubMed

Pergamenshchik, V M

2012-02-01

A vertical force applied to each of two colloids, trapped at a liquid-air interface, induces their logarithmic pairwise attraction. I recently showed [Phys. Rev. E 79, 011407 (2009)] that in clusters of size R much larger than the capillary length λ, the attraction changes to that of a power law and is much stronger due to a many-body effect, and I derived two equations that describe the equilibrium coarse-grained meniscus profile and colloid density in such clusters. In this paper, this theory is shown also to describe small clusters with R≪ λ provided the number N of colloids therein is sufficiently large. An analytical solution for a small circular cluster with an arbitrary short-range power-law pairwise repulsion is found. The energy of a cluster is obtained as a function of its radius R and colloid number N. As in large clusters, the attraction force and energy universally scale with the distance L between colloids as L(-3) and L(-2), respectively, for any repulsion forces. The states of an equilibrium cluster, predicted by the theory, are shown to be stable with respect to small perturbations of the meniscus profile and colloid density. The minimum number of colloids in a circular cluster, which sustains the thermal motion, is estimated. For standard parameters, it can be very modest, e.g., in the range 20-200, which is in line with experimental findings on reversible clusterization on a liquid-air interface. © 2012 American Physical Society

Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2017-04-01

The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

Bias temperature instability in tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Mizubayashi, Wataru; Mori, Takahiro; Fukuda, Koichi; Ishikawa, Yuki; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Liu, Yongxun; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Matsukawa, Takashi; Masahara, Meishoku; Endo, Kazuhiko

2017-04-01

We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). The positive BTI and negative BTI mechanisms in TFETs are the same as those in metal-oxide-semiconductor FETs (MOSFETs). In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (V th) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. The BTI lifetime in n- and p-type TFETs is improved by applying a drain bias corresponding to the operation conditions.

Local condensate depletion at trap center under strong interactions

NASA Astrophysics Data System (ADS)

Yukalov, V. I.; Yukalova, E. P.

2018-04-01

Cold trapped Bose-condensed atoms, interacting via hard-sphere repulsive potentials are considered. Simple mean-field approximations show that the condensate distribution inside a harmonic trap always has the shape of a hump with the maximum condensate density occurring at the trap center. However, Monte Carlo simulations at high density and strong interactions display the condensate depletion at the trap center. The explanation of this effect of local condensate depletion at trap center is suggested in the frame of self-consistent theory of Bose-condensed systems. The depletion is shown to be due to the existence of the anomalous average that takes into account pair correlations and appears in systems with broken gauge symmetry.

Measuring the charge density of a tapered optical fiber using trapped microparticles.

PubMed

Kamitani, Kazuhiko; Muranaka, Takuya; Takashima, Hideaki; Fujiwara, Masazumi; Tanaka, Utako; Takeuchi, Shigeki; Urabe, Shinji

2016-03-07

We report the measurements of charge density of tapered optical fibers using charged particles confined in a linear Paul trap at ambient pressure. A tapered optical fiber is placed across the trap axis at a right angle, and polystyrene microparticles are trapped along the trap axis. The distance between the equilibrium position of a positively charged particle and the tapered fiber is used to estimate the amount of charge per unit length of the fiber without knowing the amount of charge of the trapped particle. The charge per unit length of a tapered fiber with a diameter of 1.6 μm was measured to be 2-1+3×10 -11 C/m.

Crystal growth and crystallography

NASA Technical Reports Server (NTRS)

Chernov, A. A.

1998-01-01

Selected topics that may be of interest for both crystal-structure and crystal-growth communities are overviewed. The growth of protein crystals, along with that of some other compounds, is one of the topics, and recent insights into related phenomena are considered as examples of applications of general principles. The relationship between crystal growth shape and structure is reviewed and an attempt to introduce semiquantitative characterization of binding for proteins is made. The concept of kinks for complex structures is briefly discussed. Even at sufficiently low supersaturations, the fluctuation of steps may not be sufficient to implement the Gibbs-Thomson law if the kink density is low enough. Subsurface ordering of liquids and growth of rough interfaces from melts is discussed. Crystals growing in microgravity from solution should be more perfect if they preferentially trap stress-inducing impurities, thus creating an impurity-depleted zone around themselves. Evidently, such a zone is developed only around the crystals growing in the absence of convection. Under terrestrial conditions, the self-purified depleted zone is destroyed by convection, the crystal traps more impurity and grows stressed. The stress relief causes mosaicity. In systems containing stress-inducing but poorly trapped impurities, the crystals grown in the absence of convection should be worse than those of their terrestrial counterparts.

An improved model to estimate trapping parameters in polymeric materials and its application on normal and aged low-density polyethylenes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Ning, E-mail: nl4g12@soton.ac.uk; He, Miao; Alghamdi, Hisham

2015-08-14

Trapping parameters can be considered as one of the important attributes to describe polymeric materials. In the present paper, a more accurate charge dynamics model has been developed, which takes account of charge dynamics in both volts-on and off stage into simulation. By fitting with measured charge data with the highest R-square value, trapping parameters together with injection barrier of both normal and aged low-density polyethylene samples were estimated using the improved model. The results show that, after long-term ageing process, the injection barriers of both electrons and holes is lowered, overall trap depth is shallower, and trap density becomesmore » much greater. Additionally, the changes in parameters for electrons are more sensitive than those of holes after ageing.« less

Femtosecond transient absorption spectroscopy of silanized silicon quantum dots

NASA Astrophysics Data System (ADS)

Kuntermann, Volker; Cimpean, Carla; Brehm, Georg; Sauer, Guido; Kryschi, Carola; Wiggers, Hartmut

2008-03-01

Excitonic properties of colloidal silicon quantum dots (Si qdots) with mean sizes of 4nm were examined using stationary and time-resolved optical spectroscopy. Chemically stable silicon oxide shells were prepared by controlled surface oxidation and silanization of HF-etched Si qdots. The ultrafast relaxation dynamics of photogenerated excitons in Si qdot colloids were studied on the picosecond time scale from 0.3psto2.3ns using femtosecond-resolved transient absorption spectroscopy. The time evolution of the transient absorption spectra of the Si qdots excited with a 150fs pump pulse at 390nm was observed to consist of decays of various absorption transitions of photoexcited electrons in the conduction band which overlap with both the photoluminescence and the photobleaching of the valence band population density. Gaussian deconvolution of the spectroscopic data allowed for disentangling various carrier relaxation processes involving electron-phonon and phonon-phonon scatterings or arising from surface-state trapping. The initial energy and momentum relaxation of hot carriers was observed to take place via scattering by optical phonons within 0.6ps . Exciton capturing by surface states forming shallow traps in the amorphous SiOx shell was found to occur with a time constant of 4ps , whereas deeper traps presumably localized in the Si-SiOx interface gave rise to exciton trapping processes with time constants of 110 and 180ps . Electron transfer from initially populated, higher-lying surface states to the conduction band of Si qdots (>2nm) was observed to take place within 400 or 700fs .

Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires

NASA Astrophysics Data System (ADS)

Becker, J.; Morkötter, S.; Treu, J.; Sonner, M.; Speckbacher, M.; Döblinger, M.; Abstreiter, G.; Finley, J. J.; Koblmüller, G.

2018-03-01

We explore the effects of random and short-period crystal-phase intermixing in InAs nanowires (NW) on the carrier trapping and thermal activation behavior using correlated optical and electrical transport spectroscopy. The polytypic InAs NWs are grown by catalyst-free molecular beam epitaxy under different temperatures, resulting in different fractions of wurtzite (WZ) and zincblende (ZB) and variable short-period (˜1-4 nm) WZ/ZB stacking sequences. Temperature-dependent microphotoluminescence (μ PL) studies reveal that variations in the WZ/ZB stacking govern the emission energy and carrier confinement properties. The optical transition energies are modeled for a wide range of WZ/ZB stacking sequences using a Kronig-Penney type effective mass approximation, while comparison with experimental results suggests that polarization sheet charges on the order of ˜0.0016-0.08 C/m along the WZ/ZB interfaces need to be considered to best describe the data. The thermal activation characteristics of carriers trapped inside the short-period WZ/ZB structure are directly reproduced in the temperature-dependent carrier density evolution (4-300 K) probed by four-terminal (4T) NW-field effect transistor measurements. In particular, we find that activation of carriers in-between ˜1016-1017c m-3 follows a two-step process, with activation at low temperature attributed to WZ/ZB traps and activation at high temperature being linked to surface states and electron accumulation at the InAs NW surface.

High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leontis, I.; Nassiopoulou, A. G., E-mail: A.Nassiopoulou@inn.demokritos.gr; Botzakaki, M. A.

2016-06-28

High capacitance density three-dimensional (3D) metal-insulator-semiconductor (MIS) capacitors using Si nanowires (SiNWs) by metal-assisted chemical etching and atomic-layer-deposited alumina dielectric film were fabricated and electrically characterized. A chemical treatment was used to remove structural defects from the nanowire surface, in order to reduce the density of interface traps at the Al{sub 2}O{sub 3}/SiNW interface. SiNWs with two different lengths, namely, 1.3 μm and 2.4 μm, were studied. A four-fold capacitance density increase compared to a planar reference capacitor was achieved with the 1.3 μm SiNWs. In the case of the 2.4 μm SiNWs this increase was ×7, reaching a value of 4.1 μF/cm{sup 2}. Capacitance-voltagemore » (C-V) measurements revealed that, following a two-cycle chemical treatment, frequency dispersion at accumulation regime and flat-band voltage shift disappeared in the case of the 1.3 μm SiNWs, which is indicative of effective removal of structural defects at the SiNW surface. In the case of the 2.4 μm SiNWs, frequency dispersion at accumulation persisted even after the two-step chemical treatment. This is attributed to a porous Si layer at the SiNW tops, which is not effectively removed by the chemical treatment. The electrical losses of MIS capacitors in both cases of SiNW lengths were studied and will be discussed.« less

Predicting infestation levels of the nantucket pine tip moth (Lepidoptera: Tortricidae) using pheromone traps

Treesearch

Christopher Asaro; C. Wayne Berisford

2001-01-01

There is considerable interest in using pheromone trap catches of the Nantucket pine tip moth, Rhyacionia frustrana (Conistock), to estimate or predict population density and damage. At six sites in the Georgia Piedmont, adult tip moths were monitored through one or more years using pheromone traps while population density and damage for each tip...

Do Organic Amendments Enhance the Nematode-Trapping Fungi Dactylellina haptotyla and Arthrobotrys oligospora?

PubMed

Jaffee, B A

2004-09-01

Soil cages (polyvinyl chloride pipe with mesh-covered ends) were used to determine how the quantity of two organic amendments affected the nematode-trapping fungi Dactylellina haptotyla and Arthrobotrys oligospora, which were studied independently in two different vineyards. Each cage contained 80 cm(3) of field soil (120 g dry weight equivalent), fungal inoculum (two alginate pellets, each weighing 1.9 mg and containing assimilative hyphae of one fungus), and dried grape or alfalfa leaves (0, 360, or 720 mg equivalent to 0, 4,500, or 9,000 kg/ha) with a C:N of 28:1 and 8:1, respectively. Cages were buried in the vineyards, recovered after 25 to 39 days, and returned to the laboratory where fungus population density and trapping were quantified. Dactylellina haptotyla population density and trapping were most enhanced by the smaller quantity of alfalfa amendment and were not enhanced by the larger quantity of alfalfa amendment. Arthrobotrys oligospora population density was most enhanced by the larger quantity of alfalfa amendment, but A. oligospora trapped few or no nematodes, regardless of amendment. Trapping and population density were correlated for D. haptotyla but not for A. oligospora.

Surface electroluminescence phenomena correlated with trapping parameters of insulating polymers

NASA Astrophysics Data System (ADS)

Zhang, Guan-Jun; Yang, Kai; Dong, Ming; Zhao, Wen-Bin; Yan, Zhang

2007-12-01

Electroluminescence (EL) phenomena are closely linked to the space charge and degradation in insulating polymers, and dominated by the luminescence and trap centers. EL emission has been promising in defining the onset of electrical aging and in the investigation of dissipation mechanisms. Generally, polymeric degradation reveals the increment of the density of luminescence and trap centers, so a fundamental study is proposed to correlate the EL emission of insulating polymers and their trapping parameters. A sensitive photon counting system is constructed to detect the weak EL. The time- and phase-resolved EL characteristics from different polymers (LDPE, PP and PTFE) are investigated with a planar electrode configuration under stepped ac voltage in vacuum. In succession, each sample is charged with exposing to multi-needle corona discharge, and then its surface potential decay is continuously recorded at a constant temperature. Based on the isothermal relaxation current theory, the energy level and density of both electron and hole trap distribution in the surface layer of each polymer is obtained. It is preliminarily concluded that EL phenomena are strongly affected by the trap properties, and for different polymers, its EL intensity is in direct contrast to its surface trap density, and this can be qualitatively explained by the trapping and detrapping sequence of charge carriers in trap centers with different energy level.

Effectiveness of differing trap types for the detection of emerald ash borer (Coleoptera: Buprestidae).

PubMed

Marshall, Jordan M; Storer, Andrew J; Fraser, Ivich; Beachy, Jessica A; Mastro, Victor C

2009-08-01

The early detection of populations of a forest pest is important to begin initial control efforts, minimizing the risk of further spread and impact. Emerald ash borer (Agrilus planipennis Fairmaire) is an introduced pestiferous insect of ash (Fraxinus spp. L.) in North America. The effectiveness of trapping techniques, including girdled trap trees with sticky bands and purple prism traps, was tested in areas with low- and high-density populations of emerald ash borer. At both densities, large girdled trap trees (>30 cm diameter at breast height [dbh], 1.37 m in height) captured a higher rate of adult beetles per day than smaller trees. However, the odds of detecting emerald ash borer increased as the dbh of the tree increased by 1 cm for trap trees 15-25 cm dbh. Ash species used for the traps differed in the number of larvae per cubic centimeter of phloem. Emerald ash borer larvae were more likely to be detected below, compared with above, the crown base of the trap tree. While larval densities within a trap tree were related to the species of ash, adult capture rates were not. These results provide support for focusing state and regional detection programs on the detection of emerald ash borer adults. If bark peeling for larvae is incorporated into these programs, peeling efforts focused below the crown base may increase likelihood of identifying new infestations while reducing labor costs. Associating traps with larger trees ( approximately 25 cm dbh) may increase the odds of detecting low-density populations of emerald ash borer, possibly reducing the time between infestation establishment and implementing management strategies.

Disulfide Trapping for Modeling and Structure Determination of Receptor: Chemokine Complexes.

PubMed

Kufareva, Irina; Gustavsson, Martin; Holden, Lauren G; Qin, Ling; Zheng, Yi; Handel, Tracy M

2016-01-01

Despite the recent breakthrough advances in GPCR crystallography, structure determination of protein-protein complexes involving chemokine receptors and their endogenous chemokine ligands remains challenging. Here, we describe disulfide trapping, a methodology for generating irreversible covalent binary protein complexes from unbound protein partners by introducing two cysteine residues, one per interaction partner, at selected positions within their interaction interface. Disulfide trapping can serve at least two distinct purposes: (i) stabilization of the complex to assist structural studies and/or (ii) determination of pairwise residue proximities to guide molecular modeling. Methods for characterization of disulfide-trapped complexes are described and evaluated in terms of throughput, sensitivity, and specificity toward the most energetically favorable crosslinks. Due to abundance of native disulfide bonds at receptor:chemokine interfaces, disulfide trapping of their complexes can be associated with intramolecular disulfide shuffling and result in misfolding of the component proteins; because of this, evidence from several experiments is typically needed to firmly establish a positive disulfide crosslink. An optimal pipeline that maximizes throughput and minimizes time and costs by early triage of unsuccessful candidate constructs is proposed. © 2016 Elsevier Inc. All rights reserved.

Optical characterization of wide-gap detector-grade semiconductors

NASA Astrophysics Data System (ADS)

Elshazly, Ezzat S.

Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd1-xZnxTe, x˜0.1) and Thallium Bromide (TlBr), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and TlBr as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064nm wavelength and 7ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300K to 110K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (TlBr) and compared with the results for cadmium zinc telluride (CZT) in a temperature range from 300K to 110K. The experimental data was analyzed using a trapping model. In CZT, because the majority carrier concentration is close to the intrinsic carrier concentration, the trapping time increases exponentially as the temperature decreases below about 160K. While, in TlBr, the majority carrier concentration is many orders of magnitude greater than the intrinsic carrier concentration and the trapping time followed a 1T temperature dependence over the range of temperatures studied. The results of the model suggest that a moderately deep compensation center, located approximately 200 meV from the middle of the bandgap, could be used to significantly increase the room temperature trapping time in TlBr. The results of this model demonstrate that the room temperature trapping time in TlBr can, in principle, approach 0.1ms through the introduction of a moderately deep compensation level but without decreasing the overall trap concentration. This strategy is not possible in CZT, because the band gap is too small to use a moderately deep compensation level while still maintaining high material resistivity. Carrier trapping times were measured in three polycrystalline TlBr samples produced by melting commercial TlBr beads in a sealed quartz ampoule for two hours at three different temperatures near the melting point. The trapping time decreased with increasing melting temperature, presumably due to the thermal generation of a trap state.

Evaluation of pseudostem trapping as a control measure against banana weevil, Cosmopolites sordidus (Coleoptera: Curculionidae) in Uganda.

PubMed

Gold, C S; Gold, C S; Okech, S H; Nokoe, S

2002-02-01

Controlled studies to determine the efficacy of pseudostem trapping in reducing adult populations of the banana weevil, Cosmopolites sordidus (Germar), were conducted under farmer conditions in Ntungamo district, Uganda. Twenty-seven farms were stratified on the basis of C. sordidus population density (estimated by mark and recapture methods) and divided among three treatments: (i) researcher-managed trapping (one trap per mat per month): (ii) farmer-managed trapping (trap intensity at discretion of farmer); and (iii) controls (no trapping). Intensive trapping (managed by researchers) resulted in significantly lower C. sordidus damage after one year. Over the same period, C. sordidus numbers declined by 61% on farms where trapping was managed by researchers, 53% where farmers managed trapping and 38% on farms without trapping; however, results varied greatly among farms and, overall, there was no significant effect of trapping on C. sordidus numbers. Moreover, there was only a weak relationship between the number of C. sordidus removed and the change in population density. Trapping success appeared to be affected by management levels and immigration from neighbouring farms. Although farmers were convinced that trapping was beneficial, adoption has been low due to resource requirements.

Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3

NASA Astrophysics Data System (ADS)

Lopez, Melinda; Salvo, Christopher; Tsui, Stephen

2012-02-01

Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

Passivation and Depassivation of Defects in Graphene-based field-effect transistors

NASA Astrophysics Data System (ADS)

O'Hara, Andrew; Wang, Pan; Perini, Chris J.; Fleetwood, Daniel M.; Vogel, Eric M.; Pantelides, Sokrates T.

Field effect transistors based on graphene on amorphous SiO2 substrates were fabricated, both with and without a top oxide passivation layer of Al2O3. Initial I-V characteristics of these devices show that the Fermi energy occurs below the Dirac point in graphene (i.e. p-type behavior). Introduction of environmental stresses, e.g. baking the devices, causes a shift in the Fermi energy relative to the Dirac point. 1/f noise measurements indicate the presence of charge trapping defects. In order to find the origins of this behavior, we construct atomistic models of the substrate/graphene interface and the graphene/oxide passivation layer interface. Using density functional theory, we investigate the role that the introduction and removal of hydrogen and hydroxide passivants has on the electronic structure of the graphene layer as well as the relative energetics for these processes to occur in order to gain insights into the experimental results. Supported by DTRA: 1-16-0032 and NSF: ECCS-1508898.

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

NASA Astrophysics Data System (ADS)

García, H.; González, M. B.; Mallol, M. M.; Castán, H.; Dueñas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigón, A.

2018-04-01

The γ-radiation effects on the electrical characteristics of metal-insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration.

PubMed

Rehman, Atteq Ur; Khan, Muhammad Farooq; Shehzad, Muhammad Arslan; Hussain, Sajjad; Bhopal, Muhammad Fahad; Lee, Sang Hee; Eom, Jonghwa; Seo, Yongho; Jung, Jongwan; Lee, Soo Hong

2016-11-02

Molybdenum disulfide (MoS 2 ) has recently emerged as a promising candidate for fabricating ultrathin-film photovoltaic devices. These devices exhibit excellent photovoltaic performance, superior flexibility, and low production cost. Layered MoS 2 deposited on p-Si establishes a built-in electric field at MoS 2 /Si interface that helps in photogenerated carrier separation for photovoltaic operation. We propose an Al 2 O 3 -based passivation at the MoS 2 surface to improve the photovoltaic performance of bulklike MoS 2 /Si solar cells. Interestingly, it was observed that Al 2 O 3 passivation enhances the built-in field by reduction of interface trap density at surface. Our device exhibits an improved power conversion efficiency (PCE) of 5.6%, which to our knowledge is the highest efficiency among all bulklike MoS 2 -based photovoltaic cells. The demonstrated results hold the promise for integration of bulklike MoS 2 films with Si-based electronics to develop highly efficient photovoltaic cells.

Managing the horn fly (Diptera: Muscidae) using an electric walk-through fly trap.

PubMed

Watson, D W; Stringham, S M; Denning, S S; Washburn, S P; Poore, M H; Meier, A

2002-10-01

An electric walk-through fly trap was evaluated for the management of the horn fly, Hematobia irritans (L.), on dairy cattle in North Carolina over 2 yr. The trap relies on black lights and electrocution grids to attract and kill flies that are brushed from the cattle passing through. During the first season, horn fly densities were reduced from >1,400 to <200 flies per animal. Horn fly density averaged 269.2 +/- 25.8 on cattle using the walk-through fly trap twice daily, and 400.2 +/- 43.5 on the control group during the first year. The second year, seasonal mean horn fly density was 177.3 +/- 10.8 on cattle using the walk-through fly trap compared with 321.1 +/- 15.8 on the control group. No insecticides were used to control horn flies during this 2-yr study.

Time-resolved electric force microscopy of charge traps in polycrystalline pentacene films

NASA Astrophysics Data System (ADS)

Jaquith, Michael; Muller, Erik; Marohn, John

2006-03-01

The microscopic mechanisms by which charges trap in organic electronic materials are poorly understood. Muller and Marohn recently showed that electric force microscopy (EFM) can be used to image trapped charge in working pentacene thin-film transistors [E. M. Muller et al, Adv. Mater. 17 1410 (2005)]. We have extended their work by imaging trapped charge in pentacene films with much larger grains. In contrast to the previous study in which charge was found to trap inhomogeneously throughout the transistor gap, we find microscopic evidence for a new trapping mechanism in which charges trap predominantly at the pentacene/metal interface in large-grained devices. We have also made localized measurements of the trap growth over time by performing pulsed-gate EFM experiments. Integrated-rate kinetics data supports a charge trap mechanism which is second order in holes, e.g., holes trap in pairs, although the charge-trapping rate appears to depend on gate voltage.

Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor.

PubMed

Park, Hyun-Woo; Song, Aeran; Choi, Dukhyun; Kim, Hyung-Jun; Kwon, Jang-Yeon; Chung, Kwun-Bum

2017-09-14

Tungsten-indium-zinc-oxide thin-film transistors (WIZO-TFTs) were fabricated using a radio frequency (RF) co-sputtering system with two types of source/drain (S/D)-electrode material of conducting WIZO (homojunction structure) and the indium-tin oxide (ITO) (heterojunction structure) on the same WIZO active-channel layer. The electrical properties of the WIZO layers used in the S/D electrode and the active-channel layer were adjusted through oxygen partial pressure during the deposition process. To explain enhancements of the device performance and stability of the homojunction-structured WIZO-TFT, a systematic investigation of correlation between device performance and physical properties at the interface between the active layer and the S/D electrodes such as the contact resistance, surface/interfacial roughness, interfacial-trap density, and interfacial energy-level alignments was conducted. The homojunction-structured WIZO-TFT exhibited a lower contact resistance, smaller interfacial-trap density, and flatter interfacial roughness than the WIZO-TFT with the heterojunction structure. The 0.09 eV electron barrier of the homojunction-structured WIZO-TFT is lower than the 0.21 eV value that was obtained for the heterojunction-structured WIZO-TFT. This reduced electron barrier may be attributed to enhancements of device performance and stability, that are related to the carrier transport.

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

NASA Astrophysics Data System (ADS)

Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

2018-06-01

The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

Hydrophobic Polystyrene Passivation Layer for Simultaneously Improved Efficiency and Stability in Perovskite Solar Cells.

PubMed

Li, Minghua; Yan, Xiaoqin; Kang, Zhuo; Huan, Yahuan; Li, Yong; Zhang, Ruxiao; Zhang, Yue

2018-06-06

The major restraint for the commercialization of the high-performance hybrid metal halide perovskite solar cells is the long-term stability, especially at the infirm interface between the perovskite film and organic charge-transfer layer. Recently, engineering the interface between the perovskite and spiro-OMeTAD becomes an effective strategy to simultaneously improve the efficiency and stability in the perovskite solar cells. In this work, we demonstrated that introducing an interfacial polystyrene layer between the perovskite film and spiro-OMeTAD layer can effectively improve the perovskite solar cells photovoltaic performance. The inserted polystyrene layer can passivate the interface traps and defects effectively and decrease the nonradiative recombination, leading to enhanced photoluminescence intensity and carrier lifetime, without compromising the carrier extraction and transfer. Under the optimized condition, the perovskite solar cells with the polystyrene layer achieve an enhanced average power efficiency of about 19.61% (20.46% of the best efficiency) from about 17.63% with negligible current density-voltage hysteresis. Moreover, the optimized perovskite solar cells with the hydrophobic polystyrene layer can maintain about 85% initial efficiency after 2 months storage in open air conditions without encapsulation.

Formation of He-Rich Layers Observed by Neutron Reflectometry in the He-Ion-Irradiated Cr/W Multilayers: Effects of Cr/W Interfaces on the He-Trapping Behavior.

PubMed

Chen, Feida; Tang, Xiaobin; Huang, Hai; Li, Xinxi; Wang, Yan; Huang, Chaoqiang; Liu, Jian; Li, Huan; Chen, Da

2016-09-21

Cr/W multilayer nanocomposites were presented in the paper as potential candidate materials for the plasma facing components in fusion reactors. We used neutron reflectometry to measure the depth profile of helium in the multienergy He ions irradiated [Cr/W (50 nm)]3 multilayers. Results showed that He-rich layers with low neutron scattering potential energy form at the Cr/W interfaces, which is in great agreement with previous modeling results of other multilayers. This phenomenon provided a strong evidence for the He trapping effects of Cr/W interfaces and implied the possibility of using the Cr/W multilayer nanocomposites as great He-tolerant plasma facing materials.

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Liu, L.; Xu, J. P.; Ji, F.; Chen, J. X.; Lai, P. T.

2012-07-01

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH3-annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO2 interface.

Maximizing Information Yield From Pheromone-Baited Monitoring Traps: Estimating Plume Reach, Trapping Radius, and Absolute Density of Cydia pomonella (Lepidoptera: Tortricidae) in Michigan Apple

PubMed Central

Adams, C. G.; Schenker, J. H.; McGhee, P. S.; Gut, L. J.; Brunner, J. F.

2017-01-01

Abstract Novel methods of data analysis were used to interpret codling moth (Cydia pomonella) catch data from central-trap, multiple-release experiments using a standard codlemone-baited monitoring trap in commercial apple orchards not under mating disruption. The main objectives were to determine consistency and reliability for measures of: 1) the trapping radius, composed of the trap’s behaviorally effective plume reach and the maximum dispersive distance of a responder population; and 2) the proportion of the population present in the trapping area that is caught. Two moth release designs were used: 1) moth releases at regular intervals in the four cardinal directions, and 2) evenly distributed moth releases across entire approximately 18-ha orchard blocks using both high and low codling moth populations. For both release designs, at high populations, the mean proportion catch was 0.01, and for the even release of low populations, that value was approximately 0.02. Mean maximum dispersive distance for released codling moth males was approximately 260 m. Behaviorally effective plume reach for the standard codling moth trap was < 5 m, and total trapping area for a single trap was approximately 21 ha. These estimates were consistent across three growing seasons and are supported by extraordinarily high replication for this type of field experiment. Knowing the trapping area and mean proportion caught, catch number per single monitoring trap can be translated into absolute pest density using the equation: males per trapping area = catch per trapping area/proportion caught. Thus, catches of 1, 3, 10, and 30 codling moth males per trap translate to approximately 5, 14, 48, and 143 males/ha, respectively, and reflect equal densities of females, because the codling moth sex ratio is 1:1. Combined with life-table data on codling moth fecundity and mortality, along with data on crop yield per trapping area, this fundamental knowledge of how to interpret catch numbers will enable pest managers to make considerably more precise projections of damage and therefore more precise and reliable decisions on whether insecticide applications are justified. The principles and methods established here for estimating absolute codling moth density may be broadly applicable to pests generally and thereby could set a new standard for integrated pest management decisions based on trapping. PMID:28131989

Comparative evaluation of four mosquitoes sampling methods in rice irrigation schemes of lower Moshi, northern Tanzania.

PubMed

Kweka, Eliningaya J; Mahande, Aneth M

2009-07-06

Adult malaria vector sampling is the most important parameter for setting up an intervention and understanding disease dynamics in malaria endemic areas. The intervention will ideally be species-specific according to sampling output. It was the objective of this study to evaluate four sampling techniques, namely human landing catch, pit shelter, indoor resting collection and odour-baited entry trap. These four sampling methods were evaluated simultaneously for thirty days during October 2008, a season of low mosquitoes density and malaria transmission. These trapping methods were performed in one village for maximizing homogeneity in mosquito density. The cattle and man used in odour-baited entry trap were rotated between the chambers to avoid bias. A total of 3,074 mosquitoes were collected. Among these 1,780 (57.9%) were Anopheles arabiensis and 1,294 (42.1%) were Culex quinquefasciatus. Each trap sampled different number of mosquitoes, Indoor resting collection collected 335 (10.9%), Odour-baited entry trap-cow 1,404 (45.7%), Odour-baited entry trap-human 378 (12.3%), Pit shelter 562 (18.3%) and HLC 395 (12.8%). General linear model univariate analysis method was used, position of the trapping method had no effect on mosquito density catch (DF = 4, F = 35.596, P = 0.78). Days variation had no effect on the collected density too (DF = 29, F = 4.789, P = 0.09). The sampling techniques had significant impact on the caught mosquito densities (DF = 4, F = 34.636, P < 0.0001). The Wilcoxon pair-wise comparison between mosquitoes collected in human landing catch and pit shelter was significant (Z = -3.849, P < 0.0001), human landing catch versus Indoor resting collection was not significant (Z = -0.502, P = 0.615), human landing catch versus odour-baited entry trap-man was significant (Z = -2.687, P = 0.007), human landing catch versus odour-baited entry trap-cow was significant (Z = -3.127, P = 0.002). Odour-baited traps with different baits and pit shelter have shown high productivity in collecting higher densities of mosquitoes than human landing catch. These abilities are the possibilities of replacing the human landing catch practices for sampling malaria vectors in areas with An. arabiensis as malaria vectors. Further evaluations of these sampling methods need to be investigated is other areas with different species.

Direct sampling during multiple sediment density flows reveals dynamic sediment transport and depositional environment in Monterey submarine canyon

NASA Astrophysics Data System (ADS)

Maier, K. L.; Gales, J. A.; Paull, C. K.; Gwiazda, R.; Rosenberger, K. J.; McGann, M.; Lundsten, E. M.; Anderson, K.; Talling, P.; Xu, J.; Parsons, D. R.; Barry, J.; Simmons, S.; Clare, M. A.; Carvajal, C.; Wolfson-Schwehr, M.; Sumner, E.; Cartigny, M.

2017-12-01

Sediment density flows were directly sampled with a coupled sediment trap-ADCP-instrument mooring array to evaluate the character and frequency of turbidity current events through Monterey Canyon, offshore California. This novel experiment aimed to provide links between globally significant sediment density flow processes and their resulting deposits. Eight to ten Anderson sediment traps were repeatedly deployed at 10 to 300 meters above the seafloor on six moorings anchored at 290 to 1850 meters water depth in the Monterey Canyon axial channel during 6-month deployments (October 2015 - April 2017). Anderson sediment traps include a funnel and intervalometer (discs released at set time intervals) above a meter-long tube, which preserves fine-scale stratigraphy and chronology. Photographs, multi-sensor logs, CT scans, and grain size analyses reveal layers from multiple sediment density flow events that carried sediment ranging from fine sand to granules. More sediment accumulation from sediment density flows, and from between flows, occurred in the upper canyon ( 300 - 800 m water depth) compared to the lower canyon ( 1300 - 1850 m water depth). Sediment accumulated in the traps during sediment density flows is sandy and becomes finer down-canyon. In the lower canyon where sediment directly sampled from density flows are clearly distinguished within the trap tubes, sands have sharp basal contacts, normal grading, and muddy tops that exhibit late-stage pulses. In at least two of the sediment density flows, the simultaneous low velocity and high backscatter measured by the ADCPs suggest that the trap only captured the collapsing end of a sediment density flow event. In the upper canyon, accumulation between sediment density flow events is twice as fast compared to the lower canyon; it is characterized by sub-cm-scale layers in muddy sediment that appear to have accumulated with daily to sub-daily frequency, likely related to known internal tidal dynamics also measured in the experiment. The comprehensive scale of the Monterey Coordinated Canyon Experiment allows us to integrate sediment traps with ADCP instrument data and seafloor core samples, which provides important new data to constrain how, when, and what sediment is transported through submarine canyons and how this is archived in seafloor deposits.

A Non-Neutral Plasma Device: Electron Beam Penning Trap

NASA Astrophysics Data System (ADS)

Zhuang, Ge; Liu, Wan-dong; Zheng, Jian; Fu, Cheng-jiang; Bai, Bo; Chi, Ji; Zhao, Kai; Xie, Jin-lin; Liang, Xiao-ping; Yu, Chang-xuan

1999-12-01

An electron beam Penning trap (EBPT) non- neutral plasma system, built to investigate the formation of a dense electron core with the density beyond Brillouin limit and possible application to fusion research, has been described. The density in the center of the EBPT has been verified to be up to 10 times of Brillouin density limit.

The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

NASA Astrophysics Data System (ADS)

Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

2017-12-01

In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

Interfacial charge-induced polarization switching in Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} bi-layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yu Jin; Park, Min Hyuk; Jeon, Woojin

2015-12-14

Detailed polarization switching behavior of an Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} (AO/PZT) structure is examined by comparing the phenomenological thermodynamic model to the experimental polarization–voltage (P-V) results. Amorphous AO films with various thicknesses (2–10 nm) were deposited on the polycrystalline 150-nm-thick PZT film. The thermodynamic calculation showed that the transition from the ferroelectric-like state to the paraelectric-like state with increasing AO thickness occurs at ∼3 nm thickness. This paraelectric-like state should have exhibited a negative capacitance effect without permanent polarization switching if no other adverse effects are involved. However, experiments showed typical ferroelectric-like hysteresis loops where the coercive voltage increased with the increasingmore » AO thickness, which could be explained by the carrier injection through the thin AO layer and trapping of the carriers at the AO/PZT interface. The fitting of the experimental P-V loops using the thermodynamic model considering the depolarization energy effect showed that trapped charge density was ∼±0.1 Cm{sup −2} and critical electric field at the Pt electrode/AO interface, at which the carrier transport occurs, was ∼±10 MV/cm irrespective of the AO thickness. Energy band model at each electrostatic state along the P-V loop was provided to elucidate correlation between macroscopic polarization and internal charge state of the stacked films.« less

Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics

NASA Astrophysics Data System (ADS)

Wang, Hongyue; Wang, Jinyan; Liu, Jingqian; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang

2018-03-01

Based on the self-terminating gate recess technique, two different processes featuring gate-recess-first (GF) and ohmic-contact-first (OF) were proposed for E-mode Al2O3/GaN MOSFETs. Increased maximum drain current (Idmax) ∼30% (420 vs 325 mA/mm), field-effect mobility (μFEmax) ∼67% (150 vs 90 cm2/Vs) and reduced on-state resistance (Ron) ∼42% (9.7 vs 16.8 Ω·mm) were observed in the devices fabricated by GF process. Such significant performance difference of GF- and OF-devices resulted from the presence of border traps at Al2O3/GaN interface with a time constant ∼7 × 10-6 s. Experimental results indicated that: (1) the near interface border traps in Al2O3 dielectric significantly affect device channel mobility; (2) a high temperature post-deposition annealing process could effective suppress generation of border traps.

Miniaturized magnet-less RF electron trap. II. Experimental verification

DOE PAGES

Deng, Shiyang; Green, Scott R.; Markosyan, Aram H.; ...

2017-06-15

Atomic microsystems have the potential of providing extremely accurate measurements of timing and acceleration. But, atomic microsystems require active maintenance of ultrahigh vacuum in order to have reasonable operating lifetimes and are particularly sensitive to magnetic fields that are used to trap electrons in traditional sputter ion pumps. Our paper presents an approach to trapping electrons without the use of magnetic fields, using radio frequency (RF) fields established between two perforated electrodes. The challenges associated with this magnet-less approach, as well as the miniaturization of the structure, are addressed. These include, for example, the transfer of large voltage (100–200 V)more » RF power to capacitive loads presented by the structure. The electron trapping module (ETM) described here uses eight electrode elements to confine and measure electrons injected by an electron beam, within an active trap volume of 0.7 cm 3. The operating RF frequency is 143.6 MHz, which is the measured series resonant frequency between the two RF electrodes. It was found experimentally that the steady state electrode potentials on electrodes near the trap became more negative after applying a range of RF power levels (up to 0.15 W through the ETM), indicating electron densities of ≈3 × 10 5 cm -3 near the walls of the trap. The observed results align well with predicted electron densities from analytical and numerical models. The peak electron density within the trap is estimated as ~1000 times the electron density in the electron beam as it exits the electron gun. Finally, this successful demonstration of the RF electron trapping concept addresses critical challenges in the development of miniaturized magnet-less ion pumps.« less

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO x /Al2O3 gate dielectrics

NASA Astrophysics Data System (ADS)

Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

2016-06-01

Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal-oxide-semiconductor field-effect-transistors (MOSFETs) with GeO x /Al2O3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8-20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al2O3 gate stacks are evaluated experimentally. The bulk charges in Al2O3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  1012 cm-2 at the GeO x /Ge interface and  -2.3  ×  1012 cm-2 at the Al2O3/GeO x interface. The electric dipole at the Al2O3/GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  1013 cm-2. The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al2O3/GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al2O3/GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement.

Comparison of sampling methodologies and estimation of population parameters for a temporary fish ectoparasite.

PubMed

Artim, J M; Sikkel, P C

2016-08-01

Characterizing spatio-temporal variation in the density of organisms in a community is a crucial part of ecological study. However, doing so for small, motile, cryptic species presents multiple challenges, especially where multiple life history stages are involved. Gnathiid isopods are ecologically important marine ectoparasites, micropredators that live in substrate for most of their lives, emerging only once during each juvenile stage to feed on fish blood. Many gnathiid species are nocturnal and most have distinct substrate preferences. Studies of gnathiid use of habitat, exploitation of hosts, and population dynamics have used various trap designs to estimate rates of gnathiid emergence, study sensory ecology, and identify host susceptibility. In the studies reported here, we compare and contrast the performance of emergence, fish-baited and light trap designs, outline the key features of these traps, and determine some life cycle parameters derived from trap counts for the Eastern Caribbean coral-reef gnathiid, Gnathia marleyi. We also used counts from large emergence traps and light traps to estimate additional life cycle parameters, emergence rates, and total gnathiid density on substrate, and to calibrate the light trap design to provide estimates of rate of emergence and total gnathiid density in habitat not amenable to emergence trap deployment.

Ice growth from supercooled aqueous solutions of benzene, naphthalene, and phenanthrene.

PubMed

Liyana-Arachchi, Thilanga P; Valsaraj, Kalliat T; Hung, Francisco R

2012-08-23

Classical molecular dynamics (MD) were performed to investigate the growth of ice from supercooled aqueous solutions of benzene, naphthalene, or phenanthrene. The main objective of this study is to explore the fate of those aromatic molecules after freezing of the supercooled aqueous solutions, i.e., if these molecules become trapped inside the ice lattice or if they are displaced to the QLL or to the interface with air. Ice growth from supercooled aqueous solutions of benzene, naphthalene, or phenanthrene result in the formation of quasi-liquid layers (QLLs) at the air/ice interface that are thicker than those observed when pure supercooled water freezes. Naphthalene and phenanthrene molecules in the supercooled aqueous solutions are displaced to the air/ice interface during the freezing process at both 270 and 260 K; no incorporation of these aromatics into the ice lattice is observed throughout the freezing process. Similar trends were observed during freezing of supercooled aqueous solutions of benzene at 270 K. In contrast, a fraction of the benzene molecules become trapped inside the ice lattice during the freezing process at 260 K, with the rest of the benzene molecules being displaced to the air/ice interface. These results suggest that the size of the aromatic molecule in the supercooled aqueous solution is an important parameter in determining whether these molecules become trapped inside the ice crystals. Finally, we also report potential of mean force (PMF) calculations aimed at studying the adsorption of gas-phase benzene and phenanthrene on atmospheric air/ice interfaces. Our PMF calculations indicate the presence of deep free energy minima for both benzene and phenanthrene at the air/ice interface, with these molecules adopting a flat orientation at the air/ice interface.

Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang L.; Batlogg, Bertram

2010-01-01

The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected field-effect conductivity. Several analytical methods to calculate the trap DOS from the measured data were used to clarify, if the different methods lead to comparable results. We also used computer simulations to further test the results from the analytical methods. Most methods predict a trap DOS close to the valence-band edge that can be very well approximated by a single exponential function with a slope in the range of 50-60 meV and a trap density at the valence-band edge of ≈2×1021eV-1cm-3 . Interestingly, the trap DOS is always slightly steeper than exponential. An important finding is that the choice of the method to calculate the trap DOS from the measured data can have a considerable effect on the final result. We identify two specific simplifying assumptions that lead to significant errors in the trap DOS. The temperature dependence of the band mobility should generally not be neglected. Moreover, the assumption of a constant effective accumulation-layer thickness leads to a significant underestimation of the slope of the trap DOS.

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

NASA Astrophysics Data System (ADS)

Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

2016-05-01

Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states.

PubMed

Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

2016-05-27

Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

Superfluid transition of homogeneous and trapped two-dimensional Bose gases.

PubMed

Holzmann, Markus; Baym, Gordon; Blaizot, Jean-Paul; Laloë, Franck

2007-01-30

Current experiments on atomic gases in highly anisotropic traps present the opportunity to study in detail the low temperature phases of two-dimensional inhomogeneous systems. Although, in an ideal gas, the trapping potential favors Bose-Einstein condensation at finite temperature, interactions tend to destabilize the condensate, leading to a superfluid Kosterlitz-Thouless-Berezinskii phase with a finite superfluid mass density but no long-range order, as in homogeneous fluids. The transition in homogeneous systems is conveniently described in terms of dissociation of topological defects (vortex-antivortex pairs). However, trapped two-dimensional gases are more directly approached by generalizing the microscopic theory of the homogeneous gas. In this paper, we first derive, via a diagrammatic expansion, the scaling structure near the phase transition in a homogeneous system, and then study the effects of a trapping potential in the local density approximation. We find that a weakly interacting trapped gas undergoes a Kosterlitz-Thouless-Berezinskii transition from the normal state at a temperature slightly below the Bose-Einstein transition temperature of the ideal gas. The characteristic finite superfluid mass density of a homogeneous system just below the transition becomes strongly suppressed in a trapped gas.

Interface traps contribution on transport mechanisms under illumination in metal-oxide-semiconductor structures based on silicon nanocrystals

NASA Astrophysics Data System (ADS)

Chatbouri, S.; Troudi, M.; Kalboussi, A.; Souifi, A.

2018-02-01

The transport phenomena in metal-oxide-semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer have been investigated, in dark condition and under visible illumination. At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs). And a single peak appears at low temperature only for MOS with Si-NCs related to Si-NCs DLTS response. In dark condition, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap states for MOS without Si-NCs. The tunneling of charge carriers from highly poly-Si to Si substrate trough the trapping/detrapping mechanism in the Si-NCs, at low temperature, contributed to the conduction mechanism for MOS with Si-NCs. The light effect on transport mechanisms has been investigated using current-voltage ( I- V), and high frequency capacitance-voltage ( C- V) methods. We have been marked the photoactive trap effect in inversion zone at room temperature in I- V characteristics, which confirm the contribution of photo-generated charge on the transport mechanisms from highly poly-Si to Si substrate trough the photo-trapping/detrapping mechanism in the Si-NCs and interfaces traps levels. These results have been confirmed by an increasing about 10 pF in capacity's values for the C- V characteristics of MOS with Si-NCs, in the inversion region for inverse high voltage applied under photoexcitation at low temperature. These results are helpful to understand the principle of charge transport in dark condition and under illumination, of MOS structures having Si-NCs in the SiO x = 1.5 oxide matrix.

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, T., E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, N.; Osada, T.

2014-07-21

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap ofmore » less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.« less

Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yi-Yan; Yang, Chun-Chieh

2012-03-01

This study applies CF4 plasma pretreatment to a buffer oxide layer to improve the performance of low-temperature polysilicon thin-film transistors (LTPS TFTs). Results show that the fluorine atoms piled up at the interface between the bulk channel and buffer oxide layer and accumulated in the bulk channel. The reduction of the trap states density by fluorine passivation can improve the electrical characteristics of the LTPS TFTs. It is found that the threshold voltage reduced from 4.32 to 3.03 V and the field-effect mobility increased from 29.71 to 45.65 cm2 V-1 S-1. In addition, the on current degradation and threshold voltage shift after stressing were significantly improved about 31% and 70%, respectively. We believe that the proposed CF4 plasma pretreatment on the buffer oxide layer can passivate the trap states and avoid the plasma induced damage on the polysilicon channel surface, resulting in the improvement in performance and reliability for LTPS-TFT mass production application on AMOLED displays with critical reliability requirement.

Observation of Diamond Nitrogen-Vacancy Center Photoluminescence under High Vacuum in a Magneto-Gravitational Trap

NASA Astrophysics Data System (ADS)

Ji, Peng; Hsu, Jen-Feng; Lewandowski, Charles W.; Dutt, M. V. Gurudev; D'Urso, Brian

2016-05-01

We report the observation of photoluminescence from nitrogen-vacancy (NV) centers in diamond nanocrystals levitated in a magneto-gravitational trap. The trap utilizes a combination of strong magnetic field gradients and gravity to confine diamagnetic particles in three dimensions. The well-characterized NV centers in trapped diamond nanocrystals provide an ideal built-in sensor to measure the trap magnetic field and the temperature of the trapped diamond nanocrystal. In the future, the NV center spin state could be coupled to the mechanical motion through magnetic field gradients, enabling in an ideal quantum interface between NV center spin and the mechanical motion. National Science Foundation, Grant No. 1540879.

Radio Frequency Magneto-Optical Trapping of CaF with High Density.

PubMed

Anderegg, Loïc; Augenbraun, Benjamin L; Chae, Eunmi; Hemmerling, Boerge; Hutzler, Nicholas R; Ravi, Aakash; Collopy, Alejandra; Ye, Jun; Ketterle, Wolfgang; Doyle, John M

2017-09-08

We demonstrate significantly improved magneto-optical trapping of molecules using a very slow cryogenic beam source and either rf modulated or dc magnetic fields. The rf magneto-optical trap (MOT) confines 1.0(3)×10^{5} CaF molecules at a density of 7(3)×10^{6}  cm^{-3}, which is an order of magnitude greater than previous molecular MOTs. Near Doppler-limited temperatures of 340(20)  μK are attained. The achieved density enables future work to directly load optical tweezers and create optical arrays for quantum simulation.

A temperature dependent study on charge dynamics in organic molecular device: Effect of shallow traps on space charge limited behavior

NASA Astrophysics Data System (ADS)

Mukherjee, A. K.; Kavala, A. K.

2014-04-01

Shallow traps play a significant role in influencing charge dynamics through organic molecular thin films, such as pentacene. Sandwich cells of pentacene capped by gold electrodes are an excellent specimen to study the nature of underlying charge dynamics. In this paper, self-consistent numerical simulation of I-V characteristics is performed at various temperatures. The results have revealed negative value of Poole Frenkel coefficient. The location of trap energy level is found to be located at 0.24 eV above the highest occupied molecular orbit (HOMO) level of pentacene. Other physical parameters related to trap levels, such as density of states due to traps and effective carrier density due to traps, have also been estimated in this study.

Hybrid asymptotic-numerical approach for estimating first-passage-time densities of the two-dimensional narrow capture problem.

PubMed

Lindsay, A E; Spoonmore, R T; Tzou, J C

2016-10-01

A hybrid asymptotic-numerical method is presented for obtaining an asymptotic estimate for the full probability distribution of capture times of a random walker by multiple small traps located inside a bounded two-dimensional domain with a reflecting boundary. As motivation for this study, we calculate the variance in the capture time of a random walker by a single interior trap and determine this quantity to be comparable in magnitude to the mean. This implies that the mean is not necessarily reflective of typical capture times and that the full density must be determined. To solve the underlying diffusion equation, the method of Laplace transforms is used to obtain an elliptic problem of modified Helmholtz type. In the limit of vanishing trap sizes, each trap is represented as a Dirac point source that permits the solution of the transform equation to be represented as a superposition of Helmholtz Green's functions. Using this solution, we construct asymptotic short-time solutions of the first-passage-time density, which captures peaks associated with rapid capture by the absorbing traps. When numerical evaluation of the Helmholtz Green's function is employed followed by numerical inversion of the Laplace transform, the method reproduces the density for larger times. We demonstrate the accuracy of our solution technique with a comparison to statistics obtained from a time-dependent solution of the diffusion equation and discrete particle simulations. In particular, we demonstrate that the method is capable of capturing the multimodal behavior in the capture time density that arises when the traps are strategically arranged. The hybrid method presented can be applied to scenarios involving both arbitrary domains and trap shapes.

Improving detection tools for the emerald ash borer (Coleoptera: Buprestidae): comparison of prism and multifunnel traps at varying population densities.

PubMed

Francese, Joseph A; Rietz, Michael L; Crook, Damon J; Fraser, Ivich; Lance, David R; Mastro, Victor C

2013-12-01

The current emerald ash borer survey trap used in the United States is a prism trap constructed from a stock purple corrugated plastic. In recent years, several colors (particularly shades of green and purple) have been shown to be more attractive to the emerald ash borer than this stock color. Our goal was to determine if plastics produced with these colors and incorporated into prism traps can improve and serve as a new alternative to plastics already in use for the emerald ash borer survey. The plastics were tested in moderate to heavily infested areas in Michigan in two initial studies to test their effectiveness at catching the emerald ash borer. Because results from studies performed in heavily infested sites may not always correspond with what is found along the edges of the infestation, we compared trap catch and detection rates (recording at least one catch on a trap over the course of the entire trapping season) of several trap types and colors at sites outside the core of the currently known emerald ash borer infestation in a nine-state detection tool comparison study. Two of the new plastics, a (Sabic) purple and a medium-dark (Sabic) green were incorporated into prism traps and tested alongside a standard purple prism trap and a green multifunnel trap. In areas with lower emerald ash borer density, the new purple (Sabic) corrugated plastic caught more beetles than the current purple prism trap, as well as more than the medium-dark green (Sabic) prism and green multifunnel traps. Sabic purple traps in the detection tools comparison study recorded a detection rate of 86% compared with 73, 66, and 58% for the standard purple, Sabic green, and green multifunnel traps, respectively. These detection rates were reduced to 80, 63, 55, and 46%, respectively, at low emerald ash borer density sites.

Environmentally friendly tool to control mosquito populations without risk of insecticide resistance: the Lehmann’s funnel entry trap

PubMed Central

2013-01-01

Background Current malaria control strategies have cut down the malaria burden in many endemic areas, however the emergence and rapid spread of insecticide and drug resistance undermine the success of these efforts. There is growing concern that malaria eradication will not be achieved without the introduction of novel control tools. One approach that has been developed in the last few years is based on house screening to reduce indoor mosquito vector densities and consequently decrease malaria transmission. Here screening and trapping were combined in one tool to control mosquito populations. The trap does not require an insecticide or even an attractant, yet it effectively collects incoming resistant and susceptible mosquitoes and kills them. Results Performance of the funnel entry trap was tested in low and high malaria vector density areas. An overall reduction of 70 to 80% of mosquito density was seen in both. Species and molecular forms of Anopheles gambiae identification indicated no variation in the number of Anopheles arabiensis and the molecular forms of An. gambiae between houses and traps. Mosquitoes collected in the traps and in houses were highly resistant to pyrethroids (0.9 kdr-based mechanism). Conclusion There is a global consensus that new intervention tools are needed to cross the last miles in malaria elimination/eradication. The funnel entry trap showed excellent promise in suppressing mosquito densities even in area of high insecticide resistance. It requires no chemicals and is self-operated. PMID:23758904

Measurement of landing mosquito density on humans

USDA-ARS?s Scientific Manuscript database

In conventional vector surveillance systems, adult mosquito density and the rate of human-mosquito contact is estimated from the mosquito numbers captured in mechanical traps. However, the design of the traps, their placement in the habitat and operating time, microclimate, and other environmental ...

Multiresidue pesticide analysis in ginseng and spinach by nontargeted and targeted screening procedures.

PubMed

Hayward, Douglas G; Wong, Jon W; Zhang, Kai; Chang, James; Shi, Feng; Banerjee, Kaushik; Yang, Paul

2011-01-01

Five different mass spectrometers interfaced to GC or LC were evaluated for their application to targeted and nontargeted screening of pesticides in two foods, spinach and ginseng. The five MS systems were capillary GC/MS/MS, GC-high resolution time-of-flight (GC/HR-TOF)-MS, TOF-MS interfaced with a comprehensive multidimensional GC (GCxGC/TOF-MS), an MS/MS ion trap hybrid mass (qTrap) system interfaced with an ultra-performance liquid chromatograph (UPLC-qTrap), and UPLC interfaced to an orbital trap high resolution mass spectrometer (UPLC/Orbitrap HR-MS). Each MS system was tested with spinach and ginseng extracts prepared through a modified quick, easy, cheap, effective, rugged, and safe (QuEChERS) procedure. Each matrix was fortified at 10 and 50 ng/g for spinach or 25 and 100 ng/g for ginseng with subsets of 486 pesticides, isomers, and metabolites representing most pesticide classes. HR-TOF-MS was effective in a targeted search for characteristic accurate mass ions and identified 97% of 170 pesticides in ginseng at 25 ng/g. A targeted screen of either ginseng or spinach found 94-95% of pesticides fortified for analysis at 10 ng/g with GC/MS/MS or LC/MS/MS using multiple reaction monitoring (MRM) procedures. Orbitrap-MS successfully found 89% of 177 fortified pesticides in spinach at 25 ng/g using a targeted search of accurate mass pseudomolecular ions in the positive electrospray ionization mode. A comprehensive GCxGC/TOF-MS system provided separation and identification of 342 pesticides and metabolites in a single 32 min acquisition with standards. Only 67 or 81% of the pesticides were identified in ginseng and spinach matrixes at 25 ng/g or 10 ng/g, respectively. MS/MS or qTrap-MS operated in the MRM mode produced the lowest false-negative rates, at 10 ng/g. Improvements to instrumentation, methods, and software are needed for efficient use of nontargeted screens in parallel with triple quadrupole MS.

Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

NASA Astrophysics Data System (ADS)

Palumbo, F.; Pazos, S.; Aguirre, F.; Winter, R.; Krylov, I.; Eizenberg, M.

2017-06-01

The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution. At the present, he is a research staff of the National Council of Science and Technology (CONICET), working in the National Commission of Atomic Energy (CNEA) in Buenos Aires, Argentina, well embedded within international research collaboration. Since 2008, he is Professor at the National Technological University (UTN) in Buenos Aires, Argentina. Dr. Palumbo has received research fellowships from: Marie Curie Fellowship within the 7th European Community Framework Programme, Abdus Salam International Centre for Theoretical Physics (ICTP) Italy, National Council of Science and Technology (CONICET) Argentina, and Consiglio Nazionale delle Ricerche (CNR) Italy. He is also a frequent scientific visitor of academic institutions as IMM-CNR-Italy, Minatec Grenoble-France, the Autonomous University of Barcelona-Spain, and the Israel Institute of Technology-Technion. He has authored and co-authored more than 50 papers in international conferences and journals.

Optical trapping assembling of clusters and nanoparticles in solution by CW and femtosecond lasers

NASA Astrophysics Data System (ADS)

Masuhara, Hiroshi; Sugiyama, Teruki; Yuyama, Ken-ichi; Usman, Anwar

2015-02-01

Laser trapping of molecular systems in solution is classified into three cases: JUST TRAPPING, EXTENDED TRAPPING, and NUCLEATION and GROWTH. The nucleation in amino acid solutions depends on where the 1064-nm CW trapping laser is focused, and crystallization and liquid-liquid phase separation are induced by laser trapping at the solution/air surface and the solution/glass interface, respectively. Laser trapping crystallization is achieved even in unsaturated solution, on which unique controls of crystallization are made possible. Crystal size is arbitrarily controlled by tuning laser power for a plate-like anhydrous crystal of l-phenylalanine. The α- or γ-crystal polymorph of glycine is selectively prepared by changing laser power and polarization. Further efficient trapping of nanoparticles and their following ejection induced by femtosecond laser pulses are introduced as unique trapping phenomena and finally future perspective is presented.

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

NASA Astrophysics Data System (ADS)

Spiga, S.; Rao, R.; Lamagna, L.; Wiemer, C.; Congedo, G.; Lamperti, A.; Molle, A.; Fanciulli, M.; Palma, F.; Irrera, F.

2012-07-01

Al-doped ZrO2 (Al-ZrO2) films deposited by atomic layer deposition onto silicon substrates and the interface with the TaN metal gate are investigated. In particular, structural properties of as-grown and annealed films in the 6-26 nm thickness range, as well as leakage and capacitive behavior of metal-oxide-semiconductor stacks are characterized. As-deposited Al-ZrO2 films in the mentioned thickness range are amorphous and crystallize in the ZrO2 cubic phase after thermal treatment at 900 °C. Correspondingly, the dielectric constant (k) value increases from 20 ± 1 to 27 ± 2. The Al-ZrO2 layers exhibit uniform composition through the film thickness and are thermally stable on Si, whereas chemical reactions take place at the TaN/Al-ZrO2 interface. A transient capacitance technique is adopted for monitoring charge trapping and flat band instability at short and long time scales. The role of traps nearby the TaN/Al-ZrO2 interface is discussed and compared with other metal/high-k oxide films. Further, analytical modeling of the flat band voltage shift with a power-law dependence on time allows extracting features of bulk traps close to the silicon/oxide interface, which exhibit energy levels in the 1.4-1.9 eV range above the valence band of the Al-ZrO2.

An Optical Trap for Relativistic Plasma

NASA Astrophysics Data System (ADS)

Zhang, Ping

2002-11-01

Optical traps have achieved remarkable success recently in confining ultra-cold matter.Traps capable of confining ultra-hot matter, or plasma, have also been built for applications such as basic plasma research and thermonuclear fusion. For instance, low-density plasmas with temperature less than 1 keV have been confined with static magnetic fields in Malmberg-Penning traps. Low-density 10-50 keV plasmas are confined in magnetic mirrors and tokamaks. High density plasmas have been trapped in optical traps with kinetic energies up to 10 keV [J. L. Chaloupka and D. D. Meyerhofer, Phys. Rev. Lett. 83, 4538 (1999)]. We present the results of experiment, theory and numerical simulation on an optical trap capable of confining relativistic plasma. A stationary interference grating with submicron spacing is created when two high-power (terawatt) laser pulses of equal wavelength (1-micron) are focused from orthogonal directions to the same point in space and time in high density underdense plasma. Light pressure gradients bunch electrons into sheets located at the minima of the interference pattern. The density of the bunched electrons is found to be up to ten times the background density, which is orders-of-magnitude above that previously reported for other optical traps or plasma waves. The amplitudes and frequencies of multiple satellites in the scattered spectrum also indicate the presence of a highly nonlinear ion wave and an electron temperature about 100 keV. Energy transfer from the stronger beam to the weaker beam is also observed. Potential applications include a test-bed for detailed studies of relativistic nonlinear scattering, a positron source and an electrostatic wiggler. This research is also relevant to fast igniter fusion or ion acceleration experiments, in which laser pulses with intensities comparable to those used in the experiment may also potentially beat [Y. Sentoku, et al., Appl. Phys. B 74, 207215 (2002)]. The details of a specific application, the injection of electrons into laser-driven plasma waves, will also be presented. With crossed beams, the energy of a laser-accelerated electron beam is increased and its emittance is decreased compared with a single beam, potentially paving the way towards an all-optical monoenergetic electron injector.

Effect of antimony on the deep-level traps in GaInNAsSb thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Islam, Muhammad Monirul, E-mail: islam.monir.ke@u.tsukuba.ac.jp; Miyashita, Naoya; Ahsan, Nazmul

2014-09-15

Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41 eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter.

PubMed

Goh, Youngin; Ahn, Jaehan; Lee, Jeong Rak; Park, Wan Woo; Ko Park, Sang-Hee; Jeon, Sanghun

2017-10-25

Amorphous oxide semiconductor-based thin film transistors (TFTs) have been considered as excellent switching elements for driving active-matrix organic light-emitting diodes (AMOLED) owing to their high mobility and process compatibility. However, oxide semiconductors have inherent defects, causing fast transient charge trapping and device instability. For the next-generation displays such as flexible, wearable, or transparent displays, an active semiconductor layer with ultrahigh mobility and high reliability at low deposition temperature is required. Therefore, we introduced high density plasma microwave-assisted (MWA) sputtering method as a promising deposition tool for the formation of high density and high-performance oxide semiconductor films. In this paper, we present the effect of the MWA sputtering method on the defects and fast charge trapping in In-Sn-Zn-O (ITZO) TFTs using various AC device characterization methodologies including fast I-V, pulsed I-V, transient current, low frequency noise, and discharge current analysis. Using these methods, we were able to analyze the charge trapping mechanism and intrinsic electrical characteristics, and extract the subgap density of the states of oxide TFTs quantitatively. In comparison to conventional sputtered ITZO, high density plasma MWA-sputtered ITZO exhibits outstanding electrical performance, negligible charge trapping characteristics and low subgap density of states. High-density plasma MWA sputtering method has high deposition rate even at low working pressure and control the ion bombardment energy, resulting in forming low defect generation in ITZO and presenting high performance ITZO TFT. We expect the proposed high density plasma sputtering method to be applicable to a wide range of oxide semiconductor device applications.

Back-illuminated imager and method for making electrical and optical connections to same

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2010-01-01

Methods for bringing or exposing metal pads or traces to the backside of a backside-illuminated imager allow the pads or traces to reside on the illumination side for electrical connection. These methods provide a solution to a key packaging problem for backside thinned imagers. The methods also provide alignment marks for integrating color filters and microlenses to the imager pixels residing on the frontside of the wafer, enabling high performance multispectral and high sensitivity imagers, including those with extremely small pixel pitch. In addition, the methods incorporate a passivation layer for protection of devices against external contamination, and allow interface trap density reduction via thermal annealing. Backside-illuminated imagers with illumination side electrical connections are also disclosed.

Synergistic Gating of Electro-Iono-Photoactive 2D Chalcogenide Neuristors: Coexistence of Hebbian and Homeostatic Synaptic Metaplasticity.

PubMed

John, Rohit Abraham; Liu, Fucai; Chien, Nguyen Anh; Kulkarni, Mohit R; Zhu, Chao; Fu, Qundong; Basu, Arindam; Liu, Zheng; Mathews, Nripan

2018-06-01

Emulation of brain-like signal processing with thin-film devices can lay the foundation for building artificially intelligent learning circuitry in future. Encompassing higher functionalities into single artificial neural elements will allow the development of robust neuromorphic circuitry emulating biological adaptation mechanisms with drastically lesser neural elements, mitigating strict process challenges and high circuit density requirements necessary to match the computational complexity of the human brain. Here, 2D transition metal di-chalcogenide (MoS 2 ) neuristors are designed to mimic intracellular ion endocytosis-exocytosis dynamics/neurotransmitter-release in chemical synapses using three approaches: (i) electronic-mode: a defect modulation approach where the traps at the semiconductor-dielectric interface are perturbed; (ii) ionotronic-mode: where electronic responses are modulated via ionic gating; and (iii) photoactive-mode: harnessing persistent photoconductivity or trap-assisted slow recombination mechanisms. Exploiting a novel multigated architecture incorporating electrical and optical biases, this incarnation not only addresses different charge-trapping probabilities to finely modulate the synaptic weights, but also amalgamates neuromodulation schemes to achieve "plasticity of plasticity-metaplasticity" via dynamic control of Hebbian spike-time dependent plasticity and homeostatic regulation. Coexistence of such multiple forms of synaptic plasticity increases the efficacy of memory storage and processing capacity of artificial neuristors, enabling design of highly efficient novel neural architectures. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Trapping of edge dislocations by a moving smectic-A smectic-B interface

NASA Astrophysics Data System (ADS)

Oswald, P.; Lejcek, L.

1991-09-01

We analyze how the motion of the edge dislocations of the smectic-A liquid crystal allows the system to relax plastically the stresses that are generated during the growth of the smectic-B plastic crystal. These stresses are both due, to the density difference between the two phases, and to the layer thickness variation at the phase transition. In particular, we calculate under which conditions a dislocation can be trapped by the smectic-B phase. Finally, we suggest that this dynamical trapping is responsible for the very large amount of stacking faults observed by X-ray diffraction. Nous analysons comment le mouvement des dislocations coin du cristal liquide smectique A permet de relaxer plastiquement les contraintes induites par la croissance du cristal plastique smectique B. Ces contraintes sont engendrées à la fois par la différence de densité qui existe entre les deux phases et par la variation d'épaisseur des couches à la transition. Nous calculons en particulier dans quelles conditions une dislocation coin peut être piégée par le smectique B. Enfin, nous suggérons que ce piégeage dynamique est à l'origine de la très forte densité de fautes d'empilement qui est couramment observée aux rayons X dans la phase B.

Positron annihilation at the Si/SiO2 interface

NASA Astrophysics Data System (ADS)

Leung, T. C.; Weinberg, Z. A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G. W.; Lynn, K. G.

1992-01-01

Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that Sint depends directly on holes at interface states or traps at the Si/SiO2 interface.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Shiyang; Green, Scott R.; Markosyan, Aram H.

Atomic microsystems have the potential of providing extremely accurate measurements of timing and acceleration. But, atomic microsystems require active maintenance of ultrahigh vacuum in order to have reasonable operating lifetimes and are particularly sensitive to magnetic fields that are used to trap electrons in traditional sputter ion pumps. Our paper presents an approach to trapping electrons without the use of magnetic fields, using radio frequency (RF) fields established between two perforated electrodes. The challenges associated with this magnet-less approach, as well as the miniaturization of the structure, are addressed. These include, for example, the transfer of large voltage (100–200 V)more » RF power to capacitive loads presented by the structure. The electron trapping module (ETM) described here uses eight electrode elements to confine and measure electrons injected by an electron beam, within an active trap volume of 0.7 cm 3. The operating RF frequency is 143.6 MHz, which is the measured series resonant frequency between the two RF electrodes. It was found experimentally that the steady state electrode potentials on electrodes near the trap became more negative after applying a range of RF power levels (up to 0.15 W through the ETM), indicating electron densities of ≈3 × 10 5 cm -3 near the walls of the trap. The observed results align well with predicted electron densities from analytical and numerical models. The peak electron density within the trap is estimated as ~1000 times the electron density in the electron beam as it exits the electron gun. Finally, this successful demonstration of the RF electron trapping concept addresses critical challenges in the development of miniaturized magnet-less ion pumps.« less

Accumulator for Low-Energy Laser-Cooled Particles

NASA Astrophysics Data System (ADS)

Mertes, Kevin; Walstrom, Peter; di Rosa, Michael; LANL Collaboration

2017-04-01

An accumulator builds phase-space density by use of a non-Hamiltonian process, thereby circumventing Liouville's theorem, which states that phase-space density is preserved in processes governed by Hamilton's equations. We have built an accumulator by a simple magneto-static cusp trap formed from two ring shaped permanent magnets. In traps with a central minimum of | B | , the stored particles are in a field-repelled (FR) Zeeman state, pushed away by | B | and oscillating about its minimum. After laser-cooling our particles and before entering the trap, we employ the non-hamiltonian process of optical pumping: A FR particle approaches the trap and climbs to the top of the confining potential with a finite velocity. There, it is switched to a field seeking (FS) state. As the switch does not change the velocity, the particle proceeds into the trap but continues to lose momentum because, now in the FS state, the particles sees the decreasing field as a potential hill to climb. Before it comes to a halt, the particle is switched back to a FR state for storage. The process repeats, building the trapped number and density. A simple consideration of potential and kinetic energies would show the trapped particles to have less kinetic energy than those injected. Los Alamos National Laboratory's Office of Laboratory Directed Research and Development.

Trapping Elusive Cats: Using Intensive Camera Trapping to Estimate the Density of a Rare African Felid

PubMed Central

Brassine, Eléanor; Parker, Daniel

2015-01-01

Camera trapping studies have become increasingly popular to produce population estimates of individually recognisable mammals. Yet, monitoring techniques for rare species which occur at extremely low densities are lacking. Additionally, species which have unpredictable movements may make obtaining reliable population estimates challenging due to low detectability. Our study explores the effectiveness of intensive camera trapping for estimating cheetah (Acinonyx jubatus) numbers. Using both a more traditional, systematic grid approach and pre-determined, targeted sites for camera placement, the cheetah population of the Northern Tuli Game Reserve, Botswana was sampled between December 2012 and October 2013. Placement of cameras in a regular grid pattern yielded very few (n = 9) cheetah images and these were insufficient to estimate cheetah density. However, pre-selected cheetah scent-marking posts provided 53 images of seven adult cheetahs (0.61 ± 0.18 cheetahs/100km²). While increasing the length of the camera trapping survey from 90 to 130 days increased the total number of cheetah images obtained (from 53 to 200), no new individuals were recorded and the estimated population density remained stable. Thus, our study demonstrates that targeted camera placement (irrespective of survey duration) is necessary for reliably assessing cheetah densities where populations are naturally very low or dominated by transient individuals. Significantly our approach can easily be applied to other rare predator species. PMID:26698574

Trapping Elusive Cats: Using Intensive Camera Trapping to Estimate the Density of a Rare African Felid.

PubMed

Brassine, Eléanor; Parker, Daniel

2015-01-01

Camera trapping studies have become increasingly popular to produce population estimates of individually recognisable mammals. Yet, monitoring techniques for rare species which occur at extremely low densities are lacking. Additionally, species which have unpredictable movements may make obtaining reliable population estimates challenging due to low detectability. Our study explores the effectiveness of intensive camera trapping for estimating cheetah (Acinonyx jubatus) numbers. Using both a more traditional, systematic grid approach and pre-determined, targeted sites for camera placement, the cheetah population of the Northern Tuli Game Reserve, Botswana was sampled between December 2012 and October 2013. Placement of cameras in a regular grid pattern yielded very few (n = 9) cheetah images and these were insufficient to estimate cheetah density. However, pre-selected cheetah scent-marking posts provided 53 images of seven adult cheetahs (0.61 ± 0.18 cheetahs/100 km²). While increasing the length of the camera trapping survey from 90 to 130 days increased the total number of cheetah images obtained (from 53 to 200), no new individuals were recorded and the estimated population density remained stable. Thus, our study demonstrates that targeted camera placement (irrespective of survey duration) is necessary for reliably assessing cheetah densities where populations are naturally very low or dominated by transient individuals. Significantly our approach can easily be applied to other rare predator species.

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

PubMed Central

Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

2013-01-01

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10–40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage. PMID:24145684

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors.

PubMed

Oakes, Landon; Westover, Andrew; Mares, Jeremy W; Chatterjee, Shahana; Erwin, William R; Bardhan, Rizia; Weiss, Sharon M; Pint, Cary L

2013-10-22

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage.

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

NASA Astrophysics Data System (ADS)

Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

2013-10-01

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage.

Defect and void evolution in oxide dispersion strengthened ferritic steels under 3.2 MeV Fe + ion irradiation with simultaneous helium injection

NASA Astrophysics Data System (ADS)

Kim, I.-S.; Hunn, J. D.; Hashimoto, N.; Larson^1, D. L.; Maziasz, P. J.; Miyahara, K.; Lee, E. H.

2000-08-01

In an attempt to explore the potential of oxide dispersion strengthened (ODS) ferritic steels for fission and fusion structural materials applications, a set of ODS steels with varying oxide particle dispersion were irradiated at 650°C, using 3.2 MeV Fe + and 330 keV He + ions simultaneously. The void formation mechanisms in these ODS steels were studied by juxtaposing the response of a 9Cr-2WVTa ferritic/martensitic steel and solution annealed AISI 316LN austenitic stainless steel under the same irradiation conditions. The results showed that void formation was suppressed progressively by introducing and retaining a higher dislocation density and finer precipitate particles. Theoretical analyses suggest that the delayed onset of void formation in ODS steels stems from the enhanced point defect recombination in the high density dislocation microstructure, lower dislocation bias due to oxide particle pinning, and a very fine dispersion of helium bubbles caused by trapping helium atoms at the particle-matrix interfaces.

Switching Oxide Traps

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.

2003-01-01

We consider radiation-induced charge trapping in SiO2 dielectric layers, primarily from the point of view of CMOS devices. However, SiO2 insulators are used in many other ways, and the same defects occur in other contexts. The key studies, which determined the nature of the oxide charge traps, were done primarily on gate oxides in CMOS devices, because that was the main radiation problem in CMOS at one time. There are two major reviews of radiation-induced oxide charge trapping already in the literature, which discuss the subject in far greater detail than is possible here. The first of these was by McLean et al. in 1989, and the second, ten years later, was intended as an update, because of additional, new work that had been reported. Basically, the picture that has emerged is that ionizing radiation creates electron-hole pairs in the oxide, and the electrons have much higher mobility than the holes. Therefore, the electrons are swept out of the oxide very rapidly by any field that is present, leaving behind any holes that escape the initial recombination process. These holes then undergo a polaron hopping transport toward the Si/SiO2 interface (under positive bias). Near the interface, some fraction of them fall into deep, relatively stable, long-lived hole traps. The nature and annealing behavior of these hole traps is the main focus of this paper.

Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

2018-04-01

This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

Sustainability assessment of traditional fisheries in Cau Hai lagoon (South China Sea).

PubMed

Marconi, Michele; Sarti, Massimo; Marincioni, Fausto

2010-01-01

Overfishing and progressive environmental degradation of the Vietnamese Cau Hai coastal lagoon appear to be threatening the ecological integrity and water quality of the largest estuarine complex of Southeast Asia. This study assessed the relationships between the density of traditional fisheries and organic matter sedimentary contents in Cau Hai lagoon. Data revealed that the density of stake traps (the most common fishing gear used in this lagoon), decreasing hydrodynamic energy in shallow water, causes the accumulation of a large fraction of organic matter refractory to degradation. The relationship between biopolymeric carbon (a proxy of availability of organic matter) and stake traps density fits a S-shape curve. The logistic equation calculated a stake traps density of 90 m of net per hectare, as the threshold over which maximum accumulation of organic matter occurs in Cau Hai. With such level of stake trap density, and assuming a theoretical stationary status of the lagoon, the time necessary for the system to reach hypoxic conditions has been calculated to be circa three weeks. We recommend that this density threshold should not be exceeded in the Cau Hai lagoon and that further analyses of organic loads in the sediment should be conducted to monitor the trophic conditions of this highly eutrophicated lagoon. 2010 Elsevier Ltd. All rights reserved.

Towards a Quantum Interface between Diamond Spin Qubits and Phonons in an Optical Trap

NASA Astrophysics Data System (ADS)

Ji, Peng; Momeen, M. Ummal; Hsu, Jen-Feng; D'Urso, Brian; Dutt, Gurudev

2014-05-01

We introduce a method to optically levitate a pre-selected nanodiamond crystal in air or vacuum. The nanodiamond containing nitrogen-vacancy (NV) centers is suspended on a monolayer of graphene transferred onto a patterned substrate. Laser light is focused onto the sample, using a home-built confocal microscope with a high numerical aperture (NA = 0.9) objective, simultaneously burning the graphene and creating a 3D optical trap that captures the falling nano-diamond at the beam waist. The trapped diamond is an ultra-high-Q mechanical oscillator, allowing us to engineer strong linear and quadratic coupling between the spin of the NV center and the phonon mode. The system could result in an ideal quantum interface between a spin qubit and vibrational phonon mode, potentially enabling applications in quantum information processing and sensing the development of quantum information storage and processing.

Low-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maiolo, L.; Pecora, A.; Fortunato, G.

2006-03-15

Silicon dioxide films have been deposited at temperatures below 270 deg. C in an electron cyclotron resonance (ECR) plasma reactor from O{sub 2}, SiH{sub 4}, and He gas mixture. Pinhole density analysis as a function of substrate temperature for different microwave powers was carried out. Films deposited at higher microwave power and at room temperature show defect densities (<7 pinhole/mm{sup 2}), ensuring low-temperature process integration on large area. From Fourier transform infrared analysis and thermal desorption spectrometry we also evaluated very low hydrogen content if compared to conventional rf-plasma-enhanced chemical-vapor-deposited (PECVD) SiO{sub 2} deposited at 350 deg. C. Electrical propertiesmore » have been measured in metal-oxide-semiconductor (MOS) capacitors, depositing SiO{sub 2} at RT as gate dielectric; breakdown electric fields >10 MV/cm and charge trapping at fields >6 MV/cm have been evaluated. From the study of interface quality in MOS capacitors, we found that even for low annealing temperature (200 deg. C), it is possible to considerably reduce the interface state density down to 5x10{sup 11} cm{sup -2} eV{sup -1}. To fully validate the ECR-PECVD silicon dioxide we fabricated polycrystalline silicon thin-film transistors using RT-deposited SiO{sub 2} as gate insulator. Different postdeposition thermal treatments have been studied and good device characteristics were obtained even for annealing temperature as low as 200 deg. C.« less

Time Resolved Microscopy of Charge Trapping in Polycrystalline Pentacene

NASA Astrophysics Data System (ADS)

Jaquith, Michael; Muller, Erik; Marohn, John

2007-03-01

The microscopic mechanisms by which charges trap in organic electronic materials are poorly understood. Muller and Marohn recently showed that electric force microscopy (EFM) can be used to image trapped charge in working pentacene thin-film transistors [E. M. Muller et al., Adv. Mater. 17 1410 (2005)]. We have made a new discovery by imaging trapped charge in pentacene films with much larger grains. In contrast to the previous study in which charge was found to trap inhomogeneously throughout the transistor gap, we find microscopic evidence for a new trapping mechanism in which charges trap predominantly at the pentacene/metal interface in large-grained devices. We conclude that at least two charge trapping mechanisms are at play in polycrystalline pentacene. We have made localized measurements of the trap growth over time by performing pulsed-gate EFM experiments. Trap formation is not instantaneous, taking up to a second to complete. Furthermore, the charge-trapping rate depends strongly on gate voltage (or hole concentration). This kinetics data is consistent with the hypothesis that traps form by chemical reaction.

Probing of barrier induced deviations in current-voltage characteristics of polymer devices by impedance spectroscopy

NASA Astrophysics Data System (ADS)

Khan, Motiur Rahman; Rao, K. S. R. Koteswara; Menon, R.

2017-05-01

Temperature dependent current-voltage measurements have been performed on poly(3-methylthiophene) based devices in metal/polymer/metal geometry in temperature range 90-300 K. Space charge limited current (SCLC) controlled by exponentially distributed traps is observed at all the measured temperatures at intermediate voltage range. At higher voltages, trap-free SCLC is observed at 90 K only while slope less than 2 is observed at higher temperatures which is quiet unusual in polymer devices. Impedance measurements were performed at different bias voltages. The unusual behavior observed in current-voltage characteristics is explained by Cole-Cole plot which gives the signature of interface dipole on electrode/polymer interface. Two relaxation mechanisms are obtained from the real part of impedance vs frequency spectra which confirms the interface related phenomena in the device

High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.

PubMed

Jaehnike, Felix; Pham, Duy Vu; Anselmann, Ralf; Bock, Claudia; Kunze, Ulrich

2015-07-01

A silicon oxide gate dielectric was synthesized by a facile sol-gel reaction and applied to solution-processed indium oxide based thin-film transistors (TFTs). The SiOx sol-gel was spin-coated on highly doped silicon substrates and converted to a dense dielectric film with a smooth surface at a maximum processing temperature of T = 350 °C. The synthesis was systematically improved, so that the solution-processed silicon oxide finally achieved comparable break downfield strength (7 MV/cm) and leakage current densities (<10 nA/cm(2) at 1 MV/cm) to thermally grown silicon dioxide (SiO2). The good quality of the dielectric layer was successfully proven in bottom-gate, bottom-contact metal oxide TFTs and compared to reference TFTs with thermally grown SiO2. Both transistor types have field-effect mobility values as high as 28 cm(2)/(Vs) with an on/off current ratio of 10(8), subthreshold swings of 0.30 and 0.37 V/dec, respectively, and a threshold voltage close to zero. The good device performance could be attributed to the smooth dielectric/semiconductor interface and low interface trap density. Thus, the sol-gel-derived SiO2 is a promising candidate for a high-quality dielectric layer on many substrates and high-performance large-area applications.

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

PubMed

Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

2016-06-09

Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

Frequency dispersion analysis of thin dielectric MOS capacitor in a five-element model

NASA Astrophysics Data System (ADS)

Zhang, Xizhen; Zhang, Sujuan; Zhu, Huichao; Pan, Xiuyu; Cheng, Chuanhui; Yu, Tao; Li, Xiangping; Cheng, Yi; Xing, Guichao; Zhang, Daming; Luo, Xixian; Chen, Baojiu

2018-02-01

An Al/ZrO2/IL/n-Si (IL: interface layer) MOS capacitor has been fabricated by metal organic decomposition of ZrO2 and thermal deposition Al. We have measured parallel capacitance (C m) and parallel resistance (R m) versus bias voltage curves (C m, R m-V) at different AC signal frequency (f), and C m, R m-f curves at different bias voltage. The curves of C m, R m-f measurements show obvious frequency dispersion in the range of 100 kHz-2 MHz. The energy band profile shows that a large voltage is applied on the ZrO2 layer and IL at accumulation, which suggests possible dielectric polarization processes by some traps in ZrO2 and IL. C m, R m-f data are used for frequency dispersion analysis. To exclude external frequency dispersion, we have extracted the parameters of C (real MOS capacitance), R p (parallel resistance), C IL (IL capacitance), R IL (IL resistance) and R s (Si resistance) in a five-element model by using a three-frequency method. We have analyzed intrinsic frequency dispersion of C, R p, C IL, R IL and R s by studying the dielectric characteristics and Si surface layer characteristics. At accumulation, the dispersion of C and R p is attributed to dielectric polarization such as dipolar orientation and oxide traps. The serious dispersion of C IL and R IL are relative to other dielectric polarization, such as border traps and fixed oxide traps. The dispersion of R s is mainly attributed to contact capacitance (C c) and contact resistance (R c). At depletion and inversion, the frequency dispersion of C, R p, C IL, R IL, and R s are mainly attributed to the depletion layer capacitance (C D). The interface trap capacitance (C it) and interface trap resistance (R it) are not dominant for the dispersion of C, R p, C IL, R IL, and R s.

An Overview of Radiation-Induced Interface Traps in MOS (Metal-Oxide Semiconductor) Structures

DTIC Science & Technology

1989-11-01

to be Controlled by hole transport to the Si/S1 02 interface and by neutral hydrogen diffusion, respectively. ’We also discuss several models which...trivalent Si which is undergo a dispersive hopping transport which not mobile and a mobile nonbridging oxygen. controls the rate of interface state... control the buildup of ping event itself seems to be a phonon-assisted radiation-induced interface states are subjects tunneling transition between

Observation of the Amorphous-to-Crystalline Surface Transition in Al-AlxOy Using Slow Positrons

NASA Astrophysics Data System (ADS)

Lynn, K. G.

1980-05-01

The amorphous-to-crystalline surface transition of AlxOy on the Al(111) surface is observed between 650 and 800 K with different O2 exposures by measuring the positronium (Ps) fraction produced by e+ impinging on the surface. The data are interpreted in terms of vacancy-type defects in the film or at the metal-metal-oxide interface which as trapping sites for e+ or Ps. As the ordering process proceeds to completion the trapping centers anneal out and the Ps fraction increases, showing an irreversible transition. This technique provides a new experimental method to study interfaces.

Molecular control of pentacene/ZnO photoinduced charge transfer

NASA Astrophysics Data System (ADS)

Spalenka, Josef W.; Paoprasert, Peerasak; Franking, Ryan; Hamers, Robert J.; Gopalan, Padma; Evans, Paul G.

2011-03-01

Photoinduced charge transfer modifies the device properties of illuminated pentacene field effect transistors (FETs) incorporating ZnO quantum dots at the gate insulator/pentacene interface. The transferred charge is trapped on electronic states associated with the ZnO quantum dots, with a steady state population approximately proportional to the rate of organic-inorganic charge transfer. Trapped charge shifts the threshold voltage of the FETs, providing the means to evaluate the rate of organic/inorganic charge transfer and the effects of interface modification. Monolayers of the wide-gap alkane stearic acid and the conjugated oligomer terthiophene attached to the ZnO suppress or permit charge transfer, respectively.

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

NASA Astrophysics Data System (ADS)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

TRAP/SEE Code Users Manual for Predicting Trapped Radiation Environments

NASA Technical Reports Server (NTRS)

Armstrong, T. W.; Colborn, B. L.

2000-01-01

TRAP/SEE is a PC-based computer code with a user-friendly interface which predicts the ionizing radiation exposure of spacecraft having orbits in the Earth's trapped radiation belts. The code incorporates the standard AP8 and AE8 trapped proton and electron models but also allows application of an improved database interpolation method. The code treats low-Earth as well as highly-elliptical Earth orbits, taking into account trajectory perturbations due to gravitational forces from the Moon and Sun, atmospheric drag, and solar radiation pressure. Orbit-average spectra, peak spectra per orbit, and instantaneous spectra at points along the orbit trajectory are calculated. Described in this report are the features, models, model limitations and uncertainties, input and output descriptions, and example calculations and applications for the TRAP/SEE code.

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

NASA Astrophysics Data System (ADS)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena

2016-03-01

Many passivation dielectrics are pursued for suppressing current collapse due to trapping/detrapping of access-region surface traps in AlGaN/GaN based metal oxide semiconductor heterojuction field effect transistors (MOS-HFETs). The suppression of current collapse can potentially be achieved either by reducing the interaction of surface traps with the gate via surface leakage current reduction, or by eliminating surface traps that can interact with the gate. But, the latter is undesirable since a high density of surface donor traps is required to sustain a high 2D electron gas density at the AlGaN/GaN heterointerface and provide a low ON-resistance. This presents a practical trade-off wherein a passivation dielectric with the optimal surface trap characteristics and minimal surface leakage is to be chosen. In this work, we compare MOS-HFETs fabricated with popular ALD gate/passivation dielectrics like SiO2, Al2O3, HfO2 and HfAlO along with an additional thick plasma-enhanced chemical vapor deposition SiO2 passivation. It is found that after annealing in N2 at 700 °C, the stack containing ALD HfAlO provides a combination of low surface leakage and a high density of shallow donor traps. Physics-based TCAD simulations confirm that this combination of properties helps quick de-trapping and minimal current collapse along with a low ON resistance.

Investigation of dielectric breakdown in silica-epoxy nanocomposites using designed interfaces.

PubMed

Bell, Michael; Krentz, Timothy; Keith Nelson, J; Schadler, Linda; Wu, Ke; Breneman, Curt; Zhao, Su; Hillborg, Henrik; Benicewicz, Brian

2017-06-01

Adding nano-sized fillers to epoxy has proven to be an effective method for improving dielectric breakdown strength (DBS). Evidence suggests that dispersion state, as well as chemistry at the filler-matrix interface can play a crucial role in property enhancement. Herein we investigate the contribution of both filler dispersion and surface chemistry on the AC dielectric breakdown strength of silica-epoxy nanocomposites. Ligand engineering was used to synthesize bimodal ligands onto 15nm silica nanoparticles consisting of long epoxy compatible, poly(glycidyl methacrylate) (PGMA) chains, and short, π-conjugated, electroactive surface ligands. Surface initiated RAFT polymerization was used to synthesize multiple graft densities of PGMA chains, ultimately controlling the dispersion of the filler. Thiophene, anthracene, and terthiophene were employed as π-conjugated surface ligands that act as electron traps to mitigate avalanche breakdown. Investigation of the synthesized multifunctional nanoparticles was effective in defining the maximum particle spacing or free space length (L f ) that still leads to property enhancement, as well as giving insight into the effects of varying the electronic nature of the molecules at the interface on breakdown strength. Optimization of the investigated variables was shown to increase the AC dielectric breakdown strength of epoxy composites as much as 34% with only 2wt% silica loading. Copyright © 2017 Elsevier Inc. All rights reserved.

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

NASA Astrophysics Data System (ADS)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

Molecular View of CO2 Capture by Polyethylenimine: Role of Structural and Dynamical Heterogeneity.

PubMed

Sharma, Pragati; Chakrabarty, Suman; Roy, Sudip; Kumar, Rajnish

2018-05-01

The molecular thermodynamics and kinetics of CO 2 sorption in Polyethylenimine (PEI) melt have been investigated systematically using GCMC and MD simulations. We elucidate presence of significant structural and dynamic heterogeneity associated with the overall absorption process. CO 2 adsorption in a PEI membrane shows a distinct two-stage process of a rapid CO 2 adsorption at the interfaces (hundreds of picoseconds) followed by a significantly slower diffusion limited release toward the interior bulk regions of PEI melt (hundreds of nanoseconds to microseconds). The spatial heterogeneity of local structural features of the PEI chains lead to significantly heterogeneous absorption characterized by clustering and trapping of CO 2 molecules that then lead to subdiffusive motion of CO 2 . In the complex interplay of interaction and entropy, the latter emerges out to be the major determining factor with significantly higher solubility of CO 2 near the interfaces despite having lower density of binding amine groups. Regions having higher free-volume (entropically favorable) viz. interfaces, pores and loops demonstrate higher CO 2 capture ability. Various local structural features of PEI conformations, for example, inter- and intrachain loops, pores of different radii, and di- or tricoordinated pores are explored for their effects on the varying CO 2 adsorption abilities.

Probing the density of trap states in the middle of the bandgap using ambipolar organic field-effect transistors

NASA Astrophysics Data System (ADS)

Häusermann, Roger; Chauvin, Sophie; Facchetti, Antonio; Chen, Zhihua; Takeya, Jun; Batlogg, Bertram

2018-04-01

The number of trap states in the band gap of organic semiconductors directly influences the charge transport as well as the threshold and turn-on voltage. Direct charge transport measurements have been used until now to probe the trap states rather close to the transport level, whereas their number in the middle of the band gap has been elusive. In this study, we use PDIF-CN2, a well known n-type semiconductor, together with vanadium pentoxide electrodes to build ambipolar field-effect transistors. Employing three different methods, we study the density of trap states in the band gap of the semiconductor. These methods give consistent results, and no pool of defect states was found. Additionally, we show first evidence that the number of trap states close to the transport level is correlated with the number of traps in the middle of the band-gap, meaning that a high number of trap states close to the transport level also implies a high number of trap states in the middle of the band gap. This points to a common origin of the trap states over a wide energy range.

Camera trapping estimates of density and survival of fishers (Martes pennanti)

Treesearch

Mark J. Jordan; Reginald H. Barrett; Kathryn L. Purcell

2011-01-01

Developing efficient monitoring strategies for species of conservation concern is critical to ensuring their persistence. We have developed a method using camera traps to estimate density and survival in mesocarnivores and tested it on a population of fishers Martes pennanti in an area of approximately 300 km2 of the southern...

Unitary Fermi gas in a harmonic trap

NASA Astrophysics Data System (ADS)

Chang, S. Y.; Bertsch, G. F.

2007-08-01

We present an ab initio calculation of small numbers of trapped, strongly interacting fermions using the Green’s function Monte Carlo method. The ground-state energy, density profile, and pairing gap are calculated for particle numbers N=2 22 using the parameter-free “unitary” interaction. Trial wave functions are taken in the form of correlated pairs in a harmonic oscillator basis. We find that the lowest energies are obtained with a minimum explicit pair correlation beyond that needed to exploit the degeneracy of oscillator states. We find that the energies can be well fitted by the expression aTFETF+Δmod(N,2) where ETF is the Thomas-Fermi energy of a noninteracting gas in the trap and Δ is the pairing gap. There is no evidence of a shell correction energy in the systematics, but the density distributions show pronounced shell effects. We find the value Δ=0.7±0.2ω for the pairing gap. This is smaller than the value found for the uniform gas at a density corresponding to the central density of the trapped gas.

Quartz resonator fluid density and viscosity monitor

DOEpatents

Martin, Stephen J.; Wiczer, James J.; Cernosek, Richard W.; Frye, Gregory C.; Gebert, Charles T.; Casaus, Leonard; Mitchell, Mary A.

1998-01-01

A pair of thickness-shear mode resonators, one smooth and one with a textured surface, allows fluid density and viscosity to be independently resolved. A textured surface, either randomly rough or regularly patterned, leads to trapping of liquid at the device surface. The synchronous motion of this trapped liquid with the oscillating device surface allows the device to weigh the liquid; this leads to an additional response that depends on liquid density. This additional response enables a pair of devices, one smooth and one textured, to independently resolve liquid density and viscosity; the difference in responses determines the density while the smooth device determines the density-viscosity product, and thus, the pair determines both density and viscosity.

Textured-surface quartz resonator fluid density and viscosity monitor

DOEpatents

Martin, Stephen J.; Wiczer, James J.; Cernosek, Richard W.; Frye, Gregory C.; Gebert, Charles T.; Casaus, Leonard; Mitchell, Mary A.

1998-08-25

A pair of thickness-shear mode resonators, one smooth and one with a textured surface, allows fluid density and viscosity to be independently resolved. A textured surface, either randomly rough or regularly patterned, leads to trapping of liquid at the device surface. The synchronous motion of this trapped liquid with the oscillating device surface allows the device to weigh the liquid; this leads to an additional response that depends on liquid density. This additional response enables a pair of devices, one smooth and one textured, to independently resolve liquid density and viscosity; the difference in responses determines the density while the smooth device determines the density-viscosity product, and thus, the pair determines both density and viscosity.

Charge-carrier relaxation in sonochemically fabricated dendronized CaSiO3-SiO2-Si nanoheterostructures

NASA Astrophysics Data System (ADS)

Savkina, Rada; Smirnov, Aleksey; Kirilova, Svitlana; Shmid, Volodymyr; Podolian, Artem; Nadtochiy, Andriy; Odarych, Volodymyr; Korotchenkov, Oleg

2018-04-01

We present systematic studies of charge-carrier relaxation processes in sonochemically nanostructured silicon wafers. Impedance spectroscopy and transient photovoltage techniques are employed. It is found that interface potential in Si wafers remarkably increases upon their exposure to sonochemical treatments in Ca-rich environments. In contrast, the density of fast interface electron states remains almost unchanged. It is found that the initial photovoltage decay, taken before ultrasonic treatments, exhibits the involvement of shorter- and longer time recombination and trapping centers. The decay speeds up remarkably due to cavitation treatments, which is accompanied by a substantial quenching of the photovoltage magnitude. It is also found that, before the treatments, the photovoltage magnitude is markedly non-uniform over the wafer surface, implying the existence of distributed sites affecting distribution of photoexcited carriers. The treatments cause an overall broadening of the photovoltage distribution. Furthermore, impedance measurements monitor the progress in surface structuring relevant to several relaxation processes. We believe that sonochemical nanostructuring of silicon wafers with dendronized CaSiO3 may enable new promising avenue towards low-cost solar energy efficiency multilayered solar cell device structures.

High-performance solar cells with induced crystallization of perovskite by an evenly distributed CdSe quantum dots seed-mediated underlayer

NASA Astrophysics Data System (ADS)

Qi, Jiabin; Xiong, Hao; Wang, Gang; Xie, Huaqing; Jia, Wei; Zhang, Qinghong; Li, Yaogang; Wang, Hongzhi

2018-02-01

Crystallization and interface engineering of perovskite are the most important factors in achieving high-performance perovskite solar cells (PSCs). Herein, we construct an ultrathin CdSe quantum dots (QDs) underlayer via a solution-processable method, which acts as a seed-mediated layer for perfect perovskite film, with both uniform morphology and better absorption capacity. In addition, CdSe QDs and perovskites form a fully crystalline heterojunction, which is beneficial to minimizing the defect and trap densities. Then, an Ostwald ripening process is adopted to fabricate large-grain, pinhole-free perovskite thin film, by a simple methylammonium bromide treatment. Besides, the first principle is applied in calculating organic/inorganic hybrid perovskite, confirming that electrons can move even quicker and more effectively, as a result of our work. Due to these treatments, representing a very simple method to simultaneously control perovskite crystallization and optimize the interfaces in PSCs, a maximum power conversion efficiency of 15.68% is achieved, 35% higher than the PSC both without CdSe and MABr treatment (11.57%), indicating better performance.

Analysis of the PEDOT:PSS/Si nanowire hybrid solar cell with a tail state model

NASA Astrophysics Data System (ADS)

Ho, Kuan-Ying; Li, Chi-Kang; Syu, Hong-Jhang; Lai, Yi; Lin, Ching-Fuh; Wu, Yuh-Renn

2016-12-01

In this paper, the electrical properties of the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)/silicon nanowire hybrid solar cell have been analyzed and an optimized structure is proposed. In addition, the planar PEDOT:PSS/c-Si hybrid solar cell is also modeled for comparison. We first developed a simulation software which is capable of modeling organic/inorganic hybrid solar cells by including Gaussian shape density of states into Poisson and drift-diffusion solver to present the tail states and trap states in the organic material. Therefore, the model can handle carrier transport, generation, and recombination in both organic and inorganic materials. Our results show that at the applied voltage near open-circuit voltage (Voc), the recombination rate becomes much higher at the PEDOT:PSS/Si interface region, which limits the fill factor and Voc. Hence, a modified structure with a p-type amorphous silicon (a-Si) layer attached on the interface of Si layer and an n+-type Si layer inserted near the bottom contact are proposed. The highest conversion efficiency of 16.10% can be achieved if both structures are applied.

Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

NASA Astrophysics Data System (ADS)

Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

2013-12-01

Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

Quasiparticle trapping and the density of states in superconducting proximity structures

NASA Astrophysics Data System (ADS)

Warburton, P. A.; Blamire, M. G.

1994-08-01

An experimental study of quasiparticle trapping in epitaxial and polycrystalline Ta films on epitaxial Nb is presented using three-terminal double tunnel junction devices. It is shown that polycrystalline Ta is a more effective trap than epitaxial Ta. The experimentally measured tunneling density of states is used to calculate the inelastic quasiparticle scattering rates in the two types of Ta using the standard theory of Kaplan et a. (1976).The agreement of this calculation with the experimental results shows that the tunneling density of states may be used to determine scattering rates in proximitized superconducting films whose thickness is greater than the coherence length. This result is important since no existing theory satisfactorily describes the density of states in such proximity structures, which are currently being developed for use in high-resolution particle spectrometers.

Estimating black bear density using DNA data from hair snares

USGS Publications Warehouse

Gardner, B.; Royle, J. Andrew; Wegan, M.T.; Rainbolt, R.E.; Curtis, P.D.

2010-01-01

DNA-based mark-recapture has become a methodological cornerstone of research focused on bear species. The objective of such studies is often to estimate population size; however, doing so is frequently complicated by movement of individual bears. Movement affects the probability of detection and the assumption of closure of the population required in most models. To mitigate the bias caused by movement of individuals, population size and density estimates are often adjusted using ad hoc methods, including buffering the minimum polygon of the trapping array. We used a hierarchical, spatial capturerecapture model that contains explicit components for the spatial-point process that governs the distribution of individuals and their exposure to (via movement), and detection by, traps. We modeled detection probability as a function of each individual's distance to the trap and an indicator variable for previous capture to account for possible behavioral responses. We applied our model to a 2006 hair-snare study of a black bear (Ursus americanus) population in northern New York, USA. Based on the microsatellite marker analysis of collected hair samples, 47 individuals were identified. We estimated mean density at 0.20 bears/km2. A positive estimate of the indicator variable suggests that bears are attracted to baited sites; therefore, including a trap-dependence covariate is important when using bait to attract individuals. Bayesian analysis of the model was implemented in WinBUGS, and we provide the model specification. The model can be applied to any spatially organized trapping array (hair snares, camera traps, mist nests, etc.) to estimate density and can also account for heterogeneity and covariate information at the trap or individual level. ?? The Wildlife Society.

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

NASA Astrophysics Data System (ADS)

Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan

2017-07-01

We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

A high-throughput lab-on-a-chip interface for zebrafish embryo tests in drug discovery and ecotoxicology

NASA Astrophysics Data System (ADS)

Zhu, Feng; Akagi, Jin; Hall, Chris J.; Crosier, Kathryn E.; Crosier, Philip S.; Delaage, Pierre; Wlodkowic, Donald

2013-12-01

Drug discovery screenings performed on zebrafish embryos mirror with a high level of accuracy. The tests usually performed on mammalian animal models, and the fish embryo toxicity assay (FET) is one of the most promising alternative approaches to acute ecotoxicity testing with adult fish. Notwithstanding this, conventional methods utilising 96-well microtiter plates and manual dispensing of fish embryos are very time-consuming. They rely on laborious and iterative manual pipetting that is a main source of analytical errors and low throughput. In this work, we present development of a miniaturised and high-throughput Lab-on-a-Chip (LOC) platform for automation of FET assays. The 3D high-density LOC array was fabricated in poly-methyl methacrylate (PMMA) transparent thermoplastic using infrared laser micromachining while the off-chip interfaces were fabricated using additive manufacturing processes (FDM and SLA). The system's design facilitates rapid loading and immobilization of a large number of embryos in predefined clusters of traps during continuous microperfusion of drugs/toxins. It has been conceptually designed to seamlessly interface with both upright and inverted fluorescent imaging systems and also to directly interface with conventional microtiter plate readers that accept 96-well plates. We also present proof-of-concept interfacing with a high-speed imaging cytometer Plate RUNNER HD® capable of multispectral image acquisition with resolution of up to 8192 x 8192 pixels and depth of field of about 40 μm. Furthermore, we developed a miniaturized and self-contained analytical device interfaced with a miniaturized USB microscope. This system modification is capable of performing rapid imaging of multiple embryos at a low resolution for drug toxicity analysis.

Dynamic Properties of Electronic Trapping Centers at the Si-SiO2 Interface.

DTIC Science & Technology

1983-05-01

Variation of i,. %.rhich is the sum of the majorty and minoritl) the integration is over the semiconductor bandgap. The for- carrier emision and capture...majority carriers, and the dashed line is for majority,- counted for, will yield erroneous interface-state distribu- carrier emision onl) tions

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P.

2013-11-25

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5 eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

NASA Astrophysics Data System (ADS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-05-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Hybrid Quantum Systems with Trapped Charged Particles

NASA Astrophysics Data System (ADS)

Kotler, Shlomi; Leibfried, Dietrich; Simmonds, Raymond; Wineland, Dave

We will review a joint effort by the Ion Storage Group and the Advanced Microwave Photonics Group at NIST (Boulder, CO) to design a hybrid system that interfaces charged particles with macroscopic high-Q resonators. We specifically consider coupling trapped charges to superconducting LC resonators, the mechanical modes of Silicon-Nitride membranes, and piezo-electric materials. We aim to achieve the strong coupling regime, where a single quantum of motion of the trapped charge can be coherently exchanged with harmonic motion of the macroscopic entity (electrical and/or mechanical). These kind of devices could potentially take advantage of both macroscopic control techniques and the long quantum coherence of its trapped charged particles.

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.; Wang, W. L.; Loo, R. Y.; Rahilly, W. P.

1984-01-01

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Comparative study of He bubble formation in nanostructured reduced activation steel and its coarsen-grained counterpart

NASA Astrophysics Data System (ADS)

Liu, W. B.; Zhang, J. H.; Ji, Y. Z.; Xia, L. D.; Liu, H. P.; Yun, D.; He, C. H.; Zhang, C.; Yang, Z. G.

2018-03-01

High temperature (550 °C) He ions irradiation was performed on nanostructured (NS) and coarsen-grained (CG) reduced activation steel to investigate the effects of GBs/interfaces on the formation of bubbles during irradiation. Experimental results showed that He bubbles were preferentially trapped at dislocations and/or grain boundaries (GBs) for both of the samples. Void denuded zones (VDZs) were observed in the CG samples, while VDZs near GBs were unobvious in NS sample. However, both the average bubble size and the bubble density in peak damage region of the CG sample were significantly larger than that observed in the NS sample, which indicated that GBs play an important role during the irradiation, and the NS steel had better irradiation resistance than its CG counterpart.

Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.

PubMed

Wu, Chien-Hung; Chang, Kow-Ming; Chen, Yi-Ming; Huang, Bo-Wen; Zhang, Yu-Xin; Wang, Shui-Jinn

2018-03-01

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique and KrF excimer laser annealing (ELA) were employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO-TFTs). Device with a 150 mJ/cm2 laser annealing densities demonstrated excellent electrical characteristics with improved on/off current ratio of 4.7×107, high channel mobility of 10 cm2/V-s, and low subthreshold swing of 0.15 V/dec. The improvements are attributed to the adjustment of oxygen vacancies in the IGZO channel to an appropriate range of around 28.3% and the reduction of traps at the high-k/IGZO interface.

Post annealing effects on the electrical characteristics of pentacene thin film transistors on flexible substrates.

PubMed

Oh, Tae-Yeon; Jeong, Shin Woo; Chang, Seongpil; Park, Jung-Ho; Kim, Jong-Woo; Choi, Kookhyun; Ha, Hyeon-Jun; Hwang, Bo-Yeon; Ju, Byeong-Kwon

2013-05-01

This work studies the effect of post annealing of pentacene on a flexible substrate through the examination of electrical properties and surface morphologies. It is confirmed that the best performance of devices is achieved when the post annealing temperature is 60 degrees C, since the grain size increases, which decrease grain boundaries caused charge transport limit. We can also confirmed the large threshold voltage shift of device annealed at 60 degrees C that means the lower trap density between channel and insulator interface. The device annealed at 60 degrees C exhibits a saturation mobility of 1.99 cm2/V x s, an on/off ratio of 1.87 x 10(4), and a subthreshold slope of 2.5 V/decade.

Charge carrier transport and injection across organic heterojunctions

NASA Astrophysics Data System (ADS)

Tsang, Sai Wing

The discovery of highly efficient organic light-emitting diodes (OLEDs) in the 1980s has stimulated extensive research on organic semiconductors and devices. Underlying this breakthrough is the realization of the organic heterojunction (OH). Besides OLEDs, the implementation of the OH also significantly improves the power conversion efficiency in organic photovoltaic cells (OPVs). The continued technological advancements in organic electronic devices depend on the accumulation of knowledge of the intrinsic properties of organic materials and related interfaces. Among them, charge-carrier transport and carrier injection are two key factors that govern the performance of a device. This thesis mainly focuses on the charge carrier injection and transport at organic heterojunctions. The carrier transport properties of different organic materials used in this study are characterized by time-of-flight (TOF) and admittance spectroscopy (AS). An injection model is formulated by considering the carrier distribution at both sides of the interface. Using a steady-state simulation approach, the effect of accumulated charges on energy level alignment at OH is revealed. Instead of a constant injection barrier, it is found that the barrier varies with applied voltage. Moreover, an escape probability function in the injection model is modified by taking into account the total hopping rate and available hopping sites at the interface. The model predicts that the injection current at low temperature can be dramatically modified by an extremely small density of deep trap states. More importantly, the temperature dependence of the injection current is found to decrease with increasing barrier height. This suggests that extracting the barrier height from the J vs 1/T plot, as commonly employed in the literature, is problematic. These theoretical predictions are confirmed by a series of experiments on heterojunction devices with various barrier heights. In addition, the presence of deep trap states is also consistent with carrier mobility measurements at low temperature. From the point of view of application, an interface chemical doping method is proposed to engineer the carrier injection at an organic heterojunction. It is found that the injection current can be effectively increased or suppressed by introducing a thin (2 nm) doped organic layer at the interface. This technique is further extended to study the impact of an injection barrier at the OH, in OLEDs, on device performance. It is shown that a 0.3 eV injection barrier at the OH, that is normally negligible at metal/organic interface, can reduce the device efficiency by 25%. This is explained by the carrier distribution in the density-of-states at the OH. Furthermore, the carrier transport properties in a bulk heterojunction system are investigated. The bulk heterojunction consists of an interpenetrating network of a polymeric electron donor and a molecular electron acceptor. This material system has been studied in the last few years as an attractive power conversion efficiency (5% under AM 1.5) of OPV cells has been demonstrated. It is found that the electron mobility is greatly dependent on the thermal treatment of the film. Interfacial dipole effect at the heterojunction between the donor and the acceptor is proposed to be the determining factor that alters the carrier mobility in different nanoscale structures.

Designing High-Efficiency Thin Silicon Solar Cells Using Parabolic-Pore Photonic Crystals

NASA Astrophysics Data System (ADS)

Bhattacharya, Sayak; John, Sajeev

2018-04-01

We demonstrate the efficacy of wave-interference-based light trapping and carrier transport in parabolic-pore photonic-crystal, thin-crystalline silicon (c -Si) solar cells to achieve above 29% power conversion efficiencies. Using a rigorous solution of Maxwell's equations through a standard finite-difference time domain scheme, we optimize the design of the vertical-parabolic-pore photonic crystal (PhC) on a 10 -μ m -thick c -Si solar cell to obtain a maximum achievable photocurrent density (MAPD) of 40.6 mA /cm2 beyond the ray-optical, Lambertian light-trapping limit. For a slanted-parabolic-pore PhC that breaks x -y symmetry, improved light trapping occurs due to better coupling into parallel-to-interface refraction modes. We achieve the optimum MAPD of 41.6 mA /cm2 for a tilt angle of 10° with respect to the vertical axis of the pores. This MAPD is further improved to 41.72 mA /cm2 by introducing a 75-nm SiO2 antireflective coating on top of the solar cell. We use this MAPD and the associated charge-carrier generation profile as input for a numerical solution of Poisson's equation coupled with semiconductor drift-diffusion equations using a Shockley-Read-Hall and Auger recombination model. Using experimentally achieved surface recombination velocities of 10 cm /s , we identify semiconductor doping profiles that yield power conversion efficiencies over 29%. Practical considerations of additional upper-contact losses suggest efficiencies close to 28%. This improvement beyond the current world record is largely due to an open-circuit voltage approaching 0.8 V enabled by reduced bulk recombination in our thin silicon architecture while maintaining a high short-circuit current through wave-interference-based light trapping.

Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, C.-Y., E-mail: cychang@mosfet.t.u-tokyo.ac.jp; Takenaka, M.; Takagi, S.

We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectivenessmore » of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.« less

Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fedorenko, Y. G., E-mail: y.fedorenko@liverpool.ac.uk; Major, J. D.; Pressman, A.

2015-10-28

By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gapmore » states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.« less

Memristive behavior of the SnO2/TiO2 interface deposited by sol-gel

NASA Astrophysics Data System (ADS)

Boratto, Miguel H.; Ramos, Roberto A.; Congiu, Mirko; Graeff, Carlos F. O.; Scalvi, Luis V. A.

2017-07-01

A novel and cheap Resistive Random Access Memory (RRAM) device is proposed within this work, based on the interface between antimony doped Tin Oxide (4%at Sb:SnO2) and Titanium Oxide (TiO2) thin films, entirely prepared through a low-temperature sol-gel process. The device was fabricated on glass slides using evaporated aluminum electrodes. Typical bipolar memristive behavior under cyclic voltage sweeping and square wave voltages, with well-defined high and low resistance states (HRS and LRS), and set and reset voltages are shown in our samples. The switching mechanism, explained by charges trapping/de-trapping by defects in the SnO2/TiO2 interface, is mainly driven by the external electric field. The calculated on/off ratio was about 8 × 102 in best conditions with good reproducibility over repeated measurement cycles under cyclic voltammetry and about 102 under applied square wave voltage.

On the effect of Lyman α trapping during the initial collapse of massive black hole seeds

NASA Astrophysics Data System (ADS)

Ge, Qi; Wise, John H.

2017-12-01

One viable seeding mechanism for supermassive black holes is the direct gaseous collapse route in pre-galactic dark matter haloes, producing objects on the order of 104-106 M⊙. These events occur when the gas is prevented from cooling below 104 K that requires a metal-free and relatively H2-free medium. The initial collapse cools through atomic hydrogen transitions, but the gas becomes optically thick to the cooling radiation at high densities. We explore the effects of Lyman α trapping in such a collapsing system with a suite of Monte Carlo radiation transport calculations in uniform density and isotropic cases that are based from a cosmological simulation. Our method includes both non-coherent scattering and two-photon line cooling. We find that Lyman α radiation is marginally trapped in the parsec-scale gravitationally unstable central cloud, allowing the temperature to increase to 50 000 K at a number density of 3 × 104 cm-3 and increasing the Jeans mass by a factor of 5. The effective equation of state changes from isothermal at low densities to have an adiabatic index of 4/3 around the temperature maximum and then slowly retreats back to isothermal at higher densities. Our results suggest that Lyman α trapping delays the initial collapse by raising the Jeans mass. Afterward the high-density core cools back to 104 K that is surrounded by a warm envelope whose inward pressure may alter the fragmentation scales at high densities.

25th anniversary article: charge transport and recombination in polymer light-emitting diodes.

PubMed

Kuik, Martijn; Wetzelaer, Gert-Jan A H; Nicolai, Herman T; Craciun, N Irina; De Leeuw, Dago M; Blom, Paul W M

2014-01-01

This article reviews the basic physical processes of charge transport and recombination in organic semiconductors. As a workhorse, LEDs based on a single layer of poly(p-phenylene vinylene) (PPV) derivatives are used. The hole transport in these PPV derivatives is governed by trap-free space-charge-limited conduction, with the mobility depending on the electric field and charge-carrier density. These dependencies are generally described in the framework of hopping transport in a Gaussian density of states distribution. The electron transport on the other hand is orders of magnitude lower than the hole transport. The reason is that electron transport is hindered by the presence of a universal electron trap, located at 3.6 eV below vacuum with a typical density of ca. 3 × 10¹⁷ cm⁻³. The trapped electrons recombine with free holes via a non-radiative trap-assisted recombination process, which is a competing loss process with respect to the emissive bimolecular Langevin recombination. The trap-assisted recombination in disordered organic semiconductors is governed by the diffusion of the free carrier (hole) towards the trapped carrier (electron), similar to the Langevin recombination of free carriers where both carriers are mobile. As a result, with the charge-carrier mobilities and amount of trapping centers known from charge-transport measurements, the radiative recombination as well as loss processes in disordered organic semiconductors can be fully predicted. Evidently, future work should focus on the identification and removing of electron traps. This will not only eliminate the non-radiative trap-assisted recombination, but, in addition, will shift the recombination zone towards the center of the device, leading to an efficiency improvement of more than a factor of two in single-layer polymer LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The structural, electronic and optical properties of Au-ZnO interface structure from the first-principles calculation

NASA Astrophysics Data System (ADS)

Huo, Jin-Rong; Li, Lu; Cheng, Hai-Xia; Wang, Xiao-Xu; Zhang, Guo-Hua; Qian, Ping

2018-03-01

The interface structure, electronic and optical properties of Au-ZnO are studied using the first-principles calculation based on density functional theory (DFT). Given the interfacial distance, bonding configurations and terminated surface, we built the optimal interface structure and calculated the electronic and optical properties of the interface. The total density of states, partial electronic density of states, electric charge density and atomic populations (Mulliken) are also displayed. The results show that the electrons converge at O atoms at the interface, leading to a stronger binding of interfaces and thereby affecting the optical properties of interface structures. In addition, we present the binding energies of different interface structures. When the interface structure of Au-ZnO gets changed, furthermore, varying optical properties are exhibited.

2.4 Å resolution crystal structure of human TRAP1NM, the Hsp90 paralog in the mitochondrial matrix.

PubMed

Sung, Nuri; Lee, Jungsoon; Kim, Ji Hyun; Chang, Changsoo; Tsai, Francis T F; Lee, Sukyeong

2016-08-01

TRAP1 is an organelle-specific Hsp90 paralog that is essential for neoplastic growth. As a member of the Hsp90 family, TRAP1 is presumed to be a general chaperone facilitating the late-stage folding of Hsp90 client proteins in the mitochondrial matrix. Interestingly, TRAP1 cannot replace cytosolic Hsp90 in protein folding, and none of the known Hsp90 co-chaperones are found in mitochondria. Thus, the three-dimensional structure of TRAP1 must feature regulatory elements that are essential to the ATPase activity and chaperone function of TRAP1. Here, the crystal structure of a human TRAP1NM dimer is presented, featuring an intact N-domain and M-domain structure, bound to adenosine 5'-β,γ-imidotriphosphate (ADPNP). The crystal structure together with epitope-mapping results shows that the TRAP1 M-domain loop 1 contacts the neighboring subunit and forms a previously unobserved third dimer interface that mediates the specific interaction with mitochondrial Hsp70.

Pentacene Schottky diodes studied by impedance spectroscopy: Doping properties and trap response

NASA Astrophysics Data System (ADS)

Pahner, Paul; Kleemann, Hans; Burtone, Lorenzo; Tietze, Max L.; Fischer, Janine; Leo, Karl; Lüssem, Björn

2013-11-01

We study doping properties and charge carrier trap distributions in pentacene Schottky diodes doped by the fluorinated fullerene derivate C60F36 and 2,2'-(perdiylidene)dimalononitrile (F6-TCNNQ) upon small signal excitation. We show that the charge carrier depletion zones present in these Schottky diodes are tunable by the applied bias and temperature. Mott-Schottky evaluations yield reduced doping efficiencies and dopant activation energies between 19 and 54 meV. In the low-frequency regime, we resolve additional capacitive contributions from inherent charge carrier traps. A Gaussian distributed trap center 0.6 eV above the hole transport level with a density in the range of 1016 cm-3 depending on the material purity is found to be an intrinsic feature of the pentacene matrix. Upon doping, the deep Gaussian trap center saturates in density and broad exponentially tailing trap distributions arise. Subsequent ultraviolet photoelectron spectroscopy measurements are conducted to inspect for energetic broadening due to doping.

Effects of HfO2/Al2O3 gate stacks on electrical performance of planar In x Ga1- x As tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Ahn, Dae-Hwan; Yoon, Sang-Hee; Takenaka, Mitsuru; Takagi, Shinichi

2017-08-01

We study the impact of gate stacks on the electrical characteristics of Zn-diffused source In x Ga1- x As tunneling field-effect transistors (TFETs) with Al2O3 or HfO2/Al2O3 gate insulators. Ta and W gate electrodes are compared in terms of the interface trap density (D it) of InGaAs MOS interfaces. It is found that D it is lower at the W/HfO2/Al2O3 InGaAs MOS interface than at the Ta/HfO2/Al2O3 interface. The In0.53Ga0.47As TFET with a W/HfO2 (2.7 nm)/Al2O3 (0.3 nm) gate stack of 1.4-nm-thick capacitance equivalent thickness (CET) has a steep minimum subthreshold swing (SS) of 57 mV/dec, which is attributed to the thin CET and low D it. Also, the In0.53Ga0.47As (2.6 nm)/In0.67Ga0.33As (3.2 nm)/In0.53Ga0.47As (96.5 nm) quantum-well (QW) TFET supplemented with this 1.4-nm-thick CET gate stack exhibits a steeper minimum SS of 54 mV/dec and a higher on-current (I on) than those of the In0.53Ga0.47As TFET.

Trapping a 96° domain rotation in two distinct conformations by engineered disulfide bridges

PubMed Central

Schultz-Heienbrok, Robert; Maier, Timm; Sträter, Norbert

2004-01-01

Engineering disulfide bridges is a common technique to lock a protein movement in a defined conformational state. We have designed two double mutants of Escherichia coli 5′-nucleotidase to trap the enzyme in both an open (S228C, P513C) and a closed (P90C, L424C) conformation by the formation of disulfide bridges. The mutant proteins have been expressed, purified, and crystallized, to structurally characterize the designed variants. The S228C, P513C is a double mutant crystallized in two different crystal forms with three independent conformers, which differ from each other by a rotation of up to 12° of the C-terminal domain with respect to the N-terminal domain. This finding, as well as an analysis of the domain motion in the crystal, indicates that the enzyme still exhibits considerable residual domain flexibility. In the double mutant that was designed to trap the enzyme in the closed conformation, the structure analysis reveals an unexpected intermediate conformation along the 96° rotation trajectory between the open and closed enzyme forms. A comparison of the five independent conformers analyzed in this study shows that the domain movement of the variant enzymes is characterized by a sliding movement of the residues of the domain interface along the interface, which is in contrast to a classical closure motion where the residues of the domain interface move perpendicular to the interface. PMID:15215524

A tunable electron beam source using trapping of electrons in a density down-ramp in laser wakefield acceleration.

PubMed

Ekerfelt, Henrik; Hansson, Martin; Gallardo González, Isabel; Davoine, Xavier; Lundh, Olle

2017-09-25

One challenge in the development of laser wakefield accelerators is to demonstrate sufficient control and reproducibility of the parameters of the generated bunches of accelerated electrons. Here we report on a numerical study, where we demonstrate that trapping using density down-ramps allows for tuning of several electron bunch parameters by varying the properties of the density down-ramp. We show that the electron bunch length is determined by the difference in density before and after the ramp. Furthermore, the transverse emittance of the bunch is controlled by the steepness of the ramp. Finally, the amount of trapped charge depends both on the density difference and on the steepness of the ramp. We emphasize that both parameters of the density ramp are feasible to vary experimentally. We therefore conclude that this tunable electron accelerator makes it suitable for a wide range of applications, from those requiring short pulse length and low emittance, such as the free-electron lasers, to those requiring high-charge, large-emittance bunches to maximize betatron X-ray generation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawase, Kazumasa, E-mail: Kawase.Kazumasa@ak.MitsubishiElectric.co.jp; Motoya, Tsukasa; Uehara, Yasushi

Silicon dioxide (SiO{sub 2}) films formed by chemical vapor deposition (CVD) have been treated with Ar plasma excited by microwave. The changes of the mass densities, carrier trap densities, and thicknesses of the CVD-SiO{sub 2} films with the Ar plasma treatments were investigated. The mass density depth profiles were estimated with X-Ray Reflectivity (XRR) analysis using synchrotron radiation. The densities of carrier trap centers due to defects of Si-O bond network were estimated with X-ray Photoelectron Spectroscopy (XPS) time-dependent measurement. The changes of the thicknesses due to the oxidation of Si substrates were estimated with the XRR and XPS. Themore » mass densities of the CVD-SiO{sub 2} films are increased by the Ar plasma treatments. The carrier trap densities of the films are decreased by the treatments. The thicknesses of the films are not changed by the treatments. It has been clarified that the mass densification and defect restoration in the CVD-SiO{sub 2} films are caused by the Ar plasma treatments without the oxidation of the Si substrates.« less

Barnacles resist removal by crack trapping

PubMed Central

Hui, Chung-Yuen; Long, Rong; Wahl, Kathryn J.; Everett, Richard K.

2011-01-01

We study the mechanics of pull-off of a barnacle adhering to a thin elastic layer which is bonded to a rigid substrate. We address the case of barnacles having acorn shell geometry and hard, calcarious base plates. Pull-off is initiated by the propagation of an interface edge crack between the base plate and the layer. We compute the energy release rate of this crack as it grows along the interface using a finite element method. We also develop an approximate analytical model to interpret our numerical results and to give a closed-form expression for the energy release rate. Our result shows that the resistance of barnacles to interfacial failure arises from a crack-trapping mechanism. PMID:21208968

Effect of dielectric stoichiometry and interface chemical state on band alignment between tantalum oxide and platinum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lebedinskii, Yu. Yu.; National Research Nuclear University MEPhI; Chernikova, A. G.

2015-10-05

The tantalum oxide–platinum interface electronic properties determined by X-ray photoelectron spectroscopy are found to depend on the dielectric stoichiometry and platinum chemical state. We demonstrate the slow charging of the tantalum oxide in cases of Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces under the X-ray irradiation. This behavior is proposed to be related to the charge accumulation at oxygen vacancies induced traps. Based on the proposed methodology, we define the intrinsic conductive band offset (CBO) ∼1.3 eV (both for Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt) and CBO after the full saturation of the traps charging ∼0.5 eV, while the lastmore » one defines the energy position of charged traps below the bottom of conduction band. We demonstrate also the pining at the both Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces even in the “intrinsic” state, apparently induced by the presence of additional interfacial states. No shifts of Ta4f line and band alignment in over stoichiometric Ta{sub 2}O{sub 5+x}/Pt structure during X-ray irradiation, as well as the absence of pinning, resulting in increase of CBO up to 2.3 eV are found. This behavior is related to the PtO{sub 2} interfacing layer formation at Ta{sub 2}O{sub 5+x}/Pt, blocking the charging of the surface states and associated dipole formation.« less

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Djara, V.; Cherkaoui, K.; Negara, M. A.

2015-11-28

An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N{sub inv}) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I{sub d}-V{sub g}more » measurements enabled an accurate effective mobility vs N{sub inv} extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs.« less

Acoustic trapping of active matter

NASA Astrophysics Data System (ADS)

Takatori, Sho C.; de Dier, Raf; Vermant, Jan; Brady, John F.

2016-03-01

Confinement of living microorganisms and self-propelled particles by an external trap provides a means of analysing the motion and behaviour of active systems. Developing a tweezer with a trapping radius large compared with the swimmers' size and run length has been an experimental challenge, as standard optical traps are too weak. Here we report the novel use of an acoustic tweezer to confine self-propelled particles in two dimensions over distances large compared with the swimmers' run length. We develop a near-harmonic trap to demonstrate the crossover from weak confinement, where the probability density is Boltzmann-like, to strong confinement, where the density is peaked along the perimeter. At high concentrations the swimmers crystallize into a close-packed structure, which subsequently `explodes' as a travelling wave when the tweezer is turned off. The swimmers' confined motion provides a measurement of the swim pressure, a unique mechanical pressure exerted by self-propelled bodies.

Acoustic trapping of active matter

PubMed Central

Takatori, Sho C.; De Dier, Raf; Vermant, Jan; Brady, John F.

2016-01-01

Confinement of living microorganisms and self-propelled particles by an external trap provides a means of analysing the motion and behaviour of active systems. Developing a tweezer with a trapping radius large compared with the swimmers' size and run length has been an experimental challenge, as standard optical traps are too weak. Here we report the novel use of an acoustic tweezer to confine self-propelled particles in two dimensions over distances large compared with the swimmers' run length. We develop a near-harmonic trap to demonstrate the crossover from weak confinement, where the probability density is Boltzmann-like, to strong confinement, where the density is peaked along the perimeter. At high concentrations the swimmers crystallize into a close-packed structure, which subsequently ‘explodes' as a travelling wave when the tweezer is turned off. The swimmers' confined motion provides a measurement of the swim pressure, a unique mechanical pressure exerted by self-propelled bodies. PMID:26961816

Identifying the distinct features of geometric structures for hole trapping to generate radicals on rutile TiO₂(110) in photooxidation using density functional theory calculations with hybrid functional.

PubMed

Wang, Dong; Wang, Haifeng; Hu, P

2015-01-21

Using density functional theory calculations with HSE 06 functional, we obtained the structures of spin-polarized radicals on rutile TiO2(110), which is crucial to understand the photooxidation at the atomic level, and further calculate the thermodynamic stabilities of these radicals. By analyzing the results, we identify the structural features for hole trapping in the system, and reveal the mutual effects among the geometric structures, the energy levels of trapped hole states and their hole trapping capacities. Furthermore, the results from HSE 06 functional are compared to those from DFT + U and the stability trend of radicals against the number of slabs is tested. The effect of trapped holes on two important steps of the oxygen evolution reaction, i.e. water dissociation and the oxygen removal, is investigated and discussed.

Self-generated zonal flows in the plasma turbulence driven by trapped-ion and trapped-electron instabilities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drouot, T.; Gravier, E.; Reveille, T.

This paper presents a study of zonal flows generated by trapped-electron mode and trapped-ion mode micro turbulence as a function of two plasma parameters—banana width and electron temperature. For this purpose, a gyrokinetic code considering only trapped particles is used. First, an analytical equation giving the predicted level of zonal flows is derived from the quasi-neutrality equation of our model, as a function of the density fluctuation levels and the banana widths. Then, the influence of the banana width on the number of zonal flows occurring in the system is studied using the gyrokinetic code. Finally, the impact of themore » temperature ratio T{sub e}/T{sub i} on the reduction of zonal flows is shown and a close link is highlighted between reduction and different gyro-and-bounce-average ion and electron density fluctuation levels. This reduction is found to be due to the amplitudes of gyro-and-bounce-average density perturbations n{sub e} and n{sub i} gradually becoming closer, which is in agreement with the analytical results given by the quasi-neutrality equation.« less

Economic and Highly Effective Trap-Lure Combination to Monitor the Mexican Fruit Fly (Diptera: Tephritidae) at the Orchard Level.

PubMed

Lasa, R; Herrera, F; Miranda, E; Gómez, E; Antonio, S; Aluja, M

2015-08-01

Monitoring population levels of the Mexican fruit fly, Anastrepha ludens (Loew) (Diptera: Tephritidae), at the orchard level prior and during the fruit ripening period can result in significant savings in the costs of managing this pestiferous insect. Unfortunately, to date, no highly effective and economically viable trap is available to growers. To move toward this goal, trap-lure combinations were evaluated in trials performed in citrus orchards in Veracruz, Mexico. CeraTrap, an enzymatic hydrolyzed protein from pig intestinal mucose, was 3.6 times more attractive to A. ludens than the most commonly used bait of Captor (hydrolyzed protein and borax) when using Multilure traps. When several commercial traps were evaluated, the efficacy of a simple and inexpensive transparent polyethylene (PET) bottle with 10-mm lateral holes was similar to that of the costly Multilure trap when baited with CeraTrap and significantly more effective than a Multilure trap baited with Captor. PET bottles filled with Cera Trap, rebaited at 8-wk intervals, and tested in trials encompassing 72 ha of citrus groves, were significantly more effective than Multilure traps baited with Captor that need to be serviced weekly. In addition to this relevant finding, CeraTrap baited traps detected A. ludens at lower population densities and attracted a significantly higher number of flies at all densities when compared with Captor-baited traps. We conclude that CeraTrap represents a cost-effective and highly efficient bait that will enable us to pursue the goal of developing economic thresholds, a badly needed management tool for A. ludens. © The Authors 2015. Published by Oxford University Press on behalf of Entomological Society of America. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Evaluation of methyl eugenol and cue-lure traps with solid lure and insecticide dispensers for fruit fly monitoring and male annihilation in the Hawaii Areawide Pest Management Program.

PubMed

Vargas, Roger I; Mau, Ronald F L; Stark, John D; Piñero, Jaime C; Leblanc, Luc; Souder, Steven K

2010-04-01

Methyl eugenol (ME) and cue-lure (C-L) traps with solid lure dispensers were deployed in areas with low and high populations of oriental fruit fly, Bactrocera dorsalis (Hendel), and melon fly, Bactrocera cucurbitae (Coquillett), respectively. In low-density areas, standard Jackson traps or Hawaii Fruit Fly Areawide Pest Management (AWPM) traps with FT Mallet ME wafers impregnated with dimethyl dichloro-vinyl phosphate (DDVP) or AWPM traps with Scentry ME cones and vapor tape performed equally as well as standard Jackson traps with liquid ME/C-L and naled. Standard Jackson traps or AWPM traps with FT Mallet C-L wafers impregnated with DDVP or AWPM traps with Scentry C-L plugs with vapor tape performed equally as well as standard Jackson traps with a lure-naled solution. In high density areas, captures with traps containing FT Mallet wafers (ME and C-L) outperformed AWPM traps with Scentry cones and plugs (ME and C-L) with DDVP insecticidal strips over a 6-mo period. Captures of B. dorsalis and B. cucurbitae with wafers containing both ME and raspberry ketone (FT Mallet MC) were equivalent to those containing separate lures. From a worker safety and convenience standpoint, FT Mallet ME and C-L wafers with DDVP or Scentry plugs, with or without DDVP vapor tape, are more convenient and safer to handle than standard liquid insecticide formulations used for monitoring and male annihilation programs in Hawaii, and for detections traps used on the U.S. mainland. Furthermore, the FT Mallet MC wafer might be used in a single trap in place of two separate traps for detection of both ME and C-L responding fruit flies.

Effects of trap type, placement and ash distribution on emerald ash borer captures in a low density site

Treesearch

Deborah G. McCullough; Nathan W. Siegert; Therese M. Poland; Steven J. Pierce; Su Zie Ahn

2011-01-01

Effective methods for early detection of newly established, low density emerald ash borer (Agrilus planipennis Fairmaire) infestations are critically needed in North America. We assessed adult A. planipennis captures on four types of traps in a 16-ha site in central Michigan. The site was divided into 16 blocks, each comprised of...

Multi-state comparison of trapping tools at sites with low emerald ash borer density

Treesearch

Jordan M. Marshall; Andrew J. Storer; Ivich Fraser; Victor C. Mastro

2011-01-01

Developing tools for detecting emerald ash borer (EAB) (Agrilus planipennis Fairmaire) has been a major focus of research efforts in recent years as the search for an effective detection survey methodology continues. The objectives of this study were to (1) compare the effectiveness of EAB detection trapping tools at low density sites in Indiana,...

Electrical characterization of thin nanoscale SiOx layers grown on plasma hydrogenated silicon

NASA Astrophysics Data System (ADS)

Halova, E.; Kojuharova, N.; Alexandrova, S.; Szekeres, A.

2018-03-01

We analyzed the electrical characteristics of MOS structures with a SiOx layer grown on Si treated in plasma without heating. The hysteresis effect observed indicates the presence of traps spatially distributed into the oxide near the interface. The shift and the shape of the curves reveal a small oxide charge and low leakage currents, i.e. a high-quality dielectric layer. The generalized C-V curve was generated by applying the two-frequency methods on the C-V and G-V characteristics at frequencies in the range from 1 kHz to 300 kHz and by accounting for the series resistance and the leakage through the oxide layer. The energy spectra of the interface traps were calculated by comparing the experimental and the ideal theoretical C-V curves. The spectra showed the presence of interface traps with localized energy levels in the Si bandgap. These conclusions correlate well with the results on this oxide’s mechanical stress level, composition and Si-O ring structure, as well as on the interfacial region composition, obtained by our previous detailed multi-angle spectral ellipsometric studies. The ellipsometric data and the capacitance in strong accumulation of the C-V curves were used to calculate the thickness and the dielectric constants of the oxide layers.

Enrichment of viable bacteria in a micro-volume by free-flow electrophoresis.

PubMed

Podszun, Susann; Vulto, Paul; Heinz, Helene; Hakenberg, Sydney; Hermann, Carsten; Hankemeier, Thomas; Urban, Gerald A

2012-02-07

Macro- to micro-volume concentration of viable bacteria is performed in a microfluidic chip. The enrichment principle is based on free flow electrophoresis and is demonstrated for Gram positive bacteria. Bacteria from a suspension flow are trapped on a gel interface that separates the trapping location from integrated actuation electrodes in order to enable non-destructive trapping. The microfluidic chip contains integrated electrolytic gas expulsion structures and phaseguides for gel and liquid handling. Trapping efficiency is systematically optimized to reach 25 times the initial concentration from a theoretical maximum of 30. Finally, enrichment from analytically relevant concentrations down to 3 × 10(2) colony forming units per millilitre is demonstrated with a trapping efficiency of 80% which represents the most important parameter in enrichment.

Electron Trapping and Charge Transport by Large Amplitude Whistlers

NASA Technical Reports Server (NTRS)

Kellogg, P. J.; Cattell, C. A.; Goetz, K.; Monson, S. J.; Wilson, L. B., III

2010-01-01

Trapping of electrons by magnetospheric whistlers is investigated using data from the Waves experiment on Wind and the S/WAVES experiment on STEREO. Waveforms often show a characteristic distortion which is shown to be due to electrons trapped in the potential of the electrostatic part of oblique whistlers. The density of trapped electrons is significant, comparable to that of the unperturbed whistler. Transport of these trapped electrons to new regions can generate potentials of several kilovolts, Trapping and the associated potentials may play an important role in the acceleration of Earth's radiation belt electrons.

Role of water mediated interactions in protein-protein recognition landscapes.

PubMed

Papoian, Garegin A; Ulander, Johan; Wolynes, Peter G

2003-07-30

The energy landscape picture of protein folding and binding is employed to optimize a number of pair potentials for direct and water-mediated interactions in protein complex interfaces. We find that water-mediated interactions greatly complement direct interactions in discriminating against various types of trap interactions that model those present in the cell. We highlight the context dependent nature of knowledge-based binding potentials, as contrasted with the situation for autonomous folding. By performing a Principal Component Analysis (PCA) of the corresponding interaction matrixes, we rationalize the strength of the recognition signal for each combination of the contact type and reference trap states using the differential in the idealized "canonical" amino acid compositions of native and trap layers. The comparison of direct and water-mediated contact potential matrixes emphasizes the importance of partial solvation in stabilizing charged groups in the protein interfaces. Specific water-mediated interresidue interactions are expected to influence significantly the kinetics as well as thermodynamics of protein association.

Characterisation of retention properties of charge-trapping memory cells at low temperatures

NASA Astrophysics Data System (ADS)

Yurchuk, E.; Bollmann, J.; Mikolajick, T.

2009-09-01

The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more "shallow" traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

NASA Astrophysics Data System (ADS)

Zhang, Hongpeng; Jia, Renxu; Lei, Yuan; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

2018-02-01

In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal-oxide-semiconductor (MOS) capacitors under positive and negative biases are investigated using the current-voltage (I-V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant under positively biased electric fields of 0.37-2.19 MV cm-1, and the extracted Schottky barrier height ranged from 0.88 eV to 0.91 eV at various temperatures. The Poole-Frenkel emission dominates under negatively biased fields of 1.92-4.83 MV cm-1, and the trap energy levels are from 0.71 eV to 0.77 eV at various temperatures. The conduction band offset (ΔE c) of HfO2/β-Ga2O3 is extracted to be 1.31  ±  0.05 eV via x-ray photoelectron spectroscopy, while a large negative sheet charge density of 1.04  ×  1013 cm-2 is induced at the oxide layer and/or HfO2/β-Ga2O3 interface. A low C-V hysteresis of 0.76 V, low interface state density (D it) close to 1  ×  1012 eV-1 cm-2, and low leakage current density of 2.38  ×  10-5 A cm-2 at a gate voltage of 7 V has been obtained, suggesting the great electrical properties of HfO2/β-Ga2O3 MOSCAP. According to the above analysis, ALD-HfO2 is an attractive candidate for high voltage β-Ga2O3 power devices.

The '06 trap trees in '07

Treesearch

Andrea C. Anulewicz; Deborah G. McCullough; Therese M. Poland; David Cappaert

2008-01-01

To date, use of girdled trap trees remain the most effective method employed by regulatory and resource management agencies for detecting low-density populations of emerald ash borer (EAB), Agrilus planipennis Fairmaire. Locating suitable trees can be difficult, and felling and debarking trap trees is expensive. Alternative options for EAB detection...

The excitation mechanism of btp2 Ir(acac) in CBP host.

PubMed

Xiao-Bo, Zhang; Fu-Xiang, Wei

2017-05-01

Whether bis(2-(2'-benzo[4,5-α]thienyl)pyridinato-N,C3')iridium(acetylacetonate) (btp 2 Ir(acac)) emission comes from carrier trapping and/or energy transfer, when doped in the 4,4'-bis(N-carbazolyl)biphenyl (CBP) host in organic light-emitting devices, is not clear; therefore, the btp 2 Ir(acac) emission in CBP hosts was studied. In the red-doped device, both N,N'-bis(1-naphthyl)-N,N'-diphenyl-1.1'-bipheny1-4-4'-diamine (NPB) and (1,1'-biphenyl-4'-oxy)bis(8-hydroxy-2-methylquinolinato)-aluminum (BAlq) emission appeared, which illustrated that CBP excitons cannot be formed at two emissive layer (EML) interfaces in the device. In the co-doped devices, NPB and BAlq emissions disappear and 1,4-bis[2-(3-N-ethylcarbazoryl)vinyl]benzene (BCzVB) emission appears, illustrating the formation of CBP excitons at two EML interfaces in these devices. The reason for this difference was analyzed and it was found that holes in the NPB layer could be made directly into the CBP host in the EML interface of the red-doped device. In contrast, holes were injected into CBP host via the btp 2 Ir(acac)/BCzVB dopants in the co-doped devices, which facilitated hole injection from the NPB layer to the EML, leading to the formation of CBP excitons at two EML interfaces in the co-doped devices. Therefore, btp 2 Ir(acac) emission was caused by carrier trapping in the red-doped device, while, in the co-doped devices, it resulted from both carrier trapping and energy transfer from the CBP. Furthermore, it was revealed that the carrier trapping mechanism is less efficient than the energy transfer mechanism for btp 2 Ir(acac) excitation in co-doped devices. In summary, our results clarified the excitation mechanism of btp 2 Ir(acac) in the CBP host. Copyright © 2016 John Wiley & Sons, Ltd.

Particle Capture Devices and Methods of Use Thereof

NASA Technical Reports Server (NTRS)

Voldman, Joel (Inventor); Skelley, Alison M. (Inventor); Kirak, Oktay (Inventor); Jaenisch, Rudolf (Inventor)

2015-01-01

The present invention provides a device and methods of use thereof in microscale particle capturing and particle pairing. This invention provides particle patterning device, which mechanically traps individual particles within first chambers of capture units, transfer the particles to second chambers of opposing capture units, and traps a second type of particle in the same second chamber. The device and methods allow for high yield assaying of trapped cells, high yield fusion of trapped, paired cells, for controlled binding of particles to cells and for specific chemical reactions between particle interfaces and particle contents. The device and method provide means of identification of the particle population and a facile route to particle collection.

Boll weevil (Coleoptera: Curculionidae) response to and volatilization rates of grandlure when combined with varying doses of eugenol in the extended-life pheromone lure.

PubMed

Armstrong, J S

2010-04-01

Boll weevil, Anthonomus grandis grandis Boheman (Coleoptera: Curculionidae), trapping and pheromone quantitative analysis of extended-life pheromone lures manufactured with 0, 10, 20, and 30 mg of eugenol was conducted in the Rio Grande Valley of Texas under spring and summer conditions. Boll weevils responded positively to eugenol on one of 12 trapping weeks when densities were high, but when densities were low (<2 weevils trap(-1) wk(-1)), there were no significant differences in captures for any dosage of eugenol offered in a standard boll weevil trap. Weekly grandlure volatilization did not differ by eugenol dose but was significantly different when evaluated over three different trapping periods and by week within trapping period due to differences in ambient temperature. The amount of grandlure that remained after 4 wk in moderate temperatures of spring was 13.1 +/- 0.19 mg (55.7% of original 25 mg of content) compared with 5.5 +/- 0.15 mg remaining (22.8% of original 25 mg content) after for 4 wk in summer heat. Weekly volatilization of grandlure for the summer trapping period was 9.8 +/- 0.32 mg for the first week, declining steadily to 1.0 +/- 0.09 mg by the fourth week of age. The data indicate that at high summer temperatures >30 degrees C, accumulative grandlure loss per week may be too high, leaving too little residual grandlure to effectively attract boll weevils at the end of 3 wk of trapping. Eugenol plays no role in reserving or encouraging the release of grandlure, or in increasing boll weevil captures when boll weevil densities are low.

Camera-trap study of ocelot and other secretive mammals in the northern Pantanal

USGS Publications Warehouse

Trolle, M.; Kery, M.

2005-01-01

Reliable information on abundance of the ocelot (Leopardus pardalis) is scarce. We conducted the first camera-trap study in the northern part of the Pantanal wetlands of Brazil, one of the wildlife hotspots of South America. Using capture-recapture analysis, we estimated a density of 0.112 independent individuals per km2 (SE 0.069). We list other mammals recorded with camera traps and show that camera-trap placement on roads or on trails has striking effects on camera-trapping rates.

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

PubMed Central

Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J.

2016-01-01

Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack. PMID:27279454

Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

NASA Astrophysics Data System (ADS)

Wu, Li-Fan; Zhang, Yu-Ming; Lv, Hong-Liang; Zhang, Yi-Men

2016-10-01

Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37 × 10-6 A/cm2 and 3.22 × 10-6 A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Q ot) value and the interface state density (D it). Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).

Numerical simulation of the hydrodynamical combustion to strange quark matter in the trapped neutrino regime

NASA Astrophysics Data System (ADS)

Ouyed, Amir; Ouyed, Rachid; Jaikumar, Prashanth

2018-02-01

We simulate and study the microphysics of combustion (flame burning) of two flavored quark matter (u,d) to three flavored quark matter (u,d,s) in a trapped neutrino regime applicable to conditions prevailing in a hot proto-neutron star. The reaction-diffusion-advection equations for (u,d) to (u,d,s) combustion are coupled with neutrino transport, which is modeled through a flux-limited diffusion scheme. The flame speed is proportional to initial lepton fraction because of the release of electron chemical potential as heat, and reaches a steady-state burning speed of (0.001-0.008)c. We find that the burning speed is ultimately driven by the neutrino pressure gradient, given that the pressure gradient induced by quarks is opposed by the pressure gradients induced by electrons. This suggests, somewhat counter-intuitively, that the pressure gradients that drive the interface are controlled primarily by leptonic weak decays rather than by the quark Equation of State (EOS). In other words, the effects of the leptonic weak interaction, including the corresponding weak decay rates and the EOS of electrons and neutrinos, are at least as important as the uncertainties related to the EOS of high density matter. We find that for baryon number densities nB ≤ 0.35 fm-3, strong pressure gradients induced by leptonic weak decays drastically slow down the burning speed, which is thereafter controlled by the much slower burning process driven by backflowing downstream matter. We discuss the implications of our findings to proto-neutron stars.

Defect-related degradation of III-V/Silicon 1.55 μm DBR laser diodes

NASA Astrophysics Data System (ADS)

Buffolo, Matteo; Meneghini, Matteo; De Santi, Carlo; Trivellin, Nicola; Davenport, Michael L.; Bowers, John E.; Meneghesso, Gaudenzio; Zanoni, Enrico

2018-02-01

This paper reports on an extensive investigation on the degradation mechanisms that may limit the long term reliability of heterogeneous III-V/Silicon DBR laser diodes for integrated telecommunication applications in the 1.55 μm window. The devices under test, aged for up to 500 hours under different bias conditions, showed a gradual variation of both optical (L-I) and electrical (I-V, C-V) characteristics. In particular, the laser diodes exhibited an increase in the threshold current, a decrease of the turn-on voltage and an increase in the apparent charge density within the space-charge region, which was extrapolated from C-V measurements. For longer stress times, these two latter processes were found to be well correlated with the worsening of the optical parameters, which suggests that degradation occurred due to an increase in the density of defects within the active region, with consequent decrease in the non-radiative (SRH) lifetime. This conclusion is also supported by the fact that during stress the apparent charge profiles indicated a re-distribution of charge within the junction. A preliminary investigation on the physical origin of the defects responsible for degradation was carried out by DLTS measurements, which revealed the presence of five different deep levels, with a main trap located around 0.43 eV above the valence band energy. This trap was found to be compatible with an interface defect located between the In0.53AlxGa0.47-xAs SCH region and the InP layer.

Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N-channel depletion MOSFETs

NASA Astrophysics Data System (ADS)

Gnana Prakash, A. P.; Pradeep, T. M.; Hegde, Vinayakprasanna N.; Pushpa, N.; Bajpai, P. K.; Patel, S. P.; Trivedi, Tarkeshwar; Bhushan, K. G.

2017-12-01

NPN transistors and N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 5 MeV protons and 60Co gamma radiation in the dose ranging from 1 Mrad(Si) to 100 Mrad(Si). The different electrical characteristics of the NPN transistor such as Gummel characteristics, excess base current (ΔIB), dc current gain (hFE), transconductance (gm), displacement damage factor (K) and output characteristics were studied as a function of total dose. The different electrical characteristics of N-channel MOSFETs such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot), transconductance (gm), mobility (µ) and drain saturation current (IDSat) were studied systematically before and after irradiation in the same dose ranges. A considerable increase in the base current (IB) and decrease in the hFE, gm and collector saturation current (ICSat) were observed after irradiation in the case of the NPN transistor. In the N-channel MOSFETs, the ΔNit and ΔNot were found to increase and Vth, gm, µ and IDSat were found to decrease with increase in the radiation dose. The 5 MeV proton irradiation results of both the NPN transistor and N-channel MOSFETs were compared with 60Co gamma-irradiated devices in the same dose ranges. It was observed that the degradation in 5 MeV proton-irradiated devices is more when compared with the 60Co gamma-irradiated devices at higher total doses.

Hydrodynamic trapping for rapid assembly and in situ electrical characterization of droplet interface bilayer arrays

DOE PAGES

Nguyen, Mary -Anne; Srijanto, Bernadeta; Collier, C. Patrick; ...

2016-08-02

The droplet interface bilayer (DIB) is a modular technique for assembling planar lipid membranes between water droplets in oil. The DIB method thus provides a unique capability for developing digital, droplet-based membrane platforms for rapid membrane characterization, drug screening and ion channel recordings. This paper demonstrates a new, low-volume microfluidic system that automates droplet generation, sorting, and sequential trapping in designated locations to enable the rapid assembly of arrays of DIBs. The channel layout of the device is guided by an equivalent circuit model, which predicts that a serial arrangement of hydrodynamic DIB traps enables sequential droplet placement and minimizesmore » the hydrodynamic pressure developed across filled traps to prevent squeeze-through of trapped droplets. Furthermore, the incorporation of thin-film electrodes fabricated via evaporation metal deposition onto the glass substrate beneath the channels allows for the first time in situ, simultaneous electrical interrogation of multiple DIBs within a sealed device. Combining electrical measurements with imaging enables measurements of membrane capacitance and resistance and bilayer area, and our data show that DIBs formed in different trap locations within the device exhibit similar sizes and transport properties. Simultaneous, single channel recordings of ion channel gating in multiple membranes are obtained when alamethicin peptides are incorporated into the captured droplets, qualifying the thin-film electrodes as a means for measuring stimuli-responsive functions of membrane-bound biomolecules. Furthermore, this novel microfluidic-electrophysiology platform provides a reproducible, high throughput method for performing electrical measurements to study transmembrane proteins and biomembranes in low-volume, droplet-based membranes.« less

Hydrodynamic trapping for rapid assembly and in situ electrical characterization of droplet interface bilayer arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Mary -Anne; Srijanto, Bernadeta; Collier, C. Patrick

The droplet interface bilayer (DIB) is a modular technique for assembling planar lipid membranes between water droplets in oil. The DIB method thus provides a unique capability for developing digital, droplet-based membrane platforms for rapid membrane characterization, drug screening and ion channel recordings. This paper demonstrates a new, low-volume microfluidic system that automates droplet generation, sorting, and sequential trapping in designated locations to enable the rapid assembly of arrays of DIBs. The channel layout of the device is guided by an equivalent circuit model, which predicts that a serial arrangement of hydrodynamic DIB traps enables sequential droplet placement and minimizesmore » the hydrodynamic pressure developed across filled traps to prevent squeeze-through of trapped droplets. Furthermore, the incorporation of thin-film electrodes fabricated via evaporation metal deposition onto the glass substrate beneath the channels allows for the first time in situ, simultaneous electrical interrogation of multiple DIBs within a sealed device. Combining electrical measurements with imaging enables measurements of membrane capacitance and resistance and bilayer area, and our data show that DIBs formed in different trap locations within the device exhibit similar sizes and transport properties. Simultaneous, single channel recordings of ion channel gating in multiple membranes are obtained when alamethicin peptides are incorporated into the captured droplets, qualifying the thin-film electrodes as a means for measuring stimuli-responsive functions of membrane-bound biomolecules. Furthermore, this novel microfluidic-electrophysiology platform provides a reproducible, high throughput method for performing electrical measurements to study transmembrane proteins and biomembranes in low-volume, droplet-based membranes.« less

Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors

DTIC Science & Technology

2011-03-01

Figures Figure Page 1. Conceptual illustration of the creation of electron-hole pairs and displacement damage in a n -type silicon metal-oxide-silicon...Illustration of the effect, in a CV plot, of oxide trapped charge for a hypothetical n -type device...8 5. Illustration of the effect, in a CV plot, of interface trapped charge for a hypothetical n -type device

Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Zhao, Sheng-Lei; Xue, Jun-Shuai; Zhu, Jie-Jie; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-12-01

In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states. Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

NASA Astrophysics Data System (ADS)

Han, Ki-Lim; Ok, Kyung-Chul; Cho, Hyeon-Su; Oh, Saeroonter; Park, Jin-Seong

2017-08-01

We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 °C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 × 1021 cm-3 is beneficial to reliability. However, the multi-layered buffer device annealed at 350 °C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 × 1021 cm-3.

The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang; Haas, Simon; Pernstich, Kurt; Mathis, Thomas; Batlogg, Bertram

2010-03-01

Our study shows that it is possible to reach one of the ultimate goals of organic electronics: organic field-effect transistors can be produced with trap densities as low as in the bulk of single crystals. Several analytical methods to calculate the spectral density of localized states in the band gap (trap DOS) from measured data were used to clarify, if the different methods lead to similar results. We then compared quantitatively trap DOS information from the literature, correcting for differences due to different calculation methods. In the bulk of single crystals the trap DOS is lower by several orders of magnitude than in thin films. The compilation of all data strongly suggests that structural defects at grain boundaries are the main cause of ``fast'' traps in TFT's made with vacuum-evaporated pentacene. For high-performance transistors made with small molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric. We will discuss to what degree band broadening due to the thermal fluctuations of the intermolecular transfer integral is reflected in the trap DOS very close (<0.15 eV) to the mobility edge.

HoloHands: games console interface for controlling holographic optical manipulation

NASA Astrophysics Data System (ADS)

McDonald, C.; McPherson, M.; McDougall, C.; McGloin, D.

2012-10-01

The increased application of holographic optical manipulation techniques within the life sciences has sparked the development of accessible interfaces for control of holographic optical tweezers. Of particular interest are those that employ familiar, commercially available technologies. Here we present the use of a low cost games console interface, the Microsoft Kinect for the control of holographic optical tweezers and a study into the effect of using such a system upon the quality of trap generated.

Energy of adhesion of human T cells to adsorption layers of monoclonal antibodies measured by a film trapping technique.

PubMed Central

Ivanov, I B; Hadjiiski, A; Denkov, N D; Gurkov, T D; Kralchevsky, P A; Koyasu, S

1998-01-01

A novel method for studying the interaction of biological cells with interfaces (e.g., adsorption monolayers of antibodies) is developed. The method is called the film trapping technique because the cell is trapped within an aqueous film of equilibrium thickness smaller than the cell diameter. A liquid film of uneven thickness is formed around the trapped cell. When observed in reflected monochromatic light, this film exhibits an interference pattern of concentric bright and dark fringes. From the radii of the fringes one can restore the shape of interfaces and the cell. Furthermore, one can calculate the adhesive energy between the cell membrane and the aqueous film surface (which is covered by a layer of adsorbed proteins and/or specific ligands), as well as the disjoining pressure, representing the force of interaction per unit area of the latter film. The method is applied to two human T cell lines: Jurkat and its T cell receptor negative (TCR-) derivative. The interaction of these cells with monolayers of three different monoclonal antibodies adsorbed at a water-air interface is studied. The results show that the adhesive energy is considerable (above 0.5 mJ/m2) when the adsorption monolayer contains antibodies acting as specific ligands for the receptors expressed on the cell surface. In contrast, the adhesive energy is close to zero in the absence of such a specific ligand-receptor interaction. In principle, the method can be applied to the study of the interaction of a variety of biological cells (B cells, natural killer cells, red blood cells, etc.) with adsorption monolayers of various biologically active molecules. In particular, film trapping provides a tool for the gentle micromanipulation of cells and for monitoring of processes (say the activation of a T lymphocyte) occurring at the single-cell level. PMID:9649417

Submillikelvin Dipolar Molecules in a Radio-Frequency Magneto-Optical Trap.

PubMed

Norrgard, E B; McCarron, D J; Steinecker, M H; Tarbutt, M R; DeMille, D

2016-02-12

We demonstrate a scheme for magneto-optically trapping strontium monofluoride (SrF) molecules at temperatures one order of magnitude lower and phase space densities 3 orders of magnitude higher than obtained previously with laser-cooled molecules. In our trap, optical dark states are destabilized by rapidly and synchronously reversing the trapping laser polarizations and the applied magnetic field gradient. The number of molecules and trap lifetime are also significantly improved from previous work by loading the trap with high laser power and then reducing the power for long-term trapping. With this procedure, temperatures as low as 400  μK are achieved.

Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

NASA Astrophysics Data System (ADS)

Kim, Chang-Hyun; Sung, Sujin; Yoon, Myung-Han

2016-09-01

Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation.

IGDS/TRAP Interface Program (ITIP). Detailed Design Specification (DDS). [network flow diagrams for coal gasification studies

NASA Technical Reports Server (NTRS)

Jefferys, S.; Johnson, W.; Lewis, R.; Rich, R.

1981-01-01

The software modules which comprise the IGDS/TRAP Interface Program are described. A hierarchical input processing output (HIPO) chart for each user command is given. The description consists of: (1) function of the user command; (2) calling sequence; (3) moduls which call this use command; (4) modules called by this user command; (5) IGDS commands used by this user command; and (6) local usage of global registers. Each HIPO contains the principal functions performed within the module. Also included with each function are a list of the inputs which may be required to perform the function and a list of the outputs which may be created as a result of performing the function.

Adsorption energies of poly(ethylene oxide)-based surfactants and nanoparticles on an air-water surface.

PubMed

Zell, Zachary A; Isa, Lucio; Ilg, Patrick; Leal, L Gary; Squires, Todd M

2014-01-14

The self-assembly of polymer-based surfactants and nanoparticles on fluid-fluid interfaces is central to many applications, including dispersion stabilization, creation of novel 2D materials, and surface patterning. Very often these processes involve compressing interfacial monolayers of particles or polymers to obtain a desired material microstructure. At high surface pressures, however, even highly interfacially active objects can desorb from the interface. Methods of directly measuring the energy which keeps the polymer or particles bound to the interface (adsorption/desorption energies) are therefore of high interest for these processes. Moreover, though a geometric description linking adsorption energy and wetting properties through the definition of a contact angle can be established for rigid nano- or microparticles, such a description breaks down for deformable or aggregating objects. Here, we demonstrate a technique to quantify desorption energies directly, by comparing surface pressure-density compression measurements using a Wilhelmy plate and a custom-microfabricated deflection tensiometer. We focus on poly(ethylene oxide)-based polymers and nanoparticles. For PEO-based homo- and copolymers, the adsorption energy of PEO chains scales linearly with molecular weight and can be tuned by changing the subphase composition. Moreover, the desorption surface pressure of PEO-stabilized nanoparticles corresponds to the saturation surface pressure for spontaneously adsorbed monolayers, yielding trapping energies of ∼10(3) k(B)T.

Charge carrier trapping and acoustic phonon modes in single CdTe nanowires.

PubMed

Lo, Shun Shang; Major, Todd A; Petchsang, Nattasamon; Huang, Libai; Kuno, Masaru K; Hartland, Gregory V

2012-06-26

Semiconductor nanostructures produced by wet chemical synthesis are extremely heterogeneous, which makes single particle techniques a useful way to interrogate their properties. In this paper the ultrafast dynamics of single CdTe nanowires are studied by transient absorption microscopy. The wires have lengths of several micrometers and lateral dimensions on the order of 30 nm. The transient absorption traces show very fast decays, which are assigned to charge carrier trapping into surface defects. The time constants vary for different wires due to differences in the energetics and/or density of surface trap sites. Measurements performed at the band edge compared to the near-IR give slightly different time constants, implying that the dynamics for electron and hole trapping are different. The rate of charge carrier trapping was observed to slow down at high carrier densities, which was attributed to trap-state filling. Modulations due to the fundamental and first overtone of the acoustic breathing mode were also observed in the transient absorption traces. The quality factors for these modes were similar to those measured for metal nanostructures, and indicate a complex interaction with the environment.

Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

NASA Astrophysics Data System (ADS)

Otani, Yohei; Itayama, Yasuhiro; Tanaka, Takuo; Fukuda, Yukio; Toyota, Hiroshi; Ono, Toshiro; Mitsui, Minoru; Nakagawa, Kiyokazu

2007-04-01

The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures with a 7-nm-thick tantalum pentaoxide (Ta2O5)/2-nm-thick germanium nitride (GeNx) gate insulator stack by electron-cyclotron-resonance plasma nitridation and sputtering deposition. They found that pure GeNx ultrathin layers can be formed by the direct plasma nitridation of the Ge surface without substrate heating. X-ray photoelectron spectroscopy revealed no oxidation of the GeNx layer after the Ta2O5 sputtering deposition. The fabricated MIS capacitor with a capacitance equivalent thickness of 4.3nm showed excellent leakage current characteristics. The interface trap density obtained by the modified conductance method was 4×1011cm-2eV-1 at the midgap.

Ideal sinks are not always ideal. Radiation damage accumulation in nanocomposites

DOE PAGES

Uberuaga, Blas Pedro; Choudhury, Samrat; Caro, Alfredo

2014-11-27

Designing radiation tolerant materials is one of the primary challenges associated with advanced nuclear energy systems. One attractive route that has received much attention world-wide is to introduce a high density of sinks, often in the form of interfaces or secondary phases. Here, we develop a simple model of such nanocomposites and examine the ramifications of various factors on the overall radiation stability of the material. In particular, we determine how the distribution of secondary phases, the relative sink strength of those phases, and the irradiation temperature influence the radiation tolerance of the matrix. We find that the best scenariomore » is one in which the sinks have intermediate strength, transiently trapping defects before releasing them back into the matrix.This provides new insight into the optimal properties of nanocomposites for radiation damage environments.« less

Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics

PubMed Central

Henkel, C.; Abermann, S.; Bethge, O.; Pozzovivo, G.; Klang, P.; Stöger-Pollach, M.; Bertagnolli, E.

2011-01-01

Schottky barrier SOI-MOSFETs incorporating a La2O3/ZrO2 high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 1011 eV−1 cm−2, a low subthreshold slope of 70-80 mV/decade, and an ION/IOFF current ratio greater than 2 × 106 are obtained. PMID:21461054

Fingering instabilities and pattern formation in a two-component dipolar Bose-Einstein condensate

NASA Astrophysics Data System (ADS)

Xi, Kui-Tian; Byrnes, Tim; Saito, Hiroki

2018-02-01

We study fingering instabilities and pattern formation at the interface of an oppositely polarized two-component Bose-Einstein condensate with strong dipole-dipole interactions in three dimensions. It is shown that the rotational symmetry is spontaneously broken by fingering instability when the dipole-dipole interactions are strengthened. Frog-shaped and mushroom-shaped patterns emerge during the dynamics due to the dipolar interactions. We also demonstrate the spontaneous density modulation and domain growth of a two-component dipolar BEC in the dynamics. Bogoliubov analyses in the two-dimensional approximation are performed, and the characteristic lengths of the domains are estimated analytically. Patterns resembling those in magnetic classical fluids are modulated when the number ratio of atoms, the trap ratio of the external potential, or tilted polarization with respect to the z direction is varied.

Anomalous threshold voltage change by 2 MeV electron irradiation at 100 °C in deep submicron metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Hayama, K.; Ohyama, H.; Simoen, E.; Rafí, J. M.; Mercha, A.; Claeys, C.

2004-04-01

The degradation of the electrical properties of deep submicron metal-oxide-semiconductor field-effect transistors (MOSFETs) by 2 MeV electron irradiation at high temperatures was studied. The irradiation temperatures were 30, 100, 150 and 200 °C, and the fluence was fixed at 1015e/cm2. For most experimental conditions, the threshold voltage (VT) is observed to reduce in absolute value both for n- and p-MOSFETs. This reduction is most pronounced at 100 °C, as at this irradiation temperature, the radiation-induced density of interface traps is highest. It is proposed that hydrogen neutralization of the dopants in the substrate plays a key role, whereby the hydrogen is released from the gate by the 2 MeV electrons.

Coupled gamma/alpha phase transformations in low-carbon steels

NASA Astrophysics Data System (ADS)

Mizutani, Yasushi

Since steels have been the most prevalently utilized materials for many years, the desire for steels with low alloying components with a well-balanced combination of high strength and toughness is increasing. Low carbon steels consisting of bainitic microstructures are ideally suited to meeting such technological and economic requirements. Thus it is extremely important to fully clarify the mechanism of bainite formation in order to produce this type of engineering steel by optimized alloy and process design. This research focuses on understanding the mechanism of coupled displacive/diffusional gamma/alpha transformation in low-carbon steels including bainitic and martensitic transformation, and establishing a more comprehensive and physically rational computational model for predictive control of coupled gamma/alpha transformation phenomena. Models for coupled gamma/alpha phase transformation proposed in this study are based on a mechanistic and unified theory and the following assumptions: (1) The energy dissipation due to interface motion can be linearly combined with the energy dissipation due to carbon diffusion. (2) The carbon concentrations at the interface in both gamma and alpha phases are constrained by an interface solute trapping law. (3) Interface motion during nucleation is also governed by the carbon diffusion field velocity. (4) The response function of glissile interface motion can be expressed in the form of thermally activated dislocation glide. In contrast to the conventional semi-empirical models of the previous literature, the computational model proposed in this study is demonstrated to successfully provide a comprehensive and quantitative prediction of the effects of temperature, composition, microstructure, and the interactions among them. This includes the effects of substitutional solutes, morphology of the parent gamma phase, density of nucleation sites, temperature dependent variation of flow stress of matrix, and dynamic recovery of forest dislocations on the kinetics of coupled gamma/alpha phase transformation.

Effect of Thermospheric Neutral Density upon Inner Trapped-belt Proton Flux

NASA Technical Reports Server (NTRS)

Wilson, Thomas L.; Lodhi, M. A. K.; Diaz, Abel B.

2007-01-01

We wish to point out that a secular change in the Earth's atmospheric neutral density alters charged-particle lifetime in the inner trapped radiation belts, in addition to the changes recently reported as produced by greenhouse gases. Heretofore, changes in neutral density have been of interest primarily because of their effect on the orbital drag of satellites. We extend this to include the orbital lifetime of charged particles in the lower radiation belts. It is known that the charged-belt population is coupled to the neutral density of the atmosphere through changes induced by solar activity, an effect produced by multiple scattering off neutral and ionized atoms along with ionization loss in the thermosphere where charged and neutral populations interact. It will be shown here that trapped-belt flux J is bivariant in energy E and thermospheric neutral density , as J(E,rho). One can conclude that proton lifetimes in these belts are also directly affected by secular changes in the neutral species populating the Earth s thermosphere. This result is a consequence of an intrinsic property of charged-particle flux, that flux is not merely a function of E but is dependent upon density rho when a background of neutrals is present.