Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer

NASA Astrophysics Data System (ADS)

Greene, Andrew; Madisetti, Shailesh; Nagaiah, Padmaja; Yakimov, Michael; Tokranov, Vadim; Moore, Richard; Oktyabrsky, Serge

2012-12-01

The highly reactive GaSb surface was passivated with a thin InAs layer to limit interface trap state density (Dit) at the III-V/high-k oxide interface. This InAs surface was subjected to various cleaning processes to effectively reduce native oxides before atomic layer deposition (ALD). Ammonium sulfide pre-cleaning and trimethylaluminum/water ALD were used in conjunction to provide a clean interface and annealing in forming gas (FG) at 350 °C resulted in an optimized fabrication for n-GaSb/InAs/high-k gate stacks. Interface trap density, Dit ≈ 2-3 × 1012 cm-2eV-1 resided near the n-GaSb conductance band which was extracted and compared with three different methods. Conductance-voltage-frequency plots showed efficient Fermi level movement and a sub-threshold slope of 200 mV/dec. A composite high-k oxide process was also developed using ALD of Al2O3 and HfO2 resulting in a Dit ≈ 6-7 × 1012 cm-2eV-1. Subjecting these samples to a higher (450 °C) processing temperature results in increased oxidation and a thermally unstable interface. p-GaSb displayed very fast minority carrier generation/recombination likely due to a high density of bulk traps in GaSb.

HoloHands: games console interface for controlling holographic optical manipulation

NASA Astrophysics Data System (ADS)

McDonald, C.; McPherson, M.; McDougall, C.; McGloin, D.

2012-10-01

The increased application of holographic optical manipulation techniques within the life sciences has sparked the development of accessible interfaces for control of holographic optical tweezers. Of particular interest are those that employ familiar, commercially available technologies. Here we present the use of a low cost games console interface, the Microsoft Kinect for the control of holographic optical tweezers and a study into the effect of using such a system upon the quality of trap generated.

Kinect the dots: 3D control of optical tweezers

NASA Astrophysics Data System (ADS)

Shaw, Lucy; Preece, Daryl; Rubinsztein-Dunlop, Halina

2013-07-01

Holographically generated optical traps confine micron- and sub-micron sized particles close to the center of focused light beams. They also provide a way of trapping multiple particles and moving them in three dimensions. However, in many systems the user interface is not always advantageous or intuitive especially for collaborative work and when depth information is required. We discuss and evaluate a set of multi-beam optical tweezers that utilize off the shelf gaming technology to facilitate user interaction. We use the Microsoft Kinect sensor bar as a way of getting the user input required to generate arbitrary optical force fields and control optically trapped particles. We demonstrate that the system can also be used for dynamic light control.

Dependence of interface charge trapping on channel engineering in pentacene field effect transistors.

PubMed

Lee, Sunwoo; Park, Junghyuck; Park, In-Sung; Ahn, Jinho

2014-07-01

We investigate the dependence of charge carrier mobility by trap states at various interface regions through channel engineering. Prior to evaluation of interface trap density, the electrical performance in pentaene field effect transistors (FET) with high-k gate oxide are also investigated depending on four channel engineering. As a channel engineering, gas treatment, coatings of thin polymer layer, and chemical surface modification using small molecules were carried out. After channel engineering, the performance of device as well as interface trap density calculated by conductance method are remarkably improved. It is found that the reduced interface trap density is closely related to decreasing the sub-threshold swing and improving the mobility. Particularly, we also found that performance of device such as mobility, subthreshold swing, and interface trap density after gas same is comparable to those of OTS.

First-principles investigations of proton generation in α-quartz

NASA Astrophysics Data System (ADS)

Yue, Yunliang; Song, Yu; Zuo, Xu

2018-03-01

Proton plays a key role in the interface-trap formation that is one of the primary reliability concerns, thus learning how it behaves is key to understand the radiation response of microelectronic devices. The first-principles calculations have been applied to explore the defects and their reactions associated with the proton release in α-quartz, the well-known crystalline isomer of amorphous silica. When a high concentration of molecular hydrogen (H2) is present, the proton generation can be enhanced by cracking the H2 molecules at the positively charged oxygen vacancies in dimer configuration. If the concentration of molecular hydrogen is low, the proton generation mainly depends on the proton dissociation of the doubly-hydrogenated defects. In particular, a fully passivated {E}2^{\\prime } center can dissociate to release a proton barrierlessly by structure relaxation once trapping a hole. This research provides a microscopic insight into the proton release in silicon dioxide, the critical step associated with the interface-trap formation under radiation in microelectronic devices. Project supported by the Science Challenge Project, China (Grant No. TZ2016003-1-105), CAEP Microsystem and THz Science and Technology Foundation, China (Grant No. CAEPMT201501), the National Natural Science Foundation China (Grant No. NSFC 11404300), and the National Basic Research Program of China (Grant No. 2011CB606405).

Surface/Interface Carrier-Transport Modulation for Constructing Photon-Alternative Ultraviolet Detectors Based on Self-Bending-Assembled ZnO Nanowires.

PubMed

Guo, Zhen; Zhou, Lianqun; Tang, Yuguo; Li, Lin; Zhang, Zhiqi; Yang, Hongbo; Ma, Hanbin; Nathan, Arokia; Zhao, Dongxu

2017-09-13

Surface/interface charge-carrier generation, diffusion, and recombination/transport modulation are especially important in the construction of photodetectors with high efficiency in the field of nanoscience. In the paper, a kind of ultraviolet (UV) detector is designed based on ZnO nanostructures considering photon-trapping, surface plasmonic resonance (SPR), piezophototronic effects, interface carrier-trapping/transport control, and collection. Through carefully optimized surface/interface carrier-transport modulation, a designed device with detectivity as high as 1.69 × 10 16 /1.71 × 10 16 cm·Hz 1/2 /W irradiating with 380 nm photons under ultralow bias of 0.2 V is realized by alternating nanoparticle/nanowire active layers, respectively, and the designed UV photodetectors show fast and slow recovery processes of 0.27 and 4.52 ms, respectively, which well-satisfy practical needs. Further, it is observed that UV photodetection could be performed within an alternative response by varying correlated key parameters, through efficient surface/interface carrier-transport modulation, spectrally resolved photoresponse of the detector revealing controlled detection in the UV region based on the ZnO nanomaterial, photodetection allowed or limited by varying the active layers, irradiation distance from one of the electrodes, standing states, or electric field. The detailed carrier generation, diffusion, and recombination/transport processes are well illustrated to explain charge-carrier dynamics contributing to the photoresponse behavior.

Effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ganesh, K. C. P.; Nagesha, Y. N.; Umakanth, D.; Arora, S. K.; Siddappa, K.

The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (V-TH), the voltage shift due to interface trapped charge (DeltaV(Nit)), the voltage shift due to oxide trapped charge (DeltaV(Not)), the density of interface trapped charge (DeltaN(it)), the density of oxide trapped charge (DeltaN(ot) ) and the drain saturation current (I-D Sat) were studied as a function of fluence. Considerable increase in DeltaN(it) and DeltaN(ot) , and decrease in V-TH and I-D Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 degreesC.

Charge Trapping Properties of Ge Nanocrystals Grown via Solid-State Dewetting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, Steven; Jadli, I.; Aouassa, M.

2018-05-04

In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affectsmore » the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.« less

Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

NASA Astrophysics Data System (ADS)

Kim, Chang-Hyun; Sung, Sujin; Yoon, Myung-Han

2016-09-01

Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation.

Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

NASA Astrophysics Data System (ADS)

Lim, Eunju; Taguchi, Dai; Iwamoto, Mitsumasa

2014-08-01

We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

Rayleigh-Taylor instability and mushroom-pattern formation in a two-component Bose-Einstein condensate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sasaki, Kazuki; Suzuki, Naoya; Saito, Hiroki

2009-12-15

The Rayleigh-Taylor instability at the interface in an immiscible two-component Bose-Einstein condensate is investigated using the mean field and Bogoliubov theories. Rayleigh-Taylor fingers are found to grow from the interface and mushroom patterns are formed. Quantized vortex rings and vortex lines are then generated around the mushrooms. The Rayleigh-Taylor instability and mushroom-pattern formation can be observed in a trapped system.

Towards Laser Cooling Trapped Ions with Telecom Light

NASA Astrophysics Data System (ADS)

Dungan, Kristina; Becker, Patrick; Donoghue, Liz; Liu, Jackie; Olmschenk, Steven

2015-05-01

Quantum information has many potential applications in communication, atomic clocks, and the precision measurement of fundamental constants. Trapped ions are excellent candidates for applications in quantum information because of their isolation from external perturbations, and the precise control afforded by laser cooling and manipulation of the quantum state. For many applications in quantum communication, it would be advantageous to interface ions with telecom light. We present progress towards laser cooling and trapping of doubly-ionized lanthanum, which should require only infrared, telecom-compatible light. Additionally, we present progress on optimization of a second-harmonic generation cavity for laser cooling and trapping barium ions, for future sympathetic cooling experiments. This research is supported by the Army Research Office, Research Corporation for Science Advancement, and Denison University.

Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution.

PubMed

Park, Rebecca Sejung; Shulaker, Max Marcel; Hills, Gage; Suriyasena Liyanage, Luckshitha; Lee, Seunghyun; Tang, Alvin; Mitra, Subhasish; Wong, H-S Philip

2016-04-26

We present a measurement technique, which we call the Pulsed Time-Domain Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and demonstrate its applicability for a broad range of 1D and 2D nanomaterials beyond carbon nanotubes. The Pulsed Time-Domain Measurement enables the quantification (density, energy level, and spatial distribution) of charged traps responsible for hysteresis. A physics-based model of the charge trapping process for a carbon nanotube field-effect transistor is presented and experimentally validated using the Pulsed Time-Domain Measurement. Leveraging this model, we discover a source of traps (surface traps) unique to devices with low-dimensional channels such as carbon nanotubes and nanowires (beyond interface traps which exist in today's silicon field-effect transistors). The different charge trapping mechanisms for interface traps and surface traps are studied based on their temperature dependencies. Through these advances, we are able to quantify the interface trap density for carbon nanotube field-effect transistors (∼3 × 10(13) cm(-2) eV(-1) near midgap), and compare this against a range of previously studied dielectric/semiconductor interfaces.

Annealing shallow traps in electron beam irradiated high mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, Jin-Sung; Tyryshkin, Alexei; Lyon, Stephen

In metal-oxide-silicon (MOS) quantum devices, electron beam lithography (EBL) is known to create defects at the Si/SiO2 interface which can be catastrophic for single electron control. Shallow traps ( meV), which only manifest themselves at low temperature ( 4 K), are especially detrimental to quantum devices but little is known about annealing them. In this work, we use electron spin resonance (ESR) to measure the density of shallow traps in two sets of high mobility (μ) MOS transistors. One set (μ=14,000 cm2/Vs) was irradiated with an EBL dose (10 kV, 40 μC/cm2) and was subsequently annealed in forming gas while the other remained unexposed (μ=23,000 cm2/Vs). Our ESR data show that the forming gas anneal is sufficient to remove shallow traps generated by the EBL dose over the measured shallow trap energy range (0.3-4 meV). We additionally fit these devices' conductivity data to a percolation transition model and extract a zero temperature percolation threshold density, n0 ( 9 ×1010 cm-2 for both devices). We find that the extracted n0 agrees within 15 % with our lowest temperature (360 mK) ESR measurements, demonstrating agreement between two independent methods of evaluating the interface.

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena, E-mail: vmisra@ncsu.edu

2015-06-15

Many dielectrics have been proposed for the gate stack or passivation of AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors, to reduce gate leakage and current collapse, both for power and RF applications. Atomic Layer Deposition (ALD) is preferred for dielectric deposition as it provides uniform, conformal, and high quality films with precise monolayer control of film thickness. Identification of the optimum ALD dielectric for the gate stack or passivation requires a critical investigation of traps created at the dielectric/AlGaN interface. In this work, a pulsed-IV traps characterization method has been used for accurate characterization of interface traps withmore » a variety of ALD dielectrics. High-k dielectrics (HfO{sub 2}, HfAlO, and Al{sub 2}O{sub 3}) are found to host a high density of interface traps with AlGaN. In contrast, ALD SiO{sub 2} shows the lowest interface trap density (<2 × 10{sup 12 }cm{sup −2}) after annealing above 600 °C in N{sub 2} for 60 s. The trend in observed trap densities is subsequently explained with bonding constraint theory, which predicts a high density of interface traps due to a higher coordination state and bond strain in high-k dielectrics.« less

Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

PubMed Central

Kim, Chang-Hyun; Sung, Sujin; Yoon, Myung-Han

2016-01-01

Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation. PMID:27645425

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

NASA Astrophysics Data System (ADS)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Yokoyama, Masaaki; Seki, Shu

2014-07-01

The density of traps at semiconductor-insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 1012 cm-2, and the hole mobility was up to 6.5 cm2 V-1 s-1 after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

Model for the Operation of a Monolayer MoS2 Thin-Film Transistor with Charges Trapped near the Channel Interface

NASA Astrophysics Data System (ADS)

Hur, Ji-Hyun; Park, Junghak; Kim, Deok-kee; Jeon, Sanghun

2017-04-01

We propose a model that describes the operation characteristics of a two-dimensional electron gas (2DEG) in a monolayer transition-metal dichalcogenide thin-film transistor (TFT) having trapped charges near the channel interface. We calculate the drift mobility of the carriers scattered by charged defects located in the channel or near the channel interfaces. The calculated drift mobility is a function of the 2DEG areal density of interface traps. Finally, we calculate the model transfer (ID-VG S ) and output (ID-VS D ) characteristics and verify them by comparing with the experimental results performed with monolayer MoS2 TFTs. We find the modeled results to be excellently consistent with the experiments. This proposed model can be utilized for measuring the interface-trapped charge and trap site densities from the measured transfer curves directly, avoiding more complicated and expensive measurement methods.

Research on c-HfO2 (0 0 1)/α -Al2O3 (1 -1 0 2) interface in CTM devices based on first principle theory

NASA Astrophysics Data System (ADS)

Lu, Wenjuan; Dai, Yuehua; Wang, Feifei; Yang, Fei; Ma, Chengzhi; Zhang, Xu; Jiang, Xianwei

2017-12-01

With the growing application of high-k dielectrics, the interface between HfO2 and Al2O3 play a crucial role in CTM devices. To clearly understand the interaction of the HfO-AlO interface at the atomic and electronic scale, the bonding feature, electronic properties and charge localized character of c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has been investigated by first principle calculations. The c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has adhesive energy about -1.754 J/m2, suggesting that this interface can exist stably. Through analysis of Bader charge and charge density difference, the intrinsic interfacial gap states are mainly originated from the OII and OIII types oxygen atoms at the interface, and only OIII type oxygen atoms can localized electrons effectively and are provided with good reliability during P/E cycles, which theoretically validate the experimental results that HfO2/Al2O3 multi-layered charge trapping layer can generate more effective traps in memory device. Furthermore, the influence of interfacial gap states during P/E cycles in the defective interface system have also been studied, and the results imply that defective system displays the degradation on the reliability during P/E cycles, while, the charge localized ability of interfacial states is stronger than intrinsic oxygen vacancy in the trapping layer. Besides, these charge localized characters are further explained by the analysis of the density of states correspondingly. In sum, our results compare well with similar experimental observations in other literatures, and the study of the interfacial gap states in this work would facilitate further development of interface passivation.

Interface traps contribution on transport mechanisms under illumination in metal-oxide-semiconductor structures based on silicon nanocrystals

NASA Astrophysics Data System (ADS)

Chatbouri, S.; Troudi, M.; Kalboussi, A.; Souifi, A.

2018-02-01

The transport phenomena in metal-oxide-semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer have been investigated, in dark condition and under visible illumination. At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs). And a single peak appears at low temperature only for MOS with Si-NCs related to Si-NCs DLTS response. In dark condition, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap states for MOS without Si-NCs. The tunneling of charge carriers from highly poly-Si to Si substrate trough the trapping/detrapping mechanism in the Si-NCs, at low temperature, contributed to the conduction mechanism for MOS with Si-NCs. The light effect on transport mechanisms has been investigated using current-voltage ( I- V), and high frequency capacitance-voltage ( C- V) methods. We have been marked the photoactive trap effect in inversion zone at room temperature in I- V characteristics, which confirm the contribution of photo-generated charge on the transport mechanisms from highly poly-Si to Si substrate trough the photo-trapping/detrapping mechanism in the Si-NCs and interfaces traps levels. These results have been confirmed by an increasing about 10 pF in capacity's values for the C- V characteristics of MOS with Si-NCs, in the inversion region for inverse high voltage applied under photoexcitation at low temperature. These results are helpful to understand the principle of charge transport in dark condition and under illumination, of MOS structures having Si-NCs in the SiO x = 1.5 oxide matrix.

Anomalous Seebeck coefficient observed in silicon nanowire micro thermoelectric generator

NASA Astrophysics Data System (ADS)

Hashimoto, S.; Asada, S.; Xu, T.; Oba, S.; Himeda, Y.; Yamato, R.; Matsukawa, T.; Matsuki, T.; Watanabe, T.

2017-07-01

We have found experimentally an anomalous thermoelectric characteristic of an n-type Si nanowire micro thermoelectric generator (μTEG). The μTEG is fabricated on a silicon-on-insulator wafer by electron beam lithography and dry etching, and its surface is covered with a thermally grown silicon dioxide film. The observed thermoelectric current is opposite to what is expected from the Seebeck coefficient of n-type Si. The result is understandable by considering a potential barrier in the nanowire. Upon the application of the temperature gradient across the nanowire, the potential barrier impedes the diffusion of thermally activated majority carriers into the nanowire, and it rather stimulates the injection of thermally generated minority carriers. The most plausible origin of the potential barrier is negative charges trapped at the interface between the Si nanowire and the oxide film. We practically confirmed that the normal Seebeck coefficient of the n-type Si nanowire is recovered after the hydrogen forming gas annealing. This implies that the interface traps are diminished by the hydrogen termination of bonding defects. The present results show the importance of the surface inactivation treatment of μTEGs to suppress the potential barrier and unfavorable contribution of minority carriers.

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Atanassova, E.; Stojadinović, N.; Spassov, D.; Manić, I.; Paskaleva, A.

2013-05-01

The time-dependent dielectric breakdown (TDDB) characteristics of 7 nm pure and lightly Al-doped Ta2O5 (equivalent oxide thickness of 2.2 and 1.5 nm, respectively) with W gate electrodes in MOS capacitor configuration are studied using gate injection and constant voltage stress. The effect of both the process-induced defects and the dopant on the breakdown distribution, and on the extracted Weibull slope values, are discussed. The pre-existing traps which provoke weak spots dictate early breakdowns. Their effect is compounded of both the stress-induced new traps generation (percolation model is valid) and the inevitable lower-k interface layer in the region with long time-to-breakdown. The domination of one of these competitive effects defines the mechanism of degradation: the trapping at pre-existing traps appears to dominate in Ta2O5; Al doping reduces defects in Ta2O5, the generation of new traps prevails over the charge trapping in the doped samples, and the mechanism of breakdown is more adequate to the percolation concept. The doping of high-k Ta2O5 even with small amount (5 at.%) may serve as an engineering solution for improving its TDDB characteristics and reliability.

Electrical characterization of thin nanoscale SiOx layers grown on plasma hydrogenated silicon

NASA Astrophysics Data System (ADS)

Halova, E.; Kojuharova, N.; Alexandrova, S.; Szekeres, A.

2018-03-01

We analyzed the electrical characteristics of MOS structures with a SiOx layer grown on Si treated in plasma without heating. The hysteresis effect observed indicates the presence of traps spatially distributed into the oxide near the interface. The shift and the shape of the curves reveal a small oxide charge and low leakage currents, i.e. a high-quality dielectric layer. The generalized C-V curve was generated by applying the two-frequency methods on the C-V and G-V characteristics at frequencies in the range from 1 kHz to 300 kHz and by accounting for the series resistance and the leakage through the oxide layer. The energy spectra of the interface traps were calculated by comparing the experimental and the ideal theoretical C-V curves. The spectra showed the presence of interface traps with localized energy levels in the Si bandgap. These conclusions correlate well with the results on this oxide’s mechanical stress level, composition and Si-O ring structure, as well as on the interfacial region composition, obtained by our previous detailed multi-angle spectral ellipsometric studies. The ellipsometric data and the capacitance in strong accumulation of the C-V curves were used to calculate the thickness and the dielectric constants of the oxide layers.

Light trapping in thin-film solar cells with randomly rough and hybrid textures.

PubMed

Kowalczewski, Piotr; Liscidini, Marco; Andreani, Lucio Claudio

2013-09-09

We study light-trapping in thin-film silicon solar cells with rough interfaces. We consider solar cells made of different materials (c-Si and μc-Si) to investigate the role of size and nature (direct/indirect) of the energy band gap in light trapping. By means of rigorous calculations we demonstrate that the Lambertian Limit of absorption can be obtained in a structure with an optimized rough interface. We gain insight into the light trapping mechanisms by analysing the optical properties of rough interfaces in terms of Angular Intensity Distribution (AID) and haze. Finally, we show the benefits of merging ordered and disordered photonic structures for light trapping by studying a hybrid interface, which is a combination of a rough interface and a diffraction grating. This approach gives a significant absorption enhancement for a roughness with a modest size of spatial features, assuring good electrical properties of the interface. All the structures presented in this work are compatible with present-day technologies, giving recent progress in fabrication of thin monocrystalline silicon films and nanoimprint lithography.

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki

The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{supmore » 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.« less

Metal-HfO{sub 2}-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO{sub 2} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, In-Sung; Jung, Yong Chan; Seong, Sejong

2015-01-15

The charge trapping properties of metal-HfO{sub 2}-Ge capacitor as a nonvolatile memory have been investigated with (NH{sub 4}){sub 2}S-treated Ge substrate and atomic-layer-deposited HfO{sub 2} layer. The interfacial layer generated by (NH{sub 4}){sub 2}S-treated Ge substrate reveals a trace of -S- bonding, very sharp interface edges, and smooth surface morphology. The Ru-HfO{sub 2}-Ge capacitor with (NH{sub 4}){sub 2}S-treated Ge substrate shows an enhanced interface state with little frequency dispersion, a lower leakage current, and very reliable properties with the enhanced endurance and retention than Ru-HfO{sub 2}-Ge capacitor with cyclic-cleaned Ge substrate.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido; Department of Electrical Engineering, KU Leuven, Leuven

2015-08-31

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress ismore » highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.« less

Single-Atom Single-Photon Quantum Interface

NASA Astrophysics Data System (ADS)

Moehring, David; Bochmann, Joerg; Muecke, Martin; Specht, Holger; Weber, Bernhard; Wilk, Tatjana; Rempe, Gerhard

2008-05-01

By combining atom trapping techniques and cavity cooling schemes we are able to trap a single neutral atom inside a high-finesse cavity for several tens of seconds. We show that our coupled atom-cavity system can be used to generate single photons in a controlled way. With our long trapping times and high single-photon production efficiency, the non-classical properties of the emitted light can be shown in the photon correlations of a single atom. In a similar atom-cavity setup, we investigate the interface between atoms and photons by entangling a single atom with a single photon emitted into the cavity and by further mapping the quantum state of the atom onto a second single photon. These schemes are intrinsically deterministic and establish the basic element required to realize a distributed quantum network with individual atoms at rest as quantum memories and single flying photons as quantum messengers. This work was supported by the Deutsche Forschungsgemeinschaft, and the European Union SCALA and CONQUEST programs. D. L. M. acknowledges support from the Alexander von Humboldt Foundation.

Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Kim, Hyeran; Seo, Soonjoo; Lee, Hyun Uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam

2017-09-01

Electric field-induced charge trapping and exciton dissociation were demonstrated at a penatcene/grapheme quantum dot (GQD) interface using a bottom contact bi-layer field effect transistor (FET) as an electrical nano-probe. Large threshold voltage shift in a pentacene/GQD FET in the dark arises from field-induced carrier trapping in the GQD layer or GQD-induced trap states at the pentacene/GQD interface. As the gate electric field increases, hysteresis characterized by the threshold voltage shift depending on the direction of the gate voltage scan becomes stronger due to carrier trapping associated with the presence of a GQD layer. Upon illumination, exciton dissociation and gate electric field-induced charge trapping simultaneously contribute to increase the threshold voltage window, which can potentially be exploited for photoelectric memory and/or photovoltaic devices through interface engineering.

Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Otani, Yohei; Ono, Toshiro

2011-09-01

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeNx/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeNx/Ge interface properties. The GeNx/Ge formed at room temperature and treated by PMA at 400 °C exhibits the best interface properties with an interface trap density of 1 × 1011 cm-2 eV-1. The GeNx/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces

NASA Astrophysics Data System (ADS)

Meng, Andrew C.; Tang, Kechao; Braun, Michael R.; Zhang, Liangliang; McIntyre, Paul C.

2017-10-01

The performance of nanostructured semiconductors is frequently limited by interface defects that trap electronic carriers. In particular, high aspect ratio geometries dramatically increase the difficulty of using typical solid-state electrical measurements (multifrequency capacitance- and conductance-voltage testing) to quantify interface trap densities (D it). We report on electrochemical impedance spectroscopy (EIS) to characterize the energy distribution of interface traps at metal oxide/semiconductor interfaces. This method takes advantage of liquid electrolytes, which provide conformal electrical contacts. Planar Al2O3/p-Si and Al2O3/p-Si0.55Ge0.45 interfaces are used to benchmark the EIS data against results obtained from standard electrical testing methods. We find that the solid state and EIS data agree very well, leading to the extraction of consistent D it energy distributions. Measurements carried out on pyramid-nanostructured p-Si obtained by KOH etching followed by deposition of a 10 nm ALD-Al2O3 demonstrate the application of EIS to trap characterization of a nanostructured dielectric/semiconductor interface. These results show the promise of this methodology to measure interface state densities for a broad range of semiconductor nanostructures such as nanowires, nanofins, and porous structures.

Hydrogen interaction with ferrite/cementite interface: ab initio calculations and thermodynamics

NASA Astrophysics Data System (ADS)

Mirzoev, A. A.; Verkhovykh, A. V.; Okishev, K. Yu.; Mirzaev, D. A.

2018-02-01

The paper presents the results of ab initio modelling of the interaction of hydrogen atoms with ferrite/cementite interfaces in steels and thermodynamic assessment of the ability of interfaces to trap hydrogen atoms. Modelling was performed using the density functional theory with generalised gradient approximation (GGA'96), as implemented in WIEN2k package. An Isaichev-type orientation relationship between the two phases was accepted, with a habit plane (101)c ∥ (112)α. The supercell contained 64 atoms (56 Fe and 8 C). The calculated formation energies of ferrite/cementite interface were 0.594 J/m2. The calculated trapping energy at cementite interstitial was 0.18 eV, and at the ferrite/cementite interface - 0.30 eV. Considering calculated zero-point energy, the trapping energies at cementite interstitial and ferrite/cementite interface become 0.26 eV and 0.39 eV, respectively. The values are close to other researchers' data. These results were used to construct a thermodynamic description of ferrite/cementite interface-hydrogen interaction. Absorption calculations using the obtained trapping energy values showed that even thin lamellar ferrite/cementite mixture with an interlamellar spacing smaller than 0.1 μm has noticeable hydrogen trapping ability at a temperature below 400 K.

Distribution of electron traps in SiO2/HfO2 nMOSFET

NASA Astrophysics Data System (ADS)

Xiao-Hui, Hou; Xue-Feng, Zheng; Ao-Chen, Wang; Ying-Zhe, Wang; Hao-Yu, Wen; Zhi-Jing, Liu; Xiao-Wei, Li; Yin-He, Wu

2016-05-01

In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ΔE ˜ -1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Guo Xing; Hatchtel, Jordan; Shen, Xiao

Here, we investigate negative-bias temperature instabilities in SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics. The activation energies we measured for interface-trap charge buildup during negative-bias temperature stress were lower for SiGe channel pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si capping layers than for conventional Si channel pMOSFETs with SiO 2 gate dielectrics. Electron energy loss spectroscopy and scanning transmission electron microscopy images demonstrate that Ge atoms can diffuse from the SiGe layer into the Si capping layer, which is adjacent to the SiO 2/HfO 2 gate dielectric. Density functional calculations show that these Ge atoms reduce themore » strength of nearby Si-H bonds and that Ge-H bond energies are still lower, thereby reducing the activation energy for interface-trap generation for the SiGe devices. Moreover, activation energies for oxide-trap charge buildup during negative-bias temperature stress are similarly small for SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si pMOSFETs with SiO 2 gate dielectrics, suggesting that, in both cases, the oxide-trap charge buildup likely is rate-limited by hole tunneling into the near-interfacial SiO 2.« less

Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

NASA Astrophysics Data System (ADS)

Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

2017-04-01

We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

Linked gas chromatograph-thermal energy analyzer/ion trap mass spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alcaraz, A.; Martin, W.H.; Andresen, B.D.

1991-05-01

The capability of comparing a nitrogen chromatogram generated from a gas chromatograph (GC, Varian model 3400) linked to a thermal energy analyzer (TEA, Thermedics Inc. Model 610) with a total ion chromatogram (from a Finnigan-MAT Ion Trap Mass Spectrometer, ITMS) has provided a new means to screen and identifying trace levels of nitrogen-containing compounds in complex mixtures. Prior to the work described here, it has not been possible to simultaneously acquire TEA and MS data. What was needed was a viable GC-TEA/ITMS interface to combine the capabilities of both instruments. 4 figs.

Measuring local genetic variability in populations of codling moth (Lepidoptera: Tortricidae) across an unmanaged and commercial orchard interface.

PubMed

Fuentes-Contreras, Eduardo; Basoalto, Esteban; Franck, Pierre; Lavandero, Blas; Knight, Alan L; Ramírez, Claudio C

2014-04-01

The genetic structure of adult codling moth, Cydia pomonella (L.), populations was characterized both inside a managed apple, Malus domestica Borkdhausen, orchard and in surrounding unmanaged hosts and nonhost trees in central Chile during 2006-2007. Adult males were collected using an array of sex pheromone-baited traps. Five microsatellite genetic markers were used to study the population genetic structure across both spatial (1-100 ha) and temporal (generations within a season) gradients. Analysis of molecular variance (AMOVA) found a significant, but weak, association in both the spatial and temporal genetic structures. Discriminant analysis also found significant differentiation between the first and second generation for traps located either inside or outside the managed orchard. The Bayesian assignment test detected three genetic clusters during each of the two generations, which corresponded to different areas within the unmanaged and managed apple orchard interface. The lack of a strong spatial structure at a local scale was hypothesized to be because of active adult movement between the managed and unmanaged hosts and the asymmetry in the insecticide selection pressure inside and outside the managed habitats. These data highlight the importance of developing area-wide management programs that incorporate management tactics effective at the landscape level for successful codling moth control.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fayolle, M.; Yamaguchi, M.; Ohto, T.

Organic magnetoresistance (OMAR) can be caused by either single carrier (bipolaron) or double carriers (electron-hole)-based mechanisms. In order to consider applications for OMAR, it is important to control the mechanism present in the device. In this paper, we report the effect of traps on OMAR resulting of disorder at the interface between the organic active layer with the hole injection layer [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate): PEDOT:PSS]. It has been found that while the single carriers OMAR is enhanced by the presence of traps, the double carriers OMAR is totally removed in a sample with a high interface trap density. The reasons formore » these results are discussed based on the impedance spectroscopy measurements. First, the mechanism (single or double carriers) responsible of the OMAR was determined with the support of the capacitance measurement. Then, the influence of traps was discussed with the Nyquist diagrams and phase angle-frequency plots of the samples. The results suggested that with a rough interface and thus high disorder, the presence of traps enhanced the bipolaron formation. Traps also acted as recombination centers for electron-hole pairs, which prevented the double carriers OMAR in devices with a rough interface. On the other hand, with a low trap density, i.e., with a smooth surface, the single carrier OMAR decreased, and double carriers OMAR appeared. The sign of the OMAR could then be controlled by simply sweeping the bias voltage. This work demonstrated that the roughness at the interface is important for controlling OMAR and its reproducibility, and that the combination of OMAR measurement and impedance spectroscopy is helpful for clarifying the processes at the interface.« less

Hydrodynamic trapping for rapid assembly and in situ electrical characterization of droplet interface bilayer arrays

DOE PAGES

Nguyen, Mary -Anne; Srijanto, Bernadeta; Collier, C. Patrick; ...

2016-08-02

The droplet interface bilayer (DIB) is a modular technique for assembling planar lipid membranes between water droplets in oil. The DIB method thus provides a unique capability for developing digital, droplet-based membrane platforms for rapid membrane characterization, drug screening and ion channel recordings. This paper demonstrates a new, low-volume microfluidic system that automates droplet generation, sorting, and sequential trapping in designated locations to enable the rapid assembly of arrays of DIBs. The channel layout of the device is guided by an equivalent circuit model, which predicts that a serial arrangement of hydrodynamic DIB traps enables sequential droplet placement and minimizesmore » the hydrodynamic pressure developed across filled traps to prevent squeeze-through of trapped droplets. Furthermore, the incorporation of thin-film electrodes fabricated via evaporation metal deposition onto the glass substrate beneath the channels allows for the first time in situ, simultaneous electrical interrogation of multiple DIBs within a sealed device. Combining electrical measurements with imaging enables measurements of membrane capacitance and resistance and bilayer area, and our data show that DIBs formed in different trap locations within the device exhibit similar sizes and transport properties. Simultaneous, single channel recordings of ion channel gating in multiple membranes are obtained when alamethicin peptides are incorporated into the captured droplets, qualifying the thin-film electrodes as a means for measuring stimuli-responsive functions of membrane-bound biomolecules. Furthermore, this novel microfluidic-electrophysiology platform provides a reproducible, high throughput method for performing electrical measurements to study transmembrane proteins and biomembranes in low-volume, droplet-based membranes.« less

Hydrodynamic trapping for rapid assembly and in situ electrical characterization of droplet interface bilayer arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Mary -Anne; Srijanto, Bernadeta; Collier, C. Patrick

The droplet interface bilayer (DIB) is a modular technique for assembling planar lipid membranes between water droplets in oil. The DIB method thus provides a unique capability for developing digital, droplet-based membrane platforms for rapid membrane characterization, drug screening and ion channel recordings. This paper demonstrates a new, low-volume microfluidic system that automates droplet generation, sorting, and sequential trapping in designated locations to enable the rapid assembly of arrays of DIBs. The channel layout of the device is guided by an equivalent circuit model, which predicts that a serial arrangement of hydrodynamic DIB traps enables sequential droplet placement and minimizesmore » the hydrodynamic pressure developed across filled traps to prevent squeeze-through of trapped droplets. Furthermore, the incorporation of thin-film electrodes fabricated via evaporation metal deposition onto the glass substrate beneath the channels allows for the first time in situ, simultaneous electrical interrogation of multiple DIBs within a sealed device. Combining electrical measurements with imaging enables measurements of membrane capacitance and resistance and bilayer area, and our data show that DIBs formed in different trap locations within the device exhibit similar sizes and transport properties. Simultaneous, single channel recordings of ion channel gating in multiple membranes are obtained when alamethicin peptides are incorporated into the captured droplets, qualifying the thin-film electrodes as a means for measuring stimuli-responsive functions of membrane-bound biomolecules. Furthermore, this novel microfluidic-electrophysiology platform provides a reproducible, high throughput method for performing electrical measurements to study transmembrane proteins and biomembranes in low-volume, droplet-based membranes.« less

Effects of Molybdenum Addition on Hydrogen Desorption of TiC Precipitation-Hardened Steel

NASA Astrophysics Data System (ADS)

Song, Eun Ju; Baek, Seung-Wook; Nahm, Seung Hoon; Suh, Dong-Woo

2018-05-01

The hydrogen-trap states in TiC and MoC that have coherent interfaces with ferrite were investigated using first-principles calculation. The trapping sites of TiC were the interfaces and interstitial sites of ferrite. On the other hand, the trapping sites of MoC were ferrite interstitial sites; the interface had a negative binding energy with H. Thermal desorption analysis confirms that the amounts of diffusible hydrogen were significantly reduced by addition of Mo in Ti-bearing steel.

Development of the Next Generation Gas Trap for the Space Station Internal Thermal Control System

NASA Technical Reports Server (NTRS)

Leimkuehler, Thomas O.; Spelbring, Chris; Reeves, Daniel R.; Holt, James M.

2003-01-01

The current dual-membrane gas trap is designed to remove non-condensed gases (NCG) from the Internal Thermal Control System (ITCS) coolant on board the International Space Station (ISS). To date it has successfully served its purpose of preventing depriming, overspeed, and shutdown of the ITCS pump. However, contamination in the ITCS coolant has adversely affected the gas venting rate and lifetime of the gas trap, warranting a development effort for a next-generation gas trap. Design goals are to meet or exceed the current requirements to (1) include greater operating ranges and conditions, (2) eliminate reliance on the current hydrophilic tube fabrication process, and (3) increase operational life and tolerance to particulate and microbial growth fouling. In addition, the next generation gas trap will essentially be a 'dropin" design such that no modifications to the ITCS pump package assembly (PPA) will be required, and the implementation of the new design will not affect changes to the ITCS operational conditions, interfaces, or software. This paper will present the initial membrane module design and development work which has included (1) a trade study among several conceptual designs, (2) performance modeling of a hydrophobic-only design, and (3) small-scale development test data for the hydrophobic-only design. Testing has shown that the hydrophobic-only design is capable of performing even better than the current dual-membrane design for both steady-state gas removal and gas slug removal.

Investigation of Oxygen and Hydrogen Associated Charge Trapping and Electrical Characteristics of Silicon Nitride Films for Mnos Devices.

NASA Astrophysics Data System (ADS)

Xu, Dan

Silicon nitride (Si_3N _4) and silicon oxynitride (SiO _{rm x}N_ {rm y}) films in the form of metal -nitride-oxide-silicon (MNOS) structures were investigated to determine the correlation between their electrical characteristics and the nature of the chemical bonding so as to provide guidelines for the next generation of nonvolatile memory devices. The photoionization cross section of electron traps in the oxynitride films of MNOS devices were also measured as a function photon energy and oxygen concentration of the silicon oxynitride films. An effective photoionization cross section associated with electron traps was determined to be between 4.9 times 10 ^{-19} cm^2 to 10.8 times 10^ {-19} cm^2 over the photon energy of 2.06 eV to 3.1 eV for silicon oxynitride films containing 7 atomic % to 17 atomic % of oxygen. The interface state density of metal-nitride-oxide -silicon (MNOS) devices was investigated as a function of processing conditions. The interface state density around the midgap of the oxide-silicon interface of the MNOS structures for deposition temperature between 650^ circC to 850^circC increased from 1.1 to 8.2 times 10 ^{11} cm^ {-2}eV^{-1}, for as-deposited silicon nitride films; but decreased from 5.0 to 3.5 times 10^ {11} cm^{-2} eV^{-1}, for films annealed in nitrogen at 900^circC for 60 minutes; and further decreased and remained constant at 1.5 times 10^{11 } cm^{-2}eV ^{-1}, for films which were further annealed in hydrogen at 900^ circC for an additional 60 minutes. The interface state density increase was due to an increase in the loss of hydrogen at the interfacial region and also due to an increase in the thermal stress caused by differences in thermal expansion coefficients of silicon nitride and silicon dioxide films at higher deposition temperatures. The interface state density was subject to two opposing influences; an increase by thermal stress, and a reduction by hydrogen compensation of these states. The photocurrent-voltage (photoI-V) technique in combination with internal photo-electric technique were employed to determine the trapped charge density and its centroid as a function of processing conditions. Results showed that the trapped charge density was of the order of 10^{18} cm ^{-3}. However, the charge trapping density increased about 30% as the atomic percentage of hydrogen decreased from 6 to 2 atomic %.

Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO2 interface

NASA Astrophysics Data System (ADS)

Kawai, Hiroki; Nakasaki, Yasushi; Kanemura, Takahisa; Ishihara, Takamitsu

2018-04-01

Dopant segregation at Si/SiO2 interface has been a serious problem in silicon device technology. This paper reports a comprehensive density-functional study on the segregation mechanisms of boron, phosphorous, and arsenic at the Si/SiO2 interface. We found that three kinds of interfacial defects, namely, interstitial oxygen, oxygen vacancy, and silicon vacancy with two oxygen atoms, are stable in the possible chemical potential range. Thus, we consider these defects as trap sites for the dopants. For these defects, the dopant segregation energies, the electrical activities of the trapped dopants, and the kinetic energy barriers of the trapping/detrapping processes are calculated. As a result, trapping at the interstitial oxygen site is indicated to be the most plausible mechanism of the dopant segregation. The interstitial oxygen works as a major trap site since it has a high areal density at the Si/SiO2 interface due to the low formation energy.

Visualization of removal of trapped air from the apical region of the straight root canal models generating 2-phase intermittent counter flow during ultrasonically activated irrigation.

PubMed

Peeters, Harry Huiz; Iskandar, Bernard; Suardita, Ketut; Suharto, Djoko

2014-06-01

The purpose of this in vitro study was to obtain a better understanding of the mechanism of irrigant traveling apically and generating 2-phase intermittent counter flow in straight root canal models during activation of the irrigant by ultrasonic means in an endodontic procedure. A high-speed imaging system, with high temporal and spatial resolution (FastCam SA5; Photron, Tokyo, Japan) at a frame rate of 100,000 frames per second using a macro lens (60 mm, f/2.8; Nikon, Tokyo, Japan), was used to visualize, in glass models of root canals, an ultrasonically induced acoustic pressure wave in an EDTA solution environment. A 25-mm stainless steel noncutting file #20 driven by an ultrasonic device (P5 Newtron; Satelec Acteon, Mérignac, France) at power settings of 5 and 7 produced disturbances at the solution-air interface. We found that apically directed travel of the irrigant was caused by disruption of the surface tension at the solution-air interface. This disruption caused by ultrasonic activation energy displaced air in the form of bubbles from the apical region toward the solution. The apical movement of the solution may be attributed to ultrasonically induced wave generation at the solution-air interface, resulting in the removal of trapped air from the root canal and allowing the solution to travel apically in the opposite directions (via a 2-phase intermittent counter flow). Copyright © 2014 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

Investigation of impact of post-metallization annealing on reliability of 65 nm NOR floating-gate flash memories

NASA Astrophysics Data System (ADS)

Chiu, Shengfen; Xu, Yue; Ji, Xiaoli; Yan, Feng

2016-12-01

This paper investigates the impact of post-metallization annealing (PMA) in pure nitrogen ambient on the reliability of 65 nm NOR-type floating-gate flash memory devices. The experimental results show that, with PMA process, the cycling performance of flash cells, especially for the erasing speed is obviously degraded compared to that without PMA. It is found that the bulk oxide traps and tunnel oxide/Si interface traps are significantly increased with PMA treatment. The water/moisture residues left in the interlayer dielectric layers diffuse to tunnel oxide during PMA process is considered to be responsible for these traps generation, which further enhances the degradation of erase performance. Skipping PMA treatment is proposed to suppress the water diffusion effect on erase performance degradation of flash cells.

Positron studies of metal-oxide-semiconductor structures

NASA Astrophysics Data System (ADS)

Au, H. L.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.

1993-03-01

Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.

Remote mass spectrometric sampling of electrospray- and desorption electrospray-generated ions using an air ejector.

PubMed

Dixon, R Brent; Bereman, Michael S; Muddiman, David C; Hawkridge, Adam M

2007-10-01

A commercial air ejector was coupled to an electrospray ionization linear ion trap mass spectrometer (LTQ) to transport remotely generated ions from both electrospray (ESI) and desorption electrospray ionization (DESI) sources. We demonstrate the remote analysis of a series of analyte ions that range from small molecules and polymers to polypeptides using the AE-LTQ interface. The details of the ESI-AE-LTQ and DESI-AE-LTQ experimental configurations are described and preliminary mass spectrometric data are presented.

Remote Mass Spectrometric Sampling of Electrospray- and Desorption Electrospray-Generated Ions Using an Air Ejector

PubMed Central

Dixon, R. Brent; Bereman, Michael S.; Muddiman, David C.; Hawkridge, Adam M.

2007-01-01

A commercial air ejector was coupled to an electrospray ionization linear ion trap mass spectrometer (LTQ) to transport remotely generated ions from both electrospray (ESI) and desorption electrospray ionization (DESI) sources. We demonstrate the remote analysis of a series of analyte ions that range from small molecules and polymers to polypeptides using the AE-LTQ interface. The details of the ESI-AE-LTQ and DESI-AE-LTQ experimental configurations are described and preliminary mass spectrometric data is presented. PMID:17716909

Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

NASA Astrophysics Data System (ADS)

Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

2017-10-01

A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

Recombination in Perovskite Solar Cells: Significance of Grain Boundaries, Interface Traps, and Defect Ions.

PubMed

Sherkar, Tejas S; Momblona, Cristina; Gil-Escrig, Lidón; Ávila, Jorge; Sessolo, Michele; Bolink, Henk J; Koster, L Jan Anton

2017-05-12

Trap-assisted recombination, despite being lower as compared with traditional inorganic solar cells, is still the dominant recombination mechanism in perovskite solar cells (PSCs) and limits their efficiency. We investigate the attributes of the primary trap-assisted recombination channels (grain boundaries and interfaces) and their correlation to defect ions in PSCs. We achieve this by using a validated device model to fit the simulations to the experimental data of efficient vacuum-deposited p-i-n and n-i-p CH 3 NH 3 PbI 3 solar cells, including the light intensity dependence of the open-circuit voltage and fill factor. We find that, despite the presence of traps at interfaces and grain boundaries (GBs), their neutral (when filled with photogenerated charges) disposition along with the long-lived nature of holes leads to the high performance of PSCs. The sign of the traps (when filled) is of little importance in efficient solar cells with compact morphologies (fused GBs, low trap density). On the other hand, solar cells with noncompact morphologies (open GBs, high trap density) are sensitive to the sign of the traps and hence to the cell preparation methods. Even in the presence of traps at GBs, trap-assisted recombination at interfaces (between the transport layers and the perovskite) is the dominant loss mechanism. We find a direct correlation between the density of traps, the density of mobile ionic defects, and the degree of hysteresis observed in the current-voltage ( J - V ) characteristics. The presence of defect states or mobile ions not only limits the device performance but also plays a role in the J - V hysteresis.

Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mooney, P. M.; Jiang, Zenan; Basile, A. F.

To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. Thesemore » are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.« less

Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, J.-S.; Tyryshkin, A. M.; Lyon, S. A.

2017-03-01

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO2 interface. Here, we show that a forming gas anneal is effective at removing shallow defects (≤4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors. One set was irradiated with an electron-beam (10 keV, 40 μC/cm2) and was subsequently annealed in forming gas while the other set remained unexposed. Low temperature (335 mK) transport measurements indicate that the forming gas anneal recovers the e-beam exposed sample's peak mobility (14 000 cm2/Vs) to within a factor of two of the unexposed sample's mobility (23 000 cm2/Vs). Using electron spin resonance (ESR) to measure the density of shallow traps, we find that the two sets of devices are nearly identical, indicating the forming gas anneal is sufficient to anneal out shallow defects generated by the e-beam exposure. Fitting the two sets of devices' transport data to a percolation transition model, we extract a T = 0 percolation threshold density in quantitative agreement with our lowest temperature ESR-measured trap densities.

Interfacial dynamic surface traps of lead sulfide (PbS) nanocrystals: test-platform for interfacial charge carrier traps at the organic/inorganic functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Ko, Hyungduk; Park, Byoungnam

2018-04-01

Nanocrystal (NC) size and ligand dependent dynamic trap formation of lead sulfide (PbS) NCs in contact with an organic semiconductor were investigated using a pentacene/PbS field effect transistor (FET). We used a bilayer pentacene/PbS FET to extract information of the surface traps of PbS NCs at the pentacene/PbS interface through the field effect-induced charge carrier density measurement in the threshold and subthreshold regions. PbS size and ligand dependent trap properties were elucidated by the time domain and threshold voltage measurements in which threshold voltage shift occurs by carrier charging and discharging in the trap states of PbS NCs. The observed threshold voltage shift is interpreted in context of electron trapping through dynamic trap formation associated with PbS NCs. To the best of our knowledge, this is the first demonstration of the presence of interfacial dynamic trap density of PbS NC in contact with an organic semiconductor (pentacene). We found that the dynamic trap density of the PbS NC is size dependent and the carrier residence time in the specific trap sites is more sensitive to NC size variation than to NC ligand exchange. The probing method presented in the study offers a means to investigate the interfacial surface traps at the organic-inorganic hetero-junction, otherwise understanding of the buried surface traps at the functional interface would be elusive.

Structural and electronic properties of the transition layer at the SiO{sub 2}/4H-SiC interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Wenbo; Wang, Dejun, E-mail: dwang121@dlut.edu.cn; Zhao, Jijun

Using first-principles methods, we generate an amorphous SiO{sub 2}/4H-SiC interface with a transition layer. Based this interface model, we investigate the structural and electronic properties of the interfacial transition layer. The calculated Si 2p core-level shifts for this interface are comparable to the experimental data, indicating that various SiC{sub x}O{sub y} species should be present in this interface transition layer. The analysis of the electronic structures reveals that the tetrahedral SiC{sub x}O{sub y} structures cannot introduce any of the defect states at the interface. Interestingly, our transition layer also includes a C-C=C trimer and SiO{sub 5} configurations, which lead tomore » the generation of interface states. The accurate positions of Kohn-Sham energy levels associated with these defects are further calculated within the hybrid functional scheme. The Kohn-Sham energy levels of the carbon trimer and SiO{sub 5} configurations are located near the conduction and valence band of bulk 4H-SiC, respectively. The result indicates that the carbon trimer occurred in the transition layer may be a possible origin of near interface traps. These findings provide novel insight into the structural and electronic properties of the realistic SiO{sub 2}/SiC interface.« less

Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyu Sang

2017-09-01

In this work, the impact of trap states at the p-(Al)GaN/AlGaN interface has been investigated for the normally-off mode p-(Al)GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) by means of frequency dependent conductance. From the current-voltage (I-V) measurement, it was found that the p-AlGaN gate integrated device has higher drain current and lower gate leakage current compared to the p-GaN gate integrated device. We obtained the interface trap density and the characteristic time constant for the p-type gate integrated HFETs under the forward gate voltage of up to 6 V. As a result, the interface trap density (characteristic time constant) of the p-GaN gate device was lower (longer) than that of the p-AlGaN. Furthermore, it was analyzed that the trap state energy level of the p-GaN gate device was located at the shallow level relative to the p-AlGaN gate device, which accounts for different gate leakage current of each devices.

Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukuda, Yukio; Otani, Yohei; Okamoto, Hiroshi

2011-09-26

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surfacemore » can move from the valence band edge to the conduction band edge.« less

Determination of trap distributions from current characteristics of pentacene field-effect transistors with surface modified gate oxide

NASA Astrophysics Data System (ADS)

Scheinert, Susanne; Pernstich, Kurt P.; Batlogg, Bertram; Paasch, Gernot

2007-11-01

It has been demonstrated [K. P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D. J. Gundlach, B. Batlogg, A. N. Rashid, and G. Schitter, J. Appl. Phys. 96, 6431 (2004)] that a controllable shift of the threshold voltage in pentacene thin film transistors is caused by the use of organosilanes with different functional groups forming a self-assembled monolayer (SAM) on the gate oxide. The observed broadening of the subthreshold region indicates that the SAM creates additional trap states. Indeed, it is well known that traps strongly influence the behavior of organic field-effect transistors (OFETs). Therefore, the so-called "amorphous silicon (a-Si) model" has been suggested to be an appropriate model to describe OFETs. The main specifics of this model are transport of carriers above a mobility edge obeying Boltzmann statistics and exponentially distributed tail states and deep trap states. Here, approximate trap distributions are determined by adjusting two-dimensional numerical simulations to the experimental data. It follows from a systematic variation of parameters describing the trap distributions that the existence of both donorlike and acceptorlike trap distributions near the valence band, respectively, and a fixed negative interface charge have to be assumed. For two typical devices with different organosilanes the electrical characteristics can be described well with a donorlike bulk trap distribution, an acceptorlike interface distribution, and/or a fixed negative interface charge. As expected, the density of the fixed or trapped interface charge depends strongly on the surface treatment of the dielectric. There are some limitations in determining the trap distributions caused by either slow time-dependent processes resulting in differences between transfer and output characteristics, or in the uncertainty of the effective mobility.

Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process

PubMed Central

Yun, Myeong Gu; Kim, Ye Kyun; Ahn, Cheol Hyoun; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun; Kim, Yong-Hoon

2016-01-01

We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fabricated using atomic layer deposition (ALD)-derived Al2O3 gate insulators. The surfaces of the Al2O3 gate insulators are damaged by ion bombardment during the deposition of the IGZO channel layers by sputtering and the damage results in the hysteresis behavior of the photo-TFTs. The hysteresis loops broaden as the deposition power density increases. This implies that we can easily control the amount of the interface trap sites and/or trap sites in the gate insulator near the interface. The photo-TFTs with large hysteresis-related defects have high S/N ratio and fast recovery in spite of the low operation voltages including a drain voltage of 1 V, positive gate bias pulse voltage of 3 V, and gate voltage pulse width of 3 V (0 to 3 V). In addition, through the hysteresis-related defect-generating process, we have achieved a high responsivity since the bulk defects that can be photo-excited and eject electrons also increase with increasing deposition power density. PMID:27553518

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

NASA Astrophysics Data System (ADS)

Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

2018-04-01

Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

IGDS/TRAP Interface Program (ITIP). Software User Manual (SUM). [network flow diagrams for coal gasification studies

NASA Technical Reports Server (NTRS)

Jefferys, S.; Johnson, W.; Lewis, R.; Rich, R.

1981-01-01

This specification establishes the requirements, concepts, and preliminary design for a set of software known as the IGDS/TRAP Interface Program (ITIP). This software provides the capability to develop at an Interactive Graphics Design System (IGDS) design station process flow diagrams for use by the NASA Coal Gasification Task Team. In addition, ITIP will use the Data Management and Retrieval System (DMRS) to maintain a data base from which a properly formatted input file to the Time-Line and Resources Analysis Program (TRAP) can be extracted. This set of software will reside on the PDP-11/70 and will become the primary interface between the Coal Gasification Task Team and IGDS, DMRS, and TRAP. The user manual for the computer program is presented.

High temperature 1 MHz capacitance-voltage method for evaluation of border traps in 4H-SiC MOS system

NASA Astrophysics Data System (ADS)

Peng, Zhao-Yang; Wang, Sheng-Kai; Bai, Yun; Tang, Yi-Dan; Chen, Xi-Ming; Li, Cheng-Zhan; Liu, Ke-An; Liu, Xin-Yu

2018-04-01

In this work, border traps located in SiO2 at different depths in 4H-SiC MOS system are evaluated by a simple and effective method based on capacitance-voltage (C-V) measurements. This method estimates the border traps between two adjacent depths through C-V measurement at various frequencies at room and elevated temperatures. By comparison of these two C-V characteristics, the correlation between time constant of border traps and temperatures is obtained. Then the border trap density is determined by integration of capacitance difference against gate voltage at the regions where border traps dominate. The results reveal that border trap concentration a few nanometers away from the interface increases exponentially towards the interface, which is in good agreement with previous work. It has been proved that high temperature 1 MHz C-V method is effective for border trap evaluation.

Effect of Temperature on Formation and Stability of Shallow Trap at a Dielectric Interface of the Multilayer

NASA Astrophysics Data System (ADS)

Rogti, F.

2015-12-01

Space-charge behavior at dielectric interfaces in multilayer low-density polyethylene (LDPE) and fluorinated ethylene propylene (FEP) subjected to a direct-current (DC) field has been investigated as a function of temperature using the pulsed electroacoustic technique. A sandwich structure constituted by two nonidentical LDPE/FEP dielectric films was used to study the charging propensity of electrode/dielectric and dielectric/dielectric interfaces. The time dependence of the space-charge distribution was subsequently recorded at four temperatures, 20°C, 25°C, 40°C, and 60°C, under field (polarization) and short-circuit (depolarization) conditions. The experimental results demonstrate that temperature plays a significant role in the space-charge dynamics at the dielectric interface. It affects the charge injection, increases the charge mobility and electrical conductivity, and increases the density of shallow traps and trap filling. It is found that traps formed during polarization at high temperature do not remain stable after complete discharge of the multidielectric structure and when poled at low temperatures.

Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory.

PubMed

Kim, Seung-Yoon; Park, Jong Kyung; Hwang, Wan Sik; Lee, Seung-Jun; Lee, Ki-Hong; Pyi, Seung Ho; Cho, Byung Jin

2016-05-01

We investigated the dependence of grain size on the performance of a polycrystalline silicon (poly-Si) channel TFT for application to 3D NAND Flash memory devices. It has been found that the device performance and memory characteristics are strongly affected by the grain size of the poly-Si channel. Higher on-state current, faster program speed, and poor endurance/reliability properties are observed when the poly-Si grain size is large. These are mainly attributed to the different local electric field induced by an oxide valley at the interface between the poly-Si channel and the gate oxide. In addition, the trap density at the gate oxide interface was successfully measured using a charge pumping method by the separation between the gate oxide interface traps and traps at the grain boundaries in the poly-Si channel. The poly-Si channel with larger grain size has lower interface trap density.

Extending the Dynamic Range of the Ion Trap by Differential Mobility Filtration

PubMed Central

Hall, Adam B.; Coy, Stephen L.; Kafle, Amol; Glick, James; Nazarov, Erkinjon

2013-01-01

A miniature, planar, differential ion mobility spectrometer (DMS) was interfaced to an LCQ classic ion trap to conduct selective ion filtration prior to mass analysis in order to extend the dynamic range of the trap. Space charge effects are known to limit the functional ion storage capacity of ion trap mass analyzers and this, in turn, can affect the quality of the mass spectral data generated. This problem is further exacerbated in the analysis of mixtures where the indiscriminate introduction of matrix ions results in premature trap saturation with non-targeted species, thereby reducing the number of parent ions that may be used to conduct MS/MS experiments for quantitation or other diagnostic studies. We show that conducting differential mobility-based separations prior to mass analysis allows the isolation of targeted analytes from electrosprayed mixtures preventing the indiscriminate introduction of matrix ions and premature trap saturation with analytically unrelated species. Coupling these two analytical techniques is shown to enhance the detection of a targeted drug metabolite from a biological matrix. In its capacity as a selective ion filter, the DMS can improve the analytical performance of analyzers such as quadrupole (3-D or linear) and ion cyclotron resonance (FT-ICR) ion traps that depend on ion accumulation. PMID:23797861

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, Eunju, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp; Taguchi, Dai, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp; Iwamoto, Mitsumasa, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp

We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of themore » diodes.« less

Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene.

PubMed

Park, Byoungnam; Whitham, Kevin; Bian, Kaifu; Lim, Yee-Fun; Hanrath, Tobias

2014-12-21

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.

Molecular adsorption steers bacterial swimming at the air/water interface.

PubMed

Morse, Michael; Huang, Athena; Li, Guanglai; Maxey, Martin R; Tang, Jay X

2013-07-02

Microbes inhabiting Earth have adapted to diverse environments of water, air, soil, and often at the interfaces of multiple media. In this study, we focus on the behavior of Caulobacter crescentus, a singly flagellated bacterium, at the air/water interface. Forward swimming C. crescentus swarmer cells tend to get physically trapped at the surface when swimming in nutrient-rich growth medium but not in minimal salt motility medium. Trapped cells move in tight, clockwise circles when viewed from the air with slightly reduced speed. Trace amounts of Triton X100, a nonionic surfactant, release the trapped cells from these circular trajectories. We show, by tracing the motion of positively charged colloidal beads near the interface that organic molecules in the growth medium adsorb at the interface, creating a high viscosity film. Consequently, the air/water interface no longer acts as a free surface and forward swimming cells become hydrodynamically trapped. Added surfactants efficiently partition to the surface, replacing the viscous layer of molecules and reestablishing free surface behavior. These findings help explain recent similar studies on Escherichia coli, showing trajectories of variable handedness depending on media chemistry. The consistent behavior of these two distinct microbial species provides insights on how microbes have evolved to cope with challenging interfacial environments. Copyright © 2013 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Precise measurement of surface plasmon forces at a metal-dielectric interface using a calibrated evanescent wave

NASA Astrophysics Data System (ADS)

Liu, Lulu; Woolf, Alex

2015-03-01

By observing the motion of an optically trapped microscopic colloid, sub-piconewton static and dynamical forces have been measured using a technique called photonic force microscopy. This technique, though potentially powerful, has in the past struggled to make precise measurements in the vicinity of a reflective or metallic interface, due to distortions of the optical field. We introduce a new in-situ, contact-free calibration method for particle tracking using an evanescent wave, and demonstrate its expanded capability by the precise measurement of forces of interaction between a single colloid and the optical field generated by a propagating surface plasmon polariton on gold.

Scalable ion-photon quantum interface based on integrated diffractive mirrors

NASA Astrophysics Data System (ADS)

Ghadimi, Moji; Blūms, Valdis; Norton, Benjamin G.; Fisher, Paul M.; Connell, Steven C.; Amini, Jason M.; Volin, Curtis; Hayden, Harley; Pai, Chien-Shing; Kielpinski, David; Lobino, Mirko; Streed, Erik W.

2017-12-01

Quantum networking links quantum processors through remote entanglement for distributed quantum information processing and secure long-range communication. Trapped ions are a leading quantum information processing platform, having demonstrated universal small-scale processors and roadmaps for large-scale implementation. Overall rates of ion-photon entanglement generation, essential for remote trapped ion entanglement, are limited by coupling efficiency into single mode fibers and scaling to many ions. Here, we show a microfabricated trap with integrated diffractive mirrors that couples 4.1(6)% of the fluorescence from a 174Yb+ ion into a single mode fiber, nearly triple the demonstrated bulk optics efficiency. The integrated optic collects 5.8(8)% of the π transition fluorescence, images the ion with sub-wavelength resolution, and couples 71(5)% of the collected light into the fiber. Our technology is suitable for entangling multiple ions in parallel and overcomes mode quality limitations of existing integrated optical interconnects.

Effects of Interfacial Fluorination on Performance Enhancement of High-k-Based Charge Trap Flash Memory

NASA Astrophysics Data System (ADS)

Wang, Chenjie; Huo, Zongliang; Liu, Ziyu; Liu, Yu; Cui, Yanxiang; Wang, Yumei; Li, Fanghua; Liu, Ming

2013-07-01

The effects of interfacial fluorination on the metal/Al2O3/HfO2/SiO2/Si (MAHOS) memory structure have been investigated. By comparing MAHOS memories with and without interfacial fluorination, it was identified that the deterioration of the performance and reliability of MAHOS memories is mainly due to the formation of an interfacial layer that generates excess oxygen vacancies at the interface. Interfacial fluorination suppresses the growth of the interfacial layer, which is confirmed by X-ray photoelectron spectroscopy depth profile analysis, increases enhanced program/erase efficiency, and improves data retention characteristics. Moreover, it was observed that fluorination at the SiO-HfO interface achieves a more effective performance enhancement than that at the HfO-AlO interface.

XPS studies of structure-induced radiation effects at the Si/SiO2 interface. [X ray Photoelectron Spectroscopy

NASA Technical Reports Server (NTRS)

Grunthaner, F. J.; Lewis, B. F.; Zamini, N.; Maserjian, J.; Madhukar, A.

1980-01-01

The interfacial structures of radiation hard and soft oxides grown by dry and wet processes on silicon substrates have been examined by high-resolution X-ray photoelectron spectroscopy. It is found that the primary difference in the local atomic structure at the Si/SiO2 interface is the significantly higher concentration of strained 120 deg SiO2 bonds and SiO interfacial species in soft samples. Results of in situ radiation damage experiments using low energy electrons (0-20 eV) are reported which correlate with the presence of a strained layer of SiO2 (20 A) at the interface. The results are interpreted in terms of a structural model for hole and electron trap generation by ionizing radiation.

Study of SiO{sub 2}/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chanthaphan, Atthawut, E-mail: chanthaphan@asf.mls.eng.osaka-u.ac.jp; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi

An alternative and effective method to perform interface nitridation for 4H-SiC metal-oxide-semiconductor (MOS) devices was developed. We found that the high-temperature post-oxidation annealing (POA) in N{sub 2} ambient was beneficial to incorporate a sufficient amount of nitrogen atoms directly into thermal SiO{sub 2}/SiC interfaces. Although N{sub 2}-POA was ineffective for samples with thick thermal oxide layers, interface nitridation using N{sub 2}-POA was achieved under certain conditions, i.e., thin SiO{sub 2} layers (< 15 nm) and high annealing temperatures (>1350°C). Electrical characterizations of SiC-MOS capacitors treated with high-temperature N{sub 2}-POA revealed the same evidence of slow trap passivation and fast trapmore » generation that occurred in NO-treated devices fabricated with the optimized nitridation conditions.« less

Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation

NASA Astrophysics Data System (ADS)

Jayawardena, Asanka; Shen, X.; Mooney, P. M.; Dhar, Sarit

2018-06-01

Interfacial charge trapping in 4H–SiC MOS capacitors with P doped SiO2 or phospho-silicate glass (PSG) as a gate dielectric has been investigated with temperature dependent capacitance–voltage measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements. The measurements indicate that P doping in the dielectric results in significant reduction of near-interface electron traps that have energy levels within 0.5 eV of the 4H–SiC conduction band edge. Extracted trap densities confirm that the phosphorus induced near-interface trap reduction is significantly more effective than interfacial nitridation, which is typically used for 4H–SiC MOSFET processing. The CCDLTS measurements reveal that the two broad near-interface trap peaks, named ‘O1’ and ‘O2’, with activation energies around 0.15 eV and 0.4 eV below the 4H–SiC conduction band that are typically observed in thermal oxides on 4H–SiC, are also present in PSG devices. Previous atomic scale ab initio calculations suggested these O1 and O2 traps to be carbon dimers substituted for oxygen dimers (CO=CO) and interstitial Si (Sii) in SiO2, respectively. Theoretical considerations in this work suggest that the presence of P in the near-interfacial region reduces the stability of the CO=CO defects and reduces the density of Sii defects through the network restructuring. Qualitative comparison of results in this work and reported work suggest that the O1 and O2 traps in SiO2/4H–SiC MOS system negatively impact channel mobility in 4H–SiC MOSFETs.

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors

NASA Astrophysics Data System (ADS)

Lu, Han-Han; Xu, Jing-Ping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man

2016-11-01

An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112), the University Development Fund of the University of Hong Kong, China (Grant No. 00600009), and the Hong Kong Polytechnic University, China (Grant No. 1-ZVB1).

Disorder trapping by rapidly moving phase interface in an undercooled liquid

NASA Astrophysics Data System (ADS)

Galenko, Peter; Danilov, Denis; Nizovtseva, Irina; Reuther, Klemens; Rettenmayr, Markus

2017-08-01

Non-equilibrium phenomena such as the disappearance of solute drag, the origin of solute trapping and evolution of disorder trapping occur during fast transformations with originating metastable phases [D.M. Herlach, P.K. Galenko, D. Holland-Moritz, Metastable solids from undrercooled melts (Elsevier, Amsterdam, 2007)]. In the present work, a theoretical investigation of disorder trapping by a rapidly moving phase interface is presented. Using a model of fast phase transformations, a system of governing equations for the diffusion of atoms, and the evolution of both long-range order parameter and phase field variable is formulated. First numerical solutions are carried out for a congruently melting binary alloy system.

Characterization of charge trapping phenomena at III-N/dielectric interfaces

NASA Astrophysics Data System (ADS)

Stradiotto, Roberta; Pobegen, Gregor; Ostermaier, Clemens; Grasser, Tibor

2016-11-01

Charge trapping related phenomena are among the most serious reliability issues in GaN/AlGaN MIS-HEMTs technology. Today, many research efforts are undertaken to investigate and identify the defects responsible for device degradation. This work focuses on the trap sites located close to the interface with the dielectric, which are responsible for large voltage drifts in on-state conditions. We study the response of GaN/AlGaN/SiN systems to small and large signal excitation. Measurements performed with a lock-in amplifier enable us to deeply understand the dynamic behavior because of the improved time resolution and the versatility of the instrument. We investigate the frequency dispersion and the hysteresis of these devices and conclude that direct analysis of impedance characteristics is not sufficient to extract information about the interface trap response. We propose a methodology to study trapping phenomena based on transient measurement analysis, describing the approximations made and their effect on the accuracy of the result. Results on MIS test structures confirm the existence of a broad distribution of trap states. Capture time constants are found to be uniformly distributed in the experimental time window between 50 μs and 100 s.

Density and mobility effects of the majority carriers in organic semiconductors under light excitation

NASA Astrophysics Data System (ADS)

Vagenas, N.; Giannopoulou, A.; Kounavis, P.

2015-01-01

This study demonstrates that the effect of light excitation on the density and the mobility of the majority carriers can be explored in organic semiconductors by modulated photocurrent spectroscopy. The spectra of phase and amplitude of the modulated photocurrent of pentacene films indicate a significant increase in the density of the photogenerated mobile holes (majority carriers). This increase is accompanied by a comparatively much smaller increase of the steady state photocurrent response which can be reconciled with a decrease in the mobility (μ) of holes. The decrease of μ is supported from an unusual increase of the Y/μ ratio of the out-of-phase modulated photocurrent (Y) signal to the mobility under light excitation. It is proposed that the mobile holes, which are generated from the dissociation of the light-created excitons more likely near the pentacene-substrate interface by electron trapping, populate grain boundaries charging them and producing a downward band bending. As a result, potential energy barriers are build up which limit the transport of holes interacting through trapping-detrapping with deep partially occupied traps in the charged grain boundaries. On the other hand, the transport of holes interacting through trapping-detrapping with empty traps is found unaffected.

Positron annihilation studies of the AlOx/SiO2/Si interface in solar cell structures

NASA Astrophysics Data System (ADS)

Edwardson, C. J.; Coleman, P. G.; Li, T.-T. A.; Cuevas, A.; Ruffell, S.

2012-03-01

Film and film/substrate interface characteristics of 30 and 60 nm-thick AlOx films grown on Si substrates by thermal atomic layer deposition (ALD), and 30 nm-thick AlOx films by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlOx/SiOx/Si interface with positron trapping and annihilation occurring in the Si side of the SiOx/Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 ± 2%) before annealing which is increased to 47 ± 2% after annealing. Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiOx interface in the as-deposited sample, and the positron response to it increases after annealing as an SiO2 layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

NASA Astrophysics Data System (ADS)

Zheng, Xue-Feng; Dong, Shuai-Shuai; Ji, Peng; Wang, Chong; He, Yun-Long; Lv, Ling; Ma, Xiao-Hua; Hao, Yue

2018-06-01

This paper provides a systematic study on the bulk traps and interface states in a typical AlGaN/GaN Schottky structure under proton irradiation. After 3 MeV proton irradiation with a dose of 5 × 1014 H+/cm2, a positive flat band voltage shift of 0.3 V is observed according to the capacitance-voltage (C-V) measurements. Based on this, the distribution of electrons across AlGaN and GaN layers is extracted. Associated with the numerical calculation, direct experimental evidences demonstrate that the bulk traps within the AlGaN layer dominate the carrier removal effect under proton irradiation. Furthermore, the effects of proton irradiation on AlGaN/GaN interface states were investigated by utilizing the frequency dependent conductance technique. The time constants are extracted, which increase from 1.10-2.53 μs to 3.46-37 μs after irradiation. Meanwhile, it shows that the density of interface states increases from 9.45 × 1011-1.70 × 1013 cm-2.eV-1 to 1.8 × 1012-1.8 × 1013 cm-2.eV-1 with an increase in trap activation energy from 0.34 eV-0.32 eV to 0.41 eV-0.35 eV after irradiation. The Coulomb scattering effect of electron trapping at interface states with deeper energy levels is utilized to explain the mobility degradation in this paper.

Dynamical hologram generation for high speed optical trapping of smart droplet microtools

PubMed Central

Lanigan, P. M. P.; Munro, I.; Grace, E. J.; Casey, D. R.; Phillips, J.; Klug, D. R.; Ces, O.; Neil, M. A. A.

2012-01-01

This paper demonstrates spatially selective sampling of the plasma membrane by the implementation of time-multiplexed holographic optical tweezers for Smart Droplet Microtools (SDMs). High speed (>1000fps) dynamical hologram generation was computed on the graphics processing unit of a standard display card and controlled by a user friendly LabView interface. Time multiplexed binary holograms were displayed in real time and mirrored to a ferroelectric Spatial Light Modulator. SDMs were manufactured with both liquid cores (as previously described) and solid cores, which confer significant advantages in terms of stability, polydispersity and ease of use. These were coated with a number of detergents, the most successful based upon lipids doped with transfection reagents. In order to validate these, trapped SDMs were maneuvered up to the plasma membrane of giant vesicles containing Nile Red and human biliary epithelial (BE) colon cancer cells with green fluorescent labeled protein (GFP)-labeled CAAX (a motif belonging to the Ras protein). Bright field and fluorescence images showed that successful trapping and manipulation of multiple SDMs in x, y, z was achieved with success rates of 30-50% and that subsequent membrane-SDM interactions led to the uptake of Nile Red or GFP-CAAX into the SDM. PMID:22808432

Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors

NASA Astrophysics Data System (ADS)

Karamoto, Yuki; Zhang, Xufang; Okamoto, Dai; Sometani, Mitsuru; Hatakeyama, Tetsuo; Harada, Shinsuke; Iwamuro, Noriyuki; Yano, Hiroshi

2018-06-01

We used a conductance method to investigate the interface characteristics of a SiO2/p-type 4H-SiC MOS structure fabricated by dry oxidation. It was found that the measured equivalent parallel conductance–frequency (G p/ω–f) curves were not symmetric, showing that there existed both high- and low-frequency signals. We attributed high-frequency responses to fast interface states and low-frequency responses to near-interface oxide traps. To analyze the fast interface states, Nicollian’s standard conductance method was applied in the high-frequency range. By extracting the high-frequency responses from the measured G p/ω–f curves, the characteristics of the low-frequency responses were reproduced by Cooper’s model, which considers the effect of near-interface traps on the G p/ω–f curves. The corresponding density distribution of slow traps as a function of energy level was estimated.

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

PubMed Central

Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

2017-01-01

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm−2 eV−1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement. PMID:28084434

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

PubMed

Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

2017-01-13

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

Surface damage characterization of FBK devices for High Luminosity LHC (HL-LHC) operations

NASA Astrophysics Data System (ADS)

Moscatelli, F.; Passeri, D.; Morozzi, A.; Dalla Betta, G.-F.; Mattiazzo, S.; Bomben, M.; Bilei, G. M.

2017-12-01

The very high fluences (e.g. up to 2×1016 1 MeV neq/cm2) and total ionising doses (TID) of the order of 1 Grad, expected at the High Luminosity LHC (HL-LHC), impose new challenges for the design of effective, radiation resistant detectors. Ionising energy loss is the dominant effect for what concerns SiO2 and SiO2/Si interface radiation damage. In particular, surface damage can create a positive charge layer near the SiO2/Si interface and interface traps along the SiO2/Si interface, which strongly influence the breakdown voltage, the inter-electrode isolation and capacitance, and might also impact the charge collection properties of silicon sensors. To better understand in a comprehensive framework the complex and articulated phenomena related to surface damage at these very high doses, measurements on test structures have been carried out in this work (e.g. C-V and I-V). In particular, we have studied the properties of the SiO2 layer and of the SiO2/Si interface, using MOS capacitors, gated diodes (GD) and MOSFETs manufactured by FBK on high-resistivity n-type and p-type silicon, before and after irradiation with X-rays in the range from 50 krad(SiO2) to 20 Mrad(SiO2). Relevant parameters have been determined for all the tested devices, converging in the oxide charge density NOX, the surface generation velocity s0 and the integrated interface-trap density NIT dose-dependent values. These parameters have been extracted to both characterize the technology as a function of the dose and to be used in TCAD simulations for the surface damage effect modeling and the analysis and optimization of different classes of detectors for the next HEP experiments.

Current Approach in Surface Plasmons for Thin Film and Wire Array Solar Cell Applications

PubMed Central

Zhou, Keya; Guo, Zhongyi; Liu, Shutian; Lee, Jung-Ho

2015-01-01

Surface plasmons, which exist along the interface of a metal and a dielectric, have been proposed as an efficient alternative method for light trapping in solar cells during the past ten years. With unique properties such as superior light scattering, optical trapping, guide mode coupling, near field concentration, and hot-electron generation, metallic nanoparticles or nanostructures can be tailored to a certain geometric design to enhance solar cell conversion efficiency and to reduce the material costs. In this article, we review current approaches on different kinds of solar cells, such as crystalline silicon (c-Si) and amorphous silicon (a-Si) thin film solar cells, organic solar cells, nanowire array solar cells, and single nanowire solar cells. PMID:28793457

The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Taeho; Hur, Jihyun; Jeon, Sanghun

2016-05-01

Defects in oxide semiconductors not only influence the initial device performance but also affect device reliability. The front channel is the major carrier transport region during the transistor turn-on stage, therefore an understanding of defects located in the vicinity of the interface is very important. In this study, we investigated the dynamics of charge transport in a nanocrystalline hafnium-indium-zinc-oxide thin-film transistor (TFT) by short pulse I-V, transient current and 1/f noise measurement methods. We found that the fast charging behavior of the tested device stems from defects located in both the front channel and the interface, following a multi-trapping mechanism. We found that a silicon-nitride stacked hafnium-indium-zinc-oxide TFT is vulnerable to interfacial charge trapping compared with silicon-oxide counterpart, causing significant mobility degradation and threshold voltage instability. The 1/f noise measurement data indicate that the carrier transport in a silicon-nitride stacked TFT device is governed by trapping/de-trapping processes via defects in the interface, while the silicon-oxide device follows the mobility fluctuation model.

On the origin of the driving force in the Marangoni propelled gas bubble trapping mechanism.

PubMed

Miniewicz, A; Quintard, C; Orlikowska, H; Bartkiewicz, S

2017-07-19

Gas bubbles can be trapped and then manipulated with laser light. In this report, we propose the detailed optical trapping mechanism of gas bubbles confined inside a thin light-absorbing liquid layer between two glass plates. The necessary condition of bubble trapping in this case is the direct absorption of light by the solution containing a dye. Due to heat release, fluid whirls propelled by the surface Marangoni effect at the liquid/gas interface emerge and extend to large distances. We report the experimental microscopic observation of the origin of whirls at an initially flat liquid/air interface as well as at the curved interface of a liquid/gas bubble and support this finding with advanced numerical simulations using the finite element method within the COMSOL Multiphysics platform. The simulation results were in good agreement with the observations, which allowed us to propose a simple physical model for this particular trapping mechanism, to establish the origin of forces attracting bubbles toward a laser beam and to predict other phenomena related to this effect.

Full-range electrical characteristics of WS{sub 2} transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Jatinder; Bellus, Matthew Z.; Chiu, Hsin-Ying, E-mail: chiu@ku.edu

We fabricated transistors formed by few layers to bulk single crystal WS{sub 2} to quantify the factors governing charge transport. We established a capacitor network to analyze the full-range electrical characteristics of the channel, highlighting the role of quantum capacitance and interface trap density. We find that the transfer characteristics are mainly determined by the interplay between quantum and oxide capacitances. In the OFF-state, the interface trap density (<10{sup 12} cm{sup –2}) is a limiting factor for the subthreshold swing. Furthermore, the superior crystalline quality and the low interface trap density enabled the subthreshold swing to approach the theoretical limit onmore » a back-gated device on SiO{sub 2}/Si substrate.« less

IGDS/TRAP Interface Program (ITIP). Software Design Document

NASA Technical Reports Server (NTRS)

Jefferys, Steve; Johnson, Wendell

1981-01-01

The preliminary design of the IGDS/TRAP Interface Program (ITIP) is described. The ITIP is implemented on the PDP 11/70 and interfaces directly with the Interactive Graphics Design System and the Data Management and Retrieval System. The program provides an efficient method for developing a network flow diagram. Performance requirements, operational rquirements, and design requirements are discussed along with sources and types of input and destination and types of output. Information processing functions and data base requirements are also covered.

Interface trapping in (2 ¯ 01 ) β-Ga2O3 MOS capacitors with deposited dielectrics

NASA Astrophysics Data System (ADS)

Jayawardena, Asanka; Ramamurthy, Rahul P.; Ahyi, Ayayi C.; Morisette, Dallas; Dhar, Sarit

2018-05-01

The electrical properties of interfaces and the impact of post-deposition annealing have been investigated in gate oxides formed by low pressure chemical vapor deposition (LPCVD SiO2) and atomic layer deposition (Al2O3) on ( 2 ¯ 01 ) oriented n-type β-Ga2O3 single crystals. Capacitance-voltage based methods have been used to extract the interface state densities, including densities of slow `border' traps at the dielectric-Ga2O3 interfaces. It was observed that SiO2-β-Ga2O3 has a higher interface and border trap density than the Al2O3-β-Ga2O3. An increase in shallow interface states was also observed at the Al2O3-β-Ga2O3 interface after post-deposition annealing at higher temperature suggesting the high temperature annealing to be detrimental for Al2O3-Ga2O3 interfaces. Among the different dielectrics studied, LPCVD SiO2 was found to have the lowest dielectric leakage and the highest breakdown field, consistent with a higher conduction band-offset. These results are important for the processing of high performance β-Ga2O3 MOS devices as these factors will critically impact channel transport, threshold voltage stability, and device reliability.

Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO2 interfaces

NASA Astrophysics Data System (ADS)

Huang, Jianqiu; Tea, Eric; Li, Guanchen; Hin, Celine

2017-06-01

The Anode Hydrogen Release (AHR) mechanism at interfaces is responsible for the generation of defects, that traps charge carriers and can induce dielectric breakdown in Metal-Oxide-Semiconductor Field Effect Transistors. The AHR has been extensively studied at Si/SiO2 interfaces but its characteristics at metal-silica interfaces remain unclear. In this study, we performed Density Functional Theory (DFT) calculations to study the hydrogen release mechanism at the typical Al/SiO2 metal-oxide interface. We found that interstitial hydrogen atoms can break interfacial Alsbnd Si bonds, passivating a Si sp3 orbital. Interstitial hydrogen atoms can also break interfacial Alsbnd O bonds, or be adsorbed at the interface on aluminum, forming stable Alsbnd Hsbnd Al bridges. We showed that hydrogenated Osbnd H, Sisbnd H and Alsbnd H bonds at the Al/SiO2 interfaces are polarized. The resulting bond dipole weakens the Osbnd H and Sisbnd H bonds, but strengthens the Alsbnd H bond under the application of a positive bias at the metal gate. Our calculations indicate that Alsbnd H bonds and Osbnd H bonds are more important than Sisbnd H bonds for the hydrogen release process.

A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

2018-04-01

In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babadi, A. S., E-mail: aein.shiri-babadi@eit.lth.se; Lind, E.; Wernersson, L. E.

A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holesmore » even in depletion, so a full charge treatment is necessary.« less

A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors

NASA Astrophysics Data System (ADS)

Djezzar, Boualem; Tahi, Hakim; Benabdelmoumene, Abdelmadjid; Chenouf, Amel; Kribes, Youcef

2012-11-01

In this paper, we present a new method, named on the fly oxide trap (OTFOT), to extract the bias temperature instability (BTI) in MOS transistors. The OTFOT method is based on charge pumping technique (CP) at low and high frequencies. We emphasize on the theoretical-based concept, giving a clear insight on the easy-use of the OTFOT methodology and demonstrating its viability to characterize the negative BTI (NBTI). Using alternatively high and low frequencies, OTFOT method separates the interface-traps (ΔNit) and border-trap (ΔNbt) (switching oxide-trap) densities independently and also their contributions to the threshold voltage shift (ΔVth), without needing additional methods. The experimental results, from two experimental scenarios, showing the extraction of NBTI-induced shifts caused by interface- and oxide-trap increases are also presented. In the first scenario, all stresses are performed on the same transistor. It exhibits an artifact value of exponent n. In the second scenario, each voltage stress is applied only on one transistor. Its results show an average n of 0.16, 0.05, and 0.11 for NBTI-induced ΔNit, ΔNbt, ΔVth, respectively. Therefore, OTFOT method can contribute to further understand the behavior of the NBTI degradation, especially through the threshold voltage shift components such as ΔVit and ΔVot caused by interface-trap and border-trap, respectively.

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu Shiyang; Nakajima, Anri; Ohashi, Takuo

2005-12-01

The interface trap generation ({delta}N{sub it}) and fixed oxide charge buildup ({delta}N{sub ot}) under negative bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultrathin (2 nm) plasma-nitrided SiON gate dielectrics were studied using a modified direct-current-current-voltage method and a conventional subthreshold characteristic measurement. Different stress time dependences were shown for {delta}N{sub it} and {delta}N{sub ot}. At the earlier stress times, {delta}N{sub it} dominates the threshold voltage shift ({delta}V{sub th}) and {delta}N{sub ot} is negligible. With increasing stress time, the rate of increase of {delta}N{sub it} decreases continuously, showing a saturating trend for longer stress times, while {delta}N{submore » ot} still has a power-law dependence on stress time so that the relative contribution of {delta}N{sub ot} increases. The thermal activation energy of {delta}N{sub it} and the NBTI lifetime of pMOSFETs, compared at a given stress voltage, are independent of the peak nitrogen concentration of the SiON film. This indicates that plasma nitridation is a more reliable method for incorporating nitrogen in the gate oxide.« less

Design and Fabrication of Cryostat Interface and Electronics for High Performance Antimatter Trap (HI-PAT)

NASA Technical Reports Server (NTRS)

Smith, Gerald A.

1999-01-01

Included in Appendix I to this report is a complete set of design and assembly schematics for the high vacuum inner trap assembly, cryostat interfaces and electronic components for the MSFC HI-PAT. Also included in the final report are summaries of vacuum tests, and electronic tests performed upon completion of the assembly.

Nonradiative recombination centers and electrical aging of organic light-emitting diodes: Direct connection between accumulation of trapped charge and luminance loss

NASA Astrophysics Data System (ADS)

Kondakov, D. Y.; Sandifer, J. R.; Tang, C. W.; Young, R. H.

2003-01-01

Organic light-emitting diodes (OLEDs) are attractive for display applications because of their high brightness, low driving voltage, and tunable color. Their operating lifetimes, hundreds or thousands of hours, are sufficient for only a limited range of applications. The luminance efficiency decreases gradually as the device is operated (electrically aged), for reasons that are poorly understood. A prototypical OLED has the structure anode|HTL|ETL|cathode, where the HTL and ETL are hole- and electron-transporting layers, and the recombination and emission occur at or near the HTL|ETL interface. We find that the decreasing luminance efficiency is linearly correlated with an accumulation of immobile positive charge at the HTL|ETL interface, and the magnitude of the charge is comparable to the total charge at that interface when an unaged device is operated. A natural explanation of the connection between the two phenomena is that electrical aging either generates hole traps (and trapped holes) or drives metal ions into the device, and that either species act as nonradiative recombination centers. To estimate the accumulating immobile charge and determine its location, we use a variant of a recently introduced capacitance versus voltage technique. In the prototypical OLEDs described here, the HTL is a ca. 1000 Å layer of NPB, and the ETL is a 300-1800 Å layer of Alq3. A device with an additional "emission layer" (EML) of an anthracene derivative between the HTL and ETL, in which the electroluminescence spectrum is characteristic of the EML, behaved similarly. We surmise that the phenomena reported here may be common to a wider variety of OLED structures and compositions.

Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena

This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{supmore » 11} cm{sup −2}).« less

Comparative study of solute trapping and Gibbs free energy changes at the phase interface during alloy solidification under local nonequilibrium conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobolev, S. L., E-mail: sobolev@icp.ac.ru

An analytical model has been developed to describe the influence of solute trapping during rapid alloy solidification on the components of the Gibbs free energy change at the phase interface with emphasis on the solute drag energy. For relatively low interface velocity V < V{sub D}, where V{sub D} is the characteristic diffusion velocity, all the components, namely mixing part, local nonequilibrium part, and solute drag, significantly depend on solute diffusion and partitioning. When V ≥ V{sub D}, the local nonequilibrium effects lead to a sharp transition to diffusionless solidification. The transition is accompanied by complete solute trapping and vanishingmore » solute drag energy, i.e. partitionless and “dragless” solidification.« less

Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors

NASA Astrophysics Data System (ADS)

Buchanan, D. A.; Marwick, A. D.; Dimaria, D. J.; Dori, L.

1994-09-01

Redistribution of hydrogen caused by hot-electron injection has been studied by hydrogen depth profiling with N-15 nuclear reaction analysis and electrical methods. Internal photoemission and Fowler-Nordheim injection were used for electron injection into large Al-gate and polysilicon-gate capacitors, respectively. A hydrogen-rich layer (about 10(exp 15) atoms/sq cm) observed at the Al/SiO2 interface was found to serve as the source of hydrogen during the hot-electron stress. A small fraction of the hydrogen released from this layer was found to be retrapped near the Si/SiO2 interface for large electron fluences in the Al-gate samples. Within the limit of detectability, about 10(exp 14)/sq cm, no hydrogen was measured using nuclear reaction analysis in the polysilicon-gate samples. The buildup of hydrogen at the Si/SiO2 interface exhibits a threshold at about 1 MV/cm, consistent with the threshold for electron heating in SiO2. In the 'wet' SiO2 films with purposely introduced excess hydrogen, the rate of hydrogen buildup at the Si/SiO2 interface is found to be significantly greater than that found in the 'dry' films. During electron injection, hydrogen redistribution was also confirmed via the deactivation of boron dopant in the silicon substrate. The generation rates of interface states, neutral electron traps, and anomalous positive charge are found to increase with increasing hydrogen buildup in the substrate and the initial hydrogen concentration in the film. It is concluded that the generation of defects is preceded by the hot-electron-induced release and transport of atomic hydrogen and it is the chemical reaction of this species within the metal-oxide-semiconductor structure that generates the electrically active defects.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Jeong

The research program reported here is focused on critical issues that represent conspicuous gaps in current understanding of rapid solidification, limiting our ability to predict and control microstructural evolution (i.e. morphological dynamics and microsegregation) at high undercooling, where conditions depart significantly from local equilibrium. More specifically, through careful application of phase-field modeling, using appropriate thin-interface and anti-trapping corrections and addressing important details such as transient effects and a velocity-dependent (i.e. adaptive) numerics, the current analysis provides a reasonable simulation-based picture of non-equilibrium solute partitioning and the corresponding oscillatory dynamics associated with single-phase rapid solidification and show that this method ismore » a suitable means for a self-consistent simulation of transient behavior and operating point selection under rapid growth conditions. Moving beyond the limitations of conventional theoretical/analytical treatments of non-equilibrium solute partitioning, these results serve to substantiate recent experimental findings and analytical treatments for single-phase rapid solidification. The departure from the equilibrium solid concentration at the solid-liquid interface was often observed during rapid solidification, and the energetic associated non-equilibrium solute partitioning has been treated in detail, providing possible ranges of interface concentrations for a given growth condition. Use of these treatments for analytical description of specific single-phase dendritic and cellular operating point selection, however, requires a model for solute partitioning under a given set of growth conditions. Therefore, analytical solute trapping models which describe the chemical partitioning as a function of steady state interface velocities have been developed and widely utilized in most of the theoretical investigations of rapid solidification. However, these solute trapping models are not rigorously verified due to the difficulty in experimentally measuring under rapid growth conditions. Moreover, since these solute trapping models include kinetic parameters which are difficult to directly measure from experiments, application of the solute trapping models or the associated analytic rapid solidification model is limited. These theoretical models for steady state rapid solidification which incorporate the solute trapping models do not describe the interdependency of solute diffusion, interface kinetics, and alloy thermodynamics. The phase-field approach allows calculating, spontaneously, the non-equilibrium growth effects of alloys and the associated time-dependent growth dynamics, without making the assumptions that solute partitioning is an explicit function of velocity, as is the current convention. In the research described here, by utilizing the phase-field model in the thin-interface limit, incorporating the anti-trapping current term, more quantitatively valid interface kinetics and solute diffusion across the interface are calculated. In order to sufficiently resolve the physical length scales (i.e. interface thickness and diffusion boundary length), grid spacings are continually adjusted in calculations. The full trajectories of transient planar growth dynamics under rapid directional solidification conditions with different pulling velocities are described. As a validation of a model, the predicted steady state conditions are consistent with the analytic approach for rapid growth. It was confirmed that rapid interface dynamics exhibits the abrupt acceleration of the planar front when the effect of the non-equilibrium solute partitioning at the interface becomes signi ficant. This is consistent with the previous linear stability analysis for the non-equilibrium interface dynamics. With an appropriate growth condition, the continuous oscillation dynamics was able to be simulated using continually adjusting grid spacings. This oscillatory dynamics including instantaneous jump of interface velocities are consistent with a previous phenomenological model by and a numerical investigation, which may cause the formation of banded structures. Additionally, the selection of the steady state growth dynamics in the highly undercooled melt is demonstrated. The transition of the growth morphology, interface velocity selection, and solute trapping phenomenon with increasing melt supersaturations was described by the phase-field simulation. The tip selection for the dendritic growth was consistent with Ivantsov's function, and the non-equilibrium chemical partitioning behavior shows good qualitative agreement with the Aziz's solute trapping model even though the model parameter(V D) remains as an arbitrary constant. This work is able to show the possibility of comprehensive description of rapid alloy growth over the entire time-dependent non-equilibrium phenomenon.« less

Sub-mm Scale Fiber Guided Deep/Vacuum Ultra-Violet Optical Source for Trapped Mercury Ion Clocks

NASA Technical Reports Server (NTRS)

Yi, Lin; Burt, Eric A.; Huang, Shouhua; Tjoelker, Robert L.

2013-01-01

We demonstrate the functionality of a mercury capillary lamp with a diameter in the sub-mm range and deep ultraviolet (DUV)/ vacuum ultraviolet (VUV) radiation delivery via an optical fiber integrated with the capillary. DUV spectrum control is observed by varying the fabrication parameters such as buffer gas type and pressure, capillary diameter, electrical resonator design, and temperature. We also show spectroscopic data of the 199Hg+ hyper-fine transition at 40.5GHz when applying the above fiber optical design. We present efforts toward micro-plasma generation in hollow-core photonic crystal fiber with related optical design and theoretical estimations. This new approach towards a more practical DUV optical interface could benefit trapped ion clock developments for future ultra-stable frequency reference and time-keeping applications.

Annual Conference on Nuclear and Space Radiation Effects, 15th, University of New Mexico, Albuquerque, N. Mex., July 18-21, 1978, Proceedings

NASA Technical Reports Server (NTRS)

Simons, M.

1978-01-01

Radiation effects in MOS devices and circuits are considered along with radiation effects in materials, space radiation effects and spacecraft charging, SGEMP, IEMP, EMP, fabrication of radiation-hardened devices, radiation effects in bipolar devices and circuits, simulation, energy deposition, and dosimetry. Attention is given to the rapid anneal of radiation-induced silicon-sapphire interface charge trapping, cosmic ray induced errors in MOS memory cells, a simple model for predicting radiation effects in MOS devices, the response of MNOS capacitors to ionizing radiation at 80 K, trapping effects in irradiated and avalanche-injected MOS capacitors, inelastic interactions of electrons with polystyrene, the photoelectron spectral yields generated by monochromatic soft X radiation, and electron transport in reactor materials.

Effect of interface-dependent crystalline boundary on sub-threshold characteristics in a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistor

NASA Astrophysics Data System (ADS)

Kwon, Jin-Hyuk; Kang, In Man; Bae, Jin-Hyuk

2014-03-01

We demonstrate how the sub-threshold characteristics are affected by the density of crystalline domain boundaries directly governed by an organic semiconductor (OSC) - a gate insulator interface in a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) thin-film transistor (TFT). For generation of an engineered interface, a self assembled monolayer of octadecyltricholorosilane (OTS) was produced between a solution processed TIPS-pentacene film and a silicon dioxide layer. The interfacial charge trap density (Ntrap) deduced from the sub-threshold characteristics was significantly minimized after OTS treatment due to reduced crystal domain boundaries in the TIPS-pentacene film. In addition, the carrier mobility exhibits a value twice as large by OTS treatment. It is found that less crystal domain boundaries in the solution-processed OSC obtained from the engineered interface play an important role in inducing improved sub-threshold characteristics together with increased carrier mobility in organic TFTs.

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locatemore » in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.« less

Interface investigation of solution processed high- κ ZrO2/Si MOS structure by DLTS

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Rao, Ksr Koteswara

The interfacial region is dominating due to the continuous downscaling and integration of high- k oxides in CMOS applications. The accurate characterization of high- k oxides/semiconductor interface has the significant importance towards its usage in memory and thin film devices. The interface traps at the high - k /semiconductor interface can be quantified by deep level transient spectroscopy (DLTS) with better accuracy in contrast to capacitance-voltage (CV) and conductance technique. We report the fabrication of high- k ZrO2 films on p-Si substrate by a simple and inexpensive sol-gel spin-coating technique. Further, the ZrO2/Si interface is characterized through DLTS. The flat-band voltage (VFB) and the density of slow interface states (oxide trapped charges) extracted from CV characteristics are 0.37 V and 2x10- 11 C/cm2, respectively. The activation energy, interface state density and capture cross-section quantified by DLTS are EV + 0.42 eV, 3.4x1011 eV- 1 cm- 2 and 5.8x10- 18 cm2, respectively. The high quality ZrO2 films own high dielectric constant 15 with low leakage current density might be an appropriate insulating layer in future electronic application. The low value of interface state density and capture cross-section are the indication of high quality interface and the defect present at the interface may not affect the device performance to a great extent. The DLTS study provides a broad understanding about the traps present at the interface of spin-coated ZrO2/Si.

Effect of gamma-ray irradiation on the surface states of MOS tunnel junctions

NASA Technical Reports Server (NTRS)

Ma, T. P.; Barker, R. C.

1974-01-01

Gamma-ray irradiation with doses up to 8 megarad produces no significant change on either the C(V) or the G(V) characteristics of MOS tunnel junctions with intermediate oxide thicknesses (40-60 A), whereas the expected flat-band shift toward negative electrode voltages occurs in control thick oxide capacitors. A simple tunneling model would explain the results if the radiation-generated hole traps are assumed to lie below the valence band of the silicon. The experiments also suggest that the observed radiation-generated interface states in conventional MOS devices are not due to the radiation damage of the silicon surface.

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

PubMed

Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

2017-12-27

Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

NASA Astrophysics Data System (ADS)

Zeng, Ke; Singisetti, Uttam

2017-09-01

The interface trap density (Dit) of the SiO2/β-Ga2O3 interface in ( 2 ¯ 01), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of Dit in the bandgap. At room temperature, higher Dit is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the Dit value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.

Effects of surface and interface traps on exciton and multi-exciton dynamics in core/shell quantum dots

NASA Astrophysics Data System (ADS)

Bozio, Renato; Righetto, Marcello; Minotto, Alessandro

2017-08-01

Exciton interactions and dynamics are the most important factors determining the exceptional photophysical properties of semiconductor quantum dots (QDs). In particular, best performances have been obtained for ingeniously engineered core/shell QDs. We have studied two factors entering in the exciton decay dynamics with adverse effects for the luminescence efficiency: exciton trapping at surface and interface traps, and non-radiative Auger recombination in QDs carrying either net charges or multiple excitons. In this work, we present a detailed study into the optical absorption, fluorescence dynamics and quantum yield, as well as ultrafast transient absorption properties of CdSe/CdS, CdSe/Cd0.5Zn0.5S, and CdSe/ZnS QDs as a function of shell thickness. It turns out that de-trapping processes play a pivotal role in determining steady state emission properties. By studying the excitation dependent photoluminescence quantum yields (PLQY) in different CdSe/CdxZn1-xS (x = 0, 0.5, 1) QDs, we demonstrate the different role played by hot and cold carrier trapping rates in determining fluorescence quantum yields. Finally, the use of global analysis allows us untangling the complex ultrafast transient absorption signals. Smoothing of interface potential, together with effective surface passivation, appear to be crucial factors in slowing down both Auger-based and exciton trapping recombination processes.

Trapping effects in irradiated and avalanche-injected MOS capacitors

NASA Technical Reports Server (NTRS)

Bakowski, M.; Cockrum, R. H.; Zamani, N.; Maserjian, J.; Viswanathan, C. R.

1978-01-01

The trapping parameters for holes, and for electrons in the presence of trapped holes, have been measured from a set of wafers with different oxide thickness processed under controlled conditions. The trap cross-sections and densities indicate at least three trap species, including an interfacial species, a dominant bulk species which is determined to tail off from the silicon interface, and a third, lower density bulk species that is distributed throughout the oxide.

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

NASA Astrophysics Data System (ADS)

Taoka, Noriyuki; Kubo, Toshiharu; Yamada, Toshikazu; Egawa, Takashi; Shimizu, Mitsuaki

2018-01-01

The electrical interface properties of GaN metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance-voltage technique, Terman method, and conductance method. We found that O3 and the alternate supply of H2O and O3 (AS-HO) are effective for reducing the interface trap density (D it) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation (σs) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a SiO2 layer formed by chemical vapor deposition despite the small D it values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, σs has to be reduced to improve the performances and reliability of GaN devices with the Al2O3/GaN interfaces.

ZrO2 film interfaces with Si and SiO2

NASA Astrophysics Data System (ADS)

Lopez, C. M.; Suvorova, N. A.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

2005-08-01

The interface formed by the thermal oxidation of sputter-deposited Zr metal onto Si(100)- and SiO2-coated Si(100) wafers was studied in situ and in real time using spectroscopic ellipsometry (SE) in the 1.5-4.5 photon energy range and mass spectrometry of recoiled ions (MSRI). SE yielded optical properties for the film and interface and MSRI yielded film and interface composition. An optical model was developed and verified using transmission electron microscopy. Interfacial reaction of the ZrO2 was observed for both substrates, with more interaction for Si substrates. Equivalent oxide thicknesses and interface trap levels were determined on capacitors with lower trap levels found on samples with a thicker SiO2 underlayer. In addition to the optical properties for the intermixed interface layer, the optical properties for Zr metal and unreacted ZrO2 are also reported.

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

NASA Astrophysics Data System (ADS)

Song, Liang; Fu, Kai; Zhang, Zhili; Sun, Shichuang; Li, Weiyi; Yu, Guohao; Hao, Ronghui; Fan, Yaming; Shi, Wenhua; Cai, Yong; Zhang, Baoshun

2017-12-01

In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It's indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

Surfing with capillary waves: a survival strategy for trapped bees

NASA Astrophysics Data System (ADS)

Roh, Chris; Gharib, Morteza

2017-11-01

Honeybees are able to propel themselves at the water surface. A rapid vibration (30-220 Hz) of wings at the air-water interface results in a locomotion speed of 3-4 cm/s. A mechanism for generating thrust required for achieving and maintaining such speed must be different from their mechanism of flight inasmuch as they are in a different fluid environment. In this study, we present the thrust generating mechanism of the honeybee at the air-water interface. A close observation of the wing's interaction with the water surface showed that the wing does not penetrate nor detach from the water surface. Moreover, the stroke speed of the wing exceeds the minimum capillary wave speed, which signifies that the wing constantly generates the capillary wave by pulling on the surface with its wetted underside. Observation of such interaction suggests that honeybee's locomotion at the water surface resembles surfing on the self-generated capillary wave. A further evidence of described mechanism is explored by constructing a similarly sized mechanical model. This material is based upon work supported by the National Science Foundation under Grant No. CBET-1511414; additional support by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1144469.

Motion of Optically Heated Spheres at the Water-Air Interface.

PubMed

Girot, A; Danné, N; Würger, A; Bickel, T; Ren, F; Loudet, J C; Pouligny, B

2016-03-22

A micrometer-sized spherical particle classically equilibrates at the water-air interface in partial wetting configuration, causing about no deformation to the interface. In condition of thermal equilibrium, the particle just undergoes faint Brownian motion, well visible under a microscope. We report experimental observations when the particle is made of a light-absorbing material and is heated up by a vertical laser beam. We show that, at small laser power, the particle is trapped in on-axis configuration, similarly to 2-dimensional trapping of a transparent sphere by optical forces. Conversely, on-axis trapping becomes unstable at higher power. The particle escapes off the laser axis and starts orbiting around the axis. We show that the laser-heated particle behaves as a microswimmer with velocities on the order of several 100 μm/s with just a few milliwatts of laser power.

Electrical properties of MOS devices fabricated on the 4H-SiC C-face.

NASA Astrophysics Data System (ADS)

Chen, Zengjun; Ahyi, A. C.; Williams, J. R.

2007-11-01

The electrical characteristics of MOS devices fabricated on the carbon face of 4H-SiC will be described. The C-face has a higher oxidation rate and a higher interface trap density compared to the Si-face. The thermal oxidation rate and the distribution of interface traps under different oxidation conditions will be discussed in this presentation. Sequential post-oxidation anneals in nitric oxide and hydrogen effectively reduces the interface density (Dit) near the conduction band edge. However, deeper in the band gap, the trap density remains higher compared to the Si-face. Time-dependent dielectric breakdown (TDDB) studies have also been performed to investigate oxide reliability on the C-face, and current-voltage measurements show that a low barrier height against carrier injection likely contributes to oxide degradation. Nevertheless, the effective channel mobility and threshold voltage for n-channel C-face lateral MOSFETs compare favorably with similar Si-face devices.

A pentacene monolayer trapped between graphene and a substrate.

PubMed

Zhang, Qicheng; Peng, Boyu; Chan, Paddy Kwok Leung; Luo, Zhengtang

2015-09-21

A self-assembled pentacene monolayer can be fabricated between the solid-solid interface of few-layered graphene (FLG) and the mica substrate, through a diffusion-spreading method. By utilizing a transfer method that allows us to sandwich pentacene between graphene and mica, followed by controlled annealing, we enabled the diffused pentacene to be trapped in the interfaces and led to the formation of a stable monolayer. We found that the formation of a monolayer is kinetically favored by using a 2D Ising lattice gas model for pentacene trapped between the graphene-substrate interfaces. This kinetic Monte Carlo simulation results indicate that, due to the graphene substrate enclosure, the spreading of the first layer proceeds faster than the second layer, as the kinetics favors the filling of voids by molecules from the second layer. This graphene assisted monolayer assembly method provides a new avenue for the fabrication of two-dimensional monolayer structures.

Trap-assisted transition between Schottky emission and Fowler-Nordheim tunneling in the interfacial-memristor based on Bi2S3 nano-networks

NASA Astrophysics Data System (ADS)

Tian, Ye; Jiang, Lianjun; Zhang, Xuejun; Zhang, Guangfu; Zhu, Qiuxiang

2018-03-01

For the usage of the memristors in functional circuits, a predictive physical model is of great importance. However, other than the developments of the memristive models accounting bulky effects, the achievements on simulating the interfacial memristance are still insufficient. Here we provide a physical model to describe the electrical switching of the memristive interface. It considers the trap-assisted transition between Schottky emission and Fowler-Nordheim tunneling, and successfully reproduces the memristive behaviors occurring on the interface between Bi2S3 nano-networks and F-doped SnO2. Such success not only allows us uncover several features of the memristive interface including the distribution nature of the traps, barrier height/thickness and so on, but also provides a foundation from which we can quantitatively simulate the real interfacial memristor.

Characterization of the acoustic field generated by a horn shaped ultrasonic transducer

NASA Astrophysics Data System (ADS)

Hu, B.; Lerch, J. E.; Chavan, A. H.; Weber, J. K. R.; Tamalonis, A.; Suthar, K. J.; DiChiara, A. D.

2017-09-01

A horn shaped Langevin ultrasonic transducer used in a single axis levitator was characterized to better understand the role of the acoustic profile in establishing stable traps. The method of characterization included acoustic beam profiling performed by raster scanning an ultrasonic microphone as well as finite element analysis of the horn and its interface with the surrounding air volume. The results of the model are in good agreement with measurements and demonstrate the validity of the approach for both near and far field analyses. Our results show that this style of transducer produces a strong acoustic beam with a total divergence angle of 10°, a near-field point close to the transducer surface and a virtual sound source. These are desirable characteristics for a sound source used for acoustic trapping experiments.

Characterization of the acoustic field generated by a horn shaped ultrasonic transducer

DOE PAGES

Hu, B.; Lerch, J. E.; Chavan, A. H.; ...

2017-09-04

A horn shaped Langevin ultrasonic transducer used in a single axis levitator was characterized to better understand the role of the acoustic profile in establishing stable traps. The method of characterization included acoustic beam profiling performed by raster scanning an ultrasonic microphone as well as finite element analysis of the horn and its interface with the surrounding air volume. The results of the model are in good agreement with measurements and demonstrate the validity of the approach for both near and far field analysis. Our results show that this style of transducer produces a strong acoustic beam with a totalmore » divergence angle of 10 degrees, a nearfield point close to the transducer surface and a virtual sound source. These are desirable characteristics for a sound source used for acoustic trapping experiments.« less

Characterization of the acoustic field generated by a horn shaped ultrasonic transducer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, B.; Lerch, J. E.; Chavan, A. H.

A horn shaped Langevin ultrasonic transducer used in a single axis levitator was characterized to better understand the role of the acoustic profile in establishing stable traps. The method of characterization included acoustic beam profiling performed by raster scanning an ultrasonic microphone as well as finite element analysis of the horn and its interface with the surrounding air volume. The results of the model are in good agreement with measurements and demonstrate the validity of the approach for both near and far field analyses. Our results show that this style of transducer produces a strong acoustic beam with a totalmore » divergence angle of 10 degree, a near-field point close to the transducer surface and a virtual sound source. These are desirable characteristics for a sound source used for acoustic trapping experiments« less

Characterization of the acoustic field generated by a horn shaped ultrasonic transducer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, B.; Lerch, J. E.; Chavan, A. H.

A horn shaped Langevin ultrasonic transducer used in a single axis levitator was characterized to better understand the role of the acoustic profile in establishing stable traps. The method of characterization included acoustic beam profiling performed by raster scanning an ultrasonic microphone as well as finite element analysis of the horn and its interface with the surrounding air volume. The results of the model are in good agreement with measurements and demonstrate the validity of the approach for both near and far field analysis. Our results show that this style of transducer produces a strong acoustic beam with a totalmore » divergence angle of 10 degrees, a nearfield point close to the transducer surface and a virtual sound source. These are desirable characteristics for a sound source used for acoustic trapping experiments.« less

Technologies for Trapped-Ion Quantum Information Systems

DTIC Science & Technology

2016-03-21

mate- rials such as graphene and indium tin oxide, integrating devices like optical fibers and mirrors, and exploring alternative ion loading and...trapping techniques. Keywords ion traps · quantum computation · quantum information · trapped ions · ion-photon interface · graphene · indium tin oxide...displays are typically made of indium tin oxide (ITO), a material that is both an elec- trical and an optical conductor. However, using ITO electrodes

Controlling particle trajectories using oscillating microbubbles

NASA Astrophysics Data System (ADS)

Jalikop, Shreyas; Wang, Cheng; Hilgenfeldt, Sascha

2010-11-01

In many applications of microfluidics and biotechnology, such as cytometry and drug delivery, it is vital to manipulate the trajectories of microparticles such as vesicles or cells. On this small scale, inertial or gravitational effects are often too weak to exploit. We propose a mechanism to selectively trap and direct particles based on their size in creeping transport flows (Re1). We employ Rayleigh-Nyborg-Westervelt (RNW) streaming generated by an oscillating microbubble, which in turn generates a streaming flow component around the mobile particles. The result is an attractive interaction that draws the particle closer to the bubble. The impenetrability of the bubble interface destroys time-reversal symmetry and forces the particles onto either narrow trajectory bundles or well-defined closed trajectories, where they are trapped. The effect is dependent on particle size and thus allows for the passive focusing and sorting of selected sizes, on scales much smaller than the geometry of the microfluidic device. The device could eliminate the need for complicated microchannel designs with external magnetic or electric fields in applications such as particle focusing and size-based sorting.

Kelvin probe microscopic visualization of charge storage at polystyrene interfaces with pentacene and gold

NASA Astrophysics Data System (ADS)

Dawidczyk, T. J.; Johns, G. L.; Ozgun, R.; Alley, O.; Andreou, A. G.; Markovic, N.; Katz, H. E.

2012-02-01

Charge carriers trapped in polystyrene (PS) were investigated with Kelvin probe microscopy (KPM) and thermally stimulated discharge current (TSDC). Lateral heterojunctions of pentacene/PS were scanned using KPM, effectively observing polarization along a side view of a lateral nonvolatile organic field-effect transistor dielectric interface. TSDC was used to observe charge migration out of PS films and to estimate the trap energy level inside the PS, using the initial rise method.

Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements.

PubMed

Kim, Seongmin; Kim, Hwansoo; Janes, David B; Ju, Sanghyun

2013-08-02

Due to the large surface-to-volume ratio of nanowires, the quality of nanowire-insulator interfaces as well as the nanowire surface characteristics significantly influence the electrical characteristics of nanowire transistors (NWTs). To improve the electrical characteristics by doping or post-processing, it is important to evaluate the interface characteristics and stability of NWTs. In this study, we have synthesized ZnSnO (ZTO) nanowires using the chemical vapor deposition method, characterized the composition of ZTO nanowires using x-ray photoelectron spectroscopy, and fabricated ZTO NWTs. We have characterized the current-voltage characteristics and low-frequency noise of ZTO NWTs in order to investigate the effects of interface states on subthreshold slope (SS) and the noise before and after N2 plasma treatments. The as-fabricated device exhibited a SS of 0.29 V/dec and Hooge parameter of ~1.20 × 10(-2). Upon N2 plasma treatment with N2 gas flow rate of 40 sccm (20 sccm), the SS improved to 0.12 V/dec (0.21 V/dec) and the Hooge parameter decreased to ~4.99 × 10(-3) (8.14 × 10(-3)). The interface trap densities inferred from both SS and low-frequency noise decrease upon plasma treatment, with the highest flow rate yielding the smallest trap density. These results demonstrate that the N2 plasma treatment decreases the interface trap states and defects on ZTO nanowires, thereby enabling the fabrication of high-quality nanowire interfaces.

Analytic model for low-frequency noise in nanorod devices.

PubMed

Lee, Jungil; Yu, Byung Yong; Han, Ilki; Choi, Kyoung Jin; Ghibaudo, Gerard

2008-10-01

In this work analytic model for generation of excess low-frequency noise in nanorod devices such as field-effect transistors are developed. In back-gate field-effect transistors where most of the surface area of the nanorod is exposed to the ambient, the surface states could be the major noise source via random walk of electrons for the low-frequency or 1/f noise. In dual gate transistors, the interface states and oxide traps can compete with each other as the main noise source via random walk and tunneling, respectively.

Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes.

PubMed

Bessire, Cedric D; Björk, Mikael T; Schmid, Heinz; Schenk, Andreas; Reuter, Kathleen B; Riel, Heike

2011-10-12

We report on the electrical characterization of one-sided p(+)-si/n-InAs nanowire heterojunction tunnel diodes to provide insight into the tunnel process occurring in this highly lattice mismatched material system. The lattice mismatch gives rise to dislocations at the interface as confirmed by electron microscopy. Despite this, a negative differential resistance with peak-to-valley current ratios of up to 2.4 at room temperature and with large current densities is observed, attesting to the very abrupt and high-quality interface. The presence of dislocations and other defects that increase the excess current is evident in the first and second derivative of the I-V characteristics as distinct peaks arising from trap-and phonon-assisted tunneling via the corresponding defect levels. We observe this assisted tunneling mainly in the forward direction and at low reverse bias but not at higher reverse biases because the band-to-band generation rates are peaked in the InAs, which is also confirmed by modeling. This indicates that most of the peaks are due to dislocations and defects in the immediate vicinity of the interface. Finally, we also demonstrate that these devices are very sensitive to electrical stress, in particular at room temperature, because of the extremely high electrical fields obtained at the abrupt junction even at low bias. The electrical stress induces additional defect levels in the band gap, which reduce the peak-to-valley current ratios.

Microorganism Nutrition Processes as a General Route for the Preparation of Bionic Nanocomposites Based on Intractable Polymers.

PubMed

Valentini, L; Bon, S Bittolo; Pugno, N M

2016-08-31

In this paper the fermentation process activated by living microorganisms of the baker's yeast is proposed as a facile assembly method of hybrid nanoparticles at liquid interface. Water dispersion of commercial baker's yeast extract used for bread production, graphene nanoplatelets (GNPs), and carbon nanotubes (CNTs) were added to oil/water interface; when the yeast is activated by adding sugar, the byproduct carbon dioxide bubbles migrate from the water phase to the oil/water interface generating a floating nanostructured film at liquid interface where it is trapped. Starting from this simple method, we propose a general approach for the stabilization of intractable poly(etheretherketone) polymeric particles with GNPs and CNTs at immiscible liquid interface. This process allowed the formation of sintered porous composites with improved mechanical properties. The porous structure of the composites gave rise to a low thermal conductivity making them good candidates for thermal insulating applications. Liquid absorption by these porous composites has been also reported. We believe that this new approach may have applications in the large scale fabrication of nanomaterials and is particularly suited for the preparation of nanocomposites starting from polymers that are intractable by solvent casting.

Identification of microscopic hole-trapping mechanisms in nitride semiconductors

DOE PAGES

John L. Lyons; Krishnaswamy, Karthik; Luke Gordon; ...

2015-12-17

Hole trapping has been observed in nitride heterostructure devices, where the Fermi level is in the vicinity of the valence-band maximum. Using hybrid density functional calculations, we examine microscopic mechanisms for hole trapping in GaN and AlN. In a defect-free material, hole trapping does not spontaneously occur, but trapping can occur in the vicinity of impurities, such as C-a common unintentional impurity in nitrides. As a result, using Schrodinger-Poisson simulations, we assess the effects of C-derived hole traps on N-face high-electron mobility transistors, which we find to be more detrimental than the previously proposed interface traps.

Model for thickness dependence of radiation charging in MOS structures

NASA Technical Reports Server (NTRS)

Viswanathan, C. R.; Maserjian, J.

1976-01-01

The model considers charge buildup in MOS structures due to hole trapping in the oxide and the creation of sheet charge at the silicon interface. The contribution of hole trapping causes the flatband voltage to increase with thickness in a manner in which square and cube dependences are limiting cases. Experimental measurements on samples covering a 200 - 1000 A range of oxide thickness are consistent with the model, using independently obtained values of hole-trapping parameters. An important finding of our experimental results is that a negative interface charge contribution due to surface states created during irradiation compensates most of the positive charge in the oxide at flatband. The tendency of the surface states to 'track' the positive charge buildup in the oxide, for all thicknesses, applies both in creation during irradiation and in annihilation during annealing. An explanation is proposed based on the common defect origin of hole traps and potential surface states.

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

NASA Technical Reports Server (NTRS)

Hoenk, M. E.; Carver, A.; Jones, T.; Dickie, M.; Cheng, P.; Greer, H. F.; Nikzad, S.; Sgro, J.

2013-01-01

In this paper, we present experimental results and band structure calculations that illuminate the unique properties of superlattice-doped detectors. Numerical band structure calculations are presented to analyze the dependencies of surface passivation on dopant profiles and interface trap densities (Figure 3). Experiments and calculations show that quantum-engineered surfaces, grown at JPL by low temperature molecular beam epitaxy, achieve a qualitative as well as quantitative uniqueness in their near-immunity to high densities of surface and interface traps.

Acoustic trapping in bubble-bounded micro-cavities

NASA Astrophysics Data System (ADS)

O'Mahoney, P.; McDougall, C.; Glynne-Jones, P.; MacDonald, M. P.

2016-12-01

We present a method for controllably producing longitudinal acoustic trapping sites inside microfluidic channels. Air bubbles are injected into a micro-capillary to create bubble-bounded `micro-cavities'. A cavity mode is formed that shows controlled longitudinal acoustic trapping between the two air/water interfaces along with the levitation to the centre of the channel that one would expect from a lower order lateral mode. 7 μm and 10 μm microspheres are trapped at the discrete acoustic trapping sites in these micro-cavities.We show this for several lengths of micro-cavity.

Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

NASA Astrophysics Data System (ADS)

Hamzah, Afiq; Hamid, Fatimah A.; Ismail, Razali

2016-12-01

An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. The solution is based on the core SRGMOSFETs model of the Unified Charge Control Model (UCCM) for heavily doped conditions. The UCCM model of highly doped SRGMOSFETs is derived to obtain the exact equivalent expression as in the undoped case. Taking advantage of the undoped explicit charge-based expression, the asymptotic limits for below threshold and above threshold have been redefined to include the effect of trap states for heavily doped cases. After solving the asymptotic limits, an explicit mobile charge expression is obtained which includes the trap state effects. The explicit mobile charge model shows very good agreement with respect to numerical simulation over practical terminal voltages, doping concentration, geometry effects, and trap state effects due to the fixed oxide charges and interface traps. Then, the drain current is obtained using the Pao-Sah's dual integral, which is expressed as a function of inversion charge densities at the source/drain ends. The drain current agreed well with the implicit solution and numerical simulation for all regions of operation without employing any empirical parameters. A comparison with previous explicit models has been conducted to verify the competency of the proposed model with the doping concentration of 1× {10}19 {{cm}}-3, as the proposed model has better advantages in terms of its simplicity and accuracy at a higher doping concentration.

Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics

NASA Astrophysics Data System (ADS)

Basile, A. F.; Cramer, T.; Kyndiah, A.; Biscarini, F.; Fraboni, B.

2014-06-01

Metal-oxide-semiconductor (MOS) transistors fabricated with pentacene thin films were characterized by temperature-dependent current-voltage (I-V) characteristics, time-dependent current measurements, and admittance spectroscopy. The channel mobility shows almost linear variation with temperature, suggesting that only shallow traps are present in the semiconductor and at the oxide/semiconductor interface. The admittance spectra feature a broad peak, which can be modeled as the sum of a continuous distribution of relaxation times. The activation energy of this peak is comparable to the polaron binding energy in pentacene. The absence of trap signals in the admittance spectra confirmed that both the semiconductor and the oxide/semiconductor interface have negligible density of deep traps, likely owing to the passivation of SiO2 before pentacene growth. Nevertheless, current instabilities were observed in time-dependent current measurements following the application of gate-voltage pulses. The corresponding activation energy matches the energy of a hole trap in SiO2. We show that hole trapping in the oxide can explain both the temperature and the time dependences of the current instabilities observed in pentacene MOS transistors. The combination of these experimental techniques allows us to derive a comprehensive model for charge transport in hybrid architectures where trapping processes occur at various time and length scales.

Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2017-04-01

The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

A dynamic Monte Carlo study of anomalous current voltage behaviour in organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feron, K., E-mail: Krishna.Feron@csiro.au; Fell, C. J.; CSIRO Energy Flagship, Newcastle, NSW 2300

2014-12-07

We present a dynamic Monte Carlo (DMC) study of s-shaped current-voltage (I-V) behaviour in organic solar cells. This anomalous behaviour causes a substantial decrease in fill factor and thus power conversion efficiency. We show that this s-shaped behaviour is induced by charge traps that are located at the electrode interface rather than in the bulk of the active layer, and that the anomaly becomes more pronounced with increasing trap depth or density. Furthermore, the s-shape anomaly is correlated with interface recombination, but not bulk recombination, thus highlighting the importance of controlling the electrode interface. While thermal annealing is known tomore » remove the s-shape anomaly, the reason has been not clear, since these treatments induce multiple simultaneous changes to the organic solar cell structure. The DMC modelling indicates that it is the removal of aluminium clusters at the electrode, which act as charge traps, that removes the anomalous I-V behaviour. Finally, this work shows that the s-shape becomes less pronounced with increasing electron-hole recombination rate; suggesting that efficient organic photovoltaic material systems are more susceptible to these electrode interface effects.« less

Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung

2013-09-01

This work investigates the channel hot carrier (CHC) effect in HfO2/Ti1-xNx p-channel metal oxide semiconductor field effect transistors (p-MOSFETs). Generally, the subthreshold swing (S.S.) should increase during CHC stress (CHCS), since interface states will be generated near the drain side under high electric field due to drain voltage (Vd). However, our experimental data indicate that S.S. has no evident change under CHCS, but threshold voltage (Vth) shifts positively. This result can be attributed to hot carrier injected into high-k dielectric near the drain side. Meanwhile, it is surprising that such Vth degradation is not observed in the saturation region during stress. Therefore, drain-induced-barrier-lowering (DIBL) as a result of CHC-induced electron trapping is proposed to explain the different Vth behaviors in the linear and saturation regions. Additionally, the influence of different nitrogen concentrations in HfO2/Ti1-xNx p-MOSFETs on CHCS is also investigated in this work. Since nitrogen diffuses to SiO2/Si interface induced pre-Nit occurring to degrades channel mobility during the annealing process, a device with more nitrogen shows slightly less impact ionization, leading to insignificant charge trapping-induced DIBL behavior.

Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs

NASA Astrophysics Data System (ADS)

Lechaux, Y.; Fadjie, A.; Bollaert, S.; Talbo, V.; Mateos, J.; González, T.; Vasallo, B. G.; Wichmann, N.

2015-10-01

In this work, Metal - Oxide - Semiconductor Capacitors (MOSCaps) based on Al2O3/ n-Ga0.47In0.53As interface have been studied. In order to have high MOSFETs performance, it is necessary to improve the semiconductor - oxide interface quality. It is observed that the (NH4)2S passivation shows lower interface trap density in the order of 6×1011cm-2.eV-1. Also, it is observed that O2 plasma densification after a passivation in a NH4OH solution improves the electrical behaviour of the charge control. Low interface trap density in the order of 1×1012cm-2.eV-1 was obtained for different treatments presented in this work.

Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET

NASA Astrophysics Data System (ADS)

Kang, Soo Cheol; Lim, Donghwan; Lim, Sung Kwan; Noh, Jinwoo; Kim, Seung-Mo; Lee, Sang Kyung; Choi, Changhwan; Lee, Byoung Hun

2018-04-01

This study investigated the unique reliability characteristics of tunneling field effect transistors (TFETs) by comparing the effects of positive bias temperature instability (PBTI) and hot carrier injection (HCI) stresses. In case of hot carrier injection (HCI) stress, the interface trap generation near a p/n+ region was the primary degradation mechanism. However, strong recovery after a high-pressure hydrogen annealing and weak degradation at low temperature indicates that the degradation mechanism of TFET under the HCI stress is different from the high-energy carrier stress induced permanent defect generation mechanism observed in MOSFETs. Further study is necessary to identify the exact location and defect species causing TFET degradation; however, a significant difference is evident between the dominant reliability mechanism of TFET and MOSFET.

Manipulation of micro-objects using acoustically oscillating bubbles based on the gas permeability of PDMS.

PubMed

Liu, Bendong; Tian, Baohua; Yang, Xu; Li, Mohan; Yang, Jiahui; Li, Desheng; Oh, Kwang W

2018-05-01

This paper presents a novel manipulation method for micro-objects using acoustically oscillating bubbles with a controllable position based on the gas permeability of polydimethylsiloxane. The oscillating bubble trapped within the side channel attracts the neighboring micro-objects, and the position of the air-liquid interface is controlled by generating temporary pressure difference between the side channel and the air channel. To demonstrate the feasibility of the method in technological applications, polystyrene microparticles of 10  μ m in diameter were successfully captured, transported, and released. The influence of pressure difference on the movement speed of the air-liquid interface was demonstrated in our experiments, and the manipulation performance was also characterized by varying the frequency of the acoustic excitation and the pressure difference. Since the bubble generation and the air-liquid interface movement in our manipulation method do not need any electrochemical reaction and any high temperature, this on-chip manipulation method provides a controllable, efficient, and noninvasive tool for handling micro-objects such as particles, cells, and other entities. The whole manipulation process, including capturing, transporting, and releasing of particles, spent less than 1 min. It can be used to select the cells and particles in the microfluidic device or change the cell culture medium.

Time-resolved electric force microscopy of charge traps in polycrystalline pentacene films

NASA Astrophysics Data System (ADS)

Jaquith, Michael; Muller, Erik; Marohn, John

2006-03-01

The microscopic mechanisms by which charges trap in organic electronic materials are poorly understood. Muller and Marohn recently showed that electric force microscopy (EFM) can be used to image trapped charge in working pentacene thin-film transistors [E. M. Muller et al, Adv. Mater. 17 1410 (2005)]. We have extended their work by imaging trapped charge in pentacene films with much larger grains. In contrast to the previous study in which charge was found to trap inhomogeneously throughout the transistor gap, we find microscopic evidence for a new trapping mechanism in which charges trap predominantly at the pentacene/metal interface in large-grained devices. We have also made localized measurements of the trap growth over time by performing pulsed-gate EFM experiments. Integrated-rate kinetics data supports a charge trap mechanism which is second order in holes, e.g., holes trap in pairs, although the charge-trapping rate appears to depend on gate voltage.

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

NASA Astrophysics Data System (ADS)

Khosa, R. Y.; Thorsteinsson, E. B.; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, E. Ö.

2018-02-01

We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

A Biopolymer Heparin Sodium Interlayer Anchoring TiO2 and MAPbI3 Enhances Trap Passivation and Device Stability in Perovskite Solar Cells.

PubMed

You, Shuai; Wang, Hui; Bi, Shiqing; Zhou, Jiyu; Qin, Liang; Qiu, Xiaohui; Zhao, Zhiqiang; Xu, Yun; Zhang, Yuan; Shi, Xinghua; Zhou, Huiqiong; Tang, Zhiyong

2018-04-18

Traps in the photoactive layer or interface can critically influence photovoltaic device characteristics and stabilities. Here, traps passivation and retardation on device degradation for methylammonium lead trihalide (MAPbI 3 ) perovskite solar cells enabled by a biopolymer heparin sodium (HS) interfacial layer is investigated. The incorporated HS boosts the power conversion efficiency from 17.2 to 20.1% with suppressed hysteresis and Shockley-Read-Hall recombination, which originates primarily from the passivation of traps near the interface between the perovskites and the TiO 2 cathode. The incorporation of an HS interfacial layer also leads to a considerable retardation of device degradation, by which 85% of the initial performance is maintained after 70 d storage in ambient environment. Aided by density functional theory calculations, it is found that the passivation of MAPbI 3 and TiO 2 surfaces by HS occurs through the interactions of the functional groups (COO - , SO 3 - , or Na + ) in HS with undersaturated Pb and I ions in MAPbI 3 and Ti 4+ in TiO 2 . This work demonstrates a highly viable and facile interface strategy using biomaterials to afford high-performance and stable perovskite solar cells. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

GaAs-oxide interface states - Gigantic photoionization via Auger-like process

NASA Technical Reports Server (NTRS)

Lagowski, J.; Kazior, T. E.; Gatos, H. C.; Walukiewicz, W.; Siejka, J.

1981-01-01

Spectral and transient responses of photostimulated current in MOS structures were employed for the study of GaAs-anodic oxide interface states. Discrete deep traps at 0.7 and 0.85 eV below the conduction band were found with concentrations of 5 x 10 to the 12th/sq cm and 7 x 10 to the 11th/sq cm, respectively. These traps coincide with interface states induced on clean GaAs surfaces by oxygen and/or metal adatoms (submonolayer coverage). In contrast to surfaces with low oxygen coverage, the GaAs-thick oxide interfaces exhibited a high density (about 10 to the 14th/sq cm) of shallow donors and acceptors. Photoexcitation of these donor-acceptor pairs led to a gigantic photoionization of deep interface states with rates 1000 times greater than direct transitions into the conduction band. The gigantic photoionization is explained on the basis of energy transfer from excited donor-acceptor pairs to deep states.

Interface traps and quantum size effects on the retention time in nanoscale memory devices

PubMed Central

2013-01-01

Based on the analysis of Poisson equation, an analytical surface potential model including interface charge density for nanocrystalline (NC) germanium (Ge) memory devices with p-type silicon substrate has been proposed. Thus, the effects of Pb defects at Si(110)/SiO2, Si(111)/SiO2, and Si(100)/SiO2 interfaces on the retention time have been calculated after quantum size effects have been considered. The results show that the interface trap density has a large effect on the electric field across the tunneling oxide layer and leakage current. This letter demonstrates that the retention time firstly increases with the decrease in diameter of NC Ge and then rapidly decreases with the diameter when it is a few nanometers. This implies that the interface defects, its energy distribution, and the NC size should be seriously considered in the aim to improve the retention time from different technological processes. The experimental data reported in the literature support the theoretical expectation. PMID:23984827

Formation of He-Rich Layers Observed by Neutron Reflectometry in the He-Ion-Irradiated Cr/W Multilayers: Effects of Cr/W Interfaces on the He-Trapping Behavior.

PubMed

Chen, Feida; Tang, Xiaobin; Huang, Hai; Li, Xinxi; Wang, Yan; Huang, Chaoqiang; Liu, Jian; Li, Huan; Chen, Da

2016-09-21

Cr/W multilayer nanocomposites were presented in the paper as potential candidate materials for the plasma facing components in fusion reactors. We used neutron reflectometry to measure the depth profile of helium in the multienergy He ions irradiated [Cr/W (50 nm)]3 multilayers. Results showed that He-rich layers with low neutron scattering potential energy form at the Cr/W interfaces, which is in great agreement with previous modeling results of other multilayers. This phenomenon provided a strong evidence for the He trapping effects of Cr/W interfaces and implied the possibility of using the Cr/W multilayer nanocomposites as great He-tolerant plasma facing materials.

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Liu, L.; Xu, J. P.; Ji, F.; Chen, J. X.; Lai, P. T.

2012-07-01

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH3-annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO2 interface.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peer, Akshit; Biswas, Rana; Park, Joong -Mok

Here, we demonstrate enhanced absorption in solar cells and enhanced light emission in OLEDs by light interaction with a periodically structured microlens array. We simulate n-i-p perovskite solar cells with a microlens at the air-glass interface, with rigorous scattering matrix simulations. The microlens focuses light in nanoscale regions within the absorber layer enhancing the solar cell. Optimal period of ~700 nm and microlens height of ~800-1000 nm, provides absorption (photocurrent) enhancement of 6% (6.3%). An external polymer microlens array on the air-glass side of the OLED generates experimental and theoretical enhancements >100%, by outcoupling trapped modes in the glass substrate.

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

PubMed

Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

2016-02-10

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites.

PubMed

Ji, Hyunjin; Joo, Min-Kyu; Yi, Hojoon; Choi, Homin; Gul, Hamza Zad; Ghimire, Mohan Kumar; Lim, Seong Chu

2017-08-30

There is a general consensus that the carrier mobility in a field-effect transistor (FET) made of semiconducting transition-metal dichalcogenides (s-TMDs) is severely degraded by the trapping/detrapping and Coulomb scattering of carriers by ionic charges in the gate oxides. Using a double-gated (DG) MoTe 2 FET, we modulated and enhanced the carrier mobility by adjusting the top- and bottom-gate biases. The relevant mechanism for mobility tuning in this device was explored using static DC and low-frequency (LF) noise characterizations. In the investigations, LF-noise analysis revealed that for a strong back-gate bias the Coulomb scattering of carriers by ionized traps in the gate dielectrics is strongly screened by accumulation charges. This significantly reduces the electrostatic scattering of channel carriers by the interface trap sites, resulting in increased mobility. The reduction of the number of effective trap sites also depends on the gate bias, implying that owing to the gate bias, the carriers are shifted inside the channel. Thus, the number of active trap sites decreases as the carriers are repelled from the interface by the gate bias. The gate-controlled Coulomb-scattering parameter and the trap-site density provide new handles for improving the carrier mobility in TMDs, in a fundamentally different way from dielectric screening observed in previous studies.

Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET

NASA Astrophysics Data System (ADS)

Yin, Ruiyuan; Li, Yue; Sun, Yu; Wen, Cheng P.; Hao, Yilong; Wang, Maojun

2018-06-01

We report the effect of the gate recess process and the surface of as-etched GaN on the gate oxide quality and first reveal the correlation between border traps and exposed surface properties in normally-off Al2O3/GaN MOSFET. The inductively coupled plasma (ICP) dry etching gate recess with large damage presents a rough and active surface that is prone to form detrimental GaxO validated by atomic force microscopy and X-ray photoelectron spectroscopy. Lower drain current noise spectral density of the 1/f form and less dispersive ac transconductance are observed in GaN MOSFETs fabricated with oxygen assisted wet etching compared with devices based on ICP dry etching. One decade lower density of border traps is extracted in devices with wet etching according to the carrier number fluctuation model, which is consistent with the result from the ac transconductance method. Both methods show that the density of border traps is skewed towards the interface, indicating that GaxO is of higher trap density than the bulk gate oxide. GaxO located close to the interface is the major location of border traps. The damage-free oxidation assisted wet etching gate recess technique presents a relatively smooth and stable surface, resulting in lower border trap density, which would lead to better MOS channel quality and improved device reliability.

Universal collisional activation ion trap mass spectrometry

DOEpatents

McLuckey, S.A.; Goeringer, D.E.; Glish, G.L.

1993-04-27

A universal collisional activation ion trap comprises an ion trapping means containing a bath gas and having connected thereto a noise signal generator. A method of operating a universal collisional activation ion trap comprises the steps of: providing an ion trapping means; introducing into the ion trapping means a bath gas; and, generating a noise signal within the ion trapping means; introducing into the ion trapping means a substance that, when acted upon by the noise signal, undergoes collisional activation to form product ions.

Universal collisional activation ion trap mass spectrometry

DOEpatents

McLuckey, Scott A.; Goeringer, Douglas E.; Glish, Gary L.

1993-01-01

A universal collisional activation ion trap comprises an ion trapping means containing a bath gas and having connected thereto a noise signal generator. A method of operating a universal collisional activation ion trap comprises the steps of: providing an ion trapping means; introducing into the ion trapping means a bath gas; and, generating a noise signal within the ion trapping means; introducing into the ion trapping means a substance that, when acted upon by the noise signal, undergoes collisional activation to form product ions.

Ice growth from supercooled aqueous solutions of benzene, naphthalene, and phenanthrene.

PubMed

Liyana-Arachchi, Thilanga P; Valsaraj, Kalliat T; Hung, Francisco R

2012-08-23

Classical molecular dynamics (MD) were performed to investigate the growth of ice from supercooled aqueous solutions of benzene, naphthalene, or phenanthrene. The main objective of this study is to explore the fate of those aromatic molecules after freezing of the supercooled aqueous solutions, i.e., if these molecules become trapped inside the ice lattice or if they are displaced to the QLL or to the interface with air. Ice growth from supercooled aqueous solutions of benzene, naphthalene, or phenanthrene result in the formation of quasi-liquid layers (QLLs) at the air/ice interface that are thicker than those observed when pure supercooled water freezes. Naphthalene and phenanthrene molecules in the supercooled aqueous solutions are displaced to the air/ice interface during the freezing process at both 270 and 260 K; no incorporation of these aromatics into the ice lattice is observed throughout the freezing process. Similar trends were observed during freezing of supercooled aqueous solutions of benzene at 270 K. In contrast, a fraction of the benzene molecules become trapped inside the ice lattice during the freezing process at 260 K, with the rest of the benzene molecules being displaced to the air/ice interface. These results suggest that the size of the aromatic molecule in the supercooled aqueous solution is an important parameter in determining whether these molecules become trapped inside the ice crystals. Finally, we also report potential of mean force (PMF) calculations aimed at studying the adsorption of gas-phase benzene and phenanthrene on atmospheric air/ice interfaces. Our PMF calculations indicate the presence of deep free energy minima for both benzene and phenanthrene at the air/ice interface, with these molecules adopting a flat orientation at the air/ice interface.

Slow positrons in single-crystal samples of Al and Al-AlxOy

NASA Astrophysics Data System (ADS)

Lynn, K. G.; Lutz, H.

1980-11-01

Well-characterized Al(111) and Al(100) samples were studied with monoenergetic positrons before and after exposure to oxygen. Both positronium-formation and positron-emission curves were obtained for various incident positron energies at sample temperatures ranging from 160-900 K. The orthopositronium decay signal provides a unique signature that the positron has emerged from the surface region of a clean metal. In the clean Al crystals part of the positronium formed near the surface is found to be associated with a temperature-activated process described as the thermally activated detrapping of a positron from a surface state. A simple positron diffusion model, including surface and vacancy trapping, is fitted to the positronium data and an estimate of the binding energy of the positron in this trap is made. The positron diffusion constant is found to have a negative temperature dependence before the onset of positron trapping at thermally generated monovacancies (>500 K), in reasonable agreement with theoretical predictions. The depth of the positron surface state is reduced or positronium is formed in the chemisorbed layer as oxygen is adsorbed on both Al sample surfaces, thus increasing the positronium fraction and decreasing the positron emission. At higher oxygen exposures [>500 L (1 L = 10-6 torr sec)] positron or positronium traps are generated in the overlayer and the positronium fraction is reduced. The amorphous-to-crystalline surface transition of AlxOy on Al is observed between 650 and 800 K by the change in the positronium fraction and is interpreted as the removal of trapping centers in the metal-oxide overlayer. At the higher temperatures and incident energies vacancy trapping is observed by the decrease in the positron diffusion length in both the clean and the underlying Al of the oxygen-exposed samples. Similar vacancy formation enthalpies for Al are extracted in both the clean and oxygen-covered samples by a simple model and are in good agreement with those measured by other experimental methods. This technique provides a new experimental means for the study of interfaces and thin films and the vacancy-type defects associated with them.

Effectively infinite optical path-length created using a simple cubic photonic crystal for extreme light trapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frey, Brian J.; Kuang, Ping; Hsieh, Mei-Li

A 900 nm thick TiO 2 simple cubic photonic crystal with lattice constant 450 nm was fabricated and used to experimentally validate a newly-discovered mechanism for extreme light-bending. Absorption enhancement was observed extending 1–2 orders of magnitude over that of a reference TiO 2 film. Several enhancement peaks in the region from 600–950 nm were identified, which far exceed both the ergodic fundamental limit and the limit based on surface-gratings, with some peaks exceeding 100 times enhancement. These results are attributed to radically sharp refraction where the optical path length approaches infinity due to the Poynting vector lying nearly parallelmore » to the photonic crystal interface. The observed phenomena follow directly from the simple cubic symmetry of the photonic crystal, and can be achieved by integrating the light-trapping architecture into the absorbing volume. These results are not dependent on the material used, and can be applied to any future light trapping applications such as phosphor-converted white light generation, water-splitting, or thin-film solar cells, where increased response in areas of weak absorption is desired.« less

Effectively infinite optical path-length created using a simple cubic photonic crystal for extreme light trapping

DOE PAGES

Frey, Brian J.; Kuang, Ping; Hsieh, Mei-Li; ...

2017-06-23

A 900 nm thick TiO 2 simple cubic photonic crystal with lattice constant 450 nm was fabricated and used to experimentally validate a newly-discovered mechanism for extreme light-bending. Absorption enhancement was observed extending 1–2 orders of magnitude over that of a reference TiO 2 film. Several enhancement peaks in the region from 600–950 nm were identified, which far exceed both the ergodic fundamental limit and the limit based on surface-gratings, with some peaks exceeding 100 times enhancement. These results are attributed to radically sharp refraction where the optical path length approaches infinity due to the Poynting vector lying nearly parallelmore » to the photonic crystal interface. The observed phenomena follow directly from the simple cubic symmetry of the photonic crystal, and can be achieved by integrating the light-trapping architecture into the absorbing volume. These results are not dependent on the material used, and can be applied to any future light trapping applications such as phosphor-converted white light generation, water-splitting, or thin-film solar cells, where increased response in areas of weak absorption is desired.« less

C70/C70:pentacene/pentacene organic heterojunction as the connecting layer for high performance tandem organic light-emitting diodes: Mechanism investigation of electron injection and transport

NASA Astrophysics Data System (ADS)

Guo, Qingxun; Yang, Dezhi; Chen, Jiangshan; Qiao, Xianfeng; Ahamad, Tansir; Alshehri, Saad M.; Ma, Dongge

2017-03-01

A high performance tandem organic light-emitting diode (OLED) is realized by employing a C70/C70:pentacene/pentacene organic heterojunction as the efficient charge generation layer (CGL). Not only more than two time enhancement of external quantum efficiency but also significant improvement in both power efficiency and lifetime are well achieved. The mechanism investigations find that the electron injection from the CGL to the adjacent electron transport layer (ETL) in tandem devices is injection rate-limited due to the high interface energy barrier between the CGL and the ETL. By the capacitance-frequency (C-F) and low temperature current density-voltage (J-V) characteristic analysis, we confirm that the electron transport is a space-charge-limited current process with exponential trap distribution. These traps are localized states below the lowest unoccupied molecular orbital edge inside the gap and would be filled with the upward shift of the Fermi level during the n-doping process. Furthermore, both the trap density (Ht) and the activation energy (Ea) could be carefully worked out through low temperature J-V measurements, which is very important for developing high performance tandem OLEDs.

Observation of Diamond Nitrogen-Vacancy Center Photoluminescence under High Vacuum in a Magneto-Gravitational Trap

NASA Astrophysics Data System (ADS)

Ji, Peng; Hsu, Jen-Feng; Lewandowski, Charles W.; Dutt, M. V. Gurudev; D'Urso, Brian

2016-05-01

We report the observation of photoluminescence from nitrogen-vacancy (NV) centers in diamond nanocrystals levitated in a magneto-gravitational trap. The trap utilizes a combination of strong magnetic field gradients and gravity to confine diamagnetic particles in three dimensions. The well-characterized NV centers in trapped diamond nanocrystals provide an ideal built-in sensor to measure the trap magnetic field and the temperature of the trapped diamond nanocrystal. In the future, the NV center spin state could be coupled to the mechanical motion through magnetic field gradients, enabling in an ideal quantum interface between NV center spin and the mechanical motion. National Science Foundation, Grant No. 1540879.

Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

NASA Astrophysics Data System (ADS)

Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

2017-12-01

III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

Interfacial Charge-Carrier Trapping in CH3NH3PbI3-Based Heterolayered Structures Revealed by Time-Resolved Photoluminescence Spectroscopy.

PubMed

Yamada, Yasuhiro; Yamada, Takumi; Shimazaki, Ai; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

2016-06-02

The fast-decaying component of photoluminescence (PL) under very weak pulse photoexcitation is dominated by the rapid relaxation of the photoexcited carriers into a small number of carrier-trapping defect states. Here, we report the subnanosecond decay of the PL under excitation weaker than 1 nJ/cm(2) both in CH3NH3PbI3-based heterostructures and bare thin films. The trap-site density at the interface was evaluated on the basis of the fluence-dependent PL decay profiles. It was found that high-density defects determining the PL decay dynamics are formed near the interface between CH3NH3PbI3 and the hole-transporting Spiro-OMeTAD but not at the CH3NH3PbI3/TiO2 interface and the interior regions of CH3NH3PbI3 films. This finding can aid the fabrication of high-quality heterointerfaces, which are required improving the photoconversion efficiency of perovskite-based solar cells.

thin film capacitors

NASA Astrophysics Data System (ADS)

Bodeux, Romain; Gervais, Monique; Wolfman, Jérôme; Gervais, François

2014-09-01

CaCu3Ti4O12 (CCTO) thin films were grown by pulsed laser deposition on Pt and La0.9Sr1.1NiO4 (LSNO) bottom electrodes. The electrical characteristics of the CCTO/Pt and CCTO/LSNO Schottky junctions have been analyzed by impedance spectroscopy, capacitance-voltage (C-V) and current-voltage (I-V) measurements as a function of frequency (40 Hz-1 MHz) and temperature (300-475 K). Similar results were obtained for the two Schottky diodes. The conduction mechanism through the Schottky junctions was described using a thermionic emission model and the electrical parameters were determined. The strong deviation from the ideal I-V characteristics and the increase in capacitance at low frequency for -0.5 V bias are in agreement with the presence of traps near the interfaces. Results point toward the important effect of defects generated at the interface by deposition of CCTO.

Multiresidue pesticide analysis in ginseng and spinach by nontargeted and targeted screening procedures.

PubMed

Hayward, Douglas G; Wong, Jon W; Zhang, Kai; Chang, James; Shi, Feng; Banerjee, Kaushik; Yang, Paul

2011-01-01

Five different mass spectrometers interfaced to GC or LC were evaluated for their application to targeted and nontargeted screening of pesticides in two foods, spinach and ginseng. The five MS systems were capillary GC/MS/MS, GC-high resolution time-of-flight (GC/HR-TOF)-MS, TOF-MS interfaced with a comprehensive multidimensional GC (GCxGC/TOF-MS), an MS/MS ion trap hybrid mass (qTrap) system interfaced with an ultra-performance liquid chromatograph (UPLC-qTrap), and UPLC interfaced to an orbital trap high resolution mass spectrometer (UPLC/Orbitrap HR-MS). Each MS system was tested with spinach and ginseng extracts prepared through a modified quick, easy, cheap, effective, rugged, and safe (QuEChERS) procedure. Each matrix was fortified at 10 and 50 ng/g for spinach or 25 and 100 ng/g for ginseng with subsets of 486 pesticides, isomers, and metabolites representing most pesticide classes. HR-TOF-MS was effective in a targeted search for characteristic accurate mass ions and identified 97% of 170 pesticides in ginseng at 25 ng/g. A targeted screen of either ginseng or spinach found 94-95% of pesticides fortified for analysis at 10 ng/g with GC/MS/MS or LC/MS/MS using multiple reaction monitoring (MRM) procedures. Orbitrap-MS successfully found 89% of 177 fortified pesticides in spinach at 25 ng/g using a targeted search of accurate mass pseudomolecular ions in the positive electrospray ionization mode. A comprehensive GCxGC/TOF-MS system provided separation and identification of 342 pesticides and metabolites in a single 32 min acquisition with standards. Only 67 or 81% of the pesticides were identified in ginseng and spinach matrixes at 25 ng/g or 10 ng/g, respectively. MS/MS or qTrap-MS operated in the MRM mode produced the lowest false-negative rates, at 10 ng/g. Improvements to instrumentation, methods, and software are needed for efficient use of nontargeted screens in parallel with triple quadrupole MS.

Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

NASA Astrophysics Data System (ADS)

Palumbo, F.; Pazos, S.; Aguirre, F.; Winter, R.; Krylov, I.; Eizenberg, M.

2017-06-01

The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution. At the present, he is a research staff of the National Council of Science and Technology (CONICET), working in the National Commission of Atomic Energy (CNEA) in Buenos Aires, Argentina, well embedded within international research collaboration. Since 2008, he is Professor at the National Technological University (UTN) in Buenos Aires, Argentina. Dr. Palumbo has received research fellowships from: Marie Curie Fellowship within the 7th European Community Framework Programme, Abdus Salam International Centre for Theoretical Physics (ICTP) Italy, National Council of Science and Technology (CONICET) Argentina, and Consiglio Nazionale delle Ricerche (CNR) Italy. He is also a frequent scientific visitor of academic institutions as IMM-CNR-Italy, Minatec Grenoble-France, the Autonomous University of Barcelona-Spain, and the Israel Institute of Technology-Technion. He has authored and co-authored more than 50 papers in international conferences and journals.

A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors

NASA Astrophysics Data System (ADS)

Hur, Ji-Hyun; Park, Junghak; Jeon, Sanghun

2017-02-01

A model that universally describes the characteristics of photocurrent in molybdenum disulphide (MoS2) thin-film transistor (TFT) photosensors in both ‘light on’ and ‘light off’ conditions is presented for the first time. We considered possible material-property dependent carrier generation and recombination mechanisms in layered MoS2 channels with different numbers of layers. We propose that the recombination rates that are mainly composed of direct band-to-band recombination and interface trap-involved recombination change on changing the light condition and the number of layers. By comparing the experimental results, it is shown that the model performs well in describing the photocurrent behaviors of MoS2 TFT photosensors, including the photocurrent generation under illumination and a hugely long time persistent trend of the photocurrent decay in the dark condition, for a range of MoS2 layer numbers.

Optical trapping assembling of clusters and nanoparticles in solution by CW and femtosecond lasers

NASA Astrophysics Data System (ADS)

Masuhara, Hiroshi; Sugiyama, Teruki; Yuyama, Ken-ichi; Usman, Anwar

2015-02-01

Laser trapping of molecular systems in solution is classified into three cases: JUST TRAPPING, EXTENDED TRAPPING, and NUCLEATION and GROWTH. The nucleation in amino acid solutions depends on where the 1064-nm CW trapping laser is focused, and crystallization and liquid-liquid phase separation are induced by laser trapping at the solution/air surface and the solution/glass interface, respectively. Laser trapping crystallization is achieved even in unsaturated solution, on which unique controls of crystallization are made possible. Crystal size is arbitrarily controlled by tuning laser power for a plate-like anhydrous crystal of l-phenylalanine. The α- or γ-crystal polymorph of glycine is selectively prepared by changing laser power and polarization. Further efficient trapping of nanoparticles and their following ejection induced by femtosecond laser pulses are introduced as unique trapping phenomena and finally future perspective is presented.

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

NASA Astrophysics Data System (ADS)

Spiga, S.; Rao, R.; Lamagna, L.; Wiemer, C.; Congedo, G.; Lamperti, A.; Molle, A.; Fanciulli, M.; Palma, F.; Irrera, F.

2012-07-01

Al-doped ZrO2 (Al-ZrO2) films deposited by atomic layer deposition onto silicon substrates and the interface with the TaN metal gate are investigated. In particular, structural properties of as-grown and annealed films in the 6-26 nm thickness range, as well as leakage and capacitive behavior of metal-oxide-semiconductor stacks are characterized. As-deposited Al-ZrO2 films in the mentioned thickness range are amorphous and crystallize in the ZrO2 cubic phase after thermal treatment at 900 °C. Correspondingly, the dielectric constant (k) value increases from 20 ± 1 to 27 ± 2. The Al-ZrO2 layers exhibit uniform composition through the film thickness and are thermally stable on Si, whereas chemical reactions take place at the TaN/Al-ZrO2 interface. A transient capacitance technique is adopted for monitoring charge trapping and flat band instability at short and long time scales. The role of traps nearby the TaN/Al-ZrO2 interface is discussed and compared with other metal/high-k oxide films. Further, analytical modeling of the flat band voltage shift with a power-law dependence on time allows extracting features of bulk traps close to the silicon/oxide interface, which exhibit energy levels in the 1.4-1.9 eV range above the valence band of the Al-ZrO2.

Effect of antimony on the deep-level traps in GaInNAsSb thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Islam, Muhammad Monirul, E-mail: islam.monir.ke@u.tsukuba.ac.jp; Miyashita, Naoya; Ahsan, Nazmul

2014-09-15

Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41 eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

Role of phase matching in pulsed second-harmonic generation: Walk-off and phase-locked twin pulses in negative-index media

NASA Astrophysics Data System (ADS)

Roppo, Vito; Centini, Marco; Sibilia, Concita; Bertolotti, Mario; de Ceglia, Domenico; Scalora, Michael; Akozbek, Neset; Bloemer, Mark J.; Haus, Joseph W.; Kosareva, Olga G.; Kandidov, Valery P.

2007-09-01

The present investigation is concerned with the study of pulsed second-harmonic generation under conditions of phase and group velocity mismatch, and generally low conversion efficiencies and pump intensities. In positive-index, nonmetallic materials, we generally find qualitative agreement with previous reports regarding the presence of a double-peaked second harmonic signal, which comprises a pulse that walks off and propagates at the nominal group velocity one expects at the second-harmonic frequency, and a second pulse that is “captured” and propagates under the pump pulse. We find that the origin of the double-peaked structure resides in a phase-locking mechanism that characterizes not only second-harmonic generation, but also χ(3) processes and third-harmonic generation. The phase-locking mechanism that we describe occurs for arbitrarily small pump intensities, and so it is not a soliton effect, which usually relies on a threshold mechanism, although multicolor solitons display similar phase locking characteristics. Thus, in second harmonic generation a phase-matched component is always generated, even under conditions of material phase mismatch: This component is anomalous, because the material does not allow energy exchange between the pump and the second-harmonic beam. On the other hand, if the material is phase matched, phase locking and phase matching are indistinguishable, and the conversion process becomes efficient. We also report a similar phase-locking phenomenon in negative index materials. A spectral analysis of the pump and the generated signals reveals that the phase-locking phenomenon causes the forward moving, phase-locked second-harmonic pulse to experience the same negative index as the pump pulse, even though the index of refraction at the second-harmonic frequency is positive. Our analysis further shows that the reflected second-harmonic pulse generated at the interface and the forward-moving, phase-locked pulse appear to be part of the same pulse initially generated at the surface, part of which is immediately back-reflected, while the rest becomes trapped and dragged along by the pump pulse. These pulses thus constitute twin pulses generated at the interface, having the same negative wave vector, but propagating in opposite directions. Almost any break of the longitudinal symmetry, even an exceedingly small χ(2) discontinuity, releases the trapped pulse which then propagates in the backward direction. These dynamics are indicative of very rich and intricate interactions that characterize ultrashort pulse propagation phenomena.

Role of phase matching in pulsed second-harmonic generation: Walk-off and phase-locked twin pulses in negative-index media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roppo, Vito; Centini, Marco; Sibilia, Concita

The present investigation is concerned with the study of pulsed second-harmonic generation under conditions of phase and group velocity mismatch, and generally low conversion efficiencies and pump intensities. In positive-index, nonmetallic materials, we generally find qualitative agreement with previous reports regarding the presence of a double-peaked second harmonic signal, which comprises a pulse that walks off and propagates at the nominal group velocity one expects at the second-harmonic frequency, and a second pulse that is 'captured' and propagates under the pump pulse. We find that the origin of the double-peaked structure resides in a phase-locking mechanism that characterizes not onlymore » second-harmonic generation, but also {chi}{sup (3)} processes and third-harmonic generation. The phase-locking mechanism that we describe occurs for arbitrarily small pump intensities, and so it is not a soliton effect, which usually relies on a threshold mechanism, although multicolor solitons display similar phase locking characteristics. Thus, in second harmonic generation a phase-matched component is always generated, even under conditions of material phase mismatch: This component is anomalous, because the material does not allow energy exchange between the pump and the second-harmonic beam. On the other hand, if the material is phase matched, phase locking and phase matching are indistinguishable, and the conversion process becomes efficient. We also report a similar phase-locking phenomenon in negative index materials. A spectral analysis of the pump and the generated signals reveals that the phase-locking phenomenon causes the forward moving, phase-locked second-harmonic pulse to experience the same negative index as the pump pulse, even though the index of refraction at the second-harmonic frequency is positive. Our analysis further shows that the reflected second-harmonic pulse generated at the interface and the forward-moving, phase-locked pulse appear to be part of the same pulse initially generated at the surface, part of which is immediately back-reflected, while the rest becomes trapped and dragged along by the pump pulse. These pulses thus constitute twin pulses generated at the interface, having the same negative wave vector, but propagating in opposite directions. Almost any break of the longitudinal symmetry, even an exceedingly small {chi}{sup (2)} discontinuity, releases the trapped pulse which then propagates in the backward direction. These dynamics are indicative of very rich and intricate interactions that characterize ultrashort pulse propagation phenomena.« less

Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakraborty, Apurba, E-mail: apurba.chakraborty86@gmail.com; Biswas, Dhrubes; Advanced Technology Development Centre, IIT Kharagpur, Kharagpur 721302

2015-02-23

Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN ismore » to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10{sup 12 }eV{sup −1} cm{sup −2} in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10{sup 10} eV{sup −1} cm{sup −2} and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V.« less

Positron annihilation at the Si/SiO2 interface

NASA Astrophysics Data System (ADS)

Leung, T. C.; Weinberg, Z. A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G. W.; Lynn, K. G.

1992-01-01

Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that Sint depends directly on holes at interface states or traps at the Si/SiO2 interface.

Relationship between effective mobility and border traps associated with charge trapping in In0.7Ga0.3As MOSFETs with various high-κ stacks

NASA Astrophysics Data System (ADS)

Kwon, Hyuk-Min; Kim, Dae-Hyun; Kim, Tae-Woo

2018-03-01

The effective mobility and reliability characteristics of In0.7Ga0.3As quantum-well (QW) MOSFETs with various high-κ gate stacks and HEMTs with a Schottky gate under bias temperature instability (BTI) stress were investigated. The effective mobilities (μeff) of HEMTs, single-layer Al2O3, bilayer Al2O3 (0.6 nm)/HfO2 (2.0 nm), and Al2O3 (0.6 nm)/HfO2 (3.0 nm) were ˜9000, ˜6158, ˜4789, and ˜4447 cm2 V-1 s-1 at N inv = 1.5 × 1012/cm2, respectively. The maximum effective mobility of In0.7Ga0.3As channel MOSFETs was compared with that of In0.7Ga0.3As/In0.48Al0.52As HEMTs, which are interface and border trap-free FETs. The results showed that the effective channel mobility was sensitive to traps in high-κ dielectrics related to interface trap density and border traps in the oxide. The ΔV T degradation of the bilayer Al2O3/HfO2 under BTI stress was greater than that of a single Al2O3 layer because the HfO2 layer had a high density of oxygen vacancies which were related to border traps.

Nanoscale charge transfer and diffusion at the MoS2/SiO2 interface by atomic force microscopy: contact injection versus triboelectrification.

PubMed

Xu, Rui; Ye, Shili; Xu, Kunqi; Lei, Le; Hussain, Sabir; Zheng, Zhiyue; Pang, Fei; Xing, Shuya; Liu, Xinmeng; Ji, Wei; Cheng, Zhihai

2018-08-31

Understanding the process of charge generation, transfer, and diffusion between two-dimensional (2D) materials and their supporting substrates is very important for potential applications of 2D materials. Compared with the systematic studies of triboelectric charging in a bulk sample, a fundamental understanding of the triboelectrification of the 2D material/insulator system is rather limited. Here, the charge transfer and diffusion of both the SiO 2 surface and MoS 2 /SiO 2 interface through contact electrification and frictional electrification are investigated systematically in situ by scanning Kelvin probe microscopy and dual-harmonic electrostatic force microscopy. Different from the simple static charge transfer between SiO 2 and the PtSi alloy atomic force microscope (AFM) tip, the charge transfer between the tip and the MoS 2 /SiO 2 system is complicated. Triboelectric charges, generated by contact or frictional electrification with the AFM tip, are trapped at the MoS 2 /SiO 2 interface and act as floating gates. The local charge discharge processes can be obtained by monitoring the surface potential. The charge decay time (τ) of the MoS 2 /SiO 2 interface is one (or two) orders of magnitude larger than the decay time τ of the SiO 2 surface. This work facilitates an understanding of the triboelectric and de-electrification of the interface between 2D materials and substrates. In addition to the charge transfer and diffusion, we demonstrate the nanopatterns of surface and interfacial charges, which have great potential for the application of self-assembly of charged nanostructures.

Multimodal Kelvin Probe Force Microscopy Investigations of a Photovoltaic WSe2/MoS2 Type-II Interface.

PubMed

Almadori, Yann; Bendiab, Nedjma; Grévin, Benjamin

2018-01-10

Atomically thin transition-metal dichalcogenides (TMDC) have become a new platform for the development of next-generation optoelectronic and light-harvesting devices. Here, we report a Kelvin probe force microscopy (KPFM) investigation carried out on a type-II photovoltaic heterojunction based on WSe 2 monolayer flakes and a bilayer MoS 2 film stacked in vertical configuration on a Si/SiO 2 substrate. Band offset characterized by a significant interfacial dipole is pointed out at the WSe 2 /MoS 2 vertical junction. The photocarrier generation process and phototransport are studied by applying a differential technique allowing to map directly two-dimensional images of the surface photovoltage (SPV) over the vertical heterojunctions (vHJ) and in its immediate vicinity. Differential SPV reveals the impact of chemical defects on the photocarrier generation and that negative charges diffuse in the MoS 2 a few hundreds of nanometers away from the vHJ. The analysis of the SPV data confirms unambiguously that light absorption results in the generation of free charge carriers that do not remain coulomb-bound at the type-II interface. A truly quantitative determination of the electron-hole (e-h) quasi-Fermi levels splitting (i.e., the open-circuit voltage) is achieved by measuring the differential vacuum-level shift over the WSe 2 flakes and the MoS 2 layer. The dependence of the energy-level splitting as a function of the optical power reveals that Shockley-Read-Hall processes significantly contribute to the interlayer recombination dynamics. Finally, a newly developed time-resolved mode of the KPFM is applied to map the SPV decay time constants. The time-resolved SPV images reveal the dynamics of delayed recombination processes originating from photocarriers trapping at the SiO 2 /TMDC interfaces.

Light Manipulation in Organic Photovoltaics

PubMed Central

Ou, Qing‐Dong

2016-01-01

Organic photovoltaics (OPVs) hold great promise for next‐generation photovoltaics in renewable energy because of the potential to realize low‐cost mass production via large‐area roll‐to‐roll printing technologies on flexible substrates. To achieve high‐efficiency OPVs, one key issue is to overcome the insufficient photon absorption in organic photoactive layers, since their low carrier mobility limits the film thickness for minimized charge recombination loss. To solve the inherent trade‐off between photon absorption and charge transport in OPVs, the optical manipulation of light with novel micro/nano‐structures has become an increasingly popular strategy to boost the light harvesting efficiency. In this Review, we make an attempt to capture the recent advances in this area. A survey of light trapping schemes implemented to various functional components and interfaces in OPVs is given and discussed from the viewpoint of plasmonic and photonic resonances, addressing the external antireflection coatings, substrate geometry‐induced trapping, the role of electrode design in optical enhancement, as well as optically modifying charge extraction and photoactive layers. PMID:27840805

Switching Oxide Traps

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.

2003-01-01

We consider radiation-induced charge trapping in SiO2 dielectric layers, primarily from the point of view of CMOS devices. However, SiO2 insulators are used in many other ways, and the same defects occur in other contexts. The key studies, which determined the nature of the oxide charge traps, were done primarily on gate oxides in CMOS devices, because that was the main radiation problem in CMOS at one time. There are two major reviews of radiation-induced oxide charge trapping already in the literature, which discuss the subject in far greater detail than is possible here. The first of these was by McLean et al. in 1989, and the second, ten years later, was intended as an update, because of additional, new work that had been reported. Basically, the picture that has emerged is that ionizing radiation creates electron-hole pairs in the oxide, and the electrons have much higher mobility than the holes. Therefore, the electrons are swept out of the oxide very rapidly by any field that is present, leaving behind any holes that escape the initial recombination process. These holes then undergo a polaron hopping transport toward the Si/SiO2 interface (under positive bias). Near the interface, some fraction of them fall into deep, relatively stable, long-lived hole traps. The nature and annealing behavior of these hole traps is the main focus of this paper.

Light management in perovskite solar cells and organic LEDs with microlens arrays

DOE PAGES

Peer, Akshit; Biswas, Rana; Park, Joong -Mok; ...

2017-04-28

Here, we demonstrate enhanced absorption in solar cells and enhanced light emission in OLEDs by light interaction with a periodically structured microlens array. We simulate n-i-p perovskite solar cells with a microlens at the air-glass interface, with rigorous scattering matrix simulations. The microlens focuses light in nanoscale regions within the absorber layer enhancing the solar cell. Optimal period of ~700 nm and microlens height of ~800-1000 nm, provides absorption (photocurrent) enhancement of 6% (6.3%). An external polymer microlens array on the air-glass side of the OLED generates experimental and theoretical enhancements >100%, by outcoupling trapped modes in the glass substrate.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

NASA Astrophysics Data System (ADS)

Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

2016-08-01

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, L. N.; Choi, H. W.; Lai, P. T., E-mail: laip@eee.hku.hk

2015-11-23

GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorine-plasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer or the fluorine treatment. Experimental results show that the sample exhibits better characteristics: low interface-state density (8 × 10{sup 11 }cm{sup −2}/eV), small flatband voltage (0.69 V), good capacitance-voltage behavior, small frequency dispersion, and small gate leakage current (6.35 × 10{sup −6} A/cm{sup 2} at V{sub fb} + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface during gate-oxide annealing by the LaTaON interlayer and fluorine incorporation, and the passivating effects of fluorine atoms on the acceptor-likemore » interface and near-interface traps.« less

Towards a Quantum Interface between Diamond Spin Qubits and Phonons in an Optical Trap

NASA Astrophysics Data System (ADS)

Ji, Peng; Momeen, M. Ummal; Hsu, Jen-Feng; D'Urso, Brian; Dutt, Gurudev

2014-05-01

We introduce a method to optically levitate a pre-selected nanodiamond crystal in air or vacuum. The nanodiamond containing nitrogen-vacancy (NV) centers is suspended on a monolayer of graphene transferred onto a patterned substrate. Laser light is focused onto the sample, using a home-built confocal microscope with a high numerical aperture (NA = 0.9) objective, simultaneously burning the graphene and creating a 3D optical trap that captures the falling nano-diamond at the beam waist. The trapped diamond is an ultra-high-Q mechanical oscillator, allowing us to engineer strong linear and quadratic coupling between the spin of the NV center and the phonon mode. The system could result in an ideal quantum interface between a spin qubit and vibrational phonon mode, potentially enabling applications in quantum information processing and sensing the development of quantum information storage and processing.

Time Resolved Microscopy of Charge Trapping in Polycrystalline Pentacene

NASA Astrophysics Data System (ADS)

Jaquith, Michael; Muller, Erik; Marohn, John

2007-03-01

The microscopic mechanisms by which charges trap in organic electronic materials are poorly understood. Muller and Marohn recently showed that electric force microscopy (EFM) can be used to image trapped charge in working pentacene thin-film transistors [E. M. Muller et al., Adv. Mater. 17 1410 (2005)]. We have made a new discovery by imaging trapped charge in pentacene films with much larger grains. In contrast to the previous study in which charge was found to trap inhomogeneously throughout the transistor gap, we find microscopic evidence for a new trapping mechanism in which charges trap predominantly at the pentacene/metal interface in large-grained devices. We conclude that at least two charge trapping mechanisms are at play in polycrystalline pentacene. We have made localized measurements of the trap growth over time by performing pulsed-gate EFM experiments. Trap formation is not instantaneous, taking up to a second to complete. Furthermore, the charge-trapping rate depends strongly on gate voltage (or hole concentration). This kinetics data is consistent with the hypothesis that traps form by chemical reaction.

Probing of barrier induced deviations in current-voltage characteristics of polymer devices by impedance spectroscopy

NASA Astrophysics Data System (ADS)

Khan, Motiur Rahman; Rao, K. S. R. Koteswara; Menon, R.

2017-05-01

Temperature dependent current-voltage measurements have been performed on poly(3-methylthiophene) based devices in metal/polymer/metal geometry in temperature range 90-300 K. Space charge limited current (SCLC) controlled by exponentially distributed traps is observed at all the measured temperatures at intermediate voltage range. At higher voltages, trap-free SCLC is observed at 90 K only while slope less than 2 is observed at higher temperatures which is quiet unusual in polymer devices. Impedance measurements were performed at different bias voltages. The unusual behavior observed in current-voltage characteristics is explained by Cole-Cole plot which gives the signature of interface dipole on electrode/polymer interface. Two relaxation mechanisms are obtained from the real part of impedance vs frequency spectra which confirms the interface related phenomena in the device

Frequency dispersion analysis of thin dielectric MOS capacitor in a five-element model

NASA Astrophysics Data System (ADS)

Zhang, Xizhen; Zhang, Sujuan; Zhu, Huichao; Pan, Xiuyu; Cheng, Chuanhui; Yu, Tao; Li, Xiangping; Cheng, Yi; Xing, Guichao; Zhang, Daming; Luo, Xixian; Chen, Baojiu

2018-02-01

An Al/ZrO2/IL/n-Si (IL: interface layer) MOS capacitor has been fabricated by metal organic decomposition of ZrO2 and thermal deposition Al. We have measured parallel capacitance (C m) and parallel resistance (R m) versus bias voltage curves (C m, R m-V) at different AC signal frequency (f), and C m, R m-f curves at different bias voltage. The curves of C m, R m-f measurements show obvious frequency dispersion in the range of 100 kHz-2 MHz. The energy band profile shows that a large voltage is applied on the ZrO2 layer and IL at accumulation, which suggests possible dielectric polarization processes by some traps in ZrO2 and IL. C m, R m-f data are used for frequency dispersion analysis. To exclude external frequency dispersion, we have extracted the parameters of C (real MOS capacitance), R p (parallel resistance), C IL (IL capacitance), R IL (IL resistance) and R s (Si resistance) in a five-element model by using a three-frequency method. We have analyzed intrinsic frequency dispersion of C, R p, C IL, R IL and R s by studying the dielectric characteristics and Si surface layer characteristics. At accumulation, the dispersion of C and R p is attributed to dielectric polarization such as dipolar orientation and oxide traps. The serious dispersion of C IL and R IL are relative to other dielectric polarization, such as border traps and fixed oxide traps. The dispersion of R s is mainly attributed to contact capacitance (C c) and contact resistance (R c). At depletion and inversion, the frequency dispersion of C, R p, C IL, R IL, and R s are mainly attributed to the depletion layer capacitance (C D). The interface trap capacitance (C it) and interface trap resistance (R it) are not dominant for the dispersion of C, R p, C IL, R IL, and R s.

An Overview of Radiation-Induced Interface Traps in MOS (Metal-Oxide Semiconductor) Structures

DTIC Science & Technology

1989-11-01

to be Controlled by hole transport to the Si/S1 02 interface and by neutral hydrogen diffusion, respectively. ’We also discuss several models which...trivalent Si which is undergo a dispersive hopping transport which not mobile and a mobile nonbridging oxygen. controls the rate of interface state... control the buildup of ping event itself seems to be a phonon-assisted radiation-induced interface states are subjects tunneling transition between

Device Modeling and Characterization for CIGS Solar Cells

NASA Astrophysics Data System (ADS)

Song, Sang Ho

We studied the way to achieve high efficiency and low cost of CuIn1-xGaxSe2 (CIGS) solar cells. The Fowler-Nordheim (F-N) tunneling currents at low bias decreased the shunt resistances and degraded the fill factor and efficiency. The activation energies of majority traps were directly related with F-N tunneling currents by the energy barriers. Air anneals decreased the efficiency from 7.74% to 5.18% after a 150 °C, 1000 hour anneal. The decrease of shunt resistance due to F-N tunneling and the increase of series resistance degrade the efficiencies of solar cells. Air anneal reduces the free carrier densities by the newly generated Cu interstitial defects (Cui). Mobile Cui defects induce the metastability in CIGS solar cell. Since oxygen atoms are preferred to passivate the Se vacancies thus Cu interstitial defects explains well metastability of CIGS solar cells. Lattice mismatch and misfit stress between layers in CIGS solar cells can explain the particular effects of CIGS solar cells. The misfits of 35.08° rotated (220/204) CIGS to r-plane (102) MoSe2 layers are 1% ˜ -4% lower than other orientation and the lattice constants of two layers in short direction are matched at Ga composition x=0.35. This explains well the preferred orientation and the maximum efficiency of Ga composition effects. Misfit between CIGS and CdS generated the dislocations in CdS layer as the interface traps. Thermionic emission currents due to interface traps limit the open circuit voltage at high Ga composition. The trap densities were calculated by critical thickness and dislocation spacing and the numerical device simulation results were well matched with the experimental results. A metal oxide broken-gap p-n heterojunction is suggested for tunnel junction for multi-junction polycrystalline solar cells and we examined the characteristics of broken-gap tunnel junction by numerical simulation. Ballistic transport mechanism explains well I-V characteristics of broken-gap junction. P-type Cu2O and n-type In2O3 broken-gap heterojunction is effective with the CIGS tandem solar cells. The junction has linear I-V characteristics with moderate carrier concentration (2x1017 cm-3) and the resistance is lower than GaAs tunnel junction. The efficiency of a CGS/CIS tandem solar cells was 24.1% with buffer layers. And no significant degradations are expected due to broken gap junction.

Observation of the Amorphous-to-Crystalline Surface Transition in Al-AlxOy Using Slow Positrons

NASA Astrophysics Data System (ADS)

Lynn, K. G.

1980-05-01

The amorphous-to-crystalline surface transition of AlxOy on the Al(111) surface is observed between 650 and 800 K with different O2 exposures by measuring the positronium (Ps) fraction produced by e+ impinging on the surface. The data are interpreted in terms of vacancy-type defects in the film or at the metal-metal-oxide interface which as trapping sites for e+ or Ps. As the ordering process proceeds to completion the trapping centers anneal out and the Ps fraction increases, showing an irreversible transition. This technique provides a new experimental method to study interfaces.

Molecular control of pentacene/ZnO photoinduced charge transfer

NASA Astrophysics Data System (ADS)

Spalenka, Josef W.; Paoprasert, Peerasak; Franking, Ryan; Hamers, Robert J.; Gopalan, Padma; Evans, Paul G.

2011-03-01

Photoinduced charge transfer modifies the device properties of illuminated pentacene field effect transistors (FETs) incorporating ZnO quantum dots at the gate insulator/pentacene interface. The transferred charge is trapped on electronic states associated with the ZnO quantum dots, with a steady state population approximately proportional to the rate of organic-inorganic charge transfer. Trapped charge shifts the threshold voltage of the FETs, providing the means to evaluate the rate of organic/inorganic charge transfer and the effects of interface modification. Monolayers of the wide-gap alkane stearic acid and the conjugated oligomer terthiophene attached to the ZnO suppress or permit charge transfer, respectively.

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

NASA Astrophysics Data System (ADS)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

TRAP/SEE Code Users Manual for Predicting Trapped Radiation Environments

NASA Technical Reports Server (NTRS)

Armstrong, T. W.; Colborn, B. L.

2000-01-01

TRAP/SEE is a PC-based computer code with a user-friendly interface which predicts the ionizing radiation exposure of spacecraft having orbits in the Earth's trapped radiation belts. The code incorporates the standard AP8 and AE8 trapped proton and electron models but also allows application of an improved database interpolation method. The code treats low-Earth as well as highly-elliptical Earth orbits, taking into account trajectory perturbations due to gravitational forces from the Moon and Sun, atmospheric drag, and solar radiation pressure. Orbit-average spectra, peak spectra per orbit, and instantaneous spectra at points along the orbit trajectory are calculated. Described in this report are the features, models, model limitations and uncertainties, input and output descriptions, and example calculations and applications for the TRAP/SEE code.

Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.

PubMed

Zhernokletov, Dmitry M; Negara, Muhammad A; Long, Rathnait D; Aloni, Shaul; Nordlund, Dennis; McIntyre, Paul C

2015-06-17

We correlate interfacial defect state densities with the chemical composition of the Al2O3/GaN interface in metal-oxide-semiconductor (MOS) structures using synchrotron photoelectron emission spectroscopy (PES), cathodoluminescence and high-temperature capacitance-voltage measurements. The influence of the wet chemical pretreatments involving (1) HCl+HF etching or (2) NH4OH(aq) exposure prior to atomic layer deposition (ALD) of Al2O3 were investigated on n-type GaN (0001) substrates. Prior to ALD, PES analysis of the NH4OH(aq) treated surface shows a greater Ga2O3 component compared to either HCl+HF treated or as-received surfaces. The lowest surface concentration of oxygen species is detected on the acid etched surface, whereas the NH4OH treated sample reveals the lowest carbon surface concentration. Both surface pretreatments improve electrical characteristics of MOS capacitors compared to untreated samples by reducing the Al2O3/GaN interface state density. The lowest interfacial trap density at energies in the upper band gap is detected for samples pretreated with NH4OH. These results are consistent with cathodoluminescence data indicating that the NH4OH treated samples show the strongest band edge emission compared to as-received and acid etched samples. PES results indicate that the combination of reduced carbon contamination while maintaining a Ga2O3 interfacial layer by NH4OH(aq) exposure prior to ALD results in fewer interface traps after Al2O3 deposition on the GaN substrate.

Passivation of Ge/high-κ interface using RF Plasma nitridation

NASA Astrophysics Data System (ADS)

Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

2018-01-01

In this paper, plasma nitridation of a germanium surface using NH3 and N2 gases is performed with a standard RF-PECVD method at a substrate temperature of 250 °C. The structural and optical properties of the Ge surface have been investigated using Atomic Force Microscopy (AFM), Fourier Transform Infrared Spectroscopy (FT-IR), and Variable Angle Spectroscopic Ellipsometery (VASE). Study of the Ge (100) surface revealed that it is nitrated after plasma treatment while the GeO2 regrowth on the surface has been suppressed. Also, stability of the treated surface under air exposure is observed, where all the measurements were performed at room ambient. The electrical characteristics of fabricated Al/Ti/HfO2/GeON/p-Ge capacitors using the proposed surface treatment technique have been investigated. The C-V curves indicated a negligible hysteresis compared to ˜500 mV observed in untreated samples. Additionally, the C-V characteristic is used to extract the high-κ/Ge interface trap density using the most commonly used methods in determining the interface traps. The discussion includes the Dit calculation from the high-low frequency (Castagné-Vapaille) method and Terman (high-frequency) method. The high-low frequency method indicated a low interface trap density of ˜2.5 × 1011 eV-1.cm-2 compared to the Terman method. The J-V measurements revealed more than two orders of magnitude reduction of the gate leakage. This improved Ge interface quality is a promising low-temperature technique for fabricating high-performance Ge MOSFETs.

Charge Trapping in Interface Doped MNOS Structures.

DTIC Science & Technology

1981-07-01

Current density 55 0 JN Current density in nitride at gate 55 k Boltzmann’s constant: 1.38 x 10-23 joule /0K 85 m Effective mass of carrier 89 xi MIS...Trap Barrier Lowering by Applied Field: Poole-Frenkel Effect 90 vi Figure 3- 2: Thermally Stimulated Current System 92 Figure 3- 3: TSC Curves from a...Tungsten Atomic Concentration vs Effective Thickness 175 ix List of Tables Table 1-1: Trap Energy Levels and Spatial Densities 31 Table 2-1: Device

Positron spectroscopy of 2D materials using an advanced high intensity positron beam

NASA Astrophysics Data System (ADS)

McDonald, A.; Chirayath, V.; Lim, Z.; Gladen, R.; Chrysler, M.; Fairchild, A.; Koymen, A.; Weiss, A.

An advanced high intensity variable energy positron beam(~1eV to 20keV) has been designed, tested and utilized for the first coincidence Doppler broadening (CDB) measurements on 6-8 layers graphene on polycrystalline Cu sample. The system is capable of simultaneous Positron annihilation induced Auger electron Spectroscopy (PAES) and CDB measurements giving it unparalleled sensitivity to chemical structure at external surfaces, interfaces and internal pore surfaces. The system has a 3m flight path up to a micro channel plate (MCP) for the Auger electrons emitted from the sample. This gives a superior energy resolution for PAES. A solid rare gas(Neon) moderator was used for the generation of the monoenergetic positron beam. The positrons were successfully transported to the sample chamber using axial magnetic field generated with a series of Helmholtz coils. We will discuss the PAES and coincidence Doppler broadening measurements on graphene -Cu sample and present an analysis of the gamma spectra which indicates that a fraction of the positrons implanted at energies 7-60eV can become trapped at the graphene/metal interface. This work was supported by NSF Grant No. DMR 1508719 and DMR 1338130.

Role of polytypism and degree of hexagonality on the photoinduced optical second harmonic generation in SiC nanocrystalline films

NASA Astrophysics Data System (ADS)

Semenov, A.; Puziko, V.; Skorik, S.; Wojciechowski, A.; Fedorchuk, A. O.; Maciąg, A.

2015-05-01

Photoinduced optiсal second harmonic generation was studied in nanocrystalline SiC films prepared by the method of direct ion deposition. For the studies were chosen three types of polytypes (with different degree of hexagonality) - 24R with degree hexagonality G=25, 27R-G=44, 33R with - G=36. The bicolor photoinduced treatment was performed by the wavelengths 1064nm/532 nm by 15 ns YAG:Nd laser. The efficiency of the output SHG was evaluated by ratio of the corresponding signal intensities with respect to the references and by the time delay between the SHG and the fundamental maxima. Explanation of the observed effect is given within a framework of the occurrence of the nano-trapping levels in the film crystalline interfaces.

A PIV Study of Drop-interface Coalescence with Surfactants

NASA Astrophysics Data System (ADS)

Weheliye, Weheliye Hashi; Dong, Teng; Angeli, Panagiota

2017-11-01

In this work, the coalescence of a drop with an aqueous-organic interface was studied by Particle Image Velocimetry (PIV). The effect of surfactants on the drop surface evolution, the vorticity field and the kinetic energy distribution in the drop during coalescence were investigated. The coalescence took place in an acrylic rectangular box with 79% glycerol solution at the bottom and Exxsol D80 oil above. The glycerol solution drop was generated through a nozzle fixed at 2cm above the aqueous/oil interface and was seeded with Rhodamine particles. The whole process was captured by a high-speed camera. Different mass ratios of non-ionic surfactant Span80 to oil were studied. The increase of surfactant concentration promoted deformation of the interface before the rupture of the trapped oil film. At the early stages after film rupture, two counter-rotating vortices appeared at the bottom of the drop which then travelled to the upper part. The propagation rates, as well as the intensities of the vortices decreased at high surfactant concentrations. At early stages, the kinetic energy was mainly distributed near the bottom part of the droplet, while at later stages it was distributed near the upper part of the droplet. Programme Grant MEMPHIS, Chinese Scholarship Council (CSC).

Captures of Ostrinia furnacalis (Lepidoptera: Crambidae) With Sex Pheromone Traps in NE China Corn and Soybeans.

PubMed

Chen, Ri-Zhao; Li, Lian-Bing; Klein, Michael G; Li, Qi-Yun; Li, Peng-Pei; Sheng, Cheng-Fa

2016-02-01

Ostrinia furnacalis (Guenée) (Lepidoptera: Crambidae), commonly referred to as the Asian corn borer, is the most important corn pest in Asia. Although capturing males with pheromone traps has recently been the main monitoring tool and suppression technique, the best trap designs remain unclear. Commercially available Delta and funnel traps, along with laboratory-made basin and water traps, and modified Delta traps, were evaluated in corn and soybean fields during 2013-2014 in NE China. The water trap was superior for capturing first-generation O. furnacalis (1.37 times the Delta trap). However, the basin (8.3 ± 3.2 moths/trap/3 d), Delta (7.9 ± 2.5), and funnel traps (7.0 ± 2.3) were more effective than water traps (1.4 ± 0.4) during the second generation. Delta traps gave optimal captures when deployed at ca. 1.57 × the highest corn plants, 1.36× that of average soybean plants, and at the field borders. In Delta traps modified by covering 1/3 of their ends, captures increased by ca. 15.7 and 8.1% in the first and second generations, respectively. After 35 d in the field, pheromone lures were still ca. 50% as attractive as fresh lures, and retained this level of attraction for ca. 25 more days. Increased captures (first and second generation: 90.9 ± 9.5%; 78.3 ± 9.3%) were obtained by adding a lure exposed for 5 d to funnel traps baited with a 35-d lure. © The Authors 2015. Published by Oxford University Press on behalf of Entomological Society of America. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

NASA Astrophysics Data System (ADS)

Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan

2017-07-01

We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

Dynamic Properties of Electronic Trapping Centers at the Si-SiO2 Interface.

DTIC Science & Technology

1983-05-01

Variation of i,. %.rhich is the sum of the majorty and minoritl) the integration is over the semiconductor bandgap. The for- carrier emision and capture...majority carriers, and the dashed line is for majority,- counted for, will yield erroneous interface-state distribu- carrier emision onl) tions

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P.

2013-11-25

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5 eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

NASA Astrophysics Data System (ADS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-05-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Zhi, Jiang; Yi-Qi, Zhuang; Cong, Li; Ping, Wang; Yu-Qi, Liu

2016-02-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (Dit) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Hybrid Quantum Systems with Trapped Charged Particles

NASA Astrophysics Data System (ADS)

Kotler, Shlomi; Leibfried, Dietrich; Simmonds, Raymond; Wineland, Dave

We will review a joint effort by the Ion Storage Group and the Advanced Microwave Photonics Group at NIST (Boulder, CO) to design a hybrid system that interfaces charged particles with macroscopic high-Q resonators. We specifically consider coupling trapped charges to superconducting LC resonators, the mechanical modes of Silicon-Nitride membranes, and piezo-electric materials. We aim to achieve the strong coupling regime, where a single quantum of motion of the trapped charge can be coherently exchanged with harmonic motion of the macroscopic entity (electrical and/or mechanical). These kind of devices could potentially take advantage of both macroscopic control techniques and the long quantum coherence of its trapped charged particles.

A Theoretical Study of Cold Air Damming.

NASA Astrophysics Data System (ADS)

Xu, Qin

1990-12-01

The dynamics of cold air damming are examined analytically with a two-layer steady state model. The upper layer is a warm and saturated cross-mountain (easterly or southeasterly onshore) flow. The lower layer is a cold mountain-parallel (northerly) jet trapped on the windward (eastern) side of the mountain. The interface between the two layers represents a coastal front-a sloping inversion layer coupling the trapped cold dome with the warm onshore flow above through pressure continuity.An analytical expression is obtained for the inviscid upper-layer flow with hydrostatic and moist adiabatic approximations. Blackadar's PBL parameterization of eddy viscosity is used in the lower-layer equations. Solutions for the mountain-parallel jet and its associated secondary transverse circulation are obtained by expanding asymptotically upon a small parameter proportional to the square root of the inertial aspect ratio-the ratio between the mountain height and the radius of inertial oscillation. The geometric shape of the sloping interface is solved numerically from a differential-integral equation derived from the pressure continuity condition imposed at the interface.The observed flow structures and force balances of cold air damming events are produced qualitatively by the model. In the cold dome the mountain-parallel jet is controlled by the competition between the mountain-parallel pressure gradient and friction: the jet is stronger with smoother surfaces, higher mountains, and faster mountain-normal geostrophic winds. In the mountain-normal direction the vertically averaged force balance in the cold dome is nearly geostrophic and controls the geometric shape of the cold dome. The basic mountain-normal pressure gradient generated in the cold dome by the negative buoyancy distribution tends to flatten the sloping interface and expand the cold dome upstream against the mountain-normal pressure gradient (produced by the upper-layer onshore wind) and Coriolis force (induced by the lower-layer mountain-parallel jet). It is found that the interface slope increases and the cold dome shrinks as the Froude number and/or upstream mountain-parallel geostrophic wind increase, or as the Rossby number, upper-layer depth, and/or surface roughness length decrease, and vice versa. The cold dome will either vanish or not be in a steady state if the Froude number is large enough or the roughness length gets too small. The theoretical findings are explained physically based on detailed analyses of the force balance along the inversion interface.

Dynamics and reactivity of trapped electrons on supported ice crystallites.

PubMed

Stähler, Julia; Gahl, Cornelius; Wolf, Martin

2012-01-17

The solvation dynamics and reactivity of localized excess electrons in aqueous environments have attracted great attention in many areas of physics, chemistry, and biology. This manifold attraction results from the importance of water as a solvent in nature as well as from the key role of low-energy electrons in many chemical reactions. One prominent example is the electron-induced dissociation of chlorofluorocarbons (CFCs). Low-energy electrons are also critical in the radiation chemistry that occurs in nuclear reactors. Excess electrons in an aqueous environment are localized and stabilized by the local rearrangement of the surrounding water dipoles. Such solvated or hydrated electrons are known to play an important role in systems such as biochemical reactions and atmospheric chemistry. Despite numerous studies over many years, little is known about the microscopic details of these electron-induced chemical processes, and interest in the fundamental processes involved in the reactivity of trapped electrons continues. In this Account, we present a surface science study of the dynamics and reactivity of such localized low-energy electrons at D(2)O crystallites that are supported by a Ru(001) single crystal metal surface. This approach enables us to investigate the generation and relaxation dynamics as well as dissociative electron attachment (DEA) reaction of excess electrons under well-defined conditions. They are generated by photoexcitation in the metal template and transferred to trapping sites at the vacuum interface of crystalline D(2)O islands. In these traps, the electrons are effectively decoupled from the electronic states of the metal template, leading to extraordinarily long excited state lifetimes on the order of minutes. Using these long-lived, low-energy electrons, we study the DEA to CFCl(3) that is coadsorbed at very low concentrations (∼10(12) cm(-2)). Using rate equations and direct measurement of the change of surface dipole moment, we estimated the electron surface density for DEA, yielding cross sections that are orders of magnitude higher than the electron density measured in the gas phase.

Memristive behavior of the SnO2/TiO2 interface deposited by sol-gel

NASA Astrophysics Data System (ADS)

Boratto, Miguel H.; Ramos, Roberto A.; Congiu, Mirko; Graeff, Carlos F. O.; Scalvi, Luis V. A.

2017-07-01

A novel and cheap Resistive Random Access Memory (RRAM) device is proposed within this work, based on the interface between antimony doped Tin Oxide (4%at Sb:SnO2) and Titanium Oxide (TiO2) thin films, entirely prepared through a low-temperature sol-gel process. The device was fabricated on glass slides using evaporated aluminum electrodes. Typical bipolar memristive behavior under cyclic voltage sweeping and square wave voltages, with well-defined high and low resistance states (HRS and LRS), and set and reset voltages are shown in our samples. The switching mechanism, explained by charges trapping/de-trapping by defects in the SnO2/TiO2 interface, is mainly driven by the external electric field. The calculated on/off ratio was about 8 × 102 in best conditions with good reproducibility over repeated measurement cycles under cyclic voltammetry and about 102 under applied square wave voltage.

Optical trapping reveals propulsion forces, power generation and motility efficiency of the unicellular parasites Trypanosoma brucei brucei

NASA Astrophysics Data System (ADS)

Stellamanns, Eric; Uppaluri, Sravanti; Hochstetter, Axel; Heddergott, Niko; Engstler, Markus; Pfohl, Thomas

2014-10-01

Unicellular parasites have developed sophisticated swimming mechanisms to survive in a wide range of environments. Cell motility of African trypanosomes, parasites responsible for fatal illness in humans and animals, is crucial both in the insect vector and the mammalian host. Using millisecond-scale imaging in a microfluidics platform along with a custom made optical trap, we are able to confine single cells to study trypanosome motility. From the trapping characteristics of the cells, we determine the propulsion force generated by cells with a single flagellum as well as of dividing trypanosomes with two fully developed flagella. Estimates of the dissipative energy and the power generation of single cells obtained from the motility patterns of the trypanosomes within the optical trap indicate that specific motility characteristics, in addition to locomotion, may be required for antibody clearance. Introducing a steerable second optical trap we could further measure the force, which is generated at the flagellar tip. Differences in the cellular structure of the trypanosomes are correlated with the trapping and motility characteristics and in consequence with their propulsion force, dissipative energy and power generation.

Optical trapping reveals propulsion forces, power generation and motility efficiency of the unicellular parasites Trypanosoma brucei brucei.

PubMed

Stellamanns, Eric; Uppaluri, Sravanti; Hochstetter, Axel; Heddergott, Niko; Engstler, Markus; Pfohl, Thomas

2014-10-01

Unicellular parasites have developed sophisticated swimming mechanisms to survive in a wide range of environments. Cell motility of African trypanosomes, parasites responsible for fatal illness in humans and animals, is crucial both in the insect vector and the mammalian host. Using millisecond-scale imaging in a microfluidics platform along with a custom made optical trap, we are able to confine single cells to study trypanosome motility. From the trapping characteristics of the cells, we determine the propulsion force generated by cells with a single flagellum as well as of dividing trypanosomes with two fully developed flagella. Estimates of the dissipative energy and the power generation of single cells obtained from the motility patterns of the trypanosomes within the optical trap indicate that specific motility characteristics, in addition to locomotion, may be required for antibody clearance. Introducing a steerable second optical trap we could further measure the force, which is generated at the flagellar tip. Differences in the cellular structure of the trypanosomes are correlated with the trapping and motility characteristics and in consequence with their propulsion force, dissipative energy and power generation.

A versatile strategy for gene trapping and trap conversion in emerging model organisms.

PubMed

Kontarakis, Zacharias; Pavlopoulos, Anastasios; Kiupakis, Alexandros; Konstantinides, Nikolaos; Douris, Vassilis; Averof, Michalis

2011-06-01

Genetic model organisms such as Drosophila, C. elegans and the mouse provide formidable tools for studying mechanisms of development, physiology and behaviour. Established models alone, however, allow us to survey only a tiny fraction of the morphological and functional diversity present in the animal kingdom. Here, we present iTRAC, a versatile gene-trapping approach that combines the implementation of unbiased genetic screens with the generation of sophisticated genetic tools both in established and emerging model organisms. The approach utilises an exon-trapping transposon vector that carries an integrase docking site, allowing the targeted integration of new constructs into trapped loci. We provide proof of principle for iTRAC in the emerging model crustacean Parhyale hawaiensis: we generate traps that allow specific developmental and physiological processes to be visualised in unparalleled detail, we show that trapped genes can be easily cloned from an unsequenced genome, and we demonstrate targeting of new constructs into a trapped locus. Using this approach, gene traps can serve as platforms for generating diverse reporters, drivers for tissue-specific expression, gene knockdown and other genetic tools not yet imagined.

Local Time-Dependent Charging in a Perovskite Solar Cell.

PubMed

Bergmann, Victor W; Guo, Yunlong; Tanaka, Hideyuki; Hermes, Ilka M; Li, Dan; Klasen, Alexander; Bretschneider, Simon A; Nakamura, Eiichi; Berger, Rüdiger; Weber, Stefan A L

2016-08-03

Efficient charge extraction within solar cells explicitly depends on the optimization of the internal interfaces. Potential barriers, unbalanced charge extraction, and interfacial trap states can prevent cells from reaching high power conversion efficiencies. In the case of perovskite solar cells, slow processes happening on time scales of seconds cause hysteresis in the current-voltage characteristics. In this work, we localized and investigated these slow processes using frequency-modulation Kelvin probe force microscopy (FM-KPFM) on cross sections of planar methylammonium lead iodide (MAPI) perovskite solar cells. FM-KPFM can map the charge density distribution and its dynamics at internal interfaces. Upon illumination, space charge layers formed at the interfaces of the selective contacts with the MAPI layer within several seconds. We observed distinct differences in the charging dynamics at the interfaces of MAPI with adjacent layers. Our results indicate that more than one process is involved in hysteresis. This finding is in agreement with recent simulation studies claiming that a combination of ion migration and interfacial trap states causes the hysteresis in perovskite solar cells. Such differences in the charging rates at different interfaces cannot be separated by conventional device measurements.

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

NASA Astrophysics Data System (ADS)

Rao, Ashwath; Verma, Ankita; Singh, B. R.

2015-06-01

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta2O5/Si metal oxide semiconductor (MOS) capacitors using capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100 rad to 1 Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta2O5/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta2O5 MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N2 ambient. The density of interface trap states (Dit) at Ta2O5/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta2O5/Si MOS devices.

Trap-induced photoconductivity in singlet fission pentacene diodes

NASA Astrophysics Data System (ADS)

Qiao, Xianfeng; Zhao, Chen; Chen, Bingbing; Luan, Lin

2014-07-01

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

2.4 Å resolution crystal structure of human TRAP1NM, the Hsp90 paralog in the mitochondrial matrix.

PubMed

Sung, Nuri; Lee, Jungsoon; Kim, Ji Hyun; Chang, Changsoo; Tsai, Francis T F; Lee, Sukyeong

2016-08-01

TRAP1 is an organelle-specific Hsp90 paralog that is essential for neoplastic growth. As a member of the Hsp90 family, TRAP1 is presumed to be a general chaperone facilitating the late-stage folding of Hsp90 client proteins in the mitochondrial matrix. Interestingly, TRAP1 cannot replace cytosolic Hsp90 in protein folding, and none of the known Hsp90 co-chaperones are found in mitochondria. Thus, the three-dimensional structure of TRAP1 must feature regulatory elements that are essential to the ATPase activity and chaperone function of TRAP1. Here, the crystal structure of a human TRAP1NM dimer is presented, featuring an intact N-domain and M-domain structure, bound to adenosine 5'-β,γ-imidotriphosphate (ADPNP). The crystal structure together with epitope-mapping results shows that the TRAP1 M-domain loop 1 contacts the neighboring subunit and forms a previously unobserved third dimer interface that mediates the specific interaction with mitochondrial Hsp70.

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

NASA Astrophysics Data System (ADS)

Li, Yun; Jiang, Hai; Lun, Zhiyuan; Wang, Yijiao; Huang, Peng; Hao, Hao; Du, Gang; Zhang, Xing; Liu, Xiaoyan

2016-04-01

Degradation behaviors in the high-k/metal gate stacks of nMOSFETs are investigated by three-dimensional (3D) kinetic Monte-Carlo (KMC) simulation with multiple trap coupling. Novel microscopic mechanisms are simultaneously considered in a compound system: (1) trapping/detrapping from/to substrate/gate; (2) trapping/detrapping to other traps; (3) trap generation and recombination. Interacting traps can contribute to random telegraph noise (RTN), bias temperature instability (BTI), and trap-assisted tunneling (TAT). Simulation results show that trap interaction induces higher probability and greater complexity in trapping/detrapping processes and greatly affects the characteristics of RTN and BTI. Different types of trap distribution cause largely different behaviors of RTN, BTI, and TAT. TAT currents caused by multiple trap coupling are sensitive to the gate voltage. Moreover, trap generation and recombination have great effects on the degradation of HfO2-based nMOSFETs under a large stress.

Trapping a 96° domain rotation in two distinct conformations by engineered disulfide bridges

PubMed Central

Schultz-Heienbrok, Robert; Maier, Timm; Sträter, Norbert

2004-01-01

Engineering disulfide bridges is a common technique to lock a protein movement in a defined conformational state. We have designed two double mutants of Escherichia coli 5′-nucleotidase to trap the enzyme in both an open (S228C, P513C) and a closed (P90C, L424C) conformation by the formation of disulfide bridges. The mutant proteins have been expressed, purified, and crystallized, to structurally characterize the designed variants. The S228C, P513C is a double mutant crystallized in two different crystal forms with three independent conformers, which differ from each other by a rotation of up to 12° of the C-terminal domain with respect to the N-terminal domain. This finding, as well as an analysis of the domain motion in the crystal, indicates that the enzyme still exhibits considerable residual domain flexibility. In the double mutant that was designed to trap the enzyme in the closed conformation, the structure analysis reveals an unexpected intermediate conformation along the 96° rotation trajectory between the open and closed enzyme forms. A comparison of the five independent conformers analyzed in this study shows that the domain movement of the variant enzymes is characterized by a sliding movement of the residues of the domain interface along the interface, which is in contrast to a classical closure motion where the residues of the domain interface move perpendicular to the interface. PMID:15215524

Spatial mismatch between sea lamprey behaviour and trap location explains low success at trapping for control

USGS Publications Warehouse

Rous, Andrew M.; McLean, Adrienne R.; Barber, Jessica; Bravener, Gale; Castro-Santos, Theodore; Holbrook, Christopher M.; Imre, Istvan; Pratt, Thomas C.; McLaughlin, Robert L.

2017-01-01

Crucial to the management of invasive species is understanding space use and the environmental features affecting space use. Improved understanding of space use by invasive sea lamprey (Petromyzon marinus) could help researchers discern why trap success in large rivers is lower than needed for effective control. We tested whether manipulating discharge nightly could increase trap success at a hydroelectric generating station on the St. Marys River. We quantified numbers of acoustically tagged sea lampreys migrating up to, and their space use at, the hydroelectric generating station. In 2011 and 2012, 78% and 68%, respectively, of tagged sea lampreys reached the generating station. Sea lampreys were active along the face, but more likely to occur at the bottom and away from the traps near the surface, especially when discharge was high. Our findings suggest that a low probability of encountering traps was due to spatial (vertical) mismatch between space use by sea lamprey and trap locations and that increasing discharge did not alter space use in ways that increased trap encounter. Understanding space use by invasive species can help managers assess the efficacy of trapping and ways of improving trapping success.

Hysteresis mechanism and control in pentacene organic field-effect transistors with polymer dielectric

NASA Astrophysics Data System (ADS)

Huang, Wei; Shi, Wei; Han, Shijiao; Yu, Junsheng

2013-05-01

Hysteresis mechanism of pentacene organic field-effect transistors (OFETs) with polyvinyl alcohol (PVA) and/or polymethyl methacrylate (PMMA) dielectrics is studied. Through analyzing the electrical characteristics of OFETs with various PVA/PMMA arrangements, it shows that charge, which is trapped in PVA bulk and at the interface of pentacene/PVA, is one of the origins of hysteresis. The results also show that memory window is proportional to both trap amount in PVA and charge density at the gate/PVA or PVA/pentacene interfaces. Hence, the controllable memory window of around 0 ˜ 10 V can be realized by controlling the thickness and combination of triple-layer polymer dielectrics.

Barnacles resist removal by crack trapping

PubMed Central

Hui, Chung-Yuen; Long, Rong; Wahl, Kathryn J.; Everett, Richard K.

2011-01-01

We study the mechanics of pull-off of a barnacle adhering to a thin elastic layer which is bonded to a rigid substrate. We address the case of barnacles having acorn shell geometry and hard, calcarious base plates. Pull-off is initiated by the propagation of an interface edge crack between the base plate and the layer. We compute the energy release rate of this crack as it grows along the interface using a finite element method. We also develop an approximate analytical model to interpret our numerical results and to give a closed-form expression for the energy release rate. Our result shows that the resistance of barnacles to interfacial failure arises from a crack-trapping mechanism. PMID:21208968

Effect of dielectric stoichiometry and interface chemical state on band alignment between tantalum oxide and platinum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lebedinskii, Yu. Yu.; National Research Nuclear University MEPhI; Chernikova, A. G.

2015-10-05

The tantalum oxide–platinum interface electronic properties determined by X-ray photoelectron spectroscopy are found to depend on the dielectric stoichiometry and platinum chemical state. We demonstrate the slow charging of the tantalum oxide in cases of Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces under the X-ray irradiation. This behavior is proposed to be related to the charge accumulation at oxygen vacancies induced traps. Based on the proposed methodology, we define the intrinsic conductive band offset (CBO) ∼1.3 eV (both for Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt) and CBO after the full saturation of the traps charging ∼0.5 eV, while the lastmore » one defines the energy position of charged traps below the bottom of conduction band. We demonstrate also the pining at the both Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces even in the “intrinsic” state, apparently induced by the presence of additional interfacial states. No shifts of Ta4f line and band alignment in over stoichiometric Ta{sub 2}O{sub 5+x}/Pt structure during X-ray irradiation, as well as the absence of pinning, resulting in increase of CBO up to 2.3 eV are found. This behavior is related to the PtO{sub 2} interfacing layer formation at Ta{sub 2}O{sub 5+x}/Pt, blocking the charging of the surface states and associated dipole formation.« less

Simulated Breeding

NASA Astrophysics Data System (ADS)

Unemi, Tatsuo

This chapter describes a basic framework of simulated breeding, a type of interactive evolutionary computing to breed artifacts, whose origin is Blind Watchmaker by Dawkins. These methods make it easy for humans to design a complex object adapted to his/her subjective criteria, just similarly to agricultural products we have been developing over thousands of years. Starting from randomly initialized genome, the solution candidates are improved through several generations with artificial selection. The graphical user interface helps the process of breeding with techniques of multifield user interface and partial breeding. The former improves the diversity of individuals that prevents being trapped at local optimum. The latter makes it possible for the user to fix features he/she already satisfied. These methods were examined through artistic applications by the author: SBART for graphics art and SBEAT for music. Combining with a direct genome editor and exportation to another graphical or musical tool on the computer, they can be powerful tools for artistic creation. These systems may contribute to the creation of a type of new culture.

Light trapping for solar fuel generation with Mie resonances.

PubMed

Kim, Soo Jin; Thomann, Isabell; Park, Junghyun; Kang, Ju-Hyung; Vasudev, Alok P; Brongersma, Mark L

2014-03-12

The implementation of solar fuel generation as a clean, terawatt-scale energy source is critically dependent on the development of high-performance, inexpensive photocatalysts. Many candidate materials, including for example α-Fe2O3 (hematite), suffer from very poor charge transport with minority carrier diffusion lengths that are significantly shorter (nanometer scale) than the absorption depth of light (micrometer scale near the band edge). As a result, most of the photoexcited carriers recombine rather than participate in water-splitting reactions. For this reason, there is a tremendous opportunity for photon management. Plasmon-resonant nanostructures have been employed to effectively enhance light absorption in the near-surface region of photocatalysts, but this approach suffers from intrinsic optical losses in the metal. Here, we circumvent this issue by driving optical resonances in the active photocatalyst material itself. We illustrate that judiciously nanopatterned photocatalysts support optical Mie and guided resonances capable of substantially enhancing the photocarrier generation rate within 10-20 nm from the water/photocatalyst interface.

Enrichment of viable bacteria in a micro-volume by free-flow electrophoresis.

PubMed

Podszun, Susann; Vulto, Paul; Heinz, Helene; Hakenberg, Sydney; Hermann, Carsten; Hankemeier, Thomas; Urban, Gerald A

2012-02-07

Macro- to micro-volume concentration of viable bacteria is performed in a microfluidic chip. The enrichment principle is based on free flow electrophoresis and is demonstrated for Gram positive bacteria. Bacteria from a suspension flow are trapped on a gel interface that separates the trapping location from integrated actuation electrodes in order to enable non-destructive trapping. The microfluidic chip contains integrated electrolytic gas expulsion structures and phaseguides for gel and liquid handling. Trapping efficiency is systematically optimized to reach 25 times the initial concentration from a theoretical maximum of 30. Finally, enrichment from analytically relevant concentrations down to 3 × 10(2) colony forming units per millilitre is demonstrated with a trapping efficiency of 80% which represents the most important parameter in enrichment.

Role of water mediated interactions in protein-protein recognition landscapes.

PubMed

Papoian, Garegin A; Ulander, Johan; Wolynes, Peter G

2003-07-30

The energy landscape picture of protein folding and binding is employed to optimize a number of pair potentials for direct and water-mediated interactions in protein complex interfaces. We find that water-mediated interactions greatly complement direct interactions in discriminating against various types of trap interactions that model those present in the cell. We highlight the context dependent nature of knowledge-based binding potentials, as contrasted with the situation for autonomous folding. By performing a Principal Component Analysis (PCA) of the corresponding interaction matrixes, we rationalize the strength of the recognition signal for each combination of the contact type and reference trap states using the differential in the idealized "canonical" amino acid compositions of native and trap layers. The comparison of direct and water-mediated contact potential matrixes emphasizes the importance of partial solvation in stabilizing charged groups in the protein interfaces. Specific water-mediated interresidue interactions are expected to influence significantly the kinetics as well as thermodynamics of protein association.

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.

PubMed

Na, Junhong; Joo, Min-Kyu; Shin, Minju; Huh, Junghwan; Kim, Jae-Sung; Piao, Mingxing; Jin, Jun-Eon; Jang, Ho-Kyun; Choi, Hyung Jong; Shim, Joon Hyung; Kim, Gyu-Tae

2014-01-07

Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the interface nicely described the noise behavior in the strong accumulation regime both with and without the Al2O3 passivation layer. The interface trap density at the MoS2-SiO2 interface was extracted from the LFN analysis, and estimated to be Nit ~ 10(10) eV(-1) cm(-2) without and with the passivation layer. This suggested that the accumulation channel induced by the back-gate was not significantly influenced by the passivation layer. The Hooge mobility fluctuation (HMF) model implying the bulk conduction was found to describe the drain current fluctuations in the subthreshold regime, which is rarely observed in other nanodevices, attributed to those extremely thin channel sizes. In the case of the thick-MoS2 (~40 nm-thick) without the passivation, the HMF model was clearly observed all over the operation regime, ensuring the existence of the bulk conduction in multilayer MoS2. With the Al2O3 passivation layer, the change in the noise behavior was explained from the point of formation of the additional top channel in the MoS2 because of the fixed charges in the Al2O3. The interface trap density from the additional CNF model was Nit = 1.8 × 10(12) eV(-1) cm(-2) at the MoS2-Al2O3 interface.

The excitation mechanism of btp2 Ir(acac) in CBP host.

PubMed

Xiao-Bo, Zhang; Fu-Xiang, Wei

2017-05-01

Whether bis(2-(2'-benzo[4,5-α]thienyl)pyridinato-N,C3')iridium(acetylacetonate) (btp 2 Ir(acac)) emission comes from carrier trapping and/or energy transfer, when doped in the 4,4'-bis(N-carbazolyl)biphenyl (CBP) host in organic light-emitting devices, is not clear; therefore, the btp 2 Ir(acac) emission in CBP hosts was studied. In the red-doped device, both N,N'-bis(1-naphthyl)-N,N'-diphenyl-1.1'-bipheny1-4-4'-diamine (NPB) and (1,1'-biphenyl-4'-oxy)bis(8-hydroxy-2-methylquinolinato)-aluminum (BAlq) emission appeared, which illustrated that CBP excitons cannot be formed at two emissive layer (EML) interfaces in the device. In the co-doped devices, NPB and BAlq emissions disappear and 1,4-bis[2-(3-N-ethylcarbazoryl)vinyl]benzene (BCzVB) emission appears, illustrating the formation of CBP excitons at two EML interfaces in these devices. The reason for this difference was analyzed and it was found that holes in the NPB layer could be made directly into the CBP host in the EML interface of the red-doped device. In contrast, holes were injected into CBP host via the btp 2 Ir(acac)/BCzVB dopants in the co-doped devices, which facilitated hole injection from the NPB layer to the EML, leading to the formation of CBP excitons at two EML interfaces in the co-doped devices. Therefore, btp 2 Ir(acac) emission was caused by carrier trapping in the red-doped device, while, in the co-doped devices, it resulted from both carrier trapping and energy transfer from the CBP. Furthermore, it was revealed that the carrier trapping mechanism is less efficient than the energy transfer mechanism for btp 2 Ir(acac) excitation in co-doped devices. In summary, our results clarified the excitation mechanism of btp 2 Ir(acac) in the CBP host. Copyright © 2016 John Wiley & Sons, Ltd.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leadingmore » to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.« less

Phase-field-crystal study of solute trapping

NASA Astrophysics Data System (ADS)

Humadi, Harith; Hoyt, Jeffrey J.; Provatas, Nikolas

2013-02-01

In this study we have incorporated two time scales into the phase-field-crystal model of a binary alloy to explore different solute trapping properties as a function of crystal-melt interface velocity. With only diffusive dynamics, we demonstrate that the segregation coefficient, K as a function of velocity for a binary alloy is consistent with the model of Kaplan and Aziz where K approaches unity in the limit of infinite velocity. However, with the introduction of wavelike dynamics in both the density and concentration fields, the trapping follows the kinetics proposed by Sobolev [Phys. Lett. A10.1016/0375-9601(95)00084-G 199, 383 (1995)], where complete trapping occurs at a finite velocity.

Particle Capture Devices and Methods of Use Thereof

NASA Technical Reports Server (NTRS)

Voldman, Joel (Inventor); Skelley, Alison M. (Inventor); Kirak, Oktay (Inventor); Jaenisch, Rudolf (Inventor)

2015-01-01

The present invention provides a device and methods of use thereof in microscale particle capturing and particle pairing. This invention provides particle patterning device, which mechanically traps individual particles within first chambers of capture units, transfer the particles to second chambers of opposing capture units, and traps a second type of particle in the same second chamber. The device and methods allow for high yield assaying of trapped cells, high yield fusion of trapped, paired cells, for controlled binding of particles to cells and for specific chemical reactions between particle interfaces and particle contents. The device and method provide means of identification of the particle population and a facile route to particle collection.

Hybrid quantum logic and a test of Bell's inequality using two different atomic isotopes.

PubMed

Ballance, C J; Schäfer, V M; Home, J P; Szwer, D J; Webster, S C; Allcock, D T C; Linke, N M; Harty, T P; Aude Craik, D P L; Stacey, D N; Steane, A M; Lucas, D M

2015-12-17

Entanglement is one of the most fundamental properties of quantum mechanics, and is the key resource for quantum information processing (QIP). Bipartite entangled states of identical particles have been generated and studied in several experiments, and post-selected or heralded entangled states involving pairs of photons, single photons and single atoms, or different nuclei in the solid state, have also been produced. Here we use a deterministic quantum logic gate to generate a 'hybrid' entangled state of two trapped-ion qubits held in different isotopes of calcium, perform full tomography of the state produced, and make a test of Bell's inequality with non-identical atoms. We use a laser-driven two-qubit gate, whose mechanism is insensitive to the qubits' energy splittings, to produce a maximally entangled state of one (40)Ca(+) qubit and one (43)Ca(+) qubit, held 3.5 micrometres apart in the same ion trap, with 99.8 ± 0.6 per cent fidelity. We test the CHSH (Clauser-Horne-Shimony-Holt) version of Bell's inequality for this novel entangled state and find that it is violated by 15 standard deviations; in this test, we close the detection loophole but not the locality loophole. Mixed-species quantum logic is a powerful technique for the construction of a quantum computer based on trapped ions, as it allows protection of memory qubits while other qubits undergo logic operations or are used as photonic interfaces to other processing units. The entangling gate mechanism used here can also be applied to qubits stored in different atomic elements; this would allow both memory and logic gate errors caused by photon scattering to be reduced below the levels required for fault-tolerant quantum error correction, which is an essential prerequisite for general-purpose quantum computing.

Gate voltage dependent 1/f noise variance model based on physical noise generation mechanisms in n-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Arai, Yukiko; Aoki, Hitoshi; Abe, Fumitaka; Todoroki, Shunichiro; Khatami, Ramin; Kazumi, Masaki; Totsuka, Takuya; Wang, Taifeng; Kobayashi, Haruo

2015-04-01

1/f noise is one of the most important characteristics for designing analog/RF circuits including operational amplifiers and oscillators. We have analyzed and developed a novel 1/f noise model in the strong inversion, saturation, and sub-threshold regions based on SPICE2 type model used in any public metal-oxide-semiconductor field-effect transistor (MOSFET) models developed by the University of California, Berkeley. Our model contains two noise generation mechanisms that are mobility and interface trap number fluctuations. Noise variability dependent on gate voltage is also newly implemented in our model. The proposed model has been implemented in BSIM4 model of a SPICE3 compatible circuit simulator. Parameters of the proposed model are extracted with 1/f noise measurements for simulation verifications. The simulation results show excellent agreements between measurement and simulations.

The use of hydrogenous material for sensitizing pMOS dosimeters to neutrons

NASA Astrophysics Data System (ADS)

Kronenberg, S.; Brucker, G. J.

1995-02-01

This paper is concerned with the application of pMOS dosimeters to measuring neutron dose by the use of hydrogenous materials to convert incident neutron flux to recoil protons. These latter charged particles can generate electron-hole pairs, and consequently, charge trapping takes place at the MOS interfaces, and threshold voltage shifts are produced. The use of pMOS devices for measuring gamma doses has been described extensively in the literature. Clearly, if measurable voltage shifts could be generated in a MOS device by neutrons, then a radiation detection instrument containing two MOS devices, back to back, with hydrogenous shields, and one MOS dosimeter without a converter would allow 4/spl pi/ measurements of neutron and gamma doses to be made. The results obtained in this study indicate that paraffin or polyethylene will convert incident, 2.82 MeV neutrons to recoil protons, which subsequently cause measurable voltage shifts.

Optical trapping reveals propulsion forces, power generation and motility efficiency of the unicellular parasites Trypanosoma brucei brucei

PubMed Central

Stellamanns, Eric; Uppaluri, Sravanti; Hochstetter, Axel; Heddergott, Niko; Engstler, Markus; Pfohl, Thomas

2014-01-01

Unicellular parasites have developed sophisticated swimming mechanisms to survive in a wide range of environments. Cell motility of African trypanosomes, parasites responsible for fatal illness in humans and animals, is crucial both in the insect vector and the mammalian host. Using millisecond-scale imaging in a microfluidics platform along with a custom made optical trap, we are able to confine single cells to study trypanosome motility. From the trapping characteristics of the cells, we determine the propulsion force generated by cells with a single flagellum as well as of dividing trypanosomes with two fully developed flagella. Estimates of the dissipative energy and the power generation of single cells obtained from the motility patterns of the trypanosomes within the optical trap indicate that specific motility characteristics, in addition to locomotion, may be required for antibody clearance. Introducing a steerable second optical trap we could further measure the force, which is generated at the flagellar tip. Differences in the cellular structure of the trypanosomes are correlated with the trapping and motility characteristics and in consequence with their propulsion force, dissipative energy and power generation. PMID:25269514

New Energy-Dependent Soft X-Rav Damage In MOS Devices

NASA Astrophysics Data System (ADS)

Chan, Tung-Yi; Gaw, Henry; Seligson, Daniel; Pan, Lawrence; King, Paul L.; Pianetta, Piero

1988-06-01

An energy-dependent soft x-ray-induced device damage has been discovered in MOS devices fabricated using standard CMOS process. MOS devices were irradiated by monochromatic x-rays in energy range just above and below the silicon K-edge (1.84 keV). Photons below the K-edge is found to create more damage in the oxide and oxide/silicon interface than photons above the K-edge. This energy-dependent damage effect is believed to be due to charge traps generated during device fabrication. It is found that data for both n- and p-type devices lie along a universal curve if normalized threshold voltage shifts are plotted against absorbed dose in the oxide. The threshold voltage shift saturates when the absorbed dose in the oxide exceeds 1.4X105 mJ/cm3, corresponding to 6 Mrad in the oxide. Using isochronal anneals, the trapped charge damage is found to recover with an activation energy of 0.38 eV. A discrete radiation-induced damage state appears in the low frequency C-V curve in a temperature range from 1750C to 325°C.

Preparation and UV-Vis photodegradation of gaseous benzene by TiO2 nanotube arrays supporting V2O5 nanoparticles

NASA Astrophysics Data System (ADS)

Zhao, Chunxia; Song, Yanbao; Yang, Yunxia; Chen, Wen; Li, Xiaoyu; Wang, Zongsheng

2015-07-01

TiO2-based catalysts effective in visible radiation for eliminating organic pollutants have attracted intense research activity as a future generation photocatalytic material. However, recombination of electron-hole pairs through trapping/de-trapping as well as the disadvantages of recycling and separation/filtration of powders lead to the limitation of powder TiO2 materials. TiO2 nanotube array films supporting vanadium pentoxide nanoparticles (VTNTs) were synthesized by electrophoresis deposition method with the prepared TiO2 nanotube arrays as the cathode and V2O5 sol as the electrolyte. The results indicate that the formation of Ti-O-V bonds and intimate interaction between host-guest interfaces help to enhance the hybrids’ photodegradation activity of gaseous benzene. Importantly, hybrid film catalysts prepared with 0.05 mol/L V2O5 sol for 10 min electrophoresis deposition perform a 98% conversion rate of benzene and 1028.8 mg/m3CO2 production in 80 min under UV-Vis irradiation.

Three-Dimensional Phenomena in Microbubble Acoustic Streaming

NASA Astrophysics Data System (ADS)

Marin, Alvaro; Rossi, Massimiliano; Rallabandi, Bhargav; Wang, Cheng; Hilgenfeldt, Sascha; Kähler, Christian J.

2015-04-01

Ultrasound-driven oscillating microbubbles are used as active actuators in microfluidic devices to perform manifold tasks such as mixing, sorting, and manipulation of microparticles. A common configuration consists of side bubbles created by trapping air pockets in blind channels perpendicular to the main channel direction. This configuration consists of acoustically excited bubbles with a semicylindrical shape that generate significant streaming flow. Because of the geometry of the channels, such flows are generally considered as quasi-two-dimensional. Similar assumptions are often made in many other microfluidic systems based on flat microchannels. However, in this Letter we show that microparticle trajectories actually present a much richer behavior, with particularly strong out-of-plane dynamics in regions close to the microbubble interface. Using astigmatism particle-tracking velocimetry, we reveal that the apparent planar streamlines are actually projections of a stream surface with a pseudotoroidal shape. We, therefore, show that acoustic streaming cannot generally be assumed as a two-dimensional phenomenon in confined systems. The results have crucial consequences for most of the applications involving acoustic streaming such as particle trapping, sorting, and mixing.

Electrostatic particle trap for ion beam sputter deposition

DOEpatents

Vernon, Stephen P.; Burkhart, Scott C.

2002-01-01

A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors

DTIC Science & Technology

2011-03-01

Figures Figure Page 1. Conceptual illustration of the creation of electron-hole pairs and displacement damage in a n -type silicon metal-oxide-silicon...Illustration of the effect, in a CV plot, of oxide trapped charge for a hypothetical n -type device...8 5. Illustration of the effect, in a CV plot, of interface trapped charge for a hypothetical n -type device

Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Zhao, Sheng-Lei; Xue, Jun-Shuai; Zhu, Jie-Jie; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-12-01

In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states. Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices

NASA Astrophysics Data System (ADS)

Jia, Yifan; Lv, Hongliang; Niu, Yingxi; Li, Ling; Song, Qingwen; Tang, Xiaoyan; Li, Chengzhan; Zhao, Yanli; Xiao, Li; Wang, Liangyong; Tang, Guangming; Zhang, Yimen; Zhang, Yuming

2016-09-01

The effect of nitric oxide (NO) annealing on charge traps in the oxide insulator and transition layer in n-type 4H-SiC metal-oxide-semiconductor (MOS) devices has been investigated using the time-dependent bias stress (TDBS), capacitance-voltage (C-V), and secondary ion mass spectroscopy (SIMS). It is revealed that two main categories of charge traps, near interface oxide traps (Nniot) and oxide traps (Not), have different responses to the TDBS and C-V characteristics in NO-annealed and Ar-annealed samples. The Nniot are mainly responsible for the hysteresis occurring in the bidirectional C-V characteristics, which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor. However, Not is mainly responsible for the TDBS induced C-V shifts. Electrons tunneling into the Not are hardly released quickly when suffering TDBS, resulting in the problem of the threshold voltage stability. Compared with the Ar-annealed sample, Nniot can be significantly suppressed by the NO annealing, but there is little improvement of Not. SIMS results demonstrate that the Nniot are distributed within the transition layer, which correlated with the existence of the excess silicon. During the NO annealing process, the excess Si atoms incorporate into nitrogen in the transition layer, allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot. Project supported by the National Natural Science Foundation of China (Grant Nos. 61404098 and 61274079), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), the National Grid Science & Technology Project, China (Grant No. SGRI-WD-71-14-018), and the Key Specific Project in the National Science & Technology Program, China (Grant Nos. 2013ZX02305002-002 and 2015CB759600).

Energy of adhesion of human T cells to adsorption layers of monoclonal antibodies measured by a film trapping technique.

PubMed Central

Ivanov, I B; Hadjiiski, A; Denkov, N D; Gurkov, T D; Kralchevsky, P A; Koyasu, S

1998-01-01

A novel method for studying the interaction of biological cells with interfaces (e.g., adsorption monolayers of antibodies) is developed. The method is called the film trapping technique because the cell is trapped within an aqueous film of equilibrium thickness smaller than the cell diameter. A liquid film of uneven thickness is formed around the trapped cell. When observed in reflected monochromatic light, this film exhibits an interference pattern of concentric bright and dark fringes. From the radii of the fringes one can restore the shape of interfaces and the cell. Furthermore, one can calculate the adhesive energy between the cell membrane and the aqueous film surface (which is covered by a layer of adsorbed proteins and/or specific ligands), as well as the disjoining pressure, representing the force of interaction per unit area of the latter film. The method is applied to two human T cell lines: Jurkat and its T cell receptor negative (TCR-) derivative. The interaction of these cells with monolayers of three different monoclonal antibodies adsorbed at a water-air interface is studied. The results show that the adhesive energy is considerable (above 0.5 mJ/m2) when the adsorption monolayer contains antibodies acting as specific ligands for the receptors expressed on the cell surface. In contrast, the adhesive energy is close to zero in the absence of such a specific ligand-receptor interaction. In principle, the method can be applied to the study of the interaction of a variety of biological cells (B cells, natural killer cells, red blood cells, etc.) with adsorption monolayers of various biologically active molecules. In particular, film trapping provides a tool for the gentle micromanipulation of cells and for monitoring of processes (say the activation of a T lymphocyte) occurring at the single-cell level. PMID:9649417

IGDS/TRAP Interface Program (ITIP). Detailed Design Specification (DDS). [network flow diagrams for coal gasification studies

NASA Technical Reports Server (NTRS)

Jefferys, S.; Johnson, W.; Lewis, R.; Rich, R.

1981-01-01

The software modules which comprise the IGDS/TRAP Interface Program are described. A hierarchical input processing output (HIPO) chart for each user command is given. The description consists of: (1) function of the user command; (2) calling sequence; (3) moduls which call this use command; (4) modules called by this user command; (5) IGDS commands used by this user command; and (6) local usage of global registers. Each HIPO contains the principal functions performed within the module. Also included with each function are a list of the inputs which may be required to perform the function and a list of the outputs which may be created as a result of performing the function.

Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering

NASA Astrophysics Data System (ADS)

Ji, Hyunjin; Lee, Gwanmu; Joo, Min-Kyu; Yun, Yoojoo; Yi, Hojoon; Park, Ji-Hoon; Suh, Dongseok; Lim, Seong Chu

2017-05-01

The correlation between the channel thickness and the carrier mobility is investigated by conducting static and low frequency (LF) noise characterization for ambipolar carriers in multilayer MoTe2 transistors. For channel thicknesses in the range of 5-15 nm, both the low-field carrier mobility and the Coulomb-scattering-limited carrier mobility (μC) are maximal at a thickness of ˜10 nm. For LF noise, the interplay of interface trap density (NST), which was minimal at ˜10 nm, and the interfacial Coulomb scattering parameter (αSC), which decreased up to 10 nm and saturated above 10 nm, explained the mobility (μC) peaked near 10 nm by the carrier fluctuation and charge distribution.

Metasomatism, Fluid Overpressure and Brecciation at the Slab-Mantle Interface: Insights from the Livingstone Fault, New Zealand

NASA Astrophysics Data System (ADS)

Tarling, M.; Smith, S. A. F.; Scott, J.

2017-12-01

Juxtaposition of mantle peridotite and serpentinite against quartzofeldspathic and mafic schists occurs along the shallow slab-mantle interface in some subduction zones. This part of the subduction interface has been invoked as a possible source region of episodic tremor and slow slip, yet geological observations of fault zone structures and chemical reactions pertinent to this region are quite rare. The >1000 km long Livingstone Fault in New Zealand is a superbly exposed fault zone that provides a suitable analogue (both in terms of scale and the rock types involved) for the shallow slab-mantle interface. The fault is characterized by a foliated and highly sheared serpentinite mélange tens to several hundreds of meters wide that separates (partially serpentinised) peridotites from quartzofeldspathic schists. Talc- and tremolite-forming metasomatic reactions occurred along the margins of the mélange and around entrained pods due to mixing of serpentinite with silica- and calcium-rich fluids derived from the adjacent quartzofeldspathic schist. The metasomatic reactions generated significant volumes of water at the melange-schist contact that became trapped between the two relatively impermeable fault zone lithologies. On the schist side of the contact, brittle faulting was promoted by the formation of a laterally-continuous silicified zone up to tens of metres wide. On the melange side, a zone up to tens of metres wide of `crackle-breccias' containing veined stockworks of tremolite indicates periodic increases of pore pressure sufficient to cause hydraulic fracture of serpentinite. The crackle-breccias are multi-generational indicating that this process was episodic. Sr and Nd isotope data and permeability calculations suggest that the episodic brecciation process was critical to the transfer of fluids across the melange. Our observations suggest that fluid-producing metasomatic reactions along the shallow slab-mantle interface may contribute to the tremor signal by triggering brecciation events and promoting brittle failure in serpentinite and schist.

The Trapping Of Laser-Generated Biradicals With Molecular Oxygen: The Synthesis Of Peroxides Related To Vitamin K, Insect Pheromones And Prostaglandins.

NASA Astrophysics Data System (ADS)

Wilson, R. M.

1984-05-01

The theoretical and experimental considerations involved in laser-generated biradical trapping with molecular oxygen are discussed. This method has been applied in the elucidation of the mechanism of the photodegradation of Vitamin K via oxygen trapping of a preoxe-tane biradical. The trapping of biradicals derived from azoalkanes has been applied to the syntheses of pine beetle pheromone mimics and prostaglandin endoperoxide analogues.

Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures

NASA Astrophysics Data System (ADS)

Idris, M. I.; Weng, M. H.; Chan, H.-K.; Murphy, A. E.; Clark, D. T.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2016-12-01

In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance-voltage measurements taken for a range of frequencies have been utilized to extract parameters including flatband voltage, threshold voltage, effective oxide charge, and interface state density. The variation of these parameters with temperature has been investigated for bias sweeps in opposing directions and a comparison made between phosphorous doped and as-grown oxides. At room temperature, the effective oxide charge for SiO2 may be reduced by the phosphorous termination of dangling bonds at the interface. However, at high temperatures, the effective charge in the phosphorous doped oxide remains unstable and effects such as flatband voltage shift and threshold voltage shift dominate the characteristics. The instability in these characteristics was found to result from the trapped charges in the oxide (±1012 cm-3) or near interface traps at the interface of the gate oxide and the semiconductor (1012-1013 cm-2 eV-1). Hence, the performance enhancements observed for phosphorous doped oxides are not realised in devices operated at elevated temperatures.

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

NASA Astrophysics Data System (ADS)

Lagger, P.; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J.; Pogany, D.; Ostermaier, C.

2014-07-01

The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔVth, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness tD and barrier thickness tB, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔNit, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔNit is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

Electrical and optical characterizations of InAs/GaAs quantum dot solar cells

NASA Astrophysics Data System (ADS)

Han, Im Sik; Kim, Seung Hyun; Kim, Jong Su; Noh, Sam Kyu; Lee, Sang Jun; Kim, Honggyun; Kim, Deok-Kee; Leem, Jae-Young

2018-03-01

The electrical and optical characterizations of InAs/GaAs quantum dot solar cells (QDSCs) were investigated by frequency dependent capacitance-voltage ( C- V) measurements and photoreflectance (PR) spectroscopy. The C- V results confirmed that the frequency dependent junction capacitance ( C j) of QDSC is sensitive to the carrier exhaustion process through trapping and recapturing in the strain-induced defects and QD states caused by the interface strain between InAs and GaAs materials. As a result, at a low frequency (≤ 200 kHz), the C j of the QDSCs decreased with increasing InAs deposition thickness ( θ), leading to the decrease in carrier concentration ( N d) of the n-GaAs absorber layer due to the carrier losses processes caused by the trapping and re-capturing in the defects and the relatively large QDs. At θ ≤ 2.0 ML, the p-n junction electric field strength ( F pn) of the QDSCs which was evaluated by PR spectra decreased with increasing excitation photon intensity ( I ex) due to the typical field screening effect in the SC structure. On the other hand, the F pn of QDSCs with θ ≥ 2.5 ML approached a constant value with a relatively high I ex, which suggests that the decrease in photo-generated carriers in the QDSC was caused by the re-capturing and trapping process.

Trapping of edge dislocations by a moving smectic-A smectic-B interface

NASA Astrophysics Data System (ADS)

Oswald, P.; Lejcek, L.

1991-09-01

We analyze how the motion of the edge dislocations of the smectic-A liquid crystal allows the system to relax plastically the stresses that are generated during the growth of the smectic-B plastic crystal. These stresses are both due, to the density difference between the two phases, and to the layer thickness variation at the phase transition. In particular, we calculate under which conditions a dislocation can be trapped by the smectic-B phase. Finally, we suggest that this dynamical trapping is responsible for the very large amount of stacking faults observed by X-ray diffraction. Nous analysons comment le mouvement des dislocations coin du cristal liquide smectique A permet de relaxer plastiquement les contraintes induites par la croissance du cristal plastique smectique B. Ces contraintes sont engendrées à la fois par la différence de densité qui existe entre les deux phases et par la variation d'épaisseur des couches à la transition. Nous calculons en particulier dans quelles conditions une dislocation coin peut être piégée par le smectique B. Enfin, nous suggérons que ce piégeage dynamique est à l'origine de la très forte densité de fautes d'empilement qui est couramment observée aux rayons X dans la phase B.

2.4 Å resolution crystal structure of human TRAP1 NM , the Hsp90 paralog in the mitochondrial matrix

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, Nuri; Lee, Jungsoon; Kim, Ji-Hyun

2016-07-13

TRAP1 is an organelle-specific Hsp90 paralog that is essential for neoplastic growth. As a member of the Hsp90 family, TRAP1 is presumed to be a general chaperone facilitating the late-stage folding of Hsp90 client proteins in the mitochondrial matrix. Interestingly, TRAP1 cannot replace cytosolic Hsp90 in protein folding, and none of the known Hsp90 co-chaperones are found in mitochondria. Thus, the three-dimensional structure of TRAP1 must feature regulatory elements that are essential to the ATPase activity and chaperone function of TRAP1. Here, the crystal structure of a human TRAP1 NMdimer is presented, featuring an intact N-domain and M-domain structure, boundmore » to adenosine 5'-β,γ-imidotriphosphate (ADPNP). The crystal structure together with epitope-mapping results shows that the TRAP1 M-domain loop 1 contacts the neighboring subunit and forms a previously unobserved third dimer interface that mediates the specific interaction with mitochondrial Hsp70.« less

The diffusivity and solubility of deuterium in a high chromium martensitic steel

NASA Astrophysics Data System (ADS)

Forcey, K. S.; Iordanova, I.; Yaneva, M.

1997-01-01

The permeability, diffusivity and solubility of deuterium in the martensitic stainless steel MANET II have been studied in the temperature range 194-465°C by applying a time dependent gas-phase permeation technique. It was found that the temperature dependence of diffusivity and solubility could not be described by a simple Arrhenius expression over the entire temperature range investigated. At lower temperatures (below about 330°C) the diffusivity was found to be greatly reduced by the effects of trapping. Oriani's model has been applied to obtain the trapping energy and number density of the traps as well as the relative amounts of deuterium dissolved at lattice and trap sites. It is suggested that the most likely sites for trapping are at interfaces between the martensitic laths and between second phase particles and the surrounding metal matrix.

Charge retention in scaled SONOS nonvolatile semiconductor memory devices—Modeling and characterization

NASA Astrophysics Data System (ADS)

Hu, Yin; White, Marvin H.

1993-10-01

A new analytical model is developed to investigate the influence of the charge loss processes in the retention mode of the SONOS NVSM device. The model considers charge loss by the following processes: (1) electron back-tunneling from the nitride traps to the Si conduction band, (2) electron back-tunneling from the nitride traps to the Si/SiO 2 interface traps and (3) hole injection from the Si valence band to the nitride traps. An amphoteric trap charge distribution is used in this model. The new charge retention model predicts that process (1) determines the short term retention, while processes (2) and (3) determine the long term retention. Good agreement has been reached between the results of analytical calculations and the experimental retention data on both surface channel and buried channel SONOS devices.

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

NASA Technical Reports Server (NTRS)

Danchenko, V.; Brashears, S. S.; Fang, P. H.

1984-01-01

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

How the stiffness of the optical trap depends on the proximity of the dielectric interface

NASA Astrophysics Data System (ADS)

Jákl, Petr; Šerý, Mojmír; Liška, Miroslav; Zemánek, Pavel

2005-09-01

When a probe confined in a single focused laser beam approaches the surface, it is getting more influenced by the retroreflected beam. This beam interferes with the incident one and a weak standing wave (SW) is created, which slightly modulates the incident beam. We studied experimentally how this phenomena influences the optical trap properties if SW is created using surfaces of two different reflectivities. We used polystyrene probes of diameters 690 nm and 820 nm, tracked their positions with quadrant photodiode (QPD) and analysed their thermal motion to get the axial trap stiffness along optical axis.

Precise pooling and dispensing of microfluidic droplets towards micro- to macro-world interfacing

PubMed Central

Brouzes, Eric; Carniol, April; Bakowski, Tomasz; Strey, Helmut H.

2014-01-01

Droplet microfluidics possesses unique properties such as the ability to carry out multiple independent reactions without dispersion of samples in microchannels. We seek to extend the use of droplet microfluidics to a new range of applications by enabling its integration into workflows based on traditional technologies, such as microtiter plates. Our strategy consists in developing a novel method to manipulate, pool and deliver a precise number of microfluidic droplets. To this aim, we present a basic module that combines droplet trapping with an on-chip valve. We quantitatively analyzed the trapping efficiency of the basic module in order to optimize its design. We also demonstrate the integration of the basic module into a multiplex device that can deliver 8 droplets at every cycle. This device will have a great impact in low throughput droplet applications that necessitate interfacing with macroscale technologies. The micro- to macro- interface is particularly critical in microfluidic applications that aim at sample preparation and has not been rigorously addressed in this context. PMID:25485102

Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance

NASA Astrophysics Data System (ADS)

Pi, T. W.; Chen, W. S.; Lin, Y. H.; Cheng, Y. T.; Wei, G. J.; Lin, K. Y.; Cheng, C.-P.; Kwo, J.; Hong, M.

2017-01-01

This study investigates the origin of long-puzzled high frequency dispersion on the accumulation region of capacitance-voltage characteristics in an n-type GaAs-based metal-oxide-semiconductor. Probed adatoms with a high Pauling electronegativity, Ag and Au, unexpectedly donate charge to the contacted As/Ga atoms of as-grown α2 GaAs(001)-2 × 4 surfaces. The GaAs surface atoms behave as charge acceptors, and if not properly passivated, they would trap those electrons accumulated at the oxide and semiconductor interface under a positive bias. The exemplified core-level spectra of the Al2O3/n-GaAs(001)-2 × 4 and the Al2O3/n-GaAs(001)-4 × 6 interfaces exhibit remnant of pristine surface As emission, thereby causing high frequency dispersion in the accumulation region. For the p-type GaAs, electrons under a negatively biased condition are expelled from the interface, thereby avoiding becoming trapped.

High Performance Vertical Organic Field Effect Transistors

DTIC Science & Technology

2010-05-01

systems. In pentacene /C60 bilayer system, [4] we showed that both the disordered structure of C60 and the charge trapping effect at the C60...much less significant than that by charge trapping at the interface. We also demonstrated that blending CdTe nanoparticles into a polymer–fullerene...for space applications b. We studied the photomultiplication effect in both evaporated ( pentacene /C60 bilayer) and bulk- heterojunction donor/acceptor

Electrical properties of radio-frequency sputtered HfO2 thin films for advanced CMOS technology

NASA Astrophysics Data System (ADS)

Sarkar, Pranab Kumar; Roy, Asim

2015-08-01

The Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO2 film have been studied employing Al/HfO2/p-Si metal-oxide-semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO2 film is obtained as 23,7.57×1011eV-1 cm-2 and 2.7×10-5 Acm-2, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

Diffuse polymer interfaces in lobed nanoemulsions preserved in aqueous media.

PubMed

Kim, Ginam; Sousa, Alioscka; Meyers, Deborah; Shope, Marilyn; Libera, Matthew

2006-05-24

Using valence electron energy loss spectroscopy (EELS) in the cryo-scanning transmission electron microscopy (STEM), we found that the polymer-polymer interface in two-phase nanocolloids of polydimethyl siloxane (PDMS) and copolymer (methyl acrylate (MA)-methyl methacrylate (MMA)-vinyl acetate (VA)) preserved in water was diffuse despite the fact that equilibrium thermodynamics indicates it should only be on the order of a few nanometers. The diffuse interface is a result of the kinetic trapping of the copolymer within the PDMS phase, and this finding suggests new nonequilibrium pathways to control interfaces during the synthesis of multicomponent polymeric nanostructures.

Approaching a flat boundary with a block copolymer coated emulsion drop: late stage drainage dynamics

NASA Astrophysics Data System (ADS)

Rozairo, Damith; Croll, Andrew

Understanding the dynamics of the formation and drainage of the thin fluid film that becomes trapped by a deformable droplet as it approaches another object is crucial to the advancement of many industrial and biomedical applications. Adding amphiphilic diblock copolymers, which are becoming more commonly used in drug delivery and oil recovery, only add to the complexity. Despite their increased use, little is known about how long polymer chains fill an emulsion drop's interface or how the molecules influence hydrodynamic processes. We study the drainage dynamics of a thin water film trapped between mica and a diblock copolymer saturated oil droplet. Specifically, we examine several different polystyrene-b-poly(ethylene oxide) (PS-PEO) molecules self-assembled at a toluene-water interface using laser scanning confocal microscopy. Our experiments reveal that the molecular details of the polymer chains deeply influence the drainage times, indicating that they are not acting as a 'simple' surfactant. The presence of the chains creates a much slower dynamic as fluid is forced to drain through an effective polymer brush, the brush itself determined by chain packing at the interface. We present a simple model which accounts for the basic physics of the interface.

Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique

NASA Astrophysics Data System (ADS)

Ling, C. C.; Shek, Y. F.; Huang, A. P.; Fung, S.; Beling, C. D.

1999-02-01

Positron-lifetime spectroscopy has been used to investigate the electric-field distribution occurring at the Au-semi-insulating GaAs interface. Positrons implanted from a 22Na source and drifted back to the interface are detected through their characteristic lifetime at interface traps. The relative intensity of this fraction of interface-trapped positrons reveals that the field strength in the depletion region saturates at applied biases above 50 V, an observation that cannot be reconciled with a simple depletion approximation model. The data, are, however, shown to be fully consistent with recent direct electric-field measurements and the theoretical model proposed by McGregor et al. [J. Appl. Phys. 75, 7910 (1994)] of an enhanced EL2+ electron-capture cross section above a critical electric field that causes a dramatic reduction of the depletion region's net charge density. Two theoretically derived electric field profiles, together with an experimentally based profile, are used to estimate a positron mobility of ~95+/-35 cm2 V-1 s-1 under the saturation field. This value is higher than previous experiments would suggest, and reasons for this effect are discussed.

Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices

NASA Astrophysics Data System (ADS)

Jang, Jun Tae; Ko, Daehyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Yu, Hye Ri; Ahn, Geumho; Jung, Haesun; Rhee, Jihyun; Lee, Heesung; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan

2018-02-01

In this study, we investigated how the structure and oxygen flow rate (OFR) during the sputter-deposition affects the photo-responses of amorphous indium-gallium-zinc-oxide (a-IGZO)-based photodetector devices. As the result of comparing three types of device structures with one another, which are a global Schottky diode, local Schottky diode, and thin-film transistor (TFT), the IGZO TFT with the gate pulse technique suppressing the persistent photoconductivity (PPC) is the most promising photodetector in terms of a high photo-sensitivity and uniform sensing characteristic. In order to analyze the IGZO TFT-based photodetectors more quantitatively, the time-evolution of sub-gap density-of-states (DOS) was directly observed under photo-illumination and consecutively during the PPC-compensating period with applying the gate pulse. It shows that the increased ionized oxygen vacancy (VO2+) defects under photo-illumination was fully recovered by the positive gate pulse and even overcompensated by additional electron trapping. Based on experimentally extracted sub-gap DOS, the origin on PPC was successfully decomposed into the hole trapping and the VO ionization. Although the VO ionization is enhanced in lower OFR (O-poor) device, the PPC becomes more severe in high OFR (O-rich) device because the hole trapping dominates the PPC in IGZO TFT under photo-illumination rather than the VO ionization and more abundant holes are trapped into gate insulator and/or interface in O-rich TFTs. Similarly, the electron trapping during the PPC-compensating period with applying the positive gate pulse becomes more prominent in O-rich TFTs. It is attributed to more hole/electron traps in the gate insulator and/or interface, which is associated with oxygen interstitials, or originates from the ion bombardment-related lower quality gate oxide in O-rich devices.

Role of Hole Trap Sites in MoS2 for Inconsistency in Optical and Electrical Phenomena.

PubMed

Tran, Minh Dao; Kim, Ji-Hee; Kim, Hyun; Doan, Manh Ha; Duong, Dinh Loc; Lee, Young Hee

2018-03-28

Because of strong Coulomb interaction in two-dimensional van der Waals-layered materials, the trap charges at the interface strongly influence the scattering of the majority carriers and thus often degrade their electrical properties. However, the photogenerated minority carriers can be trapped at the interface, modulate the electron-hole recombination, and eventually influence the optical properties. In this study, we report the role of the hole trap sites on the inconsistency in the electrical and optical phenomena between two systems with different interfacial trap densities, which are monolayer MoS 2 -based field-effect transistors (FETs) on hexagonal boron nitride (h-BN) and SiO 2 substrates. Electronic transport measurements indicate that the use of h-BN as a gate insulator can induce a higher n-doping concentration of the monolayer MoS 2 by suppressing the free-electron transfer from the intrinsically n-doped MoS 2 to the SiO 2 gate insulator. Nevertheless, optical measurements show that the electron concentration in MoS 2 /SiO 2 is heavier than that in MoS 2 /h-BN, manifested by the relative red shift of the A 1g Raman peak. The inconsistency in the evaluation of the electron concentration in MoS 2 by electrical and optical measurements is explained by the trapping of the photogenerated holes in the spatially modulated valence band edge of the monolayer MoS 2 caused by the local strain from the SiO 2 /Si substrate. This photoinduced electron doping in MoS 2 /SiO 2 is further confirmed by the development of the trion component in the power-dependent photoluminescence spectra and negative shift of the threshold voltage of the FET after illumination.

Generation of high charge state metal ion beams by electron cyclotron resonance heating of vacuum arc plasma in cusp trap.

PubMed

Nikolaev, A G; Savkin, K P; Oks, E M; Vizir, A V; Yushkov, G Yu; Vodopyanov, A V; Izotov, I V; Mansfeld, D A

2012-02-01

A method for generating high charge state heavy metal ion beams based on high power microwave heating of vacuum arc plasma confined in a magnetic trap under electron cyclotron resonance conditions has been developed. A feature of the work described here is the use of a cusp magnetic field with inherent "minimum-B" structure as the confinement geometry, as opposed to a simple mirror device as we have reported on previously. The cusp configuration has been successfully used for microwave heating of gas discharge plasma and extraction from the plasma of highly charged, high current, gaseous ion beams. Now we use the trap for heavy metal ion beam generation. Two different approaches were used for injecting the vacuum arc metal plasma into the trap--axial injection from a miniature arc source located on-axis near the microwave window, and radial injection from sources mounted radially at the midplane of the trap. Here, we describe preliminary results of heating vacuum arc plasma in a cusp magnetic trap by pulsed (400 μs) high power (up to 100 kW) microwave radiation at 37.5 GHz for the generation of highly charged heavy metal ion beams.

Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

NASA Astrophysics Data System (ADS)

Li, Ying; Niu, Guofu; Cressler, J. D.; Patel, J.; Marshall, C. J.; Marshall, P. W.; Kim, H. S.; Reed, R. A.; Palmer, M. J.

2001-12-01

We investigate the proton tolerance of fully depleted silicon-on-insulator (SOI) MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear I/sub D/-V/sub GS/ characteristics of the fully depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface during irradiation. Extensive two-dimensional simulations with MEDICI were used to understand the physical origin of this kink. We also report unusual self-annealing effects in the devices when they are cooled to liquid nitrogen temperature.

Conditions for order and chaos in the dynamics of a trapped Bose-Einstein condensate in coordinate and energy space

NASA Astrophysics Data System (ADS)

Sakhel, Roger R.; Sakhel, Asaad R.; Ghassib, Humam B.; Balaz, Antun

2016-03-01

We investigate numerically conditions for order and chaos in the dynamics of an interacting Bose-Einstein condensate (BEC) confined by an external trap cut off by a hard-wall box potential. The BEC is stirred by a laser to induce excitations manifesting as irregular spatial and energy oscillations of the trapped cloud. Adding laser stirring to the external trap results in an effective time-varying trapping frequency in connection with the dynamically changing combined external+laser potential trap. The resulting dynamics are analyzed by plotting their trajectories in coordinate phase space and in energy space. The Lyapunov exponents are computed to confirm the existence of chaos in the latter space. Quantum effects and trap anharmonicity are demonstrated to generate chaos in energy space, thus confirming its presence and implicating either quantum effects or trap anharmonicity as its generator. The presence of chaos in energy space does not necessarily translate into chaos in coordinate space. In general, a dynamic trapping frequency is found to promote chaos in a trapped BEC. An apparent means to suppress chaos in a trapped BEC is achieved by increasing the characteristic scale of the external trap with respect to the condensate size.

Counting ions and other nucleophiles at surfaces by chemical trapping.

PubMed

Cuccovia, Iolanda Midea; da Silva Lima, Filipe; Chaimovich, Hernan

2017-10-01

The interfaces of membranes and other aggregates are determined by the polarity, electrical charge, molecular volume, degrees of motional freedom and packing density of the head groups of the amphiphiles. These properties also determine the type of bound ion (ion selectivity) and its local density, i.e. concentration defined by choosing an appropriate volume element at the aggregate interface. Bulk and local ion concentrations can differ by orders of magnitude. The relationships between ion (or other compound) concentrations in the bulk solvent and in the interface are complex but, in some cases, well established. As the local ion concentration, rather than that in the bulk, controls a variety of properties of membranes, micelles, vesicles and other objects of theoretical and applied interests, measurement of local (interfacial, bound) ion concentrations is of relevance for understanding and characterizing such aggregates. Many experimental methods for estimating ion distributions between the bulk solution and the interface provide indirect estimates because they are based on concentration-dependent properties, rather than concentration measurements. Dediazoniation, i.e. the loss of N 2 , of a substituted diazophenyl derivative provides a tool for determining the number of nucleophiles (including neutral or negatively charged ions) surrounding the diazophenyl derivative prior to the dediazoniation event. This reaction, defined as chemical trapping, and the appropriate reference points obtained in bulk solution allow direct measurements of local concentrations of a variety of nucleophiles at the surface of membranes and other aggregates. Here we review our contributions of our research group to the use, and understanding, of this method and applications of chemical trapping to the description of local concentrations of ions and other nucleophiles in micelles, reverse micelles, vesicles and solvent mixtures. Among other results, we have shown that interfacial water determines micellar shape, zwitterionic vesicle-forming amphiphiles display ion selectivity and urea does not accumulate at micellar interfaces. We have also shown that reaction products can be predicted from the composition of the initial state, even in non-ideal solvent mixtures, supporting the usefulness of chemical trapping as a method to determine local concentrations. In addition, we have analysed the mechanism of dediazoniation, both on theoretical and experimental basis, and concluded that the formation of a free phenyl cation is not a necessary part of the reaction pathway.

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

PubMed Central

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-01-01

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices. PMID:27829663

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

NASA Astrophysics Data System (ADS)

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-01

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

PubMed

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-10

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Transient luminescence induced by electrical refilling of charge carrier traps of dislocation network at hydrophilically bonded Si wafers interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bondarenko, Anton; Vyvenko, Oleg

2014-02-21

Dislocation network (DN) at hydrophilically bonded Si wafers interface is placed in space charge region (SCR) of a Schottky diode at a depth of about 150 nm from Schottky electrode for simultaneous investigation of its electrical and luminescent properties. Our recently proposed pulsed traps refilling enhanced luminescence (Pulsed-TREL) technique based on the effect of transient luminescence induced by refilling of charge carrier traps with electrical pulses is further developed and used as a tool to establish DN energy levels responsible for D1 band of dislocation-related luminescence in Si (DRL). In present work we do theoretical analysis and simulation of trapsmore » refilling kinetics dependence on refilling pulse magnitude (Vp) in two levels model: shallow and deep. The influence of initial charge state of deep level on shallow level occupation-Vp dependence is discussed. Characteristic features predicted by simulations are used for Pulsed-TREL experimental results interpretation. We conclude that only shallow (∼0.1 eV from conduction and valence band) energetic levels in the band gap participate in D1 DRL.« less

Traps and Interface Fixed Charge Effects on a Solution-Processed n-Type Polymeric-Based Organic Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Hafsi, B.; Boubaker, A.; Guerin, D.; Lenfant, S.; Kalboussi, A.; Lmimouni, K.

2017-02-01

Organic field-effect transistors based on poly{[ N, N0- bis(2-octyldodecyl)- naphthalene-1,4,5,8- bis(dicarboximide)-2,6-diyl]-alt-5,50-(2,20-bithiophene)}, [P(NDI2OD-T2)n], were fabricated and characterized. The effect of octadecyltrichlorosilane (OTS) a self-assembled monolayer (SAM) grafted on to a SiO2 gate dielectric was investigated. A significant improvement of the charge mobility ( μ), up to 0.22 cm2/V s, was reached thanks to the OTS treatment. Modifying some technological parameters relating to fabrication, such as solvents, was also studied. We have analyzed the electrical properties of these thin-film transistors by using a two-dimensional drift-diffusion simulator, Integrated System Engineering-Technology Computer Aided Design (ISE-TCAD®). We studied the fixed surface charges at the organic semiconductor/oxide interface and the bulk traps effect. The dependence of the threshold voltage on the density and energy level of the trap states has also been considered. We finally found a good agreement between the output and transfer characteristics for experimental and simulated data.

Two dimensional simulation of patternable conducting polymer electrode based organic thin film transistor

NASA Astrophysics Data System (ADS)

Nair, Shiny; Kathiresan, M.; Mukundan, T.

2018-02-01

Device characteristics of organic thin film transistor (OTFT) fabricated with conducting polyaniline:polystyrene sulphonic acid (PANi-PSS) electrodes, patterned by the Parylene lift-off method are systematically analyzed by way of two dimensional numerical simulation. The device simulation was performed taking into account field-dependent mobility, low mobility layer at the electrode-semiconductor interface, trap distribution in pentacene film and trapped charge at the organic/insulator interface. The electrical characteristics of bottom contact thin film transistor with PANi-PSS electrodes and pentacene active material is superior to those with palladium electrodes due to a lower charge injection barrier. Contact resistance was extracted in both cases by the transfer line method (TLM). The extracted charge concentration and potential profile from the two dimensional numerical simulation was used to explain the observed electrical characteristics. The simulated device characteristics not only matched the experimental electrical characteristics, but also gave an insight on the charge injection, transport and trap properties of the OTFTs as a function of different electrode materials from the perspectives of transistor operation.

Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

PubMed

Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

2018-05-09

Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

Observation of interface defects in thermally oxidized SiC using positron annihilation

NASA Astrophysics Data System (ADS)

Dekker, James; Saarinen, Kimmo; Ólafsson, Halldór; Sveinbjörnsson, Einar Ö.

2003-03-01

Positron annihilation has been applied to study thermally oxidized 4H- and 6H-SiC. The SiC/SiO2 interface is found to contain a high density of open-volume defects. The positron trapping at the interface defects correlates with the charge of the interface determined by capacitance-voltage experiments. For oxides grown on n-SiC substrates, the positron annihilation characteristics at these defects are nearly indistinguishable from those of a silicon/oxide interface, with no discernable contribution from C-related bonds or carbon clusters. These results indicate that those defects at the SiC/oxide interface, which are visible to positrons, are similar to those at the Si/oxide interface. The positron annihilation characteristics suggest that these defects are vacancies surrounded by oxygen atoms.

Evidence for charge-trapping inducing polymorphic structural-phase transition in pentacene.

PubMed

Ando, Masahiko; Kehoe, Tom B; Yoneya, Makoto; Ishii, Hiroyuki; Kawasaki, Masahiro; Duffy, Claudia M; Minakata, Takashi; Phillips, Richard T; Sirringhaus, Henning

2015-01-07

Trapped-charge-induced transformation of pentacene polymorphs is observed by using in situ Raman spectroscopy and molecular dynamics simulations reveal that the charge should be localized in pentacene molecules at the interface with static intermolecular disorder along the long axis. Quantum chemical calculations of the intermolecular transfer integrals suggest the disorder to be large enough to induce Anderson-type localization. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Koteswara Rao, K. S. R.

2018-02-01

In this work, we have fabricated low-temperature sol-gel spin-coated and oxygen (O2) plasma treated ZrO2 thin film-based metal-insulator-semiconductor devices. To understand the impact of plasma treatment on the Si/ZrO2 interface, deep level transient spectroscopy measurements were performed. It is reported that the interface state density ( D it) comes down to 7.1 × 1010 eV-1 cm-2 from 4 × 1011 eV-1 cm-2, after plasma treatment. The reduction in D it is around five times and can be attributed to the passivation of oxygen vacancies near the Si/ZrO2 interface, as they try to relocate near the interface. The energy level position ( E T) of interfacial traps is estimated to be 0.36 eV below the conduction band edge. The untreated ZrO2 film displayed poor leakage behavior due to the presence of several traps within the film and at the interface; O2 plasma treated films show improved leakage current density as they have been reduced from 5.4 × 10-8 A/cm2 to 1.98 × 10-9 A/cm2 for gate injection mode and 6.4 × 10-8 A/cm2 to 6.3 × 10-10 A/cm2 for substrate injection mode at 1 V. Hence, we suggest that plasma treatment might be useful in future device fabrication technology.

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

NASA Astrophysics Data System (ADS)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

Aerosol Particle Interfacial Thermodynamics and Phase Partitioning Measurements Using Biphasic Microfluidics

NASA Astrophysics Data System (ADS)

Dutcher, Cari; Metcalf, Andrew

2015-03-01

Secondary organic aerosol particles are nearly ubiquitous in the atmosphere and yet there remain large uncertainties in their formation processes and ambient properties. These particles are complex microenvironments, which can contain multiple interfaces due to internal aqueous-organic phase partitioning and to the external liquid-vapor surface. Interfacial properties affect the ambient aerosol morphology, or internal structure of the particle, which in turn can affect the way a particle interacts with an environment of condensable clusters and organic vapors. To improve our ability to accurately predict ambient aerosol morphology, we must improve our knowledge of aerosol interfaces and their interactions with the ambient environment. Unfortunately, many techniques employed to measure interfacial properties do so in bulk solutions or in the presence of a ternary (e.g. solid) phase. In this talk, a novel method using biphasic microscale flows will be introduced for generating, trapping, and perturbing complex interfaces at atmospherically relevant conditions. These microfluidic experiments utilize high-speed imaging to monitor interfacial phenomena at the microscale and are performed with phase contrast and fluorescence microscopy on a temperature-controlled inverted microscope stage. From these experiments, interfacial thermodynamic properties such as surface or interfacial tension, rheological properties such as interfacial moduli, and kinetic properties such as mass transfer coefficients can be measured or inferred.

Germanium MOS capacitors grown on Silicon using low temperature RF-PECVD

NASA Astrophysics Data System (ADS)

Dushaq, Ghada; Rasras, Mahmoud; Nayfeh, Ammar

2017-10-01

In this paper, Ge metal-oxide-semiconductor capacitors (MOSCAPs) are fabricated on Si using a low temperature two-step deposition technique by radio frequency plasma enhanced chemical vapor deposition. The MOSCAP gate stack consists of atomic layer deposition of Al2O3 as the gate oxide and a Ti/Al metal gate electrode. The electrical characteristics of 9 nm Al2O3/i-Ge/Si MOSCAPs exhibit an n-type (p-channel) behavior and normal high frequency C-V responses. In addition to CV measurements, the gate leakage versus the applied voltage is measured and discussed. Moreover, the electrical behavior is discussed in terms of the material and interface quality. The Ge/high-k interface trap density versus the surface potential is extracted using the most commonly used methods in detemining the interface traps based on the capacitance-voltage (C-V) curves. The discussion included the Dit calculation from the conductance method, the high-low frequency (Castagné-Vapaille) method, and the Terman (high-frequency) method. Furthermore, the origins of the discrepancies in the interface trap densities determined from the different methods are discussed. The study of the post annealed Ge layers at different temperatures in H2 and N2 gas ambient revealed an improved electrical and transport properties of the films treated at T  <  600 °C. Also, samples annealed at  <550 °C show the lowest threading dislocation density of ~1  ×  106 cm-2. The low temperature processing of Ge/Si demonstrates a great potential for p-channel transistor applications in a monolithically integrated CMOS platform.

Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

NASA Astrophysics Data System (ADS)

Han, Jinhua; Wang, Wei; Ying, Jun; Xie, Wenfa

2014-01-01

An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

Quantum confinement of exciton-polaritons in a structured (Al,Ga)As microcavity

NASA Astrophysics Data System (ADS)

Kuznetsov, Alexander S.; Helgers, Paul L. J.; Biermann, Klaus; Santos, Paulo V.

2018-05-01

The realization of quantum functionalities with polaritons in an all-semiconductor platform requires the control of the energy and spatial overlap of the wave functions of single polaritons trapped in potentials with precisely controlled shape and size. In this study we reach the confinement of microcavity polaritons in traps with an effective potential width down to 1 µm, produced by patterning the active region of the (Al,Ga)As microcavity between two molecular beam epitaxy growth runs. We correlate spectroscopic and structural data to show that the smooth surface relief of the patterned traps translates into a graded confinement potential characterized by lateral interfaces with a finite lateral width. We show that the structuring method is suitable for the fabrication of arrays of proximal traps, supporting hybridization between adjacent lattice sites.

FTIR gas chromatographic analysis of perfumes

NASA Astrophysics Data System (ADS)

Diederich, H.; Stout, Phillip J.; Hill, Stephen L.; Krishnan, K.

1992-03-01

Perfumes, natural or synthetic, are complex mixtures consisting of numerous components. Gas chromatography (GC) and gas chromatography-mass spectrometry (GC-MS) techniques have been extensively utilized for the analysis of perfumes and essential oils. A limited number of perfume samples have also been analyzed by FT-IR gas chromatographic (GC-FTIR) techniques. Most of the latter studies have been performed using the conventional light pipe (LP) based GC-FTIR systems. In recent years, cold-trapping (in a matrix or neat) GC-FTIR systems have become available. The cold-trapping systems are capable of sub-nanogram sensitivities. In this paper, comparison data between the LP and the neat cold-trapping GC- FTIR systems is presented. The neat cold-trapping interface is known as Tracer. The results of GC-FTIR analysis of some commercial perfumes is also presented. For comparison of LP and Tracer GC-FTIR systems, a reference (synthetic) mixture containing 16 major and numerous minor constituents was used. The components of the mixture are the compounds commonly encountered in commercial perfumes. The GC-FTIR spectra of the reference mixture was obtained under identical chromatographic conditions from an LP and a Tracer system. A comparison of the two sets of data thus generated do indeed show the enhanced sensitivity level of the Tracer system. The comparison also shows that some of the major components detected by the Tracer system were absent from the LP data. Closer examination reveals that these compounds undergo thermal decomposition on contact with the hot gold surface that is part of the LP system. GC-FTIR data were obtained for three commercial perfume samples. The major components of these samples could easily be identified by spectra search against a digitized spectral library created using the Tracer data from the reference mixture.

Designing High-Efficiency Thin Silicon Solar Cells Using Parabolic-Pore Photonic Crystals

NASA Astrophysics Data System (ADS)

Bhattacharya, Sayak; John, Sajeev

2018-04-01

We demonstrate the efficacy of wave-interference-based light trapping and carrier transport in parabolic-pore photonic-crystal, thin-crystalline silicon (c -Si) solar cells to achieve above 29% power conversion efficiencies. Using a rigorous solution of Maxwell's equations through a standard finite-difference time domain scheme, we optimize the design of the vertical-parabolic-pore photonic crystal (PhC) on a 10 -μ m -thick c -Si solar cell to obtain a maximum achievable photocurrent density (MAPD) of 40.6 mA /cm2 beyond the ray-optical, Lambertian light-trapping limit. For a slanted-parabolic-pore PhC that breaks x -y symmetry, improved light trapping occurs due to better coupling into parallel-to-interface refraction modes. We achieve the optimum MAPD of 41.6 mA /cm2 for a tilt angle of 10° with respect to the vertical axis of the pores. This MAPD is further improved to 41.72 mA /cm2 by introducing a 75-nm SiO2 antireflective coating on top of the solar cell. We use this MAPD and the associated charge-carrier generation profile as input for a numerical solution of Poisson's equation coupled with semiconductor drift-diffusion equations using a Shockley-Read-Hall and Auger recombination model. Using experimentally achieved surface recombination velocities of 10 cm /s , we identify semiconductor doping profiles that yield power conversion efficiencies over 29%. Practical considerations of additional upper-contact losses suggest efficiencies close to 28%. This improvement beyond the current world record is largely due to an open-circuit voltage approaching 0.8 V enabled by reduced bulk recombination in our thin silicon architecture while maintaining a high short-circuit current through wave-interference-based light trapping.

Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors

NASA Astrophysics Data System (ADS)

Long, Pengyu; Huang, Jun Z.; Povolotskyi, Michael; Sarangapani, Prasad; Valencia-Zapata, Gustavo A.; Kubis, Tillmann; Rodwell, Mark J. W.; Klimeck, Gerhard

2018-05-01

Tunnel Field Effect Transistors (FETs) have the potential to achieve steep Subthreshold Swing (S.S.) below 60 mV/dec, but their S.S. could be limited by trap-assisted tunneling (TAT) due to interface traps. In this paper, the effect of trap energy and location on OFF-current (IOFF) of tunnel FETs is evaluated systematically using an atomistic trap level representation in a full quantum transport simulation. Trap energy levels close to band edges cause the highest leakage. Wave function penetration into the surrounding oxide increases the TAT current. To estimate the effects of multiple traps, we assume that the traps themselves do not interact with each other and as a whole do not modify the electrostatic potential dramatically. Within that model limitation, this numerical metrology study points to the critical importance of TAT in the IOFF in tunnel FETs. The model shows that for Dit higher than 1012/(cm2 eV) IO F F is critically increased with a degraded IO N/IO F F ratio of the tunnel FET. In order to have an IO N/IO F F ratio higher than 104, the acceptable Dit near Ev should be controlled to no larger than 1012/(cm2 eV) .

Note: Toward multiple addressable optical trapping

PubMed Central

Faustov, Alexei R.; Webb, Michael R.; Walt, David R.

2010-01-01

We describe a setup for addressable optical trapping in which a laser source is focused on a digital micromirror device and generates an optical trap in a microfluidic cell. In this paper, we report a proof-of-principle single beam∕single micromirror∕single three-dimensional trap arrangement that should serve as the basis for a multiple-trap instrument. PMID:20192526

Analysis of the PEDOT:PSS/Si nanowire hybrid solar cell with a tail state model

NASA Astrophysics Data System (ADS)

Ho, Kuan-Ying; Li, Chi-Kang; Syu, Hong-Jhang; Lai, Yi; Lin, Ching-Fuh; Wu, Yuh-Renn

2016-12-01

In this paper, the electrical properties of the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)/silicon nanowire hybrid solar cell have been analyzed and an optimized structure is proposed. In addition, the planar PEDOT:PSS/c-Si hybrid solar cell is also modeled for comparison. We first developed a simulation software which is capable of modeling organic/inorganic hybrid solar cells by including Gaussian shape density of states into Poisson and drift-diffusion solver to present the tail states and trap states in the organic material. Therefore, the model can handle carrier transport, generation, and recombination in both organic and inorganic materials. Our results show that at the applied voltage near open-circuit voltage (Voc), the recombination rate becomes much higher at the PEDOT:PSS/Si interface region, which limits the fill factor and Voc. Hence, a modified structure with a p-type amorphous silicon (a-Si) layer attached on the interface of Si layer and an n+-type Si layer inserted near the bottom contact are proposed. The highest conversion efficiency of 16.10% can be achieved if both structures are applied.

Fast modeling of flux trapping cascaded explosively driven magnetic flux compression generators.

PubMed

Wang, Yuwei; Zhang, Jiande; Chen, Dongqun; Cao, Shengguang; Li, Da; Liu, Chebo

2013-01-01

To predict the performance of flux trapping cascaded flux compression generators, a calculation model based on an equivalent circuit is investigated. The system circuit is analyzed according to its operation characteristics in different steps. Flux conservation coefficients are added to the driving terms of circuit differential equations to account for intrinsic flux losses. To calculate the currents in the circuit by solving the circuit equations, a simple zero-dimensional model is used to calculate the time-varying inductance and dc resistance of the generator. Then a fast computer code is programmed based on this calculation model. As an example, a two-staged flux trapping generator is simulated by using this computer code. Good agreements are achieved by comparing the simulation results with the measurements. Furthermore, it is obvious that this fast calculation model can be easily applied to predict performances of other flux trapping cascaded flux compression generators with complex structures such as conical stator or conical armature sections and so on for design purpose.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin

In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a modelmore » taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.« less

In-line charge-trapping characterization of dielectrics for sub-0.5-um CMOS technologies

NASA Astrophysics Data System (ADS)

Roy, Pradip K.; Chacon, Carlos M.; Ma, Yi; Horner, Gregory

1997-09-01

The advent of ultra-large and giga-scale-integration (ULSI/GSI) has placed considerable emphasis on the development of new gate oxides and interlevel dielectrics capable of meeting strict performance and reliability requirements. The costs and demands associated with ULSI fabrication have in turn fueled the need for cost-effective, rapid and accurate in-line characterization techniques for evaluating dielectric quality. The use of non-contact surface photovoltage characterization techniques provides cost-effective rapid feedback on dielectric quality, reducing costs through the reutilization of control wafers and the elimination of processing time. This technology has been applied to characterize most of the relevant C-V parameters, including flatband voltage (Vfb), density of interface traps (Dit), mobile charge density (Qm), oxide thickness (Tox), oxide resistivity (pox) and total charge (Qtot) for gate and interlevel (ILO) oxides. A novel method of measuring tunneling voltage by this technique on various gate oxides is discussed. For ILO, PECVD and high density plasma dielectrics, surface voltage maps are also presented. Measurements of near-surface silicon quality are described, including minority carrier generation lifetime, and examples of their application in diagnosing manufacturing problems.

A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Jana, Dipankar; Sharma, T. K.

2017-07-01

AlGaN/GaN heterostructures are investigated by performing complementary spectroscopic measurements under novel experimental configurations. Distinct features related to the band edge of AlGaN and GaN layers are clearly observed in surface photovoltage spectroscopy (SPS) spectra. A few more SPS features, which are associated with defects in GaN, are also identified by performing the pump-probe SPS measurements. SPS results are strongly corroborated by the complementary photoluminescence and photoluminescence excitation (PLE) measurements. A correlation between the defect assisted SPS features and yellow luminescence (YL) peak is established by performing pump-probe SPS and PLE measurements. It is found that CN-ON donor complex is responsible for the generation of YL peak in our sample. Further, the deep trap states are found to be present throughout the entire GaN epilayer. It is also noticed that the deep trap states lying at the GaN/Fe-GaN interface make a strong contribution to the YL feature. A phenomenological model is proposed to explain the intensity dependence of the YL feature and the corresponding SPS features in a pump-probe configuration, where a reasonable agreement between the numerical simulations and experimental results is achieved.

Capillary zone electrophoresis for analysis of complex proteomes using an electrokinetically pumped sheath flow nanospray interface

PubMed Central

Sun, Liangliang; Zhu, Guijie; Yan, Xiaojing; Champion, Mathew M.

2014-01-01

The vast majority of proteomic studies employ reversed-phase high-performance liquid chromatography coupled with tandem mass spectrometry for analysis of the tryptic digest of a cellular lysate. This technology is quite mature, and typically provides identification of hundreds to thousands of peptides, which is used to infer the identity of hundreds to thousands of proteins. These approaches usually require milligrams to micrograms of starting material. Capillary zone electrophoresis provides an interesting alternative separation method based on a different separation mechanism than HPLC. Capillary electrophoresis received some attention for protein analysis beginning 25 years ago. Those efforts stalled because of the limited performance of the electrospray interfaces and the limited speed and sensitivity of mass spectrometers of that era. This review considers a new electrospray interface design coupled with Orbitrap Velos and linear Q-trap mass spectrometers. Capillary zone electrophoresis coupled with this interface and these detectors provides single shot detection of >1,250 peptides from an E. coli digest in less than one hour, identification of nearly 5,000 peptides from analysis of seven fractions produced by solid-phase extraction of the E. coli digest in a six hour total analysis time, low attomole detection limits for peptides generated from standard proteins, and high zeptomole detection limits for selected ion monitoring of peptides. Incorporation of an integrated on-line immobilized trypsin microreactor allows digestion and analysis of picogram amounts of a complex eukaryotic proteome. PMID:24277677

Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage

NASA Astrophysics Data System (ADS)

Patrick, Erin; Law, Mark E.; Liu, Lu; Cuervo, Camilo Velez; Xi, Yuyin; Ren, Fan; Pearton, Stephen J.

2013-12-01

A combination of TRIM and FLOODS models the effect of radiation damage on AlGaN/GaN HEMTs. While excellent fits are obtained for threshold voltage shift, the models do not fully explain the increased reliability observed experimentally. In short, the addition of negatively-charged traps in the GaN buffer layer does not significantly change the electric field at the gate edges at radiation fluence levels seen in this study. We propose that negative trapped charge at the nitride/AlGaN interface actually produces the virtual-gate effect that results in decreasing the magnitude of the electric field at the gate edges and thus the increase in critical voltage. Simulation results including nitride interface charge show significant changes in electric field profiles while the I-V device characteristics do not change.

Protection layers on a superconducting microwave resonator toward a hybrid quantum system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jongmin, E-mail: jongmin.lee@sandia.gov; Sandia National Laboratories, Albuquerque, New Mexico 87123; Park, Dong Hun, E-mail: leomac@umd.edu

2015-10-07

We propose a protection scheme of a superconducting microwave resonator to realize a hybrid quantum system, where cold neutral atoms are coupled with a single microwave photon through magnetic dipole interaction at an interface inductor. The evanescent field atom trap, such as a waveguide/nanofiber atom trap, brings both surface-scattered photons and absorption-induced broadband blackbody radiation which result in quasiparticles and a low quality factor at the resonator. A proposed multiband protection layer consists of pairs of two dielectric layers and a thin nanogrid conductive dielectric layer above the interface inductor. We show numerical simulations of quality factors and reflection/absorption spectra,more » indicating that the proposed multilayer structure can protect a lumped-element microwave resonator from optical photons and blackbody radiation while maintaining a reasonably high quality factor.« less

Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing

NASA Astrophysics Data System (ADS)

Park, Hokyung; Choi, Rino; Lee, Byoung Hun; Hwang, Hyunsang

2007-09-01

High pressure deuterium annealing on the hot carrier reliability characteristics of HfSiO metal oxide semiconductor field effect transistor (MOSFET) was investigated. Comparing with the conventional forming gas (H2/Ar=10%/96%, 480 °C, 30 min) annealed sample, MOSFET annealed in 5 atm pure deuterium ambient at 400 °C showed the improvement of linear drain current, reduction of interface trap density, and improvement of the hot carrier reliability characteristics. These improvements can be attributed to the effective passivation of the interface trap site after high pressure annealing and heavy mass effect of deuterium. These results indicate that high pressure pure deuterium annealing can be a promising process for improving device performance as well as hot carrier reliability, together.

Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2018-02-01

Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via

NASA Astrophysics Data System (ADS)

Li, Yunlong; Suhard, Samuel; Van Huylenbroeck, Stefaan; Meersschaut, Johan; Van Besien, Els; Stucchi, Michele; Croes, Kristof; Beyer, Gerald; Beyne, Eric

2017-12-01

A Through Silicon Via (TSV) is a key component for 3D integrated circuit stacking technology, and the diameter of a TSV keeps scaling down to reduce the footprint in silicon. The TSV aspect ratio, defined as the TSV depth/diameter, tends to increase consequently. Starting from the aspect ratio of 10, to improve the TSV sidewall coverage and reduce the process thermal budget, the TSV dielectric liner deposition process has evolved from sub-atmospheric chemical vapour deposition to plasma-enhanced atomic layer deposition (PE-ALD). However, with this change, a strong negative shift in the flatband voltage is observed in the capacitance-voltage characteristic of the vertical metal-oxide-semiconductor (MOS) parasitic capacitor formed between the TSV copper metal and the p-Si substrate. And, no shift is present in planar MOS capacitors manufactured with the same PE-ALD oxide. By comparing the integration process of these two MOS capacitor structures, and by using Elastic Recoil Detection to study the elemental composition of our films, it is found that the origin of the negative flatband voltage shift is the positive charge trapping at the Si/SiO2 interface, due to the positive PE-ALD reactants confined to the narrow cavity of high aspect ratio TSVs. This interface charge trapping effect can be effectively mitigated by high temperature annealing. However, this is limited in the real process due to the high thermal budget. Further investigation on liner oxide process optimization is needed.

Simultaneous achiral-chiral analysis of pharmaceutical compounds using two-dimensional reversed phase liquid chromatography-supercritical fluid chromatography.

PubMed

Venkatramani, C J; Al-Sayah, Mohammad; Li, Guannan; Goel, Meenakshi; Girotti, James; Zang, Lisa; Wigman, Larry; Yehl, Peter; Chetwyn, Nik

2016-02-01

A new interface was designed to enable the coupling of reversed phase liquid chromatography (RPLC) and supercritical fluid chromatography (SFC). This online two-dimensional chromatographic system utilizing RPLC in the first dimension and SFC in the second was developed to achieve simultaneous achiral and chiral analysis of pharmaceutical compounds. The interface consists of an eight-port, dual-position switching valve with small volume C-18 trapping columns. The peaks of interest eluting from the first RPLC dimension column were effectively focused as sharp concentration pulses on small volume C-18 trapping column/s and then injected onto the second dimension SFC column. The first dimension RPLC separation provides the achiral purity result, and the second dimension SFC separation provides the chiral purity result (enantiomeric excess). The results are quantitative enabling simultaneous achiral, chiral analysis of compounds. The interface design and proof of concept demonstration are presented. Additionally, comparative studies to conventional SFC and case studies of the applications of 2D LC-SFC in pharmaceutical analysis is presented. Copyright © 2015 Elsevier B.V. All rights reserved.

Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

NASA Astrophysics Data System (ADS)

Hsu, Sheng-Chia; Li, Yiming

2014-11-01

In this work, we study the impact of random interface traps (RITs) at the interface of SiO x /Si on the electrical characteristic of 16-nm-gate high-κ/metal gate (HKMG) bulk fin-type field effect transistor (FinFET) devices. Under the same threshold voltage, the effects of RIT position and number on the degradation of electrical characteristics are clarified with respect to different levels of RIT density of state ( D it). The variability of the off-state current ( I off) and drain-induced barrier lowering (DIBL) will be severely affected by RITs with high D it varying from 5 × 1012 to 5 × 1013 eV-1 cm-2 owing to significant threshold voltage ( V th) fluctuation. The results of this study indicate that if the level of D it is lower than 1 × 1012 eV-1 cm-2, the normalized variability of the on-state current, I off, V th, DIBL, and subthreshold swing is within 5%.

Three-dimensional features on oscillating microbubbles streaming flows

NASA Astrophysics Data System (ADS)

Rossi, Massimiliano; Marin, Alvaro G.; Wang, Cheng; Hilgenfeldt, Sascha; Kähler, Christian J.

2013-11-01

Ultrasound-driven oscillating micro-bubbles have been used as active actuators in microfluidic devices to perform manifold tasks such as mixing, sorting and manipulation of microparticles. A common configuration consists in side-bubbles, created by trapping air pockets in blind channels perpendicular to the main channel direction. This configuration results in bubbles with a semi-cylindrical shape that creates a streaming flow generally considered quasi two-dimensional. However, recent experiments performed with three-dimensional velocimetry methods have shown how microparticles can present significant three-dimensional trajectories, especially in regions close to the bubble interface. Several reasons will be discussed such as boundary effects of the bottom/top wall, deformation of the bubble interface leading to more complex vibrational modes, or bubble-particle interactions. In the present investigation, precise measurements of particle trajectories close to the bubble interface will be performed by means of 3D Astigmatic Particle Tracking Velocimetry. The results will allow us to characterize quantitatively the three-dimensional features of the streaming flow and to estimate its implications in practical applications as particle trapping, sorting or mixing.

TRAP: automated classification, quantification and annotation of tandemly repeated sequences.

PubMed

Sobreira, Tiago José P; Durham, Alan M; Gruber, Arthur

2006-02-01

TRAP, the Tandem Repeats Analysis Program, is a Perl program that provides a unified set of analyses for the selection, classification, quantification and automated annotation of tandemly repeated sequences. TRAP uses the results of the Tandem Repeats Finder program to perform a global analysis of the satellite content of DNA sequences, permitting researchers to easily assess the tandem repeat content for both individual sequences and whole genomes. The results can be generated in convenient formats such as HTML and comma-separated values. TRAP can also be used to automatically generate annotation data in the format of feature table and GFF files.

Fastest predators in the plant kingdom: functional morphology and biomechanics of suction traps found in the largest genus of carnivorous plants

PubMed Central

Poppinga, Simon; Weisskopf, Carmen; Westermeier, Anna Sophia; Masselter, Tom; Speck, Thomas

2016-01-01

Understanding the physics of plant movements, which describe the interplay between plant architecture, movement speed and actuation principles, is essential for the comprehension of important processes like plant morphogenesis. Recent investigations especially on rapid plant movements at the interface of biology, physics and engineering sciences highlight how such fast motions can be achieved without the presence of muscles, nerves and technical hinge analogies. The suction traps (bladders) of carnivorous bladderworts (Utricularia spp., Lentibulariaceae, Lamiales) are considered as some of the most elaborate moving structures in the plant kingdom. A complex interplay of morphological and physiological adaptations allows the traps to pump water out of their body and to store elastic energy in the deformed bladder walls. Mechanical stimulation by prey entails opening of the otherwise watertight trapdoor, followed by trap wall relaxation, sucking in of water and prey, and consecutive trapdoor closure. Suction can also occur spontaneously in non-stimulated traps. We review the current state of knowledge about the suction trap mechanism with a focus on architectonically homogeneous traps of aquatic bladderwort species from section Utricularia (the so-called ‘Utricularia vulgaris trap type’). The functional morphology and biomechanics of the traps are described in detail. We discuss open questions and propose promising aspects for future studies on these sophisticated ultra-fast trapping devices. PMID:26602984

System and method for trapping and measuring a charged particle in a liquid

DOEpatents

Reed, Mark A; Krstic, Predrag S; Guan, Weihua; Zhao, Xiongce

2013-07-23

A system and method for trapping a charged particle is disclosed. A time-varying periodic multipole electric potential is generated in a trapping volume. A charged particle under the influence of the multipole electric field is confined to the trapping volume. A three electrode configuration giving rise to a 3D Paul trap and a four planar electrode configuration giving rise to a 2D Paul trap are disclosed.

System and method for trapping and measuring a charged particle in a liquid

DOEpatents

Reed, Mark A; Krstic, Predrag S; Guan, Weihua; Zhao, Xiongce

2012-10-23

A system and method for trapping a charged particle is disclosed. A time-varying periodic multipole electric potential is generated in a trapping volume. A charged particle under the influence of the multipole electric field is confined to the trapping volume. A three electrode configuration giving rise to a 3D Paul trap and a four planar electrode configuration giving rise to a 2D Paul trap are disclosed.

The Low Earth Orbit validation of a dynamic and anisotropic trapped radiation model through ISS measurements

NASA Astrophysics Data System (ADS)

Badavi, Francis F.; Nealy, John E.; Wilson, John W.

2011-10-01

The International Space Station (ISS) provides the proving ground for future long duration human activities in space. Ionizing radiation measurements in ISS form the ideal tool for the experimental validation of radiation environmental models, nuclear transport code algorithms and nuclear reaction cross sections. Indeed, prior measurements on the Space Transportation System (STS; Shuttle) have provided vital information impacting both the environmental models and the nuclear transport code development by requiring dynamic models of the Low Earth Orbit (LEO) environment. Previous studies using Computer Aided Design (CAD) models of the evolving ISS configurations with Thermo-Luminescent Detector (TLD) area monitors, demonstrated that computational dosimetry requires environmental models with accurate non-isotropic as well as dynamic behavior, detailed information on rack loading, and an accurate six degree of freedom (DOF) description of ISS trajectory and orientation. It is imperative that we understand ISS exposures dynamically for crew career planning, and insure that the regulatory requirements of keeping exposure as low as reasonably achievable (ALARA) are adequately implemented. This is especially true as ISS nears some form of completion with increasing complexity, resulting in a larger drag coefficient, and requiring operation at higher altitudes with increased exposure rates. In this paper ISS environmental model is configured for 11A (circa mid 2005), and uses non-isotropic and dynamic geomagnetic transmission and trapped proton models. ISS 11A and LEO model validations are important steps in preparation for the design and validation for the next generation manned vehicles. While the described cutoff rigidity, trapped proton and electron formalisms as coded in a package named GEORAD (GEOmagnetic RADiation) and a web interface named OLTARIS (On-line Tool for the Assessment of Radiation in Space) are applicable to the LEO, Medium Earth Orbit (MEO) and Geosynchronous Earth Orbit (GEO) at quiet solar periods, in this report, the validation of the models using available measurements are limited to STS and ISS nominal operational altitudes (300-400 km) range at LEO where the dominant fields within the vehicle are the trapped proton and attenuated Galactic Cosmic Ray (GCR) ions. The described formalism applies to trapped electron at LEO, MEO and GEO as well. Due to the scarcity of available electron measurements, the trapped electron capabilities of the GEORAD are not discussed in this report, but are accessible through OLTARIS web interface. GEORAD and OLTARIS interests are in the study of long term effects (i.e. a meaningful portion of solar cycle). Therefore, GEORAD does not incorporate any short term external field contribution due to solar activity. Finally, we apply these environmental models to selected target points within ISS 6A (circa early 2001), 7A (circa late 2001), and 11A during its passage through the South Atlantic Anomaly (SAA) to assess the validity of the environmental models at ISS altitudes.

Role of interface states on electron transport in a-Si:H/nc-Si:H multilayer structures

NASA Astrophysics Data System (ADS)

Yadav, Asha; Kumari, Juhi; Agarwal, Pratima

2018-05-01

In this paper we report, I-V characteristic of a-Si:H/nc-Si:H multilayer structures in lateral as well as transverse direction. In lateral geometry, where the interfaces are parallel to the direction of electronic transport, residual photo conductivity (persistent photoconductivity) is observed after the light was turned off. On the other hand, in transverse geometry, where interfaces are along the direction of electronic transport, the space charge limited currents are affected and higher density of states is obtained. The PPC was more in the structures where numbers of such interface were more. These results have been understood in terms of the charge carriers trapped at the interface, which influence the electronic transport.

Gate dielectric surface treatments for performance improvement of poly(3-hexylthiophene-2,5-diyl) based organic field-effect transistors

NASA Astrophysics Data System (ADS)

Nawaz, Ali; de, Cristiane, , Col; Cruz-Cruz, Isidro; Kumar, Anshu; Kumar, Anil; Hümmelgen, Ivo A.

2015-08-01

We report on enhanced performance in poly(3-hexylthiophene-2,5-diyl) (P3HT) based organic field effect transistors (OFETs) achieved by improvement in hole transport along the channel near the insulator/semiconductor (I/S) interface. The improvement in hole transport is demonstrated to occur very close to the I/S interface, after treatment of the insulator layer with sodium dodecyl sulfate (SDS). SDS is an anionic surfactant, with negatively charged heads, known for formation of micelles above critical micelle concentration (CMC), which contribute to the passivation of positively charged traps. Investigation of field-effect mobility (μFET) as a function of channel bottleneck thickness in OFETs reveals the favorable gate voltage regime where mobility is the highest. In addition, it shows that the gate dielectric surface treatment not only leads to an increase in mobility in that regime, but also displaces charge transport closer to the interface, hence pointing toward passivation of the charge traps at I/S interface. OFETs with SDS treatment were compared with untreated and vitamin C or hexadecyltrimethylammonium bromide (CTAB) treated OFETs. All the treatments resulted in significant improvements in specific dielectric capacitance, μFET, on/off current ratio and transconductance.

Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.

PubMed

Kent, Tyler; Chagarov, Evgeniy; Edmonds, Mary; Droopad, Ravi; Kummel, Andrew C

2015-05-26

Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.

PyBoolNet: a python package for the generation, analysis and visualization of boolean networks.

PubMed

Klarner, Hannes; Streck, Adam; Siebert, Heike

2017-03-01

The goal of this project is to provide a simple interface to working with Boolean networks. Emphasis is put on easy access to a large number of common tasks including the generation and manipulation of networks, attractor and basin computation, model checking and trap space computation, execution of established graph algorithms as well as graph drawing and layouts. P y B ool N et is a Python package for working with Boolean networks that supports simple access to model checking via N u SMV, standard graph algorithms via N etwork X and visualization via dot . In addition, state of the art attractor computation exploiting P otassco ASP is implemented. The package is function-based and uses only native Python and N etwork X data types. https://github.com/hklarner/PyBoolNet. hannes.klarner@fu-berlin.de. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com

Hopping and trapping mechanisms in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Konezny, S. J.; Bussac, M. N.; Zuppiroli, L.

2010-01-01

A charge carrier in the channel of an organic field-effect transistor (OFET) is coupled to the electric polarization of the gate in the form of a surface Fröhlich polaron [N. Kirova and M. N. Bussac, Phys. Rev. B 68, 235312 (2003)]. We study the effects of the dynamical field of polarization on both small-polaron hopping and trap-limited transport mechanisms. We present numerical calculations of polarization energies, band-narrowing effects due to polarization, hopping barriers, and interface trap depths in pentacene and rubrene transistors as functions of the dielectric constant of the gate insulator and demonstrate that a trap-and-release mechanism more appropriately describes transport in high-mobility OFETs. For mobilities on the order 0.1cm2/Vs and below, all states are highly localized and hopping becomes the predominant mechanism.

Cavitation during the protein misfolding cyclic amplification (PMCA) method – The trigger for de novo prion generation?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haigh, Cathryn L., E-mail: chaigh@unimelb.edu.au; Drew, Simon C., E-mail: sdrew@unimelb.edu.au

The protein misfolding cyclic amplification (PMCA) technique has become a widely-adopted method for amplifying minute amounts of the infectious conformer of the prion protein (PrP). PMCA involves repeated cycles of 20 kHz sonication and incubation, during which the infectious conformer seeds the conversion of normally folded protein by a templating interaction. Recently, it has proved possible to create an infectious PrP conformer without the need for an infectious seed, by including RNA and the phospholipid POPG as essential cofactors during PMCA. The mechanism underpinning this de novo prion formation remains unknown. In this study, we first establish by spin trapping methodsmore » that cavitation bubbles formed during PMCA provide a radical-rich environment. Using a substrate preparation comparable to that employed in studies of de novo prion formation, we demonstrate by immuno-spin trapping that PrP- and RNA-centered radicals are generated during sonication, in addition to PrP-RNA cross-links. We further show that serial PMCA produces protease-resistant PrP that is oxidatively modified. We suggest a unique confluence of structural (membrane-mimetic hydrophobic/hydrophilic bubble interface) and chemical (ROS) effects underlie the phenomenon of de novo prion formation by PMCA, and that these effects have meaningful biological counterparts of possible relevance to spontaneous prion formation in vivo. - Highlights: • Sonication during PMCA generates free radicals at the surface of cavitation bubbles. • PrP-centered and RNA-centered radicals are formed in addition to PrP-RNA adducts. • De novo prions may result from ROS and structural constraints during cavitation.« less

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Joung-min, E-mail: cho.j.ad@m.titech.ac.jp; Akiyama, Yuto; Kakinuma, Tomoyuki

2013-10-15

We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulatedmore » characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V{sub G} above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge.« less

Conduction in titanium dioxide films and metal–TiO{sub 2}–Si structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalygina, V. M.; Egorova, I. M.; Prudaev, I. A.

2016-08-15

The effect of the annealing of titanium oxide films on the electrical properties of metal–TiO{sub 2}–n-Si structures is investigated. It is shown that, regardless of the annealing temperature, the conductivity of the structures at positive gate potentials is determined by the space-charge-limited current in the insulator with traps exponentially distributed in terms of energy. At negative gate potentials, the main contribution to the current is provided by the generation of electron–hole pairs in the space-charge region in silicon. The properties of the TiO{sub 2}/n-Si interface depend on the structure and phase state of the oxide film, which are determined bymore » the annealing temperature.« less

A High Voltage Asymmetric Waveform Generator for FAIMS

PubMed Central

Canterbury, Jesse D.; Gladden, James; Buck, Lon; Olund, Roy; MacCoss, Michael J.

2010-01-01

High field asymmetric waveform ion mobility spectrometry (FAIMS) has been used increasingly in recent years as an additional method of ion separation and selection prior to mass spectrometry. The FAIMS electrodes are relatively simple to design and fabricate for laboratories wishing to implement their own FAIMS designs. However, construction of the electronics apparatus needed to produce the required high magnitude asymmetric electric field oscillating at a frequency of several hundred kilohertz is not trivial. Here we present an entirely custom-built electronics setup capable of supplying the required waveforms and voltages. The apparatus is relatively simple and inexpensive to implement. We also present data acquired on this system demonstrating the use of FAIMS as a gas phase ion filter interface to an ion trap mass spectrometer. PMID:20332067

Toward laser cooling and trapping lanthanum ions

NASA Astrophysics Data System (ADS)

Olmschenk, Steven; Banner, Patrick; Hankes, Jessie; Nelson, Amanda

2017-04-01

Trapped atomic ions are a leading candidate for applications in quantum information. For scalability and applications in quantum communication, it would be advantageous to interface ions with telecom light. We present progress toward laser cooling doubly-ionized lanthanum, which should require only infrared, telecom-compatible light. Since the hyperfine structure of this ion has not been measured, we are using optogalavanic spectroscopy in a hollow cathode lamp to measure the hyperfine spectrum of transitions in lanthanum. Using laser ablation to directly produce ions from a solid target, we laser cool and trap barium ions, and explore extending this technique to lanthanum ions. This research is supported by the Army Research Office, Research Corporation for Science Advancement, and Denison University.

Trapped Modes in a Three-Layer Fluid

NASA Astrophysics Data System (ADS)

Saha, Sunanda; Bora, Swaroop Nandan

2018-03-01

In this work, trapped mode frequencies are computed for a submerged horizontal circular cylinder with the hydrodynamic set-up involving an infinite depth three-layer incompressible fluid with layer-wise different densities. The impermeable cylinder is fully immersed in either the bottom layer or the upper layer. The effect of surface tension at the surface of separation is neglected. In this set-up, there exist three wave numbers: the lowest one on the free surface and the other two on the internal interfaces. For each wave number, there exist two modes for which trapped waves exist. The existence of these trapped modes is shown by numerical evidence. We investigate the variation of these trapped modes subject to change in the depth of the middle layer as well as the submergence depth. We show numerically that two-layer and single-layer results cannot be recovered in the double and single limiting cases of the density ratios tending to unity. The existence of trapped modes shows that in general, a radiation condition for the waves at infinity is insufficient for the uniqueness of the solution of the scattering problem.

Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

NASA Astrophysics Data System (ADS)

Xiang, An; Xu, Xingliang; Zhang, Lin; Li, Zhiqiang; Li, Juntao; Dai, Gang

2018-02-01

The conduction of current from n-4H-SiC into pyrogenic and dry oxidized films is studied. Anomalous current conduction was observed at a high electric field above 8 MV/cm for dry oxidized metal-oxide-semiconductor (MOS) capacitors, which cannot be interpreted in the framework of pure Fowler-Nordheim tunneling. The temperature-dependent current measurement and density of interface trap estimated from the hi-lo method for the SiO2/4H-SiC interface revealed that the combined current conduction of Fowler-Nordheim and Poole-Frenkel emission is responsible for the current conduction in both pyrogenic and dry oxidized MOS capacitors. Furthermore, the origin of temperature dependent current conduction is the Poole-Frenkel emission via the carbon pair defect trap level at 1.3 eV below the conduction band edge of SiO2. In addition, with the dry oxidized capacitors, the enhanced temperature dependent current above 8 MV/cm is attributed to the PF emission via a trap level at 1.47 eV below the conduction band edge of SiO2, which corresponds to another configuration of a carbon pair defect in SiO2 films.

Comparison of palladium and zirconium treated graphite tubes for in-atomizer trapping of hydrogen selenide in hydride generation electrothermal atomization atomic absorption spectrometry

NASA Astrophysics Data System (ADS)

Laborda, Francisco; Medrano, Jesús; Cortés, José I.; Mir, José M.; Castillo, Juan R.

1999-02-01

Zirconium treated graphite tubes were investigated and compared with non-treated and palladium coated ones for in situ trapping of selenium hydride generated in a flow injection system. Selenium was effectively trapped on zirconium treated tubes at trapping temperatures of 300-600°C, similar to those observed for palladium, whereas trapping temperatures higher than 600°C had to be used with non-treated tubes. Zirconium treated tubes used in this work showed good stability up to 300 trapping/atomization cycles, with precision better than 5%, characteristic masses of 42 (peak height) and 133 pg (peak area) of selenium were obtained. Sensitivity of zirconium and palladium treatments were similar, but zirconium offered the advantage of a single application per tube. Detection limits were 0.11 (peak height) and 0.23 ng (peak area) for a 1 ml sample volume.

Quantitative analysis of seismic trapped waves in the rupture zone of the Landers, 1992, California earthquake: Evidence for a shallow trapping structure

NASA Astrophysics Data System (ADS)

Peng, Z.; Ben-Zion, Y.; Michael, A. J.; Zhu, L.

2002-12-01

Waveform modeling of seismic fault zone (FZ) trapped waves has been claimed to provide a high resolution imaging of FZ structure at seismogenic depth. We analyze quantitatively a waveform data set generated by 238 Landers aftershocks recorded by a portable seismic array (Lee, 1999). The array consists of 33 three-component L-22 seismometers, 22 of which on a line crossing the surface rupture zone of the mainshock. A subset of 93 aftershocks were also recorded by the Southern California Seismic Network, while the other events were recorded only by the FZ array. We locate the latter subset of events with a "grid-search relocation method" using accurately picked P and S arrival times, a half-space velocity model, and back-azimuth adjustment to correct the effect of low velocity FZ material on phase arrivals. Next we determine the quality of FZ trapped wave generation from the ratio of trapped waves to S-wave energy for stations relatively close to and far from the FZ. Energy ratios exceeding 4, between 2 and 4, and less than 2, are assigned quality A, B, and C of trapped wave generation. We find that about 70% of nearby events with S-P time less than 2 sec, including many clearly off the fault, generate FZ trapped waves with quality A or B. This distribution is in marked contrast with previous claims that trapped waves at Landers are generated only by sources close to or inside the fault zone (Li et al., 1994, 2000). The existence of trapped waves due to sources outside the Landers rupture zone indicates that the generating structure is shallow, as demonstrated in recent 3D calculations of wave propagation in irregular FZ structures (Fohrmann et al., 2002). The time difference between the S arrivals and trapped wave group does not grow systematically with increasing source-receiver distance along the fault, in agreement with the above conclusion. The dispersion of trapped waves at Landers is rather weak, again suggesting a short propagation distance inside the low velocity FZ material. To put additional constraints on properties of the shallow trapping structure at Landers, we modeled FZ trapped waves with a genetic inversion algorithm (Michael and Ben-Zion, 2002) using the 2D analytical solution of Ben-Zion and Aki (1990) and Ben-Zion (1998) for a uniform FZ structure. The synthetic waveform modeling indicates an effective FZ waveguide with depth of about 3-5 km, width on the order of 200 m, shear velocity reduction relative to the host rock of about 40-50%, and S wave quality factor of about 30. The modeling also shows that the waveguide is not centered at the exposed fault trace (station C00), but at a distance of about 100 m east of C00. Shallow trapping structures with similar properties appear to characterize also the Karadere-Duzce branch of the north Anatolian fault (Ben-Zion et al., 2002) and the Parkfield segment of the San Andreas fault (Michael and Ben-Zion, 2002; Korneev et al., 2002).

Shaping of nested potentials for electron cooling of highly-charged ions in a cooler Penning trap

NASA Astrophysics Data System (ADS)

Paul, Stefan; Kootte, Brian; Lascar, Daniel; Gwinner, Gerald; Dilling, Jens; Titan Collaboration

2016-09-01

TRIUMF's Ion Trap for Atomic and Nuclear science (TITAN) is dedicated to mass spectrometry and decay spectroscopy of short-lived radioactive nuclides in a series of ion traps including a precision Penning trap. In order to boost the achievable precision of mass measurements TITAN deploys an Electron Beam Ion Trap (EBIT) providing Highly-Charged Ions (HCI). However, the charge breeding process in the EBIT leads to an increase in the ion bunch's energy spread which is detrimental to the overall precision gain. To reduce this effect a new cylindrical Cooler PEnning Trap (CPET) is being commissioned to sympathetically cool the HCI via a simultaneously trapped electron plasma. Simultaneous trapping of ions and electrons requires a high level of control over the nested potential landscape and sophisticated switching schemes for the voltages on CPET's multiple ring electrodes. For this purpose, we are currently setting up a new experimental control system for multi-channel voltage switching. The control system employs a Raspberry Pi communicating with a digital-to-analog board via a serial peripheral interface. We report on the implementation of the voltage control system and its performance with respect to electron and ion manipulation in CPET. University of British Columbia, Vancouver, BC, Canada.

What can we learn from AC impedance study about the bipolar resistive switching effect in LaAlO3/Nb:SrTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Jiang, Xingli; Zhao, Yonggang; Zhang, Xin; Zhu, Meihong; Zhang, Huiyun; Shang, Dashan; Sun, Jirong

2013-03-01

Recently, resistive switching (RS) effect has attracted much attention due to its importance in potential applications in resistance random access memory. It has been shown that traps play an important role in RS effect. However, a direct and in-depth study on the characteristics of traps is still lacking so far, including the spatial and energy distribution of traps, relaxation of trapped carriers and transport of carriers via traps, especially the effect of historical process on the transport of carriers, which are important for understanding the mechanism of RS effect and also essential for optimizing devices. We studied the RS effect in heterostructures composed of LaAlO3 (LAO) and Nb:SrTiO3 (NSTO) from 80 to 300 K by using AC impedance technique. It was demonstrated that the bipolar RS effect originates from the LAO/NSTO interface and the resistance states are controlled by the filling status of traps via the trapping/detrapping of electrons. Moreover, the spatial and energy distributions of traps and the effect of history on the transport of carriers were obtained. A model was proposed to explain the experimental results. This work demonstrates that AC impedance technique is powerful for uncovering the mechanism of RS effect.

Fluid pathways from mantle wedge up to forearc seafloor in the coseismic slip area of the 2011 Tohoku earthquake

NASA Astrophysics Data System (ADS)

Park, J. O.; Tsuru, T.; Fujie, G.; Kagoshima, T.; Sano, Y.

2017-12-01

A lot of fluids at subduction zones are exchanged between the solid Earth and ocean, affecting the earthquake and tsunami generation. New multi-channel seismic reflection and sub-bottom profiling data reveal normal and reverse faults as the fluid pathways in the coseismic slip area of the 2011 Tohoku earthquake (M9.0). Based on seismic reflection characteristics and helium isotope anomalies, we recognize variations in fluid pathways (i.e., faults) from the mantle wedge up to forearc seafloor in the Japan Trench margin. Some fluids are migrated from the mantle wedge along plate interface and then normal or reverse faults cutting through the overriding plate. Others from the mantle wedge are migrated directly up to seafloor along normal faults, without passing through the plate interface. Locations of the normal faults are roughly consistent with aftershocks of the 2011 Tohoku earthquake, which show focal mechanism of normal faulting. It is noticeable that landward-dipping normal faults developing down into Unit C (Cretaceous basement) from seafloor are dominant in the middle slope region where basal erosion is inferred to be most active. A high-amplitude, reverse-polarity reflection of the normal faults within Unit C suggests that the fluids are locally trapped along the faults in high pore pressures. The 2011 Tohoku mainshock and subsequent aftershocks could lead the pre-existing normal faults to be reactive and more porous so that the trapped fluids are easily transported up to seafloor through the faults. Elevated fluid pressures can decrease the effective normal stress for the fault plane, allowing easier slip of the landward-dipping normal fault and also enhancing its tsunamigenic potential.

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

NASA Astrophysics Data System (ADS)

Yokoyama, Masafumi; Asakura, Yuji; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi

2014-06-01

We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al2O3/GaSb MOS interface properties. The Al2O3/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (Dit) of ˜4.5 × 1013 cm-2 eV-1. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al2O3/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

Philippine microplate tectonics and hydrocarbon exploration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallagher, J.J. Jr.

1986-07-01

Hydrocarbon traps in the Philippine Islands developed during a long, complex history of microplate tectonics. Carbonate and clastic stratigraphic traps formed during Mesozoic and early Cenozoic rifting and drifting. Hydrocarbons, generated in deep rift basins, migrated to the traps during drifting. Later Cenozoic compressional tectonic activity and concomitant faulting enhanced some traps and destroyed others. Seismic data offshore from Palawan Island reveal the early trap histories. Later trap histories can be interpreted from seismic, outcrop, and remote-sensing data. Understanding the microplate tectonic history of the Philippines is the key to interpreting trap histories.

Amino-Acid-Induced Preferential Orientation of Perovskite Crystals for Enhancing Interfacial Charge Transfer and Photovoltaic Performance.

PubMed

Shih, Yen-Chen; Lan, Yu-Bing; Li, Chia-Shuo; Hsieh, Hsiao-Chi; Wang, Leeyih; Wu, Chih-I; Lin, King-Fu

2017-06-01

Interfacial engineering of perovskite solar cells (PSCs) is attracting intensive attention owing to the charge transfer efficiency at an interface, which greatly influences the photovoltaic performance. This study demonstrates the modification of a TiO 2 electron-transporting layer with various amino acids, which affects charge transfer efficiency at the TiO 2 /CH 3 NH 3 PbI 3 interface in PSC, among which the l-alanine-modified cell exhibits the best power conversion efficiency with 30% enhancement. This study also shows that the (110) plane of perovskite crystallites tends to align in the direction perpendicular to the amino-acid-modified TiO 2 as observed in grazing-incidence wide-angle X-ray scattering of thin CH 3 NH 3 PbI 3 perovskite film. Electrochemical impedance spectroscopy reveals less charge transfer resistance at the TiO 2 /CH 3 NH 3 PbI 3 interface after being modified with amino acids, which is also supported by the lower intensity of steady-state photoluminescence (PL) and the reduced PL lifetime of perovskite. In addition, based on the PL measurement with excitation from different side of the sample, amino-acid-modified samples show less surface trapping effect compared to the sample without modification, which may also facilitate charge transfer efficiency at the interface. The results suggest that appropriate orientation of perovskite crystallites at the interface and trap-passivation are the niche for better photovoltaic performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Novel Measurements of Aerosol Particle Interfaces Using Biphasic Microfluidics

NASA Astrophysics Data System (ADS)

Metcalf, A. R.; Dutcher, C. S.

2014-12-01

Secondary organic aerosol (SOA) particles are nearly ubiquitous in the atmosphere and yet there remains large uncertainties in their formation processes and ambient properties. These particles are complex microenvironments, which can contain multiple interfaces due to internal aqueous-organic phase partitioning and to the external liquid-vapor surface. These aerosol interfaces can profoundly affect the fate of condensable organic compounds emitted into the atmosphere by altering the way in which organic vapors interact with the ambient aerosol. Aerosol interfaces affect particle internal structure, species uptake, equilibrium partitioning, activation to cloud condensation or ice nuclei, and optical properties. For example, organic thin films can shield the core of the aerosol from the ambient environment, which may disrupt equilibrium partitioning and mass transfer. To improve our ability to accurately predict the fate of SOA in the atmosphere, we must improve our knowledge of aerosol interfaces and their interactions with the ambient environment. Few technologies exist to accurately probe aerosol interfaces at atmospherically-relevant conditions. In this talk, a novel method using biphasic microscale flows will be introduced for generating, trapping, and perturbing complex interfaces at atmospherically relevant conditions. These microfluidic experiments utilize high-speed imaging to monitor interfacial phenomena at the microscale and are performed with phase contrast and fluorescence microscopy on a temperature-controlled inverted microscope stage. From these experiments, interfacial thermodynamic properties such as surface tension, rheological properties such as interfacial moduli, and kinetic properties such as mass transfer coefficients can be measured or inferred. Chemical compositions of the liquid phases studied here span a range of viscosities and include electrolyte and water soluble organic acid species often observed in the atmosphere, such as mixtures containing ammonium salts (e.g., (NH4)2SO4, NH4NO3) and dicarboxylic acids (e.g., malonic, glutaric, and maleic acid) as well as important mimic compounds such as sucrose - water systems.

Materials interface engineering for solution-processed photovoltaics.

PubMed

Graetzel, Michael; Janssen, René A J; Mitzi, David B; Sargent, Edward H

2012-08-16

Advances in solar photovoltaics are urgently needed to increase the performance and reduce the cost of harvesting solar power. Solution-processed photovoltaics are cost-effective to manufacture and offer the potential for physical flexibility. Rapid progress in their development has increased their solar-power conversion efficiencies. The nanometre (electron) and micrometre (photon) scale interfaces between the crystalline domains that make up solution-processed solar cells are crucial for efficient charge transport. These interfaces include large surface area junctions between photoelectron donors and acceptors, the intralayer grain boundaries within the absorber, and the interfaces between photoactive layers and the top and bottom contacts. Controlling the collection and minimizing the trapping of charge carriers at these boundaries is crucial to efficiency.

Implications of tidally-varying bed stress and intermittent estuarine stratification on fine-sediment dynamics through the Mekong's tidal river to estuarine reach

NASA Astrophysics Data System (ADS)

McLachlan, R. L.; Ogston, A. S.; Allison, M. A.

2017-09-01

River gauging stations are often located upriver of tidal propagation where sediment transport processes and storage are impacted by widely varying ratios of marine to freshwater influence. These impacts are not yet thoroughly understood. Therefore, sediment fluxes measured at these stations may not be suitable for predicting changes to coastal morphology. To characterize sediment transport dynamics in this understudied zone, flow velocity, salinity, and suspended-sediment properties (concentration, size, and settling velocity) were measured within the tidal Sông Hậu distributary of the lower Mekong River, Vietnam. Fine-sediment aggregation, settling, and trapping rates were promoted by seasonal and tidal fluctuations in near-bed shear stress as well as the intermittent presence of a salt wedge and estuary turbidity maximum. Beginning in the tidal river, fine-grained particles were aggregated in freshwater. Then, in the interface zone between the tidal river and estuary, impeded near-bed shear stress and particle flux convergence promoted settling and trapping. Finally, in the estuary, sediment retention was further encouraged by stratification and estuarine circulation which protected the bed against particle resuspension and enhanced particle aggregation. These patterns promote mud export ( 1.7 t s-1) from the entire study area in the high-discharge season when fluvial processes dominate and mud import ( 0.25 t s-1) into the estuary and interface zone in the low-discharge season when estuarine processes dominate. Within the lower region of the distributaries, morphological change in the form of channel abandonment was found to be promoted within minor distributaries by feedbacks between channel depth, vertical mixing, and aggregate trapping. In effect, this field study sheds light on the sediment trapping capabilities of the tidal river - estuary interface zone, a relatively understudied region upstream of where traditional concepts place sites of deposition, and predicts how fine-sediment dynamics and morphology of large tropical deltas such as the Mekong will respond to changing fluvial and marine influences in the future.

Two stages of deformation and fluid migration in the central Brooks Range fold-and-thrust belt

USGS Publications Warehouse

Moore, Thomas E.; Potter, Christopher J.; O'Sullivan, Paul B.; Shelton, Kevin L.; Underwood, Michael B.

2004-01-01

We conclude that hydrocarbon generation from Triassic and Jurassic source strata and migration into stratigraphic traps occurred primarily by sedimentary burial principally at 100-90 Ma, between the times of the two major episodes of deformation. Subsequent sedimentary burial caused deep stratigraphic traps to become overmature, cracking oil to gas, and initiated some new hydrocarbon generation progressively higher in the section. Structural disruption of the traps in the early Tertiary released sequestered hydrocarbons. The hydrocarbons remigrated into newly formed structural traps, which formed at higher structural levels or were lost to the surface. Because of the generally high maturation of the Colville basin at the time of the deformation and remigration, most of the hydrocarbons available to fill traps were gas.

Near-field multiple traps of paraxial acoustic vortices with strengthened gradient force generated by sector transducer array

NASA Astrophysics Data System (ADS)

Wang, Qingdong; Li, Yuzhi; Ma, Qingyu; Guo, Gepu; Tu, Juan; Zhang, Dong

2018-01-01

In order to improve the capability of particle trapping close to the source plane, theoretical and experimental studies on near-field multiple traps of paraxial acoustic vortices (AVs) with a strengthened acoustic gradient force (AGF) generated by a sector transducer array were conducted. By applying the integration of point source radiation, numerical simulations for the acoustic fields generated by the sector transducer array were conducted and compared with those produced by the circular transducer array. It was proved that strengthened AGFs of near-field multiple AVs with higher peak pressures and smaller vortex radii could be produced by the sector transducer array with a small topological charge. The axial distributions of the equivalent potential gradient indicated that the AGFs of paraxial AVs in the near field were much higher than those in the far field, and the distances at the near-field vortex antinodes were also proved to be the ideal trapping positions with relatively higher AGFs. With the established 8-channel AV generation system, theoretical studies were also verified by the experimental measurements of pressure and phase for AVs with various topological charges. The formation of near-field multiple paraxial AVs was verified by the cross-sectional circular pressure distributions with perfect phase spirals around central pressure nulls, and was also proved by the vortex nodes and antinodes along the center axis. The favorable results demonstrated the feasibility of generating near-field multiple traps of paraxial AVs with strengthened AGF using the sector transducer array, and suggested the potential applications of close-range particle trapping in biomedical engineering.

Simulation of Biomolecular Nanomechanical Systems

DTIC Science & Technology

2006-10-01

optimization of doping concentration and minimizing the interface traps. Surface Immobilization of Receptors For biomolecular binding experiments...Biosensors,” Langmuir, Vol. 21, pp. 1956-1961 (2005). 13. M. Yue, Multiplexed Label-Free Bioassays Using Nanomechanics and Nanofluidics , PhD Thesis

Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

NASA Astrophysics Data System (ADS)

Colleoni, Davide; Pourtois, Geoffrey; Pasquarello, Alfredo

2017-03-01

In and Ga impurities substitutional to Al in the oxide layer resulting from diffusion out of the substrate are identified as candidates for electron traps under inversion at In0.53Ga0.47As/Al2O3 interfaces. Through density-functional calculations, these defects are found to be thermodynamically stable in amorphous Al2O3 and to be able to capture two electrons in a dangling bond upon breaking bonds with neighboring O atoms. Through a band alignment based on hybrid functional calculations, it is inferred that the corresponding defect levels lie at ˜1 eV above the conduction band minimum of In0.53Ga0.47As, in agreement with measured defect densities. These results support the technological importance of avoiding cation diffusion into the oxide layer.

Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors

NASA Astrophysics Data System (ADS)

Zhang, Xufang; Okamoto, Dai; Hatakeyama, Tetsuo; Sometani, Mitsuru; Harada, Shinsuke; Iwamuro, Noriyuki; Yano, Hiroshi

2018-06-01

The impact of oxide thickness on the density distribution of near-interface traps (NITs) in SiO2/4H-SiC structure was investigated. We used the distributed circuit model that had successfully explained the frequency-dependent characteristics of both capacitance and conductance under strong accumulation conditions for SiO2/4H-SiC MOS capacitors with thick oxides by assuming an exponentially decaying distribution of NITs. In this work, it was found that the exponentially decaying distribution is the most plausible approximation of the true NIT distribution because it successfully explained the frequency dependences of capacitance and conductance under strong accumulation conditions for various oxide thicknesses. The thickness dependence of the NIT density distribution was also characterized. It was found that the NIT density increases with increasing oxide thickness, and a possible physical reason was discussed.

A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

NASA Technical Reports Server (NTRS)

Kuhlman, G. J.

1979-01-01

The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

Kinetic Phase Diagrams of Ternary Al-Cu-Li System during Rapid Solidification: A Phase-Field Study

PubMed Central

Yang, Xiong; Zhang, Lijun; Sobolev, Sergey; Du, Yong

2018-01-01

Kinetic phase diagrams in technical alloys at different solidification velocities during rapid solidification are of great importance for guiding the novel alloy preparation, but are usually absent due to extreme difficulty in performing experimental measurements. In this paper, a phase-field model with finite interface dissipation was employed to construct kinetic phase diagrams in the ternary Al-Cu-Li system for the first time. The time-elimination relaxation scheme was utilized. The solute trapping phenomenon during rapid solidification could be nicely described by the phase-field simulation, and the results obtained from the experiment measurement and/or the theoretical model were also well reproduced. Based on the predicted kinetic phase diagrams, it was found that with the increase of interface moving velocity and/or temperature, the gap between the liquidus and solidus gradually reduces, which illustrates the effect of solute trapping and tendency of diffusionless solidification. PMID:29419753

Singlet oxygen generation on porous superhydrophobic surfaces: effect of gas flow and sensitizer wetting on trapping efficiency.

PubMed

Zhao, Yuanyuan; Liu, Yang; Xu, Qianfeng; Barahman, Mark; Bartusik, Dorota; Greer, Alexander; Lyons, Alan M

2014-11-13

We describe physical-organic studies of singlet oxygen generation and transport into an aqueous solution supported on superhydrophobic surfaces on which silicon-phthalocyanine (Pc) particles are immobilized. Singlet oxygen ((1)O2) was trapped by a water-soluble anthracene compound and monitored in situ using a UV-vis spectrometer. When oxygen flows through the porous superhydrophobic surface, singlet oxygen generated in the plastron (i.e., the gas layer beneath the liquid) is transported into the solution within gas bubbles, thereby increasing the liquid-gas surface area over which singlet oxygen can be trapped. Higher photooxidation rates were achieved in flowing oxygen, as compared to when the gas in the plastron was static. Superhydrophobic surfaces were also synthesized so that the Pc particles were located in contact with, or isolated from, the aqueous solution to evaluate the relative effectiveness of singlet oxygen generated in solution and the gas phase, respectively; singlet oxygen generated on particles wetted by the solution was trapped more efficiently than singlet oxygen generated in the plastron, even in the presence of flowing oxygen gas. A mechanism is proposed that explains how Pc particle wetting, plastron gas composition and flow rate as well as gas saturation of the aqueous solution affect singlet oxygen trapping efficiency. These stable superhydrophobic surfaces, which can physically isolate the photosensitizer particles from the solution may be of practical importance for delivering singlet oxygen for water purification and medical devices.

Current-voltage characteristics in organic field-effect transistors. Effect of interface dipoles

NASA Astrophysics Data System (ADS)

Sworakowski, Juliusz

2015-07-01

The role of polar molecules present at dielectric/semiconductor interfaces of organic field-effect transistors (OFETs) has been assessed employing the electrostatic model put forward in a recently published paper (Sworakowski et al., 2014). The interface dipoles create dipolar traps in the surface region of the semiconductor, their depths decreasing with the distance from the interface. This feature results in appearance of mobility gradients in the direction perpendicular to the dielectric/semiconductor interface, manifesting themselves in modification of the shapes of current-voltage characteristics. The effect may account for differences in carrier mobilities determined from the same experimental data using methods scanning different ranges of channel thicknesses (e.g., transconductances vs. transfer characteristics), differences between turn-on voltages and threshold voltages, and gate voltage dependence of mobility.

Fastest predators in the plant kingdom: functional morphology and biomechanics of suction traps found in the largest genus of carnivorous plants.

PubMed

Poppinga, Simon; Weisskopf, Carmen; Westermeier, Anna Sophia; Masselter, Tom; Speck, Thomas

2015-11-24

Understanding the physics of plant movements, which describe the interplay between plant architecture, movement speed and actuation principles, is essential for the comprehension of important processes like plant morphogenesis. Recent investigations especially on rapid plant movements at the interface of biology, physics and engineering sciences highlight how such fast motions can be achieved without the presence of muscles, nerves and technical hinge analogies. The suction traps (bladders) of carnivorous bladderworts (Utricularia spp., Lentibulariaceae, Lamiales) are considered as some of the most elaborate moving structures in the plant kingdom. A complex interplay of morphological and physiological adaptations allows the traps to pump water out of their body and to store elastic energy in the deformed bladder walls. Mechanical stimulation by prey entails opening of the otherwise watertight trapdoor, followed by trap wall relaxation, sucking in of water and prey, and consecutive trapdoor closure. Suction can also occur spontaneously in non-stimulated traps. We review the current state of knowledge about the suction trap mechanism with a focus on architectonically homogeneous traps of aquatic bladderwort species from section Utricularia (the so-called 'Utricularia vulgaris trap type'). The functional morphology and biomechanics of the traps are described in detail. We discuss open questions and propose promising aspects for future studies on these sophisticated ultra-fast trapping devices. Published by Oxford University Press on behalf of the Annals of Botany Company.

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

NASA Astrophysics Data System (ADS)

Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

2018-05-01

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Huang, X. D.; Lai, P. T.; Liu, L.; Xu, J. P.

2011-06-01

Charge-trapping characteristics of SrTiO3 with and without nitrogen incorporation were investigated based on Al/Al2O3/SrTiO3/SiO2/Si (MONOS) capacitors. A Ti-silicate interlayer at the SrTiO3/SiO2 interface was confirmed by x-ray photoelectron spectroscopy and transmission electron microscopy. Compared with the MONOS capacitor with SrTiO3 as charge-trapping layer (CTL), the one with nitrided SrTiO3 showed a larger memory window (8.4 V at ±10 V sweeping voltage), higher P/E speeds (1.8 V at 1 ms +8 V) and better retention properties (charge loss of 38% after 104 s), due to the nitrided SrTiO3 film exhibiting higher dielectric constant, higher deep-level traps induced by nitrogen incorporation, and suppressed formation of Ti silicate between the CTL and SiO2 by nitrogen passivation.

Importance of hydrophobic traps for proton diffusion in lyotropic liquid crystals

DOE PAGES

McDaniel, Jesse G.; Yethiraj, Arun

2016-03-04

The diffusion of protons in self-assembled systems is potentially important for the design of efficient proton exchange membranes. In this work, we study proton dynamics in a low-water content, lamellar phase of an sodium-carboxylate gemini surfactant/water system using computer simulations. The hopping of protons via the Grotthuss mechanism is explicity allowed through the multi-state empirical valence bond (MS-EVB) method. We find that the hydronium ion is trapped on the hydrophobic side of the surfactant-water interface, and proton diffusion then proceeds by hopping between surface sites. The importance of hydrophobic traps is surprising, because one would expect the hydronium ions tomore » be trapped at the charged head-groups. Finally, the physics illustrated in this system should be relevant to the proton dynamics in other amphiphilic membrane systems, whenever there exists exposed hydrophobic surface regions.« less

Discovery of Fe–Ce Oxide/BiVO 4 Photoanodes through Combinatorial Exploration of Ni–Fe–Co–Ce Oxide Coatings

DOE PAGES

Shinde, Aniketa; Guevarra, Dan; Liu, Guiji; ...

2016-08-23

An efficient photoanode is a prerequisite for a viable solar fuels technology. The challenges to realizing an efficient photoanode include the integration of a semiconductor light absorber and a metal oxide electrocatalyst to optimize corrosion protection, light trapping, hole transport, and photocarrier recombination sites. In order to efficiently explore metal oxide coatings, we employ a high throughput methodology wherein a uniform BiVO 4 film is coated with 858 unique metal oxide coatings covering a range of metal oxide loadings and the full (Ni-Fe-Co-Ce)Ox pseudo-quaternary composition space. Photoelectrochemical characterization of the photoanodes reveals that specific combinations of metal oxide composition andmore » loading provide up to a 13-fold increase in the maximum photoelectrochemical power generation for oxygen evolution in pH 13 electrolyte. Through mining of the high throughput data we identify composition regions that form improved interfaces with BiVO 4. Of particular note, integrated photoanodes with catalyst compositions in the range Fe (0.4-0.6)Ce (0.6-0.4)O x exhibit high interface quality and excellent photoelectrochemical power conversion. Furthermore, for scaled-up inkjet-printed electrodes and photoanodic electrodeposition of this composition on BiVO 4 we can confirm the discovery and the synthesis-independent interface improvement of (Fe-Ce)O x coatings on BiVO 4.« less

Discovery of Fe–Ce Oxide/BiVO 4 Photoanodes through Combinatorial Exploration of Ni–Fe–Co–Ce Oxide Coatings

DOE PAGES

Shinde, Aniketa; Guevarra, Dan; Liu, Guiji; ...

2016-08-23

An efficient photoanode is a prerequisite for a viable solar fuels technology. The challenges to realizing an efficient photoanode include the integration of a semiconductor light absorber and a metal oxide electrocatalyst to optimize corrosion protection, light trapping, hole transport, and photocarrier recombination sites. In order to efficiently explore metal oxide coatings, we employ a high throughput methodology wherein a uniform BiVO 4 film is coated with 858 unique metal oxide coatings covering a range of metal oxide loadings and the full (Ni-Fe-Co-Ce)O x pseudo-quaternary composition space. Photoelectrochemical characterization of the photoanodes reveals that specific combinations of metal oxide compositionmore » and loading provide up to a 13-fold increase in the maximum photoelectrochemical power generation for oxygen evolution in pH 13 electrolyte. Through mining of the high throughput data we identify composition regions that form improved interfaces with BiVO 4. Of particular note, integrated photoanodes with catalyst compositions in the range Fe (0.4-0.6)Ce (0.6-0.4)O x exhibit high interface quality and excellent photoelectrochemical power conversion. Furthermore, for scaled-up inkjet-printed electrodes and photoanodic electrodeposition of this composition on BiVO 4 we can confirm the discovery and the synthesis-independent interface improvement of (Fe-Ce)O x coatings on BiVO 4.« less

Trapping of Embolic Particles in a Vessel Phantom by Cavitation-Enhanced Acoustic Streaming

PubMed Central

Maxwell, Adam D.; Park, Simone; Vaughan, Benjamin L.; Cain, Charles A.; Grotberg, James B.; Xu, Zhen

2014-01-01

Cavitation clouds generated by short, high-amplitude, focused ultrasound pulses were previously observed to attract, trap, and erode thrombus fragments in a vessel phantom. This phenomenon may offer a noninvasive method to capture and eliminate embolic fragments flowing through the bloodstream during a cardiovascular intervention. In this article, the mechanism of embolus trapping was explored by particle image velocimetry (PIV). PIV was used to examine the fluid streaming patterns generated by ultrasound in a vessel phantom with and without crossflow of blood-mimicking fluid. Cavitation enhanced streaming, which generated fluid vortices adjacent to the focus. The focal streaming velocity, uf, was as high as 120 cm/s, while mean crossflow velocities, uc, were imposed up to 14 cm/s. When a solid particle 3-4 mm diameter was introduced into crossflow, it was trapped near the focus. Increasing uf promoted particle trapping while increasing uc promoted particle escape. The maximum crossflow Reynolds number at which particles could be trapped, Rec, was approximately linear with focal streaming number, Ref, i.e. Rec = 0.25Ref + 67.44 (R2=0.76) corresponding to dimensional velocities uc=0.084uf + 3.122 for 20 < uf < 120 cm/s. The fluidic pressure map was estimated from PIV and indicated a negative pressure gradient towards the focus, trapping the embolus near this location. PMID:25109407

CO2 convective dissolution controlled by temporal changes in free-phase CO2 properties

NASA Astrophysics Data System (ADS)

Jafari Raad, S. M.; Emami-Meybodi, H.; Hassanzadeh, H.

2017-12-01

Understanding the factors that control CO2 convective dissolution, which is one of the permanent trapping mechanisms, in the deep saline aquifer is crucial in the long-term fate of the injected CO2. The present study investigates the effects of temporal changes in the solubility of CO2 at the free-phase CO2/brine interface on the onset of natural convection and the subsequent convective mixing by conducting linear stability analyses (LSA) and direct numerical simulations (DNS). A time-dependent concentration boundary is considered for the free-phase CO2/brine interface where the CO2 concentration first decreases with the time and then remains constant. The LSA results show that the temporal variation in the concentration increases the onset of natural convection up to two orders of magnitude. In addition, the critical Rayleigh number significantly increases as CO2 concentration decreases. In other words, size and pressure of the injected CO2 affect the commencement of convective mixing. Based on LSA results, several scaling relations are proposed to correlate critical Rayleigh number, critical time, and its corresponding wavenumbers with time-dependent boundary's parameters, such as concentration decline rate and equilibrium concentration ratio. The DNS results reveal that the convective fingering patterns are significantly influenced by the variation of CO2 concentration at the interface. These findings improve our understanding of CO2 solubility trapping and are particularly important in estimation of potential storage capacity, risk assessment, and storage sites characterization and screening. Keywords: CO2 sequestration; natural convection; solubility trapping; time-dependent boundary condition; numerical simulation; stability analysis

Sustainable Remediation for Enhanced NAPL Recovery from Groundwater

NASA Astrophysics Data System (ADS)

Javaher, M.

2012-12-01

Sustainable remediation relates to the achievement of balance between environmental, social, and economic elements throughout the remedial lifecycle. A significant contributor to this balance is the use of green and sustainable technologies which minimize environmental impacts, while maximizing social and economic benefits of remedial implementation. To this end, a patented mobile vapor energy generation (VEG) technology has been developed targeting variable applications, including onsite soil remediation for unrestricted reuse and enhanced non-aqueous phase liquid (NAPL) recover at the water table. At the core of the mobile VEG technology is a compact, high efficiency vapor generator, which utilizes recycled water and propane within an entirely enclosed system to generate steam as high as 1100°F. Operating within a fully enclosed system and capturing all heat that is generated within this portable system, the VEG technology eliminates all emissions to the atmosphere and yields an undetected carbon footprint with resulting carbon dioxide concentrations that are below ambient levels. Introduction of the steam to the subsurface via existing wells results in a desired change in the NAPL viscosity and the interfacial tension at the soil, water, NAPL interface; in turn, this results in mobilization and capture of the otherwise trapped, weathered NAPL. Approved by the California Air Resources Control Board (and underlying Air Quality Management Districts) and applied in California's San Joaquin Valley, in-well heating of NAPLs trapped at the water table using the VEG technology has proven as effective as electrical resistivity heating (ERH) in changing the viscosity of and mobilizing NAPLs in groundwater in support of recovery, but has achieved these results while minimizing the remedial carbon footprint by 90%, reducing energy use by 99%, and reducing remedial costs by more than 95%. NAPL recovery using VEG has also allowed for completion of source removal historically stalled, thereby eliminating ongoing and future groundwater impacts; in turn, this has increased project efficiency and stakeholder satisfaction by as much as 100%.

Gene trap and gene inversion methods for conditional gene inactivation in the mouse

PubMed Central

Xin, Hong-Bo; Deng, Ke-Yu; Shui, Bo; Qu, Shimian; Sun, Qi; Lee, Jane; Greene, Kai Su; Wilson, Jason; Yu, Ying; Feldman, Morris; Kotlikoff, Michael I.

2005-01-01

Conditional inactivation of individual genes in mice using site-specific recombinases is an extremely powerful method for determining the complex roles of mammalian genes in developmental and tissue-specific contexts, a major goal of post-genomic research. However, the process of generating mice with recombinase recognition sequences placed at specific locations within a gene, while maintaining a functional allele, is time consuming, expensive and technically challenging. We describe a system that combines gene trap and site-specific DNA inversion to generate mouse embryonic stem (ES) cell clones for the rapid production of conditional knockout mice, and the use of this system in an initial gene trap screen. Gene trapping should allow the selection of thousands of ES cell clones with defined insertions that can be used to generate conditional knockout mice, thereby providing extensive parallelism that eliminates the time-consuming steps of targeting vector construction and homologous recombination for each gene. PMID:15659575

Single-beam, dark toroidal optical traps for cold atoms

NASA Astrophysics Data System (ADS)

Fatemi, Fredrik K.; Olson, Spencer E.; Bashkansky, Mark; Dutton, Zachary; Terraciano, Matthew

2007-02-01

We demonstrate the generation of single-beam dark toroidal optical intensity distributions, which are of interest for neutral atom storage and atom interferometry. We demonstrate experimentally and numerically optical potentials that contain a ring-shaped intensity minimum, bounded in all directions by higher intensity. We use a spatial light modulator to alter the phase of an incident laser beam, and analyze the resulting optical propagation characteristics. For small toroidal traps (< 50 μm diameter), we find an optimal superposition of Laguerre-Gaussian modes that allows the formation of single-beam toroidal traps. We generate larger toroidal bottle traps by focusing hollow beams with toroidal lenses imprinted onto the spatial light modulator.

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk

2015-03-02

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes ofmore » both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.« less

Magnetic Compensation for Second-Order Doppler Shift in LITS

NASA Technical Reports Server (NTRS)

Burt, Eric; Tjoelker, Robert

2008-01-01

The uncertainty in the frequency of a linear-ion-trap frequency standard (LITS) can be reduced substantially by use of a very small magnetic inhomogeneity tailored to compensate for the residual second-order Doppler shift. An effect associated with the relativistic time dilatation, one cause of the second-order Doppler shift, is ion motion that is attributable to the trapping radio-frequency (RF)electromagnetic field used to trap ions. The second-order Doppler shift is reduced by using a multi-pole trap; however it is still the largest source of systematic frequency shift in the latest generation of LITSs, which are among the most stable clocks in the world. The present compensation scheme reduces the frequency instability of the affected LITS to about a tenth of its previous value. The basic principles of prior generation LITSs were discussed in several prior NASA Tech Briefs articles. Below are recapitulated only those items of basic information necessary to place the present development in context. A LITS includes a microwave local oscillator, the frequency of which is stabilized by comparison with the frequency of the ground state hyperfine transition of 199Hg+ ions. The comparison involves a combination of optical and microwave excitation and interrogation of the ions in a linear ion trap in the presence of a nominally uniform magnetic field. In the current version of the LITS, there are two connected traps (see figure): (1) a quadrupole trap wherein the optical excitation and measurement take place and (2) a 12-pole trap (denoted the resonance trap), wherein the microwave interrogation takes place. The ions are initially loaded into the quadrupole trap and are thereafter shuttled between the two traps. Shuttling ions into the resonance trap allows sensitive microwave interrogation to take place well away from loading interference. The axial magnetic field for the resonance trap is generated by an electric current in a finely wound wire coil surrounded by magnetic shields. In the quadrupole and 12-pole traps, the potentials are produced by RF voltages applied to even numbers (4 and 12, respectively) of parallel rods equally spaced around a circle. The polarity of the voltage on each rod is opposite that of the voltage on the adjacent rod. As a result, the amplitude of the RF trapping field is zero along the centerline and increases, with radius, to a maximum value near the rods.

Seasonal dynamics of three insect pests in the cabbage field in central Slovenia.

PubMed

Trdan, Stanislav; Vidrih, Matej; Bobnar, Aleksander

2008-01-01

From the beginning of April until the beginning of November 2006, a seasonal dynamics of three harmful insect species--Swede midge (Contarinia nasturtii [Kieffer], Diptera, Cecidomyiidae), flea beetles (Phyllotreta spp., Coleoptera, Chrysomelidae), and diamondback moth (Plutella xylostella [L.], Lepidoptera, Plutellidae)--was investigated at the Laboratory Field of the Biotechnical Faculty in Ljubljana (Slovenia). The males were monitored with pheromone traps; the males of Swede midge were trapped with the traps of Swiss producer (Agroscope FAW, Wädenswill), while the adult flea beetles (trap type KLP+) and diamondback moths (trap type RAG) were trapped with the Hungarian traps (Plant Protection Institute, Hungarian Academy of Sciences). The pheromone capsules were changed in 4-week intervals, while the males were counted on about every 7th day. The first massive occurrence of diamondback moth (1.6 males/trap/day) was established in the second 10 days period of April, and the pest remained active until the 2nd 10 days period of September. The adults were the most numerous in the period between the end of May until the middle of June, but even then their number did not exceed three males caught per day. In the first 10 days period of May, the first adult flea beetles were recorded in the pheromone traps, while their notable number (0.8 males/trap/day) was stated in the third 10 days period of May. Absolutely the highest number of the beetles was recorded in the second (19 adults/trap/day) and in the third (25 adults/trap/day) 10 days of July, and the pest occurred until the beginning of October. The first massive occurrence of Swede midge (0.4 males/trap/day) was established in the second 10 days period of May, while the highest number of males (8/trap/day) were caught in the second 10 days period of July. In the third 10 days period of October, the last adults were found in the traps. Based on the results of monitoring of three cabbage insect pests we ascertained that in the central Slovenia the Swede midge has 3-4 generations, the flea beetles has 1-2 generations, and the diamondback moth has 4 generations.

Site-specific detection of radicals on α-lactalbumin after a riboflavin-sensitized reaction, detected by immuno-spin trapping, ESR, and MS.

PubMed

Dalsgaard, Trine K; Triquigneaux, Mathilde; Deterding, Leesa; Summers, Fiona; Ranguelova, Kalina; Mortensen, Grith; Mason, Ronald P

2013-01-16

Free radicals and other oxidation products were characterized on α-lactalbumin with electron spin resonance (ESR), immuno-spin trapping, and mass spectrometry (MS) after riboflavin-mediated oxidation. Radicals were detected using the spin trap 5,5-dimethyl-1-pyrroline N-oxide (DMPO) in immuno-spin trapping with both enzyme-linked immunosorbent assay (ELISA) and Western blotting and further characterized with mass spectrometry. A DMPO-trapped radical was identified at His68 and another at one of the tyrosine residues, Tyr50 or Tyr36, respectively, generated by a type II or I mechanism. Not all tyrosyl radicals were trapped, as the secondary oxidation product, 3,4-dihydroxyphenylalanine (DOPA), was detected by mass spectrometry at Tyr18 and Tyr50. A further oxidation of DOPA resulted in the DOPA o-semiquinone radical, which was characterized by ESR. Both surface exposure and the neighboring residues in the local environment of the tertiary structure of α-lactalbumin seem to play a role in the generation of DMPO trapped radicals and secondary oxidation products.

Interfacing Lab-on-a-Chip Embryo Technology with High-Definition Imaging Cytometry.

PubMed

Zhu, Feng; Hall, Christopher J; Crosier, Philip S; Wlodkowic, Donald

2015-08-01

To spearhead deployment of zebrafish embryo biotests in large-scale drug discovery studies, automated platforms are needed to integrate embryo in-test positioning and immobilization (suitable for high-content imaging) with fluidic modules for continuous drug and medium delivery under microperfusion to developing embryos. In this work, we present an innovative design of a high-throughput three-dimensional (3D) microfluidic chip-based device for automated immobilization and culture and time-lapse imaging of developing zebrafish embryos under continuous microperfusion. The 3D Lab-on-a-Chip array was fabricated in poly(methyl methacrylate) (PMMA) transparent thermoplastic using infrared laser micromachining, while the off-chip interfaces were fabricated using additive manufacturing processes (fused deposition modelling and stereolithography). The system's design facilitated rapid loading and immobilization of a large number of embryos in predefined clusters of traps during continuous microperfusion of drugs/toxins. It was conceptually designed to seamlessly interface with both upright and inverted fluorescent imaging systems and also to directly interface with conventional microtiter plate readers that accept 96-well plates. Compared with the conventional Petri dish assays, the chip-based bioassay was much more convenient and efficient as only small amounts of drug solutions were required for the whole perfusion system running continuously over 72 h. Embryos were spatially separated in the traps that assisted tracing single embryos, preventing interembryo contamination and improving imaging accessibility.

Long-Range Attractive and Repulsive Interactions between Colloidal Particles at the Air/Water Interface

NASA Astrophysics Data System (ADS)

Gómez-Guzmán, Oscar; Ruiz-García, Jaime

2001-03-01

In the last few years there has been evidence of long-range attractive interactions between colloidal particles trapped between glass plates, where the plates separation is a few particle’s diameter.[1,2,3] In these experiments it is believe that the glass walls play an important role for the observed attractions. Colloidal particles trapped at the air water interface show the formation of different 2-D colloidal patterns such as foams, clusters and chains,[4,5,6,7] whose formation can be taken as an evidence of long range attractive interaction. Here, we present measurements of the pair interaction potential between 0.5 µm colloidal particles at the air/water interface. The potential shows an attractive secondary minimum at about 1.9s, where s is the particle’s diameter, and a secondary repulsive maximum at longer distances. Surprisingly, the position of the secondary well is at a position similar to those found on the colloidal systems trapped between glass plates. It is possible that in our colloidal system the interface plays the role of a glass plate. However, we do not have a clear explanation on the origin of the attractive component of the interaction potential. 1. G. M. Kepler and S. Fraden, Phys. Rev. Lett. 73, 356 (1994) 2. M. D. Carbajal-Tinoco, F. Castro-Roman and J. L. Arauz-Lara, Phys. Rev. E 53, 3745 (1996) 3. J. C. Croker and D. G. Grier, Phys. Rev. Lett. 77, 1897 (1996) 4. J. Ruiz-Garcia, R. Gámez-Corrales and B. I. Ivlev, Physica A 236, 97 (1997) 5. J. Ruiz-Garcia, R. Gámez-Corrales and B. I. Ivlev, Phys. Rev. E 58, 660 (1998) 6. J. Ruiz-Garcia and B. I. Ivlev, Molec. Phys. 95, 371 (1998) 7. S. J. Mejia-Rosales, R. Gamez-Corrales, B. I. Ivlev and J. Ruiz-Garcia, Physica A 276, 30 (2000)

Noncontact evaluation for interface states by photocarrier counting

NASA Astrophysics Data System (ADS)

Furuta, Masaaki; Shimizu, Kojiro; Maeta, Takahiro; Miyashita, Moriya; Izunome, Koji; Kubota, Hiroshi

2018-03-01

We have developed a noncontact measurement method that enables in-line measurement and does not have any test element group (TEG) formation. In this method, the number of photocarriers excited from the interface states are counted which is called “photocarrier counting”, and then the energy distribution of the interface states density (D it) is evaluated by spectral light excitation. In our previous experiment, the method used was a preliminary contact measurement method at the oxide on top of the Si wafer. We developed, at this time, a D it measurement method as a noncontact measurement with a gap between the probes and the wafer. The shallow trench isolation (STI) sidewall has more localized interface states than the region under the gate electrode. We demonstrate the noncontact measurement of trapped carriers from interface states using wafers of three different crystal plane orientations. The demonstration will pave the way for evaluating STI sidewall interface states in future studies.

films on silicon at different annealing temperatures

NASA Astrophysics Data System (ADS)

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-01

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density ( Q f) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q f can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Q f obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Q f. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiO x /Si interface region decreased with increased temperature. Measurement results of Q f proved that the Al vacancy of the bulk film may not be related to Q f. The defect density in the SiO x region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

NASA Astrophysics Data System (ADS)

Liu, Chen; Lü, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

2018-06-01

Interfacial and electrical properties were investigated on metal-oxidesemiconductor capacitors (MOSCAPs) fabricated with bilayer ZnO/ZrO2 films by atomic layer deposition (ALD) on p-In0.2Ga0.8As substrates. The ZnO passivated In0.2Ga0.8As MOSCAPs have exhibited significantly improved capacitance-voltage (C-V) characteristics with the suppressed "stretched out" effect, increased accumulation capacitance and reduced accumulation frequency dispersion as well as the lower gate leakage current. In addition, the interface trap density (Dit) estimated by the Terman method was decreased dramatically for ZnO passivated p-In0.2Ga0.8As. The inherent mechanism is attributed to the fact that an ultrathin ZnO IPL employed by ALD prior to ZrO2 dielectric deposition can effectively suppress the formation of defect-related low-k oxides and As-As dimers at the interface, thus effectively improving the interface quality by largely removing the border traps aligned near the valence band edge of the p-In0.2Ga0.8As substrate.

Mass spectrometer characterization of halogen gases in air at atmospheric pressure.

PubMed

Ivey, Michelle M; Foster, Krishna L

2005-03-01

We have developed a new interface for a commercial ion trap mass spectrometer equipped with APCI capable of real-time measurements of gaseous compounds with limits of detection on the order of pptv. The new interface has been tested using the detection of Br2 and Cl2 over synthetic seawater ice at atmospheric pressure as a model system. A mechanical pump is used to draw gaseous mixtures through a glass manifold into the corona discharge area, where the molecules are ionized. Analysis of bromine and chlorine in dry air show that ion intensity is affected by the pumping rate and the position of the glass manifold. The mass spectrometer signals for Br2 are linear in the 0.1-10.6 ppbv range, and the estimated 3sigma detection limit is 20 pptv. The MS signals for Cl2 are linear in the 0.2-25 ppbv range, and the estimated 3sigma detection limit is 1 ppbv. This new interface advances the field of analytical chemistry by introducing a practical modification to a commercially available ion trap mass spectrometer that expands the available methods for performing highly specific and sensitive measurements of gases in air at atmospheric pressure.

Kinetic transition in the order-disorder transformation at a solid/liquid interface

NASA Astrophysics Data System (ADS)

Galenko, P. K.; Nizovtseva, I. G.; Reuther, K.; Rettenmayr, M.

2018-01-01

Phase-field analysis for the kinetic transition in an ordered crystal structure growing from an undercooled liquid is carried out. The results are interpreted on the basis of analytical and numerical solutions of equations describing the dynamics of the phase field, the long-range order parameter as well as the atomic diffusion within the crystal/liquid interface and in the bulk crystal. As an example, the growth of a binary A50B50 crystal is described, and critical undercoolings at characteristic changes of growth velocity and the long-range order parameter are defined. For rapidly growing crystals, analogies and qualitative differences are found in comparison with known non-equilibrium effects, particularly solute trapping and disorder trapping. The results and model predictions are compared qualitatively with results of the theory of kinetic phase transitions (Chernov 1968 Sov. Phys. JETP 26, 1182-1190) and with experimental data obtained for rapid dendritic solidification of congruently melting alloy with order-disorder transition (Hartmann et al. 2009 Europhys. Lett. 87, 40007 (doi:10.1209/0295-5075/87/40007)). This article is part of the theme issue `From atomistic interfaces to dendritic patterns'.

Electron Trapping and Charge Transport by Large Amplitude Whistlers

NASA Technical Reports Server (NTRS)

Kellogg, P. J.; Cattell, C. A.; Goetz, K.; Monson, S. J.; Wilson, L. B., III

2010-01-01

Trapping of electrons by magnetospheric whistlers is investigated using data from the Waves experiment on Wind and the S/WAVES experiment on STEREO. Waveforms often show a characteristic distortion which is shown to be due to electrons trapped in the potential of the electrostatic part of oblique whistlers. The density of trapped electrons is significant, comparable to that of the unperturbed whistler. Transport of these trapped electrons to new regions can generate potentials of several kilovolts, Trapping and the associated potentials may play an important role in the acceleration of Earth's radiation belt electrons.

Swimming trajectories of a three-sphere microswimmer near a wall

NASA Astrophysics Data System (ADS)

Daddi-Moussa-Ider, Abdallah; Lisicki, Maciej; Hoell, Christian; Löwen, Hartmut

2018-04-01

The hydrodynamic flow field generated by self-propelled active particles and swimming microorganisms is strongly altered by the presence of nearby boundaries in a viscous flow. Using a simple model three-linked sphere swimmer, we show that the swimming trajectories near a no-slip wall reveal various scenarios of motion depending on the initial orientation and the distance separating the swimmer from the wall. We find that the swimmer can either be trapped by the wall, completely escape, or perform an oscillatory gliding motion at a constant mean height above the wall. Using a far-field approximation, we find that, at leading order, the wall-induced correction has a source-dipolar or quadrupolar flow structure where the translational and angular velocities of the swimmer decay as inverse third and fourth powers with distance from the wall, respectively. The resulting equations of motion for the trajectories and the relevant order parameters fully characterize the transition between the states and allow for an accurate description of the swimming behavior near a wall. We demonstrate that the transition between the trapping and oscillatory gliding states is first order discontinuous, whereas the transition between the trapping and escaping states is continuous, characterized by non-trivial scaling exponents of the order parameters. In order to model the circular motion of flagellated bacteria near solid interfaces, we further assume that the spheres can undergo rotational motion around the swimming axis. We show that the general three-dimensional motion can be mapped onto a quasi-two-dimensional representational model by an appropriate redefinition of the order parameters governing the transition between the swimming states.

Radio-Frequency Plasma Cleaning of a Penning Malmberg Trap

NASA Technical Reports Server (NTRS)

Sims, William Herbert, III; Martin, James; Pearson, J. Boise; Lewis, Raymond

2005-01-01

Radio-frequency-generated plasma has been demonstrated to be a promising means of cleaning the interior surfaces of a Penning-Malmberg trap that is used in experiments on the confinement of antimatter. {Such a trap was reported in Modified Penning-Malmberg Trap for Storing Antiprotons (MFS-31780), NASA Tech Briefs, Vol. 29, No. 3 (March 2005), page 66.} Cleaning of the interior surfaces is necessary to minimize numbers of contaminant atoms and molecules, which reduce confinement times by engaging in matter/antimatter-annihilation reactions with confined antimatter particles. A modified Penning-Malmberg trap like the one described in the cited prior article includes several collinear ring electrodes (some of which are segmented) inside a tubular vacuum chamber, as illustrated in Figure 1. During operation of the trap, a small cloud of charged antiparticles (e.g., antiprotons or positrons) is confined to a spheroidal central region by means of a magnetic field in combination with DC and radiofrequency (RF) electric fields applied via the electrodes. In the present developmental method of cleaning by use of RF-generated plasma, one evacuates the vacuum chamber, backfills the chamber with hydrogen at a suitable low pressure, and uses an RF-signal generator and baluns to apply RF voltages to the ring electrodes. Each ring is excited in the polarity opposite that of the adjacent ring. The electric field generated by the RF signal creates a discharge in the low-pressure gas. The RF power and gas pressure are adjusted so that the plasma generated in the discharge (see Figure 2) physically and chemically attacks any solid, liquid, and gaseous contaminant layers on the electrode surfaces. The products of the physical and chemical cleaning reactions are gaseous and are removed by the vacuum pumps.

Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Kwangwook; Ju, Gunwu; Na, Byung Hoon

We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.

Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe2.

PubMed

Liu, Chunsen; Yan, Xiao; Wang, Jianlu; Ding, Shijin; Zhou, Peng; Zhang, David Wei

2017-05-01

Atomic crystal charge trap memory, as a new concept of nonvolatile memory, possesses an atomic level flatness interface, which makes them promising candidates for replacing conventional FLASH memory in the future. Here, a 2D material WSe 2 and a 3D Al 2 O 3 /HfO 2 /Al 2 O 3 charge-trap stack are combined to form a charge-trap memory device with a separation of control gate and memory stack. In this device, the charges are erased/written by built-in electric field, which significantly enhances the write speed to 1 µs. More importantly, owing to the elaborate design of the energy band structure, the memory only captures electrons with a large electron memory window over 20 V and trap selectivity about 13, both of them are the state-of-the-art values ever reported in FLASH memory based on 2D materials. Therefore, it is demonstrated that high-performance charge trap memory based on WSe 2 without the fatal overerase issue in conventional FLASH memory can be realized to practical application. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microfluidic ultralow interfacial tensiometry with magnetic particles.

PubMed

Tsai, Scott S H; Wexler, Jason S; Wan, Jiandi; Stone, Howard A

2013-01-07

We describe a technique that measures ultralow interfacial tensions using paramagnetic spheres in a co-flow microfluidic device designed with a magnetic section. Our method involves tuning the distance between the co-flowing interface and the magnet's center, and observing the behavior of the spheres as they approach the liquid-liquid interface-the particles either pass through or are trapped by the interface. Using threshold values of the magnet-to-interface distance, we make estimates of the two-fluid interfacial tension. We demonstrate the effectiveness of this technique for measuring very low interfacial tensions, O(10(-6)-10(-5)) N m(-1), by testing solutions of different surfactant concentrations, and we show that our results are comparable with measurements made using a spinning drop tensiometer.

Acoustic cavity transducers for the manipulation of cells and biomolecules

NASA Astrophysics Data System (ADS)

Tovar, Armando; Patel, Maulik; Lee, Abraham P.

2010-02-01

A novel fluidic actuator that is simple to fabricate, integrate, and operate is demonstrated for use within microfluidic systems. The actuator is designed around the use of trapped air bubbles in lateral cavities and the resultant acoustic streaming generated from an outside acoustic energy source. The orientation of the lateral cavities to the main microchannel is used to control the bulk fluid motion within the device. The first order flow generated by the oscillating bubble is used to develop a pumping platform that is capable of driving fluid within a chip. This pump is integrated into a recirculation immunoassay device for enhanced biomolecule binding through fluid flow for convection limited transport. The recirculation system showed an increase in binding site concentration when compared with traditional passive and flow-through methods. The acoustic cavity transducer has also been demonstrated for application in particle switching. Bursts of acoustic energy are used to generate a second order streaming pattern near the cavity interface to drive particles away or towards the cavity. The use of this switching mechanism is being extended to the application of sorting cells and other particles within a microfluidic system.

Helium sequestration at nanoparticle-matrix interfaces in helium + heavy ion irradiated nanostructured ferritic alloys

DOE PAGES

Parish, Chad M.; Unocic, Kinga A.; Tan, Lizhen; ...

2016-10-24

Here we irradiated four ferritic alloys with energetic Fe and He ions: one castable nanostructured alloy (CNA) containing Ti-W-Ta-carbides, and three nanostructured ferritic alloys (NFAs). The NFAs were: 9Cr containing Y-Ti-O nanoclusters, and two Fe-12Cr-5Al NFAs containing Y-Zr-O or Y-Hf-O clusters. All four were subjected to simultaneous dual-beam Fe + He ion implantation (650 °C, ~50 dpa, ~15 appm He/dpa), simulating fusion-reactor conditions. Examination using scanning/transmission electron microscopy (STEM) revealed high-number-density helium bubbles of ~8 nm, ~10 21 m -3 (CNA), and of ~3 nm, 10 23 m -3 (NFAs). STEM combined with multivariate statistical analysis data mining suggests thatmore » the precipitate-matrix interfaces in all alloys survived ~50 dpa at 650 °C and serve as effective helium trapping sites. All alloys appear viable structural material candidates for fusion or advanced fission energy systems. Finally, among these developmental alloys the NFAs appear to sequester the helium into smaller bubbles and away from the grain boundaries more effectively than the early-generation CNA.« less

Application of salicylic acid dosimetry to evaluate hydrodynamic cavitation as an advanced oxidation process.

PubMed

Arrojo, S; Nerín, C; Benito, Y

2007-03-01

The generation of OH* radicals inside hydrodynamic cavitation bubbles was monitored using a salicylic acid dosimeter. The reaction of this scavenger with OH* produces 2,5-dihydroxybenzoic acid (2,5-DHB) and, to a lesser degree, 2,3-DHB. The former, is a specific reaction product that can be determined with a very high sensitivity using HPLC-IF. This method has been applied to study the influence of the flow-rate and the solution pH for a given cavitation chamber geometry. The salicylic dosimetry has proven especially suitable for the characteristic time scales of hydrodynamic cavitation (higher than those of ultrasonic cavitation), which usually gives rise to recombination of radicals before they can reach the liquid-phase. Working at low pH the hydrophobic salicylic acid migrates to the gas-liquid interface and reacts with the OH* radicals, increasing the trapping efficiency of the dosimeter. Hydrodynamic cavitation works as a very low frequency sonochemical reactor, and therefore its potential as an Advanced Oxidation Process might be limited to reactions at the gas-liquid interface and inner bubble (i.e. with volatiles and/or hydrophobic substances).

The structure of the human ABC transporter ABCG2 reveals a novel mechanism for drug extrusion.

PubMed

Khunweeraphong, Narakorn; Stockner, Thomas; Kuchler, Karl

2017-10-23

The human ABC transporter ABCG2 (Breast Cancer Resistance Protein, BCRP) is implicated in anticancer resistance, in detoxification across barriers and linked to gout. Here, we generate a novel atomic model of ABCG2 using the crystal structure of ABCG5/G8. Extensive mutagenesis verifies the structure, disclosing hitherto unrecognized essential residues and domains in the homodimeric ABCG2 transporter. The elbow helix, the first intracellular loop (ICL1) and the nucleotide-binding domain (NBD) constitute pivotal elements of the architecture building the transmission interface that borders a central cavity which acts as a drug trap. The transmission interface is stabilized by salt-bridge interactions between the elbow helix and ICL1, as well as within ICL1, which is essential to control the conformational switch of ABCG2 to the outward-open drug-releasing conformation. Importantly, we propose that ICL1 operates like a molecular spring that holds the NBD dimer close to the membrane, thereby enabling efficient coupling of ATP hydrolysis during the catalytic cycle. These novel mechanistic data open new opportunities to therapeutically target ABCG2 in the context of related diseases.

Complete spatial and temporal locking in phase-mismatched second-harmonic generation.

PubMed

Fazio, Eugenio; Pettazzi, Federico; Centini, Marco; Chauvet, Mathieu; Belardini, Alessandro; Alonzo, Massimo; Sibilia, Concita; Bertolotti, Mario; Scalora, Micheal

2009-03-02

We experimentally demonstrate simultaneous phase and group velocity locking of fundamental and generated second harmonic pulses in Lithium Niobate, under conditions of material phase mismatch. In phase-mismatched, pulsed second harmonic generation in addition to a reflected signal two forward-propagating pulses are also generated at the interface between a linear and a second order nonlinear material: the first pulse results from the solution of the homogeneous wave equation, and propagates at the group velocity expected from material dispersion; the second pulse is the solution of the inhomogeneous wave equation, is phase-locked and trapped by the pump pulse, and follows the pump trajectory. At normal incidence, the normal and phase locked pulses simply trail each other. At oblique incidence, the consequences can be quite dramatic. The homogeneous pulse refracts as predicted by material dispersion and Snell's law, yielding at least two spatially separate second harmonic spots at the medium's exit. We thus report the first experimental results showing that, at oblique incidence, fundamental and phase-locked second harmonic pulses travel with the same group velocity and follow the same trajectory. This is direct evidence that, at least up to first order, the effective dispersion of the phase-locked pulse is similar to the dispersion of the pump pulse.

Stable structures of microparticles in the electrodynamic trap created by the corona discharge

NASA Astrophysics Data System (ADS)

Vladimirov, V. I.; Deputatova, L. V.; Filinov, V. S.; Lapitsky, D. S.; Pecherkin, V. Ya; Syrovatka, R. A.; Vasilyak, L. M.; Petrov, O. F.

2018-01-01

For the first time the stable structures of microparticles in a dynamic linear trap with corona electrodes have been obtained. The possibility for capturing and confining of microparticles in a linear electrodynamic trap with corona electrodes at atmospheric pressure has been studied experimentally. The corona discharge on the electrodes of the trap was generated by an alternating electric field.

Measurements, modeling, and simulation of semiconductor/gate dielectric defects using random telegraph signals

NASA Astrophysics Data System (ADS)

Nour, Mohamed

Constructing an effective statistical model and a simulation tool that can predict the phenomenon of random telegraph signals (RTS) is the objective of this work. The continuous scaling down of metal oxide -- semiconductor field effect transistors (MOSFETs) makes charging/discharging traps(s) located at the silicon/silicon dioxide interface or deep in the oxide bulk by mobile charge(s) a more pronounced problem for both analog and digital applications. The intent of this work is to develop an RTS statistical model and a simulation tool based on first principles and supported by extensive experimental data. The newly developed RTS statistical model and its simulation tool should be able to replicate and predict the RTS in time and frequency domains. First, room temperature RTS measurements are performed which provide limited information about the trap. They yield the extraction of some trap and RTS characteristics such as average capture and emission times associated with RTS traces, trap position in the oxide with respect to the Si/SiO 2 interface and along the channel with respect to the source, capture cross section, and trap energies in the Si and SiO2 band -- gaps. Variable temperature measurements, on the other hand, yield much more valuable information. Variable temperature RTS measurements from room temperature down to 80 K were performed, with the MOSFET biased from threshold voltage to strong inversion, in the linear and saturation regions. Variable temperature RTS measurements yield the extraction of trap characteristics such as capture cross -- section prefactor, capture and emission activation energies, change in entropy and enthalpy, and relaxation energy associated with a trap from which the nature and origin of a defect center can be identified. The newly developed Random Telegraph Signals Simulation (RTSSIM) is based on several physical principles and mechanisms e.g. (1) capturing and emitting a mobile charge from and to the channel is governed by phonon- assisted- tunneling, (2) traps only within a few kBT of the Fermi energy level are considered electrically active, (3) trap density is taken as U -- shaped in energy in the silicon band-gap, (4) device scalability is accounted for, (5) and temperature dependence of all parameters is considered. RTSSIM reconstructs the RTS traces in time domain from which the power spectral density (PSD) is evaluated. If there is 20 or more active traps, RTSSIM evaluates the PSD from the superposition of the RTS spectra. RTSSIM extracts RTS and trap characteristics from the simulated RTS data and outputs them to MS Excel files for further analyses and study. The novelty of this work is: (1) it is the first time quantum trap states have been accurately assigned to each switching level in a complex RTS corresponding to dependently and independently interacting traps, (2) new physics-based measurement-driven model and simulation tool has been developed for RTS phenomenon in a MOSFET, (3) and it is the first time a species in SiO2 responsible for RTS has been identified through time-domain measurements and extensive analysis using four trap characteristics at the same time.

Curvature-induced capillary interaction of spherical particles at a liquid interface.

PubMed

Würger, Alois

2006-10-01

We consider a liquid interface with different principal curvatures +/-c and find that the mere presence of a spherical particle leads to a deformation field of quadrupolar symmetry; the corresponding "capillary quadrupole moment" is given by the ratio of the particle size and the curvature radius. The resulting pair interaction of nearby particles is anisotropic and favors the formation of aggregates of cubic symmetry. Since the single-particle trapping energy depends quadratically on curvature with a negative prefactor, a curvature gradient induces a lateral force that pushes the particles towards strongly curved regions of the interface. As an illustration we discuss the effects occurring on a catenoid.

Modeling electronic trap state distributions in nanocrystalline anatase

NASA Astrophysics Data System (ADS)

Le, Nam; Schweigert, Igor

The charge transport properties of nanocrystalline TiO2 films, and thus the catalytic performance of devices that incorporate them, are affected strongly by the spatial and energetic distribution of localized electronic trap states. Such traps may arise from a variety of defects: Ti interstitials, O vacancies, step edges at surfaces, and grain boundaries. We have developed a procedure for applying density functional theory (DFT) and density functional tight binding (DFTB) calculations to characterize distributions of localized states arising from multiple types of defects. We have applied the procedure to investigate how the morphologies of interfaces between pairs of attached anatase nanoparticles determine the energies of trap states therein. Our results complement recent experimental findings that subtle changes in the morphology of highly porous TiO2 aerogel networks can have a dramatic effect on catalytic performance, which was attributed to changes in the distribution of trap states. This work was supported by the U.S. Naval Research Laboratory via the National Research Council and by the Office of Naval Research through the U.S. Naval Research Laboratory.

95 MeV oxygen ion irradiation effects on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ke, S. C.; Siddappa, K.

2003-09-01

The N-channel metal oxide semiconductor field effect transistors (MOSFETs) were exposed to 95 MeV oxygen ions, in the fluence range of 5 x 10(10) to 5 x 10(13) ions/cm(2). The influence of ion irradiation on threshold voltage (V-TH), linear drain current (I-DLin), leakage current (I-L), drain conductance (g(D)), transconductance (g(m)), mobility (mu) and drain saturation current (I-DSat) of MOSFETs was studied systematically for various fluence. The V-TH of the irradiated MOSFET was found to decrease significantly after irradiation. The interface (N-it) and oxide trapped charge (N-ot) were estimated from the subthreshold measurements and were found to increase after irradiation. The densities of oxide-trapped (DeltaN(it)) charge in irradiated MOSFETs were found to he higher than those of the interface trapped charge (DeltaN(ot)). The I-DLin and I-Dsat of MOSFETs were also found to decrease significantly after irradiation. Studies on effects of 95 MeV oxygen ion irradiation on g(m), g(D) and mu show a degradation varying front 70 to 75% after irradiation. The mobility degradation coefficients for N-it(alpha(it)) and N-ot(alpha(it)) were estimated. The results of these studies are presented and discussed.

Modeling and Simulation of Capacitance-Voltage Characteristics of a Nitride GaAs Schottky Diode

NASA Astrophysics Data System (ADS)

Ziane, Abderrezzaq; Amrani, Mohammed; Benamara, Zineb; Rabehi, Abdelaziz

2018-06-01

A nitride GaAs Schottky diode has been fabricated by the nitridation of GaAs substrates using a radio frequency discharge nitrogen plasma source with a layer thickness of approximately 0.7 nm of GaN. The capacitance-voltage (C-V) characteristics of the Au/GaN/GaAs structure were investigated at room temperature for different frequencies, ranging from 1 kHz to 1 MHz. The C-V measurements for the Au/GaN/GaAs Schottky diode were found to be strongly dependent on the bias voltage and the frequency. The capacitance curves depict an anomalous peak and a negative capacitance phenomenon, indicating the presence of continuous interface state density behavior. A numerical drift-diffusion model based on the Scharfetter-Gummel algorithm was elaborated to solve a system composed of the Poisson and continuities equations. In this model, we take into account the continuous interface state density, and we have considered exponential and Gaussian distributions of trap states in the band gap. The effects of the GaAs doping concentration and the trap state density are discussed. We deduce the shape and values of the trap states, then we validate the developed model by fitting the computed C-V curves with experimental measurements at low frequency.

Water-induced polaron formation at the pentacene surface: Quantum mechanical molecular mechanics simulations

NASA Astrophysics Data System (ADS)

Cramer, Tobias; Steinbrecher, Thomas; Koslowski, Thorsten; Case, David A.; Biscarini, Fabio; Zerbetto, Francesco

2009-04-01

Water is an omnipresent polar impurity that is expected to be the origin of many electric degradation phenomena observed in organic semiconductors. Here, we describe a microscopic model for polaron formation in the outermost layer of a pentacene crystal due to the polarization of a nearby water layer. The efficient coupling of a classical force field that describes the liquid with a tight-binding model that represents the π system of the organic layer permits the calculation of nanosecond length trajectories. The model predicts that the reorientation of water dipoles stabilizes positive charge carriers on average by 0.6 eV and thus leads to a polaron trap state at the liquid interface. Thermal fluctuations of the water molecules provoke two-dimensional diffusive hopping of the charge carrier parallel to the interface with mobilities of up to 0.6cm2s-1V-1 and lead to an amorphous broadening of the valence-band tail. As a consequence, water-filled nanocavities act as trapping sites in pentacene transistors. Instead, a complete wetting of the organic film is expected to result in fast thermally activated hopping transport. Polaron trapping is thus not expected to be a limiting factor for transistor-based sensors that operate under water.

Automated two-dimensional interface for capillary gas chromatography

DOEpatents

Strunk, M.R.; Bechtold, W.E.

1996-02-20

A multidimensional gas chromatograph (GC) system is disclosed which has wide bore capillary and narrow bore capillary GC columns in series and has a novel system interface. Heart cuts from a high flow rate sample, separated by a wide bore GC column, are collected and directed to a narrow bore GC column with carrier gas injected at a lower flow compatible with a mass spectrometer. A bimodal six-way valve is connected with the wide bore GC column outlet and a bimodal four-way valve is connected with the narrow bore GC column inlet. A trapping and retaining circuit with a cold trap is connected with the six-way valve and a transfer circuit interconnects the two valves. The six-way valve is manipulated between first and second mode positions to collect analyte, and the four-way valve is manipulated between third and fourth mode positions to allow carrier gas to sweep analyte from a deactivated cold trap, through the transfer circuit, and then to the narrow bore GC capillary column for separation and subsequent analysis by a mass spectrometer. Rotary valves have substantially the same bore width as their associated columns to minimize flow irregularities and resulting sample peak deterioration. The rotary valves are heated separately from the GC columns to avoid temperature lag and resulting sample deterioration. 3 figs.

Automated two-dimensional interface for capillary gas chromatography

DOEpatents

Strunk, Michael R.; Bechtold, William E.

1996-02-20

A multidimensional gas chromatograph (GC) system having wide bore capillary and narrow bore capillary GC columns in series and having a novel system interface. Heart cuts from a high flow rate sample, separated by a wide bore GC column, are collected and directed to a narrow bore GC column with carrier gas injected at a lower flow compatible with a mass spectrometer. A bimodal six-way valve is connected with the wide bore GC column outlet and a bimodal four-way valve is connected with the narrow bore GC column inlet. A trapping and retaining circuit with a cold trap is connected with the six-way valve and a transfer circuit interconnects the two valves. The six-way valve is manipulated between first and second mode positions to collect analyte, and the four-way valve is manipulated between third and fourth mode positions to allow carrier gas to sweep analyte from a deactivated cold trap, through the transfer circuit, and then to the narrow bore GC capillary column for separation and subsequent analysis by a mass spectrometer. Rotary valves have substantially the same bore width as their associated columns to minimize flow irregularities and resulting sample peak deterioration. The rotary valves are heated separately from the GC columns to avoid temperature lag and resulting sample deterioration.

Natural user interface as a supplement of the holographic Raman tweezers

NASA Astrophysics Data System (ADS)

Tomori, Zoltan; Kanka, Jan; Kesa, Peter; Jakl, Petr; Sery, Mojmir; Bernatova, Silvie; Antalik, Marian; Zemánek, Pavel

2014-09-01

Holographic Raman tweezers (HRT) manipulates with microobjects by controlling the positions of multiple optical traps via the mouse or joystick. Several attempts have appeared recently to exploit touch tablets, 2D cameras or Kinect game console instead. We proposed a multimodal "Natural User Interface" (NUI) approach integrating hands tracking, gestures recognition, eye tracking and speech recognition. For this purpose we exploited "Leap Motion" and "MyGaze" low-cost sensors and a simple speech recognition program "Tazti". We developed own NUI software which processes signals from the sensors and sends the control commands to HRT which subsequently controls the positions of trapping beams, micropositioning stage and the acquisition system of Raman spectra. System allows various modes of operation proper for specific tasks. Virtual tools (called "pin" and "tweezers") serving for the manipulation with particles are displayed on the transparent "overlay" window above the live camera image. Eye tracker identifies the position of the observed particle and uses it for the autofocus. Laser trap manipulation navigated by the dominant hand can be combined with the gestures recognition of the secondary hand. Speech commands recognition is useful if both hands are busy. Proposed methods make manual control of HRT more efficient and they are also a good platform for its future semi-automated and fully automated work.

Characterization of structural and electrostatic complexity in pentacene thin films by scanning probe microscopy

NASA Astrophysics Data System (ADS)

Puntambekar, Kanan Prakash

The advancement of organic electronics for applications in solar energy conversion, printed circuitry, displays, and solid-state lighting depends upon optimization of structure and properties for a variety of organic semiconductor interfaces. Organic semiconductor/insulator (O/I) and organic-metal (O/M) interfaces, in particular, are critical to the operation of organic thin film transistors (OTFTs) currently being developed for printed flexible electronics. Scanning probe microscopy (SPM) is a powerful tool to isolate and characterize the bottlenecks to charge transport at these interfaces. This thesis establishes a direct correlation between the structural disorder and electrical complexity at these interfaces, using various SPM based methods and discusses the implications of such complexity on device performance. To examine the O/M interfaces, surface potentials of operating pentacene TFTs with two different contact geometries (bottom or top) were mapped by Kelvin probe force microscopy (KFM). The surface potential distribution was used to isolate the potential drops at the source and drain contacts. Simultaneously obtained topography and surface potential maps elucidated the correlation between the morphology and contact resistance at the O/M interface; the bottom contact TFTs were observed to be contact limited at large gate voltages, while the top contact TFTs were not contact limited. A direct correlation between structural defects and electric potential variations at the pentacene and silicon dioxide, a common insulator, is demonstrated. Lateral force microscopy (LFM) generates striking images of the polycrystalline microstructure of a monolayer thick pentacene film, allowing clear visualization of the grain boundary network. Further more, surface potential wells localized at the grain boundaries were observed by KFM, suggesting that the grain boundaries may serve as charge carrier (hole) traps. Line dislocations were also revealed in the second monolayer by chemical etching and SPM and produce strong variations in the surface potential that must affect the interfacial charge conductance. Structural disorder at the O/I and O/M interfaces degrades both injection and transport of charge, and therefore needs to be minimized. Thus both visualization and correlation of structural and electrical complexity at these interfaces have important implications for understanding electrical transport in OTFTs and for defining strategies to improve device performance.

Free-electron maser with high-selectivity Bragg resonator using coupled propagating and trapped modes

NASA Astrophysics Data System (ADS)

Ginzburg, N. S.; Golubev, I. I.; Golubykh, S. M.; Zaslavskii, V. Yu.; Zotova, I. V.; Kaminsky, A. K.; Kozlov, A. P.; Malkin, A. M.; Peskov, N. Yu.; Perel'Shteĭn, É. A.; Sedykh, S. N.; Sergeev, A. S.

2010-10-01

A free-electron maser (FEM) with a double-mirror resonator involving a new modification of Bragg structures operating on coupled propagating and quasi-cutoff (trapped) modes has been studied. The presence of trapped waves in the feedback chain improves the selectivity of Bragg resonators and ensures stable single-mode generation regime at a considerable superdimensionality of the interaction space. The possibility of using the new feedback mechanism has been confirmed by experiments with a 30-GHz FEM pumped by the electron beam of LIU-3000 (JINR) linear induction accelerator, in which narrow-band generation was obtained at a power of ˜10 MW and a frequency close to the cutoff frequency of the trapped mode excited in the input Bragg reflector.

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi

We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situmore » ALD process to avoid the high-temperature-induced degradations.« less

Translational viscous drags of an ellipsoid straddling an interface between two fluids.

PubMed

Boniello, Giuseppe; Stocco, Antonio; Gross, Michel; In, Martin; Blanc, Christophe; Nobili, Maurizio

2016-07-01

We study the dynamics of individual polystyrene ellipsoids of different aspect ratios trapped at the air-water interface. Using particle tracking and in situ vertical scanning interferometry techniques we are able to measure translational drags and the protrusion in air of the ellipsoids. We report that translational drags on the ellipsoid are unexpectedly enhanced: despite the fact that a noticeable part of the ellipsoid is in air, drags are found larger than the bulk one in water.

UIVerify: A Web-Based Tool for Verification and Automatic Generation of User Interfaces

NASA Technical Reports Server (NTRS)

Shiffman, Smadar; Degani, Asaf; Heymann, Michael

2004-01-01

In this poster, we describe a web-based tool for verification and automatic generation of user interfaces. The verification component of the tool accepts as input a model of a machine and a model of its interface, and checks that the interface is adequate (correct). The generation component of the tool accepts a model of a given machine and the user's task, and then generates a correct and succinct interface. This write-up will demonstrate the usefulness of the tool by verifying the correctness of a user interface to a flight-control system. The poster will include two more examples of using the tool: verification of the interface to an espresso machine, and automatic generation of a succinct interface to a large hypothetical machine.

Direct Deposition of Gas Phase Generated Aerosol Gold Nanoparticles into Biological Fluids - Corona Formation and Particle Size Shifts

PubMed Central

Svensson, Christian R.; Messing, Maria E.; Lundqvist, Martin; Schollin, Alexander; Deppert, Knut; Pagels, Joakim H.; Rissler, Jenny; Cedervall, Tommy

2013-01-01

An ongoing discussion whether traditional toxicological methods are sufficient to evaluate the risks associated with nanoparticle inhalation has led to the emergence of Air-Liquid interface toxicology. As a step in this process, this study explores the evolution of particle characteristics as they move from the airborne state into physiological solution. Airborne gold nanoparticles (AuNP) are generated using an evaporation-condensation technique. Spherical and agglomerate AuNPs are deposited into physiological solutions of increasing biological complexity. The AuNP size is characterized in air as mobility diameter and in liquid as hydrodynamic diameter. AuNP:Protein aggregation in physiological solutions is determined using dynamic light scattering, particle tracking analysis, and UV absorption spectroscopy. AuNPs deposited into homocysteine buffer form large gold-aggregates. Spherical AuNPs deposited in solutions of albumin were trapped at the Air-Liquid interface but was readily suspended in the solutions with a size close to that of the airborne particles, indicating that AuNP:Protein complex formation is promoted. Deposition into serum and lung fluid resulted in larger complexes, reflecting the formation of a more complex protein corona. UV absorption spectroscopy indicated no further aggregation of the AuNPs after deposition in solution. The corona of the deposited AuNPs shows differences compared to AuNPs generated in suspension. Deposition of AuNPs from the aerosol phase into biological fluids offers a method to study the protein corona formed, upon inhalation and deposition in the lungs in a more realistic way compared to particle liquid suspensions. This is important since the protein corona together with key particle properties (e.g. size, shape and surface reactivity) to a large extent may determine the nanoparticle effects and possible translocation to other organs. PMID:24086363

Assembling mesoscopic particles by various optical schemes

NASA Astrophysics Data System (ADS)

Fournier, Jean-Marc; Rohner, Johann; Jacquot, Pierre; Johann, Robert; Mias, Solon; Salathé, René-P.

2005-08-01

Shaping optical fields is the key issue in the control of optical forces that pilot the manipulation of mesoscopic polarizable dielectric particles. The latter can be positioned according to endless configurations. The scope of this paper is to review and discuss several unusual designs which produce what we think are among some of the most interesting arrangements. The simplest schemes result from interference between two or several coherent light beams, leading to periodic as well as pseudo-periodic arrays of optical traps. Complex assemblages of traps can be created with holographic-type set-ups; this case is widely used by the trapping community. Clusters of traps can also be configured through interferometric-type set-ups or by generating external standing waves by diffractive elements. The particularly remarkable possibilities of the Talbot effect to generate three-dimensional optical lattices and several schemes of self-organization represent further very interesting means for trapping. They will also be described and discussed. in this paper. The mechanisms involved in those trapping schemes do not require the use of high numerical aperture optics; by avoiding the need for bulky microscope objectives, they allow for more physical space around the trapping area to perform experiments. Moreover, very large regular arrays of traps can be manufactured, opening numerous possibilities for new applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

McDaniel, Jesse G.; Yethiraj, Arun, E-mail: yethiraj@chem.wisc.edu

The diffusion of protons in self-assembled systems is potentially important for the design of efficient proton exchange membranes. In this work, we study proton dynamics in a low-water content, lamellar phase of a sodium-carboxylate gemini surfactant/water system using computer simulations. The hopping of protons via the Grotthuss mechanism is explicitly allowed through the multi-state empirical valence bond method. We find that the hydronium ion is trapped on the hydrophobic side of the surfactant-water interface, and proton diffusion then proceeds by hopping between surface sites. The importance of hydrophobic traps is surprising because one would expect the hydronium ions to bemore » trapped at the charged headgroups. The physics illustrated in this system should be relevant to the proton dynamics in other amphiphilic membrane systems, whenever there exist exposed hydrophobic surface regions.« less

Measuring three-dimensional interaction potentials using optical interference.

PubMed

Mojarad, Nassir; Sandoghdar, Vahid; Krishnan, Madhavi

2013-04-22

We describe the application of three-dimensional (3D) scattering interferometric (iSCAT) imaging to the measurement of spatial interaction potentials for nano-objects in solution. We study electrostatically trapped gold particles in a nanofluidic device and present details on axial particle localization in the presence of a strongly reflecting interface. Our results demonstrate high-speed (~kHz) particle tracking with subnanometer localization precision in the axial and average 2.5 nm in the lateral dimension. A comparison of the measured levitation heights of trapped particles with the calculated values for traps of various geometries reveals good agreement. Our work demonstrates that iSCAT imaging delivers label-free, high-speed and accurate 3D tracking of nano-objects conducive to probing weak and long-range interaction potentials in solution.

Scalable digital hardware for a trapped ion quantum computer

NASA Astrophysics Data System (ADS)

Mount, Emily; Gaultney, Daniel; Vrijsen, Geert; Adams, Michael; Baek, So-Young; Hudek, Kai; Isabella, Louis; Crain, Stephen; van Rynbach, Andre; Maunz, Peter; Kim, Jungsang

2016-12-01

Many of the challenges of scaling quantum computer hardware lie at the interface between the qubits and the classical control signals used to manipulate them. Modular ion trap quantum computer architectures address scalability by constructing individual quantum processors interconnected via a network of quantum communication channels. Successful operation of such quantum hardware requires a fully programmable classical control system capable of frequency stabilizing the continuous wave lasers necessary for loading, cooling, initialization, and detection of the ion qubits, stabilizing the optical frequency combs used to drive logic gate operations on the ion qubits, providing a large number of analog voltage sources to drive the trap electrodes, and a scheme for maintaining phase coherence among all the controllers that manipulate the qubits. In this work, we describe scalable solutions to these hardware development challenges.

Deep-level stereoscopic multiple traps of acoustic vortices

NASA Astrophysics Data System (ADS)

Li, Yuzhi; Guo, Gepu; Ma, Qingyu; Tu, Juan; Zhang, Dong

2017-04-01

Based on the radiation pattern of a planar piston transducer, the mechanisms underlying the generation of axially controllable deep-level stereoscopic multiple traps of acoustic vortices (AV) using sparse directional sources were proposed with explicit formulae. Numerical simulations for the axial and cross-sectional distributions of acoustic pressure and phase were conducted for various ka (product of the wave number and the radius of transducer) values at the frequency of 1 MHz. It was demonstrated that, for bigger ka, besides the main-AV (M-AV) generated by the main lobes of the sources, cone-shaped side-AV (S-AV) produced by the side lobes were closer to the source plane at a relatively lower pressure. Corresponding to the radiation angles of pressure nulls between the main lobe and the side lobes of the sources, vortex valleys with nearly pressure zero could be generated on the central axis to form multiple traps, based on Gor'kov potential theory. The number and locations of vortex valleys could be controlled accurately by the adjustment of ka. With the established eight-source AV generation system, the existence of the axially controllable multiple traps was verified by the measured M-AV and S-AVs as well as the corresponding vortex valleys. The favorable results provided the feasibility of deep-level stereoscopic control of AV and suggested potential application of multiple traps for particle manipulation in the area of biomedical engineering.

Magnetic core shell nanoparticles trapping in a microdevice generating high magnetic gradient.

PubMed

Teste, Bruno; Malloggi, Florent; Gassner, Anne-Laure; Georgelin, Thomas; Siaugue, Jean-Michel; Varenne, Anne; Girault, Hubert; Descroix, Stéphanie

2011-03-07

Magnetic core shell nanoparticles (MCSNPs) 30 nm diameter with a magnetic weight of 10% are usually much too small to be trapped in microfluidic systems using classical external magnets. Here, a simple microchip for efficient MCSNPs trapping and release is presented. It comprises a bed of micrometric iron beads (6-8 μm diameter) packed in a microchannel against a physical restriction and presenting a low dead volume of 0.8 nL. These beads of high magnetic permeability are used to focus magnetic field lines from an external permanent magnet and generate local high magnetic gradients. The nanoparticles magnetic trap has been characterised both by numerical simulations and fluorescent MCSNPs imaging. Numerical simulations have been performed to map both the magnetic flux density and the magnetic force, and showed that MCSNPs are preferentially trapped at the iron bead magnetic poles where the magnetic force is increased by 3 orders of magnitude. The trapping efficiency was experimentally determined using fluorescent MCSNPs for different flow rates, different iron beads and permanent magnet positions. At a flow rate of 100 μL h(-1), the nanoparticles trapping/release can be achieved within 20 s with a preconcentration factor of 4000.

Phosphate sorption and desorption on pyrite in primitive aqueous scenarios: relevance of acidic --> alkaline transitions.

PubMed

de Souza-Barros, Fernando; Braz-Levigard, Raphael; Ching-San, Yonder; Monte, Marisa M B; Bonapace, José A P; Montezano, Viviane; Vieyra, Adalberto

2007-02-01

Phosphate (P(i)) sorption assays onto pyrite in media simulating primeval aquatic scenarios affected by hydrothermal emissions, reveal that acidic conditions favour P(i) sorption whereas mild alkaline media--as well as those simulating sulfur oxidation to SO(2-) (4)--revert this capture process. Several mechanisms relevant to P(i) availability in prebiotic eras are implicated in the modulation of these processes. Those favouring sorption are: (a) hydrophobic coating of molecules, such as acetate that could be formed in the vicinity of hydrothermal vents; (b) water and Mg(2+) bridging in the interface mineral-aqueous media; (c) surface charge neutralization by monovalent cations (Na+ and K+). The increase of both the medium pH and the SO(2-) (4) trapping by the mineral interface would provoke the release of sorbed P(i) due to charge polarization. Moreover it is shown that P(i) self-modulates its sorption, a mechanism that depends on the abundance of SO(2-) (4) in the interface. The relevance of the proposed mechanisms of P(i) capture, release and trapping arises from the need of abundant presence of this molecule for primitive phosphorylations, since--similarly to contemporary aqueous media--inorganic phosphate concentrations in primitive seas should have been low. It is proposed that the presence of sulphide minerals with high affinity to P(i) could have trapped this molecule in an efficient manner, allowing its concentration in specific niches. In these niches, the conditions studied in the present work would have been relevant for its availability in soluble form, specially in primitive insulated systems with pH gradients across the wall.

Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

NASA Astrophysics Data System (ADS)

Ke, Wen-Cheng; Lee, Fang-Wei; Yang, Cheng-Yi; Chen, Wei-Kuo; Huang, Hao-Ping

2015-10-01

This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10-4 Ω cm2 was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 108 cm-2. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (Vo) in the InON nanodots played a crucial role in carrier transport. The fitting I-V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

Stability of an aqueous quadrupole micro-trap

DOE PAGES

Park, Jae Hyun; Krstić, Predrag S.

2012-03-30

Recently demonstrated functionality of an aqueous quadrupole micro- or nano-trap opens a new avenue for applications of the Paul traps, like is confinement of a charged biomolecule which requires water environment for its chemical stability. Besides strong viscosity forces, motion of a charged particle in the aqueous trap is subject to dielectrophoretic and electrophoretic forces. In this study, we describe the general conditions for stability of a charged particle in an aqueous quadrupole trap. We find that for the typical micro-trap parameters, effects of both dielectrophoresis and electrophoresis significantly influence the trap stability. In particular, the aqueous quadrupole trap couldmore » play of a role of a synthetic virtual nanopore for the 3rd generation of DNA sequencing technology.« less

Charge Transfer from Carbon Nanotubes to Silicon in Flexible Carbon Nanotube/Silicon Solar Cells.

PubMed

Li, Xiaokai; Mariano, Marina; McMillon-Brown, Lyndsey; Huang, Jing-Shun; Sfeir, Matthew Y; Reed, Mark A; Jung, Yeonwoong; Taylor, André D

2017-12-01

Mechanical fragility and insufficient light absorption are two major challenges for thin flexible crystalline Si-based solar cells. Flexible hybrid single-walled carbon nanotube (SWNT)/Si solar cells are demonstrated by applying scalable room-temperature processes for the fabrication of solar-cell components (e.g., preparation of SWNT thin films and SWNT/Si p-n junctions). The flexible SWNT/Si solar cells present an intrinsic efficiency ≈7.5% without any additional light-trapping structures. By using these solar cells as model systems, the charge transport mechanisms at the SWNT/Si interface are investigated using femtosecond transient absorption. Although primary photon absorption occurs in Si, transient absorption measurements show that SWNTs also generate and inject excited charge carriers to Si. Such effects can be tuned by controlling the thickness of the SWNTs. Findings from this study could open a new pathway for designing and improving the efficiency of photocarrier generation and absorption for high-performance ultrathin hybrid SWNT/Si solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Particle trapping and manipulation using hollow beam with tunable size generated by thermal nonlinear optical effect

NASA Astrophysics Data System (ADS)

He, Bo; Cheng, Xuemei; Zhang, Hui; Chen, Haowei; Zhang, Qian; Ren, Zhaoyu; Ding, Shan; Bai, Jintao

2018-05-01

We report micron-sized particle trapping and manipulation using a hollow beam of tunable size, which was generated by cross-phase modulation via the thermal nonlinear optical effect in an ethanol medium. The results demonstrated that the particle can be trapped stably in air for hours and manipulated in millimeter range with micrometer-level accuracy by modulating the size of the hollow beam. The merits of flexibility in tuning the beam size and simplicity in operation give this method great potential for the in situ study of individual particles in air.

Surface acceptor states in MBE-grown CdTe layers

NASA Astrophysics Data System (ADS)

Wichrowska, Karolina; Wosinski, Tadeusz; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

2018-04-01

A deep-level hole trap associated with surface defect states has been revealed with deep-level transient spectroscopy investigations of metal-semiconductor junctions fabricated on nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. The trap displayed the hole-emission activation energy of 0.33 eV and the logarithmic capture kinetics indicating its relation to extended defect states at the metal-semiconductor interface. Strong electric-field-induced enhancement of the thermal emission rate of holes from the trap has been attributed to the phonon-assisted tunneling effect from defect states involving very large lattice relaxation around the defect and metastability of its occupied state. Passivation with ammonium sulfide of the CdTe surface, prior to metallization, results in a significant decrease in the trap density. It also results in a distinct reduction in the width of the surface-acceptor-state-induced hysteresis loops in the capacitance vs. voltage characteristics of the metal-semiconductor junctions.

Theoretical Design and Experimental Realization of Quasi Single Electron Enhancement in Plasmonic Catalysis.

PubMed

Wang, Jiale; Alves, Tiago V; Trindade, Fabiane J; de Aquino, Caroline B; Pieretti, Joana C; Domingues, Sergio H; Ando, Romulo A; Ornellas, Fernando R; Camargo, Pedro H C

2015-11-23

By a combination of theoretical and experimental design, we probed the effect of a quasi-single electron on the surface plasmon resonance (SPR)-mediated catalytic activities of Ag nanoparticles. Specifically, we started by theoretically investigating how the E-field distribution around the surface of a Ag nanosphere was influenced by static electric field induced by one, two, or three extra fixed electrons embedded in graphene oxide (GO) next to the Ag nanosphere. We found that the presence of the extra electron(s) changed the E-field distributions and led to higher electric field intensities. Then, we experimentally observed that a quasi-single electron trapped at the interface between GO and Ag NPs in Ag NPs supported on graphene oxide (GO-Ag NPs) led to higher catalytic activities as compared to Ag and GO-Ag NPs without electrons trapped at the interface, representing the first observation of catalytic enhancement promoted by a quasi-single electron. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Broadband light trapping in nanotextured thin film photovoltaic devices

NASA Astrophysics Data System (ADS)

Mennucci, Carlo; Muhammad, M. H.; Hameed, Mohamed Farhat O.; Mohamed, Shaimaa A.; Abdelkhalik, Mohamed S.; Obayya, S. S. A.; Buatier de Mongeot, Francesco

2018-07-01

Substrates with engineered roughness are studied with the aim of achieving broadband and omnidirectional photon harvesting in thin film devices. Light coupling across the interfaces of a photonic device is induced by uniaxial pseudo-periodic gratings formed in a self-organised fashion via de-focused ion beam sputtering (IBS). The optical properties of the textured interfaces are assessed both experimentally and numerically using finite difference time domain (FDTD) algorithm, quantitatively demonstrating the optimal geometries which favour broadband diffuse scattering of radiation across the Vis-NIR spectral range. Thin film amorphous silicon solar cells based on the nanostructured patterns have been numerically studied via FDTD to assess absorption enhancement in comparison to flat reference devices, finding a 25% increase of short-circuit current, in good agreement with the experiment. Similar light trapping experiments performed on prototypical solar cells employing a PTB7:PC61BM organic absorber, allow to extend the general validity of the results to a relevant class of materials in the view of photovoltaic applications.

Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors

NASA Astrophysics Data System (ADS)

Sang, Liwen; Ren, Bing; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

2018-04-01

The capacitance-voltage (C-V) hysteresis in the bidirectional measurements of the p-GaN metal-insulator-semiconductor (MIS) capacitor is suppressed by using a CaF2 dielectric layer and a post annealing treatment. The density of trapped charge states at the CaF2/p-GaN interface is dramatically reduced from 1.3 × 1013 cm2 to 1.1 × 1011/cm2 compared to that of the Al2O3/p-GaN interface with a large C-V hysteresis. It is observed that the disordered oxidized interfacial layer can be avoided by using the CaF2 dielectric. The downward band bending of p-GaN is decreased from 1.51 to 0.85 eV as a result of the low-density oxides-related trap states. Our work indicates that the CaF2 can be used as a promising dielectric layer for the p-GaN MIS structures.

Hybrid entanglement between a trapped ion and a mirror

NASA Astrophysics Data System (ADS)

Corrêa, Clóvis; Vidiella-Barranco, A.

2018-05-01

We present a scheme for cavity-assisted generation of hybrid entanglement between a moving mirror belonging to an optomechanical cavity and a single trapped ion located inside a second cavity. Due to radiation pressure, it is possible to entangle the states of the moving mirror and the corresponding cavity field. Also, by tuning the second cavity field with the internal degrees of freedom of the ion, an entangled state of the cavity field/ion can be independently generated. The fields leaking from each cavity may be then combined in a beam splitter, and following the detection of the outgoing photons by conveniently placed photodetectors, we show that it is possible to generate entangled states of the moving mirror and the single trapped ion's center-of-mass vibration. In our scheme the generated states are hybrid entangled states, in the sense that they are constituted by discrete (Fock) states and continuous variable (coherent) states.

Heterointerface study of InAs/GaSb nanoridge heterostructures grown by metal organic chemical vapor deposition on V-grooved Si (0 0 1) substrates

NASA Astrophysics Data System (ADS)

Lai, Billy; Li, Qiang; Lau, Kei May

2018-02-01

InAs/GaSb nanoridge heterostructures were grown on V-grooved (0 0 1) Si by metal organic chemical vapor deposition. Combining the aspect ratio trapping process and a low temperature GaAs buffer, we demonstrated high quality GaSb nanoridge templates for InAs/GaSb heterostructure growth. Two different interfaces, a transitional GaAsSb and an InSb-like interface, were investigated when growing these heterostructures. A 500 °C growth temperature in conjunction with a GaAsSb interface was determined to produce the optimal interface, properly compensating for the tensile strain accumulated when growing InAs on GaSb. Without the need for a complicated switching sequence, this GaAsSb-like interface utilized at the optimized temperature is the initial step towards InAs/GaSb type II superlattice and other device structures integrated onto Si.

Isothermal relaxation current and microstructure changes of thermally aged polyester films impregnated by epoxy resin

NASA Astrophysics Data System (ADS)

Jiang, Xiongwei; Sun, Potao; Peng, Qingjun; Sima, Wenxia

2018-01-01

In this study, to understand the effect of thermal aging on polymer films degradation, specimens of polyester films impregnated by epoxy resin with different thermal aging temperatures (80 and 130 °C) and aging times (500, 1600, 2400 and 3000 h) are prepared, then charge de-trapping properties of specimens are investigated via the isothermal relaxation current (IRC) measurement, the distributions of trap level and its corresponding density are obtained based on the modified IRC model. It is found that the deep trap density increases remarkably at the beginning of thermal aging (before 1600 h), but it decreases obviously as the aging degree increases. At elevated aging temperature and, in particular considering the presence of air gap between two-layer insulation, the peak densities of deep traps decrease more significant in the late period of aging. It can be concluded that it is the released energy from de-trapping process leads to the fast degradation of insulation. Moreover, after thermal aging, the microstructure changes of crystallinity and molecular structures are analyzed via the x-ray diffraction experiment and Fourier transform infrared spectrometer. The results indicate that the variation of the deep trap density is closely linked with the changes of microstructure, a larger interface of crystalline/amorphous phase, more defects and broken chains caused by thermal aging form higher deep trap density stored in the samples.

A model of optical trapping cold atoms using a metallic nano wire with surface plasmon effect

NASA Astrophysics Data System (ADS)

Thi Phuong Lan, Nguyen; Thi Nga, Do; Viet, Nguyen Ai

2016-06-01

In this work, we construct a new model of optical trapping cold atoms with a metallic nano wire by using surface plasmon effect generated by strong field of laser beams. Using the skin effect, we send a strong oscillated electromagnetic filed through the surface of a metallic nano wire. The local field generated by evanescent effect creates an effective attractive potential near the surface of metallic nano wires. The consideration of some possible boundary and frequency conditions might lead to non-trivial bound state solution for a cold atom. We discus also the case of the laser reflection optical trap with shell-core design, and compare our model with another recent schemes of cold atom optical traps using optical fibers and carbon nanotubes.

Determination of tellurium by hydride generation with in situ trapping flame atomic absorption spectrometry

NASA Astrophysics Data System (ADS)

Matusiewicz, Henryk; Krawczyk, Magdalena

2007-03-01

The analytical performance of coupled hydride generation — integrated atom trap (HG-IAT) atomizer flame atomic absorption spectrometry (FAAS) system was evaluated for determination of Te in reference material (GBW 07302 Stream Sediment), coal fly ash and garlic. Tellurium, using formation of H 2Te vapors, is atomized in air-acetylene flame-heated IAT. A new design HG-IAT-FAAS hyphenated technique that would exceed the operational capabilities of existing arrangements (a water-cooled single silica tube, double-slotted quartz tube or an "integrated trap") was investigated. An improvement in detection limit was achieved compared with using either of the above atom trapping techniques separately. The concentration detection limit, defined as 3 times the blank standard deviation (3 σ), was 0.9 ng mL - 1 for Te. For a 2 min in situ pre-concentration time (sample volume of 2 mL), sensitivity enhancement compared to flame AAS, was 222 fold, using the hydride generation — atom trapping technique. The sensitivity can be further improved by increasing the collection time. The precision, expressed as RSD, was 7.0% ( n = 6) for Te. The designs studied include slotted tube, single silica tube and integrated atom trap-cooled atom traps. The accuracy of the method was verified using a certified reference material (GBW 07302 Stream Sediment) by aqueous standard calibration curves. The measured Te contents of the reference material was in agreement with the information value. The method was successfully applied to the determination of tellurium in coal fly ash and garlic.

Investigation on H-containing shallow trap of hydrogenated TiO2 with in situ Fourier transform infrared diffuse reflection spectroscopy.

PubMed

Han, Bing; Hang Hu, Yun

2017-07-28

A novel technique, high temperature high pressure in situ Fourier transform infrared diffuse reflection spectroscopy, was successfully used to investigate the formation and stability of shallow trap states in P25 TiO 2 nanoparticles. Two types of shallow traps (with and without H atoms) were identified. The H-containing shallow trap can be easily generated by heating in H 2 atmosphere. However, the trap is unstable in vacuum at 600 °C. In contrast, the H-free shallow trap, which can be formed by heating in vacuum, is stable even at 600 °C. The energy gaps between shallow trap states and the conduction band are 0.09 eV for H-containing shallow trap and 0.13 eV for H-free shallow trap, indicating that the H-containing shallow trap state is closer to the conduction band than that without H.

Isocurvature fluctuations through axion trapping by cosmic string wakes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Layek, Biswanath

2005-03-15

We consider wakelike density fluctuations produced by cosmic strings at the quark-hadron transition in the early universe. We show that low momentum axions which are produced through the radiation from the axionic string at an earlier stage, may get trapped inside these wakes due to delayed hadronization in these overdense regions. As the interfaces, bordering the wakes, collapse, the axions pick-up momentum from the walls and finally leave the wake regions. These axions thus can produce large scale isocurvature fluctuations. We have calculated the detailed profile of these axionic density fluctuations and discuss its astrophysical consequences.

Air-stable, solution-processed oxide p-n heterojunction ultraviolet photodetector.

PubMed

Kim, Do Young; Ryu, Jiho; Manders, Jesse; Lee, Jaewoong; So, Franky

2014-02-12

Air-stable solution processed all-inorganic p-n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the interfacial trap-induced charge injection that occurs at the ITO/NiO interface by photogenerated holes trapped in the NiO film. The gain of the detector is controlled by the post-annealing temperature of the solution-processed NiO films, which are studied by X-ray photoelectron spectroscopy (XPS).

Three dimensional touch and vision for the micro-world

NASA Astrophysics Data System (ADS)

Bowman, Richard W.

This thesis describes advances in the holographic technology used to control multiple optical traps (and hence many trapped particles), and improved methods for monitoring the positions and forces involved. The speed with which multiple holographic optical traps can be moved has traditionally been limited by the time taken to calculate holograms, but by using consumer graphics cards and high speed Spatial Light Modulators (SLMs) I have implemented holographic systems fast enough to react to the Brownian motion of trapped particles. Brownian motion can, to some extent, be suppressed by this approach, and it also allows the trap's stiffness to be engineered to balance sensitivity against tight constraint of position. Feedback control using an SLM, rather than the other beam steering technologies that have been employed, is able to react to motion in three dimensions. This requires 3D position measurement, which is provided by the stereo microscopy technique described in Chapter 2. By illuminating and viewing the sample from two different angles it is possible to reconstruct the depth of objects. This is accomplished through a single high numerical aperture microscope objective, the same lens used to focus the trapping laser. In conjunction with a fast CMOS camera, it is possible to track particles with an accuracy of 2-3nm at several thousand frames per second. This allows measurement of forces and displacements within the control loop, that can be fed back to influence the position of the optical traps. This force information can also be relayed to the operator using a force-feedback joystick as detailed in Chapter 7. Interface design is an important part of making technology accessible to scientists from other disciplines; to this end I have also developed a multi-touch tablet application to control optical tweezers. By creating simple, reliable systems and coupling them to an intuitive interface, I have endeavoured to produce developments which are of use to the non-specialist as well as to experts in optical tweezers-a number of which are now available commercially (Section 8.7). These technologies form the basis of a toolkit for working with multi-part probes in optical tweezers, and they should bear fruit in the coming years as a new form of scanning-probe microscopy emerges.

Coupling of ions to superconducting circuits

NASA Astrophysics Data System (ADS)

Moeller, Soenke; Daniilidis, Nikos; Haeffner, Hartmut

2013-05-01

We present experimental progress towards coupling the motion of ion strings to the resonant mode of a superconducting high-quality tank circuit. We consider such a coupling as the first step towards interfacing trapped ions with superconducting qubits. In our demonstration experiment, we aim to reduce the temperature of the resonant mode of the tank circuit by extracting energy from the circuit via laser cooling an ion string. One of the main experimental challenges is to construct a tank circuit with such a high quality factor Q that the ion-resonator coupling exceeds the environment-resonator coupling. Currently, we achieve Q = 60 000 at a frequency of ω = 2 π . 5 . 7 MHz . For this mode, the coupling time-scale to the environment is on the order of 50 Hz. We plan to use a trap with an ion-electrode distance on the order of 100 μm resulting in an ion-resonator coupling of 1kHz. This coupling should reduce the electronic temperature of the resonant mode by a factor of 80 below the ambient temperature. For our trap geometry we expect a minimum trap depth of 50 meV for a trap drive frequency of 52 MHz with a 200 V amplitude. This results radial trap frequencies of 5 . 7 MHz . Research funded by DARPA grant #N66001-12-1-4234.

New Generation of ELF/VLF Wave Injection Experiments for HAARP

NASA Astrophysics Data System (ADS)

Sonwalkar, V. S.; Reddy, A.; Watkins, B. J.

2016-12-01

We present a ray tracing study to investigate the feasibility of a new generation of wave injection experiments from HAARP transmitter (L 4.9). Highly successful whistler mode wave injection experiments from SIPLE station, Antarctica, have established the importance of such experiments to study magnetospheric wave-particle interactions, and for cold and hot plasma diagnostics [Helliwell and Katsufrakis, 1974; Carpenter and Miller, 1976; Sonwalkar et al., 1997]. Modulated heating experiments from HAARP have shown that it is possible to launch ELF/VLF waves into the magnetosphere that can be observed on the ground after one-, two-, and multi-hop ducted propagation [Inan et al., 2004]. Recent research has also shown that ionospheric heating experiments using HAARP can lead to the formation of magnetospheric ducts [e.g. Milikh et al., 2010; Fallen et al., 2011]. Collectively, these results indicate that the HAARP (or similar) transmitter can be used first to form ducts on nearby L shells, and then to inject and trap transmitter generated ELF/VLF waves in those ducts. Ray tracing studies using a model magnetosphere shows that ELF/VLF waves in a few kilohertz range can be trapped in ducts with L shells near the HAARP transmitter. For example, 1.5 kHz waves injected from L shell = 4.9 and altitude = 200 km can be trapped in ducts located within 0.3 L of the transmitter L-shell. The duct parameters needed for ray-trapping are typically duct width dL 0.1-0.3 and duct enhancement factor dNe/Ne 10-20% or more. The location of plasmapause with respect to transmitter plays a role in the nature of trapping. The duct locations and parameters required for trapping ELF/VLF waves inside the ducts are consistent with past observations of ducts generated by the HAARP transmitter. Ray tracing calculations provide trapped wave normal angles, time delays, resonant energetic electron energy, estimates of wave intensity inside the duct, on the ground, and on satellites such DEMETER, Van Allen probe, and planned DSX. We discuss the potential of a new generation of wave injection experiments from HAARP transmitter to investigate: duct and ELF/VLF generation by high power HF transmitters, whistler mode wave propagation and wave particle interactions, and cold and hot plasma diagnostics.

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

PubMed

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-02

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures

PubMed Central

2013-01-01

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C. PMID:23452508

Photoresponse and photo-induced memory effect in the organic field-effect transistor based on AlOX nanoparticles at the interface of semiconductor/dielectric

NASA Astrophysics Data System (ADS)

Cheng, Yunfei; Wang, Wu

2017-10-01

In this work, the photoresponse and photo-induced memory effect were demonstrated in an organic field-effect transistor (OFET) with semiconductor pentacene and SiO2 as the active and gate dielectric layers, respectively. By inserting AlOX nanoparticles (NPs) at the interface of pentacene/SiO2, obvious enhancing photoresponse was obtained in the OFET with the maximum responsivity and photosensitivity of about 15 A/W and 100, respectively. Moreover, the stable photoinduced memory effect was achieved in the OFET, attributing to the photogenerated electrons captured by the interface traps of the AlOX NPs/SiO2.

Internal Photoemission at Interfaces of ALD TaSiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Y Chou, H.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-10-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Heat exchanger bypass system for an absorption refrigeration system

DOEpatents

Reimann, Robert C.

1984-01-01

A heat exchanger bypass system for an absorption refrigeration system is disclosed. The bypass system operates to pass strong solution from the generator around the heat exchanger to the absorber of the absorption refrigeration system when strong solution builds up in the generator above a selected level indicative of solidification of strong solution in the heat exchanger or other such blockage. The bypass system includes a bypass line with a gooseneck located in the generator for controlling flow of strong solution into the bypass line and for preventing refrigerant vapor in the generator from entering the bypass line during normal operation of the refrigeration system. Also, the bypass line includes a trap section filled with liquid for providing a barrier to maintain the normal pressure difference between the generator and the absorber even when the gooseneck of the bypass line is exposed to refrigerant vapor in the generator. Strong solution, which may accumulate in the trap section of the bypass line, is diluted, to prevent solidification, by supplying weak solution to the trap section from a purge system for the absorption refrigeration system.

Partially Ionized Beam Deposition of Silicon-Dioxide and Aluminum Thin Films - Defects Generation.

NASA Astrophysics Data System (ADS)

Wong, Justin Wai-Chow

1987-09-01

Detect formation in SiO_2 and Al thin films and interfaces were studied using a partially ionized beam (PIB) deposition technique. The evaporated species (the deposition material) were partially ionized to give an ion/atom ratio of <=q0.1% and the substrate was biased at 0-5kV during the deposition. The results suggest that due to the ion bombardment, stoichiometric SiO_2 films can be deposited at a low substrate temperature (~300 ^circC) and low oxygen pressure (<=q10^{-4} Torr). Such deposition cannot be achieved using conventional evaporation-deposition techniques. However, traps and mobile ions were observed in the oxide and local melt-down was observed when a sufficiently high electric field was applied to the film. For the PIB Al deposition on the Si substrate, stable Al/Si Schottky contact was formed when the substrate bias was <=q1kV. For a substrate bias of 2.5kV, the capacitance of the Al/Si interface increased dramatically. A model of self-ion implantation with a p-n junction created by the Al^+ ion implantation was proposed and tested to explain the increase of the interface capacitance. Several deep level states at the Al/Si interface were observed using Deep Level Transient Spectroscopy (DLTS) technique when the film was deposited at a bias of 3kV. The PIB Al films deposited on the Si substrate showed unusually strong electromigration resistance under high current density operation. This phenomenon was explained by the highly oriented microstructure of the Al films created by the self-ion bombardment during deposition. These findings show that PIB has potential applications in a number of areas, including low temperature thin film deposition, and epitaxial growth of thin films in the microelectronics thin film industry.

A continuously growing web-based interface structure databank

NASA Astrophysics Data System (ADS)

Erwin, N. A.; Wang, E. I.; Osysko, A.; Warner, D. H.

2012-07-01

The macroscopic properties of materials can be significantly influenced by the presence of microscopic interfaces. The complexity of these interfaces coupled with the vast configurational space in which they reside has been a long-standing obstacle to the advancement of true bottom-up material behavior predictions. In this vein, atomistic simulations have proven to be a valuable tool for investigating interface behavior. However, before atomistic simulations can be utilized to model interface behavior, meaningful interface atomic structures must be generated. The generation of structures has historically been carried out disjointly by individual research groups, and thus, has constituted an overlap in effort across the broad research community. To address this overlap and to lower the barrier for new researchers to explore interface modeling, we introduce a web-based interface structure databank (www.isdb.cee.cornell.edu) where users can search, download and share interface structures. The databank is intended to grow via two mechanisms: (1) interface structure donations from individual research groups and (2) an automated structure generation algorithm which continuously creates equilibrium interface structures. In this paper, we describe the databank, the automated interface generation algorithm, and compare a subset of the autonomously generated structures to structures currently available in the literature. To date, the automated generation algorithm has been directed toward aluminum grain boundary structures, which can be compared with experimentally measured population densities of aluminum polycrystals.

A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnO{sub x}–Al{sub 2}O{sub 3} thin film structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, H. K.; Chen, T. P., E-mail: echentp@ntu.edu.sg; Liu, P.

In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al{sub 2}O{sub 3}) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al{submore » 2}O{sub 3} interface and/or in the Al{sub 2}O{sub 3} layer.« less

Dynamic patterns in a supported lipid bilayer driven by standing surface acoustic waves.

PubMed

Hennig, Martin; Neumann, Jürgen; Wixforth, Achim; Rädler, Joachim O; Schneider, Matthias F

2009-11-07

In the past decades supported lipid bilayers (SLBs) have been an important tool in order to study the physical properties of biological membranes and cells. So far, controlled manipulation of SLBs is very limited. Here we present a new technology to create lateral patterns in lipid membranes controllable in both space and time. Surface acoustic waves (SAWs) are used to generate lateral standing waves on a piezoelectric substrate which create local "traps" in the lipid bilayer and lead to a lateral modulation in lipid concentration. We demonstrate that pattern formation is reversible and does not affect the integrity of the lipid bilayer as shown by extracting the diffusion constant of fluid membranes. The described method could possibly be used to design switchable interfaces for the lateral transport and organization of membrane bound macromolecules to create dynamic bioarrays and control biofilm formation.

Recognition Tunneling

PubMed Central

Lindsay, Stuart; He, Jin; Sankey, Otto; Hapala, Prokop; Jelinek, Pavel; Zhang, Peiming; Chang, Shuai; Huang, Shuo

2010-01-01

Single molecules in a tunnel junction can now be interrogated reliably using chemically-functionalized electrodes. Monitoring stochastic bonding fluctuations between a ligand bound to one electrode and its target bound to a second electrode (“tethered molecule-pair” configuration) gives insight into the nature of the intermolecular bonding at a single molecule-pair level, and defines the requirements for reproducible tunneling data. Simulations show that there is an instability in the tunnel gap at large currents, and this results in a multiplicity of contacts with a corresponding spread in the measured currents. At small currents (i.e. large gaps) the gap is stable, and functionalizing a pair of electrodes with recognition reagents (the “free analyte” configuration) can generate a distinct tunneling signal when an analyte molecule is trapped in the gap. This opens up a new interface between chemistry and electronics with immediate implications for rapid sequencing of single DNA molecules. PMID:20522930

On the advancement of quantum dot solar cell performance through enhanced charge carrier dynamics

NASA Astrophysics Data System (ADS)

Baker, David R.

The quantum dot solar cell is one of the few solar technologies which promises to compete with fossil fuels, but work is still needed to increase its performance. Electron transfer kinetics at interfaces and limitations of the redox couple within the cell, are responsible for lowering power conversion efficiency. Several techniques which are able to increase electron transfer within the working electrode and at the counter electrode/electrolyte interface are discussed in this dissertation. Trap sites on the surface of CdSe quantum dots are created when mercaptopropionic acid (MPA) is added to the suspension. The trap sites are emissive creating a loss pathway for photogenerated charges which will manifest as reduced photocurrent. MPA displaces amines on the surface of CdSe creating Se vacancies. Emission properties are controlled by the concentration of MPA. Because trap sites are generated, a more successful method to sensitize TiO2 films is the SILAR technique which directly grows quantum dots on the desired surface. Anodically etched TiO2 nanotubes yield photocurrents 20% greater than TiO2 nanoparticles because of longer electron diffusion lengths. Peak incident photon to charge carrier efficiencies of TiO2 nanotube samples show a doubling of photocurrent in the visible region compared to nanoparticles. The TiO2 substrates are sensitized with CdS by the SILAR process which is found to utilize both the inside and outside surfaces of the TiO2 nanotubes. Etched TiO2 nanotubes are removed from the underlying titanium foil in order to use spectroscopic techniques. Ultrafast transient absorption shows the extremely fast nature of charge injection from SILAR CdS into TiO 2 nanotubes. Surface area analysis of TiO2 nanotube powder gives an area of 77m2/g, a value 1.5 times larger than traditional TiO2 nanoparticles. By isolating the counter electrode with a salt bridge the effect of the polysulfide electrolyte is found to act as an electron scavenger on the working electrode. Though activity at the platinum counter electrode increases with the presence of polysulfides, the activity is too low to counteract scavenging at the working electrode. Cu2S, CoS and PbS electrochemically show promise as alternatives to platinum. Cu2S and CoS produce higher photocurrents and fill factors, greatly improving cell performance.

Semiconductor/dielectric interface engineering and characterization

NASA Astrophysics Data System (ADS)

Lucero, Antonio T.

The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized without exposing the sample to air. This is the first time that such a system has been reported. A special air-gap C-V probe will allow top gated measurements to be made, allowing semiconductor-dielectric interfaces to be studied during device processing.

Generation of heralded entanglement between distant quantum dot hole spins

NASA Astrophysics Data System (ADS)

Delteil, Aymeric

Entanglement plays a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, some of the major challenges are the efficient generation of entanglement between stationary (spin) and propagating (photon) qubits, the transfer of information from flying to stationary qubits, and the efficient generation of entanglement between distant stationary (spin) qubits. In this talk, I will present such experimental implementations achieved in our team with semiconductor self-assembled quantum dots.Not only are self-assembled quantum dots good single-photon emitters, but they can host an electron or a hole whose spin serves as a quantum memory, and then present spin-dependent optical selection rules leading to an efficient spin-photon quantum interface. Moreover InGaAs quantum dots grown on GaAs substrate can profit from the maturity of III-V semiconductor technology and can be embedded in semiconductor structures like photonic cavities and Schottky diodes.I will report on the realization of heralded quantum entanglement between two semiconductor quantum dot hole spins separated by more than five meters. The entanglement generation scheme relies on single photon interference of Raman scattered light from both dots. A single photon detection projects the system into a maximally entangled state. We developed a delayed two-photon interference scheme that allows for efficient verification of quantum correlations. Moreover the efficient spin-photon interface provided by self-assembled quantum dots allows us to reach an unprecedented rate of 2300 entangled spin pairs per second, which represents an improvement of four orders of magnitude as compared to prior experiments carried out in other systems.Our results extend previous demonstrations in single trapped ions or neutral atoms, in atom ensembles and nitrogen vacancy centers to the domain of artificial atoms in semiconductor nanostructures that allow for on-chip integration of electronic and photonic elements. This work lays the groundwork for the realization of quantum repeaters and quantum networks on a chip.

Graphene-edge dielectrophoretic tweezers for trapping of biomolecules.

PubMed

Barik, Avijit; Zhang, Yao; Grassi, Roberto; Nadappuram, Binoy Paulose; Edel, Joshua B; Low, Tony; Koester, Steven J; Oh, Sang-Hyun

2017-11-30

The many unique properties of graphene, such as the tunable optical, electrical, and plasmonic response make it ideally suited for applications such as biosensing. As with other surface-based biosensors, however, the performance is limited by the diffusive transport of target molecules to the surface. Here we show that atomically sharp edges of monolayer graphene can generate singular electrical field gradients for trapping biomolecules via dielectrophoresis. Graphene-edge dielectrophoresis pushes the physical limit of gradient-force-based trapping by creating atomically sharp tweezers. We have fabricated locally backgated devices with an 8-nm-thick HfO 2 dielectric layer and chemical-vapor-deposited graphene to generate 10× higher gradient forces as compared to metal electrodes. We further demonstrate near-100% position-controlled particle trapping at voltages as low as 0.45 V with nanodiamonds, nanobeads, and DNA from bulk solution within seconds. This trapping scheme can be seamlessly integrated with sensors utilizing graphene as well as other two-dimensional materials.

Plasmonic nanotweezers: strong influence of adhesion layer and nanostructure orientation on trapping performance.

PubMed

Roxworthy, Brian J; Toussaint, Kimani C

2012-04-23

Using Au bowtie nanoantennas arrays (BNAs), we demonstrate that the performance and capability of plasmonic nanotweezers is strongly influenced by both the material comprising the thin adhesion layer used to fix Au to a glass substrate and the nanostructure orientation with respect to incident illumination. We find that a Ti adhesion layer provides up to 30% larger trap stiffness and efficiency compared to a Cr layer of equal thickness. Orientation causes the BNAs to operate as either (1) a 2D optical trap capable of efficient trapping and manipulation of particles as small as 300 nm in diameter, or (2) a quasi-3D trap, with the additional capacity for size-dependent particle sorting utilizing axial Rayleigh-Bénard convection currents caused by heat generation. We show that heat generation is not necessarily deleterious to plasmonic nanotweezers and achieve dexterous manipulation of nanoparticles with non-resonant illumination of BNAs. © 2012 Optical Society of America

Comment on "Curvature capillary migration of microspheres" by N. Sharifi-Mood, I. B. Liu, K. J. Stebe, Soft Matter, 2015, 11, 6768.

PubMed

Würger, Alois

2016-01-14

In a recent paper, Sharifi-Mood et al. studied colloidal particles trapped at a liquid interface with opposite principal curvatures c1 = -c2. In the theory part, they claim that the trapping energy vanishes at second order in Δc = c1 - c2, which would invalidate our previous result [Phys. Rev. E: Stat., Nonlinear, Soft Matter Phys., 2006, 74, 041402]. Here we show that this claim arises from an improper treatment of the outer boundary condition on the deformation field. For both pinned and moving contact lines, we find that the outer boundary is irrelevant, which confirms our previous work. More generally, we show that the trapping energy is determined by the deformation close to the particle and does not depend on the far-field.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Checco, A.; Hofmann, T.; DiMasi, E.

The details of air nanobubble trapping at the interface between water and a nanostructured hydrophobic silicon surface are investigated using X-ray scattering and contact angle measurements. Large-area silicon surfaces containing hexagonally packed, 20 nm wide hydrophobic cavities provide ideal model surfaces for studying the morphology of air nanobubbles trapped inside cavities and its dependence on the cavity depth. Transmission small-angle X-ray scattering measurements show stable trapping of air inside the cavities with a partial water penetration of 5-10 nm into the pores, independent of their large depth variation. This behavior is explained by consideration of capillary effects and the cavitymore » geometry. For parabolic cavities, the liquid can reach a thermodynamically stable configuration - a nearly planar nanobubble meniscus - by partially penetrating into the pores. This microscopic information correlates very well with the macroscopic surface wetting behavior.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

McDaniel, Jesse G.; Yethiraj, Arun

The diffusion of protons in self-assembled systems is potentially important for the design of efficient proton exchange membranes. In this work, we study proton dynamics in a low-water content, lamellar phase of an sodium-carboxylate gemini surfactant/water system using computer simulations. The hopping of protons via the Grotthuss mechanism is explicity allowed through the multi-state empirical valence bond (MS-EVB) method. We find that the hydronium ion is trapped on the hydrophobic side of the surfactant-water interface, and proton diffusion then proceeds by hopping between surface sites. The importance of hydrophobic traps is surprising, because one would expect the hydronium ions tomore » be trapped at the charged head-groups. Finally, the physics illustrated in this system should be relevant to the proton dynamics in other amphiphilic membrane systems, whenever there exists exposed hydrophobic surface regions.« less

Study of defects in an electroresistive Au/La2/3Sr1/3MnO3/SrTiO3(001) heterostructure by positron annihilation

NASA Astrophysics Data System (ADS)

Ferragut, R.; Dupaquier, A.; Brivio, S.; Bertacco, R.; Egger, W.

2011-09-01

Defects in an ultrathin Au/La2/3Sr1/3MnO3/SrTiO3 (Au/LSMO/STO) heterostructure displaying electroresistive behavior were studied using variable energy positron annihilation spectroscopy. Vacancy-like defects were found to be the dominant positron traps in the LSMO and STO thin perovskite oxides with a number density >1017 cm-3 and 2 × 1017 cm-3 in the STO substrate. High defect density was revealed by strong positron trapping at the Au/LSMO interface. Oxygen deficiency in LSMO would be the main source of these traps. Besides, a low density of sub-nano voids of ˜6 Å was found in the substrate and in the thin LSMO/STO films.

Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel.

PubMed

Park, Ji Hoon; Lee, Young Tack; Lee, Hee Sung; Lee, Jun Young; Lee, Kimoon; Lee, Gyu Baek; Han, Jiwon; Kim, Tae Woong; Im, Seongil

2013-03-13

The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little Vth shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.

Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures

NASA Astrophysics Data System (ADS)

Aziz, A.; Kassmi, K.; Maimouni, R.; Olivié, F.; Sarrabayrouse, G.; Martinez, A.

2005-09-01

In this paper, we present the theoretical and experimental results of the influence of a charge trapped in ultra-thin oxide of metal/ultra-thin oxide/semiconductor structures (MOS) on the I(Vg) current-voltage characteristics when the conduction is of the Fowler-Nordheim (FN) tunneling type. The charge, which is negative, is trapped near the cathode (metal/oxide interface) after constant current injection by the metal (Vg<0). Of particular interest is the influence on the Δ Vg(Vg) shift over the whole I(Vg) characteristic at high field (greater than the injection field (>12.5 MV/cm)). It is shown that the charge centroid varies linearly with respect to the voltage Vg. The behavior at low field (<12.5 MV/cm) is analyzed in référence A. Aziz, K. Kassmi, Ka. Kassmi, F. Olivié, Semicond. Sci. Technol. 19, 877 (2004) and considers that the trapped charge centroid is fixed. The results obtained make it possible to analyze the influence of the injected charge and the applied field on the centroid position of the trapped charge, and to highlight the charge instability in the ultra-thin oxide of MOS structures.

Seasonal Changes in Adult Longevity and Pupal Weight of the Nantucket Pine Tip Moth (Lepidoptera: Tortricidae) with Implications for Interpreting Pheromone Trap Catch

Treesearch

Christopher Asaro; C. Wayne Berisford

2001-01-01

Pheromone trap catches of the Nantucket pine tip moth, Rhyacionia frustrana (Corn-stock), are often much higher during the first generation as compared with later generations, regardless of population density or damage levels. One hypothesis proposed to explain this phenomenon is reduced adult longevity during summer due to high temperatures. In this...

Microwave quantum logic gates for trapped ions.

PubMed

Ospelkaus, C; Warring, U; Colombe, Y; Brown, K R; Amini, J M; Leibfried, D; Wineland, D J

2011-08-10

Control over physical systems at the quantum level is important in fields as diverse as metrology, information processing, simulation and chemistry. For trapped atomic ions, the quantized motional and internal degrees of freedom can be coherently manipulated with laser light. Similar control is difficult to achieve with radio-frequency or microwave radiation: the essential coupling between internal degrees of freedom and motion requires significant field changes over the extent of the atoms' motion, but such changes are negligible at these frequencies for freely propagating fields. An exception is in the near field of microwave currents in structures smaller than the free-space wavelength, where stronger gradients can be generated. Here we first manipulate coherently (on timescales of 20 nanoseconds) the internal quantum states of ions held in a microfabricated trap. The controlling magnetic fields are generated by microwave currents in electrodes that are integrated into the trap structure. We also generate entanglement between the internal degrees of freedom of two atoms with a gate operation suitable for general quantum computation; the entangled state has a fidelity of 0.76(3), where the uncertainty denotes standard error of the mean. Our approach, which involves integrating the quantum control mechanism into the trapping device in a scalable manner, could be applied to quantum information processing, simulation and spectroscopy.

Light Coupling and Trapping in Ultrathin Cu(In,Ga)Se2 Solar Cells Using Dielectric Scattering Patterns.

PubMed

van Lare, Claire; Yin, Guanchao; Polman, Albert; Schmid, Martina

2015-10-27

We experimentally demonstrate photocurrent enhancement in ultrathin Cu(In,Ga)Se2 (CIGSe) solar cells with absorber layers of 460 nm by nanoscale dielectric light scattering patterns printed by substrate conformal imprint lithography. We show that patterning the front side of the device with TiO2 nanoparticle arrays results in a small photocurrent enhancement in almost the entire 400-1200 nm spectral range due to enhanced light coupling into the cell. Three-dimensional finite-difference time-domain simulations are in good agreement with external quantum efficiency measurements. Patterning the Mo/CIGSe back interface using SiO2 nanoparticles leads to strongly enhanced light trapping, increasing the efficiency from 11.1% for a flat to 12.3% for a patterned cell. Simulations show that optimizing the array geometry could further improve light trapping. Including nanoparticles at the Mo/CIGSe interface leads to substantially reduced parasitic absorption in the Mo back contact. Parasitic absorption in the back contact can be further reduced by fabricating CIGSe cells on top of a SiO2-patterned In2O3:Sn (ITO) back contact. Simulations show that these semitransparent cells have similar spectrally averaged reflection and absorption in the CIGSe active layer as a Mo-based patterned cell, demonstrating that the absorption losses in the Mo can be partially turned into transmission through the semitransparent geometry.

Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP

NASA Astrophysics Data System (ADS)

Ferrandis, Philippe; Billaud, Mathilde; Duvernay, Julien; Martin, Mickael; Arnoult, Alexandre; Grampeix, Helen; Cassé, Mikael; Boutry, Hervé; Baron, Thierry; Vinet, Maud; Reimbold, Gilles

2018-04-01

To overcome the Fermi-level pinning in III-V metal-oxide-semiconductor capacitors, attention is usually focused on the choice of dielectric and surface chemical treatments prior to oxide deposition. In this work, we examined the influence of the III-V material surface cleaning and the semiconductor growth technique on the electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP(100) substrates. By means of the capacitance-voltage measurements, we demonstrated that samples do not have the same total oxide charge density depending on the cleaning solution used [(NH4)2S or NH4OH] prior to oxide deposition. The determination of the interface trap density revealed that a Fermi-level pinning occurs for samples grown by metalorganic chemical vapor deposition but not for similar samples grown by molecular beam epitaxy. Deep level transient spectroscopy analysis explained the Fermi-level pinning by an additional signal for samples grown by metalorganic chemical vapor deposition, attributed to the tunneling effect of carriers trapped in oxide toward interface states. This work emphasizes that the choice of appropriate oxide and cleaning treatment is not enough to prevent a Fermi-level pinning in III-V metal-oxide-semiconductor capacitors. The semiconductor growth technique needs to be taken into account because it impacts the trapping properties of the oxide.

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Ho-Myoung; Kim, Hee-Dong; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

Graphical abstract: The degradation tendency extracted by CP technique was almost the same in both the bulk-type and TFT-type cells. - Highlights: • D{sub it} is directly investigated from bulk-type and TFT-type CTF memory. • Charge pumping technique was employed to analyze the D{sub it} information. • To apply the CP technique to monitor the reliability of the 3D NAND flash. - Abstract: The energy distribution and density of interface traps (D{sub it}) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP)more » technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 10{sup 12} cm{sup −2} eV{sup −1} to 3.66 × 10{sup 13} cm{sup −2} eV{sup −1} due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for D{sub it} of the TFT-type cells was similar to those of bulk-type cells.« less

Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Hanna, Mina J.; Zhao, Han; Lee, Jack C.

2012-10-01

We analyze the anomalous I-V behavior in SiN prepared by plasma enhanced chemical vapor deposition for use as a gate insulator in AlGaN/GaN metal insulator semiconductor heterostructure filed effect transistors (HFETs). We observe leakage current across the dielectric with opposite polarity with respect to the applied electric field once the voltage sweep reaches a level below a determined threshold. This is observed as the absolute minimum of the leakage current does not occur at minimum voltage level (0 V) but occurs earlier in the sweep interval. Curve-fitting analysis suggests that the charge-transport mechanism in this region is Poole-Frenkel current, followed by Schottky emission due to band bending. Despite the current anomaly, the sample devices have shown a notable reduction of leakage current of over 2 to 6 order of magnitudes compared to the standard Schottky HFET. We show that higher pressures and higher silane concentrations produce better films manifesting less trapping. This conforms to our results that we reported in earlier publications. We found that higher chamber pressure achieves higher sheet carrier concentration that was found to be strongly dependent on the trapped space charge at the SiN/GaN interface. This would suggest that a lower chamber pressure induces more trap states into the SiN/GaN interface.

Janus Colloids Actively Rotating on the Surface of Water.

PubMed

Wang, Xiaolu; In, Martin; Blanc, Christophe; Würger, Alois; Nobili, Maurizio; Stocco, Antonio

2017-12-05

Biological or artificial microswimmers move performing trajectories of different kinds such as rectilinear, circular, or spiral ones. Here, we report on circular trajectories observed for active Janus colloids trapped at the air-water interface. Circular motion is due to asymmetric and nonuniform surface properties of the particles caused by fabrication. Motion persistence is enhanced by the partial wetted state of the Janus particles actively moving in two dimensions at the air-water interface. The slowing down of in-plane and out-of-plane rotational diffusions is described and discussed.

Phenomenological theory of laser-plasma interaction in ``bubble'' regime

NASA Astrophysics Data System (ADS)

Kostyukov, I.; Pukhov, A.; Kiselev, S.

2004-11-01

The electron trapping in the "bubble" regime of laser-plasma interaction as proposed by Pukhov and Meyer-ter-Vehn [A. Pukhov and J. Meyer-ter-Vehn, Appl. Phys. B 74, 355 (2002)] is studied. In this regime the laser pulse generates a solitary plasma electron cavity: the bubble. It is free from the cold plasma electrons and runs with nearly light velocity. The present work discusses the form of the bubble and the spatial distribution of electromagnetic fields within the cavity. We extend the one-dimensional electron capture theory to the three-dimensional case. It is shown that the bubble can trap plasma electrons. The trapping condition is derived and the trapping cross section is estimated. Electron motion in the self-generated electron bunch is investigated. Estimates for the maximum of electron bunch energy and the bunch density are provided.

Trap States of the Oxide Thin Film Transistor

NASA Astrophysics Data System (ADS)

Yu, Kyeong Min; Yuh, Jin Tae; Park, Sang Hee Ko; Ryu, Min Ki; Yun, Eui Jung; Bae, Byung Seong

2013-10-01

We investigated the temperature dependent recovery of the threshold voltage shift observed in both ZnO and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) after application of gate bias and light illumination. Two types of recovery were observed for both the ZnO and IGZO TFTs; low temperature recovery (below 110 °C) which is attributed to the trapped charge and high temperature recovery (over 110 °C) which is related to the annihilation of trap states generated during stresses. From a comparison study of the recovery rate with the analysis of hydrogen diffusion isochronal annealing, a similar behavior was observed for both TFT recovery and hydrogen diffusion. This result suggests that hydrogen plays an important role in the generation and annihilation of trap states in oxide TFTs under gate bias or light illumination stresses.

Soft-state biomicrofluidic pulse generator for single cell analysis

NASA Astrophysics Data System (ADS)

Sabounchi, Poorya; Ionescu-Zanetti, Cristian; Chen, Roger; Karandikar, Manjiree; Seo, Jeonggi; Lee, Luke P.

2006-05-01

We present the design, fabrication, and characterization of a soft-state biomicrofluidic pulse generator for single cell analysis. Hydrodynamic cell trapping via lateral microfluidic junctions allows the trapping of single cells from a bulk suspension. Microfluidic injection sites adjacent to the cell-trapping channels enable the pulsed delivery of nanoliter volumes of biochemical reagent. We demonstrated the application and removal of reagent at a frequency of 10Hz with a rise time of less than 33ms and a reagent consumption rate of 0.2nL/s. It is shown that this system operates as a low-pass filter with a cutoff frequency of 7Hz.

Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

NASA Astrophysics Data System (ADS)

Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

2018-02-01

We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

The electrostatic interaction between interfacial colloidal particles

NASA Astrophysics Data System (ADS)

Hurd, A. J.

1985-11-01

The electrostatic interaction between charged, colloidal particles trapped at an air-water interface is considered using linearised Poisson-Boltzmann results for point particles. In addition to the expected screened-Coulomb contribution, which decays exponentially, an algebraic dipole-dipole interaction occurs that may account for long-range interactions in interfacial colloidal systems.

Trap cropping systems and a physical barrier for suppression of stink bugs (Heteroptera: Pentatomidae) in Cotton

USDA-ARS?s Scientific Manuscript database

Nezara viridula (L.), Euschistus servus (Say), and Chinavia hilaris (Say) (Heteroptera: Pentatomidae) are economic pests of cotton in peanut-cotton farmscapes in the southeastern USA. Because stink bug adults exhibit edge-mediated dispersal at crop-to-crop interfaces as they colonize cotton, strateg...

At the Creation: Chaos, Control, and Automation--Commercial Software Development for Archives.

ERIC Educational Resources Information Center

Drr, W. Theodore

1988-01-01

An approach to the design of flexible text-based management systems for archives includes tiers for repository, software, and user management systems. Each tier has four layers--objective, program, result, and interface. Traps awaiting software development companies involve the market, competition, operations, and finance. (10 references) (MES)

Interface architecture between TiO2/perovskite, perovskite/hole transport layer, and perovskite grain boundary(Conference Presentation)

NASA Astrophysics Data System (ADS)

Hayase, Shuzi; Hirotani, Daisuke; Moriya, Masahiro; Ogomi, Yuhei; Shen, Qing; Yoshino, Kenji; Toyoda, Taro

2016-09-01

In order to examine the interface structure of TiO2/perovskite layer, quartz crystal microbalance sensor (QCM) was used. On the QCM sensor, TiO2 layer was fabricated and the PbI2 solution in Dimethylformamide (DMF) was passed on the QCM sensor to estimate the adsorption density of the PbI2 on the titania2. The amount of PbI2 adsorption on TiO2 surface increased as the adsorption time and leveled off at a certain time. PbI2 still remained even after the solvent only (DMF) was passed on the TiO2 layer on QCM (namely rinsing with DMF), suggesting that the PbI2 was tightly bonded on the TiO2 surface. The bonding structure was found to be Ti-O-Pb linkage by XPS analysis. We concluded that the Ti-OH on the surface of TiO2 reacts with I-Pb-I to form Ti-O-Pb-I and HI (Fig.1 B). The surface trap density was measured by thermally stimulated current (TSC) method. Before the PbI2 passivation, the trap density of TiO2 was 1019 cm3. The trap density decreased to 1016/cm3 after the PbI2 passivation, suggesting that the TiO2 surface trap was passivated with I-Pb-I. The passivation density was tuned by the concentration of PbI2 in DMF, by which TiO2 layer was passivated. Perovskite solar cells were fabricated on the passivated TiO2 layer with various PbI2 passivation densities by one step process (mixture of PbI2 + MAI in DMF). It was found that Jsc increased with an increase in the Ti-O-Pb density. We concluded that the interface between TiO2 and perovskite layer has passivation structure consisting of Ti-O-Pb-I which decreases the trap density of the interfaces and supresses charge recombination. The effect of Cl anion on high efficiency is still controversial when perovskite layer is prepared by one step method from the mixture of MAI and PbCl2. It was found that adsorption density of PbCl2 on TiO2 surface was much higher than that of PbI2 from the experiment using QCM sensor. After the surface was washed with DMF, Cl and Pb were detected. These results suggest that the TiO2 surface was much more passivated by PbCl2 than by PbI2. This may explain partially the high efficiency when the perovskite layer was fabricated by one step process consisting of MAI and PbCl2 solution. We also observed that the crystal size increased with an increase in the amount of Cl anion which of course one of the explanation of the high efficiency. The interface of hole transport layer/perovskite layer, and between perovskite layer /perovskite layer (grain boundary) was passivated with organic amines. The passivation was also effective for increasing Voc and Jsc. This was explained by the results of transient absorption spectroscopy that the charge recombination time between hole transport payer/perovskite layer increased from 0.3 μsec to 60 μsec.

Ambient-temperature trap/release of arsenic by dielectric barrier discharge and its application to ultratrace arsenic determination in surface water followed by atomic fluorescence spectrometry

USDA-ARS?s Scientific Manuscript database

A novel dielectric barrier discharge reactor (DBDR) was utilized to trap/release arsenic coupled to hydride generation atomic fluorescence spectrometry (HGAFS). On the DBD principle, the precise and accurate control of trap/release procedures was fulfilled at ambient temperature, and an analytical m...

Marginally outer trapped surfaces and symmetries

NASA Astrophysics Data System (ADS)

Carrasco, Alberto; Mars, Marc

2009-05-01

We study properties of outermost marginally outer trapped surfaces in slices of space-times possessing certain symmetries, like isometries, homotheties or conformal Killings. In particular, we find restrictions on these surfaces for the vector field generating the symmetry. As an application we give a result of non-existence of outermost marginally outer trapped surfaces in accelerated Friedmann-Lemaître-Roberson-Walker spacetimes.

a Positron 2D-ACAR Study of the Silicon-Dioxide Interface and the Point Defects in the Semi-Insulating Gallium Arsenide

NASA Astrophysics Data System (ADS)

Peng, Jianping

The SiO_2-Si system has been the subject of extensive study for several decades. Particular interest has been paid to the interface between Si single crystal and the amorphous SiO_2 which determines the properties and performances of devices. This is significant because of the importance of Si technology in the semiconductor industry. The development of the high-intensity slow positron beam at Brookhaven National Laboratory make it possible to study this system for the first time using the positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique. 2D-ACAR is a well established and is a non-destructive microscopic probe for studying the electronic structure of materials, and for doing the depth-resolved measurements. Some unique information was obtained from the measurements performed on the SiO_2-Si system: Positronium (Ps) atoms formation and trapping in microvoids in both oxide and interface regions; and positron annihilation at vacancy-like defects in the interface region which can be attributed to the famous Pb centers. The discovery of the microvoids in the interface region may have some impact on the fabrication of the next generation electronic devices. Using the conventional 2D-ACAR setup with a ^{22}Na as positron source, we also studied the native arsenic (As) vacancy in the semi -insulating gallium-arsenide (SI-GaAs), coupled with in situ infrared light illumination. The defect spectrum was obtained by comparing the spectrum taken without photo -illumination to the spectrum taken with photo-illumination. The photo-illumination excited electrons from valence band to the defect level so that positrons can become localized in the defects. The two experiments may represent a new direction of the application of positron 2D-ACAR technique on the solid state physics and materials sciences.

Monodisperse microdroplet generation and stopping without coalescence

DOEpatents

Beer, Neil Reginald

2015-04-21

A system for monodispersed microdroplet generation and trapping including providing a flow channel in a microchip; producing microdroplets in the flow channel, the microdroplets movable in the flow channel; providing carrier fluid in the flow channel using a pump or pressure source; controlling movement of the microdroplets in the flow channel and trapping the microdroplets in a desired location in the flow channel. The system includes a microchip; a flow channel in the microchip; a droplet maker that generates microdroplets, the droplet maker connected to the flow channel; a carrier fluid in the flow channel, the carrier fluid introduced to the flow channel by a source of carrier fluid, the source of carrier fluid including a pump or pressure source; a valve connected to the carrier fluid that controls flow of the carrier fluid and enables trapping of the microdroplets.

Monodisperse microdroplet generation and stopping without coalescence

DOEpatents

Beer, Neil Reginald

2016-02-23

A system for monodispersed microdroplet generation and trapping including providing a flow channel in a microchip; producing microdroplets in the flow channel, the microdroplets movable in the flow channel; providing carrier fluid in the flow channel using a pump or pressure source; controlling movement of the microdroplets in the flow channel and trapping the microdroplets in a desired location in the flow channel. The system includes a microchip; a flow channel in the microchip; a droplet maker that generates microdroplets, the droplet maker connected to the flow channel; a carrier fluid in the flow channel, the carrier fluid introduced to the flow channel by a source of carrier fluid, the source of carrier fluid including a pump or pressure source; a valve connected to the carrier fluid that controls flow of the carrier fluid and enables trapping of the microdroplets.

Crystalline ZrTiO{sub 4} gated p-metal–oxide–semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Chao-Yi; Hsieh, Ching-Heng; Lee, Ching-Wei

2015-02-02

ZrTiO{sub 4} crystallized in orthorhombic (o-) phase was stacked with an amorphous Yb{sub 2}O{sub 3} interfacial layer as the gate dielectric for Si-based p-MOSFETs. With thermal annealing after gate electrode, the gate stack with equivalent oxide thickness (EOT) of 0.82 nm achieves high dielectric quality by showing a low interface trap density (D{sub it}) of 2.75 × 10{sup 11 }cm{sup −2}eV{sup −1} near the midgap and low oxide traps. Crystallization of ZrTiO{sub 4} and post metal annealing are also proven to introduce very limited amount of metal induced gap states or interfacial dipole. The p-MOSFETs exhibit good sub-threshold swing of 75 mV/dec which is ascribedmore » to the low D{sub it} value and small EOT. Owing to the Y{sub 2}O{sub 3} interfacial layer and smooth interface with Si substrate that, respectively, suppress phonon and surface roughness scattering, the p-MOSFETs also display high hole mobility of 49 cm{sup 2}/V-s at 1 MV/cm. In addition, I{sub on}/I{sub off} ratio larger than 10{sup 6} is also observed. From the reliability evaluation by negative bias temperature instability test, after stressing with an electric field of −10 MV/cm at 85 °C for 1000 s, satisfactory threshold voltage shift of 12 mV and sub-threshold swing degradation of 3% were obtained. With these promising characteristics, the Yb{sub 2}O{sub 3}/o-ZrTiO{sub 4} gate stack holds the great potential for next-generation electronics.« less

The Development of Spectroscopic Techniques to Study Defects in Thin Film Silicon-Dioxide

NASA Astrophysics Data System (ADS)

Zvanut, Mary Ellen

This dissertation research concerns the study of defects in thin film sputtered SiO_2 which is used as an optical coating material. The capacitance-voltage and current-voltage techniques typically used in microelectronics investigations were used to examine the concentration, location, and kinetics of charge in an aluminum-sputtered oxide-native oxide-silicon capacitor. The response of the capacitor to low field bias stress reveals a hysteretic trapping behavior similar to that observed in microelectronic grade oxide films. In an effort to understand this phenomenon, a band-to-trap tunneling model was developed based on the assumption that the defect involved exhibits a delta function spatial distribution and an extended energy distribution. The central feature of this model, defect relaxation, provides a physical explanation for the hysteretic trapping behavior. Analysis yields that the trap is located spatially within 2 nm of the Si/SiO _2 interface and energetically less than 5 eV from the SiO_2 conduction band edge. The relaxation energy associated with the capture of an electron at the trap is 0.1-2.2 eV. Correlation of the electrical measurements executed for this investigation with electron paramagnetic resonance (EPR) data obtained by Dr. P. Caplan provides structural information about the defect involved with the hysteretic trapping phenomenon. EPR results obtained before and after subjecting an oxide-silicon structure to corona discharge suggest that the trapping center is an E^ ' defect. The technique of band-to-trap tunneling spectroscopy combined with the EPR experiments provides the first reported trap depth associated with the capture of a hole at an E^' center located near the silicon surface of an oxide/silicon system.

A simple optical tweezers for trapping polystyrene particles

NASA Astrophysics Data System (ADS)

Shiddiq, Minarni; Nasir, Zulfa; Yogasari, Dwiyana

2013-09-01

Optical tweezers is an optical trap. For decades, it has become an optical tool that can trap and manipulate any particle from the very small size like DNA to the big one like bacteria. The trapping force comes from the radiation pressure of laser light which is focused to a group of particles. Optical tweezers has been used in many research areas such as atomic physics, medical physics, biophysics, and chemistry. Here, a simple optical tweezers has been constructed using a modified Leybold laboratory optical microscope. The ocular lens of the microscope has been removed for laser light and digital camera accesses. A laser light from a Coherent diode laser with wavelength λ = 830 nm and power 50 mW is sent through an immersion oil objective lens with magnification 100 × and NA 1.25 to a cell made from microscope slides containing polystyrene particles. Polystyrene particles with size 3 μm and 10 μm are used. A CMOS Thorlabs camera type DCC1545M with USB Interface and Thorlabs camera lens 35 mm are connected to a desktop and used to monitor the trapping and measure the stiffness of the trap. The camera is accompanied by camera software which makes able for the user to capture and save images. The images are analyzed using ImageJ and Scion macro. The polystyrene particles have been trapped successfully. The stiffness of the trap depends on the size of the particles and the power of the laser. The stiffness increases linearly with power and decreases as the particle size larger.

Microfabricated ion trap array

DOEpatents

Blain, Matthew G [Albuquerque, NM; Fleming, James G [Albuquerque, NM

2006-12-26

A microfabricated ion trap array, comprising a plurality of ion traps having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale ion traps to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The reduced electrode voltage enables integration of the microfabricated ion trap array with on-chip circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of the microfabricated ion trap array can be realized in truly field portable, handheld microanalysis systems.

Evaluation of various models of propane-powered mosquito traps.

PubMed

Kline, Daniel L

2002-06-01

Large cage and field studies were conducted to determine the efficacy of various models of propane-powered mosquito traps. These traps utilized counterflow technology in conjunction with catalytic combustion to produce attractants (carbon dioxide, water vapor, and heat) and a thermoelectric generator that converted excess heat into electricity for stand-alone operation. The cage studies showed that large numbers of Aedes aegypti and Ochlerotatus taeniorhynchus were captured and that each progressive model resulted in increased trapping efficiency. In several field studies against natural populations of mosquitoes two different propane traps were compared against two other trap systems, the professional (PRO) and counterflow geometry (CFG) traps. In these studies the propane traps consistently caught more mosquitoes than the PRO trap and significantly fewer mosquitoes than the CFG traps. The difference in collection size between the CFG and propane traps was due mostly to Anopheles crucians. In spring 1997 the CFG trap captured 3.6X more An. crucians than the Portable Propane (PP) model and in spring 1998 it captured 6.3X more An. crucians than the Mosquito Magnet Beta-1 (MMB-1) trap. Both the PP and MMB-1 captured slightly more Culex spp. than the CFG trap.

Tunable ion-photon entanglement in an optical cavity.

PubMed

Stute, A; Casabone, B; Schindler, P; Monz, T; Schmidt, P O; Brandstätter, B; Northup, T E; Blatt, R

2012-05-23

Proposed quantum networks require both a quantum interface between light and matter and the coherent control of quantum states. A quantum interface can be realized by entangling the state of a single photon with the state of an atomic or solid-state quantum memory, as demonstrated in recent experiments with trapped ions, neutral atoms, atomic ensembles and nitrogen-vacancy spins. The entangling interaction couples an initial quantum memory state to two possible light-matter states, and the atomic level structure of the memory determines the available coupling paths. In previous work, the transition parameters of these paths determined the phase and amplitude of the final entangled state, unless the memory was initially prepared in a superposition state (a step that requires coherent control). Here we report fully tunable entanglement between a single (40)Ca(+) ion and the polarization state of a single photon within an optical resonator. Our method, based on a bichromatic, cavity-mediated Raman transition, allows us to select two coupling paths and adjust their relative phase and amplitude. The cavity setting enables intrinsically deterministic, high-fidelity generation of any two-qubit entangled state. This approach is applicable to a broad range of candidate systems and thus is a promising method for distributing information within quantum networks.

Active charge trapping control in dielectrics under ionizing radiation

NASA Astrophysics Data System (ADS)

Dominguez-Pumar, M.; Bheesayagari, C.; Gorreta, S.; Pons-Nin, J.

2017-12-01

Charge trapping is is a design and reliability factor in plasma sensors. Examples can be found in microchannel plate detectors in plasma analyzers, where multiple layers have been devised to ensure filled trapped electrons for enhanced secondary emission [1]. Charge trap mapping is used to recover distortion in telescope CCDs [2]. Specific technologies are designed to mitigate the effect of ionizing radiation in monolithic Active Pixel Sensors [3]. We report in this paper a control loop designed to control charge in Metal-Oxide-Semiconductor capacitors. We find that the net trapped charge in the device can be set within some limits to arbitrary values that can be changed with time. The control loop periodically senses the net trapped charge by detecting shifts in the capacitance vs voltage characteristic, and generates adequate waveform sequences to keep the trapped charge at the desired level [4]. The waveforms continuously applied have been chosen to provide different levels of charge injection into the dielectric. The control generates the adequate average charge injection to reach and maintain the desired level of trapped charge, compensating external disturbances. We also report that this control can compensate charge generated by ionizing radiation. Experiments will be shown in which this compensation is obtained with X-rays and gamma radiation. The presented results open the possibility of applying active compensation techniques for the first time in a wide number of devices such as radiation sensors, MOS transistors and other devices. The continuous drive towards integration may allow the implementation of this type of controls in devices needing to reject external disturbances, or needing to optimize their response to radiation or ion fluxes. References: [1] patent US 2009/0212680 A1. [2] A&A 534, A20 (2011). [3] Hemperek, Nucl. Instr. and Meth. in Phys. Res. Sect. A.796, pp 8-12, 2015. [4] Dominguez, IEEE Trans. Ind. Electr, 64 (4), 3023-3029, 2017.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pandit, Bill; Jackson, Nicholas E.; Zheng, Tianyue

Rational design strategies for controlling the energetics of conjugated “donor–acceptor” copolymers are ubiquitous in the literature, as they allow for simple energy-level tuning strategies to be employed for photovoltaic and transistor applications. Utilizing the recently reported PTRn series of conjugated polymers closely related to the widely implemented material PTB7, we investigate the effect of local copolymer block energetics on the generation of transient excitonic and charge carrier species. It is clearly demonstrated that local copolymer block energetics play a much larger role than is apparent from simple energy-level tuning arguments, and drastically affect the ultrafast generation of free-charge carrier andmore » trap state populations. Specifically, we observe an almost complete reversal in the efficient generation of free-charge in PTB7 to the ultrafast creation of a high percentage of trapped pseudo charge-transfer states. The implications of this secondary effect of “donor–acceptor” energy level tuning are discussed, along with strategies for avoiding the generation of trap states in “donor–acceptor” copolymers.« less

Micro particle launcher/cleaner based on optical trapping technology.

PubMed

Liu, Zhihai; Liang, Peibo; Zhang, Yu; Zhang, Yaxun; Zhao, Enming; Yang, Jun; Yuan, Libo

2015-04-06

Efficient and controllable launching function of an optical tweezers is a challenging task. We present and demonstrate a novel single fiber optical tweezers which can trap and launch (clean) a target polystyrene (PS) microsphere (diameter~10μm) with independent control by using two wavelengths beams: 980nm and 1480nm. We employ 980nm laser beam to trap the target PS microsphere by molding the fiber tip into a special tapered-shape; and we employ 1480nm laser beam to launch the trapped PS microsphere with a certain velocity by using the thermophoresis force generated from the thermal effect due to the high absorption of the 1480nm laser beams in water. When the launching force is smaller than the trapping force, the PS microsphere will be trapped near the fiber tip, and the launching force will blow away other PS microspheres in the workspace realizing the cleaning function; When the launching force is larger than the trapping force, the trapped PS microsphere will be launched away from the fiber tip with a certain velocity and towards a certain direction, realizing the launching function. The launching velocity, acceleration and the distance can be measured by detecting the interference signals generated from the PS microsphere surface and the fiber tip end-face. This PS microsphere launching and cleaning functions expanded new features of single fiber optical tweezers, providing for the possibility of more practical applications in the micro manipulation research fields.

Low frequency noise in the unstable contact region of Au-to-Au microcontact for microelectromechanical system switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Haodong; Wang, Hong, E-mail: ewanghong@ntu.edu.sg; Ke, Feixiang

The noise behavior of Au-to-Au microcontact for microelectromechanical system switches has been experimentally studied in the unstable contact region. The results suggest that the electrical conduction remains nonmetallic at the initial stage during contact formation due to the existence of alien films, and traps in the alien layer located at the contact interface could play an important role in determining the conduction noise. The conduction fluctuation induced by electron trapping-detrapping associated with the hydrocarbon layer is found to be an intrinsic noise source contributing to the low frequency noise in the unstable contact region.

Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT)

NASA Astrophysics Data System (ADS)

Wang, Wei; Wang, Long; Xu, Guangwei; Gao, Nan; Wang, Lingfei; Ji, Zhuoyu; Lu, Congyan; Lu, Nianduan; Li, Ling; Liu, Miwng

2017-08-01

Mobility degradation at high gate bias is often observed in organic thin film transistors. We propose a mechanism for this confusing phenomenon, based on the percolation theory with the presence of disordered energy landscape with an exponential density of states. Within a simple model we show how the surface states at insulator/organic interface trap a portion of channel carriers, and result in decrease of mobility as well as source/drain current with gate voltage. Depending on the competition between the carrier accumulation and surface trapping effect, two different carrier density dependences of mobility are obtained, in excellent agreement with experiment data.

Low frequency noise in the unstable contact region of Au-to-Au microcontact for microelectromechanical system switches

NASA Astrophysics Data System (ADS)

Qiu, Haodong; Wang, Hong; Ke, Feixiang

2014-06-01

The noise behavior of Au-to-Au microcontact for microelectromechanical system switches has been experimentally studied in the unstable contact region. The results suggest that the electrical conduction remains nonmetallic at the initial stage during contact formation due to the existence of alien films, and traps in the alien layer located at the contact interface could play an important role in determining the conduction noise. The conduction fluctuation induced by electron trapping-detrapping associated with the hydrocarbon layer is found to be an intrinsic noise source contributing to the low frequency noise in the unstable contact region.

Random Telegraph Signal Amplitudes in Sub 100 nm (Decanano) MOSFETs: A 3D 'Atomistic' Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.; Saini, Subhash

2000-01-01

In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on the position of the trapped charge in the channel and on the device design parameters. We have observed a significant increase in the maximum RTS amplitude when discrete random dopants are employed in the simulations.

Scattering of water from the glycerol liquid-vacuum interface

NASA Technical Reports Server (NTRS)

Benjamin, I.; Wilson, M. A.; Pohorille, A.; Nathanson, G. M.

1995-01-01

Molecular dynamics calculations of the scattering of D2O from the glycerol surface at different collision energies are reported. The results for the trapping probabilities and energy transfer are in good agreement with experiments. The calculations demonstrate that the strong attractive forces between these two strongly hydrogen bonding molecules have only a minor effect on the initial collision dynamics. The trapping probability is influenced to a significant extent by the repulsive hard sphere-like initial encounter with the corrugated surface and, only at a later stage, by the efficiency of energy flow in the multiple interactions between the water and the surface molecules.

Visualization of the equilibrium position of colloidal particles at fluid-water interfaces by deposition of nanoparticles

NASA Astrophysics Data System (ADS)

Sabapathy, Manigandan; Kollabattula, Viswas; Basavaraj, Madivala G.; Mani, Ethayaraja

2015-08-01

We present a general yet simple method to measure the contact angle of colloidal particles at fluid-water interfaces. In this method, the particles are spread at the required fluid-water interface as a monolayer. In the water phase a chemical reaction involving reduction of a metal salt such as aurochloric acid is initiated. The metal grows as a thin film or islands of nanoparticles on the particle surface exposed to the water side of the interface. Analyzing the images of particles by high resolution scanning microscopy (HRSEM), we trace the three phase contact line up to which deposition of the metal film occurs. From geometrical relations, the three phase contact angle is then calculated. We report the measurements of the contact angle of silica and polystyrene (PS) particles at different interfaces such as air-water, decane-water and octanol-water. We have also applied this method to measure the contact angle of surfactant treated polystyrene particles at the air-water interface, and we find a non-monotonic change of the contact angle with the concentration of the surfactant. Our results are compared with the well-known gel trapping technique and we find good comparison with previous measurements.We present a general yet simple method to measure the contact angle of colloidal particles at fluid-water interfaces. In this method, the particles are spread at the required fluid-water interface as a monolayer. In the water phase a chemical reaction involving reduction of a metal salt such as aurochloric acid is initiated. The metal grows as a thin film or islands of nanoparticles on the particle surface exposed to the water side of the interface. Analyzing the images of particles by high resolution scanning microscopy (HRSEM), we trace the three phase contact line up to which deposition of the metal film occurs. From geometrical relations, the three phase contact angle is then calculated. We report the measurements of the contact angle of silica and polystyrene (PS) particles at different interfaces such as air-water, decane-water and octanol-water. We have also applied this method to measure the contact angle of surfactant treated polystyrene particles at the air-water interface, and we find a non-monotonic change of the contact angle with the concentration of the surfactant. Our results are compared with the well-known gel trapping technique and we find good comparison with previous measurements. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03369a

Quantum correlated pulse-pair generation during pulse-trapping propagation in optical fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirosawa, Kenichi; Kannari, Fumihiko; Takeoka, Masahiro

2007-10-15

We study a different scheme for generating photon number correlation and squeezing for two copropagating pulses, a soliton and a trapped pulse, in an optical fiber. When the center wavelength of a trapped pulse is close to that of a soliton pulse, the two pulses interact with each other through the third-order optical nonlinear process and exchange photons between the two pulses. The soliton pulse exhibits photon number squeezing. When the center wavelengths of the two pulses are sufficiently separated and no photon-number exchange takes place, the strong negative correlation in the photon number between the parts of the trappedmore » pulse and the soliton pulse is formed via cross-phase modulation. By measuring the photon number of the negatively correlated part of the trapped pulse, we can obtain the photon number of the soliton pulse with a variance less than the shot-noise limit.« less

Effects of Surfactant Contamination on the Next Generation Gas Trap for the ISS Internal Thermal Control System

NASA Technical Reports Server (NTRS)

Leimkuehler, Thomas O.; Lukens, Clark; Reeves, Daniel R.; Holt, James M.

2004-01-01

The current dual-membrane gas trap is designed to remove non-condensed gas bubbles from the Internal Thermal Control System (ITCS) coolant on board the International Space Station (ISS). To date it has successfully served its purpose of preventing gas bubbles from causing depriming, overspeed, and shutdown of the ITCS pump. However, contamination in the ITCS coolant has adversely affected the gas venting rate and lifetime of the gas trap, warranting a development effort for a next-generation gas trap. Previous testing has shown that a hydrophobic-only design is capable of performing even better than the current dual-membrane design for both steady-state gas removal and gas slug removal in clean deionized water. This paper presents results of testing to evaluate the effects of surfactant contamination on the steady-state performance of the hydrophobic-only design.

Hexapole-compensated magneto-optical trap on a mesoscopic atom chip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joellenbeck, S.; Mahnke, J.; Randoll, R.

2011-04-15

Magneto-optical traps on atom chips are usually restricted to small atomic samples due to a limited capture volume caused primarily by distorted field configurations. Here we present a magneto-optical trap based on a millimeter-sized wire structure which generates a magnetic field with minimized distortions. Together with the loading from a high-flux two-dimensional magneto-optical trap, we achieve a loading rate of 8.4x10{sup 10} atoms/s and maximum number of 8.7x10{sup 9} captured atoms. The wire structure is placed outside of the vacuum to enable a further adaptation to new scientific objectives. Since all magnetic fields are applied locally without the need formore » external bias fields, the presented setup will facilitate parallel generation of Bose-Einstein condensates on a conveyor belt with a cycle rate above 1 Hz.« less

Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling

NASA Astrophysics Data System (ADS)

Racko, Juraj; Benko, Peter; Mikolášek, Miroslav; Granzner, Ralf; Kittler, Mario; Schwierz, Frank; Harmatha, Ladislav; Breza, Juraj

2017-02-01

The contribution employs electrical simulation to assess the effect of the distribution of aluminium in the metal/GaN/AlGaN heterostructure on the leakage current. The heterostructure is characterized by a high density of traps causing an increase of the leakage current consisting of the thermionic emission component and of a non-negligible contribution of trap-assisted tunnelling. The leakage current is highly sensitive to the bending of the potential barrier Ec in the subsurface region of the GaN/AlGaN structure. The band bending is strongly affected by the sheet bound charge at the first GaN/AlGaN/GaN interface due to spontaneous and piezoelectric polarization. The overall charge depends on the concentration of Al, the distribution of Al at the first heterointerface having a strong effect on the formation of the potential barrier.

Radiation pressure on a biconcave human Red Blood Cell and the resulting deformation in a pair of parallel optical traps.

PubMed

Liao, Guan-Bo; Chen, Yin-Quan; Bareil, Paul B; Sheng, Yunlong; Chiou, Arthur; Chang, Ming-Shien

2014-10-01

We calculated the three-dimensional optical stress distribution and the resulting deformation on a biconcave human red blood cell (RBC) in a pair of parallel optical trap. We assumed a Gaussian intensity distribution with a spherical wavefront for each trapping beam and calculated the optical stress from the momentum transfer associated with the reflection and refraction of the incident photons at each interface. The RBC was modelled as a biconcave thin elastic membrane with uniform elasticity and a uniform thickness of 0.25 μm. The resulting cell deformation was determined from the optical stress distribution by finite element software, Comsol Structure Mechanics Module, with Young's modulus (E) as a fitting parameter in order to fit the theoretical results for cell elongation to our experimental data. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of traps on the charge transport in semiconducting polymer PCDTBT

NASA Astrophysics Data System (ADS)

Khan, Mohd Taukeer; Agrawal, Vikash; Almohammedi, Abdullah; Gupta, Vinay

2018-07-01

Organic semiconductors (OSCs) are nowadays called upon as promising candidates for next generation electronics devices. Due to disorder structure of these materials, a high density of traps are present in their energy band gap which affect the performance of these devices. In the present manuscript, we have investigated the role of traps on charge transport in PCDTBT thin film by measuring the temperature dependent J(V) characteristics in hole only device configuration. The obtained results were analyzed by space charge limited (SCL) conduction model. It has been found that the room temperature J(V) characteristics follow Mott-Gurney square law for trap-free SCL conduction. But below 278 K, the current increases according to trap-filling SCL law with traps distributed exponentially in the band gap of semiconductor. Furthermore, after reaching a crossover voltage of VC ∽ 12 V, all the traps filled by injected carriers and the trap-filling SCL current switch to trap-free SCL current. The hole mobility of trap-free SCL current is about one order higher as compared trap-filling SCL current and remains constant with temperature.

High-fidelity entanglement between a trapped ion and a telecom photon via quantum frequency conversion.

PubMed

Bock, Matthias; Eich, Pascal; Kucera, Stephan; Kreis, Matthias; Lenhard, Andreas; Becher, Christoph; Eschner, Jürgen

2018-05-21

Entanglement between a stationary quantum system and a flying qubit is an essential ingredient of a quantum-repeater network. It has been demonstrated for trapped ions, trapped atoms, color centers in diamond, or quantum dots. These systems have transition wavelengths in the blue, red or near-infrared spectral regions, whereas long-range fiber-communication requires wavelengths in the low-loss, low-dispersion telecom regime. A proven tool to interconnect flying qubits at visible/NIR wavelengths to the telecom bands is quantum frequency conversion. Here we use an efficient polarization-preserving frequency converter connecting 854 nm to the telecom O-band at 1310 nm to demonstrate entanglement between a trapped 40 Ca + ion and the polarization state of a telecom photon with a high fidelity of 98.2 ± 0.2%. The unique combination of 99.75 ± 0.18% process fidelity in the polarization-state conversion, 26.5% external frequency conversion efficiency and only 11.4 photons/s conversion-induced unconditional background makes the converter a powerful ion-telecom quantum interface.

Hybrid Quantum Information Processing with Superconductors and Neutral Atoms

NASA Astrophysics Data System (ADS)

McDermott, Robert

Hybrid approaches to quantum information processing (QIP) aim to capitalize on the strengths of disparate quantum technologies to realize a system whose capabilities exceed those of any single experimental platform. At the University of Wisconsin, we are working toward integration of a fast superconducting quantum processor with a stable, long-lived quantum memory based on trapped neutral atoms. Here we describe the development of a quantum interface between superconducting thin-film cavity circuits and trapped Rydberg atoms, the key technological obstacle to realization of superconductor-atom hybrid QIP. Specific accomplishments to date include development of a theoretical protocol for high-fidelity state transfer between the atom and the cavity; fabrication and characterization of high- Q superconducting cavities with integrated trapping electrodes to enhance zero-point microwave fields at a location remote from the chip surface; and trapping and Rydberg excitation of single atoms within 1 mm of the cavity. We discuss the status of experiments to probe the strong coherent coupling of single Rydberg atoms and the superconducting cavity. Supported by ARO under contract W911NF-16-1-0133.

Heat transfer at a sapphire - indium interface in the 30 mK - 300 mK temperature range

NASA Astrophysics Data System (ADS)

Liberadzka, J.; Koettig, T.; Bremer, J.; van der Post, C. C. W.; ter Brake, H. J. M.

2017-02-01

Within the framework of the AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) project a direct measurement of the Earth’s gravitational acceleration on antihydrogen will be carried out. In order to obtain satisfactory precision of the measurement, the thermal movement of the particles should be reduced. Therefore a Penning trap, which is used to trap antiprotons and create antihydrogen, will be placed on a mixing chamber of an especially designed dilution refrigerator. The trap consists of 10 electrodes, which need to be electrically insulated, but thermally anchored. To ensure that the trap remains at a temperature below 100 mK, the heat transfer at the metallic-dielectric boundary is investigated. A copper - indium - sapphire - indium - copper sandwich setup was mounted on the CERN Cryolab dilution refrigerator. Keeping the mixing chamber at a constant low temperature in the range of 30 mK to 300 mK, steady-state measurements with indium in normal conducting and superconducting states have been performed. Obtained results along with a precise description of our setup are presented.