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Sample records for intrinsic semiconductors based

  1. SEMICONDUCTOR DEVICES Intrinsic stability of an HBT based on a small signal equivalent circuit model

    NASA Astrophysics Data System (ADS)

    Yanhu, Chen; Huajun, Shen; Xinyu, Liu; Huijun, Li; Hui, Xu; Ling, Li

    2010-12-01

    Intrinsic stability of the heterojunction bipolar transistor (HBT) was analyzed and discussed based on a small signal equivalent circuit model. The stability factor of the HBT device was derived based on a compact T-type small signal equivalent circuit model of the HBT. The effect of the mainly small signal model parameters of the HBT on the stability of the HBT was thoroughly examined. The discipline of parameter optimum to improve the intrinsic stability of the HBT was achieved. The theoretic analysis results of the stability were also used to explain the experimental results of the stability of the HBT and they were verified by the experimental results.

  2. SLM based semiconductor maskwriter

    NASA Astrophysics Data System (ADS)

    Diez, Steffen; Jehle, Achim

    2015-09-01

    The high-end semiconductor mask fabrication is dominated by e-beam technology. But still more than 50% of all semiconductor masks are produced by laser writers. The current laser writers are based on the same technology that was used 25 years ago. They are reliable and fast but not very economical. Heidelberg Instruments has developed a new economical and fast laser writer based on the latest technologies.

  3. Benzodipyrrolidone (BDP)-based polymer semiconductors containing a series of chalcogen atoms: comprehensive investigation of the effect of heteroaromatic blocks on intrinsic semiconducting properties.

    PubMed

    Lee, Kyu Cheol; Park, Won-Tae; Noh, Yong-Young; Yang, Changduk

    2014-04-01

    In order to determine the effects of actual 'chalcogen atoms' on semiconducting properties for application in a variety of optoelectronic devices, a class of donor (D)-acceptor (A) polymer semiconductors, namely PBDP-Fu, PBDP-Th, and PBDP-Se, containing the recently formulated benzodipyrrolidone (BDP) accepting unit and furan (Fu), thiophene (Th), or selenophene (Se) as a donating unit has been synthesized, characterized, and used in an active layer of organic field-effect transistors (OFETs). With the LUMO levels being comparatively consistent for all three polymers (-3.58 to -3.60 eV) due to the dominant BDP contribution to the polymer backbone, the HOMO energies are somewhat sensitive to the structurally distinctive feature of the donor counits used. Utilizing a combination of X-ray diffraction (XRD) and atomic force microscopy (AFM), it is apparent that further crystalline domains occur with edge-on orientation for the polymers (PBDP-Th and PBDP-Se) with relatively heavier chalcogen atoms such as Th and Se, compared with PBDP-Fu which has a rather amorphous nature. Investigation of their OFET performance indicates that all the polymers show well balanced ambipolar operations. The desirable morphological structures of both the PBDP-Th and PBDP-Se result in higher mobilities in OFETs than those of PBDP-Fu. In particular, 200 °C annealed PBDP-Se OFETs results in ambipolarity being mobile for both holes of up to 1.7 × 10(-2) cm(2)/V·s and electrodes of up to 1.9 × 10(-2) cm(2)/V·s. In addition, OFETs with PBDP-Th show nearly equivalent charge carrier mobilities for both holes (μ(h) = 1.2 × 10(-2) cm(2)/V·s) and electrons (μ(e) = 1.1 × 10(-2) cm(2)/V·s). Consequently, we systematically demonstrate how the manipulation of existing heteroaromatics can modulate the electronic properties of conjugated D-A polymers, elucidating structure-property relationships that are desirable for the rational design of next generation materials. PMID:24620709

  4. Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors (Presentation)

    SciTech Connect

    Lany, S.; Zunger, A.

    2008-05-01

    The conclusions of this report are: (1) intrinsic donor-type defects In{sub Cu}, Ga{sub Cu}, and V{sub Se}, and their complexes with V{sub Cu} cause metastability, but also act to limit V{sub OC}; (2) growth conditions which minimize these defects (Cu-rich/Se-rich) are very different from those currently used; and (3) overcoming V{sub OC} limitation requires to address other issues and trade-offs.

  5. Aqueous Based Semiconductor Nanocrystals.

    PubMed

    Jing, Lihong; Kershaw, Stephen V; Li, Yilin; Huang, Xiaodan; Li, Yingying; Rogach, Andrey L; Gao, Mingyuan

    2016-09-28

    This review summarizes traditional and recent nonconventional, bioinspired, methods for the aqueous synthesis of colloidal semiconductor quantum dots (QDs). The basic chemistry concepts are critically emphasized at the very beginning as these are strongly correlated with the selection of ligands and the optimal formation of aqueous QDs and their more sophisticated structures. The synergies of biomimetic and biosynthetic methods that can combine biospecific reactivity with the robust and strong optical responses of QDs have also resulted in new approaches to the synthesis of the nanoparticles themselves. A related new avenue is the recent extension of QD synthesis to form nanoparticles endowed with chiral optical properties. The optical characteristics of QD materials and their advanced forms such as core/shell heterostructures, alloys, and doped QDs are discussed: from the design considerations of optical band gap tuning, the control and reduction of the impact of surface traps, the consideration of charge carrier processes that affect emission and energy and charge transfer, to the impact and influence of lattice strain. We also describe the considerable progress in some selected QD applications such as in bioimaging and theranostics. The review concludes with future strategies and identification of key challenges that still need to be resolved in reaching very attractive, scalable, yet versatile aqueous syntheses that may widen the scope of commercial applications for semiconductor nanocrystals. PMID:27586892

  6. Charge Saturation and Intrinsic Doping in Electrolyte-Gated Organic Semiconductors.

    PubMed

    Atallah, Timothy L; Gustafsson, Martin V; Schmidt, Elliot; Frisbie, C Daniel; Zhu, X-Y

    2015-12-01

    Electrolyte gating enables low voltage operation of organic thin film transistors, but little is known about the nature of the electrolyte/organic interface. Here we apply charge-modulation Fourier transform infrared spectroscopy, in conjunction with electrical measurements, on a model electrolyte gated organic semiconductor interface: single crystal rubrene/ion-gel. We provide spectroscopic signature for free-hole like carriers in the organic semiconductor and unambiguously show the presence of a high density of intrinsic doping of the free holes upon formation of the rubrene/ion-gel interface, without gate bias (Vg = 0 V). We explain this intrinsic doping as resulting from a thermodynamic driving force for the stabilization of free holes in the organic semiconductor by anions in the ion-gel. Spectroscopy also reveals the saturation of free-hole like carrier density at the rubrene/ion-gel interface at Vg < -0.5 V, which is commensurate with the negative transconductance seen in transistor measurements. PMID:26588805

  7. Unusual nonlinear current-voltage characteristics of a metal-intrinsic semiconductor-metal barrierless structure

    NASA Astrophysics Data System (ADS)

    Meriuts, A. V.; Gurevich, Yu. G.

    2015-03-01

    A nonlinear model for the electric current in a metal-intrinsic semiconductor-metal structure without potential barriers in contacts is considered using a drift diffusion approach. An analytical solution of the continuity equations and the current-voltage characteristic for various recombination rates in the contacts are obtained. It is shown that the current-voltage characteristics of such a structure exhibit not only linear behavior, corresponding to Ohm's law, but may also possess properties of current-voltage characteristics of the rectifier diode. It is also possible current-voltage characteristics with saturation in both forward and backward directions. Physical model that explains the obtained results is proposed.

  8. Intrinsic delay of permeable base transistor

    SciTech Connect

    Chen, Wenchao; Guo, Jing; So, Franky

    2014-07-28

    Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barrier height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of ∼10 cm{sup 2}/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations.

  9. Photogenerated Intrinsic Free Carriers in Small-molecule Organic Semiconductors Visualized by Ultrafast Spectroscopy

    PubMed Central

    He, Xiaochuan; Zhu, Gangbei; Yang, Jianbing; Chang, Hao; Meng, Qingyu; Zhao, Hongwu; Zhou, Xin; Yue, Shuai; Wang, Zhuan; Shi, Jinan; Gu, Lin; Yan, Donghang; Weng, Yuxiang

    2015-01-01

    Confirmation of direct photogeneration of intrinsic delocalized free carriers in small-molecule organic semiconductors has been a long-sought but unsolved issue, which is of fundamental significance to its application in photo-electric devices. Although the excitonic description of photoexcitation in these materials has been widely accepted, this concept is challenged by recently reported phenomena. Here we report observation of direct delocalized free carrier generation upon interband photoexcitation in highly crystalline zinc phthalocyanine films prepared by the weak epitaxy growth method using ultrafast spectroscopy. Transient absorption spectra spanning the visible to mid-infrared region revealed the existence of short-lived free electrons and holes with a diffusion length estimated to cross at least 11 molecules along the π−π stacking direction that subsequently localize to form charge transfer excitons. The interband transition was evidenced by ultraviolet-visible absorption, photoluminescence and electroluminescence spectroscopy. Our results suggest that delocalized free carriers photogeneration can also be achieved in organic semiconductors when the molecules are packed properly. PMID:26611323

  10. Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu2ZnSnS4

    NASA Astrophysics Data System (ADS)

    Chen, Shiyou; Yang, Ji-Hui; Gong, X. G.; Walsh, Aron; Wei, Su-Huai

    2010-06-01

    Current knowledge of the intrinsic defect properties of Cu2ZnSnS4 (CZTS) is limited, which is hindering further improvement of the performance of CZTS-based solar cells. Here, we have performed first-principles calculations for a series of intrinsic defects and defect complexes in CZTS, from which we have the following observations. (i) It is important to control the elemental chemical potentials during crystal growth to avoid the formation of secondary phases such as ZnS, CuS, and Cu2SnS3 . (ii) The intrinsic p -type conductivity is attributed to the CuZn antisite which has a lower formation energy and relatively deeper acceptor level compared to the Cu vacancy. (iii) The low formation energy of many of the acceptor defects will lead to the intrinsic p -type character, i.e., n -type doping is very difficult in this system. (iv) The role of electrically neutral defect complexes is predicted to be important, because they have remarkably low formation energies and electronically passivate deep levels in the band gap. For example, [CuZn-+ZnCu+] , [VCu-+ZnCu+] , and [ZnSn2-+2ZnCu+] may form easily in nonstoichiometric samples. The band alignment between Cu2ZnSnS4 , CuInSe2 and the solar-cell window layer CdS has also been calculated, revealing that a type-II band alignment exists for the CdS/Cu2ZnSnS4 heterojunction. The fundamental differences between CZTS and CuInSe2 for use in thin-film photovoltaics are discussed. The results are expected to be relevant to other I2-II-IV-VI4 semiconductors.

  11. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  12. Metal-free ferromagnetic metal and intrinsic spin semiconductor: two different kinds of SWCNT functionalized BN nanoribbons.

    PubMed

    Lou, Ping

    2015-03-28

    Two different kinds of SWCNT functionalized zigzag edge BN nanoribbons with n chains (n-ZBNNRs), namely, (a) B-edge functionalized by (m,m)SWCNT and N-edge modified with H (nZBNNR-B-(m,m)SWCNTs); and (b) the B-edge modified with H and the N-edge functionalized by (m,m)SWCNT (nZBNNR-N-(m,m)SWCNTs), have been predicted. Amazingly, we find that unlike the semiconducting and nonmagnetic H-modified n-ZBNNRs, the nZBNNR-B-(m,m)SWCNTs are intrinsic ferromagnetic metals, regardless of ribbon widths n and tube diameters (m,m). At a given (m,m), their local magnetic moments, at first, exhibit oscillation with increasing n, whereas when n is larger than 5, they are independent of n. In contrast, unlike the metallic and nonmagnetic (m,m)SWCNTs, the nZBNNR-N-(m,m)SWCNTs are ferromagnetic intrinsic spin-semiconductors with direct band gaps, regardless of n and (m,m). Their local magnetic moments and band gaps are independent of n and (m,m). The DFT calculations reveal that the process of SWCNT functionalization of the n-ZBNNRs does not need any activation energy. Moreover, the formation energies of the SWCNT functionalized n-ZBNNRs are always less than zero. Therefore, the SWCNT functionalized n-ZBNNRs are not only stable, but can also be spontaneously formed. Furthermore, compared with n-ZBNNRs, the SWCNT functionalized n-ZBNNRs show significant improvements in their thermal and mechanical stabilities. Thus, (m,m)SWCNT functionalization of n-ZBNNRs may open new routes toward practical nanoelectronic and optoelectronic as well as spintronic devices based on BNC-based materials. PMID:25721493

  13. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  14. Optical Biosensors Based on Semiconductor Nanostructures

    PubMed Central

    Martín-Palma, Raúl J.; Manso, Miguel; Torres-Costa, Vicente

    2009-01-01

    The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented. PMID:22346691

  15. Transport phenomena in intrinsic semiconductors and insulators at high current densities: Suppression of the broken neutrality drift

    SciTech Connect

    Mnatsakanov, T. T.; Tandoev, A. G.; Yurkov, S. N.; Levinshtein, M. E.

    2013-08-14

    It is shown that, in addition to the diffusion and broken neutrality drift (BND) modes well-known for insulators and very lightly doped semiconductors, the quasineutral drift (QND) mode is possible. The transition from the BND to QND mode is accompanied by the appearance of a portion with a very sharp current rise in the current-voltage characteristic. This effect is observed in a new type of semiconductor detectors (CIDs, Current Injected Detectors) of high-intensity neutron and proton radiation, suggested, in particular, for Large Hadron Collider. The effect is unambiguously attributed now to the presence of radiation-induced deep centers in a semiconductor. It is shown, however, in this paper that the effect of a very sharp rise in current upon a slight increase in voltage is even possible when there are no deep centers. An equation adequately describing the possible transport modes in intrinsic semiconductors and insulators is derived. The results of an analytical study are confirmed by an adequate simulation.

  16. Ferromagnet/semiconductor based spintronic devices

    NASA Astrophysics Data System (ADS)

    Saha, Dipankar

    Spintronics is an emerging field which is great interest for its potential to provide high-speed and low-power novel devices and eventually replace and/or complement conventional silicon-based metal-oxide-semiconductor (MOS) devices. Spin-based optoelectronic devices provide improved laser performance and polarized light sources for secure communication. Spintronics has therefore received a lot of interest with the potential for conventional and novel applications. Spintronics has been investigated both in all-metal and semiconductor based platforms. Spin-based ferromagnet/semiconductor heterojunction devices are particularly attractive compared to all-metal spintronic devices due to the versatility and the long electron spin coherence time in semiconductors. Here we have investigated semiconductor based spintronic devices for logic, memory and communication applications. We have demonstrated electrical injection and detection of spin in a MnAs/GaAs lateral spin valve. A peak magnetoresistance of 3.6% at 10 K and 1.1% at 125 K have been measured in these devices. Spin polarization in semiconductors is usually very small and difficult to detect. We have therefore theoretically designed and experimentally demonstrated a spin-current amplifier to alleviate this problem. A spin polarization of 100% has been measured at 150 K in these devices. We have emphasized the importance of finite sizes of ferromagnetic contact pads in terms of two-dimensional spin-diffusion in lateral spintronic devices, which enhances spin-polarization. We have discovered a new phenomenon observing electrically driven spin-dynamics of paramagnetic impurities. We have demonstrated a spin-capacitor using this novel phenomenon. In this study we have also demonstrated a spin-polarized quantum dot spin-laser which is a fundamental spin-based optoelectronic device. An output circular polarization of 8% and threshold current reduction of 14% have been measured at 200 K. We have also demonstrated

  17. Estimation of entropy rate in a fast physical random-bit generator using a chaotic semiconductor laser with intrinsic noise.

    PubMed

    Mikami, Takuya; Kanno, Kazutaka; Aoyama, Kota; Uchida, Atsushi; Ikeguchi, Tohru; Harayama, Takahisa; Sunada, Satoshi; Arai, Ken-ichi; Yoshimura, Kazuyuki; Davis, Peter

    2012-01-01

    We analyze the time for growth of bit entropy when generating nondeterministic bits using a chaotic semiconductor laser model. The mechanism for generating nondeterministic bits is modeled as a 1-bit sampling of the intensity of light output. Microscopic noise results in an ensemble of trajectories whose bit entropy increases with time. The time for the growth of bit entropy, called the memory time, depends on both noise strength and laser dynamics. It is shown that the average memory time decreases logarithmically with increase in noise strength. It is argued that the ratio of change in average memory time with change in logarithm of noise strength can be used to estimate the intrinsic dynamical entropy rate for this method of random bit generation. It is also shown that in this model the entropy rate corresponds to the maximum Lyapunov exponent.

  18. Semiconductor nanocrystal-based phagokinetic tracking

    DOEpatents

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  19. Intrinsic feature-based pose measurement for imaging motion compensation

    DOEpatents

    Baba, Justin S.; Goddard, Jr., James Samuel

    2014-08-19

    Systems and methods for generating motion corrected tomographic images are provided. A method includes obtaining first images of a region of interest (ROI) to be imaged and associated with a first time, where the first images are associated with different positions and orientations with respect to the ROI. The method also includes defining an active region in the each of the first images and selecting intrinsic features in each of the first images based on the active region. Second, identifying a portion of the intrinsic features temporally and spatially matching intrinsic features in corresponding ones of second images of the ROI associated with a second time prior to the first time and computing three-dimensional (3D) coordinates for the portion of the intrinsic features. Finally, the method includes computing a relative pose for the first images based on the 3D coordinates.

  20. The Effect of Exciton-Delocalizing Thiols on Intrinsic Dual Emitting Semiconductor Nanocrystals.

    PubMed

    Jethi, Lakshay; Mack, Timothy G; Krause, Michael M; Drake, Sebastian; Kambhampati, Patanjali

    2016-03-01

    The emissive properties of thiol-capped CdSe nanocrystals (NCs) with intrinsic dual emission are investigated through temperature-dependent photoluminescence (PL) measurements. We demonstrate the influence of thiols on the relative PL intensities of the core and surface emissive states, as well as on the observed Stokes shifts. A redshift of both the core and surface PL in comparison with phosphonate-capped NCs is consistent with recent work exploring the effect of thiols as excitonic hole-delocalizing ligands. This observation is consistent with prior reports suggesting that surface excitons originate from electrons bound to cadmium trap states. PMID:26752223

  1. Semiconductor-Nanowire-Based Superconducting Qubit.

    PubMed

    Larsen, T W; Petersson, K D; Kuemmeth, F; Jespersen, T S; Krogstrup, P; Nygård, J; Marcus, C M

    2015-09-18

    We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (~0.8 μs) and dephasing times (~1 μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information. PMID:26431009

  2. Semiconductor-Nanowire-Based Superconducting Qubit

    NASA Astrophysics Data System (ADS)

    Larsen, T. W.; Petersson, K. D.; Kuemmeth, F.; Jespersen, T. S.; Krogstrup, P.; Nygârd, J.; Marcus, C. M.

    2015-09-01

    We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (˜0.8 μ s ) and dephasing times (˜1 μ s ), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.

  3. Identification of intrinsic deep level defects responsible for electret behavior in TlGaSe2 layered semiconductor

    NASA Astrophysics Data System (ADS)

    Seyidov, MirHasan Yu.; Mikailzade, Faik A.; Uzun, Talip; Odrinsky, Andrei P.; Yakar, Emin; Aliyeva, Vafa B.; Babayev, Sardar S.; Mammadov, Tofig G.

    2016-02-01

    Unusual behavior of pyroelectric current signal polarity near the Curie point (Tc) was observed for TlGaSe2 a ferroelectric-semiconductor. It has been revealed that the polarity of the spontaneous polarization near Tc depends on the sample poling prehistory. In particular, applying an external electric field only in the temperature range of the paraelectric state during cooling regime in darkness brought to the depolarization current at Tc with the sign opposite to the external field polarity. Otherwise, if the sample was poled in the temperature interval of the incommensurate phase, pyroelectric current exhibits a peak at Tc with the polarity that is the same as for the external poling electric field. These observations indicate that internal electric field is present in the bulk and near-surface layer regions of the electrically poled single crystal TlGaSe2. Possible mechanisms and origins responsible for the internal electric fields in TlGaSe2 are discussed. It is shown that the formation of internal electric fields in TlGaSe2 is due to charging of intrinsic native defects during the poling process. Characteristics of electrically active intrinsic defects in TlGaSe2 were investigated by using of Photo-Induced Current Transient Spectroscopy (PICTS) technique. Six deep defect levels in the band gap of TlGaSe2 were determined, which were localized both in the bulk and on the surface of the sample and could be electrically charged. The correlation between polarization effects and PICTS results has been established. It was shown that native deep defects (A3-A6) localized in the bulk of crystal are responsible for hetero-charge formation and negative sign of the pyroelectric current peak observed around the Curie temperature after poling the sample in the temperature intervals well above Tc. It was also shown that the positive sign pyrocurrent observed near the Curie point is attributed to the homo-charge formed by native A2-trapping centers which are localized near

  4. The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction

    NASA Astrophysics Data System (ADS)

    Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Kao, S.-C.

    2012-05-01

    Based on the stress extraction and measurement by atomic force microscope-Raman technique with the nanometer level space resolution, the high compressive stress about 550 MPa on the Si active region (OD) is observed for the current complementary metal-oxide-semiconductor (CMOS) transistor. During the thermal budget for the standard manufacture process of the current CMOS transistor, the difference of thermal expansion coefficients between Si and Shallow Trench Isolation (STI) oxide results in this high compressive stress in Si OD and further degrades the electron carrier mobility seriously. In order to relax this intrinsic processed compressive stress in Si OD and try to recover this performance loss, the novel process is proposed in this work in addition to the usage of one-side pad SiN layer. With this novel process of additional N-ion implantation (IMP) treatment in STI oxide, it can be found that the less compressive stress about 438 MPa in Si OD can be achieved by the smaller difference of thermal expansion coefficients between Si and N-doped SiO2 STI oxide. The formation of Si-N bonding in N-doped SiO2 STI region can be monitored by Fourier transform infrared spectroscopy spectra and thermal expansion coefficients for Si, SiO2, and SiN are 2.6 ppm/K, 0.4 ppm/K, and 2.87 ppm/K, respectively. The effective relaxation of intrinsic processed compressive stress in Si OD about 112 MPa (from 550 MPa to 438 MPa) by this proposed additional N IMP treatment contributes ˜14% electron carrier mobility enhancement/recovery. The experimental electrical data agree well with the theoretical piezoelectricity calculation for the strained-Si theory.

  5. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

    NASA Astrophysics Data System (ADS)

    Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2014-10-01

    We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations including the self-consistent solution of the electrostatic and transport equations within the Non-Equilibrium Green's Function formalism. We show that the lateral heterostructure transistor has the potential to outperform CMOS technology and to meet the requirements of the International Technology Roadmap for Semiconductors for the next generation of semiconductor integrated circuits. On the other hand, we find that vertical heterostructure transistors miss these performance targets by several orders of magnitude, both in terms of switching frequency and delay time, due to large intrinsic capacitances, and unavoidable current/capacitance tradeoffs.

  6. Terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors

    NASA Astrophysics Data System (ADS)

    Hwang, J. S.; Lin, H. C.; Lin, K. I.; Zhang, X. C.

    2005-09-01

    This study examines terahertz radiation from a series of In0.52Al0.48As and GaAs surface-intrinsic-N+ structures (SIN+) with surface-intrinsic layers of various thicknesses. The built-in electric fields in the SIN+ structures are used as the bias. Experimental results indicate that the amplitudes of the THz emission are independent of the built-in electric fields in the emitters when the built-in electric fields exceed the corresponding critical electric fields of the semiconductors. In contrast, the amplitudes of the THz emission are proportional to the thickness of the intrinsic layer and, therefore, the number of photo-excited charged carriers.

  7. Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

    PubMed Central

    Irokawa, Yoshihiro

    2011-01-01

    In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C–V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C–V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C–V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I–V) characterization, suggesting that low-frequency C–V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

  8. Hydrogen sensors using nitride-based semiconductor diodes: the role of metal/semiconductor interfaces.

    PubMed

    Irokawa, Yoshihiro

    2011-01-01

    In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C-V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C-V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C-V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I-V) characterization, suggesting that low-frequency C-V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

  9. All-semiconductor metamaterial-based optical circuit board at the microscale

    SciTech Connect

    Min, Li; Huang, Lirong

    2015-07-07

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  10. Incremental learning of skill collections based on intrinsic motivation.

    PubMed

    Metzen, Jan H; Kirchner, Frank

    2013-01-01

    Life-long learning of reusable, versatile skills is a key prerequisite for embodied agents that act in a complex, dynamic environment and are faced with different tasks over their lifetime. We address the question of how an agent can learn useful skills efficiently during a developmental period, i.e., when no task is imposed on him and no external reward signal is provided. Learning of skills in a developmental period needs to be incremental and self-motivated. We propose a new incremental, task-independent skill discovery approach that is suited for continuous domains. Furthermore, the agent learns specific skills based on intrinsic motivation mechanisms that determine on which skills learning is focused at a given point in time. We evaluate the approach in a reinforcement learning setup in two continuous domains with complex dynamics. We show that an intrinsically motivated, skill learning agent outperforms an agent which learns task solutions from scratch. Furthermore, we compare different intrinsic motivation mechanisms and how efficiently they make use of the agent's developmental period.

  11. Incremental learning of skill collections based on intrinsic motivation

    PubMed Central

    Metzen, Jan H.; Kirchner, Frank

    2013-01-01

    Life-long learning of reusable, versatile skills is a key prerequisite for embodied agents that act in a complex, dynamic environment and are faced with different tasks over their lifetime. We address the question of how an agent can learn useful skills efficiently during a developmental period, i.e., when no task is imposed on him and no external reward signal is provided. Learning of skills in a developmental period needs to be incremental and self-motivated. We propose a new incremental, task-independent skill discovery approach that is suited for continuous domains. Furthermore, the agent learns specific skills based on intrinsic motivation mechanisms that determine on which skills learning is focused at a given point in time. We evaluate the approach in a reinforcement learning setup in two continuous domains with complex dynamics. We show that an intrinsically motivated, skill learning agent outperforms an agent which learns task solutions from scratch. Furthermore, we compare different intrinsic motivation mechanisms and how efficiently they make use of the agent's developmental period. PMID:23898265

  12. Doped semiconductor nanocrystal based fluorescent cellular imaging probes

    NASA Astrophysics Data System (ADS)

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, Sk; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R.

    2013-05-01

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity. Electronic supplementary information available: Characterization details of coating and

  13. Photocurrents in semiconductors and semiconductor quantum wells analyzed by k.p-based Bloch equations

    NASA Astrophysics Data System (ADS)

    Podzimski, Reinold; Duc, Huynh Thanh; Priyadarshi, Shekhar; Schmidt, Christian; Bieler, Mark; Meier, Torsten

    2016-03-01

    Using a microscopic theory that combines k.p band structure calculations with multisubband semiconductor Bloch equations we are capable of computing coherent optically-induced rectification, injection, and shift currents in semiconductors and semiconductor nanostructures. A 14-band k.p theory has been employed to obtain electron states in non-centrosymmetric semiconductor systems. Numerical solutions of the multisubband Bloch equations provide a detailed and transparent description of the dynamics of the material excitations in terms of interband and intersubband polarizations/coherences and occupations. Our approach allows us to calculate and analyze photocurrents in the time and the frequency domains for bulk as well as quantum well and quantum wire systems with various growth directions. As examples, we present theoretical results on the rectification and shift currents in bulk GaAs and GaAs-based quantum wells. Moreover, we compare our results with experiments on shift currents. In the experiments the terahertz radiation emitted from the transient currents is detected via electro-optic sampling. This comparison is important from two perspectives. First, it helps to validate the theoretical model. Second, it allows us to investigate the microscopic origins of interesting features observed in the experiments.

  14. Triptycene-Based Organic Molecules of Intrinsic Microporosity

    PubMed Central

    2014-01-01

    Four Organic Molecules of Intrinsic Microporosity (OMIMs) were prepared by fusing triptycene-based components to a biphenyl core. Due to their rigid molecular structures that cannot pack space efficiently, these OMIMs form amorphous materials with significant microporosity as demonstrated by apparent BET surface areas in the range of 515–702 m2 g–1. Bulky cyclic 1′,2′,3′,4′-tetrahydro-1′,1′,4′,4′-tetramethylbenzo units placed on the triptycene termini are especially efficient at enhancing microporosity. PMID:24635193

  15. Ag-based semiconductor photocatalysts in environmental purification

    NASA Astrophysics Data System (ADS)

    Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; zhu, Lihua; Xie, Yu

    2015-12-01

    Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO2, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag-based semiconductor could produce high efficient composite photocatalyts.

  16. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)

    NASA Astrophysics Data System (ADS)

    Yitamben, E. N.; Lovejoy, T. C.; Pakhomov, A. B.; Heald, S. M.; Negusse, E.; Arena, D.; Ohuchi, F. S.; Olmstead, M. A.

    2011-01-01

    Chromium-doped gallium sesquiselenide, Cr:Ga2Se3, is a member of a new class of dilute magnetic semiconductors exploiting intrinsic vacancies in the host material. The correlation among room-temperature ferromagnetism, surface morphology, electronic structure, chromium concentration, and local chemical and structural environments in Cr:Ga2Se3 films grown epitaxially on silicon is investigated with magnetometry, scanning tunneling microscopy, photoemission spectroscopy, and x-ray absorption spectroscopy. Inclusion of a few percent chromium in Ga2Se3 results in laminar, semiconducting films that are ferromagnetic at room temperature with a magnetic moment ⩾4μB/Cr. The intrinsic-vacancy structure of defected-zinc-blende β-Ga2Se3 enables Cr incorporation in a locally octahedral site without disrupting long-range order, determined by x-ray absorption spectroscopy, as well as strong overlap between Cr 3d states and the Se 4p states lining the intrinsic-vacancy rows, observed with photoemission. The highest magnetic moment per Cr is observed near the solubility limit of roughly one Cr per three vacancies. At higher Cr concentrations, islanded, metallic films result, with a magnetic moment that depends strongly on surface morphology. The effective valence is Cr3+ in laminar films, with introduction of Cr0 upon islanding. A mechanism is proposed for laminar films whereby ordered intrinsic vacancies mediate ferromagnetism.

  17. Semiconductor-based DNA sequencing of histone modification states.

    PubMed

    Cheng, Christine S; Rai, Kunal; Garber, Manuel; Hollinger, Andrew; Robbins, Dana; Anderson, Scott; Macbeth, Alyssa; Tzou, Austin; Carneiro, Mauricio O; Raychowdhury, Raktima; Russ, Carsten; Hacohen, Nir; Gershenwald, Jeffrey E; Lennon, Niall; Nusbaum, Chad; Chin, Lynda; Regev, Aviv; Amit, Ido

    2013-01-01

    The recent development of a semiconductor-based, non-optical DNA sequencing technology promises scalable, low-cost and rapid sequence data production. The technology has previously been applied mainly to genomic sequencing and targeted re-sequencing. Here we demonstrate the utility of Ion Torrent semiconductor-based sequencing for sensitive, efficient and rapid chromatin immunoprecipitation followed by sequencing (ChIP-seq) through the application of sample preparation methods that are optimized for ChIP-seq on the Ion Torrent platform. We leverage this method for epigenetic profiling of tumour tissues. PMID:24157732

  18. Semiconductor-based DNA sequencing of histone modification states

    PubMed Central

    Cheng, Christine S.; Rai, Kunal; Garber, Manuel; Hollinger, Andrew; Robbins, Dana; Anderson, Scott; Macbeth, Alyssa; Tzou, Austin; Carneiro, Mauricio O.; Raychowdhury, Raktima; Russ, Carsten; Hacohen, Nir; Gershenwald, Jeffrey E.; Lennon, Niall; Nusbaum, Chad; Chin, Lynda; Regev, Aviv; Amit, Ido

    2013-01-01

    The recent development of a semiconductor-based, non-optical DNA sequencing technology promises scalable, low-cost and rapid sequence data production. The technology has previously been applied mainly to genomic sequencing and targeted re-sequencing. Here we demonstrate the utility of Ion Torrent semiconductor-based sequencing for sensitive, efficient and rapid chromatin immunoprecipitation followed by sequencing (ChIP-seq) through the application of sample preparation methods that are optimized for ChIP-seq on the Ion Torrent platform. We leverage this method for epigenetic profiling of tumour tissues. PMID:24157732

  19. Key techniques for space-based solar pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  20. Changing the Environment Based on Empowerment as Intrinsic Motivation

    NASA Astrophysics Data System (ADS)

    Salge, Christoph; Glackin, Cornelius; Polani, Daniel

    2014-05-01

    One aspect of intelligence is the ability to restructure your own environment so that the world you live in becomes more beneficial to you. In this paper we investigate how the information-theoretic measure of agent empowerment can provide a task-independent, intrinsic motivation to restructure the world. We show how changes in embodiment and in the environment change the resulting behaviour of the agent and the artefacts left in the world. For this purpose, we introduce an approximation of the established empowerment formalism based on sparse sampling, which is simpler and significantly faster to compute for deterministic dynamics. Sparse sampling also introduces a degree of randomness into the decision making process, which turns out to beneficial for some cases. We then utilize the measure to generate agent behaviour for different agent embodiments in a Minecraft-inspired three dimensional block world. The paradigmatic results demonstrate that empowerment can be used as a suitable generic intrinsic motivation to not only generate actions in given static environments, as shown in the past, but also to modify existing environmental conditions. In doing so, the emerging strategies to modify an agent's environment turn out to be meaningful to the specific agent capabilities, i.e., de facto to its embodiment.

  1. Anisotropy-based crystalline oxide-on-semiconductor material

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

  2. Ring resonator based narrow-linewidth semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Ksendzov, Alexander (Inventor)

    2005-01-01

    The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

  3. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  4. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

    PubMed

    Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2015-01-14

    The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

  5. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-01

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response. PMID:27295453

  6. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-01

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.

  7. Method of plasma etching Ga-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  8. Study of the new diluted magnetic semiconductors based on the doping of iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Li; Feng, Shan; Li, Linxian; Wang, Shaolei; Li, Yuke

    Diluted magnetic semiconductors(DMSs) have attracted increasing attention because of their potential applications in spintronics. Recently, a series of new bulk DMS materialswere synthesized by doping in the 122 and 1111 phases of iron-based superconductors(Fe-SC), which sheds light on the DMS research[3]. In this report, we have synthesized two systems of 1111 phases of DMSs based on Fe-SC materials (La1-xSrx) (Ag0.925 Mn0.075) SO(x =0, 0.025, 0.05, 0.075 and 0.1) and (Y1-xSrx) (Cu0.925 Mn0.075) SO (x =0, 0.025, 0.05,0.075 and 0.1) by solid state method. The structure and electrical, magnetic and optical properties have been investigated by means of XRD, 4KCCS, MPMS, PL, UV-Vis and Raman technique, respectively. Some interesting phenomena are found (Such as the Curie temperature Tc and band-gap energy Eg change regularly with the dopants additon). The results are helpful to clarify the intrinsic mechanism of the DMSs, and will provide new insights on the fabrication and application of devices based on these materials. This work was supported by the National Science Foundation of China (Grant No 61376094). Li Zhang would like to acknowledge a scholarship Granted by China Scholarship Council (CSC-201408330028)

  9. Intrinsic life-time and external manipulation of Néel states in antiferromagnetic adatom spins on semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Li, Jun; Liu, Bang-Gui

    2015-06-01

    It has been proposed that antiferromagnetic Fe adatom spins on semiconductor Cu-N surfaces can be used to store information (Loth et al 2012 Science 335 196). Here, we investigate spin dynamics of such antiferromagnetic systems through Monte Carlo simulations. We find out the temperature and size laws of switching rates of Néel states and show that the Néel states can become stable enough for the information storage when the number of spins reaches one or two dozens of the Fe spins. We also explore promising methods for manipulating the Néel states. These could help realize information storage with such antiferromagnetic spin systems.

  10. Semiconductor-nanocrystals-based white light-emitting diodes.

    PubMed

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z

    2010-08-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white light-emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

  11. Semiconductor Nanocrystals-Based White Light Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Hu, Michael Z.; Duty, Chad E

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

  12. Semiconductor-Nanocrystals-Based White Light-Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z.

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

  13. Method of plasma etching GA-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  14. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    SciTech Connect

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  15. Optically induced transport through semiconductor-based molecular electronics

    SciTech Connect

    Li, Guangqi; Seideman, Tamar; Fainberg, Boris D.

    2015-04-21

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  16. Demonstration of a home projector based on RGB semiconductor lasers.

    PubMed

    Zhang, Yunfang; Dong, Hui; Wang, Rui; Duan, Jingyuan; Shi, Ancun; Fang, Qing; Liu, Yuliang

    2012-06-01

    In this paper, we demonstrate a high-definition 3-liquid-crystal-on-silicon (3-LCOS) home cinema projection system based on RGB laser source modules. Both red and blue laser modules are composed of an array of laser diodes, and the green laser is based on an optically pumped semiconductor laser. The illumination engine is designed to realize high energy efficiency, uniform illumination, and suppression of speckle noise. The presented laser projection system producing 1362 lm D65 light has a volume of about 450×360×160  mm3.

  17. Demonstration of a home projector based on RGB semiconductor lasers.

    PubMed

    Zhang, Yunfang; Dong, Hui; Wang, Rui; Duan, Jingyuan; Shi, Ancun; Fang, Qing; Liu, Yuliang

    2012-06-01

    In this paper, we demonstrate a high-definition 3-liquid-crystal-on-silicon (3-LCOS) home cinema projection system based on RGB laser source modules. Both red and blue laser modules are composed of an array of laser diodes, and the green laser is based on an optically pumped semiconductor laser. The illumination engine is designed to realize high energy efficiency, uniform illumination, and suppression of speckle noise. The presented laser projection system producing 1362 lm D65 light has a volume of about 450×360×160  mm3. PMID:22695597

  18. The Relationships among Measures of Intrinsic Motivation, Instructional Design, and Learning in Computer-Based Instruction.

    ERIC Educational Resources Information Center

    Rezabek, Randy

    The intent of this study was to explore the intrinsic aspects of motivation, and to see if the design of instruction could positively affect learners' levels of intrinsic motivation toward the subject matter. The following questions were addressed: (1) Will different computer-based instructional treatments which have been designed to reflect…

  19. Sapphire-fiber-based intrinsic Fabry-Perot interferometer

    NASA Technical Reports Server (NTRS)

    Wang, Anbo; Gollapudi, Sridhar; Murphy, Kent A.; May, Russell G.; Claus, Richard O.

    1992-01-01

    A sapphire optical fiber intrinsic Fabry-Perot interferometric sensor is demonstrated. A length of multimode sapphire fiber that functions as a Fabry-Perot cavity is spliced to a silica single-mode fiber. The interferometric signals of this sensor are produced by the interference between the reflection from the silica-sapphire fiber splice and the reflection from the free end face of the sapphire fiber. This sensor has been demonstrated for temperature measurement. A resolution of 0.2 C has been obtained over a measurement range of 310 C to 976 C.

  20. Semiconductor product analysis challenges based on the 1999 ITRS

    SciTech Connect

    JOSEPH,THOMAS W.; ANDERSON,RICHARD E.; GILFEATHER,GLEN; LECLAIRE,CAROLE; YIM,DANIEL

    2000-05-30

    One of the most significant challenges for technology characterization and future analysis is to keep instrumentation and techniques in step with the development of technology itself. Not only are dimensions shrinking and new materials being employed, but the rate of change is increasing. According to the 1999 International Technology Roadmap for Semiconductors (ITRS) the number and difficulty of the technical challenges continue to increase as technology moves forward. It could be argued that technology cannot be developed without appropriate analytical technique, nevertheless while much effort is being directed at materials and processes, only a small proportion is being directed at analysis. Whereas previous versions of the Semiconductor Industry Association roadmap contained a small number of implicit references to characterization and analysis, the 1999 ITRS contains many explicit references. It is clear that characterization is now woven through the roadmap, and technology developers in all areas appreciate the fact that new instrumentation and techniques will be required to sustain the rate of development the semiconductor industry has seen in recent years. Late in 1999, a subcommittee of the Sematech Product Analysis Forum reviewed the ITRS and identified a top-ten list of challenges which the failure analysis community will face as present technologies are extended and future technologies are developed. This paper discusses the PAF top-ten list of challenges, which is based primarily on the Difficult Challenges tables from each ITRS working group. Eight of the top-ten are challenges of significant technical magnitude, only two could be considered non-technical in nature. Most of these challenges cut across several working group areas and could be considered common threads in the roadmap, ranging from fault simulation and modeling to imaging small features, from electrical defect isolation to reprocessing.

  1. Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2016-02-01

    Peculiarities in determining the dopant concentration and dopant distribution profile in the near-surface layer of a semiconductor are investigated by measuring the admittance of metal-insulator-semiconductor structures (MIS structures) based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy. The dopant concentrations in the near-surface layer of the semiconductor are determined by measuring the admittance of MIS structures in the frequency range of 50 kHz to 1 MHz. It is shown that in this frequency range, the capacitance-voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded gap layer demonstrate a high-frequency behavior with respect to the recharge time of surface states located near the Fermi level for an intrinsic semiconductor. The formation time of the inversion layer is decreased by less than two times, if a near-surface graded-gap layer is created. The dopant distribution profile in the near-surface layer of the semiconductor is found, and it is shown that for structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has a minimum near the interface with the insulator. For MIS structure based on n-Hg0.78Cd0.22Te, the dopant concentration is more uniformly distributed in the near-surface layer of the semiconductor.

  2. Delay-based reservoir computing using semiconductor ring lasers

    NASA Astrophysics Data System (ADS)

    Nguimdo, Romain Modeste; Danckaert, Jan; Verschaffelt, Guy; Van der Sande, Guy

    2014-05-01

    Delay systems subject to delayed optical feedback have recently shown great potential in solving computationally hard tasks. By implementing a neuro-inspired computational scheme relying on the transient response to optical data injection, high processing speeds have been demonstrated. However, reservoir computing systems based on delay dynamics discussed in the literature are designed by coupling many different stand-alone components which lead to bulky, lack of long-term stability, non-monolithic systems. Here we numerically investigate the possibility of implementing reservoir computing schemes based on semiconductor ring lasers as they are scalable and can be easily implemented on chip. We numerically benchmark our system on a chaotic time-series prediction task.

  3. Optimization algorithm based characterization scheme for tunable semiconductor lasers.

    PubMed

    Chen, Quanan; Liu, Gonghai; Lu, Qiaoyin; Guo, Weihua

    2016-09-01

    In this paper, an optimization algorithm based characterization scheme for tunable semiconductor lasers is proposed and demonstrated. In the process of optimization, the ratio between the power of the desired frequency and the power except of the desired frequency is used as the figure of merit, which approximately represents the side-mode suppression ratio. In practice, we use tunable optical band-pass and band-stop filters to obtain the power of the desired frequency and the power except of the desired frequency separately. With the assistance of optimization algorithms, such as the particle swarm optimization (PSO) algorithm, we can get stable operation conditions for tunable lasers at designated frequencies directly and efficiently. PMID:27607701

  4. Semiconductor metal oxide compounds based gas sensors: A literature review

    NASA Astrophysics Data System (ADS)

    Patil, Sunil Jagannath; Patil, Arun Vithal; Dighavkar, Chandrakant Govindrao; Thakare, Kashinath Shravan; Borase, Ratan Yadav; Nandre, Sachin Jayaram; Deshpande, Nishad Gopal; Ahire, Rajendra Ramdas

    2015-03-01

    This paper gives a statistical view about important contributions and advances on semiconductor metal oxide (SMO) compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas (LPG), H2S, NH3, CO2, acetone, ethanol, other volatile compounds and hazardous gases. Moreover, it is revealed that the alloy/composite made up of SMO gas sensors show better gas response than their counterpart single component gas sensors, i.e., they are found to enhance the 4S characteristics namely speed, sensitivity, selectivity and stability. Improvement of such types of sensors used for detection of various air pollutants, which are reported in last two decades, is highlighted herein.

  5. Supramolecular Luminescence from Oligofluorenol-Based Supramolecular Polymer Semiconductors

    PubMed Central

    Zhang, Guang-Wei; Wang, Long; Xie, Ling-Hai; Lin, Jin-Yi; Huang, Wei

    2013-01-01

    Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR) and dynamic light scattering (DLS). The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band) at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics. PMID:24232455

  6. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

    PubMed Central

    Gu, Haoshuang; Wang, Zhao; Hu, Yongming

    2012-01-01

    Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors. PMID:22778599

  7. Supramolecular luminescence from oligofluorenol-based supramolecular polymer semiconductors.

    PubMed

    Zhang, Guang-Wei; Wang, Long; Xie, Ling-Hai; Lin, Jin-Yi; Huang, Wei

    2013-11-13

    Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR) and dynamic light scattering (DLS). The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band) at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics.

  8. Terahertz optoelectronic devices based on intersubband transitions in III-nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Sudradjat, Faisal Firmansyah

    The terahertz (THz) spectral region, commonly defined as the frequency (wavelength) range between 0.3 and 10 THz (1 mm and 30 µm) has many important applications in the industrial, biomedical, and military sectors. However, due to a lack of practical semiconductor materials with adequately small bandgap energy, the development of THz light sources and photodetectors has so far been limited. In recent years, devices based on intersubband transitions between discrete energy states in quantum heterostructures have been under intense research and development to address this issue. Of particular promise in the THz range are quantum cascade lasers (QCLs) and quantum well infrared photodetectors (QWIPs), which utilize intersubband transitions in specially designed quantum well (QW) structures to emit light and generate photocurrent, respectively. This research work has focused on the development of THz light sources and photodetectors using intersubband transitions in GaN/AlGaN QWs, whose basic materials properties allow for improved spectral coverage and high-temperature operation compared to existing semiconductor devices. To design the active region of QCLs and QWIPs based on inter-conduction-subband transitions in these materials, the necessary numerical tools have first been developed. Sequential tunneling, the key electronic transport mechanism of intersubband light emitters, has then been demonstrated in GaN/AlGaN QC structures. Furthermore, we have measured promising THz electroluminescence spectra from the same devices through the use of lock-in step-scan Fourier transform infrared spectroscopy. In the area of photodetectors, we have developed a novel double-step QW design in order to overcome the material limitations presented by the intrinsic internal electric fields of GaN/AlGaN QWs. With this design approach, we have experimentally demonstrated the operation of a far infrared QWIP with a peak detection wavelength of 23 µm (13 THz frequency), which is the

  9. EDITORIAL: Challenges for first-principles based properties of defects in semiconductors and oxides Challenges for first-principles based properties of defects in semiconductors and oxides

    NASA Astrophysics Data System (ADS)

    2009-12-01

    First-principles methods based on density functional theory (DFT) have been the mainstay of theoretical studies of the properties of semiconductor and oxide materials. Despite the tremendous successes of the past few decades, significant challenges remain in adapting these methods for predictive simulations that are quantitatively useful in predicting device behavior. Recent advances in computational capabilities, and improved theoretical methods taking advantage of ever more powerful computer hardware, offer the possibility that computational modeling may finally fulfill the long-sought goal of truly predictive simulations for defect properties. The exciting prospect of using modelling as `virtual experiments' to obtain quantitatively accurate predictions of semiconductor behavior seems tantalizingly close, but challenges still remain, which is evident in the many divergent approaches adopted for the modelling and simulation of various aspects of defect behavior. This special issue consists of papers describing different approaches to the study of defects, and the challenges that remain from the perspective of leading scientists in the field. It includes contributions on the theoretical and computational issues of using density functional methods for defect calculations [Nieminen], treatments to account for finite computational cell effects in periodic defect supercell calculations using analytical constructions [Lany and Zunger], or cell-size extrapolation techniques [Castleton et al], or instead using embedded cluster calculations to model charge-trapping defects [Shluger et al]. This issue also includes a description of the computation of g-tensor and hyperfine splitting for defect centers [Valentin and Pacchione], computation of vibrational properties of impurities from dynamical DFT calculations [Estreicher et al], and the use of DFT supercell calculations to predict charge transition energy levels of intrinsic defects in GaAs [Schultz and von Lilienfeld

  10. Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

    SciTech Connect

    Mario Agio

    2002-12-31

    This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser.

  11. Ratiometric fluorescence, electrochemiluminescence, and photoelectrochemical chemo/biosensing based on semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Wu, Peng; Hou, Xiandeng; Xu, Jing-Juan; Chen, Hong-Yuan

    2016-04-01

    Ratiometric fluorescent sensors, which can provide built-in self-calibration for correction of a variety of analyte-independent factors, have attracted particular attention for analytical sensing and optical imaging with the potential to provide a precise and quantitative analysis. A wide variety of ratiometric sensing probes using small fluorescent molecules have been developed. Compared with organic dyes, exploiting semiconductor quantum dots (QDs) in ratiometric fluorescence sensing is even more intriguing, owing to their unique optical and photophysical properties that offer significant advantages over organic dyes. In this review, the main photophysical mechanism for generating dual-emission from QDs for ratiometry is discussed and categorized in detail. Typically, dual-emission can be obtained either with energy transfer from QDs to dyes or with independent dual fluorophores of QDs and dye/QDs. The recent discovery of intrinsic dual-emission from Mn-doped QDs offers new opportunities for ratiometric sensing. Particularly, the signal transduction of QDs is not restricted to fluorescence, and electrochemiluminescence and photoelectrochemistry from QDs are also promising for sensing, which can be made ratiometric for correction of interferences typically encountered in electrochemistry. All these unique photophysical properties of QDs lead to a new avenue of ratiometry, and the recent progress in this area is addressed and summarized here. Several interesting applications of QD-based ratiometry are presented for the determination of metal ions, temperature, and biomolecules, with specific emphasis on the design principles and photophysical mechanisms of these probes.

  12. Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Heng-Yu; Tseng, Chun-Yen

    2015-09-01

    In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occupying a roughly 10% of the device surface region consequently render PDs with a high transmittance in the ultraviolet (UV) wavelength range. The photoresponsivity of MgZnO-based MSM-UV-PDs evaluated at the wavelength of 330 nm with the operating bias voltage of 5 V is elevated from 0.135 to 0.248 A/W when the thin metal electrode is replaced by the nanomesh electrode, and the corresponding quantum efficiency is improved from 50.75 to 93.23%. Finally, adopting the nanomesh electrode also helps to enhance the UV-visible rejection ratio (R330nm/R450nm) and the detectivity from 1663 and 1.78 × 1010 cmHz0.5W-1 to 2480 and 2.43 × 1010 cmHz0.5W-1, respectively.

  13. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    NASA Astrophysics Data System (ADS)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

    2010-06-01

    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  14. A game theoretic framework for incentive-based models of intrinsic motivation in artificial systems.

    PubMed

    Merrick, Kathryn E; Shafi, Kamran

    2013-01-01

    An emerging body of research is focusing on understanding and building artificial systems that can achieve open-ended development influenced by intrinsic motivations. In particular, research in robotics and machine learning is yielding systems and algorithms with increasing capacity for self-directed learning and autonomy. Traditional software architectures and algorithms are being augmented with intrinsic motivations to drive cumulative acquisition of knowledge and skills. Intrinsic motivations have recently been considered in reinforcement learning, active learning and supervised learning settings among others. This paper considers game theory as a novel setting for intrinsic motivation. A game theoretic framework for intrinsic motivation is formulated by introducing the concept of optimally motivating incentive as a lens through which players perceive a game. Transformations of four well-known mixed-motive games are presented to demonstrate the perceived games when players' optimally motivating incentive falls in three cases corresponding to strong power, affiliation and achievement motivation. We use agent-based simulations to demonstrate that players with different optimally motivating incentive act differently as a result of their altered perception of the game. We discuss the implications of these results both for modeling human behavior and for designing artificial agents or robots. PMID:24198797

  15. A game theoretic framework for incentive-based models of intrinsic motivation in artificial systems.

    PubMed

    Merrick, Kathryn E; Shafi, Kamran

    2013-01-01

    An emerging body of research is focusing on understanding and building artificial systems that can achieve open-ended development influenced by intrinsic motivations. In particular, research in robotics and machine learning is yielding systems and algorithms with increasing capacity for self-directed learning and autonomy. Traditional software architectures and algorithms are being augmented with intrinsic motivations to drive cumulative acquisition of knowledge and skills. Intrinsic motivations have recently been considered in reinforcement learning, active learning and supervised learning settings among others. This paper considers game theory as a novel setting for intrinsic motivation. A game theoretic framework for intrinsic motivation is formulated by introducing the concept of optimally motivating incentive as a lens through which players perceive a game. Transformations of four well-known mixed-motive games are presented to demonstrate the perceived games when players' optimally motivating incentive falls in three cases corresponding to strong power, affiliation and achievement motivation. We use agent-based simulations to demonstrate that players with different optimally motivating incentive act differently as a result of their altered perception of the game. We discuss the implications of these results both for modeling human behavior and for designing artificial agents or robots.

  16. Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

    NASA Astrophysics Data System (ADS)

    Fukumura, T.; Yamada, Y.; Toyosaki, H.; Hasegawa, T.; Koinuma, H.; Kawasaki, M.

    2004-02-01

    A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS unidentified ferromagnetic oxide (UFO). Perspectives and possible devices are also given.

  17. Cu2O-based solar cells using oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2016-01-01

    We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0

  18. Stimulating Students' Intrinsic Motivation for Learning Chemistry through the Use of Context-Based Learning Modules

    ERIC Educational Resources Information Center

    Vaino, Katrin; Holbrook, Jack; Rannikmae, Miia

    2012-01-01

    This paper introduces a research project in which five chemistry teachers, working in cooperation with university researchers, implemented a new teaching approach using context-based modules specially designed to stimulate the intrinsic motivation of students. The intention was to induce change in chemistry teachers' teaching approach from more…

  19. Flexible OFDM-based access systems with intrinsic function of chromatic dispersion compensation

    NASA Astrophysics Data System (ADS)

    Konishi, Tsuyoshi; Murakawa, Takuya; Nagashima, Tomotaka; Hasegawa, Makoto; Shimizu, Satoshi; Hattori, Kuninori; Okuno, Masayuki; Mino, Shinji; Himeno, Akira; Uenohara, Hiroyuki; Wada, Naoya; Cincotti, Gabriella

    2015-12-01

    Cost-effective and tunable chromatic dispersion compensation in a fiber link are still an open issue in metro and access networks to cope with increasing costs and power consumption. Intrinsic chromatic dispersion compensation functionality of optical fractional orthogonal frequency division multiplexing is discussed and experimentally demonstrated using dispersion-tunable transmitter and receiver based on wavelength selective switching devices.

  20. Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

    PubMed Central

    Elia, Angela; Lugarà, Pietro Mario; Di Franco, Cinzia; Spagnolo, Vincenzo

    2009-01-01

    The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques. PMID:22303143

  1. Design and simulation of a semiconductor chip-based visible - NIR spectrometer for Earth observation

    NASA Astrophysics Data System (ADS)

    Coote, J.; Woolliams, E.; Fox, N.; Goodyer, I. D.; Sweeney, S. J.

    2014-03-01

    We present the development of a novel semiconductor chip-based spectrometer for calibration of Earth observation instruments. The chip follows the Solo spectroscopy approach utilising an array of microdisk resonators evanescently coupled to a central waveguide. Each resonator is tuned to select out a specific wavelength from the incoming spectrum, and forms a p-i-n junction in which current is generated when light of the correct wavelength is present. In this paper we discuss important design aspects including the choice of semiconductor material, design of semiconductor quantum well structures for optical absorption, and design and optimisation of the waveguide and resonators.

  2. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

    SciTech Connect

    Tanaka, Masaaki; Ohya, Shinobu Nam Hai, Pham

    2014-03-15

    Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

  3. Assessing Online Textual Feedback to Support Student Intrinsic Motivation Using a Collaborative Text-Based Dialogue System: A Qualitative Study

    ERIC Educational Resources Information Center

    Shroff, Ronnie H.; Deneen, Christopher

    2011-01-01

    This paper assesses textual feedback to support student intrinsic motivation using a collaborative text-based dialogue system. A research model is presented based on research into intrinsic motivation, and the specific construct of feedback provides a framework for the model. A qualitative research methodology is used to validate the model.…

  4. Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

  5. High-efficiency photovoltaics based on semiconductor nanostructures

    SciTech Connect

    Yu, Paul K.L.; Yu, Edward T.; Wang, Deli

    2011-10-31

    The objective of this project was to exploit a variety of semiconductor nanostructures, specifically semiconductor quantum wells, quantum dots, and nanowires, to achieve high power conversion efficiency in photovoltaic devices. In a thin-film device geometry, the objectives were to design, fabricate, and characterize quantum-well and quantum-dot solar cells in which scattering from metallic and/or dielectric nanostructures was employed to direct incident photons into lateral, optically confined paths within a thin (~1-3um or less) device structure. Fundamental issues concerning nonequilibrium carrier escape from quantum-confined structures, removal of thin-film devices from an epitaxial growth substrate, and coherent light trapping in thin-film photovoltaic devices were investigated. In a nanowire device geometry, the initial objectives were to engineer vertical nanowire arrays to optimize optical confinement within the nanowires, and to extend this approach to core-shell heterostructures to achieve broadspectrum absorption while maintaining high opencircuit voltages. Subsequent work extended this approach to include fabrication of nanowire photovoltaic structures on low-cost substrates.

  6. Roles of cocatalysts in semiconductor-based photocatalytic hydrogen production.

    PubMed

    Yang, Jinhui; Yan, Hongjian; Zong, Xu; Wen, Fuyu; Liu, Meiying; Li, Can

    2013-08-13

    A photocatalyst is defined as a functional composite material with three components: photo-harvester (e.g. semiconductor), reduction cocatalyst (e.g. for hydrogen evolution) and oxidation cocatalyst (e.g. for oxidation evolution from water). Loading cocatalysts on semiconductors is proved to be an effective approach to promote the charge separation and transfer, suppress the charge recombination and enhance the photocatalytic activity. Furthermore, the photocatalytic performance can be significantly improved by loading dual cocatalysts for reduction and oxidation, which could lower the activation energy barriers, respectively, for the two half reactions. A quantum efficiency (QE) as high as 93 per cent at 420 nm for H₂ production has been achieved for Pt-PdS/CdS, where Pt and PdS, respectively, act as reduction and oxidation cocatalysts and CdS as a photo-harvester. The dual cocatalysts work synergistically and enhance the photocatalytic reaction rate, which is determined by the slower one (either reduction or oxidation). This work demonstrates that the cocatalysts, especially the dual cocatalysts for reduction and oxidation, are crucial and even absolutely necessary for achieving high QEs in photocatalytic hydrogen production, as well as in photocatalytic water splitting. PMID:23816907

  7. Skull base tumours Part II. Central skull base tumours and intrinsic tumours of the bony skull base.

    PubMed

    Borges, Alexandra

    2008-06-01

    With the advances of cross-sectional imaging radiologists gained an increasing responsibility in the management of patients with skull base pathology. As this anatomic area is hidden to clinical exam, surgeons and radiation oncologists have to rely on imaging studies to plan the most adequate treatment. To fulfil these endeavour radiologists need to be knowledgeable about skull base anatomy, about the main treatment options available, their indications and contra-indications and needs to be aware of the wide gamut of pathologies seen in this anatomic region. This article will provide a radiologists' friendly approach to the central skull base and will review the most common central skull base tumours and tumours intrinsic to the bony skull base.

  8. Intrinsic functional connectivity pattern-based brain parcellation using normalized cut

    NASA Astrophysics Data System (ADS)

    Cheng, Hewei; Song, Dandan; Wu, Hong; Fan, Yong

    2012-02-01

    In imaging data based brain network analysis, a necessary precursor for constructing meaningful brain networks is to identify functionally homogeneous regions of interest (ROIs) for defining network nodes. For parcellating the brain based on resting state fMRI data, normalized cut is one widely used clustering algorithm which groups voxels according to the similarity of functional signals. Due to low signal to noise ratio (SNR) of resting state fMRI signals, spatial constraint is often applied to functional similarity measures to generate smooth parcellation. However, improper spatial constraint might alter the intrinsic functional connectivity pattern, thus yielding biased parcellation results. To achieve reliable and least biased parcellation of the brain, we propose an optimization method for the spatial constraint to functional similarity measures in normalized cut based brain parcellation. Particularly, we first identify the space of all possible spatial constraints that are able to generate smooth parcellation, then find the spatial constraint that leads to the brain parcellation least biased from the intrinsic function pattern based parcellation, measured by the minimal Ncut value calculated based on the functional similarity measure of original functional signals. The proposed method has been applied to the parcellation of medial superior frontal cortex for 20 subjects based on their resting state fMRI data. The experiment results indicate that our method can generate meaningful parcellation results, consistent with existing functional anatomy knowledge.

  9. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  10. Novel semiconductor radiation detector based on mercurous halides

    NASA Astrophysics Data System (ADS)

    Chen, Henry; Kim, Joo-Soo; Amarasinghe, Proyanthi; Palosz, Withold; Jin, Feng; Trivedi, Sudhir; Burger, Arnold; Marsh, Jarrod C.; Litz, Marc S.; Wiejewarnasuriya, Priyalal S.; Gupta, Neelam; Jensen, Janet; Jensen, James

    2015-08-01

    The three most important desirable features in the search for room temperature semiconductor detector (RTSD) candidate as an alternative material to current commercially off-the-shelf (COTS) material for gamma and/or thermal neutron detection are: low cost, high performance and long term stability. This is especially important for pager form application in homeland security. Despite years of research, no RTSD candidate so far can satisfy the above 3 features simultaneously. In this work, we show that mercurous halide materials Hg2X2 (X= I, Cl, Br) is a new class of innovative compound semiconductors that is capable of delivering breakthrough advances to COTS radiation detector materials. These materials are much easier to grow thicker and larger volume crystals. They can detect gamma and potentially neutron radiation making it possible to detect two types of radiation with just one crystal material. The materials have wider bandgaps (compared to COTS) meaning higher resistivity and lower leakage current, making this new technology more compatible with available microelectronics. The materials also have higher atomic number and density leading to higher stopping power and better detector sensitivity/efficiency. They are not hazardous so there are no environmental and health concerns during manufacturing and are more stable making them more practical for commercial deployment. Focus will be on Hg2I2. Material characterization and detector performance will be presented and discussed. Initial results show that an energy resolution better than 2% @ 59.6 keV gamma from Am-241 and near 1% @ 662 keV from Cs-137 source can be achieved at room temperature.

  11. Thermodynamic properties of semiconductor compounds studied based on Debye-Waller factors

    NASA Astrophysics Data System (ADS)

    Van Hung, Nguyen; Toan, Nguyen Cong; Ba Duc, Nguyen; Vuong, Dinh Quoc

    2015-08-01

    Thermodynamic properties of semiconductor compounds have been studied based on Debye-Waller factors (DWFs) described by the mean square displacement (MSD) which has close relation with the mean square relative displacement (MSRD). Their analytical expressions have been derived based on the statistical moment method (SMM) and the empirical many-body Stillinger-Weber potentials. Numerical results for the MSDs of GaAs, GaP, InP, InSb, which have zinc-blende structure, are found to be in reasonable agreement with experiment and other theories. This paper shows that an elements value for MSD is dependent on the binary semiconductor compound within which it resides.

  12. Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors

    NASA Astrophysics Data System (ADS)

    Tas, M.; Şaşıoǧlu, E.; Galanakis, I.; Friedrich, C.; Blügel, S.

    2016-05-01

    Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the G W approximation within the framework of the FLAPW method, we study the quasiparticle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the s p -electron based semiconductors such as Si and GaAs, in these systems, the many-body corrections have a minimal effect on the electronic band structure and the energy band gap increases by less than 0.2 eV, which makes the starting point density functional theory (DFT) a good approximation for the description of electronic and optical properties of these materials. Furthermore, the band gap can be tuned either by the variation of the lattice parameter or by the substitution of the s p -chemical element.

  13. Terahertz applications of integrated circuits based on intrinsic Josephson junctions in high Tc superconductors

    NASA Astrophysics Data System (ADS)

    Wang, Huabing; Wu, Peiheng; Yamashita, Tsutomu

    2001-10-01

    Using a newly developed double-side fabrication method, an IJJ stack plus a bow-tie antenna and chokes were integrated in a slice 200 nm thick and singled out from inside a bulk Bi2Sr2CaCu2O8+x (BSCCO) single crystal. The junctions in the fabricated stack were very uniform, and the number of junctions involved was rather controllable. In addition to this method, which can be used to fabricate integrated circuits based on intrinsic Josephson junctions in high temperature (Tc) superconductors, also reported will be terahertz responses of IJJs, and the possible applications in quantum voltage standard, spectroscopy, and so on.

  14. An All Fiber Intrinsic Fabry-Perot Interferometer Based on an Air-Microcavity

    PubMed Central

    Jáuregui-Vázquez, Daniel; Estudillo-Ayala, Julián M.; Rojas-Laguna, Roberto; Vargas-Rodríguez, Everardo; Sierra-Hernández, Juan M.; Hernández-García, Juan C.; Mata-Chávez, Ruth I.

    2013-01-01

    In this work an Intrinsic Fabry-Perot Interferometer (IFPI) based on an air-microcavity is presented. Here the air microcavity, with silica walls, is formed at a segment of a hollow core photonic crystal fiber (HCPCF), which is fusion spliced with a single mode fiber (SMF). Moreover, the spectral response of the IFPI is experimentally characterized and some results are provided. Finally, the viability to use the IFPI to implement a simple, compact size, and low cost refractive index sensor is briefly analyzed. PMID:23673676

  15. An all fiber intrinsic Fabry-Perot Interferometer based on an air-microcavity.

    PubMed

    Jáuregui-Vázquez, Daniel; Estudillo-Ayala, Julián M; Rojas-Laguna, Roberto; Vargas-Rodríguez, Everardo; Sierra-Hernández, Juan M; Hernández-García, Juan C; Mata-Chávez, Ruth I

    2013-01-01

    In this work an Intrinsic Fabry-Perot Interferometer (IFPI) based on an air-microcavity is presented. Here the air microcavity, with silica walls, is formed at a segment of a hollow core photonic crystal fiber (HCPCF), which is fusion spliced with a single mode fiber (SMF). Moreover, the spectral response of the IFPI is experimentally characterized and some results are provided. Finally, the viability to use the IFPI to implement a simple, compact size, and low cost refractive index sensor is briefly analyzed. PMID:23673676

  16. Shared Reading: assessing the intrinsic value of a literature-based health intervention.

    PubMed

    Longden, Eleanor; Davis, Philip; Billington, Josie; Lampropoulou, Sofia; Farrington, Grace; Magee, Fiona; Walsh, Erin; Corcoran, Rhiannon

    2015-12-01

    Public health strategies have placed increasing emphasis on psychosocial and arts-based strategies for promoting well-being. This study presents preliminary findings for a specific literary-based intervention, Shared Reading, which provides community-based spaces in which individuals can relate with both literature and one another. A 12-week crossover design was conducted with 16 participants to compare benefits associated with six sessions of Shared Reading versus a comparison social activity, Built Environment workshops. Data collected included quantitative self-report measures of psychological well-being, as well as transcript analysis of session recordings and individual video-assisted interviews. Qualitative findings indicated five intrinsic benefits associated with Shared Reading: liveness, creative inarticulacy, the emotional, the personal and the group (or collective identity construction). Quantitative data additionally showed that the intervention is associated with enhancement of a sense of 'Purpose in Life'. Limitations of the study included the small sample size and ceiling effects created by generally high levels of psychological well-being at baseline. The therapeutic potential of reading groups is discussed, including the distinction between instrumental and intrinsic value within arts-and-health interventions.

  17. Shared Reading: assessing the intrinsic value of a literature-based health intervention.

    PubMed

    Longden, Eleanor; Davis, Philip; Billington, Josie; Lampropoulou, Sofia; Farrington, Grace; Magee, Fiona; Walsh, Erin; Corcoran, Rhiannon

    2015-12-01

    Public health strategies have placed increasing emphasis on psychosocial and arts-based strategies for promoting well-being. This study presents preliminary findings for a specific literary-based intervention, Shared Reading, which provides community-based spaces in which individuals can relate with both literature and one another. A 12-week crossover design was conducted with 16 participants to compare benefits associated with six sessions of Shared Reading versus a comparison social activity, Built Environment workshops. Data collected included quantitative self-report measures of psychological well-being, as well as transcript analysis of session recordings and individual video-assisted interviews. Qualitative findings indicated five intrinsic benefits associated with Shared Reading: liveness, creative inarticulacy, the emotional, the personal and the group (or collective identity construction). Quantitative data additionally showed that the intervention is associated with enhancement of a sense of 'Purpose in Life'. Limitations of the study included the small sample size and ceiling effects created by generally high levels of psychological well-being at baseline. The therapeutic potential of reading groups is discussed, including the distinction between instrumental and intrinsic value within arts-and-health interventions. PMID:26070845

  18. Organic semiconductor nickel phthalocyanine-based photocapacitive and photoresistive detector

    NASA Astrophysics Data System (ADS)

    Shah, Mutabar; Karimov, Kh S.; Sayyad, M. H.

    2010-07-01

    In this study, the photosensitive organic semiconductor nickel phthalocyanine (NiPc) is investigated as a photocapacitive and photoresistive detector. NiPc thin film is grown by vacuum thermal evaporation on an indium tin oxide (ITO)-coated glass substrate. Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is deposited as a top electrode by drop-casting to fabricate the ITO/NiPc/PEDOT:PSS light detector. It has been observed that under the unmodulated filament lamp illumination of up to 9720 lux the capacitance of the detectors increased up to 21, 18 and 4% at a frequency of measuring voltage of 120 Hz, 1 kHz and 10 kHz, respectively, under dark conditions. The change in resistance with the variation in the intensity of light is also investigated. The capacitance and resistance of the light detector decrease with an increase in the frequency. It is assumed that the photocapacitive and photoresistive response of the detector is associated with polarization occurring due to the transfer of photo-generated electrons and holes. The calculated results are in reasonable agreement with the experimental results.

  19. Organic Semiconductors based on Dyes and Color Pigments.

    PubMed

    Gsänger, Marcel; Bialas, David; Huang, Lizhen; Stolte, Matthias; Würthner, Frank

    2016-05-01

    Organic dyes and pigments constitute a large class of industrial products. The utilization of these compounds in the field of organic electronics is reviewed with particular emphasis on organic field-effect transistors. It is shown that for most major classes of industrial dyes and pigments, i.e., phthalocyanines, perylene and naphthalene diimides, diketopyrrolopyrroles, indigos and isoindigos, squaraines, and merocyanines, charge-carrier mobilities exceeding 1 cm(2) V(-1) s(-1) have been achieved. The most widely investigated molecules due to their n-channel operation are perylene and naphthalene diimides, for which even values close to 10 cm(2) V(-1) s(-1) have been demonstrated. The fact that all of these π-conjugated colorants contain polar substituents leading to strongly quadrupolar or even dipolar molecules suggests that indeed a much larger structural space shows promise for the design of organic semiconductor molecules than was considered in this field traditionally. In particular, because many of these dye and pigment chromophores demonstrate excellent thermal and (photo-)chemical stability in their original applications in dyeing and printing, and are accessible by straightforward synthetic protocols, they bear a particularly high potential for commercial applications in the area of organic electronics.

  20. Organic Semiconductors based on Dyes and Color Pigments.

    PubMed

    Gsänger, Marcel; Bialas, David; Huang, Lizhen; Stolte, Matthias; Würthner, Frank

    2016-05-01

    Organic dyes and pigments constitute a large class of industrial products. The utilization of these compounds in the field of organic electronics is reviewed with particular emphasis on organic field-effect transistors. It is shown that for most major classes of industrial dyes and pigments, i.e., phthalocyanines, perylene and naphthalene diimides, diketopyrrolopyrroles, indigos and isoindigos, squaraines, and merocyanines, charge-carrier mobilities exceeding 1 cm(2) V(-1) s(-1) have been achieved. The most widely investigated molecules due to their n-channel operation are perylene and naphthalene diimides, for which even values close to 10 cm(2) V(-1) s(-1) have been demonstrated. The fact that all of these π-conjugated colorants contain polar substituents leading to strongly quadrupolar or even dipolar molecules suggests that indeed a much larger structural space shows promise for the design of organic semiconductor molecules than was considered in this field traditionally. In particular, because many of these dye and pigment chromophores demonstrate excellent thermal and (photo-)chemical stability in their original applications in dyeing and printing, and are accessible by straightforward synthetic protocols, they bear a particularly high potential for commercial applications in the area of organic electronics. PMID:27028553

  1. Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

    SciTech Connect

    GopiReddy, Lakshmi Reddy; Tolbert, Leon M.; Ozpineci, Burak; Pinto, Joao O. P.

    2015-07-15

    Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.

  2. Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    SciTech Connect

    Yang, Ping-Fan; Guo, Yong; Zhu, Rui

    2015-07-15

    We propose a spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. We find that the periodic DMS/NB superlattices can achieve 100% spin filtering over a dramatically broader range of incident energies than the diluted-magnetic-semiconductor/semiconductor (DMS/S) case studied previously. And the positions and widths of spin-filtering bands can be manipulated effectively by adjusting the geometric parameters of the system or the strength of external magnetic field. Such a compelling filtering feature stems from the introduction of nonmagnetic barrier and the spin-dependent giant Zeeman effect induced by the external magnetic field. We also find that the external electric field can exert a significant influence on the spin-polarized transport through the DMS/NB superlattices.

  3. Religion-based emotional social support mediates the relationship between intrinsic religiosity and mental health.

    PubMed

    Hovey, Joseph D; Hurtado, Gabriela; Morales, Lori R A; Seligman, Laura D

    2014-01-01

    Although previous research suggests that increased religiosity is associated with better mental health and many authors have conjectured that religion-based social support may help explain this connection, scant research has directly examined whether religion-based support mediates religiosity and mental health. The present study examined whether various dimensions of religion-based support (social interaction, instrumental, and emotional) mediated the relationship between religiosity and mental health in college students in the Midwest United States. As expected, of the support dimensions, perceived emotional support was the strongest predictor of decreased hopelessness, depression, and suicide behaviors; and the relationships among intrinsic religiosity and the mental health variables were fully mediated by emotional support. These findings provide strong support to the notion that the relationship between religiosity and mental health can be reduced to mediators such as social support. Research and theoretical implications are discussed.

  4. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    DOEpatents

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  5. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  6. Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

    PubMed

    Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

    2009-04-01

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  7. Intrinsic signatures of polymer based fiber reinforced composite structures: An ultrasonic approach

    SciTech Connect

    Good, M.S.; Hansen, N.H.; Heasler, P.G.; Undem, H.A.; Fuller, J.L.; Skorpik, J.R.

    1993-09-01

    Combination of ultrasound, image comparison, and statistical analysis provide a method for acquiring a subsurface, intrinsic signature from polymer based, fiber-reinforced composites. Although materials properties are carefully controlled, localized fluctuations in the macrostructure and microstructure permit a basis for ultrasound and other NDE methods to read intrinsic signatures from a material. Under ideal conditions where a material signature is stable and has sufficient spatial features as a signature, an error rate on the order of one-out-of-a-million is feasible. A conclusion of an independent functional test performed on the laboratory prototype as it existed in June 1991 is that the system proved effective as a proof-of-concept system. An issue raised by the independent evaluation is that system performance is still at risk of factors relating to signature stability, particularly moisture absorption and material creep. System improvements made to mitigate noise sources identified by the independent evaluation include (1) implementation of a 3.0 {minus} 4.5 {mu}S software gate, (2) use of a RMS amplitude instead of the gated peak amplitude, and (3) optional use of a suction cup holder to facilitate reader alignment and scan consistency.

  8. Photothermoelectric p-n junction photodetector with intrinsic broadband polarimetry based on macroscopic carbon nanotube films.

    PubMed

    He, Xiaowei; Wang, Xuan; Nanot, Sébastien; Cong, Kankan; Jiang, Qijia; Kane, Alexander A; Goldsmith, John E M; Hauge, Robert H; Léonard, François; Kono, Junichiro

    2013-08-27

    Light polarization is used in the animal kingdom for communication, navigation, and enhanced scene interpretation and also plays an important role in astronomy, remote sensing, and military applications. To date, there have been few photodetector materials demonstrated to have direct polarization sensitivity, as is usually the case in nature. Here, we report the realization of a carbon-based broadband photodetector, where the polarimetry is intrinsic to the active photodetector material. The detector is based on p-n junctions formed between two macroscopic films of single-wall carbon nanotubes. A responsivity up to ~1 V/W was observed in these devices, with a broadband spectral response spanning the visible to the mid-infrared. This responsivity is about 35 times larger than previous devices without p-n junctions. A combination of experiment and theory is used to demonstrate the photothermoelectric origin of the responsivity and to discuss the performance attributes of such devices.

  9. Intrinsic interference mitigating coordinated beamforming for the FBMC/OQAM based downlink

    NASA Astrophysics Data System (ADS)

    Cheng, Yao; Li, Peng; Haardt, Martin

    2014-12-01

    In this work, we propose intrinsic interference mitigating coordinated beamforming (IIM-CBF)-based transmission strategies for the downlink of multi-user multiple-input-multiple-out (MIMO) systems and coordinated multi-point (CoMP) systems where filter bank based multi-carrier with offset quadrature amplitude modulation (FBMC/OQAM) is employed. Our goal is to alleviate the dimensionality constraint imposed on the state-of-the-art solutions for FBMC/OQAM-based space division multiple access that the total number of receive antennas of the users must not exceed the number of transmit antennas at the base station. First, two IIM-CBF algorithms are developed for a single-cell multi-user MIMO downlink system. The central idea is to jointly and iteratively calculate the precoding matrix and decoding matrix for each subcarrier to mitigate the multi-user interference as well as the intrinsic interference inherent in FBMC/OQAM-based systems. Second, for a CoMP downlink scenario where partial coordination among the base stations is considered, the application of coordinated beamforming-based transmission schemes is further investigated. An appropriate IIM-CBF technique is proposed. Simulation results show that when the number of transmit antennas at the base station is equal to the total number of receive antennas of the users, the proposed IIM-CBF algorithm outperforms the existing transmission strategies for FBMC/OQAM-based multi-user MIMO downlink systems. Moreover, we evaluate the performances of the IIM-CBF schemes in the downlink of multi-user MIMO systems and CoMP systems where the total number of receive antennas of users exceeds the number of transmit antennas at the base station. It is observed that by employing the IIM-CBF techniques, FBMC/OQAM systems achieve a similar bit error rate (BER) performance as its orthogonal frequency division multiplexing with the cyclic prefix insertion (CP-OFDM)-based counterpart while exhibiting superiority in terms of a higher

  10. SEMICONDUCTOR DEVICES: Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region

    NASA Astrophysics Data System (ADS)

    Jin, He; Rui, Zheng; Lining, Zhang; Jian, Zhang; Xinnan, Lin; Mansun, Chan

    2010-06-01

    A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate (SRG) MOSFET from the accumulation to strong inversion region. The original equation is derived from the exact solution of a simplified Poisson equation and then the empirical correction is performed from the mathematical condition required by the continuity of the solution, which results in a continuous surface potential versus voltage equation, allowing the surface potential and the related derivatives to be described by an analytic solution from the accumulation to strong inversion region and from linear to the saturation region accurately and continuously. From these results, the dependences of surface potential and centric potential characteristics on device geometry are analyzed and the results are also verified with the 3-D numerical simulation from the aspect of accuracy and continuity tests.

  11. Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Wei, Kang Liang; Liu, Xiao Yan; Du, Gang

    2013-04-01

    Using full three-dimensional (3D) technology computer-aided design (TCAD) simulations, we present a comprehensive statistical study on the random discrete dopant (RDD) induced variability in state-of-the-art intrinsic channel trigate MOSFETs. This paper is focused on the RDD variability sources that are introduced by dopant diffusion from highly doped source/drain (S/D) regions into the undoped channel region, which is referred to as junction nonabruptness (JNA). By considering a realistic lateral doping profile in the channel and evaluating the impact of JNA on the variability of performance parameters such as threshold voltage (Vth), subthreshold slope (SS), drain-induced barrier lowering (DIBL), on current (Ion), and off current (Ioff), we show that the effect of JNA can lead to substantial device variations. The nonnegligible influence of JNA puts limitations on device scaling, which is also investigated in this paper.

  12. Cryptography based on the absorption/emission features of multicolor semiconductor nanocrystal quantum dots.

    PubMed

    Zhou, Ming; Chang, Shoude; Grover, Chander

    2004-06-28

    Further to the optical coding based on fluorescent semiconductor quantum dots (QDs), a concept of using mixtures of multiple single-color QDs for creating highly secret cryptograms based on their absorption/emission properties was demonstrated. The key to readout of the optical codes is a group of excitation lights with the predetermined wavelengths programmed in a secret manner. The cryptograms can be printed on the surfaces of different objects such as valuable documents for security purposes.

  13. Computational design of intrinsic molecular rectifiers based on asymmetric functionalization of N-phenylbenzamide

    SciTech Connect

    Ding, Wendu; Koepf, Matthieu; Koenigsmann, Christopher; Batra, Arunabh; Venkataraman, Latha; Negre, Christian F. A.; Brudvig, Gary W.; Crabtree, Robert H.; Schmuttenmaer, Charles A.; Batista, Victor S.

    2015-12-08

    Here, we report a systematic computational search of molecular frameworks for intrinsic rectification of electron transport. The screening of molecular rectifiers includes 52 molecules and conformers spanning over 9 series of structural motifs. N-Phenylbenzamide is found to be a promising framework with both suitable conductance and rectification properties. A targeted screening performed on 30 additional derivatives and conformers of N-phenylbenzamide yielded enhanced rectification based on asymmetric functionalization. We demonstrate that electron-donating substituent groups that maintain an asymmetric distribution of charge in the dominant transport channel (e.g., HOMO) enhance rectification by raising the channel closer to the Fermi level. These findings are particularly valuable for the design of molecular assemblies that could ensure directionality of electron transport in a wide range of applications, from molecular electronics to catalytic reactions.

  14. Computational design of intrinsic molecular rectifiers based on asymmetric functionalization of N-phenylbenzamide

    DOE PAGES

    Ding, Wendu; Koepf, Matthieu; Koenigsmann, Christopher; Batra, Arunabh; Venkataraman, Latha; Negre, Christian F. A.; Brudvig, Gary W.; Crabtree, Robert H.; Schmuttenmaer, Charles A.; Batista, Victor S.

    2015-11-03

    Here, we report a systematic computational search of molecular frameworks for intrinsic rectification of electron transport. The screening of molecular rectifiers includes 52 molecules and conformers spanning over 9 series of structural motifs. N-Phenylbenzamide is found to be a promising framework with both suitable conductance and rectification properties. A targeted screening performed on 30 additional derivatives and conformers of N-phenylbenzamide yielded enhanced rectification based on asymmetric functionalization. We demonstrate that electron-donating substituent groups that maintain an asymmetric distribution of charge in the dominant transport channel (e.g., HOMO) enhance rectification by raising the channel closer to the Fermi level. These findingsmore » are particularly valuable for the design of molecular assemblies that could ensure directionality of electron transport in a wide range of applications, from molecular electronics to catalytic reactions.« less

  15. Computational design of intrinsic molecular rectifiers based on asymmetric functionalization of N-phenylbenzamide

    SciTech Connect

    Ding, Wendu; Koepf, Matthieu; Koenigsmann, Christopher; Batra, Arunabh; Venkataraman, Latha; Negre, Christian F. A.; Brudvig, Gary W.; Crabtree, Robert H.; Schmuttenmaer, Charles A.; Batista, Victor S.

    2015-11-03

    Here, we report a systematic computational search of molecular frameworks for intrinsic rectification of electron transport. The screening of molecular rectifiers includes 52 molecules and conformers spanning over 9 series of structural motifs. N-Phenylbenzamide is found to be a promising framework with both suitable conductance and rectification properties. A targeted screening performed on 30 additional derivatives and conformers of N-phenylbenzamide yielded enhanced rectification based on asymmetric functionalization. We demonstrate that electron-donating substituent groups that maintain an asymmetric distribution of charge in the dominant transport channel (e.g., HOMO) enhance rectification by raising the channel closer to the Fermi level. These findings are particularly valuable for the design of molecular assemblies that could ensure directionality of electron transport in a wide range of applications, from molecular electronics to catalytic reactions.

  16. Intrinsically tunable bulk acoustic wave resonators based on sol-gel grown PMN-PT films

    NASA Astrophysics Data System (ADS)

    Vorobiev, A.; Spreitzer, M.; Veber, A.; Suvorov, D.; Gevorgian, S.

    2014-08-01

    Intrinsically tunable bulk acoustic wave resonators, based on sol-gel 0.70Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 (PMN-PT) thin films, with high effective electromechanical coupling coefficient of 13% and tunability of the series resonance frequency up to 4.0% are fabricated and characterized. The enhanced electroacoustic properties of the PMN-PT resonators are attributed to the mechanism of polarization rotation occurring in the region of the morphotropic phase boundary. Electroacoustic performance of the PMN-PT resonators is analyzed using the theory of dc field-induced piezoelectric effect in ferroelectrics. Extrinsic acoustic loss in the PMN-PT resonators is analyzed using the model of the wave scattering at reflections from rough interfaces. Mechanical Q-factor of the resonators is up to 70 at 4.1 GHz and limited mainly by losses in the PMN-PT film.

  17. Computational Design of Intrinsic Molecular Rectifiers Based on Asymmetric Functionalization of N-Phenylbenzamide.

    PubMed

    Ding, Wendu; Koepf, Matthieu; Koenigsmann, Christopher; Batra, Arunabh; Venkataraman, Latha; Negre, Christian F A; Brudvig, Gary W; Crabtree, Robert H; Schmuttenmaer, Charles A; Batista, Victor S

    2015-12-01

    We report a systematic computational search of molecular frameworks for intrinsic rectification of electron transport. The screening of molecular rectifiers includes 52 molecules and conformers spanning over 9 series of structural motifs. N-Phenylbenzamide is found to be a promising framework with both suitable conductance and rectification properties. A targeted screening performed on 30 additional derivatives and conformers of N-phenylbenzamide yielded enhanced rectification based on asymmetric functionalization. We demonstrate that electron-donating substituent groups that maintain an asymmetric distribution of charge in the dominant transport channel (e.g., HOMO) enhance rectification by raising the channel closer to the Fermi level. These findings are particularly valuable for the design of molecular assemblies that could ensure directionality of electron transport in a wide range of applications, from molecular electronics to catalytic reactions.

  18. Fast optical recording media based on semiconductor nanostructures for image recording and processing

    SciTech Connect

    Kasherininov, P. G. Tomasov, A. A.

    2008-11-15

    Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10{sup 6} cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10{sup -2}V/cm{sup 2}, and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

  19. Hybrid Solar Cells with Prescribed Nanoscale Morphologies Based onHyperbranched Semiconductor Nanocrystals

    SciTech Connect

    Gur, Ilan; Fromer, Neil A.; Chen, Chih-Ping; Kanaras, AntoniosG.; Alivisatos, A. Paul

    2006-09-09

    In recent years, the search to develop large-area solar cells at low cost has led to research on photovoltaic (PV) systems based on nanocomposites containing conjugated polymers. These composite films can be synthesized and processed at lower costs and with greater versatility than the solid state inorganic semiconductors that comprise today's solar cells. However, the best nanocomposite solar cells are based on a complex architecture, consisting of a fine blend of interpenetrating and percolating donor and acceptor materials. Cell performance is strongly dependent on blend morphology, and solution-based fabrication techniques often result in uncontrolled and irreproducible blends, whose composite morphologies are difficult to characterize accurately. Here we incorporate 3-dimensional hyper-branched colloidal semiconductor nanocrystals in solution-processed hybrid organic-inorganic solar cells, yielding reproducible and controlled nanoscale morphology.

  20. Electronic Biosensors Based on III-Nitride Semiconductors

    NASA Astrophysics Data System (ADS)

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-07-01

    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  1. Electronic Biosensors Based on III-Nitride Semiconductors.

    PubMed

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-01-01

    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  2. Physically-Based Assessment of Intrinsic Groundwater Resource Vulnerability in AN Urban Catchment

    NASA Astrophysics Data System (ADS)

    Graf, T.; Therrien, R.; Lemieux, J.; Molson, J. W.

    2013-12-01

    Several methods exist to assess intrinsic groundwater (re)source vulnerability for the purpose of sustainable groundwater management and protection. However, several methods are empirical and limited in their application to specific types of hydrogeological systems. Recent studies suggest that a physically-based approach could be better suited to provide a general, conceptual and operational basis for groundwater vulnerability assessment. A novel method for physically-based assessment of intrinsic aquifer vulnerability is currently under development and tested to explore the potential of an integrated modelling approach, combining groundwater travel time probability and future scenario modelling in conjunction with the fully integrated HydroGeoSphere model. To determine the intrinsic groundwater resource vulnerability, a fully coupled 2D surface water and 3D variably-saturated groundwater flow model in conjunction with a 3D geological model (GoCAD) has been developed for a case study of the Rivière Saint-Charles (Québec/Canada) regional scale, urban watershed. The model has been calibrated under transient flow conditions for the hydrogeological, variably-saturated subsurface system, coupled with the overland flow zone by taking into account monthly recharge variation and evapotranspiration. To better determine the intrinsic groundwater vulnerability, two independent approaches are considered and subsequently combined in a simple, holistic multi-criteria-decision analyse. Most data for the model comes from an extensive hydrogeological database for the watershed, whereas data gaps have been complemented via field tests and literature review. The subsurface is composed of nine hydrofacies, ranging from unconsolidated fluvioglacial sediments to low permeability bedrock. The overland flow zone is divided into five major zones (Urban, Rural, Forest, River and Lake) to simulate the differences in landuse, whereas the unsaturated zone is represented via the model

  3. Printable Ultrathin Metal Oxide Semiconductor-Based Conformal Biosensors.

    PubMed

    Rim, You Seung; Bae, Sang-Hoon; Chen, Huajun; Yang, Jonathan L; Kim, Jaemyung; Andrews, Anne M; Weiss, Paul S; Yang, Yang; Tseng, Hsian-Rong

    2015-12-22

    Conformal bioelectronics enable wearable, noninvasive, and health-monitoring platforms. We demonstrate a simple and straightforward method for producing thin, sensitive In2O3-based conformal biosensors based on field-effect transistors using facile solution-based processing. One-step coating via aqueous In2O3 solution resulted in ultrathin (3.5 nm), high-density, uniform films over large areas. Conformal In2O3-based biosensors on ultrathin polyimide films displayed good device performance, low mechanical stress, and highly conformal contact determined using polydimethylsiloxane artificial skin having complex curvilinear surfaces or an artificial eye. Immobilized In2O3 field-effect transistors with self-assembled monolayers of NH2-terminated silanes functioned as pH sensors. Functionalization with glucose oxidase enabled d-glucose detection at physiologically relevant levels. The conformal ultrathin field-effect transistor biosensors developed here offer new opportunities for future wearable human technologies. PMID:26498319

  4. Printable Ultrathin Metal Oxide Semiconductor-Based Conformal Biosensors.

    PubMed

    Rim, You Seung; Bae, Sang-Hoon; Chen, Huajun; Yang, Jonathan L; Kim, Jaemyung; Andrews, Anne M; Weiss, Paul S; Yang, Yang; Tseng, Hsian-Rong

    2015-12-22

    Conformal bioelectronics enable wearable, noninvasive, and health-monitoring platforms. We demonstrate a simple and straightforward method for producing thin, sensitive In2O3-based conformal biosensors based on field-effect transistors using facile solution-based processing. One-step coating via aqueous In2O3 solution resulted in ultrathin (3.5 nm), high-density, uniform films over large areas. Conformal In2O3-based biosensors on ultrathin polyimide films displayed good device performance, low mechanical stress, and highly conformal contact determined using polydimethylsiloxane artificial skin having complex curvilinear surfaces or an artificial eye. Immobilized In2O3 field-effect transistors with self-assembled monolayers of NH2-terminated silanes functioned as pH sensors. Functionalization with glucose oxidase enabled d-glucose detection at physiologically relevant levels. The conformal ultrathin field-effect transistor biosensors developed here offer new opportunities for future wearable human technologies.

  5. Advances in graphene-based semiconductor photocatalysts for solar energy conversion: fundamentals and materials engineering.

    PubMed

    Xie, Xiuqiang; Kretschmer, Katja; Wang, Guoxiu

    2015-08-28

    Graphene-based semiconductor photocatalysis has been regarded as a promising technology for solar energy storage and conversion. In this review, we summarized recent developments of graphene-based photocatalysts, including preparation of graphene-based photocatalysts, typical key advances in the understanding of graphene functions for photocatalytic activity enhancement and methodologies to regulate the electron transfer efficiency in graphene-based composite photocatalysts, by which we hope to offer enriched information to harvest the utmost fascinating properties of graphene as a platform to construct efficient graphene-based composite photocatalysts for solar-to-energy conversion.

  6. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times. PMID:27524362

  7. Retinal Stimulation on Rabbit Using Complementary Metal Oxide Semiconductor Based Multichip Flexible Stimulator toward Retinal Prosthesis

    NASA Astrophysics Data System (ADS)

    Tokuda, Takashi; Asano, Ryosuke; Sugitani, Sachie; Taniyama, Mari; Terasawa, Yasuo; Nunoshita, Masahiro; Nakauchi, Kazuaki; Fujikado, Takashi; Tano, Yasuo; Ohta, Jun

    2008-04-01

    The Functionality of a complementary metal oxide semiconductor (CMOS) LSI-based, multichip flexible retinal stimulator was demonstrated in retinal stimulation experiments on rabbits. A 1×4-configured multichip stimulator was fabricated for application to experiments on animals. An experimental procedure including surgical operations was developed, and retinal stimulation was performed with the fabricated multichip stimulator. Neural responses on the visual cortex were successfully evoked by the fabricated stimulator. The stimulator is confirmed to be applicable to acute animal experiments.

  8. Mueller based scatterometry and optical characterization of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Muthinti, Gangadhara Raja

    Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) and the detailed topography of periodic structures found in microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI) based scatterometry are the most widely used optical methodologies for metrology of these structures. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Dimensional metrology using full Mueller Matrix (16 element) scatterometry in the wavelength range of 245nm-1000nm was discussed in this work. Unlike SE and NI, MM data provides complete information about the optical reflection and transmission of polarized light reflected from a sample. MM is a 4x4 transformation matrix (16 elements) describing the change in the intensities of incident polarized light expressed by means of a Stokes Vector. The symmetry properties associated with MM provide an excellent means of measuring and understanding the topography of the periodic nanostructures. Topography here refers to uniformity of the periodic order of arrayed structure. The advantage of MMS over traditional SE Scatterometry is the ability of MMS to measure samples that have anisotropic optical properties and depolarize light. The present work focuses on understanding the Mueller based Scatterometry with respect to other methodologies by a systematic approach. Several laterally complex nano-scale structures with dimensions in the order of nanometers were designed and fabricated using e-beam lithography. Also Mueller based analysis was used to extract profile information and anisotropy coefficients of complex 3D FinFET, SOI fin grating structures. Later, Spectroscopic Mueller matrix (all 16 elements) and SE data were collected in planar diffraction mode for the samples using a J.A. Woollam RC2(TM) Spectroscopic Ellipsometer. Nano

  9. UXO detection and identification based on intrinsic target polarizabilities: A case history

    SciTech Connect

    Gasperikova, E.; Smith, J.T.; Morrison, H.F.; Becker, A.; Kappler, K.

    2008-07-15

    Electromagnetic induction data parameterized in time dependent object intrinsic polarizabilities allow discrimination of unexploded ordnance (UXO) from false targets (scrap metal). Data from a cart-mounted system designed for discrimination of UXO with 20 mm to 155 mm diameters are used. Discrimination of UXO from irregular scrap metal is based on the principal dipole polarizabilities of a target. A near-intact UXO displays a single major polarizability coincident with the long axis of the object and two equal smaller transverse polarizabilities, whereas metal scraps have distinct polarizability signatures that rarely mimic those of elongated symmetric bodies. Based on a training data set of known targets, object identification was made by estimating the probability that an object is a single UXO. Our test survey took place on a military base where both 4.2-inch mortar shells and scrap metal were present. The results show that we detected and discriminated correctly all 4.2-inch mortars, and in that process we added 7%, and 17%, respectively, of dry holes (digging scrap) to the total number of excavations in two different survey modes. We also demonstrated a mode of operation that might be more cost effective than the current practice.

  10. Semiconductor defect metrology using laser-based quantitative phase imaging

    NASA Astrophysics Data System (ADS)

    Zhou, Renjie; Edwards, Chris; Popescu, Gabriel; Goddard, Lynford

    2015-03-01

    A highly sensitive laser-based quantitative phase imaging tool, using an epi-illumination diffraction phase microscope, has been developed for silicon wafer defect inspection. The first system used a 532 nm solid-state laser and detected 20 nm by 100 nm by 110 nm defects in a 22 nm node patterned silicon wafer. The second system, using a 405 nm diode laser, is more sensitive and has enabled detection of 15 nm by 90 nm by 35 nm defects in a 9 nm node densely patterned silicon wafer. In addition to imaging, wafer scanning and image-post processing are also crucial for defect detection.

  11. A Semiconductor-Based Positron Emission Tomography System

    NASA Astrophysics Data System (ADS)

    Oxley, D. C.; Boston, A. J.; Boston, H. C.; Cresswell, J. R.; Grint, A. N.; Harkness, L. J.; Jones, M.; Judson, D. S.; Nolan, P. J.; Slee, M.; Unsworth, C.; Lazarus, I. H.

    2009-12-01

    This paper shall summarize the research conducted employing the high-purity germanium based small animal imaging system, SmartPET (SMall Animal Reconstructive Tomograph for Positron Emission Tomography). Geant4 simulations of the experimental setup were carried out in order to derive novel analysis procedures and quantify the system limitations. In this paper, we will focus on a gamma ray tracking approach devised to overcome germanium's high Compton scattering cross-section and on imaging challenging and complex phantom geometries. The potential of the developed tools and of the system itself will be discussed.

  12. Silicon-based semimetals and semiconductors for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Sun, Hui

    The direct conversion between heat and electricity can be achieved by thermoelectric devices. Thus, thermoelectricity is considered as not only an environmentally friendly substitute for compressor-based refrigerators but also a promising energy solution to harvest waste heat. State-of-the-art thermoelectric materials are often comprised of expensive tellurium or germanium elements and hence are hardly suitable for mass production. The silicon-based thermoelectrics, e.g. semimetallic CoSi and semiconducting beta -FeSi2 materials we study here, are composed of abundant elements in nature. They are also chemically stable, non-toxic, and mechanically robust. Despite the above benefits, they exhibit relatively lower efficiencies compared to state-of-the-art materials. In this dissertation, we have intended to understand the thermal and electrical transport in these materials and enhance their thermoelectric performance. CoSi possesses one of the highest power factors among thermoelectrics due to the sharp features around the Fermi level in its electronic density of states. In order to improve the performance, the effects of p-type dopants, isoelectronic substitutions, n-type dopants, and double doping were systematically studied for arc-melted CoSi samples. The results show that p-type dopants like iron and gallium and n-type dopants like nickel and palladium deteriorate the electrical properties due to the introduction of excess holes and electrons, respectively. Boron and platinum have very limited solubility in CoSi and the segregated impurity phases at grain boundaries are helpful to improve the electrical properties. The isoelectronic substitutions influence the power factor slightly; however, they result in a drastic decrease in the lattice thermal conductivity and hence an enhancement in the figure of merit. In addition, CoSi samples prepared by powder processing were investigated to further reduce the lattice thermal conductivity. Unfortunately, all the

  13. ZnCdMgSe-Based Semiconductors for Intersubband Devices

    SciTech Connect

    Tamargo, Maria C.

    2008-11-13

    This paper presents a review of recent results on the application of ZnCdMgSe-based wide bandgap II-VI compounds to intersubband devices such as quantum cascade lasers and quantum well infrared photodetectors operating in the mid-infrared region. The conduction band offset of ZnCdSe/ZnCdMgSe quantum well structures was determined from contactless electroreflectance measurements to be as high as 1.12 eV. FT-IR was used to measure intersubband absorption in multi-quantum well structures in the mid-IR range. Electroluminescence at 4.8 {mu}m was observed from a quantum cascade emitter structure made from these materials. Preliminary results are also presented on self assembled quantum dots of CdSe on ZnCdMgSe, and novel quantum well structures with metastable binary MgSe barriers.

  14. Graphene-based half-metal and spin-semiconductor for spintronic applications

    NASA Astrophysics Data System (ADS)

    Qi, Jingshan; Chen, Xiaofang; Hu, Kaige; Feng, Ji

    2016-03-01

    In this letter we propose a strategy to make graphene become a half-metal or spin-semiconductor by combining the magnetic proximity effects and sublattice symmetry breaking in graphone/graphene and graphone/graphene/BN heterostructures. Exchange interactions lift the spin degeneracy and sublattice symmetry breaking opens a band gap in graphene. More interestingly, the gap opening depends on the spin direction and the competition between the sublattice asymmetry and exchange field determines the system is a half-metal or a spin-semiconductor. By first-principles calculations and a low-energy effective model analysis, we elucidate the underlying physical mechanism of spin-dependent gap opening and spin degeneracy splitting. This offers an alternative practical platform for graphene-based spintronics.

  15. Anisotropy of the electron g factor in quantum wells based on cubic semiconductors

    SciTech Connect

    Alekseev, P. S.

    2013-09-15

    A new mechanism for the spin splitting of electron levels in asymmetric quantum wells based on GaAs-type semiconductors relative to rotations of the magnetic field in the well plane is suggested. It is demonstrated that the anisotropy of the Zeeman splitting (linear in a magnetic field) arises in asymmetric quantum wells due to the interface spin-orbit terms in the electron Hamiltonian. In the case of symmetric quantum wells, it is shown that the anisotropy of the Zeeman splitting is a cubic function of the magnitude of the magnetic field, depends on the direction of the magnetic field in the interface plane as the fourth-order harmonic, and is governed by the spin-orbit term of the fourth order by the kinematic momentum in the electron Hamiltonian of a bulk semiconductor.

  16. Structure-based Inhibitor Design for the Intrinsically Disordered Protein c-Myc

    PubMed Central

    Yu, Chen; Niu, Xiaogang; Jin, Fan; Liu, Zhirong; Jin, Changwen; Lai, Luhua

    2016-01-01

    Intrinsically disordered proteins (IDPs) are associated with various diseases and have been proposed as promising drug targets. However, conventional structure-based approaches cannot be applied directly to IDPs, due to their lack of ordered structures. Here, we describe a novel computational approach to virtually screen for compounds that can simultaneously bind to different IDP conformations. The test system used c-Myc, an oncoprotein containing a disordered basic helix-loop-helix-leucine zipper (bHLH-LZ) domain that adopts a helical conformation upon binding to Myc-associated factor X (Max). For the virtual screen, we used three binding pockets in representative conformations of c-Myc370–409, which is part of the disordered bHLH-LZ domain. Seven compounds were found to directly bind c-Myc370–409 in vitro, and four inhibited the growth of the c-Myc-overexpressing cells by affecting cell cycle progression. Our approach of IDP conformation sampling, binding site identification, and virtual screening for compounds that can bind to multiple conformations provides a useful strategy for structure-based drug discovery targeting IDPs. PMID:26931396

  17. Analytical modelling of a refractive index sensor based on an intrinsic micro Fabry-Perot interferometer.

    PubMed

    Vargas-Rodriguez, Everardo; Guzman-Chavez, Ana D; Cano-Contreras, Martin; Gallegos-Arellano, Eloisa; Jauregui-Vazquez, Daniel; Hernández-García, Juan C; Estudillo-Ayala, Julian M; Rojas-Laguna, Roberto

    2015-10-15

    In this work a refractive index sensor based on a combination of the non-dispersive sensing (NDS) and the Tunable Laser Spectroscopy (TLS) principles is presented. Here, in order to have one reference and one measurement channel a single-beam dual-path configuration is used for implementing the NDS principle. These channels are monitored with a couple of identical optical detectors which are correlated to calculate the overall sensor response, called here the depth of modulation. It is shown that this is useful to minimize drifting errors due to source power variations. Furthermore, a comprehensive analysis of a refractive index sensing setup, based on an intrinsic micro Fabry-Perot Interferometer (FPI) is described. Here, the changes over the FPI pattern as the exit refractive index is varied are analytically modelled by using the characteristic matrix method. Additionally, our simulated results are supported by experimental measurements which are also provided. Finally it is shown that by using this principle a simple refractive index sensor with a resolution in the order of 2.15 × 10(-4) RIU can be implemented by using a couple of standard and low cost photodetectors.

  18. Analytical Modelling of a Refractive Index Sensor Based on an Intrinsic Micro Fabry-Perot Interferometer

    PubMed Central

    Vargas-Rodriguez, Everardo; Guzman-Chavez, Ana D.; Cano-Contreras, Martin; Gallegos-Arellano, Eloisa; Jauregui-Vazquez, Daniel; Hernández-García, Juan C.; Estudillo-Ayala, Julian M.; Rojas-Laguna, Roberto

    2015-01-01

    In this work a refractive index sensor based on a combination of the non-dispersive sensing (NDS) and the Tunable Laser Spectroscopy (TLS) principles is presented. Here, in order to have one reference and one measurement channel a single-beam dual-path configuration is used for implementing the NDS principle. These channels are monitored with a couple of identical optical detectors which are correlated to calculate the overall sensor response, called here the depth of modulation. It is shown that this is useful to minimize drifting errors due to source power variations. Furthermore, a comprehensive analysis of a refractive index sensing setup, based on an intrinsic micro Fabry-Perot Interferometer (FPI) is described. Here, the changes over the FPI pattern as the exit refractive index is varied are analytically modelled by using the characteristic matrix method. Additionally, our simulated results are supported by experimental measurements which are also provided. Finally it is shown that by using this principle a simple refractive index sensor with a resolution in the order of 2.15 × 10−4 RIU can be implemented by using a couple of standard and low cost photodetectors. PMID:26501277

  19. Analytical modelling of a refractive index sensor based on an intrinsic micro Fabry-Perot interferometer.

    PubMed

    Vargas-Rodriguez, Everardo; Guzman-Chavez, Ana D; Cano-Contreras, Martin; Gallegos-Arellano, Eloisa; Jauregui-Vazquez, Daniel; Hernández-García, Juan C; Estudillo-Ayala, Julian M; Rojas-Laguna, Roberto

    2015-01-01

    In this work a refractive index sensor based on a combination of the non-dispersive sensing (NDS) and the Tunable Laser Spectroscopy (TLS) principles is presented. Here, in order to have one reference and one measurement channel a single-beam dual-path configuration is used for implementing the NDS principle. These channels are monitored with a couple of identical optical detectors which are correlated to calculate the overall sensor response, called here the depth of modulation. It is shown that this is useful to minimize drifting errors due to source power variations. Furthermore, a comprehensive analysis of a refractive index sensing setup, based on an intrinsic micro Fabry-Perot Interferometer (FPI) is described. Here, the changes over the FPI pattern as the exit refractive index is varied are analytically modelled by using the characteristic matrix method. Additionally, our simulated results are supported by experimental measurements which are also provided. Finally it is shown that by using this principle a simple refractive index sensor with a resolution in the order of 2.15 × 10(-4) RIU can be implemented by using a couple of standard and low cost photodetectors. PMID:26501277

  20. First principles study of Fe in diamond: A diamond-based half metallic dilute magnetic semiconductor

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2013-12-14

    Half-metallic ferromagnetic ordering in semiconductors, essential in the emerging field of spintronics for injection and transport of highly spin polarised currents, has up to now been considered mainly in III–V and II–VI materials. However, low Curie temperatures have limited implementation in room temperature device applications. We report ab initio Density Functional Theory calculations on the properties of Fe in diamond, considering the effects of lattice site, charge state, and Fermi level position. We show that the lattice sites and induced magnetic moments of Fe in diamond depend strongly on the Fermi level position and type of diamond co-doping, with Fe being energetically most favorable at the substitutional site in p-type and intrinsic diamond, while it is most stable at a divacancy site in n-type diamond. Fe induces spin polarized bands in the band gap, with strong hybridization between Fe-3d and C-2s,2p bands. We further consider Fe-Fe spin interactions in diamond and show that substitutional Fe{sup +1} in p-type diamond exhibits a half-metallic character, with a magnetic moment of 1.0 μ{sub B} per Fe atom and a large ferromagnetic stabilization energy of 33 meV, an order of magnitude larger than in other semiconductors, with correspondingly high Curie temperatures. These results, combined with diamond's unique properties, demonstrate that Fe doped p-type diamond is likely to be a highly suitable candidate material for spintronics applications.

  1. Multiple Exciton Generation in Semiconductor Nanostructures: DFT-based Computation

    NASA Astrophysics Data System (ADS)

    Mihaylov, Deyan; Kryjevski, Andrei; Kilin, Dmitri; Kilina, Svetlana; Vogel, Dayton

    Multiple exciton generation (MEG) in nm-sized H-passivated Si nanowires (NWs), and quasi 2D nanofilms depends strongly on the degree of the core structural disorder as shown by the perturbation theory calculations based on the DFT simulations. In perturbation theory, we work to the 2nd order in the electron-photon coupling and in the (approximate) RPA-screened Coulomb interaction. We also include the effect of excitons for which we solve Bethe-Salpeter Equation. To describe MEG we calculate exciton-to-biexciton as well as biexciton-to-exciton rates and quantum efficiency (QE). We consider 3D arrays of Si29H36 quantum dots, NWs, and quasi 2D silicon nanofilms, all with both crystalline and amorphous core structures. Efficient MEG with QE of 1.3 up to 1.8 at the photon energy of about 3Egap is predicted in these nanoparticles except for the crystalline NW and film where QE ~=1. MEG in the amorphous nanoparticles is enhanced by the electron localization due to structural disorder. The exciton effects significantly red-shift QE vs. photon energy curves. Nm-sized a-Si NWs and films are predicted to have effective MEG within the solar spectrum range. Also, we find efficient MEG in the chiral single-wall Carbon nanotubes and in a perovskite nanostructure.

  2. Theory of intrinsic linewidth based on fluctuation-dissipation balance for thermal photons in THz quantum-cascade lasers.

    PubMed

    Yamanishi, Masamichi

    2012-12-17

    Intrinsic linewidth formula modified by taking account of fluctuation-dissipation balance for thermal photons in a THz quantum-cascade laser (QCL) is exhibited. The linewidth formula based on the model that counts explicitly the influence of noisy stimulated emissions due to thermal photons existing inside the laser cavity interprets experimental results on intrinsic linewidth, ~91.1 Hz reported recently with a 2.5 THz bound-to-continuum QCL. The line-broadening induced by thermal photons is estimated to be ~22.4 Hz, i.e., 34% broadening. The modified linewidth formula is utilized as a bench mark in engineering of THz thermal photons inside laser cavities.

  3. Colorimetric detection of Shewanella oneidensis based on immunomagnetic capture and bacterial intrinsic peroxidase activity

    NASA Astrophysics Data System (ADS)

    Wen, Junlin; Zhou, Shungui; Chen, Junhua

    2014-06-01

    Rapid detection and enumeration of target microorganisms is considered as a powerful tool for monitoring bioremediation process that typically involves cleaning up polluted environments with functional microbes. A novel colorimetric assay is presented based on immunomagnetic capture and bacterial intrinsic peroxidase activity for rapidly detecting Shewanella oneidensis, an important model organism for environmental bioremediation because of its remarkably diverse respiratory abilities. Analyte bacteria captured on the immunomagnetic beads provided a bacterial out-membrane peroxidase-amplified colorimetric readout of the immunorecognition event by oxidizing 3, 3', 5, 5'-tetramethylbenzidine (TMB) in the present of hydrogen peroxide. The high-efficiency of immunomagnetic capture and signal amplification of peroxidase activity offers an excellent detection performance with a wide dynamic range between 5.0 × 103 and 5.0 × 106 CFU/mL toward target cells. Furthermore, this method was demonstrated to be feasible in detecting S. oneidensis cells spiked in environmental samples. The proposed colorimetric assay shows promising environmental applications for rapid detection of target microorganisms.

  4. Laser Chemosensor with Rapid Responsivity and Inherent Memory Based on a Polymer of Intrinsic Microporosity

    PubMed Central

    Wang, Yue; McKeown, Neil B.; Msayib, Kadhum J.; Turnbull, Graham A.; Samuel, Ifor D. W.

    2011-01-01

    This work explores the use of a polymer of intrinsic microporosity (PIM-1) as the active layer within a laser sensor to detect nitroaromatic-based explosive vapors. We show successful detection of dinitrobenzene (DNB) by monitoring the real-time photoluminescence. We also show that PIM-1 has an inherent memory, so that it accumulates the analyte during exposure. In addition, the optical gain and refractive index of the polymer were studied by amplified spontaneous emission and variable-angle ellipsometry, respectively. A second-order distributed feedback PIM-1 laser sensor was fabricated and found to show an increase in laser threshold of 2.5 times and a reduction of the laser slope efficiency by 4.4 times after a 5-min exposure to the DNB vapor. For pumping at 2 times threshold, the lasing action was stopped within 30 s indicating that PIM-1 has a very fast responsivity and as such has a potential sensing ability for ultra-low-concentration explosives. PMID:22163750

  5. Elucidation of intrinsic biosynthesis yields using 13C-based metabolism analysis

    PubMed Central

    2014-01-01

    This paper discusses the use of 13C-based metabolism analysis for the assessment of intrinsic product yields — the actual carbon contribution from a single carbon substrate to the final product via a specific biosynthesis route — in the following four cases. First, undefined nutrients (such as yeast extract) in fermentation may contribute significantly to product synthesis, which can be quantified through an isotopic dilution method. Second, product and biomass synthesis may be dependent on the co-metabolism of multiple-carbon sources. 13C labeling experiments can track the fate of each carbon substrate in the cell metabolism and identify which substrate plays a main role in product synthesis. Third, 13C labeling can validate and quantify the contribution of the engineered pathway (versus the native pathway) to the product synthesis. Fourth, the loss of catabolic energy due to cell maintenance (energy used for functions other than production of new cell components) and low P/O ratio (Phosphate/Oxygen Ratio) significantly reduces product yields. Therefore, 13C-metabolic flux analysis is needed to assess the influence of suboptimal energy metabolism on microbial productivity, and determine how ATP/NAD(P)H are partitioned among various cellular functions. Since product yield is a major determining factor in the commercialization of a microbial cell factory, we foresee that 13C-isotopic labeling experiments, even without performing extensive flux calculations, can play a valuable role in the development and verification of microbial cell factories. PMID:24642094

  6. Elucidation of intrinsic biosynthesis yields using 13C-based metabolism analysis.

    PubMed

    Varman, Arul M; He, Lian; You, Le; Hollinshead, Whitney; Tang, Yinjie J

    2014-03-19

    This paper discusses the use of 13C-based metabolism analysis for the assessment of intrinsic product yields - the actual carbon contribution from a single carbon substrate to the final product via a specific biosynthesis route - in the following four cases. First, undefined nutrients (such as yeast extract) in fermentation may contribute significantly to product synthesis, which can be quantified through an isotopic dilution method. Second, product and biomass synthesis may be dependent on the co-metabolism of multiple-carbon sources. 13C labeling experiments can track the fate of each carbon substrate in the cell metabolism and identify which substrate plays a main role in product synthesis. Third, 13C labeling can validate and quantify the contribution of the engineered pathway (versus the native pathway) to the product synthesis. Fourth, the loss of catabolic energy due to cell maintenance (energy used for functions other than production of new cell components) and low P/O ratio (Phosphate/Oxygen Ratio) significantly reduces product yields. Therefore, 13C-metabolic flux analysis is needed to assess the influence of suboptimal energy metabolism on microbial productivity, and determine how ATP/NAD(P)H are partitioned among various cellular functions. Since product yield is a major determining factor in the commercialization of a microbial cell factory, we foresee that 13C-isotopic labeling experiments, even without performing extensive flux calculations, can play a valuable role in the development and verification of microbial cell factories.

  7. Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors

    NASA Astrophysics Data System (ADS)

    Jie, Wenjing; Hao, Jianhua

    2014-05-01

    Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

  8. GaN nanostructure-based light emitting diodes and semiconductor lasers.

    PubMed

    Viswanath, Annamraju Kasi

    2014-02-01

    GaN and related materials have received a lot of attention because of their applications in a number of semiconductor devices such as LEDs, laser diodes, field effect transistors, photodetectors etc. An introduction to optical phenomena in semiconductors, light emission in p-n junctions, evolution of LED technology, bandgaps of various semiconductors that are suitable for the development of LEDs are discussed first. The detailed discussion on photoluminescence of GaN nanostructures is made, since this is crucial to develop optical devices. Fabrication technology of many nanostructures of GaN such as nanowires, nanorods, nanodots, nanoparticles, nanofilms and their luminescence properties are given. Then the optical processes including ultrafast phenomena, radiative, non-radiative recombination, quantum efficiency, lifetimes of excitons in InGaN quantum well are described. The LED structures based on InGaN that give various important colors of red, blue, green, and their design considerations to optimize the output were highlighted. The recent efforts in GaN technology are updated. Finally the present challenges and future directions in this field are also pointed out.

  9. Understanding the Influence of Intrinsic and Extrinsic Factors on Inquiry-Based Science Education at Township Schools in South Africa

    ERIC Educational Resources Information Center

    Ramnarain, Umesh

    2016-01-01

    This mixed-methods research investigated teachers' perceptions of intrinsic factors (personal attributes of the teacher) and extrinsic factors (environmental) influencing the implementation of inquiry-based science learning at township (underdeveloped urban area) high schools in South Africa. Quantitative data were collected by means of an adapted…

  10. THz semiconductor-based front-end receiver technology for space applications

    NASA Technical Reports Server (NTRS)

    Mehdi, Imran; Siegel, Peter

    2004-01-01

    Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

  11. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  12. Imaging performance comparison between a LaBr{sub 3}:Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera

    SciTech Connect

    Russo, P.; Mettivier, G.; Pani, R.; Pellegrini, R.; Cinti, M. N.; Bennati, P.

    2009-04-15

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr{sub 3}:Ce scintillator continuous crystal (49x49x5 mm{sup 3}) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14x14x1 mm{sup 3}) with 256x256 square pixels and a pitch of 55 {mu}m, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 {mu}m, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  13. Quantitative biomarkers of colonic dysplasia based on intrinsic second-harmonic generation signal.

    PubMed

    Zhuo, Shuangmu; Zhu, Xiaoqin; Wu, Guizhu; Chen, Jianxin; Xie, Shusen

    2011-12-01

    Most colorectal cancers arise from dysplastic lesions, such as adenomatous polyps, and these lesions are difficult to be detected by the current endoscopic screening approaches. Here, we present the use of an intrinsic second-harmonic generation (SHG) signal as a novel means to differentiate between normal and dysplastic human colonic tissues. We find that the SHG signal can quantitatively identify collagen change associated with colonic dysplasia that is indiscernible by conventional pathologic techniques. By comparing normal with dysplastic mucosa, there were significant differences in collagen density and collagen fiber direction, providing substantial potential to become quantitative intrinsic biomarkers for in vivo clinical diagnosis of colonic dysplasia.

  14. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1995-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  15. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1994-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  16. High responsivity 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Yang, Weifeng; Zhang, Feng; Liu, Zhuguang; Lü, Ying; Wu, Zhengyun

    2008-11-01

    4H-SiC based metal-semiconductor-metal (MSM) photodetectors with diverse spacing were designed, fabricated, and characterized, in which nickel Schottky contacts were needed. Current-voltage and spectral responsivity measurements were carried out at room temperature. The fabricated 4 μm-spacing device showed a very low dark current (0.25 pA at 5 V bias voltage), a typical responsivity of 0.103 A/W at 20 V, and a peak response wavelength at 290 nm. The fabricated devices held a high DUV to visible rejection ratio of >103.

  17. Noble metal-free hydrogen-evolving photocathodes based on small molecule organic semiconductors

    NASA Astrophysics Data System (ADS)

    Morozan, A.; Bourgeteau, T.; Tondelier, D.; Geffroy, B.; Jousselme, B.; Artero, V.

    2016-09-01

    Organic semiconductors have great potential for producing hydrogen in a sustainable and economically-viable manner because they rely on readily available materials with highly tunable properties. We demonstrate here the relevance of heterojunctions to the construction of H2-evolving photocathodes, exclusively based on earth-abundant elements. Boron subnaphthalocyanine chloride proved a very promising acceptor in that perspective. It absorbs a part of the solar spectrum complementary to α-sexithiophene as a donor, thus generating large photocurrents and providing a record onset potential for light-driven H2 evolution under acidic aqueous conditions using a nanoparticulate amorphous molybdenum sulfide catalyst.

  18. Ultrafast all-optical NOR gate based on semiconductor optical amplifier and fiber delay interferometer.

    PubMed

    Xu, Jing; Zhang, Xinliang; Liu, Deming; Huang, Dexiu

    2006-10-30

    An ultrafast all-optical logic NOR gate based on a semiconductor optical amplifier (SOA) and a fiber delay interferometer (FDI) is presented. For high-speed input return-to-zero (RZ) signal, nonreturn-to-zero (NRZ) switching windows which satisfy Boolean NOR operation can be formed by properly choosing the delay time and the phase shift of FDI. 40Gb/s NOR operation has been demonstrated successfully with low control optical power. The factors that degrade the NOR operation have been discussed.

  19. Ultrafast all-optical NOR gate based on semiconductor optical amplifier and fiber delay interferometer

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Zhang, Xinliang; Liu, Deming; Huang, Dexiu

    2006-10-01

    An ultrafast all-optical logic NOR gate based on a semiconductor optical amplifier (SOA) and a fiber delay interferometer (FDI) is presented. For high-speed input return-to-zero (RZ) signal, nonreturn-to-zero (NRZ) switching windows which satisfy Boolean NOR operation can be formed by properly choosing the delay time and the phase shift of FDI. 40Gb/s NOR operation has been demonstrated successfully with low control optical power. The factors that degrade the NOR operation have been discussed.

  20. Noble metal-free hydrogen-evolving photocathodes based on small molecule organic semiconductors.

    PubMed

    Morozan, A; Bourgeteau, T; Tondelier, D; Geffroy, B; Jousselme, B; Artero, V

    2016-09-01

    Organic semiconductors have great potential for producing hydrogen in a sustainable and economically-viable manner because they rely on readily available materials with highly tunable properties. We demonstrate here the relevance of heterojunctions to the construction of H2-evolving photocathodes, exclusively based on earth-abundant elements. Boron subnaphthalocyanine chloride proved a very promising acceptor in that perspective. It absorbs a part of the solar spectrum complementary to α-sexithiophene as a donor, thus generating large photocurrents and providing a record onset potential for light-driven H2 evolution under acidic aqueous conditions using a nanoparticulate amorphous molybdenum sulfide catalyst. PMID:27455142

  1. Electronic modification of Cu-based chalcopyrite semiconductors induced by lattice deformation and composition alchemy

    NASA Astrophysics Data System (ADS)

    Jiang, F. D.; Feng, J. Y.

    2008-02-01

    Using first principles calculation, we systematically investigate the electronic modification of Cu-based chalcopyrite semiconductors induced by lattice deformation and composition alchemy. It is shown that the optical band gap Eg is remarkably sensitive to the anion displacement μ, resulting from the opposite shifts of conduction band minimum and valence band maximum. Meanwhile, the dependence of structural parameters of alloyed compounds on alloy composition x is demonstrated for both cation and anion alloying. The d orbitals of group-III cations are found to be of great importance in the calculation. Abnormal changes in the optical band gap Eg induced by anion alloying are addressed.

  2. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

    SciTech Connect

    Herzog, Bastian Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike; Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W.

    2015-11-16

    Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

  3. Extracting Intrinsic Functional Networks with Feature-Based Group Independent Component Analysis

    ERIC Educational Resources Information Center

    Calhoun, Vince D.; Allen, Elena

    2013-01-01

    There is increasing use of functional imaging data to understand the macro-connectome of the human brain. Of particular interest is the structure and function of intrinsic networks (regions exhibiting temporally coherent activity both at rest and while a task is being performed), which account for a significant portion of the variance in…

  4. Achievement-Based Rewards and Intrinsic Motivation: A Test of Cognitive Mediators

    ERIC Educational Resources Information Center

    Cameron, Judy; Pierce, W. David; Banko, Katherine M.; Gear, Amber

    2005-01-01

    This study assessed how rewards impacted intrinsic motivation when students were rewarded for achievement while learning an activity, for performing at a specific level on a test, or for both. Undergraduate university students engaged in a problem-solving activity. The design was a 2 * 2 factorial with 2 levels of reward in a learning phase…

  5. Extended-Gate Metal Oxide Semiconductor Field Effect Transistor-Based Biosensor for Detection of Deoxynivalenol

    NASA Astrophysics Data System (ADS)

    Kwon, Insu; Lee, Hee-Ho; Choi, Jinhyeon; Shin, Jang-Kyoo; Seo, Sang-Ho; Choi, Sung-Wook; Chun, Hyang Sook

    2011-06-01

    In this work, we present an extended-gate metal oxide semiconductor field effect transistor (MOSFET)-based biosensor for the detection of deoxynivalenol using a null-balancing circuit. An extended-gate MOSFET-based biosensor was fabricated by a standard complementary metal oxide semiconductor (CMOS) process and its characteristics were measured. A null-balancing circuit was used to measure the output voltage of the sensor directly, instead of measuring the drain current of the sensor. Au was used as the gate metal, which has a chemical affinity with thiol, which leads to the immobilization of a self-assembled monolayer (SAM) of mercaptohexadecanoic acid (MHDA). The SAM was used to immobilize the anti-deoxynivalenol antibody. The carboxyl group of the SAM was bound to the anti-deoxynivalenol antibody. The anti-deoxynivalenol antibody and deoxynivalenol were bound by their antigen-antibody reaction. The measurements were performed in phosphate buffered saline (PBS; pH 7.4) solution. A standard Ag/AgCl electrode was employed as a reference electrode. The bindings of a SAM, anti-deoxynivalenol antibody, and deoxynivalenol caused a variation in the output voltage of the extended-gate MOSFET-based biosensor. Surface plasmon resonance (SPR) measurement was performed to verify the interaction among the SAM, deoxynivalenol-antibody, and deoxynivalenol.

  6. Charge carrier coherence and Hall effect in organic semiconductors

    PubMed Central

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  7. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    SciTech Connect

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-11-14

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

  8. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    NASA Astrophysics Data System (ADS)

    Shen, Haoting

    conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance

  9. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    NASA Astrophysics Data System (ADS)

    Shen, Haoting

    conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance

  10. Development of novel III-nitride-based dilute magnetic semiconductors for application in magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Wu, Stephen Y.

    The advances in the synthesis and characterization of novel dilute magnetic semiconductors (DMSs), AlxCr1-xN and GaxCr 1-xN, are described. This class of materials is essential for the advancement of semiconductor-based spintronics, an emerging area that combines the functionality of both the charge and the spin degree of freedom of an electron. If this can be realized, it could possibly lead to a new class of devices with enhanced capabilities. AlxCr1-xN and GaxCr1-xN thin films were gown by reactive molecular beam epitaxy (MBE). A thermochemistry approach was used in guiding and developing the growth of these DMSs. While an important goal was to achieve above room-temperature ferromagnetism, obtaining high crystal quality as well as maintaining its semiconducting properties is crucial for the integration of these films into devices. Under optimized conditions, the experimental data indicated that Al xCr1-xN and GaxCr1-xN exhibit ferromagnetism with Curie temperatures above 900 K, the highest Curie temperature reported to date. Although prior literature has suggested that ferromagnetism in these materials are partly due to ferromagnetic secondary phases, extensive structural characterization using x-ray diffraction and transmission electron microscopy indicate homogeneous single-phase epitaxial films. Angular-dependent channeling Rutherford backscattering spectroscopy was used to quantify the fraction of Cr atoms on substitutional, interstitial, and random lattice sites. Films grown at 775°C indicate that 90% of the Cr atoms are sitting on substitutional sites., whereas films grown at 825°C only had 17%. The effect of the Cr position in the III-N lattice was found to have a profound effect on the magnetic and electrical transport properties. The fabrication of magnetic tunnel junctions (MTJs) which utilize these DMSs were also investigated. Studies determining the feasibility of Ga xCr1-xN as a ferromagnetic electrode and AIN as a barrier material were carried

  11. Interrupted chalcogenide-based zeolite-analogue semiconductor: atomically precise doping for tunable electro-/photoelectrochemical properties.

    PubMed

    Lin, Jian; Dong, Youzhen; Zhang, Qian; Hu, Dandan; Li, Na; Wang, Le; Liu, Yang; Wu, Tao

    2015-04-20

    Incorporation of semiconductor property into zeolite materials is a plausible approach to graft oxide zeolites with multifunctionality in which both electronic/optoelectronic functions and high porosity are integrated. However, creating such semiconductor zeolites, especially the ones with controllable function regulation still remains as a great synthetic challenge over the years. Hereby, we reported the first case of an interrupted chalcogenide-based zeolite-analog semiconductor with an entirely new boracite-related framework and specific sites at the interrupted section. The semiconducting nature and band structure of this open-framework n-type semiconductor material were characterized with solid-state UV/Vis diffuse reflectance spectroscopy and Mott-Schottky measurements. More importantly, the In-Se chalcogenide zeolite analog was for the first time explored as an effective electrocatalyst for the oxygen reduction reaction (ORR). The specific indium sites served as active centers and proved to be responsible for a superior ORR activity. Meanwhile, these specific sites could be precisely replaced by bismuth(III) ions, leading to facile manipulation in their electro-/photoelectrochemical properties. Such atomically precise doping successfully implemented at the semiconductor zeolite material with specifically interrupted sites presents a very promising route for accurately regulating electronic structure and photoelectrical properties of other open-framework semiconductor materials.

  12. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.

    PubMed

    Ruzmetov, Dmitry; Zhang, Kehao; Stan, Gheorghe; Kalanyan, Berc; Bhimanapati, Ganesh R; Eichfeld, Sarah M; Burke, Robert A; Shah, Pankaj B; O'Regan, Terrance P; Crowne, Frank J; Birdwell, A Glen; Robinson, Joshua A; Davydov, Albert V; Ivanov, Tony G

    2016-03-22

    When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice. These results present a promising path toward the implementation of high-performance electronic devices based on 2D/3D vertical heterostructures, where each of the 3D and 2D semiconductors is both a template for subsequent epitaxial growth and an active component of the device. The MoS2 monolayer triangles average 1 μm along each side, with monolayer blankets (merged triangles) exhibiting properties similar to that of single-crystal MoS2 sheets. Photoluminescence, Raman, atomic force microscopy, and X-ray photoelectron spectroscopy analyses identified monolayer MoS2 with a prominent 20-fold enhancement of photoluminescence in the center regions of larger triangles. The MoS2/GaN structures are shown to electrically conduct in the out-of-plane direction, confirming the potential of directly synthesized 2D/3D semiconductor heterostructures for vertical current flow. Finally, we estimate a MoS2/GaN contact resistivity to be less than 4 Ω·cm(2) and current spreading in the MoS2 monolayer of approximately 1 μm in diameter. PMID:26866442

  13. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.

    PubMed

    Ruzmetov, Dmitry; Zhang, Kehao; Stan, Gheorghe; Kalanyan, Berc; Bhimanapati, Ganesh R; Eichfeld, Sarah M; Burke, Robert A; Shah, Pankaj B; O'Regan, Terrance P; Crowne, Frank J; Birdwell, A Glen; Robinson, Joshua A; Davydov, Albert V; Ivanov, Tony G

    2016-03-22

    When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice. These results present a promising path toward the implementation of high-performance electronic devices based on 2D/3D vertical heterostructures, where each of the 3D and 2D semiconductors is both a template for subsequent epitaxial growth and an active component of the device. The MoS2 monolayer triangles average 1 μm along each side, with monolayer blankets (merged triangles) exhibiting properties similar to that of single-crystal MoS2 sheets. Photoluminescence, Raman, atomic force microscopy, and X-ray photoelectron spectroscopy analyses identified monolayer MoS2 with a prominent 20-fold enhancement of photoluminescence in the center regions of larger triangles. The MoS2/GaN structures are shown to electrically conduct in the out-of-plane direction, confirming the potential of directly synthesized 2D/3D semiconductor heterostructures for vertical current flow. Finally, we estimate a MoS2/GaN contact resistivity to be less than 4 Ω·cm(2) and current spreading in the MoS2 monolayer of approximately 1 μm in diameter.

  14. Active photonic devices based on colloidal semiconductor nanocrystals and organometallic halide perovskites

    NASA Astrophysics Data System (ADS)

    Suárez Alvarez, Isaac

    2016-10-01

    Semiconductor nanocrystals have arisen as outstanding materials to develop a new generation of optoelectronic devices. Their fabrication under simple and low cost colloidal chemistry methods results in cheap nanostructures able to provide a wide range of optical functionalities. Their attractive optical properties include a high absorption cross section below the band gap, a high quantum yield emission at room temperature, or the capability of tuning the band-gap with the size or the base material. In addition, their solution process nature enables an easy integration on several substrates and photonic structures. As a consequence, these nanoparticles have been extensively proposed to develop several photonic applications, such as detection of light, optical gain, generation of light or sensing. This manuscript reviews the great effort undertaken by the scientific community to construct active photonic devices based on these nanoparticles. The conditions to demonstrate stimulated emission are carefully studied by comparing the dependence of the optical properties of the nanocrystals with their size, shape and composition. In addition, this paper describes the design of different photonic architectures (waveguides and cavities) to enhance the generation of photoluminescence, and hence to reduce the threshold of optical gain. Finally, semiconductor nanocrystals are compared to organometallic halide perovskites, as this novel material has emerged as an alternative to colloidal nanoparticles.

  15. Cyclopentadithiophene-Based Organic Semiconductors: Effect of Fluorinated Substituents on Electrochemical and Charge Transport Properties

    SciTech Connect

    Reddy, J. Sreedhar; Kale, Tejaswini; Balaji, Ganapathy; Chandrasekaran, A.; Thayumanavan, S.

    2011-03-17

    Thiophene-based semiconductors are often hole conductors that have been converted to electron-transporting materials by incorporation of electron-withdrawing groups at terminal positions, such as fluorinated substituents. This conversion of an otherwise p-type material to n-type material is often attributed to the lowering of the lowest unoccupied molecular orbital (LUMO) energy level due to the increased electron affinity in the molecule. Yet, it is not clear if lowering of LUMO energy level is a sufficient condition for yielding n-type material. Herein, we report small-molecule semiconductors based on cyclopentadithiophene (CPD), which can be orthogonally functionalized at two different positions, which allows us to tune the frontier orbital energy levels. We find that simply lowering the LUMO energy level, without inclusion of fluoro groups, does not result in conversion of the otherwise p-type material to n-type material, whereas incorporation of fluorinated substituents does. This indicates that charge transport behavior is not an exclusive function of the frontier orbital energy levels.

  16. Web-based interactive educational software introducing semiconductor laser dynamics: Sound of Lasers (SOL)

    NASA Astrophysics Data System (ADS)

    Consoli, Antonio; Sanchez, Jorge R.; Horche, Paloma R.; Esquivias, Ignacio

    2014-07-01

    presented. The proposed tool is addressed to the students of optical communication courses, encouraging self consolidation of the subjects learned in lectures. The semiconductor laser model is based on the well known rate equations for the carrier density, photon density and optical phase. The direct modulation of the laser is considered with input parameters which can be selected by the user. Different options for the waveform, amplitude and frequency of the injected current are available, together with the bias point. Simulation results are plotted for carrier density and output power versus time. Instantaneous frequency variations of the laser output are numerically shifted to the audible frequency range and sent to the computer loudspeakers. This results in an intuitive description of the "chirp" phenomenon due to amplitude-phase coupling, typical of directly modulated semiconductor lasers. In this way, the student can actually listen to the time resolved spectral content of the laser output. By changing the laser parameters and/or the modulation parameters, consequent variation of the laser output can be appreciated in intuitive manner. The proposed educational tool has been previously implemented by the same authors with locally executable software. In the present manuscript, we extend our previous work to a web based platform, offering improved distribution and allowing its use to the wide audience of the web.

  17. Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

    SciTech Connect

    Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

    2010-08-23

    An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

  18. Multianalyte biosensor based on pH-sensitive ZnO electrolyte-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Haur Kao, Chyuan; Chen, Hsiang; Ling Lee, Ming; Chun Liu, Che; Ueng, Herng-Yih; Cheng Chu, Yu; Jie Chen, Yu; Ming Chang, Kow

    2014-05-01

    Multianalyte electrolyte-insulator-semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na+, K+, urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 °C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed for use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications.

  19. Multianalyte biosensor based on pH-sensitive ZnO electrolyte–insulator–semiconductor structures

    SciTech Connect

    Haur Kao, Chyuan; Chun Liu, Che; Ueng, Herng-Yih; Chen, Hsiang Cheng Chu, Yu; Jie Chen, Yu; Ling Lee, Ming; Ming Chang, Kow

    2014-05-14

    Multianalyte electrolyte–insulator–semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na{sup +}, K{sup +}, urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 °C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed for use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications.

  20. Diagnostics of gear faults based on EMD and automatic selection of intrinsic mode functions

    NASA Astrophysics Data System (ADS)

    Ricci, Roberto; Pennacchi, Paolo

    2011-04-01

    Signal processing is an important tool for diagnostics of mechanical systems. Many different techniques are available to process experimental signals, among others: FFT, wavelet transform, cepstrum, demodulation analysis, second order ciclostationarity analysis, etc. However, often hypothesis about data and computational efforts restrict the application of some techniques. In order to overcome these limitations, the empirical mode decomposition has been proposed. The outputs of this adaptive approach are the intrinsic mode functions that are treated with the Hilbert transform in order to obtain the Hilbert-Huang spectrum. Anyhow, the selection of the intrinsic mode functions used for the calculation of Hilbert-Huang spectrum is normally done on the basis of user's experience. On the contrary, in the paper a merit index is introduced that allows the automatic selection of the intrinsic mode functions that should be used. The effectiveness of the improvement is proven by the result of the experimental tests presented and performed on a test-rig equipped with a spiral bevel gearbox, whose high contact ratio made difficult to diagnose also serious damages of the gears. This kind of gearbox is normally never employed for benchmarking diagnostics techniques. By using the merit index, the defective gearbox is always univocally identified, also considering transient operating conditions.

  1. Intrinsic and metal-doped gallium oxide based high-temperature oxygen sensors for combustion processes

    NASA Astrophysics Data System (ADS)

    Rubio, Ernesto Javier

    films were evaluated as a function of W-content. The structural analyses indicate the formation of monoclinic beta-phase 2O3 in as-grown W-doped 2O3 films for all W-content. Thermally induced secondary phase (W-oxide) formation was observed after the annealing process. Chemical analysis demonstrates the increasing W atomic percentage in the films with increasing sputtering power, whereas the main metallic ionic species for the films are W6+ and Ga3+. Evidence of W interdiffusion due to the annealing process is presented, and the mechanism of diffusion is discussed. Surface morphology of the films is also discussed, and the transition to mesoporous surface is observed after annealing. Finally, the oxygen sensor performance evaluation demonstrated that the W-incorporated 2O3 exhibits improved response time compared to intrinsic 2O3 based oxygen sensors.

  2. Silicon photonics WDM interconnects based on resonant ring modulators and semiconductor mode locked laser

    NASA Astrophysics Data System (ADS)

    Müller, J.; Hauck, J.; Shen, B.; Romero-García, S.; Islamova, E.; Sharif Azadeh, S.; Joshi, S.; Chimot, N.; Moscoso-Mártir, A.; Merget, F.; Lelarge, F.; Witzens, J.

    2015-03-01

    We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps based on optical carrier generation with a single-section semiconductor mode-locked laser (SS-MLL) and modulation with a Silicon Photonics (SiP) resonant ring modulator (RRM). 18 channels are sequentially measured, whereas the best recorded eye diagrams feature signal quality factors (Q-factors) above 7. While optical re-amplification was necessary to maintain the link budgets and therefore system measurements were performed with an erbium doped fiber amplifier (EDFA), preliminary characterization done with a semiconductor optical amplifier (SOA) indicates compatibility with the latter pending the integration of an additional optical filter to select a subset of carriers and prevent SOA saturation. A systematic analysis of the relative intensity noise (RIN) of isolated comb lines and of signal Q-factors indicates that the link is primarily limited by amplified spontaneous emission (ASE) from the EDFA rather than laser RIN. Measured RIN for single comb components is below -120 dBc/Hz in the range from 7 MHz to 4 GHz and drops to the shot noise level at higher frequencies.

  3. Semiconductor-based photoelectrochemical water splitting at the limit of very wide depletion region

    DOE PAGES

    Liu, Mingzhao; Lyons, John L.; Yan, Danhua H.; Hybertsen, Mark S.

    2015-11-23

    In semiconductor-based photoelectrochemical (PEC) water splitting, carrier separation and delivery largely relies on the depletion region formed at the semiconductor/water interface. As a Schottky junction device, the trade-off between photon collection and minority carrier delivery remains a persistent obstacle for maximizing the performance of a water splitting photoelectrode. Here, it is demonstrated that the PEC water splitting efficiency for an n-SrTiO3 (n-STO) photoanode is improved very significantly despite its weak indirect band gap optical absorption (α < 10⁴ cm⁻¹), by widening the depletion region through engineering its doping density and profile. Graded doped n-SrTiO3 photoanodes are fabricated with their bulkmore » heavily doped with oxygen vacancies but their surface lightly doped over a tunable depth of a few hundred nanometers, through a simple low temperature re-oxidation technique. The graded doping profile widens the depletion region to over 500 nm, thus leading to very efficient charge carrier separation and high quantum efficiency (>70%) for the weak indirect transition. As a result, this simultaneous optimization of the light absorption, minority carrier (hole) delivery, and majority carrier (electron) transport by means of a graded doping architecture may be useful for other indirect band gap photocatalysts that suffer from a similar problem of weak optical absorption.« less

  4. Frequency tunable optoelectronic oscillator based on a directly modulated DFB semiconductor laser under optical injection.

    PubMed

    Wang, Peng; Xiong, Jintian; Zhang, Tingting; Chen, Dalei; Xiang, Peng; Zheng, Jilin; Zhang, Yunshan; Li, Ruoming; Huang, Long; Pu, Tao; Chen, Xiangfei

    2015-08-10

    A frequency tunable optoelectronic oscillator based on a directly modulated distributed-feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. Through optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency can enable the loop oscillation with a RF threshold gain of less than 20 dB. The DFB laser is a commercial semiconductor laser with a package of 10 GHz, and its packaging limitation can be overcome by optical injection. In our scheme, neither a high-speed external modulator nor an electrical bandpass filter is required, making the system simple and low-cost. Microwave signals with a frequency tuning range from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers. The phase noise of the generated 9.75 GHz microwave signal is measured to be -104.8 dBc/Hz @ 10 kHz frequency offset.

  5. Semiconductor-based photoelectrochemical water splitting at the limit of very wide depletion region

    SciTech Connect

    Liu, Mingzhao; Lyons, John L.; Yan, Danhua H.; Hybertsen, Mark S.

    2015-11-23

    In semiconductor-based photoelectrochemical (PEC) water splitting, carrier separation and delivery largely relies on the depletion region formed at the semiconductor/water interface. As a Schottky junction device, the trade-off between photon collection and minority carrier delivery remains a persistent obstacle for maximizing the performance of a water splitting photoelectrode. Here, it is demonstrated that the PEC water splitting efficiency for an n-SrTiO3 (n-STO) photoanode is improved very significantly despite its weak indirect band gap optical absorption (α < 10⁴ cm⁻¹), by widening the depletion region through engineering its doping density and profile. Graded doped n-SrTiO3 photoanodes are fabricated with their bulk heavily doped with oxygen vacancies but their surface lightly doped over a tunable depth of a few hundred nanometers, through a simple low temperature re-oxidation technique. The graded doping profile widens the depletion region to over 500 nm, thus leading to very efficient charge carrier separation and high quantum efficiency (>70%) for the weak indirect transition. As a result, this simultaneous optimization of the light absorption, minority carrier (hole) delivery, and majority carrier (electron) transport by means of a graded doping architecture may be useful for other indirect band gap photocatalysts that suffer from a similar problem of weak optical absorption.

  6. Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors.

    PubMed

    Vitiello, Miriam S; Coquillat, Dominique; Viti, Leonardo; Ercolani, Daniele; Teppe, Frederic; Pitanti, Alessandro; Beltram, Fabio; Sorba, Lucia; Knap, Wojciech; Tredicucci, Alessandro

    2012-01-11

    The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source-drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 × 10(-9) W/(Hz)(1/2) at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipixel arrays, make these devices highly competitive as a future solution for terahertz detection. PMID:22149118

  7. Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

    NASA Technical Reports Server (NTRS)

    Kolokolov, K.; Li, J.; Ning, C. Z.; Larrabee, D. C.; Tang, J.; Khodaparast, G.; Kono, J.; Sasa, S.; Inoue, M.; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

  8. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier

    PubMed Central

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing. PMID:26813252

  9. An HEMT-Based Cryogenic Charge Amplifier for Sub-kelvin Semiconductor Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Phipps, A.; Sadoulet, B.; Juillard, A.; Jin, Y.

    2016-07-01

    We present the design and noise performance of a fully cryogenic (T=4 K) high-electron mobility transistor (HEMT)-based charge amplifier for readout of sub-kelvin semiconductor radiation detectors. The amplifier is being developed for use in direct detection dark matter searches such as the cryogenic dark matter search and will allow these experiments to probe weakly interacting massive particle masses below 10 GeV/c^2 while retaining background discrimination. The amplifier dissipates ≈ 1 mW of power and provides an open loop voltage gain of several hundreds. The measured noise performance is better than that of JFET-based charge amplifiers and is dominated by the noise of the input HEMT. An optimal filter calculation using the measured closed loop noise and typical detector characteristics predicts a charge resolution of σ _q=106 eV (35 electrons) for leakage currents below 4 × 10^{-15} A.

  10. Two approaches for ultrafast random bit generation based on the chaotic dynamics of a semiconductor laser.

    PubMed

    Li, Nianqiang; Kim, Byungchil; Chizhevsky, V N; Locquet, A; Bloch, M; Citrin, D S; Pan, Wei

    2014-03-24

    This paper reports the experimental investigation of two different approaches to random bit generation based on the chaotic dynamics of a semiconductor laser with optical feedback. By computing high-order finite differences of the chaotic laser intensity time series, we obtain time series with symmetric statistical distributions that are more conducive to ultrafast random bit generation. The first approach is guided by information-theoretic considerations and could potentially reach random bit generation rates as high as 160 Gb/s by extracting 4 bits per sample. The second approach is based on pragmatic considerations and could lead to rates of 2.2 Tb/s by extracting 55 bits per sample. The randomness of the bit sequences obtained from the two approaches is tested against three standard randomness tests (ENT, Diehard, and NIST tests), as well as by calculating the statistical bias and the serial correlation coefficients on longer sequences of random bits than those used in the standard tests.

  11. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier.

    PubMed

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-27

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing.

  12. Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2016-06-01

    Peculiarities of determining the concentration and distribution profile of dopant in the near-surface layer of a semiconductor by measuring the admittance of MIS structures based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy are studied. A technique is proposed for the determining the concentration of dopant based on the measurement of the admittance of MIS structures in the frequency range of 50 kHz - 1 MHz. It is shown that in this frequency range, the capacitance-voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer have a high- frequency behavior with respect to the recharge time of surface states located near the Fermi level of intrinsic semiconductor. The distribution profile of dopant in the nearsurface layer of the semiconductor is calculated. It is shown that in p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has the lowest value near the interface with the insulator.

  13. Quantitative biomarkers of human skin photoaging based on intrinsic second harmonic generation signal.

    PubMed

    Zhuo, Shuangmu; Zhu, Xiaoqin; Chen, Jianxin; Xie, Shusen

    2013-01-01

    Collagen change is a major feature in the photoaged human skin. Here, we present the use of intrinsic second harmonic generation (SHG) signal as a novel means to quantify collagen change with photoaging. We obtain the SHG images of the superficial dermis from ex vivo the cheek skin and the abdomen skin of eight patients aged 55-60 years. The results show that SHG signal can quantitatively reveal collagen change between normal and photoaged human skin in three dimensions. By comparing normal with photoaged dermis, there are significant differences in the collagen content and fine structure, providing substantial potential to be applied in vivo for the clinical diagnosis of human skin photoaging.

  14. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

    SciTech Connect

    Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

    2003-12-01

    The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

  15. Magnetic fields and the technology challenges they pose to beam-based equipment: a semiconductor perspective

    NASA Astrophysics Data System (ADS)

    Esqueda, Vincent; Montoya, Julian A.

    2005-08-01

    As semiconductor devices shrink in size to accommodate faster processing speeds, the need for higher resolution beam-based metrology equipment and beam-based writing equipment will increase. The electron and ion beams used within these types of equipment are sensitive to very small variations in magnetic force applied to the beam. This phenomenon results from changes in Alternating Current (AC) and Direct Current (DC) magnetic flux density at the beam column which causes deflections of the beam that can impact equipment performance. Currently the most sensitive beam-based microscope manufacturers require an ambient magnetic field environment that does not have variations that exceed 0.2 milli-Gauss (mG). Studies have shown that such low levels of magnetic flux density can be extremely difficult to achieve. As examples, scissor lifts, vehicles, metal chairs, and doors moving in time and space under typical use conditions can create distortions in the Earth's magnetic field that can exceed 0.2 mG at the beam column. In addition it is known that changes in the Earth's magnetic field caused by solar flares, earthquakes, and variations in the Earth's core itself all cause changes in the magnetic field that can exceed 0.2 mG. This paper will provide the reader with the basic understanding of the emerging problem, will discuss the environmental and facility level challenges associated in meeting such stringent magnetic field environments, will discuss some of the mitigation techniques used to address the problem, and will close by discussing needs for further research in this area to assure semiconductor and nanotechnology industries are pre-positioned for even more stringent magnetic field environmental requirements.

  16. LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Optical velocimeter based on a semiconductor laser

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya; Dubnishchev, Yu N.; Meledin, V. G.

    1988-03-01

    It is shown that optical velocimeters using diffraction beam splitters are not critically sensitive to the stability of the emission wavelength of a semiconductor laser. A functional scheme of a semiconductor laser source with systems for stabilization of the temperature and pump current is described. The technical characteristics are given of a semiconductor-laser velocimeter for the determination of the velocity and length of rolling stock.

  17. Machine Learning Classification of Cirrhotic Patients with and without Minimal Hepatic Encephalopathy Based on Regional Homogeneity of Intrinsic Brain Activity

    PubMed Central

    Liu, Jun; Sun, Tao; Shen, Qun-Tai

    2016-01-01

    Machine learning-based approaches play an important role in examining functional magnetic resonance imaging (fMRI) data in a multivariate manner and extracting features predictive of group membership. This study was performed to assess the potential for measuring brain intrinsic activity to identify minimal hepatic encephalopathy (MHE) in cirrhotic patients, using the support vector machine (SVM) method. Resting-state fMRI data were acquired in 16 cirrhotic patients with MHE and 19 cirrhotic patients without MHE. The regional homogeneity (ReHo) method was used to investigate the local synchrony of intrinsic brain activity. Psychometric Hepatic Encephalopathy Score (PHES) was used to define MHE condition. SVM-classifier was then applied using leave-one-out cross-validation, to determine the discriminative ReHo-map for MHE. The discrimination map highlights a set of regions, including the prefrontal cortex, anterior cingulate cortex, anterior insular cortex, inferior parietal lobule, precentral and postcentral gyri, superior and medial temporal cortices, and middle and inferior occipital gyri. The optimized discriminative model showed total accuracy of 82.9% and sensitivity of 81.3%. Our results suggested that a combination of the SVM approach and brain intrinsic activity measurement could be helpful for detection of MHE in cirrhotic patients. PMID:26978777

  18. Chemical composition, crystal structure, and their relationships with the intrinsic properties of spinel-type crystals based on bond valences.

    PubMed

    Liu, Xiao; Wang, Hao; Lavina, Barbara; Tu, Bingtian; Wang, Weimin; Fu, Zhengyi

    2014-06-16

    Spinel-type crystals may possess complex and versatile chemical composition and crystal structure, which leads to difficulty in constructing relationships among the chemical composition, crystal structure, and intrinsic properties. In this work, we develop new empirical methods based on bond valences to estimate the intrinsic properties, namely, compressibility and thermal expansion of complex spinel-type crystals. The composition-weighted average of bond force constants in tetrahedral and octahedral coordination polyhedra is derived as a function of the composition-weighted average of bond valences, which can be calculated according to the experimental chemical composition and crystal structural parameters. We discuss the coupled effects of tetrahedral and octahedral frameworks on the aforementioned intrinsic properties. The bulk modulus could be quantitatively calculated from the composition-weighted average of bond force constants in tetrahedral and octahedral coordination polyhedra. In contrast, a quantitative estimation of the thermal expansion coefficient could be obtained from the composition-weighted average of bond force constants in octahedral coordination polyhedra. These empirical methods have been validated by the results obtained for a new complex quaternary spinel-type oxynitride Mg0.268Al2.577O3.733N0.267 as well as MgAl2O4 and Al2.85O3.45N0.55 from the literature. Further, these empirical methods have the potential to be extensively applied in other types of complex crystals.

  19. Intrinsic motivation factors based on the self-determinant theory for regular breast cancer screening.

    PubMed

    Jung, Su Mi; Jo, Heui-Sug

    2014-01-01

    The purpose of this study was to identify factors of intrinsic motivation that affect regular breast cancer screening and contribute to development of a program for strategies to improve effective breast cancer screening. Subjects were residing in South Korea Gangwon-Province and were female over 40 and under 69 years of age. For the investigation, the Intrinsic Motivation Inventory (IMI) was modified to the situation of cancer screening and was used to survey 905 inhabitants. Multinominal logistic regression analyses were conducted for regular breast cancer screening (RS), one-time breast cancer screening (OS) and non-breast cancer screening (NS). For statistical analysis, IBM SPSS 20.0 was utilized. The determinant factors between RS and NS were "perceived effort and choice" and "stress and strain" - internal motivations related to regular breast cancer screening. Also, determinant factors between RS and OS are "age" and "perceived effort and choice" for internal motivation related to cancer screening. To increase regular screening, strategies that address individual perceived effort and choice are recommended.

  20. Intrinsic motivation factors based on the self-determinant theory for regular breast cancer screening.

    PubMed

    Jung, Su Mi; Jo, Heui-Sug

    2014-01-01

    The purpose of this study was to identify factors of intrinsic motivation that affect regular breast cancer screening and contribute to development of a program for strategies to improve effective breast cancer screening. Subjects were residing in South Korea Gangwon-Province and were female over 40 and under 69 years of age. For the investigation, the Intrinsic Motivation Inventory (IMI) was modified to the situation of cancer screening and was used to survey 905 inhabitants. Multinominal logistic regression analyses were conducted for regular breast cancer screening (RS), one-time breast cancer screening (OS) and non-breast cancer screening (NS). For statistical analysis, IBM SPSS 20.0 was utilized. The determinant factors between RS and NS were "perceived effort and choice" and "stress and strain" - internal motivations related to regular breast cancer screening. Also, determinant factors between RS and OS are "age" and "perceived effort and choice" for internal motivation related to cancer screening. To increase regular screening, strategies that address individual perceived effort and choice are recommended. PMID:25556433

  1. Ballistic thermal transport properties at low temperatures in semiconductor nanowires-based heterojunctions

    NASA Astrophysics Data System (ADS)

    Yu, Xia; Xie, Zhong-Xiang; Liu, Jun-Hun; Chen, Qiao; Li, Ke-Min; Zhang, Yong

    2016-04-01

    In this paper, we study ballistic thermal transport properties at low temperatures in semiconductor nanowires-based heterojunctions under hard-wall boundary conditions (HWBCs) and stress-free boundary conditions (SFBCs). Here, the numerical calculations for the asymmetric heterojunction (ASHJ) and symmetric heterojunction (SHJ) are done. When SFBCs are employed, the transmission coefficient exhibits different behaviors between ASHJ and SHJ especially at low frequency, but when HWBCs are employed, the transmission coefficient displays similar smooth platforms in both heterojunctions. In low temperature limit, the quantized thermal conductance can be observed in SHJ under SFBCs regardless of the structural details. However, this quantization cannot be observed in ASHJ under SFBCs, and the thermal conductance is strongly sensitive to the transverse width ratio rather than the slant angle. With increasing the transverse width ratio, the thermal conductance in both heterojunctions gradually increases especially, and such the increasing degree is more evident at higher temperatures. A brief analysis of these results is given.

  2. Characterization of TiO2-based semiconductors for photocatalysis by electrochemical impedance spectroscopy

    NASA Astrophysics Data System (ADS)

    Ângelo, Joana; Magalhães, Pedro; Andrade, Luísa; Mendes, Adélio

    2016-11-01

    The photocatalytic activity of a commercial titanium dioxide (P25) and of an in-house prepared P25/graphene composite is assessed according to standard ISO 22197-1:2007. The photoactivity performances of bare and composite TiO2-based materials were further studied by electrochemical impedance spectroscopy (EIS) technique to better understand the function of the graphene in the composite. EIS experiments were performed using a three-electrode configuration, which allows obtaining more detailed information about the complex charge transfer phenomena at the semiconductor/electrolyte interface. The Randles equivalent circuit was selected as the most suitable for modelling the present photocatalysts. The use of the graphene composite allows a more effective charge separation with lower charge transfer resistance and less e-/h+ recombination on the composite photocatalyst, reflected in the higher values of NO conversion.

  3. Solid-state semiconductor optical cryocooler based on CdS nanobelts.

    PubMed

    Li, Dehui; Zhang, Jun; Wang, Xinjiang; Huang, Baoling; Xiong, Qihua

    2014-08-13

    We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from 290 K under a 3.8 mW 514 nm and a 4.4 mW 532 nm pumping, respectively. In contrast, a laser heating effect has been observed pumped by 502 and 488 nm lasers. Theoretical analysis based on the general static heat conduction module in the Ansys program package is conducted, which agrees well with the experimental results. Our investigations demonstrate the laser cooling capability of an external thermal load, suggesting the applications of II-VI semiconductors in all-solid-state optical cryocoolers.

  4. Synchronized 4 × 12 GHz hybrid harmonically mode-locked semiconductor laser based on AWG.

    PubMed

    Liu, S; Lu, D; Zhang, R; Zhao, L; Wang, W; Broeke, R; Ji, C

    2016-05-01

    We report a monolithically integrated synchronized four wavelength channel mode-locked semiconductor laser chip based on arrayed waveguide grating and fabricated in the InP material system. Device fabrication was completed in a multiproject wafer foundry run on the Joint European Platform for Photonic Integration of Components and Circuits. The integrated photonic chip demonstrated 5th harmonic electrical hybrid mode-locking operation with four 400 GHz spacing wavelength channels and synchronized to a 12.7 GHz RF clock, for nearly transform-limited optical pulse trains from a single output waveguide. A low timing jitter of 0.349 ps, and RF frequency locking range of ~50 MHz were also achieved. PMID:27137587

  5. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-07-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis.

  6. Synchronized 4 × 12 GHz hybrid harmonically mode-locked semiconductor laser based on AWG.

    PubMed

    Liu, S; Lu, D; Zhang, R; Zhao, L; Wang, W; Broeke, R; Ji, C

    2016-05-01

    We report a monolithically integrated synchronized four wavelength channel mode-locked semiconductor laser chip based on arrayed waveguide grating and fabricated in the InP material system. Device fabrication was completed in a multiproject wafer foundry run on the Joint European Platform for Photonic Integration of Components and Circuits. The integrated photonic chip demonstrated 5th harmonic electrical hybrid mode-locking operation with four 400 GHz spacing wavelength channels and synchronized to a 12.7 GHz RF clock, for nearly transform-limited optical pulse trains from a single output waveguide. A low timing jitter of 0.349 ps, and RF frequency locking range of ~50 MHz were also achieved.

  7. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  8. Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots

    SciTech Connect

    Vitukhnovskii, A. G. Vashchenko, A. A.; Lebedev, V. S.; Vasiliev, R. B.; Brunkov, P. N.; Bychkovskii, D. N.

    2013-07-15

    The results of an experimental study of organic light-emitting diodes (LEDs) with luminescent layers based on two types of CdSe/CdS semiconductor quantum dots (QDs) with an average CdSe core diameter of 3 and 5 nm and a characteristic CdS shell thickness of 0.5 nm are presented. The dependences of the LED efficiency on the QD concentration are determined. The experimental data are used to determine the mechanism of electronic-excitation transfer from the organic matrix to the semiconductor QDs. Ways of optimizing the design of the LEDs in order to improve their efficiency are suggested on this basis.

  9. Fast-response humidity-sensing films based on methylene blue aggregates formed on nanoporous semiconductor films

    NASA Astrophysics Data System (ADS)

    Ishizaki, Ryota; Katoh, Ryuzi

    2016-05-01

    We prepared fast-response colorimetric humidity-sensing (vapochromic) films based on methylene blue adsorption onto nanoporous semiconductor (TiO2, Al2O3) films. Color changes caused by changes of humidity could be easily identified visually. A characteristic feature of the vapochromic films was their fast response to changes of humidity. We found that the response began to occur within 10 ms. The response was rapid because all the methylene blue molecules attached to the nanoporous semiconductor surface were directly exposed to the environment. We also deduced that the color changes were caused by structural changes of the methylene blue aggregates on the surface.

  10. Semiconductor detectors with proximity signal readout

    SciTech Connect

    Asztalos, Stephen J.

    2014-01-30

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  11. Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.

    PubMed

    Baeg, Kang-Jun; Caironi, Mario; Noh, Yong-Young

    2013-08-21

    For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been struggling to meet the requirements for mass-produced electronics and optoelectronics applications despite their great potential. In the case of logic integrated circuits (ICs), which constitute the focus of this Progress Report, the main limitations have been represented by the need of suitable functional inks, mainly high-mobility printable semiconductors and low sintering temperature conducting inks, and evoluted printing tools capable of higher resolution, registration and uniformity than needed in the conventional graphic arts printing sector. Solution-processable polymeric semiconductors are the best candidates to fulfill the requirements for printed logic ICs on flexible substrates, due to their superior processability, ease of tuning of their rheology parameters, and mechanical properties. One of the strongest limitations has been mainly represented by the low charge carrier mobility (μ) achievable with polymeric, organic field-effect transistors (OFETs). However, recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon (a-Si). Interestingly these values were achieved thanks to the design and synthesis of donor-acceptor copolymers, showing limited degree of order when processed in thin films and therefore fostering further studies on the reason leading to such improved charge

  12. Intrinsic Disorder-Based Design of Stabilizing Disulphide Bridge in Gαo Protein.

    PubMed

    Nagibina, Galina S; Tin, Ulyana F; Glukhov, Anatoly S; Melnik, Tatiana N; Melnik, Bogdan S

    2016-01-01

    In this study, we have used an approach that allows us to determine in what region of the polypeptide chain of protein it is required to insert a disulphide bond in order to stabilize it. In our previous paper [Melnik et al., JBSD. 2012] it was proposed that to search for a "weak" site in the protein, it is possible to use programs (for example, PONDR-FIT and IsUnstruct) finding intrinsic disorder protein regions. We suggested that in structured globular proteins, such programs predict not protein regions in the polypeptide chain disordered under native conditions, but "weakened", feebly stabilized ones. Accordingly, an artificial introduction of SS-bridges using mutations in such regions would reliably result in the protein stabilization. We have taken advantage of this approach to stabilize protein Gαo from Drosophila melanogaster. The designed SS-bridge increased by 4 degrees the melting temperature of one domain of protein Gαo.

  13. KMAD: knowledge-based multiple sequence alignment for intrinsically disordered proteins

    PubMed Central

    Lange, Joanna; Wyrwicz, Lucjan S.; Vriend, Gert

    2016-01-01

    Summary: Intrinsically disordered proteins (IDPs) lack tertiary structure and thus differ from globular proteins in terms of their sequence–structure–function relations. IDPs have lower sequence conservation, different types of active sites and a different distribution of functionally important regions, which altogether make their multiple sequence alignment (MSA) difficult. The KMAD MSA software has been written specifically for the alignment and annotation of IDPs. It augments the substitution matrix with knowledge about post-translational modifications, functional domains and short linear motifs. Results: MSAs produced with KMAD describe well-conserved features among IDPs, tend to agree well with biological intuition, and are a good basis for designing new experiments to shed light on this large, understudied class of proteins. Availability and implementation: KMAD web server is accessible at http://www.cmbi.ru.nl/kmad/. A standalone version is freely available. Contact: vriend@cmbi.ru.nl PMID:26568635

  14. Assessment of the intrinsic uncertainty of the k0-based NAA

    NASA Astrophysics Data System (ADS)

    Bučar, Tinkara; Smodiš, Borut

    2006-08-01

    This paper addresses the intrinsic uncertainty of k0 neutron activation analysis (NAA) by evaluating the partial uncertainties of the nuclear parameters and parameters given by the irradiation conditions. Uncertainty propagation factors are determined from the basic equations of the k0-NAA and the combined uncertainties are calculated using a software package specially developed for this purpose. The nuclear parameter values and respective uncertainties are taken from an IUPAC database. The uncertainties are calculated for specific conditions given at the TRIGA Mark II reactor of the Jožef Stefan Institute, for all reactions where data is available. On average, neutron reaction-specific values in the range of 1-2% were obtained for 44 elements. For 23 elements, some data are missing in the database, so the values should be obtained elsewhere. The developed approach is generally applicable to other neutron flux conditions.

  15. Proton Conduction in a Phosphonate-Based Metal-Organic Framework Mediated by Intrinsic "Free Diffusion inside a Sphere".

    PubMed

    Pili, Simona; Argent, Stephen P; Morris, Christopher G; Rought, Peter; García-Sakai, Victoria; Silverwood, Ian P; Easun, Timothy L; Li, Ming; Warren, Mark R; Murray, Claire A; Tang, Chiu C; Yang, Sihai; Schröder, Martin

    2016-05-25

    Understanding the molecular mechanism of proton conduction is crucial for the design of new materials with improved conductivity. Quasi-elastic neutron scattering (QENS) has been used to probe the mechanism of proton diffusion within a new phosphonate-based metal-organic framework (MOF) material, MFM-500(Ni). QENS suggests that the proton conductivity (4.5 × 10(-4) S/cm at 98% relative humidity and 25 °C) of MFM-500(Ni) is mediated by intrinsic "free diffusion inside a sphere", representing the first example of such a mechanism observed in MOFs. PMID:27182787

  16. A new strategy for sequential assignment of intrinsically unstructured proteins based on 15N single isotope labelling

    NASA Astrophysics Data System (ADS)

    Lopez, Juan; Ahuja, Puneet; Gerard, Melanie; Wieruszeski, Jean-Michel; Lippens, Guy

    2013-11-01

    We describe a new efficient strategy for the sequential assignment of amide resonances of a conventional 15N-1H HSQC spectrum of intrinsically unfolded proteins, based on composite NOESY-TOCSY and TOCSY-NOESY mixing times. These composite mixing times lead to a Hα-proton mediated unidirectional transfer of amide to amide proton. We have implemented the composite mixing times in an HSQC-NOESY-HSQC manner to obtain directional connectivity between amides of neighbouring residues. We experimentally determine the optimal mixing times for both transfer schemes, and demonstrate its use in the assignment for both a fragment of the neuronal tau protein and for α-synuclein.

  17. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  18. What if the Electrical Conductivity of Graphene Is Significantly Deteriorated for the Graphene-Semiconductor Composite-Based Photocatalysis?

    PubMed

    Weng, Bo; Xu, Yi-Jun

    2015-12-23

    The extraordinary electrical conductivity of graphene has been widely regarded as the bible in literature to explain the activity enhancement of graphene-semiconductor composite photocatalysts. However, from the viewpoint of an entire composite-based artificial photosynthetic system, the significant matter of photocatalytic performance of graphene-semiconductor composite system is not just a simple and only issue of excellent electrical conductivity of graphene. Herein, the intentional design of melamine resin monomers functionalized three-dimensional (3D) graphene (donated as MRGO) with significantly deteriorated electrical conductivity enables us to independently focus on studying the geometry effect of MRGO on the photocatalytic performance of graphene-semiconductor composite. By coupling semiconductor CdS with graphene, including MRGO and reduced graphene oxide (RGO), it was found that the CdS-MRGO composites exhibit much higher visible light photoactivity than CdS-RGO composites although the electrical conductivity of MRGO is remarkably much lower than that of RGO. The comparison characterizations evidence that such photoactivity enhancement is predominantly attributed to the restacking-inhibited 3D architectural morphology of MRGO, by which the synergistic effects of boosted separation and transportation of photogenerated charge carriers and increased adsorption capacity can be achieved. Our work highlights that the significant matter of photocatalytic performance of graphene-semiconductor composite is not a simple issue on how to harness the electrical conductivity of graphene but the rational ensemble design of graphene-semiconductor composite, which includes the integrative optimization of geometrical and electrical factors of individual component and the interface composition. PMID:26624808

  19. What if the Electrical Conductivity of Graphene Is Significantly Deteriorated for the Graphene-Semiconductor Composite-Based Photocatalysis?

    PubMed

    Weng, Bo; Xu, Yi-Jun

    2015-12-23

    The extraordinary electrical conductivity of graphene has been widely regarded as the bible in literature to explain the activity enhancement of graphene-semiconductor composite photocatalysts. However, from the viewpoint of an entire composite-based artificial photosynthetic system, the significant matter of photocatalytic performance of graphene-semiconductor composite system is not just a simple and only issue of excellent electrical conductivity of graphene. Herein, the intentional design of melamine resin monomers functionalized three-dimensional (3D) graphene (donated as MRGO) with significantly deteriorated electrical conductivity enables us to independently focus on studying the geometry effect of MRGO on the photocatalytic performance of graphene-semiconductor composite. By coupling semiconductor CdS with graphene, including MRGO and reduced graphene oxide (RGO), it was found that the CdS-MRGO composites exhibit much higher visible light photoactivity than CdS-RGO composites although the electrical conductivity of MRGO is remarkably much lower than that of RGO. The comparison characterizations evidence that such photoactivity enhancement is predominantly attributed to the restacking-inhibited 3D architectural morphology of MRGO, by which the synergistic effects of boosted separation and transportation of photogenerated charge carriers and increased adsorption capacity can be achieved. Our work highlights that the significant matter of photocatalytic performance of graphene-semiconductor composite is not a simple issue on how to harness the electrical conductivity of graphene but the rational ensemble design of graphene-semiconductor composite, which includes the integrative optimization of geometrical and electrical factors of individual component and the interface composition.

  20. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  1. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  2. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    NASA Astrophysics Data System (ADS)

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-05-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities.

  3. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors.

    PubMed

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  4. Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1-xO

    NASA Astrophysics Data System (ADS)

    Hou, Yaonan; Mei, Zengxia; Du, Xiaolong

    2014-07-01

    It is indispensable to develop wide-band-gap based ultraviolet (UV) photodetectors (PDs), which are one of the basic building blocks of solid state UV optoelectronic devices. In the last two decades, we have witnessed the renaissance of ZnO as a wide-band-gap semiconductor and an enormous development of ZnO-based UV PDs as a result of its superb optical and electronic properties. Since the first demonstration, a great variety of UV PDs based on ZnO and its related materials have been proposed and demonstrated. These PDs, with diverse device geometries, exhibit either high performance or multiple functions, reflecting a state-of-the-art technology of UV optoelectronics. In this review, we study the latest progress of UV PDs made on ZnO and MgxZn1-xO, which is a representative alloy of ZnO for band-gap engineering techniques. The discussion focuses on the device performance and the behind device physics according to the architecture of UV PDs.

  5. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    PubMed Central

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  6. Cation-dependent intrinsic electrical conductivity in isostructural tetrathiafulvalene-based microporous metal-organic frameworks.

    PubMed

    Park, Sarah S; Hontz, Eric R; Sun, Lei; Hendon, Christopher H; Walsh, Aron; Van Voorhis, Troy; Dincă, Mircea

    2015-02-11

    Isostructural metal-organic frameworks (MOFs) M2(TTFTB) (M = Mn, Co, Zn, and Cd; H4TTFTB = tetrathiafulvalene tetrabenzoate) exhibit a striking correlation between their single-crystal conductivities and the shortest S···S interaction defined by neighboring TTF cores, which inversely correlates with the ionic radius of the metal ions. The larger cations cause a pinching of the S···S contact, which is responsible for better orbital overlap between pz orbitals on neighboring S and C atoms. Density functional theory calculations show that these orbitals are critically involved in the valence band of these materials, such that modulation of the S···S distance has an important effect on band dispersion and, implicitly, on the conductivity. The Cd analogue, with the largest cation and shortest S···S contact, shows the largest electrical conductivity, σ = 2.86 (±0.53) × 10(-4) S/cm, which is also among the highest in microporous MOFs. These results describe the first demonstration of tunable intrinsic electrical conductivity in this class of materials and serve as a blueprint for controlling charge transport in MOFs with π-stacked motifs.

  7. Exploring the intrinsic differences among breast tumor subtypes defined using immunohistochemistry markers based on the decision tree

    PubMed Central

    Li, Yang; Tang, Xu-Qing; Bai, Zhonghu; Dai, Xiaofeng

    2016-01-01

    Exploring the intrinsic differences among breast cancer subtypes is of crucial importance for precise diagnosis and therapeutic decision-making in diseases of high heterogeneity. The subtypes defined with several layers of information are related but not consistent, especially using immunohistochemistry markers and gene expression profiling. Here, we explored the intrinsic differences among the subtypes defined by the estrogen receptor, progesterone receptor and human epidermal growth factor receptor 2 based on the decision tree. We identified 30 mRNAs and 7 miRNAs differentially expressed along the tree’s branches. The final signature panel contained 30 mRNAs, whose performance was validated using two public datasets based on 3 well-known classifiers. The network and pathway analysis were explored for feature genes, from which key molecules including FOXQ1 and SFRP1 were revealed to be densely connected with other molecules and participate in the validated metabolic pathways. Our study uncovered the differences among the four IHC-defined breast tumor subtypes at the mRNA and miRNA levels, presented a novel signature for breast tumor subtyping, and identified several key molecules potentially driving the heterogeneity of such tumors. The results help us further understand breast tumor heterogeneity, which could be availed in clinics. PMID:27786176

  8. Defect chemistry and defect engineering of TiO2-based semiconductors for solar energy conversion.

    PubMed

    Nowotny, Janusz; Alim, Mohammad Abdul; Bak, Tadeusz; Idris, Mohammad Asri; Ionescu, Mihail; Prince, Kathryn; Sahdan, Mohd Zainizan; Sopian, Kamaruzzaman; Mat Teridi, Mohd Asri; Sigmund, Wolfgang

    2015-12-01

    This tutorial review considers defect chemistry of TiO2 and its solid solutions as well as defect-related properties associated with solar-to-chemical energy conversion, such as Fermi level, bandgap, charge transport and surface active sites. Defect disorder is discussed in terms of defect reactions and the related charge compensation. Defect equilibria are used in derivation of defect diagrams showing the effect of oxygen activity and temperature on the concentration of both ionic and electronic defects. These defect diagrams may be used for imposition of desired semiconducting properties that are needed to maximize the performance of TiO2-based photoelectrodes for the generation of solar hydrogen fuel using photo electrochemical cells (PECs) and photocatalysts for water purification. The performance of the TiO2-based semiconductors is considered in terms of the key performance-related properties (KPPs) that are defect related. It is shown that defect engineering may be applied for optimization of the KPPs in order to achieve optimum performance. PMID:26446476

  9. Earth-abundant cocatalysts for semiconductor-based photocatalytic water splitting.

    PubMed

    Ran, Jingrun; Zhang, Jun; Yu, Jiaguo; Jaroniec, Mietek; Qiao, Shi Zhang

    2014-11-21

    Photocatalytic water splitting represents a promising strategy for clean, low-cost, and environmental-friendly production of H2 by utilizing solar energy. There are three crucial steps for the photocatalytic water splitting reaction: solar light harvesting, charge separation and transportation, and the catalytic H2 and O2 evolution reactions. While significant achievement has been made in optimizing the first two steps in the photocatalytic process, much less efforts have been put into improving the efficiency of the third step, which demands the utilization of cocatalysts. To date, cocatalysts based on rare and expensive noble metals are still required for achieving reasonable activity in most semiconductor-based photocatalytic systems, which seriously restricts their large-scale application. Therefore, seeking cheap, earth-abundant and high-performance cocatalysts is indispensable to achieve cost-effective and highly efficient photocatalytic water splitting. This review for the first time summarizes all the developed earth-abundant cocatalysts for photocatalytic H2- and O2-production half reactions as well as overall water splitting. The roles and functional mechanism of the cocatalysts are discussed in detail. Finally, this review is concluded with a summary, and remarks on some challenges and perspectives in this emerging area of research.

  10. First-Principles Study on Electronic Structure of TiO2-Based Dilute Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Kizaki, Hidetoshi; Toyoda, Masayuki; Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2008-03-01

    We investigate the electronic structure in rutile-TiO2-based dilute magnetic semiconductors (DMS) within self-interaction- corrected local density approximation (SIC-LDA). These results are compared with those calculated within standard LDA. Although the calculated band-gap energy and energetic position of Ti 3d bands are different in the LDA and the SIC-LDA, half-metallic density of states is predicted in transition- metal-doped TiO2 for both methods. While the LDA calculations predict high-spin state only for Fe-doped one, in the SIC-LDA calculations high-spin state is realized in V-, Cr- and Mn-doped one and low-spin state is realized in Fe- and Co- doped one. However, the absorption and soft x-ray magnetic circular dichroism measurements in (Ti0.97, Co0.03)O2-δ indicate the Co^2+ high-spin state in the D2h-symmetry crystal field at the Ti site. These experimental results do not agree with our calculated results. We will discuss the origin of the discrepancy between the theoretical predictions and the experimental observations. In addition, we will discuss the ferromagnetism in TiO2-based DMS.

  11. High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Meneghesso, Gaudenzio; Meneghini, Matteo; Silvestri, Riccardo; Vanmeerbeek, Piet; Moens, Peter; Zanoni, Enrico

    2016-01-01

    This paper presents an analysis of the high voltage trapping processes that take place in high-electron mobility transistors based on GaN, with a metal-insulator-semiconductor (MIS) structure. The study is based on combined pulsed and transient measurements, carried out with trapping voltages in the range from 50 to 500 V. The results indicate that: (i) dynamic Ron is maximum for trapping voltages between 200 and 300 V, and decreases for higher voltage levels; (ii) Ron-transient measurements reveal the presence of a dominant trap with activation energy Ea1 = 0.93 eV and of a second trap with activation energy equal to Ea2 = 0.61 eV; (iii) the deep level transient spectroscopy (DLTS) signal associated to trap Ea1 is completely suppressed for high trapping voltages (VDS = 500 V). The results are interpreted by considering that the trap Ea1 is located in the buffer, and originates from CN defects. The exposure to high drain voltages may favor the depletion of such traps, due to a field-assisted de-trapping process or to the presence of vertical leakage paths.

  12. A 6 GW nanosecond solid-state generator based on semiconductor opening switch.

    PubMed

    Gusev, A I; Pedos, M S; Rukin, S N; Timoshenkov, S P; Tsyranov, S N

    2015-11-01

    In this paper, a nanosecond all solid-state generator providing peak power of up to 6 GW, output voltage of 500-900 kV, pulse length (full width at half maximum) of ∼7 ns across external loads of 40-100 Ω, and pulse repetition frequency up to 1 kHz in burst operation mode is described. The output pulse is generated by a semiconductor opening switch (SOS). A new SOS pumping circuit based on a double forming line (DFL) is proposed and its implementation described. As compared with a lumped capacitors-based pumping circuit, the DFL allows minimization of the inductance and stray capacitance of the reverse pumping circuit, and thus, an increase in the SOS cutoff current amplitude and generator output peak power as a whole. The pumping circuit provides a reverse current increasing through the SOS up to 14 kA within ∼12 ns. The SOS cuts off the current in ∼2 ns; the current cutoff rate reaches 7 kA/ns. The SOS braking power (the product of peak voltage and cutoff current) for an external load above 100 Ω is 13 GW.

  13. A 6 GW nanosecond solid-state generator based on semiconductor opening switch

    NASA Astrophysics Data System (ADS)

    Gusev, A. I.; Pedos, M. S.; Rukin, S. N.; Timoshenkov, S. P.; Tsyranov, S. N.

    2015-11-01

    In this paper, a nanosecond all solid-state generator providing peak power of up to 6 GW, output voltage of 500-900 kV, pulse length (full width at half maximum) of ˜7 ns across external loads of 40-100 Ω, and pulse repetition frequency up to 1 kHz in burst operation mode is described. The output pulse is generated by a semiconductor opening switch (SOS). A new SOS pumping circuit based on a double forming line (DFL) is proposed and its implementation described. As compared with a lumped capacitors-based pumping circuit, the DFL allows minimization of the inductance and stray capacitance of the reverse pumping circuit, and thus, an increase in the SOS cutoff current amplitude and generator output peak power as a whole. The pumping circuit provides a reverse current increasing through the SOS up to 14 kA within ˜12 ns. The SOS cuts off the current in ˜2 ns; the current cutoff rate reaches 7 kA/ns. The SOS braking power (the product of peak voltage and cutoff current) for an external load above 100 Ω is 13 GW.

  14. Stabilization of Ferromagnetic States by Electron Doping in ZnO-Based Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2001-03-01

    In order to investigate functionality of ZnO as a diluted magnetic semiconductor (DMS), we had studied the magnetism in ZnO doped with 3d transition metal atoms (TM) and showed that it was also a candidate for a new functional magnetic material [1]. In this paper, we develop our previous work and give detailed materials design with ZnO-based DMS based on ab initio calculations. The electronic structure of a TM-doped ZnO was calculated within the local density approximation by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. Total energies of Zn_1-xTM^\\uparrow_xO and Zn_1-xTM^\\uparrow_x/2TM^downarrow_x/2O, where up and down arrows mean the directions of respective atomic magnetic moments, were compared and appearance of the ferromagnetism was discussed. Effects of carrier doping to these systems were also considered. It was found that their magnetic states were controllable by changing the carrier density. In particular, ferromagnetic states were stabilized by electron doping in the case of Fe, Co or Ni doped ZnO. From the point of practical applications, it is favorable feature to realize high Curie temperature ferromagnet, because n-type ZnO is easily available. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555.

  15. The intrinsic periodic fluctuation of forest: a theoretical model based on diffusion equation

    NASA Astrophysics Data System (ADS)

    Zhou, J.; Lin, G., Sr.

    2015-12-01

    Most forest dynamic models predict the stable state of size structure as well as the total basal area and biomass in mature forest, the variation of forest stands are mainly driven by environmental factors after the equilibrium has been reached. However, although the predicted power-law size-frequency distribution does exist in analysis of many forest inventory data sets, the estimated distribution exponents are always shifting between -2 and -4, and has a positive correlation with the mean value of DBH. This regular pattern can not be explained by the effects of stochastic disturbances on forest stands. Here, we adopted the partial differential equation (PDE) approach to deduce the systematic behavior of an ideal forest, by solving the diffusion equation under the restricted condition of invariable resource occupation, a periodic solution was gotten to meet the variable performance of forest size structure while the former models with stable performance were just a special case of the periodic solution when the fluctuation frequency equals zero. In our results, the number of individuals in each size class was the function of individual growth rate(G), mortality(M), size(D) and time(T), by borrowing the conclusion of allometric theory on these parameters, the results perfectly reflected the observed "exponent-mean DBH" relationship and also gave a logically complete description to the time varying form of forest size-frequency distribution. Our model implies that the total biomass of a forest can never reach a stable equilibrium state even in the absence of disturbances and climate regime shift, we propose the idea of intrinsic fluctuation property of forest and hope to provide a new perspective on forest dynamics and carbon cycle research.

  16. A FPGA-based Measurement System for Nonvolatile Semiconductor Memory Characterization

    NASA Astrophysics Data System (ADS)

    Bu, Jiankang; White, Marvin

    2002-03-01

    Low voltage, long retention, high density SONOS nonvolatile semiconductor memory (NVSM) devices are ideally suited for PCMCIA, FLASH and 'smart' cards. The SONOS memory transistor requires characterization with an accurate, rapid measurement system with minimum disturbance to the device. The FPGA-based measurement system includes three parts: 1) a pattern generator implemented with XILINX FPGAs and corresponding software, 2) a high-speed, constant-current, threshold voltage detection circuit, 3) and a data evaluation program, implemented with a LABVIEW program. Fig. 1 shows the general block diagram of the FPGA-based measurement system. The function generator is designed and simulated with XILINX Foundation Software. Under the control of the specific erase/write/read pulses, the analog detect circuit applies operational modes to the SONOS device under test (DUT) and determines the change of the memory-state of the SONOS nonvolatile memory transistor. The TEK460 digitizes the analog threshold voltage output and sends to the PC computer. The data is filtered and averaged with a LABVIEWTM program running on the PC computer and displayed on the monitor in real time. We have implemented the pattern generator with XILINX FPGAs. Fig. 2 shows the block diagram of the pattern generator. We realized the logic control by a method of state machine design. Fig. 3 shows a small part of the state machine. The flexibility of the FPGAs enhances the capabilities of this system and allows measurement variations without hardware changes. The characterization of the nonvolatile memory transistor device under test (DUT), as function of programming voltage and time, is achieved by a high-speed, constant-current threshold voltage detection circuit. The analog detection circuit incorporating fast analog switches controlled digitally with the FPGAs. The schematic circuit diagram is shown in Fig. 4. The various operational modes for the DUT are realized with control signals applied to the

  17. Continuously tunable Yb:KYW femtosecond oscillator based on a tunable highly dispersive semiconductor mirror.

    PubMed

    Wnuk, P; Wasylczyk, P; Zinkiewicz, Ł; Dems, M; Hejduk, K; Regiński, K; Wójcik-Jedlińska, A; Jasik, A

    2014-07-28

    The optimized nonuniform growth process was used to achieve spatially dependent reflectivity and dispersions characteristics in a highly dispersive semiconductor mirror. The mirror, together with a semiconductor saturable absorber mirror (SESAM), was used to demonstrate a tunable femtosecond Yb:KYW oscillator. In the passive modelocking regime the laser could be continuously tuned over 3.5 nm spectral band around 1032 nm with high resolution, maintaining the average output power above 140 mW. PMID:25089448

  18. Photochemical deposition of cobalt-based oxygen evolving catalyst on a semiconductor photoanode for solar oxygen production

    PubMed Central

    Steinmiller, Ellen M. P.; Choi, Kyoung-Shin

    2009-01-01

    This study describes the photochemical deposition of Co-based oxygen evolution catalysts on a semiconductor photoanode for use in solar oxygen evolution. In the photodeposition process, electron-hole pairs are generated in a semiconductor upon illumination and the photogenerated holes are used to oxidize Co2+ ions to Co3+ ions, resulting in the precipitation of Co3+-based catalysts on the semiconductor surface. Both photodeposition of the catalyst and solar O2 evolution are photo-oxidation reactions using the photogenerated holes. Therefore, photodeposition provides an efficient way to couple oxygen evolution catalysts with photoanodes by naturally placing catalysts at the locations where the holes are most readily available for solar O2 evolution. In this study Co-based catalysts were photochemically deposited as 10–30 nm nanoparticles on the ZnO surface. The comparison of the photocurrent-voltage characteristics of the ZnO electrodes with and without the presence of the Co-based catalyst demonstrated that the catalyst generally enhanced the anodic photocurrent of the ZnO electrode with its effect more pronounced when the band bending is less significant. The presence of Co-based catalyst on the ZnO photoanode also shifted the onset potential of the photocurrent by 0.23 V to the negative direction, closer to the flat band potential. These results demonstrated that the cobalt-based catalyst can efficiently use the photogenerated holes in ZnO to enhance solar O2 evolution. The photodeposition method described in this study can be used as a general route to deposit the Co-based catalysts on any semiconductor electrode with a valence band edge located at a more positive potential than the oxidation potential of Co2+ ions. PMID:19934060

  19. Evaluating aquatic invertebrate vulnerability to insecticides based on intrinsic sensitivity, biological traits, and toxic mode of action.

    PubMed

    Rico, Andreu; Van den Brink, Paul J

    2015-08-01

    In the present study, the authors evaluated the vulnerability of aquatic invertebrates to insecticides based on their intrinsic sensitivity and their population-level recovery potential. The relative sensitivity of invertebrates to 5 different classes of insecticides was calculated at the genus, family, and order levels using the acute toxicity data available in the US Environmental Protection Agency ECOTOX database. Biological trait information was linked to the calculated relative sensitivity to evaluate correlations between traits and sensitivity and to calculate a vulnerability index, which combines intrinsic sensitivity and traits describing the recovery potential of populations partially exposed to insecticides (e.g., voltinism, flying strength, occurrence in drift). The analysis shows that the relative sensitivity of arthropods depends on the insecticide mode of action. Traits such as degree of sclerotization, size, and respiration type showed good correlation to sensitivity and can be used to make predictions for invertebrate taxa without a priori sensitivity knowledge. The vulnerability analysis revealed that some of the Ephemeroptera, Plecoptera, and Trichoptera taxa were vulnerable to all insecticide classes and indicated that particular gastropod and bivalve species were potentially vulnerable. Microcrustaceans (e.g., daphnids, copepods) showed low potential vulnerability, particularly in lentic ecosystems. The methods described in the present study can be used for the selection of focal species to be included as part of ecological scenarios and higher tier risk assessments.

  20. Electromagnetic metamaterial-inspired band gap and perfect transmission in semiconductor and graphene-based electronic and photonic structures

    NASA Astrophysics Data System (ADS)

    Mahdy, M. R. C.; Al Sayem, Ayed; Shahriar, Arif; Shawon, Jubayer; Al-Quaderi, Golam Dastegir; Jahangir, Ifat; Matin, M. A.

    2016-04-01

    In this article, at first we propose a unified and compact classification of single negative electromagnetic metamaterial-based perfect transmission unit cells. The classes are named as: type-A, -B and -C unit cells. Then based on the classification, we have extended these ideas in semiconductor and graphene regimes. For type-A: Based on the idea of electromagnetic Spatial Average Single Negative bandgap, novel bandgap structures have been proposed for electron transmission in semiconductor heterostructures. For type-B: with dielectric-graphene-dielectric structure, almost all angle transparency is achieved for both polarizations of electromagnetic wave in the terahertz frequency range instead of the conventional transparency in the microwave frequency range. Finally the application of the gated dielectric-graphene-dielectric has been demonstrated for the modulation and switching purpose.

  1. Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Woo, Alex C. (Technical Monitor)

    1999-01-01

    In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum

  2. Materials design of dilute magnetic semiconductors based on the control of spinodal decomposition

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori

    2010-03-01

    Recently, spinodal decomposition phenomena attract much attention in the fabrication of dilute magnetic semiconductors (DMS). Many experimental results indicate that the magnetic properties of DMS are strongly affected by the occurrence of spinodal decomposition [1], thus people are now interested in controlling the magnetic properties of DMS by tuning the spinodal decomposition. In this talk, I will discuss spinodal decomposition in DMS based on the first-principles calculation. The electronic structure of DMS is calculated by using the Korringa-Kohn-Rostoker coherent potential approximation method. Based on the calculated mixing energy I will discuss phase diagrams of DMS systems and their chemical trends. By using the calculated chemical pair interactions between magnetic impurities in DMS, the self-organization of nano-structures in DMS of the nano-structures are simulated by using the Monte Carlo method. The simulation results indicate that we can control super-paramagnetic blocking temperature by optimizing the size of the nano-structures by changing the crystal growth condition [2]. Next, I will propose co-doping method to control solubility limit of magnetic impurities in DMS. From the total energy calculations, it is shown that the solubility of magnetic impurities is strongly enhanced under the existence of interstitial donors [2]. However, due to the compensation of holes by the co-dopants, the ferromagnetism is suppressed. Based on the kinetic Monte Carlo simulations, we propose low temperature annealing method to remove interstitial co-dopants for recovering the ferromagnetism. By combining the co-doping and the low temperature annealing, we can fabricate DMS with high concentration of magnetic impurities which should show high-Tc. This work is based on the collaboration with H. Fujii, L. Bergqvist, P. H. Dederichs and H. Katayama-Yoshida.[4pt] [1] A. Bonanni, Semicond. Sci. Technol. 22 (2007) R41.[0pt] [2] K. Sato et al., Rev. Mod. Phys. Phys

  3. Hot-electron-based solar energy conversion with metal-semiconductor nanodiodes.

    PubMed

    Lee, Young Keun; Lee, Hyosun; Lee, Changhwan; Hwang, Euyheon; Park, Jeong Young

    2016-06-29

    Energy dissipation at metal surfaces or interfaces between a metal and a dielectric generally results from elementary excitations, including phonons and electronic excitation, once external energy is deposited to the surface/interface during exothermic chemical processes or an electromagnetic wave incident. In this paper, we outline recent research activities to develop energy conversion devices based on hot electrons. We found that photon energy can be directly converted to hot electrons and that hot electrons flow through the interface of metal-semiconductor nanodiodes where a Schottky barrier is formed and the energy barrier is much lower than the work function of the metal. The detection of hot electron flow can be successfully measured using the photocurrent; we measured the photoyield of photoemission with incident photons-to-current conversion efficiency (IPCE). We also show that surface plasmons (i.e. the collective oscillation of conduction band electrons induced by interaction with an electromagnetic field) are excited on a rough metal surface and subsequently decay into secondary electrons, which gives rise to enhancement of the IPCE. Furthermore, the unique optical behavior of surface plasmons can be coupled with dye molecules, suggesting the possibility for producing additional channels for hot electron generation. PMID:27168177

  4. Multi-immunosensors based on electrolite-insulator-semiconductor structures for determination of some herbicides

    NASA Astrophysics Data System (ADS)

    Starodub, Nickolaj F.; Starodub, Valentyna M.; Krivenchuk, Vladimir E.; Shapovalenko, Valentyna F.

    2002-02-01

    New type of the multi-immune sensor was elaborated. It is based on electrolyte-insulator-semiconductors structures and intended for determination of such herbicides as simazine, atrazine and 2,4-D. The specific antibodies were immobilized on nitrocellulose disks, which were placed in measuring cells. The analysis was fulfilled by sequential saturation of antibodies, left unbound after their exposure to native herbicide in investigated sample, with labelled herbicide. If horse radish peroxidase (HRP) was used as label the sensitivity of this multi-immune sensor was about 5 and 1.25 (mu) g/L for simazine and 2,4-D, respectively. At the changing of HRP by (beta) -glucose oxidase the sensitivity of analysis of these herbicides increased approximately in 5 times. The linear plots of the registered concentrations were in the range of 1,0-150,0 and 0,25-150,0 ng/mL for simazine and 2,4-D respectively. It was recommended to use the developed immune sensor for wide screening of herbicides in environment. The ways for increasing of its sensitivity were proposed.

  5. Hot-electron-based solar energy conversion with metal-semiconductor nanodiodes.

    PubMed

    Lee, Young Keun; Lee, Hyosun; Lee, Changhwan; Hwang, Euyheon; Park, Jeong Young

    2016-06-29

    Energy dissipation at metal surfaces or interfaces between a metal and a dielectric generally results from elementary excitations, including phonons and electronic excitation, once external energy is deposited to the surface/interface during exothermic chemical processes or an electromagnetic wave incident. In this paper, we outline recent research activities to develop energy conversion devices based on hot electrons. We found that photon energy can be directly converted to hot electrons and that hot electrons flow through the interface of metal-semiconductor nanodiodes where a Schottky barrier is formed and the energy barrier is much lower than the work function of the metal. The detection of hot electron flow can be successfully measured using the photocurrent; we measured the photoyield of photoemission with incident photons-to-current conversion efficiency (IPCE). We also show that surface plasmons (i.e. the collective oscillation of conduction band electrons induced by interaction with an electromagnetic field) are excited on a rough metal surface and subsequently decay into secondary electrons, which gives rise to enhancement of the IPCE. Furthermore, the unique optical behavior of surface plasmons can be coupled with dye molecules, suggesting the possibility for producing additional channels for hot electron generation.

  6. Semiconductor and carbon-based fluorescent nanodots: the need for consistency.

    PubMed

    Cayuela, A; Soriano, M L; Carrillo-Carrión, C; Valcárcel, M

    2016-01-25

    Fluorescent nanodots have become increasingly prevalent in a wide variety of applications with special interest in analytical and biomedical fields. The present overview focuses on three main aspects: (i) a systematic description and reasonable classification of the most relevant types of fluorescent nanodots according to their nature, quantum confinement and crystalline structure is provided, starting with a clear distinction between semiconductor and carbon-based dots (graphene quantum dots, carbon quantum dots and carbon nanodots). A new set of abbreviations and definitions for them to avoid contradictions found in literature is also proposed; (ii) a rational classification allows the establishment of clear-cut differences and similarities among them. From a basic point of view, the origins of the photoluminescence of the different nanodots are also established, which is a relevant contribution of this overview. Additionally, the most outstanding similarities and differences in a great variety of criteria (i.e. year of discovery, synthesis, the physico-chemical characteristics like structure, nature, shape, size, quantum confinement, toxicity and solubility, the optical characteristics including the quantum yield and lifetime, limitations, applications as well as the evolution of publications) are thoroughly outlined; and (iii) finally, the promising future of fluorescent nanodots in both analytical and biomedical fields is discussed using selected examples of relevant applications.

  7. PRECISION CLEANING OF SEMICONDUCTOR SURFACES USING CARBON DIOXIDE-BASED FLUIDS

    SciTech Connect

    J. RUBIN; L. SIVILS; A. BUSNAINA

    1999-07-01

    The Los Alamos National Laboratory, on behalf of the Hewlett-Packard Company, is conducting tests of a closed-loop CO{sub 2}-based supercritical fluid process, known as Supercritical CO{sub 2} Resist Remover (SCORR). We have shown that this treatment process is effective in removing hard-baked, ion-implanted photoresists, and appears to be fully compatible with metallization systems. We are now performing experiments on production wafers to assess not only photoresist removal, but also residual surface contamination due to particulate and trace metals. Dense-phase (liquid or supercritical) CO{sub 2}, since it is non-polar, acts like an organic solvent and therefore has an inherently high volubility for organic compounds such as oils and greases. Also, dense CO{sub 2} has a low-viscosity and a low dielectric constant. Finally, CO{sub 2} in the liquid and supercritical fluid states can solubilize metal completing agents and surfactants. This combination of properties has interesting implications for the removal not only of organic films, but also trace metals and inorganic particulate. In this paper we discuss the possibility of using CO{sub 2} as a precision-cleaning solvent, with particular emphasis on semiconductor surfaces.

  8. Vibronic properties of organic semiconductors based on phthalocyanine complexes with asymmetrically distributed electron density

    SciTech Connect

    Belogorokhov, I. A.; Martishov, M. N.; Mamichev, D. A.; Dronov, M. A.; Pushkarev, V. E.; Ryabchikov, Yu. V.; Forsh, P. A.; Tomilova, L. G.; Khokhlov, D. R.

    2010-06-15

    This study is concerned with the optical properties of organic semiconductors based on lanthanide (III) biphthalocyanine and triphthalocyanine complexes with asymmetrically distributed electron density. The {sup Cl}PcLu{sup tBu}Pc biphthalocyanine and {sup Cl}PcEu{sup Bu}PcLu{sup Bu}Pc triphthalocyanine solid films ({sup Cl}Pc = 2, 3, 9, 10, 16, 17, 23, 24-octachlorophthalocyaninate, {sup tBu}Pc = 2(3), 9(10), 16(17), 23(24)-tetra- tretbutylphthalocyani-nate, {sup Bu}Pc = 2, 3, 9, 10, 16, 17, 23, 24-octabutylphthalo cyaninate) are fabricated, and their transmittance spectra in the middle infrared region are studied. Analysis of the transmittance spectra shows that the addition of complexity to phthalocyanine molecules yields some changes in the spectra. Specifically, the isoindole group can exhibit vibronic properties in the form of four absorption lines in the range 1400-1450 cm{sup -1}. New absorption lines that may be due to chlorine-carbon bonds are observed in the far-infrared region.

  9. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    PubMed Central

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-01-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis. PMID:27404510

  10. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting.

    PubMed

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-01-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis. PMID:27404510

  11. Hot-electron-based solar energy conversion with metal–semiconductor nanodiodes

    NASA Astrophysics Data System (ADS)

    Lee, Young Keun; Lee, Hyosun; Lee, Changhwan; Hwang, Euyheon; Park, Jeong Young

    2016-06-01

    Energy dissipation at metal surfaces or interfaces between a metal and a dielectric generally results from elementary excitations, including phonons and electronic excitation, once external energy is deposited to the surface/interface during exothermic chemical processes or an electromagnetic wave incident. In this paper, we outline recent research activities to develop energy conversion devices based on hot electrons. We found that photon energy can be directly converted to hot electrons and that hot electrons flow through the interface of metal–semiconductor nanodiodes where a Schottky barrier is formed and the energy barrier is much lower than the work function of the metal. The detection of hot electron flow can be successfully measured using the photocurrent; we measured the photoyield of photoemission with incident photons-to-current conversion efficiency (IPCE). We also show that surface plasmons (i.e. the collective oscillation of conduction band electrons induced by interaction with an electromagnetic field) are excited on a rough metal surface and subsequently decay into secondary electrons, which gives rise to enhancement of the IPCE. Furthermore, the unique optical behavior of surface plasmons can be coupled with dye molecules, suggesting the possibility for producing additional channels for hot electron generation.

  12. Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter.

    PubMed

    Sridhar, Manoj; Xu, Dongyan; Kang, Yuejun; Hmelo, Anthony B; Feldman, Leonard C; Li, Dongqing; Li, Deyu

    2008-05-15

    We report the detailed characterization of an ultrasensitive microfluidic device used to detect the translocation of small particles through a sensing microchannel. The device connects a fluidic circuit to the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET) and detects particles by monitoring the MOSFET drain current modulation instead of the modulation in the ionic current through the sensing channel. The minimum volume ratio of the particle to the sensing channel detected is 0.006%, which is about ten times smaller than the lowest detected volume ratio previously reported in the literature. This volume ratio is detected at a noise level of about 0.6% of the baseline MOSFET drain current, clearly showing the amplification effects from the fluidic circuits and the MOSFETs. We characterize the device sensitivity as a function of the MOSFET gate potential and show that its sensitivity is higher when the MOSFET is operating below its threshold gate voltage than when it is operating above the threshold voltage. In addition, we demonstrate that the device sensitivity linearly increases with the applied electrical bias across the fluidic circuit. Finally, we show that polystyrene beads and glass beads with similar sizes can be distinguished from each other based on their different translocation times, and the size distribution of microbeads can be obtained with accuracy comparable to that of direct scanning electron microscopy measurements. PMID:19479001

  13. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    NASA Astrophysics Data System (ADS)

    Hoidn, Oliver R.; Seidler, Gerald T.

    2015-08-01

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2-6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ˜20% quantum efficiency at 2.6 keV with ˜190 eV resolution and a 100 kHz maximum detection rate. The detector platform's useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  14. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    SciTech Connect

    Hoidn, Oliver R.; Seidler, Gerald T.

    2015-08-15

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  15. A next generation semiconductor based sequencing approach for the identification of meat species in DNA mixtures.

    PubMed

    Bertolini, Francesca; Ghionda, Marco Ciro; D'Alessandro, Enrico; Geraci, Claudia; Chiofalo, Vincenzo; Fontanesi, Luca

    2015-01-01

    The identification of the species of origin of meat and meat products is an important issue to prevent and detect frauds that might have economic, ethical and health implications. In this paper we evaluated the potential of the next generation semiconductor based sequencing technology (Ion Torrent Personal Genome Machine) for the identification of DNA from meat species (pig, horse, cattle, sheep, rabbit, chicken, turkey, pheasant, duck, goose and pigeon) as well as from human and rat in DNA mixtures through the sequencing of PCR products obtained from different couples of universal primers that amplify 12S and 16S rRNA mitochondrial DNA genes. Six libraries were produced including PCR products obtained separately from 13 species or from DNA mixtures containing DNA from all species or only avian or only mammalian species at equimolar concentration or at 1:10 or 1:50 ratios for pig and horse DNA. Sequencing obtained a total of 33,294,511 called nucleotides of which 29,109,688 with Q20 (87.43%) in a total of 215,944 reads. Different alignment algorithms were used to assign the species based on sequence data. Error rate calculated after confirmation of the obtained sequences by Sanger sequencing ranged from 0.0003 to 0.02 for the different species. Correlation about the number of reads per species between different libraries was high for mammalian species (0.97) and lower for avian species (0.70). PCR competition limited the efficiency of amplification and sequencing for avian species for some primer pairs. Detection of low level of pig and horse DNA was possible with reads obtained from different primer pairs. The sequencing of the products obtained from different universal PCR primers could be a useful strategy to overcome potential problems of amplification. Based on these results, the Ion Torrent technology can be applied for the identification of meat species in DNA mixtures.

  16. Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

  17. Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

    NASA Technical Reports Server (NTRS)

    Li, C.; Ban, H.; Lin, B.; Scripa, R. N.; Su, C.-H.; Lehoczky, S. L.

    2004-01-01

    The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

  18. Ambipolar organic field-effect transistors based on a low band gap semiconductor with balanced hole and electron mobilities

    NASA Astrophysics Data System (ADS)

    Chikamatsu, Masayuki; Mikami, Takefumi; Chisaka, Jiro; Yoshida, Yuji; Azumi, Reiko; Yase, Kiyoshi; Shimizu, Akihiro; Kubo, Takashi; Morita, Yasushi; Nakasuji, Kazuhiro

    2007-07-01

    The authors have demonstrated the thin-film properties and the ambipolar transport of a delocalized singlet biradical hydrocarbon with two phenalenyl radical moieties (Ph2-IDPL). The organic field-effect transistors (OFETs) based on Ph2-IDPL exhibit ambipolar transport with balanced hole and electron mobilities in the order of 10-3cm2/Vs. The Ph2-IDPL film is an organic semiconductor with a low band gap of 0.8eV and has small injection barriers from gold electrodes to both the highest occupied molecular orbital and the lowest unoccupied molecular orbital. A complementary metal-oxide-semiconductor-like inverter using two identical Ph2-IDPL based ambipolar OFETs shows a sharp inversion of the input voltage with high gain.

  19. Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

    NASA Astrophysics Data System (ADS)

    Wang, Shaoqing; Jin, Zhi; Muhammad, Asif; Peng, Songang; Huang, Xinnan; Zhang, Dayong; Shi, Jingyuan

    2016-10-01

    The most common method of mobility extraction for graphene field-effect transistors is proposed by Kim. Kim’s method assumes a constant mobility independent of carrier density and gets the mobility by fitting the transfer curves. However, carrier mobility changes with the carrier density, leading to the inaccuracy of Kim’s method. In our paper, a new and more accurate method is proposed to extract mobility by fitting the output curves at a constant gate voltage. The output curves are fitted using several kinds of current-voltage models. Besides the models in the literature, we present a modified model, which takes into account not only the quantum capacitance, contact resistance, but also a modified drift velocity-field relationship. Comparing with the other models, this new model can fit better with our experimental data. The dependence of carrier intrinsic mobility on carrier density is obtained based on this model.

  20. Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices

    NASA Astrophysics Data System (ADS)

    Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

    2015-07-01

    A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules.

  1. Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices

    PubMed Central

    Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

    2015-01-01

    A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules. PMID:26207723

  2. Semiconductor adsorption sensors based on nanosized Pt/SnO2 materials and their sensitivity to methane

    NASA Astrophysics Data System (ADS)

    Fedorenko, G. V.; Oleksenko, L. P.; Maksymovych, N. P.; Matushko, I. P.

    2015-12-01

    The effect of platinum additives on the sensitivity of sensors based on nanosized tin oxide to methane is investigated. It is shown that addition of Pt increases a sensor's sensitivity to CH4. It is found that the dependences of electrical resistance and sensor sensitivity on the concentration of the impregnating solutions of H2[PtCl6] are extremal, which is explained from the point of view of heterogeneous catalysis concepts of the functioning of semiconductor adsorption sensors.

  3. Features of the spectral dependences of transmittance of organic semiconductors based on tert-butyl substituted lutetium phthalocyanine molecules

    SciTech Connect

    Belogorokhov, I. A.; Tikhonov, E. V.; Dronov, M. A.; Belogorokhova, L. I.; Ryabchikov, Yu. V.; Tomilova, L. G.; Khokhlov, D. R.

    2011-11-15

    Vibronic properties of organic semiconductors based on tert-butyl substituted phthalocyanine lutetium diphthalocyanine molecules are studied by IR and Raman spectroscopy. It is shown that substitution of several carbon atoms in initial phthalocyanine (Pc) ligands with {sup 13}C isotope atoms causes a spectral shift in the main absorption lines attributed to benzene, isoindol, and peripheral C-H groups. A comparison of spectral characteristics showed that the shift can vary from 3 to 1 cm{sup -1}.

  4. Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

    DOE PAGES

    GopiReddy, Lakshmi Reddy; Tolbert, Leon M.; Ozpineci, Burak; Pinto, Joao O. P.

    2015-07-15

    Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted basedmore » on time-dependent temperature calculation.« less

  5. Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

    PubMed Central

    2014-01-01

    Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

  6. Tunability of two dimensional n-doped semiconductor photonic crystals based on the Faraday effect.

    PubMed

    Aly, Arafa H; El-Naggar, Sahar A; Elsayed, Hussein A

    2015-06-01

    In this paper, we theoretically investigate the effect of an external magnetic field on the properties of photonic band structures in two-dimensional n-doped semiconductor photonic crystals. We used the frequency-dependent plane wave expansion method. The numerical results reveal that the external magnetic field has a significant effect on the permittivity of the semiconductor materials. Therefore, the photonic band structures can be strongly tuned and controlled. The proposed structure is a good candidate for many applications, including filters, switches, and modulators in optoelectronics and microwave devices.

  7. SIMULATION OF INTRINSIC BIOREMEDIATION PROCESSES AT WURTSMITH AIR FORCE BASE, MICHIGAN

    EPA Science Inventory

    In October, 1988, a KC-135 aircraft crashed at Wurtsmith Air Force base (AFB), Oscoda, Michigan during an attempted landing. Approximately 3000 gallons of jet fuel (JP-4) were spilled onto the ground, with a large portion of the fuel entering the subsurface. Previous investigat...

  8. Intrinsic Functional Connectivity of Amygdala-Based Networks in Adolescent Generalized Anxiety Disorder

    ERIC Educational Resources Information Center

    Roy, Amy K.; Fudge, Julie L.; Kelly, Clare; Perry, Justin S. A.; Daniele, Teresa; Carlisi, Christina; Benson, Brenda; Castellanos, F. Xavier; Milham, Michael P.; Pine, Daniel S.; Ernst, Monique

    2013-01-01

    Objective: Generalized anxiety disorder (GAD) typically begins during adolescence and can persist into adulthood. The pathophysiological mechanisms underlying this disorder remain unclear. Recent evidence from resting state functional magnetic resonance imaging (R-fMRI) studies in adults suggests disruptions in amygdala-based circuitry; the…

  9. Versatile Soft Grippers with Intrinsic Electroadhesion Based on Multifunctional Polymer Actuators.

    PubMed

    Shintake, Jun; Rosset, Samuel; Schubert, Bryan; Floreano, Dario; Shea, Herbert

    2016-01-13

    A highly versatile soft gripper that can handle an unprecedented range of object types is developed based on a new design of dielectric elastomer actuators employing an interdigitated electrode geometry, simultaneously maximizing both electroadhesion and electrostatic actuation while incorporating self-sensing. The multifunctionality of the actuator leads to a highly integrated, lightweight, fast, soft gripper with simplified structure and control. PMID:26551665

  10. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

    PubMed

    Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

    2014-10-20

    In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication. PMID:25607316

  11. Raman scattering in organic semiconductors based on erbium biphthalocyanine molecules and chlorine-containing europium-lutetium triphthalocyanine molecules

    SciTech Connect

    Belogorokhov, I. A.; Mamichev, D. A.; Dronov, M. A.; Pushkarev, V. E.; Tomilova, L. G.; Khokhlov, D. R.

    2010-08-15

    The Raman spectra of semiconductor structures based on erbium biphthalocyanine molecules and chlorine-substituted europium-lutetium triphthalocyanine molecules are studied on excitation with Ar{sup +} laser radiation at the wavelength 514 nm. The data on the spectral position of Raman intensity peaks related to vibronic states of the basic molecular groups forming the semiconductor are obtained. Raman lines irrelevant to the known vibronic states of the basic phthalocyanine molecular groups are observed in the ranges 100-500 and 500-900 cm{sup -1}. It is shown that, in the spectra of triphthalocyanine, some lines are structurally complex and shifted with respect to the characteristic lines of molecular groups by several inverse centimeters.

  12. The entropic enlightenment of organic photochemistry: strategic modifications of intrinsic decay pathways using an information-based approach.

    PubMed

    García-Garibay, Miguel A

    2010-12-01

    Early photochemistry flourished with sunlight plus the experimental and intellectual infrastructure provided by the chemistry of organic compounds. Through the pioneering work of Giacomo Ciamician and Emanuele Paternò, it was shown that photochemical reactions give rise to products that are not accessible by thermal methods, and the green chemistry potential of organic photoreactions was already recognized at the time. Over the last century, the photochemical behavior of many chromophores and functional groups has been well documented in solution. From those studies, it has become clear that applications in organic synthesis suffer from complications arising from competing decay pathways that are intrinsic to those excited states. While there are few opportunities to control the outcome of excited molecules in solution, the potential of organic photochemistry under the influence of highly ordered structures can be appreciated with examples from photobiology. Knowing that nature can synthesize triglycerides with light, CO(2), H(2)O and a few thermal reactions, organic photochemistry should have a great potential and aim high. With that in mind, after exploring the modes of action used by living organisms to take advantage of sunlight, one can identify an approach that relies on entropic factors that result from changes in the information content of the reactant. Analogies with information theory suggest a strategy that may be used to manage chemical information to modify the intrinsic properties of chromophores. Extrapolating from recent examples, it is suggested that an information-based approach to organic photochemistry may result in important advances not only in chemical synthesis and green chemistry, but also in many other applications. PMID:21060939

  13. Terahertz Imaging and Spectroscopy of Carbon-Based and Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Tomaino, Joseph L.

    This thesis will cover work that I have completed relating to the field of terahertz (THz) science. My work has consisted of generating tunable, narrowband THz pulses in a table-top optical setup and using both narrow- and broadband THz pulses to study various material systems. Broadband THz pulses were used to study the transmission properties of a large-area graphene monolayer and vertically grown carbon nanotube forests. We performed raster scans to image our optically invisible graphene sample, which was clearly distinguished from its silicon substrate. From these studies, we were able to calculate the sheet conductivity/resistivity of the graphene using a contactless, non-damaging method that is immune to difficulties arising from local defects within the sample. It also opens up the possibility of studying the material properties of a sample enclosed within certain structures without having to remove the sample and/or damage the encasement. Further, we have discovered that vertically grown carbon nanotubes respond strongly to THz radiation. Preliminary simulations suggest that they respond in a very counterintuitive way and while much remains to be done before we can state with certainty exactly what is physically occurring, the prospect of uncovering such an unanticipated result is tantalizing on its own. I used difference frequency generation of orthogonal, temporally offset, chirped optical pulses to create our narrowband THz pulses. The variable time delay between these pulses was used to adjust the pulse's central frequency. THz time domain spectroscopy and calorimeter-based measurements were used to study the temporal and spectral composition and field strength of the THz pulses. These pulses, along with their broadband counterparts, were used to study electron dynamics within semiconductor nanostructures, both bare quantum wells and quantum wells grown inside of a microcavity. The dynamics of exciton and exciton-polariton polarizations were studied

  14. The Relational-Behavior Model: The Relationship between Intrinsic Motivational Instruction and Extrinsic Motivation in Psychologically Based Instruction

    ERIC Educational Resources Information Center

    Chandler, Donald S., Jr.

    2008-01-01

    This pilot study examined the relational-behavior model (RBM) as a method of intrinsic motivational instruction in psychology courses. Among a sample of 33 college students enrolled in two undergraduate psychology courses, a Spearman rho analysis revealed a significant relationship between the intrinsic motivational factors (e.g. student/class…

  15. B-DNA structure is intrinsically polymorphic: even at the level of base pair positions

    SciTech Connect

    Maehigashi, Tatsuya; Hsiao, Chiaolong; Woods, Kristen Kruger; Moulaei, Tinoush; Hud, Nicholas V.; Williams, Loren Dean

    2012-10-23

    Increasingly exact measurement of single crystal X-ray diffraction data offers detailed characterization of DNA conformation, hydration and electrostatics. However, instead of providing a more clear and unambiguous image of DNA, highly accurate diffraction data reveal polymorphism of the DNA atomic positions and conformation and hydration. Here we describe an accurate X-ray structure of B-DNA, painstakingly fit to a multistate model that contains multiple competing positions of most of the backbone and of entire base pairs. Two of ten base-pairs of CCAGGCCTGG are in multiple states distinguished primarily by differences in slide. Similarly, all the surrounding ions are seen to fractionally occupy discrete competing and overlapping sites. And finally, the vast majority of water molecules show strong evidence of multiple competing sites. Conventional resolution appears to give a false sense of homogeneity in conformation and interactions of DNA. In addition, conventional resolution yields an average structure that is not accurate, in that it is different from any of the multiple discrete structures observed at high resolution. Because base pair positional heterogeneity has not always been incorporated into model-building, even some high and ultrahigh-resolution structures of DNA do not indicate the full extent of conformational polymorphism.

  16. Analytical calculation of intrinsic shielding effectiveness for isotropic and anisotropic materials based on measured electrical parameters

    NASA Astrophysics Data System (ADS)

    Kühn, M.; John, W.; Weigel, R.

    2014-11-01

    This contribution contains the mechanisms for calculation of magnetic shielding effectiveness from material samples, based on measured electrical parameters. For this, measurement systems for the electrical conductivity of high and low conductive material samples with respect to the direction of current flow are presented and discussed. Also a definition of isotropic and anisotropic materials with electrical circuit diagrams is given. For prediction of shielding effectiveness for isotropic and anisotropic materials, several analytical models are presented. Also adaptions to gain a near field solution are part of this contribution. All analytical models will also be validated with an adequate measurement system.

  17. Intrinsic Motivation and Engagement as "Active Ingredients" in Garden-Based Education: Examining Models and Measures Derived from Self-Determination Theory

    ERIC Educational Resources Information Center

    Skinner, Ellen A.; Chi, Una

    2012-01-01

    Building on self-determination theory, this study presents a model of intrinsic motivation and engagement as "active ingredients" in garden-based education. The model was used to create reliable and valid measures of key constructs, and to guide the empirical exploration of motivational processes in garden-based learning. Teacher- and…

  18. Electric Conduction in Semiconductors: A Pedagogical Model Based on the Monte Carlo Method

    ERIC Educational Resources Information Center

    Capizzo, M. C.; Sperandeo-Mineo, R. M.; Zarcone, M.

    2008-01-01

    We present a pedagogic approach aimed at modelling electric conduction in semiconductors in order to describe and explain some macroscopic properties, such as the characteristic behaviour of resistance as a function of temperature. A simple model of the band structure is adopted for the generation of electron-hole pairs as well as for the carrier…

  19. A lysinated thiophene-based semiconductor as a multifunctional neural bioorganic interface.

    PubMed

    Bonetti, Simone; Pistone, Assunta; Brucale, Marco; Karges, Saskia; Favaretto, Laura; Zambianchi, Massimo; Posati, Tamara; Sagnella, Anna; Caprini, Marco; Toffanin, Stefano; Zamboni, Roberto; Camaioni, Nadia; Muccini, Michele; Melucci, Manuela; Benfenati, Valentina

    2015-06-01

    Lysinated molecular organic semiconductors are introduced as valuable multifunctional platforms for neural cells growth and interfacing. Cast films of quaterthiophene (T4) semiconductor covalently modified with lysine-end moieties (T4Lys) are fabricated and their stability, morphology, optical/electrical, and biocompatibility properties are characterized. T4Lys films exhibit fluorescence and electronic transport as generally observed for unsubstituted oligothiophenes combined to humidity-activated ionic conduction promoted by the charged lysine-end moieties. The Lys insertion in T4 enables adhesion of primary culture of rat dorsal root ganglion (DRG), which is not achievable by plating cells on T4. Notably, on T4Lys, the number on adhering neurons/area is higher and displays a twofold longer neurite length than neurons plated on glass coated with poly-l-lysine. Finally, by whole-cell patch-clamp, it is shown that the biofunctionality of neurons cultured on T4Lys is preserved. The present study introduces an innovative concept for organic material neural interface that combines optical and iono-electronic functionalities with improved biocompatibility and neuron affinity promoted by Lys linkage and the softness of organic semiconductors. Lysinated organic semiconductors could set the scene for the fabrication of simplified bioorganic devices geometry for cells bidirectional communication or optoelectronic control of neural cells biofunctionality. PMID:25721438

  20. A lysinated thiophene-based semiconductor as a multifunctional neural bioorganic interface.

    PubMed

    Bonetti, Simone; Pistone, Assunta; Brucale, Marco; Karges, Saskia; Favaretto, Laura; Zambianchi, Massimo; Posati, Tamara; Sagnella, Anna; Caprini, Marco; Toffanin, Stefano; Zamboni, Roberto; Camaioni, Nadia; Muccini, Michele; Melucci, Manuela; Benfenati, Valentina

    2015-06-01

    Lysinated molecular organic semiconductors are introduced as valuable multifunctional platforms for neural cells growth and interfacing. Cast films of quaterthiophene (T4) semiconductor covalently modified with lysine-end moieties (T4Lys) are fabricated and their stability, morphology, optical/electrical, and biocompatibility properties are characterized. T4Lys films exhibit fluorescence and electronic transport as generally observed for unsubstituted oligothiophenes combined to humidity-activated ionic conduction promoted by the charged lysine-end moieties. The Lys insertion in T4 enables adhesion of primary culture of rat dorsal root ganglion (DRG), which is not achievable by plating cells on T4. Notably, on T4Lys, the number on adhering neurons/area is higher and displays a twofold longer neurite length than neurons plated on glass coated with poly-l-lysine. Finally, by whole-cell patch-clamp, it is shown that the biofunctionality of neurons cultured on T4Lys is preserved. The present study introduces an innovative concept for organic material neural interface that combines optical and iono-electronic functionalities with improved biocompatibility and neuron affinity promoted by Lys linkage and the softness of organic semiconductors. Lysinated organic semiconductors could set the scene for the fabrication of simplified bioorganic devices geometry for cells bidirectional communication or optoelectronic control of neural cells biofunctionality.

  1. A Carbonaceous Membrane based on a Polymer of Intrinsic Microporosity (PIM-1) for Water Treatment

    PubMed Central

    Kim, Hee Joong; Kim, Dong-Gyun; Lee, Kyuchul; Baek, Youngbin; Yoo, Youngjae; Kim, Yong Seok; Kim, Byoung Gak; Lee, Jong-Chan

    2016-01-01

    As insufficient access to clean water is expected to become worse in the near future, water purification is becoming increasingly important. Membrane filtration is the most promising technologies to produce clean water from contaminated water. Although there have been many studies to prepare highly water-permeable carbon-based membranes by utilizing frictionless water flow inside the carbonaceous pores, the carbon-based membranes still suffer from several issues, such as high cost and complicated fabrication as well as relatively low salt rejection. Here, we report for the first time the use of microporous carbonaceous membranes via controlled carbonization of polymer membranes with uniform microporosity for high-flux nanofiltration. Further enhancement of membrane performance is observed by O2 plasma treatment. The optimized membrane exhibits high water flux (13.30 LMH Bar−1) and good MgSO4 rejection (77.38%) as well as antifouling properties. This study provides insight into the design of microporous carbonaceous membranes for water purification. PMID:27782212

  2. Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Kane, Matthew H.; Strassburg, Martin; Asghar, Ali; Li, Nola; Fenwick, Will; Ferguson, Ian T.

    2006-02-01

    Wide bandgap nitrides and oxides have been heralded as a possible platform for future semiconductor spintronics applications based on the inherent compatibility of these materials with existing semiconductors as well as theoretical predictions of room temperature ferromagnetism. Experimental reports of room temperature ferromagnetism in these materials are complicated by disparate crystalline quality and phase purity in these materials, as well as conflicting theoretical predictions as to the nature of ferromagnetic behavior in this system. A complete understanding of these materials, and ultimately intelligent design of spintronic devices, will require an exploration of the relationship between the processing techniques, resulting transition metal atom configuration, defects, and electronic compensation as related to the structure, magnetic, and magneto-optical properties of this material. This work explores the growth and properties of Ga 1-xMn xN films by metalorganic chemical vapor deposition on cplane sapphire substrates with varying thickness, Mn concentration, and alloying elements. Homogenous Mn incorporation throughout the films was verified with Secondary Ion Mass Spectroscopy (SIMS), and no macroscopic second phases were detected using X-ray diffraction (XRD). SQUID and vibrating sample magnetometry measurements showed an apparent room temperature ferromagnetic hysteresis, whose strength can be altered considerably through annealing and introduction of either Si or Mg during the growth process. Three sets of Raman modes appeared to be sensitive to Mn incorporation. The intensities of a broad band around 300cm -1 and sharper modes near 669cm -1 increased with increasing Mn concentration. The rise of the former is attributed to a decrease in long-range lattice ordering for higher Mn concentration. The second mode is due to nitrogen vacancy-related local vibrational modes of the GaN host lattice. Si co-doped Ga 1-xMn xN results in shallow donor states in Ga

  3. Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Feng; Fowler, Burt; Zhou, Fei; Chen, Ying-Chen; Lee, Jack C.

    2016-01-01

    Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiOx)-based resistive switching (RS) memory using TiW/SiOx/TiW device structures. The program window (difference between SET voltage and RESET voltage) is dependent on external series resistance, demonstrating that the SET process is due to a voltage-triggered mechanism. The program window has been optimized for program/erase disturbance immunity and reliability for circuit-level applications. The SET and RESET transitions have also been characterized using a dynamic conductivity method, which distinguishes the self-compliance behavior due to an internal series resistance effect (filament) in SiOx-based RS memory. By using a conceptual "filament/resistive gap (GAP)" model of the conductive filament and a proton exchange model with appropriate assumptions, the internal filament resistance and GAP resistance can be estimated for high- and low-resistance states (HRS and LRS), and are found to be independent of external series resistance. Our experimental results not only provide insights into potential reliability issues but also help to clarify the switching mechanisms and device operating characteristics of SiOx-based RS memory.

  4. Band offset formation at semiconductor heterojunctions through density-based minimization of interface energy

    NASA Astrophysics Data System (ADS)

    Tung, Raymond T.; Kronik, Leeor

    2016-08-01

    It is well known that the magnitude of band offset (BO) at any semiconductor heterojunction is directly derivable from the distribution of charge at that interface and that the latter is decided by a minimization of total energy. However, the fact that BO formation is governed by energy minimization has not been explicitly used in theoretical BO models, likely because the equilibrium charge densities at heterojunction interfaces appear difficult to predict, except via explicit calculation. In this paper, electron densities at a large number of (100), (110), and (111) oriented heterojunctions between lattice-matched, isovalent semiconductors with the zinc blende (ZB) structure have been calculated by first-principles methods and analyzed in detail for possible common characteristics among energy-minimized densities. Remarkably, the heterojunction electron density was found to largely depend only on the immediate, local atomic arrangement. In fact, it is so much so that a juxtaposition of local electron-densities generated in oligo-cells (LEGOs) accurately reproduced the charge densities that minimize the energy for the heterojunctions. Furthermore, the charge distribution for each bulk semiconductor was found to display a striking separability of its electrostatic effect into two neutral parts, associated with the cation and the anion, which are approximately transferrable among semiconductors. These discoveries form the basis of a neutral polyhedra theory (NPT) that approximately predicts the equilibrium charge density and BO of relaxed heterojunctions from the energy minimization requirement. Well-known experimentally observed characteristics of heterojunctions, such as the insensitivity of BO to heterojunction orientation and the identity of interface bonds, the transitivity rule, etc., are all in good agreement with the NPT. Therefore, energy minimization, which essentially decides the electronic properties of all other solid and molecular systems, also governs

  5. Semiconductor active plasmonics

    NASA Astrophysics Data System (ADS)

    Mendach, Stefan; Nötzel, Richard

    2013-12-01

    Plasmonics is a research area in nanophotonics attracting increasing interest due to the potential applications in sensing and detecting, sub-wavelength confinement of light, integrated circuits, and many others. In particular, when plasmonic structures such as metal nanostructures or highly doped semiconductor particles are combined with active semiconductor materials and nanostructures, novel exciting physics and applications arise. This special section on semiconductor active plasmonics covers several of the most important and complementary directions in the field. First is the modification of the optical properties of a semiconductor nanostructure due to the close proximity of a metallic film or nanostructure. These arise from the formation hybrid plasmon/exciton states and may lead to enhanced spontaneous emission rates, directional far field emission patterns, strong coupling phenomena, and many more. Second is the realization of sub-wavelength scale nanolasers by coupling a semiconductor gain medium with a plasmonic metallic cavity. Particular emphasis is given on the major technical challenges in the fabrication of these nanolasers, such as device patterning, surface passivation, and metal deposition. While the above topics address mainly active structures and devices operating in the visible or near-infrared wavelength region, in the third, the enhanced THz extinction by periodic arrays of semiconductor particles is discussed. This is based on the build-up of surface plasmon resonances in the doped semiconductor particles which can be resonantly coupled and widely tuned by the carrier density in the semiconductor. We believe these highly diverse aspects give insight into the wide variety of new physics and applications that semiconductor active plasmonics is offering. Finally, we would like to thank the IOP editorial staff, in particular Alice Malhador, for their support, and we would also like to thank the contributors for their efforts and participation

  6. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    SciTech Connect

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-05-07

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally.

  7. Diagnosis of cervical cells based on fractal and Euclidian geometrical measurements: Intrinsic Geometric Cellular Organization

    PubMed Central

    2014-01-01

    Background Fractal geometry has been the basis for the development of a diagnosis of preneoplastic and neoplastic cells that clears up the undetermination of the atypical squamous cells of undetermined significance (ASCUS). Methods Pictures of 40 cervix cytology samples diagnosed with conventional parameters were taken. A blind study was developed in which the clinic diagnosis of 10 normal cells, 10 ASCUS, 10 L-SIL and 10 H-SIL was masked. Cellular nucleus and cytoplasm were evaluated in the generalized Box-Counting space, calculating the fractal dimension and number of spaces occupied by the frontier of each object. Further, number of pixels occupied by surface of each object was calculated. Later, the mathematical features of the measures were studied to establish differences or equalities useful for diagnostic application. Finally, the sensibility, specificity, negative likelihood ratio and diagnostic concordance with Kappa coefficient were calculated. Results Simultaneous measures of the nuclear surface and the subtraction between the boundaries of cytoplasm and nucleus, lead to differentiate normality, L-SIL and H-SIL. Normality shows values less than or equal to 735 in nucleus surface and values greater or equal to 161 in cytoplasm-nucleus subtraction. L-SIL cells exhibit a nucleus surface with values greater than or equal to 972 and a subtraction between nucleus-cytoplasm higher to 130. L-SIL cells show cytoplasm-nucleus values less than 120. The rank between 120–130 in cytoplasm-nucleus subtraction corresponds to evolution between L-SIL and H-SIL. Sensibility and specificity values were 100%, the negative likelihood ratio was zero and Kappa coefficient was equal to 1. Conclusions A new diagnostic methodology of clinic applicability was developed based on fractal and euclidean geometry, which is useful for evaluation of cervix cytology. PMID:24742118

  8. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  9. Highly Stretchable Fully-Printed CNT-Based Electrochemical Sensors and Biofuel Cells: Combining Intrinsic and Design-Induced Stretchability.

    PubMed

    Bandodkar, Amay J; Jeerapan, Itthipon; You, Jung-Min; Nuñez-Flores, Rogelio; Wang, Joseph

    2016-01-13

    We present the first example of an all-printed, inexpensive, highly stretchable CNT-based electrochemical sensor and biofuel cell array. The synergistic effect of utilizing specially tailored screen printable stretchable inks that combine the attractive electrical and mechanical properties of CNTs with the elastomeric properties of polyurethane as a binder along with a judiciously designed free-standing serpentine pattern enables the printed device to possess two degrees of stretchability. Owing to these synergistic design and nanomaterial-based ink effects, the device withstands extremely large levels of strains (up to 500% strain) with negligible effect on its structural integrity and performance. This represents the highest stretchability offered by a printed device reported to date. Extensive electrochemical characterization of the printed device reveal that repeated stretching, torsional twisting, and indenting stress has negligible impact on its electrochemical properties. The wide-range applicability of this platform to realize highly stretchable CNT-based electrochemical sensors and biofuel cells has been demonstrated by fabricating and characterizing potentiometric ammonium sensor, amperometric enzyme-based glucose sensor, enzymatic glucose biofuel cell, and self-powered biosensor. Highly stretchable printable multianalyte sensor, multifuel biofuel cell, or any combination thereof can thus be realized using the printed CNT array. Such combination of intrinsically stretchable printed nanomaterial-based electrodes and strain-enduring design patterns holds considerable promise for creating an attractive class of inexpensive multifunctional, highly stretchable printed devices that satisfy the requirements of diverse healthcare and energy fields wherein resilience toward extreme mechanical deformations is mandatory. PMID:26694819

  10. High-frequency capacitance-voltage characteristics of the heterogeneous structure based on the model of spherical semiconductor particles in a dielectric

    NASA Astrophysics Data System (ADS)

    Tonkoshkur, A. S.; Ivanchenko, A. V.

    2016-08-01

    The dependence of the parameters of the capacitance effect in heterogeneous dispersed two-component structures based on semiconductors from the bulk fraction of the semiconductor component is modeled. The used method for determining the changes of the energy bands bending on the surface of the spherical semiconductor particle by applying dc electric field allowed to calculate the changes of the dipole moment and effective (taking into account the polarization of the free charge) dielectric constant of this semiconductor particle. This result allowed to use the known models of the dielectric constant of two-component structures for the description of the capacitance field effect in the heterogeneous structures. The relations allowing to estimate the value of the bulk donor concentration in the semiconductor component of the matrix of the heterogeneous system and the statistical mixture have been obtained. The approbation of the obtained calculation relations to evaluate the donor concentration in the ZnO grains of zinc oxide varistor ceramics leads to the correct values that are consistent with estimates of other methods and models. It is established that the sensitivity of the relative dielectric constant to the applied dc electric field is dependent on the bulk fraction of the semiconductor particles in the heterogeneous structures. The bulk fraction of the semiconductor particles significantly affects on the dielectric constant beginning with the values from ˜0.8 for matrix systems and ˜0.33 for statistical mixtures.

  11. Seeing diabetes: visual detection of glucose based on the intrinsic peroxidase-like activity of MoS2 nanosheets

    NASA Astrophysics Data System (ADS)

    Lin, Tianran; Zhong, Liangshuang; Guo, Liangqia; Fu, Fengfu; Chen, Guonan

    2014-09-01

    Molybdenum disulfide (MoS2) has attracted increasing research interest recently due to its unique physical, optical and electrical properties, correlated with its 2D ultrathin atomic-layered structure. Until now, however, great efforts have focused on its applications such as lithium ion batteries, transistors, and hydrogen evolution reactions. Herein, for the first time, MoS2 nanosheets are discovered to possess an intrinsic peroxidase-like activity and can catalytically oxidize 3,3',5,5'-tetramethylbenzidine (TMB) by H2O2 to produce a color reaction. The catalytic activity follows the typical Michaelis-Menten kinetics and is dependent on temperature, pH, H2O2 concentration, and reaction time. Based on this finding, a highly sensitive and selective colorimetric method for H2O2 and glucose detection is developed and applied to detect glucose in serum samples. Moreover, a simple, inexpensive, instrument-free and portable test kit for the visual detection of glucose in normal and diabetic serum samples is constructed by utilizing agarose hydrogel as a visual detection platform.Molybdenum disulfide (MoS2) has attracted increasing research interest recently due to its unique physical, optical and electrical properties, correlated with its 2D ultrathin atomic-layered structure. Until now, however, great efforts have focused on its applications such as lithium ion batteries, transistors, and hydrogen evolution reactions. Herein, for the first time, MoS2 nanosheets are discovered to possess an intrinsic peroxidase-like activity and can catalytically oxidize 3,3',5,5'-tetramethylbenzidine (TMB) by H2O2 to produce a color reaction. The catalytic activity follows the typical Michaelis-Menten kinetics and is dependent on temperature, pH, H2O2 concentration, and reaction time. Based on this finding, a highly sensitive and selective colorimetric method for H2O2 and glucose detection is developed and applied to detect glucose in serum samples. Moreover, a simple, inexpensive

  12. Compound semiconductor native oxide-based technologies for optical and electrical devices grown on gallium arsenide substrates using MOCVD

    NASA Astrophysics Data System (ADS)

    Holmes, Adrian Lawrence

    1999-11-01

    The beginning of the modern microelectronics industry can be traced back to an invention made in 1947 when Bardeen and Brattain created the first semiconductor switch, called a transistor. Several other important discoveries followed; however, two of the more significant were (i) the development of the first planar process using silicon dioxide (SiO2) as a mask for diffusions into silicon by Frosch in 1955, and (ii) the subsequent integration of several transistors in tiny circuits by Kilby in 1958. Due to the superior quality of the SiO2-silicon interface, Si-based metal-oxide-semiconductor (MOS) transistors have primarily been used in integrated circuits. Until recently, compound semiconductors did not have a native oxide of sufficient quality to create similar MOS transistors. In 1990, research performed by Professor Holonyak and his group at the University of Illinois at Urbana-Champaign has led to a high-quality, stable, and insulating native oxide created from aluminum-containing compound semiconductor alloys. This study investigates native oxide films that are formed by the thermal oxidation of AlAs and InAlP epitaxial layers grown lattice-matched on GaAs substrates using metalorganic chemical vapor deposition (MOCVD). The primary goal is to evaluate how these native oxides can help form novel device structures and transistors. To qualify the material properties of these native oxide films, we have used several characterization techniques including photoluminescence, cross-sectional scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). Additionally, we have performed leakage current and capacitance-voltage measurements to evaluate the electrical characteristics of the native oxide-semiconductor interface. The kinetics of the thermal oxidation process for both the surface oxidation of InAlP and lateral oxidation of AlAs are studied and contrasted. Aided by this knowledge, we have created a sealed

  13. Semiconductor P-I-N detector

    DOEpatents

    Sudharsanan, Rengarajan; Karam, Nasser H.

    2001-01-01

    A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

  14. Highly Efficient Oxygen-Storage Material with Intrinsic Coke Resistance for Chemical Looping Combustion-Based CO2 Capture.

    PubMed

    Imtiaz, Qasim; Kurlov, Alexey; Rupp, Jennifer Lilia Marguerite; Müller, Christoph Rüdiger

    2015-06-22

    Chemical looping combustion (CLC) and chemical looping with oxygen uncoupling (CLOU) are emerging thermochemical CO2 capture cycles that allow the capture of CO2 with a small energy penalty. Here, the development of suitable oxygen carrier materials is a key aspect to transfer these promising concepts to practical installations. CuO is an attractive material for CLC and CLOU because of its high oxygen-storage capacity (20 wt %), fast reaction kinetics, and high equilibrium partial pressure of oxygen at typical operating temperatures (850-1000 °C). However, despite its promising characteristics, its low Tammann temperature requires the development of new strategies to phase-stabilize CuO-based oxygen carriers. In this work, we report a strategy based on stabilization by co-precipitated ceria (CeO2-x ), which allowed us to increase the oxygen capacity, coke resistance, and redox stability of CuO-based oxygen carriers substantially. The performance of the new oxygen carriers was evaluated in detail and compared to the current state-of-the-art materials, that is, Al2 O3 -stabilized CuO with similar CuO loadings. We also demonstrate that the higher intrinsic oxygen uptake, release, and mobility in CeO2-x -stabilized CuO leads to a three times higher carbon deposition resistance compared to that of Al2 O3 -stabilized CuO. Moreover, we report a high cyclic stability without phase intermixing for CeO2-x -supported CuO. This was accompanied by a lower reduction temperature compared to state-of-the-art Al2 O3 -supported CuO. As a result of its high resistance towards carbon deposition and fast oxygen uncoupling kinetics, CeO2-x -stabilized CuO is identified as a very promising material for CLC- and CLOU-based CO2 capture architectures.

  15. Evaluation of a CdTe semiconductor based compact gamma camera for sentinel lymph node imaging

    SciTech Connect

    Russo, Paolo; Curion, Assunta S.; Mettivier, Giovanni; Esposito, Michela; Aurilio, Michela; Caraco, Corradina; Aloj, Luigi; Lastoria, Secondo

    2011-03-15

    Purpose: The authors assembled a prototype compact gamma-ray imaging probe (MediPROBE) for sentinel lymph node (SLN) localization. This probe is based on a semiconductor pixel detector. Its basic performance was assessed in the laboratory and clinically in comparison with a conventional gamma camera. Methods: The room-temperature CdTe pixel detector (1 mm thick) has 256x256 square pixels arranged with a 55 {mu}m pitch (sensitive area 14.08x14.08 mm{sup 2}), coupled pixel-by-pixel via bump-bonding to the Medipix2 photon-counting readout CMOS integrated circuit. The imaging probe is equipped with a set of three interchangeable knife-edge pinhole collimators (0.94, 1.2, or 2.1 mm effective diameter at 140 keV) and its focal distance can be regulated in order to set a given field of view (FOV). A typical FOV of 70 mm at 50 mm skin-to-collimator distance corresponds to a minification factor 1:5. The detector is operated at a single low-energy threshold of about 20 keV. Results: For {sup 99m}Tc, at 50 mm distance, a background-subtracted sensitivity of 6.5x10{sup -3} cps/kBq and a system spatial resolution of 5.5 mm FWHM were obtained for the 0.94 mm pinhole; corresponding values for the 2.1 mm pinhole were 3.3x10{sup -2} cps/kBq and 12.6 mm. The dark count rate was 0.71 cps. Clinical images in three patients with melanoma indicate detection of the SLNs with acquisition times between 60 and 410 s with an injected activity of 26 MBq {sup 99m}Tc and prior localization with standard gamma camera lymphoscintigraphy. Conclusions: The laboratory performance of this imaging probe is limited by the pinhole collimator performance and the necessity of working in minification due to the limited detector size. However, in clinical operative conditions, the CdTe imaging probe was effective in detecting SLNs with adequate resolution and an acceptable sensitivity. Sensitivity is expected to improve with the future availability of a larger CdTe detector permitting operation at shorter

  16. Semiconductor nanoparticle-based hydrogels prepared via self-initiated polymerization under sunlight, even visible light

    PubMed Central

    Zhang, Da; Yang, Jinhu; Bao, Song; Wu, Qingsheng; Wang, Qigang

    2013-01-01

    Since ancient times, people have used photosynthesized wood, bamboo, and cotton as building and clothing materials. The advantages of photo polymerization include the mild and easy process. However, the direct use of available sunlight for the preparation of materials is still a challenge due to its rather dilute intensity. Here, we show that semiconductor nanoparticles can be used for initiating monomer polymerization under sunlight and for cross-linking to form nanocomposite hydrogels with the aid of clay nanosheets. Hydrogels are an emerging multifunctional platform because they can be easily prepared using solar energy, retain semiconductor nanoparticle properties after immobilization, exhibit excellent mechanical strength (maximum compressive strength of 4.153 MPa and tensile strength 1.535 MPa) and high elasticity (maximum elongation of 2784%), and enable recyclable photodegradation of pollutants. This work suggests that functional nanoparticles can be immobilized in hydrogels for their collective application after combining their mechanical and physiochemical properties. PMID:23466566

  17. Semiconductor laser self-mixing micro-vibration measuring technology based on Hilbert transform

    NASA Astrophysics Data System (ADS)

    Tao, Yufeng; Wang, Ming; Xia, Wei

    2016-06-01

    A signal-processing synthesizing Wavelet transform and Hilbert transform is employed to measurement of uniform or non-uniform vibrations in self-mixing interferometer on semiconductor laser diode with quantum well. Background noise and fringe inclination are solved by decomposing effect, fringe counting is adopted to automatic determine decomposing level, a couple of exact quadrature signals are produced by Hilbert transform to extract vibration. The tempting potential of real-time measuring micro vibration with high accuracy and wide dynamic response bandwidth using proposed method is proven by both simulation and experiment. Advantages and error sources are presented as well. Main features of proposed semiconductor laser self-mixing interferometer are constant current supply, high resolution, simplest optical path and much higher tolerance to feedback level than existing self-mixing interferometers, which is competitive for non-contact vibration measurement.

  18. Significantly elevated dielectric permittivity of Si-based semiconductor/polymer 2-2 composites induced by high polarity polymers

    NASA Astrophysics Data System (ADS)

    Feng, Yefeng; Gong, Honghong; Xie, Yunchuan; Wei, Xiaoyong; Zhang, Zhicheng

    2016-02-01

    To disclose the essential influence of polymer polarity on dielectric properties of polymer composites filled with semiconductive fillers, a series of Si-based semiconductor/polymer 2-2 composites in a series model was fabricated. The dielectric permittivity of composites is highly dependant on the polarity of polymer layers as well as the electron mobility in Si-based semiconductive sheets. The huge dielectric permittivity achieved in Si-based semiconductive sheets after being coated with high polarity polymer layers is inferred to originate from the strong induction of high polarity polymers. The increased mobility of the electrons in Si-based semiconductive sheets coated by high polarity polymer layers should be responsible for the significantly enhanced dielectric properties of composites. This could be facilely achieved by either increasing the polarity of polymer layers or reducing the percolative electric field of Si-based semiconductive sheets. The most promising 2-2 dielectric composite was found to be made of α-SiC with strong electron mobility and poly(vinyl alcohol) (PVA) with high polarity, and its highest permittivity was obtained as 372 at 100 Hz although the permittivity of α-SiC and PVA is 3-5 and 15, respectively. This work may help in the fabrication of high dielectric constant (high-k) composites by tailoring the induction effect of high polarity polymers to semiconductors.

  19. Device Concepts Based on Spin-dependent Transmission in Semiconductor Heterostructures

    NASA Technical Reports Server (NTRS)

    Ting, David Z. - Y.; Cartoixa, X.

    2004-01-01

    We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.

  20. A New Polymer Nanoprobe Based on Chemiluminescence Resonance Energy Transfer for Ultrasensitive Imaging of Intrinsic Superoxide Anion in Mice.

    PubMed

    Li, Ping; Liu, Lu; Xiao, Haibin; Zhang, Wei; Wang, Lulin; Tang, Bo

    2016-03-01

    Despite significant developments in optical imaging of superoxide anion (O2(•-)) as the preliminary reactive oxygen species, novel visualizing strategies that offer ultrahigh sensitivity are still imperative. This is mainly because intrinsic concentrations of O2(•-) are extremely low in living systems. Herein, we present the rational design and construction of a new polymer nanoprobe PCLA-O2(•-) for detecting O2(•-) based on chemiluminescence (CL) resonance energy transfer without an external excitation source. Structurally, PCLA-O2(•-) contains two moieties linked covalently, namely imidazopyrazinone that is capable of CL triggered by O2(•-) as the energy donor and conjugated polymers with light-amplifying property as the energy acceptor. Experiment results demonstrate that PCLA-O2(•-) exhibits ultrahigh sensitivity at the picomole level, dramatically prolonged luminescence time, specificity, and excellent biocompatibility. Without exogenous stimulation, this probe for the first time in situ visualizes O2(•-) level differences between normal and tumor tissues of mice. These exceptional features ensure that PCLA-O2(•-) as a self-luminescing probe is an alternative in vivo imaging approach for ultralow level O2(•-). PMID:26908223

  1. Numerical simulation of temperature field and thermal stress field in silicon-based positive-intrinsic-negative photodiode irradiated by multipulsed millisecond laser

    NASA Astrophysics Data System (ADS)

    Wei, Zhi; Jin, Guangyong; Tan, Yong; Zhao, Hongyu

    2015-10-01

    Laser induced morphological damage have been observed in silicon-based positive-intrinsic-negative photodiode. This paper adopted the methods of the theoretical calculation and finite element numerical simulation to model, then solved the temperature field and thermal stress field in silicon-based positive-intrinsic-negative photodiode irradiated by multipulsed millisecond laser, and researched the features and laws of the temperature field and thermal stress field. As for the thermal-mechanical problem of multipulsed millisecond laser irradiating silicon-based positive-intrinsic-negative photodiode, based on Fourier heat conduction and thermoelasticity theories, we established a two-dimensional axisymmetric mathematical model .Then adopted finite element method to simulate the transient temperature field and thermal stress field. The temperature dependences of the material parameters and the absorption coefficient were taken into account in the calculation. The results indicated that there was the heat accumulation effect when multipulsed millisecond laser irradiating silicon-based positive-intrinsic-negative photodiode. The morphological damage threshold were obtained numerically. The evolution of temperature at the central point of the top surface, the temperature distribution along the radial direction in the end of laser irradiation and the temperature distribution along the axial direction in the end of laser irradiation were considered. Meanwhile, the radial stress, hoop stress, axial stress on the top surface and the R=500μm axis were also considered. The results showed that the morphological damage threshold decreased with the increased of the pulse number. The results of this study have reference significance of researching the thermal and thermal stress effect evolution's features when multipulsed millisecond laser irradiating silicon-based positive-intrinsic-negative photodiode, then revealing the mechanism of interactions between millisecond laser and

  2. The importance of Fe interface states for ferromagnet-semiconductor based spintronic devices

    NASA Astrophysics Data System (ADS)

    Chantis, Athanasios

    2009-03-01

    I present our recent theoretical studies of the bias-controlled spin injection, detection sensitivity and tunneling anisotropic magnetoresistance in ferromagnetic-semiconductor tunnel junctions. Using first-principles electron transport methods we have shown that Fe 3d minority-spin surface (interface) states are responsible for at least two important effects for spin electronics. First, they can produce a sizable Tunneling Anisotropic Magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, Tunneling Magnetoresistance junctions with a single ferromagnetic electrode that can function at room temperatures. Second, in Fe/GaAs(001) magnetic tunnel junctions they produce a strong dependence of the tunneling current spin-polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is found. This explains the observed sign reversal of spin-polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistcance through vertical Fe/GaAs/Fe trilayers. We also present a theoretical description of electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin-polarization. We show that in realistic ferromagnet/semiconductor junctions this bias dependence can originate from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin-polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Our numerical results show that the magnitude of the voltage signal

  3. Third generation photovoltaics based on multiple exciton generation in quantum confined semiconductors.

    PubMed

    Beard, Matthew C; Luther, Joseph M; Semonin, Octavi E; Nozik, Arthur J

    2013-06-18

    Improving the primary photoconversion process in a photovoltaiccell by utilizing the excess energy that is otherwise lost as heat can lead to an increase in the overall power conversion efficiency (PCE). Semiconductor nanocrystals (NCs) with at least one dimension small enough to produce quantum confinement effects provide new ways of controlling energy flow not achievable in thin film or bulk semiconductors. Researchers have developed various strategies to incorporate these novel structures into suitable solar conversion systems. Some of these methods could increase the PCE past the Shockley-Queisser (SQ) limit of ∼33%, making them viable "third generation photovoltaic" (TGPV) cell architectures. Surpassing the SQ limit for single junction solar cells presents both a scientific and a technological challenge, and the use of semiconductor NCs to enhance the primary photoconversion process offers a promising potential solution. The NCs are synthesized via solution phase chemical reactions producing stable colloidal solutions, where the reaction conditions can be modified to produce a variety of shapes, compositions, and structures. The confinement of the semiconductor NC in one dimension produces quantum films, wells, or discs. Two-dimensional confinement leads to quantum wires or rods (QRs), and quantum dots (QDs) are three-dimensionally confined NCs. The process of multiple exciton generation (MEG) converts a high-energy photon into multiple electron-hole pairs. Although many studies have demonstrated that MEG is enhanced in QDs compared with bulk semiconductors, these studies have either used ultrafast spectroscopy to measure the photon-to-exciton quantum yields (QYs) or theoretical calculations. Implementing MEG in a working solar cell has been an ongoing challenge. In this Account, we discuss the status of MEG research and strategies towards implementing MEG in working solar cells. Recently we showed an external quantum efficiency for photocurrent of greater

  4. Effect of Electron-Beam Irradiation on Organic Semiconductor and Its Application for Transistor-Based Dosimeters.

    PubMed

    Kim, Jae Joon; Ha, Jun Mok; Lee, Hyeok Moo; Raza, Hamid Saeed; Park, Ji Won; Cho, Sung Oh

    2016-08-01

    The effects of electron-beam irradiation on the organic semiconductor rubrene and its application as a dosimeter was investigated. Through the measurements of photoluminescence and the ultraviolet photoelectron spectroscopy, we found that electron-beam irradiation induces n-doping of rubrene. Additionally, we fabricated rubrene thin-film transistors with pristine and irradiated rubrene, and discovered that the decrease in transistor properties originated from the irradiation of rubrene and that the threshold voltages are shifted to the opposite directions as the irradiated layers. Finally, a highly sensitive and air-stable electron dosimeter was fabricated based on a rubrene transistor.

  5. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; Wang, J. C.

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  6. Effect of Electron-Beam Irradiation on Organic Semiconductor and Its Application for Transistor-Based Dosimeters.

    PubMed

    Kim, Jae Joon; Ha, Jun Mok; Lee, Hyeok Moo; Raza, Hamid Saeed; Park, Ji Won; Cho, Sung Oh

    2016-08-01

    The effects of electron-beam irradiation on the organic semiconductor rubrene and its application as a dosimeter was investigated. Through the measurements of photoluminescence and the ultraviolet photoelectron spectroscopy, we found that electron-beam irradiation induces n-doping of rubrene. Additionally, we fabricated rubrene thin-film transistors with pristine and irradiated rubrene, and discovered that the decrease in transistor properties originated from the irradiation of rubrene and that the threshold voltages are shifted to the opposite directions as the irradiated layers. Finally, a highly sensitive and air-stable electron dosimeter was fabricated based on a rubrene transistor. PMID:27399874

  7. Application of semiconductor optical amplifier for mobile radio communications networks based on radio-over-fiber systems

    NASA Astrophysics Data System (ADS)

    Andreev, Vladimir A.; Burdin, Vladimir A.; Volkov, Kirill A.; Dashkov, Michael V.; Bukashkin, Sergei A.; Buzov, Alexander L.; Procopiev, Vladimir I.; Zharkov, Alexander D.

    2016-03-01

    The analysis of semiconductor optical amplifier applications in Radio-over-Fiber systems of telecommunication networks is given. In such systems semiconductor optical amplifier can be used for either amplification, modulation or detection, and also as an universal device.

  8. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  9. Strained-bond semiconductors

    NASA Astrophysics Data System (ADS)

    Dow, John D.

    1994-05-01

    Theories of strained-bond semiconductors and superconductors have been developed that promise to have significant impact on future electronic devices of interest to the Air Force. These include: (1) development of a theory of high-temperature superconductivity based on the idea of strained-layer superlattices, (2) elucidation of the physics of doping in Type-2 semiconductor superlattices, which is now central to the development of high-speed field-effect transistors, (3) a theory of dimerization and reconstruction on (001) semiconductor surfaces, (4) theory of Mobius transforms as applied to physics and remote sensing, (5) new understanding of how defects affect the vibrational properties of semiconductors, (6) new methods of efficiently computing the trajectories of atoms in semiconductors by a priori molecular dynamics, (7) elucidation of the criteria affecting quantum-well luminescence from Si, (8) models of the effects of vacancies in large-gap Al(x)Ga(1-x)N alloys, (9) physics of rare-earth-doped silicon, (10) models of Co adsorption to silicon surfaces, (11) theories of how defects affect the properties of large band-gap superlattices, and (12) models of the effects of electronic structure on the properties of semiconductors.

  10. Stable carbon isotope evidence for intrinsic bioremediation of tetrachloroethene and trichloroethene at area 6, Dover Air Force Base.

    PubMed

    Sherwood Lollar, B; Slater, G F; Sleep, B; Witt, M; Klecka, G M; Harkness, M; Spivack, J

    2001-01-15

    Area 6 at Dover Air Force Base (Dover, DE) has been the location of an in-depth study by the RTDF (Remediation Technologies Development Forum Bioremediation of Chlorinated Solvents Action Team) to evaluate the effectiveness of natural attenuation of chlorinated ethene contamination in groundwater. Compound-specific stable carbon isotope measurements for dissolved PCE and TCE in wells distributed throughout the anaerobic portion of the plume confirm that stable carbon isotope values are isotopically enriched in 13C consistent with the effects of intrinsic biodegradation. During anaerobic microbial reductive dechlorination of chlorinated hydrocarbons, the light (12C) versus heavy isotope (13C) bonds are preferentially degraded, resulting in isotopic enrichment of the residual contaminant in 13C. To our knowledge, this study is the first to provide definitive evidence for reductive dechlorination of chlorinated hydrocarbons at a field site based on the delta13C values of the primary contaminants spilled at the site, PCE and TCE. For TCE, downgradient wells show delta13C values as enriched as -18.0/1000 as compared to delta13C values for TCE in the source zone of -25.0 to -26.0/1000. The most enriched delta13C value on the site was observed at well 236, which also contains the highest concentrations of cis-DCE, VC, and ethene, the daughter products of reductive dechlorination. Stable carbon isotope signatures are used to quantify the relative extent of biodegradation between zones of the contaminant plume. On the basis of this approach, it is estimated that TCE in downgradient well 236 is more than 40% biodegraded relative to TCE in the proposed source area.

  11. Influence of Deuterium Treatments on the Polysilicon-Based Metal-Semiconductor-Metal Photodetector.

    PubMed

    Lee, Jae-Sung

    2016-06-01

    The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodetector structure, depending on deuterium treatment, is analyzed by means of the dark current and the photocurrent measurements. Al/Ti bilayer was used as Schottky metal. The deuterium incorporation into the absorption layer, undoped polysilicon, was achieved with annealing process and with ion implantation process, respectively. In the photocurrent-to-dark current ratio measurement, deuterium-ion-implanted photodetector shows over hundred higher than the control device. It means that the heightening of the Schottky barrier and the passivation of grain boundary trap were achieved effectively through the deuterium ion implantation process. PMID:27427689

  12. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Kim, Junghwan; Miyokawa, Norihiko; Ide, Keisuke; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-01

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  13. Influence of Deuterium Treatments on the Polysilicon-Based Metal-Semiconductor-Metal Photodetector.

    PubMed

    Lee, Jae-Sung

    2016-06-01

    The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodetector structure, depending on deuterium treatment, is analyzed by means of the dark current and the photocurrent measurements. Al/Ti bilayer was used as Schottky metal. The deuterium incorporation into the absorption layer, undoped polysilicon, was achieved with annealing process and with ion implantation process, respectively. In the photocurrent-to-dark current ratio measurement, deuterium-ion-implanted photodetector shows over hundred higher than the control device. It means that the heightening of the Schottky barrier and the passivation of grain boundary trap were achieved effectively through the deuterium ion implantation process.

  14. Narrow-linewidth master-oscillator power amplifier based on a semiconductor tapered amplifier.

    PubMed

    Wilson, A C; Sharpe, J C; McKenzie, C R; Manson, P J; Warrington, D M

    1998-07-20

    The output of a grating-stabilized external-cavity diode laser was injected into a semiconductor tapered amplifier in a master-oscillator power amplifier configuration, producing as much as 500 mW of power with narrow linewidth. The additional linewidth that is due to the tapered amplifier is much smaller than the typical linewidth of grating-stabilized laser diodes. To demonstrate the usefulness of the narrow linewidth and high output power, we used the system to perform Doppler-free two-photon spectroscopy with rubidium. PMID:18285950

  15. All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

    PubMed Central

    Bae, Yoon Cheol; Lee, Ah Rahm; Baek, Gwang Ho; Chung, Je Bock; Kim, Tae Yoon; Park, Jea Gun; Hong, Jin Pyo

    2015-01-01

    Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes. PMID:26289565

  16. Atmospheric CO2 remote sensing system based on high brightness semiconductor lasers and single photon counting detection

    NASA Astrophysics Data System (ADS)

    Pérez-Serrano, Antonio; Vilera, Maria Fernanda; Esquivias, Ignacio; Faugeron, Mickael; Krakowski, Michel; van Dijk, Frédéric; Kochem, Gerd; Traub, Martin; Adamiec, Pawel; Barbero, Juan; Ai, Xiao; Rarity, John G.; Quatrevalet, Mathieu; Ehret, Gerhard

    2015-10-01

    We propose an integrated path differential absorption lidar system based on all-semiconductor laser sources and single photon counting detection for column-averaged measurements of atmospheric CO2. The Random Modulated Continuous Wave (RM-CW) approach has been selected as the best suited to semiconductor lasers. In a RM-CW lidar, a pseudo random sequence is sent to the atmosphere and the received signal reflected from the target is correlated with the original sequence in order to retrieve the path length. The transmitter design is based on two monolithic Master Oscillator Power Amplifiers (MOPAs), providing the on-line and off-line wavelengths close to the selected absorption line around 1.57 µm. Each MOPA consists of a frequency stabilized distributed feedback master oscillator, a bent modulator section, and a tapered amplifier. This design allows the emitters to deliver high power and high quality laser beams with good spectral properties. An output power above 400 mW with a SMSR higher than 45 dB and modulation capability have been demonstrated. On the side of the receiver, our theoretical and experimental results indicate that the major noise contribution comes from the ambient light and detector noise. For this reason narrow band optical filters are required in the envisioned space-borne applications. In this contribution, we present the latest progresses regarding the design, modeling and characterization of the transmitter, the receiver, the frequency stabilization unit and the complete system.

  17. New diluted ferromagnetic semiconductor with Curie temperature up to 180 K and isostructural to the '122' iron-based superconductors.

    PubMed

    Zhao, K; Deng, Z; Wang, X C; Han, W; Zhu, J L; Li, X; Liu, Q Q; Yu, R C; Goko, T; Frandsen, B; Liu, Lian; Ning, Fanlong; Uemura, Y J; Dabkowska, H; Luke, G M; Luetkens, H; Morenzoni, E; Dunsiger, S R; Senyshyn, A; Böni, P; Jin, C Q

    2013-01-01

    Diluted magnetic semiconductors have received much attention due to their potential applications for spintronics devices. A prototypical system (Ga,Mn)As has been widely studied since the 1990s. The simultaneous spin and charge doping via hetero-valent (Ga(3+),Mn(2+)) substitution, however, resulted in severely limited solubility without availability of bulk specimens. Here we report the synthesis of a new diluted magnetic semiconductor (Ba(1-x)K(x))(Zn(1-y)Mn(y))(2)As(2), which is isostructural to the 122 iron-based superconductors with the tetragonal ThCr(2)Si(2) (122) structure. Holes are doped via (Ba(2+), K(1+)) replacements, while spins via isovalent (Zn(2+),Mn(2+)) substitutions. Bulk samples with x=0.1-0.3 and y=0.05-0.15 exhibit ferromagnetic order with T(C) up to 180 K, which is comparable to the highest T(C) for (Ga,Mn)As and significantly enhanced from T(C) up to 50 K of the '111'-based Li(Zn,Mn)As. Moreover, ferromagnetic (Ba,K)(Zn,Mn)(2)As(2) shares the same 122 crystal structure with semiconducting BaZn(2)As(2), antiferromagnetic BaMn(2)As(2) and superconducting (Ba,K)Fe(2)As(2), which makes them promising for the development of multilayer functional devices.

  18. Optical waveguide beam splitters based on hybrid metal-dielectric-semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Li, Yunyun; Liang, Junwu; Zhang, Qinglin; Zhou, Zidong; Li, Honglai; Fan, Xiaopeng; Wang, Xiaoxia; Fan, Peng; Yang, Yankun; Guo, Pengfei; Zhuang, Xiujuan; Zhu, Xiaoli; Liao, Lei; Pan, Anlian

    2015-11-01

    Miniature integration is desirable for the future photonics circuit. Low-dimensional semiconductor and metal nanostructures is the potential building blocks in compact photonic circuits for their unique electronic and optical properties. In this work, a hybrid metal-dielectric-semiconductor nanostructure is designed and fabricated to realizing a nano-scale optical waveguide beam splitter, which is constructed with the sandwiched structure of a single CdS nanoribbon/HfO2 thin film/Au nanodisk arrays. Micro-optical investigations reveal that the guided light outputting at the terminal end of the CdS ribbon is well separated into several light spots. Numerical simulations further demonstrate that the beam splitting mechanism is attributed to the strong electromagnetic coupling between the Au nanodisks and light guided in the nanoribbon. The number of the split beams (light spots) at the terminal end of the nanoribbon is mainly determined by the number of the Au nanodisk rows, as well as the distance of the blank region between the nanodisks array and the end of the CdS ribbon, owing to the interference between the split beams. These optical beam splitters may find potential applications in high-density integrated photonic circuits and systems.

  19. Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.

    PubMed

    Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin

    2014-02-21

    The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

  20. Study of Fused Thiophene Based Organic Semiconductors and Interfacial Self-Assembled Monolayer (SAM) for Thin-Film Transistor (TFT) Application

    NASA Astrophysics Data System (ADS)

    Youn, Jangdae

    , the role of a thiol SAM on top of the gold electrode is investigated in terms of semiconductor film structure and OTFT performance in the bottom-contact/ bottom-gate TFT structure by using one of the most successful small molecule based n-type organic semiconductors, α,ω-diperfluorohexylquarterthiophene (DFH-4T) and N,N' bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarb-oximide) (PDI-8CN2). The study of semiconductor film morphogy shows that the semiconductor molecules at the gold/SAM/semiconductor interface are aligned normal to the substrate, facilitating charge transport at the interfacial region. As a result, contact resistance was minimized, and the OTFT device performance was improved. When it comes to semiconductor-dielectric interface, it is important because the charge transport layer of the OTFTs is formed within several monolayers of semiconductor films right above the gate dielectric. The physical and chemical nature of the dielectric surface significantly influences charge flow. For example, the surface of a SiO2 dielectric contains a large number of SiOH functional groups in air. After depositing semiconductor material on top of the SiO2 surface, those SiOH functional groups play a role of charge traps. One of the most effective ways of circumventing this problem is to introduce organic self-assembled monolayers (SAMs) on the SiO 2 dielectric surface. The SAMs in the semiconductor-dielectric interface not only minimize the charge traps but also improve the crystallinity of top semiconductor layers. Furthermore, the improvement of the semiconductor film microstructure depends on the structure of the SAM. When the SAM is disorganized, the size and density of crystalline domains in the semiconductor film decline. Meanwhile, the domain size and population density of crystalline domains expand when the SAM is tightly packed and vertically aligned. In this thesis, a humidity control method of fabricating high quality octadecyltrichlorosilane (OTS) SAM on SiO2

  1. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  2. Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

    NASA Astrophysics Data System (ADS)

    Oulachgar, El Hassane

    As the semiconductors industry is moving toward nanodevices, there is growing need to develop new materials and thin films deposition processes which could enable strict control of the atomic composition and structure of thin film materials in order to achieve precise control on their electrical and optical properties. The accurate control of thin film characteristics will become increasingly important as the miniaturization of semiconductor devices continue. There is no doubt that chemical synthesis of new materials and their self assembly will play a major role in the design and fabrication of next generation semiconductor devices. The objective of this work is to investigate the chemical vapor deposition (CVD) process of thin film using a polymeric precursor as a source material. This process offers many advantages including low deposition cost, hazard free working environment, and most importantly the ability to customize the polymer source material through polymer synthesis and polymer functionalization. The combination between polymer synthesis and CVD process will enable the design of new generation of complex thin film materials with a wide range of improved chemical, mechanical, electrical and optical properties which cannot be easily achieved through conventional CVD processes based on gases and small molecule precursors. In this thesis we mainly focused on polysilanes polymers and more specifically poly(dimethylsilanes). The interest in these polymers is motivated by their distinctive electronic and photonic properties which are attributed to the delocalization of the sigma-electron along the Si-Si backbone chain. These characteristics make polysilane polymers very promising in a broad range of applications as a dielectric, a semiconductor and a conductor. The polymer-based CVD process could be eventually extended to other polymer source materials such as polygermanes, as well as and a variety of other inorganic and hybrid organic-inorganic polymers

  3. BRIDGE21--Exploring the Potential to Foster Intrinsic Student Motivation through a Team-Based, Technology-Mediated Learning Model

    ERIC Educational Resources Information Center

    Lawlor, John; Marshall, Kevin; Tangney, Brendan

    2016-01-01

    It is generally accepted that intrinsic student motivation is a critical requirement for effective learning but formal learning in school places a huge reliance on extrinsic motivation to focus the learner. This reliance on extrinsic motivation is driven by the pressure on formal schooling to "deliver to the test." The experience of the…

  4. Facing the Sunrise: Cultural Worldview Underlying Intrinsic-Based Encoding of Absolute Frames of Reference in Aymara

    ERIC Educational Resources Information Center

    Nunez, Rafael E.; Cornejo, Carlos

    2012-01-01

    The Aymara of the Andes use absolute (cardinal) frames of reference for describing the relative position of ordinary objects. However, rather than encoding them in available absolute lexemes, they do it in lexemes that are intrinsic to the body: "nayra" ("front") and "qhipa" ("back"), denoting east and west, respectively. Why? We use different but…

  5. The Narrow-Band Model and Semi-Conductor Theory

    ERIC Educational Resources Information Center

    Tanner, B. K.

    1976-01-01

    Applies the narrow-band model to the instruction of intrinsic and extrinsic semiconductors along with the phenomenon of compensation. Advocates the model for undergraduate instruction due to its intuitive appeal and mathematical simplicity. (CP)

  6. Thin Film Transistor Gas Sensors Incorporating High-Mobility Diketopyrrolopyrole-Based Polymeric Semiconductor Doped with Graphene Oxide.

    PubMed

    Cheon, Kwang Hee; Cho, Jangwhan; Kim, Yun-Hi; Chung, Dae Sung

    2015-07-01

    In this work, we fabricated a diketopyrrolopyrole-based donor-acceptor copolymer composite film. This is a high-mobility semiconductor component with a functionalized-graphene-oxide (GO) gas-adsorbing dopant, used as an active layer in gas-sensing organic-field-effect transistor (OFET) devices. The GO content of the composite film was carefully controlled so that the crystalline orientation of the semiconducting polymer could be conserved, without compromising its gas-adsorbing ability. The resulting optimized device exhibited high mobility (>1 cm(2) V(-1) s(-1)) and revealed sensitive response during programmed exposure to various polar organic molecules (i.e., ethanol, acetone, and acetonitrile). This can be attributed to the high mobility of polymeric semiconductors, and also to their high surface-to-volume ratio of GO. The operating mechanism of the gas sensing GO-OFET is fully discussed in conjunction with charge-carrier trap theory. It was found that each transistor parameter (e.g., mobility, threshold voltage), responds independently to each gas molecule, which enables high selectivity of GO-OFETs for various gases. Furthermore, we also demonstrated practical GO-OFET devices that operated at low voltage (<1.5 V), and which successfully responded to gas exposure.

  7. Thin Film Transistor Gas Sensors Incorporating High-Mobility Diketopyrrolopyrole-Based Polymeric Semiconductor Doped with Graphene Oxide.

    PubMed

    Cheon, Kwang Hee; Cho, Jangwhan; Kim, Yun-Hi; Chung, Dae Sung

    2015-07-01

    In this work, we fabricated a diketopyrrolopyrole-based donor-acceptor copolymer composite film. This is a high-mobility semiconductor component with a functionalized-graphene-oxide (GO) gas-adsorbing dopant, used as an active layer in gas-sensing organic-field-effect transistor (OFET) devices. The GO content of the composite film was carefully controlled so that the crystalline orientation of the semiconducting polymer could be conserved, without compromising its gas-adsorbing ability. The resulting optimized device exhibited high mobility (>1 cm(2) V(-1) s(-1)) and revealed sensitive response during programmed exposure to various polar organic molecules (i.e., ethanol, acetone, and acetonitrile). This can be attributed to the high mobility of polymeric semiconductors, and also to their high surface-to-volume ratio of GO. The operating mechanism of the gas sensing GO-OFET is fully discussed in conjunction with charge-carrier trap theory. It was found that each transistor parameter (e.g., mobility, threshold voltage), responds independently to each gas molecule, which enables high selectivity of GO-OFETs for various gases. Furthermore, we also demonstrated practical GO-OFET devices that operated at low voltage (<1.5 V), and which successfully responded to gas exposure. PMID:26068504

  8. Capacitance-voltage characteristics of Si and Ge nanomembrane based flexible metal-oxide-semiconductor devices under bending conditions

    NASA Astrophysics Data System (ADS)

    Cho, Minkyu; Seo, Jung-Hun; Park, Dong-Wook; Zhou, Weidong; Ma, Zhenqiang

    2016-06-01

    Metal-oxide-semiconductor (MOS) device is the basic building block for field effect transistors (FET). The majority of thin-film transistors (TFTs) are FETs. When MOSFET are mechanically bent, the MOS structure will be inevitably subject to mechanical strain. In this paper, flexible MOS devices using single crystalline Silicon (Si) and Germanium (Ge) nanomembranes (NM) with SiO2, SiO, and Al2O3 dielectric layers are fabricated on a plastic substrate. The relationships between semiconductor nanomembranes and various oxide materials are carefully investigated under tensile/compressive strain. The flatband voltage, threshold voltage, and effective charge density in various MOS combinations revealed that Si NM-SiO2 configuration shows the best interface charge behavior, while Ge NM-Al2O3 shows the worst. This investigation of flexible MOS devices can help us understand the impact of charges in the active region of the flexible TFTs and capacitance changes under the tensile/compressive strains on the change in electrical characteristics in flexible NM based TFTs.

  9. Band gap narrowing in zinc oxide-based semiconductor thin films

    SciTech Connect

    Kumar, Jitendra E-mail: akrsri@gmail.com; Kumar Srivastava, Amit E-mail: akrsri@gmail.com

    2014-04-07

    A simple expression is proposed for the band gap narrowing (or shrinkage) in semiconductors using optical absorption measurements of spin coated 1 at. % Ga-doped ZnO (with additional 0–1.5 at. % zinc species) thin films as ΔE{sub BGN} = Bn{sup 1/3} [1 − (n{sub c}/n){sup 1/3}], where B is the fitting parameter, n is carrier concentration, and n{sub c} is the critical density required for shrinkage onset. Its uniqueness lies in not only describing variation of ΔE{sub BGN} correctly but also allowing deduction of n{sub c} automatically for several M-doped ZnO (M: Ga, Al, In, B, Mo) systems. The physical significance of the term [1 − (n{sub c}/n){sup 1/3}] is discussed in terms of carrier separation.

  10. Wireless Solar Water Splitting Using Silicon-Based Semiconductors and Earth-Abundant Catalysts

    SciTech Connect

    Reece, SY; Hamel, JA; Sung, K; Jarvi, TD; Esswein, AJ; Pijpers, JJH; Nocera, DG

    2011-11-03

    We describe the development of solar water-splitting cells comprising earth-abundant elements that operate in near-neutral pH conditions, both with and without connecting wires. The cells consist of a triple junction, amorphous silicon photovoltaic interfaced to hydrogen- and oxygen-evolving catalysts made from an alloy of earth-abundant metals and a cobalt|borate catalyst, respectively. The devices described here carry out the solar-driven water-splitting reaction at efficiencies of 4.7% for a wired configuration and 2.5% for a wireless configuration when illuminated with 1 sun (100 milliwatts per square centimeter) of air mass 1.5 simulated sunlight. Fuel-forming catalysts interfaced with light-harvesting semiconductors afford a pathway to direct solar-to-fuels conversion that captures many of the basic functional elements of a leaf.

  11. The application of semiconductor based UV sources for the detection and classification of biological material

    NASA Astrophysics Data System (ADS)

    Kaliszewski, Miron; Włodarski, Maksymilian; Bombalska, Aneta; Kwaśny, Mirosław; Mularczyk-Oliwa, Monika; Młyńczak, Jarosław; Kopczyński, Krzysztof

    2013-01-01

    Fluorescence analysis of dry samples of biological origin like pollens, fungi, flours and proteins was presented. In the laboratory study presentenced here two fluorescence methods using semiconductor light sources were applied. Firstly, laser induced fluorescence emission (LIF) spectra of the samples were recorded under 266 and 375 nm excitation. The second technique covered fluorescence decay (FD) at 280 and 340 nm excitation. Hierarchical Cluster Analysis (HCA) of acquired spectra and decays was performed. Both LIF and FD showed that single wavelength excitation 266 and 280 nm, respectively allow distinguishing of pollens from other samples. Combining data of both excitation wavelengths, for LIF and FD, respectively, resulted in substantial improvement of data classification for groups according to the samples origin.

  12. Spin polarized state filter based on semiconductor–dielectric–iron–semiconductor multi-nanolayer device

    SciTech Connect

    Makarov, Vladimir I.; Khmelinskii, Igor

    2015-04-15

    Highlights: • Development of a new spintronics device. • Development of quantum spin polarized filters. • Development of theory of quantum spin polarized filter. - Abstract: Presently we report spin-polarized state transport in semiconductor–dielectric–iron–semiconductor (SDIS) four-nanolayer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-nanolayer devices. The theoretical model developed earlier is extended and used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment is also performed. The model predicts an exchange spectrum comprising a series of peaks, with the spectral structure determined by several factors, discussed in the paper.

  13. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    PubMed

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-01

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  14. New photovoltaic devices based on the sensitization of p-type semiconductors: challenges and opportunities.

    PubMed

    Odobel, Fabrice; Le Pleux, Loïc; Pellegrin, Yann; Blart, Errol

    2010-08-17

    Because solar energy is the most abundant renewable energy resource, the clear connection between human activity and global warming has strengthened the interest in photovoltaic science. Dye-sensitized solar cells (DSSCs) provide a promising low-cost technology for harnessing this energy source. Until recently, much of the research surrounding DSSCs had been focused on the sensitization of n-type semiconductors, such as titanium dioxide (Gratzel cells). In an n-type dye-sensitized solar cell (n-DSSC), an electron is injected into the conduction band of an n-type semiconductor (n-SC) from the excited state of the sensitizer. Comparatively few studies have examined the sensitization of wide bandgap p-type semiconductors. In a p-type DSSC (p-DSSC), the photoexcited sensitizer is reductively quenched by hole injection into the valence band of a p-type semiconductor (p-SC). The study of p-DSSCs is important both to understand the factors that control the rate of hole photoinjection and to aid the rational design of efficient p-DSSCs. In theory, p-DSSCs should be able to work as efficiently as n-DSSCs. In addition, this research provides a method for preparing tandem DSSCs consisting of a TiO(2)-photosensitized anode and a photosensitized p-type SC as a cathode. Tandem DSSCs are particularly important because they represent low-cost photovoltaic devices whose photoconversion efficiencies could exceed 15%. This Account describes recent research results on p-DSSCs. Because these photoelectrochemical devices are the mirror images of conventional n-DSSCs, they share some structural similarities, but they use different materials and have different charge transfer kinetics. In this technology, nickel oxide is the predominant p-SC material used, but much higher photoconversion efficiencies could be achieved with new p-SCs materials with deeper valence band potential. Currently, iodide/triiodide is the main redox mediator of electron transport within these devices, but we expect

  15. Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

    NASA Astrophysics Data System (ADS)

    Pavlov, Y. S.; Surma, A. M.; Lagov, P. B.; Fomenko, Y. L.; Geifman, E. M.

    2016-09-01

    Radiation processing technologies for static and dynamic parameters modification of silicon bipolar semiconductor devices implemented. Devices of different classes with wide range of operating currents (from a few mA to tens kA) and voltages (from a few volts to 8 kV) were processed in large scale including power diodes and thyristors, high-frequency bipolar and IGBT transistors, fast recovery diodes, pulsed switching diodes, precise temperature- compensated Zener diodes (in general more than fifty 50 device types), produced by different enterprises. The necessary changes in electrical parameters and characteristics of devices caused by formation in the device structures of electrically active and stable in the operating temperature range sub-nanoscale recombination centres. Technologies implemented in the air with high efficiency and controllability, and are an alternative to diffusion doping of Au or Pt, γ-ray, proton and low-Z ion irradiation.

  16. Investigation on Photoelectric Behavior of Metal-Insulator-Semiconductor Structure Based on Titania Nanotubes Arrays

    NASA Astrophysics Data System (ADS)

    Wang, Lili; Panaitescu, Eugen; Richter, Christiaan; Menon, Latika

    2014-03-01

    Titanium dioxide (TiO2) has attracted great interest as an inexpensive, earth-abundant and environment-friendly anode material for next generation photovoltaic devices and the metal-insulator-semiconductor (MIS) concept is one of the most promising approaches for improving solar cell cost effectiveness (in /W). We investigated hybrid MIS structures of semiconducting ordered titania nanotube arrays integrated with insulating iron oxide or copper oxide layers and metallic copper. The morphological and structural properties of the samples were analyzed by scanning and transmission electron microscopy, energy-dispersive X-ray spectroscopy with elemental mapping, and X-ray diffraction. The nanotubular morphology represents a step change from the current thin film approach, providing significantly larger surface area while facilitating the charge separation and electron transport. Photoelectric behavior of the new structures was estimated by transient response, quantum efficiency and spectral response, and a solar simulator was used for recording the photovoltaic response.

  17. InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge

    NASA Astrophysics Data System (ADS)

    Aksenov, M. S.; Kokhanovskii, A. Yu.; Polovodov, P. A.; Devyatova, S. F.; Golyashov, V. A.; Kozhukhov, A. S.; Prosvirin, I. P.; Khandarkhaeva, S. E.; Gutakovskii, A. K.; Valisheva, N. A.; Tereshchenko, O. E.

    2015-10-01

    We developed and applied a method of InAs passivation in the low-energy plasma of Townsend discharge. The controlled interface oxidation in the Ar:O2:CF4 gas mixture under visualization of gas discharge plasma allowed growing thin homogeneous films in the range of 5-15 nm thickness. Oxidation with the addition of CF4 in gas-discharge plasma led to the formation of In and As oxyfluorides with a wide insulating gap and isostructural interface with unpinned Fermi level behavior. The metal-oxide-semiconductor structure showed excellent capacitance-voltage characteristics: small frequency dispersion (<15 mV), density of interface states (Dit) in the gap below 5 × 1010 eV-1cm-2, and fixed charge (Qfix) below 5 × 1011 cm-2.

  18. Organic light-emitting diode with an emitter based on a planar layer of CdSe semiconductor nanoplatelets

    NASA Astrophysics Data System (ADS)

    Vashchenko, A. A.; Vitukhnovskii, A. G.; Lebedev, V. S.; Selyukov, A. S.; Vasiliev, R. B.; Sokolikova, M. S.

    2014-09-01

    Colloidal CdSe semiconductor nanoplatelets with characteristic longitudinal sizes of 20-70 nm and thicknesses of several atomic layers are synthesized. The spectra and kinetics of the photoluminescence of these quasi-two-dimensional nanostructures (quantum wells) at room and cryogenic temperatures are investigated. A hybrid light-emitting diode with the electron and hole transport layers based on TAZ and TPD organic compounds, respectively, and the active "emissive" element based on a layer of such single-component nanoplatelets is designed. The spectral and electrical characteristics of the fabricated device, emitting at a wavelength of λ = 515 nm, are determined. The use of quasi-two-dimensional nanostructures of this kind (nanoplatelets) is promising for the fabrication of hybrid light-emitting diodes with pure colors.

  19. Low voltage tunneling magnetoresistance in CuCrO{sub 2}-based semiconductor heterojunctions at room temperature

    SciTech Connect

    Li, X. R.; Han, M. J.; Shan, C.; Hu, Z. G. Zhu, Z. Q.; Chu, J. H.; Wu, J. D.

    2014-12-14

    CuCrO{sub 2}-based heterojunction diodes with rectifying characteristics have been fabricated by combining p-type Mg-doped CuCrO{sub 2} and n-type Al-doped ZnO. It was found that the current for the heterojunction in low bias voltage region is dominated by the trap-assisted tunneling mechanism. Positive magnetoresistance (MR) effect for the heterojunction can be observed at room temperature due to the tunneling-induced antiparallel spin polarization near the heterostructure interface. The MR effect becomes enhanced with the magnetic field, and shows the maximum at a bias voltage around 0.5 V. The phenomena indicate that the CuCrO{sub 2}-based heterojunction is a promising candidate for low-power semiconductor spintronic devices.

  20. Highly sensitive sensors for alkali metal ions based on complementary-metal-oxide-semiconductor-compatible silicon nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Guo-Jun; Agarwal, Ajay; Buddharaju, Kavitha D.; Singh, Navab; Gao, Zhiqiang

    2007-06-01

    Highly sensitive sensors for alkali metal ions based on complementary-metal-oxide- semiconductor-compatible silicon nanowires (SiNWs) with crown ethers covalently immobilized on their surface are presented. A densely packed organic monolayer terminated with amine groups is introduced to the SiNW surface via hydrosilylation. Amine-modified crown ethers, acting as sensing elements, are then immobilized onto the SiNWs through a cross-linking reaction with the monolayer. The crown ether-functionalized SiNWs recognize Na+ and K+ according to their complexation ability to the crown ethers. The SiNW sensors are highly selective and capable of achieving an ultralow detection limit down to 50nM, over three orders of magnitude lower than that of conventional crown ether-based ion-selective electrodes.

  1. Copper-based diamond-like ternary semiconductors for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Skoug, Eric John

    Heightened global concern over greenhouse gas emissions has led to an increased demand for clean energy conversion technologies. Thermoelectric materials convert directly between thermal and electrical energy and can increase the efficiency of existing processes via waste heat recovery and solid-state climate control applications. The conversion efficiency of available thermoelectric materials and the devices comprised of them is unfortunately quite low, and thus new materials must be developed in order for thermoelectrics to keep pace with competing technologies. One approach to increasing the conversion efficiency of a given material is to decrease its lattice thermal conductivity, which has traditionally been accomplished by introducing phonon scattering centers into the material. These scattering centers also tend to degrade electronic transport in the material, thereby minimizing the overall effect on the thermoelectric performance. The purpose of this work is to develop materials with inherently low lattice thermal conductivity such that no extrinsic modifications are required. A novel approach in which complex ternary semiconductors are derived from well-known binary or elemental semiconductors is employed to identify candidate materials. Ternary diamond-like compounds, namely Cu2SnSe 3 and Cu3SbSe4, are synthesized, characterized, and optimized for thermoelectric applications. It is found that sample-to-sample variations in hole concentration limits the plausibility of Cu2SnSe3 as a thermoelectric material. Cu3SbSe 4 is found to be a promising material that can achieve thermoelectric performance comparable to state-of-the-art materials when optimized. This work uncovers anomalous thermal conductivity in several Cu-Sb-Se ternary compounds, which is used to develop a set of guidelines relating crystal structure to inherently low lattice thermal conductivity.

  2. Creating semiconductor metafilms with designer absorption spectra.

    PubMed

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L

    2015-01-01

    The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate that near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells. PMID:26184335

  3. Creating semiconductor metafilms with designer absorption spectra

    PubMed Central

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2015-01-01

    The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate that near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells. PMID:26184335

  4. Creating semiconductor metafilms with designer absorption spectra

    NASA Astrophysics Data System (ADS)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2015-07-01

    The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate that near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells.

  5. Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition

    SciTech Connect

    Demidov, E. S. Podol'skii, V. V.; Lesnikov, V. P.; Sapozhnikov, M. V.; Druzhnov, D. M.; Gusev, S. N.; Gribkov, B. A.; Filatov, D. O.; Stepanova, Yu. S.; Levchuk, S. A.

    2008-01-15

    Properties of thin (30-100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III-V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3d impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III-V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3d-impurity solid solution, rather than ferromagnetic phase inclusions.

  6. Charge carrier coherence and Hall effect in organic semiconductors

    DOE PAGES

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

  7. Geometric intrinsic symmetries

    SciTech Connect

    Gozdz, A. Szulerecka, A.; Pedrak, A.

    2013-08-15

    The problem of geometric symmetries in the intrinsic frame of a many-body system (nucleus) is considered. An importance of symmetrization group notion is discussed. Ageneral structure of the intrinsic symmetry group structure is determined.

  8. Superconductivity in doped semiconductors

    NASA Astrophysics Data System (ADS)

    Bustarret, E.

    2015-07-01

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  9. Semiconductor films on flexible iridium substrates

    DOEpatents

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  10. Wide-Bandgap Semiconductors

    SciTech Connect

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  11. Semiconductor devices having a recessed electrode structure

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  12. Diode having trenches in a semiconductor region

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  13. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  14. Chemically Derivatized Semiconductor Photoelectrodes.

    ERIC Educational Resources Information Center

    Wrighton, Mark S.

    1983-01-01

    Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

  15. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Yu, Xuezhe; Li, Lixia; Wang, Hailong; Xiao, Jiaxing; Shen, Chao; Pan, Dong; Zhao, Jianhua

    2016-05-01

    For the epitaxial growth of Ga-based III-V semiconductor nanowires (NWs) on Si, Ga droplets could provide a clean and compatible solution in contrast to the common Au catalyst. However, the use of Ga droplets is rather limited except for that in Ga-catalyzed GaAs NW studies in a relatively narrow growth temperature (Ts) window around 620 °C on Si. In this paper, we have investigated the two-step growth of Ga-catalyzed III-V NWs on Si (111) substrates by molecular-beam epitaxy. First, by optimizing the surface oxide, vertically aligned GaAs NWs with a high yield are obtained at Ts = 620 °C. Then a two-temperature procedure is adopted to preserve Ga droplets at lower Ts, which leads to an extension of Ts down to 500 °C for GaAs NWs. Based on this procedure, systematic morphological and structural studies for Ga-catalyzed GaAs NWs in the largest Ts range could be presented. Then within the same growth scheme, for the first time, we demonstrate Ga-catalyzed GaAs/GaSb heterostructure NWs. These GaSb NWs are axially grown on the GaAs NW sections and are pure zinc-blende single crystals. Compositional measurements confirm that the catalyst particles indeed mainly consist of Ga and GaSb sections are of high purity but with a minor composition of As. In the end, we present GaAsSb NW growth with a tunable Sb composition. Our results provide useful information for the controllable synthesis of multi-compositional Ga-catalyzed III-V semiconductor NWs on Si for heterogeneous integration.For the epitaxial growth of Ga-based III-V semiconductor nanowires (NWs) on Si, Ga droplets could provide a clean and compatible solution in contrast to the common Au catalyst. However, the use of Ga droplets is rather limited except for that in Ga-catalyzed GaAs NW studies in a relatively narrow growth temperature (Ts) window around 620 °C on Si. In this paper, we have investigated the two-step growth of Ga-catalyzed III-V NWs on Si (111) substrates by molecular-beam epitaxy. First, by

  16. High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xμm wavelength range

    NASA Astrophysics Data System (ADS)

    Rattunde, M.; Schulz, N.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.

    2008-02-01

    We report on recent advances in the performance of GaSb-based optically pumped semiconductor disk lasers (OPSDLs), emitting in the 2.0 - 2.3 μm wavelength range. Both barrier pumped OPSDL (using 980 nm laser diodes as pump source) and in-well pumped OPSDL (using 1.96 μm pump radiation) have been fabricated and characterized. Using alternative SiC or diamond intracavity heatspreader, multiple-watt CW-output powers have been achieved (e.g. >3W at 2.3 μm and >5W at 2.0 μm), with power efficiencies in the range of 18 % - 25 %. For an optimised resonator setup, the beam profile is close to the diffraction limit with M2 values around 1.2; and even for the highest power levels, M2 is in the range of 2-5.

  17. High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications

    SciTech Connect

    Navarro, A.; Rivera, C.; Pereiro, J.; Munoz, E.; Imer, B.; DenBaars, S. P.; Speck, J. S.

    2009-05-25

    The fabrication and characterization of metal-semiconductor-metal polarization-sensitive photodetectors based on A-plane GaN grown on R-plane sapphire substrates is reported. These photodetectors take advantage of the in-plane crystal anisotropy, which results in linear dichroism near the band gap energy. The high resistivity of the A-plane GaN material leads to extremely low dark currents. For an optimized finger spacing of 1 {mu}m, dark current density and responsivity at 30 V are 0.3 nA/mm{sup 2} and 2 A/W, respectively. A maximum polarization sensitivity ratio of 1.8 was determined. In a differential configuration, the full width at half maximum of the polarization-sensitive region is 8.5 nm.

  18. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.

    PubMed

    Yu, Xuezhe; Li, Lixia; Wang, Hailong; Xiao, Jiaxing; Shen, Chao; Pan, Dong; Zhao, Jianhua

    2016-05-19

    For the epitaxial growth of Ga-based III-V semiconductor nanowires (NWs) on Si, Ga droplets could provide a clean and compatible solution in contrast to the common Au catalyst. However, the use of Ga droplets is rather limited except for that in Ga-catalyzed GaAs NW studies in a relatively narrow growth temperature (Ts) window around 620 °C on Si. In this paper, we have investigated the two-step growth of Ga-catalyzed III-V NWs on Si (111) substrates by molecular-beam epitaxy. First, by optimizing the surface oxide, vertically aligned GaAs NWs with a high yield are obtained at Ts = 620 °C. Then a two-temperature procedure is adopted to preserve Ga droplets at lower Ts, which leads to an extension of Ts down to 500 °C for GaAs NWs. Based on this procedure, systematic morphological and structural studies for Ga-catalyzed GaAs NWs in the largest Ts range could be presented. Then within the same growth scheme, for the first time, we demonstrate Ga-catalyzed GaAs/GaSb heterostructure NWs. These GaSb NWs are axially grown on the GaAs NW sections and are pure zinc-blende single crystals. Compositional measurements confirm that the catalyst particles indeed mainly consist of Ga and GaSb sections are of high purity but with a minor composition of As. In the end, we present GaAsSb NW growth with a tunable Sb composition. Our results provide useful information for the controllable synthesis of multi-compositional Ga-catalyzed III-V semiconductor NWs on Si for heterogeneous integration.

  19. Application of real-time PCR, DGGE fingerprinting, and culture-based method to evaluate the effectiveness of intrinsic bioremediation on the control of petroleum-hydrocarbon plume.

    PubMed

    Kao, Chih-Ming; Chen, Colin S; Tsa, Fu-Yu; Yang, Kai-Hsing; Chien, Chih-Ching; Liang, Shih-Hsiung; Yang, Chin-an; Chen, Ssu Ching

    2010-06-15

    Real-time polymerase chain reaction (PCR), denaturing gradient gel electrophoresis (DGGE), and the culture-based method were applied in the intrinsic bioremediation study at a petroleum-hydrocarbon contaminated site. The genes of phenol hydroxylase (PHE), ring-hydroxylating toluene monooxygenase (RMO), naphthalene dioxygenase (NAH), toluene monooxygenase (TOL), toluene dioxygenase (TOD), and biphenyl dioxygenase (BPH4) were quantified by real-time PCR. Results show that PHE gene was detected in groundwater contaminated with benzene, toluene, ethylbenzene, xylene isomers (BTEX) and methyl tert-butyl ether (MTBE), and this indicates that intrinsic bioremediation occurred at this contaminated site. Results from DGGE analyses reveal that the petroleum-hydrocarbon plume caused the variation in microbial communities. In this study, MTBE degraders including Pseudomonas sp. NKNU01, Bacillus sp. NKNU01, Klebsiella sp. NKNU01, Enterobacter sp. NKNU01, and Enterobacter sp. NKNU02 were isolated from the contaminated groundwater using the cultured-based method. Results from MTBE biodegradation experiment show that the isolated bacteria were affected by propane. This indicates that propane may influence the metabolic pathway of MTBE by these bacteria. Knowledge and comprehension obtained from this study will be helpful in evaluating the occurrence and effectiveness of intrinsic bioremediation on the remediation of petroleum-hydrocarbon contaminated groundwater.

  20. Design of Semiconductor-Based Back Reflectors for High Voc Monolithic Multijunction Solar Cells: Preprint

    SciTech Connect

    Garcia, I.; Geisz, J.; Steiner, M.; Olson, J.; Friedman, D.; Kurtz, S.

    2012-06-01

    State-of-the-art multijunction cell designs have the potential for significant improvement before going to higher number of junctions. For example, the Voc can be substantially increased if the photon recycling taking place in the junctions is enhanced. This has already been demonstrated (by Alta Devices) for a GaAs single-junction cell. For this, the loss of re-emitted photons by absorption in the underlying layers or substrate must be minimized. Selective back surface reflectors are needed for this purpose. In this work, different architectures of semiconductor distributed Bragg reflectors (DBR) are assessed as the appropriate choice for application in monolithic multijunction solar cells. Since the photon re-emission in the photon recycling process is spatially isotropic, the effect of the incident angle on the reflectance spectrum is of central importance. In addition, the DBR structure must be designed taking into account its integration into the monolithic multijunction solar cells, concerning series resistance, growth economics, and other issues. We analyze the tradeoffs in DBR design complexity with all these requirements to determine if such a reflector is suitable to improve multijunction solar cells.

  1. Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

    PubMed

    Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

    2011-02-28

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.

  2. Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

    PubMed

    Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

    2011-02-28

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication. PMID:21369207

  3. Based on Weibull Information Fusion Analysis Semiconductors Quality the Key Technology of Manufacturing Execution Systems Reliability

    NASA Astrophysics Data System (ADS)

    Huang, Zhi-Hui; Tang, Ying-Chun; Dai, Kai

    2016-05-01

    Semiconductor materials and Product qualified rate are directly related to the manufacturing costs and survival of the enterprise. Application a dynamic reliability growth analysis method studies manufacturing execution system reliability growth to improve product quality. Refer to classical Duane model assumptions and tracking growth forecasts the TGP programming model, through the failure data, established the Weibull distribution model. Combining with the median rank of average rank method, through linear regression and least squares estimation method, match respectively weibull information fusion reliability growth curve. This assumption model overcome Duane model a weakness which is MTBF point estimation accuracy is not high, through the analysis of the failure data show that the method is an instance of the test and evaluation modeling process are basically identical. Median rank in the statistics is used to determine the method of random variable distribution function, which is a good way to solve the problem of complex systems such as the limited sample size. Therefore this method has great engineering application value.

  4. Simulation of plasma based semiconductor processing using block structured locally refined grids

    SciTech Connect

    Wake, D.D.

    1998-01-01

    We have described a new numerical method for plasma simulation. Calculations have been presented which show that the method is accurate and suggest the regimes in which the method provides savings in CPU time and memory requirements. A steady state simulation of a four centimeter domain was modeled with sheath scale (150 microns) resolution using only 40 grid points. Simulations of semiconductor processing equipment have been performed which imply the usefulness of the method for engineering applications. It is the author`s opinion that these accomplishments represent a significant contribution to plasma simulation and the efficient numerical solution of certain systems of non-linear partial differential equations. More work needs to be done, however, for the algorithm to be of practical use in an engineering environment. Despite our success at avoiding the dielectric relaxation timestep restrictions the algorithm is still conditionally stable and requires timesteps which are relatively small. This represents a prohibitive runtime for steady state solutions on high resolution grids. Current research suggests that these limitations may be overcome and the use of much larger timesteps will be possible.

  5. High-power ({gt}0.9 W cw) diffraction-limited semiconductor laser based on a fiber Bragg grating external cavity

    SciTech Connect

    Cornwell, D.M. , Jr.; Thomas, H.J.

    1997-02-01

    We have developed a high-power ({gt}0.9 W cw) diffraction-limited semiconductor laser based on a tapered semiconductor optical amplifier using a fiber Bragg grating in an external cavity configuration. Frequency-selective feedback from the fiber grating is injected into the amplifier via direct butt coupling through a single mode fiber, resulting in a spectrally stable and narrow ({lt}0.3 nm) high-power laser for solid-state laser pumping, laser remote sensing, and optical communications. {copyright} {ital 1997 American Institute of Physics.}

  6. High-frequency spin-valve effect in a ferromagnet-semiconductor-ferromagnet structure based on precession of the injected spins.

    PubMed

    Bratkovsky, A M; Osipov, V V

    2004-03-01

    A new mechanism of magnetoresistance, based on tunneling emission of spin-polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is described. The FM-S-FM structure is considered, which includes very thin heavily doped (delta-doped) layers at FM-S interfaces. At certain parameters the structure is highly sensitive at room temperature to variations of the field with frequencies up to 100 GHz. The current oscillates with the field, and its relative amplitude is determined only by the spin polarizations of FM-S junctions. PMID:15089518

  7. Physics with isotopically controlled semiconductors

    SciTech Connect

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  8. Experimental demonstration of polarization encoding quantum key distribution system based on intrinsically stable polarization-modulated units.

    PubMed

    Wang, Jindong; Qin, Xiaojuan; Jiang, Yinzhu; Wang, Xiaojing; Chen, Liwei; Zhao, Feng; Wei, Zhengjun; Zhang, Zhiming

    2016-04-18

    A proof-of-principle demonstration of a one-way polarization encoding quantum key distribution (QKD) system is demonstrated. This approach can automatically compensate for birefringence and phase drift. This is achieved by constructing intrinsically stable polarization-modulated units (PMUs) to perform the encoding and decoding, which can be used with four-state protocol, six-state protocol, and the measurement-device-independent (MDI) scheme. A polarization extinction ratio of about 30 dB was maintained for several hours over a 50 km optical fiber without any adjustments to our setup, which evidences its potential for use in practical applications. PMID:27137268

  9. Multi-gas interaction modeling on decorated semiconductor interfaces: A novel Fermi distribution-based response isotherm and the inverse hard/soft acid/base concept

    NASA Astrophysics Data System (ADS)

    Laminack, William; Gole, James

    2015-12-01

    A unique MEMS/NEMS approach is presented for the modeling of a detection platform for mixed gas interactions. Mixed gas analytes interact with nanostructured decorating metal oxide island sites supported on a microporous silicon substrate. The Inverse Hard/Soft acid/base (IHSAB) concept is used to assess a diversity of conductometric responses for mixed gas interactions as a function of these nanostructured metal oxides. The analyte conductometric responses are well represented using a combination diffusion/absorption-based model for multi-gas interactions where a newly developed response absorption isotherm, based on the Fermi distribution function is applied. A further coupling of this model with the IHSAB concept describes the considerations in modeling of multi-gas mixed analyte-interface, and analyte-analyte interactions. Taking into account the molecular electronic interaction of both the analytes with each other and an extrinsic semiconductor interface we demonstrate how the presence of one gas can enhance or diminish the reversible interaction of a second gas with the extrinsic semiconductor interface. These concepts demonstrate important considerations in the array-based formats for multi-gas sensing and its applications.

  10. High-purity 60GHz band millimeter-wave generation based on optically injected semiconductor laser under subharmonic microwave modulation.

    PubMed

    Fan, Li; Xia, Guangqiong; Chen, Jianjun; Tang, Xi; Liang, Qing; Wu, Zhengmao

    2016-08-01

    Based on an optically injected semiconductor laser (OISL) operating at period-one (P1) nonlinear dynamical state, high-purity millimeter-wave generation at 60 GHz band is experimentally demonstrated via 1/4 and 1/9 subharmonic microwave modulation (the order of subharmonic is with respect to the frequency fc of the acquired 60 GHz band millimeter-wave but not the fundamental frequency f0 of P1 oscillation). Optical injection is firstly used to drive a semiconductor laser into P1 state. For the OISL operates at P1 state with a fundamental frequency f0 = 49.43 GHz, by introducing 1/4 subharmonic modulation with a modulation frequency of fm = 15.32 GHz, a 60 GHz band millimeter-wave with central frequency fc = 61.28 GHz ( = 4fm) is experimentally generated, whose linewidth is below 1.6 kHz and SSB phase noise at offset frequency 10 kHz is about -96 dBc/Hz. For fm is varied between 13.58 GHz and 16.49 GHz, fc can be tuned from 54.32 GHz to 65.96 GHz under matched modulation power Pm. Moreover, for the OISL operates at P1 state with f0 = 45.02 GHz, a higher order subharmonic modulation (1/9) is introduced into the OISL for obtaining high-purity 60 GHz band microwave signal. With (fm, Pm) = (7.23 GHz, 13.00 dBm), a microwave signal at 65.07 GHz ( = 9fm) with a linewidth below 1.6 kHz and a SSB phase noise less than -98 dBc/Hz is experimentally generated. Also, the central frequency fc can be tuned in a certain range through adjusting fm and selecting matched Pm.

  11. High-purity 60GHz band millimeter-wave generation based on optically injected semiconductor laser under subharmonic microwave modulation.

    PubMed

    Fan, Li; Xia, Guangqiong; Chen, Jianjun; Tang, Xi; Liang, Qing; Wu, Zhengmao

    2016-08-01

    Based on an optically injected semiconductor laser (OISL) operating at period-one (P1) nonlinear dynamical state, high-purity millimeter-wave generation at 60 GHz band is experimentally demonstrated via 1/4 and 1/9 subharmonic microwave modulation (the order of subharmonic is with respect to the frequency fc of the acquired 60 GHz band millimeter-wave but not the fundamental frequency f0 of P1 oscillation). Optical injection is firstly used to drive a semiconductor laser into P1 state. For the OISL operates at P1 state with a fundamental frequency f0 = 49.43 GHz, by introducing 1/4 subharmonic modulation with a modulation frequency of fm = 15.32 GHz, a 60 GHz band millimeter-wave with central frequency fc = 61.28 GHz ( = 4fm) is experimentally generated, whose linewidth is below 1.6 kHz and SSB phase noise at offset frequency 10 kHz is about -96 dBc/Hz. For fm is varied between 13.58 GHz and 16.49 GHz, fc can be tuned from 54.32 GHz to 65.96 GHz under matched modulation power Pm. Moreover, for the OISL operates at P1 state with f0 = 45.02 GHz, a higher order subharmonic modulation (1/9) is introduced into the OISL for obtaining high-purity 60 GHz band microwave signal. With (fm, Pm) = (7.23 GHz, 13.00 dBm), a microwave signal at 65.07 GHz ( = 9fm) with a linewidth below 1.6 kHz and a SSB phase noise less than -98 dBc/Hz is experimentally generated. Also, the central frequency fc can be tuned in a certain range through adjusting fm and selecting matched Pm. PMID:27505789

  12. Is The Intrinsic Spin Hall Effect Measurable?

    NASA Astrophysics Data System (ADS)

    Yang, Zhaoyang

    2005-03-01

    Despite of the large intrinsic spin Hall conductivity in a spin- orbit coupled material predicted theoretically, we show that the intrinsic spin Hall effect in any diffusive sample is not measurable via conventional transport methods, thus the research on the intrinsic spin Hall effect is limited at the pure theoretical content. After generally defining the intrinsic and extrinsic transport coefficients, we show that the intrinsic magnetization Hall current, which is the sum of the intrinsic spin and intrinsic orbit-angular-momentum Hall currents, is identically zero. More importantly, we demonstrate that the equation of motion for the spin density does not depend on the intrinsic spin Hall current, therefore the transverse spin accumulation is solely determined by the extrinsic spin Hall current. The zero intrinsic magnetization Hall current and the independence of the spin accumulation on the intrinsic spin Hall effect lead us to conclude that the intrinsic spin Hall effect can not be assessed by conventional spin transport experiments based on the measurement of the magnetization current and the spin accumulation at the edge of the sample.

  13. Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Yang, Jingwen; Jia, Dongfang; Zhang, Zhongyuan; Chen, Jiong; Liu, Tonghui; Wang, Zhaoying; Yang, Tianxin

    2013-03-01

    Passively mode-locked fiber laser (MLFL) has been widely used in many applications, such as optical communication system, industrial production, information processing, laser weapons and medical equipment. And many efforts have been done for obtaining lasers with small size, simple structure and shorter pulses. In recent years, nonlinear polarization rotation (NPR) in semiconductor optical amplifier (SOA) has been studied and applied as a mode-locking mechanism. This kind of passively MLFL has faster operating speed and makes it easier to realize all-optical integration. In this paper, we had a thorough analysis of NPR effect in SOA. And we explained the principle of mode-locking by SOA and set up a numerical model for this mode-locking process. Besides we conducted a Matlab simulation of the mode-locking mechanism. We also analyzed results under different working conditions and several features of this mode-locking process are presented. Our simulation shows that: Firstly, initial pulse with the peak power exceeding certain threshold may be amplified and compressed, and stable mode-locking may be established. After about 25 round-trips, stable mode-locked pulse can be obtained which has peak power of 850mW and pulse-width of 780fs.Secondly, when the initial pulse-width is greater, narrowing process of pulse is sharper and it needs more round-trips to be stable. Lastly, the bias currents of SOA affect obviously the shape of mode-locked pulse and the mode-locked pulse with high peak power and narrow width can be obtained through adjusting reasonably the bias currents of SOA.

  14. Who wants to work in a rural health post? The role of intrinsic motivation, rural background and faith-based institutions in Ethiopia and Rwanda

    PubMed Central

    Serneels, Pieter; Montalvo, Jose G; Lievens, Tomas; Butera, Jean Damascene; Kidanu, Aklilu

    2010-01-01

    Abstract Objective To understand the factors influencing health workers’ choice to work in rural areas as a basis for designing policies to redress geographic imbalances in health worker distribution. Methods A cohort survey of 412 nursing and medical students in Rwanda provided unique contingent valuation data. Using these data, we performed a regression analysis to examine the determinants of future health workers’ willingness to work in rural areas as measured by rural reservation wages. These data were also combined with those from an identical survey in Ethiopia to enable a two-country analysis. Findings Health workers with higher intrinsic motivation – measured as the importance attached to helping the poor – as well as those who had grown up in a rural area and Adventists who had participated in a local bonding scheme were all significantly more willing to work in a rural area. The main result for intrinsic motivation in Rwanda was strikingly similar to the result obtained for Ethiopia and Rwanda combined. Conclusion Intrinsic motivation and rural origin play an important role in health workers’ decisions to work in a rural area, in addition to economic incentives, while faith-based institutions can also influence the decision. PMID:20461138

  15. A portable and wide energy range semiconductor-based neutron spectrometer

    NASA Astrophysics Data System (ADS)

    Hoshor, C. B.; Oakes, T. M.; Myers, E. R.; Rogers, B. J.; Currie, J. E.; Young, S. M.; Crow, J. A.; Scott, P. R.; Miller, W. H.; Bellinger, S. L.; Sobering, T. J.; Fronk, R. G.; Shultis, J. K.; McGregor, D. S.; Caruso, A. N.

    2015-12-01

    Hand-held instruments that can be used to passively detect and identify sources of neutron radiation-either bare or obscured by neutron moderating and/or absorbing material(s)-in real time are of interest in a variety of nuclear non-proliferation and health physics applications. Such an instrument must provide a means to high intrinsic detection efficiency and energy-sensitive measurements of free neutron fields, for neutrons ranging from thermal energies to the top end of the evaporation spectrum. To address and overcome the challenges inherent to the aforementioned applications, four solid-state moderating-type neutron spectrometers of varying cost, weight, and complexity have been designed, fabricated, and tested. The motivation of this work is to introduce these novel human-portable instruments by discussing the fundamental theory of their operation, investigating and analyzing the principal considerations for optimal instrument design, and evaluating the capability of each of the four fabricated spectrometers to meet the application needs.

  16. Joint amplitude and frequency demodulation analysis based on intrinsic time-scale decomposition for planetary gearbox fault diagnosis

    NASA Astrophysics Data System (ADS)

    Feng, Zhipeng; Lin, Xuefeng; Zuo, Ming J.

    2016-05-01

    Planetary gearbox vibration signals feature complex modulations, thus leading to intricate sideband structure and resulting in difficulty in fault characteristic frequency identification. Intrinsic time-scale decomposition has unique merits, such as high adaptability to changes in signals, low computational complexity, good capability to suppress mode mixing and to preserve temporal information of transients, and excellent suitability for mono-component decomposition of complex multi-component signals. In order to address the issue with planetary gearbox fault diagnosis due to the multiple modulation sources, a joint amplitude and frequency demodulation analysis method is proposed, by exploiting the merits of intrinsic time-scale decomposition. The signal is firstly decomposed into a series of mono-component proper rotational components. Then the one with its instantaneous frequency fluctuating around the gear meshing frequency or its harmonics is selected as the sensitive component. Next, Fourier transformation is applied to the instantaneous amplitude and instantaneous frequency of the sensitive component to obtain the amplitude and frequency demodulated spectra respectively. Finally, a planetary gearbox fault is diagnosed by matching the peaks in the amplitude and frequency demodulated spectra with the theoretical gear fault characteristic frequencies. The proposed method is illustrated by a numerical simulated signal, and further validated by lab experimental signals of a planetary gearbox. The localized faults of sun, planet and ring gears are diagnosed, showing the effectiveness of the method.

  17. Materials and device design with III-V and II-VI compound-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Sato, Kazunori

    2002-03-01

    Since the discovery of the carrier induced ferromagnetism in (In, Mn)As and (Ga, Mn)As, diluted magnetic semiconductors (DMS) have been of much interest from the industrial viewpoint because of their potentiality as a new functional material (spintronics). In this paper, the magnetism in DMS is investigated based on the first principles calculations, and materials and device design with the DMS is proposed toward the spintronics. The electronic structure is calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation based on the local spin density approximation. We calculate the electronic structure of ferromagnetic and spin-glass DMS, and total energy difference between them is calculated to estimate whether the ferromagnetic state is stable or not. It is shown that V-, Cr- and Mn-doped III-V compounds, V- and Cr-doped II-VI compounds and Fe-, Co- and Ni-doped ZnO are promising candidates for a high-Curie temperature ferromagnet. A chemical trend in the ferromagnetism is well understood based on the double exchange mechanism [1]. Based upon this material design, some prototypes of the spintronics devices, such as a spin-FET, a photo-induced-magnetic memory and a coherent-spin-infection device, are proposed. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555, 40 (2001) L334, L485 and L651.

  18. Biomimetic fiber mesh scaffolds based on gelatin and hydroxyapatite nano-rods: Designing intrinsic skills to attain bone reparation abilities.

    PubMed

    Sartuqui, Javier; Gravina, A Noel; Rial, Ramón; Benedini, Luciano A; Yahia, L'Hocine; Ruso, Juan M; Messina, Paula V

    2016-09-01

    Intrinsic material skills have a deep effect on the mechanical and biological performance of bone substitutes, as well as on its associated biodegradation properties. In this work we have manipulated the preparation of collagenous derived fiber mesh frameworks to display a specific composition, morphology, open macroporosity, surface roughness and permeability characteristics. Next, the effect of the induced physicochemical attributes on the scaffold's mechanical behavior, bone bonding potential and biodegradability were evaluated. It was found that the scaffold microstructure, their inherent surface roughness, and the compression strength of the gelatin scaffolds can be modulated by the effect of the cross-linking agent and, essentially, by mimicking the nano-scale size of hydroxyapatite in natural bone. A clear effect of bioactive hydroxyapatite nano-rods on the scaffolds skills can be appreciated and it is greater than the effect of the cross-linking agent, offering a huge perspective for the upcoming progress of bone implant technology.

  19. Probing the intrinsic failure mechanism of fluorinated amorphous carbon film based on the first-principles calculations

    NASA Astrophysics Data System (ADS)

    Zhang, Ren-Hui; Wang, Li-Ping; Lu, Zhi-Bin

    2015-03-01

    Fluorinated amorphous carbon films exhibit superlow friction under vacuum, but are prone to catastrophic failure. Thus far, the intrinsic failure mechanism remains unclear. A prevailing view is that the failure of amorphous carbon film results from the plastic deformation of substrates or strong adhesion between two contacted surfaces. In this paper, using first-principles and molecular dynamics methodology, combining with compressive stress-strain relation, we firstly demonstrate that the plastic deformation induces graphitization resulting in strong adhesion between two contacted surfaces under vacuum, which directly corresponds to the cause of the failure of the films. In addition, sliding contact experiments are conducted to study tribological properties of iron and fluorinated amorphous carbon surfaces under vacuum. The results show that the failure of the film is directly attributed to strong adhesion resulting from high degree of graphitization of the film, which are consistent with the calculated results.

  20. Biomimetic fiber mesh scaffolds based on gelatin and hydroxyapatite nano-rods: Designing intrinsic skills to attain bone reparation abilities.

    PubMed

    Sartuqui, Javier; Gravina, A Noel; Rial, Ramón; Benedini, Luciano A; Yahia, L'Hocine; Ruso, Juan M; Messina, Paula V

    2016-09-01

    Intrinsic material skills have a deep effect on the mechanical and biological performance of bone substitutes, as well as on its associated biodegradation properties. In this work we have manipulated the preparation of collagenous derived fiber mesh frameworks to display a specific composition, morphology, open macroporosity, surface roughness and permeability characteristics. Next, the effect of the induced physicochemical attributes on the scaffold's mechanical behavior, bone bonding potential and biodegradability were evaluated. It was found that the scaffold microstructure, their inherent surface roughness, and the compression strength of the gelatin scaffolds can be modulated by the effect of the cross-linking agent and, essentially, by mimicking the nano-scale size of hydroxyapatite in natural bone. A clear effect of bioactive hydroxyapatite nano-rods on the scaffolds skills can be appreciated and it is greater than the effect of the cross-linking agent, offering a huge perspective for the upcoming progress of bone implant technology. PMID:27220014

  1. Contribution of intrinsic motoneuron properties to discharge hysteresis and its estimation based on paired motor unit recordings: a simulation study.

    PubMed

    Powers, Randall K; Heckman, C J

    2015-07-01

    Motoneuron activity is strongly influenced by the activation of persistent inward currents (PICs) mediated by voltage-gated sodium and calcium channels. However, the amount of PIC contribution to the activation of human motoneurons can only be estimated indirectly. Simultaneous recordings of pairs of motor units have been used to provide an estimate of the PIC contribution by using the firing rate of the lower threshold unit to provide an estimate of the common synaptic drive to both units, and the difference in firing rate (ΔF) of this lower threshold unit at recruitment and de-recruitment of the higher threshold unit to estimate the PIC contribution to activation of the higher threshold unit. It has recently been suggested that a number of factors other than PIC can contribute to ΔF values, including mechanisms underlying spike frequency adaptation and spike threshold accommodation. In the present study, we used a set of compartmental models representing a sample of 20 motoneurons with a range of thresholds to investigate how several different intrinsic motoneuron properties can potentially contribute to variations in ΔF values. We drove the models with linearly increasing and decreasing noisy conductance commands of different rate of rise and duration and determined the influence of different intrinsic mechanisms on discharge hysteresis (the difference in excitatory drive at recruitment and de-recruitment) and ΔF. Our results indicate that, although other factors can contribute, variations in discharge hysteresis and ΔF values primarily reflect the contribution of dendritic PICs to motoneuron activation.

  2. The Intrinsically Disordered Regions of the Drosophila melanogaster Hox Protein Ultrabithorax Select Interacting Proteins Based on Partner Topology

    PubMed Central

    Hsiao, Hao-Ching; Gonzalez, Kim L.; Catanese, Daniel J.; Jordy, Kristopher E.; Matthews, Kathleen S.; Bondos, Sarah E.

    2014-01-01

    Interactions between structured proteins require a complementary topology and surface chemistry to form sufficient contacts for stable binding. However, approximately one third of protein interactions are estimated to involve intrinsically disordered regions of proteins. The dynamic nature of disordered regions before and, in some cases, after binding calls into question the role of partner topology in forming protein interactions. To understand how intrinsically disordered proteins identify the correct interacting partner proteins, we evaluated interactions formed by the Drosophila melanogaster Hox transcription factor Ultrabithorax (Ubx), which contains both structured and disordered regions. Ubx binding proteins are enriched in specific folds: 23 of its 39 partners include one of 7 folds, out of the 1195 folds recognized by SCOP. For the proteins harboring the two most populated folds, DNA-RNA binding 3-helical bundles and α-α superhelices, the regions of the partner proteins that exhibit these preferred folds are sufficient for Ubx binding. Three disorder-containing regions in Ubx are required to bind these partners. These regions are either alternatively spliced or multiply phosphorylated, providing a mechanism for cellular processes to regulate Ubx-partner interactions. Indeed, partner topology correlates with the ability of individual partner proteins to bind Ubx spliceoforms. Partners bind different disordered regions within Ubx to varying extents, creating the potential for competition between partners and cooperative binding by partners. The ability of partners to bind regions of Ubx that activate transcription and regulate DNA binding provides a mechanism for partners to modulate transcription regulation by Ubx, and suggests that one role of disorder in Ubx is to coordinate multiple molecular functions in response to tissue-specific cues. PMID:25286318

  3. Intrinsic Josephson junctions in the iron-based multi-band superconductor (V2Sr4O6)Fe2As2

    NASA Astrophysics Data System (ADS)

    Moll, Philip J. W.; Zhu, Xiyu; Cheng, Peng; Wen, Hai-Hu; Batlogg, Bertram

    2014-09-01

    In layered superconductors, Josephson junctions may be formed within the unit cell as a result of sufficiently low inter-layer coupling. These intrinsic Josephson junction (iJJ) systems have attracted considerable interest for their application potential in quantum computing as well as efficient sources of THz radiation, closing the famous `THz gap'. So far, iJJ have been demonstrated in single-band, copper-based high-Tc superconductors, mainly in Bi-Sr-Ca-Cu-O (refs , , ). Here we report clear experimental evidence for iJJ behaviour in the iron-based superconductor (V2Sr4O6)Fe2As2. The intrinsic junctions are identified by periodic oscillations of the flux-flow voltage on increasing a well-aligned in-plane magnetic field. The periodicity is explained by commensurability effects between the Josephson vortex lattice and the crystal structure, which is a hallmark signature of Josephson vortices confined into iJJ stacks. This finding adds the pnictide (V2Sr4O6)Fe2As2 to the copper-based iJJ materials of interest for Josephson junction applications. In particular, novel devices based on multi-band Josephson coupling may be realized.

  4. CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters.

    PubMed

    Jin, Weifeng; Zhang, Kun; Gao, Zhiwei; Li, Yanping; Yao, Li; Wang, Yilun; Dai, Lun

    2015-06-24

    Novel CdSe nanowire (NW)-based flexible devices, including Schottky diodes, metal-semiconductor field-effect transistors (MESFETs), and inverters, have been fabricated and investigated. The turn-on voltage of a typical Schottky diode is about 0.7 V, and the rectification ratio is larger than 1 × 10(7). The threshold voltage, on/off current ratio, subthreshold swing, and peak transconductance of a typical MESFET are about -0.3 V, 4 × 10(5), 78 mV/dec, and 2.7 μS, respectively. The inverter, constructed with two MESFETs, exhibits clear inverting behavior with the gain to be about 28, 34, and 38, at the supply voltages (V(DD)) of 3, 5, and 7 V, respectively. The inverter also shows good dynamic behavior. The rising and falling times of the output signals are about 0.18 and 0.09 ms, respectively, under 1000 Hz square wave signals input. The performances of the flexible devices are stable and reliable under different bending conditions. Our work demonstrates these flexible NW-based Schottky diodes, MESFETs, and inverters are promising candidate components for future portable transparent nanoelectronic devices.

  5. A urea biosensor based on pH-sensitive Sm2TiO5 electrolyte-insulator-semiconductor.

    PubMed

    Pan, Tung-Ming; Huang, Ming-De; Lin, Wan-Ying; Wu, Min-Hsien

    2010-06-11

    A urea biosensor based on pH-sensitive Sm(2)TiO(5) electrolyte-insulator-semiconductor (EIS) has been described. We used X-ray diffraction, Auger electron spectroscopy, and atomic force microscopy to investigate the structural and morphological features of high-k Sm(2)TiO(5) sensing membranes that had been subjected to annealing at different temperatures. The EIS device incorporating a high-k Sm(2)TiO(5) sensing film that had been annealed at 900 degrees C exhibited good sensing characteristics, including a high sensitivity of 60.5 mV/pH (in solutions from pH 2 to 12), a small hysteresis voltage of 2.72 mV (in the pH loop 7-->4-->7-->10-->7), and a low drift rate of 1.15 mV h(-1) (in the buffer solution at pH 7). The Sm(2)TiO(5) EIS device also showed a high selective response towards H(+). This improvement can be attributed to the small number of crystal defects and the large surface roughness. In addition, the urea biosensor based on pH-sensitive EIS incorporating a Sm(2)TiO(5) sensing membrane annealed at 900 degrees C allowed the potentiometric analysis of urea, at concentrations ranging from 0.1 to 32 mM, with a sensitivity of 72.85 mV/purea.

  6. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    SciTech Connect

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  7. Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

    NASA Astrophysics Data System (ADS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Regan, William Raymond; Zettl, Alex

    2015-03-01

    We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.

  8. Intrinsic Analysis Training Manual.

    ERIC Educational Resources Information Center

    Gow, Doris T.

    This manual is for the training of linking agents between Education R&D and schools and for training teachers in the process of intrinsic analysis of curriculum materials. Intrinsic analysis means analysis of the instruction or process through examination of the materials, or artifacts, including teacher and student materials, developer's…

  9. Continuous Monitoring of Electrical Activity of Pancreatic β-Cells Using Semiconductor-Based Biosensing Devices

    NASA Astrophysics Data System (ADS)

    Sakata, Toshiya; Sugimoto, Haruyo

    2011-02-01

    The electrical activity of rat pancreatic β-cells caused by introduction of glucose was directly and noninvasively detected using a cell-based field-effect transistor (FET). Rat pancreatic β-cells were adhered to the gate sensing surface of the cell-based FET. The principle of cell-based FETs is based on the detection of charge density changes such as pH variation at the interface between the cell membrane and the gate surface. The gate surface potential of pancreatic β-cell-based FET increased continuously after introduction of glucose at a high concentration of 10 mg/ml. This result indicates that the electrical activity of β-cells was successfully monitored on the basis of pH changes, i.e., increase in the concentration of hydrogen ions, at the cell/gate interface using the pancreatic β-cell-based FET. We assume that the pH variation based on hydrogen ion accumulation at the cell/gate interface was induced by activation of respiration accompanied by insulin secretion process following glucose addition. The platform based on the field-effect devices is suitable for application in a real-time, noninvasive, and label-free detection system for cell functional analyses.

  10. Materials Science and Technology, Volume 4, Electronic Structure and Properties of Semiconductors

    NASA Astrophysics Data System (ADS)

    Schröter, Wolfgang

    1996-12-01

    This volume spans the field of semiconductor physics, with particular emphasis on concepts relevant to semiconductor technology. From the Contents: Lannoo: Band Theory Applied to Semiconductors. Ulbrich: Optical Properties and Charge Transport. Watkins: Intrinsic Point Defects in Semiconductors. Feichtinger: Deep Centers in Semiconductors. Gösele/Tan: Equilibria, Nonequilibria, Diffusion, and Precipitation. Alexander/Teichler: Dislocations. Thibault/Rouvière/Bourret: Grain Boundaries in Semiconductors. Ourmazd/Hull/Tung: Interfaces. Chang: The Hall Effect in Quantum Wires. Street/Winer: Material Properties of Hydrogenated Amorphous Silicon. Schröter/Seibt/Gilles: High-Temperature Properties of 3d Transition Elements in Silicon.

  11. A Radio-Based Search finds no evidence for intrinsically weak TGFs in the Fermi GBM Data

    NASA Astrophysics Data System (ADS)

    Briggs, Michael; Omar, Kareem

    2016-04-01

    We analyze gamma-ray data from the Fermi Gamma-ray Burst Monitor (GBM) around the times of VLF radio sferics. The gamma-ray photons are time-aligned to the times of radio sferics, with correction for the light travel time to Fermi, and accumulated. Gamma-ray photons from TGFs already known from the standard GBM TGF offline search are excluded from the accumulation. We use sferic signals from both the World Wide Lightning Location Network (WWLLN) and the Earth Networks Total Lightning Network (ENTLN). No excess signal is found in the accumulation of the gamma-ray data for sferics within 400 km of the Fermi nadir. However, an excess of gamma-rays is found in the co-aligned signal for sferics between 400 and 800 km of the Fermi nadir. Our interpretation of this distance-dependent non-detection / detection pattern is that the standard GBM offline search for TGFs is missing some TGFs that are weak at Fermi due to distance from Fermi and that there is no evidence for a population of TGFs that are intrinsically fainter than the threshold of the search.

  12. A GIS-based DRASTIC model for assessing intrinsic groundwater vulnerability in northeastern Missan governorate, southern Iraq

    NASA Astrophysics Data System (ADS)

    Al-Abadi, Alaa M.; Al-Shamma'a, Ayser M.; Aljabbari, Mukdad H.

    2014-08-01

    In this study, intrinsic groundwater vulnerability for the shallow aquifer in northeastern Missan governorate, south of Iraq is evaluated using commonly used DRASTIC model in framework of GIS environment. Preparation of DRASTIC parameters is attained through gathering data from different sources including field survey, geological and meteorological data, a digital elevation model DEM of the study area, archival database, and published research. The different data used to build DRASTIC model are arranged in a geospatial database using spatial analyst extension of ArcGIS 10.2 software. The obtained results related to the vulnerability to general contaminants show that the study area is characterized by two vulnerability zones: low and moderate. Ninety-four percentage (94 %) of the study area has a low class of groundwater vulnerability to contamination, whereas a total of (6 %) of the study area has moderate vulnerability. The pesticides DRASTIC index map shows that the study area is also characterized by two zones of vulnerability: low and moderate. The DRASTIC map of this version clearly shows that small percentage (13 %) of the study area has low vulnerability to contamination, and most parts have moderate vulnerability (about 87 %). The final results indicate that the aquifer system in the interested area is relatively protected from contamination on the groundwater surface. To mitigate the contamination risks in the moderate vulnerability zones, a protective measure must be put before exploiting the aquifer and before comprehensive agricultural activities begin in the area.

  13. HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

    NASA Astrophysics Data System (ADS)

    Kim, Hyoung-Sub; Ok, I.; Zhang, M.; Zhu, F.; Park, S.; Yum, J.; Zhao, H.; Lee, Jack C.; Majhi, Prashant

    2008-09-01

    In this letter, we present our experimental results of HfO2-based n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and metal-oxide-semiconductor capacitors (MOSCAPs) on indium phosphide (InP) substrates using a thin germanium (Ge) interfacial passivation layer (IPL). We found that MOSCAPs on n-InP substrates showed good C-V characteristics such as a small capacitance equivalent thickness (14Å ), a small frequency dispersion (<10% and <200mV), and a low dielectric leakage current (˜5×10-4A/cm2 at Vg=1.5V), whereas MOSCAPs on p-InP exhibited poor characteristics, implying severe Fermi level pinning. It was also found that InP was more vulnerable to a high temperature process such that C-V curves showed a characteristic "bump" and inversion capacitance at relatively high frequencies. From n-channel MOSFETs on a semi-insulating InP substrate using Ge IPL, HfO2, and TaN gate electrodes, excellent electrical characteristics such as a large transconductance (9.3mS /mm) and large drain currents (12.3mA/mm at Vd=2V and Vg=Vth+2V) were achieved, which are comparable to other works.

  14. Device modeling of perovskite solar cells based on structural similarity with thin film inorganic semiconductor solar cells

    NASA Astrophysics Data System (ADS)

    Minemoto, Takashi; Murata, Masashi

    2014-08-01

    Device modeling of CH3NH3PbI3-xCl3 perovskite-based solar cells was performed. The perovskite solar cells employ a similar structure with inorganic semiconductor solar cells, such as Cu(In,Ga)Se2, and the exciton in the perovskite is Wannier-type. We, therefore, applied one-dimensional device simulator widely used in the Cu(In,Ga)Se2 solar cells. A high open-circuit voltage of 1.0 V reported experimentally was successfully reproduced in the simulation, and also other solar cell parameters well consistent with real devices were obtained. In addition, the effect of carrier diffusion length of the absorber and interface defect densities at front and back sides and the optimum thickness of the absorber were analyzed. The results revealed that the diffusion length experimentally reported is long enough for high efficiency, and the defect density at the front interface is critical for high efficiency. Also, the optimum absorber thickness well consistent with the thickness range of real devices was derived.

  15. Whole genome semiconductor based sequencing of farmed European sea bass (Dicentrarchus labrax) Mediterranean genetic stocks using a DNA pooling approach.

    PubMed

    Bertolini, Francesca; Geraci, Claudia; Schiavo, Giuseppina; Sardina, Maria Teresa; Chiofalo, Vincenzo; Fontanesi, Luca

    2016-08-01

    European sea bass (Dicentrarchus labrax) is an important marine species for commercial and sport fisheries and aquaculture production. Recently, the European sea bass genome has been sequenced and assembled. This resource can open new opportunities to evaluate and monitor variability and identify variants that could contribute to the adaptation to farming conditions. In this work, two DNA pools constructed from cultivated European sea bass were sequenced using a next generation semiconductor sequencing approach based on Ion Proton sequencer. Using the first draft version of the D. labrax genome as reference, sequenced reads obtained a total of about 1.6 million of single nucleotide polymorphisms (SNPs), spread all over the chromosomes. Transition/transversion (Ti/Tv) was equal to 1.28, comparable to what was already reported in Salmon species. A pilot homozygosity analysis across the D. labrax genome using DNA pool sequence datasets indicated that this approach can identify chromosome regions with putative signatures of selection, including genes involved in ion transport and chloride channel functions, amino acid metabolism and circadian clock and related neurological systems. This is the first study that reported genome wide polymorphisms in a fish species obtained with the Ion Proton sequencer. Moreover, this study provided a methodological approach for selective sweep analysis in this species. PMID:27020381

  16. New time-space-time optical packet switching node based on nonlinear polarization rotation of a semiconductor optical amplifier.

    PubMed

    Yongjun, Wang; Qinghua, Tian; Zhi, Wang; Xiaoqing, Zhu; Chen, Wu; Chao, Shang; Xin, Xiangjun

    2016-03-10

    In this paper, we establish a simple model to analyze the semiconductor optical amplifier's (SOA) nonlinear polarization rotation (NPR) and acquire the variable curves of phase difference between TE and TM modes with bias current, pump power, probe power, and linewidth enhancement factor (LEF). The results indicate that the optical switch based on the SOA's NPR can be realized by changing the pump's optical power and the main operating parameters, such as bias current and hold beam power, and then the pump power can be determined. On this basis, a time-space-time (T-S-T) optical packet switching node is proposed, in which the SOA's NPR switch is the basic element. Then, the T-S and S-T experimental systems are set up, and the experimental results demonstrate that the proposed switch scheme can implement the optical switching function in accordance with the routing requirement. The signal-to-noise ratio (SNR) exceeds 20 dB, and the extinction ratio (ER) is more than 10 dB after being delayed and switched in the node.

  17. Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier.

    PubMed

    Chi, Mingjun; Jensen, Ole Bjarlin; Holm, Jesper; Pedersen, Christian; Andersen, Peter Eskil; Erbert, Götz; Sumpf, Bernd; Petersen, Paul Michael

    2005-12-26

    A high-power narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The external cavity laser system uses a new tapered amplifier with a super-large optical-cavity (SLOC) design that leads to improved performance of the external cavity diode lasers. The laser system is tunable over a 29 nm range centered at 802 nm. As high as 1.95 W output power is obtained at 803.84 nm, and an output power above 1.5 W is achieved from 793 to 812 nm at operating current of 3.0 A. The emission linewidth is below 0.004 nm and the beam quality factor M2 is below 1.3 over the 29 nm tunable range. As an example of application, the laser system is used as a pump source for the generation of 405 nm blue light by single-pass frequency doubling in a periodically poled KTiOPO4. An output power of 24 mW at 405 nm, corresponding to a conversion efficiency of 0.83%/W is attained. PMID:19503273

  18. The prediction of hole mobility in organic semiconductors and its calibration based on the grain-boundary effect.

    PubMed

    Park, Jin Woo; Lee, Kyu Il; Choi, Youn-Suk; Kim, Jung-Hwa; Jeong, Daun; Kwon, Young-Nam; Park, Jong-Bong; Ahn, Ho Young; Park, Jeong-Il; Lee, Hyo Sug; Shin, Jaikwang

    2016-08-01

    A new reliable computational model to predict the hole mobility of poly-crystalline organic semiconductors in thin films was developed. Site energy differences and transfer integrals in crystalline morphologies of organic molecules were obtained from quantum chemical calculations, in which periodic boundary conditions were efficiently applied to capture the interactions with the surrounding molecules in the crystalline organic layer. Then the parameters were employed in kinetic Monte Carlo (kMC) simulations to estimate the carrier mobility. Carrier transport in multiple directions has been considered in the kMC simulation to mimic poly-crystalline characteristics under thin-film conditions. Furthermore, the calculated mobility was corrected using a calibration equation based on microscopy images of the thin films to take the effect of grain boundaries into account. As a result, good agreement was observed between the predicted and measured hole mobility values for 21 molecular species: the coefficient of determination (R(2)) was estimated to be 0.83 and the mean absolute error was 1.32 cm(2) V(-1) s(-1). This numerical approach can be applied to any molecules for which crystal structures are available and will provide a rapid and precise way of predicting device performance. PMID:27425259

  19. Intrinsically motivated action-outcome learning and goal-based action recall: a system-level bio-constrained computational model.

    PubMed

    Baldassarre, Gianluca; Mannella, Francesco; Fiore, Vincenzo G; Redgrave, Peter; Gurney, Kevin; Mirolli, Marco

    2013-05-01

    Reinforcement (trial-and-error) learning in animals is driven by a multitude of processes. Most animals have evolved several sophisticated systems of 'extrinsic motivations' (EMs) that guide them to acquire behaviours allowing them to maintain their bodies, defend against threat, and reproduce. Animals have also evolved various systems of 'intrinsic motivations' (IMs) that allow them to acquire actions in the absence of extrinsic rewards. These actions are used later to pursue such rewards when they become available. Intrinsic motivations have been studied in Psychology for many decades and their biological substrates are now being elucidated by neuroscientists. In the last two decades, investigators in computational modelling, robotics and machine learning have proposed various mechanisms that capture certain aspects of IMs. However, we still lack models of IMs that attempt to integrate all key aspects of intrinsically motivated learning and behaviour while taking into account the relevant neurobiological constraints. This paper proposes a bio-constrained system-level model that contributes a major step towards this integration. The model focusses on three processes related to IMs and on the neural mechanisms underlying them: (a) the acquisition of action-outcome associations (internal models of the agent-environment interaction) driven by phasic dopamine signals caused by sudden, unexpected changes in the environment; (b) the transient focussing of visual gaze and actions on salient portions of the environment; (c) the subsequent recall of actions to pursue extrinsic rewards based on goal-directed reactivation of the representations of their outcomes. The tests of the model, including a series of selective lesions, show how the focussing processes lead to a faster learning of action-outcome associations, and how these associations can be recruited for accomplishing goal-directed behaviours. The model, together with the background knowledge reviewed in the paper

  20. SEMICONDUCTOR TECHNOLOGY: Wafer level hermetic packaging based on Cu-Sn isothermal solidification technology

    NASA Astrophysics Data System (ADS)

    Yuhan, Cao; Le, Luo

    2009-08-01

    A novel wafer level bonding method based on Cu-Sn isothermal solidification technology is established. A multi-layer sealing ring and the bonding processing are designed, and the amount of solder and the bonding parameters are optimized based on both theoretical and experimental results. Verification shows that oxidation of the solder layer, voids and the scalloped-edge appearance of the Cu6Sn5 phase are successfully avoided. An average shear strength of 19.5 MPa and an excellent leak rate of around 1.9 × 10-9 atm cc/s are possible, meeting the demands of MIL-STD-883E.

  1. SEMICONDUCTOR TECHNOLOGY: Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories

    NASA Astrophysics Data System (ADS)

    Jianxiu, Su; Xiqu, Chen; Jiaxi, Du; Renke, Kang

    2010-05-01

    Distribution forms of abrasives in the chemical mechanical polishing (CMP) process are analyzed based on experimental results. Then the relationships between the wafer, the abrasive and the polishing pad are analyzed based on kinematics and contact mechanics. According to the track length of abrasives on the wafer surface, the relationships between the material removal rate and the polishing velocity are obtained. The analysis results are in accord with the experimental results. The conclusion provides a theoretical guide for further understanding the material removal mechanism of wafers in CMP.

  2. Synchronous semiconductor memory device

    SciTech Connect

    Onno, C.; Hirata, M.

    1989-11-21

    This patent describes a synchronous semiconductor memory device. It comprises: first latch means for latching a write command in synchronism with clock signal; second latch means for latching a write data in synchronism with the clock signal and for outputting two write process signals based on the write data latched thereby; pulse generating means for generating an internal write pulse signal based on the write command latched by the first latch means. The internal write pulse signal having a semiconductor memory device; write control means supplied with the internal write pulse signal and the write process signals for controlling write and read operations of the synchronous semiconductor memory device; memory means for storing the write data latched by the second latch means; and noise preventing means coupled to the second latch means and the write control means for supplying the write process signals to the write control means only in the write mode responsive to the internal write pulse signal and for setting the write process signals to fixed potentials during a time other than the write mode.

  3. A population-based model of the nonlinear dynamics of the thalamocortical feedback network displays intrinsic oscillations in the spindling (7-14 Hz) range.

    PubMed

    Yousif, Nada A B; Denham, Michael

    2005-12-01

    The thalamocortical network is modelled using the Wilson-Cowan equations for neuronal population activity. We show that this population model with biologically derived parameters possesses intrinsic nonlinear oscillatory dynamics, and that the frequency of oscillation lies within the spindle range. Spindle oscillations are an early sleep oscillation characterized by high-frequency bursts of action potentials followed by a period of quiescence, at a frequency of 7-14 Hz. Spindles are generally regarded as being generated by intrathalamic circuitry, as decorticated thalamic slices and the isolated thalamic reticular nucleus exhibit spindles. However, the role of cortical feedback has been shown to regulate and synchronize the oscillation. Previous modelling studies have mainly used conductance-based models and hence the mechanism relied upon the inclusion of ionic currents, particularly the T-type calcium current. Here we demonstrate that spindle-frequency oscillatory activity can also arise from the nonlinear dynamics of the thalamocortical circuit, and we use bifurcation analysis to examine the robustness of this oscillation in terms of the functional range of the parameters used in the model. The results suggest that the thalamocortical circuit has intrinsic nonlinear population dynamics which are capable of providing robust support for oscillatory activity within the frequency range of spindle oscillations.

  4. From computational modelling of the intrinsic apoptosis pathway to a systems-based analysis of chemotherapy resistance: achievements, perspectives and challenges in systems medicine.

    PubMed

    Würstle, M L; Zink, E; Prehn, J H M; Rehm, M

    2014-01-01

    Our understanding of the mitochondrial or intrinsic apoptosis pathway and its role in chemotherapy resistance has increased significantly in recent years by a combination of experimental studies and mathematical modelling. This combined approach enhanced the quantitative and kinetic understanding of apoptosis signal transduction, but also provided new insights that systems-emanating functions (i.e., functions that cannot be attributed to individual network components but that are instead established by multi-component interplay) are crucial determinants of cell fate decisions. Among these features are molecular thresholds, cooperative protein functions, feedback loops and functional redundancies that provide systems robustness, and signalling topologies that allow ultrasensitivity or switch-like responses. The successful development of kinetic systems models that recapitulate biological signal transduction observed in living cells have now led to the first translational studies, which have exploited and validated such models in a clinical context. Bottom-up strategies that use pathway models in combination with higher-level modelling at the tissue, organ and whole body-level therefore carry great potential to eventually deliver a new generation of systems-based diagnostic tools that may contribute to the development of personalised and predictive medicine approaches. Here we review major achievements in the systems biology of intrinsic apoptosis signalling, discuss challenges for further model development, perspectives for higher-level integration of apoptosis models and finally discuss requirements for the development of systems medical solutions in the coming years.

  5. SEMICONDUCTOR INTEGRATED CIRCUITS: Design for an IO block array in a tile-based FPGA

    NASA Astrophysics Data System (ADS)

    Guangxin, Ding; Lingdou, Chen; Zhongli, Liu

    2009-08-01

    A design for an IO block array in a tile-based FPGA is presented. Corresponding with the characteristics of the FPGA, each IO cell is composed of a signal path, local routing pool and configurable input/output buffers. Shared programmable registers in the signal path can be configured for the function of JTAG, without specific boundary scan registers/latches, saving layout area. The local routing pool increases the flexibility of routing and the routability of the whole FPGA. An auxiliary power supply is adopted to increase the performance of the IO buffers at different configured IO standards. The organization of the IO block array is described in an architecture description file, from which the array layout can be accomplished through use of an automated layout assembly tool. This design strategy facilitates the design of FPGAs with different capacities or architectures in an FPGA family series. The bond-out schemes of the same FPGA chip in different packages are also considered. The layout is based on SMIC 0.13 μm logic 1P8M salicide 1.2/2.5 V CMOS technology. Our performance is comparable with commercial SRAM-based FPGAs which use a similar process.

  6. CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    1998-01-01

    A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film is built up upon a semiconductor-based material and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component.

  7. Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions

    SciTech Connect

    Lam, Kai Tak; Seol, Gyungseon; Guo, Jing

    2014-07-07

    A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The transistor shows excellent saturation of output I-V characteristics due to drain-induced depletion and lack of tunneling barrier layers. The subthreshold slope could be below the thermionic limit due to band filtering as the switching mechanism. The atomically thin vertical PN heterojunction can be electrostatically modulated from a type II heterojunction to a broken bandgap alignment, which is preferred for maximizing the on-current.

  8. Study of the properties of silicon-based semiconductor converters for betavoltaic cells

    SciTech Connect

    Polikarpov, M. A.; Yakimov, E. B.

    2015-06-15

    Silicon p-i-n diodes are studied in a scanning electron microscope under conditions simulating the β-radiation from a radioactive Ni{sup 63} source with an activity of 10 mCi/cm{sup 2}. The attainable parameters of β-voltaic cells with a source of this kind and a silicon-based converter of β-particle energy to electric current are estimated. It is shown that the power of elements of this kind can reach values of ∼10 nW/cm{sup 2} even for a cell with an area of one centimeter, which is rather close to the calculated value.

  9. Highly Effective Polarized Electron Sources Based on Strained Semiconductor Superlattice with Distributed Bragg Reflector

    SciTech Connect

    Gerchikov, L.G.; Aulenbacher, K.; Clendenin, J.E.; Kuz'michev, V.V.; Mamaev, Yu.A.; Maruyama, T.; Mikhrin, V.S.; Roberts, J.S.; Utstinov, V.M.; Vasiliev, D.A.; Vasiliev, A.P.; Yashin, Yu.P.; Zhukov, A.E.; /St. Petersburg Polytechnic Inst. /Mainz U., Inst. Kernphys. /SLAC /Ioffe Phys. Tech. Inst. /Sheffield U.

    2007-11-28

    Resonance enhancement of the quantum efficiency of new polarized electron photocathodes based on a short-period strained superlattice structures is reported. The superlattice is a part of an integrated Fabry-Perot optical cavity. We demonstrate that the Fabry-Perot resonator enhances the quantum efficiency by the order of magnitude in the wavelength region of the main polarization maximum. The high structural quality implied by these results points to the very promising application of these photocathodes for spin-polarized electron sources.

  10. Effects of degradation on the performance of a triphenylene based liquid crystal organic semiconductor

    NASA Astrophysics Data System (ADS)

    Dawson, Nathan J.; Patrick, Michael S.; Peters, Kyle; Paul, Sanjoy; Ellman, Brett; Matthews, Rachael; Pentzer, Emily; Twieg, Robert J.; Singer, Kenneth D.

    2015-09-01

    We report on time-of-flight (TOF) hole mobility measurements in an aged discotic columnar liquid crystal, Hexakis(pentyloxy)triphenylene (HAT5). The experimental data was fit to an interfacial trapping model based on Van de Walle's approximations. The theory accurately reproduces the TOF transients of delayed charge release near the optically excited material/electrode interface. Interfacial trapping appears only in the aged materials, but the bulk mobility is the same as that of the pristine material. We also discuss preliminary results of TOF photocurrent transients of HAT5 exposed to ozone.

  11. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    SciTech Connect

    Mok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Barbolla, J.; Srinivasan, M.P.

    2005-08-15

    We introduce a model for damage accumulation up to amorphization, based on the ion-implant damage structures commonly known as amorphous pockets. The model is able to reproduce the silicon amorphous-crystalline transition temperature for C, Si, and Ge ion implants. Its use as an analysis tool reveals an unexpected bimodal distribution of the defect population around a characteristic size, which is larger for heavier ions. The defect population is split in both size and composition, with small, pure interstitial and vacancy clusters below the characteristic size, and amorphous pockets with a balanced mixture of interstitials and vacancies beyond that size.

  12. PLGA-PLL-PEG-Tf-based targeted nanoparticles drug delivery system enhance antitumor efficacy via intrinsic apoptosis pathway.

    PubMed

    Bao, Wen; Liu, Ran; Wang, Yonglu; Wang, Fei; Xia, Guohua; Zhang, Haijun; Li, Xueming; Yin, Haixiang; Chen, Baoan

    2015-01-01

    Chemotherapy offers a systemic cancer treatment; however, it is limited in clinical administration due to its serious side effects. In cancer medicine, the use of nanoparticles (NPs) drug delivery system (DDS) can sustainedly release anticancer drug at the specific site and reduce the incidence of toxicity in normal tissues. In the present study, we aimed to evaluate the benefit of a novel chemotherapeutic DDS and its underlying mechanisms. Daunorubicin (DNR) was loaded into poly (lactic-co-glycolic acid) (PLGA)-poly-L-lysine (PLL)-polyethylene glycol (PEG)-transferrin (Tf) NPs to construct DNR-PLGA-PLL-PEG-Tf-NPs (DNR-loaded NPs) as a DDS. After incubating with PLGA-PLL-PEG-Tf-NPs, DNR, and DNR-loaded NPs, the leukemia K562 cells were collected and the intracellular concentration of DNR was detected by flow cytometry, respectively. Furthermore, the effect of drugs on the growth of tumors in K562 xenografts was observed and the relevant toxicity of therapeutic drugs on organs was investigated in vivo. Meanwhile, cell apoptosis in the excised xenografts was measured by transferase-mediated dUTP nick-end labeling assay, and the expression of apoptosis-related proteins, including Bcl-2, Bax, Caspase-9, Caspase-3, and cleaved-PARP, was determined by Western blotting analysis. Results showed that DNR-loaded NPs increased intracellular concentration of DNR in K562 cells in vitro and induced a remarkable improvement in anticancer activity in the xenografts in vivo. The expression of Bcl-2 protein was downregulated and that of Bax, Caspase-9, Caspase-3, and cleaved-PARP proteins were obviously upregulated in the DNR-loaded NPs group than that in other ones. Interestingly, pathological assessment showed no apparent damage to the main organs. In summary, the results obtained from this study showed that the novel NPs DDS could improve the efficacy of DNR in the treatment of leukemia and induce apoptosis via intrinsic pathway. Thus, it can be inferred that the new drug

  13. Recombination Parameters for Antimonide-Based Semiconductors using RF Photoreflection Techniques

    SciTech Connect

    R.J. Kumar; J.M. Borrego; P.S. Dutta; R.J. Gutmann; C.A. Wang; R.U. Martinelli; G. Nichols

    2002-10-10

    RF photoreflection measurements and PC-1D simulations have been used to evaluate bulk and surface recombination parameters in antimonide-based materials. PC-1D is used to simulate the photoconductivity response of antimonide-based substrates and doubly-capped epitaxial layers and also to determine how to extract the recombination parameters using experimental results. Excellent agreement has been obtained with a first-order model and test structure simulation when Shockley-Reed-Hall (SRH) recombination is the bulk recombination process. When radiative, Auger and surface recombination are included, the simulation results show good agreement with the model. RF photoreflection measurements and simulations using PC-1D are compatible with a radiative recombination coefficient (B) of approximately 5 x 10{sup -11} cm{sup 3}/s, Auger coefficient (C) {approx} 1.0 x 10{sup -28} cm{sup 6}/s and surface recombination velocity (SRV) {approx} 600 cm/s for 0.50-0.55 eV doubly-capped InGaAsSb material with GaSb capping layers using the experimentally determined active layer doping of 2 x 10{sup 17} cm{sup -3}. Photon recycling, neglected in the analysis and simulations presented, will affect the extracted recombination parameters to some extent.

  14. Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kudo, Atsushi; Yanagi, Hiroshi; Ueda, Kazushige; Hosono, Hideo; Kawazoe, Hiroshi; Yano, Yoshihiko

    1999-11-01

    All oxide-based, transparent polycrystalline p-n heterojunctions on a glass substrate were fabricated. The structure of the diode was n+-ZnO electrode/n-ZnO/p-SrCu2O2/In2-xSnxO3 electrode on the substrate. The contact between the n- and p-type semiconducting oxides was found to be rectifying. The ratio of forward current to the reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V and the estimated diode factor (n value) was 1.62. The diode structure was fabricated on a glass plate with the total thickness of 1.3 μm and possessed an optical transmission of 70%-80% in the visible region.

  15. SEMICONDUCTOR DEVICES: Analysis of a wavelength selectable cascaded DFB laser based on the transfer matrix method

    NASA Astrophysics Data System (ADS)

    Hongyun, Xie; Liang, Chen; Pei, Shen; Botao, Sun; Renqing, Wang; Ying, Xiao; Yunxia, You; Wanrong, Zhang

    2010-06-01

    A novel cascaded DFB laser, which consists of two serial gratings to provide selectable wavelengths, is presented and analyzed by the transfer matrix method. In this method, efficient facet reflectivity is derived from the transfer matrix built for each serial section and is then used to simulate the performance of the novel cascaded DFB laser through self-consistently solving the gain equation, the coupled wave equation and the current continuity equations. The simulations prove the feasibility of this kind of wavelength selectable laser and a corresponding designed device with two selectable wavelengths of 1.51 μm and 1.53 μm is realized by experiments on InP-based multiple quantum well structure.

  16. SEMICONDUCTOR DEVICES MEMS magnetic field sensor based on silicon bridge structure

    NASA Astrophysics Data System (ADS)

    Guangtao, Du; Xiangdong, Chen; Qibin, Lin; Hui, Li; Huihui, Guo

    2010-10-01

    A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested. The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge, and a ferromagnetic magnet adhered to the sensitivity diaphragm. When the sensor is subjected to an external magnetic field, the magnetic force bends the silicon sensitivity diaphragm, producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor. Good agreement is observed between the theory and measurement behavior of the magnetic field sensor. Experimental results demonstrate that the maximum sensitivity and minimum resolution are 48 m V/T and 160 μT, respectively, making this device suitable for strong magnetic field measurement. Research results indicate that the sensor repeatability and dynamic response time are about 0.66% and 150 ms, respectively.

  17. SEMICONDUCTOR DEVICES MEXTRAM model based SiGe HBT large-signal modeling

    NASA Astrophysics Data System (ADS)

    Bo, Han; Shoulin, Li; Jiali, Cheng; Qiuyan, Yin; Jianjun, Gao

    2010-10-01

    An improved large-signal equivalent-circuit model for SiGe HBTs based on the MEXTRAM model (level 504.5) is proposed. The proposed model takes into account the soft knee effect. The model keeps the main features of the MEXTRAM model even though some simplifications have been made in the equivalent circuit topology. This model is validated in DC and AC analyses for SiGe HBTs fabricated with 0.35-μm BiCMOS technology, 1 × 8 μm2 emitter area. Good agreement is achieved between the measured and modeled results for DC and S-parameters (from 50 MHz to 20 GHz), which shows that the proposed model is accurate and reliable. The model has been implemented in Verilog-A using the ADS circuit simulator.

  18. Trends and techniques for space base electronics. [mathematical models, ion implantation, and semiconductors

    NASA Technical Reports Server (NTRS)

    Gassaway, J. D.; Mahmood, Q.; Trotter, J. D.

    1978-01-01

    A system was developed for depositing aluminum and aluminum alloys by the D.C. sputtering technique. This system which was designed for a high level of cleanliness and ion monitoring the deposition parameters during film preparation is ready for studying the deposition and annealing parameters upon double level metal preparation. The finite element method was studied for use in the computer modeling of two dimensional MOS transistor structures. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions typical of those used at MSFC. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients. Data are given showing both two dimensional effects and the evolution of the junction depth, sheet resistance and integrated dose with redistribution time.

  19. Triazine-based graphitic carbon nitride: a two-dimensional semiconductor.

    PubMed

    Algara-Siller, Gerardo; Severin, Nikolai; Chong, Samantha Y; Björkman, Torbjörn; Palgrave, Robert G; Laybourn, Andrea; Antonietti, Markus; Khimyak, Yaroslav Z; Krasheninnikov, Arkady V; Rabe, Jürgen P; Kaiser, Ute; Cooper, Andrew I; Thomas, Arne; Bojdys, Michael J

    2014-07-14

    Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.

  20. Amplicon-based semiconductor sequencing of human exomes: performance evaluation and optimization strategies.

    PubMed

    Damiati, E; Borsani, G; Giacopuzzi, Edoardo

    2016-05-01

    The Ion Proton platform allows to perform whole exome sequencing (WES) at low cost, providing rapid turnaround time and great flexibility. Products for WES on Ion Proton system include the AmpliSeq Exome kit and the recently introduced HiQ sequencing chemistry. Here, we used gold standard variants from GIAB consortium to assess the performances in variants identification, characterize the erroneous calls and develop a filtering strategy to reduce false positives. The AmpliSeq Exome kit captures a large fraction of bases (>94 %) in human CDS, ClinVar genes and ACMG genes, but with 2,041 (7 %), 449 (13 %) and 11 (19 %) genes not fully represented, respectively. Overall, 515 protein coding genes contain hard-to-sequence regions, including 90 genes from ClinVar. Performance in variants detection was maximum at mean coverage >120×, while at 90× and 70× we measured a loss of variants of 3.2 and 4.5 %, respectively. WES using HiQ chemistry showed ~71/97.5 % sensitivity, ~37/2 % FDR and ~0.66/0.98 F1 score for indels and SNPs, respectively. The proposed low, medium or high-stringency filters reduced the amount of false positives by 10.2, 21.2 and 40.4 % for indels and 21.2, 41.9 and 68.2 % for SNP, respectively. Amplicon-based WES on Ion Proton platform using HiQ chemistry emerged as a competitive approach, with improved accuracy in variants identification. False-positive variants remain an issue for the Ion Torrent technology, but our filtering strategy can be applied to reduce erroneous variants.

  1. Intrinsically irreversible heat engine

    DOEpatents

    Wheatley, John C.; Swift, Gregory W.; Migliori, Albert

    1984-01-01

    A class of heat engines based on an intrinsically irreversible heat transfer process is disclosed. In a typical embodiment the engine comprises a compressible fluid that is cyclically compressed and expanded while at the same time being driven in reciprocal motion by a positive displacement drive means. A second thermodynamic medium is maintained in imperfect thermal contact with the fluid and bears a broken thermodynamic symmetry with respect to the fluid. the second thermodynamic medium is a structure adapted to have a low fluid flow impedance with respect to the compressible fluid, and which is further adapted to be in only moderate thermal contact with the fluid. In operation, thermal energy is pumped along the second medium due to a phase lag between the cyclical heating and cooling of the fluid and the resulting heat conduction between the fluid and the medium. In a preferred embodiment the engine comprises an acoustical drive and a housing containing a gas which is driven at a resonant frequency so as to be maintained in a standing wave. Operation of the engine at acoustic frequencies improves the power density and coefficient of performance. The second thermodynamic medium can be coupled to suitable heat exchangers to utilize the engine as a simple refrigeration device having no mechanical moving parts. Alternatively, the engine is reversible in function so as to be utilizable as a prime mover by coupling it to suitable sources and sinks of heat.

  2. Intrinsically irreversible heat engine

    DOEpatents

    Wheatley, J.C.; Swift, G.W.; Migliori, A.

    1984-12-25

    A class of heat engines based on an intrinsically irreversible heat transfer process is disclosed. In a typical embodiment the engine comprises a compressible fluid that is cyclically compressed and expanded while at the same time being driven in reciprocal motion by a positive displacement drive means. A second thermodynamic medium is maintained in imperfect thermal contact with the fluid and bears a broken thermodynamic symmetry with respect to the fluid. The second thermodynamic medium is a structure adapted to have a low fluid flow impedance with respect to the compressible fluid, and which is further adapted to be in only moderate thermal contact with the fluid. In operation, thermal energy is pumped along the second medium due to a phase lag between the cyclical heating and cooling of the fluid and the resulting heat conduction between the fluid and the medium. In a preferred embodiment the engine comprises an acoustical drive and a housing containing a gas which is driven at a resonant frequency so as to be maintained in a standing wave. Operation of the engine at acoustic frequencies improves the power density and coefficient of performance. The second thermodynamic medium can be coupled to suitable heat exchangers to utilize the engine as a simple refrigeration device having no mechanical moving parts. Alternatively, the engine is reversible in function so as to be utilizable as a prime mover by coupling it to suitable sources and sinks of heat. 11 figs.

  3. Intrinsically irreversible heat engine

    DOEpatents

    Wheatley, J.C.; Swift, G.W.; Migliori, A.

    1984-01-01

    A class of heat engines based on an intrinsically irreversible heat transfer process is disclosed. In a typical embodiment the engine comprises a compressible fluid that is cyclically compressed and expanded while at the same time being driven in reciprocal motion by a positive displacement drive means. A second thermodynamic medium is maintained in imperfect thermal contact with the fluid and bears a broken thermodynamic symmetry with respect to the fluid. The second thermodynamic medium is a structure adapted to have a low fluid flow impedance with respect to the compressible fluid, and which is further adapted to be in only moderate thermal contact with the fluid. In operation, thermal energy is pumped along the second medium due to a phase lag between the cyclical heating and cooling of the fluid and the resulting heat conduction between the fluid and the medium. In a preferred embodiment the engine comprises an acoustical drive and a housing containing a gas which is driven at a resonant frequency so as to be maintained in a standing wave. Operation of the engine at acoustic frequencies improves the power density and coefficient of performance. The second thermodynamic medium can be coupled to suitable heat exchangers to utilize the engine as a simple refrigeration device having no mechanical moving parts. Alternatively, the engine is reversible in function so as to be utilizable as a prime mover by coupling it to suitable sources and sinks of heat.

  4. What is intrinsic and what is extrinsic in the spin Hall effect?

    NASA Astrophysics Data System (ADS)

    Hankiewicz, Ewelina; Vignale, Giovanni; Flatté, Michael

    2006-03-01

    Two different forms of the spin Hall effect, intrinsic and extrinsic, have been recently proposed and observed in experiments. The intrinsic effect is caused by spin-orbit coupling in the band structure of the semiconductor and survives in the limit of zero disorder, whereas the extrinsic effect is caused by spin-orbit coupling between Bloch electrons and impurities. We treat both effects on equal footing within the framework of the exact Kubo linear response formalism. We show that the ``side-jump" term, which is usually considered part of the extrinsic spin Hall effect, is really intrinsic, because it is independent of disorder. Furthermore, it is the only non-zero intrinsic contribution to the spin-Hall effect for the linear Rashba (or Dresselhaus) spin-orbit coupling model. On the other hand, the skew scattering term is the only extrinsic contribution to the spin-Hall effect within this model. The proof based on gauge invariance holds at all orders in disorder and electron-electron interactions and to first order in spin-orbit coupling, but does not apply to more complex spin-orbit coupled bands (e.g the Luttinger model). We also study many-body effects and predict that the spin Coulomb drag will reduce the spin Hall conductivity.

  5. Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots.

    PubMed

    Shin, Seung Won; Lee, Kwang-Ho; Park, Jin-Seong; Kang, Seong Jun

    2015-09-01

    Highly transparent phototransistors that can detect visible light have been fabricated by combining indium-gallium-zinc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35×10(4) A/W and an external quantum efficiency of 2.59×10(4) under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photodetectors that can detect visible light. PMID:26293387

  6. SEMICONDUCTOR DEVICES: A new SOI high voltage device based on E-SIMOX substrate

    NASA Astrophysics Data System (ADS)

    Lijuan, Wu; Shengdong, Hu; Bo, Zhang; Zhaoji, Li

    2010-04-01

    A new NI (n+ charge islands) high voltage device structure based on E-SIMOX (epitaxy-the separation by implantation of oxygen) substrate is proposed. It is characterized by equidistant high concentration n+-regions on the top interface of the dielectric buried layer. Inversion holes caused by the vertical electric field (EV) are located in the spacing of two neighboring n+-regions on the interface by the force from lateral electric field (EL) and the compositive operation of Coulomb's forces with the ionized donors in the undepleted n+-regions. This effectively enhances the electric field of dielectric buried layer (EI) and increases breakdown voltage (VB). An analytical model of the vertical interface electric field for the NI SOI is presented, and the analytical results are in good agreement with the 2D simulative results. EI = 568 V/μm and VB = 230 V of NI SOI are obtained by 2D simulation on a 0.375-μm-thick dielectric layer and 2-μm-thick top silicon layer. The device can be manufactured by using the standard CMOS process with addition of a mask for implanting arsenic to form NI. 2-μm silicon layer can be achieved by using epitaxy SIMOX technology (E-SIMOX).

  7. Gamma detectors for spectroscopy and imaging based on scintillators coupled to semiconductor detectors

    NASA Astrophysics Data System (ADS)

    Fiorini, Carlo

    2000-11-01

    Silicon photodetectors have been successfully employed for scintillation detection in gamma-ray spectroscopy and imaging applications. When compared to photomultiplier tubes (PMTs), silicon photodetectors are characterized by higher quantum efficiency to the scintillation light. Moreover, these devices are more compact, immune to magnetic fields and can be easily integrated in monolithic arrays of units whose size could range from few mm2 up to some cm2. New gamma-ray detection systems based on scintillators coupled to silicon photodetectors have been recently developed for astrophysics experiments as well as for imaging systems in nuclear medicine. Among silicon detectors, conventional silicon PN photodiodes (PDs), avalanche photodiodes (APDs) and silicon drift detectors (SDDs) have been used with scintillators both as single units and as monolithic arrays. In the paper, the main features of silicon photodetectors used with scintillators for gamma detection are shortly described and the more recent achievements in their development are overviewed. Finally, a comparison of the achievable performances with PDs, APDs, and SDDs is reported.

  8. Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots.

    PubMed

    Shin, Seung Won; Lee, Kwang-Ho; Park, Jin-Seong; Kang, Seong Jun

    2015-09-01

    Highly transparent phototransistors that can detect visible light have been fabricated by combining indium-gallium-zinc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35×10(4) A/W and an external quantum efficiency of 2.59×10(4) under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photodetectors that can detect visible light.

  9. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  10. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  11. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  12. Comprehensive Molecular Profiling of Archival Bone Marrow Trephines Using a Commercially Available Leukemia Panel and Semiconductor-Based Targeted Resequencing.

    PubMed

    Bartels, Stephan; Schipper, Elisa; Kreipe, Hans Heinrich; Lehmann, Ulrich

    2015-01-01

    replacing Sanger sequencing by this semiconductor-based targeted resequencing approach.

  13. Comprehensive Molecular Profiling of Archival Bone Marrow Trephines Using a Commercially Available Leukemia Panel and Semiconductor-Based Targeted Resequencing

    PubMed Central

    Bartels, Stephan; Schipper, Elisa; Kreipe, Hans Heinrich; Lehmann, Ulrich

    2015-01-01

    replacing Sanger sequencing by this semiconductor-based targeted resequencing approach. PMID:26222071

  14. Speckle noise reduction of a dual-frequency laser Doppler velocimeter based on an optically injected semiconductor laser

    NASA Astrophysics Data System (ADS)

    Cheng, Chih-Hao; Lee, Jia-Wei; Lin, Tze-Wei; Lin, Fan-Yi

    2012-02-01

    We develop and investigate a dual-frequency Laser Doppler Velocimeter (DF-LDV) based on an optically injected semiconductor laser. By operating the laser in a period-one oscillation (P1) state, the laser can emit light with two coherent frequency components separated by about 11.25 GHz. Through optical heterodyning, the velocity of the target can be determined from the Doppler shift of the beat signal of the dual-frequency light. While the DF-LDV has the same advantages of good directionality and high intensity as in the conventional singlefrequency LDV (SF-LDV), having an effective wavelength in the range of microwave in the beat signal greatly reduces the speckle noise caused by the random phase modulation from the rough surface of the moving target. To demonstrate the speckle noise reduction, the Doppler shifted signals from a moving target covered by the plain paper are measured both from the SF-LDV and the DF-LDV. The target is rotated to provide a transverse velocity, where the speckle noise increases as the transverse velocity increases. The bandwidth of the Doppler signal obtained from the SF-LDV is increased from 4.7 kHz to 9.4 kHz as the transverse velocity increases from 0 m/s to 5 m/s. In contrast, the bandwidth obtained from the DF-LDV maintains at 0.09 Hz with or without the rotation limited by the linewidth of the P1 state used. By phase-locking the laser with a RF current modulation, the linewidth of the P1 state can be much reduced to further improve the velocity resolution and extend the detection range.

  15. Oxide-based method of making compound semiconductor films and making related electronic devices

    DOEpatents

    Kapur, Vijay K.; Basol, Bulent M.; Leidholm, Craig R.; Roe, Robert A.

    2000-01-01

    A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The oxide-containing particles may include a dopant, as may the compound film. Compound films including a Group IIB-IVA-VA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

  16. Quasar redshifts: the intrinsic component

    NASA Astrophysics Data System (ADS)

    Hansen, Peter M.

    2016-09-01

    The large observed redshift of quasars has suggested large cosmological distances and a corresponding enormous energy output to explain the brightness or luminosity as seen at earth. Alternative or complementary sources of redshift have not been identified by the astronomical community. This study examines one possible source of additional redshift: an intrinsic component based on the plasma characteristics of high temperature and high electron density which are believed to be present.

  17. Induction of intrinsic and extrinsic apoptosis through oxidative stress in drug-resistant cancer by a newly synthesized Schiff base copper chelate.

    PubMed

    Banerjee, Kaushik; Basu, Soumya; Das, Satyajit; Sinha, Abhinaba; Biswas, Manas Kumar; Choudhuri, Soumitra Kumar

    2016-01-01

    Multidrug resistance (MDR) in cancer represents a variety of strategies employed by tumor cells to evade the beneficial cytotoxic effects of structurally different anticancer drugs and thus confers impediments to the successful treatment of cancers. Efflux of drugs by MDR protein-1, functional P-glycoprotein and elevated level of reduced glutathione confer resistance to cell death or apoptosis and thus provide a possible therapeutic target for overcoming MDR in cancer. Previously, we reported that a Schiff base ligand, potassium-N-(2-hydroxy 3-methoxy-benzaldehyde)-alaninate (PHMBA) overcomes MDR in both in vivo and in vitro by targeting intrinsic apoptotic/necrotic pathway through induction of reactive oxygen species (ROS). The present study describes the synthesis and spectroscopic characterization of a copper chelate of Schiff base, viz., copper (II)-N-(2-hydroxy-3-methoxy-benzaldehyde)-alaninate (CuPHMBA) and the underlying mechanism of cell death induced by CuPHMBA in vitro. CuPHMBA kills both the drug-resistant and sensitive cell types irrespective of their drug resistance phenotype. The cell death induced by CuPHMBA follows apoptotic pathway and moreover, the cell death is associated with intrinsic mitochondrial and extrinsic receptor-mediated pathways. Oxidative stress plays a pivotal role in the process as proved by the fact that antioxidant enzyme; polyethylene glycol conjugated-catalase completely blocked CuPHMBA-induced ROS generation and abrogated cell death. To summarize, the present work provides a compelling rationale for the future clinical use of CuPHMBA, a redox active copper chelate in the treatment of cancer patients, irrespective of their drug-resistance status.

  18. Induction of intrinsic and extrinsic apoptosis through oxidative stress in drug-resistant cancer by a newly synthesized Schiff base copper chelate.

    PubMed

    Banerjee, Kaushik; Basu, Soumya; Das, Satyajit; Sinha, Abhinaba; Biswas, Manas Kumar; Choudhuri, Soumitra Kumar

    2016-01-01

    Multidrug resistance (MDR) in cancer represents a variety of strategies employed by tumor cells to evade the beneficial cytotoxic effects of structurally different anticancer drugs and thus confers impediments to the successful treatment of cancers. Efflux of drugs by MDR protein-1, functional P-glycoprotein and elevated level of reduced glutathione confer resistance to cell death or apoptosis and thus provide a possible therapeutic target for overcoming MDR in cancer. Previously, we reported that a Schiff base ligand, potassium-N-(2-hydroxy 3-methoxy-benzaldehyde)-alaninate (PHMBA) overcomes MDR in both in vivo and in vitro by targeting intrinsic apoptotic/necrotic pathway through induction of reactive oxygen species (ROS). The present study describes the synthesis and spectroscopic characterization of a copper chelate of Schiff base, viz., copper (II)-N-(2-hydroxy-3-methoxy-benzaldehyde)-alaninate (CuPHMBA) and the underlying mechanism of cell death induced by CuPHMBA in vitro. CuPHMBA kills both the drug-resistant and sensitive cell types irrespective of their drug resistance phenotype. The cell death induced by CuPHMBA follows apoptotic pathway and moreover, the cell death is associated with intrinsic mitochondrial and extrinsic receptor-mediated pathways. Oxidative stress plays a pivotal role in the process as proved by the fact that antioxidant enzyme; polyethylene glycol conjugated-catalase completely blocked CuPHMBA-induced ROS generation and abrogated cell death. To summarize, the present work provides a compelling rationale for the future clinical use of CuPHMBA, a redox active copper chelate in the treatment of cancer patients, irrespective of their drug-resistance status. PMID:26733073

  19. Moving liquids with light: Photoelectrowetting on semiconductors

    NASA Astrophysics Data System (ADS)

    Arscott, Steve

    2011-12-01

    By linking semiconductor physics and wetting phenomena a brand new effect termed ``photoelectrowetting-on-semiconductors'' is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a modification of the wetting contact angle of the droplet upon illumination using above band gap light. The effect is demonstrated using commercial silicon wafers, both n- and p-type having a doping range spanning four orders of magnitude (6×1014-8×1018 cm-3), coated with a commercial amorphous fluoropolymer insulating film (Teflon®). Impedance measurements confirm that the observations are semiconductor space-charge related effects. The impact of the work could lead to new silicon-based technologies in areas such as Laboratory-on-a-Chip, Microfluidics and Optofluidics.

  20. Characteristic Behavior of ESR Linewidth in Cr-doped PbTe-based Diluted Magnetic Semiconductors in the Vicinity of Ferromagnetic Ordering Transition

    NASA Astrophysics Data System (ADS)

    Zvereva, E.; Savelieva, O.; Ibragimov, S.; Slyn'ko, E.; Slyn'ko, V.

    2011-12-01

    Here we report on magnetization (T = 1.8-400 K, B≤7 T) and X-band ESR study (f = 9.1-9.6 GHz, T = 90-450 K) for Pb1-yCryTe ferromagnetic semiconductor and two new PbTe-based semiconductors Pb1-x-ySnxCryTe and Pb1-x-yMgxCryTe in the vicinity of the transition to ferromagnetic state. It was found that these semiconductors demonstrate ferromagnetism at temperatures higher than room temperature. The Curie temperature TC varies in a wide range (150-390 K) depending on the matrix composition and chromium content. In the paramagnetic phase the ESR spectra show a single asymmetrical line of Dysonian shape due to skin effect, typical of conducting materials. Regardless of matrix composition the effective g-factor tends to the saturation value g = 2.08±0.02 and the linewidth is ΔB≈0.08 T at the highest temperature limit. Upon approaching TC from above g-factor slowly increases, while the linewidth falls approximately two times and passes through the minimum at T*≈1.2TC. In the vicinity of TC the ESR parameters show distinct anomalies, which were associated with presence of strong magnetic fluctuation at an onset of FM ordering.

  1. Density functional theory based tight binding study on theoretical prediction of low-density nanoporous phases ZnO semiconductor materials

    NASA Astrophysics Data System (ADS)

    Tuoc, Vu Ngoc; Doan Huan, Tran; Viet Minh, Nguyen; Thi Thao, Nguyen

    2016-06-01

    Polymorphs or phases - different inorganic solids structures of the same composition usually have widely differing properties and applications, thereby synthesizing or predicting new classes of polymorphs for a certain compound is of great significance and has been gaining considerable interest. Herein, we perform a density functional theory based tight binding (DFTB) study on theoretical prediction of several new phases series of II-VI semiconductor material ZnO nanoporous phases from their bottom-up building blocks. Among these, three phases are reported for the first time, which could greatly expand the family of II- VI compound nanoporous phases. We also show that all these generally can be categorized similarly to the aluminosilicate zeolites inorganic open-framework materials. The hollow cage structure of the corresponding building block ZnkOk (k= 9, 12, 16) is well preserved in all of them, which leads to their low-density nanoporous and high flexibility. Additionally the electronic wide-energy gap of the individual ZnkOk is also retained. Our study reveals that they are all semiconductor materials with a large band gap. Further, this study is likely to be the common for II-VI semiconductor compounds and will be helpful for extending their range of properties and applications.

  2. Taming excitons in II-VI semiconductor nanowires and nanobelts

    NASA Astrophysics Data System (ADS)

    Xu, Xinlong; Zhang, Qing; Zhang, Jun; Zhou, Yixuan; Xiong, Qihua

    2014-10-01

    Excitons are one of the most important fundamental quasi-particles, and are involved in a variety of processes forming the basis of a wide range of opto-electronic and photonic devices based on II-VI semiconductor nanowires and nanobelts, such as light-emitting diodes, photovoltaic cells, photodetectors and nanolasers. A clear understanding of their properties and unveiling the potential engineering for excitons is of particular importance for the design and optimization of nanoscale opto-electronic and photonic devices. Herein, we present a comprehensive review on discussing the fundamental behaviours of the excitons in one-dimensional (1D) II-VI semiconductor nanomaterials (nanowires and nanobelts). We will start with a focus on the unique properties (origin, generation, etc) and dynamics of excitons and exciton complexes in the II-VI semiconductor nanowires and nanobelts. Then we move to the recent progress on the excitonic response in 1D nanomaterials and focus on the tailoring and engineering of excitonic properties through rational controlling of the physical parameters and conditions, intrinsically and extrinsically. These include (1) exciton-exciton interaction, which is important for 1D nanomaterial nanolasing; (2) exciton-phonon interaction, which has interesting applications for laser cooling; and (3) exciton-plasmon interaction, which is the cornerstone towards the realization of plasmonic lasers. The potential of electric field, morphology and size control for excitonic properties is also discussed. Unveiling and controlling excitonic properties in II-VI semiconductor nanowires and nanobelts would promote the development of 1D nanoscience and nanotechnology.

  3. A synaptic device built in one diode-one resistor (1D-1R) architecture with intrinsic SiOx-based resistive switching memory

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Sze, Simon M.; Lee, Jack C.

    2016-04-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes to further minimize total synaptic power consumption due to sneak-path currents and demonstrate the capability for spike-induced synaptic behaviors, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation, long-term depression, and spike-timing dependent plasticity are demonstrated systemically with comprehensive investigation of spike waveform analyses and represent a potential application for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from the (SiH)2 defect to generate the hydrogenbridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with largescale complementary metal-oxide semiconductor manufacturing technology.

  4. rf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Dumas-Bouchiat, F.; Champeaux, C.; Catherinot, A.; Crunteanu, A.; Blondy, P.

    2007-11-01

    Microwave switching devices based on the semiconductor-metal transition of VO2 thin films were developped on two types of substrates (C-plane sapphire and SiO2/Si), and in both shunt and series configurations. Under thermal activation, the switches achieved up to 30-40dB average isolation of the radio-frequency (rf) signal on 500MHz -35GHz frequency band with weak insertion losses. These VO2-based switches can be electrically activated with commutation times less than 100ns, which make them promising candidates for realizing efficient and simple rf switches.

  5. Intrinsic Josephson Junctions in the iron-based multi-band superconductor (V2Sr4O6)Fe2As2

    NASA Astrophysics Data System (ADS)

    Moll, Philip; Zhu, Xiyu; Cheng, Peng; Wen, Hai-Hu; Bertram, Batlogg

    2014-03-01

    We have observed clear experimental evidence for intrinsic Josephson junction (iJJ) behavior in the iron-based superconductor (V2Sr4O6)Fe2As2 (Tc ~ 20 K). The iJJs are identified by periodic oscillations of the flux flow voltage for out-of-plane (c-axis) currents upon increasing a well aligned in-plane magnetic field. Their periodicity is well explained by commensurability effects between the Josephson vortex lattice and the crystal structure, which is a hallmark signature of Josephson vortices confined into iJJ stacks. Essential for reliable c-axis transport measurements on the available microcrystals are Focused Ion Beam microstructuring and contacting techniques. The insulating temperature behavior of ρc indicates S-I-S type junctions. This finding adds (V2Sr4O6)Fe2As2 as the first iron-based, multi-band superconductor to the copper-based iJJ materials of interest for Josephson junction applications, and in particular novel devices based on multi-band Josephson coupling may be realized.

  6. Engineering optical properties of semiconductor metafilm superabsorbers

    NASA Astrophysics Data System (ADS)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2016-04-01

    Light absorption in ultrathin layer of semiconductor has been considerable interests for many years due to its potential applications in various optical devices. In particular, there have been great efforts to engineer the optical properties of the film for the control of absorption spectrums. Whereas the isotropic thin films have intrinsic optical properties that are fixed by materials' properties, metafilm that are composed by deep subwavelength nano-building blocks provides significant flexibilities in controlling the optical properties of the designed effective layers. Here, we present the ultrathin semiconductor metafilm absorbers by arranging germanium (Ge) nanobeams in deep subwavelength scale. Resonant properties of high index semiconductor nanobeams play a key role in designing effective optical properties of the film. We demonstrate this in theory and experimental measurements to build a designing rule of efficient, controllable metafilm absorbers. The proposed strategy of engineering optical properties could open up wide range of applications from ultrathin photodetection and solar energy harvesting to the diverse flexible optoelectronics.

  7. A sensitive fluorescent assay for thiamine based on metal-organic frameworks with intrinsic peroxidase-like activity.

    PubMed

    Tan, Hongliang; Li, Qian; Zhou, Zhengchen; Ma, Chanjiao; Song, Yonghai; Xu, Fugang; Wang, Li

    2015-01-26

    Metal-organic frameworks (MOFs) with tunable structures and properties have recently been emerged as very interesting functional materials. However, the catalytic properties of MOFs as enzymatic mimics remain to be further investigated. In this work, we for the first time demonstrated the peroxidase-like activity of copper-based MOFs (HKUST-1) by employing thiamine (TH) as a peroxidase substrate. In the presence of H2O2, HKUST-1 can catalyze efficiently the conversion of non-fluorescent TH to strong fluorescent thiochrome. The catalytic activity of HKUST-1 is highly dependent on the temperature, pH and H2O2 concentrations. As a peroxidase mimic, HKUST-1 not only has the features of low cost, high stability and easy preparation, but also follows Michaelis-Menten behaviors and shows stronger affinity to TH than horseradish peroxidase (HRP). Based on the peroxidase-like activity of HKUST-1, a simple and sensitive fluorescent method for TH detection has been developed. As low as 1 μM TH can be detected with a linear range from 4 to 700 μM. The detection limit for TH is about 50 fold lower than that of HRP-based fluorescent assay. The proposed method was successfully applied to detect TH in tablets and urine samples and showed a satisfactory result. We believed that the present work could improve the understanding of catalytic behaviors of MOFs as enzymatic mimics and find out a wider application in bioanalysis.

  8. High-power semiconductor separate-confinement double heterostructure lasers

    SciTech Connect

    Tarasov, I S

    2010-10-15

    The review is devoted to high-power semiconductor lasers. Historical reference is presented, physical and technological foundations are considered, and the concept of high-power semiconductor lasers is formulated. Fundamental and technological reasons limiting the optical power of a semiconductor laser are determined. The results of investigations of cw and pulsed high-power semiconductor lasers are presented. Main attention is paid to inspection of the results of experimental studies of single high-power semiconductor lasers. The review is mainly based on the data obtained in the laboratory of semiconductor luminescence and injection emitters at the A.F. Ioffe Physicotechnical Institute. (review)

  9. Semiconductor superlattice photodetectors

    NASA Technical Reports Server (NTRS)

    Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

    1984-01-01

    A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

  10. Analysis of Intrinsic Peptide Detectability via Integrated Label-Free and SRM-Based Absolute Quantitative Proteomics.

    PubMed

    Jarnuczak, Andrew F; Lee, Dave C H; Lawless, Craig; Holman, Stephen W; Eyers, Claire E; Hubbard, Simon J

    2016-09-01

    Quantitative mass spectrometry-based proteomics of complex biological samples remains challenging in part due to the variability and charge competition arising during electrospray ionization (ESI) of peptides and the subsequent transfer and detection of ions. These issues preclude direct quantification from signal intensity alone in the absence of a standard. A deeper understanding of the governing principles of peptide ionization and exploitation of the inherent ionization and detection parameters of individual peptides is thus of great value. Here, using the yeast proteome as a model system, we establish the concept of peptide F-factor as a measure of detectability, closely related to ionization efficiency. F-factor is calculated by normalizing peptide precursor ion intensity by absolute abundance of the parent protein. We investigated F-factor characteristics in different shotgun proteomics experiments, including across multiple ESI-based LC-MS platforms. We show that F-factors mirror previously observed physicochemical predictors as peptide detectability but demonstrate a nonlinear relationship between hydrophobicity and peptide detectability. Similarly, we use F-factors to show how peptide ion coelution adversely affects detectability and ionization. We suggest that F-factors have great utility for understanding peptide detectability and gas-phase ion chemistry in complex peptide mixtures, selection of surrogate peptides in targeted MS studies, and for calibration of peptide ion signal in label-free workflows. Data are available via ProteomeXchange with identifier PXD003472. PMID:27454336

  11. Exploiting the intrinsic microbial degradative potential for field-based in situ dechlorination of trichloroethene contaminated groundwater.

    PubMed

    Adetutu, Eric M; Gundry, Taylor D; Patil, Sayali S; Golneshin, Aida; Adigun, Joy; Bhaskarla, Vijay; Aleer, Samuel; Shahsavari, Esmaeil; Ross, Elizabeth; Ball, Andrew S

    2015-12-30

    Bioremediation of trichloroethene (TCE) polluted groundwater is challenging, with limited next generation sequencing (NGS) derived information available on microbial community dynamics associated with dechlorination. Understanding these dynamics is important for designing and improving TCE bioremediation. In this study, biostimulation (BS), biostimulation-bioaugmentation (BS-BA) and monitored natural attenuation (MNA) approaches were applied to contaminated groundwater wells resulted in ≥ 95% dechlorination within 7 months. Vinyl chloride's final concentrations in stimulated wells were between 1.84 and 1.87 μg L(-1), below the US EPA limit of 2.0 μg L(-1), compared to MNA (4.3 μg L(-1)). Assessment of the groundwater microbial community with qPCR showed up to ∼ 50-fold increase in the classical dechlorinators' (Geobacter and Dehalococcoides sp.) population post-treatment. Metagenomic assays revealed shifts from Gammaproteobacteria (pre-treatment) to Epsilonproteobacteria and Deltaproteobacteria (post-treatment) only in stimulated wells. Although stimulated wells were functionally distinct from MNA wells post-treatment, substantial dechlorination in all the wells implied some measure of redundancy. This study, one of the few NGS-based field studies on TCE bioremediation, provides greater insights into dechlorinating microbial community dynamics which should be useful for future field-based studies.

  12. An all-fiber partial discharge monitoring system based on both intrinsic fiber optic interferometry sensor and fluorescent fiber

    NASA Astrophysics Data System (ADS)

    Yin, Zelin; Zhang, Ruirui; Tong, Jie; Chen, Xi

    2013-12-01

    Partial discharges (PDs) are an electrical phenomenon that occurs within a transformer whenever the voltage stress is sufficient to produce ionization in voids or inclusions within a solid dielectric, at conductor/dielectric interfaces, or in bubbles within liquid dielectrics such as oil; high-frequency transient current discharges will then appear repeatedly and will progressively deteriorate the insulation, ultimately leading to breakdown. Fiber sensor has great potential on the partial discharge detection in high-voltage equipment for its immunity to electromagnetic interference and it can take direct measurement in the high voltage equipment. The energy released in PDs produces a number of effects, resulting in flash, chemical and structural changes and electromagnetic emissions and so on. Acoustic PD detection is based on the mechanical pressure wave emitted from the discharge and fluorescent fiber PD detection is based on the emitted light produced by ionization, excitation and recombination processes during the discharge. Both of the two methods have the shortage of weak anti-interference capacity in the physical environment, like thunder or other sound source. In order to avoid the false report, an all-fiber combined PD detection system of the two methods is developed in this paper. In the system the fluorescent fiber PD sensor is considered as a reference signal, three F-P based PD detection sensors are used to both monitor the PD intensity and calculate the exact position of the discharge source. Considering the wave band of the F-P cavity and the fluorescent probe are quite different, the reflection spectrum of the F-P cavity is in the infrared region, however the fluorescent probe is about 600nm to 700nm, thus the F-P sensor and fluorescent fiber probe can be connected in one fiber and the reflection light can be detected by two different detectors without mutual interference. The all-fiber partial discharge monitoring system not only can detect the PDs

  13. Photoluminescence-based measurement technique of surface recombination velocity for high efficiency silicon and compound semiconductor solar cells

    SciTech Connect

    Saitoh, T.; Nakagawa, T.; Yoh, K.; Hasegawa, H.

    1994-12-31

    This paper shows that the recently proposed photoluminescence surface state spectroscopy (PLS{sup 3}) technique allows an in-situ, contactless and non-destructive determination of the value of the effective surface recombination velocity (S) under sunlight illumination and the surface/interface state density (N{sub ss}) distributions. This technique is successfully applied to measurement of the values of S at variously passivated Si surfaces. A best value of 3,000 cm/s is obtained under 1 sun condition for thermal oxidation. S is greatly reduced under concentrated sunlight. N{sub ss} distributions at compound semiconductor surfaces and heterointerfaces are also characterized to optimize the fabrication process of compound semiconductor solar cells. Formation of Si interface control layer (ICL) between InGaAs and SiO{sub 2} greatly reduces the interface states. Growth interruption at AlGaAs/GaAs hetero-interface produces high density of interface states. InAlAs/InGaAs heterointerfaces are also investigated. These results indicate that the new PLS{sup 3} technique is useful for the characterization and optimization of the fabrication processes of the silicon and compound semiconductor solar cells.

  14. Predicting Intrinsic Motivation

    ERIC Educational Resources Information Center

    Martens, Rob; Kirschner, Paul A.

    2004-01-01

    Intrinsic motivation can be predicted from participants' perceptions of the social environment and the task environment (Ryan & Deci, 2000)in terms of control, relatedness and competence. To determine the degree of independence of these factors 251 students in higher vocational education (physiotherapy and hotel management) indicated the extent to…

  15. Algebraic description of intrinsic modes in nuclei

    SciTech Connect

    Leviatan, A.

    1989-01-01

    We present a procedure for extracting normal modes in algebraic number-conserving systems of interacting bosons relevant for collective states in even-even nuclei. The Hamiltonian is resolved into intrinsic (bandhead related) and collective (in-band related) parts. Shape parameters are introduced through non-spherical boson bases. Intrinsic modes decoupled from the spurious modes are obtained from the intinsic part of the Hamiltonian in the limit of large number of bosons. Intrinsic states are constructed and serve to evaluate electromagnetic transition rates. The method is illustrated for systems with one type of boson as well as with proton-neutron bosons. 28 refs., 1 fig.

  16. Can Tauc plot extrapolation be used for direct-band-gap semiconductor nanocrystals?

    SciTech Connect

    Feng, Y. Lin, S.; Huang, S.; Shrestha, S.; Conibeer, G.

    2015-03-28

    Despite that Tauc plot extrapolation has been widely adopted for extracting bandgap energies of semiconductors, there is a lack of theoretical support for applying it to nanocrystals. In this paper, direct-allowed optical transitions in semiconductor nanocrystals have been formulated based on a purely theoretical approach. This result reveals a size-dependant transition of the power factor used in Tauc plot, increasing from one half used in the 3D bulk case to one in the 0D case. This size-dependant intermediate value of power factor allows a better extrapolation of measured absorption data. Being a material characterization technique, the generalized Tauc extrapolation gives a more reasonable and accurate acquisition of the intrinsic bandgap, while the unjustified purpose of extrapolating any elevated bandgap caused by quantum confinement is shown to be incorrect.

  17. Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric

    PubMed Central

    Liang, Jiajie; Li, Lu; Chen, Dustin; Hajagos, Tibor; Ren, Zhi; Chou, Shu-Yu; Hu, Wei; Pei, Qibing

    2015-01-01

    Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of ∼30 cm2 V−1 s−1, on/off ratio of 103–104, switching current >100 μA, transconductance >50 μS and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays. PMID:26173436

  18. Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric

    NASA Astrophysics Data System (ADS)

    Liang, Jiajie; Li, Lu; Chen, Dustin; Hajagos, Tibor; Ren, Zhi; Chou, Shu-Yu; Hu, Wei; Pei, Qibing

    2015-07-01

    Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of ~30 cm2 V-1 s-1, on/off ratio of 103-104, switching current >100 μA, transconductance >50 μS and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays.

  19. Intrinsic selection biases of ground-based gravitational wave searches for high-mass black hole-black hole mergers

    SciTech Connect

    O'Shaughnessy, R.; Vaishnav, B.; Healy, J.; Shoemaker, D.

    2010-11-15

    The next generation of ground-based gravitational wave detectors may detect a few mergers of comparable-mass M{approx_equal}100-1000M{sub {center_dot}}[''intermediate-mass'' (IMBH)] spinning black holes. Black hole spin is known to have a significant impact on the orbit, merger signal, and post-merger ringdown of any binary with non-negligible spin. In particular, the detection volume for spinning binaries depends significantly on the component black hole spins. We provide a fit to the single-detector and isotropic-network detection volume versus (total) mass and arbitrary spin for equal-mass binaries. Our analysis assumes matched filtering to all significant available waveform power (up to l=6 available for fitting, but only l{<=}4 significant) estimated by an array of 64 numerical simulations with component spins as large as S{sub 1,2}/M{sup 2{<=}}0.8. We provide a spin-dependent estimate of our uncertainty, up to S{sub 1,2}/M{sup 2{<=}}1. For the initial (advanced) LIGO detector, our fits are reliable for M(set-membership sign)[100,500]M{sub {center_dot}} (M(set-membership sign)[100,1600]M{sub {center_dot}}). In the online version of this article, we also provide fits assuming incomplete information, such as the neglect of higher-order harmonics. We briefly discuss how a strong selection bias towards aligned spins influences the interpretation of future gravitational wave detections of IMBH-IMBH mergers.

  20. Theory of extrinsic and intrinsic heterojunctions in thermal equilibrium

    NASA Technical Reports Server (NTRS)

    Von Ross, O.

    1980-01-01

    A careful analysis of an abrupt heterojunction consisting of two distinct semiconductors either intrinsic or extrinsic is presented. The calculations apply to a one-dimensional, nondegenerate structure. Taking into account all appropriate boundary conditions, it is shown that the intrinsic Fermi level shows a discontinuity at the interface between the two materials which leads to a discontinuity of the valence band edge equal to the difference in the band gap energies of the two materials. The conduction band edge stays continuous however. This result is independent of possible charged interface states and in sharp contrast to the Anderson model. The reasons for this discrepancy are discussed.

  1. The acidity and proton affinity of the damaged base 1,N6-ethenoadenine in the gas phase versus in solution: intrinsic reactivity and biological implications.

    PubMed

    Liu, Min; Xu, Meng; Lee, Jeehiun K

    2008-08-01

    1,N(6)-ethenoadenine (epsilonA) is a highly mutagenic lesion that is excised from human DNA by the enzyme alkyladenine DNA glycosylase (AAG). In an effort to understand the intrinsic properties of 1,N(6)-ethenoadenine, we examined its gas phase acidity and proton affinity using quantum mechanical calculations and mass spectrometric experimental methods. We measure two acidities for epsilonA: a more acidic site (DeltaH(acid) = 332 kcal mol(-1); DeltaG(acid) = 325 kcal mol(-1)) and a less acidic site (DeltaH(acid) = 367 kcal mol(-1); DeltaG(acid) = 360 kcal mol(-1)). We also find that the proton affinity of the most basic site of 1,N(6)-ethenoadenine is 232-233 kcal mol(-1) (GB = 224 kcal mol(-1)). These measurements, when compared to calculations, establish that, under our experimental conditions, we have only the canonical tautomer of 1,N(6)-ethenoadenine present. We also compare the gas phase acidic properties of epsilonA with that of the normal bases adenine and guanine and find that epsilonA is the most acidic. This supports the theory that AAG and other related enzymes may cleave damaged bases as anions. Furthermore, comparison of the gas phase and aqueous acidities indicates that the nonpolar environment of the enzyme enhances the acidity differences of epsilonA versus adenine and guanine. PMID:18593189

  2. Enhancement of the low-frequency response of a reflective semiconductor optical amplifier slow light-based microwave phase shifter by forced coherent population oscillations

    NASA Astrophysics Data System (ADS)

    Meehan, Aidan; Connelly, Michael J.

    2014-05-01

    The enhancement of the low frequency gain response of a microwave phase shifter based on slow light in a bulk reflective semiconductor optical amplifier (RSOA), by using forced coherent population oscillations (FCPO), is experimentally demonstrated. FCPO is achieved by simultaneously modulating the input optical power and bias current. The beat signal gain improvement ranges from 45 to 0 dB over a frequency range of 0.5 to 2.5 GHz, thereby improving the noise performance of the phase shifter. Tunable phase shifts of up to 40º are possible over this frequency range.

  3. High efficiency 160 Gb/s all-optical wavelength converter based on terahertz optical asymmetric demultiplexer with quantum dot semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Han, Huining; Zhang, Fangdi; Yang, Wei; Cai, Libo; Zhang, Min; Ye, Peida

    2007-11-01

    Proposed in this paper is a high efficient 160Gb/s all-optical wavelength converter based on terahertz optical asymmetric demultiplexer with quantum dot Semiconductor optical amplifier (QDSOA -TOAD). The performance of the wavelength converter under various operating conditions, such as different injected current densities, input pulse widths and input control pulse energies, is analyzed in terms of contrast ratio (CR) through numerical simulations. With the properly chosen parameters, a wavelength-converted signal with CR over 19.48 can be obtained.

  4. Integrated semiconductor optical sensors for cellular and neural imaging

    NASA Astrophysics Data System (ADS)

    Levi, Ofer; Lee, Thomas T.; Lee, Meredith M.; Smith, Stephen J.; Harris, James S.

    2007-04-01

    We review integrated optical sensors for functional brain imaging, localized index-of-refraction sensing as part of a lab-on-a-chip, and in vivo continuous monitoring of tumor and cancer stem cells. We present semiconductor-based sensors and imaging systems for these applications. Measured intrinsic optical signals and tissue optics simulations indicate the need for high dynamic range and low dark-current neural sensors. Simulated and measured reflectance spectra from our guided resonance filter demonstrate the capability for index-of-refraction sensing on cellular scales, compatible with integrated biosensors. Finally, we characterized a thermally evaporated emission filter that can be used to improve sensitivity for in vivo fluorescence sensing.

  5. Directional charge separation in isolated organic semiconductor crystalline nanowires

    NASA Astrophysics Data System (ADS)

    Labastide, J. A.; Thompson, H. B.; Marques, S. R.; Colella, N. S.; Briseno, A. L.; Barnes, M. D.

    2016-02-01

    One of the fundamental design paradigms in organic photovoltaic device engineering is based on the idea that charge separation is an extrinsically driven process requiring an interface for exciton fission. This idea has driven an enormous materials science engineering effort focused on construction of domain sizes commensurate with a nominal exciton diffusion length of order 10 nm. Here, we show that polarized optical excitation of isolated pristine crystalline nanowires of a small molecule n-type organic semiconductor, 7,8,15,16-tetraazaterrylene, generates a significant population of charge-separated polaron pairs along the π-stacking direction. Charge separation was signalled by pronounced power-law photoluminescence decay polarized along the same axis. In the transverse direction, we observed exponential decay associated with excitons localized on individual monomers. We propose that this effect derives from an intrinsic directional charge-transfer interaction that can ultimately be programmed by molecular packing geometry.

  6. Directional charge separation in isolated organic semiconductor crystalline nanowires.

    PubMed

    Labastide, J A; Thompson, H B; Marques, S R; Colella, N S; Briseno, A L; Barnes, M D

    2016-01-01

    One of the fundamental design paradigms in organic photovoltaic device engineering is based on the idea that charge separation is an extrinsically driven process requiring an interface for exciton fission. This idea has driven an enormous materials science engineering effort focused on construction of domain sizes commensurate with a nominal exciton diffusion length of order 10 nm. Here, we show that polarized optical excitation of isolated pristine crystalline nanowires of a small molecule n-type organic semiconductor, 7,8,15,16-tetraazaterrylene, generates a significant population of charge-separated polaron pairs along the π-stacking direction. Charge separation was signalled by pronounced power-law photoluminescence decay polarized along the same axis. In the transverse direction, we observed exponential decay associated with excitons localized on individual monomers. We propose that this effect derives from an intrinsic directional charge-transfer interaction that can ultimately be programmed by molecular packing geometry. PMID:26912040

  7. Directional charge separation in isolated organic semiconductor crystalline nanowires

    PubMed Central

    Labastide, J. A.; Thompson, H. B.; Marques, S. R.; Colella, N. S.; Briseno, A. L.; Barnes, M. D.

    2016-01-01

    One of the fundamental design paradigms in organic photovoltaic device engineering is based on the idea that charge separation is an extrinsically driven process requiring an interface for exciton fission. This idea has driven an enormous materials science engineering effort focused on construction of domain sizes commensurate with a nominal exciton diffusion length of order 10 nm. Here, we show that polarized optical excitation of isolated pristine crystalline nanowires of a small molecule n-type organic semiconductor, 7,8,15,16-tetraazaterrylene, generates a significant population of charge-separated polaron pairs along the π-stacking direction. Charge separation was signalled by pronounced power-law photoluminescence decay polarized along the same axis. In the transverse direction, we observed exponential decay associated with excitons localized on individual monomers. We propose that this effect derives from an intrinsic directional charge-transfer interaction that can ultimately be programmed by molecular packing geometry. PMID:26912040

  8. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  9. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  10. Wide band gap semiconductor templates

    DOEpatents

    Arendt, Paul N.; Stan, Liliana; Jia, Quanxi; DePaula, Raymond F.; Usov, Igor O.

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  11. High mobility emissive organic semiconductor

    PubMed Central

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  12. High mobility emissive organic semiconductor

    NASA Astrophysics Data System (ADS)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-12-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V-1 s-1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m-2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics.

  13. High mobility emissive organic semiconductor.

    PubMed

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm(2) V(-1) s(-1). Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m(-2) and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics.

  14. Organic Semiconductors and its Applications

    NASA Astrophysics Data System (ADS)

    Kamalasanan, M. N.

    2011-10-01

    Organic semiconductors in the form of evaporated or spin coated thin films have many optoelectronic applications in the present electronic industry. They are frequently used in many type of displays, photo detectors, photoconductors for photocopiers and photovoltaic cells. But many p-conjugated molecules and polymer based devices do not provide satisfactory device performance and operational stability. Most of these problems are related to the interfaces they make with other organic materials and electrodes and the low conductivity of the organic layers. The study of organic-metal and organic—organic interfaces as well as electrical doping of organic semiconductors are very important areas of research at present. In this talk, I will be discussing some of the recent advances in this field as well as some of our own results in the area of interface modification and electrical doping of organic semiconductors.

  15. Semiconductor sensor embedded microfluidic chip for protein biomarker detection using a bead-based immunoassay combined with deoxyribonucleic acid strand labeling.

    PubMed

    Lin, Yen-Heng; Peng, Po-Yu

    2015-04-15

    Two major issues need to be addressed in applying semiconductor biosensors to detecting proteins in immunoassays. First, the length of the antibody on the sensor surface surpasses the Debye lengths (approximately 1 nm, in normal ionic strength solution), preventing certain specifically bound proteins from being tightly attached to the sensor surface. Therefore, these proteins do not contribute to the sensor's surface potential change. Second, these proteins carry a small charge and can be easily affected by the pH of the surrounding solution. This study proposes a magnetic bead-based immunoassay using a secondary antibody to label negatively charged DNA fragments for signal amplification. An externally imposed magnetic force attaches the analyte tightly to the sensor surface, thereby effectively solving the problem of the analyte protein's distance to the sensor surface surpassing the Debye lengths. In addition, a normal ion intensity buffer can be used without dilution for the proposed method. Experiments revealed that the sensitivity can be improved by using a longer DNA fragment for labeling and smaller magnetic beads as solid support for the antibody. By using a 90 base pair DNA label, the signal was 15 times greater than that without labeling. In addition, by using a 120 nm magnetic bead, a minimum detection limit of 12.5 ng mL(-1) apolipoprotein A1 can be measured. Furthermore, this study integrates a semiconductor sensor with a microfluidic chip. With the help of microvalves and micromixers in the chip, the length of the mixing step for each immunoassay has been reduced from 1h to 20 min, and the sample volume has been reduced from 80 μL to 10 μL. In practice, a protein biomarker in a urinary bladder cancer patient's urine was successfully measured using this technique. This study provides a convenient and effective method to measure protein using a semiconductor sensor.

  16. Near-edge band structures and band gaps of Cu-based semiconductors predicted by the modified Becke-Johnson potential plus an on-site Coulomb U

    NASA Astrophysics Data System (ADS)

    Zhang, Yubo; Zhang, Jiawei; Gao, Weiwei; Abtew, Tesfaye A.; Wang, Youwei; Zhang, Peihong; Zhang, Wenqing

    2013-11-01

    Diamond-like Cu-based multinary semiconductors are a rich family of materials that hold promise in a wide range of applications. Unfortunately, accurate theoretical understanding of the electronic properties of these materials is hindered by the involvement of Cu d electrons. Density functional theory (DFT) based calculations using the local density approximation or generalized gradient approximation often give qualitative wrong electronic properties of these materials, especially for narrow-gap systems. The modified Becke-Johnson (mBJ) method has been shown to be a promising alternative to more elaborate theory such as the GW approximation for fast materials screening and predictions. However, straightforward applications of the mBJ method to these materials still encounter significant difficulties because of the insufficient treatment of the localized d electrons. We show that combining the promise of mBJ potential and the spirit of the well-established DFT + U method leads to a much improved description of the electronic structures, including the most challenging narrow-gap systems. A survey of the band gaps of about 20 Cu-based semiconductors calculated using the mBJ + U method shows that the results agree with reliable values to within ±0.2 eV.

  17. Intrinsic Fabry-Pérot cavity sensor based on chemical etching of a multimode graded index fiber spliced to a single mode fiber

    NASA Astrophysics Data System (ADS)

    Tafulo, Paula A. R.; Frazão, O.; Jorge, P. A. S.; Araújo, F. M.

    2010-09-01

    An intrinsic Fabry-Pérot cavity for high temperature and strain measurement is presented. The in-fibre cavity is formed by a chemical etched graded index optical fiber spliced to a single mode fiber. The intrinsic sensor obtained shows high sensitivity to strain (6.2 pm/μɛ) and rather low sensitivity to temperature (0.9 pm/°C), being suitable for applications as a strain gauge at high temperature.

  18. Semiconductor technology program: Progress briefs

    NASA Technical Reports Server (NTRS)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  19. A comparison between the method based on a rigorous field analysis and the impedance transformation method for the intrinsic surface impedance of superconductor films

    NASA Astrophysics Data System (ADS)

    Lee, J. H.; Lee, Sang Young

    2006-10-01

    In obtaining the intrinsic surface resistance (RS) from the effective surface resistance (RS,eff) measured at microwave frequencies by using the dielectric resonator method, the impedance transformation method reported by Klein et al. [N. Klein, H. Chaloupka, G. Muller, S. Orbach, H. Piel, B. Roas, L. Schultz, U. Klein, M. Peiniger, J. Appl. Phys. 67 (1990) 6940] has been very useful. Here we compared the RS of YBa2Cu3O7-δ (YBCO) films on dielectric substrates obtained by a rigorous field analysis based on the TE-mode matching method with those by the impedance transformation method. The two methods produced almost the same RS,eff vs. RS relation in most practical cases of the substrate thickness being less than 1 mm and sapphire and rutile used as the materials for the dielectric rod. However, when the resonant frequency of the dielectric resonator became close to that of the resonant structure formed by the substrates and the metallic surroundings, the RS,eff vs. RS relations appeared strikingly different between the two methods. Effects of the TE011-mode cutoff frequency inside the substrate region, which could not be considered in the impedance transformation method, on the relation between the RS,eff and RS of superconductor films are also investigated. We confirmed our arguments by demonstrating a case where existence of evanescent modes should be considered for obtaining the RS of YBCO films from the RS,eff.

  20. C-V measurements of micron diameter metal-oxide-semiconductor capacitors using a scanning-electron-microscope-based nanoprobe.

    PubMed

    Zheng, T; Jia, H; Wallace, R M; Gnade, B E

    2007-10-01

    The C-V electrical characterization of microstructures on a standard probe station is limited by the magnification of the imaging system and the precision of the probe manipulators. To overcome these limitations, we examine the combination of in situ electrical probing and a dual column scanning electron microscope/focused ion beam system. The imaging parameters and probing procedures are carefully chosen to reduce e-beam damage to the metal oxide semiconductor capacitor device under test. Estimation of shunt capacitance is critical when making femtofarad level measurements. C-V measurements of micron size metal-oxide-silicon capacitors are demonstrated. PMID:17979444

  1. Intrinsic Fabry-Perot interferometric fiber sensor based on ultra-short Bragg gratings for quasi-distributed strain and temperature measurements

    NASA Astrophysics Data System (ADS)

    Wang, Zhuang

    The health monitoring of smart structures in civil engineering is becoming more and more important as in-situ structural monitoring would greatly reduce structure life-cycle costs and improve reliability. The distributed strain and temperature sensing is highly desired in large structures where strain and temperature at over thousand points need to be measured simultaneously. It is difficult to carry out this task using conventional electrical strain sensors. Fiber optic sensors provide an excellent opportunity to fulfill this need due to their capability to multiplex many sensors along a single fiber cable. Numerous research studies have been conducted in past decades to increase the number of sensors to be multiplexed in a distributed sensor network. This dissertation presents detailed research work on the analysis, design, fabrication, testing, and evaluation of an intrinsic Fabry-Perot fiber optic sensor for quasi-distributed strain and temperature measurements. The sensor is based on two ultra-short and broadband reflection fiber Bragg gratings. One distinct feature of this sensor is its ultra low optical insertion loss, which allows a significant increase in the sensor multiplexing capability. Using a simple integrated sensor interrogation unit and an optical spectrum based signal processing algorithm, many sensors can be interrogated along a single optical fiber with high accuracy, high resolution and large dynamic range. Based on the experimental results and theoretical analysis, it is expected that more than 500 sensors can be multiplexed with little crosstalk using a frequency-division multiplexing technology. With this research, it is possible to build an easy fabrication, robust, high sensitivity and quasi-distributed fiber optic sensor network that can be operated reliably even in harsh environments or extended structures. This research was supported in part by U.S. National Science Foundation under grant CMS-0427951.

  2. A splitting scheme based on the space-time CE/SE method for solving multi-dimensional hydrodynamical models of semiconductor devices

    NASA Astrophysics Data System (ADS)

    Nisar, Ubaid Ahmed; Ashraf, Waqas; Qamar, Shamsul

    2016-08-01

    Numerical solutions of the hydrodynamical model of semiconductor devices are presented in one and two-space dimension. The model describes the charge transport in semiconductor devices. Mathematically, the models can be written as a convection-diffusion type system with a right hand side describing the relaxation effects and interaction with a self consistent electric field. The proposed numerical scheme is a splitting scheme based on the conservation element and solution element (CE/SE) method for hyperbolic step, and a semi-implicit scheme for the relaxation step. The numerical results of the suggested scheme are compared with the splitting scheme based on Nessyahu-Tadmor (NT) central scheme for convection step and the same semi-implicit scheme for the relaxation step. The effects of various parameters such as low field mobility, device length, lattice temperature and voltages for one-space dimensional hydrodynamic model are explored to further validate the generic applicability of the CE/SE method for the current model equations. A two dimensional simulation is also performed by CE/SE method for a MESFET device, producing results in good agreement with those obtained by NT-central scheme.

  3. Neural-based pile-up correction and ballistic deficit correction of X-ray semiconductor detectors using the Monte Carlo simulation and the Ramo theorem

    NASA Astrophysics Data System (ADS)

    Kafaee, Mahdi; Moussavi Zarandi, Ali; Taheri, Ali

    2016-03-01

    Pile-up distortion is a common problem in many nuclear radiation detection systems, especially in high count rates. It can be solved by hardware-based pile-up rejections, but there is no complete pile-up elimination in this way. Additionally, the methods can lead to poor quantitative results. Generally, time characteristics of semiconductor detector pulses are different from Scintillator detector pulses due to ballistic deficit. Hence, pulse processing-based pile-up correction in the detectors should consider this specification. In this paper, the artificial neural network pile-up correction method is applied for silicon detector piled-up pulses. For this purpose, the interaction of photons with a silicon detector is simulated by the MCNP4c code and the pulse current is calculated by Ramo's theorem. In this approach, we use a sub-Nyquist frequency sampling. The results show that the proposed method is reliable for pile-up correction and ballistic deficit in semiconductor detectors. The technique is remarkable for commercial considerations and high-speed, real-time calculations.

  4. Electrical conductivity, optical properties and mechanical stability of 3, 4, 9, 10-perylenetetracarboxylic dianhidride based organic semiconductor

    NASA Astrophysics Data System (ADS)

    Pandey, Mayank; Joshi, Girish M.; Deshmukh, Kalim; Nath Ghosh, Narendra; Nambi Raj, N. Arunai

    2015-05-01

    The 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) doped polymer films were prepared with Polypyrrole (PPy) and Polyvinyl alcohol (PVA) polymers by solution-casting. The change in structure and chemical composition of samples was identified by XRD and FTIR respectively. The UV-visible spectroscopy demonstrates the optical characteristics and band gap properties of sample. The homogeneous morphology of sample for higher wt% of PTCDA was examined by atomic force microscopy (AFM). The differential scanning calorimetry (DSC) results demonstrate the decrease in melting temperature (Tm) and degree of crystallinity (χc%) of polymeric organic semiconductor. The mechanical property demonstrates the high tensile strength and improved plasticity nature. Impedance spectroscopy was evaluated to determine the conductivity response of polymeric organic semiconductor. The highest DC conductivity (2.08×10-3 S/m) was obtained for 10 wt% of PTCDA at 140 °C. The decrease in activation energy (Ea) represents the non-Debye process and was evaluated from the slope of ln σdc vs. 103/T plot.

  5. Nonlinear current-voltage characteristics based on semiconductor nanowire networks enable a new concept in thermoelectric device optimization

    NASA Astrophysics Data System (ADS)

    Diaz Leon, Juan J.; Norris, Kate J.; Hartnett, Ryan J.; Garrett, Matthew P.; Tompa, Gary S.; Kobayashi, Nobuhiko P.

    2016-08-01

    Thermoelectric (TE) devices that produce electric power from heat are driven by a temperature gradient (Δ T = T_{{hot}} - T_{{cold}}, T hot: hot side temperature, T cold: cold side temperature) with respect to the average temperature ( T). While the resistance of TE devices changes as Δ T and/or T change, the current-voltage ( I- V) characteristics have consistently been shown to remain linear, which clips generated electric power ( P gen) within the given open-circuit voltage ( V OC) and short-circuit current ( I SC). This P gen clipping is altered when an appropriate nonlinearity is introduced to the I- V characteristics—increasing P gen. By analogy, photovoltaic cells with a large fill factor exhibit nonlinear I- V characteristics. In this paper, the concept of a unique TE device with nonlinear I- V characteristics is proposed and experimentally demonstrated. A single TE device with nonlinear I- V characteristics is fabricated by combining indium phosphide (InP) and silicon (Si) semiconductor nanowire networks. These TE devices show P gen that is more than 25 times larger than those of comparable devices with linear I- V characteristics. The plausible causes of the nonlinear I- V characteristics are discussed. The demonstrated concept suggests that there exists a new pathway to increase P gen of TE devices made of semiconductors.

  6. Toward Photochemical Water Splitting Using Band-Gap-Narrowed Semiconductors and Transition-Metal Based Molecular Catalysts

    SciTech Connect

    Muckerman,J.T.; Rodriguez, J.A.; Fujita, E.

    2009-06-07

    We are carrying out coordinated theoretical and experimental studies of toward photochemical water splitting using band-gap-narrowed semiconductors (BGNSCs) with attached multi-electron molecular water oxidation and hydrogen production catalysts. We focus on the coupling between the materials properties and the H{sub 2}O redox chemistry, with an emphasis on attaining a fundamental understanding of the individual elementary steps in the following four processes: (1) Light-harvesting and charge-separation of stable oxide or oxide-derived semiconductors for solar-driven water splitting, including the discovery and characterization of the behavior of such materials at the aqueous interface; (2) The catalysis of the four-electron water oxidation by dinuclear hydroxo transition-metal complexes with quinonoid ligands, and the rational search for improved catalysts; (3) Transfer of the design principles learned from the elucidation of the DuBois-type hydrogenase model catalysts in acetonitrile to the rational design of two-electron hydrogen production catalysts for aqueous solution; (4) Combining these three elements to examine the function of oxidation catalysts on BGNSC photoanode surfaces and hydrogen production catalysts on cathode surfaces at the aqueous interface to understand the challenges to the efficient coupling of the materials functions.

  7. Moving liquids with light: Photoelectrowetting on semiconductors

    PubMed Central

    Arscott, Steve

    2011-01-01

    By linking semiconductor physics and wetting phenomena a brand new effect termed “photoelectrowetting-on-semiconductors” is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a modification of the wetting contact angle of the droplet upon illumination using above band gap light. The effect is demonstrated using commercial silicon wafers, both n- and p-type having a doping range spanning four orders of magnitude (6×1014−8×1018 cm−3), coated with a commercial amorphous fluoropolymer insulating film (Teflon®). Impedance measurements confirm that the observations are semiconductor space-charge related effects. The impact of the work could lead to new silicon-based technologies in areas such as Laboratory-on-a-Chip, Microfluidics and Optofluidics. PMID:22355699

  8. Semiconductor Laser Low Frequency Noise Characterization

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Logan, Ronald T.

    1996-01-01

    This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

  9. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, R.; Pocha, M.D.

    1994-08-23

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  10. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, Rex; Pocha, Michael D.

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  11. Internal friction in intrinsic and n-type germanium and silicon

    NASA Astrophysics Data System (ADS)

    Gerk, A. P.; Williams, Wendell S.

    1982-05-01

    The dependence of the high-temperature internal friction of germanium and silicon, both intrinsic and highly n type, was measured as a function of temperature, frequency, dislocation density, and dopant concentration. An acoustoelectric peak in both germanium and silicon was detected and found to agree well with the theory of Weinreich. The high-temperature dislocation-dependent damping in intrinsic germanium and silicon was studied and seen to be consistent with most previous studies. If deformed at high temperature and allowed to anneal, highly doped n-type material behaved intrinsically due to preferential precipitation at dislocations; however, if deformed at moderate temperatures and not allowed to anneal, such crystals exhibited a greatly enhanced dislocation-dependent internal friction which depended on the extrinsic carrier concentration. A theory was developed for dislocation damping in semiconductors and was found to agree well with experimental results. The model is based upon electronic viscous damping of dislocations by excess current carriers whose lifetimes are controlled by Auger recombination processes.

  12. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOEpatents

    Yang, Peidong; Choi, Heonjin; Lee, Sangkwon; He, Rongrui; Zhang, Yanfeng; Kuykendal, Tevye; Pauzauskie, Peter

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  13. Semiconductor ohmic contact

    NASA Technical Reports Server (NTRS)

    Hawrylo, Frank Zygmunt (Inventor); Kressel, Henry (Inventor)

    1977-01-01

    A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.

  14. Monolayer MXenes: promising half-metals and spin gapless semiconductors

    NASA Astrophysics Data System (ADS)

    Gao, Guoying; Ding, Guangqian; Li, Jie; Yao, Kailun; Wu, Menghao; Qian, Meichun

    2016-04-01

    Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate using first-principles calculations that monolayers Ti2C and Ti2N exhibit nearly half-metallic ferromagnetism with the magnetic moments of 1.91 and 1.00μB per formula unit, respectively, while monolayer V2C is a metal with unstable antiferromagnetism, and monolayer V2N is a nonmagnetic metal. Interestingly, under a biaxial strain, there is a phase transition from a nearly half-metal to truly half-metal, spin gapless semiconductor, and metal for monolayer Ti2C. Monolayer Ti2N is still a nearly half-metal under a suitable biaxial strain. Large magnetic moments can be induced by the biaxial tensile and compressive strains for monolayer V2C and V2N, respectively. We also show that the structures of these four monolayer MXenes are stable according to the calculated formation energy and phonon spectrum. Our investigations suggest that, unlike monolayer graphene, monolayer MXenes Ti2C and Ti2N without vacancy, doping or external electric field exhibit intrinsic magnetism, especially the half-metallic ferromagnetism and spin gapless semiconductivity, which will stimulate further studies on possible spintronic applications for new two-dimensional materials of MXenes.

  15. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

    PubMed

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-01

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition.

  16. Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang; Li, Lin; Yuan, Ye; Rushforth, A. W.; Chen, Lin; Wang, Yutian; Böttger, R.; Heller, R.; Zhao, Jianhua; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Timm, C.; Helm, M.

    2016-08-01

    For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromagnetic semiconductors while keeping the Mn concentration constant. We monitor the change of Curie temperature (TC) and conductivity. For a broad range of samples including (Ga,Mn)As and (Ga,Mn)(As,P) with various Mn and P concentrations, we observe a smooth decrease of TC with carrier compensation over a wide temperature range while the conduction is changed from metallic to insulating. The existence of TC below 10 K is also confirmed in heavily compensated samples. Our experimental results are naturally explained within the valence-band picture.

  17. Effects of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane doping on diketopyrrolopyrrole-based, low crystalline, high mobility polymeric semiconductor

    SciTech Connect

    Yoon, Seongwon; Cho, Jangwhan; Chung, Dae Sung; Lee, Han-Koo; Park, Sungmin; Son, Hae Jung

    2015-09-28

    The effects of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) doping on diketopyrrolo-pyrrole-based polymeric semiconductors in terms of charge transport behavior and structural ordering are systematically investigated. Although the energy level offset between the polymeric semiconductor and the F4TCNQ acceptor was not particularly large, ultraviolet photoelectron spectroscopy analyses revealed that a low doping ratio of 1 wt. % is sufficient to tune the energy distance between the Fermi level and the HOMO level, reaching saturation at roughly 5 wt. %, which is further confirmed by the depletion mode measurements of field effect transistors (FETs). Structural analyses using grazing-incidence X-ray diffraction (GIXD) show that the overall degree of edge-on orientation is disturbed by the addition of dopants, with significant influence appearing at high doping ratios (>3 wt. %). The calculated charge carrier mobility from accumulation mode measurements of FETs showed a maximum value of 2 cm{sup 2}/V·s at the optimized doping ratio of 1%, enabled by additional holes in the channel region, which results in a roughly 40% increase relative to the undoped device. Further increases in the doping ratio, however, resulted in worse FET performance, which can be attributed to structural deformation. This result suggests that the electrochemical doping method can be also applied to donor-acceptor copolymers to further enhance their charge transport characteristics, once the optimized doping condition has been established.

  18. Vibronic states in organic semiconductors based on non-metal naphthalocyanine. Detection of heterocyclic phthalocyanine compounds in a flexible dielectric matrix

    SciTech Connect

    Belogorokhov, I. A.; Tikhonov, E. V.; Dronov, M. A.; Belogorokhova, L. I.; Ryabchikov, Yu. V.; Tomilova, L. G.; Khokhlov, D. R.

    2012-01-15

    The vibronic properties of semiconductor structures based on non-metal naphthalocyanine molecules are studied using IR and Raman spectroscopy methods. New absorption lines in the transmission spectra of such materials are detected and identified. Three transmission lines are observed in the range 2830-3028 cm{sup -1}, which characterize carbon-hydrogen bonds of peripheral molecular groups. Their spectral positions are 2959, 2906, and 2866 cm{sup -1}. It is detected that the phthalocyanine ring can also exhibit its specific vibronic properties in the Raman spectra at 767, 717, and 679 cm{sup -1}. The naphthalocyanine molecule in the organic dielectric matrix of microfibers is described using IR spectroscopy. It is shown that the set of vibrations characterizing the isoindol group, pyrrole ring, naphtha group, and C-H bonds, allows an accurate enough description of the vibronic states of the naphthalocyanine complex in complex heterostructures to be made. The spectral range with fundamental modes, characterizing a naphthalocyanine semiconductor in a heterostructure, is 600-1600 cm{sup -1}. A comparison of the compositions of complex systems with a similar heterostructure containing lutetium diphthalocyanine demonstrated few errors.

  19. Library Analog Semiconductor Devices SPICE Simulators

    SciTech Connect

    Deveney, Michael F.; Archer, Wendel; Bogdan, Carolyn W.

    1996-07-23

    SPICE-SANDIA.LIB is a library of parameter sets and macromodels of semiconductor devices. They are used with Spice-based (SPICE is a program for electronic circuit analysis) simulators to simulate electronic circuits.

  20. Isotopically engineered semiconductors

    NASA Astrophysics Data System (ADS)

    Haller, E. E.

    1995-04-01

    Scientific interest, technological promise, and increased availability of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This review of mostly recent activities begins with an introduction to some past classical experiments which have been performed on isotopically controlled semiconductors. A review of the natural isotopic composition of the relevant elements follows. Some materials aspects resulting in part from the high costs of enriched isotopes are discussed next. Raman spectroscopy studies with a number of isotopically pure and deliberately mixed Ge bulk crystals show that the Brillouin-zone-center optical phonons are not localized. Their lifetime is almost independent of isotopic disorder, leading to homogeneous Raman line broadening. Studies with short period isotope superlattices consisting of alternating layers of n atomic planes of 70Ge and 74Ge reveal a host of zone-center phonons due to Brillouin-zone folding. At n≳40 one observes two phonon lines at frequencies corresponding to the bulk values of the two isotopes. In natural diamond, isotope scattering of the low-energy phonons, which are responsible for the thermal conductivity, is very strongly affected by small isotope disorder. Isotopically pure 12C diamond crystals exhibit thermal conductivities as high as 410 W cm-1 K-1 at 104 K, leading to projected values of over 2000 W cm-1 K-1 near 80 K. The changes in phonon properties with isotopic composition also weakly affect the electronic band structures and the lattice constants. The latter isotope dependence is most relevant for future standards of length based on crystal lattice constants. Capture of thermal neutrons by isotope nuclei followed by nuclear decay produces new elements, resulting in a very large number of possibilities for isotope selective doping of semiconductors. This neutron transmutation of isotope nuclei, already used