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Sample records for intrinsic semiconductors based

  1. Near-infrared–to–visible highly selective thermal emitters based on an intrinsic semiconductor

    PubMed Central

    Asano, Takashi; Suemitsu, Masahiro; Hashimoto, Kohei; De Zoysa, Menaka; Shibahara, Tatsuya; Tsutsumi, Tatsunori; Noda, Susumu

    2016-01-01

    Control of the thermal emission spectra of emitters will result in improved energy utilization efficiency in a broad range of fields, including lighting, energy harvesting, and sensing. In particular, it is challenging to realize a highly selective thermal emitter in the near-infrared–to–visible range, in which unwanted thermal emission spectral components at longer wavelengths are significantly suppressed, whereas strong emission in the near-infrared–to–visible range is retained. To achieve this, we propose an emitter based on interband transitions in a nanostructured intrinsic semiconductor. The electron thermal fluctuations are first limited to the higher-frequency side of the spectrum, above the semiconductor bandgap, and are then enhanced by the photonic resonance of the structure. Theoretical calculations indicate that optimized intrinsic Si rod-array emitters with a rod radius of 105 nm can convert 59% of the input power into emission of wavelengths shorter than 1100 nm at 1400 K. It is also theoretically indicated that emitters with a rod radius of 190 nm can convert 84% of the input power into emission of <1800-nm wavelength at 1400 K. Experimentally, we fabricated a Si rod-array emitter that exhibited a high peak emissivity of 0.77 at a wavelength of 790 nm and a very low background emissivity of <0.02 to 0.05 at 1100 to 7000 nm, under operation at 1273 K. Use of a nanostructured intrinsic semiconductor that can withstand high temperatures is promising for the development of highly efficient thermal emitters operating in the near-infrared–to–visible range. PMID:28028532

  2. Near-infrared-to-visible highly selective thermal emitters based on an intrinsic semiconductor.

    PubMed

    Asano, Takashi; Suemitsu, Masahiro; Hashimoto, Kohei; De Zoysa, Menaka; Shibahara, Tatsuya; Tsutsumi, Tatsunori; Noda, Susumu

    2016-12-01

    Control of the thermal emission spectra of emitters will result in improved energy utilization efficiency in a broad range of fields, including lighting, energy harvesting, and sensing. In particular, it is challenging to realize a highly selective thermal emitter in the near-infrared-to-visible range, in which unwanted thermal emission spectral components at longer wavelengths are significantly suppressed, whereas strong emission in the near-infrared-to-visible range is retained. To achieve this, we propose an emitter based on interband transitions in a nanostructured intrinsic semiconductor. The electron thermal fluctuations are first limited to the higher-frequency side of the spectrum, above the semiconductor bandgap, and are then enhanced by the photonic resonance of the structure. Theoretical calculations indicate that optimized intrinsic Si rod-array emitters with a rod radius of 105 nm can convert 59% of the input power into emission of wavelengths shorter than 1100 nm at 1400 K. It is also theoretically indicated that emitters with a rod radius of 190 nm can convert 84% of the input power into emission of <1800-nm wavelength at 1400 K. Experimentally, we fabricated a Si rod-array emitter that exhibited a high peak emissivity of 0.77 at a wavelength of 790 nm and a very low background emissivity of <0.02 to 0.05 at 1100 to 7000 nm, under operation at 1273 K. Use of a nanostructured intrinsic semiconductor that can withstand high temperatures is promising for the development of highly efficient thermal emitters operating in the near-infrared-to-visible range.

  3. Intrinsic spin dynamics in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Valín-Rodríguez, Manuel

    2005-12-01

    We investigate the characteristic spin dynamics corresponding to semiconductor quantum dots within the multiband envelope function approximation (EFA). By numerically solving an 8 × 8 k·p Hamiltonian we treat systems based on different III-V semiconductor materials. It is shown that, even in the absence of an applied magnetic field, these systems show intrinsic spin dynamics governed by intraband and interband transitions leading to characteristic spin frequencies ranging from THz to optical frequencies.

  4. An intrinsically fluorescent recognition ligand scaffold based on chaperonin protein and semiconductor quantum-dot conjugates.

    PubMed

    Xie, Hongzhi; Li, Yi-Fen; Kagawa, Hiromi K; Trent, Jonathan D; Mudalige, Kumara; Cotlet, Mircea; Swanson, Basil I

    2009-05-01

    Genetic engineering of a novel protein-nanoparticle hybrid system with great potential for biosensing applications and for patterning of various types of nanoparticles is described. The hybrid system is based on a genetically modified chaperonin protein from the hyperthermophilic archaeon Sulfolobus shibatae. This chaperonin is an 18-subunit double ring, which self-assembles in the presence of Mg ions and ATP. Described here is a mutant chaperonin (His-beta-loopless, HBLL) with increased access to the central cavity and His-tags on each subunit extending into the central cavity. This mutant binds water-soluble semiconductor quantum dots, creating a protein-encapsulated fluorescent nanoparticle. The new bioconjugate has high affinity, in the order of strong antibody-antigen interactions, a one-to-one protein-nanoparticle stoichiometry, and high stability. By adding selective binding sites to the solvent-exposed regions of the chaperonin, this protein-nanoparticle bioconjugate becomes a sensor for specific targets.

  5. Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors

    SciTech Connect

    Lany, S.; Zunger, A.

    2008-01-01

    In III-V and II-VI semiconductors, certain nominally electron-donating impurities do not release electrons but instead form deep electron-traps known as 'DX centers.' While in these compounds, such traps occur only after the introduction of foreign impurity atoms, we find from first-principles calculations that in ternary I-III-VI{sub 2} chalcopyrites like CuInSe{sub 2} and CuGaSe{sub 2}, DX-like centers can develop without the presence of any extrinsic impurities. These intrinsic DX centers are suggested as a cause of the difficulties to maintain high efficiencies in CuInSe{sub 2}-based thin-film solar-cells when the band gap is increased by addition of Ga.

  6. NdN: An intrinsic ferromagnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Anton, E.-M.; McNulty, J. F.; Ruck, B. J.; Suzuki, M.; Mizumaki, M.; Antonov, V. N.; Quilty, J. W.; Strickland, N.; Trodahl, H. J.

    2016-02-01

    The rare-earth nitrides have recently regained attention due to findings that most members of the series are intrinsic ferromagnetic semiconductors, a class of materials that is crucial for the development of spintronics devices. Here we present a study of NdN thin films, with films grown via molecular beam epitaxy. Optical transmission measurements revealed a band gap of about 0.9 eV, while resistivity measurements confirmed semiconducting behavior with a negative temperature coefficient of resistance, though semimetallic behavior could not be ruled out. The room temperature resistivity of 0.6 m Ω cm indicates strong doping by nitrogen vacancies. Magnetization measurements show a ferromagnetic moment of 1.0 ±0.2 μB below the Curie temperature TC of 43 ±1 K, strongly suppressed from the Hund's rules value of 3.27 μB per ion. The ferromagnetic moment is strongly quenched and the TC is enhanced compared to previously studied bulk NdN, and crystal field calculations reveal that the quenched moment is likely due to lattice strain. X-ray magnetic circular dichroism measurements show that the magnetic moment is orbital dominant, placing NdN in the same category as SmN, an intrinsic ferromagnetic semiconductor with an orbital-dominant ferromagnetic moment.

  7. Evaluation of Intrinsic Charge Carrier Transport at Insulator-Semiconductor Interfaces Probed by a Non-Contact Microwave-Based Technique

    PubMed Central

    Honsho, Yoshihito; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Seki, Shu

    2013-01-01

    We have successfully designed the geometry of the microwave cavity and the thin metal electrode, achieving resonance of the microwave cavity with the metal-insulator-semiconductor (MIS) device structure. This very simple MIS device operates in the cavity, where charge carriers are injected quantitatively by an applied bias at the insulator-semiconductor interface. The local motion of the charge carriers was clearly probed through the applied external microwave field, also giving the quantitative responses to the injected charge carrier density and charge/discharge characteristics. By means of the present measurement system named field-induced time-resolved microwave conductivity (FI-TRMC), the pentacene thin film in the MIS device allowed the evaluation of the hole and electron mobility at the insulator-semiconductor interface of 6.3 and 0.34 cm2 V−1 s−1, respectively. This is the first report on the direct, intrinsic, non-contact measurement of charge carrier mobility at interfaces that has been fully experimentally verified. PMID:24212382

  8. Acoustically induced stark effect for excitons in intrinsic semiconductors.

    PubMed

    Ivanov, A L; Littlewood, P B

    2001-09-24

    A Stark effect for excitons parametrically driven by coherent acoustic phonons is proposed. Our scheme refers to a low-temperature intrinsic semiconductor or semiconductor nanostructure pumped by an acoustic wave (frequency band nu(ac) approximately equal to 1-40 GHz and intensity range I(ac) approximately equal to 10(-2)-10(2) W/cm(2)) and probed by low-intensity light. Tunable optical band gaps, which strongly change the spectral shape of the exciton line, are induced in the polariton spectrum by acoustic pumping. We develop an exactly solvable model of the acoustic Stark effect and apply our results to GaAs driven by bulk or surface acoustic waves.

  9. Extrinsic photoresponse enhancement under additional intrinsic photoexcitation in organic semiconductors

    SciTech Connect

    Kounavis, P.

    2016-06-28

    Dual light beam photoresponse experiments are employed to explore the photoresponse under simultaneous extrinsic and intrinsic photoexcitation of organic semiconductors. The photoresponse of a red modulated light extrinsic photoexcitation is found that can be significantly enhanced under an additional blue bias-light intrinsic photoexcitation in two terminal pentacene films on glass substrates. From the frequency resolved photoresponse, it is deduced that the phenomenon of photoresponse enhancement can be attributed to an increase in the extrinsic photogeneration rate of the red modulated light and/or an improvement of the drift velocity of carriers under an additional blue light intrinsic photoexcitation. The possible predominant extrinsic photogeneration mechanism, which can be compatible with the observed dependence of the photoresponse enhancement on the frequency and on the light intensities of the red and blue light excitation, is the singlet exciton dissociation through electron transfer to acceptor-like traps. Moreover, an improvement in the drift velocity of carriers traversing grain boundaries with potential energy barriers, which may be reduced by trapping of minority carriers created from the intrinsic photoexcitation, may partly contribute to the photoresponse enhancement.

  10. Intrinsic charge trapping in organic and polymeric semiconductors: a physical chemistry perspective

    SciTech Connect

    Kaake, Loren; Barbara, Paul F.; Zhu, Xiaoyang

    2010-01-12

    We aim to understand the origins of intrinsic charge carrier traps in organic and polymeric semiconductor materials from a physical chemistry perspective. In crystalline organic semiconductors, we point out some of the inadequacies in the description of intrinsic charge traps using language and concepts developed for inorganic semiconductors. In π-conjugated polymeric semiconductors, we suggest the presence of a two-tier electronic energy landscape, a bimodal majority landscape due to two dominant structural motifs and a minority electronic energy landscape from intrinsic charged defects. The bimodal majority electronic energy landscape results from a combination of amorphous domains and microcrystalline or liquid-crystalline domains. The minority tier of the electronic density of states is comprised of deep Coulomb traps embedded in the majority electronic energy landscape. This minority electronic energy landscape may dominate transport properties at low charge carrier densities, such as those expected for organic photovoltaic devices, while the bimodal majority electronic energy landscape becomes significant at high carrier densities, that is, in organic field effect transistors.

  11. New concept to break the intrinsic properties of organic semiconductors for optical sensing applications

    NASA Astrophysics Data System (ADS)

    Choy, Wallace C. H.

    2015-09-01

    As the intrinsic electrostatic limit, space charge limit (SCL) for photocurrent is a universal phenomenon which is fundamental important for organic semiconductors. We will demonstrate SCL breaking by a new plasmonic-electrical concept. As a proof-ofconcept, organic solar cells (OSCs) comprising metallic planar and grating electrodes are studied. Interestingly, although strong plasmonic resonances induce abnormally dense photocarriers around a grating anode, the grating incorporated inverted OSC is exempt from space charge accumulation (limit) and degradation of electrical properties. The plasmonic-electrical concept will open up a new way to manipulate both optical and electrical properties of semiconductor devices simultaneously.

  12. Quantum plasmon model for the terahertz photoconductivity in intrinsic semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Yan, Jie-Yun

    2017-10-01

    A quantum plasmon model for the terahertz photoconductivity in intrinsic semiconductor nanowires is developed. The classical plasmon model assumes the excited electron in semiconductors feels a restoring force generated by a harmonic-oscillator potential. Although it is successfully applied to explain the terahertz photoconductivity in semiconductor nanowires, the classical treatment of the potential weakens accurate theoretical analysis. Here I treat the potential in a full quantum way and present an exact analytical formula for photoconductivity. The formula not only gives more reasonable photoconductivity, but also has the same conciseness when compared with that of the classical plasmon model. The validity of the quantum plasmon model is proved independently by numerical calculations in real space.

  13. Quantum plasmon model for the terahertz photoconductivity in intrinsic semiconductor nanowires.

    PubMed

    Yan, Jie-Yun

    2017-10-18

    A quantum plasmon model for the terahertz photoconductivity in intrinsic semiconductor nanowires is developed. The classical plasmon model assumes the excited electron in semiconductors feels a restoring force generated by a harmonic-oscillator potential. Although it is successfully applied to explain the terahertz photoconductivity in semiconductor nanowires, the classical treatment of the potential weakens accurate theoretical analysis. Here I treat the potential in a full quantum way and present an exact analytical formula for photoconductivity. The formula not only gives more reasonable photoconductivity, but also has the same conciseness when compared with that of the classical plasmon model. The validity of the quantum plasmon model is proved independently by numerical calculations in real space.

  14. Thienoacene-based organic semiconductors.

    PubMed

    Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

    2011-10-11

    Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Trodahl, H. J.; Natali, F.; Ruck, B. J.; Lambrecht, W. R. L.

    2017-09-01

    The intrinsic ferromagnetic semiconductor GdN offers a unique opportunity to separate the anomalous and ordinary contributions to the Hall effect, and to investigate the strength of the anomalous Hall effect (AHE) as a function of carrier concentration and relaxation time. The data show an AHE that is inversely proportional to the carrier concentration n in a single spin channel. There is no dependence at all on the relaxation time τ , rather than the usual τ1 or τ2 dependencies predicted by conventional mechanisms. However, the n and τ dependencies are identical to those of the ordinary Hall effect, which suggests a semiclassical wave-packet description of an intrinsic AHE contribution that ultimately provides a quantitative agreement with the data.

  16. Thermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSn O3

    NASA Astrophysics Data System (ADS)

    Sanchela, Anup V.; Onozato, Takaki; Feng, Bin; Ikuhara, Yuichi; Ohta, Hiromichi

    2017-08-01

    The exact intrinsic carrier effective mass m* of a well-studied transparent oxide semiconductor BaSn O3 is unknown because the reported m* values are scattered from 0.06 m0 to 3.7 m0 . This paper identifies the intrinsic m* of BaSn O3,m*=0.40 ±0.01 m0 , by the thermopower modulation clarification method and determines the threshold of the degenerate/nondegenerate semiconductor. At the threshold, the thermopower values of both the La-doped BaSn O3 and BaSn O3 thin-film transistor structures are 240 μ V K-1 , the bulk carrier concentration is 1.4 ×1019c m-3 , and the two-dimensional sheet carrier concentration is 1.8 ×1012c m-2 . When the Fermi energy EF is located above the parabolic shaped conduction band bottom, the mobility is rather high. In contrast, EF below the threshold exhibits a very low carrier mobility, most likely because the tail states suppress the carrier mobility. The present results are useful to further develop BaSn O3 -based oxide electronics.

  17. Intrinsic delay of permeable base transistor

    SciTech Connect

    Chen, Wenchao; Guo, Jing; So, Franky

    2014-07-28

    Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barrier height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of ∼10 cm{sup 2}/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations.

  18. Photogenerated Intrinsic Free Carriers in Small-molecule Organic Semiconductors Visualized by Ultrafast Spectroscopy

    NASA Astrophysics Data System (ADS)

    He, Xiaochuan; Zhu, Gangbei; Yang, Jianbing; Chang, Hao; Meng, Qingyu; Zhao, Hongwu; Zhou, Xin; Yue, Shuai; Wang, Zhuan; Shi, Jinan; Gu, Lin; Yan, Donghang; Weng, Yuxiang

    2015-11-01

    Confirmation of direct photogeneration of intrinsic delocalized free carriers in small-molecule organic semiconductors has been a long-sought but unsolved issue, which is of fundamental significance to its application in photo-electric devices. Although the excitonic description of photoexcitation in these materials has been widely accepted, this concept is challenged by recently reported phenomena. Here we report observation of direct delocalized free carrier generation upon interband photoexcitation in highly crystalline zinc phthalocyanine films prepared by the weak epitaxy growth method using ultrafast spectroscopy. Transient absorption spectra spanning the visible to mid-infrared region revealed the existence of short-lived free electrons and holes with a diffusion length estimated to cross at least 11 molecules along the π-π stacking direction that subsequently localize to form charge transfer excitons. The interband transition was evidenced by ultraviolet-visible absorption, photoluminescence and electroluminescence spectroscopy. Our results suggest that delocalized free carriers photogeneration can also be achieved in organic semiconductors when the molecules are packed properly.

  19. Intrinsic coherent acoustic phonons in the indirect band gap semiconductors Si and GaP

    NASA Astrophysics Data System (ADS)

    Ishioka, Kunie; Rustagi, Avinash; Höfer, Ulrich; Petek, Hrvoje; Stanton, Christopher J.

    2017-01-01

    We report on the intrinsic optical generation and detection of coherent acoustic phonons at (001)-oriented bulk Si and GaP without metallic phonon transducer structures. Photoexcitation by a 3.1-eV laser pulse generates a normal strain pulse within the ˜100 -nm penetration depth in both semiconductors. The subsequent propagation of the strain pulse into the bulk is detected with a delayed optical probe as a periodic modulation of the optical reflectivity. Our theoretical model explains quantitatively the generation of the acoustic pulse via the deformation potential electron-phonon coupling and detection in terms of the spatially and temporally dependent photoelastic effect for both semiconductors. Comparison with our theoretical model reveals that the experimental strain pulses have finite buildup times of 1.2 and 0.4 ps for GaP and Si, which are comparable with the time required for the photoexcited electrons to transfer to the lowest X valley through intervalley scattering. The deformation potential coupling related to the acoustic pulse generation for GaP is estimated to be twice as strong as that for Si from our experiments, in agreement with a previous theoretical prediction.

  20. Photogenerated Intrinsic Free Carriers in Small-molecule Organic Semiconductors Visualized by Ultrafast Spectroscopy

    PubMed Central

    He, Xiaochuan; Zhu, Gangbei; Yang, Jianbing; Chang, Hao; Meng, Qingyu; Zhao, Hongwu; Zhou, Xin; Yue, Shuai; Wang, Zhuan; Shi, Jinan; Gu, Lin; Yan, Donghang; Weng, Yuxiang

    2015-01-01

    Confirmation of direct photogeneration of intrinsic delocalized free carriers in small-molecule organic semiconductors has been a long-sought but unsolved issue, which is of fundamental significance to its application in photo-electric devices. Although the excitonic description of photoexcitation in these materials has been widely accepted, this concept is challenged by recently reported phenomena. Here we report observation of direct delocalized free carrier generation upon interband photoexcitation in highly crystalline zinc phthalocyanine films prepared by the weak epitaxy growth method using ultrafast spectroscopy. Transient absorption spectra spanning the visible to mid-infrared region revealed the existence of short-lived free electrons and holes with a diffusion length estimated to cross at least 11 molecules along the π−π stacking direction that subsequently localize to form charge transfer excitons. The interband transition was evidenced by ultraviolet-visible absorption, photoluminescence and electroluminescence spectroscopy. Our results suggest that delocalized free carriers photogeneration can also be achieved in organic semiconductors when the molecules are packed properly. PMID:26611323

  1. Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu2ZnSnS4

    NASA Astrophysics Data System (ADS)

    Chen, Shiyou; Yang, Ji-Hui; Gong, X. G.; Walsh, Aron; Wei, Su-Huai

    2010-06-01

    Current knowledge of the intrinsic defect properties of Cu2ZnSnS4 (CZTS) is limited, which is hindering further improvement of the performance of CZTS-based solar cells. Here, we have performed first-principles calculations for a series of intrinsic defects and defect complexes in CZTS, from which we have the following observations. (i) It is important to control the elemental chemical potentials during crystal growth to avoid the formation of secondary phases such as ZnS, CuS, and Cu2SnS3 . (ii) The intrinsic p -type conductivity is attributed to the CuZn antisite which has a lower formation energy and relatively deeper acceptor level compared to the Cu vacancy. (iii) The low formation energy of many of the acceptor defects will lead to the intrinsic p -type character, i.e., n -type doping is very difficult in this system. (iv) The role of electrically neutral defect complexes is predicted to be important, because they have remarkably low formation energies and electronically passivate deep levels in the band gap. For example, [CuZn-+ZnCu+] , [VCu-+ZnCu+] , and [ZnSn2-+2ZnCu+] may form easily in nonstoichiometric samples. The band alignment between Cu2ZnSnS4 , CuInSe2 and the solar-cell window layer CdS has also been calculated, revealing that a type-II band alignment exists for the CdS/Cu2ZnSnS4 heterojunction. The fundamental differences between CZTS and CuInSe2 for use in thin-film photovoltaics are discussed. The results are expected to be relevant to other I2-II-IV-VI4 semiconductors.

  2. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  3. Intrinsic ferromagnetic properties in Cr-doped ZnO diluted magnetic semiconductors

    SciTech Connect

    Liu Yang; Yang Yanting; Yang Jinghai; Guan Qingfeng; Liu Huilian; Yang Lili; Zhang Yongjun; Wang Yaxin; Wei Maobin; Liu Xiaoyan; Fei Lianhua; Cheng Xin

    2011-05-15

    The Cr-doped zinc oxide (Zn{sub 1-x}Cr{sub x}O, 0{<=}x{<=}0.08) diluted magnetic semiconductors have been synthesized successfully by the sol-gel method. Investigations on magnetic, optical and structural properties of the produced samples have been done. Energy dispersive spectroscopy (EDS) shows the existence of Cr ion in the Cr-doped ZnO. The results of X-ray diffraction (XRD), the transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine structure (XAFS) indicate that the Cr ions are at least partially substitutionally incorporated into the crystal lattice of ZnO. The produced samples show good high-T{sub c} (Curie temperature) ferromagnetism (FM) in Cr-doped ZnO nanoparticles with Cr concentration of less than 5 at%. The results of photoluminescence (PL) further testify that FM is an intrinsic property of the Cr-doped ZnO nanoparticles. And the occurrence of FM should mainly contribute to the Cr doping. -- Graphical Abstract: As can be seen from the magnetic hysteresis loops of Zn{sub 1-x}Cr{sub x}O (x=0.01, 0.03, 0.05, and 0.08) at room temperature under 10 KOe, the samples show good high-T{sub c} ferromagnetism with Cr concentration of less than 5 at%. Display Omitted Highlights: {yields} Zn{sub 1-x}Cr{sub x}O(0{<=}x{<=}0.08) nanoparticles are successfully synthesized by sol-gel method. {yields} The Cr ions are substitutionally incorporated into the crystal lattice of ZnO. {yields} The Cr-doped ZnO nanoparticles show good high-T{sub c} ferromagnetism. {yields} The ferromagnetism is an intrinsic property of the Cr-doped ZnO nanoparticles.

  4. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  5. Cytotoxicity of semiconductor nanoparticles in A549 cells is attributable to their intrinsic oxidant activity

    NASA Astrophysics Data System (ADS)

    Escamilla-Rivera, Vicente; Uribe-Ramirez, Marisela; Gonzalez-Pozos, Sirenia; Velumani, Subramaniam; Arreola-Mendoza, Laura; De Vizcaya-Ruiz, Andrea

    2016-04-01

    Copper indium gallium diselenide (CIGS) and cadmium sulfide (CdS) nanoparticles (NP) are next generation semiconductors used in photovoltaic cells (PV). They possess high quantum efficiency, absorption coefficient, and cheaper manufacturing costs compared to silicon. Due to their potential for an industrial development and the lack of information about the risk associated in their use, we investigated the influence of the physicochemical characteristics of CIGS (9 nm) and CdS (20 nm) in relation to the induction of cytotoxicity in human alveolar A549 cells through ROS generation and mitochondrial dysfunction. CIGS induced cytotoxicity in a dose dependent manner in lower concentrations than CdS; both NP were able to induce ROS in A549. Moreover, CIGS interact directly with mitochondria inducing depolarization that leads to the induction of apoptosis compared to CdS. Antioxidant pretreatment significantly prevented the loss of mitochondrial membrane potential and cytotoxicity, suggesting ROS generation as the main cytotoxic mechanism. These results demonstrate that semiconductor characteristics of NP are crucial for the type and intensity of the cytotoxic effects. Our work provides relevant information that may help guide the production of a safer NP-based PV technologies, and would be a valuable resource on future risk assessment for a safer use of nanotechnology in the development of clean sources of renewable energy.

  6. Optical Biosensors Based on Semiconductor Nanostructures

    PubMed Central

    Martín-Palma, Raúl J.; Manso, Miguel; Torres-Costa, Vicente

    2009-01-01

    The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented. PMID:22346691

  7. Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.

    PubMed

    Lee, Hee Sung; Baik, Seung Su; Lee, Kimoon; Min, Sung-Wook; Jeon, Pyo Jin; Kim, Jin Sung; Choi, Kyujin; Choi, Hyoung Joon; Kim, Jae Hoon; Im, Seongil

    2015-08-25

    Molybdenum disulfide (MoS2) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor (MIS) FETs, where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Moreover, thin MoS2 MISFETs have always shown large hysteresis with unpredictable negative threshold voltages. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) using NiOx Schottky electrode which makes van der Waals interface with MoS2. We thus expect that the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by interface traps or an on-state gate field. Our MESFETs with a few and ∼10 layer MoS2 demonstrate intrinsic-like high mobilities of 500-1200 cm(2)/(V s) at a certain low threshold voltage between -1 and -2 V without much hysteresis. Moreover, they work as a high speed and highly sensitive phototransistor with 2 ms switching and ∼5000 A/W, respectively, supporting their high intrinsic mobility results.

  8. Neutron hardness of silicon-based semiconductor devices

    SciTech Connect

    Baratta, A.J.; Kenney, E.S.

    1988-01-01

    The effects of radiation on silicon-based semiconductor devices have been the subject of research for many years. In an effort to understand these effects, a series of experiments was conducted on gamma-hardened MOSFETs. Experiments concentrated on MOSFETs in rad-hard form and on off-the-shelf items. Because of the need to maintain bias voltages at set levels to enhance damage and because of concerns over possible rapid annealing, active testing during irradiation was performed. In general, MOSFETs are expected to perform well in fast neutron environments. With the advances in rad-hard technologies, exposures to several-megarad gamma rays can be tolerated. In nuclear systems, the normal concurrent neutron fluence can reach over 10{sup 16} n/cm{sup 2}. At these levels, current research indicates that the devices fail. Such failure is not altogether unexpected, although the degree of induced structural disorder in the semiconductor's crystalline makeup is still small. However, the damage done appears to carry the silicon back to a nearly intrinsic state. Knowing that each primary knock-on atom causes 10 to 6000 secondary atomic dislocations, the fluences of 10{sup 16}/cm{sup 2} are clearly at a level able to markedly change semiconductor dopant-induced behavior. Thus, one can conclude that for current devices, the gamma dose in a mixed neutron gamma field may no longer be limiting.

  9. Ferromagnet/semiconductor based spintronic devices

    NASA Astrophysics Data System (ADS)

    Saha, Dipankar

    Spintronics is an emerging field which is great interest for its potential to provide high-speed and low-power novel devices and eventually replace and/or complement conventional silicon-based metal-oxide-semiconductor (MOS) devices. Spin-based optoelectronic devices provide improved laser performance and polarized light sources for secure communication. Spintronics has therefore received a lot of interest with the potential for conventional and novel applications. Spintronics has been investigated both in all-metal and semiconductor based platforms. Spin-based ferromagnet/semiconductor heterojunction devices are particularly attractive compared to all-metal spintronic devices due to the versatility and the long electron spin coherence time in semiconductors. Here we have investigated semiconductor based spintronic devices for logic, memory and communication applications. We have demonstrated electrical injection and detection of spin in a MnAs/GaAs lateral spin valve. A peak magnetoresistance of 3.6% at 10 K and 1.1% at 125 K have been measured in these devices. Spin polarization in semiconductors is usually very small and difficult to detect. We have therefore theoretically designed and experimentally demonstrated a spin-current amplifier to alleviate this problem. A spin polarization of 100% has been measured at 150 K in these devices. We have emphasized the importance of finite sizes of ferromagnetic contact pads in terms of two-dimensional spin-diffusion in lateral spintronic devices, which enhances spin-polarization. We have discovered a new phenomenon observing electrically driven spin-dynamics of paramagnetic impurities. We have demonstrated a spin-capacitor using this novel phenomenon. In this study we have also demonstrated a spin-polarized quantum dot spin-laser which is a fundamental spin-based optoelectronic device. An output circular polarization of 8% and threshold current reduction of 14% have been measured at 200 K. We have also demonstrated

  10. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices

    NASA Astrophysics Data System (ADS)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong

    2009-12-01

    This special cluster of Journal of Physics D: Applied Physics reports proceedings from the Frontiers in Semiconductor-Based Devices Symposium, held in honor of the 60th birthday of Professor Pallab Bhattacharya by his former doctoral students. The symposium took place at the University of Michigan, Ann Arbor on 6-7 December 2009. Pallab Bhattacharya has served on the faculty of the Electrical Engineering and Computer Science Department at the University of Michigan, Ann Arbor for 25 years. During this time, he has made pioneering contributions to semiconductor epitaxy, characterization of strained heterostructures, self-organized quantum dots, quantum-dot optoelectronic devices, and integrated optoelectronics. Professor Bhattacharya has been recognized for his accomplishments by membership of the National Academy of Engineering, by chaired professorships (Charles M Vest Distinguished University Professor and James R Mellor Professor of Engineering), and by selection as a Fellow of the IEEE, among numerous other honors and awards. Professor Bhattacharya has also made remarkable contributions in education, including authorship of the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition) and the production of 60 PhD students (and counting). In fact, this development of critical human resources is one of the biggest impacts of Professor Bhattacharya's career. His guidance and dedication have shaped the varied professional paths of his students, many of whom currently enjoy successful careers in academia, industry, and government around the world. This special cluster acknowledges the importance of Professor Bhattacharya's influence as all of the contributions are from his former doctoral students. The symposium reflects the significant impact of Professor Bhattacharya's research in that the topics span diverse, critical research areas, including: semiconductor lasers and modulators, nanoscale quantum structure-based devices, flexible CMOS-based

  11. Rubbery electronics and sensors from intrinsically stretchable elastomeric composites of semiconductors and conductors

    PubMed Central

    Kim, Hae-Jin; Sim, Kyoseung; Thukral, Anish; Yu, Cunjiang

    2017-01-01

    A general strategy to impart mechanical stretchability to stretchable electronics involves engineering materials into special architectures to accommodate or eliminate the mechanical strain in nonstretchable electronic materials while stretched. We introduce an all solution–processed type of electronics and sensors that are rubbery and intrinsically stretchable as an outcome from all the elastomeric materials in percolated composite formats with P3HT-NFs [poly(3-hexylthiophene-2,5-diyl) nanofibrils] and AuNP-AgNW (Au nanoparticles with conformally coated silver nanowires) in PDMS (polydimethylsiloxane). The fabricated thin-film transistors retain their electrical performances by more than 55% upon 50% stretching and exhibit one of the highest P3HT-based field-effect mobilities of 1.4 cm2/V∙s, owing to crystallinity improvement. Rubbery sensors, which include strain, pressure, and temperature sensors, show reliable sensing capabilities and are exploited as smart skins that enable gesture translation for sign language alphabet and haptic sensing for robotics to illustrate one of the applications of the sensors. PMID:28913428

  12. Semiconductor nanocrystal-based phagokinetic tracking

    DOEpatents

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  13. Estimation of entropy rate in a fast physical random-bit generator using a chaotic semiconductor laser with intrinsic noise.

    PubMed

    Mikami, Takuya; Kanno, Kazutaka; Aoyama, Kota; Uchida, Atsushi; Ikeguchi, Tohru; Harayama, Takahisa; Sunada, Satoshi; Arai, Ken-ichi; Yoshimura, Kazuyuki; Davis, Peter

    2012-01-01

    We analyze the time for growth of bit entropy when generating nondeterministic bits using a chaotic semiconductor laser model. The mechanism for generating nondeterministic bits is modeled as a 1-bit sampling of the intensity of light output. Microscopic noise results in an ensemble of trajectories whose bit entropy increases with time. The time for the growth of bit entropy, called the memory time, depends on both noise strength and laser dynamics. It is shown that the average memory time decreases logarithmically with increase in noise strength. It is argued that the ratio of change in average memory time with change in logarithm of noise strength can be used to estimate the intrinsic dynamical entropy rate for this method of random bit generation. It is also shown that in this model the entropy rate corresponds to the maximum Lyapunov exponent.

  14. Tricritical behavior of the two-dimensional intrinsically ferromagnetic semiconductor CrGeTe3

    NASA Astrophysics Data System (ADS)

    Lin, G. T.; Zhuang, H. L.; Luo, X.; Liu, B. J.; Chen, F. C.; Yan, J.; Sun, Y.; Zhou, J.; Lu, W. J.; Tong, P.; Sheng, Z. G.; Qu, Z.; Song, W. H.; Zhu, X. B.; Sun, Y. P.

    2017-06-01

    CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate the critical behavior of CrGeTe3 around the second-order paramagnetic-ferromagnetic phase transition. We obtain the critical exponents estimated by several common experimental techniques including the modified Arrott plot, Kouvel-Fisher method, and critical isotherm analysis, which show that the magnetism of CrGeTe3 follows the tricritical mean-field model with the critical exponents β , γ , and δ of 0.240 ±0.006 , 1.000 ±0.005 , and 5.070 ±0.006 , respectively, at the Curie temperature of 67.9 K. We therefore suggest that the magnetic phase transition from 2D to 3D for CrGeTe3 should locate near a tricritical point. Our experiment provides a direct demonstration of the applicability of the tricritical mean-field model to a 2D ferromagnetic semiconductor.

  15. Mechanical properties of organic semiconductors for mechanically stable and intrinsically stretchable solar cells (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Lipomi, Darren J.

    2016-09-01

    This presentation describes my group's efforts to understand the molecular and microstructural basis for the mechanical properties of organic semiconductors for organic photovoltaic (OPV) devices. Our work is motivated by two goals. The first goal is to mitigate mechanical forms of degradation of printed modules during roll-to-roll fabrication, installation, and environmental forces—i.e., wind, rain, snow, and thermal expansion and contraction. Mechanical stability is a prerequisite for inexpensive processing on flexible substrates: to encapsulate devices in glass is to surrender this advantage. The second goal is to enable the next generation of ultra-flexible and stretchable solar cells for collapsible, portable, and wearable applications, and as low-cost sources of energy—"solar tarps"—for disaster relief and for the developing world. It may seem that organic semiconductors, due to their carbon framework, are already sufficiently compliant for these applications. We have found, however, that the mechanical properties (stiffness and brittleness) occupy a wide range of values, and can be difficult to predict from molecular structure alone. We are developing an experimental and theoretical framework for how one can combine favorable charge-transport properties and mechanical compliance in organic semiconductor films. In particular, we have explored the roles of the backbone, alkyl side chain, microstructural order, the glass transition, molecular packing with fullerenes, plasticizing effects of additives, extent of separation of [60]PCBM and [70]PCBM, structural randomness in low-bandgap polymers, and reinforcement by encapsulation, on the mechanical compliance. We are exploring the applicability of semi-empirical "back-of-the-envelope" models, along with multi-scale molecular dynamics simulations, with the ultimate goal of designing electroactive organic materials whose mechanical properties can be dialed-in. We have used the insights we have developed to

  16. Reaction-diffusion optoelectronics based on dispersed semiconductors

    NASA Astrophysics Data System (ADS)

    Gradov, O. V.; Gradova, M. A.

    2015-11-01

    Since many dispersed semiconductors are capable of light energy conversion and possess photocatalytic and luminescent properties, and any discreet light-sensitive medium can be applied for the positional-sensitive light flux registration (similar to pixels and voxels in semiconductor-based image recording), the use of chemically active dispersed semiconductors allows to perform a direct signal / image registration based on light-sensitive reaction-diffusion redox systems without conventional CCD / CMOS devices. The image capturing in this case will correspond to the formation of the metastable dissipative structures in the active medium, with their morphological properties determined by the flux gradient and provided by the corresponding dispersed semiconductor medium sensitivity.

  17. Contrast Enhancement Based on Intrinsic Image Decomposition.

    PubMed

    Yue, Huanjing; Yang, Jingyu; Sun, Xiaoyan; Wu, Feng; Hou, Chunping

    2017-05-10

    In this paper, we propose to introduce intrinsic image decomposition priors into decomposition models for contrast enhancement. Since image decomposition is a highly ill-posed problem, we introduce constraints on both reflectance and illumination layers to yield a highly reliable solution. We regularize the reflectance layer to be piecewise constant by introducing a weighted `1 norm constraint on neighboring pixels according to the color similarity, so that the decomposed reflectance would not be affected much by the illumination information. The illumination layer is regularized by a piecewise smoothness constraint. The proposed model is effectively solved by the Split Bregman algorithm. Then, by adjusting the illumination layer, we obtain the enhancement result. To avoid potential color artifacts introduced by illumination adjusting and reduce computing complexity, the proposed decomposition model is performed on the value channel in HSV space. Experiment results demonstrate that the proposed method performs well for a wide variety of images, and achieves better or comparable subjective and objective quality compared with state-of-the-art methods.

  18. Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping

    NASA Astrophysics Data System (ADS)

    Fu, Yajun; Long, Mingsheng; Gao, Anyuan; Wang, Yu; Pan, Chen; Liu, Xiaowei; Zeng, Junwen; Xu, Kang; Zhang, Lili; Liu, Erfu; Hu, Weida; Wang, Xiaomu; Miao, Feng

    2017-07-01

    Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which originates from chalcogen vacancies, obtaining intrinsic high-quality p-type semiconducting TMDs has been challenging. Here, we report an experimental approach to obtain intrinsic p-type Tungsten (W)-based TMDs by substitutional Ta-doping. The obtained few-layer Ta-doped WSe2 (Ta0.01W0.99Se2) field-effect transistor devices exhibit competitive p-type performances, including ˜106 current on/off at room temperature. We also demonstrate high quality van der Waals (vdW) p-n heterojunctions based on Ta0.01W0.99Se2/MoS2 structure, which exhibit nearly ideal diode characteristics (with an ideality factor approaching 1 and a rectification ratio up to 1 × 105) and excellent photodetecting performance. Our study suggests that substitutional Ta-doping holds great promise to realize intrinsic p-type W-based TMDs for future electronic and photonic applications.

  19. Intrinsic feature-based pose measurement for imaging motion compensation

    DOEpatents

    Baba, Justin S.; Goddard, Jr., James Samuel

    2014-08-19

    Systems and methods for generating motion corrected tomographic images are provided. A method includes obtaining first images of a region of interest (ROI) to be imaged and associated with a first time, where the first images are associated with different positions and orientations with respect to the ROI. The method also includes defining an active region in the each of the first images and selecting intrinsic features in each of the first images based on the active region. Second, identifying a portion of the intrinsic features temporally and spatially matching intrinsic features in corresponding ones of second images of the ROI associated with a second time prior to the first time and computing three-dimensional (3D) coordinates for the portion of the intrinsic features. Finally, the method includes computing a relative pose for the first images based on the 3D coordinates.

  20. A biological semiconductor based on electrical percolation

    PubMed Central

    Yang, Minghui; Bruck, Hugh Alan; Kostov, Yordan; Rasooly, Avraham

    2010-01-01

    We have developed a novel biological semiconductor (BSC) based on electrical percolation through a multi-layer 3-D carbon nanotube-antibody network, which can measure biological interactions directly and electronically. In Electrical Percolation, the passage of current through the conductive network is dependent upon the continuity of the network. Molecular interactions, such as binding of antigens to the antibodies, disrupt the network continuity causing increased resistance of the network. A BSC is fabricated by immobilizing a pre-functionalized single-walled carbon nanotubes (SWNTs)-antibody complex directly on a Poly(methyl methacrylate) (PMMA) surface (also known as plexi-glass or Acrylic). We used the BSC for direct (label-free) electronic measurements of antibody-antigen binding, showing that, at slightly above the electrical percolation threshold of the network, binding of a specific antigen dramatically increases the electrical resistance. Using anti-Staphylococcal enterotoxin B (SEB) IgG as a “gate” and SEB as an “actuator”, we demonstrated that the BSC was able to detect SEB at concentrations of 1 ng/ml. The new BSCs may permit assembly of multiple sensors on the same chip to create “Biological Central Processing Units (CPUs)” with multiple biological elements, capable of processing and sorting out information on multiple analytes simultaneously. PMID:20361741

  1. Biological semiconductor based on electrical percolation.

    PubMed

    Yang, Minghui; Bruck, Hugh Alan; Kostov, Yordan; Rasooly, Avraham

    2010-05-01

    We have developed a novel biological semiconductor (BSC) based on electrical percolation through a multilayer three-dimensional carbon nanotube-antibody bionanocomposite network, which can measure biological interactions directly and electronically. In electrical percolation, the passage of current through the conductive network is dependent upon the continuity of the network. Molecular interactions, such as binding of antigens to the antibodies, disrupt the network continuity causing increased resistance of the network. A BSC is fabricated by immobilizing a prefunctionalized single-walled carbon nanotubes (SWNTs)-antibody bionanocomposite directly on a poly(methyl methacrylate) (PMMA) surface (also known as plexiglass or acrylic). We used the BSC for direct (label-free) electronic measurements of antibody-antigen binding, showing that, at slightly above the electrical percolation threshold of the network, binding of a specific antigen dramatically increases the electrical resistance. Using anti-staphylococcal enterotoxin B (SEB) IgG as a "gate" and SEB as an "actuator", we demonstrated that the BSC was able to detect SEB at concentrations of 1 ng/mL. The new BSCs may permit assembly of multiple sensors on the same chip to create "biological central processing units (CPUs)" with multiple BSC elements, capable of processing and sorting out information on multiple analytes simultaneously.

  2. Teacher and Student Intrinsic Motivation in Project-Based Learning

    ERIC Educational Resources Information Center

    Lam, Shui-fong; Cheng, Rebecca Wing-yi; Ma, William Y. K.

    2009-01-01

    In this study we examined the relationship between teacher and student intrinsic motivation in project-based learning. The participants were 126 Hong Kong secondary school teachers and their 631 students who completed evaluation questionnaires after a semester-long project-based learning program. Both teachers and students were asked to indicate…

  3. Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

    PubMed Central

    Irokawa, Yoshihiro

    2011-01-01

    In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C–V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C–V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C–V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I–V) characterization, suggesting that low-frequency C–V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

  4. Identification of intrinsic deep level defects responsible for electret behavior in TlGaSe2 layered semiconductor

    NASA Astrophysics Data System (ADS)

    Seyidov, MirHasan Yu.; Mikailzade, Faik A.; Uzun, Talip; Odrinsky, Andrei P.; Yakar, Emin; Aliyeva, Vafa B.; Babayev, Sardar S.; Mammadov, Tofig G.

    2016-02-01

    Unusual behavior of pyroelectric current signal polarity near the Curie point (Tc) was observed for TlGaSe2 a ferroelectric-semiconductor. It has been revealed that the polarity of the spontaneous polarization near Tc depends on the sample poling prehistory. In particular, applying an external electric field only in the temperature range of the paraelectric state during cooling regime in darkness brought to the depolarization current at Tc with the sign opposite to the external field polarity. Otherwise, if the sample was poled in the temperature interval of the incommensurate phase, pyroelectric current exhibits a peak at Tc with the polarity that is the same as for the external poling electric field. These observations indicate that internal electric field is present in the bulk and near-surface layer regions of the electrically poled single crystal TlGaSe2. Possible mechanisms and origins responsible for the internal electric fields in TlGaSe2 are discussed. It is shown that the formation of internal electric fields in TlGaSe2 is due to charging of intrinsic native defects during the poling process. Characteristics of electrically active intrinsic defects in TlGaSe2 were investigated by using of Photo-Induced Current Transient Spectroscopy (PICTS) technique. Six deep defect levels in the band gap of TlGaSe2 were determined, which were localized both in the bulk and on the surface of the sample and could be electrically charged. The correlation between polarization effects and PICTS results has been established. It was shown that native deep defects (A3-A6) localized in the bulk of crystal are responsible for hetero-charge formation and negative sign of the pyroelectric current peak observed around the Curie temperature after poling the sample in the temperature intervals well above Tc. It was also shown that the positive sign pyrocurrent observed near the Curie point is attributed to the homo-charge formed by native A2-trapping centers which are localized near

  5. Semiconductor nanostructure-based photovoltaic solar cells

    NASA Astrophysics Data System (ADS)

    Zhang, Genqiang; Finefrock, Scott; Liang, Daxin; Yadav, Gautam G.; Yang, Haoran; Fang, Haiyu; Wu, Yue

    2011-06-01

    Substantial efforts have been devoted to design, synthesize, and integrate various semiconductor nanostructures for photovoltaic (PV) solar cells. In this article, we will review the recent progress in this exciting area and cover the material chemistry and physics related to all-inorganic nanostructure solar cells, hybrid inorganic nanostructure-conductive polymer composite solar cells, and dye-sensitized solar cells.

  6. Semiconductor nanostructure-based photovoltaic solar cells.

    PubMed

    Zhang, Genqiang; Finefrock, Scott; Liang, Daxin; Yadav, Gautam G; Yang, Haoran; Fang, Haiyu; Wu, Yue

    2011-06-01

    Substantial efforts have been devoted to design, synthesize, and integrate various semiconductor nanostructures for photovoltaic (PV) solar cells. In this article, we will review the recent progress in this exciting area and cover the material chemistry and physics related to all-inorganic nanostructure solar cells, hybrid inorganic nanostructure-conductive polymer composite solar cells, and dye-sensitized solar cells.

  7. Toward intrinsically stretchable organic semiconductors: mechanical properties of high-performance conjugated polymers

    NASA Astrophysics Data System (ADS)

    Sawyer, Eric J.; Savagatrup, Suchol; O'Connor, Timothy F.; Makaram, Aditya S.; Burke, Daniel J.; Zaretski, Aliaksandr V.; Printz, Adam D.; Lipomi, Darren J.

    2014-10-01

    This paper describes several approaches to understanding and improving the response of π-conjugated (semiconducting) polymers to tensile strain. Our principal goal was to establish the design criteria for introducing elasticity and ductility in conjugated (semiconducting) polymers through a rigorous analysis of the structural determinants of the mechanical properties of this type of material. We elucidated the details of the effect of the alkyl side chain length on the mechanical properties of regioregular polythiophene and used this analysis to select materials for stretching and transfer printing of organic solar cells to hemispherical substrates. This demonstration represents the first time that a conjugated polymer device has ever been stretched and conformally bonded to a complex 3D surface (i.e., other than a cone or cylinder, for which flexibility—as opposed to stretchability—is sufficient). We then further explored the details of the dependence of the mechanical properties on the side chain of a semiconducting polymer by synthesizing a series of hybrid materials (block and random copolymers) containing both short and long side chains. This analysis revealed the unusual semiconducting polymer, poly(3-heptylthiophene), as having an excellent combination of mechanical and electronic properties. In parallel, we explored a new method of producing "blocky" copolymers using a new procedure based on random segmentation of conjugated monomers. We found that introduction of structural randomness increased the elasticity without having detrimental effects on the photovoltaic performance. We also describe methods of synthesizing large volumes of conjugated polymers in environmentally benign ways that were amenable to manufacturing.

  8. All-semiconductor metamaterial-based optical circuit board at the microscale

    SciTech Connect

    Min, Li; Huang, Lirong

    2015-07-07

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  9. All-semiconductor metamaterial-based optical circuit board at the microscale

    NASA Astrophysics Data System (ADS)

    Min, Li; Huang, Lirong

    2015-07-01

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  10. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

    NASA Astrophysics Data System (ADS)

    Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2014-10-01

    We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations including the self-consistent solution of the electrostatic and transport equations within the Non-Equilibrium Green's Function formalism. We show that the lateral heterostructure transistor has the potential to outperform CMOS technology and to meet the requirements of the International Technology Roadmap for Semiconductors for the next generation of semiconductor integrated circuits. On the other hand, we find that vertical heterostructure transistors miss these performance targets by several orders of magnitude, both in terms of switching frequency and delay time, due to large intrinsic capacitances, and unavoidable current/capacitance tradeoffs.

  11. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

    PubMed Central

    Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2014-01-01

    We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations including the self-consistent solution of the electrostatic and transport equations within the Non-Equilibrium Green's Function formalism. We show that the lateral heterostructure transistor has the potential to outperform CMOS technology and to meet the requirements of the International Technology Roadmap for Semiconductors for the next generation of semiconductor integrated circuits. On the other hand, we find that vertical heterostructure transistors miss these performance targets by several orders of magnitude, both in terms of switching frequency and delay time, due to large intrinsic capacitances, and unavoidable current/capacitance tradeoffs. PMID:25328156

  12. Topology-based modeling of intrinsically disordered proteins: balancing intrinsic folding and intermolecular interactions.

    PubMed

    Ganguly, Debabani; Chen, Jianhan

    2011-04-01

    Coupled binding and folding is frequently involved in specific recognition of so-called intrinsically disordered proteins (IDPs), a newly recognized class of proteins that rely on a lack of stable tertiary fold for function. Here, we exploit topology-based Gō-like modeling as an effective tool for the mechanism of IDP recognition within the theoretical framework of minimally frustrated energy landscape. Importantly, substantial differences exist between IDPs and globular proteins in both amino acid sequence and binding interface characteristics. We demonstrate that established Gō-like models designed for folded proteins tend to over-estimate the level of residual structures in unbound IDPs, whereas under-estimating the strength of intermolecular interactions. Such systematic biases have important consequences in the predicted mechanism of interaction. A strategy is proposed to recalibrate topology-derived models to balance intrinsic folding propensities and intermolecular interactions, based on experimental knowledge of the overall residual structure level and binding affinity. Applied to pKID/KIX, the calibrated Gō-like model predicts a dominant multistep sequential pathway for binding-induced folding of pKID that is initiated by KIX binding via the C-terminus in disordered conformations, followed by binding and folding of the rest of C-terminal helix and finally the N-terminal helix. This novel mechanism is consistent with key observations derived from a recent NMR titration and relaxation dispersion study and provides a molecular-level interpretation of kinetic rates derived from dispersion curve analysis. These case studies provide important insight into the applicability and potential pitfalls of topology-based modeling for studying IDP folding and interaction in general. Copyright © 2011 Wiley-Liss, Inc.

  13. Doped semiconductor nanocrystal based fluorescent cellular imaging probes.

    PubMed

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, S K; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R

    2013-06-21

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.

  14. Doped semiconductor nanocrystal based fluorescent cellular imaging probes

    NASA Astrophysics Data System (ADS)

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, Sk; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R.

    2013-05-01

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity. Electronic supplementary information available: Characterization details of coating and

  15. Electronic and optical properties of semiconductors: A study based on the empirical tight binding model

    SciTech Connect

    Lew, Yan Voon, L.C.

    1993-01-01

    This study is a theoretical investigation of the electronic and optical properties of intrinsic semiconductors using the orthogonal empirical tight binding model. An analysis of the bulk properties of semiconductors with the zincblende, diamond and rocksalt structures has been carried out. The author has extended the work of others to higher order in the interaction integrals and derived new parameter sets for certain semiconductors which better fit the experimental data over the Brillouin zone. The Hamiltonian of the heterostructures is built up layer by layer from the parameters of the bulk constituents. The second part of this work examines a number of applications of the theory. A new microscopic derivation of the intervalley deformation potentials is presented within the tight binding representation and computes a number of conduction-band deformation potentials of bulk semiconductors. The author has also studied the electronic states in heterostructures and have shown theoretically the possibility of having barrier localization of above-barrier states in a multivalley heterostructure using a multiband calculation. Another result is the proposal for a new [open quotes]type-II[close quotes] lasing mechanism in short-period GaAs/AlAs super-lattices. As for the author's work on the optical properties, a new formalism, based on the generalized Feynman-Hellmann theorem, for computing interband optical matrix elements has been obtained and has been used to compute the linear and second-order nonlinear optical properties of a number of bulk semiconductors and semiconductor heterostructures. In agreement with the one-band effective-mass calculations of other groups, the more elaborate calculations show that the intersubband oscillator strengths of quantum wells can be greatly enhanced over the bulk interband values.

  16. Ag-based semiconductor photocatalysts in environmental purification

    NASA Astrophysics Data System (ADS)

    Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; zhu, Lihua; Xie, Yu

    2015-12-01

    Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO2, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag-based semiconductor could produce high efficient composite photocatalyts.

  17. Multifractal analysis based on amplitude extrema of intrinsic mode functions

    NASA Astrophysics Data System (ADS)

    Welter, Guilherme S.; Esquef, Paulo A. A.

    2013-03-01

    In this study, a multifractal formalism based on the empirical mode decomposition is proposed. Scaling exponents are estimated from statistical moments computed over a discrete set of multiresolution parameters, namely, the dominant amplitude coefficients, which are selected among the local maxima observed across the set of envelopes of the intrinsic mode functions. Analyses of synthetic fractal and multifractal processes demonstrate that the proposed technique is capable of overcoming the negative moment divergence problem, and is competitive with other multifractal formalisms.

  18. Triptycene-based Organic Molecules of Intrinsic Microporosity.

    PubMed

    Taylor, Rupert G D; Carta, Mariolino; Bezzu, C Grazia; Walker, Jonathan; Msayib, Kadhum J; Kariuki, Benson M; McKeown, Neil B

    2014-04-04

    Four Organic Molecules of Intrinsic Microporosity (OMIMs) were prepared by fusing triptycene-based components to a biphenyl core. Due to their rigid molecular structures that cannot pack space efficiently, these OMIMs form amorphous materials with significant microporosity as demonstrated by apparent BET surface areas in the range of 515-702 m(2) g(-1). Bulky cyclic 1',2',3',4'-tetrahydro-1',1',4',4'-tetramethylbenzo units placed on the triptycene termini are especially efficient at enhancing microporosity.

  19. Thiazole-based organic semiconductors for organic electronics.

    PubMed

    Lin, Yuze; Fan, Haijun; Li, Yongfang; Zhan, Xiaowei

    2012-06-19

    Over the past two decades, organic semiconductors have been the subject of intensive academic and commercial interests. Thiazole is a common electron-accepting heterocycle due to electron-withdrawing nitrogen of imine (C=N), several moieties based on thiazole have been widely introduced into organic semiconductors, and yielded high performance in organic electronic devices. This article reviews recent developments in the area of thiazole-based organic semiconductors, particularly thiazole, bithiazole, thiazolothiazole and benzobisthiazole-based small molecules and polymers, for applications in organic field-effect transistors, solar cells and light-emitting diodes. The remaining problems and challenges, and the key research direction in near future are discussed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Semiconductor-based DNA sequencing of histone modification states.

    PubMed

    Cheng, Christine S; Rai, Kunal; Garber, Manuel; Hollinger, Andrew; Robbins, Dana; Anderson, Scott; Macbeth, Alyssa; Tzou, Austin; Carneiro, Mauricio O; Raychowdhury, Raktima; Russ, Carsten; Hacohen, Nir; Gershenwald, Jeffrey E; Lennon, Niall; Nusbaum, Chad; Chin, Lynda; Regev, Aviv; Amit, Ido

    2013-01-01

    The recent development of a semiconductor-based, non-optical DNA sequencing technology promises scalable, low-cost and rapid sequence data production. The technology has previously been applied mainly to genomic sequencing and targeted re-sequencing. Here we demonstrate the utility of Ion Torrent semiconductor-based sequencing for sensitive, efficient and rapid chromatin immunoprecipitation followed by sequencing (ChIP-seq) through the application of sample preparation methods that are optimized for ChIP-seq on the Ion Torrent platform. We leverage this method for epigenetic profiling of tumour tissues.

  1. Future of Semiconductor Based Thermal Neutron Detectors

    SciTech Connect

    Nikolic, R J; Cheung, C L; Reinhardt, C E; Wang, T F

    2006-02-22

    Thermal neutron detectors have seen only incremental improvements over the last decades. In this paper we overview the current technology of choice for thermal neutron detection--{sup 3}He tubes, which suffer from, moderate to poor fieldability, and low absolute efficiency. The need for improved neutron detection is evident due to this technology gap and the fact that neutrons are a highly specific indicator of fissile material. Recognizing this need, we propose to exploit recent advances in microfabrication technology for building the next generation of semiconductor thermal neutron detectors for national security requirements, for applications requiring excellent fieldability of small devices. We have developed an innovative pathway taking advantage of advanced processing and fabrication technology to produce the proposed device. The crucial advantage of our Pillar Detector is that it can simultaneously meet the requirements of high efficiency and fieldability in the optimized configuration, the detector efficiency could be higher than 70%.

  2. Incremental learning of skill collections based on intrinsic motivation

    PubMed Central

    Metzen, Jan H.; Kirchner, Frank

    2013-01-01

    Life-long learning of reusable, versatile skills is a key prerequisite for embodied agents that act in a complex, dynamic environment and are faced with different tasks over their lifetime. We address the question of how an agent can learn useful skills efficiently during a developmental period, i.e., when no task is imposed on him and no external reward signal is provided. Learning of skills in a developmental period needs to be incremental and self-motivated. We propose a new incremental, task-independent skill discovery approach that is suited for continuous domains. Furthermore, the agent learns specific skills based on intrinsic motivation mechanisms that determine on which skills learning is focused at a given point in time. We evaluate the approach in a reinforcement learning setup in two continuous domains with complex dynamics. We show that an intrinsically motivated, skill learning agent outperforms an agent which learns task solutions from scratch. Furthermore, we compare different intrinsic motivation mechanisms and how efficiently they make use of the agent's developmental period. PMID:23898265

  3. Incremental learning of skill collections based on intrinsic motivation.

    PubMed

    Metzen, Jan H; Kirchner, Frank

    2013-01-01

    Life-long learning of reusable, versatile skills is a key prerequisite for embodied agents that act in a complex, dynamic environment and are faced with different tasks over their lifetime. We address the question of how an agent can learn useful skills efficiently during a developmental period, i.e., when no task is imposed on him and no external reward signal is provided. Learning of skills in a developmental period needs to be incremental and self-motivated. We propose a new incremental, task-independent skill discovery approach that is suited for continuous domains. Furthermore, the agent learns specific skills based on intrinsic motivation mechanisms that determine on which skills learning is focused at a given point in time. We evaluate the approach in a reinforcement learning setup in two continuous domains with complex dynamics. We show that an intrinsically motivated, skill learning agent outperforms an agent which learns task solutions from scratch. Furthermore, we compare different intrinsic motivation mechanisms and how efficiently they make use of the agent's developmental period.

  4. Anisotropy-based crystalline oxide-on-semiconductor material

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

  5. Ring resonator based narrow-linewidth semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Ksendzov, Alexander (Inventor)

    2005-01-01

    The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

  6. Tantalum-based semiconductors for solar water splitting.

    PubMed

    Zhang, Peng; Zhang, Jijie; Gong, Jinlong

    2014-07-07

    Solar energy utilization is one of the most promising solutions for the energy crises. Among all the possible means to make use of solar energy, solar water splitting is remarkable since it can accomplish the conversion of solar energy into chemical energy. The produced hydrogen is clean and sustainable which could be used in various areas. For the past decades, numerous efforts have been put into this research area with many important achievements. Improving the overall efficiency and stability of semiconductor photocatalysts are the research focuses for the solar water splitting. Tantalum-based semiconductors, including tantalum oxide, tantalate and tantalum (oxy)nitride, are among the most important photocatalysts. Tantalum oxide has the band gap energy that is suitable for the overall solar water splitting. The more negative conduction band minimum of tantalum oxide provides photogenerated electrons with higher potential for the hydrogen generation reaction. Tantalates, with tunable compositions, show high activities owning to their layered perovskite structure. (Oxy)nitrides, especially TaON and Ta3N5, have small band gaps to respond to visible-light, whereas they can still realize overall solar water splitting with the proper positions of conduction band minimum and valence band maximum. This review describes recent progress regarding the improvement of photocatalytic activities of tantalum-based semiconductors. Basic concepts and principles of solar water splitting will be discussed in the introduction section, followed by the three main categories regarding to the different types of tantalum-based semiconductors. In each category, synthetic methodologies, influencing factors on the photocatalytic activities, strategies to enhance the efficiencies of photocatalysts and morphology control of tantalum-based materials will be discussed in detail. Future directions to further explore the research area of tantalum-based semiconductors for solar water splitting

  7. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  8. Nanophotonics Based on Semiconductor-Photonic Crystal/Quantum Dot and Metal-/Semiconductor-Plasmonics

    NASA Astrophysics Data System (ADS)

    Asakawa, Kiyoshi; Sugimoto, Yoshimasa; Ikeda, Naoki; Tsuya, Daiju; Koide, Yasuo; Watanabe, Yoshinori; Ozaki, Nobuhiko; Ohkouchi, Shunsuke; Nomura, Tsuyoshi; Inoue, Daisuke; Matsui, Takayuki; Miura, Atsushi; Fujikawa, Hisayoshi; Sato, Kazuo

    This paper reviews our recent activities on nanophotonics based on a photonic crystal (PC)/quantum dot (QD)-combined structure for an all-optical device and a metal/semiconductor composite structure using surface plasmon (SP) and negative refractive index material (NIM). The former structure contributes to an ultrafast signal processing component by virtue of new PC design and QD selective-area-growth technologies, while the latter provides a new RGB color filter with a high precision and optical beam-steering device with a wide steering angle.

  9. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

    PubMed

    Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2015-01-14

    The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

  10. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-07

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.

  11. Changing the Environment Based on Empowerment as Intrinsic Motivation

    NASA Astrophysics Data System (ADS)

    Salge, Christoph; Glackin, Cornelius; Polani, Daniel

    2014-05-01

    One aspect of intelligence is the ability to restructure your own environment so that the world you live in becomes more beneficial to you. In this paper we investigate how the information-theoretic measure of agent empowerment can provide a task-independent, intrinsic motivation to restructure the world. We show how changes in embodiment and in the environment change the resulting behaviour of the agent and the artefacts left in the world. For this purpose, we introduce an approximation of the established empowerment formalism based on sparse sampling, which is simpler and significantly faster to compute for deterministic dynamics. Sparse sampling also introduces a degree of randomness into the decision making process, which turns out to beneficial for some cases. We then utilize the measure to generate agent behaviour for different agent embodiments in a Minecraft-inspired three dimensional block world. The paradigmatic results demonstrate that empowerment can be used as a suitable generic intrinsic motivation to not only generate actions in given static environments, as shown in the past, but also to modify existing environmental conditions. In doing so, the emerging strategies to modify an agent's environment turn out to be meaningful to the specific agent capabilities, i.e., de facto to its embodiment.

  12. Method of plasma etching Ga-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  13. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    SciTech Connect

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  14. Method of plasma etching GA-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  15. Semiconductor Nanocrystals-Based White Light Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Hu, Michael Z.; Duty, Chad E

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

  16. Semiconductor-Nanocrystals-Based White Light-Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z.

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

  17. Novel optoelectronic devices based on single semiconductor nanowires (nanobelts).

    PubMed

    Ye, Yu; Dai, Lun; Gan, Lin; Meng, Hu; Dai, Yu; Guo, Xuefeng; Qin, Guogang

    2012-04-13

    Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal-semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors, the MESFET-based photodetector can make a balance among overall performance parameters, which is desired for practical device applications. We also present our recent work on graphene nanoribbon/semiconductor NW (SNW) heterojunction light-emitting diodes (LEDs). Herein, by taking advantage of both graphene and SNWs, we have fabricated, for the first time, the graphene-based nano-LEDs. This achievement opens a new avenue for developing graphene-based nano-electroluminescence devices. Moreover, the novel graphene/SNW hybrid devices can also find use in other applications, such as high-sensitivity sensor and transparent flexible devices in the future.

  18. Optically induced transport through semiconductor-based molecular electronics

    SciTech Connect

    Li, Guangqi; Seideman, Tamar; Fainberg, Boris D.

    2015-04-21

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  19. Optically induced transport through semiconductor-based molecular electronics

    NASA Astrophysics Data System (ADS)

    Li, Guangqi; Fainberg, Boris D.; Seideman, Tamar

    2015-04-01

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  20. Spin-Seebeck Effect in III-V Based Semiconductors

    NASA Astrophysics Data System (ADS)

    Jaworski, Christopher M.; Myers, Roberto C.; Heremans, Joseph P.

    2012-02-01

    The spin-Seebeck effect has now been observed in metals^1 (NiFe), semiconductors^2 (GaMnAs), and insulators^3 (YIG). It consists of a thermally generated spin distribution that is phonon driven. Here we extend our measurements of the spin-Seebeck effect to other group III-V based magnetic semiconductors and present measurements of conventional thermomagnetic and galvanomagnetic properties as well as the spin-Seebeck effect. Work supported by the National Science Foundation, NSF-CBET-1133589 1. K. Uchida, et al., Nature 455 778 (2008) 2. C.M. Jaworski et al., Nature Materials 8 898 (2010), Phys. Rev. Lett. 106 186601 (2011) 3. K. Uchida, et al., Nature Materials 8 893 (2010)

  1. Content-Based Image Retrieval for Semiconductor Process Characterization

    NASA Astrophysics Data System (ADS)

    Tobin, Kenneth W.; Karnowski, Thomas P.; Arrowood, Lloyd F.; Ferrell, Regina K.; Goddard, James S.; Lakhani, Fred

    2002-12-01

    Image data management in the semiconductor manufacturing environment is becoming more problematic as the size of silicon wafers continues to increase, while the dimension of critical features continues to shrink. Fabricators rely on a growing host of image-generating inspection tools to monitor complex device manufacturing processes. These inspection tools include optical and laser scattering microscopy, confocal microscopy, scanning electron microscopy, and atomic force microscopy. The number of images that are being generated are on the order of 20,000 to 30,000 each week in some fabrication facilities today. Manufacturers currently maintain on the order of 500,000 images in their data management systems for extended periods of time. Gleaning the historical value from these large image repositories for yield improvement is difficult to accomplish using the standard database methods currently associated with these data sets (e.g., performing queries based on time and date, lot numbers, wafer identification numbers, etc.). Researchers at the Oak Ridge National Laboratory have developed and tested a content-based image retrieval technology that is specific to manufacturing environments. In this paper, we describe the feature representation of semiconductor defect images along with methods of indexing and retrieval, and results from initial field-testing in the semiconductor manufacturing environment.

  2. Progress in ion torrent semiconductor chip based sequencing.

    PubMed

    Merriman, Barry; Rothberg, Jonathan M

    2012-12-01

    In order for next-generation sequencing to become widely used as a diagnostic in the healthcare industry, sequencing instrumentation will need to be mass produced with a high degree of quality and economy. One way to achieve this is to recast DNA sequencing in a format that fully leverages the manufacturing base created for computer chips, complementary metal-oxide semiconductor chip fabrication, which is the current pinnacle of large scale, high quality, low-cost manufacturing of high technology. To achieve this, ideally the entire sensory apparatus of the sequencer would be embodied in a standard semiconductor chip, manufactured in the same fab facilities used for logic and memory chips. Recently, such a sequencing chip, and the associated sequencing platform, has been developed and commercialized by Ion Torrent, a division of Life Technologies, Inc. Here we provide an overview of this semiconductor chip based sequencing technology, and summarize the progress made since its commercial introduction. We described in detail the progress in chip scaling, sequencing throughput, read length, and accuracy. We also summarize the enhancements in the associated platform, including sample preparation, data processing, and engagement of the broader development community through open source and crowdsourcing initiatives. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Intrinsic spin and momentum relaxation in organic single-crystalline semiconductors probed by ESR and Hall measurements

    NASA Astrophysics Data System (ADS)

    Tsurumi, Junto; Häusermann, Roger; Watanabe, Shun; Mitsui, Chikahiko; Okamoto, Toshihiro; Matsui, Hiroyuki; Takeya, Jun

    Spin and charge momentum relaxation mechanism has been argued among organic semiconductors with various methods, devices, and materials. However, little is known in organic single-crystalline semiconductors because it has been hard to obtain an ideal organic crystal with an excellent crystallinity and controllability required for accurate measurements. By using more than 1-inch sized single crystals which are fabricated via contentious edge-casting method developed by our group, we have successfully demonstrated a simultaneous determination of spin and momentum relaxation time for gate-induced charges of 3,11-didecyldinaphtho[2,3- d:2',3'- d']benzo[1,2- b:4,5- b']dithiophene, by combining electron spin resonance (ESR) and Hall effect measurements. The obtained temperature dependences of spin and momentum relaxation times are in good agreement in terms of power law with a factor of approximately -2. It is concluded that Elliott-Yafet spin relaxation mechanism can be dominant at room temperature regime (200 - 300 K). Probing characteristic time scales such as spin-lattice, spin-spin, and momentum relaxation times, demonstrated in the present work, would be a powerful tool to elucidate fundamental spin and charge transport mechanisms. We acknowledge the New Energy and Industrial Technology Developing Organization (NEDO) for financial support.

  4. Ionic behavior of organic-inorganic metal halide perovskite based metal-oxide-semiconductor capacitors.

    PubMed

    Wang, Yucheng; Zhang, Yuming; Pang, Tiqiang; Xu, Jie; Hu, Ziyang; Zhu, Yuejin; Tang, Xiaoyan; Luan, Suzhen; Jia, Renxu

    2017-05-24

    Organic-inorganic metal halide perovskites are promising semiconductors for optoelectronic applications. Despite the achievements in device performance, the electrical properties of perovskites have stagnated. Ion migration is speculated to be the main contributing factor for the many unusual electrical phenomena in perovskite-based devices. Here, to understand the intrinsic electrical behavior of perovskites, we constructed metal-oxide-semiconductor (MOS) capacitors based on perovskite films and performed capacitance-voltage (C-V) and current-voltage (I-V) measurements of the capacitors. The results provide direct evidence for the mixed ionic-electronic transport behavior within perovskite films. In the dark, there is electrical hysteresis in both the C-V and I-V curves because the mobile negative ions take part in charge transport despite frequency modulation. However, under illumination, the large amount of photoexcited free carriers screens the influence of the mobile ions with a low concentration, which is responsible for the normal C-V properties. Validation of ion migration for the gate-control ability of MOS capacitors is also helpful for the investigation of perovskite MOS transistors and other gate-control photovoltaic devices.

  5. A role for graphene in silicon-based semiconductor devices.

    PubMed

    Kim, Kinam; Choi, Jae-Young; Kim, Taek; Cho, Seong-Ho; Chung, Hyun-Jong

    2011-11-16

    As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators. © 2011 Macmillan Publishers Limited. All rights reserved

  6. Metal-optic and Plasmonic Semiconductor-based Nanolasers

    NASA Astrophysics Data System (ADS)

    Lakhani, Amit Manmohan

    Over the past few decades, semiconductor lasers have relentlessly followed the path towards miniaturization. Smaller lasers are more energy efficient, are cheaper to make, and open up new applications in sensing and displays, among many other things. Yet, up until recently, there was a fundamental problem with making lasers smaller: purely semiconductor lasers couldn't be made smaller than the diffraction limit of light. In recent years, however, metal-based lasers have been demonstrated in the nanoscale that have shattered the diffraction limit. As optical materials, metals can be used to either reflect light (metal-optics) or convert light to electrical currents (plasmonics). In both cases, metals have provided ways to squeeze light beyond the diffraction limit. In this dissertation, I experimentally demonstrated one nanolaser based on plasmonic transduction and another laser based on metal-optic reflection. To create coherent plasmons, I designed a nanolaser based on a plasmonic bandgap defect state inside a surface plasmonic crystal. In a one-dimensional periodic semiconductor beam, I was able to confine surface plasmons by interrupting the periodicity of the crystal. These confined surface plasmons then underwent laser oscillations in effective mode volumes as small as 0.007 cubic wavelengths. At this electromagnetic volume, energy was squeezed 10 times smaller than those possible in similar photonic crystals that do not utilize metal. This demonstration should pave the way for achieving engineered nanolasers with deep-subwavelength mode volumes and enable plasmonic crystals to become attractive platforms for designing plasmons. After achieving large reductions in electromagnetic mode volumes, I switched to a metal-optics-based nanolaser design to further reduce the physical volumes of small light sources. The semiconductor nanopatch laser achieved laser oscillations with subwavelength-scale physical dimensions (0.019 cubic wavelengths) and effective mode

  7. Antimonide-Based Compound Semiconductors for Low-Power Electronics

    DTIC Science & Technology

    2013-01-01

    bipolar transistors [3], heterostructure barrier varactors for use as frequency multipliers [4], and p-n diodes for THz mixer applications [5...In0.69Al0.31As0.41Sb0.59/In0.27Ga0.73Sb double-heterojunction bipolar transistors with InAs0.66Sb0.34 contact layers. Electron Lett. 2010;46: 1333-5. [4] Champlain JG...Quantum wells formed from antimonide-based compound semiconductors are exploited in n-channel field-effect transistors (FETs) operating at high speeds

  8. Refractive index sensing based on semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Wu, Xiaoqin; Chen, Qiushu; Xu, Peizhen; Tong, Limin; Fan, Xudong

    2017-07-01

    We demonstrate a refractive index (RI) sensor based on semiconductor nanowire lasers. It is shown that the TE01 mode is responsible for lasing and sensing with the lasing threshold of 3 μJ/mm2 and the lasing peak width as narrow as 0.22 nm. A RI sensitivity of 21.2 nm/RIU (refractive index units), a figure of merit of approximately 100, and an RI detection limit of 1.4 ×10-3 RIU are achieved.

  9. Trace explosive sensor devices based on semiconductor nanomaterials

    NASA Astrophysics Data System (ADS)

    Wang, Danling

    This dissertation discusses an explosive sensing device based on semiconductor nanomaterials. Here, we mainly focus on two kinds of materials: titanium dioxide nanowires and silicon nanowires to detect explosive trace vapor. Herein, methods for the synthesis, fabrication, design of nanostructured sensing materials using low-cost hydrothermal process are present. In addition, the nanomaterials have been systemically tested on different explosive. The first part of dissertation is focused on the fabrication of TiO2(B) dominant nanowires and testing the response to explosives. It was found that the high porous TiO2(B) nanowires when mixed anatase TiO2, exhibit a very fast and highly sensitive response to nitro-containing explosives. The second part of dissertation has studied the basic sensing mechanism of TiO2(B) nanowire sensor to detect explosives. It shows the specific surface characteristics of TiO2 responsible for the nitro-containing explosives. This information is then used to propose a method using UV illumination to reduce the effect of water vapor on TiO2(B) nanowires. The third part discussed an explosive sensor based on silicon nanowires. We analyzed the mechanism of silicon nanowires to detect nitro-related explosive compounds. In order to further investigate the sensing mechanism of TiO2, the fourth part of dissertation studies the effect on sensor performance by using different crystal phases of TiO2, different microstructure of TiO2, surface modification of TiO2, and different kinds of nanostructured semiconductors such as ZnO nanowires, TiO2 coated ZnO nanowires, V2O5 nanowires, and CdS nanowires to detect explosives. It is found that only TiO2 related semiconductor shows good response to explosives.

  10. Unusual electronic transport and magnetism in titanium oxide based semiconductors and metals

    NASA Astrophysics Data System (ADS)

    Zhang, Shixiong

    The main objective of this thesis was to explore the structural, electrical, magnetic and optical properties of titanium based novel oxide thin films, such as transparent conducting oxides (TCOs) and diluted magnetic semiconductors (DMSs), so as to be able to realize optoelectronics and spintronics applications. I demonstrated that niobium doped titanium dioxide (TiO2) in its epitaxial anatase phase grown at certain condition is an intrinsic transparent conducting oxide, with both its conductivity and transparency comparable to that of the commercial transparent electrode In-Sn-O being widely used in current optoelectronic devices. I investigated the growth parameter dependence of structure and conductivity of this material. It was found that the growth temperature is a crucial parameter for the structural quality as well as the electron mobility, while the oxygen partial pressure is essential for the conduction electron concentration. The excellent conductivity of niobium doped TiO2 should be attributed to the extremely high solubility of niobium in the TiO2 matrix as well as a very shallow donor level created in the TiO2 band gap. I investigated several important oxide based DMS systems, such as niobium and cobalt dual doped TiO2, transition metal (TM) element doped SrTiO3 etc. I found that niobium dual doping is an effective way to introduce carriers into the classical Co: TiO2 system, which provides the feasibility of studying the RKKY interaction in this system by chemical doping. Our detailed characterization of TM doped SrTiO3 questioned the intrinsic nature of the ferromagnetism observed by other groups. By a systematic study of Hall effect on superparamagnetic Co-(La,Sr)TiO 3 thin films, I was able to demonstrate that the magnitude of the anomalous Hall effect is a way to distinguish between intrinsic and extrinsic DMS. A Kondo effect was observed in niobium doped TiO2 grown at certain condition. The origin of magnetic moments in this system was suggested

  11. A microprocessor based on a two-dimensional semiconductor

    NASA Astrophysics Data System (ADS)

    Wachter, Stefan; Polyushkin, Dmitry K.; Bethge, Ole; Mueller, Thomas

    2017-04-01

    The advent of microcomputers in the 1970s has dramatically changed our society. Since then, microprocessors have been made almost exclusively from silicon, but the ever-increasing demand for higher integration density and speed, lower power consumption and better integrability with everyday goods has prompted the search for alternatives. Germanium and III-V compound semiconductors are being considered promising candidates for future high-performance processor generations and chips based on thin-film plastic technology or carbon nanotubes could allow for embedding electronic intelligence into arbitrary objects for the Internet-of-Things. Here, we present a 1-bit implementation of a microprocessor using a two-dimensional semiconductor--molybdenum disulfide. The device can execute user-defined programs stored in an external memory, perform logical operations and communicate with its periphery. Our 1-bit design is readily scalable to multi-bit data. The device consists of 115 transistors and constitutes the most complex circuitry so far made from a two-dimensional material.

  12. Hybrid photovoltaics based on semiconductor nanocrystals and amorphous silicon.

    PubMed

    Sun, Baoquan; Findikoglu, Alp T; Sykora, Milan; Werder, Donald J; Klimov, Victor I

    2009-03-01

    Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and, perhaps, increased conversion efficiency in the ultraviolet region through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC energy states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs. On the other hand, in devices comprising narrow-gap PbS NCs, both the NCs and silicon contribute to photocurrent, which results in PV response extending from the visible to the near-infrared region. The hybrid silicon/PbS NC solar cells show external quantum efficiencies of approximately 7% at infrared energies and 50% in the visible and a power conversion efficiency of up to 0.9%. This work demonstrates the feasibility of hybrid PV devices that combine advantages of mature silicon fabrication technologies with the unique electronic properties of semiconductor NCs.

  13. Improving low-temperature performance of infrared thin-film interference filters utilizing the intrinsic properties of IV-VI narrow-gap semiconductors.

    PubMed

    Li, Bin; Zhang, S; Jiang, J; Fan, B; Zhang, F

    2004-02-09

    Pb(1) (-x)Ge(x)Te is a pseudobinary alloy of IV-VI narrow-gap semiconductor, of which maximum refractive index corresponds to the ferroelectric phase transition. Since the temperature coefficient of refractive index can be tunable from negative to positive by changing the Ge composition, it is possible to utilize the intrinsic property in the fabrication of infrared thin-film interference filters. In this letter, we report a narrow-bandpass filter, in which Pb(0.94)Ge(0.06)Te was substituted for PbTe. It found that the low-temperature stability of the filter is obviously improved: in the temperature range of 80-300K, the shift of center wavelength with temperature is reduced from 0.48nm.K(-1) to 0.23nm K(-1); furthermore, the peak transmittance of filter fabricated with Pb(0.94)Ge(0.06)Te is ~3% over that fabricated with PbTe.

  14. Gaussian intrinsic entanglement: An entanglement quantifier based on secret correlations

    NASA Astrophysics Data System (ADS)

    Mišta, Ladislav; Tatham, Richard

    2015-06-01

    Intrinsic entanglement (IE) is a quantity which aims at quantifying bipartite entanglement carried by a quantum state as an optimal amount of the intrinsic information that can be extracted from the state by measurement. We investigate in detail the properties of a Gaussian version of IE, the so-called Gaussian intrinsic entanglement (GIE). We show explicitly how GIE simplifies to the mutual information of a distribution of outcomes of measurements on a conditional state obtained by a measurement on a purifying subsystem of the analyzed state, which is first minimized over all measurements on the purifying subsystem and then maximized over all measurements on the conditional state. By constructing for any separable Gaussian state a purification and a measurement on the purifying subsystem which projects the purification onto a product state, we prove that GIE vanishes on all Gaussian separable states. Via realization of quantum operations by teleportation, we further show that GIE is nonincreasing under Gaussian local trace-preserving operations and classical communication. For pure Gaussian states and a reduction of the continuous-variable GHZ state, we calculate GIE analytically and we show that it is always equal to the Gaussian Rényi-2 entanglement. We also extend the analysis of IE to a non-Gaussian case by deriving an analytical lower bound on IE for a particular form of the non-Gaussian continuous-variable Werner state. Our results indicate that mapping of entanglement onto intrinsic information is capable of transmitting also quantitative properties of entanglement and that this property can be used for introduction of a quantifier of Gaussian entanglement which is a compromise between computable and physically meaningful entanglement quantifiers.

  15. The Relationships among Measures of Intrinsic Motivation, Instructional Design, and Learning in Computer-Based Instruction.

    ERIC Educational Resources Information Center

    Rezabek, Randy

    The intent of this study was to explore the intrinsic aspects of motivation, and to see if the design of instruction could positively affect learners' levels of intrinsic motivation toward the subject matter. The following questions were addressed: (1) Will different computer-based instructional treatments which have been designed to reflect…

  16. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

    PubMed Central

    Gu, Haoshuang; Wang, Zhao; Hu, Yongming

    2012-01-01

    Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors. PMID:22778599

  17. Photonic crystal waveguides based on wide-gap semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Martin, Aude; Combrié, Sylvain; De Rossi, Alfredo

    2017-03-01

    This review is devoted to integrated photonic platforms based on large band-gap semiconductors, alternatives to silicon photonics. The large electronic band gap of the material employed is chosen to address the specific needs of nonlinear optics, and, in particular, lower nonlinear losses and the capability of handling larger optical power densities. Moreover, these new platforms offer broader transmission spectra, extending to the visible spectral region, which is also required for other applications, particularly sensing and bio-related photonics. The focus is on nanoscale patterned waveguiding structures, which, owing to the tight confinement of light, have demonstrated a large nonlinear response. The third-order nonlinear response and the related parametric interactions will be considered here, encompassing four-wave mixing, phase-sensitive amplification, wavelength conversion, and also nonlinear pulse propagation and soliton dynamics. The comparison between different materials and waveguide design highlights specific features of photonic crystal waveguides.

  18. Supramolecular luminescence from oligofluorenol-based supramolecular polymer semiconductors.

    PubMed

    Zhang, Guang-Wei; Wang, Long; Xie, Ling-Hai; Lin, Jin-Yi; Huang, Wei

    2013-11-13

    Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR) and dynamic light scattering (DLS). The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band) at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics.

  19. Supramolecular Luminescence from Oligofluorenol-Based Supramolecular Polymer Semiconductors

    PubMed Central

    Zhang, Guang-Wei; Wang, Long; Xie, Ling-Hai; Lin, Jin-Yi; Huang, Wei

    2013-01-01

    Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR) and dynamic light scattering (DLS). The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band) at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics. PMID:24232455

  20. Flexible non-volatile memory devices based on organic semiconductors

    NASA Astrophysics Data System (ADS)

    Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

    2015-09-01

    The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

  1. Optical properties of semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Son, Joong-Kon

    Thanks to the difference in energy gap between two semiconductors and to their different indices of refraction, semiconductor heterostructures can confine electrons as well as photons. This property makes it possible to build semiconductor-based optical resonators (microcavities) with a radiation dipole (a quantum well) in its midst to investigate the coupling between the optical modes of the microcavity with the exciton modes of the quantum well. Such an interaction, besides its intrinsic interest, is relevant to vertically-emitting semiconductor lasers, based on the quantum well- microcavity system. In this thesis, we will present experimental evidence of temperature and electric-field dependent exciton-cavity coupling in GaAs-GaAlAs microcavities.

  2. Sapphire-fiber-based intrinsic Fabry-Perot interferometer

    NASA Technical Reports Server (NTRS)

    Wang, Anbo; Gollapudi, Sridhar; Murphy, Kent A.; May, Russell G.; Claus, Richard O.

    1992-01-01

    A sapphire optical fiber intrinsic Fabry-Perot interferometric sensor is demonstrated. A length of multimode sapphire fiber that functions as a Fabry-Perot cavity is spliced to a silica single-mode fiber. The interferometric signals of this sensor are produced by the interference between the reflection from the silica-sapphire fiber splice and the reflection from the free end face of the sapphire fiber. This sensor has been demonstrated for temperature measurement. A resolution of 0.2 C has been obtained over a measurement range of 310 C to 976 C.

  3. Terahertz optoelectronic devices based on intersubband transitions in III-nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Sudradjat, Faisal Firmansyah

    The terahertz (THz) spectral region, commonly defined as the frequency (wavelength) range between 0.3 and 10 THz (1 mm and 30 µm) has many important applications in the industrial, biomedical, and military sectors. However, due to a lack of practical semiconductor materials with adequately small bandgap energy, the development of THz light sources and photodetectors has so far been limited. In recent years, devices based on intersubband transitions between discrete energy states in quantum heterostructures have been under intense research and development to address this issue. Of particular promise in the THz range are quantum cascade lasers (QCLs) and quantum well infrared photodetectors (QWIPs), which utilize intersubband transitions in specially designed quantum well (QW) structures to emit light and generate photocurrent, respectively. This research work has focused on the development of THz light sources and photodetectors using intersubband transitions in GaN/AlGaN QWs, whose basic materials properties allow for improved spectral coverage and high-temperature operation compared to existing semiconductor devices. To design the active region of QCLs and QWIPs based on inter-conduction-subband transitions in these materials, the necessary numerical tools have first been developed. Sequential tunneling, the key electronic transport mechanism of intersubband light emitters, has then been demonstrated in GaN/AlGaN QC structures. Furthermore, we have measured promising THz electroluminescence spectra from the same devices through the use of lock-in step-scan Fourier transform infrared spectroscopy. In the area of photodetectors, we have developed a novel double-step QW design in order to overcome the material limitations presented by the intrinsic internal electric fields of GaN/AlGaN QWs. With this design approach, we have experimentally demonstrated the operation of a far infrared QWIP with a peak detection wavelength of 23 µm (13 THz frequency), which is the

  4. Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

    SciTech Connect

    Agio, Mario

    2002-12-31

    This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser.

  5. Surface plasmon based engineering of semiconductor nanowire optics

    NASA Astrophysics Data System (ADS)

    Aspetti, Carlos Octavio

    Semiconductor nanowires combine the material properties of semiconductors, which are ubiquitous in modern technology, with nanoscale dimensions and as such, are firmly poised at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics, in particular, arises from the increased interaction between light and matter that occurs when light is confined to dimensions below the size of its wavelength, in other words, when the nanowire serves as a light trapping optical cavity, which itself is also a source of light. Light confinement is taken to new extremes by coupling to the surface plasmon modes of metallic nanostructures, where light acquires mixed photonic and electronic character, and which may focus light to deep-subwavelength regions amenable to the dimensions of the electron wave. This thesis examines how the integration of "plasmonic optical cavities" and semiconductor nanowires leads to substantial modification (and enhancement) of the optical properties of the same, resulting in orders-of-magnitude faster and more efficient light emission with colors that may be tuned as a function of optical cavity geometry. Furthermore, this method is applied to nanowires composed of both direct and indirect bandgap semiconductor materials resulting in applications such as light emission from high-energy states in light emitting materials, highly enhanced broadband light emission from nominally non-light emitting (dark) materials, and broadband (and anomalous) enhancement of light absorption in various materials, all the while maintaining the unifying theme of employing integrated plasmonic-semiconductor optical cavities to achieve tailored optical properties. We begin with a review of the electromagnetic properties of optical cavities, surface plasmon-enhanced light emission in semiconductors, and the key physical properties of semiconductor nanowires. It goes without saying that this thesis work resides at the interface between optical

  6. Bismuth-based oxide semiconductors: Mild synthesis and practical applications

    NASA Astrophysics Data System (ADS)

    Timmaji, Hari Krishna

    In this dissertation study, bismuth based oxide semiconductors were prepared using 'mild' synthesis techniques---electrodeposition and solution combustion synthesis. Potential environmental remediation and solar energy applications of the prepared oxides were evaluated. Bismuth vanadate (BiVO4) was prepared by electrodeposition and solution combustion synthesis. A two step electrosynthesis strategy was developed and demonstrated for the first time. In the first step, a Bi film was first electrodeposited on a Pt substrate from an acidic BiCl3 medium. Then, this film was anodically stripped in a medium containing hydrolyzed vanadium precursor, to generate Bi3+, and subsequent BiVO4 formation by in situ precipitation. The photoelectrochemical data were consistent with the in situ formation of n-type semiconductor films. In the solution combustion synthesis procedure, BiVO4 powders were prepared using bismuth nitrate pentahydrate as the bismuth precursor and either vanadium chloride or vanadium oxysulfate as the vanadium precursor. Urea, glycine, or citric acid was used as the fuel. The effect of the vanadium precursor on the photocatalytic activity of combustion synthesized BiVO 4 was evaluated in this study. Methyl orange was used as a probe to test the photocatalytic attributes of the combustion synthesized (CS) samples, and benchmarked against a commercial bismuth vanadate sample. The CS samples showed superior activity to the commercial benchmark sample, and samples derived from vanadium chloride were superior to vanadium oxysulfate counterparts. The photoelectrochemical properties of the various CS samples were also studied and these samples were shown to be useful both for environmental photocatalytic remediation and water photooxidation applications. Silver bismuth tungstate (AgBiW2O8) nanoparticles were prepared for the first time by solution combustion synthesis by using silver nitrate, bismuth nitrate, sodium tungstate as precursors for Ag, Bi, and W

  7. Electrical and Optical Characterization of Nanowire based Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Ayvazian, Talin

    This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

  8. Ratiometric fluorescence, electrochemiluminescence, and photoelectrochemical chemo/biosensing based on semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Wu, Peng; Hou, Xiandeng; Xu, Jing-Juan; Chen, Hong-Yuan

    2016-04-01

    Ratiometric fluorescent sensors, which can provide built-in self-calibration for correction of a variety of analyte-independent factors, have attracted particular attention for analytical sensing and optical imaging with the potential to provide a precise and quantitative analysis. A wide variety of ratiometric sensing probes using small fluorescent molecules have been developed. Compared with organic dyes, exploiting semiconductor quantum dots (QDs) in ratiometric fluorescence sensing is even more intriguing, owing to their unique optical and photophysical properties that offer significant advantages over organic dyes. In this review, the main photophysical mechanism for generating dual-emission from QDs for ratiometry is discussed and categorized in detail. Typically, dual-emission can be obtained either with energy transfer from QDs to dyes or with independent dual fluorophores of QDs and dye/QDs. The recent discovery of intrinsic dual-emission from Mn-doped QDs offers new opportunities for ratiometric sensing. Particularly, the signal transduction of QDs is not restricted to fluorescence, and electrochemiluminescence and photoelectrochemistry from QDs are also promising for sensing, which can be made ratiometric for correction of interferences typically encountered in electrochemistry. All these unique photophysical properties of QDs lead to a new avenue of ratiometry, and the recent progress in this area is addressed and summarized here. Several interesting applications of QD-based ratiometry are presented for the determination of metal ions, temperature, and biomolecules, with specific emphasis on the design principles and photophysical mechanisms of these probes.

  9. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    NASA Astrophysics Data System (ADS)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

    2010-06-01

    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  10. Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

    NASA Astrophysics Data System (ADS)

    Fukumura, T.; Yamada, Y.; Toyosaki, H.; Hasegawa, T.; Koinuma, H.; Kawasaki, M.

    2004-02-01

    A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS unidentified ferromagnetic oxide (UFO). Perspectives and possible devices are also given.

  11. Intrinsic fluorescence of protein in turbid media using empirical relation based on Monte Carlo lookup table

    NASA Astrophysics Data System (ADS)

    Einstein, Gnanatheepam; Udayakumar, Kanniyappan; Aruna, Prakasarao; Ganesan, Singaravelu

    2017-03-01

    Fluorescence of Protein has been widely used in diagnostic oncology for characterizing cellular metabolism. However, the intensity of fluorescence emission is affected due to the absorbers and scatterers in tissue, which may lead to error in estimating exact protein content in tissue. Extraction of intrinsic fluorescence from measured fluorescence has been achieved by different methods. Among them, Monte Carlo based method yields the highest accuracy for extracting intrinsic fluorescence. In this work, we have attempted to generate a lookup table for Monte Carlo simulation of fluorescence emission by protein. Furthermore, we fitted the generated lookup table using an empirical relation. The empirical relation between measured and intrinsic fluorescence is validated using tissue phantom experiments. The proposed relation can be used for estimating intrinsic fluorescence of protein for real-time diagnostic applications and thereby improving the clinical interpretation of fluorescence spectroscopic data.

  12. Compact self-contained blood coagulator based on semiconductor laser

    NASA Astrophysics Data System (ADS)

    Svirin, Vaytcheslav N.; Rogatkin, Dmitrii A.; Chernenko, P.

    2001-01-01

    In recent years significant improvement of power and spectral characteristics of semiconductor lasers has taken place. The power of serial single near-IR semiconductor lasers has achieved units of watts, the spectral range has been extended from 0.63 to 1.7...1.8 micrometers . The available level of semiconductor lasers, their small dimensions and weight, together with the characteristics of the modern fiberoptic systems, electronic and microprocessor components as well as small dimensions and weight of modern power supplies allow development of a compact portable self-contained blood coagulator, which is of great importance for use in various emergencies, natural calamities, and in many other areas. The report discusses the problems of designing the coagulator, its technical and user characteristics as well as the possibilities to use such a coagulator in other fields of laser medicine.

  13. Cu2O-based solar cells using oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2016-01-01

    We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0

  14. Semiconductor Gas Sensors Based on Pd/SnO2 Nanomaterials for Methane Detection in Air

    NASA Astrophysics Data System (ADS)

    Fedorenko, George; Oleksenko, Ludmila; Maksymovych, Nelly; Skolyar, Galina; Ripko, Oleksandr

    2017-05-01

    Semiconductor sensors based on nanosized Pd-containing tin dioxide have been obtained by a sol-gel technique. Semiconductor gas-sensitive materials were characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD) methods. Influence of Pd additives on sensitivity of the sensors to methane has been studied. Temperature dependences of electrical resistance in air and sensor response to methane on palladium content for the sensors based on nanosized materials Pd/SnO2 have been investigated.

  15. All optical logic operations using semiconductor optical amplifier based devices

    NASA Astrophysics Data System (ADS)

    Wang, Qiang

    High-speed optical processing technologies are essential for the construction of all-optical networks in the information era. In this Ph. D. thesis dissertation, essential mechanisms related to the semiconductor optical amplifier (SOA) based device such as the gain and phase dynamics when a short pulse in propagating inside SOA, and, all-optical Boolean function, XOR, AND and OR have been studied. In order to realize the all-optical logic using SOA, the nonlinear gain and phase dynamics in SOA need to be studied first. The experimental results of 10--90% gain recovery curve have been presented. The recovery time is related to the carrier lifetime of the SOA and it varies with gain compression and bias current. For pulse width of a few picosecond, intraband effects need to be considered. In the SOA, phase change is also induced when a short pulse is propagating inside SOA. Unlike the conventional way of estimating the phase shift using alpha factor, the maximum phase shift is obtained first, then the effective alpha factor is calculated. The experimental results of all optical Boolean function XOR and OR at 80 Gb/s are presented using SOA-MZI-DI and SOA-DI respectively. These are the highest operating speed that has been reported. The all optical AND operation at 40 Gb/s using SOA-MZI have also been reported here. The numerical simulation shows that the performance of these all-optical Boolean operations is limited by the carrier lifetime of the SOA. The Boolean functions are the first step towards all optical circuits. The designs of a parity checker and a pseudo-random binary sequence (PRBS) generator are demonstrated. The error analysis using quality factor and eye-diagram is also presented.

  16. Microsensors based on GaN semiconductors covalently functionalized with luminescent Ru(II) complexes.

    PubMed

    López-Gejo, Juan; Arranz, Antonio; Navarro, Alvaro; Palacio, Carlos; Muñoz, Elías; Orellana, Guillermo

    2010-02-17

    Covalent tethering of a Ru(II) dye to gallium nitride surfaces has been accomplished as a key step in the development of innovative sensing devices in which the indicator support (semiconductor) plays the role of both support and excitation source. Luminescence emission decays and time-resolved emission spectra confirm the presence of the dye on the semiconductor surfaces, while X-ray photoelectron spectroscopy proves its covalent bonding. The O(2) sensitivity of the new device is comparable to those of other ruthenium-based sensor systems. This achievement paves the way to a new generation of integrable ultracompact microsensors that combine semiconductor emitter-probe assemblies.

  17. Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends.

    PubMed

    Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

    2016-08-02

    Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed.

  18. Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends

    PubMed Central

    Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

    2016-01-01

    Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed. PMID:28773772

  19. Design and simulation of a semiconductor chip-based visible - NIR spectrometer for Earth observation

    NASA Astrophysics Data System (ADS)

    Coote, J.; Woolliams, E.; Fox, N.; Goodyer, I. D.; Sweeney, S. J.

    2014-03-01

    We present the development of a novel semiconductor chip-based spectrometer for calibration of Earth observation instruments. The chip follows the Solo spectroscopy approach utilising an array of microdisk resonators evanescently coupled to a central waveguide. Each resonator is tuned to select out a specific wavelength from the incoming spectrum, and forms a p-i-n junction in which current is generated when light of the correct wavelength is present. In this paper we discuss important design aspects including the choice of semiconductor material, design of semiconductor quantum well structures for optical absorption, and design and optimisation of the waveguide and resonators.

  20. Redox characterization of semiconductors based on electrochemical measurements combined with UV-Vis diffuse reflectance spectroscopy.

    PubMed

    Świętek, Elżbieta; Pilarczyk, Kacper; Derdzińska, Justyna; Szaciłowski, Konrad; Macyk, Wojciech

    2013-09-14

    Several techniques can be applied to characterize redox properties of wide bandgap semiconductors, however some of them are of limited use. In this paper we propose a new modification of the old spectroelectrochemical method developed two decades ago. A procedure based on measurements of the reflectance changes as a function of potential applied to the electrode coated with the studied material appears to be a very convenient tool for characterizing redox properties of semiconductors, forming either transparent or opaque films at a platinum electrode. A discussion on the measured redox parameters of semiconductor films concludes with a definition of a new term, the absorption onset potential of the material.

  1. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

    SciTech Connect

    Tanaka, Masaaki; Ohya, Shinobu Nam Hai, Pham

    2014-03-15

    Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

  2. Subpicosecond Carrier Dynamics in Semiconductor Lasers and Lasers Based on Intersubband Transition.

    NASA Astrophysics Data System (ADS)

    Sung, Chun-Yung

    Recently, research for semiconductor lasers has proceeded in two directions. One direction is towards faster modulation speed for greater optical communication capacity. The second direction is towards long wavelength (10-100 mun) coherent radiation from the novel quantum well laser structures. In both cases, a fundamental understanding of carrier dynamics in the subpicosecond time scale is extremely important. This thesis explores the ultrafast carrier relaxation dynamics in several important optoelectronic semiconductor structures, with an emphasis on intersubband relaxation dynamics. Amplified femtosecond pulses are used for the generation of a femtosecond white light continuum, which has been used for the femtosecond differential transmission spectroscopy. We extensively studied the carrier relaxation for both low and high density excitation. The carrier capture, which is the intrinsic limit to the highest modulation bandwidth for SCH quantum well semiconductor lasers, has been time-resolved via femtosecond differential transmission spectroscopy. Strong capture resonances have been observed. Since the capture experiments reported to date do not directly measure the capture under conditions of laser operation, we have extended a three-pulse technique to remove carriers from the gain region of an inverted quantum well and monitor the gain recovery. This yields capture and relaxation times more appropriate for comparison with modulated laser operation. The gain recovery in a separate-confinement quantum-well structure limited by the carrier capture is directly time-resolved as well as spectral hole burning. Long carrier capture times are observed in the case of high density excitation due to Pauli-exclusion principle. The carrier tunneling dynamics in the new developed high speed tunneling injection laser (TIL) are also spectrally and temporally resolved. The measured ultrafast tunneling times confirm the TIL's potential for high speed applications. Ultrafast

  3. A surface intrinsic feature based method (SIFBM) for the characterization of optical microstructure

    NASA Astrophysics Data System (ADS)

    Cheung, C. F.; Kong, L. B.; Lee, W. B.; To, S.

    2008-12-01

    Optical microstructures are small scale topologies which are generally classified as grooves, pyramids, microlens arrays, lenticulations, echells, etc. They are widely used in advanced optics applications. Currently, there is lack of methods for the characterization of surface quality for optical microstructures with sub-micromenter form accuracy and surface finish in the nanometer range. This paper presents a Surface Intrinsic Feature Based Method (SIFBM) which makes use of surface intrinsic properties such as curvatures, normal vectors, torsion, intrinsic frames, etc. They are mapped as special images and image processing techniques are then employed to conduct image registration or correspondences searching by some algorithms such as correlation functions. The surface matching is optimized by corresponding vectors deviations. In the present study, a prototype surface characterization system has been built based on the SIFBM. Primary experimental work has been conducted to validate the proposed method. The results demonstrate that the SIFBM has potential advantages over existing methods.

  4. Controlled assembly and electronics in semiconductor nanocrystal-based devices

    NASA Astrophysics Data System (ADS)

    Drndic, Marija

    2006-03-01

    I will discuss the assembly of semiconductor nanocrystals (CdSe and PbSe) into electronic devices and the basic mechanisms of charge transport in nanocrystal arrays [1-4]. Spherical CdSe nanocrystals show robust memory effects that can be exploited for memory applications [1]. Nanocrystal memory can be erased electrically or optically and is rewritable. In PbSe nanocrystal arrays, as the interdot coupling is increased, the system evolves from an insulating regime dominated by Coulomb blockade to a semiconducting regime, where hopping conduction is the dominant transport mechanism [2]. Two-dimensional CdSe nanorod arrays show striking and anomalous transport properties, including strong and reproducible non-linearities and current oscillations with dc-voltage [4]. I will also discuss imaging of the charge transport in nanocrystal-based electronic devices. Nanocrystal arrays were investigated using electrostatic force microscopy (EFM) and transmission electron microscopy (TEM) [3]. Changes in lattice and transport properties upon annealing in vacuum were revealed. Local charge transport was directly imaged by EFM and correlated to nanopatterns observed with TEM. This work shows how charge transport in complex nanocrystal networks can be identified with nm resolution [3]. This work was supported by the ONR grant N000140410489, the NSF grants DMR-0449553 and MRSEC DMR00-79909, and the ACS PRF grant 41256-G10. References:1) Fischbein M. D. and Drndic M., ``CdSe nanocrystal quantum-dot memory,'' Applied Physics Letters, 86 (19), 193106, 2005.2) H. E. Romero and Drndic M., ``Coulomb blockade and hopping conduction in PbSe quantum dots,'' Physical Review Letters 95, 156801, 2005.3) Hu Z., Fischbein M. D. and Drndic M., ``Local charge transport in two-dimensional PbSe nanocrystal arrays studied by electrostatic force microscopy",'' Nano Letters 5 (7), 1463, 2005.4) Romero H.E., Calusine G. and Drndic M., ``Current oscillations, switching and hysteresis in CdSe nanorod

  5. Electrically pumped spaser based on semiconductor film / graphene / dielectric structure

    NASA Astrophysics Data System (ADS)

    Dadoenkova, Yuliya S.; Moiseev, Sergey G.; Zolotovskii, Igor O.; Pavlov, Dmitrii A.

    2017-09-01

    We propose a model of slow surface plasmon polariton distributed feedback laser (spaser) with pump by drift currents in graphene. This model is a kind of hybrid of a distributed feedback laser and a well-known in microwave technology travelling-wave tube. The amplification of SPP wave is created by drift currents in the graphene, and the feedback is realized due to a periodic change of the semiconductor film thickness.

  6. Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

  7. Study of intrinsic anchoring in nematic liquid crystals based on modified Gruhn Hess pair potential

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi-Dong; Zhang, Yan-Jun

    2008-01-01

    A nematic liquid crystal slab composed of N molecular layers is investigated using a simple cubic lattice model, based upon the molecular pair potential which is spatially anisotropic and dependent on elastic constants of liquid crystals. A perfect nematic order is assumed in the theoretical treatment, which means the orientation of the molecular long axis coincides with the director of liquid crystal and the total free energy equals to the total interaction energy. We present a modified Gruhn Hess model, which is relative to the splay-bend elastic constant K. Furthermore, we have studied the free nematic interfacial behavior (intrinsic anchoring) by this model in the assumption of the perfect nematic order. We find that the preferred orientation at the free interface and the intrinsic anchoring strength change with the value of modification, and that the director profile can be determined by the competition of the intrinsic anchoring with external forces present in the system. Also we simulate the intrinsic anchoring at different temperatures using Monte Carlo method and the simulation results show that the intrinsic anchoring favors planar alignment and the free interface is more disordered than the bulk.

  8. A game theoretic framework for incentive-based models of intrinsic motivation in artificial systems

    PubMed Central

    Merrick, Kathryn E.; Shafi, Kamran

    2013-01-01

    An emerging body of research is focusing on understanding and building artificial systems that can achieve open-ended development influenced by intrinsic motivations. In particular, research in robotics and machine learning is yielding systems and algorithms with increasing capacity for self-directed learning and autonomy. Traditional software architectures and algorithms are being augmented with intrinsic motivations to drive cumulative acquisition of knowledge and skills. Intrinsic motivations have recently been considered in reinforcement learning, active learning and supervised learning settings among others. This paper considers game theory as a novel setting for intrinsic motivation. A game theoretic framework for intrinsic motivation is formulated by introducing the concept of optimally motivating incentive as a lens through which players perceive a game. Transformations of four well-known mixed-motive games are presented to demonstrate the perceived games when players' optimally motivating incentive falls in three cases corresponding to strong power, affiliation and achievement motivation. We use agent-based simulations to demonstrate that players with different optimally motivating incentive act differently as a result of their altered perception of the game. We discuss the implications of these results both for modeling human behavior and for designing artificial agents or robots. PMID:24198797

  9. A game theoretic framework for incentive-based models of intrinsic motivation in artificial systems.

    PubMed

    Merrick, Kathryn E; Shafi, Kamran

    2013-01-01

    An emerging body of research is focusing on understanding and building artificial systems that can achieve open-ended development influenced by intrinsic motivations. In particular, research in robotics and machine learning is yielding systems and algorithms with increasing capacity for self-directed learning and autonomy. Traditional software architectures and algorithms are being augmented with intrinsic motivations to drive cumulative acquisition of knowledge and skills. Intrinsic motivations have recently been considered in reinforcement learning, active learning and supervised learning settings among others. This paper considers game theory as a novel setting for intrinsic motivation. A game theoretic framework for intrinsic motivation is formulated by introducing the concept of optimally motivating incentive as a lens through which players perceive a game. Transformations of four well-known mixed-motive games are presented to demonstrate the perceived games when players' optimally motivating incentive falls in three cases corresponding to strong power, affiliation and achievement motivation. We use agent-based simulations to demonstrate that players with different optimally motivating incentive act differently as a result of their altered perception of the game. We discuss the implications of these results both for modeling human behavior and for designing artificial agents or robots.

  10. Lewis Acid-Base Chemistry of 7-Azaisoindigo-Based Organic Semiconductors.

    PubMed

    Randell, Nicholas M; Fransishyn, Kyle M; Kelly, Timothy L

    2017-07-26

    Low-band-gap organic semiconductors are important in a variety of organic electronics applications, such as organic photovoltaic devices, photodetectors, and field effect transistors. Building on our previous work, which introduced 7-azaisoindigo as an electron-deficient building block for the synthesis of donor-acceptor organic semiconductors, we demonstrate how Lewis acids can be used to further tune the energies of the frontier molecular orbitals. Coordination of a Lewis acid to the pyridinic nitrogen of 7-azaisoindigo greatly diminishes the electron density in the azaisoindigo π-system, resulting in a substantial reduction in the lowest unoccupied molecular orbital (LUMO) energy. This results in a smaller highest occupied molecular orbital-LUMO gap and shifts the lowest-energy electronic transition well into the near-infrared region. Both H(+) and BF3 are shown to coordinate to azaisoindigo and affect the energy of the S0 → S1 transition. A combination of time-dependent density functional theory and UV/vis and (1)H NMR spectroscopic titrations reveal that when two azaisoindigo groups are present and high concentrations of acid are used, both pyridinic nitrogens bind Lewis acids. Importantly, we demonstrate that this acid-base chemistry can be carried out at the solid-vapor interface by exposing thin films of aza-substituted organic semiconductors to vapor-phase BF3·Et2O. This suggests the possibility of using the BF3-bound 7-azaisoindigo-based semiconductors as n-type materials in various organic electronic applications.

  11. Flexible OFDM-based access systems with intrinsic function of chromatic dispersion compensation

    NASA Astrophysics Data System (ADS)

    Konishi, Tsuyoshi; Murakawa, Takuya; Nagashima, Tomotaka; Hasegawa, Makoto; Shimizu, Satoshi; Hattori, Kuninori; Okuno, Masayuki; Mino, Shinji; Himeno, Akira; Uenohara, Hiroyuki; Wada, Naoya; Cincotti, Gabriella

    2015-12-01

    Cost-effective and tunable chromatic dispersion compensation in a fiber link are still an open issue in metro and access networks to cope with increasing costs and power consumption. Intrinsic chromatic dispersion compensation functionality of optical fractional orthogonal frequency division multiplexing is discussed and experimentally demonstrated using dispersion-tunable transmitter and receiver based on wavelength selective switching devices.

  12. Stimulating Students' Intrinsic Motivation for Learning Chemistry through the Use of Context-Based Learning Modules

    ERIC Educational Resources Information Center

    Vaino, Katrin; Holbrook, Jack; Rannikmae, Miia

    2012-01-01

    This paper introduces a research project in which five chemistry teachers, working in cooperation with university researchers, implemented a new teaching approach using context-based modules specially designed to stimulate the intrinsic motivation of students. The intention was to induce change in chemistry teachers' teaching approach from more…

  13. X-ray Characterization of Oxide-based Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Idzerda, Yves

    2008-05-01

    Although the evidence for magnetic semiconductors (not simply semiconductors which are ferromagnetic) is compelling, there is much uncertainty in the mechanism for the polarization of the carriers, suggesting that it must be quite novel. Recent experimental evidence suggests that this mechanism is similar to the polaron percolation theory proposed by Kaminski and Das Sarma,ootnotetextKaminski and S. Das Sarma, Physical Review Letters 88, 247202 (2002). which was recently applied specifically to doped oxides by Coey et al.ootnotetextJ. M. D. Coey, M. Venkatesan, and C. B. Fitzgerald, Nature Materials 4, 173 (2005). where the ferromagnetism is driven by the percolation of polarons generated by defects or dopants. We have used X-ray absorption spectroscopy at the L-edges and K-edges for low concentrations transition metal (TM) doped magnetic oxides (including TiO2, La1-xSrxO3, HfO2, and In2O3). We have found that in most cases, the transition metal assumes a valence consistent with being at a substitutional, and not interstitial site. We have also measured the X-ray Magnetic Circular Dichroism spectra. Although these materials show strong bulk magnetization, we are unable to detect a robust dichroism feature associated with magnetic elements in the host semiconductor. In the cases where a dichroism signal was observed, it was very weak and could be ascribed to a distinct ferromagnetic phase (TM metal cluster, TM oxide particulate, etc.) separate from the host material. This fascinating absence of a dichroic signal and its significant substantiation of important features of the polaron percolation model may help to finally resolve the issue of ferromagnetism in magnetically doped oxides.

  14. High-efficiency photovoltaics based on semiconductor nanostructures

    SciTech Connect

    Yu, Paul K.L.; Yu, Edward T.; Wang, Deli

    2011-10-31

    The objective of this project was to exploit a variety of semiconductor nanostructures, specifically semiconductor quantum wells, quantum dots, and nanowires, to achieve high power conversion efficiency in photovoltaic devices. In a thin-film device geometry, the objectives were to design, fabricate, and characterize quantum-well and quantum-dot solar cells in which scattering from metallic and/or dielectric nanostructures was employed to direct incident photons into lateral, optically confined paths within a thin (~1-3um or less) device structure. Fundamental issues concerning nonequilibrium carrier escape from quantum-confined structures, removal of thin-film devices from an epitaxial growth substrate, and coherent light trapping in thin-film photovoltaic devices were investigated. In a nanowire device geometry, the initial objectives were to engineer vertical nanowire arrays to optimize optical confinement within the nanowires, and to extend this approach to core-shell heterostructures to achieve broadspectrum absorption while maintaining high opencircuit voltages. Subsequent work extended this approach to include fabrication of nanowire photovoltaic structures on low-cost substrates.

  15. Anhydrous crystals of DNA bases are wide gap semiconductors.

    PubMed

    Maia, F F; Freire, V N; Caetano, E W S; Azevedo, D L; Sales, F A M; Albuquerque, E L

    2011-05-07

    We present the structural, electronic, and optical properties of anhydrous crystals of DNA nucleobases (guanine, adenine, cytosine, and thymine) found after DFT (Density Functional Theory) calculations within the local density approximation, as well as experimental measurements of optical absorption for powders of these crystals. Guanine and cytosine (adenine and thymine) anhydrous crystals are predicted from the DFT simulations to be direct (indirect) band gap semiconductors, with values 2.68 eV and 3.30 eV (2.83 eV and 3.22 eV), respectively, while the experimentally estimated band gaps we have measured are 3.83 eV and 3.84 eV (3.89 eV and 4.07 eV), in the same order. The electronic effective masses we have obtained at band extremes show that, at low temperatures, these crystals behave like wide gap semiconductors for electrons moving along the nucleobases stacking direction, while the hole transport are somewhat limited. Lastly, the calculated electronic dielectric functions of DNA nucleobases crystals in the parallel and perpendicular directions to the stacking planes exhibit a high degree of anisotropy (except cytosine), in agreement with published experimental results.

  16. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  17. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  18. Assessing Online Textual Feedback to Support Student Intrinsic Motivation Using a Collaborative Text-Based Dialogue System: A Qualitative Study

    ERIC Educational Resources Information Center

    Shroff, Ronnie H.; Deneen, Christopher

    2011-01-01

    This paper assesses textual feedback to support student intrinsic motivation using a collaborative text-based dialogue system. A research model is presented based on research into intrinsic motivation, and the specific construct of feedback provides a framework for the model. A qualitative research methodology is used to validate the model.…

  19. Thermodynamic properties of semiconductor compounds studied based on Debye-Waller factors

    NASA Astrophysics Data System (ADS)

    Van Hung, Nguyen; Toan, Nguyen Cong; Ba Duc, Nguyen; Vuong, Dinh Quoc

    2015-08-01

    Thermodynamic properties of semiconductor compounds have been studied based on Debye-Waller factors (DWFs) described by the mean square displacement (MSD) which has close relation with the mean square relative displacement (MSRD). Their analytical expressions have been derived based on the statistical moment method (SMM) and the empirical many-body Stillinger-Weber potentials. Numerical results for the MSDs of GaAs, GaP, InP, InSb, which have zinc-blende structure, are found to be in reasonable agreement with experiment and other theories. This paper shows that an elements value for MSD is dependent on the binary semiconductor compound within which it resides.

  20. Ultrafast switching based on field optical bistability in nano-film of semiconductor

    NASA Astrophysics Data System (ADS)

    Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

    2016-09-01

    Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.

  1. Semiconductor meta-surface based perfect light absorber.

    PubMed

    Liu, Guiqiang; Nie, Yiyou; Fu, Guolan; Liu, Xiaoshan; Liu, Yi; Tang, Li; Liu, Zhengqi

    2017-04-21

    We numerically proposed and demonstrated a semiconductor meta-surface light absorber, which consists of a silicon patches array on a silicon thin-film and an opaque silver substrate. The Mie resonances of the silicon patches and the fundamental cavity mode of the ultra-thin silicon film couple strongly to the incident optical field, leading to a multi-band perfect absorption. The maximal absorption is above 99.5% and the absorption is polarization-independent. Moreover, the absorption behavior is scalable in the frequency region via tuning the structural parameters. These features hold the absorber platform with wide applications in optoelectronics such as hot-electron excitation and photo-detection.

  2. Strong vibration nonlinearity in semiconductor-based nanomechanical systems

    NASA Astrophysics Data System (ADS)

    Moskovtsev, Kirill; Dykman, M. I.

    2017-02-01

    We study the effect of the electron-phonon coupling on vibrational eigenmodes of nano- and micromechanical systems made of semiconductors with equivalent energy valleys. We show that the coupling can lead to a strong mode nonlinearity. The mechanism is the lifting of the valley degeneracy by the strain. The redistribution of the electrons between the valleys is controlled by a large ratio of the electron-phonon coupling constant to the electron chemical potential or temperature. We find the quartic in the strain terms in the electron free energy, which determine the amplitude dependence of the mode frequencies. This dependence is calculated for silicon microsystems. It is significantly different for different modes and the crystal orientation, and can vary nonmonotonously with the electron density and temperature.

  3. Novel semiconductor radiation detector based on mercurous halides

    NASA Astrophysics Data System (ADS)

    Chen, Henry; Kim, Joo-Soo; Amarasinghe, Proyanthi; Palosz, Withold; Jin, Feng; Trivedi, Sudhir; Burger, Arnold; Marsh, Jarrod C.; Litz, Marc S.; Wiejewarnasuriya, Priyalal S.; Gupta, Neelam; Jensen, Janet; Jensen, James

    2015-08-01

    The three most important desirable features in the search for room temperature semiconductor detector (RTSD) candidate as an alternative material to current commercially off-the-shelf (COTS) material for gamma and/or thermal neutron detection are: low cost, high performance and long term stability. This is especially important for pager form application in homeland security. Despite years of research, no RTSD candidate so far can satisfy the above 3 features simultaneously. In this work, we show that mercurous halide materials Hg2X2 (X= I, Cl, Br) is a new class of innovative compound semiconductors that is capable of delivering breakthrough advances to COTS radiation detector materials. These materials are much easier to grow thicker and larger volume crystals. They can detect gamma and potentially neutron radiation making it possible to detect two types of radiation with just one crystal material. The materials have wider bandgaps (compared to COTS) meaning higher resistivity and lower leakage current, making this new technology more compatible with available microelectronics. The materials also have higher atomic number and density leading to higher stopping power and better detector sensitivity/efficiency. They are not hazardous so there are no environmental and health concerns during manufacturing and are more stable making them more practical for commercial deployment. Focus will be on Hg2I2. Material characterization and detector performance will be presented and discussed. Initial results show that an energy resolution better than 2% @ 59.6 keV gamma from Am-241 and near 1% @ 662 keV from Cs-137 source can be achieved at room temperature.

  4. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

    PubMed Central

    Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

    2016-01-01

    Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321

  5. Solar-blind UV detectors based on wide band gap semiconductors

    NASA Astrophysics Data System (ADS)

    Schuhle, Udo; Hochedez, Jean-Francois

    Solid-state photon detectors based on semiconductors other than silicon are not yet considered mature technology but their current development opens new possibilities, also for space observations. Such devices are especially attractive for ultraviolet radiation detection, as semiconductor materials with band gaps larger than that of silicon can be produced and used as "visible-blind" or "solar-blind" detectors that are not affected by daylight. Here we evaluate the advantages of such detectors compared to silicon-based devices and report on the semiconductor detectors that have been fabricated in recent years with materials having large band-gap energies. We describe the most common pixel designs and characterize their general properties.

  6. Antimonide-Based Compound Semiconductors for Quantum Computing

    NASA Astrophysics Data System (ADS)

    Shojaei, Borzoyeh

    Quantum information science has made significant progress over the last several decades, but the eventual form a quantum computer will take has yet to be determined. Several physical systems have been shown to operate as quantum bits, or qubits, but each faces a central challenge: the qubit must be sufficiently isolated from its environment to maintain quantum coherence while simultaneously having sufficient coupling to the environment to allow quantum mechanical interactions for manipulation and measurement. An approach to achieve these conflicting requirements is to create qubits that are insensitive to small perturbing interactions within their environment by using topological properties of the physical system in which the qubits are formed. This dissertation presents studies on low-dimensional semiconductor heterostructures of InAs, GaSb and AlSb fabricated by molecular beam epitaxy with focus on relevant properties for their utilization in forming a topologically protected (TP) qubit. The theoretical basis regarding the semiconductor characteristics suitable for realizing TP qubits stipulates the need for strong spin-orbit coupled semiconductors with high carrier mobility. A comparative study of InAs/AlSb heterostructures wherein structure parameters were systematically varied led to a greater understanding of the limits to mobility in InAs quantum wells. Magnetotransport measurements using a dual-gated device geometry and a comparison of experiment to models of carrier mobility as a function of carrier density were used to identify dominant scattering mechanisms in these heterostructures. The development of dual-gated devices and high quality InAs channels with AlSb barriers led to a demonstration of the gate control of spin-orbit coupling in a high mobility InAs/AlSb quantum well in which the gate-tuned electron mobility exceeded 700,000 cm2/V·s. Analysis of low temperature magnetoresistance oscillations indicated the zero field spin-splitting could be

  7. Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

    NASA Astrophysics Data System (ADS)

    Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

    2017-08-01

    Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

  8. Development of biosensors based on the one-dimensional semiconductor nanomaterials.

    PubMed

    Yan, Shancheng; Shi, Yi; Xiao, Zhongdang; Zhou, Minmin; Yan, Wenfu; Shen, Haoliang; Hu, Dong

    2012-09-01

    Biosensors are becoming increasingly important due to their applications in biological and chemical analyses, food safety industry, biomedical diagnostics, clinical detection, and environmental monitoring. Recent years, nanostructured semiconductor materials have been used to fabricate biosensors owing to their biocompatibility, low toxicity, high electron mobility, and easy fabrication. In the present study, we focus on recent various biosensors based on the one-dimensional semiconductor nanomaterials such as electrochemical biosensor, field-effect transistors biosensor, and label-free optical biosensor. In particular, the development of the electrochemical biosensor is discussed detailedly.

  9. Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    SciTech Connect

    Yang, Ping-Fan; Guo, Yong; Zhu, Rui

    2015-07-15

    We propose a spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. We find that the periodic DMS/NB superlattices can achieve 100% spin filtering over a dramatically broader range of incident energies than the diluted-magnetic-semiconductor/semiconductor (DMS/S) case studied previously. And the positions and widths of spin-filtering bands can be manipulated effectively by adjusting the geometric parameters of the system or the strength of external magnetic field. Such a compelling filtering feature stems from the introduction of nonmagnetic barrier and the spin-dependent giant Zeeman effect induced by the external magnetic field. We also find that the external electric field can exert a significant influence on the spin-polarized transport through the DMS/NB superlattices.

  10. Multilayer hybrid LEDs based on colloidal inorganic semiconductors nanocrystal and PIN technology

    NASA Astrophysics Data System (ADS)

    Rizzo, Aurora; Mazzeo, Marco; Gigli, Giuseppe

    2008-04-01

    Light emitting devices (LEDs) based on colloidal semiconductor nanocrystals represent a matter of technological interest for the development of flat panel display and lighting systems. The appealing features of these materials are the high fluorescence efficiency, narrow ban edge emission, potential chemical stability, and tunable light emission across the visible spectrum. However the integration of these materials in the very promising PIN technology is still challenging due to the lack of an appropriate QD deposition technique. So far only wet deposition methods such as spin-coating and drop-casting have been exploited to realize QD thin film. Moreover QD thermal evaporation is not possible because of their high molecular weight. In this scenario we developed a dry, simple, and inexpensive deposition technique to transfer semiconductor QDs on organic semiconductor materials. We exploited this technique to fabricated an organic/inorganic hybrid red emitting device whit a doped hole transport layer.

  11. An ab initio based approach to optical properties of semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Bannow, L. C.; Rosenow, P.; Springer, P.; Fischer, E. W.; Hader, J.; Moloney, J. V.; Tonner, R.; Koch, S. W.

    2017-09-01

    A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band {k}\\cdot {p}-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function approach is applied to model the quantum well (QW) using the {k}\\cdot {p}-wave functions and eigenvalues as starting point for calculating the optical properties of the heterostructure. It is shown that Luttinger parameters derived from band structures computed with the TB09 density functional reproduce extrapolated values. The procedure is illustrated by computing the absorption spectra for a (AlGa)As/Ga(AsP)/(AlGa)As QW system with varying phosphide content in the active layer.

  12. Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

    SciTech Connect

    GopiReddy, Lakshmi Reddy; Tolbert, Leon M.; Ozpineci, Burak; Pinto, Joao O. P.

    2015-07-15

    Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.

  13. Organic Semiconductors based on Dyes and Color Pigments.

    PubMed

    Gsänger, Marcel; Bialas, David; Huang, Lizhen; Stolte, Matthias; Würthner, Frank

    2016-05-01

    Organic dyes and pigments constitute a large class of industrial products. The utilization of these compounds in the field of organic electronics is reviewed with particular emphasis on organic field-effect transistors. It is shown that for most major classes of industrial dyes and pigments, i.e., phthalocyanines, perylene and naphthalene diimides, diketopyrrolopyrroles, indigos and isoindigos, squaraines, and merocyanines, charge-carrier mobilities exceeding 1 cm(2) V(-1) s(-1) have been achieved. The most widely investigated molecules due to their n-channel operation are perylene and naphthalene diimides, for which even values close to 10 cm(2) V(-1) s(-1) have been demonstrated. The fact that all of these π-conjugated colorants contain polar substituents leading to strongly quadrupolar or even dipolar molecules suggests that indeed a much larger structural space shows promise for the design of organic semiconductor molecules than was considered in this field traditionally. In particular, because many of these dye and pigment chromophores demonstrate excellent thermal and (photo-)chemical stability in their original applications in dyeing and printing, and are accessible by straightforward synthetic protocols, they bear a particularly high potential for commercial applications in the area of organic electronics.

  14. A flagellum based study of semiconductor nanofabrication through magnetotaxis.

    PubMed

    Macwan, Isaac; Zhao, Zihe; Sobh, Omar; Patra, Prabir

    2014-01-01

    Magnetospirillum magneticum (AMB-1), which belong to alpha-protobacterium are gram-negative, single-celled prokaryotic organisms consisting of a lash-like cellular appendage called flagella. These filamentous structures are made up of a protein called flagellin that in turn consist of four sub-domains, two inner domains (D0, D1) made up of alpha-helices and two outer domains (D2, D3) made up of beta sheets. It is wrapped in a helical fashion around the longitudinal filament with the outermost sub-domain (D3) exposed to the surrounding environment. This study focuses on the interaction of the D3 with semiconducting as well as metallic single-walled carbon nanotubes (m-SWNT) and in turn presents the interactive forces between the SWNT and D3 from the perspective of size and type of SWNT. It is found that the SWNT interacts the most with glycine and threonine residues of flagellin both electrostatically as well as through van der waals. Further, the viability of magnetotactic bacteria Magnetospirillum magneticum (AMB-1) in the presence of SWNT is experimentally investigated and it is found that magnetotaxis in AMB-1 is preserved without any toxic effects due to SWNT. It is proposed that AMB-1 can be used as an efficient carrier of carbon nanotubes through its flagellum for semiconductor nanofabrication tasks.

  15. Influence of polymorphism on charge transport properties in isomers of fluorenone-based liquid crystalline semiconductors.

    PubMed

    Lincker, Frédéric; Attias, André-Jean; Mathevet, Fabrice; Heinrich, Benoît; Donnio, Bertrand; Fave, Jean-Louis; Rannou, Patrice; Demadrille, Renaud

    2012-03-28

    We measured the charge carrier mobilities for two isomers of fluorenone-based liquid crystalline organic semiconductors from their isotropic down to crystalline states through one or two mesophases. Improved charge transport properties of melt-processed crystalline films were obtained for the isomer exhibiting a highly ordered mesophase below its disordered smectic phase. This journal is © The Royal Society of Chemistry 2012

  16. Study on optical frequency domain reflectometry based on tunable semiconductor laser

    NASA Astrophysics Data System (ADS)

    Li, Guoyu; Liu, Tongqing; Zhang, Liwei; Guan, Bai-ou

    2009-11-01

    The relation of beat frequency, sweep rate, optical frequency modulation excursion and length of fiber under test (FUT) based on tunable semiconductor laser is studied. Experimental results show that the frequency of beat signal will increase when the length of the FUT, optical frequency modulation excursion or sweep rate increases.

  17. Computational molecular design of polyhedral oligomeric silsesquioxane based organic-inorganic hybrid semiconductors

    NASA Astrophysics Data System (ADS)

    Qi, Feng

    processability, cubic molecular symmetry, and the three-dimensional conjugation. The computationally designed octa(2,5-diiodophenyl)-SQ (ODIPS) shows a calculated conduction band structure similar to that of 1,4-diiodobenzene (DIB), whose high hole mobility is known from experiment. Electronic band structure calculations indicate that the SQ cages, which are by themselves insulators, contribute to the electronic transport process in these hybrid molecules, and enhance the intrinsic electronic properties of the organic semiconductor functional groups.

  18. Chasing equilibrium: measuring the intrinsic solubility of weak acids and bases.

    PubMed

    Stuart, Martin; Box, Karl

    2005-02-15

    A novel procedure is described for rapid (20-80 min) measurement of intrinsic solubility values of organic acids, bases, and ampholytes. In this procedure, a quantity of substance was first dissolved at a pH where it exists predominantly in its ionized form, and then a precipitate of the neutral (un-ionized) species was formed by changing the pH. Subsequently, the rate of change of pH due to precipitation or dissolution was monitored and strong acid and base titrant were added to adjust the pH to discover its equilibrium conditions, and the intrinsic solubility of the neutral form of the compound could then be determined. The procedure was applied to a variety of monoprotic and diprotic pharmaceutical compounds. The results were highly repeatable and had a good correlation to available published values. Data collected during the procedure provided good diagnostic information. Kinetic solubility data were also collected but provided a poor guide to the intrinsic solubility.

  19. Skull base tumours Part II. Central skull base tumours and intrinsic tumours of the bony skull base.

    PubMed

    Borges, Alexandra

    2008-06-01

    With the advances of cross-sectional imaging radiologists gained an increasing responsibility in the management of patients with skull base pathology. As this anatomic area is hidden to clinical exam, surgeons and radiation oncologists have to rely on imaging studies to plan the most adequate treatment. To fulfil these endeavour radiologists need to be knowledgeable about skull base anatomy, about the main treatment options available, their indications and contra-indications and needs to be aware of the wide gamut of pathologies seen in this anatomic region. This article will provide a radiologists' friendly approach to the central skull base and will review the most common central skull base tumours and tumours intrinsic to the bony skull base.

  20. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    SciTech Connect

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  1. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    SciTech Connect

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  2. An assignment of intrinsically disordered regions of proteins based on NMR structures.

    PubMed

    Ota, Motonori; Koike, Ryotaro; Amemiya, Takayuki; Tenno, Takeshi; Romero, Pedro R; Hiroaki, Hidekazu; Dunker, A Keith; Fukuchi, Satoshi

    2013-01-01

    Intrinsically disordered proteins (IDPs) do not adopt stable three-dimensional structures in physiological conditions, yet these proteins play crucial roles in biological phenomena. In most cases, intrinsic disorder manifests itself in segments or domains of an IDP, called intrinsically disordered regions (IDRs), but fully disordered IDPs also exist. Although IDRs can be detected as missing residues in protein structures determined by X-ray crystallography, no protocol has been developed to identify IDRs from structures obtained by Nuclear Magnetic Resonance (NMR). Here, we propose a computational method to assign IDRs based on NMR structures. We compared missing residues of X-ray structures with residue-wise deviations of NMR structures for identical proteins, and derived a threshold deviation that gives the best correlation of ordered and disordered regions of both structures. The obtained threshold of 3.2Å was applied to proteins whose structures were only determined by NMR, and the resulting IDRs were analyzed and compared to those of X-ray structures with no NMR counterpart in terms of sequence length, IDR fraction, protein function, cellular location, and amino acid composition, all of which suggest distinct characteristics. The structural knowledge of IDPs is still inadequate compared with that of structured proteins. Our method can collect and utilize IDRs from structures determined by NMR, potentially enhancing the understanding of IDPs.

  3. Intrinsic functional connectivity pattern-based brain parcellation using normalized cut

    NASA Astrophysics Data System (ADS)

    Cheng, Hewei; Song, Dandan; Wu, Hong; Fan, Yong

    2012-02-01

    In imaging data based brain network analysis, a necessary precursor for constructing meaningful brain networks is to identify functionally homogeneous regions of interest (ROIs) for defining network nodes. For parcellating the brain based on resting state fMRI data, normalized cut is one widely used clustering algorithm which groups voxels according to the similarity of functional signals. Due to low signal to noise ratio (SNR) of resting state fMRI signals, spatial constraint is often applied to functional similarity measures to generate smooth parcellation. However, improper spatial constraint might alter the intrinsic functional connectivity pattern, thus yielding biased parcellation results. To achieve reliable and least biased parcellation of the brain, we propose an optimization method for the spatial constraint to functional similarity measures in normalized cut based brain parcellation. Particularly, we first identify the space of all possible spatial constraints that are able to generate smooth parcellation, then find the spatial constraint that leads to the brain parcellation least biased from the intrinsic function pattern based parcellation, measured by the minimal Ncut value calculated based on the functional similarity measure of original functional signals. The proposed method has been applied to the parcellation of medial superior frontal cortex for 20 subjects based on their resting state fMRI data. The experiment results indicate that our method can generate meaningful parcellation results, consistent with existing functional anatomy knowledge.

  4. High-mobility pyrene-based semiconductor for organic thin-film transistors.

    PubMed

    Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

    2013-05-01

    Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

  5. Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

    PubMed

    Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

    2009-04-01

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  6. High performance field-effect ammonia sensors based on a structured ultrathin organic semiconductor film.

    PubMed

    Li, Liqiang; Gao, Peng; Baumgarten, Martin; Müllen, Klaus; Lu, Nan; Fuchs, Harald; Chi, Lifeng

    2013-07-05

    High performance organic field-effect transistor (OFET)-based ammonia sensors are demonstrated with ultrathin (4-6 molecular layers) dendritic microstripes of an organic semiconductor prepared via dip-coating. These sensors exhibit high sensitivity, fast response/recovery rate, good selectivity, low concentration detection ability, and reliable reversibility, as well as stability. Such a performance represents great progress in the field of OFET-based sensors.

  7. Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

    SciTech Connect

    Minaev, V P

    2005-11-30

    High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

  8. Effect of intrinsic nanoparticle pigmentation on the color stability of denture base acrylic resins.

    PubMed

    Goiato, Marcelo Coelho; Zuccolotti, Bruna Carolina Rossatti; dos Santos, Daniela Micheline; Sinhoreti, Mário Alexandre Coelho; Moreno, Amália

    2013-08-01

    Intrinsic pigmentation is widely used to improve the esthetic features of denture base acrylic resins. However, acrylic resin may discolor over time. The purpose of this study was to investigate the effect of intrinsic nanoparticle pigmentation on the color stability of acrylic resins. The acrylic resins, Onda Cryl, QC 20, Classico, and Lucitone, were evaluated. Twenty-one disk-shaped specimens (3 × 30 mm) were fabricated from each acrylic resin. Seven were colored with 3% Poli-Cor intrinsic pigment used to color denture base, 7 were colored with 7% pigment, and 7 were not pigmented. In addition, 7 specimens were fabricated containing only pigment. The specimens were thermally cycled 2000 times between 5°C and 55°C with a 30-second dwell time at each temperature. The specimen colors were measured with a spectrophotometer and evaluated with the CIE L*a*b* system before (B) and after thermal cycling (T). The pigment morphology was analyzed by using a scanning electron microscope (SEM) and energy-dispersive x-ray spectroscopy (EDS) techniques. The results were analyzed with 2-way nested ANOVA and Tukey HSD tests (α=.05). Classico acrylic resin with and without pigment underwent the least color change, followed in order by Lucitone, Onda Cryl, and QC-20. The presence of pigments reduced the color change of the acrylic resins significantly (P<.05) for the specimens containing 7% pigment (0.32 ±0.18 ΔE). Titanium was the sole metallic component present in the pigment, probably in the oxide form (TiO2). Nanoparticle pigments enhanced the color stability of denture base acrylic resins.

  9. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    PubMed Central

    Long, Rathnait D.; McIntyre, Paul C.

    2012-01-01

    The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS) devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  10. Unimolecular, soluble semiconductor nanoparticle-based biosensors for thrombin using charge/electron transfer.

    PubMed

    Swain, Marla D; Octain, Jashain; Benson, David E

    2008-12-01

    Duplex DNA was attached to semiconductor nanoparticles providing selective detection of thrombin. Using the method reported here, semiconductor nanoparticles can have selective sensory functions for a host of additional analytes in the future. The system uses one DNA strand that selectively binds an analyte (thrombin), while the complementary DNA strand contains a redox-active metal complex. The accessibility of the metal complex to the nanoparticle surface is increased upon thrombin binding due to unravelling of the duplex DNA secondary structure. Increased interactions between the metal complex and the nanoparticle surface will decrease nanoparticle emission intensity, through charge transfer. Initially, water-soluble nanoparticles with carboxylate-terminated monolayers showed thrombin-specific responses in emission intensity (-30% for 1:1 nanoparticle to DNA, +50% for 1:5). Despite the selective responses, the thrombin binding isotherms indicated multiple binding equilibria and more than likely nanoparticle aggregation. The need for a nonaggregative system comes from the potential employment of these sensors in live cell or living system fluorescence assays. By changing the nanoparticle capping ligand to provide an ethylene glycol-terminated monolayer, the binding isotherms fit a two-state binding model with a thrombin dissociation constant of 3 nM in a physiologically relevant buffer. This article demonstrates the need to consider capping ligand effects in designing biosensors based on semiconductor nanoparticles and demonstrates an initial DNA-attached semiconductor nanoparticle system that uses DNA-analyte binding interactions (aptamers).

  11. Intrinsic Fabry-Perot Interferometeric Sensor Based on Microfiber Created by Chemical Etching

    PubMed Central

    Wang, Ruohui; Qiao, Xueguang

    2014-01-01

    An intrinsic Fabry-Perot interferometeric sensor based on a microfiber has been demonstrated. The micro-size suspended core is created by chemical etching a photonics crystal fiber, of which the cladding has a micrometer-spaced, hexagonal array of air holes. The sensing head is fabricated by chemical etching a short section of photonics crystal fiber spliced with a single mode fiber. The temperature sensing characteristic of the interferometer has also been demonstrated and a sensitivity 14.3 pm/°C is obtained. PMID:25211196

  12. A bio-aerosol detection technique based on tryptophan intrinsic fluorescence measurement

    NASA Astrophysics Data System (ADS)

    Cai, Shuyao; Zhang, Pei; Zhu, Linglin; Zhao, Yongkai; Huang, Huijie

    2011-12-01

    Based on the measurement of intrinsic fluorescence, a set of bio-aerosol including virus aerosols detection instrument is developed, with which a method of calibration is proposed using tryptophan as the target. The experimental results show a good linear relationship between the fluorescence voltage of the instrument and the concentration of the tryptophan aerosol. An excellent correlation (R2>=0.99) with the sensitivity of 4000PPL is obtained. The research demonstrates the reliability of the bio-aerosol detection by measuring the content of tryptophan. Further more the feasibility of prejudgment to the species of bio-aerosol particles with the multi-channel fluorescence detection technology is discussed.

  13. Surface-active state of semiconductor materials based on CdTe-AIIS systems

    NASA Astrophysics Data System (ADS)

    Kirovskaya, I. A.; Nor, P. E.; Ushakov, O. V.; Pogodin, S. N.

    2017-08-01

    Surface properties (surface chemical and acid-base state) of binary and multicomponent semiconductors, i.e. CdTe-CdS and CdTe-ZnS systems components, were studied. The influence of mutual binary component CdTe on the surface acid-base state is demonstrated. Similar regularities in acid-base properties changes due to composition were determined, as well as their correlations with the regularities in bulk properties changes in the row of initial binary compounds. The conclusion was made that semiconductors - the components of the systems with acid surfaces (pHiso<7) - can be used as the materials for sensors on basic gases micro-impurities. The possibility of applying the stated regularities and correlations to facilitate the search for such materials is also noted.

  14. Hybrid Solar Cells with Prescribed Nanoscale Morphologies Based onHyperbranched Semiconductor Nanocrystals

    SciTech Connect

    Gur, Ilan; Fromer, Neil A.; Chen, Chih-Ping; Kanaras, AntoniosG.; Alivisatos, A. Paul

    2006-09-09

    In recent years, the search to develop large-area solar cells at low cost has led to research on photovoltaic (PV) systems based on nanocomposites containing conjugated polymers. These composite films can be synthesized and processed at lower costs and with greater versatility than the solid state inorganic semiconductors that comprise today's solar cells. However, the best nanocomposite solar cells are based on a complex architecture, consisting of a fine blend of interpenetrating and percolating donor and acceptor materials. Cell performance is strongly dependent on blend morphology, and solution-based fabrication techniques often result in uncontrolled and irreproducible blends, whose composite morphologies are difficult to characterize accurately. Here we incorporate 3-dimensional hyper-branched colloidal semiconductor nanocrystals in solution-processed hybrid organic-inorganic solar cells, yielding reproducible and controlled nanoscale morphology.

  15. Density functional theory calculations of III-N based semiconductors with mBJLDA

    NASA Astrophysics Data System (ADS)

    Gürel, Hikmet Hakan; Akıncı, Özden; Ünlü, Hilmi

    2017-02-01

    In this work, we present first principles calculations based on a full potential linear augmented plane-wave method (FP-LAPW) to calculate structural and electronic properties of III-V based nitrides such as GaN, AlN, InN in a zinc-blende cubic structure. First principles calculation using the local density approximation (LDA) and generalized gradient approximation (GGA) underestimate the band gap. We proposed a new potential called modified Becke-Johnson local density approximation (MBJLDA) that combines modified Becke-Johnson exchange potential and the LDA correlation potential to get better band gap results compared to experiment. We compared various exchange-correlation potentials (LSDA, GGA, HSE, and MBJLDA) to determine band gaps and structural properties of semiconductors. We show that using MBJLDA density potential gives a better agreement with experimental data for band gaps III-V nitrides based semiconductors.

  16. Fast optical recording media based on semiconductor nanostructures for image recording and processing

    SciTech Connect

    Kasherininov, P. G. Tomasov, A. A.

    2008-11-15

    Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10{sup 6} cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10{sup -2}V/cm{sup 2}, and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

  17. Shared Reading: assessing the intrinsic value of a literature-based health intervention.

    PubMed

    Longden, Eleanor; Davis, Philip; Billington, Josie; Lampropoulou, Sofia; Farrington, Grace; Magee, Fiona; Walsh, Erin; Corcoran, Rhiannon

    2015-12-01

    Public health strategies have placed increasing emphasis on psychosocial and arts-based strategies for promoting well-being. This study presents preliminary findings for a specific literary-based intervention, Shared Reading, which provides community-based spaces in which individuals can relate with both literature and one another. A 12-week crossover design was conducted with 16 participants to compare benefits associated with six sessions of Shared Reading versus a comparison social activity, Built Environment workshops. Data collected included quantitative self-report measures of psychological well-being, as well as transcript analysis of session recordings and individual video-assisted interviews. Qualitative findings indicated five intrinsic benefits associated with Shared Reading: liveness, creative inarticulacy, the emotional, the personal and the group (or collective identity construction). Quantitative data additionally showed that the intervention is associated with enhancement of a sense of 'Purpose in Life'. Limitations of the study included the small sample size and ceiling effects created by generally high levels of psychological well-being at baseline. The therapeutic potential of reading groups is discussed, including the distinction between instrumental and intrinsic value within arts-and-health interventions. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/

  18. Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Wei, Kang Liang; Liu, Xiao Yan; Du, Gang

    2013-04-01

    Using full three-dimensional (3D) technology computer-aided design (TCAD) simulations, we present a comprehensive statistical study on the random discrete dopant (RDD) induced variability in state-of-the-art intrinsic channel trigate MOSFETs. This paper is focused on the RDD variability sources that are introduced by dopant diffusion from highly doped source/drain (S/D) regions into the undoped channel region, which is referred to as junction nonabruptness (JNA). By considering a realistic lateral doping profile in the channel and evaluating the impact of JNA on the variability of performance parameters such as threshold voltage (Vth), subthreshold slope (SS), drain-induced barrier lowering (DIBL), on current (Ion), and off current (Ioff), we show that the effect of JNA can lead to substantial device variations. The nonnegligible influence of JNA puts limitations on device scaling, which is also investigated in this paper.

  19. Electronic Biosensors Based on III-Nitride Semiconductors.

    PubMed

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-01-01

    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  20. Electronic Biosensors Based on III-Nitride Semiconductors

    NASA Astrophysics Data System (ADS)

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-07-01

    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  1. Advances in graphene-based semiconductor photocatalysts for solar energy conversion: fundamentals and materials engineering.

    PubMed

    Xie, Xiuqiang; Kretschmer, Katja; Wang, Guoxiu

    2015-08-28

    Graphene-based semiconductor photocatalysis has been regarded as a promising technology for solar energy storage and conversion. In this review, we summarized recent developments of graphene-based photocatalysts, including preparation of graphene-based photocatalysts, typical key advances in the understanding of graphene functions for photocatalytic activity enhancement and methodologies to regulate the electron transfer efficiency in graphene-based composite photocatalysts, by which we hope to offer enriched information to harvest the utmost fascinating properties of graphene as a platform to construct efficient graphene-based composite photocatalysts for solar-to-energy conversion.

  2. Printable Ultrathin Metal Oxide Semiconductor-Based Conformal Biosensors.

    PubMed

    Rim, You Seung; Bae, Sang-Hoon; Chen, Huajun; Yang, Jonathan L; Kim, Jaemyung; Andrews, Anne M; Weiss, Paul S; Yang, Yang; Tseng, Hsian-Rong

    2015-12-22

    Conformal bioelectronics enable wearable, noninvasive, and health-monitoring platforms. We demonstrate a simple and straightforward method for producing thin, sensitive In2O3-based conformal biosensors based on field-effect transistors using facile solution-based processing. One-step coating via aqueous In2O3 solution resulted in ultrathin (3.5 nm), high-density, uniform films over large areas. Conformal In2O3-based biosensors on ultrathin polyimide films displayed good device performance, low mechanical stress, and highly conformal contact determined using polydimethylsiloxane artificial skin having complex curvilinear surfaces or an artificial eye. Immobilized In2O3 field-effect transistors with self-assembled monolayers of NH2-terminated silanes functioned as pH sensors. Functionalization with glucose oxidase enabled d-glucose detection at physiologically relevant levels. The conformal ultrathin field-effect transistor biosensors developed here offer new opportunities for future wearable human technologies.

  3. Hybrid Molecular and Spin-Semiconductor Based Research

    DTIC Science & Technology

    2005-02-02

    13. ABSTRACT (Maximum 200 words) This project has three thrusts. Thrust I is entitled “Integrated Bacteriorhodopsin -Based Photodetectors...studied Thrust I: Integrated Bacteriorhodopsin -Based Photodetectors The objective of this thrust was to enable a new class of optoelectronic devices by...nature of Bacteriorhodopsin (bR) have been utilized to construct novel molecular sensors, modulators, or imaging devices. The light induced photovoltage

  4. Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

    NASA Astrophysics Data System (ADS)

    Yamada, Takahiro; Ito, Joyo; Asahara, Ryohei; Watanabe, Kenta; Nozaki, Mikito; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2017-06-01

    The impact of thin Ga-oxide (GaOx) interlayers on the electrical properties of GaN-based metal-oxide-semiconductor (MOS) devices was systematically investigated. Thin thermal oxides formed at around 900 °C were found to be beneficial for improving the electrical properties of insulator/GaN interfaces, despite the fact that thermal oxidation of GaN surfaces at high temperatures proceeds by means of grain growth. Consequently, well-behaved capacitance-voltage characteristics of SiO2/GaOx/n-GaN stacked MOS capacitors with an interface state density (Dit) as low as 1.7 × 1011 cm-2 eV-1 were demonstrated. Moreover, the Dit value was further reduced for the SiO2/GaOx/GaN capacitor with a 2-nm-thick sputter-deposited GaOx interlayer. These results clearly indicate the intrinsically superior nature of the oxide/GaN interfaces and provide plausible guiding principles for fabricating high-performance GaN-MOS devices with thin GaOx interlayers.

  5. Religion-based emotional social support mediates the relationship between intrinsic religiosity and mental health.

    PubMed

    Hovey, Joseph D; Hurtado, Gabriela; Morales, Lori R A; Seligman, Laura D

    2014-01-01

    Although previous research suggests that increased religiosity is associated with better mental health and many authors have conjectured that religion-based social support may help explain this connection, scant research has directly examined whether religion-based support mediates religiosity and mental health. The present study examined whether various dimensions of religion-based support (social interaction, instrumental, and emotional) mediated the relationship between religiosity and mental health in college students in the Midwest United States. As expected, of the support dimensions, perceived emotional support was the strongest predictor of decreased hopelessness, depression, and suicide behaviors; and the relationships among intrinsic religiosity and the mental health variables were fully mediated by emotional support. These findings provide strong support to the notion that the relationship between religiosity and mental health can be reduced to mediators such as social support. Research and theoretical implications are discussed.

  6. Low-cost adaptive directly modulated optical OFDM based on semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Kashany-Mizrahi, Inbal; Sadot, Dan

    2013-10-01

    Low cost optical OFDM has great potential for next generation optical access networks and PONs, due to its high flexibility in bandwidth manipulation, and high spectral efficiency. Here, a low cost optical OFDM is proposed, based on adaptive direct modulation semiconductor optical amplifier. Adaptive current loading techniques for PAPR (peak to average power ratio) reduction are proposed and analyzed. Simulations show that the proposed adaptive techniques enable significant BER improvement.

  7. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times.

  8. New highly fluorescent biolabels based on II VI semiconductor hybrid organic inorganic nanostructures for bioimaging

    NASA Astrophysics Data System (ADS)

    Santos, B. S.; Farias, P. M. A.; Menezes, F. D.; Brasil, A. G., Jr.; Fontes, A.; Romão, L.; Amaral, J. O.; Moura-Neto, V.; Tenório, D. P. L. A.; Cesar, C. L.; Barbosa, L. C.; Ferreira, R.

    2008-11-01

    Semiconductor quantum dots based on II-VI materials may be prepared to develop good biolabeling properties. In this study we present some well-succeeded results related to the preparation, functionalization and bioconjugation of CdY (Y = S, Se and Te) to biological systems (live cells and fixed tissues). These nanostructured materials were prepared using colloidal synthesis in aqueous media resulting nanoparticles with very good optical properties and an excellent resistance to photodegradation.

  9. 1×2 Multimode interference couplers based on semiconductor hollow waveguides formed from omnidirectional reflectors

    NASA Astrophysics Data System (ADS)

    Lo, Shih-Shou; Chen, Chii-Chang

    2007-07-01

    A 1×2 hollow multimode interference (MMI) coupler based on semiconductor hollow waveguides formed from omnidirectional reflectors (SHOW-ODR) is demonstrated. The device has a shorter coupling length than a conventional silicon-on-insulator MMI coupler. A 2 dB uniformity was achieved at operating wavelengths between 1520 and 1562 nm. The device exhibited a weak polarization dependence in the TE and TM modes.

  10. Retinal Stimulation on Rabbit Using Complementary Metal Oxide Semiconductor Based Multichip Flexible Stimulator toward Retinal Prosthesis

    NASA Astrophysics Data System (ADS)

    Tokuda, Takashi; Asano, Ryosuke; Sugitani, Sachie; Taniyama, Mari; Terasawa, Yasuo; Nunoshita, Masahiro; Nakauchi, Kazuaki; Fujikado, Takashi; Tano, Yasuo; Ohta, Jun

    2008-04-01

    The Functionality of a complementary metal oxide semiconductor (CMOS) LSI-based, multichip flexible retinal stimulator was demonstrated in retinal stimulation experiments on rabbits. A 1×4-configured multichip stimulator was fabricated for application to experiments on animals. An experimental procedure including surgical operations was developed, and retinal stimulation was performed with the fabricated multichip stimulator. Neural responses on the visual cortex were successfully evoked by the fabricated stimulator. The stimulator is confirmed to be applicable to acute animal experiments.

  11. Three-axis Hall transducer based on semiconductor microtubes

    NASA Astrophysics Data System (ADS)

    Vorob'ev, Alexander; Chesnitskiy, Anton; Toropov, Alexander; Prinz, Victor

    2013-10-01

    A three-axis Hall transducer based on GaAs/AlGaAs/InGaAs microtubes has been fabricated. The possibility of simultaneous measurement of all the three magnetic field components with such a transducer was demonstrated. It was also shown possible to pack the free-standing parts of the transducer with polydimethylsiloxane for protection of those parts from mechanical actions.

  12. S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities

    NASA Astrophysics Data System (ADS)

    Suryavanshi, Saurabh V.; Pop, Eric

    2016-12-01

    We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified analytical expressions for the drain current. In addition to intrinsic FET behavior, the model includes contact resistance, traps and impurities, quantum capacitance, fringing fields, high-field velocity saturation, and self-heating, the latter being found to play an important role. The model is calibrated with state-of-the-art experimental data for n- and p-type 2D-FETs, and it can be used to analyze device properties for sub-100 nm gate lengths. Using the experimental fit, we demonstrate the feasibility of circuit simulations using properly scaled devices. The complete model is implemented in SPICE-compatible Verilog-A, and a downloadable version is freely available at the nanoHUB.org.

  13. Copper-based ternary and quaternary semiconductor nanoplates: templated synthesis, characterization, and photoelectrochemical properties.

    PubMed

    Wu, Xue-Jun; Huang, Xiao; Qi, Xiaoying; Li, Hai; Li, Bing; Zhang, Hua

    2014-08-18

    Two-dimensional (2D) copper-based ternary and quaternary semiconductors are promising building blocks for the construction of efficient solution-processed photovoltaic devices at low cost. However, the facile synthesis of such 2D nanoplates with well-defined shape and uniform size remains a challenge. Reported herein is a universal template-mediated method for preparing copper-based ternary and quaternary chalcogenide nanoplates, that is, CuInS2, CuIn(x)Ga(1-x)S2, and Cu2ZnSnS4, by using a pre-synthesized CuS nanoplate as the starting template. The various synthesized nanoplates are monophasic with uniform thickness and lateral size. As a proof of concept, the Cu2ZnSnS4 nanoplates were immobilized on a Mo/glass substrate and used as semiconductor photoelectrode, thus showing stable photoelectrochemical response. The method is general and provides future opportunities for fabrication of cost-effective photovoltaic devices based on 2D semiconductors.

  14. Passivation of III-V Compound Semiconductor Based Devices

    DTIC Science & Technology

    1993-11-29

    approximately 60 A/s. The AES, Rutherford Backscattering, FIIR and stress measurements were also carried out. This work was done in collaboration with Dr ...begun to collaborate with us on the project. A brief description of these projects are listed below: 8 a) HP Research Laboratory ( Drs . S. Camnitz, K. L...DC characterization of devices. b) University of California. Santa Barbara ( Drs . B. Young, L. A. Coldren and V. Malhotra): Passivation of GaAs-based

  15. Active devices based on organic semiconductors for wearable applications.

    PubMed

    Barbaro, Massimo; Caboni, Alessandra; Cosseddu, Piero; Mattana, Giorgio; Bonfiglio, Annalisa

    2010-05-01

    Plastic electronics is an enabling technology for obtaining active (transistor based) electronic circuits on flexible and/or nonplanar surfaces. For these reasons, it appears as a perfect candidate to promote future developments of wearable electronics toward the concept of fabrics and garments made by functional (in this case, active electronic) yarns. In this paper, a panoramic view of recent achievements and future perspectives is given.

  16. Amygdala-based intrinsic functional connectivity and anxiety disorders in adolescents and young adults.

    PubMed

    Toazza, Rudineia; Franco, Alexandre Rosa; Buchweitz, Augusto; Molle, Roberta Dalle; Rodrigues, Danitsa Marcos; Reis, Roberta Sena; Mucellini, Amanda Brondani; Esper, Nathalia Bianchini; Aguzzoli, Cristiano; Silveira, Patrícia Pelufo; Salum, Giovanni Abrahão; Manfro, Gisele Gus

    2016-11-30

    Anxiety disorders (AD) are the most prevalent group of psychiatric disorders in adolescents and young adults. Nevertheless, the pathophysiology of anxiety disorders is still poorly understood. This study investigated differences in the functional connectivity of intrinsic amygdala-based networks of participants with and without AD. Resting state fMRI data were obtained from 18 participants with an AD and 19 healthy comparison individuals. Psychiatric diagnosis was assessed using standardized structured interviews. The comparison between groups was carried out using functional connectivity maps from six seed regions defined using probabilistic maps bilaterally within the amygdala (basolateral, superficial and centromedial amygdala). We found significant between-group differences in five clusters, which showed aberrant functional connectivity with the left basolateral amygdala: right precentral gyrus, right cingulate gyrus, bilateral precuneus, and right superior frontal gyrus in subjects with AD as compared with the comparison subjects. For the comparison subjects, the correlations between the amygdala and the five clusters were either non-significant, or negative. The present study suggests there is an intrinsic disruption in the communication between left basolateral amygdala and a network of brain regions involved with emotion regulation, and with the default mode network in adolescents and young adults with anxiety disorders.

  17. Pixelated CdTe detectors to overcome intrinsic limitations of crystal based positron emission mammographs

    NASA Astrophysics Data System (ADS)

    De Lorenzo, G.; Chmeissani, M.; Uzun, D.; Kolstein, M.; Ozsahin, I.; Mikhaylova, E.; Arce, P.; Cañadas, M.; Ariño, G.; Calderón, Y.

    2013-01-01

    A positron emission mammograph (PEM) is an organ dedicated positron emission tomography (PET) scanner for breast cancer detection. State-of-the-art PEMs employing scintillating crystals as detection medium can provide metabolic images of the breast with significantly higher sensitivity and specificity with respect to standard whole body PET scanners. Over the past few years, crystal PEMs have dramatically increased their importance in the diagnosis and treatment of early stage breast cancer. Nevertheless, designs based on scintillators are characterized by an intrinsic deficiency of the depth of interaction (DOI) information from relatively thick crystals constraining the size of the smallest detectable tumor. This work shows how to overcome such intrinsic limitation by substituting scintillating crystals with pixelated CdTe detectors. The proposed novel design is developed within the Voxel Imaging PET (VIP) Pathfinder project and evaluated via Monte Carlo simulation. The volumetric spatial resolution of the VIP-PEM is expected to be up to 6 times better than standard commercial devices with a point spread function of 1 mm full width at half maximum (FWHM) in all directions. Pixelated CdTe detectors can also provide an energy resolution as low as 1.5% FWHM at 511 keV for a virtually pure signal with negligible contribution from scattered events.

  18. Pixelated CdTe detectors to overcome intrinsic limitations of crystal based positron emission mammographs.

    PubMed

    De Lorenzo, G; Chmeissani, M; Uzun, D; Kolstein, M; Ozsahin, I; Mikhaylova, E; Arce, P; Cañadas, M; Ariño, G; Calderón, Y

    2013-01-01

    A positron emission mammograph (PEM) is an organ dedicated positron emission tomography (PET) scanner for breast cancer detection. State-of-the-art PEMs employing scintillating crystals as detection medium can provide metabolic images of the breast with significantly higher sensitivity and specificity with respect to standard whole body PET scanners. Over the past few years, crystal PEMs have dramatically increased their importance in the diagnosis and treatment of early stage breast cancer. Nevertheless, designs based on scintillators are characterized by an intrinsic deficiency of the depth of interaction (DOI) information from relatively thick crystals constraining the size of the smallest detectable tumor. This work shows how to overcome such intrinsic limitation by substituting scintillating crystals with pixelated CdTe detectors. The proposed novel design is developed within the Voxel Imaging PET (VIP) Pathfinder project and evaluated via Monte Carlo simulation. The volumetric spatial resolution of the VIP-PEM is expected to be up to 6 times better than standard commercial devices with a point spread function of 1 mm full width at half maximum (FWHM) in all directions. Pixelated CdTe detectors can also provide an energy resolution as low as 1.5% FWHM at 511 keV for a virtually pure signal with negligible contribution from scattered events.

  19. Pixelated CdTe detectors to overcome intrinsic limitations of crystal based positron emission mammographs

    PubMed Central

    De Lorenzo, G.; Chmeissani, M.; Uzun, D.; Kolstein, M.; Ozsahin, I.; Mikhaylova, E.; Arce, P.; Cañadas, M.; Ariño, G.; Calderón, Y.

    2013-01-01

    A positron emission mammograph (PEM) is an organ dedicated positron emission tomography (PET) scanner for breast cancer detection. State-of-the-art PEMs employing scintillating crystals as detection medium can provide metabolic images of the breast with significantly higher sensitivity and specificity with respect to standard whole body PET scanners. Over the past few years, crystal PEMs have dramatically increased their importance in the diagnosis and treatment of early stage breast cancer. Nevertheless, designs based on scintillators are characterized by an intrinsic deficiency of the depth of interaction (DOI) information from relatively thick crystals constraining the size of the smallest detectable tumor. This work shows how to overcome such intrinsic limitation by substituting scintillating crystals with pixelated CdTe detectors. The proposed novel design is developed within the Voxel Imaging PET (VIP) Pathfinder project and evaluated via Monte Carlo simulation. The volumetric spatial resolution of the VIP-PEM is expected to be up to 6 times better than standard commercial devices with a point spread function of 1 mm full width at half maximum (FWHM) in all directions. Pixelated CdTe detectors can also provide an energy resolution as low as 1.5% FWHM at 511 keV for a virtually pure signal with negligible contribution from scattered events. PMID:23750176

  20. The determination of the intrinsic and extrinsic parameters of virtual camera based on OpenGL

    NASA Astrophysics Data System (ADS)

    Li, Suqi; Zhang, Guangjun; Wei, Zhenzhong

    2006-11-01

    OpenGL is the international standard of 3D image. The 3D image generation by OpenGL is similar to the shoot by camera. This paper focuses on the application of OpenGL to computer vision, the OpenGL 3D image is regarded as virtual camera image. Firstly, the imaging mechanism of OpenGL has been analyzed in view of perspective projection transformation of computer vision camera. Then, the relationship between intrinsic and extrinsic parameters of camera and function parameters in OpenGL has been analysed, the transformation formulas have been deduced. Thereout the computer vision simulation has been realized. According to the comparison between the actual CCD camera images and virtual camera images(the parameters of actual camera are the same as virtual camera's) and the experiment results of stereo vision 3D reconstruction simulation, the effectiveness of the method with which the intrinsic and extrinsic parameters of virtual camera based on OpenGL are determined has been verified.

  1. Intrinsic interference mitigating coordinated beamforming for the FBMC/OQAM based downlink

    NASA Astrophysics Data System (ADS)

    Cheng, Yao; Li, Peng; Haardt, Martin

    2014-12-01

    In this work, we propose intrinsic interference mitigating coordinated beamforming (IIM-CBF)-based transmission strategies for the downlink of multi-user multiple-input-multiple-out (MIMO) systems and coordinated multi-point (CoMP) systems where filter bank based multi-carrier with offset quadrature amplitude modulation (FBMC/OQAM) is employed. Our goal is to alleviate the dimensionality constraint imposed on the state-of-the-art solutions for FBMC/OQAM-based space division multiple access that the total number of receive antennas of the users must not exceed the number of transmit antennas at the base station. First, two IIM-CBF algorithms are developed for a single-cell multi-user MIMO downlink system. The central idea is to jointly and iteratively calculate the precoding matrix and decoding matrix for each subcarrier to mitigate the multi-user interference as well as the intrinsic interference inherent in FBMC/OQAM-based systems. Second, for a CoMP downlink scenario where partial coordination among the base stations is considered, the application of coordinated beamforming-based transmission schemes is further investigated. An appropriate IIM-CBF technique is proposed. Simulation results show that when the number of transmit antennas at the base station is equal to the total number of receive antennas of the users, the proposed IIM-CBF algorithm outperforms the existing transmission strategies for FBMC/OQAM-based multi-user MIMO downlink systems. Moreover, we evaluate the performances of the IIM-CBF schemes in the downlink of multi-user MIMO systems and CoMP systems where the total number of receive antennas of users exceeds the number of transmit antennas at the base station. It is observed that by employing the IIM-CBF techniques, FBMC/OQAM systems achieve a similar bit error rate (BER) performance as its orthogonal frequency division multiplexing with the cyclic prefix insertion (CP-OFDM)-based counterpart while exhibiting superiority in terms of a higher

  2. Anisotropy of the electron g factor in quantum wells based on cubic semiconductors

    SciTech Connect

    Alekseev, P. S.

    2013-09-15

    A new mechanism for the spin splitting of electron levels in asymmetric quantum wells based on GaAs-type semiconductors relative to rotations of the magnetic field in the well plane is suggested. It is demonstrated that the anisotropy of the Zeeman splitting (linear in a magnetic field) arises in asymmetric quantum wells due to the interface spin-orbit terms in the electron Hamiltonian. In the case of symmetric quantum wells, it is shown that the anisotropy of the Zeeman splitting is a cubic function of the magnitude of the magnetic field, depends on the direction of the magnetic field in the interface plane as the fourth-order harmonic, and is governed by the spin-orbit term of the fourth order by the kinematic momentum in the electron Hamiltonian of a bulk semiconductor.

  3. Cascadable all-optical inverter based on a nonlinear vertical-cavity semiconductor optical amplifier.

    PubMed

    Zhang, Haijiang; Wen, Pengyue; Esener, Sadik

    2007-07-01

    We report, for the first time to our knowledge, the operation of a cascadable, low-optical-switching-power(~10 microW) small-area (~100 microm(2)) high-speed (80 ps fall time) all-optical inverter. This inverter employs cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics of an electrically pumped vertical-cavity semiconductor optical amplifier (VCSOA). The measured transfer characteristics of such an optical inverter resemble those of standard electronic metal-oxide semiconductor field-effect transistor-based inverters exhibiting high noise margin and high extinction ratio (~9.3 dB), making VCSOAs an ideal building block for all-optical logic and memory.

  4. ZnCdMgSe-Based Semiconductors for Intersubband Devices

    SciTech Connect

    Tamargo, Maria C.

    2008-11-13

    This paper presents a review of recent results on the application of ZnCdMgSe-based wide bandgap II-VI compounds to intersubband devices such as quantum cascade lasers and quantum well infrared photodetectors operating in the mid-infrared region. The conduction band offset of ZnCdSe/ZnCdMgSe quantum well structures was determined from contactless electroreflectance measurements to be as high as 1.12 eV. FT-IR was used to measure intersubband absorption in multi-quantum well structures in the mid-IR range. Electroluminescence at 4.8 {mu}m was observed from a quantum cascade emitter structure made from these materials. Preliminary results are also presented on self assembled quantum dots of CdSe on ZnCdMgSe, and novel quantum well structures with metastable binary MgSe barriers.

  5. First principles study of Fe in diamond: A diamond-based half metallic dilute magnetic semiconductor

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2013-12-14

    Half-metallic ferromagnetic ordering in semiconductors, essential in the emerging field of spintronics for injection and transport of highly spin polarised currents, has up to now been considered mainly in III–V and II–VI materials. However, low Curie temperatures have limited implementation in room temperature device applications. We report ab initio Density Functional Theory calculations on the properties of Fe in diamond, considering the effects of lattice site, charge state, and Fermi level position. We show that the lattice sites and induced magnetic moments of Fe in diamond depend strongly on the Fermi level position and type of diamond co-doping, with Fe being energetically most favorable at the substitutional site in p-type and intrinsic diamond, while it is most stable at a divacancy site in n-type diamond. Fe induces spin polarized bands in the band gap, with strong hybridization between Fe-3d and C-2s,2p bands. We further consider Fe-Fe spin interactions in diamond and show that substitutional Fe{sup +1} in p-type diamond exhibits a half-metallic character, with a magnetic moment of 1.0 μ{sub B} per Fe atom and a large ferromagnetic stabilization energy of 33 meV, an order of magnitude larger than in other semiconductors, with correspondingly high Curie temperatures. These results, combined with diamond's unique properties, demonstrate that Fe doped p-type diamond is likely to be a highly suitable candidate material for spintronics applications.

  6. All-Optical Logic Gates Based on Semiconductor Optical Amplifiers and Tunable Filters

    NASA Astrophysics Data System (ADS)

    Zhang, Xinliang; Xu, Jing; Dong, Jianji; Huang, Dexiu

    All-optical logic gates based on semiconductor optical amplifiers (SOAs) and tunable filters are investigated in this paper. Based on single SOA and different filter detuning, five different logic gates at 40Gb/s were demonstrated and all-optical digital 2-4 encoder was also realized. All-optical generation of minterms for two input signals and three input signals are also demonstrated based on comb filters and SOAs. Advantages such as powerful function, flexible operational principle and possible integrated could help these schemes to have potential applications in optical computing and optical networks.

  7. Multiple Exciton Generation in Semiconductor Nanostructures: DFT-based Computation

    NASA Astrophysics Data System (ADS)

    Mihaylov, Deyan; Kryjevski, Andrei; Kilin, Dmitri; Kilina, Svetlana; Vogel, Dayton

    Multiple exciton generation (MEG) in nm-sized H-passivated Si nanowires (NWs), and quasi 2D nanofilms depends strongly on the degree of the core structural disorder as shown by the perturbation theory calculations based on the DFT simulations. In perturbation theory, we work to the 2nd order in the electron-photon coupling and in the (approximate) RPA-screened Coulomb interaction. We also include the effect of excitons for which we solve Bethe-Salpeter Equation. To describe MEG we calculate exciton-to-biexciton as well as biexciton-to-exciton rates and quantum efficiency (QE). We consider 3D arrays of Si29H36 quantum dots, NWs, and quasi 2D silicon nanofilms, all with both crystalline and amorphous core structures. Efficient MEG with QE of 1.3 up to 1.8 at the photon energy of about 3Egap is predicted in these nanoparticles except for the crystalline NW and film where QE ~=1. MEG in the amorphous nanoparticles is enhanced by the electron localization due to structural disorder. The exciton effects significantly red-shift QE vs. photon energy curves. Nm-sized a-Si NWs and films are predicted to have effective MEG within the solar spectrum range. Also, we find efficient MEG in the chiral single-wall Carbon nanotubes and in a perovskite nanostructure.

  8. Symmetry-Based Tight Binding Modeling of Halide Perovskite Semiconductors.

    PubMed

    Boyer-Richard, Soline; Katan, Claudine; Traoré, Boubacar; Scholz, Reinhard; Jancu, Jean-Marc; Even, Jacky

    2016-10-06

    On the basis of a general symmetry analysis, this paper presents an empirical tight-binding (TB) model for the reference Pm-3m perovskite cubic phase of halide perovskites of general formula ABX3. The TB electronic band diagram, with and without spin orbit coupling effect of MAPbI3 has been determined based on state of the art density functional theory results including many body corrections (DFT+GW). It affords access to various properties, including distorted structures, at a significantly reduced computational cost. This is illustrated with the calculation of the band-to-band absorption spectrum, the variation of the band gap under volumetric strain, as well as the Rashba effect for a uniaxial symmetry breaking. Compared to DFT approaches, this empirical model will help to tackle larger issues, such as the electronic band structure of large nanostructures, including many-body effects, or heterostructures relevant to perovskite device modeling suited to the description of atomic-scale features.

  9. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  10. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  11. Computational design of intrinsic molecular rectifiers based on asymmetric functionalization of N-phenylbenzamide

    SciTech Connect

    Ding, Wendu; Koepf, Matthieu; Koenigsmann, Christopher; Batra, Arunabh; Venkataraman, Latha; Negre, Christian F. A.; Brudvig, Gary W.; Crabtree, Robert H.; Schmuttenmaer, Charles A.; Batista, Victor S.

    2015-11-03

    Here, we report a systematic computational search of molecular frameworks for intrinsic rectification of electron transport. The screening of molecular rectifiers includes 52 molecules and conformers spanning over 9 series of structural motifs. N-Phenylbenzamide is found to be a promising framework with both suitable conductance and rectification properties. A targeted screening performed on 30 additional derivatives and conformers of N-phenylbenzamide yielded enhanced rectification based on asymmetric functionalization. We demonstrate that electron-donating substituent groups that maintain an asymmetric distribution of charge in the dominant transport channel (e.g., HOMO) enhance rectification by raising the channel closer to the Fermi level. These findings are particularly valuable for the design of molecular assemblies that could ensure directionality of electron transport in a wide range of applications, from molecular electronics to catalytic reactions.

  12. Computational design of intrinsic molecular rectifiers based on asymmetric functionalization of N-phenylbenzamide

    DOE PAGES

    Ding, Wendu; Koepf, Matthieu; Koenigsmann, Christopher; ...

    2015-11-03

    Here, we report a systematic computational search of molecular frameworks for intrinsic rectification of electron transport. The screening of molecular rectifiers includes 52 molecules and conformers spanning over 9 series of structural motifs. N-Phenylbenzamide is found to be a promising framework with both suitable conductance and rectification properties. A targeted screening performed on 30 additional derivatives and conformers of N-phenylbenzamide yielded enhanced rectification based on asymmetric functionalization. We demonstrate that electron-donating substituent groups that maintain an asymmetric distribution of charge in the dominant transport channel (e.g., HOMO) enhance rectification by raising the channel closer to the Fermi level. These findingsmore » are particularly valuable for the design of molecular assemblies that could ensure directionality of electron transport in a wide range of applications, from molecular electronics to catalytic reactions.« less

  13. Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor.

    PubMed

    Fu, Wangyang; Xu, Zhi; Bai, Xuedong; Gu, Changzhi; Wang, Enge

    2009-03-01

    We demonstrate the intrinsic memory function of ferroelectric field-effect transistors (FeFETs) based on an integration of individual single-walled carbon nanotubes (SWCNTs) and epitaxial ferroelectric films. In contrast to the previously reported "charge-storage" CNT-FET memories, whose operations are haunted by a lack of control over the "charge traps", the present CNT-FeFETs exhibit a well-defined memory hysteresis loop induced by the reversible remnant polarization of the ferroelectric films. Large memory windows approximately 4 V, data retention time up to 1 week, and ultralow power consumption (energy per bit) of femto-joule, are highlighted in this report. Further simulations and experimental results show that the memory device is valid under operation voltage less than 1 V due to an electric-field enhancement effect induced by the ultrathin SWCNTs.

  14. Operational definition of intrinsically unstructured protein sequences based on susceptibility to the 20S proteasome.

    PubMed

    Tsvetkov, Peter; Asher, Gad; Paz, Aviv; Reuven, Nina; Sussman, Joel L; Silman, Israel; Shaul, Yosef

    2008-03-01

    Intrinsically unstructured proteins (IUPs), also known as natively unfolded proteins, lack well-defined secondary and tertiary structure under physiological conditions. In recent years, growing experimental and theoretical evidence has accumulated, indicating that many entire proteins and protein sequences are unstructured under physiological conditions, and that they play significant roles in diverse cellular processes. Bioinformatic algorithms have been developed to identify such sequences in proteins for which structural data are lacking, but still generate substantial numbers of false positives and negatives. We describe here a simple and reliable in vitro assay for identifying IUP sequences based on their susceptibility to 20S proteasomal degradation. We show that 20S proteasomes digest IUP sequences, under conditions in which native, and even molten globule states, are resistant. Furthermore, we show that protein-protein interactions can protect IUPs against 20S proteasomal action. Taken together, our results thus suggest that the 20S proteasome degradation assay provides a powerful system for operational definition of IUPs.

  15. Novel methods based on 13C detection to study intrinsically disordered proteins

    NASA Astrophysics Data System (ADS)

    Felli, Isabella C.; Pierattelli, Roberta

    2014-04-01

    Intrinsically disordered proteins (IDPs) are characterized by highly flexible solvent exposed backbones and can sample many different conformations. These properties confer them functional advantages, complementary to those of folded proteins, which need to be characterized to expand our view of how protein structural and dynamic features affect function beyond the static picture of a single well defined 3D structure that has influenced so much our way of thinking. NMR spectroscopy provides a unique tool for the atomic resolution characterization of highly flexible macromolecules in general and of IDPs in particular. The peculiar properties of IDPs however have profound effects on spectroscopic parameters. It is thus worth thinking about these aspects to make the best use of the great potential of NMR spectroscopy to contribute to this fascinating field of research. In particular, after many years of dealing with exclusively heteronuclear NMR experiments based on 13C direct detection, we would like here to address their relevance when studying IDPs.

  16. GaN nanostructure-based light emitting diodes and semiconductor lasers.

    PubMed

    Viswanath, Annamraju Kasi

    2014-02-01

    GaN and related materials have received a lot of attention because of their applications in a number of semiconductor devices such as LEDs, laser diodes, field effect transistors, photodetectors etc. An introduction to optical phenomena in semiconductors, light emission in p-n junctions, evolution of LED technology, bandgaps of various semiconductors that are suitable for the development of LEDs are discussed first. The detailed discussion on photoluminescence of GaN nanostructures is made, since this is crucial to develop optical devices. Fabrication technology of many nanostructures of GaN such as nanowires, nanorods, nanodots, nanoparticles, nanofilms and their luminescence properties are given. Then the optical processes including ultrafast phenomena, radiative, non-radiative recombination, quantum efficiency, lifetimes of excitons in InGaN quantum well are described. The LED structures based on InGaN that give various important colors of red, blue, green, and their design considerations to optimize the output were highlighted. The recent efforts in GaN technology are updated. Finally the present challenges and future directions in this field are also pointed out.

  17. Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach

    PubMed Central

    Kangawa, Yoshihiro; Akiyama, Toru; Ito, Tomonori; Shiraishi, Kenji; Nakayama, Takashi

    2013-01-01

    We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial pressure and temperature, on the surface stability and growth kinetics. First, we examine the feasibility of this approach by comparing calculated surface phase diagrams of GaAs(001) with experimental results. In addition, the Ga diffusion length on GaAs(001) during molecular beam epitaxy is discussed. Next, this approach is systematically applied to the reconstruction, adsorption and incorporation on various nitride semiconductor surfaces. The calculated results for nitride semiconductor surface reconstructions with polar, nonpolar, and semipolar orientations suggest that adlayer reconstructions generally appear on the polar and the semipolar surfaces. However, the stable ideal surface without adsorption is found on the nonpolar surfaces because the ideal surface satisfies the electron counting rule. Finally, the stability of hydrogen and the incorporation mechanisms of Mg and C during metalorganic vapor phase epitaxy are discussed. PMID:28811438

  18. Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors

    NASA Astrophysics Data System (ADS)

    Jie, Wenjing; Hao, Jianhua

    2014-05-01

    Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

  19. Impact of Mindfulness-Based Stress Reduction training on intrinsic brain connectivity.

    PubMed

    Kilpatrick, Lisa A; Suyenobu, Brandall Y; Smith, Suzanne R; Bueller, Joshua A; Goodman, Trudy; Creswell, J David; Tillisch, Kirsten; Mayer, Emeran A; Naliboff, Bruce D

    2011-05-01

    The beneficial effects of mindful awareness and mindfulness meditation training on physical and psychological health are thought to be mediated in part through changes in underlying brain processes. Functional connectivity MRI (fcMRI) allows identification of functional networks in the brain. It has been used to examine state-dependent activity and is well suited for studying states such as meditation. We applied fcMRI to determine if Mindfulness-Based Stress Reduction (MBSR) training is effective in altering intrinsic connectivity networks (ICNs). Healthy women were randomly assigned to participate in an 8-week Mindfulness-Based Stress Reduction (MBSR) training course or an 8-week waiting period. After 8 weeks, fMRI data (1.5T) was acquired while subjects rested with eyes closed, with the instruction to pay attention to the sounds of the scanner environment. Group independent component analysis was performed to investigate training-related changes in functional connectivity. Significant MBSR-related differences in functional connectivity were found mainly in auditory/salience and medial visual networks. Relative to findings in the control group, MBSR subjects showed (1) increased functional connectivity within auditory and visual networks, (2) increased functional connectivity between auditory cortex and areas associated with attentional and self-referential processes, (3) stronger anticorrelation between auditory and visual cortex, and (4) stronger anticorrelation between visual cortex and areas associated with attentional and self-referential processes. These findings suggest that 8 weeks of mindfulness meditation training alters intrinsic functional connectivity in ways that may reflect a more consistent attentional focus, enhanced sensory processing, and reflective awareness of sensory experience.

  20. Physically-Based Assessment of Intrinsic Groundwater Resource Vulnerability in AN Urban Catchment

    NASA Astrophysics Data System (ADS)

    Graf, T.; Therrien, R.; Lemieux, J.; Molson, J. W.

    2013-12-01

    Several methods exist to assess intrinsic groundwater (re)source vulnerability for the purpose of sustainable groundwater management and protection. However, several methods are empirical and limited in their application to specific types of hydrogeological systems. Recent studies suggest that a physically-based approach could be better suited to provide a general, conceptual and operational basis for groundwater vulnerability assessment. A novel method for physically-based assessment of intrinsic aquifer vulnerability is currently under development and tested to explore the potential of an integrated modelling approach, combining groundwater travel time probability and future scenario modelling in conjunction with the fully integrated HydroGeoSphere model. To determine the intrinsic groundwater resource vulnerability, a fully coupled 2D surface water and 3D variably-saturated groundwater flow model in conjunction with a 3D geological model (GoCAD) has been developed for a case study of the Rivière Saint-Charles (Québec/Canada) regional scale, urban watershed. The model has been calibrated under transient flow conditions for the hydrogeological, variably-saturated subsurface system, coupled with the overland flow zone by taking into account monthly recharge variation and evapotranspiration. To better determine the intrinsic groundwater vulnerability, two independent approaches are considered and subsequently combined in a simple, holistic multi-criteria-decision analyse. Most data for the model comes from an extensive hydrogeological database for the watershed, whereas data gaps have been complemented via field tests and literature review. The subsurface is composed of nine hydrofacies, ranging from unconsolidated fluvioglacial sediments to low permeability bedrock. The overland flow zone is divided into five major zones (Urban, Rural, Forest, River and Lake) to simulate the differences in landuse, whereas the unsaturated zone is represented via the model

  1. Photonic Bell-state analysis based on semiconductor-superconductor structures

    NASA Astrophysics Data System (ADS)

    Sabag, Evyatar; Bouscher, Shlomi; Marjieh, Raja; Hayat, Alex

    2017-03-01

    We propose a compact and highly efficient scheme for complete Bell-state analysis using two-photon absorption in a superconducting proximity region of a semiconductor avalanche photodiode. One-photon transitions to the superconducting Cooper-pair based condensate in the conduction band are forbidden, whereas two-photon transitions are allowed and are strongly enhanced by superconductivity. This Cooper-pair based two-photon absorption results in a strong detection preference of a specified entangled state. Our analysis shows high detection purity of the desired Bell state with negligible false detection probability. The theoretically demonstrated concept can pave the way towards practical realizations of advanced quantum information schemes.

  2. Figures of merit for microwave photonic phase shifters based on semiconductor optical amplifiers.

    PubMed

    Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

    2012-05-07

    We theoretically and experimentally compare the performance of two fully tunable phase shifter structures based on semiconductor optical amplifiers (SOA) by means of several figures of merit common to microwave photonic systems. A single SOA stage followed by a tailored notch filter is compared with a cascaded implementation comprising three SOA-based phase shifter stages. Attention is focused on the assessment of the RF net gain, noise figure and nonlinear distortion. Recommendations on the performance optimization of this sort of approaches are detailed.

  3. THz semiconductor-based front-end receiver technology for space applications

    NASA Technical Reports Server (NTRS)

    Mehdi, Imran; Siegel, Peter

    2004-01-01

    Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

  4. Modeling the antireflective properties of composite materials based on semiconductor filamentary nanocrystals

    NASA Astrophysics Data System (ADS)

    Gorai, L. I.; Buravlev, A. D.; Ponyaev, S. A.

    2015-07-01

    The feasibility of application of films of composite materials based on semiconductor filamentary nanocrystals (FNCs) to suppress the reflection of electromagnetic radiation in the radiofrequency range is demonstrated for the first time with the use of the effective medium theory (EMT). It is shown that the reflec- tion coefficients of single- and double-layer models may be reduced several-fold and by as much as two orders of magnitude, respectively, in a wide range of parameters. The agreement of the EMT data with the results of rigorous calculations allows one to apply the zeroth-order EMT in the analysis and synthesis of antireflective composite materials based on FNCs.

  5. THz semiconductor-based front-end receiver technology for space applications

    NASA Technical Reports Server (NTRS)

    Mehdi, Imran; Siegel, Peter

    2004-01-01

    Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

  6. Dithienocoronenediimide-based copolymers as novel ambipolar semiconductors for organic thin-film transistors.

    PubMed

    Usta, Hakan; Newman, Christopher; Chen, Zhihua; Facchetti, Antonio

    2012-07-17

    A new class of ambipolar donor-acceptor π-conjugated polymers based on a dithienocoronenediimide core is presented. Solution-processed top-gate/bottom-contact thin film transistors (TFTs) exhibit electron and hole mobilities of up to 0.30 cm(2)/V·s and 0.04 cm(2)/V·s, respectively, which are the highest reported to date for an ambipolar polymer in ambient conditions. The polymers presented here are the first examples of coronenediimide-based semiconductors showing high organic TFT performances. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Study of magnetism in dilute magnetic semiconductors based on III-V nitrides

    NASA Astrophysics Data System (ADS)

    Rajaram, Rekha

    Spin based electronics, commonly referred to as "spintronics", seeks to expand the functionalities of microelectronic devices by introducing the ability to manipulate the carrier's spin, in addition to or instead of its charge. Key steps in spintronic devices include the injection, manipulation and detection of the carrier's spin. Metal-based spintronic devices such as spin valves have already found applications in high capacity hard disk drive read heads and have potential in non-volatile solid state memories. However, in order to realize the full potential of spintronics, spin manipulation must be introduced into semiconductor devices. This in turn, requires the development of magnetic semiconductors. Dilute magnetic semiconductors (DMS) are a class of magnetic semiconductors in which a fraction of the cations are substitutionally replaced by magnetic ions. The exchange interaction between the spin of the dopant atoms and the carriers in the semiconductor host is expected to bring about global ferromagnetic order in the entire lattice in these materials. The search for novel DMS candidates has been driven by two cardinal requirements - a material system with well-developed growth technology, and a high Curie temperature. In this work, we have investigated the growth and characteristics of one such promising candidate, transition-metal doped InN. InN films were deposited on c-sapphire substrates by molecular beam epitaxy, employing GaN underlayers to reduce the lattice mismatch between the film and substrate. The films were doped from 0.1-6% Cr with no noticeable trace of crystalline secondary phases detected by X-ray diffraction. However, Mn-doping led to segregation of manganese nitride. Hall effect measurements revealed n-type behavior in both undoped as well as Cr-doped films. A magnetic hysteresis, with a small remanence and coercivity was observed in Cr:InN up to room temperature, confirming long-range magnetic order in this material. X-ray magnetic circular

  8. An experimental study of GFP-based FRET, with application to intrinsically unstructured proteins

    PubMed Central

    Ohashi, Tomoo; Galiacy, Stephane D.; Briscoe, Gina; Erickson, Harold P.

    2007-01-01

    We have experimentally studied the fluorescence resonance energy transfer (FRET) between green fluorescent protein (GFP) molecules by inserting folded or intrinsically unstructured proteins between CyPet and Ypet. We discovered that most of the enhanced FRET signal previously reported for this pair was due to enhanced dimerization, so we engineered a monomerizing mutation into each. An insert containing a single fibronectin type III domain (3.7 nm end-to-end) gave a moderate FRET signal while a two-domain insert (7.0 nm) gave no FRET. We then tested unstructured proteins of various lengths, including the charged-plus-PQ domain of ZipA, the tail domain of α-adducin, and the C-terminal tail domain of FtsZ. The structures of these FRET constructs were also studied by electron microscopy and sedimentation. A 12 amino acid linker and the N-terminal 33 amino acids of the charged domain of the ZipA gave strong FRET signals. The C-terminal 33 amino acids of the PQ domain of the ZipA and several unstructured proteins with 66–68 amino acids gave moderate FRET signals. The 150 amino acid charged-plus-PQ construct gave a barely detectable FRET signal. FRET efficiency was calculated from the decreased donor emission to estimate the distance between donor and acceptor. The donor–acceptor distance varied for unstructured inserts of the same length, suggesting that they had variable stiffness (persistence length). We conclude that GFP-based FRET can be useful for studying intrinsically unstructured proteins, and we present a range of calibrated protein inserts to experimentally determine the distances that can be studied. PMID:17586775

  9. A New Type Of Fiber Optic Biosensor Based On The Intrinsic Fluorescence Of Immobilized Flavoproteins

    NASA Astrophysics Data System (ADS)

    Wolfbeis, Otto S.; Trettnak, Wolfgang

    1990-02-01

    We describe a new biosensor for monitoring the concentration of enzyme glucose, lactate, and other substrates that are metabolized by an oxidation process. The method is based on the finding that enzymes having FAD as a prosthetic group change their fluorescence during interaction with a substrate. Typical enzymes that have been studied include glucose oxidase (GOD), lactate mono-oxygenase (LMO), and cholesterol oxidase (ChOD). Their fluorescence is monitored via fiber optic light guides at wavelengths above 500 nm, following fluorescence excitation at around 410 - 450 nm. The relative fluorescence intensities of the enzymes vary to a large extent, being highest for LMO, and rather low for ChOD. Typical detection limits are in the 0.5 mM range for lactate and 1.5 mM for glucose at ambient oxygen pressure. A characteristic feature of this sensor is the narrow dynamic range which usually does not exceed 3 mM. This can be explained in terms of enzyme kinetics and diffusional processes. Unlike optical biosensors based on measurement of the intrinsic fluorescence of NADH, this sensor type has the advantages of full reversibility (because reduced FAD-based enzymes accept oxygen as a second substrate) and analytical wavelengths that are compatible with plastic or glass fiber optics. It is fairly simple in construction because the enzyme acts as both the recognition and transduction element. The method also has been applied successfully in an flow injection analysis-like type of arrangement.

  10. UXO detection and identification based on intrinsic target polarizabilities: A case history

    SciTech Connect

    Gasperikova, E.; Smith, J.T.; Morrison, H.F.; Becker, A.; Kappler, K.

    2008-07-15

    Electromagnetic induction data parameterized in time dependent object intrinsic polarizabilities allow discrimination of unexploded ordnance (UXO) from false targets (scrap metal). Data from a cart-mounted system designed for discrimination of UXO with 20 mm to 155 mm diameters are used. Discrimination of UXO from irregular scrap metal is based on the principal dipole polarizabilities of a target. A near-intact UXO displays a single major polarizability coincident with the long axis of the object and two equal smaller transverse polarizabilities, whereas metal scraps have distinct polarizability signatures that rarely mimic those of elongated symmetric bodies. Based on a training data set of known targets, object identification was made by estimating the probability that an object is a single UXO. Our test survey took place on a military base where both 4.2-inch mortar shells and scrap metal were present. The results show that we detected and discriminated correctly all 4.2-inch mortars, and in that process we added 7%, and 17%, respectively, of dry holes (digging scrap) to the total number of excavations in two different survey modes. We also demonstrated a mode of operation that might be more cost effective than the current practice.

  11. Time-of-flight analysis of charge mobility in a Cu-phthalocyanine-based discotic liquid crystal semiconductor

    NASA Astrophysics Data System (ADS)

    Fujikake, Hideo; Murashige, Takeshi; Sugibayashi, Makiko; Ohta, Kazuchika

    2004-10-01

    We used a time-of-flight method to study the charge carrier mobility properties of a molecular-aligned discotic liquid crystal semiconductor based on Cu-phthalocyanine. The heated isotropic-phase semiconductor material was sandwiched between transparent electrodes coated onto glass substrates without conventional alignment layers. This was then cooled, and a discotic liquid crystal semiconductor cell was obtained, which we used to make mobility measurements. The material had a fixed molecular alignment due to the supercooling of the hexagonal columnar mesophase. It was clarified that the carrier mobility for electrons was as high as it was for holes at room temperature. The maximum value of negative charge mobility reached 2.60×10-3cm2/Vs, although negative carrier mobility is often much lower than positive carrier mobility in other organic semiconductors, including conventional Cu-phthalocyanine vacuum-deposited films.

  12. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1995-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  13. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1994-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  14. Imaging performance comparison between a LaBr{sub 3}:Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera

    SciTech Connect

    Russo, P.; Mettivier, G.; Pani, R.; Pellegrini, R.; Cinti, M. N.; Bennati, P.

    2009-04-15

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr{sub 3}:Ce scintillator continuous crystal (49x49x5 mm{sup 3}) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14x14x1 mm{sup 3}) with 256x256 square pixels and a pitch of 55 {mu}m, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 {mu}m, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  15. Electronic modification of Cu-based chalcopyrite semiconductors induced by lattice deformation and composition alchemy

    NASA Astrophysics Data System (ADS)

    Jiang, F. D.; Feng, J. Y.

    2008-02-01

    Using first principles calculation, we systematically investigate the electronic modification of Cu-based chalcopyrite semiconductors induced by lattice deformation and composition alchemy. It is shown that the optical band gap Eg is remarkably sensitive to the anion displacement μ, resulting from the opposite shifts of conduction band minimum and valence band maximum. Meanwhile, the dependence of structural parameters of alloyed compounds on alloy composition x is demonstrated for both cation and anion alloying. The d orbitals of group-III cations are found to be of great importance in the calculation. Abnormal changes in the optical band gap Eg induced by anion alloying are addressed.

  16. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

    SciTech Connect

    Herzog, Bastian Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike; Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W.

    2015-11-16

    Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

  17. Photonic processing and realization of an all-optical digital comparator based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Singh, Simranjit; Kaur, Ramandeep; Kaler, Rajinder Singh

    2015-01-01

    A module of an all-optical 2-bit comparator is analyzed and implemented using semiconductor optical amplifiers (SOAs). By employing SOA-based cross phase modulation, the optical XNOR logic is used to get an A=B output signal, where as AB¯ and A¯B> logics operations are used to realize A>B and A

  18. A New Class of Chemical Sensors for Gases Based on Photoluminescence from Semiconductor-Derived Interfaces.

    DTIC Science & Technology

    1987-07-08

    02 962 At N CLASS OF CHEMICAL SENSORS FOR GASES ESCFO N PI4OTOLUMINESCENCE FROM U)MCONSIU!V-MWISON DEPT OF CHEMISTRY G EYER ET RL 6S8 JUL 87...4134003 4 Technical Report No. UWIS/DC/TR-87/5 A New Class of Chemical Sensors for Gases Based on Photoluminescence from Semiconductor-Derived Interfaces...volume devoted to chemical sensors ) FTIS GRA&I DTIC TAB N University of Wisconsin Unannounced 0 Department of Chemistry Justification Madison, Wisconsin

  19. Semiconductor Sensor Array Based Electronic Nose for Milk, Rancid Milk and Yoghurt Odors Identification

    NASA Astrophysics Data System (ADS)

    Botre, B.; Gharpure, D.; Shaligram, A.; Sadistap, S.

    2009-05-01

    This paper presents the use semiconductor sensor array based electronic nose for the identification of milk, rancid milk and yoghurt odors. A low cost sensor array, serial data acquisition system and E-nose software package (ESP) tool are used to generate the database, feature extraction and normalization. The MLP NN is trained using the NeuroSolutions for the identification. The network has successfully classified milk, rancid milk and yoghurt odors with 96% success rate. A sensitivity analysis is done to test the performance of the sensor data in the trained network

  20. Noble metal-free hydrogen-evolving photocathodes based on small molecule organic semiconductors

    NASA Astrophysics Data System (ADS)

    Morozan, A.; Bourgeteau, T.; Tondelier, D.; Geffroy, B.; Jousselme, B.; Artero, V.

    2016-09-01

    Organic semiconductors have great potential for producing hydrogen in a sustainable and economically-viable manner because they rely on readily available materials with highly tunable properties. We demonstrate here the relevance of heterojunctions to the construction of H2-evolving photocathodes, exclusively based on earth-abundant elements. Boron subnaphthalocyanine chloride proved a very promising acceptor in that perspective. It absorbs a part of the solar spectrum complementary to α-sexithiophene as a donor, thus generating large photocurrents and providing a record onset potential for light-driven H2 evolution under acidic aqueous conditions using a nanoparticulate amorphous molybdenum sulfide catalyst.

  1. Microwave photonic filter with multiple taps based on single semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Li, Xiang; Xu, Enming; Zhou, Lina; Yu, Yuan; Dong, Jianji; Zhang, Xinliang

    2010-08-01

    A novel technique to implement a microwave photonic filter structure with multiple taps and arbitrary frequency response is presented. The proposed filter is based on Four-Wave Mixing (FWM) and Cross-Gain Modulation (XGM) in a semiconductor optical amplifier (SOA). Two-tap notch filter and three-tap bandpass filter with arbitrary bipolar tap generation, high rejection ratio, and widely tunability are successfully demonstrated in the experiment. Extensions to this concept by adding new probe light to provide more taps and improve the bandwidth to high frequency regime are also discussed.

  2. Large ordered arrays of single photon sources based on II-VI semiconductor colloidal quantum dot.

    PubMed

    Zhang, Qiang; Dang, Cuong; Urabe, Hayato; Wang, Jing; Sun, Shouheng; Nurmikko, Arto

    2008-11-24

    In this paper, we developed a novel and efficient method of deterministically organizing colloidal particles on structured surfaces over macroscopic areas. Our approach utilizes integrated solution-based processes of dielectric encapsulation and electrostatic-force-mediated self-assembly, which allow precisely controlled placement of sub-10nm sized particles at single particle resolution. As a specific demonstration, motivated by application to single photon sources, highly ordered 2D arrays of single II-VI semiconductor colloidal quantum dots (QDs) were created by this method. Individually, the QDs display triggered single photon emission at room temperature with characteristic photon antibunching statistics, suggesting a pathway to scalable quantum optical radiative systems.

  3. Investigation of 16 × 10 Gbps DWDM System Based on Optimized Semiconductor Optical Amplifier

    NASA Astrophysics Data System (ADS)

    Rani, Aruna; Dewra, Sanjeev

    2017-08-01

    This paper investigates the performance of an optical system based on optimized semiconductor optical amplifier (SOA) at 160 Gbps with 0.8 nm channel spacing. Transmission distances up to 280 km at -30 dBm input signal power and up to 247 km at -32 dBm input signal power with acceptable bit error rate (BER) and Q-factor are examined. It is also analyzed that the transmission distance up to 292 km has been covered at -28 dBm input signal power using Dispersion Shifted (DS)-Normal fiber without any power compensation methods.

  4. Pseudospectral method based on prolate spheroidal wave functions for semiconductor nanodevice simulation

    NASA Astrophysics Data System (ADS)

    Lin, Wenbin; Kovvali, Narayan; Carin, Lawrence

    2006-07-01

    We solve Schrödinger's equation for semiconductor nanodevices by applying prolate spheroidal wave functions of order zero as basis functions in the pseudospectral method. When the functions involved in the problem are bandlimited, the prolate pseudospectral method outperforms the conventional pseudospectral methods based on trigonometric and orthogonal polynomials and related functions, asymptotically achieving similar accuracy using a factor of π/2 less unknowns than the latter. The prolate pseudospectral method also employs a more uniform spatial grid, achieving better resolution near the center of the domain.

  5. Charge carrier coherence and Hall effect in organic semiconductors.

    PubMed

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  6. Optically induced current in molecular conduction nanojunctions with semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Fainberg, Boris D.; Seideman, Tamar

    2013-06-01

    We propose a new approach to coherent control of transport via molecular junctions, which bypasses several of the hurdles to experimental realization of optically manipulated nanoelectronics noted in the previous literature. The method is based on the application of intrinsic semiconductor contacts and optical frequencies below the semiconductor bandgap. To explore the coherently controlled electronic dynamics, we introduce a density matrix formalism that accounts for both the discrete molecular state and the semiconductor quasicontinua within a single master equation and offers analytically soluble limits for a single and two-site molecular bridge. Our analytical theory predicts a new phenomenon, referred to as coherent destruction of induced tunnelling, which extends the phenomenon of coherent destruction of tunnelling frequently discussed in the previous literature. Our results illustrate the potential of semiconductor contacts in coherent control of photocurrent.

  7. Charge carrier coherence and Hall effect in organic semiconductors

    SciTech Connect

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  8. Charge carrier coherence and Hall effect in organic semiconductors

    PubMed Central

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  9. Analytical modelling of a refractive index sensor based on an intrinsic micro Fabry-Perot interferometer.

    PubMed

    Vargas-Rodriguez, Everardo; Guzman-Chavez, Ana D; Cano-Contreras, Martin; Gallegos-Arellano, Eloisa; Jauregui-Vazquez, Daniel; Hernández-García, Juan C; Estudillo-Ayala, Julian M; Rojas-Laguna, Roberto

    2015-10-15

    In this work a refractive index sensor based on a combination of the non-dispersive sensing (NDS) and the Tunable Laser Spectroscopy (TLS) principles is presented. Here, in order to have one reference and one measurement channel a single-beam dual-path configuration is used for implementing the NDS principle. These channels are monitored with a couple of identical optical detectors which are correlated to calculate the overall sensor response, called here the depth of modulation. It is shown that this is useful to minimize drifting errors due to source power variations. Furthermore, a comprehensive analysis of a refractive index sensing setup, based on an intrinsic micro Fabry-Perot Interferometer (FPI) is described. Here, the changes over the FPI pattern as the exit refractive index is varied are analytically modelled by using the characteristic matrix method. Additionally, our simulated results are supported by experimental measurements which are also provided. Finally it is shown that by using this principle a simple refractive index sensor with a resolution in the order of 2.15 × 10(-4) RIU can be implemented by using a couple of standard and low cost photodetectors.

  10. Analytical Modelling of a Refractive Index Sensor Based on an Intrinsic Micro Fabry-Perot Interferometer

    PubMed Central

    Vargas-Rodriguez, Everardo; Guzman-Chavez, Ana D.; Cano-Contreras, Martin; Gallegos-Arellano, Eloisa; Jauregui-Vazquez, Daniel; Hernández-García, Juan C.; Estudillo-Ayala, Julian M.; Rojas-Laguna, Roberto

    2015-01-01

    In this work a refractive index sensor based on a combination of the non-dispersive sensing (NDS) and the Tunable Laser Spectroscopy (TLS) principles is presented. Here, in order to have one reference and one measurement channel a single-beam dual-path configuration is used for implementing the NDS principle. These channels are monitored with a couple of identical optical detectors which are correlated to calculate the overall sensor response, called here the depth of modulation. It is shown that this is useful to minimize drifting errors due to source power variations. Furthermore, a comprehensive analysis of a refractive index sensing setup, based on an intrinsic micro Fabry-Perot Interferometer (FPI) is described. Here, the changes over the FPI pattern as the exit refractive index is varied are analytically modelled by using the characteristic matrix method. Additionally, our simulated results are supported by experimental measurements which are also provided. Finally it is shown that by using this principle a simple refractive index sensor with a resolution in the order of 2.15 × 10−4 RIU can be implemented by using a couple of standard and low cost photodetectors. PMID:26501277

  11. A design of atmospheric laser communication system based on semiconductor laser

    NASA Astrophysics Data System (ADS)

    Rao, Jionghui; Yao, Wenming; Wen, Linqiang

    2016-01-01

    This paper uses semiconductor laser with 905nm wave length as light source to design a set of short-distance atmospheric laser communication system. This system consists of laser light source, launch modulation circuit, detector, receiving and amplifying circuit and so on. First, this paper analyzes the factors which lead to the decrease of luminous power of laser communication link under the applicable environment-specific sea level, then this paper elicits the relationship of luminous power of receiving optical systems and distance, slant angle and divergence angle which departures from the laser beam axis by using gaussian beam geometric attenuation mode. Based on the two reasons that PPM modulation theory limits the transmission rate of PPM modulation, that is, this paper makes an analysis on repetition frequency and pulse width of laser, makes theoretical calculation for typical parameters of semiconductor laser and gets the repetition frequency which is 10KHz, pulse width is50ns, the transmission rate is 71.66 Kb/s, at this time, modulation digit is 9; then this paper selects frame synchronization code of PPM modulation and provides implementation method for test; lastly, programs language based on Verilog, uses the FPGA development board to realize PPM modulation code and does simulation test and hardware test. This paper uses APD as the detector of receiving and amplifying circuit. Then this paper designs optical receiving circuit such as amplifying circuit, analog-digital conversion circuit based on the characteristics of receipt.

  12. Extended-Gate Metal Oxide Semiconductor Field Effect Transistor-Based Biosensor for Detection of Deoxynivalenol

    NASA Astrophysics Data System (ADS)

    Kwon, Insu; Lee, Hee-Ho; Choi, Jinhyeon; Shin, Jang-Kyoo; Seo, Sang-Ho; Choi, Sung-Wook; Chun, Hyang Sook

    2011-06-01

    In this work, we present an extended-gate metal oxide semiconductor field effect transistor (MOSFET)-based biosensor for the detection of deoxynivalenol using a null-balancing circuit. An extended-gate MOSFET-based biosensor was fabricated by a standard complementary metal oxide semiconductor (CMOS) process and its characteristics were measured. A null-balancing circuit was used to measure the output voltage of the sensor directly, instead of measuring the drain current of the sensor. Au was used as the gate metal, which has a chemical affinity with thiol, which leads to the immobilization of a self-assembled monolayer (SAM) of mercaptohexadecanoic acid (MHDA). The SAM was used to immobilize the anti-deoxynivalenol antibody. The carboxyl group of the SAM was bound to the anti-deoxynivalenol antibody. The anti-deoxynivalenol antibody and deoxynivalenol were bound by their antigen-antibody reaction. The measurements were performed in phosphate buffered saline (PBS; pH 7.4) solution. A standard Ag/AgCl electrode was employed as a reference electrode. The bindings of a SAM, anti-deoxynivalenol antibody, and deoxynivalenol caused a variation in the output voltage of the extended-gate MOSFET-based biosensor. Surface plasmon resonance (SPR) measurement was performed to verify the interaction among the SAM, deoxynivalenol-antibody, and deoxynivalenol.

  13. Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

    SciTech Connect

    Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

    2010-08-23

    An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

  14. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    SciTech Connect

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-11-14

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

  15. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.

    PubMed

    Ruzmetov, Dmitry; Zhang, Kehao; Stan, Gheorghe; Kalanyan, Berc; Bhimanapati, Ganesh R; Eichfeld, Sarah M; Burke, Robert A; Shah, Pankaj B; O'Regan, Terrance P; Crowne, Frank J; Birdwell, A Glen; Robinson, Joshua A; Davydov, Albert V; Ivanov, Tony G

    2016-03-22

    When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice. These results present a promising path toward the implementation of high-performance electronic devices based on 2D/3D vertical heterostructures, where each of the 3D and 2D semiconductors is both a template for subsequent epitaxial growth and an active component of the device. The MoS2 monolayer triangles average 1 μm along each side, with monolayer blankets (merged triangles) exhibiting properties similar to that of single-crystal MoS2 sheets. Photoluminescence, Raman, atomic force microscopy, and X-ray photoelectron spectroscopy analyses identified monolayer MoS2 with a prominent 20-fold enhancement of photoluminescence in the center regions of larger triangles. The MoS2/GaN structures are shown to electrically conduct in the out-of-plane direction, confirming the potential of directly synthesized 2D/3D semiconductor heterostructures for vertical current flow. Finally, we estimate a MoS2/GaN contact resistivity to be less than 4 Ω·cm(2) and current spreading in the MoS2 monolayer of approximately 1 μm in diameter.

  16. Web-based interactive educational software introducing semiconductor laser dynamics: Sound of Lasers (SOL)

    NASA Astrophysics Data System (ADS)

    Consoli, Antonio; Sanchez, Jorge R.; Horche, Paloma R.; Esquivias, Ignacio

    2014-07-01

    presented. The proposed tool is addressed to the students of optical communication courses, encouraging self consolidation of the subjects learned in lectures. The semiconductor laser model is based on the well known rate equations for the carrier density, photon density and optical phase. The direct modulation of the laser is considered with input parameters which can be selected by the user. Different options for the waveform, amplitude and frequency of the injected current are available, together with the bias point. Simulation results are plotted for carrier density and output power versus time. Instantaneous frequency variations of the laser output are numerically shifted to the audible frequency range and sent to the computer loudspeakers. This results in an intuitive description of the "chirp" phenomenon due to amplitude-phase coupling, typical of directly modulated semiconductor lasers. In this way, the student can actually listen to the time resolved spectral content of the laser output. By changing the laser parameters and/or the modulation parameters, consequent variation of the laser output can be appreciated in intuitive manner. The proposed educational tool has been previously implemented by the same authors with locally executable software. In the present manuscript, we extend our previous work to a web based platform, offering improved distribution and allowing its use to the wide audience of the web.

  17. Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

    NASA Astrophysics Data System (ADS)

    Acharyya, Aritra; Banerjee, J. P.

    2014-01-01

    In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift-diffusion model is used to design double-drift region (DDR) IMPATTs based on different materials at millimeter-wave (mm-wave) and terahertz (THz) frequencies. The performance limitations of these devices are studied from the avalanche response times at different mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of GaAs and Si DDR IMPATTs are 220 GHz and 0.5 THz, respectively, whereas the same for InP and 4H-SiC DDR IMPATTs is 1.0 THz. Wz-GaN DDR IMPATTs are found to be excellent candidate for generation of RF power at THz frequencies of the order of 5.0 THz with appreciable DC to RF conversion efficiency. Further, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs as regards their RF power outputs. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

  18. Active photonic devices based on colloidal semiconductor nanocrystals and organometallic halide perovskites

    NASA Astrophysics Data System (ADS)

    Suárez Alvarez, Isaac

    2016-10-01

    Semiconductor nanocrystals have arisen as outstanding materials to develop a new generation of optoelectronic devices. Their fabrication under simple and low cost colloidal chemistry methods results in cheap nanostructures able to provide a wide range of optical functionalities. Their attractive optical properties include a high absorption cross section below the band gap, a high quantum yield emission at room temperature, or the capability of tuning the band-gap with the size or the base material. In addition, their solution process nature enables an easy integration on several substrates and photonic structures. As a consequence, these nanoparticles have been extensively proposed to develop several photonic applications, such as detection of light, optical gain, generation of light or sensing. This manuscript reviews the great effort undertaken by the scientific community to construct active photonic devices based on these nanoparticles. The conditions to demonstrate stimulated emission are carefully studied by comparing the dependence of the optical properties of the nanocrystals with their size, shape and composition. In addition, this paper describes the design of different photonic architectures (waveguides and cavities) to enhance the generation of photoluminescence, and hence to reduce the threshold of optical gain. Finally, semiconductor nanocrystals are compared to organometallic halide perovskites, as this novel material has emerged as an alternative to colloidal nanoparticles.

  19. Cyclopentadithiophene-Based Organic Semiconductors: Effect of Fluorinated Substituents on Electrochemical and Charge Transport Properties

    SciTech Connect

    Reddy, J. Sreedhar; Kale, Tejaswini; Balaji, Ganapathy; Chandrasekaran, A.; Thayumanavan, S.

    2011-03-17

    Thiophene-based semiconductors are often hole conductors that have been converted to electron-transporting materials by incorporation of electron-withdrawing groups at terminal positions, such as fluorinated substituents. This conversion of an otherwise p-type material to n-type material is often attributed to the lowering of the lowest unoccupied molecular orbital (LUMO) energy level due to the increased electron affinity in the molecule. Yet, it is not clear if lowering of LUMO energy level is a sufficient condition for yielding n-type material. Herein, we report small-molecule semiconductors based on cyclopentadithiophene (CPD), which can be orthogonally functionalized at two different positions, which allows us to tune the frontier orbital energy levels. We find that simply lowering the LUMO energy level, without inclusion of fluoro groups, does not result in conversion of the otherwise p-type material to n-type material, whereas incorporation of fluorinated substituents does. This indicates that charge transport behavior is not an exclusive function of the frontier orbital energy levels.

  20. [Study of immobilization and properties of urease for creation of a biosensor based on semiconductor structures].

    PubMed

    Bubriak, O A; Khustochka, L N; Soldatkin, A P; Starodub, N F

    1992-01-01

    Many-sided investigations of urease immobilization methods were carried out to create the biosensor devices on the base of semiconductor structures. Special attention was concentrated on the biomembrane formation by means of urease and bovine serum albumin (BSA) cross-linking by gaseous glutaraldehyde. Optimal conditions for the formation process were selected which preserve about 20% of total urease activity after the cross-linking. The properties of enzyme immobilized by the above-mentioned method have been comprehensively studied. They included the urease activity dependence on pH, ionic strength, incubation buffer capacity as well as the enzyme stability during its functioning, storing and thermoinactivation. As was shown, for immobilized ureas Km value for urea at pH 7.0 and 20 degrees C is 1.65 time less than for free enzyme. In the presence of EDTA (1 mM) the enzyme activity in the biomembrane is practically unchanged under a month storing. Biomembrane possesses good adhesion to silicon surface and its swelling level under different conditions does not exceed 35%. The conclusion is made about the prospects of the used method of biomembrane formation for biosensor technology based on semiconductor structures.

  1. Deep-subwavelength near-field imaging based on perovskites and doped semiconductors at infrared frequencies

    NASA Astrophysics Data System (ADS)

    Liu, Yongmin

    2017-05-01

    A superlens that can create sub-diffraction-limited imaging has attracted extensive interest over the past decade. In this paper, we discuss our recent work of infrared superlenses based on perovskites and doped semiconductors. Perovskite oxides show pronounced phonon resonances in the range of 10 to 30 μm, giving rise to negative permittivities around the resonant frequencies. Consequently, we can match a pair of perovskite materials with permittivities in opposite signs to fulfill the superlensing condition. Using a scattering-type scanning near-field optical microscope (s-SNOM) coupled with a tunable free-electron laser, we investigate the evanescent waves in the image plane of perovskite superlenses to address precisely the surface polariton modes, which are important to enhance imaging resolution. Sub-diffractionlimited images with resolution of λ/14 have been achieved at the superlensing wavelength. We also demonstrate a nearfield superlens based on doped semiconductors in the mid-infrared region. Highly doped n-GaAs induces a resonant enhancement of evanescent waves, leading to a significantly improved spatial resolution at the wavelength around 20 μm that is adjustable by changing the doping level. Experimentally, gold stripes below the GaAs superlens are imaged with a λ/6 subwavelength resolution by s-SNOM. Full-wave simulation results are in very good agreement with the observed superlensing effect. These results promise a wide range of applications for infrared imaging, spectroscopy and biochemical sensing at the nanoscale.

  2. Translating sanger-based routine DNA diagnostics into generic massive parallel ion semiconductor sequencing.

    PubMed

    Diekstra, Adinda; Bosgoed, Ermanno; Rikken, Alwin; van Lier, Bart; Kamsteeg, Erik-Jan; Tychon, Marloes; Derks, Ronny C; van Soest, Ronald A; Mensenkamp, Arjen R; Scheffer, Hans; Neveling, Kornelia; Nelen, Marcel R

    2015-01-01

    Dideoxy-based chain termination sequencing developed by Sanger is the gold standard sequencing approach and allows clinical diagnostics of disorders with relatively low genetic heterogeneity. Recently, new next generation sequencing (NGS) technologies have found their way into diagnostic laboratories, enabling the sequencing of large targeted gene panels or exomes. The development of benchtop NGS instruments now allows the analysis of single genes or small gene panels, making these platforms increasingly competitive with Sanger sequencing. We developed a generic automated ion semiconductor sequencing work flow that can be used in a clinical setting and can serve as a substitute for Sanger sequencing. Standard amplicon-based enrichment remained identical to PCR for Sanger sequencing. A novel postenrichment pooling strategy was developed, limiting the number of library preparations and reducing sequencing costs up to 70% compared to Sanger sequencing. A total of 1224 known pathogenic variants were analyzed, yielding an analytical sensitivity of 99.92% and specificity of 99.99%. In a second experiment, a total of 100 patient-derived DNA samples were analyzed using a blind analysis. The results showed an analytical sensitivity of 99.60% and specificity of 99.98%, comparable to Sanger sequencing. Ion semiconductor sequencing can be a first choice mutation scanning technique, independent of the genes analyzed. © 2014 American Association for Clinical Chemistry.

  3. Microfluidic separation of viruses from blood cells based on intrinsic transport processes.

    PubMed

    Zhao, Chao; Cheng, Xuanhong

    2011-09-01

    Clinical analysis of acute viral infection in blood requires the separation of viral particles from blood cells, since the cytoplasmic enzyme inhibits the subsequent viral detection. To facilitate this procedure in settings without access to a centrifuge, we present a microfluidic device to continuously purify bionanoparticles from cells based on their different intrinsic movements on the microscale. In this device, a biological sample is layered on top of a physiological buffer, and both fluids are transported horizontally at the same flow rate in a straight channel under laminar flow. While the micron sized particles such as cells sediment to the bottom layer with a predictable terminal velocity, the nanoparticles move vertically by diffusion. As their vertical travel distances have a different dependence on time, the micro- and nanoparticles can preferentially reside in the bottom and top layers respectively after certain residence time, yielding purified viruses. We first performed numerical analysis to predicate the particle separation and then tested the theory using suspensions of synthetic particles and biological samples. The experimental results using dilute synthetic particles closely matched the numerical analysis of a two layer flow system containing different sized particles. Similar purification was achieved using diluted blood spiked with human immunodeficiency virus. However, viral purification in whole blood is compromised due to extensive bioparticle collisions. With the parallelization and automation potential offered by microfluidics, this device has the potential to function as an upstream sample preparation module to continuously provide cell depleted bio-nanoparticles for downstream analysis.

  4. Colorimetric detection of Shewanella oneidensis based on immunomagnetic capture and bacterial intrinsic peroxidase activity

    NASA Astrophysics Data System (ADS)

    Wen, Junlin; Zhou, Shungui; Chen, Junhua

    2014-06-01

    Rapid detection and enumeration of target microorganisms is considered as a powerful tool for monitoring bioremediation process that typically involves cleaning up polluted environments with functional microbes. A novel colorimetric assay is presented based on immunomagnetic capture and bacterial intrinsic peroxidase activity for rapidly detecting Shewanella oneidensis, an important model organism for environmental bioremediation because of its remarkably diverse respiratory abilities. Analyte bacteria captured on the immunomagnetic beads provided a bacterial out-membrane peroxidase-amplified colorimetric readout of the immunorecognition event by oxidizing 3, 3', 5, 5'-tetramethylbenzidine (TMB) in the present of hydrogen peroxide. The high-efficiency of immunomagnetic capture and signal amplification of peroxidase activity offers an excellent detection performance with a wide dynamic range between 5.0 × 103 and 5.0 × 106 CFU/mL toward target cells. Furthermore, this method was demonstrated to be feasible in detecting S. oneidensis cells spiked in environmental samples. The proposed colorimetric assay shows promising environmental applications for rapid detection of target microorganisms.

  5. A detailed, conductance-based computer model of intrinsic sensory neurons of the gastrointestinal tract.

    PubMed

    Chambers, Jordan D; Bornstein, Joel C; Gwynne, Rachel M; Koussoulas, Katerina; Thomas, Evan A

    2014-09-01

    Intrinsic sensory neurons (ISNs) of the enteric nervous system respond to stimuli such as muscle tension, muscle length, distortion of the mucosa, and the chemical content in the lumen. ISNs form recurrent networks that probably drive many intestinal motor patterns and reflexes. ISNs express a large number of voltage- and calcium-gated ion channels, some of which are modified by inflammation or repeated physiological stimuli, but how interactions between different ionic currents in ISNs produce both normal and pathological behaviors in the intestine remains unclear. We constructed a model of ISNs including voltage-gated sodium and potassium channels, N-type calcium channels, big conductance calcium-dependent potassium (BK) channels, calcium-dependent nonspecific cation channels (NSCa), intermediate conductance calcium-dependent potassium (IK) channels, hyperpolarization-activated cation (Ih) channels, and internal calcium dynamics. The model was based on data from the literature and our electrophysiological studies. The model reproduced responses to short or long depolarizing current pulses and responses to long hyperpolarizing current pulses. Sensitivity analysis showed that Ih, IK, NSCa, and BK have the largest influence on the number of action potentials observed during prolonged depolarizations. The model also predicts that changes to the voltage of activation for Ih have a large influence on excitability, but changes to the time constant of activation for Ih have a minor effect. Our model identifies how interactions between different iconic currents influence the excitability of ISNs and highlights an important role for Ih in enteric neuroplasticity resulting from disease.

  6. SAR image change detection algorithm based on stationary wavelet and bi-dimensional intrinsic mode function

    NASA Astrophysics Data System (ADS)

    Huang, S. Q.; Wang, Z. L.; Xie, T. G.; Li, Z. C.

    2017-09-01

    Speckle noise in synthetic aperture radar (SAR) image is produced by the coherent imaging mechanism, which brings a great impact on the change information acquisition of multi-temporal SAR images. Two-dimensional stationary wavelet transform (SWT) and bi-dimensional empirical mode decomposition (BEMD) are the non-stationary signal processing theory of multi-scale transform. According to their implementation process and SAR image characteristic, this paper proposed a new multi-temporal SAR image change detection method based on the combination of the stationary wavelet transform and the bi-dimensional intrinsic mode function (BIMF) features, called SWT-BIMF algorithm. The contribution of the new algorithm includes two aspects. One is the design of the two selections of decomposition features, that is, the speckle noise filtering; another is the selected features to perform the enhance processing, so more effective change information will obtain. The feasibility of the SWT-BIMF algorithm is verified by the measured SAR image data, and good experimental results are obtained.

  7. DNA/RNA transverse current sequencing: intrinsic structural noise from neighboring bases.

    PubMed

    Alvarez, Jose R; Skachkov, Dmitry; Massey, Steven E; Kalitsov, Alan; Velev, Julian P

    2015-01-01

    Nanopore DNA sequencing via transverse current has emerged as a promising candidate for third-generation sequencing technology. It produces long read lengths which could alleviate problems with assembly errors inherent in current technologies. However, the high error rates of nanopore sequencing have to be addressed. A very important source of the error is the intrinsic noise in the current arising from carrier dispersion along the chain of the molecule, i.e., from the influence of neighboring bases. In this work we perform calculations of the transverse current within an effective multi-orbital tight-binding model derived from first-principles calculations of the DNA/RNA molecules, to study the effect of this structural noise on the error rates in DNA/RNA sequencing via transverse current in nanopores. We demonstrate that a statistical technique, utilizing not only the currents through the nucleotides but also the correlations in the currents, can in principle reduce the error rate below any desired precision.

  8. The Effects of Project-Based Learning Activities on Intrinsic Motivation and Skill Acquisition of Rural Middle School Math Students

    ERIC Educational Resources Information Center

    Yancy, Yuri G.

    2012-01-01

    This study was conducted in a middle school math class and investigated the effects of project-based activities on the middle school math students' skill acquisition and intrinsic motivation. After math-related project activities were implemented and completed, an analysis of how the students were affected in the areas of math skills and…

  9. Understanding the Influence of Intrinsic and Extrinsic Factors on Inquiry-Based Science Education at Township Schools in South Africa

    ERIC Educational Resources Information Center

    Ramnarain, Umesh

    2016-01-01

    This mixed-methods research investigated teachers' perceptions of intrinsic factors (personal attributes of the teacher) and extrinsic factors (environmental) influencing the implementation of inquiry-based science learning at township (underdeveloped urban area) high schools in South Africa. Quantitative data were collected by means of an adapted…

  10. Understanding the Influence of Intrinsic and Extrinsic Factors on Inquiry-Based Science Education at Township Schools in South Africa

    ERIC Educational Resources Information Center

    Ramnarain, Umesh

    2016-01-01

    This mixed-methods research investigated teachers' perceptions of intrinsic factors (personal attributes of the teacher) and extrinsic factors (environmental) influencing the implementation of inquiry-based science learning at township (underdeveloped urban area) high schools in South Africa. Quantitative data were collected by means of an adapted…

  11. Multianalyte biosensor based on pH-sensitive ZnO electrolyte-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Haur Kao, Chyuan; Chen, Hsiang; Ling Lee, Ming; Chun Liu, Che; Ueng, Herng-Yih; Cheng Chu, Yu; Jie Chen, Yu; Ming Chang, Kow

    2014-05-01

    Multianalyte electrolyte-insulator-semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na+, K+, urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 °C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed for use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications.

  12. Multianalyte biosensor based on pH-sensitive ZnO electrolyte–insulator–semiconductor structures

    SciTech Connect

    Haur Kao, Chyuan; Chun Liu, Che; Ueng, Herng-Yih; Chen, Hsiang Cheng Chu, Yu; Jie Chen, Yu; Ling Lee, Ming; Ming Chang, Kow

    2014-05-14

    Multianalyte electrolyte–insulator–semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na{sup +}, K{sup +}, urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 °C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed for use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications.

  13. Silicon photonics WDM interconnects based on resonant ring modulators and semiconductor mode locked laser

    NASA Astrophysics Data System (ADS)

    Müller, J.; Hauck, J.; Shen, B.; Romero-García, S.; Islamova, E.; Sharif Azadeh, S.; Joshi, S.; Chimot, N.; Moscoso-Mártir, A.; Merget, F.; Lelarge, F.; Witzens, J.

    2015-03-01

    We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps based on optical carrier generation with a single-section semiconductor mode-locked laser (SS-MLL) and modulation with a Silicon Photonics (SiP) resonant ring modulator (RRM). 18 channels are sequentially measured, whereas the best recorded eye diagrams feature signal quality factors (Q-factors) above 7. While optical re-amplification was necessary to maintain the link budgets and therefore system measurements were performed with an erbium doped fiber amplifier (EDFA), preliminary characterization done with a semiconductor optical amplifier (SOA) indicates compatibility with the latter pending the integration of an additional optical filter to select a subset of carriers and prevent SOA saturation. A systematic analysis of the relative intensity noise (RIN) of isolated comb lines and of signal Q-factors indicates that the link is primarily limited by amplified spontaneous emission (ASE) from the EDFA rather than laser RIN. Measured RIN for single comb components is below -120 dBc/Hz in the range from 7 MHz to 4 GHz and drops to the shot noise level at higher frequencies.

  14. Potential for spin-based information processing in a thin-film molecular semiconductor

    NASA Astrophysics Data System (ADS)

    Warner, Marc; Din, Salahud; Tupitsyn, Igor; Morley, Gavin; Stoneham, Marshall; Gardener, Jules; Wu, Zhenlin; Fisher, Andrew; Heutz, Sandrine; Kay, Christopher; Aeppli, Gabriel

    2014-03-01

    Organic semiconductors are studied intensively for applications in electronics and optics, and even spin-based information technology, or spintronics. Fundamental quantities in spintronics are the population relaxation time (T1) and the phase memory time (T2) : T1 measures the lifetime of a classical bit, in this case embodied by a spin oriented either parallel or antiparallel to an external magnetic field, and T2 measures the corresponding lifetime of a quantum bit, encoded in the phase of the quantum state. Here we establish that these times are surprisingly long for a common, low-cost and chemically modifiable organic semiconductor, the blue pigment copper phthalocyanine, in easily processed thin-film form of the type used for device fabrication. At 5 K, a temperature reachable using inexpensive closed-cycle refrigerators, T1 and T2 are respectively 59 ms and 2.6 ms, and at 80 K, which is just above the boiling point of liquid nitrogen, they are respectively 10 ms and 1 ms, demonstrating that the performance of thin-film copper phthalocyanine is superior to that of single-molecule magnets over the same temperature range.

  15. Semiconductor-based photoelectrochemical water splitting at the limit of very wide depletion region

    DOE PAGES

    Liu, Mingzhao; Lyons, John L.; Yan, Danhua H.; ...

    2015-11-23

    In semiconductor-based photoelectrochemical (PEC) water splitting, carrier separation and delivery largely relies on the depletion region formed at the semiconductor/water interface. As a Schottky junction device, the trade-off between photon collection and minority carrier delivery remains a persistent obstacle for maximizing the performance of a water splitting photoelectrode. Here, it is demonstrated that the PEC water splitting efficiency for an n-SrTiO3 (n-STO) photoanode is improved very significantly despite its weak indirect band gap optical absorption (α < 10⁴ cm⁻¹), by widening the depletion region through engineering its doping density and profile. Graded doped n-SrTiO3 photoanodes are fabricated with their bulkmore » heavily doped with oxygen vacancies but their surface lightly doped over a tunable depth of a few hundred nanometers, through a simple low temperature re-oxidation technique. The graded doping profile widens the depletion region to over 500 nm, thus leading to very efficient charge carrier separation and high quantum efficiency (>70%) for the weak indirect transition. As a result, this simultaneous optimization of the light absorption, minority carrier (hole) delivery, and majority carrier (electron) transport by means of a graded doping architecture may be useful for other indirect band gap photocatalysts that suffer from a similar problem of weak optical absorption.« less

  16. Semiconductor up-converter based on cascade carrier transport for infrared detection/imaging

    NASA Astrophysics Data System (ADS)

    Wang, Lei; Hao, Zhi-Biao; Luo, Yi; Kang, Jian-Bin; Wang, Lai; Xiong, Bing; Sun, Chang-Zheng; Wang, Jian; Han, Yan-Jun; Li, Hong-Tao; Wang, Lu; Wang, Wen-Xin; Chen, Hong

    2015-09-01

    The next generation infrared (IR) detection and imaging technology calls for very large-scale IR sensitive chips with non-compromised performance. IR up-converters based on mature III-V semiconductors are thought to be quite promising candidates. However, the up-converters and the corresponding up-conversion systems so far substantially fall behind traditional IR detectors in terms of device performance due to the more serious trade-off between responsivity and dark current. In this article, a cascade infrared up-converter (CIUP) is proposed. By employing cascade carrier transport, IR responsivity can be enhanced while dark current remains in fairly low level. For the fabricated 4-μm InGaAs/AlGaAs CIUP under 3.3 V at 78 K, the up-conversion efficiency of the system is 2.1 mW/W under 2.1 μW mid-infrared input. Both the up-converter and the up-conversion system are under background-limited infrared performance regime below 120 K. Taking shot noise as the main source of system noise, the CIUP system displays a higher detectivity than previous semiconductor up-converters at similar wavelengths, and thus possesses greater potential for future large-scale IR detection and imaging applications.

  17. Semiconductor-based photoelectrochemical water splitting at the limit of very wide depletion region

    SciTech Connect

    Liu, Mingzhao; Lyons, John L.; Yan, Danhua H.; Hybertsen, Mark S.

    2015-11-23

    In semiconductor-based photoelectrochemical (PEC) water splitting, carrier separation and delivery largely relies on the depletion region formed at the semiconductor/water interface. As a Schottky junction device, the trade-off between photon collection and minority carrier delivery remains a persistent obstacle for maximizing the performance of a water splitting photoelectrode. Here, it is demonstrated that the PEC water splitting efficiency for an n-SrTiO3 (n-STO) photoanode is improved very significantly despite its weak indirect band gap optical absorption (α < 10⁴ cm⁻¹), by widening the depletion region through engineering its doping density and profile. Graded doped n-SrTiO3 photoanodes are fabricated with their bulk heavily doped with oxygen vacancies but their surface lightly doped over a tunable depth of a few hundred nanometers, through a simple low temperature re-oxidation technique. The graded doping profile widens the depletion region to over 500 nm, thus leading to very efficient charge carrier separation and high quantum efficiency (>70%) for the weak indirect transition. As a result, this simultaneous optimization of the light absorption, minority carrier (hole) delivery, and majority carrier (electron) transport by means of a graded doping architecture may be useful for other indirect band gap photocatalysts that suffer from a similar problem of weak optical absorption.

  18. Potential for spin-based information processing in a thin-film molecular semiconductor

    NASA Astrophysics Data System (ADS)

    Warner, Marc; Din, Salahud; Tupitsyn, Igor S.; Morley, Gavin W.; Stoneham, A. Marshall; Gardener, Jules A.; Wu, Zhenlin; Fisher, Andrew J.; Heutz, Sandrine; Kay, Christopher W. M.; Aeppli, Gabriel

    2013-11-01

    Organic semiconductors are studied intensively for applications in electronics and optics, and even spin-based information technology, or spintronics. Fundamental quantities in spintronics are the population relaxation time (T1) and the phase memory time (T2): T1 measures the lifetime of a classical bit, in this case embodied by a spin oriented either parallel or antiparallel to an external magnetic field, and T2 measures the corresponding lifetime of a quantum bit, encoded in the phase of the quantum state. Here we establish that these times are surprisingly long for a common, low-cost and chemically modifiable organic semiconductor, the blue pigment copper phthalocyanine, in easily processed thin-film form of the type used for device fabrication. At 5K, a temperature reachable using inexpensive closed-cycle refrigerators, T1 and T2 are respectively 59ms and 2.6μs, and at 80K, which is just above the boiling point of liquid nitrogen, they are respectively 10μs and 1μs, demonstrating that the performance of thin-film copper phthalocyanine is superior to that of single-molecule magnets over the same temperature range. T2 is more than two orders of magnitude greater than the duration of the spin manipulation pulses, which suggests that copper phthalocyanine holds promise for quantum information processing, and the long T1 indicates possibilities for medium-term storage of classical bits in all-organic devices on plastic substrates.

  19. TOPICAL REVIEW: Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths

    NASA Astrophysics Data System (ADS)

    Bonanni, A.

    2007-09-01

    This review summarizes the state-of-the-art in the search for room temperature ferromagnetic semiconductors based on transition-metal- and rare-earth-doped nitrides. The major methods of synthesis are reported, together with an overview of the magnetic, structural, electrical and optical characterization of the materials systems, where available. The controversial experimental results concerning the actual value of the apparent Curie temperature in magnetically doped nitrides are highlighted, the inadequacy of standard characterization methods alone and the necessity of a possibly exhaustive structural investigation of the systems are proven and underlined. Furthermore, the dependence on the fabrication parameters of the magnetic ions incorporation into the semiconductor matrix is discussed, with special attention to the fundamental concepts of solubility limit and spinodal decomposition. It is argued that high-temperature ferromagnetic features in magnetically doped nitrides result from the presence of nanoscale regions containing a high concentration of the magnetic constituents. Various functionalities of these multicomponent systems are listed. Moreover, we give an extensive overview on the properties of single magnetic-impurity states in the nitride host. The understanding of this limit is crucial when considering the most recent suggestions for the control of the magnetic ion distribution—and consequently of the magnetic response—through the Fermi level engineering as well as to indicate roads for achieving high-temperature ferromagnetism in the systems containing a uniform distribution of magnetic ions.

  20. Optical arbitrary waveform generation based on multi-wavelength semiconductor fiber ring laser

    NASA Astrophysics Data System (ADS)

    Li, Peili; Ma, Xiaolu; Shi, Weihua; Xu, Enming

    2017-09-01

    A new scheme of generating optical arbitrary waveforms based on multi-wavelength semiconductor fiber ring laser (SFRL) is proposed. In this novel scheme, a wide and flat optical frequency comb (OFC) is provided directly by multi-wavelength SFRL, whose central frequency and comb spacing are tunable. OFC generation, de-multiplexing, amplitude and phase modulation, and multiplexing are implementing in an intensity and phase tunable comb filter, as induces the merits of high spectral coherence, satisfactory waveform control and low system loss. By using the mode couple theory and the transfer matrix method, the theoretical model of the scheme is established. The impacts of amplitude control, phase control, number of spectral line, and injection current of semiconductor optical amplifier (SOA) on the waveform similarity are studied using the theoretical model. The results show that, amplitude control and phase control error should be smaller than 1% and 0.64% respectively to achieve high similarity. The similarity of the waveform is improved with the increase of the number of spectral line. When the injection current of SOA is in a certain range, the optical arbitrary waveform reaches a high similarity.

  1. Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

    SciTech Connect

    Zhao, Xiaolong; He, Yongning Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting; Chen, Liang; Liu, Jinliang; Zhang, Zhongbing; Ouyang, Xiaoping

    2016-04-25

    The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 10{sup 13} Ω cm due to the compensation of the donor defects (V{sub O}) and acceptor defects (V{sub Zn} and O{sub i}) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

  2. Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors.

    PubMed

    Vitiello, Miriam S; Coquillat, Dominique; Viti, Leonardo; Ercolani, Daniele; Teppe, Frederic; Pitanti, Alessandro; Beltram, Fabio; Sorba, Lucia; Knap, Wojciech; Tredicucci, Alessandro

    2012-01-11

    The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source-drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 × 10(-9) W/(Hz)(1/2) at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipixel arrays, make these devices highly competitive as a future solution for terahertz detection.

  3. Frequency tunable optoelectronic oscillator based on a directly modulated DFB semiconductor laser under optical injection.

    PubMed

    Wang, Peng; Xiong, Jintian; Zhang, Tingting; Chen, Dalei; Xiang, Peng; Zheng, Jilin; Zhang, Yunshan; Li, Ruoming; Huang, Long; Pu, Tao; Chen, Xiangfei

    2015-08-10

    A frequency tunable optoelectronic oscillator based on a directly modulated distributed-feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. Through optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency can enable the loop oscillation with a RF threshold gain of less than 20 dB. The DFB laser is a commercial semiconductor laser with a package of 10 GHz, and its packaging limitation can be overcome by optical injection. In our scheme, neither a high-speed external modulator nor an electrical bandpass filter is required, making the system simple and low-cost. Microwave signals with a frequency tuning range from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers. The phase noise of the generated 9.75 GHz microwave signal is measured to be -104.8 dBc/Hz @ 10 kHz frequency offset.

  4. Chaotic communication in radio-over-fiber transmission based on optoelectronic feedback semiconductor lasers.

    PubMed

    Lin, Fan-Yi; Tsai, Meng-Chiao

    2007-01-22

    Performance of chaotic communication in radio-over-fiber (ROF) transmission based on optoelectronic feedback semiconductor lasers is studied numerically. The chaotic carrier is generated by optoelectronic feedback semiconductor lasers, where chaotic communication is realized by synchronizing a receiver laser with a transmitter laser. Transmission quality of different message encoding schemes, including additive chaos modulation (ACM) and on-off shift keying (OOSK), are investigated and compared. In this study, the dispersion and nonlinearity effects in the fiber transmission module and the amplified spontaneous emission noise from the optical amplifiers are considered. In the wireless channel, effects of additive white Gaussian noise, multipath, and path loss are included. To quantitatively study the performance of this chaotic communication system in the ROF transmission, bit-error-rates (BER) of different transmission lengths, message bit-rates, and signal-to-noise ratios are studied. The optimal launched power and message strength that minimize the BER while assuring effective communication security are discussed. While the ACM scheme is shown to perform better in a fiber only configuration, the OOSK scheme shows better immunity to the random effects and waveform distortions presented in the wireless channel.

  5. Investigation of laser radar systems based on mid-infrared semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Rybaltowski, Adam

    This dissertation deals with the possibility of utilizing mid-infrared semiconductor lasers in systems of optical remote sensing with range resolution, called laser radar or lidar. The main subject investigated in this dissertation is two-fold: firstly, an analysis of the signal-to-noise ratio (SNR) and related maximum sensing range calculations in this type of lidar based on available system components, and---secondly---improvements in the Random-Modulation Continuous-Wave (RM-CW) lidar technique to better utilize available mid-infrared semiconductor lasers. As far as the SNR analysis is concerned, an appropriate framework has been constructed to analyze post-demodulation noise in mid-infrared direct-detection RM-CW lidar. It is based on a generalization of the Wiener-Khintchine theorem; noise is assumed to be additive, stationary, and have an arbitrary power spectrum. This is in contrast to the SNR analysis in the literature on this subject, which is inadequate for mid-infrared RM-CW lidar as it only considers Poissonian fluctuations of the number of detected photons. In addition to regular SNR analysis, the framework derived in this dissertation allows treatment of singularities such as demodulation with an unbalanced sequence in 1/f noise. To calculate maximum lidar sensing range, the following detection limits have been considered: signal shot noise, background blackbody radiation shot noise based on the Background-Limited Photodetection (BLIP) detectivity limit, and minimum-size detector noise given by diffraction-limited focusing. The latter is found to be of greatest practical interest. Furthermore, a lidar figure of merit has been introduced, and all quantities related to lidar performance and its detection limits have been presented graphically. Since pseudo-random sequences discussed in the literature have been found highly non-optimal for most applications of RM-CW lidar, a framework for the construction of new pseudo-random sequences of desired

  6. An HEMT-Based Cryogenic Charge Amplifier for Sub-kelvin Semiconductor Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Phipps, A.; Sadoulet, B.; Juillard, A.; Jin, Y.

    2016-07-01

    We present the design and noise performance of a fully cryogenic (T=4 K) high-electron mobility transistor (HEMT)-based charge amplifier for readout of sub-kelvin semiconductor radiation detectors. The amplifier is being developed for use in direct detection dark matter searches such as the cryogenic dark matter search and will allow these experiments to probe weakly interacting massive particle masses below 10 GeV/c^2 while retaining background discrimination. The amplifier dissipates ≈ 1 mW of power and provides an open loop voltage gain of several hundreds. The measured noise performance is better than that of JFET-based charge amplifiers and is dominated by the noise of the input HEMT. An optimal filter calculation using the measured closed loop noise and typical detector characteristics predicts a charge resolution of σ _q=106 eV (35 electrons) for leakage currents below 4 × 10^{-15} A.

  7. Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

    NASA Technical Reports Server (NTRS)

    Kolokolov, K.; Li, J.; Ning, C. Z.; Larrabee, D. C.; Tang, J.; Khodaparast, G.; Kono, J.; Sasa, S.; Inoue, M.; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

  8. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier.

    PubMed

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-27

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing.

  9. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier

    PubMed Central

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing. PMID:26813252

  10. Low-noise III-V metasurface based semiconductor vortex laser and rotational Doppler velocimetry

    NASA Astrophysics Data System (ADS)

    Seghilani, Mohamed; Chomet, Baptiste; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Beaudoin, Gregoire; Sagnes, Isabelle; Lalanne, Philippe; Garnache, Arnaud

    2017-03-01

    We demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis.24 We use a first order phase perturbation to introduce a weak orbital anisotropy, based on a dielectric metasurface and non-linear laser dynamics, allowing selecting vortex handedness. Moreover, similarly to linear Doppler Shift, light carrying orbital angular momentum L, scattered by a rotating object at angular velocity, experiences a rotational Doppler shift L. We show that this fundamental light matter interaction can be detected exploiting self-mixing in a vortex laser under Doppler-shifted optical feedback, with quantum noise-limited light detection.25 This will allow us to combine a velocity sensor with optical tweezers for micro-manipulation applications, with high performances, simplicity and compactness. Such high performance laser opens the path to widespread new photonic applications.

  11. Sensitivity of intrinsic mode functions of Lorenz system to initial values based on EMD method

    NASA Astrophysics Data System (ADS)

    Zou, Ming-Wei; Feng, Guo-lin; Gao, Xin-Quan

    2006-06-01

    Extreme sensitivity to initial values is an intrinsic character of chaotic systems. The evolution of a chaotic system has a spatiotemporal structure containing quasi-periodic changes of different spatiotemporal scales. This paper uses an empirical mode decomposition (EMD) method to decompose and compare the evolution of the time-dependent evolutions of the x-component of the Lorenz system. The results indicate that the sensitivity of intrinsic mode function (IMF) component is dependent on initial values, which provides some scientific evidence for the possibility of long-range climatic prediction.

  12. Quantitative biomarkers of colonic dysplasia based on intrinsic second-harmonic generation signal

    NASA Astrophysics Data System (ADS)

    Zhuo, Shuangmu; Zhu, Xiaoqin; Wu, Guizhu; Chen, Jianxin; Xie, Shusen

    2011-12-01

    Most colorectal cancers arise from dysplastic lesions, such as adenomatous polyps, and these lesions are difficult to be detected by the current endoscopic screening approaches. Here, we present the use of an intrinsic second-harmonic generation (SHG) signal as a novel means to differentiate between normal and dysplastic human colonic tissues. We find that the SHG signal can quantitatively identify collagen change associated with colonic dysplasia that is indiscernible by conventional pathologic techniques. By comparing normal with dysplastic mucosa, there were significant differences in collagen density and collagen fiber direction, providing substantial potential to become quantitative intrinsic biomarkers for in vivo clinical diagnosis of colonic dysplasia.

  13. Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles

    SciTech Connect

    Kan, E.; Xiang, H.; Yang, J.; Whangbo, M. H.

    2009-06-01

    Semiconductor magnetic tunnel junctions (MTJs), composed of diluted magnetic semiconductors (DMSs) sandwiching a semiconductor barrier, have potential applications in spintronics but their development has been slow due to the difficulty of controlling the magnetism of DMSs. In terms of density functional calculations for model semiconductor MTJs, (Zn,Co)O/ZnO/(Zn,Co)O and (Ga,Mn)N/GaN/(Ga,Mn)N, we show that the magnetic coupling between the transition metal ions in each DMS electrode of such semiconductor MTJs can be switched from ferromagnetic to antiferromagnetic, or vice versa, under the application of external electric field across the junctions. Our results suggest a possible avenue for the application of semiconductor MTJs.

  14. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  15. Semiconductor polymer-based rf MEMS and its applications to microwave systems

    NASA Astrophysics Data System (ADS)

    Varadan, Vijay K.; Jose, K. A.; Vinoy, K. J.; Varadan, Vasundara V.

    2000-06-01

    During the past decade, several new fabrication techniques have evolved which helped popularize micro-electromechanical systems (MEMS), and numerous novel devices have been reported in diverse areas of engineering and science. One such area is microwave and millimeter wave systems. MEMS technology for microwave applications should solve many intriguing problems of high frequency technology for wireless communications. The recent and dramatic developments of personal communication devices forced the market to acquire miniaturized efficient devices, which is possible only by the development of RF MEMS. Semiconductor- polymer based sensor use silicon use silicon or compound semiconductors as inorganic parts with sensitive polymers as insulating, semiconducting or conductive materials. Organic thin film transistor has also been fabricated using this concept. These devices may allow control circuitry to be integrated with 2D or 3D MEMS. Interdigital type RF-MEMS can be designed and fabricated with Interdigital Electrodes (IDE) deposited on either polymer or an inorganic material such as Barium Strontium Titanate (BST). In the case of polymer-based device, we study the capacitance change and calibrate it for desired sensing application. In the inorganic case, we make use of the change in dielectric properties of BST as a function of DC bias. IDE will act like a RF filter and oscillator just like the comb-type RF MEMS devices. These polymeric based devices can be integrated with organic thin film transistors. RF switches, tuners and filters are some of the initial applications of RF MEMS although many others are still under development. In this paper we present the design and development of few devices such as phase shifters, switches and IDT capacitors. It is observed that, dielectric constant of BST thin film changes by more than 50 percent with an applied bias voltage of 25 V dc, which could therefore be easily implemented in RF switch.

  16. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

    SciTech Connect

    Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

    2003-12-01

    The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

  17. Semiconductor-based superlens for subwavelength resolution below the diffraction limit at extreme ultraviolet frequencies

    NASA Astrophysics Data System (ADS)

    Vincenti, M. A.; D'Orazio, A.; Cappeddu, M. G.; Akozbek, Neset; Bloemer, M. J.; Scalora, M.

    2009-05-01

    We theoretically demonstrate negative refraction and subwavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like response of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and superguiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallodielectric photonic band gap structures. The exploitation of this basic property in semiconductors raises the possibility of yet-untapped applications in the UV and soft x-ray ranges.

  18. Extracting Intrinsic Functional Networks with Feature-Based Group Independent Component Analysis

    ERIC Educational Resources Information Center

    Calhoun, Vince D.; Allen, Elena

    2013-01-01

    There is increasing use of functional imaging data to understand the macro-connectome of the human brain. Of particular interest is the structure and function of intrinsic networks (regions exhibiting temporally coherent activity both at rest and while a task is being performed), which account for a significant portion of the variance in…

  19. Extracting Intrinsic Functional Networks with Feature-Based Group Independent Component Analysis

    ERIC Educational Resources Information Center

    Calhoun, Vince D.; Allen, Elena

    2013-01-01

    There is increasing use of functional imaging data to understand the macro-connectome of the human brain. Of particular interest is the structure and function of intrinsic networks (regions exhibiting temporally coherent activity both at rest and while a task is being performed), which account for a significant portion of the variance in…

  20. Protein intrinsic disorder-based liquid-liquid phase transitions in biological systems: Complex coacervates and membrane-less organelles.

    PubMed

    Uversky, Vladimir N

    2017-01-01

    It is clear now that eukaryotic cells contain numerous membrane-less organelles, many of which are formed in response to changes in the cellular environment. Being typically liquid in nature, many of these organelles can be described as products of the reversible and highly controlled liquid-liquid phase transitions in biological systems. Many of these membrane-less organelles are complex coacervates containing (almost invariantly) intrinsically disordered proteins and often nucleic acids. It seems that the lack of stable structure in major proteinaceous constituents of these organelles is crucial for the formation of phase-separated droplets. This review considers several biologically relevant liquid-liquid phase transitions, introduces some general features attributed to intrinsically disordered proteins, represents several illustrative examples of intrinsic disorder-based phase separation, and provides some reasons for the abundance of intrinsically disordered proteins in organelles formed as a result of biological liquid-liquid phase transitions. Copyright © 2016 Elsevier B.V. All rights reserved.

  1. Light-emitting diodes based on n-ZnO nano-wires and p-type organic semiconductors

    NASA Astrophysics Data System (ADS)

    Willander, M.; Wadeasa, A.; Klason, P.; Yang, Lili; Lubana Beegum, S.; Raja, S.; Zhao, Q. X.; Nur, O.

    2008-02-01

    After our recent successful demonstration of high brightness white light emitting diodes (HB-LEDs) based on high temperature grown n-ZnO nanowires on different p-type semiconductors, we present here LEDs fabricated on n-ZnO nano-wires and p-type organic semiconductors. By employing a low temperature chemical growth (<= 90 °C) approach for ZnO synthesis combined together with organic p-type semiconductors, we demonstrate high quality LEDs fabricated on a variety of different substrates. The substrates include transparent glass, plastic, and conventional Si. Different multi-layers of p-type organic semiconductors with or without electron blocking layers have been demonstrated and characterized. The investigated p-type organic semiconductors include PEDOT:PSS, which was used as a anode in combination with other p-type polymers. Some of the heterojunction diodes also contain an electron blocking polymer sandwiched between the p-type polymer and the n-ZnO nano-wire. The insertion of electron blocking layer is necessary to engineer the device for the desired emission. Structural and electrical results will be presented. The preliminary I-V characteristics of the organic-inorganic hybrid heterojunction diodes show good rectifying properties. Finally we also present our findings on the origin of the green luminescence band which is responsible of the white light emission in ZnO is discussed.

  2. Influences of semiconductor laser on fibre-optic distributed disturbance sensor based on Mach-Zehnder interferometer

    NASA Astrophysics Data System (ADS)

    Liang, Sheng; Zhang, Chun-Xi; Lin, Bo; Lin, Wen-Tai; Li, Qin; Zhong, Xiang; Li, Li-Jing

    2010-12-01

    This paper investigates the influences of a semiconductor laser with narrow linewidth on a fibre-optic distributed disturbance sensor based on Mach-Zehnder interferometer. It establishes an effective numerical model to describe the noises and linewidth of a semiconductor laser, taking into account their correlations. Simulation shows that frequency noise has great influences on location errors and their relationship is numerically investigated. Accordingly, there is need to determine the linewidth of the laser less than a threshold and obtain the least location errors. Furthermore, experiments are performed by a sensor prototype using three semiconductor lasers with different linewidths, respectively, with polarization maintaining optical fibres and couplers to eliminate the polarization induced noises and fading. The agreement of simulation with experimental results means that the proposed numerical model can make a comprehensive description of the noise behaviour of a semiconductor laser. The conclusion is useful for choosing a laser source for fibre-optic distributed disturbance sensor to achieve optimized location accuracy. What is more, the proposed numerical model can be widely used for analysing influences of semiconductor lasers on other sensing, communication and optical signal processing systems.

  3. Characterization of TiO2-based semiconductors for photocatalysis by electrochemical impedance spectroscopy

    NASA Astrophysics Data System (ADS)

    Ângelo, Joana; Magalhães, Pedro; Andrade, Luísa; Mendes, Adélio

    2016-11-01

    The photocatalytic activity of a commercial titanium dioxide (P25) and of an in-house prepared P25/graphene composite is assessed according to standard ISO 22197-1:2007. The photoactivity performances of bare and composite TiO2-based materials were further studied by electrochemical impedance spectroscopy (EIS) technique to better understand the function of the graphene in the composite. EIS experiments were performed using a three-electrode configuration, which allows obtaining more detailed information about the complex charge transfer phenomena at the semiconductor/electrolyte interface. The Randles equivalent circuit was selected as the most suitable for modelling the present photocatalysts. The use of the graphene composite allows a more effective charge separation with lower charge transfer resistance and less e-/h+ recombination on the composite photocatalyst, reflected in the higher values of NO conversion.

  4. Simple and compact tunable semiconductor lasers based on novel half-wave coupler

    NASA Astrophysics Data System (ADS)

    He, Jian-Jun; Xiong, Xiaohai; Meng, Jianjun; Wu, Lin; Zhang, Sen; Liao, Xiaolu; Zou, Li

    2015-02-01

    Widely tunable semiconductor lasers based on a novel half-wave coupler are presented. They have been implemented in the form of half-wave coupled V-cavity and ring-FP cavities. By using the novel half-wave coupler, single-mode lasing with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is demonstrated. The full-band tuning of 50 channels with 100GHz spacing is realized by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin box TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, easy wavelength control and direct modulation allow the tunable lasers to be used in low-cost access and datacenter networks, as well as in portable devices for spectroscopic analysis.

  5. An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors.

    PubMed

    Wu, Fu-Peng; Un, Hio-Ieng; Li, Yongxi; Hu, Hailiang; Yuan, Yi; Yang, Bin; Xiao, Kai; Chen, Wei; Wang, Jie-Yu; Jiang, Zuo-Quan; Pei, Jian; Liao, Liang-Sheng

    2017-09-05

    A new electron-deficient unit with fused 5-heterocyclic ring was developed by replacing a cyclopenta-1,3-diene from electron-rich donor indacenodithiophene (IDT) with cyclohepta-4,6-diene-1,3-diimde unit. The imide bridging endows BBI with fixed planar configuration and both low the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbit (LUMO) energy levels. Organic field-effect transistors (OFETs) based on BBI polymers exhibit electron mobility up to 0.34 cm2 V-1 s-1, which indicates that the BBI is a promising n-type semiconductor for optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Model-based non-destructive investigation methods in semiconductor industry

    NASA Astrophysics Data System (ADS)

    Bilski, B.; Paz, V. Ferreras; Frenner, K.; Osten, W.

    2013-05-01

    Scatterometry is an investigation method that is gaining in importance in semiconductor industry. As an optical method it has distinct advantages that its competitor-methods do not possess: the ability for a quick and non-destructive measurement of fine features fabricated by modern generations of lithography machines. Scatterometry is very distinct from other measurement techniques also in this respect that it is a model-based method. As such it relies heavily on simulation and is essentially solving an inverse problem. In a forward optical measurement an imaging system processes the object information losing some fraction of information in the process. The measurement process in scatterometry follows the same pattern. The measurement result however is now compared against multiple simulated direct problems. The best fit between the simulation and the measurement is assumed to reconstruct the measured object.

  7. Knowledge-based software system for fast yield loss detection in a semiconductor fab

    NASA Astrophysics Data System (ADS)

    Martin Santamaria, Victorino; Recio, Miguel; Merino, Miguel A.; Moreno, Julian; Fernandez, Almudena; Gonzalez, Gerardo; Sanchez, Guillermo; Barrios, Luis J.; del Castillo, Maria D.; Lemus, Lissette; Gonzalez, Angel L.

    1997-09-01

    The comparative analysis of process machines in terms of yield related metrics (such as probe and E-Test data, process and particle data,. ..) is a source of a great deal of information for yield improvement. With this aim we published on SPIE's Microelectronic Manufacturing an Advanced Software System to detect machine-related yield limitors using a comparative analysis. This paper presents the natural expansion of that Software System by converting it into a more knowledge-based tool for fast yield loss detection on a semiconductor fab. The new System performs, in an automatic mode, the comparison among machines for every single step selected in the fabrication routing. The detection of statistically significative differences among machines at every step is performed using algorithms that incorporate the overall analysts experience on our fab. The output of the System allows a fast detection and reaction to yield issues, mainly to those that are still on the initial or baseline stages.

  8. Hybrid chaos-based communication system consisting of three chaotic semiconductor ring lasers.

    PubMed

    Li, Nianqiang; Pan, Wei; Xiang, Shuiying; Luo, Bin; Yan, Lianshan; Zou, Xihua

    2013-03-01

    We report on the realization of a hybrid chaos-based communication scheme using three chaotic semiconductor ring lasers (SRLs). In this scheme, two slave SRLs (S-SRLs) are identically driven by a master SRL (M-SRL) subject to delayed optical feedback. Under proper conditions, the S-SRLs are completely synchronized with each other due to the symmetric operation, and they are also synchronized with the M-SRL through the injection-locking effect. The results also show that a message encrypted through chaos shift keying at the M-SRL end can be successfully decrypted by the two S-SRLs, while the two uncoupled S-SRLs allow for dual-channel chaos communication when both counterpropagating modes of one S-SRL are encoded with a message.

  9. Ultrafast multifunctional all-optical logic gates based on single semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Dong, Jianji; Zhang, Xinliang; Fu, Songnian; Wang, Yang; Huang, Dexiu

    2007-11-01

    We propose and demonstrate 40Gb/s multifunctional all-optical logic gates based on single semiconductor optical amplifier (SOA) and a blue shifted optical bandpass filter (OBF), suitable for both return-to-zero (RZ) and nonreturn-to-zero (NRZ) format. The logic functions NOT, NOR and OR of RZ format are realized at the OBF detuning of -0.15nm, - 0.22nm, and -0.44nm, respectively. The logic functions NOT and NOR of NRZ format are realized at the OBF detuning of -0.24nm. The measured ER is around 7dB and Q factor is over 6. Our scheme has the potential advantages of multilogic functions, simple structure, and high tolerance to input pulsewidth.

  10. Synchronized 4 × 12 GHz hybrid harmonically mode-locked semiconductor laser based on AWG.

    PubMed

    Liu, S; Lu, D; Zhang, R; Zhao, L; Wang, W; Broeke, R; Ji, C

    2016-05-02

    We report a monolithically integrated synchronized four wavelength channel mode-locked semiconductor laser chip based on arrayed waveguide grating and fabricated in the InP material system. Device fabrication was completed in a multiproject wafer foundry run on the Joint European Platform for Photonic Integration of Components and Circuits. The integrated photonic chip demonstrated 5th harmonic electrical hybrid mode-locking operation with four 400 GHz spacing wavelength channels and synchronized to a 12.7 GHz RF clock, for nearly transform-limited optical pulse trains from a single output waveguide. A low timing jitter of 0.349 ps, and RF frequency locking range of ~50 MHz were also achieved.

  11. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting.

    PubMed

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-07-12

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis.

  12. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-07-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis.

  13. Quantitative analysis of uranium in aqueous solutions using a semiconductor laser-based spectroscopic method.

    PubMed

    Cho, Hye-Ryun; Jung, Euo Chang; Cha, Wansik; Song, Kyuseok

    2013-05-07

    A simple analytical method based on the simultaneous measurement of the luminescence of hexavalent uranium ions (U(VI)) and the Raman scattering of water, was investigated for determining the concentration of U(VI) in aqueous solutions. Both spectra were measured using a cw semiconductor laser beam at a center wavelength of 405 nm. The empirical calibration curve for the quantitative analysis of U(VI) was obtained by measuring the ratio of the luminescence intensity of U(VI) at 519 nm to the Raman scattering intensity of water at 469 nm. The limit of detection (LOD) in the parts per billion range and a dynamic range from the LOD up to several hundred parts per million were achieved. The concentration of uranium in groundwater determined by this method is in good agreement with the results determined by kinetic phosphorescence analysis and inductively coupled plasma mass spectrometry.

  14. Ballistic thermal transport properties at low temperatures in semiconductor nanowires-based heterojunctions

    NASA Astrophysics Data System (ADS)

    Yu, Xia; Xie, Zhong-Xiang; Liu, Jun-Hun; Chen, Qiao; Li, Ke-Min; Zhang, Yong

    2016-04-01

    In this paper, we study ballistic thermal transport properties at low temperatures in semiconductor nanowires-based heterojunctions under hard-wall boundary conditions (HWBCs) and stress-free boundary conditions (SFBCs). Here, the numerical calculations for the asymmetric heterojunction (ASHJ) and symmetric heterojunction (SHJ) are done. When SFBCs are employed, the transmission coefficient exhibits different behaviors between ASHJ and SHJ especially at low frequency, but when HWBCs are employed, the transmission coefficient displays similar smooth platforms in both heterojunctions. In low temperature limit, the quantized thermal conductance can be observed in SHJ under SFBCs regardless of the structural details. However, this quantization cannot be observed in ASHJ under SFBCs, and the thermal conductance is strongly sensitive to the transverse width ratio rather than the slant angle. With increasing the transverse width ratio, the thermal conductance in both heterojunctions gradually increases especially, and such the increasing degree is more evident at higher temperatures. A brief analysis of these results is given.

  15. Numerical characterization of InP-based quantum dot semiconductor optical amplifier.

    PubMed

    Nawwar, Omnia M; Emara, Ahmed; Aly, Moustafa H; Okaz, Ali M

    2016-12-10

    This paper is devoted to the development of a steady-state behavior of a quantum dot-semiconductor optical amplifier (QD-SOA). The investigated performance characteristics cover a wide range that includes material gain coefficient, spatial distribution of the occupation probabilities, fiber to fiber gain, gain spectrum as a function of the bias current, relaxation time, and capture time. A set of traveling-wave equations is used to model the signal and spontaneous photons along the device active region. The obtained results indicate a high gain that reaches 34 dB for an InAs/InGaAsP/InP-based QD-SOA, with a corresponding device length of 4 mm. The obtained signal-to-noise ratio is larger than 75 dB for all input powers without using an output filter.

  16. All-optical flip-flop based on vertical cavity semiconductor optical amplifiers.

    PubMed

    Song, Deqiang; Gauss, Veronica; Zhang, Haijiang; Gross, Matthias; Wen, Pengyue; Esener, Sadik

    2007-10-15

    We report the operation of an all-optical set-reset (SR) flip-flop based on vertical cavity semiconductor optical amplifiers (VCSOAs). This flip-flop is cascadable, has low optical switching power (~10 microW), and has the potential to be integrated on a small footprint (~100 microm(2)). The flip-flop is composed of two cross-coupled electrically pumped VCSOA inverters and uses the principles of cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics to achieve flip-flop functionality. We believe that, when integrated on chip, this type of all-optical flip-flop opens new prospects for implementing all-optical fast memories and timing regeneration circuits.

  17. Development and Electrochemical Investigations of an EIS- (Electrolyte-Insulator-Semiconductor) based Biosensor for Cyanide Detection

    PubMed Central

    Turek, Monika; Ketterer, Lothar; Claβen, Melanie; Berndt, Heinz K.; Elbers, Gereon; Krüger, Peter; Keusgen, Michael; Schöning, Michael J.

    2007-01-01

    A cyanide biosensor based on a pH-sensitive p-doped electrolyte-insulator-semiconductor (EIS) structure with an immobilised enzyme (cyanidase) is realised at the laboratory scale. The immobilisation of the cyanidase is performed in two distinct steps: first, the covalent coupling of cyanidase to an N-hydroxysuccinimide- (NHS) activated Sepharose™ gel and then, the physical entrapment of NHS-activated Sepharose™ with the immobilised cyanidase in a dialysis membrane onto the EIS structure. The immobilisation of the cyanidase to the NHS-activated Sepharose™ is studied by means of gel electrophoresis measurements and investigations using an ammonia- (NH3) selective electrode. For the electrochemical characterisation of the cyanide biosensor, capacitance/voltage and constant capacitance measurements, respectively, have been carried out. A differential measurement procedure is presented to evaluate the cyanide concentration-dependent biosensor signals.

  18. Solid-state semiconductor optical cryocooler based on CdS nanobelts.

    PubMed

    Li, Dehui; Zhang, Jun; Wang, Xinjiang; Huang, Baoling; Xiong, Qihua

    2014-08-13

    We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from 290 K under a 3.8 mW 514 nm and a 4.4 mW 532 nm pumping, respectively. In contrast, a laser heating effect has been observed pumped by 502 and 488 nm lasers. Theoretical analysis based on the general static heat conduction module in the Ansys program package is conducted, which agrees well with the experimental results. Our investigations demonstrate the laser cooling capability of an external thermal load, suggesting the applications of II-VI semiconductors in all-solid-state optical cryocoolers.

  19. All-optical sampling based on quantum-dot semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wu, Chen; Wang, Yongjun; Wang, Lina

    2016-11-01

    In recent years, the all-optical signal processing system has become a hot research field of optical communication. This paper focused on the basic research of quantum-dot (QD) semiconductor optical amplifier (SOA) and studied its practical application to all-optical sampling. A multi-level dynamic physical model of QD-SOA is established, and its ultrafast dynamic characteristics are studied through theoretical and simulation research. For further study, an all-optical sampling scheme based on the nonlinear polarization rotation (NPR) effect of QD-SOA is also proposed. This paper analyzed the characteristics of optical switch window and investigated the influence of different control light pulses on switch performance. The presented optical sampling method has an important role in promoting the improvement of all-optical signal processing technology.

  20. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    NASA Astrophysics Data System (ADS)

    Shen, Haoting

    conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance

  1. Photodetectors Based on Two-Dimensional Layer-Structured Hybrid Lead Iodide Perovskite Semiconductors.

    PubMed

    Zhou, Jiachen; Chu, Yingli; Huang, Jia

    2016-10-05

    Hybrid lead iodide perovskite semiconductors have attracted intense research interests recently because of their easy fabrication processes and high power conversion efficiencies in photovoltaic applications. Layer-structured materials have interesting properties such as quantum confinement effect and tunable band gap due to the unique two-dimensional crystalline structures. ⟨100⟩-oriented layer-structured perovskite materials are inherited from three-dimensional ABX3 perovskite materials with a generalized formula of (RNH3)2(CH3NH3)n-1MnX3n+1, and adopt the Ruddlesden-Popper type crystalline structure. Here we report the synthesis and investigation of three layer-structured perovskite materials with different layer numbers: (C4H9NH3)2PbI4 (n = 1, one-layered perovskite), (C4H9NH3)2(CH3NH3)Pb2I7 (n = 2, two-layered perovskite) and (C4H9NH3)2(CH3NH3)2Pb3I10 (n = 3, three-layered perovskite). Their photoelectronic properties were investigated in related to their molecular structures. Photodetectors based on these two-dimensional (2D) layer-structured perovskite materials showed tunable photoresponse with short response time in milliseconds. The photodetectors based on three-layered perovskite showed better performances than those of the other two devices, in terms of output current, responsivity, Ilight/Idark ratio, and response time, because of its smaller optical band gap and more condensed microstructure comparing the other two materials. These results revealed the relationship between the molecular structures, film microstructures and the photoresponse properties of 2D layer-structured hybrid perovskites, and demonstrated their potentials as flexible, functional, and tunable semiconductors in optoelectronic applications, by taking advantage of their tunable quantum well molecular structure.

  2. Fast-response humidity-sensing films based on methylene blue aggregates formed on nanoporous semiconductor films

    NASA Astrophysics Data System (ADS)

    Ishizaki, Ryota; Katoh, Ryuzi

    2016-05-01

    We prepared fast-response colorimetric humidity-sensing (vapochromic) films based on methylene blue adsorption onto nanoporous semiconductor (TiO2, Al2O3) films. Color changes caused by changes of humidity could be easily identified visually. A characteristic feature of the vapochromic films was their fast response to changes of humidity. We found that the response began to occur within 10 ms. The response was rapid because all the methylene blue molecules attached to the nanoporous semiconductor surface were directly exposed to the environment. We also deduced that the color changes were caused by structural changes of the methylene blue aggregates on the surface.

  3. Semiconductor detectors with proximity signal readout

    SciTech Connect

    Asztalos, Stephen J.

    2014-01-30

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  4. Mechanical signals at the base of a rat vibrissa: the effect of intrinsic vibrissa curvature and implications for tactile exploration

    PubMed Central

    Quist, Brian W.

    2012-01-01

    Rats actively tap and sweep their large mystacial vibrissae (whiskers) against objects to tactually explore their surroundings. When a vibrissa makes contact with an object, it bends, and this bending generates forces and bending moments at the vibrissa base. Researchers have only recently begun to quantify these mechanical variables. The present study quantifies the forces and bending moments at the vibrissa base with a quasi-static model of vibrissa deflection. The model was validated with experiments on real vibrissae. Initial simulations demonstrated that almost all vibrissa-object collisions during natural behavior will occur with the concave side of the vibrissa facing the object, and we therefore paid particular attention to the role of the vibrissa's intrinsic curvature in shaping the forces at the base. Both simulations and experiments showed that vibrissae with larger intrinsic curvatures will generate larger axial forces. Simulations also demonstrated that the range of forces and moments at the vibrissal base vary over approximately three orders of magnitude, depending on the location along the vibrissa at which object contact is made. Both simulations and experiments demonstrated that collisions in which the concave side of the vibrissa faces the object generate longer-duration contacts and larger net forces than collisions with the convex side. These results suggest that the orientation of the vibrissa's intrinsic curvature on the mystacial pad may increase forces during object contact and provide increased sensitivity to detailed surface features. PMID:22298834

  5. Semiconductor quantum dots as Förster resonance energy transfer donors for intracellularly-based biosensors

    NASA Astrophysics Data System (ADS)

    Field, Lauren D.; Walper, Scott A.; Susumu, Kimihiro; Oh, Eunkeu; Medintz, Igor L.; Delehanty, James B.

    2017-02-01

    Förster resonance energy transfer (FRET)-based assemblies currently comprise a significant portion of intracellularly based sensors. Although extremely useful, the fluorescent protein pairs typically utilized in such sensors are still plagued by many photophysical issues including significant direct acceptor excitation, small changes in FRET efficiency, and limited photostability. Luminescent semiconductor nanocrystals or quantum dots (QDs) are characterized by many unique optical properties including size-tunable photoluminescence, broad excitation profiles coupled to narrow emission profiles, and resistance to photobleaching, which can cumulatively overcome many of the issues associated with use of fluorescent protein FRET donors. Utilizing QDs for intracellular FRET-based sensing still requires significant development in many areas including materials optimization, bioconjugation, cellular delivery and assay design and implementation. We are currently developing several QD-based FRET sensors for various intracellular applications. These include sensors targeting intracellular proteolytic activity along with those based on theranostic nanodevices for monitoring drug release. The protease sensor is based on a unique design where an intracellularly expressed fluorescent acceptor protein substrate assembles onto a QD donor following microinjection, forming an active complex that can be monitored in live cells over time. In the theranostic configuration, the QD is conjugated to a carrier protein-drug analogue complex to visualize real-time intracellular release of the drug from its carrier in response to an external stimulus. The focus of this talk will be on the design, properties, photophysical characterization and cellular application of these sensor constructs.

  6. [Medical professionals on the subject of their core values: the importance of practice-based stories and intrinsic motivation].

    PubMed

    Witman, Yolande; van den Kerkhof, Peter C M; Braat, Didi D M

    2013-01-01

    In the current system for guaranteeing quality of care, emphasis is placed firmly on external control of professionals. We looked for a way to appeal to the intrinsic motivation of medical professionals and to discover what they mean by 'good work'. This was achieved with the aid of reflective sessions using the toolkit 'Good Work': in four sessions three different groups of medical professionals (medical department chairs, residents and interns) from a Dutch university hospital reflected on the topics 'excellence', 'moral responsibility' and 'personal engagement'. The participants exchanged practice-based stories during the sessions. The most important theme was moral responsibility, with its accompanying dilemmas. The sessions gave rise to feelings of mutual acknowledgement, recognition, inspiration and motivation. Sharing meaningful practice-based stories can be considered as a 'moment of learning', strengthening professional identity and stimulating intrinsic motivation. More space for this form of reflection might restore the balance with external control systems.

  7. Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.

    PubMed

    Baeg, Kang-Jun; Caironi, Mario; Noh, Yong-Young

    2013-08-21

    For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been struggling to meet the requirements for mass-produced electronics and optoelectronics applications despite their great potential. In the case of logic integrated circuits (ICs), which constitute the focus of this Progress Report, the main limitations have been represented by the need of suitable functional inks, mainly high-mobility printable semiconductors and low sintering temperature conducting inks, and evoluted printing tools capable of higher resolution, registration and uniformity than needed in the conventional graphic arts printing sector. Solution-processable polymeric semiconductors are the best candidates to fulfill the requirements for printed logic ICs on flexible substrates, due to their superior processability, ease of tuning of their rheology parameters, and mechanical properties. One of the strongest limitations has been mainly represented by the low charge carrier mobility (μ) achievable with polymeric, organic field-effect transistors (OFETs). However, recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon (a-Si). Interestingly these values were achieved thanks to the design and synthesis of donor-acceptor copolymers, showing limited degree of order when processed in thin films and therefore fostering further studies on the reason leading to such improved charge

  8. Modeling photoinduced fluorescence enhancement in semiconductor nanocrystal arrays

    NASA Astrophysics Data System (ADS)

    Maenosono, Shinya

    2003-07-01

    Photoinduced fluorescence enhancement (PFE) in semiconductor nanocrystal (NC) arrays is modeled based on the rate equations for ground-state, excited-state and photoionized NCs in the array. The photoionization process is broken down into fast and slow ionization processes, which are expected to relate to blinking and darkening phenomena, respectively. Consequently, PFE behavior is found to change drastically, as it depends on both the intrinsic properties of NCs, and on external conditions, such as surface-capping molecules and atmosphere.

  9. Diagnostics of gear faults based on EMD and automatic selection of intrinsic mode functions

    NASA Astrophysics Data System (ADS)

    Ricci, Roberto; Pennacchi, Paolo

    2011-04-01

    Signal processing is an important tool for diagnostics of mechanical systems. Many different techniques are available to process experimental signals, among others: FFT, wavelet transform, cepstrum, demodulation analysis, second order ciclostationarity analysis, etc. However, often hypothesis about data and computational efforts restrict the application of some techniques. In order to overcome these limitations, the empirical mode decomposition has been proposed. The outputs of this adaptive approach are the intrinsic mode functions that are treated with the Hilbert transform in order to obtain the Hilbert-Huang spectrum. Anyhow, the selection of the intrinsic mode functions used for the calculation of Hilbert-Huang spectrum is normally done on the basis of user's experience. On the contrary, in the paper a merit index is introduced that allows the automatic selection of the intrinsic mode functions that should be used. The effectiveness of the improvement is proven by the result of the experimental tests presented and performed on a test-rig equipped with a spiral bevel gearbox, whose high contact ratio made difficult to diagnose also serious damages of the gears. This kind of gearbox is normally never employed for benchmarking diagnostics techniques. By using the merit index, the defective gearbox is always univocally identified, also considering transient operating conditions.

  10. Imitation learning based on an intrinsic motivation mechanism for efficient coding.

    PubMed

    Triesch, Jochen

    2013-01-01

    A hypothesis regarding the development of imitation learning is presented that is rooted in intrinsic motivations. It is derived from a recently proposed form of intrinsically motivated learning (IML) for efficient coding in active perception, wherein an agent learns to perform actions with its sense organs to facilitate efficient encoding of the sensory data. To this end, actions of the sense organs that improve the encoding of the sensory data trigger an internally generated reinforcement signal. Here it is argued that the same IML mechanism might also support the development of imitation when general actions beyond those of the sense organs are considered: The learner first observes a tutor performing a behavior and learns a model of the the behavior's sensory consequences. The learner then acts itself and receives an internally generated reinforcement signal reflecting how well the sensory consequences of its own behavior are encoded by the sensory model. Actions that are more similar to those of the tutor will lead to sensory signals that are easier to encode and produce a higher reinforcement signal. Through this, the learner's behavior is progressively tuned to make the sensory consequences of its actions match the learned sensory model. I discuss this mechanism in the context of human language acquisition and bird song learning where similar ideas have been proposed. The suggested mechanism also offers an account for the development of mirror neurons and makes a number of predictions. Overall, it establishes a connection between principles of efficient coding, intrinsic motivations and imitation.

  11. Spectrally selective solar absorber with sharp and temperature dependent cut-off based on semiconductor nanowire arrays

    NASA Astrophysics Data System (ADS)

    Wang, Yang; Zhou, Lin; Zheng, Qinghui; Lu, Hong; Gan, Qiaoqiang; Yu, Zongfu; Zhu, Jia

    2017-05-01

    Spectrally selective absorbers (SSA) with high selectivity of absorption and sharp cut-off between high absorptivity and low emissivity are critical for efficient solar energy conversion. Here, we report the semiconductor nanowire enabled SSA with not only high absorption selectivity but also temperature dependent sharp absorption cut-off. By taking advantage of the temperature dependent bandgap of semiconductors, we systematically demonstrate that the absorption cut-off profile of the semiconductor-nanowire-based SSA can be flexibly tuned, which is quite different from most of the other SSA reported so far. As an example, silicon nanowire based selective absorbers are fabricated, with the measured absorption efficiency above (below) bandgap ˜97% (15%) combined with an extremely sharp absorption cut-off (transition region ˜200 nm), the sharpest SSA demonstrated so far. The demonstrated semiconductor-nanowire-based SSA can enable a high solar thermal efficiency of ≳86% under a wide range of operating conditions, which would be competitive candidates for the concentrated solar energy utilizations.

  12. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  13. What if the Electrical Conductivity of Graphene Is Significantly Deteriorated for the Graphene-Semiconductor Composite-Based Photocatalysis?

    PubMed

    Weng, Bo; Xu, Yi-Jun

    2015-12-23

    The extraordinary electrical conductivity of graphene has been widely regarded as the bible in literature to explain the activity enhancement of graphene-semiconductor composite photocatalysts. However, from the viewpoint of an entire composite-based artificial photosynthetic system, the significant matter of photocatalytic performance of graphene-semiconductor composite system is not just a simple and only issue of excellent electrical conductivity of graphene. Herein, the intentional design of melamine resin monomers functionalized three-dimensional (3D) graphene (donated as MRGO) with significantly deteriorated electrical conductivity enables us to independently focus on studying the geometry effect of MRGO on the photocatalytic performance of graphene-semiconductor composite. By coupling semiconductor CdS with graphene, including MRGO and reduced graphene oxide (RGO), it was found that the CdS-MRGO composites exhibit much higher visible light photoactivity than CdS-RGO composites although the electrical conductivity of MRGO is remarkably much lower than that of RGO. The comparison characterizations evidence that such photoactivity enhancement is predominantly attributed to the restacking-inhibited 3D architectural morphology of MRGO, by which the synergistic effects of boosted separation and transportation of photogenerated charge carriers and increased adsorption capacity can be achieved. Our work highlights that the significant matter of photocatalytic performance of graphene-semiconductor composite is not a simple issue on how to harness the electrical conductivity of graphene but the rational ensemble design of graphene-semiconductor composite, which includes the integrative optimization of geometrical and electrical factors of individual component and the interface composition.

  14. Intrinsic and metal-doped gallium oxide based high-temperature oxygen sensors for combustion processes

    NASA Astrophysics Data System (ADS)

    Rubio, Ernesto Javier

    films were evaluated as a function of W-content. The structural analyses indicate the formation of monoclinic beta-phase 2O3 in as-grown W-doped 2O3 films for all W-content. Thermally induced secondary phase (W-oxide) formation was observed after the annealing process. Chemical analysis demonstrates the increasing W atomic percentage in the films with increasing sputtering power, whereas the main metallic ionic species for the films are W6+ and Ga3+. Evidence of W interdiffusion due to the annealing process is presented, and the mechanism of diffusion is discussed. Surface morphology of the films is also discussed, and the transition to mesoporous surface is observed after annealing. Finally, the oxygen sensor performance evaluation demonstrated that the W-incorporated 2O3 exhibits improved response time compared to intrinsic 2O3 based oxygen sensors.

  15. Effective control on flat band voltage of epitaxial lanthanide oxide based metal oxide semiconductor capacitors by interfacial carbon

    NASA Astrophysics Data System (ADS)

    Laha, Apurba; Fissel, A.; Osten, H. J.

    2013-05-01

    Present work addresses the issue of flat band voltage instability engendered by the presence of large number of fixed charges and interface traps at and close to the interface of metal oxide semiconductor capacitors. We show that submonolayer of C incorporation onto Si surface prior to epitaxial lanthanide oxides (Ln2O3: Gd2O3, Nd2O3) deposition can significantly improve their electrical properties. Ultraviolet photoelectric spectroscopy shows that most of the intrinsic surface states that stem from the dangling bonds on Si surface disappear after passivation with C. The flat band voltage of Pt/Gd2O3/Si MOS capacitors can be tuned in a controlled manner by systematic incorporation of C onto Si surface, effectively at Gd2O3-Si interface.

  16. Process simulation of carbon-based nanostructures in next-generation semiconductor integrated elements

    NASA Astrophysics Data System (ADS)

    Zempo, Yasunari; Ohno, Takahisa

    2013-03-01

    The trend in semiconductor devices leads us to develop new materials such as CNT and graphene from the point of high electric conductivity, new CMOS channel and interconnect, and low-voltage operation. To realize the carbon-based nano device, we have established HPCI carbon-based nano structure material consortium with industries, universities and institutions, aiming for R&D of nano electric fabrication. Our research is oriented to process simulations of nano structure manufacturing for optimal process design, property analyses for comprehensive assessment of the device applications, and providing industry-friendly environment that combines first principles and other methods (semi-empirical and classical). To promote device manufacturing with the help of HPCI (K computer), PHASE is our key software for electronic structure calculations based on DFT using plane wave base, which is not only wide applicable to various materials, and involves analytical tools for dielectric response, vibrational analysis, STM simulation, etc. but also compatible to wide range of platforms from note PC to SC, with well optimized parallel computation. Some of applications will be presented together with the scalability on K computer such as SiC defects, graphene growth, and conductivity analysis

  17. Recent Advances in Inorganic Nanoparticle-Based NIR Luminescence Imaging: Semiconductor Nanoparticles and Lanthanide Nanoparticles.

    PubMed

    Kim, Dokyoon; Lee, Nohyun; Park, Yong Il; Hyeon, Taeghwan

    2017-01-18

    Several types of nanoparticle-based imaging probes have been developed to replace conventional luminescent probes. For luminescence imaging, near-infrared (NIR) probes are useful in that they allow deep tissue penetration and high spatial resolution as a result of reduced light absorption/scattering and negligible autofluorescence in biological media. They rely on either an anti-Stokes or a Stokes shift process to generate luminescence. For example, transition metal-doped semiconductor nanoparticles and lanthanide-doped inorganic nanoparticles have been demonstrated as anti-Stokes shift-based agents that absorb NIR light through two- or three-photon absorption process and upconversion process, respectively. On the other hand, quantum dots (QDs) and lanthanide-doped nanoparticles that emit in NIR-II range (∼1000 to ∼1350 nm) were suggested as promising Stokes shift-based imaging agents. In this topical review, we summarize and discuss the recent progress in the development of inorganic nanoparticle-based luminescence imaging probes working in NIR range.

  18. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit [Knoxville, TN

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  19. Mobility anisotropy of two-dimensional semiconductors

    NASA Astrophysics Data System (ADS)

    Lang, Haifeng; Zhang, Shuqing; Liu, Zhirong

    2016-12-01

    The carrier mobility of anisotropic two-dimensional semiconductors under longitudinal acoustic phonon scattering was theoretically studied using deformation potential theory. Based on the Boltzmann equation with the relaxation time approximation, an analytic formula of intrinsic anisotropic mobility was derived, showing that the influence of effective mass on mobility anisotropy is larger than those of deformation potential constant or elastic modulus. Parameters were collected for various anisotropic two-dimensional materials (black phosphorus, Hittorf's phosphorus, BC2N , MXene, TiS3, and GeCH3) to calculate their mobility anisotropy. It was revealed that the anisotropic ratio is overestimated by the previously described method.

  20. Bulk gallium nitride based electronic devices: Schottky diodes, Schottky-type ultraviolet photodetectors and metal-oxide-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Zhou, Yi

    Gallium Nitride (GaN) is one of most promising semiconductor materials for high power, high temperature and high frequency applications. Due to the lack of native substrates for homoepitaxial growth, GaN electronic devices have been conventionally fabricated on epitaxial GaN layers grown on foreign substrates, mostly sapphire. This scheme complicates the fabrication process and compromises the device performance due to the large amount of native defects within the heteroepitaxial layer. In order to fabricate devices with improved performance and simplified fabrication processes, it is desirable to utilize high quality bulk GaN substrates. Recent developments in Hydride Vapor Phase Epitaxy (HVPE) technology have enabled the successful growth of free-standing GaN wafers with very low dislocation densities. This dissertation reports some developments in the device fabrication, performance and simulation based on bulk GaN substrates. We have fabricated vertical geometry Schottky diodes with a full backside ohmic contact using a bulk GaN substrate. The absence of the sapphire substrate, improved ohmic contact scheme and the vertical transport mode greatly enhance the forward current conduction of the bulk GaN Schottky diode. The device also displays a high reverse breakdown voltage and ultrafast reverse recovery characteristics. The low dislocation density of the substrate allows the fabrication of Schottky-type ultraviolet photodetectors with ultralow dark currents. The large band gap of GaN provides the intrinsic "visible blindness" of the UV photodetector. The device displays a reasonably high responsivity and a good linearity of photocurrent with UV irradiance. We have also fabricated MOS capacitors using a thermally oxidized bulk GaN substrate. The thermal gallium oxide is characterized and its oxidation mechanism and etching process are explored. The thermal grown Ga2O 3/GaN interface displays a relatively lower interface density of state as compared to the

  1. Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1-xO

    NASA Astrophysics Data System (ADS)

    Hou, Yaonan; Mei, Zengxia; Du, Xiaolong

    2014-07-01

    It is indispensable to develop wide-band-gap based ultraviolet (UV) photodetectors (PDs), which are one of the basic building blocks of solid state UV optoelectronic devices. In the last two decades, we have witnessed the renaissance of ZnO as a wide-band-gap semiconductor and an enormous development of ZnO-based UV PDs as a result of its superb optical and electronic properties. Since the first demonstration, a great variety of UV PDs based on ZnO and its related materials have been proposed and demonstrated. These PDs, with diverse device geometries, exhibit either high performance or multiple functions, reflecting a state-of-the-art technology of UV optoelectronics. In this review, we study the latest progress of UV PDs made on ZnO and MgxZn1-xO, which is a representative alloy of ZnO for band-gap engineering techniques. The discussion focuses on the device performance and the behind device physics according to the architecture of UV PDs.

  2. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    PubMed Central

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  3. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    NASA Astrophysics Data System (ADS)

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-05-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities.

  4. Metal-oxide-semiconductor based gas sensors: screening, preparation, and integration.

    PubMed

    Zhang, Jian; Qin, Ziyu; Zeng, Dawen; Xie, Changsheng

    2017-03-01

    Metal-oxide-semiconductor (MOS) based gas sensors have been considered a promising candidate for gas detection over the past few years. However, the sensing properties of MOS-based gas sensors also need to be further enhanced to satisfy the higher requirements for specific applications, such as medical diagnosis based on human breath, gas detection in harsh environments, etc. In these fields, excellent selectivity, low power consumption, a fast response/recovery rate, low humidity dependence and a low limit of detection concentration should be fulfilled simultaneously, which pose great challenges to the MOS-based gas sensors. Recently, in order to improve the sensing performances of MOS-based gas sensors, more and more researchers have carried out extensive research from theory to practice. For a similar purpose, on the basis of the whole fabrication process of gas sensors, this review gives a presentation of the important role of screening and the recent developments in high throughput screening. Subsequently, together with the sensing mechanism, the factors influencing the sensing properties of MOSs involved in material preparation processes were also discussed in detail. It was concluded that the sensing properties of MOSs not only depend on the morphological structure (particle size, morphology, pore size, etc.), but also rely on the defect structure and heterointerface structure (grain boundaries, heterointerfaces, defect concentrations, etc.). Therefore, the material-sensor integration was also introduced to maintain the structural stability in the sensor fabrication process, ensuring the sensing stability of MOS-based gas sensors. Finally, the perspectives of the MOS-based gas sensors in the aspects of fundamental research and the improvements in the sensing properties are pointed out.

  5. Terrylenediimide-Based Intrinsic Theranostic Nanomedicines with High Photothermal Conversion Efficiency for Photoacoustic Imaging-Guided Cancer Therapy.

    PubMed

    Zhang, Shaobo; Guo, Weisheng; Wei, Jie; Li, Chan; Liang, Xing-Jie; Yin, Meizhen

    2017-04-25

    Activatable theranostic nanomedicines involved in photothermal therapy (PTT) have received constant attention as promising alternatives to traditional therapies in clinic. However, the theranostic nanomedicines widely suffer from instability and complicated nanostructures, which hamper potential clinical applications. Herein, we demonstrated a terrylenediimide (TDI)-poly(acrylic acid) (TPA)-based nanomedicine (TNM) platform used as an intrinsic theranostic agent. As an exploratory paradigm in seeking biomedical applications, TDI was modified with poly(acrylic acid)s (PAAs), resulting in eight-armed, star-like TPAs composed of an outside hydrophilic PAA corona and an inner hydrophobic TDI core. TNMs were readily fabricated via spontaneous self-assembly. Without additional vehicle and cargo, the as-prepared TNMs possessed a robust nanostructure and high photothermal conversion efficiency up to approximately 41%. The intrinsic theranostic properties of TNMs for use in photoacoustic (PA) imaging by a multispectral optoacoustic tomography system and in mediating photoinduced tumor ablation were intensely explored. Our results suggested that the TNMs could be successfully exploited as intrinsic theranostic agents for PA imaging-guided efficient tumor PTT. Thus, these TNMs hold great potential for (pre)clinical translational development.

  6. An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires.

    PubMed

    Baig, Sarwat A; Boland, Jessica L; Damry, Djamshid A; Tan, H Hoe; Jagadish, Chennupati; Joyce, Hannah J; Johnston, Michael B

    2017-04-12

    Progress in the terahertz (THz) region of the electromagnetic spectrum is undergoing major advances, with advanced THz sources and detectors being developed at a rapid pace. Yet, ultrafast THz communication is still to be realized, owing to the lack of practical and effective THz modulators. Here, we present a novel ultrafast active THz polarization modulator based on GaAs semiconductor nanowires arranged in a wire-grid configuration. We utilize an optical pump-terahertz probe spectroscopy system and vary the polarization of the optical pump beam to demonstrate ultrafast THz modulation with a switching time of less than 5 ps and a modulation depth of -8 dB. We achieve an extinction of over 13% and a dynamic range of -9 dB, comparable to microsecond-switchable graphene- and metamaterial-based THz modulators, and surpassing the performance of optically switchable carbon nanotube THz polarizers. We show a broad bandwidth for THz modulation between 0.1 and 4 THz. Thus, this work presents the first THz modulator which combines not only a large modulation depth but also a broad bandwidth and picosecond time resolution for THz intensity and phase modulation, making it an ideal candidate for ultrafast THz communication.

  7. A 6 GW nanosecond solid-state generator based on semiconductor opening switch

    NASA Astrophysics Data System (ADS)

    Gusev, A. I.; Pedos, M. S.; Rukin, S. N.; Timoshenkov, S. P.; Tsyranov, S. N.

    2015-11-01

    In this paper, a nanosecond all solid-state generator providing peak power of up to 6 GW, output voltage of 500-900 kV, pulse length (full width at half maximum) of ˜7 ns across external loads of 40-100 Ω, and pulse repetition frequency up to 1 kHz in burst operation mode is described. The output pulse is generated by a semiconductor opening switch (SOS). A new SOS pumping circuit based on a double forming line (DFL) is proposed and its implementation described. As compared with a lumped capacitors-based pumping circuit, the DFL allows minimization of the inductance and stray capacitance of the reverse pumping circuit, and thus, an increase in the SOS cutoff current amplitude and generator output peak power as a whole. The pumping circuit provides a reverse current increasing through the SOS up to 14 kA within ˜12 ns. The SOS cuts off the current in ˜2 ns; the current cutoff rate reaches 7 kA/ns. The SOS braking power (the product of peak voltage and cutoff current) for an external load above 100 Ω is 13 GW.

  8. Defect chemistry and defect engineering of TiO2-based semiconductors for solar energy conversion.

    PubMed

    Nowotny, Janusz; Alim, Mohammad Abdul; Bak, Tadeusz; Idris, Mohammad Asri; Ionescu, Mihail; Prince, Kathryn; Sahdan, Mohd Zainizan; Sopian, Kamaruzzaman; Mat Teridi, Mohd Asri; Sigmund, Wolfgang

    2015-12-07

    This tutorial review considers defect chemistry of TiO2 and its solid solutions as well as defect-related properties associated with solar-to-chemical energy conversion, such as Fermi level, bandgap, charge transport and surface active sites. Defect disorder is discussed in terms of defect reactions and the related charge compensation. Defect equilibria are used in derivation of defect diagrams showing the effect of oxygen activity and temperature on the concentration of both ionic and electronic defects. These defect diagrams may be used for imposition of desired semiconducting properties that are needed to maximize the performance of TiO2-based photoelectrodes for the generation of solar hydrogen fuel using photo electrochemical cells (PECs) and photocatalysts for water purification. The performance of the TiO2-based semiconductors is considered in terms of the key performance-related properties (KPPs) that are defect related. It is shown that defect engineering may be applied for optimization of the KPPs in order to achieve optimum performance.

  9. Feature analysis and classification of manufacturing signatures based on semiconductor wafermaps

    SciTech Connect

    Tobin, K.W.; Gleason, S.S.; Karnowski, T.P.; Cohen, S.L.

    1997-02-01

    Automated tools for semiconductor wafer defect analysis are becoming more necessary as device densities and wafer sizes continue to increase. Trends towards larger wafer formats and smaller critical dimensions have caused an exponential increase in the volume of defect data which must be analyzed and stored. To accommodate these changing factors, automatic analysis tools are required that can efficiently and robustly process the increasing amounts of data, and thus quickly characterize manufacturing processes and accelerate yield learning. During the first year of this cooperative research project between SEMATECH and the Oak Ridge National Laboratory, a robust methodology for segmenting signature events prior to feature analysis and classification was developed. Based on the results of this segmentation procedure, a feature measurement strategy has been designed based on interviews with process engineers coupled with the analysis of approximately 1500 electronic wafermap files. In this paper, the authors represent an automated procedure to rank and select relevant features for use with a fuzzy pair-wise classifier and give examples of the efficacy of the approach taken. Results of the feature selection process are given for two uniquely different types of class data to demonstrate a general improvement in classifier performance.

  10. Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics

    NASA Astrophysics Data System (ADS)

    Miyao, Masanobu; Sadoh, Taizoh

    2017-05-01

    Recent progress in the crystal growth of group-IV-based semiconductor-on-insulators is reviewed from physical and technological viewpoints. Liquid-phase growth based on SiGe-mixing-triggered rapid-melting growth enables formation of hybrid (100) (110) (111)-orientation Ge-on-insulator (GOI) structures, which show defect-free GOI with very high carrier mobility (˜1040 cm2 V-1 s-1). Additionally, SiGe mixed-crystals with laterally uniform composition were obtained by eliminating segregation phenomena during the melt-back process. Low-temperature solid-phase growth has been explored by combining this process with ion-beam irradiation, additional doping of group-IV elements, metal induced lateral crystallization with/without electric field, and metal-induced layer exchange crystallization. These efforts have enabled crystal growth on insulators below 400 °C, achieving high carrier mobility (160-320 cm2 V-1 s-1). Moreover, orientation-controlled SiGe and Ge films on insulators have been obtained below the softening temperatures of conventional plastic films (˜300 °C). Detailed characterization provides an understanding of physical phenomena behind these crystal growth techniques. Applying these methods when fabricating next-generation electronics is also discussed.

  11. A micromachined thermo-optical light modulator based on semiconductor-to-metal phase transition

    NASA Astrophysics Data System (ADS)

    Jiang, Lijun

    In this research, a micromachined thermo-optical light modulator was realized based on the semiconductor-to-metal phase transition of vanadium dioxide (VO2) thin film. VO2 undergoes a reversible phase transition at approximately 68°C, which is accompanied with drastic changes in its electrical and optical properties. The sharp electrical resistivity change can be as great as five orders. Optically, VO2 film will switch from a transparent semiconductor phase to a reflective metal phase upon the phase transition. The light modulator in this research exploits this phase transition related optical switching by using surface micromachined low-thermal-mass pixels to achieve good thermal isolations, which ensures that each pixel can be individually switched without cross talking. In operation, the pixel temperature was controlled by integrated resistor on each pixel or spatially addressed thermal radiation sources. Active VO2 thin film was synthesized by thermal oxidation of e-beam evaporated vanadium metal film. The oxidized film exhibits a phase transition at ˜65°C with a hysteresis of about 15°C. A transmittance switching from ˜90% to ˜30% in the near infrared and a reflectance switching from ˜50% to ˜15% in the visible have been achieved. The surface microstructure was studied and correlated to its optical properties. A study on the hysteresis loop reveals that the VO2 can be repetitively switched between the "on" and "off" states. The micromachined thermal isolation pixel was a bridge-like silicon dioxide platform suspended with narrow supporting legs. The pixel design was optimized with both thermal and optical simulations. The VO2 light modulator was fabricated by surface micromachining based on dry processing. Silicon dioxide was deposited on a polyimide sacrificial layer by PECVD and patterned to form the structural pixel. Vanadium film was e-beam evaporated and patterned with lift-off process. It was thermally oxidized into VO2 at 390°C. The thermal

  12. Determination of localized trap parameters in organic semiconductors using charge based deep level transient spectroscopy (Q-DLTS)

    NASA Astrophysics Data System (ADS)

    Nguyen, T. P.; Ip, J.; Gaudin, O.; Jackman, R. B.

    2004-07-01

    In organic light emitting diodes (OLEDs), localized traps within the band gap of the organic semiconductor play a fundamental role in the light emission process. Trapped charge carriers cannot recombine efficiently and therefore do not contribute to the emission. The determination of the trap parameters in the emitting layer is especially important in the evaluation of the efficiency of such devices. We have investigated the trap parameters in some organic semiconductors using the Charge-Based Deep Level Transient Spectroscopy (Q-DLTS) technique. Examples are given in poly(p phenylene vinylene) or PPV and 4, 4'-bis(4-dimethylaminostryryl) or DMASB, for which the trap level, the trap density, and the capture cross section were determined. In addition, it was possible to identify the carrier type (minority and majority) traps in these semiconductors. The results were compared with those obtained in similar materials by other techniques such as conventional DLTS, thermally stimulated currents (TSC), impedance measurements. Q-DLTS appears to be a powerful tool for studying defects in organic semiconductors.

  13. 3D radiative transfer of intrinsically polarized dust emission based on aligned aspherical grains

    NASA Astrophysics Data System (ADS)

    Bertrang, G. H.-M.; Wolf, S.

    2017-08-01

    (Sub-)millimetre observations of the polarized emission of aligned aspherical dust grains enable us to study the magnetic fields within protoplanetary disc. However, the interpretation of these observations is complex. One must consider the various effects that alter the measured polarized signal, such as the shape of dust grains, the efficiency of grain alignment, the magnetic field properties and the projection of the signal along the line of sight. We aim at analysing observations of the polarized dust emission by disentangling the effects on the polarization signal in the context of 3D radiative transfer simulations. For this purpose, we developed a code capable of simulating dust grain alignment of aspherical grains and intrinsical polarization of thermal dust emission. We find that the influence of thermal polarization and dust grain alignment on the polarized emission displayed as spatially resolved polarization map or as spectral energy distribution trace disc properties that are not traced in total (unpolarized) emission such as the magnetic field topology. The radiative transfer simulations presented in this work enable the 3D analysis of intrinsically polarized dust emission - observed with e.g. Atacama Large Millimeter/submillimeter Array (ALMA) - which is essential to constrain magnetic field properties.

  14. Intrinsic motivation factors based on the self-determinant theory for regular breast cancer screening.

    PubMed

    Jung, Su Mi; Jo, Heui-Sug

    2014-01-01

    The purpose of this study was to identify factors of intrinsic motivation that affect regular breast cancer screening and contribute to development of a program for strategies to improve effective breast cancer screening. Subjects were residing in South Korea Gangwon-Province and were female over 40 and under 69 years of age. For the investigation, the Intrinsic Motivation Inventory (IMI) was modified to the situation of cancer screening and was used to survey 905 inhabitants. Multinominal logistic regression analyses were conducted for regular breast cancer screening (RS), one-time breast cancer screening (OS) and non-breast cancer screening (NS). For statistical analysis, IBM SPSS 20.0 was utilized. The determinant factors between RS and NS were "perceived effort and choice" and "stress and strain" - internal motivations related to regular breast cancer screening. Also, determinant factors between RS and OS are "age" and "perceived effort and choice" for internal motivation related to cancer screening. To increase regular screening, strategies that address individual perceived effort and choice are recommended.

  15. The attachment and characterization of DNA probes on gallium arsenide-based semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Yang, Joonhyuk

    2007-12-01

    Immobilization of nucleic acid molecules on solid surfaces is the core of numerous important technologies in the genomics, disease diagnostics and biosensors applications. The architecture and density of immobilized probe molecules depend on the type of the solid surface on which they are anchored. Even though many different types of surfaces have been studied as substrates for deoxyribonucleic acid (DNA) attachment, the development of a new type of substrate, which is reproducible, stable, highly controlled and easily transferred to practical applications, is still needed. Recent studies have shown that As terminated GaAs-based semiconductors can be used as substrates for immobilized DNA layers. In this study, I aim to understand the attachment of nucleic acid onto the surfaces of As-terminated GaAs-based semiconductors and focus on improving the "brush-structure", which is essential for high quality of biochip based on a DNA layer. Attachment of 8-base and 100-base thiolated ssDNA layers on arsenic terminated GaAs(001) was achieved and characterized. The covalent bonds between the thiolated oligonucleotides with As atoms on the GaAs surface were investigated using x-ray photoelectron spectroscopy (XPS), and the surface morphology was obtained using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). In addition, I studied the effect of DNA length and the presence of a good solvent, such as water, on the oligonucleotides on a GaAs surface. I also investigated the effects of the thiol-based spacer and electrolyte concentration to improve the brush-like structure of the DNA layer. Finally, irradiation effects and AlGaAs resonators have been studied for the applications of DNA brush layer on GaAs as biosensor during the change of attachment probe DNA and hybridization to target DNA. For the 8-base thiolated ssDNA case, AFM results showed that the layer thickness was about ˜2.2 nm in dry mode and increased in wet mode. Replacement

  16. Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Woo, Alex C. (Technical Monitor)

    1999-01-01

    In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum

  17. Photocapacitive light sensor based on metal-YMnO3-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Bogusz, A.; Choudhary, O. S.; Skorupa, I.; Bürger, D.; Lawerenz, A.; Lei, Y.; Zeng, H.; Abendroth, B.; Stöcker, H.; Schmidt, O. G.; Schmidt, H.

    2016-02-01

    Technology of light sensors, due to the wide range of applications, is a dynamically developing branch of both science and industry. This work presents concept of photodetectors based on a metal-ferroelectric-insulator-semiconductor, a structure which has not been thoroughly explored in the field of photodetectors. Functionality of the presented light sensor exploits the effects of photocapacitive phenomena, ferroelectric polarization, and charge trapping. This is accomplished by an interplay between polarization alignment, subsequent charge distribution, and charge trapping processes under given illumination condition and gate voltage. Change of capacitance serves as a read out parameter indicating the wavelength and intensity of the illuminating light. The operational principle of the proposed photocapacitive light sensor is demonstrated in terms of capacitance-voltage and capacitance-time characteristics of an Al/YMnO3/SiNx/p-Si structure exposed to green, red, and near infrared light. Obtained results are discussed in terms of optical properties of YMnO3 and SiNx layers contributing to the performance of photodetectors. Presented concept of light sensing might serve as the basis for the development of more advanced photodetectors.

  18. Artificial Neuron Based on Integrated Semiconductor Quantum Dot Mode-Locked Lasers.

    PubMed

    Mesaritakis, Charis; Kapsalis, Alexandros; Bogris, Adonis; Syvridis, Dimitris

    2016-12-19

    Neuro-inspired implementations have attracted strong interest as a power efficient and robust alternative to the digital model of computation with a broad range of applications. Especially, neuro-mimetic systems able to produce and process spike-encoding schemes can offer merits like high noise-resiliency and increased computational efficiency. Towards this direction, integrated photonics can be an auspicious platform due to its multi-GHz bandwidth, its high wall-plug efficiency and the strong similarity of its dynamics under excitation with biological spiking neurons. Here, we propose an integrated all-optical neuron based on an InAs/InGaAs semiconductor quantum-dot passively mode-locked laser. The multi-band emission capabilities of these lasers allows, through waveband switching, the emulation of the excitation and inhibition modes of operation. Frequency-response effects, similar to biological neural circuits, are observed just as in a typical two-section excitable laser. The demonstrated optical building block can pave the way for high-speed photonic integrated systems able to address tasks ranging from pattern recognition to cognitive spectrum management and multi-sensory data processing.

  19. Artificial Neuron Based on Integrated Semiconductor Quantum Dot Mode-Locked Lasers

    PubMed Central

    Mesaritakis, Charis; Kapsalis, Alexandros; Bogris, Adonis; Syvridis, Dimitris

    2016-01-01

    Neuro-inspired implementations have attracted strong interest as a power efficient and robust alternative to the digital model of computation with a broad range of applications. Especially, neuro-mimetic systems able to produce and process spike-encoding schemes can offer merits like high noise-resiliency and increased computational efficiency. Towards this direction, integrated photonics can be an auspicious platform due to its multi-GHz bandwidth, its high wall-plug efficiency and the strong similarity of its dynamics under excitation with biological spiking neurons. Here, we propose an integrated all-optical neuron based on an InAs/InGaAs semiconductor quantum-dot passively mode-locked laser. The multi-band emission capabilities of these lasers allows, through waveband switching, the emulation of the excitation and inhibition modes of operation. Frequency-response effects, similar to biological neural circuits, are observed just as in a typical two-section excitable laser. The demonstrated optical building block can pave the way for high-speed photonic integrated systems able to address tasks ranging from pattern recognition to cognitive spectrum management and multi-sensory data processing. PMID:27991574

  20. PRECISION CLEANING OF SEMICONDUCTOR SURFACES USING CARBON DIOXIDE-BASED FLUIDS

    SciTech Connect

    J. RUBIN; L. SIVILS; A. BUSNAINA

    1999-07-01

    The Los Alamos National Laboratory, on behalf of the Hewlett-Packard Company, is conducting tests of a closed-loop CO{sub 2}-based supercritical fluid process, known as Supercritical CO{sub 2} Resist Remover (SCORR). We have shown that this treatment process is effective in removing hard-baked, ion-implanted photoresists, and appears to be fully compatible with metallization systems. We are now performing experiments on production wafers to assess not only photoresist removal, but also residual surface contamination due to particulate and trace metals. Dense-phase (liquid or supercritical) CO{sub 2}, since it is non-polar, acts like an organic solvent and therefore has an inherently high volubility for organic compounds such as oils and greases. Also, dense CO{sub 2} has a low-viscosity and a low dielectric constant. Finally, CO{sub 2} in the liquid and supercritical fluid states can solubilize metal completing agents and surfactants. This combination of properties has interesting implications for the removal not only of organic films, but also trace metals and inorganic particulate. In this paper we discuss the possibility of using CO{sub 2} as a precision-cleaning solvent, with particular emphasis on semiconductor surfaces.

  1. Semiconductor-based Multilayer Selective Solar Absorber for Unconcentrated Solar Thermal Energy Conversion.

    PubMed

    Thomas, Nathan H; Chen, Zhen; Fan, Shanhui; Minnich, Austin J

    2017-07-13

    Solar thermal energy conversion has attracted substantial renewed interest due to its applications in industrial heating, air conditioning, and electricity generation. Achieving stagnation temperatures exceeding 200 °C, pertinent to these technologies, with unconcentrated sunlight requires spectrally selective absorbers with exceptionally low emissivity in the thermal wavelength range and high visible absorptivity for the solar spectrum. In this Communication, we report a semiconductor-based multilayer selective absorber that exploits the sharp drop in optical absorption at the bandgap energy to achieve a measured absorptance of 76% at solar wavelengths and a low emittance of approximately 5% at thermal wavelengths. In field tests, we obtain a peak temperature of 225 °C, comparable to that achieved with state-of-the-art selective surfaces. With straightforward optimization to improve solar absorption, our work shows the potential for unconcentrated solar thermal systems to reach stagnation temperatures exceeding 300 °C, thereby eliminating the need for solar concentrators for mid-temperature solar applications such as supplying process heat.

  2. A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors

    NASA Astrophysics Data System (ADS)

    Chen, Chi-Le; Chen, Wei-Feng; Zhou, Lei; Wu, Wei-Jing; Xu, Miao; Wang, Lei; Peng, Jun-Biao

    2016-03-01

    In the application of the Lambert W function, the surface potential for amorphous oxide semiconductor thin-film transistors (AOS TFTs) under the subthreshold region is approximated by an asymptotic equation only considering the tail states. While the surface potential under the above-threshold region is approximated by another asymptotic equation only considering the free carriers. The intersection point between these two asymptotic equations represents the transition from the weak accumulation to the strong accumulation. Therefore, the gate voltage corresponding to the intersection point is defined as threshold voltage of AOS TFTs. As a result, an analytical expression for the threshold voltage is derived from this novel definition. It is shown that the threshold voltage achieved by the proposed physics-based model is agreeable with that extracted by the conventional linear extrapolation method. Furthermore, we find that the free charge per unit area in the channel starts increasing sharply from the threshold voltage point, where the concentration of the free carriers is a little larger than that of the localized carriers. The proposed model for the threshold voltage of AOS TFTs is not only physically meaningful but also mathematically convenient, so it is expected to be useful for characterizing and modeling AOS TFTs.

  3. Artificial Neuron Based on Integrated Semiconductor Quantum Dot Mode-Locked Lasers

    NASA Astrophysics Data System (ADS)

    Mesaritakis, Charis; Kapsalis, Alexandros; Bogris, Adonis; Syvridis, Dimitris

    2016-12-01

    Neuro-inspired implementations have attracted strong interest as a power efficient and robust alternative to the digital model of computation with a broad range of applications. Especially, neuro-mimetic systems able to produce and process spike-encoding schemes can offer merits like high noise-resiliency and increased computational efficiency. Towards this direction, integrated photonics can be an auspicious platform due to its multi-GHz bandwidth, its high wall-plug efficiency and the strong similarity of its dynamics under excitation with biological spiking neurons. Here, we propose an integrated all-optical neuron based on an InAs/InGaAs semiconductor quantum-dot passively mode-locked laser. The multi-band emission capabilities of these lasers allows, through waveband switching, the emulation of the excitation and inhibition modes of operation. Frequency-response effects, similar to biological neural circuits, are observed just as in a typical two-section excitable laser. The demonstrated optical building block can pave the way for high-speed photonic integrated systems able to address tasks ranging from pattern recognition to cognitive spectrum management and multi-sensory data processing.

  4. Effective coupled optoelectrical design method for fully infiltrated semiconductor nanowires based hybrid solar cells.

    PubMed

    Wu, Dan; Tang, Xiaohong; Wang, Kai; Li, Xianqiang

    2016-10-31

    We present a novel coupled design method that both optimizes light absorption and predicts electrical performance of fully infiltrated inorganic semiconductor nanowires (NWs) based hybrid solar cells (HSC). This method provides a thorough insight of hybrid photovoltaic process as a function of geometrical parameters of NWs. An active layer consisting of GaAs NWs as acceptor and poly(3-hexylthiophene-2,5-diyl) (P3HT) as donor were used as a design example. Absorption spectra features were studied by the evolution of the leaky modes and Fabry-Perot resonance with wavelength focusing firstly on the GaAs/air layer before extending to GaAs/P3HT hybrid active layer. The highest absorption efficiency reached 39% for the hybrid active layer of 2 μm thickness under AM 1.5G illumination. Combined with the optical absorption analysis, our method further codesigns the energy harvesting to predict electrical performance of HSC considering exciton dissociation efficiencies within both inorganic NWs and a polymeric shell of 20 nm thickness. The validity of the simulation model was also proved by the well agreement of the simulation results with the published experimental work indicating an effective guidance for future high performance HSC design.

  5. Band gaps by design: Tailoring ZnO based semiconductor alloy films

    NASA Astrophysics Data System (ADS)

    Che, Hui

    This dissertation presents the research on the synthesis of ZnO based ternary semiconductor alloy films with tailored band gaps and the studies in their structural and optical properties. MgxZn1-xO alloys expanded the band gaps from 3.20 eV to deeper UV region of 5.67 eV. While ZnSxO1-x reduced the band gaps into the visible region of 2.9 eV. The alloy films were grown via reactive sputtering deposition, which is a cost effective and environment-friendly technique. An analytical method was developed for accurately determining the band gaps of alloys via transmission spectroscopy. The structural inhomogeneity issues in the Mg xZn1-xO alloys were studied via Selective Resonant Raman Scattering. Urbach energy analysis and Raman spectral line width analysis indicated that structural defects and alloy composition fluctuations in the MgxZn1-xO alloy films are the dominant origins of the localized electronic tail states and the Raman line broadening. While the Raman line broadening due to the anharmonicity of the alloys is not significant. The achievement of ZnSxO1-x alloy films with reduced band gaps paved the way for further research on band gap engineering of ZnO in the visible region.

  6. Large anomalous Hall effect in a silicon-based magnetic semiconductor.

    PubMed

    Manyala, Ncholu; Sidis, Yvan; DiTusa, John F; Aeppli, Gabriel; Young, David P; Fisk, Zachary

    2004-04-01

    Magnetic semiconductors are attracting great interest because of their potential use for spintronics, a new technology that merges electronics with the manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology, and although their Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin-film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow-gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, which displays large magnetic-field effects on its electrical properties.

  7. Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter

    PubMed Central

    Sridhar, Manoj; Xu, Dongyan; Kang, Yuejun; Hmelo, Anthony B.; Feldman, Leonard C.; Li, Dongqing; Li, Deyu

    2008-01-01

    We report the detailed characterization of an ultrasensitive microfluidic device used to detect the translocation of small particles through a sensing microchannel. The device connects a fluidic circuit to the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET) and detects particles by monitoring the MOSFET drain current modulation instead of the modulation in the ionic current through the sensing channel. The minimum volume ratio of the particle to the sensing channel detected is 0.006%, which is about ten times smaller than the lowest detected volume ratio previously reported in the literature. This volume ratio is detected at a noise level of about 0.6% of the baseline MOSFET drain current, clearly showing the amplification effects from the fluidic circuits and the MOSFETs. We characterize the device sensitivity as a function of the MOSFET gate potential and show that its sensitivity is higher when the MOSFET is operating below its threshold gate voltage than when it is operating above the threshold voltage. In addition, we demonstrate that the device sensitivity linearly increases with the applied electrical bias across the fluidic circuit. Finally, we show that polystyrene beads and glass beads with similar sizes can be distinguished from each other based on their different translocation times, and the size distribution of microbeads can be obtained with accuracy comparable to that of direct scanning electron microscopy measurements. PMID:19479001

  8. Multi-immunosensors based on electrolite-insulator-semiconductor structures for determination of some herbicides

    NASA Astrophysics Data System (ADS)

    Starodub, Nickolaj F.; Starodub, Valentyna M.; Krivenchuk, Vladimir E.; Shapovalenko, Valentyna F.

    2002-02-01

    New type of the multi-immune sensor was elaborated. It is based on electrolyte-insulator-semiconductors structures and intended for determination of such herbicides as simazine, atrazine and 2,4-D. The specific antibodies were immobilized on nitrocellulose disks, which were placed in measuring cells. The analysis was fulfilled by sequential saturation of antibodies, left unbound after their exposure to native herbicide in investigated sample, with labelled herbicide. If horse radish peroxidase (HRP) was used as label the sensitivity of this multi-immune sensor was about 5 and 1.25 (mu) g/L for simazine and 2,4-D, respectively. At the changing of HRP by (beta) -glucose oxidase the sensitivity of analysis of these herbicides increased approximately in 5 times. The linear plots of the registered concentrations were in the range of 1,0-150,0 and 0,25-150,0 ng/mL for simazine and 2,4-D respectively. It was recommended to use the developed immune sensor for wide screening of herbicides in environment. The ways for increasing of its sensitivity were proposed.

  9. Semiconductor and carbon-based fluorescent nanodots: the need for consistency.

    PubMed

    Cayuela, A; Soriano, M L; Carrillo-Carrión, C; Valcárcel, M

    2016-01-25

    Fluorescent nanodots have become increasingly prevalent in a wide variety of applications with special interest in analytical and biomedical fields. The present overview focuses on three main aspects: (i) a systematic description and reasonable classification of the most relevant types of fluorescent nanodots according to their nature, quantum confinement and crystalline structure is provided, starting with a clear distinction between semiconductor and carbon-based dots (graphene quantum dots, carbon quantum dots and carbon nanodots). A new set of abbreviations and definitions for them to avoid contradictions found in literature is also proposed; (ii) a rational classification allows the establishment of clear-cut differences and similarities among them. From a basic point of view, the origins of the photoluminescence of the different nanodots are also established, which is a relevant contribution of this overview. Additionally, the most outstanding similarities and differences in a great variety of criteria (i.e. year of discovery, synthesis, the physico-chemical characteristics like structure, nature, shape, size, quantum confinement, toxicity and solubility, the optical characteristics including the quantum yield and lifetime, limitations, applications as well as the evolution of publications) are thoroughly outlined; and (iii) finally, the promising future of fluorescent nanodots in both analytical and biomedical fields is discussed using selected examples of relevant applications.

  10. Silicon-on-insulator-based complementary metal oxide semiconductor integrated optoelectronic platform for biomedical applications

    NASA Astrophysics Data System (ADS)

    Mujeeb-U-Rahman, Muhammad; Scherer, Axel

    2016-12-01

    Microscale optical devices enabled by wireless power harvesting and telemetry facilitate manipulation and testing of localized biological environments (e.g., neural recording and stimulation, targeted delivery to cancer cells). Design of integrated microsystems utilizing optical power harvesting and telemetry will enable complex in vivo applications like actuating a single nerve, without the difficult requirement of extreme optical focusing or use of nanoparticles. Silicon-on-insulator (SOI)-based platforms provide a very powerful architecture for such miniaturized platforms as these can be used to fabricate both optoelectronic and microelectronic devices on the same substrate. Near-infrared biomedical optics can be effectively utilized for optical power harvesting to generate optimal results compared with other methods (e.g., RF and acoustic) at submillimeter size scales intended for such designs. We present design and integration techniques of optical power harvesting structures with complementary metal oxide semiconductor platforms using SOI technologies along with monolithically integrated electronics. Such platforms can become the basis of optoelectronic biomedical systems including implants and lab-on-chip systems.

  11. Silicon-on-insulator-based complementary metal oxide semiconductor integrated optoelectronic platform for biomedical applications.

    PubMed

    Mujeeb-U-Rahman, Muhammad; Scherer, Axel

    2016-12-01

    Microscale optical devices enabled by wireless power harvesting and telemetry facilitate manipulation and testing of localized biological environments (e.g., neural recording and stimulation, targeted delivery to cancer cells). Design of integrated microsystems utilizing optical power harvesting and telemetry will enable complex in vivo applications like actuating a single nerve, without the difficult requirement of extreme optical focusing or use of nanoparticles. Silicon-on-insulator (SOI)-based platforms provide a very powerful architecture for such miniaturized platforms as these can be used to fabricate both optoelectronic and microelectronic devices on the same substrate. Near-infrared biomedical optics can be effectively utilized for optical power harvesting to generate optimal results compared with other methods (e.g., RF and acoustic) at submillimeter size scales intended for such designs. We present design and integration techniques of optical power harvesting structures with complementary metal oxide semiconductor platforms using SOI technologies along with monolithically integrated electronics. Such platforms can become the basis of optoelectronic biomedical systems including implants and lab-on-chip systems.

  12. All-solid-state repetitive semiconductor opening switch-based short pulse generator.

    PubMed

    Ding, Zhenjie; Hao, Qingsong; Hu, Long; Su, Jiancang; Liu, Guozhi

    2009-09-01

    The operating characteristics of a semiconductor opening switch (SOS) are determined by its pumping circuit parameters. SOS is still able to cut off the current when pumping current duration falls to the order of tens of nanoseconds and a short pulse forms simultaneously in the output load. An all-solid-state repetitive SOS-based short pulse generator (SPG100) with a three-level magnetic pulse compression unit was successfully constructed. The generator adopts magnetic pulse compression unit with metallic glass and ferrite cores, which compresses a 600 V, 10 mus primary pulse into short pulse with forward pumping current of 825 A, 60 ns and reverse pumping current of 1.3 kA, 30 ns. The current is sent to SOS in which the reverse pumping current is interrupted. The generator is capable of providing a pulse with the voltage of 120 kV and duration of 5-6 ns while output load being 125 Omega. The highest repetition rate is up to 1 kHz.

  13. Circular dichroism spectroscopy of complexes based on semiconductor quantum dots and chlorin e6 molecules

    NASA Astrophysics Data System (ADS)

    Kundelev, Evgeny V.; Orlova, Anna O.; Maslov, Vladimir G.; Baranov, Alexander V.; Fedorov, Anatoly V.

    2017-04-01

    Circular dichroism (CD) spectra of complexes based on ZnS:Mn/ZnS and CdSe/ZnS quantum dots (QDs) and chlorin e6 (Ce6) molecules in dimethyl sulfoxide (DMSO) and in aqueous solutions at different pH levels were investigated. The changes in CD spectra of Ce6 upon its bonding in complex with semiconductor QDs were analyzed. CD spectroscopy allowed us to obtain the CD spectrum of a luminescent Ce6 dimer and to identify a nonluminescent Ce6 aggregate, which is thought to be a tetramer. The dissymmetry factor of the tetramer is 40 times larger than that of the Ce6 monomer. The analysis of the obtained data showed that in complexes with QDs Ce6 can be either in the monomer form or in the form of a nonluminescent tetramer. The interaction of the relatively unstable luminescent Ce6 dimer with QDs leads to its partial monomerization and the formation of complexes with Ce6 in the monomer form. On the basis of time-dependent density functional theory calculations, we performed a geometry model of Ce6 dimer form with corresponding calculated absorption and CD spectra, which are in a qualitative agreement with the experimental data.

  14. Semiconductor-based Multilayer Selective Solar Absorber for Unconcentrated Solar Thermal Energy Conversion

    DOE PAGES

    Thomas, Nathan H.; Chen, Zhen; Fan, Shanhui; ...

    2017-07-13

    Solar thermal energy conversion has attracted substantial renewed interest due to its applications in industrial heating, air conditioning, and electricity generation. Achieving stagnation temperatures exceeding 200 °C, pertinent to these technologies, with unconcentrated sunlight requires spectrally selective absorbers with exceptionally low emissivity in the thermal wavelength range and high visible absorptivity for the solar spectrum. In this Communication, we then report a semiconductor-based multilayer selective absorber that exploits the sharp drop in optical absorption at the bandgap energy to achieve a measured absorptance of 76% at solar wavelengths and a low emittance of approximately 5% at thermal wavelengths. In fieldmore » tests, we obtain a peak temperature of 225 °C, comparable to that achieved with state-of-the-art selective surfaces. Furthemore, with straightforward optimization to improve solar absorption, our work shows the potential for unconcentrated solar thermal systems to reach stagnation temperatures exceeding 300 °C, thereby eliminating the need for solar concentrators for mid-temperature solar applications such as supplying process heat« less

  15. Quantitative optical biomarkers of lung cancer based intrinsic two-photon excited fluorescence signal

    NASA Astrophysics Data System (ADS)

    Li, Jingwen; Zhan, Zhenlin; Lin, Hongxin; Zuo, Ning; Zhu, Xiaoqin; Xie, Shusen; Chen, Jianxin; Zhuo, Shuangmu

    2016-10-01

    Alterations in the elastic fibers have been implicated in lung cancer. However, the label-free, microscopic imaging of elastic fibers in situ remains a major challenge. Here, we present the use of intrinsic two-photon excited fluorescence (TPEF) signal as a novel means for quantification of the elastic fibers in intact fresh human lung tissues. We obtained the TPEF images of elastic fibers from ex vivo the human lung tissues. We found that three features, including the elastic fibers area, the elastic fibers orientation, the elastic fibers structure, provide the quantitative identification of lung cancer and the direct visual cues for cancer versus non-cancer areas. These results suggest that the TPEF signal can be used as the label-free optical biomarkers for rapid clinical lung diagnosis and instant image-guided surgery.

  16. Intrinsic bioremediation of jet fuel contamination at George Air Force Base

    SciTech Connect

    Wilson, J.T.; Sewell, G.W.; Caron, D.; Doyle, G.; Miller, R.N.

    1995-12-31

    The rate of intrinsic bioremediation of BTEX compounds in groundwater from a spill of JP-4 jet fuel was estimated by comparing attenuation of the concentrations of the compounds along a flow path. Concentrations of the trimethylbenzenes (TMB) were used to correct for attenuation due to dilution. Analysis of core samples identified the depth interval in the aquifer that was occupied by the groundwater plume. A downhole flowmeter test identified the local hydraulic conductivity of the depth interval occupied by the plume. Time of travel between wells along the flowpath was calculated from the hydraulic gradient and hydraulic conductivity, assuming an effective porosity of 0.3. First-order rate constants were calculated from attenuation (corrected for dilution or dispersion) and the estimated residence time of groundwater between the wells.

  17. Methods of reducing low frequency cabin noise and sonically induced stresses, based on the intrinsic structural tuning concept

    NASA Technical Reports Server (NTRS)

    Sengupta, G.

    1977-01-01

    Control of low frequency interior noise has been difficult in all commercial and general aviation aircraft, since the existing sound attenuation techniques are less effective at these frequencies. Therefore low frequency cabin noise and sonically induced stresses can be reduced mainly by a proper design of the fuselage structure. For this purpose, a concept based on intrinsic tuning and damping of fuselage structural elements has been under development at Boeing for the past three years. This paper describes the results of some laboratory and field tests that were conducted for evaluation of the concept.

  18. Proton Conduction in a Phosphonate-Based Metal-Organic Framework Mediated by Intrinsic "Free Diffusion inside a Sphere".

    PubMed

    Pili, Simona; Argent, Stephen P; Morris, Christopher G; Rought, Peter; García-Sakai, Victoria; Silverwood, Ian P; Easun, Timothy L; Li, Ming; Warren, Mark R; Murray, Claire A; Tang, Chiu C; Yang, Sihai; Schröder, Martin

    2016-05-25

    Understanding the molecular mechanism of proton conduction is crucial for the design of new materials with improved conductivity. Quasi-elastic neutron scattering (QENS) has been used to probe the mechanism of proton diffusion within a new phosphonate-based metal-organic framework (MOF) material, MFM-500(Ni). QENS suggests that the proton conductivity (4.5 × 10(-4) S/cm at 98% relative humidity and 25 °C) of MFM-500(Ni) is mediated by intrinsic "free diffusion inside a sphere", representing the first example of such a mechanism observed in MOFs.

  19. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    NASA Astrophysics Data System (ADS)

    Hoidn, Oliver R.; Seidler, Gerald T.

    2015-08-01

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2-6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ˜20% quantum efficiency at 2.6 keV with ˜190 eV resolution and a 100 kHz maximum detection rate. The detector platform's useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  20. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers.

    PubMed

    Hoidn, Oliver R; Seidler, Gerald T

    2015-08-01

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2-6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform's useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  1. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    SciTech Connect

    Hoidn, Oliver R.; Seidler, Gerald T.

    2015-08-15

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  2. Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

  3. Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

    NASA Technical Reports Server (NTRS)

    Li, C.; Ban, H.; Lin, B.; Scripa, R. N.; Su, C.-H.; Lehoczky, S. L.

    2004-01-01

    The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

  4. A Next Generation Semiconductor Based Sequencing Approach for the Identification of Meat Species in DNA Mixtures

    PubMed Central

    Bertolini, Francesca; Ghionda, Marco Ciro; D’Alessandro, Enrico; Geraci, Claudia; Chiofalo, Vincenzo; Fontanesi, Luca

    2015-01-01

    The identification of the species of origin of meat and meat products is an important issue to prevent and detect frauds that might have economic, ethical and health implications. In this paper we evaluated the potential of the next generation semiconductor based sequencing technology (Ion Torrent Personal Genome Machine) for the identification of DNA from meat species (pig, horse, cattle, sheep, rabbit, chicken, turkey, pheasant, duck, goose and pigeon) as well as from human and rat in DNA mixtures through the sequencing of PCR products obtained from different couples of universal primers that amplify 12S and 16S rRNA mitochondrial DNA genes. Six libraries were produced including PCR products obtained separately from 13 species or from DNA mixtures containing DNA from all species or only avian or only mammalian species at equimolar concentration or at 1:10 or 1:50 ratios for pig and horse DNA. Sequencing obtained a total of 33,294,511 called nucleotides of which 29,109,688 with Q20 (87.43%) in a total of 215,944 reads. Different alignment algorithms were used to assign the species based on sequence data. Error rate calculated after confirmation of the obtained sequences by Sanger sequencing ranged from 0.0003 to 0.02 for the different species. Correlation about the number of reads per species between different libraries was high for mammalian species (0.97) and lower for avian species (0.70). PCR competition limited the efficiency of amplification and sequencing for avian species for some primer pairs. Detection of low level of pig and horse DNA was possible with reads obtained from different primer pairs. The sequencing of the products obtained from different universal PCR primers could be a useful strategy to overcome potential problems of amplification. Based on these results, the Ion Torrent technology can be applied for the identification of meat species in DNA mixtures. PMID:25923709

  5. A next generation semiconductor based sequencing approach for the identification of meat species in DNA mixtures.

    PubMed

    Bertolini, Francesca; Ghionda, Marco Ciro; D'Alessandro, Enrico; Geraci, Claudia; Chiofalo, Vincenzo; Fontanesi, Luca

    2015-01-01

    The identification of the species of origin of meat and meat products is an important issue to prevent and detect frauds that might have economic, ethical and health implications. In this paper we evaluated the potential of the next generation semiconductor based sequencing technology (Ion Torrent Personal Genome Machine) for the identification of DNA from meat species (pig, horse, cattle, sheep, rabbit, chicken, turkey, pheasant, duck, goose and pigeon) as well as from human and rat in DNA mixtures through the sequencing of PCR products obtained from different couples of universal primers that amplify 12S and 16S rRNA mitochondrial DNA genes. Six libraries were produced including PCR products obtained separately from 13 species or from DNA mixtures containing DNA from all species or only avian or only mammalian species at equimolar concentration or at 1:10 or 1:50 ratios for pig and horse DNA. Sequencing obtained a total of 33,294,511 called nucleotides of which 29,109,688 with Q20 (87.43%) in a total of 215,944 reads. Different alignment algorithms were used to assign the species based on sequence data. Error rate calculated after confirmation of the obtained sequences by Sanger sequencing ranged from 0.0003 to 0.02 for the different species. Correlation about the number of reads per species between different libraries was high for mammalian species (0.97) and lower for avian species (0.70). PCR competition limited the efficiency of amplification and sequencing for avian species for some primer pairs. Detection of low level of pig and horse DNA was possible with reads obtained from different primer pairs. The sequencing of the products obtained from different universal PCR primers could be a useful strategy to overcome potential problems of amplification. Based on these results, the Ion Torrent technology can be applied for the identification of meat species in DNA mixtures.

  6. A semiconductor-based, frequency-stabilized mode-locked laser using a phase modulator and an intracavity etalon.

    PubMed

    Davila-Rodriguez, Josue; Ozdur, Ibrahim; Williams, Charles; Delfyett, Peter J

    2010-12-15

    We report a frequency-stabilized semiconductor-based mode-locked laser that uses a phase modulator and an intracavity Fabry-Perot etalon for both active mode-locking and optical frequency stabilization. A twofold multiplication of the repetition frequency of the laser is inherently obtained in the process. The residual timing jitter of the mode-locked pulse train is 13 fs (1 Hz to 100 MHz), measured after regenerative frequency division of the photodetected pulse train.

  7. Features of the spectral dependences of transmittance of organic semiconductors based on tert-butyl substituted lutetium phthalocyanine molecules

    SciTech Connect

    Belogorokhov, I. A.; Tikhonov, E. V.; Dronov, M. A.; Belogorokhova, L. I.; Ryabchikov, Yu. V.; Tomilova, L. G.; Khokhlov, D. R.

    2011-11-15

    Vibronic properties of organic semiconductors based on tert-butyl substituted phthalocyanine lutetium diphthalocyanine molecules are studied by IR and Raman spectroscopy. It is shown that substitution of several carbon atoms in initial phthalocyanine (Pc) ligands with {sup 13}C isotope atoms causes a spectral shift in the main absorption lines attributed to benzene, isoindol, and peripheral C-H groups. A comparison of spectral characteristics showed that the shift can vary from 3 to 1 cm{sup -1}.

  8. Synthesis of Perylene Imide Diones as Platforms for the Development of Pyrazine Based Organic Semiconductors.

    PubMed

    de Echegaray, Paula; Mancheño, María J; Arrechea-Marcos, Iratxe; Juárez, Rafael; López-Espejo, Guzmán; López Navarrete, J Teodomiro; Ramos, María Mar; Seoane, Carlos; Ortiz, Rocío Ponce; Segura, José L

    2016-11-18

    There is a great interest in peryleneimide (PI)-containing compounds given their unique combination of good electron accepting ability, high abosorption in the visible region, and outstanding chemical, thermal, and photochemical stabilities. Thus, herein we report the synthesis of perylene imide derivatives endowed with a 1,2-diketone functionality (PIDs) as efficient intermediates to easily access peryleneimide (PI)-containing organic semiconductors with enhanced absorption cross-section for the design of tunable semiconductor organic materials. Three processable organic molecular semiconductors containing thiophene and terthiophene moieties, PITa, PITb, and PITT, have been prepared from the novel PIDs. The tendency of these semiconductors for molecular aggregation have been investigated by NMR spectroscopy and supported by quantum chemical calculations. 2D NMR experiments and theoretical calculations point to an antiparallel π-stacking interaction as the most stable conformation in the aggregates. Investigation of the optical and electrochemical properties of the materials is also reported and analyzed in combination with DFT calculations. Although the derivatives presented here show modest electron mobilities of ∼10(-4) cm(2)V(-1)s(-1), these preliminary studies of their performance in organic field effect transistors (OFETs) indicate the potential of these new building blocks as n-type semiconductors.

  9. The fabrication and characterization of flexible single-crystalline silicon and germanium p-intrinsic-n photodetectors on plastic substrates

    NASA Astrophysics Data System (ADS)

    Dang, Mengjiao; Yuan, Hao-Chih; Ma, Zhenqiang; Ma, Jianguo; Qin, Guoxuan

    2017-06-01

    The flexible photodetector is the essential device for many of the optoelectronic applications and its performance can be influenced by a number of factors, including semiconductor materials, illumination conditions, device structures, etc. Therefore, in order to better design and use the flexible photodetectors, it is necessary to understand how these factors affect their performance. In this study, we fabricated flexible lateral p-intrinsic-n photodetectors formed with single-crystalline silicon and germanium nanomembranes on polyethylene terephthalate substrates. The performance of the flexible photodetectors with various dimensions is presented under different illumination conditions. The influences of different semiconductor materials, illumination conditions (wavelength and power of the incident light), and dimensions of the intrinsic region (length and width) on the photocurrent and efficiency are investigated, and the underlying mechanisms are studied based on experimental, simulation, and theoretical analysis. The results provide guidelines for the design and fabrication of flexible single-crystalline semiconductor photodetectors on the plastic substrates.

  10. Conception and realization of a semiconductor based 240 GHz full 3D MIMO imaging system

    NASA Astrophysics Data System (ADS)

    Weisenstein, Christian; Kahl, Matthias; Friederich, Fabian; Haring Bolívar, Peter

    2017-02-01

    Multiple-input multiple-output (MIMO) imaging systems in the terahertz frequency range have a high potential in the field of non-destructive testing (NDT). With such systems it is possible to detect defects in composite materials, for example cracks or delaminations in fiber composites. To investigate mass-produced products it is necessary to study the objects in close to real-time on a conveyor without affecting the production cycle time. In this work we present the conception and realization of a 3D MIMO imaging system for in-line investigation of composite materials and structures. To achieve a lateral resolution of 1 mm, in order to detect such small defects in composite materials with a moderate number of elements, precise sensor design is crucial. In our approach we use the effective aperture concept. The designed sparse array consists of 32 transmitters and 30 receivers based on planar semiconductor components. High range resolution is achieved by an operating frequency between 220 GHz and 260 GHz in a stepped frequency continuous wave (SFCW) setup. A matched filter approach is used to simulate the reconstructed 3D image through the array. This allows the evaluation of the designed array geometry in regard of resolution and side lobe level. In contrast to earlier demonstrations, in which synthetic reconstruction is only performed in a 2D plane, an optics-free full 3D recon- struction has been implemented in our concept. Based on this simulation we designed an array geometry that enables to resolve objects with a resolution smaller than 1mm and moderate side lobe level.

  11. Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

    DOE PAGES

    GopiReddy, Lakshmi Reddy; Tolbert, Leon M.; Ozpineci, Burak; ...

    2015-07-15

    Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted basedmore » on time-dependent temperature calculation.« less

  12. Spin transport properties based on spin gapless semiconductor CoFeMnSi

    NASA Astrophysics Data System (ADS)

    Han, Jiangchao; Feng, Yulin; Yao, Kailun; Gao, G. Y.

    2017-09-01

    Spin gapless semiconductors have been regarded as the most promising candidates for spin injection materials due to the complete (100%) spin polarization and the conductivity between half-metals and semiconductors. To explore the potential spintronic applications of the quaternary Heusler alloy CoFeMnSi (CFMS), a recently fabricated spin gapless semiconductor with a high Curie temperature of 620 K, we design the GaAs/CFMS heterostructure and the CFMS/GaAs/CFMS magnetic tunnel junction (MTJ). It is found from the first-principles calculations combined with nonequilibrium Green's function that the heterostructure exhibits an excellent spin filtering effect and spin diode effect and the MTJ has a large tunnel magnetoresistance ratio (up to 2 × 103), which are explained from the calculated spin-dependent band structure and transmission spectrum. These perfect spin transport characteristics make CFMS a promising candidate for spintronic applications.

  13. Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

    PubMed Central

    2014-01-01

    Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

  14. Exploring the intrinsic differences among breast tumor subtypes defined using immunohistochemistry markers based on the decision tree

    PubMed Central

    Li, Yang; Tang, Xu-Qing; Bai, Zhonghu; Dai, Xiaofeng

    2016-01-01

    Exploring the intrinsic differences among breast cancer subtypes is of crucial importance for precise diagnosis and therapeutic decision-making in diseases of high heterogeneity. The subtypes defined with several layers of information are related but not consistent, especially using immunohistochemistry markers and gene expression profiling. Here, we explored the intrinsic differences among the subtypes defined by the estrogen receptor, progesterone receptor and human epidermal growth factor receptor 2 based on the decision tree. We identified 30 mRNAs and 7 miRNAs differentially expressed along the tree’s branches. The final signature panel contained 30 mRNAs, whose performance was validated using two public datasets based on 3 well-known classifiers. The network and pathway analysis were explored for feature genes, from which key molecules including FOXQ1 and SFRP1 were revealed to be densely connected with other molecules and participate in the validated metabolic pathways. Our study uncovered the differences among the four IHC-defined breast tumor subtypes at the mRNA and miRNA levels, presented a novel signature for breast tumor subtyping, and identified several key molecules potentially driving the heterogeneity of such tumors. The results help us further understand breast tumor heterogeneity, which could be availed in clinics. PMID:27786176

  15. A polyaniline based intrinsically conducting coating for corrosion protection of structural steels.

    PubMed

    Pan, Tongyan; Wang, Zhaoyang

    2013-11-01

    Among the various corrosion protection strategies for structural steels, coating techniques provide the most cost-effective protection and have been used as the primary mode of corrosion protection. Existing coating techniques however have been used mainly for their barrier capability and therefore all have a limited service life due to oxidation aging, electrolytic degradation, or various inadvertent defects and flaws occurred in and after coating applications. This work investigated the anti-corrosion potential of a π-conjugated polymer-polyaniline (PANi), which was doped into an intrinsically conducting polymer and then included in a two-layer coating system as a primer layer. To achieve a long service life, the primer layer was made by mixing the conductive PANi in a waterborne poly-vinyl butyral solution to provide strong adhesion to steel surface, and then topcoated with a layer of elastomer-modified polyethylene to obtain extra mechanical and barrier protections. Two ASTM standard tests were conducted to evaluate the corrosion durability and tensile adhesion of the two-layer system, in which the system demonstrated superior performance. The Scanning Kelvin Probe Force Microscopy (SKPFM) was used to provide the microscopic evidences for the outstanding performance.

  16. Intrinsic non-radiative voltage losses in fullerene-based organic solar cells

    NASA Astrophysics Data System (ADS)

    Benduhn, Johannes; Tvingstedt, Kristofer; Piersimoni, Fortunato; Ullbrich, Sascha; Fan, Yeli; Tropiano, Manuel; McGarry, Kathryn A.; Zeika, Olaf; Riede, Moritz K.; Douglas, Christopher J.; Barlow, Stephen; Marder, Seth R.; Neher, Dieter; Spoltore, Donato; Vandewal, Koen

    2017-06-01

    Organic solar cells demonstrate external quantum efficiencies and fill factors approaching those of conventional photovoltaic technologies. However, as compared with the optical gap of the absorber materials, their open-circuit voltage is much lower, largely due to the presence of significant non-radiative recombination. Here, we study a large data set of published and new material combinations and find that non-radiative voltage losses decrease with increasing charge-transfer-state energies. This observation is explained by considering non-radiative charge-transfer-state decay as electron transfer in the Marcus inverted regime, being facilitated by a common skeletal molecular vibrational mode. Our results suggest an intrinsic link between non-radiative voltage losses and electron-vibration coupling, indicating that these losses are unavoidable. Accordingly, the theoretical upper limit for the power conversion efficiency of single-junction organic solar cells would be reduced to about 25.5% and the optimal optical gap increases to 1.45-1.65 eV, that is, 0.2-0.3 eV higher than for technologies with minimized non-radiative voltage losses.

  17. SS-Stabilizing Proteins Rationally: Intrinsic Disorder-Based Design of Stabilizing Disulphide Bridges in GFP.

    PubMed

    Melnik, Bogdan S; Povarnitsyna, Tatiana V; Glukhov, Anatoly S; Melnik, Tatyana N; Uversky, Vladimir N; Sarma, Ramaswamy H

    2012-01-01

    Abstract The most attractive and methodologically convenient way to enhance protein stability is via the introduction of disulphide bond(s). However, the effect of the artificially introduced SS-bond on protein stability is often quite unpredictable. This raises the question of how to choose the protein sites in an intelligent manner, so that the 'fastening' of these sites by the SS-bond(s) would provide maximal protein stability. We hypothesize that the successful design of a stabilizing SS-bond requires finding highly mobile protein regions. Using GFP as an illustrative example, we demonstrate that the knowledge of the peculiarities of the intramolecular hydrophobic interactions, combined with the understanding of the local intrinsic disorder propensities (that can be evaluated by various disorder predictors, e.g., PONDRFIT), is sufficient to find the candidate sites for the introduction of stabilizing SS-bridge(s). In fact, our analysis revealed that the insertion of the engineered SS-bridge between two highly flexible regions of GFP noticeably increased the conformational stability of this protein toward the thermal and chemical unfolding. Therefore, our study represents a novel approach for the rational design of stabilizing disulphide bridges in proteins.

  18. Influence of optical material properties on strong coupling in organic semiconductor based microcavities

    NASA Astrophysics Data System (ADS)

    Tropf, Laura; Dietrich, Christof P.; Herbst, Stefanie; Kanibolotsky, Alexander L.; Skabara, Peter J.; Würthner, Frank; Samuel, Ifor D. W.; Gather, Malte C.; Höfling, Sven

    2017-04-01

    The optical properties of organic semiconductors are generally characterised by a number of material specific parameters, including absorbance, photoluminescence quantum yield, Stokes shift, and molecular orientation. Here, we study four different organic semiconductors and compare their optical properties to the characteristics of the exciton-polaritons that are formed when these materials are introduced into metal-clad microcavities. We find that the strength of coupling between cavity photons and excitons is clearly correlated with the absorptivity of the material. In addition, we show that anisotropy strongly affects the characteristics of the formed exciton-polaritons.

  19. Bioinspired photoelectric conversion system based on carbon-quantum-dot-doped dye-semiconductor complex.

    PubMed

    Ma, Zheng; Zhang, Yong-Lai; Wang, Lei; Ming, Hai; Li, Haitao; Zhang, Xing; Wang, Fang; Liu, Yang; Kang, Zhenhui; Lee, Shuit-Tong

    2013-06-12

    Compared to nature's photoelectric conversion processes, artificial devices are still far inferior in efficiency and stability. Inspired by light absorption and resonance energy transfer processes of chlorophyll, we developed a highly efficient photoelectric conversion system by introducing Carbon quantum dots (CQDs) as an electron transfer intermediary. Compared with conventional dye-sensitized semiconductor systems, the present CQD-doped system showed significantly higher photoelectric conversion efficiency, as much as 7 times that without CQDs. The CQD-doped dye/semiconductor system may provide a powerful approach to the development of highly efficient photoelectric devices.

  20. Proteasome-based mechanisms of intrinsic and acquired bortezomib resistance in non-small cell lung cancer.

    PubMed

    de Wilt, Leonie H A M; Jansen, Gerrit; Assaraf, Yehuda G; van Meerloo, Johan; Cloos, Jacqueline; Schimmer, Aaron D; Chan, Elena T; Kirk, Christopher J; Peters, Godefridus J; Kruyt, Frank A E

    2012-01-15

    The proteasome inhibitor bortezomib, registered for Multiple Myeloma treatment, is currently explored for activity in solid tumors including non-small cell lung cancer (NSCLC). Here we studied the proteasome-based mechanisms underlying intrinsic and acquired bortezomib resistance in NSCLC cells. Various NSCLC cell lines displayed differential intrinsic sensitivities to bortezomib. High basal chymotrypsin- and caspase-like proteasome activities correlated with bortezomib resistance in these cells. Next, via stepwise selection, acquired bortezomib resistant cells were obtained with 8-70-fold increased resistance. Cross-resistance was found to proteasome inhibitors specifically targeting β-subunits, but not to the novel α-subunit-specific proteasome inhibitor (5AHQ). Consistently, bortezomib-resistant cells required higher bortezomib concentrations to induce G2/M arrest and apoptosis. Interestingly, bortezomib concentration-dependent caspase cleavage, Mcl-1 and NOXA accumulation remained intact in resistant H460 and SW1573 cells, while A549 resistant cells displayed different expression profiles suggesting additional and more protein specific adaptations. Furthermore, bortezomib-resistant cells exhibited increased levels of both constitutive and immuno-β-subunits. Sequence analysis of the bortezomib-binding pocket in the β5-subunit revealed Ala49Thr, Met45Val and Cys52Phe substitutions that were not previously described in solid tumors. Bortezomib-resistant cells displayed reduced catalytic proteasome activities and required higher bortezomib concentrations to achieve comparable inhibition of proteasome activity. Taken together, these findings establish that high basal levels of proteasome activity correlate with intrinsic bortezomib resistance. Furthermore, acquired bortezomib resistance in NSCLC is associated with proteasome subunit overexpression and emergence of mutant β5-subunits that likely compromise bortezomib binding. α-Subunit-specific proteasome

  1. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

    PubMed

    Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

    2014-10-20

    In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

  2. Raman scattering in organic semiconductors based on erbium biphthalocyanine molecules and chlorine-containing europium-lutetium triphthalocyanine molecules

    SciTech Connect

    Belogorokhov, I. A.; Mamichev, D. A.; Dronov, M. A.; Pushkarev, V. E.; Tomilova, L. G.; Khokhlov, D. R.

    2010-08-15

    The Raman spectra of semiconductor structures based on erbium biphthalocyanine molecules and chlorine-substituted europium-lutetium triphthalocyanine molecules are studied on excitation with Ar{sup +} laser radiation at the wavelength 514 nm. The data on the spectral position of Raman intensity peaks related to vibronic states of the basic molecular groups forming the semiconductor are obtained. Raman lines irrelevant to the known vibronic states of the basic phthalocyanine molecular groups are observed in the ranges 100-500 and 500-900 cm{sup -1}. It is shown that, in the spectra of triphthalocyanine, some lines are structurally complex and shifted with respect to the characteristic lines of molecular groups by several inverse centimeters.

  3. Thermal and Optical Modulation of the Carrier Mobility in OTFTs Based on an Azo-anthracene Liquid Crystal Organic Semiconductor.

    PubMed

    Chen, Yantong; Li, Chao; Xu, Xiuru; Liu, Ming; He, Yaowu; Murtaza, Imran; Zhang, Dongwei; Yao, Chao; Wang, Yongfeng; Meng, Hong

    2017-03-01

    One of the most striking features of organic semiconductors compared with their corresponding inorganic counterparts is their molecular diversity. The major challenge in organic semiconductor material technology is creating molecular structural motifs to develop multifunctional materials in order to achieve the desired functionalities yet to optimize the specific device performance. Azo-compounds, because of their special photoresponsive property, have attracted extensive interest in photonic and optoelectronic applications; if incorporated wisely in the organic semiconductor groups, they can be innovatively utilized in advanced smart electronic applications, where thermal and photo modulation is applied to tune the electronic properties. On the basis of this aspiration, a novel azo-functionalized liquid crystal semiconductor material, (E)-1-(4-(anthracen-2-yl)phenyl)-2-(4-(decyloxy)phenyl)diazene (APDPD), is designed and synthesized for application in organic thin-film transistors (OTFTs). The UV-vis spectra of APDPD exhibit reversible photoisomerizaton upon photoexcitation, and the thin films of APDPD show a long-range orientational order based on its liquid crystal phase. The performance of OTFTs based on this material as well as the effects of thermal treatment and UV-irradiation on mobility are investigated. The molecular structure, stability of the material, and morphology of the thin films are characterized by thermal gravimetric analysis (TGA), polarizing optical microscopy (POM), (differential scanning calorimetry (DSC), UV-vis spectroscopy, atomic force microscopy (AFM), and scanning tunneling microscopy (STM). This study reveals that our new material has the potential to be applied in optical sensors, memories, logic circuits, and functional switches.

  4. The intrinsic periodic fluctuation of forest: a theoretical model based on diffusion equation

    NASA Astrophysics Data System (ADS)

    Zhou, J.; Lin, G., Sr.

    2015-12-01

    Most forest dynamic models predict the stable state of size structure as well as the total basal area and biomass in mature forest, the variation of forest stands are mainly driven by environmental factors after the equilibrium has been reached. However, although the predicted power-law size-frequency distribution does exist in analysis of many forest inventory data sets, the estimated distribution exponents are always shifting between -2 and -4, and has a positive correlation with the mean value of DBH. This regular pattern can not be explained by the effects of stochastic disturbances on forest stands. Here, we adopted the partial differential equation (PDE) approach to deduce the systematic behavior of an ideal forest, by solving the diffusion equation under the restricted condition of invariable resource occupation, a periodic solution was gotten to meet the variable performance of forest size structure while the former models with stable performance were just a special case of the periodic solution when the fluctuation frequency equals zero. In our results, the number of individuals in each size class was the function of individual growth rate(G), mortality(M), size(D) and time(T), by borrowing the conclusion of allometric theory on these parameters, the results perfectly reflected the observed "exponent-mean DBH" relationship and also gave a logically complete description to the time varying form of forest size-frequency distribution. Our model implies that the total biomass of a forest can never reach a stable equilibrium state even in the absence of disturbances and climate regime shift, we propose the idea of intrinsic fluctuation property of forest and hope to provide a new perspective on forest dynamics and carbon cycle research.

  5. Survival prediction model of children with diffuse intrinsic pontine glioma based on clinical and radiological criteria.

    PubMed

    Jansen, Marc H; Veldhuijzen van Zanten, Sophie E; Sanchez Aliaga, Esther; Heymans, Martijn W; Warmuth-Metz, Monika; Hargrave, Darren; van der Hoeven, Erica J; Gidding, Corrie E; de Bont, Eveline S; Eshghi, Omid S; Reddingius, Roel; Peeters, Cacha M; Schouten-van Meeteren, Antoinette Y N; Gooskens, Rob H J; Granzen, Bernd; Paardekooper, Gabriel M; Janssens, Geert O; Noske, David P; Barkhof, Frederik; Kramm, Christof M; Vandertop, W Peter; Kaspers, Gertjan J; van Vuurden, Dannis G

    2015-01-01

    Although diffuse intrinsic pontine glioma (DIPG) carries the worst prognosis of all pediatric brain tumors, studies on prognostic factors in DIPG are sparse. To control for confounding variables in DIPG studies, which generally include relatively small patient numbers, a survival prediction tool is needed. A multicenter retrospective cohort study was performed in the Netherlands, the UK, and Germany with central review of clinical data and MRI scans of children with DIPG. Cox proportional hazards with backward regression was used to select prognostic variables (P < .05) to predict the accumulated 12-month risk of death. These predictors were transformed into a practical risk score. The model's performance was validated by bootstrapping techniques. A total of 316 patients were included. The median overall survival was 10 months. Multivariate Cox analysis yielded 5 prognostic variables of which the coefficients were included in the risk score. Age ≤3 years, longer symptom duration at diagnosis, and use of oral and intravenous chemotherapy were favorable predictors, while ring enhancement on MRI at diagnosis was an unfavorable predictor. With increasing risk score categories, overall survival decreased significantly. The model can distinguish between patients with very short, average, and increased overall survival (medians of 7.0, 9.7, and 13.7 mo, respectively). The area under the receiver operating characteristic curve was 0.68. We developed a DIPG survival prediction tool that can be used to predict the outcome of patients and for stratification in trials. Validation of the model is needed in a prospective cohort. © The Author(s) 2014. Published by Oxford University Press on behalf of the Society for Neuro-Oncology. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  6. Laser beam shaping optical system design methods and their application in edge-emitting semiconductor laser-based LIDAR systems

    NASA Astrophysics Data System (ADS)

    Serkan, Mert

    LIDAR (Light Detection And Ranging) systems are employed for numerous applications such as remote sensing, military applications, optical data storage, display technology, and material processing. Furthermore, they are superior to other active remote sensing tools such as RADAR systems, considering their higher accuracy and more precise resolution due to their much shorter wavelengths and narrower beamwidth. Several types of lasers can be utilized as the radiation source of several LIDAR systems. Semiconductor laser-based LIDAR systems have several advantages such as low cost, compactness, broad range of wavelengths, and high PRFs (Pulse Repetition Frequency). However, semiconductor lasers have different origins and angles of divergence in the two transverse directions, resulting in the inherent astigmatism and elliptical beam shape. Specifically, elliptical beam shape is not desirable for several laser-based applications including LIDAR systems specifically designed to operate in the far-field region. In this dissertation, two mirror-based and two lens-based beam shapers are designed to circularize, collimate, and expand an edge-emitting semiconductor laser beam to a desired beam diameter for possible application in LIDAR systems. Additionally, most laser beams including semiconductor laser beams have Gaussian irradiance distribution. For applications that require uniform illumination of an extended target area, Gaussian irradiance distribution is undesirable. Therefore, a specific beam shaper is designed to transform the irradiance distribution from Gaussian to uniform in addition to circularizing, collimating, and expanding the semiconductor laser beam. For the design of beam shapers, aperture sizes of the surfaces are preset for desired power transmission and allowed diffraction level, surface parameters of the optical components and the distances between these surfaces are determined. Design equations specific to these beam shaping optical systems are

  7. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  8. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    SciTech Connect

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-05-07

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally.

  9. Nanoassemblies Based on Semiconductor Quantum Dots and Dye Molecules:. Single Objects Detection and Related Interface Dynamics

    NASA Astrophysics Data System (ADS)

    Zenkevich, E.; von Borczyskowski, C.; Kowerko, D.

    2013-05-01

    Single molecule spectroscopy of QD-dye nanoassemblies is shown that single functionalized dye molecules (perylene-bisimides and meso-pyridyl porphyrins) can be considered as extremely sensitive probes for studying exciton and relaxation processes in semiconductor CdSe/ZnS quantum dots.

  10. Electric Conduction in Semiconductors: A Pedagogical Model Based on the Monte Carlo Method

    ERIC Educational Resources Information Center

    Capizzo, M. C.; Sperandeo-Mineo, R. M.; Zarcone, M.

    2008-01-01

    We present a pedagogic approach aimed at modelling electric conduction in semiconductors in order to describe and explain some macroscopic properties, such as the characteristic behaviour of resistance as a function of temperature. A simple model of the band structure is adopted for the generation of electron-hole pairs as well as for the carrier…

  11. Optical logic and signal processing using a semiconductor laser diode-based optical bistability device

    NASA Astrophysics Data System (ADS)

    Zhang, Yuancheng; Song, Qian; He, Shaowei

    1995-02-01

    Using an optical fibre-coupled semiconductor laser diode OBD with output feedback pumping operation in 5 modes (differential gain, bistability, zero-bias, inverted differential gain, and inverted bistability) has been realized respectively, and 5 elementary optical logic functions (AND, OR, NOT, NAND, and NOR) and some optical signal processing such as limiting, reshaping, and triggering have been implemented.

  12. A lysinated thiophene-based semiconductor as a multifunctional neural bioorganic interface.

    PubMed

    Bonetti, Simone; Pistone, Assunta; Brucale, Marco; Karges, Saskia; Favaretto, Laura; Zambianchi, Massimo; Posati, Tamara; Sagnella, Anna; Caprini, Marco; Toffanin, Stefano; Zamboni, Roberto; Camaioni, Nadia; Muccini, Michele; Melucci, Manuela; Benfenati, Valentina

    2015-06-03

    Lysinated molecular organic semiconductors are introduced as valuable multifunctional platforms for neural cells growth and interfacing. Cast films of quaterthiophene (T4) semiconductor covalently modified with lysine-end moieties (T4Lys) are fabricated and their stability, morphology, optical/electrical, and biocompatibility properties are characterized. T4Lys films exhibit fluorescence and electronic transport as generally observed for unsubstituted oligothiophenes combined to humidity-activated ionic conduction promoted by the charged lysine-end moieties. The Lys insertion in T4 enables adhesion of primary culture of rat dorsal root ganglion (DRG), which is not achievable by plating cells on T4. Notably, on T4Lys, the number on adhering neurons/area is higher and displays a twofold longer neurite length than neurons plated on glass coated with poly-l-lysine. Finally, by whole-cell patch-clamp, it is shown that the biofunctionality of neurons cultured on T4Lys is preserved. The present study introduces an innovative concept for organic material neural interface that combines optical and iono-electronic functionalities with improved biocompatibility and neuron affinity promoted by Lys linkage and the softness of organic semiconductors. Lysinated organic semiconductors could set the scene for the fabrication of simplified bioorganic devices geometry for cells bidirectional communication or optoelectronic control of neural cells biofunctionality. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Electric Conduction in Semiconductors: A Pedagogical Model Based on the Monte Carlo Method

    ERIC Educational Resources Information Center

    Capizzo, M. C.; Sperandeo-Mineo, R. M.; Zarcone, M.

    2008-01-01

    We present a pedagogic approach aimed at modelling electric conduction in semiconductors in order to describe and explain some macroscopic properties, such as the characteristic behaviour of resistance as a function of temperature. A simple model of the band structure is adopted for the generation of electron-hole pairs as well as for the carrier…

  14. Characterization of a novel intrinsic luminescent room-temperature ionic liquid based on [P6,6,6,14 ][ANS].

    PubMed

    Delgado, Joana M; Raymundo, Anabela; Vilarigues, Márcia; Branco, Luís C; Laia, César A T

    2015-01-07

    Intrinsically luminescent room-temperature ionic liquids (RTILs) can be prepared by combining a luminescent anion (more common) or cation with appropriate counter ions, rendering new luminescent soft materials. These RTILs are still new, and many of their photochemical properties are not well known. A novel intrinsic luminescent RTIL based on the 8-anilinonaphthalene-1-sulfonate ([ANS]) anion combined with the trihexyltetradecylphosphonium ([P6,6,6,14 ]) cation was prepared and characterized by spectroscopic techniques. Detailed photophysical studies highlight the influence of the ionic liquid environment on the ANS fluorescence, which together with rheological and (1) H NMR experiments illustrate the effects of both the viscosity and electrostatic interactions between the ions. This material is liquid at room temperature and possesses a glass transition temperature (Tg ) of 230.4 K. The fluorescence is not highly sensitive to factors such as temperature, but owing to its high viscosity, dynamic Stokes shift measurements reveal very slow components for the IL relaxation. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Relaxivity of Gd-based contrast agents on X nuclei with long intrinsic relaxation times in aqueous solutions

    PubMed Central

    van Heeswijk, Ruud B.; Laus, Sabrina; Morgenthaler, Florence D.; Gruetter, Rolf

    2007-01-01

    The relaxivity of commercially available gadolinium-based contrast agents was studied for X-nuclei resonances with long intrinsic relaxation times ranging between 6 and several hundred seconds. Omniscan in pure 13C formic acid had a relaxivity of 2.9 mM-1 s-1, whereas its relaxivity on glutamate C1 and C5 in aqueous solution was ∼0.5 mM-1 s-1. Both relaxivities allow the preparation of solutions with a predetermined short T1 suggest that in vitro substantial sensitivity gains in their measurement can be achieved. 6Li has a long intrinsic relaxation time, on the order of several minutes, which was strongly affected by the contrast agents. Relaxivity ranged from ∼0.1 mM-1 s-1 for Omniscan to 0.3 for Magnevist, whereas the relaxivity of Gd-DOTP was at 11 mM-1 s-1 two orders of magnitude higher. Overall these experiments suggest that the presence of 0.1-10 μM contrast agents should be detectable, provided sufficient sensitivity is available, such as that afforded by hyperpolarization, recently introduced to in vivo imaging. PMID:17448617

  16. Facing the sunrise: cultural worldview underlying intrinsic-based encoding of absolute frames of reference in aymara.

    PubMed

    Núñez, Rafael E; Cornejo, Carlos

    2012-08-01

    The Aymara of the Andes use absolute (cardinal) frames of reference for describing the relative position of ordinary objects. However, rather than encoding them in available absolute lexemes, they do it in lexemes that are intrinsic to the body: nayra ("front") and qhipa ("back"), denoting east and west, respectively. Why? We use different but complementary ethnographic methods to investigate the nature of this encoding: (a) linguistic expressions and speech-gesture co-production, (b) linguistic patterns in the distinct regional Spanish-based variety Castellano Andino (CA), (c) metaphorical extensions of CA's spatial patterns to temporal ones, and (d) layouts of traditional houses. Findings indicate that, following fundamental principles of Aymara cosmology, people, objects, and land--as a whole--are conceived as having an implicit canonical orientation facing east, a primary landmark determined by the sunrise. The above bodily based lexicalizations are thus linguistic manifestations of a broader macro-cultural worldview and its psycho-cognitive reality.

  17. Bipolar magnetic semiconductor in silicene nanoribbons

    NASA Astrophysics Data System (ADS)

    Farghadan, Rouhollah

    2017-08-01

    A theoretical study was presented on generation of spin polarization in silicene nanoribbons using the single-band tight-binding approximation and the non-equilibrium Green's function formalism. We focused on the effect of electric and exchange magnetic fields on the spin-filter capabilities of zigzag-edge silicene nanoribbons in the presence of the intrinsic spin-orbit interaction. The results show that a robust bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps can be obtained when exchange magnetic and electric field strengths are both larger than the intrinsic spin-orbit interaction. Therefore, zigzag silicene nanoribbons could act as bipolar and perfect spin filter devices with a large spin-polarized current and a reversible spin polarization in the vicinity of the Fermi energy. We also investigated the effect of edge roughness and found that the bipolar magnetic semiconductor features are robust against edge disorder in silicene nanoribbon junctions. These results may be useful in multifunctional spin devices based on silicene nanoribbons.

  18. Band offset formation at semiconductor heterojunctions through density-based minimization of interface energy

    NASA Astrophysics Data System (ADS)

    Tung, Raymond T.; Kronik, Leeor

    2016-08-01

    It is well known that the magnitude of band offset (BO) at any semiconductor heterojunction is directly derivable from the distribution of charge at that interface and that the latter is decided by a minimization of total energy. However, the fact that BO formation is governed by energy minimization has not been explicitly used in theoretical BO models, likely because the equilibrium charge densities at heterojunction interfaces appear difficult to predict, except via explicit calculation. In this paper, electron densities at a large number of (100), (110), and (111) oriented heterojunctions between lattice-matched, isovalent semiconductors with the zinc blende (ZB) structure have been calculated by first-principles methods and analyzed in detail for possible common characteristics among energy-minimized densities. Remarkably, the heterojunction electron density was found to largely depend only on the immediate, local atomic arrangement. In fact, it is so much so that a juxtaposition of local electron-densities generated in oligo-cells (LEGOs) accurately reproduced the charge densities that minimize the energy for the heterojunctions. Furthermore, the charge distribution for each bulk semiconductor was found to display a striking separability of its electrostatic effect into two neutral parts, associated with the cation and the anion, which are approximately transferrable among semiconductors. These discoveries form the basis of a neutral polyhedra theory (NPT) that approximately predicts the equilibrium charge density and BO of relaxed heterojunctions from the energy minimization requirement. Well-known experimentally observed characteristics of heterojunctions, such as the insensitivity of BO to heterojunction orientation and the identity of interface bonds, the transitivity rule, etc., are all in good agreement with the NPT. Therefore, energy minimization, which essentially decides the electronic properties of all other solid and molecular systems, also governs

  19. Dual emissions from MnS clusters confined in the sodalite nanocage of a chalcogenide-based semiconductor zeolite.

    PubMed

    Hu, Dandan; Zhang, Yingying; Lin, Jian; Hou, Yike; Li, Dongsheng; Wu, Tao

    2017-03-21

    A new host-guest hybrid system with MnS clusters confined in a chalcogenide-based semiconductor zeolite was for the first time constructed and its photoluminescence (PL) properties were also investigated. The existence of MnS clusters in the nanopores of the semiconductor zeolite was revealed by UV-Vis absorption spectroscopy, steady-state fluorescence analysis, Raman as well as Fourier transform infrared (FTIR) spectroscopy. The aggregation state of the entrapped MnS clusters at different measurement temperatures was probed by electron paramagnetic resonance (EPR) spectroscopy. Of significant importance is the fact that the entrapped MnS clusters displayed dual emissions at 518 nm (2.39 eV) and 746 nm (1.66 eV), respectively, and the long-wavelength emission has never been observed in other MnS-confined host-guest systems. These two emission peaks displayed tunable PL intensity affected by the loading level and measurement temperature. This can be explained by the different morphologies of MnS clusters with different aggregation states at the corresponding loading level or measurement temperature. The current study opens a new avenue to construct inorganic chalcogenide cluster involved host-guest systems with a semiconductor zeolite as the host matrix.

  20. Electrical properties of BaTiO3 based - MFIS heterostructure: Role of semiconductor channel carrier concentration

    NASA Astrophysics Data System (ADS)

    Vagadia, Megha; Ravalia, Ashish; Solanki, P. S.; Pandey, Parul; Asokan, K.; Kuberkar, D. G.

    2014-05-01

    Effect of semiconductor channel carrier concentration on the modifications in the electrical properties of Ag/BaTiO3/SrTiO3/ZnO Metal-Ferroelectric-Insulator-Semiconductor (MFIS) heterostructure has been investigated. Under 4 V applied voltage, low leakage current density ˜3.2 × 10-6 A/cm2, has been observed in ZnO based MFIS heterostructure, which becomes ˜5.0 × 10-6 A/cm2 for MFIS with Al:ZnO channel. Observation of counterclockwise butterfly shaped C-V behavior confirms that, hysteresis in C-V is due to spontaneous ferroelectric polarization and field effect. A device with ZnO semiconductor exhibit ˜2700% modulation which decreases to ˜800% for Al: ZnO channel with good retention behavior. Pulse induced write/erase repeatability of source/drain current confirms the usefulness of the presently studied devices for non-volatile switching memory application.

  1. High-frequency capacitance-voltage characteristics of the heterogeneous structure based on the model of spherical semiconductor particles in a dielectric

    NASA Astrophysics Data System (ADS)

    Tonkoshkur, A. S.; Ivanchenko, A. V.

    2016-08-01

    The dependence of the parameters of the capacitance effect in heterogeneous dispersed two-component structures based on semiconductors from the bulk fraction of the semiconductor component is modeled. The used method for determining the changes of the energy bands bending on the surface of the spherical semiconductor particle by applying dc electric field allowed to calculate the changes of the dipole moment and effective (taking into account the polarization of the free charge) dielectric constant of this semiconductor particle. This result allowed to use the known models of the dielectric constant of two-component structures for the description of the capacitance field effect in the heterogeneous structures. The relations allowing to estimate the value of the bulk donor concentration in the semiconductor component of the matrix of the heterogeneous system and the statistical mixture have been obtained. The approbation of the obtained calculation relations to evaluate the donor concentration in the ZnO grains of zinc oxide varistor ceramics leads to the correct values that are consistent with estimates of other methods and models. It is established that the sensitivity of the relative dielectric constant to the applied dc electric field is dependent on the bulk fraction of the semiconductor particles in the heterogeneous structures. The bulk fraction of the semiconductor particles significantly affects on the dielectric constant beginning with the values from ˜0.8 for matrix systems and ˜0.33 for statistical mixtures.

  2. Switchable dual-wavelength fiber laser based on semiconductor optical amplifier and polarization-maintaining fiber Bragg grating

    NASA Astrophysics Data System (ADS)

    Feng, Suchun; Xu, Ou; Lu, Shaohua; Ren, Wenhua; Jian, Shuisheng

    2008-12-01

    Switchable dual-wavelength with orthogonal polarizations fiber laser based on semiconductor optical amplifier (SOA) and polarization-maintaining fiber Bragg grating (PMFBG) at room temperature is proposed. Owing to the polarization dependent loss of the PMFBG, the laser can be designed to operate in stable dual-wavelength or wavelength-switching modes with a wavelength spacing of 0.336 nm at room temperature by adjusting the polarization controller (PC). The amplitude variation in nearly half an hour is less than 0.1 dB for both wavelengths, which is more stable than that of erbium doped fiber (EDF)-based laser with similar configuration.

  3. Macroporous Semiconductors

    PubMed Central

    Föll, Helmut; Leisner, Malte; Cojocaru, Ala; Carstensen, Jürgen

    2010-01-01

    Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  4. Semiconductor P-I-N detector

    DOEpatents

    Sudharsanan, Rengarajan; Karam, Nasser H.

    2001-01-01

    A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

  5. Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

    NASA Astrophysics Data System (ADS)

    Wang, Shaoqing; Jin, Zhi; Muhammad, Asif; Peng, Songang; Huang, Xinnan; Zhang, Dayong; Shi, Jingyuan

    2016-10-01

    The most common method of mobility extraction for graphene field-effect transistors is proposed by Kim. Kim’s method assumes a constant mobility independent of carrier density and gets the mobility by fitting the transfer curves. However, carrier mobility changes with the carrier density, leading to the inaccuracy of Kim’s method. In our paper, a new and more accurate method is proposed to extract mobility by fitting the output curves at a constant gate voltage. The output curves are fitted using several kinds of current-voltage models. Besides the models in the literature, we present a modified model, which takes into account not only the quantum capacitance, contact resistance, but also a modified drift velocity-field relationship. Comparing with the other models, this new model can fit better with our experimental data. The dependence of carrier intrinsic mobility on carrier density is obtained based on this model.

  6. Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices

    PubMed Central

    Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

    2015-01-01

    A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules. PMID:26207723

  7. Multistrip synthetic single-crystal-diamond photodiode based on a p-type/intrinsic/Schottky metal transverse configuration

    NASA Astrophysics Data System (ADS)

    Ciancaglioni, I.; Marinelli, Marco; Milani, E.; Prestopino, G.; Verona, C.; Verona-Rinati, G.; Angelone, M.; Pillon, M.; Dolbnya, I.; Sawhney, K.; Tartoni, N.

    2011-04-01

    A synthetic multistrip single-crystal-diamond detector based on a p-type/intrinsic diamond/Schottky metal transverse configuration, operating at zero-bias voltage, was developed. The device was characterized at the Diamond Light Source synchrotron in Harwell (UK) under monochromatic high-flux X-ray beams from 6 to 20 keV and a micro-focused 10 keV beam with a spot size of ~3 μm. No significant pixel-to-pixel variation of both spectral responsivity and time response, high spatial resolution and good signal uniformity along each strip were found, suggesting the tested device structure as a promising sensor for X-ray and UV radiation imaging.

  8. A nitride based polarization-engineered photocathode for water splitting without a p-type semiconductor.

    PubMed

    Nakamura, Akihiro; Fujii, Katsushi; Sugiyama, Masakazu; Nakano, Yoshiaki

    2014-08-07

    Photoelectrochemical water splitting is a promising way for hydrogen production with low environmental burden. Although III-nitride semiconductors have potentially favorable properties as water splitting photoelectrodes, they have several limitations for practical use currently. In this study, the concept of a polarization-engineered nitride photocathode for water splitting is proposed to overcome this problem. We observed that the proposed GaN/AlN/GaN structure worked as a photocathode even though it consisted of only n-type III-nitride semiconductors. This polarization-engineered photocathode showed a remarkably stable and relatively high photocurrent since it can avoid the causes of problems from which both n-type and p-type conventional GaN photoelectrodes suffer.

  9. Chaos synchronization based on a continuous chaos control method in semiconductor lasers with optical feedback.

    PubMed

    Murakami, A; Ohtsubo, J

    2001-06-01

    Chaos synchronization using a continuous chaos control method was studied in two identical chaotic laser systems consisting of semiconductor lasers and optical feedback from an external mirror. Numerical calculations for rate equations indicate that the stability of chaos synchronization depends significantly on the external mirror position. We performed a linear stability analysis for the rate equations. Our results show that the stability of the synchronization is much influenced by the mode interaction between the relaxation oscillation frequency of the semiconductor laser and the external cavity frequency. Due to this interaction, an intensive mode competition between the two frequencies destroys the synchronization, but stable synchronization can be achieved when the mode competition is very weak.

  10. Semiconductor laser self-mixing micro-vibration measuring technology based on Hilbert transform

    NASA Astrophysics Data System (ADS)

    Tao, Yufeng; Wang, Ming; Xia, Wei

    2016-06-01

    A signal-processing synthesizing Wavelet transform and Hilbert transform is employed to measurement of uniform or non-uniform vibrations in self-mixing interferometer on semiconductor laser diode with quantum well. Background noise and fringe inclination are solved by decomposing effect, fringe counting is adopted to automatic determine decomposing level, a couple of exact quadrature signals are produced by Hilbert transform to extract vibration. The tempting potential of real-time measuring micro vibration with high accuracy and wide dynamic response bandwidth using proposed method is proven by both simulation and experiment. Advantages and error sources are presented as well. Main features of proposed semiconductor laser self-mixing interferometer are constant current supply, high resolution, simplest optical path and much higher tolerance to feedback level than existing self-mixing interferometers, which is competitive for non-contact vibration measurement.

  11. Semiconductor nanoparticle-based hydrogels prepared via self-initiated polymerization under sunlight, even visible light

    PubMed Central

    Zhang, Da; Yang, Jinhu; Bao, Song; Wu, Qingsheng; Wang, Qigang

    2013-01-01

    Since ancient times, people have used photosynthesized wood, bamboo, and cotton as building and clothing materials. The advantages of photo polymerization include the mild and easy process. However, the direct use of available sunlight for the preparation of materials is still a challenge due to its rather dilute intensity. Here, we show that semiconductor nanoparticles can be used for initiating monomer polymerization under sunlight and for cross-linking to form nanocomposite hydrogels with the aid of clay nanosheets. Hydrogels are an emerging multifunctional platform because they can be easily prepared using solar energy, retain semiconductor nanoparticle properties after immobilization, exhibit excellent mechanical strength (maximum compressive strength of 4.153 MPa and tensile strength 1.535 MPa) and high elasticity (maximum elongation of 2784%), and enable recyclable photodegradation of pollutants. This work suggests that functional nanoparticles can be immobilized in hydrogels for their collective application after combining their mechanical and physiochemical properties. PMID:23466566

  12. Semiconductor nanoparticle-based hydrogels prepared via self-initiated polymerization under sunlight, even visible light.

    PubMed

    Zhang, Da; Yang, Jinhu; Bao, Song; Wu, Qingsheng; Wang, Qigang

    2013-01-01

    Since ancient times, people have used photosynthesized wood, bamboo, and cotton as building and clothing materials. The advantages of photo polymerization include the mild and easy process. However, the direct use of available sunlight for the preparation of materials is still a challenge due to its rather dilute intensity. Here, we show that semiconductor nanoparticles can be used for initiating monomer polymerization under sunlight and for cross-linking to form nanocomposite hydrogels with the aid of clay nanosheets. Hydrogels are an emerging multifunctional platform because they can be easily prepared using solar energy, retain semiconductor nanoparticle properties after immobilization, exhibit excellent mechanical strength (maximum compressive strength of 4.153 MPa and tensile strength 1.535 MPa) and high elasticity (maximum elongation of 2784%), and enable recyclable photodegradation of pollutants. This work suggests that functional nanoparticles can be immobilized in hydrogels for their collective application after combining their mechanical and physiochemical properties.

  13. Evaluation of a CdTe semiconductor based compact gamma camera for sentinel lymph node imaging

    SciTech Connect

    Russo, Paolo; Curion, Assunta S.; Mettivier, Giovanni; Esposito, Michela; Aurilio, Michela; Caraco, Corradina; Aloj, Luigi; Lastoria, Secondo

    2011-03-15

    Purpose: The authors assembled a prototype compact gamma-ray imaging probe (MediPROBE) for sentinel lymph node (SLN) localization. This probe is based on a semiconductor pixel detector. Its basic performance was assessed in the laboratory and clinically in comparison with a conventional gamma camera. Methods: The room-temperature CdTe pixel detector (1 mm thick) has 256x256 square pixels arranged with a 55 {mu}m pitch (sensitive area 14.08x14.08 mm{sup 2}), coupled pixel-by-pixel via bump-bonding to the Medipix2 photon-counting readout CMOS integrated circuit. The imaging probe is equipped with a set of three interchangeable knife-edge pinhole collimators (0.94, 1.2, or 2.1 mm effective diameter at 140 keV) and its focal distance can be regulated in order to set a given field of view (FOV). A typical FOV of 70 mm at 50 mm skin-to-collimator distance corresponds to a minification factor 1:5. The detector is operated at a single low-energy threshold of about 20 keV. Results: For {sup 99m}Tc, at 50 mm distance, a background-subtracted sensitivity of 6.5x10{sup -3} cps/kBq and a system spatial resolution of 5.5 mm FWHM were obtained for the 0.94 mm pinhole; corresponding values for the 2.1 mm pinhole were 3.3x10{sup -2} cps/kBq and 12.6 mm. The dark count rate was 0.71 cps. Clinical images in three patients with melanoma indicate detection of the SLNs with acquisition times between 60 and 410 s with an injected activity of 26 MBq {sup 99m}Tc and prior localization with standard gamma camera lymphoscintigraphy. Conclusions: The laboratory performance of this imaging probe is limited by the pinhole collimator performance and the necessity of working in minification due to the limited detector size. However, in clinical operative conditions, the CdTe imaging probe was effective in detecting SLNs with adequate resolution and an acceptable sensitivity. Sensitivity is expected to improve with the future availability of a larger CdTe detector permitting operation at shorter

  14. Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation

    SciTech Connect

    Vlasenko, N. A. Oleksenko, P. F.; Mukhlyo, M. A.; Veligura, L. I.

    2013-08-15

    The causes of changes that occur in a thin-film electroluminescent metal-insulator-semiconductor-insulator-metal waveguide structure based on ZnS:Cr (Cr concentration of {approx}4 Multiplication-Sign 10{sup 20} cm{sup -3}) upon lasing ({lambda} Almost-Equal-To 2.6 {mu}m) and that induce lasing cessation are studied. It is established that lasing ceases because of light-scattering inhomogeneities formed in the structure and, hence, optical losses enhance. The origin of the inhomogeneities and the causes of their formation are clarified by studying the surface topology and the crystal structure of constituent layers of the samples before and after lasing. The studies are performed by means of atomic force microscopy and X-ray radiography. It is shown that a substantial increase in the sizes of grains on the surface of the structure is the manifestation of changes induced in the ZnS:Cr film by recrystallization. Recrystallization is initiated by local heating by absorbed laser radiation in existing Cr clusters and quickened by a strong electric field (>1 MV cm{sup -1}). The changes observed in the ZnS:Cr film are as follows: the textured growth of ZnS crystallites, an increase in the content of Cr clusters, and the appearance of some CrS and a rather high ZnO content. Some ways for improving the stability of lasing in the ZnS:Cr-based waveguide structures are proposed.

  15. Device Concepts Based on Spin-dependent Transmission in Semiconductor Heterostructures

    NASA Technical Reports Server (NTRS)

    Ting, David Z. - Y.; Cartoixa, X.

    2004-01-01

    We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.

  16. Fully tunable 360° microwave photonic phase shifter based on a single semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

    2011-08-01

    A fully tunable microwave photonic phase shifter involving a single semiconductor optical amplifier (SOA) is proposed and demonstrated. 360° microwave phase shift has been achieved by tuning the carrier wavelength and the optical input power injected in an SOA while properly profiting from the dispersion feature of a conveniently designed notch filter. It is shown that the optical filter can be advantageously employed to switch between positive and negative microwave phase shifts. Numerical calculations corroborate the experimental results showing an excellent agreement.

  17. Device Concepts Based on Spin-dependent Transmission in Semiconductor Heterostructures

    NASA Technical Reports Server (NTRS)

    Ting, David Z. - Y.; Cartoixa, X.

    2004-01-01

    We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.

  18. Highly Stretchable Fully-Printed CNT-Based Electrochemical Sensors and Biofuel Cells: Combining Intrinsic and Design-Induced Stretchability.

    PubMed

    Bandodkar, Amay J; Jeerapan, Itthipon; You, Jung-Min; Nuñez-Flores, Rogelio; Wang, Joseph

    2016-01-13

    We present the first example of an all-printed, inexpensive, highly stretchable CNT-based electrochemical sensor and biofuel cell array. The synergistic effect of utilizing specially tailored screen printable stretchable inks that combine the attractive electrical and mechanical properties of CNTs with the elastomeric properties of polyurethane as a binder along with a judiciously designed free-standing serpentine pattern enables the printed device to possess two degrees of stretchability. Owing to these synergistic design and nanomaterial-based ink effects, the device withstands extremely large levels of strains (up to 500% strain) with negligible effect on its structural integrity and performance. This represents the highest stretchability offered by a printed device reported to date. Extensive electrochemical characterization of the printed device reveal that repeated stretching, torsional twisting, and indenting stress has negligible impact on its electrochemical properties. The wide-range applicability of this platform to realize highly stretchable CNT-based electrochemical sensors and biofuel cells has been demonstrated by fabricating and characterizing potentiometric ammonium sensor, amperometric enzyme-based glucose sensor, enzymatic glucose biofuel cell, and self-powered biosensor. Highly stretchable printable multianalyte sensor, multifuel biofuel cell, or any combination thereof can thus be realized using the printed CNT array. Such combination of intrinsically stretchable printed nanomaterial-based electrodes and strain-enduring design patterns holds considerable promise for creating an attractive class of inexpensive multifunctional, highly stretchable printed devices that satisfy the requirements of diverse healthcare and energy fields wherein resilience toward extreme mechanical deformations is mandatory.

  19. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  20. Device and Circuit Codesign Strategy for Application to Low-Noise Amplifier Based on Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Seongjae Cho,; Hee-Sauk Jhon,; Jung Hoon Lee,; Se Hwan Park,; Hyungcheol Shin,; Byung-Gook Park,

    2010-04-01

    In this study, a full-range approach from device level to circuit level design is performed for RF application of silicon nanowire (SNW) metal-oxide-semiconductor field effect transistors (MOSFETs). Both DC and AC analyses have been conducted to confirm the advantages of an SNW MOSFET over the conventional planar (CPL) MOSFET device having dimensional equivalence. Besides the intrinsic characteristic parameters, the extrinsic resistance and capacitance caused by wiring components are extracted from each device. On the basis of these intrinsic and extrinsic parameters, a multi-fingered 5.8 GHz low-noise amplifier (LNA) design adopting SNW MOSFETs has been achieved, which shows an improved gain of 17.5 dB and a noise figure of 3.1 dB over a CPL MOSFET LNA.

  1. Integrated Semiconductor Optical Sensors for Chronic, Minimally-Invasive Imaging of Brain Function

    PubMed Central

    Lee, Thomas T.; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P.; Smith, Stephen J; Shenoy, Krishna V.; Harris, James S.

    2008-01-01

    Intrinsic Optical Signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull. PMID:17946016

  2. Third generation photovoltaics based on multiple exciton generation in quantum confined semiconductors.

    PubMed

    Beard, Matthew C; Luther, Joseph M; Semonin, Octavi E; Nozik, Arthur J

    2013-06-18

    Improving the primary photoconversion process in a photovoltaiccell by utilizing the excess energy that is otherwise lost as heat can lead to an increase in the overall power conversion efficiency (PCE). Semiconductor nanocrystals (NCs) with at least one dimension small enough to produce quantum confinement effects provide new ways of controlling energy flow not achievable in thin film or bulk semiconductors. Researchers have developed various strategies to incorporate these novel structures into suitable solar conversion systems. Some of these methods could increase the PCE past the Shockley-Queisser (SQ) limit of ∼33%, making them viable "third generation photovoltaic" (TGPV) cell architectures. Surpassing the SQ limit for single junction solar cells presents both a scientific and a technological challenge, and the use of semiconductor NCs to enhance the primary photoconversion process offers a promising potential solution. The NCs are synthesized via solution phase chemical reactions producing stable colloidal solutions, where the reaction conditions can be modified to produce a variety of shapes, compositions, and structures. The confinement of the semiconductor NC in one dimension produces quantum films, wells, or discs. Two-dimensional confinement leads to quantum wires or rods (QRs), and quantum dots (QDs) are three-dimensionally confined NCs. The process of multiple exciton generation (MEG) converts a high-energy photon into multiple electron-hole pairs. Although many studies have demonstrated that MEG is enhanced in QDs compared with bulk semiconductors, these studies have either used ultrafast spectroscopy to measure the photon-to-exciton quantum yields (QYs) or theoretical calculations. Implementing MEG in a working solar cell has been an ongoing challenge. In this Account, we discuss the status of MEG research and strategies towards implementing MEG in working solar cells. Recently we showed an external quantum efficiency for photocurrent of greater

  3. Application of semiconductor optical amplifier for mobile radio communications networks based on radio-over-fiber systems

    NASA Astrophysics Data System (ADS)

    Andreev, Vladimir A.; Burdin, Vladimir A.; Volkov, Kirill A.; Dashkov, Michael V.; Bukashkin, Sergei A.; Buzov, Alexander L.; Procopiev, Vladimir I.; Zharkov, Alexander D.

    2016-03-01

    The analysis of semiconductor optical amplifier applications in Radio-over-Fiber systems of telecommunication networks is given. In such systems semiconductor optical amplifier can be used for either amplification, modulation or detection, and also as an universal device.

  4. Sol-gel derived precursors to Group 14 semiconductor nanocrystals - Convenient materials for enabling nanocrystal-based applications

    NASA Astrophysics Data System (ADS)

    Veinot, Jonathan G. C.; Henderson, Eric J.; Hessel, Colin M.

    2009-11-01

    Semiconductor nanocrystals are intriguing because of their electronic, optical, and chemical characteristics. Silicon nanocrystals (Si-NCs) of sub-5 nm dimension are of particular interest due to their intense photoluminescent response and the promise of linking silicon photonics and electronics. Other related nanomaterials of technological importance include SiC and Ge. The following contribution describes key experimental findings pertaining to synthetic methodology, investigation of nanodomain formation and growth, as determined by X-ray powder diffraction (XRD) and photoluminescence (PL) spectroscopy for a series of sol-gel derived prepolymers suitable for preparing Group 14 based nanocrystal containing composites.

  5. Optimisation of 40 Gb/s wavelength converters based on four-wave mixing in a semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Schulze, K.; Petersen, M. N.; Herrera, J.; Ramos, F.; Marti, J.

    2007-08-01

    The optimum operating powers and wavelengths for a 40 Gb/s wavelength converter based on four-wave mixing in a semiconductor optical amplifier are inferred from experimental results. From these measurements, some general rules of thumb are derived for this kind of devices. Generally, the optimum signal power should be 10 dB lower than the pump power (-16 dB conversion efficiency) whereas the wavelength separation between the signal and the pump carrier should not be lower than about four times the signal bitrate (1.3 nm for 40 Gb/s RZ signals).

  6. Effect of Electron-Beam Irradiation on Organic Semiconductor and Its Application for Transistor-Based Dosimeters.

    PubMed

    Kim, Jae Joon; Ha, Jun Mok; Lee, Hyeok Moo; Raza, Hamid Saeed; Park, Ji Won; Cho, Sung Oh

    2016-08-03

    The effects of electron-beam irradiation on the organic semiconductor rubrene and its application as a dosimeter was investigated. Through the measurements of photoluminescence and the ultraviolet photoelectron spectroscopy, we found that electron-beam irradiation induces n-doping of rubrene. Additionally, we fabricated rubrene thin-film transistors with pristine and irradiated rubrene, and discovered that the decrease in transistor properties originated from the irradiation of rubrene and that the threshold voltages are shifted to the opposite directions as the irradiated layers. Finally, a highly sensitive and air-stable electron dosimeter was fabricated based on a rubrene transistor.

  7. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; hide

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  8. First-principle study on some new spin-gapless semiconductors: The Zr-based quaternary Heusler alloys

    NASA Astrophysics Data System (ADS)

    Gao, Qiang; Xie, Huan-Huan; Li, Lei; Lei, Gang; Deng, Jian-Bo; Hu, Xian-Ru

    2015-09-01

    Employing first-principle calculations, we have investigated electronic and magnetic properties of the Zr-based quaternary Heusler alloys: ZrCoVIn, ZrFeVGe, ZrCoFeP, ZrCoCrBe and ZrFeCrZ (Z = In and Ga). Our calculation results show that all the alloys are (or nearly) spin-gapless semiconductors. The Slater-Pauling behaviours of these alloys are discussed as well. The cohesion energy and formation energy of these alloys have also been discussed, and the results indicate the studied alloys are stable.

  9. An upstream reach-extender for 10Gb/s PON applications based on an optimized semiconductor amplifier cascade.

    PubMed

    Porto, Stefano; Antony, Cleitus; Ossieur, Peter; Townsend, Paul D

    2012-01-02

    We present a reach-extender for the upstream transmission path of 10Gb/s passive optical networks based on an optimised cascade of two semiconductor optical amplifiers (SOAs). Through careful optimisation of the bias current of the second stage SOA, over 19dB input dynamic range and up to 12dB compression of the output dynamic range were achieved without any dynamic control. A reach of 70km and split up to 32 were demonstrated experimentally using an ac-coupled, continuous-mode receiver with a reduced 56ns ac-coupling constant.

  10. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; Wang, J. C.

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  11. A temperature sensor based on switchable dual-wavelength fiber Bragg grating laser with a semiconductor saturable absorber mirror

    NASA Astrophysics Data System (ADS)

    Li, Qi; Huang, Kai-qiang; Chen, Hai-yan

    2015-11-01

    A temperature sensor based on a switchable dual-wavelength fiber Bragg grating (FBG) laser with a semiconductor saturable absorber mirror (SESAM) is presented and demonstrated experimentally. The repetition rate of Q-switched pulses is ~17 kHz. The results demonstrate that the measured temperature has good linearity to the wavelength spacing of the two lasing wavelengths and has a temperature sensitivity of 21 pm/ºC covering a range of -10—22 °C. The experimental results prove the feasibility of the proposed temperature sensor.

  12. SIMULATION OF INTRINSIC BIOREMEDIATION PROCESSES AT WURTSMITH AIR FORCE BASE, MICHIGAN

    EPA Science Inventory

    In October, 1988, a KC-135 aircraft crashed at Wurtsmith Air Force base (AFB), Oscoda, Michigan during an attempted landing. Approximately 3000 gallons of jet fuel (JP-4) were spilled onto the ground, with a large portion of the fuel entering the subsurface. Previous investigat...

  13. SIMULATION OF INTRINSIC BIOREMEDIATION PROCESSES AT WURTSMITH AIR FORCE BASE, MICHIGAN

    EPA Science Inventory

    In October, 1988, a KC-135 aircraft crashed at Wurtsmith Air Force base (AFB), Oscoda, Michigan during an attempted landing. Approximately 3000 gallons of jet fuel (JP-4) were spilled onto the ground, with a large portion of the fuel entering the subsurface. Previous investigat...

  14. Intrinsic Functional Connectivity of Amygdala-Based Networks in Adolescent Generalized Anxiety Disorder

    ERIC Educational Resources Information Center

    Roy, Amy K.; Fudge, Julie L.; Kelly, Clare; Perry, Justin S. A.; Daniele, Teresa; Carlisi, Christina; Benson, Brenda; Castellanos, F. Xavier; Milham, Michael P.; Pine, Daniel S.; Ernst, Monique

    2013-01-01

    Objective: Generalized anxiety disorder (GAD) typically begins during adolescence and can persist into adulthood. The pathophysiological mechanisms underlying this disorder remain unclear. Recent evidence from resting state functional magnetic resonance imaging (R-fMRI) studies in adults suggests disruptions in amygdala-based circuitry; the…

  15. Intrinsic Functional Connectivity of Amygdala-Based Networks in Adolescent Generalized Anxiety Disorder

    ERIC Educational Resources Information Center

    Roy, Amy K.; Fudge, Julie L.; Kelly, Clare; Perry, Justin S. A.; Daniele, Teresa; Carlisi, Christina; Benson, Brenda; Castellanos, F. Xavier; Milham, Michael P.; Pine, Daniel S.; Ernst, Monique

    2013-01-01

    Objective: Generalized anxiety disorder (GAD) typically begins during adolescence and can persist into adulthood. The pathophysiological mechanisms underlying this disorder remain unclear. Recent evidence from resting state functional magnetic resonance imaging (R-fMRI) studies in adults suggests disruptions in amygdala-based circuitry; the…

  16. Versatile Soft Grippers with Intrinsic Electroadhesion Based on Multifunctional Polymer Actuators.

    PubMed

    Shintake, Jun; Rosset, Samuel; Schubert, Bryan; Floreano, Dario; Shea, Herbert

    2016-01-13

    A highly versatile soft gripper that can handle an unprecedented range of object types is developed based on a new design of dielectric elastomer actuators employing an interdigitated electrode geometry, simultaneously maximizing both electroadhesion and electrostatic actuation while incorporating self-sensing. The multifunctionality of the actuator leads to a highly integrated, lightweight, fast, soft gripper with simplified structure and control.

  17. The Relational-Behavior Model: The Relationship between Intrinsic Motivational Instruction and Extrinsic Motivation in Psychologically Based Instruction

    ERIC Educational Resources Information Center

    Chandler, Donald S., Jr.

    2008-01-01

    This pilot study examined the relational-behavior model (RBM) as a method of intrinsic motivational instruction in psychology courses. Among a sample of 33 college students enrolled in two undergraduate psychology courses, a Spearman rho analysis revealed a significant relationship between the intrinsic motivational factors (e.g. student/class…

  18. Thin film solar cell including a spatially modulated intrinsic layer

    DOEpatents

    Guha, Subhendu; Yang, Chi-Chung; Ovshinsky, Stanford R.

    1989-03-28

    One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

  19. Fundamental Understanding of the Intrinsic Ductility in Nickel-Base L1 sub 2 Type Alloys

    DTIC Science & Technology

    1988-06-30

    tantalum and niobium modified ternary alloys as published in the literature (References 9 and 16), in both cases here the > orientation is observed to be...applied to a nickel-base Llz phase compound. Large single crystals of binary and tantalum -modified V. Ni3Al alloys with various stoichiometry were...ductility of the tantalum -modified ternary alloys shows a rather different 0. OISTRIBUTION/AVAILABILITY OF ABSTRACT 21 ABSTRACT SECURITY CLASSIFICATION

  20. B-DNA structure is intrinsically polymorphic: even at the level of base pair positions

    SciTech Connect

    Maehigashi, Tatsuya; Hsiao, Chiaolong; Woods, Kristen Kruger; Moulaei, Tinoush; Hud, Nicholas V.; Williams, Loren Dean

    2012-10-23

    Increasingly exact measurement of single crystal X-ray diffraction data offers detailed characterization of DNA conformation, hydration and electrostatics. However, instead of providing a more clear and unambiguous image of DNA, highly accurate diffraction data reveal polymorphism of the DNA atomic positions and conformation and hydration. Here we describe an accurate X-ray structure of B-DNA, painstakingly fit to a multistate model that contains multiple competing positions of most of the backbone and of entire base pairs. Two of ten base-pairs of CCAGGCCTGG are in multiple states distinguished primarily by differences in slide. Similarly, all the surrounding ions are seen to fractionally occupy discrete competing and overlapping sites. And finally, the vast majority of water molecules show strong evidence of multiple competing sites. Conventional resolution appears to give a false sense of homogeneity in conformation and interactions of DNA. In addition, conventional resolution yields an average structure that is not accurate, in that it is different from any of the multiple discrete structures observed at high resolution. Because base pair positional heterogeneity has not always been incorporated into model-building, even some high and ultrahigh-resolution structures of DNA do not indicate the full extent of conformational polymorphism.

  1. Electrodes for Semiconductor Gas Sensors

    PubMed Central

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  2. Electrodes for Semiconductor Gas Sensors.

    PubMed

    Lee, Sung Pil

    2017-03-25

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode-semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode-semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect.

  3. Intrinsic Motivation and Engagement as "Active Ingredients" in Garden-Based Education: Examining Models and Measures Derived from Self-Determination Theory

    ERIC Educational Resources Information Center

    Skinner, Ellen A.; Chi, Una

    2012-01-01

    Building on self-determination theory, this study presents a model of intrinsic motivation and engagement as "active ingredients" in garden-based education. The model was used to create reliable and valid measures of key constructs, and to guide the empirical exploration of motivational processes in garden-based learning. Teacher- and…

  4. Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Feng; Fowler, Burt; Zhou, Fei; Chen, Ying-Chen; Lee, Jack C.

    2016-01-01

    Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiOx)-based resistive switching (RS) memory using TiW/SiOx/TiW device structures. The program window (difference between SET voltage and RESET voltage) is dependent on external series resistance, demonstrating that the SET process is due to a voltage-triggered mechanism. The program window has been optimized for program/erase disturbance immunity and reliability for circuit-level applications. The SET and RESET transitions have also been characterized using a dynamic conductivity method, which distinguishes the self-compliance behavior due to an internal series resistance effect (filament) in SiOx-based RS memory. By using a conceptual "filament/resistive gap (GAP)" model of the conductive filament and a proton exchange model with appropriate assumptions, the internal filament resistance and GAP resistance can be estimated for high- and low-resistance states (HRS and LRS), and are found to be independent of external series resistance. Our experimental results not only provide insights into potential reliability issues but also help to clarify the switching mechanisms and device operating characteristics of SiOx-based RS memory.

  5. A Carbonaceous Membrane based on a Polymer of Intrinsic Microporosity (PIM-1) for Water Treatment

    PubMed Central

    Kim, Hee Joong; Kim, Dong-Gyun; Lee, Kyuchul; Baek, Youngbin; Yoo, Youngjae; Kim, Yong Seok; Kim, Byoung Gak; Lee, Jong-Chan

    2016-01-01

    As insufficient access to clean water is expected to become worse in the near future, water purification is becoming increasingly important. Membrane filtration is the most promising technologies to produce clean water from contaminated water. Although there have been many studies to prepare highly water-permeable carbon-based membranes by utilizing frictionless water flow inside the carbonaceous pores, the carbon-based membranes still suffer from several issues, such as high cost and complicated fabrication as well as relatively low salt rejection. Here, we report for the first time the use of microporous carbonaceous membranes via controlled carbonization of polymer membranes with uniform microporosity for high-flux nanofiltration. Further enhancement of membrane performance is observed by O2 plasma treatment. The optimized membrane exhibits high water flux (13.30 LMH Bar−1) and good MgSO4 rejection (77.38%) as well as antifouling properties. This study provides insight into the design of microporous carbonaceous membranes for water purification. PMID:27782212

  6. A Carbonaceous Membrane based on a Polymer of Intrinsic Microporosity (PIM-1) for Water Treatment.

    PubMed

    Kim, Hee Joong; Kim, Dong-Gyun; Lee, Kyuchul; Baek, Youngbin; Yoo, Youngjae; Kim, Yong Seok; Kim, Byoung Gak; Lee, Jong-Chan

    2016-10-26

    As insufficient access to clean water is expected to become worse in the near future, water purification is becoming increasingly important. Membrane filtration is the most promising technologies to produce clean water from contaminated water. Although there have been many studies to prepare highly water-permeable carbon-based membranes by utilizing frictionless water flow inside the carbonaceous pores, the carbon-based membranes still suffer from several issues, such as high cost and complicated fabrication as well as relatively low salt rejection. Here, we report for the first time the use of microporous carbonaceous membranes via controlled carbonization of polymer membranes with uniform microporosity for high-flux nanofiltration. Further enhancement of membrane performance is observed by O2 plasma treatment. The optimized membrane exhibits high water flux (13.30 LMH Bar(-1)) and good MgSO4 rejection (77.38%) as well as antifouling properties. This study provides insight into the design of microporous carbonaceous membranes for water purification.

  7. A Carbonaceous Membrane based on a Polymer of Intrinsic Microporosity (PIM-1) for Water Treatment

    NASA Astrophysics Data System (ADS)

    Kim, Hee Joong; Kim, Dong-Gyun; Lee, Kyuchul; Baek, Youngbin; Yoo, Youngjae; Kim, Yong Seok; Kim, Byoung Gak; Lee, Jong-Chan

    2016-10-01

    As insufficient access to clean water is expected to become worse in the near future, water purification is becoming increasingly important. Membrane filtration is the most promising technologies to produce clean water from contaminated water. Although there have been many studies to prepare highly water-permeable carbon-based membranes by utilizing frictionless water flow inside the carbonaceous pores, the carbon-based membranes still suffer from several issues, such as high cost and complicated fabrication as well as relatively low salt rejection. Here, we report for the first time the use of microporous carbonaceous membranes via controlled carbonization of polymer membranes with uniform microporosity for high-flux nanofiltration. Further enhancement of membrane performance is observed by O2 plasma treatment. The optimized membrane exhibits high water flux (13.30 LMH Bar‑1) and good MgSO4 rejection (77.38%) as well as antifouling properties. This study provides insight into the design of microporous carbonaceous membranes for water purification.

  8. Variability in the Intrinsic UV Absorption in Mrk 279 based on HST/COS Spectra

    NASA Astrophysics Data System (ADS)

    Schmachtenberger, Benjamin R.; Gabel, Jack; Crenshaw, D. Michael; Kraemer, Steven B.

    2015-01-01

    We present an analysis of the variability of the mass outflow systems in the Seyfert 1 galaxy Mrk 279 based on spectra obtained with the Cosmic Origin Spectrograph (COS) aboard the Hubble Space Telescope in 2011, compared with observations in 2002 and 2003 obtained with the Space Telescope Imaging Spectrograph (STIS). The continuum flux dropped by a factor of fifteen in 2011 compared to 2003, similar to the low flux level observed in 2002. We measure covering factors and ionic column densities for the outflow systems, treating three distinct emission components - continuum, broad line region (BLR) and intermediate line region (ILR). We find that the column densities of C IV and N V have increased in both the low and high velocity kinematic components (radial velocities -265 km/s and -460 km/s), and Si IV has appeared in the former. Based on photoionization models using CLOUDY, we find the column density variations in both components are consistent with a response of the outflow to the drop in ionizing flux. We also find that the covering factor of the ILR in the low velocity component has increased in the 2011 spectrum, while the covering factors in the high velocity component are stable across the three epochs. We use these results to constrain the geometry and physical conditions of the outflows in Mrk 279.

  9. Intrinsic fiber optical gas sensor based on surface plasmon resonance spectroscopy

    NASA Astrophysics Data System (ADS)

    Niggemann, Matthias; Katerkamp, Andreas; Pellmann, Maria; Bolsmann, Peter; Reinbold, Joerg; Cammann, Karl

    1995-09-01

    A miniaturized fiber optical sensor based on surface plasmon resonance spectroscopy is investigated in view of the detection of organic solvent vapors, particularly tetrachloroethene. Surface plasmons are excited on a silver coated multimode fiber by polychromatic light, and the resonant excitation is detected as a resonant absorption band in the measured output spectrum. When the analyte is absorbed in a thin gas-sensitive polysiloxane film deposited on the silver layer the polymer film changes its thickness and its refractive index. These changes result in a wavelength shift of the resonant curve depending on the analyte gas concentration. Theoretical considerations about the sensing effect are made and resonance curves were computer-simulated. Based on this simulation the layout of all sensor parameters was optimized. The sensor shows an excellent response to tetrachloroethene with a response time of two seconds and high reporducibility. Using self-assembling monolayers on the silver surface a long-term stability of more than three months is obtained. The sensor shows low cross sensitivities less than 1% to other solvent vapors like aceton and ethanol, furthermore, the influence of humidity is very low. This miniaturized fiber optical sensor in combination with an easy-to-handle and non-sophisticated measuring and evaluation unit is excellently suitable for the remote sensing of special organic solvent vapors.

  10. Critical evaluation of dipolar, acid-base and charge interactions II. Charge exchange within electrolytes and electron exchange with semiconductors.

    PubMed

    Rosenholm, Jarl B

    2017-09-01

    Electron displacements may be considered as a general measure of semiconductor activity as well as of dipolar, acid-base and charge interactions. Electron transfers during reduction and oxidation reactions between dissolved cations and anions correspond to an extreme Lewis acid-base electron displacement. Brϕnsted proton release (protolysis) represents an extremely weakened hydrogen bond. The most common electrostatic (Born, PCM) and chemical (pKa matching) models for electron and proton exchange between dissolved species are reviewed using aluminium species as examples. Dissolution of ions from solids (salts) may be considered as a reversed precipitation reaction. For partly covalent solids dissociation is dependent on electron or vacancy (hole) transfers to the solid which connects oxidation and reduction reactions to electron displacements in semiconductors. The electron exchange is characterized by Femi energy of semiconductors and of electrolytes. The standard reduction potential may thus be converted to Fermi energy of connected electrochemical cells. In disconnected particle suspensions (sols) the electron activity is a more appropriate parameter which may be converted both to standard reduction potential of ions and to Fermi energy of semiconductors. Dissolution of potential determining cations and anions and hydrolysis of surface sites determines the charging (electron transfer to/from surface) of solids. Both electrostatic (MUSIC) and chemical equilibrium constant models are available for Brϕnsted equilibrium of surface hydroxyls. Point of zero charge is a result of positive and negative charge matching and it represents the optimal condition for condensation of polynuclear species by olation and oxolation. The capability of partial charge (PCM) model to predict condensation is evaluated. Acidity (pH), composition and temperature dependence of aluminium species is illustrated by solubility limits of contributing species and by phase diagrams. Influence

  11. Influence of Deuterium Treatments on the Polysilicon-Based Metal-Semiconductor-Metal Photodetector.

    PubMed

    Lee, Jae-Sung

    2016-06-01

    The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodetector structure, depending on deuterium treatment, is analyzed by means of the dark current and the photocurrent measurements. Al/Ti bilayer was used as Schottky metal. The deuterium incorporation into the absorption layer, undoped polysilicon, was achieved with annealing process and with ion implantation process, respectively. In the photocurrent-to-dark current ratio measurement, deuterium-ion-implanted photodetector shows over hundred higher than the control device. It means that the heightening of the Schottky barrier and the passivation of grain boundary trap were achieved effectively through the deuterium ion implantation process.

  12. Excitability in optically injected semiconductor lasers: Contrasting quantum- well- and quantum-dot-based devices

    NASA Astrophysics Data System (ADS)

    Kelleher, B.; Bonatto, C.; Huyet, G.; Hegarty, S. P.

    2011-02-01

    Excitability is a generic prediction for an optically injected semiconductor laser. However, the details of the phenomenon differ depending on the type of device in question. For quantum-well lasers very complicated multipulse trajectories can be found, while for quantum-dot lasers the situation is much simpler. Experimental observations show the marked differences in the pulse shapes while theoretical considerations reveal the underlying mechanism responsible for the contrast, identifying the increased stability of quantum-dot lasers to perturbations as the root.

  13. Optical clock division based on dual-wavelength mode-locked semiconductor fiber ring laser.

    PubMed

    Zhang, Weiwei; Sun, Junqiang; Wang, Jian; Zhang, Xingliang; Huang, Dexiu

    2008-07-21

    We have reported the optical clock division utilizing an injected mode-locked fiber ring laser incorporating semiconductor optical amplifiers (SOAs) and a dispersion compensation fiber (DCF). The clock division is mainly caused by the modulation competition between two wavelength components while both of them satisfy the harmonic mode-locking condition at the newly generated frequency. Stable second, third, and fourth clock divisions are obtained by properly adjusting the polarization controllers inside the ring cavity when a 10-GHz clock signal without any sub-harmonic frequency component is injected into the cavity. The radio-frequency spectra show good qualities of the obtained clock division trains.

  14. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    SciTech Connect

    Kim, Junghwan Miyokawa, Norihiko; Ide, Keisuke; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  15. Widely tunable lasers based on mode-hop-free semiconductor laser array

    NASA Astrophysics Data System (ADS)

    Kurobe, T.; Kimoto, T.; Muranushi, K.; Mukaihara, T.; Ariga, M.; Kagimoto, T.; Kagi, N.; Matsuo, N.; Kasukawa, A.

    2007-11-01

    Integration of mode-hop-free tunable laser array and a semiconductor optical amplifier is most reliable approach to realize widely tunable lasers. We have developed two types of tunable lasers, one is a thermally tunable DFB laser array for DWDM tunable transponders, which has shown high power and wide tunability covering Cband or L-band, housing in compact butterfly packages with robust wavelength locker. Another is a short-cavity DBR laser array for optical burst switching, whose lasing frequency can be monotonously tuned and locked on the ITU grid within 5 microseconds. Both lasers have demonstrated superior performances in system experiments.

  16. Excitability in optically injected semiconductor lasers: contrasting quantum-well- and quantum-dot-based devices.

    PubMed

    Kelleher, B; Bonatto, C; Huyet, G; Hegarty, S P

    2011-02-01

    Excitability is a generic prediction for an optically injected semiconductor laser. However, the details of the phenomenon differ depending on the type of device in question. For quantum-well lasers very complicated multipulse trajectories can be found, while for quantum-dot lasers the situation is much simpler. Experimental observations show the marked differences in the pulse shapes while theoretical considerations reveal the underlying mechanism responsible for the contrast, identifying the increased stability of quantum-dot lasers to perturbations as the root.

  17. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  18. Synthesis and characterization of soybean-based hydrogels with an intrinsic activity on cell differentiation.

    PubMed

    Meikle, Steven T; Standen, Guy; Salvage, Jonathan; De Santis, Roberto; Nicolais, Luigi; Ambrosio, Luigi; Santin, Matteo

    2012-09-01

    The successful regeneration of large defects in traumatized and diseased tissues depends on the availability of biodegradable and bioactive biomaterials able to guide the tissue during its repair by offering both a physical support and a control of its biological mechanisms. Recently, a novel class of natural, biodegradable biomaterials has been obtained by the thermosetting of defatted soy curd. These biomaterials have been shown to regulate the activity of both tissue and inflammatory cells. Here, soybean-based hydrogels with different physicochemical properties and bioactivity have been obtained with a relatively simple and highly reproducible processing method. The content of the different soy components (e.g., the isoflavones) was tuned varying the solvent system during the extraction procedure, while variations in the material crosslinking provided either loose hydrogels or a bioglue. The biomaterials obtained can be used as either bioadhesives or injectable formulations in regenerative medicine as they were shown to stimulate the synthesis of collagen by fibroblasts and the formation of mineralized bone noduli by osteoblasts.

  19. Polarization sensitive optical coherence tomography of melanin provides intrinsic contrast based on depolarization

    PubMed Central

    Baumann, Bernhard; Baumann, Stefan O.; Konegger, Thomas; Pircher, Michael; Götzinger, Erich; Schlanitz, Ferdinand; Schütze, Christopher; Sattmann, Harald; Litschauer, Marco; Schmidt-Erfurth, Ursula; Hitzenberger, Christoph K.

    2012-01-01

    Polarization sensitive optical coherence tomography (PS-OCT) is a functional extension of OCT. In addition to imaging based on tissue reflectivity, PS-OCT also enables depth-resolved mapping of sample polarization properties such as phase-retardation, birefringent axis orientation, Stokes vectors, and degree of polarization uniformity (DOPU). In this study, PS-OCT was used to investigate the polarization properties of melanin. In-vitro measurements in samples with varying melanin concentrations revealed polarization scrambling, i.e. depolarization of backscattered light. Polarization scrambling in the PS-OCT images was more pronounced for higher melanin concentrations and correlated with the concentration of the melanin granules in the phantoms. Moreover, in-vivo PS-OCT was performed in the retinas of normal subjects and individuals with albinism. Unlike in the normal eye, polarization scrambling in the retinal pigment epithelium (RPE) was less pronounced or even not observable in PS-OCT images of albinos. These results indicate that the depolarizing appearance of pigmented structures like, for instance, the RPE is likely to be caused by the melanin granules contained in these cells. PMID:22808437

  20. 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

    NASA Astrophysics Data System (ADS)

    Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

    2017-02-01

    Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

  1. Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors

    SciTech Connect

    Lao, Y. F.; Perera, A. G. U.; Wang, H. L.; Zhao, J. H.; Jin, Y. J.; Zhang, D. H.

    2016-03-14

    Free-carrier effects in a p-type semiconductor including the intra-valence-band and inter-valence-band optical transitions are primarily responsible for its optical characteristics in infrared. Attention has been paid to the inter-valence-band transitions for the development of internal photoemission (IPE) mid-wave infrared (MWIR) photodetectors. The hole transition from the heavy-hole (HH) band to the spin-orbit split-off (SO) band has demonstrated potential applications for 3–5 μm detection without the need of cooling. However, the forbidden SO-HH transition at the Γ point (corresponding to a transition energy Δ{sub 0}, which is the split-off gap between the HH and SO bands) creates a sharp drop around 3.6 μm in the spectral response of p-type GaAs/AlGaAs detectors. Here, we report a study on the optical characteristics of p-type GaAs-based semiconductors, including compressively strained InGaAs and GaAsSb, and a dilute magnetic semiconductor, GaMnAs. A model-independent fitting algorithm was used to derive the dielectric function from experimental reflection and transmission spectra. Results show that distinct absorption dip at Δ{sub 0} is observable in p-type InGaAs and GaAsSb, while GaMnAs displays enhanced absorption without degradation around Δ{sub 0}. This implies the promise of using GaMnAs to develop MWIR IPE detectors. Discussions on the optical characteristics correlating with the valence-band structure and free-hole effects are presented.

  2. All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics.

    PubMed

    Bae, Yoon Cheol; Lee, Ah Rahm; Baek, Gwang Ho; Chung, Je Bock; Kim, Tae Yoon; Park, Jea Gun; Hong, Jin Pyo

    2015-08-20

    Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes.

  3. All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

    NASA Astrophysics Data System (ADS)

    Bae, Yoon Cheol; Lee, Ah Rahm; Baek, Gwang Ho; Chung, Je Bock; Kim, Tae Yoon; Park, Jea Gun; Hong, Jin Pyo

    2015-08-01

    Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes.

  4. All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

    PubMed Central

    Bae, Yoon Cheol; Lee, Ah Rahm; Baek, Gwang Ho; Chung, Je Bock; Kim, Tae Yoon; Park, Jea Gun; Hong, Jin Pyo

    2015-01-01

    Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes. PMID:26289565

  5. Diagnosis of cervical cells based on fractal and Euclidian geometrical measurements: Intrinsic Geometric Cellular Organization

    PubMed Central

    2014-01-01

    Background Fractal geometry has been the basis for the development of a diagnosis of preneoplastic and neoplastic cells that clears up the undetermination of the atypical squamous cells of undetermined significance (ASCUS). Methods Pictures of 40 cervix cytology samples diagnosed with conventional parameters were taken. A blind study was developed in which the clinic diagnosis of 10 normal cells, 10 ASCUS, 10 L-SIL and 10 H-SIL was masked. Cellular nucleus and cytoplasm were evaluated in the generalized Box-Counting space, calculating the fractal dimension and number of spaces occupied by the frontier of each object. Further, number of pixels occupied by surface of each object was calculated. Later, the mathematical features of the measures were studied to establish differences or equalities useful for diagnostic application. Finally, the sensibility, specificity, negative likelihood ratio and diagnostic concordance with Kappa coefficient were calculated. Results Simultaneous measures of the nuclear surface and the subtraction between the boundaries of cytoplasm and nucleus, lead to differentiate normality, L-SIL and H-SIL. Normality shows values less than or equal to 735 in nucleus surface and values greater or equal to 161 in cytoplasm-nucleus subtraction. L-SIL cells exhibit a nucleus surface with values greater than or equal to 972 and a subtraction between nucleus-cytoplasm higher to 130. L-SIL cells show cytoplasm-nucleus values less than 120. The rank between 120–130 in cytoplasm-nucleus subtraction corresponds to evolution between L-SIL and H-SIL. Sensibility and specificity values were 100%, the negative likelihood ratio was zero and Kappa coefficient was equal to 1. Conclusions A new diagnostic methodology of clinic applicability was developed based on fractal and euclidean geometry, which is useful for evaluation of cervix cytology. PMID:24742118

  6. A Fragment-Based Method of Creating Small-Molecule Libraries to Target the Aggregation of Intrinsically Disordered Proteins.

    PubMed

    Joshi, Priyanka; Chia, Sean; Habchi, Johnny; Knowles, Tuomas P J; Dobson, Christopher M; Vendruscolo, Michele

    2016-03-14

    The aggregation process of intrinsically disordered proteins (IDPs) has been associated with a wide range of neurodegenerative disorders, including Alzheimer's and Parkinson's diseases. Currently, however, no drug in clinical use targets IDP aggregation. To facilitate drug discovery programs in this important and challenging area, we describe a fragment-based approach of generating small-molecule libraries that target specific IDPs. The method is based on the use of molecular fragments extracted from compounds reported in the literature to inhibit of the aggregation of IDPs. These fragments are used to screen existing large generic libraries of small molecules to form smaller libraries specific for given IDPs. We illustrate this approach by describing three distinct small-molecule libraries to target, Aβ, tau, and α-synuclein, which are three IDPs implicated in Alzheimer's and Parkinson's diseases. The strategy described here offers novel opportunities for the identification of effective molecular scaffolds for drug discovery for neurodegenerative disorders and to provide insights into the mechanism of small-molecule binding to IDPs.

  7. Study of Fused Thiophene Based Organic Semiconductors and Interfacial Self-Assembled Monolayer (SAM) for Thin-Film Transistor (TFT) Application

    NASA Astrophysics Data System (ADS)

    Youn, Jangdae

    , the role of a thiol SAM on top of the gold electrode is investigated in terms of semiconductor film structure and OTFT performance in the bottom-contact/ bottom-gate TFT structure by using one of the most successful small molecule based n-type organic semiconductors, α,ω-diperfluorohexylquarterthiophene (DFH-4T) and N,N' bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarb-oximide) (PDI-8CN2). The study of semiconductor film morphogy shows that the semiconductor molecules at the gold/SAM/semiconductor interface are aligned normal to the substrate, facilitating charge transport at the interfacial region. As a result, contact resistance was minimized, and the OTFT device performance was improved. When it comes to semiconductor-dielectric interface, it is important because the charge transport layer of the OTFTs is formed within several monolayers of semiconductor films right above the gate dielectric. The physical and chemical nature of the dielectric surface significantly influences charge flow. For example, the surface of a SiO2 dielectric contains a large number of SiOH functional groups in air. After depositing semiconductor material on top of the SiO2 surface, those SiOH functional groups play a role of charge traps. One of the most effective ways of circumventing this problem is to introduce organic self-assembled monolayers (SAMs) on the SiO 2 dielectric surface. The SAMs in the semiconductor-dielectric interface not only minimize the charge traps but also improve the crystallinity of top semiconductor layers. Furthermore, the improvement of the semiconductor film microstructure depends on the structure of the SAM. When the SAM is disorganized, the size and density of crystalline domains in the semiconductor film decline. Meanwhile, the domain size and population density of crystalline domains expand when the SAM is tightly packed and vertically aligned. In this thesis, a humidity control method of fabricating high quality octadecyltrichlorosilane (OTS) SAM on SiO2

  8. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  9. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, Rommel; Chen, Yih-Wen

    1987-01-01

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  10. Highly Stretchable Fully-Printed CNT-based Electrochemical Sensors and Biofuel Cells: Combining Intrinsic and Design-induced Stretchability

    PubMed Central

    Bandodkar, Amay J.; Jeerapan, Itthipon; You, Jung-Min; Nuñez-Flores, Rogelio; Wang, Joseph

    2015-01-01

    We present the first example of an all-printed, inexpensive, highly stretchable CNT-based electrochemical sensor and biofuel cell array. The synergistic effect of utilizing specially tailored screen printable stretchable inks that combine the attractive electrical and mechanical properties of CNTs with the elastomeric properties of polyurethane as a binder along with a judiciously designed free-standing serpentine pattern enables the printed device to possess two degrees of stretchability. Owing to these synergistic design and nanomaterial-based ink effects, the device withstands extremely large levels of strains (upto 500% strain) with negligible effect on its structural integrity and performance. This represents the highest stretchability offered by a printed device reported to date. Extensive electrochemical characterization of the printed device reveal that repeated stretching, torsional twisting and indenting stress has negligible impact on its electrochemical properties. The wide-range applicability of this platform to realize highly stretchable CNT-based electrochemical sensors and biofuel cells has been demonstrated by fabricating and characterizing potentiometric ammonium sensor, amperometric enzyme-based glucose sensor, enzymatic glucose biofuel cell and self-powered biosensor. Highly stretchable printable multi-analyte sensor, multi-fuel biofuel cell or any combination thereof can thus be realized using the printed CNT array. Such combination of intrinsically-stretchable printed nanomaterial-based electrodes and strain-enduring design patterns holds considerable promise for creating an attractive class of inexpensive multi-functional, highly stretchable printed devices that satisfy the requirements of diverse healthcare and energy fields wherein resilience towards extreme mechanical deformations is mandatory. PMID:26694819

  11. Seeing diabetes: visual detection of glucose based on the intrinsic peroxidase-like activity of MoS2 nanosheets

    NASA Astrophysics Data System (ADS)

    Lin, Tianran; Zhong, Liangshuang; Guo, Liangqia; Fu, Fengfu; Chen, Guonan

    2014-09-01

    Molybdenum disulfide (MoS2) has attracted increasing research interest recently due to its unique physical, optical and electrical properties, correlated with its 2D ultrathin atomic-layered structure. Until now, however, great efforts have focused on its applications such as lithium ion batteries, transistors, and hydrogen evolution reactions. Herein, for the first time, MoS2 nanosheets are discovered to possess an intrinsic peroxidase-like activity and can catalytically oxidize 3,3',5,5'-tetramethylbenzidine (TMB) by H2O2 to produce a color reaction. The catalytic activity follows the typical Michaelis-Menten kinetics and is dependent on temperature, pH, H2O2 concentration, and reaction time. Based on this finding, a highly sensitive and selective colorimetric method for H2O2 and glucose detection is developed and applied to detect glucose in serum samples. Moreover, a simple, inexpensive, instrument-free and portable test kit for the visual detection of glucose in normal and diabetic serum samples is constructed by utilizing agarose hydrogel as a visual detection platform.Molybdenum disulfide (MoS2) has attracted increasing research interest recently due to its unique physical, optical and electrical properties, correlated with its 2D ultrathin atomic-layered structure. Until now, however, great efforts have focused on its applications such as lithium ion batteries, transistors, and hydrogen evolution reactions. Herein, for the first time, MoS2 nanosheets are discovered to possess an intrinsic peroxidase-like activity and can catalytically oxidize 3,3',5,5'-tetramethylbenzidine (TMB) by H2O2 to produce a color reaction. The catalytic activity follows the typical Michaelis-Menten kinetics and is dependent on temperature, pH, H2O2 concentration, and reaction time. Based on this finding, a highly sensitive and selective colorimetric method for H2O2 and glucose detection is developed and applied to detect glucose in serum samples. Moreover, a simple, inexpensive

  12. Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms

    PubMed Central

    Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Santos, Susana I.C.O; Artigas, David; Loza-Alvarez, Pablo

    2011-01-01

    We present a portable ultrafast Semiconductor Disk Laser (SDL) (or vertical extended cavity surface emitting laser—VECSELs), to be used for nonlinear microscopy. The SDL is modelocked using a quantum-dot semiconductor saturable absorber mirror (SESAM), delivering an average output power of 287 mW, with 1.5 ps pulses at 500 MHz and a central wavelength of 965 nm. Specifically, despite the fact of having long pulses and high repetition rates, we demonstrate the potential of this laser for Two-Photon Excited Fluorescence (TPEF) imaging of in vivo Caenorhabditis elegans (C. elegans) expressing Green Fluorescent Protein (GFP) in a set of neuronal processes and cell bodies. Efficient TPEF imaging is achieved due to the fact that this wavelength matches the peak of the two-photon action cross section of this widely used fluorescent marker. The SDL extended versatility is shown by presenting Second Harmonic Generation images of pharynx, uterus, body wall muscles and its potential to be used to excite other different commercial dyes. Importantly this non-expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices. PMID:21483599

  13. Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances

    PubMed Central

    Mangla, Onkar; Roy, Savita; Ostrikov, Kostya (Ken)

    2015-01-01

    The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III–V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III–V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well. PMID:28344261

  14. Optical waveguide beam splitters based on hybrid metal-dielectric-semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Li, Yunyun; Liang, Junwu; Zhang, Qinglin; Zhou, Zidong; Li, Honglai; Fan, Xiaopeng; Wang, Xiaoxia; Fan, Peng; Yang, Yankun; Guo, Pengfei; Zhuang, Xiujuan; Zhu, Xiaoli; Liao, Lei; Pan, Anlian

    2015-11-01

    Miniature integration is desirable for the future photonics circuit. Low-dimensional semiconductor and metal nanostructures is the potential building blocks in compact photonic circuits for their unique electronic and optical properties. In this work, a hybrid metal-dielectric-semiconductor nanostructure is designed and fabricated to realizing a nano-scale optical waveguide beam splitter, which is constructed with the sandwiched structure of a single CdS nanoribbon/HfO2 thin film/Au nanodisk arrays. Micro-optical investigations reveal that the guided light outputting at the terminal end of the CdS ribbon is well separated into several light spots. Numerical simulations further demonstrate that the beam splitting mechanism is attributed to the strong electromagnetic coupling between the Au nanodisks and light guided in the nanoribbon. The number of the split beams (light spots) at the terminal end of the nanoribbon is mainly determined by the number of the Au nanodisk rows, as well as the distance of the blank region between the nanodisks array and the end of the CdS ribbon, owing to the interference between the split beams. These optical beam splitters may find potential applications in high-density integrated photonic circuits and systems.

  15. Semiconductor-based mid-IR metamaterials: experimental and theoretical studies

    NASA Astrophysics Data System (ADS)

    Semichaevsky, Andrey; Harris, Christian; Wei, Dongxia; Law, Stephanie

    All-semiconductor (III-V) metamaterials (MTM) for the infrared (IR) can be applied to superlensing and optical cloaking. 1-D metallic-semiconductor superlattices can be designed to have hyperbolic dispersion due to the choice of their effective permittivity tensor components. In this paper we go beyond the effective-medium theories and provide a detailed analysis of how the choice of doping levels and layer thicknesses in the InAs - InAs:Si will affect the reflectance of the MTM superlattice in the IR. In order to do that, four metamaterial samples with various doping profiles were grown by MBE and characterized using FTIR. For the same samples we performed full-wave calculations of the wavelength- and angle-resolved reflectance. Our numerical model is suitable for 1-D inhomogeneous lossy dispersive media and is capable of accounting for an arbitrary doping profile and the quantum mechanical tunneling of electrons in the heterostructure. Experimental and theoretical results for the reflectance of IR metamaterial structures are compared.

  16. The Narrow-Band Model and Semi-Conductor Theory

    ERIC Educational Resources Information Center

    Tanner, B. K.

    1976-01-01

    Applies the narrow-band model to the instruction of intrinsic and extrinsic semiconductors along with the phenomenon of compensation. Advocates the model for undergraduate instruction due to its intuitive appeal and mathematical simplicity. (CP)

  17. The Narrow-Band Model and Semi-Conductor Theory

    ERIC Educational Resources Information Center

    Tanner, B. K.

    1976-01-01

    Applies the narrow-band model to the instruction of intrinsic and extrinsic semiconductors along with the phenomenon of compensation. Advocates the model for undergraduate instruction due to its intuitive appeal and mathematical simplicity. (CP)

  18. REVIEW ARTICLE: Harmonically mode-locked semiconductor-based lasers as high repetition rate ultralow noise pulse train and optical frequency comb sources

    NASA Astrophysics Data System (ADS)

    Quinlan, F.; Ozharar, S.; Gee, S.; Delfyett, P. J.

    2009-10-01

    Recent experimental work on semiconductor-based harmonically mode-locked lasers geared toward low noise applications is reviewed. Active, harmonic mode-locking of semiconductor-based lasers has proven to be an excellent way to generate 10 GHz repetition rate pulse trains with pulse-to-pulse timing jitter of only a few femtoseconds without requiring active feedback stabilization. This level of timing jitter is achieved in long fiberized ring cavities and relies upon such factors as low noise rf sources as mode-lockers, high optical power, intracavity dispersion management and intracavity phase modulation. When a high finesse etalon is placed within the optical cavity, semiconductor-based harmonically mode-locked lasers can be used as optical frequency comb sources with 10 GHz mode spacing. When active mode-locking is replaced with regenerative mode-locking, a completely self-contained comb source is created, referenced to the intracavity etalon.

  19. Predicting clinical symptoms of attention deficit hyperactivity disorder based on temporal patterns between and within intrinsic connectivity networks.

    PubMed

    Wang, Xun-Heng; Jiao, Yun; Li, Lihua

    2017-08-24

    Attention deficit hyperactivity disorder (ADHD) is a common brain disorder with high prevalence in school-age children. Previously developed machine learning-based methods have discriminated patients with ADHD from normal controls by providing label information of the disease for individuals. Inattention and impulsivity are the two most significant clinical symptoms of ADHD. However, predicting clinical symptoms (i.e., inattention and impulsivity) is a challenging task based on neuroimaging data. The goal of this study is twofold: to build predictive models for clinical symptoms of ADHD based on resting-state fMRI and to mine brain networks for predictive patterns of inattention and impulsivity. To achieve this goal, a cohort of 74 boys with ADHD and a cohort of 69 age-matched normal controls were recruited from the ADHD-200 Consortium. Both structural and resting-state fMRI images were obtained for each participant. Temporal patterns between and within intrinsic connectivity networks (ICNs) were applied as raw features in the predictive models. Specifically, sample entropy was taken asan intra-ICN feature, and phase synchronization (PS) was used asan inter-ICN feature. The predictive models were based on the least absolute shrinkage and selectionator operator (LASSO) algorithm. The performance of the predictive model for inattention is r=0.79 (p<10(-8)), and the performance of the predictive model for impulsivity is r=0.48 (p<10(-8)). The ICN-related predictive patterns may provide valuable information for investigating the brain network mechanisms of ADHD. In summary, the predictive models for clinical symptoms could be beneficial for personalizing ADHD medications. Copyright © 2017 IBRO. Published by Elsevier Ltd. All rights reserved.

  20. Creating semiconductor metafilms with designer absorption spectra

    PubMed Central

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2015-01-01

    The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate that near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells. PMID:26184335